WorldWideScience

Sample records for spin polarized tunneling

  1. Thermal stability of tunneling spin polarization

    International Nuclear Information System (INIS)

    Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

    2005-01-01

    We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

  2. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  3. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  4. Spin-polarized tunneling through a ferromagnetic insulator

    NARCIS (Netherlands)

    Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

    2009-01-01

    The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

  5. Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

    NARCIS (Netherlands)

    Jansen, R.; Lodder, J.C.

    2000-01-01

    Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

  6. Spin-polarized inelastic tunneling through insulating barriers.

    Science.gov (United States)

    Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

    2009-05-01

    Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

  7. Spin-Polarization in Quasi-Magnetic Tunnel Junctions

    Science.gov (United States)

    Xie, Zheng-Wei; Li, Ling

    2017-05-01

    Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

  8. Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

    2005-01-01

    The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

  9. Anomalous Tunneling of Spin Wave in Polar State of Spin-1 BEC

    International Nuclear Information System (INIS)

    Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

    2012-01-01

    We investigate tunneling properties of collective spin-wave excitations in the polar state of a spin-1 spinor Bose-Einstein condensate. Within the mean-field theory at T = 0, we show that when the condensate is in the critical supercurrent state, the spin wave mode exhibits perfect transmission through a nonmagnetic potential barrier in the low energy limit, unless the strength of a spin-independent interaction c o equals that of a spin-dependent interaction c o Such an anomalous tunneling behavior is absent in the case of a magnetic barrier. We also clarify a scaling law of the transmission probability as a function of the mode energy.

  10. Anomalous Tunneling of Spin Wave in Polar State of Spin-1 BEC

    Science.gov (United States)

    Watabe, Shohei; Kato, Yusuke; Ohashi, Yoji

    2012-12-01

    We investigate tunneling properties of collective spin-wave excitations in the polar state of a spin-1 spinor Bose-Einstein condensate. Within the mean-field theory at T = 0, we show that when the condensate is in the critical supercurrent state, the spin wave mode exhibits perfect transmission through a nonmagnetic potential barrier in the low energy limit, unless the strength of a spin-independent interaction co equals that of a spin-dependent interaction co Such an anomalous tunneling behavior is absent in the case of a magnetic barrier. We also clarify a scaling law of the transmission probability as a function of the mode energy.

  11. Spin polarization of tunneling current in barriers with spin-orbit coupling.

    Science.gov (United States)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-03-19

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

  12. Spin polarization of tunneling current in barriers with spin-orbit coupling

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

  13. Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

    Science.gov (United States)

    Bode, Matthias

    2012-01-01

    The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures.

  14. Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

    Science.gov (United States)

    Miyazaki, T.; Tezuka, N.; Kumagai, S.; Ando, Y.; Kubota, H.; Murai, J.; Watabe, T.; Yokota, M.

    1998-03-01

    Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (I)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a `wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, 0022-3727/31/6/009/img1, and the tunnelling magnetoresistance ratio, TMR, of an 0022-3727/31/6/009/img2 junction decreased rapidly with increasing temperature, whereas those of a 0022-3727/31/6/009/img3 junction were insensitive to temperature. Concerning the bias voltage dependence of 0022-3727/31/6/009/img1 and TMR, the same tendency with temperature was observed for 0022-3727/31/6/009/img2 and 0022-3727/31/6/009/img3 junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

  15. Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

    International Nuclear Information System (INIS)

    Hao, X.; Moodera, J.S.; Meservey, R.

    1989-01-01

    The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

  16. Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

    2004-01-01

    A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

  17. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  18. Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  19. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  20. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

    Science.gov (United States)

    Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

    2017-06-27

    The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

  1. Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

    Science.gov (United States)

    Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

    2011-10-28

    The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

  2. Spin polarized tunnelling investigation of nanometre Co clusters by means of a Ni bulk tip

    International Nuclear Information System (INIS)

    Rastei, M V; Bucher, J P

    2006-01-01

    A massive Ni tip is used in spin polarized scanning tunnelling microscopy (SP STM) to explore the magnetization state of nanometre Co clusters, self-organized on the Au(111) surface. Constant current STM images taken at 4.6 K show a bimodal distribution of the cluster heights, accounting for the spin polarization of the STM junction. The spin polarization of the tunnel junction as a function of the bias voltage is found to depend on the local density of states of the sample examined. Changing the vacuum barrier parameters by bringing the tip closer to the surface leads to a reduction in the tunnelling magnetoresistance that may be attributed to spin flip effects. (letter to the editor)

  3. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  4. Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling.

    Science.gov (United States)

    Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; de la Fuente, César; Arnaudas, José Ignacio

    2015-09-03

    High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths.

  5. Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

    International Nuclear Information System (INIS)

    Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

    2014-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

  6. Oliver E. Buckley Prize Talk: Spin polarized tunneling and tunnel magnetoresistance -- Learning from the past and moving forward

    Science.gov (United States)

    Moodera, Jagadeesh

    2009-03-01

    Electron tunneling phenomenon has contributed enormously to our understanding of various branches of physics over the years. The technique of spin polarized tunneling (SPT), sensing the spin polarization of tunneling electrons using a superconducting spin detector, discovered by Meservey and Tedrow in the early seventies has been successfully utilized over the years to understand many aspects of magnetism and superconductivity. Electrical spin injection/detection in a semiconductor is strongly believed to succeed through such an approach. The successful observation of a large change in tunnel current in magnetic tunnel junctions (MTJ) in the mid nineties has brought extreme activity in this field -- both from fundamental study as well as extensive application in mind (as sensors, nonvolatile memory devices, logic elements etc). From the early history of this field that led to the discovery of room temperature TMR effect to the observation of many novel phenomena to the exciting recent work on spin filtering, spin transport in semiconductors to toggling of the superconducting state with spin current will be highlighted and reviewed. Work done in collaboration with Drs. Meservey and Tedrow, PhD students, postdoctorals, as well as high school students and undergraduates. NSF, ONR, DARPA and KIST-MIT project funds supported the research over the years.

  7. The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

    2017-01-01

    Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

  8. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    Science.gov (United States)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  9. The impact of structural relaxation on spin polarization and magnetization reversal of individual nano structures studied by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen

    2014-10-01

    The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.

  10. Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.

    Science.gov (United States)

    Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P

    2016-10-26

    The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.

  11. Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

    2014-10-01

    The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

  12. Spin-polarized scanning-tunneling probe for helical Luttinger liquids.

    Science.gov (United States)

    Das, Sourin; Rao, Sumathi

    2011-06-10

    We propose a three-terminal spin-polarized STM setup for probing the helical nature of the Luttinger liquid edge state that appears in the quantum spin Hall system. We show that the three-terminal tunneling conductance depends on the angle (θ) between the magnetization direction of the tip and the local orientation of the electron spin on the edge while the two terminal conductance is independent of this angle. We demonstrate that chiral injection of an electron into the helical Luttinger liquid (when θ is zero or π) is associated with fractionalization of the spin of the injected electron in addition to the fractionalization of its charge. We also point out a spin current amplification effect induced by the spin fractionalization.

  13. Recent advances in atomic-scale spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Smith, Arthur R; Yang, Rong; Yang, Haiqiang; Dick, Alexey; Neugebauer, Joerg; Lambrecht, Walter R L

    2005-02-01

    The Mn3N2 (010) surface has been studied using spin-polarized scanning tunneling microscopy at the atomic scale. The principle objective of this work is to elucidate the properties and potential of this technique to measure atomic-scale magnetic structures. The experimental approach involves the use of a combined molecular beam epitaxy/scanning tunneling microscopy system that allows the study of atomically clean magnetic surfaces. Several key findings have been obtained. First, both magnetic and non-magnetic atomic-scale information has been obtained in a single spin-polarized image. Magnetic modulation of the height profile having an antiferromagnetic super-period of c = 12.14 A (6 atomic rows) together with a non-magnetic superstructure having a period of c/2 = 6.07 A (3 atomic rows) was observed. Methods of separation of magnetic and non-magnetic profiles are presented. Second, bias voltage-dependent spin-polarized images show a reversal of the magnetic modulation at a particular voltage. This reversal is clearly due to a change in the sign of the magnetic term in the tunnel current. Since this term depends on both the tip's as well as the sample's magnetic local density of states, the reversal can be caused by either the sample or the tip. Third, the shape of the line profile was found to vary with the bias voltage, which is related to the energy-dependent spin contribution from the 2 chemically inequivalent Mn sites on the surface. Overall, the results shown here expand the application of the method of spin-polarized scanning tunneling microscopy to measure atomic-scale magnetic structures. (c) 2005 Wiley-Liss, Inc.

  14. Experimental verification of the rotational type of chiral spin spiral structures by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Haze, Masahiro; Yoshida, Yasuo; Hasegawa, Yukio

    2017-10-16

    We report on experimental verification of the rotational type of chiral spin spirals in Mn thin films on a W(110) substrate using spin-polarized scanning tunneling microscopy (SP-STM) with a double-axis superconducting vector magnet. From SP-STM images using Fe-coated W tips magnetized to the out-of-plane and [001] directions, we found that both Mn mono- and double-layers exhibit cycloidal rotation whose spins rotate in the planes normal to the propagating directions. Our results agree with the theoretical prediction based on the symmetry of the system, supporting that the magnetic structures are driven by the interfacial Dzyaloshinskii-Moriya interaction.

  15. In situ scanning tunneling microscope tip treatment device for spin polarization imaging

    Science.gov (United States)

    Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

    2008-04-22

    A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

  16. Compact scanning tunneling microscope for spin polarization measurements.

    Science.gov (United States)

    Kim, Seong Heon; de Lozanne, Alex

    2012-10-01

    We present a design for a scanning tunneling microscope that operates in ultrahigh vacuum down to liquid helium temperatures in magnetic fields up to 8 T. The main design philosophy is to keep everything compact in order to minimize the consumption of cryogens for initial cool-down and for extended operation. In order to achieve this, new ideas were implemented in the design of the microscope body, dewars, vacuum chamber, manipulators, support frame, and vibration isolation. After a brief description of these designs, the results of initial tests are presented.

  17. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  18. Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes.

    Science.gov (United States)

    Phark, Soo-Hyon; Sander, Dirk

    2017-01-01

    Spin-polarized scanning tunneling microscopy and spectroscopy (spin-STM/S) have been successfully applied to magnetic characterizations of individual nanostructures. Spin-STM/S is often performed in magnetic fields of up to some Tesla, which may strongly influence the tip state. In spite of the pivotal role of the tip in spin-STM/S, the contribution of the tip to the differential conductance d I /d V signal in an external field has rarely been investigated in detail. In this review, an advanced analysis of spin-STM/S data measured on magnetic nanoislands, which relies on a quantitative magnetic characterization of tips, is discussed. Taking advantage of the uniaxial out-of-plane magnetic anisotropy of Co bilayer nanoisland on Cu(111), in-field spin-STM on this system has enabled a quantitative determination, and thereby, a categorization of the magnetic states of the tips. The resulting in-depth and conclusive analysis of magnetic characterization of the tip opens new venues for a clear-cut sub-nanometer scale spin ordering and spin-dependent electronic structure of the non-collinear magnetic state in bilayer high Fe nanoislands on Cu(111).

  19. Theory for Spin Selective Andreev Re ection in Vortex Core of Topological Superconductor: Majorana Zero Modes on Spherical Surface and Application to Spin Polarized Scanning Tunneling Microscope Probe

    Science.gov (United States)

    Zhang, Fu-Chun; Hu, Lun-Hui; Li, Chuang; Xu, Dong-Hui; Zhou, Yi

    Majorana zero modes (MZMs) have been predicted to exist in the topological insulator (TI)/superconductor (SC) heterostructure. Recent spin polarized scanning tunneling microscope(STM) experiment has observed spin-polarization dependence of the zero bias differential tunneling conductance at the center of vortex core. Here we consider a helical electron system described by a Rashba spin orbit coupling Hamiltonian on a spherical surface with a s-wave superconducting pairing due to proximity effect. We examine in-gap excitations of a pair of vortices with one at the north pole and the other at the south pole. While the MZM is not a spin eigenstate, the spin wavefunction of the MZM at the center of the vortex core, r = 0, is parallel to the magnetic field, and the local Andreev reflection of the MZM is spin selective, namely occurs only when the STM tip has the spin polarization parallel to the magnetic field, similar to the case in 1-dimensional nanowire. The total local differential tunneling conductance consists of the normal term proportional to the local density of states and an additional term arising from the Andreev reflection. We apply our theory to examine the recently reported spin-polarized STM experiments and show good agreement with the experiments

  20. Spin-polarized scanning tunneling spectroscopy of self-organized nanoscale Co islands on Au(111) surfaces.

    Science.gov (United States)

    Schouteden, K; Muzychenko, D A; Van Haesendonck, C

    2008-07-01

    Magnetic monolayer and bilayer Co islands of only a few nanometer in size were grown by atomic deposition on atomically flat Au(111) films. The islands were studied in situ by scanning tunneling microscopy (STM) and spectroscopy at low temperatures. Spin-resolved tunneling spectroscopy, using an STM tip with a magnetic coating, revealed that the Co islands exhibit a net magnetization perpendicular to the substrate surface due to the presence of spin-polarized d-states. A random distribution of islands with either upward or downward pointing magnetization was observed, without any specific correlation of magnetization orientation with island size or island height.

  1. Spin-polarized scanning tunneling microscopy and spectroscopy study of chromium on a Cr(001) surface.

    Science.gov (United States)

    Lagoute, J; Kawahara, S L; Chacon, C; Repain, V; Girard, Y; Rousset, S

    2011-02-02

    Several tens of chromium layers were deposited at 250 °C on a Cr(001) surface and investigated by spin-polarized scanning tunneling microscopy (SP-STM), Auger electron spectroscopy (AES) and scanning tunneling spectroscopy (STS). Chromium is found to grow with a mound-like morphology resulting from the stacking of several monolayers which do not uniformly cover the whole surface of the substrate. The terminal plane consists of an irregular array of Cr islands with lateral sizes smaller than 20 × 20 nm(2). Combined AES and STS measurements reveal the presence of a significant amount of segregants prior to and after deposition. A detailed investigation of the surface shows that it consists of two types of patches. Thanks to STS measurements, the two types of area have been identified as being either chromium pure or segregant rich. SP-STM experiments have evidenced that the antiferromagnetic layer coupling remains in the chromium mounds after deposition and is not significantly affected by the presence of the segregants.

  2. Spin-polarized spin excitation spectroscopy

    International Nuclear Information System (INIS)

    Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

    2010-01-01

    We report on the spin dependence of elastic and inelastic electron tunneling through transition metal atoms. Mn, Fe and Cu atoms were deposited onto a monolayer of Cu 2 N on Cu(100) and individually addressed with the probe tip of a scanning tunneling microscope. Electrons tunneling between the tip and the substrate exchange energy and spin angular momentum with the surface-bound magnetic atoms. The conservation of energy during the tunneling process results in a distinct onset threshold voltage above which the tunneling electrons create spin excitations in the Mn and Fe atoms. Here we show that the additional conservation of spin angular momentum leads to different cross-sections for spin excitations depending on the relative alignment of the surface spin and the spin of the tunneling electron. For this purpose, we developed a technique for measuring the same local spin with a spin-polarized and a non-spin-polarized tip by exchanging the last apex atom of the probe tip between different transition metal atoms. We derive a quantitative model describing the observed excitation cross-sections on the basis of an exchange scattering process.

  3. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    Energy Technology Data Exchange (ETDEWEB)

    Awan, I. T.; Galvão Gobato, Y. [Departamento de Física, Universidade Federal de São Carlos (UFSCAR) 13560-905, São Carlos, SP (Brazil); Galeti, H. V. A. [Departamento de Engenharia Elétrica, Universidade Federal de São Carlos 13560-905, São Carlos, SP (Brazil); Brasil, M. J. S. P. [Institute of Physics Gleb Wataghin, UNICAMP, Campinas (Brazil); Taylor, D.; Henini, M. [School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2014-08-07

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  4. Anomalous tunneling of collective excitations and effects of superflow in the polar phase of a spin-1 spinor Bose-Einstein condensate

    International Nuclear Information System (INIS)

    Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

    2011-01-01

    We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.

  5. Anomalous tunneling of collective excitations and effects of superflow in the polar phase of a spin-1 spinor Bose-Einstein condensate

    Energy Technology Data Exchange (ETDEWEB)

    Watabe, Shohei; Ohashi, Yoji [Department of Physics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); CREST (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Kato, Yusuke [Department of Basic Science, University of Tokyo, Tokyo 153-8902 (Japan)

    2011-07-15

    We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.

  6. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Directory of Open Access Journals (Sweden)

    Bin Fang

    2016-12-01

    Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  7. Optimization of the polarized Klein tunneling currents in a sub-lattice: pseudo-spin filters and latticetronics in graphene ribbons.

    Science.gov (United States)

    López, Luis I A; Yaro, Simeón Moisés; Champi, A; Ujevic, Sebastian; Mendoza, Michel

    2014-02-12

    We found that with an increase of the potential barrier applied to metallic graphene ribbons, the Klein tunneling current decreases until it is totally destroyed and the pseudo-spin polarization increases until it reaches its maximum value when the current is zero. This inverse relation disfavors the generation of polarized currents in a sub-lattice. In this work we discuss the pseudo-spin control (polarization and inversion) of the Klein tunneling currents, as well as the optimization of these polarized currents in a sub-lattice, using potential barriers in metallic graphene ribbons. Using density of states maps, conductance results, and pseudo-spin polarization information (all of them as a function of the energy V and width of the barrier L), we found (V, L) intervals in which the polarized currents in a given sub-lattice are maximized. We also built parallel and series configurations with these barriers in order to further optimize the polarized currents. A systematic study of these maps and barrier configurations shows that the parallel configurations are good candidates for optimization of the polarized tunneling currents through the sub-lattice. Furthermore, we discuss the possibility of using an electrostatic potential as (i) a pseudo-spin filter or (ii) a pseudo-spin inversion manipulator, i.e. a possible latticetronic of electronic currents through metallic graphene ribbons. The results of this work can be extended to graphene nanostructures.

  8. Spin-polarized electron tunneling in bcc FeCo/MgO/FeCo(001) magnetic tunnel junctions.

    Science.gov (United States)

    Bonell, F; Hauet, T; Andrieu, S; Bertran, F; Le Fèvre, P; Calmels, L; Tejeda, A; Montaigne, F; Warot-Fonrose, B; Belhadji, B; Nicolaou, A; Taleb-Ibrahimi, A

    2012-04-27

    In combining spin- and symmetry-resolved photoemission, magnetotransport measurements and ab initio calculations we detangled the electronic states involved in the electronic transport in Fe(1-x)Co(x)(001)/MgO/Fe(1-x)Co(x)(001) magnetic tunnel junctions. Contrary to previous theoretical predictions, we observe a large reduction in TMR (from 530 to 200% at 20 K) for Co content above 25 atomic% as well as anomalies in the conductance curves. We demonstrate that these unexpected behaviors originate from a minority spin state with Δ(1) symmetry that exists below the Fermi level for high Co concentration. Using angle-resolved photoemission, this state is shown to be a two-dimensional state that occurs at both Fe(1-x)Co(x)(001) free surface, and more importantly at the interface with MgO. The combination of this interface state with the peculiar density of empty states due to chemical disorder allows us to describe in details the complex conduction behavior in this system.

  9. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  10. Real-space observation of a right-rotating inhomogeneous cycloidal spin spiral by spin-polarized scanning tunneling microscopy in a triple axes vector magnet.

    Science.gov (United States)

    Meckler, S; Mikuszeit, N; Pressler, A; Vedmedenko, E Y; Pietzsch, O; Wiesendanger, R

    2009-10-09

    Using spin-polarized scanning tunneling microscopy performed in a triple axes vector magnet, we show that the magnetic structure of the Fe double layer on W(110) is an inhomogeneous right-rotating cycloidal spin spiral. The magnitude of the Dzyaloshinskii-Moriya vector is extracted from the experimental data using micromagnetic calculations. The result is confirmed by comparison of the measured saturation field along the easy axis to the respective value as obtained from Monte Carlo simulations. We find that the Dzyaloshinskii-Moriya interaction is too weak to destabilize the single domain state. However, it can define the sense of rotation and the cycloidal spiral type once the single domain state is destabilized by dipolar interaction.

  11. Co on Pt(111) studied by spin-polarized scanning tunneling microscopy and spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Meier, F.K.

    2006-07-01

    In this thesis the electronic properties of the bare Pt(111) surface, the structural, electronic, and magnetic properties of monolayer and double-layer high Co nanostructures as well as the spin-averaged electronic structure of single Co atoms on Pt(111) were studied by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The experiments on the bare Pt(111) surface and on single Co atoms have been performed in an STM facility operating at temperatures of down to 0.3 K and at magnetic fields of up to 14 T under ultra-high vacuum conditions. The facility has been taken into operation within the time period of this thesis and its specifications were tested by STS measurements. These characterization measurements show a very high stability of the tunneling junction and an energy resolution of about 100 {mu}eV, which is close to the thermal limit. The investigation of the electronic structure of the bare Pt(111) surface reveals the existence of an unoccupied surface state. By a comparison of the measured dispersion to first-principles electronic structure calculations the state is assigned to an sp-derived surface band at the lower boundary of the projected bulk band gap. The surface state exhibits a strong spin-orbit coupling induced spin splitting. The close vicinity to the bulk bands leads to a strong linear contribution to the dispersion and thus to a deviant appearance in the density of states in comparison to the surface states of the (111) surfaces of noble metals. A detailed study of Co monolayer and double-layer nanostructures on the Pt(111) surface shows that both kinds of nanostructures exhibit a highly inhomogeneous electronic structure which changes at the scale of only a few Aa due to a strong stacking dependence with respect to the Pt(111) substrate. With the help of first principles calculations the different spectroscopic appearance for Co atoms within the Co monolayer is assigned to a stacking dependent hybridization of Co states

  12. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  13. Theory of electrically controlled resonant tunneling spin devices

    Science.gov (United States)

    Ting, David Z. -Y.; Cartoixa, Xavier

    2004-01-01

    We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

  14. Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches

    Science.gov (United States)

    Nabila, Ezra; Noor, Fatimah A.; Khairurrijal

    2017-07-01

    In this study, we report an analytical calculation of electron transmittance and polarized tunneling current in a single barrier heterostructure of a metal-GaSb-metal by considering the Dresselhaus spin orbit effect. Exponential function, WKB method and Airy function were used in calculating the electron transmittance and tunneling current. A Transfer Matrix Method, as a numerical method, was utilized as the benchmark to evaluate the analytical calculation. It was found that the transmittances calculated under exponential function and Airy function is the same as that calculated under TMM method at low electron energy. However, at high electron energy only the transmittance calculated under Airy function approach is the same as that calculated under TMM method. It was also shown that the transmittances both of spin-up and spin-down conditions increase as the electron energy increases for low energies. Furthermore, the tunneling current decreases with increasing the barrier width.

  15. Dynamic nuclear spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Stuhrmann, H.B. [GKSS-Forschungszentrum Geesthacht GmbH (Germany)

    1996-11-01

    Polarized neutron scattering from dynamic polarized targets has been applied to various hydrogenous materials at different laboratories. In situ structures of macromolecular components have been determined by nuclear spin contrast variation with an unprecedented precision. The experiments of selective nuclear spin depolarisation not only opened a new dimension to structural studies but also revealed phenomena related to propagation of nuclear spin polarization and the interplay of nuclear polarisation with the electronic spin system. The observation of electron spin label dependent nuclear spin polarisation domains by NMR and polarized neutron scattering opens a way to generalize the method of nuclear spin contrast variation and most importantly it avoids precontrasting by specific deuteration. It also likely might tell us more about the mechanism of dynamic nuclear spin polarisation. (author) 4 figs., refs.

  16. Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces

    NARCIS (Netherlands)

    Wang, Kai; Strambini, Elia; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2016-01-01

    The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we

  17. Spin dynamics in tunneling decay of a metastable state

    OpenAIRE

    Ban, Yue; Sherman, E. Ya.

    2012-01-01

    We analyze spin dynamics in the tunneling decay of a metastable localized state in the presence of spin-orbit coupling. We find that the spin polarization at short time scales is affected by the initial state while at long time scales both the probability- and the spin density exhibit diffraction-in-time phenomenon. We find that in addition to the tunneling time the tunneling in general can be characterized by a new parameter, the tunneling length. Although the tunneling length is independent...

  18. Spin Tunneling in Junctions with Disordered Ferromagnets

    NARCIS (Netherlands)

    Paluskar, P.V.; Attema, J.J.; de Wijs, G.A.; Fiddy, S.; Snoeck, E.; Kohlhepp, J.T.; Swagten, H.J.M.; de Groot, R. A.; Koopmans, H.

    2008-01-01

    We provide compelling evidence to establish that, contrary to one’s elementary guess, the tunneling spin polarization (TSP) of amorphous CoFeB is larger than that of fcc CoFeB. First-principles atomic and electronic structure calculations reveal striking agreement between the measured TSP and the

  19. Simulations of Resonant Intraband and Interband Tunneling Spin Filters

    Science.gov (United States)

    Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

    2001-01-01

    This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

  20. Spin tunnelling in mesoscopic systems

    Indian Academy of Sciences (India)

    Spin tunnelling; spin path integrals; discrete phase integral method; diabolical points. ... technologies. Our purpose in this article is rather different. The molecular systems have total spin of the order of 10, and magnetocrystalline anisotropies of few tens of Kelvin ...... The point С' is of this new type, and here it may be said to.

  1. Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2

    Science.gov (United States)

    Tahir, M.; Krstajić, P. M.; Vasilopoulos, P.

    2017-06-01

    The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin Ms and valley Mv Zeeman fields and of an electric potential U . The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin Ps and valley Pv polarizations rise with M =Mv=2 Ms , reach a value of more than 55 % , and become perfect above U ≈45 meV while for a double junction this change can occur for U ≥50 meV and M ≥5 meV. In certain regions of the (M ,U ) plane Pv becomes perfect. The conductance gc, its spin-up and spin-down components, and both polarizations oscillate with the barrier width d . The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices.

  2. Spin tunnelling in mesoscopic systems

    Indian Academy of Sciences (India)

    We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the ...

  3. Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

    OpenAIRE

    Saffarzadeh, Alireza; Daqiq, Reza

    2009-01-01

    We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

  4. Spin heat accumulation induced by tunneling from a ferromagnet.

    Science.gov (United States)

    Vera-Marun, I J; van Wees, B J; Jansen, R

    2014-02-07

    An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

  5. Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

    Directory of Open Access Journals (Sweden)

    Ahmed Kenawy

    2017-05-01

    Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

  6. Spin tunnelling in mesoscopic systems

    Science.gov (United States)

    Garg, Anupam

    2001-02-01

    We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the space of magnetic fields, known as diabolical points. This phenomena is explained in terms of two approaches, one based on spin-coherent-state path integrals, and the other on a generalization of the phase integral (or WKB) method to difference equations. Explicit formulas for the diabolical points are obtained for a model Hamiltonian.

  7. Theory of high-resolution tunneling spin transport on a magnetic skyrmion

    OpenAIRE

    Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

    2018-01-01

    Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

  8. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  9. Spin tunneling and manipulation in nanostructures.

    Science.gov (United States)

    Sherman, E Ya; Ban, Yue; Gulyaev, L V; Khomitsky, D V

    2012-09-01

    The results for joint effects of tunneling and spin-orbit coupling on spin dynamics in nanostructures are presented for systems with discrete and continuous spectra. We demonstrate that tunneling plays the crucial role in the spin dynamics and the abilities of spin manipulation by external electric field. This result can be important for design of nanostructures-based spintronics devices.

  10. The critical role of the barrier thickness in spin filter tunneling

    International Nuclear Information System (INIS)

    Miller, Casey W.

    2009-01-01

    Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

  11. Spin-dependent tunnelling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

    2003-01-01

    The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

  12. 'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga

    Indian Academy of Sciences (India)

    The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga 1 − y ...

  13. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  14. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  15. Spin inelastic electron tunneling spectroscopy on local spin adsorbed on surface.

    Science.gov (United States)

    Fransson, J

    2009-06-01

    The recent experimental conductance measurements taken on magnetic impurities on metallic surfaces, using scanning tunneling microscopy technique and suggesting occurrence of inelastic scattering processes, are theoretically addressed. We argue that the observed conductance signatures are caused by transitions between the spin states that have opened due to, for example, exchange coupling between the local spins and the tunneling electrons, and are directly interpretable in terms of inelastic transitions energies. Feasible measurements using spin-polarized scanning tunneling microscopy that would enable new information about the excitation spectrum of the local spins are discussed.

  16. Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

    Directory of Open Access Journals (Sweden)

    H. Matsuyama

    2016-03-01

    Full Text Available We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

  17. Spin-dependent tunneling transport in a lateral magnetic diode

    International Nuclear Information System (INIS)

    Wang, Yu; Shi, Ying

    2012-01-01

    Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

  18. Spin-polarized current generated by magneto-electrical gating

    International Nuclear Information System (INIS)

    Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

    2012-01-01

    We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

  19. Spin tunneling in magnetic molecules

    Science.gov (United States)

    Kececioglu, Ersin

    In this thesis, we will focus on spin tunneling in a family of systems called magnetic molecules such as Fe8 and Mn12. This is comparatively new, in relation to other tunneling problems. Many issues are not completely solved and/or understood yet. The magnetic molecule Fe 8 has been observed to have a rich pattern of degeneracies in its magnetic spectrum. We focus on these degeneracies from several points of view. We start with the simplest anisotropy Hamiltonian to describe the Fe 8 molecule and extend our discussion to include higher order anisotropy terms. We give analytical expressions as much as we can, for the degeneracies in the semi-classical limit in both cases. We reintroduce jump instantons to the instanton formalism. Finally, we discuss the effect of the environment on the molecule. Our results, for all different models and techniques, agree well with both experimental and numerical results.

  20. Giant thermal spin-torque-assisted magnetic tunnel junction switching.

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P; Yang, See-Hun; Parkin, Stuart S P

    2015-05-26

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

  1. Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

    NARCIS (Netherlands)

    Vera Marun, I.J.; Jansen, R.

    2009-01-01

    We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

  2. Destructive quantum interference in spin tunneling problems

    OpenAIRE

    von Delft, Jan; Henley, Christopher L.

    1992-01-01

    In some spin tunneling problems, there are several different but symmetry-related tunneling paths that connect the same initial and final configurations. The topological phase factors of the corresponding tunneling amplitudes can lead to destructive interference between the different paths, so that the total tunneling amplitude is zero. In the study of tunneling between different ground state configurations of the Kagom\\'{e}-lattice quantum Heisenberg antiferromagnet, this occurs when the spi...

  3. Spin injection in n-type resonant tunneling diodes.

    Science.gov (United States)

    Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

    2012-10-25

    We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

  4. Tunneling Anomalous and Spin Hall Effects.

    Science.gov (United States)

    Matos-Abiague, A; Fabian, J

    2015-07-31

    We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

  5. Spin transfer torque with spin diffusion in magnetic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2012-08-09

    Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

  6. Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

    Science.gov (United States)

    Hong, Ie-Hong; Hsu, Hsin-Zan

    2018-03-01

    The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

  7. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  8. Spin transport in spin filtering magnetic tunneling junctions.

    Science.gov (United States)

    Li, Yun; Lee, Eok Kyun

    2007-11-01

    Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

  9. Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

    Science.gov (United States)

    Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

    2012-11-01

    Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

  10. Circular polarization in a non-magnetic resonant tunneling device

    Directory of Open Access Journals (Sweden)

    Airey Robert

    2011-01-01

    Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

  11. The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

    International Nuclear Information System (INIS)

    Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

    2016-01-01

    The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

  12. Homoepitaxial graphene tunnel barriers for spin transport

    Directory of Open Access Journals (Sweden)

    Adam L. Friedman

    2016-05-01

    Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  13. Spin exchange in polarized deuterium

    International Nuclear Information System (INIS)

    Przewoski, B. von; Meyer, H.O.; Balewski, J.; Doskow, J.; Ibald, R.; Pollock, R.E.; Rinckel, T.; Wellinghausen, A.; Whitaker, T.J.; Daehnick, W.W.; Haeberli, W.; Schwartz, B.; Wise, T.; Lorentz, B.; Rathmann, F.; Pancella, P.V.; Saha, Swapan K.; Thoerngren-Engblom, P.

    2003-01-01

    We have measured the vector and tensor polarization of an atomic deuterium target as a function of the target density. The polarized deuterium was produced in an atomic beam source and injected into a storage cell. For this experiment, the atomic beam source was operated without rf transitions, in order to avoid complications from the unknown efficiency of these transitions. In this mode, the atomic beam is vector and tensor polarized and both polarizations can be measured simultaneously. We used a 1.2-cm-diam and 27-cm-long storage cell, which yielded an average target density between 3 and 9x10 11 at/cm 3 . We find that the tensor polarization decreases with increasing target density while the vector polarization remains constant. The data are in quantitative agreement with the calculated effect of spin exchange between deuterium atoms at low field

  14. Observation of spin Hall effect in photon tunneling via weak measurements.

    Science.gov (United States)

    Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

    2014-12-09

    Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

  15. Spin Tunneling in a Rotating Nanomagnet

    Science.gov (United States)

    O'Keeffe, Michael; Chudnovsky, Eugene; Lehman College Theoretical Condensed Matter Physics Team

    2011-03-01

    We study spin tunneling in a magnetic nanoparticle with biaxial anisotropy that is free to rotate about its anisotropy axis. Exact instanton of the coupled equations of motion is found that connects degenerate classical energy minima. We show that mechanical freedom of the particle renormalizes magnetic anisotropy and increases the tunnel splitting. M. F. O'Keeffe and E. M. Chudnovsky, cond-mat, arXiv:1011.3134.

  16. Giant thermal spin-torque–assisted magnetic tunnel junction switching

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Parkin, Stuart S. P.

    2015-01-01

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. PMID:25971730

  17. Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2011-05-17

    Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

  18. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian

    2014-12-08

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  19. Nuclear spin polarization of targets

    International Nuclear Information System (INIS)

    Happer, W.

    1990-01-01

    Lasers can be used to produce milligrams to grams of noble gas nuclei with spin polarizations in excess of 50%. These quantities are sufficient to be very useful targets in nuclear physics experiments. Alkali-metal atoms are used to capture the angular momentum of circularly polarized laser photons, and the alkali-metal atoms transfer their angular momentum to noble gas atoms in binary or three-body collisions. Non-radiative collisions between the excited alkali atoms and molecular quenching gases are essential to avoid radiation trapping. The spin exchange can involve gas-phase van der Waals molecules, consisting of a noble gas atom and an alkali metal atom. Surface chemistry is also of great importance in determining the wall-induced relaxation rates of the noble gases

  20. Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

    2010-12-01

    A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

  1. Investigation of non-collinear spin states with scanning tunneling microscopy.

    Science.gov (United States)

    Wulfhekel, W; Gao, C L

    2010-03-05

    Most ferromagnetic and antiferromagnetic substances show a simple collinear arrangement of the local spins. Under certain circumstances, however, the spin configuration is non-collinear. Scanning tunneling microscopy with its potential atomic resolution is an ideal tool for investigating these complex spin structures. Non-collinearity can be due to topological frustration of the exchange interaction, due to relativistic spin-orbit coupling or can be found in excited states. Examples for all three cases are given, illustrating the capabilities of spin-polarized scanning tunneling microscopy.

  2. New materials research for high spin polarized current

    International Nuclear Information System (INIS)

    Tezuka, Nobuki

    2012-01-01

    The author reports here a thorough investigation of structural and magnetic properties of Co 2 FeAl 0.5 Si 0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co 2 FeAl 0.5 Si 0.5 electrodes, spin injection into GaAs semiconductor from Co 2 FeAl 0.5 Si 0.5 , and spin filtering phenomena for junctions with CoFe 2 O 4 ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co 2 FeAl 0.5 Si 0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co 2 FeAl 0.5 Si 0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co 2 FeAl 0.5 Si 0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co 2 FeAl 0.5 Si 0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.

  3. Amplification of spin-current polarization

    Science.gov (United States)

    Saha, D.; Holub, M.; Bhattacharya, P.

    2007-08-01

    A ferromagnet/semiconductor based electrically controlled spin-current amplifier using a dual-drain nonlocal lateral spin valve is demonstrated. The spin polarization injected by the source into the channel is amplified at the second drain contact. An amplified current spin polarization of 100% is measured. The controlled variation of amplifier gain with bias is also demonstrated. The observations are explained in the framework of the spin drift-diffusion model.

  4. Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laser

    Science.gov (United States)

    Holub, M.; Bhattacharya, P.; Shin, J.; Saha, D.

    2007-04-01

    An electroluminescence circular polarization of 23% and threshold current reduction of 11% are obtained in an electrically pumped spin-polarized vertical-cavity surface-emitting laser. Electron spin injection is accomplished utilizing a regrown Fe/ n-AlGaAs Schottky tunnel barrier deposited around the base of the laser mesas. Negligible circular polarizations and threshold current reductions are measured for nonmagnetic and Fe-based control VCSELs, which provides convincing evidence of spin injection, transport, and detection in our spin-polarized laser.

  5. Design and performance of an ultra-high vacuum spin-polarized scanning tunneling microscope operating at 30 mK and in a vector magnetic field

    Science.gov (United States)

    von Allwörden, Henning; Eich, Andreas; Knol, Elze J.; Hermenau, Jan; Sonntag, Andreas; Gerritsen, Jan W.; Wegner, Daniel; Khajetoorians, Alexander A.

    2018-03-01

    We describe the design and performance of a scanning tunneling microscope (STM) that operates at a base temperature of 30 mK in a vector magnetic field. The cryogenics is based on an ultra-high vacuum (UHV) top-loading wet dilution refrigerator that contains a vector magnet allowing for fields up to 9 T perpendicular and 4 T parallel to the sample. The STM is placed in a multi-chamber UHV system, which allows in situ preparation and exchange of samples and tips. The entire system rests on a 150-ton concrete block suspended by pneumatic isolators, which is housed in an acoustically isolated and electromagnetically shielded laboratory optimized for extremely low noise scanning probe measurements. We demonstrate the overall performance by illustrating atomic resolution and quasiparticle interference imaging and detail the vibrational noise of both the laboratory and microscope. We also determine the electron temperature via measurement of the superconducting gap of Re(0001) and illustrate magnetic field-dependent measurements of the spin excitations of individual Fe atoms on Pt(111). Finally, we demonstrate spin resolution by imaging the magnetic structure of the Fe double layer on W(110).

  6. Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking.

    Science.gov (United States)

    Habib, K M Masum; Sajjad, Redwan N; Ghosh, Avik W

    2015-05-01

    We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D topological insulator (TI). Our calculations show that the chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate-tunable spin-to-charge current ratio (∼20) at the reflected end. At the transmitted end, the ratio stays close to 1 and the electrons are completely spin polarized.

  7. Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

    Science.gov (United States)

    Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

    2010-07-23

    We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

  8. Transient charging and discharging of spin-polarized electrons in a quantum dot

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Leao, S.A.; Gester, R. M.

    2007-01-01

    We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green...

  9. Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

    International Nuclear Information System (INIS)

    Srisongmuang, B.; Ka-oey, A.

    2012-01-01

    We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band. - Highlights: → DSOC energy can be directly measured from tunneling conductance spectrum. → Spin polarization of conductance in the propagation direction can be obtained by injecting from DSOC system. → Both types of scattering can increase spin polarization.

  10. Diffusion equation and spin drag in spin-polarized transport

    DEFF Research Database (Denmark)

    Flensberg, Karsten; Jensen, Thomas Stibius; Mortensen, Asger

    2001-01-01

    We study the role of electron-electron interactions for spin-polarized transport using the Boltzmann equation, and derive a set of coupled transport equations. For spin-polarized transport the electron-electron interactions are important, because they tend to equilibrate the momentum of the two-s...

  11. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

    Science.gov (United States)

    Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

    2006-10-01

    Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

  12. Rashba and Dresselhaus spin-orbit coupling effects on tunnelling through two-dimensional magnetic quantum systems

    International Nuclear Information System (INIS)

    Xu Wen; Guo Yong

    2005-01-01

    We investigate the influence of the Rashba and Dresselhaus spin-orbit coupling interactions on tunnelling through two-dimensional magnetic quantum systems. It is showed that not only Rashba spin-orbit coupling but also Dresselhaus one can affect spin tunnelling properties greatly in such a quantum system. The transmission possibility, the spin polarization and the conductance are obviously oscillated with both coupling strengths. High spin polarization, conductance and magnetic conductance of the structure can be obtained by modulating either Rashba or Dresselhaus coupling strength

  13. Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

    International Nuclear Information System (INIS)

    Peter, A. John; Lee, Chang Woo

    2012-01-01

    Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa x Sb 1−x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration

  14. Magnetic reconstruction induced magnetoelectric coupling and spin-dependent tunneling in Ni/KNbO3/Ni multiferroic tunnel junctions

    International Nuclear Information System (INIS)

    Zhang, Hu; Dai, Jian-Qing; Song, Yu-Min

    2016-01-01

    We investigate the magnetoelectric coupling and spin-polarized tunneling in Ni/KNbO 3 /Ni multiferroic tunnel junctions with asymmetric interfaces based on density functional theory. The junctions have two stable polarization states. We predict a peculiar magnetoelectric effect in such junctions originating from the magnetic reconstruction of Ni near the KO-terminated interface. This reconstruction is induced by the reversal of the ferroelectric polarization of KNbO 3 . Furthermore, the change in the magnetic ordering filters the spin-dependent current. This effect leads to a change in conductance by about two orders of magnitude. As a result we obtain a giant tunneling electroresistance effect. In addition, there exist sizable tunneling magnetoresistance effects for two polarization states. - Highlights: • We study the ME coupling and electron tunneling in Ni/KNbO 3 /Ni junctions. • There is magnetic reconstruction of Ni atoms near the KO-terminated interface. • A peculiar magnetoelectric coupling effect is obtained. • Predicted giant tunneling electroresistance effects.

  15. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J.; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr2VO3FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C4 (2 ×2 ) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C4 (2 ×2 ) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C4 state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  16. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  17. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-10-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  18. Spin-polarized scanning tunneling microscopy of magnetic nanostructures at the example of bcc-Co/Fe(110), Fe/Mo(110), and copper phthalocyanine/Fe(1110); Spinpolarisierte Rastertunnelmikroskopie magnetischer Nanostrukturen am Beispiel von bcc-Co/Fe(110), Fe/Mo(110) und Kupfer-Phthalocyanin/Fe(110)

    Energy Technology Data Exchange (ETDEWEB)

    Methfessel, Torsten

    2010-12-09

    This thesis provides an introduction into the technique of spin-polarized scanning tunnelling microscopy and spectroscopy as an experimental method for the investigation of magnetic nanostructures. Experimental results for the spin polarized electronic structure depending on the crystal structure of ultrathin Co layers, and depending on the direction of the magnetization for ultrathin Fe layers are presented. High-resolution measurements show the position-dependent spin polarization on a single copper-phthalocyanine molecule deposited on a ferromagnetic surface. Co was deposited by molecular beam epitaxy on the (110) surface of the bodycentered cubic metals Cr and Fe. In contrast to previous reports in the literature only two layers of Co can be stabilized in the body-centered cubic (bcc) structure. The bcc-Co films on the Fe(110) surface show no signs of epitaxial distortions. Thicker layers reconstruct into a closed-packed structure (hcp / fcc). The bcc structure increases the spin-polarization of Co to P=62 % in comparison to hcp-Co (P=45 %). The temperature-dependent spin-reorientation of ultrathin Fe/Mo(110) films was investigated by spin-polarized spectroscopy. A reorientation of the magnetic easy axis from the [110] direction along the surface normal to the in-plane [001] axis is observed at T (13.2{+-}0.5) K. This process can be identified as a discontinuous reorientation transition, revealing two simultaneous minima of the free energy in a certain temperature range. The electronic structure of mono- and double-layer Fe/Mo(110) shows a variation with the reorientation of the magnetic easy axis and with the direction of the magnetization. The investigation of the spin-polarized charge transport through a copper-phthalocyanine molecule on the Fe/Mo(110) surface provides an essential contribution to the understanding of spin-transport at the interface between metal and organic molecule. Due to the interaction with the surface of the metal the HOMO-LUMO energy

  19. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    Science.gov (United States)

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

  20. Dynamics of spin-flip photon-assisted tunneling

    NARCIS (Netherlands)

    Braakman, F.R.; Danon, J.; Schreiber, L.R.; Wegscheider, W.; Vandersypen, L.M.K.

    2014-01-01

    We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under

  1. Optical pumping production of spin polarized hydrogen

    International Nuclear Information System (INIS)

    Knize, R.J.; Happer, W.; Cecchi, J.L.

    1984-01-01

    There has been much interest recently in the production of large quantities of spin polarized hydrogen in various fields including controlled fusion, quantum fluids, high energy, and nuclear physics. One promising method for the development of large quantities of spin polarized hydrogen is the utilization of optical pumping with a laser. Optical pumping is a process where photon angular momentum is converted into electron and nuclear spin. The advent of tunable CW dye lasers (approx. 1 watt) allow the production of greater than 10 18 polarized atoms/sec. We have begun a program at Princeton to investigate the physics and technology of using optical pumping to produce large quantities of spin polarized hydrogen. Initial experiments have been done in small closed glass cells. Eventually, a flowing system, open target, or polarized ion source could be constructed

  2. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.

    2015-09-21

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

  3. Limitations of optically pumped spin-exchange-polarized targets

    Science.gov (United States)

    Walker, T.; Anderson, L. W.

    1993-12-01

    The effects of spin-exchange collisions on the polarization of dense spin-polarized samples of hydrogen and deuterium are analyzed. It is shown that even in large magnetic fields spin-exchange collisions transfer angular momentum between the electrons and the nuclei. This effect has important implications for the operation of spin-polarized targets and sources of hydrogen and deuterium. For the specific case of sources that are spin-polarized by spin-exchange collisions with optically pumped alkali atoms, spin-exchange not only polarizes the hydrogen and deuterium electron spins, but polarizes the nuclear spins as well.

  4. Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

    Science.gov (United States)

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

  5. Spin-dependent tunneling recombination in heterostructures with a magnetic layer

    Energy Technology Data Exchange (ETDEWEB)

    Denisov, K. S., E-mail: denisokonstantin@gmail.com; Rozhansky, I. V.; Averkiev, N. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lähderanta, E. [Lappeenranta University of Technology (Finland)

    2017-01-15

    We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.

  6. Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

    KAUST Repository

    Zhang, Qian

    2015-05-27

    We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

  7. Quantum Adiabatic Algorithms and Large Spin Tunnelling

    Science.gov (United States)

    Boulatov, A.; Smelyanskiy, V. N.

    2003-01-01

    We provide a theoretical study of the quantum adiabatic evolution algorithm with different evolution paths proposed in this paper. The algorithm is applied to a random binary optimization problem (a version of the 3-Satisfiability problem) where the n-bit cost function is symmetric with respect to the permutation of individual bits. The evolution paths are produced, using the generic control Hamiltonians H (r) that preserve the bit symmetry of the underlying optimization problem. In the case where the ground state of H(0) coincides with the totally-symmetric state of an n-qubit system the algorithm dynamics is completely described in terms of the motion of a spin-n/2. We show that different control Hamiltonians can be parameterized by a set of independent parameters that are expansion coefficients of H (r) in a certain universal set of operators. Only one of these operators can be responsible for avoiding the tunnelling in the spin-n/2 system during the quantum adiabatic algorithm. We show that it is possible to select a coefficient for this operator that guarantees a polynomial complexity of the algorithm for all problem instances. We show that a successful evolution path of the algorithm always corresponds to the trajectory of a classical spin-n/2 and provide a complete characterization of such paths.

  8. Spin interference of neutrons tunneling through magnetic thin films

    International Nuclear Information System (INIS)

    Hino, Masahiro; Achiwa, Norio; Tasaki, Seiji; Ebisawa, Toru; Akiyoshi, Tsunekazu; Kawai, Takeshi.

    1996-01-01

    Larmor precession of a neutron spin is represented as the superposition of the wave functions of the two Stern-Gerlach states ↑ and ↓. A transverse neutron spin echo (NSE) spectrometer can hence be used as a neutron spin interferometer (NSI) by setting a magnetic film, such as iron and permalloy45 (Fe 55 Ni 45 ), thin enough to permit tunneling at an incident angle above and below the critical angle of the total reflection in the Larmor precession field. The NSI can be used to study spin coherent superposition and rotation of the Larmor precession through a magnetic thin film for a tunnelingspin neutron and a non-tunnelingspin neutron and to get the tunneling time using Larmor clock. The NSI experiments were carried out to measure the shifts of NSE signals transmitted through magnetic iron films with thicknesses of 200 and 400 A and those magnetic permalloy45 films with thicknesses of 200 and 400 A, respectively, as a function of the incident angle. Then even in tunnelingspin neutron and non-tunnelingspin neutron, NSE signal was observed. The phase delay was measured in iron and permalloy45 films with thickness of 200 A, and the tunneling time using Larmor clock was estimated to be 4 ± 0.6 x 10 -9 sec. (author)

  9. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  10. Velocity barrier-controlled of spin-valley polarized transport in monolayer WSe2 junction

    Science.gov (United States)

    Qiu, Xuejun; Lv, Qiang; Cao, Zhenzhou

    2018-05-01

    In this work, we have theoretically investigated the influence of velocity barrier on the spin-valley polarized transport in monolayer (ML) WSe2 junction with a large spin-orbit coupling (SOC). Both the spin-valley resolved transmission probabilities and conductance are strong dependent on the velocity barrier, as the velocity barrier decreases to 0.06, a spin-valley polarization of exceeding 90% is observed, which is distinct from the ML MoS2 owing to incommensurable SOC. In addition, the spin-valley polarization is further increased above 95% in a ML WSe2 superlattice, in particular, it's found many extraordinary velocity barrier-dependent transport gaps for multiple barrier due to evanescent tunneling. Our results may open an avenue for the velocity barrier-controlled high-efficiency spin and valley polarizations in ML WSe2-based electronic devices.

  11. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

    Science.gov (United States)

    Burton, J D; Tsymbal, E Y

    2011-04-15

    A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

  12. Instantons and magnetization tunneling: Beyond the giant-spin approximation

    International Nuclear Information System (INIS)

    Florez, J.M.; Vargas, P.; Nunez, Alvaro S.

    2009-01-01

    In this work we show that commonly neglected fluctuations of the net total spin of a molecular nanomagnet strongly modified its tunneling properties and provide a scenario to explain some discrepancies between theory and experiment. Starting off from an effective spin Hamiltonian, we study the quantum tunneling of the magnetization of molecular nanomagnets in the regime where the giant-spin approximation is breaking down. This study is done using an instanton description of the tunneling path. The instanton is calculated considering its coupling to quantum fluctuations.

  13. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  14. Inelastic electron tunneling spectroscopy of a single nuclear spin.

    Science.gov (United States)

    Delgado, F; Fernández-Rossier, J

    2011-08-12

    Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

  15. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

    Science.gov (United States)

    Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

    2011-03-28

    Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:

  16. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

    Directory of Open Access Journals (Sweden)

    Ma Jing-Min

    2011-01-01

    Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:

  17. Spin-polarized deuterium in magnetic traps

    International Nuclear Information System (INIS)

    Koelman, J.M.V.A.; Stoof, H.T.C.; Verhaar, B.J.; Walraven, J.T.M.

    1987-01-01

    We have calculated the spin-exchange two-body rate constants associated with the population dynamics of the hyperfine levels of atomic deuterium as a function of magnetic field in the Boltzmann zero-temperature limit. Results indicate that a gas of low-field--seeking deuterium atoms trapped in a static magnetic field minimum decays rapidly into an ultrastable gas of doubly spin-polarized deuterium. We also discuss the temperature dependence of various effects

  18. Tunneling between edge states in a quantum spin Hall system.

    Science.gov (United States)

    Ström, Anders; Johannesson, Henrik

    2009-03-06

    We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

  19. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  20. Collective effects in spin polarized plasmas

    International Nuclear Information System (INIS)

    Coppi, B.; Cowley, S.; Detragiache, P.; Kulsrud, R.; Pegoraro, F.

    1984-10-01

    A fusing plasma with coherently polarized spin nuclei can be subject to instabilities due to the anisotropy of the reaction product distributions in velocity space, which is a result of their polarization. The characteristics of these instabilities depend strongly on the plasma spatial inhomogeneities and a significant rate of spin depolarization can be produced by them if adequate fluctuation amplitudes are reached. The results of the relevant analysis are, in addition, of interest for plasma heating processes with frequencies in the range of the cyclotron frequencies of the considered nuclei

  1. Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

    International Nuclear Information System (INIS)

    Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

    2012-01-01

    Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

  2. Electron-Spin Filters Would Offer Spin Polarization Greater than 1

    Science.gov (United States)

    Ting, David Z.

    2009-01-01

    A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

  3. Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

    International Nuclear Information System (INIS)

    Yu Zhaoxian; Jiao Zhiyong

    2004-01-01

    In this Letter, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-±1, spin-0 and spin-±2 exhibit the step structure under the external cosinusoidal magnetic field, respectively, but there do not exist step structure among spin-±1 and spin-±2. The tunneling current among spin-±1 and spin-±2 may exhibit periodically oscillation behavior, but among spin-0 and spin-±1, spin-0 and spin-±2, the tunneling currents exhibit irregular oscillation behavior

  4. Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

    Science.gov (United States)

    Song, Yipu; Schmitt, Andrew L; Jin, Song

    2008-08-01

    Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

  5. Spin Heat Accumulation Induced by Tunneling from a Ferromagnet

    NARCIS (Netherlands)

    Vera-Marun, I.J.; Wees, B.J. van; Jansen, R.

    2014-01-01

    An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the

  6. Noise in tunneling spin current across coupled quantum spin chains

    OpenAIRE

    Aftergood, Joshua; Takei, So

    2017-01-01

    We theoretically study the spin current and its dc noise generated between two spin-1/2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a conc...

  7. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-10-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

  8. Theory of single-spin inelastic tunneling spectroscopy.

    Science.gov (United States)

    Fernández-Rossier, J

    2009-06-26

    I show that recent experiments of inelastic scanning tunneling spectroscopy of single and a few magnetic atoms are modeled with a phenomenological spin-assisted tunneling Hamiltonian so that the inelastic dI/dV line shape is related to the spin spectral weight of the magnetic atom. This accounts for the spin selection rules and dI/dV spectra observed experimentally for single Fe and Mn atoms deposited on Cu2N. In the case of chains of Mn atoms it is found necessary to include both first and second-neighbor exchange interactions as well as single-ion anisotropy.

  9. Polarization transfer from polarized nuclear spin to μ- spin in muonic atom

    International Nuclear Information System (INIS)

    Kuno, Yoshitaka; Nagamine, Kanetada; Yamazaki, Toshimitsu.

    1987-02-01

    A theoretical study of polarization transfer from an initially-polarized nuclear spin to a μ - spin in a muonic atom is given. The switching of the hyperfine interaction at excited muonic states as well as at the ground 1s state is taken into account. The upper state of hyperfine doublet at the muonic 1s state is considered to proceed down to the lower state. It is found that as the hyperfine interaction becomes effective at higher excited muonic orbitals, a less extent of polarization is transferred from the nuclear spin to the μ - spin. The theoretical values obtained are compared with the recent experiment of μ - repolarization in a polarized 209 Bi target. (author)

  10. Efficient spin transitions in inelastic electron tunneling spectroscopy.

    Science.gov (United States)

    Lorente, Nicolás; Gauyacq, Jean-Pierre

    2009-10-23

    The excitation of the spin degrees of freedom of an adsorbed atom by tunneling electrons is computed using strong coupling theory. Recent measurements [Heinrich, Science 306, 466 (2004)] reveal that electron currents in a magnetic system efficiently excite its magnetic moments. Our theory shows that the incoming electron spin strongly couples with that of the adsorbate so that memory of the initial spin state is lost, leading to large excitation efficiencies. First-principles transmissions are evaluated in quantitative agreement with the experiment.

  11. Spin tunnelling dynamics for spin-1 Bose-Einstein condensates in a swept magnetic field

    International Nuclear Information System (INIS)

    Wang Guanfang; Fu Libin; Liu Jie

    2008-01-01

    We investigate the spin tunnelling of spin-1 Bose-Einstein condensates in a linearly swept magnetic field with a mean-field treatment. We focus on the two typical alkali Bose atoms 87 Rb and 23 Na condensates and study their tunnelling dynamics according to the sweep rates of the external magnetic fields. In the adiabatic (i.e. slowly sweeping) and sudden (i.e. fast sweeping) limits, no tunnelling is observed. For the case of moderate sweep rates, the tunnelling dynamics is found to be very sensitive to the sweep rates, so the plots of tunnelling probability versus sweep rate only become resolvable at a resolution of 10 -4 G s -1 . Moreover, a conserved quantity standing for the magnetization in experiments is found to affect dramatically the dynamics of the spin tunnelling. Theoretically we have given a complete interpretation of the above findings, and our studies could stimulate the experimental study of spinor Bose-Einstein condensates

  12. Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

    International Nuclear Information System (INIS)

    Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

    2009-01-01

    Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

  13. Spin-polarized light-emitting diodes based on organic bipolar spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

    2017-10-25

    Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

  14. Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

    International Nuclear Information System (INIS)

    Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

    2010-01-01

    The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

  15. Tunnel splitting in biaxial spin models investigated with spin-coherent-state path integrals

    International Nuclear Information System (INIS)

    Chen Zhide; Liang, J.-Q.; Pu, F.-C.

    2003-01-01

    Tunnel splitting in biaxial spin models is investigated with a full evaluation of the fluctuation functional integrals of the Euclidean kernel in the framework of spin-coherent-state path integrals which leads to a magnitude of tunnel splitting quantitatively comparable with the numerical results in terms of diagonalization of the Hamilton operator. An additional factor resulted from a global time transformation converting the position-dependent mass to a constant one seems to be equivalent to the semiclassical correction of the Lagrangian proposed by Enz and Schilling. A long standing question whether the spin-coherent-state representation of path integrals can result in an accurate tunnel splitting is therefore resolved

  16. Low-resistance spin injection into silicon using graphene tunnel barriers.

    Science.gov (United States)

    van 't Erve, O M J; Friedman, A L; Cobas, E; Li, C H; Robinson, J T; Jonker, B T

    2012-11-01

    Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore's law. Ferromagnetic metals are ideal contacts for spin injection and detection, but the intervening tunnel barrier required to accommodate the large difference in conductivity introduces defects, trapped charge and material interdiffusion, which severely compromise performance. Here, we show that single-layer graphene successfully circumvents the classic issue of conductivity mismatch between a metal and a semiconductor for electrical spin injection and detection, providing a highly uniform, chemically inert and thermally robust tunnel barrier. We demonstrate electrical generation and detection of spin accumulation in silicon above room temperature, and show that the contact resistance-area products are two to three orders of magnitude lower than those achieved with oxide tunnel barriers on silicon substrates with identical doping levels. Our results identify a new route to low resistance-area product spin-polarized contacts, a key requirement for semiconductor spintronic devices that rely on two-terminal magnetoresistance, including spin-based transistors, logic and memory.

  17. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

    2015-09-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  18. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

    2015-01-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

  19. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Clément, P.-Y.; Baraduc, C., E-mail: claire.baraduc@cea.fr; Chshiev, M.; Diény, B. [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, INAC-SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Ducruet, C. [Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France); Vila, L. [Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)

    2015-09-07

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  20. Noise in tunneling spin current across coupled quantum spin chains

    Science.gov (United States)

    Aftergood, Joshua; Takei, So

    2018-01-01

    We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.

  1. Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

  2. Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling.

    Science.gov (United States)

    Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo

    2015-07-01

    We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

  3. Bias dependence of tunnel magnetoresistance in spin filtering tunnel junctions: Experiment and theory

    Science.gov (United States)

    Lüders, U.; Bibes, M.; Fusil, S.; Bouzehouane, K.; Jacquet, E.; Sommers, C. B.; Contour, J.-P.; Bobo, J.-F.; Barthélémy, A.; Fert, A.; Levy, P. M.

    2007-10-01

    A spin filter is a type of magnetic tunnel junction in which only one of the electrodes is magnetic and the insulating barrier is ferro- or ferrimagnetic. We report on spin-dependent transport measurements and their theoretical analysis in epitaxial spin filters integrating a tunnel barrier of the high-Curie-temperature ferrimagnetic spinel NiFe2O4 , with half-metallic La2/3Sr1/3MnO3 and Au electrodes. A positive tunnel magnetoresonance of up to ˜50% is obtained at low temperature, which we find decreases with bias voltage. In view of these experimental results, we propose a theoretical treatment of the transport properties of spin filters with epitaxial magnetic barriers, based on an elliptical variation of the decay rates within the spin-dependent gaps in analogy with what was calculated for nonmagnetic barrier materials such as MgO or SrTiO3 . Whereas the spin filtering efficiency for zero bias is of one sign, we show that this can easily change with bias; the degree of change hinges on the energy variation of the majority and minority spin decay rates of the transmission across the barrier. We point out some shortcomings of approaches based on models in which the transmission is related to spin-dependent barrier heights, and some implications for future experimental and theoretical research on spin filters.

  4. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  5. Distinction of nuclear spin states with the scanning tunneling microscope.

    Science.gov (United States)

    Natterer, Fabian Donat; Patthey, François; Brune, Harald

    2013-10-25

    We demonstrate rotational excitation spectroscopy with the scanning tunneling microscope for physisorbed H(2) and its isotopes HD and D(2). The observed excitation energies are very close to the gas phase values and show the expected scaling with the moment of inertia. Since these energies are characteristic for the molecular nuclear spin states we are able to identify the para and ortho species of hydrogen and deuterium, respectively. We thereby demonstrate nuclear spin sensitivity with unprecedented spatial resolution.

  6. Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

    Science.gov (United States)

    Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

    2017-09-01

    In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

  7. Dark states in spin-polarized transport through triple quantum dot molecules

    Science.gov (United States)

    Wrześniewski, K.; Weymann, I.

    2018-02-01

    We study the spin-polarized transport through a triple-quantum-dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique, including up to the second order of perturbation expansion with respect to the tunnel coupling. The emphasis is put on the impact of dark states on spin-resolved transport characteristics. It is shown that the interplay of coherent population trapping and cotunneling processes results in a highly nontrivial behavior of the tunnel magnetoresistance, which can take negative values. Moreover, a super-Poissonian shot noise is found in transport regimes where the current is blocked by the formation of dark states, which can be additionally enhanced by spin dependence of tunneling processes, depending on the magnetic configuration of the device. The mechanisms leading to those effects are thoroughly discussed.

  8. Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

    OpenAIRE

    Yu, Zhao-xian; Jiao, Zhi-yong

    2003-01-01

    In this paper, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-$\\pm1$, spin-0 and spin-$\\pm2$ exhibit the step structure under the external cosinusoidal magnetic field respectively, but there do not exist step structure among spin-$\\pm1$ and spin-$\\pm2$. The tunneling current among spin-$\\pm1$ and spin-$\\pm2$ may exhibit periodically oscillation behavior, but among spin-0 and spin-$\\p...

  9. Nuclear spin polarized H and D by means of spin-exchange optical pumping

    Science.gov (United States)

    Stenger, Jörn; Grosshauser, Carsten; Kilian, Wolfgang; Nagengast, Wolfgang; Ranzenberger, Bernd; Rith, Klaus; Schmidt, Frank

    1998-01-01

    Optically pumped spin-exchange sources for polarized hydrogen and deuterium atoms have been demonstrated to yield high atomic flow and high electron spin polarization. For maximum nuclear polarization the source has to be operated in spin temperature equilibrium, which has already been demonstrated for hydrogen. In spin temperature equilibrium the nuclear spin polarization PI equals the electron spin polarization PS for hydrogen and is even larger than PS for deuterium. We discuss the general properties of spin temperature equilibrium for a sample of deuterium atoms. One result are the equations PI=4PS/(3+PS2) and Pzz=PSṡPI, where Pzz is the nuclear tensor polarization. Furthermore we demonstrate that the deuterium atoms from our source are in spin temperature equilibrium within the experimental accuracy.

  10. Quantum description of spin tunneling in magnetic molecules

    Science.gov (United States)

    Galetti, D.

    2007-01-01

    Starting from a phenomenological Hamiltonian originally written in terms of angular momentum operators we derive a new quantum angle-based Hamiltonian that allows for a discussion on the quantum spin tunneling. The study of the applicability of the present approach, carried out in calculations with a soluble quasi-spin model, shows that we are allowed to use our method in the description of physical systems such as the Mn12-acetate molecule, as well as the octanuclear iron cluster, Fe8, in a reliable way. With the present description the interpretation of the spin tunneling is seen to be direct, the spectra and energy barriers of those systems are obtained, and it is shown that they agree with the experimental ones.

  11. A frozen spin polarized target for S134

    CERN Multimedia

    1974-01-01

    The CERN-ETH, Zurich-Helsinki-Imperial College-Southampton Collaboration used a frozen spin polarized target together with the ETH spectrometer magnet to study spin effects (S134). Beam was d31 in South Hall

  12. Robust techniques for polarization and detection of nuclear spin ensembles

    Science.gov (United States)

    Scheuer, Jochen; Schwartz, Ilai; Müller, Samuel; Chen, Qiong; Dhand, Ish; Plenio, Martin B.; Naydenov, Boris; Jelezko, Fedor

    2017-11-01

    Highly sensitive nuclear spin detection is crucial in many scientific areas including nuclear magnetic resonance spectroscopy, magnetic resonance imaging (MRI), and quantum computing. The tiny thermal nuclear spin polarization represents a major obstacle towards this goal which may be overcome by dynamic nuclear spin polarization (DNP) methods. The latter often rely on the transfer of the thermally polarized electron spins to nearby nuclear spins, which is limited by the Boltzmann distribution of the former. Here we utilize microwave dressed states to transfer the high (>92 % ) nonequilibrium electron spin polarization of a single nitrogen-vacancy center (NV) induced by short laser pulses to the surrounding 13C carbon nuclear spins. The NV is repeatedly repolarized optically, thus providing an effectively infinite polarization reservoir. A saturation of the polarization of the nearby nuclear spins is achieved, which is confirmed by the decay of the polarization transfer signal and shows an excellent agreement with theoretical simulations. Hereby we introduce the polarization readout by polarization inversion method as a quantitative magnetization measure of the nuclear spin bath, which allows us to observe by ensemble averaging macroscopically hidden polarization dynamics like Landau-Zener-Stückelberg oscillations. Moreover, we show that using the integrated solid effect both for single- and double-quantum transitions nuclear spin polarization can be achieved even when the static magnetic field is not aligned along the NV's crystal axis. This opens a path for the application of our DNP technique to spins in and outside of nanodiamonds, enabling their application as MRI tracers. Furthermore, the methods reported here can be applied to other solid state systems where a central electron spin is coupled to a nuclear spin bath, e.g., phosphor donors in silicon and color centers in silicon carbide.

  13. Widespread spin polarization effects in photoemission from topological insulators

    Energy Technology Data Exchange (ETDEWEB)

    Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.

    2011-06-22

    High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

  14. Enhanced spin Hall effect of tunneling light in hyperbolic metamaterial waveguide.

    Science.gov (United States)

    Tang, Tingting; Li, Chaoyang; Luo, Li

    2016-08-01

    Giant enhancement of spin Hall effect of tunneling light (SHETL) is theoretically proposed in a frustrated total internal reflection (FTIR) structure with hyperbolic metamaterial (HMM). We calculate the transverse shift of right-circularly polarized light in a SiO2-air-HMM-air-SiO2 waveguide and analyze the physical mechanism of the enhanced SHETL. The HMM anisotropy can greatly increase the transverse shift of polarized light even though HMM loss might reduce it. Compared with transverse shift of transmitted light through a single HMM slab with ZnAlO/ZnO multilayer, the maximum transverse shift of tunneling light through a FTIR structure with identical HMM can be significantly enlarged by more than three times which reaches -38 μm without any amplification method.

  15. Electronic transport through EuO spin-filter tunnel junctions

    KAUST Repository

    Jutong, Nuttachai

    2012-11-12

    Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

  16. Spin-polarized free electron beam interaction with radiation and superradiant spin-flip radiative emission

    Directory of Open Access Journals (Sweden)

    A. Gover

    2006-06-01

    Full Text Available The problems of spin-polarized free-electron beam interaction with electromagnetic wave at electron-spin resonance conditions in a magnetic field and of superradiant spin-flip radiative emission are analyzed in the framework of a comprehensive classical model. The spontaneous emission of spin-flip radiation from electron beams is very weak. We show that the detectivity of electron spin resonant spin-flip and combined spin-flip/cyclotron-resonance-emission radiation can be substantially enhanced by operating with ultrashort spin-polarized electron beam bunches under conditions of superradiant (coherent emission. The proposed radiative spin-state modulation and the spin-flip radiative emission schemes can be used for control and noninvasive diagnostics of polarized electron/positron beams. Such schemes are of relevance in important scattering experiments off nucleons in nuclear physics and off magnetic targets in condensed matter physics.

  17. Quantum revivals and magnetization tunneling in effective spin systems

    Science.gov (United States)

    Krizanac, M.; Altwein, D.; Vedmedenko, E. Y.; Wiesendanger, R.

    2016-03-01

    Quantum mechanical objects or nano-objects have been proposed as bits for information storage. While time-averaged properties of magnetic, quantum-mechanical particles have been extensively studied experimentally and theoretically, experimental investigations of the real time evolution of magnetization in the quantum regime were not possible until recent developments in pump-probe techniques. Here we investigate the quantum dynamics of effective spin systems by means of analytical and numerical treatments. Particular attention is paid to the quantum revival time and its relation to the magnetization tunneling. The quantum revival time has been initially defined as the recurrence time of a total wave-function. Here we show that the quantum revivals of wave-functions and expectation values in spin systems may be quite different which gives rise to a more sophisticated definition of the quantum revival within the realm of experimental research. Particularly, the revival times for integer spins coincide which is not the case for half-integer spins. Furthermore, the quantum revival is found to be shortest for integer ratios between the on-site anisotropy and an external magnetic field paving the way to novel methods of anisotropy measurements. We show that the quantum tunneling of magnetization at avoided level crossing is coherent to the quantum revival time of expectation values, leading to a connection between these two fundamental properties of quantum mechanical spins.

  18. Surface spin tunneling and heat dissipation in magnetic nanoparticles

    Science.gov (United States)

    Palakkal, Jasnamol P.; Obula Reddy, Chinna; Paulose, Ajeesh P.; Sankar, Cheriyedath Raj

    2018-03-01

    Quantum superparamagnetic state is observed in ultra-fine magnetic particles, which is often experimentally identified by a significant hike in magnetization towards low temperatures much below the superparamagnetic blocking temperature. Here, we report experimentally observed surface spin relaxation at low temperatures in hydrated magnesium ferrite nanoparticles of size range of about 5 nm. We observed time dependent oscillatory magnetization of the sample below 2.5 K, which is attributed to surface spin tunneling. Interestingly, we observed heat dissipation during the process by using an external thermometer.

  19. Spin texture of Bi2Se3 thin films in the quantum tunneling limit.

    Science.gov (United States)

    Landolt, Gabriel; Schreyeck, Steffen; Eremeev, Sergey V; Slomski, Bartosz; Muff, Stefan; Osterwalder, Jürg; Chulkov, Evgueni V; Gould, Charles; Karczewski, Grzegorz; Brunner, Karl; Buhmann, Hartmut; Molenkamp, Laurens W; Dil, J Hugo

    2014-02-07

    By means of spin- and angle-resolved photoelectron spectroscopy we studied the spin structure of thin films of the topological insulator Bi2Se3 grown on InP(111). For thicknesses below six quintuple layers the spin-polarized metallic topological surface states interact with each other via quantum tunneling and a gap opens. Our measurements show that the resulting surface states can be described by massive Dirac cones which are split in a Rashba-like manner due to the substrate induced inversion asymmetry. The inner and the outer Rashba branches have distinct localization in the top and the bottom part of the film, whereas the band apices are delocalized throughout the entire film. Supported by calculations, our observations help in the understanding of the evolution of the surface states at the topological phase transition and provide the groundwork for the realization of two-dimensional spintronic devices based on topological semiconductors.

  20. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-01-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

  1. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    Abstract. A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different ...

  2. Effect of spin polarization on the structural properties and bond ...

    Indian Academy of Sciences (India)

    coupled to semi-empirical hardness theory proved effective in hardness prediction for the metal borides which agree well with the experimental values. These results would help to gain insight into the spin-polarized effect on the structural and bond hardness. Keywords. Iron boride; DFT; spin polarized; critical pressure; ...

  3. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    A theoretical model is presented in this paper for degree of spin polarization in alight emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and ...

  4. Detecting Spin-Polarized Currents in Ballistic Nanostructures

    DEFF Research Database (Denmark)

    Potok, R.; Folk, J.; M. Marcus, C.

    2002-01-01

    We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact....

  5. Theory of inelastic electron tunneling from a localized spin in the impulsive approximation.

    Science.gov (United States)

    Persson, Mats

    2009-07-31

    A simple expression for the conductance steps in inelastic electron tunneling from spin excitations in a single magnetic atom adsorbed on a nonmagnetic metal surface is derived. The inelastic coupling between the tunneling electron and the spin is via the exchange coupling and is treated in an impulsive approximation using the Tersoff-Hamann approximation for the tunneling between the tip and the sample.

  6. Designing magnetic droplet soliton nucleation employing spin polarizer

    Science.gov (United States)

    Mohseni, Morteza; Mohseni, Majid

    2018-04-01

    We show by means of micromagnetic simulations that spin polarizer in nano-contact (NC) spin torque oscillators as the representative of the fixed layer in an orthogonal pseudo-spin valve can be employed to design and to control magnetic droplet soliton nucleation and dynamics. We found that using a tilted spin polarizer layer decreases the droplet nucleation time which is more suitable for high speed applications. However, a tilted spin polarizer increases the nucleation current and decreases the frequency stability of the droplet. Additionally, by driving the magnetization inhomogenously at the NC region, it is found that a tilted spin polarizer reduces the precession angle of the droplet and through an interplay with the Oersted field of the DC current, it breaks the spatial symmetry of the droplet profile. Our findings explore fundamental insight into nano-scale magnetic droplet soliton dynamics with potential tunability parameters for future microwave electronics.

  7. Transport Through a Precessing Spin Coupled to Noncollinearly Polarized Ferromagnetic Leads

    International Nuclear Information System (INIS)

    Wang Xianchao; Xin Zihua; Feng Liya

    2010-01-01

    The quantum electronic transport through a precessing magnetic spin coupled to noncollinearly polarized ferromagnetic leads (F-MS-F) has been studied in this paper. The nonequilibrium Green function approach is used to calculate local density of states (LDOS) and current in the presence of external bias. The characters of LDOS and the electronic current are obtained. The tunneling current is investigated for different precessing angle and different configurations of the magnetization of the leads. The investigation reveals that when the precessing angle takes θ < π/2 and negative bias is applied, the resonant tunneling current appears, otherwise, it appears when positive bias is applied. When the leads are totally polarized and the precessing angel takes 0, the tunneling current changes with the configuration of two leads; and it becomes zero when the two leads are antiparallel. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Neutron stars with spin polarized self-interacting dark matter

    OpenAIRE

    Rezaei, Zeinab

    2018-01-01

    Dark matter, one of the important portion of the universe, could affect the visible matter in neutron stars. An important physical feature of dark matter is due to the spin of dark matter particles. Here, applying the piecewise polytropic equation of state for the neutron star matter and the equation of state of spin polarized self-interacting dark matter, we investigate the structure of neutron stars which are influenced by the spin polarized self-interacting dark matter. The behavior of the...

  9. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    Jimy Encomendero

    2017-10-01

    Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

  10. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  11. Optically pumped electron spin polarized targets for use in the production of polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1979-01-01

    The production of relatively dense electron spin polarized alkali metal vapor targets by optical pumping with intense cw dye lasers is discussed. The target density and electron spin polarization depend on the dye laser intensity and bandwidth, the magnetic field at the target, and the electron spin depolarization time. For example in a magnetic field of 1.5 x 10 3 G, and using 1 W dye laser with a bandwidth of 10 10 Hz one can construct an electron spin polarized Na vapor target with a target thickness of 1.6 x 10 13 atoms/cm 2 and an average electron spin polarization of about 90% even though the Na atoms are completely depolarized at every wall collision. Possible uses of the electron spin polarized targets for the production of intense beams of polarized H - or 3 He - ions are discussed. (orig.)

  12. Suppression of tunneling by interference in half-integer--spin particles

    OpenAIRE

    Loss, Daniel; DiVincenzo, David P.; Grinstein, G.

    1992-01-01

    Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A coherent-state path integral calculation shows that this topological effect results from interference between tunneling paths.

  13. Resonant coherent quantum tunneling of the magnetization of spin-½ systems : Spin-parity effects

    NARCIS (Netherlands)

    García-Pablos, D.; García, N.; Raedt, H. De

    1997-01-01

    We perform quantum dynamical calculations to study the reversal of the magnetization for systems of a few spin-½ particles with a general biaxial anisotropy in the presence of an external magnetic field at T=0 and with no dissipation. Collective quantum tunneling of the magnetization is demonstrated

  14. Stimulated polarization wave process in spin 3/2 chains

    International Nuclear Information System (INIS)

    Furman, G. B.

    2007-01-01

    Stimulated wave of polarization, triggered by a flip of a single spin, presents a simple model of quantum amplification. Recently, it has been demonstrated that, in an idealized one-dimensional Ising spin 1/2 chain with nearest-neighbor interactions and realistic spin 1/2 chain including the natural dipole-dipole interactions, irradiated by a weak resonant transverse field, a wave of flipped spins can be triggered by a single spin flip. Here we focuse on control of polarization wave in chain of spin 3/2, where the nuclear quadrupole interaction is dominant. Results of simulations for 1D spin chains and rings with up to five spins are presented.

  15. An enhancement of spin polarization by multiphoton pumping in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2011-08-15

    Highlights: {yields} Multiphoton pumping and spin generation in semiconductors. {yields} Optical selection rules for inter-band transitions. {yields} Calculations of spin polarization using band-energy model and the second order perturbation theory. {yields} Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  16. An enhancement of spin polarization by multiphoton pumping in semiconductors

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2011-01-01

    Highlights: → Multiphoton pumping and spin generation in semiconductors. → Optical selection rules for inter-band transitions. → Calculations of spin polarization using band-energy model and the second order perturbation theory. → Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  17. Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Yin, Li; Wang, Xiaocha; Mi, Wenbo

    2018-01-01

    Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.

  18. Strong Linear Dichroism in Spin-Polarized Photoemission from Spin-Orbit-Coupled Surface States.

    Science.gov (United States)

    Bentmann, H; Maaß, H; Krasovskii, E E; Peixoto, T R F; Seibel, C; Leandersson, M; Balasubramanian, T; Reinert, F

    2017-09-08

    A comprehensive understanding of spin-polarized photoemission is crucial for accessing the electronic structure of spin-orbit coupled materials. Yet, the impact of the final state in the photoemission process on the photoelectron spin has been difficult to assess in these systems. We present experiments for the spin-orbit split states in a Bi-Ag surface alloy showing that the alteration of the final state with energy may cause a complete reversal of the photoelectron spin polarization. We explain the effect on the basis of ab initio one-step photoemission theory and describe how it originates from linear dichroism in the angular distribution of photoelectrons. Our analysis shows that the modulated photoelectron spin polarization reflects the intrinsic spin density of the surface state being sampled differently depending on the final state, and it indicates linear dichroism as a natural probe of spin-orbit coupling at surfaces.

  19. Quantum Entanglement of a Tunneling Spin with Mechanical Modes of a Torsional Resonator

    Directory of Open Access Journals (Sweden)

    D. A. Garanin

    2011-08-01

    Full Text Available We solve the Schrödinger equation for various quantum regimes describing a tunneling macrospin coupled to a torsional oscillator. The energy spectrum and freezing of spin tunneling are studied. Magnetic susceptibility, noise spectrum, and decoherence due to entanglement of spin and mechanical modes are computed. We show that the presence of a tunneling spin can be detected via splitting of the mechanical mode at the resonance. Our results apply to experiments with magnetic molecules coupled to nanoresonators.

  20. Bias dependence of spin transfer torque in Co2MnSi Heusler alloy based magnetic tunnel junctions

    Science.gov (United States)

    Zhang, Jie; Phung, Timothy; Pushp, Aakash; Ferrante, Yari; Jeong, Jaewoo; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Jiang, Yong; Parkin, Stuart S. P.

    2017-04-01

    Heusler compounds are of interest as electrode materials for use in magnetic tunnel junctions (MTJs) due to their half metallic character, which leads to 100% spin polarization and high tunneling magnetoresistance. Most work to date has focused on the improvements to tunneling magnetoresistance that can stem from the use of Heusler electrodes, while there is much less work investigating the influence of Heusler electrodes on the spin transfer torque properties of MTJs. Here, we investigate the bias dependence of the anti-damping like and field-like spin transfer torque components in both symmetric (Co2MnSi/MgO/Co2MnSi) and asymmetric (Co2MnSi/MgO/CoFe) structure Heusler based MTJs using spin transfer torque ferromagnetic resonance. We find that while the damping like torque is linear with respect to bias for both MTJ structures, the asymmetric MTJ structure has an additional linear component to the ordinarily quadratic field like torque bias dependence and that these results can be accounted for by a free electron tunneling model. Furthermore, our results suggest that the low damping and low saturation magnetization properties of Heusler alloys are more likely to lead significant improvements to spin torque switching efficiency rather than their half metallic character.

  1. Polarization of a stored beam by spin-filtering

    Energy Technology Data Exchange (ETDEWEB)

    Augustyniak, W. [National Centre for Nuclear Research, 00681 Warsaw (Poland); Barion, L. [Universita di Ferrara and INFN, 44122 Ferrara (Italy); Barsov, S. [St. Petersburg Nuclear Physics Institute, 188350 Gatchina (Russian Federation); Bechstedt, U. [Institut fuer Kernphysik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Juelich Center for Hadron Physics, 52425 Juelich (Germany); Benati, P.; Bertelli, S.; Carassiti, V. [Universita di Ferrara and INFN, 44122 Ferrara (Italy); Chiladze, D. [High Energy Physics Institute, Tbilisi State University, 0186 Tbilisi, Georgia (United States); Ciullo, G.; Contalbrigo, M.; Dalpiaz, P.F. [Universita di Ferrara and INFN, 44122 Ferrara (Italy); Dymov, S. [Physikalische Institute II, Universitaet Erlangen-Nuernberg, 91058 Erlangen (Germany); Laboratory of Nuclear Problems, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Engels, R. [Institut fuer Kernphysik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Juelich Center for Hadron Physics, 52425 Juelich (Germany); Erwen, W. [Juelich Center for Hadron Physics, 52425 Juelich (Germany); Zentralinstitut fuer Elektronik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Fiorini, M. [Universita di Ferrara and INFN, 44122 Ferrara (Italy); and others

    2012-11-15

    The PAX Collaboration has successfully performed a spin-filtering experiment with protons at the COSY-ring. The measurement allowed the determination of the spin-dependent polarizing cross section, that compares well with the theoretical prediction from the nucleon-nucleon potential. The test confirms that spin-filtering can be adopted as a method to polarize a stored beam and that the present interpretation of the mechanism in terms of the proton-proton interaction is correct. The outcome of the experiment is of utmost importance in view of the possible application of the method to polarize a beam of stored antiprotons.

  2. Tilted Foils Nuclear Spin Polarization at REX-ISOLDE

    CERN Document Server

    Törnqvist, Hans Toshihide

    2013-08-08

    This thesis will explain and summarize my work and involvement in experiments aimed at producing nuclear spin polarization of post-accelerated beams of ions with the tilted-foils technique at the REX-ISOLDE linear accelerator at CERN. Polarizing the nuclear spin of radioactive beams in particular may provide access to observables which may be difficult to obtain otherwise. Currently, the techniques commonly employed for nuclear spin polarization are restricted to specific nuclides and experimental measurement techniques. Tilted foils polarization may provide a new tool to extend the range of nuclides that can be polarized and the types of experiments that can be performed. The experiments rely not only on the production but also on the method to measure the degree of attained polarization. Two methods will be treated, based on particle scattering in Coulomb excitation that may be utilized for stable beams, and the $\\beta$-NMR that requires $\\beta$-decaying nuclei. The experimental setups and measurements will...

  3. Resonant tunneling of spin-wave packets via quantized states in potential wells.

    Science.gov (United States)

    Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O

    2007-09-21

    We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

  4. Polarized hyperons probe dynamics of quark spin

    International Nuclear Information System (INIS)

    Daniel S. Carman; T. S. Harry Lee; Mac Mestayer; Reinhard Schumacher

    2007-01-01

    Researchers at Jefferson Laboratory demonstrate how two analyses of the same data provide two plausible models of spin transfer in exclusive hyperon production, yielding quite different pictures of quark spin dynamics and challenging existing theories

  5. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    International Nuclear Information System (INIS)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-01-01

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

  6. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

    Science.gov (United States)

    Tang, Y.-H.; Chu, F.-C.; Kioussis, Nicholas

    2015-06-01

    We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds.

  7. Anomalous Tunneling of Spin Wave in Heisenberg Ferromagnet

    Science.gov (United States)

    Kato, Yusuke; Watabe, Shohei; Ohashi, Yoji

    2012-12-01

    The ferromagnetic spin wave (FSW) in classical Heisenberg chain exhibits the perfect transmission in the long-wavelength limit in the transmission-reflection problem with an inhomogeneity of exchange integral. In the presence of local magnetic field, on the other hand, FSW undergoes the perfect reflection in the long-wavelength limit. This difference in the long-wavelength limit is attributed to the symmetry property of the scatterers; it is crucial whether the potential preserves or breaks the spin rotation symmetry. Our result implies that the anomalous tunneling (i.e., perfect transmission in the low-energy limit) found both in scalar and spinor BECs is not specific to gapless modes in superfluids but is a common property shared with generic Nambu-Goldstone modes in the presence of a symmetry-preserving potential scatterer.

  8. Anomalous Tunneling of Spin Wave in Heisenberg Ferromagnet

    International Nuclear Information System (INIS)

    Kato, Yusuke; Watabe, Shohei; Ohashi, Yoji

    2012-01-01

    The ferromagnetic spin wave (FSW) in classical Heisenberg chain exhibits the perfect transmission in the long-wavelength limit in the transmission-reflection problem with an inhomogeneity of exchange integral. In the presence of local magnetic field, on the other hand, FSW undergoes the perfect reflection in the long-wavelength limit. This difference in the long-wavelength limit is attributed to the symmetry property of the scatterers; it is crucial whether the potential preserves or breaks the spin rotation symmetry. Our result implies that the anomalous tunneling (i.e., perfect transmission in the low-energy limit) found both in scalar and spinor BECs is not specific to gapless modes in superfluids but is a common property shared with generic Nambu-Goldstone modes in the presence of a symmetry-preserving potential scatterer.

  9. Physical limitations to efficient high-speed spin-torque switching in magnetic tunnel junctions

    Science.gov (United States)

    Heindl, R.; Rippard, W. H.; Russek, S. E.; Kos, A. B.

    2011-02-01

    We have investigated the physical limitations to efficient high-speed spin-torque switching by means of write error rates both experimentally as well as through macrospin simulations. The spin-torque-induced write operations were performed on in-plane MgO magnetic tunnel junctions. The write error rates were determined from up to 106 switching events as a function of pulse amplitude and duration (5 to 100 ns) for devices with different thermal stability factors. Both experiments and simulations show qualitatively similar results. In particular, the write error rates as a function of pulse voltage amplitude increase at higher rates for pulse durations below ≈50 ns. Simulations show that the write error rates can be reduced only to some extent by the use of materials with perpendicular anisotropy and reduced damping, whereas noncollinear orientation of the spin current polarization and the magnetic easy axis increases the write error rates. The cause for the write error rates is related to the underlying physics of spin-torque switching and the occurrence of the stagnation point on the magnetization switching trajectory where the spin-torque disappears and the device loses the energy needed to switch. The stagnation point can be accessed either during the initial magnetization distribution or by thermal diffusion during the switching process.

  10. Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

    Science.gov (United States)

    Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

    2017-11-01

    The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

  11. Generating highly polarized nuclear spins in solution using dynamic nuclear polarization

    DEFF Research Database (Denmark)

    Wolber, J.; Ellner, F.; Fridlund, B.

    2004-01-01

    A method to generate strongly polarized nuclear spins in solution has been developed, using Dynamic Nuclear Polarization (DNP) at a temperature of 1.2K, and at a field of 3.354T, corresponding to an electron spin resonance frequency of 94GHz. Trityl radicals are used to directly polarize 13C...... and other low-γ nuclei. Subsequent to the DNP process, the solid sample is dissolved rapidly with a warm solvent to create a solution of molecules with highly polarized nuclear spins. Two main applications are proposed: high-resolution liquid state NMR with enhanced sensitivity, and the use...

  12. Photoemission of Bi_{2}Se_{3} with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

    Directory of Open Access Journals (Sweden)

    J. Sánchez-Barriga

    2014-03-01

    Full Text Available Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50–70 eV with linear or circular polarization indeed probe the initial-state spin texture of Bi_{2}Se_{3} while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.

  13. Engineering the spin polarization of one-dimensional electrons

    Science.gov (United States)

    Yan, C.; Kumar, S.; Thomas, K.; See, P.; Farrer, I.; Ritchie, D.; Griffiths, J.; Jones, G.; Pepper, M.

    2018-02-01

    We present results of magneto-focusing on the controlled monitoring of spin polarization within a one-dimensional (1D) channel, and its subsequent effect on modulating the spin–orbit interaction (SOI) in a 2D GaAs electron gas. We demonstrate that electrons within a 1D channel can be partially spin polarized as the effective length of the 1D channel is varied in agreement with the theoretical prediction. Such polarized 1D electrons when injected into a 2D region result in a split in the odd-focusing peaks, whereas the even peaks remain unaffected (single peak). On the other hand, the unpolarized electrons do not affect the focusing spectrum and the odd and even peaks remain as single peaks, respectively. The split in odd-focusing peaks is evidence of direct measurement of spin polarization within a 1D channel, where each sub-peak represents the population of a particular spin state. Confirmation of the spin splitting is determined by a selective modulation of the focusing peaks due to the Zeeman energy in the presence of an in-plane magnetic field. We suggest that the SOI in the 2D regime is enhanced by a stream of polarized 1D electrons. The spatial control of spin states of injected 1D electrons and the possibility of tuning the SOI may open up a new regime of spin-engineering with application in future quantum information schemes.

  14. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.

    1992-01-01

    This report discusses the following topics relating to inertial confinement with spin polarized hydrogen targets: low temperature implementation of mating a target to omega; dilution-refrigerator cold-entry and retrieval system; target shell tensile strength characterization at low temperatures; and proton and deuteron spin-lattice relaxation measurements in HD in the millikelvin temperature range

  15. Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene

    OpenAIRE

    Daghofer, Maria; Zheng, Nan; Moreo, Adriana

    2010-01-01

    Magnetic impurities adsorbed on graphene are coupled magnetically via the itinerant electrons. This interaction opens a gap in the band structure of graphene. The result strongly depends on how the magnetic impurities are distributed. While random doping produces a semiconductor, if all or most impurities are located in the same sublattice, the spin degeneracy is removed and a spin-polarized semiconductor arises.

  16. Spin polarization in quantum dots by radiation field with circular polarization

    CERN Document Server

    Bulgakov, E N

    2001-01-01

    For circular quantum dot (QD) with account of the Razhba spin-orbit interaction (SOI) an exact energy spectrum is obtained. For the small SOI constant the Eigen functions of the QD are found. It is shown that application of radiation field with circular polarization lifts the Kramers degeneracy of the Eigen states of the QD. Effective spin polarization of transmitted electrons through the QD by radiation field with circular polarization is demonstrated

  17. Spin polarized Auger electron spectroscopy of Fe and Ni

    Science.gov (United States)

    Anilturk, O. S.; Koymen, A. R.

    2001-06-01

    Surface sensitive experiments, in which the spin-polarized electrons are involved, play an important role for magnetic characterization, since the spin-polarized electrons are fingerprints for the local magnetization. Scanning electron microscope with polarization analysis (SEMPA) is one of the most powerful tools to investigate the surface magnetic domain structure of magnetic materials. On the other hand, at energies high enough to generate a two-hole final state arising from Auger transitions, it is possible to observe the spin polarization of the Auger electrons. These electrons reveal element-specific local magnetic information, particularly valuable for surface magnetic studies with composite systems. By using the uniqueness of the UTA-SEMPA tool, one can obtain the magnetic domain picture and also perform spin-polarized Auger electron spectroscopy studies by probing a single domain at the surface. In this study, precisely knowing the probed domain, spin polarization of electrons from super Coster-Kronig MMM Auger emissions on Fe and Ni samples have been investigated. The polarization enhancement above the 3p(M23) threshold is observed on both samples.

  18. Spin polarized Auger electron spectroscopy of Fe and Ni

    International Nuclear Information System (INIS)

    Anilturk, O. S.; Koymen, A. R.

    2001-01-01

    Surface sensitive experiments, in which the spin-polarized electrons are involved, play an important role for magnetic characterization, since the spin-polarized electrons are fingerprints for the local magnetization. Scanning electron microscope with polarization analysis (SEMPA) is one of the most powerful tools to investigate the surface magnetic domain structure of magnetic materials. On the other hand, at energies high enough to generate a two-hole final state arising from Auger transitions, it is possible to observe the spin polarization of the Auger electrons. These electrons reveal element-specific local magnetic information, particularly valuable for surface magnetic studies with composite systems. By using the uniqueness of the UTA-SEMPA tool, one can obtain the magnetic domain picture and also perform spin-polarized Auger electron spectroscopy studies by probing a single domain at the surface. In this study, precisely knowing the probed domain, spin polarization of electrons from super Coster - Kronig MMM Auger emissions on Fe and Ni samples have been investigated. The polarization enhancement above the 3p(M 23 ) threshold is observed on both samples. [copyright] 2001 American Institute of Physics

  19. MAGNETISME ET TRANSPORT POLARISE EN SPIN DANS DES JONCTIONS TUNNEL MAGNETIQUES. UTILISATION DU TRANSPORT TUNNEL COMME UNE SONDE MICROMAGNETIQUE

    OpenAIRE

    TIUSAN, Coriolan

    2000-01-01

    F. Gautier J. Gregg J. de Boeck K. Ounadjela H. A. M. van den Berg B. Dieny E. Burzo M. Hehn; The spin dependent tunnelling effect in a ferromagnetic /insulator /ferromagnetic structure, which constitutes a magnetic tunnel junction, has regained much interest in the last years since it was demonstrated that the effect also takes place at room temperature. This makes magnetic tunnel junction important potential candidates for the application in micro-electronic devices, such as non-volatile me...

  20. Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions

    Science.gov (United States)

    Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran

    2018-02-01

    We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

  1. Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

    International Nuclear Information System (INIS)

    Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

    2003-01-01

    We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

  2. Design of a tensor polarized deuterium target polarized by spin-exchange with optically pumped NA

    International Nuclear Information System (INIS)

    Green, M.C.

    1984-01-01

    A proposed design for a tensor polarized deuterium target (approx. 10 15 atoms/cm 2 ) for nuclear physics studies in an electron storage ring accelerator is presented. The deuterium atoms undergo electron spin exchange with a highly polarized sodium vapor; this polarization is transferred to the deuterium nuclei via the hyperfine interaction. The deuterium nuclei obtain their tensor polarization through repeated electron spin exchange/hyperfine interactions. The sodium vapor polarization is maintained by standard optical pumping techniques. Model calculations are presented in detail leading to a discussion of the expected performance and the technical obstacles to be surmounted in the development of such a target

  3. Experiment on the melting pressure of spin polarized He3

    DEFF Research Database (Denmark)

    Chapellier, M.; Olsen, M.; Rasmussen, Finn Berg

    1981-01-01

    In liquid He in a Pomeranchuk cell, the melting curve has been observed to be suppressed, presumably in regions with a strong local spin polarization. In the temperature range 30-50 mK the observed suppression was 60-80 kPa. The corresponding local polarization is estimated, in a crude model, to ...

  4. Hole dynamics and spin currents after ionization in strong circularly polarized laser fields

    International Nuclear Information System (INIS)

    Barth, Ingo; Smirnova, Olga

    2014-01-01

    We apply the time-dependent analytical R-matrix theory to develop a movie of hole motion in a Kr atom upon ionization by strong circularly polarized field. We find rich hole dynamics, ranging from rotation to swinging motion. The motion of the hole depends on the final energy and the spin of the photoelectron and can be controlled by the laser frequency and intensity. Crucially, hole rotation is a purely non-adiabatic effect, completely missing in the framework of quasistatic (adiabatic) tunneling theories. We explore the possibility to use hole rotation as a clock for measuring ionization time. Analyzing the relationship between the relative phases in different ionization channels we show that in the case of short-range electron-core interaction the hole is always initially aligned along the instantaneous direction of the laser field, signifying zero delays in ionization. Finally, we show that strong-field ionization in circular fields creates spin currents (i.e. different flow of spin-up and spin-down density in space) in the ions. This phenomenon is intimately related to the production of spin-polarized electrons in strong laser fields Barth and Smirnova (2013 Phys. Rev. A 88 013401). We demonstrate that rich spin dynamics of electrons and holes produced during strong field ionization can occur in typical experimental conditions and does not require relativistic intensities or strong magnetic fields. (paper)

  5. A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

    Science.gov (United States)

    van't Erve, Olaf

    2014-03-01

    New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin-polarized

  6. Spin-polarized spin-orbit-split quantum-well states in a metal film

    Energy Technology Data Exchange (ETDEWEB)

    Varykhalov, Andrei; Sanchez-Barriga, Jaime; Gudat, Wolfgang; Eberhardt, Wolfgang; Rader, Oliver [BESSY Berlin (Germany); Shikin, Alexander M. [St. Petersburg State University (Russian Federation)

    2008-07-01

    Elements with high atomic number Z lead to a large spin-orbit coupling. Such materials can be used to create spin-polarized electronic states without the presence of a ferromagnet or an external magnetic field if the solid exhibits an inversion asymmetry. We create large spin-orbit splittings using a tungsten crystal as substrate and break the structural inversion symmetry through deposition of a gold quantum film. Using spin- and angle-resolved photoelectron spectroscopy, it is demonstrated that quantum-well states forming in the gold film are spin-orbit split and spin polarized up to a thickness of at least 10 atomic layers. This is a considerable progress as compared to the current literature which reports spin-orbit split states at metal surfaces which are either pure or covered by at most a monoatomic layer of adsorbates.

  7. Thin Scintillating Polarized Targets for Spin Physics

    Science.gov (United States)

    van den Brandt, B.; Bunyatova, E. I.; Hautle, P.; Konter, J. A.

    2003-07-01

    At PSI polarized scintillating targets are available since 1996. Proton polarizations of more than 80%, and deuteron polarizations of 25% in polystyrene-based scintillators can be reached under optimum conditions in a vertical dilution refrigerator with optical access, suited for nuclear and particle physics experiments. New preparation procedures allow to provide very thin polarizable scintillating targets and widen the spectrum of conceivable experiments.

  8. Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

    OpenAIRE

    Y Yousefi; H Fakhari; K Muminov; M R Benam

    2018-01-01

    Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3) generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons). For this SMM, it is established that the use of quadrupole excitation (g dependence) changes not only the location of the quenching points, but also the n...

  9. The effect of current-induced spin switching in the presence of quantum tunneling of magnetization

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2013-03-01

    Knowledge of transport properties of individual large-spin (S > 1 / 2) atoms/molecules exhibiting magnetic anisotropy is of key importance from the point of view of information processing technologies. The ultimate aim is to incorporate such objects as functional elements of spintronic devices, with the objective of employing spin-polarized currents to control the magnetic state of the system. In particular, for an atom/molecule with the predominant `easy-axis' uniaxial magnetic anisotropy this allows for switching the system's spin between two metastable states. However, the uniaxial component of magnetic anisotropy, underlying the magnetic bistability, is frequently accompanied by the transverse one, whose presence manifests, e.g., as quantum tunneling of magnetization (QTM). Here, we show that not only does QTM induce an effective energy barrier for the spin switching, but also its effect on the transport reveals as an additional signal in transport characteristics. Furthermore, we propose how to experimentally investigate QTM by means of the STM inelastic transport spectroscopy. also at Adam Mickiewicz University

  10. Polarizing a stored proton beam by spin-flip?

    Energy Technology Data Exchange (ETDEWEB)

    Oellers, Dieter Gerd Christian

    2010-04-15

    The present thesis discusses the extraction of the electron-proton spin-flip cross-section. The experimental setup, the data analysis and the results are pictured in detail. The proton is described by a QCD-based parton model. In leading twist three functions are needed. The quark distribution, the helicity distribution and the transversity distribution. While the first two are well-known, the transversity distribution is largely unknown. A self-sufficient measurement of the transversity is possible in double polarized proton-antiproton scattering. This rises the need of a polarized antiproton beam. So far spin filtering is the only tested method to produce a polarized proton beam, which may be capable to hold also for antiprotons. In-situ polarization build-up of a stored beam either by selective removal or by spin-flip of a spin-(1)/(2) beam is mathematically described. A high spin-flip cross-section would create an effective method to produce a polarized antiproton beam by polarized positrons. Prompted by conflicting calculations, a measurement of the spin-flip cross-section in low-energy electron-proton scattering was carried out. This experiment uses the electron beam of the electron cooler at COSY as an electron target. The depolarization of the stored proton beam is detected. An overview of the experiment is followed by detailed descriptions of the cycle setup, of the electron target and the ANKE silicon tracking telescopes acting as a beam polarimeter. Elastic protondeuteron scattering is the analyzing reaction. The event selection is depicted and the beam polarization is calculated. Upper limits of the two electron-proton spin-flip cross-sections {sigma} {sub parallel} and {sigma} {sub perpendicular} {sub to} are deduced using the likelihood method. (orig.)

  11. Magnetic switching of a single molecular magnet due to spin-polarized current

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2007-04-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

  12. Physical processes in spin polarized plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Kulsrud, R.M.; Valeo, E.J.; Cowley, S.

    1984-05-01

    If the plasma in a nuclear fusion reactor is polarized, the nuclear reactions are modified in such a way as to enhance the reactor performance. We calculate in detail the modification of these nuclear reactions by different modes of polarization of the nuclear fuel. We also consider in detail the various physical processes that can lead to depolarization and show that they are by and large slow enough that a high degree of polarization can be maintained.

  13. Spin-controlled nanomechanics induced by single-electron tunneling.

    Science.gov (United States)

    Radić, D; Nordenfelt, A; Kadigrobov, A M; Shekhter, R I; Jonson, M; Gorelik, L Y

    2011-12-02

    We consider dc-electronic transport through a nanowire suspended between normal- and spin-polarized metal leads in the presence of an external magnetic field. We show that magnetomotive coupling between the electrical current through the nanowire and vibrations of the wire may result in self-excitation of mechanical vibrations. The self-excitation mechanism is based on correlations between the occupancy of the quantized electronic energy levels inside the nanowire and the velocity of the nanowire. We derive conditions for the occurrence of the instability and find stable regimes of mechanical oscillations. © 2011 American Physical Society

  14. Coupled spin and charge collective excitations in a spin polarized electron gas

    International Nuclear Information System (INIS)

    Marinescu, D.C.; Quinn, J.J.; Yi, K.S.

    1997-01-01

    The charge and longitudinal spin responses induced in a spin polarized quantum well by a weak electromagnetic field are investigated within the framework of the linear response theory. The authors evaluate the excitation frequencies for the intra- and inter-subband transitions of the collective charge and longitudinal spin density oscillations including many-body corrections beyond the random phase approximation through the spin dependent local field factors, G σ ± (q,ω). An equation-of-motion method was used to obtain these corrections in the limit of long wavelengths, and the results are given in terms of the equilibrium pair correlation function. The finite degree of spin polarization is shown to introduce coupling between the charge and spin density modes, in contrast with the result for an unpolarized system

  15. Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

    Science.gov (United States)

    Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

    2018-01-01

    Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

  16. Production of highly spin-polarized atomic hydrogen and deuterium by spin-exchange

    International Nuclear Information System (INIS)

    Redsun, S.G.

    1990-01-01

    The first part of this work is a study of the production of highly spin-polarized atomic hydrogen and deuterium by spin-exchange optical pumping. A tunable ring dye laser is used to polarize rubidium atoms by optical pumping. The cell containing the rubidium vapor is coated with paraffin in order to reduce spin relaxation due to wall collisions. Hydrogen gas is dissociated in an inductive discharge and flows continuously through the cell, in which the hydrogen atoms are polarized by spin-exchange collisions with the polarized rubidium atoms. The hydrogen polarization is determined by a combination of fluorescence monitoring and magnetic resonance spectroscopy. Atomic hydrogen polarization as high as 2 z > H = 0.72(6) has been observed, which is the highest degree of polarization yet produced by this method. However, the polarization may be limited to this value due to the depolarization of the rubidium by radiation trapping. The spin-relaxation rate of atomic hydrogen on a paraffin-coated cell is also measured for the first time, and corresponds to about 3,800 wall bounces before electron-spin randomization. The second part of this work is a theoretical analysis of the problem of radiation trapping in a dense optically pumped alkali vapor. A Monte Carlo routine is used to simulate the trajectories of multiply scattered photons. The average spin angular momentum transfer from the photons to the vapor is used to determine the equilibrium polarization of the vapor as a function of the alkali density and the frequency of the pumping light

  17. Universal spin-polarization fluctuations in one-dimensional wires with magnetic impurities

    DEFF Research Database (Denmark)

    Mortensen, Asger; Egues, J.C.

    2002-01-01

    -flip suppresses conductance fluctuations while enhancing spin-polarization fluctuations. More importantly, spin-polarization fluctuations attain a universal value 1/3 for large enough spin-flip strengths. This intrinsic spin-polarization fluctuation may pose a severe limiting factor to the realization of steady...

  18. Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

    Directory of Open Access Journals (Sweden)

    Walid Amamou

    2016-03-01

    Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

  19. Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

    Energy Technology Data Exchange (ETDEWEB)

    Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

    2016-08-15

    Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

  20. Laser driven source of spin polarized atomic deuterium and hydrogen

    International Nuclear Information System (INIS)

    Poelker, M.; Coulter, K.P.; Holt, R.J.

    1993-01-01

    Optical pumping of potassium atoms in the presence of a high magnetic field followed by spin exchange collisions with deuterium (hydrogen) is shown to yield a high flux of spin polarized atomic deuterium (hydrogen). The performance of the laser driven source has been characterized as a function of deuterium (hydrogen) flow rate, potassium density, pump laser power, and magnetic field. Under appropriate conditions, the authors have observed deuterium atomic polarization as high as 75% at a flow rate 4.2x10 17 atoms/second. Preliminary results suggest that high nuclear polarizations are obtained in the absence of weak field rf transitions as a result of a spin temperature distribution that evolves through frequent H-H (D-D) collisions

  1. Polarized proton target with horizontal spin orientation

    International Nuclear Information System (INIS)

    Bunyatova, Eh.I.; Kiselev, Yu.F.; Kozlenko, N.G.

    1988-01-01

    Proton target, the polarization vector of which may be arbitrary oriented in horizontal plane relatively to the beam, is developed and tested. 70% value of polarization is obtained. 0.6 K temperature is acquired through 3 He pumping out continuous cycle. 1.2-propylene glycol - Cr(V) was used as working medium. Magnetic system is made in the form of Helmholtz sperconducting coils with working curren close to critical one. Target polarization is measured by NMR technique using original system of proton signal processing

  2. Effect of spin polarization on the structural properties and bond ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 39; Issue 6. Effect of spin ... Volume 39 Issue 6 October 2016 pp 1427-1434 ... Spin-polarization calculations show that ferromagnetic state (FM) is stable for FexB structures and carry magnetic moment of 1.12, 1.83 and 2.03 μ B inFeB, Fe 2 B and Fe 3 B, respectively.

  3. Observation of nuclear spin waves in spin-polarized atomic hydrogen gas

    Energy Technology Data Exchange (ETDEWEB)

    Johson, B.R.; Denker, J.S.; Bigelow, N.; Levy, L.P.; Freed, J.H.; Lee, D.M.

    1984-04-23

    We have observed narrow, distinct resonances in the NMR spectrum of dilute spin-polarized atomic hydrogen gas (nroughly-equal10/sup 16/ atoms/cm/sup 3/). The dependence of the observed spectra on temperature, density, polarization, and magnetic field gradient is consistent with theoretical predictions for spin-wave excitations damped by diffusion. We have measured the parameter ..mu.., which is a measure of the importance of exchange effects in spin transport processes, and the diffusion coefficient D/sub 0/, both of which are in reasonable agreement with theory.

  4. Spin-dependent tunneling conductance in 2D structures in zero magnetic field

    International Nuclear Information System (INIS)

    Rozhansky, I.V.; Averkiev, N.S.

    2009-01-01

    The influence of the spin-orbit interaction on the tunneling between two-dimensional electron layers is considered. A general expression for the tunneling current is obtained with the Rashba and Dresselhaus effects and also elastic scattering of charge carriers on impurities taken into account. It is shown that the particular form of the tunneling conductance as a function of the voltage between layers is extremely sensitive to the relationship between the Rashba and Dresselhaus parameters. This makes it possible to determine the parameters of the spin-orbit interaction and the quantum scattering time directly from measurements of the tunneling conductance in the absence of magnetic field

  5. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  6. Spin polarization effects in low-energy elastic electron scattering

    International Nuclear Information System (INIS)

    Beerlage, M.J.M.

    1982-01-01

    This work describes experiments on the role of spin polarization in elastic electron scattering. Chapter I introduces the topic and in chapter II elastic scattering of 10-50 eV electrons from Ar and Kr in the angular range between 40 0 and 110 0 is studied. Noble gases have been chosen as targets in view of their relative theoretical simplicity. Below 25 eV scattered intensities measured by various authors exhibit severe disagreements. However, in the entire energy range, the spin polarization results can reasonably well be used to point out the shortcomings of the available theoretical data. The main topic of chapter III is the first attempt to determine the magnitude of a polarization phenomenon - in elastic electron scattering from the optically active camphor molecule - of which the existence has recently been predicted qualitatively from the absence of parity symmetry in such molecules. Besides these studies on gaseous targets the author has initiated a scattering experiment on crystal surfaces, using spin polarized electrons. Within the framework of this project a large new experimental arrangement has been built up. It consists of a spin polarized electron source and a LEED scattering chamber. Design, construction and test results, showing the usefulness of the set-up, are described in the last chapter. (Auth.)

  7. ESR and related experiments in spin-polarized atomic hydrogen

    International Nuclear Information System (INIS)

    Yperen, G.H. van.

    1984-01-01

    This thesis deals with some experiments in (gaseous) spin-polarized atomic hydrogen. One uses the expression 'stabilized' atomic hydrogen, meaning that by choosing suitable conditions one can suppress the tendency of atoms to recombine into H 2 molecules, such that the lifetime of the atomic state is extended by many orders of magnitude. Research is focused at the study of processes that determine the decay rate of polarized H samples, with the ultimate goal of preparing samples of sufficiently high density and at low enough temperature to observe experimentally the behaviour of the (degenerate) quantum gas. ESR (Electron Spin Resonance) appears to be a very suitable measurement technique to study the properties of polarized H. This work describes the introduction of ESR as detection technique, and the first results of an experiment in polarized H using this technique. (orig.)

  8. Spin-polarization of an electro-static positron beam

    International Nuclear Information System (INIS)

    Kawasuso, A.; Maekawa, M.

    2008-01-01

    We constructed an electro-static positron beam apparatus. We fabricated a simple spin-polarimeter composed of a permanent magnet with a surface magnetic field of 0.65 T and an iron pole piece. The longitudinal spin-polarization of the positron beam was determined to be 0.3 by analyzing the magnetic field dependence of the Doppler broadening of annihilation radiation from a fused silica specimen. The effect of spin rotation was examined using an iron poly-crystal and a simple E x B filter

  9. Induced spin polarization effect in graphene by ferromagnetic nanocontact

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Sumit; Saha, Shyamal K., E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2015-03-07

    Chemically synthesized graphene contains large number of defects which act as localized spin moments at the defect sites. Cobalt nanosheets of variable thickness are grown on graphene surface to investigate spin/magnetotransport through graphene sheets containing large number of localized spins. Negative magnetoresistance (MR) is observed over the entire temperature range (5–300 K) for thin cobalt sheets, while a cross-over from negative to positive MR with increasing temperature is noticed for thicker cobalt sheets. The observed MR results are explained on the basis of recently reported spin polarization effect in graphene due to the presence of ferromagnetic atoms on the surface considering a spin valve like Co/graphene/Co nanostructures.

  10. Measurement of spin observables using a storage ring with polarized beam and polarized internal gas target

    International Nuclear Information System (INIS)

    Lee, K.; Miller, M.A.; Smith, A.; Hansen, J.; Bloch, C.; van den Brand, J.F.J.; Bulten, H.J.; Ent, R.; Goodman, C.D.; Jacobs, W.W.; Jones, C.E.; Korsch, W.; Leuschner, M.; Lorenzon, W.; Marchlenski, D.; Meyer, H.O.; Milner, R.G.; Neal, J.S.; Pancella, P.V.; Pate, S.F.; Pitts, W.K.; von Przewoski, B.; Rinckel, T.; Sowinski, J.; Sperisen, F.; Sugarbaker, E.; Tschalaer, C.; Unal, O.; Zhou, Z.

    1993-01-01

    We report the first measurement of analyzing powers and spin correlation parameters using a storage ring with both beam and internal target polarized. Spin observables were measured for elastic scattering of 45 and 198 MeV protons from polarized 3 He nuclei in a new laser-pumped internal gas target at the Indiana University Cyclotron Facility Cooler Ring. Scattered protons and recoil 3 He nuclei were detected in coincidence with large acceptance plastic scintillators and silicon detectors. The internal-target technique demonstrated in this experiment has broad applicability to the measurement of spin-dependent scattering in nuclear and particle physics

  11. Novel compact model for multi-level spin torque magnetic tunnel junctions

    Science.gov (United States)

    Prajapati, Sanjay; Verma, Shivam; Kulkarni, Anant Aravind; Kaushik, Brajesh Kumar

    2016-10-01

    Spin-transfer torque (STT) and spin-orbit torque (SOT) based magnetic tunnel junction (MTJ) devices are emerging as strong contenders for the next generation memories. Conventional STT magneto-resistive random access memory (MRAM) offers lower power, non-volatility and CMOS process compatibility. However, higher current requirement during the write operation leads to tunnel barrier reliability issues and larger access devices. SOT-MRAM eliminates the reliability issues with strong spin polarized current (100%) and separate read/write current paths; however, the additional two access transistors in SOT-MRAM results into increased cell area. Multilevel cell (MLC) structure paves a way to circumvent the problems related to the conventional STT/SOT based MTJ devices and provides enhanced integration density at reduced cost per bit. Conventional STT/SOT-MRAM requires a unit cell area of 10-60 F2 and reported simulations have been based on available single-level MTJ compact models. However, till date no compact model exists that can capture the device physics of MLC-MTJ accurately. Hence, a novel compact model is proposed in this paper to capture the accurate device physics and behaviour of the MLC-MTJs. It is designed for MLCs with different MTJ configurations demonstrated so far, such as series and parallel free layer based MLC-MTJs. The proposed model is coded in Verilog-A, which is compatible with SPICE for circuit level simulations. The model is in close agreement with the experimental results exhibiting an average error of less than 15%.

  12. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  13. A technique for measurement of vector and tensor polarization in solid spin one polarized targets

    Energy Technology Data Exchange (ETDEWEB)

    Kielhorn, W.F.

    1991-06-01

    Vector and tensor polarizations are explicitly defined and used to characterize the polarization states of spin one polarized targets, and a technique for extracting these polarizations from nuclear magnetic resonance (NMR) data is developed. This technique is independent of assumptions about spin temperature, but assumes the target's crystal structure induces a quadrupole interaction with the spin one particles. Analysis of the NMR signals involves a computer curve fitting algorithm implemented with a fast Fourier transform method which speeds and simplifies curve fitting algorithms used previously. For accurate curve fitting, the NMR electronic circuit must be modeled by the fitting algorithm. Details of a circuit, its model, and data collected from this circuit are given for a solid deuterated ammonia target. 37 refs., 19 figs., 3 tabs.

  14. A technique for measurement of vector and tensor polarization in solid spin one polarized targets

    International Nuclear Information System (INIS)

    Kielhorn, W.F.

    1991-06-01

    Vector and tensor polarizations are explicitly defined and used to characterize the polarization states of spin one polarized targets, and a technique for extracting these polarizations from nuclear magnetic resonance (NMR) data is developed. This technique is independent of assumptions about spin temperature, but assumes the target's crystal structure induces a quadrupole interaction with the spin one particles. Analysis of the NMR signals involves a computer curve fitting algorithm implemented with a fast Fourier transform method which speeds and simplifies curve fitting algorithms used previously. For accurate curve fitting, the NMR electronic circuit must be modeled by the fitting algorithm. Details of a circuit, its model, and data collected from this circuit are given for a solid deuterated ammonia target. 37 refs., 19 figs., 3 tabs

  15. Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs

    Science.gov (United States)

    Figielski, T.; Morawski, A.; Wosinski, T.; Wrotek, S.; Makosa, A.; Lusakowska, E.; Story, T.; Sipatov, A. Yu.; Szczerbakow, A.; Grasza, K.; hide

    2002-01-01

    Perpendicular transport through single- and double-barrier heterostructures consisting of ferromagnetic EuS layers embedded into PbS matrix was investigated. Manifestations of both resonant tunneling and spin filtering through EuS barrier have been observed.

  16. Sensing Noncollinear Magnetism at the Atomic Scale Combining Magnetic Exchange and Spin-Polarized Imaging.

    Science.gov (United States)

    Hauptmann, Nadine; Gerritsen, Jan W; Wegner, Daniel; Khajetoorians, Alexander A

    2017-09-13

    Storing and accessing information in atomic-scale magnets requires magnetic imaging techniques with single-atom resolution. Here, we show simultaneous detection of the spin-polarization and exchange force with or without the flow of current with a new method, which combines scanning tunneling microscopy and noncontact atomic force microscopy. To demonstrate the application of this new method, we characterize the prototypical nanoskyrmion lattice formed on a monolayer of Fe/Ir(111). We resolve the square magnetic lattice by employing magnetic exchange force microscopy, demonstrating its applicability to noncollinear magnetic structures for the first time. Utilizing distance-dependent force and current spectroscopy, we quantify the exchange forces in comparison to the spin-polarization. For strongly spin-polarized tips, we distinguish different signs of the exchange force that we suggest arises from a change in exchange mechanisms between the probe and a skyrmion. This new approach may enable both nonperturbative readout combined with writing by current-driven reversal of atomic-scale magnets.

  17. Light-induced spin polarizations in quantum rings

    NARCIS (Netherlands)

    Joibari, F.K.; Blanter, Y.M.; Bauer, G.E.W.

    2014-01-01

    Nonresonant circularly polarized electromagnetic radiation can exert torques on magnetizations by the inverse Faraday effect (IFE). Here, we discuss the enhancement of IFE by spin-orbit interactions. We illustrate the principle by studying a simple generic model system, i.e., the

  18. Increasing Spin Coherence in Nanodiamond via Dynamic Nuclear Polarization

    Science.gov (United States)

    Gaebel, Torsten; Rej, Ewa; Boele, Thomas; Waddington, David; Reilly, David

    Nanodiamonds are of interest for quantum information technology, as metrological sensors, and more recently as a probe of biological environments. Here we present results examining how intrinsic defects can be used for dynamic nuclear polarization that leads to a dramatic increase in both T1 and T2 for 13C spins in nanodiamond. Mechanisms to explain this enhancement are discussed.

  19. Spin-orbital dynamics in a system of polar molecules

    Science.gov (United States)

    Syzranov, Sergey V.; Wall, Michael L.; Gurarie, Victor; Rey, Ana Maria

    2014-11-01

    Spin-orbit coupling in solids normally originates from the electron motion in the electric field of the crystal. It is key to understanding a variety of spin-transport and topological phenomena, such as Majorana fermions and recently discovered topological insulators. Implementing and controlling spin-orbit coupling is thus highly desirable and could open untapped opportunities for the exploration of unique quantum physics. Here we show that dipole-dipole interactions can produce an effective spin-orbit coupling in two-dimensional ultracold polar molecule gases. This spin-orbit coupling generates chiral excitations with a non-trivial Berry phase 2π. These excitations, which we call chirons, resemble low-energy quasiparticles in bilayer graphene and emerge regardless of the quantum statistics and for arbitrary ratios of kinetic to interaction energies. Chirons manifest themselves in the dynamics of the spin density profile, spin currents and spin coherences, even for molecules pinned in a deep optical lattice and should be observable in current experiments.

  20. Inducing spin-dependent tunneling to probe magnetic correlations in optical lattices

    DEFF Research Database (Denmark)

    Pedersen, Kim Georg Lind; Andersen, Brian Møller; Bruun, Georg Morten

    2012-01-01

    We suggest a simple experimental method for probing antiferromagnetic spin correlations of two-component Fermi gases in optical lattices. The method relies on a spin selective Raman transition to excite atoms of one spin species to their first excited vibrational mode where the tunneling is large....... The resulting difference in the tunneling dynamics of the two spin species can then be exploited, to reveal the spin correlations by measuring the number of doubly occupied lattice sites at a later time. We perform quantum Monte Carlo simulations of the spin system and solve the optical lattice dynamics...... numerically to show how the timed probe can be used to identify antiferromagnetic spin correlations in optical lattices....

  1. The S-DALINAC polarized electron injector SPIN

    Energy Technology Data Exchange (ETDEWEB)

    Eckardt, Christian; Bahlo, Thore; Bangert, Phillip; Barday, Roman; Bonnes, Uwe; Brunken, Marco; Burandt, Christoph; Eichhorn, Ralf; Enders, Joachim; Espig, Martin; Platz, Markus; Poltoratska, Yuliya; Roth, Markus; Schneider, Fabian; Wagner, Markus; Weber, Antje; Zwicker, Benjamin [Institut fuer Kernphysik, Technische Universitaet, Darmstadt (Germany); Ackermann, Wolfgang; Mueller, Wolfgang F.O.; Weiland, Thomas [Institut fuer Theorie Elektromagnetischer Felder, Technische Universitaet, Darmstadt (Germany); Aulenbacher, Kurt [Institut fuer Kernphysik, Johannes Gutenberg-Universitaet, Mainz (Germany)

    2011-07-01

    A source of polarized electrons has been installed at the superconducting 130 MeV Darmstadt electron linac S-DALINAC. Polarized electrons are generated by irradiating a GaAs cathode with pulsed Ti:Sapphire and diode lasers and preaccelerated to 100 keV. A Wien filter and 100 keV Mott polarimeter are used for spin manipulation and polarization measurement and various beam diagnostic elements are installed. To measure the beam polarization downstream of the superconducting injector linac a 5-10 MeV Mott polarimeter and a Compton-transmission polarimeter have been developed. We report on the status of the polarized electron source and foreseen experiments.

  2. Manifestation of Spin Selection Rules on the Quantum Tunneling of Magnetization in a Single Molecule Magnet

    OpenAIRE

    Henderson, J. J.; Koo, C.; Feng, P. L.; del Barco, E.; Hill, S.; Tupitsyn, I. S.; Stamp, P. C. E.; Hendrickson, D. N.

    2009-01-01

    We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet (SMM) in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at elevated temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three: this is dictated by the C3 symmetry of the molecule, which forbids pure tunneling from the lowest metastable state. Resonances...

  3. Shape Biased Low Power Spin Dependent Tunneling Magnetic Field Sensors

    Science.gov (United States)

    Tondra, Mark; Qian, Zhenghong; Wang, Dexin; Nordman, Cathy; Anderson, John

    2001-10-01

    Spin Dependent Tunneling (SDT) devices are leading candidates for inclusion in a number of Unattended Ground Sensor applications. Continued progress at NVE has pushed their performance to 1OOs of pT I rt. Hz 1 Hz. However, these sensors were designed to use an applied field from an on-chip coil to create an appropriate magnetic sensing configuration. The power required to generate this field (^100mW) is significantly greater than the power budget (^lmW) for a magnetic sensor in an Unattended Ground Sensor (UGS) application. Consequently, a new approach to creating an ideal sensing environment is required. One approach being used at NVE is "shape biasing." This means that the physical layout of the SDT sensing elements is such that the magnetization of the sensing film is correct even when no biasing field is applied. Sensors have been fabricated using this technique and show reasonable promise for UGS applications. Some performance trade-offs exist. The power is easily tinder 1 MW, but the sensitivity is typically lower by a factor of 10. This talk will discuss some of the design details of these sensors as well as their expected ultimate performance.

  4. 14N Polarization Inversion Spin Exchange at Magic Angle (PISEMA)

    Science.gov (United States)

    Qian, Chunqi; Fu, Riqiang; Gor'kov, Peter; Brey, William W.; Cross, Timothy A.; Gan, Zhehong

    2009-01-01

    Polarization Inversion Spin Exchange at Magic Angle (PISEMA) is a powerful experiment for determining peptide orientation in uniformly aligned samples such as planar membranes. In this paper, we present 14N-PISEMA experiment which correlates 14N quadrupolar coupling and 14N- 1H dipolar coupling. 14N-PISEMA enables the use of 14N quadrupolar coupling tensor as an ultra sensitive probe for peptide orientation and can be carried out without the need of isotope enrichment. The experiment is based on selective spin-exchange between a proton and a single-quantum transition of 14N spins. The spin-exchange dynamics is described and the experiment is demonstrated with a natural abundant N-acetyl valine crystal sample.

  5. Perfect switching of the spin polarization in a ferromagnetic gapless graphene/superconducting gapped graphene junction

    International Nuclear Information System (INIS)

    Soodchomshom, Bumned; Tang, I-Ming; Hoonsawat, Rassmidara

    2010-01-01

    With the fabrication of gapped graphene, interest in the tunneling spectroscopy in graphene-based FG/SG junctions in which one side consists of a gapless ferro-magnetic graphene (FG) and the other side, of a gapped superconducting graphene (SG) has arisen. The carriers in the gapless (gapped) graphene are 2D relativistic particles having an energy spectrum given by E=√(h 2 v F 2 k 2 +(mv F 2 ) 2 ) (where mv F 2 is the gap and v F is the Fermi velocity). The spin currents in this FG/SG junction are obtained within the framework of the extended Blonder-Tinkham-Klapwijk (BTK) formalism. The effects of the superconducting energy gap in SG, of the gap mv F 2 which opened in the superconducting graphene, of the exchange field in FG, of the spin-dependent specular Andreev reflection, of the effective Fermi energy (E FF ) of FG and of the bias voltage across the junction (V) are simulated. It is seen that by adjusting E FF or V, the spin polarization (defined as SP(%) = 100% x (G ↑ - G ↓ )/(G ↑ + G ↓ )) can be switched from a pure spin up (SP = +100%) state to pure spin down (SP = -100%) state.

  6. Resonant optical tunneling-induced enhancement of the photonic spin Hall effect

    Science.gov (United States)

    Jiang, Xing; Wang, Qingkai; Guo, Jun; Zhang, Jin; Chen, Shuqing; Dai, Xiaoyu; Xiang, Yuanjiang

    2018-04-01

    Due to the quantum analogy with optics, the resonant optical tunneling effect (ROTE) has been proposed to investigate both the fundamental physics and the practical applications of optical switches and liquid refractive index sensors. In this paper, the ROTE is used to enhance the spin Hall effect (SHE) of transmitted light. It is demonstrated that sandwiching a layer of a high-refractive-index medium (boron nitride crystal) between two low-refractive-index layers (silica) can effectively enhance the photonic SHE due to the increased refractive index gradient and an enhanced evanescent field near the interface between silica and boron nitride. A maximum transverse shift of the horizontal polarization state in the ROTE structure of about 22.25 µm has been obtained, which is at least three orders of magnitude greater than the transverse shift in the frustrated total internal reflection structure. Moreover, the SHE can be manipulated by controlling the component materials and the thickness of the ROTE structure. These findings open the possibility for future applications of photonic SHE in precision metrology and spin-based photonics.

  7. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    Science.gov (United States)

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

  8. Spin-dependent thermoelectric effects in superconductor-ferromagnet tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kolenda, Stefan; Beckmann, Detlef [Institut fuer Nanotechnologie, Karlsruher Institut fuer Technologie (Germany); Suergers, Christoph [Physikalisches Institut, Karlsruher Institut fuer Technologie (Germany)

    2016-07-01

    Recently, large thermoelectric effects were predicted to occur in superconductor-ferromagnet tunnel junctions with a spin-splitting of the density of states. We have reported on the observation of these effects in samples where the spin splitting was induced by an applied magnetic field. Here, we show results on samples where the spin splitting is enhanced by exchange coupling to the ferromagnetic insulator europium sulfide.

  9. Polarized 3He Neutron Spin Filters

    Energy Technology Data Exchange (ETDEWEB)

    Sno, William Michael [Indiana Univ., Bloomington, IN (United States)

    2016-01-12

    The goal of this grant to Indiana University and subcontractors at Hamilton College and Wisconsin and the associated Interagency Agreement with NIST was to extend the technique of polarized neutron scattering by the development and application of polarized 3He-based neutron spin filters. This effort was blessed with long-term support from the DOE Office of Science, which started in 2003 and continued until the end of a final no-cost extension of the last 3-year period of support in 2013. The steady support from the DOE Office of Science for this long-term development project was essential to its eventual success. Further 3He neutron spin filter development is now sited at NIST and ORNL.

  10. Spin-orbit-induced spin splittings in polar transition metal dichalcogenide monolayers

    KAUST Repository

    Cheng, Yingchun

    2013-06-01

    The Rashba effect in quasi two-dimensional materials, such as noble metal surfaces and semiconductor heterostructures, has been investigated extensively, while interest in real two-dimensional systems has just emerged with the discovery of graphene. We present ab initio electronic structure, phonon, and molecular-dynamics calculations to study the structural stability and spin-orbit-induced spin splitting in the transition metal dichalcogenide monolayers MXY (M = Mo, W and X, Y = S, Se, Te). In contrast to the non-polar systems with X = Y, in the polar systems with X ≠ Y the Rashba splitting at the Γ-point for the uppermost valence band is caused by the broken mirror symmetry. An enhancement of the splitting can be achieved by increasing the spin-orbit coupling and/or the potential gradient. © Copyright EPLA, 2013.

  11. Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes.

    Science.gov (United States)

    Rotjanapittayakul, Worasak; Pijitrojana, Wanchai; Archer, Thomas; Sanvito, Stefano; Prasongkit, Jariyanee

    2018-03-19

    Recently magnetic tunnel junctions using two-dimensional MoS 2 as nonmagnetic spacer have been fabricated, although their magnetoresistance has been reported to be quite low. This may be attributed to the use of permalloy electrodes, injecting current with a relatively small spin polarization. Here we evaluate the performance of MoS 2 -based tunnel junctions using Fe 3 Si Heusler alloy electrodes. Density functional theory and the non-equilibrium Green's function method are used to investigate the spin injection efficiency (SIE) and the magnetoresistance (MR) ratio as a function of the MoS 2 thickness. We find a maximum MR of ~300% with a SIE of about 80% for spacers comprising between 3 and 5 MoS 2 monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.

  12. Spin-polarized quantum transport properties through flexible phosphorene

    Science.gov (United States)

    Chen, Mingyan; Yu, Zhizhou; Xie, Yiqun; Wang, Yin

    2016-10-01

    We report a first-principles study on the tunnel magnetoresistance (TMR) and spin-injection efficiency (SIE) through phosphorene with nickel electrodes under the mechanical tension and bending on the phosphorene region. Both the TMR and SIE are largely improved under these mechanical deformations. For the uniaxial tension (ɛy) varying from 0% to 15% applied along the armchair transport (y-)direction of the phosphorene, the TMR ratio is enhanced with a maximum of 107% at ɛy = 10%, while the SIE increases monotonously from 8% up to 43% with the increasing of the strain. Under the out-of-plane bending, the TMR overall increases from 7% to 50% within the bending ratio of 0%-3.9%, and meanwhile the SIE is largely improved to around 70%, as compared to that (30%) of the flat phosphorene. Such behaviors of the TMR and SIE are mainly affected by the transmission of spin-up electrons in the parallel configuration, which is highly dependent on the applied mechanical tension and bending. Our results indicate that the phosphorene based tunnel junctions have promising applications in flexible electronics.

  13. Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers

    Science.gov (United States)

    van't Erve, O. M. J.; Friedman, A. L.; Li, C. H.; Robinson, J. T.; Connell, J.; Lauhon, L. J.; Jonker, B. T.

    2015-06-01

    Spin-based devices offer non-volatile, scalable, low power and reprogrammable functionality for emerging device technologies. Here we fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barriers used to generate spin accumulation and spin currents in a silicon nanowire transport channel. We report the first observation of spin precession via the Hanle effect in both local three-terminal and non-local spin-valve geometries, providing a direct measure of spin lifetimes and confirmation of spin accumulation and pure spin transport. The use of graphene as the tunnel barrier provides a low-resistance area product contact and clean magnetic switching characteristics, because it smoothly bridges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic behaviour. Utilizing intrinsic two-dimensional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers many advantages over conventional materials deposited by vapour deposition, enabling a path to highly scaled electronic and spintronic devices.

  14. Spin dependence studies with the ZGS polarized proton beam

    International Nuclear Information System (INIS)

    Wicklund, A.B.

    1977-01-01

    Selected results are summarized of recent measurements using a polarized proton beam at the Argonne ZGS. The polarized target asymmetry and the beam-target spin correlation are measured in pp→pp at 6 and 12 GeV/c. Asymmetry is slowly varying with energy while spin correlation increases considerably from 6 to 12 GeV/c. The polarized parameters in pp→pp and pn→pn elastic scattering are compared. The data show that pp and pn polarizations tend to approach mirror symmetry as the energy increases. The effective mass spectrometer has been used to study the pp→pπ + n, pn→pπ - p reactions from 2 to 6 GeV/c. For small -t values (-t 2 ) these reactions are dominated by π exchange. At large -t values other mechanisms besides π-exchange become important. The 3-body diffraction dissociation reactions have been measured at 6 GeV/c with hydrogen and deuterium targets. The reactions are pp→pπ + π - (p); pd→pπ + π - (p+n). Comparison of hydrogen and deuterium cross section reveals a considerable coherent contribution of deuterium, which has an approximately 20% larger cross section per nucleon than hydrogen

  15. Theory of spin inelastic tunneling spectroscopy for superconductor-superconductor and superconductor-metal junctions

    Science.gov (United States)

    Berggren, P.; Fransson, J.

    2015-05-01

    We address the tunneling conductance and spin inelastic tunneling spectroscopy of localized paramagnetic moments in a superconducting environment, pertaining to recent measurements on Fe-octaethylporphyrin-chloride using superconducting scanning tunneling microscopy. We demonstrate that the Cooper pair correlations in the tip and substrate generate a finite uniaxial anisotropy field acting on the local spin moment, and we argue that this field may be a source for the observed changes in the conductance spectrum for decreasing distance between the scanning tunneling tip and the local magnetic moment. We make a side-by-side comparison between the superconductor-superconductor junction and normal-metal-superconductor junction, and find qualitative agreement between the two setups while quantitative differences become explicit. When simulating the effects of electron pumping, we obtain additional peaks in the conductance spectrum that can be attributed to excitations between higher-energy spin states. The transverse anisotropy field couples basis states of the local spin which opens for transitions between spin states that are otherwise forbidden by conservation of angular momentum. Finally, we explore the influences of temperature, which tend to enable in-gap transitions, and an external magnetic field, which enables deeper studies of the spin excitation spectrum. We especially notice the appearance of a low and high excitation peak on each side of the main coherence peak as an imprint of transitions between the Zeeman split ground states.

  16. Higher spins tunneling from a time dependent and spherically symmetric black hole

    International Nuclear Information System (INIS)

    Siahaan, Haryanto M.

    2016-01-01

    The discussions of Hawking radiation via tunneling method have been performed extensively in the case of scalar particles. Moreover, there are also several works in discussing the tunneling method for Hawking radiation by using higher spins, e.g. neutrino, photon, and gravitino, in the background of static black holes. Interestingly, it is found that the Hawking temperature for static black holes using the higher spins particles has no difference compared to the one computed using scalars. In this paper, we study the Hawking radiation for a spherically symmetric and time dependent black holes using the tunneling of Dirac particles, photon, and gravitino. We find that the obtained Hawking temperature is similar to the one derived in the tunneling method by using scalars. (orig.)

  17. Suppression of quantum tunneling for all spins for easy-axis systems

    International Nuclear Information System (INIS)

    Khare, Avinash; Paranjape, M. B.

    2011-01-01

    The semiclassical limit of quantum spin systems corresponds to a dynamical Lagrangian which contains the usual kinetic energy, the couplings and interactions of the spins, and an additional, first-order kinematical term which corresponds to the Wess-Zumino-Novikov-Witten (WZNW) term for the spin degree of freedom. It was shown that in the case of the kinetic dynamics determined only by the WZNW term, half-odd integer spin systems show a lack of tunneling phenomena, whereas integer spin systems are subject to it in the case of potentials with easy-plane easy-axis symmetry. Here we prove for the theory with a normal quadratic kinetic term of arbitrary strength or the first-order theory with azimuthal symmetry (which is equivalently the so-called easy-axis situation), that the tunneling is in fact suppressed for all nonzero values of spin. This model exemplifies the concept that in the presence of complex Euclidean action, it is necessary to use the ensuing complex critical points in order to define the quantum (perturbation) theory. In the present example, if we do not do so, exactly the opposite, erroneous conclusion that the tunneling is unsuppressed for all spins, is reached.

  18. Spin tunneling in magnetic molecules: Quantitative estimates for Fe8 clusters

    Science.gov (United States)

    Galetti, D.; Silva, Evandro C.

    2007-12-01

    Spin tunneling in the particular case of the magnetic molecular cluster octanuclear iron(III), Fe8, is treated by an effective Hamiltonian that allows for an angle-based description of the process. The presence of an external magnetic field along the easy axis is also taken into account in this description. Analytic expressions for the energy levels and barriers are obtained from a harmonic approximation of the potential function which give results in good agreement with the experimental results. The energy splittings due to spin tunneling is treated in an adapted WKB approach and it is shown that the present description can give results to a reliable degree of accuracy.

  19. Tunnel splitting for a high-spin molecule in an in-plane field

    Science.gov (United States)

    Zhu, Jia-Lin

    2000-08-01

    Direction and strength effects of a magnetic field on the ground-state tunnel splitting for a biaxial spin molecule with the model Hamiltonian H = k1Sz2 + k2Sy2- gµBHzSz- gµBHySy have been investigated within a continuous-spin approach including the Wess-Zumino-Berry term. The topological oscillation and the non-Kramers freezing indicated in the approach are in agreement with those observed in a recent experiment on Fe8 molecular nanomagnets. The behaviour of tunnel splitting with multiple orbits induced by strong fields has been revealed clearly.

  20. Designing organic spin filters in the coherent tunneling regime.

    Science.gov (United States)

    Herrmann, Carmen; Solomon, Gemma C; Ratner, Mark A

    2011-06-14

    Spin filters, that is, systems which preferentially transport electrons of a certain spin orientation, are an important element for spintronic schemes and in chemical and biological instances of spin-selective electronic communication. We study the relation between molecular structure and spin filtering functionality employing a theoretical analysis of both model and stable organic radicals based on substituted benzene, which are bound to gold electrodes, with a combination of density functional theory and the Landauer-Imry-Büttiker approach. We compare the spatial distribution of the spin density and of the frontier central subsystem molecular orbitals, and local contributions to the transmission. Our results suggest that the delocalization of the singly occupied molecular orbital and of the spin density onto the benzene ring connected to the electrodes, is a good, although not the sole indicator of spin filtering functionality. The stable radicals under study do not effectively act as spin filters, while the model phenoxy-based radicals are effective due to their much larger spin delocalization. These conclusions may also be of interest for electron transfer experiments in electron donor-bridge-acceptor complexes.

  1. a Spinning Polarizer and Spinning Analyzer Method for Visualizing the Isochromates in Conoscopic Interferometers

    Science.gov (United States)

    Olorunsola, Oluwatobi; Dada, Oluwaseye; Wang, Pengqian

    2013-09-01

    We have developed a spinning polarizer and spinning analyzer (SPSA) method to visualize the whole isochromatic fringes in conoscopic interferometers for the study of optically anisotropic materials. This simple method completely eliminates the broad and dark isogyre fringes appearing in a conventional conoscopic interferometer where a linear polarizer and a linear analyzer (LPLA) are used. Our method allows the direct visualization of the isochromates on the viewing screen by eyes in real time, without the need of additional optics or detectors other than those used in a conventional conoscopic interferometer, and no additional computation is required. This method works at any polarization state of the input light, and at any wavelength permitted by the polarizers. In the case of polychromatic illumination our method reveals the isochromates of all colors indiscriminatively, in comparison to the method of circular polarizer and circular analyzer (CPCA), which is considerably subject to spectrum modulation due to the dispersion in the retardation of the quarter-wave plates. The proposed method is demonstrated in a lithium niobate (LiNbO3) crystal driven by an external electric field.

  2. Mechanical design of a rotary balance system for NASA. Langley Research Center's vertical spin tunnel

    Science.gov (United States)

    Allred, J. W.; Fleck, V. J.

    1992-01-01

    A new lightweight Rotary Balance System is presently being fabricated and installed as part of a major upgrade to the existing 20 Foot Vertical Spin Tunnel. This upgrade to improve model testing productivity of the only free spinning vertical wind tunnel includes a modern fan/drive and tunnel control system, an updated video recording system, and the new rotary balance system. The rotary balance is a mechanical apparatus which enables the measurement of aerodynamic force and moment data under spinning conditions (100 rpm). This data is used in spin analysis and is vital to the implementation of large amplitude maneuvering simulations required for all new high performance aircraft. The new rotary balance system described in this report will permit greater test efficiency and improved data accuracy. Rotary Balance testing with the model enclosed in a tare bag can also be performed to obtain resulting model forces from the spinning operation. The rotary balance system will be stored against the tunnel sidewall during free flight model testing.

  3. Radio frequency scanning tunneling spectroscopy for single-molecule spin resonance.

    Science.gov (United States)

    Müllegger, Stefan; Tebi, Stefano; Das, Amal K; Schöfberger, Wolfgang; Faschinger, Felix; Koch, Reinhold

    2014-09-26

    We probe nuclear and electron spins in a single molecule even beyond the electromagnetic dipole selection rules, at readily accessible magnetic fields (few mT) and temperatures (5 K) by resonant radio-frequency current from a scanning tunneling microscope. We achieve subnanometer spatial resolution combined with single-spin sensitivity, representing a 10 orders of magnitude improvement compared to existing magnetic resonance techniques. We demonstrate the successful resonant spectroscopy of the complete manifold of nuclear and electronic magnetic transitions of up to ΔI(z)=±3 and ΔJ(z)=±12 of single quantum spins in a single molecule. Our method of resonant radio-frequency scanning tunneling spectroscopy offers, atom-by-atom, unprecedented analytical power and spin control with an impact on diverse fields of nanoscience and nanotechnology.

  4. Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

    Science.gov (United States)

    Schoonus, J J H M; Lumens, P G E; Wagemans, W; Kohlhepp, J T; Bobbert, P A; Swagten, H J M; Koopmans, B

    2009-10-02

    By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

  5. Wind tunneling testing and analysis relating to the spinning of light aircraft

    Science.gov (United States)

    Mccormick, B. W.; Zilliac, G. G.; Ballin, M. G.

    1984-01-01

    Included is a summary of two studies related to the spinning of light aircraft. The first study was conducted to demonstrate that the aerodynamic forces and moments acting on a tail of a spinning aircraft can be obtained from static wind-tunnel tests. The second study analytically investigated spinning using a high angle-of-attack aerodynamic model derived from a static wind-tunnel data base. The validity of the aerodynamic model is shown by comparisons with rotary-balance data and forced-oscillation tests. The results of a six-degree-of-freedom analysis show that the dynamics and aerodynamics of the steep- and flat-spin modes of a modified Yankee have been properly modeled.

  6. Influence of External Magnetic Fields on Tunneling of Spin-1 Bose Condensate

    International Nuclear Information System (INIS)

    Yu Zhaoxian; Jiao Zhiyong; Sun Jinzuo

    2005-01-01

    In this letter, we have studied the influence of the external magnetic fields on tunneling of the spin-1 Bose condensate. We find that the population transfer between spin-0 and spin-±1 exhibits the step structure under the external cosinusoidal magnetic field and a combination of static and cosinusoidal one, respectively. Compared with the longitudinal component of the external magnetic field, the smaller the transverse component of the magnetic field is, the larger the time scale of exhibiting the step structure does. The tunneling current may exhibit periodically oscillation behavior when the ratio of the transverse component of the magnetic field is smaller than that of the longitudinal component, otherwise it exhibits a damply oscillating behavior. This means that the dynamical spin localization can be adjusted by the external magnetic fields.

  7. Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

    Science.gov (United States)

    Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E; Hankiewicz, Ewelina M; Žutić, Igor

    2016-10-14

    We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

  8. Influence of intrinsic spin-flip processes on spin-polarized transport through quantum dots in the cotunneling regime

    International Nuclear Information System (INIS)

    Weymann, I.; Barnas, J.

    2006-01-01

    The influence of intrinsic spin relaxation on spin-polarized cotunneling through quantum dots coupled to ferromagnetic leads is analyzed theoretically. It is shown that the zero bias anomaly, which occurs due to the interplay of single-barrier and double-barrier cotunneling processes, becomes suppressed by spin relaxation processes on the dot. Diode-like features of the transport characteristics in the cotunneling regime have been found in asymmetrical systems. These features are also suppressed by the spin relaxation processes

  9. The effects of Dresselhaus and Rashba spin-orbit interactions on the electron tunneling in a non-magnetic heterostructure

    International Nuclear Information System (INIS)

    Lu Jianduo; Li Jianwen

    2010-01-01

    We theoretically investigate the electron transport properties in a non-magnetic heterostructure with both Dresselhaus and Rashba spin-orbit interactions. The detailed-numerical results show that (1) the large spin polarization can be achieved due to Dresselhaus and Rashba spin-orbit couplings induced splitting of the resonant level, although the magnetic field is zero in such a structure, (2) the Rashba spin-orbit coupling plays a greater role on the spin polarization than the Dresselhaus spin-orbit interaction does, and (3) the transmission probability and the spin polarization both periodically change with the increase of the well width.

  10. Spin Interactions and Cross-checks of Polarization in NH$_{3}$ Target

    CERN Document Server

    Kiselev, Yu; Doshita, N; Gautheron, F; Hess, Ch; Iwata, T; Koivuniemi, J; Kondo, K; Magnon, A; Mallot, G; Michigami, T; Meyer, W; Reicherz, G

    2008-01-01

    We study the magnetic structure of irradiated ammonia (NH$_{3}$) polarized by Dynamic Nuclear Polarization method at 0.2 K and at 2.5 T field. In this material, the electron spins, induced by ionizing radiation, couple $^{14}$N and $^{1}$H spins by the indirect spin-spin interaction. As a result, the local frequencies of $^{1}$H-spins are varied depending on $^{14}$N spin polarizations and lead to an asymmetry in the proton signal. This asymmetry allowes a good detection of $^{14}$N spins directly on the proton Larmor frequency. In the long COMPASS target at CERN, we use the cross-checks between spectral asymmetries and integral polarizations to decrease the relative error for longitudinal target polarizations up to $\\pm$2.0%.

  11. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

    Science.gov (United States)

    Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2018-03-01

    We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

  12. TOPICAL REVIEW: Highly spin-polarized materials and devices for spintronics

    Directory of Open Access Journals (Sweden)

    Koichiro Inomata et al.

    2008-01-01

    Full Text Available The performance of spintronics depends on the spin polarization of the current. In this study half-metallic Co-based full-Heusler alloys and a spin filtering device (SFD using a ferromagnetic barrier have been investigated as highly spin-polarized current sources. The multilayers were prepared by magnetron sputtering in an ultrahigh vacuum and microfabricated using photolithography and Ar ion etching. We investigated two systems of Co-based full-Heusler alloys, Co2Cr1 ? xFexAl (CCFA(x and Co2FeSi1 ? xAlx (CFSA(x and revealed the structure and magnetic and transport properties. We demonstrated giant tunnel magnetoresistance (TMR of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs using Co2FeSi0.5Al0.5 (CFSA(0.5 Heusler alloy electrodes. The 390% TMR corresponds to 0.81 spin polarization for CFSA(0.5 at 5 K. We also investigated the crystalline structure and local structure around Co atoms by x-ray diffraction (XRD and nuclear magnetic resonance (NMR analyses, respectively, for CFSA films sputtered on a Cr-buffered MgO (001 substrate followed by post-annealing at various temperatures in an ultrahigh vacuum. The disordered structures in CFSA films were clarified by NMR measurements and the relationship between TMR and the disordered structure was discussed. We clarified that the TMR of the MTJs with CFSA(0.5 electrodes depends on the structure, and is significantly higher for L21 than B2 in the crystalline structure. The second part of this paper is devoted to a SFD using a ferromagnetic barrier. The Co ferrite is investigated as a ferromagnetic barrier because of its high Curie temperature and high resistivity. We demonstrate the strong spin filtering effect through an ultrathin insulating ferrimagnetic Co-ferrite barrier at a low temperature. The barrier was prepared by the surface plasma oxidization of a CoFe2 film deposited on a MgO (001 single crystal substrate, wherein the spinel structure of CoFe2O4 (CFO

  13. Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

    Science.gov (United States)

    Wu, Zhenhua; Luo, Kun; Yu, Jiahan; Wu, Xiaobo; Lin, Liangzhong

    2018-02-01

    Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

  14. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  15. Spin-frustrated V3 and Cu3 nanomagnets with Dzialoshinsky-Moriya exchange. 2. Spin structure, spin chirality and tunneling gaps

    International Nuclear Information System (INIS)

    Belinsky, Moisey I.

    2009-01-01

    The spin chirality and spin structure of the Cu 3 and V 3 nanomagnets with the Dzialoshinsky-Moriya (DM) exchange interaction are analyzed. The correlations between the vector κ and the scalar χ chirality are obtained. The DM interaction forms the spin chirality which is equal to zero in the Heisenberg clusters. The dependences of the spin chirality on magnetic field and deformations are calculated. The cluster distortions reduce the spin chirality. The vector chirality is reduced partially and the scalar chirality vanishes in the transverse magnetic field. In the isosceles clusters, the DM exchange and distortions determine the sign and degree of the spin chirality κ. The correlations between the chirality parameters κ n and the intensities of the EPR and INS transitions are obtained. The vector chirality κ n describes the spin chirality of the Cu 3 and V 3 nanomagnets, the scalar chirality describes the pseudoorbital moment of the DM cluster. It is shown that in the consideration of the DM exchange, the spin states DM mixing and tunneling gaps at level crossing fields depend on the coordinate system of the DM model. The calculations in the DM exchange models in the right-handed and left-handed frame show opposite magnetic behavior at the level crossing field and allow to explain the opposite schemes of the tunneling gaps and levels crossing, which have been obtained in different treatments. The results of the DM model in the right-handed frame are consistent with the results of the group-theoretical analysis, whereas the results in the left-handed frame are inconsistent with that. The correlations between the spin chirality of the ground state and tunneling gaps at the level crossing field are obtained for the equilateral and isosceles nanoclusters.

  16. Quasi interference of perpendicularly polarized guided modes observed with a photon scanning tunneling microscope

    NARCIS (Netherlands)

    Balistreri, M.L.M.; Driessen, A.; Korterik, Jeroen P.; Kuipers, L.; van Hulst, N.F.

    2000-01-01

    The simultaneous detection of TE- as well as TM-polarized light with a photon scanning tunneling microscope leads to a quasi- interference pattern of these mutually perpendicular polarized fields. This interference pattern has been observed in the optical field distribution as a function of both

  17. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.; Letzring, S.; Skupsky, S.

    1993-01-01

    Our experimental efforts over the past 5 years have been aimed at cazrying out ICF shots with spin-polarized 0 fuel. We successfully prepared polarized 0 in HD, and solved the problems of loading target shells with our carefully prepared isotopic -rnixt.l.l?-es, polarizing them so that the 0 polarization remains metastably frozen-in for about half a day, and carrying out the various cold transfer requirements at Syracuse, where the target is prepared, and at Rochester, where the cold target is inserted fusion chamber. Upon shooting the accurately positioned unpolarized high density cold target, no neutron yield was observed. Inspection inside the OMEGA tank after the shot indicated the absence of neutron yield was dus to mal-timing or insufficient retraction rate of OMEGA'S fast shroud mechanism, resulting in interception of at least 20 of the 24 laser beams by the faulty shroud. In spits of this, all alements of the complex experiment we originally undertook have been successfully demonstrated, and the cold retrieval concepts and methods we developed are being utilized on the ICF upgrades at Rochester and at Livermore. In addition to the solution of the interface problems, we obtained novel results on polymer shell characteristics at low temperatures, and continuation of these experiments is c = ently supported by KLUP. Extensive additional mappings were ca=ied out of nuclear spin relaxation rates of H and D in solid HD in the temperature-magnetic field rangs of 0.01 to 4.2K and 0 - 13 Tesla. New phenomena were discovered, such as association of impurity clustering with very low temperature motion, and inequality of the growth-rate and decay-rate of the magnetization

  18. Role of spin polarized tunneling in magnetoresistance and low ...

    Indian Academy of Sciences (India)

    Lowering of ρ0 value (table 2) on application of magnetic field suggests that such imperfections are .... Soma Das and T K Dey. 636. Table 3. Best-fit parameters obtained from intergranular tun- neling model. H ρ0 ρ1 × 105. JS/KB. (Tesla). (Ω cm). (Ω cm K–3/2) ε. (K) x = 0⋅05. 0. 0⋅0731. 6⋅00. 0⋅4175. 95⋅61. 0⋅8.

  19. Role of spin polarized tunneling in magnetoresistance and low ...

    Indian Academy of Sciences (India)

    KMnO3 has been investigated between 10 K and 300 K with and without the magnetic field ( = 0.8 T). All the samples show metal–insulator transitions with Curie temperature (C) ranging between 260 K and 309 K. At temperature below 60 ...

  20. Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser

    Science.gov (United States)

    Holub, M.; Shin, J.; Saha, D.; Bhattacharya, P.

    2007-04-01

    A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.

  1. Spin and charge thermopower of resonant tunneling diodes

    Energy Technology Data Exchange (ETDEWEB)

    Nicolau, Javier H.; Sánchez, David [Institute for Cross-Disciplinary Physics and Complex Systems IFISC (UIB-CSIC), E-07122 Palma de Mallorca (Spain)

    2014-03-17

    We investigate thermoelectric effects in quantum well systems. Using the scattering approach for coherent conductors, we calculate the thermocurrent and thermopower both in the spin-degenerate case and in the presence of giant Zeeman splitting due to magnetic interactions in the quantum well. We find that the thermoelectric current at linear response is maximal when the well level is aligned with the Fermi energy and is robust against thermal variations. Furthermore, our results show a spin voltage generation in response to the applied thermal bias, giving rise to large spin Seebeck effects tunable with external magnetic fields, quantum well tailoring, and background temperature.

  2. Absence of a spin-signature from a single Ho adatom as probed by spin-sensitive tunneling.

    Science.gov (United States)

    Steinbrecher, M; Sonntag, A; dos Santos Dias, M; Bouhassoune, M; Lounis, S; Wiebe, J; Wiesendanger, R; Khajetoorians, A A

    2016-02-03

    Whether rare-earth materials can be used as single-atom magnetic memory is an ongoing debate in recent literature. Here we show, by inelastic and spin-resolved scanning tunnelling-based methods, that we observe a strong magnetic signal and excitation from Fe atoms adsorbed on Pt(111), but see no signatures of magnetic excitation or spin-based telegraph noise for Ho atoms. Moreover, we observe that the indirect exchange field produced by a single Ho atom is negligible, as sensed by nearby Fe atoms. We demonstrate, using ab initio methods, that this stems from a comparatively weak coupling of the Ho 4f electrons with both tunnelling electrons and substrate-derived itinerant electrons, making both magnetic coupling and detection very difficult when compared to 3d elements. We discuss these results in the context of ongoing disputes and clarify important controversies.

  3. Micromagnetic investigation of the dynamics of magnetization switching induced by a spin polarized current

    Science.gov (United States)

    Lee, Kyung-Jin; Dieny, Bernard

    2006-03-01

    Using micromagnetic modeling, we tested a prediction of single-domain spin-torque theory which switching current density depends only weakly on magnetic cell size. The switching time and current density are strongly affected by the cell size for low spin polarization. Larger samples with a small length-to-width ratio and small spin polarization can exhibit a nonmonotonous dependence of switching time on current. Excitation of incoherent spin waves caused by the circular Oersted field due to the current is responsible for this nonmonotonous dependence. However, the magnetic dynamics recovers a single-domain-like behavior when the spin polarization is high and/or the cell size is small.

  4. Peculiarities of spin polarization inversion at a thiophene/cobalt interface

    KAUST Repository

    Wang, Xuhui

    2013-03-20

    We perform ab initio calculations to investigate the spin polarization at the interface between a thiophene molecule and cobalt substrate. We find that the reduced symmetry in the presence of a sulfur atom (in the thiophene molecule) leads to a strong spatial dependence of the spin polarization of the molecule. The two carbon atoms far from the sulfur acquire a polarization opposite to that of the substrate, while the carbon atoms bonded directly to sulfur possess the same polarization as the substrate. We determine the origin of this peculiar spin interface property as well as its impact on the spin transport.

  5. Interplay between spin polarization and color superconductivity in high density quark matter

    DEFF Research Database (Denmark)

    Tsue, Yasuhiko; da Providência, João; Providência, Constança

    2013-01-01

    Here, it is suggested that a four-point interaction of the tensor type may lead to spin polarization in quark matter at high density. It is found that the two-flavor superconducting phase and the spin polarized phase correspond to distinct local minima of a certain generalized thermodynamical...... potential. It follows that a transition from one to the other phase occurs, passing through true minima with both a spin polarization and a color superconducting gap. It is shown that the quark spin polarized phase is realized at rather high density, while the two-flavor color superconducting phase...

  6. Optical Polarization Modulation and Gain Anisotropy in an Electrically Injected Spin Laser

    Science.gov (United States)

    Basu, D.; Saha, D.; Bhattacharya, P.

    2009-03-01

    The effects of spin-induced gain anisotropy on output polarization and threshold current reduction of electrically pumped spin-polarized lasers have been studied. Analytical forms of these parameters are derived by considering diffusive transport from the spin injector to the active region. The calculated values of the parameter are in excellent agreement with values obtained from measurements made at 200 K on an InAs/GaAs quantum dot spin-polarized vertical cavity surface-emitting laser. Electrical modulation of the output polarization of the laser is demonstrated with a peak modulation index of 0.6.

  7. RKKY interaction for the spin-polarized electron gas

    Science.gov (United States)

    Valizadeh, Mohammad M.; Satpathy, Sashi

    2015-11-01

    We extend the original work of Ruderman, Kittel, Kasuya and Yosida (RKKY) on the interaction between two magnetic moments embedded in an electron gas to the case where the electron gas is spin-polarized. The broken symmetry of a host material introduces the Dzyaloshinsky-Moriya (DM) vector and tensor interaction terms, in addition to the standard RKKY term, so that the net interaction energy has the form ℋ = JS1 ṡS2 + D ṡS1 ×S2 + S1 ṡΓ ↔ṡS2. We find that for the spin-polarized electron gas, a nonzero tensor interaction Γ ↔ is present in addition to the scalar RKKY interaction J, while D is zero due to the presence of inversion symmetry. Explicit expressions for these are derived for the electron gas both in 2D and 3D and we show that the net magnetic interaction can be expressed as a sum of Heisenberg and Ising like terms. The RKKY interaction exhibits a beating pattern, caused by the presence of the two Fermi momenta kF↑ and kF↓, while the R-3 distance dependence of the original RKKY result for the 3D electron gas is retained. This model serves as a simple example of the magnetic interaction in systems with broken symmetry, which goes beyond the RKKY interaction.

  8. Many-spin calculation of tunneling splittings in Mn12 magnetic molecules

    NARCIS (Netherlands)

    Raedt, H.A. De; Hams, A.H.; Dobrovitski, V.V.; Al-Saqer, M.; Katsnelson, M.I.; Harmon, B.N.

    2002-01-01

    We calculate the tunneling splittings in a Mn12 magnetic molecule taking into account its internal many-spin structure. We discuss the precision and reliability of these calculations and show that restricting the basis (limiting the number of excitations taken into account) may lead to significant

  9. Many-spin effects and tunneling splittings in Mn12 magnetic molecules

    NARCIS (Netherlands)

    Raedt, H.A. De; Hams, A.H.; Dobrovitski, V.V.; Al-Saqer, M.; Katsnelson, M.I.; Harmon, B.N.

    2002-01-01

    We calculate the tunneling splittings in a Mn12 magnetic molecule taking into account its internal many-spin structure. We discuss the precision and reliability of these calculations and show that restricting the basis (limiting the number of excitations taken into account) may lead to significant

  10. Micromagnetic Design of Spin Dependent Tunnel Junctions for Optimized Sensing Performance

    National Research Council Canada - National Science Library

    Tondra, Mark; Daughton, James M; Nordman, Catherine; Wang, Dexin; Taylor, John

    1999-01-01

    Pinned Spin Dependent Tunneling (SDT) devices have been fabricated into high sensitivity magnetic field sensors with many favorable properties including high sensitivity (̃ 10 umOe / Hz @ 1 Hz and ̃ 100 nOe / Hz @ > 10 kHz...

  11. Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

    Science.gov (United States)

    Sun, Jonathan Z.

    2016-10-01

    Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

  12. Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper

    Science.gov (United States)

    Yamanouchi, Michihiko; Chen, Lin; Kim, Junyeon; Hayashi, Masamitsu; Sato, Hideo; Fukami, Shunsuke; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo

    2013-05-01

    We show a three terminal magnetic tunnel junction (MTJ) with a 10-nm thick channel based on an interconnection material Cu with 10% Ir doping. By applying a current density of less than 1012 A m-2 to the channel, depending on the current direction, switching of a MTJ defined on the channel takes place. We show that spin transfer torque (STT) plays a critical role in determining the threshold current. By assuming the spin Hall effect in the channel being the source of the STT, the lower bound of magnitude of the spin Hall angle is evaluated to be 0.03.

  13. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

    Science.gov (United States)

    Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

  14. Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

    Directory of Open Access Journals (Sweden)

    Y Yousefi

    2018-02-01

    Full Text Available Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3 generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons. For this SMM, it is established that the use of quadrupole excitation (g dependence changes not only the location of the quenching points, but also the number of these points. Also, these quenching points are the steps in hysteresis loops of this SMM. If dipole and quadrupole excitations in classical energy considered, the number of these steps equals to the number that obtained from experimental data.

  15. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

    Science.gov (United States)

    Sato, Shoichi; Nakane, Ryosho; Hada, Takato; Tanaka, Masaaki

    2017-12-01

    We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (⩽2 nm) in Fe /Mg /MgO /n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observe the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si and estimate the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal is observed without the Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically dead layer at the Fe/MgO interface. We also observe clear spin transport signals, such as nonlocal Hanle signals and spin-valve signals, in a lateral four-terminal device with the same Fe /Mg /MgO /n+-Si tunnel junctions fabricated on a Si-on-insulator substrate. It is found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters: spin lifetime and spin polarization. Our analytical functions explain the experimental results very well. Our study shows the importance of suppressing a magnetically dead layer and provides a unified understanding of spin injection/detection signals in different device geometries.

  16. Circularly polarized near-field optical mapping of spin-resolved quantum Hall chiral edge states.

    Science.gov (United States)

    Mamyouda, Syuhei; Ito, Hironori; Shibata, Yusuke; Kashiwaya, Satoshi; Yamaguchi, Masumi; Akazaki, Tatsushi; Tamura, Hiroyuki; Ootuka, Youiti; Nomura, Shintaro

    2015-04-08

    We have successfully developed a circularly polarized near-field scanning optical microscope (NSOM) that enables us to irradiate circularly polarized light with spatial resolution below the diffraction limit. As a demonstration, we perform real-space mapping of the quantum Hall chiral edge states near the edge of a Hall-bar structure by injecting spin polarized electrons optically at low temperature. The obtained real-space mappings show that spin-polarized electrons are injected optically to the two-dimensional electron layer. Our general method to locally inject spins using a circularly polarized NSOM should be broadly applicable to characterize a variety of nanomaterials and nanostructures.

  17. Electron ionization and spin polarization control of Fe atom adsorbed graphene irradiated by a femtosecond laser

    International Nuclear Information System (INIS)

    Yu, Dong; Jiang, Lan; Wang, Feng; Li, Xin; Qu, Liangti; Lu, Yongfeng

    2015-01-01

    We investigate the structural properties and ionized spin electrons of an Fe–graphene system, in which the time-dependent density functional theory (TDDFT) within the generalized gradient approximation is used. The electron dynamics, including electron ionization and ionized electron spin polarization, is described for Fe atom adsorbed graphene under femtosecond laser irradiation. The theoretical results show that the electron ionization and ionized electron spin polarization are sensitive to the laser parameters, such as the incident angle and the peak intensity. The spin polarization presents the maximum value under certain laser parameters, which may be used as a source of spin-polarized electrons. - Highlights: • The structural properties of Fe–graphene system are investigated. • The electron dynamics of Fe–graphene system under laser irradiation are described. • The Fe–graphene system may be used as a source of spin-polarized electrons

  18. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.; Letzring, S.; Skupsky, S.

    1993-01-01

    The experimental efforts over the past 5 years have been aimed at carrying out ICF shots with spin-polarized D fuel. The authors successfully prepared polarized D in HD, and solved the problems of loading target shells with their carefully prepared isotopic mixtures, polarizing them so that the D polarization remains metastably frozen-in for about half a day, and carrying out the various cold transfer requirements at Syracuse, where the target is prepared, and at Rochester, where the cold target is inserted into the OMEGA fusion chamber. A principal concern during this past year was overcoming difficulties encountered in maintaining the integrity of the fragile cold target during the multitude of cold-transfers required for the experiment. These difficulties arose from insufficient rigidity of the cold transfer systems, which were constrained to be of small diameter by the narrow central access bore of the dilution refrigerator, and were exacerbated by the multitude of required target shell manipulations between different environments, each with different coupling geometry, including target shell permeation, polarization, storage, transport, retrieval and insertion into OMEGA. The authors did solve all of these problems, and were able to position a cold, high density but unpolarized target with required precision in OMEGA. Upon shooting the accurately positioned unpolarized high density cold target, no neutron yield was observed. Inspection inside the OMEGA tank after the shot indicated the absence of neutron yield was due to mal-timing or insufficient retraction rate of OMEGA's fast shroud mechanism, resulting in interception of at least 20 of the 24 laser beams by the faulty shroud. In spite of this, all elements of the complex experiment the authors originally undertook have been successfully demonstrated, and the cold retrieval concepts and methods they developed are being utilized on the ICF upgrades at Rochester and at Livermore

  19. Effects of microwave on spin tunneling in single-molecule magnets

    Science.gov (United States)

    Kim, Gwang-Hee; Kim, Tae-Suk

    2005-03-01

    We study theoretically the effects of the irradiated microwave on the magnetization in single-molecule magnets (SMMs) like V15 and Fe8. We find that the shape of magnetization depends on the microwave intensity as well as the microwave polarization. The applied microwave field enhances the tunneling probability. The linearly polarized microwaves induce the suppression of magnetization at both positive and negative magnetic fields. The circularly polarized microwaves are absorbed either at one direction of magnetic field or at both directions of magnetic fields, depending on the polarization directions with respect to the direction of longitudinal magnetic field. The generic features we found will be compared with the recent experimental results.

  20. Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

    Science.gov (United States)

    Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

    2018-04-01

    Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

  1. Spin matching conditions in large electron storage rings with purely horizontal beam polarization

    International Nuclear Information System (INIS)

    Rossmanith, R.

    1990-08-01

    In a storage ring with a purely horizontal spin and a Siberian Snake, the spin matching conditions are similar to the spin matching conditions for vertical polarization; a combination of beam bumps has to be found which compensate the depolarizing effects. These bumps compensate the random emission of synchrotron emission on the spin. The aim of this paper is to define spin matching conditions that compensate this effect

  2. Spin matching conditions in large electron storage rings with purely horizontal beam polarization

    Energy Technology Data Exchange (ETDEWEB)

    Rossmanith, R.

    1990-08-01

    In a storage ring with a purely horizontal spin and a Siberian Snake, the spin matching conditions are similar to the spin matching conditions for vertical polarization; a combination of beam bumps has to be found which compensate the depolarizing effects. These bumps compensate the random emission of synchrotron emission on the spin. The aim of this paper is to define spin matching conditions that compensate this effect.

  3. Observation of thermally driven field-like spin torque in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bose, Arnab, E-mail: arnabbose@ee.iitb.ac.in; Jain, Sourabh; Asam, Nagarjuna; Bhuktare, Swapnil; Singh, Hanuman; Tulapurkar, Ashwin A. [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Shukla, Amit Kumar; Konishi, Katsunori; Lam, Duc Duong; Fujii, Yuya; Miwa, Shinji; Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

    2016-07-18

    We report the thermally driven giant field-like spin-torque in magnetic tunnel junctions (MTJ) on application of heat current from top to bottom. The field-like term is detected by the shift of the magneto-resistance hysteresis loop applying temperature gradient. We observed that the field-like term depends on the magnetic symmetry of the MTJ. In asymmetric structures, with different ferromagnetic materials for free and fixed layers, the field-like term is greatly enhanced. Our results show that a pure spin current density of the order of 10{sup 9 }A/m{sup 2} can be produced by creating a 120 mK temperature difference across 0.9 nm thick MgO tunnelling barrier. Our results will be useful for writing MTJ and domain wall-based memories using thermally driven spin torque.

  4. Spin tunneling in magnetic molecules: Quasisingular perturbations and discontinuous SU(2) instantons

    Science.gov (United States)

    Keçecioğlu, Ersin; Garg, Anupam

    2003-02-01

    Spin coherent state path integrals with discontinuous semiclassical paths are investigated with special reference to a realistic model for the magnetic degrees of freedom in the Fe8 molecular solid. It is shown that such paths are essential to a proper understanding of the phenomenon of quenched spin tunneling in these molecules. In the Fe8 problem, such paths are shown to arise as soon as a fourth-order anisotropy term in the energy is turned on, making this term a singular perturbation from the semiclassical point of view. The instanton approximation is shown to quantitatively explain the magnetic field dependence of the tunnel splitting, as well as agree with general rules for the number of quenching points allowed for a given value of spin. A fairly accurate approximate formula for the spacing between quenching points is derived.

  5. Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

    Directory of Open Access Journals (Sweden)

    Fen Liu

    2016-08-01

    Full Text Available Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.

  6. Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor.

    Science.gov (United States)

    Bogan, A; Studenikin, S A; Korkusinski, M; Aers, G C; Gaudreau, L; Zawadzki, P; Sachrajda, A S; Tracy, L A; Reno, J L; Hargett, T W

    2017-04-21

    Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.

  7. Electron Tunneling in Lithium Ammonia Solutions Probed by Frequency-Dependent Electron-Spin Relaxation Studies

    Science.gov (United States)

    Maeda, Kiminori; Lodge, Matthew T.J.; Harmer, Jeffrey; Freed, Jack H.; Edwards, Peter P.

    2012-01-01

    Electron transfer or quantum tunneling dynamics for excess or solvated electrons in dilute lithium-ammonia solutions have been studied by pulse electron paramagnetic resonance (EPR) spectroscopy at both X- (9.7 GHz) and W-band (94 GHz) frequencies. The electron spin-lattice (T1) and spin-spin (T2) relaxation data indicate an extremely fast transfer or quantum tunneling rate of the solvated electron in these solutions which serves to modulate the hyperfine (Fermi-contact) interaction with nitrogen nuclei in the solvation shells of ammonia molecules surrounding the localized, solvated electron. The donor and acceptor states of the solvated electron in these solutions are the initial and final electron solvation sites found before, and after, the transfer or tunneling process. To interpret and model our electron spin relaxation data from the two observation EPR frequencies requires a consideration of a multi-exponential correlation function. The electron transfer or tunneling process that we monitor through the correlation time of the nitrogen Fermi-contact interaction has a time scale of (1–10)×10−12 s over a temperature range 230–290K in our most dilute solution of lithium in ammonia. Two types of electron-solvent interaction mechanisms are proposed to account for our experimental findings. The dominant electron spin relaxation mechanism results from an electron tunneling process characterized by a variable donor-acceptor distance or range (consistent with such a rapidly fluctuating liquid structure) in which the solvent shell that ultimately accepts the transferring electron is formed from random, thermal fluctuations of the liquid structure in, and around, a natural hole or Bjerrum-like defect vacancy in the liquid. Following transfer and capture of the tunneling electron, further solvent-cage relaxation with a timescale of ca. 10−13 s results in a minor contribution to the electron spin relaxation times. This investigation illustrates the great potential

  8. Electron tunneling in lithium-ammonia solutions probed by frequency-dependent electron spin relaxation studies.

    Science.gov (United States)

    Maeda, Kiminori; Lodge, Matthew T J; Harmer, Jeffrey; Freed, Jack H; Edwards, Peter P

    2012-06-06

    Electron transfer or quantum tunneling dynamics for excess or solvated electrons in dilute lithium-ammonia solutions have been studied by pulse electron paramagnetic resonance (EPR) spectroscopy at both X- (9.7 GHz) and W-band (94 GHz) frequencies. The electron spin-lattice (T(1)) and spin-spin (T(2)) relaxation data indicate an extremely fast transfer or quantum tunneling rate of the solvated electron in these solutions which serves to modulate the hyperfine (Fermi-contact) interaction with nitrogen nuclei in the solvation shells of ammonia molecules surrounding the localized, solvated electron. The donor and acceptor states of the solvated electron in these solutions are the initial and final electron solvation sites found before, and after, the transfer or tunneling process. To interpret and model our electron spin relaxation data from the two observation EPR frequencies requires a consideration of a multiexponential correlation function. The electron transfer or tunneling process that we monitor through the correlation time of the nitrogen Fermi-contact interaction has a time scale of (1-10) × 10(-12) s over a temperature range 230-290 K in our most dilute solution of lithium in ammonia. Two types of electron-solvent interaction mechanisms are proposed to account for our experimental findings. The dominant electron spin relaxation mechanism results from an electron tunneling process characterized by a variable donor-acceptor distance or range (consistent with such a rapidly fluctuating liquid structure) in which the solvent shell that ultimately accepts the transferring electron is formed from random, thermal fluctuations of the liquid structure in, and around, a natural hole or Bjerrum-like defect vacancy in the liquid. Following transfer and capture of the tunneling electron, further solvent-cage relaxation with a time scale of ∼10(-13) s results in a minor contribution to the electron spin relaxation times. This investigation illustrates the great

  9. Electron-spin filter and polarizer in a standing light wave

    Science.gov (United States)

    Ahrens, Sven

    2017-11-01

    We demonstrate the theoretical feasibility of spin-dependent diffraction and spin polarization of an electron in two counterpropagating, circularly polarized laser beams. The spin dynamics appears in a two-photon process of the Kapitza-Dirac effect in the Bragg regime. We show the spin dependence of the diffraction process by comparison of the time evolution of spin-up and spin-down electrons in a relativistic quantum simulation. We further discuss the spin properties of the scattering by studying an analytically approximated solution of the time-evolution matrix. A classification scheme in terms of unitary or nonunitary propagation matrices is used for establishing a generalized and spin-independent description of the spin properties in the diffraction process.

  10. Injection and detection of a spin-polarized current in a light-emitting diode

    Science.gov (United States)

    Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

    1999-12-01

    The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

  11. Conductance and spin polarization for a quantum wire with the competition of Rashba and Dresselhaus spin-orbit coupling

    International Nuclear Information System (INIS)

    Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui

    2010-01-01

    We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.

  12. Direct injection of spin-polarized carriers across YBa 2 Cu 3 O 7- ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 58; Issue 5-6. Direct injection of spin-polarized ... from the CMR layer is 38 mA. This clearly shows that spin-polarized quasiparticles injected from the CMR layer into the YBCO layer suppress the critical current of the superconductor via the pair-breaking phenomena.

  13. Microscopic theory of fully spin-polarized /sup 3/He

    Energy Technology Data Exchange (ETDEWEB)

    Glyde, H.R.; Hernadi, S.I.

    1983-01-01

    The ground state energy (E), Landau parameters (F) and single particle energy spectrum (epsilon(kappa) and m/sup */) in fully spin polarized liquid /sup 3/He (/sup 3/He) are calculated directly from the bare interatomic potential within the Galitskii-Feynmann T-matrix and Hartree-Fock (GFHF) approximations. The E agrees well with variational calculations, the F with model calculations and the epsilon(kappa) and m/sup */ with results expected from nuclear matter. This suggests the effective interaction in /sup 3/He is dominated by hard core repulsion and Fermi statistics and that these components of the full interaction can be well described from first principles by a GF T-matrix. 36 references, 3 figures, 1 table.

  14. Nuclear reactivity indices in the context of spin polarized density functional theory

    International Nuclear Information System (INIS)

    Cardenas, Carlos; Lamsabhi, Al Mokhtar; Fuentealba, Patricio

    2006-01-01

    In this work, the nuclear reactivity indices of density functional theory have been generalized to the spin polarized case and their relationship to electron spin polarized indices has been established. In particular, the spin polarized version of the nuclear Fukui function has been proposed and a finite difference approximation has been used to evaluate it. Applications to a series of triatomic molecules demonstrate the ability of the new functions to predict the geometrical changes due to a change in the spin multiplicity. The main equations in the different ensembles have also been presented

  15. Spin-polarized semiconductor induced by magnetic impurities in graphene

    Science.gov (United States)

    Daghofer, Maria

    2011-03-01

    Magnetic impurities adsorbed on graphene sheets are coupled antiferromangetically via the itinerant electrons in the graphene. We study this interaction and its impact on the electrons' spectral density by use of unbiased Monte-Carlo simulations. The antiferromagnetic order breaks the symmetry between the sublattices, and a gap for the itinerant electrons opens. Our simulations show that the itinerant states below and above the gap are not dispersionless states trapped by the impurities, but are instead mobile states with a large dispersion. We compare various scenarios for the impurity distribution and find that random doping produces a standard semiconductor. If, on the other hand, all or most of the impurities are localized in the same sublattice, the spin degeneracy is lifted and the conduction band becomes spin-polarized. We also discuss the properties of edge states at edges or magnetic domain boundaries. M.~Daghofer, N.~Zheng, A.~Moreo; Phys.~Rev.~B 82, 121405(R) (2010) Supported by the DFG under the Emmy-Noether Program, and the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. DOE.

  16. Magnetized boxes for housing polarized spins in homogeneous fields.

    Science.gov (United States)

    Hiebel, S; Grossmann, T; Kiselev, D; Schmiedeskamp, J; Gusev, Y; Heil, W; Karpuk, S; Krimmer, J; Otten, E W; Salhi, Z

    2010-05-01

    We present novel types of permanently magnetized as well as current powered boxes built from soft-ferromagnetic materials. They provide shielded magnetic fields which are homogeneous within a large fraction of the enclosed volume, thus minimizing size, weight, and costs. For the permanently magnetized solutions, homogenization is achieved either by an optimized distribution of the permanent field sources or by jacketing the field with a soft-ferromagnetic cylindrical shell which is magnetized in parallel to the enclosed field. The latter principle may be applied up to fields of about 0.1T. With fields of about 1mT, such boxes are being used for shipping spin-polarized (3)He worldwide for MRI purposes. For current powered boxes, we present concepts and realizations of uniaxial and tri-axial shielded magnetic fields which are homogeneous on the level of 10(-4) within the entire shielded volume. This is achieved by inserting tightly fitting solenoids into a box from soft-magnetic material. The flexible tri-axial solution suits in particular laboratory applications, e.g. for establishing a spin quantization axis. Copyright 2010 Elsevier Inc. All rights reserved.

  17. Spin dependent tunneling through a quantum dot attached to ferromagnetic electrodes with non-collinear magnetizations

    International Nuclear Information System (INIS)

    Wawrzyniak, M.; Gmitra, M.; Barnas, J.

    2006-01-01

    Resonant tunneling through an interacting single-level quantum dot, coupled to ferromagnetic electrodes with non-collinear magnetizations has been analyzed theoretically. The dot is additionally subject to an external magnetic field. The non-equilibrium Green function technique and the equation of motion method have been applied to calculate electric current, tunnel magnetoresistance, and the average spin components in the dot. The relevant Green functions have been calculated in the Hartree-Fock approximation, and the calculations are restricted to the weak coupling regime. Numerical results are presented for a dot which is empty at equilibrium, but can be singly or doubly occupied when a bias voltage is applied

  18. Polarization-dependent tunneling of light in gradient optics

    Czech Academy of Sciences Publication Activity Database

    Shvartsburg, A. B.; Kuzmiak, Vladimír; Petite, G.

    2007-01-01

    Roč. 76, č. 1 (2007), 016603.1-01663.11 ISSN 1539-3755 R&D Projects: GA MŠk(CZ) OC P11.001 Institutional research plan: CEZ:AV0Z20670512 Keywords : wave propagation * tunnelling Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.483, year: 2007

  19. Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.

    2013-06-01

    We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.

  20. Excitation of bond-alternating spin-1/2 Heisenberg chains by tunnelling electrons

    International Nuclear Information System (INIS)

    Gauyacq, J-P; Lorente, N

    2014-01-01

    Inelastic electron tunneling spectra (IETS) are evaluated for spin-1/2 Heisenberg chains showing different phases of their spin ordering. The spin ordering is controlled by the value of the two different Heisenberg couplings on the two sides of each of the chain's atoms (bond-alternating chains). The perfect anti-ferromagnetic phase, i.e. a unique exchange coupling, marks a topological quantum phase transition (TQPT) of the bond-alternating chain. Our calculations show that the TQPT is recognizable in the excited states of the chain and hence that IETS is in principle capable of discriminating the phases. We show that perfectly symmetric chains, such as closed rings mimicking infinite chains, yield the same spectra on both sides of the TQPT and IETS cannot reveal the nature of the spin phase. However, for finite size open chains, both sides of the TQPT are associated with different IETS spectra, especially on the edge atoms, thus outlining the transition. (paper)

  1. Comparison of Magnetization Tunneling in the Giant-Spin and Multi-Spin Descriptions of Single-Molecule Magnets

    Science.gov (United States)

    Liu, Junjie; Del Barco, Enrique; Hill, Stephen

    2010-03-01

    We perform a mapping of the spectrum obtained for a triangular Mn3 single-molecule magnet (SMM) with idealized C3 symmetry via exact diagonalization of a multi-spin (MS) Hamiltonian onto that of a giant-spin (GS) model which assumes strong ferromagnetic coupling and a spin S = 6 ground state. Magnetic hysteresis measurements on this Mn3 SMM reveal clear evidence that the steps in magnetization due to magnetization tunneling obey the expected quantum mechanical selection rules [J. Henderson et al., Phys. Rev. Lett. 103, 017202 (2009)]. High-frequency EPR and magnetization data are first fit to the MS model. The tunnel splittings obtained via the two models are then compared in order to find a relationship between the sixth order transverse anisotropy term B6^6 in GS model and the exchange constant J coupling the Mn^III ions in the MS model. We also find that the fourth order transverse term B4^3 in the GS model is related to the orientation of JahnTeller axes of Mn^III ions, as well as J

  2. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  3. Spin polarization and magnetic effects in radical reactions

    International Nuclear Information System (INIS)

    Salikhov, K.M.; Molin, Yu.N.; Sagdeev, R.Z.; Buchachenko, A.L.

    1984-01-01

    Studies on the effects of chemically induced dynamic nuclear and electron polarizations (CIDNP and CIDEP), and magnetic effects in radical reactions, have given rise to a new rapidly-progressing field of chemical physics. It came into being about ten years ago and has been attracting the ever-growing attention of researchers in related areas. The present book is a fairly all-embracing review of the state of affairs in this field. The book presents the physical background (both theoretical and experimental) of CIDNP and CIDEP, of the effects of an external magnetic field and magnetic nuclear moment (magnetic isotope effects) on radical reactions in solutions. Great attention has been paid to the application of chemical spin polarization and magnetic effects to solving various problems of chemical kinetics, structural chemistry, molecular physics, magnetobiology, and radiospectroscopy. The book will be useful for physicists, chemists and biologists employing CIDNP, CIDEP and magnetic effects in their investigations, as well as for researchers in related fields of chemical physics. The book can be also recommended for postgraduates and senior undergraduate students. (Auth.)

  4. Intense source of spin-polarized electrons using laser-induced optical pumping

    International Nuclear Information System (INIS)

    Gray, L.G.; Giberson, K.W.; Cheng, C.; Keiffer, R.S.; Dunning, F.B.; Walters, G.K.

    1983-01-01

    A source of spin-polarized electrons based on a laser-pumped flowing helium afterglow is described. He(2 3 S) atoms contained in the afterglow are optically pumped using circularly polarized 1.08-μm (2 3 S→2 3 P) radiation provided by a NaF (F 2+ )( color-center laser. Spin angular momentum conservation in subsequent chemi-ionization reactions with CO 2 produces polarized electrons that are extracted from the afterglow. At low currents, < or approx. =1 μA, polarizations of approx.70%--80% are achieved. At higher currents the polarization decreases, falling to approx.40% at 50 μA. The spin polarization can be simply reversed (P→-P) and the source is suitable for use in the majority of low-energy spin-dependent scattering experiments proposed to date

  5. Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier

    Directory of Open Access Journals (Sweden)

    Nanni Luca

    2017-11-01

    Full Text Available This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier. If the energy difference between the barrier and the particle is positive, and the barrier width is large enough, there is proof that the tunneling may be superluminal. For first spinor components of particle and antiparticle states, the tunneling is always superluminal regardless the barrier width. Conversely, the second spinor components of particle and antiparticle states may be either subluminal or superluminal depending on the barrier width. These results derive from studying the tunneling time in terms of phase time. For the first spinor components of particle and antiparticle states, it is always negative while for the second spinor components of particle and antiparticle states, it is always positive, whatever the height and width of the barrier. In total, the tunneling time always remains positive for particle states while it becomes negative for antiparticle ones. Furthermore, the phase time tends to zero, increasing the potential barrier both for particle and antiparticle states. This agrees with the interpretation of quantum tunneling that the Heisenberg uncertainty principle provides. This study’s results are innovative with respect to those available in the literature. Moreover, they show that the superluminal behaviour of particles occurs in those processes with high-energy confinement.

  6. Spin structure function measurements with polarized protons and electrons at HERA

    International Nuclear Information System (INIS)

    Ball, R.D.; Deshpande, A.; Forte, S.; Hughes, V.W.; Lichtenstadt, J.; Ridolfi, G.

    1995-01-01

    Useful insights into the spin structure functions of the nucleon can be achieved by measurements of spin-dependent asymmetries in inclusive scattering of high energy polarized electrons by high energy polarized protons at HERA. Such an experiment would be a natural extension of the polarized lepton-nucleon scattering experiments presently carried out at CERN and SLAC. We present here estimates of possible data in the extended kinematic range of HERA and associated statistical errors. (orig.)

  7. Edge-state-dependent tunneling of dipole-exchange spin waves in submicrometer magnetic strips with an air gap.

    Science.gov (United States)

    Xing, X J; Zhang, D; Li, S W

    2012-12-14

    We have investigated the tunneling of dipole-exchange spin waves across an air gap in submicrometer-sized permalloy magnetic strips by means of micromagnetic simulations. The magnetizations beside the gap could form three distinct end-domain states with various strengths of dipolar coupling. Spin-wave tunneling through the gap at individual end-domain states is studied. It is found that the tunneling behavior is strongly dependent on these domain states. Nonmonotonic decay of transmission of spin waves with the increase of the gap width is observed. The underlying mechanism for these behaviors is proposed. The tunneling characteristics of the dipole-exchange spin waves differ essentially from those of the magnetostatic ones reported previously.

  8. Manipulating the spin states in a double molecular magnets tunneling junction

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Liang; Liu, Xi [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Zhengzhong, E-mail: zeikeezhang@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123 (China); Wang, Ruiqiang [Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006 (China)

    2014-01-17

    We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology and has potential applications in molecular spintronics or quantum information processing.

  9. Manipulating the spin states in a double molecular magnets tunneling junction

    Science.gov (United States)

    Jiang, Liang; Liu, Xi; Zhang, Zhengzhong; Wang, Ruiqiang

    2014-01-01

    We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology [6] and has potential applications in molecular spintronics or quantum information processing.

  10. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

    Science.gov (United States)

    Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

    2017-11-01

    The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

  11. Spin-Hall conductivity and electric polarization in metallic thin films

    KAUST Repository

    Wang, Xuhui

    2013-02-21

    We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

  12. Dimensionality effects on spin-polarized quantum beats in ferromagnetic hosts with a pair of side-coupled impurities

    Energy Technology Data Exchange (ETDEWEB)

    Guessi, L.H.; Leandro, S.C.; Seridonio, A.C.; Siqueira, E.C. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Ilha Solteira, SP (Brazil). Dept. de Fisico Quimica; Souza, F.M.; Vernek, E. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Yoshida, M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Rio Claro, SP (Brazil); Figueira, M.S. [Universidade Federal Fluminense (UFF), Niteroi, RJ (Brazil). Inst. de Fisica

    2012-07-01

    Full text: In this work, we report a theoretical description of the differential conductance in the low bias regime, for a normal scanning tunneling microscope (STM) probe in the presence of ferromagnetic (FM) hosts with impurities. The hosts are treated as a spin-polarized electron gas hybridized to a pair of side-coupled impurities. Two setups of different dimensionalities are considered, a quantum wire (QW) and a metallic surface (MS). In order to deal with the non-interacting and the Coulomb blockade regimes of these systems, the analysis is done in the framework of the two-impurity Anderson model (TIAM) in combination with the equation of motion (EOM) approach for the Hamiltonian Green functions (GFs). The Fano effect appears in such setups, due to the quantum interference between the transport channels composed by the spin-polarized conduction bands and the electron tunneling into (or out of) the impurities. Thus the conductance of the STM reveals as a function of the probe position, a Fano interference strong dependent on the host dimensionality. It leads to the emergence of spin-polarized quantum beats in the Friedel oscillations for the conductance signal, which are uniform in the QW system in opposite to those found in the MS case, characterized by a long-range damped behavior. We remark that, the energy levels of the impurities and the Coulomb repulsion, modulate these beats. As a result, they establish a scenario where the interplay between the Coulomb blockade and the ferromagnetism of a metallic environment, can be useful for future quantum computation devices. (author)

  13. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Directory of Open Access Journals (Sweden)

    Robert Göckeritz

    2016-04-01

    Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  14. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany)

    2016-04-15

    Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  15. Transport tunnel polarisé en spin dans dans le système épitaxié Fe/MgO/Fe : Interactions magnétiques et Symétries électroniques

    OpenAIRE

    FAURE-VINCENT, Jerome

    2004-01-01

    Jury: B. Dieny, H. Dreyssé, A. George, P. Grünberg,A. Schuhl,E. Snoeck,C. Tiusan; Monocrystalline Fe(100)/MgO(100)/Fe(100) magnetic tunnel junctions (MTJ), elaborated by Molecular Beam Epitaxy constitute ideal systems for validation of specific concepts related to the spin polarized transport in crystalline multilayers. The analysis of the band structure shows that the Fe(100) behaves as a half-metal with respect to the D1 electronic symmetry; this new concept of spin polarization/filtering i...

  16. Spin Dynamics and Quantum Tunneling in Fe8 Nanomagnet and in AFM Rings by NMR

    Energy Technology Data Exchange (ETDEWEB)

    Ho-Baek, Seung [Iowa State Univ., Ames, IA (United States)

    2004-01-01

    In this thesis, our main interest has been to investigate the spin dynamics and quantum tunneling in single molecule magnets (SMMs), For this we have selected two different classes of SMMs: a ferrimagnetic total high spin S = 10 cluster Fe8 and antiferromagnetic (AFM) ring-type clusters. For Fe8, our efforts have been devoted to the investigation of the quantum tunneling of magnetization in the very low temperature region. The most remarkable experimental finding in Fe8 is that the nuclear spin-lattice relaxation rate (1/T{sub l}) at low temperatures takes place via strong collision mechanism, and thus it allows to measure directly the tunneling rate vs T and H for the first time. For AFM rings, we have shown that 1/T{sub l} probes the thermal fluctuations of the magnetization in the intermediate temperature range. We find that the fluctuations are dominated by a single characteristic frequency which has a power law T-dependence indicative of fluctuations due to electron-acoustic phonon interactions.

  17. Spin Dynamics and Quantum Tunneling in Fe8 Nanomagnet and in AFM Rings by NMR

    International Nuclear Information System (INIS)

    Seung-Ho-Baek

    2004-01-01

    In this thesis, our main interest has been to investigate the spin dynamics and quantum tunneling in single molecule magnets (SMMs), For this we have selected two different classes of SMMs: a ferrimagnetic total high spin S = 10 cluster Fe8 and antiferromagnetic (AFM) ring-type clusters. For Fe8, our efforts have been devoted to the investigation of the quantum tunneling of magnetization in the very low temperature region. The most remarkable experimental finding in Fe8 is that the nuclear spin-lattice relaxation rate (1/T l ) at low temperatures takes place via strong collision mechanism, and thus it allows to measure directly the tunneling rate vs T and H for the first time. For AFM rings, we have shown that 1/T l probes the thermal fluctuations of the magnetization in the intermediate temperature range. We find that the fluctuations are dominated by a single characteristic frequency which has a power law T-dependence indicative of fluctuations due to electron-acoustic phonon interactions

  18. Spin dynamics and quantum tunneling in Fe8 nanomagnet and in AFM rings by NMR

    Science.gov (United States)

    Baek, Seung-Ho

    In this thesis, our main interest has been to investigate the spin dynamics and quantum tunneling in single molecule magnets (SMMs). For this we have selected two different classes of SMMs: a ferromagnetic total high spin S = 10 cluster Fe8 and antiferromagnetic (AFM) ring-type clusters. For Fe8, our efforts have been devoted to the investigation of the quantum tunneling of magnetization in the very low temperature region. The most remarkable experimental finding in Fe8 is that the nuclear spin-lattice relaxation rate (1/T1) at low temperatures takes place via strong collision mechanism, and thus it allows to measure directly the tunneling rate vs. T and H for the first time. For AFM rings, we have shown that 1/T1 probes the thermal fluctuations of the magnetization in the intermediate temperature range. We find that the fluctuations are dominated by a single characteristic frequency which has a power-law T-dependence indicative of fluctuations due to electron-acoustic phonon interactions.

  19. Biaxial-stress-driven full spin polarization in ferromagnetic hexagonal chromium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Xiang-Bo; Li, Jun [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Liu, Bang-Gui, E-mail: bgliu@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190 (China)

    2017-03-15

    It is important to spintronics to achieve fully-spin-polarized magnetic materials that are stable and can be easily fabricated. Here, through systematical density-functional-theory investigations, we achieve high and even full spin polarization for carriers in the ground-state phase of CrTe by applying tensile biaxial stress. The resulting strain is tensile in the xy plane and compressive in the z axis. With the in-plane tensile strain increasing, the ferromagnetic order is stable against antiferromagnetic fluctuations, and a half-metallic ferromagnetism is achieved at an in-plane strain of 4.8%. With the spin-orbit coupling taken into account, the spin polarization is equivalent to 97% at the electronic transition point, and then becomes 100.0% at the in-plane strain of 6.0%. These make us believe that the full-spin-polarized ferromagnetism in this stable and easily-realizable hexagonal phase could be realized soon, and applied in spintronics. - Highlights: • Full spin polarization in the hexagonal ground-state phase of CrTe by biaxial stress. • The stress produces in-plane tensile strain and perpendicular compressive strain. • Reliable electronic structure is calculated with improved exchange functional. • Spin polarization is calculated with spin-orbit coupling taken into account.

  20. Defect-enhanced Rashba spin-polarized currents in carbon nanotubes

    Science.gov (United States)

    Santos, Hernán; Chico, Leonor; Alvarellos, J. E.; Latgé, A.

    2017-10-01

    The production of spin-polarized currents in pristine carbon nanotubes with Rashba spin-orbit interactions has been shown to be very sensitive to the symmetry of the tubes and the geometry of the setup. Here we analyze the role of defects on the spin quantum conductances of metallic carbon nanotubes due to an external electric field. We show that localized defects, such as adsorbed hydrogen atoms or pentagon-heptagon pairs, increase the Rashba spin-polarized current. Moreover, this enhancement takes place for energies closer to the Fermi energy as compared to the response of pristine tubes. Such increments can be even larger when several equally spaced defects are introduced into the system. We explore different arrangements of defects, showing that for certain geometries there are flips of the spin-polarized current and even transport suppression. Our results indicate that spin valve devices at the nanoscale may be achieved via defect engineering in carbon nanotubes.

  1. Efficient spin transfer phenomena in Fe/MgO/GaAs structure.

    Science.gov (United States)

    Park, Y J; Hickey, M C; Van Veenhuizen, M J; Chang, J; Heiman, D; Perry, C H; Moodera, J S

    2011-03-23

    The efficiency of spin polarized charge transfer was investigated in an Fe/MgO tunnel barrier/GaAs based structure using spin dependent photocurrent measurements, whereby a spin imbalance in carrier population was generated in the GaAs by circularly polarized light. The dominance of tunneling transport processes over Schottky emission gave rise to a high spin transfer efficiency of 35% under the photovoltaic mode of device operation. A spin dependent tunneling conductance associated with spin polarized electron transport was identified by the observation of phase changes. This transport prevails over the unpolarized electron and hole conduction over the bias range which corresponds to flat band conditions.

  2. Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

    Science.gov (United States)

    Yang, Yang; Wu, Zhenhua; Yang, Wen; Li, Jun; Chen, Songyan; Li, Cheng

    2017-06-01

    We theoretically investigate the spin injection in different ferromagnet/insulator/n-Si tunnel contacts by using the lattice non-equilibrium Green’s function method. We find that the tunnel contacts with low-barrier materials such as TiO2 and Ta2O5 have far lower resistances than the conventional-barrier materials, resulting in a wider and attainable optimum parameters window for improving the spin-injection efficiency and magnetoresistance ratio of a vertical-spin metal-oxide-semiconductor field-effect transistor. Additionally, we find that the spin-asymmetry coefficient of the TiO2 tunnel contact has a negative value, while that of the Ta2O5 contact can be tuned between positive and negative values by changing the parameters.

  3. Laser-driven source of spin-polarized atomic hydrogen and deuterium

    International Nuclear Information System (INIS)

    Poelker, M.

    1995-01-01

    A laser-driven source of spin-polarized hydrogen (H) and deuterium (D) that relies on the technique of optical pumping spin exchange has been constructed. In this source, H or D atoms and potassium atoms flow continuously through a drifilm-coated spin-exchange cell where potassium atoms are optically pumped with circularly-polarized laser light in a high magnetic field. The H or D atoms become polarized through spin-exchange collisions with polarized potassium atoms. High electron polarization (∼80%) has been measured for H and D atoms at flow rates ∼2x10 17 atoms/s. Lower polarization values are measured for flow rates exceeding 1x10 18 atoms/s. In this paper, we describe the performance of the laser-driven source as a function of H and D atomic flow rate, magnetic field strength, alkali density and pump-laser power. Polarization measurements as a function of flow rate and magnetic field suggest that, despite a high magnetic field, atoms within the optical-pumping spin-exchange apparatus evolve to spin-temperature equilibrium which results in direct polarization of the H and D nuclei. (orig.)

  4. Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

    Science.gov (United States)

    He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

    2013-10-07

    The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

  5. Spontaneous spin-polarization and phase transition in the relativistic approach

    International Nuclear Information System (INIS)

    Maruyama, Tomoyuki; Tatsumi, Toshitaka

    2001-01-01

    We study the spin-polarization mechanism in the highly dense nuclear matter with the relativistic mean-field approach. In the relativistic Hartree-Fock framework we find that there are two kinds of spin-spin interaction channels, which are the axial-vector and tensor exchange ones. If each interaction is strong and different sign, the system loses the spherical symmetry and holds the spin-polarization in the high-density region. When the axial-vector interaction is negative enough, the system holds ferromagnetism. (author)

  6. Spin-polarization reversal at the interface between benzene and Fe(100)

    KAUST Repository

    Goumri-Said, Souraya

    2013-01-03

    The spin-polarization at the interface between Fe(100) and a benzene is investigated theoretically using density functional theory for two positions of the organic molecule: planar and perpendicular with respect to the substrate. The electronic and magnetic properties as well as the spin-polarization close to the Fermi level strongly depend on the benzene position on the iron surface. An inversion of the spin-polarization is induced by p-d hybridization and charge transfer from the iron to the carbon sites in both configurations.

  7. Polarized photoproduction from nuclear targets with arbitrary spin and relation to deep inelastic scattering

    International Nuclear Information System (INIS)

    Hoodbhoy, P.; Massachusetts Inst. of Tech., Cambridge; Quaid-i-Azam Univ., Islamabad

    1990-01-01

    Inclusive photo-production from polarized targets of arbitrary spin is analyzed by using multipoles. The Drell-Hearn-Gerasimov sum rule, which was originally fromulated for spin-1/2 targets, is generalized to all spins and multipoles, and shown to have some interesting consequences. Measurements to test the new rules, or to derive nuclear structure information from them, could be incorporated into existing plans at electron accelerator facilities. Finally, the possible relevance of these generalized sum rules to sum rules measurable in polarized lepton-polarized target deep inelastic inclusive scattering is discussed. (orig.)

  8. Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

    Science.gov (United States)

    Carnevale, S. D.; Marginean, C.; Phillips, P. J.; Kent, T. F.; Sarwar, A. T. M. G.; Mills, M. J.; Myers, R. C.

    2012-04-01

    Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry, these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure, and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5 × 105 A/cm2.

  9. Spin transfer matrix formulation and snake resonances for polarized proton beams

    International Nuclear Information System (INIS)

    Tepikian, S.

    1986-01-01

    The polarization of a spin polarized proton beam in a circular accelerator is described by a spin transfer matrix. Using this method, they investigate three problems: (1) the crossing of multiple spin resonances, (2) resonance jumping and (3) an accelerator with Siberian snakes. When crossing two (or more) spin resonances, there are no analytic solutions available. However, they can obtain analytic expressions if the two spin resonances are well separated (nonoverlapping) or very close together (overlapping). Between these two extremes they resort to numerical solution of the spin equations. Resonance jumping can be studied using the tools developed for analyzing the cross of multiple spin resonances. These theoretical results compare favorably with experimental results obtained from the AGS at Brookhaven. For large accelerators, resonance jumping becomes impractical and other methods such as Siberian snakes must be used to keep the beam spin polarized. An accelerator with Siberian snakes and isolated spin resonances can be described with a spin transfer matrix. From this, they find a new type of spin depolarizing resonance, called snake resonances

  10. Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

    KAUST Repository

    Manchon, Aurelien

    2010-11-15

    The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

  11. Resonant coherent quantum tunneling of the magnetization of spin-systems: Spin-parity effects

    NARCIS (Netherlands)

    Garcia-Pablos, D; Garcia, N; de Raedt, H.A.

    1997-01-01

    We perform quantum dynamical calculations to study the reversal of the magnetization for systems of a few the presence of an external magnetic field at T=0 and with no dissipation. Collective quantum tunneling of the magnetization is demonstrated to occur only for some specific resonant values of

  12. Electric field induced spin polarization oscillation in nonmagnetic benzene/Cu(100) interface: First principles calculations

    Science.gov (United States)

    Yuan, X. B.; Cai, L. L.; Tian, Y. L.; Hu, G. C.; Ren, J. F.

    2018-01-01

    First-principles calculation are presented to study the influences of external electric fields on the spin polarization properties of benzene/Cu(100) system which do not contain any magnetic atom. Our simulations show that an obvious spontaneous spin polarization oscillation occurred in the benzene molecule when the electric fields are applied. The density of states (DOS), spin density distributions, charge transfer properties are also obtained. It is found that the p-d orbital coupling between the benzene molecule and the electrode leads to spin non-degeneration of the DOS near the fermi energy, so the transferred charges from the Cu atoms to the molecule will fill these spin non-degenerate coupled orbitals, and then the benzene molecule becomes spin polarized. The strength of the p-d orbital coupling as well as the transferred charges oscillated with the external electric fields, which induce spin polarization oscillation. The results are favorable for the understanding of spin polarization properties in organic/nonmagnetic metal structures.

  13. Huge spin-driven polarizations at room temperature in bulk BiFeO3

    Science.gov (United States)

    Lee, Jun Hee; Fishman, Randy

    2015-03-01

    Although BiFeO3 is one of the most investigated multiferroics, its magnetoelectricity and spin-driven polarizations are barely understood on an atomistic level. By combining a first-principles approach with a spin-cycloid model, we report hidden but huge spin-driven polarizations at room temperature in bulk BiFeO3. One of the polarizations reaches ~ 0.03 C/m2, which is larger than any other spin-driven polarization in a bulk material by one order of magnitude. By comparing our results with intrinsic measurements such as neutron scattering, Raman spectroscopy, IR directional dichroism, and high magnetic-field measurements, we disentangle all the hidden spin-driven polarizations due to exchange-striction, spin-current, and single-ion-anisotropy. We find that the broken inversion symmetries of the R3c structure of BiFeO3 induce the strong response of the magnetic couplings to an electric field and are responsible for the associated huge spin-driven polarizations. This research is sponsored by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division and by the Scientific User Facilities Division, Office of Basic Energy Sciences, US Department of Energy.

  14. Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

    Science.gov (United States)

    Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

    2018-01-01

    We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.

  15. Circularly polarized light emission in scanning tunneling microscopy of magnetic systems

    International Nuclear Information System (INIS)

    Apell, S.P.; Penn, D.R.; Johansson, P.

    2000-01-01

    Light is produced when a scanning tunneling microscope is used to probe a metal surface. Recent experiments on cobalt utilizing a tungsten tip found that the light is circularly polarized; the sense of circular polarization depends on the direction of the sample magnetization, and the degree of polarization is of order 10%. This raises the possibility of constructing a magnetic microscope with very good spatial resolution. We present a theory of this effect for iron and cobalt and find a degree of polarization of order 0.1%. This is in disagreement with the experiments on cobalt as well as previous theoretical work which found order of magnitude agreement with the experimental results. However, a recent experiment on iron showed 0.0±2%. We predict that the use of a silver tip would increase the degree of circular polarization for a range of photon energies

  16. Multispin-assisted optical pumping of bulk 13C nuclear spin polarization in diamond

    Science.gov (United States)

    Pagliero, Daniela; Rao, K. R. Koteswara; Zangara, Pablo R.; Dhomkar, Siddharth; Wong, Henry H.; Abril, Andrea; Aslam, Nabeel; Parker, Anna; King, Jonathan; Avalos, Claudia E.; Ajoy, Ashok; Wrachtrup, Joerg; Pines, Alexander; Meriles, Carlos A.

    2018-01-01

    One of the most remarkable properties of the nitrogen-vacancy (NV) center in diamond is that optical illumination initializes its electronic spin almost completely, a feature that can be exploited to polarize other spin species in their proximity. Here we use field-cycled nuclear magnetic resonance to investigate the mechanisms of spin-polarization transfer from NVs to 13C spins in diamond at room temperature. We focus on the dynamics near 51 mT, where a fortuitous combination of energy-matching conditions between electron and nuclear spin levels gives rise to alternative polarization transfer channels. By monitoring the 13C spin polarization as a function of the applied magnetic field, we show 13C spin pumping takes place via a multispin cross-relaxation process involving the N V- spin and the electronic and nuclear spins of neighboring P1 centers. Further, we find that this mechanism is insensitive to the crystal orientation relative to the magnetic field, although the absolute level of 13C polarization—reaching up to ˜3 % under optimal conditions—can vary substantially depending on the interplay between optical pumping efficiency, photogenerated carriers, and laser-induced heating.

  17. High-frequency dynamics of spin-polarized carriers and photons in a laser

    Science.gov (United States)

    Saha, D.; Basu, D.; Bhattacharya, P.

    2010-11-01

    The high-frequency dynamics of spin-polarized carriers and photons in a spin laser have been studied. The transient response of the device obtained from the rate equations is characterized by two sets of relaxation oscillations in the carrier and photon distributions corresponding to the two polarization modes. Consequently two distinct resonant peaks are observed in the small-signal modulation response. The calculated transient characteristics indicate that the best results are obtained from a spin laser when only the favored polarization mode, with lower threshold, is operational. Under this condition the small-signal modulation bandwidth is higher than that in a conventional laser, the threshold current is lower and the output polarization can be 100% with appropriate bias conditions, independent of the spin polarization of carriers in the active region. Measurements were made at 230 K on a InAs/GaAs quantum dot spin vertical cavity surface emitting laser. A time-averaged output polarization of 55% is measured with an active region spin polarization of 5-6% . The experimental results are in good agreement with calculated data.

  18. Measuring absolute spin polarization in dissolution-DNP by Spin PolarimetrY Magnetic Resonance (SPY-MR).

    Science.gov (United States)

    Vuichoud, Basile; Milani, Jonas; Chappuis, Quentin; Bornet, Aurélien; Bodenhausen, Geoffrey; Jannin, Sami

    2015-11-01

    Dynamic nuclear polarization at 1.2 K and 6.7 T allows one to achieve spin temperatures on the order of a few millikelvin, so that the high-temperature approximation (ΔEPolarimetrY Magnetic Resonance (SPY-MR), is illustrated for various pairs of (13)C spins (I, S) in acetate and pyruvate. Copyright © 2015 The Authors. Published by Elsevier Inc. All rights reserved.

  19. EDITORIAL: New materials with high spin polarization: half-metallic Heusler compounds

    Science.gov (United States)

    Felser, Claudia; Hillebrands, Burkard

    2007-03-01

    The development of magnetic Heusler compounds, specifically designed as materials for spintronic applications, has made tremendous progress in the very recent past [1-21]. Heusler compounds can be made as half-metals, showing a high spin polarization of the conduction electrons of up to 100% [1]. These materials are exceptionally well suited for applications in magnetic tunnel junctions acting, for example, as sensors for magnetic fields. The tunnelling magneto-resistance (TMR) effect is the relative change in the electrical resistance upon application of a small magnetic field. Tunnel junctions with a TMR effect of 580% at 4 K were reported by the group of Miyazaki and Ando [1], consisting of two Co2MnSi Heusler electrodes. High Curie temperatures were found in Co2 Heusler compounds with values up to 1120 K in Co2FeSi [2]. The latest results are for a TMR device made from the Co2FeAl0.5Si0.5 Heusler compound and working at room temperature with a TMR effect of 174% [3]. The first significant magneto-resistance effect was discovered in Co2Cr0.6Fe0.4Al (CCFA) in Mainz [4]. With the classical Heusler compound CCFA as one electrode, the record TMR effect at 4 K is 240% [5]. Positive and negative TMR values at room temperature utilizing magnetic tunnel junctions with one Heusler compound electrode render magnetic logic possible [6]. Research efforts exist, in particular, in Japan and in Germany. The status of research as of winter 2005 was compiled in a recent special volume of Journal of Physics D: Applied Physics [7-20]. Since then specific progress has been made on the issues of (i) new advanced Heusler materials, (ii) advanced characterization, and (iii) advanced devices using the new materials. In Germany, the Mainz and Kaiserslautern based Research Unit 559 `New Materials with High Spin Polarization', funded since 2004 by the Deutsche Forschungsgemeinschaft, is a basic science approach to Heusler compounds, and it addresses the first two topics in particular

  20. Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures

    KAUST Repository

    Morari, C.

    2017-11-20

    We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of the half-metallic NiMnSb in the scattering region, using density functional theory (DFT) methods. For a single NiMnSb unit the transmission function displays a spin polarization of around 50% in a window of 1eV centered around the Fermi level. By increasing the number of layers, an almost complete spin polarization of the transmission is obtained in this energy range. Supplementing the DFT calculations with local electronic interactions, of Hubbard-type on the Mn sites, leads to a hybridization between the interface and many-body states. The significant reduction of the spin polarization seen in the density of states is not apparent in the spin polarization of the conduction electron transmission, which suggests that the hybridized interface and many-body induced states are localized.

  1. Spin physics experiments at NICA-SPD with polarized proton and deuteron beams

    Energy Technology Data Exchange (ETDEWEB)

    Savin, I.; Efremov, A.; Pshekhonov, D.; Kovalenko, A.; Teryaev, O.; Shevchenko, O.; Nagajcev, A.; Guskov, A.; Kukhtin, V.; Toplilin, N. [JINR, Dubna (Russian Federation)

    2016-08-15

    This is a brief description of suggested measurements of asymmetries of the Drell-Yan (DY) pair production in collisions of non-polarized, longitudinally and transversally polarized protons and deuterons which provide an access to all leading-twist collinear and TMD PDFs of quarks and anti-quarks in nucleons. Other spin effects in hadronic and heavy-ion collisions may be also studied constituting the spin physics program at NICA. (orig.)

  2. Continuous wave protocol for simultaneous polarization and optical detection of P1-center electron spin resonance

    Science.gov (United States)

    Kamp, E. J.; Carvajal, B.; Samarth, N.

    2018-01-01

    The ready optical detection and manipulation of bright nitrogen vacancy center spins in diamond plays a key role in contemporary quantum information science and quantum metrology. Other optically dark defects such as substitutional nitrogen atoms (`P1 centers') could also become potentially useful in this context if they could be as easily optically detected and manipulated. We develop a relatively straightforward continuous wave protocol that takes advantage of the dipolar coupling between nitrogen vacancy and P1 centers in type 1b diamond to detect and polarize the dark P1 spins. By combining mutual spin flip transitions with radio frequency driving, we demonstrate the simultaneous optical polarization and detection of the electron spin resonance of the P1 center. This technique should be applicable to detecting and manipulating a broad range of dark spin populations that couple to the nitrogen vacancy center via dipolar fields, allowing for quantum metrology using these spin populations.

  3. Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

    Science.gov (United States)

    Li, Pengke; Appelbaum, Ian

    2018-03-01

    The combination of space inversion and time-reversal symmetries results in doubly degenerate Bloch states with opposite spin. Many lattices with these symmetries can be constructed by combining a noncentrosymmetric potential (lacking this degeneracy) with its inverted copy. Using simple models, we unravel the evolution of local spin splitting during this process of inversion symmetry restoration, in the presence of spin-orbit interaction and sublattice coupling. Importantly, through an analysis of quantum mechanical commutativity, we examine the difficulty of identifying states that are simultaneously spatially segregated and spin polarized. We also explain how surface-sensitive experimental probes (such as angle-resolved photoemission spectroscopy, or ARPES) of "hidden spin polarization" in layered materials are susceptible to unrelated spin splitting intrinsically induced by broken inversion symmetry at the surface.

  4. Spin polarization tuning in the graphene quantum dot by using in-plane external electric field

    International Nuclear Information System (INIS)

    Modarresi, M.; Roknabadi, M.R.; Shahtahmasebi, N.

    2014-01-01

    Electronic, magnetic and transport properties of a nano-graphene dot have been studied by using the DFT and tight binding methods. In the tight binding calculations, the interaction between electrons is modeled using the Hubbard Hamiltonian. By comparison between the eigen-values and density of states in the tight binding and DFT models, we tabulate a set of tight-binding parameters to describe graphene quantum dots for future works. The effects of a single vacancy and an in-plane external electric field on the spin-dependent transport of graphene quantum dot have been investigated. Transport through GQD between two GNR is studied by using Green's function formalism. Our results confirm an intrinsic spin-dependent current and relatively large spin polarization through the GQD in the presence of a single vacancy and zigzag edge. It is also shown that an in-plane external electric field controls the spin-polarization in graphene quantum dot. - Graphical abstract: We study the spin polarization in the presence of an external electric field. Highlights: • A tight binding study of transport through GNR/GQD/GNR is presented. • Our results show a relatively large spin polarization in the current–voltage curve. • Spin polarization is controlled by using an in-plane external electric field

  5. Effect of Rashba and Dresselhaus Spin-Orbit Couplings on Electron Spin Polarization in a Hybrid Magnetic-Electric Barrier Nanostructure

    Science.gov (United States)

    Yang, Shi-Peng; Lu, Mao-Wang; Huang, Xin-Hong; Tang, Qiang; Zhou, Yong-Long

    2017-04-01

    A theoretical study has been carried out on the spin-dependent electron transport in a hybrid magnetic-electric barrier nanostructure with both Rashba and Dresselhaus spin-orbit couplings, which can be experimentally realized by depositing a ferromagnetic strip and a Schottky metal strip on top of a semiconductor heterostructure. The spin-orbit coupling-dependent transmission coefficient, conductance, and spin polarization are calculated by solving the Schrödinger equation exactly with the help of the transfer-matrix method. We find that both the magnitude and sign of the electron spin polarization vary strongly with the spin-orbit coupling strength. Thus, the degree of electron spin polarization can be manipulated by properly adjusting the spin-orbit coupling strength, and such a nanosystem can be employed as a controllable spin filter for spintronics applications.

  6. Two-photon spin-polarization spectroscopy in silicon-doped GaAs.

    Science.gov (United States)

    Miah, M Idrish

    2009-05-14

    We generate spin-polarized electrons in bulk GaAs using circularly polarized two-photon pumping with excess photon energy (DeltaE) and detect them by probing the spin-dependent transmission of the sample. The spin polarization of conduction band electrons is measured and is found to be strongly dependent on DeltaE. The initial polarization, pumped with DeltaE=100 meV, at liquid helium temperature is estimated to be approximately 49.5%, which is very close to the theoretical value (50%) permitted by the optical selection rules governing transitions from heavy-hole and light-hole states to conduction band states in a bulk sample. However, the polarization pumped with larger DeltaE decreases rapidly because of the exciting carriers from the split-off band.

  7. Spin density measurement of water-bridged Co-dimer using polarized neutrons

    DEFF Research Database (Denmark)

    Damgaard-Møller, Emil; Overgaard, Jacob; Chilton, Nick

    present an experimentally determined spin density using polarized neutron diffraction in a simple water-bridged cobalt dimer [Co2(H2O)(piv)4(Hpiv)2(py)2] which is known to have a small ferromagnetic coupling between the spin centers. Visualizing the SDD could get us one step further in understanding...

  8. Spin-polarized transport in a δ-doped magnetic-barrier nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuai; Lu, Mao-Wang, E-mail: maowanglu@126.com; Jiang, Ya-Qing; Chen, Sai-Yan

    2014-09-05

    We theoretically investigate the electron spin transport properties through a δ-doped magnetic-barrier nanostructure, which can be realized experimentally by depositing two identical ferromagnetic stripes with the opposite in-plane magnetization on the top of a semiconductor heterostructure in parallel configuration and by using atomic layer doping technique. The δ-doping dependent transmission, conductance and spin polarization are calculated exactly by analytically solving Schrödinger equation of the spin electron. It is found that the electronic spin-polarized behavior in this device can be manipulated by changing the weight and/or the position of the δ-doping. Therefore, such a device can be used as a controllable spin filter, which may be helpful for spintronics applications. - Highlights: • Spin-polarized transport in a δ-doped magnetic-barrier nanostructure is explored. • Both magnitude and sign of spin polarization depend on the δ-doping. • A controllable spin filter can be achieved for spintronics applications.

  9. Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.-M.; Nitta, Junsaku; Jensen, Ane

    2001-01-01

    Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spi...

  10. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

    Science.gov (United States)

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-04-01

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

  11. New-type spin polarized electron source and its applications; Atarashii spin henkyoku denshi sengen to sono oyo

    Energy Technology Data Exchange (ETDEWEB)

    Saka, T.; Kato, T. [Daido Steel Co. Ltd., Nagoya (Japan); Nakanishi, T.; Okumi, S. [Nagoya University, Nagoya (Japan); Horinaka, H. [Osaka Prefectural University, Osaka (Japan). College of Engineering

    1998-08-20

    This paper reveals that using distorted thin GaAs film can realize high polarization in spin polarized electron ray, and introduces properties of the developed ray source. The paper also touches on the application thereof to property physics. Realization of the high spin polarization is based on use of the `optical polarization method`. With this method, electrons in specific spin state are excited into a conduction band by utilizing the selection law used when valency electrons of zincblende type crystal such as GaAs absorb circular polarization. These electrons are taken out into vacuum and used as polarized electron beams. In order to realize uniformly distorted GaAs film, a method was discussed, with which the thin GaAs films are grown on substrates with different lattice constants, and the films are distorted by means of lattice mismatch. GaAs(1-x)Px was used for the substrates. GaAs(1-x)Px has the lattice constant decrease as the P`s mixed crystal ratio `x` increases. If a thin GaAs film is grown on this substrate, it is possible to obtain GaAs which is subjected to compression stress in the direction parallel with the growing surface, and tensile stress in the vertical direction. 13 refs., 5 figs., 1 tab.

  12. High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts.

    Science.gov (United States)

    Dankert, André; Langouche, Lennart; Kamalakar, Mutta Venkata; Dash, Saroj Prasad

    2014-01-28

    Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS2-based spintronic devices.

  13. The Spin Structure of the Neutron Determined Using a Polarized He-3 Target

    Energy Technology Data Exchange (ETDEWEB)

    Middleton, H

    2004-01-06

    Described is a study of the internal spin structure of the neutron performed by measuring the asymmetry in spin-dependent deep inelastic scattering of polarized electrons from nuclear polarized {sup 3}He. Stanford Linear Accelerator experiment E142's sample of 400 million scattering events collected at beam energies between 19 and 26 GeV led to the most precise measurement of a nucleon spin structure function to date. The {sup 3}He target represents a major advance in polarized target technology, using the technique of spin exchange with optically pumped rubidium vapor to produce a typical {sup 3}He nuclear polarization of 34% in a 30cm long target cell with a gas density of 2.3 x 10{sup 20} cm{sup -3}. The target polarization was measured to {+-}7% using an Adiabatic Fast Passage NMR system calibrated with the thermal equilibrium polarization of the protons in a sample of water. The relatively high polarization and target thickness were the result of the development of large volume glass target cells which had inherent nuclear spin relaxation times for the {sup 3}He gas of as long as 70 hours. A target cell production procedure is presented which focuses on special glass blowing techniques to minimize surface interactions with the {sup 3}He nuclei and careful gas purification and vacuum system procedures to reduce relaxation inducing impurities.

  14. Towards 100% spin-polarized charge-injection : The half-metallic NiMnSb/CdS interface

    NARCIS (Netherlands)

    de Wijs, G.A.; de Groot, R A

    2001-01-01

    Spin-electronics requires an electron source with a spin-polarization as high as possible. For this, half-metallic materials seem ideally suited as they exhibit 100% spin polarization. Because of its high Curie temperature and compatibility with existing semiconductor technology, NiMnSb is a most

  15. Multiple acquisitions via sequential transfer of orphan spin polarization (MAeSTOSO): How far can we push residual spin polarization in solid-state NMR?

    Science.gov (United States)

    Gopinath, T; Veglia, Gianluigi

    2016-06-01

    Conventional multidimensional magic angle spinning (MAS) solid-state NMR (ssNMR) experiments detect the signal arising from the decay of a single coherence transfer pathway (FID), resulting in one spectrum per acquisition time. Recently, we introduced two new strategies, namely DUMAS (DUal acquisition Magic Angle Spinning) and MEIOSIS (Multiple ExperIments via Orphan SpIn operatorS), that enable the simultaneous acquisitions of multidimensional ssNMR experiments using multiple coherence transfer pathways. Here, we combined the main elements of DUMAS and MEIOSIS to harness both orphan spin operators and residual polarization and increase the number of simultaneous acquisitions. We show that it is possible to acquire up to eight two-dimensional experiments using four acquisition periods per each scan. This new suite of pulse sequences, called MAeSTOSO for Multiple Acquisitions via Sequential Transfer of Orphan Spin pOlarization, relies on residual polarization of both (13)C and (15)N pathways and combines low- and high-sensitivity experiments into a single pulse sequence using one receiver and commercial ssNMR probes. The acquisition of multiple experiments does not affect the sensitivity of the main experiment; rather it recovers the lost coherences that are discarded, resulting in a significant gain in experimental time. Both merits and limitations of this approach are discussed. Copyright © 2016 Elsevier Inc. All rights reserved.

  16. Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque.

    Science.gov (United States)

    Useinov, Arthur; Lin, Hsiu-Hau; Lai, Chih-Huang

    2017-08-21

    The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d av  tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (d av  ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer.

  17. Decoherence and mode hopping in a magnetic tunnel junction based spin torque oscillator.

    Science.gov (United States)

    Muduli, P K; Heinonen, O G; Akerman, Johan

    2012-05-18

    We discuss the coherence of magnetic oscillations in a magnetic tunnel junction based spin torque oscillator as a function of the external field angle. Time-frequency analysis shows mode hopping between distinct oscillator modes, which arises from linear and nonlinear couplings in the Landau-Lifshitz-Gilbert equation, analogous to mode hopping observed in semiconductor ring lasers. These couplings and, therefore, mode hopping are minimized near the current threshold for the antiparallel alignment of free-layer with reference layer magnetization. Away from the antiparallel alignment, mode hopping limits oscillator coherence.

  18. Interplay between magnetism and conductivity derived from spin-polarized donor radicals.

    Science.gov (United States)

    Sugawara, Tadashi; Komatsu, Hideji; Suzuki, Kentaro

    2011-06-01

    Tutorial review: to achieve molecule-based spintronic devices, an organic conducting magnet that exhibits both conductivity and magnetism in a cooperative manner must be constructed. As a building block for such new materials, a spin-polarized donor radical, which serves as a molecular "spin-filter" in its singly oxidized state, was designed and synthesized. The resistivity of ion radical salts of selenium-substituted, tetrathiafulvalene-based spin-polarized donor radicals decreased substantially in the presence of a magnetic field, thus indicating cooperative conductivity and magnetism.

  19. A high field optical-pumping spin-exchange polarized deuterium source

    International Nuclear Information System (INIS)

    Coulter, K.P.; Holt, R.J.; Kinney, E.R.; Kowalczyk, R.S.; Poelker, M.; Potterveld, D.H.; Young, L.; Zeidman, B.; Toporkov, D.

    1992-01-01

    Recent results from a prototype high field optical-pumping spin-exchange polarized deuterium source are presented. Atomic polarization as high as 62% have been observed with an intensity of 6.3 x 10 17 atoms-sec -1 and 65% dissociation fraction

  20. Dirac equation of spin particles and tunneling radiation from a Kinnersly black hole

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guo-Ping; Zu, Xiao-Tao [University of Electronic Science and Technology of China, School of Physical Electronics, Chengdu (China); Feng, Zhong-Wen [University of Electronic Science and Technology of China, School of Physical Electronics, Chengdu (China); China West Normal University, College of Physics and Space Science, Nanchong (China); Li, Hui-Ling [University of Electronic Science and Technology of China, School of Physical Electronics, Chengdu (China); Shenyang Normal University, College of Physics Science and Technology, Shenyang (China)

    2017-04-15

    In curved space-time, the Hamilton-Jacobi equation is a semi-classical particle equation of motion, which plays an important role in the research of black hole physics. In this paper, starting from the Dirac equation of spin 1/2 fermions and the Rarita-Schwinger equation of spin 3/2 fermions, respectively, we derive a Hamilton-Jacobi equation for the non-stationary spherically symmetric gravitational field background. Furthermore, the quantum tunneling of a charged spherically symmetric Kinnersly black hole is investigated by using the Hamilton-Jacobi equation. The result shows that the Hamilton-Jacobi equation is helpful to understand the thermodynamic properties and the radiation characteristics of a black hole. (orig.)

  1. Spin-resolved tunneling studies of the exchange field in EuS/Al bilayers.

    Science.gov (United States)

    Xiong, Y M; Stadler, S; Adams, P W; Catelani, G

    2011-06-17

    We use spin-resolved electron tunneling to study the exchange field in the Al component of EuS/Al bilayers, in both the superconducting and normal-state phases of the Al. Contrary to expectation, we show that the exchange field H(ex) is a nonlinear function of applied field, even in applied fields that are well beyond the EuS coercive field. Furthermore, the magnitude H(ex) is unaffected by the superconducting phase. In addition, H(ex) decreases significantly with increasing temperature in the temperature range of 0.1-1 K. We discuss these results in the context of recent theories of generalized spin-dependent boundary conditions at a superconductor-ferromagnet interface.

  2. Observation of the Distribution of Molecular Spin States by Resonant Quantum Tunneling of the Magnetization

    Science.gov (United States)

    Wernsdorfer, W.; Ohm, T.; Sangregorio, C.; Sessoli, R.; Mailly, D.; Paulsen, C.

    1999-05-01

    Below 360 mK, Fe8 magnetic molecular clusters are in the pure quantum relaxation regime and we show that the predicted ``square-root time'' relaxation is obeyed, allowing us to develop a new method for watching the evolution of the distribution of molecular spin states in the sample. We measure as a function of applied field H the statistical distribution P\\(ξH\\) of magnetic energy bias ξH acting on the molecules. Tunneling initially causes rapid transitions of molecules, thereby ``digging a hole'' in P\\(ξH\\) (around the resonant condition ξH = 0). For small initial magnetization values, the hole width shows an intrinsic broadening which may be due to nuclear spins.

  3. Progress in Scintillating Polarized Targets for Spin Physics

    Science.gov (United States)

    van den Brandt, B.; Hautle, P.; Konter, J. A.; Bunyatova, E. I.

    2003-06-01

    At PSI polarized scintillating targets have been operated in several particle physics experiments over extended periods of time. They proved to be very robust and reliable. Proton polarizations of more than 80%, and deuteron polarizations of 25% in fully deuterated polystyrene based scintillator have been reached in a vertical dilution refrigerator with optical access. New choices of materials and preparation procedures show potential for an improvement of the scintillation and polarization properties.

  4. A cryostat to hold frozen-spin polarized HD targets in CLAS: HDice-II

    International Nuclear Information System (INIS)

    The design, fabrication, operation, and performance of a 3/4 He dilution refrigerator and superconducting magnet system for holding a frozen-spin polarized hydrogen deuteride target in the Jefferson Laboratory CLAS detector during photon beam running is reported. The device operates both vertically (for target loading) and horizontally (for target bombardment). The device proves capable of maintaining a base temperature of 50 mK and a holding field of 1 T for extended periods. These characteristics enabled multi-month polarization lifetimes for frozen spin HD targets having proton polarization of up to 50% and deuteron up to 27%.

  5. A cryostat to hold frozen-spin polarized HD targets in CLAS: HDice-II

    Energy Technology Data Exchange (ETDEWEB)

    Lowry, M.M., E-mail: mlowry@jlab.org [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Bass, C.D. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); D' Angelo, A. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Universita' di Roma ‘Tor Vergata’, and INFN Sezione di Roma ‘Tor Vergata’, Via della Ricerca Scientifica, 1, I-00133 Roma (Italy); Deur, A.; Dezern, G. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Hanretty, C. [University of Virginia, 1400 University Avenue, Charlottesville, VA 22903 (United States); Ho, D. [Carnegie-Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213 (United States); Kageya, T.; Kashy, D. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Khandaker, M. [Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Laine, V. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Université Blaise Pascal, 34 Avenue Carnot, 63000 Clermont-Ferrand (France); O' Connell, T. [University of Connecticut, 115 N Eagleville Road, Storrs-Mansfield, CT 06269 (United States); Pastor, O. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Peng, P. [University of Virginia, 1400 University Avenue, Charlottesville, VA 22903 (United States); Sandorfi, A.M. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Sokhan, D. [Institut de Physique Nucleaire, Bat 100 – M053, Orsay 91406 (France); and others

    2016-04-11

    The design, fabrication, operation, and performance of a {sup 3/4}He dilution refrigerator and superconducting magnet system for holding a frozen-spin polarized hydrogen deuteride target in the Jefferson Laboratory CLAS detector during photon beam running is reported. The device operates both vertically (for target loading) and horizontally (for target bombardment). The device proves capable of maintaining a base temperature of 50 mK and a holding field of 1 T for extended periods. These characteristics enabled multi-month polarization lifetimes for frozen spin HD targets having proton polarization of up to 50% and deuteron up to 27%.

  6. Spin dependent fragmentation functions for heavy flavor baryons and single heavy hyperon polarization

    CERN Document Server

    Goldstein, G R

    2001-01-01

    Spin dependent fragmentation functions for heavy flavor quarks to fragment into heavy baryons are calculated in a quark-diquark model. The production of intermediate spin 1/2 and 3/2 excited states is explicity included. $\\Lambda_b$ , $\\Lambda_c$ and $\\Xi_c$ production rate and polarization at LEP energies are calculated and, where possible, compared with experiment. A different approach, also relying on a heavy quark-diquark model, is proposed for the small momentum transfer inclusive production of polarized heavy flavor hyperons. The predicted $\\Lambda_c$ polarization is roughly in agreement with experiment.

  7. Double-spin asymmetry of J/ψ production in polarized pp-collisions at HERA-N-vector polarized

    International Nuclear Information System (INIS)

    Teryaev, O.; Tkabladze, A.

    1996-01-01

    We calculated the color-octet contribution to the double spin asymmetry of J/ψ hadroproduction with nonzero transverse momenta at fixed target energies √ s ≅ 40 GeV. It is shown that color-octet contribution is dominant in the asymmetries. The expected asymmetries and statistical errors in a future option of HERA with longitudinally polarized protons at √ s = 39 GeV (HERA-N polarized) should allow one to distinguish between different parametrizations for polarized gluon distribution in proton

  8. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  9. Control of the spin polarization of photoelectrons/photoions using short laser pulses

    International Nuclear Information System (INIS)

    Nakajima, Takashi

    2004-01-01

    We present a generic pump-probe scheme to control spin polarization of photoelectrons/photoions by short laser pulses. By coherently exciting fine structure manifolds of a multi-valence-electron system by the pump laser, a superposition of fine structure states is created. Since each fine structure state can be further decomposed into a superposition of various spin states of valence electrons, each spin component evolves differently in time. This means that varying the time delay between the pump and probe lasers leads to the control of spin states. Specific theoretical results are presented for two-valence-electron atoms, in particular for Mg, which demonstrate that not only the degree of spin polarization but also its sign can be manipulated through time delay. Since the underline physics is rather general and transparent, the presented idea may be potentially applied to nanostructures such as quantum wells and quantum dots

  10. Neutral Silicon-Vacancy Center in Diamond: Spin Polarization and Lifetimes

    Science.gov (United States)

    Green, B. L.; Mottishaw, S.; Breeze, B. G.; Edmonds, A. M.; D'Haenens-Johansson, U. F. S.; Doherty, M. W.; Williams, S. D.; Twitchen, D. J.; Newton, M. E.

    2017-09-01

    We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV0 ), an S =1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T2>100 μ s at low-temperature, and a spin relaxation limit of T1>25 s . Optical spin-state initialization around 946 nm allows independent initialization of SiV0 and NV- within the same optically addressed volume, and SiV0 emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV0 is a promising candidate for a long-range quantum communication technology.

  11. New NASA-Ames wind-tunnel techniques for studying airplane spin and two-dimensional unsteady aerodynamics

    Science.gov (United States)

    Malcolm, G. N.; Davis, S. S.

    1978-01-01

    Two new wind tunnel test apparatuses were developed at NASA-Ames Research Center. The first is a rotary-balance apparatus to be used in the Ames 12-Foot Pressure Tunnel for investigating the effects of Reynolds number, spin rate, and angle of attack on the aerodynamics of fighter and general aviation aircraft in a steady spin motion. The second apparatus provides capability for oscillating a large two dimensional wing (0.5 m chord, 1.35 m span) instrumented with steady and unsteady pressure transducers in the Ames 11 x 11 ft. Transonic Wind Tunnel. A complete description of both apparatuses, their capabilities, and some typical wind tunnel results are presented.

  12. Observation of radiative spin-polarization at 60.6 GeV

    CERN Document Server

    Assmann, R W; Hildreth, M D; Matheson, J; Mugnai, G; Placidi, Massimo; Roncarolo, F; Torrence, E; Sonnemann, F; Uythoven, J; Wenninger, J; Blondel, A

    1999-01-01

    Radiative spin-polarization has been used extensively at LEP to accurately measure the beam energy around the Z resonance. As the LEP physics has moved on to the W boson the calibration based on polarization must be extended towards higher beam energies. This is difficult as the depolarizing effects of spin resonances grow rapidly with beam energy. At LEP it has been possible for the first time to measure transverse beam polarization at 60.6 GeV. To allow a build-up of polarization the tunes and the energy were chosen accurately. A low phase advance optics was used and careful orbit correction was carried out using dynamic beam based alignment data. Harmonic spin matching was applied both in a deterministic and a novel semi- empirical way. (11 refs).

  13. Polarized 3He Neutron Spin Filters at Oak Ridge National Laboratory

    Science.gov (United States)

    Jiang, C. Y.; Tong, X.; Brown, D. R.; Lee, W. T.; Ambaye, H.; Craig, J. W.; Crow, L.; Culbertson, H.; Goyette, R.; Graves-Brook, M. K.; Hagen, M. E.; Kadron, B.; Lauter, V.; McCollum, L. W.; Robertson, J. L.; Winn, B.; Vandegrift, A. E.

    The unique advantages of using polarized 3He as neutron spin filters, such as broadband and wide angular acceptance of neutron beams, have made it widely used in most neutron facilities. Over the last several years, we have developed a polarized 3He program to meet the increasing needs of 3He based neutron spin filters at the Oak Ridge National Laboratory's (ORNL) High Flux Isotope Reactor (HFIR) and Spallation Neutron Source (SNS). At ORNL, polarized 3He is produced using Spin Exchange Optical Pumping (SEOP). We have constructed a 3He cell fabrication station to produce 3He cells of different pressures and dimensions. Two optical pumping stations have been built in the lab to perform ex situ pumping of 3He. A compact in situ3He analyzer has been constructed and installed for the Magnetism Reflectometer (MAGICS) at SNS. A novel polarized 3He filling station for the Hybrid Spectrometer (HYSPEC) at SNS is under development.

  14. A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

    Directory of Open Access Journals (Sweden)

    Ting Xie

    2017-12-01

    Full Text Available A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry technique is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.

  15. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

  16. Laser detection of spin-polarized hydrogen from HCl and HBr photodissociation: comparison of H- and halogen-atom polarizations.

    Science.gov (United States)

    Sofikitis, Dimitris; Rubio-Lago, Luis; Bougas, Lykourgos; Alexander, Andrew J; Rakitzis, T Peter

    2008-10-14

    Thermal HCl and HBr molecules were photodissociated using circularly polarized 193 nm light, and the speed-dependent spin polarization of the H-atom photofragments was measured using polarized fluorescence at 121.6 nm. Both polarization components, described by the a(0)(1)(perpendicular) and Re[a(1)(1)(parallel, perpendicular)] parameters which arise from incoherent and coherent dissociation mechanisms, are measured. The values of the a(0)(1)(perpendicular) parameter, for both HCl and HBr photodissociation, are within experimental error of the predictions of both ab initio calculations and of previous measurements of the polarization of the halide cofragments. The experimental and ab initio theoretical values of the Re[a(1)(1)(parallel, perpendicular)] parameter show some disagreement, suggesting that further theoretical investigations are required. Overall, good agreement occurs despite the fact that the current experiments photodissociate molecules at 295 K, whereas previous measurements were conducted at rotational temperatures of about 15 K.

  17. Tunneling conductance oscillations in spin-orbit coupled metal-insulator-superconductor junctions

    Science.gov (United States)

    Kapri, Priyadarshini; Basu, Saurabh

    2018-01-01

    The tunneling conductance for a device consisting of a metal-insulator-superconductor (MIS) junction is studied in presence of Rashba spin-orbit coupling (RSOC) via an extended Blonder-Tinkham-Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.

  18. Correlated calculations of indirect nuclear spin-spin coupling constants using second-order polarization propagator approximations: SOPPA and SOPPA(CCSD)

    DEFF Research Database (Denmark)

    Enevoldsen, Thomas; Oddershede, Jens; Sauer, Stephan P. A.

    1998-01-01

    We present correlated calculations of the indirect nuclear spin-spin coupling constants of HD, HF, H2O, CH4, C2H2, BH, AlH, CO and N2 at the level of the second-order polarization propagator approximation (SOPPA) and the second-order polarization propagator approximation with coupled-cluster sing...

  19. Improved Superlattices for Spin-Polarized Electron Sources

    Energy Technology Data Exchange (ETDEWEB)

    Mamaev, Yu.A.; Gerchikov, L.G.; Yashin, Yu.P.; Kuz-michev, V.; Vasiliev, D.; /St. Petersburg Polytechnic Inst.; Maruymama, T.; Clendenin, J.E.; /SLAC; Ustinov, V.M.; Zhukov, A.E.; /Ioffe Phys. Tech. Inst.

    2006-12-08

    Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra makes it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum efficiency of QE = 0.5% are close to the best results obtained for photocathodes that are based on strained semiconductor superlattices.

  20. Polar-core spin vortex of quasi-2D ferromagnetic spin-1 condensate in a flat-bottomed optical trap with a weak magnetic field

    Science.gov (United States)

    Zheng, Gong-Ping; Li, Pin; Li, Ting; Xue, Ya-Jie

    2018-02-01

    Motivated by the recent experiments realized in a flat-bottomed optical trap (Navon et al., 2015; Chomaz et al., 2015), we study the ground state of polar-core spin vortex of quasi-2D ferromagnetic spin-1 condensate in a finite-size homogeneous trap with a weak magnetic field. The exact spatial distribution of local spin is obtained with a variational method. Unlike the fully-magnetized planar spin texture with a zero-spin core, which was schematically demonstrated in previous studies for the ideal polar-core spin vortex in a homogeneous trap with infinitely large boundary, some plateaus and two-cores structure emerge in the distribution curves of spin magnitude in the polar-core spin vortex we obtained for the larger effective spin-dependent interaction. More importantly, the spin values of the plateaus are not 1 as expected in the fully-magnetized spin texture, except for the sufficiently large spin-dependent interaction and the weak-magnetic-field limit. We attribute the decrease of spin value to the effect of finite size of the system. The spin values of the plateaus can be controlled by the quadratic Zeeman energy q of the weak magnetic field, which decreases with the increase of q.

  1. Temperature dependence of electron spin-lattice relaxation of radiation-produced silver atoms in polycrystalline aqueous and glassy organic matrices. Importance of relaxation by tunneling modes in disordered matrices

    International Nuclear Information System (INIS)

    Michalik, J.; Kevan, L.

    1978-01-01

    The electron spin-lattice relaxation of trapped silver atoms in polycrystalline ice matrices and in methanol, ethanol, propylene carbonate, and 2-methyltetrahydrofuran organic glasses has been directly studied as a function of temperature by the saturation-recovery method. Below 40 K the dominant electron spin-lattice relaxation mechanism involves modulation of the electron nuclear dipolar interaction with nuclei in the radical's environment by tunneling of those nuclei between two nearly equal energy configurations. This relaxation mechanism occurs with high efficiency, has a characteristic linear temperature dependence, and is typically found in highly disordered matrices. The efficiency of this relaxation mechanism seems to decrease with decreasing polarity of the matrix. Deuteration experiments show that the tunneling nuclei are protons and in methanol it is shown that the methyl protons have more tunneling modes available than the hydroxyl protons. In polycrystalline ice matrices silver atoms can be stabilized with two different orientations of surrounding water molecules; the efficiency of the tunneling relaxation reflects this difference. From these and previous results on tunneling relaxation of trapped electrons in glassy matrices it appears that tunneling relaxation may be used to distinguish models with different geometrical configurations and to determine the relative rigidity of such configurations around trapped radicals in disordered solids. (author)

  2. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  3. Manifestation of spin selection rules on the quantum tunneling of magnetization in a single-molecule magnet.

    Science.gov (United States)

    Henderson, J J; Koo, C; Feng, P L; del Barco, E; Hill, S; Tupitsyn, I S; Stamp, P C E; Hendrickson, D N

    2009-07-03

    We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at high temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three. This is dictated by the C3 molecular symmetry, which forbids pure tunneling from the lowest metastable state. Transverse field resonances are understood by correctly orienting the Jahn-Teller axes of the individual manganese ions and including transverse dipolar fields. These factors are likely to be important for QTM in all single-molecule magnets.

  4. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    The spin of electrons in semiconductors strongly couple with electric and magnetic fields due to ... where ckμ and d−kμ are annihilation operators for electron with momentum k and spin μ and hole with momentum −k ... kμ and ekμ are annihilation and creation operators for impurity electrons. Qkμ and Qkμ are the coefficient ...

  5. Measurement of proton and nitrogen polarization in ammonia and a test of equal spin temperature

    CERN Document Server

    Adeva, B; Arvidson, A; Badelek, B; Baum, G; Berglund, P; Betev, L; De Botton, N R; Bradamante, Franco; Bradtke, C; Bravar, A; Bültmann, S; Crabb, D; Cranshaw, J; Çuhadar-Dönszelmann, T; Dalla Torre, S; Van Dantzig, R; Derro, B R; Dreshpande, A; Dhawan, S K; Dulya, C M; Dutz, H; Eichblatt, S; Fasching, D; Feinstein, F; Fernández, C; Forthmann, S; Frois, Bernard; Gallas, A; Garzón, J A; Gehring, R; Gilly, H; Giorgi, M A; Görtz, S; Gracia, G; De Groot, N; Grosse-Perdekamp, M; Haft, K; Harmsen, J; Von Harrach, D; Hasegawa, T; Hautle, P; Hayashi, N; Heusch, C A; Horikawa, N; Hughes, V W; Igo, G; Ishimoto, S; Iwata, T; Kabuss, E M; Kageya, T; Karev, A G; Ketel, T; Kiryluk, J; Kiselev, Yu F; Kok, E; Krämer, Dietrich; Kröger, W; Kurek, K; Kyynäräinen, J; Lamanna, M; Landgraf, U; Le Goff, J M; Lehár, F; de Lesquen, A; Lichtenstadt, J; Litmaath, M; Magnon, A; Mallot, G K; Martin, A; Matsuda, T; Mayes, B W; McCarthy, J S; Medved, K S; Meyer, W T; Van Middelkoop, G; Miller, D; Miyachi, Y; Mori, K; Nassalski, J P; Niinikoski, T O; Oberski, J; Ogawa, A; Parks, D P; Pereira da Costa, H D; Perrot-Kunne, F; Peshekhonov, V D; Pinsky, L; Platchkov, S K; Pló, M; Plückthun, M; Polec, J; Pose, D; Postma, H; Pretz, J; Puntaferro, R; Rädel, G; Reicherz, G; Rijllart, A; Rodríguez, M; Rondio, Ewa; Sandacz, A; Savin, I A; Schiavon, R P; Schiller, A; Sichtermann, E P; Simeoni, F; Smirnov, G I; Staude, A; Steinmetz, A; Stiegler, U; Stuhrmann, H B; Tessarotto, F; Tlaczala, W; Tripet, A; Ünel, G; Velasco, M; Vogt, J; Voss, Rüdiger; Whitten, C; Windmolders, R; Wislicki, W; Witzmann, A; Ylöstalo, J; Zanetti, A M; Zaremba, K

    1998-01-01

    The 1996 data taking of the SMC experiment used polarized protons to measure the spin dependent structure function $g_1$ of the proton. Three liters of solid granular ammonia were irradiated at the Bonn electron linac in order to create the paramagnetic radicals which are needed for polarizing the protons. Proton polarizations of $\\pm(90\\pm2.5)\\,\\%$ were routinely reached. An analysis based on a theoretical line-shape for spin-1 systems with large quadrupolar broadening was developed which allowed the nitrogen polarization in the ammonia to be determined with a 10\\,\\% relative error. The measured quadrupolar coupling constant of $^{14}$N agrees well with earlier extrapolated values. The polarization of the nitrogen nuclei was measured as a function of the proton polarization in order to provide a test of the equal spin temperature (EST) hypothesis. It was found to be closely valid under the dynamic nuclear polarization conditions with which the protons are polarized. Large deviations from EST could be induced...

  6. Construction and characterization of a spin polarized helium ion beam for surface electronic structure studies

    International Nuclear Information System (INIS)

    Harrison, A.R.

    1982-01-01

    Ion neutralization and metastable de-excitation spectroscopy, INS and MDS, allow detailed analysis of the surface electronic configuration of metals. The orthodox application of these spectroscopies may be enhanced by electronic spin polarization of the probe beams. For this reason, a spin polarized helium ion beam has been constructed. The electronic spin of helium metastables created within an rf discharge may be spacially aligned by optically pumping the atoms. Subsequent collisions between metastables produce helium ions which retain the orientation of the electronic spin. Extracted ion polarization, although not directly measurable, may be estimated from extracted electron polarization, metastable polarization, pumping radiation absorption and current modulation measurements. Ions extracted from the optically pumped discharge exhibit an estimated polarization of about ten per cent at a beam current of a few tenths of a microampere. Extraction of helium ions from the discharge requires that the ions have a high kinetic energy. However, to avoid undesirable kinetic electron ejection from the target surface, the ions must be decelerated. Examination of various deceleration configurations, in paticular exponential and linear deceleration fields, and experimental observation indicate that a linear decelerating field produces the best low energy beam to the target surface

  7. Quantum Tunneling of Magnetization in Single Molecular Magnets Coupled to Ferromagnetic Reservoirs

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization (QTM). The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction with tunneling electrons is shown to affect the spin reversal due to QTM. ...

  8. Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

    Directory of Open Access Journals (Sweden)

    Yaser Hajati

    2016-02-01

    Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

  9. Spin polarization and magnetic dichroism in core-level photoemission from ferromagnets

    Energy Technology Data Exchange (ETDEWEB)

    Menchero, Jose Gabriel [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-05-01

    In this thesis we present a theoretical investigation of angle- and spin-resolved core-level photoemission from ferromagnetic Fe and Ni. We also consider magneto-dichroic effects due to reversal of the photon helicity or reversal of the sample magnetization direction. In chapter 1, we provide a brief outline of the history of photoemission, and show how it has played an important role in the development of modern physics. We then review the basic elements of the theory of core-level photoemission, and discuss the validity of the some of the commonly-used approximations. In chapter 2, we present a one-electron theory to calculate spin- and angle-resolved photoemission spectra for an arbitrary photon polarization. The Hamiltonian includes both spin-orbit and exchange interactions. As test cases for the theory, we calculate the spin polarization and magnetic dichroism for the Fe 2p core level, and find that agreement with experiment is very good.

  10. Spin temperatures under dynamic polarization in a one-dimensional system, the TANOL

    International Nuclear Information System (INIS)

    Barjhoux, Yves.

    1974-01-01

    A quantitative model of Tanol submitted to dynamic polarization has been developed. The spin systems are described using a network of interconnected reservoirs. The model involves six (or ten) Zeeman nuclear reservoirs mutually coupled by nuclear-nuclear dipole interactions and coupled to electron spins by hyperfine interactions. When the electronic line is saturated, different nuclear temperatures appear in the molecule. These temperatures have been calculated as a function of the magnetic field orientation against the crystallographic axes. Experimental results are correctly reproduced. A quantitative agreement is obtained for the anisotropy of total polarization. The calculation also shows that, in certain directions, positive and negative spin temperatures simultaneously appear, that explains the complex shape of the signals observed. Nuclear relaxation processes involving two electron spins of the same exchange chain are taken into account for the calculation. The different possible chain directions (a, a+c, or c vectors) were envisaged. Only the c-vector hypothesis succeeded in interpreting experimental results [fr

  11. Spin Tracking of Polarized Protons in the Main Injector at Fermilab

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, M. [Fermilab; Lorenzon, W. [Michigan U.; Aldred, C. [Michigan U.

    2016-07-01

    The Main Injector (MI) at Fermilab currently produces high-intensity beams of protons at energies of 120 GeV for a variety of physics experiments. Acceleration of polarized protons in the MI would provide opportunities for a rich spin physics program at Fermilab. To achieve polarized proton beams in the Fermilab accelerator complex, shown in Fig.1.1, detailed spin tracking simulations with realistic parameters based on the existing facility are required. This report presents studies at the MI using a single 4-twist Si-berian snake to determine the depolarizing spin resonances for the relevant synchrotrons. Results will be presented first for a perfect MI lattice, followed by a lattice that includes the real MI imperfections, such as the measured magnet field errors and quadrupole misalignments. The tolerances of each of these factors in maintaining polariza-tion in the Main Injector will be discussed.

  12. Creating intense polarized electron beam via laser stripping and spin-orbit interaction

    International Nuclear Information System (INIS)

    Danilov, V.; Ptitsyn, V.; Gorlov, T.

    2010-01-01

    The recent advance in laser field make it possible to excite and strip electrons with definite spin from hydrogen atoms. The sources of hydrogen atoms with orders of magnitude higher currents (than that of the conventional polarized electron cathods) can be obtained from H - sources with good monochromatization. With one electron of H - stripped by a laser, the remained electron is excited to upper state (2P 3/2 and 2P 1/2 ) by a circular polarization laser light from FEL. Then, it is excited to a high quantum number (n=7) with mostly one spin direction due to energy level split of the states with a definite direction of spin and angular momentum in an applied magnetic field and then it is stripped by a strong electric field of an RF cavity. This paper presents combination of lasers and fields to get high polarization and high current electron source.

  13. Spin polarization versus color–flavor locking in high-density quark matter

    DEFF Research Database (Denmark)

    Tsue, Yasuhiko; da Providência, João; Providência, Constança

    2015-01-01

    It is shown that spin polarization with respect to each flavor in three-flavor quark matter occurs instead of color–flavor locking at high baryon density by using the Nambu–Jona-Lasinio model with four-point tensor-type interaction. Also, it is indicated that the order of phase transition between...... the color–flavor-locked phase and the spin-polarized phase is the first order by means of second-order perturbation theory.......It is shown that spin polarization with respect to each flavor in three-flavor quark matter occurs instead of color–flavor locking at high baryon density by using the Nambu–Jona-Lasinio model with four-point tensor-type interaction. Also, it is indicated that the order of phase transition between...

  14. Low temperature polarized target for spin structure studies of nucleons at COMPASS

    CERN Document Server

    Pesek, Michael

    In presented thesis we describe concept of Deep Inelastic Scattering of leptons on nucleons in context of nucleon spin structure studies. Both polarized and unpolarized cases are discussed and concept of Transverse Momentum Dependent Parton Distribution Functions (TMD PDF) is introduced. The possibility of TMDs measurement using Semi-inclusive DIS (SIDIS) is described along with related results from COMPASS experiment. The future Drell-Yan programme at COMPASS is briefly mentioned and its importance is presented on the universality test i.e. change of sign of T-odd TMDs when measured in Drell-Yan and SIDIS. The importance of Polarized Target (PT) for spin structure studies is highlighted and principles of Dynamic Nuclear Polarization (DNP) are given using both Solid effect and spin temperature concept. COMPASS experiment is described in many details with accent given to PT. Finally the thermal equilibrium (TE) calibration procedure is described and carried out for 2010 and 2011 physics runs at COMPASS. The av...

  15. Internal Spin Structure of the Nucleon in Polarized Deep Inelastic Muon-Nucleon Scattering

    International Nuclear Information System (INIS)

    Wislicki, W.

    1998-01-01

    We present the study of the internal spin structure of the nucleon in spin-dependent deep inelastic scattering of muons on nucleons. The data were taken by the NA47 experiment of the Spin Muon Collaboration (SMC) on the high energy muon beam at CERN. The experiment used the polarized proton and deuteron targets. The structure function g 1 p (x) and g 1 d (x) were determined from the asymmetries of the spin-dependent event rates in the range of 0.003 2 >=10 GeV 2 . Using the first moments of these structure functions an agreement with the Bjorken sum rule prediction was found within one standard deviation. The first moments of g 1 (x), for both proton and deuteron, are smaller than the Ellis-Jaffe sum rule prediction. This disagreement can be interpreted in terms of negative polarization of the strange sea in the nucleon. The singlet part of the axial current matrix element can be interpreted as an overall spin carried by quarks in the nucleon. Its value is significantly smaller than nucleon spin. Semi-inclusive asymmetries of yields of positive and negative hadrons produced on both targets were also measured and analysed in term of quark-parton model, together with inclusive asymmetries. From this analysis the quark spin distributions were determined, separately for valence u and d quarks and for non-strange sea quarks. Valence u quarks are positively polarized and their polarization increases with x. Valence d quarks are negatively polarized and their polarization does not exhibit any x-dependence. The non-strange sea is unpolarized in the whole measured range of x. The first moments of the valance quark spin distributions were found consistent with the values obtained from weak decay constants F and D and their second moments are consistent with lattice QCD calculations. In the QCD analysis of the world data the first moment of the gluon spin distribution was found with a large error. Also, a search for a non-perturbative anomaly at high x was done on the world

  16. Instantaneous coherent destruction of tunneling and fast quantum state preparation for strongly pulsed spin qubits in diamond

    DEFF Research Database (Denmark)

    Wubs, Martijn

    2010-01-01

    Qubits driven by resonant strong pulses are studied and a parameter regime is explored in which the dynamics can be solved in closed form. Instantaneous coherent destruction of tunneling can be seen for longer pulses, whereas shorter pulses allow a fast preparation of the qubit state. Results...... are compared with recent experiments of pulsed nitrogen-vacancy center spin qubits in diamond....

  17. Intradot spin-flip Andreev reflection tunneling through a ferromagnet-quantum dot-superconductor system with ac field

    International Nuclear Information System (INIS)

    Song Hongyan; Zhou Shiping

    2008-01-01

    We investigate Andreev reflection (AR) tunneling through a ferromagnet-quantum dot-superconductor (F-QD-S) system in the presence of an external ac field. The intradot spin-flip scattering in the QD is involved. Using the nonequilibrium Green function and BCS quasiparticle spectrum for superconductor, time-averaged AR conductance is formulated. The competition between the intradot spin-flip scattering and photon-assisted tunneling dominates the resonant behaviors of the time-averaged AR conductance. For weak intradot spin-flip scattering strengths, the AR conductance shows a series of equal interval resonant levels. However, the single-peak at main resonant level develops into a well-resolved double-peak resonance at a strong intradot spin-flip scattering strength. Remarkable, multiple-photon-assisted tunneling that generates photonic sideband peaks with a variable interval has been found. In addition, the AR conductance-bias voltage characteristic shows a transition between the single-peak to double-peak resonance as the ratio of the two tunneling strengths varies

  18. Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

    Science.gov (United States)

    Manca, M.; Wang, G.; Kuroda, T.; Shree, S.; Balocchi, A.; Renucci, P.; Marie, X.; Durnev, M. V.; Glazov, M. M.; Sakoda, K.; Mano, T.; Amand, T.; Urbaszek, B.

    2018-04-01

    In III-V semiconductor nano-structures, the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics are widely studied, but little is known about the initialization mechanisms. Here, we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X+ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage Vg. Variation of ΔVg on the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 μeV (-22%) to +10 μeV (+7%) although the X+ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X+ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X+ lifetime which is on the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.

  19. Observation of the spin-polarized surface state in a noncentrosymmetric superconductor BiPd.

    Science.gov (United States)

    Neupane, Madhab; Alidoust, Nasser; Hosen, M Mofazzel; Zhu, Jian-Xin; Dimitri, Klauss; Xu, Su-Yang; Dhakal, Nagendra; Sankar, Raman; Belopolski, Ilya; Sanchez, Daniel S; Chang, Tay-Rong; Jeng, Horng-Tay; Miyamoto, Koji; Okuda, Taichi; Lin, Hsin; Bansil, Arun; Kaczorowski, Dariusz; Chou, Fangcheng; Hasan, M Zahid; Durakiewicz, Tomasz

    2016-11-07

    Recently, noncentrosymmetric superconductor BiPd has attracted considerable research interest due to the possibility of hosting topological superconductivity. Here we report a systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES study of the normal state electronic and spin properties of BiPd. Our experimental results show the presence of a surface state at higher-binding energy with the location of Dirac point at around 700 meV below the Fermi level. The detailed photon energy, temperature-dependent and spin-resolved ARPES measurements complemented by our first-principles calculations demonstrate the existence of the spin-polarized surface states at high-binding energy. The absence of such spin-polarized surface states near the Fermi level negates the possibility of a topological superconducting behaviour on the surface. Our direct experimental observation of spin-polarized surface states in BiPd provides critical information that will guide the future search for topological superconductivity in noncentrosymmetric materials.

  20. Hardness and softness reactivity kernels within the spin-polarized density-functional theory

    International Nuclear Information System (INIS)

    Chamorro, Eduardo; De Proft, Frank; Geerlings, Paul

    2005-01-01

    Generalized hardness and softness reactivity kernels are defined within a spin-polarized density-functional theory (SP-DFT) conceptual framework. These quantities constitute the basis for the global, local (i.e., r-position dependent), and nonlocal (i.e., r and r ' -position dependents) indices devoted to the treatment of both charge-transfer and spin-polarization processes in such a reactivity framework. The exact relationships between these descriptors within a SP-DFT framework are derived and the implications for chemical reactivity in such context are outlined

  1. Construction of the spin-polarized slow positron beam with the RI source

    Energy Technology Data Exchange (ETDEWEB)

    Nakajyo, Terunobu; Tashiro, Mutsumi; Kanazawa, Ikuzo [Tokyo Gakugei Univ., Koganei (Japan); Komori, Fumio; Murata, Yoshimasa; Ito, Yasuo

    1997-03-01

    The electrostatic slow-positron beam is constructed by using {sup 22}Na source. We design the electrostatic lens, the system of the detector, and the Wien filter for the experiment`s system of the spin-polarized slow positron beam. The reemitted spin-polarized slow-positron spectroscopy is proposed for studying magnetic thin films and magnetic multilayers. We calculated the depolarized positron fractions in the Fe thin film Fe(10nm)/Cu(substrate) and the multilayers Cu(1nm)/Fe(10nm)/Cu(substrate). (author)

  2. Dynamic nuclear polarization of membrane proteins: covalently bound spin-labels at protein–protein interfaces

    International Nuclear Information System (INIS)

    Wylie, Benjamin J.; Dzikovski, Boris G.; Pawsey, Shane; Caporini, Marc; Rosay, Melanie; Freed, Jack H.; McDermott, Ann E.

    2015-01-01

    We demonstrate that dynamic nuclear polarization of membrane proteins in lipid bilayers may be achieved using a novel polarizing agent: pairs of spin labels covalently bound to a protein of interest interacting at an intermolecular interaction surface. For gramicidin A, nitroxide tags attached to the N-terminal intermolecular interface region become proximal only when bimolecular channels forms in the membrane. We obtained signal enhancements of sixfold for the dimeric protein. The enhancement effect was comparable to that of a doubly tagged sample of gramicidin C, with intramolecular spin pairs. This approach could be a powerful and selective means for signal enhancement in membrane proteins, and for recognizing intermolecular interfaces

  3. Spin asymmetry in muon-proton deep inelastic scattering on a transversely-polarized target

    CERN Document Server

    Adams, D.; Arik, E.; Arvidson, A.; Badelek, B.; Ballintijn, M.K.; Bardin, G.; Baum, Guenter; Berglund, P.; Betev, L.; Bird, I.G.; Birsa, R.; Bjorkholm, P.; Bonner, B.E.; de Botton, N.; Bradamante, F.; Bressan, A.; Brull, A.; Bueltmann, Stephen L.; Burtin, E.; Cavata, C.; Clocchiatti, M.; Corcoran, M.D.; Crabb, D.; Cranshaw, J.; Crawford, M.; Cuhadar, T.; Dalla Torre, S.; van Dantzig, R.; Dhawan, S.; Dulya, C.; Dyring, A.; Eichblatt, S.; Faivre, J.C.; Fasching, D.; Feinstein, F.; Fernandez, C.; Frois, B.; Garzon, J.A.; Gaussiran, T.; Giorgi, M.; von Goeler, E.; Gracia, G.; de Groot, N.; Grosse Perdekamp, M.; Gulmez, Erhan; von Harrach, D.; Hasegawa, T.; Hautle, P.; Hayashi, N.; Heusch, C.A.; Horikawa, N.; Hughes, V.W.; Igo, G.; Ishimoto, S.; Iwata, T.; Kabuss, E.M.; Kaiser, R.; Karev, A.; Kessler, H.J.; Ketel, T.J.; Kishi, A.; Kiselev, Yu.; Klostermann, L.; Kramer, D.; Krivokhijine, V.; Kukhtin, V.; Kyynarainen, J.; Lamanna, M.; Landgraf, U.; Lau, K.; Layda, T.; Le Goff, J.M.; Lehar, F.; de Lesquen, A.; Lichtenstadt, J.; Lindqvist, T.; Litmaath, M.; Lopez-Ponte, S.; Lowe, M.; Magnon, A.; Mallot, G.K.; Marie, F.; Martin, A.; Martino, J.; Matsuda, T.; Mayes, B.; McCarthy, J.S.; Medved, K.; van Middelkoop, G.; Miller, D.; Mori, K.; Moromisato, J.; Nagaitsev, A.; Nassalski, J.; Naumann, L.; Niinikoski, T.O.; Oberski, J.E.J.; Parks, D.P.; Penzo, A.; Perez, G.; Kunne, F.; Peshekhonov, D.; Piegaia, R.; Pinsky, Lawrence S.; Platchkov, S.; Plo, M.; Pose, D.; Postma, H.; Pretz, J.; Pussieux, T.; Pyrlik, J.; Reyhancan, I.; Rieubland, J.M.; Rijllart, A.; Roberts, J.B.; Rock, S.; Rodriguez, M.; Rondio, E.; Rosado, A.; Sabo, I.; Saborido, J.; Sandacz, A.; Savin, Igor A.; Schiavon, P.; Schuler, P.; Segel, R.; Seitz, R.; Semertzidis, Y.; Sever, F.; Shanahan, P.; Shumeiko, N.; Smirnov, G.; Staude, A.; Steinmetz, A.; Stiegler, U.; Stuhrmann, H.; Teichert, K.M.; Tessarotto, F.; Velasco, M.; Vogt, J.; Voss, R.; Weinstein, R.; Whitten, C.; Windmolders, R.; Willumeit, R.; Wislicki, W.; Witzmann, A.; Zanetti, A.M.; Zhao, J.

    1994-01-01

    We measured the spin asymmetry in the scattering of 100 GeV longitudinally-polarized muons on transversely polarized protons. The asymmetry was found to be compatible with zero in the kinematic range $0.006spin structure function $g_2$. For $x<0.15$, $A_2$ is significantly smaller than its positivity limit $\\sqrt{R}$.

  4. The Spin Pulse of the Intermediate Polar V1062 Tauri

    Science.gov (United States)

    Hellier, Coel; Beardmore, A. P.; Mukai, Koji; White, Nicholas E. (Technical Monitor)

    2002-01-01

    We combine ASCA and RXTE data of V1062 Tau to confirm the presence of a 62-min X-ray pulsation. We show that the pulsation is caused largely by the variation of dense partial absorption, in keeping with current models of accretion onto magnetic white dwarfs. Further parameterisation of the spin pulse is, however, hampered by ambiguities in the models.

  5. Spin-polarized deuterium : stabilization in magnetic traps

    NARCIS (Netherlands)

    Koelman, J.M.V.A.; Stoof, H.T.C.; Verhaar, B.J.; Walraven, J.T.M.

    1987-01-01

    We report on a calculation of the spin-exchange two-body rate constants associated with the population dynamics of the hyperfine levels of atomic deuterium as a function of magnetic field in the Boltzmann zero temperature limit. We find that a gas of low field seeking deuterium atoms trapped in a

  6. Spin polarized auger electron spectroscopy (SPAES): An element specific local magnetization probe of magnetic materials

    Science.gov (United States)

    Anilturk, Onder S.

    Spin Polarized Auger Electron Spectroscopy (SPAES) is found to have application for investigating fundamental properties as well as element specific local magnetization information on magnetic materials. By using the uniqueness of the UTA-SEMPA tool, one can obtain the surface magnetic domain microstructure and also perform SPAES studies by probing a single domain at the surface. In the current study, knowing the probed domain, spin polarization of electrons from super Coster-Kronig MVV Auger emissions on 3%Si-Fe sheets have been investigated. It is observed that on both sides of 180° domains, separated by a domain wall with an out-of-plane component of magnetization, the spin polarized Auger spectra exhibit similar distributions with high polarization structures, which are consistent with the published data. The element specificity of the system is applied to Gd-Co composite system. Details of 4d core hole initiated Auger transitions showed that the 5d states have enhanced spin polarization, confirming the coupling of moments in the composite system via 5d states of Gd. It is also unambiguously observed that Co magnetic moments are indeed aligned antiparallel to the Gd ones via 4f-5d positive exchange and 3d-5d hybridization.

  7. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

    2015-05-11

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

  8. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    International Nuclear Information System (INIS)

    Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

    2015-01-01

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

  9. Measurements of double-polarized compton scattering asymmetries and extraction of the proton spin polarizabilities.

    Science.gov (United States)

    Martel, P P; Miskimen, R; Aguar-Bartolome, P; Ahrens, J; Akondi, C S; Annand, J R M; Arends, H J; Barnes, W; Beck, R; Bernstein, A; Borisov, N; Braghieri, A; Briscoe, W J; Cherepnya, S; Collicott, C; Costanza, S; Denig, A; Dieterle, M; Downie, E J; Fil'kov, L V; Garni, S; Glazier, D I; Gradl, W; Gurevich, G; Hall Barrientos, P; Hamilton, D; Hornidge, D; Howdle, D; Huber, G M; Jude, T C; Kaeser, A; Kashevarov, V L; Keshelashvili, I; Kondratiev, R; Korolija, M; Krusche, B; Lazarev, A; Lisin, V; Livingston, K; MacGregor, I J D; Mancell, J; Manley, D M; Meyer, W; Middleton, D G; Mushkarenkov, A; Nefkens, B M K; Neganov, A; Nikolaev, A; Oberle, M; Ortega Spina, H; Ostrick, M; Ott, P; Otte, P B; Oussena, B; Pedroni, P; Polonski, A; Polyansky, V; Prakhov, S; Rajabi, A; Reicherz, G; Rostomyan, T; Sarty, A; Schrauf, S; Schumann, S; Sikora, M H; Starostin, A; Steffen, O; Strakovsky, I I; Strub, T; Supek, I; Thiel, M; Tiator, L; Thomas, A; Unverzagt, M; Usov, Y; Watts, D P; Witthauer, L; Werthmüller, D; Wolfes, M

    2015-03-20

    The spin polarizabilities of the nucleon describe how the spin of the nucleon responds to an incident polarized photon. The most model-independent way to extract the nucleon spin polarizabilities is through polarized Compton scattering. Double-polarized Compton scattering asymmetries on the proton were measured in the Δ(1232) region using circularly polarized incident photons and a transversely polarized proton target at the Mainz Microtron. Fits to asymmetry data were performed using a dispersion model calculation and a baryon chiral perturbation theory calculation, and a separation of all four proton spin polarizabilities in the multipole basis was achieved. The analysis based on a dispersion model calculation yields γ(E1E1)=-3.5±1.2, γ(M1M1)=3.16±0.85, γ(E1M2)=-0.7±1.2, and γ(M1E2)=1.99±0.29, in units of 10(-4)  fm(4).

  10. Spin polarized solid target as a prospective tool for radioactive ion beam physics

    Science.gov (United States)

    Urrego-Blanco, J. P.; van den Brandt, B.; Bunyatova, E. I.; Galindo-Uribarri, A.; Hautle, P.; Konter, J. A.

    2005-12-01

    Spin polarized probes are used in a wide range of experiments in nuclear physics including the determination of spin structure functions and tests of fundamental symmetries. At low energies, light stable polarized beams have been used for spectroscopic purposes. We propose to extend these types of experiments to nuclei far from stability by using radioactive ion beams (RIBs) and polarized targets. Towards this goal we intend to develop a solid polarized proton and/or deuterium target in the thickness range between 20 μm and 100 μm based on a scintillating (active) polymeric foil. Such a target would be a useful tool in the determination of excitation functions in resonant reactions, in studies of one-nucleon transfer reactions using RIBs as well as in probing the matter density of atomic nuclei. If scintillating, it could also help remove the background associated with the scattering of the radioactive beam.

  11. Spin polarized solid target as a prospective tool for radioactive ion beam physics

    Energy Technology Data Exchange (ETDEWEB)

    Urrego-Blanco, J.P. [Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996 (United States); Physics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6371 (United States); Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Brandt, B. van den [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Bunyatova, E.I. [Joint Institute for Nuclear Research, Dubna, Head P.O. Box 79, 101000 Moscow (Russian Federation); Galindo-Uribarri, A. [Physics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6371 (United States)]. E-mail: uribarri@mail.phy.ornl.gov; Hautle, P. [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Konter, J.A. [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland)

    2005-12-15

    Spin polarized probes are used in a wide range of experiments in nuclear physics including the determination of spin structure functions and tests of fundamental symmetries. At low energies, light stable polarized beams have been used for spectroscopic purposes. We propose to extend these types of experiments to nuclei far from stability by using radioactive ion beams (RIBs) and polarized targets. Towards this goal we intend to develop a solid polarized proton and/or deuterium target in the thickness range between 20 {mu}m and 100 {mu}m based on a scintillating (active) polymeric foil. Such a target would be a useful tool in the determination of excitation functions in resonant reactions, in studies of one-nucleon transfer reactions using RIBs as well as in probing the matter density of atomic nuclei. If scintillating, it could also help remove the background associated with the scattering of the radioactive beam.

  12. Recent advancements of wide-angle polarization analysis with 3He neutron spin filters

    International Nuclear Information System (INIS)

    Chen, W.C.; Gentile, T.R.; Ye, Q.; Kirchhoff, A.; Watson, S.M.; Rodriguez-Rivera, J.A.; Qiu, Y.; Broholm, C.

    2016-01-01

    Wide-angle polarization analysis with polarized 3 He based neutron spin filters (NSFs) has recently been employed on the Multi-Axis Crystal Spectrometer (MACS) at the National Institute of Standards and Technology Center for Neutron Research (NCNR). Over the past several years, the apparatus has undergone many upgrades to address the fundamental requirements for wide angle polarization analysis using spin exchange optical pumping based 3 He NSFs. In this paper, we report substantial improvements in the on-beam-line performance of the apparatus and progress toward routine user capability. We discuss new standard samples used for 3 He NSF characterization and the flipping ratio measurement on MACS. We further discuss the management of stray magnetic fields produced by operation of superconducting magnets on the MACS instrument, which can significantly reduce the 3 He polarization relaxation time. Finally, we present the results of recent development of horseshoe-shaped wide angle cells. (paper)

  13. Light-free magnetic resonance force microscopy for studies of electron spin polarized systems

    International Nuclear Information System (INIS)

    Pelekhov, Denis V.; Selcu, Camelia; Banerjee, Palash; Chung Fong, Kin; Chris Hammel, P.; Bhaskaran, Harish; Schwab, Keith

    2005-01-01

    Magnetic resonance force microscopy is a scanned probe technique capable of three-dimensional magnetic resonance imaging. Its excellent sensitivity opens the possibility for magnetic resonance studies of spin accumulation resulting from the injection of spin polarized currents into a para-magnetic collector. The method is based on mechanical detection of magnetic resonance which requires low noise detection of cantilever displacement; so far, this has been accomplished using optical interferometry. This is undesirable for experiments on doped silicon, where the presence of light is known to enhance spin relaxation rates. We report a non-optical displacement detection scheme based on sensitive microwave capacitive readout

  14. Theory of magnetic-field-induced polarization flop in spin-spiral multiferroics

    Science.gov (United States)

    Mochizuki, Masahito

    2015-12-01

    The magnetic-field-induced 90∘ flop of ferroelectric polarization P in a spin-spiral multiferroic material TbMnO3 is theoretically studied based on a microscopic spin model. I find that the direction of the P flop or the choice of +Pa or -Pa after the flop is governed by magnetic torques produced by the applied magnetic field H acting on the Mn spins and thus is selected in a deterministic way, in contradistinction to the naively anticipated probabilistic flop. This mechanism resolves a puzzle of the previously reported memory effect in the P direction depending on the history of the magnetic-field sweep, and enables controlled switching of multiferroic domains by externally applied magnetic fields. My Monte-Carlo analysis also uncovers that the magnetic structure in the P ∥a phase under H ∥b is not a previously anticipated simple a b -plane spin cycloid but a conical spin structure.

  15. A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

    Science.gov (United States)

    Lee, Seungyeon; Lee, Hyunjoo; Kim, Sojeong; Lee, Seungjun; Shin, Hyungsoon

    2010-04-01

    Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.

  16. Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

    Directory of Open Access Journals (Sweden)

    Hamidreza Emamipour

    2013-01-01

    Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

  17. Magnetization tunneling in high-symmetry single-molecule magnets: Limitations of the giant spin approximation

    Science.gov (United States)

    Wilson, A.; Lawrence, J.; Yang, E.-C.; Nakano, M.; Hendrickson, D. N.; Hill, S.

    2006-10-01

    Electron paramagnetic resonance (EPR) studies of a Ni4 single-molecule magnet (SMM) yield the zero-field-splitting (ZFS) parameters D , B40 , and B44 , based on the giant spin approximation (GSA) with S=4 ; B44 is responsible for the magnetization tunneling in this SMM. Experiments on an isostructural Ni-doped Zn4 crystal establish the NiII ion ZFS parameters. The fourth-order ZFS parameters in the GSA arise from the interplay between the Heisenberg interaction Jŝ1•ŝ2 and the second-order single-ion anisotropy, giving rise to mixing of higher-lying S≠4 states into the S=4 state. Consequently, J directly influences the ZFS in the ground state, enabling its determination by EPR.

  18. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

    International Nuclear Information System (INIS)

    Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.

    2014-01-01

    The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

  19. Shunted interference and discontinuous instantons in spin tunneling in Fe8 molecules.

    Science.gov (United States)

    Kececioglu, Ersin; Garg, Anupam

    2003-03-01

    The now well-known observation of topological quenching of spin tunneling in the magnetic molecule Fe8 [W. Wernsdorfer and R. Sessoli, Science 284, 133 (1999)] contains another effect that has gone unnoticed. The geometrical phase predicts ten quenching fields, but only four quenches are actually seen. We show that a very weak fourth-order anisotropy that is need to quantitatively fit the spacing between the remaining quenching fields also explains the missing quenches. This term is a singular perturbation that generates new instantons with discontinuities at the end points. One of these new instantons has the least action beyond the fourth quenching field, and since it does not have an interfering partner, it shunts the quenching effect beyond that field. We also derive a closed form formula for the spacing that fits the data extremely well. [Phys. Rev. Lett. 88, 23705, 2002].

  20. Magnetic adatoms in two and four terminal graphene nanoribbons: A comparison between their spin polarized transport

    Science.gov (United States)

    Ganguly, Sudin; Basu, Saurabh

    2018-04-01

    We study the charge and spin transport in two and four terminal graphene nanoribbons (GNR) decorated with random distribution of magnetic adatoms. The inclusion of the magnetic adatoms generates only the z-component of the spin polarized conductance via an exchange bias in the absence of Rashba spin-orbit interaction (SOI), while in presence of Rashba SOI, one is able to create all the three (x, y and z) components. This has important consequences for possible spintronic applications. The charge conductance shows interesting behaviour near the zero of the Fermi energy. Where in presence of magnetic adatoms the familiar plateau at 2e2 / h vanishes, thereby transforming a quantum spin Hall insulating phase to an ordinary insulator. The local charge current and the local spin current provide an intuitive idea on the conductance features of the system. We found that, the local charge current is independent of Rashba SOI, while the three components of the local spin currents are sensitive to Rashba SOI. Moreover the fluctuations of the spin polarized conductance are found to be useful quantities as they show specific trends, that is, they enhance with increasing adatom densities. A two terminal GNR device seems to be better suited for possible spintronic applications.

  1. Brillouin zone spin filtering mechanism of enhanced tunneling magnetoresistance and correlation effects in a Co(0001 )/h -BN/Co(0001 ) magnetic tunnel junction

    Science.gov (United States)

    Faleev, Sergey V.; Parkin, Stuart S. P.; Mryasov, Oleg N.

    2015-12-01

    The Brillouin zone spin filtering mechanism of enhanced tunneling magnetoresistance (TMR) is described for magnetic tunnel junctions (MTJs) and studied for an example of the MTJ with hcp Co electrodes and hexagonal BN (h -BN) spacer. Our calculations based on the local density approximation of density-functional theory (LDA-DFT) for Co(0001 )/h -BN/Co(0001 ) MTJ predict high TMR in this device due to Brillouin zone filtering mechanism. Owning to the specific complex band structure of the h -BN the spin-dependent tunneling conductance of the system is ultrasensitive to small variations of the Fermi energy position inside the BN band gap. Doping of the BN and, consequentially, changing the Fermi energy position could lead to variation of the TMR by several orders of magnitude. We show also that taking into account correlation effects on beyond DFT level is required to accurately describe position of the Fermi level and thus transport properties of the system. Our study suggests that new MTJ based on hcp Co-Pt or Co-Pd disordered alloy electrodes and p -doped hexagonal BN spacer is a promising candidate for the spin-transfer torque magnetoresistive random-access memory.

  2. Berry phase and shot noise for spin-polarized and entangled electrons

    International Nuclear Information System (INIS)

    Wang Pei; Tang Weihua; Lu Dinghui; Jiang Lixia; Zhao Xuean

    2007-01-01

    Shot noise for entangled and spin-polarized states in a four-probe geometric setup has been studied by adding two rotating magnetic fields in an incoming channel. Our results show that the noise power oscillates as the magnetic fields vary. The singlet, entangled triplet and polarized states can be distinguished by adjusting the magnetic fields. The Berry phase can be derived by measuring the shot noise power

  3. The effects of Rashba spin-orbit coupling on spin-polarized transport in hexagonal graphene nano-rings and flakes

    Science.gov (United States)

    Laghaei, M.; Heidari Semiromi, E.

    2018-03-01

    Quantum transport properties and spin polarization in hexagonal graphene nanostructures with zigzag edges and different sizes were investigated in the presence of Rashba spin-orbit interaction (RSOI). The nanostructure was considered as a channel to which two semi-infinite armchair graphene nanoribbons were coupled as input and output leads. Spin transmission and spin polarization in x, y, and z directions were calculated through applying Landauer-Buttiker formalism with tight binding model and the Green's function to the system. In these quantum structures it is shown that changing the size of system, induce and control the spin polarized currents. In short, these graphene systems are typical candidates for electrical spintronic devices as spin filtering.

  4. Tuning Fermi level of Cr{sub 2}CoZ (Z=Al and Si) inverse Heusler alloys via Fe-doping for maximum spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mukhtiyar [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Saini, Hardev S. [Department of Physics, Panjab University, Chandigarh-160014 (India); Thakur, Jyoti [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Reshak, Ali H. [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Kashyap, Manish K., E-mail: manishdft@gmail.com [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India)

    2014-12-15

    We report full potential treatment of electronic and magnetic properties of Cr{sub 2−x}Fe{sub x}CoZ (Z=Al, Si) Heusler alloys where x=0.0, 0.25, 0.5, 0.75 and 1.0, based on density functional theory (DFT). Both parent alloys (Cr{sub 2}CoAl and Cr{sub 2}CoSi) are not half-metallic frromagnets. The gradual replacement of one Cr sublattice with Fe induces the half-metallicity in these systems, resulting maximum spin polarization. The half-metallicity starts to appear in Cr{sub 2−x}Fe{sub x}CoAl and Cr{sub 2−x}Fe{sub x}CoSi with x=0.50 and x=0.25, respectively, and the values of minority-spin gap and half-metallic gap or spin-flip gap increase with further increase of x. These gaps are found to be maximum for x=1.0 for both cases. An excellent agreement between the structural properties of CoFeCrAl with available experimental study is obtained. The Fermi level tuning by Fe-doping makes these alloys highly spin polarized and thus these can be used as promising candidates for spin valves and magnetic tunnelling junction applications. - Highlights: • Tuning of E{sub F} in Cr{sub 2}CoZ (Z=Al, Si) has been demonstrated via Fe doping. • Effect of Fe doping on half-metallicity and magnetism have been discussed. • The new alloys have a potential of being used as spin polarized electrodes.

  5. Chiral-like tunneling of electrons in two-dimensional semiconductors with Rashba spin-orbit coupling.

    Science.gov (United States)

    Ang, Yee Sin; Ma, Zhongshui; Zhang, C

    2014-01-21

    The unusual tunneling effects of massless chiral fermions (mCF) and massive chiral fermions (MCF) in a single layer graphene and bilayer graphene represent some of the most bizarre quantum transport phenomena in condensed matter system. Here we show that in a two-dimensional semiconductor with Rashba spin-orbit coupling (R2DEG), the real-spin chiral-like tunneling of electrons at normal incidence simultaneously exhibits features of mCF and MCF. The parabolic branch of opposite spin in R2DEG crosses at a Dirac-like point and has a band turning point. These features generate transport properties not found in usual two-dimensional electron gas. Albeit its π Berry phase, electron backscattering is present in R2DEG. An electron mimics mCF if its energy is in the vicinity of the subband crossing point or it mimics MCF if its energy is near the subband minima.

  6. Impact of spin-zero particle-photon interactions on light polarization in external magnetic fields

    International Nuclear Information System (INIS)

    Liao Yi

    2007-01-01

    If the recent PVLAS results on polarization changes of a linearly polarized laser beam passing through a magnetic field are interpreted by an axion-like particle, it is almost certain that it is not a standard QCD axion. Considering this, we study the general effective interactions of photons with spin-zero particles without restricting the latter to be a pseudo-scalar or a scalar, i.e., a parity eigenstate. At the lowest order in effective field theory, there are two dimension-5 interactions, each of which has previously been treated separately for a pseudo-scalar or a scalar particle. By following the evolution in an external magnetic field of the system of spin-zero particles and photons, we compute the changes in light polarization and the transition probability for two experimental set-ups: one-way propagation and round-trip propagation. While the first may be relevant for astrophysical sources of spin-zero particles, the second applies to laboratory optical experiments like PVLAS. In the one-way propagation, interesting phenomena can occur for special configurations of polarization where, for instance, transition occurs but light polarization does not change. For the round-trip propagation, however, the standard results of polarization changes for a pseudoscalar or a scalar are only modified by a factor that depends on the relative strength of the two interactions

  7. Quenched spin tunneling and diabolical points in magnetic molecules. I. Symmetric configurations

    Science.gov (United States)

    Garg, Anupam

    2001-09-01

    The perfect quenching of spin tunneling that has previously been discussed in terms of interfering instantons, and has recently been observed in the magnetic molecule Fe8, is treated using a discrete phase integral (or Wentzel-Kramers-Brillouin) method. The simplest model Hamiltonian for the phenomenon leads to a Schrödinger equation that is a five-term recursion relation. This recursion relation is reflection symmetric when the magnetic field applied to the molecule is along the hard magnetic axis. A completely general Herring formula for the tunnel splittings for all reflection-symmetric five-term recursion relations is obtained. Using connection formulas for a nonclassical turning point that may be described as lying ``under the barrier,'' and which underlies the oscillations in the splitting as a function of magnetic field, this Herring formula is transformed into two other formulas that express the splittings in terms of a small number of action and actionlike integrals. These latter formulas appear to be generally valid, even for problems where the recursion contains more than five terms. The results for the model Hamiltonian are compared with experiment, numerics, previous instanton based approaches, and the limiting case of no magnetic field.

  8. Quenched spin tunneling and diabolical points in magnetic molecules. II. Asymmetric configurations

    Science.gov (United States)

    Garg, Anupam

    2001-09-01

    The perfect quenching of spin tunneling first predicted for a model with biaxial symmetry, and recently observed in the magnetic molecule Fe8, is further studied using the discrete phase integral or WKB (Wentzel-Kramers-Brillouin) method. The analysis of the previous paper is extended to the case where the magnetic field has both hard and easy components, so that the Hamiltonian has no obvious symmetry. Herring's formula is now inapplicable, so the problem is solved by finding the wave function and using connection formulas at every turning point. A general formula for the energy surface in the vicinity of the diabolo is obtained in this way. This formula gives the tunneling amplitude between two wells unrelated by symmetry in terms of a small number of action integrals, and appears to be generally valid, even for problems where the recursion contains more than five terms. Explicit results are obtained for the diabolical points in the model for Fe8 that closely parallel the experimental observations. The leading semiclassical results for the diabolical points are found to agree precisely with exact results.

  9. NMR investigations of surfaces and interfaces using spin-polarized xenon

    Energy Technology Data Exchange (ETDEWEB)

    Gaede, Holly Caroline [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry

    1995-07-01

    129Xe NMR is potentially useful for the investigation of material surfaces, but has been limited to high surface area samples in which sufficient xenon can be loaded to achieve acceptable signal to noise ratios. In Chapter 2 conventional 129Xe NMR is used to study a high surface area polymer, a catalyst, and a confined liquid crystal to determine the topology of these systems. Further information about the spatial proximity of different sites of the catalyst and liquid crystal systems is determined through two dimensional exchange NMR in Chapter 3. Lower surface area systems may be investigated with spin-polarized xenon, which may be achieved through optical pumping and spin exchange. Optically polarized xenon can be up to 105times more sensitive than thermally polarized xenon. In Chapter 4 highly polarized xenon is used to examine the surface of poly(acrylonitrile) and the formation of xenon clathrate hydrates. An attractive use of polarized xenon is as a magnetization source in cross polarization experiments. Cross polarization from adsorbed polarized xenon may allow detection of surface nuclei with drastic enhancements. A non-selective low field thermal mixing technique is used to enhance the 13C signal of CO2 of xenon occluded in solid CO2 by a factor of 200. High-field cross polarization from xenon to proton on the surface of high surface area polymers has enabled signal enhancements of ~1,000. These studies, together with investigations of the efficiency of the cross polarization process from polarized xenon, are discussed in Chapter 5. Another use of polarized xenon is as an imaging contrast agent in systems that are not compatible with traditional contrast agents. The resolution attainable with this method is determined through images of structured phantoms in Chapter 6.

  10. PREFACE: Spin Electronics

    Science.gov (United States)

    Dieny, B.; Sousa, R.; Prejbeanu, L.

    2007-04-01

    Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

  11. Nuclear spin Hall and Klein tunneling effects during oxidation with electric and magnetic field inductions in graphene.

    Science.gov (United States)

    Little, Reginald B; McClary, Felicia; Rice, Bria; Jackman, Corine; Mitchell, James W

    2012-12-14

    The recent observation of the explosive oxidation of graphene with enhancement for decreasing temperature and the requirements for synchronizing oxidants for collective oxidation-reduction (redox) reactions presented a chemical scenario for the thermal harvesting by the magnetic spin Hall Effect. More experimental data are presented to demonstrate such spin Hall Effect by determining the influence of spins of so-called spectator fermionic cations. Furthermore, the so-called spectator bosonic cations are discovered to cause a Klein tunneling effect during the redox reaction of graphene. The Na(+) and K(+), fermionic cations and the Mg(2+) and Ca(2+), bosonic cations were observed and compared under a variety of experimental conditions: adiabatic reactions with initial temperatures (18-22 °C); reactions toward infinite dilution; isothermal reactions under nonadiabatic conditions at low temperature of 18 °C; reactions under paramagnetic O(2) or diamagnetic N(2) atmospheres of different permeabilities; reactions in applied and no applied external magnetic field; and reactions toward excess concentrations of common and uncommon Na(+) and Mg(2+) cations. The observed reaction kinetics and dynamics under these various, diverse conditions are consistent with the spin Hall mechanism, energy harvesting and short time violation of Second Law of Thermodynamics for redox reactions of graphene by the Na(+)K(+) mixture and are consistent with the Klein tunnel mechanism for the redox reactions of graphene by the Mg(2+)Ca(2+) mixture. Mixed spin Hall and Klein tunnel mechanisms are discovered to slow and modulate explosive redox reactions. Such spin Hall Effect also gives explanation of recent tunneling of electrons through boron nitride.

  12. A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Hyein Lim

    2013-01-01

    Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

  13. Effect of the anisotropy of the electron g-factor in spin polarization

    International Nuclear Information System (INIS)

    Miah, M. Idrish; Gray, E. MacA.

    2010-01-01

    Spin polarization in the presence of an external magnetic field and electric bias in quantum confined semiconductor structures has been studied by time- and polarization-resolved spectrometry. From measurements with angular variations of the magnetic field from the Voigt configuration (VC) it was found that both the frequency (Ω) and decay rate (β) of the oscillatory component of the polarization increase with variation of the angle from the VC. Their dependences are discussed based on the electron spin dephasing related to the spread of the electron g-factor (g e ) (i.e. unequal values of the longitudinal (g e|| ) and transverse (g e -perpendicular) components of g e ) and the exchange interaction between the electron and hole spins. It is demonstrated that the increase in Ω upon deviation of the magnetic field from the VC relates to the anisotropy of g e (g e|| and g e -perpendicular) resulting from the quantum confinement effect. However, the angular dependence on β is related to the residual exchange interaction between the electron spin and rapidly relaxing hole spin.

  14. Effect of the anisotropy of the electron g-factor in spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong 4331 (Bangladesh); Gray, E. MacA. [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2010-02-15

    Spin polarization in the presence of an external magnetic field and electric bias in quantum confined semiconductor structures has been studied by time- and polarization-resolved spectrometry. From measurements with angular variations of the magnetic field from the Voigt configuration (VC) it was found that both the frequency ({Omega}) and decay rate ({beta}) of the oscillatory component of the polarization increase with variation of the angle from the VC. Their dependences are discussed based on the electron spin dephasing related to the spread of the electron g-factor (g{sub e}) (i.e. unequal values of the longitudinal (g{sub e||}) and transverse (g{sub e}-perpendicular) components of g{sub e}) and the exchange interaction between the electron and hole spins. It is demonstrated that the increase in {Omega} upon deviation of the magnetic field from the VC relates to the anisotropy of g{sub e} (g{sub e||} and g{sub e}-perpendicular) resulting from the quantum confinement effect. However, the angular dependence on {beta} is related to the residual exchange interaction between the electron spin and rapidly relaxing hole spin.

  15. Prospects for a deuterium internal target, tensor polarized by optical pumping: spin exchange

    International Nuclear Information System (INIS)

    Green, M.C.

    1984-01-01

    The prospects for a tensor polarized deuterium target (approx. 10 15 atoms/cm 2 ) appropriate for nuclear physics studies in medium and high energy particle storage rings are discussed. Using the technique of electron spin exchange with an optically pumped sodium (or potassium) vapor, we hope to polarize deuterium at a rate approx. 10 17 atoms/sec. Predictions for the deuterium polarization for a particular target cell design will be presented leading to the identification of the required optical pumping power and cell wall depolarization probability to attain optimum performance. The technical obstacles to be surmounted in such a target design will also be discussed

  16. Spin polarization in top pair production in association with two photons at NLO+PS

    CERN Document Server

    Luisoni, Gionata

    2017-01-01

    This talk focuses on the impact of top-quark spin polarization effects in Higgs boson production in association with a top-quark pair, where the Higgs boson decays to two photons. Predictions for the signal are compared with direct top-quark pair production in association with two photons at NLO+PS.

  17. Spin-polarized versus chiral condensate in quark matter at finite temperature and density

    DEFF Research Database (Denmark)

    Matsuoka, Hiroaki; Tsue, Yasuhiko; da Providencia, Joao

    2016-01-01

    It is shown that the spin-polarized condensate appears in quark matter at high baryon density and low temperature due to the tensor-type four-point interaction in the Nambu-Jona-Lasiniotype model as a low-energy effective theory of quantum chromodynamics. It is indicated within this low...

  18. Polarization measurement of atomic hydrogen beam spin-exchanged with optically oriented sodium atoms

    International Nuclear Information System (INIS)

    Ueno, Akira; Ogura, Kouichi; Wakuta, Yoshihisa; Kumabe, Isao

    1988-01-01

    The spin-exchange reaction between hydrogen atoms and optically oriented sodium atoms was used to produce a polarized atomic hydrogen beam. The electron-spin polarization of the atomic hydrogen beam, which underwent the spin-exchange reaction with the optically oriented sodium atoms, was measured. A beam polarization of -(8.0±0.6)% was obtained when the thickness and polarization of the sodium target were (5.78±0.23)x10 13 atoms/cm 2 and -(39.6±1.6)%, respectively. The value of the spin-exchange cross section in the forward scattering direction, whose scattering angle in the laboratory system was less than 1.0 0 , was obtained from the experimental results as Δσ ex =(3.39±0.34)x10 -15 cm 2 . This value is almost seven times larger than the theoretical value calculated from the Na-H potential. The potential was computed quantum mechanically in the space of the appropriate wave functions of the hydrogen and the sodium atoms. (orig./HSI)

  19. Large Spin-Valley Polarization in Monolayer MoTe2 on Top of EuO(111)

    KAUST Repository

    Zhang, Qingyun

    2015-12-08

    The electronic properties of monolayer MoTe2 on top of EuO(111) are studied by first-principles calculations. Strong spin polarization is induced in MoTe2, which results in a large valley polarization. In a longitudinal electric field this will result in a valley and spin-polarized charge Hall effect. The direction of the Hall current as well as the valley and spin polarizations can be tuned by an external magnetic field. Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Theory of current-induced spin polarization in an electron gas

    Science.gov (United States)

    Gorini, Cosimo; Maleki Sheikhabadi, Amin; Shen, Ka; Tokatly, Ilya V.; Vignale, Giovanni; Raimondi, Roberto

    2017-05-01

    We derive the Bloch equations for the spin dynamics of a two-dimensional electron gas in the presence of spin-orbit coupling. For the latter we consider both the intrinsic mechanisms of structure inversion asymmetry (Rashba) and bulk inversion asymmetry (Dresselhaus), and the extrinsic ones arising from the scattering from impurities. The derivation is based on the SU(2) gauge-field formulation of the Rashba-Dresselhaus spin-orbit coupling. Our main result is the identification of a spin-generation torque arising from Elliot-Yafet scattering, which opposes a similar term arising from Dyakonov-Perel relaxation. Such a torque, which to the best of our knowledge has gone unnoticed so far, is of basic nature, i.e., should be effective whenever Elliott-Yafet processes are present in a system with intrinsic spin-orbit coupling, irrespective of further specific details. The spin-generation torque contributes to the current-induced spin polarization (CISP), also known as inverse spin-galvanic or Edelstein effect. As a result, the behavior of the CISP turns out to be more complex than one would surmise from consideration of the internal Rashba-Dresselhaus fields alone. In particular, the symmetry of the current-induced spin polarization does not necessarily coincide with that of the internal Rashba-Dresselhaus field, and an out-of-plane component of the CISP is generally predicted, as observed in recent experiments. We also discuss the extension to the three-dimensional electron gas, which may be relevant for the interpretation of experiments in thin films.

  1. New directions in the theory of spin-polarized atomic hydrogen and deuterium

    International Nuclear Information System (INIS)

    Koelman, J.M.V.A.

    1988-01-01

    The three chapters of this thesis dealing with collisions between hydrogen (or deuterium) atoms in their ground state, each treat a different development in the theory of atomic hydrogen or deuterium gas. The decay due to interatomic collisions hindered till now all attempts to reach the low temperature, high-density regime where effects due to degeneracy are expected to show up. In ch. 2 a simple way out is presented for the case of Fermi gases: In spin-polarized Fermi systems at very low temperatures collisions are much effective than in Bose systems. For the Fermi gas, consisting of magnetically confined deuterium atoms, it appears that fast spin-exchange collisions automatically lead to a completely spin-polarized gas for which the spin-relaxation limited lifetime increases dramatically with decreasing temperature. As also the ratio of internal thermalization rate over decay rate increases with decreasing temperature, this gas can be cooled by forced evaporation down to very low temperatures. In ch. 3 it iis shown that the nuclear spin dynamics due to the hyperfine interaction during collisions, strongly limits the improvement in frequency stability attainable by H masers operating at low temperatures. In ch. 4 the phenomenon of spin waves is studied. It is shown that, despite the fact that interactions between two atoms are nuclear-spin independent, the outcome of a scattering event does not depend on the nuclear spins involved due to the particle indistinguishability effects at low collision energies. This effect gives rise to quantum phenomena on a macroscopic scale via the occurrence of spin waves. (author). 185 refs.; 34 figs

  2. Distilling two-center-interference information during tunneling of aligned molecules with orthogonally polarized two-color laser fields

    Science.gov (United States)

    Gao, F.; Chen, Y. J.; Xin, G. G.; Liu, J.; Fu, L. B.

    2017-12-01

    When electrons tunnel through a barrier formed by the strong laser field and the two-center potential of a diatomic molecule, a double-slit-like interference can occur. However, this interference effect can not be probed directly right now, as it is strongly coupled with other dynamical processes during tunneling. Here, we show numerically and analytically that orthogonally polarized two-color (OTC) laser fields are capable of resolving the interference effect in tunneling, while leaving clear footprints of this effect in photoelectron momentum distributions. Moreover, this effect can be manipulated by changing the relative field strength of OTC fields.

  3. Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

    Science.gov (United States)

    Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

    2017-12-01

    There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

  4. Micromagnetism in (001) magnetite by spin-polarized low-energy electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Figuera, Juan de la, E-mail: juan.delafiguera@iqfr.csic.es [Instituto de Química-Física “Rocasolano”, CSIC, Madrid 28006 (Spain); Vergara, Lucía [Instituto de Química-Física “Rocasolano”, CSIC, Madrid 28006 (Spain); N' Diaye, Alpha T. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Quesada, Adrian [Instituto de Cerámica y Vidrio, CSIC, Calle Kelsen 5, 28049, Madrid (Spain); Schmid, Andreas K. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2013-07-15

    Spin-polarized low-energy electron microscopy was used to image a magnetite crystal with (001) surface orientation. Sets of spin-dependent images of magnetic domain patterns observed in this surface were used to map the direction of the magnetization vector with high spatial and angular resolution. We find that domains are magnetized along the surface <110> directions, and domain wall structures include 90° and 180° walls. A type of unusually curved domain walls are interpreted as Néel-capped surface terminations of 180° Bloch walls. - Highlights: ► The (001) surface of magnetite is imaged by spin-polarized low-energy electron microscopy. ► The magnetic domain microstructure is resolved. ► Magnetic easy axes in this surface are found to be along <110> directions. ► Magnetic domain wall structures include wide Néel-caps.

  5. Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

    International Nuclear Information System (INIS)

    Khayatzadeh Mahani, Mohammad Reza; Faizabadi, Edris

    2008-01-01

    The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In x Ga (1-x) As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended

  6. Spin-polarized radioactive isotope beam produced by tilted-foil technique

    International Nuclear Information System (INIS)

    Hirayama, Yoshikazu; Mihara, Mototsugu; Watanabe, Yutaka; Jeong, Sun-Chan; Miyatake, Hiroari; Momota, Sadao; Hashimoto, Takashi; Imai, Nobuaki; Matsuta, Kensaku; Ishiyama, Hironobu; Ichikawa, Shin-ichi; Ishii, Tetsuro; Izumikawa, Takuji; Katayama, Ichiro; Kawakami, Hirokane; Kawamura, Hirokazu; Nishinaka, Ichiro; Nishio, Katsuhisa; Makii, Hiroyuki; Mitsuoka, Shin-ichi

    2013-01-01

    Highlights: • Detail study for tilted foil technique. • New equation for estimating nuclear polarization dependence on the beam energy. • Production of nuclear polarization for heaviest nucleus 123 In in ground state. -- Abstract: The tilted-foil method for producing spin-polarized radioactive isotope beams has been studied using the re-accelerated radioactive 8 Li and 123 In beams produced at Tokai Radioactive Ion Accelerator Complex (TRIAC) facility. We successfully produced polarization in a 8 Li beam of 7.3(5)% using thin polystyrene foils (4.2 μg/cm 2 ). The systematic study of the nuclear polarization as a function of the number of foils and beam energy has been performed, confirming the features of the tilted-foil technique experimentally. After the study, a spin-polarized radioactive 123 In beam, which is the heaviest ever polarized in its ground state by this method, has been successfully generated by the tilted-foil method, for the nuclear spectroscopy around the doubly magic nucleus 132 Sn

  7. Influence of doping admixture and anisotropic tension on behaviour of muon spin polarization in insulators

    International Nuclear Information System (INIS)

    Gorelkin, V.N.; Rubtsov, D.V.

    1997-01-01

    We investigate the model describing a muon tunneling between two equivalent positions in (magnetic) insulators. Crystals are assumed to have concentrations such that the muon tunneling states in a double well potential can be considered as real during the muon lifetime τ μ . In the simplest model there are only two such states: the ground state and the first excited state. Our aim is to calculate lifetimes τ 1 (T) and τ 0 (T) of these muon tunneling states resulting from interaction between the muon and phonons of the sample. In the case of a distorted double well potential, all matrix elements of H-circumflex (ph) int are finite. This leads to rescaling of the first and second orders of the perturbation theory compared with the results for the muon in 'pure' samples. We explain the vanishing of some part of the oscillation frequencies of the muon polarization vector in the framework of a muon-phonon interaction model: for example, it is necessary to take into account that τ 1 (T) decreases more rapidly than τ 0 (T) when the temperature increases. If the muon tunnels through a set of equivalent interstitial positions in a unit cell, the experimental picture of the polarization vector behaviour can change drastically under the action of various strain fields

  8. Measurement of the $t\\bar{t}$ spin correlations and top quark polarization in dileptonic channel

    CERN Document Server

    Khatiwada, Ajeeta

    2017-01-01

    The degree of top polarization and strength of $t\\bar{t}$ correlation are dependent on production dynamics, decay mechanism, and choice of the observables. At the LHC, measurement of the top polarization and spin correlations in $t\\bar{t}$ production is possible through various observables related to the angular distribution of decay leptons. A measurement of differential distribution provides a precision test of the standard model of particle physics and probes for deviations, which could be a sign of new physics. In particular, the phase space for the super-symmetric partner of the top quark can be constrained. Results from the Compact Muon Solenoid (CMS) collaboration for top quark polarization and spin correlation in the dileptonic channel are reviewed briefly in this proceeding. The measurements are obtained using 19.5 fb$^{-1}$ of data collected in pp collisions at the center-of-mass energy of 8 TeV.

  9. Nuclear spin polarized alkali beams (Na, Li): Optical pumping with electro-optically modulated laser beam

    International Nuclear Information System (INIS)

    Reich, H.; Jaensch, H.J.

    1990-01-01

    An improvement of the Heidelberg source for polarized heavy ions (PSI) is described. To produce a nuclear spin polarized atomic Na beam an electro-optically modulated laser beam has been used for optical pumping. An electro-optic modulator (EOM) was constructed with a bandwidth of 1.8 GHz. Without a spin separating Stern-Gerlach magnet it is now possible to prepare a Na atomic beam in one single hyperfine magnetic substate. Thus the beam figure of merit (polarization 2 x intensity of the beam) has been improved by a factor of 4 as compared to the previous setup. Experiences with the new system collected from several beam times are discussed. (orig.)

  10. Thermally induced pure and spin polarized currents in a zigzag silicene nanoribbon based FM/normal/AFM junction

    Science.gov (United States)

    Ghanbari, Atousa; Esmaeilzadeh, Mahdi; Pournaghavi, Nezhat

    2018-01-01

    We study thermally induced spin resolved current in a zigzag silicene nanoribbon when the left and right leads are respectively affected by ferromagnetic (FM) and anti-ferromagnetic (AFM) exchange fields (FM/normal/AFM junction). We show that pure spin current is generated due to the leads temperature difference and the junction can work as a spin Seebeck diode. The pure spin current can be easily controlled by a perpendicular electric field and the junction, in this case, can work as a spin current switch. In addition, we study the effect of a single vacancy and show that the vacancy can slightly destroy the pure spin current property which leads to induce a weak spin polarized current. In the presence of both vacancy and electric field, current with high and tunable spin polarization can be achieved.

  11. Excitation of Self-Localized Spin-Wave Bullets by Spin-Polarized Current in In-Plane Magnetized Magnetic Nano-Contacts: A Micromagnetic Study

    Science.gov (United States)

    2007-10-08

    excitation of microwave spin waves.3,10,11 The analytical theory of spin-wave excitation in magnetic nanocontacts by spin-polarized current performed...linear theory ,3 the propagating spin- wave mode excited at the threshold is a cylindrical spin- wave with the wave vector kL=1.2/Rc and frequency L... Oersted magnetic field, and/or by any other small interaction, neglected in the micromagnetic model. To make the excitation of subcritical modes12,15

  12. Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

    International Nuclear Information System (INIS)

    Paul, William; Lutz, Christopher P.; Heinrich, Andreas J.; Baumann, Susanne

    2016-01-01

    We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

  13. Discussion on data correction for Polarization Analysis with a 3He spin filter analyzer

    Science.gov (United States)

    Babcock, Earl; Salhi, Zahir; Kentzinger, Emmanuel; Mattauch, Stefan; Ioffe, Alexander

    2017-06-01

    Fully polarized neutron reflectometry and grazing incidence small angle neutron scattering are effective methods to explore magnetic structures on the nm to μm length scales. This paper is an outline of how to fully correct for the polarization analysis (PA) inefficiencies of such an instrument and to determine the error contributions of the neutron polarizer and analyzer. This discussion considers the exact case of the polarization analysis instrumentation used on the MARIA neutron reflectometer at the MLZ or for a general polarized neutron scattering instrument using at least one 3He neutron spin filter that has the capability for adiabatic fast passage nuclear magnetic resonance flipping of the 3He polarization. This paper will work to build a conceptual understanding of how the inefficiencies of neutron polarization elements affect measured data in order to stress and encourage the application of PA corrections and to help perform successful measurements. Then, using data from a fully polarized neutron reflectometer test measurement we show how it is possible to recover signals on the order of, or even smaller than, the inefficiencies, or bleed-through, of the neutron polarization devices used.

  14. Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Hurtado, A. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Institute of Photonics, Physics Department, University of Strathclyde, Wolfson Centre, 106 Rottenrow East, Glasgow G4 0NW, Scotland (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2015-01-12

    We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in future optical systems.

  15. Stability of superfluid phases in the 2D spin-polarized attractive Hubbard model

    Science.gov (United States)

    Kujawa-Cichy, A.; Micnas, R.

    2011-08-01

    We study the evolution from the weak coupling (BCS-like limit) to the strong coupling limit of tightly bound local pairs (LPs) with increasing attraction, in the presence of the Zeeman magnetic field (h) for d=2, within the spin-polarized attractive Hubbard model. The broken symmetry Hartree approximation as well as the strong coupling expansion are used. We also apply the Kosterlitz-Thouless (KT) scenario to determine the phase coherence temperatures. For spin-independent hopping integrals (t↑=t↓), we find no stable homogeneous polarized superfluid (SCM) state in the ground state for the strong attraction and obtain that for a two-component Fermi system on a 2D lattice with population imbalance, phase separation (PS) is favoured for a fixed particle concentration, even on the LP (BEC) side. We also examine the influence of spin-dependent hopping integrals (mass imbalance) on the stability of the SCM phase. We find a topological quantum phase transition (Lifshitz type) from the unpolarized superfluid phase (SC0) to SCM and tricritical points in the h-|U| and t↑/t↓-|U| ground-state phase diagrams. We also construct the finite temperature phase diagrams for both t↑=t↓ and t↑≠t↓ and analyze the possibility of occurrence of a spin-polarized KT superfluid.

  16. Spin-polarized current and shot noise in the presence of spin flip in a quantum dot via nonequilibrium Green's functions

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Jauho, Antti-Pekka; Egues, J.C.

    2008-01-01

    Using nonequilibrium Green's functions we calculate the spin-polarized current and shot noise in a ferromagnet-quantum-dot-ferromagnet system. Both parallel (P) and antiparallel (AP) magnetic configurations are considered. Coulomb interaction and coherent spin flip (similar to a transverse magnet...

  17. Corrections to nucleon spin structure asymmetries measured on nuclear polarized targets

    International Nuclear Information System (INIS)

    Rondon, O.A.

    1999-01-01

    The nucleon spin structure functions have been extracted from measurements of asymmetries in deep inelastic scattering of polarized leptons on polarized nuclei. The polarized nuclei present in practical targets: H, 2 H, 3 He, 14 N, 15 N, 6 Li, and 7 Li, are, with the exception of hydrogen, systems of bound nucleons, some of which can attain significant degrees of alignment. All the aligned nucleons contribute to the asymmetries. The contributions of each nuclear species to the asymmetry have to be carefully determined, before a reliable value for the net nucleon asymmetry is obtained. For this purpose, the spin component of the nuclear angular momentum for every nuclear state and the probability of each state have to be known with sufficient accuracy. In this paper I discuss the basic corrections used to estimate the contributions of the different nuclei, with emphasis on the A=6 and 7 Li isotopes present in the Li 2 H polarized target used during SLAC Experiment 155 to study the deuteron spin structure. copyright 1999 The American Physical Society

  18. Polarization experiments with the SPIN setup at the ITEP synchrotron

    CERN Document Server

    Alekseev, I G; Kanavets, V P; Koroleva, L I; Morozov, B V; Nesterov, V M; Ryltzov, V V; Svirida, D N; Sulimov, A D; Zhurkin, V V; Beloglasov, Yu A; Kovalev, A I; Kruglov, S P; Novinsky, D V; Shchedrov, V A; Sumachev, Yu V; Trautman, V Yu; Bazhanov, N A; Bunyatova, E I

    2002-01-01

    New experimental data on the spin-rotation parameters A and R measured for elastic pi /sup +or-/p scattering in the resonance region and on the asymmetry in pC scattering at primary momenta in the range 1.35-2.02 GeV/c, as well as in quasielastic proton scattering on nuclei in the same momentum range, are summarized., All these data were recently obtained by using the proton synchrotron installed at the Institute of Theoretical and Experimental Physics (ITEP, Moscow). The spectrum and features of seven isospin-3/2 baryon resonances that form a peak in the total cross section at a c.m. energy of 1.9 GeV are analyzed on the basis of new data on the parameters A and R, and the results of this analysis are presented. The experiments surveyed in this article were performed by a collaboration of researchers from ITEP and the Petersburg Nuclear Physics Institute (PNPI, Gatchina), the ITEP-PNPI collaboration. (29 refs).

  19. Spin susceptibility of the topological superconductor UPt3 from polarized neutron diffraction

    Science.gov (United States)

    Gannon, W. J.; Halperin, W. P.; Eskildsen, M. R.; Dai, Pengcheng; Hansen, U. B.; Lefmann, K.; Stunault, A.

    2017-07-01

    Experiment and theory indicate that UPt3 is a topological superconductor in an odd-parity state, based in part from the temperature independence of the NMR Knight shift. However, quasiparticle spin-flip scattering near a surface, where the Knight shift is measured, might be responsible. We use polarized neutron scattering to measure the bulk susceptibility with H ∥c , finding consistency with the Knight shift but inconsistency with theory for this field orientation. We infer that neither spin susceptibility nor a Knight shift are a reliable indication of odd parity.

  20. L'effet tunnel dépendant du spin comme sonde du micromagnétisme et du transport d'électrons chauds : application aux capteurs

    OpenAIRE

    LACOUR, Daniel

    2002-01-01

    C. Chappert A. Fert M. Hehn F. Nguyen Van Dau A. Schuhl A. Thiaville; Studies of the spin dependent tunneling effect in ferromagnetic metal /insulating/ferromagnetic metal stacks are being actively pursued for their high application potential (magnetic sensors, random access memories, read heads... ). The resistance of these devices is directly link to the relative orientation of the electrode magnetizations. The high sensitivity of spin dependent tunneling effect to the electrodes magnetic c...