Resonant Tunneling Spin Pump

Science.gov (United States)

Ting, David Z.

2007-01-01

The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

Science.gov (United States)

Bode, Matthias

2012-01-01

The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures.

Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

2004-01-01

A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

The impact of structural relaxation on spin polarization and magnetization reversal of individual nano structures studied by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen

2014-10-01

The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.

Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.

Science.gov (United States)

Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P

2016-10-26

The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.

Laser-assisted spin-polarized transport in graphene tunnel junctions

International Nuclear Information System (INIS)

Ding Kaihe; Zhu Zhengang; Berakdar, Jamal

2012-01-01

The Keldysh nonequilibrium Green’s function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. (paper)

Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

NARCIS (Netherlands)

Vera Marun, I.J.

2010-01-01

This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

Spin-polarized scanning-tunneling probe for helical Luttinger liquids.

Science.gov (United States)

Das, Sourin; Rao, Sumathi

2011-06-10

We propose a three-terminal spin-polarized STM setup for probing the helical nature of the Luttinger liquid edge state that appears in the quantum spin Hall system. We show that the three-terminal tunneling conductance depends on the angle (θ) between the magnetization direction of the tip and the local orientation of the electron spin on the edge while the two terminal conductance is independent of this angle. We demonstrate that chiral injection of an electron into the helical Luttinger liquid (when θ is zero or π) is associated with fractionalization of the spin of the injected electron in addition to the fractionalization of its charge. We also point out a spin current amplification effect induced by the spin fractionalization.

Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

NARCIS (Netherlands)

Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

2007-01-01

The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

NARCIS (Netherlands)

Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

2007-01-01

The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

International Nuclear Information System (INIS)

Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

2017-01-01

Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

In situ scanning tunneling microscope tip treatment device for spin polarization imaging

Science.gov (United States)

Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

2008-04-22

A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

2014-10-01

The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

Tunnel magnetoresistance in double spin filter junctions

International Nuclear Information System (INIS)

Saffarzadeh, Alireza

2003-01-01

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

Semiclassical theory of the tunneling anomaly in partially spin-polarized compressible quantum Hall states

Science.gov (United States)

Chowdhury, Debanjan; Skinner, Brian; Lee, Patrick A.

2018-05-01

Electron tunneling into a system with strong interactions is known to exhibit an anomaly, in which the tunneling conductance vanishes continuously at low energy due to many-body interactions. Recent measurements have probed this anomaly in a quantum Hall bilayer of the half-filled Landau level, and shown that the anomaly apparently gets stronger as the half-filled Landau level is increasingly spin polarized. Motivated by this result, we construct a semiclassical hydrodynamic theory of the tunneling anomaly in terms of the charge-spreading action associated with tunneling between two copies of the Halperin-Lee-Read state with partial spin polarization. This theory is complementary to our recent work (D. Chowdhury, B. Skinner, and P. A. Lee, arXiv:1709.06091) where the electron spectral function was computed directly using an instanton-based approach. Our results show that the experimental observation cannot be understood within conventional theories of the tunneling anomaly, in which the spreading of the injected charge is driven by the mean-field Coulomb energy. However, we identify a qualitatively new regime, in which the mean-field Coulomb energy is effectively quenched and the tunneling anomaly is dominated by the finite compressibility of the composite Fermion liquid.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Sander, Dirk, E-mail: sander@mpi-halle.de [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany); Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany)

2013-08-15

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Sander, Dirk; Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen

2013-01-01

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center

Spin-Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene

Science.gov (United States)

2017-11-09

Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene Report Term: 0-Other Email ...Principal: Y Name: Jay A Gupta Email : gupta.208@osu.edu Name: Roland K Kawakami Email : kawakami.15@osu.edu RPPR Final Report as of 13-Nov-2017...studies on films and devices. Optimization of the Cr tip will be the next important step to establish this technique. We are writing up these early

Optimization of the polarized Klein tunneling currents in a sub-lattice: pseudo-spin filters and latticetronics in graphene ribbons.

Science.gov (United States)

López, Luis I A; Yaro, Simeón Moisés; Champi, A; Ujevic, Sebastian; Mendoza, Michel

2014-02-12

We found that with an increase of the potential barrier applied to metallic graphene ribbons, the Klein tunneling current decreases until it is totally destroyed and the pseudo-spin polarization increases until it reaches its maximum value when the current is zero. This inverse relation disfavors the generation of polarized currents in a sub-lattice. In this work we discuss the pseudo-spin control (polarization and inversion) of the Klein tunneling currents, as well as the optimization of these polarized currents in a sub-lattice, using potential barriers in metallic graphene ribbons. Using density of states maps, conductance results, and pseudo-spin polarization information (all of them as a function of the energy V and width of the barrier L), we found (V, L) intervals in which the polarized currents in a given sub-lattice are maximized. We also built parallel and series configurations with these barriers in order to further optimize the polarized currents. A systematic study of these maps and barrier configurations shows that the parallel configurations are good candidates for optimization of the polarized tunneling currents through the sub-lattice. Furthermore, we discuss the possibility of using an electrostatic potential as (i) a pseudo-spin filter or (ii) a pseudo-spin inversion manipulator, i.e. a possible latticetronic of electronic currents through metallic graphene ribbons. The results of this work can be extended to graphene nanostructures.

Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling.

Science.gov (United States)

Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; de la Fuente, César; Arnaudas, José Ignacio

2015-09-03

High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths.

Spin-polarized current generated by magneto-electrical gating

International Nuclear Information System (INIS)

Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

2012-01-01

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

Transmittance and Tunneling Current through a Trapezoidal Barrier under Spin Polarization Consideration

Science.gov (United States)

Noor, F. A.; Nabila, E.; Mardianti, H.; Ariani, T. I.; Khairurrijal

2018-04-01

The transmittance and tunneling current in heterostructures under spin polarization consideration were studied by employing a zinc-blended structure for the heterostructures. An electron tunnels through a potential barrier by applying a bias voltage to the barrier, which is called the trapezoidal potential barrier. In order to study the transmittance, an Airy wave function approach was employed to find the transmittance. The obtained transmittance was then utilized to compute the tunneling current by using a Gauss quadrature method. It was shown that the transmittances were asymmetric with the incident angle of the electron. It was also shown that the tunneling currents increased as the bias voltage increased.

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Theory of electrically controlled resonant tunneling spin devices

Science.gov (United States)

Ting, David Z. -Y.; Cartoixa, Xavier

2004-01-01

We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

The critical role of the barrier thickness in spin filter tunneling

International Nuclear Information System (INIS)

Miller, Casey W.

2009-01-01

Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

Spin-dependent tunneling transport in a lateral magnetic diode

International Nuclear Information System (INIS)

Wang, Yu; Shi, Ying

2012-01-01

Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

OpenAIRE

Saffarzadeh, Alireza; Daqiq, Reza

2009-01-01

We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

Spin inelastic electron tunneling spectroscopy on local spin adsorbed on surface.

Science.gov (United States)

Fransson, J

2009-06-01

The recent experimental conductance measurements taken on magnetic impurities on metallic surfaces, using scanning tunneling microscopy technique and suggesting occurrence of inelastic scattering processes, are theoretically addressed. We argue that the observed conductance signatures are caused by transitions between the spin states that have opened due to, for example, exchange coupling between the local spins and the tunneling electrons, and are directly interpretable in terms of inelastic transitions energies. Feasible measurements using spin-polarized scanning tunneling microscopy that would enable new information about the excitation spectrum of the local spins are discussed.

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

Science.gov (United States)

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-05-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque, are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport vectors is demonstrated that enables the estimation of tunneling spin transport properties based on experimentally measured SP-STM images. A considerable tunability of the spin transport vectors by the involved spin polarizations is also highlighted. These possibilities and the combined theory of tunneling charge and vector spin transport pave the way for gaining deep insight into electric-current-induced tunneling spin transport properties in SP-STM and to the related dynamics of complex magnetic textures at surfaces.

Spin dynamics in tunneling decay of a metastable state

OpenAIRE

Ban, Yue; Sherman, E. Ya.

2012-01-01

We analyze spin dynamics in the tunneling decay of a metastable localized state in the presence of spin-orbit coupling. We find that the spin polarization at short time scales is affected by the initial state while at long time scales both the probability- and the spin density exhibit diffraction-in-time phenomenon. We find that in addition to the tunneling time the tunneling in general can be characterized by a new parameter, the tunneling length. Although the tunneling length is independent...

Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

Science.gov (United States)

Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

1998-01-01

Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

New materials research for high spin polarized current

International Nuclear Information System (INIS)

Tezuka, Nobuki

2012-01-01

The author reports here a thorough investigation of structural and magnetic properties of Co 2 FeAl 0.5 Si 0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co 2 FeAl 0.5 Si 0.5 electrodes, spin injection into GaAs semiconductor from Co 2 FeAl 0.5 Si 0.5 , and spin filtering phenomena for junctions with CoFe 2 O 4 ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co 2 FeAl 0.5 Si 0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co 2 FeAl 0.5 Si 0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co 2 FeAl 0.5 Si 0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co 2 FeAl 0.5 Si 0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.

Spin-polarized currents in the tunnel contact of a normal conductor and a two-dimensional topological insulator

International Nuclear Information System (INIS)

Sukhanov, A. A.; Sablikov, V. A.

2013-01-01

The spin filtering of electrons tunneling from the edge states of a two-dimensional topological insulator into a normal conductor under a magnetic field (external or induced due to proximity to a magnetic insulator) is studied. Calculations are performed for a tunnel contact of finite length between the topological insulator and an electronic multimode quantum strip. It is shown that the flow of tunneling electrons is split in the strip, so that spin-polarized currents arise in its left and right branches. These currents can be effectively controlled by the contact voltage and the chemical potential of the system. The presence of a magnetic field, which splits the spin subbands of the electron spectrum in the strip, gives rise to switching of the spin current between the strip branches

Spin-polarized scanning tunneling spectroscopy of self-organized nanoscale Co islands on Au(111) surfaces.

Science.gov (United States)

Schouteden, K; Muzychenko, D A; Van Haesendonck, C

2008-07-01

Magnetic monolayer and bilayer Co islands of only a few nanometer in size were grown by atomic deposition on atomically flat Au(111) films. The islands were studied in situ by scanning tunneling microscopy (STM) and spectroscopy at low temperatures. Spin-resolved tunneling spectroscopy, using an STM tip with a magnetic coating, revealed that the Co islands exhibit a net magnetization perpendicular to the substrate surface due to the presence of spin-polarized d-states. A random distribution of islands with either upward or downward pointing magnetization was observed, without any specific correlation of magnetization orientation with island size or island height.

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

International Nuclear Information System (INIS)

Tang, N.Y.

2009-01-01

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.

Experimental verification of the rotational type of chiral spin spiral structures by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Haze, Masahiro; Yoshida, Yasuo; Hasegawa, Yukio

2017-10-16

We report on experimental verification of the rotational type of chiral spin spirals in Mn thin films on a W(110) substrate using spin-polarized scanning tunneling microscopy (SP-STM) with a double-axis superconducting vector magnet. From SP-STM images using Fe-coated W tips magnetized to the out-of-plane and [001] directions, we found that both Mn mono- and double-layers exhibit cycloidal rotation whose spins rotate in the planes normal to the propagating directions. Our results agree with the theoretical prediction based on the symmetry of the system, supporting that the magnetic structures are driven by the interfacial Dzyaloshinskii-Moriya interaction.

Spin current and electrical polarization in GaN double-barrier structures

OpenAIRE

Litvinov, V. I.

2007-01-01

Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

Science.gov (United States)

Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

2001-01-01

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes.

Science.gov (United States)

Phark, Soo-Hyon; Sander, Dirk

2017-01-01

Spin-polarized scanning tunneling microscopy and spectroscopy (spin-STM/S) have been successfully applied to magnetic characterizations of individual nanostructures. Spin-STM/S is often performed in magnetic fields of up to some Tesla, which may strongly influence the tip state. In spite of the pivotal role of the tip in spin-STM/S, the contribution of the tip to the differential conductance d I /d V signal in an external field has rarely been investigated in detail. In this review, an advanced analysis of spin-STM/S data measured on magnetic nanoislands, which relies on a quantitative magnetic characterization of tips, is discussed. Taking advantage of the uniaxial out-of-plane magnetic anisotropy of Co bilayer nanoisland on Cu(111), in-field spin-STM on this system has enabled a quantitative determination, and thereby, a categorization of the magnetic states of the tips. The resulting in-depth and conclusive analysis of magnetic characterization of the tip opens new venues for a clear-cut sub-nanometer scale spin ordering and spin-dependent electronic structure of the non-collinear magnetic state in bilayer high Fe nanoislands on Cu(111).

Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

NARCIS (Netherlands)

Vera Marun, I.J.; Jansen, R.

2009-01-01

We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

OpenAIRE

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-01-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

Modeling all-electrical detection of the inverse Edelstein effect by spin-polarized tunneling in a topological-insulator/ferromagnetic-metal heterostructure

Science.gov (United States)

Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

2018-04-01

The spin-momentum locking of the surface states in a three-dimensional topological insulator (TI) allows a charge current on the surface of the TI induced by an applied spin current onto the surface, which is known as the inverse Edelstein effect (IEE), that could be achieved either by injecting pure spin current by spin-pumping from a ferromagnetic metal (FM) layer or by injecting spin-polarized charge current by direct tunneling of electrons from the FM to the TI. Here, we present a theory of the observed IEE effect in a TI-FM heterostructure for the spin-polarized tunneling experiments. If an electrical current is passed from the FM to the surface of the TI, because of density-of-states polarization of the FM, an effective imbalance of spin-polarized electrons occurs on the surface of the TI. Due to the spin-momentum helical locking of the surface states in the TI, a difference of transverse charge accumulation appears on the TI surface in a direction orthogonal to the direction of the magnetization of the FM, which is measured as a voltage difference. Here, we derive the two-dimensional transport equations of electrons on the surface of a diffusive TI, coupled to a FM, starting from the quantum kinetic equation, and analytically solve the equations for a rectangular geometry to calculate the voltage difference.

Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Xiaole [Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Chen, Xianfeng [The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L., E-mail: clgao@sjtu.edu.cn; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China); Luo, Weidong, E-mail: wdluo@sjtu.edu.cn [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)

2016-02-08

Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations.

Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Zhang, K. F.; Yang, Fang; Song, Y. R.; Zhang, Xiaole; Chen, Xianfeng; Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng; Luo, Weidong

2016-01-01

Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

Science.gov (United States)

Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

2016-12-01

We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga

Indian Academy of Sciences (India)

The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga 1 − y ...

Spin heat accumulation induced by tunneling from a ferromagnet.

Science.gov (United States)

Vera-Marun, I J; van Wees, B J; Jansen, R

2014-02-07

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

Spin-dependent tunnelling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

2003-01-01

The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

Anomalous tunneling of collective excitations and effects of superflow in the polar phase of a spin-1 spinor Bose-Einstein condensate

International Nuclear Information System (INIS)

Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

2011-01-01

We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.

Circular polarization in a non-magnetic resonant tunneling device

Directory of Open Access Journals (Sweden)

Airey Robert

2011-01-01

Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

Partially spin-polarized Josephson tunneling between non-centrosymmetric superconductors like CePt3Si

International Nuclear Information System (INIS)

Mandal, S.S.; Mukherjee, S.P.

2007-01-01

Full text: The recent discovery of the superconductivity in the heavy fermionic compound CePt 3 Si have attracted much of the attention of the physics community. The presence of strong Rashba kind of spin-orbit coupling in them split the otherwise degenerate electronic band into two nondegenerate bands. This peculiarity in the band structure gives rise to complicated kind of order parameter whose exact nature is unknown till date. Traditionally Josephson junctions in superconductors draw interest both scientifically and its applicability in making devices. It has been used in several cases as a probe to the order parameter symmetry of the superconductor. It has also been studied in unconventional superconductors like spin-singlet cuprate and spin-triplet Sr 2 RuO 4 superconductors. However no Josephson junction between nonmagnetic superconductors is known to generate spin-polarized current. The purpose of this work is to theoretically show that the direction dependent tunneling matrix element across the junction between two recently discovered non-centrosymmetric superconductors like CePt 3 Si, leads to tunneling of both spin-singlet and spin-triplet Cooper pairs. As a consequence, nonvanishing spin-Josephson current is viable along with the usual charge-Josephson current. This novel spin-Josephson current depends on the relative angle xi between the axes of non-centrosymmetry {n} L and that {n} R in the left and right side of the junction respectively. This angular dependence may be used to make Josephson spin switch. (authors)

Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

Directory of Open Access Journals (Sweden)

Ahmed Kenawy

2017-05-01

Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

Magnetic reconstruction induced magnetoelectric coupling and spin-dependent tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions

International Nuclear Information System (INIS)

Zhang, Hu; Dai, Jian-Qing; Song, Yu-Min

2016-01-01

We investigate the magnetoelectric coupling and spin-polarized tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions with asymmetric interfaces based on density functional theory. The junctions have two stable polarization states. We predict a peculiar magnetoelectric effect in such junctions originating from the magnetic reconstruction of Ni near the KO-terminated interface. This reconstruction is induced by the reversal of the ferroelectric polarization of KNbO_3. Furthermore, the change in the magnetic ordering filters the spin-dependent current. This effect leads to a change in conductance by about two orders of magnitude. As a result we obtain a giant tunneling electroresistance effect. In addition, there exist sizable tunneling magnetoresistance effects for two polarization states. - Highlights: • We study the ME coupling and electron tunneling in Ni/KNbO_3/Ni junctions. • There is magnetic reconstruction of Ni atoms near the KO-terminated interface. • A peculiar magnetoelectric coupling effect is obtained. • Predicted giant tunneling electroresistance effects.

Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Srisongmuang, B.; Ka-oey, A.

2012-01-01

We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band. - Highlights: → DSOC energy can be directly measured from tunneling conductance spectrum. → Spin polarization of conductance in the propagation direction can be obtained by injecting from DSOC system. → Both types of scattering can increase spin polarization.

Spin-dependent tunneling recombination in heterostructures with a magnetic layer

Energy Technology Data Exchange (ETDEWEB)

Denisov, K. S., E-mail: denisokonstantin@gmail.com; Rozhansky, I. V.; Averkiev, N. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lähderanta, E. [Lappeenranta University of Technology (Finland)

2017-01-15

We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

Science.gov (United States)

Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

2017-12-01

We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

Investigation of non-collinear spin states with scanning tunneling microscopy.

Science.gov (United States)

Wulfhekel, W; Gao, C L

2010-03-05

Most ferromagnetic and antiferromagnetic substances show a simple collinear arrangement of the local spins. Under certain circumstances, however, the spin configuration is non-collinear. Scanning tunneling microscopy with its potential atomic resolution is an ideal tool for investigating these complex spin structures. Non-collinearity can be due to topological frustration of the exchange interaction, due to relativistic spin-orbit coupling or can be found in excited states. Examples for all three cases are given, illustrating the capabilities of spin-polarized scanning tunneling microscopy.

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

Science.gov (United States)

Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

2006-10-01

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

Spin injection in n-type resonant tunneling diodes.

Science.gov (United States)

Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

2012-10-25

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Observation of spin Hall effect in photon tunneling via weak measurements.

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-12-09

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-01-01

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Theory of spin-dependent tunnelling in magnetic junctions

International Nuclear Information System (INIS)

Mathon, J.

2002-01-01

Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)

Rashba and Dresselhaus spin-orbit coupling effects on tunnelling through two-dimensional magnetic quantum systems

International Nuclear Information System (INIS)

Xu Wen; Guo Yong

2005-01-01

We investigate the influence of the Rashba and Dresselhaus spin-orbit coupling interactions on tunnelling through two-dimensional magnetic quantum systems. It is showed that not only Rashba spin-orbit coupling but also Dresselhaus one can affect spin tunnelling properties greatly in such a quantum system. The transmission possibility, the spin polarization and the conductance are obviously oscillated with both coupling strengths. High spin polarization, conductance and magnetic conductance of the structure can be obtained by modulating either Rashba or Dresselhaus coupling strength

The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

Science.gov (United States)

Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xuezhong; Xu, Zhongjie; Yuan, Xuefeng

2018-05-01

Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

Science.gov (United States)

Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

2010-12-01

A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

Voltage-controlled spin selection in a magnetic resonant tunneling diode.

Science.gov (United States)

Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

2003-06-20

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking.

Science.gov (United States)

Habib, K M Masum; Sajjad, Redwan N; Ghosh, Avik W

2015-05-01

We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D topological insulator (TI). Our calculations show that the chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate-tunable spin-to-charge current ratio (∼20) at the reflected end. At the transmitted end, the ratio stays close to 1 and the electrons are completely spin polarized.

Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

KAUST Repository

Zhang, Qian; Mi, Wenbo; Wang, Xiaocha; Wang, Xuhui

2015-01-01

We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

KAUST Repository

Zhang, Qian

2015-05-27

We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

Science.gov (United States)

Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

2010-07-23

We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

Spin filtering through ferromagnetic BiMn O3 tunnel barriers

Science.gov (United States)

Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

2005-07-01

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Dynamical nuclear spin polarization induced by electronic current through double quantum dots

International Nuclear Information System (INIS)

Lopez-Monis, Carlos; Platero, Gloria; Inarrea, Jesus

2011-01-01

We analyse electron-spin relaxation in electronic transport through coherently coupled double quantum dots (DQDs) in the spin blockade regime. In particular, we focus on hyperfine (HF) interaction as the spin-relaxation mechanism. We pay special attention to the effect of the dynamical nuclear spin polarization induced by the electronic current on the nuclear environment. We discuss the behaviour of the electronic current and the induced nuclear spin polarization versus an external magnetic field for different HF coupling intensities and interdot tunnelling strengths. We take into account, for each magnetic field, all HF-mediated spin-relaxation processes coming from different opposite spin level approaches. We find that the current as a function of the external magnetic field shows a peak or a dip and that the transition from a current dip to a current peak behaviour is obtained by decreasing the HF coupling or by increasing the interdot tunnelling strength. We give a physical picture in terms of the interplay between the electrons tunnelling out of the DQD and the spin-flip processes due to the nuclear environment.

Spin Tunneling in Junctions with Disordered Ferromagnets

NARCIS (Netherlands)

Paluskar, P.V.; Attema, J.J.; de Wijs, G.A.; Fiddy, S.; Snoeck, E.; Kohlhepp, J.T.; Swagten, H.J.M.; de Groot, R. A.; Koopmans, H.

2008-01-01

We provide compelling evidence to establish that, contrary to one’s elementary guess, the tunneling spin polarization (TSP) of amorphous CoFeB is larger than that of fcc CoFeB. First-principles atomic and electronic structure calculations reveal striking agreement between the measured TSP and the

Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling.

Science.gov (United States)

Kalitsov, Alan; Coho, A; Kioussis, Nicholas; Vedyayev, Anatoly; Chshiev, M; Granovsky, A

2004-07-23

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS. Copyright 2004 The American Physical Society

Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches

Science.gov (United States)

Nabila, Ezra; Noor, Fatimah A.; Khairurrijal

2017-07-01

In this study, we report an analytical calculation of electron transmittance and polarized tunneling current in a single barrier heterostructure of a metal-GaSb-metal by considering the Dresselhaus spin orbit effect. Exponential function, WKB method and Airy function were used in calculating the electron transmittance and tunneling current. A Transfer Matrix Method, as a numerical method, was utilized as the benchmark to evaluate the analytical calculation. It was found that the transmittances calculated under exponential function and Airy function is the same as that calculated under TMM method at low electron energy. However, at high electron energy only the transmittance calculated under Airy function approach is the same as that calculated under TMM method. It was also shown that the transmittances both of spin-up and spin-down conditions increase as the electron energy increases for low energies. Furthermore, the tunneling current decreases with increasing the barrier width.

When measured spin polarization is not spin polarization

International Nuclear Information System (INIS)

Dowben, P A; Wu Ning; Binek, Christian

2011-01-01

Spin polarization is an unusually ambiguous scientific idiom and, as such, is rarely well defined. A given experimental methodology may allow one to quantify a spin polarization but only in its particular context. As one might expect, these ambiguities sometimes give rise to inappropriate interpretations when comparing the spin polarizations determined through different methods. The spin polarization of CrO 2 and Cr 2 O 3 illustrate some of the complications which hinders comparisons of spin polarization values. (viewpoint)

Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

International Nuclear Information System (INIS)

Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

2012-01-01

Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Science.gov (United States)

Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

2014-01-01

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

Injection of spin-polarized current into semiconductor

International Nuclear Information System (INIS)

Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

2003-01-01

A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

Transient charging and discharging of spin-polarized electrons in a quantum dot

DEFF Research Database (Denmark)

De Souza, Fabricio; Leao, S.A.; Gester, R. M.

2007-01-01

We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green ...

Spin current in an electron waveguide tunnel-coupled to a topological insulator

International Nuclear Information System (INIS)

Sukhanov, Aleksei A; Sablikov, Vladimir A

2012-01-01

We show that electron tunneling from edge states in a two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization P can be very close to unity and the electron current passing through the tunnel contact splits in the waveguide into two branches flowing from the contact. The polarization essentially depends on the electron scattering by the contact and the electron-electron interaction in the one-dimensional edge states. The electron-electron interaction is treated within the Luttinger liquid model. The main effect of the interaction stems from the renormalization of the electron velocity, due to which the polarization increases with the interaction strength. Electron scattering by the contact leads to a decrease in P. A specific effect occurs when the bottom of the subbands in the waveguide crosses the Dirac point of the spectrum of edge states when changing the voltage or chemical potential. This leads to changing the direction of the spin current.

The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

International Nuclear Information System (INIS)

Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

2016-01-01

The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

Real-space observation of a right-rotating inhomogeneous cycloidal spin spiral by spin-polarized scanning tunneling microscopy in a triple axes vector magnet.

Science.gov (United States)

Meckler, S; Mikuszeit, N; Pressler, A; Vedmedenko, E Y; Pietzsch, O; Wiesendanger, R

2009-10-09

Using spin-polarized scanning tunneling microscopy performed in a triple axes vector magnet, we show that the magnetic structure of the Fe double layer on W(110) is an inhomogeneous right-rotating cycloidal spin spiral. The magnitude of the Dzyaloshinskii-Moriya vector is extracted from the experimental data using micromagnetic calculations. The result is confirmed by comparison of the measured saturation field along the easy axis to the respective value as obtained from Monte Carlo simulations. We find that the Dzyaloshinskii-Moriya interaction is too weak to destabilize the single domain state. However, it can define the sense of rotation and the cycloidal spiral type once the single domain state is destabilized by dipolar interaction.

Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

International Nuclear Information System (INIS)

Peter, A. John; Lee, Chang Woo

2012-01-01

Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa x Sb 1−x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration

Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

International Nuclear Information System (INIS)

Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

2009-01-01

Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

KAUST Repository

Manchon, Aurelien

2011-05-17

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

Spin transport in spin filtering magnetic tunneling junctions.

Science.gov (United States)

Li, Yun; Lee, Eok Kyun

2007-11-01

Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO.

Science.gov (United States)

Schleicher, F; Halisdemir, U; Lacour, D; Gallart, M; Boukari, S; Schmerber, G; Davesne, V; Panissod, P; Halley, D; Majjad, H; Henry, Y; Leconte, B; Boulard, A; Spor, D; Beyer, N; Kieber, C; Sternitzky, E; Cregut, O; Ziegler, M; Montaigne, F; Beaurepaire, E; Gilliot, P; Hehn, M; Bowen, M

2014-08-04

Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

Spin-polarized scanning tunneling microscopy and spectroscopy study of chromium on a Cr(001) surface.

Science.gov (United States)

Lagoute, J; Kawahara, S L; Chacon, C; Repain, V; Girard, Y; Rousset, S

2011-02-02

Several tens of chromium layers were deposited at 250 °C on a Cr(001) surface and investigated by spin-polarized scanning tunneling microscopy (SP-STM), Auger electron spectroscopy (AES) and scanning tunneling spectroscopy (STS). Chromium is found to grow with a mound-like morphology resulting from the stacking of several monolayers which do not uniformly cover the whole surface of the substrate. The terminal plane consists of an irregular array of Cr islands with lateral sizes smaller than 20 × 20 nm(2). Combined AES and STS measurements reveal the presence of a significant amount of segregants prior to and after deposition. A detailed investigation of the surface shows that it consists of two types of patches. Thanks to STS measurements, the two types of area have been identified as being either chromium pure or segregant rich. SP-STM experiments have evidenced that the antiferromagnetic layer coupling remains in the chromium mounds after deposition and is not significantly affected by the presence of the segregants.

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.

2015-09-21

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

Tuning spin-polarized transport in organic semiconductors

Science.gov (United States)

Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

Directory of Open Access Journals (Sweden)

Bin Fang

2016-12-01

Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Velocity barrier-controlled of spin-valley polarized transport in monolayer WSe2 junction

Science.gov (United States)

Qiu, Xuejun; Lv, Qiang; Cao, Zhenzhou

2018-05-01

In this work, we have theoretically investigated the influence of velocity barrier on the spin-valley polarized transport in monolayer (ML) WSe2 junction with a large spin-orbit coupling (SOC). Both the spin-valley resolved transmission probabilities and conductance are strong dependent on the velocity barrier, as the velocity barrier decreases to 0.06, a spin-valley polarization of exceeding 90% is observed, which is distinct from the ML MoS2 owing to incommensurable SOC. In addition, the spin-valley polarization is further increased above 95% in a ML WSe2 superlattice, in particular, it's found many extraordinary velocity barrier-dependent transport gaps for multiple barrier due to evanescent tunneling. Our results may open an avenue for the velocity barrier-controlled high-efficiency spin and valley polarizations in ML WSe2-based electronic devices.

Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

Directory of Open Access Journals (Sweden)

H. Matsuyama

2016-03-01

Full Text Available We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

Energy Technology Data Exchange (ETDEWEB)

Matsuyama, H., E-mail: matsu@phys.sci.hokudai.ac.jp [Department of Physics, Faculty of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Nara, D.; Kageyama, R.; Honda, K.; Sato, T.; Kusanagi, K. [Department of Condensed Matter Physics, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Srinivasan, E. [Creative Research Institution (CRIS), Hokkaido University, Sapporo, Hokkaido 001-0021 (Japan); Koike, K. [Department of Physics, Faculty of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Creative Research Institution (CRIS), Hokkaido University, Sapporo, Hokkaido 001-0021 (Japan)

2016-03-15

We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM) in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

Science.gov (United States)

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

Science.gov (United States)

Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

2011-03-28

Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:

Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

Directory of Open Access Journals (Sweden)

Ma Jing-Min

2011-01-01

Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:

Dark states in spin-polarized transport through triple quantum dot molecules

Science.gov (United States)

Wrześniewski, K.; Weymann, I.

2018-02-01

We study the spin-polarized transport through a triple-quantum-dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique, including up to the second order of perturbation expansion with respect to the tunnel coupling. The emphasis is put on the impact of dark states on spin-resolved transport characteristics. It is shown that the interplay of coherent population trapping and cotunneling processes results in a highly nontrivial behavior of the tunnel magnetoresistance, which can take negative values. Moreover, a super-Poissonian shot noise is found in transport regimes where the current is blocked by the formation of dark states, which can be additionally enhanced by spin dependence of tunneling processes, depending on the magnetic configuration of the device. The mechanisms leading to those effects are thoroughly discussed.

Spin tunneling and manipulation in nanostructures.

Science.gov (United States)

Sherman, E Ya; Ban, Yue; Gulyaev, L V; Khomitsky, D V

2012-09-01

The results for joint effects of tunneling and spin-orbit coupling on spin dynamics in nanostructures are presented for systems with discrete and continuous spectra. We demonstrate that tunneling plays the crucial role in the spin dynamics and the abilities of spin manipulation by external electric field. This result can be important for design of nanostructures-based spintronics devices.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Spin- and valley-polarized one-way Klein tunneling in photonic topological insulators.

Science.gov (United States)

Ni, Xiang; Purtseladze, David; Smirnova, Daria A; Slobozhanyuk, Alexey; Alù, Andrea; Khanikaev, Alexander B

2018-05-01

Recent advances in condensed matter physics have shown that the spin degree of freedom of electrons can be efficiently exploited in the emergent field of spintronics, offering unique opportunities for efficient data transfer, computing, and storage ( 1 - 3 ). These concepts have been inspiring analogous approaches in photonics, where the manipulation of an artificially engineered pseudospin degree of freedom can be enabled by synthetic gauge fields acting on light ( 4 - 6 ). The ability to control these degrees of freedom significantly expands the landscape of available optical responses, which may revolutionize optical computing and the basic means of controlling light in photonic devices across the entire electromagnetic spectrum. We demonstrate a new class of photonic systems, described by effective Hamiltonians in which competing synthetic gauge fields, engineered in pseudospin, chirality/sublattice, and valley subspaces, result in bandgap opening at one of the valleys, whereas the other valley exhibits Dirac-like conical dispersion. We show that this effective response has marked implications on photon transport, among which are as follows: (i) a robust pseudospin- and valley-polarized one-way Klein tunneling and (ii) topological edge states that coexist within the Dirac continuum for opposite valley and pseudospin polarizations. These phenomena offer new ways to control light in photonics, in particular, for on-chip optical isolation, filtering, and wave-division multiplexing by selective action on their pseudospin and valley degrees of freedom.

Detection of current-induced spin polarization in BiSbTeSe{sub 2} toplogical insulator

Energy Technology Data Exchange (ETDEWEB)

Yang, Fan; Ghatak, Subhamoy; Taskin, Alexey; Ando, Yoichi [Institute of Physics II, University of Cologne (Germany); Ando, Yuichiro [Department of Electronic Science and Engineering, Kyoto University (Japan)

2016-07-01

Topological insulators (TIs) are a class of quantum matter which possess spin-momentum-locked Dirac Fermions on the surfaces. Due to the spin-momentum locking, spin polarization will be induced when a charge current flows through the surface of a TI. Such spin polarization can be detected by using a ferromagnetic tunneling contact as a detector. In this talk, we present our results measured in devices fabricated from BiSbTeSe{sub 2} flakes. Spin signals were observed in both n-type and p-type BiSbTeSe{sub 2} samples.

A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

Science.gov (United States)

Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

2011-05-01

A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.

2011-08-24

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

2011-01-01

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Spin-filtering junctions with double ferroelectric barriers

International Nuclear Information System (INIS)

Yan, Ju; Ding-Yu, Xing

2009-01-01

An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

Spin-flip tunneling in quantum dots

Energy Technology Data Exchange (ETDEWEB)

Schreiber, Lars; Braakman, Floris; Meunier, Tristan; Calado, Victor; Vandersypen, Lieven [Kavli Institute of NanoScience, Delft (Netherlands); Wegscheider, Werner [Institute for Experimental and Applied Physics, University of Regensburg (Germany)

2010-07-01

Electron spins in a gate-defined double quantum dot formed in a GaAs/(Al,Ga)As 2DEG are promising candidates for quantum information processing as coherent single spin rotation and spin swap has been demonstrated recently. In this system we investigate the two-electron spin dynamics in the presence of microwaves (5.20 GHz) applied to one side gate. During microwave excitation we observe characteristic photon assisted tunneling (PAT) peaks at the (1,1) to (0,2) charge transition. Some of the PAT peaks are attributed to photon tunneling events between the singlet S(0,2) and the singlet S(1,1) states, a spin-conserving transition. Surprisingly, other PAT peaks stand out by their different external magnetic field dependence. They correspond to tunneling involving a spin-flip, from the (0,2) singlet to a (1,1) triplet. The full spectrum of the observed PAT lines is captured by simulations. This process offers novel possibilities for 2-electron spin manipulation and read-out.

Spin- and valley-polarized one-way Klein tunneling in photonic topological insulators

Science.gov (United States)

Slobozhanyuk, Alexey

2018-01-01

Recent advances in condensed matter physics have shown that the spin degree of freedom of electrons can be efficiently exploited in the emergent field of spintronics, offering unique opportunities for efficient data transfer, computing, and storage (1–3). These concepts have been inspiring analogous approaches in photonics, where the manipulation of an artificially engineered pseudospin degree of freedom can be enabled by synthetic gauge fields acting on light (4–6). The ability to control these degrees of freedom significantly expands the landscape of available optical responses, which may revolutionize optical computing and the basic means of controlling light in photonic devices across the entire electromagnetic spectrum. We demonstrate a new class of photonic systems, described by effective Hamiltonians in which competing synthetic gauge fields, engineered in pseudospin, chirality/sublattice, and valley subspaces, result in bandgap opening at one of the valleys, whereas the other valley exhibits Dirac-like conical dispersion. We show that this effective response has marked implications on photon transport, among which are as follows: (i) a robust pseudospin- and valley-polarized one-way Klein tunneling and (ii) topological edge states that coexist within the Dirac continuum for opposite valley and pseudospin polarizations. These phenomena offer new ways to control light in photonics, in particular, for on-chip optical isolation, filtering, and wave-division multiplexing by selective action on their pseudospin and valley degrees of freedom. PMID:29756032

Tunneling spin injection into single layer graphene.

Science.gov (United States)

Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

2010-10-15

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

SPIN-POLARIZED PHOTOCURRENT THROUGH QUANTUM DOT PHOTODETECTOR

Directory of Open Access Journals (Sweden)

Nguyen Van Hieu

2017-11-01

Full Text Available The theory of the photocurrent through the photodetector based on a two-level semiconductor quantum dot (QD is presented. The analytical expressions of the matrix elements of the electronic transitions generated by the absorption of the circularly polarized photons are derived in the lowest order of the perturbation theory with respect to the electron tunneling interaction as well as the electron-photon interaction. From these expressions the mechanism of the generation of the spin-polarized of electrons in the photocurrent is evident. It follows that the photodetector based on the two-level semiconductor QD can be used as the model of a source of highly spinpolarized electrons.

Dynamic nuclear spin polarization

Energy Technology Data Exchange (ETDEWEB)

Stuhrmann, H B [GKSS-Forschungszentrum Geesthacht GmbH (Germany)

1996-11-01

Polarized neutron scattering from dynamic polarized targets has been applied to various hydrogenous materials at different laboratories. In situ structures of macromolecular components have been determined by nuclear spin contrast variation with an unprecedented precision. The experiments of selective nuclear spin depolarisation not only opened a new dimension to structural studies but also revealed phenomena related to propagation of nuclear spin polarization and the interplay of nuclear polarisation with the electronic spin system. The observation of electron spin label dependent nuclear spin polarisation domains by NMR and polarized neutron scattering opens a way to generalize the method of nuclear spin contrast variation and most importantly it avoids precontrasting by specific deuteration. It also likely might tell us more about the mechanism of dynamic nuclear spin polarisation. (author) 4 figs., refs.

Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

Science.gov (United States)

Yin, Li; Wang, Xiaocha; Mi, Wenbo

2018-01-01

Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.

Enhanced spin Hall effect of tunneling light in hyperbolic metamaterial waveguide.

Science.gov (United States)

Tang, Tingting; Li, Chaoyang; Luo, Li

2016-08-01

Giant enhancement of spin Hall effect of tunneling light (SHETL) is theoretically proposed in a frustrated total internal reflection (FTIR) structure with hyperbolic metamaterial (HMM). We calculate the transverse shift of right-circularly polarized light in a SiO2-air-HMM-air-SiO2 waveguide and analyze the physical mechanism of the enhanced SHETL. The HMM anisotropy can greatly increase the transverse shift of polarized light even though HMM loss might reduce it. Compared with transverse shift of transmitted light through a single HMM slab with ZnAlO/ZnO multilayer, the maximum transverse shift of tunneling light through a FTIR structure with identical HMM can be significantly enlarged by more than three times which reaches -38 μm without any amplification method.

Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

International Nuclear Information System (INIS)

Dai, Jian-Qing

2016-01-01

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

2015-01-01

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

DEFF Research Database (Denmark)

Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

2003-01-01

Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

Electronic transport through EuO spin-filter tunnel junctions

KAUST Repository

Jutong, Nuttachai

2012-11-12

Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Dai, Jian-Qing, E-mail: djqkust@sina.com [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2016-08-21

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang

2005-01-01

Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift

Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling.

Science.gov (United States)

Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo

2015-07-01

We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

Polarization transfer from polarized nuclear spin to μ- spin in muonic atom

International Nuclear Information System (INIS)

Kuno, Yoshitaka; Nagamine, Kanetada; Yamazaki, Toshimitsu.

1987-02-01

A theoretical study of polarization transfer from an initially-polarized nuclear spin to a μ - spin in a muonic atom is given. The switching of the hyperfine interaction at excited muonic states as well as at the ground 1s state is taken into account. The upper state of hyperfine doublet at the muonic 1s state is considered to proceed down to the lower state. It is found that as the hyperfine interaction becomes effective at higher excited muonic orbitals, a less extent of polarization is transferred from the nuclear spin to the μ - spin. The theoretical values obtained are compared with the recent experiment of μ - repolarization in a polarized 209 Bi target. (author)

Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2011-10-01

Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

Bulk electron spin polarization generated by the spin Hall current

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that the spin Hall current generates a non-equilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known equilibrium polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

Bulk electron spin polarization generated by the spin Hall current

Science.gov (United States)

Korenev, V. L.

2006-07-01

It is shown that the spin Hall current generates a nonequilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known “equilibrium” polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

Spin interference of neutrons tunneling through magnetic thin films

International Nuclear Information System (INIS)

Hino, Masahiro; Achiwa, Norio; Tasaki, Seiji; Ebisawa, Toru; Akiyoshi, Tsunekazu; Kawai, Takeshi.

1996-01-01

Larmor precession of a neutron spin is represented as the superposition of the wave functions of the two Stern-Gerlach states ↑ and ↓. A transverse neutron spin echo (NSE) spectrometer can hence be used as a neutron spin interferometer (NSI) by setting a magnetic film, such as iron and permalloy45 (Fe 55 Ni 45 ), thin enough to permit tunneling at an incident angle above and below the critical angle of the total reflection in the Larmor precession field. The NSI can be used to study spin coherent superposition and rotation of the Larmor precession through a magnetic thin film for a tunneling ↑ spin neutron and a non-tunneling ↓ spin neutron and to get the tunneling time using Larmor clock. The NSI experiments were carried out to measure the shifts of NSE signals transmitted through magnetic iron films with thicknesses of 200 and 400 A and those magnetic permalloy45 films with thicknesses of 200 and 400 A, respectively, as a function of the incident angle. Then even in tunneling ↑ spin neutron and non-tunneling ↓ spin neutron, NSE signal was observed. The phase delay was measured in iron and permalloy45 films with thickness of 200 A, and the tunneling time using Larmor clock was estimated to be 4 ± 0.6 x 10 -9 sec. (author)

Magnetic field manipulation of spin current in a single-molecule magnet tunnel junction with two-electron Coulomb interaction

Science.gov (United States)

Zhang, Chao; Yao, Hui; Nie, Yi-Hang; Liang, Jiu-Qing; Niu, Peng-Bin

2018-04-01

In this work, we study the generation of spin-current in a single-molecule magnet (SMM) tunnel junction with Coulomb interaction of transport electrons and external magnetic field. In the absence of field the spin-up and -down currents are symmetric with respect to the initial polarizations of molecule. The existence of magnetic field breaks the time-reversal symmetry, which leads to unsymmetrical spin currents of parallel and antiparallel polarizations. Both the amplitude and polarization direction of spin current can be controlled by the applied magnetic field. Particularly when the magnetic field increases to a certain value the spin-current with antiparallel polarization is reversed along with the magnetization reversal of the SMM. The two-electron occupation indeed enhances the transport current compared with the single-electron process. However the increase of Coulomb interaction results in the suppression of spin-current amplitude at the electron-hole symmetry point. We propose a scheme to compensate the suppression with the magnetic field.

Spin-polarized photoemission

International Nuclear Information System (INIS)

Johnson, Peter D.

1997-01-01

Spin-polarized photoemission has developed into a versatile tool for the study of surface and thin film magnetism. In this review, we examine the methodology of the technique and its application to a number of different problems, including both valence band and core level studies. After a detailed review of spin-polarization measurement techniques and the related experimental requirements we consider in detail studies of the bulk properties both above and below the Curie temperature. This section also includes a discussion of observations relating to unique metastable phases obtained via epitaxial growth. The application of the technique to the study of surfaces, both clean and adsorbate covered, is reviewed. The report then examines, in detail, studies of the spin-polarized electronic structure of thin films and the related interfacial magnetism. Finally, observations of spin-polarized quantum well states in non-magnetic thin films are discussed with particular reference to their mediation of the oscillatory exchange coupling in related magnetic multilayers. (author)

Transport Through a Precessing Spin Coupled to Noncollinearly Polarized Ferromagnetic Leads

International Nuclear Information System (INIS)

Wang Xianchao; Xin Zihua; Feng Liya

2010-01-01

The quantum electronic transport through a precessing magnetic spin coupled to noncollinearly polarized ferromagnetic leads (F-MS-F) has been studied in this paper. The nonequilibrium Green function approach is used to calculate local density of states (LDOS) and current in the presence of external bias. The characters of LDOS and the electronic current are obtained. The tunneling current is investigated for different precessing angle and different configurations of the magnetization of the leads. The investigation reveals that when the precessing angle takes θ < π/2 and negative bias is applied, the resonant tunneling current appears, otherwise, it appears when positive bias is applied. When the leads are totally polarized and the precessing angel takes 0, the tunneling current changes with the configuration of two leads; and it becomes zero when the two leads are antiparallel. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Electron-Spin Filters Would Offer Spin Polarization Greater than 1

Science.gov (United States)

Ting, David Z.

2009-01-01

A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

Spin polarized deuterium

International Nuclear Information System (INIS)

Glyde, H.R.; Hernadi, S.I.

1986-01-01

Several ground state properties of (electron) spin-polarized deuterium (D) such as the energy, single quasiparticle energies and lifetimes, Landau parameters and sound velocities are evaluated. The calculations begin with the Kolos-Wolneiwicz potential and use the Galitskii-FeynmanHartree-Fock (GFHF) approximation. The deuteron nucleas has spin I = 1, and spin states I/sub z/ = 1,0,-1. We explore D 1 , D 2 and D 3 in which, respectively, one spin state only is populated, two states are equally populated, and three states are equally populated. We find the GFHF describes D 1 well, but D 2 and D 3 less well. The Landau parameters, F/sub L/, are small compared to liquid 3 He and very small for doubly polarized D 1 (i.e. the F/sub L/ decrease with nuclear polarization)

Highly spin-polarized materials and devices for spintronics∗.

Science.gov (United States)

Inomata, Koichiro; Ikeda, Naomichi; Tezuka, Nobuki; Goto, Ryogo; Sugimoto, Satoshi; Wojcik, Marek; Jedryka, Eva

2008-01-01

The performance of spintronics depends on the spin polarization of the current. In this study half-metallic Co-based full-Heusler alloys and a spin filtering device (SFD) using a ferromagnetic barrier have been investigated as highly spin-polarized current sources. The multilayers were prepared by magnetron sputtering in an ultrahigh vacuum and microfabricated using photolithography and Ar ion etching. We investigated two systems of Co-based full-Heusler alloys, Co 2 Cr 1 - x Fe x Al (CCFA( x )) and Co 2 FeSi 1 - x Al x (CFSA( x )) and revealed the structure and magnetic and transport properties. We demonstrated giant tunnel magnetoresistance (TMR) of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs) using Co 2 FeSi 0.5 Al 0.5 (CFSA(0.5)) Heusler alloy electrodes. The 390% TMR corresponds to 0.81 spin polarization for CFSA(0.5) at 5 K. We also investigated the crystalline structure and local structure around Co atoms by x-ray diffraction (XRD) and nuclear magnetic resonance (NMR) analyses, respectively, for CFSA films sputtered on a Cr-buffered MgO (001) substrate followed by post-annealing at various temperatures in an ultrahigh vacuum. The disordered structures in CFSA films were clarified by NMR measurements and the relationship between TMR and the disordered structure was discussed. We clarified that the TMR of the MTJs with CFSA(0.5) electrodes depends on the structure, and is significantly higher for L2 1 than B2 in the crystalline structure. The second part of this paper is devoted to a SFD using a ferromagnetic barrier. The Co ferrite is investigated as a ferromagnetic barrier because of its high Curie temperature and high resistivity. We demonstrate the strong spin filtering effect through an ultrathin insulating ferrimagnetic Co-ferrite barrier at a low temperature. The barrier was prepared by the surface plasma oxidization of a CoFe 2 film deposited on a MgO (001) single crystal substrate, wherein the spinel

Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

International Nuclear Information System (INIS)

Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

2010-01-01

The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

Science.gov (United States)

Burton, J D; Tsymbal, E Y

2011-04-15

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

Science.gov (United States)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin-polarized

Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

OpenAIRE

Misiorny, Maciej; Barnas, Józef

2006-01-01

Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

International Nuclear Information System (INIS)

Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.

2016-01-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

2016-08-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Khayatzadeh Mahani, Mohammad Reza; Faizabadi, Edris

2008-01-01

The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In x Ga (1-x) As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

Jimy Encomendero

2017-10-01

Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

Versatile spin-polarized electron source

Science.gov (United States)

Jozwiak, Chris; Park, Cheol -Hwan; Gotlieb, Kenneth; Louie, Steven G.; Hussain, Zahid; Lanzara, Alessandra

2015-09-22

One or more embodiments relate generally to the field of photoelectron spin and, more specifically, to a method and system for creating a controllable spin-polarized electron source. One preferred embodiment of the invention generally comprises: method for creating a controllable spin-polarized electron source comprising the following steps: providing one or more materials, the one or more materials having at least one surface and a material layer adjacent to said surface, wherein said surface comprises highly spin-polarized surface electrons, wherein the direction and spin of the surface electrons are locked together; providing at least one incident light capable of stimulating photoemission of said surface electrons; wherein the photon polarization of said incident light is tunable; and inducing photoemission of the surface electron states.

Spin tunnelling in mesoscopic systems

Indian Academy of Sciences (India)

We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the ...

Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

Science.gov (United States)

Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

2015-09-01

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

2015-01-01

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-10-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

Spin tunnelling in mesoscopic systems

Science.gov (United States)

Garg, Anupam

2001-02-01

We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the space of magnetic fields, known as diabolical points. This phenomena is explained in terms of two approaches, one based on spin-coherent-state path integrals, and the other on a generalization of the phase integral (or WKB) method to difference equations. Explicit formulas for the diabolical points are obtained for a model Hamiltonian.

Dynamics of spin-flip photon-assisted tunneling

NARCIS (Netherlands)

Braakman, F.R.; Danon, J.; Schreiber, L.R.; Wegscheider, W.; Vandersypen, L.M.K.

2014-01-01

We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

Science.gov (United States)

Song, Yipu; Schmitt, Andrew L; Jin, Song

2008-08-01

Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

Tunnel splitting in biaxial spin models investigated with spin-coherent-state path integrals

International Nuclear Information System (INIS)

Chen Zhide; Liang, J.-Q.; Pu, F.-C.

2003-01-01

Tunnel splitting in biaxial spin models is investigated with a full evaluation of the fluctuation functional integrals of the Euclidean kernel in the framework of spin-coherent-state path integrals which leads to a magnitude of tunnel splitting quantitatively comparable with the numerical results in terms of diagonalization of the Hamilton operator. An additional factor resulted from a global time transformation converting the position-dependent mass to a constant one seems to be equivalent to the semiclassical correction of the Lagrangian proposed by Enz and Schilling. A long standing question whether the spin-coherent-state representation of path integrals can result in an accurate tunnel splitting is therefore resolved

POLARIZED BEAMS: 1 - Longitudinal electron spin polarization at HERA

Energy Technology Data Exchange (ETDEWEB)

Anon.

1994-09-15

Wednesday 4 May marked a turning point in the art of the manipulation of spins in electron storage rings: longitudinal electron spin polarization (with the spins oriented along the electrons' direction of motion) was established in the electron ring of HERA, the electronproton collider at DESY in Hamburg. A polarization level of about 55% was obtained and polarizations of over 60% were reproducibly obtained in the following days. The beam energy was 27.52 GeV, corresponding to half integer spin tune of 62.5.

Instantons and magnetization tunneling: Beyond the giant-spin approximation

International Nuclear Information System (INIS)

Florez, J.M.; Vargas, P.; Nunez, Alvaro S.

2009-01-01

In this work we show that commonly neglected fluctuations of the net total spin of a molecular nanomagnet strongly modified its tunneling properties and provide a scenario to explain some discrepancies between theory and experiment. Starting off from an effective spin Hamiltonian, we study the quantum tunneling of the magnetization of molecular nanomagnets in the regime where the giant-spin approximation is breaking down. This study is done using an instanton description of the tunneling path. The instanton is calculated considering its coupling to quantum fluctuations.

Muonium spin exchange in spin-polarized media: Spin-flip and -nonflip collisions

International Nuclear Information System (INIS)

Senba, M.

1994-01-01

The transverse relaxation of the muon spin in muonium due to electron spin exchange with a polarized spin-1/2 medium is investigated. Stochastic calculations, which assume that spin exchange is a Poisson process, are carried out for the case where the electron spin polarization of the medium is on the same axis as the applied field. Two precession signals of muonium observed in intermediate fields (B>30 G) are shown to have different relaxation rates which depend on the polarization of the medium. Furthermore, the precession frequencies are shifted by an amount which depends on the spin-nonflip rate. From the two relaxation rates and the frequency shift in intermediate fields, one can determine (i) the encounter rate of muonium and the paramagnetic species, (ii) the polarization of the medium, and most importantly (iii) the quantum-mechanical phase shift (and its sign) associated with the potential energy difference between electron singlet and triplet encounters. Effects of spin-nonflip collisions on spin dynamics are discussed for non-Poisson as well as Poisson processes. In unpolarized media, the time evolution of the muon spin in muonium is not influenced by spin-nonflip collisions, if the collision process is Poissonian. This seemingly obvious statement is not true anymore in non-Poissonian processes, i.e., it is necessary to specify both spin-flip and spin-nonflip rates to fully characterize spin dynamics

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

International Nuclear Information System (INIS)

Zou Jianfei; Jin Guojun; Ma Yuqiang

2009-01-01

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

Science.gov (United States)

Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

2009-03-25

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Destructive quantum interference in spin tunneling problems

OpenAIRE

von Delft, Jan; Henley, Christopher L.

1992-01-01

In some spin tunneling problems, there are several different but symmetry-related tunneling paths that connect the same initial and final configurations. The topological phase factors of the corresponding tunneling amplitudes can lead to destructive interference between the different paths, so that the total tunneling amplitude is zero. In the study of tunneling between different ground state configurations of the Kagom\\'{e}-lattice quantum Heisenberg antiferromagnet, this occurs when the spi...

Spin tunnelling dynamics for spin-1 Bose-Einstein condensates in a swept magnetic field

International Nuclear Information System (INIS)

Wang Guanfang; Fu Libin; Liu Jie

2008-01-01

We investigate the spin tunnelling of spin-1 Bose-Einstein condensates in a linearly swept magnetic field with a mean-field treatment. We focus on the two typical alkali Bose atoms 87 Rb and 23 Na condensates and study their tunnelling dynamics according to the sweep rates of the external magnetic fields. In the adiabatic (i.e. slowly sweeping) and sudden (i.e. fast sweeping) limits, no tunnelling is observed. For the case of moderate sweep rates, the tunnelling dynamics is found to be very sensitive to the sweep rates, so the plots of tunnelling probability versus sweep rate only become resolvable at a resolution of 10 -4 G s -1 . Moreover, a conserved quantity standing for the magnetization in experiments is found to affect dramatically the dynamics of the spin tunnelling. Theoretically we have given a complete interpretation of the above findings, and our studies could stimulate the experimental study of spinor Bose-Einstein condensates

Theory of single-spin inelastic tunneling spectroscopy.

Science.gov (United States)

Fernández-Rossier, J

2009-06-26

I show that recent experiments of inelastic scanning tunneling spectroscopy of single and a few magnetic atoms are modeled with a phenomenological spin-assisted tunneling Hamiltonian so that the inelastic dI/dV line shape is related to the spin spectral weight of the magnetic atom. This accounts for the spin selection rules and dI/dV spectra observed experimentally for single Fe and Mn atoms deposited on Cu2N. In the case of chains of Mn atoms it is found necessary to include both first and second-neighbor exchange interactions as well as single-ion anisotropy.

Spin-polarized electron tunneling in bcc FeCo/MgO/FeCo(001) magnetic tunnel junctions.

Science.gov (United States)

Bonell, F; Hauet, T; Andrieu, S; Bertran, F; Le Fèvre, P; Calmels, L; Tejeda, A; Montaigne, F; Warot-Fonrose, B; Belhadji, B; Nicolaou, A; Taleb-Ibrahimi, A

2012-04-27

In combining spin- and symmetry-resolved photoemission, magnetotransport measurements and ab initio calculations we detangled the electronic states involved in the electronic transport in Fe(1-x)Co(x)(001)/MgO/Fe(1-x)Co(x)(001) magnetic tunnel junctions. Contrary to previous theoretical predictions, we observe a large reduction in TMR (from 530 to 200% at 20 K) for Co content above 25 atomic% as well as anomalies in the conductance curves. We demonstrate that these unexpected behaviors originate from a minority spin state with Δ(1) symmetry that exists below the Fermi level for high Co concentration. Using angle-resolved photoemission, this state is shown to be a two-dimensional state that occurs at both Fe(1-x)Co(x)(001) free surface, and more importantly at the interface with MgO. The combination of this interface state with the peculiar density of empty states due to chemical disorder allows us to describe in details the complex conduction behavior in this system.

Spin-polarized scanning electron microscopy

International Nuclear Information System (INIS)

Kohashi, Teruo

2014-01-01

Spin-Polarized Scanning Electron Microscopy (Spin SEM) is one way for observing magnetic domain structures taking advantage of the spin polarization of the secondary electrons emitted from a ferromagnetic sample. This principle brings us several excellent capabilities such as high-spatial resolution better than 10 nm, and analysis of magnetization direction in three dimensions. In this paper, the principle and the structure of the spin SEM is briefly introduced, and some examples of the spin SEM measurements are shown. (author)

Spontaneous spin polarization in quantum wires

Energy Technology Data Exchange (ETDEWEB)

Vasilchenko, A.A., E-mail: a_vas2002@mail.ru

2015-12-04

The total energy of a quasi-one-dimensional electron system was calculated using the density functional theory. In the absence of a magnetic field, we have found that ferromagnetic state occurs in the quantum wires. The phase diagram of the transition into the spin-polarized state is constructed. The critical electron density below which electrons are in spin-polarized state is estimated analytically. - Highlights: • Density functional theory used to study a spin-polarized state in quantum wires. • The Kohn–Sham equation for quasi-one-dimensional electrons solved numerically. • The phase diagram of the transition into the spin-polarized state is constructed. • The electron density below which electrons are in a spin-polarized state was found. • The critical density of electrons was estimated analytically.

Spontaneous spin polarization in quantum wires

International Nuclear Information System (INIS)

Vasilchenko, A.A.

2015-01-01

The total energy of a quasi-one-dimensional electron system was calculated using the density functional theory. In the absence of a magnetic field, we have found that ferromagnetic state occurs in the quantum wires. The phase diagram of the transition into the spin-polarized state is constructed. The critical electron density below which electrons are in spin-polarized state is estimated analytically. - Highlights: • Density functional theory used to study a spin-polarized state in quantum wires. • The Kohn–Sham equation for quasi-one-dimensional electrons solved numerically. • The phase diagram of the transition into the spin-polarized state is constructed. • The electron density below which electrons are in a spin-polarized state was found. • The critical density of electrons was estimated analytically.

Sensing Noncollinear Magnetism at the Atomic Scale Combining Magnetic Exchange and Spin-Polarized Imaging.

Science.gov (United States)

Hauptmann, Nadine; Gerritsen, Jan W; Wegner, Daniel; Khajetoorians, Alexander A

2017-09-13

Storing and accessing information in atomic-scale magnets requires magnetic imaging techniques with single-atom resolution. Here, we show simultaneous detection of the spin-polarization and exchange force with or without the flow of current with a new method, which combines scanning tunneling microscopy and noncontact atomic force microscopy. To demonstrate the application of this new method, we characterize the prototypical nanoskyrmion lattice formed on a monolayer of Fe/Ir(111). We resolve the square magnetic lattice by employing magnetic exchange force microscopy, demonstrating its applicability to noncollinear magnetic structures for the first time. Utilizing distance-dependent force and current spectroscopy, we quantify the exchange forces in comparison to the spin-polarization. For strongly spin-polarized tips, we distinguish different signs of the exchange force that we suggest arises from a change in exchange mechanisms between the probe and a skyrmion. This new approach may enable both nonperturbative readout combined with writing by current-driven reversal of atomic-scale magnets.

Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

International Nuclear Information System (INIS)

Yan, Zhongbo; Wan, Shaolong

2016-01-01

Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance. (paper)

Suppression of tunneling by interference in half-integer--spin particles

OpenAIRE

Loss, Daniel; DiVincenzo, David P.; Grinstein, G.

1992-01-01

Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A coherent-state path integral calculation shows that this topological effect results from interference between tunneling paths.

Effect of quantum tunneling on spin Hall magnetoresistance.

Science.gov (United States)

Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

2017-02-22

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

Nuclear spin polarized H and D by means of spin-exchange optical pumping

Science.gov (United States)

Stenger, Jörn; Grosshauser, Carsten; Kilian, Wolfgang; Nagengast, Wolfgang; Ranzenberger, Bernd; Rith, Klaus; Schmidt, Frank

1998-01-01

Optically pumped spin-exchange sources for polarized hydrogen and deuterium atoms have been demonstrated to yield high atomic flow and high electron spin polarization. For maximum nuclear polarization the source has to be operated in spin temperature equilibrium, which has already been demonstrated for hydrogen. In spin temperature equilibrium the nuclear spin polarization PI equals the electron spin polarization PS for hydrogen and is even larger than PS for deuterium. We discuss the general properties of spin temperature equilibrium for a sample of deuterium atoms. One result are the equations PI=4PS/(3+PS2) and Pzz=PSṡPI, where Pzz is the nuclear tensor polarization. Furthermore we demonstrate that the deuterium atoms from our source are in spin temperature equilibrium within the experimental accuracy.

Magnetic switching of a single molecular magnet due to spin-polarized current

Science.gov (United States)

Misiorny, Maciej; Barnaś, Józef

2007-04-01

Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

International Nuclear Information System (INIS)

Yu Zhaoxian; Jiao Zhiyong

2004-01-01

In this Letter, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-±1, spin-0 and spin-±2 exhibit the step structure under the external cosinusoidal magnetic field, respectively, but there do not exist step structure among spin-±1 and spin-±2. The tunneling current among spin-±1 and spin-±2 may exhibit periodically oscillation behavior, but among spin-0 and spin-±1, spin-0 and spin-±2, the tunneling currents exhibit irregular oscillation behavior

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

Science.gov (United States)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

2014-04-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

2014-04-15

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

International Nuclear Information System (INIS)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

2014-01-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

OpenAIRE

Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

2009-01-01

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

Diffusion equation and spin drag in spin-polarized transport

DEFF Research Database (Denmark)

Flensberg, Karsten; Jensen, Thomas Stibius; Mortensen, Asger

2001-01-01

We study the role of electron-electron interactions for spin-polarized transport using the Boltzmann equation, and derive a set of coupled transport equations. For spin-polarized transport the electron-electron interactions are important, because they tend to equilibrate the momentum of the two-s...

Spin flipping a stored polarized proton beam

International Nuclear Information System (INIS)

Caussyn, D.D.; Derbenev, Y.S.; Ellison, T.J.P.; Lee, S.Y.; Rinckel, T.; Schwandt, P.; Sperisen, F.; Stephenson, E.J.; von Przewoski, B.; Blinov, B.B.; Chu, C.M.; Courant, E.D.; Crandell, D.A.; Kaufman, W.A.; Krisch, A.D.; Nurushev, T.S.; Phelps, R.A.; Ratner, L.G.; Wong, V.K.; Ohmori, C.

1994-01-01

We recently studied the spin flipping of a vertically polarized, stored 139-MeV proton beam. To flip the spin, we induced an rf depolarizing resonance by sweeping our rf solenoid magnet's frequency through the resonance frequency. With multiple spin flips, we found a polarization loss of 0.0000±0.0005 per spin flip under the best conditions; this loss increased significantly for small changes in the conditions. Minimizing the depolarization during each spin flip is especially important because frequent spin flipping could significantly reduce the systematic errors in stored polarized-beam experiments

Tunneling path toward spintronics

International Nuclear Information System (INIS)

Miao Guoxing; Moodera, Jagadeesh S; Muenzenberg, Markus

2011-01-01

The phenomenon of quantum tunneling, which was discovered almost a century ago, has led to many subsequent discoveries. One such discovery, spin polarized tunneling, was made 40 years ago by Robert Meservey and Paul Tedrow (Tedrow and Meservey 1971 Phys. Rev. Lett. 26 192), and it has resulted in many fundamental observations and opened up an entirely new field of study. Until the mid-1990s, this field developed at a steady, low rate, after which a huge increase in activity suddenly occurred as a result of the unraveling of successful spin tunneling between two ferromagnets. In the past 15 years, several thousands of papers related to spin polarized tunneling and transport have been published, making this topic one of the hottest areas in condensed matter physics from both fundamental science and applications viewpoints. Many review papers and book chapters have been written in the past decade on this subject. This paper is not exhaustive by any means; rather, the emphases are on recent progress, technological developments and informing the reader about the current direction in which this topic is moving.

Observation of spin-selective tunneling in SiGe nanocrystals.

Science.gov (United States)

Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

2011-12-09

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

Antiresonance induced spin-polarized current generation

Science.gov (United States)

Yin, Sun; Min, Wen-Jing; Gao, Kun; Xie, Shi-Jie; Liu, De-Sheng

2011-12-01

According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

Resonant tunneling of spin-wave packets via quantized states in potential wells.

Science.gov (United States)

Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O

2007-09-21

We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

Spin-polarized scanning tunneling microscopy of magnetic nanostructures at the example of bcc-Co/Fe(110), Fe/Mo(110), and copper phthalocyanine/Fe(1110); Spinpolarisierte Rastertunnelmikroskopie magnetischer Nanostrukturen am Beispiel von bcc-Co/Fe(110), Fe/Mo(110) und Kupfer-Phthalocyanin/Fe(110)

Energy Technology Data Exchange (ETDEWEB)

Methfessel, Torsten

2010-12-09

This thesis provides an introduction into the technique of spin-polarized scanning tunnelling microscopy and spectroscopy as an experimental method for the investigation of magnetic nanostructures. Experimental results for the spin polarized electronic structure depending on the crystal structure of ultrathin Co layers, and depending on the direction of the magnetization for ultrathin Fe layers are presented. High-resolution measurements show the position-dependent spin polarization on a single copper-phthalocyanine molecule deposited on a ferromagnetic surface. Co was deposited by molecular beam epitaxy on the (110) surface of the bodycentered cubic metals Cr and Fe. In contrast to previous reports in the literature only two layers of Co can be stabilized in the body-centered cubic (bcc) structure. The bcc-Co films on the Fe(110) surface show no signs of epitaxial distortions. Thicker layers reconstruct into a closed-packed structure (hcp / fcc). The bcc structure increases the spin-polarization of Co to P=62 % in comparison to hcp-Co (P=45 %). The temperature-dependent spin-reorientation of ultrathin Fe/Mo(110) films was investigated by spin-polarized spectroscopy. A reorientation of the magnetic easy axis from the [110] direction along the surface normal to the in-plane [001] axis is observed at T (13.2{+-}0.5) K. This process can be identified as a discontinuous reorientation transition, revealing two simultaneous minima of the free energy in a certain temperature range. The electronic structure of mono- and double-layer Fe/Mo(110) shows a variation with the reorientation of the magnetic easy axis and with the direction of the magnetization. The investigation of the spin-polarized charge transport through a copper-phthalocyanine molecule on the Fe/Mo(110) surface provides an essential contribution to the understanding of spin-transport at the interface between metal and organic molecule. Due to the interaction with the surface of the metal the HOMO-LUMO energy

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

2017-01-01

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

Spin Tunneling in a Rotating Nanomagnet

Science.gov (United States)

O'Keeffe, Michael; Chudnovsky, Eugene; Lehman College Theoretical Condensed Matter Physics Team

2011-03-01

We study spin tunneling in a magnetic nanoparticle with biaxial anisotropy that is free to rotate about its anisotropy axis. Exact instanton of the coupled equations of motion is found that connects degenerate classical energy minima. We show that mechanical freedom of the particle renormalizes magnetic anisotropy and increases the tunnel splitting. M. F. O'Keeffe and E. M. Chudnovsky, cond-mat, arXiv:1011.3134.

Spin polarization of graphene and h -BN on Co(0001) and Ni(111) observed by spin-polarized surface positronium spectroscopy

Science.gov (United States)

Miyashita, A.; Maekawa, M.; Wada, K.; Kawasuso, A.; Watanabe, T.; Entani, S.; Sakai, S.

2018-05-01

In spin-polarized surface positronium annihilation measurements, the spin polarizations of graphene and h -BN on Co(0001) were higher than those on Ni(111), while no significant differences were seen between graphene and h -BN on the same metal. The obtained spin polarizations agreed with those expected from first-principles calculations considering the positron wave function and the electron density of states from the first surface layer to the vacuum region. The higher spin polarizations of graphene and h -BN on Co(0001) as compared to Ni(111) simply reflect the spin polarizations of these metals. The comparable spin polarizations of graphene and h -BN on the same metal are attributed to the creation of similar electronic states due to the strong influence of the metals: the Dirac cone of graphene and the band gap of h -BN disappear as a consequence of d -π hybridization.

Angular dependence of spin transfer torque on magnetic tunnel junctions with synthetic ferrimagnetic free layer

International Nuclear Information System (INIS)

Ichimura, M; Hamada, T; Imamura, H; Takahashi, S; Maekawa, S

2010-01-01

Based on a spin-polarized free-electron model, spin and charge transports are analyzed in magnetic tunnel junctions with synthetic ferrimagnetic layers in the ballistic regime, and the spin transfer torque is derived. We characterize the synthetic ferrimagnetic free layer by extending an arbitrary direction of magnetizations of the two free layers forming the synthetic ferrimagnetic free layer. The synthetic ferrimagnetic configuration exerts the approximately optimum torque for small magnetization angle of the first layer relative to that of the pinned layer. For approximately anti-parallel magnetization of the first layer to that of the pinned layer, the parallel magnetization of two magnetic layers is favorable for magnetization reversal rather than the synthetic ferrimagnetic configuration.

Inelastic electron tunneling spectroscopy of a single nuclear spin.

Science.gov (United States)

Delgado, F; Fernández-Rossier, J

2011-08-12

Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

The electron-spin--nuclear-spin interaction studied by polarized neutron scattering.

Science.gov (United States)

Stuhrmann, Heinrich B

2007-11-01

Dynamic nuclear spin polarization (DNP) is mediated by the dipolar interaction of paramagnetic centres with nuclear spins. This process is most likely to occur near paramagnetic centres at an angle close to 45 degrees with respect to the direction of the external magnetic field. The resulting distribution of polarized nuclear spins leads to an anisotropy of the polarized neutron scattering pattern, even with randomly oriented radical molecules. The corresponding cross section of polarized coherent neutron scattering in terms of a multipole expansion is derived for radical molecules in solution. An application using data of time-resolved polarized neutron scattering from an organic chromium(V) molecule is tested.

Photoemission of Bi_{2}Se_{3} with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

Directory of Open Access Journals (Sweden)

J. Sánchez-Barriga

2014-03-01

Full Text Available Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50–70 eV with linear or circular polarization indeed probe the initial-state spin texture of Bi_{2}Se_{3} while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.

The spin-spin effect in the total neutron cross section of polarized neutrons on polarized 165Ho

International Nuclear Information System (INIS)

Fasoli, U.; Galeazzi, G.; Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R.

1978-01-01

The spin-spin effect in the total neutron cross section of polarized neutrons on polarized 165 Ho has been measured in the energy interval 0.4 to 2.5 MeV, in perpendicular geometry. The results are consistent with zero effect. The spin-spin cross section sigmasub(ss) has been theoretically evaluated by a non-adiabatic coupled-channel calculation. From the comparison between the experimental and theoretical results a value Vsub(ss) = 9+-77 keV for the strength of the spin-spin potential has been obtained. Compound-nucleus effects do not seem to be relevant. (Auth.)

Electrically tunable spin polarization in silicene: A multi-terminal spin density matrix approach

International Nuclear Information System (INIS)

Chen, Son-Hsien

2016-01-01

Recent realized silicene field-effect transistor yields promising electronic applications. Using a multi-terminal spin density matrix approach, this paper presents an analysis of the spin polarizations in a silicene structure of the spin field-effect transistor by considering the intertwined intrinsic and Rashba spin–orbit couplings, gate voltage, Zeeman splitting, as well as disorder. Coexistence of the stagger potential and intrinsic spin–orbit coupling results in spin precession, making any in-plane polarization directions reachable by the gate voltage; specifically, the intrinsic coupling allows one to electrically adjust the in-plane components of the polarizations, while the Rashba coupling to adjust the out-of-plan polarizations. Larger electrically tunable ranges of in-plan polarizations are found in oppositely gated silicene than in the uniformly gated silicene. Polarizations in different phases behave distinguishably in weak disorder regime, while independent of the phases, stronger disorder leads to a saturation value. - Highlights: • Density matrix with spin rotations enables multi-terminal arbitrary spin injections. • Gate-voltage tunable in-plane polarizations require intrinsic SO coupling. • Gate-voltage tunable out-of-plane polarizations require Rashba SO coupling. • Oppositely gated silicene yields a large tunable range of in-plan polarizations. • Polarizations in different phases behave distinguishably only in weak disorder.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-01-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

Generating highly polarized nuclear spins in solution using dynamic nuclear polarization

DEFF Research Database (Denmark)

Wolber, J.; Ellner, F.; Fridlund, B.

2004-01-01

A method to generate strongly polarized nuclear spins in solution has been developed, using Dynamic Nuclear Polarization (DNP) at a temperature of 1.2K, and at a field of 3.354T, corresponding to an electron spin resonance frequency of 94GHz. Trityl radicals are used to directly polarize 13C...... and other low-γ nuclei. Subsequent to the DNP process, the solid sample is dissolved rapidly with a warm solvent to create a solution of molecules with highly polarized nuclear spins. Two main applications are proposed: high-resolution liquid state NMR with enhanced sensitivity, and the use...

Inducing spin-dependent tunneling to probe magnetic correlations in optical lattices

DEFF Research Database (Denmark)

Pedersen, Kim-Georg; Andersen, Brian; Syljuåsen, Olav

2012-01-01

We suggest a simple experimental method for probing antiferromagnetic spin correlations of two-component Fermi gases in optical lattices. The method relies on a spin selective Raman transition to excite atoms of one spin species to their first excited vibrational mode where the tunneling is large....... The resulting difference in the tunneling dynamics of the two spin species can then be exploited, to reveal the spin correlations by measuring the number of doubly occupied lattice sites at a later time. We perform quantum Monte Carlo simulations of the spin system and solve the optical lattice dynamics...

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Spin-polarized SEM

International Nuclear Information System (INIS)

Konoto, Makoto

2007-01-01

Development of highly effective evaluation technology of magnetic structures on a nanometric scale is a key to understanding spintronics and related phenomena. A high-resolution spin-polarized scanning electron microscope (spin SEM) developed recently is quite suitable for probing such nanostructures because of the capability of analyzing local magnetization vectors in three dimensions. Utilizing the spin SEM, a layered antiferromagnetic structure with the 1nm-alternation of bilayer-sheet magnetization has been successfully resolved. The real-space imaging with full analysis of the temperature-dependent magnetization vectors will be demonstrated. (author)

Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

OpenAIRE

Yu, Zhao-xian; Jiao, Zhi-yong

2003-01-01

In this paper, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-$\\pm1$, spin-0 and spin-$\\pm2$ exhibit the step structure under the external cosinusoidal magnetic field respectively, but there do not exist step structure among spin-$\\pm1$ and spin-$\\pm2$. The tunneling current among spin-$\\pm1$ and spin-$\\pm2$ may exhibit periodically oscillation behavior, but among spin-0 and spin-$\\p...

Development of spin polarized electron beam

International Nuclear Information System (INIS)

Nakanishi, Tsutomu

2001-01-01

Physical structure of the polarized electron beam production is explained in this paper. Nagoya University group has been improving the quality of beam. The present state of quality and the development objects are described. The new results of the polarized electron reported in 'RES-2000 Workshop' in October 2000, are introduced. The established ground of GaAs type polarized electron beam source, observation of the negative electron affinity (NEA) surface, some problems of NEA surface of high energy polarized electron beam such as the life, time response, the surface charge limited phenomena of NEA surface are explained. The interested reports in the RES-2000 Workshop consisted of observation by SPLEEM (Spin Low Energy Electron Microscope), Spin-STM and Spin-resolved Photoelectron Spectroscopy. To increase the performance of the polarized electron source, we will develop low emittance and large current. (S.Y.)

Concept for room temperature single-spin tunneling force microscopy with atomic spatial resolution

Science.gov (United States)

Payne, Adam

A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy (AFM) system noise. The results show that the approach could provide single-spin measurement of electrically isolated defect states with atomic spatial resolution at room temperature.

Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy

Science.gov (United States)

Payne, A.; Ambal, K.; Boehme, C.; Williams, C. C.

2015-05-01

A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy system noise. The results show that the approach could provide single-spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.

Optical pumping production of spin polarized hydrogen

International Nuclear Information System (INIS)

Knize, R.J.; Happer, W.; Cecchi, J.L.

1984-01-01

There has been much interest recently in the production of large quantities of spin polarized hydrogen in various fields including controlled fusion, quantum fluids, high energy, and nuclear physics. One promising method for the development of large quantities of spin polarized hydrogen is the utilization of optical pumping with a laser. Optical pumping is a process where photon angular momentum is converted into electron and nuclear spin. The advent of tunable CW dye lasers (approx. 1 watt) allow the production of greater than 10 18 polarized atoms/sec. We have begun a program at Princeton to investigate the physics and technology of using optical pumping to produce large quantities of spin polarized hydrogen. Initial experiments have been done in small closed glass cells. Eventually, a flowing system, open target, or polarized ion source could be constructed

Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2

Science.gov (United States)

Tahir, M.; Krstajić, P. M.; Vasilopoulos, P.

2017-06-01

The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin Ms and valley Mv Zeeman fields and of an electric potential U . The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin Ps and valley Pv polarizations rise with M =Mv=2 Ms , reach a value of more than 55 % , and become perfect above U ≈45 meV while for a double junction this change can occur for U ≥50 meV and M ≥5 meV. In certain regions of the (M ,U ) plane Pv becomes perfect. The conductance gc, its spin-up and spin-down components, and both polarizations oscillate with the barrier width d . The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices.

Quantum description of spin tunneling in magnetic molecules

Science.gov (United States)

Galetti, D.

2007-01-01

Starting from a phenomenological Hamiltonian originally written in terms of angular momentum operators we derive a new quantum angle-based Hamiltonian that allows for a discussion on the quantum spin tunneling. The study of the applicability of the present approach, carried out in calculations with a soluble quasi-spin model, shows that we are allowed to use our method in the description of physical systems such as the Mn12-acetate molecule, as well as the octanuclear iron cluster, Fe8, in a reliable way. With the present description the interpretation of the spin tunneling is seen to be direct, the spectra and energy barriers of those systems are obtained, and it is shown that they agree with the experimental ones.

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic / superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic/superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

Hole dynamics and spin currents after ionization in strong circularly polarized laser fields

International Nuclear Information System (INIS)

Barth, Ingo; Smirnova, Olga

2014-01-01

We apply the time-dependent analytical R-matrix theory to develop a movie of hole motion in a Kr atom upon ionization by strong circularly polarized field. We find rich hole dynamics, ranging from rotation to swinging motion. The motion of the hole depends on the final energy and the spin of the photoelectron and can be controlled by the laser frequency and intensity. Crucially, hole rotation is a purely non-adiabatic effect, completely missing in the framework of quasistatic (adiabatic) tunneling theories. We explore the possibility to use hole rotation as a clock for measuring ionization time. Analyzing the relationship between the relative phases in different ionization channels we show that in the case of short-range electron-core interaction the hole is always initially aligned along the instantaneous direction of the laser field, signifying zero delays in ionization. Finally, we show that strong-field ionization in circular fields creates spin currents (i.e. different flow of spin-up and spin-down density in space) in the ions. This phenomenon is intimately related to the production of spin-polarized electrons in strong laser fields Barth and Smirnova (2013 Phys. Rev. A 88 013401). We demonstrate that rich spin dynamics of electrons and holes produced during strong field ionization can occur in typical experimental conditions and does not require relativistic intensities or strong magnetic fields. (paper)

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

International Nuclear Information System (INIS)

Wilczynski, M.

2011-01-01

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Science.gov (United States)

Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

2011-04-01

A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

Spin-polarizated transmissivity in an asymmetrical double barrier

International Nuclear Information System (INIS)

Teixeira, J D S; Frota, H O; Bittencourt, A C R

2014-01-01

The spin-polarized electron resonant tunnelling at zero magnetic field through a double barrier heterostructure like InAs/GaSb/InAs/GaSb/InAs has been calculated as a function of the electron energy. A model is proposed to study the combined effects of Dresselhaus and in-plane Rashba spin-orbit interactions on the spin-dependent tunnelling, taking into account the k 3 dependence of the Dresselhaus Hamiltonian. For the directions ϕ=45 ∘ and 135 ∘ the spin mixing produces a 100% efficiency of polarization. Moreover, the effect of the Dresselhaus and Rashba spin-orbit interactions are shown to be quite favorable for the fabrication of spin filters and spintronic devices. (paper)

Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

International Nuclear Information System (INIS)

Jun-Qing, Zhao; Shi-Zhu, Qiao; Zhen-Feng, Jia; Ning-Yu, Zhang; Yan-Ju, Ji; Yan-Tao, Pang; Ying, Chen; Gang, Fu

2008-01-01

We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

Development of spin-polarized transmission electron microscope

International Nuclear Information System (INIS)

Kuwahara, M; Saitoh, K; Tanaka, N; Takeda, Y; Ujihara, T; Asano, H; Nakanishi, T

2011-01-01

In order to study spin related phenomena in nano-size materials, spin-polarized electron source (PES) has been employed for the incident beam in transmission electron microscope (TEM). The PES has been designed and constructed with optimizing for spin-polarized TEM. The illuminating system of TEM is also designed to focus the spin-polarized electron beam emitted from a semiconductor photocathode with a negative electron affinity (NEA) surface. The beam energy is set to below 40 keV which is lower energy type as a TEM, because the spin interaction with condensed matters is very small corresponding with a Coulomb interaction. The polarized electron gun has realized in an extra high vacuum (XHV) condition and high field gradient of 4 MV/m on a surface of photocathode. Furthermore, it demonstrated that 40-keV polarized electron beam was operated with a sub-milli second pulse mode by using the backside excitation type photocathode. This high performance PES will make it possible to observe dynamically a magnetic field images with high contrast and highspeed temporal imaging in TEM.

Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

Science.gov (United States)

Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

2016-01-18

Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

Tunneling between edge states in a quantum spin Hall system.

Science.gov (United States)

Ström, Anders; Johannesson, Henrik

2009-03-06

We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

concentration on spin-dependent resonant tunnelling in InAs/Ga1 ...

Indian Academy of Sciences (India)

Cent percentage polarization can be obtained in this strained non-magnetic double-barrier ... Keywords. Spin–orbit interaction; barrier transparency; polarization efficiency; tunnelling lifetime. 1. Introduction ..... Figure 6. Tunnelling lifetime vs.

Spin-orbit torque induced magnetic vortex polarity reversal utilizing spin-Hall effect

Science.gov (United States)

Li, Cheng; Cai, Li; Liu, Baojun; Yang, Xiaokuo; Cui, Huanqing; Wang, Sen; Wei, Bo

2018-05-01

We propose an effective magnetic vortex polarity reversal scheme that makes use of spin-orbit torque introduced by spin-Hall effect in heavy-metal/ferromagnet multilayers structure, which can result in subnanosecond polarity reversal without endangering the structural stability. Micromagnetic simulations are performed to investigate the spin-Hall effect driven dynamics evolution of magnetic vortex. The mechanism of magnetic vortex polarity reversal is uncovered by a quantitative analysis of exchange energy density, magnetostatic energy density, and their total energy density. The simulation results indicate that the magnetic vortex polarity is reversed through the nucleation-annihilation process of topological vortex-antivortex pair. This scheme is an attractive option for ultra-fast magnetic vortex polarity reversal, which can be used as the guidelines for the choice of polarity reversal scheme in vortex-based random access memory.

Spin Dynamics in Highly Spin Polarized Co1-xFexS2

Science.gov (United States)

Hoch, Michael J. R.; Kuhns, Philip L.; Moulton, William G.; Reyes, Arneil P.; Lu, Jun; Wang, Lan; Leighton, Chris

2006-09-01

Highly spin polarized or half-metallic systems are of considerable current interest because of their potential for spin injection in spintronics applications. The ferromagnet (FM) CoS2 is close to being a half-metal. Recent theoretical and experimental work has shown that the alloys Co1-xFexS2 (0.07 < x < 0.9) are highly spin polarized at low temperatures. The Fe concentration may be used to tune the spin polarization. Using 59Co FM- NMR we have investigated the spin dynamics in this family of alloys and have obtained information on the evolution of the d-band density of states at the Fermi level with x in the range 0 to 0.3. The results are compared with available theoretical predictions.

Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

International Nuclear Information System (INIS)

Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

2003-01-01

We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Robust techniques for polarization and detection of nuclear spin ensembles

Science.gov (United States)

Scheuer, Jochen; Schwartz, Ilai; Müller, Samuel; Chen, Qiong; Dhand, Ish; Plenio, Martin B.; Naydenov, Boris; Jelezko, Fedor

2017-11-01

Highly sensitive nuclear spin detection is crucial in many scientific areas including nuclear magnetic resonance spectroscopy, magnetic resonance imaging (MRI), and quantum computing. The tiny thermal nuclear spin polarization represents a major obstacle towards this goal which may be overcome by dynamic nuclear spin polarization (DNP) methods. The latter often rely on the transfer of the thermally polarized electron spins to nearby nuclear spins, which is limited by the Boltzmann distribution of the former. Here we utilize microwave dressed states to transfer the high (>92 % ) nonequilibrium electron spin polarization of a single nitrogen-vacancy center (NV) induced by short laser pulses to the surrounding 13C carbon nuclear spins. The NV is repeatedly repolarized optically, thus providing an effectively infinite polarization reservoir. A saturation of the polarization of the nearby nuclear spins is achieved, which is confirmed by the decay of the polarization transfer signal and shows an excellent agreement with theoretical simulations. Hereby we introduce the polarization readout by polarization inversion method as a quantitative magnetization measure of the nuclear spin bath, which allows us to observe by ensemble averaging macroscopically hidden polarization dynamics like Landau-Zener-Stückelberg oscillations. Moreover, we show that using the integrated solid effect both for single- and double-quantum transitions nuclear spin polarization can be achieved even when the static magnetic field is not aligned along the NV's crystal axis. This opens a path for the application of our DNP technique to spins in and outside of nanodiamonds, enabling their application as MRI tracers. Furthermore, the methods reported here can be applied to other solid state systems where a central electron spin is coupled to a nuclear spin bath, e.g., phosphor donors in silicon and color centers in silicon carbide.

Production of spin-polarized unstable nuclei by using polarized electron capture process

International Nuclear Information System (INIS)

Shimizu, S.

1998-01-01

Measurements of emitted radiation from spin polarized nuclei are used to get information on electromagnetic moment of ground state unstable nuclei together with spin or parity state of excited states of their decayed (daughter) nuclei. These data are known to be useful for experimental investigation into the structure of unstable nuclei far from the stability line. The present study aims to establish a general method applicable to 11 Be and 16 N nuclei. To produce spin polarization, a new method in which the electron spin polarization of Rb is firstly produced by laser pumping, then the electron is transferred to the unstable nuclear beam (RNB) when they passes through the Rb vapor is proposed. Finally the polarized RNB will be implanted into superfluid helium to remain with a long spin-relaxation time. Future experimental set up for the above measurement adopted in the available radioactive nuclear beam facilities is briefly described. (Ohno, S.)

Suppression of quantum tunneling for all spins for easy-axis systems

International Nuclear Information System (INIS)

Khare, Avinash; Paranjape, M. B.

2011-01-01

The semiclassical limit of quantum spin systems corresponds to a dynamical Lagrangian which contains the usual kinetic energy, the couplings and interactions of the spins, and an additional, first-order kinematical term which corresponds to the Wess-Zumino-Novikov-Witten (WZNW) term for the spin degree of freedom. It was shown that in the case of the kinetic dynamics determined only by the WZNW term, half-odd integer spin systems show a lack of tunneling phenomena, whereas integer spin systems are subject to it in the case of potentials with easy-plane easy-axis symmetry. Here we prove for the theory with a normal quadratic kinetic term of arbitrary strength or the first-order theory with azimuthal symmetry (which is equivalently the so-called easy-axis situation), that the tunneling is in fact suppressed for all nonzero values of spin. This model exemplifies the concept that in the presence of complex Euclidean action, it is necessary to use the ensuing complex critical points in order to define the quantum (perturbation) theory. In the present example, if we do not do so, exactly the opposite, erroneous conclusion that the tunneling is unsuppressed for all spins, is reached.

Optically pumped electron spin polarized targets for use in the production of polarized ion beams

International Nuclear Information System (INIS)

Anderson, L.W.

1979-01-01

The production of relatively dense electron spin polarized alkali metal vapor targets by optical pumping with intense cw dye lasers is discussed. The target density and electron spin polarization depend on the dye laser intensity and bandwidth, the magnetic field at the target, and the electron spin depolarization time. For example in a magnetic field of 1.5 x 10 3 G, and using 1 W dye laser with a bandwidth of 10 10 Hz one can construct an electron spin polarized Na vapor target with a target thickness of 1.6 x 10 13 atoms/cm 2 and an average electron spin polarization of about 90% even though the Na atoms are completely depolarized at every wall collision. Possible uses of the electron spin polarized targets for the production of intense beams of polarized H - or 3 He - ions are discussed. (orig.)

Spin polarized states in strongly asymmetric nuclear matter

International Nuclear Information System (INIS)

Isayev, A.A.; Yang, J.

2004-01-01

The possibility of appearance of spin polarized states in strongly asymmetric nuclear matter is analyzed within the framework of a Fermi liquid theory with the Skyrme effective interaction. The zero temperature dependence of the neutron and proton spin polarization parameters as functions of density is found for SLy4 and SLy5 effective forces. It is shown that at some critical density strongly asymmetric nuclear matter undergoes a phase transition to the state with the oppositely directed spins of neutrons and protons while the state with the same direction of spins does not appear. In comparison with neutron matter, even small admixture of protons strongly decreases the threshold density of spin instability. It is clarified that protons become totally polarized within a very narrow density domain while the density profile of the neutron spin polarization parameter is characterized by the appearance of long tails near the transition density

Determination of the spin polarization of a 4He+ ion beam

International Nuclear Information System (INIS)

Suzuki, T.; Yamauchi, Y.

2008-01-01

It was demonstrated that the spin polarization of a 4 He + ion beam (P He + ) can be determined from the spin dependence of the electron emission in the deexcitation process of spin-polarized He metastable atoms (He*, 2 3 S 1 ) and spin-polarized He + ions on Fe (100) surfaces. On Fe (100) surfaces, both He* and He + deexcite via Auger neutralization, and therefore, the spin asymmetry obtained from spin-polarized He + ion neutralization spectroscopy should be equal to that from spin-polarized metastable He* deexcitation spectroscopy. The spin polarization of He* was obtained from Stern-Gerlach measurements. P He + was finally determined to be 0.19±0.02

Quantum Entanglement of a Tunneling Spin with Mechanical Modes of a Torsional Resonator

Directory of Open Access Journals (Sweden)

D. A. Garanin

2011-08-01

Full Text Available We solve the Schrödinger equation for various quantum regimes describing a tunneling macrospin coupled to a torsional oscillator. The energy spectrum and freezing of spin tunneling are studied. Magnetic susceptibility, noise spectrum, and decoherence due to entanglement of spin and mechanical modes are computed. We show that the presence of a tunneling spin can be detected via splitting of the mechanical mode at the resonance. Our results apply to experiments with magnetic molecules coupled to nanoresonators.

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Science.gov (United States)

Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

2018-03-01

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

Interconnected magnetic tunnel junctions for spin-logic applications

Science.gov (United States)

Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

2018-05-01

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

Spin-polarized free electron beam interaction with radiation and superradiant spin-flip radiative emission

Directory of Open Access Journals (Sweden)

A. Gover

2006-06-01

Full Text Available The problems of spin-polarized free-electron beam interaction with electromagnetic wave at electron-spin resonance conditions in a magnetic field and of superradiant spin-flip radiative emission are analyzed in the framework of a comprehensive classical model. The spontaneous emission of spin-flip radiation from electron beams is very weak. We show that the detectivity of electron spin resonant spin-flip and combined spin-flip/cyclotron-resonance-emission radiation can be substantially enhanced by operating with ultrashort spin-polarized electron beam bunches under conditions of superradiant (coherent emission. The proposed radiative spin-state modulation and the spin-flip radiative emission schemes can be used for control and noninvasive diagnostics of polarized electron/positron beams. Such schemes are of relevance in important scattering experiments off nucleons in nuclear physics and off magnetic targets in condensed matter physics.

Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Jian [Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong (China)

2014-04-28

We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

Polarizing a stored proton beam by spin flip?

International Nuclear Information System (INIS)

Oellers, D.; Barion, L.; Barsov, S.; Bechstedt, U.; Benati, P.; Bertelli, S.; Chiladze, D.; Ciullo, G.; Contalbrigo, M.; Dalpiaz, P.F.; Dietrich, J.; Dolfus, N.; Dymov, S.; Engels, R.; Erven, W.; Garishvili, A.; Gebel, R.; Goslawski, P.

2009-01-01

We discuss polarizing a proton beam in a storage ring, either by selective removal or by spin flip of the stored ions. Prompted by recent, conflicting calculations, we have carried out a measurement of the spin-flip cross section in low-energy electron-proton scattering. The experiment uses the cooling electron beam at COSY as an electron target. The measured cross sections are too small for making spin flip a viable tool in polarizing a stored beam. This invalidates a recent proposal to use co-moving polarized positrons to polarize a stored antiproton beam.

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Energy Technology Data Exchange (ETDEWEB)

Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

2016-08-15

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Spin texture of Bi2Se3 thin films in the quantum tunneling limit.

Science.gov (United States)

Landolt, Gabriel; Schreyeck, Steffen; Eremeev, Sergey V; Slomski, Bartosz; Muff, Stefan; Osterwalder, Jürg; Chulkov, Evgueni V; Gould, Charles; Karczewski, Grzegorz; Brunner, Karl; Buhmann, Hartmut; Molenkamp, Laurens W; Dil, J Hugo

2014-02-07

By means of spin- and angle-resolved photoelectron spectroscopy we studied the spin structure of thin films of the topological insulator Bi2Se3 grown on InP(111). For thicknesses below six quintuple layers the spin-polarized metallic topological surface states interact with each other via quantum tunneling and a gap opens. Our measurements show that the resulting surface states can be described by massive Dirac cones which are split in a Rashba-like manner due to the substrate induced inversion asymmetry. The inner and the outer Rashba branches have distinct localization in the top and the bottom part of the film, whereas the band apices are delocalized throughout the entire film. Supported by calculations, our observations help in the understanding of the evolution of the surface states at the topological phase transition and provide the groundwork for the realization of two-dimensional spintronic devices based on topological semiconductors.

Electron spin resonance scanning tunneling microscope

International Nuclear Information System (INIS)

Guo Yang; Li Jianmei; Lu Xinghua

2015-01-01

It is highly expected that the future informatics will be based on the spins of individual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins; the quantum computer in the future can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this instrument and recent progresses are reviewed. The underlying mechanism is explored and summarized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented. (authors)

Spin-polarized hydrogen, deuterium, and tritium : I

International Nuclear Information System (INIS)

Haugen, M.; Ostgaard, E.

1989-01-01

The ground-state energy of spin-polarized hydrogen, deuterium and tritium is calculated by means of a modified variational lowest order constrained-variation method, and the calculations are done for five different two-body potentials. Spin-polarized H is not self-bound according to our theoretical results for the ground-state binding energy. For spin-polarized D, however, we obtain theoretical results for the ground-state binding energy per particle from -0.4 K at an equilibrium particle density of 0.25 σ -3 or a molar volume of 121 cm 3 /mol to +0.32 K at an equilibrium particle density of 0.21 σ -3 or a molar volume of 142 cm 3 /mol, where σ = 3.69 A (1A = 10 -10 m). It is, therefore, not clear whether spin-polarized deuterium should be self-bound or not. For spin-polarized T, we obtain theoretical results for the ground-state binding energy per particle from -4.73 K at an equilibrium particle density of 0.41 σ -3 or a molar volume of 74 cm 3 /mol to -1.21 K at an equilibrium particle density of 0.28 σ -3 or a molar volume of 109 cm 3 /mol. (Author) 27 refs., 9 figs., tab

Source of spin polarized electrons

International Nuclear Information System (INIS)

Pierce, D.T.; Meier, F.A.; Siegmann, H.C.

1976-01-01

A method is described of producing intense beams of polarized free electrons in which a semiconductor with a spin orbit split valence band and negative electron affinity is used as a photocathode and irradiated with circularly polarized light

Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

NARCIS (Netherlands)

Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

2015-01-01

A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the

Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes.

Science.gov (United States)

Rotjanapittayakul, Worasak; Pijitrojana, Wanchai; Archer, Thomas; Sanvito, Stefano; Prasongkit, Jariyanee

2018-03-19

Recently magnetic tunnel junctions using two-dimensional MoS 2 as nonmagnetic spacer have been fabricated, although their magnetoresistance has been reported to be quite low. This may be attributed to the use of permalloy electrodes, injecting current with a relatively small spin polarization. Here we evaluate the performance of MoS 2 -based tunnel junctions using Fe 3 Si Heusler alloy electrodes. Density functional theory and the non-equilibrium Green's function method are used to investigate the spin injection efficiency (SIE) and the magnetoresistance (MR) ratio as a function of the MoS 2 thickness. We find a maximum MR of ~300% with a SIE of about 80% for spacers comprising between 3 and 5 MoS 2 monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.

Spin-polarized fuel in ICF pellets

International Nuclear Information System (INIS)

Wakuta, Yoshihisa; Emoto, Nobuya; Nakao, Yasuyuki; Honda, Takuro; Honda, Yoshinori; Nakashima, Hideki.

1990-01-01

The use of parallel spin-polarized DT or D 3 He fuel increases the fusion cross-section by 50%. By implosion-burn simulation for inertially confined fusion (ICF) pellets of the spin-polarized fuels, we found that the input energy requirement could be reduced by nearly a fact of two. These pellets taken up here include large-high-aspect-ratio DT target proposed in ILE Osaka University and DT ignitor/D 3 He fuel pellet proposed by our group. We also found that the polarized state could survive during the implosion-burn phase. (author)

Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

Science.gov (United States)

Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

2012-11-01

Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

Manipulation of magnetic Skyrmions with a Scanning Tunneling Microscope

OpenAIRE

Wieser, R.

2016-01-01

The dynamics of a single magnetic Skyrmion in an atomic spin system under the influence of Scanning Tunneling Microscope is investigated by computer simulations solving the Landau-Lifshitz-Gilbert equation. Two possible scenarios are described: manipulation with aid of a spin-polarized tunneling current and by an electric field created by the scanning tunneling microscope. The dynamics during the creation and annihilation process is studied and the possibility to move single Skyrmions is showed.

Theory of inelastic electron tunneling from a localized spin in the impulsive approximation.

Science.gov (United States)

Persson, Mats

2009-07-31

A simple expression for the conductance steps in inelastic electron tunneling from spin excitations in a single magnetic atom adsorbed on a nonmagnetic metal surface is derived. The inelastic coupling between the tunneling electron and the spin is via the exchange coupling and is treated in an impulsive approximation using the Tersoff-Hamann approximation for the tunneling between the tip and the sample.

Continuous control of spin polarization using a magnetic field

Science.gov (United States)

Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y.

2016-05-01

The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

Continuous control of spin polarization using a magnetic field

International Nuclear Information System (INIS)

Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y.

2016-01-01

The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

Continuous control of spin polarization using a magnetic field

Energy Technology Data Exchange (ETDEWEB)

Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y., E-mail: tingyong.chen@asu.edu [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2016-05-23

The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

PREFACE: Spin Electronics

Science.gov (United States)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

Spin Transfer Torque in Graphene

Science.gov (United States)

Lin, Chia-Ching; Chen, Zhihong

2014-03-01

Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

Detecting Spin-Polarized Currents in Ballistic Nanostructures

DEFF Research Database (Denmark)

Potok, R.; Folk, J.; M. Marcus, C.

2002-01-01

We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact....

Widespread spin polarization effects in photoemission from topological insulators

Energy Technology Data Exchange (ETDEWEB)

Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.

2011-06-22

High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

Polarizing a stored proton beam by spin-flip?

International Nuclear Information System (INIS)

Oellers, Dieter Gerd Christian

2010-01-01

The present thesis discusses the extraction of the electron-proton spin-flip cross-section. The experimental setup, the data analysis and the results are pictured in detail. The proton is described by a QCD-based parton model. In leading twist three functions are needed. The quark distribution, the helicity distribution and the transversity distribution. While the first two are well-known, the transversity distribution is largely unknown. A self-sufficient measurement of the transversity is possible in double polarized proton-antiproton scattering. This rises the need of a polarized antiproton beam. So far spin filtering is the only tested method to produce a polarized proton beam, which may be capable to hold also for antiprotons. In-situ polarization build-up of a stored beam either by selective removal or by spin-flip of a spin-(1)/(2) beam is mathematically described. A high spin-flip cross-section would create an effective method to produce a polarized antiproton beam by polarized positrons. Prompted by conflicting calculations, a measurement of the spin-flip cross-section in low-energy electron-proton scattering was carried out. This experiment uses the electron beam of the electron cooler at COSY as an electron target. The depolarization of the stored proton beam is detected. An overview of the experiment is followed by detailed descriptions of the cycle setup, of the electron target and the ANKE silicon tracking telescopes acting as a beam polarimeter. Elastic protondeuteron scattering is the analyzing reaction. The event selection is depicted and the beam polarization is calculated. Upper limits of the two electron-proton spin-flip cross-sections σ parallel and σ perpendicular to are deduced using the likelihood method. (orig.)

An enhancement of spin polarization by multiphoton pumping in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-08-15

Highlights: {yields} Multiphoton pumping and spin generation in semiconductors. {yields} Optical selection rules for inter-band transitions. {yields} Calculations of spin polarization using band-energy model and the second order perturbation theory. {yields} Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

An enhancement of spin polarization by multiphoton pumping in semiconductors

International Nuclear Information System (INIS)

Miah, M. Idrish

2011-01-01

Highlights: → Multiphoton pumping and spin generation in semiconductors. → Optical selection rules for inter-band transitions. → Calculations of spin polarization using band-energy model and the second order perturbation theory. → Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

Polarized neutron inelastic scattering experiments on spin dynamics

International Nuclear Information System (INIS)

Kakurai, Kazuhisa

2016-01-01

The principles of polarized neutron scattering are introduced and examples of polarized neutron inelastic scattering experiments on spin dynamics investigation are presented. These examples should demonstrate the importance of the polarized neutron utilization for the investigation of non-trivial magnetic ground and excited states in frustrated and low dimensional quantum spin systems. (author)

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.; Chshiev, M.; Manchon, Aurelien

2015-01-01

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.

2015-02-11

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Radio frequency scanning tunneling spectroscopy for single-molecule spin resonance.

Science.gov (United States)

Müllegger, Stefan; Tebi, Stefano; Das, Amal K; Schöfberger, Wolfgang; Faschinger, Felix; Koch, Reinhold

2014-09-26

We probe nuclear and electron spins in a single molecule even beyond the electromagnetic dipole selection rules, at readily accessible magnetic fields (few mT) and temperatures (5 K) by resonant radio-frequency current from a scanning tunneling microscope. We achieve subnanometer spatial resolution combined with single-spin sensitivity, representing a 10 orders of magnitude improvement compared to existing magnetic resonance techniques. We demonstrate the successful resonant spectroscopy of the complete manifold of nuclear and electronic magnetic transitions of up to ΔI(z)=±3 and ΔJ(z)=±12 of single quantum spins in a single molecule. Our method of resonant radio-frequency scanning tunneling spectroscopy offers, atom-by-atom, unprecedented analytical power and spin control with an impact on diverse fields of nanoscience and nanotechnology.

Spin-isospin excitations studied by polarized beams

International Nuclear Information System (INIS)

Sakai, H.; Greenfield, M.B.; Hatanaka, K.

1996-01-01

The spin-parity J π of the spin dipole resonances (SDR) in 12 N and 12 B are investigated via the measurements of polarization observables, the transverse polarization transfer coefficient D NN for the (vector p, vector n) reaction at 197 and 295 MeV and the tensor analyzing power A xx for the (vector d, 2 He) reaction at 270 MeV. The polarization observables, D NN and A xx for the peak at 4.5 MeV are consistent with the DWIA prediction with 2 - but those for the peak at 7.5 MeV contradict the predictions with an expected J π =1 - . Neither polarization observables could detect any concentration of 0 - strength. The usefulness of these spin observables in identifying J π is shown. (orig.)

Quantum Tunneling of Magnetization in Single Molecular Magnets Coupled to Ferromagnetic Reservoirs

OpenAIRE

Misiorny, Maciej; Barnas, Józef

2006-01-01

The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization (QTM). The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction with tunneling electrons is shown to affect the spin reversal due to QTM. ...

Co on Pt(111) studied by spin-polarized scanning tunneling microscopy and spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Meier, F.K.

2006-07-01

In this thesis the electronic properties of the bare Pt(111) surface, the structural, electronic, and magnetic properties of monolayer and double-layer high Co nanostructures as well as the spin-averaged electronic structure of single Co atoms on Pt(111) were studied by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The experiments on the bare Pt(111) surface and on single Co atoms have been performed in an STM facility operating at temperatures of down to 0.3 K and at magnetic fields of up to 14 T under ultra-high vacuum conditions. The facility has been taken into operation within the time period of this thesis and its specifications were tested by STS measurements. These characterization measurements show a very high stability of the tunneling junction and an energy resolution of about 100 {mu}eV, which is close to the thermal limit. The investigation of the electronic structure of the bare Pt(111) surface reveals the existence of an unoccupied surface state. By a comparison of the measured dispersion to first-principles electronic structure calculations the state is assigned to an sp-derived surface band at the lower boundary of the projected bulk band gap. The surface state exhibits a strong spin-orbit coupling induced spin splitting. The close vicinity to the bulk bands leads to a strong linear contribution to the dispersion and thus to a deviant appearance in the density of states in comparison to the surface states of the (111) surfaces of noble metals. A detailed study of Co monolayer and double-layer nanostructures on the Pt(111) surface shows that both kinds of nanostructures exhibit a highly inhomogeneous electronic structure which changes at the scale of only a few Aa due to a strong stacking dependence with respect to the Pt(111) substrate. With the help of first principles calculations the different spectroscopic appearance for Co atoms within the Co monolayer is assigned to a stacking dependent hybridization of Co states

Spin Heat Accumulation Induced by Tunneling from a Ferromagnet

NARCIS (Netherlands)

Vera-Marun, I.J.; Wees, B.J. van; Jansen, R.

2014-01-01

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the

Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

Science.gov (United States)

Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

2017-09-01

In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

Efficient spin transitions in inelastic electron tunneling spectroscopy.

Science.gov (United States)

Lorente, Nicolás; Gauyacq, Jean-Pierre

2009-10-23

The excitation of the spin degrees of freedom of an adsorbed atom by tunneling electrons is computed using strong coupling theory. Recent measurements [Heinrich, Science 306, 466 (2004)] reveal that electron currents in a magnetic system efficiently excite its magnetic moments. Our theory shows that the incoming electron spin strongly couples with that of the adsorbate so that memory of the initial spin state is lost, leading to large excitation efficiencies. First-principles transmissions are evaluated in quantitative agreement with the experiment.

Rotatable spin-polarized electron source for inverse-photoemission experiments

International Nuclear Information System (INIS)

Stolwijk, S. D.; Wortelen, H.; Schmidt, A. B.; Donath, M.

2014-01-01

We present a ROtatable Spin-polarized Electron source (ROSE) for the use in spin- and angle-resolved inverse-photoemission (SR-IPE) experiments. A key feature of the ROSE is a variable direction of the transversal electron beam polarization. As a result, the inverse-photoemission experiment becomes sensitive to two orthogonal in-plane polarization directions, and, for nonnormal electron incidence, to the out-of-plane polarization component. We characterize the ROSE and test its performance on the basis of SR-IPE experiments. Measurements on magnetized Ni films on W(110) serve as a reference to demonstrate the variable spin sensitivity. Moreover, investigations of the unoccupied spin-dependent surface electronic structure of Tl/Si(111) highlight the capability to analyze complex phenomena like spin rotations in momentum space. Essentially, the ROSE opens the way to further studies on complex spin-dependent effects in the field of surface magnetism and spin-orbit interaction at surfaces

Polarizing a stored proton beam by spin-flip?

Energy Technology Data Exchange (ETDEWEB)

Oellers, Dieter Gerd Christian

2010-04-15

The present thesis discusses the extraction of the electron-proton spin-flip cross-section. The experimental setup, the data analysis and the results are pictured in detail. The proton is described by a QCD-based parton model. In leading twist three functions are needed. The quark distribution, the helicity distribution and the transversity distribution. While the first two are well-known, the transversity distribution is largely unknown. A self-sufficient measurement of the transversity is possible in double polarized proton-antiproton scattering. This rises the need of a polarized antiproton beam. So far spin filtering is the only tested method to produce a polarized proton beam, which may be capable to hold also for antiprotons. In-situ polarization build-up of a stored beam either by selective removal or by spin-flip of a spin-(1)/(2) beam is mathematically described. A high spin-flip cross-section would create an effective method to produce a polarized antiproton beam by polarized positrons. Prompted by conflicting calculations, a measurement of the spin-flip cross-section in low-energy electron-proton scattering was carried out. This experiment uses the electron beam of the electron cooler at COSY as an electron target. The depolarization of the stored proton beam is detected. An overview of the experiment is followed by detailed descriptions of the cycle setup, of the electron target and the ANKE silicon tracking telescopes acting as a beam polarimeter. Elastic protondeuteron scattering is the analyzing reaction. The event selection is depicted and the beam polarization is calculated. Upper limits of the two electron-proton spin-flip cross-sections {sigma} {sub parallel} and {sigma} {sub perpendicular} {sub to} are deduced using the likelihood method. (orig.)

Spin-frustrated V3 and Cu3 nanomagnets with Dzialoshinsky-Moriya exchange. 2. Spin structure, spin chirality and tunneling gaps

International Nuclear Information System (INIS)

Belinsky, Moisey I.

2009-01-01

The spin chirality and spin structure of the Cu 3 and V 3 nanomagnets with the Dzialoshinsky-Moriya (DM) exchange interaction are analyzed. The correlations between the vector κ and the scalar χ chirality are obtained. The DM interaction forms the spin chirality which is equal to zero in the Heisenberg clusters. The dependences of the spin chirality on magnetic field and deformations are calculated. The cluster distortions reduce the spin chirality. The vector chirality is reduced partially and the scalar chirality vanishes in the transverse magnetic field. In the isosceles clusters, the DM exchange and distortions determine the sign and degree of the spin chirality κ. The correlations between the chirality parameters κ n and the intensities of the EPR and INS transitions are obtained. The vector chirality κ n describes the spin chirality of the Cu 3 and V 3 nanomagnets, the scalar chirality describes the pseudoorbital moment of the DM cluster. It is shown that in the consideration of the DM exchange, the spin states DM mixing and tunneling gaps at level crossing fields depend on the coordinate system of the DM model. The calculations in the DM exchange models in the right-handed and left-handed frame show opposite magnetic behavior at the level crossing field and allow to explain the opposite schemes of the tunneling gaps and levels crossing, which have been obtained in different treatments. The results of the DM model in the right-handed frame are consistent with the results of the group-theoretical analysis, whereas the results in the left-handed frame are inconsistent with that. The correlations between the spin chirality of the ground state and tunneling gaps at the level crossing field are obtained for the equilateral and isosceles nanoclusters.

Spin-dependent tunneling conductance in 2D structures in zero magnetic field

International Nuclear Information System (INIS)

Rozhansky, I.V.; Averkiev, N.S.

2009-01-01

The influence of the spin-orbit interaction on the tunneling between two-dimensional electron layers is considered. A general expression for the tunneling current is obtained with the Rashba and Dresselhaus effects and also elastic scattering of charge carriers on impurities taken into account. It is shown that the particular form of the tunneling conductance as a function of the voltage between layers is extremely sensitive to the relationship between the Rashba and Dresselhaus parameters. This makes it possible to determine the parameters of the spin-orbit interaction and the quantum scattering time directly from measurements of the tunneling conductance in the absence of magnetic field

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

Spin-polarized spin-orbit-split quantum-well states in a metal film

Energy Technology Data Exchange (ETDEWEB)

Varykhalov, Andrei; Sanchez-Barriga, Jaime; Gudat, Wolfgang; Eberhardt, Wolfgang; Rader, Oliver [BESSY Berlin (Germany); Shikin, Alexander M. [St. Petersburg State University (Russian Federation)

2008-07-01

Elements with high atomic number Z lead to a large spin-orbit coupling. Such materials can be used to create spin-polarized electronic states without the presence of a ferromagnet or an external magnetic field if the solid exhibits an inversion asymmetry. We create large spin-orbit splittings using a tungsten crystal as substrate and break the structural inversion symmetry through deposition of a gold quantum film. Using spin- and angle-resolved photoelectron spectroscopy, it is demonstrated that quantum-well states forming in the gold film are spin-orbit split and spin polarized up to a thickness of at least 10 atomic layers. This is a considerable progress as compared to the current literature which reports spin-orbit split states at metal surfaces which are either pure or covered by at most a monoatomic layer of adsorbates.

Analytic expression for the giant fieldlike spin torque in spin-filter magnetic tunnel junctions

Science.gov (United States)

Tang, Y.-H.; Huang, Z.-W.; Huang, B.-H.

2017-08-01

We propose analytic expressions for fieldlike, T⊥, and spin-transfer, T∥, spin torque components in the spin-filter-based magnetic tunnel junction (SFMTJ), by using the single-band tight-binding model with the nonequilibrium Keldysh formalism. In consideration of multireflection processes between noncollinear magnetization of the spin-filter (SF) barrier and the ferromagnetic (FM) electrode, the central spin-selective SF barrier plays an active role in the striking discovery T⊥≫T∥ , which can be further identified by the unusual barrier thickness dependence of giant T⊥. Our general expressions reveal the sinusoidal angular dependence of both spin torque components, even in the presence of the SF barrier.

Laser-driven source of spin-polarized atomic hydrogen and deuterium

International Nuclear Information System (INIS)

Poelker, M.

1995-01-01

A laser-driven source of spin-polarized hydrogen (H) and deuterium (D) that relies on the technique of optical pumping spin exchange has been constructed. In this source, H or D atoms and potassium atoms flow continuously through a drifilm-coated spin-exchange cell where potassium atoms are optically pumped with circularly-polarized laser light in a high magnetic field. The H or D atoms become polarized through spin-exchange collisions with polarized potassium atoms. High electron polarization (∼80%) has been measured for H and D atoms at flow rates ∼2x10 17 atoms/s. Lower polarization values are measured for flow rates exceeding 1x10 18 atoms/s. In this paper, we describe the performance of the laser-driven source as a function of H and D atomic flow rate, magnetic field strength, alkali density and pump-laser power. Polarization measurements as a function of flow rate and magnetic field suggest that, despite a high magnetic field, atoms within the optical-pumping spin-exchange apparatus evolve to spin-temperature equilibrium which results in direct polarization of the H and D nuclei. (orig.)

Spin effects in the screening and Auger neutralization of He+ ions in a spin-polarized electron gas

International Nuclear Information System (INIS)

Alducin, M.; Diez Muino, R.; Juaristi, J.I.

2005-01-01

The screening of a He + ion embedded in a free electron gas is studied for different spin-polarizations of the medium. Density functional theory and the local spin density approximation are used to calculate the induced electronic density for each spin orientation, i.e. parallel or antiparallel to the spin of the electron bound to the ion. Since both the He + ion and the electron gas are spin-polarized, we analyze in detail the spin state of the screening cloud for the two different possibilities: the spin of the bound electron can be parallel to either the majority spin or the minority spin in the medium. Finally, the spin-dependent Kohn-Sham orbitals are used to calculate the Auger neutralization rate of the He + ion. The polarization of the Auger excited electron is influenced by the spin-polarization of the medium. The results are discussed in terms of the spin-dependent screening and the indistinguishability of electrons with the same spin state

Unique spin-polarized transmission effects in a QD ring structure

Science.gov (United States)

Hedin, Eric; Joe, Yong

2010-10-01

Spintronics is an emerging field in which the spin of the electron is used for switching purposes and to communicate information. In order to obtain spin-polarized electron transmission, the Zeeman effect is employed to produce spin-split energy states in quantum dots which are embedded in the arms of a mesoscopic Aharonov-Bohm (AB) ring heterostructure. The Zeeman splitting of the QD energy levels can be induced by a parallel magnetic field, or by a perpendicular field which also produces AB-effects. The combination of these effects on the transmission resonances of the structure is studied analytically and several parameter regimes are identified which produce a high degree of spin-polarized output. Contour and line plots of the weighted spin polarization as a function of electron energy and magnetic field are presented to visualize the degree of spin-polarization. Taking advantage of these unique parameter regimes shows the potential promise of such devices for producing spin-polarized currents.

Spin-polarized states in neutron matter in a strong magnetic field

International Nuclear Information System (INIS)

Isayev, A. A.; Yang, J.

2009-01-01

Spin-polarized states in neutron matter in strong magnetic fields up to 10 18 G are considered in the model with the Skyrme effective interaction. By analyzing the self-consistent equations at zero temperature, it is shown that a thermodynamically stable branch of solutions for the spin-polarization parameter as a function of density corresponds to the negative spin polarization when the majority of neutron spins are oriented opposite to the direction of the magnetic field. Besides, beginning from some threshold density dependent on magnetic field strength, the self-consistent equations also have two other branches of solutions for the spin-polarization parameter with the positive spin polarization. The free energy corresponding to one of these branches turns out to be very close to that of the thermodynamically preferable branch. As a consequence, in a strong magnetic field, the state with the positive spin polarization can be realized as a metastable state in the high-density region in neutron matter, which, under decreasing density, at some threshold density changes to a thermodynamically stable state with the negative spin polarization.

Spin Interactions and Cross-checks of Polarization in NH$_{3}$ Target

CERN Document Server

Kiselev, Yu; Doshita, N; Gautheron, F; Hess, Ch; Iwata, T; Koivuniemi, J; Kondo, K; Magnon, A; Mallot, G; Michigami, T; Meyer, W; Reicherz, G

2008-01-01

We study the magnetic structure of irradiated ammonia (NH$_{3}$) polarized by Dynamic Nuclear Polarization method at 0.2 K and at 2.5 T field. In this material, the electron spins, induced by ionizing radiation, couple $^{14}$N and $^{1}$H spins by the indirect spin-spin interaction. As a result, the local frequencies of $^{1}$H-spins are varied depending on $^{14}$N spin polarizations and lead to an asymmetry in the proton signal. This asymmetry allowes a good detection of $^{14}$N spins directly on the proton Larmor frequency. In the long COMPASS target at CERN, we use the cross-checks between spectral asymmetries and integral polarizations to decrease the relative error for longitudinal target polarizations up to $\\pm$2.0%.

Coupled spin and charge collective excitations in a spin polarized electron gas

International Nuclear Information System (INIS)

Marinescu, D.C.; Quinn, J.J.; Yi, K.S.

1997-01-01

The charge and longitudinal spin responses induced in a spin polarized quantum well by a weak electromagnetic field are investigated within the framework of the linear response theory. The authors evaluate the excitation frequencies for the intra- and inter-subband transitions of the collective charge and longitudinal spin density oscillations including many-body corrections beyond the random phase approximation through the spin dependent local field factors, G σ ± (q,ω). An equation-of-motion method was used to obtain these corrections in the limit of long wavelengths, and the results are given in terms of the equilibrium pair correlation function. The finite degree of spin polarization is shown to introduce coupling between the charge and spin density modes, in contrast with the result for an unpolarized system

Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

International Nuclear Information System (INIS)

Granovsky, A.B.; Inoue, Mitsuteru

2004-01-01

We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling

Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Granovsky, A.B. E-mail: granov@magn.ru; Inoue, Mitsuteru

2004-05-01

We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling.

A review on all-perovskite multiferroic tunnel junctions

Directory of Open Access Journals (Sweden)

Yuewei Yin

2017-12-01

Full Text Available Although the basic concept was proposed only about 10 years ago, multiferroic tunnel junctions (MFTJs with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interests, driven mainly by its potential applications in multi-level memories and electric field controlled spintronics. The purpose of this article is to review the recent progress of all-perovskite MFTJs. Starting from the key functional properties of the tunneling magnetoresistance, tunneling electroresistance, and tunneling electromagnetoresistance effects, we discuss the main origins of the tunneling electroresistance effect, recent progress in achieving multilevel resistance states in a single device, and the electrical control of spin polarization and transport through the ferroelectric polarization reversal of the tunneling barrier.

Magnetic x-ray circular dichroism in spin-polarized photoelectron diffraction

International Nuclear Information System (INIS)

Waddill, G.D.; Tobin, J.G.

1994-01-01

The first structural determination with spin-polarized, energy-dependent photoelectron diffraction using circularly-polarized x-rays is reported for Fe films on Cu(001). Circularly-polarized x-rays produced spin-polarized photoelectrons from the Fe 2p doublet, and intensity asymmetries in the 2p 3/2 level are observed. Fully spin-specific multiple scattering calculations reproduced the experimentally-determined energy and angular dependences. A new analytical procedure which focuses upon intensity variations due to spin-dependent diffraction is introduced. A sensitivity to local geometric and magnetic structure is demonstrated

Spin polarized semimagnetic exciton-polariton condensate in magnetic field.

Science.gov (United States)

Król, Mateusz; Mirek, Rafał; Lekenta, Katarzyna; Rousset, Jean-Guy; Stephan, Daniel; Nawrocki, Michał; Matuszewski, Michał; Szczytko, Jacek; Pacuski, Wojciech; Piętka, Barbara

2018-04-27

Owing to their integer spin, exciton-polaritons in microcavities can be used for observation of non-equilibrium Bose-Einstein condensation in solid state. However, spin-related phenomena of such condensates are difficult to explore due to the relatively small Zeeman effect of standard semiconductor microcavity systems and the strong tendency to sustain an equal population of two spin components, which precludes the observation of condensates with a well defined spin projection along the axis of the system. The enhancement of the Zeeman splitting can be achieved by introducing magnetic ions to the quantum wells, and consequently forming semimagnetic polaritons. In this system, increasing magnetic field can induce polariton condensation at constant excitation power. Here we evidence the spin polarization of a semimagnetic polaritons condensate exhibiting a circularly polarized emission over 95% even in a moderate magnetic field of about 3 T. Furthermore, we show that unlike nonmagnetic polaritons, an increase on excitation power results in an increase of the semimagnetic polaritons condensate spin polarization. These properties open new possibilities for testing theoretically predicted phenomena of spin polarized condensate.

Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

Science.gov (United States)

Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

2013-08-27

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

International Nuclear Information System (INIS)

Aurelio, D.; Torres, L.; Finocchio, G.

2009-01-01

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

Ballistic spin filtering across the ferromagnetic-semiconductor interface

Directory of Open Access Journals (Sweden)

Y.H. Li

2012-03-01

Full Text Available The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future.

Polarized (3) He Spin Filters for Slow Neutron Physics.

Science.gov (United States)

Gentile, T R; Chen, W C; Jones, G L; Babcock, E; Walker, T G

2005-01-01

Polarized (3)He spin filters are needed for a variety of experiments with slow neutrons. Their demonstrated utility for highly accurate determination of neutron polarization are critical to the next generation of betadecay correlation coefficient measurements. In addition, they are broadband devices that can polarize large area and high divergence neutron beams with little gamma-ray background, and allow for an additional spin-flip for systematic tests. These attributes are relevant to all neutron sources, but are particularly well-matched to time of flight analysis at spallation sources. There are several issues in the practical use of (3)He spin filters for slow neutron physics. Besides the essential goal of maximizing the (3)He polarization, we also seek to decrease the constraints on cell lifetimes and magnetic field homogeneity. In addition, cells with highly uniform gas thickness are required to produce the spatially uniform neutron polarization needed for beta-decay correlation coefficient experiments. We are currently employing spin-exchange (SE) and metastability-exchange (ME) optical pumping to polarize (3)He, but will focus on SE. We will discuss the recent demonstration of 75 % (3)He polarization, temperature-dependent relaxation mechanism of unknown origin, cell development, spectrally narrowed lasers, and hybrid spin-exchange optical pumping.

Resonant optical tunneling-induced enhancement of the photonic spin Hall effect

Science.gov (United States)

Jiang, Xing; Wang, Qingkai; Guo, Jun; Zhang, Jin; Chen, Shuqing; Dai, Xiaoyu; Xiang, Yuanjiang

2018-04-01

Due to the quantum analogy with optics, the resonant optical tunneling effect (ROTE) has been proposed to investigate both the fundamental physics and the practical applications of optical switches and liquid refractive index sensors. In this paper, the ROTE is used to enhance the spin Hall effect (SHE) of transmitted light. It is demonstrated that sandwiching a layer of a high-refractive-index medium (boron nitride crystal) between two low-refractive-index layers (silica) can effectively enhance the photonic SHE due to the increased refractive index gradient and an enhanced evanescent field near the interface between silica and boron nitride. A maximum transverse shift of the horizontal polarization state in the ROTE structure of about 22.25 µm has been obtained, which is at least three orders of magnitude greater than the transverse shift in the frustrated total internal reflection structure. Moreover, the SHE can be manipulated by controlling the component materials and the thickness of the ROTE structure. These findings open the possibility for future applications of photonic SHE in precision metrology and spin-based photonics.

Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

Science.gov (United States)

Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

2017-11-01

The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

Science.gov (United States)

Wu, Zhenhua; Luo, Kun; Yu, Jiahan; Wu, Xiaobo; Lin, Liangzhong

2018-02-01

Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

Peculiarities of spin polarization inversion at a thiophene/cobalt interface

KAUST Repository

Wang, Xuhui

2013-03-20

We perform ab initio calculations to investigate the spin polarization at the interface between a thiophene molecule and cobalt substrate. We find that the reduced symmetry in the presence of a sulfur atom (in the thiophene molecule) leads to a strong spatial dependence of the spin polarization of the molecule. The two carbon atoms far from the sulfur acquire a polarization opposite to that of the substrate, while the carbon atoms bonded directly to sulfur possess the same polarization as the substrate. We determine the origin of this peculiar spin interface property as well as its impact on the spin transport.

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

Science.gov (United States)

Sattari, Farhad; Mirershadi, Soghra

2018-01-01

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin-orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.

Stimulated polarization wave process in spin 3/2 chains

International Nuclear Information System (INIS)

Furman, G. B.

2007-01-01

Stimulated wave of polarization, triggered by a flip of a single spin, presents a simple model of quantum amplification. Recently, it has been demonstrated that, in an idealized one-dimensional Ising spin 1/2 chain with nearest-neighbor interactions and realistic spin 1/2 chain including the natural dipole-dipole interactions, irradiated by a weak resonant transverse field, a wave of flipped spins can be triggered by a single spin flip. Here we focuse on control of polarization wave in chain of spin 3/2, where the nuclear quadrupole interaction is dominant. Results of simulations for 1D spin chains and rings with up to five spins are presented.

Organic light emitting diodes with spin polarized electrodes

NARCIS (Netherlands)

Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

2003-01-01

Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

Tuning Interfacial States Using Organic Molecules as Spin Filters

Science.gov (United States)

Deloach, Andrew; Wang, Jingying; Papa, Christopher M.; Myahkostupov, Mykhaylo; Castellano, Felix N.; Dougherty, Daniel B.; Jiang, Wei; Liu, Feng

Organic semiconductors are known to have long spin relaxation times which makes them a good candidate for spintronics. However, an issue with these materials is that at metal-organic interfaces there is a conductivity mismatch problem that suppresses spin injection. To overcome this, orbital mixing at the interface can be tuned with an organic spacer layer to promote the formation of spin polarized interface states. These states act as a ``spin filters'' and have been proposed as an explanation for the large tunneling magnetoresistance seen in devices using tris-(8-hydroxyquinolate)-aluminum(Alq3). Here, we show that the spin polarized interface states can be tuned from metallic to resistive by subtle changes in molecular orbitals. This is done using spin polarized scanning tunneling microscopy with three different tris-(8-hydroxyquinolate) compounds: aluminum, chromium, and iron. Differences in d-orbital mixing results in different mechanisms of interfacial coupling, giving rise to metallic or resistive interface states. Supported by the U.S. DoE award No. DE-SC0010324.

Wind tunneling testing and analysis relating to the spinning of light aircraft

Science.gov (United States)

Mccormick, B. W.; Zilliac, G. G.; Ballin, M. G.

1984-01-01

Included is a summary of two studies related to the spinning of light aircraft. The first study was conducted to demonstrate that the aerodynamic forces and moments acting on a tail of a spinning aircraft can be obtained from static wind-tunnel tests. The second study analytically investigated spinning using a high angle-of-attack aerodynamic model derived from a static wind-tunnel data base. The validity of the aerodynamic model is shown by comparisons with rotary-balance data and forced-oscillation tests. The results of a six-degree-of-freedom analysis show that the dynamics and aerodynamics of the steep- and flat-spin modes of a modified Yankee have been properly modeled.

Neutron beam effects on spin-exchange-polarized 3He.

Science.gov (United States)

Sharma, M; Babcock, E; Andersen, K H; Barrón-Palos, L; Becker, M; Boag, S; Chen, W C; Chupp, T E; Danagoulian, A; Gentile, T R; Klein, A; Penttila, S; Petoukhov, A; Soldner, T; Tardiff, E R; Walker, T G; Wilburn, W S

2008-08-22

We have observed depolarization effects when high intensity cold neutron beams are incident on alkali-metal spin-exchange-polarized 3He cells used as neutron spin filters. This was first observed as a reduction of the maximum attainable 3He polarization and was attributed to a decrease of alkali-metal polarization, which led us to directly measure alkali-metal polarization and spin relaxation over a range of neutron fluxes at Los Alamos Neutron Science Center and Institute Laue-Langevin. The data reveal a new alkali-metal spin-relaxation mechanism that approximately scales as sqrt[phi_{n}], where phi_{n} is the neutron capture-flux density incident on the cell. This is consistent with an effect proportional to the concentration of electron-ion pairs but is much larger than expected from earlier work.

Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor

Science.gov (United States)

Kinoshita, Yuto; Kida, Noriaki; Miyamoto, Tatsuya; Kanou, Manabu; Sasagawa, Takao; Okamoto, Hiroshi

2018-04-01

The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the subpicosecond timescale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.

Collective effects in spin polarized plasmas

International Nuclear Information System (INIS)

Coppi, B.; Cowley, S.; Detragiache, P.; Kulsrud, R.; Pegoraro, F.

1984-10-01

A fusing plasma with coherently polarized spin nuclei can be subject to instabilities due to the anisotropy of the reaction product distributions in velocity space, which is a result of their polarization. The characteristics of these instabilities depend strongly on the plasma spatial inhomogeneities and a significant rate of spin depolarization can be produced by them if adequate fluctuation amplitudes are reached. The results of the relevant analysis are, in addition, of interest for plasma heating processes with frequencies in the range of the cyclotron frequencies of the considered nuclei

Magnetoresistance through spin-polarized p states

International Nuclear Information System (INIS)

Papanikolaou, Nikos

2003-01-01

We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Higher spins tunneling from a time dependent and spherically symmetric black hole

International Nuclear Information System (INIS)

Siahaan, Haryanto M.

2016-01-01

The discussions of Hawking radiation via tunneling method have been performed extensively in the case of scalar particles. Moreover, there are also several works in discussing the tunneling method for Hawking radiation by using higher spins, e.g. neutrino, photon, and gravitino, in the background of static black holes. Interestingly, it is found that the Hawking temperature for static black holes using the higher spins particles has no difference compared to the one computed using scalars. In this paper, we study the Hawking radiation for a spherically symmetric and time dependent black holes using the tunneling of Dirac particles, photon, and gravitino. We find that the obtained Hawking temperature is similar to the one derived in the tunneling method by using scalars. (orig.)

Higher spins tunneling from a time dependent and spherically symmetric black hole

Energy Technology Data Exchange (ETDEWEB)

Siahaan, Haryanto M. [Parahyangan Catholic University, Physics Department, Bandung (Indonesia)

2016-03-15

The discussions of Hawking radiation via tunneling method have been performed extensively in the case of scalar particles. Moreover, there are also several works in discussing the tunneling method for Hawking radiation by using higher spins, e.g. neutrino, photon, and gravitino, in the background of static black holes. Interestingly, it is found that the Hawking temperature for static black holes using the higher spins particles has no difference compared to the one computed using scalars. In this paper, we study the Hawking radiation for a spherically symmetric and time dependent black holes using the tunneling of Dirac particles, photon, and gravitino. We find that the obtained Hawking temperature is similar to the one derived in the tunneling method by using scalars. (orig.)

Mechanical design of a rotary balance system for NASA. Langley Research Center's vertical spin tunnel

Science.gov (United States)

Allred, J. W.; Fleck, V. J.

1992-01-01

A new lightweight Rotary Balance System is presently being fabricated and installed as part of a major upgrade to the existing 20 Foot Vertical Spin Tunnel. This upgrade to improve model testing productivity of the only free spinning vertical wind tunnel includes a modern fan/drive and tunnel control system, an updated video recording system, and the new rotary balance system. The rotary balance is a mechanical apparatus which enables the measurement of aerodynamic force and moment data under spinning conditions (100 rpm). This data is used in spin analysis and is vital to the implementation of large amplitude maneuvering simulations required for all new high performance aircraft. The new rotary balance system described in this report will permit greater test efficiency and improved data accuracy. Rotary Balance testing with the model enclosed in a tare bag can also be performed to obtain resulting model forces from the spinning operation. The rotary balance system will be stored against the tunnel sidewall during free flight model testing.

Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin Chains

Science.gov (United States)

Rolf-Pissarczyk, Steffen; Yan, Shichao; Malavolti, Luigi; Burgess, Jacob A. J.; McMurtrie, Gregory; Loth, Sebastian

2017-11-01

We present the appearance of negative differential resistance (NDR) in spin-dependent electron transport through a few-atom spin chain. A chain of three antiferromagnetically coupled Fe atoms (Fe trimer) was positioned on a Cu2 N /Cu (100 ) surface and contacted with the spin-polarized tip of a scanning tunneling microscope, thus coupling the Fe trimer to one nonmagnetic and one magnetic lead. Pronounced NDR appears at the low bias of 7 mV, where inelastic electron tunneling dynamically locks the atomic spin in a long-lived excited state. This causes a rapid increase of the magnetoresistance between the spin-polarized tip and Fe trimer and quenches elastic tunneling. By varying the coupling strength between the tip and Fe trimer, we find that in this transport regime the dynamic locking of the Fe trimer competes with magnetic exchange interaction, which statically forces the Fe trimer into its high-magnetoresistance state and removes the NDR.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Xing, Huili; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

2015-10-19

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

International Nuclear Information System (INIS)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick; Xing, Huili; Jena, Debdeep

2015-01-01

By the insertion of thin In x Ga 1−x N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors

Dual descriptors within the framework of spin-polarized density functional theory.

Science.gov (United States)

Chamorro, E; Pérez, P; Duque, M; De Proft, F; Geerlings, P

2008-08-14

Spin-polarized density functional theory (SP-DFT) allows both the analysis of charge-transfer (e.g., electrophilic and nucleophilic reactivity) and of spin-polarization processes (e.g., photophysical changes arising from electron transitions). In analogy with the dual descriptor introduced by Morell et al. [J. Phys. Chem. A 109, 205 (2005)], we introduce new dual descriptors intended to simultaneously give information of the molecular regions where the spin-polarization process linking states of different multiplicity will drive electron density and spin density changes. The electronic charge and spin rearrangement in the spin forbidden radiative transitions S(0)-->T(n,pi(*)) and S(0)-->T(pi,pi(*)) in formaldehyde and ethylene, respectively, have been used as benchmark examples illustrating the usefulness of the new spin-polarization dual descriptors. These quantities indicate those regions where spin-orbit coupling effects are at work in such processes. Additionally, the qualitative relationship between the topology of the spin-polarization dual descriptors and the vertical singlet triplet energy gap in simple substituted carbene series has been also discussed. It is shown that the electron density and spin density rearrangements arise in agreement with spectroscopic experimental evidence and other theoretical results on the selected target systems.

Quantum dot spin-V(E)CSELs: polarization switching and periodic oscillations

Science.gov (United States)

Li, Nianqiang; Alexandropoulos, Dimitris; Susanto, Hadi; Henning, Ian; Adams, Michael

2017-09-01

Spin-polarized vertical (external) cavity surface-emitting lasers [Spin-V(E)CSELs] using quantum dot (QD) material for the active region, can display polarization switching between the right- and left-circularly polarized fields via control of the pump polarization. In particular, our previous experimental results have shown that the output polarization ellipticity of the spin-V(E)CSEL emission can exhibit either the same handedness as that of the pump polarization or the opposite, depending on the experimental operating conditions. In this contribution, we use a modified version of the spin-flip model in conjunction with combined time-independent stability analysis and direct time integration. With two representative sets of parameters our simulation results show good agreement with experimental observations. In addition periodic oscillations provide further insight into the dynamic properties of spin-V(E)CSELs.

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)

2016-07-14

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

KAUST Repository

Li, Peng

2016-06-01

In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

Science.gov (United States)

Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

2018-01-01

We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.

Electric-field-controlled spin reversal in a quantum dot with ferromagnetic contacts

Science.gov (United States)

Hauptmann, J. R.; Paaske, J.; Lindelof, P. E.

2008-05-01

Manipulation of the spin states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin filters, spin transistors and single spin memories as well as for solid-state qubits. An electrically gated quantum dot in the Coulomb blockade regime can be tuned to hold a single unpaired spin-1/2, which is routinely spin polarized by an applied magnetic field. Using ferromagnetic electrodes, however, the quantum dot becomes spin polarized by the local exchange field. Here, we report on the experimental realization of this tunnelling-induced spin splitting in a carbon-nanotube quantum dot coupled to ferromagnetic nickel electrodes with a strong tunnel coupling ensuring a sizeable exchange field. As charge transport in this regime is dominated by the Kondo effect, we can use this sharp many-body resonance to read off the local spin polarization from the measured bias spectroscopy. We demonstrate that the exchange field can be compensated by an external magnetic field, thus restoring a zero-bias Kondo resonance, and we demonstrate that the exchange field itself, and hence the local spin polarization, can be tuned and reversed merely by tuning the gate voltage.

Nuclear spin polarization of targets

International Nuclear Information System (INIS)

Happer, W.

1990-01-01

Lasers can be used to produce milligrams to grams of noble gas nuclei with spin polarizations in excess of 50%. These quantities are sufficient to be very useful targets in nuclear physics experiments. Alkali-metal atoms are used to capture the angular momentum of circularly polarized laser photons, and the alkali-metal atoms transfer their angular momentum to noble gas atoms in binary or three-body collisions. Non-radiative collisions between the excited alkali atoms and molecular quenching gases are essential to avoid radiation trapping. The spin exchange can involve gas-phase van der Waals molecules, consisting of a noble gas atom and an alkali metal atom. Surface chemistry is also of great importance in determining the wall-induced relaxation rates of the noble gases

Double Rashba Quantum Dots Ring as a Spin Filter

Directory of Open Access Journals (Sweden)

Chi Feng

2008-01-01

Full Text Available AbstractWe theoretically propose a double quantum dots (QDs ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling, which arises from a constant magnetic field applied on the tunneling junction between the QDs, a 100% spin-polarized conductance can be obtained. We show that both the spin orientations and the magnitude of it can be controlled by adjusting the above-mentioned parameters. The spin filtering effect is robust even in the presence of strong intra-dot Coulomb interactions and arbitrary dot-lead coupling configurations.

Spin tunneling in magnetic molecules

Science.gov (United States)

Kececioglu, Ersin

In this thesis, we will focus on spin tunneling in a family of systems called magnetic molecules such as Fe8 and Mn12. This is comparatively new, in relation to other tunneling problems. Many issues are not completely solved and/or understood yet. The magnetic molecule Fe 8 has been observed to have a rich pattern of degeneracies in its magnetic spectrum. We focus on these degeneracies from several points of view. We start with the simplest anisotropy Hamiltonian to describe the Fe 8 molecule and extend our discussion to include higher order anisotropy terms. We give analytical expressions as much as we can, for the degeneracies in the semi-classical limit in both cases. We reintroduce jump instantons to the instanton formalism. Finally, we discuss the effect of the environment on the molecule. Our results, for all different models and techniques, agree well with both experimental and numerical results.

Spin-locking and cross-polarization under magic-angle spinning of uniformly labeled solids.

Science.gov (United States)

Hung, Ivan; Gan, Zhehong

2015-07-01

Spin-locking and cross-polarization under magic-angle spinning are investigated for uniformly (13)C and (15)N labeled solids. In particular, the interferences from chemical shift anisotropy, and (1)H heteronuclear and (13)C homonuclear dipolar couplings are identified. The physical origin of these interferences provides guidelines for selecting the best (13)C and (15)N polarization transfer rf fields. Optimal settings for both the zero- and double-quantum cross-polarization transfer mechanisms are recommended. Copyright © 2015 Elsevier Inc. All rights reserved.

Spin-flipping a stored polarized proton beam with an rf dipole

International Nuclear Information System (INIS)

Blinov, B.B.; Derbenev, Ya.S.; Kageya, T.; Kantsyrev, D.Yu.; Krisch, A.D.; Morozov, V.S.; Sivers, D.W.; Wong, V.K.; Anferov, V.A.; Schwandt, P.; Przewoski, B. von

2000-01-01

Frequent polarization reversals, or spin-flips, of a stored polarized high-energy beam may greatly reduce systematic errors of spin asymmetry measurements in a scattering asymmetry experiment. We studied the spin-flipping of a 120 MeV horizontally-polarized proton beam stored in the IUCF Cooler Ring by ramping an rf-dipole magnet's frequency through an rf-induced depolarizing resonance in the presence of a nearly-full Siberian snake. After optimizing the frequency ramp parameters, we used multiple spin-flips to measure a spin-flip efficiency of 86.5±0.5%. The spin-flip efficiency was apparently limited by the rf-dipole's field strength. This result indicates that an efficient spin-flipping a stored polarized beam should be possible in high energy rings such as RHIC and HERA where Siberian snakes are certainly needed and only dipole rf-flipper-magnets are practical

Comments on spin operators and spin-polarization states of 2+1 fermions

Energy Technology Data Exchange (ETDEWEB)

Gavrilov, S.P.; Tomazelli, J.L. [Departamento Fisica e Quimica, UNESP, Campus de Guaratingueta (Brazil); Gitman, D.M. [Universidade de Sao Paulo, Instituto de Fisica, Caixa Postal 66318-CEP, Sao Paulo, S.P. (Brazil)

2005-02-01

In this brief article we discuss spin-polarization operators and spin-polarization states of 2+1 massive Dirac fermions and find a convenient representation by the help of 4-spinors for their description. We stress that in particular the use of such a representation allows us to introduce the conserved covariant spin operator in the 2+1 field theory. Another advantage of this representation is related to the pseudoclassical limit of the theory. Indeed, quantization of the pseudoclassical model of a spinning particle in 2+1 dimensions leads to the 4-spinor representation as the adequate realization of the operator algebra, where the corresponding operator of a first-class constraint, which cannot be gauged out by imposing the gauge condition, is just the covariant operator previously introduced in the quantum theory. (orig.)

Quantum tunneling of magnetization in single molecular magnets coupled to ferromagnetic reservoirs

Science.gov (United States)

Misiorny, M.; Barnas, J.

2007-04-01

The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization. The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction of SMM and electrons in the leads is shown to affect the spin reversal due to quantum tunneling of magnetization. It is shown that the switching is associated with transfer of a certain charge between the leads.

Edge-state-dependent tunneling of dipole-exchange spin waves in submicrometer magnetic strips with an air gap.

Science.gov (United States)

Xing, X J; Zhang, D; Li, S W

2012-12-14

We have investigated the tunneling of dipole-exchange spin waves across an air gap in submicrometer-sized permalloy magnetic strips by means of micromagnetic simulations. The magnetizations beside the gap could form three distinct end-domain states with various strengths of dipolar coupling. Spin-wave tunneling through the gap at individual end-domain states is studied. It is found that the tunneling behavior is strongly dependent on these domain states. Nonmonotonic decay of transmission of spin waves with the increase of the gap width is observed. The underlying mechanism for these behaviors is proposed. The tunneling characteristics of the dipole-exchange spin waves differ essentially from those of the magnetostatic ones reported previously.

Quantum revivals and magnetization tunneling in effective spin systems

International Nuclear Information System (INIS)

Krizanac, M; Altwein, D; Vedmedenko, E Y; Wiesendanger, R

2016-01-01

Quantum mechanical objects or nano-objects have been proposed as bits for information storage. While time-averaged properties of magnetic, quantum-mechanical particles have been extensively studied experimentally and theoretically, experimental investigations of the real time evolution of magnetization in the quantum regime were not possible until recent developments in pump–probe techniques. Here we investigate the quantum dynamics of effective spin systems by means of analytical and numerical treatments. Particular attention is paid to the quantum revival time and its relation to the magnetization tunneling. The quantum revival time has been initially defined as the recurrence time of a total wave-function. Here we show that the quantum revivals of wave-functions and expectation values in spin systems may be quite different which gives rise to a more sophisticated definition of the quantum revival within the realm of experimental research. Particularly, the revival times for integer spins coincide which is not the case for half-integer spins. Furthermore, the quantum revival is found to be shortest for integer ratios between the on-site anisotropy and an external magnetic field paving the way to novel methods of anisotropy measurements. We show that the quantum tunneling of magnetization at avoided level crossing is coherent to the quantum revival time of expectation values, leading to a connection between these two fundamental properties of quantum mechanical spins. (paper)

Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

Core Technology Development of Nuclear spin polarization

International Nuclear Information System (INIS)

Yoo, Byung Duk; Gwon, Sung Ok; Kwon, Duck Hee; Lee, Sung Man

2009-12-01

In order to study nuclear spin polarization, we need several core technologies such as laser beam source to polarize the nuclear spin, low pressured helium cell development whose surface is essential to maintain polarization otherwise most of the polarized helium relaxed in short time, development of uniform magnetic field system which is essential for reducing relaxation, efficient vacuum system, development of polarization measuring system, and development of pressure raising system about 1000 times. The purpose of this study is to develop resonable power of laser system, that is at least 5 watt, 1083 nm, 4GHz tuneable. But the limitation of this research fund enforce to develop amplifying system into 5 watt with 1 watt system utilizing laser-diod which is already we have in stock. We succeeded in getting excellent specification of fiber laser system with power of 5 watts, 2 GHz linewidth, more than 80 GHz tuneable

Reversible spin texture in ferroelectric Hf O2

Science.gov (United States)

Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

2017-06-01

Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

Spin Polarization Oscillations without Spin Precession: Spin-Orbit Entangled Resonances in Quasi-One-Dimensional Spin Transport

Directory of Open Access Journals (Sweden)

D. H. Berman

2014-03-01

Full Text Available Resonant behavior involving spin-orbit entangled states occurs for spin transport along a narrow channel defined in a two-dimensional electron gas, including an apparent rapid relaxation of the spin polarization for special values of the channel width and applied magnetic field (so-called ballistic spin resonance. A fully quantum-mechanical theory for transport using multiple subbands of the one-dimensional system provides the dependence of the spin density on the applied magnetic field and channel width and position along the channel. We show how the spatially nonoscillating part of the spin density vanishes when the Zeeman energy matches the subband energy splittings. The resonance phenomenon persists in the presence of disorder.

Influence of External Magnetic Fields on Tunneling of Spin-1 Bose Condensate

International Nuclear Information System (INIS)

Yu Zhaoxian; Jiao Zhiyong; Sun Jinzuo

2005-01-01

In this letter, we have studied the influence of the external magnetic fields on tunneling of the spin-1 Bose condensate. We find that the population transfer between spin-0 and spin-±1 exhibits the step structure under the external cosinusoidal magnetic field and a combination of static and cosinusoidal one, respectively. Compared with the longitudinal component of the external magnetic field, the smaller the transverse component of the magnetic field is, the larger the time scale of exhibiting the step structure does. The tunneling current may exhibit periodically oscillation behavior when the ratio of the transverse component of the magnetic field is smaller than that of the longitudinal component, otherwise it exhibits a damply oscillating behavior. This means that the dynamical spin localization can be adjusted by the external magnetic fields.

Intense source of spin-polarized electrons using laser-induced optical pumping

International Nuclear Information System (INIS)

Gray, L.G.; Giberson, K.W.; Cheng, C.; Keiffer, R.S.; Dunning, F.B.; Walters, G.K.

1983-01-01

A source of spin-polarized electrons based on a laser-pumped flowing helium afterglow is described. He(2 3 S) atoms contained in the afterglow are optically pumped using circularly polarized 1.08-μm (2 3 S→2 3 P) radiation provided by a NaF (F 2+ )( color-center laser. Spin angular momentum conservation in subsequent chemi-ionization reactions with CO 2 produces polarized electrons that are extracted from the afterglow. At low currents, < or approx. =1 μA, polarizations of approx.70%--80% are achieved. At higher currents the polarization decreases, falling to approx.40% at 50 μA. The spin polarization can be simply reversed (P→-P) and the source is suitable for use in the majority of low-energy spin-dependent scattering experiments proposed to date

Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

Science.gov (United States)

He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

2013-10-07

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

Polarization of nuclear spins by a cold nanoscale resonator

International Nuclear Information System (INIS)

Butler, Mark C.; Weitekamp, Daniel P.

2011-01-01

A cold nanoscale resonator coupled to a system of nuclear spins can induce spin relaxation. In the low-temperature limit where spin-lattice interactions are ''frozen out,'' spontaneous emission by nuclear spins into a resonant mechanical mode can become the dominant mechanism for cooling the spins to thermal equilibrium with their environment. We provide a theoretical framework for the study of resonator-induced cooling of nuclear spins in this low-temperature regime. Relaxation equations are derived from first principles, in the limit where energy donated by the spins to the resonator is quickly dissipated into the cold bath that damps it. A physical interpretation of the processes contributing to spin polarization is given. For a system of spins that have identical couplings to the resonator, the interaction Hamiltonian conserves spin angular momentum, and the resonator cannot relax the spins to thermal equilibrium unless this symmetry is broken by the spin Hamiltonian. The mechanism by which such a spin system becomes ''trapped'' away from thermal equilibrium can be visualized using a semiclassical model, which shows how an indirect spin-spin interaction arises from the coupling of multiple spins to one resonator. The internal spin Hamiltonian can affect the polarization process in two ways: (1) By modifying the structure of the spin-spin correlations in the energy eigenstates, and (2) by splitting the degeneracy within a manifold of energy eigenstates, so that zero-frequency off-diagonal terms in the density matrix are converted to oscillating coherences. Shifting the frequencies of these coherences sufficiently far from zero suppresses the development of resonator-induced correlations within the manifold during polarization from a totally disordered state. Modification of the spin-spin correlations by means of either mechanism affects the strength of the fluctuating spin dipole that drives the resonator. In the case where product states can be chosen as energy

Spin-orbit-induced spin splittings in polar transition metal dichalcogenide monolayers

KAUST Repository

Cheng, Yingchun

2013-06-01

The Rashba effect in quasi two-dimensional materials, such as noble metal surfaces and semiconductor heterostructures, has been investigated extensively, while interest in real two-dimensional systems has just emerged with the discovery of graphene. We present ab initio electronic structure, phonon, and molecular-dynamics calculations to study the structural stability and spin-orbit-induced spin splitting in the transition metal dichalcogenide monolayers MXY (M = Mo, W and X, Y = S, Se, Te). In contrast to the non-polar systems with X = Y, in the polar systems with X ≠ Y the Rashba splitting at the Γ-point for the uppermost valence band is caused by the broken mirror symmetry. An enhancement of the splitting can be achieved by increasing the spin-orbit coupling and/or the potential gradient. © Copyright EPLA, 2013.

Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

Science.gov (United States)

Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.

2018-06-01

The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

KAUST Repository

Zhang, Kun; Cao, Yan-ling; Fang, Yue-wen; Li, Qiang; Zhang, Jie; Duan, Chun-gang; Yan, Shi-shen; Tian, Yu-feng; Huang, Rong; Zheng, Rong-kun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo

2015-01-01

, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/Co

Spin-dependent transport through interacting graphene armchair nanoribbons

International Nuclear Information System (INIS)

Koller, Sonja; Mayrhofer, Leonhard; Grifoni, Milena

2010-01-01

We investigate spin effects in transport across fully interacting, finite-size graphene armchair nanoribbons (ACNs) contacted to collinearly spin-polarized leads. In such systems, the presence of short-range Coulomb interaction between bulk states and states localized at the ribbon ends leads to novel spin-dependent phenomena. Specifically, the total spin of the low-energy many-body states is conserved during tunneling but that of the bulk and end states is not. As a consequence, in the single-electron regime, dominated by Coulomb blockade phenomena, we find pronounced negative differential conductance features for ACNs contacted to parallel polarized leads. These features are, however, absent in an anti-parallel contact configuration, which in turn leads, within a certain gate and bias voltage region, to a negative tunneling magneto-resistance. Moreover, we analyze the changes in the transport characteristics under the influence of an external magnetic field.

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

Science.gov (United States)

Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

2015-01-01

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

Investigation of spin-polarized transport in GaAs nanostructures

Energy Technology Data Exchange (ETDEWEB)

Tierney, B D; Day, T E; Goodnick, S M [Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University, Tempe, AZ 85287-5706 (United States)], E-mail: brian.tierney@asu.edu

2008-03-15

A spin field effect transistor (spin-FET) has been fabricated that employs nanomagnets as components of quantum point contact (QPC) structures to inject spin-polarized carriers into the high-mobility two-dimensional electron gas (2DEG) of a GaAs quantum well and to detect them. A centrally-placed non-magnetic Rashba gate controls both the density of electrons in the 2DEG and the electronic spin precession. Initial results are presented for comparable device structures modeled with an ensemble Monte Carlo (EMC) method. In the EMC the temporal and spatial evolution of the ensemble carrier spin polarization is governed by a spin density matrix formalism that incorporates the Dresselhaus and Rashba contributions to the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures from 77-300K.

SPIN EFFECTS IN THE FRAGMENTATION OF TRANSVERSELY POLARIZED AND UNPOLARIZED QUARKS

International Nuclear Information System (INIS)

ANSELMINO, M.; BOER, D.; DALESIO, U.; MURGIA, F.

2001-01-01

We study the fragmentation of a transversely polarized quark into a non-collinear (kperpendicular ≠ 0) spinless hadron and the fragmentation of an unpolarized quark into a non collinear transversely polarized spin 1/2 baryon. These nonperturbative properties are described by spin and kperpendicular dependent fragmentation functions and are revealed in the observation of single spin asymmetries. Recent data on the production of pions in polarized semi-inclusive DIS and long known data on A polarization in unpolarized p-N processes are considered: these new fragmentation functions can describe the experimental results and the single spin effects in the quark fragmentation turn out to be surprisingly large

Spin polarization of electrons in a magnetic impurity doped ...

Indian Academy of Sciences (India)

Abstract. A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different ...

Spin polarization of electrons in a magnetic impurity doped ...

Indian Academy of Sciences (India)

A theoretical model is presented in this paper for degree of spin polarization in alight emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and ...

Max Auwaerter symposium: spin mapping and spin manipulation on the atomic scale

International Nuclear Information System (INIS)

Wiesendanger, R.

2008-01-01

Full text: A fundamental understanding of magnetic and spin-dependent phenomena requires the determination of spin structures and spin excitations down to the atomic scale. The direct visualization of atomic-scale spin structures has first been accomplished for magnetic metals by combining the atomic resolution capability of Scanning Tunnelling Microscopy (STM) with spin sensitivity, based on vacuum tunnelling of spin-polarized electrons. The resulting technique, Spin-Polarized Scanning Tunnelling Microscopy (SP-STM), nowadays provides unprecedented insight into collinear and non-collinear spin structures at surfaces of magnetic nanostructures and has already led to the discovery of new types of magnetic order at the nanoscale. More recently, the development of subkelvin SP-STM has allowed studies of ground-state magnetic properties of individual magnetic adatoms on non-magnetic substrates as well as the magnetic interactions between them. Based on SP-STM experiments performed at temperatures of 300 mK, indirect magnetic exchange interactions at the sub-milli-electronvolt energy scale between individual paramagnetic adatoms as well as between adatoms and nearby magnetic nanostructures could directly be revealed in real space up to distances of several nanometers. In both cases we have observed an oscillatory behavior of the magnetic exchange coupling, alternating between ferromagnetic and antiferromagnetic, as a function of distance. Moreover, the detection of spin-dependent exchange and correlation forces has allowed a first direct real-space observation of spin structures at surfaces of antiferromagnetic insulators. This new type of scanning probe microscopy, called Magnetic Exchange Force Microscopy (MExFM), offers a powerful new tool to investigate different types of spin-spin interactions based on direct-, super-, or RKKY-type exchange down to the atomic level. By combining MExFM with high-precision measurements of damping forces, localized or confined spin

A technique for measurement of vector and tensor polarization in solid spin one polarized targets

International Nuclear Information System (INIS)

Kielhorn, W.F.

1991-06-01

Vector and tensor polarizations are explicitly defined and used to characterize the polarization states of spin one polarized targets, and a technique for extracting these polarizations from nuclear magnetic resonance (NMR) data is developed. This technique is independent of assumptions about spin temperature, but assumes the target's crystal structure induces a quadrupole interaction with the spin one particles. Analysis of the NMR signals involves a computer curve fitting algorithm implemented with a fast Fourier transform method which speeds and simplifies curve fitting algorithms used previously. For accurate curve fitting, the NMR electronic circuit must be modeled by the fitting algorithm. Details of a circuit, its model, and data collected from this circuit are given for a solid deuterated ammonia target. 37 refs., 19 figs., 3 tabs

Spectrum of spin waves in cold polarized gases

Energy Technology Data Exchange (ETDEWEB)

Andreeva, T. L., E-mail: phdocandreeva@yandex.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2017-02-15

The spin dynamics of cold polarized gases are investigated using the Boltzmann equation. The dispersion relation for spin waves (transverse component of the magnetic moment) and the spin diffusion coefficient of the longitudinal component of the magnetic moment are calculated without using fitting parameters. The spin wave frequency and the diffusion coefficient for rubidium atoms are estimated numerically.

Two-photon spin-polarization spectroscopy in silicon-doped GaAs.

Science.gov (United States)

Miah, M Idrish

2009-05-14

We generate spin-polarized electrons in bulk GaAs using circularly polarized two-photon pumping with excess photon energy (DeltaE) and detect them by probing the spin-dependent transmission of the sample. The spin polarization of conduction band electrons is measured and is found to be strongly dependent on DeltaE. The initial polarization, pumped with DeltaE=100 meV, at liquid helium temperature is estimated to be approximately 49.5%, which is very close to the theoretical value (50%) permitted by the optical selection rules governing transitions from heavy-hole and light-hole states to conduction band states in a bulk sample. However, the polarization pumped with larger DeltaE decreases rapidly because of the exciting carriers from the split-off band.

Injection and detection of a spin-polarized current in a light-emitting diode

Science.gov (United States)

Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

1999-12-01

The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

Spin exchange in polarized deuterium

International Nuclear Information System (INIS)

Przewoski, B. von; Meyer, H.O.; Balewski, J.; Doskow, J.; Ibald, R.; Pollock, R.E.; Rinckel, T.; Wellinghausen, A.; Whitaker, T.J.; Daehnick, W.W.; Haeberli, W.; Schwartz, B.; Wise, T.; Lorentz, B.; Rathmann, F.; Pancella, P.V.; Saha, Swapan K.; Thoerngren-Engblom, P.

2003-01-01

We have measured the vector and tensor polarization of an atomic deuterium target as a function of the target density. The polarized deuterium was produced in an atomic beam source and injected into a storage cell. For this experiment, the atomic beam source was operated without rf transitions, in order to avoid complications from the unknown efficiency of these transitions. In this mode, the atomic beam is vector and tensor polarized and both polarizations can be measured simultaneously. We used a 1.2-cm-diam and 27-cm-long storage cell, which yielded an average target density between 3 and 9x10 11 at/cm 3 . We find that the tensor polarization decreases with increasing target density while the vector polarization remains constant. The data are in quantitative agreement with the calculated effect of spin exchange between deuterium atoms at low field

Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

International Nuclear Information System (INIS)

Abouie, J; Abdollahipour, B; Rostami, A A

2013-01-01

We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

Science.gov (United States)

Hong, Ie-Hong; Hsu, Hsin-Zan

2018-03-01

The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

Science.gov (United States)

Schoonus, J J H M; Lumens, P G E; Wagemans, W; Kohlhepp, J T; Bobbert, P A; Swagten, H J M; Koopmans, B

2009-10-02

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

Spin-polarized photoemission from SiGe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2013-12-04

We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

Spin and radiation in intense laser fields

International Nuclear Information System (INIS)

Walser, M.W.; Urbach, D.J.; Hatsagortsyan, K.Z.; Hu, S.X.; Keitel, C.H.

2002-01-01

The spin dynamics and its reaction on the particle motion are investigated for free and bound electrons in intense linearly polarized laser fields. Employing both classical and quantum treatments we analytically evaluate the spin oscillation of free electrons in intense laser fields and indicate the effect of spin-orbit coupling on the motion of the electron. In Mott scattering an estimation for the spin oscillation is derived. In intense laser ion dynamics spin signatures are studied in detail with emphasis on high-order harmonic generation in the tunneling regime. First- and second-order calculations in the ratio of electron velocity and the speed of light show spin signatures in the radiation spectrum and spin-orbit effects in the electron polarization

Conductance and spin polarization for a quantum wire with the competition of Rashba and Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui

2010-01-01

We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.

Polarization of a stored beam by spin filtering

International Nuclear Information System (INIS)

Weidemann, C.

2014-01-01

In 2011 the PAX Collaboration has performed a successful spin-filtering test using protons at Tp = 49.3 MeV at the COSY ring, which confirms that spin filtering is a viable method to polarize a stored beam and that the present interpretation of the mechanism in terms of the proton-proton interaction is correct. The equipment and the procedures to produce stored polarized beams was successfully commissioned and are established. The outcome of the experiment is of utmost importance in view of the possible application of the method to polarize a beam of stored antiprotons. (author)

The effects of Rashba spin-orbit coupling on spin-polarized transport in hexagonal graphene nano-rings and flakes

Science.gov (United States)

Laghaei, M.; Heidari Semiromi, E.

2018-03-01

Quantum transport properties and spin polarization in hexagonal graphene nanostructures with zigzag edges and different sizes were investigated in the presence of Rashba spin-orbit interaction (RSOI). The nanostructure was considered as a channel to which two semi-infinite armchair graphene nanoribbons were coupled as input and output leads. Spin transmission and spin polarization in x, y, and z directions were calculated through applying Landauer-Buttiker formalism with tight binding model and the Green's function to the system. In these quantum structures it is shown that changing the size of system, induce and control the spin polarized currents. In short, these graphene systems are typical candidates for electrical spintronic devices as spin filtering.

Perturbation of nuclear spin polarizations in solid state NMR of nitroxide-doped samples by magic-angle spinning without microwaves

Energy Technology Data Exchange (ETDEWEB)

Thurber, Kent R., E-mail: thurberk@niddk.nih.gov; Tycko, Robert [Laboratory of Chemical Physics, National Institute of Diabetes and Digestive and Kidney Diseases, National Institutes of Health, Bethesda, Maryland 20892-0520 (United States)

2014-05-14

We report solid state {sup 13}C and {sup 1}H nuclear magnetic resonance (NMR) experiments with magic-angle spinning (MAS) on frozen solutions containing nitroxide-based paramagnetic dopants that indicate significant perturbations of nuclear spin polarizations without microwave irradiation. At temperatures near 25 K, {sup 1}H and cross-polarized {sup 13}C NMR signals from {sup 15}N,{sup 13}C-labeled L-alanine in trinitroxide-doped glycerol/water are reduced by factors as large as six compared to signals from samples without nitroxide doping. Without MAS or at temperatures near 100 K, differences between signals with and without nitroxide doping are much smaller. We attribute most of the reduction of NMR signals under MAS near 25 K to nuclear spin depolarization through the cross-effect dynamic nuclear polarization mechanism, in which three-spin flips drive nuclear polarizations toward equilibrium with spin polarization differences between electron pairs. When T{sub 1e} is sufficiently long relative to the MAS rotation period, the distribution of electron spin polarization across the nitroxide electron paramagnetic resonance lineshape can be very different from the corresponding distribution in a static sample at thermal equilibrium, leading to the observed effects. We describe three-spin and 3000-spin calculations that qualitatively reproduce the experimental observations.

Perturbation of nuclear spin polarizations in solid state NMR of nitroxide-doped samples by magic-angle spinning without microwaves

International Nuclear Information System (INIS)

Thurber, Kent R.; Tycko, Robert

2014-01-01