Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

International Nuclear Information System (INIS)

Wang, L.M.; Guo, C.-C.

2005-01-01

The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

Role of the magnetic anisotropy in organic spin valves

Directory of Open Access Journals (Sweden)

V. Kalappattil

2017-09-01

Full Text Available Magnetic anisotropy plays an important role in determining the magnetic functionality of thin film based electronic devices. We present here, the first systematic study of the correlation between magnetoresistance (MR response in organic spin valves (OSVs and magnetic anisotropy of the bottom ferromagnetic electrode over a wide temperature range (10 K–350 K. The magnetic anisotropy of a La0.67Sr0.33MnO3 (LSMO film epitaxially grown on a SrTiO3 (STO substrate was manipulated by reducing film thickness from 200 nm to 20 nm. Substrate-induced compressive strain was shown to drastically increase the bulk in-plane magnetic anisotropy when the LSMO became thinner. In contrast, the MR response of LSMO/OSC/Co OSVs for many organic semiconductors (OSCs does not depend on either the in-plane magnetic anisotropy of the LSMO electrodes or their bulk magnetization. All the studied OSV devices show a similar temperature dependence of MR, indicating a similar temperature-dependent spinterface effect irrespective of LSMO thickness, resulting from the orbital hybridization of carriers at the OSC/LSMO interface.

Optimization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin film by pulsed laser deposition for spin injection

Energy Technology Data Exchange (ETDEWEB)

Jain, Sourabh, E-mail: sourabhjain@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Sharma, Himanshu [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Kumar Shukla, Amit [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Tomy, C.V. [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Palkar, V.R.; Tulapurkar, Ashwin [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2014-09-01

We have investigated low temperature magnetic properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) thin films on SrTiO{sub 3} (STO) substrate deposited by pulsed laser deposition (PLD). We observed a large change in the Curie temperature T{sub C} when the LSMO film thickness is reduced from 4 nm (T{sub C}∼280 K) to 2 nm (T{sub C} ∼100 K), which is a result of high strain present at the STO–LSMO interface. The presence of the strain is confirmed by a grazing angle X-ray diffraction (XRD) technique where a particular peak is shifted away from the bulk peak position as we decrease the thickness. In a LSMO/Pb[Zr{sub y}Ti{sub 1−y}]O{sub 3} (PZT)/LSMO magnetic tunnel junction (MTJ), these LSMO thin films can be used for spin injection into the tunnel barrier. Here spin current can be manipulated by changing the strain present at the LSMO–PZT interface by using piezoelectric properties of PZT.

Surface and grain boundary interdiffusion in nanometer-scale LSMO/BFO bilayer

Energy Technology Data Exchange (ETDEWEB)

Kumar, Virendra [Department of Physics, National Institute of Technology, Kurukshetra 136119 (India); Gaur, Anurag, E-mail: anuragdph@gmail.com [Department of Physics, National Institute of Technology, Kurukshetra 136119 (India); Choudhary, R.J.; Gupta, Mukul [UGC-DAE Consortium for Scientific Research, Indore 452 001 (India)

2016-05-01

Epitaxial 150 nm thick LSMO/BFO bilayer is deposited on STO (100) substrate by pulsed laser deposition, to study magnetoelectric effect. Unexpected low value of room temperature magnetization in bilayer indicates towards the possibility of interdiffusion. Further, sharp fall in the value of T{sub C} (53 K) also added our anxiety towards possible interdiffusion in BFO/LSMO system. Low-angle x-ray diffraction technique is used to investigate interdiffusion phenomena, and the temperature-dependent interdiffusivity is obtained by accurately monitoring the decay of the first-order modulation peak as a function of annealing time. It has been found that the diffusivity at different temperatures follows Arrhenius-type behavior. X-ray reflection (XRR) pattern obtained for the bilayer could not be fitted in the Parratt’s formalism, which confirms the interdiffusion in it. Depth profiles of {sup 209}Bi, {sup 56}Fe ions measured by secondary ion mass spectroscope (SIMS) further substantiate the diffusion of these ions from upper BFO layer into lower LSMO layer. - Highlights: • The LSMO/BFO bilayer is deposited by PLD method. • Structural, magnetic and interfacial properties of deposited films were studied. • In this article, we have raised the problem of interdiffusion in this bilayer, which can hinder its application in devices. Therefore, we feel that our article presents important finding in the area of ceramics research.

La2/3Sr1/3MnO3-La0.1Bi0.9MnO3 heterostructures for spin filtering

Science.gov (United States)

Gajek, M.; Bibes, M.; Varela, M.; Fontcuberta, J.; Herranz, G.; Fusil, S.; Bouzehouane, K.; Barthélémy, A.; Fert, A.

2006-04-01

We have grown heterostructures associating half-metallic La2/3Sr1/3MnO3 (LSMO) bottom electrodes and ferromagnetic La0.1Bi0.9MnO3 (LBMO) tunnel barriers. The layers in the heterostructures have good structural properties and top LBMO films (4 nm thick) have a very low roughness when deposited onto LSMO/SrTiO3(1.6 nm) templates. The LBMO films show an insulating behavior and a ferromagnetic character that are both preserved down to very low thicknesses. They are thus suitable for being used as tunnel barriers. Spin-dependent transport measurements performed on tunnel junctions defined from LSMO/SrTiO3/LBMO/Au samples show a magnetoresistance of up to ~90% at low temperature and bias. This evidences a spin-filtering effect by the LBMO layer, with a spin-filtering efficiency of ~35%.

Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

International Nuclear Information System (INIS)

Zhu, Junyu; Chen, Ying; Xu, Wenfei; Yang, Jing; Bai, Wei; Wang, Genshui; Duan, Chungang; Tang, Zheng; Tang, Xiaodong

2011-01-01

Polycrystalline La 0.7 Sr 0.3 MnO 3 (LSMO) films were prepared on SiO 2 /Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature ( 0.7 Sr 0.3 MnO 3 films were grown by a modified chemical solution deposition route. → High quality LSMO thin films were prepared directly onto SiO 2 /Si substrates. → Abnormality in resistivity of LSMO films at low temperatures was studied in detail. → The abnormality was mainly attributed to Kondo-like spin dependent scattering.

In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure

Science.gov (United States)

Guo, Qi; Xu, Xiaoguang; Wang, Fang; Lu, Yunhao; Chen, Jikun; Wu, Yanjun; Meng, Kangkang; Wu, Yong; Miao, Jun; Jiang, Yong

2018-06-01

We report the in-plane electric field controlled ferromagnetism of La2/3Sr1/3MnO3 (LSMO) films epitaxially deposited on [Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H c∥) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H c∥ is consistent with the Stoner–Wohlfarth model and first principle calculation with the electric field varying from ‑10 to 10 kV cm‑1. Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.

Improved corrosion resistance of spin-valve film

International Nuclear Information System (INIS)

Tetsukawa, H.; Hommura, H.; Okabe, A.; Soda, Y.

2007-01-01

We investigated the corrosion behavior and magnetoresistance of spin-valve film in order to improve the corrosion resistance of the spin-valve head for a tape recording system. The conventional spin-valve head (sub./Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta) with no diamond-like carbon (DLC) protective layer showed poor corrosion resistance. This is because the CoFe for ferromagnetic layer and Cu for spacer in the spin-valve film exhibited poor corrosion resistance. The corrosion resistance of the CoFe film and Cu film improved with the addition of Ni and Au, respectively. The spin-valve film (sub./Ta/NiFe/CoNiFe/CuAu/CoNiFe/PtMn/Ta) showed higher pitting potential than the conventional spin-valve film by +0.45 V. This presents a significant improvement over the conventional spin-valve film. We also investigated the effect of the composition of ferromagnetic layer and spacer on the magnetoresistance of the spin-valve film. The magnetoresistance of the spin-valve film by substitution of CoNiFe for CoFe in ferromagnetic layer decreased slightly. The magnetoresistance of the spin-valve film decreased as the addition of Au of the spacer increased. The diffusion at CoNiFe/CuAu interface has not been observed in annealing process. The quantitative relation between corrosion resistance and magnetoresistance of spin-valve film, and its ferromagnetic layer and spacer's compositions have been clarified. The output voltage at 50 Oe of the corrosion-resistant spin-valve head with CoNiFe ferromagnetic layer and CuAu spacer was about 50% of that of the conventional spin-valve head

Improved corrosion resistance of spin-valve film

Energy Technology Data Exchange (ETDEWEB)

Tetsukawa, H. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)]. E-mail: tetsukaw@arc.sony.co.jp; Hommura, H. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan); Okabe, A. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan); Soda, Y. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)

2007-06-15

We investigated the corrosion behavior and magnetoresistance of spin-valve film in order to improve the corrosion resistance of the spin-valve head for a tape recording system. The conventional spin-valve head (sub./Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta) with no diamond-like carbon (DLC) protective layer showed poor corrosion resistance. This is because the CoFe for ferromagnetic layer and Cu for spacer in the spin-valve film exhibited poor corrosion resistance. The corrosion resistance of the CoFe film and Cu film improved with the addition of Ni and Au, respectively. The spin-valve film (sub./Ta/NiFe/CoNiFe/CuAu/CoNiFe/PtMn/Ta) showed higher pitting potential than the conventional spin-valve film by +0.45 V. This presents a significant improvement over the conventional spin-valve film. We also investigated the effect of the composition of ferromagnetic layer and spacer on the magnetoresistance of the spin-valve film. The magnetoresistance of the spin-valve film by substitution of CoNiFe for CoFe in ferromagnetic layer decreased slightly. The magnetoresistance of the spin-valve film decreased as the addition of Au of the spacer increased. The diffusion at CoNiFe/CuAu interface has not been observed in annealing process. The quantitative relation between corrosion resistance and magnetoresistance of spin-valve film, and its ferromagnetic layer and spacer's compositions have been clarified. The output voltage at 50 Oe of the corrosion-resistant spin-valve head with CoNiFe ferromagnetic layer and CuAu spacer was about 50% of that of the conventional spin-valve head.

Manganite/Cuprate Superlattice as Artificial Reentrant Spin Glass

KAUST Repository

Ding, Junfeng; Cossu, Fabrizio; Lebedev, Oleg I.; Zhang, Yuqin; Zhang, Zhidong; Schwingenschlö gl, Udo; Wu, Tao

2016-01-01

magnetic memory effect discovered in oxide heterostructures composed of ultrathin manganite La0.7Sr0.3MnO3 (LSMO) and cuprate La2CuO4 (LCO) layers. These heterostructures are featured with enhanced ferromagnetism before entering the spin glass state: a

Experiments Result in Safer, Spin-Resistant Aircraft

Science.gov (United States)

2014-01-01

The General Aviation Spin Program at Langley Research Center devised the first-of-their-kind guidelines for designing more spin-resistant aircraft. Thanks to NASA's contributions, the Federal Aviation Administration introduced the Part 23 spin-resistance standard in 1991. Los Angeles-based ICON Aircraft has now manufactured a new plane for consumer recreational flying that meets the complete set of criteria specified for Part 23 testing.

Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials

International Nuclear Information System (INIS)

Štrbík, V.; Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V.; Knoška, J.; Gál, N.; Chromik, Š.; Sojková, M.; Pisarčík, M.

2017-01-01

Highlights: • Superconductor-ferromagnet-superconductor nanojunction. • Nanojunctions prepared by Ga"3"+ focused ion beam patterning. • Indication of triplet Cooper pair component in junction superconducting current. • Qualitative agreement with theoretical model. - Abstract: The lateral superconductor-ferromagnet–superconductor (SFS) nanojunctions based on high critical temperature superconductor YBa_2Cu_3O_x (YBCO) and half-metallic ferromagnet La_0_._6_7Sr_0_._3_3MnO_3 (LSMO) thin films were prepared to investigate a possible presence of long range triplet component (LRTC) of Cooper pairs in the LSMO. We applied Ga"3"+ focused ion beam patterning to create YBCO/LSMO/YBCO lateral type nanojunctions with LSMO length as small as 40 nm. The resistivity vs. temperature, critical current density vs. temperature and resistance vs. magnetic field dependence were studied to recognize the LRTC of Cooper pairs in the LSMO. A non-monotonic temperature dependence of junction critical current density and a decrease of the SFS nanojunction resistance in increased magnetic field were observed. Only weak manifestations of LRTC and some qualitative agreement with theory were found out in SFS nanojunctions realized from the perovskite materials. The presence of equal-spin triplet component of Cooper pairs in half-metallic LSMO ferromagnet is not such apparent as in SFS junctions prepared from low temperature superconductors NbTiN and half-metallic ferromagnet CrO_2.

Effect of resistance feedback on spin torque-induced switching of nanomagnets

International Nuclear Information System (INIS)

Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

2009-01-01

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

Electric-field control of electronic transport properties and enhanced magnetoresistance in La0.7Sr0.3MnO3/0.5BaZr0.2Ti0.8O3-0.5Ba0.7Ca0.3TiO3 lead-free multiferroic structures

Science.gov (United States)

Yan, Jian-Min; Gao, Guan-Yin; Liu, Yu-Kuai; Wang, Fei-Fei; Zheng, Ren-Kui

2017-10-01

We report the fabrication of lead-free multiferroic structures by depositing ferromagnetic La0.7Sr0.3MnO3 (LSMO) polycrystalline films on polished 0.5BaZr0.2Ti0.8O3-0.5Ba0.7Ca0.3TiO3 (BZT-BCT) piezoelectric ceramic substrates. By applying electric fields to the BZT-BCT along the thickness direction, the resistivity of LSMO films can be effectively manipulated via the piezoelectric strain of the BZT-BCT. Moreover, the LSMO polycrystalline films exhibit almost temperature independent and significantly enhanced magnetoresistance (MR) below TC. At T = 2 K and H = 8 T, the MR of polycrystalline films is approximately two orders of magnitude higher than that of LSMO epitaxial films grown on (LaAlO3)0.3(SrAl1/2Ta1/2O3)0.7 single-crystal substrates. The enhanced MR mainly results from the spin-polarized tunneling of charge carriers across grain boundaries. The LSMO/BZT-BCT structures with electric-field controllable modulation of resistivity and enhanced MR effect may have potential applications in low-energy consumption and environmentally friendly electronic devices.

Structural and magneto-dielectric property of (1-x)SBT-xLSMO nanocomposite thin films

International Nuclear Information System (INIS)

Maity, Sarmistha; Bhattacharya, D.; Dhar, A.; Ray, S.K.

2009-01-01

Full text: In recent years, interest in multiferroic materials has been increasing due to their potential applications. As single-phase multiferroic materials have very low room temperature magnetoelectric coefficient, recent studies have been concentrated on the possibility of attaining a coupling between the two order parameters by designing composites with magnetostrictive and piezoelectric phases via stress mediation. Composite thin films with homogenous matrix, composition spread with terminal layers being ferromagnetic and ferroelectric, layer-by-layer growth, superlattices, as well as epitaxial growth of ferromagnetic and ferroelectric layers on suitable substrates are been currently considered. In the present work, a nanostructured composite thin film of strontium bismuth tantalate (SBT) (ferroelectric layer) and lanthanum strontium manganese oxide (LSMO) (ferromagnetic layer) were fabricated using pulsed laser deposition. Phase separated multiferroic thin films with thickness varying from 50nm to 150nm were deposited from composite target (1-x)SBT-xLSMO with x=0.2, 0.5, 0.8. Grazing angle X-ray diffraction study combined with photo electron spectroscopy with depth profiling was carried out to study the phase separation. Interface quality of the thin film on silicon substrate was studied by Rutherford backscattering spectroscopy. Influence of film thickness and composition (x) on the electrical property of film was examined using impedance spectroscopy. The composite films exhibited ferroelectric as well as ferromagnetic characteristics at room temperature. A small kink in the dielectric spectra near the Neel temperature of LSMO confirmed the magneto-electric effect in the nanocomposite films

Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials

Energy Technology Data Exchange (ETDEWEB)

Štrbík, V., E-mail: vladimir.strbik@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská Cesta 9, Bratislava (Slovakia); Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V. [Institute of Electrical Engineering, SAS, Dúbravská Cesta 9, Bratislava (Slovakia); Knoška, J. [Center for Free-Electron Laser Science, DESY, Notkestraße 85, 22607, Hamburg (Germany); Department of Physics, University of Hamburg, Luruper Chaussee 149, 22607, Hamburg (Germany); Gál, N.; Chromik, Š.; Sojková, M.; Pisarčík, M. [Institute of Electrical Engineering, SAS, Dúbravská Cesta 9, Bratislava (Slovakia)

2017-02-15

Highlights: • Superconductor-ferromagnet-superconductor nanojunction. • Nanojunctions prepared by Ga{sup 3+} focused ion beam patterning. • Indication of triplet Cooper pair component in junction superconducting current. • Qualitative agreement with theoretical model. - Abstract: The lateral superconductor-ferromagnet–superconductor (SFS) nanojunctions based on high critical temperature superconductor YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) and half-metallic ferromagnet La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) thin films were prepared to investigate a possible presence of long range triplet component (LRTC) of Cooper pairs in the LSMO. We applied Ga{sup 3+} focused ion beam patterning to create YBCO/LSMO/YBCO lateral type nanojunctions with LSMO length as small as 40 nm. The resistivity vs. temperature, critical current density vs. temperature and resistance vs. magnetic field dependence were studied to recognize the LRTC of Cooper pairs in the LSMO. A non-monotonic temperature dependence of junction critical current density and a decrease of the SFS nanojunction resistance in increased magnetic field were observed. Only weak manifestations of LRTC and some qualitative agreement with theory were found out in SFS nanojunctions realized from the perovskite materials. The presence of equal-spin triplet component of Cooper pairs in half-metallic LSMO ferromagnet is not such apparent as in SFS junctions prepared from low temperature superconductors NbTiN and half-metallic ferromagnet CrO{sub 2}.

High temperature resistant nanofiber by bubbfil-spinning

Directory of Open Access Journals (Sweden)

Li Ya

2015-01-01

Full Text Available Heat-resisting nanofibers have many potential applications in various industries, and the bubbfil spinning is the best candidate for mass-production of such materials. Polyether sulfone/zirconia solution with a bi-solvent system is used in the experiment. Experimental result reveals that polyether sulfone/zirconia nanofibers have higher resistance to high temperature than pure polyether sulfone fibers, and can be used as high-temperature-resistant filtration materials.

High temperature spin-glass-like transition in La0.67Sr0.33MnO3 nanofibers near the Curie point.

Science.gov (United States)

Lu, Ruie; Yang, Sen; Li, Yitong; Chen, Kaiyun; Jiang, Yun; Fu, Bi; Zhang, Yin; Zhou, Chao; Xu, Minwei; Zhou, Xuan

2017-06-28

The glassy transition of superparamagnetic (SPM) (r glass-like (SGL) behavior near the Curie point (T C ), i.e., T 0 = 330 K, in La 0.67 Sr 0.33 MnO 3 (LSMO) nanofibers (NFs) composed of nanoparticles beyond the SPM size (r ≫ r 0 ), resulting in a significant increase of the glass transition temperature. This SGL transition near the T C of bulk LSMO can be explained to be the scenario of locally ordered clusters embedded in a disordered host, in which the assembly of nanoparticles has a magnetic core-shell model driven by surface spin glass. The presence of a surface spin glass of nanoparticles was proved by the Almeida-Thouless line δT f ∝ H 2/3 , exchange bias, and reduced saturation magnetization of the NF system. Composite dynamics were found - that is, both the SPM and the super-spin-glass (SSG) behavior are found in such an NF system. The bifurcation of the zero-field-cooled (ZFC) and field-cooled (FC) magnetization vs. temperature curves at the ZFC peak, and the flatness of FC magnetization involve SSG, while the frequency-dependent ac susceptibility anomaly follows the Vogel-Fulcher law that implies weak dipole interactions of the SPM model. This finding can help us to find a way to search for high temperature spin glass materials.

Spray-coatable negative photoresist for high topography MEMS applications

International Nuclear Information System (INIS)

Arnold, Markus; Haas, Sven; Schwenzer, Falk; Schwenzer, Gunther; Reuter, Danny; Geßner, Thomas; Voigt, Anja; Gruetzner, Gabi

2017-01-01

In microsystem technology, the lithographical processing of substrates with a topography is very important. Interconnecting lines, which are routed over sloped topography sidewalls from the top of the protecting wafer to the contact pads of the device wafer, are one example of patterning over a topography. For structuring such circuit paths, a photolithography process, and therefore a process for homogeneous photoresist coating, is required. The most flexible and advantageous way of depositing a homogeneous photoresist film over structures with high topography steps is spray-coating. As a pattern transfer process for circuit paths in cavities, the lift-off process is widely used. A negative resist, like ma-N (MRT) or AZnLOF (AZ) is favoured for lift-off processes due to the existing negative angle of the sidewalls. Only a few sprayable negative photoresists are commercially available. In this paper, the development of a novel negative resist spray-coating based on a commercially available single-layer lift-off resist for spin-coating, especially for the patterning of structures inside the cavity and on the cavity wall, is presented. A variety of parameters influences the spray-coating process, and therefore the patterning results. Besides the spray-coating tool and the parameters, the composition of the resist solution itself also influences the coating results. For homogeneous resist coverage over the topography of the substrate, different solvent combinations for diluting the resist solution, different chuck temperatures during the coating process, and also the softbake conditions, are all investigated. The solvent formulations and the process conditions are optimized with respect to the homogeneity of the resist coverage on the top edge of the cavities. Finally, the developed spray-coating process, the resist material and the process stability are demonstrated by the following applications: (i) lift-off, (ii) electroplating, (iii) the wet and (iv) the dry

Pressure-induced spin and charge transport in La1.25Sr1.75Mn2O7 single crystal

International Nuclear Information System (INIS)

Mydeen, K.; Arumugam, S.; Prabhakaran, D.; Yu, R.C.; Jin, C.Q.

2009-01-01

We investigated the effect of uniaxial and hydrostatic pressure on resistivity and ac-magnetic susceptibility of two-dimensional layered manganite, La 1.25 Sr 1.75 Mn 2 O 7 (LSMO125) to investigate the lattice effect on magnetic and electronic properties. Asymmetric role of uniaxial pressure, || and -perpendicular to c-axis on the spin flop and charge transport has been revealed while comparing hydrostatic pressure. Uniaxial pressure along c-axis increases metal-insulator transition temperature (T MI ) and ferromagnetic ordering temperature (T C ), whereas it decreases the resistivity along ab-plane (ρ ab ). In contrast to pressure along c-axis, T MI and T C decrease, whereas the resistivity along c-axis (ρ c ) increases with pressure || to ab-plane. ρ c /ρ ab is quite large, increasing with pressure and shows a peak at around T MI . Uniaxial pressure behaviour is strongly related to the Mn-O-Mn linkage between MnO 2 layers and the spin reorientation from the apical axis to the basal plane and vice versa with pressure. Both ρ ab and ρ c decrease whereas T MI and T C increases under hydrostatic pressure. Influence of spin and charge on magnetic and electrical properties under hydrostatic pressure are explained by pressure-induced cant between the MnO 2 bilayers and variation in bond lengths. The different pressure driving rates of T MI while measuring ρ ab and ρ c confirms that there is a strong competition between the in and out plane components under hydrostatic pressure

Exchange magnon induced resistance asymmetry in permalloy spin-Hall oscillators

Energy Technology Data Exchange (ETDEWEB)

Langenfeld, S. [Microelectronics Group, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE (United Kingdom); Walter Schottky Institut and Physik-Department, Technische Universität München, 85748 Garching (Germany); Tshitoyan, V.; Fang, Z.; Ferguson, A. J., E-mail: ajf1006@cam.ac.uk [Microelectronics Group, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE (United Kingdom); Wells, A.; Moore, T. A. [School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT (United Kingdom)

2016-05-09

We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-damping spin-transfer torque, we observe a change in resistance which we ascribe mainly to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magnetization, quantitatively explaining the data. The observed phenomena highlight the importance of exchange magnons on the operation of spin-Hall oscillators.

Effect of spin disorder on resistivity; Effet du desordre de spin sur la resistivite

Energy Technology Data Exchange (ETDEWEB)

Gennes, P.G. de [Commissariat a l' Energie Atomique, Saclay (France); Friedel, J [Faculte des Sciences de Paris, 75 (France)

1959-07-01

The resistivity of magnetic metals is studied in the case where the spin carriers are bound to the atoms (ex.: rare earths). The effect of short-range order is shown to be generally small even at the critical point. The inelasticity of the magnetic collisions between electrons and lattice can also be neglected, but this approximation becomes bad at low temperatures. In this region a spin-wave approximation is used. (author) [French] On etudie l'influence des phenomenes magnetiques sur la resistivite des metaux ou les porteurs de spin sont lies aux atomes (ex.: Terres rares). Une bonne approximation a temperature suffisamment elevee consiste a negliger l'ordre a courte distance et l'inelasticite des collisions magnetiques electrons-reseau. On montre que l'effet de l'ordre a courte distance est en general negligeable meme a la temperature critique. L'approximation devient fausse a basse temperature et doit alors etre remplacee par l'approximation des ondes de spin. (auteur)

Magneto-resistive and spin valve heads fundamentals and applications

CERN Document Server

Mallinson, John C

2002-01-01

This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.Th

Bilinear magnetoelectric resistance as a probe of three-dimensional spin texture in topological surface states

Science.gov (United States)

He, Pan; Zhang, Steven S.-L.; Zhu, Dapeng; Liu, Yang; Wang, Yi; Yu, Jiawei; Vignale, Giovanni; Yang, Hyunsoo

2018-05-01

Surface states of three-dimensional topological insulators exhibit the phenomenon of spin-momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, but the main technique currently available is spin- and angle-resolved photoemission spectroscopy. Here we reveal a close link between the spin texture and a new kind of magnetoresistance, which depends on the relative orientation of the current with respect to the magnetic field as well as the crystallographic axes, and scales linearly with both the applied electric and magnetic fields. This bilinear magnetoelectric resistance can be used to map the spin texture of topological surface states by simple transport measurements. For a prototypical Bi2Se3 single layer, we can map both the in-plane and out-of-plane components of the spin texture (the latter arising from hexagonal warping). Theoretical calculations suggest that the bilinear magnetoelectric resistance originates from conversion of a non-equilibrium spin current into a charge current under application of the external magnetic field.

Effect of Twisting and Stretching on Magneto Resistance and Spin Filtration in CNTs

Directory of Open Access Journals (Sweden)

Anil Kumar Singh

2017-08-01

Full Text Available Spin-dependent quantum transport properties in twisted carbon nanotube and stretched carbon nanotube are calculated using density functional theory (DFT and non-equilibrium green’s function (NEGF formulation. Twisting and stretching have no effect on spin transport in CNTs at low bias voltages. However, at high bias voltages the effects are significant. Stretching restricts any spin-up current in antiparallel configuration (APC, which results in higher magneto resistance (MR. Twisting allows spin-up current almost equivalent to the pristine CNT case, resulting in lower MR. High spin filtration is observed in PC and APC for pristine, stretched and twisted structures at all applied voltages. In APC, at low voltages spin filtration in stretched CNT is higher than in pristine and twisted ones, with pristine giving a higher spin filtration than twisted CNT.

La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited by pulsed laser ablation for spintronic applications

Energy Technology Data Exchange (ETDEWEB)

Martino, Maurizio; Cesaria, Maura; Caricato, Anna Paola [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); Maruccio, Giuseppe [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); NNL CNR-Istituto di Nanoscienze, Via Arnesano, 73100 Lecce (Italy); Cola, Adriano; Farella, Isabella [Institute for Microelectronics and Microsystems, IMM-CNR, 73100 Lecce (Italy)

2011-08-15

Among spintronic materials, mixed-valence manganite La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) is widely investigated due to its half-metal nature. LSMO thin films were grown by pulsed laser deposition (PLD) onto amorphous silica substrates heated at nearly 600 C. An ArF excimer laser was chosen to induce ablation due to its more energetic photons compared to the other quoted excimer laser sources. Different oxygen pressures were considered in order to study the influence of oxygen on the LSMO optical and electrical properties. In this respect, the visible transparency percentage of the deposited films is found good enough for spin-OLED applications. The absorption coefficient shows an absorption band tunable as a function of the oxygen content. Its energetic location and evolution with the oxygen content demonstrate it originates from radiative transitions between the spin-majority bands separated by the Jahn-Teller distortion. All of this lets relate the deposition oxygen pressure to the Mn{sup 3+} ion content in each film and interpret electrical data. The 200 and 100 nm thick samples exhibit weak metallic transport behavior at room temperature with a resistivity of 4.8 and 6.9 {omega} cm, respectively. Concerning the resistivity response versus temperature, the measured low metal-insulator transition temperature (150 K) is related to the sample structural features as involved by the depositions. Two different transport mechanisms describe the conductivity regime of the deposited samples, namely the small polaron variable range hopping (VRH) and the Arrhenius law. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin Chains

Science.gov (United States)

Rolf-Pissarczyk, Steffen; Yan, Shichao; Malavolti, Luigi; Burgess, Jacob A. J.; McMurtrie, Gregory; Loth, Sebastian

2017-11-01

We present the appearance of negative differential resistance (NDR) in spin-dependent electron transport through a few-atom spin chain. A chain of three antiferromagnetically coupled Fe atoms (Fe trimer) was positioned on a Cu2 N /Cu (100 ) surface and contacted with the spin-polarized tip of a scanning tunneling microscope, thus coupling the Fe trimer to one nonmagnetic and one magnetic lead. Pronounced NDR appears at the low bias of 7 mV, where inelastic electron tunneling dynamically locks the atomic spin in a long-lived excited state. This causes a rapid increase of the magnetoresistance between the spin-polarized tip and Fe trimer and quenches elastic tunneling. By varying the coupling strength between the tip and Fe trimer, we find that in this transport regime the dynamic locking of the Fe trimer competes with magnetic exchange interaction, which statically forces the Fe trimer into its high-magnetoresistance state and removes the NDR.

Magnetotransport properties of c-axis oriented La0.7Sr0.3MnO3 thin films on MgO-buffered SiO2/Si substrates

International Nuclear Information System (INIS)

Kang, Young-Min; Ulyanov, Alexander N.; Shin, Geo-Myung; Lee, Sung-Yun; Yoo, Dae-Gil; Yoo, Sang-Im

2009-01-01

c-axis oriented La 0.7 Sr 0.3 MnO 3 (LSMO) films on MgO-buffered SiO 2 /Si substrates were prepared, and their texture, microstructure, and magnetotransport properties were studied and compared to epitaxial LSMO/MgO (001) and polycrystalline LSMO/SiO 2 /Si films. c-axis oriented MgO buffer layers were obtained on amorphous SiO 2 layer through rf sputter deposition at low substrate temperature and consequent postannealing processes. In situ pulsed laser deposition-grown LSMO films, deposited on the MgO layer, show strong c-axis texture, but no in-plane texture. The c-axis oriented LSMO films which are magnetically softer than LSMO/SiO 2 /Si films exhibit relatively large low field magnetoresistance (LFMR) and sharper MR drop at lower field. The large LFMR is attributed to a spin-dependent scattering of transport current at the grain boundaries

Electrical resistivity of 5 f -electron systems affected by static and dynamic spin disorder

Science.gov (United States)

Havela, L.; Paukov, M.; Buturlim, V.; Tkach, I.; Drozdenko, D.; Cieslar, M.; Mašková, S.; Dopita, M.; Matěj, Z.

2017-06-01

Metallic 5 f materials have very strong coupling of magnetic moments and electrons mediating electrical conduction. It is caused by strong spin-orbit interaction, coming with high atomic number Z , together with involvement of the 5 f states in metallic bonding. We have used the recently discovered class of uranium (ultra)nanocrystalline hydrides, which are ferromagnets with high ordering temperature, to disentangle the origin of negative temperature coefficient of electrical resistivity. In general, the phenomenon of electrical resistivity decreasing with increasing temperature in metals can have several reasons. The magnetoresistivity study of these hydrides reveals that quantum effects related to spin-disorder scattering can explain the resistivity behavior of a broad class of actinide compounds.

Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La{sub 2/3}Sr{sub 1/3}MnO{sub 3} surfaces

Energy Technology Data Exchange (ETDEWEB)

Galbiati, Marta [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); Tatay, Sergio, E-mail: sergio.tatay@uv.es [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); Instituto de Ciencia Molecular (ICMol), Universitat de Valencia, C. Caterdratico Jose Beltran 2, 46980 Paterna (Spain); Delprat, Sophie [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); UPMC, Université Paris 06, 4 Place Jussieu, 75005 Paris (France); Barraud, Clément; Cros, Vincent; Jacquet, Eric [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); Coloma, Fernando [Servicios Técnicos de Investigación, Universidad de Alicante, E-03080 Alicante (Spain); Choueikani, Fadi; Otero, Edwige; Ohresser, Philippe [Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, FR-91192 Gif-sur-Yvette (France); Haag, Norman; Cinchetti, Mirko; Aeschlimann, Martin [Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, Erwin-Schroedinger Strasse 46, 67663 Kaiserslautern (Germany); Seneor, Pierre, E-mail: pierre.seneor@thalesgroup.com [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); and others

2015-10-30

Highlights: • Probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO. • Measure the modification of the Mn oxidation state of LSMO surface induced by the molecules grafting. • Evaluate the modification of the LSMO work function induced by the alkylphosphonic acids molecules. - Abstract: Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of the molecules on the LSMO surface induces a reduction of the Mn oxidation state. Ultraviolet photoelectron spectroscopy measurements also show that the LSMO work function can be modified by surface dipoles opening the door to both tune the charge and spin injection efficiencies in organic devices such as organic light-emitting diodes.

Spin Funneling for Enhanced Spin Injection into Ferromagnets

Science.gov (United States)

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-07-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.

SPIN1, negatively regulated by miR-148/152, enhances Adriamycin resistance via upregulating drug metabolizing enzymes and transporter in breast cancer.

Science.gov (United States)

Chen, Xu; Wang, Ya-Wen; Gao, Peng

2018-05-09

Spindlin1 (SPIN1), a protein highly expressed in several human cancers, has been correlated with tumorigenesis and development. Alterations of drug metabolizing enzymes and drug transporters are major determinants of chemoresistance in tumor cells. However, whether the metabolizing enzymes and transporters are under the control of SPIN1 in breast cancer chemoresistance has not yet been defined. SPIN1 expression in breast cancer cells and tissues was detected by quantitative real-time PCR (qRT-PCR) and immunohistochemistry. Chemosensitivity assays in vitro and in vivo were performed to determine the effect of SPIN1 on Adriamycin resistance. Downstream effectors of SPIN1 were screened by microarray and confirmed by qRT-PCR and Western blot. Luciferase assay and Western blot were used to identify miRNAs regulating SPIN1. We showed that SPIN1 was significantly elevated in drug-resistant breast cancer cell lines and tissues, compared with the chemosensitive ones. SPIN1 enhanced Adriamycin resistance of breast cancer cells in vitro, and downregulation of SPIN1 by miRNA could decrease Adriamycin resistance in vivo. Mechanistically, drug metabolizing enzymes and transporter CYP2C8, UGT2B4, UGT2B17 and ABCB4 were proven to be downstream effectors of SPIN1. Notably, SPIN1 was identified as a direct target of the miR-148/152 family (miR-148a-3p, miR-148b-3p and miR-152-3p). As expected, miR-148a-3p, miR-148b-3p or miR-152-3p could increase Adriamycin sensitivity in breast cancer cells in vitro. Moreover, high expression of SPIN1 or low expression of the miR-148/152 family predicted poorer survival in breast cancer patients. Our results establish that SPIN1, negatively regulated by the miR-148/152 family, enhances Adriamycin resistance in breast cancer via upregulating the expression of drug metabolizing enzymes and drug transporter.

Spin interferometry in anisotropic spin-orbit fields

Science.gov (United States)

Saarikoski, Henri; Reynoso, Andres A.; Baltanás, José Pablo; Frustaglia, Diego; Nitta, Junsaku

2018-03-01

Electron spins in a two-dimensional electron gas can be manipulated by spin-orbit (SO) fields originating from either Rashba or Dresselhaus interactions with independent isotropic characteristics. Together, though, they produce anisotropic SO fields with consequences on quantum transport through spin interference. Here we study the transport properties of modeled mesoscopic rings subject to Rashba and Dresselhaus [001] SO couplings in the presence of an additional in-plane Zeeman field acting as a probe. By means of one- and two-dimensional quantum transport simulations we show that this setting presents anisotropies in the quantum resistance as a function of the Zeeman field direction. Moreover, the anisotropic resistance can be tuned by the Rashba strength up to the point to invert its response to the Zeeman field. We also find that a topological transition in the field texture that is associated with a geometric phase switching is imprinted in the anisotropy pattern. We conclude that resistance anisotropy measurements can reveal signatures of SO textures and geometric phases in spin carriers.

Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

Science.gov (United States)

Riminucci, Alberto; Graziosi, Patrizio; Calbucci, Marco; Cecchini, Raimondo; Prezioso, Mirko; Borgatti, Francesco; Bergenti, Ilaria; Dediu, Valentin Alek

2018-04-01

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (˜0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm-3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.

Inverse spin Hall effect by spin injection

Science.gov (United States)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

Low-temperature processing of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing

International Nuclear Information System (INIS)

Pan, H.-C.; Chou, C.-C.; Tsai, H.-L.

2003-01-01

Fabrication of well-crystallized sol-gel derived (La 0.5 Sr 0.5 )MnO 3 (LSMO) buffer electrode layers and ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films using a continuous wave CO 2 laser annealing technique at a relatively low temperature was studied on a Pt/Ti/SiO 2 /Si substrate. Resistivity, carrier concentration and Hall mobility of laser-annealed conducting oxide LSMO films were optimized by changing the radiation fluence and the substrate temperature. The minimum resistivity of 1.27x10 -4 Ω cm was obtained for LSMO/Pt(Si) films prepared by laser irradiating at a fluence of 533 W/cm 2 with a simultaneous substrate heating at a temperature of 300 deg. C. The laser-annealed PZT films coated on LSMO/Pt(Si) substrate shows enhancement in remanent polarization from 10.1 to 17.3 μC/cm 2 as the PZT irradiated with a laser fluence of 433-483 W/cm 2 . The PZT(483 W/cm 2 )/LSMO(533 W/cm 2 )/Pt(Si) films showed a good fatigue resistance after 1x10 10 switching cycles with a bipolar electric field of 300 kV/cm, implying the feasibility of fabricating reliable ferroelectric-oxide electrode heterostructures using CO 2 laser annealing at temperatures lower than 400 deg. C

Large spin accumulation due to spin-charge coupling across a break-junction

Science.gov (United States)

Chen, Shuhan; Zou, Han; Chui, Siu-Tat; Ji, Yi

2013-03-01

We investigate large spin signals in break-junction nonlocal spin valves (NLSV). The break-junction is a nanometer-sized vacuum tunneling gap between the spin detector and the nonmagnetic channel, formed by electro-static discharge. The spin signals can be either inverted or non-inverted and the magnitudes are much larger than those of standard NLSV. Spin signals with high percentage values (10% - 0%) have been observed. When the frequency of the a.c. modulation is varied, the absolute magnitudes of signals remain the same although the percentage values change. These observations affirm the nonlocal nature of the measurements and rule out local magnetoresistive effects. Owing to the spin-charge coupling across the break-junction, the spin accumulation in a ferromagnet splits into two terms. One term decays on the charge screening length (0.1 nm) and the other decays on the spin diffusion length (10 nm nm). The magnitude of the former is proportional to the resistance of the junction. Therefore a highly resistive break-junction leads to a large spin accumulation and thereby a large spin signal. The signs of the spin signal are determined by the relationship between spin-dependent conductivities, diffusion constants, and density of states of the ferromagnet. This work was supported by US DOE grant No. DE-FG02-07ER46374.

Electric resistivity of Y (Fe1-xAlx)2 compounds in the spin glass region (0,10

International Nuclear Information System (INIS)

Souza, G.P. de.

1985-01-01

Measurements of electric resistivity in function of the temperature (1.5 1-x Al x2 pseudobinary intermetallic compounds in the region of concentration where there is a spin-glass behaviour, were carried out. The obtained results distinguished two behaviours. In certain cocentration, the minimum of resistivity at low temperatures was observed and in the others, a decrease of resistivity with increase of temperature up to environment temperature was found out. Magnetometry measurements, were carried out aiming to determine freezing critical temperature and of the order of long range, making possible to obtain more accurate measurements in the temperature range where the spin-glass, ferromagnetic and paramagnetic states occur in the compounds. (M.C.K.) [pt

Electrical resistivity of Y(Fe1-x Alx)2 in the spin glass concentration range

International Nuclear Information System (INIS)

Cunha, S.F. da; Souza, G.P. de; Takeushi, A.Y.

1986-01-01

The temperature dependence of the electrical resistivity of the Y(Fe 1-x Al x ) 2 system (0.125 ≤ x ≤ 0.25) was measured. This system exhibits a minimum at low temperatures for the concentration range where the phase diagram presents a spin glass-ferromagnetic transition. A negative temperature coefficient is observed at high temperatures for x > 0.18 and was attributed to the high value of the electrical resistivity in this concentration range. (Author) [pt

Spin fluctuation mechanism to normal state resistivity of iron-based superconductors La(O1-xFx)FeAs

International Nuclear Information System (INIS)

Choudhary, K.K.; Singh, S.; Prasad, D.; Kaurav, N.; Varshney, Dinesh

2010-01-01

Temperature-dependant resistivity of iron-based superconductors La(O 1-x F x )FeAs (for x = 0.12) is theoretically analysed by considering the strong spin fluctuations effect. In addition to the spin fluctuation-induced contribution the electron-phonon ρ e-ph (T) = AT, and electron-electron ρ e-e (T) = BT 2 contributions are also incorporated for complete understanding of experimental data. (author)

Spin heat accumulation induced by tunneling from a ferromagnet.

Science.gov (United States)

Vera-Marun, I J; van Wees, B J; Jansen, R

2014-02-07

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

Spin-disorder resistivity of heavy rare-earth metals from Gd to Tm: An ab-initio study

Science.gov (United States)

Glasbrenner, James; Belashchenko, Kirill

2010-03-01

Electrical resistivity of heavy rare-earth metals has a dominant contribution from thermal spin disorder scattering. In the paramagnetic state, this spin-disorder resistivity (SDR) decreases through the Gd-Tm series. Models based on the assumption of fully localized 4f states treated as S or J multiplets predict that SDR is proportional to S^2 (S is the 4f shell spin) times a quantum correction (S+1)/S or (J+1)/J. The interpretation of this correction using experimental results is ambiguous. Since the 4f bandwidth is not small compared to the multiplet splitting, it is not clear whether the 4f shells in rare-earth metals behave as if they were fully localized and have a good quantum number S or J. To address this issue, in this work we calculate the paramagnetic SDR of the rare-earth metal Gd-Tm series using a non-collinear implementation of the tight-binding linear muffin-tin orbital method. The conductance is found using the Landauer-B"uttiker approach applied to the active region of a varying size, averaging the conductance over random spin-disorder configurations and fitting its size dependence to Ohm's law. The results are compared with experiment and discussed. The sensitivity to basis set and the treatment of the 4f electrons, as well as the role of exchange enhancement in the conduction band is considered. The issue of the quantum correction is examined in light of the new results.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

Science.gov (United States)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Antibiotic consumption and resistance: results of the SPIN-UTI project of the GISIO-SItI.

Science.gov (United States)

Agodi, Antonella; Auxilia, Francesco; Barchitta, Martina; Brusaferro, Silvio; D'Errico, Marcello Mario; Montagna, Maria Teresa; Pasquarella, Cesira; Tardivo, Stefano; Mura, Ida

2015-01-01

To evaluate trends and association between antibiotic consumption and resistance during an eight-year period, from 2006 to 2013. Prospective multicenter study. Intensive Care Units (ICUs) participating in the four editions of the Italian nosocomial infections surveillance in the ICU Network (Sorveglianza Prospettica delle Infezioni Nosocomiali nelle Unità di Terapia Intensiva, SPIN-UTI project). The isolation density of selected species of microorganisms, antibiotic resistance rates (RRs), incidence density of resistant isolates and antimicrobial usage density were calculated. RRs of carbapenem-resistant Acinetobacter baumannii, of carbapenem-resistant Klebsiella pneumoniae, of third-generation cephalosporin (3GC)-resistant K. pneumoniae and of 3GC-resistant Escherichia coli showed significant increasing trends (p ≤0.001). The consumption of each antibiotic class varied with years, although not significantly. Significant strongly positive correlations were detected between RRs and antibiotic consumption. The present study describes high RRs and increasing trends of resistant microorganisms and highlights the need for continuous comprehensive strategies targeting not only the prudent use of antibiotics, but also infection control measures to limit the epidemic spread of resistant isolates.

Spin disordered resistivity of the Heusler Ni.sub.2./sub.MnGa-based alloys

Czech Academy of Sciences Publication Activity Database

Kamarád, Jiří; Kaštil, Jiří; Albertini, F.; Fabbrici, S.; Arnold, Zdeněk

2017-01-01

Roč. 131, č. 4 (2017), s. 1072-1074 ISSN 0587-4246 R&D Projects: GA ČR GAP204/12/0692 Institutional support: RVO:68378271 Keywords : spin disordered resistivity * magnetoresistance * Heusler alloys * Ni 2 MnGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.469, year: 2016

The effect of spin induced magnetization on Jeans instability of viscous and resistive quantum plasma

International Nuclear Information System (INIS)

Sharma, Prerana; Chhajlani, R. K.

2014-01-01

The effect of spin induced magnetization and electrical resistivity incorporating the viscosity of the medium is examined on the Jeans instability of quantum magnetoplasma. Formulation of the system is done by using the quantum magnetohydrodynamic model. The analysis of the problem is carried out by normal mode analysis theory. The general dispersion relation is derived from set of perturbed equations to analyse the growth rate and condition of self-gravitational Jeans instability. To discuss the influence of resistivity, magnetization, and viscosity parameters on Jeans instability, the general dispersion relation is reduced for both transverse and longitudinal mode of propagations. In the case of transverse propagation, the gravitating mode is found to be affected by the viscosity, magnetization, resistivity, and magnetic field strength whereas Jeans criterion of instability is modified by the magnetization and quantum parameter. In the longitudinal mode of propagation, the gravitating mode is found to be modified due to the viscosity and quantum correction in which the Jeans condition of instability is influenced only by quantum parameter. The other non-gravitating Alfven mode in this direction is affected by finite electrical resistivity, spin induced magnetization, and viscosity. The numerical study for the growth rate of Jeans instability is carried out for both in the transverse and longitudinal direction of propagation to the magnetic field. The effect of various parameters on the growth rate of Jeans instability in quantum plasma is analysed

Detailed study of the magnetic behaviour at low scale in La2/3Sr1/3MnO3

Science.gov (United States)

Arango, I. C.; E Ordoñez, J.; Dominguez, C.; Arango, C.; E Gomez, M.

2017-12-01

The La2/3Sr1/3MnO3 (LSMO) with Curie temperature above room temperature is the leading compound of the manganite perovskite family. Therefore, the physical properties are desirable for practical applications as magnetic sensors. However, when the dimensions are reduced the ferromagnetic properties of material are weakened. In this research, we have grown La2/3Sr1/3MnO3/SrTiO3 thin films by sputtering DC at high oxygen pressure at 830°C. X-Ray Diffraction (XRD) analysis reveals that only (0 0 2) LSMO peak are present, indicating a textured growth. The samples morphology was characterized by Atomic Force Microscopy (AFM). Additionally, LSMO microwires were patterned by UV lithography; the devices are a well-defined channel with current and voltage leads enabling four points resistance measurements. Resistivity versus temperature curves displays typical manganite behaviour with metal-insulator transition ∼350K. We study the electric and magnetotransport properties in LSMO film and in wire channel and their dependence with size (width and length) for potential applications like magnetic sensors.

Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling.

Science.gov (United States)

Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo

2015-07-01

We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

Biradical and triradical organic magnetic molecules as spin filters and rectifiers

International Nuclear Information System (INIS)

Zhu, L.; Yao, K.L.; Liu, Z.L.

2012-01-01

Graphical abstract: (a) Negative differential resistance (NDR) characteristic and antiparallel spin-current (ASC) rectification; (b) spin-current (SC) rectification and charge-current (CC) rectification properties Display Omitted Highlights: ► Organic magnetic molecules at gold electrodes as spin/charge rectifier. ► Spin diode/rectification stems from length and asymmetry of molecular framework. ► Negative differential resistance, spin-filtering and switching evidenced. - Abstract: We have theoretically investigated the spin-polarized transport properties of molecular junctions consisting of biradical and triradical organic magnetic molecules sandwiched between two symmetric gold electrodes, respectively. It shows that these junctions function as a spin rectifier or a combination of spin and charge rectifiers with high spin rectification ratios exceeding 100, wherein the spin diode/rectification effect stems from the conjugated length and asymmetry of the molecular framework, which is the pre-requisite for electronic asymmetry of the adsorbed species. The negative differential resistance, spin-filtering and switching properties are also unveiled. In particular, it is revealed that the strong couplings between the electrodes and molecules are responsible for the negative differential resistance.

Resistivity behavior of optimized PbTiO3 thin films prepared by spin coating method

Science.gov (United States)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2018-05-01

Th is study presents the resistivity behavior of PbTiO3 thin films which were prepared towards metal-insulator-metal capacitor device fabrication. The PbTiO3 thin films were prepared through sol-gel spin coating method that involved various deposition parameters that is (1) different molar concentration of PbTiO3 solutions, (2) various additional PbAc-content in PbTiO3 solutions, and (3) various annealing temperature on PbTiO3 thin films. Hence, an electrical measurement of current versus voltage was done to determine the resistivity behavior of PbTiO3 thin films.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Science.gov (United States)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Biradical and triradical organic magnetic molecules as spin filters and rectifiers

Energy Technology Data Exchange (ETDEWEB)

Zhu, L. [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Yao, K.L., E-mail: klyao@hust.edu.cn [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); International Center of Materials Physics, Chinese Academy of Science, Shengyang 110015 (China); Liu, Z.L. [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

2012-03-13

Graphical abstract: (a) Negative differential resistance (NDR) characteristic and antiparallel spin-current (ASC) rectification; (b) spin-current (SC) rectification and charge-current (CC) rectification properties Display Omitted Highlights: Black-Right-Pointing-Pointer Organic magnetic molecules at gold electrodes as spin/charge rectifier. Black-Right-Pointing-Pointer Spin diode/rectification stems from length and asymmetry of molecular framework. Black-Right-Pointing-Pointer Negative differential resistance, spin-filtering and switching evidenced. - Abstract: We have theoretically investigated the spin-polarized transport properties of molecular junctions consisting of biradical and triradical organic magnetic molecules sandwiched between two symmetric gold electrodes, respectively. It shows that these junctions function as a spin rectifier or a combination of spin and charge rectifiers with high spin rectification ratios exceeding 100, wherein the spin diode/rectification effect stems from the conjugated length and asymmetry of the molecular framework, which is the pre-requisite for electronic asymmetry of the adsorbed species. The negative differential resistance, spin-filtering and switching properties are also unveiled. In particular, it is revealed that the strong couplings between the electrodes and molecules are responsible for the negative differential resistance.

Polarized neutron reflectivity studies on epitaxial BiFeO3/La0.7Sr0.3MnO3 heterostructure integrated with Si (100

Directory of Open Access Journals (Sweden)

S. R. Singamaneni

2018-05-01

Full Text Available This work reports polarized neutron reflectivity (PNR measurements performed using the Magnetism Reflectometer at Oak Ridge National Laboratory on epitaxial BiFeO3(BFO/La0.7Sr0.3MnO3(LSMO/SrTiO3(STO/MgO/TiN heterostructure deposited on Si (100 substrates. By measuring the angular dependence of neutrons reflected from the sample, PNR can provide insights on interface magnetic spin structure, chemical composition and magnetic depth profiles with a nanometer resolution. Our first analysis of nuclear scattering length density (NSLD and magnetic scattering length density (MSLD depth profiles measured at 4 K have successfully reproduced most of the expected features of this heterostructure, such as the NSLD for the Si, TiN, MgO, STO, LSMO layers and remanent magnetization (2.28μB/Mn of bulk LSMO. However, the SLD of the BFO is decreased by about 30% from the expected value. When 5 V was applied across the BFO/LSMO interface, we found that the magnetic moment of the LSMO layer could be varied by about 15-20% at 6 K. Several mechanisms such as redistribution of oxygen vacancies, interface strain, charge screening and valence state change at the interface could be at play. Work is in progress to gain an improved in-depth understanding of these effects using MOKE and STEM-Z interface specific measurements.

Polarized neutron reflectivity studies on epitaxial BiFeO3/La0.7Sr0.3MnO3 heterostructure integrated with Si (100)

Science.gov (United States)

Singamaneni, S. R.; Prater, J. T.; Glavic, A.; Lauter, V.; Narayan, J.

2018-05-01

This work reports polarized neutron reflectivity (PNR) measurements performed using the Magnetism Reflectometer at Oak Ridge National Laboratory on epitaxial BiFeO3(BFO)/La0.7Sr0.3MnO3(LSMO)/SrTiO3(STO)/MgO/TiN heterostructure deposited on Si (100) substrates. By measuring the angular dependence of neutrons reflected from the sample, PNR can provide insights on interface magnetic spin structure, chemical composition and magnetic depth profiles with a nanometer resolution. Our first analysis of nuclear scattering length density (NSLD) and magnetic scattering length density (MSLD) depth profiles measured at 4 K have successfully reproduced most of the expected features of this heterostructure, such as the NSLD for the Si, TiN, MgO, STO, LSMO layers and remanent magnetization (2.28μB/Mn) of bulk LSMO. However, the SLD of the BFO is decreased by about 30% from the expected value. When 5 V was applied across the BFO/LSMO interface, we found that the magnetic moment of the LSMO layer could be varied by about 15-20% at 6 K. Several mechanisms such as redistribution of oxygen vacancies, interface strain, charge screening and valence state change at the interface could be at play. Work is in progress to gain an improved in-depth understanding of these effects using MOKE and STEM-Z interface specific measurements.

Next generation spin torque memories

CERN Document Server

Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

2017-01-01

This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

A coatable, light-weight, fast-response nanocomposite sensor for the in situ acquisition of dynamic elastic disturbance: from structural vibration to ultrasonic waves

Science.gov (United States)

Zeng, Zhihui; Liu, Menglong; Xu, Hao; Liu, Weijian; Liao, Yaozhong; Jin, Hao; Zhou, Limin; Zhang, Zhong; Su, Zhongqing

2016-06-01

Inspired by an innovative sensing philosophy, a light-weight nanocomposite sensor made of a hybrid of carbon black (CB)/polyvinylidene fluoride (PVDF) has been developed. The nanoscalar architecture and percolation characteristics of the hybrid were optimized in order to fulfil the in situ acquisition of dynamic elastic disturbance from low-frequency vibration to high-frequency ultrasonic waves. Dynamic particulate motion induced by elastic disturbance modulates the infrastructure of the CB conductive network in the sensor, with the introduction of the tunneling effect, leading to dynamic alteration in the piezoresistivity measured by the sensor. Electrical analysis, morphological characterization, and static/dynamic electromechanical response interrogation were implemented to advance our insight into the sensing mechanism of the sensor, and meanwhile facilitate understanding of the optimal percolation threshold. At the optimal threshold (˜6.5 wt%), the sensor exhibits high fidelity, a fast response, and high sensitivity to ultrafast elastic disturbance (in an ultrasonic regime up to 400 kHz), yet with an ultralow magnitude (on the order of micrometers). The performance of the sensor was evaluated against a conventional strain gauge and piezoelectric transducer, showing excellent coincidence, yet a much greater gauge factor and frequency-independent piezoresistive behavior. Coatable on a structure and deployable in a large quantity to form a dense sensor network, this nanocomposite sensor has blazed a trail for implementing in situ sensing for vibration- or ultrasonic-wave-based structural health monitoring, by striking a compromise between ‘sensing cost’ and ‘sensing effectiveness’.

La0.7Sr0.3MnO3 Thin Films for Magnetic and Temperature Sensors at Room Temperature

Directory of Open Access Journals (Sweden)

Sheng Wu

2012-03-01

Full Text Available In this paper, the potentialities of the manganese oxide La0.7Sr0.3MnO3 (LSMO for the realization of sensitive room temperature thermometers and magnetic sensors are discussed. LSMO exhibits both a large change of the resistance versus temperature at its metal-to-insulator transition (about 330 K and low field magnetoresistive effects at room temperature. The sensor performances are described in terms of signal-to-noise ratio in the 1 Hz - 100 kHz frequency range. It is shown that due to the very low 1/f noise level, LSMO based sensors can exhibit competitive performances at room temperature.

Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

Science.gov (United States)

Batley, J. T.; Rosaond, M. C.; Ali, M.; Linfield, E. H.; Burnell, G.; Hickey, B. J.

Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to govern spin-relaxation and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. However, in lateral spin valves, measurements have found that at low temperatures the spin diffusion length unexpectedly decreases. We have fabricated lateral spin valves from Cu with different concentrations of magnetic impurities. Through temperature dependent charge and spin transport measurements we present clear evidence linking the presence of the Kondo effect within Cu to the suppression of the spin diffusion length below 30 K. We have calculated the spin-relaxation rate and isolated the contribution from magnetic impurities. At very low temperatures electron-electron interactions play a more prominent role in the Kondo effect. Well below the Kondo temperature a strong-coupling regime exists, where the moments become screened and the magnetic dephasing rate is reduced. We also investigate the effect of this low temperature regime (>1 K) on a pure spin current. This work shows the dominant role of Kondo scattering, even in low concentrations of order 1 ppm, within pure spin transport.

Anisotropic Resistivities of Precisely Oxygen Controlled Single-Crystal Bi2Sr2CaCu2O8+δ: Systematic Study on ''Spin Gap'' Effect

International Nuclear Information System (INIS)

Watanabe, T.; Matsuda, A.; Fujii, T.; Matsuda, A.

1997-01-01

The in-plane resistivity ρ a (T) and the out-of-plane resistivity ρ c (T) have been systematically measured for Bi 2 Sr 2 CaCu 2 O 8+δ single crystals with their oxygen contents precisely controlled. In the underdoped region, deviation from T -linear in-plane resistivity, which evidences the opening of the spin gap, is clearly observed, while the out-of-plane resistivity is well reproduced by the activation-type phenomenological formula ρ c (T)=(a/T)exp (Δ/T)+c . In contrast to the YBa 2 Cu 3 O 7-δ system, we find that the onset of the semiconducting ρ c (T) does not coincide with the opening of the spin gap seen in the ρ a (T) in this Bi 2 Sr 2 CaCu 2 O 8+δ system. copyright 1997 The American Physical Society

The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

Science.gov (United States)

Grollier, Julie

2013-03-01

Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

Electrical resistivity, susceptibility and heat capacity of cubic Kondo compound YbCu.sub.5./sub. prepared by melt-spinning technique

Czech Academy of Sciences Publication Activity Database

Reiffers, M.; Idzikowski, B.; Šebek, Josef; Šantavá, Eva; Ilkovič, S.; Pristáš, G.

378-380, - (2006), s. 738-739 ISSN 0921-4526 Institutional research plan: CEZ:AV0Z10100520 Keywords : YbCu 5 * susceptibility * electrical resistivity * melt spinning Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.872, year: 2006

Nanoscale electrochemical metallization memories based on amorphous (La, Sr)MnO3 using ultrathin porous alumina masks

International Nuclear Information System (INIS)

Liu, Dongqing; Zhang, Chaoyang; Wang, Nannan; Cheng, Haifeng; Wang, Guang; Shao, Zhengzheng; Zhu, Xuan

2014-01-01

Nanoscale electrochemical metallization (ECM) memories based on amorphous La 1−x Sr x MnO 3 (a-LSMO) were fabricated using ultrathin porous alumina masks. The ultrathin alumina masks, with thicknesses of about 200 nm and pore diameters of about 80 nm, were fabricated through a typical two-step anodization electrochemical procedure and transferred onto conductive Pt/Ti/SiO 2 /Si substrates. Resistive switching (RS) properties of the individual Ag/a-LSMO/Pt ECM cell were directly measured using a conductive atomic force microscope. The cells exhibited typical RS characteristics and the OFF/ON resistance ratio is as high as 10 2 . Reproducible RS behaviours on the same ECM cell and the I–V cycles obtained from different ECM cells ensured that the RS properties in nanoscale Ag/a-LSMO/Pt cells are reproducible and reliable. This work provides an effective approach for the preparation of nanostructured large-scale ordered ECM memories or memristors. (paper)

Investigation of DC current injection effect on the microwave characteristics of HTS YBCO microstrip resonators

Energy Technology Data Exchange (ETDEWEB)

Nurgaliev, T., E-mail: timur@ie.bas.bg [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Blagoev, B.; Mateev, E.; Neshkov, L. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Strbik, V. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Uspenskaya, L. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow (Russian Federation); Nedkov, I. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Chromik, Š. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia)

2014-03-15

Highlights: • Current (spin) injection effect in LSMO/YBCO was studied by impedance measurements. • Complex impedance of YBCO increases at current injection from LSMO to YBCO at 77 K. • This increase is due to an increase of the quasiparticle conductivity of YBCO. • Injection does not significantly affect the relaxation time of the quasiparticles. - Abstract: The DC current injection effect from a ferromagnetic (FM) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) to a high temperature superconducting (HTS) Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film was investigated by the microwave surface impedance measurements in a FM/HTS structure, formed as a microstrip resonator for improving the sensitivity of the experiments. The quality factor and the resonance frequency of this structure were found to strongly depend on the current strength, injected from the LSMO electrode into the HTS microstrip electrode. The magnetic penetration depth and the quasiparticle conductivity of the HTS component were determined to increase under DC current injection process, which in all probability stimulated breaking of Cooper pairs and led to a decrease of the superfluid concentration and an increase of the normal fluid concentration without significantly affecting the relaxation time of the quasiparticles.

One-step patterning of double tone high contrast and high refractive index inorganic spin-on resist

Energy Technology Data Exchange (ETDEWEB)

Zanchetta, E.; Della Giustina, G.; Brusatin, G. [Industrial Engineering Department and INSTM, Via Marzolo 9, 35131 Padova (Italy)

2014-09-14

A direct one-step and low temperature micro-fabrication process, enabling to realize large area totally inorganic TiO₂ micro-patterns from a spin-on resist, is presented. High refractive index structures (up to 2 at 632 nm) without the need for transfer processes have been obtained by mask assisted UV lithography, exploiting photocatalytic titania properties. A distinctive feature not shared by any of the known available resists and boosting the material versatility, is that the system behaves either as a positive or as negative tone resist, depending on the process parameters and on the development chemistry. In order to explain the resist double tone behavior, deep comprehension of the lithographic process parameters optimization and of the resist chemistry and structure evolution during the lithographic process, generally uncommon in literature, is reported. Another striking property of the presented resist is that the negative tone shows a high contrast up to 19, allowing to obtain structures resolution down to 2 μm wide. The presented process and material permit to directly fabricate different titania geometries of great importance for solar cells, photo-catalysis, and photonic crystals applications.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

Science.gov (United States)

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Magnetically controlled space charge capacitance at La{sub 1-x}Sr{sub x}MnO{sub 3}/Sr{sub x}La{sub 1-x}TiO{sub 3} interfaces

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Rainer; Garcia-Barriocanal, Javier; Leon, Carlos; Santamaria, Jacobo [Facultad de Ciencias Fisicas, Dpto. Fisica Aplicada III, Universidad Complutense de Madrid, GFMC (Spain); Unidad Asociada ' ' Laboratorio de Heteroestructuras con Aplicacion en Espintronica' ' , UCM/CSIC, Madrid (Spain); Varela, Maria [Facultad de Ciencias Fisicas, Dpto. Fisica Aplicada III, Universidad Complutense de Madrid, GFMC (Spain); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Instituto Pluridisciplinar, Universidad Complutense de Madrid (Spain); Garcia-Hernandez, Mar [Instituto de Ciencia de Materiales de Madrid - Consejo Superior de Investigaciones Cientificas (ICMM-CSIC), Madrid (Spain)

2016-08-15

This work reports on magnetocapacitance (MC) effects in epitaxial heterostructures of nominally 15 unit cells (u.c.) LaMnO{sub 3} (LMO) and 2 u.c. SrTiO{sub 3} (STO) with an alternating layer-repetition rate of 8: (LMO{sub 15}/STO{sub 2}){sub 8}. Epitaxial multilayer growth at high temperatures (900 C) activates a selective inter-diffusion of La{sup 3+} and Sr{sup 2+} cations across the interfaces, which gives rise to Sr p-doping of the LMO and La n-doping of the STO layers. MC effects at the buried La{sub 1-x}Sr{sub x}MnO{sub 3}/Sr{sub x}La{sub 1-x}TiO{sub 3} (LSMO/SLTO) interfaces are probed by frequency, temperature and magnetic field dependent AC impedance spectroscopy. The technique is shown to be appropriate to account for the separate analysis of different resistance and capacitance contributions at the buried interfaces. As a result of the La/Sr inter-diffusion process, Schottky barriers are formed at the LSMO/SLTO interfaces, which give rise to massive MC of up to ∼ -200% in the out-of-plane film direction. The capacitance of the manganite-titanate LSMO/SLTO interfaces may be coupled indirectly to the resistance of the LSMO layers, because the Schottky space-charge layers and their capacitance can be modulated by varying the concentration of highly mobile charge carriers in the LSMO with a magnetic field. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Spin Switching via Quantum Dot Spin Valves

Science.gov (United States)

Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

2018-01-01

We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

Electronic properties in a two-dimensional disordered electron liquid: Spin-valley interplay

International Nuclear Information System (INIS)

Burmistrov, I. S.; Chtchelkatchev, N. M.

2008-01-01

We report a detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity and spin and valley susceptibilities. We explain qualitatively the nonmonotonic dependence of the resistivity on temperature in the presence of a parallel magnetic field. In the presence of either spin or valley splitting we predict a temperature dependence of the resistivity with two maximum points

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Directory of Open Access Journals (Sweden)

Robert Göckeritz

2016-04-01

Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

Electric field modulated conduction mechanism in Al/BaTiO3/La0.67Sr0.33MnO3 heterostructures

KAUST Repository

Zheng, Dongxing; Li, Dong; Gong, Junlu; Jin, Chao; Li, Peng; Zhang, Xixiang; Bai, Haili

2017-01-01

Mediating a metastable state is a promising way to achieve a giant modulation of physical properties in artificial heterostructures. A metastable state La0.67Sr0.33MnO3 (LSMO) layer suffering tensile strain was grown on MgO substrates. Incorporating with the ferroelectric BaTiO3 (BTO) layer, an accumulation or depletion state controlled by electric fields can be formed at the BTO/LSMO interface, which drives a switching of the conduction mechanism between space charge limited conduction and Poole-Frenkel emission, corresponding to the low and high resistance states. Our results lighten an effective way for electric-field modulated resistance states in multiferroic magnetoelectric devices.

Electric field modulated conduction mechanism in Al/BaTiO3/La0.67Sr0.33MnO3 heterostructures

KAUST Repository

Zheng, Dongxing

2017-08-08

Mediating a metastable state is a promising way to achieve a giant modulation of physical properties in artificial heterostructures. A metastable state La0.67Sr0.33MnO3 (LSMO) layer suffering tensile strain was grown on MgO substrates. Incorporating with the ferroelectric BaTiO3 (BTO) layer, an accumulation or depletion state controlled by electric fields can be formed at the BTO/LSMO interface, which drives a switching of the conduction mechanism between space charge limited conduction and Poole-Frenkel emission, corresponding to the low and high resistance states. Our results lighten an effective way for electric-field modulated resistance states in multiferroic magnetoelectric devices.

Solid oxide fuel cells with apatite-type lanthanum silicate-based electrolyte films deposited by radio frequency magnetron sputtering

Science.gov (United States)

Liu, Yi-Xin; Wang, Sea-Fue; Hsu, Yung-Fu; Wang, Chi-Hua

2018-03-01

In this study, solid oxide fuel cells (SOFCs) containing high-quality apatite-type magnesium doped lanthanum silicate-based electrolyte films (LSMO) deposited by RF magnetron sputtering are successfully fabricated. The LSMO film deposited at an Ar:O2 ratio of 6:4 on an anode supported NiO/Sm0.2Ce0·8O2-δ (SDC) substrate followed by post-annealing at 1000 °C reveals a uniform and dense c-axis oriented polycrystalline structure, which is well adhered to the anode substrate. A composite SDC/La0·6Sr0·4Co0·2Fe0·8O3-δ cathode layer is subsequently screen-printed on the LSMO deposited anode substrate and fired. The SOFC fabricated with the LSMO film exhibits good mechanical integrity. The single cell with the LSMO layer of ≈2.8 μm thickness reports a total cell resistance of 1.156 and 0.163 Ωcm2, open circuit voltage of 1.051 and 0.982 V, and maximum power densities of 0.212 and 1.490 Wcm-2 at measurement temperatures of 700 and 850 °C, respectively, which are comparable or superior to those of previously reported SOFCs with yttria stabilized zirconia electrolyte films. The results of the present study demonstrate the feasibility of deposition of high-quality LSMO films by RF magnetron sputtering on NiO-SDC anode substrates for the fabrication of SOFCs with good cell performance.

Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems

Science.gov (United States)

Luengo-Kovac, M.; Moraes, F. C. D.; Ferreira, G. J.; Ribeiro, A. S. L.; Gusev, G. M.; Bakarov, A. K.; Sih, V.; Hernandez, F. G. G.

2017-06-01

Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with an uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data show large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.

Spin Injection in Indium Arsenide

Directory of Open Access Journals (Sweden)

Mark eJohnson

2015-08-01

Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

Science.gov (United States)

Wen, Hua; Zhu, Tiancong; Luo, Yunqiu Kelly; Amamou, Walid; Kawakami, Roland K.

2014-05-01

Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

Role of spin polarized tunneling in magnetoresistance and low

Indian Academy of Sciences (India)

Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue

Flying spin qualities testing of airplane

Directory of Open Access Journals (Sweden)

Kostić Čedomir J.

2015-01-01

Full Text Available In this paper is presented the theoretical analysis of origins and characteristics of spinning motion. There are precise explanation of every stage spin flight and basic meaning of notion. Personated equation of motion in spin and equitation of motion airplane in settled spin motion, analysis of them and general recommendation for pilots for recovering from spins. Introduced in valid military and civil specifications flight test demonstration requirements for departure resistance and flying stall and spin qualities testing of airplane. Special attention was given on predicting departure, stall and spin susceptibility and theoretical analysis in the name of magnify flight testing security. There are explanation of test equipment and methodology of flying qualities testing of airplanes. Like a support of this theme are described method and results of flight stall and spin qualities testing of airplane G-4(N-62 super see-gull with precise recommendation for pilots for recovering from spins, from TOC SLI VS (Technical testing center, department for fight testing Air Force of Serbia.

Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

Science.gov (United States)

Zhang, Steven S.-L.; Heinonen, Olle

2018-04-01

We study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does the TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004), 10.1103/PhysRevLett.93.096806]. We derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.

Tuning Interfacial States Using Organic Molecules as Spin Filters

Science.gov (United States)

Deloach, Andrew; Wang, Jingying; Papa, Christopher M.; Myahkostupov, Mykhaylo; Castellano, Felix N.; Dougherty, Daniel B.; Jiang, Wei; Liu, Feng

Organic semiconductors are known to have long spin relaxation times which makes them a good candidate for spintronics. However, an issue with these materials is that at metal-organic interfaces there is a conductivity mismatch problem that suppresses spin injection. To overcome this, orbital mixing at the interface can be tuned with an organic spacer layer to promote the formation of spin polarized interface states. These states act as a ``spin filters'' and have been proposed as an explanation for the large tunneling magnetoresistance seen in devices using tris-(8-hydroxyquinolate)-aluminum(Alq3). Here, we show that the spin polarized interface states can be tuned from metallic to resistive by subtle changes in molecular orbitals. This is done using spin polarized scanning tunneling microscopy with three different tris-(8-hydroxyquinolate) compounds: aluminum, chromium, and iron. Differences in d-orbital mixing results in different mechanisms of interfacial coupling, giving rise to metallic or resistive interface states. Supported by the U.S. DoE award No. DE-SC0010324.

Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit2-based device with graphene nanoribbon electrodes

Directory of Open Access Journals (Sweden)

N. Liu

2017-12-01

Full Text Available We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC and the antiparallel configuration (APC. At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

Spin-accumulation effect in magnetic nano-bridge

International Nuclear Information System (INIS)

Khvalkovskii, A.V.; Zvezdin, A.A.; Zvezdin, K.A.; Pullini, D.; Perlo, P.

2004-01-01

Large values of magnetoresistance experimentally observed in magnetic nano-contacts and nano-wires are explained in terms of spin accumulation. The investigation of the spin-accumulation effect in magnetic nano-contacts (Phys. Rev. Lett. 82 (1999) 2923) and nano-bridges (JETP Lett. 75 (10) (2002) 613), which are considered to be very promising for various spintronic applications, is presented. The two-dimensional spin-diffusion problem in a magnetic nano-bridge is solved. Dependences of the specific resistance of the domain wall and of the distribution of non-equilibrium spin density on the nano-bridge geometry and the material parameters are obtained

Spin-splitting in p-type Ge devices

Energy Technology Data Exchange (ETDEWEB)

Holmes, S. N., E-mail: s.holmes@crl.toshiba.co.uk; Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Morrison, C.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-08-28

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Science.gov (United States)

Seeger, R. L.; Garcia, W. J. S.; Dugato, D. A.; da Silva, R. B.; Harres, A.

2018-04-01

Devices based on spin rectification effects are of great interest for broadband communication applications, since they allow the rectification of radio frequency signals by simple ferromagnetic materials. The phenomenon is enhanced at ferromagnetic resonance condition, which may be attained when an external magnetic field is applied. The necessity of such field, however, hinders technological applications. Exploring spin rectification and spin Hall effects in exchange-biased samples, we were able to rectify radio frequency signals without an external applied magnetic field. Direct voltages of the order of μV were obtained when Ta/NiFe/FeMn/Ta thin films were exposed to microwaves in a shorted microstrip line for a relatively broad frequency range. Connecting the films to a resistive load, we estimated the fraction of the incident radio frequency power converted into usable dc power.

The molecular spin filter constructed from 1D organic chain

International Nuclear Information System (INIS)

Chen, Wei; Xu, Ning; Wang, Baolin; Bian, Baoan

2014-01-01

We proposed a molecular spin filter, which is constructed from the 1D metallic organic chain (Fe n+1 (C 6 H 4 ) n ). The spin-polarized transport properties of the molecular spin filter are explored by combining density functional theory with nonequilibrium Green's function formalism. Theoretical results reveal that Fe n+1 (C 6 H 4 ) n molecular chain exhibits robust spin filtering effect, and only the spin-down electrons can transmit through the molecular chain. At the given bias voltage window [−1 eV,1 eV], the calculated spin filter efficiency is close to 100% in the case of n≥3. We find that the effect of spin polarization origin from both Fe n+1 and (C 6 H 4 ) n . In addition, negative difference resistance behavior appears in Fe n+1 (C 6 H 4 ) n molecular chain. The results can help us understand the spin transport properties of organic molecular chain. - Highlights: • Theoretical results reveal that Fe n+1 (C 6 H 4 ) n molecular chain exhibits robust spin filtering effect. • The effect of spin polarization origin from both of Fe n+1 and (C 6 H 4 ) n . • Negative difference resistance behavior appears in Fe n+1 (C 6 H 4 ) n molecular chain

Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

KAUST Repository

Manchon, Aurelien

2017-01-01

We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Science.gov (United States)

Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J.

2018-01-01

We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin-injection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

Spin-injection into epitaxial graphene on silicon carbide

Science.gov (United States)

Konishi, Keita; Cui, Zhixin; Hiraki, Takahiro; Yoh, Kanji

2013-09-01

We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 Å) and a ferromagnetic Co (600 Å) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement.

Modulation of pure spin currents with a ferromagnetic insulator

Science.gov (United States)

Villamor, Estitxu; Isasa, Miren; Vélez, Saül; Bedoya-Pinto, Amilcar; Vavassori, Paolo; Hueso, Luis E.; Bergeret, F. Sebastián; Casanova, Fèlix

2015-01-01

We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y3F e5O12 (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the nonlocal resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the solution of the spin-diffusion equation. These results open a path towards the development of spin logics.

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

Science.gov (United States)

Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

2006-10-01

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

Magnetoresistance effect of heat generation in a single-molecular spin-valve

International Nuclear Information System (INIS)

Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

2016-01-01

Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily. - Highlights: • Spin-valve effect of heat generation happens when Coulomb repulsion in quantum dot is less than phonon frequency. • When Coulomb repulsion is larger than phonon frequency, inverse spin-valve effect appears and is enlarged with bias increasing. • The variation of spin polarization degree can change heat generation effectively. • The heat magnetoresistance can be modulated from heat-resistance to heat-gain by gate voltage easily.

Intrinsic spin polarized electronic structure of CrO2 epitaxial film revealed by bulk-sensitive spin-resolved photoemission spectroscopy

International Nuclear Information System (INIS)

Fujiwara, Hirokazu; Sunagawa, Masanori; Kittaka, Tomoko; Terashima, Kensei; Wakita, Takanori; Muraoka, Yuji; Yokoya, Takayoshi

2015-01-01

We have performed bulk-sensitive spin-resolved photoemission spectroscopy in order to clarify the intrinsic spin-resolved electronic states of half-metallic ferromagnet CrO 2 . We used CrO 2 epitaxial films on TiO 2 (100), which shows a peak at 1 eV with a clear Fermi edge, consistent with the bulk-sensitive PES spectrum for CrO 2 . In spin-resolved spectra at 40 K, while the Fermi edge was observed in the spin up (majority spin) state, no states at the Fermi level (E F ) with an energy gap of 0.5 eV below E F were observed in the spin down (minority spin) state. At 300 K, the gap in the spin down state closes. These results are consistent with resistivity measurements and magnetic hysteresis curves of the fabricated CrO 2 film, constituting spectroscopic evidence for the half-metallicity of CrO 2 at low temperature and reducing the spin polarization at room temperature. We also discuss the electron correlation effects of Cr 3d

Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3 thin films via field-assisted oxygen vacancy modulation

Science.gov (United States)

Wong, Hon Fai; Ng, Sheung Mei; Cheng, Wang Fai; Liu, Yukuai; Chen, Xinxin; von Nordheim, Danny; Mak, Chee Leung; Dai, Jiyan; Ploss, Bernd; Leung, Chi Wah

2017-12-01

We investigated the tunability of the transport and magnetic properties in 7.5 nm La0.7Sr0.3MnO3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TC of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TC by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

Giant Magneto-Resistance in Epitaxial (La_0.7Sr_0.3MnO₃)_0.5: (ZnO)_0.5 Nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Pan, Wei [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Jiang, Y. X. [Georgia Inst. of Technology, Atlanta, GA (United States); Ihlefeld, Jon [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lu, Ping [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lee, Stephen R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2015-12-01

A great deal of research has been carried out in oxide material systems. Among them, ZnO and La_0.7Sr_0.3MnO₃ (LSMO) are of particular interest due to their superb optical properties and colossal magneto-resistive effect. Here, we report our recent results of magneto-transport studies in self-assembled, epitaxial (ZnO)0.5:(La_0.7Sr_0.3MnO₃)_0.5 nanocomposite films.

Spin-state responses to light impurity substitution in low-spin perovskite LaCoO3

Science.gov (United States)

Tomiyasu, Keisuke; Kubota, Yuuki; Shimomura, Saya; Onodera, Mitsugi; Koyama, Syun-Ichi; Nojima, Tsutomu; Ishihara, Sumio; Nakao, Hironori; Murakami, Youichi

2013-06-01

We studied the spin-state responses to light impurity substitution in low-spin perovskite LaCoO3 (Co3+: d6) through magnetization, x-ray fluorescence, and electrical resistivity measurements of single-crystal LaCo0.99M0.01O3 (M = Cr, Mn, Fe, Ni). In the magnetization curves measured at 1.8 K, a change in the spin-state was not observed for Cr, Mn, or Fe substitution but was observed for Ni substitution. Strong magnetic anisotropy was also found in the Ni-substituted sample. The fluorescence measurements revealed that the valences were roughly estimated to be Cr3+, Mn(4-δ)+, Fe(3+δ')+, and Ni3+. From the observed chemical trends, we propose that the chemical potential is a key factor in inducing the change of the low-spin state. By expanding a model of the ferromagnetic spin-state heptamer generated by hole doping [Podlesnyak , Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.101.247603 101, 247603 (2008)], the emergence of highly anisotropic spin-state molecular ferromagnets induced by low-spin Ni3+ with Jahn-Teller activity is suggested. We also discuss applicability of the present results to other materials with Fe (d6).

Effect of the interface resistance in non-local Hanle measurements

International Nuclear Information System (INIS)

Villamor, Estitxu; Hueso, Luis E.; Casanova, Fèlix

2015-01-01

We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport, taking into account the influence of the interface resistance, is used to fit our results. Whereas the fitted spin-diffusion length value is in agreement with the one obtained from standard non-local measurements in the case of a finite interface resistance, in the case of transparent contacts a clear disagreement is observed. The use of a corrected expression, recently proposed to account for the anisotropy of the spin absorption at the ferromagnetic electrodes, still yields a deviation of the fitted spin-diffusion length which increases for shorter channel distances. This deviation shows how sensitive the non-local Hanle fittings are, evidencing the complexity of obtaining spin transport information from such type of measurements

Characterization of the magnetic anisotropy in thin films of La1-xSrxMnO3 using the planar Hall effect

International Nuclear Information System (INIS)

Bason, Y.; Klein, L.; Yau, J.B.; Hong, X.; Ahn, C.H.

2004-01-01

Thin films of the colossal magnetoresistance material La 1-x Sr x MnO 3 (LSMO) grown on SrTiO 3 substrates exhibit bi-axial magnetocrystalline anisotropy with easy axes along the [110] and [1 anti 1 0] directions. We have recently discovered that the intrinsic biaxial magnetic anisotropy combined with a giant planar Hall effect lead to striking switching behavior in the transverse resistivity of LSMO films (Appl. Phys. Lett. 84, 2593 (2004)). Here we use this phenomenon as a sensitive tool for measuring in-plane magnetization in order to characterize the magnetic anisotropy. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Thermoelectric performance of spin Seebeck effect in Fe3O4/Pt-based thin film heterostructures

Directory of Open Access Journals (Sweden)

R. Ramos

2016-10-01

Full Text Available We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output power. We found that the spin Seebeck multilayers can overcome this limitation since the multilayers exhibit the enhancement of the thermoelectric voltage and the reduction of the internal resistance simultaneously, therefore resulting in significant power enhancement. This result demonstrates that the multilayer structures are useful for improving the thermoelectric performance of the spin Seebeck effect.

Spin currents in metallic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz Dominik

2011-09-05

A pure spin current, i.e., a flow of angular momentum without accompanying net charge current, is a key ingredient in the field of spintronics. In this thesis, we experimentally investigated two different concepts for pure spin current sources suggested by theory. The first is based on a time-dependent magnetization precession which ''pumps'' a pure spin current into an adjacent non-magnetic conductor. Our experiments quantitatively corroborated important predictions expected theoretically for this approach, including the dependence of the spin current on the sample geometry and the microwave power. Even more important, we could show for the first time that the spin pumping concept is viable in a large variety of ferromagnetic materials and that it only depends on the magnetization damping. Therefore, our experiments established spin pumping as generic phenomenon and demonstrated that it is a powerful way to generate pure spin currents. The second theoretical concept is based on the conversion of charge currents into spin currents in non-magnetic nanostructures via the spin Hall effect. We experimentally investigated this approach in H-shaped, metallic nanodevices, and found that the predictions are linked to requirements not realizable with the present experimental techniques, neither in sample fabrication nor in measurement technique. Indeed, our experimental data could be consistently understood by a spin-independent transport model describing the transition from diffusive to ballistic transport. In addition, the implementation of advanced fabrication and measurement techniques allowed to discover a new non-local phenomenon, the non-local anisotropic magnetoresistance. Finally, we also studied spin-polarized supercurrents carried by spin-triplet Cooper pairs. We found that low resistance interfaces are a key requirement for further experiments in this direction. (orig.)

PREFACE: Spin Electronics

Science.gov (United States)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

Symmetry-Dependent Spin Transport Properties and Spin-Filter Effects in Zigzag-Edged Germanene Nanoribbons

Directory of Open Access Journals (Sweden)

Can Cao

2015-01-01

Full Text Available We performed the first-principles calculations to investigate the spin-dependent electronic transport properties of zigzag-edged germanium nanoribbons (ZGeNRs. We choose of ZGeNRs with odd and even widths of 5 and 6, and the symmetry-dependent transport properties have been found, although the σ mirror plane is absent in ZGeNRs. Furthermore, even-N and odd-N ZGeNRs have very different current-voltage relationships. We find that the even 6-ZGeNR shows a dual spin-filter effect in antiparallel (AP magnetism configuration, but the odd 5-ZGeNR behaves as conventional conductors with linear current-voltage dependence. It is found that when the two electrodes are in parallel configuration, the 6-ZGeNR system is in a low resistance state, while it can switch to a much higher resistance state when the electrodes are in AP configuration, and the magnetoresistance of 270% can be observed.

Effects of electric field and magnetic induction on spin injection into organic semiconductors

International Nuclear Information System (INIS)

Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

2011-01-01

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

Giant electroresistance in strained ultrathin La0.67Sr0.33MnO3 films

Science.gov (United States)

Kwak, In Hae; Shakya, Ambika; Paykar, Ashkan; Lacera Otalora, Hector; Biswas, Amlan

We investigated the effect of an electric current on the transport properties of microstructured La0.67Sr0.33MnO3 (LSMO) thin films. Pulsed laser deposition was used to grow atomically smooth thin films of LSMO on singly terminated SrTiO3 (STO) substrates. The microstructure pattern was designed to restrict conduction either in the direction or across the unit cell steps on the atomically smooth surfaces. Previous experiments on these thin films had suggested possible phase separation due to charge ordering near the step edges. We will present evidence that this charge ordered state can be modified by an electric current leading to large electroresistance of upto 95% for a 1 µA current which is comparable to magnetoresistance values at 4 T. Interestingly, the electoresistance was large (about 65 %) even at room temperature when the current was applied along the step directions. Our results suggest possible use of ultrathin LSMO films as resistance switching devices at room temperature. NSF-DMR 1410237.

In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

Science.gov (United States)

Zhang, Jing; Yan, Xi; Han, Furong; Zhang, Jine; Liu, Dan; Shen, Baogen; Sun, Jirong

2018-05-01

The interface engineering of the complex oxides with strongly coupled degrees of freedom opens a wide space for the exploration of novel effects. La0.67Sr0.33MnO3 is one of the most typical complex oxides used for atomic level material engineering. Herein we reported an in-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 (LCO/LSMO) bilayers grown on (110)-oriented LaAlO3 substrates. Fixing the LSMO layer thickness to 8 nm and varying the LCO layer from 0 to 8 nm, totally six bilayers were fabricated. Without the LCO layer, the LSMO film exhibits an easy axis along the [1-10] direction. However, when the thickness of the LCO layer exceeds 1 nm, a signature of spin-reorientation appears; the easy axis turns from the [1-10] to the [001] direction below 225 K. This tendency is continuously enhanced by increasing the LCO. We reveal that lattice strains are different along these two directions. The magnetic anisotropy is not only controlled by lattice strain but also by structural distortion at interface. This work shows the great potential of the interface engineering with differently structured oxides for the exploration of novel functional materials.

Physical Properties of AR-Glass Fibers in Continuous Fiber Spinning Conditions

Energy Technology Data Exchange (ETDEWEB)

Lee, Ji-Sun; Lee, MiJai; Lim, Tae-Young; Lee, Youngjin; Jeon, Dae-Woo; Kim, Jin-Ho [Korea Institute of Ceramic Engineering and Technology, Jinju (Korea, Republic of); Hyun, Soong-Keun [Inha University, Incheon (Korea, Republic of)

2017-04-15

In this study, a glass fiber is fabricated using a continuous spinning process from alkali resistant (AR) glass with 4 wt%zirconia. In order to confirm the melting properties of the marble glass, the raw material is placed into a Pt crucible and melted at 1650 ℃ for 2 h, and then annealed. In order to confirm the transparency of the clear marble glass, the visible transmittance is measured and the fiber spinning condition is investigated by using high temperature viscosity measurements. A change in the diameter is observed according to the winding speed in the range of 100–900 rpm; it is also verified as a function of the fiberizing temperature in the range of 1200–1260 ℃. The optimum winding speed and spinning temperature are 500 rpm and 1240 ℃, respectively. The properties of the prepared spinning fiber are confirmed using optical microscope, tensile strength, modulus, and alkali-resistant tests.

Magnetotransport in Artificial Kagome Spin Ice

Science.gov (United States)

Chern, Gia-Wei

2017-12-01

Magnetic nanoarrays with special geometries exhibit nontrivial collective behaviors similar to those observed in spin-ice materials. Here, we present a circuit model to describe the complex magnetotransport phenomena in artificial kagome spin ice. In this picture, the system can be viewed as a resistor network driven by voltage sources that are located at vertices of the honeycomb array. The differential voltages across different terminals of these sources are related to the ice rules that govern the local magnetization ordering. The circuit model relates the transverse Hall voltage of kagome ice to the underlying spin correlations. Treating the magnetic nanoarray as metamaterials, we present a mesoscopic constitutive equation relating the Hall resistance to magnetization components of the system. We further show that the Hall signal is significantly enhanced when the kagome ice undergoes a magnetic-charge-ordering transition. Our analysis can be readily generalized to other lattice geometries, providing a quantitative method for the design of magnetoresistance devices based on artificial spin ice.

Giant magneto-resistance devices

CERN Document Server

Hirota, Eiichi; Inomata, Koichiro

2002-01-01

This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

Entangled spins and ghost-spins

Directory of Open Access Journals (Sweden)

Dileep P. Jatkar

2017-09-01

Full Text Available We study patterns of quantum entanglement in systems of spins and ghost-spins regarding them as simple quantum mechanical toy models for theories containing negative norm states. We define a single ghost-spin as in [20] as a 2-state spin variable with an indefinite inner product in the state space. We find that whenever the spin sector is disentangled from the ghost-spin sector (both of which could be entangled within themselves, the reduced density matrix obtained by tracing over all the ghost-spins gives rise to positive entanglement entropy for positive norm states, while negative norm states have an entanglement entropy with a negative real part and a constant imaginary part. However when the spins are entangled with the ghost-spins, there are new entanglement patterns in general. For systems where the number of ghost-spins is even, it is possible to find subsectors of the Hilbert space where positive norm states always lead to positive entanglement entropy after tracing over the ghost-spins. With an odd number of ghost-spins however, we find that there always exist positive norm states with negative real part for entanglement entropy after tracing over the ghost-spins.

Spin transfer torque generated magnetic droplet solitons (invited)

International Nuclear Information System (INIS)

Chung, S.; Mohseni, S. M.; Sani, S. R.; Iacocca, E.; Dumas, R. K.; Pogoryelov, Ye.; Anh Nguyen, T. N.; Muduli, P. K.; Eklund, A.; Hoefer, M.; Åkerman, J.

2014-01-01

We present recent experimental and numerical advancements in the understanding of spin transfer torque generated magnetic droplet solitons. The experimental work focuses on nano-contact spin torque oscillators (NC-STOs) based on orthogonal (pseudo) spin valves where the Co fixed layer has an easy-plane anisotropy, and the [Co/Ni] free layer has a strong perpendicular magnetic anisotropy. The NC-STO resistance and microwave signal generation are measured simultaneously as a function of drive current and applied perpendicular magnetic field. Both exhibit dramatic transitions at a certain current dependent critical field value, where the microwave frequency drops 10 GHz, modulation sidebands appear, and the resistance exhibits a jump, while the magnetoresistance changes sign. We interpret these observations as the nucleation of a magnetic droplet soliton with a large fraction of its magnetization processing with an angle greater than 90°, i.e., around a direction opposite that of the applied field. This interpretation is corroborated by numerical simulations. When the field is further increased, we find that the droplet eventually collapses under the pressure from the Zeeman energy

Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures

Science.gov (United States)

Hui, Ya-Juan; Cheng, Wei-Ming; Zhang, Zhao-Bing; Ji, Hong-Kai; Cheng, Xiao-Min; You, Long; Miao, Xiang-Shui

2016-07-01

Spin Hall magnetoresistance (SMR) has been investigated in Ta/CoFe2O4 nanostructures grown on different substrates. Spin currents in CoFe2O4 films are electrically detected in adjacent Ta layers owing to inverse spin Hall effects. The sign of the magnetic-field-dependent resistivity signal shows different polarities along different axes, showing different spin-dependent electron transports. A cosinelike curve of the angular dependence signal with opposite polarity is observed in two orthogonal magnetization planes, whereas a basic line is observed in another plane, revealing the spin accumulation phenomenon. The roughness of the CoFe2O4 surface tuned by substrate strains is responsible for the extent of spin accumulations and the strength of the SMR signal in the nanostructures.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

Science.gov (United States)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Analysis of differentially expressed genes related to resistance in spinosad- and neonicotinoid-resistant Musca domestica L. (Diptera: Muscidae) strains

DEFF Research Database (Denmark)

Castberg, Dorte Heidi Højland; Kristensen, Michael

2017-01-01

strains differing significantly in their response to insecticides. High differential expression of P450s and genes coding for cuticle protein indicates a combination of factors involved in metabolic neonicotinoid and spinosad resistance. Conclusion Resistance in these strains is apparently not linked...... interesting in terms of neonicotinoid resistance, while cyp4d9 was overexpressed in 791spin compared to spinosad-susceptible strains. GSTs, ESTs and UGTs were mostly overexpressed, but not to the same degree as P450s. We present a comprehensive and comparative picture of gene expression in three housefly......Background The housefly is a global pest that has developed resistance to most insecticides applied against it. Resistance of the spinosad-resistant strain 791spin and the neonicotinoid-resistant 766b strain is believed to be due to metabolism. We investigate differentially expressed genes...

Spin Valve Systems for Angle Sensor Applications

OpenAIRE

Johnson, Andrew

2004-01-01

A contact-less sensor with the ability to measure over a 360° range has been long sought after in the automotive industry. Such a sensor could be realized by utilizing the angle dependence of the Giant Magneto Resistance (GMR) Effect in a special type of magnetic multilayer called a spin valve arranged in a wheatstone bridge circuit [Spo96]. A spin valve consists of two ferromagnetic layers separated by nonmagnetic spacer layer where the magnetization of one of the ferromagnetic layers is pin...

Spin injection, transport, and read/write operation in spin-based MOSFET

International Nuclear Information System (INIS)

Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi

2011-01-01

We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

Effects of nuclear spins on the transport properties of the edge of two-dimensional topological insulators

Science.gov (United States)

Hsu, Chen-Hsuan; Stano, Peter; Klinovaja, Jelena; Loss, Daniel

2018-03-01

The electrons in the edge channels of two-dimensional topological insulators can be described as a helical Tomonaga-Luttinger liquid. They couple to nuclear spins embedded in the host materials through the hyperfine interaction, and are therefore subject to elastic spin-flip backscattering on the nuclear spins. We investigate the nuclear-spin-induced edge resistance due to such backscattering by performing a renormalization-group analysis. Remarkably, the effect of this backscattering mechanism is stronger in a helical edge than in nonhelical channels, which are believed to be present in the trivial regime of InAs/GaSb quantum wells. In a system with sufficiently long edges, the disordered nuclear spins lead to an edge resistance which grows exponentially upon lowering the temperature. On the other hand, electrons from the edge states mediate an anisotropic Ruderman-Kittel-Kasuya-Yosida nuclear spin-spin interaction, which induces a spiral nuclear spin order below the transition temperature. We discuss the features of the spiral order, as well as its experimental signatures. In the ordered phase, we identify two backscattering mechanisms, due to charge impurities and magnons. The backscattering on charge impurities is allowed by the internally generated magnetic field, and leads to an Anderson-type localization of the edge states. The magnon-mediated backscattering results in a power-law resistance, which is suppressed at zero temperature. Overall, we find that in a sufficiently long edge the nuclear spins, whether ordered or not, suppress the edge conductance to zero as the temperature approaches zero.

Spin currents of charged Dirac particles in rotating coordinates

Science.gov (United States)

Dayi, Ö. F.; Yunt, E.

2018-03-01

The semiclassical Boltzmann transport equation of charged, massive fermions in a rotating frame of reference, in the presence of external electromagnetic fields is solved in the relaxation time approach to establish the distribution function up to linear order in the electric field in rotating coordinates, centrifugal force and the derivatives. The spin and spin current densities are calculated by means of this distribution function at zero temperature up to the first order. It is shown that the nonequilibrium part of the distribution function yields the spin Hall effect for fermions constrained to move in a plane perpendicular to the angular velocity and magnetic field. Moreover it yields an analogue of Ohm's law for spin currents whose resistivity depends on the external magnetic field and the angular velocity of the rotating frame. Spin current densities in three-dimensional systems are also established.

Spin incommensurability and two phase competition in cobaltites.

Science.gov (United States)

Phelan, D; Louca, Despina; Kamazawa, K; Lee, S-H; Ancona, S N; Rosenkranz, S; Motome, Y; Hundley, M F; Mitchell, J F; Moritomo, Y

2006-12-08

The perovskite LaCoO3 evolves from a nonmagnetic Mott insulator to a spin cluster ferromagnet (FM) with the substitution of Sr2+ for La3+ in La1-xSrxCoO3. The clusters increase in size and number with x and the charge percolation through the clusters leads to a metallic state. Using elastic neutron scattering on La1-xSrxCoO3 single crystals, we show that an incommensurate spin superstructure coexists with the FM spin clusters. The incommensurability increases continuously with x, with the intensity rising in the insulating phase and dropping in the metallic phase as it directly competes with the commensurate FM, itinerant clusters. The spin incommensurability arises from local order of Co3+-Co4+ clusters but no long-range static or dynamic spin stripes develop. The coexistence and competition of the two magnetic phases explain the residual resistivity at low temperatures in samples with metalliclike transport.

Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

Science.gov (United States)

Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

2016-01-08

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

Exploratory study of the effects of wing-leading-edge modifications on the stall/spin behavior of a light general aviation airplane

Science.gov (United States)

1979-01-01

Configurations with full-span and segmented leading-edge flaps and full-span and segmented leading-edge droop were tested. Studies were conducted with wind-tunnel models, with an outdoor radio-controlled model, and with a full-scale airplane. Results show that wing-leading-edge modifications can produce large effects on stall/spin characteristics, particularly on spin resistance. One outboard wing-leading-edge modification tested significantly improved lateral stability at stall, spin resistance, and developed spin characteristics.

Geometrical spin symmetry and spin

International Nuclear Information System (INIS)

Pestov, I. B.

2011-01-01

Unification of General Theory of Relativity and Quantum Mechanics leads to General Quantum Mechanics which includes into itself spindynamics as a theory of spin phenomena. The key concepts of spindynamics are geometrical spin symmetry and the spin field (space of defining representation of spin symmetry). The essence of spin is the bipolar structure of geometrical spin symmetry induced by the gravitational potential. The bipolar structure provides a natural derivation of the equations of spindynamics. Spindynamics involves all phenomena connected with spin and provides new understanding of the strong interaction.

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2015-03-01

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

Science.gov (United States)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-06-01

We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

A self-consistent spin-diffusion model for micromagnetics

KAUST Repository

Abert, Claas; Ruggeri, Michele; Bruckner, Florian; Vogler, Christoph; Manchon, Aurelien; Praetorius, Dirk; Suess, Dieter

2016-01-01

We propose a three-dimensional micromagnetic model that dynamically solves the Landau-Lifshitz-Gilbert equation coupled to the full spin-diffusion equation. In contrast to previous methods, we solve for the magnetization dynamics and the electric potential in a self-consistent fashion. This treatment allows for an accurate description of magnetization dependent resistance changes. Moreover, the presented algorithm describes both spin accumulation due to smooth magnetization transitions and due to material interfaces as in multilayer structures. The model and its finite-element implementation are validated by current driven motion of a magnetic vortex structure. In a second experiment, the resistivity of a magnetic multilayer structure in dependence of the tilting angle of the magnetization in the different layers is investigated. Both examples show good agreement with reference simulations and experiments respectively.

A self-consistent spin-diffusion model for micromagnetics

KAUST Repository

Abert, Claas

2016-12-17

We propose a three-dimensional micromagnetic model that dynamically solves the Landau-Lifshitz-Gilbert equation coupled to the full spin-diffusion equation. In contrast to previous methods, we solve for the magnetization dynamics and the electric potential in a self-consistent fashion. This treatment allows for an accurate description of magnetization dependent resistance changes. Moreover, the presented algorithm describes both spin accumulation due to smooth magnetization transitions and due to material interfaces as in multilayer structures. The model and its finite-element implementation are validated by current driven motion of a magnetic vortex structure. In a second experiment, the resistivity of a magnetic multilayer structure in dependence of the tilting angle of the magnetization in the different layers is investigated. Both examples show good agreement with reference simulations and experiments respectively.

Steps toward an all-electric spin valve using side-gated quantum point contacts with lateral spin-orbit coupling

Science.gov (United States)

Bhandari, Nikhil; Dutta, Maitreya; Charles, James; Newrock, Richard S.; Cahay, Marc; Herbert, Stephen T.

2013-03-01

Spin-based electronics or ‘spintronics’ has been a topic of interest for over two decades. Electronic devices based on the manipulation of the electron spin are believed to offer the possibility of very small, non-volatile and ultrafast devices with very low power consumption. Since the proposal of a spin-field-effect transistor (SpinFET) by Datta and Das in 1990, many attempts have been made to achieve spin injection, detection and manipulation in semiconductor materials either by incorporating ferromagnetic materials into device architectures or by using external magnetic fields. This approach has significant design complexities, partly due to the influence of stray magnetic fields on device operation. In addition, magnetic electrodes can have magneto-resistance and spurious Hall voltages that can complicate device performance. To date, there has been no successful report of a working Datta-Das SpinFET. Over the last few years we have investigated an all-electric means of manipulating spins, one that only relies on electric fields and voltages and not on ferromagnetic materials or external magnetic fields. We believe we have found a pathway toward this goal, using in-plane side-gated quantum point contacts (QPCs) that rely on lateral spin-orbit coupling to create spin polarization. In this paper we discuss several aspects of our work, beginning with our finding what we believe is nearly complete spin-polarization in InAs QPCs by purely electrical means, our theoretical work to understand the basic mechanisms leading to that situation (asymmetric lateral confinement, lateral spin-orbit coupling and a strong e-e interaction), and our recent work extending the effort to GaAs and to dual QPC systems where one QPC acts as a polarizer and the other as an analyzer. Keynote talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Resonant Spin-Transfer-Torque Nano-Oscillators

Science.gov (United States)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2017-12-01

Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional inductor-based voltage-controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions, which have the disadvantages of low power outputs and poor conversion efficiencies. We theoretically propose using resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present viable device designs geared toward a high microwave output power and an efficient conversion of the dc input power. We attribute these robust qualities to the resulting nontrivial spin-current profiles and the ultrahigh tunnel magnetoresistance, both of which arise from resonant spin filtering. The device designs are based on the nonequilibrium Green's-function spin-transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation and Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around 1150% and an efficiency enhancement of over 1100% compared to typical trilayer designs. We rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. We also demonstrate the robustness of our structures against device design fluctuations and elastic dephasing. This work sets the stage for pentalyer spin-transfer-torque nano-oscillator device designs that ameliorate major issues associated with typical trilayer designs.

Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

Science.gov (United States)

Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

2017-11-27

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction

KAUST Repository

Ortiz Pauyac, Christian

2016-06-19

In the present thesis we introduce the reader to the field of spintronics and explore new phenomena, such as spin transfer torques, spin filtering, and three types of spin-orbit torques, Rashba, spin Hall, and spin swapping, which have emerged very recently and are promising candidates for a new generation of memory devices in computer technology. A general overview of these phenomena is presented in Chap. 1. In Chap. 2 we study spin transfer torques in tunnel junctions in the presence of spin filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives are summarized in Chap. 5.

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

Science.gov (United States)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

Spin Torque Oscillator for High Performance Magnetic Memory

Directory of Open Access Journals (Sweden)

Rachid Sbiaa

2015-06-01

Full Text Available A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO, and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in  the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.

Spin fluctuation and small polaron conduction dominated electrical ...

Indian Academy of Sciences (India)

Administrator

temperature regime (20 K < T < 53 K), shows a minima near 53 K and increases with T ... Manganite nanoparticles; resistivity; spin fluctuation; electron–phonon interaction; electron– ... the low-doped regime because of the series of structural,.

Tunneling between edge states in a quantum spin Hall system.

Science.gov (United States)

Ström, Anders; Johannesson, Henrik

2009-03-06

We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

Spin-polarized spin excitation spectroscopy

International Nuclear Information System (INIS)

Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

2010-01-01

We report on the spin dependence of elastic and inelastic electron tunneling through transition metal atoms. Mn, Fe and Cu atoms were deposited onto a monolayer of Cu 2 N on Cu(100) and individually addressed with the probe tip of a scanning tunneling microscope. Electrons tunneling between the tip and the substrate exchange energy and spin angular momentum with the surface-bound magnetic atoms. The conservation of energy during the tunneling process results in a distinct onset threshold voltage above which the tunneling electrons create spin excitations in the Mn and Fe atoms. Here we show that the additional conservation of spin angular momentum leads to different cross-sections for spin excitations depending on the relative alignment of the surface spin and the spin of the tunneling electron. For this purpose, we developed a technique for measuring the same local spin with a spin-polarized and a non-spin-polarized tip by exchanging the last apex atom of the probe tip between different transition metal atoms. We derive a quantitative model describing the observed excitation cross-sections on the basis of an exchange scattering process.

Spin glasses

International Nuclear Information System (INIS)

Mookerjee, Abhijit

1976-01-01

''Spin glasses'', are entire class of magnetic alloys of moderate dilution, in which the magnetic atoms are far enough apart to be unlike the pure metal, but close enough so that the indirect exchange energy between them (mediated by the s-d interaction between local moments and conduction electrons) dominates all other energies. Characteristic critical phenomena displayed such as freezing of spin orientation at 'Tsub(c)' and spreading of magnetic ordering, are pointed out. Anomalous behaviour, associated with these critical phenomena, as reflected in : (i) Moessbauer spectroscopy giving hyperfine splitting at Tsub(c), (ii) maxima in susceptibility and remanent magnetism, (iii) thermopower maxima and change in slope, (iv) Characteristic cusp in susceptibility and its removal by very small magnetic fields, and (v) conductivity-resistivity measurements, are discussed. Theoretical developments aimed at explaining these phenomena, in particular, the ideas from percolation and localisation theories, and the approach based on the gellations of polymers, are discussed. Finally, a new approach based on renormalisation group in disordered systems is also briefly mentioned. (K.B.)

Properties Of Viscose Vortex Yarns Depending On Technological Parameters Of Spinning

Directory of Open Access Journals (Sweden)

Moučková Eva

2015-06-01

Full Text Available This paper analyzes the relationship between technological parameters of spinning of 100% CV Vortex yarns of different counts and its selected geometrical parameters (a lead of helix of wrapping fibre ribbon, yarn diameter as well as yarn properties. The number of twist of wrapping fibre layer is determined. The effect of the yarn delivery speed, hollow spindle diameter, and the main draft on the hairiness, mass irregularity, tenacity, elongation, resistance to abrasion and bending rigidity of Vortex yarn is observed. The yarn properties are compared with the properties of open-end rotor spun yarns. Slivers of the same spinning lot were used for the production of both kinds of yarn. The results showed that the delivery speed in combination with spindle diameter affects yarn diameter, hairiness and abrasion resistance. Mass irregularity and imperfections of yarn is mainly affected by the main draft of drafting unit. Technological parameters of spinning do not affect the level of bending rigidity of the Vortex yarn. Tested rotor spun yarns had a larger diameter, higher hairiness, lower tenacity and higher elongation, lower mass irregularity and number of imperfections, higher abrasion resistance and lower bending rigidity compared to tested Vortex spun yarns.

Piezoresistivity in films of nanocrystalline manganites.

Science.gov (United States)

Sarkar, Jayanta; Raychaudhuri, A K

2007-06-01

Rare earth manganites having perovskite structure are susceptible to lattice strain. So far most investigations have been done with hydrostatic pressure or biaxial strain. We have observed that hole doped rare-earth manganites, which are known to display colossal magnetoresistance (CMR) also show change in its resistance under the influence of uniaxial strain. We report the direct measurement of piezoresistive response of La0.67Ca0.33MnO3 (LCMO) and La0.67Sr0.33MnO3 (LSMO) of this manganite family. The measurements were carried out on nanostructured polycrystalline films of LCMO and LSMO grown on oxidized Si(100) substrates. The piezoresistance was measured by bending the Si cantilevers (on which the film is grown) in flexural mode both with compressive and tensile strain. At room temperature the gauge factor approximately 10-20 and it increases to a large value near metal-insulator transition temperature (Tp) where the resistivity shows a peak.

Spin current and spin transfer torque in ferromagnet/superconductor spin valves

Science.gov (United States)

Moen, Evan; Valls, Oriol T.

2018-05-01

Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Spin-dependent transport through interacting graphene armchair nanoribbons

International Nuclear Information System (INIS)

Koller, Sonja; Mayrhofer, Leonhard; Grifoni, Milena

2010-01-01

We investigate spin effects in transport across fully interacting, finite-size graphene armchair nanoribbons (ACNs) contacted to collinearly spin-polarized leads. In such systems, the presence of short-range Coulomb interaction between bulk states and states localized at the ribbon ends leads to novel spin-dependent phenomena. Specifically, the total spin of the low-energy many-body states is conserved during tunneling but that of the bulk and end states is not. As a consequence, in the single-electron regime, dominated by Coulomb blockade phenomena, we find pronounced negative differential conductance features for ACNs contacted to parallel polarized leads. These features are, however, absent in an anti-parallel contact configuration, which in turn leads, within a certain gate and bias voltage region, to a negative tunneling magneto-resistance. Moreover, we analyze the changes in the transport characteristics under the influence of an external magnetic field.

Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers

International Nuclear Information System (INIS)

Rostami, Habib; Moghaddam, Ali G; Asgari, Reza

2016-01-01

We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenide monolayers. We show that momentum and spin relaxation times, due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin-split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature T K on the doping is not strongly affected by the spin–orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and the poor man’s scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to T K , which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials. (paper)

Influence of Al-atoms on the spin fluctuation scattering in R(Co,Al)2 compounds

International Nuclear Information System (INIS)

Duc, N.H.; Hung, D.T.; Kim-Ngan, N.H.; Sechovsky, V.

1992-01-01

The resistivity and magnetisation have been measured for the R(Co 1-x Al x ) 2 compounds with R=Nd, Gd, Tb, Dy, Ho, Er and Lu. For x=0.2 the resistivity enhancement is observed below T c , however, for the compounds with R=Lu-Tb only. The results are discussed in terms of the spin fluctuation scattering and indicate that the enhancement of the spin fluctuation scattering is strongly related to the lattice parameter. (orig.)

Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

Science.gov (United States)

Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

2017-07-01

Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

Spin current evolution in the separated spin-up and spin-down quantum hydrodynamics

International Nuclear Information System (INIS)

Trukhanova, Mariya Iv.

2015-01-01

We have developed a method of quantum hydrodynamics (QHD) that describes particles with spin-up and with spin-down in separate. We have derived the equation of the spin current evolution as a part of the set of the quantum hydrodynamics equations that treat particles with different projection of spin on the preferable direction as two different species. We have studied orthogonal propagation of waves in the external magnetic field and determined the contribution of quantum corrections due to the Bohm potential and to magnetization energy of particles with different projections of spin in the spin-current wave dispersion. We have analyzed the limits of weak and strong magnetic fields. - Highlights: • We derive the spin current equation for particles with different projection of spin. • We predict the contribution of Bohm potential to the dynamics of spin current. • We derive the spin-current wave in the system of spin-polarized particles. • We study the propagation of spin-acoustic wave in magnetized dielectrics.

Muonium spin exchange in spin-polarized media: Spin-flip and -nonflip collisions

International Nuclear Information System (INIS)

Senba, M.

1994-01-01

The transverse relaxation of the muon spin in muonium due to electron spin exchange with a polarized spin-1/2 medium is investigated. Stochastic calculations, which assume that spin exchange is a Poisson process, are carried out for the case where the electron spin polarization of the medium is on the same axis as the applied field. Two precession signals of muonium observed in intermediate fields (B>30 G) are shown to have different relaxation rates which depend on the polarization of the medium. Furthermore, the precession frequencies are shifted by an amount which depends on the spin-nonflip rate. From the two relaxation rates and the frequency shift in intermediate fields, one can determine (i) the encounter rate of muonium and the paramagnetic species, (ii) the polarization of the medium, and most importantly (iii) the quantum-mechanical phase shift (and its sign) associated with the potential energy difference between electron singlet and triplet encounters. Effects of spin-nonflip collisions on spin dynamics are discussed for non-Poisson as well as Poisson processes. In unpolarized media, the time evolution of the muon spin in muonium is not influenced by spin-nonflip collisions, if the collision process is Poissonian. This seemingly obvious statement is not true anymore in non-Poissonian processes, i.e., it is necessary to specify both spin-flip and spin-nonflip rates to fully characterize spin dynamics

Neutron spin quantum precession using multilayer spin splitters and a phase-spin echo interferometer

International Nuclear Information System (INIS)

Ebisawa, Toru; Tasaki, Seiji; Kawai, Takeshi; Hino, Masahiro; Akiyoshi, Tsunekazu; Achiwa, Norio; Otake, Yoshie; Funahashi, Haruhiko.

1996-01-01

Neutron spin quantum precession by multilayer spin splitter has been demonstrated using a new spin interferometer. The multilayer spin splitter consists of a magnetic multilayer mirror on top, followed by a gap layer and a non magnetic multilayer mirror which are evaporated on a silicon substrate. Using the multilayer spin splitter, a polarized neutron wave in a magnetic field perpendicular to the polarization is split into two spin eigenstates with a phase shift in the direction of the magnetic field. The spin quantum precession is equal to the phase shift, which depends on the effective thickness of the gap layer. The demonstration experiments verify the multilayer spin splitter as a neutron spin precession device as well as the coherent superposition principle of the two spin eigenstates. We have developed a new phase-spin echo interferometer using the multilayer spin splitters. We present successful performance tests of the multilayer spin splitter and the phase-spin echo interferometer. (author)

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan; Wu, Jun; Li, Peng; Zhang, Qiang; Zhao, Yuelei; Manchon, Aurelien; Xiao, John Q.; Zhang, Xixiang

2017-01-01

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan

2017-03-07

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Spin drift and spin diffusion currents in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

2008-09-15

On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Spin drift and spin diffusion currents in semiconductors

Directory of Open Access Journals (Sweden)

M Idrish Miah

2008-01-01

Full Text Available On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Spin drift and spin diffusion currents in semiconductors

International Nuclear Information System (INIS)

Idrish Miah, M

2008-01-01

On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Structural and electrical characterization of (BaTiO3)x(La0.67Sr0.33MnO3)1-x ceramic composites

International Nuclear Information System (INIS)

Gaffoor, Abdul; Ravinder, D.; Joshi, U.S.; Mistry, B.V.; Joshi, Nikhail G.; Chayya, U.V.; Gadhvi, M.R.

2012-01-01

Multiferroic materials with the coexistence of at least two ferroic orders (ferroelectric, (anti-)ferromagnetic, and ferroelastic) have recently drawn ever-increasing interest due to their potential for applications as multifunctional devices. Among them, the coexistence of ferroelectricity and ferromagnetism is highly desired. But only their coexistence is not enough; of most important is to require a strong coupling interaction between two ferroic orders. Ceramic composite of well known ferromagnetic metallic manganite La 0.67 Sr 0.33 MnO 3 (LSMO) is systematically substituted by ferroelectric oxide BaTiO 3 (BTO). Samples with generic formula (BTO) x (LSMO) 1-x (x = 0.0 to 1.0, in step of 0.2) were synthesized by standard double sintering method. XRD show major perovskite LSMO phase upto x=0.6. However mixed phases were detected for almost all the x value except end points. Temperature dependent DC resistivity exhibit systematic metallic to insulator transformation with increasing x. Frequency dependent dielectric constants show a linear decrease over 10 MHz, whereas the loss tangent found to increase abnormally with frequency, with increasing x. Electric field dependent polarization show a broad hysteresis for x e' 0.6. (author)

Spin Polarization Oscillations without Spin Precession: Spin-Orbit Entangled Resonances in Quasi-One-Dimensional Spin Transport

Directory of Open Access Journals (Sweden)

D. H. Berman

2014-03-01

Full Text Available Resonant behavior involving spin-orbit entangled states occurs for spin transport along a narrow channel defined in a two-dimensional electron gas, including an apparent rapid relaxation of the spin polarization for special values of the channel width and applied magnetic field (so-called ballistic spin resonance. A fully quantum-mechanical theory for transport using multiple subbands of the one-dimensional system provides the dependence of the spin density on the applied magnetic field and channel width and position along the channel. We show how the spatially nonoscillating part of the spin density vanishes when the Zeeman energy matches the subband energy splittings. The resonance phenomenon persists in the presence of disorder.

Effect of spin rotation coupling on spin transport

International Nuclear Information System (INIS)

Chowdhury, Debashree; Basu, B.

2013-01-01

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k → ⋅p → perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k → ⋅p → framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied

Effect of spin rotation coupling on spin transport

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2013-12-15

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k{sup →}⋅p{sup →} perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k{sup →}⋅p{sup →} framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied.

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

Science.gov (United States)

Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates

International Nuclear Information System (INIS)

Zhang Hongdi; An Yukai; Mai Zhenhong; Lu Huibin; Zhao Kun; Pan Guoqiang; Li Ruipeng; Fan Rong

2008-01-01

The thickness dependence of microstructures of La 0.9 Sr 0.1 MnO 3 (LSMO) thin films grown on exact-cut and miscut SrTiO 3 (STO) substrates, respectively, was investigated by high-angle X-ray diffraction (HXRD), X-ray small-angle reflection (XSAR), X-ray reciprocal space mapping and atomic force microscopy (AFM). Results show that the LSMO films are in pseudocubic structure and are highly epitaxial [0 0 1]-oriented growth on the (0 0 1) STO substrates. The crystalline quality of the LSMO film is improved with thickness. The epitaxial relationship between the LSMO films and the STO substrates is [0 0 1] LSMO -parallel [0 0 1] EXACT-STO , and the LSMO films have a slight mosaic structure along the q x direction for the samples grown on the exact-cut STO substrates. However, an oriented angle of about 0.24 deg. exists between [0 0 1] LSMO and [0 0 1] MISCUT-STO , and the LSMO films have a mosaic structure along the q z direction for that grown on the miscut STO substrates. The mosaic structure of both groups of the samples tends to reduce with thickness. The diffraction intensity of the (0 0 4) peaks increases with thickness of the LSMO film. The XSAR and AFM observations show that for both groups, the interface is sharp and the surface is rather smooth. The mechanism was discussed briefly

Spin-transport-phenomena in metals, semiconductors, and insulators

Energy Technology Data Exchange (ETDEWEB)

Althammer, Matthias Klaus

2012-07-19

Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

Science.gov (United States)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Interlayer quality dependent graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Ramay, Shahid Mahmood [Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

2017-01-15

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Interlayer quality dependent graphene spin valve

International Nuclear Information System (INIS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid Mahmood

2017-01-01

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

The slave-fermion approach of spin fluctuations in ferromagnet metals

Science.gov (United States)

Hu, C. D.

2015-11-01

In this work we propose a method to treat the spin fluctuations in itinerant ferromagnets. It is able to do calculation with a convergent series. The slave fermion method is applied to separate the charge (denoted by fermions) and spin (denoted by bosons) degrees of freedom. The spin operators are then replaced by the Schwinger boson fields. This way, the interaction term in the model can be reduced to a very simple form and can be teated without difficulty. Finally the equations of motion are derived in order to obtain the forms of Green's functions of fermions and bosons. The result is applied to the calculation of resistivity as a function temperature.

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

Science.gov (United States)

Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

2016-12-01

We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

Electrical spin injection and detection in silicon nanowires with axial doping gradient.

Science.gov (United States)

Kountouriotis, Konstantinos; Barreda, Jorge L; Keiper, Timothy David; Zhang, Mei; Xiong, Peng

2018-06-13

The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nano-spintronic devices with quasi-1D semiconductor channels.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.

2017-12-08

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

2017-01-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin-orbit and spin-lattice coupling

International Nuclear Information System (INIS)

Bauer, Gerrit E.W.; Ziman, Timothy; Mori, Michiyasu

2014-01-01

We pursued theoretical research on the coupling of electron spins in the condensed matter to the lattice as mediated by the spin-orbit interaction with special focus on the spin and anomalous Hall effects. (author)

Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

International Nuclear Information System (INIS)

Mishra, Amita; Dutta, Anirban; Samaddar, Sayanti; Gupta, Anjan K.

2013-01-01

We report the wet chemical deposition of single crystalline epitaxial thin films of the colossal magneto-resistive manganite La 0.67 Sr 0.33 MnO 3 on the lattice-matched (001)-face of a La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 substrate. Topographic images of these films taken with a scanning tunneling microscope show atomically flat terraces separated by steps of monatomic height. The resistivity of these films shows an insulator-metal transition at 310 K, nearly coincident with the Curie temperature of 340 K, found from magnetization measurements. The films show a magnetoresistance of 7% at 300 K and 1.2 T. Their saturation magnetization value at low temperatures is consistent with that of the bulk. - Highlights: ► Wet chemical deposition of La 0.67 Sr 0.33 MnO 3 (LSMO) on a lattice-matched substrate. ► Single crystalline epitaxial LSMO films obtained. ► Flat terraces separated by monatomic steps observed by scanning tunneling microscope

Spin rotation after a spin-independent scattering. Spin properties of an electron gas in a solid

International Nuclear Information System (INIS)

Zayets, V.

2014-01-01

It is shown that spin direction of an electron may not be conserved after a spin-independent scattering. The spin rotations occur due to a quantum-mechanical fact that when a quantum state is occupied by two electrons of opposite spins, the total spin of the state is zero and the spin direction of each electron cannot be determined. It is shown that it is possible to divide all conduction electrons into two group distinguished by their time-reversal symmetry. In the first group the electron spins are all directed in one direction. In the second group there are electrons of all spin directions. The number of electrons in each group is conserved after a spin-independent scattering. This makes it convenient to use these groups for the description of the magnetic properties of conduction electrons. The energy distribution of spins, the Pauli paramagnetism and the spin distribution in the ferromagnetic metals are described within the presented model. The effects of spin torque and spin-torque current are described. The origin of spin-transfer torque is explained within the presented model

Spin injection and spin accumulation in all-metal mesoscopic spin valves

NARCIS (Netherlands)

Jedema, FJ; Nijboer, MS; Filip, AT; van Wees, BJ

2003-01-01

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic-metal-nonmagnetic-metal-ferromagnetic-metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, Permalloy (Py), cobalt (Co), and nickel (Ni), are used as electrical spin

The susceptibilities in the spin-S Ising model

International Nuclear Information System (INIS)

Ainane, A.; Saber, M.

1995-08-01

The susceptibilities of the spin-S Ising model are evaluated using the effective field theory introduced by Tucker et al. for studying general spin-S Ising model. The susceptibilities are studied for all spin values from S = 1/2 to S = 5/2. (author). 12 refs, 4 figs

Control of electron spin decoherence in nuclear spin baths

Science.gov (United States)

Liu, Ren-Bao

2011-03-01

Nuclear spin baths are a main mechanism of decoherence of spin qubits in solid-state systems, such as quantum dots and nitrogen-vacancy (NV) centers of diamond. The decoherence results from entanglement between the electron and nuclear spins, established by quantum evolution of the bath conditioned on the electron spin state. When the electron spin is flipped, the conditional bath evolution is manipulated. Such manipulation of bath through control of the electron spin not only leads to preservation of the center spin coherence but also demonstrates quantum nature of the bath. In an NV center system, the electron spin effectively interacts with hundreds of 13 C nuclear spins. Under repeated flip control (dynamical decoupling), the electron spin coherence can be preserved for a long time (> 1 ms) . Thereforesomecharacteristicoscillations , duetocouplingtoabonded 13 C nuclear spin pair (a dimer), are imprinted on the electron spin coherence profile, which are very sensitive to the position and orientation of the dimer. With such finger-print oscillations, a dimer can be uniquely identified. Thus, we propose magnetometry with single-nucleus sensitivity and atomic resolution, using NV center spin coherence to identify single molecules. Through the center spin coherence, we could also explore the many-body physics in an interacting spin bath. The information of elementary excitations and many-body correlations can be extracted from the center spin coherence under many-pulse dynamical decoupling control. Another application of the preserved spin coherence is identifying quantumness of a spin bath through the back-action of the electron spin to the bath. We show that the multiple transition of an NV center in a nuclear spin bath can have longer coherence time than the single transition does, when the classical noises due to inhomogeneous broadening is removed by spin echo. This counter-intuitive result unambiguously demonstrates the quantumness of the nuclear spin bath

Interconnected magnetic tunnel junctions for spin-logic applications

Science.gov (United States)

Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

2018-05-01

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

Magnetocaloric effect in quantum spin-s chains

Directory of Open Access Journals (Sweden)

A. Honecker

2009-01-01

Full Text Available We compute the entropy of antiferromagnetic quantum spin-s chains in an external magnetic field using exact diagonalization and Quantum Monte Carlo simulations. The magnetocaloric effect, i. e., temperature variations during adiabatic field changes, can be derived from the isentropes. First, we focus on the example of the spin-s=1 chain and show that one can cool by closing the Haldane gap with a magnetic field. We then move to quantum spin-s chains and demonstrate linear scaling with s close to the saturation field. In passing, we propose a new method to compute many low-lying excited states using the Lanczos recursion.

Graphene spin diode: Strain-modulated spin rectification

Energy Technology Data Exchange (ETDEWEB)

Wang, Yunhua; Wang, B., E-mail: stslyl@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn [Sino-French Institute of Nuclear Engineering and Technology, School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Yulan, E-mail: stslyl@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn [School of Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2014-08-04

Strain effects on spin transport in a ferromagnetic/strained/normal graphene junction are explored theoretically. It is shown that the spin-resolved Fermi energy range can be controlled by the armchair direction strain because the strain-induced pseudomagnetic field suppresses the current. The spin rectification effect for the bias reversal occurs because of a combination of ferromagnetic exchange splitting and the broken spatial symmetry of the junction. In addition, the spin rectification performance can be tuned remarkably by manipulation of the strains. In view of this strain-modulated spin rectification effect, we propose that the graphene-based ferromagnetic/strained/normal junction can be used as a tunable spin diode.

Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction

KAUST Repository

Ortiz Pauyac, Christian

2016-01-01

filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives

Leading research report for fiscal 1999. Fundamental technology of spin electronic device; 1999 nendo spin toronikusu soshi kiban gijutsu kenkyu hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

The project, with attention paid to both spin and charge of electrons, aims to draw the best of the said two attributes of electrons by use of the state of the art in manufacturing technology for the creation of novel electronic devices. The nonvolatile MRAM (magnetic random access memory), which is the nearest to commercialization, is a tunnel device consisting of two sheet-shape ferromagnetic metal electrodes and an insulator film sandwiched between the said two electrodes, with the lower electrode magnetized only in one direction. The tunnel resistance changes when the magnetization direction in the upper electrode changes left and right (1, 0) according to an external writing magnetic field, and this enables nondestructive readout. The upper electrode magnetization direction remains unchanged thanks to hysteresis when the external writing magnetic field is turned off, and this allows the device to serve as a nonvolatile memory device. The device has a potential for higher speeds and enhanced integration. Much is also expected from a spin conduction functional device utilizing spin-dependent electric conduction, spin optical function device, spin quantum calculation directly utilizing quantum state, magnetic field sensor, etc. Their importance is great economically and socially, and technologies relating to magnetism and semiconductor should be merged for their further development. (NEDO)

Drones, quasi-spin or iso-spin. A comparison of many-body techniques for general spin

International Nuclear Information System (INIS)

McKenzie, B.J.; Stedman, G.E.

1976-01-01

For an effective-spin system with 2S + 1 levels there are a number of possible mappings of spin onto pseudo-fermion operators. The relative merits of three of these methods are investigated by calculating to second order the dispersion relation for coupled spin-phonon modes in crystals containing S = 1 effective spin impurities. It is found that the drone formalism quickly becomes intractable at higher spin values, as does the related quasi-spin formalism developed in contrast with the iso-spin (or Abrinkosov projection) formalism. (author)

Spin-current emission governed by nonlinear spin dynamics.

Science.gov (United States)

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-10-16

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Injection and detection of a spin-polarized current in a light-emitting diode

Science.gov (United States)

Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

1999-12-01

The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

Spin nematics next to spin singlets

Science.gov (United States)

Yokoyama, Yuto; Hotta, Chisa

2018-05-01

We provide a route to generate nematic order in a spin-1/2 system. Unlike the well-known magnon-binding mechanism, our spin nematics requires neither the frustration effect nor spin polarization in a high field or in the vicinity of a ferromagnet, but instead appears next to the spin singlet phase. We start from a state consisting of a quantum spin-1/2 singlet dimer placed on each site of a triangular lattice, and show that interdimer ring exchange interactions efficiently dope the SU(2) triplets that itinerate and interact, easily driving a stable singlet state to either Bose-Einstein condensates or a triplet crystal, some hosting a spin nematic order. A variety of roles the ring exchange serves includes the generation of a bilinear-biquadratic interaction between nearby triplets, which is responsible for the emergent nematic order separated from the singlet phase by a first-order transition.

Magnon contribution to electrical resistance of gadolinium-dysprosium alloy single crystals

International Nuclear Information System (INIS)

Nikitin, S.A.; Slobodchikov, S.S.; Solomkin, I.K.

1978-01-01

The magnon, phonon and interelectron collision contributions to the electric resistance of single crystals of gadolinium-dysprosium alloys were quantified. A relationship was found to exist between the electric resistance and the variation of the topology of the Fermi surface on melting of gadolinium with dysprosium. It was found that gadolinium-dysprosium alloys, which have no helicoidal magnetic structure in magnetically ordered state, feature a spin-spin helicoidal-type correlations in the paramagnetic field

Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons

International Nuclear Information System (INIS)

Li, Xin-Mei; Long, Meng-Qiu; Cui, Li-Ling; Xiao, Jin; Zhang, Xiao-Jiao; Zhang, Dan; Xu, Hui

2014-01-01

Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS 2 ) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS 2 nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena. - Highlights: • The spin-dependent electronic transport of zigzag MoS 2 nanoribbons. • The effects of V-shaped edge defect and H-saturation. • The effects of spin-filter and negative differential resistance can be observed

Towards sub-200 nm nano-structuring of linear giant magneto-resistive spin valves by a direct focused ion beam milling process

International Nuclear Information System (INIS)

Riedmüller, Benjamin; Huber, Felix; Herr, Ulrich

2014-01-01

In this work, we present a detailed investigation of a focused ion beam (FIB) assisted nano-structuring process for giant magneto-resistive (GMR) spin valve sensors. We have performed a quantitative study of the dependence of the GMR ratio as well as the sensor resistance on the ion dose, which is implanted in the active region of our sensors. These findings are correlated with the decrease of magneto-resistive properties after micro- and nano-structuring by the FIB and reveal the importance of ion damage which limits the applicability of FIB milling to GMR devices in the low μm range. Deposition of a protective layer (50 nm SiO 2 ) on top of the sensor structure before milling leads to a preservation of the magneto-resistive properties after the milling procedure down to sensor dimensions of ∼300 nm. The reduction of the sensor dimensions to the nanometer regime is accompanied by a shift of the GMR curves, and a modification of the saturation behavior. Both effects can be explained by a micromagnetic model including the magnetic interaction of free and pinned layer as well as the effect of the demagnetizing field of the free layer on the sensor behavior. The results demonstrate that the FIB technology can be successfully used to prepare spintronic nanostructures

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

La{sub 0,7}Sr{sub 0,3}MnO{sub 3} thin layers on SrTiO{sub 3}(001) substrate. Structure and Mn valence; La{sub 0,7}Sr{sub 0,3}MnO{sub 3}-Duennschichten auf SrTiO{sub 3}(001)-Substrat. Struktur und Mn-Wertigkeit

Energy Technology Data Exchange (ETDEWEB)

Riedl, Thomas

2007-07-01

This thesis presents a highly spatially resolved characterization of crystal structure and Mn valence by pictures drawn in the TEM and electron-energy-loss ionization edges. The Mn valence determined for the internal od the studied LSMO layers agrees with the nomial value of 3.3, while on some LSMO/STO interfaces between substrate and layers as well as between multilayers a reduction by 0.1..0.2 is to be observed. Furthermore the influence of the interface manifests in the occurence of a shoulder on the side of lower energy loss of the Mn L3 edge. The geometrical phase analysis of HRTEM pictures and TEM bright-field pictures prove a tetragonal strain of th LSMO layer crystals, which consist of needle-shaped twin domains. From highly resolved scanning TEM pictures by electrons scattered under large angle results that the LSMO/STO interface exhibit a coherent lattice structure accidentally provided with elementary-cell stages. Especially the stages (single- or multi-stages) mediate the wavy structure of the LSMO/STO interlayers. Finally it is shown that at low thicknes of the TEM lamella the expected crystal-plane inclination exceeds the expected crystal-plane inclination of the twins. [German] Diese Arbeit stellt eine hoch ortsaufgeloeste Charakterisierung von Kristallstruktur und Mn-Wertigkeit mit im TEM aufgezeichneten Abbildungen und Elektronen-Energieverlust-Ionisationskanten vor. Die fuer das Innere der untersuchten LSMO-Schichten ermittelte Mn-Wertigkeit stimmt mit dem nominalen Wert von 3,3 ueberein, wohingegen an manchen LSMO/STO-Grenzflaechen zwischen Substrat und Schicht sowie zwischen den Schichten von Multilagen eine Reduktion um 0,1...0,2 zu beobachten ist. Weiterhin aeussert sich der Einfluss der Grenzflaeche in dem Auftreten einer Schulter an der Flanke geringeren Energieverlusts der Mn-L3-Kante. Die geometrische Phasenanalyse von HRTEM-Aufnahmen und TEM-Hellfeldaufnahmen belegen eine tetragonale Verzerrung des LSMO-Schichtkristalls, der aus

Static and dynamic spin fluctuations in the spin glass doping regime in La2-xSrxCuO4+y

International Nuclear Information System (INIS)

Birgeneau, R.J.; Belk, N.; Kastner, M.A.; Keimer, B.; Shirane, G.

1991-01-01

We review the results of neutron scattering studies of the static and dynamic spin fluctuations crystals of La 2-x Sr x CuO 4+δ in the doping regime intermediate between the Neel and superconducting regions. In this regime the in-plane resistance is linear in temperature down to ∼80 K with a crossover due to logarithmic conductance effects at lower temperatures. The static spin correlations are well-described by a simple model in which the inverse correlation length κ(x,T) =κ(x,0) + κ(0,T). The most dramatic new result is the discovery by Keimer et al. that the dynamic spin fluctuations exhibit a temperature dependence which is a simple function of ω/T for temperatures 10 K≤T≤500 K for a wide range of energies. This scaling leads to a natural explanation of a variety of normal state properties of the copper oxides. 21 refs., 4 figs

Autosomal male determination in a spinosad-resistant housefly strain from Denmark

DEFF Research Database (Denmark)

Højland, Dorte H; Scott, Jeffrey G; Vagn Jensen, Karl-Martin

2014-01-01

males in this strain. The factor responsible for spinosad resistance in the strain is unknown, but previous studies suggest a role of cytochrome P450s for detoxification of spinosad. Sex determination in the housefly is controlled by a male-determining factor (M), either located on the Y chromosome......BACKGROUND The housefly, Musca domestica L., is a global pest and has developed resistance to most insecticides applied for its control. The insecticide spinosad plays an important role in housefly control. Females of the Danish housefly strain 791spin are threefold more resistant to spinosad than...... of resistance to spinosad. Sex determination in 791spin is due to a male factor on autosome 3. CONCLUSIONS The most likely explanation for the differentiation of spinosad resistance between males and females is a recessive spinosad resistance factor on autosome III. © 2013 Society of Chemical Industry...

Non magnetic neutron spin quantum precession using multilayer spin splitter and a phase-spin echo interferometer

Energy Technology Data Exchange (ETDEWEB)

Ebisawa, T.; Tasaki, S.; Kawai, T.; Akiyoshi, T. [Kyoto Univ., Kumatori, Osaka (Japan). Research Reactor Inst.; Achiwa, N.; Hino, M.; Otake, Y.; Funahashi, H.

1996-08-01

The authors have developed cold neutron optics and interferometry using multilayer mirrors. The advantages of the multilayer mirrors are their applicability to long wavelength neutrons and a great variety of the mirror performance. The idea of the present spin interferometry is based on nonmagnetic neutron spin quantum precession using multilayer spin splitters. The equation for polarized neutrons means that the polarized neutrons are equivalent to the coherent superposition of two parallel spin eigenstates. The structure and principle of a multilayer spin splitter are explained, and the nonmagnetic gap layer of the multilayer spin splitter gives rise to neutron spin quantum precession. The performance test of the multilayer spin splitter were made with a new spin interferometer, which is analogous optically to a spin echo system with vertical precession field. The spin interferometers were installed at Kyoto University research reactor and the JRR-3. The testing method and the results are reported. The performance tests on a new phase-spin echo interferometer are described, and its applications to the development of a high resolution spin echo system and a Jamin type cold neutron interferometer are proposed. (K.I.)

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Directory of Open Access Journals (Sweden)

Leilei Xu

2017-01-01

Full Text Available Two-dimensional (2D layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR properties of a black phosphorus (BP spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

Spin current through quantum-dot spin valves

International Nuclear Information System (INIS)

Wang, J; Xing, D Y

2006-01-01

We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

Pushing nanoparticles of La0.7Sr0.3MnO3

International Nuclear Information System (INIS)

Ma, Y.-R.; Liou Yung; Yao, Y.-D.

2004-01-01

Pushing nanoparticles of La 0.7 Sr 0.3 MnO 3 (LSMO) on a native SiO 2 surface using atomic force microscopy (AFM) in the tapping mode is presented. The pushing is accompanied by a repulsive tip-sample interaction between the AFM tip and the LSMO nanoparticles and the physisorption of the LSMO on the SiO 2 surface. The AFM images show scratch artifacts on the surface, indicating that artificial scratches are strongly related to the pushing of the LSMO nanoparticles. A possible approach to pushing nanoparticles is proposed

Compound nucleus effects in spin-spin cross sections

International Nuclear Information System (INIS)

Thompson, W.J.

1976-01-01

By comparison with recent data, it is shown that spin-spin cross sections for low-energy neutrons may be dominated by a simple compound-elastic level-density effect, independent of spin-spin terms in the nucleon-nucleus optical-model potential. (Auth.)

The Impact of Morphology and Composition on the Resistivity and Oxidation Resistance of Metal Nanostructure Films

Science.gov (United States)

Stewart, Ian Edward

Printed electronics, including transparent conductors, currently rely on expensive materials to generate high conductivity devices. Conductive inks for thick film applications utilizing inkjet, aerosol, and screen printing technologies are often comprised of expensive and rare silver particles. Thin film applications such as organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs) predominantly employ indium tin oxide (ITO) as the transparent conductive layer which requires expensive and wasteful vapor deposition techniques. Thus an alternative to silver and ITO with similar performance in printed electronics warrants considerable attention. Copper nanomaterials, being orders of magnitude cheaper and more abundant than silver or indium, solution-coatable, and exhibiting a bulk conductivity only 6 % less than silver, have emerged as a promising candidate for incorporation in printed electronics. First, we examine the effect of nanomaterial shape on the conductivity of thick films. The inks used in such films often require annealing at elevated temperature in order to sinter the silver nanoparticles together and obtain low resistivities. We explore the change in morphology and resistivity that occurs upon heating thick films of silver nanowires (of two different lengths, Ag NWs), nanoparticles (Ag NPs), and microflakes (Ag MFs) deposited from water at temperatures between 70 and 400 °C. At the lowest temperatures, longer Ag NWs exhibited the lowest resistivity (1.8 x 10-5 O cm), suggesting that the resistivity of thick films of silver nanostructures is dominated by the contact resistance between particles. This result supported previous research showing that junction resistance between Ag NWs in thin film conductors also dominates optoelectronic performance. Since the goal is to replace silver with copper, we perform a similar analysis by using a pseudo-2D rod network modeling approach that has been modified to include lognormal distributions in length

Optical spin generation/detection and spin transport lifetimes

International Nuclear Information System (INIS)

Miah, M. Idrish

2011-01-01

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Optical spin generation/detection and spin transport lifetimes

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-02-25

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Training effects induced by cycling of magnetic field in ferromagnetic rich phase-separated nanocomposite manganites

Energy Technology Data Exchange (ETDEWEB)

Das, Kalipada, E-mail: kalipada.das@saha.ac.in; Das, I.

2015-12-01

We have carried out an experimental investigation of magneto-transport and magnetic properties of charge-ordered Pr{sub 0.67}Ca{sub 0.33}MnO{sub 3} (PCMO) and ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) nanoparticles along with a nanocomposite consisting of those two types of nanoparticles. From the magneto-transport measurements, clear irreversibility is observed in the field dependence of resistance due to magnetic field cycling in the case of PCMO nanoparticles. The value of resistance increases during such a field cycling. However such an irreversibility is absent in the case of LSMO nanoparticles as well as nanocomposites. On the other hand, the magnetic measurements indicate the gradual growth of antiferromagnetic phases in all samples leading to a decrease in magnetization. These inconsistencies between magneto-transport and magnetic behaviors are attributed to the magnetic training effects. - Highlights: • The resistance value in Pr{sub 0.67}Ca{sub 0.33}MnO{sub 3} nanoparticles is found to increase owing to the magnetic field cycling. • No anomaly in resistance was found in Pr{sub 0.67}Ca{sub 0.33}MnO{sub 3}–La{sub 0.67}Sr{sub 0.33}MnO{sub 3} nanocomposite. • Magnetic measurements indicate the training effect in nanostructure compounds.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung

2015-04-06

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurelien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-01-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

Science.gov (United States)

Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

2018-05-01

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

Energy Technology Data Exchange (ETDEWEB)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris, E-mail: hammel@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-05-07

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

Science.gov (United States)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris

2015-05-01

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

International Nuclear Information System (INIS)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris

2015-01-01

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems

Noise in tunneling spin current across coupled quantum spin chains

Science.gov (United States)

Aftergood, Joshua; Takei, So

2018-01-01

We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.

When measured spin polarization is not spin polarization

International Nuclear Information System (INIS)

Dowben, P A; Wu Ning; Binek, Christian

2011-01-01

Spin polarization is an unusually ambiguous scientific idiom and, as such, is rarely well defined. A given experimental methodology may allow one to quantify a spin polarization but only in its particular context. As one might expect, these ambiguities sometimes give rise to inappropriate interpretations when comparing the spin polarizations determined through different methods. The spin polarization of CrO 2 and Cr 2 O 3 illustrate some of the complications which hinders comparisons of spin polarization values. (viewpoint)

Magnetic Nanostructures Spin Dynamics and Spin Transport

CERN Document Server

Farle, Michael

2013-01-01

Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

Effect of pressure on spin fluctuations and superconductivity in heavy-fermion UPt3

International Nuclear Information System (INIS)

Willis, J.O.; Thompson, J.D.; Fisk, Z.; de Visser, A.; Franse, J.J.M.; Menovsky, A.

1985-01-01

We have determined the effect of hydrostatic pressure on the susceptibility, on the T 2 temperature dependence of the spin-fluctuation resistivity, and on superconductivity in UPt 3 . The spin-fluctuation temperature T/sub s/, derived from the slope of resistivity versus T 2 , is used within a Fermi-liquid picture to calculate the susceptibility chi at T = 0 K. The depression of this calculated chi with pressure agrees with the directly measured value partial lnchi/partialP = -24 Mbar -1 . Both the superconducting transition temperature T/sub c/ and the initial slope of the upper critical field also decrease under pressure. We find that partial lnT/sub c//partialP = -25 Mbar -1 and speculate upon correlations between chi and T/sub c/

Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

International Nuclear Information System (INIS)

Lipperheide, R.; Wille, U.

2006-01-01

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

Spin Relaxation and Manipulation in Spin-orbit Qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-02-01

We derive a generalized form of the Electric Dipole Spin Resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g-tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD). Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems

Science.gov (United States)

Hamamoto, Keita; Ezawa, Motohiko; Kim, Kun Woo; Morimoto, Takahiro; Nagaosa, Naoto

2017-06-01

Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and has been studied actively. For example, representative methods of spin-current generation include spin-polarized current injections from ferromagnetic metals, the spin Hall effect, and the spin battery. Here, we theoretically propose a mechanism of spin-current generation based on nonlinear phenomena. By using Boltzmann transport theory, we show that a simple application of the electric field E induces spin current proportional to E2 in noncentrosymmetric spin-orbit coupled systems. We demonstrate that the nonlinear spin current of the proposed mechanism is supported in the surface state of three-dimensional topological insulators and two-dimensional semiconductors with the Rashba and/or Dresselhaus interaction. In the latter case, the angular dependence of the nonlinear spin current can be manipulated by the direction of the electric field and by the ratio of the Rashba and Dresselhaus interactions. We find that the magnitude of the spin current largely exceeds those in the previous methods for a reasonable magnitude of the electric field. Furthermore, we show that application of ac electric fields (e.g., terahertz light) leads to the rectifying effect of the spin current, where dc spin current is generated. These findings will pave a route to manipulate the spin current in noncentrosymmetric crystals.

High-Frequency Dynamics Modulated by Collective Magnetization Reversal in Artificial Spin Ice

Energy Technology Data Exchange (ETDEWEB)

Jungfleisch, Matthias B.; Sklenar, Joseph; Ding, Junjia; Park, Jungsik; Pearson, John E.; Novosad, Valentine; Schiffer, Peter; Hoffmann, Axel

2017-12-01

Spin-torque ferromagnetic resonance arises in heavy metal-ferromagnet heterostructures when an alternating charge current is passed through the bilayer stack. The methodology to detect the resonance is based on the anisotropic magnetoresistance, which is the change in the electrical resistance due to different orientations of the magnetization. In connected networks of ferromagnetic nanowires, known as artificial spin ice, the magnetoresistance is rather complex owing to the underlying collective behavior of the geometrically frustrated magnetic domain structure. Here, we demonstrate spin-torque ferromagnetic resonance investigations in a square artificial spin-ice system and correlate our observations to magneto-transport measurements. The experimental findings are described using a simulation approach that highlights the importance of the correlated dynamics response of the magnetic system. Our results open the possibility of designing reconfigurable microwave oscillators and magnetoresistive devices based on connected networks of nanomagnets.

High-Frequency Dynamics Modulated by Collective Magnetization Reversal in Artificial Spin Ice

Science.gov (United States)

Jungfleisch, Matthias B.; Sklenar, Joseph; Ding, Junjia; Park, Jungsik; Pearson, John E.; Novosad, Valentine; Schiffer, Peter; Hoffmann, Axel

2017-12-01

Spin-torque ferromagnetic resonance arises in heavy metal-ferromagnet heterostructures when an alternating charge current is passed through the bilayer stack. The methodology to detect the resonance is based on the anisotropic magnetoresistance, which is the change in the electrical resistance due to different orientations of the magnetization. In connected networks of ferromagnetic nanowires, known as artificial spin ice, the magnetoresistance is rather complex owing to the underlying collective behavior of the geometrically frustrated magnetic domain structure. Here, we demonstrate spin-torque ferromagnetic resonance investigations in a square artificial spin-ice system and correlate our observations to magnetotransport measurements. The experimental findings are described using a simulation approach that highlights the importance of the correlated dynamics response of the magnetic system. Our results open the possibility of designing reconfigurable microwave oscillators and magnetoresistive devices based on connected networks of nanomagnets.

Spin temperature concept verified by optical magnetometry of nuclear spins

Science.gov (United States)

Vladimirova, M.; Cronenberger, S.; Scalbert, D.; Ryzhov, I. I.; Zapasskii, V. S.; Kozlov, G. G.; Lemaître, A.; Kavokin, K. V.

2018-01-01

We develop a method of nonperturbative optical control over adiabatic remagnetization of the nuclear spin system and apply it to verify the spin temperature concept in GaAs microcavities. The nuclear spin system is shown to exactly follow the predictions of the spin temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalization. These findings open a way for the deep cooling of nuclear spins in semiconductor structures, with the prospect of realizing nuclear spin-ordered states for high-fidelity spin-photon interfaces.

Spin-Mechatronics

Science.gov (United States)

Matsuo, Mamoru; Saitoh, Eiji; Maekawa, Sadamichi

2017-01-01

We investigate the interconversion phenomena between spin and mechanical angular momentum in moving objects. In particular, the recent results on spin manipulation and spin-current generation by mechanical motion are examined. In accelerating systems, spin-dependent gauge fields emerge, which enable the conversion from mechanical angular momentum into spins. Such a spin-mechanical effect is predicted by quantum theory in a non-inertial frame. Experiments which confirm the effect, i.e., the resonance frequency shift in nuclear magnetic resonance, the stray field measurement of rotating metals, and electric voltage generation in liquid metals, are discussed.

Electron spin and nuclear spin manipulation in semiconductor nanosystems

International Nuclear Information System (INIS)

Hirayama, Yoshiro; Yusa, Go; Sasaki, Satoshi

2006-01-01

Manipulations of electron spin and nuclear spin have been studied in AlGaAs/GaAs semiconductor nanosystems. Non-local manipulation of electron spins has been realized by using the correlation effect between localized and mobile electron spins in a quantum dot- quantum wire coupled system. Interaction between electron and nuclear spins was exploited to achieve a coherent control of nuclear spins in a semiconductor point contact device. Using this device, we have demonstrated a fully coherent manipulation of any two states among the four spin levels of Ga and As nuclei. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Bulk electron spin polarization generated by the spin Hall current

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that the spin Hall current generates a non-equilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known equilibrium polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

Bulk electron spin polarization generated by the spin Hall current

Science.gov (United States)

Korenev, V. L.

2006-07-01

It is shown that the spin Hall current generates a nonequilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known “equilibrium” polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

DEFF Research Database (Denmark)

Chen, Yunzhong; Gan, Yulin; Christensen, Dennis Valbjørn

2017-01-01

Modulation-doped oxide two-dimensional electron gas formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x = 0, 1/8, ...... of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3....

Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei; Pearson, John E.; Hoffmann, Axel [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Vlaminck, Vincent [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Colegio de Ciencias e Ingenería, Universidad San Fransciso de Quito, Quito (Ecuador); Divan, Ralu [Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States); Bader, Samuel D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States)

2013-12-09

The spin diffusion length of Pt at room temperature and at 8 K is experimentally determined via spin pumping and spin Hall effect in permalloy/Pt bilayers. Voltages generated during excitation of ferromagnetic resonance from the inverse spin Hall effect and anisotropic magnetoresistance effect were investigated with a broadband approach. Varying the Pt layer thickness gives rise to an evolution of the voltage line shape due to the superposition of the above two effects. By studying the ratio of the two voltage components with the Pt layer thickness, the spin diffusion length of Pt can be directly extracted. We obtain a spin diffusion length of ∼1.2 nm at room temperature and ∼1.6 nm at 8 K.

Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications

International Nuclear Information System (INIS)

Park, Kyoung-Seok; Ko, Pil-Seok; Kim, Sam-Dong

2014-01-01

Effects of the N 2 O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer-dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 °C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N 2 O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT. - Highlights: • Perhydropolysilazane (PHPS) layer is evaluated as a Si interlayer dielectric. • Examine effects of the N 2 O plasma treatment (PT) on PHPS spin-on-dielectrics (SODs) • Significantly improved metal contact resistances are achieved using the N 2 O PT. • Contact resistance enhancement by PT is due to the minimized carbon contamination

Development of low-k materials by spin-on using radiation

International Nuclear Information System (INIS)

Lee, Young Seak; Ryu, Seung Kon; Im, Ji Sun; Jung, Min Jung; Kim, Sang Jin; Bai, Byong Chol

2010-05-01

Establishment of dispersion technology to precursor solution like polycarbosilane, polyvinylsilane for carbons (carbon nanotubes, carbon blacks, graphites, etc.) and metalic conductive infills. Preparation technology and characterization for silicon carbide fiber having developed electro conductivity and heat resistance by melting and electro spinning. In this study, development of the new functional technique for application of SiC fiber using electro/melting spinning and sintering method. Extension to economical industrial field from the national strategy industrial field. Ultra high temperature materials for new energy technology like nuclear fusion. Extension of SiC application fields according to development of electrical conductivity

Muon spin relaxation measurements of spin-correlation decay in spin-glass AgMn

Energy Technology Data Exchange (ETDEWEB)

Heffner, R.H.; Cooke, D.W.; Leon, M.; Schillaci, M.E. (Los Alamos National Lab., NM (USA)); MacLaughlin, D.E.; Gupta, L.C. (California Univ., Riverside (USA))

1984-01-01

The field (H) dependence of the muon longitudinal spin-lattice relaxation rate well below the spin glass temperature in AgMn is found to obey an algebraic form given by (H)sup(..gamma..-1), with ..gamma.. = 0.54 +- 0.05. This suggests that Mn spin correlations decay with time as tsup(-..gamma..), in agreement with mean field theories of spin-glass dynamics which yield ..gamma..

Spin manipulation and relaxation in spin-orbit qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-03-01

We derive a generalized form of the electric dipole spin resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD), where coherent Rabi oscillations between the singlet and triplet states are induced by jittering the inter-dot distance at the resonance frequency. Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

On the structure and spin states of Fe(III)-EDDHA complexes.

Science.gov (United States)

Gómez-Gallego, Mar; Fernández, Israel; Pellico, Daniel; Gutiérrez, Angel; Sierra, Miguel A; Lucena, Juan J

2006-07-10

DFT methods are suitable for predicting both the geometries and spin states of EDDHA-Fe(III) complexes. Thus, extensive DFT computational studies have shown that the racemic-Fe(III) EDDHA complex is more stable than the meso isomer, regardless of the spin state of the central iron atom. A comparison of the energy values obtained for the complexes under study has also shown that high-spin (S = 5/2) complexes are more stable than low-spin (S = 1/2) ones. These computational results matched the experimental results of the magnetic susceptibility values of both isomers. In both cases, their behavior has been fitted as being due to isolated high-spin Fe(III) in a distorted octahedral environment. The study of the correlation diagram also confirms the high-spin iron in complex 2b. The geometry optimization of these complexes performed with the standard 3-21G* basis set for hydrogen, carbon, oxygen, and nitrogen and the Hay-Wadt small-core effective core potential (ECP) including a double-xi valence basis set for iron, followed by single-point energy refinement with the 6-31G* basis set, is suitable for predicting both the geometries and the spin-states of EDDHA-Fe(III) complexes. The presence of a high-spin iron in Fe(III)-EDDHA complexes could be the key to understanding their lack of reactivity in electron-transfer processes, either chemically or electrochemically induced, and their resistance to photodegradation.

The role of topological spin defects in magnetotransport of CrO2

International Nuclear Information System (INIS)

Yanagihara, H; Salamon, M B

2007-01-01

We investigated the temperature dependence of the resistivity for a wide temperature range for CrO 2 (100) epitaxial films. The temperature derivative dρ/dT definitely shows the same character as the magnetic heat capacity anomaly in the critical regime even in a finite magnetic field and the critical exponents (α) deduced are consistent with those of 3D Heisenberg ferromagnets. In addition, we found that the spin dependent resistivity over a wide temperature range can be simply proportional to the density of diluted topological spin defects (Skyrmion strings) suggesting that those nontrivial topological defects scatter conduction electrons just like impurities. The excitation energy of such topological defects is quite comparable to that obtained by anomalous Hall effect analysis of the Ye et al model based on the Berry phase. The overall results give a simple picture wherein the density of the topological defects can be a dominant mechanism of resistivity, like the anomalous Hall effect. The results concerning the critical exponent analysis and intuition concerning scattering centres of magnetic disorder suggest a specific picture of the Fisher-Langer model

Photoinduced second harmonic generation of LaFe4Sb12near spin fluctuated critical points

International Nuclear Information System (INIS)

Nouneh, K.; Viennois, R.; Kityk, I.V.; Terki, F.; Charar, S.; Benet, S.; Paschen, S.

2004-01-01

The temperature dependence of the resistivity, the Seebeck coefficient and photoinduced second harmonic generation (PISHG) are studied near the quantum critical point in the skutterudite compound LaFe 4 Sb 12 , possessing increased spin fluctuations. We observed a large maximum of the PISHG at a temperature of about 15 K. The PISHG signal increases substantially below 35 K. We found a correlation between the temperature dependences of PISHG, resistivity and Seebeck coefficient. We proposed a phenomenological explanation for the occurrence of the PISHG signal in LaFe 4 Sb 12 implying strong spin fluctuations exist in this system, which may present some interest for the study of other spin fluctuation systems. Physical insight into the phenomenon observed is grounded in the participation of anharmonic electron-phonon and electron-paramagnon interactions stimulated by inducing light in the interactions with the photoexcited dipole moments. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.

Science.gov (United States)

Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping

2018-01-09

The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

Muon spin relaxation measurements of spin-correlation decay in spin-glass AgMn

International Nuclear Information System (INIS)

Heffner, R.H.; Cooke, D.W.; Leon, M.; Schillaci, M.E.; MacLaughlin, D.E.; Gupta, L.C.

1984-01-01

The field (H) dependence of the muon longitudinal spin-lattice relaxation rate well below the spin glass temperature in AgMn is found to obey an algebraic form given by (H)sup(γ-1), with γ = 0.54 +- 0.05. This suggests that Mn spin correlations decay with time as tsup(-γ), in agreement with mean field theories of spin-glass dynamics which yield γ < approx. 0.5. Near the glass temperature the agreement between the data and theory is not as good. (Auth.)

Spin-orbit mediated control of spin qubits

DEFF Research Database (Denmark)

Flindt, Christian; Sørensen, A.S; Flensberg, Karsten

2006-01-01

We propose to use the spin-orbit interaction as a means to control electron spins in quantum dots, enabling both single-qubit and two-qubit operations. Very fast single-qubit operations may be achieved by temporarily displacing the electrons. For two-qubit operations the coupling mechanism is bas...... on a combination of the spin-orbit coupling and the mutual long-ranged Coulomb interaction. Compared to existing schemes using the exchange coupling, the spin-orbit induced coupling is less sensitive to random electrical fluctuations in the electrodes defining the quantum dots....

Spinning particle approach to higher spin field theory

International Nuclear Information System (INIS)

Corradini, Olindo

2011-01-01

We shortly review on the connection between higher-spin gauge field theories and supersymmetric spinning particle models. In such approach the higher spin equations of motion are linked to the first-class constraint algebra associated with the quantization of particle models. Here we consider a class of spinning particle models characterized by local O(N)-extended supersymmetry since these models are known to provide an alternative approach to the geometric formulation of higher spin field theory. We describe the canonical quantization of the models in curved target space and discuss the obstructions that appear in presence of an arbitrarily curved background. We then point out the special role that conformally flat spaces appear to have in such models and present a derivation of the higher-spin curvatures for maximally symmetric spaces.

Shot noise of spin current and spin transfer torque

Science.gov (United States)

Yu, Yunjin; Zhan, Hongxin; Wan, Langhui; Wang, Bin; Wei, Yadong; Sun, Qingfeng; Wang, Jian

2013-04-01

We report the theoretical investigation of the shot noise of the spin current (Sσ) and the spin transfer torque (Sτ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear Sσ - V and Sτ - V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage Nτ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque Nτ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period Nτ(θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters.

Spins of adsorbed molecules investigated by the detection of Kondo resonance

Science.gov (United States)

Komeda, Tadahiro

2014-12-01

Surface magnetism has been one of the platforms to explore the magnetism in low dimensions. It is also a key component for the development of quantum information processes, which utilizes the spin degree of freedom. The Kondo resonance is a phenomenon that is caused by an interaction between an isolated spin and conduction electrons. First observed in the 1930s as an anomalous increase in the low-temperature resistance of metals embedded with magnetic atoms, the Kondo physics mainly studied the effects of bulk magnetic impurities in the resistivity. In the last 15 years it has undergone a revival by a scanning tunneling microscope (STM) which enables the measurement of the Kondo resonance at surfaces using an atomic scale point contact. The detection of the Kondo resonance can be a powerful tool to explore surface magnetism. In this article, I review recent studies of the surface spin of adsorbed molecules by the detection of the Kondo resonance. Researches on metal phthalocyanine (MPc) and porphyrin molecules will be examined. In addition, the Kondo resonance for double-decker lanthanoide Pc molecules will be discussed. Some of the double-decker Pc molecules show single-molecule magnet (SMM) behavior, which attracts attention as a material for electronic devices. For both classes, the ligand plays a crucial role in determining the parameters of the Kondo resonance, such as the Kondo temperature and the change of the shape from peak to Fano-dip. In addition, the spin in delocalized molecular orbital forms the Kondo resonance, which shows significant differences from the Kondo resonance formed by the metal spins. Since molecular orbital can be tuned in a flexible manner by the design of the molecule, the Kondo resonance formed by delocalized molecular orbital might expand the knowledge of this field.

Discovery of Enhanced Magnetoelectric Coupling through Electric Field Control of Two-Magnon Scattering within Distorted Nanostructures.

Science.gov (United States)

Xue, Xu; Zhou, Ziyao; Dong, Guohua; Feng, Mengmeng; Zhang, Yijun; Zhao, Shishun; Hu, Zhongqiang; Ren, Wei; Ye, Zuo-Guang; Liu, Yaohua; Liu, Ming

2017-09-26

Electric field control of dynamic spin interactions is promising to break through the limitation of the magnetostatic interaction based magnetoelectric (ME) effect. In this work, electric field control of the two-magnon scattering (TMS) effect excited by in-plane lattice rotation has been demonstrated in a La 0.7 Sr 0.3 MnO 3 (LSMO)/Pb(Mn 2/3 Nb 1/3 )-PbTiO 3 (PMN-PT) (011) multiferroic heterostructure. Compared with the conventional strain-mediated ME effect, a giant enhancement of ME effect up to 950% at the TMS critical angle is precisely determined by angular resolution of the ferromagnetic resonance (FMR) measurement. Particularly, a large electric field modulation of magnetic anisotropy (464 Oe) and FMR line width (401 Oe) is achieved at 173 K. The electric-field-controllable TMS effect and its correlated ME effect have been explained by electric field modulation of the planar spin interactions triggered by spin-lattice coupling. The enhancement of the ME effect at various temperatures and spin dynamics control are promising paradigms for next-generation voltage-tunable spintronic devices.

Muon spin-relaxation measurements of spin-correlation decay in spin-glass AgMn

International Nuclear Information System (INIS)

Heffner, R.H.; Cooke, D.W.; Leon, M.; Schillaci, M.E.; MacLaughlin, D.E.; Gupta, L.C.

1983-01-01

The field (H) dependence of the muon longitudinal spin-lattice relaxation rate well below the spin-glass temperature in AgMn is found to obey an algebraic form given by (H)/sup nu-1/, with nu = 0.54 +- 0.05. This suggests that Mn spin correlations decay with time as t - /sup nu/, in agreement with mean field theories of spin-glass dynamics which yield nu less than or equal to 0.5. Near the glass temperature the agreement between the data and theory is not as good

Spin-chirality decoupling in Heisenberg spin glasses and related systems

OpenAIRE

Kawamura, Hikaru

2006-01-01

Recent studies on the spin and the chirality orderings of the three-dimensional Heisenberg spin glass and related systems are reviewed with particular emphasis on the possible spin-chirality decoupling phenomena. Chirality scenario of real spin-glass transition and its experimental consequence on the ordering of Heisenberg-like spin glasses are discussed.

Spin current

CERN Document Server

Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

2012-01-01

In a new branch of physics and technology called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called 'spin current', are manipulated and controlled together. This book provides an introduction and guide to the new physics and application of spin current.

Spin current

CERN Document Server

Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

2017-01-01

Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

Nuclear spin noise in the central spin model

Science.gov (United States)

Fröhling, Nina; Anders, Frithjof B.; Glazov, Mikhail

2018-05-01

We study theoretically the fluctuations of the nuclear spins in quantum dots employing the central spin model which accounts for the hyperfine interaction of the nuclei with the electron spin. These fluctuations are calculated both with an analytical approach using homogeneous hyperfine couplings (box model) and with a numerical simulation using a distribution of hyperfine coupling constants. The approaches are in good agreement. The box model serves as a benchmark with low computational cost that explains the basic features of the nuclear spin noise well. We also demonstrate that the nuclear spin noise spectra comprise a two-peak structure centered at the nuclear Zeeman frequency in high magnetic fields with the shape of the spectrum controlled by the distribution of the hyperfine constants. This allows for direct access to this distribution function through nuclear spin noise spectroscopy.

Entanglement entropy in random quantum spin-S chains

International Nuclear Information System (INIS)

Saguia, A.; Boechat, B.; Continentino, M. A.; Sarandy, M. S.

2007-01-01

We discuss the scaling of entanglement entropy in the random singlet phase (RSP) of disordered quantum magnetic chains of general spin S. Through an analysis of the general structure of the RSP, we show that the entanglement entropy scales logarithmically with the size of a block, and we provide a closed expression for this scaling. This result is applicable for arbitrary quantum spin chains in the RSP, being dependent only on the magnitude S of the spin. Remarkably, the logarithmic scaling holds for the disordered chain even if the pure chain with no disorder does not exhibit conformal invariance, as is the case for Heisenberg integer-spin chains. Our conclusions are supported by explicit evaluations of the entanglement entropy for random spin-1 and spin-3/2 chains using an asymptotically exact real-space renormalization group approach

Competing Spin Liquids and Hidden Spin-Nematic Order in Spin Ice with Frustrated Transverse Exchange

Directory of Open Access Journals (Sweden)

Mathieu Taillefumier

2017-12-01

Full Text Available Frustration in magnetic interactions can give rise to disordered ground states with subtle and beautiful properties. The spin ices Ho_{2}Ti_{2}O_{7} and Dy_{2}Ti_{2}O_{7} exemplify this phenomenon, displaying a classical spin-liquid state, with fractionalized magnetic-monopole excitations. Recently, there has been great interest in closely related “quantum spin-ice” materials, following the realization that anisotropic exchange interactions could convert spin ice into a massively entangled, quantum spin liquid, where magnetic monopoles become the charges of an emergent quantum electrodynamics. Here we show that even the simplest model of a quantum spin ice, the XXZ model on the pyrochlore lattice, can realize a still-richer scenario. Using a combination of classical Monte Carlo simulation, semiclassical molecular-dynamics simulation, and analytic field theory, we explore the properties of this model for frustrated transverse exchange. We find not one, but three competing forms of spin liquid, as well as a phase with hidden, spin-nematic order. We explore the experimental signatures of each of these different states, making explicit predictions for inelastic neutron scattering. These results show an intriguing similarity to experiments on a range of pyrochlore oxides.

Preparation of the La0.8Sr0.2MnO3 films on STO and LAO substrates by excimer laser-assisted metal organic deposition using the KrF laser

International Nuclear Information System (INIS)

Tsuchiya, T.; Daoudi, K.; Manabe, T.; Yamaguchi, I.; Kumagai, T.

2007-01-01

La 0.8 Sr 0.2 MnO 3 films were prepared on SrTiO 3 (STO) and LaAlO 3 (LAO) substrates using excimer laser-assisted metal organic deposition (ELAMOD). For the LAO substrate, no epitaxial La 0.8 Sr 0.2 MnO 3 film was obtained by laser irradiation in the fluence range from 60 to 110 mJ/cm 2 with heating at 500 deg. C. On the other hand, an epitaxial La 0.8 Sr 0.2 MnO 3 film on the STO substrate was formed by laser irradiation in the fluence range from 60 to 100 mJ/cm 2 with heating at 500 deg. C. To optimize the electrical properties for an IR sensor, the effects of the laser fluence, the irradiation time and the film thickness on the temperature dependence of the resistance and temperature coefficient of resistance (TCR: defined as 1/R.(dR/dT)) of the LSMO films were investigated. An LSMO film on the STO substrate that showed the maximum TCR of 3.9% at 265 K was obtained by the ELAMOD process using the KrF laser

Separating inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wenxu, E-mail: xwzhang@uestc.edu.cn; Peng, Bin; Han, Fangbin; Wang, Qiuru; Zhang, Wanli [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Soh, Wee Tee; Ong, Chong Kim [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore)

2016-03-07

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from the spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, the inversion of the spin injection direction changes the ISHE voltage signal, while the SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range and has the flexibility of sample preparation.

Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

Science.gov (United States)

Mkhitaryan, V. V.; Dobrovitski, V. V.

2017-06-01

We investigate the role of the nuclear-spin quantum dynamics in hyperfine-induced spin relaxation of hopping carriers in organic semiconductors. The fast-hopping regime, when the carrier spin does not rotate much between subsequent hops, is typical for organic semiconductors possessing long spin coherence times. We consider this regime and focus on a carrier random-walk diffusion in one dimension, where the effect of the nuclear-spin dynamics is expected to be the strongest. Exact numerical simulations of spin systems with up to 25 nuclear spins are performed using the Suzuki-Trotter decomposition of the evolution operator. Larger nuclear-spin systems are modeled utilizing the spin-coherent state P -representation approach developed earlier. We find that the nuclear-spin dynamics strongly influences the carrier spin relaxation at long times. If the random walk is restricted to a small area, it leads to the quenching of carrier spin polarization at a nonzero value at long times. If the random walk is unrestricted, the carrier spin polarization acquires a long-time tail, decaying as 1 /√{t } . Based on the numerical results, we devise a simple formula describing the effect quantitatively.

Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

Science.gov (United States)

Bode, Matthias

2012-01-01

The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures.

Chaotic spin exchange: is the spin non-flip rate observable?

International Nuclear Information System (INIS)

Senba, Masayoshi

1994-01-01

If spin exchange is of the Poisson nature, that is, if the time distribution of collisions obeys an exponential distribution function and the collision process is random, the muon spin depolarization is determined only by the spin flip rate regardless of the spin non-flip rate. In this work, spin exchange is discussed in the case of chaotic spin exchange, where the distribution of collision time sequences, generated by a deterministic equation, is exponential but not random (deterministic chaos). Even though this process has the same time distribution as a Poisson process, the muon polarization is affected by the spin non-flip rate. Having an exponential time distribution function is not a sufficient condition for the non-observation of the spin non-flip rate and it is essential that the process is also random. (orig.)

Vibration dependence of the tensor spin-spin and scalar spin-spin hyperfine interactions by precision measurement of hyperfine structures of 127I2 near 532 nm

International Nuclear Information System (INIS)

Hong Fenglei; Zhang Yun; Ishikawa, Jun; Onae, Atsushi; Matsumoto, Hirokazu

2002-01-01

Hyperfine structures of the R(87)33-0, R(145)37-0, and P(132)36-0 transitions of molecular iodine near 532 nm are measured by observing the heterodyne beat-note signal of two I 2 -stabilized lasers, whose frequencies are bridged by an optical frequency comb generator. The measured hyperfine splittings are fit to a four-term Hamiltonian, which includes the electric quadrupole, spin-rotation, tensor spin-spin, and scalar spin-spin interactions, with an accuracy of ∼720 Hz. High-accurate hyperfine constants are obtained from this fit. Vibration dependences of the tensor spin-spin and scalar spin-spin hyperfine constants are determined for molecular iodine, for the first time to our knowledge. The observed hyperfine transitions are good optical frequency references in the 532-nm region

Shot noise of spin current and spin transfer torque

International Nuclear Information System (INIS)

Yu Yunjin; Zhan Hongxin; Wan Langhui; Wang Bin; Wei Yadong; Sun Qingfeng; Wang Jian

2013-01-01

We report the theoretical investigation of the shot noise of the spin current (S σ ) and the spin transfer torque (S τ ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear S σ − V and S τ − V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage N τ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque N τ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period N τ (θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters. (paper)

SU (N ) spin-wave theory: Application to spin-orbital Mott insulators

Science.gov (United States)

Dong, Zhao-Yang; Wang, Wei; Li, Jian-Xin

2018-05-01

We present the application of the SU (N ) spin-wave theory to spin-orbital Mott insulators whose ground states exhibit magnetic orders. When taking both spin and orbital degrees of freedom into account rather than projecting Hilbert space onto the Kramers doublet, which is the lowest spin-orbital locked energy levels, the SU (N ) spin-wave theory should take the place of the SU (2 ) one due to the inevitable spin-orbital multipole exchange interactions. To implement the application, we introduce an efficient general local mean-field method, which involves all local fluctuations, and develop the SU (N ) linear spin-wave theory. Our approach is tested firstly by calculating the multipolar spin-wave spectra of the SU (4 ) antiferromagnetic model. Then, we apply it to spin-orbital Mott insulators. It is revealed that the Hund's coupling would influence the effectiveness of the isospin-1 /2 picture when the spin-orbital coupling is not large enough. We further carry out the SU (N ) spin-wave calculations of two materials, α -RuCl3 and Sr2IrO4 , and find that the magnonic and spin-orbital excitations are consistent with experiments.

Spin-inversion in nanoscale graphene sheets with a Rashba spin-orbit barrier

Directory of Open Access Journals (Sweden)

Somaieh Ahmadi

2012-03-01

Full Text Available Spin-inversion properties of an electron in nanoscale graphene sheets with a Rashba spin-orbit barrier is studied using transfer matrix method. It is found that for proper values of Rashba spin-orbit strength, perfect spin-inversion can occur in a wide range of electron incident angle near the normal incident. In this case, the graphene sheet with Rashba spin-orbit barrier can be considered as an electron spin-inverter. The efficiency of spin-inverter can increase up to a very high value by increasing the length of Rashba spin-orbit barrier. The effect of intrinsic spin-orbit interaction on electron spin inversion is then studied. It is shown that the efficiency of spin-inverter decreases slightly in the presence of intrinsic spin-orbit interaction. The present study can be used to design graphene-based spintronic devices.

Spin-pump-induced spin transport in a thermally evaporated pentacene film

Energy Technology Data Exchange (ETDEWEB)

Tani, Yasuo; Shikoh, Eiji, E-mail: shikoh@elec.eng.osaka-cu.ac.jp [Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan); Teki, Yoshio [Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan)

2015-12-14

We report the spin-pump-induced spin transport properties of a pentacene film prepared by thermal evaporation. In a palladium(Pd)/pentacene/Ni{sub 80}Fe{sub 20} tri-layer sample, a pure spin-current is generated in the pentacene layer by the spin-pumping of Ni{sub 80}Fe{sub 20}, which is independent of the conductance mismatch problem in spin injection. The spin current is absorbed into the Pd layer, converted into a charge current with the inverse spin-Hall effect in Pd, and detected as an electromotive force. This is clear evidence for the pure spin current at room temperature in pentacene films prepared by thermal evaporation.

Spin-Triplet Pairing Induced by Spin-Singlet Interactions in Noncentrosymmetric Superconductors

Science.gov (United States)

Matsuzaki, Tomoaki; Shimahara, Hiroshi

2017-02-01

In noncentrosymmetric superconductors, we examine the effect of the difference between the intraband and interband interactions, which becomes more important when the band splitting increases. We define the difference ΔVμ between their coupling constants, i.e., that between the intraband and interband hopping energies of intraband Cooper pairs. Here, the subscript μ of ΔVμ indicates that the interactions scatter the spin-singlet and spin-triplet pairs when μ = 0 and μ = 1,2,3, respectively. It is shown that the strong antisymmetric spin-orbit interaction reverses the target spin parity of the interaction: it converts the spin-singlet and spin-triplet interactions represented by ΔV0 and ΔVμ>0 into effective spin-triplet and spin-singlet pairing interactions, respectively. Hence, for example, triplet pairing can be induced solely by the singlet interaction ΔV0. We name the pairing symmetry of the system after that of the intraband Cooper pair wave function, but with an odd-parity phase factor excluded. The pairing symmetry must then be even, even for the triplet component, and the following results are obtained. When ΔVμ is small, the spin-triplet p-wave interactions induce spin-triplet s-wave and spin-triplet d-wave pairings in the regions where the repulsive singlet s-wave interaction is weak and strong, respectively. When ΔV0 is large, a repulsive interband spin-singlet interaction can stabilize spin-triplet pairing. When the Rashba interaction is adopted for the spin-orbit interaction, the spin-triplet pairing interactions mediated by transverse magnetic fluctuations do not contribute to triplet pairing.

Dynamical spin accumulation in large-spin magnetic molecules

Science.gov (United States)

Płomińska, Anna; Weymann, Ireneusz; Misiorny, Maciej

2018-01-01

The frequency-dependent transport through a nanodevice containing a large-spin magnetic molecule is studied theoretically in the Kondo regime. Specifically, the effect of magnetic anisotropy on dynamical spin accumulation is of primary interest. Such accumulation arises due to finite components of frequency-dependent conductance that are off diagonal in spin. Here, employing the Kubo formalism and the numerical renormalization group method, we demonstrate that the dynamical transport properties strongly depend on the relative orientation of spin moments in electrodes of the device, as well as on intrinsic parameters of the molecule. In particular, the effect of dynamical spin accumulation is found to be greatly affected by the type of magnetic anisotropy exhibited by the molecule, and it develops for frequencies corresponding to the Kondo temperature. For the parallel magnetic configuration of the device, the presence of dynamical spin accumulation is conditioned by the interplay of ferromagnetic-lead-induced exchange field and the Kondo correlations.

Hardy's argument and successive spin-s measurements

International Nuclear Information System (INIS)

Ahanj, Ali

2010-01-01

We consider a hidden-variable theoretic description of successive measurements of noncommuting spin observables on an input spin-s state. In this scenario, the hidden-variable theory leads to a Hardy-type argument that quantum predictions violate it. We show that the maximum probability of success of Hardy's argument in quantum theory is ((1/2)) 4s , which is more than in the spatial case.

Spin-off produced by the fusion research and development

International Nuclear Information System (INIS)

Koizumi, Koichi; Konishi, T.; Tsuji, Hiroshi

2001-03-01

Nuclear fusion devices are constructed by the integration of many frontier technologies and fusion science based on a wide area of science such as physics, electromagnetics, thermodynamics, mechanics, electrical engineering, electronics, material engineering, heat transfer and heat flow, thermal engineering, neutronics, cryogenics, chemical engineering, control engineering, instrumentation engineering, vacuum engineering. For this, the research and development of elementary technology for fusion devices contributes to advance the technology level of each basic field. In addition, the mutual stimulus among various research fields contributes to increase the potential level of whole 'science and technology'. The spin-offs produced by the fusion technology development give much contribution not only to the general industrial technologies such as semiconductor technology, precision machining of large component, but also contribute to the progress of the accelerator technology, application technology of superconductivity, instrumentation and diagnostics, plasma application technology, heat-resistant and heavy radiation-resistant material technology, vacuum technology, and computer simulation technology. The spin-off produced by the fusion technology development expedite the development of frontier technology of other field and give much contribution to the progress of basic science on physics, space science, material science, medical science, communication, and environment. This report describes the current status of the spin-off effects of fusion research and development by focusing on the contribution of technology development for International Thermonuclear Experimental Reactor (ITER) to industrial technology. The possibilities of future application in the future are also included in this report from the view point of researchers working for nuclear fusion development. Although the nuclear fusion research has a characteristic to integrate the frontier technologies of

Perovskite-type oxide films combined with gratings for reduction of material consumption and improvement of thermochromism property

International Nuclear Information System (INIS)

Huang Jinguo; Xuan Yimin; Li Qiang

2011-01-01

Combination of thermochromism of perovskite-type materials and gratings can result in some interesting variations of the spectral properties of structured surfaces. This paper aims at investigating thermal absorptive/radiative characteristics of structured thermochromic material La 0.825 Sr 0.175 MnO 3 (LSMO) with metallic and/or dielectric gratings. Numerical computation is conducted to obtain the distribution of the spectral absorptance of such structured surfaces with different structural parameters. The directional and temperature dependence of absorptance are also analyzed. The results reveal that compared with bulk LSMO material, the structured surface of LSMO achieves an improved thermochromic performance and much thinner layer of a structured LSMO film by combining the film with one-dimensional Al and SiO 2 gratings. Therefore, the other advantage of such structured surface is that the reduction of material consumption and weight is achieved due to the smaller LSMO layer thickness, which may be vital for thermal management of space vehicles.

Large spin current injection in nano-pillar-based lateral spin valve

Energy Technology Data Exchange (ETDEWEB)

Nomura, Tatsuya [Department of Physics, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan); Ohnishi, Kohei; Kimura, Takashi, E-mail: t-kimu@phys.kyushu-u.ac.jp [Department of Physics, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan)

2016-08-26

We have investigated the influence of the injection of a large pure spin current on a magnetization process of a non-locally located ferromagnetic dot in nano-pillar-based lateral spin valves. Here, we prepared two kinds of the nano-pillar-type lateral spin valve based on Py nanodots and CoFeAl nanodots fabricated on a Cu film. In the Py/Cu lateral spin valve, although any significant change of the magnetization process of the Py nanodot has not been observed at room temperature. The magnetization reversal process is found to be modified by injecting a large pure spin current at 77 K. Switching the magnetization by the nonlocal spin injection has also been demonstrated at 77 K. In the CoFeAl/Cu lateral spin valve, a room temperature spin valve signal was strongly enhanced from the Py/Cu lateral spin valve because of the highly spin-polarized CoFeAl electrodes. The room temperature nonlocal switching has been demonstrated in the CoFeAl/Cu lateral spin valve.

Spin Hall effects

Science.gov (United States)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

Spin-orbit induced electronic spin separation in semiconductor nanostructures.

Science.gov (United States)

Kohda, Makoto; Nakamura, Shuji; Nishihara, Yoshitaka; Kobayashi, Kensuke; Ono, Teruo; Ohe, Jun-ichiro; Tokura, Yasuhiro; Mineno, Taiki; Nitta, Junsaku

2012-01-01

The demonstration of quantized spin splitting by Stern and Gerlach is one of the most important experiments in modern physics. Their discovery was the precursor of recent developments in spin-based technologies. Although electrical spin separation of charged particles is fundamental in spintronics, in non-uniform magnetic fields it has been difficult to separate the spin states of charged particles due to the Lorentz force, as well as to the insufficient and uncontrollable field gradients. Here we demonstrate electronic spin separation in a semiconductor nanostructure. To avoid the Lorentz force, which is inevitably induced when an external magnetic field is applied, we utilized the effective non-uniform magnetic field which originates from the Rashba spin-orbit interaction in an InGaAs-based heterostructure. Using a Stern-Gerlach-inspired mechanism, together with a quantum point contact, we obtained field gradients of 10(8) T m(-1) resulting in a highly polarized spin current.

Mean-Field Studies of a Mixed Spin-3/2 and Spin-2 and a Mixed Spin-3/2 and Spin-5/2 Ising System with Different Anisotropies

International Nuclear Information System (INIS)

Wei Guozhu; Miao Hailing

2009-01-01

The magnetic properties of a mixed spin-3/2 and spin-2 and a mixed spin-3/2 and spin-5/2 Ising ferromagnetic system with different anisotropies are studied by means of mean-field theory (MFT). The dependence of the phase diagram on single-ion anisotropy strengths is studied too. In the mixed spin-3/2 and spin-2 Ising model, besides the second-order phase transition, the first order-disorder phase transition and the tricritical line are found. In the mixed spin-3/2 and spin-5/2 Ising model, there is no first-order transition and tricritical line. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spin and Charge Transport in 2D Materials and Magnetic Insulator/Metal Heterostructures

Science.gov (United States)

Amamou, Walid

Spintronic devices are very promising for future information storage, logic operations and computation and have the potential to replace current CMOS technology approaching the scaling limit. In particular, the generation and manipulation of spin current enables the integration of storage and logic within the same circuit for more powerful computing architectures. In this thesis, we examine the manipulation of spins in 2D materials such as graphene and metal/magnetic insulator heterostructures. In particular, we investigate the feasibility for achieving magnetization switching of a nanomagnet using graphene as a nonmagnetic channel material for All Spin Logic Device applications. Using in-situ MBE deposition of nanomagnet on graphene spin valve, we demonstrate the presence of an interfacial spin dephasing at the interface between the graphene and the nanomagnet. By introducing a Cu spacer between the nanomagnet and graphene, we demonstrate that this interfacial effect is related to an exchange interaction between the spin current and the disordered magnetic moment of the nanomagnet in the first monolayer. In addition to the newly discovered interfacial spin relaxation effect, the extracted contact resistance area product of the nanomagnet/graphene interface is relatively high on the order of 1Omicrom2. In practice, reducing the contact resistance will be as important as eliminating the interfacial relaxation in order to achieve magnetization switching. Furthermore, we examine spin manipulation in a nonmagnetic Pt using an internal magnetic exchange field produced by the adjacent magnetic insulator CoFe2O4 grown by MBE. Here, we report the observation of a strong magnetic proximity effect of Pt deposited on top of a perpendicular magnetic anisotropy (PMA) inverse spinel material Cobalt Ferrite (CFO, CoFe 2O4). The CFO was grown by MBE and its magnetization was characterized by Vibrating Sample Magnetometry (VSM) demonstrating the strong out of plane magnetic

The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

International Nuclear Information System (INIS)

Pugh, D.I.

2001-01-01

The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

Energy Technology Data Exchange (ETDEWEB)

Yang, Luyi [Univ. of California, Berkeley, CA (United States)

2013-05-17

suppressed by electron-electron interactions, leading to remarkable resistance to diffusive spreading of the drifting pulse of spin polarization. Finally, we show that spin helices continue propagate at the same speed as the Fermi sea even when the electron drift velocity exceeds the Fermi velocity of 107 cm s^-1.

Comparative Aspects of Spin-Dependent Interaction Potentials for Spin-1/2 and Spin-1 Matter Fields

Directory of Open Access Journals (Sweden)

P. C. Malta

2016-01-01

Full Text Available This paper sets out to establish a comparative study between classes of spin- and velocity-dependent potentials for spin-1/2 and spin-1 matter currents/sources in the nonrelativistic regime. Both (neutral massive scalar and vector particles are considered to mediate the interactions between (pseudo-scalar sources or (pseudo-vector currents. Though our discussion is more general, we contemplate specific cases in which our results may describe the electromagnetic interaction with a massive (Proca-type photon exchanged between two spin-1/2 or two spin-1 carriers. We highlight the similarities and peculiarities of the potentials for the two different types of charged matter and also focus our attention on the comparison between the particular aspects of two different field representations for spin-1 matter particles. We believe that our results may contribute to a further discussion of the relation between charge, spin, and extensibility of elementary particles.

Heat and spin interconversion

International Nuclear Information System (INIS)

Ohnuma, Yuichi; Matsuo, Mamoru; Maekawa, Sadamichi; Saitoh, Eeiji

2017-01-01

Spin Seebeck and spin Peltier effects, which are mutual conversion phenomena of heat and spin, are discussed on the basis of the microscopic theory. First, the spin Seebeck effect, which is the spin-current generation due to heat current, is discussed. The recent progress in research on the spin Seebeck effect are introduced. We explain the origin of the observed sign changes of the spin Seebeck effect in compensated ferromagnets. Next, the spin Peltier effect, which is the heat-current generation due to spin current, is discussed. Finally, we show that the spin Seebeck and spin Peltier effects are summarized by Onsager's reciprocal relation and derive Kelvin's relation for the spin and heat transports. (author)

Rotational Invariance of the 2d Spin - Spin Correlation Function

Science.gov (United States)

Pinson, Haru

2012-09-01

At the critical temperature in the 2d Ising model on the square lattice, we establish the rotational invariance of the spin-spin correlation function using the asymptotics of the spin-spin correlation function along special directions (McCoy and Wu in the two dimensional Ising model. Harvard University Press, Cambridge, 1973) and the finite difference Hirota equation for which the spin-spin correlation function is shown to satisfy (Perk in Phys Lett A 79:3-5, 1980; Perk in Proceedings of III international symposium on selected topics in statistical mechanics, Dubna, August 22-26, 1984, JINR, vol II, pp 138-151, 1985).

Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface

Science.gov (United States)

Hao, Runrun; Zhong, Hai; Kang, Yun; Tian, Yufei; Yan, Shishen; Liu, Guolei; Han, Guangbing; Yu, Shuyun; Mei, Liangmo; Kang, Shishou

2018-03-01

The spin transparency at the normal/ferromagnetic metal (NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect (SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect (ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents ({{\\boldsymbol{σ }}}sc}), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe20Ni80 (Py) than that of Ni is obtained from the nonlocal voltage measurements. Project supported by the National Basic Research Program of China (Grant No. 2015CB921502), the National Natural Science Foundation of China (Grant Nos. 11474184 and 11627805), the 111 Project, China (Grant No. B13029), and the Fundamental Research Funds of Shandong University, China.

Spin-lattice relaxation of individual solid-state spins

Science.gov (United States)

Norambuena, A.; Muñoz, E.; Dinani, H. T.; Jarmola, A.; Maletinsky, P.; Budker, D.; Maze, J. R.

2018-03-01

Understanding the effect of vibrations on the relaxation process of individual spins is crucial for implementing nanosystems for quantum information and quantum metrology applications. In this work, we present a theoretical microscopic model to describe the spin-lattice relaxation of individual electronic spins associated to negatively charged nitrogen-vacancy centers in diamond, although our results can be extended to other spin-boson systems. Starting from a general spin-lattice interaction Hamiltonian, we provide a detailed description and solution of the quantum master equation of an electronic spin-one system coupled to a phononic bath in thermal equilibrium. Special attention is given to the dynamics of one-phonon processes below 1 K where our results agree with recent experimental findings and analytically describe the temperature and magnetic-field scaling. At higher temperatures, linear and second-order terms in the interaction Hamiltonian are considered and the temperature scaling is discussed for acoustic and quasilocalized phonons when appropriate. Our results, in addition to confirming a T5 temperature dependence of the longitudinal relaxation rate at higher temperatures, in agreement with experimental observations, provide a theoretical background for modeling the spin-lattice relaxation at a wide range of temperatures where different temperature scalings might be expected.

Muon spin rotation and other microscopic probes of spin-glass dynamics

International Nuclear Information System (INIS)

MacLaughlin, D.E.

1980-01-01

A number of different microscopic probe techniques have been employed to investigate the onset of the spin-glass state in dilute magnetic alloys. Among these are Moessbauer-effect spectroscopy, neutron scattering, ESR of the impurity spins, host NMR and, most recently, muon spin rotation and depolarization. Spin probes yield information on the microscopic static and dynamic behavior of the impurity spins, and give insight into both the spin freezing process and the nature of low-lying excitations in the ordered state. Microscopic probe experiments in spin glasses are surveyed, and the unique advantages of muon studies are emphasized

Quantifying Spin Hall Angles from Spin Pumping : Experiments and Theory

NARCIS (Netherlands)

Mosendz, O.; Pearson, J.E.; Fradin, F.Y.; Bauer, G.E.W.; Bader, S.D.; Hoffmann, A.

2010-01-01

Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating Ni80Fe20|normal metal (N) bilayers into a coplanar

Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

Science.gov (United States)

Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure

KAUST Repository

Wang, Xuhui; Ortiz Pauyac, Christian; Manchon, Aurelien

2014-01-01

Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.

Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure

KAUST Repository

Wang, Xuhui

2014-02-07

Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.

Electron-Spin Filters Would Offer Spin Polarization Greater than 1

Science.gov (United States)

Ting, David Z.

2009-01-01

A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

Efficient micromagnetic modelling of spin-transfer torque and spin-orbit torque

Science.gov (United States)

Abert, Claas; Bruckner, Florian; Vogler, Christoph; Suess, Dieter

2018-05-01

While the spin-diffusion model is considered one of the most complete and accurate tools for the description of spin transport and spin torque, its solution in the context of dynamical micromagnetic simulations is numerically expensive. We propose a procedure to retrieve the free parameters of a simple macro-spin like spin-torque model through the spin-diffusion model. In case of spin-transfer torque the simplified model complies with the model of Slonczewski. A similar model can be established for the description of spin-orbit torque. In both cases the spin-diffusion model enables the retrieval of free model parameters from the geometry and the material parameters of the system. Since these parameters usually have to be determined phenomenologically through experiments, the proposed method combines the strength of the diffusion model to resolve material parameters and geometry with the high performance of simple torque models.

Spin Drag and Spin-Charge Separation in Cold Fermi Gases

International Nuclear Information System (INIS)

Polini, Marco; Vignale, Giovanni

2007-01-01

Low-energy spin and charge excitations of one-dimensional interacting fermions are completely decoupled and propagate with different velocities. These modes, however, can decay due to several possible mechanisms. In this Letter we expose a new facet of spin-charge separation: not only the speeds but also the damping rates of spin and charge excitations are different. While the propagation of long-wavelength charge excitations is essentially ballistic, spin propagation is intrinsically damped and diffusive. We suggest that cold Fermi gases trapped inside a tight atomic waveguide offer the opportunity to measure the spin-drag relaxation rate that controls the broadening of a spin packet

Spinning Them Off: Entrepreneuring Practices in Corporate Spin-Offs

Directory of Open Access Journals (Sweden)

Katja Maria Hydle

2016-01-01

Full Text Available This paper focuses on the practices between parent and child firms in corporate spinoffs. We uncover the enacted aspects of knowledge, called knowing, through theories from seven cases of incumbent-backed spin-offs and find that the management of the parent firms are highly involved in the spin-offs. The practices associated with spinning off are solving problems, involving multidisciplinary expertise and entrepreneuring management at the parent firm. We contribute to the spin-off literature by discussing the knowledge required for successfully spinning off child firms and to practice theory by empirically uncovering the practical understanding involved in the origin and perpetuation of an organization.

Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

Science.gov (United States)

Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

2017-09-01

In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

Enhanced Spin-Orbit Torque via Modulation of Spin Current Absorption

KAUST Repository

Qiu, Xuepeng

2016-11-18

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.

Excitation of coherent propagating spin waves by pure spin currents.

Science.gov (United States)

Demidov, Vladislav E; Urazhdin, Sergei; Liu, Ronghua; Divinskiy, Boris; Telegin, Andrey; Demokritov, Sergej O

2016-01-28

Utilization of pure spin currents not accompanied by the flow of electrical charge provides unprecedented opportunities for the emerging technologies based on the electron's spin degree of freedom, such as spintronics and magnonics. It was recently shown that pure spin currents can be used to excite coherent magnetization dynamics in magnetic nanostructures. However, because of the intrinsic nonlinear self-localization effects, magnetic auto-oscillations in the demonstrated devices were spatially confined, preventing their applications as sources of propagating spin waves in magnonic circuits using these waves as signal carriers. Here, we experimentally demonstrate efficient excitation and directional propagation of coherent spin waves generated by pure spin current. We show that this can be achieved by using the nonlocal spin injection mechanism, which enables flexible design of magnetic nanosystems and allows one to efficiently control their dynamic characteristics.

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

International Nuclear Information System (INIS)

Miah, M Idrish

2008-01-01

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-09-21

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs.

Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

Science.gov (United States)

Sasaki, Tomoyuki; Ando, Yuichiro; Kameno, Makoto; Tahara, Takayuki; Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Shiraishi, Masashi

2014-09-01

Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in nondegenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 μm and spin rotation greater than 4π at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

International Nuclear Information System (INIS)

Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

2010-01-01

The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

Anisotropic interactions of a single spin and dark-spin spectroscopy in diamond

Science.gov (United States)

Epstein, R. J.; Mendoza, F. M.; Kato, Y. K.; Awschalom, D. D.

2005-11-01

Experiments on single nitrogen-vacancy (N-V) centres in diamond, which include electron spin resonance, Rabi oscillations, single-shot spin readout and two-qubit operations with a nearby13C nuclear spin, show the potential of this spin system for solid-state quantum information processing. Moreover, N-V centre ensembles can have spin-coherence times exceeding 50 μs at room temperature. We have developed an angle-resolved magneto-photoluminescence microscope apparatus to investigate the anisotropic electron-spin interactions of single N-V centres at room temperature. We observe negative peaks in the photoluminescence as a function of both magnetic-field magnitude and angle that are explained by coherent spin precession and anisotropic relaxation at spin-level anti-crossings. In addition, precise field alignment unmasks the resonant coupling to neighbouring `dark' nitrogen spins, otherwise undetected by photoluminescence. These results demonstrate the capability of our spectroscopic technique for measuring small numbers of dark spins by means of a single bright spin under ambient conditions.

Spin-resolved electron waiting times in a quantum-dot spin valve

Science.gov (United States)

Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

2018-04-01

We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

Spin Filters as High-Performance Spin Polarimeters

International Nuclear Information System (INIS)

Rougemaille, N.; Lampel, G.; Peretti, J.; Drouhin, H.-J.; Lassailly, Y.; Filipe, A.; Wirth, T.; Schuhl, A.

2003-01-01

A spin-dependent transport experiment in which hot electrons pass through a ferromagnetic metal / semiconductor Schottky diode has been performed. A spin-polarized free-electron beam, emitted in vacuum from a GaAs photocathode, is injected into the thin metal layer with an energy between 5 and 1000 eV above to the Fermi level. The transmitted current collected in the semiconductor substrate increases with injection energy because of secondary - electron multiplication. The spin-dependent part of the transmitted current is first constant up to about 100 eV and then increases by 4 orders of magnitude. As an immediate application, the solid-state hybrid structure studied here leads to a very efficient and compact device for spin polarization detection

Spin transport in spin filtering magnetic tunneling junctions.

Science.gov (United States)

Li, Yun; Lee, Eok Kyun

2007-11-01

Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Resistance capability of microaerobic granular sludge for ...

African Journals Online (AJOL)

enoh

2012-02-08

Feb 8, 2012 ... The resistance capability to pH shock of microaerobic granular sludge for pentachlorophenol (PCP) ... process with chlorine gas in pulp and paper, leather and spinning ... nitrifying bacteria in the aerobic zone, and then trans-.

Spin polarization of tunneling current in barriers with spin-orbit coupling

International Nuclear Information System (INIS)

Fujita, T; Jalil, M B A; Tan, S G

2008-01-01

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

Spin polarization of tunneling current in barriers with spin-orbit coupling.

Science.gov (United States)

Fujita, T; Jalil, M B A; Tan, S G

2008-03-19

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

Science.gov (United States)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

DEFF Research Database (Denmark)

Javadi, Alisa; Ding, Dapeng; Appel, Martin Hayhurst

2018-01-01

Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates between photons [2,5] or to entangle remote spin states [6......-9]. Ultimately, a quantum network of entangled spins constitutes a new paradigm in quantum optics [1]. Towards this goal, an integrated spin-photon interface would be a major leap forward. Here we demonstrate an efficient and optically programmable interface between the spin of an electron in a quantum dot...... and photons in a nanophotonic waveguide. The spin can be deterministically prepared with a fidelity of 96\\%. Subsequently the system is used to implement a "single-spin photonic switch", where the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may...

Calorimetric evidence for localized spin fluctuations in UA12

International Nuclear Information System (INIS)

Trainor, R.J.; Brodsky, M.B.; Isaacs, L.L.

1974-01-01

Results of heat capacity measurements on UAl 2 between 1.8 and 400 0 K are presented. The data are compared with recent resistivity and susceptibility measurements which indicate the existence of localized spin fluctuations in a narrow 5f band. Below about 50 0 K the electronic contribution to the heat capacity becomes large, equivalent to γ approximately 70 mJ/mole-K 2 . Below 6 0 K there is an upturn in C/T which is proportional to T 2 log (T/T/sub SF/), where T/sub SF/ = 10.6 0 K is identified as the spin fluctuation temperature. Extrapolation of this term to zero temperature yields m*/m approximately 2 for the spin-fluctuation mass enhancement. At 300 0 K, UAl 2 exhibits more typical metallic behavior, with γ approximately 15 mJ/mole-K 2 . Data are also presented for nonmagnetic URh 3 ; at low temperatures C = γT + βT 3 , with γ = 14.5 mJ/mole-K 2 and β corresponding to theta/sub D/ = 336 0 K. (U.S.)

Thermal spin filtering effect and giant magnetoresistance of half-metallic graphene nanoribbon co-doped with non-metallic Nitrogen and Boron

Science.gov (United States)

Huang, Hai; Zheng, Anmin; Gao, Guoying; Yao, Kailun

2018-03-01

Ab initio calculations based on density functional theory and non-equilibrium Green's function are performed to investigate the thermal spin transport properties of single-hydrogen-saturated zigzag graphene nanoribbon co-doped with non-metallic Nitrogen and Boron in parallel and anti-parallel spin configurations. The results show that the doped graphene nanoribbon is a full half-metal. The two-probe system based on the doped graphene nanoribbon exhibits various excellent spin transport properties, including the spin-filtering effect, the spin Seebeck effect, the single-spin negative differential thermal resistance effect and the sign-reversible giant magnetoresistance feature. Excellently, the spin-filtering efficiency can reach nearly 100% in the parallel configuration and the magnetoresistance ratio can be up to -1.5 × 1010% by modulating the electrode temperature and temperature gradient. Our findings indicate that the metal-free doped graphene nanoribbon would be a promising candidate for spin caloritronic applications.

Spin symposium

Energy Technology Data Exchange (ETDEWEB)

Anon.

1989-01-15

The recent 8th International Symposium on High Energy Spin Physics at the University of Minnesota in Minneapolis, Minnesota, opened with a bang when L. Pondrom (Wisconsin), donning a hard hat borrowed from construction workers, ventured that 'spin, the notorious inessential complication of hadronic physics, is finally telling us what real QCD (quantum chromodynamics, the field theory of quarks and gluons) looks like.' He was referring to an animated discussion on the meaning of the recent spin oriented (polarized) scattering results from the European Muon Collaboration (EMC) at CERN and reported at the Symposium by R. Garnet (Liverpool) and P. Schuler (Yale) which show that the proton spin is not simply a reflection of the spins of its constituent quarks.

The kinematic differences between off-spin and leg-spin bowling in cricket.

Science.gov (United States)

Beach, Aaron J; Ferdinands, René E D; Sinclair, Peter J

2016-09-01

Spin bowling is generally coached using a standard technical framework, but this practice has not been based upon a comparative biomechanical analysis of leg-spin and off-spin bowling. This study analysed the three-dimensional (3D) kinematics of 23 off-spin and 20 leg-spin bowlers using a Cortex motion analysis system to identify how aspects of the respective techniques differed. A multivariate ANOVA found that certain data tended to validate some of the stated differences in the coaching literature. Off-spin bowlers had a significantly shorter stride length (p = 0.006) and spin rate (p = 0.001), but a greater release height than leg-spinners (p = 0.007). In addition, a number of other kinematic differences were identified that were not previously documented in coaching literature. These included a larger rear knee flexion (p = 0.007), faster approach speed (p < 0.001), and flexing elbow action during the arm acceleration compared with an extension action used by most of the off-spin bowlers. Off-spin and leg-spin bowlers also deviated from the standard coaching model for the shoulder alignment, front knee angle at release, and forearm mechanics. This study suggests that off-spin and leg-spin are distinct bowling techniques, supporting the development of two different coaching models in spin bowling.

Field-controlled spin current in frustrated spin chains

Directory of Open Access Journals (Sweden)

A.K. Kolezhuk

2009-01-01

Full Text Available We study states with spontaneous spin current, emerging in frustrated antiferromagnetic spin-S chains subject to a strong external magnetic field. As a numerical tool, we use a non-Abelian symmetry realization of the density matrix renormalization group. The field dependence of the order parameter and the critical exponents are presented for zigzag chains with S=1/2, 1, 3/2, and 2.

Nuclear spin content and constraints on exotic spin-dependent couplings

International Nuclear Information System (INIS)

Kimball, D F Jackson

2015-01-01

There are numerous recent and ongoing experiments employing a variety of atomic species to search for couplings of atomic spins to exotic fields. In order to meaningfully compare these experimental results, the coupling of the exotic field to the atomic spin must be interpreted in terms of the coupling to electron, proton, and neutron spins. Traditionally, constraints from atomic experiments on exotic couplings to neutron and proton spins have been derived using the single-particle Schmidt model for nuclear spin. In this model, particular atomic species are sensitive to either neutron or proton spin couplings, but not both. More recently, semi-empirical models employing nuclear magnetic moment data have been used to derive new constraints for non-valence nucleons. However, comparison of such semi-empirical models to detailed large-scale nuclear shell model calculations and analysis of known physical effects in nuclei show that existing semi-empirical models cannot reliably be used to predict the spin polarization of non-valence nucleons. The results of our re-analysis of nuclear spin content are applied to searches for exotic long-range monopole–dipole and dipole–dipole couplings of nuclei leading to significant revisions of some published constraints. (paper)

Spin injection into Pt-polymers with large spin-orbit coupling

Science.gov (United States)

Sun, Dali; McLaughlin, Ryan; Siegel, Gene; Tiwari, Ashutosh; Vardeny, Z. Valy

2014-03-01

Organic spintronics has entered a new era of devices that integrate organic light-emitting diodes (OLED) in organic spin valve (OSV) geometry (dubbed bipolar organic spin valve, or spin-OLED), for actively manipulating the device electroluminescence via the spin alignment of two ferromagnetic electrodes (Science 337, 204-209, 2012; Appl. Phys. Lett. 103, 042411, 2013). Organic semiconductors that contain heavy metal elements have been widely used as phosphorescent dopants in white-OLEDs. However such active materials are detrimental for OSV operation due to their large spin-orbit coupling (SOC) that may limit the spin diffusion length and thus spin-OLED based on organics with large SOC is a challenge. We report the successful fabrication of OSVs based on pi-conjugated polymers which contain intrachain Platinum atoms (dubbed Pt-polymers). Spin injection into the Pt-polymers is investigated by the giant magnetoresistance (GMR) effect as a function of bias voltage, temperature and polymer layer thickness. From the GMR bias voltage dependence we infer that the ``impendence mismatch'' between ferromagnetic electrodes and Pt-polymer may be suppressed due to the large SOC. Research sponsored by the NSF (Grant No. DMR-1104495) and NSF-MRSEC (DMR 1121252) at the University of Utah.

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

QED approach to the nuclear spin-spin coupling tensor

International Nuclear Information System (INIS)

Romero, Rodolfo H.; Aucar, Gustavo A.

2002-01-01

A quantum electrodynamical approach for the calculation of the nuclear spin-spin coupling tensor of nuclear-magnetic-resonance spectroscopy is given. Quantization of radiation fields within the molecule is considered and expressions for the magnetic field in the neighborhood of a nucleus are calculated. Using a generalization of time-dependent response theory, an effective spin-spin interaction is obtained from the coupling of nuclear magnetic moments to a virtual quantized magnetic field. The energy-dependent operators obtained reduce to usual classical-field expressions at suitable limits

Realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Ling, Xiaohui [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421002 (China); Yi, Xunong [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Zhou, Xinxing; Liu, Yachao; Shu, Weixing; Wen, Shuangchun [Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Luo, Hailu, E-mail: hailuluo@hnu.edu.cn [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China)

2014-10-13

We report the realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect. By breaking the rotational symmetry of a cylindrical vector beam, the intrinsic vortex phases that the two spin components of the vector beam carries, which is similar to the geometric Pancharatnam-Berry phase, are no longer continuous in the azimuthal direction, and leads to observation of spin accumulation at the opposite edge of the beam. Due to the inherent nature of the phase and independency of light-matter interaction, the observed photonic spin Hall effect is intrinsic. Modulating the topological charge of the vector beam, the spin-dependent splitting can be enhanced and the direction of spin accumulation is switchable. Our findings may provide a possible route for generation and manipulation of spin-polarized photons, and enables spin-based photonics applications.

Spin-flip and spin orbit interactions in heavy ion systems

International Nuclear Information System (INIS)

Bybell, D.P.

1983-01-01

The role of spin orbit forces in heavy ion reactions is not completely understood. Experimental data is scarce for these systems but the data that does exist indicates a stronger spin orbit force than predicted by the folding models. The spin-flip probability of non-spin zero projectiles is one technique used for these measurements and is often taken as a direct indicator of a spin orbit interaction. This work measures the projectile spin-flip probability for three inelastic reactions; 13 C + 24 Mg, E/sub cm/ = 22.7 MeV; 13 C + 12 C, E/sub cm/ = 17.3 MeV; and 6 Li + 12 C, E/sub cm/ = 15.2 MeV, all leading to the first J/sup π/ = 2 + state of the target. The technique of particle-γ angular correlations was used for measuring the final state density matrix elements, of which the absolute value M = 1 magnetic substate population is equivalent to the spin-flip probability. The method was explored in detail and found to be sensitive to spin-flip probabilities smaller than 1%. The technique was also found to be a good indicator of the reaction mechanism involved. Nonzero and occasionally large spin-flip probabilities were observed in all systems, much larger than the folding model predictions. Information was obtained on the non-spin-flip density matrix elements. In the 13 C + 24 Mg reaction, these were found to agree with calculations when the finite size of the particle detector is included

Magnetic proximity control of spin currents and giant spin accumulation in graphene

Science.gov (United States)

Singh, Simranjeet

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

KAUST Repository

Li, Lailai

2017-10-04

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

Science.gov (United States)

Hung, Yu-Ming

This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

2014-02-03

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

International Nuclear Information System (INIS)

Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

2014-01-01

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

Graphene: A membrane with steadily improving charge and spin transport properties

Science.gov (United States)

Beschoten, Bernd

Long electron spin lifetimes are an important prerequisite for enabling advanced spintronic devices. In this respect the 1-ns benchmark is of high technological interest as it marks the threshold at which manipulation of spins with electrical high frequency technology becomes feasible (1 ns 1 GHz). For a long time, the measured spin lifetimes were shorter than 1 ns. Here we report on a major improvement in device fabrication which pushes the spin lifetimes to 12.6 ns in single layer graphene spin transport devices at room temperature which results in spin diffusion lengths as long as 30.5 μm. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO2 substrate and the subsequent dry transfer of a graphene/hexagonal boron nitride (hBN) stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingress of solvents along the hBN-to-substrate interface. We demonstrate that the spin lifetime does not depend on the contact resistance area products in these devices, indicating that spin absorption at the contacts is not the predominant source for spin dephasing which may pave the way towards probing intrinsic spin properties of graphene. In the second part, we summarize our effort to replace natural by synthetically grown graphene. We report on an advanced transfer technique that allows both reusing the copper substrate of the CVD graphene growth process and making devices with carrier mobilities as high as three million cm2/(Vs) thus rivaling exfoliated ''natural'' graphene. This material quality allows truly ballistic experiments with electron mean free paths exceeding 28 μm which brings novel electron-optic devices into reach. In collaboration with M. Drögeler, C. Franzen, F. Volmer, L. Banszerus, M. Schmitz, S. Engels, J. Dauber, M. Goldsche, M. Oellers, T. Pohlmann, M. Wolter, F. Haupt, K. Watanabe, T. Taniguchi, and C. Stampfer.

Induction-detection electron spin resonance with spin sensitivity of a few tens of spins

Energy Technology Data Exchange (ETDEWEB)

Artzi, Yaron; Twig, Ygal; Blank, Aharon [Schulich Faculty of Chemistry Technion—Israel Institute of Technology, Haifa 32000 (Israel)

2015-02-23

Electron spin resonance (ESR) is a spectroscopic method that addresses electrons in paramagnetic materials directly through their spin properties. ESR has many applications, ranging from semiconductor characterization to structural biology and even quantum computing. Although it is very powerful and informative, ESR traditionally suffers from low sensitivity, requiring many millions of spins to get a measureable signal with commercial systems using the Faraday induction-detection principle. In view of this disadvantage, significant efforts were made recently to develop alternative detection schemes based, for example, on force, optical, or electrical detection of spins, all of which can reach single electron spin sensitivity. This sensitivity, however, comes at the price of limited applicability and usefulness with regard to real scientific and technological issues facing modern ESR which are currently dealt with conventional induction-detection ESR on a daily basis. Here, we present the most sensitive experimental induction-detection ESR setup and results ever recorded that can detect the signal from just a few tens of spins. They were achieved thanks to the development of an ultra-miniature micrometer-sized microwave resonator that was operated at ∼34 GHz at cryogenic temperatures in conjunction with a unique cryogenically cooled low noise amplifier. The test sample used was isotopically enriched phosphorus-doped silicon, which is of significant relevance to spin-based quantum computing. The sensitivity was experimentally verified with the aid of a unique high-resolution ESR imaging approach. These results represent a paradigm shift with respect to the capabilities and possible applications of induction-detection-based ESR spectroscopy and imaging.

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

Institute of Scientific and Technical Information of China (English)

赵云驰; 杨光; 董博闻; 王守国; 王超; 孙阳; 张静言; 于广华

2016-01-01

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current, respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.

Nuclear spin-lattice relaxation in nitroxide spin-label EPR.

Science.gov (United States)

Marsh, Derek

2016-11-01

Nuclear relaxation is a sensitive monitor of rotational dynamics in spin-label EPR. It also contributes competing saturation transfer pathways in T 1 -exchange spectroscopy, and the determination of paramagnetic relaxation enhancement in site-directed spin labelling. A survey shows that the definition of nitrogen nuclear relaxation rate W n commonly used in the CW-EPR literature for 14 N-nitroxyl spin labels is inconsistent with that currently adopted in time-resolved EPR measurements of saturation recovery. Redefinition of the normalised 14 N spin-lattice relaxation rate, b=W n /(2W e ), preserves the expressions used for CW-EPR, whilst rendering them consistent with expressions for saturation recovery rates in pulsed EPR. Furthermore, values routinely quoted for nuclear relaxation times that are deduced from EPR spectral diffusion rates in 14 N-nitroxyl spin labels do not accord with conventional analysis of spin-lattice relaxation in this three-level system. Expressions for CW-saturation EPR with the revised definitions are summarised. Data on nitrogen nuclear spin-lattice relaxation times are compiled according to the three-level scheme for 14 N-relaxation: T 1 n =1/W n . Results are compared and contrasted with those for the two-level 15 N-nitroxide system. Copyright © 2016 Elsevier Inc. All rights reserved.

Spin injection and detection in lateral spin valves with hybrid interfaces

Science.gov (United States)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Spin dynamics under local gauge fields in chiral spin-orbit coupling systems

International Nuclear Information System (INIS)

Tan, S.G.; Jalil, M.B.A.; Fujita, T.; Liu, X.J.

2011-01-01

Research highlights: → We derive a modified LLG equation in magnetic systems with spin-orbit coupling (SOC). → Our results are applied to magnetic multilayers, and DMS and magnetic Rashba systems. → SOC mediated magnetization switching is predicted in rare earth metals (large SOC). → The magnetization trajectory and frequency can be modulated by applied voltage. → This facilitates potential application as tunable microwave oscillators. - Abstract: We present a theoretical description of local spin dynamics in magnetic systems with a chiral spin texture and finite spin-orbit coupling (SOC). Spin precession about the relativistic effective magnetic field in a SOC system gives rise to a non-Abelian SU(2) gauge field reminiscent of the Yang-Mills field. In addition, the adiabatic relaxation of electron spin along the local spin yields an U(1) x U(1) topological gauge (Berry) field. We derive the corresponding equation of motion i.e. modified Landau-Lifshitz-Gilbert (LLG) equation, for the local spin under the influence of these effects. Focusing on the SU(2) gauge, we obtain the spin torque magnitude, and the amplitude and frequency of spin oscillations in this system. Our theoretical estimates indicate significant spin torque and oscillations in systems with large spin-orbit coupling, which may be utilized in technological applications such as current-induced magnetization-switching and tunable microwave oscillators.

Spin correlations and spin-wave excitations in Dirac-Weyl semimetals

Science.gov (United States)

Araki, Yasufumi; Nomura, Kentaro

We study correlations among magnetic dopants in three-dimensional Dirac and Weyl semimetals. Effective field theory for localized magnetic moments is derived by integrating out the itinerant electron degrees of freedom. We find that spin correlation in the spatial direction parallel to local magnetization is more rigid than that in the perpendicular direction, reflecting spin-momentum locking nature of the Dirac Hamiltonian. Such an anisotropy becomes stronger for Fermi level close to the Dirac points, due to Van Vleck paramagnetism triggered by spin-orbit coupling. One can expect topologically nontrivial spin textures under this anisotropy, such as a hedgehog around a single point, or a radial vortex around an axis, as well as a uniform ferromagnetic order. We further investigate the characteristics of spin waves in the ferromagnetic state. Spin-wave dispersion also shows a spatial anisotropy, which is less dispersed in the direction transverse to the magnetization than that in the longitudinal direction. The spin-wave dispersion anisotropy can be traced back to the rigidity and flexibility of spin correlations discussed above. This work was supported by Grant-in-Aid for Scientific Research (Grants No.15H05854, No.26107505, and No.26400308) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

Spin-spin cross relaxation and spin-Hamiltonian spectroscopy by optical pumping of Pr/sup 3+/:LaF3

International Nuclear Information System (INIS)

Lukac, M.; Otto, F.W.; Hahn, E.L.

1989-01-01

We report the observation of an anticrossing in solid-state laser spectroscopy produced by cross relaxation. Spin-spin cross relaxation between the /sup 141/Pr- and /sup 19/F-spin reservoirs in Pr/sup 3+/:LaF 3 and its influence on the /sup 141/Pr NMR spectrum is detected by means of optical pumping. The technique employed combines optical pumping and hole burning with either external magnetic field sweep or rf resonance saturation in order to produce slow transient changes in resonant laser transmission. At a certain value of the external Zeeman field, where the energy-level splittings of Pr and F spins match, a level repulsion and discontinuity of the Pr/sup 3+/ NMR lines is observed. This effect is interpreted as the ''anticrossing'' of the combined Pr-F spin-spin reservoir energy states. The Zeeman-quadrupole-Hamiltonian spectrum of the hyperfine optical ground states of Pr/sup 3+/:LaF 3 is mapped out over a wide range of Zeeman magnetic fields. A new scheme is proposed for dynamic polarization of nuclei by means of optical pumping, based on resonant cross relaxation between rare spins and spin reservoirs

Bipolar spintronics: from spin injection to spin-controlled logic

International Nuclear Information System (INIS)

Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

2007-01-01

An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

Inverse spin-valve effect in nanoscale Si-based spin-valve devices

Science.gov (United States)

Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

2017-12-01

We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

Spin waves and spin instabilities in quantum plasmas

OpenAIRE

Andreev, P. A.; Kuz'menkov, L. S.

2014-01-01

We describe main ideas of method of many-particle quantum hydrodynamics allows to derive equations for description of quantum plasma evolution. We also present definitions of collective quantum variables suitable for quantum plasmas. We show that evolution of magnetic moments (spins) in quantum plasmas leads to several new branches of wave dispersion: spin-electromagnetic plasma waves and self-consistent spin waves. Propagation of neutron beams through quantum plasmas is also considered. Inst...

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien; Matsumoto, R.; Jaffres, H.; Grollier, J.

2012-01-01

in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque

Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

International Nuclear Information System (INIS)

Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

2015-01-01

We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

Spin transport in nanowires

OpenAIRE

Pramanik, S.; bandyopadhyay, S.; Cahay, M.

2003-01-01

We study high-field spin transport of electrons in a quasi one-dimensional channel of a $GaAs$ gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport equation). Spin dephasing (or depolarization) is predominantly caused by D'yakonov-Perel' relaxation associated with momentum dependent spin orbit coupling effects that arise due to bulk inversion asymmetry (Dresselhaus spin orbit coupling) and structural inve...

Nuclear spin-lattice relaxation in nitroxide spin-label EPR

DEFF Research Database (Denmark)

Marsh, Derek

2016-01-01

that the definition of nitrogen nuclear relaxation rate Wn commonly used in the CW-EPR literature for 14N-nitroxyl spin labels is inconsistent with that currently adopted in time-resolved EPR measurements of saturation recovery. Redefinition of the normalised 14N spin-lattice relaxation rate, b = Wn/(2We), preserves...... of spin-lattice relaxation in this three-level system. Expressions for CW-saturation EPR with the revised definitions are summarised. Data on nitrogen nuclear spin-lattice relaxation times are compiled according to the three-level scheme for 14N-relaxation: T1 n = 1/Wn. Results are compared and contrasted...

In situ photoelectron spectroscopy of LaMnO3 and La0.6Sr0.4MnO3 thin films grown by laser molecular beam expitaxy

International Nuclear Information System (INIS)

Oshima, M.; Kobayashi, D.; Horiba, K.; Ohguchi, H.; Kumigashira, H.; Ono, K.; Nakagawa, N.; Lippmaa, M.; Kawasaki, M.; Koinuma, H.

2004-01-01

We have constructed a high-resolution photoelectron spectroscopy system combined with a laser molecular beam epitaxy (laser-MBE) chamber and have characterized composition-controlled La 1-x Sr x MnO 3 (LSMO) thin films. The importance of atomically flat surfaces by in situ photoelectron spectroscopy for revealing the intrinsic electronic structures has been demonstrated by comparing O1s, O2s and valence band spectra from the laser-MBE-grown LaMnO 3 and LSMO films with those from the scraped samples. Even for the laser-MBE-grown LSMO films, core levels and band structure exhibit strong dependence on surface morphology. For atomically flat LSMO films, we have also elucidated the hole-doping features into Mn3d e g band by substituting La with Sr by resonant photoelectron spectra

Spin squeezing of atomic ensembles via nuclear-electronic spin entanglement

DEFF Research Database (Denmark)

Fernholz, Thomas; Krauter, Hanna; Jensen, Kasper

2008-01-01

quantum limit for quantum memory experiments and applications in quantum metrology and is thus a complementary alternative to spin squeezing obtained via inter-atom entanglement. Squeezing of the collective spin is verified by quantum state tomography.......We demonstrate spin squeezing in a room temperature ensemble of 1012 Cesium atoms using their internal structure, where the necessary entanglement is created between nuclear and electronic spins of each individual atom. This state provides improvement in measurement sensitivity beyond the standard...

Phase transitions and thermal entanglement of the distorted Ising-Heisenberg spin chain: topology of multiple-spin exchange interactions in spin ladders

Science.gov (United States)

Arian Zad, Hamid; Ananikian, Nerses

2017-11-01

We consider a symmetric spin-1/2 Ising-XXZ double sawtooth spin ladder obtained from distorting a spin chain, with the XXZ interaction between the interstitial Heisenberg dimers (which are connected to the spins based on the legs via an Ising-type interaction), the Ising coupling between nearest-neighbor spins of the legs and rungs spins, respectively, and additional cyclic four-spin exchange (ring exchange) in the square plaquette of each block. The presented analysis supplemented by results of the exact solution of the model with infinite periodic boundary implies a rich ground state phase diagram. As well as the quantum phase transitions, the characteristics of some of the thermodynamic parameters such as heat capacity, magnetization and magnetic susceptibility are investigated. We prove here that among the considered thermodynamic and thermal parameters, solely heat capacity is sensitive versus the changes of the cyclic four-spin exchange interaction. By using the heat capacity function, we obtain a singularity relation between the cyclic four-spin exchange interaction and the exchange coupling between pair spins on each rung of the spin ladder. All thermal and thermodynamic quantities under consideration should be investigated by regarding those points which satisfy the singularity relation. The thermal entanglement within the Heisenberg spin dimers is investigated by using the concurrence, which is calculated from a relevant reduced density operator in the thermodynamic limit.

Evidence for power-law spin-correlation decay from muon spin relaxation in AgMn spin-glass

International Nuclear Information System (INIS)

MacLaughlin, D.E.; Gupta, L.C.; Cooke, D.W.; Heffner, R.H.; Leon, M.; Schillaci, M.E.

1983-01-01

Muon spin relaxation measurements have been carried out below the ''glass'' temperature T/sub g/ in AgMn spin-glasses. The muon spin-lattice relaxation rate varies with field H as H/sup -0.46plus-or-minus0.05/ for 0.30< or =T/T/sub g/< or =0.66. This suggests that impurity-spin correlations decay with time as t/sup -nu/, νapprox. =0.54 +- 0.05, in contrast to the more usual exponential decay. The present data therefore agree quantitatively with the prediction νapprox. =(1/2) of mean-field dynamic theories

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Max Auwaerter symposium: spin mapping and spin manipulation on the atomic scale

International Nuclear Information System (INIS)

Wiesendanger, R.

2008-01-01

Full text: A fundamental understanding of magnetic and spin-dependent phenomena requires the determination of spin structures and spin excitations down to the atomic scale. The direct visualization of atomic-scale spin structures has first been accomplished for magnetic metals by combining the atomic resolution capability of Scanning Tunnelling Microscopy (STM) with spin sensitivity, based on vacuum tunnelling of spin-polarized electrons. The resulting technique, Spin-Polarized Scanning Tunnelling Microscopy (SP-STM), nowadays provides unprecedented insight into collinear and non-collinear spin structures at surfaces of magnetic nanostructures and has already led to the discovery of new types of magnetic order at the nanoscale. More recently, the development of subkelvin SP-STM has allowed studies of ground-state magnetic properties of individual magnetic adatoms on non-magnetic substrates as well as the magnetic interactions between them. Based on SP-STM experiments performed at temperatures of 300 mK, indirect magnetic exchange interactions at the sub-milli-electronvolt energy scale between individual paramagnetic adatoms as well as between adatoms and nearby magnetic nanostructures could directly be revealed in real space up to distances of several nanometers. In both cases we have observed an oscillatory behavior of the magnetic exchange coupling, alternating between ferromagnetic and antiferromagnetic, as a function of distance. Moreover, the detection of spin-dependent exchange and correlation forces has allowed a first direct real-space observation of spin structures at surfaces of antiferromagnetic insulators. This new type of scanning probe microscopy, called Magnetic Exchange Force Microscopy (MExFM), offers a powerful new tool to investigate different types of spin-spin interactions based on direct-, super-, or RKKY-type exchange down to the atomic level. By combining MExFM with high-precision measurements of damping forces, localized or confined spin

Role of spin mixing conductance in spin pumping: Enhancement of spin pumping efficiency in Ta/Cu/Py structures

Energy Technology Data Exchange (ETDEWEB)

Deorani, Praveen; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (Singapore)

2013-12-02

From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021–0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of non-magnet/ferromagnet interface by adding a Cu interlayer. The experimental results show that the effective spin mixing conductance increases in the presence of Cu interlayer for Ta/Cu/Py devices whereas it decreases in Pt/Cu/Py devices. Our findings allow the tunability of the spin pumping efficiency by adding a thin interlayer at the non-magnet/ferromagnet interface.

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

KAUST Repository

Li, Lailai; Zhao, Yuelei; Zhang, Xixiang; Sun, Young

2017-01-01

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin

Spin Coherence in Semiconductor Nanostructures

National Research Council Canada - National Science Library

Flatte, Michael E

2006-01-01

... dots, tuning of spin coherence times for electron spin, tuning of dipolar magnetic fields for nuclear spin, spontaneous spin polarization generation and new designs for spin-based teleportation and spin transistors...

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

Science.gov (United States)

Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M. D.

2017-09-01

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.

High frequency spin torque oscillators with composite free layer spin valve

International Nuclear Information System (INIS)

Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

2016-01-01

We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

High frequency spin torque oscillators with composite free layer spin valve

Energy Technology Data Exchange (ETDEWEB)

Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

2016-07-15

We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

Spin glasses

CERN Document Server

Bovier, Anton

2007-01-01

Spin glass theory is going through a stunning period of progress while finding exciting new applications in areas beyond theoretical physics, in particular in combinatorics and computer science. This collection of state-of-the-art review papers written by leading experts in the field covers the topic from a wide variety of angles. The topics covered are mean field spin glasses, including a pedagogical account of Talagrand's proof of the Parisi solution, short range spin glasses, emphasizing the open problem of the relevance of the mean-field theory for lattice models, and the dynamics of spin glasses, in particular the problem of ageing in mean field models. The book will serve as a concise introduction to the state of the art of spin glass theory, usefull to both graduate students and young researchers, as well as to anyone curious to know what is going on in this exciting area of mathematical physics.

Investigation of doping and particle size effect on structural, magnetic and magnetoresistance properties of manganites

Directory of Open Access Journals (Sweden)

M. Hakimi

2008-06-01

Full Text Available  In this paper after introduction of manganites, we have studied the effect of particle size and doping on structural, magnetic and magnetoresistance of LSMO manganite samples. The magnetoresistance measurements show that, by decreasing the particle size LFMR increases. Also the results show that the LFMR increases at low doping levels and decreases at high doping levels. The spin dependent tunneling and scattering at the grain boundaries is the origin of increasing the LFMR at low doping levels. Also the substitution of impurity ions at Mn sites and subsequently weaking of double exchange is responsible for decreasing of LFMR at high doping level.

Calculation of nuclear spin-spin coupling constants using frozen density embedding

Energy Technology Data Exchange (ETDEWEB)

Götz, Andreas W., E-mail: agoetz@sdsc.edu [San Diego Supercomputer Center, University of California San Diego, 9500 Gilman Dr MC 0505, La Jolla, California 92093-0505 (United States); Autschbach, Jochen [Department of Chemistry, University at Buffalo, State University of New York, Buffalo, New York 14260-3000 (United States); Visscher, Lucas, E-mail: visscher@chem.vu.nl [Amsterdam Center for Multiscale Modeling (ACMM), VU University Amsterdam, Theoretical Chemistry, De Boelelaan 1083, 1081 HV Amsterdam (Netherlands)

2014-03-14

We present a method for a subsystem-based calculation of indirect nuclear spin-spin coupling tensors within the framework of current-spin-density-functional theory. Our approach is based on the frozen-density embedding scheme within density-functional theory and extends a previously reported subsystem-based approach for the calculation of nuclear magnetic resonance shielding tensors to magnetic fields which couple not only to orbital but also spin degrees of freedom. This leads to a formulation in which the electron density, the induced paramagnetic current, and the induced spin-magnetization density are calculated separately for the individual subsystems. This is particularly useful for the inclusion of environmental effects in the calculation of nuclear spin-spin coupling constants. Neglecting the induced paramagnetic current and spin-magnetization density in the environment due to the magnetic moments of the coupled nuclei leads to a very efficient method in which the computationally expensive response calculation has to be performed only for the subsystem of interest. We show that this approach leads to very good results for the calculation of solvent-induced shifts of nuclear spin-spin coupling constants in hydrogen-bonded systems. Also for systems with stronger interactions, frozen-density embedding performs remarkably well, given the approximate nature of currently available functionals for the non-additive kinetic energy. As an example we show results for methylmercury halides which exhibit an exceptionally large shift of the one-bond coupling constants between {sup 199}Hg and {sup 13}C upon coordination of dimethylsulfoxide solvent molecules.

Magnetically tunable alternating current electrical properties of x La0.7Sr0.3MnO3–(1 − x) ErMnO3 (x = 0.1, 0.3, and 0.5) multiferroic nanocomposite

International Nuclear Information System (INIS)

Debnath, Rajesh; Dey, P.; Singh, Swati; Roy, J. N.; Mandal, S. K.; Nath, T. K.

2015-01-01

Detailed magnetically tunable ac electrical properties of x La 0.7 Sr 0.3 MnO 3 (LSMO)–(1 − x) ErMnO 3 (EMO) (x = 0.1, 0.3, and 0.5) multiferroic nanocomposites have been studied at 300 K in presence of varying magnetic field (H appl ), applied both in parallel and perpendicular configuration with respect to the measuring electric field. AC electrical properties have exhibited significant variation with H appl for all composites, whereas for parallel configuration of H appl such effect is very feeble for x = 0.3 composite. We have attributed this anisotropic behavior to the demagnetization effect in the sample. In contrast, for x = 0.1 and 0.5 composites, no such anisotropy effect is experimentally evidenced. Impedance and real part of impedance have been found to decrease with H appl at low frequency (f) region. We attribute this observation to the depinning of the magnetic domain walls from the grain boundaries pinning centers and thereby enhancing the spin dependent transport in the composite. For x = 0.3 composite, Nyquist plots have been fitted considering dominant contributions of LSMO and EMO grain boundaries and the interface region between them. However, for x = 0.1 composite, it corresponds to EMO grain boundaries and grain boundary interface region. The relaxation frequency (f R ) is observed to shift at higher/lower f region in perpendicular/parallel configuration of H appl for x = 0.3 composite. This opposite variation of f R s with H appl for perpendicular and parallel configurations has been attributed to two competing factors of H appl induced enhancement of inductive part and H appl enhanced spin dependent transport causing fast relaxation processes in the sample. For x = 0.1 composite, in both configurations of H appl , f R s is shifting towards high f region, which has been discussed in terms of dominant role of spin dependent transport

Magnetically tunable alternating current electrical properties of x La{sub 0.7}Sr{sub 0.3}MnO{sub 3}–(1 − x) ErMnO{sub 3} (x = 0.1, 0.3, and 0.5) multiferroic nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Debnath, Rajesh; Dey, P.; Singh, Swati; Roy, J. N.; Mandal, S. K., E-mail: saniitkgp2007@gmail.com [Department of Physics, National Institute of Technology Agartala, Tripura 799046 (India); Nath, T. K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal (India)

2015-07-28

Detailed magnetically tunable ac electrical properties of x La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO)–(1 − x) ErMnO{sub 3} (EMO) (x = 0.1, 0.3, and 0.5) multiferroic nanocomposites have been studied at 300 K in presence of varying magnetic field (H{sub appl}), applied both in parallel and perpendicular configuration with respect to the measuring electric field. AC electrical properties have exhibited significant variation with H{sub appl} for all composites, whereas for parallel configuration of H{sub appl} such effect is very feeble for x = 0.3 composite. We have attributed this anisotropic behavior to the demagnetization effect in the sample. In contrast, for x = 0.1 and 0.5 composites, no such anisotropy effect is experimentally evidenced. Impedance and real part of impedance have been found to decrease with H{sub appl} at low frequency (f) region. We attribute this observation to the depinning of the magnetic domain walls from the grain boundaries pinning centers and thereby enhancing the spin dependent transport in the composite. For x = 0.3 composite, Nyquist plots have been fitted considering dominant contributions of LSMO and EMO grain boundaries and the interface region between them. However, for x = 0.1 composite, it corresponds to EMO grain boundaries and grain boundary interface region. The relaxation frequency (f{sub R}) is observed to shift at higher/lower f region in perpendicular/parallel configuration of H{sub appl} for x = 0.3 composite. This opposite variation of f{sub R}s with H{sub appl} for perpendicular and parallel configurations has been attributed to two competing factors of H{sub appl} induced enhancement of inductive part and H{sub appl} enhanced spin dependent transport causing fast relaxation processes in the sample. For x = 0.1 composite, in both configurations of H{sub appl}, f{sub R}s is shifting towards high f region, which has been discussed in terms of dominant role of spin dependent transport.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Sander, Dirk, E-mail: sander@mpi-halle.de [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany); Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany)

2013-08-15

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Sander, Dirk; Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen

2013-01-01

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center

Quantum spin correction scheme based on spin-correlation functional for Kohn-Sham spin density functional theory

International Nuclear Information System (INIS)

Yamanaka, Shusuke; Takeda, Ryo; Nakata, Kazuto; Takada, Toshikazu; Shoji, Mitsuo; Kitagawa, Yasutaka; Yamaguchi, Kizashi

2007-01-01

We present a simple quantum correction scheme for ab initio Kohn-Sham spin density functional theory (KS-SDFT). This scheme is based on a mapping from ab initio results to a Heisenberg model Hamiltonian. The effective exchange integral is estimated by using energies and spin correlation functionals calculated by ab initio KS-SDFT. The quantum-corrected spin-correlation functional is open to be designed to cover specific quantum spin fluctuations. In this article, we present a simple correction for dinuclear compounds having multiple bonds. The computational results are discussed in relation to multireference (MR) DFT, by which we treat the quantum many-body effects explicitly

Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

KAUST Repository

Ndiaye, Papa Birame

2017-10-31

In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are

Dynamic nuclear spin polarization

Energy Technology Data Exchange (ETDEWEB)

Stuhrmann, H B [GKSS-Forschungszentrum Geesthacht GmbH (Germany)

1996-11-01

Polarized neutron scattering from dynamic polarized targets has been applied to various hydrogenous materials at different laboratories. In situ structures of macromolecular components have been determined by nuclear spin contrast variation with an unprecedented precision. The experiments of selective nuclear spin depolarisation not only opened a new dimension to structural studies but also revealed phenomena related to propagation of nuclear spin polarization and the interplay of nuclear polarisation with the electronic spin system. The observation of electron spin label dependent nuclear spin polarisation domains by NMR and polarized neutron scattering opens a way to generalize the method of nuclear spin contrast variation and most importantly it avoids precontrasting by specific deuteration. It also likely might tell us more about the mechanism of dynamic nuclear spin polarisation. (author) 4 figs., refs.

Nuclear spin polarized H and D by means of spin-exchange optical pumping

Science.gov (United States)

Stenger, Jörn; Grosshauser, Carsten; Kilian, Wolfgang; Nagengast, Wolfgang; Ranzenberger, Bernd; Rith, Klaus; Schmidt, Frank

1998-01-01

Optically pumped spin-exchange sources for polarized hydrogen and deuterium atoms have been demonstrated to yield high atomic flow and high electron spin polarization. For maximum nuclear polarization the source has to be operated in spin temperature equilibrium, which has already been demonstrated for hydrogen. In spin temperature equilibrium the nuclear spin polarization PI equals the electron spin polarization PS for hydrogen and is even larger than PS for deuterium. We discuss the general properties of spin temperature equilibrium for a sample of deuterium atoms. One result are the equations PI=4PS/(3+PS2) and Pzz=PSṡPI, where Pzz is the nuclear tensor polarization. Furthermore we demonstrate that the deuterium atoms from our source are in spin temperature equilibrium within the experimental accuracy.

Spin-Dependent Transport through Chiral Molecules Studied by Spin-Dependent Electrochemistry

Science.gov (United States)

2016-01-01

Conspectus Molecular spintronics (spin + electronics), which aims to exploit both the spin degree of freedom and the electron charge in molecular devices, has recently received massive attention. Our recent experiments on molecular spintronics employ chiral molecules which have the unexpected property of acting as spin filters, by way of an effect we call “chiral-induced spin selectivity” (CISS). In this Account, we discuss new types of spin-dependent electrochemistry measurements and their use to probe the spin-dependent charge transport properties of nonmagnetic chiral conductive polymers and biomolecules, such as oligopeptides, L/D cysteine, cytochrome c, bacteriorhodopsin (bR), and oligopeptide-CdSe nanoparticles (NPs) hybrid structures. Spin-dependent electrochemical measurements were carried out by employing ferromagnetic electrodes modified with chiral molecules used as the working electrode. Redox probes were used either in solution or when directly attached to the ferromagnetic electrodes. During the electrochemical measurements, the ferromagnetic electrode was magnetized either with its magnetic moment pointing “UP” or “DOWN” using a permanent magnet (H = 0.5 T), placed underneath the chemically modified ferromagnetic electrodes. The spin polarization of the current was found to be in the range of 5–30%, even in the case of small chiral molecules. Chiral films of the l- and d-cysteine tethered with a redox-active dye, toludin blue O, show spin polarizarion that depends on the chirality. Because the nickel electrodes are susceptible to corrosion, we explored the effect of coating them with a thin gold overlayer. The effect of the gold layer on the spin polarization of the electrons ejected from the electrode was investigated. In addition, the role of the structure of the protein on the spin selective transport was also studied as a function of bias voltage and the effect of protein denaturation was revealed. In addition to �

Cross-plane Thermoelectric Transport in p-type La0.67Sr0.33MnO3/LaMnO3 Oxide Metal/Semiconductor Superlattices

Science.gov (United States)

2013-12-07

fre- quency of 5 Hz, and temperature maintained at 750 C measured using an infrared pyrometer (STO emissivity of 0.8). The target was mechanically...thermoelectric transport Thermal conductivity of LSMO/LMO superlattices was measured using a photo- acoustic (PA) technique.18,19 The high resistivity...multilayer material,” J. Appl. Phys. 86(7), 3953 (1999). 19X. W. Wang, H. P. Hu, and X. F. Xu, “Photo- acoustic measurement of thermal conductivity of

Spin relaxation in quantum dots: Role of the phonon modulated spin-orbit interaction

Science.gov (United States)

Alcalde, A. M.; Romano, C. L.; Sanz, L.; Marques, G. E.

2010-01-01

We calculate the spin relaxation rates in a parabolic InSb quantum dots due to the spin interaction with acoustical phonons. We considered the deformation potential mechanism as the dominant electron-phonon coupling in the Pavlov-Firsov spin-phonon Hamiltonian. We analyze the behavior of the spin relaxation rates as a function of an external magnetic field and mean quantum dot radius. Effects of the spin admixture due to Dresselhaus contribution to spin-orbit interaction are also discussed.

Analysis of the partially filled viscous ring damper. [application as nutation damper for spinning satellite

Science.gov (United States)

Alfriend, K. T.

1973-01-01

A ring partially filled with a viscous fluid has been analyzed as a nutation damper for a spinning satellite. The fluid has been modelled as a rigid slug of finite length moving in a tube and resisted by a linear viscous force. It is shown that there are two distinct modes of motion, called the spin synchronous mode and the nutation synchronous mode. Time constants for each mode are obtained for both the symmetric and asymmetric satellite. The effects of a stop in the tube and an offset of the ring from the spin axis are also investigated. An analysis of test results is also given including a determination of the effect of gravity on the time constants in the two modes.

The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

Science.gov (United States)

Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xuezhong; Xu, Zhongjie; Yuan, Xuefeng

2018-05-01

Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device.

Exact solution of the mixed spin-1/2 and spin-S Ising-Heisenberg diamond chain

Directory of Open Access Journals (Sweden)

L. Čanová

2009-01-01

Full Text Available The geometric frustration in a class of the mixed spin-1/2 and spin-S Ising-Heisenberg diamond chains is investigated by combining three exact analytical techniques: Kambe projection method, decoration-iteration transformation and transfer-matrix method. The ground state, the magnetization process and the specific heat as a function of the external magnetic field are particularly examined for different strengths of the geometric frustration. It is shown that the increase of the Heisenberg spin value S raises the number of intermediate magnetization plateaux, which emerge in magnetization curves provided that the ground state is highly degenerate on behalf of a sufficiently strong geometric frustration. On the other hand, all intermediate magnetization plateaux merge into a linear magnetization versus magnetic field dependence in the limit of classical Heisenberg spin S → ∞. The enhanced magnetocaloric effect with cooling rate exceeding the one of paramagnetic salts is also detected when the disordered frustrated phase constitutes the ground state and the external magnetic field is small enough.

Spin diffusion in bulk GaN measured with MnAs spin injector

KAUST Repository

Jahangir, Shafat; Dogan, Fatih; Kum, Hyun; Manchon, Aurelien; Bhattacharya, Pallab

2012-01-01

Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

Spin diffusion in bulk GaN measured with MnAs spin injector

KAUST Repository

Jahangir, Shafat

2012-07-16

Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

Spin doctoring

OpenAIRE

Vozková, Markéta

2011-01-01

1 ABSTRACT The aim of this text is to provide an analysis of the phenomenon of spin doctoring in the Euro-Atlantic area. Spin doctors are educated people in the fields of semiotics, cultural studies, public relations, political communication and especially familiar with the infrastructure and the functioning of the media industry. Critical reflection of manipulative communication techniques puts spin phenomenon in historical perspective and traces its practical use in today's social communica...

Spin coated graphene films as the transparent electrode in organic photovoltaic devices

International Nuclear Information System (INIS)

Kymakis, E.; Stratakis, E.; Stylianakis, M.M.; Koudoumas, E.; Fotakis, C.

2011-01-01

Many research efforts have been devoted to the replacement of the traditional indium–tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C 61 -butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.

Integration of atomic layer deposition CeO2 thin films with functional complex oxides and 3D patterns

International Nuclear Information System (INIS)

Coll, M.; Palau, A.; Gonzalez-Rosillo, J.C.; Gazquez, J.; Obradors, X.; Puig, T.

2014-01-01

We present a low-temperature, < 300 °C, ex-situ integration of atomic layer deposition (ALD) ultrathin CeO 2 layers (3 to 5 unit cells) with chemical solution deposited La 0.7 Sr 0.3 MnO 3 (LSMO) functional complex oxides for multilayer growth without jeopardizing the morphology, microstructure and physical properties of the functional oxide layer. We have also extended this procedure to pulsed laser deposited YBa 2 Cu 3 O 7 (YBCO) thin films. Scanning force microscopy, X-ray diffraction, aberration corrected scanning transmission electron microscopy and macroscopic magnetic measurements were used to evaluate the quality of the perovskite films before and after the ALD process. By means of microcontact printing and ALD we have prepared CeO 2 patterns using an ozone-robust photoresist that will avoid the use of hazardous lithography processes directly on the device components. These bilayers, CeO 2 /LSMO and CeO 2 /YBCO, are foreseen to have special interest for resistive switching phenomena in resistive random-access memory. - Highlights: • Integration of atomic layer deposition (ALD) CeO 2 layers on functional complex oxides • Resistive switching is identified in CeO 2 /La 0.7 Sr 0.3 MnO 3 and CeO 2 /YBa 2 Cu 3 O 7 bilayers. • Study of the robustness of organic polymers for area-selective ALD • Combination of ALD and micro-contact printing to obtain 3D patterns of CeO 2

La0,7Sr0,3MnO3 thin layers on SrTiO3(001) substrate. Structure and Mn valence

International Nuclear Information System (INIS)

Riedl, Thomas

2007-01-01

This thesis presents a highly spatially resolved characterization of crystal structure and Mn valence by pictures drawn in the TEM and electron-energy-loss ionization edges. The Mn valence determined for the internal od the studied LSMO layers agrees with the nomial value of 3.3, while on some LSMO/STO interfaces between substrate and layers as well as between multilayers a reduction by 0.1..0.2 is to be observed. Furthermore the influence of the interface manifests in the occurence of a shoulder on the side of lower energy loss of the Mn L3 edge. The geometrical phase analysis of HRTEM pictures and TEM bright-field pictures prove a tetragonal strain of th LSMO layer crystals, which consist of needle-shaped twin domains. From highly resolved scanning TEM pictures by electrons scattered under large angle results that the LSMO/STO interface exhibit a coherent lattice structure accidentally provided with elementary-cell stages. Especially the stages (single- or multi-stages) mediate the wavy structure of the LSMO/STO interlayers. Finally it is shown that at low thicknes of the TEM lamella the expected crystal-plane inclination exceeds the expected crystal-plane inclination of the twins [de

Epitaxial La2/3Sr1/3MnO3 thin films with unconventional magnetic and electric properties near the Curie temperature

International Nuclear Information System (INIS)

Signorini, L.; Riva, M.; Cantoni, M.; Bertacco, R.; Ciccacci, F.

2006-01-01

We used Pulsed Laser Deposition (PLD) in oxidizing environment to epitaxially grow optimally doped manganite La 2/3 Sr 1/3 MnO 3 (LSMO) thin films over a (001) oriented SrTiO 3 substrate. Synthesized samples show good room temperature magnetic properties accompanied by a peculiar extension of the metallic conduction regime to temperatures higher than the Curie point. In this paper we present a study of the dependence of transport and magnetic properties of LSMO thin films on the oxygen pressure during PLD growth. We show how interaction of the growing films with O 2 molecules is fundamental for a correct synthesis and in which way it is possible to adjust PLD experimental parameters in order to tune LSMO thin film properties. The persistence of the metallic conduction regime above the Curie temperature indicates some minor changes of the electronic structure near the Fermi level, which is responsible for the half-metallic behavior of LSMO at low temperature. This feature is rather intriguing from the technological point of view, as it could pave the way to the increase of operating temperature of devices based on LSMO

Orientation Control of Interfacial Magnetism at La0.67Sr0.33MnO3/SrTiO3 Interfaces.

Science.gov (United States)

Guo, Er-Jia; Charlton, Timothy; Ambaye, Haile; Desautels, Ryan D; Lee, Ho Nyung; Fitzsimmons, Michael R

2017-06-07

Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic "dead" layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. Here, the interfacial magnetism was investigated using three identically prepared La 0.67 Sr 0.33 MnO 3 (LSMO) thin films grown on different oriented SrTiO 3 (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largest across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. The approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.

Spin-polarized free electron beam interaction with radiation and superradiant spin-flip radiative emission

Directory of Open Access Journals (Sweden)

A. Gover

2006-06-01

Full Text Available The problems of spin-polarized free-electron beam interaction with electromagnetic wave at electron-spin resonance conditions in a magnetic field and of superradiant spin-flip radiative emission are analyzed in the framework of a comprehensive classical model. The spontaneous emission of spin-flip radiation from electron beams is very weak. We show that the detectivity of electron spin resonant spin-flip and combined spin-flip/cyclotron-resonance-emission radiation can be substantially enhanced by operating with ultrashort spin-polarized electron beam bunches under conditions of superradiant (coherent emission. The proposed radiative spin-state modulation and the spin-flip radiative emission schemes can be used for control and noninvasive diagnostics of polarized electron/positron beams. Such schemes are of relevance in important scattering experiments off nucleons in nuclear physics and off magnetic targets in condensed matter physics.

Spin helical states and spin transport of the line defect in silicene lattice

Energy Technology Data Exchange (ETDEWEB)

Yang, Mou; Chen, Dong-Hai; Wang, Rui-Qiang [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui, E-mail: ykbai@semi.ac.cn [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

2015-02-06

We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin–orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near the line defect and move backward on the other side, and vice versa for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide. - Highlights: • Band structure of silicene with a line defect. • Spin helical states around the line defect and their probability distribution features. • Spin transport along the line defect and that in the bulk silicene.

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien; Lee, K.-J.

2011-01-01

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien

2011-07-13

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Spin Hall effect and Berry phase of spinning particles

International Nuclear Information System (INIS)

Berard, Alain; Mohrbach, Herve

2006-01-01

We consider the adiabatic evolution of the Dirac equation in order to compute its Berry curvature in momentum space. It is found that the position operator acquires an anomalous contribution due to the non-Abelian Berry gauge connection making the quantum mechanical algebra noncommutative. A generalization to any known spinning particles is possible by using the Bargmann-Wigner equation of motions. The noncommutativity of the coordinates is responsible for the topological spin transport of spinning particles similarly to the spin Hall effect in spintronic physics or the Magnus effect in optics. As an application we predict new dynamics for nonrelativistic particles in an electric field and for photons in a gravitational field

Spin-polarized spin-orbit-split quantum-well states in a metal film

Energy Technology Data Exchange (ETDEWEB)

Varykhalov, Andrei; Sanchez-Barriga, Jaime; Gudat, Wolfgang; Eberhardt, Wolfgang; Rader, Oliver [BESSY Berlin (Germany); Shikin, Alexander M. [St. Petersburg State University (Russian Federation)

2008-07-01

Elements with high atomic number Z lead to a large spin-orbit coupling. Such materials can be used to create spin-polarized electronic states without the presence of a ferromagnet or an external magnetic field if the solid exhibits an inversion asymmetry. We create large spin-orbit splittings using a tungsten crystal as substrate and break the structural inversion symmetry through deposition of a gold quantum film. Using spin- and angle-resolved photoelectron spectroscopy, it is demonstrated that quantum-well states forming in the gold film are spin-orbit split and spin polarized up to a thickness of at least 10 atomic layers. This is a considerable progress as compared to the current literature which reports spin-orbit split states at metal surfaces which are either pure or covered by at most a monoatomic layer of adsorbates.

A Beautiful Spin

International Nuclear Information System (INIS)

Ji Xiangdong

2003-01-01

Spin is a beautiful concept that plays an ever important role in modern physics. In this talk, I start with a discussion of the origin of spin, and then turn to three themes in which spin has been crucial in subatomic physics: a lab to explore physics beyond the standard model, a tool to measure physical observables that are hard to obtain otherwise, a probe to unravel nonperturbative QCD. I conclude with some remarks on a world without spin

Spin motive forces, 'measurements', and spin-valves

International Nuclear Information System (INIS)

Barnes, S.E.

2007-01-01

Discussed is the spin motive force (smf) produced by a spin valve, this reflecting its dynamics. Relaxation implies an implicit measurement of the magnetization of the free layer of a valve. It is shown this has implications for the angular dependence of the torque transfer. Some discussion of recent experiments is included

Spin Orbit Interaction Engineering for beyond Spin Transfer Torque memory

Science.gov (United States)

Wang, Kang L.

Spin transfer torque memory uses electron current to transfer the spin torque of electrons to switch a magnetic free layer. This talk will address an alternative approach to energy efficient non-volatile spintronics through engineering of spin orbit interaction (SOC) and the use of spin orbit torque (SOT) by the use of electric field to improve further the energy efficiency of switching. I will first discuss the engineering of interface SOC, which results in the electric field control of magnetic moment or magneto-electric (ME) effect. Magnetic memory bits based on this ME effect, referred to as magnetoelectric RAM (MeRAM), is shown to have orders of magnitude lower energy dissipation compared with spin transfer torque memory (STTRAM). Likewise, interests in spin Hall as a result of SOC have led to many advances. Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures have been shown to arise from the large SOC. The large SOC is also shown to give rise to the large SOT. Due to the presence of an intrinsic extraordinarily strong SOC and spin-momentum lock, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. In particular, we will show the magnetization switching in a chromium-doped magnetic TI bilayer heterostructure by charge current. A giant SOT of more than three orders of magnitude larger than those reported in heavy metals is also obtained. This large SOT is shown to come from the spin-momentum locked surface states of TI, which may further lead to innovative low power applications. I will also describe other related physics of SOC at the interface of anti-ferromagnetism/ferromagnetic structure and show the control exchange bias by electric field for high speed memory switching. The work was in part supported by ERFC-SHINES, NSF, ARO, TANMS, and FAME.

Spin voltage generation through optical excitation of complementary spin populations

Science.gov (United States)

Bottegoni, Federico; Celebrano, Michele; Bollani, Monica; Biagioni, Paolo; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco

2014-08-01

By exploiting the spin degree of freedom of carriers inside electronic devices, spintronics has a huge potential for quantum computation and dissipationless interconnects. Pure spin currents in spintronic devices should be driven by a spin voltage generator, able to drive the spin distribution out of equilibrium without inducing charge currents. Ideally, such a generator should operate at room temperature, be highly integrable with existing semiconductor technology, and not interfere with other spintronic building blocks that make use of ferromagnetic materials. Here we demonstrate a device that matches these requirements by realizing the spintronic equivalent of a photovoltaic generator. Whereas a photovoltaic generator spatially separates photoexcited electrons and holes, our device exploits circularly polarized light to produce two spatially well-defined electron populations with opposite in-plane spin projections. This is achieved by modulating the phase and amplitude of the light wavefronts entering a semiconductor (germanium) with a patterned metal overlayer (platinum). The resulting light diffraction pattern features a spatially modulated chirality inside the semiconductor, which locally excites spin-polarized electrons thanks to electric dipole selection rules.

Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

International Nuclear Information System (INIS)

Eslami, L.; Faizabadi, E.

2014-01-01

The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

Operator spin foam models

International Nuclear Information System (INIS)

Bahr, Benjamin; Hellmann, Frank; Kaminski, Wojciech; Kisielowski, Marcin; Lewandowski, Jerzy

2011-01-01

The goal of this paper is to introduce a systematic approach to spin foams. We define operator spin foams, that is foams labelled by group representations and operators, as our main tool. A set of moves we define in the set of the operator spin foams (among other operations) allows us to split the faces and the edges of the foams. We assign to each operator spin foam a contracted operator, by using the contractions at the vertices and suitably adjusted face amplitudes. The emergence of the face amplitudes is the consequence of assuming the invariance of the contracted operator with respect to the moves. Next, we define spin foam models and consider the class of models assumed to be symmetric with respect to the moves we have introduced, and assuming their partition functions (state sums) are defined by the contracted operators. Briefly speaking, those operator spin foam models are invariant with respect to the cellular decomposition, and are sensitive only to the topology and colouring of the foam. Imposing an extra symmetry leads to a family we call natural operator spin foam models. This symmetry, combined with assumed invariance with respect to the edge splitting move, determines a complete characterization of a general natural model. It can be obtained by applying arbitrary (quantum) constraints on an arbitrary BF spin foam model. In particular, imposing suitable constraints on a spin(4) BF spin foam model is exactly the way we tend to view 4D quantum gravity, starting with the BC model and continuing with the Engle-Pereira-Rovelli-Livine (EPRL) or Freidel-Krasnov (FK) models. That makes our framework directly applicable to those models. Specifically, our operator spin foam framework can be translated into the language of spin foams and partition functions. Among our natural spin foam models there are the BF spin foam model, the BC model, and a model corresponding to the EPRL intertwiners. Our operator spin foam framework can also be used for more general spin

Nonequilibrium Spin Dynamics in a Trapped Fermi Gas with Effective Spin-Orbit Interactions

International Nuclear Information System (INIS)

Stanescu, Tudor D.; Zhang Chuanwei; Galitski, Victor

2007-01-01

We consider a trapped atomic system in the presence of spatially varying laser fields. The laser-atom interaction generates a pseudospin degree of freedom (referred to simply as spin) and leads to an effective spin-orbit coupling for the fermions in the trap. Reflections of the fermions from the trap boundaries provide a physical mechanism for effective momentum relaxation and nontrivial spin dynamics due to the emergent spin-orbit coupling. We explicitly consider evolution of an initially spin-polarized Fermi gas in a two-dimensional harmonic trap and derive nonequilibrium behavior of the spin polarization. It shows periodic echoes with a frequency equal to the harmonic trapping frequency. Perturbations, such as an asymmetry of the trap, lead to the suppression of the spin echo amplitudes. We discuss a possible experimental setup to observe spin dynamics and provide numerical estimates of relevant parameters

Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

Science.gov (United States)

Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

2017-11-01

The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

KAUST Repository

Zhu, Zhiyong

2011-10-14

Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148–456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications.

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

KAUST Repository

Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148–456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications.

Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer

Science.gov (United States)

Noel, P.; Thomas, C.; Fu, Y.; Vila, L.; Haas, B.; Jouneau, P.-H.; Gambarelli, S.; Meunier, T.; Ballet, P.; Attané, J. P.

2018-04-01

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0 ±0.5 nm . The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.

Selective coupling of individual electron and nuclear spins with integrated all-spin coherence protection

Science.gov (United States)

Terletska, Hanna; Dobrovitski, Viatcheslav

2015-03-01

The electron spin of the NV center in diamond is a promising platform for spin sensing. Applying the dynamical decoupling, the NV electron spin can be used to detect the individual weakly coupled carbon-13 nuclear spins in diamond and employ them for small-scale quantum information processing. However, the nuclear spins within this approach remain unprotected from decoherence, which ultimately limits the detection and restricts the fidelity of the quantum operation. Here we investigate possible schemes for combining the resonant decoupling on the NV spin with the decoherence protection of the nuclear spins. Considering several schemes based on pulse and continuous-wave decoupling, we study how the joint electron-nuclear spin dynamics is affected. We identify regimes where the all-spin coherence protection improves the detection and manipulation. We also discuss potential applications of the all-spin decoupling for detecting spins outside diamond, with the purpose of implementing the nanoscale NMR. This work was supported by the US Department of Energy Basic Energy Sciences (Contract No. DE-AC02-07CH11358).

Quantum spin liquids in the absence of spin-rotation symmetry: Application to herbertsmithite

Science.gov (United States)

Dodds, Tyler; Bhattacharjee, Subhro; Kim, Yong Baek

2013-12-01

It has been suggested that the nearest-neighbor antiferromagnetic Heisenberg model on the Kagome lattice may be a good starting point for understanding the spin-liquid behavior discovered in herbertsmithite. In this work, we investigate possible quantum spin liquid phases in the presence of spin-rotation symmetry-breaking perturbations such as Dzyaloshinskii-Moriya and Ising interactions, as well as second-neighbor antiferromagnetic Heisenberg interactions. Experiments suggest that such perturbations are likely to be present in herbertsmithite. We use the projective symmetry group analysis within the framework of the slave-fermion construction of quantum spin liquid phases and systematically classify possible spin liquid phases in the presence of perturbations mentioned above. The dynamical spin-structure factor for relevant spin liquid phases is computed and the effect of those perturbations are studied. Our calculations reveal dispersive features in the spin structure factor embedded in a generally diffuse background due to the existence of fractionalized spin-1/2 excitations called spinons. For two of the previously proposed Z2 states, the dispersive features are almost absent, and diffuse scattering dominates over a large energy window throughout the Brillouin zone. This resembles the structure factor observed in recent inelastic neutron-scattering experiments on singlet crystals of herbertsmithite. Furthermore, one of the Z2 states with the spin structure factor with mostly diffuse scattering is gapped, and it may be adiabatically connected to the gapped spin liquid state observed in recent density-matrix renormalization group calculations for the nearest-neighbor antiferromagnetic Heisenberg model. The perturbations mentioned above are found to enhance the diffuse nature of the spin structure factor and reduce the momentum dependencies of the spin gap. We also calculate the electron spin resonance (ESR) absorption spectra that further characterize the role of

Spin relaxation through lateral spin transport in heavily doped n -type silicon

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Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

2017-03-01

We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

Spin conversion induced by spin-orbit interaction in positronium collisions

International Nuclear Information System (INIS)

Saito, H; Nakayama, T; Hyodo, T

2009-01-01

The positronium spin conversion reaction induced by spin-orbit interaction is investigated. We obtain the reaction rates during positronium-Xe and positronium-Kr collisions by using the Zeeman mixing of positronium states. At thermal energies corresponding to room temperature, the reaction rate for spin conversion due to spin-orbit interaction is found to be almost twice that for the positronium pick-off reaction. We also study the energy dependence of the reaction rate. The mean energy of positronium is controlled by changing the gas temperature and using positronium in thermal equilibrium. We found that the reaction rate increases with the collision energy.

Contrasting dynamic spin susceptibility models and their relation to high-temperature superconductivity

International Nuclear Information System (INIS)

Schuettler, H.; Norman, M.R.

1996-01-01

We compare the normal-state resistivities ρ and the critical temperatures T c for superconducting d x 2 -y 2 pairing due to antiferromagnetic (AF) spin fluctuation exchange in the context of two phenomenological dynamical spin susceptibility models for the cuprate high-T c materials, one based on fits to NMR data on Y-Ba-Cu-O (YBCO) proposed by Millis, Monien, and Pines (MMP) and Monthoux and Pines (MP), and the other based on fits to neutron scattering data on YBCO proposed by Radtke, Ullah, Levin, and Norman (RULN). Assuming comparable electronic bandwidths and resistivities in both models, we show that the RULN model gives a much lower d-wave T c (approx-lt 20 K) than the MMP model (with T c ∼100 K). We demonstrate that these profound differences in the T c close-quote s arise from fundamental differences in the spectral weight distributions of the two model susceptibilities at high (>100 meV) frequencies and are not primarily caused by differences in the calculational techniques employed by MP and RULN. Further neutron scattering experiments, to explore the spectral weight distribution at all wave vectors over a sufficiently large excitation energy range, will thus be of crucial importance to resolve the question whether AF spin fluctuation exchange can provide a viable mechanism to account for high-T c superconductivity. Limitations of the Migdal-Eliashberg approach in such models will be discussed. copyright 1996 The American Physical Society

First spinning cylinder test analysis by using local approach to fracture

International Nuclear Information System (INIS)

Eripret, C.; Rousselier, G.

1993-01-01

In recent years, several experimental programs on large scale specimens were organized to evaluate capabilities of the fracture mechanics concepts employed in structural integrity assessment of PWR pressure vessels. During the first spinning cylinder test, a geometry effect was experimentally pointed out and exhibited the problem of transferability of toughness data from small scale to large scale specimens. An original analysis of this test, by means of local approach to fracture is presented in this paper. Both compact tension specimen and spinning cylinder fracture behaviour were computed by using a continuum damage mechanics model developed at EDF. The authors confirmed by numerical analysis that the cylinder's resistance to ductile tearing was considerably larger than in small scale fracture mechanics specimens tests, about 50 percent. The final crack growth predicted by the model was close to the experimental value. Discrepancies in J-R curves seemed to be due to an effect of stress triaxiality and plastic zone evolution. The geometry effect inducing differences in resistance to ductile tearing of the material involved in the specimens can be investigated and explained by using local approach to fracture methodology. 14 refs., 9 figs., 2 tabs

Expression of xenobiotic metabolizing cytochrome P450 genes in a spinosad-resistant Musca domestica L. strain.

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Dorte H Højland

Full Text Available Spinosad is important in pest management strategies of multiple insect pests. However, spinosad resistance is emerging in various pest species. Resistance has in some species been associated with alterations of the target-site receptor, but in others P450s seems to be involved. We test the possible importance of nine cytochrome P450 genes in the spinosad-resistant housefly strain 791spin and investigate the influence of spinosad on P450 expression in four other housefly strains.Significant differences in P450 expression of the nine P450 genes in the four strains after spinosad treatment were identified in 40% of cases, most of these as induction. The highly expressed CYP4G2 was induced 6.6-fold in the insecticide susceptible WHO-SRS females, but decreased 2-fold in resistant 791spin males. CYP6G4 was constitutively higher expressed in the resistant strain compared to the susceptible strain. Furthermore, CYP6G4 gene expression was increased in susceptible WHO-SRS flies by spinosad while the expression level did not alter significantly in resistant fly strains. Expression of CYP6A1 and male CYP6D3 was constitutively higher in the resistant strain compared to the susceptible. However, in both cases male expression was higher than female expression.CYP4G2, CYP6A1, CYP6D3 and CYP6G4 have expressions patterns approaching the expectations of a hypothesized sex specific spinosad resistance gene. CYP4G2 fit requirements of a spinosad resistance gene best, making it the most likely candidate. The overall high expression level of CYP4G2 throughout the strains also indicates importance of this gene. However, the data on 791spin are not conclusive concerning spinosad resistance and small contributions from multiple P450s with different enzymatic capabilities could be speculated to do the job in 791spin. Differential expression of P450s between sexes is more a rule than an exception. Noteworthy differences between spinosad influenced expression of P450 genes

Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

International Nuclear Information System (INIS)

Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

2014-01-01

We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

Electric dipole spin resonance in a quantum spin dimer system driven by magnetoelectric coupling

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Kimura, Shojiro; Matsumoto, Masashige; Akaki, Mitsuru; Hagiwara, Masayuki; Kindo, Koichi; Tanaka, Hidekazu

2018-04-01

In this Rapid Communication, we propose a mechanism for electric dipole active spin resonance caused by spin-dependent electric polarization in a quantum spin gapped system. This proposal was successfully confirmed by high-frequency electron spin resonance (ESR) measurements of the quantum spin dimer system KCuCl3. ESR measurements by an illuminating linearly polarized electromagnetic wave reveal that the optical transition between the singlet and triplet states in KCuCl3 is driven by an ac electric field. The selection rule of the observed transition agrees with the calculation by taking into account spin-dependent electric polarization. We suggest that spin-dependent electric polarization is effective in achieving fast control of quantum spins by an ac electric field.

Generalized non-Local Resistance Expression and its Application in F/N/F Spintronic Structure with Graphene Channel

Science.gov (United States)

Wei, Huazhou; Fu, Shiwei

We report our work on the spin transport properties in the F/N/F(ferromagnets/normal metal/ferromagnets) spintronic structure from a new theoretical perspective. A significant problem in the field is to explain the inferior measured order of magnitude for spin lifetime. Based on the known non-local resistance formula and the mechanism analysis of spin-flipping within the interfaces between F and N, we analytically derive a broadly applicable new non-local resistance expression and a generalized Hanle curve formula. After employing them in the F/N/F structure under different limits, especially in the case of graphene channel, we find that the fitting from experimental data would yield a longer spin lifetime, which approaches its theoretical predicted value in graphene. The authors acknowledge the financial support by China University of Petroleum-Beijing and the Key Laboratory of Optical Detection Technology for Oil and Gas in this institution.