The magnetoresistive effect induced by stress in spin-valve structures

International Nuclear Information System (INIS)

Li-Jie, Qian; Xiao-Yong, Xu; Jing-Guo, Hu

2009-01-01

Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic (FM) monolayer and an FM/antiferromagnetic (AFM) bilayer under a stress field, respectively. It then investigates the magnetoresistance (MR) of the spin-valve structure, which is built by an FM monolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling (FM coupling or AFM coupling) between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally

The effect of electrodes on 11 acene molecular spin valve: Semi-empirical study

Science.gov (United States)

Aadhityan, A.; Preferencial Kala, C.; John Thiruvadigal, D.

2017-10-01

A new revolution in electronics is molecular spintronics, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. The key point is the creation of molecular spin valve which consists of a diamagnetic molecule in between two magnetic leads. In this paper, non-equilibrium Green's function (NEGF) combined with Extended Huckel Theory (EHT); a semi-empirical approach is used to analyse the electron transport characteristics of 11 acene molecular spin valve. We examine the spin-dependence transport on 11 acene molecular junction with various semi-infinite electrodes as Iron, Cobalt and Nickel. To analyse the spin-dependence transport properties the left and right electrodes are joined to the central region in parallel and anti-parallel configurations. We computed spin polarised device density of states, projected device density of states of carbon and the electrode element, and transmission of these devices. The results demonstrate that the effect of electrodes modifying the spin-dependence behaviours of these systems in a controlled way. In Parallel and anti-parallel configuration the separation of spin up and spin down is lager in the case of iron electrode than nickel and cobalt electrodes. It shows that iron is the best electrode for 11 acene spin valve device. Our theoretical results are reasonably impressive and trigger our motivation for comprehending the transport properties of these molecular-sized contacts.

Spin Valve Systems for Angle Sensor Applications

OpenAIRE

Johnson, Andrew

2004-01-01

A contact-less sensor with the ability to measure over a 360° range has been long sought after in the automotive industry. Such a sensor could be realized by utilizing the angle dependence of the Giant Magneto Resistance (GMR) Effect in a special type of magnetic multilayer called a spin valve arranged in a wheatstone bridge circuit [Spo96]. A spin valve consists of two ferromagnetic layers separated by nonmagnetic spacer layer where the magnetization of one of the ferromagnetic layers is pin...

Thermal stability of low dose Ga+ ion irradiated spin valves

International Nuclear Information System (INIS)

Qi Xianjin; Wang Yingang; Zhou Guanghong; Li Ziquan

2009-01-01

The thermal stability of low dose Ga + ion irradiated spin valves has been investigated and compared with that of the as-prepared ones. The dependences of exchange field, measured using vibrating sample magnetometer at room temperature, on magnetic field sweep rate and time spent at negative saturation of the pinned ferromagnetic layer, and training effect were explored. The training effect is observed on both the irradiated spin valves and the as-prepared ones. The magnetic field sweep rate dependence of the exchange bias field of the irradiated spin valves is nearly the same as that of the as-prepared ones. For the as-prepared structure thermal activation has been observed, which showed that holding the irradiated structure at negative saturation of the pinned ferromagnetic layer for up to 28 hours results in no change in the exchange field. The results indicate that the thermal stability of the ion irradiated spin valves is the same as or even better than the as-prepared ones.

Spin injection and spin accumulation in all-metal mesoscopic spin valves

NARCIS (Netherlands)

Jedema, FJ; Nijboer, MS; Filip, AT; van Wees, BJ

2003-01-01

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic-metal-nonmagnetic-metal-ferromagnetic-metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, Permalloy (Py), cobalt (Co), and nickel (Ni), are used as electrical spin

Interplay of Peltier and Seebeck Effects in Nanoscale Nonlocal Spin Valves

NARCIS (Netherlands)

Bakker, F. L.; Slachter, A.; Adam, J-P; van Wees, B. J.

2010-01-01

We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second, and third

Anomalous superconducting spin-valve effect in NbN/FeN/Cu/FeN/FeMn multilayers

Energy Technology Data Exchange (ETDEWEB)

Hwang, Tae Jong; Kim, Dong Ho [Yeungnam University, Gyeongsan (Korea, Republic of)

2017-09-15

We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

Spin Switching via Quantum Dot Spin Valves

Science.gov (United States)

Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

2018-01-01

We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

Science.gov (United States)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

FY1995 study of high density near-contact magnetic recording using spin valve head; 1995 nendo spin valve head ni yoru chokomitsudo near contact jiki kiroku no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

Development of high performance spin valves formed by amorphous magnetic layer and head-medium interface with nano-thickness molecular film for realizing an ultra-high density of 20 Gbit/in{sup 2} using contact recording. The giant magnetoresistance effect was investigated for spin valves using very thin amorphous magnetic layer. In amorphous-CoFeB/Cu/ Co spin valves, the maximum MR ratio of 6% was achieved at the thickness of the amorphous layer of 2 nm. The spin valves with the amorphous layer exhibit very good thermal stability. Design guideline for molecularly thin lubricant was established using newly derived lubrication equation considering lubricant porosity. Novel method for accurately measuring surface force due to molecularly thin lubricant was developed by using Michelson interferometry to detect cantilever displacement, which enabled two-dimensional transient force measurement. (NEDO)

Graphene spin valve: An angle sensor

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

2017-06-15

Graphene spin valves can be optimized for various spintronic applications by tuning the associated experimental parameters. In this work, we report the angle dependent magnetoresistance (MR) in graphene spin valve for different orientations of applied magnetic field (B). The switching points of spin valve signals show a clear shift towards higher B for each increasing angle of the applied field, thus sensing the response for respective orientation of the magnetic field. The angular variation of B shifts the switching points from ±95 G to ±925 G as the angle is varied from 0° to 90° at 300 K. The observed shifts in switching points become more pronounced (±165 G to ±1450 G) at 4.2 K for similar orientation. A monotonic increase in MR ratio is observed as the angle of magnetic field is varied in the vertical direction at 300 K and 4.2 K temperatures. This variation of B (from 0° to 90°) increases the magnitude of MR ratio from ∼0.08% to ∼0.14% at 300 K, while at 4.2 K it progresses to ∼0.39% from ∼0.14%. The sensitivity related to angular variation of such spin valve structure can be employed for angle sensing applications.

Magnon Valve Effect between Two Magnetic Insulators

Science.gov (United States)

Wu, H.; Huang, L.; Fang, C.; Yang, B. S.; Wan, C. H.; Yu, G. Q.; Feng, J. F.; Wei, H. X.; Han, X. F.

2018-03-01

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien; Waintal, Xavier

2014-01-01

Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2014-05-28

Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green\\'s function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

Nanosized perpendicular organic spin-valves

Energy Technology Data Exchange (ETDEWEB)

Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Richter, Tim [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)

2015-03-09

A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Enhanced magnetoresistance in graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

2017-05-01

Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

Magnon detection using a ferroic collinear multilayer spin valve.

Science.gov (United States)

Cramer, Joel; Fuhrmann, Felix; Ritzmann, Ulrike; Gall, Vanessa; Niizeki, Tomohiko; Ramos, Rafael; Qiu, Zhiyong; Hou, Dazhi; Kikkawa, Takashi; Sinova, Jairo; Nowak, Ulrich; Saitoh, Eiji; Kläui, Mathias

2018-03-14

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y 3 Fe 5 O 12 |CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y 3 Fe 5 O 12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

High frequency spin torque oscillators with composite free layer spin valve

International Nuclear Information System (INIS)

Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

2016-01-01

We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

High frequency spin torque oscillators with composite free layer spin valve

Energy Technology Data Exchange (ETDEWEB)

Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

2016-07-15

We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

Superconducting spin valves controlled by spiral re-orientation in B20-family magnets

Science.gov (United States)

Pugach, N. G.; Safonchik, M.; Champel, T.; Zhitomirsky, M. E.; Lähderanta, E.; Eschrig, M.; Lacroix, C.

2017-10-01

We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few equivalent preferred directions under the control of a weak external magnetic field. Re-orienting the spiral direction allows one to controllably modify long-range spin-triplet superconducting correlations, leading to spin-valve switching behavior. Our results indicate that the spin-valve effect may be noticeable. This bilayer may be used as a magnetic memory element for cryogenic nanoelectronics. It has the following advantages in comparison to superconducting spin valves proposed previously: (i) it contains only one magnetic layer, which may be more easily fabricated and controlled; (ii) its ground states are separated by a potential barrier, which solves the "half-select" problem of the addressed switch of memory elements.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

Science.gov (United States)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2012-01-01

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

Spin-resolved electron waiting times in a quantum-dot spin valve

Science.gov (United States)

Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

2018-04-01

We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

Spin valve sensor for biomolecular identification: Design, fabrication, and characterization

Science.gov (United States)

Li, Guanxiong

Biomolecular identification, e.g., DNA recognition, has broad applications in biology and medicine such as gene expression analysis, disease diagnosis, and DNA fingerprinting. Therefore, we have been developing a magnetic biodetection technology based on giant magnetoresistive spin valve sensors and magnetic nanoparticle (developed for the magnetic nanoparticle detection, assuming the equivalent average field of magnetic nanoparticles and the coherent rotation of spin valve free layer magnetization. Micromagnetic simulations have also been performed for the spin valve sensors. The analytical model and micromagnetic simulations are found consistent with each other and are in good agreement with experiments. The prototype spin valve sensors have been fabricated at both micron and submicron scales. We demonstrated the detection of a single 2.8-mum magnetic microbead by micron-sized spin valve sensors. Based on polymer-mediated self-assembly and fine lithography, a bilayer lift-off process was developed to deposit magnetic nanoparticles onto the sensor surface in a controlled manner. With the lift-off deposition method, we have successfully demonstrated the room temperature detection of monodisperse 16-nm Fe3O 4 nanoparticles in a quantity from a few tens to several hundreds by submicron spin valve sensors, proving the feasibility of the nanoparticle detection. As desired for quantitative biodetection, a fairly linear dependence of sensor signal on the number of nanoparticles has been confirmed. The initial detection of DNA hybridization events labeled by magnetic nanoparticles further proved the magnetic biodetection concept.

Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

Directory of Open Access Journals (Sweden)

Walid Amamou

2016-03-01

Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Science.gov (United States)

Majidi, Leyla; Asgari, Reza

2014-10-01

We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley- and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley- and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β ) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures, whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h ) in F region displays a maximum value at h <λ , which moves towards larger exchange fields by increasing the temperature.

Vortex Flipping in Superconductor-Ferromagnet Spin Valve Structures

Science.gov (United States)

Patino, Edgar J.; Aprili, Marco; Blamire, Mark; Maeno, Yoshiteru

2014-03-01

We report in plane magnetization measurements on Ni/Nb/Ni/CoO and Co/Nb/Co/CoO spin valve structures with one of the ferromagnetic layers pinned by an antiferromagnetic layer. In samples with Ni, below the superconducting transition Tc, our results show strong evidence of vortex flipping driven by the ferromagnets magnetization. This is a direct consequence of proximity effect that leads to vortex supercurrents leakage into the ferromagnets. Here the polarized electron spins are subject to vortices magnetic field occasioning vortex flipping. Such novel mechanism has been made possible for the first time by fabrication of the F/S/F/AF multilayered spin valves with a thin-enough S layer to barely confine vortices inside as well as thin-enough F layers to align and control the magnetization within the plane. When Co is used there is no observation of vortex flipping effect. This is attributed to Co shorter coherence length. Interestingly instead a reduction in pinning field of about 400 Oe is observed when the Nb layer is in superconducting state. This effect cannot be explained in terms of vortex fields. In view of these facts any explanation must be directly related to proximity effect and thus a remarkable phenomenon that deserves further investigation. Programa Nacional de Ciencias Basicas COLCIENCIAS (No. 120452128168).

Strain effects on anisotropic magnetoresistance in a nanowire spin valve

Science.gov (United States)

Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

2016-11-01

The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

Spin injection and detection in lateral spin valves with hybrid interfaces

Science.gov (United States)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Magneto-resistive and spin valve heads fundamentals and applications

CERN Document Server

Mallinson, John C

2002-01-01

This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.Th

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

Science.gov (United States)

Jang, Hyuk-Jae; Richter, Curt A

2017-01-01

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

International Nuclear Information System (INIS)

Huong Giang, D.T.; Thuc, V.N.; Duc, N.H.

2012-01-01

Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni 80 Fe 20 /Cu/Fe 50 Co 50 /IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices. - Highlights: ► Investigate electric field-induced magnetic anisotropy in spin-valve/piezoelectric. ► Magnetization, magnetoresistance changes under electric field across piezoelectric. ► Magnetization in magnetostrictive FeCo-layer rotates under a compressive stress. ► This advance shows great implications for low-power electronics and spintronics.

Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

Science.gov (United States)

Burton, J D; Tsymbal, E Y

2011-04-15

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

Reduction of shunt current in buffer-free IrMn based spin-valve structures

Science.gov (United States)

Kocaman, B.; Akdoğan, N.

2018-06-01

The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6 nm in order to achieve the lowest shunt current and high blocking temperature (>300 K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.

Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

Energy Technology Data Exchange (ETDEWEB)

Liu, Luping [Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhan, Qingfeng, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Li, Run-Wei, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Tan, Xiaohua [Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

2016-03-15

We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

International Nuclear Information System (INIS)

Liu, Luping; Zhan, Qingfeng; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Li, Run-Wei; Tan, Xiaohua

2016-01-01

We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

Science.gov (United States)

Liu, Luping; Zhan, Qingfeng; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Tan, Xiaohua; Li, Run-Wei

2016-03-01

We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

Science.gov (United States)

Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

2017-11-27

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

Stretchable Spin Valve with Stable Magnetic Field Sensitivity by Ribbon-Patterned Periodic Wrinkles.

Science.gov (United States)

Li, Huihui; Zhan, Qingfeng; Liu, Yiwei; Liu, Luping; Yang, Huali; Zuo, Zhenghu; Shang, Tian; Wang, Baomin; Li, Run-Wei

2016-04-26

A strain-relief structure by combining the strain-engineered periodic wrinkles and the parallel ribbons was employed to fabricate flexible dual spin valves onto PDMS substrates in a direct sputtering method. The strain-relief structure can accommodate the biaxial strain accompanying with stretching operation (the uniaxial applied tensile strain and the induced transverse compressive strain due to the Poisson effect), thus significantly reducing the influence of the residual strain on the giant magnetoresistance (GMR) performance. The fabricated GMR dual spin-valve sensor exhibits the nearly unchanged MR ratio of 9.9%, magnetic field sensitivity up to 0.69%/Oe, and zero-field resistance in a wide range of stretching strain, making it promising for applications on a conformal shape or a movement part.

Current-induced magnetization changes in a spin valve due to incoherent emission of non-equilibrium magnons

OpenAIRE

Kozub, V. I.; Caro, J.

2004-01-01

We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission by electrons. Our approach is based on the rate equation for the magnon occupation, using Fermi's golden rule for magnon emission and absorption and the non-equilibrium electron distribution for a biased spin valve. The magnon emission reduces the magnetizat...

Flexible semi-transparent organic spin valve based on bathocuproine

International Nuclear Information System (INIS)

Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r = 5 mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

The multi-step tunneling analogue of conductivity mismatch in organic spin valves

NARCIS (Netherlands)

Tran, T. Lan Ahn; Le, T.Q.; Sanderink, Johannes G.M.; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

Carbon-based, molecular semiconductors offer several attractive attributes for spintronics, such as exceptionally weak spin-orbit coupling and compatibility with bottom-up nanofabrication. In spite of the promising properties of organic spin valves, however, the physical mechanisms governing

Current-induced magnetic switching of a single molecule magnet on a spin valve

International Nuclear Information System (INIS)

Zhang, Xiao; Wang, Zheng-Chuan; Zheng, Qing-Rong; Zhu, Zheng-Gang; Su, Gang

2015-01-01

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs

Current-induced magnetic switching of a single molecule magnet on a spin valve

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiao [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Zheng-Chuan, E-mail: wangzc@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zheng, Qing-Rong [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zhu, Zheng-Gang [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); School of Electronics, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China); Su, Gang, E-mail: gsu@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China)

2015-04-17

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs.

Pseudo spin-valve behavior in oxide ferromagnet/superconductor/ferromagnet trilayers

International Nuclear Information System (INIS)

Pang, B.S.H.; Bell, C.; Tomov, R.I.; Durrell, J.H.; Blamire, M.G.

2005-01-01

La 0.7 Ca 0.3 MnO 3 /YBa 2 Cu 3 O 7-δ /La 0.67 Sr 0.33 MnO 3 heterostructural devices with double coercivity have been fabricated. The superconducting critical current (I c ) and critical temperature in both parallel (P) and antiparallel (AP) magnetic configurations remained unchanged within our measurement limits. This observation is contrary to results obtained elsewhere using similar metallic systems. A pseudo spin-valve magnetoresistive (MR) characteristic was observed at bias current (I bias )∼I c at temperatures below the onset of superconductivity. The effect increased with decreasing temperature and I bias and can be explained using the assumption of the electron spin-charge separation

Magnetic scanning gate microscopy of CoFeB lateral spin valve

Directory of Open Access Journals (Sweden)

Héctor Corte-León

2017-05-01

Full Text Available Devices comprised of CoFeB nanostructures with perpendicular magnetic anisotropy and non-magnetic Ta channel were operated in thermal lateral spin valve (LSV mode and studied by magnetotransport measurements and magnetic scanning gate microscopy (SGM. Due to the short spin diffusion length of Ta, the spin diffusion signal was suppressed, allowing the study of the contribution from the anomalous Nernst (ANE and anomalous Hall effects (AHE. The magnetotransport measurements identified the switching fields of the CoFeB nanostructures and demonstrated a combination of AHE and ANE when the devices were operated in thermally-driven spin-injection mode. Modified scanning probe microscopy probes were fabricated by placing a NdFeB magnetic bead (MB on the apex of a commercial Si probe. The dipole magnetic field distribution around the MB was characterized by using differential phase contrast technique and direct measurement of the switching field induced by the bead in the CoFeB nanodevices. Using SGM we demonstrate the influence of localized magnetic field on the CoFeB nanostructures near the non-magnetic channel. This approach provides a promising route towards the study of thermal and spin diffusion effects using local magnetic fields.

Magnetic scanning gate microscopy of CoFeB lateral spin valve

Science.gov (United States)

Corte-León, Héctor; Scarioni, Alexander Fernandez; Mansell, Rhodri; Krzysteczko, Patryk; Cox, David; McGrouther, Damien; McVitie, Stephen; Cowburn, Russell; Schumacher, Hans W.; Antonov, Vladimir; Kazakova, Olga

2017-05-01

Devices comprised of CoFeB nanostructures with perpendicular magnetic anisotropy and non-magnetic Ta channel were operated in thermal lateral spin valve (LSV) mode and studied by magnetotransport measurements and magnetic scanning gate microscopy (SGM). Due to the short spin diffusion length of Ta, the spin diffusion signal was suppressed, allowing the study of the contribution from the anomalous Nernst (ANE) and anomalous Hall effects (AHE). The magnetotransport measurements identified the switching fields of the CoFeB nanostructures and demonstrated a combination of AHE and ANE when the devices were operated in thermally-driven spin-injection mode. Modified scanning probe microscopy probes were fabricated by placing a NdFeB magnetic bead (MB) on the apex of a commercial Si probe. The dipole magnetic field distribution around the MB was characterized by using differential phase contrast technique and direct measurement of the switching field induced by the bead in the CoFeB nanodevices. Using SGM we demonstrate the influence of localized magnetic field on the CoFeB nanostructures near the non-magnetic channel. This approach provides a promising route towards the study of thermal and spin diffusion effects using local magnetic fields.

Effect of nano-oxide layers on giant magnetoresistance in pseudo-spin-valves using Co2FeAl electrodes

International Nuclear Information System (INIS)

Zhang, D.L.; Xu, X.G.; Wu, Y.; Miao, J.; Jiang, Y.

2011-01-01

We studied the pseudo-spin-valves (PSVs) with a structure of Ta/Co 2 FeAl/NOL 1 /Co 2 FeAl/Cu/Co 2 FeAl/NOL 2 /Ta, where NOL represents the nano-oxide layer. Compared with the normal Co 2 FeAl (CFA) PSV with a structure of Ta/Co 2 FeAl/Cu/Co 2 FeAl/Ta, which shows only a current-in-plane (CIP) giant magnetoresistance (GMR) of 0.03%, the CFA PSV with NOLs shows a large CIP-GMR of 5.84%. The enhanced GMR by the NOLs inserted in the CFA PSV is due to the large specular reflection caused by [(CoO)(Fe 2 O 3 )(Al 2 O 3 )] in NOL 1 and [(Fe 2 O 3 )(Al 2 O 3 )(Ta 2 O 5 )] in NOL 2 . Another reason is that the roughness of the interface between Ta and CFA is improved by the oxidation procedure. - Research highlights: → Nano-oxide layers are applied in the pseudo-spin-valves with the Heusler alloy. → The CIP-GMR of pseudo-spin-valves is improved from 0.03% to 5.84%. → The GMR ratio is decided by the position of nano-oxide layers.

Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

Science.gov (United States)

Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E; Hankiewicz, Ewelina M; Žutić, Igor

2016-10-14

We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling

NARCIS (Netherlands)

Schoonus, J.J.H.M.; Lumens, P.G.E.; Wagemans, W.; Kohlhepp, J.T.; Bobbert, P.A.; Swagten, H.J.M.; Koopmans, B.

2009-01-01

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5nm)/tris(8- hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of

Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet heterostructures

Energy Technology Data Exchange (ETDEWEB)

Lenk, Daniel; Zdravkov, Vladimir I.; Kehrle, Jan; Obermeier, Guenther; Krug von Nidda, Hans-Albrecht; Mueller, Claus; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Sidorenko, Anatolie S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Tagirov, Lenar [Solid State Physics Department, Kazan Federal University (Russian Federation)

2015-07-01

We investigated the triplet spin-valve effect in nanoscale layered S/F{sub 1}/N/F{sub 2}/AF heterostructures with varying F{sub 1}-layer thickness (where S=Nb is a singlet superconducting, F{sub 1}=Cu{sub 41}Ni{sub 59} and F{sub 2}=Co a ferromagnetic, and N a normal-conducting, non-magnetic layer). The theory predicts a long-range, odd-in-frequency triplet component of superconductivity at non-collinear alignment of the magnetizations of F{sub 1} and F{sub 2}. This triplet component exhausts the singlet state and, thus, lowers the superconducting transition temperature, T{sub c}, yielding a global minimum of T{sub c} close to the perpendicular mutual orientations of the magnetizations. We found an oscillating decay of T{sub c} suppression, due to the generation of the triplet component, with increasing F{sub 1} layer thickness, which we discuss in the framework of recent theories.

Magnetic structure of the spin valve interface

International Nuclear Information System (INIS)

Nicholson, D.M.C.; Butler, W.H.; Zhang, X.; MacLaren, J.M.; Gurney, B.A.; Speriosu, V.S.

1994-01-01

Nonferromagnetic atoms present at Ni/Cu and Permalloy/Cu interfaces in sputtered spin valve magnetoresistive layered structures have been shown to cause reduced magnetoresistance. Here we show that a model in which the moments on the Ni atoms in the interfacial region of Ni/Cu are reduced substantially by interdiffusion with Cu is consistent with the experimental results. In contrast, we believe that moments persist at the permalloy/Cu interface, which first principle total energy calculations suggest will be disordered at finite temperatures. These reduced or disordered moments are expected to significantly reduce the GMR

Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers

International Nuclear Information System (INIS)

Steiner, Roland Johannes

2006-01-01

The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T c (H)- and the R(H)-curve. (orig.)

Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

Energy Technology Data Exchange (ETDEWEB)

Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

2012-01-01

New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light

Effect of uniaxial strain on the tunnel magnetoresistance of T-shaped graphene nanoribbon based spin-valve

Science.gov (United States)

Fouladi, A. Ahmadi

2016-07-01

We theoretically investigated the spin-dependent transport through a T-shaped graphene nanoribbon (TsGNR) based spin-valve consisting of armchair graphene sandwiched between two semi-infinite ferromagnetic armchair graphene nanoribbon leads in the presence of an applied uniaxial strain. Based on a tight-binding model and standard nonequilibrium Green's function technique, it is demonstrated that the tunnel magnetoresistance (TMR) for the system can be increased about 98% by tuning the uniaxial strain. Our results show that the absolute values of TMR around the zero bias voltage for compressive strain are larger than tensile strain. In addition, the TMR of the system can be nicely controlled by GNR width.

Nanostructures based on superconducting Nb and ferromagnetic CuNi alloy for elaboration of spin-valve core

International Nuclear Information System (INIS)

Morari, Roman

2013-01-01

The main goal of our research group is the elaboration of superconducting spin-switch (valve) based on Ferromagnetic/Superconductor/Ferromagnetic core. We could realize all building blocks necessary for the fabrication of the core structure of the superconducting spin valve, consisting of two mirror symmetric bilayers. In other words, the spin valve consists of a F/S * /F trilayer, which can be regarded as a package of a F/S and S/F bilayer so that S * =2S in the trilayer. For such a trilayer, the theory predicts that the critical temperature depends on the relative orientation of the magnetization of the ferromagnetic layers. To enable a reversal of one of the magnetizations of the layers with respect to the other by an external magnetic field, the coercive forces of the F layers have to be different due to either intrinsic properties or to an antiferromagnetic pinning layer delivering an exchange bias. The main points of our study are presented here. (author)

Effect of resistance feedback on spin torque-induced switching of nanomagnets

International Nuclear Information System (INIS)

Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

2009-01-01

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

Effect of NiAl underlayer and spacer on magnetoresistance of current-perpendicular-to-plane spin valves using Co2Mn(Ga0.5Sn0.5) Heusler alloy

International Nuclear Information System (INIS)

Hase, N.; Nakatani, T.M.; Kasai, S.; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

2012-01-01

We investigated the effect of a NiAl underlayer and spacer on magnetoresistive (MR) properties in current-perpendicular-to-plane spin valves (CPP-SVs) using Co 2 Mn(Ga 0.5 Sn 0.5 ) (CMGS) Heusler alloy ferromagnetic layers. The usage of a NiAl underlayer allowed a high temperature annealing for the L2 1 ordering of the bottom CMGS layer, giving rise to a MR ratio of 10.2% at room temperature. We found that the usage of a NiAl spacer layer also improved the tolerance of the multilayer structure against thermal delamination, which allowed annealing to induce the L2 1 structure in both the bottom and top CMGS layers. However, the short spin diffusion length of NiAl resulted in a lower MR ratio compared to that obtained using a Ag spacer. Transmission electron microscopy of the multilayer structure of CPP-SVs showed that the atomically flat layered structure was maintained after the annealing. - Highlights: → CPP spin valves using Co 2 Mn(Ga 0.5 Sn 0.5 ) ferromagnetic layers with a new underlayer material. → NiAl underlayer and spacer improve the thermal tolerance of the spin valve structure. → NiAl underlayer improves MR ratio compared to Ag because of higher annealing temperature. → NiAl spacer degrades MR ratios compared to Ag because of short spin diffusion length. → Potential of heat resistant underlayer and spacer layer for CPP-SV using Heusler alloy.

Inverse Magnetoresistance in Polymer Spin Valves.

Science.gov (United States)

Ding, Shuaishuai; Tian, Yuan; Li, Yang; Mi, Wenbo; Dong, Huanli; Zhang, Xiaotao; Hu, Wenping; Zhu, Daoben

2017-05-10

In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical La 2/3 Sr 1/3 MnO 3 (LSMO)/P3HT/AlO x /Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlO x /Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.

Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

Science.gov (United States)

Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

MnNi-based spin valve sensors combining high thermal stability, small footprint and pTesla detectivities

Science.gov (United States)

Silva, Marília; Leitao, Diana C.; Cardoso, Susana; Freitas, Paulo

2018-05-01

Magnetoresistive sensors with high thermal robustness, low noise and high spatial resolution are the answer to a number of challenging applications. Spin valve sensors including MnNi as antiferromagnet layer provide higher exchange bias field and improved thermal stability. In this work, the influence of the buffer layer type (Ta, NiFeCr) and thickness on key sensor parameters (e.g. offset field, Hf) is investigated. A Ta buffer layer promotes a strong (111) texture which leads to a higher value of MR. In contrast, Hf is lower for NiFeCr buffer. Micrometric sensors display thermal noise levels of 1 nT/Hz1/2 and 571 pT/Hz1/2 for a sensor height (h) of 2 and 4 μm, respectively. The temperature dependence of MR and sensitivity is also addressed and compared with MnIr based spin valves. In this case, MR abruptly decreases after heating at 160°C (without magnetic field), contrary to MnNi-based spin valves, where only a 10% MR decrease (relative to the initial value) is seen at 275°C. Finally, to further decrease the noise levels and improve detectivity, MnNi spin-valves are deposited vertically, and connected in parallel and series (in-plane) to create a device with low resistance and high sensitivity. A field detection at thermal level of 346 pT/Hz1/2 is achieved for a device with a total of 300 SVs (4 vertical, 15 in series, 5 in parallel).

Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

Science.gov (United States)

Schoonus, J J H M; Lumens, P G E; Wagemans, W; Kohlhepp, J T; Bobbert, P A; Swagten, H J M; Koopmans, B

2009-10-02

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

Role of the antiferromagnetic pinning layer on spin wave properties in IrMn/NiFe based spin-valves

Energy Technology Data Exchange (ETDEWEB)

Gubbiotti, G., E-mail: gubbiotti@fisica.unipg.it; Tacchi, S. [Istituto Officina dei Materiali del CNR (IOM-CNR), Unità di Perugia, I-06123 Perugia (Italy); Del Bianco, L. [Department of Physics and Astronomy, University of Bologna, I-40127 Bologna (Italy); Department of Physics and Earth Sciences and CNISM, University of Ferrara, I-44122 Ferrara (Italy); Bonfiglioli, E.; Giovannini, L.; Spizzo, F.; Zivieri, R. [Department of Physics and Earth Sciences and CNISM, University of Ferrara, I-44122 Ferrara (Italy); Tamisari, M. [Department of Physics and Earth Sciences and CNISM, University of Ferrara, I-44122 Ferrara (Italy); Dipartimento di Fisica e Geologia, Università di Perugia, I-06123 Perugia (Italy)

2015-05-07

Brillouin light scattering (BLS) was exploited to study the spin wave properties of spin-valve (SV) type samples basically consisting of two 5 nm-thick NiFe layers (separated by a Cu spacer of 5 nm), differently biased through the interface exchange coupling with an antiferromagnetic IrMn layer. Three samples were investigated: a reference SV sample, without IrMn (reference); one sample with an IrMn underlayer (10 nm thick) coupled to the bottom NiFe film; one sample with IrMn underlayer and overlayer of different thickness (10 nm and 6 nm), coupled to the bottom and top NiFe film, respectively. The exchange coupling with the IrMn, causing the insurgence of the exchange bias effect, allowed the relative orientation of the NiFe magnetization vectors to be controlled by an external magnetic field, as assessed through hysteresis loop measurements by magneto-optic magnetometry. Thus, BLS spectra were acquired by sweeping the magnetic field so as to encompass both the parallel and antiparallel alignment of the NiFe layers. The BLS results, well reproduced by the presented theoretical model, clearly revealed the combined effects on the spin dynamic properties of the dipolar interaction between the two NiFe films and of the interface IrMn/NiFe exchange coupling.

Photoemission microscopy study of picosecond magnetodynamics in spin-valve-type thin film elements

International Nuclear Information System (INIS)

Schneider, C.M.; Kaiser, A.; Wiemann, C.; Tieg, C.; Cramm, S.

2010-01-01

Exploring ultimate time scales of magnetic switching processes is an important issue in spin electronics. In spin valves or magnetic tunnelling junctions magnetic anisotropies and coupling phenomena alter the magnetodynamic response of the entire system. Understanding the role of these interactions is a key to the design of optimized devices. We have employed time-resolved X-ray photoemission microscopy to address the magnetodynamics in spin-valve-type model systems in the ns- and ps-regime. In Co/Cr/Fe(0 0 1) single crystal elements we find a strong influence of the magnetocrystalline anisotropy, which tends to suppress rotation processes. In addition, we observe a dynamic 'decoupling' of the layers. In low-anisotropy FeNi/Cr/FeCo trilayers, the interlayer coupling character determines the dynamic response. Particularly, rotational processes in the FeNi and FeCo layers are temporarily shifted to each other, which can be related to different coercivities of the individual layers. By contrast, the domain wall motion in both layers closely agrees, caused by an enhanced coupling due to the domain wall stray fields. Our examples demonstrate that the detailed magnetodynamics in coupled magnetic layers is quite complex and depends strongly on the timescale under consideration.

Ordinary and triplet superconducting spin valve effect in Fe/Pb based systems

Energy Technology Data Exchange (ETDEWEB)

Leksin, Pavel; Schumann, Joachim; Krupskaya, Yulia; Kataev, Vladislav; Hess, Christian; Schmidt, Oliver; Buechner, Bernd [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Garifyanov, Nadir; Garifullin, Ilgiz [Zavoisky Physical-Technical Institute of RAS, Kazan (Russian Federation); Fominov, Yakov [L. D. Landau Institute for Theoretical Physics of RAS, Moscow (Russian Federation)

2015-07-01

We report on experimental evidence for the occurrence of the long range triplet correlations (LRTC) of the superconducting (SC) condensate in the spin-valve heterostructures CoO{sub x}/Fe1/Cu/Fe2/Pb. The LRTC generation in this layer sequence is accompanied by a T{sub c} suppression near the orthogonal mutual orientation of the Fe1 and Fe2 layers' magnetization. This T{sub c} drop reaches its maximum of 60mK at the Fe2 layer thickness d{sub Fe2} = 0.6 nm and falls down when d{sub Fe2} is increased. The modification of the Fe/Pb interface by using a thin Cu layer between Fe and Pb layers reduces the SC transition width without preventing the interaction between Pb and Fe2 layers. The dependence of the SSVE magnitude on Fe1 layer thickness d{sub Fe1} reveals maximum of the effect when d{sub Fe1} and d{sub Fe2} are equal and the d{sub Fe2} value is minimal. Using the optimal d{sub Fe1}, d{sub Fe2} and the intermediate Cu layer we realized almost full switching from normal to SC state due to SSVE.

Strong spin-filtering and spin-valve effects in a molecular V-C-60-V contact

DEFF Research Database (Denmark)

Koleini, Mohammad; Brandbyge, Mads

2012-01-01

Motivated by the recent achievements in the manipulation of C-60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C-60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111) surface using first-principles calculations....... For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C-60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%). Moreover, we find a significant change...... in the conductance between parallel and anti-parallel spin polarizations in the junction (86%) which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems....

Influence of mechanical strain on magnetic characteristics of spin valves

International Nuclear Information System (INIS)

Ac, V; Anwarzai, B; Luby, S; Majkova, E

2008-01-01

Giant magnetoresistance (GMR) of Co and Fe-Co based e-beam evaporated spin valves with Cu and Au spacers was studied. The effect of strain on samples, which is detrimental in standard GMR sensors, was measured in a bending configuration. The different dependences of coercivity H c and magnetic field H ip in the point of inflection of MR loops vs. strain were found. For sample with Co/Au/Co core, H c , H ip increase with increasing compressive stress, whereas for sample with FeCo/Cu/Co core they increase with tensile stress. The highest relative change of MR ratio vs. bending in the strain interval ± 300 x 10 -6 is 1-2 % of the basic magnetoresistance and, practically, it does not influence the SV output

Magnetic Nanostructures Spin Dynamics and Spin Transport

CERN Document Server

Farle, Michael

2013-01-01

Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

Correlations between atomic structure and giant magnetoresistance ratio in Co2(Fe,Mn)Si spin valves

International Nuclear Information System (INIS)

Lari, L; Sizeland, J; Gilks, D; Uddin, G M; Nedelkoski, Z; Hasnip, P J; Lazarov, V K; Yoshida, K; Galindo, P L; Sato, J; Oogane, M; Ando, Y; Hirohata, A

2014-01-01

We show that the magnetoresistance of Co 2 Fe x Mn 1−x Si-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co 2 Fe x Mn 1−x Si/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350 °C and 500 °C creates partial B2/L2 1 and fully L2 1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co 2 Fe x Mn 1−x Si interface is more ordered compared to the Co 2 Fe x Mn 1−x Si/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible. (fast track communication)

Interfacial spectroscopic characterization of organic/ferromagnet hetero-junction of 3,4,9,10-perylene-teracarboxylic dianhydride-based organic spin valves

Energy Technology Data Exchange (ETDEWEB)

Hong, Jhen-Yong; Ou Yang, Kui-Hon; Li, Kai-Shin [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Wang, Bo-Yao [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Shiu, Hung-Wei; Chen, Chia-Hao; Chan, Yuet-Loy; Wei, Der-Hsin; Chang, Fan-Hsiu; Lin, Hong-Ji [National Synchrotron Radiation Research Center, 30076 Hsinchu, Taiwan (China); Chiang, Wen-Chung, E-mail: wchiang@faculty.pccu.edu.tw [Department of Physics, Chinese Culture University, 11114 Taipei, Taiwan (China); Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China)

2014-02-24

We report interfacial characterization of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA)-based organic spin valves (OSV) dusted with a thin layer of partially oxidized alumina at the organic semiconductor (OSC)/ferromagnet (FM) interfaces. Up to 13.5% magnetoresistance is achieved at room temperature. X-ray photoelectron spectroscopy measurements reveal interfacial electronic interaction between PTCDA and FM while the application of a thin alumina layer at the PTCDA/FM interfaces prevents the electronic hybridization and effectively preserves the spin injection into the OSC spacer. This finding demonstrates the critical effect of interfacial structure on magnetotransport behavior in OSV.

Strong spin-filtering and spin-valve effects in a molecular V–C60–V contact

Directory of Open Access Journals (Sweden)

Mohammad Koleini

2012-08-01

Full Text Available Motivated by the recent achievements in the manipulation of C60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111 surface using first-principles calculations. For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%. Moreover, we find a significant change in the conductance between parallel and anti-parallel spin polarizations in the junction (86% which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems.

Microwave spectroscopy and electronic transport properties of ferromagnetic Josephson junctions and superconducting spin-valves

Energy Technology Data Exchange (ETDEWEB)

Thalmann, Marcel; Rudolf, Marcel; Pietsch, Torsten [Zukunftskolleg and Department of Physics, University of Konstanz, Universitaetsstrasse 10, 78464 Konstanz (Germany)

2016-07-01

Hybrid superconducting nanostructures recently attracted tremendous interest, due to their great potential in dissipation-less spin-electronics with unprecedented switching rates. The practical realisation of such devices, however, requires a complete understanding of the transfer and dynamics of spin- and charge currents between superconducting (S) and ferromagnetic (F) circuit elements, as well as the coupling between spin- and charge degrees of freedom in these systems. We investigate novel transport phenomena in superconductor-ferromagnet hybrid nanostructures under non-equilibrium conditions. Microwave spectroscopy is used to elucidate fundamental questions related to the complex interplay of competing order parameters and the question of relaxation mechanisms of non-equilibrium distributions with respect to spin, charge and energy. Recent experiments on two complimentary device structures are discussed: (I) in diffusive S/F/S Josephson junctions with non-sinusoidal current-phase relationship and (II) local and non-local transport measurements and microwave spectroscopy in F/S/F lateral spin-valves.

Direct observation of the spin-dependent Peltier effect.

Science.gov (United States)

Flipse, J; Bakker, F L; Slachter, A; Dejene, F K; van Wees, B J

2012-02-05

The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. When two materials with different Peltier coefficients are placed in contact with one another, the Peltier effect causes a net flow of heat either towards or away from the interface between them. Spintronics describes the transport of electric charge and spin angular momentum by separate spin-up and spin-down channels in a device. The observation that spin-up and spin-down charge transport channels are able to transport heat independently of each other has raised the possibility that spin currents could be used to heat or cool the interface between materials with different spin-dependent Peltier coefficients. Here, we report the direct observation of the heating and cooling of such an interface by a spin current. We demonstrate this spin-dependent Peltier effect in a spin-valve pillar structure that consists of two ferromagnetic layers separated by a non-ferromagnetic metal. Using a three-dimensional finite-element model, we extract spin-dependent Peltier coefficients in the range -0.9 to -1.3 mV for permalloy. The magnetic control of heat flow could prove useful for the cooling of nanoscale electronic components or devices.

Quasiparticle-mediated spin Hall effect in a superconductor.

Science.gov (United States)

Wakamura, T; Akaike, H; Omori, Y; Niimi, Y; Takahashi, S; Fujimaki, A; Maekawa, S; Otani, Y

2015-07-01

In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

Directory of Open Access Journals (Sweden)

Rugang Geng

2016-09-01

Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

Spin injection into Pt-polymers with large spin-orbit coupling

Science.gov (United States)

Sun, Dali; McLaughlin, Ryan; Siegel, Gene; Tiwari, Ashutosh; Vardeny, Z. Valy

2014-03-01

Organic spintronics has entered a new era of devices that integrate organic light-emitting diodes (OLED) in organic spin valve (OSV) geometry (dubbed bipolar organic spin valve, or spin-OLED), for actively manipulating the device electroluminescence via the spin alignment of two ferromagnetic electrodes (Science 337, 204-209, 2012; Appl. Phys. Lett. 103, 042411, 2013). Organic semiconductors that contain heavy metal elements have been widely used as phosphorescent dopants in white-OLEDs. However such active materials are detrimental for OSV operation due to their large spin-orbit coupling (SOC) that may limit the spin diffusion length and thus spin-OLED based on organics with large SOC is a challenge. We report the successful fabrication of OSVs based on pi-conjugated polymers which contain intrachain Platinum atoms (dubbed Pt-polymers). Spin injection into the Pt-polymers is investigated by the giant magnetoresistance (GMR) effect as a function of bias voltage, temperature and polymer layer thickness. From the GMR bias voltage dependence we infer that the ``impendence mismatch'' between ferromagnetic electrodes and Pt-polymer may be suppressed due to the large SOC. Research sponsored by the NSF (Grant No. DMR-1104495) and NSF-MRSEC (DMR 1121252) at the University of Utah.

Laser-assisted spin-polarized transport in graphene tunnel junctions

International Nuclear Information System (INIS)

Ding Kaihe; Zhu Zhengang; Berakdar, Jamal

2012-01-01

The Keldysh nonequilibrium Green’s function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. (paper)

Role of the magnetic anisotropy in organic spin valves

Directory of Open Access Journals (Sweden)

V. Kalappattil

2017-09-01

Full Text Available Magnetic anisotropy plays an important role in determining the magnetic functionality of thin film based electronic devices. We present here, the first systematic study of the correlation between magnetoresistance (MR response in organic spin valves (OSVs and magnetic anisotropy of the bottom ferromagnetic electrode over a wide temperature range (10 K–350 K. The magnetic anisotropy of a La0.67Sr0.33MnO3 (LSMO film epitaxially grown on a SrTiO3 (STO substrate was manipulated by reducing film thickness from 200 nm to 20 nm. Substrate-induced compressive strain was shown to drastically increase the bulk in-plane magnetic anisotropy when the LSMO became thinner. In contrast, the MR response of LSMO/OSC/Co OSVs for many organic semiconductors (OSCs does not depend on either the in-plane magnetic anisotropy of the LSMO electrodes or their bulk magnetization. All the studied OSV devices show a similar temperature dependence of MR, indicating a similar temperature-dependent spinterface effect irrespective of LSMO thickness, resulting from the orbital hybridization of carriers at the OSC/LSMO interface.

Half-metallic superconducting triplet spin multivalves

Science.gov (United States)

Alidoust, Mohammad; Halterman, Klaus

2018-02-01

We study spin switching effects in finite-size superconducting multivalve structures. We examine F1F2SF3 and F1F2SF3F4 hybrids where a singlet superconductor (S) layer is sandwiched among ferromagnet (F) layers with differing thicknesses and magnetization orientations. Our results reveal a considerable number of experimentally viable spin-valve configurations that lead to on-off switching of the superconducting state. For S widths on the order of the superconducting coherence length ξ0, noncollinear magnetization orientations in adjacent F layers with multiple spin axes leads to a rich variety of triplet spin-valve effects. Motivated by recent experiments, we focus on samples where the magnetizations in the F1 and F4 layers exist in a fully spin-polarized half-metallic phase, and calculate the superconducting transition temperature, spatially and energy resolved density of states, and the spin-singlet and spin-triplet superconducting correlations. Our findings demonstrate that superconductivity in these devices can be completely switched on or off over a wide range of magnetization misalignment angles due to the generation of equal-spin and opposite-spin triplet pairings.

Magnetic transport property of NiFe/WSe{sub 2}/NiFe spin valve structure

Energy Technology Data Exchange (ETDEWEB)

Zhao, Kangkang [Key Lab of Opto-electronics Technology, Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Xing, Yanhui, E-mail: xingyanhui@bjut.edu.cn [Key Lab of Opto-electronics Technology, Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Han, Jun [Key Lab of Opto-electronics Technology, Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Feng, Jiafeng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences (CAS), Beijing 100190 (China); Shi, Wenhua; Zhang, Baoshun [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Zeng, Zhongming, E-mail: zmzeng2012@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2017-06-15

Highlight: • Two-dimensional (2D) materials have been proposed as promising candidate for spintronic applications due to their atomic crystal structure and physical properties. • In this article, we introduce exfoliated few-layer tungsten diselenide (WSe{sub 2}) as spacer in a Py/WSe{sub 2}/Py vertical spin valve. • In this junction, the WSe{sub 2} spacer exhibits metallic behavior. • We observed negative magnetoresistance (MR) with a ratio of −1.1% at 4 K and −0.21% at 300 K. • A general phenomenological analysis of the negative MR property is discussed. • Our result is anticipated to be beneficial for future spintronic applications. - Abstract: Two-dimensional (2D) materials have been proposed as promising candidate for spintronic applications due to their atomic crystal structure and physical properties. Here, we introduce exfoliated few-layer tungsten diselenide (WSe{sub 2}) as spacer in a Py/WSe{sub 2}/Py vertical spin valve. In this junction, the WSe{sub 2} spacer exhibits metallic behavior. We observed negative magnetoresistance (MR) with a ratio of −1.1% at 4 K and −0.21% at 300 K. A general phenomenological analysis of the negative MR property is discussed. Our result is anticipated to be beneficial for future spintronic applications.

Ultra-low-pressure sputtering to improve exchange bias and tune linear ranges in spin valves

Energy Technology Data Exchange (ETDEWEB)

Tang, XiaoLi, E-mail: tangtang1227@163.com; Yu, You; Liu, Ru; Su, Hua; Zhang, HuaiWu; Zhong, ZhiYong; Jing, YuLan

2017-05-01

A series of CoFe/IrMn exchange bilayers was grown by DC-sputtering at different ultra-low argon pressures ranging from 0.008 to 0.1 Pa. This pressure range was one to two orders lower than the normal sputtering pressure. Results revealed that the exchange bias increased from 140 to 250 Oe in CoFe(10 nm)/IrMn (15 nm) bilayers of fixed thickness because of the improved crystalline structure and morphological uniformity of films. Since ferromagnetic /antiferromagnetic (FM/AF) bilayers are always used in linear magnetic sensors as detection layers, the varying exchange bias can successfully achieve tunable linear range in a crossed pinning spin valve. The linear range could be adjustable from −80 Oe – +80 Oe to −150 Oe – +150 Oe on the basis of giant magnetoresistance responses. Therefore, this method provides a simple method to tune the operating range of magnetic field sensors. - Highlights: • Increasing exchange bias was achieved in bilayer at ultra-low-pressure sputtering. • The low void density and smooth surface were achieved in low pressure. • Varying exchange bias achieved tunable linear range in spin valve.

A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures

Science.gov (United States)

Mandal, Sumit; Saha, Shyamal K.

2014-10-01

Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing ID/IG ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest ID/IG, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures

Energy Technology Data Exchange (ETDEWEB)

Mandal, Sumit, E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

2014-10-15

Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing I{sub D}/I{sub G} ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest I{sub D}/I{sub G}, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

Verification of the Thomson-Onsager reciprocity relation for spin caloritronics

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2014-01-01

We investigate the Thomson-Onsager relation between the spin-dependent Seebeck and spin-dependent Peltier effect. To maintain identical device and measurement conditions we measure both effects in a single Ni80Fe20/Cu/Ni80Fe20 nanopillar spin valve device subjected to either an electrical or a

Reduction of ballistic spin scattering in a spin-FET using stray electric fields

International Nuclear Information System (INIS)

Nemnes, G A; Manolescu, A; Gudmundsson, V

2012-01-01

The quasi-bound states which appear as a consequence of the Rashba spin-orbit (SO) coupling, introduce a strongly irregular behavior of the spin-FET conductance at large Rashba parameter. Moreover, the presence of the bulk inversion asymmetry, i.e. the Dresselhaus SO coupling, may compromise the spin-valve effect even at small values of the Rashba parameter. However, by introducing stray electric fields in addition to the SO couplings, we show that the effect of the SO induced quasi-bound states can be tuned. The oscillations of the spin-resolved conductance become smoother and the control of the spin-FET characteristics becomes possible. For the calculations we employ a multi-channel scattering formalism, based on the R-matrix method extended to spin transport, in the presence of Rashba and Dresselhaus SO couplings.

Absence of hyperfine effects in 13C-graphene spin-valve devices

NARCIS (Netherlands)

Wojtaszek, M.; Vera-Marun, I.J.; Whiteway, E.; Hilke, M.; Wees, B.J. van

2014-01-01

The carbon isotope 13C, in contrast to 12C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of 13C in natural carbon allotropes (~1%). Chemical vapor deposition (CVD) allows for artificial synthesis of

Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers; Magnetotransport in Spinventil-Systemen mit amorphen magnetischen und supraleitenden Teilschichten

Energy Technology Data Exchange (ETDEWEB)

Steiner, Roland Johannes

2006-04-27

The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T{sub c}(H)- and the R(H)-curve. (orig.)

Superconducting spin-triplet-MRAM with infinite magnetoresistance ratio

Energy Technology Data Exchange (ETDEWEB)

Lenk, Daniel; Ullrich, Aladin; Obermeier, Guenter; Mueller, Claus; Krug von Nidda, Hans-Albrecht; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation); Zdravkov, Vladimir I. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Institute of Applied Physics and Interdisciplinary Nanoscience Center, Universitaet Hamburg, Jungiusstrasse 9A, D-20355 Hamburg (Germany); Sidorenko, Anatoli S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Tagirov, Lenar R. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation)

2016-07-01

We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, i.e. the superconducting transition temperature of this structure depends on its magnetic history. The observed spin-valve effect is based on the generation of the long range odd in frequency triplet component, arising from a non-collinear relative orientation of the constituent ferromagnetic layers. We investigated the effect both as a function of the sweep amplitude of the magnetic field, determining the magnetic history, and the applied transport current. Moreover, we demonstrate the possibility of switching the system from the normal o the superconducting state by applying field pulses, yielding an infinite magnetoresistance ratio.

Anisotropic spin relaxation in graphene

NARCIS (Netherlands)

Tombros, N.; Tanabe, S.; Veligura, A.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J.

2008-01-01

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular

Spin diffusion and torques in disordered antiferromagnets

KAUST Repository

Manchon, Aurelien

2017-02-01

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Spin diffusion and torques in disordered antiferromagnets

KAUST Repository

Manchon, Aurelien

2017-01-01

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

Science.gov (United States)

Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

2011-03-28

Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:

Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

Directory of Open Access Journals (Sweden)

Ma Jing-Min

2011-01-01

Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:

Investigations of the polymer/magnetic interface of organic spin-valves

Energy Technology Data Exchange (ETDEWEB)

Morley, N.A., E-mail: n.a.morley@sheffield.ac.uk [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Dost, R.; Lingam, A.S.V. [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Barlow, A.J. [National EPSRC XPS Users’ Service, School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

2015-12-30

Graphical abstract: - Highlights: • Metal carbide and sulphide species are detected at a polymer–magnetic interface. • Top magnetic electrodes on P3HT have uniaxial anisotropy. • Top magnetic electrodes on PBTTT are isotropic. - Abstract: This work investigates the top interface of an organic spin-valve, to determine the interactions between the polymer and top magnetic electrode. The polymers studied are regio-regular poly(3-hexylthiophene) (RR-P3HT) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (PBTTT) and the magnetic top electrodes are NiFe and Fe. X-ray photoelectron spectroscopy (XPS) is used to determine the bonding at the interface, along with the extent of how oxidised the magnetic layers are, while atomic force microscopy (AFM) is used to determine the surface roughness. A magneto-optic Kerr effect (MOKE) magnetometer is used to study the magnetic properties of the top electrode. It is shown that at the organic–magnetic interface the magnetic atoms interact with the polymer, as metallic–sulphide and metallic-carbide species are present at the interface. It is also shown that the structure of the polymer influences the anisotropy of the magnetic electrode, such that the magnetic electrodes grown on RR-P3HT have uniaxial anisotropy, while those grown on PBTTT are isotropic.

Measurement of variable magnetic reversal paths in electrically contacted pseudo-spin-valve rings

International Nuclear Information System (INIS)

Hayward, T J; Llandro, J; Schackert, F D O; Morecroft, D; Balsod, R B; Bland, J A C; Castano, F J; Ross, C A

2007-01-01

In this work we show that the measurement of single magnetic reversal events is of critical importance in order to correctly characterize the switching of magnetic microstructures. Magnetoresistance measurements are performed on two pseudo-spin-valve ring structures with high enough signal to noise to allow the probing of single reversal events. Using this technique we acquire 'switching spectra' which demonstrate that the rings exhibit a range of variable reversal paths, including a bistable reversal mechanism of the hard layer, where the two switching routes have substantially different switching fields. The signature of the variable reversal paths would have been obscured in field cycle averaged data and in the bistable case would cause a fundamental misinterpretation of the reversal behaviour

Coanda effect in valves

Directory of Open Access Journals (Sweden)

Uruba Václav

2017-01-01

Full Text Available Coanda effect takes place in flow within valves diffuser for certain conditions. The valve plug in half-closed position forms wall-jet, which could be stable or instable, depending on geometry and other conditions. This phenomenon was subject of experimental study using time-resolved PIV technique. For the acquired data analysis the special spatio-temporal methods have been used.

Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

International Nuclear Information System (INIS)

Daqiq, Reza; Ghobadi, Nader

2016-01-01

We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

Energy Technology Data Exchange (ETDEWEB)

Daqiq, Reza; Ghobadi, Nader

2016-07-15

We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

Science.gov (United States)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Spin Transfer Torque in Graphene

Science.gov (United States)

Lin, Chia-Ching; Chen, Zhihong

2014-03-01

Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

Preliminary assessment of valve IST effectiveness

International Nuclear Information System (INIS)

Grove, E.; DiBiasio, A.; Carbonaro, J.

1994-01-01

A preliminary review of inservice testing effectiveness for Code Class 1,2, and 3 valves at nuclear power plants was performed. These requirements are specified by the American Society of Mechanical Engineers Boiler and Pressure Vessel Code, Section XI, and the Operations and Maintenance Standard. The Institute of Nuclear Power Operations Nuclear Plant Reliability Data System (NPRDS) database was used to provide failure reports for these components for 1988 to 1992. This time period coincides with the issuance of Generic Letter 89-04, which resulted in a more consistent application of the requirements by the licensees. For this time period, 8,593 valve failures were identified. From the review of the NPRDS database, the primary failure causes and failure modes for motor-operated valves (MOV), air-operated valves (AOV), and check valves (CV) were identified. Solenoid-operated valves were not reviewed in this study. Plant testing programs were effective in identifying approximately 60% of the CV failures, 46% of the AOV failures, and 44% of the MOV failures

Spin Hall effects

Science.gov (United States)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

Magnetic proximity control of spin currents and giant spin accumulation in graphene

Science.gov (United States)

Singh, Simranjeet

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

Development of an effective valve packing program

Energy Technology Data Exchange (ETDEWEB)

Hart, K.A.

1996-12-01

Current data now shows that graphite valve packing installed within the guidance of a controlled program produces not only reliable stem sealing but predictable running loads. By utilizing recent technological developments in valve performance monitoring for both MOV`s and AOV`s, valve packing performance can be enhanced while reducing maintenance costs. Once known, values are established for acceptable valve packing loads, the measurement of actual valve running loads via the current MOV/AOV diagnostic techniques can provide indication of future valve stem sealing problems, improper valve packing installation or identify the opportunity for valve packing program improvements. At times the full benefit of these advances in material and predictive technology remain under utilized due to simple past misconceptions associated with valve packing. This paper will explore the basis for these misconceptions, provide general insight into the current understanding of valve packing and demonstrate how with this new understanding and current valve diagnostic equipment the key aspects required to develop an effective, quality valve packing program fit together. The cost and operational benefits provided by this approach can be significant impact by the: elimination of periodic valve repacking, reduction of maintenance costs, benefits of leak-free valve operation, justification for reduced Post Maintenance Test Requirements, reduced radiation exposure, improved plant appearance.

Bioprosthetic Valve Fracture Improves the Hemodynamic Results of Valve-in-Valve Transcatheter Aortic Valve Replacement.

Science.gov (United States)

Chhatriwalla, Adnan K; Allen, Keith B; Saxon, John T; Cohen, David J; Aggarwal, Sanjeev; Hart, Anthony J; Baron, Suzanne J; Dvir, Danny; Borkon, A Michael

2017-07-01

Valve-in-valve (VIV) transcatheter aortic valve replacement (TAVR) may be less effective in small surgical valves because of patient/prosthesis mismatch. Bioprosthetic valve fracture (BVF) using a high-pressure balloon can be performed to facilitate VIV TAVR. We report data from 20 consecutive clinical cases in which BVF was successfully performed before or after VIV TAVR by inflation of a high-pressure balloon positioned across the valve ring during rapid ventricular pacing. Hemodynamic measurements and calculation of the valve effective orifice area were performed at baseline, immediately after VIV TAVR, and after BVF. BVF was successfully performed in 20 patients undergoing VIV TAVR with balloon-expandable (n=8) or self-expanding (n=12) transcatheter valves in Mitroflow, Carpentier-Edwards Perimount, Magna and Magna Ease, Biocor Epic and Biocor Epic Supra, and Mosaic surgical valves. Successful fracture was noted fluoroscopically when the waist of the balloon released and by a sudden drop in inflation pressure, often accompanied by an audible snap. BVF resulted in a reduction in the mean transvalvular gradient (from 20.5±7.4 to 6.7±3.7 mm Hg, P valve effective orifice area (from 1.0±0.4 to 1.8±0.6 cm 2 , P valves to facilitate VIV TAVR with either balloon-expandable or self-expanding transcatheter valves and results in reduced residual transvalvular gradients and increased valve effective orifice area. © 2017 American Heart Association, Inc.

Effect of spin rotation coupling on spin transport

International Nuclear Information System (INIS)

Chowdhury, Debashree; Basu, B.

2013-01-01

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k → ⋅p → perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k → ⋅p → framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied

Effect of spin rotation coupling on spin transport

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2013-12-15

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k{sup →}⋅p{sup →} perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k{sup →}⋅p{sup →} framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied.

Spin injection and transport in semiconductor and metal nanostructures

Science.gov (United States)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

Ultra-Compact 100 × 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors

Directory of Open Access Journals (Sweden)

Diana C. Leitao

2015-12-01

Full Text Available Magnetic field mapping with micrometric spatial resolution and high sensitivity is a challenging application, and the technological solutions are usually based on large area devices integrating discrete magnetic flux guide elements. In this work we demonstrate a high performance hybrid device with improved field sensitivity levels and small footprint, consisting of a ultra-compact 2D design where nanometric spin valve sensors are inserted within the gap of thin-film magnetic flux concentrators. Pole-sensor distances down to 400 nm are demonstrated using nanofabrication techniques combined with an optimized liftoff process. These 100 × 100 μm 2 pixel sensors can be integrated in modular devices for surface mapping without moving parts.

Magnetic resonance imaging in patients with heart valve prostheses

International Nuclear Information System (INIS)

Bachmann, R.; Juengehuelsing, M.; Schicha, H.; Deutsch, H.J.; Sechtem, U.; Hilger, H.H.

1991-01-01

Artifical valve prostheses are often regarded as a contraindication for magnetic resonance imaging (MRI), although preliminary in vitro studies suggested, that patients with these metallic implants might safely undergo MR examination. This study reports on the experience with a group of 89 patients with 100 heart valve prostheses who were examined by spin-echo MR and gradient-echo MR. MR examination was performed in all patients without complications. The spin-echo sequence showed advantages in the depiction of anatomical structures like paravalvular abcesses. Anatomical structures adjacent to the artificial valve were clearly visivle and the metal components of the valves showes no or only small artifacts. Artifacts were accentuated when using gradient-echo sequences. Gradient-echo sequences provided valuable information regarding the presence of valvular insufficiency. Physiological valvular regurgitation was easy to differentiate from pathological paravalvular or transvalvular regurgitation. These results demonstrate that patients with artificial valve prostheses can be imaged by MR without risk and that prosthesis-induced artifacts do no interfere with image interpretation. (orig.) [de

Exchange bias mechanism in FM/FM/AF spin valve systems in the presence of random unidirectional anisotropy field at the AF interface: The role played by the interface roughness due to randomness

Science.gov (United States)

Yüksel, Yusuf

2018-05-01

We propose an atomistic model and present Monte Carlo simulation results regarding the influence of FM/AF interface structure on the hysteresis mechanism and exchange bias behavior for a spin valve type FM/FM/AF magnetic junction. We simulate perfectly flat and roughened interface structures both with uncompensated interfacial AF moments. In order to simulate rough interface effect, we introduce the concept of random exchange anisotropy field induced at the interface, and acting on the interface AF spins. Our results yield that different types of the random field distributions of anisotropy field may lead to different behavior of exchange bias.

Observation of spin-polarized electron transport in Alq3 by using a low work function metal

Science.gov (United States)

Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

2012-09-01

We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

Nanoscale magnetic characterization of tunneling magnetoresistance spin valve head by electron holography.

Science.gov (United States)

Park, Hyun Soon; Hirata, Kei; Yanagisawa, Keiichi; Ishida, Yoichi; Matsuda, Tsuyoshi; Shindo, Daisuke; Tonomura, Akira

2012-12-07

Nanostructured magnetic materials play an important role in increasing miniaturized devices. For the studies of their magnetic properties and behaviors, nanoscale imaging of magnetic field is indispensible. Here, using electron holography, the magnetization distribution of a TMR spin valve head of commercial design is investigated without and with a magnetic field applied. Characterized is the magnetic flux distribution in complex hetero-nanostructures by averaging the phase images and separating their component magnetic vectors and electric potentials. The magnetic flux densities of the NiFe (shield and 5 nm-free layers) and the CoPt (20 nm-bias layer) are estimated to be 1.0 T and 0.9 T, respectively. The changes in the magnetization distribution of the shield, bias, and free layers are visualized in situ for an applied field of 14 kOe. This study demonstrates the promise of electron holography for characterizing the magnetic properties of hetero-interfaces, nanostructures, and catalysts. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling the collective excitations in a full Heusler Co2 FeAl0.5 Si0.5 (CFAS) spin valve magnetic nanopillar in the electromagnetic field

International Nuclear Information System (INIS)

David, Cherine; Arumugam, Brinda; Rajamani, Amuda; Natarajan, Kanimozhi

2014-01-01

This paper describes the physics of collective excitations that are caused by spin-transfer torques in CFAS magnetic multilayer. When the magnetizations of the pinned and free layers are not collinear with each other, the spin-polarized currents transfer angular momentum to the magnetizations near the interfaces, giving rise to spin-transfer torques. The currents in magnetic multilayer are spin polarised and can carry enough angular momentum. When an electron spin carried by the current interacts with a magnetic layer, the exchange interaction leads to torque between the spin and the magnetization vector of the free layer. This is Spin Transfer Torque (STT) and it excites the magnetization when it is large enough. The Spin Transfer Torque induced collective excitations for the CFAS spin valve pillar have been extensively studied in this paper. - Highlights: • We have modeled LLGS equation for CFAS multilayer array. • The dynamics of collective excitation induced by STT is investigated. • The interactions exhibit solitonic behaviour at both limiting modes of polarization. • The spin components of the solitons are graphically represented

Ferromagnetic resonance study of the half-Heusler alloy NiMnSb. The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators

Energy Technology Data Exchange (ETDEWEB)

Riegler, Andreas

2011-11-25

Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO)), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10{sup -3} range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron

Effect of the mitral valve on diastolic flow patterns

International Nuclear Information System (INIS)

Seo, Jung Hee; Vedula, Vijay; Mittal, Rajat; Abraham, Theodore; Dawoud, Fady; Luo, Hongchang; Lardo, Albert C.

2014-01-01

The leaflets of the mitral valve interact with the mitral jet and significantly impact diastolic flow patterns, but the effect of mitral valve morphology and kinematics on diastolic flow and its implications for left ventricular function have not been clearly delineated. In the present study, we employ computational hemodynamic simulations to understand the effect of mitral valve leaflets on diastolic flow. A computational model of the left ventricle is constructed based on a high-resolution contrast computed-tomography scan, and a physiological inspired model of the mitral valve leaflets is synthesized from morphological and echocardiographic data. Simulations are performed with a diode type valve model as well as the physiological mitral valve model in order to delineate the effect of mitral-valve leaflets on the intraventricular flow. The study suggests that a normal physiological mitral valve promotes the formation of a circulatory (or “looped”) flow pattern in the ventricle. The mitral valve leaflets also increase the strength of the apical flow, thereby enhancing apical washout and mixing of ventricular blood. The implications of these findings on ventricular function as well as ventricular flow models are discussed

Electrical spin injection and detection in silicon nanowires with axial doping gradient.

Science.gov (United States)

Kountouriotis, Konstantinos; Barreda, Jorge L; Keiper, Timothy David; Zhang, Mei; Xiong, Peng

2018-06-13

The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nano-spintronic devices with quasi-1D semiconductor channels.

Effects of the blockage ratio of a valve disk on loss coefficient in a butterfly valve

International Nuclear Information System (INIS)

Rho, Hyung Joon; Lee, Jee Keun; Choi, Hee Joo

2008-01-01

The loss coefficient of the butterfly valve which allows partial opening of the valve at closed position and is applicable to the small-sized pipe system with the diameter of 1 inch was measured for the variation of the valve disk blockage ratio. Two different types of the valve disk configuration to adjust the blockage ratio were considered. One was the solid type valve disk of which the diameter was changed into the smaller size rather than the pipe diameter, and the other was the perforate type valve disk on which some holes were perforated. The results from two types of valve disk were compared to identify their characteristics in the loss coefficient distributions. The loss coefficient and the controllable angle of the valve disk were decreased exponentially with the decrease of the blockage ratio. In addition, the perforate valve disk had the effect on the higher loss coefficient rather than the solid type valve disk

Large spin accumulation due to spin-charge coupling across a break-junction

Science.gov (United States)

Chen, Shuhan; Zou, Han; Chui, Siu-Tat; Ji, Yi

2013-03-01

We investigate large spin signals in break-junction nonlocal spin valves (NLSV). The break-junction is a nanometer-sized vacuum tunneling gap between the spin detector and the nonmagnetic channel, formed by electro-static discharge. The spin signals can be either inverted or non-inverted and the magnitudes are much larger than those of standard NLSV. Spin signals with high percentage values (10% - 0%) have been observed. When the frequency of the a.c. modulation is varied, the absolute magnitudes of signals remain the same although the percentage values change. These observations affirm the nonlocal nature of the measurements and rule out local magnetoresistive effects. Owing to the spin-charge coupling across the break-junction, the spin accumulation in a ferromagnet splits into two terms. One term decays on the charge screening length (0.1 nm) and the other decays on the spin diffusion length (10 nm nm). The magnitude of the former is proportional to the resistance of the junction. Therefore a highly resistive break-junction leads to a large spin accumulation and thereby a large spin signal. The signs of the spin signal are determined by the relationship between spin-dependent conductivities, diffusion constants, and density of states of the ferromagnet. This work was supported by US DOE grant No. DE-FG02-07ER46374.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

Science.gov (United States)

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

Spin-valves with modified synthetic antiferromagnets exhibiting an enhanced bias point control capability at submicrometer dimensions

International Nuclear Information System (INIS)

Park, J.-S.; Lee, S.-R.; Kim, Y.K.

2004-01-01

Bias point control is of practical importance for operating read sensors for magnetic recording and magnetic random access memory devices. To attain bias point control capability, in particular, at submicrometer cell size, a modified synthetic antiferromagnet-based spin-valve (MSSV) structure was devised. A series of calculations were carried out to investigate the effect of size variation on their MR transfer behaviors. The cell dimension was varied from 10 to 0.05 μm. The typical MSSV comprises IrMn (9.0)/CoFe (P1, 1.5)/Ru (0.7)/CoFe (P2, 3.0)/Ru (0.7)/CoFe (P3, 1.5)/Cu (2.8)/CoFe (1.6)/NiFe (3.2) (in nm). As the cell size decreased, the bias point in the MSSV maintained nearly zero regardless of the cell size. The bias point was further tuned by varying the P3 layer thickness. Moreover, the effective exchange field (H ex.eff ) of the MSSV was much larger than that of the conventional SSV. The field sensitivity of the MSSV was very high indicating that the free layer can rotate more sharply

Spin-valves with modified synthetic antiferromagnets exhibiting an enhanced bias point control capability at submicrometer dimensions

Science.gov (United States)

Park, Jeong-Suk; Lee, Seong-Rae; Kim, Young Keun

2004-08-01

Bias point control is of practical importance for operating read sensors for magnetic recording and magnetic random access memory devices. To attain bias point control capability, in particular, at submicrometer cell size, a modified synthetic antiferromagnet-based spin-valve (MSSV) structure was devised. A series of calculations were carried out to investigate the effect of size variation on their MR transfer behaviors. The cell dimension was varied from 10 to 0.05 μm. The typical MSSV comprises IrMn (9.0)/CoFe (P1, 1.5)/Ru (0.7)/CoFe (P2, 3.0)/Ru (0.7)/CoFe (P3, 1.5)/Cu (2.8)/CoFe (1.6)/NiFe (3.2) (in nm). As the cell size decreased, the bias point in the MSSV maintained nearly zero regardless of the cell size. The bias point was further tuned by varying the P3 layer thickness. Moreover, the effective exchange field ( Hex.eff) of the MSSV was much larger than that of the conventional SSV. The field sensitivity of the MSSV was very high indicating that the free layer can rotate more sharply.

Biomolecule detection using wheatstone bridge giant magnetoresistance (GMR) sensors based on CoFeB spin-valve thin film

Science.gov (United States)

Elda Swastika, P.; Antarnusa, G.; Suharyadi, E.; Kato, T.; Iwata, S.

2018-04-01

A potential wheatstone bridge giant magnetoresistance (GMR) biosensor have been successfully developed for biomolecule detection. [IrMn(10 nm)/CoFe(3 nm)/Cu(2.2 nm)/CoFeB(10 nm)] spin-valve structure has been chosen as the magnetic sensing surface, showing a magnetoresistance (MR) of 6% fabricated by DC magnetron sputtering method. The Fe3O4 magnetic nanoparticles used as biomolecular labels (nanotags) was synthesized by co-precipitation method, exhibiting soft magnetic behavior with saturation magnetization (Ms), remanent magnetization (Mr) and coercivity (Hc) is 77.2 emu/g, 7.8 emu/g and 51 Oe, respectively. The X-ray diffraction (XRD) patterns and transmission electron microscopy (TEM) images showed that Fe3O4 was well crystallized and grew in their inverse spinel structure, highly uniform morphology with an average grain size was about 20 nm. Fe3O4 was coated with polyethylene-glycol (PEG)-4000 for surface functionalization. Detection of biomolecule such as formalin, gelatin from bovine-skin and porcine-skin were dispersed in ethanol at room temperature. Induction would cause a shift in output voltage with a minimum delta output voltage (ΔV) 4.937 mV (10%) for formalin detection, 2.268 mV (7%) for bovine-skin gelatin and 2.943 mV (7%) for porcine-skin gelatin detection. The ΔV of the wheatstone bridge in real-time measurement decrease by increase in biomolecules concentration. The change of ΔV with various concentration of biomolecule indicates that the spin-valve thin film with wheatstone-bridge circuit is potential as a biosensor.

Novel room-temperature spin-valve-like magnetoresistance in magnetically coupled nano-column Fe3O4/Ni heterostructure.

Science.gov (United States)

Xiao, Wen; Song, Wendong; Herng, Tun Seng; Qin, Qing; Yang, Yong; Zheng, Ming; Hong, Xiaoliang; Feng, Yuan Ping; Ding, Jun

2016-08-25

Herein, we design a room-temperature spin-valve-like magnetoresistance in a nano-column Fe3O4/Ni heterostructure without using a non-magnetic spacer or pinning layer. An Fe3O4 nano-column film is self-assembled on a Ni underlayer by the thermal decomposition method. The wet-chemical self-assembly is facile, economical and scalable. The magnetoresistance (MR) response of the Ni underlayer in the heterostructure under positive and negative out-of-plane magnetic fields differ by ∼0.25 at room temperature and ∼0.43 at 100 K. We attribute the spin-valve-like magnetoresistance to the unidirectional magnetic anisotropy of the Ni underlayer when being magnetically coupled by the Fe3O4 nano-column film. The out-of-plane negative-field magnetization is higher than the positive-field magnetization, affirming the unidirectional magnetic anisotropy of the Fe3O4/Ni heterostructure. Temperature-dependent magnetic and resistivity studies illustrate a close correlation between the magnetization transition of Fe3O4 and resistivity transition of Ni and prove a magnetic coupling between the Fe3O4 and Ni. First-principles calculations reveal that the Fe3O4/Ni model under a negative magnetic field is energetically more stable than that under a positive magnetic field. Furthermore, partial density of states (PDOS) analysis demonstrates the unidirectional magnetic anisotropy of the Ni 3d orbital. This is induced by the strong ferromagnetic coupling between Fe3O4 and Ni via oxygen-mediated Fe 3d-O 2p-Ni 3d hybridizations.

Possibility of Cooper-pair formation controlled by multi-terminal spin injection

Science.gov (United States)

Ohnishi, K.; Sakamoto, M.; Ishitaki, M.; Kimura, T.

2018-03-01

A multi-terminal lateral spin valve consisting of three ferromagnetic nanopillars on a Cu/Nb bilayer has been fabricated. We investigated the influence of the spin injection on the superconducting properties at the Cu/Nb interface. The non-local spin valve signal exhibits a clear spin insulation signature due to the superconducting gap of the Nb. The magnitude of the spin signal is found to show the probe configuration dependence. From the careful analysis of the bias current dependence, we found the suppression of the superconductivity due to the exchange interaction between the Cooper pair and accumulated spin plays an important role in the multi-terminal spin injections. We also discuss about the possibility of the Cooper-pair formation due to the spin injection from the two injectors with the anti-parallel alignment.

Flow oscillations on the steam control valve in the middle opening condition. Clarification of the effects of valve body and valve seat by steam experiments

International Nuclear Information System (INIS)

Morita, Ryo; Inada, Fumio

2007-01-01

A steam control valve might cause vibrations of piping when the valve opening is in a middle condition. For rationalization of maintenance and management of the plant, the valve should be improved, but it is difficult to understand flow characteristics in detail by experiment because flow around the valve is complex 3D structure and becomes supersonic (M>1). Therefore, it is necessary to clarify the cause of the vibrations and to develop the countermeasures by CFD (Computational Fluid Dynamics) technology. In previous researches, we clarified a mechanism of the pressure fluctuations in the middle opening condition and suggested the new valve shape (named 'Extended Valve') that can suppress the pressure fluctuations by air experiments and CFD calculations. Then, we also conducted steam experiments and CFD calculations to understand the differences between air and the steam, and found that the pressure fluctuations in the middle opening condition also occurred in the steam tests and the differences between the air and steam were not remarkable. In this report, to clarify the effects of valve and valve seat shape in steam flow condition, we conduct the steam experiments with various valve and seat shape. As a result, we find the change of the valve seat can decrease the amplitude of pressure fluctuations, but can not quite suppress the pressure fluctuations in the middle opening condition. Then, we apply the 'Extended Valve' to clarify the valve shape effect, and find that the extended valve suppresses the pressure fluctuations in the middle opening condition completely and decreases the pressure amplitude drastically. (author)

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

Science.gov (United States)

Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

2017-06-27

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Compound nucleus effects in spin-spin cross sections

International Nuclear Information System (INIS)

Thompson, W.J.

1976-01-01

By comparison with recent data, it is shown that spin-spin cross sections for low-energy neutrons may be dominated by a simple compound-elastic level-density effect, independent of spin-spin terms in the nucleon-nucleus optical-model potential. (Auth.)

Spin transport and relaxation in graphene

International Nuclear Information System (INIS)

Han Wei; McCreary, K.M.; Pi, K.; Wang, W.H.; Li Yan; Wen, H.; Chen, J.R.; Kawakami, R.K.

2012-01-01

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Directory of Open Access Journals (Sweden)

Robert Göckeritz

2016-04-01

Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

Bioprosthetic Valve Fracture to Facilitate Transcatheter Valve-in-Valve Implantation.

Science.gov (United States)

Allen, Keith B; Chhatriwalla, Adnan K; Cohen, David J; Saxon, John T; Aggarwal, Sanjeev; Hart, Anthony; Baron, Suzanne; Davis, J Russell; Pak, Alex F; Dvir, Danny; Borkon, A Michael

2017-11-01

Valve-in-valve transcatheter aortic valve replacement is less effective in small surgical bioprostheses. We evaluated the feasibility of bioprosthetic valve fracture with a high-pressure balloon to facilitate valve-in-valve transcatheter aortic valve replacement. In vitro bench testing on aortic tissue valves was performed on 19-mm and 21-mm Mitroflow (Sorin, Milan, Italy), Magna and Magna Ease (Edwards Lifesciences, Irvine, CA), Trifecta and Biocor Epic (St. Jude Medical, Minneapolis, MN), and Hancock II and Mosaic (Medtronic, Minneapolis, MN). High-pressure balloons Tru Dilation, Atlas Gold, and Dorado (C.R. Bard, Murray Hill, NJ) were used to determine which valves could be fractured and at what pressure fracture occurred. Mitroflow, Magna, Magna Ease, Mosaic, and Biocor Epic surgical valves were successfully fractured using high-pressures balloon 1 mm larger than the labeled valve size whereas Trifecta and Hancock II surgical valves could not be fractured. Only the internal valve frame was fractured, and the sewing cuff was never disrupted. Manufacturer's rated burst pressures for balloons were exceeded, with fracture pressures ranging from 8 to 24 atmospheres depending on the surgical valve. Testing further demonstrated that fracture facilitated the expansion of previously constrained, underexpanded transcatheter valves (both balloon and self-expanding) to the manufacturer's recommended size. Bench testing demonstrates that the frame of most, but not all, bioprosthetic surgical aortic valves can be fractured using high-pressure balloons. The safety of bioprosthetic valve fracture to optimize valve-in-valve transcatheter aortic valve replacement in small surgical valves requires further clinical investigation. Copyright © 2017 The Society of Thoracic Surgeons. Published by Elsevier Inc. All rights reserved.

Gate-tunable valley-spin filtering in silicene with magnetic barrier

Energy Technology Data Exchange (ETDEWEB)

Wu, X. Q., E-mail: xianqiangzhe@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Meng, H. [School of Physics and Telecommunication Engineering, Shanxi University of Technology, Hanzhong 723001 (China)

2015-05-28

We theoretically study the valley- and spin-resolved scattering through magnetic barrier in a one layer thick silicene, using the mode-matching method for the Dirac equation. We show that the spin-valley filtering effect can be achieved and can also be tuned completely through both a top and bottom gate. Moreover, when reversing the sign of the staggered potential, we find the direction of the valley polarization is switched while the direction of spin polarization is unchanged. These results can provide some meaningful information to design valley valve residing on silicene.

Magnetocaloric effect in quantum spin-s chains

Directory of Open Access Journals (Sweden)

A. Honecker

2009-01-01

Full Text Available We compute the entropy of antiferromagnetic quantum spin-s chains in an external magnetic field using exact diagonalization and Quantum Monte Carlo simulations. The magnetocaloric effect, i. e., temperature variations during adiabatic field changes, can be derived from the isentropes. First, we focus on the example of the spin-s=1 chain and show that one can cool by closing the Haldane gap with a magnetic field. We then move to quantum spin-s chains and demonstrate linear scaling with s close to the saturation field. In passing, we propose a new method to compute many low-lying excited states using the Lanczos recursion.

On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

Directory of Open Access Journals (Sweden)

A.A. Baker

Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Science.gov (United States)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

Science.gov (United States)

Lou, Xiaohua

2007-03-01

A fully electrical scheme of spin injection, transport, and detection in a single ferromagnet-semiconductor structure has been a long-standing goal in the field of spintronics. In this talk, we report on an experimental demonstration of such a scheme. The devices are fabricated from epitaxial Fe/GaAs (100) heterostructures with highly doped GaAs as a Schottky tunnel barrier. A set of closely spaced Fe contacts on the top of an n-GaAs channel are used as spin injectors and detectors. Reference electrodes are placed at the far ends of the channel, allowing for non-local spin detection [1]. The electro-chemical potential of the detector is sensitive to the relative magnetizations of the injector and detector. In spin-valve measurements, a magnetic field is applied along the Fe easy axis to switch the relative magnetizations of injector and detector from parallel to antiparallel, resulting in a voltage jump that is proportional to the non-equilibrium spin polarization in the channel. A more rigorous test of electrical spin detection is the observation of the Hanle effect, in which an out-of-plane magnetic field is used to modulate and dephase the spin polarization in the channel. The magnitudes of the observed Hanle curves agree with the results of the spin-valve measurements. The dependence of the Hanle curves on temperature and contact separation is studied in detail and is consistent with a drift-diffusion model incorporating spin precession and relaxation. The spin polarization generated by spin injection (reverse bias at the injector) or spin accumulation (forward bias at the injector) is measured using the magneto-optical Kerr effect and is found to be in good agreement with the spin-dependent non-local voltage. Both the transport and optical measurements show a non-linear relationship between the bias voltage at the injector and the spin polarization in the channel. [1] M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

KAUST Repository

Manchon, Aurelien

2011-05-17

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

Observation of the spin Nernst effect

Science.gov (United States)

Meyer, S.; Chen, Y.-T.; Wimmer, S.; Althammer, M.; Wimmer, T.; Schlitz, R.; Geprägs, S.; Huebl, H.; Ködderitzsch, D.; Ebert, H.; Bauer, G. E. W.; Gross, R.; Goennenwein, S. T. B.

2017-10-01

The observation of the spin Hall effect triggered intense research on pure spin current transport. With the spin Hall effect, the spin Seebeck effect and the spin Peltier effect already observed, our picture of pure spin current transport is almost complete. The only missing piece is the spin Nernst (-Ettingshausen) effect, which so far has been discussed only on theoretical grounds. Here, we report the observation of the spin Nernst effect. By applying a longitudinal temperature gradient, we generate a pure transverse spin current in a Pt thin film. For readout, we exploit the magnetization-orientation-dependent spin transfer to an adjacent yttrium iron garnet layer, converting the spin Nernst current in Pt into a controlled change of the longitudinal and transverse thermopower voltage. Our experiments show that the spin Nernst and the spin Hall effect in Pt are of comparable magnitude, but differ in sign, as corroborated by first-principles calculations.

Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei; Pearson, John E.; Hoffmann, Axel [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Vlaminck, Vincent [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Colegio de Ciencias e Ingenería, Universidad San Fransciso de Quito, Quito (Ecuador); Divan, Ralu [Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States); Bader, Samuel D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States)

2013-12-09

The spin diffusion length of Pt at room temperature and at 8 K is experimentally determined via spin pumping and spin Hall effect in permalloy/Pt bilayers. Voltages generated during excitation of ferromagnetic resonance from the inverse spin Hall effect and anisotropic magnetoresistance effect were investigated with a broadband approach. Varying the Pt layer thickness gives rise to an evolution of the voltage line shape due to the superposition of the above two effects. By studying the ratio of the two voltage components with the Pt layer thickness, the spin diffusion length of Pt can be directly extracted. We obtain a spin diffusion length of ∼1.2 nm at room temperature and ∼1.6 nm at 8 K.

Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

Science.gov (United States)

Katti, R. R.; Zou, D.; Reed, D.; Schipper, D.; Hynes, O.; Shaw, G.; Kaakani, H.

2003-05-01

Prior work has shown that current-in-plane (CIP) giant magnetoresistive (GMR) pseudo-spin-valve (PSV) devices grown on bulk Si wafers and bulk complementary metal-oxide semiconductor (CMOS) underlayers exhibit write and read characteristics that are suitable for application as nonvolatile memory devices. In this work, CIP GMR PSV devices fabricated on silicon-on-insulator CMOS underlayers are shown to support write and read performance. Reading and writing fields for selected devices are shown to be approximately 25%-50% that of unselected devices, which provides a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits. The switching characteristics of experimental devices were compared to and found to be similar with Landau-Lifschitz-Gilbert micromagnetic modeling results, which allowed inferring regions of reversible and irreversible rotations in magnetic reversal processes.

Steps toward an all-electric spin valve using side-gated quantum point contacts with lateral spin-orbit coupling

Science.gov (United States)

Bhandari, Nikhil; Dutta, Maitreya; Charles, James; Newrock, Richard S.; Cahay, Marc; Herbert, Stephen T.

2013-03-01

Spin-based electronics or ‘spintronics’ has been a topic of interest for over two decades. Electronic devices based on the manipulation of the electron spin are believed to offer the possibility of very small, non-volatile and ultrafast devices with very low power consumption. Since the proposal of a spin-field-effect transistor (SpinFET) by Datta and Das in 1990, many attempts have been made to achieve spin injection, detection and manipulation in semiconductor materials either by incorporating ferromagnetic materials into device architectures or by using external magnetic fields. This approach has significant design complexities, partly due to the influence of stray magnetic fields on device operation. In addition, magnetic electrodes can have magneto-resistance and spurious Hall voltages that can complicate device performance. To date, there has been no successful report of a working Datta-Das SpinFET. Over the last few years we have investigated an all-electric means of manipulating spins, one that only relies on electric fields and voltages and not on ferromagnetic materials or external magnetic fields. We believe we have found a pathway toward this goal, using in-plane side-gated quantum point contacts (QPCs) that rely on lateral spin-orbit coupling to create spin polarization. In this paper we discuss several aspects of our work, beginning with our finding what we believe is nearly complete spin-polarization in InAs QPCs by purely electrical means, our theoretical work to understand the basic mechanisms leading to that situation (asymmetric lateral confinement, lateral spin-orbit coupling and a strong e-e interaction), and our recent work extending the effort to GaAs and to dual QPC systems where one QPC acts as a polarizer and the other as an analyzer. Keynote talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Protecting nickel with graphene spin-filtering membranes: A single layer is enough

Energy Technology Data Exchange (ETDEWEB)

Martin, M.-B.; Dlubak, B.; Piquemal-Banci, M.; Collin, S.; Petroff, F.; Anane, A.; Fert, A.; Seneor, P. [Unité Mixte de Physique CNRS/Thales, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France and Université Paris Sud, 91405 Orsay (France); Weatherup, R. S.; Hofmann, S.; Robertson, J. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Yang, H. [IBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Blume, R. [Helmholtz-Zentrum Berlin fur Materialien und Energie, 12489 Berlin (Germany); Schloegl, R. [Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany)

2015-07-06

We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the sign reversal of the measured magnetoresistance.

Injection and Scattering of Polarized Spins at Nanoscale Polymer Interfaces

National Research Council Canada - National Science Library

Epstein, Arthur J

2004-01-01

We made excellent progress several directions. We demonstrated that V[TCNE]̃2 is a room temperature fully spin polarized magnetic semiconductor of interest for spintronic applications, including spin valves...

Effects of valve timing, valve lift and exhaust backpressure on performance and gas exchanging of a two-stroke GDI engine with overhead valves

International Nuclear Information System (INIS)

Dalla Nora, Macklini; Lanzanova, Thompson Diórdinis Metzka; Zhao, Hua

2016-01-01

Highlights: • Two-stroke operation was achieved in a four-valve direct injection gasoline engine. • Shorter valve opening durations improved torque at lower engine speeds. • The longer the valve opening duration, the lower was the air trapping efficiency. • Higher exhaust backpressure and lower valve lift reduced the compressor work. - Abstract: The current demand for fuel efficient and lightweight powertrains, particularly for application in downsized and hybrid electric vehicles, has renewed the interest in two-stroke engines. In this framework, an overhead four-valve spark-ignition gasoline engine was modified to run in the two-stroke cycle. The scavenging process took place during a long valve overlap period around bottom dead centre at each crankshaft revolution. Boosted intake air was externally supplied at a constant pressure and gasoline was directly injected into the cylinder after valve closure. Intake and exhaust valve timings and lifts were independently varied through an electrohydraulic valve train, so their effects on engine performance and gas exchanging were investigated at 800 rpm and 2000 rpm. Different exhaust backpressures were also evaluated by means of exhaust throttling. Air trapping efficiency, charging efficiency and scavenge ratio were calculated based on air and fuel flow rates, and exhaust oxygen concentration at fuel rich conditions. The results indicated that longer intake and exhaust valve opening durations increased the charge purity and hence torque at higher engine speeds. At lower speeds, although, shorter valve opening durations increased air trapping efficiency and reduced the estimated supercharger power consumption due to lower air short-circuiting. A strong correlation was found between torque and charging efficiency, while air trapping efficiency was more associated to exhaust valve opening duration. The application of exhaust backpressure, as well as lower intake/exhaust valve lifts, made it possible to increase

ac spin-Hall effect

International Nuclear Information System (INIS)

Entin-Wohlman, O.

2005-01-01

Full Text:The spin-Hall effect is described. The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(ω) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to ω 2 . At non-zero temperatures the coupling to the phonons yields an imaginary term proportional to ω. The interference also yields persistent spin currents at thermal equilibrium, at E = 0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Science.gov (United States)

Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

2017-03-01

We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

Bioprosthetic Valve Fracture During Valve-in-valve TAVR: Bench to Bedside.

Science.gov (United States)

Saxon, John T; Allen, Keith B; Cohen, David J; Chhatriwalla, Adnan K

2018-01-01

Valve-in-valve (VIV) transcatheter aortic valve replacement (TAVR) has been established as a safe and effective means of treating failed surgical bioprosthetic valves (BPVs) in patients at high risk for complications related to reoperation. Patients who undergo VIV TAVR are at risk of patient-prosthesis mismatch, as the transcatheter heart valve (THV) is implanted within the ring of the existing BPV, limiting full expansion and reducing the maximum achievable effective orifice area of the THV. Importantly, patient-prosthesis mismatch and high residual transvalvular gradients are associated with reduced survival following VIV TAVR. Bioprosthetic valve fracture (BVF) is as a novel technique to address this problem. During BPV, a non-compliant valvuloplasty balloon is positioned within the BPV frame, and a highpressure balloon inflation is performed to fracture the surgical sewing ring of the BPV. This allows for further expansion of the BPV as well as the implanted THV, thus increasing the maximum effective orifice area that can be achieved after VIV TAVR. This review focuses on the current evidence base for BVF to facilitate VIV TAVR, including initial bench testing, procedural technique, clinical experience and future directions.

Radiation reaction for spinning bodies in effective field theory. I. Spin-orbit effects

Science.gov (United States)

Maia, Natália T.; Galley, Chad R.; Leibovich, Adam K.; Porto, Rafael A.

2017-10-01

We compute the leading post-Newtonian (PN) contributions at linear order in the spin to the radiation-reaction acceleration and spin evolution for binary systems, which enter at fourth PN order. The calculation is carried out, from first principles, using the effective field theory framework for spinning compact objects, in both the Newton-Wigner and covariant spin supplementary conditions. A nontrivial consistency check is performed on our results by showing that the energy loss induced by the resulting radiation-reaction force is equivalent to the total emitted power in the far zone, up to so-called "Schott terms." We also find that, at this order, the radiation reaction has no net effect on the evolution of the spins. The spin-spin contributions to radiation reaction are reported in a companion paper.

Highly Efficient Spin-Current Operation in a Cu Nano-Ring

Science.gov (United States)

Murphy, Benedict A.; Vick, Andrew J.; Samiepour, Marjan; Hirohata, Atsufumi

2016-11-01

An all-metal lateral spin-valve structure has been fabricated with a medial Copper nano-ring to split the diffusive spin-current path. We have demonstrated significant modulation of the non-local signal by the application of a magnetic field gradient across the nano-ring, which is up to 30% more efficient than the conventional Hanle configuration at room temperature. This was achieved by passing a dc current through a current-carrying bar to provide a locally induced Ampère field. We have shown that in this manner a lateral spin-valve gains an additional functionality in the form of three-terminal gate operation for future spintronic logic.

Spin Hall effect by surface roughness

KAUST Repository

Zhou, Lingjun

2015-01-08

The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.

Automated control of the laser welding process of heart valve scaffolds

Directory of Open Access Journals (Sweden)

Weber Moritz

2016-09-01

Full Text Available Using the electrospinning process the geometry of a heart valve is not replicable by just one manufacturing process. To produce heart valve scaffolds the heart valve leaflets and the vessel have to be produced in separated spinning processes. For the final product of a heart valve they have to be mated afterwards. In this work an already existing three-axes laser was enhanced to laser weld those scaffolds. The automation control software is based on the robot operating system (ROS. The mechatronically control is done by an Arduino Mega. A graphical user interface (GUI is written with Python and Kivy.

Mitral valve prolapse and hyperthyroidism: effect of patient selection.

Science.gov (United States)

Zullo, M A; Devereux, R B; Kramer-Fox, R; Lutas, E M; Brown, W T

1985-11-01

Patients with mitral valve prolapse and hyperthyroidism have common symptoms; the most outstanding symptom is palpitation. To determine whether or not common symptoms contributed to the reported association of these conditions, we evaluated 220 patients with symptomatic mitral valve prolapse and 216 first-degree relatives in 72 families; 65 relatives with mitral valve prolapse and 151 relatives without mitral valve prolapse, all greater than or equal to 16 years of age. Thirty subjects, aged 49 +/- 13 years (p less than 0.025 vs entire study group), had thyroid disease (23 subjects had definite thyroid disease, seven subjects had probable); 27 of 30 subjects with thyroid disease (90%) were female (p less than 0.005). The age- and sex-adjusted prevalence of hyperthyroidism was significantly higher in probands with mitral valve prolapse than in family members without mitral valve prolapse (3.5% vs 0%, p = 0.03), while an intermediate prevalence of hyperthyroidism (2.2%) was observed in family members with mitral valve prolapse. Thus, the prevalence of hyperthyroidism is increased among symptomatic patients with mitral valve prolapse as compared to family members without mitral valve prolapse, but the prevalence of thyroid conditions is similar among family members with or without this condition. These findings are explained by the effect of common symptoms on clinical detection of both mitral valve prolapse and hyperthyroidism.

Extrinsic spin Hall effect in graphene

Science.gov (United States)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

Science.gov (United States)

Zhang, Yue; Yan, Baiqian; Ou-Yang, Jun; Wang, Xianghao; Zhu, Benpeng; Chen, Shi; Yang, Xiaofei

2016-01-01

Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 104 J/m3 and 10 × 104 J/m3, the output performance can be significantly manipulated: The linear range alters from between -330 Oe and 330 Oe to between -650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2-20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance.

Inverse spin Hall effect by spin injection

Science.gov (United States)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

HDR-investigations of check valve closure and resultant water hammer effects

International Nuclear Information System (INIS)

Scholl, K.D.

1983-01-01

The presented investigations are based on the Loss of Coolant Accident (LOCA). They concentrate on the first blowdown phase after pipe break of a feedwater line. The effect of such a break is moderated by quick closing check valves, by which the loss of coolant water is reduced and optimal post accident conditions are obtained. Unfortunately the closure of the valve can cause high pressure peaks (water hammer effects) in the feedwater system which potentially could produce safety relevant secondary damage. The system loading by these effects has been analysed. The HDR-Investigation-results led to an improvement of the feedwater system safety by verifying damping measures of quick closing check valves. Pressure peaks obtained with undamped valves in the range of 300 bars, are reduced to zero or a few bars above the normal operation pressure in feedwater systems. For the analytical simulation of valve closure the following dominant acting forces are identified: the blowdown flow resistance of the valve cone and the damping pistong force. The analytical description and quantification of the forces depends on blowdown flow and valve friction parameters. These have been evaluated and are presented for practical use. (orig.)

Transverse spin effects

International Nuclear Information System (INIS)

Ratcliffe, P.G.

1993-01-01

A discussion is presented of the role that transverse spin physics can play in providing information on the bound state dynamics in hadronic physics. Care is taken to distinguish between single- and double-spin measurements, each being discussed separately. In the case of single-spin effects it is stressed that as yet no satisfactory explanation has been provided within the framework if perturbative QCD which in fact generally predicts negligible effects. In order to clarify the situation experimental data at yet higher p T are necessary and semi-leptonic data could shed some light on the underlying scattering mechanisms. As regards double-spin correlations, the theoretical picture (although clouded by some ill-informed, often erroneous statements and even recent papers) is rather well understood and what is dearly missing is the experimental study of, for example, g 2 in deep-inelastic scattering. (author). 31 refs

Proposal for a graphene-based all-spin logic gate

Science.gov (United States)

Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Zhang, Youguang; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud

2015-02-01

In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (˜μm), higher data throughput, faster computing speed (˜ns), and lower power consumption (˜μA) can be expected from the G-ASLG.

Proposal for a graphene-based all-spin logic gate

International Nuclear Information System (INIS)

Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud; Zhang, Youguang

2015-01-01

In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG

Effects of valve characteristics and pipe diameter on water hammer phenomena

International Nuclear Information System (INIS)

Hur, J.; Kim, T. H.; Mun, B. H.; Choi, H. Y.; Lee, K. W.; Noh, T. S.

2001-01-01

The water hammer phenomena mean that the dynamic loads are induced on the pipe, the pipe support and the equipments in the system due to the sudden change of the flow velocity inside the pipe. The sudden changes are mainly caused by the valve sudden on/off and pump sudden start/trip. To develop a selection criterion of the parts to be analyzed for the water hammer, the effects of the valve characteristics and pipe diameter on the water hammer are analyzed. The analyses using Method of Characteristics (MOC) show that the effects of the valve pressure difference and the valve opening time are very significant, but the effects of the pipe diameter are not dominant

Spin Hall effect and Berry phase of spinning particles

International Nuclear Information System (INIS)

Berard, Alain; Mohrbach, Herve

2006-01-01

We consider the adiabatic evolution of the Dirac equation in order to compute its Berry curvature in momentum space. It is found that the position operator acquires an anomalous contribution due to the non-Abelian Berry gauge connection making the quantum mechanical algebra noncommutative. A generalization to any known spinning particles is possible by using the Bargmann-Wigner equation of motions. The noncommutativity of the coordinates is responsible for the topological spin transport of spinning particles similarly to the spin Hall effect in spintronic physics or the Magnus effect in optics. As an application we predict new dynamics for nonrelativistic particles in an electric field and for photons in a gravitational field

Steam Turbine Control Valve Stiction Effect on Power System Stability

International Nuclear Information System (INIS)

Halimi, B.

2010-01-01

One of the most important problems in power system dynamic stability is low frequency oscillations. This kind of oscillation has significant effects on the stability and security of the power system. In some previous papers, a fact was introduced that a steam pressure continuous fluctuation in turbine steam inlet pipeline may lead to a kind of low frequency oscillation of power systems. Generally, in a power generation plant, steam turbine system composes of some main components, i.e. a boiler or steam generator, stop valves, control valves and turbines that are connected by piping. In the conventional system, the turbine system is composed with a lot of stop and control valves. The steam is provided by a boiler or steam generator. In an abnormal case, the stop valve shuts of the steal flow to the turbine. The steam flow to the turbine is regulated by controlling the control valves. The control valves are provided to regulate the flow of steam to the turbine for starting, increasing or decreasing the power, and also maintaining speed control with the turbine governor system. Unfortunately, the control valve has inherent static friction (stiction) nonlinearity characteristics. Industrial surveys indicated that about 20-30% of all control loops oscillate due to valve problem caused by this nonlinear characteristic. In this paper, steam turbine control valve stiction effect on power system oscillation is presented. To analyze the stiction characteristic effect, firstly a model of control valve and its stiction characteristic are derived by using Newton's laws. A complete tandem steam prime mover, including a speed governing system, a four-stage steam turbine, and a shaft with up to for masses is adopted to analyze the performance of the steam turbine. The governor system consists of some important parts, i.e. a proportional controller, speed relay, control valve with its stiction characteristic, and stem lift position of control valve controller. The steam turbine has

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

2014-02-03

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

International Nuclear Information System (INIS)

Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

2014-01-01

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

Antiferromagnetic spin-orbitronics

KAUST Repository

Manchon, Aurelien; Saidaoui, Hamed Ben Mohamed; Ghosh, Sumit

2015-01-01

Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

Antiferromagnetic spin-orbitronics

KAUST Repository

Manchon, Aurelien

2015-05-01

Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

Thermal imaging of spin Peltier effect

Science.gov (United States)

Daimon, Shunsuke; Iguchi, Ryo; Hioki, Tomosato; Saitoh, Eiji; Uchida, Ken-Ichi

2016-12-01

The Peltier effect modulates the temperature of a junction comprising two different conductors in response to charge currents across the junction, which is used in solid-state heat pumps and temperature controllers in electronics. Recently, in spintronics, a spin counterpart of the Peltier effect was observed. The `spin Peltier effect' modulates the temperature of a magnetic junction in response to spin currents. Here we report thermal imaging of the spin Peltier effect; using active thermography technique, we visualize the temperature modulation induced by spin currents injected into a magnetic insulator from an adjacent metal. The thermal images reveal characteristic distribution of spin-current-induced heat sources, resulting in the temperature change confined only in the vicinity of the metal/insulator interface. This finding allows us to estimate the actual magnitude of the temperature modulation induced by the spin Peltier effect, which is more than one order of magnitude greater than previously believed.

Determining the spin dependent mean free path in Co90Fe10 using giant magnetoresistance

Science.gov (United States)

Shakespear, K. F.; Perdue, K. L.; Moyerman, S. M.; Checkelsky, J. G.; Harberger, S. S.; Tamboli, A. C.; Carey, M. J.; Sparks, P. D.; Eckert, J. C.

2005-05-01

The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a factor of 3 by 350K. For the other structure, it is 7.5±0.5nm at 5K and decreased by a factor of 1.5 by 350K. In both cases, the spin dependent mean free path approaches the typical thickness of ferromagnetic layers in spin valves at room temperature and, thus, has an impact on the choice of design parameters for the development of new spintronic devices.

Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yue; Yan, Baiqian; Ou-Yang, Jun; Zhu, Benpeng; Chen, Shi; Yang, Xiaofei, E-mail: hust-yangxiaofei@163.com [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wang, Xianghao [School of Information Engineering, Wuhan University of Technology, Wuhan 430070 (China)

2016-01-28

Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 10{sup 4 }J/m{sup 3} and 10 × 10{sup 4 }J/m{sup 3}, the output performance can be significantly manipulated: The linear range alters from between −330 Oe and 330 Oe to between −650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2–20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance.

Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

International Nuclear Information System (INIS)

Zhang, Yue; Yan, Baiqian; Ou-Yang, Jun; Zhu, Benpeng; Chen, Shi; Yang, Xiaofei; Wang, Xianghao

2016-01-01

Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 10 4  J/m 3 and 10 × 10 4  J/m 3 , the output performance can be significantly manipulated: The linear range alters from between −330 Oe and 330 Oe to between −650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2–20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance

Realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Ling, Xiaohui [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421002 (China); Yi, Xunong [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Zhou, Xinxing; Liu, Yachao; Shu, Weixing; Wen, Shuangchun [Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Luo, Hailu, E-mail: hailuluo@hnu.edu.cn [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China)

2014-10-13

We report the realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect. By breaking the rotational symmetry of a cylindrical vector beam, the intrinsic vortex phases that the two spin components of the vector beam carries, which is similar to the geometric Pancharatnam-Berry phase, are no longer continuous in the azimuthal direction, and leads to observation of spin accumulation at the opposite edge of the beam. Due to the inherent nature of the phase and independency of light-matter interaction, the observed photonic spin Hall effect is intrinsic. Modulating the topological charge of the vector beam, the spin-dependent splitting can be enhanced and the direction of spin accumulation is switchable. Our findings may provide a possible route for generation and manipulation of spin-polarized photons, and enables spin-based photonics applications.

Electronic heat, charge and spin transport in superconductor-ferromagnetic insulator structures

Energy Technology Data Exchange (ETDEWEB)

Bergeret, Sebastian [Materials Physics Center (CFM-CSIC), San Sebastian (Spain); Donostia International Physics Center (DIPC), San Sebastian (Spain)

2015-07-01

It is known for some time that a superconducting (S) film in contact with a ferromagnetic insulator (FI) exhibits a spin-splitting in the density of states (DoS). Recently we have explored different S-FI hybrid structures and predicted novel effects exploiting such spin-splitting of the DoS. In this talk I will briefly discuss (i) a heat valve based on a FI-S-I-S-FI Josephson junction; (ii) a thermoelectric transistor and (iii) the occurrence of a giant thermophase in a thermally-biased Josephson junction.

The effect of valve strategy on in-cylinder flow and combustion

Energy Technology Data Exchange (ETDEWEB)

Soederberg, F

1997-01-01

This paper examines the effects of different valve strategies and their effect on in-cylinder flow and combustion. A conventional four valve per cylinder otto engine was modified to enable optical access. The flow measurements were made with a two-component laser Doppler velocimetry system. The combustion was monitored by running pressure data from a pressure transducer through a one-zone heat release model. The results show that when the valves operate normally a barrel flow is present and when one valve is closed a swirling flow occurs. No increase in turbulence was found with later phasing, except in the case of very late inlet valve opening and port deactivation. This resulted in a jet with high turbulence, making the combustion fast and stable, even with a very lean mixture ({lambda}=1.8). 6 refs, 44 figs, 4 tabs

Magnetic vortex excitation as spin torque oscillator and its unusual trajectories

Science.gov (United States)

Natarajan, Kanimozhi; Muthuraj, Ponsudana; Rajamani, Amuda; Arumugam, Brinda

2018-05-01

We report an interesting observation of unusual trajectories of vortex core oscillations in a spin valve pillar. Micromagnetic simulation in the composite free layer spin valve nano-pillar shows magnetic vortex excitation under critical current density. When current density is slightly increased and wave vector is properly tuned, for the first time we observe a star like and square gyration. Surprisingly this star like and square gyration also leads to steady, coherent and sustained oscillations. Moreover, the frequency of gyration is also very high for this unusual trajectories. The power spectral analysis reveals that there is a marked increase in output power and frequency with less distortions. Our investigation explores the possibility of these unusual trajectories to exhibit spin torque oscillations.

Spin-motive Force Induced by Domain Wall Dynamics in the Antiferromagnetic Spin Valve

Science.gov (United States)

Sugano, Ryoko; Ichimura, Masahiko; Takahashi, Saburo; Maekawa, Sadamichi; Crest Collaboration

2014-03-01

In spite of no net magnetization in antiferromagnetic (AF) textures, the local magnetic properties (Neel magnetization) can be manipulated in a similar fashion to ferromagnetic (F) ones. It is expected that, even in AF metals, spin transfer torques (STTs) lead to the domain wall (DW) motion and that the DW motion induces spin-motive force (SMF). In order to study the Neel magnetization dynamics and the resultant SMF, we treat the nano-structured F1/AF/F2 junction. The F1 and F2 leads behave as a spin current injector and a detector, respectively. Each F lead is fixed in the different magnetization direction. Torsions (DW in AF) are introduced reflecting the fixed magnetization of two F leads. We simulated the STT-induced Neel magnetization dynamics with the injecting current from F1 to F2 and evaluate induced SMF. Based on the adiabatic electron dynamics in the AF texture, Langevin simulations are performed at finite temperature. This research was supported by JST, CREST, Japan.

The effect of lymphatic valve morphology on fluid transport

Science.gov (United States)

Alexeev, Alexander; Ballard, Matthew; Nepiyushchikh, Zhanna; Dixon, Brandon

2016-11-01

The lymphatic vasculature is present in nearly all invertebrate tissue, and is essential in the transport of fluid and particles such as immune cells, antigens, proteins and lipids from the tissue to lymph nodes and to the venous circulation. Lymphatic vessels are made of up a series of contractile units that work together in harmony as "micro hearts" to pump fluid against a pressure gradient. Lymphatic valves are critical to this functionality, as they open and close with the oscillating pressure gradients from contractions, thus allowing flow in only one direction and leading to a net pumping effect. We use a hybrid lattice-Boltzmann lattice spring model which captures fluid-solid interactions through two-way coupling between a viscous fluid and lymphatic valves in a section of a lymphatic vessel to study the dynamics of lymphatic valves and their effect on fluid transport. Further, we investigate the effect of variations in valve geometry and material properties on fluid pumping. This work helps to increase our understanding of the mechanisms of lymphatic fluid transport, which has implications in a variety of pathologies, including cancer metastasis, autoimmunity, atherosclerosis and obesity. Support from NSF CMMI 1635133 is gratefully acknowledged.

Aortic valve replacement and the stentless Freedom SOLO valve

NARCIS (Netherlands)

Wollersheim, L.W.L.M.

2016-01-01

Aortic valve stenosis has become the most prevalent valvular heart disease in Europe and North America, and is generally caused by age-related calcification of the aortic valve. For most patients, severe symptomatic aortic stenosis needs effective mechanical relief in the form of valve replacement

Controlling the efficiency of spin injection into graphene by carrier drift

NARCIS (Netherlands)

Jozsa, C.; Popinciuc, M.; Tombros, N.; Jonkman, H. T.; van Wees, B. J.

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in

Effect of co-free valve on activity reduction in PWR

International Nuclear Information System (INIS)

Bahn, C.B.; Han, B.C.; Bum, J.S.; Hwang, I.S.; Lee, C.B.

2002-01-01

Radioactive nuclei, such as 68 Co and 60 Co, deposited on out-of-core surfaces in a pressurized water reactor (PWR) primary coolant system, are major sources of occupational radiation exposure to plant maintenance personnel and act as costly impediment to prompt and effective repairs. Valve hardfacing alloys exposed to primary coolant are considered as one of the main Co sources. To evaluate the Co-free valve, such as NOREM 02 and Deloro 50, the candidates for the alternative to Stellite 6, in a simulated PWR primary condition, SNU corrosion test loop (SCOTL) was constructed. For gate valves hard-faced with made of NOREM 02 and Deloro 50 hot cycling tests were conducted for up to 2,000 on-off cycles with cold leak tests at 1,000 cycle interval. It was observed that the leak rate of NOREM 02 (Fe-base) did not satisfy the nuclear grade valve leak criteria. After 1000 cycles test, while there was no leakage in case of Deloro 50 (Ni-base). Also, Deloro 50 showed no leakage after 2000 cycles. To estimate the activity reduction effect, we modified CRUDSIM-MIT which modeled the effects of coolant chemistry on the crud transport and activity buildup in the primary system of PWR. In the new code, crud evaluation and assessment (CREAT), 60 Co activity buildup prediction includes 1) Co-base valve replacement effect, 2) Co-base valve maintenance effect, and 3) control rod drive mechanism (CRDM) and main coolant pump (MCP) shaft contribution. CREAT predicted that the main contributor of Co activity buildup was the corrosion-induced release of Co from the steam generator (SG) tubing. With new SG's tubed with alloy 690, Korean Next Generation Reactor (APR-1400) is expected to have about 64% lower Co activity on SG surface. The use of all Co-free valves is expected to cut additional 8% of activity which is only marginal. (authors)

Quantitative assessment of an aortic and pulmonary valve function according to valve fenestration

International Nuclear Information System (INIS)

Mirkhani, S.H.; Golestani, M.G.; Hosini, M.; Kazemian, A.

1999-01-01

There are some reasons for malfunction of aortic and pulmonary valve like fibrosis, calcification, and atheroma. Although, in some papers fenestration were known as a pathologic sign, but it is not generally accepted, while this matter is important in choosing suitable Homograft Heart Valve. In this paper fenestrations and its size, numbers and situation effect was studied. We collected 98 hearts, the donors died because of accident, we excluded valves with atheroma, calcification, fibrosis and unequal cusps, 91 aortic and 93 pulmonary valves were given further consideration. We classified valves according to situation, number and size of fenestration. Each valve was tested with 104 cm of non-nal saline column pressure which is equal to 76 mm Hg. Valve efficacy was detected by fluid flow assay. With study of 184 valves, 95 had no fenestration, 64 had less than 2 fenestration and 25 had more than 2 fenestration. Valve efficacy in condition of less than 2 fenestration was more than others (p <0.01). Malfunction effects of fenestration increased in larger valve and it will be decreased if their situation would be marginal (free margin of cusp). In the comparison of aortic and pulmonary valve we saw that malfunction effect of fenestration in pulmonary valve was more than aortic valve. Our experience in Immam Khomeini Homograft Valve Bank has shown that a great deal of valves is fenestrated. It seems that fenestration must be considered as a quality criterion in homograft valve preparation, especially in pulmonary and large aortic valves; but complementary studies is necessary

Valve thrombosis following transcatheter aortic valve implantation: a systematic review.

Science.gov (United States)

Córdoba-Soriano, Juan G; Puri, Rishi; Amat-Santos, Ignacio; Ribeiro, Henrique B; Abdul-Jawad Altisent, Omar; del Trigo, María; Paradis, Jean-Michel; Dumont, Eric; Urena, Marina; Rodés-Cabau, Josep

2015-03-01

Despite the rapid global uptake of transcatheter aortic valve implantation, valve trombosis has yet to be systematically evaluated in this field. The aim of this study was to determine the clinical characteristics, diagnostic criteria, and treatment outcomes of patients diagnosed with valve thrombosis following transcatheter aortic valve implantation through a systematic review of published data. Literature published between 2002 and 2012 on valve thrombosis as a complication of transcatheter aortic valve implantation was identified through a systematic electronic search. A total of 11 publications were identified, describing 16 patients (mean age, 80 [5] years, 65% men). All but 1 patient (94%) received a balloon-expandable valve. All patients received dual antiplatelet therapy immediately following the procedure and continued to take either mono- or dual antiplatelet therapy at the time of valve thrombosis diagnosis. Valve thrombosis was diagnosed at a median of 6 months post-procedure, with progressive dyspnea being the most common symptom. A significant increase in transvalvular gradient (from 10 [4] to 40 [12] mmHg) was the most common echocardiographic feature, in addition to leaflet thickening. Thrombus was not directly visualized with echocardiography. Three patients underwent valve explantation, and the remaining received warfarin, which effectively restored the mean transvalvular gradient to baseline within 2 months. Systemic embolism was not a feature of valve thrombosis post-transcatheter aortic valve implantation. Although a rare, yet likely under-reported complication of post-transcatheter aortic valve implantation, progressive dyspnea coupled with an increasing transvalvular gradient on echocardiography within the months following the intervention likely signifies valve thrombosis. While direct thrombus visualization appears difficult, prompt initiation of oral anticoagulation therapy effectively restores baseline valve function. Copyright © 2014

Cost-Effectiveness of Transcatheter Aortic Valve Replacement With a Self-Expanding Prosthesis Versus Surgical Aortic Valve Replacement.

Science.gov (United States)

Reynolds, Matthew R; Lei, Yang; Wang, Kaijun; Chinnakondepalli, Khaja; Vilain, Katherine A; Magnuson, Elizabeth A; Galper, Benjamin Z; Meduri, Christopher U; Arnold, Suzanne V; Baron, Suzanne J; Reardon, Michael J; Adams, David H; Popma, Jeffrey J; Cohen, David J

2016-01-05

Previous studies of the cost-effectiveness of transcatheter aortic valve replacement (TAVR) have been based primarily on a single balloon-expandable system. The goal of this study was to evaluate the cost-effectiveness of TAVR with a self-expanding prosthesis compared with surgical aortic valve replacement (SAVR) for patients with severe aortic stenosis and high surgical risk. We performed a formal economic analysis on the basis of individual, patient-level data from the CoreValve U.S. High Risk Pivotal Trial. Empirical data regarding survival and quality of life over 2 years, and medical resource use and hospital costs through 12 months were used to project life expectancy, quality-adjusted life expectancy, and lifetime medical costs in order to estimate the incremental cost-effectiveness of TAVR versus SAVR from a U.S. Relative to SAVR, TAVR reduced initial length of stay an average of 4.4 days, decreased the need for rehabilitation services at discharge, and resulted in superior 1-month quality of life. Index admission and projected lifetime costs were higher with TAVR than with SAVR (differences $11,260 and $17,849 per patient, respectively), whereas TAVR was projected to provide a lifetime gain of 0.32 quality-adjusted life-years ([QALY]; 0.41 LY) with 3% discounting. Lifetime incremental cost-effectiveness ratios were $55,090 per QALY gained and $43,114 per LY gained. Sensitivity analyses indicated that a reduction in the initial cost of TAVR by ∼$1,650 would lead to an incremental cost-effectiveness ratio <$50,000/QALY gained. In a high-risk clinical trial population, TAVR with a self-expanding prosthesis provided meaningful clinical benefits compared with SAVR, with incremental costs considered acceptable by current U.S. With expected modest reductions in the cost of index TAVR admissions, the value of TAVR compared with SAVR in this patient population would become high. (Safety and Efficacy Study of the Medtronic CoreValve System in the Treatment of

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

Science.gov (United States)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Observation of the Spin Nernst Effect in Platinum

Science.gov (United States)

Goennenwein, Sebastian

Thermoelectric effects - arising from the interplay between thermal and charge transport phenomena - have been extensively studied and are considered well established. Upon taking into account the spin degree of freedom, however, qualitatively new phenomena arise. A prototype example for these so-called magneto-thermoelectric or spin-caloritronic effects is the spin Seebeck effect, in which a thermal gradient drives a pure spin current. In contrast to their thermoelectric counterparts, not all the spin-caloritronic effects predicted from theory have yet been observed in experiment. One of these `missing' phenomena is the spin Nernst effect, in which a thermal gradient gives rise to a transverse pure spin current. We have observed the spin Nernst effect in yttrium iron garnet/platinum (YIG/Pt) thin film bilayers. Upon applying a thermal gradient within the YIG/Pt bilayer plane, a pure spin current flows in the direction orthogonal to the thermal drive. We detect this spin current as a thermopower voltage, generated via magnetization-orientation dependent spin transfer into the adjacent YIG layer. Our data shows that the spin Nernst and the spin Hall effect in in Pt have different sign, but comparable magnitude, in agreement with first-principles calculations. Financial support via Deutsche Forschungsgemeinschaft Priority Programme SPP 1538 Spin-Caloric Transport is gratefully acknowledged.

Energy efficient hybrid computing systems using spin devices

Science.gov (United States)

Sharad, Mrigank

Emerging spin-devices like magnetic tunnel junctions (MTJ's), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ˜20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode' processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ˜100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters.

Period-doubling bifurcation cascade observed in a ferromagnetic nanoparticle under the action of a spin-polarized current

Energy Technology Data Exchange (ETDEWEB)

Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Kushnir, Mykola Ya. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine); Morales-Meza, Mishel [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Sukhov, Alexander [Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06120 Halle (Saale) (Germany); Rusyn, Volodymyr [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine)

2016-04-01

We report on complex magnetization dynamics in a forced spin valve oscillator subjected to a varying magnetic field and a constant spin-polarized current. The transition from periodic to chaotic magnetic motion was illustrated with bifurcation diagrams and Hausdorff dimension – the methods developed for dissipative self-organizing systems. It was shown that bifurcation cascades can be obtained either by tuning the injected spin-polarized current or by changing the magnitude of applied magnetic field. The order–chaos transition in magnetization dynamics can be also directly observed from the hysteresis curves. The resulting complex oscillations are useful for development of spin-valve devices operating in harmonic and chaotic modes.

Modulation of pure spin currents with a ferromagnetic insulator

Science.gov (United States)

Villamor, Estitxu; Isasa, Miren; Vélez, Saül; Bedoya-Pinto, Amilcar; Vavassori, Paolo; Hueso, Luis E.; Bergeret, F. Sebastián; Casanova, Fèlix

2015-01-01

We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y3F e5O12 (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the nonlocal resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the solution of the spin-diffusion equation. These results open a path towards the development of spin logics.

Effects of pressure and temperature on gate valve unwedging

Energy Technology Data Exchange (ETDEWEB)

Damerell, P.S.; Harrison, D.H.; Hayes, P.W.; Simons, J.W.; Walker, T.A.

1996-12-01

The stem thrust required to unwedge a gate valve is influenced by the pressure and temperature when the valve is closed and by the changes in these conditions between closure and opening. {open_quotes}Pressure locking{close_quotes} and {open_quotes}thermal binding{close_quotes} refer to situations where pressure and temperature effects cause the unwedging load to be much higher than normal. A model of these phenomena has been developed. Wedging (closure) is modeled as developing an {open_quotes}interference{close_quotes} between the disk and its seat rings in the valve. The effects of pressure and temperature are analyzed to determine the change in this disk-to-seat {open_quotes}interference{close_quotes}. Flexibilities, of the disk, body, stem and yoke strongly influence the unwedging thrust. Calculations and limited comparisons to data have been performed for a range of valve designs and scenarios. Pressure changes can increase the unwedging load when there is either a uniform pressure decrease, or a situation where the bonnet pressure exceeds the pressures in the adjacent piping. Temperature changes can increase the unwedging load when: (1) valve closure at elevated system temperature produces a delayed stem expansion, (2) a temperature increase after closure produces a bonnet pressure increase, or (3) a temperature change after closure produces an increase in the disk-to-seat {open_quotes}interference{close_quotes} or disk-to-seat friction.

Effects of pressure and temperature on gate valve unwedging

International Nuclear Information System (INIS)

Damerell, P.S.; Harrison, D.H.; Hayes, P.W.; Simons, J.W.; Walker, T.A.

1996-01-01

The stem thrust required to unwedge a gate valve is influenced by the pressure and temperature when the valve is closed and by the changes in these conditions between closure and opening. open-quotes Pressure lockingclose quotes and open-quotes thermal bindingclose quotes refer to situations where pressure and temperature effects cause the unwedging load to be much higher than normal. A model of these phenomena has been developed. Wedging (closure) is modeled as developing an open-quotes interferenceclose quotes between the disk and its seat rings in the valve. The effects of pressure and temperature are analyzed to determine the change in this disk-to-seat open-quotes interferenceclose quotes. Flexibilities, of the disk, body, stem and yoke strongly influence the unwedging thrust. Calculations and limited comparisons to data have been performed for a range of valve designs and scenarios. Pressure changes can increase the unwedging load when there is either a uniform pressure decrease, or a situation where the bonnet pressure exceeds the pressures in the adjacent piping. Temperature changes can increase the unwedging load when: (1) valve closure at elevated system temperature produces a delayed stem expansion, (2) a temperature increase after closure produces a bonnet pressure increase, or (3) a temperature change after closure produces an increase in the disk-to-seat open-quotes interferenceclose quotes or disk-to-seat friction

Shot noise of spin current and spin transfer torque

Science.gov (United States)

Yu, Yunjin; Zhan, Hongxin; Wan, Langhui; Wang, Bin; Wei, Yadong; Sun, Qingfeng; Wang, Jian

2013-04-01

We report the theoretical investigation of the shot noise of the spin current (Sσ) and the spin transfer torque (Sτ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear Sσ - V and Sτ - V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage Nτ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque Nτ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period Nτ(θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters.

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Spin Hall effect transistor

Czech Academy of Sciences Publication Activity Database

Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

2010-01-01

Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

The anchoring effect on the spin transport properties and I-V characteristics of pentacene molecular devices suspended between nickel electrodes.

Science.gov (United States)

Caliskan, S; Laref, A

2014-07-14

Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.

The effect of scintillation in valve auto-oscillators (1961)

International Nuclear Information System (INIS)

Blaquiere, A.

1961-01-01

In a previous article was analysed the possible sources of fluctuations in a valve auto-oscillator having an oscillating circuit connected to the grid. In particular the shot-noise of the valve has been introduced into the theory by including in the grid circuit an imaginary resistance R L as shown in diagram I. We propose to use this model here for studying the effect of the abnormal background noise of the valve in the low frequency domain (scintillation effect) on the normal working of the auto-oscillator. We will thus bridge the gap between the phenomenological theory of M. Buyle-Bodin, which is only valid for the slow constituents of the scintillation noise, and our previous general theory. A delicate point will thus be resolved, in a region of the spectrum having a great importance in hertzian spectrometry. (author) [fr

Bulk magnon spin current theory for the longitudinal spin Seebeck effect

Energy Technology Data Exchange (ETDEWEB)

Rezende, S.M., E-mail: rezende@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Rodríguez-Suárez, R.L. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Facultad de Física, Pontificia Universidad Católica de Chile, Casilla, 306 Santiago (Chile); Cunha, R.O.; López Ortiz, J.C.; Azevedo, A. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil)

2016-02-15

The longitudinal spin Seebeck effect (LSSE) consists in the generation of a spin current parallel to a temperature gradient applied across the thickness of a bilayer made of a ferromagnetic insulator (FMI), such as yttrium iron garnet (YIG), and a metallic layer (ML) with strong spin orbit coupling, such as platinum. The LSSE is usually detected by a DC voltage generated along the ML due to the conversion of the spin current into a charge current perpendicular to the static magnetic field by means of the inverse spin Hall effect. Here we present a model for the LSSE that relies on the bulk magnon spin current created by the temperature gradient across the thickness of the FMI. We show that the spin current pumped into the metallic layer by the magnon accumulation in the FMI provides continuity of the spin current at the FMI/ML interface and is essential for the existence of the LSSE. The results of the theory are in good agreement with experimental LSSE data in YIG/Pt bilayers on the variation of the DC voltage with the sample temperature, with the FMI layer thickness and with the intensity of high magnetic fields. - Highlights: • We present a theory for the longitudinal spin Seebeck effect based on bulk magnons. • The model explains quantitatively the measured voltage in YIG/Pt created by the LSSE. • The model explains quantitatively the temperature dependence of LSSE measured in YIG/Pt. • The model agrees qualitatively with the measured dependence of LSSE with YIG thickness. • The model agrees qualitatively with the measured dependence of LSSE on magnetic field.

Nonequilibrium Spin Dynamics in a Trapped Fermi Gas with Effective Spin-Orbit Interactions

International Nuclear Information System (INIS)

Stanescu, Tudor D.; Zhang Chuanwei; Galitski, Victor

2007-01-01

We consider a trapped atomic system in the presence of spatially varying laser fields. The laser-atom interaction generates a pseudospin degree of freedom (referred to simply as spin) and leads to an effective spin-orbit coupling for the fermions in the trap. Reflections of the fermions from the trap boundaries provide a physical mechanism for effective momentum relaxation and nontrivial spin dynamics due to the emergent spin-orbit coupling. We explicitly consider evolution of an initially spin-polarized Fermi gas in a two-dimensional harmonic trap and derive nonequilibrium behavior of the spin polarization. It shows periodic echoes with a frequency equal to the harmonic trapping frequency. Perturbations, such as an asymmetry of the trap, lead to the suppression of the spin echo amplitudes. We discuss a possible experimental setup to observe spin dynamics and provide numerical estimates of relevant parameters

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien; Lee, K.-J.

2011-01-01

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien

2011-07-13

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Role of motive forces for the spin torque transfer for nano-structures

Science.gov (United States)

Barnes, Stewart

2009-03-01

Despite an announced imminent commercial realization of spin transfer random access memory (SPRAM) the current theory evolved from that of Slonczewski [1,2] does not conserve energy. Barnes and Maekawa [3] have shown, in order correct this defect, forces which originate from the spin rather than the charge of an electron must be accounted for, this leading to the concept of spin-motive-forces (smf) which must appear in Faraday's law and which significantly modifies the theory for spin-valves and domain wall devices [4]. A multi-channel theory in which these smf's redirect the spin currents will be described. In nano-structures it is now well known that the Kondo effect is reflected by conductance peaks. In essence, the spin degrees of freedom are used to enhance conduction. In a system with nano-magnets and a Coulomb blockade [5] the similar spin channels can be the only means of effective conduction. This results in a smf which lasts for minutes and an enormous magneto-resistance [5]. This implies the possibility of ``single electron memory'' in which the magnetic state is switched by a single electron. [4pt] [1] J. C. Slonczewski, Current-Driven Excitation of Magnetic Multilayers J. Magn. Magn. Mater. 159, L1 (1996). [0pt] [2] Y. Tserkovnyak, A. Brataas, G. E. W. Bauer, and B. I. Halperin, Nonlocal magnetization dynamics in ferromagnetic heterostructures, Rev. Mod. Phys. 77, 1375 (2005). [0pt] [3] S. E. Barnes and S. Maekawa, Generalization of Faraday's Law to Include Nonconservative Spin Forces Phys. Rev. Lett. 98, 246601 (2007); S. E. Barnes and S. Maekawa, Currents induced by domain wall motion in thin ferromagnetic wires. arXiv:cond-mat/ 0410021v1 (2004). [0pt] [4] S. E., Barnes, Spin motive forces, measurement, and spin-valves. J. Magn. Magn. Mat. 310, 2035-2037 (2007); S. E. Barnes, J. Ieda. J and S. Maekawa, Magnetic memory and current amplification devices using moving domain walls. Appl. Phys. Lett. 89, 122507 (2006). [0pt] [5] Pham-Nam Hai, Byung-Ho Yu

PREFACE: Spin Electronics

Science.gov (United States)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

Effects of dynamic loading of motor-operated valve actuators

International Nuclear Information System (INIS)

Damerell, P.S.; Daubresse, S.; Wolfe, K.J.; Dogan, T.; Gleeson, J.

1994-01-01

Experience has shown that valves with rising, nonrotating stems that are operated using electro-motor driven actuators can be susceptible to changes in output thrust at a constant torque switch setting as a result of changes in stem load time history. This effect is a concern because tests on these types of valves to verify thrust achieved at torque switch trip are often performed in situ under load conditions different from the required performance conditions. As part of a motor-operated valve research program being carried out by the Electric Power Research Institute, tests of typical electric motor actuators used with nuclear services valves have been performed. The test results show that changes in output thrust with load time history occur o varying degrees on different stem and stem nut combinations. When the effect exists, there is generally an increase in thrust at torque switch trip when load is developed rapidly from low initial loads, compared to when load is developed slowly. The effect is mainly a result of changes in the coefficient of friction at the stem-stem nut interface. The coefficient of friction is temporarily reduced under rapid loading conditions from low initial load, leading to increased thrust. The root cause is hypothesized to be a open-quotes squeeze-filmclose quotes effect, whereby mixed-mode lubrication (hydrodynamic plus boundary) temporarily replaces boundary lubrication. This paper describes the results of tests performed to better understand the phenomenon

Heavy gas valves

Energy Technology Data Exchange (ETDEWEB)

Steier, L [Vereinigte Armaturen Gesellschaft m.b.H., Mannheim (Germany, F.R.)

1979-01-01

Heavy gas valves must comply with special requirements. Apart from absolute safety in operation there are stringent requirements for material, sealing and ease of operation even in the most difficult conditions. Ball valves and single plate pipe gate valves lateral sealing rings have a dual, double sided sealing effect according to the GROVE sealing system. Single plate gate valves with lateral protective plates are suitable preferably for highly contaminated media. Soft sealing gate valves made of cast iron are used for low pressure applications.

Effects of aging and service wear on main steam isolation valves and valve operators

International Nuclear Information System (INIS)

Clark, R.L.

1996-03-01

In recent years main steam isolation valve (MSIV operating problems have resulted in significant operational transients (e.g., spurious reactor trips, steam generator dry out, excessive valve seat leakage), increased cost, and decreased plant availability. A key ingredient to an engineering-oriented reliability improvement effort is a thorough understanding of relevant historical experience. A detailed review of historical failure data available through the Institute of Nuclear Power Operation's Nuclear Plant Reliability Data System has been conducted for several types of MSIVs and valve operators for both boiling-water reactors and pressurized-water reactors. The focus of this review is on MSIV failures modes, actuator failure modes, consequences of failure on plant operations, method of failure detection, and major stressors affecting both valves and valve operators

Coherent spin transport through a 350 micron thick silicon wafer.

Science.gov (United States)

Huang, Biqin; Monsma, Douwe J; Appelbaum, Ian

2007-10-26

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

Effect of the sinus of valsalva on the closing motion of bileaflet prosthetic heart valves.

Science.gov (United States)

Ohta, Y; Kikuta, Y; Shimooka, T; Mitamura, Y; Yuhta, T; Dohi, T

2000-04-01

Conventional bileaflet prosthetic mechanical heart valves close passively with backflow. Naturally, the valve has problems associated with closure, such as backflow, water hammer effect, and fracture of the leaflet. On the other hand, in the case of the natural aortic valve, the vortex flow in the sinus of Valsalva pushes the leaflet to close, and the valve starts the closing motion earlier than the prosthetic valve as the forward flow decelerates. This closing mechanism is thought to decrease backflow at valve closure. In this study, we propose a new bileaflet mechanical valve resembling a drawbridge in shape, and the prototype valve was designed so that the leaflet closes with the help of the vortex flow in the sinus. The test valve was made of aluminum alloy, and its closing motion was compared to that of the CarboMedics (CM) valve. Both valves were driven by a computer controlled hydraulic mock circulator and were photographed at 648 frames/s by a high speed charge-coupled device (CCD) camera. Each frame of the valve motion image was analyzed with a personal computer, and the opening angles were measured. The flow rate was set as 5.0 L/min. The system was pulsed with 70 bpm, and the systolic/diastolic ratio was 0.3. Glycerin water was used as the circulation fluid at room temperature, and polystyrene particles were used to visualize the streamline. The model of the sinus of Valsalva was made of transparent silicone rubber. As a result, high speed video analysis showed that the test valve started the closing motion 41 ms earlier than the CM valve, and streamline analysis showed that the test valve had a closing mechanism similar to the natural one with the effect of vortex flow. The structure of the test valve was thought to be effective for soft closure and could solve problems associated with closure.

Effect of permanent pacemaker on mortality after transcatheter aortic valve replacement

DEFF Research Database (Denmark)

Engborg, Jonathan; Riechel-Sarup, Casper; Gerke, Oke

2017-01-01

OBJECTIVES: Transcatheter aortic valve implantation (TAVI) is an established treatment for high-grade aortic valve stenosis in patients found unfit for open heart surgery. The method may cause cardiac conduction disorders requiring permanent pacemaker (PPM) implantation, and the long-term effect...

Reversible thermo-pneumatic valves on centrifugal microfluidic platforms.

Science.gov (United States)

Aeinehvand, Mohammad Mahdi; Ibrahim, Fatimah; Harun, Sulaiman Wadi; Kazemzadeh, Amin; Rothan, Hussin A; Yusof, Rohana; Madou, Marc

2015-08-21

Centrifugal microfluidic systems utilize a conventional spindle motor to automate parallel biochemical assays on a single microfluidic disk. The integration of complex, sequential microfluidic procedures on these platforms relies on robust valving techniques that allow for the precise control and manipulation of fluid flow. The ability of valves to consistently return to their former conditions after each actuation plays a significant role in the real-time manipulation of fluidic operations. In this paper, we introduce an active valving technique that operates based on the deflection of a latex film with the potential for real-time flow manipulation in a wide range of operational spinning speeds. The reversible thermo-pneumatic valve (RTPV) seals or reopens an inlet when a trapped air volume is heated or cooled, respectively. The RTPV is a gas-impermeable valve composed of an air chamber enclosed by a latex membrane and a specially designed liquid transition chamber that enables the efficient usage of the applied thermal energy. Inputting thermo-pneumatic (TP) energy into the air chamber deflects the membrane into the liquid transition chamber against an inlet, sealing it and thus preventing fluid flow. From this point, a centrifugal pressure higher than the induced TP pressure in the air chamber reopens the fluid pathway. The behaviour of this newly introduced reversible valving system on a microfluidic disk is studied experimentally and theoretically over a range of rotational frequencies from 700 RPM to 2500 RPM. Furthermore, adding a physical component (e.g., a hemispherical rubber element) to induce initial flow resistance shifts the operational range of rotational frequencies of the RTPV to more than 6000 RPM. An analytical solution for the cooling of a heated RTPV on a spinning disk is also presented, which highlights the need for the future development of time-programmable RTPVs. Moreover, the reversibility and gas impermeability of the RTPV in the

Electrical spin injection into high mobility 2D systems.

Science.gov (United States)

Oltscher, M; Ciorga, M; Utz, M; Schuh, D; Bougeard, D; Weiss, D

2014-12-05

We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would require the spin polarization of the injected current to be much larger than 100%, which is unphysical. A strong correlation of the spin signal with contact width and electron mean free path suggests that ballistic transport in the 2D region below ferromagnetic contacts should be taken into account to fully describe the results.

The effect of some hemodynamic factors on the behaviour of the aortic valve

NARCIS (Netherlands)

Steenhoven, van A.A.; Veenstra, P.C.; Reneman, R.S.

1982-01-01

To test the validity of a theoretical model of aortic valve closure, based upon the observations in a two-dimensional analogue, the effect of some hemodynamic factors on aortic valve behaviour was studied in open-chest dogs. Direct cinematography was used to record aortic valve movements. The ECG,

Spin thermoelectric effects in organic single-molecule devices

Energy Technology Data Exchange (ETDEWEB)

Wang, H.L.; Wang, M.X.; Qian, C.; Hong, X.K.; Zhang, D.B.; Liu, Y.S.; Yang, X.F., E-mail: xfyang@cslg.edu.cn

2017-05-25

Highlights: • A stronger spin thermoelectric performance in a polyacetylene device is observed. • For the antiferromagnetic (AFM) ordering, a transport gap is opened. Thus the thermoelectric effects are largely enhanced. - Abstract: The spin thermoelectric performance of a polyacetylene chain bridging two zigzag graphene nanoribbons (ZGNRs) is investigated based on first principles method. Two different edge spin arrangements in ZGNRs are considered. For ferromagnetic (FM) ordering, transmission eigenstates with different spin indices distributed below and above Fermi level are observed, leading directly to a strong spin thermoelectric effect in a wide temperature range. With the edge spins arranged in the antiferromagnetic (AFM) ordering, an obvious transport gap appears in the system, which greatly enhances the thermoelectric effects. The presence of a small spin splitting also induces a spin thermoelectric effect greater than the charge thermoelectric effect in certain temperature range. In general, the single-molecule junction exhibits the potential to be used for the design of perfect thermospin devices.

Lateral spin injection and detection via electrodeposited Fe/GaAs contacts

OpenAIRE

Majumder, Sarmita

2013-01-01

Experimental studies of lateral spin injection and detection through electrodeposited Fe/GaAs tunnel contacts are reported in this thesis. An enhanced spin valve voltage is demonstrated via non-local lateral spin transport measurements compared to their vacuum-deposited counterparts. We have proposed a simple theoretical model to explain this result. Combined with experimental evidence for interfacial oxygen from atom probe tomography, we speculate that the enhancements occur due to a magne...

Shot noise of spin current and spin transfer torque

International Nuclear Information System (INIS)

Yu Yunjin; Zhan Hongxin; Wan Langhui; Wang Bin; Wei Yadong; Sun Qingfeng; Wang Jian

2013-01-01

We report the theoretical investigation of the shot noise of the spin current (S σ ) and the spin transfer torque (S τ ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear S σ − V and S τ − V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage N τ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque N τ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period N τ (θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters. (paper)

FERMILAB: High energy spin effects

Energy Technology Data Exchange (ETDEWEB)

Anon.

1991-03-15

While many physicists would agree that it is important to study interactions of different isospin states (for example comparing proton and neutron data), many of them also accept as normal data averaged or integrated over ordinary spin. However an ongoing programme at Brookhaven studying elastic scattering (where the incoming particles 'bounce' off each other) produced marked spin effects which are not well understood. Our understanding of particle interactions should not be influenced by which observables are easy to measure and which aren't, and until a clear understanding of spin effects emerges, it is important to continue and extend these studies.

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

FAILURE MODE AND EFFECT ANALYSIS (FMEA OF BUTTERFLY VALVE IN OIL AND GAS INDUSTRY

Directory of Open Access Journals (Sweden)

MUHAMMAD AMIRUL BIN YUSOF

2016-04-01

Full Text Available Butterfly valves are mostly used in various industries such as oil and gas plant. This valve operates with rotating motion using pneumatic system. Rotating actuator turns the disc either parallel or perpendicular to the flow. When the valve is fully open, the disc is rotated a quarter turn so that it allows free passage of the fluid and when fully closed, the disc rotated a quarter turns to block the fluid. The primary failure modes for valves are the valve leaks to environment through flanges, seals on the valve body, valve stem packing not properly protected, over tightened packing nuts, the valve cracks and leaks over the seat. To identify the failure of valve Failure Mode and Effects Analysis has been chosen. FMEA is the one of technique to perform failure analysis. It involves reviewing as many components to identify failure modes, and their causes and effects. For each component, the failure modes and their resulting effects on the rest of the system are recorded in a specific FMEA form. Risk priority number, severity, detection, occurrence are the factor determined in this studies. Risk priority number helps to find out the highest hazardous activities which need more attention than the other activity. The highest score of risk priority number in this research is seat. Action plan was proposed to reduce the risk priority number and so that potential failures also will be reduced.

Spin-transport-phenomena in metals, semiconductors, and insulators

Energy Technology Data Exchange (ETDEWEB)

Althammer, Matthias Klaus

2012-07-19

Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

Anisotropic intrinsic spin Hall effect in quantum wires

International Nuclear Information System (INIS)

Cummings, A W; Akis, R; Ferry, D K

2011-01-01

We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [1-bar 10] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications. (paper)

Superconducting spin valves based on epitaxial Fe/V-hybrid thin film heterostructures

Energy Technology Data Exchange (ETDEWEB)

Nowak, Gregor

2010-12-10

This study presents a systematic investigation of the SSV effect in FM/SC/FM and FM/N/FM/SC heterostructures. Before investigating the actual SSV effect, we first pre-analyzed structural, magnetic and superconducting properties of the Fe/V system. In these preliminary studies we demonstrated, that epitaxial Fe/V heterostructures of superior crystalline quality can be grown by DC sputter deposition. With a Fe/V interface thickness of only one monolayer, the chemical separation of the Fe and V layers is extremely sharp. Moreover, the magnetic investigation showed that from thicknesses of two Fe(001) monolayers on the Fe layers in the superlattice possess a magnetic moment. Furthermore, we demonstrated the interlayer exchange coupling as oscillatory function of the V interlayer thickness. The investigations of the superconducting parameters of the Fe/V system revealed a non-monotonic T{sub S} vs. d{sub Fe} dependence in sample series (1). This observation proves the presence of the FM/SC proximity effect. The studies of various heterostructures of the design AFM/FM/SC/FM revealed a strong counteracting influence on the SSV effect, the stray field effect. The sample containing Fe{sub 25}V{sub 75} alloy layers, has the highest ratio of Cooper pair coherence length and superconductor thickness (ξ{sub S})/(d{sub S}), and its superconducting transition temperature is comparable to the sample with Fe{sub 35}V{sub 65} alloy layers. Nevertheless, the SSV effect in sample Fe{sub 25}V{sub 75} with alloy layers is much smaller than in sample with Fe{sub 35}V{sub 65} alloy layers. For a high-performance superconducting spin valve based on a FM1/SC/FM2 heterostructure at least four parameters have to be optimized simultaneously. 1. The magnetic domain size in FM1 and FM2 has to be as large as possible in order to reduce the stray field effect resulting from magnetization components in the FM domain walls perpendicular to the SC layer. 2. When using ferromagnetic alloys as

Method for estimating steam hammer effects on swing-check valves during closure

International Nuclear Information System (INIS)

Uram, E.M.

1976-01-01

Relationships are developed for estimating the disk impact velocity resulting from a free swing closure of swing-check valves in normal flow and for pipe rupture. They derive from a phase-plane solution of the differential equation for the disk motion that accounts for the nature of the valve pressure drop variation due to steam-hammer effects during closure. For closure in normal flow, the method presented has a more correct foundation than that given in reference where a constant, average valve pressure differential based upon the steady-state pressure drop for the total piping system (which has no real relationship to the steam-hammer-induced valve pressure changes during the closure transient) is used in the valve disk motion equation

Spin pumping through a topological insulator probed by x-ray detected ferromagnetic resonance

Science.gov (United States)

Figueroa, A. I.; Baker, A. A.; Collins-McIntyre, L. J.; Hesjedal, T.; van der Laan, G.

2016-02-01

In the field of spintronics, the generation of a pure spin current (without macroscopic charge flow) through spin pumping of a ferromagnetic (FM) layer opens up the perspective of a new generation of dissipation-less devices. Microwave driven ferromagnetic resonance (FMR) can generate a pure spin current that enters adjacent layers, allowing for both magnetization reversal (through spin-transfer torque) and to probe spin coherence in non-magnetic materials. However, standard FMR is unable to probe multilayer dynamics directly, since the measurement averages over the contributions from the whole system. The synchrotron radiation-based technique of x-ray detected FMR (XFMR) offers an elegant solution to this drawback, giving access to element-, site-, and layer-specific dynamical measurements in heterostructures. In this work, we show how XFMR has provided unique information to understand spin pumping and spin transfer torque effects through a topological insulator (TI) layer in a pseudo-spin valve heterostructure. We demonstrate that TIs function as efficient spin sinks, while also allowing a limited dynamic coupling between ferromagnetic layers. These results shed new light on the spin dynamics of this novel class of materials, and suggest future directions for the development of room temperature TI-based spintronics.

Supra-annular valve strategy for an early degenerated transcatheter balloon-expandable heart valve.

Science.gov (United States)

Kamioka, Norihiko; Caughron, Hope; Corrigan, Frank; Block, Peter; Babaliaros, Vasilis

2018-01-23

Currently, there are no recommendations regarding the selection of valve type for a transcatheter heart valve (THV)-in-THV procedure. A supra-annular valve design may be superior in that it results in a larger effective orifice area and may have a lower chance of valve thrombosis after THV-in-THV. In this report, we describe the use of a supra-annular valve strategy for an early degenerated THV. © 2018 Wiley Periodicals, Inc.

Theory of the spin Peltier effect

Science.gov (United States)

Ohnuma, Y.; Matsuo, M.; Maekawa, S.

2017-10-01

A microscopic theory of the spin Peltier effect in a bilayer structure comprising a paramagnetic metal (PM) and a ferromagnetic insulator (FI) based on the nonequilibrium Green's function method is presented. Spin current and heat current driven by temperature gradient and spin accumulation are formulated as functions of spin susceptibilities in the PM and the FI, and are summarized by Onsager's reciprocal relations. By using the current formulas, we estimate heat generation and absorption at the interface driven by the heat-current injection mediated by spins from PM into FI.

Flow effects due to valve and piston motion in an internal combustion engine exhaust port

International Nuclear Information System (INIS)

Semlitsch, Bernhard; Wang, Yue; Mihăescu, Mihai

2015-01-01

Highlights: • Flow regime identification depending on the valve lift during the exhaust stroke. • Analysis of the valve motion effect onto the flow development in the exhaust port. • Physical interpretation of commonly used discharge and flow coefficient formulations. • Illustration of flow effects in junction regions with pulsatile flow. - Abstract: Performance optimization regarding e.g. exhaust valve strategies in an internal combustion engine is often performed based on one-dimensional simulation investigation. Commonly, a discharge coefficient is used to describe the flow behavior in complex geometries, such as the exhaust port. This discharge coefficient for an exhaust port is obtained by laboratory experiments at fixed valve lifts, room temperatures, and low total pressure drops. The present study investigates the consequences of the valve and piston motion onto the energy losses and the discharge coefficient. Therefore, Large Eddy Simulations are performed in a realistic internal combustion geometry using three different modeling strategies, i.e. fixed valve lift and fixed piston, moving piston and fixed valve lift, and moving piston and moving valve, to estimate the energy losses. The differences in the flow field development with the different modeling approaches is delineated and the dynamic effects onto the primary quantities, e.g. discharge coefficient, are quantified. Considering the motion of piston and valves leads to negative total pressure losses during the exhaust cycle, which cannot be observed at fixed valve lifts. Additionally, the induced flow structures develop differently when valve motion is taken into consideration, which leads to a significant disparity of mass flow rates evolving through the two individual valve ports. However, accounting for piston motion and limited valve motion, leads to a minor discharge coefficient alteration of about one to two percent

Topological Material-Based Spin Devices

Science.gov (United States)

Zhang, Minhao; Wang, Xuefeng

Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

Extrinsic spin Nernst effect from first principles.

Science.gov (United States)

Tauber, Katarina; Gradhand, Martin; Fedorov, Dmitry V; Mertig, Ingrid

2012-07-13

We present an ab initio description of the thermal transport phenomenon called the spin Nernst effect. It refers to generation of a spin accumulation or a pure spin current transverse to an applied temperature gradient. This is similar to the intensively studied spin Hall effect described by intrinsic and extrinsic mechanisms due to an applied electric field. Analogously, several contributions are present for the spin Nernst effect. Here we investigate the extrinsic skew scattering mechanism which is dominant in the limit of dilute alloys. Our calculations are based on a fully relativistic Korringa-Kohn-Rostoker method and a solution of the linearized Boltzmann equation. As a first application, we consider a Cu host with Au, Ti, and Bi impurities.

Spin hall effect associated with SU(2) gauge field

Science.gov (United States)

Tao, Y.

2010-01-01

In this paper, we focus on the connection between spin Hall effect and spin force. Here we investigate that the spin force due to spin-orbit coupling, which, in two-dimensional system, is equivalent to forces of Hirsch and Chudnovsky besides constant factors 3 and frac{3}{2} respectively, is a part of classic Anandan force, and that the spin Hall effect is an anomalous Hall effect. Furthermore, we develop the method of AC phase to derive the expression for the spin force, and note that the most basic spin Hall effect indeed originate from the AC phase and is therefore an intrinsic quantum mechanical property of spin. This method differs from approach of Berry phase in the study of anomalous Hall effect , which is the intrinsic property of the perfect crystal. On the other hand, we use an elegant skill to show that the Chudnovsky-Drude model is reasonable. Here we have improved the theoretical values of spin Hall conductivity of Chudnovsky. Compared to the theoretical values of spin Hall conductivity in the Chudnovsky-Drude model, ours are in better agreement with experimentation. Finally, we discuss the relation between spin Hall effect and fractional statistics.

Gasoline New Timing and Flux Adjustable Rotary Valve Design (Hereinafter: Rotary Valve

Directory of Open Access Journals (Sweden)

Du huiqi

2016-01-01

Full Text Available Conventional gasoline engine with an umbrella valve control cylinder intake and exhaust, in order to achieve sealing effect, the valve is driven by the spring force; at the same time, when the cam opens the valve to overcome the spring force acting. Sealing the better, the more power consumed in the engine mechanical losses, the valve mechanism consumes about 30%, which is not a small loss! This article describes a new type of rotary valve is to significantly reduce mechanical losses, so as to achieve energy saving purposes.

Spin Hall effect for anyons

International Nuclear Information System (INIS)

Dhar, S.; Basu, B.; Ghosh, Subir

2007-01-01

We explain the intrinsic spin Hall effect from generic anyon dynamics in the presence of external electromagnetic field. The free anyon is represented as a spinning particle with an underlying non-commutative configuration space. The Berry curvature plays a major role in the analysis

Effect of quantum tunneling on spin Hall magnetoresistance.

Science.gov (United States)

Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

2017-02-22

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

Small valve area index: its influence on early mortality after mitral valve replacement

NARCIS (Netherlands)

Yazdanbakhsh, A. P.; van den Brink, R. B.; Dekker, Egbert; de Mol, B. A.

2000-01-01

OBJECTIVE: To test the hypothesis that mitral valve prosthesis-patient mismatch increases postoperative mortality. METHODS AND RESULTS: The effect of mitral valve prosthesis-patient mismatch on survival in a cohort of consecutive patients after mitral valve replacement with a mechanical prosthesis

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

Science.gov (United States)

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Interplay between interface structure and magnetism in NiFe/Cu/Ni-based pseudo-spin valves

Science.gov (United States)

Loving, Melissa G.; Ambrose, Thomas F.; Ermer, Henry; Miller, Don; Naaman, Ofer

2018-05-01

Magnetic pseudo spin valves (PSVs) with superconducting Nb electrodes, have been leading candidates for an energy-efficient memory solution compatible with cryogenic operation of ultra-low power superconducting logic. Integration of these PSV Josephson junctions in a standard multi-layer Nb process requires growing high-quality thin magnetic films on a thick Nb bottom electrode (i.e. ≥1.5kÅ, to achieve bulk superconducting properties). However, as deposited, 1.5kÅ Nb exhibits a rough surface with a characteristic rice grain morphology, which severely degrades the switching properties of subsequently deposited PSVs. Therefore, in order to achieve coherent switching throughout a PSV, the Nb interface must be modified. Here, we demonstrate that the Nb surface morphology and PSV crystallinity can be altered with the incorporation of separate 50Å Cu or 100Å Al/50Å Cu non-magnetic seed layers, and demonstrate their impact on the magnetic switching of a 15Å Ni80Fe20/50Å Cu/20Å Ni PSV, at both room temperature and at 10 K. Most notably, these results show that the incorporation of an Al seed layer leads to an improved face centered cubic templating through the bulk of the PSV, and ultimately to superior magnetic switching.

Enhanced thermo-spin effects in iron-oxide/metal multilayers

Science.gov (United States)

Ramos, R.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Uchida, K.; Saitoh, E.; Ibarra, M. R.

2018-06-01

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

Crossover between spin swapping and Hall effect in disordered systems

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2015-07-16

We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists of the interchange between the current flow and its spin polarization directions [M. B. Lifshits and M. I. Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation, and spin swapping are treated on equal footing. We demonstrate that spin swapping and spin Hall effect present very different dependencies as a function of the spin-orbit coupling and disorder strengths and confirm that the former exceeds the latter in the parameter range considered. Three setups are proposed for the experimental observation of the spin swapping effect.

Crossover between spin swapping and Hall effect in disordered systems

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Otani, Y.; Manchon, Aurelien

2015-01-01

We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists of the interchange between the current flow and its spin polarization directions [M. B. Lifshits and M. I. Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation, and spin swapping are treated on equal footing. We demonstrate that spin swapping and spin Hall effect present very different dependencies as a function of the spin-orbit coupling and disorder strengths and confirm that the former exceeds the latter in the parameter range considered. Three setups are proposed for the experimental observation of the spin swapping effect.

Electric-field effects in optically generated spin transport

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

Electric-field effects in optically generated spin transport

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2009-05-25

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

Circuit Simulation of All-Spin Logic

KAUST Repository

Alawein, Meshal

2016-05-01

With the aggressive scaling of complementary metal-oxide semiconductor (CMOS) nearing an inevitable physical limit and its well-known power crisis, the quest for an alternative/augmenting technology that surpasses the current semiconductor electronics is needed for further technological progress. Spintronic devices emerge as prime candidates for Beyond CMOS era by utilizing the electron spin as an extra degree of freedom to decrease the power consumption and overcome the velocity limit connected with the charge. By using the nonvolatility nature of magnetization along with its direction to represent a bit of information and then manipulating it by spin-polarized currents, routes are opened for combined memory and logic. This would not have been possible without the recent discoveries in the physics of nanomagnetism such as spin-transfer torque (STT) whereby a spin-polarized current can excite magnetization dynamics through the transfer of spin angular momentum. STT have expanded the available means of switching the magnetization of magnetic layers beyond old classical techniques, promising to fulfill the need for a new generation of dense, fast, and nonvolatile logic and storage devices. All-spin logic (ASL) is among the most promising spintronic logic switches due to its low power consumption, logic-in-memory structure, and operation on pure spin currents. The device is based on a lateral nonlocal spin valve and STT switching. It utilizes two nanomagnets (whereby information is stored) that communicate with pure spin currents through a spin-coherent nonmagnetic channel. By using the well-known spin physics and the recently proposed four-component spin circuit formalism, ASL can be thoroughly studied and simulated. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall

An analysis of valve train behavior considering stiffness effects

International Nuclear Information System (INIS)

Chun, Dong Joon; Lee, Jin Kab

2000-01-01

To maintain the specific volumetric efficiency of a heavy-duty diesel engine, an understanding of the behavior of each part of the valve train system is very important. The stiffness of the valve train system has a strong influence on the behavior of the valve train than value clearance, heat-resistance, or the durability of parts. In this study, a geometrical cam design profile using a finite element model of the valve train system is suggested. The results of the valve behavior according to the change in stiffness is analyzed for further tuning of the valve train system

Maximizing prosthetic valve size with the Top Hat supra-annular aortic valve

DEFF Research Database (Denmark)

Aagaard, Jan; Geha, Alexander S.

2007-01-01

BACKGROUND AND AIM OF THE STUDY: The CarboMedics Top Hat supra-annular aortic valve allows a one-size (and often two-size) increase over the standard intra-annular valve. This advantage should minimize the risk of patient-prosthesis mismatch, where the effective prosthetic valve orifice area....... This study evaluates the authors' clinical experience with Top Hat supra-annular aortic valve size selection, and the technical aspects of implantation. METHODS: Between January 1999 and October 2005, a total of 251 consecutive patients underwent 252 aortic valve replacements with Top Hat supra...... required unplanned coronary bypass, and 30-day mortality was 2.0% (5/251), indicating a good safety profile for the valves implanted in this series. CONCLUSION: The general distribution of implant sizes in the US indicates that cardiac surgeons may be under-sizing the Top Hat supra-annular aortic valve...

Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

International Nuclear Information System (INIS)

Eslami, Leila; Esmaeilzadeh, Mahdi

2014-01-01

Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted

Impact of Disorder on Spin Dependent Transport Phenomena

KAUST Repository

Saidaoui, Hamed

2016-07-03

The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using

Method of effecting fast turbine valving for improvement of power system stability

International Nuclear Information System (INIS)

Park, R.H.

1981-01-01

As a improved way of effecting fast valving of turbines of power system steam-electric generating units for the purpose of improving the stability of power transmission over transmission circuits to which their generators make connection, when stability is threatened by line faults and certain other stability endangering events, the heretofore employed and/or advocated practice of automatically closing intercept valves at fastest available closing speed in response to a fast valving signal, and thereafter automatically fully reopening them in a matter of seconds, is modified by providing to reopen the valves only partially to and thereafter retain them at a preset partially open position. For best results the process of what can be termed sustained partial reopening is so effected as to result in its completion within a fraction of a second following the peak of the first forward swing of the generator rotor. Control valves may be either held open, or automatically fully or partly closed and thereafter fully opened in a preprogrammed manner, or automatically moved to and thereafter held in a partly closed position, by means of a preprogrammed process of repositioning in which the valves may optionally be first fully or partly closed and thereafter partly reopened. Avoidance of discharge of steam through high pressure safety valves can be had with use of suitably controlled power operated valves that discharge steam to the condenser or to atmosphere. Where there is an intermediate pressure turbine that is supplied with superheated steam, use of sustained partial control valve closure, if employed, is supplemented by provision for reduction of rate of heat release within the steam generator in order to protect the reheater from overheating. As a way to restrict increase of reheat pressure of fossil fuel installations, and to minimize increase in the msr (Moisture separator-reheater) pressure of nuclear units, provision is optionally made of normally closed by-pass v

Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers

NARCIS (Netherlands)

Mosendz, O.; Vlaminck, V.; Pearson, J.E.; Fradin, F.Y.; Bauer, G.E.W.; Bader, S.D.; Hoffmann, A.

2010-01-01

Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents in nonmagnetic conductors. Here we study the spin-pumping-induced

High spin-filter efficiency and Seebeck effect through spin-crossover iron–benzene complex

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang; Zhou, Liping, E-mail: zhoulp@suda.edu.cn; Cheng, Jue-Fei; Wen, Zhongqian; Han, Qin; Wang, Xue-Feng [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China)

2016-04-21

Electronic structures and coherent quantum transport properties are explored for spin-crossover molecule iron-benzene Fe(Bz){sub 2} using density functional theory combined with non-equilibrium Green’s function. High- and low-spin states are investigated for two different lead-molecule junctions. It is found that the asymmetrical T-shaped contact junction in the high-spin state behaves as an efficient spin filter while it has a smaller conductivity than that in the low-spin state. Large spin Seebeck effect is also observed in asymmetrical T-shaped junction. Spin-polarized properties are absent in the symmetrical H-shaped junction. These findings strongly suggest that both the electronic and contact configurations play significant roles in molecular devices and metal-benzene complexes are promising materials for spintronics and thermo-spintronics.

The spin-spin effect in the total neutron cross section of polarized neutrons on polarized 165Ho

International Nuclear Information System (INIS)

Fasoli, U.; Galeazzi, G.; Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R.

1978-01-01

The spin-spin effect in the total neutron cross section of polarized neutrons on polarized 165 Ho has been measured in the energy interval 0.4 to 2.5 MeV, in perpendicular geometry. The results are consistent with zero effect. The spin-spin cross section sigmasub(ss) has been theoretically evaluated by a non-adiabatic coupled-channel calculation. From the comparison between the experimental and theoretical results a value Vsub(ss) = 9+-77 keV for the strength of the spin-spin potential has been obtained. Compound-nucleus effects do not seem to be relevant. (Auth.)

Baking Powder Actuated Centrifugo-Pneumatic Valving for Automation of Multi-Step Bioassays

Directory of Open Access Journals (Sweden)

David J. Kinahan

2016-10-01

Full Text Available We report a new flow control method for centrifugal microfluidic systems; CO2 is released from on-board stored baking powder upon contact with an ancillary liquid. The elevated pressure generated drives the sample into a dead-end pneumatic chamber sealed by a dissolvable film (DF. This liquid incursion wets and dissolves the DF, thus opening the valve. The activation pressure of the DF valve can be tuned by the geometry of the channel upstream of the DF membrane. Through pneumatic coupling with properly dimensioned disc architecture, we established serial cascading of valves, even at a constant spin rate. Similarly, we demonstrate sequential actuation of valves by dividing the disc into a number of distinct pneumatic chambers (separated by DF membranes. Opening these DFs, typically through arrival of a liquid to that location on a disc, permits pressurization of these chambers. This barrier-based scheme provides robust and strictly ordered valve actuation, which is demonstrated by the automation of a multi-step/multi-reagent DNA-based hybridization assay.

The effects of spin in gases

International Nuclear Information System (INIS)

Laloee, F.; Freed, J.H.

1988-01-01

Low-density gases, in which atoms are separated by large distances, have long provided an enjoyable playground for physicists. One might suppose the pleasure of the playground would by now have been exhausted by the very simplicity of low-density gases. Recent work by a number of investigators including the author shows that this is not the case low-density gases continue to serve up a rich variety of phenomena as well as counterintuitive surprises. In particular, the macroscopic properties of a gas composed of individual hydrogen or helium atoms can under special circumstances by changed dramatically by quantum-mechanical effects. According to quantum theory, the nucleus of an atom behaves in a way similar to a rotating top, which has angular momentum about its axis of rotation; that is, the nucleus has spin, known more precisely as spin angular momentum. If the atoms of a gas are spin-polarized, so that their nuclei all have their spins pointing in the same direction, the viscosity of the gas can be changed enormously and so can its ability to conduct heat. Quantum-mechanical correlations among the nuclei called spin waves, which up to now had been observed only in certain liquids and solids such as magnets, can also arise. The changes are large enough for one to say the quantum-mechanical effects have caused the gas to take on entirely new properties. In a certain sense it is amazing to think that polarizing the nuclear spins can have any effect on the macroscopic properties of the gas, since the nuclear spins are son weakly coupled to the outside world. Yet the observations are in full agreement with with theory. Moreover, because spin-polarized gases are still fairly simple systems, they can be understood in terms fundamental principles, something that is still not possible to do in the case of liquids and solids

Universal intrinsic spin Hall effect

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Culcer, D.; Sinitsyn, N. A.; Niu, Q.; Jungwirth, Tomáš; MacDonald, A. H.

2004-01-01

Roč. 92, č. 12 (2004), 126603/1-126603/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor quantum wells * spin-orbit interaction * spin Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

Mesoscopic spin Hall effect in semiconductor nanostructures

Science.gov (United States)

Zarbo, Liviu

The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

Tuning spin-polarized transport in organic semiconductors

Science.gov (United States)

Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

Effect of Ahmed valve implantation on late neovascular glaucoma

Directory of Open Access Journals (Sweden)

Ping-An Mao

2013-09-01

Full Text Available AIM: To discuss the effect and safety of Ahmed valve implantation in late neovascular glaucoma. METHODS: The Ahmed glaucoma valve were implanted in 41 eyes(41 caseswith late neovascular glaucoma, the follow-up was 12 months on average, intraocular pressure was recorded at 1 day, 1 week, 1 month, 3, 6, 12 months respectively after operation and compared with that before operation, at the same time, the complications and treatment were analyzed.RESULTS: The mean intraocular pressure before operation, 1 day, 1 week, 1 month, 3, 6, 12 months after operation was 59.83±5.53, 19.27±8.19, 19.69±6.86, 20.67±6.73, 21.05±6.93, 21.49±7.42, 22.14±8.08mmHg, the mean intraocular pressure before operation was higher than that after operation and the difference was obvious in statistics. Major complications included hyphema, low intraocular pressure early postoperation, shallow anterior chamber, obstruction of the tube, the plate wrapped or exposed.CONCLUSION: Ahmed valve implantation is an effective method to treatlate neovascular glaucoma.

A remote control valve

International Nuclear Information System (INIS)

Cachard, Maurice de; Dumont, Maurice.

1976-01-01

This invention concerns a remote control valve for shutting off or distributing a fluid flowing at a high rate and low pressure. Among the different valves at present in use, electric valves are the most recommended for remote control but their reliability is uncertain and they soon become costly when large diameter valves are used. The valve described in this invention does away with this drawback owing to its simplicity and the small number of moving parts, this makes it particularly reliable. It mainly includes: a tubular body fitted with at least one side opening; at least one valve wedge for this opening, coaxial with the body, and mobile; a mobile piston integral with this wedge. Several valves to the specifications of this invention can be fitted in series (a shut-off valve can be used in conjunction with one or more distribution valves). The fitting and maintenance of the valve is very simple owing to its design. It can be fabricated in any material such as metals, alloys, plastics and concrete. The structure of the valve prevents the flowing fluid from coming into contact with the outside environment, thereby making it particularly suitable in the handling of dangerous or corrosive fluids. Finally, the opening and shutting of the valve occurs slowly, thereby doing away with the water hammer effect so frequent in large bore pipes [fr

A microfluidic timer for timed valving and pumping in centrifugal microfluidics.

Science.gov (United States)

Schwemmer, F; Zehnle, S; Mark, D; von Stetten, F; Zengerle, R; Paust, N

2015-03-21

Accurate timing of microfluidic operations is essential for the automation of complex laboratory workflows, in particular for the supply of sample and reagents. Here we present a new unit operation for timed valving and pumping in centrifugal microfluidics. It is based on temporary storage of pneumatic energy and time delayed sudden release of said energy. The timer is loaded at a relatively higher spinning frequency. The countdown is started by reducing to a relatively lower release frequency, at which the timer is released after a pre-defined delay time. We demonstrate timing for 1) the sequential release of 4 liquids at times of 2.7 s ± 0.2 s, 14.0 s ± 0.5 s, 43.4 s ± 1.0 s and 133.8 s ± 2.3 s, 2) timed valving of typical assay reagents (contact angles 36-78°, viscosities 0.9-5.6 mPa s) and 3) on demand valving of liquids from 4 inlet chambers in any user defined sequence controlled by the spinning protocol. The microfluidic timer is compatible to all wetting properties and viscosities of common assay reagents and does neither require assistive equipment, nor coatings. It can be monolithically integrated into a microfluidic test carrier and is compatible to scalable fabrication technologies such as thermoforming or injection molding.

Observation of the Spin Peltier Effect for Magnetic Insulators

NARCIS (Netherlands)

Flipse, J.; Dejene, F.K.; Wagenaar, D.; Bauer, G.E.W.; Ben Youssef, J.; Van Wees, B.J.

2014-01-01

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin

Experimental study on the effect of an artificial cardiac valve on the left ventricular flow

Science.gov (United States)

Wang, JiangSheng; Gao, Qi; Wei, RunJie; Wang, JinJun

2017-09-01

The use of artificial valves to replace diseased human heart valves is currently the main solution to address the malfunctioning of these valves. However, the effect of artificial valves on the ventricular flow still needs to be understood in flow physics. The left ventricular flow downstream of a St. Jude Medical (SJM) bileaflet mechanical heart valve (BMHV), which is a widely implanted mechanical bileaflet valve, is investigated with time-resolved particle image velocimetry in the current work. A tilting-disk valve is installed on the aortic orifice to guarantee unidirectional flow. Several post-processing tools are applied to provide combined analyses of the physics involved in the ventricular flow. The triple jet pattern that is closely related to the characteristics of the bileaflet valve is discussed in detail from both Eulerian and Lagrangian views. The effects of large-scale vortices on the transportation of blood are revealed by the combined analysis of the tracking of Lagrangian coherent structures, the Eulerian monitoring of the shear stresses, and virtual dye visualization. It is found that the utilization of the SJM BMHV complicates the ventricular flow and could reduce the efficiency of blood transportation. In addition, the kinematics of the bileaflets is presented to explore the effects of flow structures on their motion. These combined analyses could elucidate the properties of SJM BMHV. Furthermore, they could provide new insights into the understanding of other complex blood flows.

AREVA's innovative solutions for valve diagnostics and in-situ valve repair

International Nuclear Information System (INIS)

Damies, H.; Breitenberger, U.; Munoz, L.; Kostroun, F.

2012-01-01

Optimized maintenance strategies are a key aspect for safe and undisturbed plant operation. Innovative valve service solutions can support that in an efficient way. The ADAM®/SIPLUG® valve monitoring system allows full online monitoring of valves and actuators with automatic evaluation and assessment. Especially for safety-related and operation-related valves this provides valuable information on components condition to ensure proper function and contribute to optimization of maintenance strategies as well as effective maintenance performance. More than 25 years of experience in various plants worldwide show that application of ADAM®/SIPLUG® valve diagnostics solution leads to increased plant safety and availability. With the innovative AVARIS technology an in-situ valve repair is possible. It has the unique ability to conduct several steps in-situ, to maintain the sealing seat of gate or check valves. By applying AVARIS, the valve is restored in its original state, the system remains unchanged. Thus, all original documents remain valid and applicable. In comparison to previous procedures like cutting valves out of the pipeline and repairing hard facings or damaged seal seats in a separate workshop or alternatively replacement by a new valve body the new AVARIS technology avoids costs, risk and effort. (author)

The effect of spin in swing bowling in cricket: model trajectories for spin alone

Science.gov (United States)

Robinson, Garry; Robinson, Ian

2015-02-01

In ‘swing’ bowling, as employed by fast and fast-medium bowlers in cricket, back-spin along the line of the seam is normally applied in order to keep the seam vertical and to provide stability against ‘wobble’ of the seam. Whilst spin is normally thought of as primarily being the slow bowler's domain, the spin applied by the swing bowler has the side-effect of generating a lift or Magnus force. This force, depending on the orientation of the seam and hence that of the back-spin, can have a side-ways component as well as the expected vertical ‘lift’ component. The effect of the spin itself, in influencing the trajectory of the fast bowler's delivery, is normally not considered, presumably being thought of as negligible. The purpose of this paper is to investigate, using calculated model trajectories, the amount of side-ways movement due to the spin and to see how this predicted movement compares with the total observed side-ways movement. The size of the vertical lift component is also estimated. It is found that, although the spin is an essential part of the successful swing bowler's delivery, the amount of side-ways movement due to the spin itself amounts to a few centimetres or so, and is therefore small, but perhaps not negligible, compared to the total amount of side-ways movement observed. The spin does, however, provide a considerable amount of lift compared to the equivalent delivery bowled without spin, altering the point of pitching by up to 3 m, a very large amount indeed. Thus, for example, bowling a ball with the seam pointing directly down the pitch and not designed to swing side-ways at all, but with the amount of back-spin varied, could provide a very powerful additional weapon in the fast bowler's arsenal. So-called ‘sling bowlers’, who use a very low arm action, can take advantage of spin since effectively they can apply side-spin to the ball, giving rise to a large side-ways movement, ˜ 20{}^\\circ cm or more, which certainly is

Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

Science.gov (United States)

Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo

Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.

Spin-orbit torque induced magnetic vortex polarity reversal utilizing spin-Hall effect

Science.gov (United States)

Li, Cheng; Cai, Li; Liu, Baojun; Yang, Xiaokuo; Cui, Huanqing; Wang, Sen; Wei, Bo

2018-05-01

We propose an effective magnetic vortex polarity reversal scheme that makes use of spin-orbit torque introduced by spin-Hall effect in heavy-metal/ferromagnet multilayers structure, which can result in subnanosecond polarity reversal without endangering the structural stability. Micromagnetic simulations are performed to investigate the spin-Hall effect driven dynamics evolution of magnetic vortex. The mechanism of magnetic vortex polarity reversal is uncovered by a quantitative analysis of exchange energy density, magnetostatic energy density, and their total energy density. The simulation results indicate that the magnetic vortex polarity is reversed through the nucleation-annihilation process of topological vortex-antivortex pair. This scheme is an attractive option for ultra-fast magnetic vortex polarity reversal, which can be used as the guidelines for the choice of polarity reversal scheme in vortex-based random access memory.

Lock-in thermography measurements of the spin Peltier effect in a compensated ferrimagnet and its comparison to the spin Seebeck effect

Science.gov (United States)

Yagmur, A.; Iguchi, R.; Geprägs, S.; Erb, A.; Daimon, S.; Saitoh, E.; Gross, R.; Uchida, K.

2018-05-01

The spin Peltier effect (SPE) in a junction comprising a gadolinium-iron-garnet (GdIG) slab and a Pt film has been investigated around the magnetization compensation temperature of GdIG by means of the lock-in thermography method. When a charge current is applied to the Pt layer, a spin current is generated across the Pt/GdIG interface via the spin Hall effect in Pt. This spin current induces a heat current and a measurable temperature change near the Pt/GdIG interface due to the SPE. The SPE signal in the Pt/GdIG junction shows a sign change around the magnetization compensation temperature, demonstrating the similar temperature dependence of the SPE and the spin Seebeck effect for the Pt/GdIG hybrid system.

Observation of the spin Peltier effect for magnetic insulators.

Science.gov (United States)

Flipse, J; Dejene, F K; Wagenaar, D; Bauer, G E W; Ben Youssef, J; van Wees, B J

2014-07-11

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin current in the Pt into a magnon current in the YIG. Via magnon-phonon interactions the magnetic fluctuations modulate the phonon temperature that is detected by a thermopile close to the interface. By finite-element modeling we verify the reciprocity between the spin Peltier and spin Seebeck effect. The observed strong coupling between thermal magnons and phonons in YIG is attractive for nanoscale cooling techniques.

Template-grown NiFe/Cu/NiFe nanowires for spin transfer devices

DEFF Research Database (Denmark)

Piraux, L.; Renard, K.; Guillemet, R.

2007-01-01

We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena....... The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin...

Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect

International Nuclear Information System (INIS)

Wu, Stephen M.; Hoffman, Jason; Pearson, John E.; Bhattacharya, Anand

2014-01-01

The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe 3 O 4 with the ferromagnetic metal Co 0.2 Fe 0.6 B 0.2 (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe 3 O 4 into CoFeB. It is shown that in a single ferromagnetic metal, the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between the two magnets, it is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. These experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.

Fracturing mechanics before valve-in-valve therapy of small aortic bioprosthetic heart valves.

Science.gov (United States)

Johansen, Peter; Engholt, Henrik; Tang, Mariann; Nybo, Rasmus F; Rasmussen, Per D; Nielsen-Kudsk, Jens Erik

2017-10-13

Patients with degraded bioprosthetic heart valves (BHV) who are not candidates for valve replacement may benefit from transcatheter valve-in-valve (VIV) therapy. However, in smaller-sized surgical BHV the resultant orifice may become too narrow. To overcome this, the valve frame can be fractured by a high-pressure balloon prior to VIV. However, knowledge on fracture pressures and mechanics are prerequisites. The aim of this study was to identify the fracture pressures needed in BHV, and to describe the fracture mechanics. Commonly used BHV of small sizes were mounted on a high-pressure balloon situated in a biplane fluoroscopic system with a high-speed camera. The instant of fracture was captured along with the balloon pressure. The valves were inspected for material protrusion and later dissected for fracture zone investigation and description. The valves with a polymer frame fractured at a lower pressure (8-10 atm) than those with a metal stent (19-26 atm). None of the fractured valves had elements protruding. VIV procedures in small-sized BHV may be performed after prior fracture of the valve frame by high-pressure balloon dilatation. This study provides tentative guidelines for expected balloon sizes and pressures for valve fracturing.

Application of ceramics to the sliding seat of valve bridge; Valve bridge yodobu eno ceramics tekiyo

Energy Technology Data Exchange (ETDEWEB)

Matsui, T; Ono, T [Mitsubishi Motors Corp., Tokyo (Japan)

1997-10-01

For use in the valve train, using an OHV (over head valve) configuration. of a 4 valve diesel engine for trucks and buses; we developed a valve bridge, a component of a valve train, with a ceramic head that is made of silicon nitride(Si3N4) in contact with a rocker arm in order to reduce cost and improve wear resistance for further diesel engine emissions regulations. In order to evaluate the effect of this valve bridge, RIG tests and durability tests on actual engines were carried out. 7 figs., 2 tabs.

Transcatheter valve-in-valve implantation due to severe aortic regurgitation in a degenerated aortic homograft

DEFF Research Database (Denmark)

Olsen, Lene Kjaer; Engstrøm, Thomas; Søndergaard, Lars

2009-01-01

Transcatheter aortic valve implantation (TAVI) in severe aortic stenosis has proven to be a feasible and effective treatment modality for inoperable patients. Until now, neither aortic regurgitation nor degenerated bioprostheses has been an indication for TAVI. However, this article reports...... a successful valve-in-valve implantation of a CoreValve aortic valve prosthesis through the right subclavian artery in a case of severe aortic regurgitation within a degenerated aortic homograft. The case exemplifies the possibilities of expanding the indications for TAVI, as well as other vascular access...

Stent valve implantation in conventional redo aortic valve surgery to prevent patient-prosthesis mismatch.

Science.gov (United States)

Ferrari, Enrico; Franciosi, Giorgio; Clivio, Sara; Faletra, Francesco; Moccetti, Marco; Moccetti, Tiziano; Pedrazzini, Giovanni; Demertzis, Stefanos

2017-03-01

The goal was to show the technical details, feasibility and clinical results of balloon-expandable stent valve implantation in the aortic position during conventional redo open-heart surgery in selected obese patients with a small aortic prosthesis and severe patient-prosthesis mismatch. Two symptomatic overweight patients (body mass index of 31 and 38), each with a small aortic prosthesis (a 4-year-old, 21-mm Hancock II biological valve and a 29-year-old, 23-mm Duromedic mechanical valve), increased transvalvular gradients (59/31 and 74/44 mmHg) and a reduced indexed effective orifice area (0.50 and 0.43 cm 2 /m 2 ) underwent implantation of two 26-mm balloon-expandable Sapien 3 valves during standard on-pump redo valve surgery. Using full re-sternotomy, cardiopulmonary bypass and cardioplegic arrest, the two balloon-expandable stent valves were implanted under direct view using a standard aortotomy, after prosthesis removal and without annulus enlargement. Aortic cross-clamp times were 162 and 126 min; cardiopulmonary bypass times were 178 and 180 min; total surgical times were 360 and 318 min. At discharge, echocardiograms showed transvalvular peak and mean gradients of 13/9 and 23/13 mmHg and indexed effective orifice areas of 0.64 and 1.08 cm 2 /m 2 . The 3-month echocardiographic follow-up showed transvalvular peak and mean gradients of 18/9 and 19/11 mmHg and indexed effective orifice areas of 0.78 cm 2 /m 2 and 0.84 cm 2 /m 2 , with improved symptoms (New York Heart Association class 1). Implantation of a balloon-expandable stent valve during redo aortic valve surgery is feasible in selected cases and prevents patient-prosthesis mismatch in obese patients without need for aortic annulus enlargement. Moreover, in the case of stent valve degeneration, this approach permits additional valve-in-valve procedures with large stent valves and prevents re-redo surgery. © The Author 2016. Published by Oxford University Press on behalf of the

THE RESULTS OF SURGICAL TREATMENT OF TRICUSPID VALVE INFECTIVE ENDOCARDITIS USING VALVE REPAIR AND VALVE REPLACEMENT OPERATIONS

Directory of Open Access Journals (Sweden)

S. A. Kovalev

2015-01-01

Full Text Available Aim. To evaluate in-hospital and long-term results of surgical treatment of patients with infective endocarditis of the tricuspid valve, to compare the effectiveness of valve repair and valve replacement techniques, and to identify risk factors of mortality and reoperations. Materials and methods. 31 surgical patients with tricuspid valve infective endocarditis were evaluated. Patients were divided into 2 groups. In Group 1 (n = 14 repairs of the tricuspid valve were performed, in Group 2 (n = 17 patients had undergone tricuspid valve replacements. Epidemiological, clinical, microbiological and echocardiographic data were studied. Methods of comparative analysis, the Kaplan–Meier method, and Cox risk models were applied. Results. The most common complication of in-hospital stay was atrioventricular block (17.7% of cases in Group 2. In Group 1, this type of complication was not found. Hospital mortality was 7.14% in Group 1, and 0% in Group 2. Long-term results have shown the significant reduction of heart failure in general cohort and in both groups. In Group 1 the severity of heart failure in the long term was less than in Group 2. No significant differences in the severity of tricuspid regurgitation were found between the groups. In 7-year follow up no cases of death were registered in Group 1. Cumulative survival rate in Group 2 within 60 months was 67.3 ± 16.2%. No reoperations were performed in patients from Group 1. In Group 2, the freedom from reoperation within 60 months was 70.9 ± 15.3%. Combined intervention was found as predictor of postoperative mortality. Prosthetic valve endocarditis was identified as risk factor for reoperation. Conclusion. Valve repair and valve replacement techniques of surgical treatment of tricuspid valve endocarditis can provide satisfactory hospital and long-term results. Tricuspid valve repair techniques allowed reducing the incidence of postoperative atrioventricular block. In the long-term, patients

The magnetization dynamics of nano-contact spin-torque vortex oscillators

Science.gov (United States)

Keatley, Paul

The operation of nano-contact (NC) spin-torque vortex oscillators (STVOs) is underpinned by vortex gyration in response to spin-torque delivered by high density current passing through the magnetic layers of a spin valve. Gyration directly beneath the NC yields radio frequency (RF) emission through the giant magnetoresistance (GMR) effect, which can be readily detected electronically. The magnetization dynamics that extend beyond the NC perimeter contribute little to the GMR signal, but are crucial for synchronization of multiple NC-STVOs that share the same spin valve film. In this work time-resolved scanning Kerr microscopy (TRSKM) was used to directly image the extended dynamics of STVOs phase-locked to an injected RF current. In this talk the dynamics of single 250-nm diameter NCs, and a pair of 100-nm diameter NCs, will be presented. In general the Kerr images reveal well-defined localized and far-field dynamics, driven by spin-torque and RF current Oersted fields respectively. The RF frequency, RF Oersted field, direction of an in-plane magnetic field, and equilibrium magnetic state, all influenced the spatial character of the dynamics observed in single NCs. In the pair of NCs, two modes were observed in the RF emission. Kerr images revealed that a vortex was formed beneath each NC and that the mode with enhanced spectral amplitude and line quality appeared to be correlated with two localized regions oscillating with similar amplitude and phase, while a second weaker mode exhibited amplitude and phase differences. This suggests that the RF emission was generated by collective modes of vortex gyration dynamically coupled via magnetization dynamics and dipolar interactions of the shared magnetic layers. Within the constraints of injection locking, this work demonstrates that TRSKM can provide valuable insight into the spatial character and time-evolution of magnetization dynamics generated by NC-STVOs and the conditions that may favor their synchronization

Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes

Science.gov (United States)

Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.

2015-10-01

Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Science.gov (United States)

Seeger, R. L.; Garcia, W. J. S.; Dugato, D. A.; da Silva, R. B.; Harres, A.

2018-04-01

Devices based on spin rectification effects are of great interest for broadband communication applications, since they allow the rectification of radio frequency signals by simple ferromagnetic materials. The phenomenon is enhanced at ferromagnetic resonance condition, which may be attained when an external magnetic field is applied. The necessity of such field, however, hinders technological applications. Exploring spin rectification and spin Hall effects in exchange-biased samples, we were able to rectify radio frequency signals without an external applied magnetic field. Direct voltages of the order of μV were obtained when Ta/NiFe/FeMn/Ta thin films were exposed to microwaves in a shorted microstrip line for a relatively broad frequency range. Connecting the films to a resistive load, we estimated the fraction of the incident radio frequency power converted into usable dc power.

Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Self-consistent treatment of spin and magnetization dynamic effect in spin transfer switching

International Nuclear Information System (INIS)

Guo Jie; Tan, Seng Ghee; Jalil, Mansoor Bin Abdul; Koh, Dax Enshan; Han, Guchang; Meng, Hao

2011-01-01

The effect of itinerant spin moment (m) dynamic in spin transfer switching has been ignored in most previous theoretical studies of the magnetization (M) dynamics. Thus in this paper, we proposed a more refined micromagnetic model of spin transfer switching that takes into account in a self-consistent manner of the coupled m and M dynamics. The numerical results obtained from this model further shed insight on the switching profiles of m and M, both of which show particular sensitivity to parameters such as the anisotropy field, the spin torque field, and the initial deviation between m and M.

Towards sub-200 nm nano-structuring of linear giant magneto-resistive spin valves by a direct focused ion beam milling process

International Nuclear Information System (INIS)

Riedmüller, Benjamin; Huber, Felix; Herr, Ulrich

2014-01-01

In this work, we present a detailed investigation of a focused ion beam (FIB) assisted nano-structuring process for giant magneto-resistive (GMR) spin valve sensors. We have performed a quantitative study of the dependence of the GMR ratio as well as the sensor resistance on the ion dose, which is implanted in the active region of our sensors. These findings are correlated with the decrease of magneto-resistive properties after micro- and nano-structuring by the FIB and reveal the importance of ion damage which limits the applicability of FIB milling to GMR devices in the low μm range. Deposition of a protective layer (50 nm SiO 2 ) on top of the sensor structure before milling leads to a preservation of the magneto-resistive properties after the milling procedure down to sensor dimensions of ∼300 nm. The reduction of the sensor dimensions to the nanometer regime is accompanied by a shift of the GMR curves, and a modification of the saturation behavior. Both effects can be explained by a micromagnetic model including the magnetic interaction of free and pinned layer as well as the effect of the demagnetizing field of the free layer on the sensor behavior. The results demonstrate that the FIB technology can be successfully used to prepare spintronic nanostructures

Relief valve testing study

International Nuclear Information System (INIS)

BROMM, R.D.

2001-01-01

Reclosing pressure-actuated valves, commonly called relief valves, are designed to relieve system pressure once it reaches the set point of the valve. They generally operate either proportional to the differential between their set pressure and the system pressure (gradual lift) or by rapidly opening fully when the set pressure is reached (pop action). A pop action valve allows the maximum fluid flow through the valve when the set pressure is reached. A gradual lift valve allows fluid flow in proportion to how much the system pressure has exceeded the set pressure of the valve (in the case of pressure relief) or has decreased below the set pressure (vacuum relief). These valves are used to protect systems from over and under pressurization. They are used on boilers, pressure vessels, piping systems and vacuum systems to prevent catastrophic failures of these systems, which can happen if they are under or over pressurized beyond the material tolerances. The construction of these valves ranges from extreme precision of less than a psi tolerance and a very short lifetime to extremely robust construction such as those used on historic railroad steam engines that are designed operate many times a day without changing their set pressure when the engines are operating. Relief valves can be designed to be immune to the effects of back pressure or to be vulnerable to it. Which type of valve to use depends upon the design requirements of the system

Photonic spin Hall effect at metasurfaces.

Science.gov (United States)

Yin, Xiaobo; Ye, Ziliang; Rho, Junsuk; Wang, Yuan; Zhang, Xiang

2013-03-22

The spin Hall effect (SHE) of light is very weak because of the extremely small photon momentum and spin-orbit interaction. Here, we report a strong photonic SHE resulting in a measured large splitting of polarized light at metasurfaces. The rapidly varying phase discontinuities along a metasurface, breaking the axial symmetry of the system, enable the direct observation of large transverse motion of circularly polarized light, even at normal incidence. The strong spin-orbit interaction deviates the polarized light from the trajectory prescribed by the ordinary Fermat principle. Such a strong and broadband photonic SHE may provide a route for exploiting the spin and orbit angular momentum of light for information processing and communication.

Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

KAUST Repository

Dolui, Kapildeb; Narayan, Awadhesh; Rungger, Ivan; Sanvito, Stefano

2014-01-01

bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

Check valve

Science.gov (United States)

Upton, H.A.; Garcia, P.

1999-08-24

A check valve for use in a GDCS of a nuclear reactor and having a motor driven disk including a rotatable armature for rotating the check valve disk over its entire range of motion is described. In one embodiment, the check valve includes a valve body having a coolant flow channel extending therethrough. The coolant flow channel includes an inlet end and an outlet end. A valve body seat is located on an inner surface of the valve body. The check valve further includes a disk assembly, sometimes referred to as the motor driven disc, having a counterweight and a disk shaped valve. The disk valve includes a disk base having a seat for seating with the valve body seat. The disk assembly further includes a first hinge pin member which extends at least partially through the disk assembly and is engaged to the disk. The disk valve is rotatable relative to the first hinge pin member. The check valve also includes a motor having a stator frame with a stator bore therein. An armature is rotatably positioned within the stator bore and the armature is coupled to the disk valve to cause the disk valve to rotate about its full range of motion. 5 figs.

Check valve

International Nuclear Information System (INIS)

Upton, H.A.; Garcia, P.

1999-01-01

A check valve for use in a GDCS of a nuclear reactor and having a motor driven disk including a rotatable armature for rotating the check valve disk over its entire range of motion is described. In one embodiment, the check valve includes a valve body having a coolant flow channel extending therethrough. The coolant flow channel includes an inlet end and an outlet end. A valve body seat is located on an inner surface of the valve body. The check valve further includes a disk assembly, sometimes referred to as the motor driven disc, having a counterweight and a disk shaped valve. The disk valve includes a disk base having a seat for seating with the valve body seat. The disk assembly further includes a first hinge pin member which extends at least partially through the disk assembly and is engaged to the disk. The disk valve is rotatable relative to the first hinge pin member. The check valve also includes a motor having a stator frame with a stator bore therein. An armature is rotatably positioned within the stator bore and the armature is coupled to the disk valve to cause the disk valve to rotate about its full range of motion. 5 figs

Use of a valve operation test and evaluation system to enhance valve reliability

International Nuclear Information System (INIS)

Lowry, D.A.

1990-01-01

Power plant owners have emphasized the need for assuring safe, reliable operation of valves. While most valves must simply open or close, the mechanisms involved can be quite complex. Motor operated valves (MOVs) must be properly adjusted to assure operability. Individual operator components determine the performance of the entire MOV. Failure in MOVs could cripple or shut down a unit. Thus, a complete valve program consisting of design reviews, operational testing, and preventive and predictive maintenance activities will enhance an owner's confidence level that his valves win operate as expected. Liberty's Valve Operation Test and Evaluation System (VOTES) accurately measures stein thrust without intruding on valve operation. Since mounting a strain gage to a valve stem is a desirable but impractical way of obtaining precise stem thrust, Liberty developed a method to obtain identical data by placing a strain gage sensor on the valve yoke. VOTES provides information which effectively eliminates costly, unscheduled downtime. This paper presents the results of infield VOTES testing. The system's proven ability to identify and characterize actuator and valve performance is demonstrated. Specific topics of discussion include the ability of VOTES to ease a utility's IE Bulletin 8543 concerns and conclusively diagnose MOV components. Data from static and differential pressure testing are presented. Technical, operational, and financial advantages resulting from VOTES technology are explored in detail

Cavitation guide for control valves

Energy Technology Data Exchange (ETDEWEB)

Tullis, J.P. [Tullis Engineering Consultants, Logan, UT (United States)

1993-04-01

This guide teaches the basic fundamentals of cavitation to provide the reader with an understanding of what causes cavitation, when it occurs, and the potential problems cavitation can cause to a valve and piping system. The document provides guidelines for understanding how to reduce the cavitation and/or select control valves for a cavitating system. The guide provides a method for predicting the cavitation intensity of control valves, and how the effect of cavitation on a system will vary with valve type, valve function, valve size, operating pressure, duration of operation and details of the piping installation. The guide defines six cavitation limits identifying cavitation intensities ranging from inception to the maximum intensity possible. The intensity of the cavitation at each limit Is described, including a brief discussion of how each level of cavitation influences the valve and system. Examples are included to demonstrate how to apply the method, including making both size and pressure scale effects corrections. Methods of controlling cavitation are discussed providing information on various techniques which can be used to design a new system or modify an existing one so it can operate at a desired level of cavitation.

Cavitation guide for control valves

International Nuclear Information System (INIS)

Tullis, J.P.

1993-04-01

This guide teaches the basic fundamentals of cavitation to provide the reader with an understanding of what causes cavitation, when it occurs, and the potential problems cavitation can cause to a valve and piping system. The document provides guidelines for understanding how to reduce the cavitation and/or select control valves for a cavitating system. The guide provides a method for predicting the cavitation intensity of control valves, and how the effect of cavitation on a system will vary with valve type, valve function, valve size, operating pressure, duration of operation and details of the piping installation. The guide defines six cavitation limits identifying cavitation intensities ranging from inception to the maximum intensity possible. The intensity of the cavitation at each limit Is described, including a brief discussion of how each level of cavitation influences the valve and system. Examples are included to demonstrate how to apply the method, including making both size and pressure scale effects corrections. Methods of controlling cavitation are discussed providing information on various techniques which can be used to design a new system or modify an existing one so it can operate at a desired level of cavitation

NRC valve performance test program - check valve testing

International Nuclear Information System (INIS)

Jeanmougin, N.M.

1987-01-01

The Valve Performance Test Program addresses the current requirements for testing of pressure isolation valves (PIVs) in light water reactors. Leak rate monitoring is the current method used by operating commercial power plants to survey the condition of their PIVs. ETEC testing of three check valves (4-inch, 6-inch, and 12-inch nominal diameters) indicates that leak rate testing is not a reliable method for detecting impending valve failure. Acoustic emission monitoring of check valves shows promise as a method of detecting loosened internals damage. Future efforts will focus on evaluation of acoustic emission monitoring as a technique for determining check valve condition. Three gate valves also will be tested to evaluate whether the check valve results are applicable to gate type PIVs

Transcatheter, valve-in-valve transapical aortic and mitral valve implantation, in a high risk patient with aortic and mitral prosthetic valve stenoses

Directory of Open Access Journals (Sweden)

Harish Ramakrishna

2015-01-01

Full Text Available Transcatheter valve implantation continues to grow worldwide and has been used principally for the nonsurgical management of native aortic valvular disease-as a potentially less invasive method of valve replacement in high-risk and inoperable patients with severe aortic valve stenosis. Given the burden of valvular heart disease in the general population and the increasing numbers of patients who have had previous valve operations, we are now seeing a growing number of high-risk patients presenting with prosthetic valve stenosis, who are not potential surgical candidates. For this high-risk subset transcatheter valve delivery may be the only option. Here, we present an inoperable patient with severe, prosthetic valve aortic and mitral stenosis who was successfully treated with a trans catheter based approach, with a valve-in-valve implantation procedure of both aortic and mitral valves.

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling.

Science.gov (United States)

Sun, Dali; van Schooten, Kipp J; Kavand, Marzieh; Malissa, Hans; Zhang, Chuang; Groesbeck, Matthew; Boehme, Christoph; Valy Vardeny, Z

2016-08-01

Exploration of spin currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spintronics applications. Owing to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from π-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the curvature of the molecule's surface. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin currents at room temperature, and paves the way for spin orbitronics in plastic materials.

A modelling study into the effects of variable valve timing on the gas exchange process and performance of a 4-valve DI homogeneous charge compression ignition (HCCI) engine

International Nuclear Information System (INIS)

Mahrous, A-F.M.; Potrzebowski, A.; Wyszynski, M.L.; Xu, H.M.; Tsolakis, A.; Luszcz, P.

2009-01-01

Homogeneous charge compression ignition (HCCI) combustion mode is a relatively new combustion technology that can be achieved by using specially designed cams with reduced lift and duration. The auto-ignition in HCCI engine can be facilitated by adjusting the timing of the exhaust-valve-closing and, to some extent, the timing of the intake-valve-opening so as to capture a proportion of the hot exhaust gases in the engine cylinder during the gas exchange process. The effects of variable valve timing strategy on the gas exchange process and performance of a 4-valve direct injection HCCI engine were computationally investigated using a 1D fluid-dynamic engine cycle simulation code. A non-typical intake valve strategy was examined; whereby the intake valves were assumed to be independently actuated with the same valve-lift profile but at different timings. Using such an intake valves strategy, the obtained results showed that the operating range of the exhaust-valve-timing within which the HCCI combustion can be facilitated and maintained becomes much wider than that of the typical intake-valve-timing case. Also it was found that the engine parameters such as load and volumetric efficiency are significantly modified with the use of the non-typical intake-valve-timing. Additionally, the results demonstrated the potential of the non-typical intake-valve strategy in achieving and maintaining the HCCI combustion at much lower loads within a wide range of valve timings. Minimizing the pumping work penalty, and consequently improving the fuel economy, was shown as an advantage of using the non-typical intake-valve-timing with the timing of the early intake valve coupled with a symmetric degree of exhaust-valve-closing timing

A modelling study into the effects of variable valve timing on the gas exchange process and performance of a 4-valve DI homogeneous charge compression ignition (HCCI) engine

Energy Technology Data Exchange (ETDEWEB)

Mahrous, A-F.M. [School of Mechanical Engineering, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Lecturer at the Department of Mechanical Power Engineering, Faculty of Engineering (Shebin El-Kom), Menoufiya University, Shebin El-Kom (Egypt); Potrzebowski, A.; Wyszynski, M.L.; Xu, H.M.; Tsolakis, A.; Luszcz, P. [School of Mechanical Engineering, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

2009-02-15

Homogeneous charge compression ignition (HCCI) combustion mode is a relatively new combustion technology that can be achieved by using specially designed cams with reduced lift and duration. The auto-ignition in HCCI engine can be facilitated by adjusting the timing of the exhaust-valve-closing and, to some extent, the timing of the intake-valve-opening so as to capture a proportion of the hot exhaust gases in the engine cylinder during the gas exchange process. The effects of variable valve timing strategy on the gas exchange process and performance of a 4-valve direct injection HCCI engine were computationally investigated using a 1D fluid-dynamic engine cycle simulation code. A non-typical intake valve strategy was examined; whereby the intake valves were assumed to be independently actuated with the same valve-lift profile but at different timings. Using such an intake valves strategy, the obtained results showed that the operating range of the exhaust-valve-timing within which the HCCI combustion can be facilitated and maintained becomes much wider than that of the typical intake-valve-timing case. Also it was found that the engine parameters such as load and volumetric efficiency are significantly modified with the use of the non-typical intake-valve-timing. Additionally, the results demonstrated the potential of the non-typical intake-valve strategy in achieving and maintaining the HCCI combustion at much lower loads within a wide range of valve timings. Minimizing the pumping work penalty, and consequently improving the fuel economy, was shown as an advantage of using the non-typical intake-valve-timing with the timing of the early intake valve coupled with a symmetric degree of exhaust-valve-closing timing. (author)

Spin Hall effect on a noncommutative space

International Nuclear Information System (INIS)

Ma Kai; Dulat, Sayipjamal

2011-01-01

We study the spin-orbital interaction and the spin Hall effect of an electron moving on a noncommutative space under the influence of a vector potential A(vector sign). On a noncommutative space, we find that the commutator between the vector potential A(vector sign) and the electric potential V 1 (r(vector sign)) of the lattice induces a new term, which can be treated as an effective electric field, and the spin Hall conductivity obtains some correction. On a noncommutative space, the spin current and spin Hall conductivity have distinct values in different directions, and depend explicitly on the noncommutative parameter. Once this spin Hall conductivity in different directions can be measured experimentally with a high level of accuracy, the data can then be used to impose bounds on the value of the space noncommutativity parameter. We have also defined a new parameter, σ=ρθ (ρ is the electron concentration, θ is the noncommutativity parameter), which can be measured experimentally. Our approach is based on the Foldy-Wouthuysen transformation, which gives a general Hamiltonian of a nonrelativistic electron moving on a noncommutative space.

Helicity formalism and spin effects

International Nuclear Information System (INIS)

Anselmino, M.; Caruso, F.; Piovano, U.

1990-01-01

The helicity formalism and the technique to compute amplitudes for interaction processes involving leptons, quarks, photons and gluons are reviewed. Explicit calculations and examples of exploitation of symmetry properties are shown. The formalism is then applied to the discussion of several hadronic processes and spin effects: the experimental data, when related to the properties of the elementary constituent interactions, show many not understood features. Also the nucleon spin problem is briefly reviewed. (author)

Factors influencing left ventricular outflow tract obstruction following a mitral valve-in-valve or valve-in-ring procedure, part 1.

Science.gov (United States)

Bapat, Vinnie; Pirone, Francesco; Kapetanakis, Stam; Rajani, Ronak; Niederer, Steven

2015-10-01

To determine the factors influencing left ventricular outflow tract (LVOT) area reduction after a mitral valve-in-valve (VIV) or a valve-in-ring (VIR) procedure. Transcatheter heart valves (THVs) are increasingly used in performing a VIV or a VIR procedure in high-risk patients. Although less invasive, a potential complication is LVOT obstruction. However, the factors predisposing to LVOT obstruction are ill defined. To understand the effects of the various factors, the study was carried out in three parts: To understand the effect of VIV and VIR on reduction in LVOT area with special attention to different surgical heart valve (SHV) orientations and depth of THV implant. This was carried out in porcine and cadaver hearts. To quantify aorto-mitral-annular (AMA) angle in 20 patients with or without mitral disease and to derive a static computational model to predict LVOT obstruction. To study the effect of SHV design on LVOT obstruction after VIV. This was carried out as a bench test. LVOT area reduction was similar after VIV irrespective of orientation of the mitral SHV implantation as it pinned open the SHV leaflets. Similar effect was seen after VIR. The degree of LVOT obstruction was partly determined by AMAangle and was inversely proportional. SHV design, ring design, and depth of SPAIEN XT implantation also had effect on LVOT obstruction. A possibility of LVOT obstruction should be considered when performing a VIV and VIR procedure. Type of SHV, flexible ring, less obtuse AMA angle, and depth of SAPIEN XT implant can influence the risk. © 2015 Wiley Periodicals, Inc.

High spin effects in superdense matter

International Nuclear Information System (INIS)

Bowers, R.L.; Gleeson, A.M.; Pedigo, R.D.

1978-04-01

A model of relativistic interacting superdense matter with vector, scalar and symmetric second rank tensor exchange is developed. The Green's functions of the model are solved in the self consistent Hartree approximation. The contributions of the symmetric second rank tensor are emphasized. It is found that these high spin contributions effect the superdense matter at densities just beyond those predicted to occur in neutron star matter or nuclear collisions. The spin-two effects do produce an unusual asymptotic dependence, p = - 1 / 3 epsilon. This effect is examined in a simple model of the early universe

Electrical detection of magnetization dynamics via spin rectification effects

Energy Technology Data Exchange (ETDEWEB)

Harder, Michael, E-mail: michael.harder@umanitoba.ca; Gui, Yongsheng, E-mail: ysgui@physics.umanitoba.ca; Hu, Can-Ming, E-mail: hu@physics.umanitoba.ca

2016-11-23

The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro and nanostructured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook format easy to be used for analysing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

Spin pumping through a topological insulator probed by x-ray detected ferromagnetic resonance

Energy Technology Data Exchange (ETDEWEB)

Figueroa, A.I., E-mail: aifigueg@gmail.com [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Baker, A.A. [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Collins-McIntyre, L.J.; Hesjedal, T. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom)

2016-02-15

In the field of spintronics, the generation of a pure spin current (without macroscopic charge flow) through spin pumping of a ferromagnetic (FM) layer opens up the perspective of a new generation of dissipation-less devices. Microwave driven ferromagnetic resonance (FMR) can generate a pure spin current that enters adjacent layers, allowing for both magnetization reversal (through spin-transfer torque) and to probe spin coherence in non-magnetic materials. However, standard FMR is unable to probe multilayer dynamics directly, since the measurement averages over the contributions from the whole system. The synchrotron radiation-based technique of x-ray detected FMR (XFMR) offers an elegant solution to this drawback, giving access to element-, site-, and layer-specific dynamical measurements in heterostructures. In this work, we show how XFMR has provided unique information to understand spin pumping and spin transfer torque effects through a topological insulator (TI) layer in a pseudo-spin valve heterostructure. We demonstrate that TIs function as efficient spin sinks, while also allowing a limited dynamic coupling between ferromagnetic layers. These results shed new light on the spin dynamics of this novel class of materials, and suggest future directions for the development of room temperature TI-based spintronics. - Highlights: • X-ray detected ferromagnetic resonance is used to study the spin pumping phenomenon. • We show a powerful way to get information of spin transfer between magnetic layers. • We observe spin pumping through a topological insulators at room temperature. • Topological insulators function as efficient spin sinks.

Spin pumping through a topological insulator probed by x-ray detected ferromagnetic resonance

International Nuclear Information System (INIS)

Figueroa, A.I.; Baker, A.A.; Collins-McIntyre, L.J.; Hesjedal, T.; Laan, G. van der

2016-01-01

In the field of spintronics, the generation of a pure spin current (without macroscopic charge flow) through spin pumping of a ferromagnetic (FM) layer opens up the perspective of a new generation of dissipation-less devices. Microwave driven ferromagnetic resonance (FMR) can generate a pure spin current that enters adjacent layers, allowing for both magnetization reversal (through spin-transfer torque) and to probe spin coherence in non-magnetic materials. However, standard FMR is unable to probe multilayer dynamics directly, since the measurement averages over the contributions from the whole system. The synchrotron radiation-based technique of x-ray detected FMR (XFMR) offers an elegant solution to this drawback, giving access to element-, site-, and layer-specific dynamical measurements in heterostructures. In this work, we show how XFMR has provided unique information to understand spin pumping and spin transfer torque effects through a topological insulator (TI) layer in a pseudo-spin valve heterostructure. We demonstrate that TIs function as efficient spin sinks, while also allowing a limited dynamic coupling between ferromagnetic layers. These results shed new light on the spin dynamics of this novel class of materials, and suggest future directions for the development of room temperature TI-based spintronics. - Highlights: • X-ray detected ferromagnetic resonance is used to study the spin pumping phenomenon. • We show a powerful way to get information of spin transfer between magnetic layers. • We observe spin pumping through a topological insulators at room temperature. • Topological insulators function as efficient spin sinks.

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Experimental realization of a silicon spin field-effect transistor

OpenAIRE

Huang, Biqin; Monsma, Douwe J.; Appelbaum, Ian

2007-01-01

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after...

Dynamic load effects on gate valve operability

International Nuclear Information System (INIS)

Steele, R. Jr.; MacDonald, P.E.; Arendts, J.G.

1986-01-01

The Idaho National Engineering Laboratory (INEL) participated in an internationally sponsored seismic research program conducted at the decommissioned Heissdampfreaktor (HDR) located in the Federal Republic of Germany. An existing piping system was modified by installation of an 8-in., naturally aged, motor-operated gate valve from a US nuclear power plant and a piping support system of US design. Six other piping support systems of varying flexibility from stiff to flexible were also installed at various times during the tests. Additional valve loadings included internal hydraulic loads and, during one block of tests, elevated temperature. The operability and integrity of the aged gate valve and the dynamic response of the various piping support system were measured during 25 representative seismic events

Measurement of spin pumping voltage separated from extrinsic microwave effects

International Nuclear Information System (INIS)

Iguchi, Ryo; Saitoh, Eiji

2017-01-01

Conversions between spin and charge currents are core technologies in recent spintronics. In this article, we provide methods for estimating inverse spin Hall effects (ISHEs) induced by using microwave-driven spin pumping (SP) as a spin-current generator. ISHE and SP induce an electromotive force at the ferromagnetic or spin-wave resonance, which offers a valuable electric method of studying spin physics in materials. At the resonance, a microwave for exciting the magnetization dynamics induces an additional electromotive force via rf-current rectification and thermoelectric effects. We discuss methods of separating the signals generated from such extrinsic microwave effects by controlling sample structures and configurations. These methods are helpful in performing accurate measurements on ISHE induced by SP, enabling quantitative studies on the conversion between spin and charge currents on various kinds of materials. (author)

Spin effects in high energy quark-quark scattering

International Nuclear Information System (INIS)

Goloskokov, S.V.; Selyugin, O.V.

1993-01-01

The spin amplitudes in high-energy quark-quark scattering at /t/>1 GeV 2 are analyzed. It is shown that the gluon contributions in the QCDα s 3 order lead to the spin-flip amplitude growing as s. This means the existence of the spin-flip part in pomeron exchange. The resulting T f is about few per cent of the spin-non-flip contribution. The factorization of the large-distance and high-energy effects in the spin-flip amplitude is obtained. 13 refs.; 2 figs.; 1 tab

Spin-polarized transport through single-molecule magnet Mn6 complexes

KAUST Repository

Cremades, Eduard; Pemmaraju, C. D.; Sanvito, Stefano; Ruiz, Eliseo

2013-01-01

The coherent transport properties of a device, constructed by sandwiching a Mn6 single-molecule magnet between two gold surfaces, are studied theoretically by using the non-equilibrium Green's function approach combined with density functional theory. Two spin states of such Mn6 complexes are explored, namely the ferromagnetically coupled configuration of the six MnIII cations, leading to the S = 12 ground state, and the low S = 4 spin state. For voltages up to 1 volt the S = 12 ground state shows a current one order of magnitude larger than that of the S = 4 state. Furthermore this is almost completely spin-polarized, since the Mn6 frontier molecular orbitals for S = 12 belong to the same spin manifold. As such the high-anisotropy Mn6 molecule appears as a promising candidate for implementing, at the single molecular level, both spin-switches and low-temperature spin-valves. © 2013 The Royal Society of Chemistry.

Spin-polarized transport through single-molecule magnet Mn6 complexes

KAUST Repository

Cremades, Eduard

2013-01-01

The coherent transport properties of a device, constructed by sandwiching a Mn6 single-molecule magnet between two gold surfaces, are studied theoretically by using the non-equilibrium Green\\'s function approach combined with density functional theory. Two spin states of such Mn6 complexes are explored, namely the ferromagnetically coupled configuration of the six MnIII cations, leading to the S = 12 ground state, and the low S = 4 spin state. For voltages up to 1 volt the S = 12 ground state shows a current one order of magnitude larger than that of the S = 4 state. Furthermore this is almost completely spin-polarized, since the Mn6 frontier molecular orbitals for S = 12 belong to the same spin manifold. As such the high-anisotropy Mn6 molecule appears as a promising candidate for implementing, at the single molecular level, both spin-switches and low-temperature spin-valves. © 2013 The Royal Society of Chemistry.

Spin-accumulation effect in magnetic nano-bridge

International Nuclear Information System (INIS)

Khvalkovskii, A.V.; Zvezdin, A.A.; Zvezdin, K.A.; Pullini, D.; Perlo, P.

2004-01-01

Large values of magnetoresistance experimentally observed in magnetic nano-contacts and nano-wires are explained in terms of spin accumulation. The investigation of the spin-accumulation effect in magnetic nano-contacts (Phys. Rev. Lett. 82 (1999) 2923) and nano-bridges (JETP Lett. 75 (10) (2002) 613), which are considered to be very promising for various spintronic applications, is presented. The two-dimensional spin-diffusion problem in a magnetic nano-bridge is solved. Dependences of the specific resistance of the domain wall and of the distribution of non-equilibrium spin density on the nano-bridge geometry and the material parameters are obtained

Effect of amusement park rides on programmable shunt valve settings.

Science.gov (United States)

Strahle, Jennifer; Collins, Kelly; Stetler, William R; Smith, Brandon W; Garton, Thomas; Garton, Catherine; Garton, Hugh J L; Maher, Cormac O

2013-01-01

Magnetically programmable shunt valves are susceptible to environmental factors including magnetic fields and accelerative forces. It is unknown if rollercoasters with or without magnetic brakes or linear induction motors (LIMs) are capable of altering the setting of a programmable shunt valve. Two different valve types (type A, n = 10; type B, n = 9) were tested at varying resistance settings in 2 trials on 6 different amusement park rides including 2 rides with LIMs, 2 rides with magnetic brakes, and 2 rides without magnetic technology. The performance level of valve type A and the setting of valve type B changed on rollercoasters with magnets (A = 2.5% [2/80]; B = 5.6% [4/72]) and without magnets (A = 7.5% [3/40]; B = 2.8% [1/36]). Neither valve setting changed when exposed to a Ferris wheel or during ambulation throughout the park. Magnetically programmable valves are susceptible to changes in pressure settings when exposed to amusement park rides with elevated vertical gravitational forces, irrespective of the presence of LIMs or magnetic brakes. © 2013 S. Karger AG, Basel.

Spin-dependent Peltier effect in 3D topological insulators

Science.gov (United States)

Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard

2013-03-01

The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.

Heart valve surgery

Science.gov (United States)

... replacement; Valve repair; Heart valve prosthesis; Mechanical valves; Prosthetic valves ... surgery. Your heart valve has been damaged by infection ( endocarditis ). You have received a new heart valve ...

Spin-dependent electron many-body effects in GaAs

Science.gov (United States)

Nemec, P.; Kerachian, Y.; van Driel, H. M.; Smirl, Arthur L.

2005-12-01

Time- and polarization-resolved differential transmission measurements employing same and oppositely circularly polarized 150fs optical pulses are used to investigate spin characteristics of conduction band electrons in bulk GaAs at 295K . Electrons and holes with densities in the 2×1016cm-3-1018cm-3 range are generated and probed with pulses whose center wavelength is between 865 and 775nm . The transmissivity results can be explained in terms of the spin sensitivity of both phase-space filling and many-body effects (band-gap renormalization and screening of the Coulomb enhancement factor). For excitation and probing at 865nm , just above the band-gap edge, the transmissivity changes mainly reflect spin-dependent phase-space filling which is dominated by the electron Fermi factors. However, for 775nm probing, the influence of many-body effects on the induced transmission change are comparable with those from reduced phase space filling, exposing the spin dependence of the many-body effects. If one does not take account of these spin-dependent effects one can misinterpret both the magnitude and time evolution of the electron spin polarization. For suitable measurements we find that the electron spin relaxation time is 130ps .

Heterostructures for Realizing Magnon-Induced Spin Transfer Torque

Directory of Open Access Journals (Sweden)

P. B. Jayathilaka

2012-01-01

Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.

Spin and magnetization effects in plasmas

International Nuclear Information System (INIS)

Brodin, G; Marklund, M; Zamanian, J; Stefan, M

2011-01-01

Quantum effects in plasmas are of interest for a diverse set of systems, and have thus as a field been revived and attracted a lot of attention from a wide community over the past decade. In models of quantum plasmas, the effects studied mostly are due to the quantum particle dispersion and tunnelling. Such effects can be of importance in dense systems and on short length scales. There are also a number of effects related to spin and statistics. However, up to recently the magnetization effect in plasmas due to the intrinsic electron spin has been largely ignored. The magnetization dynamics of e.g. solids has many important applications, such as components for memory storage, but has also been discussed in more 'proper' plasma environments, such as fusion plasmas. Furthermore, also from a basic science point-of-view the effects of intrinsic spin and gyromagnetic effects are of considerable interest. Here we give a short review of a number of different models for treating magnetization effects in plasmas, with a focus on recent results. In particular, the transition between kinetic models and fluid models is discussed. We also give a number of examples of applications of such theories, as well as an outlook for possible future work.

ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

KAUST Repository

Monteblanco, Elmer

2017-03-14

Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

KAUST Repository

Monteblanco, Elmer; Ortiz Pauyac, Christian; Savero, Williams; RojasSanchez, J. Carlos; Schuhl, A.

2017-01-01

Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

Proposed new test of spin effects in general relativity.

Science.gov (United States)

O'Connell, R F

2004-08-20

The recent discovery of a double-pulsar PSR J0737-3039A/B provides an opportunity of unequivocally observing, for the first time, spin effects in general relativity. Existing efforts involve detection of the precession of the spinning body itself. However, for a close binary system, spin effects on the orbit may also be discernible. Not only do they add to the advance of the periastron (by an amount which is small compared to the conventional contribution) but they also give rise to a precession of the orbit about the spin direction. The measurement of such an effect would also give information on the moment of inertia of pulsars.

Determination of oxidation state of iron in normal and pathologically altered human aortic valves

Energy Technology Data Exchange (ETDEWEB)

Czapla-Masztafiak, J. [Institute of Nuclear Physics PAN, Radzikowskiego 152, 31-342 Kraków (Poland); Lis, G.J.; Gajda, M.; Jasek, E. [Department of Histology, Jagiellonian University Medical College, Kopernika 7, 31-034 Kraków (Poland); Czubek, U. [Department of Coronary Disease, Jagiellonian University Medical College, John Paul II Hospital, Prądnicka 80, 31-202 Kraków (Poland); Bolechała, F. [Department of Forensic Medicine, Jagiellonian University Medical College, Grzegórzecka 16, 31-531 Kraków (Poland); Borca, C. [Swiss Light Source, Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Kwiatek, W.M. [Institute of Nuclear Physics PAN, Radzikowskiego 152, 31-342 Kraków (Poland)

2015-12-01

In order to investigate changes in chemical state of iron in normal and pathologically altered human aortic valves X-ray absorption spectroscopy was applied. Since Fe is suspected to play detrimental role in aortic valve stenosis pathogenesis the oxidation state of this element has been determined. The experimental material consisted of 10 μm sections of valves excised during routine surgery and from autopsies. The experiment was performed at the MicroXAS beamline of the SLS synchrotron facility in Villigen (Switzerland). The Fe K-edge XANES spectra obtained from tissue samples were carefully analyzed and compared with the spectra of reference compounds containing iron in various chemical structures. The analysis of absorption edge position and shape of the spectra revealed that both chemical forms of iron are presented in valve tissue but Fe{sup 3+} is the predominant form. Small shift of the absorption edge toward higher energy in the spectra from stenotic valve samples indicates higher content of the Fe{sup 3+} form in pathological tissue. Such a phenomenon suggests the role of Fenton reaction and reactive oxygen species in the etiology of aortic valve stenosis. The comparison of pre-edge regions of XANES spectra for control and stenotic valve tissue confirmed no differences in local symmetry or spin state of iron in analyzed samples.

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

OpenAIRE

Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.

2009-01-01

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-...

Resonant spin Hall effect in two dimensional electron gas

Science.gov (United States)

Shen, Shun-Qing

2005-03-01

Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

Symbiotic organisms search algorithm for dynamic economic dispatch with valve-point effects

Science.gov (United States)

Sonmez, Yusuf; Kahraman, H. Tolga; Dosoglu, M. Kenan; Guvenc, Ugur; Duman, Serhat

2017-05-01

In this study, symbiotic organisms search (SOS) algorithm is proposed to solve the dynamic economic dispatch with valve-point effects problem, which is one of the most important problems of the modern power system. Some practical constraints like valve-point effects, ramp rate limits and prohibited operating zones have been considered as solutions. Proposed algorithm was tested on five different test cases in 5 units, 10 units and 13 units systems. The obtained results have been compared with other well-known metaheuristic methods reported before. Results show that proposed algorithm has a good convergence and produces better results than other methods.

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

Science.gov (United States)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Peng; Ellsworth, David; Chang, Houchen; Janantha, Praveen; Richardson, Daniel; Phillips, Preston; Vijayasarathy, Tarah; Wu, Mingzhong, E-mail: mwu@lamar.colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Shah, Faisal [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-12-15

Light-induced generation of pure spin currents in a Pt(2.5 nm)/BaFe{sub 12}O{sub 19}(1.2 μm)/sapphire(0.5 mm) structure is reported. The BaFe{sub 12}O{sub 19} film had strong in-plane uniaxial anisotropy and was therefore self-biased. Upon exposure to light, a temperature difference (ΔT) was established across the BaFe{sub 12}O{sub 19} thickness that gave rise to a pure spin current in the Pt via the spin Seebeck effect. Via the inverse spin Hall effect, the spin current produced an electric voltage across one of the Pt lateral dimensions. The voltage varied with time in the same manner as ΔT and flipped its sign when the magnetization in BaFe{sub 12}O{sub 19} was reversed.

Statins for aortic valve stenosis

Directory of Open Access Journals (Sweden)

Luciana Thiago

Full Text Available ABSTRACT BACKGROUND: Aortic valve stenosis is the most common type of valvular heart disease in the USA and Europe. Aortic valve stenosis is considered similar to atherosclerotic disease. Some studies have evaluated statins for aortic valve stenosis. OBJECTIVES: To evaluate the effectiveness and safety of statins in aortic valve stenosis. METHODS: Search methods: We searched the Cochrane Central Register of Controlled Trials (CENTRAL, MEDLINE, Embase, LILACS - IBECS, Web of Science and CINAHL Plus. These databases were searched from their inception to 24 November 2015. We also searched trials in registers for ongoing trials. We used no language restrictions. Selection criteria: Randomized controlled clinical trials (RCTs comparing statins alone or in association with other systemic drugs to reduce cholesterol levels versus placebo or usual care. Data collection and analysis: Primary outcomes were severity of aortic valve stenosis (evaluated by echocardiographic criteria: mean pressure gradient, valve area and aortic jet velocity, freedom from valve replacement and death from cardiovascular cause. Secondary outcomes were hospitalization for any reason, overall mortality, adverse events and patient quality of life. Two review authors independently selected trials for inclusion, extracted data and assessed the risk of bias. The GRADE methodology was employed to assess the quality of result findings and the GRADE profiler (GRADEPRO was used to import data from Review Manager 5.3 to create a 'Summary of findings' table. MAIN RESULTS: We included four RCTs with 2360 participants comparing statins (1185 participants with placebo (1175 participants. We found low-quality evidence for our primary outcome of severity of aortic valve stenosis, evaluated by mean pressure gradient (mean difference (MD -0.54, 95% confidence interval (CI -1.88 to 0.80; participants = 1935; studies = 2, valve area (MD -0.07, 95% CI -0.28 to 0.14; participants = 127; studies = 2

Statins for aortic valve stenosis.

Science.gov (United States)

Thiago, Luciana; Tsuji, Selma Rumiko; Nyong, Jonathan; Puga, Maria Eduarda Dos Santos; Góis, Aécio Flávio Teixeira de; Macedo, Cristiane Rufino; Valente, Orsine; Atallah, Álvaro Nagib

2016-01-01

Aortic valve stenosis is the most common type of valvular heart disease in the USA and Europe. Aortic valve stenosis is considered similar to atherosclerotic disease. Some studies have evaluated statins for aortic valve stenosis. To evaluate the effectiveness and safety of statins in aortic valve stenosis. Search methods: We searched the Cochrane Central Register of Controlled Trials (CENTRAL), MEDLINE, Embase, LILACS - IBECS, Web of Science and CINAHL Plus. These databases were searched from their inception to 24 November 2015. We also searched trials in registers for ongoing trials. We used no language restrictions.Selection criteria: Randomized controlled clinical trials (RCTs) comparing statins alone or in association with other systemic drugs to reduce cholesterol levels versus placebo or usual care. Data collection and analysis: Primary outcomes were severity of aortic valve stenosis (evaluated by echocardiographic criteria: mean pressure gradient, valve area and aortic jet velocity), freedom from valve replacement and death from cardiovascular cause. Secondary outcomes were hospitalization for any reason, overall mortality, adverse events and patient quality of life.Two review authors independently selected trials for inclusion, extracted data and assessed the risk of bias. The GRADE methodology was employed to assess the quality of result findings and the GRADE profiler (GRADEPRO) was used to import data from Review Manager 5.3 to create a 'Summary of findings' table. We included four RCTs with 2360 participants comparing statins (1185 participants) with placebo (1175 participants). We found low-quality evidence for our primary outcome of severity of aortic valve stenosis, evaluated by mean pressure gradient (mean difference (MD) -0.54, 95% confidence interval (CI) -1.88 to 0.80; participants = 1935; studies = 2), valve area (MD -0.07, 95% CI -0.28 to 0.14; participants = 127; studies = 2), and aortic jet velocity (MD -0.06, 95% CI -0.26 to 0

Observation of spin Hall effect in photon tunneling via weak measurements.

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-12-09

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-01-01

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

Multifunctional four-port directional control valve constructed from logic valves

International Nuclear Information System (INIS)

Lisowski, E.; Czyżycki, W.; Rajda, J.

2014-01-01

Highlights: • Directional valve with standard ISO 440-08 has been constructed from logic valves. • Only one innovative valve may replace whole family of the standard valves. • CFD analysis and bench tests of the innovative valve has been carried. • Parameters of the innovative valve are equaling or surpassing the standard ones. • The innovative valve has additional possibilities of pressure and flow control. - Abstract: The paper refers to four-port solenoid pilot operated valves, which are subplate mounted in a hydraulic system in accordance with the ISO 4401 standard. Their widespread use in many machines and devices causes a continuing interest in the development of their design by both the scientific centers and the industry. This paper presents an innovative directional control valve based on the use of logic valves and a methodology followed for the design of it by using Solid Edge CAD and ANSYS/Fluent CFD software. The valve design methodology takes into account the need to seek solutions that minimize flow resistance through the valve. For this purpose, the flow paths are prepared by means of CAD software and pressure-flow curves are determined as a result of CFD analysis. The obtained curves are compared with the curves available in the catalogs of spool type directional control valves. The new solution allows to replace the whole family of spool type four-port directional control valves by one valve built of logic valves. In addition, the innovative directional control valve provides leak-proof shutting the flow paths off and also it can control flow rate and even pressure of working liquid. A prototype of the valve designed by the presented method has been made and tested on the test bench. The results quoted in the paper confirm that the developed logic type directional control valve is able to meet all designed connection configurations, and the obtained pressure-flow curves show very good conformity with the results of CFD analysis

Gate valve performance prediction

International Nuclear Information System (INIS)

Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

1994-01-01

The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

Control Valve

Energy Technology Data Exchange (ETDEWEB)

Moore, Wayne R.

2018-03-20

A control valve includes a first conduit having a first inlet and a first outlet and defining a first passage; a second conduit having a second inlet and a second outlet and defining a second passage, the second conduit extending into the first passage such that the second inlet is located within the first passage; and a valve plate disposed pivotably within the first passage, the valve plate defining a valve plate surface. Pivoting of the valve plate within the first passage varies flow from the first inlet to the first outlet and the valve plate is pivotal between a first position and a second position such that in the first position the valve plate substantially prevents fluid communication between the first passage and the second passage and such that in the second position the valve plate permits fluid communication between the first passage and the second passage.

Widespread spin polarization effects in photoemission from topological insulators

Energy Technology Data Exchange (ETDEWEB)

Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.

2011-06-22

High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

Unique spin-polarized transmission effects in a QD ring structure

Science.gov (United States)

Hedin, Eric; Joe, Yong

2010-10-01

Spintronics is an emerging field in which the spin of the electron is used for switching purposes and to communicate information. In order to obtain spin-polarized electron transmission, the Zeeman effect is employed to produce spin-split energy states in quantum dots which are embedded in the arms of a mesoscopic Aharonov-Bohm (AB) ring heterostructure. The Zeeman splitting of the QD energy levels can be induced by a parallel magnetic field, or by a perpendicular field which also produces AB-effects. The combination of these effects on the transmission resonances of the structure is studied analytically and several parameter regimes are identified which produce a high degree of spin-polarized output. Contour and line plots of the weighted spin polarization as a function of electron energy and magnetic field are presented to visualize the degree of spin-polarization. Taking advantage of these unique parameter regimes shows the potential promise of such devices for producing spin-polarized currents.

Enhancement of the spin Peltier effect in multilayers

Science.gov (United States)

Uchida, K.; Iguchi, R.; Daimon, S.; Ramos, R.; Anadón, A.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Aguirre, M. H.; Ibarra, M. R.; Saitoh, E.

2017-05-01

The spin Peltier effect (SPE), heat-current generation as a result of spin-current injection, has been investigated in alternately stacked Pt/Fe3O4 multilayer films. The temperature modulation induced by the SPE in the [Pt/Fe3O4]×n films was found to be significantly enhanced with increasing the number of Pt/Fe3O4 bilayers n . This SPE enhancement is much greater than that expected for a simple stack of independent Pt/Fe3O4 bilayers. The observed n dependence of the SPE can be explained by introducing spin-current redistribution in the multilayer films in the thickness direction, in a manner similar to the enhancement of the spin Seebeck effect in multilayers.

Intrinsic anharmonic effects on the phonon frequencies and effective spin-spin interactions in a quantum simulator made from trapped ions in a linear Paul trap

Science.gov (United States)

McAneny, M.; Freericks, J. K.

2014-11-01

The Coulomb repulsion between ions in a linear Paul trap gives rise to anharmonic terms in the potential energy when expanded about the equilibrium positions. We examine the effect of these anharmonic terms on the accuracy of a quantum simulator made from trapped ions. To be concrete, we consider a linear chain of Yb171+ ions stabilized close to the zigzag transition. We find that for typical experimental temperatures, frequencies change by no more than a factor of 0.01 % due to the anharmonic couplings. Furthermore, shifts in the effective spin-spin interactions (driven by a spin-dependent optical dipole force) are also, in general, less than 0.01 % for detunings to the blue of the transverse center-of-mass frequency. However, detuning the spin interactions near other frequencies can lead to non-negligible anharmonic contributions to the effective spin-spin interactions. We also examine an odd behavior exhibited by the harmonic spin-spin interactions for a range of intermediate detunings, where nearest-neighbor spins with a larger spatial separation on the ion chain interact more strongly than nearest neighbors with a smaller spatial separation.

The effect of varying degrees of stenosis on the characteristics of turbulent pulsatile flow through heart valves.

Science.gov (United States)

Bluestein, D; Einav, S

1995-08-01

Many problems and complications associated with heart valves are related to the dynamic behavior of the valve and the resultant unsteady flow patterns. An accurate depiction of the spatial and temporal velocity and rms distributions imparts better understanding of flow related valve complications, and may be used as a guideline in valve design. While the generalized correlation between increased turbulence level and the severity of the stenosis is well established, few studies addressed the issue of the intermittent nature of turbulence and its timing in the cardiac cycle, and almost none assessed the effect of a progressive stenosis on the flow characteristics through heart valves. In this experimental work we simulated the type of flow which is present in normal and stenosed valves and conducted a comprehensive investigation of valve hemodynamics, valvular turbulence and morphology under varying degrees of stenosis. The characteristics of valves and stenoses were simulated closely, to achieve the flow conditions that initiate turbulent flow conditions. Laser Doppler anemometry (LDA) measurements were carried out in a pulse duplicator system distal to trileaflet polyurethane prosthetic heart valves, installed at mitral and aortic positions. The effect of the degree of the stenosis was comparatively studied through the structure of the turbulent jets emerging from normal and stenotic heart valves. Maximum turbulence level was achieved during the decelerating phase and correlated to the severity of the stenosis, followed by relaminarization of the flow during the acceleration phase. The intermittent nature of the turbulence emphasized the importance of realizing the timing of the turbulence production and its spatial location for optimizing current valve designs. The plug flow through the normal aortic valve prosthesis was replaced by jet like behavior for a 65% stenosis, with the jet becoming narrower and stronger for a 90% stenosis. The morphology of the velocity

Valley–spin Seebeck effect in heavy group-IV monolayers

International Nuclear Information System (INIS)

Zhai, Xuechao; Wang, Shengdong; Zhang, Yan

2017-01-01

Akin to electron spin, the valley has become another highly valued degree of freedom in modern electronics, specifically after tremendous studies on monolayers of group-IV materials, i.e. graphene, silicene, germanene and stanene. Except for graphene, the other heavy group-IV monolayers have observable intrinsic spin–orbit interactions due to their buckled structures. Distinct from the usual electric or optical control of valley and spin, we here employ a temperature difference to drive electron motion in ferromagnetic heavy group-IV monolayers via designing a caloritronic device locally modulated by an interlayer electric (E z ) field. A unique valley–spin Seebeck (VSS) effect is discovered, with the current contributed only by one (the other) valley and one (the other) spin moving along one (the opposite) direction. This effect is suggested to be detected below the critical temperature about 18 K for silicene, 200 K for germanene and 400 K for stanene, arising from the characteristic valley–spin nondegenerate band structures tuned by the E z field, but cannot be driven in graphene without spin–orbit interaction. Above the critical temperature, the VSS effect is broken by overlarge temperature broadening. Besides the temperature, it is also found that the E z field can drive a transition between the VSS effect and the normal spin Seebeck effect. Further calculations indicate that the VSS effect is robust against many realistic perturbations. Our research represents a conceptually but substantially major step towards the study of the Seebeck effect. These findings provide a platform for encoding information simultaneously by the valley and spin quantum numbers of electrons in future thermal-logic circuits and energy-saving devices. (paper)

Steps toward an all-electric spin valve using side-gated quantum point contacts with lateral spin–orbit coupling

International Nuclear Information System (INIS)

Bhandari, Nikhil; Dutta, Maitreya; Charles, James; Cahay, Marc; Newrock, Richard S; Herbert, Stephen T

2013-01-01

Spin-based electronics or ‘spintronics’ has been a topic of interest for over two decades. Electronic devices based on the manipulation of the electron spin are believed to offer the possibility of very small, non-volatile and ultrafast devices with very low power consumption. Since the proposal of a spin-field-effect transistor (SpinFET) by Datta and Das in 1990, many attempts have been made to achieve spin injection, detection and manipulation in semiconductor materials either by incorporating ferromagnetic materials into device architectures or by using external magnetic fields. This approach has significant design complexities, partly due to the influence of stray magnetic fields on device operation. In addition, magnetic electrodes can have magneto-resistance and spurious Hall voltages that can complicate device performance. To date, there has been no successful report of a working Datta–Das SpinFET. Over the last few years we have investigated an all-electric means of manipulating spins, one that only relies on electric fields and voltages and not on ferromagnetic materials or external magnetic fields. We believe we have found a pathway toward this goal, using in-plane side-gated quantum point contacts (QPCs) that rely on lateral spin–orbit coupling to create spin polarization. In this paper we discuss several aspects of our work, beginning with our finding what we believe is nearly complete spin-polarization in InAs QPCs by purely electrical means, our theoretical work to understand the basic mechanisms leading to that situation (asymmetric lateral confinement, lateral spin–orbit coupling and a strong e–e interaction), and our recent work extending the effort to GaAs and to dual QPC systems where one QPC acts as a polarizer and the other as an analyzer. (review)

Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

International Nuclear Information System (INIS)

Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

2003-01-01

We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

International Nuclear Information System (INIS)

Eslami, L.; Faizabadi, E.

2014-01-01

The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

Cavitation noise from butterfly valves

International Nuclear Information System (INIS)

Rahmeyer, W.J.

1982-01-01

Cavitation in valves can produce levels of intense noise. It is possible to mathematically express a limit for a design level of cavitation noise in terms of the cavitation parameter sigma. Using the cavitation parameter or limit, it is then possible to calculate the flow conditions at which a design level of cavitation noise will occur. However, the intensity of cavitation increases with the upstream pressure and valve size at a constant sigma. Therefore, it is necessary to derive equations to correct or scale the cavitation limit for the effects of different upstream pressures and valve sizes. The following paper discusses and presents experimental data for the caviation noise limit as well as the cavitation limits of incipient, critical, incipient damage, and choking cavitation for butterfly valves. The main emphasis is on the design limit of caviation noise, and a noise level of 85 decibels was selected as the noise limit. Tables of data and scaling exponents are included for applying the design limits for the effects of upstream pressure and valve size. (orig.)

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Performance of balanced bellows safety relief valves

International Nuclear Information System (INIS)

Lai, Y.S.

1992-01-01

By the nature of its design, the set point and lift of a conventional spring loaded safety relief valve are sensitive to back pressure. One way to reduce the adverse effects of the back pressure on the safety relief valve function is to install a balanced bellows in a safety relief valve. The metallic bellows has a rather wide range of manufacturing tolerance which makes the design of the bellows safety relief valve very complicated. The state-of-the-art balanced bellows safety relief valve can only substantially minimize, but cannot totally eliminate the back pressure effects on its set point and relieving capacity. Set point change is a linear function of the back pressure to the set pressure ratio. Depending on the valve design, the set point correction factor can be either greater or smaller than unity. There exists an allowable back pressure and critical back pressure for each safety relief valve. When total back pressure exceeds the R a , the relieving capacity will be reduced mainly resulting from the valve lift being reduced by the back pressure and the capacity reduction factor should be applied in valve sizing. Once the R c is exceeded, the safety relief valve becomes unstable and loses its over pressure protection capability. The capacity reduction factor is a function of system overpressure, but their relationship is non-linear in nature. (orig.)

Mitral Valve Disease

Science.gov (United States)

... for mitral valve replacement—mechanical valves (metal) or biological valves (tissue). The principal advantage of mechanical valves ... small risk of stroke due to blood clotting. Biological valves usually are made from animal tissue. Biological ...

Valve and dash-pot assembly

Science.gov (United States)

Chang, Shih-Chih

1986-01-01

A dash-pot valve comprising a cylinder submerged in the fluid of a housing and having a piston attached to a plunger projecting into the path of closing movement of a pivotal valve member. A vortex chamber in said cylinder is provided with tangentially directed inlets to generate vortex flow upon retraction of said plunger and effect increasing resistance against said piston to progressively retard the closing rate of said valve member toward its seat.

Fragility of the fractional quantum spin Hall effect in quantum gases

International Nuclear Information System (INIS)

Fialko, O; Brand, J; Zülicke, U

2014-01-01

We consider the effect of contact interaction in a prototypical quantum spin Hall system of pseudo-spin-1/2 particles. A strong effective magnetic field with opposite directions for the two spin states restricts two-dimensional particle motion to the lowest Landau level. While interaction between same-spin particles leads to incompressible correlated states at fractional filling factors as known from the fractional quantum Hall effect, these states are destabilized by interactions between opposite spin particles. Exact results for two particles with opposite spin reveal a quasi-continuous spectrum of extended states with a large density of states at low energy. This has implications for the prospects of realizing the fractional quantum spin Hall effect in electronic or ultra-cold atom systems. Numerical diagonalization is used to extend the two-particle results to many bosonic particles and trapped systems. The interplay between an external trapping potential and spin-dependent interactions is shown to open up new possibilities for engineering exotic correlated many-particle states with ultra-cold atoms. (paper)

Simulating realistic implementations of spin field effect transistor

Science.gov (United States)

Gao, Yunfei; Lundstrom, Mark S.; Nikonov, Dmitri E.

2011-04-01

The spin field effect transistor (spinFET), consisting of two ferromagnetic source/drain contacts and a Si channel, is predicted to have outstanding device and circuit performance. We carry out a rigorous numerical simulation of the spinFET based on the nonequilibrium Green's function formalism self-consistently coupled with a Poisson solver to produce the device I-V characteristics. Good agreement with the recent experiments in terms of spin injection, spin transport, and the magnetoresistance ratio (MR) is obtained. We include factors crucial for realistic devices: tunneling through a dielectric barrier, and spin relaxation at the interface and in the channel. Using these simulations, we suggest ways of optimizing the device. We propose that by choosing the right contact material and inserting tunnel oxide barriers between the source/drain and channel to filter different spins, the MR can be restored to ˜2000%, which would be beneficial to the reconfigurable logic circuit application.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.

2017-12-08

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

2017-01-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Thermoelectric effects and spin injection into superconductors with exchange field

Energy Technology Data Exchange (ETDEWEB)

Heikkilae, Tero [Dept. Phys., Univ. Jyvaeskylae (Finland); Silaev, Mihail [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Dept. Theor. Physics, KTH, Stockholm (Sweden); Virtanen, Pauli [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Giazotto, Francesco [NEST CNR-INFM and SNS Pisa (Italy); Ozaeta, Asier; Bergeret, Sebastian [CFM-CSIC and DIPC, San Sebastian (Spain)

2015-07-01

When a thin superconducting film is exposed to a longitudinal magnetic field or is in proximity to a ferromagnet, an exchange field separating the spin bands emerges in it. For low enough exchange fields superconductivity survives, but its response to external driving is strongly modified. In my talk I will show how at linear response such systems exhibit very strong thermoelectric response with an almost ideal efficiency. For strong driving, this effect creates a spin accumulation that can only relax via thermalization, and therefore at low temperatures has a very long range. Therefore our work explains recent observations of the long-range spin accumulation in spin-split superconductors. When injecting spin from injectors with non-collinear magnetization compared to the exchange field, the spins start to rotate around the latter. I will describe how superconductivity modifies this spin Hanle effect so that the resulting nonlocal magnetoresistance depends on the details of spin relaxation, therefore allowing for probing them.

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam

2017-05-11

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam; McNellis, Erik R.; Nielsen, Christian B.; Chen, Hung-Yang; Watanabe, Shun; Tanaka, Hisaaki; McCulloch, Iain; Takimiya, Kazuo; Sinova, Jairo; Sirringhaus, Henning

2017-01-01

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Tight valve

International Nuclear Information System (INIS)

Guedj, F.

1987-01-01

This sealed valve is made with a valve seat, an axial valve with a rod fixed to its upper end, a thick bell surrounding the rod and welded by a thin join on the valve casing, a threated ring screwed onto the upper end of the rod and a magnet or electromagnet rotating the ring outside the bell [fr

Structure and magnetoresistive properties of current-perpendicular-to-plane pseudo-spin valves using polycrystalline Co2Fe-based Heusler alloy films

International Nuclear Information System (INIS)

Nakatani, T.M.; Du, Ye; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

2013-01-01

We report current-perpendicular-to-plane giant magnetoresistance (CPP–GMR) of pseudo-spin valves (PSVs) with polycrystalline Co 2 Fe(Al 0.5 Si 0.5 ) (CFAS) and Co 2 Fe(Ga 0.5 Ge 0.5 ) (CFGG) Heusler alloy films. Strongly [0 1 1] textured polycrystalline Heusler alloy films grew on the Ta/Ru/Ag underlayer. Relatively large CPP–GMR values of ΔRA up to 4 mΩ μm 2 and ΔR/R up to 10% were obtained with 5 nm thick Heusler alloy films and Ag spacer layer by annealing CFAS PSV at 450 °C and CFGG PSV at 350 °C. Transmission electron microscopy revealed a flat and sharp interface between the [0 1 1] textured CFAS layers and the [1 1 1] textured Ag spacer layer. Annealing above an optimal temperature for each PSV led to reductions in MR values as a result of the thickening of the spacer layer induced by the Ag diffusion from the outer Ag layers

Aortic valve bypass

DEFF Research Database (Denmark)

Lund, Jens T; Jensen, Maiken Brit; Arendrup, Henrik

2013-01-01

In aortic valve bypass (AVB) a valve-containing conduit is connecting the apex of the left ventricle to the descending aorta. Candidates are patients with symptomatic aortic valve stenosis rejected for conventional aortic valve replacement (AVR) or transcatheter aortic valve implantation (TAVI). ...

Graphene spin diode: Strain-modulated spin rectification

Energy Technology Data Exchange (ETDEWEB)

Wang, Yunhua; Wang, B., E-mail: stslyl@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn [Sino-French Institute of Nuclear Engineering and Technology, School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Yulan, E-mail: stslyl@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn [School of Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2014-08-04

Strain effects on spin transport in a ferromagnetic/strained/normal graphene junction are explored theoretically. It is shown that the spin-resolved Fermi energy range can be controlled by the armchair direction strain because the strain-induced pseudomagnetic field suppresses the current. The spin rectification effect for the bias reversal occurs because of a combination of ferromagnetic exchange splitting and the broken spatial symmetry of the junction. In addition, the spin rectification performance can be tuned remarkably by manipulation of the strains. In view of this strain-modulated spin rectification effect, we propose that the graphene-based ferromagnetic/strained/normal junction can be used as a tunable spin diode.

AN EXPERIMENTAL INVESTIGATION OF THE EFFECTS OF VARIABLE VALVE TIMING ON THE PERFORMANCE IN SPARK IGNITION ENGINE

Directory of Open Access Journals (Sweden)

Ali AKBAŞ

2001-01-01

Full Text Available In this study, an alternative prototype has been designed and constructed for variable valve timing systems which are used in spark ignition engines. The effects of intake valve timing and lift changing on engine performance have been investigated without changing the opening duration of the valves. A four stroke, single cylinder, spark ignition engine has been used for these experiments.