Effect of resistance feedback on spin torque-induced switching of nanomagnets
International Nuclear Information System (INIS)
Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.
2009-01-01
In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.
Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant
You, Chun-Yeol
2012-01-01
We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic expression of the switching current density is based on the macro-spin model, there is no dependence of the exchange stiffness constant. When the switching is occurred, however, the spin configuration forms C-, S-type, or complicated domain structures. Since the spi...
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator
Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao
2017-08-01
The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.
Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
Gajek, M.; Nowak, J. J.; Sun, J. Z.; Trouilloud, P. L.; O'Sullivan, E. J.; Abraham, D. W.; Gaidis, M. C.; Hu, G.; Brown, S.; Zhu, Y.; Robertazzi, R. P.; Gallagher, W. J.; Worledge, D. C.
2012-03-01
Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.
Li, J. X.; Yu, G. Q.; Tang, C.; Wang, K. L.; Shi, J.
Spin-orbit torque (SOT) has been demonstrated to be efficient to manipulate the magnetization in heavy-metal/ferromagnetic metal (HM/FMM) heterostructures. In HM/magnetic insulator (MI) heterostructures, charge currents do not flow in MI, but pure spin currents generated by the spin Hall effect in HM can enter the MI layer to cause magnetization dynamics. Here we report SOT-induced magnetization switching in Tm3Fe5O12/Pt heterostructures, where Tm3Fe5O12 (TmIG) is a MI grown by pulsed laser deposition with perpendicular magnetic anisotropy. The anomalous Hall signal in Pt is used as a probe to detect the magnetization switching. Effective magnetic fields due to the damping-like and field-like torques are extracted using a harmonic Hall detection method. The experiments are carried out in heterostructures with different TmIG film thicknesses. Both the switching and harmonic measurements indicate a more efficient SOT generation in HM/MI than in HM/FMM heterostructures. Our comprehensive experimental study and detailed analysis will be presented. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences under Award No. SC0012670.
Wu, Mingzhong
As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).
Spin-orbit torque-driven magnetization switching in 2D-topological insulator heterostructure
Soleimani, Maryam; Jalili, Seifollah; Mahfouzi, Farzad; Kioussis, Nicholas
2017-02-01
Charge pumping and spin-orbit torque (SOT) are two reciprocal phenomena widely studied in ferromagnet (FM)/topological insulator (TI) heterostructures. However, the SOT and its corresponding switching phase diagram for a FM island in proximity to a two-dimensional topological insulator (2DTI) has not been explored yet. We have addressed these features, using the recently developed adiabatic expansion of time-dependent nonequilibrium Green's function (NEGF) in the presence of both precessing magnetization and bias voltage. We have calculated the angular and spatial dependence of different components of the SOT on the FM island. We determined the switching phase diagram of the FM for different orientations of the easy axis. The results can be used as a guideline for the future experiments on such systems.
Ghosh, Abhijit; Garello, Kevin; Avci, Can Onur; Gabureac, Mihai; Gambardella, Pietro
2017-01-01
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to developing electrically controlled memory and logic devices. Here, we report on vector measurements of the current-induced spin-orbit torques and magnetization switching in perpendicularly magnetized Pd /Co /AlOx layers as a function of Pd thickness. We find sizable dampinglike (DL) and fieldlike (FL) torques, on the order of 1 mT per 107 A /cm2 , which have different thicknesses and magnetization angle dependencies. The analysis of the DL torque efficiency per unit current density and the electric field using drift-diffusion theory leads to an effective spin Hall angle and spin-diffusion length of Pd larger than 0.03 and 7 nm, respectively. The FL spin-orbit torque includes a significant interface contribution, is larger than estimated using drift-diffusion parameters, and, furthermore, is strongly enhanced upon rotation of the magnetization from the out-of-plane to the in-plane direction. Finally, taking advantage of the large spin-orbit torques in this system, we demonstrate bipolar magnetization switching of Pd /Co /AlOx layers with a similar current density to that used for Pt /Co layers with a comparable perpendicular magnetic anisotropy.
Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano
2017-12-01
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.
Critical current density for spin transfer torque switching with composite free layer structure
You, Chun-Yeol
2009-01-01
Critical current density of composite free layer (CFL) in magnetic tunneling junction is investigated. CFL consists of two exchange coupled ferromagnetic layers, where the coupling is parallel or anti-parallel. Instability condition of the CFL under the spin transfer torque, which is related with critical current density, is obtained by analytic spin wave excitation model and confirmed by macro-spin Landau-Lifshitz-Gilbert equation. The critical current densities for the coupled two identical...
Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.
2012-04-01
CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.
Yu, Guoqiang; Akyol, Mustafa; Upadhyaya, Pramey; Li, Xiang; He, Congli; Fan, Yabin; Montazeri, Mohammad; Alzate, Juan G.; Lang, Murong; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.
2016-01-01
Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied. Recently, it has been further demonstrated that the in-plane magnetic field can be eliminated by introducing a new type of perpendicular field-like SOT via incorporating a lateral structural a...
Wu, Yang; Narayanapillai, Kulothungasagaran; Elyasi, Mehrdad; Qiu, Xuepeng; Yang, Hyunsoo
2016-10-01
The efficient generation of pure spin currents and manipulation of the magnetization dynamics of magnetic structures is of central importance in the field of spintronics. The spin-orbit effect is one of the promising ways to generate spin currents, in which a charge current can be converted to a transverse spin current due to the spin-orbit interaction. We investigate the spin dynamics in the presence of strong spin-orbit coupling materials such as LaAlO3/SrTiO3 oxide heterostructures. Angle dependent magnetoresistance measurements are employed to detect and understand the current-induced spin-orbit torques, and an effective field of 2.35 T is observed for a dc-current of 200 uA. In order to understand the interaction between light and spin currents, we use a femtosecond laser to excite an ultrafast transient spin current and subsequent terahertz (THz) emission in nonmagnet (NM)/ferromagnet (FM)/oxide heterostructures. The THz emission strongly relies on spin-orbit interaction, and is tailored by the magnitude and sign of the effective spin Hall angle of the NM. Our results can be utilized for ultrafast spintronic devices and tunable THz sources.
Bekele, Zelalem Abebe; Meng, Kangkang; Zhao, Bing; Wu, Yong; Miao, Jun; Xu, Xiaoguang; Jiang, Yong
2017-08-01
Symmetry breaking provides new insight into the physics of spin-orbit torque (SOT) and the switching without a magnetic field could lead to significant impact. In this work, we demonstrate the robust zero-field SOT switching of a perpendicular ferromagnet (FM) layer where the symmetry is broken by a bilayer of heavy metals (HMs) with the strong spin-orbit coupling (SOC). We observed the change of coercivity value by 31% after inserting Co2FeAl in the multilayer structure. These two HM layers (Ta and Pt) are used to strengthen the SOC by linear combination. With different angles between the magnetization and the current (i.e. parallel and anti-parallel), the structures show different switching behaviors such as clockwise or counterclockwise.
Spin Transfer Torque in Graphene
Lin, Chia-Ching; Chen, Zhihong
2014-03-01
Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.
International Nuclear Information System (INIS)
Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wong, Kin L.; Wang, Kang L.; Wu, Hao; Han, Xiufeng; Zhang, Zongzhi; Khalili Amiri, Pedram
2016-01-01
We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co_4_0Fe_4_0B_2_0 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.
Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions
International Nuclear Information System (INIS)
Aurelio, D.; Torres, L.; Finocchio, G.
2009-01-01
This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.
Buhl, M.; Erbe, A.; Grebing, J.; Wintz, S.; Raabe, J.; Fassbender, J.
2013-10-01
Changing and detecting the orientation of nanomagnetic structures, which can be used for durable information storage, needs to be developed towards true nanoscale dimensions for keeping up the miniaturization speed of modern nanoelectronic components. Therefore, new concepts for controlling the state of nanomagnets are currently in the focus of research in the field of nanoelectronics. Here, we demonstrate reproducible switching of a purely metallic nanopillar placed on a lead that conducts a spin-polarized current at room temperature. Spin diffusion across the metal-metal (Cu to CoFe) interface between the pillar and the lead causes spin accumulation in the pillar, which may then be used to set the magnetic orientation of the pillar. In our experiments, the detection of the magnetic state of the nanopillar is performed by direct imaging via scanning transmission x-ray microscopy (STXM).
Shi, Shengjie; Ou, Yongxi; Aradhya, S. V.; Ralph, D. C.; Buhrman, R. A.
2018-01-01
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast nanosecond-scale performance with low-write-error rates. Here, we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin-memory loss by introducing subatomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a β -W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 ×106 A /cm2 .
Yasuda, K.; Tsukazaki, A.; Yoshimi, R.; Kondou, K.; Takahashi, K. S.; Otani, Y.; Kawasaki, M.; Tokura, Y.
2017-09-01
The current-nonlinear Hall effect or second harmonic Hall voltage is widely used as one of the methods for estimating charge-spin conversion efficiency, which is attributed to the magnetization oscillation by spin-orbit torque (SOT). Here, we argue the second harmonic Hall voltage under a large in-plane magnetic field with an in-plane magnetization configuration in magnetic-nonmagnetic topological insulator (TI) heterostructures, Crx (Bi1 -ySby )2 -xTe3 /(Bi1 -ySby )2Te3 , where it is clearly shown that the large second harmonic voltage is governed not by SOT but mainly by asymmetric magnon scattering without macroscopic magnetization oscillation. Thus, this method does not allow an accurate estimation of charge-spin conversion efficiency in TI. Instead, the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5 ×1010 A m-2 , showing its potential as a spintronic material.
Spin Orbit Interaction Engineering for beyond Spin Transfer Torque memory
Wang, Kang L.
Spin transfer torque memory uses electron current to transfer the spin torque of electrons to switch a magnetic free layer. This talk will address an alternative approach to energy efficient non-volatile spintronics through engineering of spin orbit interaction (SOC) and the use of spin orbit torque (SOT) by the use of electric field to improve further the energy efficiency of switching. I will first discuss the engineering of interface SOC, which results in the electric field control of magnetic moment or magneto-electric (ME) effect. Magnetic memory bits based on this ME effect, referred to as magnetoelectric RAM (MeRAM), is shown to have orders of magnitude lower energy dissipation compared with spin transfer torque memory (STTRAM). Likewise, interests in spin Hall as a result of SOC have led to many advances. Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures have been shown to arise from the large SOC. The large SOC is also shown to give rise to the large SOT. Due to the presence of an intrinsic extraordinarily strong SOC and spin-momentum lock, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. In particular, we will show the magnetization switching in a chromium-doped magnetic TI bilayer heterostructure by charge current. A giant SOT of more than three orders of magnitude larger than those reported in heavy metals is also obtained. This large SOT is shown to come from the spin-momentum locked surface states of TI, which may further lead to innovative low power applications. I will also describe other related physics of SOC at the interface of anti-ferromagnetism/ferromagnetic structure and show the control exchange bias by electric field for high speed memory switching. The work was in part supported by ERFC-SHINES, NSF, ARO, TANMS, and FAME.
International Nuclear Information System (INIS)
Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha
2013-01-01
We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle
International Nuclear Information System (INIS)
Hara, Takaaki; Senami, Masato; Tachibana, Akitomo
2012-01-01
The spin torque and zeta force, which govern spin dynamics, are studied by using monoatoms in their steady states. We find nonzero local spin torque in transition metal atoms, which is in balance with the counter torque, the zeta force. We show that d-orbital electrons have a crucial effect on these torques. Nonzero local chirality density in transition metal atoms is also found, though the electron mass has the effect to wash out nonzero chirality density. Distribution patterns of the chirality density are the same for Sc–Ni atoms, though the electron density distributions are different. -- Highlights: ► Nonzero local spin torque is found in the steady states of transition metal atoms. ► The spin steady state is realized by the existence of a counter torque, zeta force. ► D-orbital electrons have a crucial effect on the spin torque and zeta force. ► Nonzero local chiral density is found in spite of the washout by the electron mass. ► Chiral density distribution have the same pattern for Sc–Ni atoms.
Dynamics of domain wall driven by spin-transfer torque
International Nuclear Information System (INIS)
Chureemart, P.; Evans, R. F. L.; Chantrell, R. W.
2011-01-01
Spin-torque switching of magnetic devices offers new technological possibilities for data storage and integrated circuits. We have investigated domain-wall motion in a ferromagnetic thin film driven by a spin-polarized current using an atomistic spin model with a modified Landau-Lifshitz-Gilbert equation including the effect of the spin-transfer torque. The presence of the spin-transfer torque is shown to create an out-of-plane domain wall, in contrast to the external-field-driven case where an in-plane wall is found. We have investigated the effect of the spin torque on domain-wall displacement, domain-wall velocity, and domain-wall width, as well as the equilibration time in the presence of the spin-transfer torque. We have shown that the minimum spin-current density, regarded as the critical value for domain-wall motion, decreases with increasing temperature.
Sojeong Kim,; Seungjun Lee,; Hyungsoon Shin,
2010-04-01
In spin transfer torque (STT)-based magnetic tunnel junction (MTJ), the switching depends on the current pulse-width as well as the magnitude of the switching current. We present an advanced macro-model of an STT-MTJ for a circuit simulator such as HSPICE. The macro-model can simulate the dependence of switching behavior on current pulse-width in an STT-MTJ. An imaginary resistor-capacitor (RC) circuit is adopted to emulate complex timing behavior which cannot be described nicely by existing functions in HSPICE. Simulation results show the resistance-current (R-I) curve and timing behavior is in good agreement with the experimental data.
Hao, Qiang; Xiao, Gang
2015-03-01
We obtain robust perpendicular magnetic anisotropy in a β -W /Co40Fe40B20/MgO structure without the need of any insertion layer between W and Co40Fe40B20 . This is achieved within a broad range of W thicknesses (3.0-9.0 nm), using a simple fabrication technique. We determine the spin Hall angle (0.40) and spin-diffusion length for the bulk β form of tungsten with a large spin-orbit coupling. As a result of the giant spin Hall effect in β -W and careful magnetic annealing, we significantly reduce the critical current density for the spin-transfer-torque-induced magnetic switching in Co40Fe40B20 . The elemental β -W is a superior candidate for magnetic memory and spin-logic applications.
Avci, Can Onur; Rosenberg, Ethan; Baumgartner, Manuel; Beran, Lukáš; Quindeau, Andy; Gambardella, Pietro; Ross, Caroline A.; Beach, Geoffrey S. D.
2017-08-01
We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. We first show that, with quasi-DC (10 ms) current pulses, SOT-induced switching can be achieved with an external field as low as 2 Oe, making TmIG an outstanding candidate to realize efficient switching in heterostructures that produce moderate stray fields without requiring an external field. We then demonstrate deterministic switching with fast current pulses (≤20 ns) with an amplitude of ˜1012 A/m2, similar to all-metallic structures. We reveal that, in the presence of an initially nucleated domain, the critical switching current is reduced by up to a factor of five with respect to the fully saturated initial state, implying efficient current-driven domain wall motion in this system. Based on measurements with 2 ns-long pulses, we estimate the domain wall velocity of the order of ˜400 m/s per j = 1012 A/m2.
Spin Switching via Quantum Dot Spin Valves
Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.
2018-01-01
We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.
Spin Torque Oscillator for High Performance Magnetic Memory
Directory of Open Access Journals (Sweden)
Rachid Sbiaa
2015-06-01
Full Text Available A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO, and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.
Next generation spin torque memories
Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay
2017-01-01
This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
Assisted Writing in Spin Transfer Torque Magnetic Tunnel Junctions
Ganguly, Samiran; Ahmed, Zeeshan; Datta, Supriyo; Marinero, Ernesto E.
2015-03-01
Spin transfer torque driven MRAM devices are now in an advanced state of development, and the importance of reducing the current requirement for writing information is well recognized. Different approaches to assist the writing process have been proposed such as spin orbit torque, spin Hall effect, voltage controlled magnetic anisotropy and thermal excitation. In this work,we report on our comparative study using the Spin-Circuit Approach regarding the total energy, the switching speed and energy-delay products for different assisted writing approaches in STT-MTJ devices using PMA magnets.
Heat-driven spin torques in antiferromagnets
Białek, Marcin; Bréchet, Sylvain; Ansermet, Jean-Philippe
2018-04-01
Heat-driven magnetization damping, which is a linear function of a temperature gradient, is predicted in antiferromagnets by considering the sublattice dynamics subjected to a heat-driven spin torque. This points to the possibility of achieving spin torque oscillator behavior. The model is based on the magnetic Seebeck effect acting on sublattices which are exchange coupled. The heat-driven spin torque is estimated and the feasibility of detecting this effect is discussed.
Spin Orbit Torque in Ferromagnetic Semiconductors
Li, Hang
2016-06-21
Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read\\' and `write\\' in memory devices can be significantly improved. Hence, the manipulation of electron spin in electronic devices becomes more and more appealing for the advancement of microelectronics. In spin-based devices, the manipulation of ferromagnetic order parameter using electrical currents is a very useful means for current-driven operation. Nowadays, most of magnetic memory devices are based on the so-called spin transfer torque, which stems from the spin angular momentum transfer between a spin-polarized current and the magnetic order parameter. Recently, a novel spin torque effect, exploiting spin-orbit coupling in non-centrosymmetric magnets, has attracted a massive amount of attention. This thesis addresses the nature of spin-orbit coupled transport and torques in non-centrosymmetric magnetic semiconductors. We start with the theoretical study of spin orbit torque in three dimensional ferromagnetic GaMnAs. Using the Kubo formula, we calculate both the current-driven field-like torque and anti-damping-like torque. We compare the numerical results with the analytical expressions in the model case of a magnetic Rashba two-dimensional electron gas. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. Subsequently we study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. This thesis then addresses the influence of the quantum spin Hall
Spin transfer torque with spin diffusion in magnetic tunnel junctions
Manchon, Aurelien
2012-08-09
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.
Spin transfer torque with spin diffusion in magnetic tunnel junctions
Manchon, Aurelien; Matsumoto, R.; Jaffres, H.; Grollier, J.
2012-01-01
in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque
Efficient micromagnetic modelling of spin-transfer torque and spin-orbit torque
Abert, Claas; Bruckner, Florian; Vogler, Christoph; Suess, Dieter
2018-05-01
While the spin-diffusion model is considered one of the most complete and accurate tools for the description of spin transport and spin torque, its solution in the context of dynamical micromagnetic simulations is numerically expensive. We propose a procedure to retrieve the free parameters of a simple macro-spin like spin-torque model through the spin-diffusion model. In case of spin-transfer torque the simplified model complies with the model of Slonczewski. A similar model can be established for the description of spin-orbit torque. In both cases the spin-diffusion model enables the retrieval of free model parameters from the geometry and the material parameters of the system. Since these parameters usually have to be determined phenomenologically through experiments, the proposed method combines the strength of the diffusion model to resolve material parameters and geometry with the high performance of simple torque models.
Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions
Manchon, Aurelien
2011-05-17
Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.
Spin diffusion and torques in disordered antiferromagnets
Manchon, Aurelien
2017-02-01
We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.
Spin diffusion and torques in disordered antiferromagnets
Manchon, Aurelien
2017-01-01
We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.
Spin Hall and spin swapping torques in diffusive ferromagnets
Pauyac, C. O.
2017-12-08
A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.
Spin Hall and spin swapping torques in diffusive ferromagnets
Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.
2017-01-01
A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.
Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets
Hung, Yu-Ming
This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then
Spin transport and spin torque in antiferromagnetic devices
Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.
2018-03-01
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.
Angular dependence of spin-orbit spin-transfer torques
Lee, Ki-Seung
2015-04-06
In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.
Angular dependence of spin-orbit spin-transfer torques
Lee, Ki-Seung; Go, Dongwook; Manchon, Aurelien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin
2015-01-01
In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.
Charge-induced spin torque in Weyl semimetals
Kurebayashi, Daichi; Nomura, Kentaro
In this work, we present phenomenological and microscopic derivations of spin torques in magnetically doped Weyl semimetals. As a result, we obtain the analytical expression of the spin torque generated, without a flowing current, when the chemical potential is modulated. We also find that this spin torque is a direct consequence of the chiral anomaly. Therefore, observing this spin torque in magnetic Weyl semimetals might be an experimental evidence of the chiral anomaly. This spin torque has also a great advantage in application. In contrast to conventional current-induced spin torques such as the spin-transfer torques, this spin torque does not accompany a constant current flow. Thus, devices using this operating principle is free from the Joule heating and possibly have higher efficiency than devices using conventional current-induced spin torques. This work was supported by JSPS KAKENHI Grant Number JP15H05854 and JP26400308.
Shot noise of spin current and spin transfer torque
Yu, Yunjin; Zhan, Hongxin; Wan, Langhui; Wang, Bin; Wei, Yadong; Sun, Qingfeng; Wang, Jian
2013-04-01
We report the theoretical investigation of the shot noise of the spin current (Sσ) and the spin transfer torque (Sτ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear Sσ - V and Sτ - V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage Nτ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque Nτ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period Nτ(θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters.
Shot noise of spin current and spin transfer torque
International Nuclear Information System (INIS)
Yu Yunjin; Zhan Hongxin; Wan Langhui; Wang Bin; Wei Yadong; Sun Qingfeng; Wang Jian
2013-01-01
We report the theoretical investigation of the shot noise of the spin current (S σ ) and the spin transfer torque (S τ ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear S σ − V and S τ − V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage N τ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque N τ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period N τ (θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters. (paper)
Spatially and time-resolved magnetization dynamics driven by spin-orbit torques
Baumgartner, Manuel; Garello, Kevin; Mendil, Johannes; Avci, Can O.; Grimaldi, Eva; Murer, Christoph; Feng, Junxiao; Gabureac, Mihai; Stamm, Christian; Acremann, Yves; Finizio, Simone; Wintz, Sebastian; Raabe, Jörg; Gambardella, Pietro
2017-01-01
Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities inherent to materials with strong spin-orbit coupling make SOTs especially appealing for fast switching applications in nonvolatile memory and logic units. So far, however, the timescale and evolution of the magnetization during the switching process have ...
Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions
Manchon, Aurelien
2011-01-01
be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from
Controlling the spin-torque efficiency with ferroelectric barriers
Useinov, A.; Chshiev, M.; Manchon, Aurelien
2015-01-01
Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.
Controlling the spin-torque efficiency with ferroelectric barriers
Useinov, A.
2015-02-11
Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.
Spin orbit torque based electronic neuron
Energy Technology Data Exchange (ETDEWEB)
Sengupta, Abhronil, E-mail: asengup@purdue.edu; Choday, Sri Harsha; Kim, Yusung; Roy, Kaushik [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
2015-04-06
A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step switching scheme, a charge current places the magnetization of a nano-magnet along the hard-axis, i.e., an unstable point for the magnet. In the second step, the SOT device (neuron) receives a current (from the synapses) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the synaptic current encodes the excitatory and inhibitory nature of the neuron input and determines the final orientation of the magnetization. A resistive crossbar array, functioning as synapses, generates a bipolar current that is a weighted sum of the inputs. The simulation of a two layer feed-forward artificial neural network based on the SOT electronic neuron shows that it consumes ∼3× lower power than a 45 nm digital CMOS implementation, while reaching ∼80% accuracy in the classification of 100 images of handwritten digits from the MNIST dataset.
Spin orbit torque based electronic neuron
International Nuclear Information System (INIS)
Sengupta, Abhronil; Choday, Sri Harsha; Kim, Yusung; Roy, Kaushik
2015-01-01
A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step switching scheme, a charge current places the magnetization of a nano-magnet along the hard-axis, i.e., an unstable point for the magnet. In the second step, the SOT device (neuron) receives a current (from the synapses) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the synaptic current encodes the excitatory and inhibitory nature of the neuron input and determines the final orientation of the magnetization. A resistive crossbar array, functioning as synapses, generates a bipolar current that is a weighted sum of the inputs. The simulation of a two layer feed-forward artificial neural network based on the SOT electronic neuron shows that it consumes ∼3× lower power than a 45 nm digital CMOS implementation, while reaching ∼80% accuracy in the classification of 100 images of handwritten digits from the MNIST dataset
Possible evidence for spin-transfer torque induced by spin-triplet supercurrent
Li, Lailai
2017-10-04
Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.
Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.
2014-06-01
A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.
International Nuclear Information System (INIS)
Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.
2014-01-01
A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.
Manipulating the voltage dependence of tunneling spin torques
Manchon, Aurelien
2012-01-01
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact
Spin-torque generation in topological insulator based heterostructures
Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah
2016-01-01
Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather
Spin Hall effect-driven spin torque in magnetic textures
Manchon, Aurelien; Lee, K.-J.
2011-01-01
Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.
Spin Hall effect-driven spin torque in magnetic textures
Manchon, Aurelien
2011-07-13
Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.
Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves
Cheng, Yihong; Chen, Kai; Zhang, Shufeng
2018-01-01
We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.
Spin-transfer torque in spin filter tunnel junctions
Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek
2014-01-01
Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.
Spin-transfer torque in spin filter tunnel junctions
Ortiz Pauyac, Christian
2014-12-08
Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.
Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction
Ortiz Pauyac, Christian
2016-06-19
In the present thesis we introduce the reader to the ﬁeld of spintronics and explore new phenomena, such as spin transfer torques, spin ﬁltering, and three types of spin-orbit torques, Rashba, spin Hall, and spin swapping, which have emerged very recently and are promising candidates for a new generation of memory devices in computer technology. A general overview of these phenomena is presented in Chap. 1. In Chap. 2 we study spin transfer torques in tunnel junctions in the presence of spin ﬁltering. In Chap. 3 we discuss the Rashba torque in ferromagnetic ﬁlms, and in Chap. 4 we study spin Hall eﬀect and spin swapping in ferromagnetic ﬁlms, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives are summarized in Chap. 5.
Tailoring spin-orbit torque in diluted magnetic semiconductors
Li, Hang; Wang, Xuhui; Doǧan, Fatih; Manchon, Aurelien
2013-01-01
We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.
Tailoring spin-orbit torque in diluted magnetic semiconductors
Li, Hang
2013-05-16
We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.
Mode coupling in spin torque oscillators
International Nuclear Information System (INIS)
Zhang, Steven S.-L.; Zhou, Yan; Li, Dong; Heinonen, Olle
2016-01-01
A number of recent experimental works have shown that the dynamics of a single spin torque oscillator can exhibit complex behavior that stems from interactions between two or more modes of the oscillator, such as observed mode-hopping or mode coexistence. There has been some initial work indicating how the theory for a single-mode (macro-spin) spin torque oscillator should be generalized to include several modes and the interactions between them. In the present work, we rigorously derive such a theory starting with the Landau–Lifshitz–Gilbert equation for magnetization dynamics by expanding up to third-order terms in deviation from equilibrium. Our results show how a linear mode coupling, which is necessary for observed mode-hopping to occur, arises through coupling to a magnon bath. The acquired temperature dependence of this coupling implies that the manifold of orbits and fixed points may shift with temperature. - Highlights: • Deriving equations for coupled modes in spin torque oscillators. • Including Hamiltonian formalism and elimination of three–magnon processes. • Thermal bath of magnons central to mode coupling. • Numerical examples of circular and elliptical devices.
Mode coupling in spin torque oscillators
Energy Technology Data Exchange (ETDEWEB)
Zhang, Steven S.-L., E-mail: ZhangShule@missouri.edu [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States); Zhou, Yan, E-mail: yanzhou@hku.hk [Department of Physics, The University of Hong Kong, Hong Kong (China); Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong (China); Li, Dong, E-mail: geodesic.ld@gmail.com [Department of Physics, Centre for Nonlinear Studies, and Beijing-Hong Kong-Singapore Joint Centre for Nonlinear and Complex Systems, Hong Kong Baptist University, Kowloon Tong, Hong Kong (China); Heinonen, Olle, E-mail: heinonen@anl.gov [Material Science Division, Argonne National Laboratory, Lemont, IL 60439 (United States); Northwestern-Argonne Institute of Science and Technology, 2145 Sheridan Road, Evanston, IL 60208 (United States); Computation Institute, The Unversity of Chicago, 5735 S Ellis Avenue, Chicago, IL 60637 (United States)
2016-09-15
A number of recent experimental works have shown that the dynamics of a single spin torque oscillator can exhibit complex behavior that stems from interactions between two or more modes of the oscillator, such as observed mode-hopping or mode coexistence. There has been some initial work indicating how the theory for a single-mode (macro-spin) spin torque oscillator should be generalized to include several modes and the interactions between them. In the present work, we rigorously derive such a theory starting with the Landau–Lifshitz–Gilbert equation for magnetization dynamics by expanding up to third-order terms in deviation from equilibrium. Our results show how a linear mode coupling, which is necessary for observed mode-hopping to occur, arises through coupling to a magnon bath. The acquired temperature dependence of this coupling implies that the manifold of orbits and fixed points may shift with temperature. - Highlights: • Deriving equations for coupled modes in spin torque oscillators. • Including Hamiltonian formalism and elimination of three–magnon processes. • Thermal bath of magnons central to mode coupling. • Numerical examples of circular and elliptical devices.
Spin-orbit torques in magnetic bilayers
Haney, Paul
2015-03-01
Spintronics aims to utilize the coupling between charge transport and magnetic dynamics to develop improved and novel memory and logic devices. Future progress in spintronics may be enabled by exploiting the spin-orbit coupling present at the interface between thin film ferromagnets and heavy metals. In these systems, applying an in-plane electrical current can induce magnetic dynamics in single domain ferromagnets, or can induce rapid motion of domain wall magnetic textures. There are multiple effects responsible for these dynamics. They include spin-orbit torques and a chiral exchange interaction (the Dzyaloshinskii-Moriya interaction) in the ferromagnet. Both effects arise from the combination of ferromagnetism and spin-orbit coupling present at the interface. There is additionally a torque from the spin current flux impinging on the ferromagnet, arising from the spin hall effect in the heavy metal. Using a combination of approaches, from drift-diffusion to Boltzmann transport to first principles methods, we explore the relative contributions to the dynamics from these different effects. We additionally propose that the transverse spin current is locally enhanced over its bulk value in the vicinity of an interface which is oriented normal to the charge current direction.
The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures
Grollier, Julie
2013-03-01
Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.
Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R
2011-10-28
The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.
Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction
Ortiz Pauyac, Christian
2016-01-01
ﬁltering. In Chap. 3 we discuss the Rashba torque in ferromagnetic ﬁlms, and in Chap. 4 we study spin Hall eﬀect and spin swapping in ferromagnetic ﬁlms, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives
Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions
Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.
2015-09-01
Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.
Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions
International Nuclear Information System (INIS)
Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.
2015-01-01
Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated
Robust spin transfer torque in antiferromagnetic tunnel junctions
Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien
2017-01-01
We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque
Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers
Energy Technology Data Exchange (ETDEWEB)
Skinner, T. D., E-mail: tds32@cam.ac.uk; Irvine, A. C.; Heiss, D.; Kurebayashi, H.; Ferguson, A. J., E-mail: ajf1006@cam.ac.uk [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Wang, M.; Hindmarch, A. T.; Rushforth, A. W. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
2014-02-10
Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven ferromagnetic resonance technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, was analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the sum of the field-like torque and Oersted torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.
Current-induced Rashba spin orbit torque in silicene
Energy Technology Data Exchange (ETDEWEB)
Chen, Ji, E-mail: muze7777@hdu.edu.cn [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Peng, Yingzi [Department of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhou, Jie [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China)
2017-06-15
Highlights: • The spin dynamics of a ferromagnetic layer coupled to a silicene is investigated. • The Rashba spin orbit torque is obtained and the well-known LLG equation is modified. • The explicit forms of spin orbit torques in Domain Wall and vortex is also obtained. - Abstract: We study theoretically the spin torque of a ferromagnetic layer coupled to a silicene in the presence of the intrinsic Rashba spin orbit coupling (RSOC) effect. By using gauge field method, we find that under the applied current, the RSOC can induce an effective field which will result in the spin precession of conduction electron without applying any magnetic field. We also derive the spin torques due to the RSOC, which generalize the Landau-Lifshitz-Gilbert (LLG) equation. The spin torques are related to the applied current, the carrier density and Rashba strength of the system.
Železný, J.
2017-01-10
One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný, Phys. Rev. Lett. 113, 157201 (2014)]PRLTAO0031-900710.1103/PhysRevLett.113.157201, the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley, Science 351, 587 (2016)]SCIEAS0036-807510.1126/science.aab1031. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.
Železný , J.; Gao, H.; Manchon, Aurelien; Freimuth, Frank; Mokrousov, Yuriy; Zemen, J.; Mašek, J.; Sinova, Jairo; Jungwirth, T.
2017-01-01
One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný, Phys. Rev. Lett. 113, 157201 (2014)]PRLTAO0031-900710.1103/PhysRevLett.113.157201, the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley, Science 351, 587 (2016)]SCIEAS0036-807510.1126/science.aab1031. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.
Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers
MacNeill, D.; Stiehl, G. M.; Guimaraes, M. H. D.; Buhrman, R. A.; Park, J.; Ralph, D. C.
2017-03-01
Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation--the component of torque that can compensate magnetic damping is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidamping switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin-source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidamping torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling spin-orbit torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies.
Self-consistent treatment of spin and magnetization dynamic effect in spin transfer switching
International Nuclear Information System (INIS)
Guo Jie; Tan, Seng Ghee; Jalil, Mansoor Bin Abdul; Koh, Dax Enshan; Han, Guchang; Meng, Hao
2011-01-01
The effect of itinerant spin moment (m) dynamic in spin transfer switching has been ignored in most previous theoretical studies of the magnetization (M) dynamics. Thus in this paper, we proposed a more refined micromagnetic model of spin transfer switching that takes into account in a self-consistent manner of the coupled m and M dynamics. The numerical results obtained from this model further shed insight on the switching profiles of m and M, both of which show particular sensitivity to parameters such as the anisotropy field, the spin torque field, and the initial deviation between m and M.
Spin-torque generation in topological insulator based heterostructures
Fischer, Mark H.
2016-03-11
Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.
Domain wall oscillations induced by spin torque in magnetic nanowires
Energy Technology Data Exchange (ETDEWEB)
Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat (Oman); Chantrell, R. W. [Department of Physics, University of York, York YO10 5DD (United Kingdom)
2015-02-07
Using micromagnetic simulations, the effects of the non-adiabatic spin torque (β) and the geometry of nanowires on domain wall (DW) dynamics are investigated. For the case of in-plane anisotropy nanowire, it is observed that the type of DW and its dynamics depends on its dimension. For a fixed length, the critical switching current decreases almost exponentially with the width W, while the DW speed becomes faster for larger W. For the case of perpendicular anisotropy nanowire, it was observed that DW dynamics depends strongly on β. For small values of β, oscillations of DW around the center of nanowire were revealed even after the current is switched off. In addition to nanowire geometry and intrinsic material properties, β could provide a way to control DW dynamics.
Parameter dependence of resonant spin torque magnetization reversal
International Nuclear Information System (INIS)
Fricke, L.; Serrano-Guisan, S.; Schumacher, H.W.
2012-01-01
We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.
Parameter dependence of resonant spin torque magnetization reversal
Fricke, L.; Serrano-Guisan, S.; Schumacher, H. W.
2012-04-01
We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.
Smooth torque speed characteristic of switched reluctance motors
DEFF Research Database (Denmark)
Zeng, Hui; Chen, Zhe; Chen, Hao
2014-01-01
The torque ripple of switched reluctance motors (SRMs) is the main disadvantage that limits the industrial application of these motors. Although several methods for smooth-toque operation (STO) have been proposed, STO works well only within a certain torque and speed range because...
Optimum geometry for torque ripple minimization of switched reluctance motors
Sahin, F.; Ertan, H.B.; Leblebicioglu, K.
2000-01-01
For switched reluctance motors, one of the major problems is torque ripple which causes increased undesirable acoustic noise and possibly speed ripple. This paper describes an approach to determine optimum magnetic circuit parameters to minimize low speed torque ripple for such motors. The
Robust spin transfer torque in antiferromagnetic tunnel junctions
Saidaoui, Hamed Ben Mohamed
2017-04-18
We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.
A non-unity torque sharing function for torque ripple minimization of switched reluctance generators
DEFF Research Database (Denmark)
Park, Kiwoo; Liu, Xiao; Chen, Zhe
2013-01-01
This paper presents a new torque ripple minimization technique for a Switched Reluctance Generator (SRG). Although the SRG has many advantageous characteristics as a generator, it has not been widely employed in the industry. One of the most notorious disadvantages of the SRG is its high torque...
Stability analysis of perpendicular magnetic trilayers with a field-like spin torque
International Nuclear Information System (INIS)
Wang, Ri-Xing; Zhao, Jing-Li; He, Peng-Bin; Gu, Guan-Nan; Li, Zai-Dong; Pan, An-Lian; Liu, Quan-Hui
2013-01-01
We have analytically studied the magnetization dynamics in magnetic trilayers with perpendicular anisotropy for both free and pinned layers. By linear stability analysis, we obtain the phase diagram parameterized by the current, magnetic field and relative strength of the field-like spin torque to Slonczewski torque. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out-of-plane precession, and bistable states can be realized. The precession frequency can be expressed as a function of the current and external magnetic field. In addition, the presence of field-like spin torque can change the switching current and precession frequency. - Highlights: ► The phase diagram is obtained by linear stability analysis. ► The precession frequency can be controlled by the current and magnetic field. ► Field-like spin torque can change instability current and precession frequency.
Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes
Saidaoui, Hamed Ben Mohamed
2014-05-28
Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green\\'s function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.
Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes
Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien; Waintal, Xavier
2014-01-01
Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.
Manipulating the voltage dependence of tunneling spin torques
Manchon, Aurelien
2012-10-01
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.
Current-induced torques and interfacial spin-orbit coupling
Haney, Paul M.; Lee, Hyun-Woo; Lee, Kyung-Jin; Manchon, Aurelien; Stiles, M. D.
2013-01-01
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.
Current-induced torques and interfacial spin-orbit coupling
Haney, Paul M.
2013-12-19
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.
Magnetization reversal driven by a spin torque oscillator
Energy Technology Data Exchange (ETDEWEB)
Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123 Muscat (Oman)
2014-09-01
Magnetization reversal of a magnetic free layer under spin transfer torque (STT) effect from a magnetic hard layer with a fixed magnetization direction and an oscillating layer is investigated. By including STT from the oscillating layer with in-plane anisotropy and orthogonal polarizer, magnetization-time dependence of free layer is determined. The results show that the frequency and amplitude of oscillations can be varied by adjusting the current density and magnetic properties. For an optimal oscillation frequency (f{sub opt}), a reduction of the switching time (t{sub 0}) of the free layer is observed. Both f{sub opt} and t{sub 0} increase with the anisotropy field of the free layer.
Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers
Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien
2016-01-01
Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.
Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers
Saidaoui, Hamed Ben Mohamed
2016-07-12
Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.
Self-oscillation in spin torque oscillator stabilized by field-like torque
International Nuclear Information System (INIS)
Taniguchi, Tomohiro; Tsunegi, Sumito; Kubota, Hitoshi; Imamura, Hiroshi
2014-01-01
The effect of the field-like torque on the self-oscillation of the magnetization in spin torque oscillator with a perpendicularly magnetized free layer was studied theoretically. A stable self-oscillation at zero field is excited for negative β while the magnetization dynamics stops for β = 0 or β > 0, where β is the ratio between the spin torque and the field-like torque. The reason why only the negative β induces the self-oscillation was explained from the view point of the energy balance between the spin torque and the damping. The oscillation power and frequency for various β were also studied by numerical simulation
Dirac spin-orbit torques and charge pumping at the surface of topological insulators
Ndiaye, Papa Birame
2017-07-07
We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.
Dirac spin-orbit torques and charge pumping at the surface of topological insulators
Ndiaye, Papa Birame; Akosa, Collins Ashu; Fischer, M. H.; Vaezi, A.; Kim, E.-A.; Manchon, Aurelien
2017-01-01
We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.
Dirac spin-orbit torques and charge pumping at the surface of topological insulators
Ndiaye, Papa B.; Akosa, C. A.; Fischer, M. H.; Vaezi, A.; Kim, E.-A.; Manchon, A.
2017-07-01
We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.
Spin-Stabilized Spacecrafts: Analytical Attitude Propagation Using Magnetic Torques
Directory of Open Access Journals (Sweden)
Roberta Veloso Garcia
2009-01-01
Full Text Available An analytical approach for spin-stabilized satellites attitude propagation is presented, considering the influence of the residual magnetic torque and eddy currents torque. It is assumed two approaches to examine the influence of external torques acting during the motion of the satellite, with the Earth's magnetic field described by the quadripole model. In the first approach is included only the residual magnetic torque in the motion equations, with the satellites in circular or elliptical orbit. In the second approach only the eddy currents torque is analyzed, with the satellite in circular orbit. The inclusion of these torques on the dynamic equations of spin stabilized satellites yields the conditions to derive an analytical solution. The solutions show that residual torque does not affect the spin velocity magnitude, contributing only for the precession and the drift of the spacecraft's spin axis and the eddy currents torque causes an exponential decay of the angular velocity magnitude. Numerical simulations performed with data of the Brazilian Satellites (SCD1 and SCD2 show the period that analytical solution can be used to the attitude propagation, within the dispersion range of the attitude determination system performance of Satellite Control Center of Brazil National Research Institute.
Spin-transfer torque generated by a topological insulator
Mellnik, A. R.; Lee, Joonsue; Richardella, Anthony R.; Grab, J. L.; Mintun, P. J.; Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eunah; Samarth, Nitin S.; Ralph, Daniel C.
2014-01-01
permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque
Spin current and spin transfer torque in ferromagnet/superconductor spin valves
Moen, Evan; Valls, Oriol T.
2018-05-01
Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.
Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure
Wang, Xuhui; Ortiz Pauyac, Christian; Manchon, Aurelien
2014-01-01
Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.
Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure
Wang, Xuhui
2014-02-07
Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.
Scanning-SQUID investigation of spin-orbit torque acting on yttrium iron garnet devices
Rosenberg, Aaron J.; Jermain, Colin L.; Aradhya, Sriharsha V.; Brangham, Jack T.; Nowack, Katja C.; Kirtley, John R.; Yang, Fengyuan; Ralph, Daniel C.; Moler, Kathryn A.
Successful manipulation of electrically insulating magnets, such as yttrium iron garnet, by by current-driven spin-orbit torques could provide a highly efficient platform for spintronic memory. Compared to devices fabricated using magnetic metals, magnetic insulators have the advantage of the ultra-low magnetic damping and the elimination of shunting currents in the magnet that reduce the torque efficiency. Here, we apply current in the spin Hall metal β-Ta to manipulate the magnetic orientation of micron-sized, electrically-insulating yttrium iron garnet devices. We do not observe spin-torque switching even for applied currents well above the critical current expected in a macrospin switching model. This suggests either inefficient transfer of spin torque at our Ta/YIG interface or a breakdown of the macrospin approximation. This work is supported by FAME, one of six centers of STARnet sponsored by MARCO and DARPA. The SQUID microscope and sensors were developed with support from the NSF-sponsored Center NSF-NSEC 0830228, and from NSF IMR-MIP 0957616.
Precessional switching of antiferromagnets by electric field induced Dzyaloshinskii-Moriya torque
Kim, T. H.; Grünberg, P.; Han, S. H.; Cho, B. K.
2018-05-01
Antiferromagnetic insulators (AFIs) have attracted much interest from many researchers as promising candidates for use in ultrafast, ultralow-dissipation spintronic devices. As a fast method of reversing magnetization, precessional switching is realized when antiferromagnetic Néel orders l =(s1+s2 )/2 surmount the magnetic anisotropy or potential barrier in a given magnetic system, which is described well by the antiferromagnetic plane pendulum (APP) model. Here, we report that, as an alternative switching scenario, the direct coupling of an electric field with Dzyaloshinskii-Moriya (DM) interaction, which stems from spin-orbit coupling, is exploited for optimal switching. We derive the pendulum equation of motion of antiferromagnets, where DM torque is induced by a pulsed electric field. The temporal DM interaction is found to not only be in the form of magnetic torques (e.g., spin-orbit torque or magnetic field) but also modifies the magnetic potential that limits l 's activity; as a result, appropriate controls (e.g., direction, magnitude, and pulse shape) of the induced DM vector realize deterministic reversal in APP. The results present an approach for the control of a magnetic storage device by means of an electric field.
Intraband and interband spin-orbit torques in noncentrosymmetric ferromagnets
Li, Hang; Gao, H.; Zâ rbo, Liviu P.; Vý borný , K.; Wang, Xuhui; Garate, Ion; Dogan, Fatih; Čejchan, A.; Sinova, Jairo; Jungwirth, T.; Manchon, Aurelien
2015-01-01
Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using the Kubo formula. In addition to the current-driven fieldlike torque TFL=τFLm×uso (uso being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form TDL=τDLm×(uso×m). Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchange coupled to the Mn moments. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described.
Spin-Orbit Torques in Co/Pd Multilayer Nanowires
Jamali, Mahdi; Narayanapillai, Kulothungasagaran; Qiu, Xuepeng; Loong, Li Ming; Manchon, Aurelien; Yang, Hyunsoo
2013-01-01
Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 108 A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.
Spin-Orbit Torques in Co/Pd Multilayer Nanowires
Jamali, Mahdi
2013-12-09
Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 108 A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.
Intraband and interband spin-orbit torques in noncentrosymmetric ferromagnets
Li, Hang
2015-04-01
Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using the Kubo formula. In addition to the current-driven fieldlike torque TFL=τFLm×uso (uso being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form TDL=τDLm×(uso×m). Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchange coupled to the Mn moments. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described.
Field-free deterministic ultrafast creation of magnetic skyrmions by spin-orbit torques
Büttner, Felix; Lemesh, Ivan; Schneider, Michael; Pfau, Bastian; Günther, Christian M.; Hessing, Piet; Geilhufe, Jan; Caretta, Lucas; Engel, Dieter; Krüger, Benjamin; Viefhaus, Jens; Eisebitt, Stefan; Beach, Geoffrey S. D.
2017-11-01
Magnetic skyrmions are stabilized by a combination of external magnetic fields, stray field energies, higher-order exchange interactions and the Dzyaloshinskii-Moriya interaction (DMI). The last favours homochiral skyrmions, whose motion is driven by spin-orbit torques and is deterministic, which makes systems with a large DMI relevant for applications. Asymmetric multilayers of non-magnetic heavy metals with strong spin-orbit interactions and transition-metal ferromagnetic layers provide a large and tunable DMI. Also, the non-magnetic heavy metal layer can inject a vertical spin current with transverse spin polarization into the ferromagnetic layer via the spin Hall effect. This leads to torques that can be used to switch the magnetization completely in out-of-plane magnetized ferromagnetic elements, but the switching is deterministic only in the presence of a symmetry-breaking in-plane field. Although spin-orbit torques led to domain nucleation in continuous films and to stochastic nucleation of skyrmions in magnetic tracks, no practical means to create individual skyrmions controllably in an integrated device design at a selected position has been reported yet. Here we demonstrate that sub-nanosecond spin-orbit torque pulses can generate single skyrmions at custom-defined positions in a magnetic racetrack deterministically using the same current path as used for the shifting operation. The effect of the DMI implies that no external in-plane magnetic fields are needed for this aim. This implementation exploits a defect, such as a constriction in the magnetic track, that can serve as a skyrmion generator. The concept is applicable to any track geometry, including three-dimensional designs.
Spin Orbit Torque in Ferromagnetic Semiconductors
Li, Hang
2016-01-01
Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read' and `write' in memory devices can
Spin torque on the surface of graphene in the presence of spin orbit splitting
Directory of Open Access Journals (Sweden)
Ji Chen
2013-06-01
Full Text Available We study theoretically the spin transfer torque of a ferromagnetic layer coupled to (deposited onto a graphene surface in the presence of the Rashba spin orbit coupling (RSOC. We show that the RSOC induces an effective magnetic field, which will result in the spin precession of conduction electrons. We derive correspondingly the generalized Landau-Lifshitz-Gilbert (LLG equation, which describes the precessional motion of local magnetization under the influence of the spin orbit effect. Our theoretical estimate indicates that the spin orbit spin torque may have significant effect on the magnetization dynamics of the ferromagnetic layer coupled to the graphene surface.
Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes
Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.
2015-10-01
Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.
Spatially and time-resolved magnetization dynamics driven by spin-orbit torques
Baumgartner, Manuel; Garello, Kevin; Mendil, Johannes; Avci, Can Onur; Grimaldi, Eva; Murer, Christoph; Feng, Junxiao; Gabureac, Mihai; Stamm, Christian; Acremann, Yves; Finizio, Simone; Wintz, Sebastian; Raabe, Jörg; Gambardella, Pietro
2017-10-01
Current-induced spin-orbit torques are one of the most effective ways to manipulate the magnetization in spintronic devices, and hold promise for fast switching applications in non-volatile memory and logic units. Here, we report the direct observation of spin-orbit-torque-driven magnetization dynamics in Pt/Co/AlOx dots during current pulse injection. Time-resolved X-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a subnanosecond current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of the damping-like and field-like spin-orbit torques and the Dzyaloshinskii-Moriya interaction, and show that reproducible switching events can be obtained for over 1012 reversal cycles.
Skyrmionic spin Seebeck effect via dissipative thermomagnonic torques
Kovalev, Alexey A.
2014-06-01
We derive thermomagnonic torque and its "β-type" dissipative correction from the stochastic Landau-Lifshitz-Gilbert equation. The β-type dissipative correction describes viscous coupling between magnetic dynamics and magnonic current and it stems from spin mistracking of the magnetic order. We show that thermomagnonic torque is important for describing temperature gradient induced motion of skyrmions in helical magnets while dissipative correction plays an essential role in generating transverse Magnus force. We propose to detect such skyrmionic motion by employing the transverse spin Seebeck effect geometry.
Synchronization of spin torque nano-oscillators through dipolar interactions
International Nuclear Information System (INIS)
Chen, Hao-Hsuan; Wu, Jong-Ching; Horng, Lance; Lee, Ching-Ming; Chang, Ching-Ray; Chang, Jui-Hang
2014-01-01
In an array of spin-torque nano-oscillators (STNOs) that combine a perpendicular polarized fixed layer with strong in-plane anisotropy in the free layers, magnetic dipolar interactions can effectively phase-lock the array, thus further enhancing the power of the output microwave signals. We perform a qualitative analysis of the synchronization of an array based on the Landau-Lifshitz-Gilbert equation, with a spin-transfer torque that assumes strong in-plane anisotropy. Finally, we present the numerical results for four coupled STNOs to provide further evidence for the proposed theory
Synchronization of spin torque nano-oscillators through dipolar interactions
Energy Technology Data Exchange (ETDEWEB)
Chen, Hao-Hsuan, E-mail: d95222014@ntu.edu.tw; Wu, Jong-Ching, E-mail: phjcwu@cc.ncue.edu.tw; Horng, Lance [Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Lee, Ching-Ming [Graduate School of Materials Science, National Yunlin University of Science and Technology, Douliou, 64002, Taiwan (China); Chang, Ching-Ray, E-mail: crchang@phys.ntu.edu.tw; Chang, Jui-Hang [Department of Physics and Center for Quantum Sciences and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
2014-04-07
In an array of spin-torque nano-oscillators (STNOs) that combine a perpendicular polarized fixed layer with strong in-plane anisotropy in the free layers, magnetic dipolar interactions can effectively phase-lock the array, thus further enhancing the power of the output microwave signals. We perform a qualitative analysis of the synchronization of an array based on the Landau-Lifshitz-Gilbert equation, with a spin-transfer torque that assumes strong in-plane anisotropy. Finally, we present the numerical results for four coupled STNOs to provide further evidence for the proposed theory.
Spin-transfer torque generated by a topological insulator
Mellnik, A. R.
2014-07-23
Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron\\' s spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications. © 2014 Macmillan Publishers Limited. All rights reserved.
Dynamics of magnetization in ferromagnet with spin-transfer torque
Li, Zai-Dong; He, Peng-Bin; Liu, Wu-Ming
2014-11-01
We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effective field and the Gilbert damping term different from the common understanding. When the spin current exceeds the critical value, the conjunctive action of Gilbert damping and spin-transfer torque leads naturally the novel screw-pitch effect characterized by the temporal oscillation of domain wall velocity and width. Driven by space- and time-dependent spin-polarized current and magnetic field, we expatiate the formation of domain wall velocity in ferromagnetic nanowire. We discuss the properties of dynamic magnetic soliton in uniaxial anisotropic ferromagnetic nanowire driven by spin-transfer torque, and analyze the modulation instability and dark soliton on the spin wave background, which shows the characteristic breather behavior of the soliton as it propagates along the ferromagnetic nanowire. With stronger breather character, we get the novel magnetic rogue wave and clarify its formation mechanism. The generation of magnetic rogue wave mainly arises from the accumulation of energy and magnons toward to its central part. We also observe that the spin-polarized current can control the exchange rate of magnons between the envelope soliton and the background, and the critical current condition is obtained analytically. At last, we have theoretically investigated the current-excited and frequency-adjusted ferromagnetic resonance in magnetic trilayers. A particular case of the perpendicular analyzer reveals that the ferromagnetic resonance curves, including the resonant location and the resonant linewidth, can be adjusted by changing the pinned magnetization direction and the direct current. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out
Temperature dependence of spin-orbit torques in Cu-Au alloys
Wen, Yan; Wu, Jun; Li, Peng; Zhang, Qiang; Zhao, Yuelei; Manchon, Aurelien; Xiao, John Q.; Zhang, Xixiang
2017-01-01
We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.
Temperature dependence of spin-orbit torques in Cu-Au alloys
Wen, Yan
2017-03-07
We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.
Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Manchon, Aurelien
2018-01-29
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.
Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Manchon, Aurelien; Miron, I. M.; Jungwirth, T.; Sinova, J.; Zelezný , J.; Thiaville, A.; Garello, K.; Gambardella, P.
2018-01-01
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.
Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents
Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.
2018-03-01
An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.
Wang, X.-G.; Chotorlishvili, L.; Guo, G.-H.; Sukhov, A.; Dugaev, V.; Barnaś, J.; Berakdar, J.
2016-09-01
Thermally activated domain-wall (DW) motion in magnetic insulators has been considered theoretically, with a particular focus on the role of Dzyaloshinskii-Moriya interaction (DMI) and thermomagnonic torques. The thermally assisted DW motion is a consequence of the magnonic spin current due to the applied thermal bias. In addition to the exchange magnonic spin current and the exchange adiabatic and the entropic spin transfer torques, we also consider the DMI-induced magnonic spin current, thermomagnonic DMI fieldlike torque, and the DMI entropic torque. Analytical estimations are supported by numerical calculations. We found that the DMI has a substantial influence on the size and the geometry of DWs, and that the DWs become oriented parallel to the long axis of the nanostrip. Increasing the temperature smoothes the DWs. Moreover, the thermally induced magnonic current generates a torque on the DWs, which is responsible for their motion. From our analysis it follows that for a large enough DMI the influence of DMI-induced fieldlike torque is much stronger than that of the DMI and the exchange entropic torques. By manipulating the strength of the DMI constant, one can control the speed of the DW motion, and the direction of the DW motion can be switched, as well. We also found that DMI not only contributes to the total magnonic current, but also it modifies the exchange magnonic spin current, and this modification depends on the orientation of the steady-state magnetization. The observed phenomenon can be utilized in spin caloritronics devices, for example in the DMI based thermal diodes. By switching the magnetization direction, one can rectify the total magnonic spin current.
Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields
Energy Technology Data Exchange (ETDEWEB)
Luo, Linqiang, E-mail: LL6UK@virginia.edu [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Kabir, Mehdi [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Dao, Nam; Kittiwatanakul, Salinporn [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Cyberey, Michael [Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Institute of Defense Analyses, Alexandria, VA 22311 (United States); Stan, Mircea [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Lu, Jiwei [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States)
2017-06-15
Highlights: • 500 nm size nano-pillar device was fabricated by photolithography techniques. • A magnetic hybrid structure was achieved with perpendicular magnetic fields. • Spin torque switching and oscillation was demonstrated in the large sized device. • Micromagnetic simulations accurately reproduced the experimental results. • Simulations demonstrated the synchronization of magnetic inhomogeneities. - Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co{sub 90}Fe{sub 10}/Cu/Ni{sub 80}Fe{sub 20} pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co{sub 90}Fe{sub 10}) and free layer (Ni{sub 80}Fe{sub 20}) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. A magnetic hybrid structure was achieved for the study of spin torque oscillation by applying a perpendicular field >3 kOe. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogeneities in large sized device. The ability to manipulate spin-dynamics on large size devices could be proved useful for increasing the output power of the spin-transfer nano-oscillators (STNOs).
Heterostructures for Realizing Magnon-Induced Spin Transfer Torque
Directory of Open Access Journals (Sweden)
P. B. Jayathilaka
2012-01-01
Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.
Torque for electron spin induced by electron permanent electric dipole moment
Energy Technology Data Exchange (ETDEWEB)
Senami, Masato, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Fukuda, Masahiro, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Ogiso, Yoji, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Tachibana, Akitomo, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)
2014-10-06
The spin torque of the electron is studied in relation to the electric dipole moment (EDM) of the electron. The spin dynamics is known to be given by the spin torque and the zeta force in quantum field theory. The effect of the EDM on the torque of the spin brings a new term in the equation of motion of the spin. We study this effect for a solution of the Dirac equation with electromagnetic field.
Back-Hopping in Spin-Transfer-Torque Devices: Possible Origin and Countermeasures
Abert, Claas; Sepehri-Amin, Hossein; Bruckner, Florian; Vogler, Christoph; Hayashi, Masamitsu; Suess, Dieter
2018-05-01
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back-hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the destabilization of the pinned layer, which leads to the perpetual switching of both layers. While the presented mechanism is not claimed to be the only possible reason for back-hopping, we show that it is a fundamental effect that will occur in any spin-transfer-torque device when exceeding a critical current. The influence of different material parameters on the critical switching currents for the free and pinned layer is obtained by micromagnetic simulations. The spin-diffusion model enables an accurate description of the torque on both layers, depending on various material parameters. It is found that the choice of a free-layer material with low polarization β and saturation magnetization Ms and a pinned-layer material with high β and Ms leads to a low free-layer critical current and a high pinned-layer critical current and hence reduces the likelihood of back-hopping. While back-hopping has been observed in various types of devices, there are only a few experiments that exhibit this effect in perpendicularly magnetized systems. However, our simulations suggest that the described effect will also gain importance in perpendicular systems due to the loss of pinned-layer anisotropy for decreasing device sizes.
Resonant Spin-Transfer-Torque Nano-Oscillators
Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran
2017-12-01
Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional inductor-based voltage-controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions, which have the disadvantages of low power outputs and poor conversion efficiencies. We theoretically propose using resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present viable device designs geared toward a high microwave output power and an efficient conversion of the dc input power. We attribute these robust qualities to the resulting nontrivial spin-current profiles and the ultrahigh tunnel magnetoresistance, both of which arise from resonant spin filtering. The device designs are based on the nonequilibrium Green's-function spin-transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation and Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around 1150% and an efficiency enhancement of over 1100% compared to typical trilayer designs. We rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. We also demonstrate the robustness of our structures against device design fluctuations and elastic dephasing. This work sets the stage for pentalyer spin-transfer-torque nano-oscillator device designs that ameliorate major issues associated with typical trilayer designs.
Directory of Open Access Journals (Sweden)
Hyein Lim
2013-01-01
Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.
Flexible spin-orbit torque devices
International Nuclear Information System (INIS)
Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek; Salahuddin, Sayeef
2015-01-01
We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10 6 successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging
Flexible spin-orbit torque devices
Energy Technology Data Exchange (ETDEWEB)
Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Salahuddin, Sayeef [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2015-12-21
We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10{sup 6} successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging.
Toward error-free scaled spin torque majority gates
Energy Technology Data Exchange (ETDEWEB)
Vaysset, Adrien; Manfrini, Mauricio; Pourtois, Geoffrey; Radu, Iuliana P.; Thean, Aaron [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)
2016-06-15
The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.
Toward error-free scaled spin torque majority gates
Directory of Open Access Journals (Sweden)
Adrien Vaysset
2016-06-01
Full Text Available The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.
Possible charge analogues of spin transfer torques in bulk superconductors
Garate, Ion
2014-03-01
Spin transfer torques (STT) occur when electric currents travel through inhomogeneously magnetized systems and are important for the motion of magnetic textures such as domain walls. Since superconductors are easy-plane ferromagnets in particle-hole (charge) space, it is natural to ask whether any charge duals of STT phenomena exist therein. We find that the superconducting analogue of the adiabatic STT vanishes in a bulk superconductor with a momentum-independent order parameter, while the superconducting counterpart of the nonadiabatic STT does not vanish. This nonvanishing superconducting torque is induced by heat (rather than charge) currents and acts on the charge (rather than spin) degree of freedom. It can become significant in the vicinity of the superconducting transition temperature, where it generates a net quasiparticle charge and alters the dispersion and linewidth of low-frequency collective modes. This work has been financially supported by Canada's NSERC.
Giant spin torque in systems with anisotropic exchange interaction
Korenev, Vladimir L.
2012-01-01
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the d...
Analytic expression for the giant fieldlike spin torque in spin-filter magnetic tunnel junctions
Tang, Y.-H.; Huang, Z.-W.; Huang, B.-H.
2017-08-01
We propose analytic expressions for fieldlike, T⊥, and spin-transfer, T∥, spin torque components in the spin-filter-based magnetic tunnel junction (SFMTJ), by using the single-band tight-binding model with the nonequilibrium Keldysh formalism. In consideration of multireflection processes between noncollinear magnetization of the spin-filter (SF) barrier and the ferromagnetic (FM) electrode, the central spin-selective SF barrier plays an active role in the striking discovery T⊥≫T∥ , which can be further identified by the unusual barrier thickness dependence of giant T⊥. Our general expressions reveal the sinusoidal angular dependence of both spin torque components, even in the presence of the SF barrier.
Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M. D.
2017-09-01
We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.
International Nuclear Information System (INIS)
Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong
2003-01-01
We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields
Lingos, P. C.; Wang, J.; Perakis, I. E.
2015-05-01
Femtosecond (fs) coherent control of collective order parameters is important for nonequilibrium phase dynamics in correlated materials. Here, we propose such control of ferromagnetic order based on using nonadiabatic optical manipulation of electron-hole (e -h ) photoexcitations to create fs carrier-spin pulses with controllable direction and time profile. These spin pulses are generated due to the time-reversal symmetry breaking arising from nonperturbative spin-orbit and magnetic exchange couplings of coherent photocarriers. By tuning the nonthermal populations of exchange-split, spin-orbit-coupled semiconductor band states, we can excite fs spin-orbit torques that control complex magnetization pathways between multiple magnetic memory states. We calculate the laser-induced fs magnetic anisotropy in the time domain by using density matrix equations of motion rather than the quasiequilibrium free energy. By comparing to pump-probe experiments, we identify a "sudden" out-of-plane magnetization canting displaying fs magnetic hysteresis, which agrees with switchings measured by the static Hall magnetoresistivity. This fs transverse spin-canting switches direction with magnetic state and laser frequency, which distinguishes it from the longitudinal nonlinear optical and demagnetization effects. We propose that sequences of clockwise or counterclockwise fs spin-orbit torques, photoexcited by shaping two-color laser-pulse sequences analogous to multidimensional nuclear magnetic resonance (NMR) spectroscopy, can be used to timely suppress or enhance magnetic ringing and switching rotation in magnetic memories.
Review of an emerging research field 'spin-orbit torques'
International Nuclear Information System (INIS)
Kurebayashi, Hidekazu
2015-01-01
This Review will provide a landscape of the recent development of one of spintronics sub-fields, so-called 'spin orbit torques'. This new class of spin torques, arising from the relativistic spin-orbit interaction in solid states, has gained a great deal of academic interest from relevant scientists and technologists. (author)
Ren, Y. J.; Deng, W. Y.; Geng, H.; Shen, R.; Shao, L. B.; Sheng, L.; Xing, D. Y.
2017-12-01
The spin-orbit torque provides an efficient method for switching the direction of a magnetization by using an electric field. Owing to the spin-orbit coupling, when an electric field is applied, a nonequilibrium spin density is generated, which exerts a torque on the local magnetization. Here, we investigate the spin-orbit torque in a thin film of topological insulator \\text{Bi}2\\text{Se}3 based upon a Boltzmann equation, with proper boundary conditions, which is applicable from the ballistic regime to the diffusive regime. It is shown that due to the spin-momentum interlocking of the electron surface states, the magnitude of the field-like torque is simply in linear proportion to the longitudinal electrical current. For a fixed electric field, the spin-orbit torque is proportional to the sample length in the ballistic limit, and saturates to a constant in the diffusive limit. The dependence of the torque on the magnetization direction and exchange coupling strength is also studied. Our theory may offer useful guidance for experimental investigations of the spin-orbit torque in finite-size systems.
Spin transfer torque generated magnetic droplet solitons (invited)
International Nuclear Information System (INIS)
Chung, S.; Mohseni, S. M.; Sani, S. R.; Iacocca, E.; Dumas, R. K.; Pogoryelov, Ye.; Anh Nguyen, T. N.; Muduli, P. K.; Eklund, A.; Hoefer, M.; Åkerman, J.
2014-01-01
We present recent experimental and numerical advancements in the understanding of spin transfer torque generated magnetic droplet solitons. The experimental work focuses on nano-contact spin torque oscillators (NC-STOs) based on orthogonal (pseudo) spin valves where the Co fixed layer has an easy-plane anisotropy, and the [Co/Ni] free layer has a strong perpendicular magnetic anisotropy. The NC-STO resistance and microwave signal generation are measured simultaneously as a function of drive current and applied perpendicular magnetic field. Both exhibit dramatic transitions at a certain current dependent critical field value, where the microwave frequency drops 10 GHz, modulation sidebands appear, and the resistance exhibits a jump, while the magnetoresistance changes sign. We interpret these observations as the nucleation of a magnetic droplet soliton with a large fraction of its magnetization processing with an angle greater than 90°, i.e., around a direction opposite that of the applied field. This interpretation is corroborated by numerical simulations. When the field is further increased, we find that the droplet eventually collapses under the pressure from the Zeeman energy
Intrinsic and extrinsic spin-orbit torques from first principles
International Nuclear Information System (INIS)
Geranton, Guillaume
2017-01-01
This thesis attempts to shed light on the microscopic mechanisms underlying the current-induced magnetic torques in ferromagnetic heterostructures. We have developed first principles methods aiming at the accurate and effcient calculation of the so-called spin-orbit torques (SOTs) in magnetic thin films. The emphasis of this work is on the impurity-driven extrinsic SOTs. The main part of this thesis is dedicated to the development of a formalism for the calculation of the SOTs within the Korringa-Kohn-Rostoker (KKR) method. The impurity-induced transitions rates are obtained from first principles and their effect on transport properties is treated within the Boltzmann formalism. The developed formalism provides a mean to compute the SOTs beyond the conventional constant relaxation time approximation. We first apply our formalism to the investigation of FePt/Pt and Co/Cu bilayers in the presence of defects and impurities. Our results hint at a crucial dependence of the torque on the type of disorder present in the films, which we explain by a complex interplay of several competing Fermi surface contributions to the SOT. Astonishingly, specific defect distributions or doping elements lead respectively to an increase or a sign change of the torque, which can not be explained on the basis of simple models. We also compute the intrinsic SOT induced by electrical and thermal currents within the full potential linearized augmented plane-wave method. Motivated by recent experimental works, we then investigate the microscopic origin of the SOT in a Ag_2Bi-terminated Ag film grown on ferromagnetic Fe(110). We find that the torque in that system can not be explained solely by the spin-orbit coupling in the Ag_2Bi alloy, and instead results from the spin-orbit coupling in all regions of the film.Finally, we predict a large SOT in Fe/Ge bilayers and suggest that semiconductor substrates might be a promising alternative to heavy metals for the development of SOT-based magnetic
Intrinsic and extrinsic spin-orbit torques from first principles
Energy Technology Data Exchange (ETDEWEB)
Geranton, Guillaume
2017-09-01
This thesis attempts to shed light on the microscopic mechanisms underlying the current-induced magnetic torques in ferromagnetic heterostructures. We have developed first principles methods aiming at the accurate and effcient calculation of the so-called spin-orbit torques (SOTs) in magnetic thin films. The emphasis of this work is on the impurity-driven extrinsic SOTs. The main part of this thesis is dedicated to the development of a formalism for the calculation of the SOTs within the Korringa-Kohn-Rostoker (KKR) method. The impurity-induced transitions rates are obtained from first principles and their effect on transport properties is treated within the Boltzmann formalism. The developed formalism provides a mean to compute the SOTs beyond the conventional constant relaxation time approximation. We first apply our formalism to the investigation of FePt/Pt and Co/Cu bilayers in the presence of defects and impurities. Our results hint at a crucial dependence of the torque on the type of disorder present in the films, which we explain by a complex interplay of several competing Fermi surface contributions to the SOT. Astonishingly, specific defect distributions or doping elements lead respectively to an increase or a sign change of the torque, which can not be explained on the basis of simple models. We also compute the intrinsic SOT induced by electrical and thermal currents within the full potential linearized augmented plane-wave method. Motivated by recent experimental works, we then investigate the microscopic origin of the SOT in a Ag{sub 2}Bi-terminated Ag film grown on ferromagnetic Fe(110). We find that the torque in that system can not be explained solely by the spin-orbit coupling in the Ag{sub 2}Bi alloy, and instead results from the spin-orbit coupling in all regions of the film.Finally, we predict a large SOT in Fe/Ge bilayers and suggest that semiconductor substrates might be a promising alternative to heavy metals for the development of SOT
High frequency spin torque oscillators with composite free layer spin valve
International Nuclear Information System (INIS)
Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda
2016-01-01
We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.
Enhanced Spin-Orbit Torque via Modulation of Spin Current Absorption
Qiu, Xuepeng
2016-11-18
The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.
High frequency spin torque oscillators with composite free layer spin valve
Energy Technology Data Exchange (ETDEWEB)
Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda
2016-07-15
We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.
Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions
International Nuclear Information System (INIS)
Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang
2005-01-01
Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift
A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements
Lee, Seungyeon; Lee, Hyunjoo; Kim, Sojeong; Lee, Seungjun; Shin, Hyungsoon
2010-04-01
Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.
Torque Coordination Control during Braking Mode Switch for a Plug-in Hybrid Electric Vehicle
Directory of Open Access Journals (Sweden)
Yang Yang
2017-10-01
Full Text Available Hybrid vehicles usually have several braking systems, and braking mode switches are significant events during braking. It is difficult to coordinate torque fluctuations caused by mode switches because the dynamic characteristics of braking systems are different. In this study, a new type of plug-in hybrid vehicle is taken as the research object, and braking mode switches are divided into two types. The control strategy of type one is achieved by controlling the change rates of clutch hold-down and motor braking forces. The control strategy of type two is achieved by simultaneously changing the target braking torque during different mode switch stages and controlling the motor to participate in active coordination control. Finally, the torque coordination control strategy is modeled in MATLAB/Simulink, and the results show that the proposed control strategy has a good effect in reducing the braking torque fluctuation and vehicle shocks during braking mode switches.
Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong; Jo, Younghun; Park, Byong-Guk
2015-01-01
The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques. PMID:26423608
Ultra-fast three terminal perpendicular spin-orbit torque MRAM (Presentation Recording)
Boulle, Olivier; Cubukcu, Murat; Hamelin, Claire; Lamard, Nathalie; Buda-Prejbeanu, Liliana; Mikuszeit, Nikolai; Garello, Kevin; Gambardella, Pietro; Langer, Juergen; Ocker, Berthold; Miron, Mihai; Gaudin, Gilles
2015-09-01
The discovery that a current flowing in a heavy metal can exert a torque on a neighboring ferromagnet has opened a new way to manipulate the magnetization at the nanoscale. This "spin orbit torque" (SOT) has been demonstrated in ultrathin magnetic multilayers with structural inversion asymmetry (SIA) and high spin orbit coupling, such as Pt/Co/AlOx multilayers. We have shown that this torque can lead to the magnetization switching of a perpendicularly magnetized nanomagnet by an in-plane current injection. The manipulation of magnetization by SOT has led to a novel concept of magnetic RAM memory, the SOT-MRAM, which combines non volatility, high speed, reliability and large endurance. These features make the SOT-MRAM a good candidate to replace SRAM for non-volatile cache memory application. We will present the proof of concept of a perpendicular SOT-MRAM cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction and demonstrate ultra-fast (down to 300 ps) deterministic bipolar magnetization switching. Macrospin and micromagnetic simulations including SOT cannot reproduce the experimental results, which suggests that additional physical mechanisms are at stacks. Our results show that SOT-MRAM is fast, reliable and low power, which is promising for non-volatile cache memory application. We will also discuss recent experiments of magnetization reversal in ultrathin multilayers Pt/Co/AlOx by very short (<200 ps) current pulses. We will show that in this material, the Dzyaloshinskii-Moryia interaction plays a key role in the reversal process.
Current induced torques and interfacial spin-orbit coupling: Semiclassical modeling
Haney, Paul M.
2013-05-07
In bilayer nanowires consisting of a ferromagnetic layer and a nonmagnetic layer with strong spin-orbit coupling, currents create torques on the magnetization beyond those found in simple ferromagnetic nanowires. The resulting magnetic dynamics appear to require torques that can be separated into two terms, dampinglike and fieldlike. The dampinglike torque is typically derived from models describing the bulk spin Hall effect and the spin transfer torque, and the fieldlike torque is typically derived from a Rashba model describing interfacial spin-orbit coupling. We derive a model based on the Boltzmann equation that unifies these approaches. We also consider an approximation to the Boltzmann equation, the drift-diffusion model, that qualitatively reproduces the behavior, but quantitatively differs in some regimes. We show that the Boltzmann equation with physically reasonable parameters can match the torques for any particular sample, but in some cases, it fails to describe the experimentally observed thickness dependencies.
Spin-orbit torque in two-dimensional antiferromagnetic topological insulators
Ghosh, Sumit; Manchon, Aurelien
2017-01-01
We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.
Spin-orbit torque in two-dimensional antiferromagnetic topological insulators
Ghosh, Sumit
2017-01-24
We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.
Cansever, H.; Narkowicz, R.; Lenz, K.; Fowley, C.; Ramasubramanian, L.; Yildirim, O.; Niesen, A.; Huebner, T.; Reiss, G.; Lindner, J.; Fassbender, J.; Deac, A. M.
2018-06-01
Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the barrier of a magnetic tunnel junction may induce pure spin-currents and generate ‘thermal’ spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nano-sized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6 × 9 µm2 ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.
Breaking the current density threshold in spin-orbit-torque magnetic random access memory
Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.
2018-04-01
Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.
Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures
Ortiz Pauyac, Christian; Wang, Xuhui; Chshiev, Mairbek; Manchon, Aurelien
2013-01-01
In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.
Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures
Ortiz Pauyac, Christian
2013-06-26
In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.
Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions
Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran
2018-02-01
We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.
Spin-Orbit Torque and Spin Pumping in YIG/Pt with Interfacial Insertion Layers (Postprint)
2018-05-03
modified by spin-orbit torque6,7 in thin- film YIG due to absorption of pure spin current,8–12 which is gen- erated from an electric current in the adjacent... films were grown on Gd3Ga5O12(111) substrates by pulsed laser deposition as reported in Ref. 3. The YIG films were transferred through an ambient... introduction into the deposition chamber, maintained at 250 C at 50 mTorr O2 for 30 min to remove water and organics on the surface. The metal overlayers
Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals
Li, Hang; Wang, Xuhui; Manchon, Aurelien
2016-01-01
We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.
Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals
Li, Hang
2016-01-11
We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.
Using torque switch settings and spring pack characteristics to determine actuator output torques
International Nuclear Information System (INIS)
Black, B.R.
1992-01-01
Actuator output torque of motor operated valves is often a performance parameter of interest. It is not always possible to directly measure this torque. Torque spring pack deflection directly reflects actuator output torque and can be directly measured on most actuators. The torque spring pack may be removed from the actuator and tested to determine its unique force-deflection relationship. Or, a representative force-deflection relationship for the particular spring pack model may be available. With either relationship, measurements of torque spring pack deflection may then be correlated to corresponding forces. If the effective length of the moment arm within the actuator is known, actuator output torque can then be determined. The output torque is simply the product of the effective moment arm length and the spring pack force. This paper presents the reliability of this technique as indicated by testing. TU Electric is evaluating this technique for potential use in the future. Results presented in this paper should be considered preliminary. Applicability of these results may be limited to actuators and their components in a condition similar to those for which test data have been examined
Spin orbit torques and Dzyaloshinskii-Moriya interaction in dual-interfaced Co-Ni multilayers
Yu, Jiawei; Qiu, Xuepeng; Wu, Yang; Yoon, Jungbum; Deorani, Praveen; Besbas, Jean Mourad; Manchon, Aurelien; Yang, Hyunsoo
2016-01-01
We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy metal (HM), while DMI is more of interfacial origin. In addition, we find that the direction of the domain wall (DW) motion can be either along or against the electron flow depending on the DW tilting angle when there is a large DMI. Such an abnormal DW motion induces a large assist field required for hysteretic magnetization reversal. Our results provide insight into the role of DMI in SOT driven magnetization switching, and demonstrate the feasibility of achieving desirable SOT and DMI for spintronic devices.
Wide operating window spin-torque majority gate towards large-scale integration of logic circuits
Vaysset, Adrien; Zografos, Odysseas; Manfrini, Mauricio; Mocuta, Dan; Radu, Iuliana P.
2018-05-01
Spin Torque Majority Gate (STMG) is a logic concept that inherits the non-volatility and the compact size of MRAM devices. In the original STMG design, the operating range was restricted to very small size and anisotropy, due to the exchange-driven character of domain expansion. Here, we propose an improved STMG concept where the domain wall is driven with current. Thus, input switching and domain wall propagation are decoupled, leading to higher energy efficiency and allowing greater technological optimization. To ensure majority operation, pinning sites are introduced. We observe through micromagnetic simulations that the new structure works for all input combinations, regardless of the initial state. Contrary to the original concept, the working condition is only given by threshold and depinning currents. Moreover, cascading is now possible over long distances and fan-out is demonstrated. Therefore, this improved STMG concept is ready to build complete Boolean circuits in absence of external magnetic fields.
Spin orbit torques and Dzyaloshinskii-Moriya interaction in dual-interfaced Co-Ni multilayers
Yu, Jiawei
2016-09-07
We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy metal (HM), while DMI is more of interfacial origin. In addition, we find that the direction of the domain wall (DW) motion can be either along or against the electron flow depending on the DW tilting angle when there is a large DMI. Such an abnormal DW motion induces a large assist field required for hysteretic magnetization reversal. Our results provide insight into the role of DMI in SOT driven magnetization switching, and demonstrate the feasibility of achieving desirable SOT and DMI for spintronic devices.
Research Update: Spin transfer torques in permalloy on monolayer MoS2
Directory of Open Access Journals (Sweden)
Wei Zhang
2016-03-01
Full Text Available We observe current induced spin transfer torque resonance in permalloy (Py grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Therefore our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.
Local spin torque induced by electron electric dipole moment in the YbF molecule
Energy Technology Data Exchange (ETDEWEB)
Fukuda, Masahiro; Senami, Masato; Ogiso, Yoji; Tachibana, Akitomo [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)
2014-10-06
In this study, we show the modification of the equation of motion of the electronic spin, which is derived by the quantum electron spin vorticity principle, by the effect of the electron electric dipole moment (EDM). To investigate the new contribution to spin torque by EDM, using first principle calculations, we visualize distributions of the local spin angular momentum density and local spin torque density of the YbF molecule on which the static electric field and magnetic field are applied at t = 0.
Analytical description of ballistic spin currents and torques in magnetic tunnel junctions
Chshiev, M.
2015-09-21
In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.
Spin-orbit torque induced magnetic vortex polarity reversal utilizing spin-Hall effect
Li, Cheng; Cai, Li; Liu, Baojun; Yang, Xiaokuo; Cui, Huanqing; Wang, Sen; Wei, Bo
2018-05-01
We propose an effective magnetic vortex polarity reversal scheme that makes use of spin-orbit torque introduced by spin-Hall effect in heavy-metal/ferromagnet multilayers structure, which can result in subnanosecond polarity reversal without endangering the structural stability. Micromagnetic simulations are performed to investigate the spin-Hall effect driven dynamics evolution of magnetic vortex. The mechanism of magnetic vortex polarity reversal is uncovered by a quantitative analysis of exchange energy density, magnetostatic energy density, and their total energy density. The simulation results indicate that the magnetic vortex polarity is reversed through the nucleation-annihilation process of topological vortex-antivortex pair. This scheme is an attractive option for ultra-fast magnetic vortex polarity reversal, which can be used as the guidelines for the choice of polarity reversal scheme in vortex-based random access memory.
Torque Coordination Control during Braking Mode Switch for a Plug-in Hybrid Electric Vehicle
Yang Yang; Chao Wang; Quanrang Zhang; Xiaolong He
2017-01-01
Hybrid vehicles usually have several braking systems, and braking mode switches are significant events during braking. It is difficult to coordinate torque fluctuations caused by mode switches because the dynamic characteristics of braking systems are different. In this study, a new type of plug-in hybrid vehicle is taken as the research object, and braking mode switches are divided into two types. The control strategy of type one is achieved by controlling the change rates of clutch hold-dow...
Spin torque oscillator for microwave assisted magnetization reversal
Taniguchi, Tomohiro; Kubota, Hitoshi
2018-05-01
A theoretical study is given for the self-oscillation excited in a spin torque oscillator (STO) consisting of an in-plane magnetized free layer and a perpendicularly magnetized pinned layer in the presence of a perpendicular magnetic field. This type of STO is a potential candidate for a microwave source of microwave assisted magnetization reversal (MAMR). It is, however, found that the self-oscillation applicable to MAMR disappears when the perpendicular field is larger than a critical value, which is much smaller than a demagnetization field. This result provides a condition that the reversal field of a magnetic recording bit by MAMR in nanopillar structure should be smaller than the critical value. The analytical formulas of currents determining the critical field are obtained, which indicate that a material with a small damping is not preferable to acheive a wide range of the self-oscillation applicable to MAMR, although such a material is preferable from the viewpoint of the reduction of the power consumption.
Multi-Valued Spin Switch in a Semiconductor Microcavity
Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.
2011-12-01
In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.
Optical switching of nuclear spin-spin couplings in semiconductors.
Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi
2011-07-05
Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.
Energy Technology Data Exchange (ETDEWEB)
Zhou Yan; Bonetti, S; Zha, C L; Akerman, Johan [Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden)], E-mail: zhouyan@kth.se
2009-10-15
Using nonlinear system theory and numerical simulations, we map out the static and dynamic phase diagrams in the zero applied field of a spin torque nano device with a tilted polarizer (TP). We find that for sufficiently large currents, even very small tilt angles ({beta}>1 deg.) will lead to steady free layer precession in zero field. Within a rather large range of tilt angles, 1 deg. <{beta}<19 deg., we find coexisting static states and hysteretic switching between these using only current. In a more narrow window (1 deg. <{beta}<5 deg.) one of the static states turns into a limit cycle (precession). The coexistence of current-driven static and dynamic states in the zero magnetic field is unique to the TP device and leads to large hysteresis in the upper and lower threshold currents for its operation. The nano device with TP can facilitate the generation of large amplitude mode of spin torque signals without the need for cumbersome magnetic field sources and thus should be very important for future telecommunication applications based on spin transfer torque effects.
Directory of Open Access Journals (Sweden)
S. R. Mousavi-Aghdam
2012-03-01
Full Text Available This paper presents a new design to reduce torque ripple in Switched Reluctance Motors (SRM. Although SRM possesses many advantages in terms of motor structure, it suffers from large torque ripple that causes problems such as vibration and acoustic noise. The paper describes new rotor and stator pole shapes with a non-uniform air gap profile to reduce torque ripple while retaining its average value. An optimization using fuzzy strategy is successfully performed after sensitivity analysis. The two dimensional (2-D finite element method (FEM results, have demonstrated validity of the proposed new design.
Energy Technology Data Exchange (ETDEWEB)
Sethi, P.; Krishnia, S.; Li, S.H.; Lew, W.S., E-mail: wensiang@ntu.edu.sg
2017-03-15
We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.
Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness
International Nuclear Information System (INIS)
Wilczynski, M.
2011-01-01
Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.
Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence
Manchon, Aurelien; Zhang, S.; Lee, K.-J.
2010-01-01
The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.
Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence
Manchon, Aurelien
2010-11-15
The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.
Analytical Prediction of the Spin Stabilized Satellite's Attitude Using The Solar Radiation Torque
International Nuclear Information System (INIS)
Motta, G B; Carvalho, M V; Zanardi, M C
2013-01-01
The aim of this paper is to present an analytical solution for the spin motion equations of spin-stabilized satellite considering only the influence of solar radiation torque. The theory uses a cylindrical satellite on a circular orbit and considers that the satellite is always illuminated. The average components of this torque were determined over an orbital period. These components are substituted in the spin motion equations in order to get an analytical solution for the right ascension and declination of the satellite spin axis. The time evolution for the pointing deviation of the spin axis was also analyzed. These solutions were numerically implemented and compared with real data of the Brazilian Satellite of Data Collection – SCD1 an SCD2. The results show that the theory has consistency and can be applied to predict the spin motion of spin-stabilized artificial satellites
Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals
Kurebayashi, Daichi; Nomura, Kentaro
2016-10-01
We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.
Magnetization switching and microwave oscillations in nanomagnets driven by spin-polarized currents
International Nuclear Information System (INIS)
Bertotti, G.; Magni, A.; Serpico, C.; d'Aquino, M.; Mayergoyz, I. D.; Bonin, R.
2005-01-01
Full text: Considerable interest has been generated in recent years by the discovery that a current of spin-polarized electrons can apply appreciable torques to a nanoscale ferromagnet. This mechanism was theoretically predicted and subsequently confirmed by a number of experiments which have shown that spin transfer can indeed induce switching or microwave oscillations of the magnetization. Significant efforts have been devoted to the explanation of these results, in view of the new physics involved and of the possible applications to new types of current-controlled memory cells or microwave sources and resonators . However, the precise nature of magnetization dynamics when spin-polarized currents and external magnetic fields are simultaneously present has not yet been fully understood. The spin-transfer-driven nanomagnet is a nonlinear open system that is forced far from equilibrium by the injection of the current. Thus, the appropriate framework for the study of the problem is nonlinear dynamical system theory and bifurcation theory. In this talk, it is shown that within this framework the complexity and subtlety of spin-torque effects are fully revealed and quantified, once it is recognized that both intrinsic damping and spin transfer can be treated as perturbations of the free precessional dynamics typical of ferromagnetic resonance. Complete stability diagrams are derived for the case where spin torques and external magnetic fields are simultaneously present. Quantitative predictions are made for the critical currents and fields inducing magnetization switching; for the amplitude and frequency of magnetization self-oscillations; for the conditions leading to hysteretic transitions between self-oscillations and stationary states
First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions
Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano
2017-02-01
We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.
Bodnar, S Yu; Šmejkal, L; Turek, I; Jungwirth, T; Gomonay, O; Sinova, J; Sapozhnik, A A; Elmers, H-J; Kläui, M; Jourdan, M
2018-01-24
Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn 2 Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn 2 Au(001) thin films were generated by pulse current densities of ≃10 7 A/cm 2 . The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.
Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance
Vlietstra, N.; Shan, J.; Castel, V.; Ben Youssef, J.; Bauer, G. E. W.; van Wees, B. J.
2013-01-01
The effective field torque of an yttrium-iron-garnet (YIG) film on the spin accumulation in an attached platinum (Pt) film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental
Out-of-plane spin-transfer torques: First-principles study
Czech Academy of Sciences Publication Activity Database
Carva, K.; Turek, Ilja
2010-01-01
Roč. 322, 9-12 (2010), s. 1085-1087 ISSN 0304-8853. [Joint European Magnetic Symposia /4./. Dublin, 14.09.2008-19.09.2008] Institutional research plan: CEZ:AV0Z20410507 Keywords : spin-transfer torque * spin-mixing conductance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.689, year: 2010
Yuan, Z.; Kelly, Paul J.
2016-01-01
To study the effect of spin-orbit coupling (SOC) on spin-transfer torque in magnetic materials, we have implemented two theoretical formalisms that can accommodate SOC. Using the “charge-pumping” formalism, we find two contributions to the out-of-plane spin-transfer torque parameter β in ballistic
Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions
Manchon, Aurelien
2011-01-01
Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.
Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures
Energy Technology Data Exchange (ETDEWEB)
Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun; Mann, Maxwell; Beach, Geoffrey S. D., E-mail: gbeach@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
2016-06-06
We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.
Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions
Manchon, Aurelien
2011-10-01
Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.
Theory of in-plane current induced spin torque in metal/ferromagnet bilayers
Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei
2018-05-01
Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.
Spin force and torque in non-relativistic Dirac oscillator on a sphere
Shikakhwa, M. S.
2018-03-01
The spin force operator on a non-relativistic Dirac oscillator (in the non-relativistic limit the Dirac oscillator is a spin one-half 3D harmonic oscillator with strong spin-orbit interaction) is derived using the Heisenberg equations of motion and is seen to be formally similar to the force by the electromagnetic field on a moving charged particle. When confined to a sphere of radius R, it is shown that the Hamiltonian of this non-relativistic oscillator can be expressed as a mere kinetic energy operator with an anomalous part. As a result, the power by the spin force and torque operators in this case are seen to vanish. The spin force operator on the sphere is calculated explicitly and its torque is shown to be equal to the rate of change of the kinetic orbital angular momentum operator, again with an anomalous part. This, along with the conservation of the total angular momentum, suggests that the spin force exerts a spin-dependent torque on the kinetic orbital angular momentum operator in order to conserve total angular momentum. The presence of an anomalous spin part in the kinetic orbital angular momentum operator gives rise to an oscillatory behavior similar to the Zitterbewegung. It is suggested that the underlying physics that gives rise to the spin force and the Zitterbewegung is one and the same in NRDO and in systems that manifest spin Hall effect.
Fast torque estimation of in-wheel parallel flux switching machines
Ilhan, E.; Paulides, J.J.H.; Lomonova, E.
2010-01-01
Parallel ux switching machines (PFSM) come forward in automotive industry as a promising candidate for hybrid truck applications due to their high power density. Torque calculations, i.e cogging and electromagnetic, are important features of these machines, which require a ??nite element model (FEM)
International Nuclear Information System (INIS)
Puliafito, V.; Consolo, G.; Lopez-Diaz, L.; Azzerboni, B.
2014-01-01
This work tackles theoretical investigations on the synchronization of spin-wave modes generated by spin-transfer-torque in a double nano-contact geometry. The interaction mechanisms between the resulting oscillators are analyzed in the case of propagating modes which are excited via a normal-to-plane magnetic bias field. To characterize the underlying physical mechanisms, a multi-domain analysis is performed. It makes use of an equivalent electrical circuit, to deduce the output electrical power, and of micromagnetic simulations, through which information on the frequency spectra and on the spatial distribution of the wavefront of the emitted spin-waves is extracted. This study provides further and intriguing insights into the physical mechanisms giving rise to synchronization of spin-torque oscillators
Spin-wave interference patterns created by spin-torque nano-oscillators for memory and computation
International Nuclear Information System (INIS)
Macia, Ferran; Kent, Andrew D; Hoppensteadt, Frank C
2011-01-01
Magnetization dynamics in nanomagnets has attracted broad interest since it was predicted that a dc current flowing through a thin magnetic layer can create spin-wave excitations. These excitations are due to spin momentum transfer, a transfer of spin angular momentum between conduction electrons and the background magnetization, that enables new types of information processing. Here we show how arrays of spin-torque nano-oscillators can create propagating spin-wave interference patterns of use for memory and computation. Memristic transponders distributed on the thin film respond to threshold tunnel magnetoresistance values, thereby allowing spin-wave detection and creating new excitation patterns. We show how groups of transponders create resonant (reverberating) spin-wave interference patterns that may be used for polychronous wave computation and information storage.
Minimal model of spin-transfer torque and spin pumping caused by the spin Hall Effect
Czech Academy of Sciences Publication Activity Database
Chen, W.; Sigrist, M.; Sinova, Jairo; Manske, D.
2016-01-01
Roč. 115, č. 21 (2016), 1-5, č. článku 217203. ISSN 0031-9007 Institutional support: RVO:68378271 Keywords : spintronics * spin Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 8.462, year: 2016
International Nuclear Information System (INIS)
Larik, A.S.
2010-01-01
The direct-on-line starting of induction motor draws heavy current and to limit this Inrush current to a safe level normally a star-delta switch is used. However, the switching over from star to delta causes over current transients and this leads to torque pulsations. Therefore, in this paper the current and torque pulsations developed during the switching process are focused and a soft-switched controller is devised to minimize the re-closure transient currents and torque pulsations during star-delta switching of induction motor. The designed system can readily handles the sensing of favorable conditions of re closure of a switched-off running induction motor and it minimizes the inrush current and hence the pulsations of torque of all types of induction motors, whether, single-phase or three phase. An investigation is made into the transient currents and pulsation torques generated due to opening the circuit of a running induction motor and the switching pattern of star-delta switching. The re-switching control scheme for the induction motor is practically tested in the laboratory with and without soft controller. (author)
International Nuclear Information System (INIS)
Navardi, Mohammad Javad; Babaghorbani, Behnaz; Ketabi, Abbas
2014-01-01
Highlights: • This paper proposes a new method to optimize a Switched Reluctance Motor (SRM). • A combination of SOA and GA with Finite Element Method (FEM) analysis is employed to solve the SRM design optimization. • The results show that optimized SRM obtains higher average torque and higher efficiency. - Abstract: In this paper, performance optimization of Switched Reluctance Motor (SRM) was determined using Seeker Optimization Algorithm (SOA). The most efficient aim of the algorithm was found for maximum torque value at a minimum mass of the entire construction, following changing the geometric parameters. The optimization process was carried out using a combination of Seeker Optimization Algorithm and Finite Element Method (FEM). Fitness value was calculated by FEM analysis using COMSOL3.4, and the SOA was realized by MATLAB. The proposed method has been applied for a case study and it has been also compared with Genetic Algorithm (GA). The results show that the optimized motor using SOA had higher torque value and efficiency with lower mass and torque ripple, exhibiting the validity of this methodology for SRM design
Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect
Energy Technology Data Exchange (ETDEWEB)
Tomasello, R., E-mail: tomasello@deis.unical.it [Department of Computer Science, Modelling, Electronics, and System Science, University of Calabria, Rende, CS (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy)
2014-05-07
This paper predicts the effect of the Dzyaloshinskii-Moriya interaction (DMI) and spin Hall effect in the spin-torque diode response of a Magnetic Tunnel Junction built over a Tantalum strip. Our results indicate that, for a microwave current large enough, the DMI can change qualitatively the resonant response by splitting the ferromagnetic resonance peak. We also find out that the two modes have a non-uniform spatial distribution.
Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect
International Nuclear Information System (INIS)
Tomasello, R.; Carpentieri, M.; Finocchio, G.
2014-01-01
This paper predicts the effect of the Dzyaloshinskii-Moriya interaction (DMI) and spin Hall effect in the spin-torque diode response of a Magnetic Tunnel Junction built over a Tantalum strip. Our results indicate that, for a microwave current large enough, the DMI can change qualitatively the resonant response by splitting the ferromagnetic resonance peak. We also find out that the two modes have a non-uniform spatial distribution
International Nuclear Information System (INIS)
Huang, Houbing; Zhao, Congpeng; Ma, Xingqiao
2017-01-01
We investigated stress-modulated magnetization precession frequency in Heusler-based spin transfer torque oscillator by combining micromagnetic simulations with phase field microelasticity theory, by encapsulating the magnetic tunnel junction into multilayers structures. We proposed a novel method of using an external stress to control the magnetization precession in spin torque oscillator instead of an external magnetic field. The stress-modulated magnetization precession frequency can be linearly modulated by externally applied uniaxial in-plane stress, with a tunable range 4.4–7.0 GHz under the stress of 10 MPa. By comparison, the out-of-plane stress imposes negligible influence on the precession frequency due to the large out-of-plane demagnetization field. The results offer new inspiration to the design of spin torque oscillator devices that simultaneously process high frequency, narrow output band, and tunable over a wide range of frequencies via external stress. - Highlights: • We proposed stress-modulated magnetization precession in spin torque oscillator. • The magnetization precession frequency can be linearly modulated by in-plane stress. • The stress also can widen the magnetization frequency range 4.4–7.0 GHz. • The stress-modulated oscillation frequency can simplify STO devices.
Spin-transfer torques in antiferromagnetic textures: efficiency and quantification method
Czech Academy of Sciences Publication Activity Database
Yamane, Y.; Ieda, J.; Sinova, Jairo
2016-01-01
Roč. 94, č. 5 (2016), 1-8, č. článku 054409. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : spin-transfer torques * antiferromagnets Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.836, year: 2016
Mutual phase-locking of several spin-torque nano-oscillators
International Nuclear Information System (INIS)
Prokopenko, O.V.; Sulimenko, O.R.
2011-01-01
Criterions for evaluating the effectiveness of mutual phase-locking of several spin-torque nano-oscillators (STNO) are proposed. An application of one of the criterions to describe the process of mutual phase-locking of the three almost identical STNO's is considered
Motion of the hot spot and spin torque in accreting millisecond pulsars
Patruno, A.
2008-01-01
The primary concern of this contribution is that accreting millisecond pulsars (AMXPs) show a much larger amount of information than is commonly believed. The three questions to be addressed are: 1. Is the apparent spin torque observed in AMXPs real ? 2. Why do we see correlations and
Energy Technology Data Exchange (ETDEWEB)
Huang, Houbing, E-mail: hbhuang@ustb.edu.cn; Zhao, Congpeng; Ma, Xingqiao, E-mail: xqma@sas.ustb.edu.cn
2017-03-15
We investigated stress-modulated magnetization precession frequency in Heusler-based spin transfer torque oscillator by combining micromagnetic simulations with phase field microelasticity theory, by encapsulating the magnetic tunnel junction into multilayers structures. We proposed a novel method of using an external stress to control the magnetization precession in spin torque oscillator instead of an external magnetic field. The stress-modulated magnetization precession frequency can be linearly modulated by externally applied uniaxial in-plane stress, with a tunable range 4.4–7.0 GHz under the stress of 10 MPa. By comparison, the out-of-plane stress imposes negligible influence on the precession frequency due to the large out-of-plane demagnetization field. The results offer new inspiration to the design of spin torque oscillator devices that simultaneously process high frequency, narrow output band, and tunable over a wide range of frequencies via external stress. - Highlights: • We proposed stress-modulated magnetization precession in spin torque oscillator. • The magnetization precession frequency can be linearly modulated by in-plane stress. • The stress also can widen the magnetization frequency range 4.4–7.0 GHz. • The stress-modulated oscillation frequency can simplify STO devices.
Nguyen, Minh-Hai; Shi, Shengjie; Rowlands, Graham E.; Aradhya, Sriharsha V.; Jermain, Colin L.; Ralph, D. C.; Buhrman, R. A.
2018-02-01
Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies.
Role of phase breaking processes on resonant spin transfer torque nano-oscillators
Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran
2018-05-01
Spin transfer torque nano-oscillators (STNOs) based on magnetoresistance and spin transfer torque effects find potential applications in miniaturized wireless communication devices. Using the non-coherent non-equilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation, we elucidate the role of elastic phase breaking on the proposed STNO design featuring double barrier resonant tunneling. Demonstrating the immunity of our proposed design, we predict that despite the presence of elastic dephasing, the resonant tunneling magnetic tunnel junction structures facilitate oscillator designs featuring a large enhancement in microwave power up to 8μW delivered to a 50Ω load.
International Nuclear Information System (INIS)
Ichimura, M; Hamada, T; Imamura, H; Takahashi, S; Maekawa, S
2010-01-01
Based on a spin-polarized free-electron model, spin and charge transports are analyzed in magnetic tunnel junctions with synthetic ferrimagnetic layers in the ballistic regime, and the spin transfer torque is derived. We characterize the synthetic ferrimagnetic free layer by extending an arbitrary direction of magnetizations of the two free layers forming the synthetic ferrimagnetic free layer. The synthetic ferrimagnetic configuration exerts the approximately optimum torque for small magnetization angle of the first layer relative to that of the pinned layer. For approximately anti-parallel magnetization of the first layer to that of the pinned layer, the parallel magnetization of two magnetic layers is favorable for magnetization reversal rather than the synthetic ferrimagnetic configuration.
International Nuclear Information System (INIS)
Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.
2015-01-01
We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory
Spin torque nanooscillators: new applications in information processing
Macia, Ferran; Kent, Andrew D.; Hoppensteadt, Frank C.
2013-03-01
Nanonometer scale electrical contacts to ferromagnetic thin films (STNOs) can provide sufficient current densities to excite magnetic-moment dynamics resulting in emission of short wave-length spin waves. We discuss several applications of spin-wave patterns created from STNOs and their interaction with background oscillations. We review how to encode information in STNOs signals -modulating their amplitude, frequency or phase - and stability against noise. We first model arrays of STNOs in extended ferromagnetic thin films and define conditions to control spin-waves emission directions. We also study arrays of oscillators in patterned ferromagnetic thin films and we put forward a method to build an STNO lookup tables or an STNO based network analyzer. Using spin waves complements digital semiconductor technologies and offers new possibilities for increased memory capacity and computation performance. This work was supported by Marie Curie IOF 253214 and by ARO MURI Grant No. W911NF-08-1-0317 and NSF Grant No. ECS 07- 25280.
Li, Yi; de Milly, Xavier; Klein, Olivier; Cros, Vincent; Grollier, Julie; de Loubens, Grégoire
2018-01-01
Manipulating operation states of coupled spin-torque nano-oscillators (STNOs), including their synchronization, is essential for applications such as complex oscillator networks. In this work, we experimentally demonstrate selective control of two coupled vortex STNOs through microwave-assisted switching of their vortex core polarities. First, the two oscillators are shown to synchronize due to the dipolar interaction in a broad frequency range tuned by an external biasing field. Coherent output is demonstrated along with strong linewidth reduction. Then, we show individual vortex polarity control of each oscillator, which leads to synchronization/desynchronization due to accompanied frequency shift. Our methods can be easily extended to multiple-element coupled oscillator networks.
International Nuclear Information System (INIS)
Bang, Do; Awano, Hiroyuki
2015-01-01
We investigated current-induced DW motion in asymmetric interfacial multilayered Tb/Co wires for various thicknesses of magnetic and Pt-capping layers. It is found that the driving mechanism for the DW motion changes from interfacial to bulk effects at much thick magnetic layer (up to 19.8 nm). In thin wires, linearly depinning field dependence of critical current density and in-plane field dependence of DW velocity suggest that the extrinsic pinning governs field-induced DW motion and injecting current can be regarded as an effective field. It is expected that the high efficiency of spin-orbit torques in thick magnetic multilayers would have important implication for future spintronic devices based on in-plane current induced-DW motion or switching
Energy Technology Data Exchange (ETDEWEB)
Bang, Do, E-mail: bang@spin.mp.es.osaka-u.ac.jp [Toyota Technological Institute, Tempaku, Nagoya 468-8511 (Japan); Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Hanoi (Viet Nam); Awano, Hiroyuki [Toyota Technological Institute, Tempaku, Nagoya 468-8511 (Japan)
2015-05-07
We investigated current-induced DW motion in asymmetric interfacial multilayered Tb/Co wires for various thicknesses of magnetic and Pt-capping layers. It is found that the driving mechanism for the DW motion changes from interfacial to bulk effects at much thick magnetic layer (up to 19.8 nm). In thin wires, linearly depinning field dependence of critical current density and in-plane field dependence of DW velocity suggest that the extrinsic pinning governs field-induced DW motion and injecting current can be regarded as an effective field. It is expected that the high efficiency of spin-orbit torques in thick magnetic multilayers would have important implication for future spintronic devices based on in-plane current induced-DW motion or switching.
Giant spin torque in hybrids with anisotropic p-d exchange interaction
Korenev, V. L.
2014-03-01
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 104 A/cm2 in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics.
Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide
DEFF Research Database (Denmark)
Javadi, Alisa; Ding, Dapeng; Appel, Martin Hayhurst
2018-01-01
Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates between photons [2,5] or to entangle remote spin states [6......-9]. Ultimately, a quantum network of entangled spins constitutes a new paradigm in quantum optics [1]. Towards this goal, an integrated spin-photon interface would be a major leap forward. Here we demonstrate an efficient and optically programmable interface between the spin of an electron in a quantum dot...... and photons in a nanophotonic waveguide. The spin can be deterministically prepared with a fidelity of 96\\%. Subsequently the system is used to implement a "single-spin photonic switch", where the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may...
Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory
Directory of Open Access Journals (Sweden)
Austin Deschenes
2016-11-01
Full Text Available Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM. Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ, most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.
Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya
2018-06-01
We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.
Mechanical torques generated by optically pumped atomic spin relaxation at surfaces
International Nuclear Information System (INIS)
Herman, R.M.
1982-01-01
It is argued that a valuable method of observing certain types of surface-atom interactions may lie in mechanical torques generated through the spin-orbit relaxation of valence electronic spins of optically pumped atoms at surfaces. The unusual feature of this phenomenon is that the less probable spin-orbit relaxation becomes highly visible as compared with the much more rapid paramagnetic relaxation, because of an enhancement, typically by as much as a factor 10 9 , in the torques delivered to mechanical structures, by virtue of a very large effective moment arm. Spin-orbit relaxation operates through an exchange of translational momentum which, in turn, can be identified with the delivery of a gigantic angular momentum (in units of h) relative to a distant axis about which mechanical motion is referred. The spin-orbit relaxation strongly depends upon the atomic number of the surface atoms and the strength of interaction with the optically pumped atoms. Being dominated by high-atomic-number surface atoms, spin-orbit relaxation rates may not be too strongly influenced by minor surface contamination of lighter-weight optically active atoms
Mechanical torques generated by optically pumped atomic spin relaxation at surfaces
Herman, R. M.
1982-03-01
It is argued that a valuable method of observing certain types of surface-atom interactions may lie in mechanical torques generated through the spin-orbit relaxation of valence electronic spins of optically pumped atoms at surfaces. The unusual feature of this phenomenon is that the less probable spin-orbit relaxation becomes highly visible as compared with the much more rapid paramagnetic relaxation, because of an enhancement, typically by as much as a factor 109, in the torques delivered to mechanical structures, by virtue of a very large effective moment arm. Spin-orbit relaxation operates through an exchange of translational momentum which, in turn, can be identified with the delivery of a gigantic angular momentum (in units of ℏ) relative to a distant axis about which mechanical motion is referred. The spin-orbit relaxation strongly depends upon the atomic number of the surface atoms and the strength of interaction with the optically pumped atoms. Being dominated by high-atomic-number surface atoms, spin-orbit-relaxation rates may not be too strongly influenced by minor surface contamination of lighter-weight optically active atoms.
Possible evidence for spin-transfer torque induced by spin-triplet supercurrent
Li, Lailai; Zhao, Yuelei; Zhang, Xixiang; Sun, Young
2017-01-01
Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin
A High Torque Segmented Outer Rotor Permanent Magnet Flux Switching Motor for Motorcycle Propulsion
Directory of Open Access Journals (Sweden)
Mbadiwe I Enwelum
2018-01-01
Full Text Available Electric scooters also known as electric motorcycle are viable and personal means of road transportation have been making their ways into the world markets now because in them, combustion engine with the use of fuel oil for propulsion have been completely eliminated for economic and environmental imperatives. Electric motor which converts electrical energy into mechanical energy is used to overcome the complication of combustion engine. As it is, everyone is opting for combustion engine free and fuel-less type of vehicle. For this reason, manufacturers have exhibited interest, making research on electric motor very attractive. Meanwhile, surface permanent magnet synchronous motor (SPMSM has been successfully developed having output torque of 110 Nm, the assembly of motor lacked mechanical strength between the rotor yoke and the mounted permanent magnet (PM which heats up during speed operation, resulting to poor performance. To overcome the challenges laced with SPMSM, this paper presents a novel design of 24 stator 14 pole outer rotor-permanent magnet flux switching motor (SOR-PMFSM capable of high torque and high performance. It employs an unconventional segmented rotor which has short flux path flow. It also embraces alternate stator tooth windings to reduce material cost. Design specifications and restriction with input DC current are the same with SPMSM. The 2D-FEA by JMAG, version 14 is used to examine the performance of the proposed motor in terms of cogging torque, back-emf, average torque, power and efficiency. Preliminary results showed that torque, power output and efficiency of the proposed motor are 1.9Nm times, 5.8kW times more than SPMSM and efficiency of 84% thus, can sustain acceleration for long distance travel.
Experimental observation of the optical spin transfer torque
Czech Academy of Sciences Publication Activity Database
Němec, P.; Rozkotová, E.; Tesařová, N.; Trojánek, F.; De Ranieri, E.; Olejník, Kamil; Zemen, Jan; Novák, Vít; Cukr, Miroslav; Malý, P.; Jungwirth, Tomáš
2012-01-01
Roč. 8, č. 5 (2012), s. 411-415 ISSN 1745-2473 R&D Projects: GA ČR GD202/09/H041; GA MŠk LC510 EU Projects: European Commission(XE) 268066 - 0MSPIN; European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : magneto-optics * magnetization dynamics * ferromagnetic semiconductors Subject RIV: BH - Optics, Masers, Lasers Impact factor: 19.352, year: 2012 http://arxiv.org/abs/1201.1436
Experimental observation of the optical spin-orbit torque
Czech Academy of Sciences Publication Activity Database
Tesařová, N.; Němec, P.; Rozkotová, E.; Zemen, Jan; Janda, T.; Butkovičová, D.; Trojánek, F.; Olejník, Kamil; Novák, Vít; Malý, P.; Jungwirth, Tomáš
2013-01-01
Roč. 7, Jun (2013), s. 493-499 ISSN 1749-4885 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GD202/09/H041 EU Projects: European Commission(XE) 268066 - 0MSPIN; European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Keywords : ferromagnetic semiconductor * magneto-optical spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 29.958, year: 2013
International Nuclear Information System (INIS)
Richins, W.D.; Snow, S.D.; Miller, G.K.; Russell, M.J.; Ware, A.G.
1995-12-01
Some motor operated valves now have higher torque switch settings due to regulatory requirements to ensure valve operability with appropriate margins at design basis conditions. Verifying operability with these settings imposes higher stem loads during periodic inservice testing. These higher test loads increase stresses in the various valve internal parts which may in turn increase the fatigue usage factors. This increased fatigue is judged to be a concern primarily in the valve disks, seats, yokes, stems, and stem nuts. Although the motor operators may also have significantly increased loading, they are being evaluated by the manufacturers and are beyond the scope of this study. Two gate valves representative of both relatively weak and strong valves commonly used in commercial nuclear applications were selected for fatigue analyses. Detailed dimensional and test data were available for both valves from previous studies at the Idaho National Engineering Laboratory. Finite element models were developed to estimate maximum stresses in the internal parts of the valves and to identity the critical areas within the valves where fatigue may be a concern. Loads were estimated using industry standard equations for calculating torque switch settings prior and subsequent to the testing requirements of USNRC Generic Letter 89--10. Test data were used to determine both; (1) the overshoot load between torque switch trip and final seating of the disk during valve closing and (2) the stem thrust required to open the valves. The ranges of peak stresses thus determined were then used to estimate the increase in the fatigue usage factors due to the higher stem thrust loads. The usages that would be accumulated by 100 base cycles plus one or eight test cycles per year over 40 and 60 years of operation were calculated
Negative optical spin torque wrench of a non-diffracting non-paraxial fractional Bessel vortex beam
International Nuclear Information System (INIS)
Mitri, F.G.
2016-01-01
An absorptive Rayleigh dielectric sphere in a non-diffracting non-paraxial fractional Bessel vortex beam experiences a spin torque. The axial and transverse radiation spin torque components are evaluated in the dipole approximation using the radiative correction of the electric field. Particular emphasis is given on the polarization as well as changing the topological charge α and the half-cone angle of the beam. When α is zero, the axial spin torque component vanishes. However, when α becomes a real positive number, the vortex beam induces left-handed (negative) axial spin torque as the sphere shifts off-axially from the center of the beam. The results show that a non-diffracting non-paraxial fractional Bessel vortex beam is capable of inducing a spin reversal of an absorptive Rayleigh sphere placed arbitrarily in its path. Potential applications are yet to be explored in particle manipulation, rotation in optical tweezers, optical tractor beams, and the design of optically-engineered metamaterials to name a few areas. - Highlights: • Optical nondiffracting nonparaxial fractional Bessel vortex beam is considered. • Negative spin torque on an absorptive dielectric Rayleigh sphere is predicted numerically. • Negative spin torque occurs as the sphere departs from the center of the beam.
Non-linear frequency and amplitude modulation of a nano-contact spin torque oscillator
Muduli, P. K.; Pogoryelov, Ye.; Bonetti, S.; Consolo, G.; Mancoff, Fred; Åkerman, Johan
2009-01-01
We study the current controlled modulation of a nano-contact spin torque oscillator. Three principally different cases of frequency non-linearity ($d^{2}f/dI^{2}_{dc}$ being zero, positive, and negative) are investigated. Standard non-linear frequency modulation theory is able to accurately describe the frequency shifts during modulation. However, the power of the modulated sidebands only agrees with calculations based on a recent theory of combined non-linear frequency and amplitude modulation.
Nonadiabatic Spin Torque Investigated Using Thermally Activated Magnetic Domain Wall Dynamics
DEFF Research Database (Denmark)
Eltschka, M.; Woetzel, Mathias; Rhensius, J.
2010-01-01
of the DW as a quasiparticle in a one-dimensional potential landscape. By injecting small currents, the potential is modified, allowing for the determination of the nonadiabatic spin torque: βt=0.010±0.004 for a transverse DW and βv=0.073±0.026 for a vortex DW. The larger value is attributed to the higher...
Spin-transfer torque induced dynamics of magnetic vortices in nanopillars
International Nuclear Information System (INIS)
Sluka, Volker
2011-01-01
The subject of this work are lithographically defined cylindrical nanopillars containing a stack of two Iron disks separated by a nonmagnetic spacer. The dimensions of the ferromagnetic disks are chosen such that at low magnetic fields, the so-called magnetic vortex is stabilized. In zero field, the magnetization of these objects is basically parallel to the disk plane and circulates the disk center. In doing so, the build-up of large in-plane stray fields is avoided. At the center of this distribution however, exchange forces turn the magnetization out of the disk plane, resulting in the formation of what is referred to as the vortex core. Magnetic vortices have attracted much attention in recent years. This interest is in large parts due to the highly interesting dynamic properties of these structures. In this work the static and dynamic properties of magnetic vortices and their behavior under the influence of spin-transfer torque are investigated. This is achieved by measuring the static and time dependent magnetoresistance under the influence of external magnetic fields. The samples allow the formation of a large variety of states. First, the focus is set on configurations, where one disk is in a vortex state while the other one is homogeneously magnetized. It is shown that spin-transfer torque excites the vortex gyrotropic mode in this configuration. The dependence of the mode frequency on the magnetic field is analyzed. The measurements show that as the vortex center of gyration shifts through the disk under the action of the magnetic field, the effective potential in which it is moving undergoes a change in shape. This shape change is reflected in a V-shaped field dependence of the gyration frequency. Analytical calculations are performed to investigate the effect of the asymmetry of the spin-transfer torque efficiency function on the vortex dynamics. It is shown that by means of asymmetry, spin-transfer torque can transfer energy to a gyrating vortex even
Oh, Se Chung; Park, Seung Young; Manchon, Aurelien; Chshiev, Mairbek; Han, Jae Ho; Lee, Hyun Woo; Lee, Jang Eun; Nam, Kyung Tae; Jo, Younghun; Kong, Yo Chan; Dieny, Bernard; Lee, Kyung Jin
2009-01-01
Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.
Oh, Se Chung
2009-10-25
Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.
Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar
2018-01-01
Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.
Bhoomeeswaran, H.; Vivek, T.; Sabareesan, P.
2018-04-01
In this article, we have theoretically devised a Spin Torque Nano Oscillator (STNO) with perpendicular polarizer using macro spin model. The devised spin valve structure is heterogeneous (i.e.) it is made of two different ferromagnetic materials [Co and its alloy CoFeB]. The dynamics of magnetization provoked by spin transfer torque is studied numerically by solving the famous Landau-Lifshitz-Gilbert-Slonczewski [LLGS] equation. The results are obtained for the perpendicular polarizer and for that particular out of plane orientation we vary the free layer angle from 10° to 90°. The obtained results are highly appealing, because frequency range is available in all the tilt angles of free layer and it is exceptionally tunable in all free layer tilt angles with zero applied field. Moreover, the utmost operating frequency of about 83.3 GHz and its corresponding power of 4.488 µW/mA2/GHz is acquired for the free layer tilt angle θ = 90° with the solid applied current density of 10 × 1010 A/m2. Also, our device emits high quality factor of about 396, which is remarkably desirable for making devices. These pioneering results provides a significant development for future spintronic based devices.
All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions
Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu
2011-04-01
A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.
Aradhya, Sriharsha; Rowlands, Graham; Shi, Shengjie; Oh, Junseok; Ralph, D. C.; Buhrman, Robert
Magnetic random access memory (MRAM) using spin transfer torques (STT) holds great promise for replacing existing best-in-class memory technologies in several application domains. Research on conventional two-terminal STT-MRAM thus far has revealed the existence of limitations that constrain switching reliability and speed for both in-plane and perpendicularly magnetized devices. Recently, spin torque arising from the giant spin-Hall effect in Ta, W and Pt has been shown to be an efficient mechanism to switch magnetic bits in a three-terminal geometry. Here we report highly reliable, nanosecond timescale pulse switching of three-terminal devices with in-plane magnetized magnetic tunnel junctions. We obtain write error rates (WER) down to ~10-5 using pulses as short as 2 ns, in contrast to conventional in-plane STT-MRAM devices where write speeds were limited to a few tens of nanoseconds for comparable WER. Utilizing micro-magnetic simulations, we discuss the differences from conventional MRAM that allow for this unanticipated and significant performance improvement. Finally, we highlight the path towards practical application enabled by the ability to separately optimize the read and write pathways in three-terminal devices.
Steady motion of skyrmions and domains walls under diffusive spin torques
Elías, Ricardo Gabriel
2017-03-09
We explore the role of the spin diffusion of conducting electrons in two-dimensional magnetic textures (domain walls and skyrmions) with spatial variation of the order of the spin precession length λex. The effect of diffusion reflects in four additional torques that are third order in spatial derivatives of magnetization and bilinear in λex and in the nonadiabatic parameter β′. In order to study the dynamics of the solitons when these diffusive torques are present, we derive the Thiele equation in the limit of steady motion and we compare the results with the nondiffusive limit. When considering a homogenous current these torques increase the longitudinal velocity of transverse domain walls of width Δ by a factor (λex/Δ)2(α/3), α being the magnetic damping constant. In the case of single skyrmions with core radius r0 these new contributions tend to increase the Magnus effect in an amount proportional to (λex/r0)2(1+2αβ′).
Steady motion of skyrmions and domains walls under diffusive spin torques
Elí as, Ricardo Gabriel; Vidal-Silva, Nicolas; Manchon, Aurelien
2017-01-01
We explore the role of the spin diffusion of conducting electrons in two-dimensional magnetic textures (domain walls and skyrmions) with spatial variation of the order of the spin precession length λex. The effect of diffusion reflects in four additional torques that are third order in spatial derivatives of magnetization and bilinear in λex and in the nonadiabatic parameter β′. In order to study the dynamics of the solitons when these diffusive torques are present, we derive the Thiele equation in the limit of steady motion and we compare the results with the nondiffusive limit. When considering a homogenous current these torques increase the longitudinal velocity of transverse domain walls of width Δ by a factor (λex/Δ)2(α/3), α being the magnetic damping constant. In the case of single skyrmions with core radius r0 these new contributions tend to increase the Magnus effect in an amount proportional to (λex/r0)2(1+2αβ′).
Directory of Open Access Journals (Sweden)
Mengwei Zhang
2015-06-01
Full Text Available The state diagram of spin-torque oscillator (STO with perpendicular reference layer (REF and planar field generation layer (FGL was studied by a macrospin model and a micro-magnetic model. The state diagrams are calculated versus the current density, external field and external field angle. It was found that the oscillation in FGL could be controlled by current density combined with external field so as to achieve a wide frequency range. An optimized current and applied field region was given for microwave assisted magnetic recording (MAMR, considering both frequency and output field oscillation amplitude. The results of the macro-spin model were compared with those of the micro-magnetic model. The macro-spin model was qualitatively different from micro-magnetics and experimental results when the current density was large and the FGL was non-uniform.
Magnetic vortex excitation as spin torque oscillator and its unusual trajectories
Natarajan, Kanimozhi; Muthuraj, Ponsudana; Rajamani, Amuda; Arumugam, Brinda
2018-05-01
We report an interesting observation of unusual trajectories of vortex core oscillations in a spin valve pillar. Micromagnetic simulation in the composite free layer spin valve nano-pillar shows magnetic vortex excitation under critical current density. When current density is slightly increased and wave vector is properly tuned, for the first time we observe a star like and square gyration. Surprisingly this star like and square gyration also leads to steady, coherent and sustained oscillations. Moreover, the frequency of gyration is also very high for this unusual trajectories. The power spectral analysis reveals that there is a marked increase in output power and frequency with less distortions. Our investigation explores the possibility of these unusual trajectories to exhibit spin torque oscillations.
International Nuclear Information System (INIS)
Huskey, D.R.
1991-01-01
The arrival of Generic Letter 89-10 came as no surprise to many in the industry. The surprise was the apparent focus of the letter in light of the past history and experiences of the industry. Indeed, even the Attachment 1 list of '33' deficiencies reflects the true picture more accurately than the letter itself. From reviewing the 'GL-33', one can see that the vast majority of problems are maintenance or training related, or some combination of both. Hence, the bulk of solutions to these problems should also be focused on maintenance and training of maintenance and operations personnel. The one or two problems associated with 'stem thrust' or torque, however, are what the apparent bulk of the efforts to respond to the generic letter will ultimately entail. The reasons for this focus by the NRC seems to stem from some limited blow-down tests, which are still under review and are not necessarily representative of the majority of valves in the industry; coupled with repeated claims by certain diagnostic vendors as to the extent of the stem thrust problem based on their test results at the time. Hindsight now reflects that the problems were largely in methodology and interpretations errors of the data as opposed to real problems with the motor operated valves (MOVs) themselves. As a result however, the letter was issued, and many utilities have been put in a rather awkward position at the timing. First generation stem thrust measuring technology has proven to be full of pitfalls and methodology problems and is expensive on top of it all. State-of-the-art equipment is still undergoing growing pains. The purpose of this paper is to describe briefly a technique in use at a number of stations to set and maintain torque switch set points, i.e. use of a torque wrench combined with an ohmmeter to determine torque switch trip point. At least one station is utilizing the method to trend the spring pack relaxation phenomenon which Limitorque has been investigating
Energy Technology Data Exchange (ETDEWEB)
Evelt, M.; Demidov, V. E., E-mail: demidov@uni-muenster.de [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, 48149 Muenster (Germany); Bessonov, V. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg 620041 (Russian Federation); Demokritov, S. O. [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, 48149 Muenster (Germany); M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg 620041 (Russian Federation); Prieto, J. L. [Instituto de Sistemas Optoelectrónicos y Microtecnologa (UPM), Ciudad Universitaria, Madrid 28040 (Spain); Muñoz, M. [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), PTM, E-28760 Tres Cantos, Madrid (Spain); Ben Youssef, J. [Laboratoire de Magnétisme de Bretagne CNRS, Université de Bretagne Occidentale, 29285 Brest (France); Naletov, V. V. [Service de Physique de l' État Condensé, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette (France); Institute of Physics, Kazan Federal University, Kazan 420008 (Russian Federation); Loubens, G. de [Service de Physique de l' État Condensé, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette (France); Klein, O. [INAC-SPINTEC, CEA/CNRS and Univ. Grenoble Alpes, 38000 Grenoble (France); Collet, M.; Garcia-Hernandez, K.; Bortolotti, P.; Cros, V.; Anane, A. [Unité Mixte de Physique CNRS, Thales, Univ. Paris Sud, Université Paris-Saclay, 91767 Palaiseau (France)
2016-04-25
We study experimentally with submicrometer spatial resolution the propagation of spin waves in microscopic waveguides based on the nanometer-thick yttrium iron garnet and Pt layers. We demonstrate that by using the spin-orbit torque, the propagation length of the spin waves in such systems can be increased by nearly a factor of 10, which corresponds to the increase in the spin-wave intensity at the output of a 10 μm long transmission line by three orders of magnitude. We also show that, in the regime, where the magnetic damping is completely compensated by the spin-orbit torque, the spin-wave amplification is suppressed by the nonlinear scattering of the coherent spin waves from current-induced excitations.
International Nuclear Information System (INIS)
Evelt, M.; Demidov, V. E.; Bessonov, V.; Demokritov, S. O.; Prieto, J. L.; Muñoz, M.; Ben Youssef, J.; Naletov, V. V.; Loubens, G. de; Klein, O.; Collet, M.; Garcia-Hernandez, K.; Bortolotti, P.; Cros, V.; Anane, A.
2016-01-01
We study experimentally with submicrometer spatial resolution the propagation of spin waves in microscopic waveguides based on the nanometer-thick yttrium iron garnet and Pt layers. We demonstrate that by using the spin-orbit torque, the propagation length of the spin waves in such systems can be increased by nearly a factor of 10, which corresponds to the increase in the spin-wave intensity at the output of a 10 μm long transmission line by three orders of magnitude. We also show that, in the regime, where the magnetic damping is completely compensated by the spin-orbit torque, the spin-wave amplification is suppressed by the nonlinear scattering of the coherent spin waves from current-induced excitations.
Giant spin torque in hybrids with anisotropic p-d exchange interaction
International Nuclear Information System (INIS)
Korenev, V. L.
2014-01-01
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 10 4 A/cm 2 in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics
Giant spin torque in hybrids with anisotropic p-d exchange interaction
Energy Technology Data Exchange (ETDEWEB)
Korenev, V. L., E-mail: korenev@orient.ioffe.ru [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universitat Dortmund, D-44227 Dortmund (Germany)
2014-03-03
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 10{sup 4} A/cm{sup 2} in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics.
International Nuclear Information System (INIS)
Daqiq, Reza; Ghobadi, Nader
2016-01-01
We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.
Energy Technology Data Exchange (ETDEWEB)
Daqiq, Reza; Ghobadi, Nader
2016-07-15
We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.
Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect
Energy Technology Data Exchange (ETDEWEB)
Siracusano, G., E-mail: giuliosiracusano@gmail.com; Puliafito, V.; Giordano, A.; Azzerboni, B.; Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy); Tomasello, R. [Department of Computer Science, Modelling, Electronics and System Science, University of Calabria, Via P. Bucci, I-87036 Rende (CS) (Italy); La Corte, A. [Department of Informatic Engineering and Telecommunications, University of Catania, Viale Andrea Doria 6, 95125 Catania (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy)
2015-05-07
This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.
Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect
International Nuclear Information System (INIS)
Siracusano, G.; Puliafito, V.; Giordano, A.; Azzerboni, B.; Finocchio, G.; Tomasello, R.; La Corte, A.; Carpentieri, M.
2015-01-01
This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications
International Nuclear Information System (INIS)
Rossi, C.E.
1992-01-01
Problems with the helical springs were discovered during a series of dynamic tests that were conducted with a motor-operated wedge-gate valve from the decommissioned Shippingport Atomic Power Station (Shippingport). The valve was installed in a portion of the piping system that had been modified to simulate the stiffness of a typical US piping system. The valve was 30 years old and had its original Limitorque SMA-type motor operator. One of the main objectives of these tests was to determine the operating capability of the valve when subjected to simultaneous internal hydraulic and seismic loadings. This was typically accomplished by operating the valve to achieve maximum hydraulic loading during maximum seismic loading. During testing, an operability problem with the valve motor operator occurred. The design of the SMA-type motor operator is such that the torque switch helical spring is in its most compressed condition when the valve is closed. Thus, a normally closed valve is more likely to experience permanent deformation of the helical torque spring. A review of the Shippingport records indicated that both of these valves had been used as normally closed valves at Shippingport. Thus, normally closed, safety-related valves with Limitorque SMA-type motor operators may not accomplish their intended safety-related function because the original torque switch setting may result in lower output torque caused by the permanent deformation of their torque switch helical springs
Fast switching of bistable magnetic nanowires through collective spin reversal
Vindigni, Alessandro; Rettori, Angelo; Bogani, Lapo; Caneschi, Andrea; Gatteschi, Dante; Sessoli, Roberta; Novak, Miguel A.
2005-08-01
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.
Wireless current sensing by near field induction from a spin transfer torque nano-oscillator
Energy Technology Data Exchange (ETDEWEB)
Ramaswamy, B. [Fischell Department of Bioengineering, University of Maryland, College Park, Maryland 20742 (United States); Algarin, J. M.; Waks, E., E-mail: edowaks@umd.edu [Institute for Research in Electronics and Applied Physics (IREAP), University of Maryland, College Park, Maryland 20742 (United States); Weinberg, I. N. [Weinberg Medical Physics LLC, Bethesda, Maryland 20817 (United States); Chen, Y.-J.; Krivorotov, I. N. [Department of Physics and Astronomy, University of California, Irvine, California 92697 (United States); Katine, J. A. [HGST Research Center, San Jose, California 95135 (United States); Shapiro, B. [Fischell Department of Bioengineering, University of Maryland, College Park, Maryland 20742 (United States); Institute for Systems Research (ISR), University of Maryland, College Park, Maryland 20742 (United States)
2016-06-13
We demonstrate that spin transfer torque nano-oscillators (STNO) can act as wireless sensors for local current. The STNO acts as a transducer that converts weak direct currents into microwave field oscillations that we detect using an inductive coil. We detect direct currents in the range of 300–700 μA and report them wirelessly to a receiving induction coil at distances exceeding 6.5 mm. This current sensor could find application in chemical and biological sensing and industrial inspection.
Nakamura, Y.; Nishikawa, M.; Osawa, H.; Okamoto, Y.; Kanao, T.; Sato, R.
2018-05-01
In this article, we propose the detection method of the recorded data pattern by the envelope of the temporal magnetization dynamics of resonantly interacting spin-torque oscillator on the microwave assisted magnetic recording for three-dimensional magnetic recording. We simulate the envelope of the waveform from recorded dots with the staggered magnetization configuration, which are calculated by using a micromagnetic simulation. We study the data detection methods for the envelope and propose a soft-output Viterbi algorithm (SOVA) for partial response (PR) system as a signal processing system for three dimensional magnetic recording.
Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories
Energy Technology Data Exchange (ETDEWEB)
Heinonen, O.
2014-10-05
Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.
Tilted spin torque-driven ferromagnetic resonance in a perpendicular-analyzer magnetic trilayer
International Nuclear Information System (INIS)
Wang Rixing; He Pengbin; Liu Quanhui; Li Zaidong; Pan Anlian; Zou Bingsuo; Wang Yanguo
2010-01-01
A theoretical study is presented on the current-driven ferromagnetic resonance in the magnetic trilayers. On the basis of the Landau-Lifshitz-Gilbert-Slonczewski equation, we derive the output dc voltage for arbitrary anisotropy in the free and pinned layers by the linearization method. As an example, the resonance spectra of the tilted-polarizer and perpendicular-analyzer trilayer show that the equilibrium position, the resonant linewidth and the resonant location can be tuned by changing the magnitude and the direction of spin torque. The effective damping can be minimized through adjusting the current and the pinned-layer magnetization direction.
Ghosh, Sumit; Manchon, Aurelien
2017-01-01
Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.
Ghosh, Sumit; Manchon, Aurelien
2018-01-01
Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.
Ghosh, Sumit
2017-11-29
Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.
Ghosh, Sumit
2018-04-02
Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.
Electrical switching of antiferromagnets via strongly spin-orbit coupled materials
Li, Xi-Lai; Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook
2017-01-01
Electrically controlled ultra-fast switching of an antiferromagnet (AFM) is shown to be realizable by interfacing it with a material of strong spin-orbit coupling. The proximity interaction between the sublattice magnetic moments of a layered AFM and the spin-polarized free electrons at the interface offers an efficient way to manipulate antiferromagnetic states. A quantitative analysis, using the combination with a topological insulator as an example, demonstrates highly reliable 90° and 180° rotations of AFM magnetic states under two different mechanisms of effective torque generation at the interface. The estimated switching speed and energy requirement are in the ps and aJ ranges, respectively, which are about two-three orders of magnitude better than the ferromagnetic counterparts. The observed differences in the magnetization dynamics may explain the disparate characteristic responses. Unlike the usual precessional/chiral motions in the ferromagnets, those of the AFMs can essentially be described as a damped oscillator with a more direct path. The impact of random thermal fluctuations is also examined.
Shi, Shuyuan; Wang, Aizhu; Wang, Yi; Ramaswamy, Rajagopalan; Shen, Lei; Moon, Jisoo; Zhu, Dapeng; Yu, Jiawei; Oh, Seongshik; Feng, Yuanping; Yang, Hyunsoo
2018-01-01
We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) B i2S e3 and Ag bilayer by the spin-torque ferromagnetic resonance technique. The spin-orbit-torque ratio in the B i2S e3/Ag /CoFeB heterostructure shows a significant enhancement as the Ag thickness increases to ˜2 nm and reaches a value of 0.5 for 5 nm Ag, which is ˜3 times higher than that of B i2S e3/CoFeB at room temperature. The observation reveals the interfacial effect of B i2S e3/Ag exceeds that of the topological surface states (TSSs) in the B i2S e3 layer and plays a dominant role in the charge-to-spin conversion in the B i2S e3/Ag /CoFeB system. Based on first-principles calculations, we attribute our observation to the large Rashba splitting bands which wrap the TSS band and have the same net spin polarization direction as the TSS of B i2S e3 . Subsequently, we demonstrate Rashba-induced magnetization switching in B i2S e3/Ag /Py with a low current density of 5.8 ×105A /c m2 .
A critical comparison of electrical methods for measuring spin-orbit torques
Zhang, Xuanzi; Hung, Yu-Ming; Rehm, Laura; Kent, Andrew D.
Direct (DC) and alternating current (AC) transport measurements of spin-orbit torques (SOTs) in heavy metal-ferromagnet heterostructure with perpendicular magnetic anisotropy have been proposed and demonstrated. A DC method measures the change of perpendicular magnetization component while an AC method probes the first and second harmonic magnetization oscillation in responses to an AC current (~1 kHz). Here we conduct both types of measurements on β-Ta/CoFeB/MgO in the form of patterned Hall bars (20 μm linewidth) and compare the results. Experiments results are qualitatively in agreement with a macro spin model including Slonzewski-like and a field-like SOTs. However, the effective field from the ac method is larger than that obtained from the DC method. We discuss the possible origins of the discrepancy and its implications for quantitatively determining SOTs. Research supported by the SRC-INDEX program, NSF-DMR-1309202 and NYU-DURF award.
Electric-field assisted spin torque nano-oscillator and binary frequency shift keying modulation
Zhang, Xiangli; Chen, Hao-Hsuan; Zhang, Zongzhi; Liu, Yaowen
2018-04-01
Electric-controlled magnetization precession introduces technologically relevant possibility for developing spin torque nano-oscillators (STNO) with potential applications in microwave emission. Using the perpendicularly magnetized magnetic tunnel junction (MTJ), we show that the magnetization oscillation frequency can be tuned by the co-action of electric field and spin polarized current. The dynamical phase diagram of MTJ-based STNO is analytically predicted through coordinate transformation from the laboratory frame to the rotation frame, by which the nonstationary out-of-plane magnetization precession process is therefore transformed into the stationary process in the rotation frame. Furthermore, using this STNO as a microwave source, we numerically demonstrate that the bit signal can be transmitted by a binary frequency shift keying (BFSK) modulation technique. The BFSK scheme shows good modulation features with no transient state.
The magnetization dynamics of nano-contact spin-torque vortex oscillators
Keatley, Paul
The operation of nano-contact (NC) spin-torque vortex oscillators (STVOs) is underpinned by vortex gyration in response to spin-torque delivered by high density current passing through the magnetic layers of a spin valve. Gyration directly beneath the NC yields radio frequency (RF) emission through the giant magnetoresistance (GMR) effect, which can be readily detected electronically. The magnetization dynamics that extend beyond the NC perimeter contribute little to the GMR signal, but are crucial for synchronization of multiple NC-STVOs that share the same spin valve film. In this work time-resolved scanning Kerr microscopy (TRSKM) was used to directly image the extended dynamics of STVOs phase-locked to an injected RF current. In this talk the dynamics of single 250-nm diameter NCs, and a pair of 100-nm diameter NCs, will be presented. In general the Kerr images reveal well-defined localized and far-field dynamics, driven by spin-torque and RF current Oersted fields respectively. The RF frequency, RF Oersted field, direction of an in-plane magnetic field, and equilibrium magnetic state, all influenced the spatial character of the dynamics observed in single NCs. In the pair of NCs, two modes were observed in the RF emission. Kerr images revealed that a vortex was formed beneath each NC and that the mode with enhanced spectral amplitude and line quality appeared to be correlated with two localized regions oscillating with similar amplitude and phase, while a second weaker mode exhibited amplitude and phase differences. This suggests that the RF emission was generated by collective modes of vortex gyration dynamically coupled via magnetization dynamics and dipolar interactions of the shared magnetic layers. Within the constraints of injection locking, this work demonstrates that TRSKM can provide valuable insight into the spatial character and time-evolution of magnetization dynamics generated by NC-STVOs and the conditions that may favor their synchronization
Spin-orbit torques for current parallel and perpendicular to a domain wall
Energy Technology Data Exchange (ETDEWEB)
Schulz, Tomek; Lee, Kyujoon; Karnad, Gurucharan V. [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, 55128 Mainz (Germany); Alejos, Oscar [Departamento de Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belen, 7, E-47011 Valladolid (Spain); Martinez, Eduardo; Moretti, Simone [Departamento Fisica Aplicada, Universidad de Salamanca, Plaza de los Caidos s/n, E-38008 Salamanca (Spain); Hals, Kjetil M. D. [Niels Bohr International Academy and the Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Garcia, Karin; Ravelosona, Dafiné [Institut d' Electronique Fondamentale, UMR CNRS 8622, Université Paris Sud, 91405 Orsay Cedex (France); Vila, Laurent [Institut Nanosciences et Cryogénie, Université Grenoble Alpes, F-38000 Grenoble (France); Institut Nanosciences et Cryogénie, CEA, F-38000 Grenoble (France); Lo Conte, Roberto; Kläui, Mathias [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, 55128 Mainz (Germany); Graduate School of Excellence “Materials Science in Mainz” (MAINZ), Staudinger Weg 9, 55128 Mainz (Germany); Ocker, Berthold [Singulus Technologies AG, 63796 Kahl am Main (Germany); Brataas, Arne [Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)
2015-09-21
We report field- and current-induced domain wall (DW) depinning experiments in Ta\\Co{sub 20}Fe{sub 60}B{sub 20}\\MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents perpendicular to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared with previously used measurements for just two field directions (parallel and perpendicular to the DW) to determine the real torque strength and shows the sensitivity of the SOT to the precise DW structure and pinning sites.
Spin-orbit torques for current parallel and perpendicular to a domain wall
International Nuclear Information System (INIS)
Schulz, Tomek; Lee, Kyujoon; Karnad, Gurucharan V.; Alejos, Oscar; Martinez, Eduardo; Moretti, Simone; Hals, Kjetil M. D.; Garcia, Karin; Ravelosona, Dafiné; Vila, Laurent; Lo Conte, Roberto; Kläui, Mathias; Ocker, Berthold; Brataas, Arne
2015-01-01
We report field- and current-induced domain wall (DW) depinning experiments in Ta\\Co 20 Fe 60 B 20 \\MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents perpendicular to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared with previously used measurements for just two field directions (parallel and perpendicular to the DW) to determine the real torque strength and shows the sensitivity of the SOT to the precise DW structure and pinning sites
Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons
Directory of Open Access Journals (Sweden)
G. A. Nemnes
2012-01-01
Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.
International Nuclear Information System (INIS)
Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui
2016-01-01
We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.
Energy Technology Data Exchange (ETDEWEB)
Zhou, Benliang [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China); Liu, Guang; Guo, Dan [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China)
2016-11-01
We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.
Taniguchi, Tomohiro; Tsunegi, Sumito; Kubota, Hitoshi
2018-01-01
A mutual synchronization of spin-torque oscillators coupled through current injection is studied theoretically. Models of electrical coupling in parallel and series circuits are proposed. Solving the Landau-Lifshitz-Gilbert equation, excitation of in-phase or antiphase synchronization, depending on the ways the oscillators are connected, is found. It is also found from both analytical and numerical calculations that the current-frequency relations for both parallel and series circuits are the same as that for a single spin-torque oscillator.
Episodic Spin-up and Spin-down Torque on Earth
Slabinski, Victor J.; Mendonca, Antonio A.
2018-04-01
Variations in Earth rotation angle are traditionally expressed by the time difference (ΔT=TT-UT1) between Terrestrial Time (TT) as told by atomic clocks and Universal Time UT1, the time variable used by the Earth-rotation formula. A plot of ΔT versus TT over the past 160 years shows a continuous curve with approximate straight-line segments with different spans of order ~20 years. Removing the tidal and seasonal variations from the data gives these line segments which represent the “decadal variations” in Earth rotation.The slope of a straight-line segment is proportional to the departure of Earth rotation rate from a reference value at the time. The change in slope over the relatively short time between segments indicates an episodic spin-up or spin-down in Earth rotation. The daily combination of VLBI, SLR, and other modern data available since 1973 gives us accurate, daily values of ΔT and the corresponding LOD (Length Of Day) values during these episodes. These allow us to determine the rotational acceleration occurring then.The three largest spin-speed changes found during the VLBI era have the following characteristics:Episode _____________ Duration__ ΔLOD__LOD Rate1983 Dec 30-1984 Jan 28 ... 29 d ...-0.65 ms ..-8.3 ms/y ..........spin-up1989 Mar 15-1989 May 23 ...69 d ....0.68 .......+3.6 ..............spin-down1994 Jan 21-2001 Apr 01 ... 6.5 y ...-2.2 .........-0.36 ..extended spin-upFor the first two episodes listed, we find the acceleration grows from zero (or at least a relatively small value) to its extreme value in ~1 day, stays approximately constant at this value for 29 or 69 days, and then decays back to zero over ~1 day. The acceleration, while it occurs, gives an LOD rate much greater than the 0.02 ms/y rate from tidal friction.The third episode shows that occasionally a several-year-long episode occurs. The acceleration magnitude is smaller but can make a larger total change in LOD (and spin rate). Tidal friction requires >100 y to equal
Negative optical spin torque wrench of a non-diffracting non-paraxial fractional Bessel vortex beam
Mitri, F. G.
2016-10-01
An absorptive Rayleigh dielectric sphere in a non-diffracting non-paraxial fractional Bessel vortex beam experiences a spin torque. The axial and transverse radiation spin torque components are evaluated in the dipole approximation using the radiative correction of the electric field. Particular emphasis is given on the polarization as well as changing the topological charge α and the half-cone angle of the beam. When α is zero, the axial spin torque component vanishes. However, when α becomes a real positive number, the vortex beam induces left-handed (negative) axial spin torque as the sphere shifts off-axially from the center of the beam. The results show that a non-diffracting non-paraxial fractional Bessel vortex beam is capable of inducing a spin reversal of an absorptive Rayleigh sphere placed arbitrarily in its path. Potential applications are yet to be explored in particle manipulation, rotation in optical tweezers, optical tractor beams, and the design of optically-engineered metamaterials to name a few areas.
Energy Technology Data Exchange (ETDEWEB)
Riegler, Andreas
2011-11-25
Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO)), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10{sup -3} range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron
Optical switching of nuclear spin–spin couplings in semiconductors
Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi
2011-01-01
Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear–spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings. PMID:21730962
Spin switches for compact implementation of neuron and synapse
International Nuclear Information System (INIS)
Quang Diep, Vinh; Sutton, Brian; Datta, Supriyo; Behin-Aein, Behtash
2014-01-01
Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network
Spin switches for compact implementation of neuron and synapse
Energy Technology Data Exchange (ETDEWEB)
Quang Diep, Vinh, E-mail: vdiep@purdue.edu; Sutton, Brian; Datta, Supriyo [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Behin-Aein, Behtash [GLOBALFOUNDRIES, Inc., Sunnyvale, California 94085 (United States)
2014-06-02
Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.
Evaluation Method for Fieldlike-Torque Efficiency by Modulation of the Resonance Field
Kim, Changsoo; Kim, Dongseuk; Chun, Byong Sun; Moon, Kyoung-Woong; Hwang, Chanyong
2018-05-01
The spin Hall effect has attracted a lot of interest in spintronics because it offers the possibility of a faster switching route with an electric current than with a spin-transfer-torque device. Recently, fieldlike spin-orbit torque has been shown to play an important role in the magnetization switching mechanism. However, there is no simple method for observing the fieldlike spin-orbit torque efficiency. We suggest a method for measuring fieldlike spin-orbit torque using a linear change in the resonance field in spectra of direct-current (dc)-tuned spin-torque ferromagnetic resonance. The fieldlike spin-orbit torque efficiency can be obtained in both a macrospin simulation and in experiments by simply subtracting the Oersted field from the shifted amount of resonance field. This method analyzes the effect of fieldlike torque using dc in a normal metal; therefore, only the dc resistivity and the dimensions of each layer are considered in estimating the fieldlike spin-torque efficiency. The evaluation of fieldlike-torque efficiency of a newly emerging material by modulation of the resonance field provides a shortcut in the development of an alternative magnetization switching device.
International Nuclear Information System (INIS)
Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.
2014-01-01
Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed
Using a spin torque nano-oscillator to read memory based on the magnetic permeability
International Nuclear Information System (INIS)
Petrie, J R; Wieland, K A; Fischer, G A; Edelstein, A S; Urazhdin, S
2014-01-01
We present an archival memory utilizing a spin torque nano-oscillator (STNO) to read bits of data with different magnetic permeability. Basing a magnetic memory on this intrinsic property rather than remanent magnetization reduces the risk of data corruption. The permeability of the bits is read as changes in an applied probe field near the media. These changes in the probe field are measured by detecting microwave frequency shifts in STNOs. The probe field can be tuned over hundreds of Oe to optimize the reading of the media. Using a 400 Oe probe field, we have measured 2% frequency shifts in a STNO near micrometre-sized bits of (1) lithographically-patterned permalloy lines and (2) laser-crystallized Metglas lines. Data from either media was not corrupted by exposure to fields of 6400 Oe and temperatures of 523 K. (paper)
High-data-transfer-rate read heads composed of spin-torque oscillators
International Nuclear Information System (INIS)
Mizushima, K; Kudo, K; Nagasawa, T; Sato, R
2011-01-01
The signal-to-noise ratios (SNRs) of the high-data-transfer-rate read heads beyond 3 Gbits/s composed of spin-torque oscillators (STOs) are calculated under the thermal magnetization fluctuations by using the recent nonlinear theories. The STO head senses the media field as a modulation in the oscillation frequency, enabling high signal transfer rates beyond the limit of ferromagnetic relaxation. The output (digital) signal is obtained by FM (frequency modulation) detection, which is commonly used in communication technologies. As the problem of rapid phase diffusion in STOs caused by the thermal fluctuations is overcome by employing a delay detection method, the sufficiently large SNRs are obtained even in nonlinear STOs less than 30 x 30 nm 2 in size.
Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang
2015-01-01
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336
Using a spin torque nano-oscillator to read memory based on the magnetic permeability
Petrie, J. R.; Urazhdin, S.; Wieland, K. A.; Fischer, G. A.; Edelstein, A. S.
2014-02-01
We present an archival memory utilizing a spin torque nano-oscillator (STNO) to read bits of data with different magnetic permeability. Basing a magnetic memory on this intrinsic property rather than remanent magnetization reduces the risk of data corruption. The permeability of the bits is read as changes in an applied probe field near the media. These changes in the probe field are measured by detecting microwave frequency shifts in STNOs. The probe field can be tuned over hundreds of Oe to optimize the reading of the media. Using a 400 Oe probe field, we have measured 2% frequency shifts in a STNO near micrometre-sized bits of (1) lithographically-patterned permalloy lines and (2) laser-crystallized Metglas lines. Data from either media was not corrupted by exposure to fields of 6400 Oe and temperatures of 523 K.
International Nuclear Information System (INIS)
Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.
2014-01-01
The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.
International Nuclear Information System (INIS)
Loong, Li Ming; Deorani, Praveen; Qiu, Xuepeng; Yang, Hyunsoo
2015-01-01
Current-induced spin-orbit torques (SOTs) have the potential to revolutionize magnetization switching technology. Here, we investigate SOT in a heavy metal (HM)/Co 2 FeAl 0.5 Si 0.5 (CFAS)/MgO thin film structure with perpendicular magnetic anisotropy (PMA), where the HM is either Pt or Ta. Our results suggest that both the spin Hall effect and the Rashba effect contribute significantly to the effective fields in the Pt underlayer samples. Moreover, after taking the PMA energies into account, current-induced SOT-based switching studies of both the Pt and Ta underlayer samples suggest that the two HM underlayers yield comparable switching efficiency in the HM/CFAS/MgO material system
Energy Technology Data Exchange (ETDEWEB)
Loong, Li Ming; Deorani, Praveen; Qiu, Xuepeng; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)
2015-07-13
Current-induced spin-orbit torques (SOTs) have the potential to revolutionize magnetization switching technology. Here, we investigate SOT in a heavy metal (HM)/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS)/MgO thin film structure with perpendicular magnetic anisotropy (PMA), where the HM is either Pt or Ta. Our results suggest that both the spin Hall effect and the Rashba effect contribute significantly to the effective fields in the Pt underlayer samples. Moreover, after taking the PMA energies into account, current-induced SOT-based switching studies of both the Pt and Ta underlayer samples suggest that the two HM underlayers yield comparable switching efficiency in the HM/CFAS/MgO material system.
Role of motive forces for the spin torque transfer for nano-structures
Barnes, Stewart
2009-03-01
Despite an announced imminent commercial realization of spin transfer random access memory (SPRAM) the current theory evolved from that of Slonczewski [1,2] does not conserve energy. Barnes and Maekawa [3] have shown, in order correct this defect, forces which originate from the spin rather than the charge of an electron must be accounted for, this leading to the concept of spin-motive-forces (smf) which must appear in Faraday's law and which significantly modifies the theory for spin-valves and domain wall devices [4]. A multi-channel theory in which these smf's redirect the spin currents will be described. In nano-structures it is now well known that the Kondo effect is reflected by conductance peaks. In essence, the spin degrees of freedom are used to enhance conduction. In a system with nano-magnets and a Coulomb blockade [5] the similar spin channels can be the only means of effective conduction. This results in a smf which lasts for minutes and an enormous magneto-resistance [5]. This implies the possibility of ``single electron memory'' in which the magnetic state is switched by a single electron. [4pt] [1] J. C. Slonczewski, Current-Driven Excitation of Magnetic Multilayers J. Magn. Magn. Mater. 159, L1 (1996). [0pt] [2] Y. Tserkovnyak, A. Brataas, G. E. W. Bauer, and B. I. Halperin, Nonlocal magnetization dynamics in ferromagnetic heterostructures, Rev. Mod. Phys. 77, 1375 (2005). [0pt] [3] S. E. Barnes and S. Maekawa, Generalization of Faraday's Law to Include Nonconservative Spin Forces Phys. Rev. Lett. 98, 246601 (2007); S. E. Barnes and S. Maekawa, Currents induced by domain wall motion in thin ferromagnetic wires. arXiv:cond-mat/ 0410021v1 (2004). [0pt] [4] S. E., Barnes, Spin motive forces, measurement, and spin-valves. J. Magn. Magn. Mat. 310, 2035-2037 (2007); S. E. Barnes, J. Ieda. J and S. Maekawa, Magnetic memory and current amplification devices using moving domain walls. Appl. Phys. Lett. 89, 122507 (2006). [0pt] [5] Pham-Nam Hai, Byung-Ho Yu
SPICE modelling of magnetic tunnel junctions written by spin-transfer torque
Energy Technology Data Exchange (ETDEWEB)
Guo, W; Prenat, G; De Mestier, N; Baraduc, C; Dieny, B [SPINTEC, UMR(8191), INAC, CEA/CNRS/UJF, 17 Av. des Martyrs, 38054 Grenoble Cedex 9 (France); Javerliac, V; El Baraji, M, E-mail: guillaume.prenat@cea.f [CROCUS Technology, 5 Place Robert Schuman, 38025 Grenoble (France)
2010-06-02
Spintronics aims at extending the possibility of conventional electronics by using not only the charge of the electron but also its spin. The resulting spintronic devices, combining the front-end complementary metal oxide semiconductor technology of electronics with a magnetic back-end technology, employ magnetic tunnel junctions (MTJs) as core elements. With the intent of simulating a circuit without fabricating it first, a reliable MTJ electrical model which is applicable to the standard SPICE (Simulation Program with Integrated Circuit Emphasis) simulator is required. Since such a model was lacking so far, we present a MTJ SPICE model whose magnetic state is written by using the spin-transfer torque effect. This model has been developed in the C language and validated on the Cadence Virtuoso Platform with a Spectre simulator. Its operation is similar to that of the standard BSIM (Berkeley Short-channel IGFET Model) SPICE model of the MOS transistor and fully compatible with the SPICE electrical simulator. The simulation results obtained using this model have been found in good accord with those theoretical macrospin calculations and results.
Magnetic droplets in nano-contact spin-torque oscillators with perpendicular magnetic anisotropy
Åkerman, Johan
2013-03-01
The theoretical prediction, by Ivanov and Kosevich, of ``magnon drop'' solitons in thin films with perpendicular magnetic anisotropy (PMA) and zero damping, dates back to the 1970s. More recently, Hoefer, Silva and Keller, demonstrated analytically and numerically that related ``magnetic droplet'' solitons should be possible to excite in nano-contact spin-torque oscillators (NC-STOs) based on PMA materials, where spin transfer torque locally realizes the zero-damping condition required in. In my talk, I will present the first experimental demonstration of such magnetic droplets, realized using 50-100 nm diameter nano-contacts (NCs) fabricated on top of orthogonal GMR stacks of Co8/Cu/Co0.3[Ni0.8/Co0.4]x4 (thicknesses in nm). The nucleation of a magnetic droplet manifests itself as a dramatic 10 GHz drop in microwave signal frequency at a drive-current dependent critical perpendicular field of the order of 0.5 - 1 T. The drop in frequency is accompanied by a simultaneous sharp resistance increase of the device and a sign change of its magnetoresistance, directly indicating the existence of a reversed magnetization in a region of the [Co/Ni] free layer underneath the NC. As predicted by numerical simulations the droplet exhibits rich magnetodynamic properties, experimentally observed as auto-modulation at approximately 1 GHz and sometimes sidebands at 1/2 and 3/2 of the fundamental droplet frequency. The 1 GHz modulation can be shown numerically to be related to the drift instability of the droplet, albeit with enough restoring force to make the droplet perform a periodic motion instead of leaving the NC region. The sidebands at 1/2 and 3/2 the droplet frequency are related to eigenmodes of the droplet perimeter. Magnetic droplet nucleation is found to be robust and reproducible over a wide number of NC-STOs with different NC sizes, making this new nanomagnetic object as fundamental and potentially useful to nanomagnetism as e.g. domain walls and vortices. Support
Energy Technology Data Exchange (ETDEWEB)
Heinen, Jan; Boulle, Olivier; Rousseau, Kevin; Malinowski, Gregory; Klaeui, Mathias [Universitaet Konstanz, Fachbereich Physik, D-78457 Konstanz (Germany); Swagton, Henk J.; Koopmans, Bert [Eindhoven University of Technology, Department of Applied Physics, MB 5600 (Netherlands); Ulysse, Christian; Faini, Giancarlo [CNRS, Phynano team, Laboratoire de Photonique et de Nanostructures, 91460 Marcoussis (France)
2010-07-01
We report on magnetotransport studies on perpendicularly magnetized nanowires with narrow domain wall (DW) structures. Using Co/Pt multilayer nanowires, we have previously shown that Joule heating is concealing most of the current induced domain wall effects, but using a constant sample temperature a large non-adiabacity factor {beta} has been deduced. Here, we carry out experiments for both applied field directions and current polarities, starting from different DW configurations within a Hall cross. We clearly show, using the different symmetries of spin torque and Oersted-field, that the much debated Oersted-field does not contribute to the DW depinning significantly. This allows us to extract the spin torque contribution and the non-adiabacity factor {beta}, which turns out to be in line with previous measurements.
Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field
Eklund, Anders; Bonetti, Stefano; Sani, Sohrab R.; Majid Mohseni, S.; Persson, Johan; Chung, Sunjae; Amir Hossein Banuazizi, S.; Iacocca, Ezio; Östling, Mikael; Åkerman, Johan; Gunnar Malm, B.
2014-03-01
The nano-scale spin torque oscillator (STO) is a compelling device for on-chip, highly tunable microwave frequency signal generation. Currently, one of the most important challenges for the STO is to increase its longer-time frequency stability by decreasing the 1/f frequency noise, but its high level makes even its measurement impossible using the phase noise mode of spectrum analyzers. Here, we present a custom made time-domain measurement system with 150 MHz measurement bandwidth making possible the investigation of the variation of the 1/f as well as the white frequency noise in a STO over a large set of operating points covering 18-25 GHz. The 1/f level is found to be highly dependent on the oscillation amplitude-frequency non-linearity and the vicinity of unexcited oscillation modes. These findings elucidate the need for a quantitative theoretical treatment of the low-frequency, colored frequency noise in STOs. Based on the results, we suggest that the 1/f frequency noise possibly can be decreased by improving the microstructural quality of the metallic thin films.
Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field
International Nuclear Information System (INIS)
Eklund, Anders; Sani, Sohrab R.; Chung, Sunjae; Amir Hossein Banuazizi, S.; Östling, Mikael; Gunnar Malm, B.; Bonetti, Stefano; Majid Mohseni, S.; Persson, Johan; Iacocca, Ezio; Åkerman, Johan
2014-01-01
The nano-scale spin torque oscillator (STO) is a compelling device for on-chip, highly tunable microwave frequency signal generation. Currently, one of the most important challenges for the STO is to increase its longer-time frequency stability by decreasing the 1/f frequency noise, but its high level makes even its measurement impossible using the phase noise mode of spectrum analyzers. Here, we present a custom made time-domain measurement system with 150 MHz measurement bandwidth making possible the investigation of the variation of the 1/f as well as the white frequency noise in a STO over a large set of operating points covering 18–25 GHz. The 1/f level is found to be highly dependent on the oscillation amplitude-frequency non-linearity and the vicinity of unexcited oscillation modes. These findings elucidate the need for a quantitative theoretical treatment of the low-frequency, colored frequency noise in STOs. Based on the results, we suggest that the 1/f frequency noise possibly can be decreased by improving the microstructural quality of the metallic thin films
Synchronization of vortex-based spin torque nano-oscillators by magnetostatic coupling
Energy Technology Data Exchange (ETDEWEB)
Zaspel, C.E., E-mail: craig.zaspel@umwestern.edu
2015-12-15
Synchronization of two nanopillar oscillators driven by spin torque and coupled through the magnetic dipolar interaction. The dominant mode in each oscillator is gyrotropic motion of the vortex core in an elliptical orbit about the free layer disk center. The dynamic properties of this mode is investigated by solution the coupled Thiele equations with both nanopillar oscillators having identical dimensions, but with a current mismatch. It is noticed that there is a range in the current difference where the oscillators will be synchronized where the vortex gyrotropic motion will be frequency-locked with the radii of gyrotropic motion equal for both disks. There is, however, a phase shift between the gyrotropic motion with the smaller current disk lagging the higher current disk by a few degrees. - Highlights: • Vortex-based nanopillar oscillators re synchronized by the dipolar interaction. • There is a range of frequencies where both oscillators will frequency-locked. • There are upper and lower critical currents defining a locking range.
Vortex spin-torque oscillator stabilized by phase locked loop using integrated circuits
Directory of Open Access Journals (Sweden)
Martin Kreissig
2017-05-01
Full Text Available Spin-torque nano-oscillators (STO are candidates for the next technological implementation of spintronic devices in commercial electronic systems. For use in microwave applications, improving the noise figures by efficient control of their phase dynamics is a mandatory requirement. In order to achieve this, we developed a compact phase locked loop (PLL based on custom integrated circuits (ICs and demonstrate that it represents an efficient way to reduce the phase noise level of a vortex based STO. The advantage of our approach to phase stabilize STOs is that our compact system is highly reconfigurable e.g. in terms of the frequency divider ratio N, RF gain and loop gain. This makes it robust against device to device variations and at the same time compatible with a large range of STOs. Moreover, by taking advantage of the natural highly non-isochronous nature of the STO, the STO frequency can be easily controlled by e.g. changing the divider ratio N.
Spin-torque diode with tunable sensitivity and bandwidth by out-of-plane magnetic field
Energy Technology Data Exchange (ETDEWEB)
Li, X.; Zheng, C.; Pong, Philip W. T. [Department of Electrical and Electronic Engineering, The University of Hong Kong (Hong Kong); Zhou, Y., E-mail: yanzhou@hku.hk [School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China); Department of Physics, The University of Hong Kong (Hong Kong); Kubota, H.; Yuasa, S. [Spintronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)
2016-06-06
Spin-torque diodes based on nanosized magnetic tunnel junctions are novel microwave detectors with high sensitivity and wide frequency bandwidth. While previous reports mainly focus on improving the sensitivity, the approaches to extend the bandwidth are limited. This work experimentally demonstrates that through optimizing the orientation of the external magnetic field, wide bandwidth can be achieved while maintaining high sensitivity. The mechanism of the frequency- and sensitivity-tuning is investigated through analyzing the dependence of resonant frequency and DC voltage on the magnitude and the tilt angle of hard-plane magnetic field. The frequency dependence is qualitatively explicated by Kittel's ferromagnetic resonance model. The asymmetric resonant frequency at positive and negative magnetic field is verified by the numerical simulation considering the in-plane anisotropy. The DC voltage dependence is interpreted through evaluating the misalignment angle between the magnetization of the free layer and the reference layer. The tunability of the detector performance by the magnetic field angle is evaluated through characterizing the sensitivity and bandwidth under 3D magnetic field. The frequency bandwidth up to 9.8 GHz or maximum sensitivity up to 154 mV/mW (after impedance mismatch correction) can be achieved by tuning the angle of the applied magnetic field. The results show that the bandwidth and sensitivity can be controlled and adjusted through optimizing the orientation of the magnetic field for various applications and requirements.
Energy Technology Data Exchange (ETDEWEB)
Lavanant, M. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Department of Physics, New York University, New York, NY 10003 (United States); Petit-Watelot, S. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Kent, A.D. [Department of Physics, New York University, New York, NY 10003 (United States); Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France)
2017-04-15
The state diagram of a magnetic tunnel junction with perpendicularly magnetized electrodes in the presence of spin-transfer torques is computed in a macrospin approximation using a power dissipation model. Starting from the macrospin's energy we determine the stability of energy extremum in terms of power received and dissipated, allowing the consideration of non-conservative torques associated with spin transfer and damping. The results are shown to be in agreement with those obtained by direct integration of the Landau-Lifshitz-Gilbert-Slonczewski equation. However, the power dissipation model approach is faster and shows the reason certain magnetic states are stable, such as states that are energy maxima but are stabilized by spin transfer torque. Breaking the axial system, such as by a tilted applied field or tilted anisotropy, is shown to dramatically affect the state diagrams. Finally, the influence of a higher order uniaxial anisotropy that can stabilize a canted magnetization state is considered and the results are compared to experimental data. - Highlights: • Methods to compute state Diagram (Voltage Versus Field) for perpendicular Magnetic Tunnel Junctions. • Comparison between the conventional LLG model and a model based on Power dissipation to study magnetization reversal in magnetic tunnel junction.
Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires
Franchin, Matteo; Knittel, Andreas; Albert, Maximilian; Chernyshenko, Dmitri S.; Fischbacher, Thomas; Prabhakar, Anil; Fangohr, Hans
2011-09-01
, the spin torque transfer term is acting exactly against the damping in the micromagnetic system, and thus the low current density is sufficient to accumulate enough energy quickly. These key insights may be crucial in furthering the development of novel memory technologies, such as the racetrack memory, that can be controlled through low current densities.
Directory of Open Access Journals (Sweden)
Xiangdong Liu
2016-05-01
Full Text Available A novel modular arc-linear flux-switching permanent-magnet motor (MAL-FSPM used for scanning system instead of reduction gearboxes and kinematic mechanisms is proposed and researched in this paper by the finite element method (FEM. The MAL-FSPM combines characteristics of flux-switching permanent-magnet motor and linear motor and can realize the direct driving and limited angular movement. Structure and operation principle of the MAL-FSPM are analyzed. Cogging torque model of the MAL-FSPM is established. The characteristics of cogging torque and torque ripple are investigated for: (1 distance (dend between left end of rotor and left end of stator is more than two rotor tooth pitch (τp; and (2 dend is less than two rotor tooth pitch. Cogging torque is an important component of torque ripple and the period ratio of the cogging torque to the back electromotive force (EMF equals one for the MAL-FSPM before optimization. In order to reduce the torque ripple as much as possible and affect the back EMF as little as possible, influence of period ratio of cogging torque to back EMF on rotor step skewing is investigated. Rotor tooth width and stator slot open width are optimized to increase the period ratio of cogging torque to back EMF. After the optimization, torque ripple is decreased by 79.8% for dend > τp and torque ripple is decreased by 49.7% for dend < τp. Finally, 3D FEM model is established to verify the 2D results.
Directory of Open Access Journals (Sweden)
Nutan Saha
2017-06-01
Full Text Available This paper presents a control scheme for simultaneous control of the speed of Switched Reluctance Motor (SRM and minimizing the torque ripple employing Hybrid Many Optimizing Liaison Gravitational Search Algorithm (Hybrid MOLGSA technique. The control mechanism includes two controlling loops, the outer loop is governed for speed control and a current controller for the inner loop, intelligent selection of turn on and turn off angle for a 60 KW, 3-phase 6/8 SRM. It is noticed that the torque ripple coefficient, ISE of speed & current are reduced by 12.81%, 38.60%, 16.74% respectively by Hybrid MOLGSA algorithm compared to Gravitational Search Algorithm (GSA algorithm. It is also observed that the settling times for the controller using the parameter values for obtaining best values of torque ripple, Integral square error of speed and current are reduced by 51.25%, 58.04% and 59.375% by proposed Hybrid MOLGSA algorithm compared to the GSA algorithm.
Energy Technology Data Exchange (ETDEWEB)
Zamani, Vajiheh Alijani
2012-03-07
This work is divided into two parts: part 1 is focused on the prediction of half-metallicity in quaternary Heusler compounds and their potential for spintronic applications and part 2 on the structural properties of Mn{sub 2}-based Heusler alloys and tuning the magnetism of them from soft to hard-magnetic for spin-transfer torque applications. In part 1, three different series of quaternary Heusler compounds are investigated, XX'MnGa (X=Cu, Ni and X'=Fe,Co), CoFeMnZ (Z=Al,Ga,Si,Ge), and Co{sub 2-x}Rh{sub x}MnZ (Z=Ga,Sn,Sb). All of these quaternary compounds except CuCoMnGa are predicted to be half-metallic ferromagnets by ab-initio electronic structure calculations. In the XX'MnGa class of compounds, NiFeMnGa has a low Curie temperature for technological applications but NiCoMnGa with a high spin polarization, magnetic moment, and Curie temperature is an interesting new material for spintronics applications. All CoFeMnZ compounds exhibit a cubic Heusler structur and their magnetic moments are in fair agreement with the Slater-Pauling rule indicating the halfmetallicity and high spin polarization required for spintronics applications. Their high Curie temperatures make them suitable for utilization at room temperature and above. The structural investigation revealed that the crystal structure of all Co{sub 2-x}Rh{sub x}MnZ compounds aside from CoRhMnSn exhibit different types of anti-site disorder. The magnetic moments of the disordered compounds deviate from the Slater-Pauling rule indicating that 100% spin polarization are not realized in CoRhMnGa, CoRhMnSb, and Co{sub 0.5}Rh{sub 1.5}MnSb. Exchange of one Co in Co{sub 2}MnSn by Rh results in the stable, well-ordered compound CoRhMnSn. This exchange of one of the magnetic Co atoms by a non-magnetic Rh atom keeps the magnetic properties and half-metallicity intact. In part 2, two series of Mn{sub 2}-based Heusler alloys are investigated, Mn{sub 3-x}Co{sub x}Ga and Mn{sub 2-x}Rh{sub 1+x}Sn. It has been
Mohseni, S. Morteza; Yazdi, H. F.; Hamdi, M.; Brächer, T.; Mohseni, S. Majid
2018-03-01
Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free layer, two propagating spin wave modes with different frequency and spatial distribution can be excited simultaneously. Our results indicate that in-plane magnetized spin transfer nano-contacts in PMA materials do not host a solitonic self-localized spin-wave bullet, which is different from previous studies for systems with in plane magnetic anisotropy. This feature renders them interesting for nano-scale magnonic waveguides and crystals since magnon transport can be configured by tuning the applied current.
Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve
Majidi, Leyla; Asgari, Reza
2014-10-01
We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley- and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley- and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β ) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures, whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h ) in F region displays a maximum value at h <λ , which moves towards larger exchange fields by increasing the temperature.
Superconducting spin switch based on superconductor-ferromagnet nanostructures for spintronics
International Nuclear Information System (INIS)
Kehrle, Jan; Mueller, Claus; Obermeier, Guenter; Schreck, Matthias; Gsell, Stefan; Horn, Siegfried; Tidecks, Reinhard; Zdravkov, Vladimir; Morari, Roman; Sidorencko, Anatoli; Prepelitsa, Andrei; Antropov, Evgenii; Socrovisciiuc, Alexei; Nold, Eberhard; Tagirov, Lenar
2011-01-01
Very rapid developing area, spintronics, needs new devices, based on new physical principles. One of such devices - a superconducting spin-switch, consists of ferromagnetic and superconducting layers, and is based on a new phenomenon - reentrant superconductivity. The tuning of the superconducting and ferromagnetic layers thickness is investigated to optimize superconducting spin-switch effect for Nb/Cu 41 Ni 59 based nanoscale layered systems.
Directory of Open Access Journals (Sweden)
A. R. SHAMLOU
2017-12-01
Full Text Available In this paper, a novel two output nine switch-inverter is proposed in order to increase the synchronization speed of induction motors used in electric vehicles (EVs while improving the efficiency and controllability of the system. The number of switches in the proposed inverter is reduced by 25% compared to double six-switch inverters which conventionally used in EVs. The main characteristics of the considered inverter can be noted as follows: sinusoidal input and outputs, unity output power factor, and specifically, low construction cost due to active switch number reduction. The classical direct torque control method causes torque ripple and speed fluctuations. Therefore, in order to increase accuracy and dynamics of drive system, the SVM-DTC method is proposed, leading to less torque ripple and constant switching frequency. The obtained torque ripple is 2% which is less than the existing structures In order to illustrate advantages of the proposed approach, performance of the EVs in the standard cycles is evaluated.
Gate-controlled switching between persistent and inverse persistent spin helix states
International Nuclear Information System (INIS)
Yoshizumi, K.; Sasaki, A.; Kohda, M.; Nitta, J.
2016-01-01
We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.
Gate-controlled switching between persistent and inverse persistent spin helix states
Energy Technology Data Exchange (ETDEWEB)
Yoshizumi, K.; Sasaki, A.; Kohda, M.; Nitta, J. [Department of Materials Science, Tohoku University, Sendai 980-8579 (Japan)
2016-03-28
We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.
Voltage switching technique for detecting nuclear spin polarization in a quantum dot
International Nuclear Information System (INIS)
Takahashi, Ryo; Kono, Kimitoshi; Tarucha, Seigo; Ono, Keiji
2010-01-01
We have introduced a source-drain voltage switching technique for studying nuclear spins in a vertical double quantum dot. Switching the source-drain voltage between the spin-blockade state and the zero-bias Coulomb blockade state can tune the energy difference between the spin singlet and triplet, and effectively turn on/off the hyperfine interaction. Since the change in the nuclear spin state affects the source-drain current, nuclear spin properties can only be detected by transport measurement. Using this technique, we have succeeded in measuring the timescale of nuclear spin depolarization. Furthermore, combining this technique and an RF ac magnetic field, we successfully detected continuous-wave NMR signals of 75 As, 69 Ga, and 71 Ga, which are contained in a quantum dot. (author)
Current induced torques and interfacial spin-orbit coupling: Semiclassical modeling
Haney, Paul M.; Lee, Hyun-Woo; Lee, Kyung-Jin; Manchon, Aurelien; Stiles, M. D.
2013-01-01
, that qualitatively reproduces the behavior, but quantitatively differs in some regimes. We show that the Boltzmann equation with physically reasonable parameters can match the torques for any particular sample, but in some cases, it fails to describe
Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching
Misiorny, Maciej; Barnaś, Józef
2013-01-01
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom's/SMM's spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonan...
International Nuclear Information System (INIS)
Kiryutin, Alexey S.; Yurkovskaya, Alexandra V.; Lukzen, Nikita N.; Ivanov, Konstantin L.; Vieth, Hans-Martin
2015-01-01
A method for precise manipulation of non-thermal nuclear spin polarization by switching a RF-field is presented. The method harnesses adiabatic correlation of spin states in the rotating frame. A detailed theory behind the technique is outlined; examples of two-spin and three-spin systems prepared in a non-equilibrium state by Para-Hydrogen Induced Polarization (PHIP) are considered. We demonstrate that the method is suitable for converting the initial multiplet polarization of spins into net polarization: compensation of positive and negative lines in nuclear magnetic resonance spectra, which is detrimental when the spectral resolution is low, is avoided. Such a conversion is performed for real two-spin and three-spin systems polarized by means of PHIP. Potential applications of the presented technique are discussed for manipulating PHIP and its recent modification termed signal amplification by reversible exchange as well as for preparing and observing long-lived spin states
Keatley, Paul Steven; Redjai Sani, Sohrab; Hrkac, Gino; Majid Mohseni, Seyed; Dürrenfeld, Philipp; Åkerman, Johan; Hicken, Robert James
2017-04-01
Nano-contact spin-torque vortex oscillators (STVOs) are anticipated to find application as nanoscale sources of microwave emission in future technological applications. Presently the output power and phase stability of individual STVOs are not competitive with existing oscillator technologies. Synchronisation of multiple nano-contact STVOs via magnetisation dynamics has been proposed to enhance the microwave emission. The control of device-to-device variations, such as mode splitting of the microwave emission, is essential if multiple STVOs are to be successfully synchronised. In this work a combination of electrical measurements and time-resolved scanning Kerr microscopy (TRSKM) was used to demonstrate how mode splitting in the microwave emission of STVOs was related to the magnetisation dynamics that are generated. The free-running STVO response to a DC current only was used to identify devices and bias magnetic field configurations for which single and multiple modes of microwave emission were observed. Stroboscopic Kerr images were acquired by injecting a small amplitude RF current to phase lock the free-running STVO response. The images showed that the magnetisation dynamics of a multimode device with moderate splitting could be controlled by the injected RF current so that they exhibit similar spatial character to that of a single mode. Significant splitting was found to result from a complicated equilibrium magnetic state that was observed in Kerr images as irregular spatial characteristics of the magnetisation dynamics. Such dynamics were observed far from the nano-contact and so their presence cannot be detected in electrical measurements. This work demonstrates that TRSKM is a powerful tool for the direct observation of the magnetisation dynamics generated by STVOs that exhibit complicated microwave emission. Characterisation of such dynamics outside the nano-contact perimeter permits a deeper insight into the requirements for optimal phase-locking of
Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.
Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan
2017-12-01
We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.
Vector spin modeling for magnetic tunnel junctions with voltage dependent effects
International Nuclear Information System (INIS)
Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.
2014-01-01
Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects
Czech Academy of Sciences Publication Activity Database
Skinner, T.D.; Olejník, Kamil; Cunningham, L.K.; Kurebayashi, H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, Tomáš; Ferguson, A.J.
2015-01-01
Roč. 6, Mar (2015), s. 6730 ISSN 2041-1723 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * current induced torques Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 11.329, year: 2015
Current-induced magnetic switching of a single molecule magnet on a spin valve
International Nuclear Information System (INIS)
Zhang, Xiao; Wang, Zheng-Chuan; Zheng, Qing-Rong; Zhu, Zheng-Gang; Su, Gang
2015-01-01
The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs
Current-induced magnetic switching of a single molecule magnet on a spin valve
Energy Technology Data Exchange (ETDEWEB)
Zhang, Xiao [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Zheng-Chuan, E-mail: wangzc@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zheng, Qing-Rong [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zhu, Zheng-Gang [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); School of Electronics, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China); Su, Gang, E-mail: gsu@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China)
2015-04-17
The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs.
Bang, Do; Yu, Jiawei; Qiu, Xuepeng; Wang, Yi; Awano, Hiroyuki; Manchon, Aurelien; Yang, Hyunsoo
2016-01-01
We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.
Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.
2018-01-01
Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.
Bang, Do
2016-05-23
We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.
Study on spin filtering and switching action in a double-triangular network chain
Zhang, Yongmei
2018-04-01
Spin transport properties of a double-triangular quantum network with local magnetic moment on backbones and magnetic flux penetrating the network plane are studied. Numerical simulation results show that such a quantum network will be a good candidate for spin filter and spin switch. Local dispersion and density of states are considered in the framework of tight-binding approximation. Transmission coefficients are calculated by the method of transfer matrix. Spin transmission is regulated by substrate magnetic moment and magnetic flux piercing those triangles. Experimental realization of such theoretical research will be conducive to designing of new spintronic devices.
Tao, Ze; Chen, F. J.; Zhou, L. Y.; Li, Bin; Tao, Y. C.; Wang, J.
2018-06-01
The interedge coupling is the cardinal characteristic of the narrow quantum spin Hall (QSH) insulator, and thus could bring about exotic transport phenomena. Herein, we present a theoretical investigation of the spin-resolved Andreev reflection (AR) in a QSH insulator strip touching on two neighbouring ferromagnetic insulators and one s-wave superconductor. It is demonstrated that, due to the interplay of the interedge coupling and ferromagnetic configuration, there could be not only usual local ARs leading to the spin-singlet pairing with the incident electron and Andreev-reflected hole from different spin subbands, but also novel local ARs giving rise to the spin-triplet pairing from the same spin subband. However, only the latter exists in the absence of the interedge coupling, and therefore the two pairings in turn testify the helical spin texture of the edge states. By proper tuning of the band structures of the ferromagnetic layers, under the resonance bias voltage, the usual and novel local ARs of can be all exhibited, resulting in fully spin-polarized pure spin-singlet superconductivity and pure spin-triplet superconductivity, respectively, which suggests a superconductivity switch from spin-singlet to -triplet pairing by electrical control. The results can be experimentally confirmed by the tunneling conductance and the noise power.
Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current
Misiorny, Maciej; Barnas, Józef
2006-01-01
Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...
Intraband and interband spin-orbit torques in non-centrosymmetric ferromagnets
Czech Academy of Sciences Publication Activity Database
Li, H.; Gao, L.; Zarbo, Liviu; Výborný, Karel; Wang, X.; Garate, I.; Dogan, F.; Čejchan, Antonín; Sinova, Jairo; Jungwirth, Tomáš; Manchon, A.
2015-01-01
Roč. 91, č. 13 (2015), , "134402-1"-"134402-9" ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * current induced torque s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014
Room-temperature spin-orbit torque in NiMnSb
Czech Academy of Sciences Publication Activity Database
Ciccarelli, C.; Anderson, L.; Tshitoyan, V.; Ferguson, A.J.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Gayles, J.; Železný, Jakub; Šmejkal, Libor; Yuan, Z.; Sinova, Jairo; Freimuth, F.; Jungwirth, Tomáš
2016-01-01
Roč. 12, č. 9 (2016), s. 855-861 ISSN 1745-2473 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : relativistic spintronics * current induced torque s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 22.806, year: 2016
Directory of Open Access Journals (Sweden)
Kalaivani Lakshmanan
2014-01-01
Full Text Available In this paper, various intelligent controllers such as Fuzzy Logic Controller (FLC and Adaptive Neuro Fuzzy Inference System (ANFIS-based current compensating techniques are employed for minimizing the torque ripples in switched reluctance motor. FLC and ANFIS controllers are tuned using MATLAB Toolbox. For the purpose of comparison, the performance of conventional Proportional-Integral (PI controller is also considered. The statistical parameters like minimum, maximum, mean, standard deviation of total torque, torque ripple coefficient and the settling time of speed response for various controllers are reported. From the simulation results, it is found that both FLC and ANFIS controllers gives better performance than PI controller. Among the intelligent controllers, ANFIS gives outer performance than FLC due to its good learning and generalization capabilities thereby improves the dynamic performance of SRM drives.
Diameter dependence of emission power in MgO-based nano-pillar spin-torque oscillators
Energy Technology Data Exchange (ETDEWEB)
Wang, Bochong; Kubota, Hitoshi, E-mail: hit-kubota@aist.go.jp; Yakushiji, Kay; Tamaru, Shingo; Arai, Hiroko; Imamura, Hiroshi; Fukushima, Akio; Yuasa, Shinji [Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
2016-06-20
The dependence on diameter of the emission power in MgO-based nano-pillar spin torque oscillators (STOs) was systematically investigated. A maximum emission power of over 2.5 μW was obtained around 300 nm in diameter, which is the largest reported to date among the out-of-plane precession STOs. By analyzing physical quantities, precession cone angle of the free-layer magnetization was evaluated. In the diameter range below 300 nm, the increase in power was mainly due to the increase of the injected current. The power decrease above 300 nm is possibly attributed to the decrease in the averaged precession cone angle, suggesting spatial phase difference of magnetization precession. This study provides the method for estimating the optimum STO diameter, which is of great importance in practical use.
Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi
2018-05-01
We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.
International Nuclear Information System (INIS)
Suto, Hirofumi; Nagasawa, Tazumi; Kudo, Kiwamu; Mizushima, Koichi; Sato, Rie
2014-01-01
Technology for detecting the magnetization direction of nanoscale magnetic material is crucial for realizing high-density magnetic recording devices. Conventionally, a magnetoresistive device is used that changes its resistivity in accordance with the direction of the stray field from an objective magnet. However, when several magnets are near such a device, the superposition of stray fields from all the magnets acts on the sensor, preventing selective recognition of their individual magnetization directions. Here we introduce a novel readout method for detecting the magnetization direction of a nanoscale magnet by use of a spin-torque oscillator (STO). The principles behind this method are dynamic dipolar coupling between an STO and a nanoscale magnet, and detection of ferromagnetic resonance (FMR) of this coupled system from the STO signal. Because the STO couples with a specific magnet by tuning the STO oscillation frequency to match its FMR frequency, this readout method can selectively determine the magnetization direction of the magnet. (papers)
Energy Technology Data Exchange (ETDEWEB)
Luo, Feilong [School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore); Data Storage Institute, A*STAR Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Goolaup, Sarjoosing; Li, Sihua; Lim, Gerard Joseph; Tan, Funan; Engel, Christian; Zhang, Senfu; Ma, Fusheng; Lew, Wen Siang, E-mail: wensiang@ntu.edu.sg [School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore); Zhou, Tiejun [Data Storage Institute, A*STAR Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
2016-08-28
In this work, we present an efficient method for characterizing the spin orbit torque field-like term in an in-plane magnetized system using the harmonic measurement technique. This method does not require a priori knowledge of the planar and anomalous hall resistances and is insensitive to non-uniformity in magnetization, as opposed to the conventional harmonic technique. We theoretically and experimentally demonstrate that the field-like term in the Ta/Co/Pt film stack with in-plane magnetic anisotropy can be obtained by an in-plane transverse field sweep as expected, and magnetization non-uniformity is prevented by the application of fixed magnetic field. The experimental results are in agreement with the analytical calculations.
Analytical description of ballistic spin currents and torques in magnetic tunnel junctions
Chshiev, M.; Manchon, Aurelien; Kalitsov, A.; Ryzhanova, N.; Vedyayev, A.; Strelkov, N.; Butler, W. H.; Dieny, B.
2015-01-01
In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed
Quantum dot spin-V(E)CSELs: polarization switching and periodic oscillations
Li, Nianqiang; Alexandropoulos, Dimitris; Susanto, Hadi; Henning, Ian; Adams, Michael
2017-09-01
Spin-polarized vertical (external) cavity surface-emitting lasers [Spin-V(E)CSELs] using quantum dot (QD) material for the active region, can display polarization switching between the right- and left-circularly polarized fields via control of the pump polarization. In particular, our previous experimental results have shown that the output polarization ellipticity of the spin-V(E)CSEL emission can exhibit either the same handedness as that of the pump polarization or the opposite, depending on the experimental operating conditions. In this contribution, we use a modified version of the spin-flip model in conjunction with combined time-independent stability analysis and direct time integration. With two representative sets of parameters our simulation results show good agreement with experimental observations. In addition periodic oscillations provide further insight into the dynamic properties of spin-V(E)CSELs.
Fgeppert, E.
1984-09-01
Mechanical means for sensing turning torque generated by the load forces in a rotary drive system is described. The sensing means is designed to operate with minimal effect on normal operation of the drive system. The invention can be employed in various drive systems, e.g., automotive engine-transmission power plants, electric motor-operated tools, and metal cutting machines. In such drive systems, the torque-sensing feature may be useful for actuation of various control devices, such as electric switches, mechanical clutches, brake actuators, fluid control valves, or audible alarms. The torque-sensing function can be used for safety overload relief, motor de-energization, engine fuel control transmission clutch actuation, remote alarm signal, tool breakage signal, etc.
Magnetic switching of a single molecular magnet due to spin-polarized current
Misiorny, Maciej; Barnaś, Józef
2007-04-01
Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.
Effect of thermal fluctuations in spin-torque driven magnetization dynamics
International Nuclear Information System (INIS)
Bonin, R.; Bertotti, G.; Serpico, C.; Mayergoyz, I.D.; D'Aquino, M.
2007-01-01
Nanomagnets with uniaxial symmetry driven by an external field and spin-polarized currents are considered. Anisotropy, applied field, and spin polarization are all aligned along the symmetry axis. Thermal fluctuations are described by adding a Gaussian white noise stochastic term to the Landau-Lifshitz-Gilbert equation for the deterministic dynamics. The corresponding Fokker-Planck equation is derived. It is shown that deterministic dynamics, thermal relaxation, and transition rate between stable states are governed by an effective potential including the effect of current injection
Effect of thermal fluctuations in spin-torque driven magnetization dynamics
Energy Technology Data Exchange (ETDEWEB)
Bonin, R. [INRiM, I-10135 Turin (Italy)]. E-mail: bonin@inrim.it; Bertotti, G. [INRiM, I-10135 Turin (Italy); Serpico, C. [Dipartimento di Ingegneria Elettrica, Universita di Napoli ' Federico II' I-80125 Naples (Italy); Mayergoyz, I.D. [Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742 (United States); D' Aquino, M. [Dipartimento per le Tecnologie, Universita di Napoli ' Parthenope' , I-80133 Naples (Italy)
2007-09-15
Nanomagnets with uniaxial symmetry driven by an external field and spin-polarized currents are considered. Anisotropy, applied field, and spin polarization are all aligned along the symmetry axis. Thermal fluctuations are described by adding a Gaussian white noise stochastic term to the Landau-Lifshitz-Gilbert equation for the deterministic dynamics. The corresponding Fokker-Planck equation is derived. It is shown that deterministic dynamics, thermal relaxation, and transition rate between stable states are governed by an effective potential including the effect of current injection.
International Nuclear Information System (INIS)
Sanid, C; Murugesh, S
2014-01-01
We propose a system of two coupled spin-torque nano-oscillators (STNOs), one driver and another response, and demonstrate using numerical studies the synchronization of the response system to the frequency of the driver system. To this end we use a high-speed operational amplifier in the form of a voltage follower, which essentially isolates the drive system from the response system. We find the occurrence of 1 : 1 as well as 2 : 1 synchronization in the system, wherein the oscillators show limit cycle dynamics. An increase in power output is noticed when the two oscillators are locked in 1 : 1 synchronization. Moreover in the crossover region between these two synchronization dynamics we show the existence of chaotic dynamics in the slave system. The coupled dynamics under periodic forcing, using a small ac input current in addition to that of the dc part, is also studied. The slave oscillator is seen to retain its qualitative identity in the parameter space in spite of being fed in, at times, a chaotic signal. Such electrically coupled STNOs will be highly useful in fabricating commercial spin-valve oscillators with high power output, when integrated with other spintronic devices. (paper)
Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng
2017-07-01
Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.
Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching
Misiorny, Maciej; Barnaś, Józef
2013-07-01
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom’s or SMM’s spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonant peaks in the average values of the molecule’s spin and in the charge current. These features appear at some resonant fields and are observable when at least one of the electrodes is ferromagnetic.
Zhang, G. P.; Si, M. S.; George, T. F.
2011-04-01
Most laser-induced femtosecond magnetism investigations are done in magnetic thin films. Nanostructured magnetic dots, with their reduced dimensionality, present new opportunities for spin manipulation. Here we predict that if a magnetic dot has a dipole-forbidden transition between the lowest occupied molecular orbital (LUMO) and the highest unoccupied molecular orbital (HOMO), but a dipole-allowed transition between LUMO+1 and HOMO, electromagnetically induced transparency can be used to prevent ultrafast laser-induced spin momentum reduction, or spin protection. This is realized through a strong dump pulse to funnel the population into LUMO+1. If the time delay between the pump and dump pulses is longer than 60 fs, a population inversion starts and spin switching is achieved. These predictions are detectable experimentally.
Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo
Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.
Asymmetric angular dependence of spin-transfer torques in CoFe/Mg-B-O/CoFe magnetic tunnel junctions
Energy Technology Data Exchange (ETDEWEB)
Tang, Ling, E-mail: lingtang@zjut.edu.cn; Xu, Zhi-Jun, E-mail: xzj@zjut.edu.cn; Zuo, Xian-Jun; Yang, Ze-Jin, E-mail: zejinyang@zjut.edu.cn [Department of Applied Physics, College of Science, Zhejiang University of Technology, Hangzhou 310023 (China); Gao, Qing-He [College of Science, Northeastern University, Shenyang 110004, China, Information Engineering College, Liaoning University of Traditional Chinese Medicine, Shenyang 110847 (China); Linghu, Rong-Feng, E-mail: linghu@gznu.edu.cn [School of Physics and Electronics Sciences, Guizhou Education University, Guiyang 550018 (China); Guo, Yun-Dong, E-mail: g308yd@126.com [College of Engineering and Technology, Neijiang Normal University, Neijiang 641112 (China)
2016-04-28
Using a first-principles noncollinear wave-function-matching method, we studied the spin-transfer torques (STTs) in CoFe/Mg-B-O/CoFe(001) magnetic tunnel junctions (MTJs), where three different types of B-doped MgO in the spacer are considered, including B atoms replacing Mg atoms (Mg{sub 3}BO{sub 4}), B atoms replacing O atoms (Mg{sub 4}BO{sub 3}), and B atoms occupying interstitial positions (Mg{sub 4}BO{sub 4}) in MgO. A strong asymmetric angular dependence of STT can be obtained both in ballistic CoFe/Mg{sub 3}BO{sub 4} and CoFe/Mg{sub 4}BO{sub 4} based MTJs, whereas a nearly symmetric STT curve is observed in the junctions based on CoFe/Mg{sub 4}BO{sub 3}. Furthermore, the asymmetry of the angular dependence of STT can be suppressed significantly by the disorder of B distribution. Such skewness of STTs in the CoFe/Mg-B-O/CoFe MTJs could be attributed to the interfacial resonance states induced by the B diffusion into MgO spacer.
Non-stochastic switching and emergence of magnetic vortices in artificial quasicrystal spin ice
Energy Technology Data Exchange (ETDEWEB)
Bhat, V.S., E-mail: vinayak.bhat@uky.edu [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States); Farmer, B.; Smith, N.; Teipel, E.; Woods, J. [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States); Sklenar, J.; Ketterson, J.B. [Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208-3112 (United States); Hastings, J.T. [Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY 40506-0055 (United States); De Long, L.E. [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States)
2014-08-15
Highlights: • We studied magnetic reversal in a fivefold rotational symmetric artificial quasicrystal spin ice. • Our experiments and simulations suggest the presence of non-stochastic switching in the quasicrystal. • Simulations reveal a strong connection between FM reversal and formation of vortex loops in the quasicrystal. • Our study shows that the magnetic reversal in the artificial quasicrystal is a collective phenomenon. - Abstract: Previous studies of artificial spin ice have been largely restricted to periodic dot lattices. Ferromagnetic switching of segments in an applied magnetic field is stochastic in periodic spin ice systems, which makes emergent phenomena, such as the formation of vortex loops, hard to control or predict. We fabricated finite, aperiodic Penrose P2 tilings as antidot lattices with fivefold rotational symmetry in permalloy thin films. Measurements of the field dependence of the static magnetization reveal reproducible knee anomalies whose number and form are temperature dependent, which suggests they mark cooperative rearrangements of the tiling magnetic texture. Our micromagnetic simulations of the P2 tiling are in good agreement with experimental magnetization data and exhibit non-stochastic magnetic switching of segments in applied field, and vortex loops that are stable over an extended field interval during magnetic reversal.
In search of a quasi-zero dimensional quantum spin-switching device
International Nuclear Information System (INIS)
Hancock, Y.
2002-01-01
Full text: In this paper, we propose a theoretical mechanism and potential application for quantum spin switching systems of the generic NMMMMMN type. In this case, N and M respectively refer to non-magnetic and magnetic atoms, of a 7-site finite, inhomogeneous system. We base our understanding on recent investigations into the magnetic induction mechanism on the N-type sites. Such investigations were performed within the context of the Hubbard Model, using both Hartree-Fock and Exact Diagonalization studies. In this work, we have used exact diagonalization studies to probe the spin-spin (2-site) correlation results of these systems, as a function of the model parameters and electron filling. Such calculations were performed within the context of the Hubbard and the Extended Hubbard Models. We have used our results as a means of investigating the proposed quantum spin-switching mechanism within the context of the full many-body problem. In addition to investigating this mechanism, we aim to propose a more realistic theoretical context in which the potential of these systems can be further explored
Current-induced switching in a magnetic insulator
Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.
2017-03-01
The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.
Energy Technology Data Exchange (ETDEWEB)
Tomczak, Y., E-mail: Yoann.Tomczak@imec.be [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium); Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A. [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Liu, E. [Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium)
2016-01-25
Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.
Temperature induced Spin Switching in SmFeO3 Single Crystal
Cao, Shixun; Zhao, Huazhi; Kang, Baojuan; Zhang, Jincang; Ren, Wei
2014-08-01
The prospect of controlling the magnetization (M) of a material is of great importance from the viewpoints of fundamental physics and future applications of emerging spintronics. A class of rare-earth orthoferrites RFeO3 (R is rare-earth element) materials exhibit striking physical properties of spin switching and magnetization reversal induced by temperature and/or applied magnetic field. Furthermore, due to the novel magnetic, magneto-optic and multiferroic properties etc., RFeO3 materials are attracting more and more interests in recent years. We have prepared and investigated a prototype of RFeO3 materials, namely SmFeO3 single-crystal. And we report magnetic measurements upon both field cooling (FC) and zero-field cooling (ZFC) of the sample, as a function of temperature and applied magnetic field. The central findings of this study include that the magnetization of single-crystal SmFeO3 can be switched by temperature, and tuning the magnitude of applied magnetic field allows us to realize such spin switching even at room temperature.
International Nuclear Information System (INIS)
Fernández-Pacheco, A.; Mansell, R.; Petit, D.; Lee, J. H.; Cowburn, R. P.; Ummelen, F. C.; Swagten, H. J. M.
2014-01-01
We have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.
Directory of Open Access Journals (Sweden)
Robert Göckeritz
2016-04-01
Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.
Atomistic switch of giant magnetoresistance and spin thermopower in graphene-like nanoribbons
Zhai, Ming-Xing; Wang, Xue-Feng
2016-01-01
We demonstrate that the giant magnetoresistance can be switched off (on) in even- (odd-) width zigzag graphene-like nanoribbons by an atomistic gate potential or edge disorder inside the domain wall in the antiparallel (ap) magnetic configuration. A strong magneto-thermopower effect is also predicted that the spin thermopower can be greatly enhanced in the ap configuration while the charge thermopower remains low. The results extracted from the tight-binding model agree well with those obtained by first-principles simulations for edge doped graphene nanoribbons. Analytical expressions in the simplest case are obtained to facilitate qualitative analyses in general contexts. PMID:27857156
Quantifying the effects of disorder on switching of perpendicular spin ice arrays
Kempinger, Susan; Fraleigh, Robert; Lammert, Paul; Crespi, Vincent; Samarth, Nitin; Zhang, Sheng; Schiffer, Peter
There is much contemporary interest in probing custom designed, frustrated systems such as artificial spin ice. To that end, we study arrays of lithographically patterned, single-domain Pt/Co multilayer islands. Due to the perpendicular anisotropy of these materials, we are able to use diffraction-limited magneto-optical Kerr effect microscopy to access the magnetic state in situ with an applied field. As we tune the interaction strength by adjusting the lattice spacing, we observe the switching field distribution broadening with increasing dipolar interactions. Using a simple mathematical analysis we extract the intrinsic disorder (the disorder that would be present without interactions) from these switching field distributions. We also characterize the intrinsic disorder by systematically removing neighbor effects from the switching field distribution. Understanding this disorder contribution as well as the interaction strength allows us to more accurately characterize the moment correlation. This project was funded by the US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Grant No. DE- SC0010778
All-optical spin switching: A new frontier in femtomagnetism — A short review and a simple theory
Zhang, G. P.; Latta, T.; Babyak, Z.; Bai, Y. H.; George, Thomas F.
2016-08-01
Using an ultrafast laser pulse to manipulate the spin degree of freedom has broad technological appeal. It allows one to control the spin dynamics on a femtosecond time scale. The discipline, commonly called femtomagnetism, started with the pioneering experiment by Beaurepaire and coworkers in 1996, who showed subpicosecond demagnetization occurs in magnetic Ni thin films. This finding has motivated extensive research worldwide. All-optical helicity-dependent spin switching (AO-HDS) represents a new frontier in femtomagnetism, where a single ultrafast laser pulse can permanently switch spin without any assistance from a magnetic field. This review summarizes some of the crucial aspects of this new discipline: key experimental findings, leading mechanisms, controversial issues, and possible future directions. The emphasis is on our latest investigation. We first develop the all-optical spin switching (AOS) rule that determines how the switchability depends on the light helicity. This rule allows one to understand microscopically how the spin is reversed and why the circularly polarized light appears more powerful than the linearly polarized light. Then we invoke our latest spin-orbit coupled harmonic oscillator model to simulate single spin reversal. We consider both continuous wave (cw) excitation and pulsed laser excitation. The results are in a good agreement with the experimental result (a MatLab code is available upon request from the author). We then extend the code to include the exchange interaction among different spin sites. We show where the “inverse-Faraday field” comes from and how the laser affects the spin reversal nonlinearly. Our hope is that this review will motivate new experimental and theoretical investigations and discussions.
Useinov, Arthur; Lin, Hsiu-Hau; Lai, Chih-Huang
2017-08-21
The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d av tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (d av ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer.
Thermomagnetic torque in hydrogen isotopes
International Nuclear Information System (INIS)
Cramer, J.A.
1975-01-01
The thermomagnetic torque has been measured in parahydrogen and ortho and normal deuterium for pressures from 0.10 to 2.0 torr and temperatures from 100 to 370 K. Since the torque depends on the precession of the molecular rotational magnetic moment around the field direction, coupling of the molecular nuclear spin to the rotational moment can affect the torque. Evidence of spin coupling effects is found for the torque in both deuterium modifications. In para hydrogen the torque at all temperatures and pressures exhibits behavior expected of a gas of zero nuclear spin molecules. Additionally, earlier data for hydrogen deuteride and for normal hydrogen from 105 to 374 K are evaluated and discussed. The high pressure limiting values of torque peak heights and positions for all these gases are compared with theory
Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures
Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan
Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.
Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming
2018-04-01
This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.
Electric field controlled reversible magnetic anisotropy switching studied by spin rectification
Energy Technology Data Exchange (ETDEWEB)
Zhou, Hengan; Fan, Xiaolong, E-mail: fanxiaolong@lzu.edu.cn; Wang, Fenglong; Jiang, Changjun; Rao, Jinwei; Zhao, Xiaobing; Xue, Desheng [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Gui, Y. S.; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)
2014-03-10
In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg{sub 1∕3}Nb{sub 2∕3})O{sub 3}-PbTiO{sub 3} substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time.
Electric field controlled reversible magnetic anisotropy switching studied by spin rectification
International Nuclear Information System (INIS)
Zhou, Hengan; Fan, Xiaolong; Wang, Fenglong; Jiang, Changjun; Rao, Jinwei; Zhao, Xiaobing; Xue, Desheng; Gui, Y. S.; Hu, C.-M.
2014-01-01
In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg 1∕3 Nb 2∕3 )O 3 -PbTiO 3 substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time
Smeigh, Amanda L; Creelman, Mark; Mathies, Richard A; McCusker, James K
2008-10-29
A combination of femtosecond electronic absorption and stimulated Raman spectroscopies has been employed to determine the kinetics associated with low-spin to high-spin conversion following charge-transfer excitation of a FeII spin-crossover system in solution. A time constant of tau = 190 +/- 50 fs for the formation of the 5T2 ligand-field state was assigned based on the establishment of two isosbestic points in the ultraviolet in conjunction with changes in ligand stretching frequencies and Raman scattering amplitudes; additional dynamics observed in both the electronic and vibrational spectra further indicate that vibrational relaxation in the high-spin state occurs with a time constant of ca. 10 ps. The results set an important precedent for extremely rapid, formally forbidden (DeltaS = 2) nonradiative relaxation as well as defining the time scale for intramolecular optical switching between two electronic states possessing vastly different spectroscopic, geometric, and magnetic properties.
Spin dynamics under local gauge fields in chiral spin-orbit coupling systems
International Nuclear Information System (INIS)
Tan, S.G.; Jalil, M.B.A.; Fujita, T.; Liu, X.J.
2011-01-01
Research highlights: → We derive a modified LLG equation in magnetic systems with spin-orbit coupling (SOC). → Our results are applied to magnetic multilayers, and DMS and magnetic Rashba systems. → SOC mediated magnetization switching is predicted in rare earth metals (large SOC). → The magnetization trajectory and frequency can be modulated by applied voltage. → This facilitates potential application as tunable microwave oscillators. - Abstract: We present a theoretical description of local spin dynamics in magnetic systems with a chiral spin texture and finite spin-orbit coupling (SOC). Spin precession about the relativistic effective magnetic field in a SOC system gives rise to a non-Abelian SU(2) gauge field reminiscent of the Yang-Mills field. In addition, the adiabatic relaxation of electron spin along the local spin yields an U(1) x U(1) topological gauge (Berry) field. We derive the corresponding equation of motion i.e. modified Landau-Lifshitz-Gilbert (LLG) equation, for the local spin under the influence of these effects. Focusing on the SU(2) gauge, we obtain the spin torque magnitude, and the amplitude and frequency of spin oscillations in this system. Our theoretical estimates indicate significant spin torque and oscillations in systems with large spin-orbit coupling, which may be utilized in technological applications such as current-induced magnetization-switching and tunable microwave oscillators.
Engel, Christian; Goolaup, Sarjoosing; Luo, Feilong; Lew, Wen Siang
2017-08-01
Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT effective field dependence on the out-of-plane magnetization angle has been relatively extensive, the understanding of in-plane magnetization angle dependence remains unknown. Here, we analytically propose a method to compute the SOT effective fields as a function of the in-plane magnetization angle using the harmonic Hall technique in perpendicular magnetic anisotropy (PMA) structures. Two different samples with PMA, a Pt /Co /Pt /Co /Ta /BaTi O3 (BTO) test sample and a Pt/Co/Pt/Co/Ta reference sample, are studied using the derived formula. Our measurements reveal that only the dampinglike field of the test sample with a BTO capping layer exhibits an in-plane magnetization angle dependence, while no angular dependence is found in the reference sample. The presence of the BTO layer in the test sample, which gives rise to a Rashba effect at the interface, is ascribed as the source of the angular dependence of the dampinglike field.
Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu
2017-04-01
Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.
Sadovnikov, A. V.; Odintsov, S. A.; Beginin, E. N.; Sheshukova, S. E.; Sharaevskii, Yu. P.; Nikitov, S. A.
2017-10-01
We demonstrate that the nonlinear spin-wave transport in two laterally parallel magnetic stripes exhibit the intensity-dependent power exchange between the adjacent spin-wave channels. By the means of Brillouin light scattering technique, we investigate collective nonlinear spin-wave dynamics in the presence of magnetodipolar coupling. The nonlinear intensity-dependent effect reveals itself in the spin-wave mode transformation and differential nonlinear spin-wave phase shift in each adjacent magnetic stripe. The proposed analytical theory, based on the coupled Ginzburg-Landau equations, predicts the geometry design involving the reduction of power requirement to the all-magnonic switching. A very good agreement between calculation and experiment was found. In addition, a micromagnetic and finite-element approach has been independently used to study the nonlinear behavior of spin waves in adjacent stripes and the nonlinear transformation of spatial profiles of spin-wave modes. Our results show that the proposed spin-wave coupling mechanism provides the basis for nonlinear magnonic circuits and opens the perspectives for all-magnonic computing architecture.
Kim, Howon; Chang, Yun Hee; Lee, Soon-Hyeong; Kim, Yong-Hyun; Kahng, Se-Jong
2013-10-22
Controlling and sensing spin states of magnetic molecules at the single-molecule level is essential for spintronic molecular device applications. Here, we demonstrate that spin states of Co-porphyrin on Au(111) can be reversibly switched over by binding and unbinding of the NO molecule and can be sensed using scanning tunneling microscopy and spectroscopy (STM and STS). Before NO exposure, Co-porphryin showed a clear zero-bias peak, a signature of Kondo effect in STS, whereas after NO exposures, it formed a molecular complex, NO-Co-porphyrin, that did not show any zero-bias feature, implying that the Kondo effect was switched off by binding of NO. The Kondo effect could be switched back on by unbinding of NO through single-molecule manipulation or thermal desorption. Our density functional theory calculation results explain the observations with pairing of unpaired spins in dz(2) and ppπ* orbitals of Co-porphyrin and NO, respectively. Our study opens up ways to control molecular spin state and Kondo effect by means of enormous variety of bimolecular binding and unbinding reactions on metallic surfaces.
International Nuclear Information System (INIS)
Lee, Jia-Mou; Yang, Dong-Chin; Lee, Ching-Ming; Ye, Lin-Xiu; Chang, Yao-Jen; Wu, Te-ho; Lee, Yen-Chi; Wu, Jong-Ching
2013-01-01
We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 × 400 nm 2 . The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm −2 . This method demonstrates the potential skill to characterize nanometre-scale magnetic devices. (paper)
Computerized Torque Control for Large dc Motors
Willett, Richard M.; Carroll, Michael J.; Geiger, Ronald V.
1987-01-01
Speed and torque ranges in generator mode extended. System of shunt resistors, electronic switches, and pulse-width modulation controls torque exerted by large, three-phase, electronically commutated dc motor. Particularly useful for motor operating in generator mode because it extends operating range to low torque and high speed.
Thermal or nonthermal? That is the question for ultrafast spin switching in GdFeCo.
Zhang, G P; George, Thomas F
2013-09-11
GdFeCo is among the most interesting magnets for producing laser-induced femtosecond magnetism, where light can switch its spin moment from one direction to another. This paper aims to set a criterion for the thermal/nonthermal mechanism: we propose to use the Fermi-Dirac distribution function as a reliable criterion. A precise value for the thermalization time is needed, and through a two-level model, we show that since there is no direct connection between the laser helicity and the definition of thermal/nonthermal processes, the helicity is a poor criterion for differentiating a thermal from a nonthermal process. In addition, we propose a four-site model system (Gd2Fe2) for investigating the transient ferromagnetic ordering between Gd and Fe ions. We find that states of two different kinds can allow such an ordering. One state is a pure ferromagnetic state with ferromagnetic ordering among all the ions, and the other is the short-ranged ferromagnetic ordering of a pair of Gd and Fe ions.
Full-switching FSF-type superconducting spin-triplet magnetic random access memory element
Lenk, D.; Morari, R.; Zdravkov, V. I.; Ullrich, A.; Khaydukov, Yu.; Obermeier, G.; Müller, C.; Sidorenko, A. S.; von Nidda, H.-A. Krug; Horn, S.; Tagirov, L. R.; Tidecks, R.
2017-11-01
In the present work a superconducting Co/CoOx/Cu41Ni59 /Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field applied parallel to the film plane. In more detail, around zero applied field, Tc is lower when the field is changed from negative to positive polarity (with respect to the cooling field), compared to the opposite case. We interpret this finding as the result of the generation of the odd-in-frequency triplet component of superconductivity arising at noncollinear orientation of the magnetizations in the Cu41Ni59 layer adjacent to the CoOx layer. This interpretation is supported by superconducting quantum interference device magnetometry, which revealed a correlation between details of the magnetic structure and the observed superconducting spin-valve effects. Readout of information is possible at zero applied field and, thus, no permanent field is required to stabilize both states. Consequently, this system represents a superconducting magnetic random access memory element for superconducting electronics. By applying increased transport currents, the system can be driven to the full switching mode between the completely superconducting and the normal state.
Energy Technology Data Exchange (ETDEWEB)
Dutta, Sourav, E-mail: sdutta38@gatech.edu; Naeemi, Azad [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A. [Components Research, Intel Corporation, Hillsboro, Oregon 97124 (United States)
2015-11-09
The possibility of achieving phase-dependent deterministic switching of the magnetoelectric spin wave detector in the presence of thermal noise has been discussed. The proposed idea relies on the modification of the energy landscape by partially canceling the out-of-plane demagnetizing field and the resultant change in the intrinsic magnetization dynamics to drive the nanomagnet towards a preferential final magnetization state. The remarkable increase in the probability of successful switching can be accounted for by the shift in the location of the saddle point in the energy landscape and a resultant change in the nature of the relaxation dynamics of the magnetization from a highly precessional to a fairly damped one and an increased dependence on the initial magnetization values, a crucial requirement for phase-dependent spin wave detection.
Magnetization switching schemes for nanoscale three-terminal spintronics devices
Fukami, Shunsuke; Ohno, Hideo
2017-08-01
Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.
Jasper-Toennies, Torben; Gruber, Manuel; Karan, Sujoy; Jacob, Hanne; Tuczek, Felix; Berndt, Richard
2017-11-08
The switching between two spin states makes spin-crossover molecules on surfaces very attractive for potential applications in molecular spintronics. Using scanning tunneling microscopy, the successful deposition of [Fe(pap) 2 ] + (pap = N-2-pyridylmethylidene-2-hydroxyphenylaminato) molecules on Cu 2 N/Cu(100) surface is evidenced. The deposited Fe III spin-crossover compound is controllably switched between three different states, each of them exhibiting a characteristic tunneling conductance. The conductance is therefore employed to readily read the state of the molecules. A comparison of the experimental data with the results of density functional theory calculations reveals that all Fe(pap) 2 molecules are initially in their high-spin state. The two other states are compatible with the low-spin state of the molecule but differ with respect to their coupling to the substrate. As a proof of concept, the reversible and selective nature of the switching is used to build a two-molecule memory.
Fast and efficient STT switching in MTJ using additional transient pulse current
Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill
2017-06-01
We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.
International Nuclear Information System (INIS)
Biswas, Ayan K; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha
2015-01-01
In artificial neural networks, neurons are usually implemented with highly dissipative CMOS-based operational amplifiers. A more energy-efficient implementation is a ‘spin-neuron’ realized with a magneto-tunneling junction (MTJ) that is switched with a spin-polarized current (representing weighted sum of input currents) that either delivers a spin transfer torque or induces domain wall motion in the soft layer of the MTJ to mimic neuron firing. Here, we propose and analyze a different type of spin-neuron in which the soft layer of the MTJ is switched with mechanical strain generated by a voltage (representing weighted sum of input voltages) and term it straintronic spin-neuron. It dissipates orders of magnitude less energy in threshold operations than the traditional current-driven spin neuron at 0 K temperature and may even be faster. We have also studied the room-temperature firing behaviors of both types of spin neurons and find that thermal noise degrades the performance of both types, but the current-driven type is degraded much more than the straintronic type if both are optimized for maximum energy-efficiency. On the other hand, if both are designed to have the same level of thermal degradation, then the current-driven version will dissipate orders of magnitude more energy than the straintronic version. Thus, the straintronic spin-neuron is superior to current-driven spin neurons. (paper)
International Nuclear Information System (INIS)
Chavent, A.; Ducruet, C.; Portemont, C.; Creuzet, C.; Alvarez-Hérault, J.; Vila, L.; Sousa, R. C.; Prejbeanu, I. L.; Dieny, B.
2015-01-01
This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ∼3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer
Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing
2018-02-01
Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.
Sasaki, Taro; Endoh, Tetsuo
2018-04-01
In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T–1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10 ns writing period and 1.2 V V DD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (D MTJ) is scaled down from 55 to 15 nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.
International Nuclear Information System (INIS)
Bazaliy, Y. B.; Jones, B. A.
2002-01-01
''Spin-transfer'' torque is created when electric current is passed through metallic ferromagnets and may have interesting applications in spintronics. So far it was experimentally studied in ''collinear'' geometries, where it is difficult to predict whether magnetization will coherently rotate or spin-waves will be generated. Here we propose an easy modification of existing experiment in which the spin-polarization of incoming current will no longer be collinear with magnetization and recalculate the switching behavior of the device. We expect that a better agreement with the magnetization rotation theory will be achieved. That can be an important step in reconciling alternative points of view on the effect of spin-transfer torque
Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction
Wang, Xuhui; Manchon, Aurelien
2012-01-01
In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.
Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction
Wang, Xuhui
2012-03-13
In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.
Circuit Simulation of All-Spin Logic
Alawein, Meshal
2016-05-01
With the aggressive scaling of complementary metal-oxide semiconductor (CMOS) nearing an inevitable physical limit and its well-known power crisis, the quest for an alternative/augmenting technology that surpasses the current semiconductor electronics is needed for further technological progress. Spintronic devices emerge as prime candidates for Beyond CMOS era by utilizing the electron spin as an extra degree of freedom to decrease the power consumption and overcome the velocity limit connected with the charge. By using the nonvolatility nature of magnetization along with its direction to represent a bit of information and then manipulating it by spin-polarized currents, routes are opened for combined memory and logic. This would not have been possible without the recent discoveries in the physics of nanomagnetism such as spin-transfer torque (STT) whereby a spin-polarized current can excite magnetization dynamics through the transfer of spin angular momentum. STT have expanded the available means of switching the magnetization of magnetic layers beyond old classical techniques, promising to fulfill the need for a new generation of dense, fast, and nonvolatile logic and storage devices. All-spin logic (ASL) is among the most promising spintronic logic switches due to its low power consumption, logic-in-memory structure, and operation on pure spin currents. The device is based on a lateral nonlocal spin valve and STT switching. It utilizes two nanomagnets (whereby information is stored) that communicate with pure spin currents through a spin-coherent nonmagnetic channel. By using the well-known spin physics and the recently proposed four-component spin circuit formalism, ASL can be thoroughly studied and simulated. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall
Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity
Kim, Duk Y.; Lin, Shi-Zeng; Weickert, Franziska; Bauer, Eric D.; Ronning, Filip; Thompson, Joe D.; Movshovich, Roman
Unconventional superconductor CeCoIn5 orders magnetically in a spin-density-wave (SDW) in the low-temperature and high-field corner of the superconducting phase. Recent neutron scattering experiment revealed that the single-domain SDW's ordering vector Q depends strongly on the direction of the magnetic field, switching sharply as the field is rotated through the anti-nodal direction. This switching may be manifestation of a pair-density-wave (PDW) p-wave order parameter, which develops in addition to the well-established d-wave order parameter due to the SDW formation. We have investigated the hypersensitivity of the magnetic domain with a thermal conductivity measurement. The heat current (J) was applied along the [110] direction such that the Q vector is either perpendicular or parallel to J, depending on the magnetic field direction. A discontinuous change of the thermal conductivity was observed when the magnetic field is rotated around the [100] direction within 0 . 2° . The thermal conductivity with the Q parallel to the heat current (J ∥Q) is approximately 15% lager than that with the Q perpendicular to the heat current (J ⊥Q). This result is consistent with additional gapping of the nodal quasiparticle by the p-wave PDW coupled to SDW. Work at Los Alamos was performed under the auspices of the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering.
Anomalous Kondo-Switching Effect of a Spin-Flip Quantum Dot Embedded in an Aharonov-Bohm Ring
International Nuclear Information System (INIS)
Chen Xiongwen; Shi Zhengang; Song Kehui
2009-01-01
We theoretically investigate the Kondo effect of a quantum dot embedded in a mesoscopic Aharonov-Bohm (AB) ring in the presence of the spin flip processes by means of the one-impurity Anderson Hamiltonian. Based on the slave-boson mean-field theory, we find that in this system the persistent current (PC) sensitively depends on the parity and size of the AB ring and can be tuned by the spin-flip scattering (R). In the small AB ring, the PC is suppressed due to the enhancing R weakening the Kondo resonance. On the contrary, in the large AB ring, with R increasing, the peak of PC firstly moves up to max-peak and then down. Especially, the PC phase shift of π appears suddenly with the proper value of R, implying the existence of the anomalous Kondo effect in this system. Thus this system may be a candidate for quantum switch. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Impact of Disorder on Spin Dependent Transport Phenomena
Saidaoui, Hamed
2016-07-03
The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using
Magnon-mediated Dzyaloshinskii-Moriya torque in homogeneous ferromagnets
Manchon, Aurelien; Ndiaye, Papa Birame; Moon, Jung-Hwan; Lee, Hyun-Woo; Lee, Kyung-Jin
2014-01-01
the time-averaged magnetization direction and display a number of similarities with the torques arising from the electron flow in a magnetic two-dimensional electron gas with Rashba spin-orbit coupling. This magnon-mediated spin-orbit torque can
Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli
2015-01-01
We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.
Magnon-mediated Dzyaloshinskii-Moriya torque in homogeneous ferromagnets
Manchon, Aurelien
2014-12-01
In thin magnetic layers with structural inversion asymmetry and spin-orbit coupling, the Dzyaloshinskii-Moriya interaction arises at the interface. When a spin-wave current jm flows in a system with a homogeneous magnetization m, this interaction produces an effective fieldlike torque of the form TFLm×(z×jm) as well as a dampinglike torque, TDLm×[(z×jm)×m], the latter only in the presence of spin-wave relaxation (z is normal to the interface). These torques mediated by the magnon flow can reorient the time-averaged magnetization direction and display a number of similarities with the torques arising from the electron flow in a magnetic two-dimensional electron gas with Rashba spin-orbit coupling. This magnon-mediated spin-orbit torque can be efficient in the case of magnons driven by a thermal gradient.
Magnetic moment of inertia within the torque-torque correlation model.
Thonig, Danny; Eriksson, Olle; Pereiro, Manuel
2017-04-19
An essential property of magnetic devices is the relaxation rate in magnetic switching which strongly depends on the energy dissipation. This is described by the Landau-Lifshitz-Gilbert equation and the well known damping parameter, which has been shown to be reproduced from quantum mechanical calculations. Recently the importance of inertia phenomena have been discussed for magnetisation dynamics. This magnetic counterpart to the well-known inertia of Newtonian mechanics, represents a research field that so far has received only limited attention. We present and elaborate here on a theoretical model for calculating the magnetic moment of inertia based on the torque-torque correlation model. Particularly, the method has been applied to bulk itinerant magnets and we show that numerical values are comparable with recent experimental measurements. The theoretical analysis shows that even though the moment of inertia and damping are produced by the spin-orbit coupling, and the expression for them have common features, they are caused by very different electronic structure mechanisms. We propose ways to utilise this in order to tune the inertia experimentally, and to find materials with significant inertia dynamics.
Wan, J.; Cahay, M.; Bandyopadhyay, S.
2008-06-01
We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.
Spin-neurons: A possible path to energy-efficient neuromorphic computers
Energy Technology Data Exchange (ETDEWEB)
Sharad, Mrigank; Fan, Deliang; Roy, Kaushik [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
2013-12-21
Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing hardware, computing-devices beyond CMOS may need to be explored. The suitability of such devices to this field of computing would strongly depend upon how closely their physical characteristics match with the essential computing primitives employed in such models. In this work, we discuss the rationale of applying emerging spin-torque devices for bio-inspired computing. Recent spin-torque experiments have shown the path to low-current, low-voltage, and high-speed magnetization switching in nano-scale magnetic devices. Such magneto-metallic, current-mode spin-torque switches can mimic the analog summing and “thresholding” operation of an artificial neuron with high energy-efficiency. Comparison with CMOS-based analog circuit-model of a neuron shows that “spin-neurons” (spin based circuit model of neurons) can achieve more than two orders of magnitude lower energy and beyond three orders of magnitude reduction in energy-delay product. The application of spin-neurons can therefore be an attractive option for neuromorphic computers of future.
International Nuclear Information System (INIS)
Aegerter, C.M.; Hofer, J.; Savic, I.M.; Keller, H.; Lee, S.L.; Ager, C.; Lloyd, S.H.; Forgan, E.M.
1998-01-01
Using the techniques of muon spin rotation and torque magnetometry, we investigate the crossover field B cr in Bi 2.15 Sr 1.85 Ca 1 Cu 2 O 8+δ at which the vortex lattice becomes disordered along the field direction. It is found that B cr scales as the projection of the applied field along the perpendicular to the superconducting planes. This has the implication that a field large enough to give a disordered lattice when applied perpendicular to the planes, can give a well-ordered vortex-line lattice for angles of the field to the c axis greater than a critical value. copyright 1998 The American Physical Society
Topological Material-Based Spin Devices
Zhang, Minhao; Wang, Xuefeng
Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.
Spin-wave thermal population as temperature probe in magnetic tunnel junctions
Energy Technology Data Exchange (ETDEWEB)
Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)
2016-07-14
We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.
Magnetic proximity control of spin currents and giant spin accumulation in graphene
Singh, Simranjeet
Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.
Energy Technology Data Exchange (ETDEWEB)
Ghosh, Bahniman, E-mail: bghosh@utexas.edu; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Road, Bldg. 160, Austin, Texas 78758 (United States)
2016-07-21
In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.
International Nuclear Information System (INIS)
Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.
2016-01-01
In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.
Excitable particles in an optical torque wrench
Pedaci, Francesco; Huang, Zhuangxiong; van Oene, Maarten; Barland, Stephane; Dekker, Nynke H.
2011-03-01
The optical torque wrench is a laser trapping technique capable of applying and directly measuring torque on microscopic birefringent particles using spin momentum transfer, and has found application in the measurement of static torsional properties of biological molecules such as single DNAs. Motivated by the potential of the optical torque wrench to access the fast rotational dynamics of biological systems, a result of its all-optical manipulation and detection, we focus on the angular dynamics of the trapped birefringent particle, demonstrating its excitability in the vicinity of a critical point. This links the optical torque wrench to nonlinear dynamical systems such as neuronal and cardiovascular tissues, nonlinear optics and chemical reactions, all of which display an excitable binary (`all-or-none') response to input perturbations. On the basis of this dynamical feature, we devise and implement a conceptually new sensing technique capable of detecting single perturbation events with high signal-to-noise ratio and continuously adjustable sensitivity.
Photo-Induced Spin State Switching In [Fe(bpp)2](NCS)2·2H2O
International Nuclear Information System (INIS)
Bhattacharjee, Ashis; Goodwin, Harry A.; Guetlich, Philipp
2010-01-01
We present the results of our investigation into the effect of irradiation of green light on the high spin low spin transition behavior of the mononuclear iron(II) compound [Fe(bpp) 2 ](NCS) 2 ·2H 2 O explored with the help of magnetic as well as Moessbauer spectroscopic studies. It has been found that the compound exhibits molecular bistability under irradiation of light due to LIESST effect.
High torque DC motor fabrication and test program
Makus, P.
1976-01-01
The testing of a standard iron and standard alnico permanent magnet two-phase, brushless dc spin motor for potential application to the space telescope has been concluded. The purpose of this study was to determine spin motor power losses, magnetic drag, efficiency and torque speed characteristics of a high torque dc motor. The motor was designed and built to fit an existing reaction wheel as a test vehicle and to use existing brass-board commutation and torque command electronics. The results of the tests are included in this report.
Manipulating the spin states in a double molecular magnets tunneling junction
Energy Technology Data Exchange (ETDEWEB)
Jiang, Liang; Liu, Xi [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Zhengzhong, E-mail: zeikeezhang@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123 (China); Wang, Ruiqiang [Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006 (China)
2014-01-17
We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology and has potential applications in molecular spintronics or quantum information processing.
Manipulating the spin states in a double molecular magnets tunneling junction
Jiang, Liang; Liu, Xi; Zhang, Zhengzhong; Wang, Ruiqiang
2014-01-01
We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology [6] and has potential applications in molecular spintronics or quantum information processing.
Current-driven thermo-magnetic switching in magnetic tunnel junctions
Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.
2017-12-01
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.
Magnetic Nanostructures Spin Dynamics and Spin Transport
Farle, Michael
2013-01-01
Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.
Spin-orbitronics: A new moment for Berry
Manchon, Aurelien
2014-01-01
The standard description of spin-orbit torques neglects geometric phase effects. But recent experiments suggest that the Berry curvature gives rise to an anti-damping torque in systems with broken inversion symmetry.
Spin-orbitronics: A new moment for Berry
Manchon, Aurelien
2014-04-13
The standard description of spin-orbit torques neglects geometric phase effects. But recent experiments suggest that the Berry curvature gives rise to an anti-damping torque in systems with broken inversion symmetry.
Spin injection, transport, and read/write operation in spin-based MOSFET
International Nuclear Information System (INIS)
Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi
2011-01-01
We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.
Angular Acceleration without Torque?
Kaufman, Richard D.
2012-01-01
Hardly. Just as Robert Johns qualitatively describes angular acceleration by an internal force in his article "Acceleration Without Force?" here we will extend the discussion to consider angular acceleration by an internal torque. As we will see, this internal torque is due to an internal force acting at a distance from an instantaneous center.
Spin physics in semiconductors
2017-01-01
This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.
Energy Technology Data Exchange (ETDEWEB)
Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)
2016-01-04
We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.
Energy Technology Data Exchange (ETDEWEB)
Kyyrae, J. [Helsinki University of Technology, Institute of Intelligent Power Electronics, Espoo (Finland)
1997-12-31
Voltage- and current-sourced dc-ac converters operating in quasi-square area are compared. Their characteristics are calculated with switching vector, which is space-vector of switching functions. When the load is an asynchronous motor various analytical equations, including torque, are calculated efficiently. Motor current and torque approximations are compared with the simulated ones. (orig.) 6 refs.
Intrinsic nonadiabatic topological torque in magnetic skyrmions and vortices
Akosa, Collins Ashu; Ndiaye, Papa Birame; Manchon, Aurelien
2017-01-01
We propose that topological spin currents flowing in topologically nontrivial magnetic textures, such as magnetic skyrmions and vortices, produce an intrinsic nonadiabatic torque of the form Tt∼[(∂xm×∂ym)·m]∂ym. We show that this torque, which is absent in one-dimensional domain walls and/or nontopological textures, is responsible for the enhanced nonadiabaticity parameter observed in magnetic vortices compared to one-dimensional textures. The impact of this torque on the motion of magnetic skyrmions is expected to be crucial, especially to determine their robustness against defects and pinning centers.
Intrinsic nonadiabatic topological torque in magnetic skyrmions and vortices
Akosa, Collins Ashu
2017-03-01
We propose that topological spin currents flowing in topologically nontrivial magnetic textures, such as magnetic skyrmions and vortices, produce an intrinsic nonadiabatic torque of the form Tt∼[(∂xm×∂ym)·m]∂ym. We show that this torque, which is absent in one-dimensional domain walls and/or nontopological textures, is responsible for the enhanced nonadiabaticity parameter observed in magnetic vortices compared to one-dimensional textures. The impact of this torque on the motion of magnetic skyrmions is expected to be crucial, especially to determine their robustness against defects and pinning centers.
Gravitational torque frequency analysis for the Einstein elevator experiment
Energy Technology Data Exchange (ETDEWEB)
Ashenberg, Joshua [Harvard-Smithsonian Center for Astrophysics (CfA), Cambridge, MA (United States); Lorenzini, Enrico C [University of Padova, Padua (Italy)
2007-09-07
Testing the principle of equivalence with a differential acceleration detector that spins while free falling requires a reliable extraction of a very small violation signal from the noise in the output signal frequency spectrum. The experiment is designed such that the violation signal is modulated by the spin of the test bodies. The possible violation signal is mixed with the intrinsic white noise of the detector and the colored noise associated with the modulation of gravitational perturbations, through the spin, and inertial-motion-related noise. In order to avoid false alarms the frequencies of the gravitational disturbances and the violation signal must be separate. This paper presents a model for the perturbative gravitational torque that affects the measurement. The torque is expanded in an asymptotic series to the fourth order and then expressed as a frequency spectrum. A spectral analysis shows the design conditions for frequency separation between the perturbing torque and the violation signal.
Energy efficient hybrid computing systems using spin devices
Sharad, Mrigank
Emerging spin-devices like magnetic tunnel junctions (MTJ's), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ˜20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode' processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ˜100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters.
Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
Directory of Open Access Journals (Sweden)
X. G. Li
2016-01-01
Full Text Available As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.
Wyk, van J.D.
1970-01-01
It is indicated that, by changing the electronic switching mode of the rotor current of an induction machine, it is possible to operate the machine at improved (capacitive) power factors and increased torque, or conversely at lower effective current and capacitive power factors at rated torque.
Accuracy of dental torque wrenches.
Wood, James S; Marlow, Nicole M; Cayouette, Monica J
2015-01-01
The aim of this in vitro study was to compare the actual torque of 2 manual wrench systems to their stated (target) torque. New spring- (Nobel Biocare USA, LLC) and friction-style (Zimmer Dental, Inc.) manual dental torque wrenches, as well as spring torque wrenches that had undergone sterilization and clinical use, were tested. A calibrated torque gauge was used to compare actual torque to target torque values of 15 and 35 N/cm. Data were statistically analyzed via mixed-effects regression model with Bonferroni correction. At a target torque of 15 N/cm, the mean torque of new spring wrenches (13.97 N/cm; SE, 0.07 N/cm) was significantly different from that of used spring wrenches (14.94 N/cm; SE, 0.06 N/cm; P torques of new spring and new friction wrenches (14.10 N/cm; SE, 0.07 N/cm; P = 0.21) were not significantly different. For torque measurements calibrated at 35 N/cm, the mean torque of new spring wrenches (35.29 N/cm; SE, 0.10 N/cm) was significantly different (P torque could impact the clinical success of screw-retained dental implants. It is recommended that torque wrenches be checked regularly to ensure that they are performing to target values.
Spin motive forces, 'measurements', and spin-valves
International Nuclear Information System (INIS)
Barnes, S.E.
2007-01-01
Discussed is the spin motive force (smf) produced by a spin valve, this reflecting its dynamics. Relaxation implies an implicit measurement of the magnetization of the free layer of a valve. It is shown this has implications for the angular dependence of the torque transfer. Some discussion of recent experiments is included
Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration
The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.
EMG-Torque Dynamics Change With Contraction Bandwidth.
Golkar, Mahsa A; Jalaleddini, Kian; Kearney, Robert E
2018-04-01
An accurate model for ElectroMyoGram (EMG)-torque dynamics has many uses. One of its applications which has gained high attention among researchers is its use, in estimating the muscle contraction level for the efficient control of prosthesis. In this paper, the dynamic relationship between the surface EMG and torque during isometric contractions at the human ankle was studied using system identification techniques. Subjects voluntarily modulated their ankle torque in dorsiflexion direction, by activating their tibialis anterior muscle, while tracking a pseudo-random binary sequence in a torque matching task. The effects of contraction bandwidth, described by torque spectrum, on EMG-torque dynamics were evaluated by varying the visual command switching time. Nonparametric impulse response functions (IRF) were estimated between the processed surface EMG and torque. It was demonstrated that: 1) at low contraction bandwidths, the identified IRFs had unphysiological anticipatory (i.e., non-causal) components, whose amplitude decreased as the contraction bandwidth increased. We hypothesized that this non-causal behavior arose, because the EMG input contained a component due to feedback from the output torque, i.e., it was recorded from within a closed-loop. Vision was not the feedback source since the non-causal behavior persisted when visual feedback was removed. Repeating the identification using a nonparametric closed-loop identification algorithm yielded causal IRFs at all bandwidths, supporting this hypothesis. 2) EMG-torque dynamics became faster and the bandwidth of system increased as contraction modulation rate increased. Thus, accurate prediction of torque from EMG signals must take into account the contraction bandwidth sensitivity of this system.
Large Torque Variations in Two Soft Gamma Repeaters
Woods, P.M.; Kouveliotou, C.; Göğüş, E.; Finger, M.H.; Swank, J.; Markwardt, C.B.; Hurley, K.; van der Klis, M.
2002-01-01
We have monitored the pulse frequencies of the two soft gamma repeaters SGR 1806-20 and SGR 1900+14 through the beginning of year 2001 using primarily Rossi X-Ray Timing Explorer Proportional Counter Array observations. In both sources, we observe large changes in the spin-down torque up to a factor
Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou
2017-07-01
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.
Load Torque Compensator for Model Predictive Direct Current Control in High Power PMSM Drive Systems
DEFF Research Database (Denmark)
Preindl, Matthias; Schaltz, Erik
2011-01-01
The widely used cascade speed and torque controllers have a limited control performance in most high power applications due to the low switching frequency of power electronic converters and the convenience to avoid speed overshoots and oscillations for lifetime considerations. Model Predictive...... Direct Current Control (MPDCC) leads to an increase of torque control performance taking into account the discrete nature of inverters but temporary offsets and poor responses to load torque variations are still issues in speed control. A load torque estimator is proposed in this paper in order...
Induction machine Direct Torque Control system based on fuzzy adaptive control
Li, Shi-ping; Yu, Yan; Jiao, Zhen-gang; Gu, Shu-sheng
2009-07-01
Direct Torque Control technology is a high-performance communication control method, it uses the space voltage vector method, and then to the inverter switch state control, to obtain high torque dynamic performance. But none of the switching states is able to generate the exact voltage vector to produce the desired changes in torque and flux in most of the switching instances. This causes a high ripple in torque. To solve this problem, a fuzzy implementation of Direct Torque Control of Induction machine is presented here. Error of stator flux, error of motor electromagnetic torque and position of angle of flux are taken as fuzzy variables. In order to further solve nonlinear problem of variation parameters in direct torque control system, the paper proposes a fuzzy parameter PID adaptive control method which is suitable for the direct torque control of an asynchronous motor. The generation of its fuzzy control is obtained by analyzing and optimizing PID control step response and combining expert's experience. For this reason, it carries out fuzzy work to PID regulator of motor speed to achieve to regulate PID parameters. Therefore the control system gets swifter response velocity, stronger robustness and higher precision of velocity control. The computer simulated results verify the validity of this novel method.
Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization
International Nuclear Information System (INIS)
Surawanitkun, C.; Kaewrawang, A.; Siritaratiwat, A.; Kruesubthaworn, A.; Sivaratana, R.; Jutong, N.; Mewes, C.K.A.; Mewes, T.
2015-01-01
For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important factors that have to be considered simultaneously. In this article, we examined the minimum energy for STT induced magnetization switching in MTJ devices for different in-plane angles of the magnetization in the free layer and the pinned layer with respect to the major axis of the elliptical cylinder of the cell. Simulations were performed by comparing the analytical solution with macrospin and full micromagnetic calculations. The results show good agreement of the switching energy calculated by using the three approaches for different initial angles of the magnetization of the free layer. Also, the low-energy location specifies the suitable value of both time and current in order to reduce the heat effect during the switching process. - Highlights: • Switching energy model was firstly examined with tiled magnetization in STT-RAM. • Simulation was performed by analytical solution, macrospin and micromagnetic models. • Low energy results from three models show agreement for tilt angle in free layer. • We also found an optimal tilt angle of the pinned layer. • Low-energy location specifies the suitable switching location to reduce heat effect
Spin rotation after a spin-independent scattering. Spin properties of an electron gas in a solid
International Nuclear Information System (INIS)
Zayets, V.
2014-01-01
It is shown that spin direction of an electron may not be conserved after a spin-independent scattering. The spin rotations occur due to a quantum-mechanical fact that when a quantum state is occupied by two electrons of opposite spins, the total spin of the state is zero and the spin direction of each electron cannot be determined. It is shown that it is possible to divide all conduction electrons into two group distinguished by their time-reversal symmetry. In the first group the electron spins are all directed in one direction. In the second group there are electrons of all spin directions. The number of electrons in each group is conserved after a spin-independent scattering. This makes it convenient to use these groups for the description of the magnetic properties of conduction electrons. The energy distribution of spins, the Pauli paramagnetism and the spin distribution in the ferromagnetic metals are described within the presented model. The effects of spin torque and spin-torque current are described. The origin of spin-transfer torque is explained within the presented model
Butterfly valve torque prediction methodology
International Nuclear Information System (INIS)
Eldiwany, B.H.; Sharma, V.; Kalsi, M.S.; Wolfe, K.
1994-01-01
As part of the Motor-Operated Valve (MOV) Performance Prediction Program, the Electric Power Research Institute has sponsored the development of methodologies for predicting thrust and torque requirements of gate, globe, and butterfly MOVs. This paper presents the methodology that will be used by utilities to calculate the dynamic torque requirements for butterfly valves. The total dynamic torque at any disc position is the sum of the hydrodynamic torque, bearing torque (which is induced by the hydrodynamic force), as well as other small torque components (such as packing torque). The hydrodynamic torque on the valve disc, caused by the fluid flow through the valve, depends on the disc angle, flow velocity, upstream flow disturbances, disc shape, and the disc aspect ratio. The butterfly valve model provides sets of nondimensional flow and torque coefficients that can be used to predict flow rate and hydrodynamic torque throughout the disc stroke and to calculate the required actuation torque and the maximum transmitted torque throughout the opening and closing stroke. The scope of the model includes symmetric and nonsymmetric discs of different shapes and aspects ratios in compressible and incompressible fluid applications under both choked and nonchoked flow conditions. The model features were validated against test data from a comprehensive flowloop and in situ test program. These tests were designed to systematically address the effect of the following parameters on the required torque: valve size, disc shapes and disc aspect ratios, upstream elbow orientation and its proximity, and flow conditions. The applicability of the nondimensional coefficients to valves of different sizes was validated by performing tests on 42-in. valve and a precisely scaled 6-in. model. The butterfly valve model torque predictions were found to bound test data from the flow-loop and in situ testing, as shown in the examples provided in this paper
Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector
Kuszewski, P.; Camara, I. S.; Biarrotte, N.; Becerra, L.; von Bardeleben, J.; Savero Torres, W.; Lemaître, A.; Gourdon, C.; Duquesne, J.-Y.; Thevenard, L.
2018-06-01
We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The reversed domains are in both geometries several hundreds of , much larger than has been shown using spin transfer torque- or field-driven precessional switching. We show that surface acoustic waves can travel at least 1 mm before addressing a given area, and can interfere to create magnetic stripes that can be positioned with a sub-micronic precision.
Observation of the Spin Peltier Effect for Magnetic Insulators
Flipse, J.; Dejene, F.K.; Wagenaar, D.; Bauer, G.E.W.; Ben Youssef, J.; Van Wees, B.J.
2014-01-01
We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin
Electromechanical magnetization switching
Energy Technology Data Exchange (ETDEWEB)
Chudnovsky, Eugene M. [Department of Physics and Astronomy, Lehman College and Graduate School, The City University of New York, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Jaafar, Reem [Department of Mathematics, Engineering and Computer Science, LaGuardia Community College, The City University of New York, 31-10 Thomson Avenue, Long Island City, New York 11101 (United States)
2015-03-14
We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.
Electromechanical magnetization switching
International Nuclear Information System (INIS)
Chudnovsky, Eugene M.; Jaafar, Reem
2015-01-01
We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained
A New Low-Cost Hybrid Switched Reluctance Motor for Adjustable-Speed Pump Applications
DEFF Research Database (Denmark)
Lu, Kaiyuan; Rasmussen, Peter Omand; Watkins, Steve
2011-01-01
with conventional single-phase switched reluctance motors, it has an increased torque density. The cogging torque is beneficially used in this motor for reducing the torque ripple. It is demonstrated that such a motor drive system can be a suitable candidate to advantageously compete with the existing motor drive...
International Nuclear Information System (INIS)
Kawamoto, Tohru; Abe, Shuji
2005-01-01
We investigated the switching behavior of small particles of an Ising-like model under constant excitation by means of Monte Carlo simulations to study photoinduced spinstate switching in nanoparticles of transition metal complexes. The threshold intensity required for that switching becomes drastically small in small particles with diameter of less than 10 pseudospins. This lower intensity results enhancement of the pseudospin fluctuation at the surface in the small particles. Our result might originate the increase of the photoinduced magnetization in nanoparticles of a Mo-Cu cyanide
Directory of Open Access Journals (Sweden)
Wei Ye
2018-05-01
Full Text Available In this paper, by evaluating the extreme value of the qth-power current, a torque sharing function (TSF family for reducing the torque ripples in the switched reluctance motor (SRM is proposed. The optimization criteria of the TSF has two secondary objectives, including the maximization of the torque-speed range and the minimization of copper loss. The evaluation indices in terms of the peak phase current, the rms (root mean square phase current, and the torque ripple factor are compared between the proposed TSF family and four conventional TSFs including linear, sinusoidal, exponential, and cubic TSFs. An optimization objective function that combines the maximum absolute value of the rate-of-change of the flux linkage (MAV-RCFL and the qth-power of current is proposed and a weighting factor is used to balance the influence of the two optimization objectives. An optimal TSF can be easily obtained by solving the optimization problem from the TSF family. The proposed TSF is validated by using simulations and experiments with a three-phase 6/4 SRM with 7.5 kW, 3000 rpm, and 270 V DC-link voltage. The dynamic simulation model is implemented in Matlab/Simulink. The results demonstrate the validity and superiority of the proposed control method; the optimal TSF provides better torque-speed performance, and a better reduction in copper loss and torque ripples at high speed, as compared to conventional TSFs.
Development and analysis of U-core switched reluctance machine
DEFF Research Database (Denmark)
Jæger, Rasmus; Nielsen, Simon Staal; Rasmussen, Peter Omand
2016-01-01
Switched reluctance machines (SRMs) have seen a lot of interest due to their rugged and fault tolerant construction as well as their high efficiency over a wide speed range. The technology however suffers from torque ripple, acoustic noise and low torque density. Many concepts to address these di......Switched reluctance machines (SRMs) have seen a lot of interest due to their rugged and fault tolerant construction as well as their high efficiency over a wide speed range. The technology however suffers from torque ripple, acoustic noise and low torque density. Many concepts to address...... and reduced flux reversal, reducing core losses. Due to an increased number of poles, torque density is increased and torque ripple reduced. A prototype is built and through a number of tests, the machine is mapped and all loss components are analysed. As a result of the analysis, an assessment is presented...
Imaging Spin Dynamics on the Nanoscale using X-Ray Microscopy
Directory of Open Access Journals (Sweden)
Hermann eStoll
2015-04-01
Full Text Available The dynamics of emergent magnetic quasiparticles, such as vortices, domain walls, and bubbles are studied by scanning transmission x-ray microscopy (STXM, combining magnetic (XMCD contrast with about 25 nm lateral resolution as well as 70 ps time resolution. Essential progress in the understanding of magnetic vortex dynamics is achieved by vortex core reversal observed by sub-GHz excitation of the vortex gyromode, either by ac magnetic fields or spin transfer torque. The basic switching scheme for this vortex core reversal is the generation of a vortex-antivortex pair. Much faster vortex core reversal is obtained by exciting azimuthal spin wave modes with (multi-GHz rotating magnetic fields or orthogonal monopolar field pulses in x and y direction, down to 45 ps in duration. In that way unidirectional vortex core reversal to the vortex core 'down' or 'up' state only can be achieved with switching times well below 100 ps. Coupled modes of interacting vortices mimic crystal properties. The individual vortex oscillators determine the properties of the ensemble, where the gyrotropic mode represents the fundamental excitation. By self-organized state formation we investigate distinct vortex core polarization configurations and understand these eigenmodes in an extended Thiele model. Analogies with photonic crystals are drawn. Oersted fields and spin-polarized currents are used to excite the dynamics of domain walls and magnetic bubbles. From the measured phase and amplitude of the displacement of domain walls we deduce the size of the non-adiabatic spin-transfer torque. For sensing applications, the displacement of domain walls is studied and a direct correlation between domain wall velocity and spin structure is found. Finally the synchronous displacement of multiple domain walls using perpendicular field pulses is demonstrated as a possible paradigm shift for magnetic memory and logic applications.
Torres del Castillo, G.F; Méndez Garrido, A
2006-01-01
Making use of the fact that a 2l-pole can be represented by means of l vectors of the same magnitude, the torque on a quadrupole in an inhomogeneous external field is expressed in terms of the vectors that represent the quadrupole and the gradient of the external field. The conditions for rotational equilibrium are also expressed in terms of these vectors. Haciendo uso de que un multipolo de orden 2l puede representarse mediante l vectores de la misma magnitud, la torca sobre un cuadripolo...
Momentum confinement at low torque
Energy Technology Data Exchange (ETDEWEB)
Solomon, W M [Princeton Plasma Physics Laboratory, Princeton University, Princeton, NJ 08543 (United States); Burrell, K H [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); De Grassie, J S [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); Budny, R [Princeton Plasma Physics Laboratory, Princeton University, Princeton, NJ 08543 (United States); Groebner, R J [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); Kinsey, J E [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); Kramer, G J [Princeton Plasma Physics Laboratory, Princeton University, Princeton, NJ 08543 (United States); Luce, T C [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); Makowski, M A [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Mikkelsen, D [Princeton Plasma Physics Laboratory, Princeton University, Princeton, NJ 08543 (United States); Nazikian, R [Princeton Plasma Physics Laboratory, Princeton University, Princeton, NJ 08543 (United States); Petty, C C [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); Politzer, P A [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); Scott, S D [Princeton Plasma Physics Laboratory, Princeton University, Princeton, NJ 08543 (United States); Zeeland, M A Van [General Atomics, PO Box 85608, San Diego, CA 92186-5608 (United States); Zarnstorff, M C [Princeton Plasma Physics Laboratory, Princeton University, Princeton, NJ 08543 (United States)
2007-12-15
Momentum confinement was investigated on DIII-D as a function of applied neutral beam torque at constant normalized beta {beta}{sub N}, by varying the mix of co (parallel to the plasma current) and counter neutral beams. Under balanced neutral beam injection (i.e. zero total torque to the plasma), the plasma maintains a significant rotation in the co-direction. This 'intrinsic' rotation can be modeled as being due to an offset in the applied torque (i.e. an 'anomalous torque'). This anomalous torque appears to have a magnitude comparable to one co neutral beam source. The presence of such an anomalous torque source must be taken into account to obtain meaningful quantities describing momentum transport, such as the global momentum confinement time and local diffusivities. Studies of the mechanical angular momentum in ELMing H-mode plasmas with elevated q{sub min} show that the momentum confinement time improves as the torque is reduced. In hybrid plasmas, the opposite effect is observed, namely that momentum confinement improves at high torque/rotation. GLF23 modeling suggests that the role of E x B shearing is quite different between the two plasmas, which may help to explain the different dependence of the momentum confinement on torque.
Energy Technology Data Exchange (ETDEWEB)
Mundt, Mark Osroe [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Martinez, Matthew Ronald [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Varela, Jeanette Judith [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Anderson-Cook, Christine Michaela [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gilmore, Walter E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Williams, Allie [Pantex Plant (PTX), Amarillo, TX (United States)
2018-01-11
At the Pantex Plant in Amarillo, TX, Production Technicians (PTs) build and disassemble nuclear weapon systems. The weapons are held in an integrated work stand for stability and to increase the safety environment for the workers and for the materials being processed. There are many occasions in which a knob must be turned to tighten an assembly part. This can help to secure or manipulate pieces of the system. As there are so many knobs to turn, the instructions given to the PTs are to twist the knob to a hand-tight setting, without the aid of a torque wrench. There are inherent risks in this procedure as the knobs can be tightened too loosely such that the apparatus falls apart or too tightly such that the force can crush or pinch components in the system that contain energetic materials. We want to study these operations at Pantex. Our goal is to collect torque data to assess the safety and reliability of humantooling interfaces.
ESTIMATION OF GRASPING TORQUE USING ROBUST REACTION TORQUE OBSERVER FOR ROBOTIC FORCEPS
塚本, 祐介
2015-01-01
Abstract— In this paper, the estimation of the grasping torque of robotic forceps without the use of a force/torque sensor is discussed. To estimate the grasping torque when the robotic forceps driven by a rotary motor with a reduction gear grasps an object, a novel robust reaction torque observer is proposed. In the case where a conventional reaction force/torque observer is applied, the estimated torque includes not only the grasping torque, namely the reaction torque, but also t...
Magnetic Field and Torque Output of Packaged Hydraulic Torque Motor
Directory of Open Access Journals (Sweden)
Liang Yan
2018-01-01
Full Text Available Hydraulic torque motors are one key component in electro-hydraulic servo valves that convert the electrical signal into mechanical motions. The systematic characteristics analysis of the hydraulic torque motor has not been found in the previous research, including the distribution of the electromagnetic field and torque output, and particularly the relationship between them. In addition, conventional studies of hydraulic torque motors generally assume an evenly distributed magnetic flux field and ignore the influence of special mechanical geometry in the air gaps, which may compromise the accuracy of analyzing the result and the high-precision motion control performance. Therefore, the objective of this study is to conduct a detailed analysis of the distribution of the magnetic field and torque output; the influence of limiting holes in the air gaps is considered to improve the accuracy of both numerical computation and analytical modeling. The structure and working principle of the torque motor are presented first. The magnetic field distribution in the air gaps and the magnetic saturation in the iron blocks are analyzed by using a numerical approach. Subsequently, the torque generation with respect to the current input and assembly errors is analyzed in detail. This shows that the influence of limiting holes on the magnetic field is consistent with that on torque generation. Following this, a novel modified equivalent magnetic circuit is proposed to formulate the torque output of the hydraulic torque motor analytically. The comparison among the modified equivalent magnetic circuit, the conventional modeling approach and the numerical computation is conducted, and it is found that the proposed method helps to improve the modeling accuracy by taking into account the effect of special geometry inside the air gaps.
Torque control for electric motors
Bernard, C. A.
1980-01-01
Method for adjusting electric-motor torque output to accomodate various loads utilizes phase-lock loop to control relay connected to starting circuit. As load is imposed, motor slows down, and phase lock is lost. Phase-lock signal triggers relay to power starting coil and generate additional torque. Once phase lock is recoverd, relay restores starting circuit to its normal operating mode.
Momentum Confinement at Low Torque
International Nuclear Information System (INIS)
Solomon, W.M.; Burrell, K.H.; deGrassie, J.S.; Budny, R.; Groebner, R.J.; Heidbrink, W.W.; Kinsey, J.E.; Kramer, G.J.; Makowski, M.A.; Mikkelsen, D.; Nazikian, R.; Petty, C.C.; Politzer, P.A.; Scott, S.D.; Van Zeeland, M.A.; Zarnstorff, M.C.
2007-01-01
Momentum confinement was investigated on DIII-D as a function of applied neutral beam torque at constant normalized β N , by varying the mix of co (parallel to the plasma current) and counter neutral beams. Under balanced neutral beam injection (i.e. zero total torque to the plasma), the plasma maintains a significant rotation in the co-direction. This 'intrinsic' rotation can be modeled as being due to an offset in the applied torque (i.e. an 'anomalous torque'). This anomalous torque appears to have a magnitude comparable to one co-neutral beam source. The presence of such an anomalous torque source must be taken into account to obtain meaningful quantities describing momentum transport, such as the global momentum confinement time and local diffusivities. Studies of the mechanical angular momentum in ELMing H-mode plasmas with elevated q min show that the momentum confinement time improves as the torque is reduced. In hybrid plasmas, the opposite effect is observed, namely that momentum confinement improves at high torque/rotation. The relative importance of E x B shearing between the two is modeled using GLF23 and may suggest a possible explanation.
Hybrid synchronous motor electromagnetic torque research
Directory of Open Access Journals (Sweden)
Suvorkova Elena E.
2014-01-01
Full Text Available Electromagnetic field distribution models in reluctance and permanent magnet parts were made by means of Elcut. Dependences of electromagnetic torque on torque angle were obtained.
Directory of Open Access Journals (Sweden)
Shizhu Qiao
2018-05-01
Full Text Available Bloch–Bloembergen–Slonczewski (BBS equation is established by extending Bloch–Bloembergen equation, and it is used to study magnetization oscillation in the free magnetic layer of a magnetic tunneling junction. Since both short–wavelength magnon excitation and spin–transfer torque are taken into account in the BBS equation, it is distinguished from Landau–Lifshitz–Gilbert–Slonczewski equation. The macro–spin BBS model predicts that the transverse relaxation time in free magnetic layer should be long enough, as compared with the longitudinal relaxation time, to achieve stable magnetization oscillation for spin–transfer torque oscillator application. Moreover, field–like torque favors the tolerance of fast transverse relaxation, which makes magnetic tunneling junction a better choice than spin valve for the spin–transfer torque oscillator application.
Zero Secular Torque on Asteroids from Impinging Solar Photons in the YORP Effect: A Simple Proof
Rubincam, David Perry; Paddack, Stephen J.
2010-01-01
YORP torques, where "YORP" stands for "Yarokovsky-O'Keefe-Radzievskii-Paddack." arise mainly from sun light reflected off a Solar System object and the infrared radiation emi tted by it. We show here, through the most elementary demonstration that we Can devise, that secular torques from impinging solar photons are generally negligible and thus cause little secular evolution of an asteroid's obliquity or spin rate.
Nonambipolarity, orthogonal conductivity, poloidal flow, and torque
International Nuclear Information System (INIS)
Hulbert, G.W.; Perkins, F.W.
1989-02-01
Nonambipolar processes, such as neutral injection onto trapped orbits or ripple-diffusion loss of α-particles, act to charge a plasma. A current j/sub r/ across magnetic surfaces must arise in the bulk plasma to maintain charge neutrality. An axisymmetric, neoclassical model of the bulk plasma shows that these currents are carried by the ions and exert a j/sub r/B/sub θ/R/c torque in the toroidal direction. A driven poloidal flow V/sub θ/ = E/sub r/'c/B must also develop. The average current density is related to the radial electric field E/sub r/' = E/sub r/ + v/sub /phi//B/sub θ//c in a frame moving with the plasma via the orthogonal conductivity = σ/sub /perpendicular//E/sub r/', which has the value σ/sub /perpendicular// = (1.65ε/sup 1/2/)(ne 2 ν/sub ii//MΩ/sub θ/ 2 ) in the banana regime. If an ignited plasma loses an appreciable fraction Δ of its thermonuclear α-particles by banana ripple diffusion, then the torque will spin the plasma to sonic rotation in a time /tau//sub s/ ∼ 2/tau//sub E//Δ, /tau//sub E/ being the energy confinement time. 10 refs., 1 fig
Luft, Peter A [El Cerrito, CA
2009-05-12
A coupling for mechanically connecting modular tubular struts of a positioning apparatus or space frame, comprising a pair of toothed rings (10, 12) attached to separate strut members (16), the teeth (18, 20) of the primary rings (10, 12) mechanically interlocking in both an axial and circumferential manner, and a third part comprising a sliding, toothed collar (14) the teeth (22) of which interlock the teeth (18, 20) of the primary rings (10, 12), preventing them from disengaging, and completely locking the assembly together. A secondary mechanism provides a nesting force for the collar, and/or retains it. The coupling is self-contained and requires no external tools for installation, and can be assembled with gloved hands in demanding environments. No gauging or measured torque is required for assembly. The assembly can easily be visually inspected to determine a "go" or "no-go" status. The coupling is compact and relatively light-weight. Because of it's triply interlocking teeth, the connection is rigid. The connection does not primarily rely on clamps, springs or friction based fasteners, and is therefore reliable in fail-safe applications.
Thermomagnetic torques in polyatomic gases
Hildebrandt, A. F.; Wood, C. T.
1972-01-01
The application of the Scott effect to the dynamics of galactic and stellar rotation is investigated. Efforts were also made to improve the sensitivity and stability of torque measurements and understand the microscopic mechanism that causes the Scott effect.
New concept of direct torque neuro-fuzzy control for induction motor drives. Simulation study
Energy Technology Data Exchange (ETDEWEB)
Grabowski, P.Z. [Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw (Poland)
1997-12-31
This paper presents a new control strategy in the discrete Direct Torque Control (DTC) based on neuro-fuzzy structure. Two schemes are proposed: neuro-fuzzy switching times calculator and neuro-fuzzy incremental controller with space vector modulator. These control strategies guarantee very good dynamic and steady-states characteristics, with very low sampling time and constant switching frequency. The proposed techniques are verified by simulation study of the whole drive system and results are compared with conventional discrete Direct Torque Control method. (orig.) 18 refs.
14 CFR 27.361 - Engine torque.
2010-01-01
... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Engine torque. 27.361 Section 27.361... STANDARDS: NORMAL CATEGORY ROTORCRAFT Strength Requirements Flight Loads § 27.361 Engine torque. (a) For turbine engines, the limit torque may not be less than the highest of— (1) The mean torque for maximum...
40 CFR 1065.310 - Torque calibration.
2010-07-01
... 40 Protection of Environment 32 2010-07-01 2010-07-01 false Torque calibration. 1065.310 Section... Conditions § 1065.310 Torque calibration. (a) Scope and frequency. Calibrate all torque-measurement systems including dynamometer torque measurement transducers and systems upon initial installation and after major...
Giant spin Hall angle from topological insulator BixSe(1 - x) thin films
Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping
Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.
Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping
2018-01-09
The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.
Adaptive Engine Torque Compensation with Driveline Model
Directory of Open Access Journals (Sweden)
Park Jinrak
2018-01-01
Full Text Available Engine net torque is the total torque generated by the engine side, and includes the fuel combustion torque, the friction torque, and additionally the starter motor torque in case of hybrid vehicles. The engine net torque is utilized to control powertrain items such as the engine itself, the transmission clutch, also the engine clutch, and it must be accurate for the precise powertrain control. However, this net torque can vary with the engine operating conditions like the engine wear, the changes of the atmospheric pressure and the friction torque. Thus, this paper proposes the adaptive engine net torque compensator using driveline model which can cope with the net torque change according to engine operating conditions. The adaptive compensator was applied on the parallel hybrid vehicle and investigated via MATLAB Simcape Driveline simulation.
Spin Transport in Ferromagnetic and Antiferromagnetic Textures
Akosa, Collins A.
2016-12-07
In this dissertation, we provide an accurate description of spin transport in magnetic textures and in particular, we investigate in detail, the nature of spin torque and magnetic damping in such systems. Indeed, as will be further discussed in this thesis, the current-driven velocity of magnetic textures is related to the ratio between the so-called non-adiabatic torque and magnetic damping. Uncovering the physics underlying these phenomena can lead to the optimal design of magnetic systems with improved efficiency. We identified three interesting classes of systems which have attracted enormous research interest (i) Magnetic textures in systems with broken inversion symmetry: We investigate the nature of magnetic damping in non-centrosymmetric ferromagnets. Based on phenomenological and microscopic derivations, we show that the magnetic damping becomes chiral, i.e. depends on the chirality of the magnetic texture. (ii) Ferromagnetic domain walls, skyrmions and vortices: We address the physics of spin transport in sharp disordered magnetic domain walls and vortex cores. We demonstrate that upon spin-independent scattering, the non-adiabatic torque can be significantly enhanced. Such an enhancement is large for vortex cores compared to transverse domain walls. We also show that the topological spin currents owing in these structures dramatically enhances the non-adiabaticity, an effect unique to non-trivial topological textures (iii) Antiferromagnetic skyrmions: We extend this study to antiferromagnetic skyrmions and show that such an enhanced topological torque also exist in these systems. Even more interestingly, while such a non-adiabatic torque inuences the undesirable transverse velocity of ferromagnetic skyrmions, in antiferromagnetic skyrmions, the topological non-adiabatic torque directly determines the longitudinal velocity. As a consequence, scaling down the antiferromagnetic skyrmion results in a much more efficient spin torque.
Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.
2015-10-01
Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical
The Mysterious Southern Torque
McDowell, M. S.
2004-05-01
Something weird happened to twist the southern hemisphere out of alignment with the northern, as evidenced by the positions of the mountain ranges of North and South America, the Atlantic MAR, and the closure of West Africa to North America - all smooth were the torque reversed. What happened, and when, and why? We identify a number of global "cracks" of almost exactly the same length and direction, with some, even more peculiarly, turning the same angle, and proceeding an equal distance in the new direction. The Emperor-Hawaiian chain, the Louisville chain and the west coast of North America, as examples, are essentially parallel. Their northerly legs follow the angle of the axis of orbital ellipse. But then they all make equal 45 degree easterly bends, to 17.5 NW, and continue on, still parallel, for very similar distances. It is the same at the north coast of South America, and the mid-section of the MAR from 46W to 12W. It is the distance from the Cameroons to Kenya, from the south end of the Red Sea to the SE Indian Ridge at the Nema Fracture zone, from west to east of the Nazca plate.What is all this? Coincidence? Seeing things? Researchers have attributed plate motion or hot spot motion or both or absolutely none, to all of the above. Geophysicists have dated the surfaces from Archean to Pleistocene by all possible scientific means, certainly no possible correlation can be made. Yet we postulate the physical reality can be demonstrated. It is so global a phenomenon that it is well beyond what a hot spot or a plate could do. Even a really tremendous impact would have trouble making such precise geometric arrangements. So what is it - perhaps the angle of rotation, or the inertia of northern hemisphere mass above the geoid? And if so, then, what changed it? It would seem that some huge imbalance occurred. Suppose the whole bottom blew out of the southern hemisphere, and the center of mass drastically altered. Suppose some unknown universal force changed our
Integral torque balance in tokamaks
International Nuclear Information System (INIS)
Pustovitov, V.D.
2011-01-01
The study is aimed at clarifying the balance between the sinks and sources in the problem of intrinsic plasma rotation in tokamaks reviewed recently by deGrassie (2009 Plasma Phys. Control. Fusion 51 124047). The integral torque on the toroidal plasma is calculated analytically using the most general magnetohydrodynamic (MHD) plasma model taking account of plasma anisotropy and viscosity. The contributions due to several mechanisms are separated and compared. It is shown that some of them, though, possibly, important in establishing the rotation velocity profile in the plasma, may give small input into the integral torque, but an important contribution can come from the magnetic field breaking the axial symmetry of the configuration. In tokamaks, this can be the error field, the toroidal field ripple or the magnetic perturbation created by the correction coils in the dedicated experiments. The estimates for the error-field-induced electromagnetic torque show that the amplitude of this torque is comparable to the typical values of torques introduced into the plasma by neutral beam injection. The obtained relations allow us to quantify the effect that can be produced by the existing correction coils in tokamaks on the plasma rotation, which can be used in experiments to study the origin and physics of intrinsic rotation in tokamaks. Several problems are proposed for theoretical studies and experimental tests.
Effect of Filament Fineness on Composite Yarn Residual Torque
Directory of Open Access Journals (Sweden)
Sarıoğlu Esin
2018-03-01
Full Text Available Yarn residual torque or twist liveliness occurs when the twist is imparted to spin the fibers during yarn formation. It causes yarn snarling, which is an undesirable property and can lead the problems for further processes such as weaving and knitting. It affects the spirality of knitted fabrics and skewness of woven fabrics. Generally, yarn residual torque depends on yarn twist, yarn linear density, and fiber properties used. Composite yarns are widely produced to exploit two yarns with different properties such on optimum way at the same time and these yarns can be produced by wrapping sheath fibers around filament core fiber with a certain twist. In this study, the effect of filament fineness used as core component of composite yarn on residual torque was analyzed. Thus, the false twist textured polyester filament yarns with different filament fineness were used to produce composite yarns with different yarn count. The variance analysis was performed to determine the significance of twist liveliness of filament yarns and yarn count on yarn twist liveliness. Results showed that there is a statistically significant differences at significance level of α=0.05 between filament fineness and yarn residual torque of composite yarns.
Energy Technology Data Exchange (ETDEWEB)
Fornel, B. de [Institut National Polytechnique, 31 - Toulouse (France)
2006-05-15
The asynchronous machine, with its low cost and robustness, is today the most widely used motor to make speed variators. However, its main drawback is that the same current generates both the magnetic flux and the torque, and thus any torque variation creates a flux variation. Such a coupling gives to the asynchronous machine a nonlinear behaviour which makes its control much more complex. The direct self control (DSC) method has been developed to improve the low efficiency of the scalar control method and for the specific railway drive application. The direct torque control (DTC) method is derived from the DSC method but corresponds to other type of applications. The DSC and DTC algorithms for asynchronous motors are presented in this article: 1 - direct control of the stator flux (DSC): principle, flux control, torque control, switching frequency of the inverter, speed estimation; 2 - direct torque control (DTC): principle, electromagnetic torque derivative, signals shape and switching frequency, some results, DTC speed variator without speed sensor, DTC application to multi-machine multi-converter systems; 3 - conclusion. (J.S.)
Spin caloritronics, origin and outlook
International Nuclear Information System (INIS)
Yu, Haiming; Brechet, Sylvain D.; Ansermet, Jean-Philippe
2017-01-01
Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal
Spin caloritronics, origin and outlook
Energy Technology Data Exchange (ETDEWEB)
Yu, Haiming, E-mail: haiming.yu@buaa.edu.cn [Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University (China); Brechet, Sylvain D. [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland); Ansermet, Jean-Philippe, E-mail: jean-philippe.ansermet@epfl.ch [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland)
2017-03-03
Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal
Charge and Spin Transport in Spin-orbit Coupled and Topological Systems
Ndiaye, Papa Birame
2017-10-31
In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are
Mcpeak, W. L.
1975-01-01
A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.
Theory of high-resolution tunneling spin transport on a magnetic skyrmion
Palotás, Krisztián; Rózsa, Levente; Szunyogh, László
2018-01-01
Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...
Diffusion of torqued active particles
Sandoval, Mario; Lauga, Eric
2012-11-01
Motivated by swimming microorganisms whose trajectories are affected by the presence of an external torque, we calculate the diffusivity of an active particle subject to an external torque and in a fluctuating environment. The analytical results are compared with Brownian dynamics simulations showing excellent agreement between theory and numerical experiments. This work was funded in part by the Consejo Nacional de Ciencia y Tecnologia of Mexico (Conacyt postdoctoral fellowship to M. S.) and the US National Science Foundation (Grant CBET-0746285 to E.L.).
Meng, Feng; Zhang, Zhimin; Lin, Jing
The paper describes the reference torque standard machine with high accuracy and multifunction, developed by our institute, and introduces the structure and working principle of this machine. It has three main functions. The first function is the hydraulic torque wrench calibration function. The second function is torque multiply calibration function. The third function is reference torque standard machine function. We can calibrate the torque multipliers, hydraulic wrenches and transducers by this machine. A comparison experiment has been done between this machine and a deadweight torque standard machine. The consistency between the 30 kNm reference torque machine and the 2000 Nm dead-weight torque standard machine under the claimed uncertainties was verified.
Tunable spin-charge conversion through topological phase transitions in zigzag nanoribbons
Li, Hang
2016-06-29
We study spin-orbit torques and charge pumping in magnetic quasi-one-dimensional zigzag nanoribbons with a hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences a topological phase transition from a trivial band insulator to a quantum spin Hall insulator by tuning of either the magnetization direction or the intrinsic spin-orbit coupling. We find that the spin-charge conversion efficiency (i.e., spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.
Tunable spin-charge conversion through topological phase transitions in zigzag nanoribbons
Li, Hang; Manchon, Aurelien
2016-01-01
We study spin-orbit torques and charge pumping in magnetic quasi-one-dimensional zigzag nanoribbons with a hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences a topological phase transition from a trivial band insulator to a quantum spin Hall insulator by tuning of either the magnetization direction or the intrinsic spin-orbit coupling. We find that the spin-charge conversion efficiency (i.e., spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.
Friction torque in thrust ball bearings grease lubricated
Ianuş, G.; Dumitraşcu, A. C.; Cârlescu, V.; Olaru, D. N.
2016-08-01
The authors investigated experimentally and theoretically the friction torque in a modified thrust ball bearing having only 3 balls operating at low axial load and lubricated with NGLI-00 and NGLI-2 greases. The experiments were made by using spin-down methodology and the results were compared with the theoretical values based on Biboulet&Houpert's rolling friction equations. Also, the results were compared with the theoretical values obtained with SKF friction model adapted for 3 balls. A very good correlation between experiments and Biboulet_&_Houpert's predicted results was obtained for the two greases. Also was observed that the theoretical values for the friction torque calculated with SKF model adapted for a thrust ball bearing having only 3 balls are smaller that the experimental values.
Installation Torque Tables for Noncritical Applications
Rivera-Rosario, Hazel T.; Powell, Joseph S.
2017-01-01
The objective of this project is to define torque values for bolts and screws when loading is not a concern. Fasteners require a certain torque to fulfill its function and prevent failure. NASA Glenn Research Center did not have a set of fastener torque tables for non-critical applications without loads, usually referring to hand-tight or wrench-tight torqueing. The project is based on two formulas, torque and pullout load. Torque values are calculated giving way to preliminary data tables. Testing is done to various bolts and metal plates, torqueing them until the point of failure. Around 640 torque tables were developed for UNC, UNF, and M fasteners. Different lengths of thread engagement were analyzed for the 5 most common materials used at GRC. The tables were put together in an Excel spreadsheet and then formatted into a Word document. The plan is to later convert this to an official technical publication or memorandum.
Spin Funneling for Enhanced Spin Injection into Ferromagnets
Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo
2016-07-01
It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.
Nonlocal torque operators in ab initio theory of the Gilbert damping in random ferromagnetic alloys
Czech Academy of Sciences Publication Activity Database
Turek, Ilja; Kudrnovský, Josef; Drchal, Václav
2015-01-01
Roč. 92, č. 21 (2015), 214407-1-214407-11 ISSN 1098-0121 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68081723 ; RVO:68378271 Keywords : magnetic damping * spin torque Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014
A graphite based STT-RAM cell with reduction in switching current
Varghani, Ali; Peiravi, Ali
2015-10-01
Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for "universal memory" because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 μA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF).
14 CFR 23.361 - Engine torque.
2010-01-01
... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Engine torque. 23.361 Section 23.361... Engine torque. (a) Each engine mount and its supporting structure must be designed for the effects of— (1) A limit engine torque corresponding to takeoff power and propeller speed acting simultaneously with...
14 CFR 29.361 - Engine torque.
2010-01-01
... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Engine torque. 29.361 Section 29.361... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Strength Requirements Flight Loads § 29.361 Engine torque. The limit engine torque may not be less than the following: (a) For turbine engines, the highest of— (1) The...
14 CFR 25.361 - Engine torque.
2010-01-01
... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Engine torque. 25.361 Section 25.361... STANDARDS: TRANSPORT CATEGORY AIRPLANES Structure Supplementary Conditions § 25.361 Engine torque. (a) Each engine mount and its supporting structure must be designed for the effects of— (1) A limit engine torque...
Measuring the uncertainty of tapping torque
DEFF Research Database (Denmark)
Belluco, Walter; De Chiffre, Leonardo
An uncertainty budget is carried out for torque measurements performed at the Institut for Procesteknik for the evaluation of cutting fluids. Thirty test blanks were machined with one tool and one fluid, torque diagrams were recorded and the repeatability of single torque measurements was estimat...
Thermal spin pumping mediated by magnons in the semiclassical regime
International Nuclear Information System (INIS)
Nakata, Kouki
2012-01-01
We microscopically analyze thermal spin pumping mediated by magnons, at the interface between a ferromagnetic insulator and a non-magnetic metal, in the semiclassical regime. The generation of a spin current is discussed by calculating the thermal spin transfer torque, which breaks the spin conservation law for conduction electrons and operates the coherent magnon state. Inhomogeneous thermal fluctuations between conduction electrons and magnons induce a net spin current, which is pumped into the adjacent non-magnetic metal. The pumped spin current is proportional to the temperature difference. When the effective temperature of magnons is lower than that of conduction electrons, localized spins lose spin angular momentum by emitting magnons and conduction electrons flip from down to up by absorbing all the emitted momentum, and vice versa. Magnons at the zero mode cannot contribute to thermal spin pumping because they are eliminated by the spin-flip condition. Consequently thermal spin pumping does not cost any kind of applied magnetic fields
The Control of Switched Reluctance Motor in Electric Vehicle
Directory of Open Access Journals (Sweden)
Zheng Liu
2014-05-01
Full Text Available The control of SRM was discussed: current chopping control, angle position control. This paper presents an inverter circuit and a fuzzy sliding mode control method to minimize the torque fluctuation and noise of the SRM. Based on the experimental results, Using the inverter circuit and fuzzy sliding mode control method can effectively minimize the torque fluctuation and noise of the SRM, For the switched reluctance motor applications in electric vehicles to provide a theoretical basis.
Universal Mechanism of Spin Relaxation in Solids
Chudnovsky, Eugene
2006-03-01
Conventional elastic theory ignores internal local twists and torques. Meantime, spin-lattice relaxation is inherently coupled with local elastic twists through conservation of the total angular momentum (spin + lattice). This coupling gives universal lower bound (free of fitting parameters) on the relaxation of the atomic or molecular spin in a solid [1] and on the relaxation of the electron spin in a quantum dot [2]. [1] E. M. Chudnovsky, D. A. Garanin, and R. Schilling, Phys. Rev. B 72, 094426 (2005). [2] C. Calero, E. M. Chudnovsky, and D. A. Garanin, Phys. Rev. Lett. 95, 166603 (2005).
International Nuclear Information System (INIS)
Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.
1987-01-01
The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)
A Novel Single Phase Hybrid Switched Reluctance Motor Drive System
DEFF Research Database (Denmark)
Liang, Jianing; Xu, Guoqing; Jian, Linni
2011-01-01
In this paper, a novel single phase hybrid switched reluctance motor(SRM) drive system is proposed. It integrated a single phase hybrid SRM and a novel single phase boost converter. This motor can reduce the number of phase switch. And the permanent magnet which is used in the motor can improve...... the performance and efficiency of SR motor. However, the inherent characteristic of this motor is that the negative torque is very sensitive with the excitation current near the turn-on angle. The slow excitation current limits the torque generation region and reduces the average torque. Therefore, a novel single...... phase boost converter is applied to improve the performance of this motor. It is easy to generate a double dclink voltage and dc-link voltage and switch both of them. The voltage of boost capacitor is self balance, so the protective circuit is not need to consider. The fast excitation mode helps hybrid...
Determination of intrinsic spin Hall angle in Pt
Energy Technology Data Exchange (ETDEWEB)
Wang, Yi; Deorani, Praveen; Qiu, Xuepeng; Kwon, Jae Hyun; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 (Singapore)
2014-10-13
The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.
Determination of intrinsic spin Hall angle in Pt
International Nuclear Information System (INIS)
Wang, Yi; Deorani, Praveen; Qiu, Xuepeng; Kwon, Jae Hyun; Yang, Hyunsoo
2014-01-01
The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.
Spin-resolved electron waiting times in a quantum-dot spin valve
Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian
2018-04-01
We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.
Dieny, B.; Sousa, R.; Prejbeanu, L.
2007-04-01
Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic
International Nuclear Information System (INIS)
Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki
2016-01-01
Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the
Energy Technology Data Exchange (ETDEWEB)
Barangi, Mahmood, E-mail: barangi@umich.edu; Erementchouk, Mikhail; Mazumder, Pinaki [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2121 (United States)
2016-08-21
Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the
Starquake-induced Magnetic Field and Torque Evolution in Neutron Stars
International Nuclear Information System (INIS)
Link, B.; Franco, L.M.; Epstein, R.I.
1998-01-01
The persistent increases in spin-down rate (offsets) seen to accompany glitches in the Crab and other pulsars suggest increases in the spin-down torque. We interpret these offsets as due to starquakes occurring as the star spins down and the rigid crust becomes less oblate. We study the evolution of strain in the crust, the initiation of starquakes, and possible consequences for magnetic field and torque evolution. Crust cracking occurs as equatorial material shears under the compressive forces arising from the star's decreasing circumference and as matter moves to higher latitudes along a fault inclined to the equator. A starquake is most likely to originate near one of the two points on the rotational equator farthest from the magnetic poles. The material breaks along a fault approximately aligned with the magnetic poles. We suggest that the observed offsets come about when a starquake perturbs the star's mass distribution, producing a misalignment of the angular momentum and spin axes. Subsequently, damped precession to a new rotational state increases the angle α between the rotation and magnetic axes. The resulting increase in external torque appears as a permanent increase in the spin-down rate. Repeated starquakes would continue to increase α, making the pulsar more of an orthogonal rotator. copyright copyright 1998. The American Astronomical Society
Lattime, Scott B.; Borowski, Richard
2009-01-01
The EcoTurn Class K production prototypes have passed all AAR qualification tests and received conditional approval. The accelerated life test on the second set of seals is in progress. Due to the performance of the first set, no problems are expected.The seal has demonstrated superior performance over the HDL seal in the test lab with virtually zero torque and excellent contamination exclusion and grease retention.
Torque application technique and apparatus
Pineault, Raymond P.
1993-11-01
A tool which produces a measured torque is coupled to a bolt head or nut, located in a relatively inaccessible area, by apparatus which includes a wrench member affixed to an adaptor. The wrench member is sized and shaped to engage the fastener to be operated upon and the adaptor has a tubular construction with a tool engaging socket at one end. The adaptor is provided with an elongated slot which accommodates any wires which may pass through the fastener.
A High Torque Density Axial Flux SRM with Modular Stator
Directory of Open Access Journals (Sweden)
Y Ebrahimi
2015-12-01
Full Text Available A novel structure of switched reluctance motors (SRMs is proposed. The proposed structure uses the benefits of the axial flux path, short flux path, segmental rotor, and flux reversal free stator motors all together to improve the torque density of the SRMs. The main geometrical, electrical and physical specifications are presented. In addition, some features of the proposed structure are compared with those of a state-of-the-art radial flux SRM, considered as a reference motor. Then, the proposed structure is modified by employing a higher number of rotor segments than the stator modules and at the same time, reshaped stator modules tips. Achieved results reveal that, compared with the reference motor, the proposed and the modified proposed motors deliver about the same torque with 36.5% and 46.7% lower active material mass, respectively. The efficiency and torque production capability for the extended current densities are also retained. These make the proposed structures a potentially proper candidate for the electric vehicles (EVs and hybrid electric vehicles (HEVs as an in-wheel motor.
Space Suit Joint Torque Testing
Valish, Dana J.
2011-01-01
In 2009 and early 2010, a test was performed to quantify the torque required to manipulate joints in several existing operational and prototype space suits in an effort to develop joint torque requirements appropriate for a new Constellation Program space suit system. The same test method was levied on the Constellation space suit contractors to verify that their suit design meets the requirements. However, because the original test was set up and conducted by a single test operator there was some question as to whether this method was repeatable enough to be considered a standard verification method for Constellation or other future space suits. In order to validate the method itself, a representative subset of the previous test was repeated, using the same information that would be available to space suit contractors, but set up and conducted by someone not familiar with the previous test. The resultant data was compared using graphical and statistical analysis and a variance in torque values for some of the tested joints was apparent. Potential variables that could have affected the data were identified and re-testing was conducted in an attempt to eliminate these variables. The results of the retest will be used to determine if further testing and modification is necessary before the method can be validated.
Spin torques in ferromagnetic/normal-metal structures
Czech Academy of Sciences Publication Activity Database
Xia, K.; Kelly, P. J.; Bauer, G. E. W.; Brataas, A.; Turek, Ilja
2002-01-01
Roč. 65, č. 22 (2002), s. 220401 ISSN 0163-1829 R&D Projects: GA ČR GA202/00/0122 Institutional research plan: CEZ:AV0Z2041904 Keywords : tunneling * interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002