Direct measurement of graphene contact resistivity to pre-deposited metal in buried contact test structure

KAUST Repository

Qaisi, Ramy M.

2013-08-01

We demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces. We also observe excellent contact resistivity 1 μO-cm2 without any additional surface modification suggesting that the intrinsic Au-graphene contact is sufficient for achieving devices with low contact resistance. The chemical mechanical polishing less test structure and data described herein highlights an ideal methodology for systematic screening and engineering of graphene-metal contact resistivity to enable low power high speed carbon electronics. © 2013 IEEE.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

2010-01-01

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.

2010-04-27

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Electro-thermal analysis of contact resistance

Science.gov (United States)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

Effect of Contact Pressure on the Resistance Contact Value and Temperature Changes in Copper Busbar Connection

Directory of Open Access Journals (Sweden)

Agus Risdiyanto

2012-12-01

Full Text Available This paper discussed the influence of tightness or contacts pressure on copper busbar joints to determine changes in the value of the initial contact resistance and the maximum temperature at the joint due to high current load. The test sample was copper busbar 3 x 30 mm with configuration of bolted overlapping joint. Increasing contact pressure at the joint was measured to find out its effect on the value of contact resistance. The applied pressure was 6 to 36 MPa. Procedure of contact resistance measurement refer to the ASTM B539 standard using four-wire method. The sample subsequently loaded with the current of 350 A for 60 minutes and the maximum temperature at the joint was measured. The result showed that increasing contact pressure at the busbar joint will reduce the contact resistance and maximum temperature. The increase of contact pressure from 6 to 30 MPa causes decreasing contact resistance from 16 μΩ to 11 μΩ. Further increasing of contact pressure more than 30 MPa did not affect the contact resistance significantly. The lowest temperatur of busbar joint of 54°C was reached at a contact pressure of 36 Mpa.

Method of separate determination of high-ohmic sample resistance and contact resistance

Directory of Open Access Journals (Sweden)

Vadim A. Golubiatnikov

2015-09-01

Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

The effect of electrode contact resistance and capacitive coupling on Complex Resistivity measurements

DEFF Research Database (Denmark)

Ingeman-Nielsen, Thomas

2006-01-01

The effect of electrode contact resistance and capacitive coupling on complex resistivity (CR) measurements is studied in this paper. An equivalent circuit model for the receiver is developed to describe the effects. The model shows that CR measurements are severely affected even at relatively lo...... with the contact resistance artificially increased by resistors. The results emphasize the importance of keeping contact resistance low in CR measurements....

Bias dependent specic contact resistance of phase change material to metal contacts

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha; Wolters, Robertus A.M.

2010-01-01

Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

Science.gov (United States)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.

2013-05-09

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene\\'s most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo

2016-12-28

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2009-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

Temperature dependence of contact resistance at metal/MWNT interface

Energy Technology Data Exchange (ETDEWEB)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com [Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803 (Korea, Republic of)

2016-07-11

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

Resistance switching in silver - manganite contacts

International Nuclear Information System (INIS)

Gomez-Marlasca, F; Levy, P

2009-01-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Resistance switching in silver - manganite contacts

Energy Technology Data Exchange (ETDEWEB)

Gomez-Marlasca, F [Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires (Argentina); Levy, P, E-mail: levy@cnea.gov.a

2009-05-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires

International Nuclear Information System (INIS)

Blanchard, Paul; Bertness, Kris A; Harvey, Todd; Sanford, Norman

2014-01-01

Contact resistivity ρ c is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nanowires (NWs), measuring ρ c of contacts to NWs can be particularly challenging. In this work, Si-doped n-GaN NWs were grown by molecular beam epitaxy. Four-contact structures with 20 nm Ti/200 nm Al contacts were fabricated on individual NWs by photolithography, and the contacts were annealed to achieve ohmic behavior. Two-point resistances R 23  and four-point collinear resistances R 23collinear  were measured between the middle two contacts on each NW. These resistances were then modeled by taking into account the non-uniform distribution of current flow along the length of each contact. Contrary to the assumption that the resistance difference R 23 −R 23collinear  is equal to the total contact resistance R c , the distributed-current-flow contact model shows that R 23 −R 23collinear  ≪ R c when ρ c is sufficiently small. Indeed, the measured R 23 −R 23collinear  was so small in these devices that it was within the measurement uncertainty, meaning that it was not possible to directly calculate ρ c from these data. However, it was possible to calculate an upper bound on ρ c for each device based on the largest possible value of R 23 −R 23collinear . In addition, we took into account the large uncertainties in the NW transport properties by numerically maximizing ρ c with respect to the uncertainty range of each measured and assumed parameter in the contact model. The resulting upper limits on ρ c ranged from 4.2 × 10 −6  to 7.6 × 10 −6  Ω cm 2 , indicating that 20 nm Ti/200 nm Al is a good choice of ohmic contact for moderately-doped n-GaN NWs. The measurement and numerical analysis demonstrated here offer a general approach to modeling ohmic contact resistivity via NW four

Contact resistance at ceramic interfaces and its dependence on mechanical load

DEFF Research Database (Denmark)

Koch, Søren; Hendriksen, P.V.

2004-01-01

Low contact resistance between individual components is important for solid oxide fuel cell stacks if high performance is to be achieved. Several mechanisms may result in high contact resistance, e.g., current constriction due to low area of contact and formation of resistive phases between...... the components. In this study, the importance of current constriction due to limited area of contact at an interface is investigated by comparing the characteristics of contacts between LSM pellets with different surface finish. The load behaviour of the contact resistance has been investigated and a power law...... of the contact resistance was calculated using a simple model describing the variation of the contact area with load based on the measured surface roughness. Good agreement between the calculations and the experimentally observed resistances was found. (C) 2004 Elsevier B.V. All rights reserved....

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

2018-01-01

that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

Effects of contact resistance on electrical conductivity measurements of SiC-based materials

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Thomsen, E.C.; Henager, C.H., E-mail: chuck.henager@pnnl.gov

2013-11-15

A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (R{sub c}) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ∼973 K. The R{sub c}-values behaved similarly for each type of metallic electrode: R{sub c} > ∼1000 Ω cm{sup 2} at RT, decreasing continuously to ∼1–10 Ω cm{sup 2} at 973 K. The temperature dependence of the inverse R{sub c} indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ∼0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

Ultra-low contact resistance in graphene devices at the Dirac point

Science.gov (United States)

Anzi, Luca; Mansouri, Aida; Pedrinazzi, Paolo; Guerriero, Erica; Fiocco, Marco; Pesquera, Amaia; Centeno, Alba; Zurutuza, Amaia; Behnam, Ashkan; Carrion, Enrique A.; Pop, Eric; Sordan, Roman

2018-04-01

Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 Ω \\cdot μ m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 Ω \\cdot μ m was obtained under such conditions). The ‘holey’ Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m-1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.

Effects of pressure and temperature on thermal contact resistance between different materials

Directory of Open Access Journals (Sweden)

Zhao Zhe

2015-01-01

Full Text Available To explore whether pressure and temperature can affect thermal contact resistance, we have proposed a new experimental approach for measurement of the thermal contact resistance. Taking the thermal contact resistance between phenolic resin and carbon-carbon composites, cuprum, and aluminum as the examples, the influence of the thermal contact resistance between specimens under pressure is tested by experiment. Two groups of experiments are performed and then an analysis on influencing factors of the thermal contact resistance is presented in this paper. The experimental results reveal that the thermal contact resistance depends not only on the thermal conductivity coefficient of materials, but on the interfacial temperature and pressure. Furthermore, the thermal contact resistance between cuprum and aluminum is more sensitive to pressure and temperature than that between phenolic resin and carbon-carbon composites.

Method for making low-resistivity contacts to high T/sub c/ superconductors

International Nuclear Information System (INIS)

Ekin, J.W.; Panson, A.J.; Blankenship, B.A.

1988-01-01

A method for making low-resistivity contacts to high T/sub c/ superconductors has been developed, which has achieved contact surface resistivities less than 10 μΩ cm 2 at 76 K and does not require sample heating above ∼150 0 C. This is an upper limit for the contact resistivity obtained at high current densities up to 10 2 --10 3 A/cm 2 across the contact interface. At lower measuring current densities the contact resistivities were lower and the voltage-current curve was nonlinear, having a superconducting transition character. On cooling from 295 to 76 K, the contact resistivity decreased several times, in contrast to indium solder contacts where the resistivity increased on cooling. The contacts showed consistently low resistivity and little degradation when exposed to dry air over a four-month period and when repeatedly cycled between room temperature and 76 K. The contacts are formed by sputter depositing a layer of a noble metal-silver and gold were used-on a clean superconductor surface to protect the surface and serve as a contact pad. External connections to the contact pads have been made using both solder and wire-bonding techniques

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

International Nuclear Information System (INIS)

Di Bartolomeo, A; Giubileo, F; Iemmo, L; Romeo, F; Santandrea, S; Gambardella, U

2013-01-01

We produced graphene-based field-effect transistors by contacting mono- and bi-layer graphene by sputtering Ni or Ti as metal electrodes. We performed electrical characterization of the devices by measuring their transfer and output characteristics. We clearly observed the presence of a double-dip feature in the conductance curve for Ni-contacted transistors, and we explain it in terms of charge transfer and graphene doping under the metal contacts. We also studied the contact resistance between the graphene and the metal electrodes with larger values of ∼30 kΩμm 2 recorded for Ti contacts. Importantly, we prove that the contact resistance is modulated by the back-gate voltage. (paper)

Contact resistance of ceramic interfaces between materials used for solid oxide fuel cell applications

Energy Technology Data Exchange (ETDEWEB)

Koch, S.

2002-01-01

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may be smaller or larger than the constriction resistance. The contact resistance between pairs of three different materials were analysed (strontium doped lanthanum manganite, yttria stabilised zirconia and strontium and nickel doped lanthanum cobaltite), and the effects of temperature, atmosphere, polarisation and mechanical load on the contact resistance were investigated. The investigations revealed that the mechanical load of a ceramic contact has a high influence on the contact resistance, and generally power law dependence between the contact resistance and the mechanical load was found. The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constriction at high temperatures. The measured contact resistance was comparable to the resistance calculated on basis of the contact areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential barriers to model the observed behaviour. The current-voltage behaviour of the YSZ contact interfaces was only weakly non-linear, and could be described by 22{+-}1 barriers in series. Contact interfaces with sinterable contact layers were also investigated, and the measured contact resistance for these interfaces were more than 10 times less than for the other interfaces. (au)

Contact Resistance of Ceramic Interfaces Between Materials Used for Solid Oxide Fuel Cell Applications

DEFF Research Database (Denmark)

Koch, Søren

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may....... The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constric-tion at high temperatures. The measured contact resistance was comparable to the resis-tance calculated on basis of the contact...... areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential...

Low resistance and transparent Ag/AZO ohmic contact to p-GaN

International Nuclear Information System (INIS)

Han, T.; Wang, T.; Gan, X. W.; Wu, H.; Shi, Y.; Liu, C.

2014-01-01

Silver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electron beam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out to determine the characteristic of the contacts. The Ag/AZO films annealed at 600 .deg. C were found to present an ohmic contact behavior. The specific contact resistance was calculated to be 9.76 x 10 -4 Ωcm 2 and the transmittance was over 80% for visibly light. The atomic force microscope was used to measure the aggregation of Ag grains which may have been the main factor in the formation of the Ag/AZO ohmic contact to p-GaN.

Instrument for measuring metal-thermoelectric semiconductor contact resistence

International Nuclear Information System (INIS)

Lanxner, M.; Nechmadi, M.; Meiri, B.; Schildkraut, I.

1979-02-01

An instrument for measuring electrical, metal-thermoelectric semiconductor contact resistance is described. The expected errors of measurement are indicated. The operation of the instrument which is based on potential traversing perpendicularly to the contact plane is illustrated for the case of contacts of palladium and bismuth telluride-based thermoelectric material

Testing and Modeling of Contact Problems in Resistance Welding

DEFF Research Database (Denmark)

Song, Quanfeng

together two or three cylindrical parts as well as disc-ring pairs of dissimilar metals. The tests have demonstrated the effectiveness of the model. A theoretical and experimental study is performed on the contact resistance aiming at a more reliable model for numerical simulation of resistance welding......As a part of the efforts towards a professional and reliable numerical tool for resistance welding engineers, this Ph.D. project is dedicated to refining the numerical models related to the interface behavior. An FE algorithm for the contact problems in resistance welding has been developed...... for the formulation, and the interfaces are treated in a symmetric pattern. The frictional sliding contact is also solved employing the constant friction model. The algorithm is incorporated into the finite element code. Verification is carried out in some numerical tests as well as experiments such as upsetting...

Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Boksteen, B.K.; Boksteen, B.K.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2007-01-01

A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and

Low resistivity contacts to YBa2Cu3O(7-x) superconductors

Science.gov (United States)

Hsi, Chi-Shiung; Haertling, Gene H.

1991-01-01

Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

Science.gov (United States)

Fatemi, Navid S.; Weizer, Victor G.

1993-01-01

We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

Bulk and contact resistances of gas diffusion layers in proton exchange membrane fuel cells

Science.gov (United States)

Ye, Donghao; Gauthier, Eric; Benziger, Jay B.; Pan, Mu

2014-06-01

A multi-electrode probe is employed to distinguish the bulk and contact resistances of the catalyst layer (CL) and the gas diffusion layer (GDL) with the bipolar plate (BPP). Resistances are compared for Vulcan carbon catalyst layers (CL), carbon paper and carbon cloth GDL materials, and GDLs with microporous layers (MPL). The Vulcan carbon catalyst layer bulk resistance is 100 times greater than the bulk resistance of carbon paper GDL (Toray TG-H-120). Carbon cloth (CCWP) has bulk and contact resistances twice those of carbon paper. Compression of the GDL decreases the GDL contact resistance, but has little effect on the bulk resistance. Treatment of the GDL with polytetrafluoroethylene (PTFE) increases the contact resistance, but has little effect on the bulk resistance. A microporous layer (MPL) added to the GDL decreases the contact resistance, but has little effect on the bulk resistance. An equivalent circuit model shows that for channels less than 1 mm wide the contact resistance is the major source of electronic resistance and is about 10% of the total ohmic resistance associated with the membrane electrode assembly.

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

International Nuclear Information System (INIS)

He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

2015-01-01

We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

International Nuclear Information System (INIS)

Chiodarelli, Nicolo'; Li, Yunlong; Arstila, Kai; Richard, Olivier; Cott, Daire J; Heyns, Marc; De Gendt, Stefan; Groeseneken, Guido; Vereecken, Philippe M; Masahito, Sugiura; Kashiwagi, Yusaku

2011-01-01

Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

Speci﬿c contact resistance of phase change materials to metal electrode

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha A.A.; Wolters, Robertus A.M.

2010-01-01

For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the speci﬿c contact resistance (Ͽc ) of doped Sb2Te and Ge2Sb2Te5 to TiW

CoSix contact resistance after etching and ashing plasma exposure

International Nuclear Information System (INIS)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya

2009-01-01

The authors investigated the contact resistance fluctuation caused by CoSi x damage in plasma etching and ashing processes. They found that CoSi x layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH 3 F is used instead of CF 4 during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H 2 /N 2 ashing process in which O 2 was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi x . This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor

KAUST Repository

Sun, Jian

2011-08-06

In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5 × 10-6 cm2 of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. © Springer Science+Business Media, LLC 2011.

Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

DEFF Research Database (Denmark)

Clausen, Thomas; Leistiko, Otto

1993-01-01

process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

Effect of surfaces similarity on contact resistance of fractal rough surfaces under cyclic loading

Science.gov (United States)

Gao, Yuanwen; Liu, Limei; Ta, Wurui; Song, Jihua

2018-03-01

Although numerous studies have shown that contact resistance depends significantly on roughness and fractal dimension, it remains elusive how they affect contact resistance between rough surfaces. The interface similarity index is first proposed to describe the similarity of the contact surfaces, which gives a good indication of the actual contact area between surfaces. We reveal that the surfaces' similarity be an origin of contact resistance variation. The cyclic loading can increase the contact stiffness, and the contact stiffness increases with the increase of the interface similarity index. These findings explain the mechanism of surface roughness and fractal dimension on contact resistance, and also provide reference for the reliability design of the electrical connection.

The Effect of Tensile Hysteresis and Contact Resistance on the Performance of Strain-Resistant Elastic-Conductive Webbing

Directory of Open Access Journals (Sweden)

Tien-Wei Shyr

2011-01-01

Full Text Available To use e-textiles as a strain-resistance sensor they need to be both elastic and conductive. Three kinds of elastic-conductive webbings, including flat, tubular, and belt webbings, made of Lycra fiber and carbon coated polyamide fiber, were used in this study. The strain-resistance properties of the webbings were evaluated in stretch-recovery tests and measured within 30% strain. It was found that tensile hysteresis and contact resistance significantly influence the tensile elasticity and the resistance sensitivity of the webbings. The results showed that the webbing structure definitely contributes to the tensile hysteresis and contact resistance. The smaller the friction is among the yarns in the belt webbing, the smaller the tensile hysteresis loss. However the close proximity of the conductive yarns in flat and tubular webbings results in a lower contact resistance.

Study of the Contact Resistance of Interlaced Stainless Steel Yarns Embedded in Hybrid Woven Fabrics

Directory of Open Access Journals (Sweden)

Vasile Simona

2017-06-01

Full Text Available The contact resistance of two interlacing electro-conductive yarns embedded in a hybrid woven fabric will constitute a problem for electro-conductive textiles under certain circumstances. A high contact resistance can induce hotspots, while a variable contact resistance may cause malfunctioning of the components that are interconnected by the electro-conductive yarns. Moreover, the contact robustness should be preserved over time and various treatments such as washing or abrading should not alter the functioning of the electro-conductive textiles. The electrical resistance developed in the contact point of two interlacing electro-conductive yarns is the result of various factors. The influence of diameter of the electro-conductive stainless steel yarns, the weave pattern, the weft density, and the abrasion on the contact resistance was investigated. Hybrid polyester fabrics were produced according to the design of experiments (DoE and statistical models were found that describe the variation of the contact resistance with the selected input parameters. It was concluded that the diameter of the stainless steel warp and weft yarns has a statistically significant influence on the contact resistance regardless of the weave. Weft density had a significant influence on the contact resistance but only in case of the twill fabrics. Abrasion led to an increase in contact resistance regardless of the weave pattern and the type of stainless steel yarn that was used. Finally, a combination of parameters that leads to plain and twill fabrics with low contact resistance and robust contacts is recommended.

Calculation of Equivalent Resistance for Ground Wires Twined with Armor Rods in Contact Terminals

Directory of Open Access Journals (Sweden)

Gang Liu

2018-03-01

Full Text Available Ground wire breakage accidents can destroy the stable operation of overhead lines. The excessive temperature increase arising from the contact resistance between the ground wire and armor rod in the contact terminal is one of the main reasons causing the breakage of ground wires. Therefore, it is necessary to calculate the equivalent resistance for ground wires twined with armor rods in contact terminals. According to the actual distribution characteristics of the contact points in the contact terminal, a three-dimensional electromagnetic field simulation model of the contact terminal was established. Based on the model, the current distribution in the contact terminal was obtained. Subsequently, the equivalent resistance of a ground wire twined with the armor rod in the contact terminal was calculated. The effects of the factors influencing the equivalent resistance were also discussed. The corresponding verification experiments were conducted on a real ground wire on a contact terminal. The measurement results of the equivalent resistance for the armor rod segment showed good agreement with the electromagnetic modeling results.

Rugged Low-Resistance Contacts To High-Tc Superconductors

Science.gov (United States)

Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

1992-01-01

Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

Combined effects of fretting and pollutant particles on the contact resistance of the electrical connectors

Directory of Open Access Journals (Sweden)

Zhigang Kong

2017-06-01

Full Text Available Usually, when electrical connectors operate in vibration environments, fretting will be produced at the contact interfaces. In addition, serious environmental pollution particles will affect contact resistance of the connectors. The fretting will worsen the reliability of connectors with the pollutant particles. The combined effects of fretting and quartz particles on the contact resistance of the gold plating connectors are studied with a fretting test system. The results show that the frequencies have obvious effect on the contact resistance. The higher the frequency, the higher the contact resistance is. The quartz particles cause serious wear of gold plating, which make the nickel and copper layer exposed quickly to increase the contact resistance. Especially in high humidity environments, water supply certain adhesion function and make quartz particles easy to insert or cover the contact surfaces, and even cause opening resistance.

Ti/Al Ohmic Contacts to n-Type GaN Nanowires

Directory of Open Access Journals (Sweden)

Gangfeng Ye

2011-01-01

Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2008-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

Laser cladding of copper with molybdenum for wear resistance enhancement in electrical contacts

International Nuclear Information System (INIS)

Ng, K.W.; Man, H.C.; Cheng, F.T.; Yue, T.M.

2007-01-01

Laser cladding of Mo on Cu has been attempted with the aim of enhancing the wear resistance and hence increasing the service life of electrical contacts made of Cu. In order to overcome the difficulties arising from the large difference in thermal properties and the low mutual solubility between Cu and Mo, Ni was introduced as an intermediate layer between Mo and Cu. The Ni and Mo layers were laser clad one after the other to form a sandwich layer of Mo/Ni/Cu. Excellent bonding between the clad layer and the Cu substrate was ensured by strong metallurgical bonding. The hardness of the surface of the clad layer is seven times higher than that of the Cu substrate. Pin-on-disc wear tests consistently showed that the abrasive wear resistance of the clad layer was also improved by a factor of seven as compared with untreated Cu substrate. The specific electrical contact resistance of the clad surface was about 5.6 x 10 -7 Ω cm 2

Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

Science.gov (United States)

Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

2018-05-01

The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

Increased resistance of contact lens related bacterial biofilms to antimicrobial activity of soft contact lens care solutions

Science.gov (United States)

Szczotka-Flynn, Loretta B.; Imamura, Yoshifumi; Chandra, Jyotsna; Yu, Changping; Mukherjee, Pranab K.; Pearlman, Eric; Ghannoum, Mahmoud A.

2014-01-01

PURPOSE To determine if clinical and reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus form biofilms on silicone hydrogel contact lenses, and ascertain antimicrobial activities of contact lens care solutions. METHODS Clinical and American Type Culture Collection (ATCC) reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus were incubated with lotrafilcon A lenses under conditions that facilitate biofilm formation. Biofilms were quantified by quantitative culturing (colony forming units, CFUs), and gross morphology and architecture were evaluated using scanning electron microscopy (SEM) and confocal microscopy. Susceptibilities of the planktonic and biofilm growth phases of the bacteria to five common multipurpose contact lens care solutions and one hydrogen peroxide care solution were assessed. RESULTS P. aeruginosa, S. marcescens, and S. aureus reference and clinical strains formed biofilms on lotrafilcon A silicone hydrogel contact lenses, as dense networks of cells arranged in multiple layers with visible extracellular matrix. The biofilms were resistant to commonly used biguanide preserved multipurpose care solutions. P. aeruginosa and S. aureus biofilms were susceptible to a hydrogen peroxide and a polyquaternium preserved care solution, whereas S. marcescens biofilm was resistant to a polyquaternium preserved care solution but susceptible to hydrogen peroxide disinfection. In contrast, the planktonic forms were always susceptible. CONCLUSIONS P. aeruginosa, S. marcescens, and S. aureus form biofilms on lotrafilcon A contact lenses, which in contrast to planktonic cells, are resistant to the antimicrobial activity of several soft contact lens care products. PMID:19654521

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.

2013-10-22

In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

Experimental determination of fuel-cladding thermal contact resistance

International Nuclear Information System (INIS)

Maglic, K.; Zivotic, Z.

1968-01-01

Thermal resistance of the UO 2 fuel - Zr-2 cladding was measure by the same experimental apparatus which was used for measuring the thermal conductivity of ceramic fuel. Thermal resistance was measure for a series of heat flux values and the dependence of thermal resistance on the flux is given within in the range from 0.66 W/cm 2 to 13.3 W/cm 2 . The temperature drop on the contact surface was between 39 deg C and 181.7 deg C, proportional to the increase of the heat flux [sr

Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

Science.gov (United States)

Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

2017-08-02

The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

Current voltage characteristics of composite superconductors with high contact resistance

International Nuclear Information System (INIS)

Akhmetov, A.A.; Baev, V.P.

1984-01-01

An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

Determination of the specific resistance of individual freestanding ZnO nanowires with the low energy electron point source microscope

Energy Technology Data Exchange (ETDEWEB)

Weber, Dirk Henning; Beyer, Andre; Voelkel, Berthold; Goelzhaeuser, Armin [Physik Supramolekularer Systeme, Universitaet Bielefeld (Germany); Schlenker, Eva; Bakin, Andrey; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig (Germany)

2008-07-01

A low energy electron point source (LEEPS) microscope is used to determine the electrical conductivity of individual freestanding ZnO nanowires in UHV. The nanowires were contacted with a manipulation tip and I-V curves were taken at different wire lengths. From those, the specific resistance was calculated and separated from the contact resistance. By comparing the specific resistances of ZnO nanowires with diameters between 1100 and 48 nm, a large surface contribution for the thin nanowires was found. A geometric model for separation between surface and bulk contributions is given. The results of electrical transport measurements on vapor phase grown ZnO nanowires are discussed, as well as the size dependence of the wire resistance.

The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

International Nuclear Information System (INIS)

Lee, Sunghwan; Park, Hongsik; Paine, David C.

2012-01-01

The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μ FE ) of 20 ± 1.9 cm 2 /Vs and similar of 18 ± 1.3 cm 2 /Vs when calculated in the saturation regime (μ FE sat ). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρ C > 100 Ωcm 2 ) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μ FE is shown to be 39 ± 2.6 cm 2 /Vs which is consistent with Hall mobility measurements of high carrier density IZO.

Investigation into Contact Resistance And Damage of Metal Contacts Used in RF-MEMS Switches

Science.gov (United States)

2009-09-01

mechanically cycled by a piezo - electric transducer (PZT). The resistance through the simulated switch was measured using a four-wire measurement technique...determined that the microwave performance of a closed relay can be modeled as a simple resistor to a first order equivalent [106,108]. The relay resistance is...Therefore, a piezo device capable of precise higher frequency motion was chosen to provide cyclic contact motion. This device needed to be physically small

CoSi{sub x} contact resistance after etching and ashing plasma exposure

Energy Technology Data Exchange (ETDEWEB)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya [Nagasaki Production Division 1, Sony Semiconductor Kyushu Corporation, 1883-43 Tsukuba-machi, Isahaya-shi, Nagasaki 854-0065 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan); Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan)

2009-07-15

The authors investigated the contact resistance fluctuation caused by CoSi{sub x} damage in plasma etching and ashing processes. They found that CoSi{sub x} layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH{sub 3}F is used instead of CF{sub 4} during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H{sub 2}/N{sub 2} ashing process in which O{sub 2} was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi{sub x}. This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N.; Kim, Moon J.; Gnade, Bruce E.

2016-01-01

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post

Whole-genome comparison of meticillin-resistant Staphylococcus aureus CC22 SCCmecIV from people and their in-contact pets.

Science.gov (United States)

Loeffler, Anette; McCarthy, Alex; Lloyd, David H; Musilová, Eva; Pfeiffer, Dirk U; Lindsay, Jodi A

2013-10-01

Meticillin-resistant Staphylococcus aureus (MRSA) infections remain important medical and veterinary challenges. The MRSA isolated from dogs and cats typically belong to dominant hospital-associated clones, in the UK mostly EMRSA-15 (CC22 SCCmecIV), suggesting original human-to-animal transmission. Nevertheless, little is known about host-specific genetic variation within the same S. aureus lineage. To identify host-specific variation amongst MRSA CC22 SCCmecIV by comparing isolates from pets with those from in-contact humans using whole-genome microarray. Six pairs of MRSA CC22 SCCmecIV from human carriers (owners and veterinary staff) and their respective infected in-contact pets were compared using a 62-strain whole-genome S. aureus microarray (SAM-62). The presence of putative host-specific genes was subsequently determined in a larger number of human (n = 47) and pet isolates (n = 93) by PCR screening. Variation in mobile genetic elements (MGEs) occurred frequently and appeared largely independent of host and in-contact pair. A plasmid (SAP078A) encoding heavy-metal resistance genes (arsR, arsA, cadA, cadC, mco and copB) was found in three of six human and none of six animal isolates. However, only two of four resistance genes were associated with human hosts (P = 0.015 for arsA and cadA). The variation found amongst MGEs highlights that genetic adaptation in MRSA continues. However, host-specific MGEs were not detected, which supports the hypothesis that pets may not be natural hosts of MRSA CC22 and emphasizes that rigorous hygiene measures are critical to prevent contamination and infection of dogs and cats. The host specificity of individual heavy-metal resistance genes warrants further investigation into different selection pressures in humans and animals. © 2013 ESVD and ACVD.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.; Bullock, James; Jeangros, Quentin; Samundsett, Christian; Wan, Yimao; Cui, Jie; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Javey, Ali; Cuevas, Andres

2017-01-01

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.

2017-02-04

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

Contact resistance problems applying ERT on low bulk density forested stony soils. Is there a solution?

Science.gov (United States)

Deraedt, Deborah; Touzé, Camille; Robert, Tanguy; Colinet, Gilles; Degré, Aurore; Garré, Sarah

2015-04-01

contact resistance reduced to 5222 Ω. This improved the contact resistance substantially, but complicates the execution of a pulse tracer experiment. To date we did not find any better solution to this problem and we keep searching a way to improve the contact resistance in stony forested soils with very low bulk density. We would like to exchange on these questions with EGU attendees in order to improve the experimental design or point out a new research path for these specific conditions. This could lead to enhance the use of ERT in soils with low density and high stone content.

Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.k [Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Yi, Min-Su [Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711 (Korea, Republic of); Lee, Sung-Nam [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736 (Korea, Republic of)

2009-05-29

The electrical, structural, and optical characteristics of Ag/ZnO-doped In{sub 2}O{sub 3} (IZO) ohmic contacts to p-type GaN:Mg (2.5 x 10{sup 17} cm{sup -3}) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 {sup o}C annealed samples showed rectifying behavior, the 500 and 600 {sup o}C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 {sup o}C for 3 min in a vacuum ({approx} 10{sup -3} Torr) resulted in the lowest specific contact resistivity of 1.8 x 10{sup -4} {Omega}.cm{sup 2} and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts.

Electrical Resistance Measurements and Microstructural Characterization of the Anode/Interconnect Contact in Simulated Anode-Side SOFC Conditions

DEFF Research Database (Denmark)

Harthøj, Anders; Alimadadi, Hossein; Holt, Tobias

2015-01-01

in phase transformation of the steel and in formation of oxides with a poor electrical conductivity in the anode. In this study, the area specific resistance (ASR) of the steel Crofer 22 APU, in contact with a Ni/YSZ anode with and without a tape casted CeO2 barrier layer was measured in simulated SOFC...... anode conditions at 800◦C. The microstructure in the contact area was characterized using scanning electron microscopy techniques. The ASR was low for the steel in direct contact with the Ni/YSZ anode. Nickel diffusion into the steel resulted in a fine grained zone, which was identified as ferrite...

Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

International Nuclear Information System (INIS)

Yagi, Iwao; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu

2004-01-01

We established a dry-etching patterning process for the channel formation of pentacene thin-film transistor, and fabricated a four-terminal device equipped with a gate electrode. The four-terminal device enabled us to divide two-terminal source-drain resistance into two components of contact resistance and pentacene channel resistance. We obtained direct evidence of a gate-voltagedependent contact resistance change: the gate-induced charge significantly reduced the contact resistance and increased source-drain current. Furthermore, the temperature dependence of the device clearly indicated that the contact resistance was much higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K. An observed activation energy of 80 meV for contact resistance was higher than that of 42 meV for pentacene channel resistance

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly due to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. An experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

Science.gov (United States)

Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

2016-05-01

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

A micro-scale model for predicting contact resistance between bipolar plate and gas diffusion layer in PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.; Lin, G.; Shih, A.J.; Hu, S.J. [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2007-01-01

Contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) in a proton exchange membrane (PEM) fuel cell constitutes a significant portion of the overall fuel cell electrical resistance under the normal operation conditions. Most current methods for contact resistance estimation are experimental and there is a lack of well developed theoretical methods. A micro-scale numerical model is developed to predict the electrical contact resistance between BPP and GDL by simulating the BPP surface topology and GDL structure and numerically determining the status for each contact spot. The total resistance and pressure are obtained by considering all contact spots as resistances in parallel and summing the results together. This model shows good agreements with experimental results. Influences of BPP surface roughness parameters on contact resistance are also studied. This model is beneficial in understanding the contact behavior between BPP and GDL and can be integrated with other fuel cell simulations to predict the overall performance of PEM fuel cells. (author)

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.; Breward, C. J. W.; Howell, P. D.; Young, R. J. S.

2013-01-01

across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

KAUST Repository

Park, Woojin

2018-05-15

We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

Photothermal radiometry applied to characterization and control of thermal contact resistance of crimped metals; Radiometrie photothermique appliquee a la caracterisation et au controle de la resistance thermique de contact de metaux sertis

Energy Technology Data Exchange (ETDEWEB)

Van Schel, Etienne

1989-11-15

Modulated photothermal radiometry is used to study the thermal contact between two metals. At first, two models using a bidimensional axisymmetric geometry are proposed to describe the interface: the first one deals with thermal contact resistance, the second one with an equivalent layer. A thorough calculation of the photothermal signal taking into account the nature of the sample and the detection is here presented. Theoretical simulations show the influence of several parameters (frequency. dimensions of the excitation and the detection) on the sensitivity of the method applied to the detection of the thermal resistance. The comparison, with a three layer-model justifies the use of thermal resistance in periodical regime, for air layers between metals. Then, we present an experimental device that is used to validate the model. The results, obtained on duralumin-copper samples, show the sensitivity of the method and lead us to propose values of thermal contact resistance for different crimpings. At last an industrial testing equipment is described. The results, obtained on laboratory samples, are confirmed. Heat exchanger pipes, including voluntary defects are tested. Thanks to this device, we are able to make an in situ crimping control that can also be applied to other types of contacts. [French] La radiometrie photothermique est utilisee pour etudier le contact thermique entre deux metaux. Tout d'abord, deux modeles utilisant une geometrie bidimensionnelle axisymetrique sont proposes pour decrire l'interface: le premier utilise une resistance thermique de contact, le second un milieu equivalent Un calcul complet du signal photothermique, prenant en compte la nature de l'echantillon et de la detection, est presente. Des simulations theoriques montrent l'influence de quelques parametres (frequence, dimensions de l'excitation et de la detection) sur la sensibilite de la methode a la detection de la resistance thermique. La comparaison, avec un modele a trois

Contact Modelling in Resistance Welding, Part II: Experimental Validation

DEFF Research Database (Denmark)

Song, Quanfeng; Zhang, Wenqi; Bay, Niels

2006-01-01

Contact algorithms in resistance welding presented in the previous paper are experimentally validated in the present paper. In order to verify the mechanical contact algorithm, two types of experiments, i.e. sandwich upsetting of circular, cylindrical specimens and compression tests of discs...... with a solid ring projection towards a flat ring, are carried out at room temperature. The complete algorithm, involving not only the mechanical model but also the thermal and electrical models, is validated by projection welding experiments. The experimental results are in satisfactory agreement...

Thermographic Inspection of Fatigue Crack by Using Contact Thermal Resistance

Energy Technology Data Exchange (ETDEWEB)

Yang, Seung Yong; Kim, No Hyu [Korean University of Technology and Education, Cheonan (Korea, Republic of)

2013-04-15

Fatigue crack was detected from a temperature change around surface crack using the thermographic technique. Thermal gradient across the crack decreased very much due to thermal resistance of contact surface in the crack. Heat diffusion flow passing through the discontinuity was visualized in temperature by infrared camera to find and locate the crack. A fatigue crack specimen(SM-45C), which was prepared according to KS specification and notched in its center to initiate fatigue crack from the notch tip, was heated by halogen lamp at the end of one side to generate a heat diffusion flow in lateral direction. A abrupt jump in temperature across the fatigue crack was observed in thermographic image, by which the crack could be located and sized from temperature distribution.

Thermographic Inspection of Fatigue Crack by Using Contact Thermal Resistance

International Nuclear Information System (INIS)

Yang, Seung Yong; Kim, No Hyu

2013-01-01

Fatigue crack was detected from a temperature change around surface crack using the thermographic technique. Thermal gradient across the crack decreased very much due to thermal resistance of contact surface in the crack. Heat diffusion flow passing through the discontinuity was visualized in temperature by infrared camera to find and locate the crack. A fatigue crack specimen(SM-45C), which was prepared according to KS specification and notched in its center to initiate fatigue crack from the notch tip, was heated by halogen lamp at the end of one side to generate a heat diffusion flow in lateral direction. A abrupt jump in temperature across the fatigue crack was observed in thermographic image, by which the crack could be located and sized from temperature distribution.

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly die to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. In the present paper, an experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

A Feasibility Study on the Worn Area Estimation by Measuring a Contact Resistance (I)

International Nuclear Information System (INIS)

Lee, Young-Ho; Kim, Hyung-Kyu

2007-01-01

In order to improve the fretting wear resistance of the nuclear fuel rod with considering the effect of the contacting spring shape, it is necessary to examine the formation procedure of the worn area during the fretting wear experiments with including its shape, size and the debris removal path. This is because the wear volume and the maximum wear depth are dominantly affected by the worn area and the wear resistance of the nuclear fuel rod was dominantly affected by the spring shape rather than the test environment and the contact mode (i.e. impact, sliding, rubbing, etc.). Unfortunately, it is almost impossible to archive the size and shape of the worn area on real-time basis because the contact surfaces are always hidden. If we could measure the worn area properties during fretting wear tests, it enables us to promptly estimate the wear resistance or behavior with various contacting spring shapes. Generally, fretting wear degradation is generated by the localized plastic deformation, fracture and finally detachment of wear debris. Generally, wear debris easily oxidized by frictional heat, test environment, etc. From the previous studies, most of the wear debris was detached from the worn surface in the distilled water condition while the wear debris in the dry condition remained on or adhered to the worn surface. At this time, it is reasonable that the accumulated wear debris on the worn surface is existed in the form of oxide. If small amount of electric current was applied between the contacting surfaces, wear debris could be an obstacle to flow the electric current. This means that the variation of the contact resistance under constant electric current during the fretting wear tests has much information on the formation of the worn area even though the applying current could accelerate the oxidation of the generated wear debris. So, in this study, fretting wear tests have been performed with applying an electric current in room temperature air in order to

Transmission of methicillin-resistant Staphylococcus aureus to household contacts

NARCIS (Netherlands)

F.P.N. Mollema (Femke); J.H. Richardus (Jan Hendrik); M.D. Behrendt (Myra); N. Vaessen (Norbert); W. Lodder; W. Hendriks; H.A. Verbrugh (Henri); A. Voss (Andreas)

2010-01-01

textabstractThe frequency of and risk factors for methicillin-resistant Staphylococcus aureus (MRSA) transmission from a MRSA index person to household contacts were assessed in this prospective study. Between January 2005 and December 2007, 62 newly diagnosed MRSA index persons (46 patients and 16

Effect of air confinement on thermal contact resistance in nanoscale heat transfer

Science.gov (United States)

Pratap, Dheeraj; Islam, Rakibul; Al-Alam, Patricia; Randrianalisoa, Jaona; Trannoy, Nathalie

2018-03-01

Here, we report a detailed analysis of thermal contact resistance (R c) of nano-size contact formed between a Wollaston wire thermal probe and the used samples (fused silica and titanium) as a function of air pressure (from 1 Pa to 105 Pa). Moreover, we suggest an analytical model using experimental data to extract R c. We found that for both samples, the thermal contact resistance decreases with increasing air pressure. We also showed that R c strongly depends on the thermal conductivity of materials keeping other parameters the same, such as roughness of the probe and samples, as well as the contact force. We provide a physical explanation of the R c trend with pressure and thermal conductivity of the materials: R c is ascribed to the heat transfer through solid-solid (probe-sample) contact and confined air at nanoscale cavities, due to the rough nature of the materials in contact. The contribution of confined air on heat transfer through the probe sample contact is significant at atmospheric pressure but decreases as the pressure decreases. In vacuum, only the solid-solid contact contributes to R c. In addition, theoretical calculations using the well-known acoustic and diffuse mismatch models showed a high thermal conductivity material that exhibits high heat transmission and consequently low R c, supporting our findings.

Evaluation of Blast Resistance of Fiber Reinforced Composite Specimens under Contact Blast Load

Science.gov (United States)

Janota, O.; Foglar, M.

2017-09-01

This paper presents results of experimental programme which took place in 2014, 2015 and 2016. Experiments were focused on the resistance of full scale concrete panels subjected to contact blast loading. Specimens were loaded by contact blast by plastic explosive. All specimens were reinforced concrete slabs made of fiber concrete. Basalt mesh and textile sheets were added to some of the experiments for creating more heterogeneous material to achieve better resistance of the specimens. Evaluation of experiments was mainly focused on the damaged area on the contact side and soffit of the specimens. Dependency of the final damage of concrete panels on the weight of explosive and concrete strength was assessed.

Vertical Soil Profiling Using a Galvanic Contact Resistivity Scanning Approach

Directory of Open Access Journals (Sweden)

Luan Pan

2014-07-01

Full Text Available Proximal sensing of soil electromagnetic properties is widely used to map spatial land heterogeneity. The mapping instruments use galvanic contact, capacitive coupling or electromagnetic induction. Regardless of the type of instrument, the geometrical configuration between signal transmitting and receiving elements typically defines the shape of the depth response function. To assess vertical soil profiles, many modern instruments use multiple transmitter-receiver pairs. Alternatively, vertical electrical sounding can be used to measure changes in apparent soil electrical conductivity with depth at a specific location. This paper examines the possibility for the assessment of soil profiles using a dynamic surface galvanic contact resistivity scanning approach, with transmitting and receiving electrodes configured in an equatorial dipole-dipole array. An automated scanner system was developed and tested in agricultural fields with different soil profiles. While operating in the field, the distance between current injecting and measuring pairs of rolling electrodes was varied continuously from 40 to 190 cm. The preliminary evaluation included a comparison of scan results from 20 locations to shallow (less than 1.2 m deep soil profiles and to a two-layer soil profile model defined using an electromagnetic induction instrument.

A mechanical-electrical finite element method model for predicting contact resistance between bipolar plate and gas diffusion layer in PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Lai, Xinmin; Liu, Dong' an; Peng, Linfa [State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China); Ni, Jun [Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2008-07-15

Contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) plays a significant role on the power loss in a proton exchange membrane (PEM) fuel cell. There are two types of contact behavior at the interface of the BPP and GDL, which are the mechanical one and the electrical one. Furthermore, the electrical contact behavior is dependent on the mechanical one. Thus, prediction of the contact resistance is a coupled mechanical-electrical problem. The current FEM models for contact resistance estimation can only simulate the mechanical contact behavior and moreover they are based on the assumption that the contact surface is equipotential, which is not the case in a real BPP/GDL assembly due to the round corner and margin of the BPP. In this study, a mechanical-electrical FEM model was developed to predict the contact resistance between the BPP and GDL based on the experimental interfacial contact resistivity. At first, the interfacial contact resistivity was obtained by experimentally measuring the contact resistance between the GDL and a flat graphite plate of the same material and processing conditions as the BPP. Then, with the interfacial contact resistivity, the mechanical and electrical contact behaviors were defined and the potential distribution of the BPP/GDL assembly was analyzed using the mechanical-electrical FEM model. At last, the contact resistance was calculated according to the potential drop and the current of the contact surface. The numerical results were validated by comparing with those of the model reported previously. The influence of the round corner of the BPP on the contact resistance was also studied and it is found that there exists an optimal round corner that can minimize the contact resistance. This model is beneficial in understanding the mechanical and electrical contact behaviors between the BPP and GDL, and can be used to predict the contact resistance in a new BPP/GDL assembly. (author)

Resistance of Pseudomonas aeruginosa isolates to hydrogel contact lens disinfection correlates with cytotoxic activity.

Science.gov (United States)

Lakkis, C; Fleiszig, S M

2001-04-01

One of the most common pathogens in infection of hydrogel contact lens wearers is Pseudomonas aeruginosa, which can gain access to the eye via contamination of the lens, lens case, and lens care solutions. Only one strain per species is used in current regulatory testing for the marketing of chemical contact lens disinfectants. The aim of this study was to determine whether P. aeruginosa strains vary in their susceptibility to hydrogel contact lens disinfectants. A method for rapidly screening bacterial susceptibility to contact lens disinfectants was developed, based on measurement of the MIC. The susceptibility of 35 P. aeruginosa isolates to two chemical disinfectants was found to vary among strains. MICs ranged from 6.25 to 100% for both disinfectants at 37 degrees C, and a number of strains were not inhibited by a 100% disinfectant concentration in the lens case environment at room temperature (22 degrees C). Resistance to disinfection appeared to be an inherent rather than acquired trait, since some resistant strains had been isolated prior to the introduction of the disinfectants and some susceptible P. aeruginosa strains could not be made more resistant by repeated disinfectant exposure. A number of P. aeruginosa strains which were comparatively more resistant to short-term disinfectant exposure also demonstrated the ability to grow to levels above the initial inoculum in one chemical disinfectant after long-term (24 to 48 h) disinfectant exposure. Resistance was correlated with acute cytotoxic activity toward corneal epithelial cells and with exsA, which encodes a protein that regulates cytotoxicity via a complex type III secretion system. These results suggest that chemical disinfection solutions may select for contamination with cytotoxic strains. Further investigation of the mechanisms and factors responsible for resistance may also lead to strategies for reducing adverse responses to contact lens wear.

Determination of a Wear Initiation Cycle by using a Contact Resistance Measurement in Nuclear Fuel Fretting

International Nuclear Information System (INIS)

Lee, Young Ho; Kim, Hyung Kyu

2008-01-01

In nuclear fuel fretting, the improving of the contact condition with a modified spring shape is a useful method for increasing the wear resistance of the nuclear fuel rod. This is because the fretting wear resistance between the fuel rod and grid spring is mainly affected by the grid spring shape rather than the environment, the contact modes, etc. In addition, the wear resistance is affected by the wear debris behavior between contact surfaces. So, it is expected that the wear initiation of each spring shape should be determined in order to evaluate a wear resistance. However, it is almost impossible to measure the wear behavior in contact surfaces on a real time basis because the contact surfaces are always hidden. Besides, the results of the worn surface observation after the fretting wear tests are restricted to archive the information on the wear debris behavior and the formation mechanism of the wear scar. In order to evaluate the wear behavior during the fretting wear tests, it is proposed that the contact resistance measurement is a useful method for examining the wear initiation cycle and modes. Generally, fretting wear damages are rapidly progressed by a localized plastic deformation between the contact surfaces, crack initiation and fracture of the deformed surface with a strain hardening difference between a surface and a subsurface and finally a detachment of wear debris. After this, wear debris is easily oxidized by frictional heat, test environment, etc. At this time, a small amount of electric current applied between the contact surfaces will be influenced by the wear debris, which could be an obstacle to an electric current flow. So, it is possible to archive the information on the wear behavior by measuring the contact resistance. In order to determine the wear initiation cycle during the fretting wear tests, in this study, fretting wear tests have been performed by applying a constant electric current in room temperature air

Contact printed masks for 3D microfabrication in negative resists

DEFF Research Database (Denmark)

Häfliger, Daniel; Boisen, Anja

2005-01-01

We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded into the ......We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded...... into the negative resist to protect buried material from UV-exposure. Unlike direct evaporation-deposition of a mask onto the SU-8, printing avoids high stress and radiation, thus preventing resist wrinkling and prepolymerization. We demonstrate effective monolithic fabrication of soft, 4-μm thick and 100-μm long...

Hypersensitivity to contact inhibition provides a clue to cancer resistance of naked mole-rat.

Science.gov (United States)

Seluanov, Andrei; Hine, Christopher; Azpurua, Jorge; Feigenson, Marina; Bozzella, Michael; Mao, Zhiyong; Catania, Kenneth C; Gorbunova, Vera

2009-11-17

The naked mole-rat is the longest living rodent with a maximum lifespan exceeding 28 years. In addition to its longevity, naked mole-rats have an extraordinary resistance to cancer as tumors have never been observed in these rodents. Furthermore, we show that a combination of activated Ras and SV40 LT fails to induce robust anchorage-independent growth in naked mole-rat cells, while it readily transforms mouse fibroblasts. The mechanisms responsible for the cancer resistance of naked mole-rats were unknown. Here we show that naked mole-rat fibroblasts display hypersensitivity to contact inhibition, a phenomenon we termed "early contact inhibition." Contact inhibition is a key anticancer mechanism that arrests cell division when cells reach a high density. In cell culture, naked mole-rat fibroblasts arrest at a much lower density than those from a mouse. We demonstrate that early contact inhibition requires the activity of p53 and pRb tumor suppressor pathways. Inactivation of both p53 and pRb attenuates early contact inhibition. Contact inhibition in human and mouse is triggered by the induction of p27(Kip1). In contrast, early contact inhibition in naked mole-rat is associated with the induction of p16(Ink4a). Furthermore, we show that the roles of p16(Ink4a) and p27(Kip1) in the control of contact inhibition became temporally separated in this species: the early contact inhibition is controlled by p16(Ink4a), and regular contact inhibition is controlled by p27(Kip1). We propose that the additional layer of protection conferred by two-tiered contact inhibition contributes to the remarkable tumor resistance of the naked mole-rat.

Thermal resistance of indium coated sapphire–copper contacts below 0.1K

CERN Document Server

Eisel, T; Koettig, T

2014-01-01

High thermal resistances exist at ultra-low temperatures for solid-solid interfaces. This is especially true for pressed metal-sapphire joints, where the heat is transferred by phonons only. For such pressed joints it is difficult to achieve good physical, i.e. thermal contacts due to surface irregularities in the microscopic or larger scale. Applying ductile indium as an intermediate layer reduces the thermal resistance of such contacts. This could be proven by measurements of several researchers. However, the majority of the measurements were performed at temperatures higher than 1 K. Consequently, it is difficult to predict the thermal resistance of pressed metal-sapphire joints at temperatures below 1 K. In this paper the thermal resistances across four different copper-sapphire-copper sandwiches are presented in a temperature range between 30 mK and 100 mK. The investigated sandwiches feature either rough or polished sapphire discs (empty set 20 mm x 1.5 mm) to investigate the phonon scattering at the bo...

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

Two-point concrete resistivity measurements: interfacial phenomena at the electrode–concrete contact zone

International Nuclear Information System (INIS)

McCarter, W J; Taha, H M; Suryanto, B; Starrs, G

2015-01-01

Ac impedance spectroscopy measurements are used to critically examine the end-to-end (two-point) testing technique employed in evaluating the bulk electrical resistivity of concrete. In particular, this paper focusses on the interfacial contact region between the electrode and specimen and the influence of contacting medium and measurement frequency on the impedance response. Two-point and four-point electrode configurations were compared and modelling of the impedance response was undertaken to identify and quantify the contribution of the electrode–specimen contact region on the measured impedance. Measurements are presented in both Bode and Nyquist formats to aid interpretation. Concretes mixes conforming to BSEN206-1 and BS8500-1 were investigated which included concretes containing the supplementary cementitious materials fly ash and ground granulated blast-furnace slag. A measurement protocol is presented for the end-to-end technique in terms of test frequency and electrode–specimen contacting medium in order to minimize electrode–specimen interfacial effect and ensure correct measurement of bulk resistivity. (paper)

Subject-specific knee joint geometry improves predictions of medial tibiofemoral contact forces

Science.gov (United States)

Gerus, Pauline; Sartori, Massimo; Besier, Thor F.; Fregly, Benjamin J.; Delp, Scott L.; Banks, Scott A.; Pandy, Marcus G.; D’Lima, Darryl D.; Lloyd, David G.

2013-01-01

Estimating tibiofemoral joint contact forces is important for understanding the initiation and progression of knee osteoarthritis. However, tibiofemoral contact force predictions are influenced by many factors including muscle forces and anatomical representations of the knee joint. This study aimed to investigate the influence of subject-specific geometry and knee joint kinematics on the prediction of tibiofemoral contact forces using a calibrated EMG-driven neuromusculoskeletal model of the knee. One participant fitted with an instrumented total knee replacement walked at a self-selected speed while medial and lateral tibiofemoral contact forces, ground reaction forces, whole-body kinematics, and lower-limb muscle activity were simultaneously measured. The combination of generic and subject-specific knee joint geometry and kinematics resulted in four different OpenSim models used to estimate muscle-tendon lengths and moment arms. The subject-specific geometric model was created from CT scans and the subject-specific knee joint kinematics representing the translation of the tibia relative to the femur was obtained from fluoroscopy. The EMG-driven model was calibrated using one walking trial, but with three different cost functions that tracked the knee flexion/extension moments with and without constraint over the estimated joint contact forces. The calibrated models then predicted the medial and lateral tibiofemoral contact forces for five other different walking trials. The use of subject-specific models with minimization of the peak tibiofemoral contact forces improved the accuracy of medial contact forces by 47% and lateral contact forces by 7%, respectively compared with the use of generic musculoskeletal model. PMID:24074941

Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

Science.gov (United States)

Han, Zhiheng; Xu, Guangwei; Wang, Wei; Lu, Congyan; Lu, Nianduan; Ji, Zhuoyu; Li, Ling; Liu, Ming

2016-07-01

Contact resistance plays an important role in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this paper, the surface potential distributions along the channel have been measured by using Kelvin probe force microscopy (KPFM) on operating a-IGZO TFTs, and sharp potential drops at the edges of source and drain were observed. The source and drain contact resistances can be extracted by dividing sharp potential drops with the corresponding drain to source current. It is found that the contact resistances could not be neglected compared with the whole channel resistances in the a-IGZO TFT, and the contact resistances decrease remarkably with increasing gate biased voltage. Our results suggest that the contact resistances can be controlled by tuning the gate biased voltage. Moreover, a transition from gradual channel approximation to space charge region was observed through the surface potential map directly when TFT operating from linear regime to saturation regime.

HAb18G/CD147 cell-cell contacts confer resistance of a HEK293 subpopulation to anoikis in an E-cadherin-dependent manner

Directory of Open Access Journals (Sweden)

Zhu Ping

2010-04-01

Full Text Available Abstract Background Acquisition of resistance to "anoikis" facilitates the survival of cells under independent matrix-deficient conditions, such as cells in tumor progression and the production of suspension culture cells for biomedical engineering. There is evidence suggesting that CD147, an adhesion molecule associated with survival of cells in tumor metastasis and cell-cell contacts, plays an important role in resistance to anoikis. However, information regarding the functions of CD147 in mediating cell-cell contacts and anoikis-resistance remains limited and even self-contradictory. Results An anoikis-resistant clone (HEK293ar, derived from anoikis-sensitive parental Human Embryonic Kidney 293 cells, survived anoikis by the formation of cell-cell contacts. The expression of HAb18G/CD147 (a member of the CD147 family was upregulated and the protein was located at cell-cell junctions. Upregulation of HAb18G/CD147 in suspended HEK293ar cells suppressed anoikis by mediating the formation of cell-cell adhesions. Anoikis resistance in HEK293ar cells also required E-cadherin-mediated cell-cell contacts. Knock-down of HAb18G/CD147 and E-cadherin inhibited cell-cell contacts formation and increased anoikis sensitivity respectively. When HAb18G/CD147 was downregulated, E-cadherin expression in HEK293ar cells was significantly suppressed; however, knockdown of E-cadherin by E-cadherin siRNA or blocking of E-cadherin binding activity with a specific antibody and EDTA had no significant effect on HAb18G/CD147 expression. Finally, pretreatment with LY294002, a phosphoinositide 3-kinase (PI3K/AKT inhibitor, disrupted cell-cell contacts and decreased cell number, but this was not the case in cells treated with the extracellular signal-regulated kinase (ERK inhibitor PD98059. Conclusions Our results provide new evidence that HAb18G/CD147-mediated cell-cell contact confers anoikis resistance in an E-cadherin-dependent manner; and cell-cell contact mediated

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

Science.gov (United States)

Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

1997-11-01

Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

A new method of making ohmic contacts to p-GaN

Energy Technology Data Exchange (ETDEWEB)

Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

2016-12-01

Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

KAUST Repository

Wondmagegn, Wudyalew T.

2010-09-24

The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

KAUST Repository

Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Pieper, Ron J.; Quevedo-Ló pez, Manuel Angel Quevedo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Gnade, Bruce E.

2010-01-01

The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

An analytical model and parametric study of electrical contact resistance in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhiliang; Wang, Shuxin; Zhang, Lianhong [School of Mechanical Engineering, Tianjin University, Tianjin 300072 (China); Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2009-04-15

This paper presents an analytical model of the electrical contact resistance between the carbon paper gas diffusion layers (GDLs) and the graphite bipolar plates (BPPs) in a proton exchange membrane (PEM) fuel cell. The model is developed based on the classical statistical contact theory for a PEM fuel cell, using the same probability distributions of the GDL structure and BPP surface profile as previously described in Wu et al. [Z. Wu, Y. Zhou, G. Lin, S. Wang, S.J. Hu, J. Power Sources 182 (2008) 265-269] and Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Results show that estimates of the contact resistance compare favorably with experimental data by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Factors affecting the contact behavior are systematically studied using the analytical model, including the material properties of the two contact bodies and factors arising from the manufacturing processes. The transverse Young's modulus of chopped carbon fibers in the GDL and the surface profile of the BPP are found to be significant to the contact resistance. The factor study also sheds light on the manufacturing requirements of carbon fiber GDLs for a better contact performance in PEM fuel cells. (author)

Development and applications of the contact electric resistance technique

Energy Technology Data Exchange (ETDEWEB)

Saario, T.

1995-12-31

At the moment both the scientific understanding of corrosion processes and the engineering practices of corrosion control in power plants can benefit considerably from the development of in situ on-line instruments for characterisation of the surface films on construction materials. In this work a new in situ Contact Electric Resistance (CER) technique has been developed for measurement of electric resistance of surface films on metals. The CER technique was applied in this work in several different research areas. These include e.g. localized corrosion of stainless steel in paper mill wet end environment, investigation of the effect of inhibitors in steam generator crevice environments, passivation of GaAs single crystals by sulphate treatment and monitoring of the kinetics of oxide growth on zirconium metals in high temperature water. The CER technique has a measurement capacity ranging from 10-9 {omega} to 105 {omega}. The lowest range of resistance is typical for metallic layers deposited on the surface in electrodeposition processes. The highest range of resistance is found for insulator type of films e.g. on zirconium metals. (author)

Bactericidal Specificity and Resistance Profile of Poly(Quaternary Ammonium) Polymers and Protein-Poly(Quaternary Ammonium) Conjugates.

Science.gov (United States)

Ji, Weihang; Koepsel, Richard R; Murata, Hironobu; Zadan, Sawyer; Campbell, Alan S; Russell, Alan J

2017-08-14

Antibacterial polymers are potentially powerful biocides that can destroy bacteria on contact. Debate in the literature has surrounded the mechanism of action of polymeric biocides and the propensity for bacteria to develop resistance to them. There has been particular interest in whether surfaces with covalently coupled polymeric biocides have the same mechanism of action and resistance profile as similar soluble polymeric biocides. We designed and synthesized a series of poly(quaternary ammonium) polymers, with tailorable molecular structures and architectures, to engineer their antibacterial specificity and their ability to delay the development of bacterial resistance. These linear poly(quaternary ammonium) homopolymers and block copolymers, generated using atom transfer radical polymerization, had structure-dependent antibacterial specificity toward Gram positive and negative bacterial species. When single block copolymers contained two polymer segments of differing antibacterial specificity, the polymer combined the specificities of its two components. Nanoparticulate human serum albumin-poly(quaternary ammonium) conjugates of these same polymers, synthesized via "grafting from" atom transfer radical polymerization, were strongly biocidal and also exhibited a marked decrease in the rate of bacterial resistance development relative to linear polymers. These protein-biocide conjugates mimicked the behavior of surface-presented polycationic biocides rather than their nonproteinaceous counterparts.

An improved model for predicting electrical contact resistance between bipolar plate and gas diffusion layer in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhiliang; Wang, Shuxin [School of Mechanical Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yuanyuan; Lin, Guosong; Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2008-07-15

Electrical contact resistance between bipolar plates (BPPs) and gas diffusion layers (GDLs) in PEM fuel cells has attracted much attention since it is one significant part of the total contact resistance which plays an important role in fuel cell performance. This paper extends a previous model by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783] on the prediction of electrical contact resistance within PEM fuel cells. The original microscale numerical model was based on the Hertz solution for individual elastic contacts, assuming that contact bodies, GDL carbon fibers and BPP asperities are isotropic elastic half-spaces. The new model features a more practical contact by taking into account the bending behavior of carbon fibers as well as their anisotropic properties. The microscale single contact process is solved numerically using the finite element method (FEM). The relationship between the contact pressure and the electrical resistance at the GDL/BPP interface is derived by multiple regression models. Comparisons of the original model by Zhou et al. and the new model with experimental data show that the original model slightly overestimates the electrical contact resistance, whereas a better agreement with experimental data is observed using the new model. (author)

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Directory of Open Access Journals (Sweden)

Patrick H. Carey IV

2017-09-01

Full Text Available AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Science.gov (United States)

Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

2017-09-01

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

Science.gov (United States)

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

Science.gov (United States)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Determining the specific electric resistance of rock

Energy Technology Data Exchange (ETDEWEB)

Persad' ko, V.Ia.

1982-01-01

Data are presented on perfecting the method of laboratory determination of the specific electric resistance of a rock formation. The average error in determining the specific electric resistance of the core at various locations is no more than two percent with low resistance values (2-5 ohms).

Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O2 plasma

Science.gov (United States)

Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

2018-02-01

High contact resistance has been a major bottleneck for MoS2 to achieve high performances among two-dimensional material based optoelectronic and electronic devices. In this study, we investigate the contact resistances of different layered graphene film with MoS2 film with Ti/Au electrodes under different O2 plasma treatment time using the circular transmission line model (CTLM). Annealing process followed O2 plasma process to reduce the oxygen element introduced. Raman and X-ray photoelectric spectroscopy were used to analyze the quality of the materials. Finally, the current and voltage curve indicates good linear characteristics. Under the optimized condition of the O2 plasma treatment, a relatively low contact resistance (∼35.7 Ohm mm) without back gate voltage in single-layer graphene/MoS2 structure at room temperature was achieved compared with the existing reports. This method of introducing graphene as electrodes for MoS2 film demonstrates a remarkable ability to improve the contact resistance, without additional channel doping for two-dimensional materials based devices, which paves the way for MoS2 to be a more promising channel material in optoelectronic and electronic integration.

Relationships among the contact patch length and width, the tire deflection and the rolling resistance of a free-running wheel in a soil bin facility

Energy Technology Data Exchange (ETDEWEB)

Tomaraee, P.; Mardani, A.; Mohebbi, A.; Taghavifar, H.

2015-07-01

Qualitative and quantitative analysis of contact patch length-rolling resistance, contact patch width-rolling resistance and tire deflection-rolling resistance at different wheel load and inflation pressure levels is presented. The experiments were planned in a randomized block design and were conducted in the controlled conditions provided by a soil bin environment utilizing a well-equipped single wheel-tester of Urmia University, Iran. The image processing technique was used for determination of the contact patch length and contact patch width. Analysis of covariance was used to evaluate the correlations. The highest values of contact length and width and tire deflection occurred at the highest wheel load and lowest tire inflation pressure. Contact patch width is a polynomial (order 2) function of wheel load while there is a linear relationship between tire contact length and wheel load as well as between tire deflection and wheel load. Correlations were developed for the evaluation of contact patch length-rolling resistance, contact patch width-rolling resistance and tire deflection-rolling resistance. It is concluded that the variables studied have a significant effect on rolling resistance. (Author)

Improving the contact resistance at low force using gold coated carbon nanotube surfaces

Science.gov (United States)

McBride, J. W.; Yunus, E. M.; Spearing, S. M.

2010-04-01

Investigations to determine the electrical contact performance under repeated cycles at low force conditions for carbon-nanotube (CNT) coated surfaces were performed. The surfaces under investigation consisted of multi-walled CNT synthesized on a silicon substrate and coated with a gold film. These planar surfaces were mounted on the tip of a PZT actuator and contacted with a plated Au hemispherical probe. The dynamic applied force used was 1 mN. The contact resistance (Rc) of these surfaces was investigated with the applied force and with repeated loading cycles performed for stability testing. The surfaces were compared with a reference Au-Au contact under the same experimental conditions. This initial study shows the potential for the application of gold coated CNT surfaces as an interface in low force electrical contact applications.

Determination of work function of graphene under a metal electrode and its role in contact resistance.

Science.gov (United States)

Song, Seung Min; Park, Jong Kyung; Sul, One Jae; Cho, Byung Jin

2012-08-08

Although the work function of graphene under a given metal electrode is critical information for the realization of high-performance graphene-based electronic devices, relatively little relevant research has been carried out to date. In this work, the work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance-voltage (C-V) characteristics of a metal-graphene-oxide-semiconductor (MGOS) capacitor structure. In contrast to the high work function of exposed graphene of 4.89-5.16 eV, the work function of graphene under a metal electrode varies depending on the metal species. With a Cr/Au or Ni contact, the work function of graphene is pinned to that of the contacted metal, whereas with a Pd or Au contact the work function assumes a value of ∼4.62 eV regardless of the work function of the contact metal. A study of the gate voltage dependence on the contact resistance shows that the latter case provides lower contact resistance.

Evaluation of contact resistance between carbon fiber/epoxy composite laminate and printed silver electrode for damage monitoring

International Nuclear Information System (INIS)

Jeon, Eun Beom; Kim, Hak Sung; Takahashi, Kosuke

2014-01-01

An addressable conducting network (ACN) makes it possible to monitor the condition of a structure using the electrical resistance between electrodes on the surface of a carbon fiber reinforced plastics (CFRP) structure. To improve the damage detection reliability of the ACN, the contact resistances between the electrodes and CFRP laminates needs to be minimized. In this study, silver nanoparticle electrodes were fabricated via printed electronics techniques on a CFRP composite. The contact resistance between the silver electrodes and CFRP were measured with respect to various fabrication conditions such as the sintering temperature of the silver nano-ink and the surface roughness of the CFRP laminates. The interfaces between the silver electrode and carbon fibers were observed using a scanning electron microscope (SEM). Based on this study, it was found that the lowest contact resistance of 0.3664Ω could be achieved when the sintering temperature of the silver nano-ink and surface roughness were 120 degree C and 0.230 a, respectively.

Rough surface electrical contact resistance considering scale dependent properties and quantum effects

International Nuclear Information System (INIS)

Jackson, Robert L.; Crandall, Erika R.; Bozack, Michael J.

2015-01-01

The objective of this work is to evaluate the effect of scale dependent mechanical and electrical properties on electrical contact resistance (ECR) between rough surfaces. This work attempts to build on existing ECR models that neglect potentially important quantum- and size-dependent contact and electrical conduction mechanisms present due to the asperity sizes on typical surfaces. The electrical conductance at small scales can quantize or show a stepping trend as the contact area is varied in the range of the free electron Fermi wavelength squared. This work then evaluates if these effects remain important for the interface between rough surfaces, which may include many small scale contacts of varying sizes. The results suggest that these effects may be significant in some cases, while insignificant for others. It depends on the load and the multiscale structure of the surface roughness

Knee medial and lateral contact forces in a musculoskeletal model with subject-specific contact point trajectories.

Science.gov (United States)

Zeighami, A; Aissaoui, R; Dumas, R

2018-03-01

Contact point (CP) trajectory is a crucial parameter in estimating medial/lateral tibio-femoral contact forces from the musculoskeletal (MSK) models. The objective of the present study was to develop a method to incorporate the subject-specific CP trajectories into the MSK model. Ten healthy subjects performed 45 s treadmill gait trials. The subject-specific CP trajectories were constructed on the tibia and femur as a function of extension-flexion using low-dose bi-plane X-ray images during a quasi-static squat. At each extension-flexion position, the tibia and femur CPs were superimposed in the three directions on the medial side, and in the anterior-posterior and proximal-distal directions on the lateral side to form the five kinematic constraints of the knee joint. The Lagrange multipliers associated to these constraints directly yielded the medial/lateral contact forces. The results from the personalized CP trajectory model were compared against the linear CP trajectory and sphere-on-plane CP trajectory models which were adapted from the commonly used MSK models. Changing the CP trajectory had a remarkable impact on the knee kinematics and changed the medial and lateral contact forces by 1.03 BW and 0.65 BW respectively, in certain subjects. The direction and magnitude of the medial/lateral contact force were highly variable among the subjects and the medial-lateral shift of the CPs alone could not determine the increase/decrease pattern of the contact forces. The suggested kinematic constraints are adaptable to the CP trajectories derived from a variety of joint models and those experimentally measured from the 3D imaging techniques. Copyright © 2018 Elsevier Ltd. All rights reserved.

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan

2016-12-29

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a method includes preparing a pretreated target area on a CFRP composite surface using laser pulsed irradiation and bonding an electrode to exposed fibers in the pretreated target area. The surface preparation can allow the electrode to have a low contact resistance with the CFRP composite.

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

Energy Technology Data Exchange (ETDEWEB)

Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

2014-10-28

Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2013-01-01

Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

Methicillin resistance of airborne coagulase-negative staphylococci in homes of persons having contact with a hospital environment.

Science.gov (United States)

Lis, Danuta O; Pacha, Jerzy Z; Idzik, Danuta

2009-04-01

The persons having contact with a hospital environment (hospital personnel workers and discharged patients) are highly exposed to colonization with multidrug-resistant bacteria. The aim of this study was to evaluate the airborne Staphylococcus genus features in homes in which inhabitants have had contact with the hospital environment. Airborne bacteria were collected using a 6-stage Anderson impactor. The Staphylococcus species composition and resistance to methicillin, and other antimicrobial agents among 3 coagulase-negative staphylococci (CNS) species (S cohnii spp cohnii, S epidermidis, S hominis), were determined. Antibiotic resistance of isolates was tested using the agar screen method with methicillin, the polymerase chain reaction technique to detect the mecA gene, and the disk diffusion method. A higher prevalence of methicillin-resistant (MR) strains among the species isolated (40% of S epidermidis, 40% of S hominis, and 60% of S cohnii spp cohnii) was found in homes of persons who had contact with a hospital environment compared with the reference homes (only 12% of S hominis). The mecA gene was revealed in all MR S epidermidis strains and in some MR S hominis (50%) and S cohnii spp cohnii (33%) strains. All isolated MR CNS strains were susceptible to vancomycin, rifampicin, and linezolid. High numbers of airborne multidrug-resistant MR CNS in the homes of persons having contact with a hospital environment indicates that such inhabitants pose a risk of intrafamilial spreading of MR strains via air.

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

International Nuclear Information System (INIS)

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

2010-01-01

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

A new player in race-specific resistance

KAUST Repository

Keller, Beat

2018-04-04

Race-specific resistance genes represent essential genetic sources in crop breeding. Map-based cloning of the wheat Stb6 gene against Zymoseptoria tritici identified a wall-associated receptor kinase-like protein as a novel player in race-specific disease resistance.

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

2015-02-02

Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

3D Modeling and Testing of Contact Problems in Resistance Welding

DEFF Research Database (Denmark)

Nielsen, Chris Valentin

A generic, electro-thermo-mechanically coupled finite element program is developed for three-dimensional simulation of resistance welding. The developed computer program has reached a level of a complete standalone software that can be utilized as a tool in the analysis of resistance welding...... of resistance welding processes, which cover a wide range of spot welding and projection welding applications. Three-dimensional simulation of spot welding enables the analysis of critical effects like electrode misalignment and shunt effects between consecutive spots. A single-sided spot welding case involving...... three-dimensional contact is also presented. This case was suggested by and discussed with a German steel manufacturer. When it comes to projection welding, a natural need for three-dimensional analysis arises in many cases because of the involved geometries. Cross-wire welding and welding of square...

Methods for Specific Electrode Resistance Measurement during Transcranial Direct Current Stimulation

Science.gov (United States)

Khadka, Niranjan; Rahman, Asif; Sarantos, Chris; Truong, Dennis Q.; Bikson, Marom

2014-01-01

Background Transcranial Direct Current Stimulation (tDCS) is investigated to treat a wide range of neuropsychiatric disorders, for rehabilitation, and for enhancing cognitive performance. The monitoring of electrode resistance before and during tDCS is considered important for tolerability and safety, where an unusually high resistance is indicative of undesired electrode or poor skin contact conditions. Conventional resistance measurement methods do not isolate individual electrode resistance but rather measures overall voltage. Moreover, for HD-tDCS devices, cross talk across electrodes makes concurrent resistance monitoring unreliable. Objective We propose a novel method for monitoring of the individual electrode resistance during tDCS, using a super-position of direct current with a test-signal (low-intensity and low-frequency sinusoids with electrode– specific frequencies) and a single sentinel electrode (not used for DC). Methods To validate this methodology, we developed lumped-parameter models of two and multi-electrode tDCS. Approaches with and without a sentinel electrode were solved and underlying assumptions identified. Assumptions were tested and parameterized in healthy participants using forearm stimulation combining tDCS (2 mA) and sinusoidal test-signals (38 μA and 76 μA peak to peak at 1 Hz, 10 Hz, and 100 Hz) and an in vitro test (where varied electrode failure modes were created). DC and AC component voltages across the electrodes were compared and participants were asked to rate subjective pain. Results A sentinel electrode is required to isolate electrode resistance in a two-electrode tDCS system. For multi-electrode resistance tracking, cross talk was aggravated with electrode proximity and current/resistance mismatches, but could be corrected using proposed approaches. Average voltage and average pain scores were not significantly different across test current intensities and frequencies (two-way repeated measures ANOVA) indicating the

Contact metallurgy optimization for ohmic contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

1991-01-01

AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

Thermal contact resistance measurement of conduction cooled binary current lead joint block in cryocooler based self field I-V characterization facility

Energy Technology Data Exchange (ETDEWEB)

Kundu, Ananya, E-mail: ananya@ipr.res.in; Das, Subrat Kumar; Agarwal, Anees Bano Pooja; Pradhan, Subrata [Institute for Plasma Research, Bhat, Gandhinagar, Gujarat 382428 (India)

2016-05-23

In the present study thermal resistance of conduction cooled current lead joint block employing two different interfacial material namely AlN sheet and Kapton Film have been studied in the temperature range 5K-35K. In each case, the performance of different interlayer materials e.g. Indium foil for moderately pressurized contacts (contact pressure <1 MPa), and Apiezon N Grease, GE varnish for low pressurized contact (contact pressure <1 MPa) is studied. The performances of AlN joint with Indium foil and with Apeizon N Grease are studied and it is observed that the contact resistance reduces more with indium foil as compared to greased contact. The contact resistance measurements of Kapton film with Apiezon N grease and with GE varnish were also carried out in the same temperature range. A comparative study of AlN joint with Indium foil and Kapton with GE varnish as filler material is carried out to demonstrate better candidate material among Kapton and AlN for a particular filler material in the same temperature range.

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

2017-01-01

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.

2017-10-31

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

Directory of Open Access Journals (Sweden)

Florent Ravaux

2017-06-01

Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

Energy Technology Data Exchange (ETDEWEB)

Carey, Patrick H. [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Yang, Jiancheng [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Ren, Fan [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Hays, David C. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Kuramata, Akito [Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.; Kravchenko, Ivan I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

2017-10-03

In this work, the use of ITO interlayers between Ga₂O₃ and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga₂O₃ stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10^-5 Ω cm² were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga₂O₃ is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

Series Resistance Analysis of Passivated Emitter Rear Contact Cells Patterned Using Inkjet Printing

Directory of Open Access Journals (Sweden)

Martha A. T. Lenio

2012-01-01

Full Text Available For higher-efficiency solar cell structures, such as the Passivated Emitter Rear Contact (PERC cells, to be fabricated in a manufacturing environment, potentially low-cost techniques such as inkjet printing and metal plating are desirable. A common problem that is experienced when fabricating PERC cells is low fill factors due to high series resistance. This paper identifies and attempts to quantify sources of series resistance in inkjet-patterned PERC cells that employ electroless or light-induced nickel-plating techniques followed by copper light-induced plating. Photoluminescence imaging is used to determine locations of series resistance losses in these inkjet-patterned and plated PERC cells.

A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

International Nuclear Information System (INIS)

Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

2011-01-01

A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, -10 A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10 -6 A at 1.0 V. Average ideality factors have been determined as (1.43 ± 0.01) and (1.66 ± 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 ± 0.002) eV and (0.624 ± 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, V o 2+ .

Application Of Artificial Neural Networks In Modeling Of Manufactured Front Metallization Contact Resistance For Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Musztyfaga-Staszuk M.

2015-09-01

Full Text Available This paper presents the application of artificial neural networks for prediction contact resistance of front metallization for silicon solar cells. The influence of the obtained front electrode features on electrical properties of solar cells was estimated. The front electrode of photovoltaic cells was deposited using screen printing (SP method and next to manufactured by two methods: convectional (1. co-fired in an infrared belt furnace and unconventional (2. Selective Laser Sintering. Resistance of front electrodes solar cells was investigated using Transmission Line Model (TLM. Artificial neural networks were obtained with the use of Statistica Neural Network by Statsoft. Created artificial neural networks makes possible the easy modelling of contact resistance of manufactured front metallization and allows the better selection of production parameters. The following technological recommendations for the screen printing connected with co-firing and selective laser sintering technology such as optimal paste composition, morphology of the silicon substrate, co-firing temperature and the power and scanning speed of the laser beam to manufacture the front electrode of silicon solar cells were experimentally selected in order to obtain uniformly melted structure well adhered to substrate, of a small front electrode substrate joint resistance value. The prediction possibility of contact resistance of manufactured front metallization is valuable for manufacturers and constructors. It allows preserving the customers’ quality requirements and bringing also measurable financial advantages.

Effect of electroless nickel on the series resistance of high-efficiency inkjet printed passivated emitter rear contacted solar cells

Energy Technology Data Exchange (ETDEWEB)

Lenio, Martha A.T. [REC Technology US, Inc., 1159 Triton Dr., Foster City, CA 94301 (United States); Lennon, A.J.; Ho-Baillie, A.; Wenham, S.R. [ARC Photovoltaics Centre of Excellence, University of NSW, Sydney, NSW 2052 (Australia)

2010-12-15

Many existing and emerging solar cell technologies rely on plated metal to form the front surface contacts, and aluminium to form the rear contact. Interactions between the metal plating solutions and the aluminium rear can have a significant impact on cell performance. This paper describes non-uniform nickel deposition on the sintered aluminium rear surface of passivated emitter and rear contacted (PERC) cells patterned using an inkjet printing technique. Rather than being plated homogeneously over the entire rear surface as is observed on an alloyed aluminium rear, the nickel is plated only in the vicinity of the point openings in the rear surface silicon dioxide dielectric layer. Furthermore, this non-uniform nickel deposition was shown to increase the contact resistance of the rear point contacts by an order of magnitude, resulting in higher series resistance values for these fabricated PERC cells. (author)

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Science.gov (United States)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

International Nuclear Information System (INIS)

Shaforost, O.; Wang, K.; Adabi, M.; Guo, Z.; Hanham, S.; Klein, N.; Goniszewski, S.; Gallop, J.; Hao, L.

2015-01-01

A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples

Mechanical Contact Experiments and Simulations

DEFF Research Database (Denmark)

Nielsen, Chris Valentin; Martins, P; Zhang, W.

2011-01-01

Mechanical contact is studied under dynamic development by means of a combined numerical and experimental investigation. The experiments are designed to allow dynamical development of non-planar contact areas with significant expansion in all three directions as the load is increased. Different....... The overall investigation serves for testing and validating the numerical implementation of the mechanical contact, which is one of the main contributions to a system intended for 3D simulation of resistance welding. Correct modelling of contact between parts to be welded, as well as contact with electrodes......, is crucial for satisfactory modelling of the resistance welding process. The resistance heating at the contact interfaces depends on both contact area and pressure, and as the contact areas develop dynamically, the presented tests are relevant for assessing the validity and accuracy of the mechanical contact...

W and WSix Ohmic contacts on p- and n-type GaN

International Nuclear Information System (INIS)

Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

1999-01-01

W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

Energy Technology Data Exchange (ETDEWEB)

Vecchiola, Aymeric [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Concept Scientific Instruments, ZA de Courtaboeuf, 2 rue de la Terre de Feu, 91940 Les Ulis (France); Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Chrétien, Pascal; Schneegans, Olivier; Mencaraglia, Denis; Houzé, Frédéric, E-mail: frederic.houze@geeps.centralesupelec.fr [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Delprat, Sophie [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); UPMC, Université Paris 06, 4 place Jussieu, 75005 Paris (France); Bouzehouane, Karim; Seneor, Pierre; Mattana, Richard [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Tatay, Sergio [Molecular Science Institute, University of Valencia, 46980 Paterna (Spain); Geffroy, Bernard [Lab. Physique des Interfaces et Couches minces (PICM), UMR 7647 CNRS-École polytechnique, 91128 Palaiseau (France); Lab. d' Innovation en Chimie des Surfaces et Nanosciences (LICSEN), NIMBE UMR 3685 CNRS-CEA Saclay, 91191 Gif-sur-Yvette (France); and others

2016-06-13

An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider range of resistance measurement (over 10 decades) without any manual switching, which is a major advantage for the characterization of materials with large on-sample resistance variations. After describing the basics of the set-up, we report on preliminary investigations focused on academic samples of self-assembled monolayers with various thicknesses as a demonstrator of the imaging capabilities of our instrument, from qualitative and semi-quantitative viewpoints. Then two application examples are presented, regarding an organic photovoltaic thin film and an array of individual vertical carbon nanotubes. Both attest the relevance of the technique for the control and optimization of technological processes.

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

KAUST Repository

Park, Woojin; Shaikh, Sohail F.; Min, Jungwook; Lee, Sang Kyung; Lee, Byoung Hun; Hussain, Muhammad Mustafa

2018-01-01

an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width

Risk Factors for Carbapenemase-Producing Carbapenem-Resistant Enterobacteriaceae (CP-CRE) Acquisition Among Contacts of Newly Diagnosed CP-CRE Patients.

Science.gov (United States)

Schwartz-Neiderman, Anat; Braun, Tali; Fallach, Noga; Schwartz, David; Carmeli, Yehuda; Schechner, Vered

2016-10-01

OBJECTIVE Carbapenemase-producing carbapenem-resistant Enterobacteriaceae (CP-CRE) are extremely drug-resistant pathogens. Screening of contacts of newly identified CP-CRE patients is an important step to limit further transmission. We aimed to determine the risk factors for CP-CRE acquisition among patients exposed to a CP-CRE index patient. METHODS A matched case-control study was performed in a tertiary care hospital in Israel. The study population was comprised of patients who underwent rectal screening for CP-CRE following close contact with a newly identified CP-CRE index patient. Cases were defined as positive tests for CP-CRE. For each case patient, 2 matched controls were randomly selected from the pool of contacts who tested negative for CP-CRE following exposure to the same index case. Bivariate and multivariate analyses were conducted using conditional logistic regression. RESULTS In total, 53 positive contacts were identified in 40 unique investigations (896 tests performed on 735 contacts) between October 6, 2008, and June 7, 2012. bla KPC was the only carbapenemase identified. In multivariate analysis, risk factors for CP-CRE acquisition among contacts were (1) contact with an index patient for ≥3 days (odds ratio [OR], 9.8; 95% confidence interval [CI], 2.0-48.9), (2) mechanical ventilation (OR, 4.1; 95% CI, 1.4-11.9), and (3) carriage or infection with another multidrug-resistant organism (MDRO; OR, 2.6; 95% CI, 1.0-7.1). Among patients who received antibiotics, cephalosporins were associated with a lower risk of acquisition. CONCLUSIONS Patient characteristics (ventilation and carriage of another MDRO) as well as duration of contact are risk factors for CP-CRE acquisition among contacts. The role of cephalosporins requires further study. Infect Control Hosp Epidemiol 2016;1-7.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

2015-01-14

Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

Electroplated contacts and porous silicon for silicon based solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

2015-04-15

Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

Dual ohmic contact to N- and P-type silicon carbide

Science.gov (United States)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Coordinate transformation in the model of long Josephson contacts: geometrically equivalent contacts

International Nuclear Information System (INIS)

Semerdzhieva, E.G.; Boyadzhiev, T.L.; ); Shukrinov, Yu.M.; Physical Technical Institute Dushanbe, 734063

2005-01-01

The transition from model of long Josephson variable-width contact to the contact model with coordinate-dependent Josephson current amplitude is realized by transforming the coordinates. This sets up a correspondence between Josephson contacts of variable width and quasi-one-dimensional contacts of variable thickness barrier layer. It is shown, that for contacts of exponentially varying width the barrier layer of the corresponding quasi-one-dimensional contact contains the distributed resistive inhomogeneity which is an attractor to magnetic flux vortices. With numerical experiments, a 'critical current-magnetic field' dependence for a resistive microinhomogeneity Josephson contact was plotted, and its comparison with the critical curve for a contact of exponentially varying width was made. Thus, this demonstrates that the distributed inhomogeneity may be replaced by a local one at the JC end what technologically, may offer definite advantages

Serum vitamin d level and susceptibility to multidrug-resistant tuberculosis among household contacts

Science.gov (United States)

Herlina, N.; Sinaga, B. Y. M.; Siagian, P.; Mutiara, E.

2018-03-01

Low levels of vitamin D is a predisposing factor for Multidrug-resistant tuberculosis. Family members in contact with the patient are also at risk of infection. Currently, there is no study that compares vitamin D levels between MDR-TB patients and household contact. This study aims to identify the association between level vitamin D within MDR-TB occurrence. This was a case-control study, with the number of samples in each group (MDR-TB) patients and household contactswere40 people. Each member of each group was checked for vitamin D levels using enzyme-linked immunosorbent assay (ELISA) technique. Statistical analysis was by using Chi-Square analysis using SPSS. Mean levels of vitamin D in MDR-TB patients were 32.21, household contact 31.7. There was anosignificant association between vitamin D levels and MDR-TB occurrence (p=1.0).No significant associationbetween vitamin D level with theMDR-TB occurrence.

Regulatory function of a novel population of mouse autoantigen-specific Foxp3 regulatory T cells depends on IFN-gamma, NO, and contact with target cells.

Directory of Open Access Journals (Sweden)

Cyndi Chen

Full Text Available BACKGROUND: Both naturally arising Foxp3(+ and antigen-induced Foxp3(- regulatory T cells (Treg play a critical role in regulating immune responses, as well as in preventing autoimmune diseases and graft rejection. It is known that antigen-specific Treg are more potent than polyclonal Treg in suppressing pathogenic immune responses that cause autoimmunity and inflammation. However, difficulty in identifying and isolating a sufficient number of antigen-specific Treg has limited their use in research to elucidate the mechanisms underlying their regulatory function and their potential role in therapy. METHODOLOGY/PRINCIPAL FINDINGS: Using a novel class II MHC tetramer, we have isolated a population of CD4(+ Foxp3(- T cells specific for the autoantigen glutamic acid decarboxylase p286-300 peptide (NR286 T cells from diabetes-resistant non-obese resistant (NOR mice. These Foxp3(- NR286 T cells functioned as Treg that were able to suppress target T cell proliferation in vitro and inhibit type 1 diabetes in animals. Unexpected results from mechanistic studies in vitro showed that their regulatory function was dependent on not only IFN-gamma and nitric oxide, but also on cell contact with target cells. In addition, separating NR286 Treg from target T cells in transwell assays abolished both production of NO and suppression of target T cells, regardless of whether IFN-gamma was produced in cell cultures. Therefore, production of NO, not IFN-gamma, was cell contact dependent, suggesting that NO may function downstream of IFN-gamma in mediating regulatory function of NR286 Treg. CONCLUSIONS/SIGNIFICANCE: These studies identified a unique population of autoantigen-specific Foxp3(- Treg that can exert their regulatory function dependent on not only IFN-gamma and NO but also cell contact with target cells.

Reduction of Ag–Si electrical contact resistance by selective RF heating

International Nuclear Information System (INIS)

De Wijs, W-J A; Ljevar, S; Van de Sande, M J; De With, G

2016-01-01

Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s −1 . Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates. (paper)

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES

International Nuclear Information System (INIS)

Kawagoe, A.; Kawabata, Y.; Sumiyoshi, F.; Nagaya, S.; Hirano, N.

2006-01-01

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES coils were evaluated from a comparison between measured data and 2D-FEM analyses on interstrand coupling losses in these cables. The cables were composed of 30 non-twisted Bi-2212 strands with a diameter of 0.81 mm and a cable twist pitch of 90 mm. Three samples were measured; one of them had NiCr cores and the others had no cores. One of the latter two samples repeatedly experienced bending. The interstrand coupling losses were measured in liquid helium for the straight samples under transverse ac ripple magnetic fields superposed on dc bias magnetic fields. The transverse magnetic field was applied to the samples in directions both perpendicular and parallel to the flat face of the cable. The effect of the bending on the interstrand coupling losses could be neglected for the non-cored samples. The interstrand coupling losses of NiCr cored sample decreased by about 30% compared with the non-cored samples, in case the direction of the transverse magnetic fields applied to the cable is perpendicular to the flat face of the cable. Using these results and 2D-FEM analyses, taking into account that interstrand contact conditions vary from the center to the edge in the cross-section of cables, gave us the conclusion that the between side-by-side strands contact with metallurgical bond only in both edges of the cables

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES

Science.gov (United States)

Kawagoe, A.; Kawabata, Y.; Sumiyoshi, F.; Nagaya, S.; Hirano, N.

2006-10-01

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES coils were evaluated from a comparison between measured data and 2D-FEM analyses on interstrand coupling losses in these cables. The cables were composed of 30 non-twisted Bi-2212 strands with a diameter of 0.81 mm and a cable twist pitch of 90 mm. Three samples were measured; one of them had NiCr cores and the others had no cores. One of the latter two samples repeatedly experienced bending. The interstrand coupling losses were measured in liquid helium for the straight samples under transverse ac ripple magnetic fields superposed on dc bias magnetic fields. The transverse magnetic field was applied to the samples in directions both perpendicular and parallel to the flat face of the cable. The effect of the bending on the interstrand coupling losses could be neglected for the non-cored samples. The interstrand coupling losses of NiCr cored sample decreased by about 30% compared with the non-cored samples, in case the direction of the transverse magnetic fields applied to the cable is perpendicular to the flat face of the cable. Using these results and 2D-FEM analyses, taking into account that interstrand contact conditions vary from the center to the edge in the cross-section of cables, gave us the conclusion that the between side-by-side strands contact with metallurgical bond only in both edges of the cables.

Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

Science.gov (United States)

Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

2017-12-01

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan; Lubineau, Gilles; Alfano, Marco Francesco; Buttner, Ulrich

2016-01-01

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a

Lack of the purinergic receptor P2X7 results in resistance to contact hypersensitivity

Science.gov (United States)

Weber, Felix C.; Esser, Philipp R.; Müller, Tobias; Ganesan, Jayanthi; Pellegatti, Patrizia; Simon, Markus M.; Zeiser, Robert; Idzko, Marco; Jakob, Thilo

2010-01-01

Sensitization to contact allergens requires activation of the innate immune system by endogenous danger signals. However, the mechanisms through which contact allergens activate innate signaling pathways are incompletely understood. In this study, we demonstrate that mice lacking the adenosine triphosphate (ATP) receptor P2X7 are resistant to contact hypersensitivity (CHS). P2X7-deficient dendritic cells fail to induce sensitization to contact allergens and do not release IL-1β in response to lipopolysaccharide (LPS) and ATP. These defects are restored by pretreatment with LPS and alum in an NLRP3- and ASC-dependent manner. Whereas pretreatment of wild-type mice with P2X7 antagonists, the ATP-degrading enzyme apyrase or IL-1 receptor antagonist, prevents CHS, IL-1β injection restores CHS in P2X7-deficient mice. Thus, P2X7 is a crucial receptor for extracellular ATP released in skin in response to contact allergens. The lack of P2X7 triggering prevents IL-1β release, which is an essential step in the sensitization process. Interference with P2X7 signaling may be a promising strategy for the prevention of allergic contact dermatitis. PMID:21059855

The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

Science.gov (United States)

Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

2008-07-01

It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

SPECIFIC RESISTANCE AND SPECIFIC INTENSITY OF BELT SANDING OF WOOD

Directory of Open Access Journals (Sweden)

Boleslaw Porankiewicz

2010-06-01

Full Text Available This paper examines and discusses the specific belt sanding resistance K (N·cm-2 and specific belt sanding intensity SI (g·cm-2·min-1, for wood of Pinus sylvestris L., Picea abies L., Quercus robra L., Acer pseudoplatanus L., Alnus glutinosa Gaertn., and Populus Nigra L., by different sanding pressure pS, different sanding grit NG number, and different wood grain angles Phi(v.

Systematic drug screening reveals specific vulnerabilities and co-resistance patterns in endocrine-resistant breast cancer.

Science.gov (United States)

Kangaspeska, Sara; Hultsch, Susanne; Jaiswal, Alok; Edgren, Henrik; Mpindi, John-Patrick; Eldfors, Samuli; Brück, Oscar; Aittokallio, Tero; Kallioniemi, Olli

2016-07-04

The estrogen receptor (ER) inhibitor tamoxifen reduces breast cancer mortality by 31 % and has served as the standard treatment for ER-positive breast cancers for decades. However, 50 % of advanced ER-positive cancers display de novo resistance to tamoxifen, and acquired resistance evolves in 40 % of patients who initially respond. Mechanisms underlying resistance development remain poorly understood and new therapeutic opportunities are urgently needed. Here, we report the generation and characterization of seven tamoxifen-resistant breast cancer cell lines from four parental strains. Using high throughput drug sensitivity and resistance testing (DSRT) with 279 approved and investigational oncology drugs, exome-sequencing and network analysis, we for the first time, systematically determine the drug response profiles specific to tamoxifen resistance. We discovered emerging vulnerabilities towards specific drugs, such as ERK1/2-, proteasome- and BCL-family inhibitors as the cells became tamoxifen-resistant. Co-resistance to other drugs such as the survivin inhibitor YM155 and the chemotherapeutic agent paclitaxel also occurred. This study indicates that multiple molecular mechanisms dictate endocrine resistance, resulting in unexpected vulnerabilities to initially ineffective drugs, as well as in emerging co-resistances. Thus, combatting drug-resistant tumors will require patient-tailored strategies in order to identify new drug vulnerabilities, and to understand the associated co-resistance patterns.

Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.

Science.gov (United States)

Chambers, Scott A; Gu, Meng; Sushko, Peter V; Yang, Hao; Wang, Chongmin; Browning, Nigel D

2013-08-07

Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Determination and Application of Comprehensive Specific Frictional Resistance in Heating Engineering

Directory of Open Access Journals (Sweden)

Yanan Tian

2018-01-01

Full Text Available In this study, we analyze the deficiencies of specific frictional resistance in heating engineering. Based on economic specific frictional resistance, we put forward the concept of comprehensive specific frictional resistance, which considers the multiple factors of technology, economy, regulation modes, pipe segment differences, and medium pressure. Then, we establish a mathematical model of a heating network across its lifespan in order to develop a method for determining the comprehensive specific frictional resistance. Relevant conclusions can be drawn from the results. As an application, we have planned the heating engineering for Yangyuan County in China, which demonstrates the feasibility and superiority of the method.

Estimating the Contact Endurance of the AISI 321 Stainless Steel Under Contact Gigacycle Fatigue Tests

Science.gov (United States)

Savrai, R. A.; Makarov, A. V.; Osintseva, A. L.; Malygina, I. Yu.

2018-02-01

Mechanical testing of the AISI 321 corrosion resistant austenitic steel for contact gigacycle fatigue has been conducted with the application of a new method of contact fatigue testing with ultrasonic frequency of loading according to a pulsing impact "plane-to-plane" contact scheme. It has been found that the contact endurance (the ability to resist the fatigue spalling) of the AISI 321 steel under contact gigacycle fatigue loading is determined by its plasticity margin and the possibility of additional hardening under contact loading. It is demonstrated that the appearance of localized deep and long areas of spalling on a material surface can serve as a qualitative characteristic for the loss of the fatigue strength of the AISI 321 steel under impact contact fatigue loading. The value of surface microhardness measured within contact spots and the maximum depth of contact damages in the peripheral zone of contact spots can serve as quantitative criteria for that purpose.

Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Cudzinovic, M.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

International Nuclear Information System (INIS)

Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

2009-01-01

In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

Evaluation of pet contact as a risk factor for carriage of multidrug-resistant staphylococci in nursing home residents.

Science.gov (United States)

Gandolfi-Decristophoris, Paola; De Benedetti, Anna; Petignat, Christiane; Attinger, Monica; Guillaume, Jan; Fiebig, Lena; Hattendorf, Jan; Cernela, Nicole; Regula, Gertraud; Petrini, Orlando; Zinsstag, Jakob; Schelling, Esther

2012-03-01

Pets, often used as companionship and for psychological support in the therapy of nursing home residents, have been implicated as reservoirs for antibiotic-resistant bacteria. We investigated the importance of pets as reservoirs of multidrug-resistant (MDR) staphylococci in nursing homes. We assessed the carriage of MDR staphylococci in pets and in 2 groups of residents, those living in nursing homes with pets and those living without pet contacts. We collected demographic, health status, and human-pet contact data by means of questionnaires. We assessed potential bacteria transmission pathways by investigating physical resident-to-pet contact. The observed prevalence of MDR staphylococci carriage was 84/229 (37%) in residents living with pets and 99/216 (46%) in those not living with pets (adjusted odds ratio [aOR], 0.6; 95% confidence interval [CI], 0.4-0.9). Active pet contact was associated with lower carriage of MDR staphylococci (aOR, 0.5; 95% CI, 0.4-0.8). Antibiotic treatment during the previous 3 months was associated with significantly increased risk for MDR carriage in residents (aOR, 3.1; 95% CI, 1.8-5.7). We found no evidence that the previously reported benefits of pet contact are compromised by the increased risk of carriage of MDR staphylococci in residents associated with interaction with these animals in nursing homes. Thus, contact with pets, always under good hygiene standards, should be encouraged in these settings. Copyright © 2012 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Mosby, Inc. All rights reserved.

Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

International Nuclear Information System (INIS)

Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

2004-01-01

Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

Evaluation of contact precautions for methicillin-resistant Staphylococcus aureus and vancomycin-resistant Enterococcus.

Science.gov (United States)

Bardossy, Ana Cecilia; Alsafadi, Muhammad Yasser; Starr, Patricia; Chami, Eman; Pietsch, Jennifer; Moreno, Daniela; Johnson, Laura; Alangaden, George; Zervos, Marcus; Reyes, Katherine

2017-12-01

There are limited controlled data demonstrating contact precautions (CPs) prevent methicillin-resistant Staphylococcus aureus (MRSA) and vancomycin-resistant Enterococcus (VRE) infections in endemic settings. We evaluated changes in hospital-acquired MRSA and VRE infections after discontinuing CPs for these organisms. This is a retrospective study done at an 800-bed teaching hospital in urban Detroit. CPs for MRSA and VRE were discontinued hospital-wide in 2013. Data on MRSA and VRE catheter-associated urinary tract infections (CAUTIs), ventilator-associated pneumonia (VAP), central line-associated bloodstream infections (CLABSIs), surgical site infections (SSIs), and hospital-acquired MRSA bacteremia (HA-MRSAB) rates were compared before and after CPs discontinuation. There were 36,907 and 40,439 patients hospitalized during the two 12-month periods: CPs and no CPs. Infection rates in the CPs and no-CPs periods were as follows: (1) MRSA infections: VAP, 0.13 versus 0.11 (P = .84); CLABSI, 0.11 versus 0.19 (P = .45); SSI, 0 versus 0.14 (P = .50); and CAUTI, 0.025 versus 0.033 (P = .84); (2) VRE infections: CAUTI, 0.27 versus 0.13 (P = .19) and CLABSI, 0.29 versus 0.3 (P = .94); and (3) HA-MRSAB rates: 0.14 versus 0.11 (P = .55), respectively. Discontinuation of CPs did not adversely impact endemic MRSA and VRE infection rates. Copyright © 2017 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

Reconsidering contact precautions for endemic methicillin-resistant Staphylococcus aureus and vancomycin-resistant Enterococcus.

Science.gov (United States)

Morgan, Daniel J; Murthy, Rekha; Munoz-Price, L Silvia; Barnden, Marsha; Camins, Bernard C; Johnston, B Lynn; Rubin, Zachary; Sullivan, Kaede V; Shane, Andi L; Dellinger, E Patchen; Rupp, Mark E; Bearman, Gonzalo

2015-10-01

Whether contact precautions (CP) are required to control the endemic transmission of methicillin-resistant Staphylococcus aureus (MRSA) or vancomycin-resistant Enterococcus (VRE) in acute care hospitals is controversial in light of improvements in hand hygiene, MRSA decolonization, environmental cleaning and disinfection, fomite elimination, and chlorhexidine bathing. To provide a framework for decision making around use of CP for endemic MRSA and VRE based on a summary of evidence related to use of CP, including impact on patients and patient care processes, and current practices in use of CP for MRSA and VRE in US hospitals. A literature review, a survey of Society for Healthcare Epidemiology of America Research Network members on use of CP, and a detailed examination of the experience of a convenience sample of hospitals not using CP for MRSA or VRE. Hospital epidemiologists and infection prevention experts. No high quality data support or reject use of CP for endemic MRSA or VRE. Our survey found more than 90% of responding hospitals currently use CP for MRSA and VRE, but approximately 60% are interested in using CP in a different manner. More than 30 US hospitals do not use CP for control of endemic MRSA or VRE. Higher quality research on the benefits and harms of CP in the control of endemic MRSA and VRE is needed. Until more definitive data are available, the use of CP for endemic MRSA or VRE in acute care hospitals should be guided by local needs and resources.

Reliability growth of thin film resistors contact

Directory of Open Access Journals (Sweden)

Lugin A. N.

2010-10-01

Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

Is Chemoprophylaxis for Child Contacts of Drug-Resistant TB Patients Beneficial? A Systematic Review

Directory of Open Access Journals (Sweden)

C. Padmapriyadarsini

2018-01-01

Full Text Available Background. Preventive therapy for child contacts of multidrug-resistant tuberculosis (MDR-TB patients is poorly studied, and no consensus about the role and the rationale of chemoprophylaxis has been reached. Objective. To conduct systematic review with an aim to determine the effectiveness of TB preventive therapy in reducing the incidence of TB disease in pediatric contacts of MDR-TB patients. Methods. We conducted a literature search for randomized control trials, cohort studies, and case reports of chemoprophylaxis for pediatric contacts of MDR-TB patients in PubMed, EMBASE, Cochrane Databases of Systematic Reviews, metaRegister of Controlled Trials, and other clinical registries through March 2017, using appropriate search strategy. In addition we searched abstracts from international conferences and references of published articles and reviews. Results. Of the 153 references assessed from various databases, seven studies were identified as relevant after adaption of eligibility criteria and assessed for systematic review. Of these, only two studies contributed data for the pooled meta-analysis. Conclusions. Though the available evidences suggest that the chemoprophylaxis for child contacts of MDR-TB patients is beneficial, data to support or reject preventive therapy is very limited. Further clinical research, in Tb endemic settings like India, needs to be performed to prove the beneficial effect of chemoprophylaxis for pediatric contacts of MDR-TB.

Ohmic contacts to semiconducting diamond

Science.gov (United States)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2015-01-01

Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

Fabrication of robot head module using contact resistance force sensor for human robot interaction and its evaluation

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong Ki; Kim, Jong Ho [Korea Reserch Institute of Standards and Science, Daejeon (Korea, Republic of); Kwon, Hyun Joon [Univ. of Maryland, Maryland (United States); Kwon, Young Ha [Kyung Hee Univ., Gyunggi Do (Korea, Republic of)

2012-10-15

This paper presents a design of a robot head module with touch sensing algorithms that can simultaneously detect contact force and location. The module is constructed with a hemisphere and three sensor units that are fabricated using contact resistance force sensors. The surface part is designed with the hemisphere that measures 300 mm in diameter and 150 mm in height. Placed at the bottom of the robot head module are three sensor units fabricated using a simple screen printing technique. The contact force and the location of the model are evaluated through the calibration setup. The experiment showed that the calculated contact positions almost coincided with the applied load points as the contact location changed with a location error of about {+-}8.67 mm. The force responses of the module were evaluated at two points under loading and unloading conditions from 0 N to 5 N. The robot head module showed almost the same force responses at the two points.

Contact Resistance of Tantalum Coatings in Fuel Cells and Electrolyzers using Acidic Electrolytes at Elevated Temperatures

DEFF Research Database (Denmark)

Jensen, Annemette Hindhede; Christensen, Erik; Barner, Jens H. Von

2014-01-01

stainless steel were found to be far below the US Department of Energy target value of 10mcm2. The good contact resistance of tantalum was demonstrated by simulating high temperature polymer electrolyte membrane electrolysis conditions by anodization performed in 85% phosphoric acid at 130◦C, followed...

Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

Science.gov (United States)

Roldán, J. B.; Miranda, E.; González-Cordero, G.; García-Fernández, P.; Romero-Zaliz, R.; González-Rodelas, P.; Aguilera, A. M.; González, M. B.; Jiménez-Molinos, F.

2018-01-01

A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.

Systematic drug screening reveals specific vulnerabilities and co-resistance patterns in endocrine-resistant breast cancer

International Nuclear Information System (INIS)

Kangaspeska, Sara; Hultsch, Susanne; Jaiswal, Alok; Edgren, Henrik; Mpindi, John-Patrick; Eldfors, Samuli; Brück, Oscar; Aittokallio, Tero; Kallioniemi, Olli

2016-01-01

The estrogen receptor (ER) inhibitor tamoxifen reduces breast cancer mortality by 31 % and has served as the standard treatment for ER-positive breast cancers for decades. However, 50 % of advanced ER-positive cancers display de novo resistance to tamoxifen, and acquired resistance evolves in 40 % of patients who initially respond. Mechanisms underlying resistance development remain poorly understood and new therapeutic opportunities are urgently needed. Here, we report the generation and characterization of seven tamoxifen-resistant breast cancer cell lines from four parental strains. Using high throughput drug sensitivity and resistance testing (DSRT) with 279 approved and investigational oncology drugs, exome-sequencing and network analysis, we for the first time, systematically determine the drug response profiles specific to tamoxifen resistance. We discovered emerging vulnerabilities towards specific drugs, such as ERK1/2-, proteasome- and BCL-family inhibitors as the cells became tamoxifen-resistant. Co-resistance to other drugs such as the survivin inhibitor YM155 and the chemotherapeutic agent paclitaxel also occurred. This study indicates that multiple molecular mechanisms dictate endocrine resistance, resulting in unexpected vulnerabilities to initially ineffective drugs, as well as in emerging co-resistances. Thus, combatting drug-resistant tumors will require patient-tailored strategies in order to identify new drug vulnerabilities, and to understand the associated co-resistance patterns. The online version of this article (doi:10.1186/s12885-016-2452-5) contains supplementary material, which is available to authorized users

Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method

Science.gov (United States)

Lee, Byeong Hyeon; Han, Sangmin; Lee, Sang Yeol

2018-01-01

Amorphous silicon-zinc-tin-oxide (a-SZTO) thin film transistors (TFTs) have been fabricated depending on the silicon ratio in channel layers. The a-SZTO TFT exhibited high electrical properties, such as high mobility of 23 cm2 V-1 s-1, subthreshold swing of 0.74 V/decade and ION/OFF of 2.8 × 108, despite of the addition of Si suppressor. The physical mechanism on the change of the sheet resistance and the contact resistance in a-SZTO TFT has been investigated and proposed closely related with the Si ratio. Both resistances were increased as increasing Si ratio, which clearly indicated that the role of Si is a carrier suppressor directly leading to the increase of channel and contact resistances. To explain the role of Si as a carrier suppressor, the conduction band offset mechanism has been also proposed depending on the change of carrier concentration in channel layer and at the interface between electrode and channel layer. 2007.01-2011.12 Senior Researcher at korea institute of science and technology (KOREA). 2008.01-2011.12 Professor at University of Science and Technology (KOREA). 1995.01-2007.12 Professor at Yonsei University (KOREA). 2002.01-2003.12 Inviting Researcher at Los Alamos National Lab (USA). 1993.01-1995.12 Senior Researcher at Electronics and Telecommunications Research Institute (KOREA). 1992.01-1993.01 Research Associate at State University of New York at Buffalo (USA).

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Toward High Carrier Mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

Institute of Scientific and Technical Information of China (English)

Yuehui Jia; Xin Gong; Pei Peng; Zidong Wang; Zhongzheng Tian; Liming Ren; Yunyi Fu; Han Zhang

2016-01-01

Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.

Contact resistance measurement structures for high frequencies

NARCIS (Netherlands)

Roy, Deepu; Pijper, Ralf M.T.; Tiemeijer, Luuk F.; Wolters, Robertus A.M.

2011-01-01

Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto

Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor

KAUST Repository

Sun, Jian; Kosel, Jü rgen

2011-01-01

.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Science.gov (United States)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

Science.gov (United States)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

Science.gov (United States)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

Experimental Characterization and Modeling of Thermal Contact Resistance of Electric Machine Stator-to-Cooling Jacket Interface Under Interference Fit Loading

Energy Technology Data Exchange (ETDEWEB)

Cousineau, Justine E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bennion, Kevin S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Chieduko, Victor [UQM Technologies, Inc.; Lall, Rajiv [UQM Technologies, Inc.; Gilbert, Alan [UQM Technologies, Inc.

2018-05-08

Cooling of electric machines is a key to increasing power density and improving reliability. This paper focuses on the design of a machine using a cooling jacket wrapped around the stator. The thermal contact resistance (TCR) between the electric machine stator and cooling jacket is a significant factor in overall performance and is not well characterized. This interface is typically an interference fit subject to compressive pressure exceeding 5 MPa. An experimental investigation of this interface was carried out using a thermal transmittance setup using pressures between 5 and 10 MPa. The results were compared to currently available models for contact resistance, and one model was adapted for prediction of TCR in future motor designs.

Degradation pattern of black phosphorus multilayer field-effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Science.gov (United States)

Lee, Byung Chul; Kim, Chul Min; Jang, Ho-Kyun; Lee, Jae Woo; Joo, Min-Kyu; Kim, Gyu-Tae

2017-10-01

Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field-effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (VTH), carrier mobility (μ), contact resistance (RCT) and channel resistance (RCH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that RCT reduces and then, increases with time; whereas, the behavior of RCH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively.

A new player in race-specific resistance

KAUST Repository

Keller, Beat; Krattinger, Simon G.

2018-01-01

Race-specific resistance genes represent essential genetic sources in crop breeding. Map-based cloning of the wheat Stb6 gene against Zymoseptoria tritici identified a wall-associated receptor kinase-like protein as a novel player in race

Contact transmission of influenza virus between ferrets imposes a looser bottleneck than respiratory droplet transmission allowing propagation of antiviral resistance

Science.gov (United States)

Frise, Rebecca; Bradley, Konrad; van Doremalen, Neeltje; Galiano, Monica; Elderfield, Ruth A.; Stilwell, Peter; Ashcroft, Jonathan W.; Fernandez-Alonso, Mirian; Miah, Shahjahan; Lackenby, Angie; Roberts, Kim L.; Donnelly, Christl A.; Barclay, Wendy S.

2016-01-01

Influenza viruses cause annual seasonal epidemics and occasional pandemics. It is important to elucidate the stringency of bottlenecks during transmission to shed light on mechanisms that underlie the evolution and propagation of antigenic drift, host range switching or drug resistance. The virus spreads between people by different routes, including through the air in droplets and aerosols, and by direct contact. By housing ferrets under different conditions, it is possible to mimic various routes of transmission. Here, we inoculated donor animals with a mixture of two viruses whose genomes differed by one or two reverse engineered synonymous mutations, and measured the transmission of the mixture to exposed sentinel animals. Transmission through the air imposed a tight bottleneck since most recipient animals became infected by only one virus. In contrast, a direct contact transmission chain propagated a mixture of viruses suggesting the dose transferred by this route was higher. From animals with a mixed infection of viruses that were resistant and sensitive to the antiviral drug oseltamivir, resistance was propagated through contact transmission but not by air. These data imply that transmission events with a looser bottleneck can propagate minority variants and may be an important route for influenza evolution. PMID:27430528

Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

Science.gov (United States)

Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

2018-03-01

Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

Flexible textile-based strain sensor induced by contacts

International Nuclear Information System (INIS)

Zhang, Hui

2015-01-01

In this paper, the contact effects are used as the key sensing element to develop flexible textile-structured strain sensors. The structures of the contact are analyzed theoretically and the contact resistances are investigated experimentally. The electromechanical properties of the textiles are investigated to find the key factors which determine the sensitivity, repeatability, and linearity of the sensor. The sensing mechanism is based on the change of contact resistance induced by the change of the configuration of the textiles. In order to improve the performance of the textile strain sensor, the contact resistance is designed based on the electromechanical properties of the fabric. It can be seen from the results that the performance of the sensor is largely affected by the structure of the contacts, which are determined by the morphology of fiber surface and the structures of the yarn and fabric. (paper)

Effect of thermal contact resistances on fast charging of large format lithium ion batteries

International Nuclear Information System (INIS)

Ye, Yonghuang; Saw, Lip Huat; Shi, Yixiang; Somasundaram, Karthik; Tay, Andrew A.O.

2014-01-01

Highlights: • The effect of thermal contact resistance on thermal performance of large format lithium ion batteries. • The effect of temperature gradient on electrochemical performance of large format batteries during fast charging. • The thermal performance of lithium ion battery utilizing pulse charging protocol. • Suggestions on battery geometry design optimization to improve thermal performance. - Abstract: A two dimensional electrochemical thermal model is developed on the cross-plane of a laminate stack plate pouch lithium ion battery to study the thermal performance of large format batteries. The effect of thermal contact resistance is taken into consideration, and is found to greatly increase the maximum temperature and temperature gradient of the battery. The resulting large temperature gradient would induce in-cell non-uniformity of charging-discharging current and state of health. Simply increasing the cooling intensity is inadequate to reduce the maximum temperature and narrow down the temperature difference due to the poor cross-plane thermal conductivity. Pulse charging protocol does not help to mitigate the temperature difference on the bias of same total charging time, because of larger time-averaged heat generation rate than constant current charging. Suggestions on battery geometry optimizations for both prismatic/pouch battery and cylindrical battery are proposed to reduce the maximum temperature and mitigate the temperature gradient within the lithium ion battery

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

2016-01-01

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.

2016-11-30

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Influence of Compaction During Reaction Heat Treatment on the Interstrand Contact Resistances of Nb3Sn Rutherford Cables

NARCIS (Netherlands)

Collings, E.W.; Sumption, Mike D.; Majoros, Milan; Wang, Xiaorong; Dietderich, Daniel R.; Yagotyntsev, K.; Nijhuis, Arend

2018-01-01

The amplitudes of multipoles in the bore fields of dipole and quadrupole magnets, induced by ramp-rate-dependent coupling currents, are under the control of the interstrand contact resistances - crossing-strand, Rc, adjacent strand, Ra, or a combination of them, Reff. Although two decades ago it was

Investigation of electrochemical intrusion of cations by the method of contact electric resistance

International Nuclear Information System (INIS)

Marichev, V.A.

1997-01-01

Paper shows the possibility and prospects of application of contact electric resistance technique (CER) to study in-situ the initial stages of electrochemical admission of cations (ECA). ECA is shown to increase CER of metals. It enables to determine ECA potential and to investigate kinetics of this process. Using ECA in copper, silver and zinc from alkali solutions as an example one has shown that CER technique enables to obtain results that do not contradict well-known published data. Potentials of ECA cations from acid and neutral solutions in copper, platinum, iron, titanium and tungsten are determined

Nasal carriage of methicillin-resistant coagulase-negative staphylococci in healthy humans is associated with occupational pig contact in a dose-response manner.

Science.gov (United States)

Li, Ling; Chen, Zhiyao; Guo, Dan; Li, Shunming; Huang, Jingya; Wang, Xiaolin; Yao, Zhenjiang; Chen, Sidong; Ye, Xiaohua

2017-09-01

This study aimed to explore the association between occupational pig contact and human methicillin-resistant coagulase-negative staphylococci (MRCoNS) carriage. We conducted a cross-sectional study of pig exposed participants and controls in Guangdong, China, using a multi-stage sampling design. Participants provided a nasal swab for MRCoNS analysis and resulting isolates were tested for antibiotic susceptibility. The dose-response relation was examined using log binomial regression or Poisson regression models. The adjusted prevalence of MRCoNS carriage in pig exposed participants was 1.67 times (95% CI: 1.32-2.11) higher than in controls. The adjusted average number of resistance to different antibiotic classes of MRCoNS isolates from pig exposed participants was 1.67 times (95% CI: 1.46-1.91) higher than those from controls. Notably, we found the frequency and duration of occupational pig contact was associated with increased prevalence and increased number of resistance to different antibiotic classes of MRCoNS in a dose-response manner. When examining these relations by MRCoNS species, there was still evidence of similar exposure-response relations. Additionally, the proportion of tetracycline-resistant and tet(M)-containing MRCoNS isolates was significantly higher in pig exposed participants than in controls. These findings suggested a potential transmission of MRCoNS from livestock to humans by occupational livestock contact, and the presence of phenotypic and genotypic tetracycline resistance may aid in the differentiation of animal origins of MRCoNS isolates. Copyright © 2017 Elsevier B.V. All rights reserved.

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

International Nuclear Information System (INIS)

Ramón, Michael E.; Movva, Hema C. P.; Fahad Chowdhury, Sk.; Parrish, Kristen N.; Rai, Amritesh; Akinwande, Deji; Banerjee, Sanjay K.; Magnuson, Carl W.; Ruoff, Rodney S.

2014-01-01

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R C ) and access resistance (R A ). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f T ) after doping, as compared to ∼23% f T improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R C on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R A for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates

The effect of boron implantation on the corrosion behaviour, microhardness and contact resistance of copper and silver surfaces

International Nuclear Information System (INIS)

Henriksen, O.; Johnson, E.; Johansen, A.; Sarholt-Kristensen, L.

1986-01-01

In order to investigate the influence of boron implantation on the corrosion resistance of electrical contacts, a number of pure copper, pure silver and copper edge connector samples have been implanted with boron (40 keV) to fluences of 5.10 20 m -2 and 2.10 21 m -2 . Atmospheric corrosion tests of the implanted species were conducted using the following exposures: H 2 S (12.5 ppm, 4 days), SO 2 (25 ppm, 21 days), saltfog (5% NaCl, 1 day), moist air (93% RH, 56 days), and hot/dry air (70 C, 56 days). The boron implantations lead to a significant reduction in the sulphidation rate of copper and silver. The corrosive film formed during exposure in H 2 S and SO 2 atmospheres is confined to pitted regions on the implanted areas, while a thick and relatively uniform film formation is observed on the unimplanted samples. The corrosion resistance of copper and silver in saltfog atmosphere is somewhat improved by boron implantation, whilst the results from exposures to moist air or hot/dry air are inconclusive. The improved corrosion behaviour is accompanied by an increase in the contact resistance and in the microhardness of the implanted samples. (orig.)

Equilibrium contact angle or the most-stable contact angle?

Science.gov (United States)

Montes Ruiz-Cabello, F J; Rodríguez-Valverde, M A; Cabrerizo-Vílchez, M A

2014-04-01

It is well-established that the equilibrium contact angle in a thermodynamic framework is an "unattainable" contact angle. Instead, the most-stable contact angle obtained from mechanical stimuli of the system is indeed experimentally accessible. Monitoring the susceptibility of a sessile drop to a mechanical stimulus enables to identify the most stable drop configuration within the practical range of contact angle hysteresis. Two different stimuli may be used with sessile drops: mechanical vibration and tilting. The most stable drop against vibration should reveal the changeless contact angle but against the gravity force, it should reveal the highest resistance to slide down. After the corresponding mechanical stimulus, once the excited drop configuration is examined, the focus will be on the contact angle of the initial drop configuration. This methodology needs to map significantly the static drop configurations with different stable contact angles. The most-stable contact angle, together with the advancing and receding contact angles, completes the description of physically realizable configurations of a solid-liquid system. Since the most-stable contact angle is energetically significant, it may be used in the Wenzel, Cassie or Cassie-Baxter equations accordingly or for the surface energy evaluation. © 2013 Elsevier B.V. All rights reserved.

Perspectives on setting limits for RF contact currents: a commentary.

Science.gov (United States)

Tell, Richard A; Tell, Christopher A

2018-01-15

Limits for exposure to radiofrequency (RF) contact currents are specified in the two dominant RF safety standards and guidelines developed by the Institute of Electrical and Electronics Engineers (IEEE) and the International Commission on Non-Ionizing Radiation Protection (ICNIRP). These limits are intended to prevent RF burns when contacting RF energized objects caused by high local tissue current densities. We explain what contact currents are and review some history of the relevant limits with an emphasis on so-called "touch" contacts, i.e., contact between a person and a contact current source during touch via a very small contact area. Contact current limits were originally set on the basis of controlling the specific absorption rate resulting from the current flowing through regions of small conductive cross section within the body, such as the wrist or ankle. More recently, contact currents have been based on thresholds of perceived heating. In the latest standard from the IEEE developed for NATO, contact currents have been based on two research studies in which thresholds for perception of thermal warmth or thermal pain have been measured. Importantly, these studies maximized conductive contact between the subject and the contact current source. This factor was found to dominate the response to heating wherein high resistance contact, such as from dry skin, can result in local heating many times that from a highly conductive contact. Other factors such as electrode size and shape, frequency of the current and the physical force associated with contact are found to introduce uncertainty in threshold values when comparing data across multiple studies. Relying on studies in which the contact current is minimized for a given threshold does not result in conservative protection limits. Future efforts to develop limits on contact currents should include consideration of (1) the basis for the limits (perception, pain, tissue damage); (2) understanding of the

Genetics and molecular mapping of genes for race-specific all-stage resistance and non-race-specific high-temperature adult-plant resistance to stripe rust in spring wheat cultivar Alpowa.

Science.gov (United States)

Lin, F; Chen, X M

2007-05-01

Stripe rust, caused by Puccinia striiformis f. sp. tritici, is one of the most widespread and destructive wheat diseases worldwide. Growing resistant cultivars is the preferred control of the disease. The spring wheat cultivar 'Alpowa' has both race-specific, all-stage resistance and non-race-specific, high-temperature adult-plant (HTAP) resistances to stripe rust. To identify genes for the stripe rust resistances, Alpowa was crossed with 'Avocet Susceptible' (AVS). Seedlings of the parents, and F(1), F(2) and F(3) progeny were tested with races PST-1 and PST-21 of P. striiformis f. sp. tritici under controlled greenhouse conditions. Alpowa has a single partially dominant gene, designated as YrAlp, conferring all-stage resistance. Resistance gene analog polymorphism (RGAP) and simple sequence repeat (SSR) techniques were used to identify molecular markers linked to YrAlp. A linkage group of five RGAP markers and two SSR markers was constructed for YrAlp using 136 F(3) lines. Amplification of a set of nulli-tetrasomic Chinese Spring lines with RGAP markers Xwgp47 and Xwgp48 and the two SSR markers indicated that YrAlp is located on the short arm of chromosome 1B. To map quantitative trait loci (QTLs) for the non-race-specific HTAP resistance, the parents and 136 F(3) lines were tested at two sites near Pullman and one site near Mount Vernon, Washington, under naturally infected conditions. A major HTAP QTL was consistently detected across environments and was located on chromosome 7BL. Because of its chromosomal location and the non-race-specific nature of the HTAP resistance, this gene is different from previously described genes for adult-plant resistance, and is therefore designated Yr39. The gene contributed to 64.2% of the total variation of relative area under disease progress curve (AUDPC) data and 59.1% of the total variation of infection type data recorded at the heading-flowering stages. Two RGAP markers, Xwgp36 and Xwgp45 with the highest R (2) values

NMOS contact resistance reduction with selenium implant into NiPt silicide

Science.gov (United States)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

Energy Technology Data Exchange (ETDEWEB)

Ramón, Michael E., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Movva, Hema C. P., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Fahad Chowdhury, Sk.; Parrish, Kristen N.; Rai, Amritesh; Akinwande, Deji; Banerjee, Sanjay K. [Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758 (United States); Magnuson, Carl W.; Ruoff, Rodney S. [Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-02-17

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R{sub C}) and access resistance (R{sub A}). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f{sub T}) after doping, as compared to ∼23% f{sub T} improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R{sub C} on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R{sub A} for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates.

Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices

NARCIS (Netherlands)

Torricelli, F.; Meijboom, J.R.; Smits, E.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Leeuw, D. de; Cantatore, E.

2011-01-01

Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for

Transport physics and device modeling of zinc oxide thin film transistors - part II : contact resistance in short channel devices

NARCIS (Netherlands)

Torricelli, F.; Smits, E.C.P.; Meijboom, J.R.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Cantatore, E.

2011-01-01

Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the

Geophysical Characterization of the Quaternary-Cretaceous Contact Using Surface Resistivity Methods in Franklin and Webster Counties, South-Central Nebraska

Science.gov (United States)

Teeple, Andrew; Kress, Wade H.; Cannia, James C.; Ball, Lyndsay B.

2009-01-01

Formation made accurate interpretation of the resistivity profile sections difficult and less confident because of similar resistivity of this formation and that of the coarser-grained sediment of the Quaternary-age deposits. However, distinct conductive features were identified within the resistivity profile sections that aided in delineating the contact between the resistive Quaternary-age deposits and the resistive Niobrara Formation. Using this information, an interpretive boundary was drawn on the resistivity profile sections to represent the contact between the Quaternary-age alluvial deposits and the Cretaceous-age Niobrara Formation. A digital elevation model (DEM) of the top of the Niobrara Formation was constructed using the altitudes from the interpreted contact lines. This DEM showed that the general trend of top of the Niobrara Formation dips to the southeast. At the north edge of the study site, the Niobrara Formation topographic high trends east-west with an altitude range of 559 meters in the west to 543 meters in the east. Based on the land-surface elevation and the Niobrara Formation DEM, the estimated thickness of the Quaternary-age alluvial deposits throughout the study area was mapped and showed a thinning of the Quaternary-age alluvial deposits to the north, approximately where the topographic high of the Niobrara Formation is located. This topographic high in the Niobrara Formation has the potential to act as a barrier to ground-water flow from the uplands alluvial aquifer to the Republican River alluvial aquifer as shown in the resistivity profile sections. The Quaternary-age alluvial deposits in the uplands and those in the Republican River Valley are not fully represented as disconnected because it is possible that there are ground-water flow paths that were not mapped during this study.

Measurement of Dynamic Resistance in Resistance Spot Welding

DEFF Research Database (Denmark)

Wu, Pei; Zhang, Wenqi; Bay, Niels

Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side of the transfo......Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side...... of the transformer in resistance welding machines, implying defects from induction noise and interference with the leads connected to the electrodes for measuring the voltage. In this study, the dynamic resistance is determined by measuring the voltage on the primary side and the current on the secondary side...

Measurement of inter-strand contact resistance in epoxy impregnated Nb3Sn Rutherford cables

International Nuclear Information System (INIS)

Giorgio Ambrosio

2003-01-01

An apparatus for the measurement, under transverse pressure, of the inter-strand contact resistance in epoxy-impregnated Nb 3 Sn Rutherford cables has been recently assembled at Fermilab. Procedures have been developed to instrument and measure samples extracted from Nb 3 Sn coils. Samples were extracted from coils fabricated with the Wind-and-React and the React-and-Wind technology, both presently under development at Fermilab. A ceramic binder is used to improve the insulation and to simplify the fabrication of coils using the Wind-and-React technology. Synthetic oil is used to prevent sintering during the heat treatment of coils to be wound after reaction. In order to evaluate the effects of the ceramic binder and of the synthetic oil on the inter-strand resistance, measurements of samples extracted from coils were compared with measurements of cable stacks with varying characteristics. In this paper we describe the apparatus, the sample preparation, the measurement procedure, and the results of the first series of tests

A new contact electric resistance technique for in-situ measurement of the electric resistance of surface films on metals in electrolytes at high temperatures and pressures

International Nuclear Information System (INIS)

Saario, T.; Marichev, V.A.

1993-01-01

Surface films play a major role in corrosion assisted cracking. A new Contact Electric Resistance (CER) method has been recently developed for in situ measurement of the electric resistance of surface films. The method has been upgraded for high temperature high pressure application. The technique can be used for any electrically conductive material in any environment including liquid, gas or vacuum. The technique has been used to determine in situ the electric resistance of films on metals during adsorption of water and anions, formation and destruction of oxides and hydrides, electroplating of metals and to study the electric resistance of films on semiconductors. The resolution of the CER technique is 10 -9 Ω, which corresponds to about 0.03 monolayers of deposited copper during electrochemical deposition Cu/Cu 2+ . Electric resistance data can be measured with a frequency of the order of one hertz, which enables one to follow in situ the kinetics of surface film related processes. The kinetics of these processes and their dependence on the environment, temperature, pH and electrochemical potential can be investigated

Effect of surface treatment on the interfacial contact resistance and corrosion resistance of Fe–Ni–Cr alloy as a bipolar plate for polymer electrolyte membrane fuel cells

International Nuclear Information System (INIS)

Yang, Meijun; Zhang, Dongming

2014-01-01

The bipolar plate is an important component of the PEMFC (polymer electrolyte membrane fuel cell) because it supplies the pathway of electron flow between each unit cell. Fe–Ni–Cr alloy is considered as a good candidate material for bipolar plate, but it is limited to use as a bipolar plate due to its high ICR (interfacial contact resistance) and corrosion problem. In order to explore a cost-effective method on surface modification, various chemical and electrochemical treatments are performed on Fe–Ni–Cr alloy to acquire the effect of the surface modification on the ICR and corrosion behavior. The ICR and corrosion resistance of Fe–Ni–Cr alloy can be effectively controlled by the chemical treatment of immersion in the mixed acid solution with 10 vol% HNO 3 , 2 vol% HCl and 1 vol% HF for 10 min at 65 °C and then was placed in 30 vol% HNO 3 solution for 5 min. The chemical treatment is more effective on reducing ICR and improving corrosion resistance than that of electrochemical methods (be carried out in the 2 mol/L H 2 SO 4 solution with the electrical potential from −0.4 V to 0.6 V) for Fe–Ni–Cr alloy as a bipolar plate for polymer electrolyte membrane fuel cells. - Highlights: • The procedure of the surface treatments on Fe–Ni–Cr alloy as bipolar plate was described in detail. • Effects of various surface treatments on the interfacial contact resistivity and corrosion behavior were discussed. • The mechanism of the surface modification was particularly analyzed

Current simulation of symmetric contacts on CdTe

International Nuclear Information System (INIS)

Ruzin, A.

2011-01-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Current simulation of symmetric contacts on CdTe

Energy Technology Data Exchange (ETDEWEB)

Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

2011-12-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Racing with friends: Resistance to peer influence, gist and specific risk beliefs.

Science.gov (United States)

Mirman, Jessica H; Curry, Allison E

2016-11-01

Studies assessing young drivers' risk appraisals with their driving behavior have shown both positive and inverse associations, possibly due to differences in survey items that cue gist appraisals about risk (i.e., beliefs that are focused on meaning) or specific appraisals (i.e., beliefs that are focused on discrete instances). Prior research has indicated that gist-based reasoning is protective against engaging in risk behavior and that use of gist appraisals increases with development. Additionally, although much of adolescents' risk-taking occurs in groups, almost no research examines how adolescents' resistance to peer influence may relate to their specific and gist beliefs about socially-bound risk behavior, as well as their future engagement in such behavior. One hundred and thirty-two adolescent drivers participated in a prospective self-report study on racing behavior. Surveys measured specific and gist risk appraisals, resistance to peer influence, and racing behavior at two time points three months apart. We hypothesized that stronger specific appraisals would be associated with greater likelihood of racing, and stronger gist appraisals would be protective. Further, we hypothesized that resistance to peer influence would be positively associated with gist appraisals and negatively associated with specific risk appraisals; and would also be inversely associate with racing. Specific risk appraisals and gist appraisals were predictive of racing behavior as hypothesized. Resistance to peer influence did not predict racing, but was associated with each type of risk appraisal as predicted at Time 1, although the association between specific risk and resistance to peer influence was non-significant at the second time point. Gist beliefs and the ability to resist influence from friends might be indicative of an underlying strength of one's own beliefs about the self as a non-risk taking person who stands up for his or her beliefs, which is protective against

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance

Science.gov (United States)

Basiricò, L.; Lanzara, G.

2012-08-01

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs’ length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode’s thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58 822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease).

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance

International Nuclear Information System (INIS)

Basiricò, L; Lanzara, G

2012-01-01

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs’ length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode’s thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58 822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease). (paper)

American Contact Dermatitis Society Contact Allergy Management Program: An Epidemiologic Tool to Determine Relative Prevalence of Contact Allergens.

Science.gov (United States)

Scheman, Andrew; Severson, David

2016-01-01

Data on the prevalence of contact allergy in North America are currently reported by groups of academic contact allergy specialists at select academic centers. Sampling of data from numerous centers across North America, including practices performing more limited patch testing, would provide a broader perspective of contact allergen prevalence in North America. The American Contact Dermatitis Society Contact Allergy Management Program is an ideal tool for collection of epidemiologic data regarding contact allergy prevalence in North America. The aim of the study was to identify the relative prevalence of contact allergy to common contact allergens in North America. Mapping of Contact Allergy Management Program (CAMP) data was performed to allow analysis of how frequently searches were performed for various contact allergens. The number of searches performed for specific allergens provides a measure of the relative prevalence of contact allergy to these allergens. The top 35 allergens for the period from November 18, 2012 to November 18, 2013 are reported. Although these data are useful, specific recommendations for minor alterations to CAMP are discussed, which will allow future CAMP data to be stratified and more powerful. With minor modifications, CAMP can provide a quantum leap in the reporting of contact allergy epidemiologic data in North America.

Design and fabrication stable LNF contact for future IC application

International Nuclear Information System (INIS)

Bhuiyan, M M I; Bhuiyan, M; Rashid, M M; Ahmed, Sayem; Kajihara, M

2013-01-01

Enable the design of a small contact spring for applications requiring high density, high speed and high durability. A low normal force (LNF) contact spring with high performance is fabricated using a unique combined MEMS photo resist lithography and electro fine forming (EFF) technology. Reducing a total contact material cost of a connector, a high-Hertz stress with LNF contact will be a key technology in the future. Only radius R 5μm tip with 0.1N force contact provides an excellent electrical performance which is much sharper than conventional contact. 0.30million cycle's durability test was passed at 300μm displacement and the contact resistance was ≤50mΩ

Titanium contacts to graphene: process-induced variability in electronic and thermal transport

Science.gov (United States)

Freedy, Keren M.; Giri, Ashutosh; Foley, Brian M.; Barone, Matthew R.; Hopkins, Patrick E.; McDonnell, Stephen

2018-04-01

Contact resistance (R C) is a major limiting factor in the performance of graphene devices. R C is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by x-ray photoelectron spectroscopy, and the Ti/graphene contact resistance measured by the transfer length method. We find that contact composition is tunable via deposition rate and base pressure. Reactor base pressure is found to effect the resultant contact resistance. The effect of contact deposition conditions on thermal transport measured by time-domain thermoreflectance is also reported. Interfaces with higher oxide composition appear to result in a lower thermal boundary conductance. Possible origins of this thermal boundary conductance change with oxide composition are discussed.

Electrochemical deposition of buried contacts in high-efficiency crystalline silicon photovoltaic cells

DEFF Research Database (Denmark)

Jensen, Jens Arne Dahl; Møller, Per; Bruton, Tim

2003-01-01

This article reports on a newly developed method for electrochemical deposition of buried Cu contacts in Si-based photovoltaic ~PV! cells. Contact grooves, 20 mm wide by 40 mm deep, were laser-cut into Si PV cells, hereafter applied with a thin electroless NiP base and subsequently filled with Cu...... by electrochemical deposition at a rate of up to 10 mm per min. With the newly developed process, void-free, superconformal Cu-filling of the laser-cut grooves was observed by scanning electron microscopy and focused ion beam techniques. The Cu microstructure in grooves showed both bottom and sidewall texture......, with a grain-size decreasing from the center to the edges of the buried Cu contacts and a pronounced lateral growth outside the laser-cut grooves. The measured specific contact resistances of the buried contacts was better than the production standard. Overall performance of the new PV cells was equal...

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Directory of Open Access Journals (Sweden)

Filippo Giannazzo

2017-01-01

Full Text Available Molybdenum disulphide (MoS2 is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ and the threshold voltage (Vth. This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. From the analysis of the transfer characteristics (ID−VG in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel was also determined and it was found to increase with T as RC proportional to T3.1. The contribution of RC to the extraction of μ and Vth was evaluated, showing a more than 10% underestimation of μ when the effect of RC is neglected, whereas the effect on Vth is less significant. The temperature dependence of μ and Vth was also investigated. A decrease of μ proportional to 1/Tα with α = 1.4 ± 0.3 was found, indicating scattering by optical phonons as the main limiting mechanism for mobility above room temperature. The value of Vth showed a large negative shift (about 6 V increasing the temperature from 298 to 373 K, which was explained in terms of electron

Characterization of Contact and Bulk Thermal Resistance of Laminations for Electric Machines

Energy Technology Data Exchange (ETDEWEB)

Cousineau, J. Emily [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bennion, Kevin [National Renewable Energy Laboratory (NREL), Golden, CO (United States); DeVoto, Doug [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mihalic, Mark [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Narumanchi, Sreekant [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2015-06-30

The ability to remove heat from an electric machine depends on the passive stack thermal resistances within the machine and the convective cooling performance of the selected cooling technology. This report focuses on the passive thermal design, specifically properties of the stator and rotor lamination stacks. Orthotropic thermal conductivity, specific heat, and density are reported. Four materials commonly used in electric machines were tested, including M19 (29 and 26 gauge), HF10, and Arnon 7 materials.

Magnetic field and contact resistance dependence of non-local charge imbalance

International Nuclear Information System (INIS)

Kleine, A; Baumgartner, A; Trbovic, J; Schoenenberger, C; Golubev, D S; Zaikin, A D

2010-01-01

Crossed Andreev reflection (CAR) in metallic nanostructures, a possible basis for solid-state electron entangler devices, is usually investigated by detecting non-local voltages in multi-terminal superconductor/normal metal devices. This task is difficult because other subgap processes may mask the effects of CAR. One of these processes is the generation of charge imbalance (CI) and the diffusion of non-equilibrium quasi-particles in the superconductor. Here we demonstrate a characteristic dependence of non-local CI on a magnetic field applied parallel to the superconducting wire, which can be understood by a generalization of the standard description of CI to non-local experiments. These results can be used to distinguish CAR and CI and to extract CI relaxation times in superconducting nanostructures. In addition, we investigate the dependence of non-local CI on the resistance of the injector and detector contacts and demonstrate a quantitative agreement with a recent theory using only material and junction characteristics extracted from separate direct measurements.

Silver antimony Ohmic contacts to moderately doped n-type germanium

Energy Technology Data Exchange (ETDEWEB)

Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2014-04-21

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Energy Technology Data Exchange (ETDEWEB)

Münzenrieder, Niko, E-mail: muenzenrieder@ife.ee.ethz.ch; Salvatore, Giovanni A.; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Vogt, Christian; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory Swiss Federal Institute of Technology (ETH) Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

2014-12-29

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (L{sub OV}) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on L{sub OV}. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Science.gov (United States)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Improvement of the electrical contact resistance at rough interfaces using two dimensional materials

Energy Technology Data Exchange (ETDEWEB)

Hu, Jianchen; Pan, Chengbin; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Li, Heng [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); CAPT, HEDPS and IFSA Collaborative Innovation Center of MoE, Peking University, Beijing 100871 (China); Shen, Panpan; Sun, Hui; Duan, Huiling [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering, Peking University, Beijing 100871 (China)

2015-12-07

Reducing the electronic contact resistance at the interfaces of nanostructured materials is a major goal for many kinds of planar and three dimensional devices. In this work, we develop a method to enhance the electronic transport at rough interfaces by inserting a two dimensional flexible and conductive graphene sheet. We observe that an ultra-thin graphene layer with a thickness of 0.35 nm can remarkably reduce the roughness of a sample in a factor of 40%, avoiding the use of thick coatings, leading to a more homogeneous current flow, and extraordinarily increasing the total current compared to the graphene-free counterpart. Due to its simplicity and performance enhancement, this methodology can be of interest to many interface and device designers.

Reduced autobiographical memory specificity relates to weak resistance to proactive interference.

Science.gov (United States)

Smets, Jorien; Wessel, Ineke; Raes, Filip

2014-06-01

Reduced autobiographical memory specificity (rAMS), experiencing intrusive memories, and rumination appear to be risk factors for depression and depressive relapse. The aim of the current study was to investigate whether a weak resistance to proactive interference (PI) might underlie this trio of cognitive risk factors. Resistance to PI refers to being able to ignore cognitive distracters that were previously relevant but became irrelevant for current task goals. Students (N = 65) and depressed patients (N = 37) completed tasks measuring resistance to PI and AMS, and completed questionnaires on intrusive memories and rumination. In both samples, weaker resistance to PI was associated with rAMS. There was no evidence for a relationship between resistance to PI and intrusive memories or rumination. As we did not assess other measures of executive functioning, we cannot conclude whether the observed relationship between rumination and PI is due to unique qualities of PI. Difficulties to deliberately recall specific, rather than general or categoric autobiographical memories appear to be related to more general problems with the inhibition of interference of mental distracters. The results are in line with the executive control account of rAMS. Copyright © 2013 Elsevier Ltd. All rights reserved.

Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

Science.gov (United States)

Simchi, Hamed; Cooley, Kayla A; Ding, Zelong; Molina, Alex; Mohney, Suzanne E

2018-05-16

Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( R c ) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications. To engineer the Schottky barrier between the metal contact and GeTe, Sn was tested as an interesting candidate to alter the composition of the semiconductor near its surface, potentially forming a narrow band gap (0.2 eV) SnTe or a graded alloy with SnTe in GeTe. For this purpose, a novel contact stack of Sn/Fe/Au was employed and compared to a conventional Ti/Pt/Au stack. Two different premetallization surface treatments of HCl and deionized (DI) H 2 O were employed to make a Te-rich and Ge-rich interface, respectively. Contact resistance values were extracted using the refined transfer length method. The best results were obtained with DI H 2 O for the Sn-based contacts but HCl treatment for the Ti/Pt/Au contacts. The as-deposited contacts had the R c (ρ c ) of 0.006 Ω·mm (8 × 10 -9 Ω·cm 2 ) for Sn/Fe/Au and 0.010 Ω·mm (3 × 10 -8 Ω·cm 2 ) for Ti/Pt/Au. However, the Sn/Fe/Au contacts were thermally stable, and their resistance decreased further to 0.004 Ω·mm (4 × 10 -9 Ω·cm 2 ) after annealing at 200 °C. In contrast, the contact resistance of the Ti/Pt/Au stack increased to 0.012 Ω·mm (4 × 10 -8 Ω·cm 2 ). Transmission electron microscopy was used to characterize the interfacial reactions between the metals and GeTe. It was found that formation of SnTe at the interface, in addition to Fe diffusion (doping) into GeTe, is likely responsible for the superior performance of Sn/Fe/Au contacts, resulting in one of the lowest reported

Pentacene ohmic contact on the transparent conductive oxide films

International Nuclear Information System (INIS)

Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

2010-01-01

Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

Science.gov (United States)

Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

2015-07-01

Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

Understanding the influence of tellurium oxide in front Ag paste for contacting silicon solar cells with homogeneous high sheet resistance emitter

Science.gov (United States)

Ebong, Abasifreke; Bezawada, Nirupama; Batchu, Kartheek

2017-08-01

This paper investigates TeO2, one of the front Ag paste additives, to understand its role in low contact and gridline resistances for screen-printed Si solar cell. It is concluded that TeO2 aids the reduction of molten glass frit viscosity during contact co-firing. This in turn, leads to uniform flow of molten glass frit, both in the gridline bulk and interface of gridline and SiN x . Therefore, the uniform wetting and etching of SiN x and consequently larger contact area of metal to Si compared to its counterpart without TeO2. Hence, the current transport mechanism from Si to gridline can be said to be both direct and tunneling. The Raman spectra showed a blue shift in the phase of the TeO2 after contact co-firing in the gridline bulk confirming a crystalline γ-TeO2.

Yield of facility-based verbal screening amongst household contacts of patients with multi-drug resistant tuberculosis in Pakistan

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Ejaz Qadeer

2017-05-01

Full Text Available Background: Household contacts of multidrug-resistant tuberculosis (MDR-TB patients are at a high risk of getting infected with TB/MDR-TB, therefore symptomatic or vulnerable individuals should be screened and treated early. Methods: A cross-sectional study was conducted among household contacts of MDR-TB patients in three high-burden TB sites in Pakistan from July 2013 to June 2014. MDR-TB index patients were asked to provide a list of all members of their household and were asked whether any of them had TB symptoms such as productive cough, fever, weight loss and night sweat (“facility-based verbal screening”. Symptomatic contacts were defined as presumptive TB cases and were invited for investigations at the facility. Those who did not come were paid a home-visit. Confirmed TB/MDR-TB patients were registered in the nearest treatment facility. Results: Of 209 MDR-TB index patients, 1467 household contacts were identified and screened, 95 of them children < 5 years. Of these 172 (12% were symptomatic. Most common symptoms were cough 157 (91% and fever 107 (62%. 58 (34% presumptive TB contacts were not investigated. Of total contacts, 56 (3.8% were diagnosed with TB, among them 54(96% with MDR-TB and 2(4% with drug-susceptible-TB. The number needed to screen (NNS to identify a new MDR-TB case among adult household contacts was 27 and among presumptive adult and pediatric TB contacts was three. All 56 confirmed patients were registered for treatment. Conclusion: Screening household contacts of MDR-TB index cases may be considered a feasible and high yield option, in high-burden, low-resource settings within Pakistan. The number of presumptive TB contacts required to screen to identify a new MDR-TB case was unusually low, indicating an effective strategy that could easily be scaled-up. The screening and management of vulnerable adults and children living with patients having TB of any form is a major priority in the combined efforts

Immune responses to the Mycobacterium tuberculosis-specific antigen ESAT-6 signal subclinical infection among contacts of tuberculosis patients

DEFF Research Database (Denmark)

Doherty, T Mark; Demissie, Abebech; Olobo, Joseph

2002-01-01

Diagnosis of latent Mycobacterium tuberculosis infection is considered essential for tuberculosis control but is hampered by the lack of specific reagents. We report that strong recognition of tuberculosis complex-specific antigen ESAT-6 by healthy household contacts of tuberculosis patients...

Improving protein fold recognition by extracting fold-specific features from predicted residue-residue contacts.

Science.gov (United States)

Zhu, Jianwei; Zhang, Haicang; Li, Shuai Cheng; Wang, Chao; Kong, Lupeng; Sun, Shiwei; Zheng, Wei-Mou; Bu, Dongbo

2017-12-01

Accurate recognition of protein fold types is a key step for template-based prediction of protein structures. The existing approaches to fold recognition mainly exploit the features derived from alignments of query protein against templates. These approaches have been shown to be successful for fold recognition at family level, but usually failed at superfamily/fold levels. To overcome this limitation, one of the key points is to explore more structurally informative features of proteins. Although residue-residue contacts carry abundant structural information, how to thoroughly exploit these information for fold recognition still remains a challenge. In this study, we present an approach (called DeepFR) to improve fold recognition at superfamily/fold levels. The basic idea of our approach is to extract fold-specific features from predicted residue-residue contacts of proteins using deep convolutional neural network (DCNN) technique. Based on these fold-specific features, we calculated similarity between query protein and templates, and then assigned query protein with fold type of the most similar template. DCNN has showed excellent performance in image feature extraction and image recognition; the rational underlying the application of DCNN for fold recognition is that contact likelihood maps are essentially analogy to images, as they both display compositional hierarchy. Experimental results on the LINDAHL dataset suggest that even using the extracted fold-specific features alone, our approach achieved success rate comparable to the state-of-the-art approaches. When further combining these features with traditional alignment-related features, the success rate of our approach increased to 92.3%, 82.5% and 78.8% at family, superfamily and fold levels, respectively, which is about 18% higher than the state-of-the-art approach at fold level, 6% higher at superfamily level and 1% higher at family level. An independent assessment on SCOP_TEST dataset showed consistent

Multi-Material Front Contact for 19% Thin Film Solar Cells

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Joop van Deelen

2016-02-01

Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

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Krawczak Ewelina

2017-01-01

Full Text Available The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

Science.gov (United States)

Krawczak, Ewelina; Gułkowski, Sławomir

2017-10-01

The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

Science.gov (United States)

Hou, Minmin; Senesky, Debbie G.

2014-08-01

The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10-5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

Slip-rolling resistance of novel Zr(C,N) thin film coatings under high Hertzian contact pressures

Energy Technology Data Exchange (ETDEWEB)

Manier, Charles-Alix

2010-08-24

Today, coatings are used in many applications ranging from the decoration purposes to the improvement of efficiency such as in machining tools, medical tools, computer devices (hard disks) and many more. Especially the automotive industry anticipates a benefit in using coatings for example in powertrains and gears where the mechanical components are stressed under slip-rolling motion. A cost effective option to increase efficiency is based on the increase of the load carrying capacity by thin film coatings. It would also represent a way towards downsizing. In the work presented here, a small review concerning rolling contact fatigue of coatings was performed. Experimentally it is then shown, that crystalline Zr(C,N) coatings can be slip-rolling resistant at 120 C in factory fill engine oil up to ten million cycles under average Hertzian contact pressures up to P{sub 0mean} = 1.94 GPa (P{sub 0max} = 2.91 GPa). Basically, it represents here the doubling of the normal force acting on the surface compared to uncoated steel traditionally lubricated with fully formulated oil. Typically, the coated substrates are made of the quenched and tempered bearing steel Cronidur 30. The Zr(C,N) coatings were fully characterized using different characterisation techniques in order to understand the difference in slip-rolling resistance under those high tribological demands. Effectively, the slip-rolling resistance of different batches of the Zr(C,N) coatings is evaluated using a defined and powerful testing procedure. Different results of lifetime were achieved without fundamental changes of the deposition procedure. The characterisation achieved permits the identification of microstructural disparities which should affect the load carrying capacity of the coating. Moreover, the efficiency of the high slip-rolling resistant Zr(C,N) coating was considered not only with respect to the improvement of the load carrying capacity of the substrate but also in terms of tribological

Effects of nanoscale coatings on reliability of MEMS ohmic contact switches

Science.gov (United States)

Tremper, Amber Leigh

This thesis examines how the electrical and mechanical behavior of Au thin films is altered by the presence of ultra-thin metallic coatings. To examine the mechanical behavior, nanoindentation, nano-scratch, and atomic force microscopy (AFM) testing was performed. The electrical behavior was evaluated through Kelvin probe contact resistance measurements. This thesis shows that ultra-thin, hard, ductile coatings on a softer, ductile underlying layer (such as Ru or Pt on Au) had a significant effect on mechanical behavior of the system, and can be tailored to control the deformation resistance of the thin film system. Despite Ru and Pt having a higher hardness and plane strain modulus than Au, the Ru and Pt coatings decreased both the hardness and plane strain modulus of the layered system when the indentation depth was on the order of the coating thickness. Alternately, when the indentation depth was several times the coating thickness, the ductile, plastically hard, elastically stiff layer significantly hardened the contact response. These results correlate well with membrane stress theoretical predictions, and demonstrate that membrane theory can be applied even when the ratio of indentation depth, h, to coating thickness, t, is very large ( h/telectrical behavior of the Ru-coated Au films was examined, it was found that all the measured resistances of the Au-only film and Ru-coated systems were several orders of magnitude larger than those predicted by Holm's law, but were still in good agreement with previously reported values in the literature. Previous studies attributed the high contact resistances to a variety of causes, including the buildup of an insulating contamination layer. This thesis determined the cause of the deviations to be large sheet resistance contributions to the total measured resistance. Further, studies on aged samples (with thicker contamination layers) conclusively showed that, while contamination increases the contact resistance, it

Pneumatic muscle actuator (PMA) task-specific resistance for potential use in microgravity exercise.

Science.gov (United States)

Hall, Kara L; Phillips, Chandler A; Reynolds, David B; Mohler, Stanley R; Neidhard-Doll, Amy T

2012-07-01

A pneumatic muscle actuator (PMA) is a device that mimics the behavior of skeletal muscle by contracting and generating force when activated. This type of actuator has a high power to weight ratio and unique characteristics which make it ideal for human interaction. PMAs, however, are difficult to control due to nonlinear dynamics. Our objective was to control a PMA as a source of task-specific resistance in simulated isokinetic strength training. Task-specific resistance will benefit those in need of strength training through a joint's range of motion, including astronauts who need to counteract muscle atrophy during prolonged spaceflight. The lightweight, clean, and compact PMA driven by pressurized air is able to produce resistance in microgravity. An open-loop control method based on a three-element phenomenological inverse model was developed to control the PMA. A motor was simultaneously controlled to act as simulated human quadriceps working against the PMA-produced resistance. For ankle weight replacement resistance profiles, the PMA control method produced resistance and PMA displacement tracking errors (RMSE) of 0.36-1.61 Nm and 0.55-1.59 mm, respectively. Motor position (simulated joint angle) tracking errors ranged from 0.47 to 2.82 degrees. Results indicate that the inverse model based control system produces task-specific PMA resistance and displacement. Closed-loop motor control was able to simulate isokinetic movement successfully. More complicated resistance profiles reveal the need for closed-loop control. Future work focuses on advancing both the PMA control strategies and the capabilities of the human simulator so that actual human operator applications can be realized.

Role of aluminum in silver paste contact to boron-doped silicon emitters

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Wei Wu

2017-01-01

Full Text Available The addition of aluminum to silver metallization pastes has been found to lower the contact resistivity of a silver metallization on boron-doped silicon emitters for n-type Si solar cells. However, the addition of Al also induces more surface recombination and increases the Ag pattern′s line resistivity, both of which ultimately limit the cell efficiency. There is a need to develop a fundamental understanding of the role that Al plays in reducing the contact resistivity and to explore alternative additives. A fritless silver paste is used to allow direct analysis of the impact of Al on the Ag-Si interfacial microstructure and isolate the influence of Al on the electrical contact from the complicated Ag-Si interfacial glass layer. Electrical analysis shows that in a simplified system, Al decreases the contact resistivity by about three orders of magnitude. Detailed microstructural studies show that in the presence of Al, microscale metallic spikes of Al-Ag alloy and nanoscale metallic spikes of Ag-Si alloy penetrate the surface of the boron-doped Si emitters. These results demonstrate the role of Al in reducing the contact resistivity through the formation of micro- and nano-scale metallic spikes, allowing the direct contact to the emitters.

Effects of junction resistance and counterelectrode material on point-contact tunneling into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/

Energy Technology Data Exchange (ETDEWEB)

Moog, E.R.; Hawley, M.E.; Gray, K.E.; Liu, J.Z.; Hinks, D.G.; Capone, D.W. II; Downey, J.

1988-06-01

The effects of junction resistance and counterelectrode material on the results of point-contact tunneling studies into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/ are illustrated. Although reasonably symmetric I(V) curves predominantly indicate energy gap values /Delta/ /approx/ 20 meV, large asymmetries are often found for high-resistance junctions. Very low-resistance junctions show the expected behavior of pure metallic bridge and indicate /Delta/ /approx/ 25-30 meV.

A Study on Graphene—Metal Contact

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Hongyu Yu

2013-03-01

Full Text Available The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 metal preparation method; (2 asymmetric conductance; (3 annealing effect; (4 interfaces impact.

Emergence of Antimicrobial-Resistant Escherichia coli of Animal Origin Spreading in Humans

Science.gov (United States)

Skurnik, David; Clermont, Olivier; Guillard, Thomas; Launay, Adrien; Danilchanka, Olga; Pons, Stéphanie; Diancourt, Laure; Lebreton, François; Kadlec, Kristina; Roux, Damien; Jiang, Deming; Dion, Sara; Aschard, Hugues; Denamur, Maurice; Cywes-Bentley, Colette; Schwarz, Stefan; Tenaillon, Olivier; Andremont, Antoine; Picard, Bertrand; Mekalanos, John; Brisse, Sylvain; Denamur, Erick

2016-01-01

In the context of the great concern about the impact of human activities on the environment, we studied 403 commensal Escherichia coli/Escherichia clade strains isolated from several animal and human populations that have variable contacts to one another. Multilocus sequence typing (MLST) showed a decrease of diversity 1) in strains isolated from animals that had an increasing contact with humans and 2) in all strains that had increased antimicrobial resistance. A specific B1 phylogroup clonal complex (CC87, Institut Pasteur schema nomenclature) of animal origin was identified and characterized as being responsible for the increased antimicrobial resistance prevalence observed in strains from the environments with a high human-mediated antimicrobial pressure. CC87 strains have a high capacity of acquiring and disseminating resistance genes with specific metabolic and genetic determinants as demonstrated by high-throughput sequencing and phenotyping. They are good mouse gut colonizers but are not virulent. Our data confirm the predominant role of human activities in the emergence of antimicrobial resistance in the environmental bacterial strains and unveil a particular E. coli clonal complex of animal origin capable of spreading antimicrobial resistance to other members of microbial communities. PMID:26613786

Application and analysis of palladium vapor deposited on stainless steel for high temperature electrical contacts

International Nuclear Information System (INIS)

Jodeh, S.

2008-01-01

Using electron beam evaporation. Pd thin films of 300 nm thickness have been deposited on 301 stainless steel for high temperature electrical contact studies. The structure and compost ion of the helms were studied in detail x-ray diffraction (XRD), scanning electron microscopy (Sem), electron probe microanalysis (EPMA), and x-ray photoelectron spectroscopy (XP S) with sputter depth profiling. The contact properties such as contact resistance, fretting wear resistance, and thermal stability have been measured.The contact resistance rem ins low after heat-aging in air for 168 h at 150 and 200 deg., but increases significantly after heat-aging at 340 deg.. This increase in contact resistance is caused by the formation of about a 27 nm (1 μin.) thick Pdo. In contrast, the thickness of the Pdo is too thin to cause measurable contact resistance increases after heat-aging at 150 and 200 deg.. The fretting wear resistance of Pd coated 301 stainless steel is better than that of electroplated Sn of ser veal thousand nm thickness. Thus, vapor deposited Pd coating on 301 stainless steel may replace electroplated Sn for electrical contact application at elevated temperatures.

On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

2016-01-01

The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Specific emotions as mediators of the effect of intergroup contact on prejudice: findings across multiple participant and target groups.

Science.gov (United States)

Seger, Charles R; Banerji, Ishani; Park, Sang Hee; Smith, Eliot R; Mackie, Diane M

2017-08-01

Emotions are increasingly being recognised as important aspects of prejudice and intergroup behaviour. Specifically, emotional mediators play a key role in the process by which intergroup contact reduces prejudice towards outgroups. However, which particular emotions are most important for prejudice reduction, as well as the consistency and generality of emotion-prejudice relations across different in-group-out-group relations, remain uncertain. To address these issues, in Study 1 we examined six distinct positive and negative emotions as mediators of the contact-prejudice relations using representative samples of U.S. White, Black, and Asian American respondents (N = 639). Admiration and anger (but not other emotions) were significant mediators of the effects of previous contact on prejudice, consistently across different perceiver and target ethnic groups. Study 2 examined the same relations with student participants and gay men as the out-group. Admiration and disgust mediated the effect of past contact on attitude. The findings confirm that not only negative emotions (anger or disgust, based on the specific types of threat perceived to be posed by an out-group), but also positive, status- and esteem-related emotions (admiration) mediate effects of contact on prejudice, robustly across several different respondent and target groups.

Antibacterial surface design - Contact kill

Science.gov (United States)

Kaur, Rajbir; Liu, Song

2016-08-01

Designing antibacterial surfaces has become extremely important to minimize Healthcare Associated Infections which are a major cause of mortality worldwide. A previous biocide-releasing approach is based on leaching of encapsulated biocides such as silver and triclosan which exerts negative impacts on the environment and potentially contributes to the development of bacterial resistance. This drawback of leachable compounds led to the shift of interest towards a more sustainable and environmentally friendly approach: contact-killing surfaces. Biocides that can be bound onto surfaces to give the substrates contact-active antibacterial activity include quaternary ammonium compounds (QACs), quaternary phosphoniums (QPs), carbon nanotubes, antibacterial peptides, and N-chloramines. Among the above, QACs and N-chloramines are the most researched contact-active biocides. We review the engineering of contact-active surfaces using QACs or N-chloramines, the modes of actions as well as the test methods. The charge-density threshold of cationic surfaces for desired antibacterial efficacy and attempts to combine various biocides for the generation of new contact-active surfaces are discussed in detail. Surface positive charge density is identified as a key parameter to define antibacterial efficacy. We expect that this research field will continue to attract more research interest in view of the potential impact of self-disinfective surfaces on healthcare-associated infections, food safety and corrosion/fouling resistance required on industrial surfaces such as oil pipes and ship hulls.

Siloxanes in silicone products intended for food contact

DEFF Research Database (Denmark)

Cederberg, Tommy Licht; Jensen, Lisbeth Krüger

oligomers which might migrate to the food when the product is being used. DTU has proposed two action limits for low molecular weight siloxanes in food contact materials. For the sum of cyclic siloxanes D3 to D8 the limits are 12 mg/kg food for adults and 2 mg/kg food for children. For the sum of cyclic...... siloxanes D3 to D13 and linear siloxanes L3-L13 the limit is 60 mg/kg food. In 49 samples of silicone products intended for food contact from the Norwegian markets content of siloxanes has been measured. Coated paper for baking constituted 8 of the samples and in none of those samples siloxanes were found......Silicone is used in food contact materials due to its excellent physical and chemical properties. It is thermostable and flexible and is used in bakeware and kitchen utensils. Silicone is also used to coat paper to make it water and fat resistant. There is no specific regulation in EU which covers...

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

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Liang Song

2018-03-01

Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

Development of a Subject-Specific Foot-Ground Contact Model for Walking.

Science.gov (United States)

Jackson, Jennifer N; Hass, Chris J; Fregly, Benjamin J

2016-09-01

largest errors in AP CoP occurred at the beginning and end of stance phase when the vertical ground reaction force (vGRF) was small. Subject-specific deformable foot-ground contact models created using this approach should enable changes in foot-ground contact pattern to be predicted accurately by gait optimization studies, which may lead to improvements in personalized rehabilitation medicine.

Contact allergy to the 26 specific fragrance ingredients to be declared on cosmetic products in accordance with the EU cosmetics directive

DEFF Research Database (Denmark)

Heisterberg, Maria V; Menné, Torkil; Johansen, Jeanne D

2011-01-01

Background. Fragrance ingredients are a frequent cause of allergic contact dermatitis. The EU Cosmetics Directive states that 26 specific fragrance ingredients, known to cause allergic contact dermatitis, must be declared on the ingredient lists of cosmetic products. Objectives. To investigate...

Specific airway resistance in healthy young Vietnamese and Caucasian adults.

Science.gov (United States)

Le Tuan, Thanh; Nguyen, Ngoc Minh; Demoulin, Bruno; Bonabel, Claude; Nguyen-Thi, Phi Linh; Ioan, Iulia; Schweitzer, Cyril; Nguyen, H T T; Varechova, Silvia; Marchal, Francois

2015-06-01

In healthy Vietnamese children the respiratory resistance has been suggested to be similar at 110 cm height but larger at 130 cm when compared with data in Caucasians from the literature, suggesting smaller airways in older Vietnamese children (Vu et al., 2008). The hypothesis tested here is whether the difference in airway resistance remains consistent throughout growth, and if it is larger in adult Vietnamese than in Caucasians. Airway resistance and Functional Residual Capacity were measured in healthy young Caucasian and Vietnamese adults in their respective native country using identical equipment and protocols. Ninety five subjects in Vietnam (60 males) and 101 in France (41 males) were recruited. Airway resistance was significantly larger in Vietnamese than in Caucasians and in females than in males, consistent with difference in body dimensions. Specific airway resistance however was not different by ethnicity or gender. The findings do not support the hypothesis that airway size at adult age - once normalized for lung volume - differs between Vietnamese and Caucasians. Copyright © 2015 Elsevier B.V. All rights reserved.

Multiple Avirulence Loci and Allele-Specific Effector Recognition Control the Pm3 Race-Specific Resistance of Wheat to Powdery Mildew[OPEN

Science.gov (United States)

Roffler, Stefan; Stirnweis, Daniel; Treier, Georges; Herren, Gerhard; Korol, Abraham B.; Wicker, Thomas

2015-01-01

In cereals, several mildew resistance genes occur as large allelic series; for example, in wheat (Triticum aestivum and Triticum turgidum), 17 functional Pm3 alleles confer agronomically important race-specific resistance to powdery mildew (Blumeria graminis). The molecular basis of race specificity has been characterized in wheat, but little is known about the corresponding avirulence genes in powdery mildew. Here, we dissected the genetics of avirulence for six Pm3 alleles and found that three major Avr loci affect avirulence, with a common locus_1 involved in all AvrPm3-Pm3 interactions. We cloned the effector gene AvrPm3a2/f2 from locus_2, which is recognized by the Pm3a and Pm3f alleles. Induction of a Pm3 allele-dependent hypersensitive response in transient assays in Nicotiana benthamiana and in wheat demonstrated specificity. Gene expression analysis of Bcg1 (encoded by locus_1) and AvrPm3 a2/f2 revealed significant differences between isolates, indicating that in addition to protein polymorphisms, expression levels play a role in avirulence. We propose a model for race specificity involving three components: an allele-specific avirulence effector, a resistance gene allele, and a pathogen-encoded suppressor of avirulence. Thus, whereas a genetically simple allelic series controls specificity in the plant host, recognition on the pathogen side is more complex, allowing flexible evolutionary responses and adaptation to resistance genes. PMID:26452600

Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Leistiko, Otto

1998-01-01

We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

Specification for corrosion-resisting chromium and chromium-nickel steel covered welding electrodes

International Nuclear Information System (INIS)

Anon.

1983-01-01

This specification prescribes requirements for covered corrosion-resisting chromium and chromium-nickel steel electrodes. These electrodes normally are used for shielded metal arc welding, and include those alloy steels designated as corrosion or heat-resisting chromium-nickel steels in which chromium exceeds 4.0 percent and nickel does not exceed 50.0 percent

Specification for corrosion-resisting chromium and chromium-nickel steel covered welding electrodes

International Nuclear Information System (INIS)

Anon.

1981-01-01

This specification prescribes requirements for covered corrosion-resisting chromium and chromium-nickel steel electrodes. These electrodes are normally used for shielded metal arc welding, and include those alloy steels designated as corrosion or heat-resisting chromium and chromium-nickel steels, in which chromium exceeds 4.0% and nickel does not exceed 50.0%

The role of titanium aluminide in n-gallium nitride ohmic contact technology

Science.gov (United States)

Pelto, Christopher M.

Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

Thermal conductivity of a graphite bipolar plate (BPP) and its thermal contact resistance with fuel cell gas diffusion layers: Effect of compression, PTFE, micro porous layer (MPL), BPP out-of-flatness and cyclic load

Science.gov (United States)

Sadeghifar, Hamidreza; Djilali, Ned; Bahrami, Majid

2015-01-01

This paper reports on measurements of thermal conductivity of a graphite bipolar plate (BPP) as a function of temperature and its thermal contact resistance (TCR) with treated and untreated gas diffusion layers (GDLs). The thermal conductivity of the BPP decreases with temperature and its thermal contact resistance with GDLs, which has been overlooked in the literature, is found to be dominant over a relatively wide range of compression. The effects of PTFE loading, micro porous layer (MPL), compression, and BPP out-of-flatness are also investigated experimentally. It is found that high PTFE loadings, MPL and even small BPP out-of-flatness increase the BPP-GDL thermal contact resistance dramatically. The paper also presents the effect of cyclic load on the total resistance of a GDL-BPP assembly, which sheds light on the behavior of these materials under operating conditions in polymer electrolyte membrane fuel cells.

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact.

Science.gov (United States)

Ling, Haifeng; Yi, Mingdong; Nagai, Masaru; Xie, Linghai; Wang, Laiyuan; Hu, Bo; Huang, Wei

2017-09-01

Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Specification for corrosion-resisting chromium and chromium-nickel steel covered welding electrodes

International Nuclear Information System (INIS)

Anon.

1981-01-01

This specification prescribes requirements for covered corrosion-resisting chromium and chromium-nickel steel electrodes. These electrodes are normally used for shielded metal arc welding, and include those alloy steels designated as corrosion or heat-resisting chromium and chromium-nickel steels, in which chromium exceeds 4.0 percent and nickel does not exceed 50.0 percent

Specific Cell Targeting Therapy Bypasses Drug Resistance Mechanisms in African Trypanosomiasis.

Directory of Open Access Journals (Sweden)

Juan D Unciti-Broceta

2015-06-01

Full Text Available African trypanosomiasis is a deadly neglected disease caused by the extracellular parasite Trypanosoma brucei. Current therapies are characterized by high drug toxicity and increasing drug resistance mainly associated with loss-of-function mutations in the transporters involved in drug import. The introduction of new antiparasitic drugs into therapeutic use is a slow and expensive process. In contrast, specific targeting of existing drugs could represent a more rapid and cost-effective approach for neglected disease treatment, impacting through reduced systemic toxicity and circumventing resistance acquired through impaired compound uptake. We have generated nanoparticles of chitosan loaded with the trypanocidal drug pentamidine and coated by a single domain nanobody that specifically targets the surface of African trypanosomes. Once loaded into this nanocarrier, pentamidine enters trypanosomes through endocytosis instead of via classical cell surface transporters. The curative dose of pentamidine-loaded nanobody-chitosan nanoparticles was 100-fold lower than pentamidine alone in a murine model of acute African trypanosomiasis. Crucially, this new formulation displayed undiminished in vitro and in vivo activity against a trypanosome cell line resistant to pentamidine as a result of mutations in the surface transporter aquaglyceroporin 2. We conclude that this new drug delivery system increases drug efficacy and has the ability to overcome resistance to some anti-protozoal drugs.

Contextualizing Intergroup Contact: Do Political Party Cues Enhance Contact Effects?

DEFF Research Database (Denmark)

Sønderskov, Kim Mannemar; Thomsen, Jens Peter Frølund

2015-01-01

This article examines intergroup contact effects in different political contexts. We expand on previous efforts of social psychologists by incorporating the messages of political parties as a contextual trigger of group membership awareness in contact situations. We argue that the focus among...... political parties on us-them categorizations heightens the awareness of group memberships. This focus in turn enhances the positive intergroup contact effect by stimulating majority members to perceive contacted persons as prototypical outgroup members. A multilevel analysis of 22 countries and almost 37......,000 individuals confirms that the ability of intergroup contact to reduce antiforeigner sentiment increases when political parties focus intensively on immigration issues and cultural differences. Specifically, both workplace contact and interethnic friendship become more effective in reducing antiforeigner...

Evaluation of Tire/Surfacing/Base Contact Stresses and Texture Depth

Directory of Open Access Journals (Sweden)

W.J.vdM. Steyn

2015-03-01

Full Text Available Tire rolling resistance has a major impact on vehicle fuel consumption. Rolling resistance is the loss of energy due to the interaction between the tire and the pavement surface. This interaction is a complicated combination of stresses and strains which depend on both tire and pavement related factors. These include vehicle speed, vehicle weight, tire material and type, road camber, tire inflation pressure, pavement surfacing texture etc. In this paper the relationship between pavement surface texture depth and tire/surfacing contact stress and area is investigated. Texture depth and tire/surfacing contact stress were measured for a range of tire inflation pressures on five different pavement surfaces. In the analysis the relationship between texture and the generated contact stresses as well as the contact stress between the surfacing and base layer are presented and discussed, and the anticipated effect of these relationships on the rolling resistance of vehicles on the surfacings, and subsequent vehicle fuel economy discussed.

Immune responses to the Mycobacterium tuberculosis-specific antigen ESAT-6 signal subclinical infection among contacts of tuberculosis patients

DEFF Research Database (Denmark)

Doherty, T Mark; Demissie, Abebech; Olobo, Joseph

2002-01-01

Diagnosis of latent Mycobacterium tuberculosis infection is considered essential for tuberculosis control but is hampered by the lack of specific reagents. We report that strong recognition of tuberculosis complex-specific antigen ESAT-6 by healthy household contacts of tuberculosis patients...... correlates with the subsequent development of active tuberculosis during a 2-year follow-up period....

A novel Capsicum gene inhibits host-specific disease resistance to Phytophthora capsici.

Science.gov (United States)

Reeves, Gregory; Monroy-Barbosa, Ariadna; Bosland, Paul W

2013-05-01

A novel disease resistance inhibitor gene (inhibitor of P. capsici resistance [Ipcr]), found in the chile pepper (Capsicum annuum) variety 'New Mexico Capsicum Accession 10399' (NMCA10399), inhibits resistance to Phytophthora capsici but not to other species of Phytophthora. When a highly P. capsici-resistant variety was hybridized with NMCA10399, the resultant F1 populations, when screened, were completely susceptible to P. capsici for root rot and foliar blight disease syndromes, despite the dominance inheritance of P. capsici resistance in chile pepper. The F2 population displayed a 3:13 resistant-to-susceptible (R:S) ratio. The testcross population displayed a 1:1 R:S ratio, and a backcross population to NMCA10399 displayed complete susceptibility. These results demonstrate the presence of a single dominant inhibitor gene affecting P. capsici resistance in chile pepper. Moreover, when lines carrying the Ipcr gene were challenged against six Phytophthora spp., the nonhost resistance was not overcome. Therefore, the Ipcr gene is interfering with host-specific resistance but not the pathogen- or microbe-associated molecular pattern nonhost responses.

Screening and contact precautions – A survey on infection control measures for multidrug-resistant bacteria in German university hospitals

Directory of Open Access Journals (Sweden)

Lena M. Biehl

2017-04-01

Full Text Available Abstract To assess the scope of infection control measures for multidrug-resistant bacteria in high-risk settings, a survey among university hospitals was conducted. Fourteen professionals from 8 sites participated. Reported policies varied largely with respect to the types of wards conducting screening, sample types used for screening and implementation of contact precautions. This variability among sites highlights the need for an evidence-based consensus of current infection control policies.

Reduced contact resistance of a-IGZO thin film transistors with inkjet-printed silver electrodes

Science.gov (United States)

Chen, Jianqiu; Ning, Honglong; Fang, Zhiqiang; Tao, Ruiqiang; Yang, Caigui; Zhou, Yicong; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao

2018-04-01

In this study, high performance amorphous In–Ga–Zn–O (a-IGZO) TFTs were successfully fabricated with inkjet-printed silver source-drain electrodes. The results showed that increased channel thickness has an improving trend in the properties of TFTs due to the decreased contact resistance. Compared with sputtered silver TFTs, devices with printed silver electrodes were more sensitive to the thickness of active layer. Furthermore, the devices with optimized active layer showed high performances with a maximum saturation mobility of 8.73 cm2 · V‑1 · S‑1 and an average saturation mobility of 6.97 cm2 · V‑1 · S‑1, I on/I off ratio more than 107 and subthreshold swing of 0.28 V/decade, which were comparable with the analogous devices with sputtered electrodes.

All-graphene edge contacts

DEFF Research Database (Denmark)

Jacobsen, Kåre Wedel; Falkenberg, Jesper Toft; Papior, Nick Rübner

2016-01-01

Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures as a func......Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures...... to be in therange of 1-10 kΩμm which is comparable to the best contact resistance reportedfor edge-contacted graphene-metal contacts. We conclude that conductingall-carbon T-junctions should be feasible....

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Science.gov (United States)

Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2018-01-01

Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

Energy Technology Data Exchange (ETDEWEB)

Li, Wei [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J., E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Liang, Yiran; Tian, Boyuan; Liang, Xuelei, E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn; Peng, Lianmao [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)

2014-03-21

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

International Nuclear Information System (INIS)

Li, Wei; Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J.; Liang, Yiran; Tian, Boyuan; Liang, Xuelei; Peng, Lianmao

2014-01-01

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected

The importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts

International Nuclear Information System (INIS)

Aydin, M.E.; Akkilic, K.; Kilicoglu, T.

2004-01-01

We have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the importance of the fact that the neutral region resistance value is considered in calculating the interface state density distribution from the nonideal forward bias current-voltage (I-V) characteristics. The diodes with the native oxide layer (metal-insulating layer-semiconductor (MIS)) showed nonideal I-V behavior with an ideality factor value of 1.310 and the barrier height value of 0.746eV. An ideality factor value of 1.065 and a barrier height value of 0.743eV were obtained for the diodes without the native oxide layer (MS). At the same energy position near the top of the valance band, the calculated interface states density (Nss) values, obtained without taking into account the series resistance of the devices (i.e. without subtracting the voltage drop across the series resistance from the applied voltage values V) is almost one order of magnitude larger than Nss values obtained by taking into account the series resistance

On the non-proportionality between wheel/rail contact forces and speed during wheelset passage over specific welds

Science.gov (United States)

Correa, Nekane; Vadillo, Ernesto G.; Santamaria, Javier; Blanco-Lorenzo, Julio

2018-01-01

This study investigates the influence on the wheel-rail contact forces of the running speed and the shape and position of weld defects along the track. For this purpose, a vertical dynamic model in the space domain is used. The model is obtained from the transformation between the domains of frequency and space using a Rational Fraction Polynomials (RFP) method, which is modified with multiobjective genetic algorithms in order to improve the fitting of track receptance and to assist integration during simulations. This produces a precise model with short calculation times, which is essential to this study. The wheel-rail contact is modelled using a non-linear Hertz spring. The contact forces are studied for several types of characteristic welds. The way in which forces vary as a function of weld position and running speed is studied for each type of weld. This paper studies some of the factors that affect the maximum forces when the vehicle moves over a rail weld, such as weld geometry, parametric excitation and contact stiffness. It is found that the maximum force in the wheel-rail contact when the vehicle moves over a weld is not always proportional to the running speed. The paper explains why it is not proportional in specific welds.

Contact networks structured by sex underpin sex-specific epidemiology of infection.

Science.gov (United States)

Silk, Matthew J; Weber, Nicola L; Steward, Lucy C; Hodgson, David J; Boots, Mike; Croft, Darren P; Delahay, Richard J; McDonald, Robbie A

2018-02-01

Contact networks are fundamental to the transmission of infection and host sex often affects the acquisition and progression of infection. However, the epidemiological impacts of sex-related variation in animal contact networks have rarely been investigated. We test the hypothesis that sex-biases in infection are related to variation in multilayer contact networks structured by sex in a population of European badgers Meles meles naturally infected with Mycobacterium bovis. Our key results are that male-male and between-sex networks are structured at broader spatial scales than female-female networks and that in male-male and between-sex contact networks, but not female-female networks, there is a significant relationship between infection and contacts with individuals in other groups. These sex differences in social behaviour may underpin male-biased acquisition of infection and may result in males being responsible for more between-group transmission. This highlights the importance of sex-related variation in host behaviour when managing animal diseases. © 2017 The Authors. Ecology Letters published by CNRS and John Wiley & Sons Ltd.

The effects of varying resistance-training loads on intermediate- and high-velocity-specific adaptations.

Science.gov (United States)

Jones, K; Bishop, P; Hunter, G; Fleisig, G

2001-08-01

The purpose of this study was to compare changes in velocity-specific adaptations in moderately resistance-trained athletes who trained with either low or high resistances. The study used tests of sport-specific skills across an intermediate- to high-velocity spectrum. Thirty NCAA Division I baseball players were randomly assigned to either a low-resistance (40-60% 1 repetition maximum [1RM]) training group or a high-resistance (70-90% 1RM) training group. Both of the training groups intended to maximallv accelerate each repetition during the concentric phase (IMCA). The 10 weeks of training consisted of 4 training sessions a week using basic core exercises. Peak force, velocity, and power were evaluated during set angle and depth jumps as well as weighted jumps using 30 and 50% 1RM. Squat 1RMs were also tested. Although no interactions for any of the jump tests were found, trends supported the hypothesis of velocity-specific training. Percentage gains suggest that the combined use of heavier training loads (70-90% 1RM) and IMCA tend to increase peak force in the lower-body leg and hip extensors. Trends also show that the combined use of lighter training loads (40-60% 1RM) and IMCA tend to increase peak power and peak velocity in the lower-body leg and hip extensors. The high-resistance group improved squats more than the low-resistance group (p training loads and IMCA to increase 1RM strength in the lower bodies of resistance-trained athletes.

Evaluating performance-based test and specifications for sulfate resistance in concrete

Science.gov (United States)

2000-12-01

This research project involved an experimental evaluation of the sulfate resistance of various concretes and mortars for the purpose of establishing performance-based specifications for the durability of concrete against sulfate attack. The research ...

Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors

Directory of Open Access Journals (Sweden)

Xinge Yu

2012-06-01

Full Text Available Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance.

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

International Nuclear Information System (INIS)

Gu, Wen; Wu, Xingyang; Song, Peng; Zhang, Jianhua

2015-01-01

Highlights: • The electrical properties of GZO/CuS x contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using Cu x S interlayers under different annealing temperatures. It is shown that the GZO/Cu x S contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10 −2 Ω cm 2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/Cu x S/p-GaN and Cu x S/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance

Current knowledge on biomarkers for contact sensitization and allergic contact dermatitis

DEFF Research Database (Denmark)

Koppes, Sjors A.; Engebretsen, Kristiane A.; Agner, Tove

2017-01-01

Contact sensitization is common and affects up to 20% of the general population. The clinical manifestation of contact sensitization is allergic contact dermatitis. This is a clinical expression that is sometimes difficult to distinguish from other types of dermatitis, for example irritant...... and atopic dermatitis. Several studies have examined the pathogenesis and severity of allergic contact dermatitis by measuring the absence or presence of various biomarkers. In this review, we provide a non-systematic overview of biomarkers that have been studied in allergic contact dermatitis. These include...... genetic variations and mutations, inflammatory mediators, alarmins, proteases, immunoproteomics, lipids, natural moisturizing factors, tight junctions, and antimicrobial peptides. We conclude that, despite the enormous amount of data, convincing specific biomarkers for allergic contact dermatitis are yet...

Palladium silicide - a new contact for semiconductor radiation detectors

International Nuclear Information System (INIS)

Totterdell, D.H.J.

1981-11-01

Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

Characterization of Deposited Platinum Contacts onto Discrete Graphene Flakes for Electrical Devices

KAUST Repository

Holguin Lerma, Jorge A.

2016-05-03

For years, electron beam induced deposition has been used to fabricate electrical contacts for micro and nanostructures. The role of the contact resistance is key to achieve high performance and efficiency in electrical devices. The present thesis reports on the electrical, structural and chemical characterization of electron beam deposited platinum electrodes that are exposed to different steps of thermal annealing and how they are used in four-probe devices of ultrathin graphite (uG) flakes (<100nm thickness). The device integration of liquid phase exfoliated uG is demonstrated, and its performance compared to devices made with analogous mechanically exfoliated uG. For both devices, similar contact resistances of ~2kΩ were obtained. The electrical measurements confirm a 99.5% reduction in contact resistance after vacuum thermal annealing at 300 °C. Parallel to this, Raman characterization confirms the formation of a nanocrystalline carbon structure over the electrode. While this could suggest an enhancement of the electrical transport in the device, an additional thermal annealing step in air at 300 °C, promoted the oxidation and removal of the carbon shell and confirmed that the contact resistance remained the same. Overall this shows that the carbon shell along the electrode has no significant role in the contact resistance. Finally, the challenges based on topographical analysis of the deposited electrodes are discussed. Reduction of the electrode’s height down to one-third of the initial value, increased surface roughness, formation of voids along the electrodes and the onset of platinum nanoparticles near the area of deposition, represent a challenge for future work.

A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

International Nuclear Information System (INIS)

Basu, A; Adams, G G; McGruer, N E

2016-01-01

Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

[Sport injuries in full contact and semi-contact karate].

Science.gov (United States)

Greier, K; Riechelmann, H; Ziemska, J

2014-03-01

Karate enjoys great popularity both in professional and recreational sports and can be classified into full, half and low contact styles. The aim of this study was the analysis of sports injuries in Kyokushinkai (full contact) and traditional Karate (semi-contact). In a retrospective study design, 215 active amateur karateka (114 full contact, 101 semi-contact) were interviewed by means of a standardised questionnaire regarding typical sport injuries during the last 36 months. Injuries were categorised into severity grade I (not requiring medical treatment), grade II (single medical treatment), grade III (several outpatient medical treatments) and grade IV (requiring hospitalisation). In total, 217 injuries were reported in detail. 125 injuries (58%) occurred in full contact and 92 (42%) in semi-contact karate. The time related injury rate of full contact karateka was 1.9/1000 h compared to 1.3/1000 h of semi-contact karateka (p injuries were musculoskeletal contusions (33% full contact, 20% semi-contact), followed by articular sprains with 19% and 16%. The lower extremity was affected twice as often in full contact (40%) as in semi-contact (20%) karate. Training injuries were reported by 80% of the full contact and 77% of the semi-contact karateka. Most injuries, both in training and competition, occurred in kumite. 75% of the reported injuries of full contact and 70% of semi-contact karateka were classified as low grade (I or II). The high rate of injuries during training and kumite (sparring) points to specific prevention goals. The emphasis should be put on proprioceptive training and consistent warm-up. In the actual competition the referees play a vital role regarding prevention. © Georg Thieme Verlag KG Stuttgart · New York.

Understanding channel and contact effects on transport in 1-dimensional nanotransistors.

Energy Technology Data Exchange (ETDEWEB)

Swartzentruber, Brian S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Delker, Collin James [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Yoo, Jinkyoung [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Janes, David B. [Purdue Univ., West Lafayette, IN (United States)

2015-02-01

Nanowire transistors are generally formed by metal contacts to a uniformly doped nanowire. The transistor can be modeled as a series combination of resistances from both the channel and the contacts. In this study, a simple model is proposed consisting of a resistive channel in series with two Schottky metal-semiconductor contacts modeled using the WKB approximation. This model captures several phenomena commonly observed in nanowire transistor measurements, including the mobility as a function of gate potential, mobility reduction with respect to bulk mobility, and non-linearities in output characteristics. For example, the maximum measured mobility as a function of gate voltage in a nanowire transistor can be predicted based on the semiconductor bulk mobility in addition to barrier height and other properties of the contact. The model is then extended to nanowires with axial p-n junctions having an inde- pendent gate over each wire segment by splitting the channel resistance into a series component for each doping segment. Finally, the contact-channel model is applied to low-frequency noise analysis in nanowire devices, where the noise can be generated in both the channel and the contacts. Because contacts play a major, yet often neglected, role in nanowire transistor operation, they must be accounted for in order to extract meaningful parameters from I-V and noise measurements.

Projecting social contact matrices in 152 countries using contact surveys and demographic data.

Directory of Open Access Journals (Sweden)

Kiesha Prem

2017-09-01

Full Text Available Heterogeneities in contact networks have a major effect in determining whether a pathogen can become epidemic or persist at endemic levels. Epidemic models that determine which interventions can successfully prevent an outbreak need to account for social structure and mixing patterns. Contact patterns vary across age and locations (e.g. home, work, and school, and including them as predictors in transmission dynamic models of pathogens that spread socially will improve the models' realism. Data from population-based contact diaries in eight European countries from the POLYMOD study were projected to 144 other countries using a Bayesian hierarchical model that estimated the proclivity of age-and-location-specific contact patterns for the countries, using Markov chain Monte Carlo simulation. Household level data from the Demographic and Health Surveys for nine lower-income countries and socio-demographic factors from several on-line databases for 152 countries were used to quantify similarity of countries to estimate contact patterns in the home, work, school and other locations for countries for which no contact data are available, accounting for demographic structure, household structure where known, and a variety of metrics including workforce participation and school enrolment. Contacts are highly assortative with age across all countries considered, but pronounced regional differences in the age-specific contacts at home were noticeable, with more inter-generational contacts in Asian countries than in other settings. Moreover, there were variations in contact patterns by location, with work-place contacts being least assortative. These variations led to differences in the effect of social distancing measures in an age structured epidemic model. Contacts have an important role in transmission dynamic models that use contact rates to characterize the spread of contact-transmissible diseases. This study provides estimates of mixing patterns for

Projecting social contact matrices in 152 countries using contact surveys and demographic data.

Science.gov (United States)

Prem, Kiesha; Cook, Alex R; Jit, Mark

2017-09-01

Heterogeneities in contact networks have a major effect in determining whether a pathogen can become epidemic or persist at endemic levels. Epidemic models that determine which interventions can successfully prevent an outbreak need to account for social structure and mixing patterns. Contact patterns vary across age and locations (e.g. home, work, and school), and including them as predictors in transmission dynamic models of pathogens that spread socially will improve the models' realism. Data from population-based contact diaries in eight European countries from the POLYMOD study were projected to 144 other countries using a Bayesian hierarchical model that estimated the proclivity of age-and-location-specific contact patterns for the countries, using Markov chain Monte Carlo simulation. Household level data from the Demographic and Health Surveys for nine lower-income countries and socio-demographic factors from several on-line databases for 152 countries were used to quantify similarity of countries to estimate contact patterns in the home, work, school and other locations for countries for which no contact data are available, accounting for demographic structure, household structure where known, and a variety of metrics including workforce participation and school enrolment. Contacts are highly assortative with age across all countries considered, but pronounced regional differences in the age-specific contacts at home were noticeable, with more inter-generational contacts in Asian countries than in other settings. Moreover, there were variations in contact patterns by location, with work-place contacts being least assortative. These variations led to differences in the effect of social distancing measures in an age structured epidemic model. Contacts have an important role in transmission dynamic models that use contact rates to characterize the spread of contact-transmissible diseases. This study provides estimates of mixing patterns for societies for which

Investigations of metal contacts to amorphous evaporated Ge films and amorphous sputtered Si films

International Nuclear Information System (INIS)

Hafiz, M.; Mgbenu, E.; Tove, P.A.; Norde, H.; Petersson, S.

1976-02-01

Amorphous Ge or Si films have been used as ohmic contacts to high-resistivity n-silicon radiation detectors. One interesting property of this contact is that it does not inject minority carriers even when the depletion region extends up to the contact thus generating an extracting field there. The function of this contact is not yet fully explored. One part problem is the role of the metal films used as external contacts to the amorphous film. In this report the function of different contacting metals, such as Au, Al, Cr are investigated by measuring the I-V-characteristics of sandwich structures with two metals on both sides of the amorphous evaporated (Ge) and sputtered (Si) film (of typical thickness 1000 A). It was found that while the symmetric structures Au-αGe-Au and Cr-αGe-Cr were low-resistive (leading to resistivity values of approximately 10 5 Ωcm for the αGe film), Al-αGe-Al structures showed much higher resistance and were also polarity dependent. The former feature was found also for unsymmetric structures, i.e. Cr-αGe-Au, Cr-αGe-Al. (Auth.)

49 CFR 178.358 - Specification 21PF fire and shock resistant, phenolic-foam insulated, metal overpack.

Science.gov (United States)

2010-10-01

... 49 Transportation 2 2010-10-01 2010-10-01 false Specification 21PF fire and shock resistant, phenolic-foam insulated, metal overpack. 178.358 Section 178.358 Transportation Other Regulations Relating... Class 7 (Radioactive) Materials § 178.358 Specification 21PF fire and shock resistant, phenolic-foam...

Plethysmographic measurements of specific airway resistance in young children

DEFF Research Database (Denmark)

Bisgaard, Hans; Nielsen, Kim G

2005-01-01

allowed discrimination of young children with respiratory disease. Bronchial hyperresponsiveness can be determined with acceptable short-term and long-term repeatability and provides good discrimination between asthmatics and healthy young children. The effects of the major antiasthmatic therapies have......Validated methods for lung function measurements in young children are lacking. Plethysmographic measurement of specific airway resistance (sRaw) provides such a method applicable from 2 years of age. sRaw gauges airway resistance from the measurements of the pressure changes driving the airflow...... during tidal breathing. These measurements require no active cooperation and are therefore feasible in children from 2 years of age. The within-observer and between-observer variability of sRaw in young children compare favorably with alternative methods. Reference values are available for sRaw and have...

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

NARCIS (Netherlands)

Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

2002-01-01

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

Effect of different atmospheres on the electrical contact performance of electronic components under fretting wear

Science.gov (United States)

Liu, Xin-Long; Cai, Zhen-Bing; Cui, Ye; Liu, Shan-Bang; Xu, Xiao-Jun; Zhu, Min-Hao

2018-04-01

The effects of oxide etch on the surface morphology of metals for industrial application is a common cause of electrical contacts failure, and it has becomes a more severe problem with the miniaturization of modern electronic devices. This study investigated the effects of electrical contact resistance on the contactor under three different atmospheres (oxygen, air, and nitrogen) based on 99.9% copper/pogo pins contacts through fretting experiments. The results showed the minimum and stable electrical contact resistance value when shrouded in the nitrogen environment and with high friction coefficient. The rich oxygen environment promotes the formation of cuprous oxide, thereby the electrical contact resistance increases. Scanning electron microscope microscopy and electron probe microanalysis were used to analyze the morphology and distribution of elements of the wear area, respectively. The surface product between contacts was investigated by x-ray photoelectron spectroscopy analysis to explain the different electrical contact properties of the three tested samples during fretting.

Emergence of Antimicrobial-Resistant Escherichia coli of Animal Origin Spreading in Humans.

Science.gov (United States)

Skurnik, David; Clermont, Olivier; Guillard, Thomas; Launay, Adrien; Danilchanka, Olga; Pons, Stéphanie; Diancourt, Laure; Lebreton, François; Kadlec, Kristina; Roux, Damien; Jiang, Deming; Dion, Sara; Aschard, Hugues; Denamur, Maurice; Cywes-Bentley, Colette; Schwarz, Stefan; Tenaillon, Olivier; Andremont, Antoine; Picard, Bertrand; Mekalanos, John; Brisse, Sylvain; Denamur, Erick

2016-04-01

In the context of the great concern about the impact of human activities on the environment, we studied 403 commensal Escherichia coli/Escherichia clade strains isolated from several animal and human populations that have variable contacts to one another. Multilocus sequence typing (MLST) showed a decrease of diversity 1) in strains isolated from animals that had an increasing contact with humans and 2) in all strains that had increased antimicrobial resistance. A specific B1 phylogroup clonal complex (CC87, Institut Pasteur schema nomenclature) of animal origin was identified and characterized as being responsible for the increased antimicrobial resistance prevalence observed in strains from the environments with a high human-mediated antimicrobial pressure. CC87 strains have a high capacity of acquiring and disseminating resistance genes with specific metabolic and genetic determinants as demonstrated by high-throughput sequencing and phenotyping. They are good mouse gut colonizers but are not virulent. Our data confirm the predominant role of human activities in the emergence of antimicrobial resistance in the environmental bacterial strains and unveil a particular E. coli clonal complex of animal origin capable of spreading antimicrobial resistance to other members of microbial communities. © The Author(s) 2015. Published by Oxford University Press on behalf of the Society for Molecular Biology and Evolution. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Investigation of biofilm formation on contact eye lenses caused by methicillin resistant Staphylococcus aureus.

Science.gov (United States)

Khalil, M A; Sonbol, F I

2014-01-01

The objective was to investigate the biofilm-forming capacity of methicillin resistant Staphylococcus aureus (MRSA) isolated from eye lenses of infected patients. A total of 32 MRSA isolated from contact lenses of patients with ocular infections were screened for their biofilm-forming capacity using tube method (TM), Congo red agar (CRA), and microtiter plate (MtP) methods. The effect of some stress factor on the biofilm formation was studied. The biofilm-forming related genes, icaA, icaD and 10 microbial surface components that recognize adhesive matrix molecule (MSCRAMM), of the selected MRSA were also detected using polymerase chain reaction. Of 32 MRSA isolates, 34.37%, 59.37%, and 81.25% showed positive results using CRA, TM or MtP, respectively. Biofilm production was found to be reduced in the presence of ethanol or ethylenediaminetetraacetic acid and at extreme pH values. On the other hand, glucose or heparin leads to a concentration dependent increase of biofilm production by the isolates. The selected biofilm producing MRSA isolate was found to harbor the icaA, icaD and up to nine of 10 tested MSCRAMM genes, whereas the selected non biofilm producing MRSA isolate did not carry any of the tested genes. The MtP method was found to be the most effective phenotypic screening method for detection of biofilm formation by MRSA. Furthermore, the molecular approach should be taken into consideration for the rapid and correct diagnosis of virulent bacteria associated with contact eye lenses.

Contact behavior modelling and its size effect on proton exchange membrane fuel cell

Science.gov (United States)

Qiu, Diankai; Peng, Linfa; Yi, Peiyun; Lai, Xinmin; Janßen, Holger; Lehnert, Werner

2017-10-01

Contact behavior between the gas diffusion layer (GDL) and bipolar plate (BPP) is of significant importance for proton exchange membrane fuel cells. Most current studies on contact behavior utilize experiments and finite element modelling and focus on fuel cells with graphite BPPs, which lead to high costs and huge computational requirements. The objective of this work is to build a more effective analytical method for contact behavior in fuel cells and investigate the size effect resulting from configuration alteration of channel and rib (channel/rib). Firstly, a mathematical description of channel/rib geometry is outlined in accordance with the fabrication of metallic BPP. Based on the interface deformation characteristic and Winkler surface model, contact pressure between BPP and GDL is then calculated to predict contact resistance and GDL porosity as evaluative parameters of contact behavior. Then, experiments on BPP fabrication and contact resistance measurement are conducted to validate the model. The measured results demonstrate an obvious dependence on channel/rib size. Feasibility of the model used in graphite fuel cells is also discussed. Finally, size factor is proposed for evaluating the rule of size effect. Significant increase occurs in contact resistance and porosity for higher size factor, in which channel/rib width decrease.

Reduced autobiographical memory specificity relates to weak resistance to proactive interference

NARCIS (Netherlands)

Smets, Jorien; Wessel, Ineke; Raes, Filip

Background and objectives: Reduced autobiographical memory specificity (rAMS), experiencing intrusive memories, and rumination appear to be risk factors for depression and depressive relapse. The aim of the current study was to investigate whether a weak resistance to proactive interference (PI)

Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

Directory of Open Access Journals (Sweden)

M.-H. Liao

2013-09-01

Full Text Available In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10−9 Ω/cm2 by inserting 0.6-nm-ZnO between Al and InGaAs(Si: 1.5 × 1019 cm−3. The metal-insulator-semiconductor tunneling diode with 0.6-nm-ZnO exhibits nearly zero (0.03 eV barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga0.47As quantum-well metal-oxide-semiconductor field- effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10−4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω-μm.

All-Elastomer 3-Axis Contact Resistive Tactile Sensor Arrays and Micromilled Manufacturing Methods Thereof

Science.gov (United States)

Charalambides, Alexandros (Inventor); Bergbreiter, Sarah (Inventor); Penskiy, Ivan (Inventor)

2018-01-01

At least one tactile sensor includes an insulating layer and a conductive layer formed on the surface of the insulating layer. The conductive layer defines at least one group of flexible projections extending orthogonally from the surface of the insulating layer. The flexible projections include a major projection extending a distance orthogonally from the surface and at least one minor projection that is adjacent to and separate from the major projection wherein the major projection extends a distance orthogonally that is greater than the distance that the minor projection extends orthogonally. Upon a compressive force normal to, or a shear force parallel to, the surface, the major projection and the minor projection flex such that an electrical contact resistance is formed between the major projection and the minor projection. A capacitive tactile sensor is also disclosed that responds to the normal and shear forces.

Numerical investigation of flow field configuration and contact resistance for PEM fuel cell performance

Energy Technology Data Exchange (ETDEWEB)

Akbari, Mohammad Hadi; Rismanchi, Behzad [Department of Mechanical Engineering, Shiraz University, Shiraz 71348-51154 (Iran)

2008-08-15

A steady-state three-dimensional non-isothermal computational fluid dynamics (CFD) model of a proton exchange membrane fuel cell is presented. Conservation of mass, momentum, species, energy, and charge, as well as electrochemical kinetics are considered. In this model, the effect of interfacial contact resistance is also included. The numerical solution is based on a finite-volume method. In this study the effects of flow channel dimensions on the cell performance are investigated. Simulation results indicate that increasing the channel width will improve the limiting current density. However, it is observed that an optimum shoulder size of the flow channels exists for which the cell performance is the highest. Polarization curves are obtained for different operating conditions which, in general, compare favorably with the corresponding experimental data. Such a CFD model can be used as a tool in the development and optimization of PEM fuel cells. (author)

Effect of Rolling Resistance in Dem Models With Spherical Bodies

Directory of Open Access Journals (Sweden)

Dubina Radek

2016-12-01

Full Text Available The rolling resistance is an artificial moment arising on the contact of two discrete elements which mimics resistance of two grains of complex shape in contact rolling relatively to each other. The paper investigates the influence of rolling resistance on behaviour of an assembly of spherical discrete elements. Besides the resistance to rolling, the contacts between spherical particles obey the Hertzian law in normal straining and Coulomb model of friction in shear.

Current knowledge on biomarkers for contact sensitization and allergic contact dermatitis.

Science.gov (United States)

Koppes, Sjors A; Engebretsen, Kristiane A; Agner, Tove; Angelova-Fischer, Irena; Berents, Teresa; Brandner, Johanna; Brans, Richard; Clausen, Maja-Lisa; Hummler, Edith; Jakasa, Ivone; Jurakić-Tončic, Ružica; John, Swen M; Khnykin, Denis; Molin, Sonja; Holm, Jan O; Suomela, Sari; Thierse, Hermann-Josef; Kezic, Sanja; Martin, Stefan F; Thyssen, Jacob P

2017-07-01

Contact sensitization is common and affects up to 20% of the general population. The clinical manifestation of contact sensitization is allergic contact dermatitis. This is a clinical expression that is sometimes difficult to distinguish from other types of dermatitis, for example irritant and atopic dermatitis. Several studies have examined the pathogenesis and severity of allergic contact dermatitis by measuring the absence or presence of various biomarkers. In this review, we provide a non-systematic overview of biomarkers that have been studied in allergic contact dermatitis. These include genetic variations and mutations, inflammatory mediators, alarmins, proteases, immunoproteomics, lipids, natural moisturizing factors, tight junctions, and antimicrobial peptides. We conclude that, despite the enormous amount of data, convincing specific biomarkers for allergic contact dermatitis are yet to be described. © 2017 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Resistance of Acanthamoeba cysts to disinfection in multiple contact lens solutions.

Science.gov (United States)

Johnston, Stephanie P; Sriram, Rama; Qvarnstrom, Yvonne; Roy, Sharon; Verani, Jennifer; Yoder, Jonathan; Lorick, Suchita; Roberts, Jacquelin; Beach, Michael J; Visvesvara, Govinda

2009-07-01

Acanthamoebae are free-living amoebae found in the environment, including soil, freshwater, brackish water, seawater, hot tubs, and Jacuzzis. Acanthamoeba species can cause keratitis, a painful vision-threatening infection of the cornea, and fatal granulomatous encephalitis in humans. More than 20 species of Acanthamoeba belonging to morphological groups I, II, and III distributed in 15 genotypes have been described. Among these, Acanthamoeba castellanii, A. polyphaga, and A. hatchetti are frequently identified as causing Acanthamoeba keratitis (AK). Improper contact lens care and contact with nonsterile water while wearing contact lenses are known risk factors for AK. During a recent multistate outbreak, AK was found to be associated with the use of Advanced Medical Optics Complete MoisturePlus multipurpose contact lens solution, which was hypothesized to have had insufficient anti-Acanthamoeba activity. As part of the investigation of that outbreak, we compared the efficacies of 11 different contact lens solutions against cysts of A. castellanii, A. polyphaga, and A. hatchetti (the isolates of all species were genotype T4), which were isolated in 2007 from specimens obtained during the outbreak investigation. The data, generated with A. castellanii, A. polyphaga, and A. hatchetti cysts, suggest that the two contact lens solutions containing hydrogen peroxide were the only solutions that showed any disinfection ability, with 0% and 66% growth, respectively, being detected with A. castellanii and 0% and 33% growth, respectively, being detected with A. polyphaga. There was no statistically significant difference in disinfection efficacy between the 11 solutions for A. hatchetti.

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, V.; Chansin, G.

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer...... are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed...... polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three...

On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

2016-08-15

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Evidence of isolate-specificity in non-hypersensitive resistance in spring wheat (Triticum aestivum) to wheat leaf rust

NARCIS (Netherlands)

Qamar, Maqsood; Niks, R.E.

2007-01-01

Isolate-specific aspect of non-hypersensitive resistance in wheat to wheat leaf rust was studied at seedling stage in the green house. Isolate-specific response of non-hypersensitive resistance was assessed from latency period (LP) and infection frequency (IF) of two single-pustule isolates of

Numerical Modeling of Electrical Contact Conductance of Rough Bodies

Directory of Open Access Journals (Sweden)

M. V. Murashov

2015-01-01

Full Text Available Since the beginning of the 20th century to the present time, efforts have been made to develop a model of the electrical contact conductance. The development of micro- and nanotechnologies make contact conductance problem more essential. To conduct borrowing from a welldeveloped thermal contact conductance models on the basis of thermal and electrical conductivity analogy is often not possible due to a number of fundamental differences. While some 3Dmodels of rough bodies deformation have been developed in one way or another, a 3D-model of the electrical conductance through rough bodies contact is still not. A spatial model of electrical contact of rough bodies is proposed, allows one to calculate the electrical contact conductance as a function of the contact pressure. Representative elements of the bodies are parallelepipeds with deterministic roughness on the contacting surfaces. First the non-linear elastic-plastic deformation of rough surface under external pressure is solved using the finite element software ANSYS. Then the solution of electrostatic problem goes on the same finite element mesh. Aluminum AD1 is used as the material of the contacting bodies with properties that account for cold work hardening of the surface. The numerical model is built within the continuum mechanics and nanoscale effects are not taken into account. The electrical contact conductance was calculated on the basis of the concept of electrical resistance of the model as the sum of the electrical resistances of the contacting bodies and the contact itself. It was assumed that there is no air in the gap between the bodies. The dependence of the electrical contact conductance on the contact pressure is calculated as well as voltage and current density distributions in the contact bodies. It is determined that the multi-asperity contact mode, adequate to real roughness, is achieved at pressures higher than 3MPa, while results within the single contact spot are

Time-wise change in neck pain in response to rehabilitation with specific resistance training

DEFF Research Database (Denmark)

Zebis, Mette Kreutzfeldt; Andersen, Christoffer H; Sundstrup, Emil

2014-01-01

in Copenhagen, Denmark. Women with neck pain >30 mm VAS (N = 131) were included in the present analysis. The training group (N = 77) performed specific resistance training for the neck/shoulder muscles three times a week, and the control group (N = 54) received advice to stay active. Participants of both groups......Purpose To determine the time-wise effect of specific resistance training on neck pain among industrial technicians with frequent neck pain symptoms. Methods Secondary analysis of a parallel-group cluster randomized controlled trial of 20 weeks performed at two large industrial production units...

Effect of specific resistance training on forearm pain and work disability in industrial technicians: cluster randomised controlled trial

DEFF Research Database (Denmark)

Andersen, Lars Louis; Jakobsen, Markus D; Pedersen, Mogens Theisen

2012-01-01

To determine the effect of specific resistance training on forearm pain and work disability in industrial technicians.......To determine the effect of specific resistance training on forearm pain and work disability in industrial technicians....

Microstructure and wear behaviors of WC–12%Co coating deposited on ductile iron by electric contact surface strengthening

International Nuclear Information System (INIS)

Qi, Xiaoben; Zhu, Shigen; Ding, Hao; Zhu, Zhengkun; Han, Zhibing

2013-01-01

WC–12%Co powders deposited on ductile iron by electric contact strengthening were studied. This technology was based on the application of the contact resistance heating between the electrode and work piece to form a wear resistant layer on ductile iron. The microstructure, microhardness distribution, phase transformation and wear behaviors of the coating were investigated using optical microscope, scanning electron microscope, Vickers hardness (HV 0.5 ), X-ray diffraction, rolling contact wear tests. The results showed that the WC–12%Co coating by electric contact strengthening was metallurgically bonded to the ductile iron. Additionally, the effect of experimental parameters on microhardness and wear resistance of coatings were studied using orthogonal experiment. The results showed that compared with (A) electric current and (B) rotating speed, (C) contact force displays the most significant effect on microhardness and wear resistance of coatings. The coatings produced at A = 19 kA, B = 0.3 r/min and C = 700 N possessed highest microhardness of 1073 HV 0.5 and wear resistance.

Is there a relationship between hypoxia, contact resistance, and intercellular communication

International Nuclear Information System (INIS)

Dertinger, H.; Guichard, M.; Malaise, E.P.

1983-01-01

This investigation addresses the shape of radiation survival curves of cells cultures as multicell spheroids. It is shown that spheroids of cells capable of intercellular communication by gap-junctions display survival curves lacking a radioresistant fraction of hypoxic cells. Compared to the corresponding monolayers, these spheriod survival curves exhibit a uniform increase in radioresistance due to the ''contact effect''. In contrast, biphasic survival curves indicative of hypoxic cells are obtained with non-communicating spheroids, however, without indication of a contact effect. Evidence is presented that this relationship between intercellular communication, hypoxia, and contact effect may possibly also hold for survival curves of solid tumors. (orig.)

Time-temperature influence on the corrosion resistance of Ni-Cr-Nb superalloys in contact with Na2SO4-V2O5 molten mixtures

International Nuclear Information System (INIS)

Otero, E.; Pardo, A.; Hernaez, J.; Hierro, P.

1990-01-01

Corrosion rate data obtained by the polarization resistance method in nickel-base superalloys in contact with Na 2 SO 4 -V 2 O 5 molten mixtures are presented. The instrumental technique is also described. Time-temperature influence on the corrosion kinetics in the described conditions is discussed (Author)

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

Current contact device for a superconducting magnet coil

International Nuclear Information System (INIS)

Hieronymus, H.

1987-01-01

The invention concerns a current supply device for a superconducting magnet coil to be shortcircuited, with a separating device per coil end, which contains a fixed cooled contact and a moving contact connected to a power supply device and a mechanical actuating device for closing and opening the contacts. When closing the heated contact on to the cooled contact, relatively large quantities of heat can be transferred to the cooled contact and therefore to the connected superconducting coil end and can cause normal conduction there. The invention therefore provides that the mass ratio of the cooled contact to the moving contact is at least 5:1, preferably at least 10:1, and that the cooled contact part is provided, at the end away from the contact area, with means for increasing the area, for example cooling fins and is connected to the coil end has a thermal resistance between the contact area and the coil end of at least 0.2 k/W, preferably at least 0.5 k/W per 1000 A of current to be transmitted. (orig.) [de

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

NARCIS (Netherlands)

Farmanbar Gelepordsari, M.; Brocks, G.

2016-01-01

High contact resistances have blocked the progress of devices based on MX2 (M = Mo, W; X = S, Se, Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. It is shown that i) one can remove the

Access to specific social resources across different social media : divergent consequences of the time spent with new contacts

NARCIS (Netherlands)

Matzat, U.; Sadowski, B.M.

2015-01-01

Despite a large number of studies on the social impact of the Internet, little is known about the specific social resources to which social media provide access. Most studies have either examined issues surrounding the question whether or not new online contacts have been established or they have

Specific antigen serologic tests in leprosy: implications for epidemiological surveillance of leprosy cases and household contacts.

Science.gov (United States)

Carvalho, Ana Paula Mendes; Coelho, Angélica da Conceição Oliveira; Correa-Oliveira, Rodrigo; Lana, Francisco Carlos Félix

2017-09-01

There is a lack of straightforward tests for field application and known biomarkers for predicting leprosy progression in infected individuals. The aim was to analyse the response to infection by Mycobacterium leprae based on the reactivity of specific antigens: natural disaccharide linked to human serum albumin via an octyl (NDOHSA), a semisynthetic phenolic glycolipid-I (PGL-I); Leprosy Infectious Disease Research Institute Diagnostic-1 (LID-1) and natural disaccharide octyl - Leprosy Infectious Disease Research Institute Diagnostic-1 (NDOLID). The study population consisted of 130 leprosy cases diagnosed between 2010 and 2015 and 277 household contacts. An enzyme-linked immunosorbent assay (ELISA) was used to analyse the reactivity of antibodies against NDOHSA, LID-1 and NDOLID. The samples and controls were tested in duplicate, and the antibody titer was expressed as an ELISA index. Data collection was made by home visits with application of questionnaire and dermatological evaluation of all household contacts to identify signs and symptoms of leprosy. Significant differences in the median ELISA results were observed among leprosy cases in treatment, leprosy cases that had completed treatment and household contacts. Higher proportions of seropositivity were observed in leprosy cases in treatment. Seropositivity was also higher in multibacillary in relation to paucibacillary, with the difference reaching statistical significance. Lower titers were observed among cases with a longer treatment time or discharge. For household contacts, the differences according to the clinical characteristics of the leprosy index case were less pronounced than expected. Other factors, such as the endemicity of leprosy, exposure outside the residence and genetic characteristics, appeared to have a greater influence on the seropositivity. Serologic tests could be used as auxiliary tools for determining the operational classification, in addition to identifying infected individuals

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Directory of Open Access Journals (Sweden)

Wojciech Macherzynski

2016-01-01

Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

Colors and contact dermatitis.

Science.gov (United States)

Bonamonte, Domenico; Foti, Caterina; Romita, Paolo; Vestita, Michelangelo; Angelini, Gianni

2014-01-01

The diagnosis of skin diseases relies on several clinical signs, among which color is of paramount importance. In this review, we consider certain clinical presentations of both eczematous and noneczematous contact dermatitis in which color plays a peculiar role orientating toward the right diagnosis. The conditions that will be discussed include specific clinical-morphologic subtypes of eczematous contact dermatitis, primary melanocytic, and nonmelanocytic contact hyperchromia, black dermographism, contact chemical leukoderma, and others. Based on the physical, chemical, and biologic factors underlying a healthy skin color, the various skin shades drawing a disease picture are thoroughly debated, stressing their etiopathogenic origins and histopathologic aspects.

A novel design of submicron thin film point contacts

International Nuclear Information System (INIS)

Koch, H.

1986-01-01

A thin film point contact design applicable to SIS-, SNS-, and microbridge-type Josephson junctions is presented, which offers potentially advanced junction characteristics (low capacitance, low stray inductance, increased quasi-particle resistance). The design philosophy is based on the fact that a point contact results if two planes having a common symmetry axis but oriented perpendicular to each other are brought into contact with each other. For the case of thin films, instead of two-dimensional planes, the cross section of the resulting ''point''-contact is defined by the thicknesses of the two thin films. Film thicknesses can be controlled much more precisely than lateral dimensions created by lithography. Hence, submicron junction geometries can be achieved using only conventional fabrication techniques. Following this idea, Josephson weak links of the ultrashort microbridge-type have been fabricated by an all-Nb technique having a 0.3-μm X 0.2-μm cross section with a R /SUB q/ I /SUB c/ product (R /SUB q/ = quasiparticle resistance, I /SUB c/ = critical current) of more than 20 mV

Physical mechanisms related to the degradation of LPCVD tungsten contacts at elevated temperatures

International Nuclear Information System (INIS)

Shenai, K.; Lewis, N.; Smith, G.A.; McConnell, M.D.; Burrell, M.

1990-01-01

The thermal stability of LPCVD (low pressure chemical vapor deposition) tungsten contacts to n-type silicon is studied at elevated temperatures in excess of 650 degrees C. The process variants studied include silicon doping, tungsten thickness, and post tungsten deposition dielectric stress temperatures. Detailed measurements of Kelvin contact resistance were made at room temperature as well as at elevated temperatures up to 165 degrees C. The tungsten contact resistance degradation at elevated stress temperatures is correlated with worm hole formation in silicon and the formation and diffusion of tungsten silicide. Extensive analytical measurements were used to characterize the material transformation at elevated stress temperatures to understand the physical mechanisms causing contact degradation

Identification of parental line specific effects of MLF2 on resistance to coccidiosis in chickens

Science.gov (United States)

2011-01-01

Background MLF2 was the candidate gene associated with coccidiosis resistance in chickens. Although single marker analysis supported the association between MLF2 and coccidiosis resistance, causative mutation relevant to coccidiosis was not identified yet. Thus, this study suggested segregation analysis of MLF2 haplotype and the association test of the other candidate genes using improved data transformation. Results A haplotype probably originated from one parental line was found out of 4 major haplotypes of MLF2. Frequency of this haplotype was 0.2 in parental chickens and its offspring in 12 families. Allele substitution effect of the MLF2 haplotype originated from a specific line was associated with increased body weight and fecal egg count explaining coccidiosis resistance. Nevertheless Box-Cox transformation was able to improve normality; association test did not produce obvious different results compared with analysis with log transformed phenotype. Conclusion Allele substitution effect analysis and classification of MLF2 haplotype identified the segregation of haplotype associated with coccidiosis resistance. The haplotype originated from a specific parental line was associated with improving disease resistance. Estimating effect of MLF2 haplotype on coccidiosis resistance will provide useful information for selecting animals or lines for future study. PMID:21645301

A noise-resistant ADSA-PH algorithm for superhydrophobic surface’s static contact angle evaluation

OpenAIRE

Z. N. Xu

2017-01-01

The blur around the contact points significantly decreases the evaluated static contact angle for superhydrophobic surface which is clearly presented in the paper. To improve the accuracy in the evaluated static contact angle for superhydrophobic surface, an accurate static contact angle algorithm, namely ADSA-PH (axisymmetric drop shape analysis-profile and height), is proposed. It discards the extracted drop edge points close to the contact points and makes use of the residual points and th...

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

Directory of Open Access Journals (Sweden)

Chong-Chong Dai

2014-04-01

Full Text Available A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

International Nuclear Information System (INIS)

Kehagias, N; Reboud, V; Chansin, G; Zelsmann, M; Jeppesen, C; Schuster, C; Kubenz, M; Reuther, F; Gruetzner, G; Torres, C M Sotomayor

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three-dimensional patterning. Three-dimensional woodpile-like structures were successfully fabricated with this new technique

Elimination of Routine Contact Precautions for Endemic Methicillin-Resistant Staphylococcus aureus and Vancomycin-Resistant Enterococcus: A Retrospective Quasi-Experimental Study.

Science.gov (United States)

Martin, Elise M; Russell, Dana; Rubin, Zachary; Humphries, Romney; Grogan, Tristan R; Elashoff, David; Uslan, Daniel Z

2016-11-01

OBJECTIVE To evaluate the impact of discontinuation of contact precautions (CP) for methicillin-resistant Staphylococcus aureus (MRSA) and vancomycin-resistant Enterococcus (VRE) and expansion of chlorhexidine gluconate (CHG) use on the health system. DESIGN Retrospective, nonrandomized, observational, quasi-experimental study. SETTING Two California hospitals. PARTICIPANTS Inpatients. METHODS We compared hospital-wide laboratory-identified clinical culture rates (as a marker of healthcare-associated infections) 1 year before and after routine CP for endemic MRSA and VRE were discontinued and CHG bathing was expanded to all units. Culture data from patients and cost data on material utilization were collected. Nursing time spent donning personal protective equipment was assessed and quantified using time-driven activity-based costing. RESULTS Average positive culture rates before and after discontinuing CP were 0.40 and 0.32 cultures/100 admissions for MRSA (P=.09), and 0.48 and 0.40 cultures/100 admissions for VRE (P=.14). When combining isolation gown and CHG costs, the health system saved $643,776 in 1 year. Before the change, 28.5% intensive care unit and 19% medicine/surgery beds were on CP for MRSA/VRE. On the basis of average room entries and donning time, estimated nursing time spent donning personal protective equipment for MRSA/VRE before the change was 45,277 hours/year (estimated cost, $4.6 million). CONCLUSION Discontinuing routine CP for endemic MRSA and VRE did not result in increased rates of MRSA or VRE after 1 year. With cost savings on materials, decreased healthcare worker time, and no concomitant increase in possible infections, elimination of routine CP may add substantial value to inpatient care delivery. Infect Control Hosp Epidemiol 2016;1-8.

Frequency shift and hysteresis suppression in contact-mode AFM using contact stiffness modulation

Directory of Open Access Journals (Sweden)

Belhaq M.

2012-07-01

Full Text Available In this paper the frequency response shift and hysteresis suppression of contact-mode atomic force microscopy is investigated using parametric modulation of the contact stiffness. Based on the Hertzian contact theory, a lumped single degree of freedom oscillator is considered for modeling the cantilever dynamics contact-mode atomic force microscopy. We use the technique of direct partition of motion and the method of multiple scales to obtain, respectively, the slow dynamic and the corresponding slow flow of the system. As results, this study shows that the amplitude of the contact stiffness modulation has a significant effect on the frequency response. Specifically, increasing the amplitude of the stiffness modulation suppresses hysteresis, decreases the peak amplitude and produces shifts towards higher and lower frequencies.

Characterization of Deposited Platinum Contacts onto Discrete Graphene Flakes for Electrical Devices

KAUST Repository

Holguin Lerma, Jorge Alberto

2016-01-01

The electrical measurements confirm a 99.5% reduction in contact resistance after vacuum thermal annealing at 300 °C. Parallel to this, Raman characterization confirms the formation of a nanocrystalline carbon structure over the electrode. While this could suggest an enhancement of the electrical transport in the device, an additional thermal annealing step in air at 300 °C, promoted the oxidation and removal of the carbon shell and confirmed that the contact resistance remained the same. Overall this shows that the carbon shell along the electrode has no significant role in the contact resistance. Finally, the challenges based on topographical analysis of the deposited electrodes are discussed. Reduction of the electrode’s height down to one-third of the initial value, increased surface roughness, formation of voids along the electrodes and the onset of platinum nanoparticles near the area of deposition, represent a challenge for future work.

Rin4 causes hybrid necrosis and race-specific resistance in an interspecific lettuce hybrid.

Science.gov (United States)

Jeuken, Marieke J W; Zhang, Ningwen W; McHale, Leah K; Pelgrom, Koen; den Boer, Erik; Lindhout, Pim; Michelmore, Richard W; Visser, Richard G F; Niks, Rients E

2009-10-01

Some inter- and intraspecific crosses may result in reduced viability or sterility in the offspring, often due to genetic incompatibilities resulting from interactions between two or more loci. Hybrid necrosis is a postzygotic genetic incompatibility that is phenotypically manifested as necrotic lesions on the plant. We observed hybrid necrosis in interspecific lettuce (Lactuca sativa and Lactuca saligna) hybrids that correlated with resistance to downy mildew. Segregation analysis revealed a specific allelic combination at two interacting loci to be responsible. The allelic interaction had two consequences: (1) a quantitative temperature-dependent autoimmunity reaction leading to necrotic lesions, lethality, and quantitative resistance to an otherwise virulent race of Bremia lactucae; and (2) a qualitative temperature-independent race-specific resistance to an avirulent race of B. lactucae. We demonstrated by transient expression and silencing experiments that one of the two interacting genes was Rin4. In Arabidopsis thaliana, RIN4 is known to interact with multiple R gene products, and their interactions result in hypersensitive resistance to Pseudomonas syringae. Site-directed mutation studies on the necrosis-eliciting allele of Rin4 in lettuce showed that three residues were critical for hybrid necrosis.

In the eye of the beholder: eye contact increases resistance to persuasion.

Science.gov (United States)

Chen, Frances S; Minson, Julia A; Schöne, Maren; Heinrichs, Markus

2013-11-01

Popular belief holds that eye contact increases the success of persuasive communication, and prior research suggests that speakers who direct their gaze more toward their listeners are perceived as more persuasive. In contrast, we demonstrate that more eye contact between the listener and speaker during persuasive communication predicts less attitude change in the direction advocated. In Study 1, participants freely watched videos of speakers expressing various views on controversial sociopolitical issues. Greater direct gaze at the speaker's eyes was associated with less attitude change in the direction advocated by the speaker. In Study 2, we instructed participants to look at either the eyes or the mouths of speakers presenting arguments counter to participants' own attitudes. Intentionally maintaining direct eye contact led to less persuasion than did gazing at the mouth. These findings suggest that efforts at increasing eye contact may be counterproductive across a variety of persuasion contexts.

Contacting graphene in a 200 mm wafer silicon technology environment

Science.gov (United States)

Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

2018-06-01

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

Contact engineering for nano-scale CMOS

KAUST Repository

Hussain, Muhammad Mustafa

2012-09-10

High performance computation with longer battery lifetime is an essential component in our today\\'s digital electronics oriented life. To achieve these goals, field effect transistors based complementary metal oxide semiconductor play the key role. One of the critical requirements of transistor structure and fabrication is efficient contact engineering. To catch up with high performance information processing, transistors are going through continuous scaling process. However, it also imposes new challenges to integrate good contact materials in a small area. This can be counterproductive as smaller area results in higher contact resistance thus reduced performance for the transistor itself. At the same time, discovery of new one or two-dimensional materials like nanowire, nanotube, or atomic crystal structure materials, introduces new set of challenges and opportunities. In this paper, we are reviewing them in a synchronized fashion: fundamentals of contact engineering, evolution into non-planar field effect transistors, opportunities and challenges with one and two-dimensional materials and a new opportunity of contact engineering from device architecture perspective. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Contact allergy to the 26 specific fragrance ingredients to be declared on cosmetic products in accordance with the EU cosmetics directive

DEFF Research Database (Denmark)

Heisterberg, Maria V; Menné, Torkil; Johansen, Jeanne D

2011-01-01

Background. Fragrance ingredients are a frequent cause of allergic contact dermatitis. The EU Cosmetics Directive states that 26 specific fragrance ingredients, known to cause allergic contact dermatitis, must be declared on the ingredient lists of cosmetic products. Objectives. To investigate...... frequencies of sensitization to the 26 individual fragrances and evaluate their importance as screening markers of fragrance allergy. Method. This was a retrospective study based on data from the Department of Dermato-Allergology, Copenhagen University Hospital Gentofte. Eczema patients (n = 1508) were patch...

Current flow in a 3-terminal thin film contact with dissimilar materials and general geometric aspect ratios

International Nuclear Information System (INIS)

Zhang Peng; Hung, Derek M H; Lau, Y Y

2013-01-01

The current flow pattern, together with the contact resistance, is calculated analytically in a Cartesian 3-terminal thin film contact with dissimilar materials. The resistivities and the geometric dimensions in the individual contact members, as well as the terminal voltages, may assume arbitrary values. We show that the current flow patterns and the contact resistance may be conveniently decomposed into the even and odd solution. The even solution gives exclusively and totally the current flowing from the source to the gate. The odd solution gives exclusively and totally the current flowing from the source to the drain. Current crowding at the edges, and current partition in different regions are displayed. The analytic solutions are validated using a simulation code. The bounds on the variation of the contact resistance are given. This paper may be considered as the generalization of the transmission line model and the Kennedy-Murley model that were used extensively in the characterization of thin-film devices. For completeness, we include the general results for the cylindrical geometry, which are qualitatively similar to the even solution of the Cartesian geometry.

Resistance against Schistosoma mansoni induced by highly irradiated infections: studies on species specificity of immunization and attempts to transfer resistance

International Nuclear Information System (INIS)

Bickle, Q.D.; Andrews, B.J.; Doenhoff, M.J.; Ford, M.J.; Taylor, M.G.

1985-01-01

Significant levels of resistance against Schistosoma mansoni challenge were developed by mice exposed to highly irradiated (20 krad.) cercariae of the homologous species (53-67%), whereas vaccination with S. bovis, S. haematobium or S. japonicum failed to confer significant levels of resistance (-5-12%), thus confirming the specificity of the immunizing procedure. Attempts to transfer resistance to naive recipients by injection of serum and of spleen or lymph node cells from donor mice vaccinated with highly irradiated cercariae were largely unsuccessful. However, significant levels of resistance could be transferred to mice by injection of serum from rabbits exposed to irradiated cercariae. Comparable levels of resistance were conferred by injection of serum at the time of challenge (34-69%) or 5-6 days later (31-56%). In contrast, sera from rabbits injected with soluble egg antigen or homogenized cercariae failed to confer protection upon recipient mice. Sera from vaccinated mice, vaccinated rabbits and antigen-injected rabbits all caused cell adherence to skin-transformed schistosomula but neither the level of adherence nor the serum titre correlated with the ability to confer protection to mice. (author)

Determination of the Resistance of Cone-Shaped Solid Electrodes

DEFF Research Database (Denmark)

Frandsen, Henrik Lund; Hendriksen, Peter Vang; Koch, Søren

2017-01-01

during processing can be avoided. Newman's formula for current constriction in the electrolyte is then used to deduce the active contact area based on the ohmic resistance of the cell, and from this the surface specific electro-catalytic activity. However, for electrode materials with low electrical......A cone-shaped electrode pressed into an electrolyte can with advantage be utilized to characterize the electro-catalytic properties of the electrode, because it is less dependent on the electrode microstructure than e.g. thin porous composite electrodes, and reactions with the electrolyte occurring...... conductivity (like Ce1-xPrxO2-δ), the resistance of the cell is significantly influenced by the ohmic resistance of the cone electrode, wherefore it must be included. In this work the ohmic resistance of a cone is modelled analytically based on simplified geometries. The two analytical models only differ...

Prescribing prophylactic antibiotics to users of therapeutic contact lenses.

Science.gov (United States)

Colomé-Campos, J; Quevedo-Junyent, L; Godoy-Barreda, N; Martínez-Salcedo, I; Romero-Aroca, P

2013-03-01

To describe the benefits and optimum use of prophylactic antibiotics in users of therapeutic contact lenses (TCL). A microbiological study was carried out on samples from 33 patients who continuously wore TCL. The resistance to antibiotics of bacteria isolated in our health region was also reviewed. An assessment was also made on whether there were microorganisms of a higher pathogenic potential in TCL than conventional contact lenses, as reported in the literature. No bacteria were isolated from 17 (52%) of the 33 lenses studied. From the 16 (48%) remaining lenses, coagulase negative Staphylococci were isolated from 10 (62%), Propionibacterium acnes from 4 (25%), and Corynebacterium from 2 (13%). The high number of negative cultures and the presence of saprophytic bacteria indicate that prophylactic antibiotic treatment is not precise. The most frequent pathogenic bacteria found in contact lenses are strongly resistant to the current commercially available antibiotics. Copyright © 2012 Sociedad Española de Oftalmología. Published by Elsevier Espana. All rights reserved.

Race-Specific Adult-Plant Resistance in Winter Wheat to Stripe Rust and Characterization of Pathogen Virulence Patterns.

Science.gov (United States)

Milus, Eugene A; Moon, David E; Lee, Kevin D; Mason, R Esten

2015-08-01

Stripe rust, caused by Puccinia striiformis f. sp. tritici, is an important disease of wheat in the Great Plains and southeastern United States. Growing resistant cultivars is the preferred means for managing stripe rust, but new virulence in the pathogen population overcomes some of the resistance. The objectives of this study were to characterize the stripe rust resistance in contemporary soft and hard red winter wheat cultivars, to characterize the virulence of P. striiformis f. sp. tritici isolates based on the resistances found in the cultivars, and to determine wheat breeders' perceptions on the importance and methods for achieving stripe rust resistance. Seedlings of cultivars were susceptible to recent isolates, indicating they lacked effective all-stage resistance. However, adult-plants were resistant or susceptible depending on the isolate, indicating they had race-specific adult-plant resistance. Using isolates collected from 1990 to 2013, six major virulence patterns were identified on adult plants of twelve cultivars that were selected as adult-plant differentials. Race-specific adult-plant resistance appears to be the only effective type of resistance protecting wheat from stripe rust in eastern United States. Among wheat breeders, the importance of incorporating stripe rust resistance into cultivars ranged from high to low depending on the frequency of epidemics in their region, and most sources of stripe rust resistance were either unknown or already overcome by virulence in the pathogen population. Breeders with a high priority for stripe rust resistance made most of their selections based on adult-plant reactions in the field, whereas breeders with a low priority for resistance based selections on molecular markers for major all-stage resistance genes.

A Germanium Back Contact Type Thermophotovoltaic Cell

International Nuclear Information System (INIS)

Nagashima, Tomonori; Okumura, Kenichi; Yamaguchi, Masafumi

2007-01-01

A Ge back contact type photovoltaic cell has been proposed to reduce resistance loss for high current densities in thermophotovoltaic systems. The back contact structure requires less surface recombination velocities than conventional structures with front grid contacts. A SiO2/SiNx double anti-reflection coating including a high refractive index SiNx layer was studied. The SiNx layer has an enough passivation effect to obtain high efficiency. The quantum efficiency of the Ge cell was around 0.8 in the 800-1600 nm wavelength range. The conversion efficiency for infrared lights was estimated at 18% for a blackbody surface and 25% for a selective emitter by using the quantum efficiency and a simulation analysis

Ion-Induced Surface Modification of Magnetically Operated Contacts

Directory of Open Access Journals (Sweden)

Karen Arushanov

2012-02-01

Full Text Available A study has been made of permalloy (iron-nickel contacts of reed switches before and after ion-induced surface modification using atomic force and optical microscopy, Auger electron and X-ray photoelectron spectroscopy. It has been found that the formation of surface nitride layers enhances corrosion and erosion resistance of contacts. We proposed to produce such layers directly into sealed reed switches by means of pulsing glow-discharge nitrogen plasma.

Silencing Agrobacterium oncogenes in transgenic grapevine results in strain-specific crown gall resistance.

Science.gov (United States)

Galambos, A; Zok, A; Kuczmog, A; Oláh, R; Putnoky, P; Ream, W; Szegedi, E

2013-11-01

Grapevine rootstock transformed with an Agrobacterium oncogene-silencing transgene was resistant to certain Agrobacterium strains but sensitive to others. Thus, genetic diversity of Agrobacterium oncogenes may limit engineering crown gall resistance. Crown gall disease of grapevine induced by Agrobacterium vitis or Agrobacterium tumefaciens causes serious economic losses in viticulture. To establish crown gall-resistant lines, somatic proembryos of Vitis berlandieri × V. rupestris cv. 'Richter 110' rootstock were transformed with an oncogene-silencing transgene based on iaaM and ipt oncogene sequences from octopine-type, tumor-inducing (Ti) plasmid pTiA6. Twenty-one transgenic lines were selected, and their transgenic nature was confirmed by polymerase chain reaction (PCR). These lines were inoculated with two A. tumefaciens and three A. vitis strains. Eight lines showed resistance to octopine-type A. tumefaciens A348. Resistance correlated with the expression of the silencing genes. However, oncogene silencing was mostly sequence specific because these lines did not abolish tumorigenesis by A. vitis strains or nopaline-type A. tumefaciens C58.

The effect of contact precautions on healthcare worker activity in acute care hospitals.

Science.gov (United States)

Morgan, Daniel J; Pineles, Lisa; Shardell, Michelle; Graham, Margaret M; Mohammadi, Shahrzad; Forrest, Graeme N; Reisinger, Heather S; Schweizer, Marin L; Perencevich, Eli N

2013-01-01

Contact precautions are a cornerstone of infection prevention but have also been associated with less healthcare worker (HCW) contact and adverse events. We studied how contact precautions modified HCW behavior in 4 acute care facilities. Prospective cohort study. Four acute care facilities in the United States performing active surveillance for methicillin-resistant Staphylococcus aureus. Trained observers performed "secret shopper" monitoring of HCW activities during routine care, using a standardized collection tool and fixed 1-hour observation periods. A total of 7,743 HCW visits were observed over 1,989 hours. Patients on contact precautions had 36.4% fewer hourly HCW visits than patients not on contact precautions (2.78 vs 4.37 visits per hour; [Formula: see text]) as well as 17.7% less direct patient contact time with HCWs (13.98 vs 16.98 minutes per hour; [Formula: see text]). Patients on contact precautions tended to have fewer visitors (23.6% fewer; [Formula: see text]). HCWs were more likely to perform hand hygiene on exiting the room of a patient on contact precautions (63.2% vs 47.4% in rooms of patients not on contact precautions; [Formula: see text]). Contact precautions were found to be associated with activities likely to reduce transmission of resistant pathogens, such as fewer visits and better hand hygiene at exit, while exposing patients on contact precautions to less HCW contact, less visitor contact, and potentially other unintended outcomes.

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

International Nuclear Information System (INIS)

Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

2014-01-01

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-10-30

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Science.gov (United States)

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Cell-Specific Establishment of Poliovirus Resistance to an Inhibitor Targeting a Cellular Protein

Science.gov (United States)

Viktorova, Ekaterina G.; Nchoutmboube, Jules; Ford-Siltz, Lauren A.

2015-01-01

ABSTRACT It is hypothesized that targeting stable cellular factors involved in viral replication instead of virus-specific proteins may raise the barrier for development of resistant mutants, which is especially important for highly adaptable small (+)RNA viruses. However, contrary to this assumption, the accumulated evidence shows that these viruses easily generate mutants resistant to the inhibitors of cellular proteins at least in some systems. We investigated here the development of poliovirus resistance to brefeldin A (BFA), an inhibitor of the cellular protein GBF1, a guanine nucleotide exchange factor for the small cellular GTPase Arf1. We found that while resistant viruses can be easily selected in HeLa cells, they do not emerge in Vero cells, in spite that in the absence of the drug both cultures support robust virus replication. Our data show that the viral replication is much more resilient to BFA than functioning of the cellular secretory pathway, suggesting that the role of GBF1 in the viral replication is independent of its Arf activating function. We demonstrate that the level of recruitment of GBF1 to the replication complexes limits the establishment and expression of a BFA resistance phenotype in both HeLa and Vero cells. Moreover, the BFA resistance phenotype of poliovirus mutants is also cell type dependent in different cells of human origin and results in a fitness loss in the form of reduced efficiency of RNA replication in the absence of the drug. Thus, a rational approach to the development of host-targeting antivirals may overcome the superior adaptability of (+)RNA viruses. IMPORTANCE Compared to the number of viral diseases, the number of available vaccines is miniscule. For some viruses vaccine development has not been successful after multiple attempts, and for many others vaccination is not a viable option. Antiviral drugs are needed for clinical practice and public health emergencies. However, viruses are highly adaptable and can

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Science.gov (United States)

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Time domain contact model for tyre/road interaction including nonlinear contact stiffness due to small-scale roughness

Science.gov (United States)

Andersson, P. B. U.; Kropp, W.

2008-11-01

Rolling resistance, traction, wear, excitation of vibrations, and noise generation are all attributes to consider in optimisation of the interaction between automotive tyres and wearing courses of roads. The key to understand and describe the interaction is to include a wide range of length scales in the description of the contact geometry. This means including scales on the order of micrometres that have been neglected in previous tyre/road interaction models. A time domain contact model for the tyre/road interaction that includes interfacial details is presented. The contact geometry is discretised into multiple elements forming pairs of matching points. The dynamic response of the tyre is calculated by convolving the contact forces with pre-calculated Green's functions. The smaller-length scales are included by using constitutive interfacial relations, i.e. by using nonlinear contact springs, for each pair of contact elements. The method is presented for normal (out-of-plane) contact and a method for assessing the stiffness of the nonlinear springs based on detailed geometry and elastic data of the tread is suggested. The governing equations of the nonlinear contact problem are solved with the Newton-Raphson iterative scheme. Relations between force, indentation, and contact stiffness are calculated for a single tread block in contact with a road surface. The calculated results have the same character as results from measurements found in literature. Comparison to traditional contact formulations shows that the effect of the small-scale roughness is large; the contact stiffness is only up to half of the stiffness that would result if contact is made over the whole element directly to the bulk of the tread. It is concluded that the suggested contact formulation is a suitable model to include more details of the contact interface. Further, the presented result for the tread block in contact with the road is a suitable input for a global tyre/road interaction model

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

Science.gov (United States)

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Evaluation of surface characteristics under fretting of electrical contacts: Removal behaviour of hot dipped tin coating

International Nuclear Information System (INIS)

Park, Young Woo; Ramesh Bapu, G.N.K.; Lee, Kang Yong

2009-01-01

The fretting corrosion behaviour of hot dipped tin coating is investigated at low fretting cycles at ±25 μm displacement amplitude, 0.5N normal load, 3 Hz frequency, 45-50% relative humidity, and 25 ± 1 deg. C temperature. The typical characteristics of the change in contact resistance with fretting cycles are explained. The fretted surface is examined using laser scanning microscope, scanning electron microscope and energy dispersive X-ray analysis to assess the surface profile, extent of fretting damage, extent of oxidation and elemental distribution across the contact zone. The interdependence of extent of wear and oxidation increases the complexity of the fretting corrosion behaviour of tin coating. The variation of contact resistance clearly revealed the fretting of tin coating from 50 to 1200 cycles and the fretting of the substrate above 1200 cycles. The observed low and stable contact resistance region and the fluctuating resistance region at various fretting cycles are explained and substantiated with Scanning electron microscopy (SEM), laser scanning microscope (LSM) and energy dispersive analysis of X-rays (EDAX) analysis results of the fretted surface.

The study of sliding contact in railgun with metal armature

International Nuclear Information System (INIS)

Kondratenko, A.K.; Bykov, M.A.; Schastnykh, B.S.; Glinov, A.P.; Poltanov, A.E.

1997-01-01

An experimental technique for the study of the current distribution in the rails and a moving metal armature is developed. The work was carried out on a special experimental railgun with a capacitor power supply. The set of small dB/dt probes as well as wire contact probes were arranged in close vicinity of the rail and armature contact surface. For interpretation of dB/dt measurements the computation technique and program of restoration of current density distribution along the armature was developed. The size and the location of the current concentration zone in the contact area are obtained for several combinations of rail and armature materials; bronze and copper rails, Al and Ti alloy armature. A stationary armature tests with resistive stainless steel and graphite layers were also made to estimate the influence of the layer material resistivity on the current distribution

Low resistivity contact to iron-pnictide superconductors

Science.gov (United States)

Tanatar, Makariy; Prozorov, Ruslan; Ni, Ni; Bud& #x27; ko, Sergey; Canfield, Paul

2013-05-28

Method of making a low resistivity electrical connection between an electrical conductor and an iron pnictide superconductor involves connecting the electrical conductor and superconductor using a tin or tin-based material therebetween, such as using a tin or tin-based solder. The superconductor can be based on doped AFe.sub.2As.sub.2, where A can be Ca, Sr, Ba, Eu or combinations thereof for purposes of illustration only.

Specific balance training included in an endurance-resistance exercise program improves postural balance in elderly patients undergoing haemodialysis.

Science.gov (United States)

Frih, Bechir; Mkacher, Wajdi; Jaafar, Hamdi; Frih, Ameur; Ben Salah, Zohra; El May, Mezry; Hammami, Mohamed

2018-04-01

The purpose of this study was to evaluate the effects of 6 months of specific balance training included in endurance-resistance program on postural balance in haemodialysis (HD) patients. Forty-nine male patients undergoing HD were randomly assigned to an intervention group (balance training included in an endurance-resistance training, n = 26) or a control group (resistance-endurance training only, n = 23). Postural control was assessed using six clinical tests; Timed Up and Go test, Tinetti Mobility Test, Berg Balance Scale, Unipodal Stance test, Mini-Balance Evaluation Systems Test and Activities Balance Confidence scale. All balance measures increased significantly after the period of rehabilitation training in the intervention group. Only the Timed Up and Go, Berg Balance Scale, Mini-Balance Evaluation Systems Test and Activities Balance Confidence scores were improved in the control group. The ranges of change in these tests were greater in the balance training group. In HD patients, specific balance training included in a usual endurance-resistance training program improves static and dynamic balance better than endurance-resistance training only. Implications for rehabilitation Rehabilitation using exercise in haemodialysis patients improved global mobility and functional abilities. Specific balance training included in usual endurance resistance training program could lead to improved static and dynamic balance.

Low-Thermal-Resistance Baseplate Mounting

Science.gov (United States)

Perreault, W. T.

1984-01-01

Low-thermal-resistance mounting achieved by preloading baseplate to slight convexity with screws threaded through beam. As mounting bolts around edge of base-place tightened, baseplate and cold plate contact first in center, with region of intimate contact spreading outward as bolts tightened.

Contact materials for nanowire devices and nanoelectromechanical switches

KAUST Repository

Hussain, Muhammad Mustafa

2011-02-01

The impact of contact materials on the performance of nanostructured devices is expected to be signifi cant. This is especially true since size scaling can increase the contact resistance and induce many unseen phenomenon and reactions that greatly impact device performance. Nanowire and nanoelectromechanical switches are two emerging nanoelectronic devices. Nanowires provide a unique opportunity to control the property of a material at an ultra-scaled dimension, whereas a nanoelectromechanical switch presents zero power consumption in its off state, as it is physically detached from the sensor anode. In this article, we specifi cally discuss contact material issues related to nanowire devices and nanoelectromechanical switches.

Contact Lens Related Corneal Ulcer

OpenAIRE

Loh, KY; Agarwal, P

2010-01-01

A corneal ulcer caused by infection is one of the major causes of blindness worldwide. One of the recent health concerns is the increasing incidence of corneal ulcers associated with contact lens user especially if the users fail to follow specific instruction in using their contact lenses. Risk factors associated with increased risk of contact lens related corneal ulcers are: overnight wear, long duration of continuous wear, lower socio-economic classes, smoking, dry eye and poor hygiene. Th...

Three-dimensional direct laser written graphitic electrical contacts to randomly distributed components

Science.gov (United States)

Dorin, Bryce; Parkinson, Patrick; Scully, Patricia

2018-04-01

The development of cost-effective electrical packaging for randomly distributed micro/nano-scale devices is a widely recognized challenge for fabrication technologies. Three-dimensional direct laser writing (DLW) has been proposed as a solution to this challenge, and has enabled the creation of rapid and low resistance graphitic wires within commercial polyimide substrates. In this work, we utilize the DLW technique to electrically contact three fully encapsulated and randomly positioned light-emitting diodes (LEDs) in a one-step process. The resolution of the contacts is in the order of 20 μ m, with an average circuit resistance of 29 ± 18 kΩ per LED contacted. The speed and simplicity of this technique is promising to meet the needs of future microelectronics and device packaging.

Top-coatless 193nm positive-tone development immersion resist for logic application

Science.gov (United States)

Liu, Lian Cong; Yeh, Tsung Ju; Lin, Yeh-Sheng; Huang, Yu Chin; Kuo, Chien Wen; Huang, Wen Liang; Lin, Chia Hung; Yu, Chun Chi; Hsu, Ray; Wan, I.-Yuan; Lin, Jeff; Im, Kwang-Hwyi; Lim, Hae Jin; Jeon, Hyun K.; Suzuki, Yasuhiro; Xu, Cheng Bai

2015-03-01

In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.

Spin transport in ferromagnetically contacted carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Meyer, C.; Morgan, C.; Schneider, C.M. [Peter Gruenberg Institut, PGI-6, Forschungszentrum Juelich and JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany)

2011-11-15

We present magnetoresistance (MR) measurements on carbon nanotubes (CNTs) with different ferromagnetic leads. A sample with permalloy (Ni{sub 80}Fe{sub 20}) contacts shows the expected tunneling-type MR effect. Measurements on devices with CoPd contacts show a larger change of resistance with magnetic field. However, only minor loops are observed, which is explained with domain wall pinning. This is supported by magnetic force microscopy (MFM) measurements, which reveal a complicated bubble and stripe domain pattern. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electrically conductive bulk composites through a contact-connected aggregate.

Directory of Open Access Journals (Sweden)

Ahsan I Nawroj

Full Text Available This paper introduces a concept that allows the creation of low-resistance composites using a network of compliant conductive aggregate units, connected through contact, embedded within the composite. Due to the straight-forward fabrication method of the aggregate, conductive composites can be created in nearly arbitrary shapes and sizes, with a lower bound near the length scale of the conductive cell used in the aggregate. The described instantiation involves aggregate cells that are approximately spherical copper coils-of-coils within a polymeric matrix, but the concept can be implemented with a wide range of conductor elements, cell geometries, and matrix materials due to its lack of reliance on specific material chemistries. The aggregate cell network provides a conductive pathway that can have orders of magnitude lower resistance than that of the matrix material--from 10(12 ohm-cm (approx. for pure silicone rubber to as low as 1 ohm-cm for the silicone/copper composite at room temperature for the presented example. After describing the basic concept and key factors involved in its success, three methods of implementing the aggregate into a matrix are then addressed--unjammed packing, jammed packing, and pre-stressed jammed packing--with an analysis of the tradeoffs between increased stiffness and improved resistivity.

Dihydrolipoamide dehydrogenase-Lpd (Rv0462)-specific T cell recall responses are higher in healthy household contacts of TB: a novel immunodominant antigen from M. tuberculosis.

Science.gov (United States)

Devasundaram, Santhi; Raja, Alamelu

2017-07-01

The partial effectiveness against pulmonary tuberculosis (PTB), displayed by the existing tuberculosis (TB) vaccine, bacillus Calmette-Guérin (BCG), highlights the need for novel vaccines to replace or improve BCG. In TB immunology, antigen-specific cellular immune response is frequently considered indispensable. Latency-associated antigens are intriguing as targets for TB vaccine development. The mycobacterial protein, dihydrolipoamide dehydrogenase (Lpd; Rv0462), the third enzyme of the pyruvate dehydrogenase (PDH) complex, facilitates Mycobacterium tuberculosis to resist host reactive nitrogen intermediates. Multicolor flow cytometry analysis of whole-blood cultures showed higher Lpd-specific Th1 recall response (IFN-γ, TNF-α, and IL-2; P = 0.0006) and memory CD4 + and CD8 + T cells (CCR7 + CD45RA - and CCR7 - CD45RA - ) in healthy household contacts (HHC) of TB ( P < 0.0001), which is comparable with or higher than the standard antigens, ESAT-6 and CFP-10. The frequency of Lpd-specific multifunctional T cells was higher in HHC compared with PTB patients. However, there is no significant statistical correlation. Regulatory T cell (T reg ) analysis of HHCs and active TB patients demonstrated very low Lpd-specific CD4 + T regs relative to ESAT-6 and CFP-10. Our study demonstrates that the Lpd antigen induces a strong cellular immune response in healthy mycobacteria-infected individuals. In consideration of this population having demonstrated immunologic protection against active TB disease development, our data are encouraging about the possible use of Lpd as a target for further TB subunit vaccine development. © Society for Leukocyte Biology.

Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

International Nuclear Information System (INIS)

Patton, Steven T; Hu Jianjun; Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A

2008-01-01

Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core (∼10 nm diameter gold nanoparticle) with smaller metallic nanoparticles (∼2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 μA) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10 6 hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts

Inheritance of resistance to watermelon mosaic virus in the cucumber line TMG-1: tissue-specific expression and relationship to zucchini yellow mosaic virus resistance.

Science.gov (United States)

Wai, T; Grumet, R

1995-09-01

The inbred cucumber (Cucumis sativus L.) line TMG-1 is resistant to three potyviruses:zucchini yellow mosaic virus (ZYMV), watermelon mosaic virus (WMV), and the watermelon strain of papaya ringspot virus (PRSV-W). The genetics of resistance to WMV and the relationship of WMV resistance to ZYMV resistance were examined. TMG-1 was crossed with WI-2757, a susceptible inbred line. F1, F2 and backcross progeny populations were screened for resistance to WMV and/or ZYMV. Two independently assorting factors conferred resistance to WMV. One resistance was conferred by a single recessive gene from TMG-1 (wmv-2). The second resistance was conferred by an epistatic interaction between a second recessive gene from TMG-1 (wmv-3) and either a dominant gene from WI-2757 (Wmv-4) or a third recessive gene from TMG-1 (wmv-4) located 20-30 cM from wmv-3. The two resistances exhibited tissue-specific expression. Resistance conferred by wmv-2 was expressed in the cotyledons and throughout the plant. Resistance conferred by wmv-3 + Wmv-4 (or wmv-4) was expressed only in true leaves. The gene conferring resistance to ZYMV appeared to be the same as, or tightly linked to one of the WMV resistance genes, wmv-3.

Nitrile rubber and carboxylated nitrile rubber resistance to soybean biodiesel

OpenAIRE

Felipe Nunes Linhares; Cléverson Fernandes Senra Gabriel; Ana Maria Furtado de Sousa; Marcia Christina Amorim Moreira Leite; Cristina Russi Guimarães Furtado

2018-01-01

Abstract Biodiesel has been considered a suitable substitute for petroleum diesel, but their chemical composition differs greatly. For this reason, biodiesel interacts differently than petroleum diesel with various materials, including rubbers. Therefore, the resistance of some elastomers should be thoroughly evaluated, specifically those which are commonly used in automotive industry. Nitrile rubber (NBR) is widely used to produce vehicular parts that are constantly in contact with fuels. T...

Characterization of recessed Ohmic contacts to AlGaN/GaN

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2015-01-01

In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to

Contact mechanics: contact area and interfacial separation from small contact to full contact

International Nuclear Information System (INIS)

Yang, C; Persson, B N J

2008-01-01

We present a molecular dynamics study of the contact between a rigid solid with a randomly rough surface and an elastic block with a flat surface. The numerical calculations mainly focus on the contact area and the interfacial separation from small contact (low load) to full contact (high load). For a small load the contact area varies linearly with the load and the interfacial separation depends logarithmically on the load. For a high load the contact area approaches the nominal contact area (i.e. complete contact), and the interfacial separation approaches zero. The numerical results have been compared with analytical theory and experimental results. They are in good agreement with each other. The present findings may be very important for soft solids, e.g. rubber, or for very smooth surfaces, where complete contact can be reached at moderately high loads without plastic deformation of the solids

Rin4 Causes Hybrid Necrosis and Race-Specific Resistance in an Interspecific Lettuce Hybrid[W

Science.gov (United States)

Jeuken, Marieke J.W.; Zhang, Ningwen W.; McHale, Leah K.; Pelgrom, Koen; den Boer, Erik; Lindhout, Pim; Michelmore, Richard W.; Visser, Richard G.F.; Niks, Rients E.

2009-01-01

Some inter- and intraspecific crosses may result in reduced viability or sterility in the offspring, often due to genetic incompatibilities resulting from interactions between two or more loci. Hybrid necrosis is a postzygotic genetic incompatibility that is phenotypically manifested as necrotic lesions on the plant. We observed hybrid necrosis in interspecific lettuce (Lactuca sativa and Lactuca saligna) hybrids that correlated with resistance to downy mildew. Segregation analysis revealed a specific allelic combination at two interacting loci to be responsible. The allelic interaction had two consequences: (1) a quantitative temperature-dependent autoimmunity reaction leading to necrotic lesions, lethality, and quantitative resistance to an otherwise virulent race of Bremia lactucae; and (2) a qualitative temperature-independent race-specific resistance to an avirulent race of B. lactucae. We demonstrated by transient expression and silencing experiments that one of the two interacting genes was Rin4. In Arabidopsis thaliana, RIN4 is known to interact with multiple R gene products, and their interactions result in hypersensitive resistance to Pseudomonas syringae. Site-directed mutation studies on the necrosis-eliciting allele of Rin4 in lettuce showed that three residues were critical for hybrid necrosis. PMID:19855048

Identification and Genetic Diversity of Etambutol Resistant Strains of Mycobacterium Tuberculosis by Allelic-Specific PCR and Spologiotyping