Solvable model of spin-dependent transport through a finite array of quantum dots

International Nuclear Information System (INIS)

Avdonin, S A; Dmitrieva, L A; Kuperin, Yu A; Sartan, V V

2005-01-01

The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to a 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the effective Hamiltonian of the device is shown to result in a dependence of transmission coefficient on the spin orientation. The difference of transmission probabilities for singlet and triplet channels can reach a few per cent for a single quantum dot. For several quantum dots in the array due to interference effects it can reach approximately 100% for some energy intervals. For the same energy intervals the conductance of the device reaches the value ∼1 in [e 2 /πℎ] units. As a result a model of the spin gun which transforms the spin-unpolarized electron beam into a completely polarized one is suggested

Optical spin generation/detection and spin transport lifetimes

International Nuclear Information System (INIS)

Miah, M. Idrish

2011-01-01

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Optical spin generation/detection and spin transport lifetimes

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-02-25

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Spin-dependent transport and functional design in organic ferromagnetic devices

Directory of Open Access Journals (Sweden)

Guichao Hu

2017-09-01

Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

Morphology effects on spin-dependent transport and recombination in polyfluorene thin films

Science.gov (United States)

Miller, Richards; van Schooten, K. J.; Malissa, H.; Joshi, G.; Jamali, S.; Lupton, J. M.; Boehme, C.

2016-12-01

intermediate charge-carrier pair states is dominant, while at low temperatures, additional signatures of spin-dependent charge transport through the interaction of polarons with triplet excitons are seen in the half-field resonance of a triplet spin-1 species. This additional contribution arises since triplet lifetimes are increased at lower temperatures. We tentatively conclude that spectral broadening induced by hyperfine coupling is slightly weaker in the more ordered β-phase than in the glassy phase since protons are more evenly spaced, whereas broadening effects due to spin-orbit coupling, which impacts the distribution of g -factors, appear to be somewhat more significant in the β-phase.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

Energy Technology Data Exchange (ETDEWEB)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris, E-mail: hammel@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-05-07

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

Science.gov (United States)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris

2015-05-01

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

International Nuclear Information System (INIS)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris

2015-01-01

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems

Spin transport anisotropy in (110)GaAs

Energy Technology Data Exchange (ETDEWEB)

Odilon, D.D.C. Jr.; Rudolph, Joerg; Hey, Rudolf; Santos, Paulo V. [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Iikawa, Fernando [Universidade Estadual de Campinas, IFGW, Campinas SP (Brazil)

2007-07-01

Mobile piezoelectric potentials are used to coherently transport electron spins in GaAs(110) quantum wells (QW) over distances exceeding 60{mu}m. We demonstrate that the dynamics of mobile spins under external magnetic fields depends on the direction of motion in the QW plane. The weak piezoelectric fields impart a non-vanishing average velocity to the carriers, allowing for the direct observation of the carrier momentum dependence of the spin polarization dynamics. While transport along [001] direction presents high in-plane spin relaxation rates, transport along [ anti 110] shows a much weaker external field dependence due to the non-vanishing internal magnetic field. We show that the anisotropy is an intrinsic property of the underling GaAs matrix, associated with the bulk inversion asymmetry contribution to the LS-coupling.

Spin Polarization Oscillations without Spin Precession: Spin-Orbit Entangled Resonances in Quasi-One-Dimensional Spin Transport

Directory of Open Access Journals (Sweden)

D. H. Berman

2014-03-01

Full Text Available Resonant behavior involving spin-orbit entangled states occurs for spin transport along a narrow channel defined in a two-dimensional electron gas, including an apparent rapid relaxation of the spin polarization for special values of the channel width and applied magnetic field (so-called ballistic spin resonance. A fully quantum-mechanical theory for transport using multiple subbands of the one-dimensional system provides the dependence of the spin density on the applied magnetic field and channel width and position along the channel. We show how the spatially nonoscillating part of the spin density vanishes when the Zeeman energy matches the subband energy splittings. The resonance phenomenon persists in the presence of disorder.

Direct observation of the spin-dependent Peltier effect.

Science.gov (United States)

Flipse, J; Bakker, F L; Slachter, A; Dejene, F K; van Wees, B J

2012-02-05

The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. When two materials with different Peltier coefficients are placed in contact with one another, the Peltier effect causes a net flow of heat either towards or away from the interface between them. Spintronics describes the transport of electric charge and spin angular momentum by separate spin-up and spin-down channels in a device. The observation that spin-up and spin-down charge transport channels are able to transport heat independently of each other has raised the possibility that spin currents could be used to heat or cool the interface between materials with different spin-dependent Peltier coefficients. Here, we report the direct observation of the heating and cooling of such an interface by a spin current. We demonstrate this spin-dependent Peltier effect in a spin-valve pillar structure that consists of two ferromagnetic layers separated by a non-ferromagnetic metal. Using a three-dimensional finite-element model, we extract spin-dependent Peltier coefficients in the range -0.9 to -1.3 mV for permalloy. The magnetic control of heat flow could prove useful for the cooling of nanoscale electronic components or devices.

Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons

International Nuclear Information System (INIS)

Li, Xin-Mei; Long, Meng-Qiu; Cui, Li-Ling; Xiao, Jin; Zhang, Xiao-Jiao; Zhang, Dan; Xu, Hui

2014-01-01

Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS 2 ) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS 2 nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena. - Highlights: • The spin-dependent electronic transport of zigzag MoS 2 nanoribbons. • The effects of V-shaped edge defect and H-saturation. • The effects of spin-filter and negative differential resistance can be observed

Coherent and correlated spin transport in nanoscale superconductors

Energy Technology Data Exchange (ETDEWEB)

Morten, Jan Petter

2008-03-15

Motivated by the desire for better understanding of nano electronic systems, we theoretically study the conductance and noise characteristics of current flow between superconductors, ferromagnets, and normal-metals. Such nano structures can reveal information about superconductor proximity effects, spin-relaxation processes, and spintronic effects with potential applications for different areas of mesoscopic physics. We employ the quasiclassical theory of superconductivity in the Keldysh formalism, and calculate the nonequilibrium transport of spin and charge using various approaches like the circuit theory of quantum transport and full counting statistics. For two of the studied structures, we have been able to compare our theory to experimental data and obtain good agreement. Transport and relaxation of spin polarized current in superconductors is governed by energy-dependent transport coefficients and spin-flip rates which are determined by quantum interference effects. We calculate the resulting temperature-dependent spin flow in ferromagnet-superconductor devices. Experimental data for spin accumulation and spin relaxation in a superconducting nano wire is in agreement with the theory, and allows for a spin-flip spectroscopy that determines the dominant mechanism for spin-flip relaxation in the studied samples. A ferromagnet precessing under resonance conditions can give rise to pure spin current injection into superconductors. We find that the absorbed spin current is measurable as a temperature dependent Gilbert damping, which we calculate and compare to experimental data. Crossed Andreev reflection denotes superconducting pairing of electrons flowing from different normal-metal or ferromagnet terminals into a superconductor. We calculate the nonlocal currents resulting from this process in competition with direct electron transport between the normal-metal terminals. We take dephasing into account, and study the nonlocal current when the types of contact in

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Energy Technology Data Exchange (ETDEWEB)

Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2015-12-14

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

International Nuclear Information System (INIS)

Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

2015-01-01

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

Spin transport in spin filtering magnetic tunneling junctions.

Science.gov (United States)

Li, Yun; Lee, Eok Kyun

2007-11-01

Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Spin Transport in Semiconductor heterostructures

International Nuclear Information System (INIS)

Marinescu, Domnita Catalina

2011-01-01

The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

Spin-dependent electronic transport properties of transition metal atoms doped α-armchair graphyne nanoribbons

Science.gov (United States)

Fotoohi, Somayeh; Haji-Nasiri, Saeed

2018-04-01

Spin-dependent electronic transport properties of single 3d transition metal (TM) atoms doped α-armchair graphyne nanoribbons (α-AGyNR) are investigated by non-equilibrium Green's function (NEGF) method combined with density functional theory (DFT). It is found that all of the impurity atoms considered in this study (Fe, Co, Ni) prefer to occupy the sp-hybridized C atom site in α-AGyNR, and the obtained structures remain planar. The results show that highly localized impurity states are appeared around the Fermi level which correspond to the 3d orbitals of TM atoms, as can be derived from the projected density of states (PDOS). Moreover, Fe, Co, and Ni doped α-AGyNRs exhibit magnetic properties due to the strong spin splitting property of the energy levels. Also for each case, the calculated current-voltage characteristic per super-cell shows that the spin degeneracy in the system is obviously broken and the current becomes strongly spin dependent. Furthermore, a high spin-filtering effect around 90% is found under the certain bias voltages in Ni doped α-AGyNR. Additionally, the structure with Ni impurity reveals transfer characteristic that is suitable for designing a spin current switch. Our findings provide a high possibility to design the next generation spin nanodevices with novel functionalities.

Spin-dependent transport properties of oleic acid molecule self-assembled La0.7Sr0.3MnO3 nanoparticles

International Nuclear Information System (INIS)

Xi, L.; Du, J.H.; Ma, J.H.; Wang, Z.; Zuo, Y.L.; Xue, D.S.

2013-01-01

Highlights: ► Spin-dependent transport property of LSMO/oleic acid nanoparticles is investigated. ► Transport properties and MR measured by Cu/nanoparticle assembly/elargol device. ► Non-linear I–V curve indicates a tunneling type transport properties. ► Tunnel barrier height around 1.3 ± 0.15 eV was obtained by fitting I–V curves. ► LFMR of LSMO/oleic acid molecules value reaches −18% with current of 0.1 μA at 10 K. - Abstract: Spin-dependent transport property through molecules is investigated using a monolayer of oleic acid molecule self-assembled half metallic La 0.7 Sr 0.3 MnO 3 (LSMO) nanoparticles, which was synthesized using a coprecipitation method. Fourier transform infrared spectroscopy was used to confirm that one-monolayer oleic acid molecules chemically bond to the LSMO nanoparticles. The transport properties and magnetoresistance (MR) effect of the oleic acid molecule coated LSMO nanoparticles were measured by a direct current four probes method using a Cu/nanoparticle assembly/elargol electrode sandwich device with various temperatures and bias voltages. The non-linear I–V curve indicates a tunneling type transport properties. The tunnel barrier height around 1.3 ± 0.15 eV was obtained by fitting the I–V curve according to the Simmons equation. The magnetoresistance curves can be divided to high-field MR and low-field MR (LFMR) parts. The former is ascribed to the influence of spin disorder or canting within the LSMO nanoparticle surface and the latter one with strong bias dependence is attributed to the spin-dependent tunneling effect through the insulating surface layer of LSMO and oleic acid molecules. The enhanced LFMR effect for oleic acid coated LSMO with respect to the bare LSMO was attributed to the enhanced tunneling transport and weak spin scattering in oleic acid molecule barrier.

Spin-drift transport in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong-4331 (Bangladesh)

2008-02-07

We present a study on spin transport in semiconductors under applied electric fields. Our experiments detect photoinjected electron spins and their relaxation during drift transport in intrinsic and moderately n-doped GaAs, based on the extraordinary Hall (eH) effect. For relatively low electric field (E), the optically spin-induced eH effect in n-doped GaAs is found to be enhanced with increasing doping density and not to depend much on E, indicating that a substantial amount of optical spin polarization is preserved during the drift transport in these extrinsic semiconductors. However, when the spin-oriented electrons are injected with a high E, a very significant decrease is observed in the eH voltage (V{sub eH}) due to an increase in the spin precession frequency of the hot electrons. Spin relaxation by the D'yakonov-Perel' mechanism is calculated, and is suggested to be the reason for such a rapid spin relaxation for hot electrons under a high E. However, in an intrinsic GaAs (i-GaAs), a much weaker V{sub eH} is observed and, as the electron spins scattered by holes due to the Coulomb interaction in i-GaAs, the spin relaxation by the Bir-Aronov-Pikus mechanism is considered. Skew scattering and side jump as possible mechanisms of the optically spin-induced transverse Hall currents are discussed. Based on a spin drift-diffusion model, drift and diffusion contributions to the V{sub eH} are examined. The results are also discussed in comparison with theoretical investigations.

Spin-dependent optics with metasurfaces

Directory of Open Access Journals (Sweden)

Xiao Shiyi

2016-11-01

Full Text Available Optical spin-Hall effect (OSHE is a spin-dependent transportation phenomenon of light as an analogy to its counterpart in condensed matter physics. Although being predicted and observed for decades, this effect has recently attracted enormous interests due to the development of metamaterials and metasurfaces, which can provide us tailor-made control of the light-matter interaction and spin-orbit interaction. In parallel to the developments of OSHE, metasurface gives us opportunities to manipulate OSHE in achieving a stronger response, a higher efficiency, a higher resolution, or more degrees of freedom in controlling the wave front. Here, we give an overview of the OSHE based on metasurface-enabled geometric phases in different kinds of configurational spaces and their applications on spin-dependent beam steering, focusing, holograms, structured light generation, and detection. These developments mark the beginning of a new era of spin-enabled optics for future optical components.

Spin Flips versus Spin Transport in Nonthermal Electrons Excited by Ultrashort Optical Pulses in Transition Metals

Science.gov (United States)

Shokeen, V.; Sanchez Piaia, M.; Bigot, J.-Y.; Müller, T.; Elliott, P.; Dewhurst, J. K.; Sharma, S.; Gross, E. K. U.

2017-09-01

A joint theoretical and experimental investigation is performed to understand the underlying physics of laser-induced demagnetization in Ni and Co films with varying thicknesses excited by 10 fs optical pulses. Experimentally, the dynamics of spins is studied by determining the time-dependent amplitude of the Voigt vector, retrieved from a full set of magnetic and nonmagnetic quantities performed on both sides of films, with absolute time reference. Theoretically, ab initio calculations are performed using time-dependent density functional theory. Overall, we demonstrate that spin-orbit induced spin flips are the most significant contributors with superdiffusive spin transport, which assumes only that the transport of majority spins without spin flips induced by scattering does not apply in Ni. In Co it plays a significant role during the first ˜20 fs only. Our study highlights the material dependent nature of the demagnetization during the process of thermalization of nonequilibrium spins.

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2016-07-12

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien

2016-01-01

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Exchange-Dominated Pure Spin Current Transport in Alq3 Molecules.

Science.gov (United States)

Jiang, S W; Liu, S; Wang, P; Luan, Z Z; Tao, X D; Ding, H F; Wu, D

2015-08-21

We address the controversy over the spin transport mechanism in Alq3 utilizing spin pumping in the Y3Fe5O12/Alq3/Pd system. An unusual angular dependence of the inverse spin Hall effect is found. It, however, disappears when the microwave magnetic field is fully in the sample plane, excluding the presence of the Hanle effect. Together with the quantitative temperature-dependent measurements, these results provide compelling evidence that the pure spin current transport in Alq3 is dominated by the exchange-mediated mechanism.

Tuning spin-polarized transport in organic semiconductors

Science.gov (United States)

Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

Science.gov (United States)

Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

2018-05-01

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

International Nuclear Information System (INIS)

Eslami, Leila; Esmaeilzadeh, Mahdi

2014-01-01

Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic / superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic/superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

Out-of-equilibrium spin transport in mesoscopic superconductors.

Science.gov (United States)

Quay, C H L; Aprili, M

2018-08-06

The excitations in conventional superconductors, Bogoliubov quasi-particles, are spin-[Formula: see text] fermions but their charge is energy-dependent and, in fact, zero at the gap edge. Therefore, in superconductors (unlike normal metals) spin and charge degrees of freedom may be separated. In this article, we review spin injection into conventional superconductors and focus on recent experiments on mesoscopic superconductors. We show how quasi-particle spin transport and out-of-equilibrium spin-dependent superconductivity can be triggered using the Zeeman splitting of the quasi-particle density of states in thin-film superconductors with small spin-mixing scattering. Finally, we address the spin dynamics and the feedback of quasi-particle spin imbalances on the amplitude of the superconducting energy gap.This article is part of the theme issue 'Andreev bound states'. © 2018 The Author(s).

Inverse engineering for fast transport and spin control of spin-orbit-coupled Bose-Einstein condensates in moving harmonic traps

Science.gov (United States)

Chen, Xi; Jiang, Ruan-Lei; Li, Jing; Ban, Yue; Sherman, E. Ya.

2018-01-01

We investigate fast transport and spin manipulation of tunable spin-orbit-coupled Bose-Einstein condensates in a moving harmonic trap. Motivated by the concept of shortcuts to adiabaticity, we design inversely the time-dependent trap position and spin-orbit-coupling strength. By choosing appropriate boundary conditions we obtain fast transport and spin flip simultaneously. The nonadiabatic transport and relevant spin dynamics are illustrated with numerical examples and compared with the adiabatic transport with constant spin-orbit-coupling strength and velocity. Moreover, the influence of nonlinearity induced by interatomic interaction is discussed in terms of the Gross-Pitaevskii approach, showing the robustness of the proposed protocols. With the state-of-the-art experiments, such an inverse engineering technique paves the way for coherent control of spin-orbit-coupled Bose-Einstein condensates in harmonic traps.

Nonlocal magnon spin transport in yttrium iron garnet with tantalum and platinum spin injection/detection electrodes

Science.gov (United States)

Liu, J.; Cornelissen, L. J.; Shan, J.; van Wees, B. J.; Kuschel, T.

2018-06-01

We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the electron spin and magnon spin at the heavy metal|YIG interface. Pt and Ta possess opposite signs of the spin Hall angle. Furthermore, their heterostructures with YIG have different interface properties, i.e. spin mixing conductances. By varying the distance between injector and detector, the magnon spin transport is studied. Using a circuit model based on the diffusion-relaxation transport theory, a similar magnon relaxation length of  ∼10 μm was extracted from both Pt and Ta devices. By changing the injector and detector material from Pt to Ta, the influence of interface properties on the magnon spin transport has been observed. For Ta devices on YIG the spin mixing conductance is reduced compared with Pt devices, which is quantitatively consistent when comparing the dependence of the nonlocal signal on the injector-detector distance with the prediction from the circuit model.

Spin-dependent hot electron transport and nano-scale magnetic imaging of metal/Si structures

International Nuclear Information System (INIS)

Kaidatzis, A.

2008-10-01

In this work, we experimentally study spin-dependent hot electron transport through metallic multilayers (ML), containing single magnetic layers or 'spin-valve' (SV) tri layers. For this purpose, we have set up a ballistic electron emission microscope (BEEM), a three terminal extension of scanning tunnelling microscopy on metal/semiconductor structures. The implementation of the BEEM requirements into the sample fabrication is described in detail. Using BEEM, the hot electron transmission through the ML's was systematically measured in the energy range 1-2 eV above the Fermi level. By varying the magnetic layer thickness, the spin-dependent hot electron attenuation lengths were deduced. For the materials studied (Co and NiFe), they were compared to calculations and other determinations in the literature. For sub-monolayer thickness, a non uniform morphology was observed, with large transmission variations over sub-nano-metric distances. This effect is not yet fully understood. In the imaging mode, the magnetic configurations of SV's were studied under field, focusing on 360 degrees domain walls in Co layers. The effects of the applied field intensity and direction on the DW structure were studied. The results were compared quantitatively to micro-magnetic calculations, with an excellent agreement. From this, it can be shown that the BEEM magnetic resolution is better than 50 nm. (author)

Ab initio study of spin-dependent transport in carbon nanotubes with iron and vanadium adatoms

DEFF Research Database (Denmark)

Fürst, Joachim Alexander; Brandbyge, Mads; Jauho, Antti-Pekka

2008-01-01

(majority or minority) being scattered depends on the adsorbate and is explained in terms of d-state filling. We contrast the single-walled carbon nanotube results to the simpler case of the adsorbate on a flat graphene sheet with periodic boundary conditions and corresponding width in the zigzag direction......We present an ab initio study of spin-dependent transport in armchair carbon nanotubes with transition metal adsorbates: iron or vanadium. The method based on density functional theory and nonequilibrium Green's functions is used to compute the electronic structure and zero-bias conductance...

Magnon Mode Selective Spin Transport in Compensated Ferrimagnets.

Science.gov (United States)

Cramer, Joel; Guo, Er-Jia; Geprägs, Stephan; Kehlberger, Andreas; Ivanov, Yurii P; Ganzhorn, Kathrin; Della Coletta, Francesco; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Kosel, Jürgen; Kläui, Mathias; Goennenwein, Sebastian T B

2017-06-14

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

Magnon Mode Selective Spin Transport in Compensated Ferrimagnets

KAUST Repository

Cramer, Joel

2017-04-13

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

Magnon Mode Selective Spin Transport in Compensated Ferrimagnets

KAUST Repository

Cramer, Joel; Guo, Er-Jia; Geprä gs, Stephan; Kehlberger, Andreas; Ivanov, Yurii P.; Ganzhorn, Kathrin; Della Coletta, Francesco; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Kosel, Jü rgen; Klä ui, Mathias; Goennenwein, Sebastian T. B.

2017-01-01

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

Acoustically induced spin transport in (110)GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Couto, Odilon D.D. Jr.

2008-09-29

In this work, we employ surface acoustic waves (SAWs) to transport and manipulate optically generated spin ensembles in (110) GaAs quantum wells (QWs). The strong carrier confinement into the SAW piezoelectric potential allows for the transport of spin-polarized carrier packets along well-defined channels with the propagation velocity of the acoustic wave. In this way, spin transport over distances exceeding 60 m is achieved, corresponding to spin lifetimes longer than 20 ns. The demonstration of such extremely long spin lifetimes is enabled by three main factors: (i) Suppression of the D'yakonov-Perel' spin relaxation mechanism for z-oriented spins in (110) IIIV QWs; (ii) Suppression of the Bir-Aronov-Pikus spin relaxation mechanism caused by the type-II SAW piezoelectric potential; (iii) Suppression of spin relaxation induced by the mesoscopic carrier confinement into narrow stripes along the SAW wave front direction. A spin transport anisotropy under external magnetic fields (B{sub ext}) is demonstrated for the first time. Employing the well-defined average carrier momentum impinged by the SAW, we analyze the spin dephasing dynamics during transport along the [001] and [1 anti 10] in-plane directions. For transport along [001], fluctuations of the internal magnetic field (B{sub int}), which arises from the spin-orbit interaction associated with the bulk inversion asymmetry of the crystal, lead to decoherence within 2 ns as the spins precess around B{sub ext}. In contrast, for transport along the [1 anti 10] direction, the z-component of the spin polarization is maintained for times one order of magnitude longer due to the non-zero average value of B{sub int}. The dephasing anisotropy between the two directions is fully understood in terms of the dependence of the spin-orbit coupling on carrier momentum direction, as predicted by the D'yakonov-Perel' mechanism for the (110) system. (orig.)

Spin injection and transport in semiconductor and metal nanostructures

Science.gov (United States)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

International Nuclear Information System (INIS)

Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

2012-01-01

Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

Heat Transport in Gapped Spin-Chain Systems

International Nuclear Information System (INIS)

Shimshoni, E.

2006-01-01

Full Text: We study the contribution of magnetic excitations to the heat transport in gapped spin-chain systems. These systems are characterized by a substantially enhanced heat conductivity, which can be traced back to the existence of weakly violated conservation laws. We focus particularly on the behavior of clean two-leg spin ladder compounds, where one-dimensional exotic spin excitations are coupled to three-dimensional phonons. We show that the contributions of the two types of heat carriers can not be easily disentangled. Depending on the ratios of spin gaps and the Debye energy, the heat conductivity can be either exponentially increasing or exponentially decreasing as a function of temperature (T). In addition, the magnetic contribution to the total heat conductivity may be either positive or negative. We discuss its T-dependence in various possible regimes, and note that in most regimes it is dominated by spin-phonon drag: the two types of heat carriers have almost the

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Diffusion equation and spin drag in spin-polarized transport

DEFF Research Database (Denmark)

Flensberg, Karsten; Jensen, Thomas Stibius; Mortensen, Asger

2001-01-01

We study the role of electron-electron interactions for spin-polarized transport using the Boltzmann equation, and derive a set of coupled transport equations. For spin-polarized transport the electron-electron interactions are important, because they tend to equilibrate the momentum of the two-s...

Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

Science.gov (United States)

Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

Non-linear spin transport in magnetic semiconductor superlattices

International Nuclear Information System (INIS)

Bejar, Manuel; Sanchez, David; Platero, Gloria; MacDonald, A.H.

2004-01-01

The electronic spin dynamics in DC-biased n-doped II-VI semiconductor multiquantum wells doped with magnetic impurities is presented. Under certain range of electronic doping, conventional semiconductor superlattices present self-sustained oscillations. Magnetically doped wells (Mn) present large spin splittings due to the exchange interaction. The interplay between non-linear interwell transport, the electron-electron interaction and the exchange between electrons and the magnetic impurities produces interesting time-dependent features in the spin polarization current tuned by an external magnetic field

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung

2015-04-06

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurelien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-01-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

Science.gov (United States)

Sasaki, Tomoyuki; Ando, Yuichiro; Kameno, Makoto; Tahara, Takayuki; Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Shiraishi, Masashi

2014-09-01

Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in nondegenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 μm and spin rotation greater than 4π at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

Spin-transport-phenomena in metals, semiconductors, and insulators

Energy Technology Data Exchange (ETDEWEB)

Althammer, Matthias Klaus

2012-07-19

Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Dark states in spin-polarized transport through triple quantum dot molecules

Science.gov (United States)

Wrześniewski, K.; Weymann, I.

2018-02-01

We study the spin-polarized transport through a triple-quantum-dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique, including up to the second order of perturbation expansion with respect to the tunnel coupling. The emphasis is put on the impact of dark states on spin-resolved transport characteristics. It is shown that the interplay of coherent population trapping and cotunneling processes results in a highly nontrivial behavior of the tunnel magnetoresistance, which can take negative values. Moreover, a super-Poissonian shot noise is found in transport regimes where the current is blocked by the formation of dark states, which can be additionally enhanced by spin dependence of tunneling processes, depending on the magnetic configuration of the device. The mechanisms leading to those effects are thoroughly discussed.

Electronic transport through EuO spin-filter tunnel junctions

KAUST Repository

Jutong, Nuttachai

2012-11-12

Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

Charge and spin transport in mesoscopic superconductors

Directory of Open Access Journals (Sweden)

M. J. Wolf

2014-02-01

Full Text Available Background: Non-equilibrium charge transport in superconductors has been investigated intensely in the 1970s and 1980s, mostly in the vicinity of the critical temperature. Much less attention has been paid to low temperatures and the role of the quasiparticle spin.Results: We report here on nonlocal transport in superconductor hybrid structures at very low temperatures. By comparing the nonlocal conductance obtained by using ferromagnetic and normal-metal detectors, we discriminate charge and spin degrees of freedom. We observe spin injection and long-range transport of pure, chargeless spin currents in the regime of large Zeeman splitting. We elucidate charge and spin transport by comparison to theoretical models.Conclusion: The observed long-range chargeless spin transport opens a new path to manipulate and utilize the quasiparticle spin in superconductor nanostructures.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Velocity barrier-controlled of spin-valley polarized transport in monolayer WSe2 junction

Science.gov (United States)

Qiu, Xuejun; Lv, Qiang; Cao, Zhenzhou

2018-05-01

In this work, we have theoretically investigated the influence of velocity barrier on the spin-valley polarized transport in monolayer (ML) WSe2 junction with a large spin-orbit coupling (SOC). Both the spin-valley resolved transmission probabilities and conductance are strong dependent on the velocity barrier, as the velocity barrier decreases to 0.06, a spin-valley polarization of exceeding 90% is observed, which is distinct from the ML MoS2 owing to incommensurable SOC. In addition, the spin-valley polarization is further increased above 95% in a ML WSe2 superlattice, in particular, it's found many extraordinary velocity barrier-dependent transport gaps for multiple barrier due to evanescent tunneling. Our results may open an avenue for the velocity barrier-controlled high-efficiency spin and valley polarizations in ML WSe2-based electronic devices.

Ab-initio investigation of spin-dependent transport properties in Fe-doped armchair graphyne nanoribbons

Energy Technology Data Exchange (ETDEWEB)

GolafroozShahri, S.; Roknabadi, M.R., E-mail: roknabad@um.ac.ir; Shahtahmasebi, N.; Behdani, M.

2016-12-15

An ab-initio study on the spin-polarized transport properties of H-passivated Fe-doped graphyne nanoribbons is presented. All the calculations were based on density functional theory (DFT). Doping single magnetic atom on graphyne nanoribbons leads to metallicity which can significantly improve the conductivity. The currents are not degenerate for both up and down spin electrons and they are considerably spin-polarized. Therefore a relatively good spin-filtering can be expected. For configurations with geometric symmetry spin-rectifying is also observed. Therefore they can be applied as a dual spin-filter or a dual spin-diode in spintronic equipment. - Highlights: • The existence of Fe additional electrons lead to metallicity. • Doping magnetic atom on studied n-AGyNRs, has improved the conductance of nanoribbons. • The current for both spin electrons is considerably spin-polarized. • Threshold voltage decreased by increasing the width of ribbon. • For configurations with geometric symmetry spin-rectifying effect was also observed.

Spin transport and relaxation in graphene

International Nuclear Information System (INIS)

Han Wei; McCreary, K.M.; Pi, K.; Wang, W.H.; Li Yan; Wen, H.; Chen, J.R.; Kawakami, R.K.

2012-01-01

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for

Magnetic Nanostructures Spin Dynamics and Spin Transport

CERN Document Server

Farle, Michael

2013-01-01

Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

Gate tunable spin transport in graphene with Rashba spin-orbit coupling

Science.gov (United States)

Tan, Xiao-Dong; Liao, Xiao-Ping; Sun, Litao

2016-10-01

Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

Quantum spin transport in semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Schindler, Christoph

2012-05-15

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Quantum spin transport in semiconductor nanostructures

International Nuclear Information System (INIS)

Schindler, Christoph

2012-01-01

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Intrinsic errors in transporting a single-spin qubit through a double quantum dot

Science.gov (United States)

Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.

2017-07-01

Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Spin-dependent Peltier effect in 3D topological insulators

Science.gov (United States)

Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard

2013-03-01

The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.

Spin-polarized transport properties of Fe atomic chain adsorbed on zigzag graphene nanoribbons

International Nuclear Information System (INIS)

Zhang, Z L; Chen, Y P; Xie, Y E; Zhang, M; Zhong, J X

2011-01-01

The spin-polarized transport properties of Fe atomic chain adsorbed on zigzag graphene nanoribbons (ZGNRs) are investigated using the density-functional theory in combination with the nonequilibrium Green's function method. We find that the Fe chain has drastic effects on spin-polarized transport properties of ZGNRs compared with a single Fe atom adsorbed on the ZGNRs. When the Fe chain is adsorbed on the centre of the ZGNR, the original semiconductor transforms into metal, showing a very wide range of spin-polarized transport. Particularly, the spin polarization around the Fermi level is up to 100%. This is because the adsorbed Fe chain not only induces many localized states but also has effects on the edge states of ZGNR, which can effectively modulate the spin-polarized transports. The spin polarization of ZGNRs is sensitive to the adsorption site of the Fe chain. When the Fe chain is adsorbed on the edge of ZGNR, the spin degeneracy of conductance is completely broken. The spin polarization is found to be more pronounced because the edge state of one edge is destroyed by the additional Fe chain. These results have direct implications for the control of the spin-dependent conductance in ZGNRs with the adsorption of Fe chains.

Handbook of spin transport and magnetism

CERN Document Server

Tsymbal, Evgeny Y

2011-01-01

In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grünberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, balanced account of the state of the art in the field known as spin electronics or spintronics. It reveals how key phenomena first discovered in one class of materials, such as spin injection in metals, have been revisited decades later in other materia

Effect of spin rotation coupling on spin transport

International Nuclear Information System (INIS)

Chowdhury, Debashree; Basu, B.

2013-01-01

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k → ⋅p → perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k → ⋅p → framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied

Effect of spin rotation coupling on spin transport

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2013-12-15

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k{sup →}⋅p{sup →} perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k{sup →}⋅p{sup →} framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied.

Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

Science.gov (United States)

Lou, Xiaohua

2007-03-01

A fully electrical scheme of spin injection, transport, and detection in a single ferromagnet-semiconductor structure has been a long-standing goal in the field of spintronics. In this talk, we report on an experimental demonstration of such a scheme. The devices are fabricated from epitaxial Fe/GaAs (100) heterostructures with highly doped GaAs as a Schottky tunnel barrier. A set of closely spaced Fe contacts on the top of an n-GaAs channel are used as spin injectors and detectors. Reference electrodes are placed at the far ends of the channel, allowing for non-local spin detection [1]. The electro-chemical potential of the detector is sensitive to the relative magnetizations of the injector and detector. In spin-valve measurements, a magnetic field is applied along the Fe easy axis to switch the relative magnetizations of injector and detector from parallel to antiparallel, resulting in a voltage jump that is proportional to the non-equilibrium spin polarization in the channel. A more rigorous test of electrical spin detection is the observation of the Hanle effect, in which an out-of-plane magnetic field is used to modulate and dephase the spin polarization in the channel. The magnitudes of the observed Hanle curves agree with the results of the spin-valve measurements. The dependence of the Hanle curves on temperature and contact separation is studied in detail and is consistent with a drift-diffusion model incorporating spin precession and relaxation. The spin polarization generated by spin injection (reverse bias at the injector) or spin accumulation (forward bias at the injector) is measured using the magneto-optical Kerr effect and is found to be in good agreement with the spin-dependent non-local voltage. Both the transport and optical measurements show a non-linear relationship between the bias voltage at the injector and the spin polarization in the channel. [1] M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling.

Science.gov (United States)

Kalitsov, Alan; Coho, A; Kioussis, Nicholas; Vedyayev, Anatoly; Chshiev, M; Granovsky, A

2004-07-23

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS. Copyright 2004 The American Physical Society

Magnetic field devices for neutron spin transport and manipulation in precise neutron spin rotation measurements

Energy Technology Data Exchange (ETDEWEB)

Maldonado-Velázquez, M. [Posgrado en Ciencias Físicas, Universidad Nacional Autónoma de México, 04510 (Mexico); Barrón-Palos, L., E-mail: libertad@fisica.unam.mx [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 (Mexico); Crawford, C. [University of Kentucky, Lexington, KY 40506 (United States); Snow, W.M. [Indiana University, Bloomington, IN 47405 (United States)

2017-05-11

The neutron spin is a critical degree of freedom for many precision measurements using low-energy neutrons. Fundamental symmetries and interactions can be studied using polarized neutrons. Parity-violation (PV) in the hadronic weak interaction and the search for exotic forces that depend on the relative spin and velocity, are two questions of fundamental physics that can be studied via the neutron spin rotations that arise from the interaction of polarized cold neutrons and unpolarized matter. The Neutron Spin Rotation (NSR) collaboration developed a neutron polarimeter, capable of determining neutron spin rotations of the order of 10{sup −7} rad per meter of traversed material. This paper describes two key components of the NSR apparatus, responsible for the transport and manipulation of the spin of the neutrons before and after the target region, which is surrounded by magnetic shielding and where residual magnetic fields need to be below 100 μG. These magnetic field devices, called input and output coils, provide the magnetic field for adiabatic transport of the neutron spin in the regions outside the magnetic shielding while producing a sharp nonadiabatic transition of the neutron spin when entering/exiting the low-magnetic-field region. In addition, the coils are self contained, forcing the return magnetic flux into a compact region of space to minimize fringe fields outside. The design of the input and output coils is based on the magnetic scalar potential method.

Anisotropic spin transport affected by competition between spin orbit interaction and Zeeman effect in an InGaAs based wire

International Nuclear Information System (INIS)

Nitta, Junsaku; Moulis, Sylvain; Kohda, Makoto

2011-01-01

Spin transport affected by competition between Zeeman effect and spin-orbit interaction (SOI) is investigated in order to check a proposed method to deduce the Rashba SOI α and Dresselhaus SOI β ratio. The experimentally obtained ratio α/β of the present sample is about 4 from angle dependence of magnetoconductance under in-plane magnetic field. The proposed method to detect the ratio by transport measurement is promising although further improvement of sample fabrication and measurement is required.

Potential spin-polarized transport in gold-doped armchair graphene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Srivastava, Pankaj, E-mail: pankajs@iiitm.ac.in [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015, MP (India); Dhar, Subhra [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015, MP (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM-Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur 482005 (India)

2015-04-17

Based on NEGF-DFT computations, systematic investigation of electronic, magnetic and transport properties of AGNRs are done by employing Au through different doping mechanisms. Remarkable Au–AGNR bonding is observed in case of substitution due to the presence of impurity at the edges. Both substitution and adsorption of Au on AGNR surface induce significant changes in the electronic spin transport of the sp{sup 2} hybridized carbon sheets. AGNRs are semiconducting with lower total energy for the FM configuration, and the I–V characteristics reveal semiconductor to metal transition of Au-doped AGNR. The spin injection is voltage controlled in all the investigated Au-doped AGNRs. - Highlights: • Edge Au-substitution promotes semiconductor–metal transition in AGNR. • NDR due to bias-dependent transmission in Au-substituted AGNRs. • Voltage controlled spin injection in all investigated Au-doped AGNRs. • Strong spin polarization occurs at 0.5 V in Au-hole adsorbed AGNRs.

Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

International Nuclear Information System (INIS)

Ma, Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Gee

2013-01-01

The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. - Highlights: ► The spin polarized transport through a diluted magnetic quantum dot is studied. ► The model is based on the Green’s function and the equation of motion method.► The charge and spin currents and tunnel magnetoresistance (TMR) are investigated. ► The system is suitable for current-induced spin-transfer torque application. ► A large tunneling current and a high TMR are possible for sensor application.

Magnon spin transport driven by the magnon chemical in a magnetic insulator

NARCIS (Netherlands)

Cornelissen, L.J.; Peters, K.J.H.; Bauer, G.E.W.; Duine, R.A.; van Wees, B.J.

2016-01-01

We develop a linear-response transport theory of diffusive spin and heat transport by magnons in magnetic insulators with metallic contacts. The magnons are described by a position-dependent temperature and chemical potential that are governed by diffusion equations with characteristic relaxation

Interaction of spin and vibrations in transport through single-molecule magnets.

Science.gov (United States)

May, Falk; Wegewijs, Maarten R; Hofstetter, Walter

2011-01-01

We study electron transport through a single-molecule magnet (SMM) and the interplay of its anisotropic spin with quantized vibrational distortions of the molecule. Based on numerical renormalization group calculations we show that, despite the longitudinal anisotropy barrier and small transverse anisotropy, vibrational fluctuations can induce quantum spin-tunneling (QST) and a QST-Kondo effect. The interplay of spin scattering, QST and molecular vibrations can strongly enhance the Kondo effect and induce an anomalous magnetic field dependence of vibrational Kondo side-bands.

Transport spin dependent in nanostructures: Current and geometry effect of quantum dots in presence of spin-orbit interaction

Science.gov (United States)

Paredes-Gutiérrez, H.; Pérez-Merchancano, S. T.; Beltran-Rios, C. L.

2017-12-01

In this work, we study the quantum electron transport through a Quantum Dots Structure (QDs), with different geometries, embedded in a Quantum Well (QW). The behaviour of the current through the nanostructure (dot and well) is studied considering the orbital spin coupling of the electrons and the Rashba effect, by means of the second quantization theory and the standard model of Green’s functions. Our results show the behaviour of the current in the quantum system as a function of the electric field, presenting resonant states for specific values of both the external field and the spin polarization. Similarly, the behaviour of the current on the nanostructure changes when the geometry of the QD and the size of the same are modified as a function of the polarization of the electron spin and the potential of quantum confinement.

Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

KAUST Repository

Ndiaye, Papa Birame

2017-10-31

In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are

Spin-dependent transport in epitaxial Fe wires on GaAs(110); Spinabhaengiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)

Energy Technology Data Exchange (ETDEWEB)

Hassel, Christoph

2009-08-11

In the present thesis, the spin dependent transport in epitaxial Fe wires as well as in perpendicularly magnetized multilayer wires is investigated. The main focus is on the investigation of quantum transport phenomena, the domain wall resistance as well as the current induced domain wall motion. Epitaxial Fe wires are prepared from epitaxial Fe films by means of electron beam lithography. Because of the intrinsic magnetic anisotropy, it is possible to prepare wires with a remanent transversal magnetization. Magnetic force microscopy is used to image the magnetic state of single wires. The magnetization reversal behaviour of these wires is investigated in detail using magnetoresistance measurements. These measurements are dominated by effects of the anisotropic magnetoresistance and can be explained by micromagnetic calculations. For the first time, quantum transport phenomena in epitaxial Fe wires are studied by magnetoresistance measurements for temperatures down to 20 mK. These measurements clearly indicate that, independent of the wire width and orientation, no contribution due to weak electron localization can be observed. The results are quantitatively explained within the framework of enhanced electron-electron interactions. Furthermore, by reducing the wire width the onset of the transition from two-dimensional to one-dimensional behaviour is found. To determine the domain wall resistance, a different number of domain walls is created in various structures, whereby the epitaxial samples allow to investigate different domain wall structures. First, a technique based on the stray field of a magnetic force microscope tip is presented. Furthermore, the influence of the shape anisotropy on the coercive field of single wires is used. Contributions to the observed resistance change due to the anisotropic magnetoresistance are calculated using micromagnetic simulations. A positive intrinsic relative resistance increase of 0.2% within the domain wall is found at

Interaction of spin and vibrations in transport through single-molecule magnets

Directory of Open Access Journals (Sweden)

Falk May

2011-10-01

Full Text Available We study electron transport through a single-molecule magnet (SMM and the interplay of its anisotropic spin with quantized vibrational distortions of the molecule. Based on numerical renormalization group calculations we show that, despite the longitudinal anisotropy barrier and small transverse anisotropy, vibrational fluctuations can induce quantum spin-tunneling (QST and a QST-Kondo effect. The interplay of spin scattering, QST and molecular vibrations can strongly enhance the Kondo effect and induce an anomalous magnetic field dependence of vibrational Kondo side-bands.

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

Science.gov (United States)

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-05-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque, are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport vectors is demonstrated that enables the estimation of tunneling spin transport properties based on experimentally measured SP-STM images. A considerable tunability of the spin transport vectors by the involved spin polarizations is also highlighted. These possibilities and the combined theory of tunneling charge and vector spin transport pave the way for gaining deep insight into electric-current-induced tunneling spin transport properties in SP-STM and to the related dynamics of complex magnetic textures at surfaces.

Spin Transport in Ferromagnetic and Antiferromagnetic Textures

KAUST Repository

Akosa, Collins A.

2016-12-07

In this dissertation, we provide an accurate description of spin transport in magnetic textures and in particular, we investigate in detail, the nature of spin torque and magnetic damping in such systems. Indeed, as will be further discussed in this thesis, the current-driven velocity of magnetic textures is related to the ratio between the so-called non-adiabatic torque and magnetic damping. Uncovering the physics underlying these phenomena can lead to the optimal design of magnetic systems with improved efficiency. We identified three interesting classes of systems which have attracted enormous research interest (i) Magnetic textures in systems with broken inversion symmetry: We investigate the nature of magnetic damping in non-centrosymmetric ferromagnets. Based on phenomenological and microscopic derivations, we show that the magnetic damping becomes chiral, i.e. depends on the chirality of the magnetic texture. (ii) Ferromagnetic domain walls, skyrmions and vortices: We address the physics of spin transport in sharp disordered magnetic domain walls and vortex cores. We demonstrate that upon spin-independent scattering, the non-adiabatic torque can be significantly enhanced. Such an enhancement is large for vortex cores compared to transverse domain walls. We also show that the topological spin currents owing in these structures dramatically enhances the non-adiabaticity, an effect unique to non-trivial topological textures (iii) Antiferromagnetic skyrmions: We extend this study to antiferromagnetic skyrmions and show that such an enhanced topological torque also exist in these systems. Even more interestingly, while such a non-adiabatic torque inuences the undesirable transverse velocity of ferromagnetic skyrmions, in antiferromagnetic skyrmions, the topological non-adiabatic torque directly determines the longitudinal velocity. As a consequence, scaling down the antiferromagnetic skyrmion results in a much more efficient spin torque.

Magnon spin transport driven by the magnon chemical potential in a magnetic insulator

NARCIS (Netherlands)

Cornelissen, L J; Peters, K J H; Bauer, G. E. W.; Duine, R A; van Wees, B J

2016-01-01

We develop a linear-response transport theory of diffusive spin and heat transport by magnons in magnetic insulators with metallic contacts. The magnons are described by a position-dependent temperature and chemical potential that are governed by diffusion equations with characteristic relaxation

Magnon spin transport driven by the magnon chemical potential in a magnetic insulator

NARCIS (Netherlands)

Cornelissen, L.J.; Peters, K. J H; Bauer, G.E.; Duine, R. A.; Van Wees, B. J.

2016-01-01

We develop a linear-response transport theory of diffusive spin and heat transport by magnons in magnetic insulators with metallic contacts. The magnons are described by a position-dependent temperature and chemical potential that are governed by diffusion equations with characteristic relaxation

Magnon spin transport driven by the magnon chemical potential in a magnetic insulator

NARCIS (Netherlands)

Cornelissen, Ludo J.; Peters, Kevin J. H.; Duine, Rembert A.|info:eu-repo/dai/nl/304830127; Bauer, Gerrit E. W.; Wees, Bart J. van

2016-01-01

We develop a linear-response transport theory of diffusive spin and heat transport by magnons in magnetic insulators with metallic contacts. The magnons are described by a position dependent temperature and chemical potential that are governed by diffusion equations with characteristic relaxation

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Science.gov (United States)

Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

2017-03-01

We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

Laser-assisted spin-polarized transport in graphene tunnel junctions

International Nuclear Information System (INIS)

Ding Kaihe; Zhu Zhengang; Berakdar, Jamal

2012-01-01

The Keldysh nonequilibrium Green’s function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. (paper)

Spin-pump-induced spin transport in a thermally evaporated pentacene film

Energy Technology Data Exchange (ETDEWEB)

Tani, Yasuo; Shikoh, Eiji, E-mail: shikoh@elec.eng.osaka-cu.ac.jp [Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan); Teki, Yoshio [Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan)

2015-12-14

We report the spin-pump-induced spin transport properties of a pentacene film prepared by thermal evaporation. In a palladium(Pd)/pentacene/Ni{sub 80}Fe{sub 20} tri-layer sample, a pure spin-current is generated in the pentacene layer by the spin-pumping of Ni{sub 80}Fe{sub 20}, which is independent of the conductance mismatch problem in spin injection. The spin current is absorbed into the Pd layer, converted into a charge current with the inverse spin-Hall effect in Pd, and detected as an electromotive force. This is clear evidence for the pure spin current at room temperature in pentacene films prepared by thermal evaporation.

Spin-orbit coupling, electron transport and pairing instabilities in two-dimensional square structures

Energy Technology Data Exchange (ETDEWEB)

Kocharian, Armen N. [Department of Physics, California State University, Los Angeles, CA 90032 (United States); Fernando, Gayanath W.; Fang, Kun [Department of Physics, University of Connecticut, Storrs, Connecticut 06269 (United States); Palandage, Kalum [Department of Physics, Trinity College, Hartford, Connecticut 06106 (United States); Balatsky, Alexander V. [AlbaNova University Center Nordita, SE-106 91 Stockholm (Sweden)

2016-05-15

Rashba spin-orbit effects and electron correlations in the two-dimensional cylindrical lattices of square geometries are assessed using mesoscopic two-, three- and four-leg ladder structures. Here the electron transport properties are systematically calculated by including the spin-orbit coupling in tight binding and Hubbard models threaded by a magnetic flux. These results highlight important aspects of possible symmetry breaking mechanisms in square ladder geometries driven by the combined effect of a magnetic gauge field spin-orbit interaction and temperature. The observed persistent current, spin and charge polarizations in the presence of spin-orbit coupling are driven by separation of electron and hole charges and opposite spins in real-space. The modeled spin-flip processes on the pairing mechanism induced by the spin-orbit coupling in assembled nanostructures (as arrays of clusters) engineered in various two-dimensional multi-leg structures provide an ideal playground for understanding spatial charge and spin density inhomogeneities leading to electron pairing and spontaneous phase separation instabilities in unconventional superconductors. Such studies also fall under the scope of current challenging problems in superconductivity and magnetism, topological insulators and spin dependent transport associated with numerous interfaces and heterostructures.

Spin-orbit coupling, electron transport and pairing instabilities in two-dimensional square structures

Directory of Open Access Journals (Sweden)

Armen N. Kocharian

2016-05-01

Full Text Available Rashba spin-orbit effects and electron correlations in the two-dimensional cylindrical lattices of square geometries are assessed using mesoscopic two-, three- and four-leg ladder structures. Here the electron transport properties are systematically calculated by including the spin-orbit coupling in tight binding and Hubbard models threaded by a magnetic flux. These results highlight important aspects of possible symmetry breaking mechanisms in square ladder geometries driven by the combined effect of a magnetic gauge field spin-orbit interaction and temperature. The observed persistent current, spin and charge polarizations in the presence of spin-orbit coupling are driven by separation of electron and hole charges and opposite spins in real-space. The modeled spin-flip processes on the pairing mechanism induced by the spin-orbit coupling in assembled nanostructures (as arrays of clusters engineered in various two-dimensional multi-leg structures provide an ideal playground for understanding spatial charge and spin density inhomogeneities leading to electron pairing and spontaneous phase separation instabilities in unconventional superconductors. Such studies also fall under the scope of current challenging problems in superconductivity and magnetism, topological insulators and spin dependent transport associated with numerous interfaces and heterostructures.

Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

International Nuclear Information System (INIS)

Lipperheide, R.; Wille, U.

2006-01-01

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

Spin helical states and spin transport of the line defect in silicene lattice

Energy Technology Data Exchange (ETDEWEB)

Yang, Mou; Chen, Dong-Hai; Wang, Rui-Qiang [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui, E-mail: ykbai@semi.ac.cn [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

2015-02-06

We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin–orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near the line defect and move backward on the other side, and vice versa for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide. - Highlights: • Band structure of silicene with a line defect. • Spin helical states around the line defect and their probability distribution features. • Spin transport along the line defect and that in the bulk silicene.

Controllable spin-charge transport in strained graphene nanoribbon devices

Energy Technology Data Exchange (ETDEWEB)

Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R. [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Qu, Fanyao [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-09-21

We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

Impact of Disorder on Spin Dependent Transport Phenomena

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2016-01-01

the very large number of modes present in the system. We showed that spin-independent disorder can actually wash out these interferences and promote the conservation of the spin signal. In the course of this PhD, we showed that while disorder-induced

Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

KAUST Repository

Ndiaye, Papa Birame

2017-01-01

for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic

Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements

International Nuclear Information System (INIS)

Ho Park, Youn; Kim, Hyung-jun; Chang, Joonyeon; Hee Han, Suk; Eom, Jonghwa; Choi, Heon-Jin; Cheol Koo, Hyun

2013-01-01

The Rashba spin-orbit interaction effective field is always in the plane of the two-dimensional electron gas and perpendicular to the carrier wavevector but the direction of the Dresselhaus field depends on the crystal orientation. These two spin-orbit interaction parameters can be determined separately by measuring and analyzing the Shubnikov-de Haas oscillations for various crystal directions. In the InAs quantum well system investigated, the Dresselhaus term is just 5% of the Rashba term. The gate dependence of the oscillation patterns clearly shows that only the Rashba term is modulated by an external electric field

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

OpenAIRE

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-01-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

Efficient spin transport through polyaniline

Science.gov (United States)

Mendes, J. B. S.; Alves Santos, O.; Gomes, J. P.; Assis, H. S.; Felix, J. F.; Rodríguez-Suárez, R. L.; Rezende, S. M.; Azevedo, A.

2017-01-01

By using the spin pumping process, we show that it is possible to transport a pure spin current across layers of conducting polyaniline (PANI) with several hundred nanometers sandwiched between a film of the ferrimagnetic insulator yttrium iron garnet (YIG) and a thin layer of platinum. The spin current generated by microwave-driven ferromagnetic resonance of the YIG film, injected through the YIG/PANI interface, crosses the whole PANI layer and then is injected into the Pt layer. By means of the inverse spin Hall effect in the Pt, the spin current is converted into charge current and electrically detected as a dc voltage. We measured a spin diffusion length in PANI of 590 ± 40 nm, which is very large compared with normal metals, demonstrating that PANI can be used as an efficient spin current conductor and poor charge current conductor, opening the path towards spintronics applications based in this very attractive material.

Dynamical spin accumulation in large-spin magnetic molecules

Science.gov (United States)

Płomińska, Anna; Weymann, Ireneusz; Misiorny, Maciej

2018-01-01

The frequency-dependent transport through a nanodevice containing a large-spin magnetic molecule is studied theoretically in the Kondo regime. Specifically, the effect of magnetic anisotropy on dynamical spin accumulation is of primary interest. Such accumulation arises due to finite components of frequency-dependent conductance that are off diagonal in spin. Here, employing the Kubo formalism and the numerical renormalization group method, we demonstrate that the dynamical transport properties strongly depend on the relative orientation of spin moments in electrodes of the device, as well as on intrinsic parameters of the molecule. In particular, the effect of dynamical spin accumulation is found to be greatly affected by the type of magnetic anisotropy exhibited by the molecule, and it develops for frequencies corresponding to the Kondo temperature. For the parallel magnetic configuration of the device, the presence of dynamical spin accumulation is conditioned by the interplay of ferromagnetic-lead-induced exchange field and the Kondo correlations.

Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

Science.gov (United States)

Wen, Hua; Zhu, Tiancong; Luo, Yunqiu Kelly; Amamou, Walid; Kawakami, Roland K.

2014-05-01

Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

Realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Ling, Xiaohui [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421002 (China); Yi, Xunong [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Zhou, Xinxing; Liu, Yachao; Shu, Weixing; Wen, Shuangchun [Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Luo, Hailu, E-mail: hailuluo@hnu.edu.cn [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China)

2014-10-13

We report the realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect. By breaking the rotational symmetry of a cylindrical vector beam, the intrinsic vortex phases that the two spin components of the vector beam carries, which is similar to the geometric Pancharatnam-Berry phase, are no longer continuous in the azimuthal direction, and leads to observation of spin accumulation at the opposite edge of the beam. Due to the inherent nature of the phase and independency of light-matter interaction, the observed photonic spin Hall effect is intrinsic. Modulating the topological charge of the vector beam, the spin-dependent splitting can be enhanced and the direction of spin accumulation is switchable. Our findings may provide a possible route for generation and manipulation of spin-polarized photons, and enables spin-based photonics applications.

Multi-scale modeling of spin transport in organic semiconductors

Science.gov (United States)

Hemmatiyan, Shayan; Souza, Amaury; Kordt, Pascal; McNellis, Erik; Andrienko, Denis; Sinova, Jairo

In this work, we present our theoretical framework to simulate simultaneously spin and charge transport in amorphous organic semiconductors. By combining several techniques e.g. molecular dynamics, density functional theory and kinetic Monte Carlo, we are be able to study spin transport in the presence of anisotropy, thermal effects, magnetic and electric field effects in a realistic morphologies of amorphous organic systems. We apply our multi-scale approach to investigate the spin transport in amorphous Alq3 (Tris(8-hydroxyquinolinato)aluminum) and address the underlying spin relaxation mechanism in this system as a function of temperature, bias voltage, magnetic field and sample thickness.

Toward nonlinear magnonics: Intensity-dependent spin-wave switching in insulating side-coupled magnetic stripes

Science.gov (United States)

Sadovnikov, A. V.; Odintsov, S. A.; Beginin, E. N.; Sheshukova, S. E.; Sharaevskii, Yu. P.; Nikitov, S. A.

2017-10-01

We demonstrate that the nonlinear spin-wave transport in two laterally parallel magnetic stripes exhibit the intensity-dependent power exchange between the adjacent spin-wave channels. By the means of Brillouin light scattering technique, we investigate collective nonlinear spin-wave dynamics in the presence of magnetodipolar coupling. The nonlinear intensity-dependent effect reveals itself in the spin-wave mode transformation and differential nonlinear spin-wave phase shift in each adjacent magnetic stripe. The proposed analytical theory, based on the coupled Ginzburg-Landau equations, predicts the geometry design involving the reduction of power requirement to the all-magnonic switching. A very good agreement between calculation and experiment was found. In addition, a micromagnetic and finite-element approach has been independently used to study the nonlinear behavior of spin waves in adjacent stripes and the nonlinear transformation of spatial profiles of spin-wave modes. Our results show that the proposed spin-wave coupling mechanism provides the basis for nonlinear magnonic circuits and opens the perspectives for all-magnonic computing architecture.

Theory of spin-dependent tunnelling in magnetic junctions

International Nuclear Information System (INIS)

Mathon, J.

2002-01-01

Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)

On the spin-dependent sensitivity of XENON100

Energy Technology Data Exchange (ETDEWEB)

Garny, Mathias [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Ibarra, Alejandro; Pato, Miguel; Vogl, Stefan [Technische Univ. Muenchen, Garching (Germany). Physik-Department

2012-11-15

The latest XENON100 data severely constrains dark matter elastic scattering off nuclei, leading to impressive upper limits on the spin-independent cross-section. The main goal of this paper is to stress that the same data set has also an excellent spin-dependent sensitivity, which is of utmost importance in probing dark matter models. We show in particular that the constraints set by XENON100 on the spin-dependent neutron cross-section are by far the best at present, whereas the corresponding spin-dependent proton limits lag behind other direct detection results. The effect of nuclear uncertainties on the structure functions of xenon isotopes is analysed in detail and found to lessen the robustness of the constraints, especially for spin-dependent proton couplings. Notwith-standing, the spin-dependent neutron prospects for XENON1T and DARWIN are very encouraging. We apply our constraints to well-motivated dark matter models and demonstrate that in both mass-degenerate scenarios and the minimal supersymmetric standard model the spin-dependent neutron limits can actually override the spin-independent limits. This opens the possibility of probing additional unexplored regions of the dark matter parameter space with the next generation of ton-scale direct detection experiments.

On the spin-dependent sensitivity of XENON100

International Nuclear Information System (INIS)

Garny, Mathias; Ibarra, Alejandro; Pato, Miguel; Vogl, Stefan

2012-11-01

The latest XENON100 data severely constrains dark matter elastic scattering off nuclei, leading to impressive upper limits on the spin-independent cross-section. The main goal of this paper is to stress that the same data set has also an excellent spin-dependent sensitivity, which is of utmost importance in probing dark matter models. We show in particular that the constraints set by XENON100 on the spin-dependent neutron cross-section are by far the best at present, whereas the corresponding spin-dependent proton limits lag behind other direct detection results. The effect of nuclear uncertainties on the structure functions of xenon isotopes is analysed in detail and found to lessen the robustness of the constraints, especially for spin-dependent proton couplings. Notwith-standing, the spin-dependent neutron prospects for XENON1T and DARWIN are very encouraging. We apply our constraints to well-motivated dark matter models and demonstrate that in both mass-degenerate scenarios and the minimal supersymmetric standard model the spin-dependent neutron limits can actually override the spin-independent limits. This opens the possibility of probing additional unexplored regions of the dark matter parameter space with the next generation of ton-scale direct detection experiments.

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

Science.gov (United States)

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Spin-dependent parton distributions in the nucleon

Energy Technology Data Exchange (ETDEWEB)

Cloet, I.C. [Special Research Centre for the Subatomic Structure of Matter and Department of Physics and Mathematical Physics, University of Adelaide, SA 5005 (Australia); Bentz, W. [Department of Physics, School of Science, Tokai University Hiratsuka-shi, Kanagawa 259-1292 (Japan); Thomas, A.W. [Jefferson Lab, 12000 Jefferson Avenue, Newport News, VA 23606 (United States)

2005-04-15

Spin-dependent quark light-cone momentum distributions are calculated for a nucleon in the nuclear medium. We utilize a modified NJL model where the nucleon is described as a composite quark-diquark state. Scalar and vector mean fields are incorporated in the nuclear medium and these fields couple to the confined quarks in the nucleon. The effect of these fields on the spin-dependent distributions and consequently the axial charges is investigated. Our results for the 'spin-dependent EMC effect' are also discussed.

The spin dependent odderon in the diquark model

Energy Technology Data Exchange (ETDEWEB)

Szymanowski, Lech [National Centre for Nuclear Research (NCBJ), Warsaw (Poland); Zhou, Jian, E-mail: jzhou@sdu.edu.cn [School of Physics, & Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan, Shandong 250100 (China); Nikhef and Department of Physics and Astronomy, VU University Amsterdam, De Boelelaan 1081, NL-1081 HV Amsterdam (Netherlands)

2016-09-10

In this short note, we report a di-quark model calculation for the spin dependent odderon and demonstrate that the asymmetrical color source distribution in the transverse plane of a transversely polarized hadron plays an essential role in yielding the spin dependent odderon. This calculation confirms the earlier finding that the spin dependent odderon is closely related to the parton orbital angular momentum.

Temperature dependence of the spin Seebeck effect in [Fe3O4/Pt]n multilayers

Directory of Open Access Journals (Sweden)

R. Ramos

2017-05-01

Full Text Available We report temperature dependent measurements of the spin Seebeck effect (SSE in multilayers formed by repeated growth of a Fe3O4/Pt bilayer junction. The magnitude of the observed enhancement of the SSE, relative to the SSE in the single bilayer, shows a monotonic increase with decreasing the temperature. This result can be understood by an increase of the characteristic length for spin current transport in the system, in qualitative agreement with the recently observed increase in the magnon diffusion length in Fe3O4 at lower temperatures. Our result suggests that the thermoelectric performance of the SSE in multilayer structures can be further improved by careful choice of materials with suitable spin transport properties.

Transport and spin effects in homogeneous magnetic superlattice

International Nuclear Information System (INIS)

Cardoso, J.L.; Pereyra, P.; Anzaldo-Meneses, A.

2000-09-01

Homogeneous semiconductors under spacially periodic external magnetic fields exhibit spin-band splitting and displacements, more clearly defined than in diluted magnetic semiconductor superlattices. We study the influence of the geometrical parameters and the spin-field interaction on the electronic transport properties. We show that by varying the external magnetic field, one can easily block the transmission of either the spin-up or the spin-down electrons. (author)

Bulk and edge spin transport in topological magnon insulators

Science.gov (United States)

Rückriegel, Andreas; Brataas, Arne; Duine, Rembert A.

2018-02-01

We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin current driven through a normal metal |topological magnon insulator |normal metal heterostructure by a spin accumulation imbalance between the metals, with and without random lattice defects. We show that bulk and edge transport are characterized by different length scales. This results in a characteristic system size where the magnon transport crosses over from being bulk dominated for small systems to edge dominated for larger systems. These findings are generic and relevant for topological transport in systems of nonconserved bosons.

Spin transport in epitaxial graphene

Science.gov (United States)

Tbd, -

2014-03-01

Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-10-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

Science.gov (United States)

Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

2017-09-01

In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

Science.gov (United States)

Jang, Hyuk-Jae; Richter, Curt A

2017-01-01

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reversal of local spins in transport of electrons through a one-dimensional chain

International Nuclear Information System (INIS)

Hu, D.-S.; Xiong, S.-J.

2003-01-01

We investigate the spin reversal of two coupled magnetic impurities in the transport processes of electrons in a one-dimensional chain. The impurities are side coupled to the chain and the electrons are injected and tunneling through it. The transmission coefficient of electrons and the polarization of impurities are calculated by the use of the equivalent single-particle network method for the correlated system. It is found that both the transmission coefficient and the polarization of impurities depend on the initial state of impurities and the impurity spins can be converted into the direction of electron spin if the injected electrons are polarized and the number of electrons is large enough. The evolution of the spin-reversal processes is studied in details

Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure

KAUST Repository

Wang, Xuhui; Ortiz Pauyac, Christian; Manchon, Aurelien

2014-01-01

Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.

Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure

KAUST Repository

Wang, Xuhui

2014-02-07

Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.

Spin current and spin transfer torque in ferromagnet/superconductor spin valves

Science.gov (United States)

Moen, Evan; Valls, Oriol T.

2018-05-01

Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

The Kubo-Greenwood spin-dependent electrical conductivity of 2D transition-metal dichalcogenides and group-IV materials: A Green's function study

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen

2018-04-01

The spin-dependent electrical conductivity of counterparts of graphene, transition-metal dichalcogenides (TMDs) and group-IV nanosheets, have investigated by a magnetic exchange field (MEF)-induction to gain the electronic transport properties of charge carriers. We have implemented a k.p Hamiltonian model through the Kubo-Greenwood formalism in order to address the dynamical behavior of correlated Dirac fermions. Tuning the MEF enables one to control the effective mass of carriers in group-IV and TMDs, differently. We have found the Dirac-like points in a new quantum anomalous Hall (QAH) state at strong MEFs for both structures. For both cases, a broad peak in electrical conductivity originated from the scattering rate and entropy is observed. Spin degeneracy at some critical MEFs is another remarkable point. We have found that in the limit of zero or uniform MEFs with respect to the spin-orbit interaction, the large resulting electrical conductivity depends on the spin sub-bands in group-IV and MLDs. Featuring spin-dependent electronic transport properties, one can provide a new scenario for future possible applications.

Spin resolved electronic transport through N@C20 fullerene molecule between Au electrodes: A first principles study

Science.gov (United States)

Caliskan, Serkan

2018-05-01

Using first principles study, through Density Functional Theory combined with Non Equilibrium Green's Function Formalism, electronic properties of endohedral N@C20 fullerene molecule joining Au electrodes (Au-N@C20) was addressed in the presence of spin property. The electronic transport behavior across the Au-N@C20 molecular junction was investigated by spin resolved transmission, density of states, molecular orbitals, differential conductance and current-voltage (I-V) characteristics. Spin asymmetric variation was clearly observed in the results due to single N atom encapsulated in the C20 fullerene cage, where the N atom played an essential role in the electronic behavior of Au-N@C20. This N@C20 based molecular bridge, exhibiting a spin dependent I-V variation, revealed a metallic behavior within the bias range from -1 V to 1 V. The induced magnetic moment, spin polarization and other relevant quantities associated with the spin resolved transport were elucidated.

Charge-spin Transport in Surface-disordered Three-dimensional Topological Insulators

Science.gov (United States)

Peng, Xingyue

As one of the most promising candidates for the building block of the novel spintronic circuit, the topological insulator (TI) has attracted world-wide interest of study. Robust topological order protected by time-reversal symmetry (TRS) makes charge transport and spin generation in TIs significantly different from traditional three-dimensional (3D) or two-dimensional (2D) electronic systems. However, to date, charge transport and spin generation in 3D TIs are still primarily modeled as single-surface phenomena, happening independently on top and bottom surfaces. In this dissertation, I will demonstrate via both experimental findings and theoretical modeling that this "single surface'' theory neither correctly describes a realistic 3D TI-based device nor reveals the amazingly distinct physical picture of spin transport dynamics in 3D TIs. Instead, I present a new viewpoint of the spin transport dynamics where the role of the insulating yet topologically non-trivial bulk of a 3D TI becomes explicit. Within this new theory, many mysterious transport and magneto-transport anomalies can be naturally explained. The 3D TI system turns out to be more similar to its low dimensional sibling--2D TI rather than some other systems sharing the Dirac dispersion, such as graphene. This work not only provides valuable fundamental physical insights on charge-spin transport in 3D TIs, but also offers important guidance to the design of 3D TI-based spintronic devices.

The temperature dependence of quantum spin pumping generated using electron spin resonance with three-magnon splittings

International Nuclear Information System (INIS)

Nakata, Kouki

2013-01-01

On the basis of the Schwinger–Keldysh formalism, we have closely investigated the temperature dependence of quantum spin pumping generated using electron spin resonance. We have clarified that three-magnon splittings excite non-zero modes of magnons and characterize the temperature dependence of quantum spin pumping generated using electron spin resonance. (paper)

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

Energy Technology Data Exchange (ETDEWEB)

Wang, Y. [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Y., E-mail: stslyl@mail.sysu.edu.cn [School of Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wang, B., E-mail: wangbiao@mail.sysu.edu.cn [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2014-03-15

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter.

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

International Nuclear Information System (INIS)

Wang, Y.; Liu, Y.; Wang, B.

2014-01-01

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter

Charge and Spin Transport in Dilute Magnetic Semiconductors. Final report

International Nuclear Information System (INIS)

Ullrich, Carsten A.

2009-01-01

This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

Science.gov (United States)

Osintsev, D.; Sverdlov, V.; Stanojević, Z.; Makarov, A.; Selberherr, S.

2012-05-01

We study the transport properties of the Datta-Das spin field-effect transistor built on InAs and Si. First, we demonstrate that the amplitude of the magnetoresistance oscillations as a function of the band mismatch between the ferromagnetic contacts and the semiconductor channel made of InAs decreases dramatically with increasing temperature. A shorter InAs channel is needed to create an InAs-based SpinFET which will operate at higher temperatures. Second, we show that the [1 0 0] orientation of the fin is preferable for silicon SpinFETs due to stronger modulation of the conductance as a function of spin-orbit interaction and magnetic field. Short silicon fins can be used for current modulation as a function of the conduction band mismatch between the channel and the ferromagnetic contacts only at relatively low temperatures. In contrast, longer silicon channels allow a TMR modulation at room temperature by changing the strength of the spin-orbit interaction through the gate bias.

Spin transport in intermediate-energy heavy-ion collisions as a probe of in-medium spin–orbit interactions

Energy Technology Data Exchange (ETDEWEB)

Xia, Yin [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Xu, Jun, E-mail: xujun@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Bao-An [Department of Physics and Astronomy, Texas A& M University-Commerce, Commerce, TX 75429-3011 (United States); Department of Applied Physics, Xi' an Jiao Tong University, Xi' an 710049 (China); Shen, Wen-Qing [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

2016-11-15

The spin up-down splitting of collective flows in intermediate-energy heavy-ion collisions as a result of the nuclear spin–orbit interaction is investigated within a spin- and isospin-dependent Boltzmann–Uehling–Uhlenbeck transport model SIBUU12. Using a Skyrme-type spin–orbit coupling quadratic in momentum, we found that the spin splittings of the directed flow and elliptic flow are largest in peripheral Au+Au collisions at beam energies of about 100–200 MeV/nucleon, and the effect is considerable even in smaller systems especially for nucleons with high transverse momenta. The collective flows of light clusters of different spin states are also investigated using an improved dynamical coalescence model with spin. Our study can be important in understanding the properties of in-medium nuclear spin–orbit interactions once the spin-dependent observables proposed in this work can be measured.

Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction

International Nuclear Information System (INIS)

Tian Hong-Yu; Wang Jun

2012-01-01

We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions. The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon. It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived, the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG, while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect, in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations. Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spin-related transport phenomena in HgTe-based quantum well structures

International Nuclear Information System (INIS)

Koenig, Markus

2007-12-01

Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg 0.3 Cd 0.7 Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)

Spin-related transport phenomena in HgTe-based quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Koenig, Markus

2007-12-15

Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg{sub 0.3}Cd{sub 0.7}Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)

Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

Science.gov (United States)

Batley, J. T.; Rosaond, M. C.; Ali, M.; Linfield, E. H.; Burnell, G.; Hickey, B. J.

Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to govern spin-relaxation and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. However, in lateral spin valves, measurements have found that at low temperatures the spin diffusion length unexpectedly decreases. We have fabricated lateral spin valves from Cu with different concentrations of magnetic impurities. Through temperature dependent charge and spin transport measurements we present clear evidence linking the presence of the Kondo effect within Cu to the suppression of the spin diffusion length below 30 K. We have calculated the spin-relaxation rate and isolated the contribution from magnetic impurities. At very low temperatures electron-electron interactions play a more prominent role in the Kondo effect. Well below the Kondo temperature a strong-coupling regime exists, where the moments become screened and the magnetic dephasing rate is reduced. We also investigate the effect of this low temperature regime (>1 K) on a pure spin current. This work shows the dominant role of Kondo scattering, even in low concentrations of order 1 ppm, within pure spin transport.

Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

Science.gov (United States)

Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

2012-11-01

Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

Spin Caloritronic Transport of 1,3,5-Triphenylverdazyl Radical

International Nuclear Information System (INIS)

Wu Qiu-Hua; Zhao Peng; Liu De-Sheng

2016-01-01

We investigate theoretically the spin caloritronic transport properties of a stable 1,3,5-triphenylverdazyl (TPV) radical sandwiched between Au electrodes through different connection fashions. Obvious spin Seebeck effect can be observed in the para-connection fashion. Furthermore, a pure spin current and a completely spin-polarized current can be realized by tuning the gate voltage. Furthermore, a 100% spin polarization without the need of gate voltage can be obtained in the meta-connection fashion. These results demonstrate that TPV radical is a promising material for spin caloritronic and spintronic applications. (paper)

Experimental energy-dependent nuclear spin distributions

International Nuclear Information System (INIS)

Egidy, T. von; Bucurescu, D.

2009-01-01

A new method is proposed to determine the energy-dependent spin distribution in experimental nuclear-level schemes. This method compares various experimental and calculated moments in the energy-spin plane to obtain the spin-cutoff parameter σ as a function of mass A and excitation energy using a total of 7202 levels with spin assignment in 227 nuclei between F and Cf. A simple formula, σ 2 =0.391 A 0.675 (E-0.5Pa ' ) 0.312 , is proposed up to about 10 MeV that is in very good agreement with experimental σ values and is applied to improve the systematics of level-density parameters.

Spin transport in quantum dot embedded in Aharonov-Bohm ring

International Nuclear Information System (INIS)

Wei, J.S.; Wang, R.Z.; Yuan, R.Y.; You, J.Q.; Yan, H.

2005-01-01

Spin polarized transport was studied by employing non-equilibrium Green function method, for a model of quantum dot (QD) embedded in a mesoscopic Aharonov-Bohm (AB) ring with magnetic field applied on QD. In comparison with the situation without magnetic field on QD, the average spin occupations separate with the increase in applied magnetic field on QD; in addition, magnetic field on QD has profound effect on the density of states for different spins in QD; on the other hand, the amplitude and phase of transmission for up spin and down spin were found to present novel effects, such as, the additional peak in the phase of transmission. To understand the spin transport in the system of QD coupled to AB ring, the effects of the two magnetic fields imposed on the QD and penetrating the AB ring should be considered

Spin dependent photon structure functions

International Nuclear Information System (INIS)

Manohar, A.V.; Massachusetts Inst. of Tech., Cambridge

1989-01-01

Spin dependent structure functions of the photon are studied using the operator product expansion. There are new twist-two photon and gluon operators which contribute. The structure functions g 1 and F 3 are calculable in QCD, but differ from their free quark values. The corrections to F 3 are suppressed by 1/log Q 2 . The calculation is an extension of the analysis of Witten for the spin averaged structure functions F 1 and F 2 . (orig.)

Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires; Phasenkohaerenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodraehten

Energy Technology Data Exchange (ETDEWEB)

Estevez Hernandez, Sergio

2009-10-16

Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e{sup 2}/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties

Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.

Science.gov (United States)

Zhu, Zhen-Gang; Berakdar, Jamal

2009-04-08

We investigate the non-equilibrium charge and spin-dependent currents in a quantum ring with a Rashba spin-orbit interaction (SOI) driven by two asymmetric picosecond electromagnetic pulses. The equilibrium persistent charge and persistent spin-dependent currents are investigated as well. It is shown that the dynamical charge and the dynamical spin-dependent currents vary smoothly with a static external magnetic flux and the SOI provides a SU(2) effective flux that changes the phases of the dynamic charge and the dynamic spin-dependent currents. The period of the oscillation of the total charge current with the delay time between the pulses is larger in a quantum ring with a larger radius. The parameters of the pulse fields control to a certain extent the total charge and the total spin-dependent currents. The calculations are applicable to nanometre rings fabricated in heterojunctions of III-V and II-VI semiconductors containing several hundreds of electrons.

Spin transport in oxygen adsorbed graphene nanoribbon

Science.gov (United States)

Kumar, Vipin

2018-04-01

The spin transport properties of pristine graphene nanoribbons (GNRs) have been most widely studied using theoretical and experimental tools. The possibilities of oxidation of fabricated graphene based nano electronic devices may change the device characteristics, which motivates to further explore the properties of graphene oxide nanoribbons (GONRs). Therefore, we present a systematic computational study on the spin polarized transport in surface oxidized GNR in antiferromagnetic (AFM) spin configuration using density functional theory combined with non-equilibrium Green's function (NEGF) method. It is found that the conductance in oxidized GNRs is significantly suppressed in the valance band and the conduction band. A further reduction in the conductance profile is seen in presence of two oxygen atoms on the ribbon plane. This change in the conductance may be attributed to change in the surface topology of the ribbon basal plane due to presence of the oxygen adatoms, where the charge transfer take place between the ribbon basal plane and the oxygen atoms.

Spin transport dynamics of excitons in CdTe/Cd1-xMnxTe quantum wells

International Nuclear Information System (INIS)

Kayanuma, Kentaro; Shirado, Eiji; Debnath, Mukul C.; Souma, Izuru; Chen, Zhanghai; Oka, Yasuo

2001-01-01

Transport properties of spin-polarized excitons were studied in the double quantum well system composed of Cd 0.95 Mn 0.05 Te and CdTe wells. Circular polarization degrees of the time resolved exciton photoluminescence in magnetic field showed that the spin-polarized excitons diffused from the magnetic quantum well and injected to the non-magnetic quantum well by conserving their spins. The spin-polarized excitons injected into the nonmagnetic well reaches 18% of the nonmagnetic well excitons. From the circular polarization degree and the lifetime of the magnetic quantum well excitons, the spin relaxation time of the excitons in the Cd 0.95 Mn 0.05 Te well was determined as 275 - 10 ps depending on the magnetic field strength. [copyright] 2001 American Institute of Physics

Charge transport in 2DEG/s-wave superconductor junction with Dresselhaus-type spin-orbit coupling

International Nuclear Information System (INIS)

Sawa, Y.; Yokoyama, T.; Tanaka, Y.

2007-01-01

We study spin-dependent charge transport in superconducting junctions. We consider ballistic two-dimensional electron gas (2DEG)/s-wave superconductor junctions with Dresselhaus-type spin-orbit coupling (DSOC). We calculate the conductance normalized by that in the normal state of superconductor in order to study the effect of DSOC in 2DEG on conductance, changing the height of insulating barrier. We find the DSOC suppresses the conductance for low insulating barrier, while it can slightly enhance the conductance for high insulating barrier. It has a reentrant dependence on DSOC for middle strength insulating barrier. The effect of DSOC is weaken as the insulating barrier becomes high

Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

Science.gov (United States)

Yin, Li; Wang, Xiaocha; Mi, Wenbo

2018-01-01

Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.

Spin Filters as High-Performance Spin Polarimeters

International Nuclear Information System (INIS)

Rougemaille, N.; Lampel, G.; Peretti, J.; Drouhin, H.-J.; Lassailly, Y.; Filipe, A.; Wirth, T.; Schuhl, A.

2003-01-01

A spin-dependent transport experiment in which hot electrons pass through a ferromagnetic metal / semiconductor Schottky diode has been performed. A spin-polarized free-electron beam, emitted in vacuum from a GaAs photocathode, is injected into the thin metal layer with an energy between 5 and 1000 eV above to the Fermi level. The transmitted current collected in the semiconductor substrate increases with injection energy because of secondary - electron multiplication. The spin-dependent part of the transmitted current is first constant up to about 100 eV and then increases by 4 orders of magnitude. As an immediate application, the solid-state hybrid structure studied here leads to a very efficient and compact device for spin polarization detection

Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well

Science.gov (United States)

Anghel, S.; Passmann, F.; Singh, A.; Ruppert, C.; Poshakinskiy, A. V.; Tarasenko, S. A.; Moore, J. N.; Yusa, G.; Mano, T.; Noda, T.; Li, X.; Bristow, A. D.; Betz, M.

2018-03-01

Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λSOI is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λSOI through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λSOI and diffusion coefficient.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.

2017-12-08

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

2017-01-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Modeling spin magnetization transport in a spatially varying magnetic field

Energy Technology Data Exchange (ETDEWEB)

Picone, Rico A.R., E-mail: rpicone@stmartin.edu [Department of Mechanical Engineering, University of Washington, Seattle (United States); Garbini, Joseph L. [Department of Mechanical Engineering, University of Washington, Seattle (United States); Sidles, John A. [Department of Orthopædics, University of Washington, Seattle (United States)

2015-01-15

We present a framework for modeling the transport of any number of globally conserved quantities in any spatial configuration and apply it to obtain a model of magnetization transport for spin-systems that is valid in new regimes (including high-polarization). The framework allows an entropy function to define a model that explicitly respects the laws of thermodynamics. Three facets of the model are explored. First, it is expressed as nonlinear partial differential equations that are valid for the new regime of high dipole-energy and polarization. Second, the nonlinear model is explored in the limit of low dipole-energy (semi-linear), from which is derived a physical parameter characterizing separative magnetization transport (SMT). It is shown that the necessary and sufficient condition for SMT to occur is that the parameter is spatially inhomogeneous. Third, the high spin-temperature (linear) limit is shown to be equivalent to the model of nuclear spin transport of Genack and Redfield (1975) [1]. Differences among the three forms of the model are illustrated by numerical solution with parameters corresponding to a magnetic resonance force microscopy (MRFM) experiment (Degen et al., 2009 [2]; Kuehn et al., 2008 [3]; Sidles et al., 2003 [4]; Dougherty et al., 2000 [5]). A family of analytic, steady-state solutions to the nonlinear equation is derived and shown to be the spin-temperature analog of the Langevin paramagnetic equation and Curie's law. Finally, we analyze the separative quality of magnetization transport, and a steady-state solution for the magnetization is shown to be compatible with Fenske's separative mass transport equation (Fenske, 1932 [6]). - Highlights: • A framework for modeling the transport of conserved magnetic and thermodynamic quantities in any spatial configuration. • A thermodynamically grounded model of spin magnetization transport valid in new regimes, including high-polarization. • Analysis of the separative quality of

Modeling spin magnetization transport in a spatially varying magnetic field

International Nuclear Information System (INIS)

Picone, Rico A.R.; Garbini, Joseph L.; Sidles, John A.

2015-01-01

We present a framework for modeling the transport of any number of globally conserved quantities in any spatial configuration and apply it to obtain a model of magnetization transport for spin-systems that is valid in new regimes (including high-polarization). The framework allows an entropy function to define a model that explicitly respects the laws of thermodynamics. Three facets of the model are explored. First, it is expressed as nonlinear partial differential equations that are valid for the new regime of high dipole-energy and polarization. Second, the nonlinear model is explored in the limit of low dipole-energy (semi-linear), from which is derived a physical parameter characterizing separative magnetization transport (SMT). It is shown that the necessary and sufficient condition for SMT to occur is that the parameter is spatially inhomogeneous. Third, the high spin-temperature (linear) limit is shown to be equivalent to the model of nuclear spin transport of Genack and Redfield (1975) [1]. Differences among the three forms of the model are illustrated by numerical solution with parameters corresponding to a magnetic resonance force microscopy (MRFM) experiment (Degen et al., 2009 [2]; Kuehn et al., 2008 [3]; Sidles et al., 2003 [4]; Dougherty et al., 2000 [5]). A family of analytic, steady-state solutions to the nonlinear equation is derived and shown to be the spin-temperature analog of the Langevin paramagnetic equation and Curie's law. Finally, we analyze the separative quality of magnetization transport, and a steady-state solution for the magnetization is shown to be compatible with Fenske's separative mass transport equation (Fenske, 1932 [6]). - Highlights: • A framework for modeling the transport of conserved magnetic and thermodynamic quantities in any spatial configuration. • A thermodynamically grounded model of spin magnetization transport valid in new regimes, including high-polarization. • Analysis of the separative quality of

On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

Directory of Open Access Journals (Sweden)

A.A. Baker

Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

Bulk and edge spin transport in topological magnon insulators

NARCIS (Netherlands)

Rückriegel, A.; Brataas, A.; Duine, R.A.

2018-01-01

We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin

Spin-polarized quantum transport properties through flexible phosphorene

Science.gov (United States)

Chen, Mingyan; Yu, Zhizhou; Xie, Yiqun; Wang, Yin

2016-10-01

We report a first-principles study on the tunnel magnetoresistance (TMR) and spin-injection efficiency (SIE) through phosphorene with nickel electrodes under the mechanical tension and bending on the phosphorene region. Both the TMR and SIE are largely improved under these mechanical deformations. For the uniaxial tension (ɛy) varying from 0% to 15% applied along the armchair transport (y-)direction of the phosphorene, the TMR ratio is enhanced with a maximum of 107% at ɛy = 10%, while the SIE increases monotonously from 8% up to 43% with the increasing of the strain. Under the out-of-plane bending, the TMR overall increases from 7% to 50% within the bending ratio of 0%-3.9%, and meanwhile the SIE is largely improved to around 70%, as compared to that (30%) of the flat phosphorene. Such behaviors of the TMR and SIE are mainly affected by the transmission of spin-up electrons in the parallel configuration, which is highly dependent on the applied mechanical tension and bending. Our results indicate that the phosphorene based tunnel junctions have promising applications in flexible electronics.

Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

International Nuclear Information System (INIS)

Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

2014-01-01

We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

Comparative Aspects of Spin-Dependent Interaction Potentials for Spin-1/2 and Spin-1 Matter Fields

Directory of Open Access Journals (Sweden)

P. C. Malta

2016-01-01

Full Text Available This paper sets out to establish a comparative study between classes of spin- and velocity-dependent potentials for spin-1/2 and spin-1 matter currents/sources in the nonrelativistic regime. Both (neutral massive scalar and vector particles are considered to mediate the interactions between (pseudo-scalar sources or (pseudo-vector currents. Though our discussion is more general, we contemplate specific cases in which our results may describe the electromagnetic interaction with a massive (Proca-type photon exchanged between two spin-1/2 or two spin-1 carriers. We highlight the similarities and peculiarities of the potentials for the two different types of charged matter and also focus our attention on the comparison between the particular aspects of two different field representations for spin-1 matter particles. We believe that our results may contribute to a further discussion of the relation between charge, spin, and extensibility of elementary particles.

Valley and spin thermoelectric transport in ferromagnetic silicene junctions

International Nuclear Information System (INIS)

Ping Niu, Zhi; Dong, Shihao

2014-01-01

We have investigated the valley and spin resolved thermoelectric transport in a normal/ferromagnetic/normal silicene junction. Due to the coupling between the valley and spin degrees of freedom, thermally induced pure valley and spin currents can be demonstrated. The magnitude and sign of these currents can be manipulated by adjusting the ferromagnetic exchange field and local external electric field, thus the currents are controllable. We also find fully valley and/or spin polarized currents. Similar to the currents, owing to the band structure symmetry, tunable pure spin and/or valley thermopowers with zero charge counterpart are generated. The results obtained here suggest a feasible way of generating a pure valley (spin) current and thermopower in silicene

Time-resolved lateral spin-caloric transport of optically generated spin packets in n-GaAs

Science.gov (United States)

Göbbels, Stefan; Güntherodt, Gernot; Beschoten, Bernd

2018-05-01

We report on lateral spin-caloric transport (LSCT) of electron spin packets which are optically generated by ps laser pulses in the non-magnetic semiconductor n-GaAs at K. LSCT is driven by a local temperature gradient induced by an additional cw heating laser. The spatio-temporal evolution of the spin packets is probed using time-resolved Faraday rotation. We demonstrate that the local temperature-gradient induced spin diffusion is solely driven by a non-equilibrium hot spin distribution, i.e. without involvement of phonon drag effects. Additional electric field-driven spin drift experiments are used to verify directly the validity of the non-classical Einstein relation for moderately doped semiconductors at low temperatures for near band-gap excitation.

Spin-dependent electron many-body effects in GaAs

Science.gov (United States)

Nemec, P.; Kerachian, Y.; van Driel, H. M.; Smirl, Arthur L.

2005-12-01

Time- and polarization-resolved differential transmission measurements employing same and oppositely circularly polarized 150fs optical pulses are used to investigate spin characteristics of conduction band electrons in bulk GaAs at 295K . Electrons and holes with densities in the 2×1016cm-3-1018cm-3 range are generated and probed with pulses whose center wavelength is between 865 and 775nm . The transmissivity results can be explained in terms of the spin sensitivity of both phase-space filling and many-body effects (band-gap renormalization and screening of the Coulomb enhancement factor). For excitation and probing at 865nm , just above the band-gap edge, the transmissivity changes mainly reflect spin-dependent phase-space filling which is dominated by the electron Fermi factors. However, for 775nm probing, the influence of many-body effects on the induced transmission change are comparable with those from reduced phase space filling, exposing the spin dependence of the many-body effects. If one does not take account of these spin-dependent effects one can misinterpret both the magnitude and time evolution of the electron spin polarization. For suitable measurements we find that the electron spin relaxation time is 130ps .

Position dependent spin wave spectrum in nanostrip magnonic waveguides

International Nuclear Information System (INIS)

Wang, Qi; Zhang, Huaiwu; Ma, Guokun; Liao, Yulong; Zhong, Zhiyong; Zheng, Yun

2014-01-01

The dispersion curves of propagating spin wave along different positions in nanostrip magnonic waveguides were studied by micromagnetic simulation. The results show that the modes of spin wave in the nanostrip magnonic waveguide are dependent on the position and the weak even modes of spin wave are excited even by symmetric excitation fields in a nanostrip magnonic waveguide. The reasons of the position dependent dispersion curve are explained by associating with geometrical confinement in the nanostrip magnonic waveguide

Towards a Room-Temperature Spin Quantum Bus in Diamond via Electron Photoionization, Transport, and Capture

Directory of Open Access Journals (Sweden)

M. W. Doherty

2016-11-01

Full Text Available Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy center in diamond has been used to realize small-scale quantum information processing and quantum sensing under ambient conditions. A major barrier in the development of large-scale quantum information processing in diamond is the connection of nitrogen-vacancy spin registers by a quantum bus at room temperature. Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution. Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods. Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to photoionize, transport, and capture spin-polarized electrons in diamond at room temperature. Having identified these mechanisms, we explore how they may be combined to realize an on-chip spin quantum bus.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-01-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

Low-temperature spin transport in a S = 1 one-dimensional antiferromagnet

International Nuclear Information System (INIS)

Pires, A S T; Lima, L S

2009-01-01

We study spin transport in the insulating antiferromagnet with S = 1 in one dimension. The spin conductivity is calculated, at zero temperature, using a modified spin wave theory and the Kubo formalism, within the ladder approximation. Two-magnon processes provide the dominant contribution to the spin conductivity. At finite temperature, free magnons are activated, and turn the system into a perfect spin conductor, i.e., the spin conductivity has a Drude form with infinite scattering time.

Moments of nucleon spin-dependent generalized parton distributions

International Nuclear Information System (INIS)

Schroers, W.; Brower, R.C.; Dreher, P.; Edwards, R.; Fleming, G.; Haegler, Ph.; Heller, U.M.; Lippert, Th.; Negele, J.W.; Pochinsky, A.V.; Renner, D.B.; Richards, D.; Schilling, K.

2004-01-01

We present a lattice measurement of the first two moments of the spin-dependent GPD H∼(x, ξ, t). From these we obtain the axial coupling constant and the second moment of the spin-dependent forward parton distribution. The measurements are done in full QCD using Wilson fermions. In addition, we also present results from a first exploratory study of full QCD using Asqtad sea and domain-wall valence fermions

Modeling spin magnetization transport in a spatially varying magnetic field

Science.gov (United States)

Picone, Rico A. R.; Garbini, Joseph L.; Sidles, John A.

2015-01-01

We present a framework for modeling the transport of any number of globally conserved quantities in any spatial configuration and apply it to obtain a model of magnetization transport for spin-systems that is valid in new regimes (including high-polarization). The framework allows an entropy function to define a model that explicitly respects the laws of thermodynamics. Three facets of the model are explored. First, it is expressed as nonlinear partial differential equations that are valid for the new regime of high dipole-energy and polarization. Second, the nonlinear model is explored in the limit of low dipole-energy (semi-linear), from which is derived a physical parameter characterizing separative magnetization transport (SMT). It is shown that the necessary and sufficient condition for SMT to occur is that the parameter is spatially inhomogeneous. Third, the high spin-temperature (linear) limit is shown to be equivalent to the model of nuclear spin transport of Genack and Redfield (1975) [1]. Differences among the three forms of the model are illustrated by numerical solution with parameters corresponding to a magnetic resonance force microscopy (MRFM) experiment (Degen et al., 2009 [2]; Kuehn et al., 2008 [3]; Sidles et al., 2003 [4]; Dougherty et al., 2000 [5]). A family of analytic, steady-state solutions to the nonlinear equation is derived and shown to be the spin-temperature analog of the Langevin paramagnetic equation and Curie's law. Finally, we analyze the separative quality of magnetization transport, and a steady-state solution for the magnetization is shown to be compatible with Fenske's separative mass transport equation (Fenske, 1932 [6]).

Spin transport and spin torque in antiferromagnetic devices

Science.gov (United States)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Resonance induced spin-selective transport behavior in carbon nanoribbon/nanotube/nanoribbon heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiang-Hua [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Department of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411101 (China); Wang, Ling-Ling, E-mail: llwang@hnu.edu.cn [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Li, Xiao-Fei, E-mail: xf.li@uestc.edu.cn [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Chen, Tong; Li, Quan [School of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China)

2015-09-04

Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) are attractive in spintronics. Here, we propose GNR/CNT/GNR heterojunctions constructed by attaching zigzag-GNRs at the side-wall of CNT for spintronic devices. The thermal stability and electronic transport properties were explored using ab initio molecular dynamics simulations and nonequilibrium Green's function methods, respectively. Results demonstrate that the sp{sup 3}-hybridized contacts formed at the interface assure a good thermal stability of the system and make the CNT to be regarded as resonator. Only the electron of one spin-orientation and resonant energy is allowed to transport, resulting in the remarkable spin-selective transport behavior at the ferromagnetic state. - Highlights: • The new mechanism for spin-selective transport in molecular junction is proposed. • The two sp{sup 3} contacts formed between CNT and GNR can be regarded as electronic isolators. • The two isolators make the CNT act as a resonator. • Only the electron of one spin-orientation and resonant energy can form standing wave and transport through the whole junction.

Spin-dependent heat and thermoelectric currents in a Rashba ring coupled to a photon cavity

Science.gov (United States)

Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar

2018-01-01

Spin-dependent heat and thermoelectric currents in a quantum ring with Rashba spin-orbit interaction placed in a photon cavity are theoretically calculated. The quantum ring is coupled to two external leads with different temperatures. In a resonant regime, with the ring structure in resonance with the photon field, the heat and the thermoelectric currents can be controlled by the Rashba spin-orbit interaction. The heat current is suppressed in the presence of the photon field due to contribution of the two-electron and photon replica states to the transport while the thermoelectric current is not sensitive to changes in parameters of the photon field. Our study opens a possibility to use the proposed interferometric device as a tunable heat current generator in the cavity photon field.

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

Science.gov (United States)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

Coherent spin transport through a 350 micron thick silicon wafer.

Science.gov (United States)

Huang, Biqin; Monsma, Douwe J; Appelbaum, Ian

2007-10-26

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

Spin-dependent transport in cobalt nanocontacts

Energy Technology Data Exchange (ETDEWEB)

Sarau, G.

2007-04-16

The magnetoresistance response of cobalt nanocontacts with varying geometries formed between two extended electrodes has been experimentally investigated and linked to micromagnetic simulations. The contribution of the nanoconstriction to the measured magnetoresistance signal has been separated from that of the electrode bulk. The different nanocontact geometries exhibit different shape anisotropies resulting in a characteristic behavior of the magnetization at each nanocontact. The magnetization reversal processes are explained on the basis of the anisotropic magnetoresistance and domain wall scattering effects. The domain wall resistance takes positive values, which is in agreement with models based on the spin mistracking inside the domain wall. The 4 K MR measurements are found to be influenced by the exchange bias effect between the ferromagnetic cobalt electrodes and the antiferromagnetic oxidized Co surface. When cooling down in an applied magnetic field, the uniform biased Co layer behaves as if it possesses a unidirectional anisotropy axis along the field cooling direction. In the zero field cooling case, the exchange bias varies locally throughout the sample giving rise to non-reproducible successive MR traces. (orig.)

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-11-17

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained.

Spin-Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene

Science.gov (United States)

2017-11-09

Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene Report Term: 0-Other Email ...Principal: Y Name: Jay A Gupta Email : gupta.208@osu.edu Name: Roland K Kawakami Email : kawakami.15@osu.edu RPPR Final Report as of 13-Nov-2017...studies on films and devices. Optimization of the Cr tip will be the next important step to establish this technique. We are writing up these early

Measuring spin-dependent structure functions at CEBAF

International Nuclear Information System (INIS)

Schaefer, A.

1994-01-01

The author analyses whether CEBAF with a 10 GeV beam could contribute significantly to the understanding of spin-dependent deep-inelastic scattering as well as semi-inclusive reactions. The main advantage of CEBAF is the much better attainable statistics, its great disadvantage its comparably low energy, which limits the accessible x-range to about 0.15 to 0.7. Within these constraints CEBAF could provide (1) high precision data which would be very valuable to understand the Q 2 dependence of the spin-dependent structure functions g 1 (x) and G 2 (x) and (2) the by far most precise determination of the third moments of g 1 (x) and g 2 (x) the latter of which the author argues to be related to a fundamental property of the nucleon

Analytical approaches to the determination of spin-dependent parton distribution functions at NNLO approximation

Science.gov (United States)

Salajegheh, Maral; Nejad, S. Mohammad Moosavi; Khanpour, Hamzeh; Tehrani, S. Atashbar

2018-05-01

In this paper, we present SMKA18 analysis, which is a first attempt to extract the set of next-to-next-leading-order (NNLO) spin-dependent parton distribution functions (spin-dependent PDFs) and their uncertainties determined through the Laplace transform technique and Jacobi polynomial approach. Using the Laplace transformations, we present an analytical solution for the spin-dependent Dokshitzer-Gribov-Lipatov-Altarelli-Parisi evolution equations at NNLO approximation. The results are extracted using a wide range of proton g1p(x ,Q2) , neutron g1n(x ,Q2) , and deuteron g1d(x ,Q2) spin-dependent structure functions data set including the most recent high-precision measurements from COMPASS16 experiments at CERN, which are playing an increasingly important role in global spin-dependent fits. The careful estimations of uncertainties have been done using the standard Hessian error propagation. We will compare our results with the available spin-dependent inclusive deep inelastic scattering data set and other results for the spin-dependent PDFs in literature. The results obtained for the spin-dependent PDFs as well as spin-dependent structure functions are clearly explained both in the small and large values of x .

Spin-dependent potentials from lattice QCD

International Nuclear Information System (INIS)

Koma, Y.

2006-09-01

The spin-dependent corrections to the static inter-quark potential are phenomenologically relevant to describing the fine and hyperfine spin splitting of the heavy quarkonium spectra. We investigate these corrections, which are represented as the field strength correlators on the quark-antiquark source, in SU(3) lattice gauge theory. We use the Polyakov loop correlation function as the quark-antiquark source, and by employing the multi-level algorithm, we obtain remarkably clean signals for these corrections up to intermediate distances of around 0.6 fm. Our observation suggests several new features of the corrections. (orig.)

Quantum Spin Transport in Mesoscopic Interferometer

Directory of Open Access Journals (Sweden)

Zein W. A.

2007-10-01

Full Text Available Spin-dependent conductance of ballistic mesoscopic interferometer is investigated. The quantum interferometer is in the form of ring, in which a quantum dot is embedded in one arm. This quantum dot is connected to one lead via tunnel barrier. Both Aharonov- Casher and Aharonov-Bohm e ects are studied. Our results confirm the interplay of spin-orbit coupling and quantum interference e ects in such confined quantum systems. This investigation is valuable for spintronics application, for example, quantum information processing.

Electrical detection of spin transport in Si two-dimensional electron gas systems

Science.gov (United States)

Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

2016-09-01

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Graphene: A membrane with steadily improving charge and spin transport properties

Science.gov (United States)

Beschoten, Bernd

Long electron spin lifetimes are an important prerequisite for enabling advanced spintronic devices. In this respect the 1-ns benchmark is of high technological interest as it marks the threshold at which manipulation of spins with electrical high frequency technology becomes feasible (1 ns 1 GHz). For a long time, the measured spin lifetimes were shorter than 1 ns. Here we report on a major improvement in device fabrication which pushes the spin lifetimes to 12.6 ns in single layer graphene spin transport devices at room temperature which results in spin diffusion lengths as long as 30.5 μm. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO2 substrate and the subsequent dry transfer of a graphene/hexagonal boron nitride (hBN) stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingress of solvents along the hBN-to-substrate interface. We demonstrate that the spin lifetime does not depend on the contact resistance area products in these devices, indicating that spin absorption at the contacts is not the predominant source for spin dephasing which may pave the way towards probing intrinsic spin properties of graphene. In the second part, we summarize our effort to replace natural by synthetically grown graphene. We report on an advanced transfer technique that allows both reusing the copper substrate of the CVD graphene growth process and making devices with carrier mobilities as high as three million cm2/(Vs) thus rivaling exfoliated ''natural'' graphene. This material quality allows truly ballistic experiments with electron mean free paths exceeding 28 μm which brings novel electron-optic devices into reach. In collaboration with M. Drögeler, C. Franzen, F. Volmer, L. Banszerus, M. Schmitz, S. Engels, J. Dauber, M. Goldsche, M. Oellers, T. Pohlmann, M. Wolter, F. Haupt, K. Watanabe, T. Taniguchi, and C. Stampfer.

Measurement of the spin dependent structure functions of proton and neutron

International Nuclear Information System (INIS)

Rith, K.

1989-01-01

Recent results from the EMC experiment on the spin dependent structure function g 1 p (x) of the proton are discussed. They suggest that the nucleon spin does not originate from quark spins but rather from angular orbital momentum and gluon contributions. A proposed experiment at HERA is presented which will allow a very accurate measurement of the spin dependent structure functions and their integrals of both proton and neutron and a precise test of the Bjorken sum rule. (orig.)

Tailoring spin-orbit torque in diluted magnetic semiconductors

KAUST Repository

Li, Hang; Wang, Xuhui; Doǧan, Fatih; Manchon, Aurelien

2013-01-01

We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

Tailoring spin-orbit torque in diluted magnetic semiconductors

KAUST Repository

Li, Hang

2013-05-16

We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

Monte Carlo determination of the spin-dependent potentials

International Nuclear Information System (INIS)

Campostrini, M.; Moriarty, K.J.M.; Rebbi, C.

1987-05-01

Calculation of the bound states of heavy quark systems by a Hamiltonian formulation based on an expansion of the interaction into inverse powers of the quark mass is discussed. The potentials for the spin-orbit and spin-spin coupling between quark and antiquark, which are responsible for the fine and hyperfine splittings in heavy quark spectroscopy, are expressed as expectation values of Wilson loop factors with suitable insertions of chromomagnetic or chromoelectric fields. A Monte Carlo simulation has been used to evaluate the expectation values and, from them, the spin-dependent potentials. The Monte Carlo calculation is reported to show a long-range, non-perturbative component in the interaction

Inter-dependence not Over-dependence: Reducing Urban Transport Energy Dependence

Energy Technology Data Exchange (ETDEWEB)

Saunders, Michael James; Rodrigues da Silva, Antonio Nelson

2007-07-01

A major issue of concern in today's world is urban transport energy dependence and energy supply security. In an energy inter-dependent world, energy over-dependence brings risks to urban transport systems. Many urban areas are over-dependent on finite petroleum resources for transport. New technology and the development and integration of renewable resources into transport energy systems may reduce some of the current transport energy dependence of urban areas. However, the most effective means of reducing energy dependence is to first design urban areas for this condition. An urban policy framework is proposed that requires transport energy dependence to be measured and controlled in the urban development process. A new tool has been created for this purpose, the Transport Energy Specification (TES), which measures transport energy dependence of urban areas. This creates the possibility for cities to regulate urban development with respect to energy dependence. Trial assessments were performed in Germany, New Zealand and Brazil; initial analysis by transport and government professionals shows promise of this tool being included into urban policy. The TES combined with a regulatory framework has the potential to significantly reduce transport energy consumption and dependence in urban areas in the future. (auth)

Measuring spin-dependent structure functions at CEBAF

Energy Technology Data Exchange (ETDEWEB)

Schaefer, A. [Universitaet Frankfurt (Germany)

1994-04-01

The author analyses whether CEBAF with a 10 GeV beam could contribute significantly to the understanding of spin-dependent deep-inelastic scattering as well as semi-inclusive reactions. The main advantage of CEBAF is the much better attainable statistics, its great disadvantage its comparably low energy, which limits the accessible x-range to about 0.15 to 0.7. Within these constraints CEBAF could provide (1) high precision data which would be very valuable to understand the Q{sup 2} dependence of the spin-dependent structure functions g{sub 1}(x) and G{sub 2}(x) and (2) the by far most precise determination of the third moments of g{sub 1}(x) and g{sub 2}(x) the latter of which the author argues to be related to a fundamental property of the nucleon.

Constraints on Exotic Spin-Dependent Interactions Between Matter and Antimatter from Antiprotonic Helium Spectroscopy

Science.gov (United States)

Ficek, Filip; Fadeev, Pavel; Flambaum, Victor V.; Jackson Kimball, Derek F.; Kozlov, Mikhail G.; Stadnik, Yevgeny V.; Budker, Dmitry

2018-05-01

Heretofore undiscovered spin-0 or spin-1 bosons can mediate exotic spin-dependent interactions between standard model particles. Here, we carry out the first search for semileptonic spin-dependent interactions between matter and antimatter. We compare theoretical calculations and spectroscopic measurements of the hyperfine structure of antiprotonic helium to constrain exotic spin- and velocity-dependent interactions between electrons and antiprotons.

Spin caloritronics, origin and outlook

International Nuclear Information System (INIS)

Yu, Haiming; Brechet, Sylvain D.; Ansermet, Jean-Philippe

2017-01-01

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Spin caloritronics, origin and outlook

Energy Technology Data Exchange (ETDEWEB)

Yu, Haiming, E-mail: haiming.yu@buaa.edu.cn [Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University (China); Brechet, Sylvain D. [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland); Ansermet, Jean-Philippe, E-mail: jean-philippe.ansermet@epfl.ch [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland)

2017-03-03

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Spin-dependent tunneling recombination in heterostructures with a magnetic layer

Energy Technology Data Exchange (ETDEWEB)

Denisov, K. S., E-mail: denisokonstantin@gmail.com; Rozhansky, I. V.; Averkiev, N. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lähderanta, E. [Lappeenranta University of Technology (Finland)

2017-01-15

We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.

Spin dependent disorder in a junction device with spin orbit couplings

International Nuclear Information System (INIS)

Ganguly, Sudin; Basu, Saurabh

2016-01-01

Using the multi-probe Landauer-BUttiker formula and Green's function approach, we calculate the longitudinal conductance (LC) and spin Hall conductance (SHC) numerically in a two-dimensional junction system with the Rashba and Dresselhaus spin orbit coupling (SOC) and spin dependent disorder (SDD) in presence of both random onsite and hopping disorder strengths. It has been found that when the strengths of the RSOC and DSOC are same, the SHC vanishes. Further in presence of random onsite or hopping disorder, the SHC is still zero when the strengths of the two types of SOC, that is Rashba and Dressselhaus are the same. This indicates that the cancellation of SHC is robust even in the presence of random disorder. Only with the inclusion of SDD (onsite or hopping), a non-zero SHC is found and it increases as the strength of SDD increases. The physical implication of the existence of a non-zero SHC has been explored in this work. Finally, we have compared the effect of onsite SDD and hopping SDD on both longitudinal and spin Hall conductances. (paper)

Observation of the spin Nernst effect

Science.gov (United States)

Meyer, S.; Chen, Y.-T.; Wimmer, S.; Althammer, M.; Wimmer, T.; Schlitz, R.; Geprägs, S.; Huebl, H.; Ködderitzsch, D.; Ebert, H.; Bauer, G. E. W.; Gross, R.; Goennenwein, S. T. B.

2017-10-01

The observation of the spin Hall effect triggered intense research on pure spin current transport. With the spin Hall effect, the spin Seebeck effect and the spin Peltier effect already observed, our picture of pure spin current transport is almost complete. The only missing piece is the spin Nernst (-Ettingshausen) effect, which so far has been discussed only on theoretical grounds. Here, we report the observation of the spin Nernst effect. By applying a longitudinal temperature gradient, we generate a pure transverse spin current in a Pt thin film. For readout, we exploit the magnetization-orientation-dependent spin transfer to an adjacent yttrium iron garnet layer, converting the spin Nernst current in Pt into a controlled change of the longitudinal and transverse thermopower voltage. Our experiments show that the spin Nernst and the spin Hall effect in Pt are of comparable magnitude, but differ in sign, as corroborated by first-principles calculations.

The effects of Rashba spin-orbit coupling on spin-polarized transport in hexagonal graphene nano-rings and flakes

Science.gov (United States)

Laghaei, M.; Heidari Semiromi, E.

2018-03-01

Quantum transport properties and spin polarization in hexagonal graphene nanostructures with zigzag edges and different sizes were investigated in the presence of Rashba spin-orbit interaction (RSOI). The nanostructure was considered as a channel to which two semi-infinite armchair graphene nanoribbons were coupled as input and output leads. Spin transmission and spin polarization in x, y, and z directions were calculated through applying Landauer-Buttiker formalism with tight binding model and the Green's function to the system. In these quantum structures it is shown that changing the size of system, induce and control the spin polarized currents. In short, these graphene systems are typical candidates for electrical spintronic devices as spin filtering.

Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2012-01-01

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

Measurement of electron-spin transports in GaAs quantum wells using a transmission-grating-sampled circular dichroism absorption spectroscopy

International Nuclear Information System (INIS)

Yu, Hua-Liang; Fang, Shaoyin; Wen, Jinhui; Lai, Tianshu

2014-01-01

A transmission-grating-sampled circular dichroism absorption spectroscopy (TGS-CDAS) and its theoretical model are developed sensitively to measure decay dynamics of a transient spin grating (TSG). A binary transmission grating with the same period as TSG is set behind TSG. It allows only a same small part of each period in TSG measured by circular dichroism absorption effect of a probe. In this way, the zero average of spin-dependent effects measured over a whole period in TSG is avoided so that TGS-CDAS has a high sensitivity to spin evolution in TSG. Spin transport experiments are performed on GaAs/AlGaAs quantum wells. Experimental results prove the feasibility and reliability of TGS-CDAS

Vibration dependence of the tensor spin-spin and scalar spin-spin hyperfine interactions by precision measurement of hyperfine structures of 127I2 near 532 nm

International Nuclear Information System (INIS)

Hong Fenglei; Zhang Yun; Ishikawa, Jun; Onae, Atsushi; Matsumoto, Hirokazu

2002-01-01

Hyperfine structures of the R(87)33-0, R(145)37-0, and P(132)36-0 transitions of molecular iodine near 532 nm are measured by observing the heterodyne beat-note signal of two I 2 -stabilized lasers, whose frequencies are bridged by an optical frequency comb generator. The measured hyperfine splittings are fit to a four-term Hamiltonian, which includes the electric quadrupole, spin-rotation, tensor spin-spin, and scalar spin-spin interactions, with an accuracy of ∼720 Hz. High-accurate hyperfine constants are obtained from this fit. Vibration dependences of the tensor spin-spin and scalar spin-spin hyperfine constants are determined for molecular iodine, for the first time to our knowledge. The observed hyperfine transitions are good optical frequency references in the 532-nm region

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

Science.gov (United States)

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Nonequilibrium spin transport in integrable spin chains: Persistent currents and emergence of magnetic domains

Science.gov (United States)

De Luca, Andrea; Collura, Mario; De Nardis, Jacopo

2017-07-01

We construct exact steady states of unitary nonequilibrium time evolution in the gapless XXZ spin-1/2 chain where integrability preserves ballistic spin transport at long times. We characterize the quasilocal conserved quantities responsible for this feature and introduce a computationally effective way to evaluate their expectation values on generic matrix product initial states. We employ this approach to reproduce the long-time limit of local observables in all quantum quenches which explicitly break particle-hole or time-reversal symmetry. We focus on a class of initial states supporting persistent spin currents and our predictions remarkably agree with numerical simulations at long times. Furthermore, we propose a protocol for this model where interactions, even when antiferromagnetic, are responsible for the unbounded growth of a macroscopic magnetic domain.

Interplay between the Dzyaloshinskii-Moriya term and external fields on spin transport in the spin-1/2 one-dimensional antiferromagnet

Science.gov (United States)

Lima, L. S.

2018-05-01

We study the effect of the uniform Dzyaloshinskii-Moriya interaction (symmetric exchange anisotropy) and arbitrary oriented external magnetic fields on spin conductivity in the spin-1/2 one-dimensional Heisenberg antiferromagnet. The spin conductivity is calculated employing abelian bosonization and the Kubo formalism of transport. We investigate the influence of three competing phases at zero-temperature, (Néel phase, dimerized phase and gapless Luttinger liquid phase) on the AC spin conductivity.

Nonlocal magnon spin transport in NiFe2O4 thin films

NARCIS (Netherlands)

Shan, Juan; Bougiatioti, P; Liang, Lei; Reiss, G; Kuschel, Timo; van Wees, Bart

2017-01-01

We report magnon spin transport in nickel ferrite(NiFe2O4, NFO)/platinum (Pt) bilayer systems at room temperature. A nonlocal geometry is employed, where the magnons are excited by the spin Hall effect or by the Joule heating induced spin Seebeck effect at the Pt injector and detected at a certain

Spin currents in metallic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz Dominik

2011-09-05

A pure spin current, i.e., a flow of angular momentum without accompanying net charge current, is a key ingredient in the field of spintronics. In this thesis, we experimentally investigated two different concepts for pure spin current sources suggested by theory. The first is based on a time-dependent magnetization precession which ''pumps'' a pure spin current into an adjacent non-magnetic conductor. Our experiments quantitatively corroborated important predictions expected theoretically for this approach, including the dependence of the spin current on the sample geometry and the microwave power. Even more important, we could show for the first time that the spin pumping concept is viable in a large variety of ferromagnetic materials and that it only depends on the magnetization damping. Therefore, our experiments established spin pumping as generic phenomenon and demonstrated that it is a powerful way to generate pure spin currents. The second theoretical concept is based on the conversion of charge currents into spin currents in non-magnetic nanostructures via the spin Hall effect. We experimentally investigated this approach in H-shaped, metallic nanodevices, and found that the predictions are linked to requirements not realizable with the present experimental techniques, neither in sample fabrication nor in measurement technique. Indeed, our experimental data could be consistently understood by a spin-independent transport model describing the transition from diffusive to ballistic transport. In addition, the implementation of advanced fabrication and measurement techniques allowed to discover a new non-local phenomenon, the non-local anisotropic magnetoresistance. Finally, we also studied spin-polarized supercurrents carried by spin-triplet Cooper pairs. We found that low resistance interfaces are a key requirement for further experiments in this direction. (orig.)

GOLLUM: a next-generation simulation tool for electron, thermal and spin transport

International Nuclear Information System (INIS)

Ferrer, J; García-Suárez, V M; Rodríguez-Ferradás, R; Lambert, C J; Manrique, D Zs; Visontai, D; Grace, I; Bailey, S W D; Gillemot, K; Sadeghi, Hatef; Algharagholy, L A; Oroszlany, L

2014-01-01

We have developed an efficient simulation tool ‘GOLLUM’ for the computation of electrical, spin and thermal transport characteristics of complex nanostructures. The new multi-scale, multi-terminal tool addresses a number of new challenges and functionalities that have emerged in nanoscale-scale transport over the past few years. To illustrate the flexibility and functionality of GOLLUM, we present a range of demonstrator calculations encompassing charge, spin and thermal transport, corrections to density functional theory such as local density approximation +U (LDA+U) and spectral adjustments, transport in the presence of non-collinear magnetism, the quantum Hall effect, Kondo and Coulomb blockade effects, finite-voltage transport, multi-terminal transport, quantum pumps, superconducting nanostructures, environmental effects, and pulling curves and conductance histograms for mechanically-controlled break-junction experiments. (paper)

A spin-transport system for a longitudinally polarized epithermal neutron beam

International Nuclear Information System (INIS)

Crawford, B.E.; Bowman, J.D.; Penttilae, S.I.; Roberson, N.R.

2001-01-01

The TRIPLE (Time Reversal and Parity at Low Energies) collaboration uses a polarized epithermal neutron beam and a capture γ-ray detector to study parity violation in neutron-nucleus reactions. In order to preserve the spin polarization of the neutrons as they travel the 60-m path to the target, the beam pipes are wrapped with wire to produce a solenoidal magnetic field of about 10 G along the beam direction. The flanges and bellows between sections of the beam pipe cause gaps in the windings which in turn produce radial fields that can depolarize the neutron spins. A computer code has been developed that numerically evaluates the effect of these gaps on the polarization. A measurement of the neutron depolarization for neutrons in the actual spin-transport system agrees with a calculation of the neutron depolarization for the TRIPLE system. Features that will aid in designing similar spin-transport systems are discussed

Spin force and the generation of sustained spin current in time-dependent Rashba and Dresselhaus systems

International Nuclear Information System (INIS)

Ho, Cong Son; Tan, Seng Ghee; Jalil, Mansoor B. A.

2014-01-01

The generation of spin current and spin polarization in a two-dimensional electron gas structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of the non-Abelian gauge field approach, we established the relation between the Lorentz spin force and the spin current in the SOC system, and showed that the longitudinal component of the spin force induces a transverse spin current. For a constant (time-invariant) Rashba system, we recover the universal spin Hall conductivity of e/(8π) , derived previously via the Berry phase and semi-classical methods. In the case of a time-dependent SOC system, the spin current is sustained even under strong impurity scattering. We evaluated the ac spin current generated by a time-modulated Rashba SOC in the absence of any dc electric field. The magnitude of the spin current reaches a maximum when the modulation frequency matches the Larmor frequency of the electrons

Atomic carbon chains as spin-transmitters: An ab initio transport study

DEFF Research Database (Denmark)

Fürst, Joachim Alexander; Brandbyge, Mads; Jauho, Antti-Pekka

2010-01-01

An atomic carbon chain joining two graphene flakes was recently realized in a ground-breaking experiment by Jin et al. (Phys. Rev. Lett., 102 (2009) 205501). We present ab initio results for the electron transport properties of such chains and demonstrate complete spin-polarization of the transmi......An atomic carbon chain joining two graphene flakes was recently realized in a ground-breaking experiment by Jin et al. (Phys. Rev. Lett., 102 (2009) 205501). We present ab initio results for the electron transport properties of such chains and demonstrate complete spin...

Sum rule measurements of the spin-dependent compton amplitude (nucleon spin structure at Q2 = 0)

International Nuclear Information System (INIS)

Babusci, D.; Giordano, G.; Baghaei, H.; Cichocki, A.; Blecher, M.; Breuer, M.; Commeaux, C.; Didelez, J.P.; Caracappa, A.; Fan, Q.

1995-01-01

Energy weighted integrals of the difference in helicity-dependent photo-production cross sections (σ 1/2 - σ 3/2 ) provide information on the nucleon's Spin-dependent Polarizability (γ), and on the spin-dependent part of the asymptotic forward Compton amplitude through the Drell-Hearn-Gerasimov (DHG) sum rule. (The latter forms the Q 2 =0 limit of recent spin-asymmetry experiments in deep-inelastic lepton-scattering.) There are no direct measurements of σ 1/2 or σ 3/2 , for either the proton or the neutron. Estimates from current π-photo-production multipole analyses, particularly for the proton-neutron difference, are in good agreement with relativistic-l-loop Chiral calculations (χPT) for γ but predict large deviations from the DHG sum rule. Either (a) both the 2-loop corrections to the Spin-Polarizability are large and the existing multipoles are wrong, or (b) modifications to the Drell-Hearn-Gerasimov sum rule are required to fully describe the isospin structure of the nucleon. The helicity-dependent photo-reaction amplitudes, for both the proton and the neutron, will be measured at LEGS from pion-threshold to 470 MeV. In these double-polarization experiments, circularly polarized photons from LEGS will be used with SPHICE, a new frozen-spin target consisting of rvec H · rvec D in the solid phase. Reaction channels will be identified in SASY, a large detector array covering about 80% of 4π. A high degree of symmetry in both target and detector will be used to minimize systematic uncertainties

Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires

International Nuclear Information System (INIS)

Estevez Hernandez, Sergio

2009-01-01

Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e 2 /h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of

Temperature dependence of the magnetization of canted spin structures

DEFF Research Database (Denmark)

Jacobsen, Henrik; Lefmann, Kim; Brok, Erik

2012-01-01

Numerous studies of the low-temperature saturation magnetization of ferrimagnetic nanoparticles and diamagnetically substituted ferrites have shown an anomalous temperature dependence. It has been suggested that this is related to freezing of canted magnetic structures. We present models for the ......Numerous studies of the low-temperature saturation magnetization of ferrimagnetic nanoparticles and diamagnetically substituted ferrites have shown an anomalous temperature dependence. It has been suggested that this is related to freezing of canted magnetic structures. We present models...... for the temperature dependence of the magnetization of a simple canted spin structure in which relaxation can take place at finite temperatures between spin configurations with different canting angles. We show that the saturation magnetization may either decrease or increase with decreasing temperature, depending...

Spin injection, transport, and read/write operation in spin-based MOSFET

International Nuclear Information System (INIS)

Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi

2011-01-01

We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan; Wu, Jun; Li, Peng; Zhang, Qiang; Zhao, Yuelei; Manchon, Aurelien; Xiao, John Q.; Zhang, Xixiang

2017-01-01

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan

2017-03-07

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

Science.gov (United States)

Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

2010-07-23

We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

Role of electron-electron scattering on spin transport in single layer graphene

Directory of Open Access Journals (Sweden)

Bahniman Ghosh

2014-01-01

Full Text Available In this work, the effect of electron-electron scattering on spin transport in single layer graphene is studied using semi-classical Monte Carlo simulation. The D’yakonov-P’erel mechanism is considered for spin relaxation. It is found that electron-electron scattering causes spin relaxation length to decrease by 35% at 300 K. The reason for this decrease in spin relaxation length is that the ensemble spin is modified upon an e-e collision and also e-e scattering rate is greater than phonon scattering rate at room temperature, which causes change in spin relaxation profile due to electron-electron scattering.

Spin diffusion in disordered organic semiconductors

Science.gov (United States)

Li, Ling; Gao, Nan; Lu, Nianduan; Liu, Ming; Bässler, Heinz

2015-12-01

An analytical theory for spin diffusion in disordered organic semiconductors is derived. It is based on percolation theory and variable range hopping in a disordered energy landscape with a Gaussian density of states. It describes universally the dependence of the spin diffusion on temperature, carrier density, material disorder, magnetic field, and electric field at the arbitrary magnitude of the Hubbard energy of charge pairs. It is found that, compared to the spin transport carried by carriers hopping, the spin exchange will hinder the spin diffusion process at low carrier density, even under the condition of a weak electric field. Importantly, under the influence of a bias voltage, anomalous spreading of the spin packet will lead to an abnormal temperature dependence of the spin diffusion coefficient and diffusion length. This explains the recent experimental data for spin diffusion length observed in Alq3.

Spin-polarized transport through single-molecule magnet Mn6 complexes

KAUST Repository

Cremades, Eduard; Pemmaraju, C. D.; Sanvito, Stefano; Ruiz, Eliseo

2013-01-01

The coherent transport properties of a device, constructed by sandwiching a Mn6 single-molecule magnet between two gold surfaces, are studied theoretically by using the non-equilibrium Green's function approach combined with density functional theory. Two spin states of such Mn6 complexes are explored, namely the ferromagnetically coupled configuration of the six MnIII cations, leading to the S = 12 ground state, and the low S = 4 spin state. For voltages up to 1 volt the S = 12 ground state shows a current one order of magnitude larger than that of the S = 4 state. Furthermore this is almost completely spin-polarized, since the Mn6 frontier molecular orbitals for S = 12 belong to the same spin manifold. As such the high-anisotropy Mn6 molecule appears as a promising candidate for implementing, at the single molecular level, both spin-switches and low-temperature spin-valves. © 2013 The Royal Society of Chemistry.

Spin-polarized transport through single-molecule magnet Mn6 complexes

KAUST Repository

Cremades, Eduard

2013-01-01

The coherent transport properties of a device, constructed by sandwiching a Mn6 single-molecule magnet between two gold surfaces, are studied theoretically by using the non-equilibrium Green\\'s function approach combined with density functional theory. Two spin states of such Mn6 complexes are explored, namely the ferromagnetically coupled configuration of the six MnIII cations, leading to the S = 12 ground state, and the low S = 4 spin state. For voltages up to 1 volt the S = 12 ground state shows a current one order of magnitude larger than that of the S = 4 state. Furthermore this is almost completely spin-polarized, since the Mn6 frontier molecular orbitals for S = 12 belong to the same spin manifold. As such the high-anisotropy Mn6 molecule appears as a promising candidate for implementing, at the single molecular level, both spin-switches and low-temperature spin-valves. © 2013 The Royal Society of Chemistry.

Effect of Rashba and Dresselhaus Spin-Orbit Couplings on Electron Spin Polarization in a Hybrid Magnetic-Electric Barrier Nanostructure

Science.gov (United States)

Yang, Shi-Peng; Lu, Mao-Wang; Huang, Xin-Hong; Tang, Qiang; Zhou, Yong-Long

2017-04-01

A theoretical study has been carried out on the spin-dependent electron transport in a hybrid magnetic-electric barrier nanostructure with both Rashba and Dresselhaus spin-orbit couplings, which can be experimentally realized by depositing a ferromagnetic strip and a Schottky metal strip on top of a semiconductor heterostructure. The spin-orbit coupling-dependent transmission coefficient, conductance, and spin polarization are calculated by solving the Schrödinger equation exactly with the help of the transfer-matrix method. We find that both the magnitude and sign of the electron spin polarization vary strongly with the spin-orbit coupling strength. Thus, the degree of electron spin polarization can be manipulated by properly adjusting the spin-orbit coupling strength, and such a nanosystem can be employed as a controllable spin filter for spintronics applications.

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

Science.gov (United States)

Sattari, Farhad; Mirershadi, Soghra

2018-01-01

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin-orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.

Spin effects in intermediate-energy heavy-ion collisions

International Nuclear Information System (INIS)

Xu Jun; Li Baoan; Xia Yin; Shen Wenqing

2014-01-01

In this paper, we report and extend our recent work where the nucleon spin-orbit interaction and its spin degree of freedom were introduced explicitly for the first time in the isospin-dependent Boltzmann-Uehling-Uhlenbeck transport model for heavy-ion reactions. Despite of the significant cancellation of the time-even and time-odd spin-related mean-field potentials from the spin-orbit interaction,an appreciable local spin polarization is observed in heavy-ion collisions at intermediate energies because of the dominating role of the time-odd terms. It is also found that the spin up-down differential transverse flow in heavy-ion collisions is a useful probe of the strength, density dependence, and isospin dependence of the in-medium spin-orbit interaction, and its magnitude is still considerable even at smaller systems. (authors)

Spin tune dependence on closed orbit in RHIC

International Nuclear Information System (INIS)

Ptitsyn, V.; Bai, M.; Roser, T.

2010-01-01

Polarized proton beams are accelerated in RHIC to 250 GeV energy with the help of Siberian Snakes. The pair of Siberian Snakes in each RHIC ring holds the design spin tune at 1/2 to avoid polarization loss during acceleration. However, in the presence of closed orbit errors, the actual spin tune can be shifted away from the exact 1/2 value. It leads to a corresponding shift of locations of higher-order ('snake') resonances and limits the available betatron tune space. The largest closed orbit effect on the spin tune comes from the horizontal orbit angle between the two snakes. During RHIC Run in 2009 dedicated measurements with polarized proton beams were taken to verify the dependence of the spin tune on the local orbits at the Snakes. The experimental results are presented along with the comparison with analytical predictions.

Spin-dependent scattering by a potential barrier on a nanotube

International Nuclear Information System (INIS)

Abranyos, Yonatan; Gumbs, Godfrey; Fekete, Paula

2010-01-01

The electron spin effects on the surface of a nanotube have been considered through the spin-orbit interaction (SOI), arising from the electron confinement on the surface of the nanotube. This is of the same nature as the Rashba-Bychkov SOI at a semiconductor heterojunction. We estimate the effect of disorder within a potential barrier on the transmission probability. Using a continuum model, we obtain analytic expressions for the spin-split energy bands for electrons on the surface of nanotubes in the presence of SOI. First we calculate analytically the amplitudes of scattering from a potential barrier located around the axis of the nanotube into spin-dependent states. The effect of disorder on the scattering process is included phenomenologically and induces a reduction in the transition probability. We analyze the relative role of SOI and disorder in the transmission probability which depends on the angular and linear momentum of the incoming particle, and its spin orientation. Finally we demonstrate that in the presence of disorder, perfect transmission may not be achieved for finite barrier heights.

The effect of electrodes on 11 acene molecular spin valve: Semi-empirical study

Science.gov (United States)

Aadhityan, A.; Preferencial Kala, C.; John Thiruvadigal, D.

2017-10-01

A new revolution in electronics is molecular spintronics, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. The key point is the creation of molecular spin valve which consists of a diamagnetic molecule in between two magnetic leads. In this paper, non-equilibrium Green's function (NEGF) combined with Extended Huckel Theory (EHT); a semi-empirical approach is used to analyse the electron transport characteristics of 11 acene molecular spin valve. We examine the spin-dependence transport on 11 acene molecular junction with various semi-infinite electrodes as Iron, Cobalt and Nickel. To analyse the spin-dependence transport properties the left and right electrodes are joined to the central region in parallel and anti-parallel configurations. We computed spin polarised device density of states, projected device density of states of carbon and the electrode element, and transmission of these devices. The results demonstrate that the effect of electrodes modifying the spin-dependence behaviours of these systems in a controlled way. In Parallel and anti-parallel configuration the separation of spin up and spin down is lager in the case of iron electrode than nickel and cobalt electrodes. It shows that iron is the best electrode for 11 acene spin valve device. Our theoretical results are reasonably impressive and trigger our motivation for comprehending the transport properties of these molecular-sized contacts.

Neutron scattering and muon spin rotation as probes of light interstitial transport

International Nuclear Information System (INIS)

Brown, D.W.

1985-01-01

The transport of light interstitials, specifically of hydrogen isotopes and the positive muon, is studied with the help of microscopic transport models. The principal observables are the differential neutron scattering cross section of the hydrogen isotopes and the muon spin rotation signal of the positive muon. The transport feature of primary interest is coherence arising as a result of persistence of quantum mechanical phase memory. Evaluation of observables is based on the generalized master equation, or alternatively, the stochastic Liouville equation. The latter is applied to obtain the neutron scattering lineshapes for local tunneling systems as well as for extended Bravais and non-Bravais lattices. It is found that the usual form of the stochastic Liouville equation does not address adequately transport among non-degenerate site-states. An appropriate modification is suggested and employed to obtain scattering lineshapes applicable to recent experiments on impurity-trapped hydrogen. The muon spin rotation signal is formulated under the assumption that spin interactions constitute a negligible source of scattering for muon transport. The depolarization function is evaluated for the cases of local tunneling systems and simple models of spatially extended transport. The former addresses consequences of coherence and both address the consequences of the spatial extent of the muon wavefunction. It is found that the depolarization function is sensitive to the wave function extent, and the detail attributable to it is characterized

Electron spin transport in graphene and carbon nanotubes

NARCIS (Netherlands)

Tombros, Nikolaos

2008-01-01

Electron spin transport in grafeen en in koolstof nanobuisjes Grafeen, is een kristaal laag van koolstof atomen die slechts één atoomlaag dik is. Een koolstof nanobuisje is te verkrijgen door een grafeen laag op te rollen. In dit proefschrift laten we zien, met behulp van experimenten, dat deze

Inverse spin-valve effect in nanoscale Si-based spin-valve devices

Science.gov (United States)

Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

2017-12-01

We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

Q2 dependence of the spin structure function in the resonance region

International Nuclear Information System (INIS)

Li, Z.; Li, Z.

1994-01-01

In this paper, we show what we can learn from the CEBAF experiments on spin-structure functions, and the transition from the Drell-Hearn-Gerasimov sum rule in the real photon limit to the spin-dependent sum rules in deep inelastic scattering, and how the asymmetry A 1 (x,Q 2 ) approaches the scaling limit in the resonance region. The spin structure function in the resonance region alone cannot determine the spin-dependent sum rule due to the kinematic restriction of the resonance region. The integral ∫ 0 1 {A 1 (x,Q 2 )F 2 (x,Q 2 )/2x[1+R(x,Q 2 )]}dx is estimated from Q 2 =0--2.5 GeV 2 . The result shows that there is a region where both contributions from the baryon resonances and the deep inelastic scattering are important; thus it provides important information on the high twist effects on the spin-dependent sum rule

Longitudinal spin dependence of massive lepton pair production

International Nuclear Information System (INIS)

Berger, E. L.; Gordon, L. E.; Klasen, M.

2000-01-01

In this paper, the authors summarize recent work in which they demonstrate that the Compton subprocess, q + g -> γ* + q also dominates the Drell-Yan cross section in polarized and unpolarized proton-proton reactions for values of the transverse momentum Q T of the pair that are larger than roughly half of the pair mass Q, Q T > Q/2. The Drell-Yan process is therefore a valuable, heretofore overlooked, independent source of constraints on the spin-averaged and spin-dependent gluon densities. Although the Drell-Yan cross section is smaller than the prompt photon cross section, massive lepton pair production is cleaner theoretically since long-range fragmentation contributions are absent as are the experimental and theoretical complications associated with isolation of the real photon. Moreover, the dynamics of spin-dependence in hard-scattering processes is a sufficiently complex topic, and its understanding at an early stage in its development, that several defensible approaches for extracting polarized parton densities deserve to be pursued with the expectation that consistent results must emerge

Semiclassical treatment of transport and spin relaxation in spin-orbit coupled systems

Energy Technology Data Exchange (ETDEWEB)

Lueffe, Matthias Clemens

2012-02-10

The coupling of orbital motion and spin, as derived from the relativistic Dirac equation, plays an important role not only in the atomic spectra but as well in solid state physics. Spin-orbit interactions are fundamental for the young research field of semiconductor spintronics, which is inspired by the idea to use the electron's spin instead of its charge for fast and power saving information processing in the future. However, on the route towards a functional spin transistor there is still some groundwork to be done, e.g., concerning the detailed understanding of spin relaxation in semiconductors. The first part of the present thesis can be placed in this context. We have investigated the processes contributing to the relaxation of a particularly long-lived spin-density wave, which can exist in semiconductor heterostructures with Dresselhaus and Rashba spin-orbit coupling of precisely the same magnitude. We have used a semiclassical spindiffusion equation to study the influence of the Coulomb interaction on the lifetime of this persistent spin helix. We have thus established that, in the presence of perturbations that violate the special symmetry of the problem, electron-electron scattering can have an impact on the relaxation of the spin helix. The resulting temperature-dependent lifetime reproduces the experimentally observed one in a satisfactory manner. It turns out that cubic Dresselhaus spin-orbit coupling is the most important symmetry-breaking element. The Coulomb interaction affects the dynamics of the persistent spin helix also via an Hartree-Fock exchange field. As a consequence, the individual spins precess about the vector of the surrounding local spin density, thus causing a nonlinear dynamics. We have shown that, for an experimentally accessible degree of initial spin polarization, characteristic non-linear effects such as a dramatic increase of lifetime and the appearance of higher harmonics can be expected. Another fascinating solid

Length dependence of rectification in organic co-oligomer spin rectifiers

International Nuclear Information System (INIS)

Hu Gui-Chao; Zhang Zhao; Li Ying; Ren Jun-Feng; Wang Chuan-Kui

2016-01-01

The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the charge-current rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length. (paper)

Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V AH ) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V AH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V AH depends on the doping density. The results are discussed

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

Science.gov (United States)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces

Energy Technology Data Exchange (ETDEWEB)

Ke, Yougang; Liu, Yachao; He, Yongli; Zhou, Junxiao; Luo, Hailu, E-mail: hailuluo@hnu.edu.cn; Wen, Shuangchun [Laboratory for Spin Photonics, School of Physics and Electronics, Hunan University, Changsha 410082 (China)

2015-07-27

We report the realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces. Compared with the plasmonic metasurfaces, the all-dielectric metasurface exhibits more high transmission efficiency and conversion efficiency, which makes it possible to achieve the spin-dependent splitting with arbitrary intensity patterns. Our findings suggest a way for generation and manipulation of spin photons, and thereby offer the possibility of developing spin-based nanophotonic applications.

Magnetic field dependence of the magnon spin diffusion length in the magnetic insulator yttrium iron garnet

NARCIS (Netherlands)

Cornelissen, L. J.; van Wees, B. J.

2016-01-01

We investigated the effect of an external magnetic field on the diffusive spin transport by magnons in the magnetic insulator Y3Fe5O12, using a nonlocal magnon transport measurement geometry. We observed a decrease in magnon spin diffusion length lambda(m) for increasing field strengths, where

Spin-flip induced magnetoresistance in positionally disordered organic solids.

Science.gov (United States)

Harmon, N J; Flatté, M E

2012-05-04

A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

Effect of deformation and orientation on spin orbit density dependent nuclear potential

Science.gov (United States)

Mittal, Rajni; Kumar, Raj; Sharma, Manoj K.

2017-11-01

Role of deformation and orientation is investigated on spin-orbit density dependent part VJ of nuclear potential (VN=VP+VJ) obtained within semi-classical Thomas Fermi approach of Skyrme energy density formalism. Calculations are performed for 24-54Si+30Si reactions, with spherical target 30Si and projectiles 24-54Si having prolate and oblate shapes. The quadrupole deformation β2 is varying within range of 0.023 ≤ β2 ≤0.531 for prolate and -0.242 ≤ β2 ≤ -0.592 for oblate projectiles. The spin-orbit dependent potential gets influenced significantly with inclusion of deformation and orientation effect. The spin-orbit barrier and position gets significantly influenced by both the sign and magnitude of β2-deformation. Si-nuclei with β220. The possible role of spin-orbit potential on barrier characteristics such as barrier height, barrier curvature and on the fusion pocket is also probed. In reference to prolate and oblate systems, the angular dependence of spin-orbit potential is further studied on fusion cross-sections.

Continuum model for chiral induced spin selectivity in helical molecules

Energy Technology Data Exchange (ETDEWEB)

Medina, Ernesto [Centro de Física, Instituto Venezolano de Investigaciones Científicas, 21827, Caracas 1020 A (Venezuela, Bolivarian Republic of); Groupe de Physique Statistique, Institut Jean Lamour, Université de Lorraine, 54506 Vandoeuvre-les-Nancy Cedex (France); Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287 (United States); González-Arraga, Luis A. [IMDEA Nanoscience, Cantoblanco, 28049 Madrid (Spain); Finkelstein-Shapiro, Daniel; Mujica, Vladimiro [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287 (United States); Berche, Bertrand [Centro de Física, Instituto Venezolano de Investigaciones Científicas, 21827, Caracas 1020 A (Venezuela, Bolivarian Republic of); Groupe de Physique Statistique, Institut Jean Lamour, Université de Lorraine, 54506 Vandoeuvre-les-Nancy Cedex (France)

2015-05-21

A minimal model is exactly solved for electron spin transport on a helix. Electron transport is assumed to be supported by well oriented p{sub z} type orbitals on base molecules forming a staircase of definite chirality. In a tight binding interpretation, the spin-orbit coupling (SOC) opens up an effective π{sub z} − π{sub z} coupling via interbase p{sub x,y} − p{sub z} hopping, introducing spin coupled transport. The resulting continuum model spectrum shows two Kramers doublet transport channels with a gap proportional to the SOC. Each doubly degenerate channel satisfies time reversal symmetry; nevertheless, a bias chooses a transport direction and thus selects for spin orientation. The model predicts (i) which spin orientation is selected depending on chirality and bias, (ii) changes in spin preference as a function of input Fermi level and (iii) back-scattering suppression protected by the SO gap. We compute the spin current with a definite helicity and find it to be proportional to the torsion of the chiral structure and the non-adiabatic Aharonov-Anandan phase. To describe room temperature transport, we assume that the total transmission is the result of a product of coherent steps.

Temperature dependent spin momentum densities in Ni-Mn-In alloys

International Nuclear Information System (INIS)

Ahuja, B L; Dashora, Alpa; Vadkhiya, L; Heda, N L; Priolkar, K R; Lobo, Nelson; Itou, M; Sakurai, Y; Chakrabarti, Aparna; Singh, Sanjay; Barman, S R

2010-01-01

The spin-dependent electron momentum densities in Ni 2 MnIn and Ni 2 Mn 1.4 In 0.6 shape memory alloy using magnetic Compton scattering with 182.2 keV circularly polarized synchrotron radiation are reported. The magnetic Compton profiles were measured at different temperatures ranging between 10 and 300 K. The profiles have been analyzed mainly in terms of Mn 3d electrons to determine their role in the formation of the total spin moment. We have also computed the spin polarized energy bands, partial and total density of states, Fermi surfaces and spin moments using full potential linearized augmented plane wave and spin polarized relativistic Korringa-Kohn-Rostoker methods. The total spin moments obtained from our magnetic Compton profile data are explained using both the band structure models. The present Compton scattering investigations are also compared with magnetization measurements.

Spin transport through electric field modulated graphene periodic ferromagnetic barriers

International Nuclear Information System (INIS)

Sattari, F.; Faizabadi, E.

2014-01-01

Using the transfer matrix method, the spin transmission coefficient and the spin conductivity are studied theoretically through the monolayer and bilayer graphene periodic ferromagnetic barriers modulated by a homogeneous electric field. The spin conductivity of the systems has an oscillatory behavior with respect to the external electric field which depends on the spin state of electron. In addition, the oscillation amplitude of the spin conductivity and spin polarization increase by increasing the number of barriers, but for a monolayer system with number of barriers greater than thirty, also for a bilayer system with the number of barriers greater than four, the oscillation amplitude does not change significantly. Our probes show that for bilayer system unlike monolayer structure the highest value of spin polarization achieved can be 1 or (−1). So, for designing spintronic devices, bilayer graphene is more efficient

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

Science.gov (United States)

Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

Field dependence of the electron spin relaxation in quantum dots.

Science.gov (United States)

Calero, Carlos; Chudnovsky, E M; Garanin, D A

2005-10-14

The interaction of the electron spin with local elastic twists due to transverse phonons is studied. The universal dependence of the spin-relaxation rate on the strength and direction of the magnetic field is obtained in terms of the electron gyromagnetic tensor and macroscopic elastic constants of the solid. The theory contains no unknown parameters and it can be easily tested in experiment. At high magnetic field it provides a parameter-free lower bound on the electron spin relaxation in quantum dots.

Spin-dependent Nucleon Structure Studies at MIT/Bates

International Nuclear Information System (INIS)

Botto, T.

2005-01-01

We present preliminary results from recent measurements of the proton, neutron and deuterium electro-magnetic form factors obtained by the BLAST collaboration at the MIT/Bates Linear Accelerator Facility. BLAST (Bates Large Acceptance Spectrometer Toroid) is a large-acceptance multi-purpose detector dedicated to studies of exclusive spin-dependent electron scattering from internal polarized targets. BLAST makes use of stored electron beam currents in excess of 150 mA with a 60-70% polarization. The electron beam is let through a 15 mm diameter, 60 cm long open-ended storage cell which is fed with ultra-pure, high-polarization H1,D1 gas from an Atomic Beam Source. The target polarization can be rapidly reversed between different vector and tensor target states, thus minimizing systematic uncertainties. The target spin can be oriented to any in-plane direction via a set of Helmholtz coils. Target polarizations in the storage cell of up to 80% (vector) and 70% (tensor) have been routinely achieved over a period of several months. Our data on the D-vector(e-vector,e'n) reaction off vector polarized deuterium allow for a unique extraction of the neutron charge form factor G E n . At same time, complementary measurements of G M n , T20 and the spin-dependent nucleon momentum distributions in deuterium are obtained via the D-vector(e-vector,e'), D (e-vector,e'd) and D (e-vector,e'p) reactions. In addition, BLAST data on vector polarized hydrogen will provide novel measurements of the GE/GM form-factor ratio on the proton as well as of the spin-dependent electro-excitation of the Δ(1232) resonance. Such comprehensive program on few body physics is now well underway and preliminary data will be presented

Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-10-15

The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V{sub AH}) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V{sub AH} on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V{sub AH} depends on the doping density. The results are discussed.

Modeling and simulation of spin-polarized transport at the kinetic and diffusive level

International Nuclear Information System (INIS)

Possanner, S.

2012-01-01

The aim of this thesis is to contribute to the understanding of spin-induced phenomena in electron motion. These phenomena arise when electrons move through a (partially) magnetic environment, in such a way that its magnetic moment (spin) may interact with the surroundings. The pure quantum nature of the spin requires transport models that deal with effects like quantum coherence, entanglement (correlation) and quantum dissipation. On the meso- and macroscopic level it is not yet clear under which circumstances these quantum effects may transpire. The purpose of this work is, on the one hand, to derive novel spin transport models from basic principles and, on the other hand, to develop numerical algorithms that allow for a solution of these new and other existing model equations. The thesis consists of four parts. The first part comprises an overview of fundamental spin-related concepts in electronic transport such as the giant-magneto-resistance (GMR) effect, the spin-transfer torque in metallic magnetic multilayers and the matrix-character of transport equations that take spin-coherent electron states into account. In particular, we consider the diffusive Zhang-Levy-Fert (ZLF) model, an exchange-torque model that consists of the Landau-Lifshitz equation and a heuristic matrix spin-diffusion equation. A finite difference scheme based on Strang operator splitting is developed that enables a numerical, self-consistent solution of this non-linear system within multilayer structures. Finally, the model is tested by comparison of numerical results to recent experimental data. In part two we propose a matrix-Boltzmann equation that allows for the description of spin-coherent electron transport on a kinetic level. The novelty here is a linear collision operator in which the transition rates from momentum k to momentum k' are modeled by a 2x2 Hermitian matrix; hence the mean-free paths of spin-up and spin-down electrons are represented by the eigenvalues of this

Electronic transport through EuO spin-filter tunnel junctions

KAUST Repository

Jutong, Nuttachai; Eckern, Ulrich; Rungger, Ivan; Sanvito, Stefano; Schuster, Cosima; Schwingenschlö gl, Udo

2012-01-01

. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large

Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

DEFF Research Database (Denmark)

Hu, C.-M.; Nitta, Junsaku; Jensen, Ane

2001-01-01

Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spi...

Spin-charge coupled dynamics driven by a time-dependent magnetization

Science.gov (United States)

Tölle, Sebastian; Eckern, Ulrich; Gorini, Cosimo

2017-03-01

The spin-charge coupled dynamics in a thin, magnetized metallic system are investigated. The effective driving force acting on the charge carriers is generated by a dynamical magnetic texture, which can be induced, e.g., by a magnetic material in contact with a normal-metal system. We consider a general inversion-asymmetric substrate/normal-metal/magnet structure, which, by specifying the precise nature of each layer, can mimic various experimentally employed setups. Inversion symmetry breaking gives rise to an effective Rashba spin-orbit interaction. We derive general spin-charge kinetic equations which show that such spin-orbit interaction, together with anisotropic Elliott-Yafet spin relaxation, yields significant corrections to the magnetization-induced dynamics. In particular, we present a consistent treatment of the spin density and spin current contributions to the equations of motion, inter alia, identifying a term in the effective force which appears due to a spin current polarized parallel to the magnetization. This "inverse-spin-filter" contribution depends markedly on the parameter which describes the anisotropy in spin relaxation. To further highlight the physical meaning of the different contributions, the spin-pumping configuration of typical experimental setups is analyzed in detail. In the two-dimensional limit the buildup of dc voltage is dominated by the spin-galvanic (inverse Edelstein) effect. A measuring scheme that could isolate this contribution is discussed.

Microwave spectroscopy and electronic transport properties of ferromagnetic Josephson junctions and superconducting spin-valves

Energy Technology Data Exchange (ETDEWEB)

Thalmann, Marcel; Rudolf, Marcel; Pietsch, Torsten [Zukunftskolleg and Department of Physics, University of Konstanz, Universitaetsstrasse 10, 78464 Konstanz (Germany)

2016-07-01

Hybrid superconducting nanostructures recently attracted tremendous interest, due to their great potential in dissipation-less spin-electronics with unprecedented switching rates. The practical realisation of such devices, however, requires a complete understanding of the transfer and dynamics of spin- and charge currents between superconducting (S) and ferromagnetic (F) circuit elements, as well as the coupling between spin- and charge degrees of freedom in these systems. We investigate novel transport phenomena in superconductor-ferromagnet hybrid nanostructures under non-equilibrium conditions. Microwave spectroscopy is used to elucidate fundamental questions related to the complex interplay of competing order parameters and the question of relaxation mechanisms of non-equilibrium distributions with respect to spin, charge and energy. Recent experiments on two complimentary device structures are discussed: (I) in diffusive S/F/S Josephson junctions with non-sinusoidal current-phase relationship and (II) local and non-local transport measurements and microwave spectroscopy in F/S/F lateral spin-valves.

Spin crossover and high spin filtering behavior in Co-Pyridine and Co-Pyrimidine molecules

Science.gov (United States)

Wen, Zhongqian; Zhou, Liping; Cheng, Jue-Fei; Li, Shu-Jin; You, Wen-Long; Wang, Xuefeng

2018-03-01

We present a theoretical study on a series of cobalt complexes, which are constructed with cobalt atoms and pyridine/pyrimidine rings, using density functional theory. We investigate the structural and electric transport properties of spin crossover (SCO) Co complex with two spin states, namely low-spin configuration [LS] and high-spin configuration [HS]. Energy analyses of the two spin states imply that the SCO Co-Pyridine2 and Co-Pyrimidine2 complexes may display a spin transition process accompanied by a geometric modification driven by external stimuli. A nearly perfect spin filtering effect is observed in the Co-Pyrimidine2 complex with [HS] state. In addition, we also discover the contact-dependent transmission properties of Co-Pyridine2. These findings indicate that SCO Co complexes are promising materials for molecular spintronic devices.

Microscopic Linear Response Theory of Spin Relaxation and Relativistic Transport Phenomena in Graphene

Directory of Open Access Journals (Sweden)

Manuel Offidani

2018-05-01

Full Text Available We present a unified theoretical framework for the study of spin dynamics and relativistic transport phenomena in disordered two-dimensional Dirac systems with pseudospin-spin coupling. The formalism is applied to the paradigmatic case of graphene with uniform Bychkov-Rashba interaction and shown to capture spin relaxation processes and associated charge-to-spin interconversion phenomena in response to generic external perturbations, including spin density fluctuations and electric fields. A controlled diagrammatic evaluation of the generalized spin susceptibility in the diffusive regime of weak spin-orbit interaction allows us to show that the spin and momentum lifetimes satisfy the standard Dyakonov-Perel relation for both weak (Gaussian and resonant (unitary nonmagnetic disorder. Finally, we demonstrate that the spin relaxation rate can be derived in the zero-frequency limit by exploiting the SU(2 covariant conservation laws for the spin observables. Our results set the stage for a fully quantum-mechanical description of spin relaxation in both pristine graphene samples with weak spin-orbit fields and in graphene heterostructures with enhanced spin-orbital effects currently attracting much attention.

Spin-dependent rectification in the C59N molecule

Indian Academy of Sciences (India)

2013-02-05

Feb 5, 2013 ... where E is the injected electron energy and ξ is a very small number ... et al [40] considered a four-site system to study transport through a ... iM ,σ (ciM ,σ ) creates (destroys) an electron with spin σ at site i of C60 and εiM is the.

Engineering a spin-fet: spin-orbit phenomena and spin transport induced by a gate electric field

OpenAIRE

Cardoso, J. L.; Hernández-Saldaña, H.

2012-01-01

In this work, we show that a gate electric field, applied in the base of the field-effect devices, leads to inducing spin-orbit interactions (Rashba and linear Dresselhauss) and confines the transport electrons in a two-dimensional electron gas. On the basis of these phenomena we solve analytically the Pauli equation when the Rashba strength and the linear Dresselhaus one are equal, for a tuning value of the gate electric field $\\mathcal{E}_g^*$. Using the transfer matrix approach, we provide...

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.

2015-09-21

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang; Wang, Xuhui; Manchon, Aurelien

2016-01-01

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang

2016-01-11

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien; Zhang, S.; Lee, K.-J.

2010-01-01

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien

2010-11-15

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Conductance and spin polarization for a quantum wire with the competition of Rashba and Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui

2010-01-01

We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Science.gov (United States)

Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

Spin injection and filtering in halfmetal/semiconductor (CrAs/GaAs) heterostructures

International Nuclear Information System (INIS)

Stickler, B. A.; Ertler, C.; Pötz, W.; Chioncel, L.; Arrigoni, E.

2013-01-01

Theoretical investigations of spin-dependent transport in GaAS/CrAs/GaAs halfmetal-semiconductor heterostructures indicate that this system is a candidate for an efficient room temperature spin injector and filter. The spin dependent electronic structure of zincblende CrAs and the band offset between GaAs and CrAs are determined by ab-initio calculations within the method of linear muffin tin orbitals (LMTO). This band structure is mapped onto an effective sp 3 d 5 s* nearest neighbor tight-binding (TB) Hamiltonian and the steady-state transport characteristic is calculated within a non-equilibrium Green’s function approach. Even at room temperature we find current spin polarizations up to 97%

Detection of single electron spin resonance in a double quantum dota)

Science.gov (United States)

Koppens, F. H. L.; Buizert, C.; Vink, I. T.; Nowack, K. C.; Meunier, T.; Kouwenhoven, L. P.; Vandersypen, L. M. K.

2007-04-01

Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron, as well as the hybridization of two-electron spin states. In this article, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance) and the effective nuclear fields on the spin states in the two dots. We numerically calculate the current flow due to the induced spin flips via electron spin resonance, and we study the detector efficiency for a range of parameters. The experimental data are compared with the model and we find a reasonable agreement.

Electron-Spin Precession in Dependence of the Orientation of the External Magnetic Field.

Science.gov (United States)

Miah, M Idrish

2009-03-13

Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (theta) of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function of theta are obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electron g-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed.

Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2017-01-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit

2017-11-29

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

Magnon detection using a ferroic collinear multilayer spin valve.

Science.gov (United States)

Cramer, Joel; Fuhrmann, Felix; Ritzmann, Ulrike; Gall, Vanessa; Niizeki, Tomohiko; Ramos, Rafael; Qiu, Zhiyong; Hou, Dazhi; Kikkawa, Takashi; Sinova, Jairo; Nowak, Ulrich; Saitoh, Eiji; Kläui, Mathias

2018-03-14

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y 3 Fe 5 O 12 |CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y 3 Fe 5 O 12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian

2013-06-26

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian; Wang, Xuhui; Chshiev, Mairbek; Manchon, Aurelien

2013-01-01

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Theory and modeling of spin-transport on the microscopic and the mesoscopic scale

International Nuclear Information System (INIS)

Stickler, B.

2013-01-01

It is the aim of this thesis to contribute to the description of spin dynamics in solid state systems. In the first part of this work we present a full quantum treatment of spin-coherent transport in halfmetal / semiconductor CrAs / GaAs heterostructures. The theoretical approach is based on the ab-initio determination of the electronic structures of the materials involved and on the calculation of the band offset. These ingredients are in the second step cast into an effective nearest-neighbor tight-binding Hamiltonian. Finally, in the third step, we investigate by means of the non-equilibrium Green's function technique the current which flows through such a heterostructure if a finite bias is applied. With the help of this strategy it is possible to identify CrAs / GaAs heterostructures as probable candidates for all-semiconductor room-temperature spin-filtering devices, which operate without externally applied magnetic fields. In the second part of this thesis we derive a linear semiclassical spinorial Boltzmann equation. For many (mesoscopic) device geometries a full quantum treatment of transport dynamics may not be necessary and may not be feasible with state-of-the-art techniques. The derivation is based on the quantum mechanical description of a composite quantum system by means of von Neumann's equation. The Born-Markov limit allows us to derive a Lindblad master equation for the reduced system plus non-Markovian corrections. Finally, we perform a Wigner transformation and take the semiclassical limit in order to obtain a spinorial Boltzmann equation, suitable for the description of spin transport on the mesoscopic scale. It has to be emphasized that the spinorial Boltzmann equation constitutes the missing link between a full quantum treatment and heuristically introduced mesoscopic models for spin transport in solid state systems. (author) [de

Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems

Science.gov (United States)

Hamamoto, Keita; Ezawa, Motohiko; Kim, Kun Woo; Morimoto, Takahiro; Nagaosa, Naoto

2017-06-01

Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and has been studied actively. For example, representative methods of spin-current generation include spin-polarized current injections from ferromagnetic metals, the spin Hall effect, and the spin battery. Here, we theoretically propose a mechanism of spin-current generation based on nonlinear phenomena. By using Boltzmann transport theory, we show that a simple application of the electric field E induces spin current proportional to E2 in noncentrosymmetric spin-orbit coupled systems. We demonstrate that the nonlinear spin current of the proposed mechanism is supported in the surface state of three-dimensional topological insulators and two-dimensional semiconductors with the Rashba and/or Dresselhaus interaction. In the latter case, the angular dependence of the nonlinear spin current can be manipulated by the direction of the electric field and by the ratio of the Rashba and Dresselhaus interactions. We find that the magnitude of the spin current largely exceeds those in the previous methods for a reasonable magnitude of the electric field. Furthermore, we show that application of ac electric fields (e.g., terahertz light) leads to the rectifying effect of the spin current, where dc spin current is generated. These findings will pave a route to manipulate the spin current in noncentrosymmetric crystals.

Transient charging and discharging of spin-polarized electrons in a quantum dot

DEFF Research Database (Denmark)

De Souza, Fabricio; Leao, S.A.; Gester, R. M.

2007-01-01

We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green ...

Bottom quark contribution to spin-dependent dark matter detection

Directory of Open Access Journals (Sweden)

Jinmian Li

2016-05-01

Full Text Available We investigate a previously overlooked bottom quark contribution to the spin-dependent cross section for Dark Matter (DM scattering from the nucleon. While the mechanism is relevant to any supersymmetric extension of the Standard Model, for illustrative purposes we explore the consequences within the framework of the Minimal Supersymmetric Standard Model (MSSM. We study two cases, namely those where the DM is predominantly Gaugino or Higgsino. In both cases, there is a substantial, viable region in parameter space (mb˜−mχ≲O(100 GeV in which the bottom contribution becomes important. We show that a relatively large contribution from the bottom quark is consistent with constraints from spin-independent DM searches, as well as some incidental model dependent constraints.

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

Science.gov (United States)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

OpenAIRE

Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.

2009-01-01

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-...

Determining the spin dependent mean free path in Co90Fe10 using giant magnetoresistance

Science.gov (United States)

Shakespear, K. F.; Perdue, K. L.; Moyerman, S. M.; Checkelsky, J. G.; Harberger, S. S.; Tamboli, A. C.; Carey, M. J.; Sparks, P. D.; Eckert, J. C.

2005-05-01

The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a factor of 3 by 350K. For the other structure, it is 7.5±0.5nm at 5K and decreased by a factor of 1.5 by 350K. In both cases, the spin dependent mean free path approaches the typical thickness of ferromagnetic layers in spin valves at room temperature and, thus, has an impact on the choice of design parameters for the development of new spintronic devices.

Electron-Spin Precession in Dependence of the Orientation of the External Magnetic Field

Directory of Open Access Journals (Sweden)

Miah M

2009-01-01

Full Text Available Abstract Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (θ of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function ofθare obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electrong-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed.

Influence of quantum phase transition on spin transport in the quantum antiferromagnet in the honeycomb lattice

Science.gov (United States)

Lima, L. S.

2017-06-01

We use the SU(3) Schwinger boson theory to study the spin transport properties of the two-dimensional anisotropic frustrated Heisenberg model in a honeycomb lattice at T = 0 with single ion anisotropy and third neighbor interactions. We have investigated the behavior of the spin conductivity for this model that presents exchange interactions J1 , J2 and J3 . We study the spin transport in the Bose-Einstein condensation regime where the bosons tz are condensed. Our results show an influence of the quantum phase transition point on the spin conductivity behavior. We also have made a diagrammatic expansion for the Green-function and did not obtain any significant change of the results.

Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures

Science.gov (United States)

Hui, Ya-Juan; Cheng, Wei-Ming; Zhang, Zhao-Bing; Ji, Hong-Kai; Cheng, Xiao-Min; You, Long; Miao, Xiang-Shui

2016-07-01

Spin Hall magnetoresistance (SMR) has been investigated in Ta/CoFe2O4 nanostructures grown on different substrates. Spin currents in CoFe2O4 films are electrically detected in adjacent Ta layers owing to inverse spin Hall effects. The sign of the magnetic-field-dependent resistivity signal shows different polarities along different axes, showing different spin-dependent electron transports. A cosinelike curve of the angular dependence signal with opposite polarity is observed in two orthogonal magnetization planes, whereas a basic line is observed in another plane, revealing the spin accumulation phenomenon. The roughness of the CoFe2O4 surface tuned by substrate strains is responsible for the extent of spin accumulations and the strength of the SMR signal in the nanostructures.

Charge symmetry breaking in spin dependent parton distributions and the Bjorken sum rule

International Nuclear Information System (INIS)

Cloet, I.C.; Horsley, R.; Londergan, J.T.

2012-04-01

We present the rst determination of charge symmetry violation (CSV) in the spin-dependent parton distribution functions of the nucleon. This is done by determining the rst two Mellin moments of the spin-dependent parton distribution functions of the octet baryons from N f =2+1 lattice simulations. The results are compared with predictions from quark models of nucleon structure. We discuss the contribution of partonic spin CSV to the Bjorken sum rule, which is important because the CSV contributions represent the only partonic corrections to the Bjorken sum rule.

Charge symmetry breaking in spin dependent parton distributions and the Bjorken sum rule

Energy Technology Data Exchange (ETDEWEB)

Cloet, I.C. [Adelaide Univ, SA (Australia). CSSM, School of Chemistry and Physics; Horsley, R. [Edinburgh Univ. (United Kingdom). School of Physics and Astronomy; Londergan, J.T. [Indiana Univ., Bloomington, IN (US). Dept. of Physics and Center for Exploration of Energy and Matter] (and others)

2012-04-15

We present the rst determination of charge symmetry violation (CSV) in the spin-dependent parton distribution functions of the nucleon. This is done by determining the rst two Mellin moments of the spin-dependent parton distribution functions of the octet baryons from N{sub f}=2+1 lattice simulations. The results are compared with predictions from quark models of nucleon structure. We discuss the contribution of partonic spin CSV to the Bjorken sum rule, which is important because the CSV contributions represent the only partonic corrections to the Bjorken sum rule.

Precision measurement of the neutron spin dependent structure functions

International Nuclear Information System (INIS)

Kolomensky, Y.G.

1997-02-01

In experiment E154 at the Stanford Linear Accelerator Center the spin dependent structure function g 1 n (x, Q 2 ) of the neutron was measured by scattering longitudinally polarized 48.3 GeV electrons off a longitudinally polarized 3 He target. The high beam energy allowed the author to extend the kinematic coverage compared to the previous SLAC experiments to 0.014 ≤ x ≤ 0.7 with an average Q 2 of 5 GeV 2 . The author reports the integral of the spin dependent structure function in the measured range to be ∫ 0.014 0.7 dx g 1 n (x, 5 GeV 2 ) = -0.036 ± 0.004(stat.) ± 0.005(syst.). The author observes relatively large values of g 1 n at low x that call into question the reliability of data extrapolation to x → 0. Such divergent behavior disagrees with predictions of the conventional Regge theory, but is qualitatively explained by perturbative QCD. The author performs a Next-to-Leading Order perturbative QCD analysis of the world data on the nucleon spin dependent structure functions g 1 p and g 1 n paying careful attention to the experimental and theoretical uncertainties. Using the parameterizations of the helicity-dependent parton distributions obtained in the analysis, the author evolves the data to Q 2 = 5 GeV 2 , determines the first moments of the polarized structure functions of the proton and neutron, and finds agreement with the Bjorken sum rule

The anchoring effect on the spin transport properties and I-V characteristics of pentacene molecular devices suspended between nickel electrodes.

Science.gov (United States)

Caliskan, S; Laref, A

2014-07-14

Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.

Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant

OpenAIRE

You, Chun-Yeol

2012-01-01

We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic expression of the switching current density is based on the macro-spin model, there is no dependence of the exchange stiffness constant. When the switching is occurred, however, the spin configuration forms C-, S-type, or complicated domain structures. Since the spi...

Theoretical models of the spin-dependent charge-carrier dynamics in metals and semiconductors

International Nuclear Information System (INIS)

Krauss, Michael

2010-01-01

This thesis is concerned with spin-dependent carrier dynamics in semiconductors and metals. We are especially interested in the dynamics on ultrashort timescales, which can be driven by ultrashort optical excitation, and use of a theoretical description in terms of the dynamical spin-density matrix. The first part of this thesis is concerned with spin-dependent carrier dynamics in bulk GaAs. For conduction electrons in GaAs, the most important mechanisms, by which an electron spin polarization can be destroyed, are the Dyakonov-Perel and Bir-Aronov-Pikus mechanisms. For the Dyakonov-Perel effect, our treatment is the first calculation of the dynamics of the spindensity matrix for bulk GaAs. From our microsopic calculation, we extract spin-dephasing times. In particular, we can describe the dependence of the spin-dephasing time for a wide range of n-doping concentrations and explain the spin-dephasing dynamics in and out of the motional-narrowing regime. For the Bir-Aronov-Pikus mechanism, i.e., the exchange interaction of electronics with holes, approximate relaxation times for limiting cases were derived about 30 years ago. We show that these approaches provide an incomplete picture of spin relaxation, and are only valid for high or low densities, whereas the microscopic calculation is capable of explaining the electronic dynamics also for intermediate doping densities, which are most interesting for typical experiments. The spin-dependent hole dynamics in GaAs is much faster than that of electrons, because the p-like hole bands experience the spin-orbit interaction directly, rather than through the interaction with other bands. The resulting spin relaxation is sometimes referred to as an Elliott-Yafet mechanism. For the first time, we present results for the microscopic dynamics of this mechanism for holes in bulk GaAs, and we discuss the different results that may be obtained with different measurement techniques. We also analyze the importance of ''spin hot

Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

Science.gov (United States)

Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.

2018-06-01

The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.

A nonperturbative treatment of spin-dependent interactions of light and heavy quarkonia

International Nuclear Information System (INIS)

Schoeberl, F.

1986-01-01

We propose a nonrelativistic potential model with a regularized Coulomb potential at short range which leads to spin-dependent interactions which are at most as singular as 1/r. The Schroedinger equation is solved numerically including all spin-dependent interactions nonperturbatively. The predicted spectrum of light and heavy quarkonia is in remarkable agreement with experiment. Even the leptonic decay widths as well as the M1 transitions are in agreement with experiment. (Author)

Thermal relaxation and heat transport in spin ice Dy{sub 2}Ti{sub 2}O{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Klemke, Bastian; Meissner, M.; Tennant, D.A. [Helmholtz-Zentrum Berlin (Germany); Technische Universitaet Berlin (Germany); Strehlow, P. [Technische Universitaet Berlin (Germany); Physikalisch Technische Bundesanstalt, Institut Berlin (Germany); Kiefer, K. [Helmholtz-Zentrum Berlin (Germany); Grigera, S.A. [School of Physics and Astronomy, St. Andrews (United Kingdom); Instituto de Fisica de Liquidos y Sistemas Biologicos, CONICET, UNLP, La Plata (Argentina)

2011-07-01

The thermal properties of single crystalline Dy{sub 2}Ti{sub 2}O{sub 7} have been studied at temperature below 30 K and magnetic fields applied along [110] direction up to 1.5 T. Based on a thermodynamic field theory (TFT) various heat relaxation and thermal transport measurements were analysed. So we were able to present not only the heat capacity of Dy{sub 2}Ti{sub 2}O{sub 7}, but also for the first time the different contributions of the magnetic excitations and their corresponding relaxation times in the spin ice phase. In addition, the thermal conductivity and the shortest relaxation time were determined by thermodynamic analysis of steady state heat transport measurements. Finally, we were able to reproduce the temperature profiles recorded in heat pulse experiments on the basis of TFT using the previously determined heat capacity and thermal conductivity data without additional parameters. Thus, TFT has been proved to be thermodynamically consistent in describing three thermal transport experiments on different time scales. The observed temperature and field dependencies of heat capacity contributions and relaxation times indicate the magnetic excitations in the spin ice Dy{sub 2}Ti{sub 2}O{sub 7} as thermally activated monopole-antimonopole defects.

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

International Nuclear Information System (INIS)

Tang, N.Y.

2009-01-01

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.

Spin Seebeck effect and ballistic transport of quasi-acoustic magnons in room-temperature yttrium iron garnet films

Science.gov (United States)

Noack, Timo B.; Musiienko-Shmarova, Halyna Yu; Langner, Thomas; Heussner, Frank; Lauer, Viktor; Heinz, Björn; Bozhko, Dmytro A.; Vasyuchka, Vitaliy I.; Pomyalov, Anna; L’vov, Victor S.; Hillebrands, Burkard; Serga, Alexander A.

2018-06-01

We studied the transient behavior of the spin current generated by the longitudinal spin Seebeck effect (LSSE) in a set of platinum-coated yttrium iron garnet (YIG) films of different thicknesses. The LSSE was induced by means of pulsed microwave heating of the Pt layer and the spin currents were measured electrically using the inverse spin Hall effect in the same layer. We demonstrate that the time evolution of the LSSE is determined by the evolution of the thermal gradient triggering the flux of thermal magnons in the vicinity of the YIG/Pt interface. These magnons move ballistically within the YIG film with a constant group velocity, while their number decays exponentially within an effective propagation length. The ballistic flight of the magnons with energies above 20 K is a result of their almost linear dispersion law, similar to that of acoustic phonons. By fitting the time-dependent LSSE signal for different film thicknesses varying by almost an order of magnitude, we found that the effective propagation length is practically independent of the YIG film thickness. We consider this fact as strong support of a ballistic transport scenario—the ballistic propagation of quasi-acoustic magnons in room temperature YIG.

Observation of the Spin Nernst Effect in Platinum

Science.gov (United States)

Goennenwein, Sebastian

Thermoelectric effects - arising from the interplay between thermal and charge transport phenomena - have been extensively studied and are considered well established. Upon taking into account the spin degree of freedom, however, qualitatively new phenomena arise. A prototype example for these so-called magneto-thermoelectric or spin-caloritronic effects is the spin Seebeck effect, in which a thermal gradient drives a pure spin current. In contrast to their thermoelectric counterparts, not all the spin-caloritronic effects predicted from theory have yet been observed in experiment. One of these `missing' phenomena is the spin Nernst effect, in which a thermal gradient gives rise to a transverse pure spin current. We have observed the spin Nernst effect in yttrium iron garnet/platinum (YIG/Pt) thin film bilayers. Upon applying a thermal gradient within the YIG/Pt bilayer plane, a pure spin current flows in the direction orthogonal to the thermal drive. We detect this spin current as a thermopower voltage, generated via magnetization-orientation dependent spin transfer into the adjacent YIG layer. Our data shows that the spin Nernst and the spin Hall effect in in Pt have different sign, but comparable magnitude, in agreement with first-principles calculations. Financial support via Deutsche Forschungsgemeinschaft Priority Programme SPP 1538 Spin-Caloric Transport is gratefully acknowledged.

Molecular transport network security using multi-wavelength optical spins.

Science.gov (United States)

Tunsiri, Surachai; Thammawongsa, Nopparat; Mitatha, Somsak; Yupapin, Preecha P

2016-01-01

Multi-wavelength generation system using an optical spin within the modified add-drop optical filter known as a PANDA ring resonator for molecular transport network security is proposed. By using the dark-bright soliton pair control, the optical capsules can be constructed and applied to securely transport the trapped molecules within the network. The advantage is that the dark and bright soliton pair (components) can securely propagate for long distance without electromagnetic interference. In operation, the optical intensity from PANDA ring resonator is fed into gold nano-antenna, where the surface plasmon oscillation between soliton pair and metallic waveguide is established.

Nuclear-spin-dependent parity-nonconserving effects in thallium, lead and bismuth atoms

International Nuclear Information System (INIS)

Khriplovich, I.B.

1994-01-01

Nuclear-spin-dependent P-odd optical activity in atomic Tl, Pb and Bi is calculated. Its magnitude is expressed analytically through the main contribution to the optical rotation, which is independent of nuclear spin. The accuracy of results is discussed. 31 refs., 2 tabs

''Spin-dependent'' μ → e conversion on light nuclei

International Nuclear Information System (INIS)

Davidson, Sacha; Saporta, Albert; Kuno, Yoshitaka

2018-01-01

The experimental sensitivity to μ → e conversion will improve by four or more orders of magnitude in coming years, making it interesting to consider the ''spin-dependent'' (SD) contribution to the rate. This process does not benefit from the atomic-number-squared enhancement of the spin-independent (SI) contribution, but probes different operators. We give details of our recent estimate of the spin-dependent rate, expressed as a function of operator coefficients at the experimental scale. Then we explore the prospects for distinguishing coefficients or models by using different targets, both in an EFT perspective, where a geometric representation of different targets as vectors in coefficient space is introduced, and also in three leptoquark models. It is found that comparing the rate on isotopes with and without spin could allow one to detect spin-dependent coefficients that are at least a factor of few larger than the spin-independent ones. Distinguishing among the axial, tensor and pseudoscalar operators that induce the SD rate would require calculating the nuclear matrix elements for the second two. Comparing the SD rate on nuclei with an odd proton vs. odd neutron could allow one to distinguish operators involving u quarks from those involving d quarks; this is interesting because the distinction is difficult to make for SI operators. (orig.)

''Spin-dependent'' μ → e conversion on light nuclei

Energy Technology Data Exchange (ETDEWEB)

Davidson, Sacha; Saporta, Albert [IPNL, CNRS/IN2P3, Villeurbanne (France); Universite Claude Bernard Lyon 1, Villeurbanne (France); Universite de Lyon, Lyon (France); Kuno, Yoshitaka [Osaka University, Department of Physics, Toyonaka, Osaka (Japan)

2018-02-15

The experimental sensitivity to μ → e conversion will improve by four or more orders of magnitude in coming years, making it interesting to consider the ''spin-dependent'' (SD) contribution to the rate. This process does not benefit from the atomic-number-squared enhancement of the spin-independent (SI) contribution, but probes different operators. We give details of our recent estimate of the spin-dependent rate, expressed as a function of operator coefficients at the experimental scale. Then we explore the prospects for distinguishing coefficients or models by using different targets, both in an EFT perspective, where a geometric representation of different targets as vectors in coefficient space is introduced, and also in three leptoquark models. It is found that comparing the rate on isotopes with and without spin could allow one to detect spin-dependent coefficients that are at least a factor of few larger than the spin-independent ones. Distinguishing among the axial, tensor and pseudoscalar operators that induce the SD rate would require calculating the nuclear matrix elements for the second two. Comparing the SD rate on nuclei with an odd proton vs. odd neutron could allow one to distinguish operators involving u quarks from those involving d quarks; this is interesting because the distinction is difficult to make for SI operators. (orig.)

Spin dependence in the neutralization of He+ ions in metals: An analysis of different contributions

International Nuclear Information System (INIS)

Alducin, M.

2005-01-01

We study the spin polarization of the Auger electrons produced during the neutralization of He + ions in a free electron gas. In this process, one metal electron decays to the unoccupied state and a second electron is promoted to a continuum excited state. Although the spin of the decaying electron is fixed, both spins are allowed for the excited one. The states of the electrons involved in this Auger capture process are described by the spin-dependent Kohn-Sham orbitals obtained from density functional theory and the local spin approximation. The Auger capture rates indicate a strong polarization of the excited electron. In a paramagnetic free electron gas, there are two mechanisms accounting for this effect, the spin-dependent screening and the interference between indistinguishable processes when the involved electrons are in the same spin state. In a spin-polarized medium, the difference in the density of spin-up and spin-down electrons is a new ingredient to be considered. As a result, the excited electrons preferably come from the majority band, even in the case of He + ions with spin opposite to that of the majority band embedded in a low spin-polarized free electron gas

Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs

International Nuclear Information System (INIS)

Ney, A; Harris, J S Jr; Parkin, S S P

2006-01-01

The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED

Nuclear spin content and constraints on exotic spin-dependent couplings

International Nuclear Information System (INIS)

Kimball, D F Jackson

2015-01-01

There are numerous recent and ongoing experiments employing a variety of atomic species to search for couplings of atomic spins to exotic fields. In order to meaningfully compare these experimental results, the coupling of the exotic field to the atomic spin must be interpreted in terms of the coupling to electron, proton, and neutron spins. Traditionally, constraints from atomic experiments on exotic couplings to neutron and proton spins have been derived using the single-particle Schmidt model for nuclear spin. In this model, particular atomic species are sensitive to either neutron or proton spin couplings, but not both. More recently, semi-empirical models employing nuclear magnetic moment data have been used to derive new constraints for non-valence nucleons. However, comparison of such semi-empirical models to detailed large-scale nuclear shell model calculations and analysis of known physical effects in nuclei show that existing semi-empirical models cannot reliably be used to predict the spin polarization of non-valence nucleons. The results of our re-analysis of nuclear spin content are applied to searches for exotic long-range monopole–dipole and dipole–dipole couplings of nuclei leading to significant revisions of some published constraints. (paper)

Limits on Spin-Dependent WIMP-Nucleon Cross Section Obtained from the Complete LUX Exposure

Science.gov (United States)

Akerib, D. S.; Alsum, S.; Araújo, H. M.; Bai, X.; Bailey, A. J.; Balajthy, J.; Beltrame, P.; Bernard, E. P.; Bernstein, A.; Biesiadzinski, T. P.; Boulton, E. M.; Brás, P.; Byram, D.; Cahn, S. B.; Carmona-Benitez, M. C.; Chan, C.; Chiller, A. A.; Chiller, C.; Currie, A.; Cutter, J. E.; Davison, T. J. R.; Dobi, A.; Dobson, J. E. Y.; Druszkiewicz, E.; Edwards, B. N.; Faham, C. H.; Fallon, S. R.; Fiorucci, S.; Gaitskell, R. J.; Gehman, V. M.; Ghag, C.; Gilchriese, M. G. D.; Hall, C. R.; Hanhardt, M.; Haselschwardt, S. J.; Hertel, S. A.; Hogan, D. P.; Horn, M.; Huang, D. Q.; Ignarra, C. M.; Jacobsen, R. G.; Ji, W.; Kamdin, K.; Kazkaz, K.; Khaitan, D.; Knoche, R.; Larsen, N. A.; Lee, C.; Lenardo, B. G.; Lesko, K. T.; Lindote, A.; Lopes, M. I.; Manalaysay, A.; Mannino, R. L.; Marzioni, M. F.; McKinsey, D. N.; Mei, D.-M.; Mock, J.; Moongweluwan, M.; Morad, J. A.; Murphy, A. St. J.; Nehrkorn, C.; Nelson, H. N.; Neves, F.; O'Sullivan, K.; Oliver-Mallory, K. C.; Palladino, K. J.; Pease, E. K.; Reichhart, L.; Rhyne, C.; Shaw, S.; Shutt, T. A.; Silva, C.; Solmaz, M.; Solovov, V. N.; Sorensen, P.; Stephenson, S.; Sumner, T. J.; Szydagis, M.; Taylor, D. J.; Taylor, W. C.; Tennyson, B. P.; Terman, P. A.; Tiedt, D. R.; To, W. H.; Tripathi, M.; Tvrznikova, L.; Uvarov, S.; Velan, V.; Verbus, J. R.; Webb, R. C.; White, J. T.; Whitis, T. J.; Witherell, M. S.; Wolfs, F. L. H.; Xu, J.; Yazdani, K.; Young, S. K.; Zhang, C.; LUX Collaboration

2017-06-01

We present experimental constraints on the spin-dependent WIMP-nucleon elastic cross sections from the total 129.5 kg yr exposure acquired by the Large Underground Xenon experiment (LUX), operating at the Sanford Underground Research Facility in Lead, South Dakota (USA). A profile likelihood ratio analysis allows 90% C.L. upper limits to be set on the WIMP-neutron (WIMP-proton) cross section of σn=1.6 ×10-41 cm2 (σp=5 ×10-40 cm2 ) at 35 GeV c-2 , almost a sixfold improvement over the previous LUX spin-dependent results. The spin-dependent WIMP-neutron limit is the most sensitive constraint to date.

Spin transport in dangling-bond wires on doped H-passivated Si(100)

International Nuclear Information System (INIS)

Kepenekian, Mikaël; Robles, Roberto; Lorente, Nicolás; Rurali, Riccardo

2014-01-01

New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters. (paper)

Boosting spin-caloritronic effects by attractive correlations in molecular junctions.

Science.gov (United States)

Weymann, Ireneusz

2016-01-25

In nanoscopic systems quantum confinement and interference can lead to an enhancement of thermoelectric properties as compared to conventional bulk materials. For nanostructures, such as molecules or quantum dots coupled to external leads, the thermoelectric figure of merit can reach or even exceed unity. Moreover, in the presence of external magnetic field or when the leads are ferromagnetic, an applied temperature gradient can generate a spin voltage and an associated spin current flow in the system, which makes such nanostructures particularly interesting for future thermoelectric applications. In this study, by using the numerical renormalization group method, we examine the spin-dependent thermoelectric transport properties of a molecular junction involving an orbital level with attractive Coulomb correlations coupled to ferromagnetic leads. We analyze how attractive correlations affect the spin-resolved transport properties of the system and find a nontrivial dependence of the conductance and tunnel magnetoresistance on the strength and sign of those correlations. We also demonstrate that attractive correlations can lead to an enhancement of the spin thermopower and the figure of merit, which can be controlled by a gate voltage.

Spin-zero DKP equation with two time-dependent interactions

Energy Technology Data Exchange (ETDEWEB)

Saeedi, K.; Hassanabadi, H. [Shahrood University of Technology, Physics Department, Shahrood (Iran, Islamic Republic of); Zarrinkamar, S. [Islamic Azad University, Department of Basic Sciences, Garmsar Branch, Garmsar (Iran, Islamic Republic of)

2016-11-15

The Duffin-Kemmer-Petiau equation for spin-zero bosons is considered in (1 + 1) - and (2 + 1) -dimensional space-time. Some time-dependent interactions are considered within the framework and quasi-exact solutions are provided. The results are discussed via various figures. (orig.)

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2018-01-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit

2018-04-02

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Creation, transport and detection of imprinted magnetic solitons stabilized by spin-polarized current

Science.gov (United States)

Loreto, R. P.; Moura-Melo, W. A.; Pereira, A. R.; Zhang, X.; Zhou, Y.; Ezawa, M.; de Araujo, C. I. L.

2018-06-01

With the recent proposition of skyrmion utilization in racetrack memories at room temperature, skyrmionics has become a very attractive field. However, for the stability of skyrmions, it is essential to incorporate the Dzyaloshinskii-Moriya interaction (DMI) and the out-of-plane magnetic field into the system. In this work, we explore a system without these interactions. First, we propose a controlled way for the creation of magnetic skyrmions and skyrmioniums imprinted on a ferromagnetic nanotrack via a nanopatterned nanodisk with the magnetic vortex state. Then we investigate the detachment of the imprinted spin textures from the underneath of the nanodisk, as well as its transport by the spin-transfer torque imposed by spin-polarized current pulses applied in the nanotrack. A prominent feature of the moving imprinted spin texture is that its topological number Q is oscillating around the averaged value of Q = 0 as if it is a resonant state between the skyrmions with Q = ± 1 and the bubble with Q = 0 . We may call it a resonant magnetic soliton (RMS). A RMS moves along a straight line since it is free from the skyrmion Hall effect. In our studied device, the same electrodes are employed to realize the imprinted spin texture detachment and its transport. In addition, we have investigated the interaction between the RMS and a magnetic tunnel junction sensor, where the passing of the RMS in the nanotrack can be well detected. Our results would be useful for the development of novel spintronic devices based on moveable spin textures.

Calculation of the coherent transport properties of a symmetric spin nanocontact

International Nuclear Information System (INIS)

Bourahla, B.; Khater, A.; Tigrine, R.

2009-01-01

A theoretical study is presented for the coherent transport properties of a magnetic nanocontact. In particular, we study a symmetric nanocontact between two identical waveguides composed of semi-infinite spin ordered ferromagnetic chains. The coherent transmission and reflection scattering cross sections via the nanocontact, for spin waves incident from the bulk waveguide, are calculated with the use of the matching method. The inter-atomic magnetic exchange on the nanocontact is allowed to vary to investigate the consequences of magnetic softening and hardening for the calculated spectra. Transmission spectra underline the filtering properties of the nanocontact. The localized spin density of states in the nanocontact domain is also calculated, and analyzed. The results yield an understanding of the relationship between coherent conductance and the structural configuration of the nanocontact.

Magnetic anisotropy, damping, and interfacial spin transport in Pt/LSMO bilayers

Directory of Open Access Journals (Sweden)

H. K. Lee

2016-05-01

Full Text Available We report ferromagnetic resonance measurements of magnetic anisotropy and damping in epitaxial La0.7Sr0.3MnO3 (LSMO and Pt capped LSMO thin films on SrTiO3 (001 substrates. The measurements reveal large negative perpendicular magnetic anisotropy and a weaker uniaxial in-plane anisotropy that are unaffected by the Pt cap. The Gilbert damping of the bare LSMO films is found to be low α = 1.9(1 × 10−3, and two-magnon scattering is determined to be significant and strongly anisotropic. The Pt cap increases the damping by 50% due to spin pumping, which is also directly detected via inverse spin Hall effect in Pt. Our work demonstrates efficient spin transport across the Pt/LSMO interface.

Magnetic anisotropy, damping, and interfacial spin transport in Pt/LSMO bilayers

Energy Technology Data Exchange (ETDEWEB)

Lee, H. K., E-mail: hankl@uci.edu; Barsukov, I.; Yang, L.; Krivorotov, I. N. [Physics and Astronomy, University of California, Irvine, California 92697 (United States); Swartz, A. G.; Kim, B. [Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Hwang, H. Y. [Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

2016-05-15

We report ferromagnetic resonance measurements of magnetic anisotropy and damping in epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and Pt capped LSMO thin films on SrTiO{sub 3} (001) substrates. The measurements reveal large negative perpendicular magnetic anisotropy and a weaker uniaxial in-plane anisotropy that are unaffected by the Pt cap. The Gilbert damping of the bare LSMO films is found to be low α = 1.9(1) × 10{sup −3}, and two-magnon scattering is determined to be significant and strongly anisotropic. The Pt cap increases the damping by 50% due to spin pumping, which is also directly detected via inverse spin Hall effect in Pt. Our work demonstrates efficient spin transport across the Pt/LSMO interface.

Charge and spin transport in edge channels of a ν=0 quantum Hall system on the surface of topological insulators.

Science.gov (United States)

Morimoto, Takahiro; Furusaki, Akira; Nagaosa, Naoto

2015-04-10

Three-dimensional topological insulators of finite thickness can show the quantum Hall effect (QHE) at the filling factor ν=0 under an external magnetic field if there is a finite potential difference between the top and bottom surfaces. We calculate energy spectra of surface Weyl fermions in the ν=0 QHE and find that gapped edge states with helical spin structure are formed from Weyl fermions on the side surfaces under certain conditions. These edge channels account for the nonlocal charge transport in the ν=0 QHE which is observed in a recent experiment on (Bi_{1-x}Sb_{x})_{2}Te_{3} films. The edge channels also support spin transport due to the spin-momentum locking. We propose an experimental setup to observe various spintronics functions such as spin transport and spin conversion.

Spin magneto-transport in a Rashba-Dresselhaus quantum channel with single and double finger gates

Science.gov (United States)

Tang, Chi-Shung; Keng, Jia-An; Abdullah, Nzar Rauf; Gudmundsson, Vidar

2017-05-01

We address spin-resolved electronic transport properties in a Rashba-Dresselhaus quantum channel in the presence of an in-plane magnetic field. The strong Rashba-Dresselhaus effect induces an asymmetric spin-splitting energy spectrum with a spin-orbit-Zeeman gap. This asymmetric fact in energy spectrum may result in various quantum dynamic features in conductance due to the presence of finger gates. This asymmetric spin-splitting energy spectrum results in a bound state in continuum for electrons within ultralow energy regime with binding energies in order of 10-1 meV.

Influence of soliton distributions on the spin-dependent electronic ...

Indian Academy of Sciences (India)

Based on Su–Schrieffer–Heeger (SSH) Hamiltonian and using a generalized Green's function formalism, wecalculate the spin-dependent currents, the electronic transmission and tunnelling magnetoresistance (TMR). We found that the presence of a uniform distribution of the soliton centres along the molecular chain ...

Logical spin-filtering in a triangular network of quantum nanorings with a Rashba spin-orbit interaction

Science.gov (United States)

Dehghan, E.; Sanavi Khoshnoud, D.; Naeimi, A. S.

2018-01-01

The spin-resolved electron transport through a triangular network of quantum nanorings is studied in the presence of Rashba spin-orbit interaction (RSOI) and a magnetic flux using quantum waveguide theory. This study illustrates that, by tuning Rashba constant, magnetic flux and incoming electron energy, the triangular network of quantum rings can act as a perfect logical spin-filtering with high efficiency. By changing in the energy of incoming electron, at a proper value of the Rashba constant and magnetic flux, a reverse in the direction of spin can take place in the triangular network of quantum nanorings. Furthermore, the triangular network of quantum nanorings can be designed as a device and shows several simultaneous spintronic properties such as spin-splitter and spin-inverter. This spin-splitting is dependent on the energy of the incoming electron. Additionally, different polarizations can be achieved in the two outgoing leads from an originally incoming spin state that simulates a Stern-Gerlach apparatus.

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Science.gov (United States)

Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.

2014-05-01

Spin-dependent relaxation and recombination processes in γ-irradiated n-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between 31P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics is studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin-1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

Spin-dependent relativistic effect on heavy quarkonium properties in medium

International Nuclear Information System (INIS)

Dong Yubing

1997-01-01

Spin-dependent relativistic effect on the binding and dissociation of the heavy quarkonium in a thermal environment is investigated. The result shows that the interactions could influence the heavy quarkonium properties in medium

Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Mutch, Michael J. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lenahan, Patrick M. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

2016-08-08

We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

Circuit Simulation of All-Spin Logic

KAUST Repository

Alawein, Meshal

2016-01-01

. In this thesis, we propose an improved stochastic magnetization dynamics/time-dependent spin transport model based on a finite-difference scheme of both the temporal and spatial derivatives to capture the key features of ASL. The approach yields new finite

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Science.gov (United States)

Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J.

2018-01-01

We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin-injection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

Electronic transport in the quantum spin Hall state due to the presence of adatoms in graphene

Science.gov (United States)

Lima, Leandro; Lewenkopf, Caio

Heavy adatoms, even at low concentrations, are predicted to turn a graphene sheet into a topological insulator with substantial gap. The adatoms mediate the spin-orbit coupling that is fundamental to the quantum spin Hall effect. The adatoms act as local spin-orbit scatterer inducing hopping processes between distant carbon atoms giving origin to transverse spin currents. Although there are effective models that describe spectral properties of such systems with great detail, quantitative theoretical work for the transport counterpart is still lacking. We developed a multiprobe recursive Green's function technique with spin resolution to analyze the transport properties for large geometries. We use an effective tight-binding Hamiltonian to describe the problem of adatoms randomly placed at the center of the honeycomb hexagons, which is the case for most transition metals. Our choice of current and voltage probes is favorable to experiments since it filters the contribution of only one spin orientation, leading to a quantized spin Hall conductance of e2 / h . We also discuss the electronic propagation in the system by imaging the local density of states and the electronic current densities. The authors acknowledge the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Approximate spin projected spin-unrestricted density functional theory method: Application to diradical character dependences of second hyperpolarizabilities

Energy Technology Data Exchange (ETDEWEB)

Nakano, Masayoshi, E-mail: mnaka@cheng.es.osaka-u.ac.jp; Minami, Takuya, E-mail: mnaka@cheng.es.osaka-u.ac.jp; Fukui, Hitoshi, E-mail: mnaka@cheng.es.osaka-u.ac.jp; Yoneda, Kyohei, E-mail: mnaka@cheng.es.osaka-u.ac.jp; Shigeta, Yasuteru, E-mail: mnaka@cheng.es.osaka-u.ac.jp; Kishi, Ryohei, E-mail: mnaka@cheng.es.osaka-u.ac.jp [Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Champagne, Benoît; Botek, Edith [Laboratoire de Chimie Théorique, Facultés Universitaires Notre-Dame de la Paix (FUNDP), rue de Bruxelles, 61, 5000 Namur (Belgium)

2015-01-22

We develop a novel method for the calculation and the analysis of the one-electron reduced densities in open-shell molecular systems using the natural orbitals and approximate spin projected occupation numbers obtained from broken symmetry (BS), i.e., spin-unrestricted (U), density functional theory (DFT) calculations. The performance of this approximate spin projection (ASP) scheme is examined for the diradical character dependence of the second hyperpolarizability (γ) using several exchange-correlation functionals, i.e., hybrid and long-range corrected UDFT schemes. It is found that the ASP-LC-UBLYP method with a range separating parameter μ = 0.47 reproduces semi-quantitatively the strongly-correlated [UCCSD(T)] result for p-quinodimethane, i.e., the γ variation as a function of the diradical character.

Effect of asymmetric interface on charge and spin transport across two dimensional electron gas with Dresselhaus spin-orbit coupling/ferromagnet junction

Science.gov (United States)

Srisongmuang, B.; Pasanai, K.

2018-04-01

We theoretically studied the effect of interfacial scattering on the transport of charge and spin across the junction of a two-dimensional electron gas with Dresselhaus spin-orbit coupling and ferromagnetic material junction, via the conductance (G) and the spin-polarization of the conductance spectra (P) using the scattering method. At the interface, not only were the effects of spin-conserving (Z0) and spin-flip scattering (Zf) considered, but also the interfacial Rashba spin-orbit coupling scattering (ZRSOC) , which was caused by the asymmetry of the interface, was taken into account, and all of them were modeled by the delta potential. It was found that G was suppressed with increasing Z0 , as expected. Interestingly, a particular value of Zf can cause G and P to reach a maximum value. In particular, ZRSOC plays a crucial role to reduce G and P in the metallic limit, but its influence on the tunneling limit was quite weak. On the other hand, the effect of ZRSOC was diminished in the tunneling limit of the magnetic junction.

Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells

International Nuclear Information System (INIS)

Balocchi, A; Amand, T; Renucci, P; Duong, Q H; Marie, X; Wang, G; Liu, B L

2013-01-01

Time-resolved optical spectroscopy experiments in (111)-oriented GaAs/AlGaAs quantum wells (QWs) show a strong electric field dependence of the conduction electron spin relaxation anisotropy. This results from the interplay between the Dresselhaus and Rashba spin splitting in this system with C 3v symmetry. By varying the electric field applied perpendicular to the QW plane from 20 to 50 kV cm −1 the anisotropy of the spin relaxation time parallel (τ s ∥ ) and perpendicular (τ s ⊥ ) to the growth axis can be first canceled and eventually inversed with respect to the one usually observed in III–V zinc-blende QW (τ s ⊥ = 2τ s ∥ ). This dependence stems from the nonlinear contributions of the k-dependent conduction band spin splitting terms which begin to play the dominant spin relaxing role while the linear Dresselhaus terms are compensated by the Rashba ones through the applied bias. A spin density matrix model for the conduction band spin splitting including both linear and cubic terms of the Dresselhaus Hamiltonian is used which allows a quantitative description of the measured electric field dependence of the spin relaxation anisotropy. The existence of an isotropic point where the spin relaxation tensor reduces to a scalar is predicted and confirmed experimentally. The spin splitting compensation electric field and collision processes type in the QW can be likewise directly extracted from the model without complementary measurements. (paper)

Muonium spin exchange as a Poisson process: magnetic field dependence in transverse fields

International Nuclear Information System (INIS)

Senba, Masayoshi; British Columbia Univ., Vancouver, BC

1993-01-01

The muonium spin exchange has been investigated as a function of transverse magnetic field strength, where the Poisson nature of collisions is exploited to simplify the calculation. In intermediate fields where the so-called two-frequency muonium signal is observed, the muonium relaxation due to spin exchange is 1.5 times faster than in low fields. In even higher fields, the observed relaxation rate drops back to the low field value. Since the relaxation rate due to a chemical reaction is field independent, such a distinct field dependence in spin exchange can be used in distinguishing experimentally spin exchange from chemical reactions. The time evolution of the muon spin polarization in the presence of muonium spin exchange has been expressed in a simple analytical closed form. (author)

Quantitative determination of spin-dependent quasiparticle renormalization in ferromagnetic 3d metals

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Barriga, Jaime; Varykhalov, Andrei; Fink, Joerg; Rader, Oliver; Duerr, Hermann; Eberhardt, Wolfgang [Bessy GmbH, Berlin (Germany)

2008-07-01

Spin dependent low-energy electronic excitations in 3d ferromagnets are of special interest due to the need of a microscopic understanding of the electronic structure of solids. Low-energy electrons (or holes) become dressed by a cloud of excitations resulting in quasiparticles of a finite lifetime and a different effective mass. These type of excitations have been studied by many theoretical methods, and it has been found that because of many body effects no sharp quasiparticle peaks exist for binding energies larger than 2 eV. Interestingly, it has been shown that strong correlation effects could particularly affect majority spin electrons, leading to a pronounced damping of quasiparticles at binding energies around 2 eV and above. In order to give an experimental corroboration to these findings, we have performed a systematic study of the spin-dependent quasiparticle lifetime and band structure of ferromagnetic 3d transition metal surfaces by means of spin and angle-resolved photoemission spectroscopy. On hcp Co(0001), fcc Ni(111) and bcc Fe(110), we have found a more pronounced renormalization of the majority spin quasiparticle spectral weight going from Ni to Co which are both strong ferromagnets. For Fe, a weak ferromagnet, such a process becomes more prominent in the minority channel.

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Science.gov (United States)

Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

2017-12-01

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

Ballistic transport of spin waves incident from cobalt leads across cobalt–gadolinium alloy nanojunctions

International Nuclear Information System (INIS)

Ashokan, V.; Abou Ghantous, M.; Ghader, D.; Khater, A.

2014-01-01

Calculations are presented for the scattering and ballistic transport of spin waves (SW) incident from cobalt leads, on ultrathin ferrimagnetic cobalt–gadolinium ‥Co][Co (1−c) Gd (c) ] ℓ [Co‥ nanojunction systems. The nanojunction [Co (1−c) Gd (c) ] ℓ itself is a randomly disordered alloy of thickness ℓ hcp lattice planes between matching hcp planes of the Co leads, at known stable concentrations c≤0.5 for this alloy system. To compute the spin dynamics, and the SW scattering and ballistic transport, this alloy nanojunction is modeled in the virtual crystal approximation (VCA), valid in particular at the length scale of the nanojunction for submicroscopic SW wavelengths. The phase field matching theory (PFMT) is applied to compute the localized and resonant magnons on the nanojunction. These magnons, characteristic of the embedded nanostructure, propagate in its symmetry plane with spin precession amplitudes that decay or match the spin wave states in the semi-infinite leads. The eigenvectors of these magnon modes are calculated for certain cases to illustrate the spin precession configurations on the nanojunction. The VCA-PFMT approach is also used to calculate the reflection and transmission spectra for the spin waves incident from the Co leads on the nanojunction. The results demonstrate resonance assisted maxima for the ballistic SW transmission spectra due to interactions between the incident spin waves and the nanojunction magnon modes. These properties are general for variable nanojunction thicknesses and alloy stable concentrations c≤0.5. In particular, the positions of the resonance assisted maxima of spin wave transmission can be modified with nanojunction thickness and alloy concentration. - Highlights: • Model is presented for spin wave scattering at CoGd disordered alloy nanojunctions. • Computations yield the localized and resonant magnon modes on the nanojunctions. • The spin waves ballistic reflection and transmission

Spin-dependent recombination processes in wide band gap II-Mn-VI compounds

International Nuclear Information System (INIS)

Godlewski, M.; Yatsunenko, S.; Khachapuridze, A.; Ivanov, V.Yu.

2004-01-01

Mechanisms of optical detection of magnetic resonance in wide band gap II-Mn-VI diluted magnetic semiconductor (DMS) are discussed based on the results of photoluminescence (PL), PL kinetics, electron spin resonance (ESR) and optically detected magnetic resonance (ODMR) and optically detected cyclotron resonance (ODCR) investigations. Spin-dependent interactions between localized spins of Mn 2+ ions and spins/magnetic moments of free, localized or bound carriers are responsible for the observed ODMR signals. We conclude that these interactions are responsible for the observed rapid shortening of the PL decay time of 4 T 1 → 6 A 1 intra-shell emission of Mn 2+ ions and also for the observed delocalization of excitons in low dimensional structures

Investigation of the difference between spin Hall magnetoresistance rectification and spin pumping from the viewpoint of magnetization dynamics

Science.gov (United States)

Zhang, Qihan; Fan, Xiaolong; Zhou, Hengan; Kong, Wenwen; Zhou, Shiming; Gui, Y. S.; Hu, C.-M.; Xue, Desheng

2018-02-01

Spin pumping (SP) and spin rectification due to spin Hall magnetoresistance (SMR) can result in a dc resonant voltage signal, when magnetization in ferromagnetic insulator/nonmagnetic structures experiences ferromagnetic resonance. Since the two effects are often interrelated, quantitative identification of them is important for studying the dynamic nonlocal spin transport through an interface. In this letter, the key difference between SP and SMR rectification was investigated from the viewpoint of spin dynamics. The phase-dependent nature of SMR rectification, which is the fundamental characteristic distinguishing it from SP, was tested by a well-designed experiment. In this experiment, two identical yttrium iron garnet/Pt strips with a π phase difference in dynamic magnetization show the same SP signals and inverse SMR signals.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.; Chshiev, M.; Manchon, Aurelien

2015-01-01

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.

2015-02-11

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Density matrix-based time-dependent configuration interaction approach to ultrafast spin-flip dynamics

Science.gov (United States)

Wang, Huihui; Bokarev, Sergey I.; Aziz, Saadullah G.; Kühn, Oliver

2017-08-01

Recent developments in attosecond spectroscopy yield access to the correlated motion of electrons on their intrinsic timescales. Spin-flip dynamics is usually considered in the context of valence electronic states, where spin-orbit coupling is weak and processes related to the electron spin are usually driven by nuclear motion. However, for core-excited states, where the core-hole has a nonzero angular momentum, spin-orbit coupling is strong enough to drive spin-flips on a much shorter timescale. Using density matrix-based time-dependent restricted active space configuration interaction including spin-orbit coupling, we address an unprecedentedly short spin-crossover for the example of L-edge (2p→3d) excited states of a prototypical Fe(II) complex. This process occurs on a timescale, which is faster than that of Auger decay (∼4 fs) treated here explicitly. Modest variations of carrier frequency and pulse duration can lead to substantial changes in the spin-state yield, suggesting its control by soft X-ray light.

Effect of spin reorientation on magnetocaloric and transport properties of NdAl{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Souza, M.V. de, E-mail: marcos_vinicios@hotmail.com [Núcleo de Pós-Graduação em Física, Campus Prof. José Aloísio de Campos, UFS, 49100-000 São Cristóvão, SE (Brazil); Silva, J.A. da [Núcleo de Pós-Graduação em Física, Campus Prof. José Aloísio de Campos, UFS, 49100-000 São Cristóvão, SE (Brazil); Silva, L.S. [Núcleo de Pós-Graduação em Física, Campus Prof. José Aloísio de Campos, UFS, 49100-000 São Cristóvão, SE (Brazil); Instituto Federal de Tocantins, IFTO – Campus Colinas do Tocantins, AV. Bernardo Sayao S/N, Chácara Raio de Sol, Setor Santa Maria, CEP 77760-000 Colinas do Tocantins, TO (Brazil)

2017-01-01

We report the magneto-thermal and resistive properties of rare-earth dialuminide NdAl{sub 2}, including spin reorientation transition. To this purpose, we used a theoretical model that considers the interactions of exchange and Zeeman, besides the anisotropy due to the electrical crystal field. The theoretical results obtained were compared to experimental data of the NdAl{sub 2} in single crystal and bulk forms. Explicitly, we have calculated the anisotropic variation of magnetic entropy with the magnetic field oriented along the three principal crystallographic directions: [100], [110], and [111] of NdAl{sub 2} single crystal, where a signature of the spin reorientation is observed in the [110] and [111] directions. Moreover, of magnetoresistivity we consider the applied magnetic field along the crystallographic directions [100] and [110]. In turn, for the polycrystalline form, the good agreement between theory and experiment confirms the presence of spin reorientation, which was predicted theoretically in magnetization curves. - Highlights: • Modeling of the thermodynamics quantities in NdAl{sub 2} single crystal and policrystal. • Modeling of the transport properties in NdAl{sub 2} single crystal. • Effect of reorientation of spin on caloric and transport properties.

Two-level system in spin baths: Non-adiabatic dynamics and heat transport

Science.gov (United States)

Segal, Dvira

2014-04-01

We study the non-adiabatic dynamics of a two-state subsystem in a bath of independent spins using the non-interacting blip approximation, and derive an exact analytic expression for the relevant memory kernel. We show that in the thermodynamic limit, when the subsystem-bath coupling is diluted (uniformly) over many (infinite) degrees of freedom, our expression reduces to known results, corresponding to the harmonic bath with an effective, temperature-dependent, spectral density function. We then proceed and study the heat current characteristics in the out-of-equilibrium spin-spin-bath model, with a two-state subsystem bridging two thermal spin-baths of different temperatures. We compare the behavior of this model to the case of a spin connecting boson baths, and demonstrate pronounced qualitative differences between the two models. Specifically, we focus on the development of the thermal diode effect, and show that the spin-spin-bath model cannot support it at weak (subsystem-bath) coupling, while in the intermediate-strong coupling regime its rectifying performance outplays the spin-boson model.

Two-level system in spin baths: Non-adiabatic dynamics and heat transport

Energy Technology Data Exchange (ETDEWEB)

Segal, Dvira [Chemical Physics Theory Group, Department of Chemistry, University of Toronto, 80 Saint George St., Toronto, Ontario M5S 3H6 (Canada)

2014-04-28

We study the non-adiabatic dynamics of a two-state subsystem in a bath of independent spins using the non-interacting blip approximation, and derive an exact analytic expression for the relevant memory kernel. We show that in the thermodynamic limit, when the subsystem-bath coupling is diluted (uniformly) over many (infinite) degrees of freedom, our expression reduces to known results, corresponding to the harmonic bath with an effective, temperature-dependent, spectral density function. We then proceed and study the heat current characteristics in the out-of-equilibrium spin-spin-bath model, with a two-state subsystem bridging two thermal spin-baths of different temperatures. We compare the behavior of this model to the case of a spin connecting boson baths, and demonstrate pronounced qualitative differences between the two models. Specifically, we focus on the development of the thermal diode effect, and show that the spin-spin-bath model cannot support it at weak (subsystem-bath) coupling, while in the intermediate-strong coupling regime its rectifying performance outplays the spin-boson model.

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

Energy Technology Data Exchange (ETDEWEB)

Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

2015-05-11

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

International Nuclear Information System (INIS)

Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

2015-01-01

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.

Science.gov (United States)

Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P

2016-10-26

The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.

Effect of Twisting and Stretching on Magneto Resistance and Spin Filtration in CNTs

Directory of Open Access Journals (Sweden)

Anil Kumar Singh

2017-08-01

Full Text Available Spin-dependent quantum transport properties in twisted carbon nanotube and stretched carbon nanotube are calculated using density functional theory (DFT and non-equilibrium green’s function (NEGF formulation. Twisting and stretching have no effect on spin transport in CNTs at low bias voltages. However, at high bias voltages the effects are significant. Stretching restricts any spin-up current in antiparallel configuration (APC, which results in higher magneto resistance (MR. Twisting allows spin-up current almost equivalent to the pristine CNT case, resulting in lower MR. High spin filtration is observed in PC and APC for pristine, stretched and twisted structures at all applied voltages. In APC, at low voltages spin filtration in stretched CNT is higher than in pristine and twisted ones, with pristine giving a higher spin filtration than twisted CNT.

Spin-dependent electron emission from metals in the neutralization of He+ ions

International Nuclear Information System (INIS)

Alducin, M.; Roesler, M.; Juaristi, J.I.; Muino, R. Diez; Echenique, P.M.

2005-01-01

We calculate the spin-polarization of electrons emitted in the neutralization of He + ions interacting with metals. All stages of the emission process are included: the spin-dependent perturbation induced by the projectile, the excitation of electrons in Auger neutralization processes, the creation of a cascade of secondaries, and the escape of the electrons through the surface potential barrier. The model allows us to explain in quantitative terms the measured spin-polarization of the yield in the interaction of spin-polarized He + ions with paramagnetic surfaces, and to disentangle the role played by each of the involved mechanisms. We show that electron-electron scattering processes at the surface determine the spin-polarization of the total yield. High energy emitted electrons are the ones providing direct information on the He + ion neutralization process and on the electronic properties of the surface

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Science.gov (United States)

Teng, Lihua; Jiang, Tianran; Wang, Xia; Lai, Tianshu

2018-05-01

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov-Perel' (DP) mechanism can be more important than the Bir-Aronov-Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.

Topological spin transport of photons: the optical Magnus effect and Berry phase

International Nuclear Information System (INIS)

Bliokh, K.Yu.; Bliokh, Yu.P.

2004-01-01

The Letter develops a modified geometrical optics (GO) of smoothly inhomogeneous isotropic medium, which takes into account two topological phenomena: Berry phase and the optical Magnus effect. Taking into account the correspondence between a quasi-classical motion of a quantum particle with a spin and GO of an electromagnetic wave in smoothly inhomogeneous media, we have introduced the standard gauge potential associated with the degeneracy in the wave momentum space. This potential corresponds to the magnetic-monopole-like field (Berry curvature), which causes the topological spin (polarization) transport of photons. The deviations of waves of right-hand and left-hand polarization occur in the opposite directions and orthogonally to the principal direction of motion. This produces a spin current directed across the principal motion. The situation is similar to the anomalous Hall effect for electrons. In addition, a simple scheme of the experiment allowing one to observe the topological spin splitting of photons has been suggested

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

Science.gov (United States)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

International Nuclear Information System (INIS)

Xiao, Xianbo; Nie, Wenjie; Chen, Zhaoxia; Zhou, Guanghui; Li, Fei

2014-01-01

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

Energy Technology Data Exchange (ETDEWEB)

Xiao, Xianbo, E-mail: xxb-11@hotmail.com; Nie, Wenjie [School of Computer, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China); Chen, Zhaoxia [School of Mechatronics Engineering, East China Jiaotong University, Nanchang 330013 (China); Zhou, Guanghui [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081 (China); Li, Fei, E-mail: wltlifei@sina.com [Office of Scientific Research, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China)

2014-06-14

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

International Nuclear Information System (INIS)

Zou Jianfei; Jin Guojun; Ma Yuqiang

2009-01-01

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

Science.gov (United States)

Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

2009-03-25

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Angle-dependent spin-wave resonance spectroscopy of (Ga,Mn)As films

Science.gov (United States)

Dreher, L.; Bihler, C.; Peiner, E.; Waag, A.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

2013-06-01

A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study [C. Bihler , Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.79.045205 79, 045205 (2009)], this formalism accounts for elliptical magnetization precession and magnetic properties arbitrarily varying across the layer thickness, including the magnetic anisotropy parameters, the exchange stiffness, the Gilbert damping, and the saturation magnetization. To demonstrate the usefulness of our modeling approach, we experimentally study a set of (Ga,Mn)As samples grown by low-temperature molecular-beam epitaxy by means of angle-dependent standing spin-wave resonance spectroscopy and electrochemical capacitance-voltage measurements. By applying our modeling approach, the angle dependence of the spin-wave resonance data can be reproduced in a simulation with one set of simulation parameters for all external field orientations. We find that the approximately linear gradient in the out-of-plane magnetic anisotropy is related to a linear gradient in the hole concentrations of the samples.

Bipolar spintronics: from spin injection to spin-controlled logic

International Nuclear Information System (INIS)

Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

2007-01-01

An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

Gate-Driven Pure Spin Current in Graphene

Science.gov (United States)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

Spin-dependent level density in interacting Boson-Fermion-Fermion model of the Odd-Odd Nucleus 196Au

International Nuclear Information System (INIS)

Kabashi, S.; Bekteshi, S.; Ahmetaj, S.; Shaqiri, Z.

2009-01-01

The level density of the odd-odd nucleus 196 Au is investigated in the interacting boson-fermion-fermion model (IBFFM) which accounts for collectivity and complex interaction between quasiparticle and collective modes.The IBFFM spin-dependent level densities show high-spin reduction with respect to Bethe formula.This can be well accounted for by a modified spin-dependent level density formula. (authors)

Nonequilibrium dynamics of a mixed spin-1/2 and spin-3/2 Ising ferrimagnetic system with a time dependent oscillating magnetic field source

Energy Technology Data Exchange (ETDEWEB)

Vatansever, Erol [Dokuz Eylül University, Graduate School of Natural and Applied Sciences, TR-35160 Izmir (Turkey); Polat, Hamza, E-mail: hamza.polat@deu.edu.tr [Department of Physics, Dokuz Eylül University, TR-35160 Izmir (Turkey)

2015-10-15

Nonequilibrium phase transition properties of a mixed Ising ferrimagnetic model consisting of spin-1/2 and spin-3/2 on a square lattice under the existence of a time dependent oscillating magnetic field have been investigated by making use of Monte Carlo simulations with a single-spin flip Metropolis algorithm. A complete picture of dynamic phase boundary and magnetization profiles have been illustrated and the conditions of a dynamic compensation behavior have been discussed in detail. According to our simulation results, the considered system does not point out a dynamic compensation behavior, when it only includes the nearest-neighbor interaction, single-ion anisotropy and an oscillating magnetic field source. As the next-nearest-neighbor interaction between the spins-1/2 takes into account and exceeds a characteristic value which sensitively depends upon values of single-ion anisotropy and only of amplitude of external magnetic field, a dynamic compensation behavior occurs in the system. Finally, it is reported that it has not been found any evidence of dynamically first-order phase transition between dynamically ordered and disordered phases, which conflicts with the recently published molecular field investigation, for a wide range of selected system parameters. - Highlights: • Spin-1/2 and spin-3/2 Ising ferrimagnetic model is examined. • The system is exposed to time-dependent magnetic field. • Kinetic Monte Carlo simulation technique is used. • Any evidence of first-order phase transition has not been found.

Valley photonic crystals for control of spin and topology.

Science.gov (United States)

Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang

2017-03-01

Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley-spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.

Photon energy dependence of photo-induced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

Energy Technology Data Exchange (ETDEWEB)

Isella, Giovanni, E-mail: giovanni.isella@polimi.it; Bottegoni, Federico; Ferrari, Alberto; Finazzi, Marco; Ciccacci, Franco [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2015-06-08

We report the photon energy dependence of photo-induced inverse spin Hall effect (ISHE) in Pt/GaAs and Pt/Ge Schottky junctions. The experimental results are compared with a spin drift-diffusion model, which highlights the role played by the different spin lifetime in the two semiconductors, in determining the energy dependence of the ISHE signal detected in the Pt layer. The good qualitative agreement between experiments and modelling indicates that photo-induced ISHE can be used as a tool to characterize spin lifetime in semiconductors.

Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

Science.gov (United States)

Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

2017-07-01

Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

Spin-polarized transport properties of a pyridinium-based molecular spintronics device

Science.gov (United States)

Zhang, J.; Xu, B.; Qin, Z.

2018-05-01

By applying a first-principles approach based on non-equilibrium Green's functions combined with density functional theory, the transport properties of a pyridinium-based "radical-π-radical" molecular spintronics device are investigated. The obvious negative differential resistance (NDR) and spin current polarization (SCP) effect, and abnormal magnetoresistance (MR) are obtained. Orbital reconstruction is responsible for novel transport properties such as that the MR increases with bias and then decreases and that the NDR being present for both parallel and antiparallel magnetization configurations, which may have future applications in the field of molecular spintronics.

Static spin-dependent forces between heavy quarks in the classical approximation to dual QCD

International Nuclear Information System (INIS)

Baker, M.; Ball, J.S.; Zachariasen, F.

1991-01-01

We compute the static spin-dependent forces V S (R) (proportional to σ 1 ·σ 2 ) and V T (R) (proportional to 3σ 1 ·Rσ 2 ·R-σ 1 ·σ 2 ) between two quarks separated by R. This is done by treating the (weak) spin-dependent effects as a perturbation on the spin-independent potentials and fields computed earlier for dual QCD. What results is a definite prediction for the heavy-quark potentials which are similar to, but different in form from, those used in phenomenological treatments. Calculations of the masses and splittings of heavy-quark states using our potentials will provide a further test of the dual superconductor picture of QCD

Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

Science.gov (United States)

Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

2013-08-27

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

Dynamic compensation temperatures in a mixed spin-1 and spin-3/2 Ising system under a time-dependent oscillating magnetic field

Energy Technology Data Exchange (ETDEWEB)

Keskin, Mustafa, E-mail: keskin@erciyes.edu.t [Department of Physics, Erciyes University, 38039 Kayseri (Turkey); Kantar, Ersin [Institute of Science, Erciyes University, 38039 Kayseri (Turkey)

2010-09-15

We study the existence of dynamic compensation temperatures in the mixed spin-1 and spin-3/2 Ising ferrimagnetic system Hamiltonian with bilinear and crystal-field interactions in the presence of a time-dependent oscillating external magnetic field on a hexagonal lattice. We employ the Glauber transitions rates to construct the mean-field dynamic equations. We investigate the time dependence of an average sublattice magnetizations, the thermal behavior of the dynamic sublattice magnetizations and the total magnetization. From these studies, we find the phases in the system, and characterize the nature (continuous or discontinuous) of transitions as well as obtain the dynamic phase transition (DPT) points and the dynamic compensation temperatures. We also present dynamic phase diagrams, including the compensation temperatures, in the five different planes. A comparison is made with the results of the available mixed spin Ising systems.

Dynamic compensation temperatures in a mixed spin-1 and spin-3/2 Ising system under a time-dependent oscillating magnetic field

International Nuclear Information System (INIS)

Keskin, Mustafa; Kantar, Ersin

2010-01-01

We study the existence of dynamic compensation temperatures in the mixed spin-1 and spin-3/2 Ising ferrimagnetic system Hamiltonian with bilinear and crystal-field interactions in the presence of a time-dependent oscillating external magnetic field on a hexagonal lattice. We employ the Glauber transitions rates to construct the mean-field dynamic equations. We investigate the time dependence of an average sublattice magnetizations, the thermal behavior of the dynamic sublattice magnetizations and the total magnetization. From these studies, we find the phases in the system, and characterize the nature (continuous or discontinuous) of transitions as well as obtain the dynamic phase transition (DPT) points and the dynamic compensation temperatures. We also present dynamic phase diagrams, including the compensation temperatures, in the five different planes. A comparison is made with the results of the available mixed spin Ising systems.

Spin transport in non-inertial frame

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2014-09-01

The influence of acceleration and rotation on spintronic applications is theoretically investigated. In our formulation, considering a Dirac particle in a non-inertial frame, different spin related aspects are studied. The spin current appearing due to the inertial spin–orbit coupling (SOC) is enhanced by the interband mixing of the conduction and valence band states. Importantly, one can achieve a large spin current through the k{sup →}.p{sup →} method in this non-inertial frame. Furthermore, apart from the inertial SOC term due to acceleration, for a particular choice of the rotation frequency, a new kind of SOC term can be obtained from the spin rotation coupling (SRC). This new kind of SOC is of Dresselhaus type and controllable through the rotation frequency. In the field of spintronic applications, utilizing the inertial SOC and SRC induced SOC term, theoretical proposals for the inertial spin filter, inertial spin galvanic effect are demonstrated. Finally, one can tune the spin relaxation time in semiconductors by tuning the non-inertial parameters.