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Sample records for spin valve magnetoresistive

  1. Enhanced magnetoresistance in graphene spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

    2017-05-01

    Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

  2. Inverse Magnetoresistance in Polymer Spin Valves.

    Science.gov (United States)

    Ding, Shuaishuai; Tian, Yuan; Li, Yang; Mi, Wenbo; Dong, Huanli; Zhang, Xiaotao; Hu, Wenping; Zhu, Daoben

    2017-05-10

    In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical La 2/3 Sr 1/3 MnO 3 (LSMO)/P3HT/AlO x /Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlO x /Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.

  3. Strain effects on anisotropic magnetoresistance in a nanowire spin valve

    Science.gov (United States)

    Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

    2016-11-01

    The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

  4. Magneto-resistive and spin valve heads fundamentals and applications

    CERN Document Server

    Mallinson, John C

    2002-01-01

    This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.Th

  5. Magnetoresistance effect of heat generation in a single-molecular spin-valve

    International Nuclear Information System (INIS)

    Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

    2016-01-01

    Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily. - Highlights: • Spin-valve effect of heat generation happens when Coulomb repulsion in quantum dot is less than phonon frequency. • When Coulomb repulsion is larger than phonon frequency, inverse spin-valve effect appears and is enlarged with bias increasing. • The variation of spin polarization degree can change heat generation effectively. • The heat magnetoresistance can be modulated from heat-resistance to heat-gain by gate voltage easily.

  6. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

    Science.gov (United States)

    Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

    2017-11-27

    A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

  7. Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

    Science.gov (United States)

    Schoonus, J J H M; Lumens, P G E; Wagemans, W; Kohlhepp, J T; Bobbert, P A; Swagten, H J M; Koopmans, B

    2009-10-02

    By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

  8. Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

    Directory of Open Access Journals (Sweden)

    Leilei Xu

    2017-01-01

    Full Text Available Two-dimensional (2D layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR properties of a black phosphorus (BP spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

  9. Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

    Science.gov (United States)

    Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

    We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

  10. The magnetoresistive effect induced by stress in spin-valve structures

    International Nuclear Information System (INIS)

    Li-Jie, Qian; Xiao-Yong, Xu; Jing-Guo, Hu

    2009-01-01

    Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic (FM) monolayer and an FM/antiferromagnetic (AFM) bilayer under a stress field, respectively. It then investigates the magnetoresistance (MR) of the spin-valve structure, which is built by an FM monolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling (FM coupling or AFM coupling) between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally

  11. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Directory of Open Access Journals (Sweden)

    Robert Göckeritz

    2016-04-01

    Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  12. A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-09-01

    Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

  13. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  14. Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

    Science.gov (United States)

    Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo

    Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.

  15. Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

    International Nuclear Information System (INIS)

    Huong Giang, D.T.; Thuc, V.N.; Duc, N.H.

    2012-01-01

    Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni 80 Fe 20 /Cu/Fe 50 Co 50 /IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices. - Highlights: ► Investigate electric field-induced magnetic anisotropy in spin-valve/piezoelectric. ► Magnetization, magnetoresistance changes under electric field across piezoelectric. ► Magnetization in magnetostrictive FeCo-layer rotates under a compressive stress. ► This advance shows great implications for low-power electronics and spintronics.

  16. Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling

    NARCIS (Netherlands)

    Schoonus, J.J.H.M.; Lumens, P.G.E.; Wagemans, W.; Kohlhepp, J.T.; Bobbert, P.A.; Swagten, H.J.M.; Koopmans, B.

    2009-01-01

    By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5nm)/tris(8- hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of

  17. Correlations between atomic structure and giant magnetoresistance ratio in Co2(Fe,Mn)Si spin valves

    International Nuclear Information System (INIS)

    Lari, L; Sizeland, J; Gilks, D; Uddin, G M; Nedelkoski, Z; Hasnip, P J; Lazarov, V K; Yoshida, K; Galindo, P L; Sato, J; Oogane, M; Ando, Y; Hirohata, A

    2014-01-01

    We show that the magnetoresistance of Co 2 Fe x Mn 1−x Si-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co 2 Fe x Mn 1−x Si/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350 °C and 500 °C creates partial B2/L2 1 and fully L2 1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co 2 Fe x Mn 1−x Si interface is more ordered compared to the Co 2 Fe x Mn 1−x Si/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible. (fast track communication)

  18. Effect of uniaxial strain on the tunnel magnetoresistance of T-shaped graphene nanoribbon based spin-valve

    Science.gov (United States)

    Fouladi, A. Ahmadi

    2016-07-01

    We theoretically investigated the spin-dependent transport through a T-shaped graphene nanoribbon (TsGNR) based spin-valve consisting of armchair graphene sandwiched between two semi-infinite ferromagnetic armchair graphene nanoribbon leads in the presence of an applied uniaxial strain. Based on a tight-binding model and standard nonequilibrium Green's function technique, it is demonstrated that the tunnel magnetoresistance (TMR) for the system can be increased about 98% by tuning the uniaxial strain. Our results show that the absolute values of TMR around the zero bias voltage for compressive strain are larger than tensile strain. In addition, the TMR of the system can be nicely controlled by GNR width.

  19. Biomolecule detection using wheatstone bridge giant magnetoresistance (GMR) sensors based on CoFeB spin-valve thin film

    Science.gov (United States)

    Elda Swastika, P.; Antarnusa, G.; Suharyadi, E.; Kato, T.; Iwata, S.

    2018-04-01

    A potential wheatstone bridge giant magnetoresistance (GMR) biosensor have been successfully developed for biomolecule detection. [IrMn(10 nm)/CoFe(3 nm)/Cu(2.2 nm)/CoFeB(10 nm)] spin-valve structure has been chosen as the magnetic sensing surface, showing a magnetoresistance (MR) of 6% fabricated by DC magnetron sputtering method. The Fe3O4 magnetic nanoparticles used as biomolecular labels (nanotags) was synthesized by co-precipitation method, exhibiting soft magnetic behavior with saturation magnetization (Ms), remanent magnetization (Mr) and coercivity (Hc) is 77.2 emu/g, 7.8 emu/g and 51 Oe, respectively. The X-ray diffraction (XRD) patterns and transmission electron microscopy (TEM) images showed that Fe3O4 was well crystallized and grew in their inverse spinel structure, highly uniform morphology with an average grain size was about 20 nm. Fe3O4 was coated with polyethylene-glycol (PEG)-4000 for surface functionalization. Detection of biomolecule such as formalin, gelatin from bovine-skin and porcine-skin were dispersed in ethanol at room temperature. Induction would cause a shift in output voltage with a minimum delta output voltage (ΔV) 4.937 mV (10%) for formalin detection, 2.268 mV (7%) for bovine-skin gelatin and 2.943 mV (7%) for porcine-skin gelatin detection. The ΔV of the wheatstone bridge in real-time measurement decrease by increase in biomolecules concentration. The change of ΔV with various concentration of biomolecule indicates that the spin-valve thin film with wheatstone-bridge circuit is potential as a biosensor.

  20. Nanoscale magnetic characterization of tunneling magnetoresistance spin valve head by electron holography.

    Science.gov (United States)

    Park, Hyun Soon; Hirata, Kei; Yanagisawa, Keiichi; Ishida, Yoichi; Matsuda, Tsuyoshi; Shindo, Daisuke; Tonomura, Akira

    2012-12-07

    Nanostructured magnetic materials play an important role in increasing miniaturized devices. For the studies of their magnetic properties and behaviors, nanoscale imaging of magnetic field is indispensible. Here, using electron holography, the magnetization distribution of a TMR spin valve head of commercial design is investigated without and with a magnetic field applied. Characterized is the magnetic flux distribution in complex hetero-nanostructures by averaging the phase images and separating their component magnetic vectors and electric potentials. The magnetic flux densities of the NiFe (shield and 5 nm-free layers) and the CoPt (20 nm-bias layer) are estimated to be 1.0 T and 0.9 T, respectively. The changes in the magnetization distribution of the shield, bias, and free layers are visualized in situ for an applied field of 14 kOe. This study demonstrates the promise of electron holography for characterizing the magnetic properties of hetero-interfaces, nanostructures, and catalysts. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

    Science.gov (United States)

    Zhang, Yue; Yan, Baiqian; Ou-Yang, Jun; Wang, Xianghao; Zhu, Benpeng; Chen, Shi; Yang, Xiaofei

    2016-01-01

    Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 104 J/m3 and 10 × 104 J/m3, the output performance can be significantly manipulated: The linear range alters from between -330 Oe and 330 Oe to between -650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2-20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance.

  2. Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yue; Yan, Baiqian; Ou-Yang, Jun; Zhu, Benpeng; Chen, Shi; Yang, Xiaofei, E-mail: hust-yangxiaofei@163.com [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wang, Xianghao [School of Information Engineering, Wuhan University of Technology, Wuhan 430070 (China)

    2016-01-28

    Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 10{sup 4 }J/m{sup 3} and 10 × 10{sup 4 }J/m{sup 3}, the output performance can be significantly manipulated: The linear range alters from between −330 Oe and 330 Oe to between −650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2–20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance.

  3. Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

    International Nuclear Information System (INIS)

    Zhang, Yue; Yan, Baiqian; Ou-Yang, Jun; Zhu, Benpeng; Chen, Shi; Yang, Xiaofei; Wang, Xianghao

    2016-01-01

    Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 10 4  J/m 3 and 10 × 10 4  J/m 3 , the output performance can be significantly manipulated: The linear range alters from between −330 Oe and 330 Oe to between −650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2–20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance

  4. Giant magnetoresistance effect in CoZr/Cu/Co spin-valve films (abstract)

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Youssef, J. [CNRS-LMIMS, 92195 Meudon-Bellevue (France)]|[LPM Universite Mohammed V, Rabat (Morocco); Koshkina, O.; Le Gall, H. [CNRS-LMIMS, 92195 Meudon-Bellevue (France); Harfaoui, M.E. [LPMC Universite Ibn Tofail Kenitra (Morocco); Bouziane, K. [CNRS-LMIMS, 92195 Meudon-Bellevue (France); Yamani, M.E. [LPM Universite Mohammed V, Rabat (Morocco); Desvignes, J.M. [CNRS-LMIMS, 92195 Meudon-Bellevue (France)

    1997-04-01

    A high sensitivity of giant magnetoresistance (GMR) has been observed recently from soft magnetic layers such as NiFe, NiFeCo, and FeCoB. Amorphous CoZr alloys present ultrasoft properties compared to NiFe. GMR has been investigated for amorphous CoZr/Cu/Co thin films grown by rf diode sputtering using a target consisting of a Co disk partially covered with a Zr foil. The influence of the argon pressure on Cu layer deposition, Cu thickness, and Zr content on magnetic and transport properties was analyzed. The highest value of transverse GMR obtained along the easy axis is 3.6{percent} and the MR curve was saturated in a magnetic field of 100 Oe at room temperature. GMR shows scaling behavior with the sample composition. Very high sensitivity, around 1{endash}2{percent}/Oe was observed in a CoZr (3 nm)/Cu (3 nm)/Co (2 nm) sandwich. This study shows a large dependence of GMR on Cu thickness and the maximum of magnetoresistance strongly depending on the Ar pressure which modifies the interface roughness. The Zr content also influences the magnetotransport properties ({Delta}R/R and {Delta}R/R{Delta}H). The difference in coercivity between soft magnetic CoZr and hard magnetic Co layers induces antiferromagnetic alignment. Therefore a high MR ratio and field sensitivity are achieved by improving the magnetic properties of the CoZr layer.{copyright} {ital 1997 American Institute of Physics.}

  5. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction

    Czech Academy of Sciences Publication Activity Database

    Park, B.G.; Wunderlich, Joerg; Martí, X.; Holý, V.; Kurosaki, Y.; Yamada, M.; Yamamoto, H.; Nishide, A.; Hayakawa, J.; Takahashi, H.; Shick, Alexander; Jungwirth, Tomáš

    2011-01-01

    Roč. 10, č. 5 (2011), s. 347-351 ISSN 1476-1122 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 268066 - 0MSPIN; European Commission(XE) 214499 - NAMASTE; European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 32.841, year: 2011

  6. Effect of nano-oxide layers on giant magnetoresistance in pseudo-spin-valves using Co2FeAl electrodes

    International Nuclear Information System (INIS)

    Zhang, D.L.; Xu, X.G.; Wu, Y.; Miao, J.; Jiang, Y.

    2011-01-01

    We studied the pseudo-spin-valves (PSVs) with a structure of Ta/Co 2 FeAl/NOL 1 /Co 2 FeAl/Cu/Co 2 FeAl/NOL 2 /Ta, where NOL represents the nano-oxide layer. Compared with the normal Co 2 FeAl (CFA) PSV with a structure of Ta/Co 2 FeAl/Cu/Co 2 FeAl/Ta, which shows only a current-in-plane (CIP) giant magnetoresistance (GMR) of 0.03%, the CFA PSV with NOLs shows a large CIP-GMR of 5.84%. The enhanced GMR by the NOLs inserted in the CFA PSV is due to the large specular reflection caused by [(CoO)(Fe 2 O 3 )(Al 2 O 3 )] in NOL 1 and [(Fe 2 O 3 )(Al 2 O 3 )(Ta 2 O 5 )] in NOL 2 . Another reason is that the roughness of the interface between Ta and CFA is improved by the oxidation procedure. - Research highlights: → Nano-oxide layers are applied in the pseudo-spin-valves with the Heusler alloy. → The CIP-GMR of pseudo-spin-valves is improved from 0.03% to 5.84%. → The GMR ratio is decided by the position of nano-oxide layers.

  7. Novel room-temperature spin-valve-like magnetoresistance in magnetically coupled nano-column Fe3O4/Ni heterostructure.

    Science.gov (United States)

    Xiao, Wen; Song, Wendong; Herng, Tun Seng; Qin, Qing; Yang, Yong; Zheng, Ming; Hong, Xiaoliang; Feng, Yuan Ping; Ding, Jun

    2016-08-25

    Herein, we design a room-temperature spin-valve-like magnetoresistance in a nano-column Fe3O4/Ni heterostructure without using a non-magnetic spacer or pinning layer. An Fe3O4 nano-column film is self-assembled on a Ni underlayer by the thermal decomposition method. The wet-chemical self-assembly is facile, economical and scalable. The magnetoresistance (MR) response of the Ni underlayer in the heterostructure under positive and negative out-of-plane magnetic fields differ by ∼0.25 at room temperature and ∼0.43 at 100 K. We attribute the spin-valve-like magnetoresistance to the unidirectional magnetic anisotropy of the Ni underlayer when being magnetically coupled by the Fe3O4 nano-column film. The out-of-plane negative-field magnetization is higher than the positive-field magnetization, affirming the unidirectional magnetic anisotropy of the Fe3O4/Ni heterostructure. Temperature-dependent magnetic and resistivity studies illustrate a close correlation between the magnetization transition of Fe3O4 and resistivity transition of Ni and prove a magnetic coupling between the Fe3O4 and Ni. First-principles calculations reveal that the Fe3O4/Ni model under a negative magnetic field is energetically more stable than that under a positive magnetic field. Furthermore, partial density of states (PDOS) analysis demonstrates the unidirectional magnetic anisotropy of the Ni 3d orbital. This is induced by the strong ferromagnetic coupling between Fe3O4 and Ni via oxygen-mediated Fe 3d-O 2p-Ni 3d hybridizations.

  8. Towards sub-200 nm nano-structuring of linear giant magneto-resistive spin valves by a direct focused ion beam milling process

    International Nuclear Information System (INIS)

    Riedmüller, Benjamin; Huber, Felix; Herr, Ulrich

    2014-01-01

    In this work, we present a detailed investigation of a focused ion beam (FIB) assisted nano-structuring process for giant magneto-resistive (GMR) spin valve sensors. We have performed a quantitative study of the dependence of the GMR ratio as well as the sensor resistance on the ion dose, which is implanted in the active region of our sensors. These findings are correlated with the decrease of magneto-resistive properties after micro- and nano-structuring by the FIB and reveal the importance of ion damage which limits the applicability of FIB milling to GMR devices in the low μm range. Deposition of a protective layer (50 nm SiO 2 ) on top of the sensor structure before milling leads to a preservation of the magneto-resistive properties after the milling procedure down to sensor dimensions of ∼300 nm. The reduction of the sensor dimensions to the nanometer regime is accompanied by a shift of the GMR curves, and a modification of the saturation behavior. Both effects can be explained by a micromagnetic model including the magnetic interaction of free and pinned layer as well as the effect of the demagnetizing field of the free layer on the sensor behavior. The results demonstrate that the FIB technology can be successfully used to prepare spintronic nanostructures

  9. Nanosized perpendicular organic spin-valves

    Energy Technology Data Exchange (ETDEWEB)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Richter, Tim [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)

    2015-03-09

    A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

  10. Improved corrosion resistance of spin-valve film

    International Nuclear Information System (INIS)

    Tetsukawa, H.; Hommura, H.; Okabe, A.; Soda, Y.

    2007-01-01

    We investigated the corrosion behavior and magnetoresistance of spin-valve film in order to improve the corrosion resistance of the spin-valve head for a tape recording system. The conventional spin-valve head (sub./Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta) with no diamond-like carbon (DLC) protective layer showed poor corrosion resistance. This is because the CoFe for ferromagnetic layer and Cu for spacer in the spin-valve film exhibited poor corrosion resistance. The corrosion resistance of the CoFe film and Cu film improved with the addition of Ni and Au, respectively. The spin-valve film (sub./Ta/NiFe/CoNiFe/CuAu/CoNiFe/PtMn/Ta) showed higher pitting potential than the conventional spin-valve film by +0.45 V. This presents a significant improvement over the conventional spin-valve film. We also investigated the effect of the composition of ferromagnetic layer and spacer on the magnetoresistance of the spin-valve film. The magnetoresistance of the spin-valve film by substitution of CoNiFe for CoFe in ferromagnetic layer decreased slightly. The magnetoresistance of the spin-valve film decreased as the addition of Au of the spacer increased. The diffusion at CoNiFe/CuAu interface has not been observed in annealing process. The quantitative relation between corrosion resistance and magnetoresistance of spin-valve film, and its ferromagnetic layer and spacer's compositions have been clarified. The output voltage at 50 Oe of the corrosion-resistant spin-valve head with CoNiFe ferromagnetic layer and CuAu spacer was about 50% of that of the conventional spin-valve head

  11. Improved corrosion resistance of spin-valve film

    Energy Technology Data Exchange (ETDEWEB)

    Tetsukawa, H. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)]. E-mail: tetsukaw@arc.sony.co.jp; Hommura, H. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan); Okabe, A. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan); Soda, Y. [Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)

    2007-06-15

    We investigated the corrosion behavior and magnetoresistance of spin-valve film in order to improve the corrosion resistance of the spin-valve head for a tape recording system. The conventional spin-valve head (sub./Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta) with no diamond-like carbon (DLC) protective layer showed poor corrosion resistance. This is because the CoFe for ferromagnetic layer and Cu for spacer in the spin-valve film exhibited poor corrosion resistance. The corrosion resistance of the CoFe film and Cu film improved with the addition of Ni and Au, respectively. The spin-valve film (sub./Ta/NiFe/CoNiFe/CuAu/CoNiFe/PtMn/Ta) showed higher pitting potential than the conventional spin-valve film by +0.45 V. This presents a significant improvement over the conventional spin-valve film. We also investigated the effect of the composition of ferromagnetic layer and spacer on the magnetoresistance of the spin-valve film. The magnetoresistance of the spin-valve film by substitution of CoNiFe for CoFe in ferromagnetic layer decreased slightly. The magnetoresistance of the spin-valve film decreased as the addition of Au of the spacer increased. The diffusion at CoNiFe/CuAu interface has not been observed in annealing process. The quantitative relation between corrosion resistance and magnetoresistance of spin-valve film, and its ferromagnetic layer and spacer's compositions have been clarified. The output voltage at 50 Oe of the corrosion-resistant spin-valve head with CoNiFe ferromagnetic layer and CuAu spacer was about 50% of that of the conventional spin-valve head.

  12. Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

    Science.gov (United States)

    Maji, Nilay; Kar, Uddipta; Nath, T. K.

    2018-02-01

    The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

  13. Structure and magnetoresistive properties of current-perpendicular-to-plane pseudo-spin valves using polycrystalline Co2Fe-based Heusler alloy films

    International Nuclear Information System (INIS)

    Nakatani, T.M.; Du, Ye; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

    2013-01-01

    We report current-perpendicular-to-plane giant magnetoresistance (CPP–GMR) of pseudo-spin valves (PSVs) with polycrystalline Co 2 Fe(Al 0.5 Si 0.5 ) (CFAS) and Co 2 Fe(Ga 0.5 Ge 0.5 ) (CFGG) Heusler alloy films. Strongly [0 1 1] textured polycrystalline Heusler alloy films grew on the Ta/Ru/Ag underlayer. Relatively large CPP–GMR values of ΔRA up to 4 mΩ μm 2 and ΔR/R up to 10% were obtained with 5 nm thick Heusler alloy films and Ag spacer layer by annealing CFAS PSV at 450 °C and CFGG PSV at 350 °C. Transmission electron microscopy revealed a flat and sharp interface between the [0 1 1] textured CFAS layers and the [1 1 1] textured Ag spacer layer. Annealing above an optimal temperature for each PSV led to reductions in MR values as a result of the thickening of the spacer layer induced by the Ag diffusion from the outer Ag layers

  14. Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

    KAUST Repository

    Dolui, Kapildeb; Narayan, Awadhesh; Rungger, Ivan; Sanvito, Stefano

    2014-01-01

    bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

  15. Superconducting spin-triplet-MRAM with infinite magnetoresistance ratio

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Ullrich, Aladin; Obermeier, Guenter; Mueller, Claus; Krug von Nidda, Hans-Albrecht; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation); Zdravkov, Vladimir I. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Institute of Applied Physics and Interdisciplinary Nanoscience Center, Universitaet Hamburg, Jungiusstrasse 9A, D-20355 Hamburg (Germany); Sidorenko, Anatoli S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Tagirov, Lenar R. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation)

    2016-07-01

    We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, i.e. the superconducting transition temperature of this structure depends on its magnetic history. The observed spin-valve effect is based on the generation of the long range odd in frequency triplet component, arising from a non-collinear relative orientation of the constituent ferromagnetic layers. We investigated the effect both as a function of the sweep amplitude of the magnetic field, determining the magnetic history, and the applied transport current. Moreover, we demonstrate the possibility of switching the system from the normal o the superconducting state by applying field pulses, yielding an infinite magnetoresistance ratio.

  16. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  17. Inverse spin-valve effect in nanoscale Si-based spin-valve devices

    Science.gov (United States)

    Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

    2017-12-01

    We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

  18. Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

    Directory of Open Access Journals (Sweden)

    M. Ciorga

    2011-06-01

    Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

  19. Role of spin polarized tunneling in magnetoresistance and low

    Indian Academy of Sciences (India)

    Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue

  20. Magnetic structure of the spin valve interface

    International Nuclear Information System (INIS)

    Nicholson, D.M.C.; Butler, W.H.; Zhang, X.; MacLaren, J.M.; Gurney, B.A.; Speriosu, V.S.

    1994-01-01

    Nonferromagnetic atoms present at Ni/Cu and Permalloy/Cu interfaces in sputtered spin valve magnetoresistive layered structures have been shown to cause reduced magnetoresistance. Here we show that a model in which the moments on the Ni atoms in the interfacial region of Ni/Cu are reduced substantially by interdiffusion with Cu is consistent with the experimental results. In contrast, we believe that moments persist at the permalloy/Cu interface, which first principle total energy calculations suggest will be disordered at finite temperatures. These reduced or disordered moments are expected to significantly reduce the GMR

  1. Spin Hall magnetoresistance at high temperatures

    International Nuclear Information System (INIS)

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-01-01

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y 3 Fe 5 O 12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface

  2. Interlayer quality dependent graphene spin valve

    International Nuclear Information System (INIS)

    Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid Mahmood

    2017-01-01

    It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

  3. Interlayer quality dependent graphene spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Ramay, Shahid Mahmood [Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

    2017-01-15

    It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

  4. Effect of NiAl underlayer and spacer on magnetoresistance of current-perpendicular-to-plane spin valves using Co2Mn(Ga0.5Sn0.5) Heusler alloy

    International Nuclear Information System (INIS)

    Hase, N.; Nakatani, T.M.; Kasai, S.; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

    2012-01-01

    We investigated the effect of a NiAl underlayer and spacer on magnetoresistive (MR) properties in current-perpendicular-to-plane spin valves (CPP-SVs) using Co 2 Mn(Ga 0.5 Sn 0.5 ) (CMGS) Heusler alloy ferromagnetic layers. The usage of a NiAl underlayer allowed a high temperature annealing for the L2 1 ordering of the bottom CMGS layer, giving rise to a MR ratio of 10.2% at room temperature. We found that the usage of a NiAl spacer layer also improved the tolerance of the multilayer structure against thermal delamination, which allowed annealing to induce the L2 1 structure in both the bottom and top CMGS layers. However, the short spin diffusion length of NiAl resulted in a lower MR ratio compared to that obtained using a Ag spacer. Transmission electron microscopy of the multilayer structure of CPP-SVs showed that the atomically flat layered structure was maintained after the annealing. - Highlights: → CPP spin valves using Co 2 Mn(Ga 0.5 Sn 0.5 ) ferromagnetic layers with a new underlayer material. → NiAl underlayer and spacer improve the thermal tolerance of the spin valve structure. → NiAl underlayer improves MR ratio compared to Ag because of higher annealing temperature. → NiAl spacer degrades MR ratios compared to Ag because of short spin diffusion length. → Potential of heat resistant underlayer and spacer layer for CPP-SV using Heusler alloy.

  5. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

    Science.gov (United States)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-12-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  6. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  7. Graphene spin valve: An angle sensor

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

    2017-06-15

    Graphene spin valves can be optimized for various spintronic applications by tuning the associated experimental parameters. In this work, we report the angle dependent magnetoresistance (MR) in graphene spin valve for different orientations of applied magnetic field (B). The switching points of spin valve signals show a clear shift towards higher B for each increasing angle of the applied field, thus sensing the response for respective orientation of the magnetic field. The angular variation of B shifts the switching points from ±95 G to ±925 G as the angle is varied from 0° to 90° at 300 K. The observed shifts in switching points become more pronounced (±165 G to ±1450 G) at 4.2 K for similar orientation. A monotonic increase in MR ratio is observed as the angle of magnetic field is varied in the vertical direction at 300 K and 4.2 K temperatures. This variation of B (from 0° to 90°) increases the magnitude of MR ratio from ∼0.08% to ∼0.14% at 300 K, while at 4.2 K it progresses to ∼0.39% from ∼0.14%. The sensitivity related to angular variation of such spin valve structure can be employed for angle sensing applications.

  8. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  9. Magnetoresistance in RCo2 spin-fluctuation systems

    International Nuclear Information System (INIS)

    Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

    2004-01-01

    The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

  10. Spin-flip induced magnetoresistance in positionally disordered organic solids.

    Science.gov (United States)

    Harmon, N J; Flatté, M E

    2012-05-04

    A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

  11. Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

    Science.gov (United States)

    Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

    2018-03-01

    We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

  12. Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

    KAUST Repository

    Dolui, Kapildeb

    2014-07-02

    We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness, a maximum magnetoresistance of ∼300% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

  13. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  14. Spin valve sensor for biomolecular identification: Design, fabrication, and characterization

    Science.gov (United States)

    Li, Guanxiong

    Biomolecular identification, e.g., DNA recognition, has broad applications in biology and medicine such as gene expression analysis, disease diagnosis, and DNA fingerprinting. Therefore, we have been developing a magnetic biodetection technology based on giant magnetoresistive spin valve sensors and magnetic nanoparticle (developed for the magnetic nanoparticle detection, assuming the equivalent average field of magnetic nanoparticles and the coherent rotation of spin valve free layer magnetization. Micromagnetic simulations have also been performed for the spin valve sensors. The analytical model and micromagnetic simulations are found consistent with each other and are in good agreement with experiments. The prototype spin valve sensors have been fabricated at both micron and submicron scales. We demonstrated the detection of a single 2.8-mum magnetic microbead by micron-sized spin valve sensors. Based on polymer-mediated self-assembly and fine lithography, a bilayer lift-off process was developed to deposit magnetic nanoparticles onto the sensor surface in a controlled manner. With the lift-off deposition method, we have successfully demonstrated the room temperature detection of monodisperse 16-nm Fe3O 4 nanoparticles in a quantity from a few tens to several hundreds by submicron spin valve sensors, proving the feasibility of the nanoparticle detection. As desired for quantitative biodetection, a fairly linear dependence of sensor signal on the number of nanoparticles has been confirmed. The initial detection of DNA hybridization events labeled by magnetic nanoparticles further proved the magnetic biodetection concept.

  15. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  16. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  17. Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.; Hono, K. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Miura, Y. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Kyoto Institute of Technology, Electrical Engineering and Electronics, Kyoto 606-8585 (Japan)

    2016-03-07

    We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) at room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.

  18. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  19. Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

    Science.gov (United States)

    Cheng, Yihong; Chen, Kai; Zhang, Shufeng

    2018-01-01

    We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

  20. Magnetoresistance in spin glass alloys: Theory and experiment

    International Nuclear Information System (INIS)

    Mookerjee, A.; Chowdhury, D.

    1984-11-01

    The magnetoresistance of spin glass alloys is examined within the percolation model of Mookerjee and Chowdhury (1983), the mode freezing model of Hertz (1983) and the constrained relaxation model of Palmer et al. (1984). All three models yield qualitatively similar results in excellent agreement with the experiments of Majumdar (1983, 1984) on AgMn. (author)

  1. Flexible semi-transparent organic spin valve based on bathocuproine

    International Nuclear Information System (INIS)

    Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r = 5 mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

  2. Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

    Directory of Open Access Journals (Sweden)

    Ahmed Kenawy

    2017-05-01

    Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

  3. Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

    Science.gov (United States)

    Ulloa, Camilo; Duine, R. A.

    2018-04-01

    Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

  4. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    Science.gov (United States)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-01

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ˜5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ˜400%.

  5. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    International Nuclear Information System (INIS)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-01

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%

  6. Tuning spin transport properties and molecular magnetoresistance through contact geometry.

    Science.gov (United States)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  7. Influence of mechanical strain on magnetic characteristics of spin valves

    International Nuclear Information System (INIS)

    Ac, V; Anwarzai, B; Luby, S; Majkova, E

    2008-01-01

    Giant magnetoresistance (GMR) of Co and Fe-Co based e-beam evaporated spin valves with Cu and Au spacers was studied. The effect of strain on samples, which is detrimental in standard GMR sensors, was measured in a bending configuration. The different dependences of coercivity H c and magnetic field H ip in the point of inflection of MR loops vs. strain were found. For sample with Co/Au/Co core, H c , H ip increase with increasing compressive stress, whereas for sample with FeCo/Cu/Co core they increase with tensile stress. The highest relative change of MR ratio vs. bending in the strain interval ± 300 x 10 -6 is 1-2 % of the basic magnetoresistance and, practically, it does not influence the SV output

  8. Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-02

    For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co 2 Fe 6 B 2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt ): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co 2 Fe 6 B 2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

  9. The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

    International Nuclear Information System (INIS)

    Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

    2012-01-01

    We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Spin motive forces, 'measurements', and spin-valves

    International Nuclear Information System (INIS)

    Barnes, S.E.

    2007-01-01

    Discussed is the spin motive force (smf) produced by a spin valve, this reflecting its dynamics. Relaxation implies an implicit measurement of the magnetization of the free layer of a valve. It is shown this has implications for the angular dependence of the torque transfer. Some discussion of recent experiments is included

  11. Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

    Science.gov (United States)

    Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

    2017-11-09

    Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

  12. Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

    International Nuclear Information System (INIS)

    Zou Jianfei; Jin Guojun; Ma Yuqiang

    2009-01-01

    We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

  13. Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

    Science.gov (United States)

    Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

    2009-03-25

    We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

  14. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

    Science.gov (United States)

    Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

    2016-01-08

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

  15. Spin Valve Systems for Angle Sensor Applications

    OpenAIRE

    Johnson, Andrew

    2004-01-01

    A contact-less sensor with the ability to measure over a 360° range has been long sought after in the automotive industry. Such a sensor could be realized by utilizing the angle dependence of the Giant Magneto Resistance (GMR) Effect in a special type of magnetic multilayer called a spin valve arranged in a wheatstone bridge circuit [Spo96]. A spin valve consists of two ferromagnetic layers separated by nonmagnetic spacer layer where the magnetization of one of the ferromagnetic layers is pin...

  16. FY1995 study of high density near-contact magnetic recording using spin valve head; 1995 nendo spin valve head ni yoru chokomitsudo near contact jiki kiroku no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Development of high performance spin valves formed by amorphous magnetic layer and head-medium interface with nano-thickness molecular film for realizing an ultra-high density of 20 Gbit/in{sup 2} using contact recording. The giant magnetoresistance effect was investigated for spin valves using very thin amorphous magnetic layer. In amorphous-CoFeB/Cu/ Co spin valves, the maximum MR ratio of 6% was achieved at the thickness of the amorphous layer of 2 nm. The spin valves with the amorphous layer exhibit very good thermal stability. Design guideline for molecularly thin lubricant was established using newly derived lubrication equation considering lubricant porosity. Novel method for accurately measuring surface force due to molecularly thin lubricant was developed by using Michelson interferometry to detect cantilever displacement, which enabled two-dimensional transient force measurement. (NEDO)

  17. Spin current through quantum-dot spin valves

    International Nuclear Information System (INIS)

    Wang, J; Xing, D Y

    2006-01-01

    We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

  18. Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance

    NARCIS (Netherlands)

    Vlietstra, N.; Shan, J.; Castel, V.; Ben Youssef, J.; Bauer, G. E. W.; van Wees, B. J.

    2013-01-01

    The effective field torque of an yttrium-iron-garnet (YIG) film on the spin accumulation in an attached platinum (Pt) film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental

  19. Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Luping [Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhan, Qingfeng, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Li, Run-Wei, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Tan, Xiaohua [Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

    2016-03-15

    We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

  20. Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

    International Nuclear Information System (INIS)

    Liu, Luping; Zhan, Qingfeng; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Li, Run-Wei; Tan, Xiaohua

    2016-01-01

    We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

  1. Magnetostrictive GMR spin valves with composite FeGa/FeCo free layers

    Science.gov (United States)

    Liu, Luping; Zhan, Qingfeng; Yang, Huali; Li, Huihui; Zhang, Shuanglan; Liu, Yiwei; Wang, Baomin; Tan, Xiaohua; Li, Run-Wei

    2016-03-01

    We have fabricated strain-sensitive spin valves on flexible substrates by utilizing the large magnetostrictive FeGa alloy to promote the strain sensitivity and the composite free layer of FeGa/FeCo to avoid the drastic reduction of giant magnetoresistance (GMR) ratio. This kind of spin valve (SV-FeGa/FeCo) displays a MR ratio about 5.9%, which is comparable to that of the conventional spin valve (SV-FeCo) with a single FeCo free layer. Different from the previously reported works on magnetostrictive spin valves, the SV-FeGa/FeCo displays an asymmetric strain dependent GMR behavior. Upon increasing the lateral strain, the MR ratio for the ascending branch decreases more quickly than that for the descending branch, which is ascribed to the formation of a spiraling spin structure around the FeGa/FeCo interface under the combined influences of both magnetic field and mechanical strain. A strain sensitivity of GF = 7.2 was achieved at a magnetic bias field of -30 Oe in flexible SV-FeGa/FeCo, which is significantly larger than that of SV-FeCo.

  2. Spin injection and spin accumulation in all-metal mesoscopic spin valves

    NARCIS (Netherlands)

    Jedema, FJ; Nijboer, MS; Filip, AT; van Wees, BJ

    2003-01-01

    We study the electrical injection and detection of spin accumulation in lateral ferromagnetic-metal-nonmagnetic-metal-ferromagnetic-metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, Permalloy (Py), cobalt (Co), and nickel (Ni), are used as electrical spin

  3. Correlation between magnetoresistance and magnetization in Ag Mn and Au Mn spin glasses

    International Nuclear Information System (INIS)

    Majumdar, A.K.

    1982-08-01

    Magnetization has been measured between 2 and 77 K and mostly up to fields of 20 K Oe in Ag Mn (1.1 and 5.4 at %) and Au Mn (1.8 and 4.6 at %) spin glass samples where the transverse magnetoresistance was measured earlier. It is found for the first time over a wide range of temperature and magnetic field that the negative magnetoresistance varies as the square of the bulk magnetization resulting in an universal curve in the spin glass regime. A theoretical justification is provided in terms of exciting theories. (author)

  4. Stretchable Spin Valve with Stable Magnetic Field Sensitivity by Ribbon-Patterned Periodic Wrinkles.

    Science.gov (United States)

    Li, Huihui; Zhan, Qingfeng; Liu, Yiwei; Liu, Luping; Yang, Huali; Zuo, Zhenghu; Shang, Tian; Wang, Baomin; Li, Run-Wei

    2016-04-26

    A strain-relief structure by combining the strain-engineered periodic wrinkles and the parallel ribbons was employed to fabricate flexible dual spin valves onto PDMS substrates in a direct sputtering method. The strain-relief structure can accommodate the biaxial strain accompanying with stretching operation (the uniaxial applied tensile strain and the induced transverse compressive strain due to the Poisson effect), thus significantly reducing the influence of the residual strain on the giant magnetoresistance (GMR) performance. The fabricated GMR dual spin-valve sensor exhibits the nearly unchanged MR ratio of 9.9%, magnetic field sensitivity up to 0.69%/Oe, and zero-field resistance in a wide range of stretching strain, making it promising for applications on a conformal shape or a movement part.

  5. Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

    Science.gov (United States)

    Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

    The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

  6. Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.

    Science.gov (United States)

    Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping

    2018-01-09

    The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

  7. Role of the magnetic anisotropy in organic spin valves

    Directory of Open Access Journals (Sweden)

    V. Kalappattil

    2017-09-01

    Full Text Available Magnetic anisotropy plays an important role in determining the magnetic functionality of thin film based electronic devices. We present here, the first systematic study of the correlation between magnetoresistance (MR response in organic spin valves (OSVs and magnetic anisotropy of the bottom ferromagnetic electrode over a wide temperature range (10 K–350 K. The magnetic anisotropy of a La0.67Sr0.33MnO3 (LSMO film epitaxially grown on a SrTiO3 (STO substrate was manipulated by reducing film thickness from 200 nm to 20 nm. Substrate-induced compressive strain was shown to drastically increase the bulk in-plane magnetic anisotropy when the LSMO became thinner. In contrast, the MR response of LSMO/OSC/Co OSVs for many organic semiconductors (OSCs does not depend on either the in-plane magnetic anisotropy of the LSMO electrodes or their bulk magnetization. All the studied OSV devices show a similar temperature dependence of MR, indicating a similar temperature-dependent spinterface effect irrespective of LSMO thickness, resulting from the orbital hybridization of carriers at the OSC/LSMO interface.

  8. Tailoring anisotropic magnetoresistance and giant magnetoresistance hysteresis loops with spin-polarized current injection

    International Nuclear Information System (INIS)

    Wegrowe, J.-E.; Kelly, D.; Hoffer, X.; Guittienne, Ph.; Ansermet, J.-Ph.

    2001-01-01

    Current pulses were injected into magnetic nanowires. Their effect on the magnetoresistance hysteresis loops was studied for three morphologies: homogeneous Ni wires, copper wires containing five cobalt/copper bilayers, and hybrid structures composed of a homogeneous Ni half wire and a multilayered Co/Cu half wire. The characteristic features of the action of the current on the magnetization are shown and discussed. [copyright] 2001 American Institute of Physics

  9. Enhanced Magnetoresistance in Molecular Junctions by Geometrical Optimization of Spin-Selective Orbital Hybridization.

    Science.gov (United States)

    Rakhmilevitch, David; Sarkar, Soumyajit; Bitton, Ora; Kronik, Leeor; Tal, Oren

    2016-03-09

    Molecular junctions based on ferromagnetic electrodes allow the study of electronic spin transport near the limit of spintronics miniaturization. However, these junctions reveal moderate magnetoresistance that is sensitive to the orbital structure at their ferromagnet-molecule interfaces. The key structural parameters that should be controlled in order to gain high magnetoresistance have not been established, despite their importance for efficient manipulation of spin transport at the nanoscale. Here, we show that single-molecule junctions based on nickel electrodes and benzene molecules can yield a significant anisotropic magnetoresistance of up to ∼200% near the conductance quantum G0. The measured magnetoresistance is mechanically tuned by changing the distance between the electrodes, revealing a nonmonotonic response to junction elongation. These findings are ascribed with the aid of first-principles calculations to variations in the metal-molecule orientation that can be adjusted to obtain highly spin-selective orbital hybridization. Our results demonstrate the important role of geometrical considerations in determining the spin transport properties of metal-molecule interfaces.

  10. Spin current and spin transfer torque in ferromagnet/superconductor spin valves

    Science.gov (United States)

    Moen, Evan; Valls, Oriol T.

    2018-05-01

    Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

  11. Magnetic transport property of NiFe/WSe{sub 2}/NiFe spin valve structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Kangkang [Key Lab of Opto-electronics Technology, Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Xing, Yanhui, E-mail: xingyanhui@bjut.edu.cn [Key Lab of Opto-electronics Technology, Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Han, Jun [Key Lab of Opto-electronics Technology, Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Feng, Jiafeng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences (CAS), Beijing 100190 (China); Shi, Wenhua; Zhang, Baoshun [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Zeng, Zhongming, E-mail: zmzeng2012@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

    2017-06-15

    Highlight: • Two-dimensional (2D) materials have been proposed as promising candidate for spintronic applications due to their atomic crystal structure and physical properties. • In this article, we introduce exfoliated few-layer tungsten diselenide (WSe{sub 2}) as spacer in a Py/WSe{sub 2}/Py vertical spin valve. • In this junction, the WSe{sub 2} spacer exhibits metallic behavior. • We observed negative magnetoresistance (MR) with a ratio of −1.1% at 4 K and −0.21% at 300 K. • A general phenomenological analysis of the negative MR property is discussed. • Our result is anticipated to be beneficial for future spintronic applications. - Abstract: Two-dimensional (2D) materials have been proposed as promising candidate for spintronic applications due to their atomic crystal structure and physical properties. Here, we introduce exfoliated few-layer tungsten diselenide (WSe{sub 2}) as spacer in a Py/WSe{sub 2}/Py vertical spin valve. In this junction, the WSe{sub 2} spacer exhibits metallic behavior. We observed negative magnetoresistance (MR) with a ratio of −1.1% at 4 K and −0.21% at 300 K. A general phenomenological analysis of the negative MR property is discussed. Our result is anticipated to be beneficial for future spintronic applications.

  12. Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

    Science.gov (United States)

    Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

    2017-07-01

    Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

  13. Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures

    Science.gov (United States)

    Hui, Ya-Juan; Cheng, Wei-Ming; Zhang, Zhao-Bing; Ji, Hong-Kai; Cheng, Xiao-Min; You, Long; Miao, Xiang-Shui

    2016-07-01

    Spin Hall magnetoresistance (SMR) has been investigated in Ta/CoFe2O4 nanostructures grown on different substrates. Spin currents in CoFe2O4 films are electrically detected in adjacent Ta layers owing to inverse spin Hall effects. The sign of the magnetic-field-dependent resistivity signal shows different polarities along different axes, showing different spin-dependent electron transports. A cosinelike curve of the angular dependence signal with opposite polarity is observed in two orthogonal magnetization planes, whereas a basic line is observed in another plane, revealing the spin accumulation phenomenon. The roughness of the CoFe2O4 surface tuned by substrate strains is responsible for the extent of spin accumulations and the strength of the SMR signal in the nanostructures.

  14. Roll Attitude Determination of Spin Projectile Based on GPS and Magnetoresistive Sensor

    Directory of Open Access Journals (Sweden)

    Dandan Yuan

    2017-01-01

    Full Text Available Improvement in attack accuracy of the spin projectiles is a very significant objective, which increases the overall combat efficiency of projectiles. The accurate determination of the projectile roll attitude is the recent objective of the efficient guidance and control. The roll measurement system for the spin projectile is commonly based on the magnetoresistive sensor. It is well known that the magnetoresistive sensor produces a sinusoidally oscillating signal whose frequency slowly decays with time, besides the possibility of blind spot. On the other hand, absolute sensors such as GPS have fixed errors even though the update rates are generally low. To earn the benefit while eliminating weaknesses from both types of sensors, a mathematical model using filtering technique can be designed to integrate the magnetoresistive sensor and GPS measurements. In this paper, a mathematical model is developed to integrate the magnetoresistive sensor and GPS measurements in order to get an accurate prediction of projectile roll attitude in a real flight time. The proposed model is verified using numerical simulations, which illustrated that the accuracy of the roll attitude measurement is improved.

  15. Large spin current injection in nano-pillar-based lateral spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Nomura, Tatsuya [Department of Physics, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan); Ohnishi, Kohei; Kimura, Takashi, E-mail: t-kimu@phys.kyushu-u.ac.jp [Department of Physics, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan)

    2016-08-26

    We have investigated the influence of the injection of a large pure spin current on a magnetization process of a non-locally located ferromagnetic dot in nano-pillar-based lateral spin valves. Here, we prepared two kinds of the nano-pillar-type lateral spin valve based on Py nanodots and CoFeAl nanodots fabricated on a Cu film. In the Py/Cu lateral spin valve, although any significant change of the magnetization process of the Py nanodot has not been observed at room temperature. The magnetization reversal process is found to be modified by injecting a large pure spin current at 77 K. Switching the magnetization by the nonlocal spin injection has also been demonstrated at 77 K. In the CoFeAl/Cu lateral spin valve, a room temperature spin valve signal was strongly enhanced from the Py/Cu lateral spin valve because of the highly spin-polarized CoFeAl electrodes. The room temperature nonlocal switching has been demonstrated in the CoFeAl/Cu lateral spin valve.

  16. Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition.

    Science.gov (United States)

    Datta, Subhadeep; Cai, Yongqing; Yudhistira, Indra; Zeng, Zebing; Zhang, Yong-Wei; Zhang, Han; Adam, Shaffique; Wu, Jishan; Loh, Kian Ping

    2017-09-22

    Coupling spins of molecular magnets to two-dimensional (2D) materials provides a framework to manipulate the magneto-conductance of 2D materials. However, with most molecules, the spin coupling is usually weak and devices fabricated from these require operation at low temperatures, which prevents practical applications. Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. Uniquely, QDTP switches from a spin-singlet state at low temperature to a spin-triplet state above 370 K, and the spin transition can be electrically transduced by both graphene and molybdenum disulphide. Graphene-QDTP shows hole-doping and a large positive magnetoresistance ( ~ 50%), while molybdenum disulphide-QDTP demonstrates electron-doping and a switch to large negative magnetoresistance ( ~ 100%) above the magnetic transition. Our work shows the promise of spin detection at high temperature by coupling 2D materials and molecular magnets.Engineering a coupling between magnetic molecules and conducting materials at room temperature could help the development of spintronic devices. Loh et al. show that the spin state of QDTP molecules deposited on graphene and MoS 2 couples to their electronic structure, affecting magnetotransport.

  17. Pseudo spin-valve behavior in oxide ferromagnet/superconductor/ferromagnet trilayers

    International Nuclear Information System (INIS)

    Pang, B.S.H.; Bell, C.; Tomov, R.I.; Durrell, J.H.; Blamire, M.G.

    2005-01-01

    La 0.7 Ca 0.3 MnO 3 /YBa 2 Cu 3 O 7-δ /La 0.67 Sr 0.33 MnO 3 heterostructural devices with double coercivity have been fabricated. The superconducting critical current (I c ) and critical temperature in both parallel (P) and antiparallel (AP) magnetic configurations remained unchanged within our measurement limits. This observation is contrary to results obtained elsewhere using similar metallic systems. A pseudo spin-valve magnetoresistive (MR) characteristic was observed at bias current (I bias )∼I c at temperatures below the onset of superconductivity. The effect increased with decreasing temperature and I bias and can be explained using the assumption of the electron spin-charge separation

  18. Magnon spin Hall magnetoresistance of a gapped quantum paramagnet

    NARCIS (Netherlands)

    Ulloa, Camilo; Duine, R.A.

    2018-01-01

    Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling

  19. Spin-polarized light-emitting diodes based on organic bipolar spin valves

    Science.gov (United States)

    Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

    2017-10-25

    Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

  20. Investigation of the difference between spin Hall magnetoresistance rectification and spin pumping from the viewpoint of magnetization dynamics

    Science.gov (United States)

    Zhang, Qihan; Fan, Xiaolong; Zhou, Hengan; Kong, Wenwen; Zhou, Shiming; Gui, Y. S.; Hu, C.-M.; Xue, Desheng

    2018-02-01

    Spin pumping (SP) and spin rectification due to spin Hall magnetoresistance (SMR) can result in a dc resonant voltage signal, when magnetization in ferromagnetic insulator/nonmagnetic structures experiences ferromagnetic resonance. Since the two effects are often interrelated, quantitative identification of them is important for studying the dynamic nonlocal spin transport through an interface. In this letter, the key difference between SP and SMR rectification was investigated from the viewpoint of spin dynamics. The phase-dependent nature of SMR rectification, which is the fundamental characteristic distinguishing it from SP, was tested by a well-designed experiment. In this experiment, two identical yttrium iron garnet/Pt strips with a π phase difference in dynamic magnetization show the same SP signals and inverse SMR signals.

  1. Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

    Science.gov (United States)

    Prarokijjak, Worasak; Soodchomshom, Bumned

    2018-04-01

    Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

  2. Effects of interface electric field on the magnetoresistance in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.; Sugiyama, H.; Saito, Y. [Advanced LSI Technology Laboratory Corporate Research and Development Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582 (Japan)

    2014-04-28

    An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

  3. Tailoring spin injection and magnetoresistance in ferromagnet/graphene junctions from first principles

    Science.gov (United States)

    Lazic, Predrag; Sipahi, Guilherme; Kawakami, Roland; Zutic, Igor

    2013-03-01

    Recent experimental advances in graphene suggest intriguing opportunities for novel spintronic applications which could significantly exceed the state-of-the art performance of their conventional charge-based counterparts. However, for reliable operation of such spintronic devices it is important to achieve an efficient spin injection and large magnetoresistive effects. We use the first principles calculations to guide the choice of a ferromagnetic region and its relative orientation to optimize the desired effects. We propose structures which could enable uniform spin injection, one of the key factors in implementing scalable spintronic circuits. Supported by NSF-NRI, SRC, ONR, Croatian Ministry of Science, Education, and Sports, and CCR at SUNY UB.

  4. Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.

    2013-06-01

    We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.

  5. Determining the spin dependent mean free path in Co90Fe10 using giant magnetoresistance

    Science.gov (United States)

    Shakespear, K. F.; Perdue, K. L.; Moyerman, S. M.; Checkelsky, J. G.; Harberger, S. S.; Tamboli, A. C.; Carey, M. J.; Sparks, P. D.; Eckert, J. C.

    2005-05-01

    The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a factor of 3 by 350K. For the other structure, it is 7.5±0.5nm at 5K and decreased by a factor of 1.5 by 350K. In both cases, the spin dependent mean free path approaches the typical thickness of ferromagnetic layers in spin valves at room temperature and, thus, has an impact on the choice of design parameters for the development of new spintronic devices.

  6. Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure.

    Science.gov (United States)

    Huang, Shun-Yu; Li, Hong-Lin; Chong, Cheong-Wei; Chang, Yu-Ying; Lee, Min-Kai; Huang, Jung-Chun-Andrew

    2018-01-08

    In this study, we integrated bilayer structure of covered Pt on nickel zinc ferrite (NZFO) and CoFe/Pt/NZFO tri-layer structure by pulsed laser deposition system for a spin Hall magnetoresistance (SMR) study. In the bilayer structure, the angular-dependent magnetoresistance (MR) results indicate that Pt/NZFO has a well-defined SMR behavior. Moreover, the spin Hall angle and the spin diffusion length, which were 0.0648 and 1.31 nm, respectively, can be fitted by changing the Pt thickness in the longitudinal SMR function. Particularly, the MR ratio of the bilayer structure (Pt/NZFO) has the highest changing ratio (about 0.135%), compared to the prototype structure Pt/Y 3 Fe 5 O 12 (YIG) because the NZFO has higher magnetization. Meanwhile, the tri-layer samples (CoFe/Pt/NZFO) indicate that the MR behavior is related with CoFe thickness as revealed in angular-dependent MR measurement. Additionally, comparison between the tri-layer structure with Pt/NZFO and CoFe/Pt bilayer systems suggests that the SMR ratio can be enhanced by more than 70%, indicating that additional spin current should be injected into Pt layer.

  7. Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction.

    Science.gov (United States)

    Vasili, Hari Babu; Gamino, Matheus; Gàzquez, Jaume; Sánchez, Florencio; Valvidares, Manuel; Gargiani, Pierluigi; Pellegrin, Eric; Fontcuberta, Josep

    2018-04-11

    Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a flow of charge along a nonmagnetic metal with large spin-orbit coupling. This produces a spin accumulation at the surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal for a full understanding of spin current conductance. Here, we report X-ray absorption and magnetic circular dichroism (XMCD) at Pt M and (Co, Fe) L absorption edges and atomically resolved energy electron loss spectroscopy (EELS) data of Pt/CoFe 2 O 4 bilayers, where CoFe 2 O 4 layers have been capped by Pt grown at different temperatures. It was found that the ADMR differs dramatically, dominated either by spin Hall magnetoresistance (SMR) associated with the spin Hall effect or by anisotropic magnetoresistance. The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at a higher temperature, it becomes magnetic due to interfacial Pt-(Co, Fe) alloying. These results enable differentiation of spin accumulation from interfacial chemical reconstructions and tailoring of the angular-dependent magnetoresistance.

  8. Measurement of variable magnetic reversal paths in electrically contacted pseudo-spin-valve rings

    International Nuclear Information System (INIS)

    Hayward, T J; Llandro, J; Schackert, F D O; Morecroft, D; Balsod, R B; Bland, J A C; Castano, F J; Ross, C A

    2007-01-01

    In this work we show that the measurement of single magnetic reversal events is of critical importance in order to correctly characterize the switching of magnetic microstructures. Magnetoresistance measurements are performed on two pseudo-spin-valve ring structures with high enough signal to noise to allow the probing of single reversal events. Using this technique we acquire 'switching spectra' which demonstrate that the rings exhibit a range of variable reversal paths, including a bistable reversal mechanism of the hard layer, where the two switching routes have substantially different switching fields. The signature of the variable reversal paths would have been obscured in field cycle averaged data and in the bistable case would cause a fundamental misinterpretation of the reversal behaviour

  9. Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2014-05-28

    Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green\\'s function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

  10. Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien; Waintal, Xavier

    2014-01-01

    Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

  11. Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling.

    Science.gov (United States)

    Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo

    2015-07-01

    We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

  12. Atomistic switch of giant magnetoresistance and spin thermopower in graphene-like nanoribbons

    Science.gov (United States)

    Zhai, Ming-Xing; Wang, Xue-Feng

    2016-01-01

    We demonstrate that the giant magnetoresistance can be switched off (on) in even- (odd-) width zigzag graphene-like nanoribbons by an atomistic gate potential or edge disorder inside the domain wall in the antiparallel (ap) magnetic configuration. A strong magneto-thermopower effect is also predicted that the spin thermopower can be greatly enhanced in the ap configuration while the charge thermopower remains low. The results extracted from the tight-binding model agree well with those obtained by first-principles simulations for edge doped graphene nanoribbons. Analytical expressions in the simplest case are obtained to facilitate qualitative analyses in general contexts. PMID:27857156

  13. Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Chae, Kyo-Suk; Shim, Tae-Hun; Lian, Guoda; Kim, Moon; Park, Jea-Gun

    2015-05-15

    The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (Tex) was increased from 275 to 325 °C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 °C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd]n-SyAF, abruptly reducing the Δ1 coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.

  14. Ultra-low-pressure sputtering to improve exchange bias and tune linear ranges in spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Tang, XiaoLi, E-mail: tangtang1227@163.com; Yu, You; Liu, Ru; Su, Hua; Zhang, HuaiWu; Zhong, ZhiYong; Jing, YuLan

    2017-05-01

    A series of CoFe/IrMn exchange bilayers was grown by DC-sputtering at different ultra-low argon pressures ranging from 0.008 to 0.1 Pa. This pressure range was one to two orders lower than the normal sputtering pressure. Results revealed that the exchange bias increased from 140 to 250 Oe in CoFe(10 nm)/IrMn (15 nm) bilayers of fixed thickness because of the improved crystalline structure and morphological uniformity of films. Since ferromagnetic /antiferromagnetic (FM/AF) bilayers are always used in linear magnetic sensors as detection layers, the varying exchange bias can successfully achieve tunable linear range in a crossed pinning spin valve. The linear range could be adjustable from −80 Oe – +80 Oe to −150 Oe – +150 Oe on the basis of giant magnetoresistance responses. Therefore, this method provides a simple method to tune the operating range of magnetic field sensors. - Highlights: • Increasing exchange bias was achieved in bilayer at ultra-low-pressure sputtering. • The low void density and smooth surface were achieved in low pressure. • Varying exchange bias achieved tunable linear range in spin valve.

  15. Spin valve effect in single-atom contacts

    International Nuclear Information System (INIS)

    Ziegler, M; Neel, N; Berndt, R; Lazo, C; Ferriani, P; Heinze, S; Kroeger, J

    2011-01-01

    Magnetic single-atom contacts have been controllably fabricated with a scanning tunnelling microscope. A voltage-dependent spin valve effect with conductance variations of ∼40% is reproducibly observed from contacts comprising a Cr-covered tip and Co and Cr atoms on ferromagnetic nanoscale islands on W(110) with opposite magnetization. The spin-dependent conductances are interpreted from first-principles calculations in terms of the orbital character of the relevant electronic states of the junction.

  16. High frequency spin torque oscillators with composite free layer spin valve

    International Nuclear Information System (INIS)

    Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

    2016-01-01

    We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

  17. High frequency spin torque oscillators with composite free layer spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

    2016-07-15

    We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

  18. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Mutch, Michael J. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lenahan, Patrick M. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2016-08-08

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  19. Investigation of ferromagnetic resonance and magnetoresistance in anti-spin ice structures

    Science.gov (United States)

    Ribeiro, I. R. B.; Felix, J. F.; Figueiredo, L. C.; Morais, P. C.; Ferreira, S. O.; Moura-Melo, W. A.; Pereira, A. R.; Quindeau, A.; de Araujo, C. I. L.

    2016-11-01

    In this work, we report experimental and theoretical investigations performed in anti-spin ice structures, composed by square lattice of elongated antidots, patterned in nickel thin film. The magnetic vortex crystal state was obtained by micromagnetic simulation as the ground state magnetization, which arises due to the magnetic stray field at the antidot edges inducing chirality in the magnetization of platters among antidots. Ferromagnetic resonance (FMR) and magnetoresistance (MR) measurements were utilized to investigate the vortex crystal magnetization dynamics and magnetoelectric response. By using FMR, it was possible to detect the spin wave modes and vortex crystal resonance, in good agreement with dynamic micromagnetic simulation results. The vortex crystal magnetization configuration and its response to the external magnetic field, were used to explain the isotropic MR behaviour observed.

  20. Magnon detection using a ferroic collinear multilayer spin valve.

    Science.gov (United States)

    Cramer, Joel; Fuhrmann, Felix; Ritzmann, Ulrike; Gall, Vanessa; Niizeki, Tomohiko; Ramos, Rafael; Qiu, Zhiyong; Hou, Dazhi; Kikkawa, Takashi; Sinova, Jairo; Nowak, Ulrich; Saitoh, Eiji; Kläui, Mathias

    2018-03-14

    Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y 3 Fe 5 O 12 |CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y 3 Fe 5 O 12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

  1. Thermal stability of low dose Ga+ ion irradiated spin valves

    International Nuclear Information System (INIS)

    Qi Xianjin; Wang Yingang; Zhou Guanghong; Li Ziquan

    2009-01-01

    The thermal stability of low dose Ga + ion irradiated spin valves has been investigated and compared with that of the as-prepared ones. The dependences of exchange field, measured using vibrating sample magnetometer at room temperature, on magnetic field sweep rate and time spent at negative saturation of the pinned ferromagnetic layer, and training effect were explored. The training effect is observed on both the irradiated spin valves and the as-prepared ones. The magnetic field sweep rate dependence of the exchange bias field of the irradiated spin valves is nearly the same as that of the as-prepared ones. For the as-prepared structure thermal activation has been observed, which showed that holding the irradiated structure at negative saturation of the pinned ferromagnetic layer for up to 28 hours results in no change in the exchange field. The results indicate that the thermal stability of the ion irradiated spin valves is the same as or even better than the as-prepared ones.

  2. Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

    NARCIS (Netherlands)

    Dejene, F. K.; Flipse, J.; van Wees, B. J.

    2012-01-01

    We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

  3. Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

    Science.gov (United States)

    Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

    2015-03-01

    We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

  4. Interfacial spectroscopic characterization of organic/ferromagnet hetero-junction of 3,4,9,10-perylene-teracarboxylic dianhydride-based organic spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Jhen-Yong; Ou Yang, Kui-Hon; Li, Kai-Shin [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Wang, Bo-Yao [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Shiu, Hung-Wei; Chen, Chia-Hao; Chan, Yuet-Loy; Wei, Der-Hsin; Chang, Fan-Hsiu; Lin, Hong-Ji [National Synchrotron Radiation Research Center, 30076 Hsinchu, Taiwan (China); Chiang, Wen-Chung, E-mail: wchiang@faculty.pccu.edu.tw [Department of Physics, Chinese Culture University, 11114 Taipei, Taiwan (China); Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China)

    2014-02-24

    We report interfacial characterization of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA)-based organic spin valves (OSV) dusted with a thin layer of partially oxidized alumina at the organic semiconductor (OSC)/ferromagnet (FM) interfaces. Up to 13.5% magnetoresistance is achieved at room temperature. X-ray photoelectron spectroscopy measurements reveal interfacial electronic interaction between PTCDA and FM while the application of a thin alumina layer at the PTCDA/FM interfaces prevents the electronic hybridization and effectively preserves the spin injection into the OSC spacer. This finding demonstrates the critical effect of interfacial structure on magnetotransport behavior in OSV.

  5. Evolution of the spin hall magnetoresistance in Cr2O3/Pt bilayers close to the Néel temperature

    Science.gov (United States)

    Schlitz, Richard; Kosub, Tobias; Thomas, Andy; Fabretti, Savio; Nielsch, Kornelius; Makarov, Denys; Goennenwein, Sebastian T. B.

    2018-03-01

    We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and antiferromagnet Cr2O3 with its easy axis out of the plane. We vary the temperature from 20 °C to 60 °C, in the vicinity of the Néel temperature of Cr2O3 of approximately 37 °C. The magnetoresistive response is recorded during rotations of the external magnetic field in three mutually orthogonal planes. A large magnetoresistance having a symmetry consistent with a positive spin Hall magnetoresistance is observed in the paramagnetic phase of Cr2O3, which however vanishes when cooling to below the Néel temperature. Compared to analogous experiments in a Gd3Ga5O12/Pt bilayer, we conclude that a paramagnetic moment in the insulator induced by an applied magnetic field is not sufficient to explain the observed magnetoresistance. We speculate that the type of magnetic moment at the interface qualitatively impacts the spin angular momentum transfer, with the 3d moments of Cr sinking angular momentum much more efficiently as compared to the more localized 4f moments of Gd.

  6. Spin-resolved electron waiting times in a quantum-dot spin valve

    Science.gov (United States)

    Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

    2018-04-01

    We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

  7. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    International Nuclear Information System (INIS)

    Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-01-01

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

  8. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-01-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

  9. Anisotropic magnetoresistance of spin-orbit coupledcarriers scattered from polarized magnetic impurities

    Czech Academy of Sciences Publication Activity Database

    Trushin, M.; Výborný, Karel; Moraczewski, P.; Kovalev, A.A.; Schliemann, J.; Jungwirth, Tomáš

    2009-01-01

    Roč. 80, č. 13 (2009), 134405/1-134405/14 ISSN 1098-0121 R&D Projects: GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : Boltzmann equation * conduction bands * enhanced magnetoresistance * Fermi surface * ferromagnetic materials * gallium compounds * III-V semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.80.134405

  10. Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

    Science.gov (United States)

    Batley, J. T.; Rosaond, M. C.; Ali, M.; Linfield, E. H.; Burnell, G.; Hickey, B. J.

    Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to govern spin-relaxation and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. However, in lateral spin valves, measurements have found that at low temperatures the spin diffusion length unexpectedly decreases. We have fabricated lateral spin valves from Cu with different concentrations of magnetic impurities. Through temperature dependent charge and spin transport measurements we present clear evidence linking the presence of the Kondo effect within Cu to the suppression of the spin diffusion length below 30 K. We have calculated the spin-relaxation rate and isolated the contribution from magnetic impurities. At very low temperatures electron-electron interactions play a more prominent role in the Kondo effect. Well below the Kondo temperature a strong-coupling regime exists, where the moments become screened and the magnetic dephasing rate is reduced. We also investigate the effect of this low temperature regime (>1 K) on a pure spin current. This work shows the dominant role of Kondo scattering, even in low concentrations of order 1 ppm, within pure spin transport.

  11. Superconducting spin valve effect in Fe/In based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Leksin, Pavel; Schumann, Joachim; Kataev, Vladislav; Schmidt, Oliver; Buechner, Bernd [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Garifyanov, Nadir; Garifullin, Ilgiz [Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences (Russian Federation)

    2015-07-01

    We report on magnetic and superconducting properties of the spin-valve multilayer system CoOx/Fe1/Cu/Fe2/In. The Superconducting Spin Valve Effect (SSVE) assumes the T{sub c} difference between parallel (P) and antiparallel (AP) orientations of the Fe1 and Fe2 layers' magnetizations. The SSVE value oscillates and changes its sign when the Fe2 layer thickness d{sub Fe2} is varied from 0 to 5 nm. The SSVE value is positive, as expected, in the range 0.4 nm ≤ d{sub Fe2} ≤ 0.8 nm. For a rather broad range of thicknesses 1 nm ≤ d{sub Fe2} ≤ 2.6 nm the SSVE has negative sign assuming the inverse SSVE. Moreover, the magnitude of the inverse effect is larger than that of the positive direct effect. We attribute these oscillations to a quantum interference of the cooper pair wave functions in the magnetic part of the system. For most of the spin-valve samples from this set we experimentally realized the full switching between normal and superconducting states due to direct and inverse SSVE. The analysis of the experimental data has enabled the determination of all microscopic parameters of the studied system.

  12. MnNi-based spin valve sensors combining high thermal stability, small footprint and pTesla detectivities

    Science.gov (United States)

    Silva, Marília; Leitao, Diana C.; Cardoso, Susana; Freitas, Paulo

    2018-05-01

    Magnetoresistive sensors with high thermal robustness, low noise and high spatial resolution are the answer to a number of challenging applications. Spin valve sensors including MnNi as antiferromagnet layer provide higher exchange bias field and improved thermal stability. In this work, the influence of the buffer layer type (Ta, NiFeCr) and thickness on key sensor parameters (e.g. offset field, Hf) is investigated. A Ta buffer layer promotes a strong (111) texture which leads to a higher value of MR. In contrast, Hf is lower for NiFeCr buffer. Micrometric sensors display thermal noise levels of 1 nT/Hz1/2 and 571 pT/Hz1/2 for a sensor height (h) of 2 and 4 μm, respectively. The temperature dependence of MR and sensitivity is also addressed and compared with MnIr based spin valves. In this case, MR abruptly decreases after heating at 160°C (without magnetic field), contrary to MnNi-based spin valves, where only a 10% MR decrease (relative to the initial value) is seen at 275°C. Finally, to further decrease the noise levels and improve detectivity, MnNi spin-valves are deposited vertically, and connected in parallel and series (in-plane) to create a device with low resistance and high sensitivity. A field detection at thermal level of 346 pT/Hz1/2 is achieved for a device with a total of 300 SVs (4 vertical, 15 in series, 5 in parallel).

  13. Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

    Science.gov (United States)

    Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong; Jo, Younghun; Park, Byong-Guk

    2015-01-01

    The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques. PMID:26423608

  14. Spin injection and detection in lateral spin valves with hybrid interfaces

    Science.gov (United States)

    Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

    2018-06-01

    Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

  15. Spin Hall magnetoresistance at the interface between platinum and cobalt ferrite thin films with large magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    Takeshi Tainosho

    2017-05-01

    Full Text Available The recently discovered spin Hall magnetoresistance (SMR effect is a useful means to obtain information on the magnetization process at the interface between a nonmagnetic metal and ferromagnetic insulators. We report the SMR measurements at the interface between platinum and cobalt ferrite thin films for samples with two different preferential directions of magnetization (out-of-plane and in-plane. The directional difference of the magnetic easy axis does not seem to influence the value of SMR.

  16. The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

    Energy Technology Data Exchange (ETDEWEB)

    Ziętek, Sławomir, E-mail: zietek@agh.edu.pl; Skowroński, Witold; Wiśniowski, Piotr; Czapkiewicz, Maciej; Stobiecki, Tomasz [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Ogrodnik, Piotr [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa (Poland); Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Barnaś, Józef [Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)

    2015-09-21

    Spin diode effect in a giant magnetoresistive strip is measured in a broad frequency range, including resonance and off-resonance frequencies. The off-resonance dc signal is relatively strong and also significantly dependent on the exchange coupling between magnetic films through the spacer layer. The measured dc signal is described theoretically by taking into account magnetic dynamics induced by Oersted field created by an ac current flowing through the system.

  17. Magnetoresistive logic and biochip

    International Nuclear Information System (INIS)

    Brueckl, Hubert; Brzeska, Monika; Brinkmann, Dirk; Schotter, J.Joerg; Reiss, Guenter; Schepper, Willi; Kamp, P.-B.; Becker, Anke

    2004-01-01

    While some magnetoresistive devices based on giant magnetoresistance or spin-dependent tunneling are already commercialized, a new branch of development is evolving towards magnetoresistive logic with magnetic tunnel junctions. Furthermore, the new magnetoelectronic effects show promising properties in magnetoresistive biochips, which are capable of detecting even single molecules (e.g. DNA) by functionalized magnetic markers. The unclear limits of this approach are discussed with two model systems

  18. The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

    2017-01-01

    Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

  19. Vortex Flipping in Superconductor-Ferromagnet Spin Valve Structures

    Science.gov (United States)

    Patino, Edgar J.; Aprili, Marco; Blamire, Mark; Maeno, Yoshiteru

    2014-03-01

    We report in plane magnetization measurements on Ni/Nb/Ni/CoO and Co/Nb/Co/CoO spin valve structures with one of the ferromagnetic layers pinned by an antiferromagnetic layer. In samples with Ni, below the superconducting transition Tc, our results show strong evidence of vortex flipping driven by the ferromagnets magnetization. This is a direct consequence of proximity effect that leads to vortex supercurrents leakage into the ferromagnets. Here the polarized electron spins are subject to vortices magnetic field occasioning vortex flipping. Such novel mechanism has been made possible for the first time by fabrication of the F/S/F/AF multilayered spin valves with a thin-enough S layer to barely confine vortices inside as well as thin-enough F layers to align and control the magnetization within the plane. When Co is used there is no observation of vortex flipping effect. This is attributed to Co shorter coherence length. Interestingly instead a reduction in pinning field of about 400 Oe is observed when the Nb layer is in superconducting state. This effect cannot be explained in terms of vortex fields. In view of these facts any explanation must be directly related to proximity effect and thus a remarkable phenomenon that deserves further investigation. Programa Nacional de Ciencias Basicas COLCIENCIAS (No. 120452128168).

  20. A High-Spin Rate Measurement Method for Projectiles Using a Magnetoresistive Sensor Based on Time-Frequency Domain Analysis.

    Science.gov (United States)

    Shang, Jianyu; Deng, Zhihong; Fu, Mengyin; Wang, Shunting

    2016-06-16

    Traditional artillery guidance can significantly improve the attack accuracy and overall combat efficiency of projectiles, which makes it more adaptable to the information warfare of the future. Obviously, the accurate measurement of artillery spin rate, which has long been regarded as a daunting task, is the basis of precise guidance and control. Magnetoresistive (MR) sensors can be applied to spin rate measurement, especially in the high-spin and high-g projectile launch environment. In this paper, based on the theory of a MR sensor measuring spin rate, the mathematical relationship model between the frequency of MR sensor output and projectile spin rate was established through a fundamental derivation. By analyzing the characteristics of MR sensor output whose frequency varies with time, this paper proposed the Chirp z-Transform (CZT) time-frequency (TF) domain analysis method based on the rolling window of a Blackman window function (BCZT) which can accurately extract the projectile spin rate. To put it into practice, BCZT was applied to measure the spin rate of 155 mm artillery projectile. After extracting the spin rate, the impact that launch rotational angular velocity and aspect angle have on the extraction accuracy of the spin rate was analyzed. Simulation results show that the BCZT TF domain analysis method can effectively and accurately measure the projectile spin rate, especially in a high-spin and high-g projectile launch environment.

  1. Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

    Science.gov (United States)

    Katti, R. R.; Zou, D.; Reed, D.; Schipper, D.; Hynes, O.; Shaw, G.; Kaakani, H.

    2003-05-01

    Prior work has shown that current-in-plane (CIP) giant magnetoresistive (GMR) pseudo-spin-valve (PSV) devices grown on bulk Si wafers and bulk complementary metal-oxide semiconductor (CMOS) underlayers exhibit write and read characteristics that are suitable for application as nonvolatile memory devices. In this work, CIP GMR PSV devices fabricated on silicon-on-insulator CMOS underlayers are shown to support write and read performance. Reading and writing fields for selected devices are shown to be approximately 25%-50% that of unselected devices, which provides a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits. The switching characteristics of experimental devices were compared to and found to be similar with Landau-Lifschitz-Gilbert micromagnetic modeling results, which allowed inferring regions of reversible and irreversible rotations in magnetic reversal processes.

  2. Thermal spin filtering effect and giant magnetoresistance of half-metallic graphene nanoribbon co-doped with non-metallic Nitrogen and Boron

    Science.gov (United States)

    Huang, Hai; Zheng, Anmin; Gao, Guoying; Yao, Kailun

    2018-03-01

    Ab initio calculations based on density functional theory and non-equilibrium Green's function are performed to investigate the thermal spin transport properties of single-hydrogen-saturated zigzag graphene nanoribbon co-doped with non-metallic Nitrogen and Boron in parallel and anti-parallel spin configurations. The results show that the doped graphene nanoribbon is a full half-metal. The two-probe system based on the doped graphene nanoribbon exhibits various excellent spin transport properties, including the spin-filtering effect, the spin Seebeck effect, the single-spin negative differential thermal resistance effect and the sign-reversible giant magnetoresistance feature. Excellently, the spin-filtering efficiency can reach nearly 100% in the parallel configuration and the magnetoresistance ratio can be up to -1.5 × 1010% by modulating the electrode temperature and temperature gradient. Our findings indicate that the metal-free doped graphene nanoribbon would be a promising candidate for spin caloritronic applications.

  3. Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

    Science.gov (United States)

    Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

    2018-01-01

    Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

  4. Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.

    Science.gov (United States)

    Bodnar, S Yu; Šmejkal, L; Turek, I; Jungwirth, T; Gomonay, O; Sinova, J; Sapozhnik, A A; Elmers, H-J; Kläui, M; Jourdan, M

    2018-01-24

    Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn 2 Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn 2 Au(001) thin films were generated by pulse current densities of ≃10 7  A/cm 2 . The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.

  5. Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

    International Nuclear Information System (INIS)

    Shang, T.; Zhan, Q. F.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Li, Run-Wei; Wu, Y. H.; Zhang, S.

    2016-01-01

    We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y_3Fe_5O_1_2 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.

  6. Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature.

    Science.gov (United States)

    Dong, Bo-Wen; Cramer, Joel; Ganzhorn, Kathrin; Yuan, H Y; Guo, Er-Jia; Goennenwein, Sebastian T B; Kläui, Mathias

    2018-01-24

    We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usual [Formula: see text] relation well established in the collinear magnet yttrium iron garnet, with [Formula: see text] the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex angular dependence with four maxima are observed within one sweep cycle. The number of maxima as well as the relative strength of different maxima depend strongly on temperature and field strength. Our results evidence a complex SMR behavior in the non-collinear magnetic regime that goes beyond the conventional formalism developed for collinear magnetic structures.

  7. Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

    Energy Technology Data Exchange (ETDEWEB)

    Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

    2012-01-01

    New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light

  8. Effective suppression of thermoelectric voltage in nonlocal spin-valve measurement

    Science.gov (United States)

    Ariki, Taisei; Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi

    2017-06-01

    We demonstrate that the background signal in the nonlocal spin-valve measurement can be sufficiently suppressed by optimizing the electrode design of the lateral spin valve. A relatively long length scale of heat propagation produces spin-independent thermoelectric signals under the combination of the Peltier and Seebeck effects. These unfavorable signals can be reduced by mixing the Peltier effects in two transparent ferromagnetic/nonmagnetic junctions. Proper understanding of the contribution from the heat current in no spin-current area is a key for effective reduction of the spin-independent background signal.

  9. Superconducting spin valves controlled by spiral re-orientation in B20-family magnets

    Science.gov (United States)

    Pugach, N. G.; Safonchik, M.; Champel, T.; Zhitomirsky, M. E.; Lähderanta, E.; Eschrig, M.; Lacroix, C.

    2017-10-01

    We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few equivalent preferred directions under the control of a weak external magnetic field. Re-orienting the spiral direction allows one to controllably modify long-range spin-triplet superconducting correlations, leading to spin-valve switching behavior. Our results indicate that the spin-valve effect may be noticeable. This bilayer may be used as a magnetic memory element for cryogenic nanoelectronics. It has the following advantages in comparison to superconducting spin valves proposed previously: (i) it contains only one magnetic layer, which may be more easily fabricated and controlled; (ii) its ground states are separated by a potential barrier, which solves the "half-select" problem of the addressed switch of memory elements.

  10. Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at the LaAlO3/SrTiO3 Interface.

    Science.gov (United States)

    Diez, M; Monteiro, A M R V L; Mattoni, G; Cobanera, E; Hyart, T; Mulazimoglu, E; Bovenzi, N; Beenakker, C W J; Caviglia, A D

    2015-07-03

    The LaAlO3/SrTiO3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K range--indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

  11. Aging effect of spin accumulation in non-local spin valves

    International Nuclear Information System (INIS)

    Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng; Wang, Le; Xu, Xiaoguang; Jiang, Yong

    2017-01-01

    Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

  12. Aging effect of spin accumulation in non-local spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Wang, Le, E-mail: wangle@ruc.edu.cn [Department of Physics, Renmin University of China, Beijing 100872 (China); Xu, Xiaoguang, E-mail: xgxu@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Jiang, Yong [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2017-06-15

    Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

  13. Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes.

    Science.gov (United States)

    Rotjanapittayakul, Worasak; Pijitrojana, Wanchai; Archer, Thomas; Sanvito, Stefano; Prasongkit, Jariyanee

    2018-03-19

    Recently magnetic tunnel junctions using two-dimensional MoS 2 as nonmagnetic spacer have been fabricated, although their magnetoresistance has been reported to be quite low. This may be attributed to the use of permalloy electrodes, injecting current with a relatively small spin polarization. Here we evaluate the performance of MoS 2 -based tunnel junctions using Fe 3 Si Heusler alloy electrodes. Density functional theory and the non-equilibrium Green's function method are used to investigate the spin injection efficiency (SIE) and the magnetoresistance (MR) ratio as a function of the MoS 2 thickness. We find a maximum MR of ~300% with a SIE of about 80% for spacers comprising between 3 and 5 MoS 2 monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.

  14. Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

    Directory of Open Access Journals (Sweden)

    Walid Amamou

    2016-03-01

    Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

  15. Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

    International Nuclear Information System (INIS)

    Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

    2014-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

  16. Current-induced magnetization changes in a spin valve due to incoherent emission of non-equilibrium magnons

    OpenAIRE

    Kozub, V. I.; Caro, J.

    2004-01-01

    We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission by electrons. Our approach is based on the rate equation for the magnon occupation, using Fermi's golden rule for magnon emission and absorption and the non-equilibrium electron distribution for a biased spin valve. The magnon emission reduces the magnetizat...

  17. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed; Khan, Mohammed Zahed Mustafa; Cardoso, Susana; Leitao, Diana; Kosel, Jü rgen

    2016-01-01

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  18. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed

    2016-05-07

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  19. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    Directory of Open Access Journals (Sweden)

    Ahmed Alfadhel

    2016-05-01

    Full Text Available A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS, is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  20. The multi-step tunneling analogue of conductivity mismatch in organic spin valves

    NARCIS (Netherlands)

    Tran, T. Lan Ahn; Le, T.Q.; Sanderink, Johannes G.M.; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    Carbon-based, molecular semiconductors offer several attractive attributes for spintronics, such as exceptionally weak spin-orbit coupling and compatibility with bottom-up nanofabrication. In spite of the promising properties of organic spin valves, however, the physical mechanisms governing

  1. Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd3

    Science.gov (United States)

    Pandey, Abhishek; Mazumdar, Chandan; Ranganathan, R.; Johnston, D. C.

    2017-01-01

    Studies on the phenomenon of magnetoresistance (MR) have produced intriguing and application-oriented outcomes for decades–colossal MR, giant MR and recently discovered extremely large MR of millions of percents in semimetals can be taken as examples. We report here the discovery of novel multiple sign changes versus applied magnetic field of the MR in the cubic intermetallic compound GdPd3. Our study shows that a very strong correlation between magnetic, electrical and magnetotransport properties is present in this compound. The magnetic structure in GdPd3 is highly fragile since applied magnetic fields of moderate strength significantly alter the spin arrangement within the system–a behavior that manifests itself in the oscillating MR. Intriguing magnetotransport characteristics of GdPd3 are appealing for field-sensitive device applications, especially if the MR oscillation could materialize at higher temperature by manipulating the magnetic interaction through perturbations caused by chemical substitutions. PMID:28211520

  2. Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

    Science.gov (United States)

    Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

    2018-03-01

    Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

  3. Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

    Science.gov (United States)

    Majidi, Leyla; Asgari, Reza

    2014-10-01

    We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley- and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley- and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β ) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures, whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h ) in F region displays a maximum value at h <λ , which moves towards larger exchange fields by increasing the temperature.

  4. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  5. The effect of electrodes on 11 acene molecular spin valve: Semi-empirical study

    Science.gov (United States)

    Aadhityan, A.; Preferencial Kala, C.; John Thiruvadigal, D.

    2017-10-01

    A new revolution in electronics is molecular spintronics, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. The key point is the creation of molecular spin valve which consists of a diamagnetic molecule in between two magnetic leads. In this paper, non-equilibrium Green's function (NEGF) combined with Extended Huckel Theory (EHT); a semi-empirical approach is used to analyse the electron transport characteristics of 11 acene molecular spin valve. We examine the spin-dependence transport on 11 acene molecular junction with various semi-infinite electrodes as Iron, Cobalt and Nickel. To analyse the spin-dependence transport properties the left and right electrodes are joined to the central region in parallel and anti-parallel configurations. We computed spin polarised device density of states, projected device density of states of carbon and the electrode element, and transmission of these devices. The results demonstrate that the effect of electrodes modifying the spin-dependence behaviours of these systems in a controlled way. In Parallel and anti-parallel configuration the separation of spin up and spin down is lager in the case of iron electrode than nickel and cobalt electrodes. It shows that iron is the best electrode for 11 acene spin valve device. Our theoretical results are reasonably impressive and trigger our motivation for comprehending the transport properties of these molecular-sized contacts.

  6. Superconducting spin switch with infinite magnetoresistance induced by an internal exchange field.

    Science.gov (United States)

    Li, Bin; Roschewsky, Niklas; Assaf, Badih A; Eich, Marius; Epstein-Martin, Marguerite; Heiman, Don; Münzenberg, Markus; Moodera, Jagadeesh S

    2013-03-01

    A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al(2)O(3) barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena.

  7. Reduction of shunt current in buffer-free IrMn based spin-valve structures

    Science.gov (United States)

    Kocaman, B.; Akdoğan, N.

    2018-06-01

    The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6 nm in order to achieve the lowest shunt current and high blocking temperature (>300 K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.

  8. Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

    Science.gov (United States)

    Jang, Hyuk-Jae; Richter, Curt A

    2017-01-01

    Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

    Science.gov (United States)

    Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

    2011-03-28

    Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:

  10. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

    Directory of Open Access Journals (Sweden)

    Ma Jing-Min

    2011-01-01

    Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:

  11. Current-induced magnetic switching of a single molecule magnet on a spin valve

    International Nuclear Information System (INIS)

    Zhang, Xiao; Wang, Zheng-Chuan; Zheng, Qing-Rong; Zhu, Zheng-Gang; Su, Gang

    2015-01-01

    The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs

  12. Current-induced magnetic switching of a single molecule magnet on a spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiao [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Zheng-Chuan, E-mail: wangzc@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zheng, Qing-Rong [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zhu, Zheng-Gang [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); School of Electronics, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China); Su, Gang, E-mail: gsu@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China)

    2015-04-17

    The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs.

  13. Interplay of Peltier and Seebeck Effects in Nanoscale Nonlocal Spin Valves

    NARCIS (Netherlands)

    Bakker, F. L.; Slachter, A.; Adam, J-P; van Wees, B. J.

    2010-01-01

    We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second, and third

  14. Percolative Theory of Organic Magnetoresistance and Fringe-Field Magnetoresistance

    Science.gov (United States)

    Flatté, Michael E.

    2013-03-01

    A recently-introduced percolation theory for spin transport and magnetoresistance in organic semiconductors describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Increases in the spin-flip rate open up ``spin-blocked'' pathways to become viable conduction channels and hence, as the spin-flip rate changes with magnetic field, produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with measurements of the shape and saturation of measured magnetoresistance curves. We find that the threshold hopping distance is analogous to the branching parameter of a phenomenological two-site model, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance. Regimes of slow and fast hopping magnetoresistance are uniquely characterized by their line shapes. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory. Extensions to this theory also describe fringe-field magnetoresistance, which is the influence of fringe magnetic fields from a nearby unsaturated magnetic electrode on the conductance of an organic film. This theory agrees with several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect. All work done in collaboration with N. J. Harmon, and fringe-field magnetoresistance work in collaboration also with F. Macià, F. Wang, M. Wohlgenannt and A. D. Kent. This work was supported by an ARO MURI.

  15. PREFACE: Spin Electronics

    Science.gov (United States)

    Dieny, B.; Sousa, R.; Prejbeanu, L.

    2007-04-01

    Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

  16. Effect of spin fluctuations in magnetocaloric and magnetoresistance properties of Dy10Co20Si70 alloy

    Science.gov (United States)

    Rashid, T. P.; Arun, K.; Curlik, Ivan; Ilkovic, Sergej; Reiffers, Marian; Dzubinska, Andrea; Nagalakshmi, R.

    2017-09-01

    Systematic investigations on the structure, magnetic, thermodynamic, magnetocaloric and magnetoresistance (MR) properties of the arc melted Dy10Co20Si70 alloy are presented. The Dy10Co20Si70 alloy crystallizes in tetragonal BaNiSn3-type DyCoSi3 (space group = I4mm; No. 107) as a major phase and CaF2-type CoSi2 (space group = Fm-3m; No. 225) and C-type Si (space group = Fd-3m; No. 227) as minor phases. The title compound exhibits multiple magnetic transitions having antiferromagnetic ordering at temperatures, viz., T1 = 10.8 K, T2 = 8.8 K and T3 = 3.3 K. The magnetic and thermodynamic studies confirm these magnetic anomalies in the compound. The large value of maximum magnetic entropy change, -ΔSMM a x = 16.4 and 26.6 J/kg K for the field change ΔH of 50 and 90 kOe, respectively, observed in the compound is associated with field induced magnetic transitions. Asymmetric broadening of the magnetic entropy change peaks above the ordering temperatures resulting in significant refrigerant capacities of 361 and 868 J/kg for ΔH = 50 and 90 kOe, respectively, in the compound is due to the spin fluctuation effect. The sign reversal in MR measurements is attributed to the field induced antiferromagnetic to ferromagnetic transition. A large positive MR (42% in 90 kOe) is observed at 2 K. The H2 dependence of both the magnetocaloric effect (MCE) and MR in the paramagnetic regime indicates the role of the applied magnetic field in suppressing the spin fluctuations. The large MCE and MR together with no thermal or magnetic hysteresis establish this new compound as an attractive multifunctional magnetic material.

  17. Observation of spin-polarized electron transport in Alq3 by using a low work function metal

    Science.gov (United States)

    Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

    2012-09-01

    We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

  18. Chemical properties and GMR improvement of specular spin valves with nano-oxide layers, formed in ambient mixed gases

    International Nuclear Information System (INIS)

    Quang, H D; Hien, N T; Oh, S K; Sinh, N H; Yu, S C

    2004-01-01

    Specular spin valves (SVs) containing nano-oxide layers (NOLs) structured as substrate/seed/AF/P 1 /NOL/P 2 /Cu/F/NOL, have been fabricated. The NOLs were formed by natural oxidation in different ambient atmospheres of pure oxygen, oxygen/nitrogen and oxygen/argon gas mixtures. The fabrication conditions were optimized to enhance the magnetoresistance (MR) ratio, to suppress the interlayer coupling fields (H f ) between the free and pinned layers, to suppress the high interface density of the NOL, to ease the control of the NOL thickness and to form a smooth NOL/P 2 interface for promoting specular electron scattering. The characteristics of our specular SVs are the MR ratio of 14.1%, the exchange bias field of 44-45 mT, and H f weaker than 1.0 mT. The optimal conditions for oxidation time, total oxidation pressure and the annealing temperature were found to be 300 s, 0.14 Pa (oxygen/argon = 80/20) and 250 deg. C, respectively. Also, the origin of thermal stability of MMn-based (M = Fe, Pt, Ir, etc) specular SVs has been explained in detail by chemical properties of NOL using secondary-ion mass spectroscopy and x-ray photoelectron spectroscopy depth profile analyses. Thermal stability turns out to be caused by a decrease in MR ratios at high temperatures (>250 deg. C), which is a serious problem for device applications using the SV structure as a high density read head device

  19. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  20. On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

    Directory of Open Access Journals (Sweden)

    A.A. Baker

    Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

  1. Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers

    International Nuclear Information System (INIS)

    Steiner, Roland Johannes

    2006-01-01

    The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T c (H)- and the R(H)-curve. (orig.)

  2. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

    Science.gov (United States)

    Burton, J D; Tsymbal, E Y

    2011-04-15

    A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

  3. Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque.

    Science.gov (United States)

    Useinov, Arthur; Lin, Hsiu-Hau; Lai, Chih-Huang

    2017-08-21

    The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d av  tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (d av  ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer.

  4. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  5. Wheatstone bridge giant-magnetoresistance based cell counter.

    Science.gov (United States)

    Lee, Chiun-Peng; Lai, Mei-Feng; Huang, Hao-Ting; Lin, Chi-Wen; Wei, Zung-Hang

    2014-07-15

    A Wheatstone bridge giant magnetoresistance (GMR) biosensor was proposed here for the detection and counting of magnetic cells. The biosensor was made of a top-pinned spin-valve layer structure, and it was integrated with a microchannel possessing the function of hydrodynamic focusing that allowed the cells to flow in series one by one and ensured the accuracy of detection. Through measuring the magnetoresistance variation caused by the stray field of the magnetic cells that flowed through the microchannel above the GMR biosensor, we can not only detect and count the cells but we can also recognize cells with different magnetic moments. In addition, a magnetic field gradient was applied for the separation of different cells into different channels. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Photoemission microscopy study of picosecond magnetodynamics in spin-valve-type thin film elements

    International Nuclear Information System (INIS)

    Schneider, C.M.; Kaiser, A.; Wiemann, C.; Tieg, C.; Cramm, S.

    2010-01-01

    Exploring ultimate time scales of magnetic switching processes is an important issue in spin electronics. In spin valves or magnetic tunnelling junctions magnetic anisotropies and coupling phenomena alter the magnetodynamic response of the entire system. Understanding the role of these interactions is a key to the design of optimized devices. We have employed time-resolved X-ray photoemission microscopy to address the magnetodynamics in spin-valve-type model systems in the ns- and ps-regime. In Co/Cr/Fe(0 0 1) single crystal elements we find a strong influence of the magnetocrystalline anisotropy, which tends to suppress rotation processes. In addition, we observe a dynamic 'decoupling' of the layers. In low-anisotropy FeNi/Cr/FeCo trilayers, the interlayer coupling character determines the dynamic response. Particularly, rotational processes in the FeNi and FeCo layers are temporarily shifted to each other, which can be related to different coercivities of the individual layers. By contrast, the domain wall motion in both layers closely agrees, caused by an enhanced coupling due to the domain wall stray fields. Our examples demonstrate that the detailed magnetodynamics in coupled magnetic layers is quite complex and depends strongly on the timescale under consideration.

  7. Magnetic scanning gate microscopy of CoFeB lateral spin valve

    Directory of Open Access Journals (Sweden)

    Héctor Corte-León

    2017-05-01

    Full Text Available Devices comprised of CoFeB nanostructures with perpendicular magnetic anisotropy and non-magnetic Ta channel were operated in thermal lateral spin valve (LSV mode and studied by magnetotransport measurements and magnetic scanning gate microscopy (SGM. Due to the short spin diffusion length of Ta, the spin diffusion signal was suppressed, allowing the study of the contribution from the anomalous Nernst (ANE and anomalous Hall effects (AHE. The magnetotransport measurements identified the switching fields of the CoFeB nanostructures and demonstrated a combination of AHE and ANE when the devices were operated in thermally-driven spin-injection mode. Modified scanning probe microscopy probes were fabricated by placing a NdFeB magnetic bead (MB on the apex of a commercial Si probe. The dipole magnetic field distribution around the MB was characterized by using differential phase contrast technique and direct measurement of the switching field induced by the bead in the CoFeB nanodevices. Using SGM we demonstrate the influence of localized magnetic field on the CoFeB nanostructures near the non-magnetic channel. This approach provides a promising route towards the study of thermal and spin diffusion effects using local magnetic fields.

  8. Magnetic scanning gate microscopy of CoFeB lateral spin valve

    Science.gov (United States)

    Corte-León, Héctor; Scarioni, Alexander Fernandez; Mansell, Rhodri; Krzysteczko, Patryk; Cox, David; McGrouther, Damien; McVitie, Stephen; Cowburn, Russell; Schumacher, Hans W.; Antonov, Vladimir; Kazakova, Olga

    2017-05-01

    Devices comprised of CoFeB nanostructures with perpendicular magnetic anisotropy and non-magnetic Ta channel were operated in thermal lateral spin valve (LSV) mode and studied by magnetotransport measurements and magnetic scanning gate microscopy (SGM). Due to the short spin diffusion length of Ta, the spin diffusion signal was suppressed, allowing the study of the contribution from the anomalous Nernst (ANE) and anomalous Hall effects (AHE). The magnetotransport measurements identified the switching fields of the CoFeB nanostructures and demonstrated a combination of AHE and ANE when the devices were operated in thermally-driven spin-injection mode. Modified scanning probe microscopy probes were fabricated by placing a NdFeB magnetic bead (MB) on the apex of a commercial Si probe. The dipole magnetic field distribution around the MB was characterized by using differential phase contrast technique and direct measurement of the switching field induced by the bead in the CoFeB nanodevices. Using SGM we demonstrate the influence of localized magnetic field on the CoFeB nanostructures near the non-magnetic channel. This approach provides a promising route towards the study of thermal and spin diffusion effects using local magnetic fields.

  9. Microwave spectroscopy and electronic transport properties of ferromagnetic Josephson junctions and superconducting spin-valves

    Energy Technology Data Exchange (ETDEWEB)

    Thalmann, Marcel; Rudolf, Marcel; Pietsch, Torsten [Zukunftskolleg and Department of Physics, University of Konstanz, Universitaetsstrasse 10, 78464 Konstanz (Germany)

    2016-07-01

    Hybrid superconducting nanostructures recently attracted tremendous interest, due to their great potential in dissipation-less spin-electronics with unprecedented switching rates. The practical realisation of such devices, however, requires a complete understanding of the transfer and dynamics of spin- and charge currents between superconducting (S) and ferromagnetic (F) circuit elements, as well as the coupling between spin- and charge degrees of freedom in these systems. We investigate novel transport phenomena in superconductor-ferromagnet hybrid nanostructures under non-equilibrium conditions. Microwave spectroscopy is used to elucidate fundamental questions related to the complex interplay of competing order parameters and the question of relaxation mechanisms of non-equilibrium distributions with respect to spin, charge and energy. Recent experiments on two complimentary device structures are discussed: (I) in diffusive S/F/S Josephson junctions with non-sinusoidal current-phase relationship and (II) local and non-local transport measurements and microwave spectroscopy in F/S/F lateral spin-valves.

  10. Role of the antiferromagnetic pinning layer on spin wave properties in IrMn/NiFe based spin-valves

    Energy Technology Data Exchange (ETDEWEB)

    Gubbiotti, G., E-mail: gubbiotti@fisica.unipg.it; Tacchi, S. [Istituto Officina dei Materiali del CNR (IOM-CNR), Unità di Perugia, I-06123 Perugia (Italy); Del Bianco, L. [Department of Physics and Astronomy, University of Bologna, I-40127 Bologna (Italy); Department of Physics and Earth Sciences and CNISM, University of Ferrara, I-44122 Ferrara (Italy); Bonfiglioli, E.; Giovannini, L.; Spizzo, F.; Zivieri, R. [Department of Physics and Earth Sciences and CNISM, University of Ferrara, I-44122 Ferrara (Italy); Tamisari, M. [Department of Physics and Earth Sciences and CNISM, University of Ferrara, I-44122 Ferrara (Italy); Dipartimento di Fisica e Geologia, Università di Perugia, I-06123 Perugia (Italy)

    2015-05-07

    Brillouin light scattering (BLS) was exploited to study the spin wave properties of spin-valve (SV) type samples basically consisting of two 5 nm-thick NiFe layers (separated by a Cu spacer of 5 nm), differently biased through the interface exchange coupling with an antiferromagnetic IrMn layer. Three samples were investigated: a reference SV sample, without IrMn (reference); one sample with an IrMn underlayer (10 nm thick) coupled to the bottom NiFe film; one sample with IrMn underlayer and overlayer of different thickness (10 nm and 6 nm), coupled to the bottom and top NiFe film, respectively. The exchange coupling with the IrMn, causing the insurgence of the exchange bias effect, allowed the relative orientation of the NiFe magnetization vectors to be controlled by an external magnetic field, as assessed through hysteresis loop measurements by magneto-optic magnetometry. Thus, BLS spectra were acquired by sweeping the magnetic field so as to encompass both the parallel and antiparallel alignment of the NiFe layers. The BLS results, well reproduced by the presented theoretical model, clearly revealed the combined effects on the spin dynamic properties of the dipolar interaction between the two NiFe films and of the interface IrMn/NiFe exchange coupling.

  11. Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

    Science.gov (United States)

    Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

    2017-04-01

    Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

  12. Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

    Science.gov (United States)

    Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E; Hankiewicz, Ewelina M; Žutić, Igor

    2016-10-14

    We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

  13. Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

    Science.gov (United States)

    Sasaki, Taro; Endoh, Tetsuo

    2018-04-01

    In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T–1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10 ns writing period and 1.2 V V DD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (D MTJ) is scaled down from 55 to 15 nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.

  14. Colossal magnetoresistance

    International Nuclear Information System (INIS)

    Fontcuberta, J.

    1999-01-01

    In 1986 Alex Mueller and Georg Bednorz of IBM Zurich discovered high-temperature superconductivity in copper-based oxides. This finding, which was rewarded with the Nobel Prize for Physics in the following year, triggered intense research into the properties of the transition metal oxides. Since then scientists have questioned the very nature of the metallic state in these materials. A few years after the initial discovery, in 1993, more excitement greeted reports that certain manganese oxides showed a huge change in electrical resistivity when a magnetic field was applied. This effect is generally known as magnetoresistance, but the resistivity change observed in these oxides was so large that it could not be compared with any other forms of magnetoresistance. The effect observed in these materials the manganese perovskites was therefore dubbed ''colossal'' magnetoresistance to distinguish it from the giant magnetoresistance observed in magnetic multilayers. In this article the author explains why magnetoresistance is an expanding field of physics research. (UK)

  15. Anomalous superconducting spin-valve effect in NbN/FeN/Cu/FeN/FeMn multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Tae Jong; Kim, Dong Ho [Yeungnam University, Gyeongsan (Korea, Republic of)

    2017-09-15

    We have studied magnetic and transport properties of NbN/FeN/Cu/FeN/FeMn spin-valve structure. In-plane magnetic moment exhibited typical hysteresis loops of spin valves in the normal state of NbN film at 20 K. On the other hand, the magnetic hysteresis loop in the superconducting state exhibited more complex behavior in which exchange bias provided by antiferrmagnetic FeMn layer to adjacent FeN layer was disturbed by superconductivity. Because of this, the ideal superconducting spin-valve effect was not detected. Instead the stray field originated from unsaturated magnetic states dominated the transport properties of NbN/FeN/Cu/FeN/FeMn multilayer.

  16. Ferromagnetic resonance study of the half-Heusler alloy NiMnSb. The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Riegler, Andreas

    2011-11-25

    Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO)), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10{sup -3} range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron

  17. Steps toward an all-electric spin valve using side-gated quantum point contacts with lateral spin-orbit coupling

    Science.gov (United States)

    Bhandari, Nikhil; Dutta, Maitreya; Charles, James; Newrock, Richard S.; Cahay, Marc; Herbert, Stephen T.

    2013-03-01

    Spin-based electronics or ‘spintronics’ has been a topic of interest for over two decades. Electronic devices based on the manipulation of the electron spin are believed to offer the possibility of very small, non-volatile and ultrafast devices with very low power consumption. Since the proposal of a spin-field-effect transistor (SpinFET) by Datta and Das in 1990, many attempts have been made to achieve spin injection, detection and manipulation in semiconductor materials either by incorporating ferromagnetic materials into device architectures or by using external magnetic fields. This approach has significant design complexities, partly due to the influence of stray magnetic fields on device operation. In addition, magnetic electrodes can have magneto-resistance and spurious Hall voltages that can complicate device performance. To date, there has been no successful report of a working Datta-Das SpinFET. Over the last few years we have investigated an all-electric means of manipulating spins, one that only relies on electric fields and voltages and not on ferromagnetic materials or external magnetic fields. We believe we have found a pathway toward this goal, using in-plane side-gated quantum point contacts (QPCs) that rely on lateral spin-orbit coupling to create spin polarization. In this paper we discuss several aspects of our work, beginning with our finding what we believe is nearly complete spin-polarization in InAs QPCs by purely electrical means, our theoretical work to understand the basic mechanisms leading to that situation (asymmetric lateral confinement, lateral spin-orbit coupling and a strong e-e interaction), and our recent work extending the effort to GaAs and to dual QPC systems where one QPC acts as a polarizer and the other as an analyzer. Keynote talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

  18. Spin-motive Force Induced by Domain Wall Dynamics in the Antiferromagnetic Spin Valve

    Science.gov (United States)

    Sugano, Ryoko; Ichimura, Masahiko; Takahashi, Saburo; Maekawa, Sadamichi; Crest Collaboration

    2014-03-01

    In spite of no net magnetization in antiferromagnetic (AF) textures, the local magnetic properties (Neel magnetization) can be manipulated in a similar fashion to ferromagnetic (F) ones. It is expected that, even in AF metals, spin transfer torques (STTs) lead to the domain wall (DW) motion and that the DW motion induces spin-motive force (SMF). In order to study the Neel magnetization dynamics and the resultant SMF, we treat the nano-structured F1/AF/F2 junction. The F1 and F2 leads behave as a spin current injector and a detector, respectively. Each F lead is fixed in the different magnetization direction. Torsions (DW in AF) are introduced reflecting the fixed magnetization of two F leads. We simulated the STT-induced Neel magnetization dynamics with the injecting current from F1 to F2 and evaluate induced SMF. Based on the adiabatic electron dynamics in the AF texture, Langevin simulations are performed at finite temperature. This research was supported by JST, CREST, Japan.

  19. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    Energy Technology Data Exchange (ETDEWEB)

    Godel, F.; Doudin, B.; Henry, Y.; Halley, D., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Venkata Kamalakar, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

    2014-10-13

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  20. Spin-Valve Effect in a Ni-C60-Ni Device

    National Research Council Canada - National Science Library

    He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2006-01-01

    .... The magnitude of the junction magnetoresistance (JMR) is found to be significantly large for the device, which makes it a promising candidate for realistic applications in molecular spintronics...

  1. Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

    Science.gov (United States)

    Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

    2017-08-01

    Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

  2. Colossal Magnetoresistance Manganites and Related Prototype Devices

    OpenAIRE

    Liu, Yukuai; Yin, Yuewei; Li, Xiaoguang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO3 pn junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions ...

  3. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  4. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  5. Protecting nickel with graphene spin-filtering membranes: A single layer is enough

    Energy Technology Data Exchange (ETDEWEB)

    Martin, M.-B.; Dlubak, B.; Piquemal-Banci, M.; Collin, S.; Petroff, F.; Anane, A.; Fert, A.; Seneor, P. [Unité Mixte de Physique CNRS/Thales, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France and Université Paris Sud, 91405 Orsay (France); Weatherup, R. S.; Hofmann, S.; Robertson, J. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Yang, H. [IBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Blume, R. [Helmholtz-Zentrum Berlin fur Materialien und Energie, 12489 Berlin (Germany); Schloegl, R. [Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany)

    2015-07-06

    We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the sign reversal of the measured magnetoresistance.

  6. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

    Science.gov (United States)

    Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

    2017-06-27

    The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

  7. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  8. Recent results on the giant magnetoresistance in magnetic multilayers (anisotropy, thermal variation and CCP-GMR)

    Science.gov (United States)

    Dieny, B.; Granovsky, A.; Vedyaev, A.; Ryzhanova, N.; Cowache, C.; Pereira, L. G.

    1995-12-01

    We present some recent results obtained on the electrical transport properties in magnetic multilayers. Three points are addressed. The first one is an experimental demonstration of the existence of an intrinsic anisotropy of the giant magnetoresistance (GMR). The experiments have been carried out on spin-valve samples for which there is no contribution of the usual anisotropic magnetoresistance to the observed magnetoresistance. The GMR amplitude is found to be larger (lower) in the direction perpendicular (parallel) to the sensing current. The second point concerns a quantitative analysis of the thermal variation of the CIP (current-in-plane) GMR in magnetic multilayers. This analysis is based on a semi-classical theory including the spin-intermixing due to spin-flip scattering by magnons. This approach allows quantitatively evaluation of the respective weights of the various contributions to the thermal decrease in GMR: (i) scattering by magnons in the bulk of the ferromagnetic layers; (ii) phonon scattering in the non-magnetic spacer layer; and (iii) interfacial scattering by paramagnetic interfacial layers which may form as the temperature is increased. The third point is a theoretical investigation of the CPP (current perpendicular to the plane) electrical transport through an interface between two semi-infinite metallic materials. It is shown that when a potential step U exists at such an interface, this step gives rise to an interfacial resistance proportional to U2. It also leads to the existence of large oscillations in the electric fields on both sides of the interface.

  9. Nanostructures based on superconducting Nb and ferromagnetic CuNi alloy for elaboration of spin-valve core

    International Nuclear Information System (INIS)

    Morari, Roman

    2013-01-01

    The main goal of our research group is the elaboration of superconducting spin-switch (valve) based on Ferromagnetic/Superconductor/Ferromagnetic core. We could realize all building blocks necessary for the fabrication of the core structure of the superconducting spin valve, consisting of two mirror symmetric bilayers. In other words, the spin valve consists of a F/S * /F trilayer, which can be regarded as a package of a F/S and S/F bilayer so that S * =2S in the trilayer. For such a trilayer, the theory predicts that the critical temperature depends on the relative orientation of the magnetization of the ferromagnetic layers. To enable a reversal of one of the magnetizations of the layers with respect to the other by an external magnetic field, the coercive forces of the F layers have to be different due to either intrinsic properties or to an antiferromagnetic pinning layer delivering an exchange bias. The main points of our study are presented here. (author)

  10. Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Zdravkov, Vladimir I.; Kehrle, Jan; Obermeier, Guenther; Krug von Nidda, Hans-Albrecht; Mueller, Claus; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Sidorenko, Anatolie S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Tagirov, Lenar [Solid State Physics Department, Kazan Federal University (Russian Federation)

    2015-07-01

    We investigated the triplet spin-valve effect in nanoscale layered S/F{sub 1}/N/F{sub 2}/AF heterostructures with varying F{sub 1}-layer thickness (where S=Nb is a singlet superconducting, F{sub 1}=Cu{sub 41}Ni{sub 59} and F{sub 2}=Co a ferromagnetic, and N a normal-conducting, non-magnetic layer). The theory predicts a long-range, odd-in-frequency triplet component of superconductivity at non-collinear alignment of the magnetizations of F{sub 1} and F{sub 2}. This triplet component exhausts the singlet state and, thus, lowers the superconducting transition temperature, T{sub c}, yielding a global minimum of T{sub c} close to the perpendicular mutual orientations of the magnetizations. We found an oscillating decay of T{sub c} suppression, due to the generation of the triplet component, with increasing F{sub 1} layer thickness, which we discuss in the framework of recent theories.

  11. Investigations of the polymer/magnetic interface of organic spin-valves

    Energy Technology Data Exchange (ETDEWEB)

    Morley, N.A., E-mail: n.a.morley@sheffield.ac.uk [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Dost, R.; Lingam, A.S.V. [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Barlow, A.J. [National EPSRC XPS Users’ Service, School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

    2015-12-30

    Graphical abstract: - Highlights: • Metal carbide and sulphide species are detected at a polymer–magnetic interface. • Top magnetic electrodes on P3HT have uniaxial anisotropy. • Top magnetic electrodes on PBTTT are isotropic. - Abstract: This work investigates the top interface of an organic spin-valve, to determine the interactions between the polymer and top magnetic electrode. The polymers studied are regio-regular poly(3-hexylthiophene) (RR-P3HT) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (PBTTT) and the magnetic top electrodes are NiFe and Fe. X-ray photoelectron spectroscopy (XPS) is used to determine the bonding at the interface, along with the extent of how oxidised the magnetic layers are, while atomic force microscopy (AFM) is used to determine the surface roughness. A magneto-optic Kerr effect (MOKE) magnetometer is used to study the magnetic properties of the top electrode. It is shown that at the organic–magnetic interface the magnetic atoms interact with the polymer, as metallic–sulphide and metallic-carbide species are present at the interface. It is also shown that the structure of the polymer influences the anisotropy of the magnetic electrode, such that the magnetic electrodes grown on RR-P3HT have uniaxial anisotropy, while those grown on PBTTT are isotropic.

  12. Ordinary and triplet superconducting spin valve effect in Fe/Pb based systems

    Energy Technology Data Exchange (ETDEWEB)

    Leksin, Pavel; Schumann, Joachim; Krupskaya, Yulia; Kataev, Vladislav; Hess, Christian; Schmidt, Oliver; Buechner, Bernd [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Garifyanov, Nadir; Garifullin, Ilgiz [Zavoisky Physical-Technical Institute of RAS, Kazan (Russian Federation); Fominov, Yakov [L. D. Landau Institute for Theoretical Physics of RAS, Moscow (Russian Federation)

    2015-07-01

    We report on experimental evidence for the occurrence of the long range triplet correlations (LRTC) of the superconducting (SC) condensate in the spin-valve heterostructures CoO{sub x}/Fe1/Cu/Fe2/Pb. The LRTC generation in this layer sequence is accompanied by a T{sub c} suppression near the orthogonal mutual orientation of the Fe1 and Fe2 layers' magnetization. This T{sub c} drop reaches its maximum of 60mK at the Fe2 layer thickness d{sub Fe2} = 0.6 nm and falls down when d{sub Fe2} is increased. The modification of the Fe/Pb interface by using a thin Cu layer between Fe and Pb layers reduces the SC transition width without preventing the interaction between Pb and Fe2 layers. The dependence of the SSVE magnitude on Fe1 layer thickness d{sub Fe1} reveals maximum of the effect when d{sub Fe1} and d{sub Fe2} are equal and the d{sub Fe2} value is minimal. Using the optimal d{sub Fe1}, d{sub Fe2} and the intermediate Cu layer we realized almost full switching from normal to SC state due to SSVE.

  13. Giant Magnetoresistance in Carbon Nanotubes with Single-Molecule Magnets TbPc2.

    Science.gov (United States)

    Krainov, Igor V; Klier, Janina; Dmitriev, Alexander P; Klyatskaya, Svetlana; Ruben, Mario; Wernsdorfer, Wolfgang; Gornyi, Igor V

    2017-07-25

    We present experimental results and a theoretical model for the gate-controlled spin-valve effect in carbon nanotubes with side-attached single-molecule magnets TbPc 2 (Terbium(III) bis-phthalocyanine). These structures show a giant magnetoresistance up to 1000% in experiments on single-wall nanotubes that are tunnel-coupled to the leads. The proposed theoretical model combines the spin-dependent Fano effect with Coulomb blockade and predicts a spin-spin interaction between the TbPc 2 molecules, mediated by conducting electrons via the charging effect. This gate-tuned interaction is responsible for the stable magnetic ordering of the inner spins of the molecules in the absence of magnetic field. In the case of antiferromagnetic arrangement, electrons with either spin experience the scattering by the molecules, which results in blocking the linear transport. In strong magnetic fields, the Zeeman energy exceeds the effective antiferromagnetic coupling and one species of electrons is not scattered by molecules, which leads to a much lower total resistance at the resonant values of gate voltage, and hence to a supramolecular spin-valve effect.

  14. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

    Directory of Open Access Journals (Sweden)

    Sergio Iván Ravelo Arias

    2013-12-01

    Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function  is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  15. Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit2-based device with graphene nanoribbon electrodes

    Directory of Open Access Journals (Sweden)

    N. Liu

    2017-12-01

    Full Text Available We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC and the antiparallel configuration (APC. At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

  16. Spin injection and transport in semiconductor and metal nanostructures

    Science.gov (United States)

    Zhu, Lei

    In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

  17. High density submicron magnetoresistive random access memory (invited)

    Science.gov (United States)

    Tehrani, S.; Chen, E.; Durlam, M.; DeHerrera, M.; Slaughter, J. M.; Shi, J.; Kerszykowski, G.

    1999-04-01

    Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal-oxide-semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated.

  18. Magnetoresistances in Ni80Fe20-ITO granular film

    International Nuclear Information System (INIS)

    Gao Chunhong; Chen Ke; Yang Yanxia; Xiong Yuanqiang; Chen Peng

    2012-01-01

    Highlights: ► Magnetoresistance (MR) in Ni 80 Fe 20 -ITO granular film are investigated. ► MR is positive at high temperature, and is negative at low temperature. ► MR results from the competition among three mechanisms. - Abstract: The magnetic properties, electrical properties and magnetoresistance are investigated in Ni 80 Fe 20 -ITO granular film with various volume fractions V NF of Ni 80 Fe 20 . The room temperature magnetization hysteresis of sample with V NF = 25% shows superparamagnetic behavior. Current-voltage curve of sample with V NF = 25% at 175 K shows typical tunneling-type behavior. The magnetoresistances of samples with low V NF are positive at high temperature, and are negative at low temperature. The temperature-dependent magnetoresistances result from the competition among ordinary magnetoresistances, the granular-typed tunneling magnetoresistance and the spin-mixing induced magnetoresistances.

  19. Effect of resistance feedback on spin torque-induced switching of nanomagnets

    International Nuclear Information System (INIS)

    Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

    2009-01-01

    In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

  20. Giant magnetoresistance in CrFeMn alloys

    International Nuclear Information System (INIS)

    Xu, W.M.; Zheng, P.; Chen, Z.J.

    1997-01-01

    The electrical resistance and longitudinal magnetoresistance of Cr 75 (Fe x Mn 1-x ) 25 alloys, x=0.64, 0.72, are studied in the temperature range 1.5-270 K in applied field up to 7.5 T. The magnetoresistance is negative and strongly correlated with the spin reorientation. In the temperature range where the antiferromagnetic and ferromagnetic domains coexist, the samples display giant magnetoresistance which follows a H n -law at high field. (orig.)

  1. Strong spin-filtering and spin-valve effects in a molecular V–C60–V contact

    Directory of Open Access Journals (Sweden)

    Mohammad Koleini

    2012-08-01

    Full Text Available Motivated by the recent achievements in the manipulation of C60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111 surface using first-principles calculations. For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%. Moreover, we find a significant change in the conductance between parallel and anti-parallel spin polarizations in the junction (86% which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems.

  2. Strong spin-filtering and spin-valve effects in a molecular V-C-60-V contact

    DEFF Research Database (Denmark)

    Koleini, Mohammad; Brandbyge, Mads

    2012-01-01

    Motivated by the recent achievements in the manipulation of C-60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C-60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111) surface using first-principles calculations....... For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C-60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%). Moreover, we find a significant change...... in the conductance between parallel and anti-parallel spin polarizations in the junction (86%) which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems....

  3. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

    Science.gov (United States)

    Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

    2018-05-08

    A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

  4. Magnetoresistance and spin frustration at low temperature in LaMn sub 1 sub - sub x Ni sub x O sub 3 sub + subdelta (0 <= x <= 0.1)

    CERN Document Server

    Yamamoto, A

    2003-01-01

    This paper investigates the relation between the temperature dependence of magnetoresistance (MR) and spin frustration in LaMnO sub 3 sub + subdelta when Ni is doped into the Mn site. The specimens experience magnetic frustration introduced by the competition between antiferromagnetic (AFM) and ferromagnetic (FM) interactions. According to the temperature dependence of magnetization after cooling the specimen in zero field and non-zero field, Ni-doped specimens behave like cluster glasses. This magnetic frustration at the low temperature is believed to result from the disordered spin structure between AFM and FM phases in these specimens. When the structural symmetry in the specimen is higher, the FM arrangement increases by double the exchange interaction. However, MR decreases in the same temperature region for the same reason. We suggest that the temperature dependence of MR below the Curie temperature in the Ni-doped specimen is controlled by the change of magnetization that occurs with structural change.

  5. Magnetoresistance and magnetostriction of Ni81Fe19 and Co90Fe10 mono- and bilayer films

    International Nuclear Information System (INIS)

    Sahingoz, R.; Hollingworth, M.P.; Gibbs, M.R.J.; Murdoch, S.J.

    2005-01-01

    Monolayer and bilayer films of Ni 81 Fe 19 , Co 90 Fe 10 , Co 90 Fe 10 /Ni 81 Fe 19 , and Ni 81 Fe 19 /Co 90 Fe 10 have been grown on thermally oxidized Si. The magnetoresistance (MR) of the samples was measured as a function of applied DC magnetic field, using a four-point probe method. The magnetostriction constant, λ s , was derived from the change of anisotropy field as a function of strain. The dependence of the MR on different combinations of film layers was investigated. The magnetoresistance of the bilayers changed dramatically upon reversal of the layer order. The mono- and bilayer samples with the same material on top of the substrate showed similar MR loop shapes. However, the saturation fields of the bilayers were larger than those for the monolayers. The magnetostriction of all samples was negative. We discuss the consequences for the study and optimization of spin-valve devices

  6. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  7. Probing giant magnetoresistance with THz spectroscopy

    DEFF Research Database (Denmark)

    Jin, Zuanming; Tkach, Alexander; Casper, Frederick

    2014-01-01

    We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA.......We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....

  8. Non-local magnetoresistance in YIG/Pt nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goennenwein, Sebastian T. B., E-mail: goennenwein@wmi.badw.de; Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Schlitz, Richard; Ganzhorn, Kathrin [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Althammer, Matthias [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany)

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  9. Magnetoresistance in terbium and holmium single crystals

    International Nuclear Information System (INIS)

    Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.

    1976-01-01

    The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested

  10. Template-grown NiFe/Cu/NiFe nanowires for spin transfer devices

    DEFF Research Database (Denmark)

    Piraux, L.; Renard, K.; Guillemet, R.

    2007-01-01

    We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena....... The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin...

  11. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

    2011-01-01

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

  12. Superconducting spin valves based on epitaxial Fe/V-hybrid thin film heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Nowak, Gregor

    2010-12-10

    This study presents a systematic investigation of the SSV effect in FM/SC/FM and FM/N/FM/SC heterostructures. Before investigating the actual SSV effect, we first pre-analyzed structural, magnetic and superconducting properties of the Fe/V system. In these preliminary studies we demonstrated, that epitaxial Fe/V heterostructures of superior crystalline quality can be grown by DC sputter deposition. With a Fe/V interface thickness of only one monolayer, the chemical separation of the Fe and V layers is extremely sharp. Moreover, the magnetic investigation showed that from thicknesses of two Fe(001) monolayers on the Fe layers in the superlattice possess a magnetic moment. Furthermore, we demonstrated the interlayer exchange coupling as oscillatory function of the V interlayer thickness. The investigations of the superconducting parameters of the Fe/V system revealed a non-monotonic T{sub S} vs. d{sub Fe} dependence in sample series (1). This observation proves the presence of the FM/SC proximity effect. The studies of various heterostructures of the design AFM/FM/SC/FM revealed a strong counteracting influence on the SSV effect, the stray field effect. The sample containing Fe{sub 25}V{sub 75} alloy layers, has the highest ratio of Cooper pair coherence length and superconductor thickness (ξ{sub S})/(d{sub S}), and its superconducting transition temperature is comparable to the sample with Fe{sub 35}V{sub 65} alloy layers. Nevertheless, the SSV effect in sample Fe{sub 25}V{sub 75} with alloy layers is much smaller than in sample with Fe{sub 35}V{sub 65} alloy layers. For a high-performance superconducting spin valve based on a FM1/SC/FM2 heterostructure at least four parameters have to be optimized simultaneously. 1. The magnetic domain size in FM1 and FM2 has to be as large as possible in order to reduce the stray field effect resulting from magnetization components in the FM domain walls perpendicular to the SC layer. 2. When using ferromagnetic alloys as

  13. Large spin accumulation due to spin-charge coupling across a break-junction

    Science.gov (United States)

    Chen, Shuhan; Zou, Han; Chui, Siu-Tat; Ji, Yi

    2013-03-01

    We investigate large spin signals in break-junction nonlocal spin valves (NLSV). The break-junction is a nanometer-sized vacuum tunneling gap between the spin detector and the nonmagnetic channel, formed by electro-static discharge. The spin signals can be either inverted or non-inverted and the magnitudes are much larger than those of standard NLSV. Spin signals with high percentage values (10% - 0%) have been observed. When the frequency of the a.c. modulation is varied, the absolute magnitudes of signals remain the same although the percentage values change. These observations affirm the nonlocal nature of the measurements and rule out local magnetoresistive effects. Owing to the spin-charge coupling across the break-junction, the spin accumulation in a ferromagnet splits into two terms. One term decays on the charge screening length (0.1 nm) and the other decays on the spin diffusion length (10 nm nm). The magnitude of the former is proportional to the resistance of the junction. Therefore a highly resistive break-junction leads to a large spin accumulation and thereby a large spin signal. The signs of the spin signal are determined by the relationship between spin-dependent conductivities, diffusion constants, and density of states of the ferromagnet. This work was supported by US DOE grant No. DE-FG02-07ER46374.

  14. Spin-transport-phenomena in metals, semiconductors, and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias Klaus

    2012-07-19

    Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

  15. Colossal magnetoresistance in manganites and related prototype devices

    International Nuclear Information System (INIS)

    Liu Yu-Kuai; Yin Yue-Wei; Li Xiao-Guang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO 3 p—n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles. (topical review - magnetism, magnetic materials, and interdisciplinary research)

  16. Tuning spin-polarized transport in organic semiconductors

    Science.gov (United States)

    Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

    Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

  17. Ultra-Compact 100 × 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors

    Directory of Open Access Journals (Sweden)

    Diana C. Leitao

    2015-12-01

    Full Text Available Magnetic field mapping with micrometric spatial resolution and high sensitivity is a challenging application, and the technological solutions are usually based on large area devices integrating discrete magnetic flux guide elements. In this work we demonstrate a high performance hybrid device with improved field sensitivity levels and small footprint, consisting of a ultra-compact 2D design where nanometric spin valve sensors are inserted within the gap of thin-film magnetic flux concentrators. Pole-sensor distances down to 400 nm are demonstrated using nanofabrication techniques combined with an optimized liftoff process. These 100 × 100 μm 2 pixel sensors can be integrated in modular devices for surface mapping without moving parts.

  18. Spin injection into Pt-polymers with large spin-orbit coupling

    Science.gov (United States)

    Sun, Dali; McLaughlin, Ryan; Siegel, Gene; Tiwari, Ashutosh; Vardeny, Z. Valy

    2014-03-01

    Organic spintronics has entered a new era of devices that integrate organic light-emitting diodes (OLED) in organic spin valve (OSV) geometry (dubbed bipolar organic spin valve, or spin-OLED), for actively manipulating the device electroluminescence via the spin alignment of two ferromagnetic electrodes (Science 337, 204-209, 2012; Appl. Phys. Lett. 103, 042411, 2013). Organic semiconductors that contain heavy metal elements have been widely used as phosphorescent dopants in white-OLEDs. However such active materials are detrimental for OSV operation due to their large spin-orbit coupling (SOC) that may limit the spin diffusion length and thus spin-OLED based on organics with large SOC is a challenge. We report the successful fabrication of OSVs based on pi-conjugated polymers which contain intrachain Platinum atoms (dubbed Pt-polymers). Spin injection into the Pt-polymers is investigated by the giant magnetoresistance (GMR) effect as a function of bias voltage, temperature and polymer layer thickness. From the GMR bias voltage dependence we infer that the ``impendence mismatch'' between ferromagnetic electrodes and Pt-polymer may be suppressed due to the large SOC. Research sponsored by the NSF (Grant No. DMR-1104495) and NSF-MRSEC (DMR 1121252) at the University of Utah.

  19. Giant magnetoresistance through a single molecule.

    Science.gov (United States)

    Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf

    2011-03-01

    Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance.

  20. Steps toward an all-electric spin valve using side-gated quantum point contacts with lateral spin–orbit coupling

    International Nuclear Information System (INIS)

    Bhandari, Nikhil; Dutta, Maitreya; Charles, James; Cahay, Marc; Newrock, Richard S; Herbert, Stephen T

    2013-01-01

    Spin-based electronics or ‘spintronics’ has been a topic of interest for over two decades. Electronic devices based on the manipulation of the electron spin are believed to offer the possibility of very small, non-volatile and ultrafast devices with very low power consumption. Since the proposal of a spin-field-effect transistor (SpinFET) by Datta and Das in 1990, many attempts have been made to achieve spin injection, detection and manipulation in semiconductor materials either by incorporating ferromagnetic materials into device architectures or by using external magnetic fields. This approach has significant design complexities, partly due to the influence of stray magnetic fields on device operation. In addition, magnetic electrodes can have magneto-resistance and spurious Hall voltages that can complicate device performance. To date, there has been no successful report of a working Datta–Das SpinFET. Over the last few years we have investigated an all-electric means of manipulating spins, one that only relies on electric fields and voltages and not on ferromagnetic materials or external magnetic fields. We believe we have found a pathway toward this goal, using in-plane side-gated quantum point contacts (QPCs) that rely on lateral spin–orbit coupling to create spin polarization. In this paper we discuss several aspects of our work, beginning with our finding what we believe is nearly complete spin-polarization in InAs QPCs by purely electrical means, our theoretical work to understand the basic mechanisms leading to that situation (asymmetric lateral confinement, lateral spin–orbit coupling and a strong e–e interaction), and our recent work extending the effort to GaAs and to dual QPC systems where one QPC acts as a polarizer and the other as an analyzer. (review)

  1. Experimental investigation of the nature of the magnetoresistance effects in Pd-YIG hybrid structures.

    Science.gov (United States)

    Lin, Tao; Tang, Chi; Alyahayaei, Hamad M; Shi, Jing

    2014-07-18

    In bilayers consisting of Pd and yttrium iron garnet (Y(3)Fe(5)O(12) or YIG), we observe vanishingly small room-temperature conventional anisotropic magnetoresistance but large new magnetoresistance that is similar to the spin Hall magnetoresistance previously reported in Pt-YIG bilayers. We report a temperature dependence study of the two magnetoresistance effects in Pt-YIG bilayers. As the temperature is decreased, the new magnetoresistance shows a peak, whereas the anisotropic magnetoresistance effect starts to appear and increases monotonically. We find that the magnetoresistance peak shifts to lower temperatures in thicker Pd samples, a feature characteristic of the spin current effect. The distinct temperature dependence reveals fundamentally different mechanisms responsible for the two effects in such hybrid structures.

  2. Low temperature junction magnetoresistance properties of Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4}/SiO{sub 2}/p-Si magnetic diode like heterostructure for spin-electronics

    Energy Technology Data Exchange (ETDEWEB)

    Panda, J.; Nath, T.K., E-mail: tnath@phy.iitkgp.ernet.in

    2016-02-29

    The magnetic heterojunction diode has been fabricated by growing Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4} (CZFO) on well cleaned p-Si substrate using pulsed laser deposition technique, and its behavior under magnetic field is experimentally studied in details. The magnetic field dependent current–voltage characteristics (I–V) have been studied at different isothermal conditions in the range of 5–300 K. The junction shows magnetic diode like rectifying behavior at low temperature, whereas at high temperatures the junction shows nonlinear I–V characteristics. Magnetic field shows a strong effect on junction resistance (CZFO/p-Si). It is interesting that the positive junction magnetoresistance (MR) thus produced, remains very large at low temperature regime (590% at 5 K) and gradually decreases at higher temperatures. In contrast, CZFO magnetic thin film shows negative MR behavior, whereas the junction shows large positive junction magnetoresistance (JMR) behavior throughout the temperature range. The origin of JMR has been best explained by standard spin injection theory. The temperature dependent spin life time (τ) has been estimated for our heterostructure. The value of τ decreases with increasing temperature. The spin life time (183 ps), spin polarization (0.71) and spin diffusion length (375 nm) have been estimated of the heterostructure at 10 K. - Highlights: • The junction magnetoresistance (JMR) of Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4}/SiO{sub 2}/p-Si heterojunction is studied. • Heterostructure shows rectifying magnetic diode like behavior. • The highest positive JMR (590%) has been found to be at 5 K. • The origin of observed JMR has been best explained by spin injection theory. • The spin life time, spin diffusion length and spin polarization have been estimated at 10 K.

  3. Spin transport and relaxation in graphene

    International Nuclear Information System (INIS)

    Han Wei; McCreary, K.M.; Pi, K.; Wang, W.H.; Li Yan; Wen, H.; Chen, J.R.; Kawakami, R.K.

    2012-01-01

    We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for

  4. Absence of hyperfine effects in 13C-graphene spin-valve devices

    NARCIS (Netherlands)

    Wojtaszek, M.; Vera-Marun, I.J.; Whiteway, E.; Hilke, M.; Wees, B.J. van

    2014-01-01

    The carbon isotope 13C, in contrast to 12C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of 13C in natural carbon allotropes (~1%). Chemical vapor deposition (CVD) allows for artificial synthesis of

  5. Colossal magnetoresistance manganites

    Indian Academy of Sciences (India)

    Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.

  6. Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers; Magnetotransport in Spinventil-Systemen mit amorphen magnetischen und supraleitenden Teilschichten

    Energy Technology Data Exchange (ETDEWEB)

    Steiner, Roland Johannes

    2006-04-27

    The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T{sub c}(H)- and the R(H)-curve. (orig.)

  7. Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

    OpenAIRE

    Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.

    2009-01-01

    Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-...

  8. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  9. Spin-valves with modified synthetic antiferromagnets exhibiting an enhanced bias point control capability at submicrometer dimensions

    International Nuclear Information System (INIS)

    Park, J.-S.; Lee, S.-R.; Kim, Y.K.

    2004-01-01

    Bias point control is of practical importance for operating read sensors for magnetic recording and magnetic random access memory devices. To attain bias point control capability, in particular, at submicrometer cell size, a modified synthetic antiferromagnet-based spin-valve (MSSV) structure was devised. A series of calculations were carried out to investigate the effect of size variation on their MR transfer behaviors. The cell dimension was varied from 10 to 0.05 μm. The typical MSSV comprises IrMn (9.0)/CoFe (P1, 1.5)/Ru (0.7)/CoFe (P2, 3.0)/Ru (0.7)/CoFe (P3, 1.5)/Cu (2.8)/CoFe (1.6)/NiFe (3.2) (in nm). As the cell size decreased, the bias point in the MSSV maintained nearly zero regardless of the cell size. The bias point was further tuned by varying the P3 layer thickness. Moreover, the effective exchange field (H ex.eff ) of the MSSV was much larger than that of the conventional SSV. The field sensitivity of the MSSV was very high indicating that the free layer can rotate more sharply

  10. Spin-valves with modified synthetic antiferromagnets exhibiting an enhanced bias point control capability at submicrometer dimensions

    Science.gov (United States)

    Park, Jeong-Suk; Lee, Seong-Rae; Kim, Young Keun

    2004-08-01

    Bias point control is of practical importance for operating read sensors for magnetic recording and magnetic random access memory devices. To attain bias point control capability, in particular, at submicrometer cell size, a modified synthetic antiferromagnet-based spin-valve (MSSV) structure was devised. A series of calculations were carried out to investigate the effect of size variation on their MR transfer behaviors. The cell dimension was varied from 10 to 0.05 μm. The typical MSSV comprises IrMn (9.0)/CoFe (P1, 1.5)/Ru (0.7)/CoFe (P2, 3.0)/Ru (0.7)/CoFe (P3, 1.5)/Cu (2.8)/CoFe (1.6)/NiFe (3.2) (in nm). As the cell size decreased, the bias point in the MSSV maintained nearly zero regardless of the cell size. The bias point was further tuned by varying the P3 layer thickness. Moreover, the effective exchange field ( Hex.eff) of the MSSV was much larger than that of the conventional SSV. The field sensitivity of the MSSV was very high indicating that the free layer can rotate more sharply.

  11. Interplay between interface structure and magnetism in NiFe/Cu/Ni-based pseudo-spin valves

    Science.gov (United States)

    Loving, Melissa G.; Ambrose, Thomas F.; Ermer, Henry; Miller, Don; Naaman, Ofer

    2018-05-01

    Magnetic pseudo spin valves (PSVs) with superconducting Nb electrodes, have been leading candidates for an energy-efficient memory solution compatible with cryogenic operation of ultra-low power superconducting logic. Integration of these PSV Josephson junctions in a standard multi-layer Nb process requires growing high-quality thin magnetic films on a thick Nb bottom electrode (i.e. ≥1.5kÅ, to achieve bulk superconducting properties). However, as deposited, 1.5kÅ Nb exhibits a rough surface with a characteristic rice grain morphology, which severely degrades the switching properties of subsequently deposited PSVs. Therefore, in order to achieve coherent switching throughout a PSV, the Nb interface must be modified. Here, we demonstrate that the Nb surface morphology and PSV crystallinity can be altered with the incorporation of separate 50Å Cu or 100Å Al/50Å Cu non-magnetic seed layers, and demonstrate their impact on the magnetic switching of a 15Å Ni80Fe20/50Å Cu/20Å Ni PSV, at both room temperature and at 10 K. Most notably, these results show that the incorporation of an Al seed layer leads to an improved face centered cubic templating through the bulk of the PSV, and ultimately to superior magnetic switching.

  12. Magnetoresistance of amorphous CuZr: weak localization in a three dimensional system

    International Nuclear Information System (INIS)

    Bieri, J.B.; Fert, A.; Creuzet, G.

    1984-01-01

    Observations of anomalous magnetoresistance in amorphous CuZr at low temperature are reported. The magnetoresistance can be precisely accounted for in theoretical models of localization for 3-dimensional metallic systems in the presence of strong spin-orbit interactions (with a significant additional contribution from the quenching of superconducting fluctuations at the lowest temperatures). Magnetoresistance measurements on various other systems show that such 3-dimensional localization effects are very generally observed in amorphous alloys. (author)

  13. Element-specific ferromagnetic resonance in epitaxial Heusler spin valve systems

    Energy Technology Data Exchange (ETDEWEB)

    Klaer, P; Jorge, E Arbelo; Jourdan, M; Elmers, H J [Institut fuer Physik, Johannes Gutenberg-Universitaet Mainz, D-55128 Mainz (Germany); Hoffmann, F; Woltersdorf, G; Back, C H, E-mail: elmers@uni-mainz.de [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg (Germany)

    2011-10-26

    Time-resolved x-ray magnetic circular dichroism was used to investigate epitaxial MgO(100)/Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and MgO(100)/Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al/Cr/CoFe films. The precessional motion of the individual sublattice magnetization, excited by continuous microwave excitation in the range 2-10 GHz, was detected by tuning the x-ray photon energy to the L{sub 3} absorption edges of Cr, Fe and Co. The relative phase angle of the sublattice magnetization's response is smaller than the detection limit of 2{sup 0}. A weakly antiferromagnetically coupled CoFe layer causes an increase in the ferromagnetic resonance linewidth consisting of a constant offset and a component linearly increasing with frequency that we partly attribute to non-local damping due to spin pumping.

  14. Big magnetoresistance: magnetic polarons

    International Nuclear Information System (INIS)

    Teresa, J.M. de; Ibarra, M.R.

    1997-01-01

    By using several macro and microscopic experimental techniques we have given evidence for magnetoresistance in manganese oxides caused by the effect of the magnetic field on the magnetic polarons. (Author) 3 refs

  15. Magnetoresistive waves in plasmas

    International Nuclear Information System (INIS)

    Felber, F.S.; Hunter, R.O. Jr.; Pereira, N.R.; Tajima, T.

    1982-01-01

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed

  16. Laser-assisted spin-polarized transport in graphene tunnel junctions

    International Nuclear Information System (INIS)

    Ding Kaihe; Zhu Zhengang; Berakdar, Jamal

    2012-01-01

    The Keldysh nonequilibrium Green’s function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. (paper)

  17. Resistivity dependence of magnetoresistance in Co/ZnO films.

    Science.gov (United States)

    Quan, Zhi-Yong; Zhang, Li; Liu, Wei; Zeng, Hao; Xu, Xiao-Hong

    2014-01-06

    We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices.

  18. Heterostructures for Realizing Magnon-Induced Spin Transfer Torque

    Directory of Open Access Journals (Sweden)

    P. B. Jayathilaka

    2012-01-01

    Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.

  19. Tunneling anisotropic magnetoresistance in C60-based organic spintronic systems

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2014-01-01

    C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak spin-orbit and hyperfine interactions, which is a prerequisite for long spin lifetimes. We report spin-polarized transport in spin-valve-like structures containing ultrathin (<10 nm) C 60 layers,

  20. Spin–orbit coupling induced magnetoresistance oscillation in a dc biased two-dimensional electron system

    International Nuclear Information System (INIS)

    Wang, C M; Lei, X L

    2014-01-01

    We study dc-current effects on the magnetoresistance oscillation in a two-dimensional electron gas with Rashba spin-orbit coupling, using the balance-equation approach to nonlinear magnetotransport. In the weak current limit the magnetoresistance exhibits periodical Shubnikov-de Haas oscillation with changing Rashba coupling strength for a fixed magnetic field. At finite dc bias, the period of the oscillation halves when the interbranch contribution to resistivity dominates. With further increasing current density, the oscillatory resistivity exhibits phase inversion, i.e., magnetoresistivity minima (maxima) invert to maxima (minima) at certain values of the dc bias, which is due to the current-induced magnetoresistance oscillation. (paper)

  1. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    Energy Technology Data Exchange (ETDEWEB)

    Boltaev, A.P.; Pudonin, F.A. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Sherstnev, I.A., E-mail: sherstnev@lebedev.ru [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Egorov, D.A. [National Research Nuclear University MEPhI, Kashirskoe shosse 31, 115409 Moscow (Russian Federation); Kozmin, A.M. [National Research University of Electronic Technology, Shokin Square, 1, Zelenograd, 124482 Moscow (Russian Federation)

    2017-04-15

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  2. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    International Nuclear Information System (INIS)

    Boltaev, A.P.; Pudonin, F.A.; Sherstnev, I.A.; Egorov, D.A.; Kozmin, A.M.

    2017-01-01

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  3. Study of the temperature dependence of giant magnetoresistance in metallic granular composite

    International Nuclear Information System (INIS)

    Ju Sheng; Li, Z.-Y.

    2002-01-01

    The temperature dependence of the giant magnetoresistance of metallic granular composite is studied. It is considered that the composite contains both large magnetic grains with surface spin S' and small magnetic impurities. It is found that the decrease of surface spin S' of grain is the main cause of an almost linear decrease of giant magnetoresistance with the increase of temperature in high temperature range. The magnetic impurities, composed of several atoms, lead to an almost linear increase of the giant magnetoresistance with the decrease of temperature in low temperature range. Our calculations are in good agreement with recent experimental data for metallic nanogranular composites

  4. Spin current

    CERN Document Server

    Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

    2017-01-01

    Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

  5. Current perpendicular to plane giant magnetoresistance in laminated nanostructures

    International Nuclear Information System (INIS)

    Vedyayev, A.; Zhukov, I.; Dieny, B.

    2005-01-01

    We theoretically studied spin-dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of giant magnetoresistance (GMR). This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones even though lamination induces a significant increase in CPP resistance

  6. Proposal for a graphene-based all-spin logic gate

    International Nuclear Information System (INIS)

    Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud; Zhang, Youguang

    2015-01-01

    In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG

  7. Proposal for a graphene-based all-spin logic gate

    Science.gov (United States)

    Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Zhang, Youguang; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud

    2015-02-01

    In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (˜μm), higher data throughput, faster computing speed (˜ns), and lower power consumption (˜μA) can be expected from the G-ASLG.

  8. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  9. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua; Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

    2015-01-01

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  10. Anomalous magnetoresistance in amorphous metals

    International Nuclear Information System (INIS)

    Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.

    1984-01-01

    The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations

  11. Spin transport in spin filtering magnetic tunneling junctions.

    Science.gov (United States)

    Li, Yun; Lee, Eok Kyun

    2007-11-01

    Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

  12. ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

    KAUST Repository

    Monteblanco, Elmer; Ortiz Pauyac, Christian; Savero, Williams; RojasSanchez, J. Carlos; Schuhl, A.

    2017-01-01

    Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

  13. ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

    KAUST Repository

    Monteblanco, Elmer

    2017-03-14

    Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

  14. Modeling the collective excitations in a full Heusler Co2 FeAl0.5 Si0.5 (CFAS) spin valve magnetic nanopillar in the electromagnetic field

    International Nuclear Information System (INIS)

    David, Cherine; Arumugam, Brinda; Rajamani, Amuda; Natarajan, Kanimozhi

    2014-01-01

    This paper describes the physics of collective excitations that are caused by spin-transfer torques in CFAS magnetic multilayer. When the magnetizations of the pinned and free layers are not collinear with each other, the spin-polarized currents transfer angular momentum to the magnetizations near the interfaces, giving rise to spin-transfer torques. The currents in magnetic multilayer are spin polarised and can carry enough angular momentum. When an electron spin carried by the current interacts with a magnetic layer, the exchange interaction leads to torque between the spin and the magnetization vector of the free layer. This is Spin Transfer Torque (STT) and it excites the magnetization when it is large enough. The Spin Transfer Torque induced collective excitations for the CFAS spin valve pillar have been extensively studied in this paper. - Highlights: • We have modeled LLGS equation for CFAS multilayer array. • The dynamics of collective excitation induced by STT is investigated. • The interactions exhibit solitonic behaviour at both limiting modes of polarization. • The spin components of the solitons are graphically represented

  15. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    Science.gov (United States)

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

  16. Anomalous electronic structure and magnetoresistance in TaAs2.

    Science.gov (United States)

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-06-07

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

  17. Non-local electrical spin injection and detection in germanium at room temperature

    Science.gov (United States)

    Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

    2017-10-01

    Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

  18. Prospect for tunneling anisotropic magneto-resistance in ferrimagnets: spin-orbit coupling effects in Mn.sub.3./sub.Ge and Mn.sub.3./sub.Ga

    Czech Academy of Sciences Publication Activity Database

    Khmelevskyi, S.; Shick, Alexander; Mohn, P.

    2016-01-01

    Roč. 109, č. 22 (2016), s. 1-4, č. článku 222402. ISSN 0003-6951 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : magneto-resistance * ferrimagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.411, year: 2016

  19. Electrical properties and granular magnetoresistance in nanomanganite

    Directory of Open Access Journals (Sweden)

    َAli Rostamnejadi

    2017-05-01

    Full Text Available In this research single phaseLa0.7(Sr 1-xBax0.3MnO3(x =0, 0.1 , 0.2 , 0.3 nanomanganite with crystalline size of 18-28 nm have been prepared by sol gel method. The structural properties have been studied using X-ray diffraction spectra with its Rietveld analysis and scaning electron microscope images. The magnetic and elctrical properties have been investigated by measuring the ac magnetic susceptibility and resistivity in the presence of magnetic fields in the range of 0-20 kOe. The obtained results from ac magnetic susceptibility show that the Curie temperture of the samples are above room temperture. The results of resistivity show that the metal-insulator phase transition temperture of and compounds are below room temperture. The resistivity of the samples strongly decreases and their magnetoresistance almost linearly increases by incrasing the applied magnetic field at different tempertures. The value of magnetoresistance for compound is 10 % and 14 % at 275 K and 200 K, and for compound is 13 %  and 27 % at 275 K and 100 K, respectively which are suitable for magnetic field sensing applications. The magneto-transport properties of nanomanganite are described in terms of spin dependent scattering of charge carriers from grain boundaries and their spin dependent tunneling between grains. 

  20. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  1. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    Science.gov (United States)

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  2. Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  3. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films

    International Nuclear Information System (INIS)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B; Steren, L B; Vega, D

    2010-01-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La 0.75 Sr 0.25 MnO 3 films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  4. Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal

    KAUST Repository

    Li, Peng

    2015-12-10

    Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

  5. Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal

    KAUST Repository

    Li, Peng; Xia, Chuan; Zheng, Dongxing; Wang, Ping; Jin, Chao; Bai, Haili

    2015-01-01

    Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

  6. The magnetoresistivity of some rare-earth metals

    International Nuclear Information System (INIS)

    Webber, G.D.

    1978-10-01

    The thesis describes measurements of the low temperature transverse magnetoresistivities of single crystals of rare-earth metals in magnetic fields up to 8 Tesla. A general introduction to the rare-earths, their magnetic properties and a review of the basic theory and mechanism of magnetoresistivity is given. Details of the crystal structure, growth of single crystals and sample mounting method follow. The experimental equipment and measuring techniques are then described. The low temperature transverse magnetoresistivity of polycrystalline lanthanum and single crystal praseodymium for the temperature range 4.2 - 30K is measured. The separation of the spin-disorder and Fermi-surface orbital effect contributions are described and the theoretical and experimental spin-disorder values compared. Magnetoresistivity measurements for neodymium single crystals (4.2 - 30K) are compared with the magnetic properties determined from neutron diffraction studies. Results for gadolinium single crystals (4.2 - 200K) are compared for two different impurity levels and with previous work. (UK)

  7. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

    Science.gov (United States)

    Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-01

    It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

  8. Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

    International Nuclear Information System (INIS)

    Yan, Zhongbo; Wan, Shaolong

    2016-01-01

    Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance. (paper)

  9. Signature of the magnetic transitions in Y0.2Pr0.8Ba2Cu3O7-δ in high field angular magnetoresistivity

    International Nuclear Information System (INIS)

    Sandu, V; Zhang, C; Almasan, C C; Taylor, B J; Maple, M B

    2006-01-01

    In-plane (ab) and out-of-plane (c-axis) magnetoresistivity display different symmetry crossovers and/or transitions in 14 T magnetic field applied parallel to the CuO 2 planes. The in-plane magnetoresistivity crosses over from four-fold symmetry below 6 K to two-fold symmetry at higher temperatures, which becomes dominant at temperatures higher than 40 K. The out-of-plane magnetoresistivity changes at 17 K from four fold symmetry to ordinary sin 2 θ at higher temperatures. The behaviour of the c-axis magnetoresistivity can be ascribed to the antiferromagnetic ordering of the Pr spins whereas the symmetry change of the in-plane magnetoresistivity at 6 K might be attributed to commensurate to incommensurate crossovers of the spin subsystems. The antiferromagnetic order of the Cu(2) sublattice seems to have only a week effect on the magnetoresistivity

  10. Experimental Test of the Spin Mixing Interface Conductivity Concept

    NARCIS (Netherlands)

    Weiler, M.; Althammer, M.; Schreier, M.; Lotze, J.; Pernpeintner, M.; Meyer, S.; Huebl, H.; Gross, R.; Kamra, A.; Xiao, J.; Chen, Y.T.; Jiao, H.J.; Bauer, G.E.W.; Goennenwein, S.T.B.

    2013-01-01

    We perform a quantitative, comparative study of the spin pumping, spin Seebeck, and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20??yttrium???iron?garnet/Pt samples. Our experimental results fully support present, exclusively spin

  11. Current perpendicular to plane giant magnetoresistance and tunneling magnetoresistance treated with unified model

    NARCIS (Netherlands)

    Jonkers, PAE

    2002-01-01

    The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,

  12. Exchange bias mechanism in FM/FM/AF spin valve systems in the presence of random unidirectional anisotropy field at the AF interface: The role played by the interface roughness due to randomness

    Science.gov (United States)

    Yüksel, Yusuf

    2018-05-01

    We propose an atomistic model and present Monte Carlo simulation results regarding the influence of FM/AF interface structure on the hysteresis mechanism and exchange bias behavior for a spin valve type FM/FM/AF magnetic junction. We simulate perfectly flat and roughened interface structures both with uncompensated interfacial AF moments. In order to simulate rough interface effect, we introduce the concept of random exchange anisotropy field induced at the interface, and acting on the interface AF spins. Our results yield that different types of the random field distributions of anisotropy field may lead to different behavior of exchange bias.

  13. Transverse thermal magnetoresistance of potassium

    International Nuclear Information System (INIS)

    Newrock, R.S.; Maxfield, B.W.

    1976-01-01

    Results are presented of extensive thermal magnetoresistance measurements on single-crystal and polycrystalline specimens of potassium having residual resistance ratios (RRR) ranging from 1100 to 5300. Measurements were made between 2 and 9 0 K for magnetic fields up to 1.8 T. The observed thermal magnetoresistance cannot be understood on the basis of either semiclassical theories or from the electrical magnetoresistance and the Wiedemann-Franz law. A number of relationships are observed between the thermal and electrical magnetoresistances, many of which are not immediately obvious when comparing direct experimental observations. The thermal magnetoresistance W(T,H) is given reasonably well by W(T,H)T = W(T,0)T + AH + BH 2 , where both A and B are temperature-dependent coefficients. Results show that A = A 0 + A 1 T 3 , while B(T) cannot be expressed as any simple power law. A 0 is dependent on the RRR, while A 1 is independent of the RRR. Two relationships are found between corresponding coefficients in the electrical and thermal magnetoresistance: (i) the Wiedmann--Franz law relates A 0 to the Kohler slope of the electrical magnetoresistance and (ii) the temperature-dependent portions of the electrical and thermal Kohler slopes are both proportional to the electron--phonon scattering contribution to the corresponding zero-field resistance. The latter provides evidence that inelastic scattering is very important in determining the temperature-dependent linear magnetoresistances. Part, but by no means all, of the quadratic thermal resistance is accounted for by lattice thermal conduction. It is concluded that at least a portion of the anomalous electrical and thermal magnetoresistances is due to intrinsic causes and not inhomogeneities or other macroscopic defects

  14. Anomalous magnetoresistance in the spinel superconductor LiTi2O4.

    Science.gov (United States)

    Jin, K; He, G; Zhang, X; Maruyama, S; Yasui, S; Suchoski, R; Shin, J; Jiang, Y; Yu, H S; Yuan, J; Shan, L; Kusmartsev, F V; Greene, R L; Takeuchi, I

    2015-05-20

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors.

  15. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    Science.gov (United States)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  16. Giant magnetoresistance in lateral metallic nanostructures for spintronic applications.

    Science.gov (United States)

    Zahnd, G; Vila, L; Pham, V T; Marty, A; Beigné, C; Vergnaud, C; Attané, J P

    2017-08-25

    In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

  17. Magnetoresistance and magnetic breakdown phenomenon in amorphous magnetic alloys

    International Nuclear Information System (INIS)

    Chen Hui-yu; Gong Xiao-yu

    1988-01-01

    Transverse magnetoresistance in amorphous magnetic alloys (Fe/sub 1-//sub x/CO/sub x/) 82 Cu/sub 0.4/Si/sub 4.4/B/sub 13.2/ were measured at room temperature and in the magnetic field range 0--15 kOe. For large magnetic field, three different functional dependences of magnetoresistance on magnetic field strength have been found as follows: (1) Δrho/rho approaches saturation. (2) Δrho/rho increases proportionally to H 2 . (3) For x = 0.15, a sharp Δrho/rho peak appears at a certain magnetic field strength in spatial angular orientation of both magnetic field and electric currents. Case (3) is a magnetic breakdown phenomenon. Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. This gap is the spin-orbit gap and its magnitude is a sensitive function of magnetization. Hence the magnitude and width of the magnetoresistance peak and the magnetic field strength at the peak point are functions of angular orientation of both magnetic field and electric current

  18. Heart valve surgery

    Science.gov (United States)

    ... replacement; Valve repair; Heart valve prosthesis; Mechanical valves; Prosthetic valves ... surgery. Your heart valve has been damaged by infection ( endocarditis ). You have received a new heart valve ...

  19. Impact of Disorder on Spin Dependent Transport Phenomena

    KAUST Repository

    Saidaoui, Hamed

    2016-07-03

    The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using

  20. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  1. Challenges and trends in the development of a magnetoresistive biochip portable platform

    International Nuclear Information System (INIS)

    Martins, Veronica C.; Germano, Jose; Cardoso, Filipe A.; Loureiro, Joana; Cardoso, Susana; Sousa, Leonel; Piedade, Moises; Fonseca, Luis P.; Freitas, P.P.

    2010-01-01

    The magnetoresistive (MR) biochip concept has emerged a decade ago and since then considerable achievements were made in the field. At the moment there is a strong effort in building up a fully integrated, portable and accessible spintronic device for bioanalytical assays. Some of the major challenges and working solutions are addressed here. In a MR-biochip platform five main components can be identified as key points for its success: the MR sensing elements, the magnetic labels, the surface chemistry, the microfluidic system and the read-out electronic set-up. Linear spin valve sensors were fabricated with good sensitivity and proper field range. Magnetic particles were carefully characterized and selected seeking for the best biomolecular labels. The surface chemistry was extensively optimized in order to get it more efficient, specific and reproducible. A microfluidic structure was designed and fabricated in polydimethilsiloxane (PDMS) to work as sample transportation and simultaneously control the wash out steps. Finally, a portable and autonomous electronic microsystem provides the electronic circuitry to control, address and read-out up to 256 sensors. From the assembling of all these components emerges a versatile portable platform. The first results from the platform in a real-time detection of 20mer single stranded DNA sequences labeled with 130 nm magnetic labels are presented.

  2. Challenges and trends in the development of a magnetoresistive biochip portable platform

    Energy Technology Data Exchange (ETDEWEB)

    Martins, Veronica C., E-mail: veronicamartins@ist.utl.p [INESC-MN-Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias and IN-Institute of Nanoscience and Nanotechnology, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); IBB-Institute for Biotechnology and Bioengineering, Center for Biological and Chemical Engineering (CEBQ), Instituto Superior Tecnico, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Germano, Jose [INESC-ID Instituto de Engenharia de Sistemas e Computadores-Investigacao e Desenvolvimento, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Cardoso, Filipe A.; Loureiro, Joana [INESC-MN-Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias and IN-Institute of Nanoscience and Nanotechnology, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Physics Department, Instituto Superior Tecnico, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Cardoso, Susana [INESC-MN-Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias and IN-Institute of Nanoscience and Nanotechnology, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Sousa, Leonel; Piedade, Moises [INESC-ID Instituto de Engenharia de Sistemas e Computadores-Investigacao e Desenvolvimento, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Electrical and Computer Engineering Department, Instituto Superior Tecnico, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Fonseca, Luis P. [IBB-Institute for Biotechnology and Bioengineering, Center for Biological and Chemical Engineering (CEBQ), Instituto Superior Tecnico, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Freitas, P.P. [INESC-MN-Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias and IN-Institute of Nanoscience and Nanotechnology, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Physics Department, Instituto Superior Tecnico, Av. Rovisco Pais, 1049-001 Lisbon (Portugal)

    2010-05-15

    The magnetoresistive (MR) biochip concept has emerged a decade ago and since then considerable achievements were made in the field. At the moment there is a strong effort in building up a fully integrated, portable and accessible spintronic device for bioanalytical assays. Some of the major challenges and working solutions are addressed here. In a MR-biochip platform five main components can be identified as key points for its success: the MR sensing elements, the magnetic labels, the surface chemistry, the microfluidic system and the read-out electronic set-up. Linear spin valve sensors were fabricated with good sensitivity and proper field range. Magnetic particles were carefully characterized and selected seeking for the best biomolecular labels. The surface chemistry was extensively optimized in order to get it more efficient, specific and reproducible. A microfluidic structure was designed and fabricated in polydimethilsiloxane (PDMS) to work as sample transportation and simultaneously control the wash out steps. Finally, a portable and autonomous electronic microsystem provides the electronic circuitry to control, address and read-out up to 256 sensors. From the assembling of all these components emerges a versatile portable platform. The first results from the platform in a real-time detection of 20mer single stranded DNA sequences labeled with 130 nm magnetic labels are presented.

  3. Self-consistent study of local and nonlocal magnetoresistance in a YIG/Pt bilayer

    Science.gov (United States)

    Wang, Xi-guang; Zhou, Zhen-wei; Nie, Yao-zhuang; Xia, Qing-lin; Guo, Guang-hua

    2018-03-01

    We present a self-consistent study of the local spin Hall magnetoresistance (SMR) and nonlocal magnon-mediated magnetoresistance (MMR) in a heavy-metal/magnetic-insulator heterostructure at finite temperature. We find that the thermal fluctuation of magnetization significantly affects the SMR. It appears unidirectional with respect to the direction of electrical current (or magnetization). The unidirectionality of SMR originates from the asymmetry of creation or annihilation of thermal magnons induced by the spin Hall torque. Also, a self-consistent model can well describe the features of MMR.

  4. Anisotropic magnetoresistance and thermodynamic fluctuations in high-temperature superconductors

    International Nuclear Information System (INIS)

    Heine, G.

    1999-05-01

    Measurements of the in-plane and out-of-plane resistivity and the transverse and longitudinal in-plane and out-of-plane magnetoresistance above T, are reported in the high-temperature superconductors Bi2Sr2CaCu208+' and YBa2CU307 b . The carrier concentration of the Bi2Sr2CaCu208+' single crystals covers a broad range of the phase diagram from the slightly under doped to the moderately over doped region. The doping concentration of the thin films ranges from strongly under doped to optimally doped. The in-plane resistivities obey a metallic-like temperature dependence with a positive magnetoresistance in the transverse and the longitudinal orientation of the magnetic field. The out-of-plane resistivities show an activated behavior above T, with a metallic region at higher temperatures and negative magnetoresistance. The data were analyzed in the framework of a model for superconducting order parameter fluctuations. The positive in-plane magnetoresistance of the highly anisotropic Bi2Sr2CaCu208+x single crystals is interpreted as the suppression of the fluctuation-conductivity enhancement including orbital and spin contributions, whereas the negative magnetoresistance arises from the reduction of the fluctuation-induced pseudogap in the single-electron density-of-states by the magnetic field. For higher temperatures a transition to the normal-state magnetoresistance occurs for the in-plane transport. In the less anisotropic YBa2CU307 b thin films the positive out-of-plane magnetoresistance near T, changes sign to a negative magnetoresistance at higher temperatures. This behavior is also consistent with predictions from the theory of thermodynamic order-parameter fluctuations. The agreement of the fluctuation theory with the experimental findings is excellent for samples from the over doped side of the phase diagram, but deteriorate with decreasing carrier concentration. This behavior is interpreted by the dominating d-wave symmetry of the superconducting order

  5. Evaluation of Magnetoresistive RAM for Space Applications

    Science.gov (United States)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  6. Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization

    International Nuclear Information System (INIS)

    Li-Jun, Chen; De-Yong, Wang; Qing-Feng, Zhan; Wei, He; Qing-An, Li

    2008-01-01

    We present the magnetoresistance measurements of ultrathin Mn 5 Ge 3 films with different thicknesses at low temperatures. Owing to the lattice mismatch between Mn 5 Ge 3 and Ge (111), the thickness of Mn 5 Ge 3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn 5 Ge 3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn 5 Ge 3 film is a potential material for spin injection. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Magnetoresistance in La0.7Ca0.3MnO3-YBa2Cu3O7 F/S/F trilayers

    International Nuclear Information System (INIS)

    Pena, V.; Visani, C.; Bruno, F.; Garcia-Barriocanal, J.; Arias, D.; Rivera, A.; Sefrioui, Z.; Leon, C.; Te Velthuis, S.G.E.; Hoffmann, A.; Nemes, N.; Garcia-Hernandez, M.; Martinez, J.L.; Santamaria, J.

    2007-01-01

    We report large magnetoresistance in ferromagnet/superconductor/ferromagnet structures made of La 0.7 Ca 0.3 MnO 3 and YBa 2 Cu 3 O 7 at temperatures along the resistive transition. We find that the magnetoresistance phenomenon is independent on the orientation of electric current versus field. Furthermore, the effect is also independent on the sweep rate of the magnetic field. This excludes interpretations in terms of spontaneous vortices or anisotropic magnetoresistance of the ferromagnetic layers and supports the view that the magnetoresistance phenomenon originates at the spin-dependent transport of quasiparticles transmitted from the ferromagnetic electrodes into the superconductor

  8. Role of motive forces for the spin torque transfer for nano-structures

    Science.gov (United States)

    Barnes, Stewart

    2009-03-01

    Despite an announced imminent commercial realization of spin transfer random access memory (SPRAM) the current theory evolved from that of Slonczewski [1,2] does not conserve energy. Barnes and Maekawa [3] have shown, in order correct this defect, forces which originate from the spin rather than the charge of an electron must be accounted for, this leading to the concept of spin-motive-forces (smf) which must appear in Faraday's law and which significantly modifies the theory for spin-valves and domain wall devices [4]. A multi-channel theory in which these smf's redirect the spin currents will be described. In nano-structures it is now well known that the Kondo effect is reflected by conductance peaks. In essence, the spin degrees of freedom are used to enhance conduction. In a system with nano-magnets and a Coulomb blockade [5] the similar spin channels can be the only means of effective conduction. This results in a smf which lasts for minutes and an enormous magneto-resistance [5]. This implies the possibility of ``single electron memory'' in which the magnetic state is switched by a single electron. [4pt] [1] J. C. Slonczewski, Current-Driven Excitation of Magnetic Multilayers J. Magn. Magn. Mater. 159, L1 (1996). [0pt] [2] Y. Tserkovnyak, A. Brataas, G. E. W. Bauer, and B. I. Halperin, Nonlocal magnetization dynamics in ferromagnetic heterostructures, Rev. Mod. Phys. 77, 1375 (2005). [0pt] [3] S. E. Barnes and S. Maekawa, Generalization of Faraday's Law to Include Nonconservative Spin Forces Phys. Rev. Lett. 98, 246601 (2007); S. E. Barnes and S. Maekawa, Currents induced by domain wall motion in thin ferromagnetic wires. arXiv:cond-mat/ 0410021v1 (2004). [0pt] [4] S. E., Barnes, Spin motive forces, measurement, and spin-valves. J. Magn. Magn. Mat. 310, 2035-2037 (2007); S. E. Barnes, J. Ieda. J and S. Maekawa, Magnetic memory and current amplification devices using moving domain walls. Appl. Phys. Lett. 89, 122507 (2006). [0pt] [5] Pham-Nam Hai, Byung-Ho Yu

  9. Valve Disease

    Science.gov (United States)

    ... blood. There are 4 valves in the heart: tricuspid, pulmonary, mitral, and aortic. Two types of problems can disrupt blood flow through the valves: regurgitation or stenosis. Regurgitation is also called insufficiency or incompetence. Regurgitation happens when a valve doesn’ ...

  10. Domain wall magnetoresistance in nanowires: Dependence on geometrical factors and material parameters

    International Nuclear Information System (INIS)

    Allende, S.; Retamal, J.C.; Altbir, D.; D'Albuquerque e Castro, J.

    2014-01-01

    The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved

  11. Domain wall magnetoresistance in nanowires: Dependence on geometrical factors and material parameters

    Energy Technology Data Exchange (ETDEWEB)

    Allende, S.; Retamal, J.C. [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); Altbir, D., E-mail: dora.altbir@usach.cl [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); D' Albuquerque e Castro, J. [Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro 21941-972 (Brazil)

    2014-04-15

    The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved.

  12. Anisotropic magnetoresistance in a Fermi glass

    International Nuclear Information System (INIS)

    Ovadyahu, Z.; Physics Department, Ben-Gurion University of the Negev, Beer-Sheva, Israel 84120)

    1986-01-01

    Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity

  13. Anisotropic Magnetoresistance in Antiferromagnetic Sr_{2}IrO_{4}

    Directory of Open Access Journals (Sweden)

    C. Wang

    2014-11-01

    Full Text Available We report point-contact measurements of anisotropic magnetoresistance (AMR in a single crystal of antiferromagnetic Mott insulator Sr_{2}IrO_{4}. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28% for modest magnetic fields (250 mT applied within the IrO_{2} a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr_{2}IrO_{4}. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%–0.5% and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.

  14. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

    Science.gov (United States)

    Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B

    2016-10-20

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

  15. Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport

    Science.gov (United States)

    Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I.

    2018-03-01

    We derive kinetic equations for polaron hopping in organic materials that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide a self-consistent framework for the description of the bipolaron mechanism of the organic magnetoresistance. At low applied voltages, the equations can be reduced to those for an effective resistor network that generalizes the Miller-Abrahams network and includes the effect of spin relaxation on the system resistivity. Our theory discloses the close relationship between the organic magnetoresistance and the intersite correlations. Moreover, in the absence of correlations, as in an ordered system with zero Hubbard energy, the magnetoresistance vanishes.

  16. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  17. Tunnelling anisotropic magnetoresistance at La_0_._6_7Sr_0_._3_3MnO_3-graphene interfaces

    International Nuclear Information System (INIS)

    Phillips, L. C.; Yan, W.; Kar-Narayan, S.; Mathur, N. D.; Lombardo, A.; Barbone, M.; Milana, S.; Ferrari, A. C.; Ghidini, M.; Hämäläinen, S. J.; Dijken, S. van

    2016-01-01

    Using ferromagnetic La_0_._6_7Sr_0_._3_3MnO_3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La_0_._6_7Sr_0_._3_3MnO_3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

  18. Tight valve

    International Nuclear Information System (INIS)

    Guedj, F.

    1987-01-01

    This sealed valve is made with a valve seat, an axial valve with a rod fixed to its upper end, a thick bell surrounding the rod and welded by a thin join on the valve casing, a threated ring screwed onto the upper end of the rod and a magnet or electromagnet rotating the ring outside the bell [fr

  19. Anisotropic spin relaxation in graphene

    NARCIS (Netherlands)

    Tombros, N.; Tanabe, S.; Veligura, A.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J.

    2008-01-01

    Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular

  20. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun; Cao, Yan-ling; Fang, Yue-wen; Li, Qiang; Zhang, Jie; Duan, Chun-gang; Yan, Shi-shen; Tian, Yu-feng; Huang, Rong; Zheng, Rong-kun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo

    2015-01-01

    , and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/Co

  1. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the

  2. Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts

    DEFF Research Database (Denmark)

    Koller, Sonja; Grifoni, Milena; Paaske, Jens

    2012-01-01

    We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within...

  3. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    International Nuclear Information System (INIS)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-01-01

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO 2 /FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO 2 /FGNPA junction also drastically enhances TMR ratios up to ∼100%

  4. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  5. Tunneling magnetoresistance from a symmetry filtering effect

    International Nuclear Information System (INIS)

    Butler, William H

    2008-01-01

    This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. (topical review)

  6. Cr doping induced negative transverse magnetoresistance in C d3A s2 thin films

    Science.gov (United States)

    Liu, Yanwen; Tiwari, Rajarshi; Narayan, Awadhesh; Jin, Zhao; Yuan, Xiang; Zhang, Cheng; Chen, Feng; Li, Liang; Xia, Zhengcai; Sanvito, Stefano; Zhou, Peng; Xiu, Faxian

    2018-02-01

    The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped C d3A s2 thin films grown by molecular-beam epitaxy. With the Cr doping, C d3A s2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped C d3A s2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal C d3A s2 . The Cr-induced topological phase transition and the formation of magnetic polarons in C d3A s2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

  7. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    2015-05-28

    May 28, 2015 ... Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...

  8. Check valve

    Science.gov (United States)

    Upton, H.A.; Garcia, P.

    1999-08-24

    A check valve for use in a GDCS of a nuclear reactor and having a motor driven disk including a rotatable armature for rotating the check valve disk over its entire range of motion is described. In one embodiment, the check valve includes a valve body having a coolant flow channel extending therethrough. The coolant flow channel includes an inlet end and an outlet end. A valve body seat is located on an inner surface of the valve body. The check valve further includes a disk assembly, sometimes referred to as the motor driven disc, having a counterweight and a disk shaped valve. The disk valve includes a disk base having a seat for seating with the valve body seat. The disk assembly further includes a first hinge pin member which extends at least partially through the disk assembly and is engaged to the disk. The disk valve is rotatable relative to the first hinge pin member. The check valve also includes a motor having a stator frame with a stator bore therein. An armature is rotatably positioned within the stator bore and the armature is coupled to the disk valve to cause the disk valve to rotate about its full range of motion. 5 figs.

  9. Check valve

    International Nuclear Information System (INIS)

    Upton, H.A.; Garcia, P.

    1999-01-01

    A check valve for use in a GDCS of a nuclear reactor and having a motor driven disk including a rotatable armature for rotating the check valve disk over its entire range of motion is described. In one embodiment, the check valve includes a valve body having a coolant flow channel extending therethrough. The coolant flow channel includes an inlet end and an outlet end. A valve body seat is located on an inner surface of the valve body. The check valve further includes a disk assembly, sometimes referred to as the motor driven disc, having a counterweight and a disk shaped valve. The disk valve includes a disk base having a seat for seating with the valve body seat. The disk assembly further includes a first hinge pin member which extends at least partially through the disk assembly and is engaged to the disk. The disk valve is rotatable relative to the first hinge pin member. The check valve also includes a motor having a stator frame with a stator bore therein. An armature is rotatably positioned within the stator bore and the armature is coupled to the disk valve to cause the disk valve to rotate about its full range of motion. 5 figs

  10. Magnetic Nanostructures Spin Dynamics and Spin Transport

    CERN Document Server

    Farle, Michael

    2013-01-01

    Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

  11. Spin Filtering in Epitaxial Spinel Films with Nanoscale Phase Separation

    KAUST Repository

    Li, Peng; Xia, Chuan; Li, Jun; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Zhang, Junwei; Peng, Yong; Alshareef, Husam N.; Zhang, Xixiang

    2017-01-01

    The coexistence of ferromagnetic metallic phase and antiferromagnetic insulating phase in nanoscaled inhomogeneous perovskite oxides accounts for the colossal magnetoresistance. Although the model of spin-polarized electron transport across

  12. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

    2015-01-01

    The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

  13. Tailoring magnetoresistance at the atomic level: An ab initio study

    KAUST Repository

    Tao, Kun

    2012-01-05

    The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

  14. Tailoring magnetoresistance at the atomic level: An ab initio study

    KAUST Repository

    Tao, Kun; Stepanyuk, V. S.; Rungger, I.; Sanvito, S.

    2012-01-01

    The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

  15. Tunneling anisotropic magnetoresistance via molecular π orbitals of Pb dimers

    Science.gov (United States)

    Schöneberg, Johannes; Ferriani, Paolo; Heinze, Stefan; Weismann, Alexander; Berndt, Richard

    2018-01-01

    Pb dimers on a ferromagnetic surface are shown to exhibit large tunneling anisotropic magnetoresistance (TAMR) due to molecular π orbitals. Dimers oriented differently with respect to the magnetization directions of a ferromagnetic Fe double layer on W(110) were made with a scanning tunneling microscope. Depending on the dimer orientations, TAMR is absent or as large as 20% at the Fermi level. General arguments and first-principles calculations show that mixing of molecular orbitals due to spin-orbit coupling, which leads to TAMR, is maximal when the magnetization is oriented parallel to the dimer axis.

  16. Investigation of doping and particle size effect on structural, magnetic and magnetoresistance properties of manganites

    Directory of Open Access Journals (Sweden)

    M. Hakimi

    2008-06-01

    Full Text Available  In this paper after introduction of manganites, we have studied the effect of particle size and doping on structural, magnetic and magnetoresistance of LSMO manganite samples. The magnetoresistance measurements show that, by decreasing the particle size LFMR increases. Also the results show that the LFMR increases at low doping levels and decreases at high doping levels. The spin dependent tunneling and scattering at the grain boundaries is the origin of increasing the LFMR at low doping levels. Also the substitution of impurity ions at Mn sites and subsequently weaking of double exchange is responsible for decreasing of LFMR at high doping level.

  17. Magnetoresistance of samarium in the 4.2-300 K range

    International Nuclear Information System (INIS)

    Trubitsyn, V.A.; Shalashov, V.F.

    1980-01-01

    Electric conductivity, transverse and longitudinal magnetoresistance of polycrystalline samarium with the purity of 99.9% in the 4.2-300 K temperature range and in magnetic fields up to 50 ke, are measured. The constituent of specific electric conductivity caused by spin disorder is 30.7 μOhmxcm, m*/m=2.6, the exchange parameter is G=3.1 eVxA 3 . Both transverse and longitudinal magnetoresistance are positive at 4.2 K; and the increase of temperature reveals a number of anomalies, evidently conditioned by the alteration of samarium magnetic structure

  18. Giant magnetoresistance in melt spun Cu85Co10Ni5

    DEFF Research Database (Denmark)

    Curiotto, Stefano; Johnson, Erik; Celegato, Federica

    2009-01-01

    CuCoNi rapidly solidified alloys are interesting because they display giant magnetoresistance (GMR). In the present work a Cu85Co10Ni5 alloy has been synthesized by melt spinning and analysed for GMR. The ribbons obtained have been annealed at different temperatures and the evolution of the crystal...... structure with annealing has been studied by X-ray diffraction. The. ne microstructure has been observed by TEM and related to the magnetic properties, investigated in a vibrating sample magnetometer. In the studied composition the magnetoresistance was found to be lower than in binary CuCo alloys without...

  19. Spin transfer torque generated magnetic droplet solitons (invited)

    International Nuclear Information System (INIS)

    Chung, S.; Mohseni, S. M.; Sani, S. R.; Iacocca, E.; Dumas, R. K.; Pogoryelov, Ye.; Anh Nguyen, T. N.; Muduli, P. K.; Eklund, A.; Hoefer, M.; Åkerman, J.

    2014-01-01

    We present recent experimental and numerical advancements in the understanding of spin transfer torque generated magnetic droplet solitons. The experimental work focuses on nano-contact spin torque oscillators (NC-STOs) based on orthogonal (pseudo) spin valves where the Co fixed layer has an easy-plane anisotropy, and the [Co/Ni] free layer has a strong perpendicular magnetic anisotropy. The NC-STO resistance and microwave signal generation are measured simultaneously as a function of drive current and applied perpendicular magnetic field. Both exhibit dramatic transitions at a certain current dependent critical field value, where the microwave frequency drops 10 GHz, modulation sidebands appear, and the resistance exhibits a jump, while the magnetoresistance changes sign. We interpret these observations as the nucleation of a magnetic droplet soliton with a large fraction of its magnetization processing with an angle greater than 90°, i.e., around a direction opposite that of the applied field. This interpretation is corroborated by numerical simulations. When the field is further increased, we find that the droplet eventually collapses under the pressure from the Zeeman energy

  20. Control Valve

    Energy Technology Data Exchange (ETDEWEB)

    Moore, Wayne R.

    2018-03-20

    A control valve includes a first conduit having a first inlet and a first outlet and defining a first passage; a second conduit having a second inlet and a second outlet and defining a second passage, the second conduit extending into the first passage such that the second inlet is located within the first passage; and a valve plate disposed pivotably within the first passage, the valve plate defining a valve plate surface. Pivoting of the valve plate within the first passage varies flow from the first inlet to the first outlet and the valve plate is pivotal between a first position and a second position such that in the first position the valve plate substantially prevents fluid communication between the first passage and the second passage and such that in the second position the valve plate permits fluid communication between the first passage and the second passage.

  1. Interfacial exchange, magnetic coupling and magnetoresistance in ultra-thin GdN/NbN/GdN tri-layers

    Science.gov (United States)

    Takamura, Yota; Goncalves, Rafael S.; Cascales, Juan Pedro; Altinkok, Atilgan; de Araujo, Clodoaldo I. L.; Lauter, Valeria; Moodera, Jagadeesh S.; MIT Team

    Superconducting spin-valve structures with a superconductive (SC) spacer sandwiched between ferromagnetic (FM) insulating layers [Li PRL 2013, Senapati APL 2013, Zhu Nat. Mat. 2016.] are attractive since the SC and FM characteristics can mutually be controlled by the proximity effect. We investigated reactively sputtered GdN/NbN/GdN tri-layer structures with various (SC) NbN spacer thicknesses (dNbN) from superconducting to normal layers. Magnetoresistive behavior similar to GMR in metallic magnetic multilayers was observed in the tri-layers with dNbN between 5-10 monolayers (ML), where thinner NbN layers did not show superconductivity down to 4.2 K. The occurrence of GMR signal indicates the presence of a ML of FM metallic layers at the GdN/NbN interfaces. Susceptibility and transport measurements in these samples revealed that the interface layers (ILs) are ferromagnetically coupled with adjacent GdN layers. The thickness of each of the IL is deduced to be about 1.25 ML, and as a result for dNbN magnetically coupled and switched simultaneously. These findings and interfacial characterization by various techniques will be presented. Work supported by NSF and ONR Grants.

  2. Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

    International Nuclear Information System (INIS)

    Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui

    2016-01-01

    We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

  3. Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Benliang [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China); Liu, Guang; Guo, Dan [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China)

    2016-11-01

    We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

  4. Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

    OpenAIRE

    Casper, Frederick; Felser, Claudia

    2007-01-01

    The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

  5. Valve assembly

    International Nuclear Information System (INIS)

    Sandling, M.

    1981-01-01

    An improved valve assembly, used for controlling the flow of radioactive slurry, is described. Radioactive contamination of the air during removal or replacement of the valve is prevented by sucking air from the atmosphere through a portion of the structure above the valve housing. (U.K.)

  6. Magnon Valve Effect between Two Magnetic Insulators

    Science.gov (United States)

    Wu, H.; Huang, L.; Fang, C.; Yang, B. S.; Wan, C. H.; Yu, G. Q.; Feng, J. F.; Wei, H. X.; Han, X. F.

    2018-03-01

    The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

  7. Fast Magnetoresistive Random-Access Memory

    Science.gov (United States)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

  8. A study of inelastic electron-phonon interactions on tunneling magnetoresistance of a nano-scale device

    International Nuclear Information System (INIS)

    Modarresi, M.; Roknabadi, M.R.; Shahtahmasbi, N.; Vahedi Fakhrabad, D.; Arabshahi, H.

    2011-01-01

    In this research, we have studied the effect of inelastic electron-phonon interactions on current-voltage characteristic and tunneling magnetoresistance of a polythiophene molecule that is sandwiched between two cobalt electrodes using modified Green's function method as proposed by Walczak. The molecule is described with a modified Su-Schrieffer-Heeger Hamiltonian. The ground state of the molecule is obtained by Hellman-Feynman theorem. Electrodes are described in the wide-band approximation and spin-flip is neglected during conduction. Our calculation results show that with increase in voltage the currents increase and tunneling magnetoresistance decreases. Change in tunneling magnetoresistance due to inelastic interactions is limited in a small bias voltage interval and can be neglected in the other bias voltages. -- Research Highlights: →We investigate the effect of inelastic interaction on transport properties. →Due to inelastic interactions tunneling magnetoresistance decreases. →Decrease in TMR is restricted in a small voltage interval.

  9. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  10. Magnetoresistance of drop-cast film of cobalt-substituted magnetite nanocrystals.

    Science.gov (United States)

    Kohiki, Shigemi; Nara, Koichiro; Mitome, Masanori; Tsuya, Daiju

    2014-10-22

    An oleic acid-coated Fe2.7Co0.3O4 nanocrystal (NC) self-assembled film was fabricated via drop casting of colloidal particles onto a three-terminal electrode/MgO substrate. The film exhibited a large coercivity (1620 Oe) and bifurcation of the zero-field-cooled and field-cooled magnetizations at 300 K. At 10 K, the film exhibited both a Coulomb blockade due to single electron charging as well as a magnetoresistance of ∼-80% due to spin-dependent electron tunneling. At 300 K, the film also showed a magnetoresistance of ∼-80% due to hopping of spin-polarized electrons. Enhanced magnetic coupling between adjacent NCs and the large coercivity resulted in a large spin-polarized current flow even at 300 K.

  11. Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

    International Nuclear Information System (INIS)

    Sluchanko, N. E.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Sluchanko, D. N.; Dukhnenko, A. V.; Levchenko, A. V.

    2009-01-01

    The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB 12 (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8-35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler's rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB 12 . In the magnetic dodecaborides HoB 12 , ErB 12 , and TmB 12 , three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB 12 is observed at T > 25 K; in the range T N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB 12 . It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB 12 and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation

  12. Observation of Room-Temperature Magnetoresistance in Monolayer MoS2 by Ferromagnetic Gating.

    Science.gov (United States)

    Jie, Wenjing; Yang, Zhibin; Zhang, Fan; Bai, Gongxun; Leung, Chi Wah; Hao, Jianhua

    2017-07-25

    Room-temperature magnetoresistance (MR) effect is observed in heterostructures of wafer-scale MoS 2 layers and ferromagnetic dielectric CoFe 2 O 4 (CFO) thin films. Through the ferromagnetic gating, an MR ratio of -12.7% is experimentally achieved in monolayer MoS 2 under 90 kOe magnetic field at room temperature (RT). The observed MR ratio is much higher than that in previously reported nonmagnetic metal coupled with ferromagnetic insulator, which generally exhibited MR ratio of less than 1%. The enhanced MR is attributed to the spin accumulation at the heterostructure interface and spin injection to the MoS 2 layers by the strong spin-orbit coupling effect. The injected spin can contribute to the spin current and give rise to the MR by changing the resistance of MoS 2 layers. Furthermore, the MR effect decreases as the thickness of MoS 2 increases, and the MR ratio becomes negligible in MoS 2 with thickness more than 10 layers. Besides, it is interesting to find a magnetic field direction dependent spin Hall magnetoresistance that stems from a combination of the spin Hall and the inverse spin Hall effects. Our research provides an insight into exploring RT MR in monolayer materials, which should be helpful for developing ultrathin magnetic storage devices in the atomically thin limit.

  13. Observation of magnetic polarons in the magnetoresistive pyrochlore Lu2V2O7

    International Nuclear Information System (INIS)

    Storchak, Vyacheslav G; Brewer, Jess H; Eshchenko, Dmitry G; Mengyan, Patrick W; Zhou Haidong; Wiebe, Christopher R

    2013-01-01

    Materials that exhibit colossal magnetoresistance (CMR) have attracted much attention due to their potential technological applications. One particularly interesting model for the magnetoresistance of low-carrier-density ferromagnets involves mediation by magnetic polarons (MP)—electrons localized in nanoscale ferromagnetic ‘droplets’ by their exchange interaction. However, MP have not previously been directly detected and their size has been difficult to determine from macroscopic measurements. In order to provide this crucial information, we have carried out muon spin rotation measurements on the magnetoresistive semiconductor Lu 2 V 2 O 7 in the temperature range from 2 to 300 K and in magnetic fields up to 7 T. Magnetic polarons with characteristic radius R ≈ 0.4 nm are detected below about 100 K, where Lu 2 V 2 O 7 exhibits CMR; at higher temperature, where the magnetoresistance vanishes, these MP also disappear. This observation confirms the MP-mediated model of CMR and reveals the microscopic size of the MP in magnetoresistive pyrochlores. (paper)

  14. Single atom anisotropic magnetoresistance on a topological insulator surface

    KAUST Repository

    Narayan, Awadhesh

    2015-03-12

    © 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

  15. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  16. Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes

    Science.gov (United States)

    Shi, Sha; Xie, Zuoti; Liu, Feilong; Smith, Darryl L.; Frisbie, C. Daniel; Ruden, P. Paul

    2017-04-01

    Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers of different oligophenylene thiols sandwiched between gold contacts has recently been reported [Z. Xie, S. Shi, F. Liu, D. L. Smith, P. P. Ruden, and C. D. Frisbie, ACS Nano 10, 8571 (2016), 10.1021/acsnano.6b03853]. The transport mechanism through the organic molecules was determined to be nonresonant tunneling. To explain this kind of magnetoresistance, we develop an analytical model based on the interaction of the tunneling charge carrier with an unpaired charge carrier populating a contact-molecule interface state. The Coulomb interaction between carriers causes the transmission coefficients to depend on their relative spin orientation. Singlet and triplet pairing of the tunneling and the interface carriers thus correspond to separate conduction channels with different transmission probabilities. Spin relaxation enabling transitions between the different channels, and therefore tending to maximize the tunneling current for a given applied bias, can be suppressed by relatively small magnetic fields, leading to large magnetoresistance. Our model elucidates how the Coulomb interaction gives rise to transmission probabilities that depend on spin and how an applied magnetic field can inhibit transitions between different spin configurations.

  17. Artifacts that mimic ballistic magnetoresistance

    International Nuclear Information System (INIS)

    Egelhoff, W.F. . E-mail : egelhoff@nist.gov; Gan, L.; Ettedgui, H.; Kadmon, Y.; Powell, C.J.; Chen, P.J.; Shapiro, A.J.; McMichael, R.D.; Mallett, J.J.; Moffat, T.P.; Stiles, M.D.; Svedberg, E.B.

    2005-01-01

    We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments would require stability on the atomic scale. No method for achieving such stability in macroscopic wires is apparent. We conclude that macroscopic magnetic wires cannot be used to establish the validity of the BMR effect

  18. Next generation spin torque memories

    CERN Document Server

    Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

    2017-01-01

    This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

  19. Mitral Valve Disease

    Science.gov (United States)

    ... for mitral valve replacement—mechanical valves (metal) or biological valves (tissue). The principal advantage of mechanical valves ... small risk of stroke due to blood clotting. Biological valves usually are made from animal tissue. Biological ...

  20. The effect of band Jahn-Teller distortion on the magnetoresistivity of manganites: a model study

    International Nuclear Information System (INIS)

    Rout, G C; Panda, Saswati; Behera, S N

    2011-01-01

    We present a model study of magnetoresistance through the interplay of magnetisation, structural distortion and external magnetic field for the manganite systems. The manganite system is described by the Hamiltonian which consists of the s-d type double exchange interaction, Heisenberg spin-spin interaction among the core electrons, and the static and dynamic band Jahn-Teller (JT) interaction in the e g band. The relaxation time of the e g electron is found from the imaginary part of the Green's function using the total Hamiltonian consisting of the interactions due to the electron and phonon. The calculated resistivity exhibits a peak in the pure JT distorted insulating phase separating the low temperature metallic ferromagnetic phase and the high temperature paramagnetic phase. The resistivity is suppressed with the increase of the external magnetic field. The e g electron band splitting and its effect on magnetoresistivity is reported here. (paper)

  1. The effect of band Jahn-Teller distortion on the magnetoresistivity of manganites: a model study

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G C [Condensed Matter Physics Group, P G Department of Applied Physics and Ballistics, F M University, Balasore 756 019 (India); Panda, Saswati [Trident Academy of Technology, F2/A, Chandaka Industrial Estate, Bhubaneswar 751 024 (India); Behera, S N, E-mail: gcr@iopb.res.in, E-mail: saswatip7@gmail.com [National Institute of Science and Technology, Palur Hills, Berhampur 761 008 (India)

    2011-10-05

    We present a model study of magnetoresistance through the interplay of magnetisation, structural distortion and external magnetic field for the manganite systems. The manganite system is described by the Hamiltonian which consists of the s-d type double exchange interaction, Heisenberg spin-spin interaction among the core electrons, and the static and dynamic band Jahn-Teller (JT) interaction in the e{sub g} band. The relaxation time of the e{sub g} electron is found from the imaginary part of the Green's function using the total Hamiltonian consisting of the interactions due to the electron and phonon. The calculated resistivity exhibits a peak in the pure JT distorted insulating phase separating the low temperature metallic ferromagnetic phase and the high temperature paramagnetic phase. The resistivity is suppressed with the increase of the external magnetic field. The e{sub g} electron band splitting and its effect on magnetoresistivity is reported here. (paper)

  2. Magnetoresistive multilayers deposited on the AAO membranes

    International Nuclear Information System (INIS)

    Malkinski, Leszek M.; Chalastaras, Athanasios; Vovk, Andriy; Jung, Jin-Seung; Kim, Eun-Mee; Jun, Jong-Ho; Ventrice, Carl A.

    2005-01-01

    Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si

  3. Magnetoresistance of nanogranular Ni/NiO controlled by exchange anisotropy

    International Nuclear Information System (INIS)

    Del Bianco, L.; Spizzo, F.; Tamisari, M.; Allia, P.

    2013-01-01

    A link between exchange anisotropy and magnetoresistance has been found to occur in a Ni/NiO sample consisting of Ni nanocrystallites (mean size ∼13 nm, Ni content ∼33 vol%) dispersed in a NiO matrix. This material shows metallic-type electric conduction and isotropic spin-dependent magnetoresistance as well as exchange bias effect. The latter is the outcome of an exchange anisotropy arising from the contact interaction between the Ni phase and the NiO matrix. Combined analysis of magnetization M(H) and magnetoresistance MR(H) loops measured in the 5–250 K temperature range after zero-field-cooling (ZFC) and after field-cooling (FC) from 300 K reveals that the magnetoresistance is influenced by exchange anisotropy, which is triggered by the FC process and can be modified in strength by varying the temperature. Compared to the ZFC case, the exchange anisotropy produces a horizontal shift of the FC MR(H) loop along with a reduction of the MR response associated to the reorientation of the Ni moments. A strict connection between magnetoresistance and remanent magnetization of FC loops on one side and the exchange field on the other, ruled by exchange anisotropy, is indicated. - Highlights: • Nanogranular Ni/NiO with giant magnetoresistance (MR) and exchange bias effect. • Exchange anisotropy produces a shift of the field-cooled MR(H) loop and reduces MR. • MR, remanence of field-cooled loops and exchange field are three correlated quantities. • It is possible to control MR of nanogranular systems through the exchange anisotropy

  4. Continuous control of spin polarization using a magnetic field

    Science.gov (United States)

    Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y.

    2016-05-01

    The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

  5. Continuous control of spin polarization using a magnetic field

    International Nuclear Information System (INIS)

    Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y.

    2016-01-01

    The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

  6. Continuous control of spin polarization using a magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y., E-mail: tingyong.chen@asu.edu [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2016-05-23

    The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

  7. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  8. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

    2011-01-01

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  9. Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Felix, J.F. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Figueiredo, L.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Mendes, J.B.S. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Morais, P.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Huazhong University of Science and Technology, School of Automation, 430074 Wuhan (China); Araujo, C.I.L. de., E-mail: dearaujo@ufv.br [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil)

    2015-12-01

    In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples. - Highlights: • Electrodeposition of Fe nanostructures on high resistive silicon substrates. • Spin polarized current among clusters through Si suggested by isotropic magnetoresistance. • Low field microwave absorption arising from the sample shape anisotropy. • Contactless magnetoresistive device characterization by resonance measurements.

  10. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  11. Pauli Spin Blockade and the Ultrasmall Magnetic Field Effect

    KAUST Repository

    Danon, Jeroen

    2013-08-06

    Based on the spin-blockade model for organic magnetoresistance, we present an analytic expression for the polaron-bipolaron transition rate, taking into account the effective nuclear fields on the two sites. We reveal the physics behind the qualitatively different magnetoconductance line shapes observed in experiment, as well as the ultrasmall magnetic field effect (USFE). Since our findings agree in detail with recent experiments, they also indirectly provide support for the spin-blockade interpretation of organic magnetoresistance. In addition, we predict the existence of a similar USFE in semiconductor double quantum dots tuned to the spin-blockade regime.

  12. Pauli Spin Blockade and the Ultrasmall Magnetic Field Effect

    KAUST Repository

    Danon, Jeroen; Wang, Xuhui; Manchon, Aurelien

    2013-01-01

    Based on the spin-blockade model for organic magnetoresistance, we present an analytic expression for the polaron-bipolaron transition rate, taking into account the effective nuclear fields on the two sites. We reveal the physics behind the qualitatively different magnetoconductance line shapes observed in experiment, as well as the ultrasmall magnetic field effect (USFE). Since our findings agree in detail with recent experiments, they also indirectly provide support for the spin-blockade interpretation of organic magnetoresistance. In addition, we predict the existence of a similar USFE in semiconductor double quantum dots tuned to the spin-blockade regime.

  13. Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

    Directory of Open Access Journals (Sweden)

    Arijit Mitra

    2016-05-01

    Full Text Available We have observed large tunneling Magnetoresistance (TMR in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe3O4 nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in the current versus voltage characteristics as the charging energy exceeds the thermal energy. A similar study is also carried out with spherical nanoparticles. A 24% TMR is recorded at room temperature which increases to 41% at 180 K for spherical particles. Mössbauer spectra reveal better stoichiometry for octahedral particles which is attainable due to lesser surface disorder and strong amine coupling at the facets of octahedral Fe3O4 nanoparticles. Less stoichiometric defect in octahedral nanoparticles leads to a higher value of spin polarization and therefore larger TMR in octahedral nanoparticles.

  14. Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei; Pearson, John E.; Hoffmann, Axel [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Vlaminck, Vincent [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Colegio de Ciencias e Ingenería, Universidad San Fransciso de Quito, Quito (Ecuador); Divan, Ralu [Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States); Bader, Samuel D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States)

    2013-12-09

    The spin diffusion length of Pt at room temperature and at 8 K is experimentally determined via spin pumping and spin Hall effect in permalloy/Pt bilayers. Voltages generated during excitation of ferromagnetic resonance from the inverse spin Hall effect and anisotropic magnetoresistance effect were investigated with a broadband approach. Varying the Pt layer thickness gives rise to an evolution of the voltage line shape due to the superposition of the above two effects. By studying the ratio of the two voltage components with the Pt layer thickness, the spin diffusion length of Pt can be directly extracted. We obtain a spin diffusion length of ∼1.2 nm at room temperature and ∼1.6 nm at 8 K.

  15. Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

    International Nuclear Information System (INIS)

    Granovsky, A.B.; Inoue, Mitsuteru

    2004-01-01

    We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling

  16. Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Granovsky, A.B. E-mail: granov@magn.ru; Inoue, Mitsuteru

    2004-05-01

    We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling.

  17. Investigation of structure and magnetoresistance in Co/ZnO films

    International Nuclear Information System (INIS)

    Quan Zhiyong; Xu Xiaohong; Li Xiaoli; Feng, Q.; Gehring, G. A.

    2010-01-01

    Co/ZnO films were deposited on glass substrates by magnetron sputtering at room temperature. The structure of the as-deposited films is studied by means of x-ray diffraction, x-ray photoelectron spectroscopy, and the zero-field-cooled and field-cooled magnetization curves. It is shown that the as-deposited samples consist of a mixture of regions of metallic Co and semiconducting ZnO. Large negative magnetoresistance of 26% and 11.9% are observed in the as-deposited Co/ZnO film with Co concentration of 50.7 at. % at 10 K and room temperature, respectively. Structural analysis, the temperature dependence of the conductivity and magnetoresistance reveal that the magnetoresistance is induced by spin-dependent tunneling between regions of conducting magnetic Co through the ZnO semiconducting barriers. The enhanced magnetoresistance in the low temperature regime may be related to the existence of higher-order tunneling processes between large Co regions mediated by small Co particles.

  18. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Rungger, I.; Sanvito, S.; Schwingenschlö gl, Udo

    2016-01-01

    for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we

  19. Magnetoresistance effect in permalloy nanowires with various types of notches

    Directory of Open Access Journals (Sweden)

    Y. Gao

    2018-05-01

    Full Text Available Suppressing the stochastic domain wall (DW motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller change of resistance always corresponds to larger (smaller depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.

  20. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur

    2010-05-03

    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Anisotropic magnetoresistance components in (Ga,Mn)As.

    Science.gov (United States)

    Rushforth, A W; Výborný, K; King, C S; Edmonds, K W; Campion, R P; Foxon, C T; Wunderlich, J; Irvine, A C; Vasek, P; Novák, V; Olejník, K; Sinova, Jairo; Jungwirth, T; Gallagher, B L

    2007-10-05

    We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.

  2. Magnetoresistance effect in permalloy nanowires with various types of notches

    Science.gov (United States)

    Gao, Y.; You, B.; Wang, J.; Yuan, Y.; Wei, L. J.; Tu, H. Q.; Zhang, W.; Du, J.

    2018-05-01

    Suppressing the stochastic domain wall (DW) motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR) measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller) change of resistance always corresponds to larger (smaller) depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.

  3. Extremely large magnetoresistance and electronic structure of TmSb

    Science.gov (United States)

    Wang, Yi-Yan; Zhang, Hongyun; Lu, Xiao-Qin; Sun, Lin-Lin; Xu, Sheng; Lu, Zhong-Yi; Liu, Kai; Zhou, Shuyun; Xia, Tian-Long

    2018-02-01

    We report the magnetotransport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at the X point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.

  4. Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2.

    Science.gov (United States)

    Zhang, Enze; Chen, Rui; Huang, Ce; Yu, Jihai; Zhang, Kaitai; Wang, Weiyi; Liu, Shanshan; Ling, Jiwei; Wan, Xiangang; Lu, Hai-Zhou; Xiu, Faxian

    2017-02-08

    Transitional metal ditelluride WTe 2 has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe 2 . Here, we report a successful synthesis of mono- to few-layer WTe 2 via chemical vapor deposition. Using atomically thin WTe 2 nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe 2 from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin-orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe 2 as a promising platform for exotic electronic and spintronic device applications.

  5. Anomalously large anisotropic magnetoresistance in a perovskite manganite

    Science.gov (United States)

    Li, Run-Wei; Wang, Huabing; Wang, Xuewen; Yu, X. Z.; Matsui, Y.; Cheng, Zhao-Hua; Shen, Bao-Gen; Plummer, E. Ward; Zhang, Jiandi

    2009-01-01

    The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La0.69Ca0.31MnO3, leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a “colossal” AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings. PMID:19706504

  6. Transient charging and discharging of spin-polarized electrons in a quantum dot

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Leao, S.A.; Gester, R. M.

    2007-01-01

    We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green ...

  7. Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

    Science.gov (United States)

    Song, Yipu; Schmitt, Andrew L; Jin, Song

    2008-08-01

    Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

  8. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  9. Handbook of spin transport and magnetism

    CERN Document Server

    Tsymbal, Evgeny Y

    2011-01-01

    In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grünberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, balanced account of the state of the art in the field known as spin electronics or spintronics. It reveals how key phenomena first discovered in one class of materials, such as spin injection in metals, have been revisited decades later in other materia

  10. Magnetoresistive biosensors for quantitative proteomics

    Science.gov (United States)

    Zhou, Xiahan; Huang, Chih-Cheng; Hall, Drew A.

    2017-08-01

    Quantitative proteomics, as a developing method for study of proteins and identification of diseases, reveals more comprehensive and accurate information of an organism than traditional genomics. A variety of platforms, such as mass spectrometry, optical sensors, electrochemical sensors, magnetic sensors, etc., have been developed for detecting proteins quantitatively. The sandwich immunoassay is widely used as a labeled detection method due to its high specificity and flexibility allowing multiple different types of labels. While optical sensors use enzyme and fluorophore labels to detect proteins with high sensitivity, they often suffer from high background signal and challenges in miniaturization. Magnetic biosensors, including nuclear magnetic resonance sensors, oscillator-based sensors, Hall-effect sensors, and magnetoresistive sensors, use the specific binding events between magnetic nanoparticles (MNPs) and target proteins to measure the analyte concentration. Compared with other biosensing techniques, magnetic sensors take advantage of the intrinsic lack of magnetic signatures in biological samples to achieve high sensitivity and high specificity, and are compatible with semiconductor-based fabrication process to have low-cost and small-size for point-of-care (POC) applications. Although still in the development stage, magnetic biosensing is a promising technique for in-home testing and portable disease monitoring.

  11. Huge magnetoresistance effect of highly oriented pyrolytic graphite

    International Nuclear Information System (INIS)

    Du Youwei; Wang Zhiming; Ni Gang; Xing Dingyu; Xu Qingyu

    2004-01-01

    Graphite is a quasi-two-dimensional semimetal. However, for usual graphite the magnetoresistance is not so high due to its small crystal size and no preferred orientation. Huge positive magnetoresistance up to 85300% at 4.2 K and 4950% at 300 K under 8.15 T magnetic field was found in highly oriented pyrolytic graphite. The mechanism of huge positive magnetoresistance is not only due to ordinary magnetoresistance but also due to magnetic-field-driven semimetal-insulator transition

  12. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    OpenAIRE

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...

  13. Piezoelectric valve

    Science.gov (United States)

    Petrenko, Serhiy Fedorovich

    2013-01-15

    A motorized valve has a housing having an inlet and an outlet to be connected to a pipeline, a saddle connected with the housing, a turn plug having a rod, the turn plug cooperating with the saddle, and a drive for turning the valve body and formed as a piezoelectric drive, the piezoelectric drive including a piezoelectric generator of radially directed standing acoustic waves, which is connected with the housing and is connectable with a pulse current source, and a rotor operatively connected with the piezoelectric generator and kinematically connected with the rod of the turn plug so as to turn the turn plug when the rotor is actuated by the piezoelectric generator.

  14. Antiferromagnetic spin-orbitronics

    KAUST Repository

    Manchon, Aurelien; Saidaoui, Hamed Ben Mohamed; Ghosh, Sumit

    2015-01-01

    Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

  15. Antiferromagnetic spin-orbitronics

    KAUST Repository

    Manchon, Aurelien

    2015-05-01

    Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

  16. Injection and Scattering of Polarized Spins at Nanoscale Polymer Interfaces

    National Research Council Canada - National Science Library

    Epstein, Arthur J

    2004-01-01

    We made excellent progress several directions. We demonstrated that V[TCNE]̃2 is a room temperature fully spin polarized magnetic semiconductor of interest for spintronic applications, including spin valves...

  17. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  18. A giant magnetoresistance ring-sensor based microsystem for magnetic bead manipulation and detection

    KAUST Repository

    Gooneratne, Chinthaka P.

    2011-03-28

    In this paper a novel spin valvegiant magnetoresistance(GMR) ring-sensor integrated with a microstructure is proposed for concentrating, trapping, and detecting superparamagnetic beads (SPBs). Taking advantage of the fact that SPBs can be manipulated by an external magnetic field, a unique arrangement of conducting microrings is utilized to manipulate the SPBs toward the GMR sensing area in order to increase the reliability of detection. The microrings are arranged and activated in such a manner so as to enable the detection of minute concentrations of SPBs in a sample. Precise manipulation is achieved by applying current sequentially to the microrings. The fabricated ring-shaped GMR element is located underneath the innermost ring and has a magnetoresistance of approximately 5.9%. By the performed experiments it was shown that SPBs could be successfully manipulated toward the GMR sensing zone.

  19. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

    2016-03-15

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  20. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  1. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.; Mi, W. B.; Zhang, Xixiang

    2016-01-01

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  2. A giant magnetoresistance ring-sensor based microsystem for magnetic bead manipulation and detection

    KAUST Repository

    Gooneratne, Chinthaka P.; Giouroudi, Ioanna; Liang, Cai; Kosel, Jü rgen

    2011-01-01

    In this paper a novel spin valvegiant magnetoresistance(GMR) ring-sensor integrated with a microstructure is proposed for concentrating, trapping, and detecting superparamagnetic beads (SPBs). Taking advantage of the fact that SPBs can be manipulated by an external magnetic field, a unique arrangement of conducting microrings is utilized to manipulate the SPBs toward the GMR sensing area in order to increase the reliability of detection. The microrings are arranged and activated in such a manner so as to enable the detection of minute concentrations of SPBs in a sample. Precise manipulation is achieved by applying current sequentially to the microrings. The fabricated ring-shaped GMR element is located underneath the innermost ring and has a magnetoresistance of approximately 5.9%. By the performed experiments it was shown that SPBs could be successfully manipulated toward the GMR sensing zone.

  3. Large magnetization and frustration switching of magnetoresistance in the double-perovskite ferrimagnet Mn2FeReO6.

    Science.gov (United States)

    Arévalo-López, Angel M; McNally, Graham M; Attfield, J Paul

    2015-10-05

    Ferrimagnetic A2 BB'O6 double perovskites, such as Sr2 FeMoO6 , are important spin-polarized conductors. Introducing transition metals at the A-sites offers new possibilities to increase magnetization and tune magnetoresistance. Herein we report a ferrimagnetic double perovskite, Mn2 FeReO6 , synthesized at high pressure which has a high Curie temperature of 520 K and magnetizations of up to 5.0 μB which greatly exceed those for other double perovskite ferrimagnets. A novel switching transition is discovered at 75 K where magnetoresistance changes from conventional negative tunneling behavior to large positive values, up to 265 % at 7 T and 20 K. Neutron diffraction shows that the switch is driven by magnetic frustration from antiferromagnetic Mn(2+) spin ordering which cants Fe(3+) and Re(5+) spins and reduces spin-polarization. Ferrimagnetic double perovskites based on A-site Mn(2+) thus offer new opportunities to enhance magnetization and control magnetoresistance in spintronic materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. On the magnetoresistance of heavy fermion compounds

    International Nuclear Information System (INIS)

    Lee Chengchung; Chen Chung

    1992-09-01

    Starting from two-conduction-band Anderson lattice model, the magneto-transport properties of heavy fermion systems are studied in the slave boson mean field theory. The residual magnetoresistivity induced by different kinds of impurities is calculated, and the experimentally detected positive maximum structure in the residual magnetoresistance of heavy fermion systems is reproduced. The transition of field-dependent resistivity from nonmonotonic to monotonic behaviour with increasing temperature can be explained naturally by including the charge fluctuation effect. The influence of applied pressure is also investigated. (author). 22 refs, 5 figs

  5. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  6. TOPICAL REVIEW: Tunneling magnetoresistance from a symmetry filtering effect

    Directory of Open Access Journals (Sweden)

    William H Butler

    2008-01-01

    Full Text Available This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe–MgO–Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory.

  7. Magnetoresistance of rolled-up Fe3Si nanomembranes.

    Science.gov (United States)

    Schumann, J; Lisunov, K G; Escoffier, W; Raquet, B; Broto, J M; Arushanov, E; Mönch, I; Makarov, D; Deneke, C; Schmidt, O G

    2012-06-29

    Magnetotransport of individual rolled-up Fe(3)Si nanomembranes is investigated in a broad temperature range from 4.2 K up to 300 K in pulsed magnetic fields up to 55 T. The observed magnetoresistance (MR) has the following pronounced features: (i) MR is negative in the investigated intervals of temperature and magnetic field; (ii) its magnitude increases linearly with the magnetic field in a low-field region and reveals a gradual trend to saturation when the magnetic field increases; (iii) the MR effect becomes more pronounced with increasing temperature. These dependences of MR on the magnetic field and temperature are in line with predictions of the spin-disorder model of the spin-flip s-d interaction assisted with creation or annihilation of magnons, which is expected above a certain critical temperature. Comparison of the MR features in rolled-up and planar samples reveals a substantial increase of the critical temperature in the rolled-up tube, which is attributed to a new geometry and internal strain arising in the rolled-up nanomembranes, influencing the electronic and magnetic properties of the material.

  8. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    International Nuclear Information System (INIS)

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-01-01

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

  9. Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

    International Nuclear Information System (INIS)

    Kumaresavanji, M.; Fontes, M.B.

    2010-01-01

    The La 1.32 Sr 1.68 Mn 2 O 7 layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T C ) and a metal-insulator transition (T MI ) at 118 K in the ambient pressure. The applied pressure shifts the T MI to higher temperature values and induces a second metal-insulator transition (T 2 MI ) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T C . When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.

  10. Robust giant magnetoresistive effect type multilayer sensor

    NARCIS (Netherlands)

    Lenssen, K.M.H.; Kuiper, A.E.T.; Roozeboom, F.

    2002-01-01

    A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables

  11. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, J.P.J.

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the information on the

  12. Enhanced temperature-independent magnetoresistance below the ...

    Indian Academy of Sciences (India)

    The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature c = 250 K. The ZFC ...

  13. Aortic valve bypass

    DEFF Research Database (Denmark)

    Lund, Jens T; Jensen, Maiken Brit; Arendrup, Henrik

    2013-01-01

    In aortic valve bypass (AVB) a valve-containing conduit is connecting the apex of the left ventricle to the descending aorta. Candidates are patients with symptomatic aortic valve stenosis rejected for conventional aortic valve replacement (AVR) or transcatheter aortic valve implantation (TAVI). ...

  14. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  15. Damping constant measurement and inverse giant magnetoresistance in spintronic devices with Fe4N

    Directory of Open Access Journals (Sweden)

    Xuan Li

    2017-12-01

    Full Text Available Fe4N is one of the attractive materials for spintronic devices due to its large spin asymmetric conductance and negative spin polarization at the Fermi level. We have successfully deposited Fe4N thin film with (001 out-of-plane orientation using a DC facing-target-sputtering system. A Fe(001/Ag(001 composite buffer layer is selected to improve the (001 orientation of the Fe4N thin film. The N2 partial pressure during sputtering is optimized to promote the formation of Fe4N phase. Moreover, we have measured the ferromagnetic resonance (FMR of the (001 oriented Fe4N thin film using coplanar waveguides and microwave excitation. The resonant fields are tested under different microwave excitation frequencies, and the experimental results match well with the Kittel formula. The Gilbert damping constant of Fe4N is determined to be α = 0.021±0.02. We have also fabricated and characterized the current-perpendicular-to-plane (CPP giant magnetoresistance (GMR device with Fe4N/Ag/Fe sandwich. Inverse giant magnetoresistance is observed in the CPP GMR device, which suggests that the spin polarization of Fe4N and Fe4N/Ag interface is negative.

  16. Transcatheter aortic valve replacement

    Science.gov (United States)

    ... gov/ency/article/007684.htm Transcatheter aortic valve replacement To use the sharing features on this page, please enable JavaScript. Transcatheter aortic valve replacement (TAVR) is surgery to replace the aortic valve. ...

  17. Spin Transfer Torque in Graphene

    Science.gov (United States)

    Lin, Chia-Ching; Chen, Zhihong

    2014-03-01

    Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

  18. Magnetically operated check valve

    Science.gov (United States)

    Morris, Brian G.; Bozeman, Richard J., Jr.

    1994-06-01

    A magnetically operated check valve is disclosed. The valve is comprised of a valve body and a movable poppet disposed therein. A magnet attracts the poppet to hold the valve shut until the force of fluid flow through the valve overcomes the magnetic attraction and moves the poppet to an unseated, open position. The poppet and magnet are configured and disposed to trap a magnetically attracted particulate and prevent it from flowing to a valve seating region.

  19. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  20. High magnetoresistance at low magnetic fields in self-assembled ZnO-Co nanocomposite films.

    Science.gov (United States)

    Jedrecy, N; Hamieh, M; Hebert, C; Perriere, J

    2017-07-27

    The solid phase growth of self-assembled nanocrystals embedded in a crystalline host matrix opens up wide perspectives for the coupling of different physical properties, such as magnetic and semiconducting. In this work, we report the pulsed laser growth at room temperature of thin films composed of a dispersed array of ferromagnetic Co (0001) nanoclusters with an in-plane mono-size width of 1.3 nm, embedded in a ZnO (0001) crystalline matrix. The as-grown films lead to very high values of magnetoresistance, ranging at 9 T from -11% at 300 K to -19% at 50 K, with a steep decrease of the magnetoresistance at low magnetic fields. We establish the relationship between the magnetoresistance behavior and the magnetic response of the Co nanocluster assembly. A spin-dependent tunneling of the electrons between the Co nanoclusters through and by the semi-insulating ZnO host is achieved in our films, promising with regard to magnetic field sensors or Si-integrated spintronic devices. The effects of thermal annealing are also discussed.

  1. Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance

    Czech Academy of Sciences Publication Activity Database

    Kovalev, A.A.; Tserkovnyak, Y.; Výborný, Karel; Sinova, J.

    2009-01-01

    Roč. 79, č. 19 (2009), 19529/1-19529/19 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KJB100100802 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic materials * Hall effect * magnetoresistance * quasiparticles * spin-orbit interactions * two-dimensional electro n gas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.195129

  2. Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model

    Science.gov (United States)

    Yahagi, Y.; Miura, D.; Sakuma, A.

    2018-05-01

    We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin-orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.

  3. Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO{sub 3} insulator

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, C.; Jia, Q.X.; Fan, Y.; Hundley, M.F.; Reagor, D.W.; Hawley, M.E.; Peterson, D.E.

    1998-07-01

    The authors report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La{sub 0.7}Sr{sub 0.3})MnO{sub 3} ferromagnetic electrodes and a SrTiO{sub 3} insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T < 100 K).

  4. Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

    Science.gov (United States)

    Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

    Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

  5. What Is Heart Valve Surgery?

    Science.gov (United States)

    ... working correctly. Most valve replacements involve the aortic Tricuspid valve and mitral valves. The aortic valve separates ... where it shouldn’t. This is called incompetence, insufficiency or regurgitation. • Prolapse — mitral valve flaps don’t ...

  6. What Is Heart Valve Disease?

    Science.gov (United States)

    ... and replacing it with a man-made or biological valve. Biological valves are made from pig, cow, or human ... the valve. Man-made valves last longer than biological valves and usually don’t have to be ...

  7. New materials research for high spin polarized current

    International Nuclear Information System (INIS)

    Tezuka, Nobuki

    2012-01-01

    The author reports here a thorough investigation of structural and magnetic properties of Co 2 FeAl 0.5 Si 0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co 2 FeAl 0.5 Si 0.5 electrodes, spin injection into GaAs semiconductor from Co 2 FeAl 0.5 Si 0.5 , and spin filtering phenomena for junctions with CoFe 2 O 4 ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co 2 FeAl 0.5 Si 0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co 2 FeAl 0.5 Si 0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co 2 FeAl 0.5 Si 0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co 2 FeAl 0.5 Si 0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.

  8. High-Frequency Dynamics Modulated by Collective Magnetization Reversal in Artificial Spin Ice

    Science.gov (United States)

    Jungfleisch, Matthias B.; Sklenar, Joseph; Ding, Junjia; Park, Jungsik; Pearson, John E.; Novosad, Valentine; Schiffer, Peter; Hoffmann, Axel

    2017-12-01

    Spin-torque ferromagnetic resonance arises in heavy metal-ferromagnet heterostructures when an alternating charge current is passed through the bilayer stack. The methodology to detect the resonance is based on the anisotropic magnetoresistance, which is the change in the electrical resistance due to different orientations of the magnetization. In connected networks of ferromagnetic nanowires, known as artificial spin ice, the magnetoresistance is rather complex owing to the underlying collective behavior of the geometrically frustrated magnetic domain structure. Here, we demonstrate spin-torque ferromagnetic resonance investigations in a square artificial spin-ice system and correlate our observations to magnetotransport measurements. The experimental findings are described using a simulation approach that highlights the importance of the correlated dynamics response of the magnetic system. Our results open the possibility of designing reconfigurable microwave oscillators and magnetoresistive devices based on connected networks of nanomagnets.

  9. High-Frequency Dynamics Modulated by Collective Magnetization Reversal in Artificial Spin Ice

    Energy Technology Data Exchange (ETDEWEB)

    Jungfleisch, Matthias B.; Sklenar, Joseph; Ding, Junjia; Park, Jungsik; Pearson, John E.; Novosad, Valentine; Schiffer, Peter; Hoffmann, Axel

    2017-12-01

    Spin-torque ferromagnetic resonance arises in heavy metal-ferromagnet heterostructures when an alternating charge current is passed through the bilayer stack. The methodology to detect the resonance is based on the anisotropic magnetoresistance, which is the change in the electrical resistance due to different orientations of the magnetization. In connected networks of ferromagnetic nanowires, known as artificial spin ice, the magnetoresistance is rather complex owing to the underlying collective behavior of the geometrically frustrated magnetic domain structure. Here, we demonstrate spin-torque ferromagnetic resonance investigations in a square artificial spin-ice system and correlate our observations to magneto-transport measurements. The experimental findings are described using a simulation approach that highlights the importance of the correlated dynamics response of the magnetic system. Our results open the possibility of designing reconfigurable microwave oscillators and magnetoresistive devices based on connected networks of nanomagnets.

  10. Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

    NARCIS (Netherlands)

    Jansen, R.; Lodder, J.C.

    2000-01-01

    Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

  11. Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devices.

    Science.gov (United States)

    Kamerbeek, Alexander M; Ruiter, Roald; Banerjee, Tamalika

    2018-01-22

    There is a large effort in research and development to realize electronic devices capable of storing information in new ways - for instance devices which simultaneously exhibit electro and magnetoresistance. However it remains a challenge to create devices in which both effects coexist. In this work we show that the well-known electroresistance in noble metal-Nb:SrTiO 3 Schottky junctions can be augmented by a magnetoresistance effect in the same junction. This is realized by replacing the noble metal electrode with ferromagnetic Co. This magnetoresistance manifests as a room temperature tunneling anisotropic magnetoresistance (TAMR). The maximum room temperature TAMR (1.6%) is significantly larger and robuster with bias than observed earlier, not using Nb:SrTiO 3 . In a different set of devices, a thin amorphous AlO x interlayer inserted between Co and Nb:SrTiO 3 , reduces the TAMR by more than 2 orders of magnitude. This points to the importance of intimate contact between the Co and Nb:SrTiO 3 for the TAMR effect. This is explained by electric field enhanced spin-orbit coupling of the interfacial Co layer in contact with Nb:SrTiO 3 . We propose that the large TAMR likely has its origin in the 3d orbital derived conduction band and large relative permittivity of Nb:SrTiO 3 and discuss ways to further enhance the TAMR.

  12. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

    Science.gov (United States)

    Zhang, Han; Ye, Meng; Wang, Yangyang; Quhe, Ruge; Pan, Yuanyuan; Guo, Ying; Song, Zhigang; Yang, Jinbo; Guo, Wanlin; Lu, Jing

    2016-06-28

    Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.

  13. Spin currents in metallic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Czeschka, Franz Dominik

    2011-09-05

    A pure spin current, i.e., a flow of angular momentum without accompanying net charge current, is a key ingredient in the field of spintronics. In this thesis, we experimentally investigated two different concepts for pure spin current sources suggested by theory. The first is based on a time-dependent magnetization precession which ''pumps'' a pure spin current into an adjacent non-magnetic conductor. Our experiments quantitatively corroborated important predictions expected theoretically for this approach, including the dependence of the spin current on the sample geometry and the microwave power. Even more important, we could show for the first time that the spin pumping concept is viable in a large variety of ferromagnetic materials and that it only depends on the magnetization damping. Therefore, our experiments established spin pumping as generic phenomenon and demonstrated that it is a powerful way to generate pure spin currents. The second theoretical concept is based on the conversion of charge currents into spin currents in non-magnetic nanostructures via the spin Hall effect. We experimentally investigated this approach in H-shaped, metallic nanodevices, and found that the predictions are linked to requirements not realizable with the present experimental techniques, neither in sample fabrication nor in measurement technique. Indeed, our experimental data could be consistently understood by a spin-independent transport model describing the transition from diffusive to ballistic transport. In addition, the implementation of advanced fabrication and measurement techniques allowed to discover a new non-local phenomenon, the non-local anisotropic magnetoresistance. Finally, we also studied spin-polarized supercurrents carried by spin-triplet Cooper pairs. We found that low resistance interfaces are a key requirement for further experiments in this direction. (orig.)

  14. Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

    International Nuclear Information System (INIS)

    Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

    2012-01-01

    Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

  15. Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors

    Science.gov (United States)

    Harmon, N. J.; Flatté, M. E.

    2012-02-01

    A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their line shapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.

  16. Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices.

    Science.gov (United States)

    Aragonès, Albert C; Aravena, Daniel; Valverde-Muñoz, Francisco J; Real, José Antonio; Sanz, Fausto; Díez-Pérez, Ismael; Ruiz, Eliseo

    2017-04-26

    The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single-molecule electrical contact at room temperature. The single-molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their Fermi levels for one of the electronic spins only. The key ingredient for the metal surface is to provide an efficient spin texture induced by the spin-orbit coupling in the topological surface states that results in an efficient spin-dependent interaction with the orbitals of the molecule. The strong magnetoresistance effect found in this kind of single-molecule wire opens a new approach for the design of room-temperature nanoscale devices based on spin-polarized currents controlled at molecular level.

  17. The magnetization dynamics of nano-contact spin-torque vortex oscillators

    Science.gov (United States)

    Keatley, Paul

    The operation of nano-contact (NC) spin-torque vortex oscillators (STVOs) is underpinned by vortex gyration in response to spin-torque delivered by high density current passing through the magnetic layers of a spin valve. Gyration directly beneath the NC yields radio frequency (RF) emission through the giant magnetoresistance (GMR) effect, which can be readily detected electronically. The magnetization dynamics that extend beyond the NC perimeter contribute little to the GMR signal, but are crucial for synchronization of multiple NC-STVOs that share the same spin valve film. In this work time-resolved scanning Kerr microscopy (TRSKM) was used to directly image the extended dynamics of STVOs phase-locked to an injected RF current. In this talk the dynamics of single 250-nm diameter NCs, and a pair of 100-nm diameter NCs, will be presented. In general the Kerr images reveal well-defined localized and far-field dynamics, driven by spin-torque and RF current Oersted fields respectively. The RF frequency, RF Oersted field, direction of an in-plane magnetic field, and equilibrium magnetic state, all influenced the spatial character of the dynamics observed in single NCs. In the pair of NCs, two modes were observed in the RF emission. Kerr images revealed that a vortex was formed beneath each NC and that the mode with enhanced spectral amplitude and line quality appeared to be correlated with two localized regions oscillating with similar amplitude and phase, while a second weaker mode exhibited amplitude and phase differences. This suggests that the RF emission was generated by collective modes of vortex gyration dynamically coupled via magnetization dynamics and dipolar interactions of the shared magnetic layers. Within the constraints of injection locking, this work demonstrates that TRSKM can provide valuable insight into the spatial character and time-evolution of magnetization dynamics generated by NC-STVOs and the conditions that may favor their synchronization

  18. Influence of soliton distributions on the spin-dependent electronic ...

    Indian Academy of Sciences (India)

    Based on Su–Schrieffer–Heeger (SSH) Hamiltonian and using a generalized Green's function formalism, wecalculate the spin-dependent currents, the electronic transmission and tunnelling magnetoresistance (TMR). We found that the presence of a uniform distribution of the soliton centres along the molecular chain ...

  19. Microfluidic sieve valves

    Science.gov (United States)

    Quake, Stephen R; Marcus, Joshua S; Hansen, Carl L

    2015-01-13

    Sieve valves for use in microfluidic device are provided. The valves are useful for impeding the flow of particles, such as chromatography beads or cells, in a microfluidic channel while allowing liquid solution to pass through the valve. The valves find particular use in making microfluidic chromatography modules.

  20. Rotary pneumatic valve

    Science.gov (United States)

    Hardee, Harry C.

    1991-01-01

    A rotary pneumatic valve which is thrust balanced and the pneumatic pressure developed produces only radial loads on the valve cylinder producing negligible resistance and thus minimal torque on the bearings of the valve. The valve is multiplexed such that at least two complete switching cycles occur for each revolution of the cylinder spindle.

  1. Mitral Valve Stenosis

    Science.gov (United States)

    ... the left ventricle from flowing backward. A defective heart valve fails to either open or close fully. Risk factors Mitral valve stenosis is less common today than it once was because the most common cause, ... other heart valve problems, mitral valve stenosis can strain your ...

  2. Aortic Valve Stenosis

    Science.gov (United States)

    ... most cases, doctors don't know why a heart valve fails to develop properly, so it isn't something you could have prevented. Calcium buildup on the valve. With age, heart valves may accumulate deposits of calcium (aortic valve ...

  3. Remote actuated valve implant

    Science.gov (United States)

    McKnight, Timothy E; Johnson, Anthony; Moise, Jr., Kenneth J; Ericson, Milton Nance; Baba, Justin S; Wilgen, John B; Evans, III, Boyd McCutchen

    2014-02-25

    Valve implant systems positionable within a flow passage, the systems having an inlet, an outlet, and a remotely activatable valve between the inlet and outlet, with the valves being operable to provide intermittent occlusion of the flow path. A remote field is applied to provide thermal or magnetic activation of the valves.

  4. Scissor thrust valve actuator

    Science.gov (United States)

    DeWall, Kevin G.; Watkins, John C; Nitzel, Michael E.

    2006-08-29

    Apparatus for actuating a valve includes a support frame and at least one valve driving linkage arm, one end of which is rotatably connected to a valve stem of the valve and the other end of which is rotatably connected to a screw block. A motor connected to the frame is operatively connected to a motor driven shaft which is in threaded screw driving relationship with the screw block. The motor rotates the motor driven shaft which drives translational movement of the screw block which drives rotatable movement of the valve driving linkage arm which drives translational movement of the valve stem. The valve actuator may further include a sensory control element disposed in operative relationship with the valve stem, the sensory control element being adapted to provide control over the position of the valve stem by at least sensing the travel and/or position of the valve stem.

  5. Magnetoresistance in cobalt-contacted multi-wall carbon nanotubes

    International Nuclear Information System (INIS)

    Vinzelberg, H.; Zhao, B.; Moench, I.; Schumann, J.; Schneider, C.M.

    2005-01-01

    We present results for magnetotransport measurements on multiwall-carbon nanotubes (MWCNT) contacted by cobalt electrodes. By measuring the V(I) characteristics at constant magnetic fields and different orientation of the magnetization directions in the Co electrodes, we were able to determine both current and voltage dependences of the magnetoresistance (MR) effects. These tunneling MR values are compared with the directly measured MR at constant current with sweeping magnetic field. The V(I) curves show an ohmic behavior at 295 K and a non-linear tunneling behavior at 4.2 K. With decreasing bias current the MR increased up to 60% at 4.2 K, and with decreasing bias voltages even up to 175%. The MR disappears at high bias current (voltages) and temperatures higher than 40 K. For most of the samples the current dependences of the MR were found to be nearly symmetric upon reversing the current direction. However, in some cases we also observed a sign change of the MR as function of the applied current, which suggests an inversion of the spin polarization in one of the Co interfaces

  6. Magnetoresistance in CePtSn under high hydrostatic pressures

    International Nuclear Information System (INIS)

    Misek, M.; Prokleska, J.; Javorsky, P.; Sechovsky, V.

    2009-01-01

    We report the evolution of magnetic-history dependent antiferromagnetic phases in CePtSn. We concentrate on the magnetoresistance in magnetic fields up to 14 T applied along the crystallographic b-axis, measured on a CePtSn single crystal subjected to hydrostatic pressure (p ≤ 2.2 GPa) generated in a double-layered CuBe/NiCrAl piston cylinder cell. We observe a gradual increase of the critical field B c LF of the low field (LF) transition up to ∼1.2 GPa where only one transition is observed at ∼11.5 T. For pressures above 1.2 GPa we observe two transitions again and B c LF decreases with further increasing pressure to reach B c LF ∼7.5T at 2.5 GPa. The position of the high field (HF) transition remains almost unaffected by applied pressure. A scenario considering the spin-slip AF structure in CePtSn is briefly discussed.

  7. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    International Nuclear Information System (INIS)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-01-01

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

  8. Colossal Terahertz Magnetoresistance at Room Temperature in Epitaxial La0.7Sr0.3MnO3 Nanocomposites and Single-Phase Thin Films.

    Science.gov (United States)

    Lloyd-Hughes, J; Mosley, C D W; Jones, S P P; Lees, M R; Chen, A; Jia, Q X; Choi, E-M; MacManus-Driscoll, J L

    2017-04-12

    Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7 Sr 0.3 MnO 3 . At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. The VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.

  9. Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

    Directory of Open Access Journals (Sweden)

    Zein W. A.

    2008-01-01

    Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic / superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

  10. Spin-polarized inelastic tunneling through insulating barriers.

    Science.gov (United States)

    Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

    2009-05-01

    Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

  11. Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

    Directory of Open Access Journals (Sweden)

    Zein W. A.

    2008-01-01

    Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic/superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

  12. Spin-accumulation effect in magnetic nano-bridge

    International Nuclear Information System (INIS)

    Khvalkovskii, A.V.; Zvezdin, A.A.; Zvezdin, K.A.; Pullini, D.; Perlo, P.

    2004-01-01

    Large values of magnetoresistance experimentally observed in magnetic nano-contacts and nano-wires are explained in terms of spin accumulation. The investigation of the spin-accumulation effect in magnetic nano-contacts (Phys. Rev. Lett. 82 (1999) 2923) and nano-bridges (JETP Lett. 75 (10) (2002) 613), which are considered to be very promising for various spintronic applications, is presented. The two-dimensional spin-diffusion problem in a magnetic nano-bridge is solved. Dependences of the specific resistance of the domain wall and of the distribution of non-equilibrium spin density on the nano-bridge geometry and the material parameters are obtained

  13. Four-state ferroelectric spin-valve

    Czech Academy of Sciences Publication Activity Database

    Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

    2015-01-01

    Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

  14. Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization

    Science.gov (United States)

    Zare, Moslem; Majidi, Leyla; Asgari, Reza

    2017-03-01

    We theoretically investigate the unusual features of the magnetotransport in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure. We find that the charge conductance can feature a minimum at parallel (P) configuration and a maximum near the antiparallel (AP) configuration of magnetization in the F/N/F structure with n -doped F and p -doped N regions and also a finite conductance in the AP configuration with the N region of n -type doping. In particular, the proposed structure exhibits giant magnetoresistance, which can be tuned to unity. This perfect switching is found to show strong robustness with respect to increasing the contact length and tuning the chemical potential of the N region with a gate voltage. We also explore the oscillatory behavior of the charge conductance or magnetoresistance in terms of the size of the N region. We further demonstrate the penetration of the spin-transfer torque into the right F region and show that, unlike graphene structure, the spin-transfer torque is very sensitive to the chemical potential of the N region as well as the exchange field of the F region.

  15. The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads

    International Nuclear Information System (INIS)

    Weymann, Ireneusz

    2010-01-01

    We analyze numerically the spin-dependent transport through coherent chains of three coupled quantum dots weakly connected to external magnetic leads. In particular, using the diagrammatic technique on the Keldysh contour, we calculate the conductance, shot noise and tunnel magnetoresistance (TMR) in the sequential and cotunneling regimes. We show that transport characteristics greatly depend on the strength of the interdot Coulomb correlations, which determines the spatial distribution of the electron wavefunction in the chain. When the correlations are relatively strong, depending on the transport regime, we find both negative TMR as well as TMR enhanced above the Julliere value, accompanied with negative differential conductance (NDC) and super-Poissonian shot noise. This nontrivial behavior of tunnel magnetoresistance is associated with selection rules that govern tunneling processes and various high-spin states of the chain that are relevant for transport. For weak interdot correlations, on the other hand, the TMR is always positive and not larger than the Julliere TMR, although super-Poissonian shot noise and NDC can still be observed.

  16. Thermoelectric effects and spin injection into superconductors with exchange field

    Energy Technology Data Exchange (ETDEWEB)

    Heikkilae, Tero [Dept. Phys., Univ. Jyvaeskylae (Finland); Silaev, Mihail [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Dept. Theor. Physics, KTH, Stockholm (Sweden); Virtanen, Pauli [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Giazotto, Francesco [NEST CNR-INFM and SNS Pisa (Italy); Ozaeta, Asier; Bergeret, Sebastian [CFM-CSIC and DIPC, San Sebastian (Spain)

    2015-07-01

    When a thin superconducting film is exposed to a longitudinal magnetic field or is in proximity to a ferromagnet, an exchange field separating the spin bands emerges in it. For low enough exchange fields superconductivity survives, but its response to external driving is strongly modified. In my talk I will show how at linear response such systems exhibit very strong thermoelectric response with an almost ideal efficiency. For strong driving, this effect creates a spin accumulation that can only relax via thermalization, and therefore at low temperatures has a very long range. Therefore our work explains recent observations of the long-range spin accumulation in spin-split superconductors. When injecting spin from injectors with non-collinear magnetization compared to the exchange field, the spins start to rotate around the latter. I will describe how superconductivity modifies this spin Hanle effect so that the resulting nonlocal magnetoresistance depends on the details of spin relaxation, therefore allowing for probing them.

  17. Angular dependencies of longitudinal magnetoresistivity and planar Hall effect of single and multilayered thin films

    International Nuclear Information System (INIS)

    Ko, T.W.; Lee, J.H.; Park, B.K.; Rhie, K.; Jang, P.W.; Hwang, D.G.; Lee, S.S.; Kim, M.Y.; Rhee, J.R.

    1998-01-01

    Magnetoresistivity and planar Hall effect of a Glass/Fe70A/[Co21A/Cu25A] 20 multilayer coupled antiferromagnetically a single layer (Co81Nb19) thin film, and NiO based Glass/Ni350A/Py50A/Cu20A/Py50A (Py = Ni 83 Fe 17 ) spin value are studied. Planar Hall resistivity is analysed concurrently with the resistivity of the sample. With variation of direction and strength of the applied fields, we found that the magnetization process affects significantly the planar Hall effect. We developed a simple method to find the easy axis of single layer magnetic thin films. We also observed the variation of magnetization of each layer separately for an antiferromagnetically coupled multilayer, and a NiO-based spin value with the planar Hall effect. (author)

  18. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  19. Stripe domains and magnetoresistance in thermally deposited nickel films

    Science.gov (United States)

    Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

  20. Stripe domains and magnetoresistance in thermally deposited nickel films

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, P.D. E-mail: sparks@hmc.edu; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21{+-}0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane.

  1. Magnetoresistance in molybdenite (MoS2) crystals

    International Nuclear Information System (INIS)

    Chakraborty, B.R.; Dutta, A.K.

    1975-01-01

    The principal magnetoresistance ratios of molybdenite (MoS 2 ), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 300 0 K to 700 0 K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)

  2. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.

    Science.gov (United States)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y B; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-27

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  3. Colossal Magnetoresistance in La-Y-Ca-Mn-O Films

    NARCIS (Netherlands)

    Chen, L.H.; Tiefel, T.H.; Jin, S.; Palstra, T.T.M.; Ramesh, R.; Kwon, C.

    1996-01-01

    Magnetoresistance behavior of La0.60Y0.07CaMnOx, thin films epitaxially grown on LaAlO3 has been investigated. The films exhibit colossal magnetoresistance with the MR ratio in excess of 10^8% at ~60K, H = 7T, which is the highest ever reported for thin film manganites. The partial substitution of

  4. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in bo...

  5. Large intragrain magnetoresistance above room temperature in the double perovskite Ba2FeMoO6

    International Nuclear Information System (INIS)

    Maignan, A.; Raveau, B.; Martin, C.; Hervieu, M.

    1999-01-01

    Large intragrain magnetoresistance (MR) in the ordered double perovskite, Ba 2 FeMo 6 , is shown for the first time. The latter appears near T c (340 K), i.e., above room temperature. This effect originates from a double-exchange-like mechanism, based on antiferromagnetic coupling of localized high spin 3d 5 Fe 3+ , and itinerant 4d 1 Mo 5+ species. Besides this bulk MR, low field tunneling MR at lower temperatures (T 2 FeMoO 6 . Such a coexistence of both effects, intragrain and intergrain magnetoresistance, might extend to all members of this double perovskite family, suggesting the possibility of optimizing the MR for working at room temperature in a low magnetic field, by tuning the T c of solid solutions of such perovskites

  6. Magnetoresistance effect in a both magnetically and electrically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu, Mao-Wang; Yang, Guo-Jian

    2007-01-01

    We propose a magnetoresistance device in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems, and this system may be used as a voltage-tunable magnetoresistance device

  7. Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance.

    Science.gov (United States)

    Alexandrov, Alexandre S; Dediu, Valentin A; Kabanov, Victor V

    2012-05-04

    In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.

  8. Large magnetoresistance effect in nitrogen-doped silicon

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2017-05-01

    Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  9. Large magnetoresistance tunnelling through a magnetically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu Maowang; Zhang Lide

    2003-01-01

    Based on a combination of an inhomogeneous magnetic field and a two-dimensional electron gas, we have constructed a giant magnetoresistance nanostructure, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on top of a semiconductor heterostructure. We have theoretically studied the magnetoresistance for electrons tunnelling through this nanostructure. It is shown that there exists a significant transmission difference between the parallel and antiparallel magnetization configurations, which leads to a large magnetoresistance. It is also shown that the magnetoresistance ratio strongly depends not only on incident electronic energy but also on the ferromagnetic strips, and thus a much larger magnetoresistance ratio can be obtained by properly fabricating the ferromagnetic strips in the system

  10. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    Science.gov (United States)

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  11. Bipolar spintronics: from spin injection to spin-controlled logic

    International Nuclear Information System (INIS)

    Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

    2007-01-01

    An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

  12. Large magnetoresistance in intercalated Cu oxides

    OpenAIRE

    Grigoryan, L.; Furusawa, M.; Hori, H.; Tokumoto, M.

    1997-01-01

    Magnetism and electrical resistance as a function of magnetic field, temperature, and chemical composition are studied in Cu oxides intercalated with metal phthalocyanines MPc, where M is Fe or Ni, and Pc is C_H_N_. An unusually large positive magnetoresistance (MR) of ~ 1200% is observed in FePc-intercalated Bi_Sr_Ca_Cu_O_ samples with two Cu-O layers in the unit cell (n=2). The magnitude of the MR decreased to 40% and ~ 0% in the FePc-intercalated n=3 and n=4 samples, respectively, and to ~...

  13. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  14. Which valve is which?

    Directory of Open Access Journals (Sweden)

    Pravin Saxena

    2015-01-01

    Full Text Available A 25-year-old man presented with a history of breathlessness for the past 2 years. He had a history of operation for Tetralogy of Fallot at the age of 5 years and history suggestive of Rheumatic fever at the age of 7 years. On echocardiographic examination, all his heart valves were severely regurgitating. Morphologically, all the valves were irreparable. The ejection fraction was 35%. He underwent quadruple valve replacement. The aortic and mitral valves were replaced by metallic valve and the tricuspid and pulmonary by tissue valve.

  15. Bioprosthetic Valve Fracture Improves the Hemodynamic Results of Valve-in-Valve Transcatheter Aortic Valve Replacement.

    Science.gov (United States)

    Chhatriwalla, Adnan K; Allen, Keith B; Saxon, John T; Cohen, David J; Aggarwal, Sanjeev; Hart, Anthony J; Baron, Suzanne J; Dvir, Danny; Borkon, A Michael

    2017-07-01

    Valve-in-valve (VIV) transcatheter aortic valve replacement (TAVR) may be less effective in small surgical valves because of patient/prosthesis mismatch. Bioprosthetic valve fracture (BVF) using a high-pressure balloon can be performed to facilitate VIV TAVR. We report data from 20 consecutive clinical cases in which BVF was successfully performed before or after VIV TAVR by inflation of a high-pressure balloon positioned across the valve ring during rapid ventricular pacing. Hemodynamic measurements and calculation of the valve effective orifice area were performed at baseline, immediately after VIV TAVR, and after BVF. BVF was successfully performed in 20 patients undergoing VIV TAVR with balloon-expandable (n=8) or self-expanding (n=12) transcatheter valves in Mitroflow, Carpentier-Edwards Perimount, Magna and Magna Ease, Biocor Epic and Biocor Epic Supra, and Mosaic surgical valves. Successful fracture was noted fluoroscopically when the waist of the balloon released and by a sudden drop in inflation pressure, often accompanied by an audible snap. BVF resulted in a reduction in the mean transvalvular gradient (from 20.5±7.4 to 6.7±3.7 mm Hg, P valve effective orifice area (from 1.0±0.4 to 1.8±0.6 cm 2 , P valves to facilitate VIV TAVR with either balloon-expandable or self-expanding transcatheter valves and results in reduced residual transvalvular gradients and increased valve effective orifice area. © 2017 American Heart Association, Inc.

  16. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    International Nuclear Information System (INIS)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L.; Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-01-01

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF 2 exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF 2 doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  17. Magnetic multilayers and giant magnetoresistance fundamentals and industrial applications

    CERN Document Server

    2000-01-01

    Magneto-electronics is certainly one of the most rapidly expanding fields in basic research and industrial application. Magnetic multilayers are the key devices in this field; they allow the utilization of unique micromagnetic, magneto-optic, and magneto-electronic phenomena which cannot be realized on the basis of conventional materials. This book provides a detailed and well-balanced introduction to both the underlying physical fundamentals and the technological applications in terms of devices that are just entering the market or are of high industrial relevance for the near future. In particular, the employment of magnetic multilayers in magneto-optical recording, in GMR and spin-valve devices, and as configurations yielding a striking nonlinear magneto-optical response is discussed in a comprehensive way. This state-of-the-art review involves an extensive list of key references to original work and thus makes the vast knowledge already accumulated in the field accessible to the reader.

  18. Mitral Valve Prolapse

    Science.gov (United States)

    ... valve syndrome . What happens during MVP? Watch an animation of mitral valve prolapse When the heart pumps ( ... our brochures Popular Articles 1 Understanding Blood Pressure Readings 2 Sodium and Salt 3 Heart Attack Symptoms ...

  19. Problem: Mitral Valve Regurgitation

    Science.gov (United States)

    ... each time the left ventricle contracts. Watch an animation of mitral valve regurgitation A leaking mitral valve ... Not Alone Popular Articles 1 Understanding Blood Pressure Readings 2 Sodium and Salt 3 Heart Attack Symptoms ...

  20. Problem: Heart Valve Regurgitation

    Science.gov (United States)

    ... should be completely closed For example: Watch an animation of mitral valve regurgitation A leaking mitral valve ... Not Alone Popular Articles 1 Understanding Blood Pressure Readings 2 Sodium and Salt 3 Heart Attack Symptoms ...

  1. Aortic valve surgery - open

    Science.gov (United States)

    ... gov/ency/article/007408.htm Aortic valve surgery - open To use the sharing features on this page, ... separates the heart and aorta. The aortic valve opens so blood can flow out. It then closes ...

  2. Corrosion of valve metals

    International Nuclear Information System (INIS)

    Draley, J.E.

    1976-01-01

    A general survey related to the corrosion of valve metals or film-forming metals. The way these metals corrode with some general examples is described. Valve metals form relatively perfect oxide films with little breakdown or leakage when anodized

  3. Mitral valve surgery - open

    Science.gov (United States)

    ... Taking warfarin (Coumadin) References Otto CM, Bonow RO. Valvular heart disease. In: Mann DL, Zipes DP, Libby P, Bonow ... A.M. Editorial team. Heart Surgery Read more Heart Valve Diseases Read more Mitral Valve Prolapse Read more A. ...

  4. Swing check valve

    International Nuclear Information System (INIS)

    Eminger, H.E.

    1977-01-01

    A swing check valve which includes a valve body having an inlet and outlet is described. A recess in the valve body designed to hold a seal ring and a check valve disc swingable between open and closed positions. The disc is supported by a high strength wire secured at one end in a support spacer pinned through bearing blocks fixed to the valve body and at its other end in a groove formed on the outer peripheral surface of the disc. The parts are designed and chosen such to provide a lightweight valve disc which is held open by minimum velocity of fluid flowing through the valve which thus reduces oscillations and accompanying wear of bearings supporting the valve operating parts. (Auth.)

  5. Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$

    OpenAIRE

    Wang, Kefeng; Petrovic, C.

    2016-01-01

    We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...

  6. Simulating realistic implementations of spin field effect transistor

    Science.gov (United States)

    Gao, Yunfei; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2011-04-01

    The spin field effect transistor (spinFET), consisting of two ferromagnetic source/drain contacts and a Si channel, is predicted to have outstanding device and circuit performance. We carry out a rigorous numerical simulation of the spinFET based on the nonequilibrium Green's function formalism self-consistently coupled with a Poisson solver to produce the device I-V characteristics. Good agreement with the recent experiments in terms of spin injection, spin transport, and the magnetoresistance ratio (MR) is obtained. We include factors crucial for realistic devices: tunneling through a dielectric barrier, and spin relaxation at the interface and in the channel. Using these simulations, we suggest ways of optimizing the device. We propose that by choosing the right contact material and inserting tunnel oxide barriers between the source/drain and channel to filter different spins, the MR can be restored to ˜2000%, which would be beneficial to the reconfigurable logic circuit application.

  7. Spin Filtering in Epitaxial Spinel Films with Nanoscale Phase Separation

    KAUST Repository

    Li, Peng

    2017-05-08

    The coexistence of ferromagnetic metallic phase and antiferromagnetic insulating phase in nanoscaled inhomogeneous perovskite oxides accounts for the colossal magnetoresistance. Although the model of spin-polarized electron transport across antiphase boundaries has been commonly employed to account for large magnetoresistance (MR) in ferrites, the magnetic anomalies, the two magnetic phases and enhanced molecular moment, are still unresolved. We observed a sizable MR in epitaxial spinel films (NiCo2O4-δ) that is much larger than that commonly observed in spinel ferrites. Detailed analysis reveals that this MR can be attributed to phase separation, in which the perfect ferrimagnetic metallic phase and ferrimagnetic insulating phase coexist. The magnetic insulating phase plays an important role in spin filtering in these phase separated spinel oxides, leading to a sizable MR effect. A spin filtering model based on Zeeman effect and direct tunneling is developed to account for MR of the phase separated films.

  8. The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

    Science.gov (United States)

    Grollier, Julie

    2013-03-01

    Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

  9. Mitral Valve Prolapse

    Science.gov (United States)

    Mitral valve prolapse (MVP) occurs when one of your heart's valves doesn't work properly. The flaps of the valve are "floppy" and ... to run in families. Most of the time, MVP doesn't cause any problems. Rarely, blood can ...

  10. Overflow control valve

    International Nuclear Information System (INIS)

    Kessinger, B.A.; Hundal, R.; Parlak, E.A.

    1982-01-01

    An overflow control valve for use in a liquid sodium coolant pump tank which can be remotely engaged with and disengaged from the pump tank wall to thereby permit valve removal. An actuating shaft for controlling the valve also has means for operating a sliding cylinder against a spring to retract the cylinder from sealing contact with the pump tank nozzle. (author)

  11. Fluid control valves

    International Nuclear Information System (INIS)

    Rankin, J.

    1980-01-01

    A fluid control valve is described in which it is not necessary to insert a hand or a tool into the housing to remove the valve seat. Such a valve is particularly suitable for the control of radioactive fluids since maintenance by remote control is possible. (UK)

  12. A remote control valve

    International Nuclear Information System (INIS)

    Cachard, Maurice de; Dumont, Maurice.

    1976-01-01

    This invention concerns a remote control valve for shutting off or distributing a fluid flowing at a high rate and low pressure. Among the different valves at present in use, electric valves are the most recommended for remote control but their reliability is uncertain and they soon become costly when large diameter valves are used. The valve described in this invention does away with this drawback owing to its simplicity and the small number of moving parts, this makes it particularly reliable. It mainly includes: a tubular body fitted with at least one side opening; at least one valve wedge for this opening, coaxial with the body, and mobile; a mobile piston integral with this wedge. Several valves to the specifications of this invention can be fitted in series (a shut-off valve can be used in conjunction with one or more distribution valves). The fitting and maintenance of the valve is very simple owing to its design. It can be fabricated in any material such as metals, alloys, plastics and concrete. The structure of the valve prevents the flowing fluid from coming into contact with the outside environment, thereby making it particularly suitable in the handling of dangerous or corrosive fluids. Finally, the opening and shutting of the valve occurs slowly, thereby doing away with the water hammer effect so frequent in large bore pipes [fr

  13. Heart Valve Diseases

    Science.gov (United States)

    Your heart has four valves. Normally, these valves open to let blood flow through or out of your heart, and then shut to keep it from flowing ... close tightly. It's one of the most common heart valve conditions. Sometimes it causes regurgitation. Stenosis - when ...

  14. Spin-wave interference patterns created by spin-torque nano-oscillators for memory and computation

    International Nuclear Information System (INIS)

    Macia, Ferran; Kent, Andrew D; Hoppensteadt, Frank C

    2011-01-01

    Magnetization dynamics in nanomagnets has attracted broad interest since it was predicted that a dc current flowing through a thin magnetic layer can create spin-wave excitations. These excitations are due to spin momentum transfer, a transfer of spin angular momentum between conduction electrons and the background magnetization, that enables new types of information processing. Here we show how arrays of spin-torque nano-oscillators can create propagating spin-wave interference patterns of use for memory and computation. Memristic transponders distributed on the thin film respond to threshold tunnel magnetoresistance values, thereby allowing spin-wave detection and creating new excitation patterns. We show how groups of transponders create resonant (reverberating) spin-wave interference patterns that may be used for polychronous wave computation and information storage.

  15. Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe{sub 3}O{sub 4} films

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Kap Soo [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2017-02-01

    We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe{sub 3}O{sub 4} films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe{sub 3}O{sub 4} films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.

  16. New type magnetoresistance in Co/Si systems

    International Nuclear Information System (INIS)

    Honda, S.; Ishikawa, T.; Takai, K.; Mitarai, Y.; Harada, H.

    2005-01-01

    The magnetoresistance (MR) properties in both the sputter-deposited Co/Si multilayers and the system consisting of Co evaporated on the anodized Si have been examined. In the Co/Si multilayers, at room temperature both the sharp ordinary magnetoresistance (OMR) and the negative granular-type giant magnetoresistance (GMR) appear, while at low temperatures only the large OMR of about 3.5% is observed for in-plane field. In the Co/anodized-Si system, at room temperature the MR is negligibly small, while it increases steeply with decreasing temperature and very large OMR of about 22% is obtained at 110 K for perpendicular field

  17. Large magnetoresistance in La-Ca-Mn-O films

    International Nuclear Information System (INIS)

    Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.

    1995-01-01

    A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films

  18. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  19. Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes.

    Science.gov (United States)

    Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming

    2017-04-07

    This article reports the characterization of WTe 2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe 2 thin films.

  20. Spin diffusion and torques in disordered antiferromagnets

    KAUST Repository

    Manchon, Aurelien

    2017-02-01

    We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.