Efficient micromagnetic modelling of spin-transfer torque and spin-orbit torque

Science.gov (United States)

Abert, Claas; Bruckner, Florian; Vogler, Christoph; Suess, Dieter

2018-05-01

While the spin-diffusion model is considered one of the most complete and accurate tools for the description of spin transport and spin torque, its solution in the context of dynamical micromagnetic simulations is numerically expensive. We propose a procedure to retrieve the free parameters of a simple macro-spin like spin-torque model through the spin-diffusion model. In case of spin-transfer torque the simplified model complies with the model of Slonczewski. A similar model can be established for the description of spin-orbit torque. In both cases the spin-diffusion model enables the retrieval of free model parameters from the geometry and the material parameters of the system. Since these parameters usually have to be determined phenomenologically through experiments, the proposed method combines the strength of the diffusion model to resolve material parameters and geometry with the high performance of simple torque models.

Spin-orbit torques in locally and globally noncentrosymmetric crystals: Antiferromagnets and ferromagnets

KAUST Repository

Železný , J.; Gao, H.; Manchon, Aurelien; Freimuth, Frank; Mokrousov, Yuriy; Zemen, J.; Mašek, J.; Sinova, Jairo; Jungwirth, T.

2017-01-01

One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný, Phys. Rev. Lett. 113, 157201 (2014)]PRLTAO0031-900710.1103/PhysRevLett.113.157201, the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley, Science 351, 587 (2016)]SCIEAS0036-807510.1126/science.aab1031. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.

Spin-orbit torques in locally and globally noncentrosymmetric crystals: Antiferromagnets and ferromagnets

KAUST Repository

Železný, J.

2017-01-10

One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný, Phys. Rev. Lett. 113, 157201 (2014)]PRLTAO0031-900710.1103/PhysRevLett.113.157201, the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley, Science 351, 587 (2016)]SCIEAS0036-807510.1126/science.aab1031. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

International Nuclear Information System (INIS)

Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

2014-01-01

A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

Science.gov (United States)

Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

2014-06-01

A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

International Nuclear Information System (INIS)

Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wong, Kin L.; Wang, Kang L.; Wu, Hao; Han, Xiufeng; Zhang, Zongzhi; Khalili Amiri, Pedram

2016-01-01

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co_4_0Fe_4_0B_2_0 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

Spatially and time-resolved magnetization dynamics driven by spin-orbit torques

Science.gov (United States)

Baumgartner, Manuel; Garello, Kevin; Mendil, Johannes; Avci, Can Onur; Grimaldi, Eva; Murer, Christoph; Feng, Junxiao; Gabureac, Mihai; Stamm, Christian; Acremann, Yves; Finizio, Simone; Wintz, Sebastian; Raabe, Jörg; Gambardella, Pietro

2017-10-01

Current-induced spin-orbit torques are one of the most effective ways to manipulate the magnetization in spintronic devices, and hold promise for fast switching applications in non-volatile memory and logic units. Here, we report the direct observation of spin-orbit-torque-driven magnetization dynamics in Pt/Co/AlOx dots during current pulse injection. Time-resolved X-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a subnanosecond current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of the damping-like and field-like spin-orbit torques and the Dzyaloshinskii-Moriya interaction, and show that reproducible switching events can be obtained for over 1012 reversal cycles.

Scanning-SQUID investigation of spin-orbit torque acting on yttrium iron garnet devices

Science.gov (United States)

Rosenberg, Aaron J.; Jermain, Colin L.; Aradhya, Sriharsha V.; Brangham, Jack T.; Nowack, Katja C.; Kirtley, John R.; Yang, Fengyuan; Ralph, Daniel C.; Moler, Kathryn A.

Successful manipulation of electrically insulating magnets, such as yttrium iron garnet, by by current-driven spin-orbit torques could provide a highly efficient platform for spintronic memory. Compared to devices fabricated using magnetic metals, magnetic insulators have the advantage of the ultra-low magnetic damping and the elimination of shunting currents in the magnet that reduce the torque efficiency. Here, we apply current in the spin Hall metal β-Ta to manipulate the magnetic orientation of micron-sized, electrically-insulating yttrium iron garnet devices. We do not observe spin-torque switching even for applied currents well above the critical current expected in a macrospin switching model. This suggests either inefficient transfer of spin torque at our Ta/YIG interface or a breakdown of the macrospin approximation. This work is supported by FAME, one of six centers of STARnet sponsored by MARCO and DARPA. The SQUID microscope and sensors were developed with support from the NSF-sponsored Center NSF-NSEC 0830228, and from NSF IMR-MIP 0957616.

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

KAUST Repository

Li, Lailai

2017-10-04

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

Self-consistent treatment of spin and magnetization dynamic effect in spin transfer switching

International Nuclear Information System (INIS)

Guo Jie; Tan, Seng Ghee; Jalil, Mansoor Bin Abdul; Koh, Dax Enshan; Han, Guchang; Meng, Hao

2011-01-01

The effect of itinerant spin moment (m) dynamic in spin transfer switching has been ignored in most previous theoretical studies of the magnetization (M) dynamics. Thus in this paper, we proposed a more refined micromagnetic model of spin transfer switching that takes into account in a self-consistent manner of the coupled m and M dynamics. The numerical results obtained from this model further shed insight on the switching profiles of m and M, both of which show particular sensitivity to parameters such as the anisotropy field, the spin torque field, and the initial deviation between m and M.

Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

Science.gov (United States)

Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

2015-09-01

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

2015-01-01

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

Advanced Macro-Model with Pulse-Width Dependent Switching Characteristic for Spin Transfer Torque Based Magnetic-Tunnel-Junction Elements

Science.gov (United States)

Sojeong Kim,; Seungjun Lee,; Hyungsoon Shin,

2010-04-01

In spin transfer torque (STT)-based magnetic tunnel junction (MTJ), the switching depends on the current pulse-width as well as the magnitude of the switching current. We present an advanced macro-model of an STT-MTJ for a circuit simulator such as HSPICE. The macro-model can simulate the dependence of switching behavior on current pulse-width in an STT-MTJ. An imaginary resistor-capacitor (RC) circuit is adopted to emulate complex timing behavior which cannot be described nicely by existing functions in HSPICE. Simulation results show the resistance-current (R-I) curve and timing behavior is in good agreement with the experimental data.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

Science.gov (United States)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung

2015-04-06

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurelien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-01-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries

OpenAIRE

Yu, Guoqiang; Akyol, Mustafa; Upadhyaya, Pramey; Li, Xiang; He, Congli; Fan, Yabin; Montazeri, Mohammad; Alzate, Juan G.; Lang, Murong; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.

2016-01-01

Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied. Recently, it has been further demonstrated that the in-plane magnetic field can be eliminated by introducing a new type of perpendicular field-like SOT via incorporating a lateral structural a...

Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from

Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction

KAUST Repository

Ortiz Pauyac, Christian

2016-06-19

In the present thesis we introduce the reader to the field of spintronics and explore new phenomena, such as spin transfer torques, spin filtering, and three types of spin-orbit torques, Rashba, spin Hall, and spin swapping, which have emerged very recently and are promising candidates for a new generation of memory devices in computer technology. A general overview of these phenomena is presented in Chap. 1. In Chap. 2 we study spin transfer torques in tunnel junctions in the presence of spin filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives are summarized in Chap. 5.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.; Chshiev, M.; Manchon, Aurelien

2015-01-01

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.

2015-02-11

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Precessional switching of antiferromagnets by electric field induced Dzyaloshinskii-Moriya torque

Science.gov (United States)

Kim, T. H.; Grünberg, P.; Han, S. H.; Cho, B. K.

2018-05-01

Antiferromagnetic insulators (AFIs) have attracted much interest from many researchers as promising candidates for use in ultrafast, ultralow-dissipation spintronic devices. As a fast method of reversing magnetization, precessional switching is realized when antiferromagnetic Néel orders l =(s1+s2 )/2 surmount the magnetic anisotropy or potential barrier in a given magnetic system, which is described well by the antiferromagnetic plane pendulum (APP) model. Here, we report that, as an alternative switching scenario, the direct coupling of an electric field with Dzyaloshinskii-Moriya (DM) interaction, which stems from spin-orbit coupling, is exploited for optimal switching. We derive the pendulum equation of motion of antiferromagnets, where DM torque is induced by a pulsed electric field. The temporal DM interaction is found to not only be in the form of magnetic torques (e.g., spin-orbit torque or magnetic field) but also modifies the magnetic potential that limits l 's activity; as a result, appropriate controls (e.g., direction, magnitude, and pulse shape) of the induced DM vector realize deterministic reversal in APP. The results present an approach for the control of a magnetic storage device by means of an electric field.

Spin transport and spin torque in antiferromagnetic devices

Science.gov (United States)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Electron spin torque in atoms

International Nuclear Information System (INIS)

Hara, Takaaki; Senami, Masato; Tachibana, Akitomo

2012-01-01

The spin torque and zeta force, which govern spin dynamics, are studied by using monoatoms in their steady states. We find nonzero local spin torque in transition metal atoms, which is in balance with the counter torque, the zeta force. We show that d-orbital electrons have a crucial effect on these torques. Nonzero local chirality density in transition metal atoms is also found, though the electron mass has the effect to wash out nonzero chirality density. Distribution patterns of the chirality density are the same for Sc–Ni atoms, though the electron density distributions are different. -- Highlights: ► Nonzero local spin torque is found in the steady states of transition metal atoms. ► The spin steady state is realized by the existence of a counter torque, zeta force. ► D-orbital electrons have a crucial effect on the spin torque and zeta force. ► Nonzero local chiral density is found in spite of the washout by the electron mass. ► Chiral density distribution have the same pattern for Sc–Ni atoms.

Current-Nonlinear Hall Effect and Spin-Orbit Torque Magnetization Switching in a Magnetic Topological Insulator

Science.gov (United States)

Yasuda, K.; Tsukazaki, A.; Yoshimi, R.; Kondou, K.; Takahashi, K. S.; Otani, Y.; Kawasaki, M.; Tokura, Y.

2017-09-01

The current-nonlinear Hall effect or second harmonic Hall voltage is widely used as one of the methods for estimating charge-spin conversion efficiency, which is attributed to the magnetization oscillation by spin-orbit torque (SOT). Here, we argue the second harmonic Hall voltage under a large in-plane magnetic field with an in-plane magnetization configuration in magnetic-nonmagnetic topological insulator (TI) heterostructures, Crx (Bi1 -ySby )2 -xTe3 /(Bi1 -ySby )2Te3 , where it is clearly shown that the large second harmonic voltage is governed not by SOT but mainly by asymmetric magnon scattering without macroscopic magnetization oscillation. Thus, this method does not allow an accurate estimation of charge-spin conversion efficiency in TI. Instead, the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5 ×1010 A m-2 , showing its potential as a spintronic material.

Field-free deterministic ultrafast creation of magnetic skyrmions by spin-orbit torques

Science.gov (United States)

Büttner, Felix; Lemesh, Ivan; Schneider, Michael; Pfau, Bastian; Günther, Christian M.; Hessing, Piet; Geilhufe, Jan; Caretta, Lucas; Engel, Dieter; Krüger, Benjamin; Viefhaus, Jens; Eisebitt, Stefan; Beach, Geoffrey S. D.

2017-11-01

Magnetic skyrmions are stabilized by a combination of external magnetic fields, stray field energies, higher-order exchange interactions and the Dzyaloshinskii-Moriya interaction (DMI). The last favours homochiral skyrmions, whose motion is driven by spin-orbit torques and is deterministic, which makes systems with a large DMI relevant for applications. Asymmetric multilayers of non-magnetic heavy metals with strong spin-orbit interactions and transition-metal ferromagnetic layers provide a large and tunable DMI. Also, the non-magnetic heavy metal layer can inject a vertical spin current with transverse spin polarization into the ferromagnetic layer via the spin Hall effect. This leads to torques that can be used to switch the magnetization completely in out-of-plane magnetized ferromagnetic elements, but the switching is deterministic only in the presence of a symmetry-breaking in-plane field. Although spin-orbit torques led to domain nucleation in continuous films and to stochastic nucleation of skyrmions in magnetic tracks, no practical means to create individual skyrmions controllably in an integrated device design at a selected position has been reported yet. Here we demonstrate that sub-nanosecond spin-orbit torque pulses can generate single skyrmions at custom-defined positions in a magnetic racetrack deterministically using the same current path as used for the shifting operation. The effect of the DMI implies that no external in-plane magnetic fields are needed for this aim. This implementation exploits a defect, such as a constriction in the magnetic track, that can serve as a skyrmion generator. The concept is applicable to any track geometry, including three-dimensional designs.

Charge-induced spin torque in Weyl semimetals

Science.gov (United States)

Kurebayashi, Daichi; Nomura, Kentaro

In this work, we present phenomenological and microscopic derivations of spin torques in magnetically doped Weyl semimetals. As a result, we obtain the analytical expression of the spin torque generated, without a flowing current, when the chemical potential is modulated. We also find that this spin torque is a direct consequence of the chiral anomaly. Therefore, observing this spin torque in magnetic Weyl semimetals might be an experimental evidence of the chiral anomaly. This spin torque has also a great advantage in application. In contrast to conventional current-induced spin torques such as the spin-transfer torques, this spin torque does not accompany a constant current flow. Thus, devices using this operating principle is free from the Joule heating and possibly have higher efficiency than devices using conventional current-induced spin torques. This work was supported by JSPS KAKENHI Grant Number JP15H05854 and JP26400308.

Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

International Nuclear Information System (INIS)

Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

2013-01-01

We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle

Spin Orbit Torque in Ferromagnetic Semiconductors

KAUST Repository

Li, Hang

2016-06-21

Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read\\' and `write\\' in memory devices can be significantly improved. Hence, the manipulation of electron spin in electronic devices becomes more and more appealing for the advancement of microelectronics. In spin-based devices, the manipulation of ferromagnetic order parameter using electrical currents is a very useful means for current-driven operation. Nowadays, most of magnetic memory devices are based on the so-called spin transfer torque, which stems from the spin angular momentum transfer between a spin-polarized current and the magnetic order parameter. Recently, a novel spin torque effect, exploiting spin-orbit coupling in non-centrosymmetric magnets, has attracted a massive amount of attention. This thesis addresses the nature of spin-orbit coupled transport and torques in non-centrosymmetric magnetic semiconductors. We start with the theoretical study of spin orbit torque in three dimensional ferromagnetic GaMnAs. Using the Kubo formula, we calculate both the current-driven field-like torque and anti-damping-like torque. We compare the numerical results with the analytical expressions in the model case of a magnetic Rashba two-dimensional electron gas. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. Subsequently we study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. This thesis then addresses the influence of the quantum spin Hall

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Science.gov (United States)

MacNeill, D.; Stiehl, G. M.; Guimaraes, M. H. D.; Buhrman, R. A.; Park, J.; Ralph, D. C.

2017-03-01

Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation--the component of torque that can compensate magnetic damping is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidamping switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin-source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidamping torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling spin-orbit torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies.

Dirac spin-orbit torques and charge pumping at the surface of topological insulators

KAUST Repository

Ndiaye, Papa Birame

2017-07-07

We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

Dirac spin-orbit torques and charge pumping at the surface of topological insulators

Science.gov (United States)

Ndiaye, Papa B.; Akosa, C. A.; Fischer, M. H.; Vaezi, A.; Kim, E.-A.; Manchon, A.

2017-07-01

We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

Dirac spin-orbit torques and charge pumping at the surface of topological insulators

KAUST Repository

Ndiaye, Papa Birame; Akosa, Collins Ashu; Fischer, M. H.; Vaezi, A.; Kim, E.-A.; Manchon, Aurelien

2017-01-01

We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

Stability analysis of perpendicular magnetic trilayers with a field-like spin torque

International Nuclear Information System (INIS)

Wang, Ri-Xing; Zhao, Jing-Li; He, Peng-Bin; Gu, Guan-Nan; Li, Zai-Dong; Pan, An-Lian; Liu, Quan-Hui

2013-01-01

We have analytically studied the magnetization dynamics in magnetic trilayers with perpendicular anisotropy for both free and pinned layers. By linear stability analysis, we obtain the phase diagram parameterized by the current, magnetic field and relative strength of the field-like spin torque to Slonczewski torque. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out-of-plane precession, and bistable states can be realized. The precession frequency can be expressed as a function of the current and external magnetic field. In addition, the presence of field-like spin torque can change the switching current and precession frequency. - Highlights: ► The phase diagram is obtained by linear stability analysis. ► The precession frequency can be controlled by the current and magnetic field. ► Field-like spin torque can change instability current and precession frequency.

Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes

Science.gov (United States)

Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.

2015-10-01

Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

Science.gov (United States)

Grollier, Julie

2013-03-01

Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien

2018-01-29

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien; Miron, I. M.; Jungwirth, T.; Sinova, J.; Zelezný , J.; Thiaville, A.; Garello, K.; Gambardella, P.

2018-01-01

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in a W /Co40Fe40B20/MgO Structure with Perpendicular Magnetic Anisotropy

Science.gov (United States)

Hao, Qiang; Xiao, Gang

2015-03-01

We obtain robust perpendicular magnetic anisotropy in a β -W /Co40Fe40B20/MgO structure without the need of any insertion layer between W and Co40Fe40B20 . This is achieved within a broad range of W thicknesses (3.0-9.0 nm), using a simple fabrication technique. We determine the spin Hall angle (0.40) and spin-diffusion length for the bulk β form of tungsten with a large spin-orbit coupling. As a result of the giant spin Hall effect in β -W and careful magnetic annealing, we significantly reduce the critical current density for the spin-transfer-torque-induced magnetic switching in Co40Fe40B20 . The elemental β -W is a superior candidate for magnetic memory and spin-logic applications.

Spin Switching via Quantum Dot Spin Valves

Science.gov (United States)

Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

2018-01-01

We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction

KAUST Repository

Ortiz Pauyac, Christian

2016-01-01

filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives

Shot noise of spin current and spin transfer torque

Science.gov (United States)

Yu, Yunjin; Zhan, Hongxin; Wan, Langhui; Wang, Bin; Wei, Yadong; Sun, Qingfeng; Wang, Jian

2013-04-01

We report the theoretical investigation of the shot noise of the spin current (Sσ) and the spin transfer torque (Sτ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear Sσ - V and Sτ - V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage Nτ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque Nτ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period Nτ(θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters.

Self-oscillation in spin torque oscillator stabilized by field-like torque

International Nuclear Information System (INIS)

Taniguchi, Tomohiro; Tsunegi, Sumito; Kubota, Hitoshi; Imamura, Hiroshi

2014-01-01

The effect of the field-like torque on the self-oscillation of the magnetization in spin torque oscillator with a perpendicularly magnetized free layer was studied theoretically. A stable self-oscillation at zero field is excited for negative β while the magnetization dynamics stops for β = 0 or β > 0, where β is the ratio between the spin torque and the field-like torque. The reason why only the negative β induces the self-oscillation was explained from the view point of the energy balance between the spin torque and the damping. The oscillation power and frequency for various β were also studied by numerical simulation

Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure

KAUST Repository

Wang, Xuhui; Ortiz Pauyac, Christian; Manchon, Aurelien

2014-01-01

Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.

Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure

KAUST Repository

Wang, Xuhui

2014-02-07

Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.

Shot noise of spin current and spin transfer torque

International Nuclear Information System (INIS)

Yu Yunjin; Zhan Hongxin; Wan Langhui; Wang Bin; Wei Yadong; Sun Qingfeng; Wang Jian

2013-01-01

We report the theoretical investigation of the shot noise of the spin current (S σ ) and the spin transfer torque (S τ ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear S σ − V and S τ − V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage N τ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque N τ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period N τ (θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters. (paper)

Spin-torque generation in topological insulator based heterostructures

KAUST Repository

Fischer, Mark H.

2016-03-11

Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.

Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien; Waintal, Xavier

2014-01-01

Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2014-05-28

Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green\\'s function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

Thermally induced magnonic spin current, thermomagnonic torques, and domain-wall dynamics in the presence of Dzyaloshinskii-Moriya interaction

Science.gov (United States)

Wang, X.-G.; Chotorlishvili, L.; Guo, G.-H.; Sukhov, A.; Dugaev, V.; Barnaś, J.; Berakdar, J.

2016-09-01

Thermally activated domain-wall (DW) motion in magnetic insulators has been considered theoretically, with a particular focus on the role of Dzyaloshinskii-Moriya interaction (DMI) and thermomagnonic torques. The thermally assisted DW motion is a consequence of the magnonic spin current due to the applied thermal bias. In addition to the exchange magnonic spin current and the exchange adiabatic and the entropic spin transfer torques, we also consider the DMI-induced magnonic spin current, thermomagnonic DMI fieldlike torque, and the DMI entropic torque. Analytical estimations are supported by numerical calculations. We found that the DMI has a substantial influence on the size and the geometry of DWs, and that the DWs become oriented parallel to the long axis of the nanostrip. Increasing the temperature smoothes the DWs. Moreover, the thermally induced magnonic current generates a torque on the DWs, which is responsible for their motion. From our analysis it follows that for a large enough DMI the influence of DMI-induced fieldlike torque is much stronger than that of the DMI and the exchange entropic torques. By manipulating the strength of the DMI constant, one can control the speed of the DW motion, and the direction of the DW motion can be switched, as well. We also found that DMI not only contributes to the total magnonic current, but also it modifies the exchange magnonic spin current, and this modification depends on the orientation of the steady-state magnetization. The observed phenomenon can be utilized in spin caloritronics devices, for example in the DMI based thermal diodes. By switching the magnetization direction, one can rectify the total magnonic spin current.

Heat-driven spin torques in antiferromagnets

Science.gov (United States)

Białek, Marcin; Bréchet, Sylvain; Ansermet, Jean-Philippe

2018-04-01

Heat-driven magnetization damping, which is a linear function of a temperature gradient, is predicted in antiferromagnets by considering the sublattice dynamics subjected to a heat-driven spin torque. This points to the possibility of achieving spin torque oscillator behavior. The model is based on the magnetic Seebeck effect acting on sublattices which are exchange coupled. The heat-driven spin torque is estimated and the feasibility of detecting this effect is discussed.

Tailoring spin-orbit torque in diluted magnetic semiconductors

KAUST Repository

Li, Hang; Wang, Xuhui; Doǧan, Fatih; Manchon, Aurelien

2013-01-01

We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

Tailoring spin-orbit torque in diluted magnetic semiconductors

KAUST Repository

Li, Hang

2013-05-16

We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien; Matsumoto, R.; Jaffres, H.; Grollier, J.

2012-01-01

in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

Science.gov (United States)

Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

2018-03-01

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

Critical current density for spin transfer torque switching with composite free layer structure

OpenAIRE

You, Chun-Yeol

2009-01-01

Critical current density of composite free layer (CFL) in magnetic tunneling junction is investigated. CFL consists of two exchange coupled ferromagnetic layers, where the coupling is parallel or anti-parallel. Instability condition of the CFL under the spin transfer torque, which is related with critical current density, is obtained by analytic spin wave excitation model and confirmed by macro-spin Landau-Lifshitz-Gilbert equation. The critical current densities for the coupled two identical...

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.

2017-12-08

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

2017-01-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien; Lee, K.-J.

2011-01-01

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien

2011-07-13

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Current-induced torques and interfacial spin-orbit coupling

KAUST Repository

Haney, Paul M.; Lee, Hyun-Woo; Lee, Kyung-Jin; Manchon, Aurelien; Stiles, M. D.

2013-01-01

In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

Current-induced torques and interfacial spin-orbit coupling

KAUST Repository

Haney, Paul M.

2013-12-19

In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

Current-induced Rashba spin orbit torque in silicene

Energy Technology Data Exchange (ETDEWEB)

Chen, Ji, E-mail: muze7777@hdu.edu.cn [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Peng, Yingzi [Department of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhou, Jie [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China)

2017-06-15

Highlights: • The spin dynamics of a ferromagnetic layer coupled to a silicene is investigated. • The Rashba spin orbit torque is obtained and the well-known LLG equation is modified. • The explicit forms of spin orbit torques in Domain Wall and vortex is also obtained. - Abstract: We study theoretically the spin torque of a ferromagnetic layer coupled to a silicene in the presence of the intrinsic Rashba spin orbit coupling (RSOC) effect. By using gauge field method, we find that under the applied current, the RSOC can induce an effective field which will result in the spin precession of conduction electron without applying any magnetic field. We also derive the spin torques due to the RSOC, which generalize the Landau-Lifshitz-Gilbert (LLG) equation. The spin torques are related to the applied current, the carrier density and Rashba strength of the system.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-10-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

Back-Hopping in Spin-Transfer-Torque Devices: Possible Origin and Countermeasures

Science.gov (United States)

Abert, Claas; Sepehri-Amin, Hossein; Bruckner, Florian; Vogler, Christoph; Hayashi, Masamitsu; Suess, Dieter

2018-05-01

The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back-hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the destabilization of the pinned layer, which leads to the perpetual switching of both layers. While the presented mechanism is not claimed to be the only possible reason for back-hopping, we show that it is a fundamental effect that will occur in any spin-transfer-torque device when exceeding a critical current. The influence of different material parameters on the critical switching currents for the free and pinned layer is obtained by micromagnetic simulations. The spin-diffusion model enables an accurate description of the torque on both layers, depending on various material parameters. It is found that the choice of a free-layer material with low polarization β and saturation magnetization Ms and a pinned-layer material with high β and Ms leads to a low free-layer critical current and a high pinned-layer critical current and hence reduces the likelihood of back-hopping. While back-hopping has been observed in various types of devices, there are only a few experiments that exhibit this effect in perpendicularly magnetized systems. However, our simulations suggest that the described effect will also gain importance in perpendicular systems due to the loss of pinned-layer anisotropy for decreasing device sizes.

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

Science.gov (United States)

Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M. D.

2017-09-01

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

Energy Technology Data Exchange (ETDEWEB)

Skinner, T. D., E-mail: tds32@cam.ac.uk; Irvine, A. C.; Heiss, D.; Kurebayashi, H.; Ferguson, A. J., E-mail: ajf1006@cam.ac.uk [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Wang, M.; Hindmarch, A. T.; Rushforth, A. W. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

2014-02-10

Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven ferromagnetic resonance technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, was analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the sum of the field-like torque and Oersted torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.

Manipulating femtosecond spin-orbit torques with laser pulse sequences to control magnetic memory states and ringing

Science.gov (United States)

Lingos, P. C.; Wang, J.; Perakis, I. E.

2015-05-01

Femtosecond (fs) coherent control of collective order parameters is important for nonequilibrium phase dynamics in correlated materials. Here, we propose such control of ferromagnetic order based on using nonadiabatic optical manipulation of electron-hole (e -h ) photoexcitations to create fs carrier-spin pulses with controllable direction and time profile. These spin pulses are generated due to the time-reversal symmetry breaking arising from nonperturbative spin-orbit and magnetic exchange couplings of coherent photocarriers. By tuning the nonthermal populations of exchange-split, spin-orbit-coupled semiconductor band states, we can excite fs spin-orbit torques that control complex magnetization pathways between multiple magnetic memory states. We calculate the laser-induced fs magnetic anisotropy in the time domain by using density matrix equations of motion rather than the quasiequilibrium free energy. By comparing to pump-probe experiments, we identify a "sudden" out-of-plane magnetization canting displaying fs magnetic hysteresis, which agrees with switchings measured by the static Hall magnetoresistivity. This fs transverse spin-canting switches direction with magnetic state and laser frequency, which distinguishes it from the longitudinal nonlinear optical and demagnetization effects. We propose that sequences of clockwise or counterclockwise fs spin-orbit torques, photoexcited by shaping two-color laser-pulse sequences analogous to multidimensional nuclear magnetic resonance (NMR) spectroscopy, can be used to timely suppress or enhance magnetic ringing and switching rotation in magnetic memories.

Strain engineered magnetic tunnel junctions and spin-orbit torque switching (Conference Presentation)

Science.gov (United States)

Wu, Yang; Narayanapillai, Kulothungasagaran; Elyasi, Mehrdad; Qiu, Xuepeng; Yang, Hyunsoo

2016-10-01

The efficient generation of pure spin currents and manipulation of the magnetization dynamics of magnetic structures is of central importance in the field of spintronics. The spin-orbit effect is one of the promising ways to generate spin currents, in which a charge current can be converted to a transverse spin current due to the spin-orbit interaction. We investigate the spin dynamics in the presence of strong spin-orbit coupling materials such as LaAlO3/SrTiO3 oxide heterostructures. Angle dependent magnetoresistance measurements are employed to detect and understand the current-induced spin-orbit torques, and an effective field of 2.35 T is observed for a dc-current of 200 uA. In order to understand the interaction between light and spin currents, we use a femtosecond laser to excite an ultrafast transient spin current and subsequent terahertz (THz) emission in nonmagnet (NM)/ferromagnet (FM)/oxide heterostructures. The THz emission strongly relies on spin-orbit interaction, and is tailored by the magnitude and sign of the effective spin Hall angle of the NM. Our results can be utilized for ultrafast spintronic devices and tunable THz sources.

Evaluation Method for Fieldlike-Torque Efficiency by Modulation of the Resonance Field

Science.gov (United States)

Kim, Changsoo; Kim, Dongseuk; Chun, Byong Sun; Moon, Kyoung-Woong; Hwang, Chanyong

2018-05-01

The spin Hall effect has attracted a lot of interest in spintronics because it offers the possibility of a faster switching route with an electric current than with a spin-transfer-torque device. Recently, fieldlike spin-orbit torque has been shown to play an important role in the magnetization switching mechanism. However, there is no simple method for observing the fieldlike spin-orbit torque efficiency. We suggest a method for measuring fieldlike spin-orbit torque using a linear change in the resonance field in spectra of direct-current (dc)-tuned spin-torque ferromagnetic resonance. The fieldlike spin-orbit torque efficiency can be obtained in both a macrospin simulation and in experiments by simply subtracting the Oersted field from the shifted amount of resonance field. This method analyzes the effect of fieldlike torque using dc in a normal metal; therefore, only the dc resistivity and the dimensions of each layer are considered in estimating the fieldlike spin-torque efficiency. The evaluation of fieldlike-torque efficiency of a newly emerging material by modulation of the resonance field provides a shortcut in the development of an alternative magnetization switching device.

Spin-orbit torque in a thin film of the topological insulator Bi2Se3: Crossover from the ballistic to diffusive regime

Science.gov (United States)

Ren, Y. J.; Deng, W. Y.; Geng, H.; Shen, R.; Shao, L. B.; Sheng, L.; Xing, D. Y.

2017-12-01

The spin-orbit torque provides an efficient method for switching the direction of a magnetization by using an electric field. Owing to the spin-orbit coupling, when an electric field is applied, a nonequilibrium spin density is generated, which exerts a torque on the local magnetization. Here, we investigate the spin-orbit torque in a thin film of topological insulator \\text{Bi}2\\text{Se}3 based upon a Boltzmann equation, with proper boundary conditions, which is applicable from the ballistic regime to the diffusive regime. It is shown that due to the spin-momentum interlocking of the electron surface states, the magnitude of the field-like torque is simply in linear proportion to the longitudinal electrical current. For a fixed electric field, the spin-orbit torque is proportional to the sample length in the ballistic limit, and saturates to a constant in the diffusive limit. The dependence of the torque on the magnetization direction and exchange coupling strength is also studied. Our theory may offer useful guidance for experimental investigations of the spin-orbit torque in finite-size systems.

Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Luo, Linqiang, E-mail: LL6UK@virginia.edu [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Kabir, Mehdi [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Dao, Nam; Kittiwatanakul, Salinporn [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Cyberey, Michael [Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Institute of Defense Analyses, Alexandria, VA 22311 (United States); Stan, Mircea [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Lu, Jiwei [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States)

2017-06-15

Highlights: • 500 nm size nano-pillar device was fabricated by photolithography techniques. • A magnetic hybrid structure was achieved with perpendicular magnetic fields. • Spin torque switching and oscillation was demonstrated in the large sized device. • Micromagnetic simulations accurately reproduced the experimental results. • Simulations demonstrated the synchronization of magnetic inhomogeneities. - Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co{sub 90}Fe{sub 10}/Cu/Ni{sub 80}Fe{sub 20} pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co{sub 90}Fe{sub 10}) and free layer (Ni{sub 80}Fe{sub 20}) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. A magnetic hybrid structure was achieved for the study of spin torque oscillation by applying a perpendicular field >3 kOe. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogeneities in large sized device. The ability to manipulate spin-dynamics on large size devices could be proved useful for increasing the output power of the spin-transfer nano-oscillators (STNOs).

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Magnetization switching and microwave oscillations in nanomagnets driven by spin-polarized currents

International Nuclear Information System (INIS)

Bertotti, G.; Magni, A.; Serpico, C.; d'Aquino, M.; Mayergoyz, I. D.; Bonin, R.

2005-01-01

Full text: Considerable interest has been generated in recent years by the discovery that a current of spin-polarized electrons can apply appreciable torques to a nanoscale ferromagnet. This mechanism was theoretically predicted and subsequently confirmed by a number of experiments which have shown that spin transfer can indeed induce switching or microwave oscillations of the magnetization. Significant efforts have been devoted to the explanation of these results, in view of the new physics involved and of the possible applications to new types of current-controlled memory cells or microwave sources and resonators . However, the precise nature of magnetization dynamics when spin-polarized currents and external magnetic fields are simultaneously present has not yet been fully understood. The spin-transfer-driven nanomagnet is a nonlinear open system that is forced far from equilibrium by the injection of the current. Thus, the appropriate framework for the study of the problem is nonlinear dynamical system theory and bifurcation theory. In this talk, it is shown that within this framework the complexity and subtlety of spin-torque effects are fully revealed and quantified, once it is recognized that both intrinsic damping and spin transfer can be treated as perturbations of the free precessional dynamics typical of ferromagnetic resonance. Complete stability diagrams are derived for the case where spin torques and external magnetic fields are simultaneously present. Quantitative predictions are made for the critical currents and fields inducing magnetization switching; for the amplitude and frequency of magnetization self-oscillations; for the conditions leading to hysteretic transitions between self-oscillations and stationary states

Fast switching and signature of efficient domain wall motion driven by spin-orbit torques in a perpendicular anisotropy magnetic insulator/Pt bilayer

Science.gov (United States)

Avci, Can Onur; Rosenberg, Ethan; Baumgartner, Manuel; Beran, Lukáš; Quindeau, Andy; Gambardella, Pietro; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-08-01

We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. We first show that, with quasi-DC (10 ms) current pulses, SOT-induced switching can be achieved with an external field as low as 2 Oe, making TmIG an outstanding candidate to realize efficient switching in heterostructures that produce moderate stray fields without requiring an external field. We then demonstrate deterministic switching with fast current pulses (≤20 ns) with an amplitude of ˜1012 A/m2, similar to all-metallic structures. We reveal that, in the presence of an initially nucleated domain, the critical switching current is reduced by up to a factor of five with respect to the fully saturated initial state, implying efficient current-driven domain wall motion in this system. Based on measurements with 2 ns-long pulses, we estimate the domain wall velocity of the order of ˜400 m/s per j = 1012 A/m2.

Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

Science.gov (United States)

Kurebayashi, Daichi; Nomura, Kentaro

2016-10-01

We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

Spin-torque generation in topological insulator based heterostructures

KAUST Repository

Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah

2016-01-01

Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan; Wu, Jun; Li, Peng; Zhang, Qiang; Zhao, Yuelei; Manchon, Aurelien; Xiao, John Q.; Zhang, Xixiang

2017-01-01

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan

2017-03-07

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-01-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

Spin current and spin transfer torque in ferromagnet/superconductor spin valves

Science.gov (United States)

Moen, Evan; Valls, Oriol T.

2018-05-01

Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

Ultra-fast three terminal perpendicular spin-orbit torque MRAM (Presentation Recording)

Science.gov (United States)

Boulle, Olivier; Cubukcu, Murat; Hamelin, Claire; Lamard, Nathalie; Buda-Prejbeanu, Liliana; Mikuszeit, Nikolai; Garello, Kevin; Gambardella, Pietro; Langer, Juergen; Ocker, Berthold; Miron, Mihai; Gaudin, Gilles

2015-09-01

The discovery that a current flowing in a heavy metal can exert a torque on a neighboring ferromagnet has opened a new way to manipulate the magnetization at the nanoscale. This "spin orbit torque" (SOT) has been demonstrated in ultrathin magnetic multilayers with structural inversion asymmetry (SIA) and high spin orbit coupling, such as Pt/Co/AlOx multilayers. We have shown that this torque can lead to the magnetization switching of a perpendicularly magnetized nanomagnet by an in-plane current injection. The manipulation of magnetization by SOT has led to a novel concept of magnetic RAM memory, the SOT-MRAM, which combines non volatility, high speed, reliability and large endurance. These features make the SOT-MRAM a good candidate to replace SRAM for non-volatile cache memory application. We will present the proof of concept of a perpendicular SOT-MRAM cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction and demonstrate ultra-fast (down to 300 ps) deterministic bipolar magnetization switching. Macrospin and micromagnetic simulations including SOT cannot reproduce the experimental results, which suggests that additional physical mechanisms are at stacks. Our results show that SOT-MRAM is fast, reliable and low power, which is promising for non-volatile cache memory application. We will also discuss recent experiments of magnetization reversal in ultrathin multilayers Pt/Co/AlOx by very short (<200 ps) current pulses. We will show that in this material, the Dzyaloshinskii-Moryia interaction plays a key role in the reversal process.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

Science.gov (United States)

Hung, Yu-Ming

This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang; Wang, Xuhui; Manchon, Aurelien

2016-01-01

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang

2016-01-11

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Spin diffusion and torques in disordered antiferromagnets

KAUST Repository

Manchon, Aurelien

2017-02-01

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Spin diffusion and torques in disordered antiferromagnets

KAUST Repository

Manchon, Aurelien

2017-01-01

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

International Nuclear Information System (INIS)

Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

2003-01-01

We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

Spin-Stabilized Spacecrafts: Analytical Attitude Propagation Using Magnetic Torques

Directory of Open Access Journals (Sweden)

Roberta Veloso Garcia

2009-01-01

Full Text Available An analytical approach for spin-stabilized satellites attitude propagation is presented, considering the influence of the residual magnetic torque and eddy currents torque. It is assumed two approaches to examine the influence of external torques acting during the motion of the satellite, with the Earth's magnetic field described by the quadripole model. In the first approach is included only the residual magnetic torque in the motion equations, with the satellites in circular or elliptical orbit. In the second approach only the eddy currents torque is analyzed, with the satellite in circular orbit. The inclusion of these torques on the dynamic equations of spin stabilized satellites yields the conditions to derive an analytical solution. The solutions show that residual torque does not affect the spin velocity magnitude, contributing only for the precession and the drift of the spacecraft's spin axis and the eddy currents torque causes an exponential decay of the angular velocity magnitude. Numerical simulations performed with data of the Brazilian Satellites (SCD1 and SCD2 show the period that analytical solution can be used to the attitude propagation, within the dispersion range of the attitude determination system performance of Satellite Control Center of Brazil National Research Institute.

Mode coupling in spin torque oscillators

International Nuclear Information System (INIS)

Zhang, Steven S.-L.; Zhou, Yan; Li, Dong; Heinonen, Olle

2016-01-01

A number of recent experimental works have shown that the dynamics of a single spin torque oscillator can exhibit complex behavior that stems from interactions between two or more modes of the oscillator, such as observed mode-hopping or mode coexistence. There has been some initial work indicating how the theory for a single-mode (macro-spin) spin torque oscillator should be generalized to include several modes and the interactions between them. In the present work, we rigorously derive such a theory starting with the Landau–Lifshitz–Gilbert equation for magnetization dynamics by expanding up to third-order terms in deviation from equilibrium. Our results show how a linear mode coupling, which is necessary for observed mode-hopping to occur, arises through coupling to a magnon bath. The acquired temperature dependence of this coupling implies that the manifold of orbits and fixed points may shift with temperature. - Highlights: • Deriving equations for coupled modes in spin torque oscillators. • Including Hamiltonian formalism and elimination of three–magnon processes. • Thermal bath of magnons central to mode coupling. • Numerical examples of circular and elliptical devices.

Mode coupling in spin torque oscillators

Energy Technology Data Exchange (ETDEWEB)

Zhang, Steven S.-L., E-mail: ZhangShule@missouri.edu [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States); Zhou, Yan, E-mail: yanzhou@hku.hk [Department of Physics, The University of Hong Kong, Hong Kong (China); Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong (China); Li, Dong, E-mail: geodesic.ld@gmail.com [Department of Physics, Centre for Nonlinear Studies, and Beijing-Hong Kong-Singapore Joint Centre for Nonlinear and Complex Systems, Hong Kong Baptist University, Kowloon Tong, Hong Kong (China); Heinonen, Olle, E-mail: heinonen@anl.gov [Material Science Division, Argonne National Laboratory, Lemont, IL 60439 (United States); Northwestern-Argonne Institute of Science and Technology, 2145 Sheridan Road, Evanston, IL 60208 (United States); Computation Institute, The Unversity of Chicago, 5735 S Ellis Avenue, Chicago, IL 60637 (United States)

2016-09-15

A number of recent experimental works have shown that the dynamics of a single spin torque oscillator can exhibit complex behavior that stems from interactions between two or more modes of the oscillator, such as observed mode-hopping or mode coexistence. There has been some initial work indicating how the theory for a single-mode (macro-spin) spin torque oscillator should be generalized to include several modes and the interactions between them. In the present work, we rigorously derive such a theory starting with the Landau–Lifshitz–Gilbert equation for magnetization dynamics by expanding up to third-order terms in deviation from equilibrium. Our results show how a linear mode coupling, which is necessary for observed mode-hopping to occur, arises through coupling to a magnon bath. The acquired temperature dependence of this coupling implies that the manifold of orbits and fixed points may shift with temperature. - Highlights: • Deriving equations for coupled modes in spin torque oscillators. • Including Hamiltonian formalism and elimination of three–magnon processes. • Thermal bath of magnons central to mode coupling. • Numerical examples of circular and elliptical devices.

Parameter dependence of resonant spin torque magnetization reversal

International Nuclear Information System (INIS)

Fricke, L.; Serrano-Guisan, S.; Schumacher, H.W.

2012-01-01

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

Parameter dependence of resonant spin torque magnetization reversal

Science.gov (United States)

Fricke, L.; Serrano-Guisan, S.; Schumacher, H. W.

2012-04-01

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

Current induced torques and interfacial spin-orbit coupling: Semiclassical modeling

KAUST Repository

Haney, Paul M.

2013-05-07

In bilayer nanowires consisting of a ferromagnetic layer and a nonmagnetic layer with strong spin-orbit coupling, currents create torques on the magnetization beyond those found in simple ferromagnetic nanowires. The resulting magnetic dynamics appear to require torques that can be separated into two terms, dampinglike and fieldlike. The dampinglike torque is typically derived from models describing the bulk spin Hall effect and the spin transfer torque, and the fieldlike torque is typically derived from a Rashba model describing interfacial spin-orbit coupling. We derive a model based on the Boltzmann equation that unifies these approaches. We also consider an approximation to the Boltzmann equation, the drift-diffusion model, that qualitatively reproduces the behavior, but quantitatively differs in some regimes. We show that the Boltzmann equation with physically reasonable parameters can match the torques for any particular sample, but in some cases, it fails to describe the experimentally observed thickness dependencies.

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

Science.gov (United States)

Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong; Jo, Younghun; Park, Byong-Guk

2015-01-01

The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques. PMID:26423608

Spin-orbit torque in two-dimensional antiferromagnetic topological insulators

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2017-01-01

We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.

Spin-orbit torque in two-dimensional antiferromagnetic topological insulators

KAUST Repository

Ghosh, Sumit

2017-01-24

We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2016-07-12

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien

2016-01-01

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Zero-field precession and hysteretic threshold currents in a spin torque nano device with tilted polarizer

Energy Technology Data Exchange (ETDEWEB)

Zhou Yan; Bonetti, S; Zha, C L; Akerman, Johan [Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden)], E-mail: zhouyan@kth.se

2009-10-15

Using nonlinear system theory and numerical simulations, we map out the static and dynamic phase diagrams in the zero applied field of a spin torque nano device with a tilted polarizer (TP). We find that for sufficiently large currents, even very small tilt angles ({beta}>1 deg.) will lead to steady free layer precession in zero field. Within a rather large range of tilt angles, 1 deg. <{beta}<19 deg., we find coexisting static states and hysteretic switching between these using only current. In a more narrow window (1 deg. <{beta}<5 deg.) one of the static states turns into a limit cycle (precession). The coexistence of current-driven static and dynamic states in the zero magnetic field is unique to the TP device and leads to large hysteresis in the upper and lower threshold currents for its operation. The nano device with TP can facilitate the generation of large amplitude mode of spin torque signals without the need for cumbersome magnetic field sources and thus should be very important for future telecommunication applications based on spin transfer torque effects.

Torque for electron spin induced by electron permanent electric dipole moment

Energy Technology Data Exchange (ETDEWEB)

Senami, Masato, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Fukuda, Masahiro, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Ogiso, Yoji, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Tachibana, Akitomo, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)

2014-10-06

The spin torque of the electron is studied in relation to the electric dipole moment (EDM) of the electron. The spin dynamics is known to be given by the spin torque and the zeta force in quantum field theory. The effect of the EDM on the torque of the spin brings a new term in the equation of motion of the spin. We study this effect for a solution of the Dirac equation with electromagnetic field.

Magnetization reversal driven by a spin torque oscillator

Energy Technology Data Exchange (ETDEWEB)

Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123 Muscat (Oman)

2014-09-01

Magnetization reversal of a magnetic free layer under spin transfer torque (STT) effect from a magnetic hard layer with a fixed magnetization direction and an oscillating layer is investigated. By including STT from the oscillating layer with in-plane anisotropy and orthogonal polarizer, magnetization-time dependence of free layer is determined. The results show that the frequency and amplitude of oscillations can be varied by adjusting the current density and magnetic properties. For an optimal oscillation frequency (f{sub opt}), a reduction of the switching time (t{sub 0}) of the free layer is observed. Both f{sub opt} and t{sub 0} increase with the anisotropy field of the free layer.

Spin-transfer torque generated by a topological insulator

KAUST Repository

Mellnik, A. R.

2014-07-23

Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron\\' s spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications. © 2014 Macmillan Publishers Limited. All rights reserved.

Domain wall oscillations induced by spin torque in magnetic nanowires

Energy Technology Data Exchange (ETDEWEB)

Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat (Oman); Chantrell, R. W. [Department of Physics, University of York, York YO10 5DD (United Kingdom)

2015-02-07

Using micromagnetic simulations, the effects of the non-adiabatic spin torque (β) and the geometry of nanowires on domain wall (DW) dynamics are investigated. For the case of in-plane anisotropy nanowire, it is observed that the type of DW and its dynamics depends on its dimension. For a fixed length, the critical switching current decreases almost exponentially with the width W, while the DW speed becomes faster for larger W. For the case of perpendicular anisotropy nanowire, it was observed that DW dynamics depends strongly on β. For small values of β, oscillations of DW around the center of nanowire were revealed even after the current is switched off. In addition to nanowire geometry and intrinsic material properties, β could provide a way to control DW dynamics.

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian

2013-06-26

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian; Wang, Xuhui; Chshiev, Mairbek; Manchon, Aurelien

2013-01-01

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang

2005-01-01

Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift

Spin-orbit torques in magnetic bilayers

Science.gov (United States)

Haney, Paul

2015-03-01

Spintronics aims to utilize the coupling between charge transport and magnetic dynamics to develop improved and novel memory and logic devices. Future progress in spintronics may be enabled by exploiting the spin-orbit coupling present at the interface between thin film ferromagnets and heavy metals. In these systems, applying an in-plane electrical current can induce magnetic dynamics in single domain ferromagnets, or can induce rapid motion of domain wall magnetic textures. There are multiple effects responsible for these dynamics. They include spin-orbit torques and a chiral exchange interaction (the Dzyaloshinskii-Moriya interaction) in the ferromagnet. Both effects arise from the combination of ferromagnetism and spin-orbit coupling present at the interface. There is additionally a torque from the spin current flux impinging on the ferromagnet, arising from the spin hall effect in the heavy metal. Using a combination of approaches, from drift-diffusion to Boltzmann transport to first principles methods, we explore the relative contributions to the dynamics from these different effects. We additionally propose that the transverse spin current is locally enhanced over its bulk value in the vicinity of an interface which is oriented normal to the charge current direction.

Smooth torque speed characteristic of switched reluctance motors

DEFF Research Database (Denmark)

Zeng, Hui; Chen, Zhe; Chen, Hao

2014-01-01

The torque ripple of switched reluctance motors (SRMs) is the main disadvantage that limits the industrial application of these motors. Although several methods for smooth-toque operation (STO) have been proposed, STO works well only within a certain torque and speed range because...

A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

Science.gov (United States)

Lee, Seungyeon; Lee, Hyunjoo; Kim, Sojeong; Lee, Seungjun; Shin, Hyungsoon

2010-04-01

Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

International Nuclear Information System (INIS)

Aurelio, D.; Torres, L.; Finocchio, G.

2009-01-01

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

Analytic expression for the giant fieldlike spin torque in spin-filter magnetic tunnel junctions

Science.gov (United States)

Tang, Y.-H.; Huang, Z.-W.; Huang, B.-H.

2017-08-01

We propose analytic expressions for fieldlike, T⊥, and spin-transfer, T∥, spin torque components in the spin-filter-based magnetic tunnel junction (SFMTJ), by using the single-band tight-binding model with the nonequilibrium Keldysh formalism. In consideration of multireflection processes between noncollinear magnetization of the spin-filter (SF) barrier and the ferromagnetic (FM) electrode, the central spin-selective SF barrier plays an active role in the striking discovery T⊥≫T∥ , which can be further identified by the unusual barrier thickness dependence of giant T⊥. Our general expressions reveal the sinusoidal angular dependence of both spin torque components, even in the presence of the SF barrier.

Spin torque on the surface of graphene in the presence of spin orbit splitting

Directory of Open Access Journals (Sweden)

Ji Chen

2013-06-01

Full Text Available We study theoretically the spin transfer torque of a ferromagnetic layer coupled to (deposited onto a graphene surface in the presence of the Rashba spin orbit coupling (RSOC. We show that the RSOC induces an effective magnetic field, which will result in the spin precession of conduction electrons. We derive correspondingly the generalized Landau-Lifshitz-Gilbert (LLG equation, which describes the precessional motion of local magnetization under the influence of the spin orbit effect. Our theoretical estimate indicates that the spin orbit spin torque may have significant effect on the magnetization dynamics of the ferromagnetic layer coupled to the graphene surface.

A non-unity torque sharing function for torque ripple minimization of switched reluctance generators

DEFF Research Database (Denmark)

Park, Kiwoo; Liu, Xiao; Chen, Zhe

2013-01-01

This paper presents a new torque ripple minimization technique for a Switched Reluctance Generator (SRG). Although the SRG has many advantageous characteristics as a generator, it has not been widely employed in the industry. One of the most notorious disadvantages of the SRG is its high torque...

Spin-Orbit Torques in Co/Pd Multilayer Nanowires

KAUST Repository

Jamali, Mahdi; Narayanapillai, Kulothungasagaran; Qiu, Xuepeng; Loong, Li Ming; Manchon, Aurelien; Yang, Hyunsoo

2013-01-01

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 108  A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1  nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

Spin-Orbit Torques in Co/Pd Multilayer Nanowires

KAUST Repository

Jamali, Mahdi

2013-12-09

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 108  A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1  nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

2017-01-01

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

Research Update: Spin transfer torques in permalloy on monolayer MoS2

Directory of Open Access Journals (Sweden)

Wei Zhang

2016-03-01

Full Text Available We observe current induced spin transfer torque resonance in permalloy (Py grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Therefore our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.

Few-nanosecond pulse switching with low write error for in-plane nanomagnets using the spin-Hall effect

Science.gov (United States)

Aradhya, Sriharsha; Rowlands, Graham; Shi, Shengjie; Oh, Junseok; Ralph, D. C.; Buhrman, Robert

Magnetic random access memory (MRAM) using spin transfer torques (STT) holds great promise for replacing existing best-in-class memory technologies in several application domains. Research on conventional two-terminal STT-MRAM thus far has revealed the existence of limitations that constrain switching reliability and speed for both in-plane and perpendicularly magnetized devices. Recently, spin torque arising from the giant spin-Hall effect in Ta, W and Pt has been shown to be an efficient mechanism to switch magnetic bits in a three-terminal geometry. Here we report highly reliable, nanosecond timescale pulse switching of three-terminal devices with in-plane magnetized magnetic tunnel junctions. We obtain write error rates (WER) down to ~10-5 using pulses as short as 2 ns, in contrast to conventional in-plane STT-MRAM devices where write speeds were limited to a few tens of nanoseconds for comparable WER. Utilizing micro-magnetic simulations, we discuss the differences from conventional MRAM that allow for this unanticipated and significant performance improvement. Finally, we highlight the path towards practical application enabled by the ability to separately optimize the read and write pathways in three-terminal devices.

Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy

Science.gov (United States)

Nguyen, Minh-Hai; Shi, Shengjie; Rowlands, Graham E.; Aradhya, Sriharsha V.; Jermain, Colin L.; Ralph, D. C.; Buhrman, R. A.

2018-02-01

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies.

Review of an emerging research field 'spin-orbit torques'

International Nuclear Information System (INIS)

Kurebayashi, Hidekazu

2015-01-01

This Review will provide a landscape of the recent development of one of spintronics sub-fields, so-called 'spin orbit torques'. This new class of spin torques, arising from the relativistic spin-orbit interaction in solid states, has gained a great deal of academic interest from relevant scientists and technologists. (author)

Resonant Spin-Transfer-Torque Nano-Oscillators

Science.gov (United States)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2017-12-01

Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional inductor-based voltage-controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions, which have the disadvantages of low power outputs and poor conversion efficiencies. We theoretically propose using resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present viable device designs geared toward a high microwave output power and an efficient conversion of the dc input power. We attribute these robust qualities to the resulting nontrivial spin-current profiles and the ultrahigh tunnel magnetoresistance, both of which arise from resonant spin filtering. The device designs are based on the nonequilibrium Green's-function spin-transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation and Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around 1150% and an efficiency enhancement of over 1100% compared to typical trilayer designs. We rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. We also demonstrate the robustness of our structures against device design fluctuations and elastic dephasing. This work sets the stage for pentalyer spin-transfer-torque nano-oscillator device designs that ameliorate major issues associated with typical trilayer designs.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

International Nuclear Information System (INIS)

Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

2015-01-01

We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

Skyrmionic spin Seebeck effect via dissipative thermomagnonic torques

Science.gov (United States)

Kovalev, Alexey A.

2014-06-01

We derive thermomagnonic torque and its "β-type" dissipative correction from the stochastic Landau-Lifshitz-Gilbert equation. The β-type dissipative correction describes viscous coupling between magnetic dynamics and magnonic current and it stems from spin mistracking of the magnetic order. We show that thermomagnonic torque is important for describing temperature gradient induced motion of skyrmions in helical magnets while dissipative correction plays an essential role in generating transverse Magnus force. We propose to detect such skyrmionic motion by employing the transverse spin Seebeck effect geometry.

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

International Nuclear Information System (INIS)

Wilczynski, M.

2011-01-01

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

Next generation spin torque memories

CERN Document Server

Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

2017-01-01

This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

Spin-transfer torque generated by a topological insulator

KAUST Repository

Mellnik, A. R.; Lee, Joonsue; Richardella, Anthony R.; Grab, J. L.; Mintun, P. J.; Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eunah; Samarth, Nitin S.; Ralph, Daniel C.

2014-01-01

permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque

Investigating spin-transfer torques induced by thermal gradients in magnetic tunnel junctions by using micro-cavity ferromagnetic resonance

Science.gov (United States)

Cansever, H.; Narkowicz, R.; Lenz, K.; Fowley, C.; Ramasubramanian, L.; Yildirim, O.; Niesen, A.; Huebner, T.; Reiss, G.; Lindner, J.; Fassbender, J.; Deac, A. M.

2018-06-01

Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the barrier of a magnetic tunnel junction may induce pure spin-currents and generate ‘thermal’ spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nano-sized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6  ×  9 µm2 ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Science.gov (United States)

Fukami, Shunsuke; Ohno, Hideo

2017-08-01

Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.

2015-09-21

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

Dynamics of magnetization in ferromagnet with spin-transfer torque

Science.gov (United States)

Li, Zai-Dong; He, Peng-Bin; Liu, Wu-Ming

2014-11-01

We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effective field and the Gilbert damping term different from the common understanding. When the spin current exceeds the critical value, the conjunctive action of Gilbert damping and spin-transfer torque leads naturally the novel screw-pitch effect characterized by the temporal oscillation of domain wall velocity and width. Driven by space- and time-dependent spin-polarized current and magnetic field, we expatiate the formation of domain wall velocity in ferromagnetic nanowire. We discuss the properties of dynamic magnetic soliton in uniaxial anisotropic ferromagnetic nanowire driven by spin-transfer torque, and analyze the modulation instability and dark soliton on the spin wave background, which shows the characteristic breather behavior of the soliton as it propagates along the ferromagnetic nanowire. With stronger breather character, we get the novel magnetic rogue wave and clarify its formation mechanism. The generation of magnetic rogue wave mainly arises from the accumulation of energy and magnons toward to its central part. We also observe that the spin-polarized current can control the exchange rate of magnons between the envelope soliton and the background, and the critical current condition is obtained analytically. At last, we have theoretically investigated the current-excited and frequency-adjusted ferromagnetic resonance in magnetic trilayers. A particular case of the perpendicular analyzer reveals that the ferromagnetic resonance curves, including the resonant location and the resonant linewidth, can be adjusted by changing the pinned magnetization direction and the direct current. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out

Optimum geometry for torque ripple minimization of switched reluctance motors

NARCIS (Netherlands)

Sahin, F.; Ertan, H.B.; Leblebicioglu, K.

2000-01-01

For switched reluctance motors, one of the major problems is torque ripple which causes increased undesirable acoustic noise and possibly speed ripple. This paper describes an approach to determine optimum magnetic circuit parameters to minimize low speed torque ripple for such motors. The

Heterostructures for Realizing Magnon-Induced Spin Transfer Torque

Directory of Open Access Journals (Sweden)

P. B. Jayathilaka

2012-01-01

Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

Science.gov (United States)

Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.

2018-04-01

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

Intraband and interband spin-orbit torques in noncentrosymmetric ferromagnets

KAUST Repository

Li, Hang; Gao, H.; Zâ rbo, Liviu P.; Vý borný , K.; Wang, Xuhui; Garate, Ion; Dogan, Fatih; Čejchan, A.; Sinova, Jairo; Jungwirth, T.; Manchon, Aurelien

2015-01-01

Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using the Kubo formula. In addition to the current-driven fieldlike torque TFL=τFLm×uso (uso being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form TDL=τDLm×(uso×m). Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchange coupled to the Mn moments. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described.

Intraband and interband spin-orbit torques in noncentrosymmetric ferromagnets

KAUST Repository

Li, Hang

2015-04-01

Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using the Kubo formula. In addition to the current-driven fieldlike torque TFL=τFLm×uso (uso being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form TDL=τDLm×(uso×m). Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchange coupled to the Mn moments. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described.

Enhanced Spin-Orbit Torque via Modulation of Spin Current Absorption

KAUST Repository

Qiu, Xuepeng

2016-11-18

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.

Investigating and engineering spin-orbit torques in heavy metal/Co2FeAl0.5Si0.5/MgO thin film structures

International Nuclear Information System (INIS)

Loong, Li Ming; Deorani, Praveen; Qiu, Xuepeng; Yang, Hyunsoo

2015-01-01

Current-induced spin-orbit torques (SOTs) have the potential to revolutionize magnetization switching technology. Here, we investigate SOT in a heavy metal (HM)/Co 2 FeAl 0.5 Si 0.5 (CFAS)/MgO thin film structure with perpendicular magnetic anisotropy (PMA), where the HM is either Pt or Ta. Our results suggest that both the spin Hall effect and the Rashba effect contribute significantly to the effective fields in the Pt underlayer samples. Moreover, after taking the PMA energies into account, current-induced SOT-based switching studies of both the Pt and Ta underlayer samples suggest that the two HM underlayers yield comparable switching efficiency in the HM/CFAS/MgO material system

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien; Zhang, S.; Lee, K.-J.

2010-01-01

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien

2010-11-15

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Torque Coordination Control during Braking Mode Switch for a Plug-in Hybrid Electric Vehicle

Directory of Open Access Journals (Sweden)

Yang Yang

2017-10-01

Full Text Available Hybrid vehicles usually have several braking systems, and braking mode switches are significant events during braking. It is difficult to coordinate torque fluctuations caused by mode switches because the dynamic characteristics of braking systems are different. In this study, a new type of plug-in hybrid vehicle is taken as the research object, and braking mode switches are divided into two types. The control strategy of type one is achieved by controlling the change rates of clutch hold-down and motor braking forces. The control strategy of type two is achieved by simultaneously changing the target braking torque during different mode switch stages and controlling the motor to participate in active coordination control. Finally, the torque coordination control strategy is modeled in MATLAB/Simulink, and the results show that the proposed control strategy has a good effect in reducing the braking torque fluctuation and vehicle shocks during braking mode switches.

Electrical switching of antiferromagnets via strongly spin-orbit coupled materials

Science.gov (United States)

Li, Xi-Lai; Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook

2017-01-01

Electrically controlled ultra-fast switching of an antiferromagnet (AFM) is shown to be realizable by interfacing it with a material of strong spin-orbit coupling. The proximity interaction between the sublattice magnetic moments of a layered AFM and the spin-polarized free electrons at the interface offers an efficient way to manipulate antiferromagnetic states. A quantitative analysis, using the combination with a topological insulator as an example, demonstrates highly reliable 90° and 180° rotations of AFM magnetic states under two different mechanisms of effective torque generation at the interface. The estimated switching speed and energy requirement are in the ps and aJ ranges, respectively, which are about two-three orders of magnitude better than the ferromagnetic counterparts. The observed differences in the magnetization dynamics may explain the disparate characteristic responses. Unlike the usual precessional/chiral motions in the ferromagnets, those of the AFMs can essentially be described as a damped oscillator with a more direct path. The impact of random thermal fluctuations is also examined.

Synchronization of spin torque nano-oscillators through dipolar interactions

International Nuclear Information System (INIS)

Chen, Hao-Hsuan; Wu, Jong-Ching; Horng, Lance; Lee, Ching-Ming; Chang, Ching-Ray; Chang, Jui-Hang

2014-01-01

In an array of spin-torque nano-oscillators (STNOs) that combine a perpendicular polarized fixed layer with strong in-plane anisotropy in the free layers, magnetic dipolar interactions can effectively phase-lock the array, thus further enhancing the power of the output microwave signals. We perform a qualitative analysis of the synchronization of an array based on the Landau-Lifshitz-Gilbert equation, with a spin-transfer torque that assumes strong in-plane anisotropy. Finally, we present the numerical results for four coupled STNOs to provide further evidence for the proposed theory

Synchronization of spin torque nano-oscillators through dipolar interactions

Energy Technology Data Exchange (ETDEWEB)

Chen, Hao-Hsuan, E-mail: d95222014@ntu.edu.tw; Wu, Jong-Ching, E-mail: phjcwu@cc.ncue.edu.tw; Horng, Lance [Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Lee, Ching-Ming [Graduate School of Materials Science, National Yunlin University of Science and Technology, Douliou, 64002, Taiwan (China); Chang, Ching-Ray, E-mail: crchang@phys.ntu.edu.tw; Chang, Jui-Hang [Department of Physics and Center for Quantum Sciences and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2014-04-07

In an array of spin-torque nano-oscillators (STNOs) that combine a perpendicular polarized fixed layer with strong in-plane anisotropy in the free layers, magnetic dipolar interactions can effectively phase-lock the array, thus further enhancing the power of the output microwave signals. We perform a qualitative analysis of the synchronization of an array based on the Landau-Lifshitz-Gilbert equation, with a spin-transfer torque that assumes strong in-plane anisotropy. Finally, we present the numerical results for four coupled STNOs to provide further evidence for the proposed theory.

Soft controller switching technique to minimize the torque and current pulsations of a SCIM during its reswitching

International Nuclear Information System (INIS)

Larik, A.S.

2010-01-01

The direct-on-line starting of induction motor draws heavy current and to limit this Inrush current to a safe level normally a star-delta switch is used. However, the switching over from star to delta causes over current transients and this leads to torque pulsations. Therefore, in this paper the current and torque pulsations developed during the switching process are focused and a soft-switched controller is devised to minimize the re-closure transient currents and torque pulsations during star-delta switching of induction motor. The designed system can readily handles the sensing of favorable conditions of re closure of a switched-off running induction motor and it minimizes the inrush current and hence the pulsations of torque of all types of induction motors, whether, single-phase or three phase. An investigation is made into the transient currents and pulsation torques generated due to opening the circuit of a running induction motor and the switching pattern of star-delta switching. The re-switching control scheme for the induction motor is practically tested in the laboratory with and without soft controller. (author)

Spin orbit torque based electronic neuron

Energy Technology Data Exchange (ETDEWEB)

Sengupta, Abhronil, E-mail: asengup@purdue.edu; Choday, Sri Harsha; Kim, Yusung; Roy, Kaushik [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2015-04-06

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step switching scheme, a charge current places the magnetization of a nano-magnet along the hard-axis, i.e., an unstable point for the magnet. In the second step, the SOT device (neuron) receives a current (from the synapses) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the synaptic current encodes the excitatory and inhibitory nature of the neuron input and determines the final orientation of the magnetization. A resistive crossbar array, functioning as synapses, generates a bipolar current that is a weighted sum of the inputs. The simulation of a two layer feed-forward artificial neural network based on the SOT electronic neuron shows that it consumes ∼3× lower power than a 45 nm digital CMOS implementation, while reaching ∼80% accuracy in the classification of 100 images of handwritten digits from the MNIST dataset.

Spin orbit torque based electronic neuron

International Nuclear Information System (INIS)

Sengupta, Abhronil; Choday, Sri Harsha; Kim, Yusung; Roy, Kaushik

2015-01-01

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step switching scheme, a charge current places the magnetization of a nano-magnet along the hard-axis, i.e., an unstable point for the magnet. In the second step, the SOT device (neuron) receives a current (from the synapses) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the synaptic current encodes the excitatory and inhibitory nature of the neuron input and determines the final orientation of the magnetization. A resistive crossbar array, functioning as synapses, generates a bipolar current that is a weighted sum of the inputs. The simulation of a two layer feed-forward artificial neural network based on the SOT electronic neuron shows that it consumes ∼3× lower power than a 45 nm digital CMOS implementation, while reaching ∼80% accuracy in the classification of 100 images of handwritten digits from the MNIST dataset

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.

Science.gov (United States)

Bodnar, S Yu; Šmejkal, L; Turek, I; Jungwirth, T; Gomonay, O; Sinova, J; Sapozhnik, A A; Elmers, H-J; Kläui, M; Jourdan, M

2018-01-24

Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn 2 Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn 2 Au(001) thin films were generated by pulse current densities of ≃10 7  A/cm 2 . The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.

High-efficiency control of spin-wave propagation in ultra-thin yttrium iron garnet by the spin-orbit torque

Energy Technology Data Exchange (ETDEWEB)

Evelt, M.; Demidov, V. E., E-mail: demidov@uni-muenster.de [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, 48149 Muenster (Germany); Bessonov, V. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg 620041 (Russian Federation); Demokritov, S. O. [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, 48149 Muenster (Germany); M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg 620041 (Russian Federation); Prieto, J. L. [Instituto de Sistemas Optoelectrónicos y Microtecnologa (UPM), Ciudad Universitaria, Madrid 28040 (Spain); Muñoz, M. [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), PTM, E-28760 Tres Cantos, Madrid (Spain); Ben Youssef, J. [Laboratoire de Magnétisme de Bretagne CNRS, Université de Bretagne Occidentale, 29285 Brest (France); Naletov, V. V. [Service de Physique de l' État Condensé, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette (France); Institute of Physics, Kazan Federal University, Kazan 420008 (Russian Federation); Loubens, G. de [Service de Physique de l' État Condensé, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette (France); Klein, O. [INAC-SPINTEC, CEA/CNRS and Univ. Grenoble Alpes, 38000 Grenoble (France); Collet, M.; Garcia-Hernandez, K.; Bortolotti, P.; Cros, V.; Anane, A. [Unité Mixte de Physique CNRS, Thales, Univ. Paris Sud, Université Paris-Saclay, 91767 Palaiseau (France)

2016-04-25

We study experimentally with submicrometer spatial resolution the propagation of spin waves in microscopic waveguides based on the nanometer-thick yttrium iron garnet and Pt layers. We demonstrate that by using the spin-orbit torque, the propagation length of the spin waves in such systems can be increased by nearly a factor of 10, which corresponds to the increase in the spin-wave intensity at the output of a 10 μm long transmission line by three orders of magnitude. We also show that, in the regime, where the magnetic damping is completely compensated by the spin-orbit torque, the spin-wave amplification is suppressed by the nonlinear scattering of the coherent spin waves from current-induced excitations.

High-efficiency control of spin-wave propagation in ultra-thin yttrium iron garnet by the spin-orbit torque

International Nuclear Information System (INIS)

Evelt, M.; Demidov, V. E.; Bessonov, V.; Demokritov, S. O.; Prieto, J. L.; Muñoz, M.; Ben Youssef, J.; Naletov, V. V.; Loubens, G. de; Klein, O.; Collet, M.; Garcia-Hernandez, K.; Bortolotti, P.; Cros, V.; Anane, A.

2016-01-01

We study experimentally with submicrometer spatial resolution the propagation of spin waves in microscopic waveguides based on the nanometer-thick yttrium iron garnet and Pt layers. We demonstrate that by using the spin-orbit torque, the propagation length of the spin waves in such systems can be increased by nearly a factor of 10, which corresponds to the increase in the spin-wave intensity at the output of a 10 μm long transmission line by three orders of magnitude. We also show that, in the regime, where the magnetic damping is completely compensated by the spin-orbit torque, the spin-wave amplification is suppressed by the nonlinear scattering of the coherent spin waves from current-induced excitations.

Negative optical spin torque wrench of a non-diffracting non-paraxial fractional Bessel vortex beam

International Nuclear Information System (INIS)

Mitri, F.G.

2016-01-01

An absorptive Rayleigh dielectric sphere in a non-diffracting non-paraxial fractional Bessel vortex beam experiences a spin torque. The axial and transverse radiation spin torque components are evaluated in the dipole approximation using the radiative correction of the electric field. Particular emphasis is given on the polarization as well as changing the topological charge α and the half-cone angle of the beam. When α is zero, the axial spin torque component vanishes. However, when α becomes a real positive number, the vortex beam induces left-handed (negative) axial spin torque as the sphere shifts off-axially from the center of the beam. The results show that a non-diffracting non-paraxial fractional Bessel vortex beam is capable of inducing a spin reversal of an absorptive Rayleigh sphere placed arbitrarily in its path. Potential applications are yet to be explored in particle manipulation, rotation in optical tweezers, optical tractor beams, and the design of optically-engineered metamaterials to name a few areas. - Highlights: • Optical nondiffracting nonparaxial fractional Bessel vortex beam is considered. • Negative spin torque on an absorptive dielectric Rayleigh sphere is predicted numerically. • Negative spin torque occurs as the sphere departs from the center of the beam.

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

Science.gov (United States)

Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei

2018-05-01

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

Toward error-free scaled spin torque majority gates

Energy Technology Data Exchange (ETDEWEB)

Vaysset, Adrien; Manfrini, Mauricio; Pourtois, Geoffrey; Radu, Iuliana P.; Thean, Aaron [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

2016-06-15

The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

Toward error-free scaled spin torque majority gates

Directory of Open Access Journals (Sweden)

Adrien Vaysset

2016-06-01

Full Text Available The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

Directory of Open Access Journals (Sweden)

Hyein Lim

2013-01-01

Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

Synchronization of propagating spin-wave modes in a double-contact spin-torque oscillator: A micromagnetic study

International Nuclear Information System (INIS)

Puliafito, V.; Consolo, G.; Lopez-Diaz, L.; Azzerboni, B.

2014-01-01

This work tackles theoretical investigations on the synchronization of spin-wave modes generated by spin-transfer-torque in a double nano-contact geometry. The interaction mechanisms between the resulting oscillators are analyzed in the case of propagating modes which are excited via a normal-to-plane magnetic bias field. To characterize the underlying physical mechanisms, a multi-domain analysis is performed. It makes use of an equivalent electrical circuit, to deduce the output electrical power, and of micromagnetic simulations, through which information on the frequency spectra and on the spatial distribution of the wavefront of the emitted spin-waves is extracted. This study provides further and intriguing insights into the physical mechanisms giving rise to synchronization of spin-torque oscillators

First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions

Science.gov (United States)

Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano

2017-02-01

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

Investigating and engineering spin-orbit torques in heavy metal/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5}/MgO thin film structures

Energy Technology Data Exchange (ETDEWEB)

Loong, Li Ming; Deorani, Praveen; Qiu, Xuepeng; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2015-07-13

Current-induced spin-orbit torques (SOTs) have the potential to revolutionize magnetization switching technology. Here, we investigate SOT in a heavy metal (HM)/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS)/MgO thin film structure with perpendicular magnetic anisotropy (PMA), where the HM is either Pt or Ta. Our results suggest that both the spin Hall effect and the Rashba effect contribute significantly to the effective fields in the Pt underlayer samples. Moreover, after taking the PMA energies into account, current-induced SOT-based switching studies of both the Pt and Ta underlayer samples suggest that the two HM underlayers yield comparable switching efficiency in the HM/CFAS/MgO material system.

Out-of-plane spin-transfer torques: First-principles study

Czech Academy of Sciences Publication Activity Database

Carva, K.; Turek, Ilja

2010-01-01

Roč. 322, 9-12 (2010), s. 1085-1087 ISSN 0304-8853. [Joint European Magnetic Symposia /4./. Dublin, 14.09.2008-19.09.2008] Institutional research plan: CEZ:AV0Z20410507 Keywords : spin-transfer torque * spin-mixing conductance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.689, year: 2010

Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun; Mann, Maxwell; Beach, Geoffrey S. D., E-mail: gbeach@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2016-06-06

We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

High frequency spin torque oscillators with composite free layer spin valve

International Nuclear Information System (INIS)

Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

2016-01-01

We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

High frequency spin torque oscillators with composite free layer spin valve

Energy Technology Data Exchange (ETDEWEB)

Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

2016-07-15

We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

Spin transfer torque generated magnetic droplet solitons (invited)

International Nuclear Information System (INIS)

Chung, S.; Mohseni, S. M.; Sani, S. R.; Iacocca, E.; Dumas, R. K.; Pogoryelov, Ye.; Anh Nguyen, T. N.; Muduli, P. K.; Eklund, A.; Hoefer, M.; Åkerman, J.

2014-01-01

We present recent experimental and numerical advancements in the understanding of spin transfer torque generated magnetic droplet solitons. The experimental work focuses on nano-contact spin torque oscillators (NC-STOs) based on orthogonal (pseudo) spin valves where the Co fixed layer has an easy-plane anisotropy, and the [Co/Ni] free layer has a strong perpendicular magnetic anisotropy. The NC-STO resistance and microwave signal generation are measured simultaneously as a function of drive current and applied perpendicular magnetic field. Both exhibit dramatic transitions at a certain current dependent critical field value, where the microwave frequency drops 10 GHz, modulation sidebands appear, and the resistance exhibits a jump, while the magnetoresistance changes sign. We interpret these observations as the nucleation of a magnetic droplet soliton with a large fraction of its magnetization processing with an angle greater than 90°, i.e., around a direction opposite that of the applied field. This interpretation is corroborated by numerical simulations. When the field is further increased, we find that the droplet eventually collapses under the pressure from the Zeeman energy

Local spin torque induced by electron electric dipole moment in the YbF molecule

Energy Technology Data Exchange (ETDEWEB)

Fukuda, Masahiro; Senami, Masato; Ogiso, Yoji; Tachibana, Akitomo [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)

2014-10-06

In this study, we show the modification of the equation of motion of the electronic spin, which is derived by the quantum electron spin vorticity principle, by the effect of the electron electric dipole moment (EDM). To investigate the new contribution to spin torque by EDM, using first principle calculations, we visualize distributions of the local spin angular momentum density and local spin torque density of the YbF molecule on which the static electric field and magnetic field are applied at t = 0.

Lateral spin transfer torque induced magnetic switching at room temperature demonstrated by x-ray microscopy

Science.gov (United States)

Buhl, M.; Erbe, A.; Grebing, J.; Wintz, S.; Raabe, J.; Fassbender, J.

2013-10-01

Changing and detecting the orientation of nanomagnetic structures, which can be used for durable information storage, needs to be developed towards true nanoscale dimensions for keeping up the miniaturization speed of modern nanoelectronic components. Therefore, new concepts for controlling the state of nanomagnets are currently in the focus of research in the field of nanoelectronics. Here, we demonstrate reproducible switching of a purely metallic nanopillar placed on a lead that conducts a spin-polarized current at room temperature. Spin diffusion across the metal-metal (Cu to CoFe) interface between the pillar and the lead causes spin accumulation in the pillar, which may then be used to set the magnetic orientation of the pillar. In our experiments, the detection of the magnetic state of the nanopillar is performed by direct imaging via scanning transmission x-ray microscopy (STXM).

Spin force and torque in non-relativistic Dirac oscillator on a sphere

Science.gov (United States)

Shikakhwa, M. S.

2018-03-01

The spin force operator on a non-relativistic Dirac oscillator (in the non-relativistic limit the Dirac oscillator is a spin one-half 3D harmonic oscillator with strong spin-orbit interaction) is derived using the Heisenberg equations of motion and is seen to be formally similar to the force by the electromagnetic field on a moving charged particle. When confined to a sphere of radius R, it is shown that the Hamiltonian of this non-relativistic oscillator can be expressed as a mere kinetic energy operator with an anomalous part. As a result, the power by the spin force and torque operators in this case are seen to vanish. The spin force operator on the sphere is calculated explicitly and its torque is shown to be equal to the rate of change of the kinetic orbital angular momentum operator, again with an anomalous part. This, along with the conservation of the total angular momentum, suggests that the spin force exerts a spin-dependent torque on the kinetic orbital angular momentum operator in order to conserve total angular momentum. The presence of an anomalous spin part in the kinetic orbital angular momentum operator gives rise to an oscillatory behavior similar to the Zitterbewegung. It is suggested that the underlying physics that gives rise to the spin force and the Zitterbewegung is one and the same in NRDO and in systems that manifest spin Hall effect.

Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2017-01-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit

2017-11-29

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

Negative optical spin torque wrench of a non-diffracting non-paraxial fractional Bessel vortex beam

Science.gov (United States)

Mitri, F. G.

2016-10-01

An absorptive Rayleigh dielectric sphere in a non-diffracting non-paraxial fractional Bessel vortex beam experiences a spin torque. The axial and transverse radiation spin torque components are evaluated in the dipole approximation using the radiative correction of the electric field. Particular emphasis is given on the polarization as well as changing the topological charge α and the half-cone angle of the beam. When α is zero, the axial spin torque component vanishes. However, when α becomes a real positive number, the vortex beam induces left-handed (negative) axial spin torque as the sphere shifts off-axially from the center of the beam. The results show that a non-diffracting non-paraxial fractional Bessel vortex beam is capable of inducing a spin reversal of an absorptive Rayleigh sphere placed arbitrarily in its path. Potential applications are yet to be explored in particle manipulation, rotation in optical tweezers, optical tractor beams, and the design of optically-engineered metamaterials to name a few areas.

Simulation of stress-modulated magnetization precession frequency in Heusler-based spin torque oscillator

International Nuclear Information System (INIS)

Huang, Houbing; Zhao, Congpeng; Ma, Xingqiao

2017-01-01

We investigated stress-modulated magnetization precession frequency in Heusler-based spin transfer torque oscillator by combining micromagnetic simulations with phase field microelasticity theory, by encapsulating the magnetic tunnel junction into multilayers structures. We proposed a novel method of using an external stress to control the magnetization precession in spin torque oscillator instead of an external magnetic field. The stress-modulated magnetization precession frequency can be linearly modulated by externally applied uniaxial in-plane stress, with a tunable range 4.4–7.0 GHz under the stress of 10 MPa. By comparison, the out-of-plane stress imposes negligible influence on the precession frequency due to the large out-of-plane demagnetization field. The results offer new inspiration to the design of spin torque oscillator devices that simultaneously process high frequency, narrow output band, and tunable over a wide range of frequencies via external stress. - Highlights: • We proposed stress-modulated magnetization precession in spin torque oscillator. • The magnetization precession frequency can be linearly modulated by in-plane stress. • The stress also can widen the magnetization frequency range 4.4–7.0 GHz. • The stress-modulated oscillation frequency can simplify STO devices.

Simulation of stress-modulated magnetization precession frequency in Heusler-based spin torque oscillator

Energy Technology Data Exchange (ETDEWEB)

Huang, Houbing, E-mail: hbhuang@ustb.edu.cn; Zhao, Congpeng; Ma, Xingqiao, E-mail: xqma@sas.ustb.edu.cn

2017-03-15

We investigated stress-modulated magnetization precession frequency in Heusler-based spin transfer torque oscillator by combining micromagnetic simulations with phase field microelasticity theory, by encapsulating the magnetic tunnel junction into multilayers structures. We proposed a novel method of using an external stress to control the magnetization precession in spin torque oscillator instead of an external magnetic field. The stress-modulated magnetization precession frequency can be linearly modulated by externally applied uniaxial in-plane stress, with a tunable range 4.4–7.0 GHz under the stress of 10 MPa. By comparison, the out-of-plane stress imposes negligible influence on the precession frequency due to the large out-of-plane demagnetization field. The results offer new inspiration to the design of spin torque oscillator devices that simultaneously process high frequency, narrow output band, and tunable over a wide range of frequencies via external stress. - Highlights: • We proposed stress-modulated magnetization precession in spin torque oscillator. • The magnetization precession frequency can be linearly modulated by in-plane stress. • The stress also can widen the magnetization frequency range 4.4–7.0 GHz. • The stress-modulated oscillation frequency can simplify STO devices.

Mechanical torques generated by optically pumped atomic spin relaxation at surfaces

International Nuclear Information System (INIS)

Herman, R.M.

1982-01-01

It is argued that a valuable method of observing certain types of surface-atom interactions may lie in mechanical torques generated through the spin-orbit relaxation of valence electronic spins of optically pumped atoms at surfaces. The unusual feature of this phenomenon is that the less probable spin-orbit relaxation becomes highly visible as compared with the much more rapid paramagnetic relaxation, because of an enhancement, typically by as much as a factor 10 9 , in the torques delivered to mechanical structures, by virtue of a very large effective moment arm. Spin-orbit relaxation operates through an exchange of translational momentum which, in turn, can be identified with the delivery of a gigantic angular momentum (in units of h) relative to a distant axis about which mechanical motion is referred. The spin-orbit relaxation strongly depends upon the atomic number of the surface atoms and the strength of interaction with the optically pumped atoms. Being dominated by high-atomic-number surface atoms, spin-orbit relaxation rates may not be too strongly influenced by minor surface contamination of lighter-weight optically active atoms

Mechanical torques generated by optically pumped atomic spin relaxation at surfaces

Science.gov (United States)

Herman, R. M.

1982-03-01

It is argued that a valuable method of observing certain types of surface-atom interactions may lie in mechanical torques generated through the spin-orbit relaxation of valence electronic spins of optically pumped atoms at surfaces. The unusual feature of this phenomenon is that the less probable spin-orbit relaxation becomes highly visible as compared with the much more rapid paramagnetic relaxation, because of an enhancement, typically by as much as a factor 109, in the torques delivered to mechanical structures, by virtue of a very large effective moment arm. Spin-orbit relaxation operates through an exchange of translational momentum which, in turn, can be identified with the delivery of a gigantic angular momentum (in units of ℏ) relative to a distant axis about which mechanical motion is referred. The spin-orbit relaxation strongly depends upon the atomic number of the surface atoms and the strength of interaction with the optically pumped atoms. Being dominated by high-atomic-number surface atoms, spin-orbit-relaxation rates may not be too strongly influenced by minor surface contamination of lighter-weight optically active atoms.

Role of phase breaking processes on resonant spin transfer torque nano-oscillators

Science.gov (United States)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2018-05-01

Spin transfer torque nano-oscillators (STNOs) based on magnetoresistance and spin transfer torque effects find potential applications in miniaturized wireless communication devices. Using the non-coherent non-equilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation, we elucidate the role of elastic phase breaking on the proposed STNO design featuring double barrier resonant tunneling. Demonstrating the immunity of our proposed design, we predict that despite the presence of elastic dephasing, the resonant tunneling magnetic tunnel junction structures facilitate oscillator designs featuring a large enhancement in microwave power up to 8μW delivered to a 50Ω load.

Modulation of spin-orbit torque efficiency by thickness control of heavy metal layers in Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Sethi, P.; Krishnia, S.; Li, S.H.; Lew, W.S., E-mail: wensiang@ntu.edu.sg

2017-03-15

We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.

Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

International Nuclear Information System (INIS)

Daqiq, Reza; Ghobadi, Nader

2016-01-01

We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

Energy Technology Data Exchange (ETDEWEB)

Daqiq, Reza; Ghobadi, Nader

2016-07-15

We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

Spin-wave interference patterns created by spin-torque nano-oscillators for memory and computation

International Nuclear Information System (INIS)

Macia, Ferran; Kent, Andrew D; Hoppensteadt, Frank C

2011-01-01

Magnetization dynamics in nanomagnets has attracted broad interest since it was predicted that a dc current flowing through a thin magnetic layer can create spin-wave excitations. These excitations are due to spin momentum transfer, a transfer of spin angular momentum between conduction electrons and the background magnetization, that enables new types of information processing. Here we show how arrays of spin-torque nano-oscillators can create propagating spin-wave interference patterns of use for memory and computation. Memristic transponders distributed on the thin film respond to threshold tunnel magnetoresistance values, thereby allowing spin-wave detection and creating new excitation patterns. We show how groups of transponders create resonant (reverberating) spin-wave interference patterns that may be used for polychronous wave computation and information storage.

Spin-transfer torque induced dynamics of magnetic vortices in nanopillars

International Nuclear Information System (INIS)

Sluka, Volker

2011-01-01

The subject of this work are lithographically defined cylindrical nanopillars containing a stack of two Iron disks separated by a nonmagnetic spacer. The dimensions of the ferromagnetic disks are chosen such that at low magnetic fields, the so-called magnetic vortex is stabilized. In zero field, the magnetization of these objects is basically parallel to the disk plane and circulates the disk center. In doing so, the build-up of large in-plane stray fields is avoided. At the center of this distribution however, exchange forces turn the magnetization out of the disk plane, resulting in the formation of what is referred to as the vortex core. Magnetic vortices have attracted much attention in recent years. This interest is in large parts due to the highly interesting dynamic properties of these structures. In this work the static and dynamic properties of magnetic vortices and their behavior under the influence of spin-transfer torque are investigated. This is achieved by measuring the static and time dependent magnetoresistance under the influence of external magnetic fields. The samples allow the formation of a large variety of states. First, the focus is set on configurations, where one disk is in a vortex state while the other one is homogeneously magnetized. It is shown that spin-transfer torque excites the vortex gyrotropic mode in this configuration. The dependence of the mode frequency on the magnetic field is analyzed. The measurements show that as the vortex center of gyration shifts through the disk under the action of the magnetic field, the effective potential in which it is moving undergoes a change in shape. This shape change is reflected in a V-shaped field dependence of the gyration frequency. Analytical calculations are performed to investigate the effect of the asymmetry of the spin-transfer torque efficiency function on the vortex dynamics. It is shown that by means of asymmetry, spin-transfer torque can transfer energy to a gyrating vortex even

Analytical Prediction of the Spin Stabilized Satellite's Attitude Using The Solar Radiation Torque

International Nuclear Information System (INIS)

Motta, G B; Carvalho, M V; Zanardi, M C

2013-01-01

The aim of this paper is to present an analytical solution for the spin motion equations of spin-stabilized satellite considering only the influence of solar radiation torque. The theory uses a cylindrical satellite on a circular orbit and considers that the satellite is always illuminated. The average components of this torque were determined over an orbital period. These components are substituted in the spin motion equations in order to get an analytical solution for the right ascension and declination of the satellite spin axis. The time evolution for the pointing deviation of the spin axis was also analyzed. These solutions were numerically implemented and compared with real data of the Brazilian Satellite of Data Collection – SCD1 an SCD2. The results show that the theory has consistency and can be applied to predict the spin motion of spin-stabilized artificial satellites

Efficient charge-spin conversion and magnetization switching through the Rashba effect at topological-insulator/Ag interfaces

Science.gov (United States)

Shi, Shuyuan; Wang, Aizhu; Wang, Yi; Ramaswamy, Rajagopalan; Shen, Lei; Moon, Jisoo; Zhu, Dapeng; Yu, Jiawei; Oh, Seongshik; Feng, Yuanping; Yang, Hyunsoo

2018-01-01

We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) B i2S e3 and Ag bilayer by the spin-torque ferromagnetic resonance technique. The spin-orbit-torque ratio in the B i2S e3/Ag /CoFeB heterostructure shows a significant enhancement as the Ag thickness increases to ˜2 nm and reaches a value of 0.5 for 5 nm Ag, which is ˜3 times higher than that of B i2S e3/CoFeB at room temperature. The observation reveals the interfacial effect of B i2S e3/Ag exceeds that of the topological surface states (TSSs) in the B i2S e3 layer and plays a dominant role in the charge-to-spin conversion in the B i2S e3/Ag /CoFeB system. Based on first-principles calculations, we attribute our observation to the large Rashba splitting bands which wrap the TSS band and have the same net spin polarization direction as the TSS of B i2S e3 . Subsequently, we demonstrate Rashba-induced magnetization switching in B i2S e3/Ag /Py with a low current density of 5.8 ×105A /c m2 .

Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

Science.gov (United States)

Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

Spin-orbit-coupling induced torque in ballistic domain walls: Equivalence of charge-pumping and nonequilibrium magnetization formalisms

NARCIS (Netherlands)

Yuan, Z.; Kelly, Paul J.

2016-01-01

To study the effect of spin-orbit coupling (SOC) on spin-transfer torque in magnetic materials, we have implemented two theoretical formalisms that can accommodate SOC. Using the “charge-pumping” formalism, we find two contributions to the out-of-plane spin-transfer torque parameter β in ballistic

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2018-01-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit

2018-04-02

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Spin dynamics under local gauge fields in chiral spin-orbit coupling systems

International Nuclear Information System (INIS)

Tan, S.G.; Jalil, M.B.A.; Fujita, T.; Liu, X.J.

2011-01-01

Research highlights: → We derive a modified LLG equation in magnetic systems with spin-orbit coupling (SOC). → Our results are applied to magnetic multilayers, and DMS and magnetic Rashba systems. → SOC mediated magnetization switching is predicted in rare earth metals (large SOC). → The magnetization trajectory and frequency can be modulated by applied voltage. → This facilitates potential application as tunable microwave oscillators. - Abstract: We present a theoretical description of local spin dynamics in magnetic systems with a chiral spin texture and finite spin-orbit coupling (SOC). Spin precession about the relativistic effective magnetic field in a SOC system gives rise to a non-Abelian SU(2) gauge field reminiscent of the Yang-Mills field. In addition, the adiabatic relaxation of electron spin along the local spin yields an U(1) x U(1) topological gauge (Berry) field. We derive the corresponding equation of motion i.e. modified Landau-Lifshitz-Gilbert (LLG) equation, for the local spin under the influence of these effects. Focusing on the SU(2) gauge, we obtain the spin torque magnitude, and the amplitude and frequency of spin oscillations in this system. Our theoretical estimates indicate significant spin torque and oscillations in systems with large spin-orbit coupling, which may be utilized in technological applications such as current-induced magnetization-switching and tunable microwave oscillators.

Mutual phase-locking of several spin-torque nano-oscillators

International Nuclear Information System (INIS)

Prokopenko, O.V.; Sulimenko, O.R.

2011-01-01

Criterions for evaluating the effectiveness of mutual phase-locking of several spin-torque nano-oscillators (STNO) are proposed. An application of one of the criterions to describe the process of mutual phase-locking of the three almost identical STNO's is considered

Magnetization rotation or generation of incoherent spin waves? Suggestions for a spin-transfer effect experiment

International Nuclear Information System (INIS)

Bazaliy, Y. B.; Jones, B. A.

2002-01-01

''Spin-transfer'' torque is created when electric current is passed through metallic ferromagnets and may have interesting applications in spintronics. So far it was experimentally studied in ''collinear'' geometries, where it is difficult to predict whether magnetization will coherently rotate or spin-waves will be generated. Here we propose an easy modification of existing experiment in which the spin-polarization of incoming current will no longer be collinear with magnetization and recalculate the switching behavior of the device. We expect that a better agreement with the magnetization rotation theory will be achieved. That can be an important step in reconciling alternative points of view on the effect of spin-transfer torque

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

KAUST Repository

Oh, Se Chung

2009-10-25

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

KAUST Repository

Oh, Se Chung; Park, Seung Young; Manchon, Aurelien; Chshiev, Mairbek; Han, Jae Ho; Lee, Hyun Woo; Lee, Jang Eun; Nam, Kyung Tae; Jo, Younghun; Kong, Yo Chan; Dieny, Bernard; Lee, Kyung Jin

2009-01-01

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

Selective control of vortex polarities by microwave field in two robustly synchronized spin-torque nano-oscillators

Science.gov (United States)

Li, Yi; de Milly, Xavier; Klein, Olivier; Cros, Vincent; Grollier, Julie; de Loubens, Grégoire

2018-01-01

Manipulating operation states of coupled spin-torque nano-oscillators (STNOs), including their synchronization, is essential for applications such as complex oscillator networks. In this work, we experimentally demonstrate selective control of two coupled vortex STNOs through microwave-assisted switching of their vortex core polarities. First, the two oscillators are shown to synchronize due to the dipolar interaction in a broad frequency range tuned by an external biasing field. Coherent output is demonstrated along with strong linewidth reduction. Then, we show individual vortex polarity control of each oscillator, which leads to synchronization/desynchronization due to accompanied frequency shift. Our methods can be easily extended to multiple-element coupled oscillator networks.

Intrinsic and extrinsic spin-orbit torques from first principles

International Nuclear Information System (INIS)

Geranton, Guillaume

2017-01-01

This thesis attempts to shed light on the microscopic mechanisms underlying the current-induced magnetic torques in ferromagnetic heterostructures. We have developed first principles methods aiming at the accurate and effcient calculation of the so-called spin-orbit torques (SOTs) in magnetic thin films. The emphasis of this work is on the impurity-driven extrinsic SOTs. The main part of this thesis is dedicated to the development of a formalism for the calculation of the SOTs within the Korringa-Kohn-Rostoker (KKR) method. The impurity-induced transitions rates are obtained from first principles and their effect on transport properties is treated within the Boltzmann formalism. The developed formalism provides a mean to compute the SOTs beyond the conventional constant relaxation time approximation. We first apply our formalism to the investigation of FePt/Pt and Co/Cu bilayers in the presence of defects and impurities. Our results hint at a crucial dependence of the torque on the type of disorder present in the films, which we explain by a complex interplay of several competing Fermi surface contributions to the SOT. Astonishingly, specific defect distributions or doping elements lead respectively to an increase or a sign change of the torque, which can not be explained on the basis of simple models. We also compute the intrinsic SOT induced by electrical and thermal currents within the full potential linearized augmented plane-wave method. Motivated by recent experimental works, we then investigate the microscopic origin of the SOT in a Ag_2Bi-terminated Ag film grown on ferromagnetic Fe(110). We find that the torque in that system can not be explained solely by the spin-orbit coupling in the Ag_2Bi alloy, and instead results from the spin-orbit coupling in all regions of the film.Finally, we predict a large SOT in Fe/Ge bilayers and suggest that semiconductor substrates might be a promising alternative to heavy metals for the development of SOT-based magnetic

Intrinsic and extrinsic spin-orbit torques from first principles

Energy Technology Data Exchange (ETDEWEB)

Geranton, Guillaume

2017-09-01

This thesis attempts to shed light on the microscopic mechanisms underlying the current-induced magnetic torques in ferromagnetic heterostructures. We have developed first principles methods aiming at the accurate and effcient calculation of the so-called spin-orbit torques (SOTs) in magnetic thin films. The emphasis of this work is on the impurity-driven extrinsic SOTs. The main part of this thesis is dedicated to the development of a formalism for the calculation of the SOTs within the Korringa-Kohn-Rostoker (KKR) method. The impurity-induced transitions rates are obtained from first principles and their effect on transport properties is treated within the Boltzmann formalism. The developed formalism provides a mean to compute the SOTs beyond the conventional constant relaxation time approximation. We first apply our formalism to the investigation of FePt/Pt and Co/Cu bilayers in the presence of defects and impurities. Our results hint at a crucial dependence of the torque on the type of disorder present in the films, which we explain by a complex interplay of several competing Fermi surface contributions to the SOT. Astonishingly, specific defect distributions or doping elements lead respectively to an increase or a sign change of the torque, which can not be explained on the basis of simple models. We also compute the intrinsic SOT induced by electrical and thermal currents within the full potential linearized augmented plane-wave method. Motivated by recent experimental works, we then investigate the microscopic origin of the SOT in a Ag{sub 2}Bi-terminated Ag film grown on ferromagnetic Fe(110). We find that the torque in that system can not be explained solely by the spin-orbit coupling in the Ag{sub 2}Bi alloy, and instead results from the spin-orbit coupling in all regions of the film.Finally, we predict a large SOT in Fe/Ge bilayers and suggest that semiconductor substrates might be a promising alternative to heavy metals for the development of SOT

Multi-Valued Spin Switch in a Semiconductor Microcavity

Science.gov (United States)

Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

2011-12-01

In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

Fast torque estimation of in-wheel parallel flux switching machines

NARCIS (Netherlands)

Ilhan, E.; Paulides, J.J.H.; Lomonova, E.

2010-01-01

Parallel ux switching machines (PFSM) come forward in automotive industry as a promising candidate for hybrid truck applications due to their high power density. Torque calculations, i.e cogging and electromagnetic, are important features of these machines, which require a ??nite element model (FEM)

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Steady motion of skyrmions and domains walls under diffusive spin torques

KAUST Repository

Elías, Ricardo Gabriel

2017-03-09

We explore the role of the spin diffusion of conducting electrons in two-dimensional magnetic textures (domain walls and skyrmions) with spatial variation of the order of the spin precession length λex. The effect of diffusion reflects in four additional torques that are third order in spatial derivatives of magnetization and bilinear in λex and in the nonadiabatic parameter β′. In order to study the dynamics of the solitons when these diffusive torques are present, we derive the Thiele equation in the limit of steady motion and we compare the results with the nondiffusive limit. When considering a homogenous current these torques increase the longitudinal velocity of transverse domain walls of width Δ by a factor (λex/Δ)2(α/3), α being the magnetic damping constant. In the case of single skyrmions with core radius r0 these new contributions tend to increase the Magnus effect in an amount proportional to (λex/r0)2(1+2αβ′).

Steady motion of skyrmions and domains walls under diffusive spin torques

KAUST Repository

Elí as, Ricardo Gabriel; Vidal-Silva, Nicolas; Manchon, Aurelien

2017-01-01

We explore the role of the spin diffusion of conducting electrons in two-dimensional magnetic textures (domain walls and skyrmions) with spatial variation of the order of the spin precession length λex. The effect of diffusion reflects in four additional torques that are third order in spatial derivatives of magnetization and bilinear in λex and in the nonadiabatic parameter β′. In order to study the dynamics of the solitons when these diffusive torques are present, we derive the Thiele equation in the limit of steady motion and we compare the results with the nondiffusive limit. When considering a homogenous current these torques increase the longitudinal velocity of transverse domain walls of width Δ by a factor (λex/Δ)2(α/3), α being the magnetic damping constant. In the case of single skyrmions with core radius r0 these new contributions tend to increase the Magnus effect in an amount proportional to (λex/r0)2(1+2αβ′).

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

Science.gov (United States)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-01-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

Ferromagnetic resonance study of the half-Heusler alloy NiMnSb. The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators

Energy Technology Data Exchange (ETDEWEB)

Riegler, Andreas

2011-11-25

Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO)), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10{sup -3} range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron

Spin-orbit torque induced magnetic vortex polarity reversal utilizing spin-Hall effect

Science.gov (United States)

Li, Cheng; Cai, Li; Liu, Baojun; Yang, Xiaokuo; Cui, Huanqing; Wang, Sen; Wei, Bo

2018-05-01

We propose an effective magnetic vortex polarity reversal scheme that makes use of spin-orbit torque introduced by spin-Hall effect in heavy-metal/ferromagnet multilayers structure, which can result in subnanosecond polarity reversal without endangering the structural stability. Micromagnetic simulations are performed to investigate the spin-Hall effect driven dynamics evolution of magnetic vortex. The mechanism of magnetic vortex polarity reversal is uncovered by a quantitative analysis of exchange energy density, magnetostatic energy density, and their total energy density. The simulation results indicate that the magnetic vortex polarity is reversed through the nucleation-annihilation process of topological vortex-antivortex pair. This scheme is an attractive option for ultra-fast magnetic vortex polarity reversal, which can be used as the guidelines for the choice of polarity reversal scheme in vortex-based random access memory.

Spin-neurons: A possible path to energy-efficient neuromorphic computers

Energy Technology Data Exchange (ETDEWEB)

Sharad, Mrigank; Fan, Deliang; Roy, Kaushik [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2013-12-21

Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing hardware, computing-devices beyond CMOS may need to be explored. The suitability of such devices to this field of computing would strongly depend upon how closely their physical characteristics match with the essential computing primitives employed in such models. In this work, we discuss the rationale of applying emerging spin-torque devices for bio-inspired computing. Recent spin-torque experiments have shown the path to low-current, low-voltage, and high-speed magnetization switching in nano-scale magnetic devices. Such magneto-metallic, current-mode spin-torque switches can mimic the analog summing and “thresholding” operation of an artificial neuron with high energy-efficiency. Comparison with CMOS-based analog circuit-model of a neuron shows that “spin-neurons” (spin based circuit model of neurons) can achieve more than two orders of magnitude lower energy and beyond three orders of magnitude reduction in energy-delay product. The application of spin-neurons can therefore be an attractive option for neuromorphic computers of future.

SIMULTANEOUS SPACE VECTOR MODULATION DIRECT TORQUE CONTROL OF TWO INDUCTION MOTORS USED IN ELECTRIC VEHICLES BY A NINE-SWITCH INVERTER

Directory of Open Access Journals (Sweden)

A. R. SHAMLOU

2017-12-01

Full Text Available In this paper, a novel two output nine switch-inverter is proposed in order to increase the synchronization speed of induction motors used in electric vehicles (EVs while improving the efficiency and controllability of the system. The number of switches in the proposed inverter is reduced by 25% compared to double six-switch inverters which conventionally used in EVs. The main characteristics of the considered inverter can be noted as follows: sinusoidal input and outputs, unity output power factor, and specifically, low construction cost due to active switch number reduction. The classical direct torque control method causes torque ripple and speed fluctuations. Therefore, in order to increase accuracy and dynamics of drive system, the SVM-DTC method is proposed, leading to less torque ripple and constant switching frequency. The obtained torque ripple is 2% which is less than the existing structures In order to illustrate advantages of the proposed approach, performance of the EVs in the standard cycles is evaluated.

The magnetization dynamics of nano-contact spin-torque vortex oscillators

Science.gov (United States)

Keatley, Paul

The operation of nano-contact (NC) spin-torque vortex oscillators (STVOs) is underpinned by vortex gyration in response to spin-torque delivered by high density current passing through the magnetic layers of a spin valve. Gyration directly beneath the NC yields radio frequency (RF) emission through the giant magnetoresistance (GMR) effect, which can be readily detected electronically. The magnetization dynamics that extend beyond the NC perimeter contribute little to the GMR signal, but are crucial for synchronization of multiple NC-STVOs that share the same spin valve film. In this work time-resolved scanning Kerr microscopy (TRSKM) was used to directly image the extended dynamics of STVOs phase-locked to an injected RF current. In this talk the dynamics of single 250-nm diameter NCs, and a pair of 100-nm diameter NCs, will be presented. In general the Kerr images reveal well-defined localized and far-field dynamics, driven by spin-torque and RF current Oersted fields respectively. The RF frequency, RF Oersted field, direction of an in-plane magnetic field, and equilibrium magnetic state, all influenced the spatial character of the dynamics observed in single NCs. In the pair of NCs, two modes were observed in the RF emission. Kerr images revealed that a vortex was formed beneath each NC and that the mode with enhanced spectral amplitude and line quality appeared to be correlated with two localized regions oscillating with similar amplitude and phase, while a second weaker mode exhibited amplitude and phase differences. This suggests that the RF emission was generated by collective modes of vortex gyration dynamically coupled via magnetization dynamics and dipolar interactions of the shared magnetic layers. Within the constraints of injection locking, this work demonstrates that TRSKM can provide valuable insight into the spatial character and time-evolution of magnetization dynamics generated by NC-STVOs and the conditions that may favor their synchronization

Possible charge analogues of spin transfer torques in bulk superconductors

Science.gov (United States)

Garate, Ion

2014-03-01

Spin transfer torques (STT) occur when electric currents travel through inhomogeneously magnetized systems and are important for the motion of magnetic textures such as domain walls. Since superconductors are easy-plane ferromagnets in particle-hole (charge) space, it is natural to ask whether any charge duals of STT phenomena exist therein. We find that the superconducting analogue of the adiabatic STT vanishes in a bulk superconductor with a momentum-independent order parameter, while the superconducting counterpart of the nonadiabatic STT does not vanish. This nonvanishing superconducting torque is induced by heat (rather than charge) currents and acts on the charge (rather than spin) degree of freedom. It can become significant in the vicinity of the superconducting transition temperature, where it generates a net quasiparticle charge and alters the dispersion and linewidth of low-frequency collective modes. This work has been financially supported by Canada's NSERC.

Spin-Orbit Torque and Spin Pumping in YIG/Pt with Interfacial Insertion Layers (Postprint)

Science.gov (United States)

2018-05-03

modified by spin-orbit torque6,7 in thin- film YIG due to absorption of pure spin current,8–12 which is gen- erated from an electric current in the adjacent... films were grown on Gd3Ga5O12(111) substrates by pulsed laser deposition as reported in Ref. 3. The YIG films were transferred through an ambient... introduction into the deposition chamber, maintained at 250 C at 50 mTorr O2 for 30 min to remove water and organics on the surface. The metal overlayers

Spin orbit torques and Dzyaloshinskii-Moriya interaction in dual-interfaced Co-Ni multilayers

KAUST Repository

Yu, Jiawei

2016-09-07

We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy metal (HM), while DMI is more of interfacial origin. In addition, we find that the direction of the domain wall (DW) motion can be either along or against the electron flow depending on the DW tilting angle when there is a large DMI. Such an abnormal DW motion induces a large assist field required for hysteretic magnetization reversal. Our results provide insight into the role of DMI in SOT driven magnetization switching, and demonstrate the feasibility of achieving desirable SOT and DMI for spintronic devices.

Spin orbit torques and Dzyaloshinskii-Moriya interaction in dual-interfaced Co-Ni multilayers

KAUST Repository

Yu, Jiawei; Qiu, Xuepeng; Wu, Yang; Yoon, Jungbum; Deorani, Praveen; Besbas, Jean Mourad; Manchon, Aurelien; Yang, Hyunsoo

2016-01-01

We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy metal (HM), while DMI is more of interfacial origin. In addition, we find that the direction of the domain wall (DW) motion can be either along or against the electron flow depending on the DW tilting angle when there is a large DMI. Such an abnormal DW motion induces a large assist field required for hysteretic magnetization reversal. Our results provide insight into the role of DMI in SOT driven magnetization switching, and demonstrate the feasibility of achieving desirable SOT and DMI for spintronic devices.

Current-induced switching in a magnetic insulator

Science.gov (United States)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Spin-transfer torques in antiferromagnetic textures: efficiency and quantification method

Czech Academy of Sciences Publication Activity Database

Yamane, Y.; Ieda, J.; Sinova, Jairo

2016-01-01

Roč. 94, č. 5 (2016), 1-8, č. článku 054409. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : spin-transfer torques * antiferromagnets Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.836, year: 2016

Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance

NARCIS (Netherlands)

Vlietstra, N.; Shan, J.; Castel, V.; Ben Youssef, J.; Bauer, G. E. W.; van Wees, B. J.

2013-01-01

The effective field torque of an yttrium-iron-garnet (YIG) film on the spin accumulation in an attached platinum (Pt) film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental

Angular dependence of spin transfer torque on magnetic tunnel junctions with synthetic ferrimagnetic free layer

International Nuclear Information System (INIS)

Ichimura, M; Hamada, T; Imamura, H; Takahashi, S; Maekawa, S

2010-01-01

Based on a spin-polarized free-electron model, spin and charge transports are analyzed in magnetic tunnel junctions with synthetic ferrimagnetic layers in the ballistic regime, and the spin transfer torque is derived. We characterize the synthetic ferrimagnetic free layer by extending an arbitrary direction of magnetizations of the two free layers forming the synthetic ferrimagnetic free layer. The synthetic ferrimagnetic configuration exerts the approximately optimum torque for small magnetization angle of the first layer relative to that of the pinned layer. For approximately anti-parallel magnetization of the first layer to that of the pinned layer, the parallel magnetization of two magnetic layers is favorable for magnetization reversal rather than the synthetic ferrimagnetic configuration.

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Science.gov (United States)

Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

2011-04-01

A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

Torque Coordination Control during Braking Mode Switch for a Plug-in Hybrid Electric Vehicle

OpenAIRE

Yang Yang; Chao Wang; Quanrang Zhang; Xiaolong He

2017-01-01

Hybrid vehicles usually have several braking systems, and braking mode switches are significant events during braking. It is difficult to coordinate torque fluctuations caused by mode switches because the dynamic characteristics of braking systems are different. In this study, a new type of plug-in hybrid vehicle is taken as the research object, and braking mode switches are divided into two types. The control strategy of type one is achieved by controlling the change rates of clutch hold-dow...

Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect

Energy Technology Data Exchange (ETDEWEB)

Tomasello, R., E-mail: tomasello@deis.unical.it [Department of Computer Science, Modelling, Electronics, and System Science, University of Calabria, Rende, CS (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy)

2014-05-07

This paper predicts the effect of the Dzyaloshinskii-Moriya interaction (DMI) and spin Hall effect in the spin-torque diode response of a Magnetic Tunnel Junction built over a Tantalum strip. Our results indicate that, for a microwave current large enough, the DMI can change qualitatively the resonant response by splitting the ferromagnetic resonance peak. We also find out that the two modes have a non-uniform spatial distribution.

Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect

International Nuclear Information System (INIS)

Tomasello, R.; Carpentieri, M.; Finocchio, G.

2014-01-01

This paper predicts the effect of the Dzyaloshinskii-Moriya interaction (DMI) and spin Hall effect in the spin-torque diode response of a Magnetic Tunnel Junction built over a Tantalum strip. Our results indicate that, for a microwave current large enough, the DMI can change qualitatively the resonant response by splitting the ferromagnetic resonance peak. We also find out that the two modes have a non-uniform spatial distribution

Efficiency improvement and torque ripple minimization of Switched Reluctance Motor using FEM and Seeker Optimization Algorithm

International Nuclear Information System (INIS)

Navardi, Mohammad Javad; Babaghorbani, Behnaz; Ketabi, Abbas

2014-01-01

Highlights: • This paper proposes a new method to optimize a Switched Reluctance Motor (SRM). • A combination of SOA and GA with Finite Element Method (FEM) analysis is employed to solve the SRM design optimization. • The results show that optimized SRM obtains higher average torque and higher efficiency. - Abstract: In this paper, performance optimization of Switched Reluctance Motor (SRM) was determined using Seeker Optimization Algorithm (SOA). The most efficient aim of the algorithm was found for maximum torque value at a minimum mass of the entire construction, following changing the geometric parameters. The optimization process was carried out using a combination of Seeker Optimization Algorithm and Finite Element Method (FEM). Fitness value was calculated by FEM analysis using COMSOL3.4, and the SOA was realized by MATLAB. The proposed method has been applied for a case study and it has been also compared with Genetic Algorithm (GA). The results show that the optimized motor using SOA had higher torque value and efficiency with lower mass and torque ripple, exhibiting the validity of this methodology for SRM design

Torque Ripple Reduction of a Novel Modular Arc-Linear Flux-Switching Permanent-Magnet Motor with Rotor Step Skewing

Directory of Open Access Journals (Sweden)

Xiangdong Liu

2016-05-01

Full Text Available A novel modular arc-linear flux-switching permanent-magnet motor (MAL-FSPM used for scanning system instead of reduction gearboxes and kinematic mechanisms is proposed and researched in this paper by the finite element method (FEM. The MAL-FSPM combines characteristics of flux-switching permanent-magnet motor and linear motor and can realize the direct driving and limited angular movement. Structure and operation principle of the MAL-FSPM are analyzed. Cogging torque model of the MAL-FSPM is established. The characteristics of cogging torque and torque ripple are investigated for: (1 distance (dend between left end of rotor and left end of stator is more than two rotor tooth pitch (τp; and (2 dend is less than two rotor tooth pitch. Cogging torque is an important component of torque ripple and the period ratio of the cogging torque to the back electromotive force (EMF equals one for the MAL-FSPM before optimization. In order to reduce the torque ripple as much as possible and affect the back EMF as little as possible, influence of period ratio of cogging torque to back EMF on rotor step skewing is investigated. Rotor tooth width and stator slot open width are optimized to increase the period ratio of cogging torque to back EMF. After the optimization, torque ripple is decreased by 79.8% for dend > τp and torque ripple is decreased by 49.7% for dend < τp. Finally, 3D FEM model is established to verify the 2D results.

Wide operating window spin-torque majority gate towards large-scale integration of logic circuits

Science.gov (United States)

Vaysset, Adrien; Zografos, Odysseas; Manfrini, Mauricio; Mocuta, Dan; Radu, Iuliana P.

2018-05-01

Spin Torque Majority Gate (STMG) is a logic concept that inherits the non-volatility and the compact size of MRAM devices. In the original STMG design, the operating range was restricted to very small size and anisotropy, due to the exchange-driven character of domain expansion. Here, we propose an improved STMG concept where the domain wall is driven with current. Thus, input switching and domain wall propagation are decoupled, leading to higher energy efficiency and allowing greater technological optimization. To ensure majority operation, pinning sites are introduced. We observe through micromagnetic simulations that the new structure works for all input combinations, regardless of the initial state. Contrary to the original concept, the working condition is only given by threshold and depinning currents. Moreover, cascading is now possible over long distances and fan-out is demonstrated. Therefore, this improved STMG concept is ready to build complete Boolean circuits in absence of external magnetic fields.

High efficiency of the spin-orbit torques induced domain wall motion in asymmetric interfacial multilayered Tb/Co wires

International Nuclear Information System (INIS)

Bang, Do; Awano, Hiroyuki

2015-01-01

We investigated current-induced DW motion in asymmetric interfacial multilayered Tb/Co wires for various thicknesses of magnetic and Pt-capping layers. It is found that the driving mechanism for the DW motion changes from interfacial to bulk effects at much thick magnetic layer (up to 19.8 nm). In thin wires, linearly depinning field dependence of critical current density and in-plane field dependence of DW velocity suggest that the extrinsic pinning governs field-induced DW motion and injecting current can be regarded as an effective field. It is expected that the high efficiency of spin-orbit torques in thick magnetic multilayers would have important implication for future spintronic devices based on in-plane current induced-DW motion or switching

High efficiency of the spin-orbit torques induced domain wall motion in asymmetric interfacial multilayered Tb/Co wires

Energy Technology Data Exchange (ETDEWEB)

Bang, Do, E-mail: bang@spin.mp.es.osaka-u.ac.jp [Toyota Technological Institute, Tempaku, Nagoya 468-8511 (Japan); Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Hanoi (Viet Nam); Awano, Hiroyuki [Toyota Technological Institute, Tempaku, Nagoya 468-8511 (Japan)

2015-05-07

We investigated current-induced DW motion in asymmetric interfacial multilayered Tb/Co wires for various thicknesses of magnetic and Pt-capping layers. It is found that the driving mechanism for the DW motion changes from interfacial to bulk effects at much thick magnetic layer (up to 19.8 nm). In thin wires, linearly depinning field dependence of critical current density and in-plane field dependence of DW velocity suggest that the extrinsic pinning governs field-induced DW motion and injecting current can be regarded as an effective field. It is expected that the high efficiency of spin-orbit torques in thick magnetic multilayers would have important implication for future spintronic devices based on in-plane current induced-DW motion or switching.

A New Switched Reluctance Motor Design to Reduce Torque Ripple using Finite Element Fuzzy Optimization

Directory of Open Access Journals (Sweden)

S. R. Mousavi-Aghdam

2012-03-01

Full Text Available This paper presents a new design to reduce torque ripple in Switched Reluctance Motors (SRM. Although SRM possesses many advantages in terms of motor structure, it suffers from large torque ripple that causes problems such as vibration and acoustic noise. The paper describes new rotor and stator pole shapes with a non-uniform air gap profile to reduce torque ripple while retaining its average value. An optimization using fuzzy strategy is successfully performed after sensitivity analysis. The two dimensional (2-D finite element method (FEM results, have demonstrated validity of the proposed new design.

Giant spin torque in hybrids with anisotropic p-d exchange interaction

Science.gov (United States)

Korenev, V. L.

2014-03-01

Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 104 A/cm2 in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics.

Giant spin torque in hybrids with anisotropic p-d exchange interaction

International Nuclear Information System (INIS)

Korenev, V. L.

2014-01-01

Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 10 4  A/cm 2 in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics

Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction

KAUST Repository

Wang, Xuhui

2012-03-13

In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.

Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction

KAUST Repository

Wang, Xuhui; Manchon, Aurelien

2012-01-01

In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.

Giant spin torque in systems with anisotropic exchange interaction

OpenAIRE

Korenev, Vladimir L.

2012-01-01

Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the d...

NRC Information No. 89-43: Permanent deformation of torque switch helical springs in Limitorque SMA-type motor operators

International Nuclear Information System (INIS)

Rossi, C.E.

1992-01-01

Problems with the helical springs were discovered during a series of dynamic tests that were conducted with a motor-operated wedge-gate valve from the decommissioned Shippingport Atomic Power Station (Shippingport). The valve was installed in a portion of the piping system that had been modified to simulate the stiffness of a typical US piping system. The valve was 30 years old and had its original Limitorque SMA-type motor operator. One of the main objectives of these tests was to determine the operating capability of the valve when subjected to simultaneous internal hydraulic and seismic loadings. This was typically accomplished by operating the valve to achieve maximum hydraulic loading during maximum seismic loading. During testing, an operability problem with the valve motor operator occurred. The design of the SMA-type motor operator is such that the torque switch helical spring is in its most compressed condition when the valve is closed. Thus, a normally closed valve is more likely to experience permanent deformation of the helical torque spring. A review of the Shippingport records indicated that both of these valves had been used as normally closed valves at Shippingport. Thus, normally closed, safety-related valves with Limitorque SMA-type motor operators may not accomplish their intended safety-related function because the original torque switch setting may result in lower output torque caused by the permanent deformation of their torque switch helical springs

Motion of the hot spot and spin torque in accreting millisecond pulsars

NARCIS (Netherlands)

Patruno, A.

2008-01-01

The primary concern of this contribution is that accreting millisecond pulsars (AMXPs) show a much larger amount of information than is commonly believed. The three questions to be addressed are: 1. Is the apparent spin torque observed in AMXPs real ? 2. Why do we see correlations and

Fast and efficient STT switching in MTJ using additional transient pulse current

Science.gov (United States)

Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

2017-06-01

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Magnetic vortex excitation as spin torque oscillator and its unusual trajectories

Science.gov (United States)

Natarajan, Kanimozhi; Muthuraj, Ponsudana; Rajamani, Amuda; Arumugam, Brinda

2018-05-01

We report an interesting observation of unusual trajectories of vortex core oscillations in a spin valve pillar. Micromagnetic simulation in the composite free layer spin valve nano-pillar shows magnetic vortex excitation under critical current density. When current density is slightly increased and wave vector is properly tuned, for the first time we observe a star like and square gyration. Surprisingly this star like and square gyration also leads to steady, coherent and sustained oscillations. Moreover, the frequency of gyration is also very high for this unusual trajectories. The power spectral analysis reveals that there is a marked increase in output power and frequency with less distortions. Our investigation explores the possibility of these unusual trajectories to exhibit spin torque oscillations.

Thermomagnetic torque in hydrogen isotopes

International Nuclear Information System (INIS)

Cramer, J.A.

1975-01-01

The thermomagnetic torque has been measured in parahydrogen and ortho and normal deuterium for pressures from 0.10 to 2.0 torr and temperatures from 100 to 370 K. Since the torque depends on the precession of the molecular rotational magnetic moment around the field direction, coupling of the molecular nuclear spin to the rotational moment can affect the torque. Evidence of spin coupling effects is found for the torque in both deuterium modifications. In para hydrogen the torque at all temperatures and pressures exhibits behavior expected of a gas of zero nuclear spin molecules. Additionally, earlier data for hydrogen deuteride and for normal hydrogen from 105 to 374 K are evaluated and discussed. The high pressure limiting values of torque peak heights and positions for all these gases are compared with theory

Giant spin torque in hybrids with anisotropic p-d exchange interaction

Energy Technology Data Exchange (ETDEWEB)

Korenev, V. L., E-mail: korenev@orient.ioffe.ru [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universitat Dortmund, D-44227 Dortmund (Germany)

2014-03-03

Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 10{sup 4} A/cm{sup 2} in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics.

Superconducting spin switch based on superconductor-ferromagnet nanostructures for spintronics

International Nuclear Information System (INIS)

Kehrle, Jan; Mueller, Claus; Obermeier, Guenter; Schreck, Matthias; Gsell, Stefan; Horn, Siegfried; Tidecks, Reinhard; Zdravkov, Vladimir; Morari, Roman; Sidorencko, Anatoli; Prepelitsa, Andrei; Antropov, Evgenii; Socrovisciiuc, Alexei; Nold, Eberhard; Tagirov, Lenar

2011-01-01

Very rapid developing area, spintronics, needs new devices, based on new physical principles. One of such devices - a superconducting spin-switch, consists of ferromagnetic and superconducting layers, and is based on a new phenomenon - reentrant superconductivity. The tuning of the superconducting and ferromagnetic layers thickness is investigated to optimize superconducting spin-switch effect for Nb/Cu 41 Ni 59 based nanoscale layered systems.

Circuit Simulation of All-Spin Logic

KAUST Repository

Alawein, Meshal

2016-05-01

With the aggressive scaling of complementary metal-oxide semiconductor (CMOS) nearing an inevitable physical limit and its well-known power crisis, the quest for an alternative/augmenting technology that surpasses the current semiconductor electronics is needed for further technological progress. Spintronic devices emerge as prime candidates for Beyond CMOS era by utilizing the electron spin as an extra degree of freedom to decrease the power consumption and overcome the velocity limit connected with the charge. By using the nonvolatility nature of magnetization along with its direction to represent a bit of information and then manipulating it by spin-polarized currents, routes are opened for combined memory and logic. This would not have been possible without the recent discoveries in the physics of nanomagnetism such as spin-transfer torque (STT) whereby a spin-polarized current can excite magnetization dynamics through the transfer of spin angular momentum. STT have expanded the available means of switching the magnetization of magnetic layers beyond old classical techniques, promising to fulfill the need for a new generation of dense, fast, and nonvolatile logic and storage devices. All-spin logic (ASL) is among the most promising spintronic logic switches due to its low power consumption, logic-in-memory structure, and operation on pure spin currents. The device is based on a lateral nonlocal spin valve and STT switching. It utilizes two nanomagnets (whereby information is stored) that communicate with pure spin currents through a spin-coherent nonmagnetic channel. By using the well-known spin physics and the recently proposed four-component spin circuit formalism, ASL can be thoroughly studied and simulated. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall

Mutual synchronization of spin-torque oscillators consisting of perpendicularly magnetized free layers and in-plane magnetized pinned layers

Science.gov (United States)

Taniguchi, Tomohiro; Tsunegi, Sumito; Kubota, Hitoshi

2018-01-01

A mutual synchronization of spin-torque oscillators coupled through current injection is studied theoretically. Models of electrical coupling in parallel and series circuits are proposed. Solving the Landau-Lifshitz-Gilbert equation, excitation of in-phase or antiphase synchronization, depending on the ways the oscillators are connected, is found. It is also found from both analytical and numerical calculations that the current-frequency relations for both parallel and series circuits are the same as that for a single spin-torque oscillator.

Nonadiabatic Spin Torque Investigated Using Thermally Activated Magnetic Domain Wall Dynamics

DEFF Research Database (Denmark)

Eltschka, M.; Woetzel, Mathias; Rhensius, J.

2010-01-01

of the DW as a quasiparticle in a one-dimensional potential landscape. By injecting small currents, the potential is modified, allowing for the determination of the nonadiabatic spin torque: βt=0.010±0.004 for a transverse DW and βv=0.073±0.026 for a vortex DW. The larger value is attributed to the higher...

Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

Science.gov (United States)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-06-01

We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

DEFF Research Database (Denmark)

Javadi, Alisa; Ding, Dapeng; Appel, Martin Hayhurst

2018-01-01

Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates between photons [2,5] or to entangle remote spin states [6......-9]. Ultimately, a quantum network of entangled spins constitutes a new paradigm in quantum optics [1]. Towards this goal, an integrated spin-photon interface would be a major leap forward. Here we demonstrate an efficient and optically programmable interface between the spin of an electron in a quantum dot...... and photons in a nanophotonic waveguide. The spin can be deterministically prepared with a fidelity of 96\\%. Subsequently the system is used to implement a "single-spin photonic switch", where the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may...

Microwave frequency tuning in heterogeneous spin torque oscillator with perpendicular polarizer: A macrospin study

Science.gov (United States)

Bhoomeeswaran, H.; Vivek, T.; Sabareesan, P.

2018-04-01

In this article, we have theoretically devised a Spin Torque Nano Oscillator (STNO) with perpendicular polarizer using macro spin model. The devised spin valve structure is heterogeneous (i.e.) it is made of two different ferromagnetic materials [Co and its alloy CoFeB]. The dynamics of magnetization provoked by spin transfer torque is studied numerically by solving the famous Landau-Lifshitz-Gilbert-Slonczewski [LLGS] equation. The results are obtained for the perpendicular polarizer and for that particular out of plane orientation we vary the free layer angle from 10° to 90°. The obtained results are highly appealing, because frequency range is available in all the tilt angles of free layer and it is exceptionally tunable in all free layer tilt angles with zero applied field. Moreover, the utmost operating frequency of about 83.3 GHz and its corresponding power of 4.488 µW/mA2/GHz is acquired for the free layer tilt angle θ = 90° with the solid applied current density of 10 × 1010 A/m2. Also, our device emits high quality factor of about 396, which is remarkably desirable for making devices. These pioneering results provides a significant development for future spintronic based devices.

Current induced multi-mode propagating spin waves in a spin transfer torque nano-contact with strong perpendicular magnetic anisotropy

Science.gov (United States)

Mohseni, S. Morteza; Yazdi, H. F.; Hamdi, M.; Brächer, T.; Mohseni, S. Majid

2018-03-01

Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free layer, two propagating spin wave modes with different frequency and spatial distribution can be excited simultaneously. Our results indicate that in-plane magnetized spin transfer nano-contacts in PMA materials do not host a solitonic self-localized spin-wave bullet, which is different from previous studies for systems with in plane magnetic anisotropy. This feature renders them interesting for nano-scale magnonic waveguides and crystals since magnon transport can be configured by tuning the applied current.

Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

Energy Technology Data Exchange (ETDEWEB)

Siracusano, G., E-mail: giuliosiracusano@gmail.com; Puliafito, V.; Giordano, A.; Azzerboni, B.; Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy); Tomasello, R. [Department of Computer Science, Modelling, Electronics and System Science, University of Calabria, Via P. Bucci, I-87036 Rende (CS) (Italy); La Corte, A. [Department of Informatic Engineering and Telecommunications, University of Catania, Viale Andrea Doria 6, 95125 Catania (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy)

2015-05-07

This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.

Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

International Nuclear Information System (INIS)

Siracusano, G.; Puliafito, V.; Giordano, A.; Azzerboni, B.; Finocchio, G.; Tomasello, R.; La Corte, A.; Carpentieri, M.

2015-01-01

This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Science.gov (United States)

Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou

2017-07-01

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

Current-induced domain wall motion: Separating spin torque and Oersted-field effects in Co/Pt nanowires

Energy Technology Data Exchange (ETDEWEB)

Heinen, Jan; Boulle, Olivier; Rousseau, Kevin; Malinowski, Gregory; Klaeui, Mathias [Universitaet Konstanz, Fachbereich Physik, D-78457 Konstanz (Germany); Swagton, Henk J.; Koopmans, Bert [Eindhoven University of Technology, Department of Applied Physics, MB 5600 (Netherlands); Ulysse, Christian; Faini, Giancarlo [CNRS, Phynano team, Laboratoire de Photonique et de Nanostructures, 91460 Marcoussis (France)

2010-07-01

We report on magnetotransport studies on perpendicularly magnetized nanowires with narrow domain wall (DW) structures. Using Co/Pt multilayer nanowires, we have previously shown that Joule heating is concealing most of the current induced domain wall effects, but using a constant sample temperature a large non-adiabacity factor {beta} has been deduced. Here, we carry out experiments for both applied field directions and current polarities, starting from different DW configurations within a Hall cross. We clearly show, using the different symmetries of spin torque and Oersted-field, that the much debated Oersted-field does not contribute to the DW depinning significantly. This allows us to extract the spin torque contribution and the non-adiabacity factor {beta}, which turns out to be in line with previous measurements.

Current-induced magnetic switching of a single molecule magnet on a spin valve

International Nuclear Information System (INIS)

Zhang, Xiao; Wang, Zheng-Chuan; Zheng, Qing-Rong; Zhu, Zheng-Gang; Su, Gang

2015-01-01

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs

Current-induced magnetic switching of a single molecule magnet on a spin valve

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiao [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Zheng-Chuan, E-mail: wangzc@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zheng, Qing-Rong [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zhu, Zheng-Gang [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); School of Electronics, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China); Su, Gang, E-mail: gsu@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China)

2015-04-17

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs.

Voltage switching technique for detecting nuclear spin polarization in a quantum dot

International Nuclear Information System (INIS)

Takahashi, Ryo; Kono, Kimitoshi; Tarucha, Seigo; Ono, Keiji

2010-01-01

We have introduced a source-drain voltage switching technique for studying nuclear spins in a vertical double quantum dot. Switching the source-drain voltage between the spin-blockade state and the zero-bias Coulomb blockade state can tune the energy difference between the spin singlet and triplet, and effectively turn on/off the hyperfine interaction. Since the change in the nuclear spin state affects the source-drain current, nuclear spin properties can only be detected by transport measurement. Using this technique, we have succeeded in measuring the timescale of nuclear spin depolarization. Furthermore, combining this technique and an RF ac magnetic field, we successfully detected continuous-wave NMR signals of 75 As, 69 Ga, and 71 Ga, which are contained in a quantum dot. (author)

Magnetic moment of inertia within the torque-torque correlation model.

Science.gov (United States)

Thonig, Danny; Eriksson, Olle; Pereiro, Manuel

2017-04-19

An essential property of magnetic devices is the relaxation rate in magnetic switching which strongly depends on the energy dissipation. This is described by the Landau-Lifshitz-Gilbert equation and the well known damping parameter, which has been shown to be reproduced from quantum mechanical calculations. Recently the importance of inertia phenomena have been discussed for magnetisation dynamics. This magnetic counterpart to the well-known inertia of Newtonian mechanics, represents a research field that so far has received only limited attention. We present and elaborate here on a theoretical model for calculating the magnetic moment of inertia based on the torque-torque correlation model. Particularly, the method has been applied to bulk itinerant magnets and we show that numerical values are comparable with recent experimental measurements. The theoretical analysis shows that even though the moment of inertia and damping are produced by the spin-orbit coupling, and the expression for them have common features, they are caused by very different electronic structure mechanisms. We propose ways to utilise this in order to tune the inertia experimentally, and to find materials with significant inertia dynamics.

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

Science.gov (United States)

Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

2017-12-01

We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

Magnon-mediated Dzyaloshinskii-Moriya torque in homogeneous ferromagnets

KAUST Repository

Manchon, Aurelien

2014-12-01

In thin magnetic layers with structural inversion asymmetry and spin-orbit coupling, the Dzyaloshinskii-Moriya interaction arises at the interface. When a spin-wave current jm flows in a system with a homogeneous magnetization m, this interaction produces an effective fieldlike torque of the form TFLm×(z×jm) as well as a dampinglike torque, TDLm×[(z×jm)×m], the latter only in the presence of spin-wave relaxation (z is normal to the interface). These torques mediated by the magnon flow can reorient the time-averaged magnetization direction and display a number of similarities with the torques arising from the electron flow in a magnetic two-dimensional electron gas with Rashba spin-orbit coupling. This magnon-mediated spin-orbit torque can be efficient in the case of magnons driven by a thermal gradient.

State diagram of a perpendicular magnetic tunnel junction driven by spin transfer torque: A power dissipation approach

Energy Technology Data Exchange (ETDEWEB)

Lavanant, M. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Department of Physics, New York University, New York, NY 10003 (United States); Petit-Watelot, S. [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France); Kent, A.D. [Department of Physics, New York University, New York, NY 10003 (United States); Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198 – Université de Lorraine, Nancy (France)

2017-04-15

The state diagram of a magnetic tunnel junction with perpendicularly magnetized electrodes in the presence of spin-transfer torques is computed in a macrospin approximation using a power dissipation model. Starting from the macrospin's energy we determine the stability of energy extremum in terms of power received and dissipated, allowing the consideration of non-conservative torques associated with spin transfer and damping. The results are shown to be in agreement with those obtained by direct integration of the Landau-Lifshitz-Gilbert-Slonczewski equation. However, the power dissipation model approach is faster and shows the reason certain magnetic states are stable, such as states that are energy maxima but are stabilized by spin transfer torque. Breaking the axial system, such as by a tilted applied field or tilted anisotropy, is shown to dramatically affect the state diagrams. Finally, the influence of a higher order uniaxial anisotropy that can stabilize a canted magnetization state is considered and the results are compared to experimental data. - Highlights: • Methods to compute state Diagram (Voltage Versus Field) for perpendicular Magnetic Tunnel Junctions. • Comparison between the conventional LLG model and a model based on Power dissipation to study magnetization reversal in magnetic tunnel junction.

The straintronic spin-neuron

International Nuclear Information System (INIS)

Biswas, Ayan K; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

2015-01-01

In artificial neural networks, neurons are usually implemented with highly dissipative CMOS-based operational amplifiers. A more energy-efficient implementation is a ‘spin-neuron’ realized with a magneto-tunneling junction (MTJ) that is switched with a spin-polarized current (representing weighted sum of input currents) that either delivers a spin transfer torque or induces domain wall motion in the soft layer of the MTJ to mimic neuron firing. Here, we propose and analyze a different type of spin-neuron in which the soft layer of the MTJ is switched with mechanical strain generated by a voltage (representing weighted sum of input voltages) and term it straintronic spin-neuron. It dissipates orders of magnitude less energy in threshold operations than the traditional current-driven spin neuron at 0 K temperature and may even be faster. We have also studied the room-temperature firing behaviors of both types of spin neurons and find that thermal noise degrades the performance of both types, but the current-driven type is degraded much more than the straintronic type if both are optimized for maximum energy-efficiency. On the other hand, if both are designed to have the same level of thermal degradation, then the current-driven version will dissipate orders of magnitude more energy than the straintronic version. Thus, the straintronic spin-neuron is superior to current-driven spin neurons. (paper)

Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

Directory of Open Access Journals (Sweden)

G. A. Nemnes

2012-01-01

Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions

Science.gov (United States)

Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran

2018-02-01

We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

Science.gov (United States)

Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

Science.gov (United States)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Using torque switch settings and spring pack characteristics to determine actuator output torques

International Nuclear Information System (INIS)

Black, B.R.

1992-01-01

Actuator output torque of motor operated valves is often a performance parameter of interest. It is not always possible to directly measure this torque. Torque spring pack deflection directly reflects actuator output torque and can be directly measured on most actuators. The torque spring pack may be removed from the actuator and tested to determine its unique force-deflection relationship. Or, a representative force-deflection relationship for the particular spring pack model may be available. With either relationship, measurements of torque spring pack deflection may then be correlated to corresponding forces. If the effective length of the moment arm within the actuator is known, actuator output torque can then be determined. The output torque is simply the product of the effective moment arm length and the spring pack force. This paper presents the reliability of this technique as indicated by testing. TU Electric is evaluating this technique for potential use in the future. Results presented in this paper should be considered preliminary. Applicability of these results may be limited to actuators and their components in a condition similar to those for which test data have been examined

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)

2016-07-14

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

International Nuclear Information System (INIS)

Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui

2016-01-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

Energy Technology Data Exchange (ETDEWEB)

Zhou, Benliang [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China); Liu, Guang; Guo, Dan [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China)

2016-11-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Spin-orbit torques for current parallel and perpendicular to a domain wall

International Nuclear Information System (INIS)

Schulz, Tomek; Lee, Kyujoon; Karnad, Gurucharan V.; Alejos, Oscar; Martinez, Eduardo; Moretti, Simone; Hals, Kjetil M. D.; Garcia, Karin; Ravelosona, Dafiné; Vila, Laurent; Lo Conte, Roberto; Kläui, Mathias; Ocker, Berthold; Brataas, Arne

2015-01-01

We report field- and current-induced domain wall (DW) depinning experiments in Ta\\Co 20 Fe 60 B 20 \\MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents perpendicular to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared with previously used measurements for just two field directions (parallel and perpendicular to the DW) to determine the real torque strength and shows the sensitivity of the SOT to the precise DW structure and pinning sites

Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

OpenAIRE

Misiorny, Maciej; Barnaś, Józef

2013-01-01

Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom's/SMM's spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonan...

Effects on fatigue life of gate valves due to higher torque switch settings during operability testing

International Nuclear Information System (INIS)

Richins, W.D.; Snow, S.D.; Miller, G.K.; Russell, M.J.; Ware, A.G.

1995-12-01

Some motor operated valves now have higher torque switch settings due to regulatory requirements to ensure valve operability with appropriate margins at design basis conditions. Verifying operability with these settings imposes higher stem loads during periodic inservice testing. These higher test loads increase stresses in the various valve internal parts which may in turn increase the fatigue usage factors. This increased fatigue is judged to be a concern primarily in the valve disks, seats, yokes, stems, and stem nuts. Although the motor operators may also have significantly increased loading, they are being evaluated by the manufacturers and are beyond the scope of this study. Two gate valves representative of both relatively weak and strong valves commonly used in commercial nuclear applications were selected for fatigue analyses. Detailed dimensional and test data were available for both valves from previous studies at the Idaho National Engineering Laboratory. Finite element models were developed to estimate maximum stresses in the internal parts of the valves and to identity the critical areas within the valves where fatigue may be a concern. Loads were estimated using industry standard equations for calculating torque switch settings prior and subsequent to the testing requirements of USNRC Generic Letter 89--10. Test data were used to determine both; (1) the overshoot load between torque switch trip and final seating of the disk during valve closing and (2) the stem thrust required to open the valves. The ranges of peak stresses thus determined were then used to estimate the increase in the fatigue usage factors due to the higher stem thrust loads. The usages that would be accumulated by 100 base cycles plus one or eight test cycles per year over 40 and 60 years of operation were calculated

Optical switching of nuclear spin-spin couplings in semiconductors.

Science.gov (United States)

Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

2011-07-05

Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.

Gate-controlled switching between persistent and inverse persistent spin helix states

International Nuclear Information System (INIS)

Yoshizumi, K.; Sasaki, A.; Kohda, M.; Nitta, J.

2016-01-01

We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.

Gate-controlled switching between persistent and inverse persistent spin helix states

Energy Technology Data Exchange (ETDEWEB)

Yoshizumi, K.; Sasaki, A.; Kohda, M.; Nitta, J. [Department of Materials Science, Tohoku University, Sendai 980-8579 (Japan)

2016-03-28

We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.

Magnon-mediated Dzyaloshinskii-Moriya torque in homogeneous ferromagnets

KAUST Repository

Manchon, Aurelien; Ndiaye, Papa Birame; Moon, Jung-Hwan; Lee, Hyun-Woo; Lee, Kyung-Jin

2014-01-01

the time-averaged magnetization direction and display a number of similarities with the torques arising from the electron flow in a magnetic two-dimensional electron gas with Rashba spin-orbit coupling. This magnon-mediated spin-orbit torque can

Non-linear frequency and amplitude modulation of a nano-contact spin torque oscillator

OpenAIRE

Muduli, P. K.; Pogoryelov, Ye.; Bonetti, S.; Consolo, G.; Mancoff, Fred; Åkerman, Johan

2009-01-01

We study the current controlled modulation of a nano-contact spin torque oscillator. Three principally different cases of frequency non-linearity ($d^{2}f/dI^{2}_{dc}$ being zero, positive, and negative) are investigated. Standard non-linear frequency modulation theory is able to accurately describe the frequency shifts during modulation. However, the power of the modulated sidebands only agrees with calculations based on a recent theory of combined non-linear frequency and amplitude modulation.

Magnetic switching of a single molecular magnet due to spin-polarized current

Science.gov (United States)

Misiorny, Maciej; Barnaś, Józef

2007-04-01

Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

Spin-orbit torques for current parallel and perpendicular to a domain wall

Energy Technology Data Exchange (ETDEWEB)

Schulz, Tomek; Lee, Kyujoon; Karnad, Gurucharan V. [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, 55128 Mainz (Germany); Alejos, Oscar [Departamento de Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belen, 7, E-47011 Valladolid (Spain); Martinez, Eduardo; Moretti, Simone [Departamento Fisica Aplicada, Universidad de Salamanca, Plaza de los Caidos s/n, E-38008 Salamanca (Spain); Hals, Kjetil M. D. [Niels Bohr International Academy and the Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Garcia, Karin; Ravelosona, Dafiné [Institut d' Electronique Fondamentale, UMR CNRS 8622, Université Paris Sud, 91405 Orsay Cedex (France); Vila, Laurent [Institut Nanosciences et Cryogénie, Université Grenoble Alpes, F-38000 Grenoble (France); Institut Nanosciences et Cryogénie, CEA, F-38000 Grenoble (France); Lo Conte, Roberto; Kläui, Mathias [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, 55128 Mainz (Germany); Graduate School of Excellence “Materials Science in Mainz” (MAINZ), Staudinger Weg 9, 55128 Mainz (Germany); Ocker, Berthold [Singulus Technologies AG, 63796 Kahl am Main (Germany); Brataas, Arne [Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)

2015-09-21

We report field- and current-induced domain wall (DW) depinning experiments in Ta\\Co{sub 20}Fe{sub 60}B{sub 20}\\MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents perpendicular to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared with previously used measurements for just two field directions (parallel and perpendicular to the DW) to determine the real torque strength and shows the sensitivity of the SOT to the precise DW structure and pinning sites.

Spin rotation after a spin-independent scattering. Spin properties of an electron gas in a solid

International Nuclear Information System (INIS)

Zayets, V.

2014-01-01

It is shown that spin direction of an electron may not be conserved after a spin-independent scattering. The spin rotations occur due to a quantum-mechanical fact that when a quantum state is occupied by two electrons of opposite spins, the total spin of the state is zero and the spin direction of each electron cannot be determined. It is shown that it is possible to divide all conduction electrons into two group distinguished by their time-reversal symmetry. In the first group the electron spins are all directed in one direction. In the second group there are electrons of all spin directions. The number of electrons in each group is conserved after a spin-independent scattering. This makes it convenient to use these groups for the description of the magnetic properties of conduction electrons. The energy distribution of spins, the Pauli paramagnetism and the spin distribution in the ferromagnetic metals are described within the presented model. The effects of spin torque and spin-torque current are described. The origin of spin-transfer torque is explained within the presented model

A critical comparison of electrical methods for measuring spin-orbit torques

Science.gov (United States)

Zhang, Xuanzi; Hung, Yu-Ming; Rehm, Laura; Kent, Andrew D.

Direct (DC) and alternating current (AC) transport measurements of spin-orbit torques (SOTs) in heavy metal-ferromagnet heterostructure with perpendicular magnetic anisotropy have been proposed and demonstrated. A DC method measures the change of perpendicular magnetization component while an AC method probes the first and second harmonic magnetization oscillation in responses to an AC current (~1 kHz). Here we conduct both types of measurements on β-Ta/CoFeB/MgO in the form of patterned Hall bars (20 μm linewidth) and compare the results. Experiments results are qualitatively in agreement with a macro spin model including Slonzewski-like and a field-like SOTs. However, the effective field from the ac method is larger than that obtained from the DC method. We discuss the possible origins of the discrepancy and its implications for quantitatively determining SOTs. Research supported by the SRC-INDEX program, NSF-DMR-1309202 and NYU-DURF award.

Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

Science.gov (United States)

Misiorny, Maciej; Barnaś, Józef

2013-07-01

Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom’s or SMM’s spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonant peaks in the average values of the molecule’s spin and in the charge current. These features appear at some resonant fields and are observable when at least one of the electrodes is ferromagnetic.

Topological Material-Based Spin Devices

Science.gov (United States)

Zhang, Minhao; Wang, Xuefeng

Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

Envelope detection using temporal magnetization dynamics of resonantly interacting spin-torque oscillator

Science.gov (United States)

Nakamura, Y.; Nishikawa, M.; Osawa, H.; Okamoto, Y.; Kanao, T.; Sato, R.

2018-05-01

In this article, we propose the detection method of the recorded data pattern by the envelope of the temporal magnetization dynamics of resonantly interacting spin-torque oscillator on the microwave assisted magnetic recording for three-dimensional magnetic recording. We simulate the envelope of the waveform from recorded dots with the staggered magnetization configuration, which are calculated by using a micromagnetic simulation. We study the data detection methods for the envelope and propose a soft-output Viterbi algorithm (SOVA) for partial response (PR) system as a signal processing system for three dimensional magnetic recording.

Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories

Energy Technology Data Exchange (ETDEWEB)

Heinonen, O.

2014-10-05

Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.

In search of a quasi-zero dimensional quantum spin-switching device

International Nuclear Information System (INIS)

Hancock, Y.

2002-01-01

Full text: In this paper, we propose a theoretical mechanism and potential application for quantum spin switching systems of the generic NMMMMMN type. In this case, N and M respectively refer to non-magnetic and magnetic atoms, of a 7-site finite, inhomogeneous system. We base our understanding on recent investigations into the magnetic induction mechanism on the N-type sites. Such investigations were performed within the context of the Hubbard Model, using both Hartree-Fock and Exact Diagonalization studies. In this work, we have used exact diagonalization studies to probe the spin-spin (2-site) correlation results of these systems, as a function of the model parameters and electron filling. Such calculations were performed within the context of the Hubbard and the Extended Hubbard Models. We have used our results as a means of investigating the proposed quantum spin-switching mechanism within the context of the full many-body problem. In addition to investigating this mechanism, we aim to propose a more realistic theoretical context in which the potential of these systems can be further explored

Current-driven thermo-magnetic switching in magnetic tunnel junctions

Science.gov (United States)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect

KAUST Repository

Bang, Do; Yu, Jiawei; Qiu, Xuepeng; Wang, Yi; Awano, Hiroyuki; Manchon, Aurelien; Yang, Hyunsoo

2016-01-01

We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.

Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect

KAUST Repository

Bang, Do

2016-05-23

We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.

Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

Science.gov (United States)

Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

2018-04-01

This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

Spin torque oscillator for microwave assisted magnetization reversal

Science.gov (United States)

Taniguchi, Tomohiro; Kubota, Hitoshi

2018-05-01

A theoretical study is given for the self-oscillation excited in a spin torque oscillator (STO) consisting of an in-plane magnetized free layer and a perpendicularly magnetized pinned layer in the presence of a perpendicular magnetic field. This type of STO is a potential candidate for a microwave source of microwave assisted magnetization reversal (MAMR). It is, however, found that the self-oscillation applicable to MAMR disappears when the perpendicular field is larger than a critical value, which is much smaller than a demagnetization field. This result provides a condition that the reversal field of a magnetic recording bit by MAMR in nanopillar structure should be smaller than the critical value. The analytical formulas of currents determining the critical field are obtained, which indicate that a material with a small damping is not preferable to acheive a wide range of the self-oscillation applicable to MAMR, although such a material is preferable from the viewpoint of the reduction of the power consumption.

Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

Directory of Open Access Journals (Sweden)

X. G. Li

2016-01-01

Full Text Available As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

Electric-field assisted spin torque nano-oscillator and binary frequency shift keying modulation

Science.gov (United States)

Zhang, Xiangli; Chen, Hao-Hsuan; Zhang, Zongzhi; Liu, Yaowen

2018-04-01

Electric-controlled magnetization precession introduces technologically relevant possibility for developing spin torque nano-oscillators (STNO) with potential applications in microwave emission. Using the perpendicularly magnetized magnetic tunnel junction (MTJ), we show that the magnetization oscillation frequency can be tuned by the co-action of electric field and spin polarized current. The dynamical phase diagram of MTJ-based STNO is analytically predicted through coordinate transformation from the laboratory frame to the rotation frame, by which the nonstationary out-of-plane magnetization precession process is therefore transformed into the stationary process in the rotation frame. Furthermore, using this STNO as a microwave source, we numerically demonstrate that the bit signal can be transmitted by a binary frequency shift keying (BFSK) modulation technique. The BFSK scheme shows good modulation features with no transient state.

Torque sensor

Science.gov (United States)

Fgeppert, E.

1984-09-01

Mechanical means for sensing turning torque generated by the load forces in a rotary drive system is described. The sensing means is designed to operate with minimal effect on normal operation of the drive system. The invention can be employed in various drive systems, e.g., automotive engine-transmission power plants, electric motor-operated tools, and metal cutting machines. In such drive systems, the torque-sensing feature may be useful for actuation of various control devices, such as electric switches, mechanical clutches, brake actuators, fluid control valves, or audible alarms. The torque-sensing function can be used for safety overload relief, motor de-energization, engine fuel control transmission clutch actuation, remote alarm signal, tool breakage signal, etc.

A High Torque Segmented Outer Rotor Permanent Magnet Flux Switching Motor for Motorcycle Propulsion

Directory of Open Access Journals (Sweden)

Mbadiwe I Enwelum

2018-01-01

Full Text Available Electric scooters also known as electric motorcycle are viable and personal means of road transportation have been making their ways into the world markets now because in them, combustion engine with the use of fuel oil for propulsion have been completely eliminated for economic and environmental imperatives. Electric motor which converts electrical energy into mechanical energy is used to overcome the complication of combustion engine. As it is, everyone is opting for combustion engine free and fuel-less type of vehicle. For this reason, manufacturers have exhibited interest, making research on electric motor very attractive. Meanwhile, surface permanent magnet synchronous motor (SPMSM has been successfully developed having output torque of 110 Nm, the assembly of motor lacked mechanical strength between the rotor yoke and the mounted permanent magnet (PM which heats up during speed operation, resulting to poor performance. To overcome the challenges laced with SPMSM, this paper presents a novel design of 24 stator 14 pole outer rotor-permanent magnet flux switching motor (SOR-PMFSM capable of high torque and high performance. It employs an unconventional segmented rotor which has short flux path flow. It also embraces alternate stator tooth windings to reduce material cost. Design specifications and restriction with input DC current are the same with SPMSM. The 2D-FEA by JMAG, version 14 is used to examine the performance of the proposed motor in terms of cogging torque, back-emf, average torque, power and efficiency. Preliminary results showed that torque, power output and efficiency of the proposed motor are 1.9Nm times, 5.8kW times more than SPMSM and efficiency of 84% thus, can sustain acceleration for long distance travel.

Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

KAUST Repository

Ndiaye, Papa Birame

2017-10-31

In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are

Computerized Torque Control for Large dc Motors

Science.gov (United States)

Willett, Richard M.; Carroll, Michael J.; Geiger, Ronald V.

1987-01-01

Speed and torque ranges in generator mode extended. System of shunt resistors, electronic switches, and pulse-width modulation controls torque exerted by large, three-phase, electronically commutated dc motor. Particularly useful for motor operating in generator mode because it extends operating range to low torque and high speed.

Analysis of a cost effective method of establishing and maintaining torque switch settings in Limitorque operators

International Nuclear Information System (INIS)

Huskey, D.R.

1991-01-01

The arrival of Generic Letter 89-10 came as no surprise to many in the industry. The surprise was the apparent focus of the letter in light of the past history and experiences of the industry. Indeed, even the Attachment 1 list of '33' deficiencies reflects the true picture more accurately than the letter itself. From reviewing the 'GL-33', one can see that the vast majority of problems are maintenance or training related, or some combination of both. Hence, the bulk of solutions to these problems should also be focused on maintenance and training of maintenance and operations personnel. The one or two problems associated with 'stem thrust' or torque, however, are what the apparent bulk of the efforts to respond to the generic letter will ultimately entail. The reasons for this focus by the NRC seems to stem from some limited blow-down tests, which are still under review and are not necessarily representative of the majority of valves in the industry; coupled with repeated claims by certain diagnostic vendors as to the extent of the stem thrust problem based on their test results at the time. Hindsight now reflects that the problems were largely in methodology and interpretations errors of the data as opposed to real problems with the motor operated valves (MOVs) themselves. As a result however, the letter was issued, and many utilities have been put in a rather awkward position at the timing. First generation stem thrust measuring technology has proven to be full of pitfalls and methodology problems and is expensive on top of it all. State-of-the-art equipment is still undergoing growing pains. The purpose of this paper is to describe briefly a technique in use at a number of stations to set and maintain torque switch set points, i.e. use of a torque wrench combined with an ohmmeter to determine torque switch trip point. At least one station is utilizing the method to trend the spring pack relaxation phenomenon which Limitorque has been investigating

Tilted spin torque-driven ferromagnetic resonance in a perpendicular-analyzer magnetic trilayer

International Nuclear Information System (INIS)

Wang Rixing; He Pengbin; Liu Quanhui; Li Zaidong; Pan Anlian; Zou Bingsuo; Wang Yanguo

2010-01-01

A theoretical study is presented on the current-driven ferromagnetic resonance in the magnetic trilayers. On the basis of the Landau-Lifshitz-Gilbert-Slonczewski equation, we derive the output dc voltage for arbitrary anisotropy in the free and pinned layers by the linearization method. As an example, the resonance spectra of the tilted-polarizer and perpendicular-analyzer trilayer show that the equilibrium position, the resonant linewidth and the resonant location can be tuned by changing the magnitude and the direction of spin torque. The effective damping can be minimized through adjusting the current and the pinned-layer magnetization direction.

State diagram of spin-torque oscillator with perpendicular reference layer and planar field generation layer

Directory of Open Access Journals (Sweden)

Mengwei Zhang

2015-06-01

Full Text Available The state diagram of spin-torque oscillator (STO with perpendicular reference layer (REF and planar field generation layer (FGL was studied by a macrospin model and a micro-magnetic model. The state diagrams are calculated versus the current density, external field and external field angle. It was found that the oscillation in FGL could be controlled by current density combined with external field so as to achieve a wide frequency range. An optimized current and applied field region was given for microwave assisted magnetic recording (MAMR, considering both frequency and output field oscillation amplitude. The results of the macro-spin model were compared with those of the micro-magnetic model. The macro-spin model was qualitatively different from micro-magnetics and experimental results when the current density was large and the FGL was non-uniform.

SPICE modelling of magnetic tunnel junctions written by spin-transfer torque

Energy Technology Data Exchange (ETDEWEB)

Guo, W; Prenat, G; De Mestier, N; Baraduc, C; Dieny, B [SPINTEC, UMR(8191), INAC, CEA/CNRS/UJF, 17 Av. des Martyrs, 38054 Grenoble Cedex 9 (France); Javerliac, V; El Baraji, M, E-mail: guillaume.prenat@cea.f [CROCUS Technology, 5 Place Robert Schuman, 38025 Grenoble (France)

2010-06-02

Spintronics aims at extending the possibility of conventional electronics by using not only the charge of the electron but also its spin. The resulting spintronic devices, combining the front-end complementary metal oxide semiconductor technology of electronics with a magnetic back-end technology, employ magnetic tunnel junctions (MTJs) as core elements. With the intent of simulating a circuit without fabricating it first, a reliable MTJ electrical model which is applicable to the standard SPICE (Simulation Program with Integrated Circuit Emphasis) simulator is required. Since such a model was lacking so far, we present a MTJ SPICE model whose magnetic state is written by using the spin-transfer torque effect. This model has been developed in the C language and validated on the Cadence Virtuoso Platform with a Spectre simulator. Its operation is similar to that of the standard BSIM (Berkeley Short-channel IGFET Model) SPICE model of the MOS transistor and fully compatible with the SPICE electrical simulator. The simulation results obtained using this model have been found in good accord with those theoretical macrospin calculations and results.

High torque DC motor fabrication and test program

Science.gov (United States)

Makus, P.

1976-01-01

The testing of a standard iron and standard alnico permanent magnet two-phase, brushless dc spin motor for potential application to the space telescope has been concluded. The purpose of this study was to determine spin motor power losses, magnetic drag, efficiency and torque speed characteristics of a high torque dc motor. The motor was designed and built to fit an existing reaction wheel as a test vehicle and to use existing brass-board commutation and torque command electronics. The results of the tests are included in this report.

Wireless current sensing by near field induction from a spin transfer torque nano-oscillator

Energy Technology Data Exchange (ETDEWEB)

Ramaswamy, B. [Fischell Department of Bioengineering, University of Maryland, College Park, Maryland 20742 (United States); Algarin, J. M.; Waks, E., E-mail: edowaks@umd.edu [Institute for Research in Electronics and Applied Physics (IREAP), University of Maryland, College Park, Maryland 20742 (United States); Weinberg, I. N. [Weinberg Medical Physics LLC, Bethesda, Maryland 20817 (United States); Chen, Y.-J.; Krivorotov, I. N. [Department of Physics and Astronomy, University of California, Irvine, California 92697 (United States); Katine, J. A. [HGST Research Center, San Jose, California 95135 (United States); Shapiro, B. [Fischell Department of Bioengineering, University of Maryland, College Park, Maryland 20742 (United States); Institute for Systems Research (ISR), University of Maryland, College Park, Maryland 20742 (United States)

2016-06-13

We demonstrate that spin transfer torque nano-oscillators (STNO) can act as wireless sensors for local current. The STNO acts as a transducer that converts weak direct currents into microwave field oscillations that we detect using an inductive coil. We detect direct currents in the range of 300–700 μA and report them wirelessly to a receiving induction coil at distances exceeding 6.5 mm. This current sensor could find application in chemical and biological sensing and industrial inspection.

Spin injection, transport, and read/write operation in spin-based MOSFET

International Nuclear Information System (INIS)

Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi

2011-01-01

We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

Speed control with torque ripple reduction of switched reluctance motor by Hybrid Many Optimizing Liaison Gravitational Search technique

Directory of Open Access Journals (Sweden)

Nutan Saha

2017-06-01

Full Text Available This paper presents a control scheme for simultaneous control of the speed of Switched Reluctance Motor (SRM and minimizing the torque ripple employing Hybrid Many Optimizing Liaison Gravitational Search Algorithm (Hybrid MOLGSA technique. The control mechanism includes two controlling loops, the outer loop is governed for speed control and a current controller for the inner loop, intelligent selection of turn on and turn off angle for a 60 KW, 3-phase 6/8 SRM. It is noticed that the torque ripple coefficient, ISE of speed & current are reduced by 12.81%, 38.60%, 16.74% respectively by Hybrid MOLGSA algorithm compared to Gravitational Search Algorithm (GSA algorithm. It is also observed that the settling times for the controller using the parameter values for obtaining best values of torque ripple, Integral square error of speed and current are reduced by 51.25%, 58.04% and 59.375% by proposed Hybrid MOLGSA algorithm compared to the GSA algorithm.

Temperature induced Spin Switching in SmFeO3 Single Crystal

Science.gov (United States)

Cao, Shixun; Zhao, Huazhi; Kang, Baojuan; Zhang, Jincang; Ren, Wei

2014-08-01

The prospect of controlling the magnetization (M) of a material is of great importance from the viewpoints of fundamental physics and future applications of emerging spintronics. A class of rare-earth orthoferrites RFeO3 (R is rare-earth element) materials exhibit striking physical properties of spin switching and magnetization reversal induced by temperature and/or applied magnetic field. Furthermore, due to the novel magnetic, magneto-optic and multiferroic properties etc., RFeO3 materials are attracting more and more interests in recent years. We have prepared and investigated a prototype of RFeO3 materials, namely SmFeO3 single-crystal. And we report magnetic measurements upon both field cooling (FC) and zero-field cooling (ZFC) of the sample, as a function of temperature and applied magnetic field. The central findings of this study include that the magnetization of single-crystal SmFeO3 can be switched by temperature, and tuning the magnitude of applied magnetic field allows us to realize such spin switching even at room temperature.

Impact of Disorder on Spin Dependent Transport Phenomena

KAUST Repository

Saidaoui, Hamed

2016-07-03

The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using

High-data-transfer-rate read heads composed of spin-torque oscillators

International Nuclear Information System (INIS)

Mizushima, K; Kudo, K; Nagasawa, T; Sato, R

2011-01-01

The signal-to-noise ratios (SNRs) of the high-data-transfer-rate read heads beyond 3 Gbits/s composed of spin-torque oscillators (STOs) are calculated under the thermal magnetization fluctuations by using the recent nonlinear theories. The STO head senses the media field as a modulation in the oscillation frequency, enabling high signal transfer rates beyond the limit of ferromagnetic relaxation. The output (digital) signal is obtained by FM (frequency modulation) detection, which is commonly used in communication technologies. As the problem of rapid phase diffusion in STOs caused by the thermal fluctuations is overcome by employing a delay detection method, the sufficiently large SNRs are obtained even in nonlinear STOs less than 30 x 30 nm 2 in size.

Induction machine Direct Torque Control system based on fuzzy adaptive control

Science.gov (United States)

Li, Shi-ping; Yu, Yan; Jiao, Zhen-gang; Gu, Shu-sheng

2009-07-01

Direct Torque Control technology is a high-performance communication control method, it uses the space voltage vector method, and then to the inverter switch state control, to obtain high torque dynamic performance. But none of the switching states is able to generate the exact voltage vector to produce the desired changes in torque and flux in most of the switching instances. This causes a high ripple in torque. To solve this problem, a fuzzy implementation of Direct Torque Control of Induction machine is presented here. Error of stator flux, error of motor electromagnetic torque and position of angle of flux are taken as fuzzy variables. In order to further solve nonlinear problem of variation parameters in direct torque control system, the paper proposes a fuzzy parameter PID adaptive control method which is suitable for the direct torque control of an asynchronous motor. The generation of its fuzzy control is obtained by analyzing and optimizing PID control step response and combining expert's experience. For this reason, it carries out fuzzy work to PID regulator of motor speed to achieve to regulate PID parameters. Therefore the control system gets swifter response velocity, stronger robustness and higher precision of velocity control. The computer simulated results verify the validity of this novel method.

Exploiting adiabatically switched RF-field for manipulating spin hyperpolarization induced by parahydrogen

International Nuclear Information System (INIS)

Kiryutin, Alexey S.; Yurkovskaya, Alexandra V.; Lukzen, Nikita N.; Ivanov, Konstantin L.; Vieth, Hans-Martin

2015-01-01

A method for precise manipulation of non-thermal nuclear spin polarization by switching a RF-field is presented. The method harnesses adiabatic correlation of spin states in the rotating frame. A detailed theory behind the technique is outlined; examples of two-spin and three-spin systems prepared in a non-equilibrium state by Para-Hydrogen Induced Polarization (PHIP) are considered. We demonstrate that the method is suitable for converting the initial multiplet polarization of spins into net polarization: compensation of positive and negative lines in nuclear magnetic resonance spectra, which is detrimental when the spectral resolution is low, is avoided. Such a conversion is performed for real two-spin and three-spin systems polarized by means of PHIP. Potential applications of the presented technique are discussed for manipulating PHIP and its recent modification termed signal amplification by reversible exchange as well as for preparing and observing long-lived spin states

Quantum dot spin-V(E)CSELs: polarization switching and periodic oscillations

Science.gov (United States)

Li, Nianqiang; Alexandropoulos, Dimitris; Susanto, Hadi; Henning, Ian; Adams, Michael

2017-09-01

Spin-polarized vertical (external) cavity surface-emitting lasers [Spin-V(E)CSELs] using quantum dot (QD) material for the active region, can display polarization switching between the right- and left-circularly polarized fields via control of the pump polarization. In particular, our previous experimental results have shown that the output polarization ellipticity of the spin-V(E)CSEL emission can exhibit either the same handedness as that of the pump polarization or the opposite, depending on the experimental operating conditions. In this contribution, we use a modified version of the spin-flip model in conjunction with combined time-independent stability analysis and direct time integration. With two representative sets of parameters our simulation results show good agreement with experimental observations. In addition periodic oscillations provide further insight into the dynamic properties of spin-V(E)CSELs.

Imaging Spin Dynamics on the Nanoscale using X-Ray Microscopy

Directory of Open Access Journals (Sweden)

Hermann eStoll

2015-04-01

Full Text Available The dynamics of emergent magnetic quasiparticles, such as vortices, domain walls, and bubbles are studied by scanning transmission x-ray microscopy (STXM, combining magnetic (XMCD contrast with about 25 nm lateral resolution as well as 70 ps time resolution. Essential progress in the understanding of magnetic vortex dynamics is achieved by vortex core reversal observed by sub-GHz excitation of the vortex gyromode, either by ac magnetic fields or spin transfer torque. The basic switching scheme for this vortex core reversal is the generation of a vortex-antivortex pair. Much faster vortex core reversal is obtained by exciting azimuthal spin wave modes with (multi-GHz rotating magnetic fields or orthogonal monopolar field pulses in x and y direction, down to 45 ps in duration. In that way unidirectional vortex core reversal to the vortex core 'down' or 'up' state only can be achieved with switching times well below 100 ps. Coupled modes of interacting vortices mimic crystal properties. The individual vortex oscillators determine the properties of the ensemble, where the gyrotropic mode represents the fundamental excitation. By self-organized state formation we investigate distinct vortex core polarization configurations and understand these eigenmodes in an extended Thiele model. Analogies with photonic crystals are drawn. Oersted fields and spin-polarized currents are used to excite the dynamics of domain walls and magnetic bubbles. From the measured phase and amplitude of the displacement of domain walls we deduce the size of the non-adiabatic spin-transfer torque. For sensing applications, the displacement of domain walls is studied and a direct correlation between domain wall velocity and spin structure is found. Finally the synchronous displacement of multiple domain walls using perpendicular field pulses is demonstrated as a possible paradigm shift for magnetic memory and logic applications.

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

Energy Technology Data Exchange (ETDEWEB)

Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

Study on spin filtering and switching action in a double-triangular network chain

Science.gov (United States)

Zhang, Yongmei

2018-04-01

Spin transport properties of a double-triangular quantum network with local magnetic moment on backbones and magnetic flux penetrating the network plane are studied. Numerical simulation results show that such a quantum network will be a good candidate for spin filter and spin switch. Local dispersion and density of states are considered in the framework of tight-binding approximation. Transmission coefficients are calculated by the method of transfer matrix. Spin transmission is regulated by substrate magnetic moment and magnetic flux piercing those triangles. Experimental realization of such theoretical research will be conducive to designing of new spintronic devices.

Non-stochastic switching and emergence of magnetic vortices in artificial quasicrystal spin ice

Energy Technology Data Exchange (ETDEWEB)

Bhat, V.S., E-mail: vinayak.bhat@uky.edu [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States); Farmer, B.; Smith, N.; Teipel, E.; Woods, J. [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States); Sklenar, J.; Ketterson, J.B. [Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208-3112 (United States); Hastings, J.T. [Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY 40506-0055 (United States); De Long, L.E. [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States)

2014-08-15

Highlights: • We studied magnetic reversal in a fivefold rotational symmetric artificial quasicrystal spin ice. • Our experiments and simulations suggest the presence of non-stochastic switching in the quasicrystal. • Simulations reveal a strong connection between FM reversal and formation of vortex loops in the quasicrystal. • Our study shows that the magnetic reversal in the artificial quasicrystal is a collective phenomenon. - Abstract: Previous studies of artificial spin ice have been largely restricted to periodic dot lattices. Ferromagnetic switching of segments in an applied magnetic field is stochastic in periodic spin ice systems, which makes emergent phenomena, such as the formation of vortex loops, hard to control or predict. We fabricated finite, aperiodic Penrose P2 tilings as antidot lattices with fivefold rotational symmetry in permalloy thin films. Measurements of the field dependence of the static magnetization reveal reproducible knee anomalies whose number and form are temperature dependent, which suggests they mark cooperative rearrangements of the tiling magnetic texture. Our micromagnetic simulations of the P2 tiling are in good agreement with experimental magnetization data and exhibit non-stochastic magnetic switching of segments in applied field, and vortex loops that are stable over an extended field interval during magnetic reversal.

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

Magnetic proximity control of spin currents and giant spin accumulation in graphene

Science.gov (United States)

Singh, Simranjeet

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Bahniman, E-mail: bghosh@utexas.edu; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Road, Bldg. 160, Austin, Texas 78758 (United States)

2016-07-21

In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

International Nuclear Information System (INIS)

Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

2016-01-01

In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

Artificial Intelligence-based control for torque ripple minimization in switched reluctance motor drives - doi: 10.4025/actascitechnol.v36i1.18097

Directory of Open Access Journals (Sweden)

Kalaivani Lakshmanan

2014-01-01

Full Text Available In this paper, various intelligent controllers such as Fuzzy Logic Controller (FLC and Adaptive Neuro Fuzzy Inference System (ANFIS-based current compensating techniques are employed for minimizing the torque ripples in switched reluctance motor. FLC and ANFIS controllers are tuned using MATLAB Toolbox. For the purpose of comparison, the performance of conventional Proportional-Integral (PI controller is also considered. The statistical parameters like minimum, maximum, mean, standard deviation of total torque, torque ripple coefficient and the settling time of speed response for various controllers are reported. From the simulation results, it is found that both FLC and ANFIS controllers gives better performance than PI controller. Among the intelligent controllers, ANFIS gives outer performance than FLC due to its good learning and generalization capabilities thereby improves the dynamic performance of SRM drives.

Fast switching of bistable magnetic nanowires through collective spin reversal

Science.gov (United States)

Vindigni, Alessandro; Rettori, Angelo; Bogani, Lapo; Caneschi, Andrea; Gatteschi, Dante; Sessoli, Roberta; Novak, Miguel A.

2005-08-01

The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.

All-optical spin switching: A new frontier in femtomagnetism — A short review and a simple theory

Science.gov (United States)

Zhang, G. P.; Latta, T.; Babyak, Z.; Bai, Y. H.; George, Thomas F.

2016-08-01

Using an ultrafast laser pulse to manipulate the spin degree of freedom has broad technological appeal. It allows one to control the spin dynamics on a femtosecond time scale. The discipline, commonly called femtomagnetism, started with the pioneering experiment by Beaurepaire and coworkers in 1996, who showed subpicosecond demagnetization occurs in magnetic Ni thin films. This finding has motivated extensive research worldwide. All-optical helicity-dependent spin switching (AO-HDS) represents a new frontier in femtomagnetism, where a single ultrafast laser pulse can permanently switch spin without any assistance from a magnetic field. This review summarizes some of the crucial aspects of this new discipline: key experimental findings, leading mechanisms, controversial issues, and possible future directions. The emphasis is on our latest investigation. We first develop the all-optical spin switching (AOS) rule that determines how the switchability depends on the light helicity. This rule allows one to understand microscopically how the spin is reversed and why the circularly polarized light appears more powerful than the linearly polarized light. Then we invoke our latest spin-orbit coupled harmonic oscillator model to simulate single spin reversal. We consider both continuous wave (cw) excitation and pulsed laser excitation. The results are in a good agreement with the experimental result (a MatLab code is available upon request from the author). We then extend the code to include the exchange interaction among different spin sites. We show where the “inverse-Faraday field” comes from and how the laser affects the spin reversal nonlinearly. Our hope is that this review will motivate new experimental and theoretical investigations and discussions.

Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector

Science.gov (United States)

Kuszewski, P.; Camara, I. S.; Biarrotte, N.; Becerra, L.; von Bardeleben, J.; Savero Torres, W.; Lemaître, A.; Gourdon, C.; Duquesne, J.-Y.; Thevenard, L.

2018-06-01

We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The reversed domains are in both geometries several hundreds of , much larger than has been shown using spin transfer torque- or field-driven precessional switching. We show that surface acoustic waves can travel at least 1 mm before addressing a given area, and can interfere to create magnetic stripes that can be positioned with a sub-micronic precision.

Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

OpenAIRE

Misiorny, Maciej; Barnas, Józef

2006-01-01

Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

Manipulating the spin states in a double molecular magnets tunneling junction

Energy Technology Data Exchange (ETDEWEB)

Jiang, Liang; Liu, Xi [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Zhengzhong, E-mail: zeikeezhang@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123 (China); Wang, Ruiqiang [Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006 (China)

2014-01-17

We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology and has potential applications in molecular spintronics or quantum information processing.

Manipulating the spin states in a double molecular magnets tunneling junction

Science.gov (United States)

Jiang, Liang; Liu, Xi; Zhang, Zhengzhong; Wang, Ruiqiang

2014-01-01

We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology [6] and has potential applications in molecular spintronics or quantum information processing.

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

Directory of Open Access Journals (Sweden)

Austin Deschenes

2016-11-01

Full Text Available Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM. Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ, most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

Robust and Selective Switching of an FeIII Spin-Crossover Compound on Cu2N/Cu(100) with Memristance Behavior.

Science.gov (United States)

Jasper-Toennies, Torben; Gruber, Manuel; Karan, Sujoy; Jacob, Hanne; Tuczek, Felix; Berndt, Richard

2017-11-08

The switching between two spin states makes spin-crossover molecules on surfaces very attractive for potential applications in molecular spintronics. Using scanning tunneling microscopy, the successful deposition of [Fe(pap) 2 ] + (pap = N-2-pyridylmethylidene-2-hydroxyphenylaminato) molecules on Cu 2 N/Cu(100) surface is evidenced. The deposited Fe III spin-crossover compound is controllably switched between three different states, each of them exhibiting a characteristic tunneling conductance. The conductance is therefore employed to readily read the state of the molecules. A comparison of the experimental data with the results of density functional theory calculations reveals that all Fe(pap) 2 molecules are initially in their high-spin state. The two other states are compatible with the low-spin state of the molecule but differ with respect to their coupling to the substrate. As a proof of concept, the reversible and selective nature of the switching is used to build a two-molecule memory.

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Science.gov (United States)

Majidi, Leyla; Asgari, Reza

2014-10-01

We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley- and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley- and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β ) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures, whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h ) in F region displays a maximum value at h <λ , which moves towards larger exchange fields by increasing the temperature.

Switching and sensing spin states of co-porphyrin in bimolecular reactions on Au111 using scanning tunneling microscopy.

Science.gov (United States)

Kim, Howon; Chang, Yun Hee; Lee, Soon-Hyeong; Kim, Yong-Hyun; Kahng, Se-Jong

2013-10-22

Controlling and sensing spin states of magnetic molecules at the single-molecule level is essential for spintronic molecular device applications. Here, we demonstrate that spin states of Co-porphyrin on Au(111) can be reversibly switched over by binding and unbinding of the NO molecule and can be sensed using scanning tunneling microscopy and spectroscopy (STM and STS). Before NO exposure, Co-porphryin showed a clear zero-bias peak, a signature of Kondo effect in STS, whereas after NO exposures, it formed a molecular complex, NO-Co-porphyrin, that did not show any zero-bias feature, implying that the Kondo effect was switched off by binding of NO. The Kondo effect could be switched back on by unbinding of NO through single-molecule manipulation or thermal desorption. Our density functional theory calculation results explain the observations with pairing of unpaired spins in dz(2) and ppπ* orbitals of Co-porphyrin and NO, respectively. Our study opens up ways to control molecular spin state and Kondo effect by means of enormous variety of bimolecular binding and unbinding reactions on metallic surfaces.

Role of motive forces for the spin torque transfer for nano-structures

Science.gov (United States)

Barnes, Stewart

2009-03-01

Despite an announced imminent commercial realization of spin transfer random access memory (SPRAM) the current theory evolved from that of Slonczewski [1,2] does not conserve energy. Barnes and Maekawa [3] have shown, in order correct this defect, forces which originate from the spin rather than the charge of an electron must be accounted for, this leading to the concept of spin-motive-forces (smf) which must appear in Faraday's law and which significantly modifies the theory for spin-valves and domain wall devices [4]. A multi-channel theory in which these smf's redirect the spin currents will be described. In nano-structures it is now well known that the Kondo effect is reflected by conductance peaks. In essence, the spin degrees of freedom are used to enhance conduction. In a system with nano-magnets and a Coulomb blockade [5] the similar spin channels can be the only means of effective conduction. This results in a smf which lasts for minutes and an enormous magneto-resistance [5]. This implies the possibility of ``single electron memory'' in which the magnetic state is switched by a single electron. [4pt] [1] J. C. Slonczewski, Current-Driven Excitation of Magnetic Multilayers J. Magn. Magn. Mater. 159, L1 (1996). [0pt] [2] Y. Tserkovnyak, A. Brataas, G. E. W. Bauer, and B. I. Halperin, Nonlocal magnetization dynamics in ferromagnetic heterostructures, Rev. Mod. Phys. 77, 1375 (2005). [0pt] [3] S. E. Barnes and S. Maekawa, Generalization of Faraday's Law to Include Nonconservative Spin Forces Phys. Rev. Lett. 98, 246601 (2007); S. E. Barnes and S. Maekawa, Currents induced by domain wall motion in thin ferromagnetic wires. arXiv:cond-mat/ 0410021v1 (2004). [0pt] [4] S. E., Barnes, Spin motive forces, measurement, and spin-valves. J. Magn. Magn. Mat. 310, 2035-2037 (2007); S. E. Barnes, J. Ieda. J and S. Maekawa, Magnetic memory and current amplification devices using moving domain walls. Appl. Phys. Lett. 89, 122507 (2006). [0pt] [5] Pham-Nam Hai, Byung-Ho Yu

Gravitational torque frequency analysis for the Einstein elevator experiment

Energy Technology Data Exchange (ETDEWEB)

Ashenberg, Joshua [Harvard-Smithsonian Center for Astrophysics (CfA), Cambridge, MA (United States); Lorenzini, Enrico C [University of Padova, Padua (Italy)

2007-09-07

Testing the principle of equivalence with a differential acceleration detector that spins while free falling requires a reliable extraction of a very small violation signal from the noise in the output signal frequency spectrum. The experiment is designed such that the violation signal is modulated by the spin of the test bodies. The possible violation signal is mixed with the intrinsic white noise of the detector and the colored noise associated with the modulation of gravitational perturbations, through the spin, and inertial-motion-related noise. In order to avoid false alarms the frequencies of the gravitational disturbances and the violation signal must be separate. This paper presents a model for the perturbative gravitational torque that affects the measurement. The torque is expanded in an asymptotic series to the fourth order and then expressed as a frequency spectrum. A spectral analysis shows the design conditions for frequency separation between the perturbing torque and the violation signal.

Synchronization of vortex-based spin torque nano-oscillators by magnetostatic coupling

Energy Technology Data Exchange (ETDEWEB)

Zaspel, C.E., E-mail: craig.zaspel@umwestern.edu

2015-12-15

Synchronization of two nanopillar oscillators driven by spin torque and coupled through the magnetic dipolar interaction. The dominant mode in each oscillator is gyrotropic motion of the vortex core in an elliptical orbit about the free layer disk center. The dynamic properties of this mode is investigated by solution the coupled Thiele equations with both nanopillar oscillators having identical dimensions, but with a current mismatch. It is noticed that there is a range in the current difference where the oscillators will be synchronized where the vortex gyrotropic motion will be frequency-locked with the radii of gyrotropic motion equal for both disks. There is, however, a phase shift between the gyrotropic motion with the smaller current disk lagging the higher current disk by a few degrees. - Highlights: • Vortex-based nanopillar oscillators re synchronized by the dipolar interaction. • There is a range of frequencies where both oscillators will frequency-locked. • There are upper and lower critical currents defining a locking range.

Superconductivity switch from spin-singlet to -triplet pairing in a topological superconducting junction

Science.gov (United States)

Tao, Ze; Chen, F. J.; Zhou, L. Y.; Li, Bin; Tao, Y. C.; Wang, J.

2018-06-01

The interedge coupling is the cardinal characteristic of the narrow quantum spin Hall (QSH) insulator, and thus could bring about exotic transport phenomena. Herein, we present a theoretical investigation of the spin-resolved Andreev reflection (AR) in a QSH insulator strip touching on two neighbouring ferromagnetic insulators and one s-wave superconductor. It is demonstrated that, due to the interplay of the interedge coupling and ferromagnetic configuration, there could be not only usual local ARs leading to the spin-singlet pairing with the incident electron and Andreev-reflected hole from different spin subbands, but also novel local ARs giving rise to the spin-triplet pairing from the same spin subband. However, only the latter exists in the absence of the interedge coupling, and therefore the two pairings in turn testify the helical spin texture of the edge states. By proper tuning of the band structures of the ferromagnetic layers, under the resonance bias voltage, the usual and novel local ARs of can be all exhibited, resulting in fully spin-polarized pure spin-singlet superconductivity and pure spin-triplet superconductivity, respectively, which suggests a superconductivity switch from spin-singlet to -triplet pairing by electrical control. The results can be experimentally confirmed by the tunneling conductance and the noise power.

Optical switching of nuclear spin–spin couplings in semiconductors

Science.gov (United States)

Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

2011-01-01

Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear–spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings. PMID:21730962

Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

International Nuclear Information System (INIS)

Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

2014-01-01

Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

Magnetic droplets in nano-contact spin-torque oscillators with perpendicular magnetic anisotropy

Science.gov (United States)

Åkerman, Johan

2013-03-01

The theoretical prediction, by Ivanov and Kosevich, of ``magnon drop'' solitons in thin films with perpendicular magnetic anisotropy (PMA) and zero damping, dates back to the 1970s. More recently, Hoefer, Silva and Keller, demonstrated analytically and numerically that related ``magnetic droplet'' solitons should be possible to excite in nano-contact spin-torque oscillators (NC-STOs) based on PMA materials, where spin transfer torque locally realizes the zero-damping condition required in. In my talk, I will present the first experimental demonstration of such magnetic droplets, realized using 50-100 nm diameter nano-contacts (NCs) fabricated on top of orthogonal GMR stacks of Co8/Cu/Co0.3[Ni0.8/Co0.4]x4 (thicknesses in nm). The nucleation of a magnetic droplet manifests itself as a dramatic 10 GHz drop in microwave signal frequency at a drive-current dependent critical perpendicular field of the order of 0.5 - 1 T. The drop in frequency is accompanied by a simultaneous sharp resistance increase of the device and a sign change of its magnetoresistance, directly indicating the existence of a reversed magnetization in a region of the [Co/Ni] free layer underneath the NC. As predicted by numerical simulations the droplet exhibits rich magnetodynamic properties, experimentally observed as auto-modulation at approximately 1 GHz and sometimes sidebands at 1/2 and 3/2 of the fundamental droplet frequency. The 1 GHz modulation can be shown numerically to be related to the drift instability of the droplet, albeit with enough restoring force to make the droplet perform a periodic motion instead of leaving the NC region. The sidebands at 1/2 and 3/2 the droplet frequency are related to eigenmodes of the droplet perimeter. Magnetic droplet nucleation is found to be robust and reproducible over a wide number of NC-STOs with different NC sizes, making this new nanomagnetic object as fundamental and potentially useful to nanomagnetism as e.g. domain walls and vortices. Support

Starquake-induced Magnetic Field and Torque Evolution in Neutron Stars

International Nuclear Information System (INIS)

Link, B.; Franco, L.M.; Epstein, R.I.

1998-01-01

The persistent increases in spin-down rate (offsets) seen to accompany glitches in the Crab and other pulsars suggest increases in the spin-down torque. We interpret these offsets as due to starquakes occurring as the star spins down and the rigid crust becomes less oblate. We study the evolution of strain in the crust, the initiation of starquakes, and possible consequences for magnetic field and torque evolution. Crust cracking occurs as equatorial material shears under the compressive forces arising from the star's decreasing circumference and as matter moves to higher latitudes along a fault inclined to the equator. A starquake is most likely to originate near one of the two points on the rotational equator farthest from the magnetic poles. The material breaks along a fault approximately aligned with the magnetic poles. We suggest that the observed offsets come about when a starquake perturbs the star's mass distribution, producing a misalignment of the angular momentum and spin axes. Subsequently, damped precession to a new rotational state increases the angle α between the rotation and magnetic axes. The resulting increase in external torque appears as a permanent increase in the spin-down rate. Repeated starquakes would continue to increase α, making the pulsar more of an orthogonal rotator. copyright copyright 1998. The American Astronomical Society

Spin Transport in Ferromagnetic and Antiferromagnetic Textures

KAUST Repository

Akosa, Collins A.

2016-12-07

In this dissertation, we provide an accurate description of spin transport in magnetic textures and in particular, we investigate in detail, the nature of spin torque and magnetic damping in such systems. Indeed, as will be further discussed in this thesis, the current-driven velocity of magnetic textures is related to the ratio between the so-called non-adiabatic torque and magnetic damping. Uncovering the physics underlying these phenomena can lead to the optimal design of magnetic systems with improved efficiency. We identified three interesting classes of systems which have attracted enormous research interest (i) Magnetic textures in systems with broken inversion symmetry: We investigate the nature of magnetic damping in non-centrosymmetric ferromagnets. Based on phenomenological and microscopic derivations, we show that the magnetic damping becomes chiral, i.e. depends on the chirality of the magnetic texture. (ii) Ferromagnetic domain walls, skyrmions and vortices: We address the physics of spin transport in sharp disordered magnetic domain walls and vortex cores. We demonstrate that upon spin-independent scattering, the non-adiabatic torque can be significantly enhanced. Such an enhancement is large for vortex cores compared to transverse domain walls. We also show that the topological spin currents owing in these structures dramatically enhances the non-adiabaticity, an effect unique to non-trivial topological textures (iii) Antiferromagnetic skyrmions: We extend this study to antiferromagnetic skyrmions and show that such an enhanced topological torque also exist in these systems. Even more interestingly, while such a non-adiabatic torque inuences the undesirable transverse velocity of ferromagnetic skyrmions, in antiferromagnetic skyrmions, the topological non-adiabatic torque directly determines the longitudinal velocity. As a consequence, scaling down the antiferromagnetic skyrmion results in a much more efficient spin torque.

Toward nonlinear magnonics: Intensity-dependent spin-wave switching in insulating side-coupled magnetic stripes

Science.gov (United States)

Sadovnikov, A. V.; Odintsov, S. A.; Beginin, E. N.; Sheshukova, S. E.; Sharaevskii, Yu. P.; Nikitov, S. A.

2017-10-01

We demonstrate that the nonlinear spin-wave transport in two laterally parallel magnetic stripes exhibit the intensity-dependent power exchange between the adjacent spin-wave channels. By the means of Brillouin light scattering technique, we investigate collective nonlinear spin-wave dynamics in the presence of magnetodipolar coupling. The nonlinear intensity-dependent effect reveals itself in the spin-wave mode transformation and differential nonlinear spin-wave phase shift in each adjacent magnetic stripe. The proposed analytical theory, based on the coupled Ginzburg-Landau equations, predicts the geometry design involving the reduction of power requirement to the all-magnonic switching. A very good agreement between calculation and experiment was found. In addition, a micromagnetic and finite-element approach has been independently used to study the nonlinear behavior of spin waves in adjacent stripes and the nonlinear transformation of spatial profiles of spin-wave modes. Our results show that the proposed spin-wave coupling mechanism provides the basis for nonlinear magnonic circuits and opens the perspectives for all-magnonic computing architecture.

Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.

Science.gov (United States)

Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping

2018-01-09

The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

Spin switches for compact implementation of neuron and synapse

Energy Technology Data Exchange (ETDEWEB)

Quang Diep, Vinh, E-mail: vdiep@purdue.edu; Sutton, Brian; Datta, Supriyo [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Behin-Aein, Behtash [GLOBALFOUNDRIES, Inc., Sunnyvale, California 94085 (United States)

2014-06-02

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

Spin switches for compact implementation of neuron and synapse

International Nuclear Information System (INIS)

Quang Diep, Vinh; Sutton, Brian; Datta, Supriyo; Behin-Aein, Behtash

2014-01-01

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

KAUST Repository

Li, Lailai; Zhao, Yuelei; Zhang, Xixiang; Sun, Young

2017-01-01

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin

Episodic Spin-up and Spin-down Torque on Earth

Science.gov (United States)

Slabinski, Victor J.; Mendonca, Antonio A.

2018-04-01

Variations in Earth rotation angle are traditionally expressed by the time difference (ΔT=TT-UT1) between Terrestrial Time (TT) as told by atomic clocks and Universal Time UT1, the time variable used by the Earth-rotation formula. A plot of ΔT versus TT over the past 160 years shows a continuous curve with approximate straight-line segments with different spans of order ~20 years. Removing the tidal and seasonal variations from the data gives these line segments which represent the “decadal variations” in Earth rotation.The slope of a straight-line segment is proportional to the departure of Earth rotation rate from a reference value at the time. The change in slope over the relatively short time between segments indicates an episodic spin-up or spin-down in Earth rotation. The daily combination of VLBI, SLR, and other modern data available since 1973 gives us accurate, daily values of ΔT and the corresponding LOD (Length Of Day) values during these episodes. These allow us to determine the rotational acceleration occurring then.The three largest spin-speed changes found during the VLBI era have the following characteristics:Episode _____________ Duration__ ΔLOD__LOD Rate1983 Dec 30-1984 Jan 28 ... 29 d ...-0.65 ms ..-8.3 ms/y ..........spin-up1989 Mar 15-1989 May 23 ...69 d ....0.68 .......+3.6 ..............spin-down1994 Jan 21-2001 Apr 01 ... 6.5 y ...-2.2 .........-0.36 ..extended spin-upFor the first two episodes listed, we find the acceleration grows from zero (or at least a relatively small value) to its extreme value in ~1 day, stays approximately constant at this value for 29 or 69 days, and then decays back to zero over ~1 day. The acceleration, while it occurs, gives an LOD rate much greater than the 0.02 ms/y rate from tidal friction.The third episode shows that occasionally a several-year-long episode occurs. The acceleration magnitude is smaller but can make a larger total change in LOD (and spin rate). Tidal friction requires >100 y to equal

Spin Orbit Torque in Ferromagnetic Semiconductors

KAUST Repository

Li, Hang

2016-01-01

Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read' and `write' in memory devices can

Spin motive forces, 'measurements', and spin-valves

International Nuclear Information System (INIS)

Barnes, S.E.

2007-01-01

Discussed is the spin motive force (smf) produced by a spin valve, this reflecting its dynamics. Relaxation implies an implicit measurement of the magnetization of the free layer of a valve. It is shown this has implications for the angular dependence of the torque transfer. Some discussion of recent experiments is included

Femtosecond time-resolved optical and Raman spectroscopy of photoinduced spin crossover: temporal resolution of low-to-high spin optical switching.

Science.gov (United States)

Smeigh, Amanda L; Creelman, Mark; Mathies, Richard A; McCusker, James K

2008-10-29

A combination of femtosecond electronic absorption and stimulated Raman spectroscopies has been employed to determine the kinetics associated with low-spin to high-spin conversion following charge-transfer excitation of a FeII spin-crossover system in solution. A time constant of tau = 190 +/- 50 fs for the formation of the 5T2 ligand-field state was assigned based on the establishment of two isosbestic points in the ultraviolet in conjunction with changes in ligand stretching frequencies and Raman scattering amplitudes; additional dynamics observed in both the electronic and vibrational spectra further indicate that vibrational relaxation in the high-spin state occurs with a time constant of ca. 10 ps. The results set an important precedent for extremely rapid, formally forbidden (DeltaS = 2) nonradiative relaxation as well as defining the time scale for intramolecular optical switching between two electronic states possessing vastly different spectroscopic, geometric, and magnetic properties.

Vortex spin-torque oscillator stabilized by phase locked loop using integrated circuits

Directory of Open Access Journals (Sweden)

Martin Kreissig

2017-05-01

Full Text Available Spin-torque nano-oscillators (STO are candidates for the next technological implementation of spintronic devices in commercial electronic systems. For use in microwave applications, improving the noise figures by efficient control of their phase dynamics is a mandatory requirement. In order to achieve this, we developed a compact phase locked loop (PLL based on custom integrated circuits (ICs and demonstrate that it represents an efficient way to reduce the phase noise level of a vortex based STO. The advantage of our approach to phase stabilize STOs is that our compact system is highly reconfigurable e.g. in terms of the frequency divider ratio N, RF gain and loop gain. This makes it robust against device to device variations and at the same time compatible with a large range of STOs. Moreover, by taking advantage of the natural highly non-isochronous nature of the STO, the STO frequency can be easily controlled by e.g. changing the divider ratio N.

Spin–transfer torque oscillator in magnetic tunneling junction with short–wavelength magnon excitation

Directory of Open Access Journals (Sweden)

Shizhu Qiao

2018-05-01

Full Text Available Bloch–Bloembergen–Slonczewski (BBS equation is established by extending Bloch–Bloembergen equation, and it is used to study magnetization oscillation in the free magnetic layer of a magnetic tunneling junction. Since both short–wavelength magnon excitation and spin–transfer torque are taken into account in the BBS equation, it is distinguished from Landau–Lifshitz–Gilbert–Slonczewski equation. The macro–spin BBS model predicts that the transverse relaxation time in free magnetic layer should be long enough, as compared with the longitudinal relaxation time, to achieve stable magnetization oscillation for spin–transfer torque oscillator application. Moreover, field–like torque favors the tolerance of fast transverse relaxation, which makes magnetic tunneling junction a better choice than spin valve for the spin–transfer torque oscillator application.

Spin-resolved electron waiting times in a quantum-dot spin valve

Science.gov (United States)

Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

2018-04-01

We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

Science.gov (United States)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Asynchronous machines. Direct torque control; Machines asynchrones. Commande par controle direct de couple

Energy Technology Data Exchange (ETDEWEB)

Fornel, B. de [Institut National Polytechnique, 31 - Toulouse (France)

2006-05-15

The asynchronous machine, with its low cost and robustness, is today the most widely used motor to make speed variators. However, its main drawback is that the same current generates both the magnetic flux and the torque, and thus any torque variation creates a flux variation. Such a coupling gives to the asynchronous machine a nonlinear behaviour which makes its control much more complex. The direct self control (DSC) method has been developed to improve the low efficiency of the scalar control method and for the specific railway drive application. The direct torque control (DTC) method is derived from the DSC method but corresponds to other type of applications. The DSC and DTC algorithms for asynchronous motors are presented in this article: 1 - direct control of the stator flux (DSC): principle, flux control, torque control, switching frequency of the inverter, speed estimation; 2 - direct torque control (DTC): principle, electromagnetic torque derivative, signals shape and switching frequency, some results, DTC speed variator without speed sensor, DTC application to multi-machine multi-converter systems; 3 - conclusion. (J.S.)

Diameter dependence of emission power in MgO-based nano-pillar spin-torque oscillators

Energy Technology Data Exchange (ETDEWEB)

Wang, Bochong; Kubota, Hitoshi, E-mail: hit-kubota@aist.go.jp; Yakushiji, Kay; Tamaru, Shingo; Arai, Hiroko; Imamura, Hiroshi; Fukushima, Akio; Yuasa, Shinji [Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

2016-06-20

The dependence on diameter of the emission power in MgO-based nano-pillar spin torque oscillators (STOs) was systematically investigated. A maximum emission power of over 2.5 μW was obtained around 300 nm in diameter, which is the largest reported to date among the out-of-plane precession STOs. By analyzing physical quantities, precession cone angle of the free-layer magnetization was evaluated. In the diameter range below 300 nm, the increase in power was mainly due to the increase of the injected current. The power decrease above 300 nm is possibly attributed to the decrease in the averaged precession cone angle, suggesting spatial phase difference of magnetization precession. This study provides the method for estimating the optimum STO diameter, which is of great importance in practical use.

Laser-induced spin protection and switching in a specially designed magnetic dot: A theoretical investigation

Science.gov (United States)

Zhang, G. P.; Si, M. S.; George, T. F.

2011-04-01

Most laser-induced femtosecond magnetism investigations are done in magnetic thin films. Nanostructured magnetic dots, with their reduced dimensionality, present new opportunities for spin manipulation. Here we predict that if a magnetic dot has a dipole-forbidden transition between the lowest occupied molecular orbital (LUMO) and the highest unoccupied molecular orbital (HOMO), but a dipole-allowed transition between LUMO+1 and HOMO, electromagnetically induced transparency can be used to prevent ultrafast laser-induced spin momentum reduction, or spin protection. This is realized through a strong dump pulse to funnel the population into LUMO+1. If the time delay between the pump and dump pulses is longer than 60 fs, a population inversion starts and spin switching is achieved. These predictions are detectable experimentally.

Development and analysis of U-core switched reluctance machine

DEFF Research Database (Denmark)

Jæger, Rasmus; Nielsen, Simon Staal; Rasmussen, Peter Omand

2016-01-01

Switched reluctance machines (SRMs) have seen a lot of interest due to their rugged and fault tolerant construction as well as their high efficiency over a wide speed range. The technology however suffers from torque ripple, acoustic noise and low torque density. Many concepts to address these di......Switched reluctance machines (SRMs) have seen a lot of interest due to their rugged and fault tolerant construction as well as their high efficiency over a wide speed range. The technology however suffers from torque ripple, acoustic noise and low torque density. Many concepts to address...... and reduced flux reversal, reducing core losses. Due to an increased number of poles, torque density is increased and torque ripple reduced. A prototype is built and through a number of tests, the machine is mapped and all loss components are analysed. As a result of the analysis, an assessment is presented...

Current-driven parametric resonance in magnetic multilayers

International Nuclear Information System (INIS)

Wang, C; Seinige, H; Tsoi, M

2013-01-01

Current-induced parametric excitations were observed in point-contact spin-valve nanodevices. Point contacts were used to inject high densities of direct and microwave currents into spin valves, thus producing oscillating spin-transfer and Oersted-field torques on magnetic moments. The resulting magnetodynamics were observed electrically by measuring rectified voltage signals across the contact. In addition to the spin-torque-driven ferromagnetic resonance we observe doubled-frequency signals which correspond to the parametric excitation of magnetic moments. Numerical simulations suggest that while both spin-transfer torque and ac Oersted field contribute to the parametrically excited dynamics, the ac spin torque dominates, and dc spin torque can switch it on and off. The dc bias dependence of the parametric resonance signal enabled the mapping of instability regions characterizing the nonlinearity of the oscillation. (paper)

Intrinsic nonadiabatic topological torque in magnetic skyrmions and vortices

KAUST Repository

Akosa, Collins Ashu; Ndiaye, Papa Birame; Manchon, Aurelien

2017-01-01

We propose that topological spin currents flowing in topologically nontrivial magnetic textures, such as magnetic skyrmions and vortices, produce an intrinsic nonadiabatic torque of the form Tt∼[(∂xm×∂ym)·m]∂ym. We show that this torque, which is absent in one-dimensional domain walls and/or nontopological textures, is responsible for the enhanced nonadiabaticity parameter observed in magnetic vortices compared to one-dimensional textures. The impact of this torque on the motion of magnetic skyrmions is expected to be crucial, especially to determine their robustness against defects and pinning centers.

Intrinsic nonadiabatic topological torque in magnetic skyrmions and vortices

KAUST Repository

Akosa, Collins Ashu

2017-03-01

We propose that topological spin currents flowing in topologically nontrivial magnetic textures, such as magnetic skyrmions and vortices, produce an intrinsic nonadiabatic torque of the form Tt∼[(∂xm×∂ym)·m]∂ym. We show that this torque, which is absent in one-dimensional domain walls and/or nontopological textures, is responsible for the enhanced nonadiabaticity parameter observed in magnetic vortices compared to one-dimensional textures. The impact of this torque on the motion of magnetic skyrmions is expected to be crucial, especially to determine their robustness against defects and pinning centers.

Torque harmonics of an asynchronous motor supplied by a voltage- or current-sourced inverter quasi-square operation

Energy Technology Data Exchange (ETDEWEB)

Kyyrae, J. [Helsinki University of Technology, Institute of Intelligent Power Electronics, Espoo (Finland)

1997-12-31

Voltage- and current-sourced dc-ac converters operating in quasi-square area are compared. Their characteristics are calculated with switching vector, which is space-vector of switching functions. When the load is an asynchronous motor various analytical equations, including torque, are calculated efficiently. Motor current and torque approximations are compared with the simulated ones. (orig.) 6 refs.

Tunable magnetotransport in Fe/hBN/graphene/hBN/Pt(Fe) epitaxial multilayers

Science.gov (United States)

Magnus Ukpong, Aniekan

2018-03-01

Theoretical and computational analysis of the magnetotransport properties and spin-transfer torque field-induced switching of magnetization density in vertically-stacked multilayers is presented. Using epitaxially-capped free layers of Pt and Fe, atom-resolved magnetic moments and spin-transfer torques are computed at finite bias. The calculations are performed within linear response approximation to the spin-density reformulation of the van der Waals density functional theory. Dynamical spin excitations are computed as a function of a spin-transfer torque induced magnetic field along the magnetic easy axis, and the corresponding spin polarization perpendicular to the easy axis is obtained. Bias-dependent giant anisotropic magnetoresistance of up to 3200% is obtained in the nonmagnetic-metal-capped Fe/hBN/graphene/hBN/Pt multilayer architecture. Since this specific heterostructure is not yet fabricated and characterized, the predicted high performance has not been demonstrated experimentally. Nevertheless, similar calculations performed on the Fe/hBN/Co stack show that the tunneling magnetoresistance obtained at the Fermi-level is in excellent agreement with results of recent magnetotransport measurements on magnetic tunnel junctions that contain the monolayer hBN tunnel region. The magnitude of the spin-transfer torque is found to increase as the tunneling spin current increases, and this activates the magnetization switching process due to increased charge accumulation. This mechanism causes substantial spin backflow, which manifests as rapid undulations in the bias-dependent tunneling spin currents. The implication of these findings on the design of nanoscale spintronic devices with spin-transfer torque tunable magnetization density is discussed. Insights derived from this study are expected to enhance the prospects for developing and integrating artificially assembled van der Waals multilayer heterostructures as the preferred material platform for efficient

Characterizing the spin orbit torque field-like term in in-plane magnetic system using transverse field

Energy Technology Data Exchange (ETDEWEB)

Luo, Feilong [School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore); Data Storage Institute, A*STAR Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Goolaup, Sarjoosing; Li, Sihua; Lim, Gerard Joseph; Tan, Funan; Engel, Christian; Zhang, Senfu; Ma, Fusheng; Lew, Wen Siang, E-mail: wensiang@ntu.edu.sg [School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore); Zhou, Tiejun [Data Storage Institute, A*STAR Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)

2016-08-28

In this work, we present an efficient method for characterizing the spin orbit torque field-like term in an in-plane magnetized system using the harmonic measurement technique. This method does not require a priori knowledge of the planar and anomalous hall resistances and is insensitive to non-uniformity in magnetization, as opposed to the conventional harmonic technique. We theoretically and experimentally demonstrate that the field-like term in the Ta/Co/Pt film stack with in-plane magnetic anisotropy can be obtained by an in-plane transverse field sweep as expected, and magnetization non-uniformity is prevented by the application of fixed magnetic field. The experimental results are in agreement with the analytical calculations.

Magnetic Nanostructures Spin Dynamics and Spin Transport

CERN Document Server

Farle, Michael

2013-01-01

Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

Using a spin torque nano-oscillator to read memory based on the magnetic permeability

International Nuclear Information System (INIS)

Petrie, J R; Wieland, K A; Fischer, G A; Edelstein, A S; Urazhdin, S

2014-01-01

We present an archival memory utilizing a spin torque nano-oscillator (STNO) to read bits of data with different magnetic permeability. Basing a magnetic memory on this intrinsic property rather than remanent magnetization reduces the risk of data corruption. The permeability of the bits is read as changes in an applied probe field near the media. These changes in the probe field are measured by detecting microwave frequency shifts in STNOs. The probe field can be tuned over hundreds of Oe to optimize the reading of the media. Using a 400 Oe probe field, we have measured 2% frequency shifts in a STNO near micrometre-sized bits of (1) lithographically-patterned permalloy lines and (2) laser-crystallized Metglas lines. Data from either media was not corrupted by exposure to fields of 6400 Oe and temperatures of 523 K. (paper)

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

Science.gov (United States)

Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

2015-01-01

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

Using a spin torque nano-oscillator to read memory based on the magnetic permeability

Science.gov (United States)

Petrie, J. R.; Urazhdin, S.; Wieland, K. A.; Fischer, G. A.; Edelstein, A. S.

2014-02-01

We present an archival memory utilizing a spin torque nano-oscillator (STNO) to read bits of data with different magnetic permeability. Basing a magnetic memory on this intrinsic property rather than remanent magnetization reduces the risk of data corruption. The permeability of the bits is read as changes in an applied probe field near the media. These changes in the probe field are measured by detecting microwave frequency shifts in STNOs. The probe field can be tuned over hundreds of Oe to optimize the reading of the media. Using a 400 Oe probe field, we have measured 2% frequency shifts in a STNO near micrometre-sized bits of (1) lithographically-patterned permalloy lines and (2) laser-crystallized Metglas lines. Data from either media was not corrupted by exposure to fields of 6400 Oe and temperatures of 523 K.

Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

Science.gov (United States)

Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization

International Nuclear Information System (INIS)

Surawanitkun, C.; Kaewrawang, A.; Siritaratiwat, A.; Kruesubthaworn, A.; Sivaratana, R.; Jutong, N.; Mewes, C.K.A.; Mewes, T.

2015-01-01

For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important factors that have to be considered simultaneously. In this article, we examined the minimum energy for STT induced magnetization switching in MTJ devices for different in-plane angles of the magnetization in the free layer and the pinned layer with respect to the major axis of the elliptical cylinder of the cell. Simulations were performed by comparing the analytical solution with macrospin and full micromagnetic calculations. The results show good agreement of the switching energy calculated by using the three approaches for different initial angles of the magnetization of the free layer. Also, the low-energy location specifies the suitable value of both time and current in order to reduce the heat effect during the switching process. - Highlights: • Switching energy model was firstly examined with tiled magnetization in STT-RAM. • Simulation was performed by analytical solution, macrospin and micromagnetic models. • Low energy results from three models show agreement for tilt angle in free layer. • We also found an optimal tilt angle of the pinned layer. • Low-energy location specifies the suitable switching location to reduce heat effect

Role of spin diffusion in current-induced domain wall motion for disordered ferromagnets

KAUST Repository

Akosa, Collins Ashu; Kim, Won-Seok; Bisig, André ; Klä ui, Mathias; Lee, Kyung-Jin; Manchon, Aurelien

2015-01-01

Current-induced spin transfer torque and magnetization dynamics in the presence of spin diffusion in disordered magnetic textures is studied theoretically. We demonstrate using tight-binding calculations that weak, spin-conserving impurity scattering dramatically enhances the nonadiabaticity. To further explore this mechanism, a phenomenological drift-diffusion model for incoherent spin transport is investigated. We show that incoherent spin diffusion indeed produces an additional spatially dependent torque of the form ∼∇2[m×(u⋅∇)m]+ξ∇2[(u⋅∇)m], where m is the local magnetization direction, u is the direction of injected current, and ξ is a parameter characterizing the spin dynamics (precession, dephasing, and spin-flip). This torque, which scales as the inverse square of the domain wall width, only weakly enhances the longitudinal velocity of a transverse domain wall but significantly enhances the transverse velocity of vortex walls. The spatial-dependent spin transfer torque uncovered in this study is expected to have significant impact on the current-driven motion of abrupt two-dimensional textures such as vortices, skyrmions, and merons.

Role of spin diffusion in current-induced domain wall motion for disordered ferromagnets

KAUST Repository

Akosa, Collins Ashu

2015-03-12

Current-induced spin transfer torque and magnetization dynamics in the presence of spin diffusion in disordered magnetic textures is studied theoretically. We demonstrate using tight-binding calculations that weak, spin-conserving impurity scattering dramatically enhances the nonadiabaticity. To further explore this mechanism, a phenomenological drift-diffusion model for incoherent spin transport is investigated. We show that incoherent spin diffusion indeed produces an additional spatially dependent torque of the form ∼∇2[m×(u⋅∇)m]+ξ∇2[(u⋅∇)m], where m is the local magnetization direction, u is the direction of injected current, and ξ is a parameter characterizing the spin dynamics (precession, dephasing, and spin-flip). This torque, which scales as the inverse square of the domain wall width, only weakly enhances the longitudinal velocity of a transverse domain wall but significantly enhances the transverse velocity of vortex walls. The spatial-dependent spin transfer torque uncovered in this study is expected to have significant impact on the current-driven motion of abrupt two-dimensional textures such as vortices, skyrmions, and merons.

Dynamic selective switching in antiferromagnetically-coupled bilayers close to the spin reorientation transition

International Nuclear Information System (INIS)

Fernández-Pacheco, A.; Mansell, R.; Petit, D.; Lee, J. H.; Cowburn, R. P.; Ummelen, F. C.; Swagten, H. J. M.

2014-01-01

We have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.

EMG-Torque Dynamics Change With Contraction Bandwidth.

Science.gov (United States)

Golkar, Mahsa A; Jalaleddini, Kian; Kearney, Robert E

2018-04-01

An accurate model for ElectroMyoGram (EMG)-torque dynamics has many uses. One of its applications which has gained high attention among researchers is its use, in estimating the muscle contraction level for the efficient control of prosthesis. In this paper, the dynamic relationship between the surface EMG and torque during isometric contractions at the human ankle was studied using system identification techniques. Subjects voluntarily modulated their ankle torque in dorsiflexion direction, by activating their tibialis anterior muscle, while tracking a pseudo-random binary sequence in a torque matching task. The effects of contraction bandwidth, described by torque spectrum, on EMG-torque dynamics were evaluated by varying the visual command switching time. Nonparametric impulse response functions (IRF) were estimated between the processed surface EMG and torque. It was demonstrated that: 1) at low contraction bandwidths, the identified IRFs had unphysiological anticipatory (i.e., non-causal) components, whose amplitude decreased as the contraction bandwidth increased. We hypothesized that this non-causal behavior arose, because the EMG input contained a component due to feedback from the output torque, i.e., it was recorded from within a closed-loop. Vision was not the feedback source since the non-causal behavior persisted when visual feedback was removed. Repeating the identification using a nonparametric closed-loop identification algorithm yielded causal IRFs at all bandwidths, supporting this hypothesis. 2) EMG-torque dynamics became faster and the bandwidth of system increased as contraction modulation rate increased. Thus, accurate prediction of torque from EMG signals must take into account the contraction bandwidth sensitivity of this system.

Quantifying the effects of disorder on switching of perpendicular spin ice arrays

Science.gov (United States)

Kempinger, Susan; Fraleigh, Robert; Lammert, Paul; Crespi, Vincent; Samarth, Nitin; Zhang, Sheng; Schiffer, Peter

There is much contemporary interest in probing custom designed, frustrated systems such as artificial spin ice. To that end, we study arrays of lithographically patterned, single-domain Pt/Co multilayer islands. Due to the perpendicular anisotropy of these materials, we are able to use diffraction-limited magneto-optical Kerr effect microscopy to access the magnetic state in situ with an applied field. As we tune the interaction strength by adjusting the lattice spacing, we observe the switching field distribution broadening with increasing dipolar interactions. Using a simple mathematical analysis we extract the intrinsic disorder (the disorder that would be present without interactions) from these switching field distributions. We also characterize the intrinsic disorder by systematically removing neighbor effects from the switching field distribution. Understanding this disorder contribution as well as the interaction strength allows us to more accurately characterize the moment correlation. This project was funded by the US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Grant No. DE- SC0010778

Tunable spin-charge conversion through topological phase transitions in zigzag nanoribbons

KAUST Repository

Li, Hang

2016-06-29

We study spin-orbit torques and charge pumping in magnetic quasi-one-dimensional zigzag nanoribbons with a hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences a topological phase transition from a trivial band insulator to a quantum spin Hall insulator by tuning of either the magnetization direction or the intrinsic spin-orbit coupling. We find that the spin-charge conversion efficiency (i.e., spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.

Tunable spin-charge conversion through topological phase transitions in zigzag nanoribbons

KAUST Repository

Li, Hang; Manchon, Aurelien

2016-01-01

We study spin-orbit torques and charge pumping in magnetic quasi-one-dimensional zigzag nanoribbons with a hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences a topological phase transition from a trivial band insulator to a quantum spin Hall insulator by tuning of either the magnetization direction or the intrinsic spin-orbit coupling. We find that the spin-charge conversion efficiency (i.e., spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.

Gate-Driven Pure Spin Current in Graphene

Science.gov (United States)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.