WorldWideScience

Sample records for spatially inhomogeneous semiconductor

  1. Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant

    Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

  2. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, D.; Rajput, S.; Li, L.

    2017-04-01

    Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.

  3. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Li, L

    2017-01-01

    Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS 2 to fabricate Schottky junctions. These junctions exhibit rectifying current–voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions. (paper)

  4. MRI intensity inhomogeneity correction by combining intensity and spatial information

    International Nuclear Information System (INIS)

    Vovk, Uros; Pernus, Franjo; Likar, Bostjan

    2004-01-01

    We propose a novel fully automated method for retrospective correction of intensity inhomogeneity, which is an undesired phenomenon in many automatic image analysis tasks, especially if quantitative analysis is the final goal. Besides most commonly used intensity features, additional spatial image features are incorporated to improve inhomogeneity correction and to make it more dynamic, so that local intensity variations can be corrected more efficiently. The proposed method is a four-step iterative procedure in which a non-parametric inhomogeneity correction is conducted. First, the probability distribution of image intensities and corresponding second derivatives is obtained. Second, intensity correction forces, condensing the probability distribution along the intensity feature, are computed for each voxel. Third, the inhomogeneity correction field is estimated by regularization of all voxel forces, and fourth, the corresponding partial inhomogeneity correction is performed. The degree of inhomogeneity correction dynamics is determined by the size of regularization kernel. The method was qualitatively and quantitatively evaluated on simulated and real MR brain images. The obtained results show that the proposed method does not corrupt inhomogeneity-free images and successfully corrects intensity inhomogeneity artefacts even if these are more dynamic

  5. Flux and polarization signals of spatially inhomogeneous gaseous exoplanets

    NARCIS (Netherlands)

    Karalidi, T.; Stam, D.M.; Guirado, D.

    2013-01-01

    Aims. We present numerically calculated, disk-integrated, spectropolarimetric signals of starlight that is reflected by vertically and horizontally inhomogeneous gaseous exoplanets. We include various spatial features that are present on Solar System’s gaseous planets: belts and zones, cyclonic

  6. Optical coherent control in semiconductors: Fringe contrast and inhomogeneous broadening

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    in the interplay between the homogeneous and inhomogeneous broadenings are measured. Based on these experiments, a coherent control model describing the optical fringe contrast using different detection schemes, such as photoluminescence or four-wave mixing, is established. Significant spectral modulation...

  7. Collisions of Two Spatial Solitons in Inhomogeneous Nonlinear Media

    International Nuclear Information System (INIS)

    Zhong Weiping; Yi Lin; Yang Zhengping; Xie Ruihua; Milivoj, Belic; Chen Goong

    2008-01-01

    Collisions of spatial solitons occurring in the nonlinear Schroeinger equation with harmonic potential are studied, using conservation laws and the split-step Fourier method. We find an analytical solution for the separation distance between the spatial solitons in an inhomogeneous nonlinear medium when the light beam is self-trapped in the transverse dimension. In the self-focusing nonlinear media the spatial solitons can be transmitted stably, and the interaction between spatial solitons is enhanced due to the linear focusing effect (and also diminished for the linear defocusing effect). In the self-defocusing nonlinear media, in the absence of self-trapping or in the presence of linear self-defocusing, no transmission of stable spatial solitons is possible. However, in such media the linear focusing effect can be exactly compensated, and the spatial solitons can propagate through

  8. Two-step estimation for inhomogeneous spatial point processes

    DEFF Research Database (Denmark)

    Waagepetersen, Rasmus; Guan, Yongtao

    This paper is concerned with parameter estimation for inhomogeneous spatial point processes with a regression model for the intensity function and tractable second order properties (K-function). Regression parameters are estimated using a Poisson likelihood score estimating function and in a second...... step minimum contrast estimation is applied for the residual clustering parameters. Asymptotic normality of parameter estimates is established under certain mixing conditions and we exemplify how the results may be applied in ecological studies of rain forests....

  9. Spatial Inhomogeneity of Kinetic and Magnetic Dissipations in Thermal Convection

    Energy Technology Data Exchange (ETDEWEB)

    Hotta, H. [Department of Physics, Graduate School of Science, Chiba university, 1-33 Yayoi-cho, Inage-ku, Chiba, 263-8522 (Japan)

    2017-08-20

    We investigate the inhomogeneity of kinetic and magnetic dissipations in thermal convection using high-resolution calculations. In statistically steady turbulence, the injected and dissipated energies are balanced. This means that a large amount of energy is continuously converted into internal energy via dissipation. As in thermal convection, downflows are colder than upflows and the inhomogeneity of the dissipation potentially changes the convection structure. Our investigation of the inhomogeneity of the dissipation shows the following. (1) More dissipation is seen around the bottom of the calculation domain, and this tendency is promoted with the magnetic field. (2) The dissipation in the downflow is much larger than that in the upflow. The dissipation in the downflow is more than 80% of the total at maximum. This tendency is also promoted with the magnetic field. (3) Although 2D probability density functions of the kinetic and magnetic dissipations versus the vertical velocity are similar, the kinetic and magnetic dissipations are not well correlated. Our result suggests that the spatial inhomogeneity of the dissipation is significant and should be considered when modeling a small-scale strong magnetic field generated with an efficient small-scale dynamo for low-resolution calculations.

  10. Nonlocal Free Energy of a Spatially Inhomogeneous Superconductor

    International Nuclear Information System (INIS)

    Grigorishin, K.V.; Lev, B.I.

    2012-01-01

    The microscopic approach is developed for obtaining of the free energy of a superconductor based on direct calculation of the vacuum amplitude. The free energy functional of the spatially inhomogeneous superconductor in a magnetic field is obtained with help of the developed approach. The obtained functional is generalization of Ginzburg-Landau functionals for any temperature, for arbitrary spatial variations of the order parameter and for the nonlocality of a magnetic response and the order parameter. Moreover, the nonlocality of the magnetic response is the consequence of order parameter's nonlocality. The extremals of this functional are considered in the explicit form in the low- and high-temperature limit at the condition of slowness of spatial variations of the order parameter. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Two-step estimation for inhomogeneous spatial point processes

    DEFF Research Database (Denmark)

    Waagepetersen, Rasmus; Guan, Yongtao

    2009-01-01

    The paper is concerned with parameter estimation for inhomogeneous spatial point processes with a regression model for the intensity function and tractable second-order properties (K-function). Regression parameters are estimated by using a Poisson likelihood score estimating function and in the ...... and in the second step minimum contrast estimation is applied for the residual clustering parameters. Asymptotic normality of parameter estimates is established under certain mixing conditions and we exemplify how the results may be applied in ecological studies of rainforests....

  12. Super-high magnetic fields in spatially inhomogeneous plasma

    International Nuclear Information System (INIS)

    Nastoyashchiy, Anatoly F.

    2012-01-01

    The new phenomenon of a spontaneous magnetic field in spatially inhomogeneous plasma is found. The criteria for instability are determined, and both the linear and nonlinear stages of the magnetic field growth are considered; it is shown that the magnetic field can reach a considerable magnitude, namely, its pressure can be comparable with the plasma pressure. Especially large magnetic fields can arise in hot plasma with a high electron density, for example, in laser-heated plasma. In steady-state plasma, the magnetic field can be self-sustaining. The considered magnetic fields may play an important role in thermal insulation of the plasma. (author)

  13. Spatially inhomogeneous acceleration of electrons in solar flares

    Science.gov (United States)

    Stackhouse, Duncan J.; Kontar, Eduard P.

    2018-04-01

    The imaging spectroscopy capabilities of the Reuven Ramaty high energy solar spectroscopic imager (RHESSI) enable the examination of the accelerated electron distribution throughout a solar flare region. In particular, it has been revealed that the energisation of these particles takes place over a region of finite size, sometimes resolved by RHESSI observations. In this paper, we present, for the first time, a spatially distributed acceleration model and investigate the role of inhomogeneous acceleration on the observed X-ray emission properties. We have modelled transport explicitly examining scatter-free and diffusive transport within the acceleration region and compare with the analytic leaky-box solution. The results show the importance of including this spatial variation when modelling electron acceleration in solar flares. The presence of an inhomogeneous, extended acceleration region produces a spectral index that is, in most cases, different from the simple leaky-box prediction. In particular, it results in a generally softer spectral index than predicted by the leaky-box solution, for both scatter-free and diffusive transport, and thus should be taken into account when modelling stochastic acceleration in solar flares.

  14. Modeling molecular mixing in a spatially inhomogeneous turbulent flow

    Science.gov (United States)

    Meyer, Daniel W.; Deb, Rajdeep

    2012-02-01

    Simulations of spatially inhomogeneous turbulent mixing in decaying grid turbulence with a joint velocity-concentration probability density function (PDF) method were conducted. The inert mixing scenario involves three streams with different compositions. The mixing model of Meyer ["A new particle interaction mixing model for turbulent dispersion and turbulent reactive flows," Phys. Fluids 22(3), 035103 (2010)], the interaction by exchange with the mean (IEM) model and its velocity-conditional variant, i.e., the IECM model, were applied. For reference, the direct numerical simulation data provided by Sawford and de Bruyn Kops ["Direct numerical simulation and lagrangian modeling of joint scalar statistics in ternary mixing," Phys. Fluids 20(9), 095106 (2008)] was used. It was found that velocity conditioning is essential to obtain accurate concentration PDF predictions. Moreover, the model of Meyer provides significantly better results compared to the IECM model at comparable computational expense.

  15. Correlated density matrix theory of spatially inhomogeneous Bose fluids

    International Nuclear Information System (INIS)

    Gernoth, K.A.; Clark, J.W.; Ristig, M.L.

    1994-06-01

    In this paper, the variational Hartree-Jastrow theory of the ground state of spatially inhomogeneous Bose systems is extended to finite temperatures. The theory presented here is a generalization also in the sense that it extends the correlated density matrix approach, formulated previously for uniform Bose fluids, to systems with nonuniform density profiles. The method provides a framework in which the effects of thermal excitations on the spatial structure of a Bose fluid, as represented by the density profile and the two-body distribution functions, may be discussed on the basis on an ab initio microscopic description of the system. Thermal excitations make their appearance through self-consistently determined one-body and two-body potentials which enter the nonlinear, coupled Euler-Lagrange equations for the one-body density and for the pair distribution function. Since back-flow correlations are neglected, the excitations are described by a Feynman eigenvalue equation, suitably generalized to nonzero temperatures. The only external quantities entering the correlated density matrix theory elaborated here are the bare two-body interaction potential and, in actual applications, the boundary conditions to be imposed on the one-body density. 30 refs

  16. Spatial inhomogeneity in spectra and exciton dynamics in porphyrin ...

    Indian Academy of Sciences (India)

    inhomogeneity. This is elucidated by time-resolved confocal microscopy. ... dynamics of such supramolecular aggregates. Weisman ... protein scaffold and faithfully represents a biomimetic reminiscent .... increased intermolecular interactions.

  17. A sodar for profiling in a spatially inhomogeneous urban environment

    Directory of Open Access Journals (Sweden)

    Stuart Bradley

    2015-11-01

    Full Text Available The urban boundary layer, above the canopy, is still poorly understood. One of the challenges is obtaining data by sampling more than a few meters above the rooftops, given the spatial and temporal inhomogeneities in both horizontal and vertical. Sodars are generally useful tools for ground-based remote sensing of winds and turbulence, but rely on horizontal homogeneity (as do lidars in building up 3-component wind vectors from sampling three or more spatially separated volumes. The time taken for sound to travel to a typical range of 200 m and back is also a limitation. A sodar of radically different design is investigated, aimed at addressing these problems. It has a single vertical transmitted sound pulse. Doppler shifted signals are received from a number of volumes around the periphery of the transmitted beam with microphones which each having tight angular sensitivity at zenith angles slightly off-vertical. The spatial spread of sampled volumes is therefore smaller. By having more receiver microphones than a conventional sodar, the effect of smaller zenith angle is offset. More rapid profiling is also possible with a single vertical transmitted beam, instead of the usual multiple beams.A prototype design is described, together with initial field measurements. It is found that the beam forming using a single dish antenna and the drift of the sound pulse downwind both give rise to reduced performance compared with expectations. It is concluded that, while the new sodar works in principle, the compromises arising in the design mean that the expected advantages have not been realized

  18. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

    Directory of Open Access Journals (Sweden)

    Jianqiao Liu

    2017-08-01

    Full Text Available The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  19. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics.

    Science.gov (United States)

    Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

    2017-08-10

    The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  20. Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1998-01-01

    We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

  1. Attosecond extreme ultraviolet generation in cluster by using spatially inhomogeneous field

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Liqiang, E-mail: lqfeng-lngy@126.com [College of Science, Liaoning University of Technology, Jinzhou, 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics Chinese Academy of Sciences, Dalian 116023 (China); Liu, Hang [School of Chemical and Environmental Engineering, Liaoning University of Technology, Jinzhou 121000 (China)

    2015-01-15

    A promising method to generate the attosecond extreme ultraviolet (XUV) sources has been theoretically investigated emerging from the two-dimensional Ar{sup +} cluster driven by the spatially inhomogeneous field. The results show that with the introduction of the Ar{sup +} cluster model, not only the harmonic cutoffs are enhanced, but also the harmonic yields are reinforced. Furthermore, by properly moderating the inhomogeneity as well as the laser parameters of the inhomogeneous field, the harmonic cutoff can be further extended. As a result, three almost linearly polarized XUV pulses with durations of 40 as, 42 as, and 45 as can be obtained.

  2. A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

    Science.gov (United States)

    Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

    2018-03-01

    Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Measuring the self-healing of the spatially inhomogeneous states of polarization of vector Bessel beams

    CSIR Research Space (South Africa)

    Milione, G

    2015-02-01

    Full Text Available , using a spatial light modulator in concert with a liquid crystal q-plate. As a proof of principle, their intensities and spatially inhomogeneous states of polarization were experimentally measured using Stokes polarimetry as they propagated through two...

  4. A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

    International Nuclear Information System (INIS)

    Ren Min; Li Ze-Hong; Liu Xiao-Long; Xie Jia-Xiong; Deng Guang-Min; Zhang Bo

    2011-01-01

    A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R on,sp ), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its R on,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and R on,sp are investigated, and the optimized results with BV of 83 V and R on,sp of 54 mΩ·mm 2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior 'R on,sp /BV' trade-off to the conventional VDMOS (a 38% reduction of R on,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R on,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively. (interdisciplinary physics and related areas of science and technology)

  5. Lie Symmetries and Solitons in Nonlinear Systems with Spatially Inhomogeneous Nonlinearities

    International Nuclear Information System (INIS)

    Belmonte-Beitia, Juan; Perez-Garcia, Victor M.; Vekslerchik, Vadym; Torres, Pedro J.

    2007-01-01

    Using Lie group theory and canonical transformations, we construct explicit solutions of nonlinear Schroedinger equations with spatially inhomogeneous nonlinearities. We present the general theory, use it to show that localized nonlinearities can support bound states with an arbitrary number solitons, and discuss other applications of interest to the field of nonlinear matter waves

  6. Density perturbations due to the inhomogeneous discrete spatial structure of space-time

    International Nuclear Information System (INIS)

    Wolf, C.

    1998-01-01

    For the case that space-time permits an inhomogeneous discrete spatial structure due to varying gravitational fields or a foam-like structure of space-time, it is demonstrated that thermodynamic reasoning implies that matter-density perturbations will arise in the early universe

  7. Normal modes and possibility of spatially inhomogeneous phases for a 2D ferromagnet with biquadratic and magnetoelastic interactions

    International Nuclear Information System (INIS)

    Fridman, Yu.A.; Klevets, Ph.N.; Matyunin, D.A.

    2006-01-01

    Influence of the magnetodipolar interaction on the phase states of a 2D non-Heisenberg ferromagnet is investigated. It is shown that in the system considered both the homogeneous states (ferromagnetic or quadrupolar) and the spatially inhomogeneous ones can be realized. At this the spatial inhomogeneity is related with the distribution of the quadrupolar order parameters

  8. Scattering of matter waves in spatially inhomogeneous environments

    International Nuclear Information System (INIS)

    Tsitoura, F.; Krüger, P.; Kevrekidis, P. G.; Frantzeskakis, D. J.

    2015-01-01

    In this article, we study scattering of quasi-one-dimensional matter waves at an interface of two spatial domains, one with repulsive and one with attractive interatomic interactions. It is shown that the incidence of a Gaussian wave packet from the repulsive to the attractive region gives rise to generation of a soliton train. More specifically, the number of emergent solitons can be controlled, e.g., by the variation of the amplitude or the width of the incoming wave packet. Furthermore, we study the reflectivity of a soliton incident from the attractive region to the repulsive one. We find the reflection coefficient numerically and employ analytical methods, which treat the soliton as a particle (for moderate and large amplitudes) or a quasilinear wave packet (for small amplitudes), to determine the critical soliton momentum (as a function of the soliton amplitude) for which total reflection is observed

  9. A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

    Institute of Scientific and Technical Information of China (English)

    Ren Min; Li Ze-Hong; Liu Xiao-Long; Xie Jia-Xiong; Deng Guang-Min; Zhang Bo

    2011-01-01

    A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (Ron,sp),whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region,is proposed.The theoretical limit of its Ron,sp is deduced,the influence of structure parameters on the breakdown voltage (BV) and Ron,sp are investigated,and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained.Simulations show that the inhomogencous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET)has a superior “Ron,sp/BV” trade-off to the conventional VDMOS (a 38% reduction of Ron,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of Ron,sp with the same BV).The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET.Its reverse recovery peak current,reverse recovery time and reverse recovery charge are about 50,80 and 40% of those of the superjunction MOSFET,respectively.

  10. Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant; Rajput, Shivani; Li, Lian

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. In this study, graphene Schottky junctions are fabricated by transferring CVD monolayer graphene on mechanically exfoliated MoS2 multilayers. The forward bias current-voltage characteristics are measured in the temperature range of 210-300 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature. Such behavior is attributed to Schottky barrier inhomogeneities possibly due to graphene ripples and ridges at the junction interface as suggested by atomic force microscopy. Assuming a Gaussian distribution of the barrier height, mean barrier of 0.97+/-0.10 eV is found for the graphene MoS2 junction. Our findings provide significant insight on the barrier height inhomogeneities in graphene/two dimensional semiconductor Schottky junctions. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award No. DEFG02-07ER46228.

  11. High-definition, single-scan 2D MRI in inhomogeneous fields using spatial encoding methods.

    Science.gov (United States)

    Ben-Eliezer, Noam; Shrot, Yoav; Frydman, Lucio

    2010-01-01

    An approach has been recently introduced for acquiring two-dimensional (2D) nuclear magnetic resonance images in a single scan, based on the spatial encoding of the spin interactions. This article explores the potential of integrating this spatial encoding together with conventional temporal encoding principles, to produce 2D single-shot images with moderate field of views. The resulting "hybrid" imaging scheme is shown to be superior to traditional schemes in non-homogeneous magnetic field environments. An enhancement of previously discussed pulse sequences is also proposed, whereby distortions affecting the image along the spatially encoded axis are eliminated. This new variant is also characterized by a refocusing of T(2)(*) effects, leading to a restoration of high-definition images for regions which would otherwise be highly dephased and thus not visible. These single-scan 2D images are characterized by improved signal-to-noise ratios and a genuine T(2) contrast, albeit not free from inhomogeneity distortions. Simple postprocessing algorithms relying on inhomogeneity phase maps of the imaged object can successfully remove most of these residual distortions. Initial results suggest that this acquisition scheme has the potential to overcome strong field inhomogeneities acting over extended acquisition durations, exceeding 100 ms for a single-shot image.

  12. Spectrally resolved four-wave mixing in semiconductors: Influence of inhomogeneous broadening

    DEFF Research Database (Denmark)

    Erland, J.; Pantke, K.-H.; Mizeikis, V.

    1994-01-01

    We study the influence of inhomogeneous broadening on results obtained from spectrally resolved transient four-wave mixing. In particular, we study the case where more resonances are coherently excited, leading to polarization interference or quantum beats, depending on the microscopic nature of ...

  13. Bose-Einstein condensates with spatially inhomogeneous interaction and bright solitons

    International Nuclear Information System (INIS)

    Shin, H.J.; Radha, R.; Kumar, V. Ramesh

    2011-01-01

    In this Letter, we investigate the dynamics of Bose-Einstein Condensates (BECs) with spatially inhomogeneous interaction and generate bright solitons for the condensates by solving the associated mean field description governed by the Gross-Pitaevskii (GP) equation. We then investigate the properties of BECs in an optical lattice and periodic potential. We show that the GP equation in an optical lattice potential is integrable provided the interaction strength between the atoms varies periodically in space. The model discussed in the Letter offers the luxury of choosing the form of the lattice without destroying the integrability. Besides, we have also brought out the possible ramifications of the integrable model in the condensates of quasi-particles. -- Highlights: → We generate bright solitons for the collisionally inhomogeneous BECs. → We then study their properties in an optical lattice and periodic potential. → The model may have wider ramifications in the BECs of quasi-particles.

  14. Spatially resolved spectroscopy on semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Roessler, Johanna

    2009-02-20

    Cleared edge overgrowth (CEO) nanostructures are identified and studied by 1D und 2D {mu}PL mapping scans and by time-resolved and power-dependent measurements. Distinct excitonic ground states of 2fold CEO QDs with large localization energies are achieved. The deeper localization reached as compared to the only other report on 2fold CEO QDs in literature is attributed to a new strain-free fabrication process and changed QW thickness in [001] growth. In order to achieve controlled manipulation of 2fold CEO QDs the concept of a CEO structure with three top gates and one back gate is presented. Due to the complexity of this device, a simpler test structure is realized. Measurements on this test structure confirm the necessity to either grow significantly thicker overgrowth layers or to provide separate top gates in all three spatial direction to controllably manipulate 2fold CEO QDs with an external electric field. (orig.)

  15. Semiconductor nanoparticles with spatial separation of charge carriers: synthesis and optical properties

    International Nuclear Information System (INIS)

    Vasiliev, Roman B; Dirin, Dmitry N; Gaskov, Alexander M

    2011-01-01

    The results of studies on core/shell semiconductor nanoparticles with spatial separation of photoexcited charge carriers are analyzed and generalized. Peculiarities of the electronic properties of semiconductor/semiconductor heterojunctions formed inside such particles are considered. Data on the effect of spatial separation of charge carriers on the optical properties of nanoparticles including spectral shifts of the exciton bands, absorption coefficients and electron–hole pair recombination times are presented. Methods of synthesis of core/shell semiconductor nanoparticles in solutions are discussed. Specific features of the optical properties of anisotropic semiconductor nanoparticles with the semiconductor/semiconductor junctions are noted. The bibliography includes 165 references.

  16. Influence of spatial beam inhomogeneities on the parameters of a petawatt laser system based on multi-stage parametric amplification

    International Nuclear Information System (INIS)

    Frolov, S A; Trunov, V I; Pestryakov, Efim V; Leshchenko, V E

    2013-01-01

    We have developed a technique for investigating the evolution of spatial inhomogeneities in high-power laser systems based on multi-stage parametric amplification. A linearised model of the inhomogeneity development is first devised for parametric amplification with the small-scale self-focusing taken into account. It is shown that the application of this model gives the results consistent (with high accuracy and in a wide range of inhomogeneity parameters) with the calculation without approximations. Using the linearised model, we have analysed the development of spatial inhomogeneities in a petawatt laser system based on multi-stage parametric amplification, developed at the Institute of Laser Physics, Siberian Branch of the Russian Academy of Sciences (ILP SB RAS). (control of laser radiation parameters)

  17. Control of alpha particle transport by spatially inhomogeneous ion cyclotron resonance heating

    International Nuclear Information System (INIS)

    Chang, C.S.; Imre, K.; Weitzner, H.; Colestock, P.

    1990-02-01

    Control of the radial alpha particle transport by using Ion Cyclotron Range of Frequency waves is investigated in a large-aspect-ratio tokamak geometry. It is shown that spatially inhomogeneous ICRF-wave energy with properly selected frequencies and wave numbers can induce fast convective transport of alpha particles at the speed of order υ alpha ∼ (P RF /n α ε 0 ) ρ p , where P RF is the ICRF-wave power density, n α is the alpha density, ε 0 is the alpha birth energy, and ρ p is the poloidal gyroradius of alpha particles at the birth energy. Application to ITER plasmas is studied and possible antenna designs to control alpha particle flux are discussed. 8 refs., 3 figs

  18. Dissipative Vortex Solitons in Defocusing Media with Spatially Inhomogeneous Nonlinear Absorption

    Science.gov (United States)

    Lai, Xian-Jing; Cai, Xiao-Ou; Zhang, Jie-Fang

    2018-02-01

    In this paper, by solving a complex nonlinear Schrödinger equation, radially symmetric dissipative vortex solitons are obtained analytically and are tested numerically. We find that spatially inhomogeneous nonlinear absorption gives rise to the stability of dissipative vortex solitons in self-defocusing nonlinear medium in the presence of constant linear gain. Numerical simulation reveals the interaction effect among linear gain and nonlinear loss in the azimuthal modulation instabilities of these vortices suppression. Apart from the uniform linear gain indeed affects the stability of vortex in this media, another noticeable feature of current setup is that the steep spatial modulation of the nonlinear absorption can suppress sidelobes effectively and support stable vortex solitons in situations with uniform linear gain. Under appropriate conditions, the vortex solitons can propagate stably and feature no symmetry breaking, although the beams exhibit radical compression and amplification as they propagate. Supported by the National Natural Science Foundation of China under Grant No. 11705164 and the Zhejiang Provincial Natural Science Foundation of China under Grant No. LQ16A040003

  19. Estimating functions for inhomogeneous spatial point processes with incomplete covariate data

    DEFF Research Database (Denmark)

    Waagepetersen, Rasmus

    and this leads to parameter estimation error which is difficult to quantify. In this paper we introduce a Monte Carlo version of the estimating function used in "spatstat" for fitting inhomogeneous Poisson processes and certain inhomogeneous cluster processes. For this modified estimating function it is feasible...

  20. Estimating functions for inhomogeneous spatial point processes with incomplete covariate data

    DEFF Research Database (Denmark)

    Waagepetersen, Rasmus

    2008-01-01

    and this leads to parameter estimation error which is difficult to quantify. In this paper, we introduce a Monte Carlo version of the estimating function used in spatstat for fitting inhomogeneous Poisson processes and certain inhomogeneous cluster processes. For this modified estimating function, it is feasible...

  1. Effect of spatial inhomogeneities on the membrane surface on receptor dimerization and signal initiation

    Directory of Open Access Journals (Sweden)

    Romica Kerketta

    2016-08-01

    Full Text Available Important signal transduction pathways originate on the plasma membrane, where microdomains may transiently entrap diffusing receptors. This results in a non-random distribution of receptors even in the resting state, which can be visualized as clusters by high resolution imaging methods. Here, we explore how spatial in-homogeneities in the plasma membrane might influence the dimerization and phosphorylation status of ErbB2 and ErbB3, two receptor tyrosine kinases that preferentially heterodimerize and are often co-expressed in cancer. This theoretical study is based upon spatial stochastic simulations of the two-dimensional membrane landscape, where variables include differential distributions and overlap of transient confinement zones (domains for the two receptor species. The in silico model is parameterized and validated using data from single particle tracking experiments. We report key differences in signaling output based on the degree of overlap between domains and the relative retention of receptors in such domains, expressed as escape probability. Results predict that a high overlap of domains, which favors transient co-confinement of both receptor species, will enhance the rate of hetero-interactions. Where domains do not overlap, simulations confirm expectations that homo-interactions are favored. Since ErbB3 is uniquely dependent on ErbB2 interactions for activation of its catalytic activity, variations in domain overlap or escape probability markedly alter the predicted patterns and time course of ErbB3 and ErbB2 phosphorylation. Taken together, these results implicate membrane domain organization as an important modulator of signal initiation, motivating the design of novel experimental approaches to measure these important parameters across a wider range of receptor systems.

  2. Observation of the inhomogeneous spatial distribution of MeV ions accelerated by the hydrodynamic ambipolar expansion of clusters

    International Nuclear Information System (INIS)

    Kanasaki, Masato; Jinno, Satoshi; Sakaki, Hironao; Faenov, Anatoly Ya.; Pikuz, Tatiana A.; Nishiuchi, Mamiko; Kiriyama, Hiromitsu; Kando, Masaki; Sugiyama, Akira; Kondo, Kiminori; Matsui, Ryutaro; Kishimoto, Yasuaki; Morishima, Kunihiro; Watanabe, Yukinobu; Scullion, Clare; Smyth, Ashley G.; Alejo, Aaron; Doria, Domenico; Kar, Satyabrata; Borghesi, Marco

    2015-01-01

    An inhomogeneous spatial distribution of laser accelerated carbon/oxygen ions produced via the hydrodynamic ambipolar expansion of CO_2 clusters has been measured by using CR-39 detectors. An inhomogeneous etch pits spatial distribution has appeared on the etched CR-39 detector installed on the laser propagation direction, while homogeneous ones are appeared on those installed at 45° and 90° from the laser propagation direction. From the range of ions in CR-39 obtained by using the multi-step etching technique, the averaged energies of carbon/oxygen ions for all directions are determined as 0.78 ± 0.09 MeV/n. The number of ions in the laser propagation direction is about 1.5 times larger than those in other directions. The inhomogeneous etch pits spatial distribution in the laser propagation direction could originate from an ion beam collimation and modulation by the effect of electromagnetic structures created in the laser plasma. - Highlights: • A spatial distribution of ions due to hydrodynamic ambipolar expansion is measured. • The homogeneous ion energy distribution of 0.78 ± 0.09 MeV/n is measured by CR-39. • The number of ions in the laser axis is about 1.5 times larger than other directions.

  3. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  4. INHOMOGENEITY IN SPATIAL COX POINT PROCESSES – LOCATION DEPENDENT THINNING IS NOT THE ONLY OPTION

    Directory of Open Access Journals (Sweden)

    Michaela Prokešová

    2010-11-01

    Full Text Available In the literature on point processes the by far most popular option for introducing inhomogeneity into a point process model is the location dependent thinning (resulting in a second-order intensity-reweighted stationary point process. This produces a very tractable model and there are several fast estimation procedures available. Nevertheless, this model dilutes the interaction (or the geometrical structure of the original homogeneous model in a special way. When concerning the Markov point processes several alternative inhomogeneous models were suggested and investigated in the literature. But it is not so for the Cox point processes, the canonical models for clustered point patterns. In the contribution we discuss several other options how to define inhomogeneous Cox point process models that result in point patterns with different types of geometric structure. We further investigate the possible parameter estimation procedures for such models.

  5. Identification of Spatial Fault Patterns in Semiconductor Wafers

    Data.gov (United States)

    National Aeronautics and Space Administration — Abstract The semiconductor industry is constantly searching for new ways to increase the rate of both process development and yield learning. As more data is being...

  6. Potential and flux field landscape theory. II. Non-equilibrium thermodynamics of spatially inhomogeneous stochastic dynamical systems

    International Nuclear Information System (INIS)

    Wu, Wei; Wang, Jin

    2014-01-01

    We have established a general non-equilibrium thermodynamic formalism consistently applicable to both spatially homogeneous and, more importantly, spatially inhomogeneous systems, governed by the Langevin and Fokker-Planck stochastic dynamics with multiple state transition mechanisms, using the potential-flux landscape framework as a bridge connecting stochastic dynamics with non-equilibrium thermodynamics. A set of non-equilibrium thermodynamic equations, quantifying the relations of the non-equilibrium entropy, entropy flow, entropy production, and other thermodynamic quantities, together with their specific expressions, is constructed from a set of dynamical decomposition equations associated with the potential-flux landscape framework. The flux velocity plays a pivotal role on both the dynamic and thermodynamic levels. On the dynamic level, it represents a dynamic force breaking detailed balance, entailing the dynamical decomposition equations. On the thermodynamic level, it represents a thermodynamic force generating entropy production, manifested in the non-equilibrium thermodynamic equations. The Ornstein-Uhlenbeck process and more specific examples, the spatial stochastic neuronal model, in particular, are studied to test and illustrate the general theory. This theoretical framework is particularly suitable to study the non-equilibrium (thermo)dynamics of spatially inhomogeneous systems abundant in nature. This paper is the second of a series

  7. Reasons for the variability of the climate sensitivity parameter regarding spatially inhomogeneous ozone perturbation; Ursachen der Variabilitaet des Klimasensitivitaetsparameters fuer raeumlich inhomogene Ozonstoerungen

    Energy Technology Data Exchange (ETDEWEB)

    Stuber, N.

    2003-07-01

    A reduction of anthropogenic greenhouse gas emissions is a condition precedent for implementing the framework convention on climate change. ''Metrics'' allow for a comparison of different emissions with regard to their potential effects on global climate and, hence, are a prerequisite for political decisions. Currently ''radiative forcing'' is the most common metric: Global, annual mean radiative forcing resulting from some perturbation of the climate system is proportional to equilibrium surface temperature response. The coefficient of proportionality, {lambda}, is called the ''climate sensitivity parameter''. However, several studies have indicated that for spatially inhomogeneous perturbations {lambda} can no longer be regarded as a constant. This doctoral thesis examines the reasons for the non-linear relationship between radiative forcing and climate response. The response to several idealized ozone perturbations has been analysed. The equilibrium response of some radiatively relevant parameters features a characteristic signature, implying that the respective feedback mechanisms act quite differently in the various experiments. Accordingly, equality of radiative forcing is not sufficient to guarantee comparability of the gross effect of all feedback mechanisms. Analysis shows that the variability of {lambda} is largely due to the very different strength of stratospheric water vapor and sea-ice albedo feedback for the various experiments. (orig.)

  8. High-order harmonic generation driven by inhomogeneous plasmonics fields spatially bounded: influence on the cut-off law

    Science.gov (United States)

    Neyra, E.; Videla, F.; Ciappina, M. F.; Pérez-Hernández, J. A.; Roso, L.; Lewenstein, M.; Torchia, G. A.

    2018-03-01

    We study high-order harmonic generation (HHG) in model atoms driven by plasmonic-enhanced fields. These fields result from the illumination of plasmonic nanostructures by few-cycle laser pulses. We demonstrate that the spatial inhomogeneous character of the laser electric field, in a form of Gaussian-shaped functions, leads to an unexpected relationship between the HHG cutoff and the laser wavelength. Precise description of the spatial form of the plasmonic-enhanced field allows us to predict this relationship. We combine the numerical solutions of the time-dependent Schrödinger equation (TDSE) with the plasmonic-enhanced electric fields obtained from 3D finite element simulations. We additionally employ classical simulations to supplement the TDSE outcomes and characterize the extended HHG spectra by means of their associated electron trajectories. A proper definition of the spatially inhomogeneous laser electric field is instrumental to accurately describe the underlying physics of HHG driven by plasmonic-enhanced fields. This characterization opens up new perspectives for HHG control with various experimental nano-setups.

  9. Cooperation is enhanced by inhomogeneous inertia in spatial prisoner's dilemma game

    Science.gov (United States)

    Chang, Shuhua; Zhang, Zhipeng; Wu, Yu'e.; Xie, Yunya

    2018-01-01

    Inertia is an important factor that cannot be ignored in the real world for some lazy individuals in the process of decision making. In this work, we introduce a simple classification mechanism of strategy changing in evolutionary prisoner's dilemma games on different topologies. In this model, a part of players update their strategies according to not only the payoff difference, but also the inertia factor, which makes nodes heterogeneous and the system inhomogeneous. Moreover, we also study the impact of the number of neighbors on the evolution of cooperation. The results show that the evolution of cooperation will be promoted to a high level when the inertia factor and the inhomogeneous system are combined. In addition, we find that the more neighbors one player has, the higher density of cooperators is sustained in the optimal position. This work could be conducive to understanding the emergence and persistence of cooperative behavior caused by the inertia factor in reality.

  10. Spatially Mapping Energy Transfer from Single Plasmonic Particles to Semiconductor Substrates via STEM/EELS.

    Science.gov (United States)

    Li, Guoliang; Cherqui, Charles; Bigelow, Nicholas W; Duscher, Gerd; Straney, Patrick J; Millstone, Jill E; Masiello, David J; Camden, Jon P

    2015-05-13

    Energy transfer from plasmonic nanoparticles to semiconductors can expand the available spectrum of solar energy-harvesting devices. Here, we spatially and spectrally resolve the interaction between single Ag nanocubes with insulating and semiconducting substrates using electron energy-loss spectroscopy, electrodynamics simulations, and extended plasmon hybridization theory. Our results illustrate a new way to characterize plasmon-semiconductor energy transfer at the nanoscale and bear impact upon the design of next-generation solar energy-harvesting devices.

  11. Effects induced on the transverse-spatial-impulse response of an inhomogeneous photoreceptor with a nonsymmetric refractive index profile and arbitrarily located origin

    International Nuclear Information System (INIS)

    Calvo, M.L.

    1987-01-01

    In a few earlier communications, spatial-transverse-impulse response (STIR) associated with the initial field transversely distributed across the entrance pupil of an inhomogeneous optical wave guide (photo-receptor) has been investigated. In the present work, effects of indetermination in the location of the origin on an arbitrarily defined refractive index profile, representing the degree of inhomogenity at the aperture pupil of a single receptor, have been studied. Some consequences related to a few possible technical applications have been discussed

  12. Effects induced on the transverse-spatial-impulse response of an inhomogeneous photoreceptor with a nonsymmetric refractive index profile and arbitrarily located origin

    Energy Technology Data Exchange (ETDEWEB)

    Calvo, M.L.; Mondal, P.K.

    1987-03-01

    In a few earlier communications, spatial-transverse-impulse response (STIR) associated with the initial field transversely distributed across the entrance pupil of an inhomogeneous optical wave guide (photoreceptor) has been investigated. In the present work, effects of indetermination in the location of the origin on an arbitrarily defined refractive index profile, representing the degree of inhomogeneity at the aperture pupil of a single receptor, have been studied. Some consequences related to a few possible technical applications have been discussed.

  13. Peculiarities of the fundamental mode structure in stable-resonator lasers upon spatially inhomogeneous amplification

    International Nuclear Information System (INIS)

    Gorbunkov, Mikhail V; Kostryukov, P V; Telegin, L S; Tunkin, V G; Yakovlev, D V

    2007-01-01

    The structure of the fundamental mode of a laser is calculated by the iteration Fox-Li method in the case of inhomogeneous unsaturated amplification produced by axially symmetric longitudinal pumping. The calculation is performed for different parameters g 1 and g 2 of the resonator within the entire stability region. It is shown that in the case of inhomogeneous amplification, the fundamental mode considerably deviates from the Gaussian mode of an empty resonator only in the so-called critical configurations of the resonator, when the quantity [arccos(g 1 g 2 ) 1/2 ]/π is zero or takes a number of values expressed by irreducible fractions m/n. For the Fresnel number N F = 9, configurations with m/n = 1/2, 2/5, 3/8, 1/3, 3/10, 1/4, 1/5, 1/6, 1/8, and 1/10 are pronounced. As N F increases, the number of critical configurations increases. The expansion in a system of Laguerre-Gaussian beams shows that the fundamental mode in critical configurations is formed by a set of beams with certain radial indices p phased in the active medium. (resonators. modes)

  14. Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

    International Nuclear Information System (INIS)

    Oh, Changhoon; Ryoo, Hoonchul; Lee, Hyungwoo; Hahn, Jae W.; Kim, Se-Yeon; Yi, Hun-Jung

    2010-01-01

    We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO 2 film on a silicon wafer.

  15. Stimulated Brillouin scattering reflectivity in the case of a spatially smoothed laser beam interacting with an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Tikhonchuk, V.T.; Mounaix, P.; Pesme, D.

    1997-01-01

    The stimulated Brillouin scattering (SBS) instability is investigated theoretically in the case of a spatially smoothed laser beam interacting with an inhomogeneous plasma in the regime of strong ion acoustic damping. The domain of parameters being considered corresponds to most of the present day experiments carried out with nanosecond laser pulses interacting with preformed plasmas: the characteristic length for convective amplification is assumed to be much shorter than the longitudinal correlation length of the laser field. The SBS reflectivity of one individual hot spot is analytically computed taking into account thermal noise emission and pump depletion within the hot spot. The SBS reflectivity of the whole beam is then obtained by summing up the individual hot spot reflectivities in accordance with their statistical distribution. copyright 1997 American Institute of Physics

  16. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Karni, O., E-mail: oulrik@tx.technion.ac.il; Mikhelashvili, V.; Eisenstein, G. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Kuchar, K. J. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Capua, A. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); IBM Almaden Research Center, San Jose, 95120 California (United States); Sęk, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Ivanov, V.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)

    2014-03-24

    We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

  17. Second-order analysis of inhomogeneous spatial point processes with proportional intensity functions

    DEFF Research Database (Denmark)

    Guan, Yongtao; Waagepetersen, Rasmus; Beale, Colin M.

    2008-01-01

    of the intensity functions. The first approach is based on nonparametric kernel-smoothing, whereas the second approach uses a conditional likelihood estimation approach to fit a parametric model for the pair correlation function. A great advantage of the proposed methods is that they do not require the often...... to two spatial point patterns regarding the spatial distributions of birds in the U.K.'s Peak District in 1990 and 2004....

  18. Automated defect spatial signature analysis for semiconductor manufacturing process

    Science.gov (United States)

    Tobin, Jr., Kenneth W.; Gleason, Shaun S.; Karnowski, Thomas P.; Sari-Sarraf, Hamed

    1999-01-01

    An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

  19. Role of spatial inhomogenity in GPCR dimerisation predicted by receptor association-diffusion models

    Science.gov (United States)

    Deshpande, Sneha A.; Pawar, Aiswarya B.; Dighe, Anish; Athale, Chaitanya A.; Sengupta, Durba

    2017-06-01

    G protein-coupled receptor (GPCR) association is an emerging paradigm with far reaching implications in the regulation of signalling pathways and therapeutic interventions. Recent super resolution microscopy studies have revealed that receptor dimer steady state exhibits sub-second dynamics. In particular the GPCRs, muscarinic acetylcholine receptor M1 (M1MR) and formyl peptide receptor (FPR), have been demonstrated to exhibit a fast association/dissociation kinetics, independent of ligand binding. In this work, we have developed a spatial kinetic Monte Carlo model to investigate receptor homo-dimerisation at a single receptor resolution. Experimentally measured association/dissociation kinetic parameters and diffusion coefficients were used as inputs to the model. To test the effect of membrane spatial heterogeneity on the simulated steady state, simulations were compared to experimental statistics of dimerisation. In the simplest case the receptors are assumed to be diffusing in a spatially homogeneous environment, while spatial heterogeneity is modelled to result from crowding, membrane micro-domains and cytoskeletal compartmentalisation or ‘corrals’. We show that a simple association-diffusion model is sufficient to reproduce M1MR association statistics, but fails to reproduce FPR statistics despite comparable kinetic constants. A parameter sensitivity analysis is required to reproduce the association statistics of FPR. The model reveals the complex interplay between cytoskeletal components and their influence on receptor association kinetics within the features of the membrane landscape. These results constitute an important step towards understanding the factors modulating GPCR organisation.

  20. Modeling tumor control probability for spatially inhomogeneous risk of failure based on clinical outcome data

    DEFF Research Database (Denmark)

    Lühr, Armin; Löck, Steffen; Jakobi, Annika

    2017-01-01

    PURPOSE: Objectives of this work are (1) to derive a general clinically relevant approach to model tumor control probability (TCP) for spatially variable risk of failure and (2) to demonstrate its applicability by estimating TCP for patients planned for photon and proton irradiation. METHODS AND ...

  1. Spatially resolved modelling of inhomogeneous materials with a first order magnetic phase transition

    DEFF Research Database (Denmark)

    Nielsen, Kaspar Kirstein; Bahl, Christian; Smith, Anders

    2017-01-01

    of regions each having a uniform and defined through a Voronoi-map. We show that demagnetising effects, caused by a finite sample size, and spatial variation in can account for the previously experimentally observed 'virgin' effects in the adiabatic temperature change and isothermal entropy change...

  2. Formation of temperature fields in doped anisotropic crystals under spatially inhomogeneous light beams passing through them

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. V.; Markelov, A. S.; Trushin, V. N., E-mail: trushin@phys.unn.ru; Chuprunov, E. V. [Nizhni Novgorod State University (Russian Federation)

    2013-12-15

    The features of formation of thermal fields in potassium dihydrophosphate crystal doped with potassium permanganate under a 532-nm laser beam passing through it have been investigated. Data on the influence of birefringence on the temperature distribution in an anisotropic crystal whose surface is illuminated by a spatially modulated light beam are presented.

  3. Investigation of the marked and long-standing spatial inhomogeneity of the Hungarian suicide rate: a spatial regression approach.

    Science.gov (United States)

    Balint, Lajos; Dome, Peter; Daroczi, Gergely; Gonda, Xenia; Rihmer, Zoltan

    2014-02-01

    In the last century Hungary had astonishingly high suicide rates characterized by marked regional within-country inequalities, a spatial pattern which has been quite stable over time. To explain the above phenomenon at the level of micro-regions (n=175) in the period between 2005 and 2011. Our dependent variable was the age and gender standardized mortality ratio (SMR) for suicide while explanatory variables were factors which are supposed to influence suicide risk, such as measures of religious and political integration, travel time accessibility of psychiatric services, alcohol consumption, unemployment and disability pensionery. When applying the ordinary least squared regression model, the residuals were found to be spatially autocorrelated, which indicates the violation of the assumption on the independence of error terms and - accordingly - the necessity of application of a spatial autoregressive (SAR) model to handle this problem. According to our calculations the SARlag model was a better way (versus the SARerr model) of addressing the problem of spatial autocorrelation, furthermore its substantive meaning is more convenient. SMR was significantly associated with the "political integration" variable in a negative and with "lack of religious integration" and "disability pensionery" variables in a positive manner. Associations were not significant for the remaining explanatory variables. Several important psychiatric variables were not available at the level of micro-regions. We conducted our analysis on aggregate data. Our results may draw attention to the relevance and abiding validity of the classic Durkheimian suicide risk factors - such as lack of social integration - apropos of the spatial pattern of Hungarian suicides. © 2013 Published by Elsevier B.V.

  4. A selfsimilar behavior of the urban structure in the spatially inhomogeneous model

    Science.gov (United States)

    Echkina, E. Y.; Inovenkov, O. I.; Kostomarov, D. P.

    2006-03-01

    At present there is a strong tendency to use new methods for the description of the regional and spatial economy. In increasing frequency we consider that any economic activity is spatially dependent. The problem of the evolution of internal urban formation can be described with the exact supposition. So that is why we use partial derivative equations set with the appropriate boundary and initial conditions for the solving the problem of the urban evolution. Here we describe the model of urban population's density modification taking into account a modification of the housing quality. A program has been created which realizes difference method of mixed problem solution for population's density. For the wide class of coefficients it has been shown that the problem's solution “quickly forgets” the parts of the initial conditions and comes out to the intermediate asymptotic form, which nature depends only on the problem's operator. Actually it means that the urban structure does not depend on external circumstances and is formed by the internal structure of the model.

  5. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  6. Direct Numerical Simulations of NOx formation in spatially developing turbulent premixed Bunsen flames with mixture inhomogeneity

    KAUST Repository

    Luca, Stefano

    2017-01-05

    Direct Numerical Simulation of three-dimensional spatially developing turbulent methane/air flames are performed. Four flames are simulated; they differ for the level of premixing of the fuel inlet: one has a fully premixed inlet, the other three have a partially premixed inlet that mimic a common injection strategy in stationary gas turbines. The jet consist of a methane/air mixture with global equivalence ratio ɸ = 0.7 and temperature of 800 K. The simulations are performed at 4 atm. The inlet velocity field and the fuel/air fields were extracted from a fully developed turbulent channel simulation. Chemistry is treated with a new skeletal chemical mechanism consisting of 33 species developed specifically for the DNS. The data are analyzed to study possible influences of partial premixing on the flame structure and the combustion efficiency. The results show that increasing the level of partial premixing, the fluctuations of heat release rate increase, due to the richer and leaner pockets of mixture in the flame, while the conditional mean decreases. Increasing the level of partial premixing, the peak of NO and the range of NO values for a given temperature increase. An analysis of NO production is performed categorizing the different initiation steps in the Ndecomposition through four pathways: thermal, prompt, NNH and NO. Different behaviour with respect to laminar flames is found for the NNH pathway suggesting that turbulence influences this pathway of formation of NO.

  7. Influence of backscattering on the spatial resolution of semiconductor X-ray detectors

    International Nuclear Information System (INIS)

    Hoheisel, M.; Korn, A.; Giersch, J.

    2005-01-01

    Pixelated X-ray detectors using semiconductor layers or scintillators as absorbers are widely used in high-energy physics, medical diagnosis, or non-destructive testing. Their good spatial resolution performance makes them particularly suitable for applications where fine details have to be resolved. Intrinsic limitations of the spatial resolution have been studied in previous simulations. These simulations focused on interactions inside the conversion layer. Transmitted photons were treated as a loss. In this work, we also implemented the structure behind the conversion layer to investigate the impact of backscattering inside the detector setup. We performed Monte Carlo simulations with the program ROSI (Roentgen Simulation) which is based on the well-established EGS4 algorithm. Line-spread functions of different fully implemented detectors were simulated. In order to characterize the detectors' spatial resolution, the modulation transfer functions (MTF) were calculated. The additional broadening of the line-spread function by carrier transport has been ignored in this work. We investigated two different detector types: a directly absorbing pixel detector where a semiconductor slab is bump-bonded to a readout ASIC such as the Medipix-2 setup with Si or GaAs as an absorbing semiconductor layer, and flat-panel detectors with a Se or a CsI converter. We found a significant degradation of the MTF compared to the case without backscattering. At energies above the K-edge of the backscattering material the spatial resolution drops and can account for the observed low-frequency drop of the MTF. Ignoring this backscatter effect might lead to misinterpretations of the charge sharing effect in counting pixel detectors

  8. Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review

    Science.gov (United States)

    Felici, Marco; Pettinari, Giorgio; Biccari, Francesco; Capizzi, Mario; Polimeni, Antonio

    2018-05-01

    We provide a brief survey of the most recent results obtained by performing spatially selective hydrogen irradiation of dilute nitride semiconductors. The striking effects of the formation of stable N–H complexes in these compounds—coupled to the ultrasharp diffusion profile of H therein—can be exploited to tailor the structural (lattice constant) and optoelectronic (energy gap, refractive index, electron effective mass) properties of the material in the growth plane, with a spatial resolution of a few nm. This can be applied to the fabrication of site-controlled quantum dots (QDs) and wires, but also to the realization of the optical elements required for the on-chip manipulation and routing of qubits in fully integrated photonic circuits. The fabricated QDs—which have shown the ability to emit single photons—can also be deterministically coupled with photonic crystal microcavities, proving their inherent suitability to act as integrated light sources in complex nanophotonic devices.

  9. Attenuation of an optical wave propagating in a waveguide, formed by layers of a semiconductor heterostructure, owing to scattering on inhomogeneities

    International Nuclear Information System (INIS)

    Bogatov, Alexandr P; Burmistrov, I S

    1999-01-01

    The scattering of an optical wave, propagating in a waveguide made up of layers of a semiconductor heterostructure, is analysed. The attenuation coefficient of the wave is found both for quasi-homogeneous single-crystal layers of a semiconductor solid solution and for layers containing quantum dots. (active media)

  10. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  11. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-01-01

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

  12. Space- and time-dependent quantum dynamics of spatially indirect excitons in semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Grasselli, Federico, E-mail: federico.grasselli@unimore.it; Goldoni, Guido, E-mail: guido.goldoni@unimore.it [Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Modena (Italy); CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy); Bertoni, Andrea, E-mail: andrea.bertoni@nano.cnr.it [CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy)

    2015-01-21

    We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.

  13. Inhomogeneous microstructural growth by irradiation

    DEFF Research Database (Denmark)

    Krishan, K.; Singh, Bachu Narain; Leffers, Torben

    1985-01-01

    In the present paper we discuss the development of heterogeneous microstructure for uniform irradiation conditions. It is shown that microstructural inhomogeneities on a scale of 0.1 μm can develop purely from kinematic considerations because of the basic structure of the rate equations used...... to describe such evolution. Two aspects of the growth of such inhomogeneities are discussed. Firstly, it is shown that a local variation in the sink densities of the various microstructural defects will tend to enhance the inhomogeneity rather than remove it. Secondly, such inhomogeneities will lead to point...... defect fluxes that result in a spatial growth of the inhomogeneous region, which will be stopped only when the microstructural density around this region becomes large. The results have important implications in the formation of denuded zones and void formation in metals....

  14. Can a one-layer optical skin model including melanin and inhomogeneously distributed blood explain spatially resolved diffuse reflectance spectra?

    Science.gov (United States)

    Karlsson, Hanna; Pettersson, Anders; Larsson, Marcus; Strömberg, Tomas

    2011-02-01

    Model based analysis of calibrated diffuse reflectance spectroscopy can be used for determining oxygenation and concentration of skin chromophores. This study aimed at assessing the effect of including melanin in addition to hemoglobin (Hb) as chromophores and compensating for inhomogeneously distributed blood (vessel packaging), in a single-layer skin model. Spectra from four humans were collected during different provocations using a twochannel fiber optic probe with source-detector separations 0.4 and 1.2 mm. Absolute calibrated spectra using data from either a single distance or both distances were analyzed using inverse Monte Carlo for light transport and Levenberg-Marquardt for non-linear fitting. The model fitting was excellent using a single distance. However, the estimated model failed to explain spectra from the other distance. The two-distance model did not fit the data well at either distance. Model fitting was significantly improved including melanin and vessel packaging. The most prominent effect when fitting data from the larger separation compared to the smaller separation was a different light scattering decay with wavelength, while the tissue fraction of Hb and saturation were similar. For modeling spectra at both distances, we propose using either a multi-layer skin model or a more advanced model for the scattering phase function.

  15. Particle creation in inhomogeneous spacetimes

    International Nuclear Information System (INIS)

    Frieman, J.A.

    1989-01-01

    We study the creation of particles by inhomogeneous perturbations of spatially flat Friedmann-Robertson-Walker cosmologies. For massless scalar fields, the pair-creation probability can be expressed in terms of geometric quantities (curvature invariants). The results suggest that inhomogeneities on scales up to the particle horizon will be damped out near the Planck time. Perturbations on scales larger than the horizon are explicitly shown to yield no created pairs. The results generalize to inhomogeneous spacetimes several earlier studies of pair creation in homogeneous anisotropic cosmologies

  16. Inhomogeneous superconductors

    International Nuclear Information System (INIS)

    Tinkham, M.

    1978-01-01

    The coherence length xi and penetration depth lambda set the characteristic length scales in superconductors, typically 100 to 5,000 A. A lattice of flux lines, each carrying a single quantum, can penetrate type II superconductors, i.e., those for which kappa identical with lambda/xi > 1/√2. Inhomogeneities on the scale of the flux lattice spacing are required to pin the lattice to prevent dissipative flux motion. Recent work using voids as pinning centers has demonstrated this principle, but practical materials rely on cold-work, inclusions of second phases, etc., to provide the inhomogeneity. For stability against thermal fluctuations, the superconductor should have the form of many filaments of diameter 10 to 100 μm imbedded in a highly conductive normal metal matrix. Such wire is made by drawing down billets of copper containing rods of the superconductor. An alternative approach is the metallurgical one of Tsuei, which leads to thousands of superconducting filamentary segments in a copper matrix. The superconducting proximity effect causes the whole material to superconduct at low current densities. At high current densities, the range of the proximity effect is reduced so that the effective superconducting volume fraction falls below the percolation threshold, and a finite resistance arises from the copper matrix. But, because of the extremely elongated filaments, this resistance is orders of magnitude lower than that of the normal wire, and low enough to permit the possibility of technical applications

  17. Quasiparticle lifetimes and tunneling times in a superconductor-insulator-superconductor tunnel junction with spatially inhomogeneous electrodes

    International Nuclear Information System (INIS)

    Golubov, A.A.; Houwman, E.P.; Gijsbertsen, J.G.; Flokstra, J.; Rogalla, H.; le Grand, J.B.; de Korte, P.A.J.

    1994-01-01

    The low-energy quasiparticle scattering and recombination lifetimes for a proximity sandwich of two superconductors S and S' with different bulk energy gaps, are calculated as a function of the spatial coordinate and temperature. The spatial dependence of the order parameter and density of states are calculated on the basis of a microscopic model of the proximity effect, based on the Usadel equations, for dirty superconductors in thermal equilibrium. A zero boundary resistance between S and S' and a Boltzmann-like energy distribution of the excess quasiparticles are assumed. In the case of a small diffusion time constant an effective quasiparticle relaxation rate into and excitation rate out of the reduced gap region in the SS' sandwich are obtained as a function of (finite, but low) temperature and strength of the proximity effect, determined by the parameter γ m , by averaging over the energies and positions of the quasiparticles. In the same way effective tunneling times for electrons and holes tunneling out of the trap in the SS' sandwich to the other electrode of an SS'IS''S junction are determined as a function of temperature, voltage, and γ m

  18. Hunting local Mixmaster dynamics in spatially inhomogeneous cosmologies[04.20.Dw Singularities and cosmic censorship; 04.25.Dm Numerical relativity; 98.80.Jk Mathematical and relativistic aspects of cosmology;

    Energy Technology Data Exchange (ETDEWEB)

    Berger, Beverly K [Physics Division, National Science Foundation, Arlington, VA 22207 (United States)

    2004-02-07

    Heuristic arguments and numerical simulations support the Belinskii, Khalatnikov and Lifshitz (BKL) claim that the approach to the singularity in generic gravitational collapse is characterized by local Mixmaster dynamics (LMD). Here, one way to identify LMD in collapsing spatially inhomogeneous cosmologies is explored. By writing the metric of one spacetime in the standard variables of another, signatures for LMD may be found. Such signatures for the dynamics of spatially homogeneous Mixmaster models in the variables of U(1)-symmetric cosmologies are reviewed. Similar constructions for U(1)-symmetric spacetimes in terms of the dynamics of generic T{sup 2}-symmetric spacetime are presented.

  19. Inhomogeneous wire explosion in water

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Kong, H.J.; Lee, S.S.

    1980-01-01

    Inhomogeneous processes are observed in underwater copper wire explosion induced by a condensed capacitor discharge. The wire used is 0.1 mm in diameter and 10 mm long, and the capacitor of 2 μF is charged to 5 KV. A N 2 laser is used for the diagnostic of spatial extension of exploding copper vapour. The photographs obtained in this experiment show unambiguously the inhomogeneous explosion along the exploding wire. The quenching of plasma by the surrounding water inhibits the expansion of the vapour. It is believed the observed inhomogeneous explosion along the wire is located and localized around Goronkin's striae, which was first reported by Goronkin and discussed by Froengel as a pre-breakdown phenomenon. (author)

  20. Parametric instabilities in inhomogeneous plasma

    International Nuclear Information System (INIS)

    Nicholson, D.R.

    1975-01-01

    The nonlinear coupling of three waves in a plasma is considered. One of the waves is assumed large and constant; its amplitude is the parameter of the parametric instability. The spatial-temporal evolution of the other two waves is treated theoretically, in one dimension, by analytic methods and by direct numerical integration of the basic equations. Various monotonic forms of inhomogeneity are considered; agreement with previous work is found and new results are established. Nonmonotonic inhomogeneities are considered, in the form of turbulence and, as a model problem, in the form of a simple sinusoidal modulation. Relatively small amounts of nonmonotonic inhomogeneity, in the presence of a linear density gradient, are found to destabilize the well-known convective saturation, absolute growth occurring instead. (U.S.)

  1. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  2. Inhomogeneous anisotropic cosmology

    International Nuclear Information System (INIS)

    Kleban, Matthew; Senatore, Leonardo

    2016-01-01

    In homogeneous and isotropic Friedmann-Robertson-Walker cosmology, the topology of the universe determines its ultimate fate. If the Weak Energy Condition is satisfied, open and flat universes must expand forever, while closed cosmologies can recollapse to a Big Crunch. A similar statement holds for homogeneous but anisotropic (Bianchi) universes. Here, we prove that arbitrarily inhomogeneous and anisotropic cosmologies with “flat” (including toroidal) and “open” (including compact hyperbolic) spatial topology that are initially expanding must continue to expand forever at least in some region at a rate bounded from below by a positive number, despite the presence of arbitrarily large density fluctuations and/or the formation of black holes. Because the set of 3-manifold topologies is countable, a single integer determines the ultimate fate of the universe, and, in a specific sense, most 3-manifolds are “flat” or “open”. Our result has important implications for inflation: if there is a positive cosmological constant (or suitable inflationary potential) and initial conditions for the inflaton, cosmologies with “flat” or “open” topology must expand forever in some region at least as fast as de Sitter space, and are therefore very likely to begin inflationary expansion eventually, regardless of the scale of the inflationary energy or the spectrum and amplitude of initial inhomogeneities and gravitational waves. Our result is also significant for numerical general relativity, which often makes use of periodic (toroidal) boundary conditions.

  3. Collective excitations in semiconductor superlattices and plasma modes of a two-dimensional electron gas with spatially modulated charge density

    International Nuclear Information System (INIS)

    Eliasson, G.L.

    1987-01-01

    The theory of collective excitations in semiconductor superlattices is formulated by using linear response theory. Different kinds of collective excitations in type I (GaAs-GaAlAs) and type II (GaSb-InAs) superlattices are surveyed. Special attention is paid to the presence of surface and finite-size effects. In calculating the dielectric matrix, the effect of different approximations of the system is discussed. The theory for inelastic length scattering (Raman scattering), and for Electron Energy Loss (EEL) due to collective excitations, is formulated. Calculations for several model systems are presented and the main features of the spectra are discussed. In part II the theory of collective excitations of a two-dimensional electron gas with a spatially periodic equilibrium density is formulated. As a first example a periodic array of two-dimensional electron gas strips with constant equilibrium density is studied. The integral equation that describes the charge fluctuations on the strips is derived and solved numerically. The spatial dependence of the density fluctuation across a single strip can be in the form of either propagating or evanescent waves

  4. Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

    OpenAIRE

    Mantsevich, V. N.; Maslova, N. S.

    2009-01-01

    We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conduct...

  5. Problems and progress in radiation physics of semiconductors

    International Nuclear Information System (INIS)

    Vinetskij, V.L.

    1982-01-01

    A survey of the current status of radiation physics of semiconductors comprises the analysis of some new problems and poses the statement of concern. The essential difference between the probability of interstitial-vacancy pair occurrence W(T) in elastic collisions and the generally accepted step distribution with a typical ''threshold'' energy Tsub(d) is indicated. The role of diffusion and reaction evolution of primary defects leading to specific properties of the cluster formation process is shown. Special features of defect formation in spatially inhomogeneous semiconductors, in particular for elastic stresses present, are described. Among most important advances in the radiation physics of semiconductors there are the discovery of non-activation motion of the ''extra'' atom in silicon, the observation of a low activation energy value for the vacancy diffusion, the understanding of subthreshold mechanism of defect formation and radiation-induced diffusion, the effects of laser annealing of defects and oriented crystallization

  6. Inhomogeneous inflation: The initial-value problem

    International Nuclear Information System (INIS)

    Laguna, P.; Kurki-Suonio, H.; Matzner, R.A.

    1991-01-01

    We present a spatially three-dimensional study for solving the initial-value problem in general relativity for inhomogeneous cosmologies. We use York's conformal approach to solve the constraint equations of Einstein's field equations for scalar field sources and find the initial data which will be used in the evolution. This work constitutes the first stage in the development of a code to analyze the effects of matter and spacetime inhomogeneities on inflation

  7. Quasiadiabatic modes from viscous inhomogeneities

    CERN Document Server

    Giovannini, Massimo

    2016-04-20

    The viscous inhomogeneities of a relativistic plasma determine a further class of entropic modes whose amplitude must be sufficiently small since curvature perturbations are observed to be predominantly adiabatic and Gaussian over large scales. When the viscous coefficients only depend on the energy density of the fluid the corresponding curvature fluctuations are shown to be almost adiabatic. After addressing the problem in a gauge-invariant perturbative expansion, the same analysis is repeated at a non-perturbative level by investigating the nonlinear curvature inhomogeneities induced by the spatial variation of the viscous coefficients. It is demonstrated that the quasiadiabatic modes are suppressed in comparison with a bona fide adiabatic solution. Because of its anomalously large tensor to scalar ratio the quasiadiabatic mode cannot be a substitute for the conventional adiabatic paradigm so that, ultimately, the present findings seems to exclude the possibility of a successful accelerated dynamics solely...

  8. Full-wave solution of short impulses in inhomogeneous plasma

    International Nuclear Information System (INIS)

    Ferencz, Orsolya E.

    2005-01-01

    In this paper the problem of real impulse propagation in arbitrarily inhomogeneous media will be presented on a fundamentally new, general, theoretical way. The general problem of wave propagation of monochromatic signals in inhomogeneous media was enlightened. The earlier theoretical models for spatial inhomogeneities have some errors regarding the structure of the resultant signal originated from backward and forward propagating parts. The application of the method of inhomogeneous basic modes (MIBM) and the complete full-wave solution of arbitrarily shaped non-monochromatic plane waves in plasmas made it possible to obtain a better description of the problem, on a fully analytical way, directly from Maxwell's equations. The model investigated in this paper is inhomogeneous of arbitrary order (while the wave pattern can exist), anisotropic (magnetized), linear, cold plasma, in which the gradient of the one-dimensional spatial inhomogeneity is parallel to the direction of propagation. (author)

  9. Curves of growth of spectral lines emitted by a laser-induced plasma: influence of the temporal evolution and spatial inhomogeneity of the plasma

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera, J.A.; Bengoechea, J.; Aragon, C. E-mail: carlos.aragon@unavarra.es

    2003-02-03

    The curves of growth (COG) of five Fe I lines emitted from a laser-induced plasma, generated with Fe-Ni alloys in air at atmospheric pressure, have been investigated. Spectral lines with different energy levels and line widths, emitted with a broad range of optical depths, have been included in the study in order to check the validity of theoretical models proposed for COG generation, based in the radiative transfer within a plasma in local thermodynamic equilibrium. The COGs have been measured at time windows of 4-5 {mu}s and 15-18 {mu}s. The Stark widths of the Fe I lines have been obtained, and the line widths have been determined by measuring the plasma electron density at the time windows selected. It is shown that at a time window of 4-5 {mu}s, the inhomogeneity of the plasma magnitudes has an important influence on the COGs of intense lines. For this time window, a two-region model of the plasma has been used to generate theoretical COGs that describe satisfactorily the experimental curves of all the lines using a single set of plasma parameters. The results reveal the existence of considerable gradients between the inner and the outer plasma regions in the temperature (9400-7800 K) and in the density of Fe atoms (4x10{sup 16}-0.02x10{sup 16} cm{sup -3} for a sample with 100% Fe). On the contrary, at the time window 15-18 {mu}s, at which the plasma has suffered most of its expansion and cooling process, the COGs of all the lines may be described by a single-region model, corresponding to a plasma with uniform temperature (6700 K) and density of Fe atoms (0.06x10{sup 16} cm{sup -3} for a sample with 100% Fe). It is also shown that at initial times, the plasma inhomogeneity has an important effect in the line profiles of intense spectral lines, which are described by using the two-region model of the laser-induced plasma.

  10. Multicolour Observations, Inhomogeneity & Evolution

    OpenAIRE

    Hellaby, Charles

    2000-01-01

    We propose a method of testing source evolution theories that is independent of the effects of inhomogeneity, and thus complementary to other studies of evolution. It is suitable for large scale sky surveys, and the new generation of large telescopes. In an earlier paper it was shown that basic cosmological observations - luminosity versus redshift, area distance versus redshift and number counts versus redshift - cannot separate the effects of cosmic inhomogeneity, cosmic evolution and sourc...

  11. Transport Imaging of Spatial Distribution of Mobility-Lifetime (Micro Tau) Product in Bulk Semiconductors for Nuclear Radiation Detection

    Science.gov (United States)

    2012-06-01

    reproducibility for currents of 3×10-10 A, and 6×10-10 A. An operating current of 1×10-10 A shows higher variations in the distribution beginning at...York: John Wiley & Sons, 2000. [21] A. Owens and A. Peacock , “Compound semiconductor radiation detectors,” Nucl. Instr. and Meth. A, vol. 531, pp. 18...A. G. Kozorezov, J. K. Wigmore, A. Owens, R. den Hartog, A. Peacock , and H. A. Al-Jawari, “Resolution degradation of semiconductor detectors due to

  12. Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Borri, Paola; Hvam, Jørn Märcher

    1998-01-01

    The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms...

  13. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  14. Instabilities in inhomogeneous plasma

    International Nuclear Information System (INIS)

    Mikhailovsky, A.B.

    1983-01-01

    The plasma inhomogeneity across the magnetic field causes a wide class of instabilities which are called instabilities of an inhomogeneous plasma or gradient instabilities. The instabilities that can be studied in the approximation of a magnetic field with parallel straight field lines are treated first, followed by a discussion of the influence of shear on these instabilities. The instabilities of a weakly inhomogeneous plasma with the Maxwellian velocity distribution of particles caused by the density and temperature gradients are often called drift instabilities, and the corresponding types of perturbations are the drift waves. An elementary theory of drift instabilities is presented, based on the simplest equations of motion of particles in the field of low-frequency and long-wavelength perturbations. Following that is a more complete theory of inhomogeneous collisionless plasma instabilities which uses the permittivity tensor and, in the case of electrostatic perturbations, the scalar of permittivity. The results are used to study the instabilities of a strongly inhomogeneous plasma. The instabilities of a plasma in crossed fields are discussed and the electromagnetic instabilities of plasma with finite and high pressure are described. (Auth.)

  15. Big Bounce and inhomogeneities

    International Nuclear Information System (INIS)

    Brizuela, David; Mena Marugan, Guillermo A; Pawlowski, Tomasz

    2010-01-01

    The dynamics of an inhomogeneous universe is studied with the methods of loop quantum cosmology, via a so-called hybrid quantization, as an example of the quantization of vacuum cosmological spacetimes containing gravitational waves (Gowdy spacetimes). The analysis of this model with an infinite number of degrees of freedom, performed at the effective level, shows that (i) the initial Big Bang singularity is replaced (as in the case of homogeneous cosmological models) by a Big Bounce, joining deterministically two large universes, (ii) the universe size at the bounce is at least of the same order of magnitude as that of the background homogeneous universe and (iii) for each gravitational wave mode, the difference in amplitude at very early and very late times has a vanishing statistical average when the bounce dynamics is strongly dominated by the inhomogeneities, whereas this average is positive when the dynamics is in a near-vacuum regime, so that statistically the inhomogeneities are amplified. (fast track communication)

  16. Antennas in inhomogeneous media

    CERN Document Server

    Galejs, Janis; Fock, V A; Wait, J R

    2013-01-01

    Antennas in Inhomogeneous Media details the methods of analyzing antennas in such inhomogeneous media. The title covers the complex geometrical configurations along with its variational formulations. The coverage of the text includes various conditions the antennas are subjected to, such as antennas in the interface between two media; antennas in compressible isotropic plasma; and linear antennas in a magnetoionic medium. The selection also covers insulated loops in lossy media; slot antennas with a stratified dielectric or isotropic plasma layers; and cavity-backed slot antennas. The book wil

  17. Theory of Thomson scattering in inhomogeneous media.

    Science.gov (United States)

    Kozlowski, P M; Crowley, B J B; Gericke, D O; Regan, S P; Gregori, G

    2016-04-12

    Thomson scattering of laser light is one of the most fundamental diagnostics of plasma density, temperature and magnetic fields. It relies on the assumption that the properties in the probed volume are homogeneous and constant during the probing time. On the other hand, laboratory plasmas are seldom uniform and homogeneous on the temporal and spatial dimensions over which data is collected. This is particularly true for laser-produced high-energy-density matter, which often exhibits steep gradients in temperature, density and pressure, on a scale determined by the laser focus. Here, we discuss the modification of the cross section for Thomson scattering in fully-ionized media exhibiting steep spatial inhomogeneities and/or fast temporal fluctuations. We show that the predicted Thomson scattering spectra are greatly altered compared to the uniform case, and may lead to violations of detailed balance. Therefore, careful interpretation of the spectra is necessary for spatially or temporally inhomogeneous systems.

  18. Inflation and inhomogeneities: a hybrid quantization

    International Nuclear Information System (INIS)

    Olmedo, J; Fernández-Méndez, M; Mena Marugán, G A

    2012-01-01

    We provide a complete quantization of a homogeneous and isotropic spacetime with positive spatial curvature coupled to a massive scalar field in the framework of Loop Quantum Cosmology. The physical Hilbert space is constructed out of the space of initial data on the minimum volume section. By means of a perturbative treatment we introduce inhomogeneities and thereafter we adopt a hybrid quantum approach, in which these inhomogeneous degrees of freedom are described by a standard Fock quantization. For the considered case of compact spatial topology, the requirements of: i) invariance of the vacuum state under the spatial isometries, and ii) unitary implementation of the quantum dynamics, pick up a privileged set of canonical fields and a unique Fock representation (up to unitary equivalence).

  19. Influence of the spatially inhomogeneous gap distribution on the quasiparticle current in c-axis junctions involving d-wave superconductors with charge density waves.

    Science.gov (United States)

    Ekino, T; Gabovich, A M; Suan Li, Mai; Szymczak, H; Voitenko, A I

    2016-11-09

    The quasiparticle tunnel current J(V) between the superconducting ab-planes along the c-axis and the corresponding conductance [Formula: see text] were calculated for symmetric junctions composed of disordered d-wave layered superconductors partially gapped by charge density waves (CDWs). Here, V is the voltage. Both the checkerboard and unidirectional CDWs were considered. It was shown that the spatial spread of the CDW-pairing strength substantially smears the peculiarities of G(V) appropriate to uniform superconductors. The resulting curves G(V) become very similar to those observed for a number of cuprates in intrinsic junctions, e.g. mesas. In particular, the influence of CDWs may explain the peak-dip-hump structures frequently found for high-T c oxides.

  20. Spatial hole burning and spectral stability of a quantum-dot laser

    International Nuclear Information System (INIS)

    Savelyev, A. V.; Korenev, V. V.; Maximov, M. V.; Zhukov, A. E.

    2015-01-01

    The inhomogeneous intensity distribution of the optical model along the axis of a semiconductor quantum-dot laser results in spatial hole burning. The influence of this phenomenon on the stability of the multifrequency emission spectrum is studied when the optical transition of the quantum dots is characterized by considerable homogeneous broadening. The results of two models—in which inhomogeneous broadening is disregarded and taken into account—regarding the stability of the radiation spectrum under the influence of slight variation of the spectral loss dependence in the resonator are compared. Inhomogeneous distribution of the charge carriers (spatial hole burning) is found to be a critical factor in determining the form and stability of the spectrum

  1. Spatial hole burning and spectral stability of a quantum-dot laser

    Energy Technology Data Exchange (ETDEWEB)

    Savelyev, A. V., E-mail: savelev@mail.ioffe.ru; Korenev, V. V.; Maximov, M. V.; Zhukov, A. E. [Russian Academy of Sciences, Nanotechnology Center, St. Petersburg Academic University (Russian Federation)

    2015-11-15

    The inhomogeneous intensity distribution of the optical model along the axis of a semiconductor quantum-dot laser results in spatial hole burning. The influence of this phenomenon on the stability of the multifrequency emission spectrum is studied when the optical transition of the quantum dots is characterized by considerable homogeneous broadening. The results of two models—in which inhomogeneous broadening is disregarded and taken into account—regarding the stability of the radiation spectrum under the influence of slight variation of the spectral loss dependence in the resonator are compared. Inhomogeneous distribution of the charge carriers (spatial hole burning) is found to be a critical factor in determining the form and stability of the spectrum.

  2. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  3. Random field assessment of nanoscopic inhomogeneity of bone

    OpenAIRE

    Dong, X. Neil; Luo, Qing; Sparkman, Daniel M.; Millwater, Harry R.; Wang, Xiaodu

    2010-01-01

    Bone quality is significantly correlated with the inhomogeneous distribution of material and ultrastructural properties (e.g., modulus and mineralization) of the tissue. Current techniques for quantifying inhomogeneity consist of descriptive statistics such as mean, standard deviation and coefficient of variation. However, these parameters do not describe the spatial variations of bone properties. The objective of this study was to develop a novel statistical method to characterize and quanti...

  4. Inhomogeneous compact extra dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Bronnikov, K.A. [Center of Gravity and Fundamental Metrology, VNIIMS, 46 Ozyornaya st., Moscow 119361 (Russian Federation); Budaev, R.I.; Grobov, A.V.; Dmitriev, A.E.; Rubin, Sergey G., E-mail: kb20@yandex.ru, E-mail: buday48@mail.ru, E-mail: alexey.grobov@gmail.com, E-mail: alexdintras@mail.ru, E-mail: sergeirubin@list.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow (Russian Federation)

    2017-10-01

    We show that an inhomogeneous compact extra space possesses two necessary features— their existence does not contradict the observable value of the cosmological constant Λ{sub 4} in pure f ( R ) theory, and the extra dimensions are stable relative to the 'radion mode' of perturbations, the only mode considered. For a two-dimensional extra space, both analytical and numerical solutions for the metric are found, able to provide a zero or arbitrarily small Λ{sub 4}. A no-go theorem has also been proved, that maximally symmetric compact extra spaces are inconsistent with 4D Minkowski space in the framework of pure f ( R ) gravity.

  5. The inhomogeneous Suslov problem

    Energy Technology Data Exchange (ETDEWEB)

    García-Naranjo, Luis C., E-mail: luis@mym.iimas.unam.mx [Departamento de Matemáticas y Mecánica, IIMAS-UNAM, Apdo Postal 20-726, Mexico City 01000 (Mexico); Maciejewski, Andrzej J., E-mail: andrzej.j.maciejewski@gmail.com [J. Kepler Institute of Astronomy, University of Zielona Góra, Licealna 9, 65-417 Zielona Góra (Poland); Marrero, Juan C., E-mail: jcmarrero@ull.edu.es [ULL-CSIC, Geometría Diferencial y Mecánica Geométrica, Departamento de Matemática Fundamental, Facultad de Matemáticas, Universidad de la Laguna, La Laguna, Tenerife, Canary Islands (Spain); Przybylska, Maria, E-mail: M.Przybylska@if.uz.zgora.pl [Institute of Physics, University of Zielona Góra, Licealna 9, 65-417 Zielona Góra (Poland)

    2014-06-27

    We consider the Suslov problem of nonholonomic rigid body motion with inhomogeneous constraints. We show that if the direction along which the Suslov constraint is enforced is perpendicular to a principal axis of inertia of the body, then the reduced equations are integrable and, in the generic case, possess a smooth invariant measure. Interestingly, in this generic case, the first integral that permits integration is transcendental and the density of the invariant measure depends on the angular velocities. We also study the Painlevé property of the solutions. - Highlights: • We consider the Suslov problem of nonholonomic rigid body motion with inhomogeneous constraints. • We study the problem in detail for a particular choice of the parameters that has a clear physical interpretation. • We show that the equations of motion possess an invariant measure whose density depends on the velocity variables. • We show that the reduced system is integrable due to the existence of a transcendental first integral. • We study the Painlevé property of the solutions.

  6. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  7. How Forest Inhomogeneities Affect the Edge Flow

    DEFF Research Database (Denmark)

    Boudreault, Louis-Étienne; Dupont, Sylvain; Bechmann, Andreas

    2016-01-01

    Most of our knowledge on forest-edge flows comes from numerical and wind-tunnel experiments where canopies are horizontally homogeneous. To investigate the impact of tree-scale heterogeneities (>1 m) on the edge-flow dynamics, the flow in an inhomogeneous forest edge on Falster island in Denmark...... is investigated using large-eddy simulation. The three-dimensional forest structure is prescribed in the model using high resolution helicopter-based lidar scans. After evaluating the simulation against wind measurements upwind and downwind of the forest leading edge, the flow dynamics are compared between...... the scanned forest and an equivalent homogeneous forest. The simulations reveal that forest inhomogeneities facilitate flow penetration into the canopy from the edge, inducing important dispersive fluxes in the edge region as a consequence of the flow spatial variability. Further downstream from the edge...

  8. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  9. geometric optics and WKB method for electromagnetic wave propagation in an inhomogeneous plasma near cutoff

    Energy Technology Data Exchange (ETDEWEB)

    Light, Max Eugene [Los Alamos National Laboratory

    2017-04-13

    This report outlines the theory underlying electromagnetic (EM) wave propagation in an unmagnetized, inhomogeneous plasma. The inhomogeneity is given by a spatially nonuniform plasma electron density ne(r), which will modify the wave propagation in the direction of the gradient rne(r).

  10. Inclusions and inhomogeneities under stress

    CSIR Research Space (South Africa)

    Nabarro, FRN

    1996-02-01

    Full Text Available Some general theorems, new and old, concerning the behaviour of elastic inclusions and inhomogeneities in bodies without or with external stress, are assembled. The principal new result is that arbitrary external tractions cannot influence the shape...

  11. Threshold of decay instability in an inhomogeneous plasma (Leningrad 1973)

    International Nuclear Information System (INIS)

    Piliia, A.D.

    It is shown that in a spatially inhomogeneous plasma there can exist an absolute decay instability with a threshold lower than that found earlier. This instability arises when two parametrically coupled waves have turning points inside the plasma layer. The cause of the instability is a positive inverse coupling, caused by a nonlinear conversion and a reflection of the waves

  12. Vacuum inhomogeneous cosmological models

    International Nuclear Information System (INIS)

    Hanquin, J.-L.

    1984-01-01

    The author presents some results concerning the vacuum cosmological models which admit a 2-dimensional Abelian group of isometries: classifications of these space-times based on the topological nature of their space-like hypersurfaces and on their time evolution, analysis of the asymptotical behaviours at spatial infinity for hyperbolical models as well as in the neighbourhood of the singularity for the models possessing a time singularity during their evolution. (Auth.)

  13. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  14. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

    Science.gov (United States)

    Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

    2013-12-01

    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  15. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  16. The effect of body bias of the metal-oxide-semiconductor field-effect transistor in the resistive network on spatial current distribution in a bio-inspired complementary metal-oxide-semiconductor vision chip

    Science.gov (United States)

    Kong, Jae-Sung; Hyun, Hyo-Young; Seo, Sang-Ho; Shin, Jang-Kyoo

    2008-11-01

    Complementary metal-oxide-semiconductor (CMOS) vision chips for edge detection based on a resistive circuit have recently been developed. These chips help in the creation of neuromorphic systems of a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends predominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the metal-oxide-semiconductor field-effect transistor for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160 × 120 CMOS vision chips have been fabricated using a standard CMOS technology. The experimental results nicely match our prediction.

  17. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    International Nuclear Information System (INIS)

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-01-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

  18. Dynamics of inhomogeneous chiral condensates

    Science.gov (United States)

    Carlomagno, Juan Pablo; Krein, Gastão; Kroff, Daniel; Peixoto, Thiago

    2018-01-01

    We study the dynamics of the formation of inhomogeneous chirally broken phases in the final stages of a heavy-ion collision, with particular interest on the time scales involved in the formation process. The study is conducted within the framework of a Ginzburg-Landau time evolution, driven by a free energy functional motivated by the Nambu-Jona-Lasinio model. Expansion of the medium is modeled by one-dimensional Bjorken flow and its effect on the formation of inhomogeneous condensates is investigated. We also use a free energy functional from a nonlocal Nambu-Jona-Lasinio model which predicts metastable phases that lead to long-lived inhomogeneous condensates before reaching an equilibrium phase with homogeneous condensates.

  19. Spectroscopy and Raman imaging of inhomogeneous materials

    International Nuclear Information System (INIS)

    Maslova, Olga

    2014-01-01

    This thesis is aimed at developing methodologies in Raman spectroscopy and imaging. After reviewing the statistical instruments which allow treating giant amount of data (multivariate analysis and classification), the study is applied to two families of well-known materials which are used as models for testing the limits of the implemented developments. The first family is a series of carbon materials pyrolyzed at various temperatures and exhibiting inhomogeneities at a nm scale which is suitable for Raman-X-ray diffraction combination. Another results concern the polishing effect on carbon structure. Since it is found to induce Raman artifacts leading to the overestimation of the local structural disorder, a method based on the use of the G band width is therefore proposed in order to evaluate the crystallite size in both unpolished and polished nano-graphites. The second class of materials presents inhomogeneities at higher (micrometric) scales by the example of uranium dioxide ceramics. Being well adapted in terms of spatial scale, Raman imaging is thus used for probing their surfaces. Data processing is implemented via an approach combining the multivariate (principal component) analysis and the classical fitting procedure with Lorentzian profiles. The interpretation of results is supported via electron backscattering diffraction (EBSD) analysis which enables us to distinguish the orientation effects of ceramic grains from other underlying contributions. The last ones are mainly localized at the grain boundaries, that is testified by the appearance of a specific Raman mode. Their origin seems to be caused by stoichiometric oxygen variations or impurities, as well as strain inhomogeneities. The perspectives of this work include both the implementation of other mathematical methods and in-depth analysis of UO 2 structure damaged by irradiation (anisotropic effects, role of grain boundaries). (author) [fr

  20. Experimental study of disorder in a semiconductor microcavity

    Science.gov (United States)

    Gurioli, M.; Bogani, F.; Wiersma, D. S.; Roussignol, Ph.; Cassabois, G.; Khitrova, G.; Gibbs, H.

    2001-10-01

    A detailed study of the structural disorder in wedge semiconductor microcavities (MC's) is presented. We demonstrate that images of the coherent emission from the MC surface can be used for a careful characterization of both intrinsic and extrinsic optical properties of semiconductor MC's. The polariton broadening can be measured directly, avoiding the well-known problem of inhomogeneous broadening due to the MC wedge. A statistical analysis of the spatial line shape of the images of the MC surface shows the presence of static disorder associated with dielectric fluctuations in the Bragg reflector. Moreover, the presence of local fluctuations of the effective cavity length can be detected with subnanometer resolution. The analysis of the resonant Rayleigh scattering (RRS) gives additional information on the origin of the disorder. We find that the RRS is dominated by the scattering of the photonic component of the MC polariton by disorder in the Bragg reflector. Also the RRS is strongly enhanced along the [110] and [11¯0] directions. This peculiar scattering pattern is attributed to misfit dislocations induced by the large thickness of the mismatched AlGaAs alloy in the Bragg mirrors.

  1. A theoretical description of inhomogeneous turbulence

    International Nuclear Information System (INIS)

    Turner, L.

    2000-01-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). In this LDRD, we have developed a highly compact and descriptive formalism that allows us to broach the theoretically formidable morass of inhomogeneous turbulence. Our formalism has two novel aspects: (a) an adaptation of helicity basis functions to represent an arbitrary incompressible channel flow and (b) the invocation of a hypothesis of random phase. A result of this compact formalism is that the mathematical description of inhomogeneous turbulence looks much like that of homogeneous turbulence--at the moment, the most rigorously explored terrain in turbulence research. As a result, we can explore the effect of boundaries on such important quantities as the gradients of mean flow, mean pressure, triple-velocity correlations and pressure velocity correlations, all of which vanish under the conventional, but artificial, assumption that the turbulence is statistically spatially uniform. Under suitable conditions, we have predicted that a mean flow gradient can develop even when none is initially present

  2. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  3. Simple inhomogeneous cosmological (toy) models

    International Nuclear Information System (INIS)

    Isidro, Eddy G. Chirinos; Zimdahl, Winfried; Vargas, Cristofher Zuñiga

    2016-01-01

    Based on the Lemaître-Tolman-Bondi (LTB) metric we consider two flat inhomogeneous big-bang models. We aim at clarifying, as far as possible analytically, basic features of the dynamics of the simplest inhomogeneous models and to point out the potential usefulness of exact inhomogeneous solutions as generalizations of the homogeneous configurations of the cosmological standard model. We discuss explicitly partial successes but also potential pitfalls of these simplest models. Although primarily seen as toy models, the relevant free parameters are fixed by best-fit values using the Joint Light-curve Analysis (JLA)-sample data. On the basis of a likelihood analysis we find that a local hump with an extension of almost 2 Gpc provides a better description of the observations than a local void for which we obtain a best-fit scale of about 30 Mpc. Future redshift-drift measurements are discussed as a promising tool to discriminate between inhomogeneous configurations and the ΛCDM model.

  4. Quasilinear diffusion in inhomogeneous plasmas

    International Nuclear Information System (INIS)

    Hooley, D.L.

    1975-05-01

    The problem of inhomogeneous diffusion in a plasma is considered with emphasis on its possible application to relativistic electron beams. A one-dimensional model with a background electrostatic field is used to illustrate the basic approach, which is then extended to a two-dimensional plasma with a background magnetic field. Only preliminary results are available. (U.S.)

  5. Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

    Science.gov (United States)

    Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

    2018-04-01

    The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

  6. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  7. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  8. Inhomogeneous Markov point processes by transformation

    DEFF Research Database (Denmark)

    Jensen, Eva B. Vedel; Nielsen, Linda Stougaard

    2000-01-01

    We construct parametrized models for point processes, allowing for both inhomogeneity and interaction. The inhomogeneity is obtained by applying parametrized transformations to homogeneous Markov point processes. An interesting model class, which can be constructed by this transformation approach......, is that of exponential inhomogeneous Markov point processes. Statistical inference For such processes is discussed in some detail....

  9. Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device

    Science.gov (United States)

    Amorim, Cleber A.; Bernardo, Eric P.; Leite, Edson R.; Chiquito, Adenilson J.

    2018-05-01

    The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO2/Au–Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier height Φ B was estimated from I–V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I–V characteristics exhibited a Gaussian distribution having mean barrier heights {\\overline{{{Φ }}}}B of 0.30 eV and standard deviation σ s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm‑2 K‑2, leading to an effective mass of 0.58m 0. Consequently, the temperature dependence of I–V characteristics of the SnO2 nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.

  10. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  11. Diffusion in inhomogeneous polymer membranes

    Science.gov (United States)

    Kasargod, Sameer S.; Adib, Farhad; Neogi, P.

    1995-10-01

    The dual mode sorption solubility isotherms assume, and in instances Zimm-Lundberg analysis of the solubilities show, that glassy polymers are heterogeneous and that the distribution of the solute in the polymer is also inhomogeneous. Under some conditions, the heterogeneities cannot be represented as holes. A mathematical model describing diffusion in inhomogeneous polymer membranes is presented using Cahn and Hilliard's gradient theory. The fractional mass uptake is found to be proportional to the fourth root of time rather than the square root, predicted by Fickian diffusion. This type of diffusion is classified as pseudo-Fickian. The model is compared with one experimental result available. A negative value of the persistence factor is obtained and the results are interpreted.

  12. Inhomogeneities in a Friedmann universe

    International Nuclear Information System (INIS)

    Tauber, G.E.

    1987-08-01

    One of the outstanding problems in cosmology is the growth of inhomogeneities, which are characterized by an anisotropic pressure and density distribution. Following a method developed by McVittie (1967, 1968) it has been possible to find time-dependent spherically symmetric solutions of Einstein's field equations containing an arbitrary pressure and density distribution which connect smoothly to a Friedmann universe for any desired equation of state. (author). 5 refs

  13. Numerical treatment of linearized equations describing inhomogeneous collisionless plasmas

    International Nuclear Information System (INIS)

    Lewis, H.R.

    1979-01-01

    The equations governing the small-signal response of spatially inhomogeneous collisionless plasmas have practical significance in physics, for example in controlled thermonuclear fusion research. Although the solutions are very complicated and the equations are different to solve numerically, effective methods for them are being developed which are applicable when the equilibrium involves only one nonignorable coordinate. The general theoretical framework probably will provide a basis for progress when there are two or three nonignorable coordinates

  14. Random field assessment of nanoscopic inhomogeneity of bone.

    Science.gov (United States)

    Dong, X Neil; Luo, Qing; Sparkman, Daniel M; Millwater, Harry R; Wang, Xiaodu

    2010-12-01

    Bone quality is significantly correlated with the inhomogeneous distribution of material and ultrastructural properties (e.g., modulus and mineralization) of the tissue. Current techniques for quantifying inhomogeneity consist of descriptive statistics such as mean, standard deviation and coefficient of variation. However, these parameters do not describe the spatial variations of bone properties. The objective of this study was to develop a novel statistical method to characterize and quantitatively describe the spatial variation of bone properties at ultrastructural levels. To do so, a random field defined by an exponential covariance function was used to represent the spatial uncertainty of elastic modulus by delineating the correlation of the modulus at different locations in bone lamellae. The correlation length, a characteristic parameter of the covariance function, was employed to estimate the fluctuation of the elastic modulus in the random field. Using this approach, two distribution maps of the elastic modulus within bone lamellae were generated using simulation and compared with those obtained experimentally by a combination of atomic force microscopy and nanoindentation techniques. The simulation-generated maps of elastic modulus were in close agreement with the experimental ones, thus validating the random field approach in defining the inhomogeneity of elastic modulus in lamellae of bone. Indeed, generation of such random fields will facilitate multi-scale modeling of bone in more pragmatic details. Copyright © 2010 Elsevier Inc. All rights reserved.

  15. Electron-positron pair production in inhomogeneous electromagnetic fields

    International Nuclear Information System (INIS)

    Kohlfürst, C.

    2015-01-01

    The process of electron-positron pair production is investigated within the phase-space Wigner formalism. The similarities between atomic ionization and pair production for homogeneous, but time-dependent linearly polarized electric fields are examined mainly in the regime of multiphoton absorption (field-dependent threshold, above-threshold pair production). Characteristic signatures in the particle spectra are identified (effective mass, channel closing). The non-monotonic dependence of the particle yield on the carrier frequency is discussed as well. The investigations are then extended to spatially inhomogeneous electric fields. New effects arising due to the spatial dependence of the effective mass are discussed in terms of a semi-classical interpretation. An increase in the normalized particle yield is found for various field configurations.Pair production in inhomogeneous electric and magnetic fields is also studied. The influence of a time-dependent spatially inhomogeneous magnetic field on the momentum spectrum and the particle yield is investigated. The Lorentz invariants are identified to be crucial in order to understand pair production by strong electric fields in the presence of strong magnetic fields. (author) [de

  16. Nonequilibrium statistical Zubarev's operator and Green's functions for an inhomogeneous electron gas

    Directory of Open Access Journals (Sweden)

    P.Kostrobii

    2006-01-01

    Full Text Available Nonequilibrium properties of an inhomogeneous electron gas are studied using the method of the nonequilibrium statistical operator by D.N. Zubarev. Generalized transport equations for the mean values of inhomogeneous operators of the electron number density, momentum density, and total energy density for weakly and strongly nonequilibrium states are obtained. We derive a chain of equations for the Green's functions, which connects commutative time-dependent Green's functions "density-density", "momentum-momentum", "enthalpy-enthalpy" with reduced Green's functions of the generalized transport coefficients and with Green's functions for higher order memory kernels in the case of a weakly nonequilibrium spatially inhomogeneous electron gas.

  17. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  18. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  19. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  20. Correlation characteristics of optical coherence tomography images of turbid media with statistically inhomogeneous optical parameters

    International Nuclear Information System (INIS)

    Dolin, Lev S.; Sergeeva, Ekaterina A.; Turchin, Ilya V.

    2012-01-01

    Noisy structure of optical coherence tomography (OCT) images of turbid medium contains information about spatial variations of its optical parameters. We propose analytical model of statistical characteristics of OCT signal fluctuations from turbid medium with spatially inhomogeneous coefficients of absorption and backscattering. Analytically predicted correlation characteristics of OCT signal from spatially inhomogeneous medium are in good agreement with the results of correlation analysis of OCT images of different biological tissues. The proposed model can be efficiently applied for quantitative evaluation of statistical properties of absorption and backscattering fluctuations basing on correlation characteristics of OCT images.

  1. Slow and fast light in semiconductor waveguides

    DEFF Research Database (Denmark)

    Mørk, Jesper; Hansen, Per Lunnemann; Xue, Weiqi

    2010-01-01

    Investigations of slow and fast light effects in semiconductor waveguides entail interesting physics and point to a number of promising applications. In this review we give an overview of recent progress in the field, in particular focusing on the physical mechanisms of electromagnetically induced...... transparency and coherent population oscillations. While electromagnetically induced transparency has been the most important effect in realizing slowdown effects in atomic gasses, progress has been comparatively slow in semiconductors due to inherent problems of fast dephasing times and inhomogeneous...... broadening in quantum dots. The physics of electromagnetically induced transparency in semiconductors is discussed, emphasizing these limitations and recent suggestions for overcoming them. On the other hand, the mechanism of coherent population oscillations relies on wave mixing effects and is well suited...

  2. Principles of nuclear magnetic resonance imaging using an inhomogeneous polarizing field

    International Nuclear Information System (INIS)

    Briguet, A.; Chaillout, J.; Goldman, M.

    1985-01-01

    In this paper, it is indicated how to reconstruct nuclear magnetic resonance images acquired in an inhomogeneous static magnetic field without the previous knowledge of its spatial distribution. The method provides also the map of the static magnetic field through the sample volume; furthermore it allows the use of non uniform but spatially controlled encoding gradients [fr

  3. Accretion from an inhomogeneous medium

    International Nuclear Information System (INIS)

    Livio, M.; Soker, N.; Koo, M. de; Savonije, G.J.

    1986-01-01

    The problem of accretion by a compact object from an inhomogeneous medium is studied in the general γnot=1 case. The mass accretion rate is found to decrease with increasing γ. The rate of accretion of angular momentum is found to be significantly lower than the rate at which angular momentum is deposited into the Bondi-Hoyle, symmetrical, accretion cylinder. The consequences of the results are studied for the cases of neutron stars accreting from the winds of early-type companions and white dwarfs and main-sequence stars accreting from winds of cool giants. (author)

  4. Inhomogeneous Big Bang Nucleosynthesis Revisited

    OpenAIRE

    Lara, J. F.; Kajino, T.; Mathews, G. J.

    2006-01-01

    We reanalyze the allowed parameters for inhomogeneous big bang nucleosynthesis in light of the WMAP constraints on the baryon-to-photon ratio and a recent measurement which has set the neutron lifetime to be 878.5 +/- 0.7 +/- 0.3 seconds. For a set baryon-to-photon ratio the new lifetime reduces the mass fraction of He4 by 0.0015 but does not significantly change the abundances of other isotopes. This enlarges the region of concordance between He4 and deuterium in the parameter space of the b...

  5. Casimir stress in an inhomogeneous medium

    International Nuclear Information System (INIS)

    Philbin, T.G.; Xiong, C.; Leonhardt, U.

    2010-01-01

    The Casimir effect in an inhomogeneous dielectric is investigated using Lifshitz's theory of electromagnetic vacuum energy. A permittivity function that depends continuously on one Cartesian coordinate is chosen, bounded on each side by homogeneous dielectrics. The result for the Casimir stress is infinite everywhere inside the inhomogeneous region, a divergence that does not occur for piece-wise homogeneous dielectrics with planar boundaries. A Casimir force per unit volume can be extracted from the infinite stress but it diverges on the boundaries between the inhomogeneous medium and the homogeneous dielectrics. An alternative regularization of the vacuum stress is considered that removes the contribution of the inhomogeneity over small distances, where macroscopic electromagnetism is invalid. The alternative regularization yields a finite Casimir stress inside the inhomogeneous region, but the stress and force per unit volume diverge on the boundaries with the homogeneous dielectrics. The case of inhomogeneous dielectrics with planar boundaries thus falls outside the current understanding of the Casimir effect.

  6. Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Puzanov, A. S.; Obolenskiy, S. V., E-mail: obolensk@rf.unn.ru; Kozlov, V. A. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.

  7. Large scale inhomogeneities and the cosmological principle

    International Nuclear Information System (INIS)

    Lukacs, B.; Meszaros, A.

    1984-12-01

    The compatibility of cosmologic principles and possible large scale inhomogeneities of the Universe is discussed. It seems that the strongest symmetry principle which is still compatible with reasonable inhomogeneities, is a full conformal symmetry in the 3-space defined by the cosmological velocity field, but even in such a case, the standard model is isolated from the inhomogeneous ones when the whole evolution is considered. (author)

  8. Inhomogeneous dusty Universes and their deceleration

    CERN Document Server

    Giovannini, Massimo

    2006-01-01

    Exact results stemming directly from Einstein equations imply that inhomogeneous Universes endowed with vanishing pressure density can only decelerate, unless the energy density of the Universe becomes negative. Recent proposals seem to argue that inhomogeneous (but isotropic) space-times, filled only with incoherent matter,may turn into accelerated Universes for sufficiently late times. To scrutinize these scenarios, fully inhomogeneous Einstein equations are discussed in the synchronous system. In a dust-dominated Universe, the inhomogeneous generalization of the deceleration parameter is always positive semi-definite implying that no acceleration takes place.

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  10. Spin diffusion from an inhomogeneous quench in an integrable system.

    Science.gov (United States)

    Ljubotina, Marko; Žnidarič, Marko; Prosen, Tomaž

    2017-07-13

    Generalized hydrodynamics predicts universal ballistic transport in integrable lattice systems when prepared in generic inhomogeneous initial states. However, the ballistic contribution to transport can vanish in systems with additional discrete symmetries. Here we perform large scale numerical simulations of spin dynamics in the anisotropic Heisenberg XXZ spin 1/2 chain starting from an inhomogeneous mixed initial state which is symmetric with respect to a combination of spin reversal and spatial reflection. In the isotropic and easy-axis regimes we find non-ballistic spin transport which we analyse in detail in terms of scaling exponents of the transported magnetization and scaling profiles of the spin density. While in the easy-axis regime we find accurate evidence of normal diffusion, the spin transport in the isotropic case is clearly super-diffusive, with the scaling exponent very close to 2/3, but with universal scaling dynamics which obeys the diffusion equation in nonlinearly scaled time.

  11. Parametric trapping of electromagnetic waves in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Silin, V.P.; Starodub, A.N.

    1977-01-01

    Considered is parametric instability in an inhomogeneous plasma at which a pumping wave is transformed to an electromagnetic wave and aperiodically in-time-growing disturbances. It is shown that after achievement of some boundary pumping value by electric field intensity an absolute parametric instability evolution becomes possible. In-time growing plasma disturbances are localized near electric field extremums of a pumping wave. Such localization areas are small as compared to characteristic size of pumping inhomogeneity in a plasma. The secondary electromagnetic waves stay within the localization areas and, therefore, are not scattered by a plasma. As following from this it has been established, that due to parametric instability electromagnetic radiation trapping by a plasma occurs. Such a trapping is considerably connected with a spatial structure of a pumping field and it cannot arise within the field of a running wave in the theoretical model considered. However parametric trapping turns out to be possible even with very small reflection coefficients

  12. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  13. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  14. Two-photon equivalent weighting of spatial excimer laser beam profiles

    Science.gov (United States)

    Eva, Eric; Bauer, Harry H.; Metzger, K.; Pfeiffer, A.

    2001-04-01

    Damage in optical materials for semiconductor lithography applications caused by exposure to 248 or 193 nm light is usually two-photon driven, hence it is a nonlinear function of incident intensity. Materials should be tested with flat- topped temporal and spatial laser beam profiles to facilitate interpretation of data, but in reality this is hard to achieve. Sandstrom provided a formula that approximates any given temporal pulse shape with a two- photon equivalent rectangular pulse (Second Symposium on 193 nm Lithography, Colorado Springs 1997). Known as the integral-square pulse duration, this definition has been embraced as an industry standard. Originally faced with the problem of comparing results obtained with pseudo-Gaussian spatial profiles to literature data, we found that a general solution for arbitrarily inhomogeneous spatial beam profiles exists which results in a definition much similar to Sandstrom's. In addition, we proved the validity of our approach in experiments with intentionally altered beam profiles.

  15. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  16. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  17. Estimating functions for inhomogeneous Cox processes

    DEFF Research Database (Denmark)

    Waagepetersen, Rasmus

    2006-01-01

    Estimation methods are reviewed for inhomogeneous Cox processes with tractable first and second order properties. We illustrate the various suggestions by means of data examples.......Estimation methods are reviewed for inhomogeneous Cox processes with tractable first and second order properties. We illustrate the various suggestions by means of data examples....

  18. Inhomogeneity and the foundations of concordance cosmology

    International Nuclear Information System (INIS)

    Clarkson, Chris; Maartens, Roy

    2010-01-01

    The apparent accelerating expansion of the universe is forcing us to examine the foundational aspects of the standard model of cosmology-in particular, the fact that dark energy is a direct consequence of the homogeneity assumption. We discuss the foundations of the assumption of spatial homogeneity, in the case when the Copernican principle is adopted. We present results that show how (almost) homogeneity follows from (almost) isotropy of various observables. The analysis requires fully nonlinear field equations-i.e. it is not possible to use second- or higher-order perturbation theory, since one cannot assume a homogeneous and isotropic background. Then we consider what happens if the Copernican principle is abandoned in our Hubble volume. The simplest models are inhomogeneous but spherically symmetric universes which do not require dark energy to fit the distance modulus. Key problems in these models are to compute the CMB anisotropies and the features of large-scale structure. We review how to construct perturbation theory on a non-homogeneous cosmological background, and discuss the complexities that arise in using this to determine the growth of large-scale structure.

  19. Silicon qubit performance in the presence of inhomogeneous strain

    Science.gov (United States)

    Jacobson, N. Tobias; Ward, Daniel R.; Baczewski, Andrew D.; Gamble, John K.; Montano, Ines; Rudolph, Martin; Nielsen, Erik; Carroll, Malcolm

    While gate electrode voltages largely define the potential landscape experienced by electrons in quantum dot (QD) devices, mechanical strain also plays a role. Inhomogeneous strain established over the course of device fabrication, followed by mismatched contraction under cooling to cryogenic temperatures, may significantly perturb this potential. A recent investigation by Thorbeck & Zimmerman suggests that unintentional QDs may form as a result of the latter thermal contraction mismatch mechanism. In this work, we investigate the effects of inhomogeneous strain on QD tunnel barriers and other properties, from the perspective of QD and donor-based qubit performance. Through semiconductor process simulation, we estimate the relative magnitude of strain established during fabrication as compared with thermal expansion coefficient mismatch. Combining these predictions with multi-valley effective mass theory modeling of qubit characteristics, we identify whether strain effects may compel stricter than expected constraints on device dimensions. Finally, we investigate the degree to which strain and charge disorder effects may be distinguished. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

  20. Dynamical stability for finite quantum spin chains against a time-periodic inhomogeneous perturbation

    International Nuclear Information System (INIS)

    Kudo, Kazue; Nakamura, Katsuhiro

    2009-01-01

    We investigate dynamical stability of the ground state against a time-periodic and spatially-inhomogeneous magnetic field for finite quantum XXZ spin chains. We use the survival probability as a measure of stability and demonstrate that it decays as P(t) ∝ t -1/2 under a certain condition. The dynamical properties should also be related to the level statistics of the XXZ spin chains with a constant spatially-inhomogeneous magnetic field. The level statistics depends on the anisotropy parameter and the field strength. We show how the survival probability depends on the anisotropy parameter, the strength and frequency of the field.

  1. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  2. REB-instability with magneto-active inhomogeneous warm plasma

    International Nuclear Information System (INIS)

    El-Shorbagy, K.H.

    2000-07-01

    The beam-plasma heating due to a relativistic electron beam (REB) under the effect of an external static magnetic field is investigated. It is considered that a longitudinal 1-D oscillations exist in the plasma, which is inhomogeneous and bounded in the direction of the beam propagation. It is found that the variation in the plasma density has a profound effect on the spatial beam-plasma instability. Besides, the external static magnetic field and warmness of plasma electron leads to more power absorption from the electron beam, and consequently an auxiliary plasma heating. (author)

  3. REB-Instability with Magneto-Active Inhomogeneous Warm Plasma

    International Nuclear Information System (INIS)

    El-Shorbagy, Kh.H.

    2000-01-01

    The beam-plasma heating due to a relativistic electron beam (REB) under the effect of an external static magnetic field is investigated. It is considered that a longitudinal 1-D oscillations exist in the plasma, which is inhomogeneous and bounded in the direction of the beam propagation. It is found that the variation in the plasma density has a profound effect on the spatial beam-plasma instability. Besides, the external static magnetic field and warmness of plasma electron leads to more power absorption from the electron beam, and consequently an auxiliary plasma heating

  4. Inhomogenous loop quantum cosmology with matter

    International Nuclear Information System (INIS)

    Martín-de Bias, D; Mena Marugán, G A; Martín-Benito, M

    2012-01-01

    The linearly polarized Gowdy T 3 model with a massless scalar field with the same symmetries as the metric is quantized by applying a hybrid approach. The homogeneous geometry degrees of freedom are loop quantized, fact which leads to the resolution of the cosmological singularity, while a Fock quantization is employed for both matter and gravitational inhomogeneities. Owing to the inclusion of the massless scalar field this system allows us to modelize flat Friedmann-Robertson-Walker cosmologies filled with inhomogeneities propagating in one direction. It provides a perfect scenario to study the quantum back-reaction between the inhomogeneities and the polymeric homogeneous and isotropic background.

  5. Inhomogeneous electric field air cleaner

    International Nuclear Information System (INIS)

    Schuster, B.G.

    1976-01-01

    For applications requiring the filtration of air contaminated with enriched uranium, plutonium or other transuranium compounds, it appears desirable to collect the material in a fashion more amenable to recovery than is now practical when material is collected on HEPA filters. In some instances, it may also be desirable to use an air cleaner of this type to substantially reduce the loading to which HEPA filters are subjected. A theoretical evaluation of such an air cleaner considers the interaction between an electrically neutral particle, dielectric or conducting, with an inhomogeneous electric field. An expression is derived for the force exerted on a particle in an electrode configuration of two concentric cylinders. Equations of motion are obtained for a particle suspended in a laminar flow of air passing through this geometry. An electrical quadrupole geometry is also examined and shown to be inferior to the cylindrical one. The results of two separate configurations of the single cell prototypes of the proposed air cleaner are described. These tests were designed to evaluate collection efficiencies using mono-disperse polystyrene latex and polydisperse NaCl aerosols. The advantages and problems of such systems in terms of a large scale air cleaning facility will be discussed

  6. Modulated magnetic structure of an inhomogeneous stressed single crystal FeBO3

    International Nuclear Information System (INIS)

    Sharipiv, M.Z.; Dzhuraev, D.R.; Sokolov, B.Yu.; Kurbanov, M.

    2010-01-01

    With the help of low-symmetry mechanical stresses, we induced an additional spatially inhomogeneous anisotropy in the basal plane of a single crystal FeBO 3 . By the magnetooptical method, we study the effect of an inhomogeneous magnetic anisotropy on the magnetic state of this easy-plane weak ferromagnetic. It is established that, at the magnetization of inhomogeneously stressed FeBO 3 in the basal plane near some separated direction, the crystal transits from the homogeneous state into a spatially modulated magnetic state. The latter can be represented in the form of a static spin wave, in which a local vector of ferromagnetism oscillates near the direction of the mean magnetization of a crystal, by remaining in the basal plane.

  7. Non collinear magnetic phase of the inhomogeneously stressed FeBO3 monocrystals

    International Nuclear Information System (INIS)

    Sharipov, M.Z.

    2011-01-01

    With the help of low-symmetry mechanical stresses, an additional spatially inhomogeneous anisotropy in the basal plane of a single crystal FeBO 3 has been induced. By the magnetooptical method, an effect of the inhomogeneous magnetic anisotropy on the magnetic state of this easy-plane weak ferromagnetic has been investigated. It is established that at the magnetization of inhomogeneously stressed FeBO 3 in the basal plane near the separated direction, the crystal turns from the homogeneous state into a spatially modulated magnetic state. The latter can be represented in the form of a static spin wave, in which a local vector of ferromagnetism oscillates near the direction of the mean magnetization of a crystal, remaining in the basal plane. (authors)

  8. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    International Nuclear Information System (INIS)

    Stollenwerk, Tobias

    2013-09-01

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  9. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  10. Effect of corneal inhomogeneity on the mechanical behavior of the eye

    Science.gov (United States)

    Stein, A. A.; Moiseeva, I. N.

    2018-05-01

    The effect of spatial inhomogeneity of the effective cornea stiffness distribution on the mechanical properties of the eye is investigated on the basis of the two-component model of the eyeball, in which the cornea is represented by a momentless deformable, linearly elastic surface and the scleral region by an elastic element that responds to changes in intraocular pressure by changes in volume. The approach used makes it possible to consider within the same model both the natural corneal inhomogeneity and mechanical consequences of local cornea weakening owing to surgical procedures. The dependences on changes in intraocular pressure of parameters that characterize deformation properties of both the cornea (apex displacement) and the eyeball as a whole (change in intraocular volume) are obtained. For moderate inhomogeneity they differ from the same dependences for the homogenous cornea with effective stiffness equal to the average value for the corresponding inhomogeneous distribution only slightly. However, if the effective stiffness amplitude is very high, corneal inhomogeneity discernibly affects the integral response of the cornea and the eyeball as a whole to changes in pressure. The effect of inhomogeneity on the data of tonometry also mainly depends on the average effective corneal stiffness. The difference between the tonometric and true pressures increases with surgical cornea weakening in the apical region for both Schiøtz and Maklakoff tonometers.

  11. Plasma waves in an inhomogeneous cylindrical plasma

    International Nuclear Information System (INIS)

    Pesic, S.S.

    1976-01-01

    The complete dispersion equation governing small amplitude plasma waves propagating in an inhomogeneous cylindrical plasma confined by a helical magnetic field is solved numerically. The efficiency of the wave energy thermalization in the lower hybrid frequency range is studied

  12. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  13. Ehrenfest force in inhomogeneous magnetic field

    International Nuclear Information System (INIS)

    Sisakyan, A.N.; Shevchenko, O.Yu.; Samojlov, V.N.

    2000-01-01

    The Ehrenfest force in an inhomogeneous magnetic field is calculated. It is shown that there exist such (very rare) topologically nontrivial physical situations when the Gauss theorem in its classic formulation fails and, as a consequence, apart from the usual Lorentz force an additional, purely imaginary force acts on the charged particle. This force arises only in inhomogeneous magnetic fields of special configurations, has a purely quantum origin, and disappears in the classical limit

  14. Impact of cosmic inhomogeneities on SNe observations

    Science.gov (United States)

    Kainulainen, Kimmo; Marra, Valerio

    2010-06-01

    We study the impact of cosmic inhomogeneities on the interpretation of SNe observations. We build an inhomogeneous universe model that can confront supernova data and yet is reasonably well compatible with the Copernican Principle. Our model combines a relatively small local void, that gives apparent acceleration at low redshifts, with a meatball model that gives sizeable lensing (dimming) at high redshifts. Together these two elements, which focus on different effects of voids on the data, allow the model to mimic the concordance model.

  15. Perturbed soliton excitations in inhomogeneous DNA

    International Nuclear Information System (INIS)

    Daniel, M.; Vasumathi, V.

    2005-05-01

    We study nonlinear dynamics of inhomogeneous DNA double helical chain under dynamic plane-base rotator model by considering angular rotation of bases in a plane normal to the helical axis. The DNA dynamics in this case is found to be governed by a perturbed sine-Gordon equation when taking into account the interstrand hydrogen bonding energy and intrastrand inhomogeneous stacking energy and making an analogy with the Heisenberg model of the Hamiltonian for an inhomogeneous anisotropic spin ladder with ferromagnetic legs and antiferromagentic rung coupling. In the homogeneous limit the dynamics is governed by the kink-antikink soliton of the sine-Gordon equation which represents the formation of open state configuration in DNA double helix. The effect of inhomogeneity in stacking energy in the form of localized and periodic variations on the formation of open states in DNA is studied under perturbation. The perturbed soliton is obtained using a multiple scale soliton perturbation theory by solving the associated linear eigen value problem and constructing the complete set of eigen functions. The inhomogeneity in stacking energy is found to modulate the width and speed of the soliton depending on the nature of inhomogeneity. Also it introduces fluctuations in the form of train of pulses or periodic oscillation in the open state configuration (author)

  16. Quantum entanglement in inhomogeneous 1D systems

    Science.gov (United States)

    Ramírez, Giovanni

    2018-04-01

    The entanglement entropy of the ground state of a quantum lattice model with local interactions usually satisfies an area law. However, in 1D systems some violations may appear in inhomogeneous systems or in random systems. In our inhomogeneous system, the inhomogeneity parameter, h, allows us to tune different regimes where a volumetric violation of the area law appears. We apply the strong disorder renormalization group to describe the maximally entangled state of the system in a strong inhomogeneity regime. Moreover, in a weak inhomogeneity regime, we use a continuum approximation to describe the state as a thermo-field double in a conformal field theory with an effective temperature which is proportional to the inhomogeneity parameter of the system. The latter description also shows that the universal scaling features of this model are captured by a massless Dirac fermion in a curved space-time with constant negative curvature R = h2, providing another example of the relation between quantum entanglement and space-time geometry. The results we discuss here were already published before, but here we present a more didactic exposure of basic concepts of the rainbow system for the students attending the Latin American School of Physics "Marcos Moshinsky" 2017.

  17. An estimating function approach to inference for inhomogeneous Neyman-Scott processes

    DEFF Research Database (Denmark)

    Waagepetersen, Rasmus Plenge

    “This paper is concerned with inference for a certain class of inhomogeneous Neyman-Scott point processes depending on spatial covariates. Regression parameter estimates obtained from a simple estimating function are shown to be asymptotically normal when the “mother” intensity for the Neyman-Scott...

  18. An estimating function approach to inference for inhomogeneous Neyman-Scott processes

    DEFF Research Database (Denmark)

    Waagepetersen, Rasmus

    2007-01-01

    This article is concerned with inference for a certain class of inhomogeneous Neyman-Scott point processes depending on spatial covariates. Regression parameter estimates obtained from a simple estimating function are shown to be asymptotically normal when the "mother" intensity for the Neyman-Sc...

  19. The cosmic microwave background in an inhomogeneous universe

    Energy Technology Data Exchange (ETDEWEB)

    Clarkson, Chris; Regis, Marco, E-mail: chris.clarkson@uct.ac.za, E-mail: regis.mrc@gmail.com [Astrophysics, Cosmology and Gravity Centre and Department of Mathematics and Applied Mathematics, University of Cape Town, Rondebosch 7701, Cape Town (South Africa)

    2011-02-01

    The dimming of Type Ia supernovae could be the result of Hubble-scale inhomogeneity in the matter and spatial curvature, rather than signaling the presence of a dark energy component. A key challenge for such models is to fit the detailed spectrum of the cosmic microwave background (CMB). We present a detailed discussion of the small-scale CMB in an inhomogeneous universe, focusing on spherically symmetric 'void' models. We allow for the dynamical effects of radiation while analyzing the problem, in contrast to other work which inadvertently fine tunes its spatial profile. This is a surprisingly important effect and we reach substantially different conclusions. Models which are open at CMB distances fit the CMB power spectrum without fine tuning; these models also fit the supernovae and local Hubble rate data which favour a high expansion rate. Asymptotically flat models may fit the CMB, but require some extra assumptions. We argue that a full treatment of the radiation in these models is necessary if we are to understand the correct constraints from the CMB, as well as other observations which rely on it, such as spectral distortions of the black body spectrum, the kinematic Sunyaev-Zeldovich effect or the Baryon Acoustic Oscillations.

  20. Characterisation of semiconductor materials for ionising radiation detectors

    International Nuclear Information System (INIS)

    Vaitkus, J.; Gaubas, E.; Jasinskaite, R.; Juska, G.; Kazukauskas, V.; Puras, R.; Rahman, M.; Sakalauskas, S.; Smith, K.

    2002-01-01

    Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different 'classical' material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented. Some results of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods

  1. Strict calculation of electron energy distribution functions in inhomogeneous plasmas

    International Nuclear Information System (INIS)

    Winkler, R.

    1996-01-01

    It is objective of the paper to report on strict calculations of the velocity or energy distribution function function and related macroscopic properties of the electrons from appropriate electron kinetic equations under various plasma conditions and to contribute to a better understanding of the electron behaviour in inhomogeneous plasma regions. In particular, the spatial relaxation of plasma electrons acted upon by uniform electric fields, the response of plasma electrons on spatial disturbances of the electric field, the electron kinetics under the impact of space charge field confinement in the dc column plasma and the electron velocity distribution is stronger field as occurring in the electrode regions of a dc glow discharge is considered. (author)

  2. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

    Science.gov (United States)

    Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

    2016-01-01

    The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

  3. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

  4. The nonlinear distortion of propagation cones of lower hybrid wave in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Sanuki, Heiji; Ogino, Tatsuki.

    1976-12-01

    Nonlinear propagation of externally driven waves in the lower hybrid frequency range in an inhomogeneous plasma are investigated. The results of finite temperature, inhomogeneity of the plasma and density depression due to the ponderomotive force are emphasized since these effects are responsible for the propagation characteristics of the waves. The results shows that the waves are localized in a spatial wave packet that propagates into the plasma center along the conical trajectory which makes a small angle with respect to the confining magnetic field. (auth.)

  5. Influence of interface inhomogeneities in thin-film Schottky diodes

    Science.gov (United States)

    Wilson, Joshua; Zhang, Jiawei; Li, Yunpeng; Wang, Yiming; Xin, Qian; Song, Aimin

    2017-11-01

    The scalability of thin-film transistors has been well documented, but there have been very few investigations into the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150, and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness caused a dramatic deterioration of the current-voltage characteristics, most notably increasing the reverse current by nearly five orders of magnitude. Furthermore, the forward characteristics display an increase in the ideality factor and a reduction in the barrier height. The origins of this phenomenon have been elucidated using device simulations. First, when the semiconductor layer is fully depleted, the electric field increases with the reducing thickness, leading to an increased diffusion current. However, the effects of diffusion only offer a small contribution to the huge variations in reverse current seen in the experiments. To fully explain this effect, the role of inhomogeneities in the Schottky barrier height has been considered. Contributions from lower barrier regions (LBRs) are found to dominate the reverse current. The conduction band minimum below these LBRs is strongly dependent upon thickness and bias, leading to reverse current variations as large as several orders of magnitude. Finally, it is demonstrated that the thickness dependence of the reverse current is exacerbated as the magnitude of the inhomogeneities is increased and alleviated in the limit where the LBRs are large enough not to be influenced by the adjacent higher barrier regions.

  6. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  7. Three-dimensional distribution of random velocity inhomogeneities at the Nankai trough seismogenic zone

    Science.gov (United States)

    Takahashi, T.; Obana, K.; Yamamoto, Y.; Nakanishi, A.; Kaiho, Y.; Kodaira, S.; Kaneda, Y.

    2012-12-01

    The Nankai trough in southwestern Japan is a convergent margin where the Philippine sea plate is subducted beneath the Eurasian plate. There are major faults segments of huge earthquakes that are called Tokai, Tonankai and Nankai earthquakes. According to the earthquake occurrence history over the past hundreds years, we must expect various rupture patters such as simultaneous or nearly continuous ruptures of plural fault segments. Japan Agency for Marine-Earth Science and Technology (JAMSTEC) conducted seismic surveys at Nankai trough in order to clarify mutual relations between seismic structures and fault segments, as a part of "Research concerning Interaction Between the Tokai, Tonankai and Nankai Earthquakes" funded by Ministry of Education, Culture, Sports, Science and Technology, Japan. This study evaluated the spatial distribution of random velocity inhomogeneities from Hyuga-nada to Kii-channel by using velocity seismograms of small and moderate sized earthquakes. Random velocity inhomogeneities are estimated by the peak delay time analysis of S-wave envelopes (e.g., Takahashi et al. 2009). Peak delay time is defined as the time lag from the S-wave onset to its maximal amplitude arrival. This quantity mainly reflects the accumulated multiple forward scattering effect due to random inhomogeneities, and is quite insensitive to the inelastic attenuation. Peak delay times are measured from the rms envelopes of horizontal components at 4-8Hz, 8-16Hz and 16-32Hz. This study used the velocity seismograms that are recorded by 495 ocean bottom seismographs and 378 onshore seismic stations. Onshore stations are composed of the F-net and Hi-net stations that are maintained by National Research Institute for Earth Science and Disaster Prevention (NIED) of Japan. It is assumed that the random inhomogeneities are represented by the von Karman type PSDF. Preliminary result of inversion analysis shows that spectral gradient of PSDF (i.e., scale dependence of

  8. Traveltime approximations for inhomogeneous HTI media

    KAUST Repository

    Alkhalifah, Tariq Ali

    2011-01-01

    Traveltimes information is convenient for parameter estimation especially if the medium is described by an anisotropic set of parameters. This is especially true if we could relate traveltimes analytically to these medium parameters, which is generally hard to do in inhomogeneous media. As a result, I develop traveltimes approximations for horizontaly transversely isotropic (HTI) media as simplified and even linear functions of the anisotropic parameters. This is accomplished by perturbing the solution of the HTI eikonal equation with respect to η and the azimuthal symmetry direction (usually used to describe the fracture direction) from a generally inhomogeneous elliptically anisotropic background medium. The resulting approximations can provide accurate analytical description of the traveltime in a homogenous background compared to other published moveout equations out there. These equations will allow us to readily extend the inhomogenous background elliptical anisotropic model to an HTI with a variable, but smoothly varying, η and horizontal symmetry direction values. © 2011 Society of Exploration Geophysicists.

  9. Assessment of inhomogeneous ELF magnetic field exposures

    International Nuclear Information System (INIS)

    Leitgeb, N.; Cech, R.; Schroettner, J.

    2008-01-01

    In daily life as well as at workplaces, exposures to inhomogeneous magnetic fields become very frequent. This makes easily applicable compliance assessment methods increasingly important. Reference levels have been defined linking basic restrictions to levels of homogeneous fields at worst-case exposure conditions. If reference levels are met, compliance with basic restrictions can be assumed. If not, further investigations could still prove compliance. Because of the lower induction efficiency, inhomogeneous magnetic fields such as from electric appliances could be allowed exceeding reference levels. To easily assess inhomogeneous magnetic fields, a quick and flexible multi-step assessment procedure is proposed. On the basis of simulations with numerical, anatomical human models reference factors were calculated elevating reference levels to link hot-spot values measured at source surfaces to basic limits and allowing accounting for different source distance, size, orientation and position. Compliance rules are proposed minimising assessment efforts. (authors)

  10. Inhomogeneous Markov Models for Describing Driving Patterns

    DEFF Research Database (Denmark)

    Iversen, Emil Banning; Møller, Jan K.; Morales, Juan Miguel

    2017-01-01

    . Specifically, an inhomogeneous Markov model that captures the diurnal variation in the use of a vehicle is presented. The model is defined by the time-varying probabilities of starting and ending a trip, and is justified due to the uncertainty associated with the use of the vehicle. The model is fitted to data...... collected from the actual utilization of a vehicle. Inhomogeneous Markov models imply a large number of parameters. The number of parameters in the proposed model is reduced using B-splines....

  11. Inhomogeneous Markov Models for Describing Driving Patterns

    DEFF Research Database (Denmark)

    Iversen, Jan Emil Banning; Møller, Jan Kloppenborg; Morales González, Juan Miguel

    . Specically, an inhomogeneous Markov model that captures the diurnal variation in the use of a vehicle is presented. The model is dened by the time-varying probabilities of starting and ending a trip and is justied due to the uncertainty associated with the use of the vehicle. The model is tted to data...... collected from the actual utilization of a vehicle. Inhomogeneous Markov models imply a large number of parameters. The number of parameters in the proposed model is reduced using B-splines....

  12. 'Perfectly disordered' medium as a model for the description of micro-inhomogeneous mixtures

    International Nuclear Information System (INIS)

    Levin, V M; Markov, M G; Alvarez-Tostado, J M

    2004-01-01

    The correct description of the macroscopic (overall) physical properties of micro-inhomogeneous (composite) materials by micro-mechanics methods (the self-consistent schemes, for example) requires information about the microstructure and texture of such materials. Often, such information (of shapes inhomogeneities and peculiarities of their spatial distribution) is not available. In this paper, we suggest a method of calculation of the characteristics of micro-inhomogeneous materials that could be applied to a wide class of isotropic materials. This method assumes the absence of a closed order in the material microstructure (a 'perfectly disordered' (PD) medium). We used the PD approximation to predict the effective thermo- and poroelastic, electric and thermal properties of micro-inhomogeneous media. The expressions for the effective characteristics obtained by this method are always inside of the Hashin-Shtrikman universal bounds. For a two-phase material with fluid component, the effective bulk module satisfies Gassmann's relation for fluid-filled porous media and generalizes such a relation to inhomogeneous thermoelastic and poroelastic media. A comparison of the theoretical results with available experimental data shows a satisfactory coincidence even in the case of high contrast of the component properties. The simplicity of the numerical realization of the method makes it attractive for applications in the absence of detailed information about the material's microstructure

  13. Manipulation of incoherent and coherent spin ensembles in diluted magnetic semiconductors via ferromagnetic fringe fields; Manipulation inkohaerenter und kohaerenter Spinensembles in verduennt-magnetischen Halbleitern mittels ferromagnetischer Streufelder

    Energy Technology Data Exchange (ETDEWEB)

    Halm, Simon

    2009-05-19

    In this thesis it is demonstrated that fringe fields of nanostructured ferromagnets provide the opportunity to manipulate both incoherent and coherent spin ensembles in a dilute magnetic semiconductor (DMS). Fringe fields of Fe/Tb ferromagnets with a remanent out-of-plane magnetization induce a local magnetization in a (Zn,Cd,Mn)Se DMS. Due to the sp-d exchange interaction, optically generated electron-hole pairs align their spin along the DMS magnetization. One obtains a local, remanent spin polarization which was probed by spatially resolved, polarization sensitive photoluminescence spectroscopy. Fringe fields from in-plane magnetized Co ferromagnets allow to locally modify the precession frequency of the Manganese magnetic moments of the DMS in an external magnetic field. This was probed by time-resolved Kerr rotation technique. The inhomogeneity of the fringe field leads to a shortening of the ensemble decoherence time and to the effect of a time-dependent ensemble precession frequency. (orig.)

  14. Radiance intensity enhanced by thin inhomogeneous lossy films

    International Nuclear Information System (INIS)

    Ben-Abdallah, Philippe; Ni Bo

    2004-01-01

    Basically, the classical radiative transfer theory assumes that the coherent component of the radiation field is equal to zero and heuristic considerations about energy conservation are used in the phenomenological derivation of the RTE. Here a self-consistent theory is presented to investigate radiative transport in the presence of diffraction processes within thin inhomogeneous films. The problem of linear optics about the transport of scalar radiation within film is solved, a new definition of the radiance is introduced in agreement with earlier definitions and a corresponding radiative transfer equation is derived. The influence of spatial variations of the bulk properties on the propagating mode is described in detail. It is analytically predicted that, unlike homogeneous media, an inhomogeneous film can enhance the radiance intensity in spite of the diffraction and the local extinction. From a practical point of view, the results of this work should be useful to perform the optimal design for many thermoelectric devices such as the new generations of photovoltaiec cells

  15. A new type of exact arbitrarily inhomogeneous cosmology: evolution of deceleration in the flat homogeneous-on-average case

    Energy Technology Data Exchange (ETDEWEB)

    Hellaby, Charles, E-mail: Charles.Hellaby@uct.ac.za [Dept. of Maths. and Applied Maths, University of Cape Town, Rondebosch, 7701 (South Africa)

    2012-01-01

    A new method for constructing exact inhomogeneous universes is presented, that allows variation in 3 dimensions. The resulting spacetime may be statistically uniform on average, or have random, non-repeating variation. The construction utilises the Darmois junction conditions to join many different component spacetime regions. In the initial simple example given, the component parts are spatially flat and uniform, but much more general combinations should be possible. Further inhomogeneity may be added via swiss cheese vacuoles and inhomogeneous metrics. This model is used to explore the proposal, that observers are located in bound, non-expanding regions, while the universe is actually in the process of becoming void dominated, and thus its average expansion rate is increasing. The model confirms qualitatively that the faster expanding components come to dominate the average, and that inhomogeneity results in average parameters which evolve differently from those of any one component, but more realistic modelling of the effect will need this construction to be generalised.

  16. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  17. Effective permittivity of finite inhomogeneous objects

    NARCIS (Netherlands)

    Raghunathan, S.B.; Budko, N.V.

    2010-01-01

    A generalization of the S-parameter retrieval method for finite three-dimensional inhomogeneous objects under arbitrary illumination and observation conditions is presented. The effective permittivity of such objects may be rigorously defined as a solution of a nonlinear inverse scattering problem.

  18. No hair theorem for inhomogeneous cosmologies

    International Nuclear Information System (INIS)

    Jensen, L.G.; Stein-Schabes, J.A.

    1986-03-01

    We show that under very general conditions any inhomogeneous cosmological model with a positive cosmological constant, that can be described in a synchronous reference system will tend asymptotically in time towards the de Sitter solution. This is shown to be relevant in the context of inflationary models as it makes inflation very weakly dependent on initial conditions. 8 refs

  19. Critical behavior in inhomogeneous random graphs

    NARCIS (Netherlands)

    Hofstad, van der R.W.

    2013-01-01

    We study the critical behavior of inhomogeneous random graphs in the so-called rank-1 case, where edges are present independently but with unequal edge occupation probabilities. The edge occupation probabilities are moderated by vertex weights, and are such that the degree of vertex i is close in

  20. Critical behavior in inhomogeneous random graphs

    NARCIS (Netherlands)

    Hofstad, van der R.W.

    2009-01-01

    We study the critical behavior of inhomogeneous random graphs where edges are present independently but with unequal edge occupation probabilities. We show that the critical behavior depends sensitively on the properties of the asymptotic degrees. Indeed, when the proportion of vertices with degree

  1. Electron Beam interaction with an inhomogeneous

    Energy Technology Data Exchange (ETDEWEB)

    Zaki, N G; El-Shorbagy, Kh H [Plasma physics and Nuclear Fusion Dept. Nuclear Research Centre Atomic Energy Authority, Cairo, (Egypt)

    1997-12-31

    The linear and nonlinear interaction of an electron beam with an inhomogeneous semi bounded warm plasma is investigated. The amount of energy absorbed by the plasma is obtained. The formation of waves at double frequency at the inlet of the beam into the plasma is also considered.

  2. Inhomogeneous Pre-Big Bang String Cosmology

    OpenAIRE

    Veneziano, Gabriele

    1997-01-01

    An inhomogeneous version of pre--Big Bang cosmology emerges, within string theory, from quite generic initial conditions, provided they lie deeply inside the weak-coupling, low-curvature regime. Large-scale homogeneity, flatness, and isotropy appear naturally as late-time outcomes of such an evolution.

  3. MICROWAVE INTERACTIONS WITH INHOMOGENEOUS PARTIALLY IONIZED PLASMA

    Energy Technology Data Exchange (ETDEWEB)

    Kritz, A. H.

    1962-11-15

    Microwave interactions with inhomogeneous plasmas are often studied by employing a simplified electromagnetic approach, i.e., by representing the effects of the plasma by an effective dielectric coefficient. The problems and approximations associated with this procedure are discussed. The equation describing the microwave field in an inhomogeneous partially ionized plasma is derived, and the method that is applied to obtain the reflected, transmitted, and absorbed intensities in inhomogeneous plasmas is presented. The interactions of microwaves with plasmas having Gaussian electron density profiles are considered. The variation of collision frequency with position is usually neglected. In general, the assumption of constant collision frequency is not justified; e.g., for a highly ionized plasma, the electron density profile determines, in part, the profile of the electron-ion collision frequency. The effect of the variation of the collision frequency profile on the interaction of microwaves with inhomogeneous plasmas is studied in order to obtain an estimate of the degree of error that may result when constant collision frequency is assumed instead of a more realistic collision frequency profile. It is shown that the degree of error is of particular importance when microwave analysis is used as a plasma diagnostic. (auth)

  4. Optical inhomogeneity developing in flashlamp photolysis lasers

    Energy Technology Data Exchange (ETDEWEB)

    Alekhin, B V; Borovkov, V V; Brodskii, A Ya; Lazhintsev, B V; Nor-Arevian, V A; Sukhanov, L V

    1980-07-01

    The paper discusses the dynamics of optical inhomogenity developing in the active medium of a high-power flashlamp-pumped photolysis laser in inverse population storage, fast inversion suppression, and free-running lasing regimes. A chemical component of the refractive index was found in a C3F7I photolysis experiment, along with the anomalous growth of a gas refractive index.

  5. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  6. Nearly incompressible fluids: Hydrodynamics and large scale inhomogeneity

    International Nuclear Information System (INIS)

    Hunana, P.; Zank, G. P.; Shaikh, D.

    2006-01-01

    incompressible equations for higher order fluctuation components are derived and it is shown that they converge to the usual homogeneous nearly incompressible equations in the limit of no large-scale background. We use a time and length scale separation procedure to obtain wave equations for the acoustic pressure and velocity perturbations propagating on fast-time-short-wavelength scales. On these scales, the pseudosound relation, used to relate density and pressure fluctuations, is also obtained. In both cases, the speed of propagation (sound speed) depends on background variables and therefore varies spatially. For slow-time scales, a simple pseudosound relation cannot be obtained and density and pressure fluctuations are implicitly related through a relation which can be solved only numerically. Subject to some simplifications, a generalized inhomogeneous pseudosound relation is derived. With this paper, we extend the theory of nearly incompressible hydrodynamics to flows, including the solar wind, which include large-scale inhomogeneities (in this case radially symmetric and in equilibrium)

  7. The importance of the time scale in radiation detection exemplified by comparing conventional and avalache semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tove, P A; Cho, Z H; Huth, G C [California Univ., Los Angeles (USA). Lab. of Nuclear Medicine and Radiation Biology

    1976-02-01

    The profound importance of the time scale of a radiation detection process is discussed in an analysis of limitations in energy resolution and timing, with emphasis on semiconductor detectors used for X-ray detection. The basic event detection time involves stopping of the particle and creating a distribution of free electrons and holes containing all desired information (energy, time position) about the particle or quantum, in a time approximately equal to 10/sup -12/s. The process of extracting this information usually involves a much longer time because the signal is generated in the relatively slow process of charge collection, and further prolongation may be caused by signal processing required to depress noise for improving energy resolution. This is a common situation for conventional semiconductor detectors with external amplifiers where time constants of 10/sup -5/-10/sup -4/s may be optimum, primarily because of amplifier noise. A different situation applies to the avalanche detector where internal amplification helps in suppressing noise without expanding the time scale of detections, resulting in an optimum time of 10/sup -9/-10/sup -8/s. These two cases are illustrated by plotting energy resolution vs. time constant, for different magnitudes of the parallel and series type noise sources. The effects of the inherent energy spread due to statistips and spatial inhomogeneities are also discussed to illustrate the potential of these two approaches for energy and time determination. Two constructional approaches for avalanche detectors are briefly compared.

  8. Mössbauer studies of two-electron centers with negative correlation energy in crystalline and amorphous semiconductors

    International Nuclear Information System (INIS)

    Bordovsky, G. A.; Nemov, S. A.; Marchenko, A. V.; Seregin, P. P.

    2012-01-01

    The results of the study of donor U − -centers of tin and germanium in lead chalcogenides by Mössbauer emission spectroscopy are discussed. The published data regarding the identification of amphoteric U − -centers of tin in glassy binary arsenic and germanium chalcogenides using Mössbauer emission spectroscopy, and in multicomponent chalcogenide glasses using Mössbauer absorption spectroscopy are considered. Published data concerning the identification of two-atom U − -centers of copper in lattices of semimetal copper oxides by Mössbauer emission spectroscopy are analyzed. The published data on the detection of spatial inhomogeneity of the Bose-Einstein condensate in superconducting semiconductors and semimetal compounds, and on the existence of the correlation between the electron density in lattice sites and the superconducting transition temperature are presented. The principal possibility of using Mössbauer U − -centers as a tool for studying the Bose-Einstein condensation of electron pairs during the superconducting phase transition in semiconductors and semimetals is considered.

  9. Modeling inhomogeneous DNA replication kinetics.

    Directory of Open Access Journals (Sweden)

    Michel G Gauthier

    Full Text Available In eukaryotic organisms, DNA replication is initiated at a series of chromosomal locations called origins, where replication forks are assembled proceeding bidirectionally to replicate the genome. The distribution and firing rate of these origins, in conjunction with the velocity at which forks progress, dictate the program of the replication process. Previous attempts at modeling DNA replication in eukaryotes have focused on cases where the firing rate and the velocity of replication forks are homogeneous, or uniform, across the genome. However, it is now known that there are large variations in origin activity along the genome and variations in fork velocities can also take place. Here, we generalize previous approaches to modeling replication, to allow for arbitrary spatial variation of initiation rates and fork velocities. We derive rate equations for left- and right-moving forks and for replication probability over time that can be solved numerically to obtain the mean-field replication program. This method accurately reproduces the results of DNA replication simulation. We also successfully adapted our approach to the inverse problem of fitting measurements of DNA replication performed on single DNA molecules. Since such measurements are performed on specified portion of the genome, the examined DNA molecules may be replicated by forks that originate either within the studied molecule or outside of it. This problem was solved by using an effective flux of incoming replication forks at the model boundaries to represent the origin activity outside the studied region. Using this approach, we show that reliable inferences can be made about the replication of specific portions of the genome even if the amount of data that can be obtained from single-molecule experiments is generally limited.

  10. Axi-symmetric analysis of vertically inhomogeneous elastic multilayered systems

    CSIR Research Space (South Africa)

    Maina, JW

    2009-06-01

    Full Text Available primary resilient responses are investigated by way of worked examples of hypothetical three-layer system, which was analyzed by considering homogenous and inhomogeneous material properties in each of the three layers. Effect of a inhomogeneity parameter...

  11. Full-wave solution of short impulses in inhomogeneous plasma

    Indian Academy of Sciences (India)

    ... in arbitrarily inhomogeneous media will be presented on a fundamentally new, ... The general problem of wave propagation of monochromatic signals in inhomogeneous media was enlightened in [1]. ... Pramana – Journal of Physics | News.

  12. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  13. Two-point correlation functions in inhomogeneous and anisotropic cosmologies

    International Nuclear Information System (INIS)

    Marcori, Oton H.; Pereira, Thiago S.

    2017-01-01

    Two-point correlation functions are ubiquitous tools of modern cosmology, appearing in disparate topics ranging from cosmological inflation to late-time astrophysics. When the background spacetime is maximally symmetric, invariance arguments can be used to fix the functional dependence of this function as the invariant distance between any two points. In this paper we introduce a novel formalism which fixes this functional dependence directly from the isometries of the background metric, thus allowing one to quickly assess the overall features of Gaussian correlators without resorting to the full machinery of perturbation theory. As an application we construct the CMB temperature correlation function in one inhomogeneous (namely, an off-center LTB model) and two spatially flat and anisotropic (Bianchi) universes, and derive their covariance matrices in the limit of almost Friedmannian symmetry. We show how the method can be extended to arbitrary N -point correlation functions and illustrate its use by constructing three-point correlation functions in some simple geometries.

  14. Study of plasma-maser instability in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Singh, Mahinder

    2006-01-01

    The plasma-maser, an interesting nonlinear process in plasmas, is an effective means of energy up-conversion in frequency from low-frequency turbulence to a high-frequency wave. A theoretical study is made of the amplification mechanism of an electrostatic Bernstein mode wave in presence of Langmuir wave turbulence in a magnetized inhomogeneous plasma on the basis of a plasma-maser interaction. It is shown that a test high-frequency electrostatic Bernstein mode wave is unstable in the presence of low-frequency Langmuir wave turbulence. The growth rate of a test high-frequency Bernstein mode wave is calculated with the involvement of a spatial density gradient parameter. A comparative study on the role of density gradient in the generation of the Bernstein mode on the basis of the plasma-maser effect is presented

  15. Superconductivity in an Inhomogeneous Bundle of Metallic and Semiconducting Nanotubes

    Directory of Open Access Journals (Sweden)

    Ilya Grigorenko

    2013-01-01

    Full Text Available Using Bogoliubov-de Gennes formalism for inhomogeneous systems, we have studied superconducting properties of a bundle of packed carbon nanotubes, making a triangular lattice in the bundle's transverse cross-section. The bundle consists of a mixture of metallic and doped semiconducting nanotubes, which have different critical transition temperatures. We investigate how a spatially averaged superconducting order parameter and the critical transition temperature depend on the fraction of the doped semiconducting carbon nanotubes in the bundle. Our simulations suggest that the superconductivity in the bundle will be suppressed when the fraction of the doped semiconducting carbon nanotubes will be less than 0.5, which is the percolation threshold for a two-dimensional triangular lattice.

  16. Two-point correlation functions in inhomogeneous and anisotropic cosmologies

    Energy Technology Data Exchange (ETDEWEB)

    Marcori, Oton H.; Pereira, Thiago S., E-mail: otonhm@hotmail.com, E-mail: tspereira@uel.br [Departamento de Física, Universidade Estadual de Londrina, 86057-970, Londrina PR (Brazil)

    2017-02-01

    Two-point correlation functions are ubiquitous tools of modern cosmology, appearing in disparate topics ranging from cosmological inflation to late-time astrophysics. When the background spacetime is maximally symmetric, invariance arguments can be used to fix the functional dependence of this function as the invariant distance between any two points. In this paper we introduce a novel formalism which fixes this functional dependence directly from the isometries of the background metric, thus allowing one to quickly assess the overall features of Gaussian correlators without resorting to the full machinery of perturbation theory. As an application we construct the CMB temperature correlation function in one inhomogeneous (namely, an off-center LTB model) and two spatially flat and anisotropic (Bianchi) universes, and derive their covariance matrices in the limit of almost Friedmannian symmetry. We show how the method can be extended to arbitrary N -point correlation functions and illustrate its use by constructing three-point correlation functions in some simple geometries.

  17. Metrical theorems on systems of small inhomogeneous linear forms

    DEFF Research Database (Denmark)

    Hussain, Mumtaz; Kristensen, Simon

    In this paper we establish complete Khintchine-Groshev and Schmidt type theorems for inhomogeneous small linear forms in the so-called doubly metric case, in which the inhomogeneous parameter is not fixed.......In this paper we establish complete Khintchine-Groshev and Schmidt type theorems for inhomogeneous small linear forms in the so-called doubly metric case, in which the inhomogeneous parameter is not fixed....

  18. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  19. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  20. Propagation of strong electromagnetic beams in inhomogeneous plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A; Massaglia, S [Consiglio Nazionale delle Ricerche, Turin (Italy). Lab. di Cosmo-Geofisica; Turin Univ. (Italy). Ist. di Fisica Generale)

    1980-09-01

    We study some simple aspects of nonlinear propagation of relativistically strong electromagnetic beams in inhomogeneous plasmas, especially in connection with effects of beam self-trapping in extended extragalactic radio sources. The two effects of (i) long scale longitudinal and radial inhomogeneities inherent to the plasma and (ii) radial inhomogeneities produced by the ponderomotive force of the beam itself are investigated.

  1. Dynamics of an inhomogeneous anisotropic antiferromagnetic spin chain

    International Nuclear Information System (INIS)

    Daniel, M.; Amuda, R.

    1994-11-01

    We investigate the nonlinear spin excitations in the two sublattice model of a one dimensional classical continuum Heisenberg inhomogeneous antiferromagnetic spin chain. The dynamics of the inhomogeneous chain reduces to that of its homogeneous counterpart when the inhomogeneity assumes a particular form. Apart from the usual twists and pulses, we obtain some planar configurations representing the nonlinear dynamics of spins. (author). 12 refs

  2. Inhomogeneity Based Characterization of Distribution Patterns on the Plasma Membrane.

    Directory of Open Access Journals (Sweden)

    Laura Paparelli

    2016-09-01

    Full Text Available Cell surface protein and lipid molecules are organized in various patterns: randomly, along gradients, or clustered when segregated into discrete micro- and nano-domains. Their distribution is tightly coupled to events such as polarization, endocytosis, and intracellular signaling, but challenging to quantify using traditional techniques. Here we present a novel approach to quantify the distribution of plasma membrane proteins and lipids. This approach describes spatial patterns in degrees of inhomogeneity and incorporates an intensity-based correction to analyze images with a wide range of resolutions; we have termed it Quantitative Analysis of the Spatial distributions in Images using Mosaic segmentation and Dual parameter Optimization in Histograms (QuASIMoDOH. We tested its applicability using simulated microscopy images and images acquired by widefield microscopy, total internal reflection microscopy, structured illumination microscopy, and photoactivated localization microscopy. We validated QuASIMoDOH, successfully quantifying the distribution of protein and lipid molecules detected with several labeling techniques, in different cell model systems. We also used this method to characterize the reorganization of cell surface lipids in response to disrupted endosomal trafficking and to detect dynamic changes in the global and local organization of epidermal growth factor receptors across the cell surface. Our findings demonstrate that QuASIMoDOH can be used to assess protein and lipid patterns, quantifying distribution changes and spatial reorganization at the cell surface. An ImageJ/Fiji plugin of this analysis tool is provided.

  3. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  4. Guided wave mode selection for inhomogeneous elastic waveguides using frequency domain finite element approach.

    Science.gov (United States)

    Chillara, Vamshi Krishna; Ren, Baiyang; Lissenden, Cliff J

    2016-04-01

    This article describes the use of the frequency domain finite element (FDFE) technique for guided wave mode selection in inhomogeneous waveguides. Problems with Rayleigh-Lamb and Shear-Horizontal mode excitation in isotropic homogeneous plates are first studied to demonstrate the application of the approach. Then, two specific cases of inhomogeneous waveguides are studied using FDFE. Finally, an example of guided wave mode selection for inspecting disbonds in composites is presented. Identification of sensitive and insensitive modes for defect inspection is demonstrated. As the discretization parameters affect the accuracy of the results obtained from FDFE, effect of spatial discretization and the length of the domain used for the spatial fast Fourier transform are studied. Some recommendations with regard to the choice of the above parameters are provided. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. Entanglement hamiltonian and entanglement contour in inhomogeneous 1D critical systems

    Science.gov (United States)

    Tonni, Erik; Rodríguez-Laguna, Javier; Sierra, Germán

    2018-04-01

    Inhomogeneous quantum critical systems in one spatial dimension have been studied by using conformal field theory in static curved backgrounds. Two interesting examples are the free fermion gas in the harmonic trap and the inhomogeneous XX spin chain called rainbow chain. For conformal field theories defined on static curved spacetimes characterised by a metric which is Weyl equivalent to the flat metric, with the Weyl factor depending only on the spatial coordinate, we study the entanglement hamiltonian and the entanglement spectrum of an interval adjacent to the boundary of a segment where the same boundary condition is imposed at the endpoints. A contour function for the entanglement entropies corresponding to this configuration is also considered, being closely related to the entanglement hamiltonian. The analytic expressions obtained by considering the curved spacetime which characterises the rainbow model have been checked against numerical data for the rainbow chain, finding an excellent agreement.

  6. Electron dynamics in inhomogeneous magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Nogaret, Alain, E-mail: A.R.Nogaret@bath.ac.u [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

    2010-06-30

    This review explores the dynamics of two-dimensional electrons in magnetic potentials that vary on scales smaller than the mean free path. The physics of microscopically inhomogeneous magnetic fields relates to important fundamental problems in the fractional quantum Hall effect, superconductivity, spintronics and graphene physics and spins out promising applications which will be described here. After introducing the initial work done on electron localization in random magnetic fields, the experimental methods for fabricating magnetic potentials are presented. Drift-diffusion phenomena are then described, which include commensurability oscillations, magnetic channelling, resistance resonance effects and magnetic dots. We then review quantum phenomena in magnetic potentials including magnetic quantum wires, magnetic minibands in superlattices, rectification by snake states, quantum tunnelling and Klein tunnelling. The third part is devoted to spintronics in inhomogeneous magnetic fields. This covers spin filtering by magnetic field gradients and circular magnetic fields, electrically induced spin resonance, spin resonance fluorescence and coherent spin manipulation. (topical review)

  7. A nonquasiclassical description of inhomogeneous superconductors

    International Nuclear Information System (INIS)

    Zaikin, A.D.; Panyukov, S.V.

    1988-01-01

    Exact microscopic equations are derived that make it possible to describe inhomogeneous superconductors when the quasi-classical approach is not suitable. These equations are simpler than the Gorkov equations. The authors generalize the derived equations for describing the nonequilibrium states of inhomogeneous superconductors. It is demonstrated that the derived equations (including the case of a nonequilibrium quasi particle distribution function) may be written in the form of linear differential equations for the simultaneous wave function μ, ν. The quasi-classical limit of such equations is examined. Effective boundary conditions are derived for the μ, ν functions that allow description of superconductors with a sharp change in parameters within the scope of the quasi-classical approach

  8. Inhomogeneities from quantum collapse scheme without inflation

    Energy Technology Data Exchange (ETDEWEB)

    Bengochea, Gabriel R., E-mail: gabriel@iafe.uba.ar [Instituto de Astronomía y Física del Espacio (IAFE), UBA-CONICET, CC 67, Suc. 28, 1428 Buenos Aires (Argentina); Cañate, Pedro, E-mail: pedro.canate@nucleares.unam.mx [Instituto de Ciencias Nucleares, UNAM, México D.F. 04510, México (Mexico); Sudarsky, Daniel, E-mail: sudarsky@nucleares.unam.mx [Instituto de Ciencias Nucleares, UNAM, México D.F. 04510, México (Mexico)

    2015-04-09

    In this work, we consider the problem of the emergence of seeds of cosmic structure in the framework of the non-inflationary model proposed by Hollands and Wald. In particular, we consider a modification to that proposal designed to account for breaking the symmetries of the initial quantum state, leading to the generation of the primordial inhomogeneities. This new ingredient is described in terms of a spontaneous reduction of the wave function. We investigate under which conditions one can recover an essentially scale free spectrum of primordial inhomogeneities, and which are the dominant deviations that arise in the model as a consequence of the introduction of the collapse of the quantum state into that scenario.

  9. Equilibrium and stability in strongly inhomogeneous plasmas

    International Nuclear Information System (INIS)

    Mynick, H.E.

    1978-10-01

    The equilibrium of strongly inhomogeneous, collisionless, slab plasmas, is studied using a generalized version of a formalism previously developed, which permits the generation of self-consistent equilibria, for plasmas with arbitrary magnetic shear, and variation of magnetic field strength. A systematic procedure is developed for deriving the form of the guiding-center Hamiltonian K, for finite eta, in an axisymmetric geometry. In the process of obtaining K, an expression for the first adiabatic invariant (the gyroaction) is obtained, which generalizes the usual expression 1/2 mv/sub perpendicular/ 2 /Ω/sub c/ (Ω/sub c/ = eB/mc), to finite eta and magnetic shear. A formalism is developed for the study of the stability of strongly-inhomogeneous, magnetized slab plasmas; it is then applied to the ion-drift-cyclotron instability

  10. Primordial inhomogeneities from massive defects during inflation

    Energy Technology Data Exchange (ETDEWEB)

    Firouzjahi, Hassan; Karami, Asieh; Rostami, Tahereh, E-mail: firouz@ipm.ir, E-mail: karami@ipm.ir, E-mail: t.rostami@ipm.ir [School of Astronomy, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of)

    2016-10-01

    We consider the imprints of local massive defects, such as a black hole or a massive monopole, during inflation. The massive defect breaks the background homogeneity. We consider the limit that the physical Schwarzschild radius of the defect is much smaller than the inflationary Hubble radius so a perturbative analysis is allowed. The inhomogeneities induced in scalar and gravitational wave power spectrum are calculated. We obtain the amplitudes of dipole, quadrupole and octupole anisotropies in curvature perturbation power spectrum and identify the relative configuration of the defect to CMB sphere in which large observable dipole asymmetry can be generated. We observe a curious reflection symmetry in which the configuration where the defect is inside the CMB comoving sphere has the same inhomogeneous variance as its mirror configuration where the defect is outside the CMB sphere.

  11. Cosmic acceleration driven by mirage inhomogeneities

    Energy Technology Data Exchange (ETDEWEB)

    Galfard, Christophe [DAMTP, Centre for Mathematical Sciences, University of Cambridge, Wilberforce road, Cambridge CB3 0WA (United Kingdom); Germani, Cristiano [DAMTP, Centre for Mathematical Sciences, University of Cambridge, Wilberforce road, Cambridge CB3 0WA (United Kingdom); Kehagias, Alex [Physics Division, National Technical University of Athens, 15780 Zografou Campus, Athens (Greece)

    2006-03-21

    A cosmological model based on an inhomogeneous D3-brane moving in an AdS{sub 5} x S{sub 5} bulk is introduced. Although there are no special points in the bulk, the brane universe has a centre and is isotropic around it. The model has an accelerating expansion and its effective cosmological constant is inversely proportional to the distance from the centre, giving a possible geometrical origin for the smallness of a present-day cosmological constant. Besides, if our model is considered as an alternative of early-time acceleration, it is shown that the early stage accelerating phase ends in a dust-dominated FRW homogeneous universe. Mirage-driven acceleration thus provides a dark matter component for the brane universe final state. We finally show that the model fulfils the current constraints on inhomogeneities.

  12. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  13. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  14. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  15. Radiation transport in statistically inhomogeneous rocks

    International Nuclear Information System (INIS)

    Lukhminskij, B.E.

    1975-01-01

    A study has been made of radiation transfer in statistically inhomogeneous rocks. Account has been taken of the statistical character of rock composition through randomization of density. Formulas are summarized for sigma-distribution, homogeneous density, the Simpson and Cauchy distributions. Consideration is given to the statistics of mean square ranges in a medium, simulated by the jump Markov random function. A quantitative criterion of rock heterogeneity is proposed

  16. Diffusion MRI: Mitigation of Magnetic Field Inhomogeneities

    Czech Academy of Sciences Publication Activity Database

    Marcon, P.; Bartušek, Karel; Dokoupil, Zdeněk; Gescheidtová, E.

    2012-01-01

    Roč. 12, č. 5 (2012), s. 205-212 ISSN 1335-8871 R&D Projects: GA MŠk ED0017/01/01; GA ČR GAP102/11/0318; GA ČR GAP102/12/1104 Institutional support: RVO:68081731 Keywords : correction * diffusion * inhomogeneity * eddy currents * magnetic resonance Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.233, year: 2012

  17. Cliques in dense inhomogenous random graphs

    Czech Academy of Sciences Publication Activity Database

    Doležal, Martin; Hladký, Jan; Máthé, A.

    2017-01-01

    Roč. 51, č. 2 (2017), s. 275-314 ISSN 1042-9832 R&D Projects: GA ČR GA16-07378S EU Projects: European Commission(XE) 628974 - PAECIDM Institutional support: RVO:67985840 Keywords : inhomogeneous random graphs * clique number Subject RIV: BA - General Mathematics OBOR OECD: Pure mathematics Impact factor: 1.243, year: 2016 http://onlinelibrary.wiley.com/doi/10.1002/ rsa .20715/abstract

  18. Controlling Charged Particles with Inhomogeneous Electrostatic Fields

    Science.gov (United States)

    Herrero, Federico A. (Inventor)

    2016-01-01

    An energy analyzer for a charged-particle spectrometer may include a top deflection plate and a bottom deflection plate. The top and bottom deflection plates may be non-symmetric and configured to generate an inhomogeneous electrostatic field when a voltage is applied to one of the top or bottom deflection plates. In some instances, the top and bottom deflection plates may be L-shaped deflection plates.

  19. Cliques in dense inhomogenous random graphs

    Czech Academy of Sciences Publication Activity Database

    Doležal, Martin; Hladký, Jan; Máthé, A.

    2017-01-01

    Roč. 51, č. 2 (2017), s. 275-314 ISSN 1042-9832 R&D Projects: GA ČR GA16-07378S EU Projects: European Commission(XE) 628974 - PAECIDM Institutional support: RVO:67985840 Keywords : inhomogeneous random graphs * clique number Subject RIV: BA - General Mathematics OBOR OECD: Pure mathematics Impact factor: 1.243, year: 2016 http://onlinelibrary.wiley.com/doi/10.1002/rsa.20715/abstract

  20. Integral equation for inhomogeneous condensed bosons generalizing the Gross-Pitaevskii differential equation

    International Nuclear Information System (INIS)

    Angilella, G.G.N.; Pucci, R.; March, N.H.

    2004-01-01

    We give here the derivation of a Gross-Pitaevskii-type equation for inhomogeneous condensed bosons. Instead of the original Gross-Pitaevskii differential equation, we obtain an integral equation that implies less restrictive assumptions than are made in the very recent study of Pieri and Strinati [Phys. Rev. Lett. 91, 030401 (2003)]. In particular, the Thomas-Fermi approximation and the restriction to small spatial variations of the order parameter invoked in their study are avoided

  1. Global a priori estimates for the inhomogeneous Landau equation with moderately soft potentials

    Science.gov (United States)

    Cameron, Stephen; Silvestre, Luis; Snelson, Stanley

    2018-05-01

    We establish a priori upper bounds for solutions to the spatially inhomogeneous Landau equation in the case of moderately soft potentials, with arbitrary initial data, under the assumption that mass, energy and entropy densities stay under control. Our pointwise estimates decay polynomially in the velocity variable. We also show that if the initial data satisfies a Gaussian upper bound, this bound is propagated for all positive times.

  2. Fate of classical tensor inhomogeneities in pre-big-bang string cosmology

    International Nuclear Information System (INIS)

    Buonanno, Alessandra; Damour, Thibault

    2001-01-01

    In pre-big-bang string cosmology one uses a phase of dilaton-driven inflation to stretch an initial (microscopic) spatial patch to the (much larger) size of the big-bang fireball. We show that the dilaton-driven inflationary phase does not naturally iron out the initial classical tensor inhomogeneities unless the initial value of the string coupling is smaller than g in ∼ -35

  3. Process Modeling With Inhomogeneous Thin Films

    Science.gov (United States)

    Machorro, R.; Macleod, H. A.; Jacobson, M. R.

    1986-12-01

    Designers of optical multilayer coatings commonly assume that the individual layers will be ideally homogeneous and isotropic. In practice, it is very difficult to control the conditions involved in the complex evaporation process sufficiently to produce such ideal films. Clearly, changes in process parameters, such as evaporation rate, chamber pressure, and substrate temperature, affect the microstructure of the growing film, frequently producing inhomogeneity in structure or composition. In many cases, these effects are interdependent, further complicating the situation. However, this process can be simulated on powerful, interactive, and accessible microcomputers. In this work, we present such a model and apply it to estimate the influence of an inhomogeneous layer on multilayer performance. Presently, the program simulates film growth, thermal expansion and contraction, and thickness monitoring procedures, and includes the effects of uncertainty in these parameters or noise. Although the model is being developed to cover very general cases, we restrict the present discussion to isotropic and nondispersive quarterwave layers to understand the particular effects of inhomogeneity. We studied several coating designs and related results and tolerances to variations in evaporation conditions. The model is composed of several modular subprograms, is written in Fortran, and is executed on an IBM-PC with 640 K of memory. The results can be presented in graphic form on a monochrome monitor. We are currently installing and implementing color capability to improve the clarity of the multidimensional output.

  4. Inhomogeneities and the Modeling of Radio Supernovae

    Energy Technology Data Exchange (ETDEWEB)

    Björnsson, C.-I.; Keshavarzi, S. T., E-mail: bjornsson@astro.su.se [Department of Astronomy, AlbaNova University Center, Stockholm University, SE–106 91 Stockholm (Sweden)

    2017-05-20

    Observations of radio supernovae (SNe) often exhibit characteristics not readily accounted for by a homogeneous, spherically symmetric synchrotron model; e.g., flat-topped spectra/light curves. It is shown that many of these deviations from the standard model can be attributed to an inhomogeneous source structure. When inhomogeneities are present, the deduced radius of the source and, hence, the shock velocity, is sensitive to the details of the modeling. As the inhomogeneities are likely to result from the same mechanism that amplify the magnetic field, a comparison between observations and the detailed numerical simulations now under way may prove mutually beneficial. It is argued that the radio emission in Type Ib/c SNe has a small volume filling factor and comes from a narrow region associated with the forward shock, while the radio emission region in SN 1993J (Type IIb) is determined by the extent of the Rayleigh–Taylor instability emanating from the contact discontinuity. Attention is also drawn to the similarities between radio SNe and the structural properties of SN remnants.

  5. INHOMOGENEOUS NEARLY INCOMPRESSIBLE DESCRIPTION OF MAGNETOHYDRODYNAMIC TURBULENCE

    International Nuclear Information System (INIS)

    Hunana, P.; Zank, G. P.

    2010-01-01

    The nearly incompressible theory of magnetohydrodynamics (MHD) is formulated in the presence of a static large-scale inhomogeneous background. The theory is an inhomogeneous generalization of the homogeneous nearly incompressible MHD description of Zank and Matthaeus and a polytropic equation of state is assumed. The theory is primarily developed to describe solar wind turbulence where the assumption of a composition of two-dimensional (2D) and slab turbulence with the dominance of the 2D component has been used for some time. It was however unclear, if in the presence of a large-scale inhomogeneous background, the dominant component will also be mainly 2D and we consider three distinct MHD regimes for the plasma beta β > 1. For regimes appropriate to the solar wind (β 2 s δp is not valid for the leading-order O(M) density fluctuations, and therefore in observational studies, the density fluctuations should not be analyzed through the pressure fluctuations. The pseudosound relation is valid only for higher order O(M 2 ) density fluctuations, and then only for short-length scales and fast timescales. The spectrum of the leading-order density fluctuations should be modeled as k -5/3 in the inertial range, followed by a Bessel function solution K ν (k), where for stationary turbulence ν = 1, in the viscous-convective and diffusion range. Other implications for solar wind turbulence with an emphasis on the evolution of density fluctuations are also discussed.

  6. Rotational inhomogeneities from pre-big bang?

    International Nuclear Information System (INIS)

    Giovannini, Massimo

    2005-01-01

    The evolution of the rotational inhomogeneities is investigated in the specific framework of four-dimensional pre-big bang models. While minimal (dilaton-driven) scenarios do not lead to rotational fluctuations, in the case of non-minimal (string-driven) models, fluid sources are present in the pre-big bang phase. The rotational modes of the geometry, coupled to the divergenceless part of the velocity field, can then be amplified depending upon the value of the barotropic index of the perfect fluids. In the light of a possible production of rotational inhomogeneities, solutions describing the coupled evolution of the dilaton field and of the fluid sources are scrutinized in both the string and Einstein frames. In semi-realistic scenarios, where the curvature divergences are regularized by means of a non-local dilaton potential, the rotational inhomogeneities are amplified during the pre-big bang phase but they decay later on. Similar analyses can also be performed when a contraction occurs directly in the string frame metric

  7. Inhomogeneous neutrino degeneracy and big bang nucleosynthesis

    International Nuclear Information System (INIS)

    Whitmire, Scott E.; Scherrer, Robert J.

    2000-01-01

    We examine big bang nucleosynthesis (BBN) in the case of inhomogeneous neutrino degeneracy, in the limit where the fluctuations are sufficiently small on large length scales that the present-day element abundances are homogeneous. We consider two representative cases: degeneracy of the electron neutrino alone and equal chemical potentials for all three neutrinos. We use a linear programming method to constrain an arbitrary distribution of the chemical potentials. For the current set of (highly restrictive) limits on the primordial element abundances, homogeneous neutrino degeneracy barely changes the allowed range of the baryon-to-photon ratio η. Inhomogeneous degeneracy allows for little change in the lower bound on η, but the upper bound in this case can be as large as η=1.1x10 -8 (only ν e degeneracy) or η=1.0x10 -9 (equal degeneracies for all three neutrinos). For the case of inhomogeneous neutrino degeneracy, we show that there is no BBN upper bound on the neutrino energy density, which is bounded in this case only by limits from structure formation and the cosmic microwave background. (c) 2000 The American Physical Society

  8. Rotational inhomogeneities from pre-big bang?

    Energy Technology Data Exchange (ETDEWEB)

    Giovannini, Massimo [Department of Physics, Theory Division, CERN, 1211 Geneva 23 (Switzerland)

    2005-01-21

    The evolution of the rotational inhomogeneities is investigated in the specific framework of four-dimensional pre-big bang models. While minimal (dilaton-driven) scenarios do not lead to rotational fluctuations, in the case of non-minimal (string-driven) models, fluid sources are present in the pre-big bang phase. The rotational modes of the geometry, coupled to the divergenceless part of the velocity field, can then be amplified depending upon the value of the barotropic index of the perfect fluids. In the light of a possible production of rotational inhomogeneities, solutions describing the coupled evolution of the dilaton field and of the fluid sources are scrutinized in both the string and Einstein frames. In semi-realistic scenarios, where the curvature divergences are regularized by means of a non-local dilaton potential, the rotational inhomogeneities are amplified during the pre-big bang phase but they decay later on. Similar analyses can also be performed when a contraction occurs directly in the string frame metric.

  9. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  10. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  11. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  12. Superconductivity in compensated and uncompensated semiconductors

    Directory of Open Access Journals (Sweden)

    Youichi Yanase and Naoyuki Yorozu

    2008-01-01

    Full Text Available We investigate the localization and superconductivity in heavily doped semiconductors. The crossover from the superconductivity in the host band to that in the impurity band is described on the basis of the disordered three-dimensional attractive Hubbard model for binary alloys. The microscopic inhomogeneity and the thermal superconducting fluctuation are taken into account using the self-consistent 1-loop order theory. The superconductor-insulator transition accompanies the crossover from the host band to the impurity band. We point out an enhancement of the critical temperature Tc around the crossover. Further localization of electron wave functions leads to the localization of Cooper pairs and induces the pseudogap. We find that both the doping compensation by additional donors and the carrier increase by additional acceptors suppress the superconductivity. A theoretical interpretation is proposed for the superconductivity in the boron-doped diamond, SiC, and Si.

  13. Laser Meter of Atmospheric Inhomogeneity Properties in UV Spectral Range

    Directory of Open Access Journals (Sweden)

    S. E. Ivanov

    2015-01-01

    Full Text Available Development of laser systems designed to operate in conditions of the terrestrial atmosphere demands reliable information about the atmosphere condition. The aerosol lidars for operational monitoring of the atmosphere allow us to define remotely characteristics of atmospheric aerosol and cloudy formations in the atmosphere.Today the majority of aerosol lidars run in the visible range. However, in terms of safety (first of all to eyes also ultra-violet (UF range is of interest. A range of the wavelengths of the harmful effect on the eye retina is from 0.38 to 1.4 mμ. Laser radiation with the wavelengths less than 0.38 mμ and over 1.4 mμ influences the anterior ambient of an eye and is safer, than laser radiation with the wavelengths of 0.38 – 1.4 mμ.The paper describes a laser meter to measure characteristics of atmospheric inhomogeneity propertis in UF spectral range at the wavelength of 0.355 mμ.As a radiation source, the meter uses a semiconductor-pumped pulse solid-state Nd:YAG laser. As a receiving lens, Kassegren's scheme-implemented mirror lens with a socket to connect optical fibre is used in the laser meter. Radiation from the receiving lens is transported through the optical fibre to the optical block. The optical block provides spectral selection of useful signal and conversion of optical radiation into electric signal.To ensure a possibility for alignment of the optical axes of receiving lens and laser radiator the lens is set on the alignment platform that enables changing lens inclination and turn with respect to the laser.The software of the laser meter model is developed in the NI LabVIEW 2012 graphic programming environment.The paper gives the following examples: a typical laser echo signal, which is back scattered by the atmosphere and spatiotemporal distribution of variation coefficient of the volumetric factor of the back scattered atmosphere. Results of multi-day measurements show that an extent of the recorded aerosol

  14. On Electron Hole Evolution in Inhomogeneous Plasmas

    Science.gov (United States)

    Kuzichev, I.; Vasko, I.; Agapitov, O. V.; Mozer, F.; Artemyev, A.

    2017-12-01

    Electron holes (EHs) are the stationary localized non-linear structures in phase space existing due to an electron population trapped within EH electrostatic potential. EHs were found to be a common phenomenon in the Earth's magnetosphere. Such structures were observed in reconnecting current sheets, injection fronts in the outer radiation belt, and in many other situations. EHs usually propagate along magnetic field lines with velocities about electron thermal velocity, are localized on the scale of about 4-10 Debye lengths, and have the field amplitude up to hundreds of mV/m. Generation of these structures, evolution, and their role in relaxation of instabilities and energy dissipation, particle energization, supporting large-scale potential drops is under active investigation. In this report, we present the results of 1.5D gyrokinetic Vlasov-Maxwell simulations of the EH evolution in plasmas with inhomogeneous magnetic field and inhomogeneous density. Our calculations show that the inhomogeneity has a critical effect on the EH dynamics. EHs propagating into stronger (weaker) magnetic field are decelerated (accelerated) with deceleration (acceleration) rate dependent on the magnetic field gradient. During the deceleration of EH, the potential drop (weak double layer) along EH is generated. Such a potential drop might be experimentally observable even for single EH in the reconnecting current sheets. The same holds for the propagation in the plasma with inhomogeneous density. For some parameters of the system, the deceleration results in the turning of the hole. The interesting feature of this process is that the turning point depends only on the EH parameters, being independent of the average inhomogeneity scale. Our calculations also demonstrate the significant difference between "quasi-particle" concept and real evolution of the hole. Indeed, the EH is accelerated (decelerated) faster than it follows from a quasi-particle energy conservation law. It indicates

  15. Spatial Variation of Magnetotelluric Field Components in simple 2D ...

    African Journals Online (AJOL)

    The E-polarization mode electromagnetic field components were computed for different aspect ratios of the inhomogeneity and for different frequencies of the incident waves. The results show that as aspect ratio of the inhomogeneity is reduced the spatial variation of the electric field component Ex is reduced and that of the ...

  16. QCD under extreme conditions. Inhomogeneous condensation

    Energy Technology Data Exchange (ETDEWEB)

    Heinz, Achim

    2014-10-15

    Almost 40 years after the first publication on the phase diagram of quantum chromodynamics (QCD) big progress has been made but many questions are still open. This work covers several aspects of low-energy QCD and introduces advanced methods to calculate selected parts of the QCD phase diagram. Spontaneous chiral symmetry breaking as well as its restoration is a major aspect of QCD. Two effective models, the Nambu-Jona-Lasinio (NJL) model and the linear σ-model, are widely used to describe the QCD chiral phase transition. We study the large-N{sub c} behavior of the critical temperature T{sub c} for chiral symmetry restoration in the framework of both models. While in the NJL model T{sub c} is independent of N{sub c} (and in agreement with the expected QCD scaling), the scaling behavior in the linear σ-model reads T{sub c} ∝ N{sup 1/2}{sub c}. However, this mismatch can be corrected: phenomenologically motivated temperature-dependent parameters or the extension with the Polyakov-loop renders the scaling in the linear σ-model compatible with the QCD scaling. The requirement that the chiral condensate which is the order parameter of the chiral symmetry is constant in space is too restrictive. Recent studies on inhomogeneous chiral condensation in cold, dense quark matter suggest a rich crystalline structure. These studies feature models with quark degrees of freedom. In this thesis we investigate the formation of the chiral density wave (CDW) in the framework of the so-called extended linear sigma model (eLSM) at high densities and zero temperature. The eLSM is a modern development of the linear σ-model which contains scalar, pseudoscalar, vector, as well as axial-vector mesons, and in addition, a light tetraquark state. The nucleon and its chiral partner are introduced as parity doublets in the mirror assignment. The model describes successfully the vacuum phenomenology and nuclear matter ground-state properties. As a result we find that an inhomogeneous phase

  17. Scattering and emission from inhomogeneous vegetation canopy and alien target beneath by using three-dimensional vector radiative transfer (3D-VRT) equation

    International Nuclear Information System (INIS)

    Jin Yaqiu; Liang Zichang

    2005-01-01

    To solve the 3D-VRT equation for the model of spatially inhomogeneous scatter media, the finite enclosure of the scatter media is geometrically divided, in both vertical z and transversal (x,y) directions, to form very thin multi-boxes. The zeroth order emission, first-order Mueller matrix of each thin box and an iterative approach of high-order radiative transfer are applied to derive high-order scattering and emission of whole inhomogeneous scatter media. Numerical results of polarized brightness temperature at microwave frequency and under different radiometer resolutions from inhomogeneous scatter model such as vegetation canopy and alien target beneath canopy are simulated and discussed

  18. Inhomogeneous chiral symmetry breaking in isospin-asymmetric strong-interaction matter

    Energy Technology Data Exchange (ETDEWEB)

    Nowakowski, Daniel

    2017-07-01

    In this thesis we investigate the effects of an isospin asymmetry on inhomogeneous chiral symmetry breaking phases, which are characterized by spatially modulated quarkantiquark condensates. In order to determine the relevance of such phases for the phase diagram of strong-interaction matter, a two-flavor Nambu-Jona-Lasinio model is used to study the properties of the ground state of the system. Confirming the presence of inhomogeneous chiral symmetry breaking in isospin-asymmetric matter for a simple Chiral Density Wave, we generalize the modulation of the quark-antiquark pairs to more complicated shapes and study the effects of different degrees of flavor-mixing on the inhomogeneous phase at non-zero isospin asymmetry. Then, we investigate the occurrence of crystalline chiral symmetry breaking phases in charge-neutral matter, from which we determine the influence of crystalline phases on a quark star by calculating mass-radius sequences. Finally, our model is extended through color-superconducting phases and we study the interplay of these phases with inhomogeneous chiral-symmetry breaking at non-vanishing isospin asymmetry, before we discuss our findings.

  19. Imaging the motion of electrons across semiconductor heterojunctions

    Science.gov (United States)

    Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  20. Coherent response of a semiconductor microcavity in the strong coupling regime

    Science.gov (United States)

    Cassabois, G.; Triques, A. L. C.; Ferreira, R.; Delalande, C.; Roussignol, Ph; Bogani, F.

    2000-05-01

    We have studied the coherent dynamics of a semiconductor microcavity by means of interferometric correlation measurements with subpicosecond time resolution in a backscattering geometry. Evidence is brought of the resolution of a homogeneous polariton line in an inhomogeneously broadened exciton system. Surprisingly, photon-like polaritons exhibit an inhomogeneous dephasing. Moreover, we observe an unexpected stationary coherence up to 8 ps for the lower polariton branch close to resonance. All these experimental results are well reproduced within the framework of a linear dispersion theory assuming a coherent superposition of the reflectivity and resonant Rayleigh scattering signals with a well-defined relative phase.

  1. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  3. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  4. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  5. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  6. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  7. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  8. The confinement effect in spherical inhomogeneous quantum dots and stability of excitons

    Directory of Open Access Journals (Sweden)

    F. Benhaddou

    2017-06-01

    Full Text Available We investigate in this work the quantum confinement effect of exciton in spherical inhomogeneous quantum dots IQDs. The spherical core is enveloped by two shells. The inner shell is a semiconductor characterized by a small band-gap. The core and the outer shell are the same semiconductor characterized by a large band-gap. So there is a significant gap-offset creating a deep potential well where the excitons are localized and strongly confined. We have adopted the Ritz variational method to calculate numerically the excitonic ground state energy and its binding energy in the strong, moderate and low confinement regimes. The results show that the Ritz variational method is in good agreement with the perturbation method in strong confinement. There is a double confinement effect and dual control. The calculation checks the effective Rydberg R* at the asymptotic limit of bulk semiconductor when the thickness takes very large values. The excitonic binding energy increases, Thus giving the excitons a high stability even at ambient temperature. These nanosystems are promising in several applications: lighting, detection, biological labeling and quantum computing.

  9. Electron-hole liquid in semiconductors and low-dimensional structures

    Science.gov (United States)

    Sibeldin, N. N.

    2017-11-01

    The condensation of excitons into an electron-hole liquid (EHL) and the main EHL properties in bulk semiconductors and low-dimensional structures are considered. The EHL properties in bulk materials are discussed primarily in qualitative terms based on the experimental results obtained for germanium and silicon. Some of the experiments in which the main EHL thermodynamic parameters (density and binding energy) have been obtained are described and the basic factors that determine these parameters are considered. Topics covered include the effect of external perturbations (uniaxial strain and magnetic field) on EHL stability; phase diagrams for a nonequilibrium exciton-gas-EHL system; information on the size and concentration of electron-hole drops (EHDs) under various experimental conditions; the kinetics of exciton condensation and of recombination in the exciton-gas-EHD system; dynamic EHD properties and the motion of EHDs under the action of external forces; the properties of giant EHDs that form in potential wells produced by applying an inhomogeneous strain to the crystal; and effects associated with the drag of EHDs by nonequilibrium phonons (phonon wind), including the dynamics and formation of an anisotropic spatial structure of the EHD cloud. In discussing EHLs in low-dimensional structures, a number of studies are reviewed on the observation and experimental investigation of phenomena such as spatially indirect (dipolar) electron-hole and exciton (dielectric) liquids in GaAs/AlGaAs structures with double quantum wells (QWs), EHDs containing only a few electron-hole pairs (dropletons), EHLs in type-I silicon QWs, and spatially direct and dipolar EHLs in type-II silicon-germanium heterostructures.

  10. Curvaton and the inhomogeneous end of inflation

    International Nuclear Information System (INIS)

    Assadullahi, Hooshyar; Wands, David; Firouzjahi, Hassan; Namjoo, Mohammad Hossein

    2012-01-01

    We study the primordial density perturbations and non-Gaussianities generated from the combined effects of an inhomogeneous end of inflation and curvaton decay in hybrid inflation. This dual role is played by a single isocurvature field which is massless during inflation but acquire a mass at the end of inflation via the waterfall phase transition. We calculate the resulting primordial non-Gaussianity characterized by the non-linearity parameter, f NL , recovering the usual end-of-inflation result when the field decays promptly and the usual curvaton result if the field decays sufficiently late

  11. Nature of inhomogeneous states in superconducting junctions

    International Nuclear Information System (INIS)

    Ivlev, B.I.; Kopnin, N.B.

    1982-01-01

    A superconducting structure which arises in a superconducting film under a strong injection of a current through a tunnel junction is considered. If the current density in the film exceeds the critical Ginzburg-Landau value, an inhomogeneous resistive state with phase-slip centers can arise in it. This state is charcterized by the presence of regions with different chemical potentials of the Cooper pairs. These shifts of the pair chemical potential and the nonuniform structure of the order parameter may account for the so-called multigap states which have been observed experimentally

  12. Refractive index inhomogeneity within an aerogel block

    International Nuclear Information System (INIS)

    Bellunato, T.; Calvi, M.; Da Silva Costa, C.F.; Matteuzzi, C.; Musy, M.; Perego, D.L.

    2006-01-01

    Evaluating local inhomogeneities of the refractive index inside aerogel blocks to be used as Cherenkov radiator is important for a high energy physics experiment where angular resolution is crucial. Two approaches are described and compared. The first one is based on the bending of a laser beam induced by refractive index gradients along directions normal to the unperturbed optical path. The second method exploits the Cherenkov effect itself by shooting an ultra-relativistic collimated electron beam through different points of the aerogel surface. Local refractive index variations result in sizable differences in the Cherenkov photons distribution

  13. Albedo and transmittance of inhomogeneous stratus clouds

    Energy Technology Data Exchange (ETDEWEB)

    Zuev, V.E.; Kasyanov, E.I.; Titov, G.A. [Institute of Atmospheric Optics, Tomsk (Russian Federation)] [and others

    1996-04-01

    A highly important topic is the study of the relationship between the statistical parameters of optical and radiative charactertistics of inhomogeneous stratus clouds. This is important because the radiation codes of general circulation models need improvement, and it is important for geophysical information. A cascade model has been developed at the Goddard Space Flight Center to treat stratocumulus clouds with the simplest geometry and horizontal fluctuations of the liquid water path (optical thickness). The model evaluates the strength with which the stochastic geometry of clouds influences the statistical characteristics of albedo and the trnasmittance of solar radiation.

  14. Metric inhomogeneous Diophantine approximation in positive characteristic

    DEFF Research Database (Denmark)

    Kristensen, Simon

    2011-01-01

    We obtain asymptotic formulae for the number of solutions to systems of inhomogeneous linear Diophantine inequalities over the field of formal Laurent series with coefficients from a finite fields, which are valid for almost every such system. Here `almost every' is with respect to Haar measure...... of the coefficients of the homogeneous part when the number of variables is at least two (singly metric case), and with respect to the Haar measure of all coefficients for any number of variables (doubly metric case). As consequences, we derive zero-one laws in the spirit of the Khintchine-Groshev Theorem and zero...

  15. Metric inhomogeneous Diophantine approximation in positive characteristic

    DEFF Research Database (Denmark)

    Kristensen, S.

    We obtain asymptotic formulae for the number of solutions to systems of inhomogeneous linear Diophantine inequalities over the field of formal Laurent series with coefficients from a finite fields, which are valid for almost every such system. Here 'almost every' is with respect to Haar measure...... of the coefficients of the homogeneous part when the number of variables is at least two (singly metric case), and with respect to the Haar measure of all coefficients for any number of variables (doubly metric case). As consequences, we derive zero-one laws in the spirit of the Khintchine--Groshev Theorem and zero...

  16. Waves in inhomogeneous plasma of cylindrical geometry

    International Nuclear Information System (INIS)

    Rebut, P.H.

    1966-01-01

    The conductivity tensor of a hot and inhomogeneous plasma has been calculated for a cylindrical geometry using Vlasov equations. The method used consists in a perturbation method involving the first integrals of the unperturbed movement. The conductivity tensor will be particularly useful for dealing with stability problems. In the case of a cold plasma the wave equation giving the electric fields as a function of the radius is obtained. This equation shows the existence of resonant layers which lead to an absorption analogous to the Landau absorption in a hot plasma. (author) [fr

  17. Fluctuations and transport in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Nevins, W.M.; Chen, L.

    1979-11-01

    A formalism is developed for calculating the equilibrium fluctuation level in an inhomogeneous plasma. This formalism is applied to the collisionless drift wave in a sheared magnetic field. The fluctuation level is found to be anomalously large due to both the presence of weakly damped normal modes and convective amplification. As the magnetic shear is reduced, the steady-state fluctuation spectrum is found to increase both in coherence and in amplitude. The transport associated with this mode is evaluated. The diffusion coefficient is found to scale as D is proportional to B 2 /nT/sup 1/2/

  18. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  19. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  20. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  1. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  2. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  3. OBSERVABLE DEVIATIONS FROM HOMOGENEITY IN AN INHOMOGENEOUS UNIVERSE

    Energy Technology Data Exchange (ETDEWEB)

    Giblin, John T. Jr. [Department of Physics, Kenyon College, 201 N College Road Gambier, OH 43022 (United States); Mertens, James B.; Starkman, Glenn D. [CERCA/ISO, Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106 (United States)

    2016-12-20

    How does inhomogeneity affect our interpretation of cosmological observations? It has long been wondered to what extent the observable properties of an inhomogeneous universe differ from those of a corresponding Friedmann–Lemaître–Robertson–Walker (FLRW) model, and how the inhomogeneities affect that correspondence. Here, we use numerical relativity to study the behavior of light beams traversing an inhomogeneous universe, and construct the resulting Hubble diagrams. The universe that emerges exhibits an average FLRW behavior, but inhomogeneous structures contribute to deviations in observables across the observer’s sky. We also investigate the relationship between angular diameter distance and the angular extent of a source, finding deviations that grow with source redshift. These departures from FLRW are important path-dependent effects, with implications for using real observables in an inhomogeneous universe such as our own.

  4. OBSERVABLE DEVIATIONS FROM HOMOGENEITY IN AN INHOMOGENEOUS UNIVERSE

    International Nuclear Information System (INIS)

    Giblin, John T. Jr.; Mertens, James B.; Starkman, Glenn D.

    2016-01-01

    How does inhomogeneity affect our interpretation of cosmological observations? It has long been wondered to what extent the observable properties of an inhomogeneous universe differ from those of a corresponding Friedmann–Lemaître–Robertson–Walker (FLRW) model, and how the inhomogeneities affect that correspondence. Here, we use numerical relativity to study the behavior of light beams traversing an inhomogeneous universe, and construct the resulting Hubble diagrams. The universe that emerges exhibits an average FLRW behavior, but inhomogeneous structures contribute to deviations in observables across the observer’s sky. We also investigate the relationship between angular diameter distance and the angular extent of a source, finding deviations that grow with source redshift. These departures from FLRW are important path-dependent effects, with implications for using real observables in an inhomogeneous universe such as our own.

  5. Acoustic Streaming and Its Suppression in Inhomogeneous Fluids

    DEFF Research Database (Denmark)

    Karlsen, Jonas Tobias; Qiu, Wei; Augustsson, Per

    2018-01-01

    We present a theoretical and experimental study of boundary-driven acoustic streaming in an inhomogeneous fluid with variations in density and compressibility. In a homogeneous fluid this streaming results from dissipation in the boundary layers (Rayleigh streaming). We show...... that in an inhomogeneous fluid, an additional nondissipative force density acts on the fluid to stabilize particular inhomogeneity configurations, which markedly alters and even suppresses the streaming flows. Our theoretical and numerical analysis of the phenomenon is supported by ultrasound experiments performed...

  6. Simultaneous use of linear and nonlinear gradients for B1+ inhomogeneity correction.

    Science.gov (United States)

    Ertan, Koray; Atalar, Ergin

    2017-09-01

    The simultaneous use of linear spatial encoding magnetic fields (L-SEMs) and nonlinear spatial encoding magnetic fields (N-SEMs) in B 1 + inhomogeneity problems is formulated and demonstrated with both simulations and experiments. Independent excitation k-space variables for N-SEMs are formulated for the simultaneous use of L-SEMs and N-SEMs by assuming a small tip angle. The formulation shows that, when N-SEMs are considered as an independent excitation k-space variable, numerous different k-space trajectories and frequency weightings differing in dimension, length, and energy can be designed for a given target transverse magnetization distribution. The advantage of simultaneous use of L-SEMs and N-SEMs is demonstrated by B 1 + inhomogeneity correction with spoke excitation. To fully utilize the independent k-space formulations, global optimizations are performed for 1D, 2D RF power limited, and 2D RF power unlimited simulations and experiments. Three different cases are compared: L-SEMs alone, N-SEMs alone, and both used simultaneously. In all cases, the simultaneous use of L-SEMs and N-SEMs leads to a decreased standard deviation in the ROI compared with using only L-SEMs or N-SEMs. The simultaneous use of L-SEMs and N-SEMs results in better B 1 + inhomogeneity correction than using only L-SEMs or N-SEMs due to the increased number of degrees of freedom. Copyright © 2017 John Wiley & Sons, Ltd.

  7. Turbulent structure of stably stratified inhomogeneous flow

    Science.gov (United States)

    Iida, Oaki

    2018-04-01

    Effects of buoyancy force stabilizing disturbances are investigated on the inhomogeneous flow where disturbances are dispersed from the turbulent to non-turbulent field in the direction perpendicular to the gravity force. Attaching the fringe region, where disturbances are excited by the artificial body force, a Fourier spectral method is used for the inhomogeneous flow stirred at one side of the cuboid computational box. As a result, it is found that the turbulent kinetic energy is dispersed as layered structures elongated in the streamwise direction through the vibrating motion. A close look at the layered structures shows that they are flanked by colder fluids at the top and hotter fluids at the bottom, and hence vertically compressed and horizontally expanded by the buoyancy related to the countergradient heat flux, though they are punctuated by the vertical expansion of fluids at the forefront of the layered structures, which is related to the downgradient heat flux, indicating that the layered structures are gravity currents. However, the phase between temperature fluctuations and vertical velocity is shifted by π/2 rad, indicating that temperature fluctuations are generated by the propagation of internal gravity waves.

  8. Robustness of inflation to inhomogeneous initial conditions

    Energy Technology Data Exchange (ETDEWEB)

    Clough, Katy; Lim, Eugene A. [Theoretical Particle Physics and Cosmology Group, Physics Department, Kings College London, Strand, London WC2R 2LS (United Kingdom); DiNunno, Brandon S.; Fischler, Willy; Flauger, Raphael; Paban, Sonia, E-mail: katy.clough@kcl.ac.uk, E-mail: eugene.a.lim@gmail.com, E-mail: bsd86@physics.utexas.edu, E-mail: fischler@physics.utexas.edu, E-mail: flauger@physics.utexas.edu, E-mail: paban@physics.utexas.edu [Department of Physics, The University of Texas at Austin, Austin, TX, 78712 (United States)

    2017-09-01

    We consider the effects of inhomogeneous initial conditions in both the scalar field profile and the extrinsic curvature on different inflationary models. In particular, we compare the robustness of small field inflation to that of large field inflation, using numerical simulations with Einstein gravity in 3+1 dimensions. We find that small field inflation can fail in the presence of subdominant gradient energies, suggesting that it is much less robust to inhomogeneities than large field inflation, which withstands dominant gradient energies. However, we also show that small field inflation can be successful even if some regions of spacetime start out in the region of the potential that does not support inflation. In the large field case, we confirm previous results that inflation is robust if the inflaton occupies the inflationary part of the potential. Furthermore, we show that increasing initial scalar gradients will not form sufficiently massive inflation-ending black holes if the initial hypersurface is approximately flat. Finally, we consider the large field case with a varying extrinsic curvature K , such that some regions are initially collapsing. We find that this may again lead to local black holes, but overall the spacetime remains inflationary if the spacetime is open, which confirms previous theoretical studies.

  9. Physical model of optical inhomogeneities of water

    Science.gov (United States)

    Shybanov, E. B.

    2017-11-01

    The paper is devoted to theoretical aspects of the light scattering of water that does not contain suspended particles. To be consistent with current physical point of view the water as far as any liquid is regarded as a complex unstable nonergodic media. It was proposed that at fixed time the water as a condensed medium had global inhomogeneities similar to linear and planar defects in a solid. Anticipated own global inhomogeneities of water have been approximated by the system randomly distributed spherical clusters filling the entire water bulk. An analytical expression for the single scattered light has been derived. The formula simultaneously describes both the high anisotropy of light scattering and the high degree of polarization which one close to those for molecular scattering. It is shown that at general angles there is a qualitative coincidence with the two-component Kopelevich's model for the light scattering by marine particles. On the contrary towards to forwards angles the spectral law becomes much more prominent i.e. it corresponds to results for model of optically soft particles.

  10. Microstructural evolution in inhomogeneous elastic media

    International Nuclear Information System (INIS)

    Jou, H.J.; Leo, P.H.; Lowengrub, J.S.

    1997-01-01

    We simulate the diffusional evolution of microstructures produced by solid state diffusional transformations in elastically stressed binary alloys in two dimensions. The microstructure consists of arbitrarily shaped precipitates embedded coherently in an infinite matrix. The precipitate and matrix are taken to be elastically isotropic, although they may have different elastic constants (elastically inhomogeneous). Both far-field applied strains and mismatch strains between the phases are considered. The diffusion and elastic fields are calculated using the boundary integral method, together with a small scale preconditioner to remove ill-conditioning. The precipitate-matrix interfaces are tracked using a nonstiff time updating method. The numerical method is spectrally accurate and efficient. Simulations of a single precipitate indicate that precipitate shapes depend strongly on the mass flux into the system as well as on the elastic fields. Growing shapes (positive mass flux) are dendritic while equilibrium shapes (zero mass flux) are squarish. Simulations of multiparticle systems show complicated interactions between precipitate morphology and the overall development of microstructure (i.e., precipitate alignment, translation, merging, and coarsening). In both single and multiple particle simulations, the details of the microstructural evolution depend strongly o the elastic inhomogeneity, misfit strain, and applied fields. 57 refs., 24 figs

  11. The effect of inhomogeneity of microstructure on ducility in superplasticity

    International Nuclear Information System (INIS)

    Manonukul, A.; Dunne, F.P.E.

    1996-01-01

    Finite element cell models have been developed to represent inhomogeneous grain size fields that occur in commercial Ti-6Al-4V. The models are used to investigate the influence of microstructure on superplastic stress-strain behaviour, inhomogeneity of deformation, and on ductility in superplastic deformation. It is shown that increasing the level of initial microstructural inhomogeneity leads to increasing flow stress for given strain, and that the microstructural inhomogeneity leads to inhomogeneous deformation. As superplasticity proceeds, the level of microstructural inhomogeneity diminishes, but the inhomogeneity itself is preserved during the deformation. It is shown that the inhomogeneity of microstructure leads to strain localisation which increases in severity with deformation until material necking and failure occur. Increasing the initial microstructural inhomogeneity is shown to lead to a decrease in ductility, but the effect diminishes for grain size ranges in excess of 30 μm. An empirical relationship is presented that relates the ductility to the initial grain size range through a power law. (orig.)

  12. Acoustic Streaming and Its Suppression in Inhomogeneous Fluids.

    Science.gov (United States)

    Karlsen, Jonas T; Qiu, Wei; Augustsson, Per; Bruus, Henrik

    2018-02-02

    We present a theoretical and experimental study of boundary-driven acoustic streaming in an inhomogeneous fluid with variations in density and compressibility. In a homogeneous fluid this streaming results from dissipation in the boundary layers (Rayleigh streaming). We show that in an inhomogeneous fluid, an additional nondissipative force density acts on the fluid to stabilize particular inhomogeneity configurations, which markedly alters and even suppresses the streaming flows. Our theoretical and numerical analysis of the phenomenon is supported by ultrasound experiments performed with inhomogeneous aqueous iodixanol solutions in a glass-silicon microchip.

  13. Emergence of curved light-cones in a class of inhomogeneous Luttinger liquids

    Directory of Open Access Journals (Sweden)

    Jérôme Dubail, Jean-Marie Stéphan, Pasquale Calabrese

    2017-09-01

    Full Text Available The light-cone spreading of entanglement and correlation is a fundamental and ubiquitous feature of homogeneous extended quantum systems. Here we point out that a class of inhomogenous Luttinger liquids (those with a uniform Luttinger parameter $K$ at low energy display the universal phenomenon of curved light cones: gapless excitations propagate along the geodesics of the metric $ds^2=dx^2+v(x^2 d\\tau^2$, with $v(x$ being the calculable spatial dependent velocity induced by the inhomogeneity. We confirm our findings with explicit analytic and numerical calculations both in- and out-of-equilibrium for a Tonks-Girardeau gas in a harmonic potential and in lattice systems with artificially tuned hamiltonian density.

  14. Conical light scattering in strontium barium niobate crystals related to an intrinsic composition inhomogeneity

    International Nuclear Information System (INIS)

    Bastwoeste, K; Sander, U; Imlau, M

    2007-01-01

    Conical light scattering is uncovered in poly- and mono-domain, nominally pure and Eu-doped strontium barium niobate (SBN) crystals over a wide temperature regime. The appearance of two scattering cones, a scattering line and a corona is observed and can be explained comprehensively within the Ewald sphere concept. Photorefraction, scattering from domain boundaries or from growth striations can be excluded from explaining the origin of the scattering. It is shown that the temperature-persistent scattering process is related to a growth-induced seeding rod, i.e. a composition inhomogeneity primarily localized at the centre of the SBN sample. The rod is directed parallel to the c axis and yields a refractive-index inhomogeneity with spatial frequencies on the micro-scale

  15. Ground state of a hydrogen ion molecule immersed in an inhomogeneous electron gas

    International Nuclear Information System (INIS)

    Diaz-Valdes, J.; Gutierrez, F.A.; Matamala, A.R.; Denton, C.D.; Vargas, P.; Valdes, J.E.

    2007-01-01

    In this work we have calculated the ground state energy of the hydrogen molecule, H 2 + , immersed in the highly inhomogeneous electron gas around a metallic surface within the local density approximation. The molecule is perturbed by the electron density of a crystalline surface of Au with the internuclear axis parallel to the surface. The surface spatial electron density is calculated through a linearized band structure method (LMTO-DFT). The ground state of the molecule-ion was calculated using the Born-Oppenheimer approximation for a fixed-ion while the screening effects of the inhomogeneous electron gas are depicted by a Thomas-Fermi like electrostatic potential. We found that within our model the molecular ion dissociates at the critical distance of 2.35a.u. from the first atomic layer of the solid

  16. Inhomogeneous distribution of Chlamydomonas in a cylindrical container with a bubble plume

    Science.gov (United States)

    Nonaka, Yuki; Kikuchi, Kenji; Numayama-Tsuruta, Keiko; Kage, Azusa; Ueno, Hironori; Ishikawa, Takuji

    2016-01-01

    ABSTRACT Swimming microalgae show various taxes, such as phototaxis and gravitaxis, which sometimes result in the formation of a cell-rich layer or a patch in a suspension. Despite intensive studies on the effects of shear flow and turbulence on the inhomogeneous distribution of microalgae, the effect of a bubble plume has remained unclear. In this study, we used Chlamydomonas as model microalgae, and investigated the spatial distribution of cells in a cylindrical container with a bubble plume. The results illustrate that cells become inhomogeneously distributed in the suspension due to their motility and photo-responses. A vortical ring distribution was observed below the free surface when the bubble flow rate was sufficiently small. We performed a scaling analysis on the length scale of the vortical ring, which captured the main features of the experimental results. These findings are important in understanding transport phenomena in a microalgae suspension with a bubble plume. PMID:26787679

  17. Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

    International Nuclear Information System (INIS)

    Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

    2013-01-01

    Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

  18. Moessbauer spectroscopy of locally inhomogeneous systems

    International Nuclear Information System (INIS)

    Rusakov, V. S.; Kadyrzhanov, K. K.

    2004-01-01

    Substances with characteristic local inhomogeneities - with different from position to position neighborhood and properties of like atoms - gain recently increased scientific attention and wide practical application. We would call a system locally inhomogeneous if atoms in the system are in non-equivalent atomic locations and reveal different properties. Such systems are, first of all, variable composition phases, amorphous, multi-phase, admixture, defect and other systems. LIS are most convenient model objects for studies of structure, charge, and spin atomic states, interatomic interactions, relations between matter properties and its local characteristics as well as for studies of diffusion kinetics, phase formation, crystallization and atomic ordering; all that explains considerable scientific interest in such LIS. Such systems find their practical application due to wide spectrum of useful, and sometimes unique, properties that can be controlled varying character and degree of local inhomogeneity. Moessbauer spectroscopy is one of the most effective methods for investigation of LIS. Local character of obtained information combined with information on cooperative phenomena makes it possible to run investigations impossible for other methods. Moessbauer spectroscopy may provide with abundant information on peculiarities of macro- and microscopic state of matter including that for materials without regular structure. At the same time, analysis, processing and interpretation of Moessbauer spectra for LIS (that are sets of a large amount of partial spectra) face considerable difficulties. Development of computer technique is accompanied with development of mathematical methods used for obtaining physical information from experimental data. The methods make it possible to improve considerably, with some available a priori information, effectiveness of the research. Utilization of up-to-date mathematical methods in Moessbauer spectroscopy requires not only adaptation

  19. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  20. Electronic transitions in quantum dots and rings induced by inhomogeneous off-centered light beams.

    Science.gov (United States)

    Quinteiro, G F; Lucero, A O; Tamborenea, P I

    2010-12-22

    We theoretically investigate the effect of inhomogeneous light beams with (twisted light) and without (plane-wave light) orbital angular momentum on semiconductor-based nanostructures, when the symmetry axes of the beam and the nanostructure are displaced parallel to each other. Exact analytical results are obtained by expanding the off-centered light field in terms of the appropriate light modes centered around the nanostructure. We demonstrate how electronic transitions involving the transfer of different amounts of orbital angular momentum are switched on and off as a function of the separation between the axes of the beam and the system. In particular, we show that even off-centered plane-wave beams induce transitions such that the angular momenta of the initial and final states are different.

  1. Propagation of three-dimensional bipolar ultrashort electromagnetic pulses in an inhomogeneous array of carbon nanotubes

    Science.gov (United States)

    Fedorov, Eduard G.; Zhukov, Alexander V.; Bouffanais, Roland; Timashkov, Alexander P.; Malomed, Boris A.; Leblond, Hervé; Mihalache, Dumitru; Rosanov, Nikolay N.; Belonenko, Mikhail B.

    2018-04-01

    We study the propagation of three-dimensional (3D) bipolar ultrashort electromagnetic pulses in an inhomogeneous array of semiconductor carbon nanotubes. The heterogeneity is represented by a planar region with an increased concentration of conduction electrons. The evolution of the electromagnetic field and electron concentration in the sample are governed by the Maxwell's equations and continuity equation. In particular, nonuniformity of the electromagnetic field along the axis of the nanotubes is taken into account. We demonstrate that depending on values of the parameters of the electromagnetic pulse approaching the region with the higher electron concentration, the pulse is either reflected from the region or passes it. Specifically, our simulations demonstrate that after interacting with the higher-concentration area, the pulse can propagate steadily, without significant spreading. The possibility of such ultrashort electromagnetic pulses propagating in arrays of carbon nanotubes over distances significantly exceeding characteristic dimensions of the pulses makes it possible to consider them as 3D solitons.

  2. Nonlocal inhomogeneous broadening in plasmonic nanoparticle ensembles

    DEFF Research Database (Denmark)

    Tserkezis, Christos; Maack, Johan Rosenkrantz; Liu, Z.

    Nonclassical effects are increasingly more relevant in plasmonics as modern nanofabrication techniques rapidly approach the extreme nanoscale limits, for which departing from classical electrodynamics becomes important. One of the largest-scale necessary corrections towards this direction...... is to abandon the local response approximation (LRA) and take the nonlocal response of the metal into account, typically through the simple hydrodynamic Drude model (HDM), which predicts a sizedependent deviation of plasmon modes from the quasistatic (QS) limit. While this behaviour has been explored for simple...... metallic nanoparticles (NPs) or NP dimers, the possibility of inhomogeneous resonance broadening due to size variation in a large NP collection and the resulting spectral overlap of modes (as depicted in Fig. 1), has been so far overlooked. Here we study theoretically the effect of nonlocality on ensemble...

  3. Measurable inhomogeneities in stock trading volume flow

    Science.gov (United States)

    Cortines, A. A. G.; Riera, R.; Anteneodo, C.

    2008-08-01

    We investigate the statistics of volumes of shares traded in stock markets. We show that the stochastic process of trading volumes can be understood on the basis of a mixed Poisson process at the microscopic time level. The beta distribution of the second kind (also known as q-gamma distribution), that has been proposed to describe empirical volume histograms, naturally results from our analysis. In particular, the shape of the distribution at small volumes is governed by the degree of granularity in the trading process, while the exponent controlling the tail is a measure of the inhomogeneities in market activity. Furthermore, the present case furnishes empirical evidence of how power law probability distributions can arise as a consequence of a fluctuating intrinsic parameter.

  4. Origin of Inhomogeneity in Glass Melts

    DEFF Research Database (Denmark)

    Jensen, Martin; Keding, Ralf; Yue, Yuanzheng

    The homogeneity of a glass plays a crucial role in many applications as the inhomogeneities can provide local changes in mechanical properties, optical properties, and thermal expansion coefficient. Homogeneity is not a single property of the glass, instead, it consists of several factors...... such as bubbles, striae, trace element concentration, undissolved species, and crystallised species. As it is not possible to address all the factors in a single study, this work focuses on one of the major factors: chemical striae. Up to now, the quantification of chemical striae in glasses, particularly......, in less transparent glasses, has been a challenge due to the lack of an applicable method. In this study, we have established a simple and accurate method for quantifying the extent of the striae, which is based on the scanning and picture processing through the Fourier transformation. By performing...

  5. Large sample neutron activation analysis of a reference inhomogeneous sample

    International Nuclear Information System (INIS)

    Vasilopoulou, T.; Athens National Technical University, Athens; Tzika, F.; Stamatelatos, I.E.; Koster-Ammerlaan, M.J.J.

    2011-01-01

    A benchmark experiment was performed for Neutron Activation Analysis (NAA) of a large inhomogeneous sample. The reference sample was developed in-house and consisted of SiO 2 matrix and an Al-Zn alloy 'inhomogeneity' body. Monte Carlo simulations were employed to derive appropriate correction factors for neutron self-shielding during irradiation as well as self-attenuation of gamma rays and sample geometry during counting. The large sample neutron activation analysis (LSNAA) results were compared against reference values and the trueness of the technique was evaluated. An agreement within ±10% was observed between LSNAA and reference elemental mass values, for all matrix and inhomogeneity elements except Samarium, provided that the inhomogeneity body was fully simulated. However, in cases that the inhomogeneity was treated as not known, the results showed a reasonable agreement for most matrix elements, while large discrepancies were observed for the inhomogeneity elements. This study provided a quantification of the uncertainties associated with inhomogeneity in large sample analysis and contributed to the identification of the needs for future development of LSNAA facilities for analysis of inhomogeneous samples. (author)

  6. Collapse arresting in an inhomogeneous quintic nonlinear Schrodinger model

    DEFF Research Database (Denmark)

    Gaididei, Yuri Borisovich; Schjødt-Eriksen, Jens; Christiansen, Peter Leth

    1999-01-01

    Collapse of (1 + 1)-dimensional beams in the inhomogeneous one-dimensional quintic nonlinear Schrodinger equation is analyzed both numerically and analytically. It is shown that in the vicinity of a narrow attractive inhomogeneity, the collapse of beams in which the homogeneous medium would blow up...

  7. Bistable soliton states and switching in doubly inhomogeneously ...

    Indian Academy of Sciences (India)

    Dec. 2001 physics pp. 969–979. Bistable soliton states and switching in doubly inhomogeneously doped fiber couplers. AJIT KUMAR. Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110 016, India. Abstract. Switching between the bistable soliton states in a doubly and inhomogeneously doped.

  8. Scattering of a spherical pulse from a small inhomogeneity ...

    Indian Academy of Sciences (India)

    R. Narasimhan (Krishtel eMaging Solutions)

    Perturbations in elastic constants and density distinguish a volume inhomogeneity from its homoge- neous surroundings. The equation of motion for the first order scattering is studied in the perturbed medium. The scattered waves are generated by the interaction between the primary waves and the inhomogeneity.

  9. Consideration of inhomogeneities in irradiation planning. Pt. 1

    International Nuclear Information System (INIS)

    Zwicker, H.; Felix, R.

    1976-01-01

    In radiation therapy, the focal doses during irradiation of a tumor are based on the values for water, since water has almost the same absorption coefficient as muscular tissue, even for different kinds and energies of radiation. But calculation of the tumor dose will become inaccurate if inhomogeneities in the ray path are not considered such as fat, bones, plaster, metal plates, Kuentscher nails, endoprotheses. These materials, having a density sigma different from water, represent inhomogeneities relative to water with regard to the absorption of high-energy radiation. The experiments yielded the following results: All measurements revealed that the change in the course of the depth dose curve caused by inhomogeneities in water depends essentially on the density sigma and on the thickness d of the inhomogeneity. If the density sigma of the inhomogeneity exceeds one, a shift of the depth dose curve in water results in the direction of the surface; if the density sigma is smaller than one, the depth dose curve will move towards greater depth because of the inhomogeneity. With Co-60 gamma radiation, the shift of the depth dose curve in water due to an inhomogeneity occurs almost parallel. A correlation obtained empirically allows a calculation of th extent of the shift the depth dose is subject to for different inhomogeneities. (orig./ORU) [de

  10. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  12. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  13. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  14. Excitons in InP/InAs inhomogeneous quantum dots

    CERN Document Server

    Assaid, E; Khamkhami, J E; Dujardin, F

    2003-01-01

    Wannier excitons confined in an InP/InAs inhomogeneous quantum dot (IQD) have been studied theoretically in the framework of the effective mass approximation. A finite-depth potential well has been used to describe the effect of the quantum confinement in the InAs layer. The exciton binding energy has been determined using the Ritz variational method. The spatial correlation between the electron and the hole has been taken into account in the expression for the wavefunction. It has been shown that for a fixed size b of the IQD, the exciton binding energy depends strongly on the core radius a. Moreover, it became apparent that there are two critical values of the core radius, a sub c sub r sub i sub t and a sub 2 sub D , for which important changes of the exciton binding occur. The former critical value, a sub c sub r sub i sub t , corresponds to a minimum of the exciton binding energy and may be used to distinguish between tridimensional confinement and bidimensional confinement. The latter critical value, a ...

  15. Excitons in InP/InAs inhomogeneous quantum dots

    International Nuclear Information System (INIS)

    Assaid, E; Feddi, E; Khamkhami, J El; Dujardin, F

    2003-01-01

    Wannier excitons confined in an InP/InAs inhomogeneous quantum dot (IQD) have been studied theoretically in the framework of the effective mass approximation. A finite-depth potential well has been used to describe the effect of the quantum confinement in the InAs layer. The exciton binding energy has been determined using the Ritz variational method. The spatial correlation between the electron and the hole has been taken into account in the expression for the wavefunction. It has been shown that for a fixed size b of the IQD, the exciton binding energy depends strongly on the core radius a. Moreover, it became apparent that there are two critical values of the core radius, a crit and a 2D , for which important changes of the exciton binding occur. The former critical value, a crit , corresponds to a minimum of the exciton binding energy and may be used to distinguish between tridimensional confinement and bidimensional confinement. The latter critical value, a 2D , corresponds to a maximum of the exciton binding energy and to the most pronounced bidimensional character of the exciton

  16. Inhomogeneity driven by Higgs instability in a gapless superconductor

    International Nuclear Information System (INIS)

    Giannakis, Ioannis; Hou Defu; Huang Mei; Ren Haicang

    2007-01-01

    The fluctuations of the Higgs and pseudo Nambu-Goldstone fields in the 2-flavor color superconductivity (2SC) phase with mismatched pairing are described in the nonlinear realization framework of the gauged Nambu-Jona-Lasinio model. In the gapless 2SC phase, not only Nambu-Goldstone currents can be spontaneously generated, but also the Higgs field exhibits instablity. The Nambu-Goldstone currents generation indicates the formation of the single plane wave Larkin-Ovchinnikov-Fulde-Ferrel state and breaks rotation symmetry, while the Higgs instability favors spatial inhomogeneity and breaks translation invariance. In this paper, we focus on the Higgs instability which has not drawn much attention yet. The Higgs instability cannot be removed without a long range force, thus it persists in the gapless superfluidity and induces phase separation. In the case of gapless 2-flavor color superconductivity state, the Higgs instability can only be partially removed by the electric Coulomb energy. However, it is not excluded that the Higgs instability might be completely removed in the charge neutral gapless color-flavor locked phase by the color Coulomb energy

  17. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

    Science.gov (United States)

    Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

    2015-05-29

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

  18. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Hudy, L J; Li, L; Li, C H

    2015-01-01

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current–voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions. (paper)

  19. Light Manipulation in Inhomogeneous Liquid Flow and Its Application in Biochemical Sensing

    Directory of Open Access Journals (Sweden)

    Yunfeng Zuo

    2018-04-01

    Full Text Available Light manipulation has always been the fundamental subject in the field of optics since centuries ago. Traditional optical devices are usually designed using glasses and other materials, such as semiconductors and metals. Optofluidics is the combination of microfluidics and optics, which brings a host of new advantages to conventional solid systems. The capabilities of light manipulation and biochemical sensing are inherent alongside the emergence of optofluidics. This new research area promotes advancements in optics, biology, and chemistry. The development of fast, accurate, low-cost, and small-sized biochemical micro-sensors is an urgent demand for real-time monitoring. However, the fluid flow in the on-chip sensor is usually non-uniformed, which is a new and emerging challenge for the accuracy of optical detection. It is significant to reveal the principle of light propagation in an inhomogeneous liquid flow and the interaction between biochemical samples and light in flowing liquids. In this review, we summarize the current state of optofluidic lab-on-a-chip techniques from the perspective of light modulation by the unique dynamic properties of fluid in heterogeneous media, such as diffusion, heat transfer, and centrifugation etc. Furthermore, this review introduces several novel photonic phenomena in an inhomogeneous liquid flow and demonstrates their application in biochemical sensing.

  20. Effects of nanoscale density inhomogeneities on shearing fluids

    DEFF Research Database (Denmark)

    Ben, Dalton,; Peter, Daivis,; Hansen, Jesper Schmidt

    2013-01-01

    It is well known that density inhomogeneities at the solid-liquid interface can have a strong effect on the velocity profile of a nanoconfined fluid in planar Poiseuille flow. However, it is difficult to control the density inhomogeneities induced by solid walls, making this type of system...... systems. Using the sinusoidal transverse force method to produce shearing velocity profiles and the sinusoidal longitudinal force method to produce inhomogeneous density profiles, we are able to observe the interactions between the two property inhomogeneities at the level of individual Fourier components....... This gives us a method for direct measurement of the coupling between the density and velocity fields and allows us to introduce various feedback control mechanisms which customize fluid behavior in individual Fourier components. We briefly discuss the role of temperature inhomogeneity and consider whether...

  1. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  2. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  3. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  4. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  5. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  6. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  7. Synchronous characterization of semiconductor microcavity laser beam.

    Science.gov (United States)

    Wang, T; Lippi, G L

    2015-06-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  8. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  9. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  10. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  11. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  12. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  13. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  14. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  15. Two and Three-Dimensional Nonlocal DFT for Inhomogeneous Fluids I: Algorithms and Parallelization

    Energy Technology Data Exchange (ETDEWEB)

    Frink, Laura J. Douglas; Salinger, Andrew

    1999-08-09

    Fluids adsorbed near surfaces, macromolecules, and in porous materials are inhomogeneous, inhibiting spatially varying density distributions. This inhomogeneity in the fluid plays an important role in controlling a wide variety of complex physical phenomena including wetting, self-assembly, corrosion, and molecular recognition. One of the key methods for studying the properties of inhomogeneous fluids in simple geometries has been density functional theory (DFT). However, there has been a conspicuous lack of calculations in complex 2D and 3D geometries. The computational difficulty arises from the need to perform nested integrals that are due to nonlocal terms in the free energy functional These integral equations are expensive both in evaluation time and in memory requirements; however, the expense can be mitigated by intelligent algorithms and the use of parallel computers. This paper details our efforts to develop efficient numerical algorithms so that no local DFT calculations in complex geometries that require two or three dimensions can be performed. The success of this implementation will enable the study of solvation effects at heterogeneous surfaces, in zeolites, in solvated (bio)polymers, and in colloidal suspensions.

  16. Two- and three-dimensional nonlocal density functional theory for inhomogeneous fluids. 1. Algorithms and parallelization

    International Nuclear Information System (INIS)

    Frink, L.J.D.; Salinger, A.G.

    2000-01-01

    Fluids adsorbed near surfaces, near macromolecules, and in porous materials are inhomogeneous, exhibiting spatially varying density distributions. This inhomogeneity in the fluid plays an important role in controlling a wide variety of complex physical phenomena including wetting, self-assembly, corrosion, and molecular recognition. One of the key methods for studying the properties of inhomogeneous fluids in simple geometries has been density functional theory (DFT). However, there has been a conspicuous lack of calculations in complex two- and three-dimensional geometries. The computational difficulty arises from the need to perform nested integrals that are due to nonlocal terms in the free energy functional. These integral equations are expensive both in evaluation time and in memory requirements; however, the expense can be mitigated by intelligent algorithms and the use of parallel computers. This paper details the efforts to develop efficient numerical algorithms so that nonlocal DFT calculations in complex geometries that require two or three dimensions can be performed. The success of this implementation will enable the study of solvation effects at heterogeneous surfaces, in zeolites, in solvated (bio)polymers, and in colloidal suspensions

  17. ONETRAN, 1-D Transport in Planar, Cylindrical, Spherical Geometry for Homogeneous, Inhomogeneous Problem, Anisotropic Source

    International Nuclear Information System (INIS)

    1982-01-01

    1 - Description of problem or function: ONETRAN solves the one- dimensional multigroup transport equation in plane, cylindrical, spherical, and two-angle plane geometries. Both regular and adjoint, inhomogeneous and homogeneous (K-eff and eigenvalue searches) problems subject to vacuum, reflective, periodic, white, albedo or inhomogeneous boundary flux conditions are solved. General anisotropic scattering is allowed and anisotropic inhomogeneous sources are permitted. 2 - Method of solution: The discrete ordinates approximation for the angular variable is used with the diamond (central) difference approximation for the angular extrapolation in curved geometries. A linear discontinuous finite element representation for the angular flux in each spatial mesh cell is used. Negative fluxes are eliminated by a local set-to-zero and correct algorithm. Standard inner (within-group) iteration cycles are accelerated by system re-balance, coarse mesh re-balance, or Chebyshev acceleration. Outer iteration cycles are accelerated by coarse-mesh re-balance. 3 - Restrictions on the complexity of the problem: Variable dimensioning is used so that any combination of problem parameters leading to a container array less than MAXCOR can be accommodated. On CDC machines MAXCOR can be about 25 000 words and peripheral storage is used for most group-dependent data

  18. Semiconductor Quantum Dash Broadband Emitters: Modeling and Experiments

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2013-10-01

    Broadband light emitters operation, which covers multiple wavelengths of the electromagnetic spectrum, has been established as an indispensable element to the human kind, continuously advancing the living standard by serving as sources in important multi-disciplinary field applications such as biomedical imaging and sensing, general lighting and internet and mobile phone connectivity. In general, most commercial broadband light sources relies on complex systems for broadband light generation which are bulky, and energy hungry. \\tRecent demonstration of ultra-broadband emission from semiconductor light sources in the form of superluminescent light emitting diodes (SLDs) has paved way in realization of broadband emitters on a completely novel platform, which offered compactness, cost effectiveness, and comparatively energy efficient, and are already serving as a key component in medical imaging systems. The low power-bandwidth product is inherent in SLDs operating in the amplified spontaneous emission regime. A quantum leap in the advancement of broadband emitters, in which high power and large bandwidth (in tens of nm) are in demand. Recently, the birth of a new class of broadband semiconductor laser diode (LDs) producing multiple wavelength light in stimulated emission regime was demonstrated. This very recent manifestation of a high power-bandwidth-product semiconductor broadband LDs relies on interband optical transitions via quantum confined dot/dash nanostructures and exploiting the natural inhomogeneity of the self-assembled growth technology. This concept is highly interesting and extending the broad spectrum of stimulated emission by novel device design forms the central focus of this dissertation. \\tIn this work, a simple rate equation numerical technique for modeling InAs/InP quantum dash laser incorporating the properties of inhomogeneous broadening effect on lasing spectra was developed and discussed, followed by a comprehensive experimental analysis

  19. Printable semiconductor structures and related methods of making and assembling

    Science.gov (United States)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  20. Size-dependent nonlocal effects in plasmonic semiconductor particles

    DEFF Research Database (Denmark)

    Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

    2017-01-01

    Localized surface plasmons (LSP) in semiconductor particles are expected to exhibit spatial nonlocal response effects as the geometry enters the nanometer scale. To investigate these nonlocal effects, we apply the hydrodynamic model to nanospheres of two different semiconductor materials: intrinsic...... InSb and n-doped GaAs. Our results show that the semiconductors indeed display nonlocal effects, and that these effects are even more pronounced than in metals. In a 150 nm InSb particle at 300 K, the LSP frequency is blueshifted 35%, which is orders of magnitude larger than the blueshift in a metal...... particle of the same size. This property, together with their tunability, makes semiconductors a promising platform for experiments in nonlocal effects. Copyright (C)EPLA, 2017...

  1. A real space calculation of absolutely unstable modes for two-plasmon decay in inhomogeneous plasma

    International Nuclear Information System (INIS)

    Powers, L.V.; Berger, R.L.

    1986-01-01

    Growth rates for absolute modes of two-plasmon decay are obtained by solving for eigenmodes of the coupled mode equations for obliquely scattered Langmuir waves in real space. This analysis establishes a connection both to previous analysis in Fourier transform space and to other parametric instabilities, the analysis of which is commonly done in real space. The essential feature of the instability which admits absolute modes in an inhomogeneous plasma is the strong spatial dependence of the coupling coefficients. Landau damping limits the perpendicular wavenumbers of the most unstable modes and raises the instability thresholds for background plasma temperatures above 1 keV. (author)

  2. Scattering of inhomogeneous circularly polarized optical field and mechanical manifestation of the internal energy flows

    DEFF Research Database (Denmark)

    Bekshaev, A. Ya; Angelsky, O. V.; Hanson, Steen Grüner

    2012-01-01

    between the forward- and backward-scattered momentum fluxes in the Rayleigh scattering regime appears due to the spin part of the internal energy flow in the incident beam. The transverse ponderomotive forces exerted on dielectric and conducting particles of different sizes are calculated and special......Based on the Mie theory and on the incident beam model via superposition of two plane waves, we analyze numerically the momentum flux of the field scattered by a spherical, nonmagnetic microparticle placed within the spatially inhomogeneous circularly polarized paraxial light beam. The asymmetry...

  3. New class of inhomogeneous cosmological perfect-fluid solutions without big-bang singularity

    Energy Technology Data Exchange (ETDEWEB)

    Senovilla, J.M.M. (Grupo de Fisica Teorica, Departamento de Fisica, Ingenieria y Radiologia Medica, Facultad de Ciencias, Universidad de Salamanca, 37008 Salmanaca (Spain))

    1990-05-07

    A new class of exact solutions to Einstein's field equations with a perfect-fluid source is presented. The solutions describe spatially inhomogeneous cosmological models and have a realistic equation of state {ital p}={rho}/3. The properties of the solutions are discussed. The most remarkable feature is the absence of an initial singularity, the curvature and matter invariants being regular and smooth everywhere. We also present an alternative interpretation of the solution as a globally regular cylindrically symmetric space-time.

  4. Magnon localization and Bloch oscillations in finite Heisenberg spin chains in an inhomogeneous magnetic field.

    Science.gov (United States)

    Kosevich, Yuriy A; Gann, Vladimir V

    2013-06-19

    We study the localization of magnon states in finite defect-free Heisenberg spin-1/2 ferromagnetic chains placed in an inhomogeneous magnetic field with a constant spatial gradient. Continuous transformation from the extended magnon states to the localized Wannier-Zeeman states in a finite spin chain placed in an inhomogeneous field is described both analytically and numerically. We describe for the first time the non-monotonic dependence of the energy levels of magnons, both long and short wavelength, on the magnetic field gradient, which is a consequence of magnon localization in a finite spin chain. We show that, in contrast to the destruction of the magnon band and the establishment of the Wannier-Stark ladder in a vanishingly small field gradient in an infinite chain, the localization of magnon states at the chain ends preserves the memory of the magnon band. Essentially, the localization at the lower- or higher-field chain end resembles the localization of the positive- or negative-effective-mass band quasiparticles. We also show how the beat dynamics of coherent superposition of extended spin waves in a finite chain in a homogeneous or weakly inhomogeneous field transforms into magnon Bloch oscillations of the superposition of localized Wannier-Zeeman states in a strongly inhomogeneous field. We provide a semiclassical description of the magnon Bloch oscillations and show that the correspondence between the quantum and semiclassical descriptions is most accurate for Bloch oscillations of the magnon coherent states, which are built from a coherent superposition of a large number of the nearest-neighbour Wannier-Zeeman states.

  5. Magnon localization and Bloch oscillations in finite Heisenberg spin chains in an inhomogeneous magnetic field

    International Nuclear Information System (INIS)

    Kosevich, Yuriy A; Gann, Vladimir V

    2013-01-01

    We study the localization of magnon states in finite defect-free Heisenberg spin-1/2 ferromagnetic chains placed in an inhomogeneous magnetic field with a constant spatial gradient. Continuous transformation from the extended magnon states to the localized Wannier–Zeeman states in a finite spin chain placed in an inhomogeneous field is described both analytically and numerically. We describe for the first time the non-monotonic dependence of the energy levels of magnons, both long and short wavelength, on the magnetic field gradient, which is a consequence of magnon localization in a finite spin chain. We show that, in contrast to the destruction of the magnon band and the establishment of the Wannier–Stark ladder in a vanishingly small field gradient in an infinite chain, the localization of magnon states at the chain ends preserves the memory of the magnon band. Essentially, the localization at the lower- or higher-field chain end resembles the localization of the positive- or negative-effective-mass band quasiparticles. We also show how the beat dynamics of coherent superposition of extended spin waves in a finite chain in a homogeneous or weakly inhomogeneous field transforms into magnon Bloch oscillations of the superposition of localized Wannier–Zeeman states in a strongly inhomogeneous field. We provide a semiclassical description of the magnon Bloch oscillations and show that the correspondence between the quantum and semiclassical descriptions is most accurate for Bloch oscillations of the magnon coherent states, which are built from a coherent superposition of a large number of the nearest-neighbour Wannier–Zeeman states. (paper)

  6. Evolution of vacuum bubbles embedded in inhomogeneous spacetimes

    Energy Technology Data Exchange (ETDEWEB)

    Pannia, Florencia Anabella Teppa [Grupo de Astrofísica, Relatividad y Cosmología, Facultad de Ciencias Astronómicas y Geofísicas, Universidad Nacional de La Plata, Paseo del Bosque s/n B1900FWA, La Plata (Argentina); Bergliaffa, Santiago Esteban Perez, E-mail: fteppa@fcaglp.unlp.edu.ar, E-mail: sepbergliaffa@gmail.com [Departamento de Física Teórica, Instituto de Física, Universidade do Estado de Rio de Janeiro, CEP 20550-013, Rio de Janeiro, Brazil. (Brazil)

    2017-03-01

    We study the propagation of bubbles of new vacuum in a radially inhomogeneous background filled with dust or radiation, and including a cosmological constant, as a first step in the analysis of the influence of inhomogeneities in the evolution of an inflating region. We also compare the cases with dust and radiation backgrounds and show that the evolution of the bubble in radiation environments is notably different from that in the corresponding dust cases, both for homogeneous and inhomogeneous ambients, leading to appreciable differences in the evolution of the proper radius of the bubble.

  7. Inhomogeneity of epidemic spreading with entropy-based infected clusters.

    Science.gov (United States)

    Wen-Jie, Zhou; Xing-Yuan, Wang

    2013-12-01

    Considering the difference in the sizes of the infected clusters in the dynamic complex networks, the normalized entropy based on infected clusters (δ*) is proposed to characterize the inhomogeneity of epidemic spreading. δ* gives information on the variability of the infected clusters in the system. We investigate the variation in the inhomogeneity of the distribution of the epidemic with the absolute velocity v of moving agent, the infection density ρ, and the interaction radius r. By comparing δ* in the dynamic networks with δH* in homogeneous mode, the simulation experiments show that the inhomogeneity of epidemic spreading becomes smaller with the increase of v, ρ, r.

  8. Microinstabilities in a moderately inhomogeneous plasma

    International Nuclear Information System (INIS)

    Singer, C.E.

    1977-01-01

    We describe the onset of plasma instability due to heat conduction in a fully ionized hydrogen plasma with small temperature, pressure, and electric potential gradients. The effect of these gradients on plasma stability depends on a single inhomogeneity parameter B/sub t/, which is a measure of the ratio of the electron mean free path to the scale height of the plasma. A large value of vertical-barB/sub t/vertical-bar indicates that the plasma is collisionless. We find the least value of vertical-barB/sub t/vertical-bar needed to produce instability for the range of electron to hydrogen ion temperature ratios T and ion to magnetic pressure ratios β/sub i/, relevant to the solar wind and other plasmas. The wave parameters of the first unstable modes (the modes which become unstable for the least value of vertical-barB/sub t/vertical-bar) are described. The fast mode is the first unstable mode at high β/sub i/, the intermediate mode is the first unstable mode at low β/sub i/, and low temperature ratios, and the slow mode is the first unstable mode at low β/sub i/ and higher temperature ratios

  9. Mathematical Modeling of Extinction of Inhomogeneous Populations

    Science.gov (United States)

    Karev, G.P.; Kareva, I.

    2016-01-01

    Mathematical models of population extinction have a variety of applications in such areas as ecology, paleontology and conservation biology. Here we propose and investigate two types of sub-exponential models of population extinction. Unlike the more traditional exponential models, the life duration of sub-exponential models is finite. In the first model, the population is assumed to be composed clones that are independent from each other. In the second model, we assume that the size of the population as a whole decreases according to the sub-exponential equation. We then investigate the “unobserved heterogeneity”, i.e. the underlying inhomogeneous population model, and calculate the distribution of frequencies of clones for both models. We show that the dynamics of frequencies in the first model is governed by the principle of minimum of Tsallis information loss. In the second model, the notion of “internal population time” is proposed; with respect to the internal time, the dynamics of frequencies is governed by the principle of minimum of Shannon information loss. The results of this analysis show that the principle of minimum of information loss is the underlying law for the evolution of a broad class of models of population extinction. Finally, we propose a possible application of this modeling framework to mechanisms underlying time perception. PMID:27090117

  10. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  11. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  12. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  13. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  14. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  15. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  16. Imaging the motion of electrons in 2D semiconductor heterostructures

    Science.gov (United States)

    Dani, Keshav

    Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

  17. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  19. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  20. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  1. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  3. Thermal quantum discord of spins in an inhomogeneous magnetic field

    International Nuclear Information System (INIS)

    Guo Jinliang; Mi Yingjuan; Zhang Jian; Song Heshan

    2011-01-01

    In contrast with the thermal entanglement, we study the quantum discord and classical correlation in a two-qubit Heisenberg XXZ model with an inhomogeneous magnetic field. It is shown that the effects of the external magnetic fields, including the uniform and inhomogeneous magnetic fields, on the thermal entanglement, quantum discord and classical correlation behave differently in various aspects, which depend on system temperature and model type. We can tune the inhomogeneous magnetic field to enhance the entanglement or classical correlation and meanwhile decrease the quantum discord. In addition, taking into account the inhomogeneous magnetic field, the sudden change in the behaviour of quantum discord still survives, which can detect the critical points of quantum phase transitions at finite temperature, but not for a uniform magnetic field.

  4. Cyclotron spectra from inhomogeneous accretion columns. II. Polarization

    International Nuclear Information System (INIS)

    Wu, K.; Chanmugam, G.

    1989-01-01

    Circularly and linearly polarized radiation from inhomogeneous cyclotron emission regions with uniform magnetic field and temperature but different electron density profiles are studied. Calculations show that the inhomogeneous models generally produce larger polarization for low harmonics and smaller polarization for high harmonics compared to the homogeneous models. Polarization light curves for different inhomogeneous models with a wide variety of parameters are presented, providing handy theoretical results to compare with observations. The observed polarization light curves of ST LMi, EF Eri, and BL Hydri are fitted using an inhomogeneous model for the first time, and good fits are obtained, supporting the hypothesis that the cyclotron emission regions of AM Her systems have a complicated structure. 37 refs

  5. On the penetration of solar wind inhomogeneities into the magnetosphere

    International Nuclear Information System (INIS)

    Maksimov, V.P.; Senatorov, V.N.

    1980-01-01

    Laboratory experiments were used as a basis to study the process of interaction between solar wind inhomogeneities and the Earth's magnetosphere. The given inhomogeneity represents a lump of plasma characterized by an increased concentration of particles (nsub(e) approximately 20-30 cm -3 ), a discrete form (characteristic dimensions of the lump are inferior to the magnetosphere diameter) and the velocity v approximately 350 km/s. It is shown that there is the possibility of penetration of solar wind inhomogeneities inside the Earth's magnetosphere because of the appearance in the inhomogeneity of an electric field of transverse polarization. The said process is a possible mechanism of the formation of the magnetopshere entrance layer

  6. Anomalous transient behavior from an inhomogeneous initial optical vortex density

    CSIR Research Space (South Africa)

    Roux, FS

    2011-04-01

    Full Text Available . However, the decay curves contain oscillatory features that are counterintuitive: for a short while, the inhomogeneity actually increases. The author provides numerical simulations and analytic calculations to study the appearance of the anomalous features...

  7. Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems

    International Nuclear Information System (INIS)

    Bulgadaev, S.A.; Kusmartsev, F.V.

    2005-01-01

    Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag 2+δ Se. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures

  8. Investigation of local optical inhomogeneities in flashlamp photolysis lasers

    Energy Technology Data Exchange (ETDEWEB)

    Alekhin, B V; Borovkov, V V; Lazhintsev, B V; Nor-Arenian, V A; Sukhanov, L V; Ustinenko, V A

    1979-09-01

    Local changes in the refractive index which occur in the active medium under flashlamp-excited photolysis laser action are examined experimentally. Under conditions of the inverse population storage and suppression of the laser action by a strong quencher, local inhomogeneities have been absent. It is shown that the stimulated emission is inhomogeneous over the active medium and features regular character with the radiation density modulation within 20-30 percent and with typical size of inhomogeneities of not greater than 0.5 mm. On the basis of experimental results and estimation, a conclusion is drawn that the local optical inhomogeneities are caused by gasdynamic displacements of the gas due to different heat evolutions in the regions of the radiation density maximum and minimum.

  9. Spatial Landau-Zener-Stueckelberg interference in spinor Bose-Einstein condensates

    International Nuclear Information System (INIS)

    Zhang, J.-N.; Sun, C.-P.; Yi, S.; Nori, Franco

    2011-01-01

    We investigate the Stueckelberg oscillations of a spin-1 Bose-Einstein condensate subject to a spatially inhomogeneous transverse magnetic field and a periodic longitudinal field. We show that the time-domain Stueckelberg oscillations result in modulations in the density profiles of all spin components due to the spatial inhomogeneity of the transverse field. This phenomenon represents the Landau-Zener-Stueckelberg interference in the space domain. Since the magnetic dipole-dipole interaction between spin-1 atoms induces an inhomogeneous effective magnetic field, interference fringes also appear if a dipolar spinor condensate is driven periodically. We also point out some potential applications of this spatial Landau-Zener-Stuekelberg interference.

  10. Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

    Science.gov (United States)

    Brezeanu, G.; Pristavu, G.; Draghici, F.; Badila, M.; Pascu, R.

    2017-08-01

    In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high-temperature evaluation of SiC Schottky contacts, with discrete barrier height non-uniformity, is introduced in order to determine the temperature interval and bias domain where electrical behavior of the devices can be described by the thermionic emission theory (has a quasi-ideal performance). A minimal set of parameters, the effective barrier height and peff, the non-uniformity factor, is associated. Model-extracted parameters are discussed in comparison with literature-reported results based on existing inhomogeneity approaches, in terms of complexity and physical relevance. Special consideration was given to models based on a Gaussian distribution of barrier heights on the contact surface. The proposed methodology is validated by electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC), where a discrete barrier distribution can be considered. The same method is applied to inhomogeneous Pt/4H-SiC contacts. The forward characteristics measured at different temperatures are accurately reproduced using this inhomogeneous barrier model. A quasi-ideal behavior is identified for intervals spanning 200 °C for all measured Schottky samples, with Ni and Pt contact metals. A predictable exponential current-voltage variation over at least 2 orders of magnitude is also proven, with a stable barrier height and effective area for temperatures up to 400 °C. This application-oriented characterization technique is confirmed by using model parameters to fit a SiC-Schottky high temperature sensor's response.

  11. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  12. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  13. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  14. Detection of Buried Inhomogeneous Elliptic Cylinders by a Memetic Algorithm

    OpenAIRE

    Caorsi, Salvatore; Massa, Andrea; Pastorino, Matteo; Raffetto, Mirco; Randazzo, Andrea

    2003-01-01

    The application of a global optimization procedure to the detection of buried inhomogeneities is studied in the present paper. The object inhomogeneities are schematized as multilayer infinite dielectric cylinders with elliptic cross sections. An efficient recursive analytical procedure is used for the forward scattering computation. A functional is constructed in which the field is expressed in series solution of Mathieu functions. Starting by the input scattered data, the iterative minimiza...

  15. Nonlinear interaction of waves in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Istomin, Ya.N.

    1988-01-01

    Nonlinear wave processes in a weakly inhomogeneous plasma are considered. A quasilinear equation is derived which takes into account the effect of the waves on resonance particles, provided that the inhomogeneity appreciably affects the nature of the resonance interaction. Three-wave interaction is investigated under the same conditions. As an example, the nonlinear interaction in a relativistic plasma moving along a strong curvilinear magnetic field is considered

  16. Radio frequency conductivity of plasma in inhomogeneous magnetic field

    International Nuclear Information System (INIS)

    Itoh, Sanae; Nishikawa, Kyoji; Fukuyama, Atsushi; Itoh, Kimitaka.

    1985-01-01

    Nonlocal conductivity tensor is obtained to study the kinetic effects on propagation and absorption of radio frequency (rf) waves in dispersive plasmas. Generalized linear propagator in the presence of the inhomogeneity of magnetic field strength along the field line is calculated. The influence of the inhomogeneity to the rf wave-energy deposition is found to be appreciable. Application to toroidal plasmas is shown. (author)

  17. Polymers undergoing inhomogeneous adsorption: exact results and Monte Carlo simulations

    Energy Technology Data Exchange (ETDEWEB)

    Iliev, G K [Department of Mathematics, University of Melbourne, Parkville, Victoria (Australia); Orlandini, E [Dipartimento di Fisica, CNISM, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy); Whittington, S G, E-mail: giliev@yorku.ca [Department of Chemistry, University of Toronto, Toronto (Canada)

    2011-10-07

    We consider several types of inhomogeneous polymer adsorption. In each case, the inhomogeneity is regular and resides in the surface, in the polymer or in both. We consider two different polymer models: a directed walk model that can be solved exactly and a self-avoiding walk model which we investigate using Monte Carlo methods. In each case, we compute the phase diagram. We compare and contrast the phase diagrams and give qualitative arguments about their forms. (paper)

  18. Solitons of an envelope in an inhomogeneous medium

    International Nuclear Information System (INIS)

    Churilov, S.M.

    1982-01-01

    Solutions of the Schroedinger nonlinear equation (SNE) used for the description of evolution of a wave packet envelope has been investigated in inhomogeneous and nonstationary media. It is shown that the SNE solution possessing two important properties exists. Firstly, the wave packet remains localized when propagating in an inhomogeneous medium. Secondly, the soliton width and amplitude are determined only with local characteristics of medium and don't depend on the prehistory. Problem of limits of obtained result applicability has been considered

  19. Off-center observers versus supernovae in inhomogeneous pressure universes

    OpenAIRE

    Balcerzak, Adam; Dabrowski, Mariusz P.; Denkiewicz, Tomasz

    2013-01-01

    Exact luminosity distance and apparent magnitude formulas are applied to Union2 557 supernovae sample in order to constrain possible position of an observer outside of the center of symmetry in spherically symmetric inhomogeneous pressure Stephani universes which are complementary to inhomogeneous density Lema\\^itre-Tolman-Bondi (LTB) void models. Two specific models are investigated. The first which allows a barotropic equation of state at the center of symmetry with no scale factor function...

  20. Love waves in a structure with an inhomogeneous layer

    International Nuclear Information System (INIS)

    Ghazaryan, K.B.; Piliposyan, D.G.

    2011-01-01

    The problem of the propagation of Love type waves in a structure consisting of a finite inhomogeneous layer sandwiched between two isotropic homogeneous half spaces is investigated. Two types of inhomogeneity are considered. It is shown that in one case the amplitude of vibrations in the middle layer is a sinusoidal function of distance from the plane of symmetry, but that in the other case it may be non-sinusoidal for certain values of the parameters of the problem

  1. Minimum weight design of inhomogeneous rotating discs

    International Nuclear Information System (INIS)

    Jahed, Hamid; Farshi, Behrooz; Bidabadi, Jalal

    2005-01-01

    There are numerous applications for gas turbine discs in the aerospace industry such as in turbojet engines. These discs normally work under high temperatures while subjected to high angular velocities. Minimizing the weight of such items in aerospace applications results in benefits such as low dead weights and lower costs. High speed of rotation causes large centrifugal forces in a disc and simultaneous application of high temperatures reduces disc material strength. Thus, the latter effects tend to increase deformations of the disc under the applied loads. In order to obtain a reliable disc analysis and arrive at the corresponding correct stress distribution, solutions should consider changes in material properties due to the temperature field throughout the disc. To achieve this goal, an inhomogeneous disc model with variable thickness is considered. Using the variable material properties method, stresses are obtained for the disc under rotation and a steady temperature field. In this paper this is done by modelling the rotating disc as a series of rings of different but constant properties. The optimum disc profile is arrived at by sequentially proportioning the thicknesses of each ring to satisfy the stress requirements. This method vis-a-vis a mathematical programming procedure for optimization shows several advantages. Firstly, it is simple iterative proportioning in each design cycle not requiring involved mathematical operations. Secondly, due to its simplicity it alleviates the necessity of certain simplifications that are common in so-called rigorous mathematical procedures. The results obtained, compared to those published in the literature show agreement and superiority. A further advantage of the proposed method is the independence of the end results from the initially assumed point in the iterative design routine, unlike most methods published so far

  2. Gradient effects on the fracture of inhomogeneous materials

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Terrence Lee [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    Functionally Graded Materials (FGMs) have a spatial variation in physical properties that can be tailored to meet the needs of a specific application and/or to minimize internal stresses arising from thermal and elastic mismatch. Modeling these materials as inhomogeneous continua allows assessment of the role of the gradient without requiring detailed knowledge of the microstructure. Motivated by the relative difficulty of obtaining analytical solutions to boundary value problems for FGMs, an accurate finite-element code is developed for obtaining numerical planar and axisymmetric linear thermoelastic solutions. In addition an approximate analytical technique for mapping homogeneous-modulus solutions to those for FGMs is assessed and classes of problems to which it applies accurately are identified. The fracture mechanics analysis of FGMs can be characterized by the classic stress intensities, KI and KII, but there has been scarce progress in understanding the role of the modulus gradient in determining fracture initiation and propagation. To address this question, a statistical fracture model is used to correlate near-tip stresses with brittle fracture initiation behavior. This describes the behavior of a material experiencing fracture initiation away from the crack tip. Widely dispersed zones of fracture initiation sites are expected. Finite-length kinks are analyzed to describe the crack path for continuous crack growth. For kink lengths much shorter than the gradient dimension, a parallel stress term describes the deviation of the kinking angle from that for homogeneous materials. For longer kinks there is a divergence of the kink angle predicted by the maximum energy release rate and the pure opening mode criteria.

  3. Inhomogeneous initial data and small-field inflation

    Science.gov (United States)

    Marsh, M. C. David; Barrow, John D.; Ganguly, Chandrima

    2018-05-01

    We consider the robustness of small-field inflation in the presence of scalar field inhomogeneities. Previous numerical work has shown that if the scalar potential is flat only over a narrow interval, such as in commonly considered inflection-point models, even small-amplitude inhomogeneities present at the would-be onset of inflation at τ = τi can disrupt the accelerated expansion. In this paper, we parametrise and evolve the inhomogeneities from an earlier time τIC at which the initial data were imprinted, and show that for a broad range of inflationary and pre-inflationary models, inflection-point inflation withstands initial inhomogeneities. We consider three classes of perturbative pre-inflationary solutions (corresponding to energetic domination by the scalar field kinetic term, a relativistic fluid, and isotropic negative curvature), and two classes of exact solutions to Einstein's equations with large inhomogeneities (corresponding to a stiff fluid with cylindrical symmetry, and anisotropic negative curvature). We derive a stability condition that depends on the Hubble scales H(τi) and H(τIC), and a few properties of the pre-inflationary cosmology. For initial data imprinted at the Planck scale, the absence of an inhomogeneous initial data problem for inflection-point inflation leads to a novel, lower limit on the tensor-to-scalar ratio.

  4. Comparison study of different head model structures with homogeneous/inhomogeneous conductivity

    International Nuclear Information System (INIS)

    Wen, P.; Li, Y.

    2001-01-01

    Most of the human head models used in dipole localisation research, which have been reported in the literature to date, assume a simplified cranial structure wherein the head is modelled as a set of distinct homogenous tissue compartments. The inherent inhomogeneity of the tissues has so far been ignored in these models due to the difficulties involved in obtaining the conductivity characteristics with sufficiently high enough spatial resolution throughout the head. A technique for developing an inhomogeneous head model based on the generation of pseudo-conductivity values from the existing but sparse conductivity values is proposed in this paper. Comparative studies are conducted on different model structures and different mechanisms for generating the pseudo conductivities. An evaluation of the results of these studies as reported in this paper, shows that contrary to current simplifying assumptions, tissue inhomogeneity has a major influence on the computation of electrical potential distributions in the head. Brain electrical activity is spatially distributed in three dimensions in the head and evolves with time. Electroencephalography (EEG) is a widely used noninvasive technique which measures the potential distribution on the scalp caused by the brain electrical activity. A number of interesting correlations between features of the recorded EEG waveforms and various aspects of attention memory and linguistic tAS/Ks have been discovered. These correlations are estimated by comparing, for a given brain function, the recorded EEGs against the scalp potentials obtained from the computation of an electric field model of the head. The accuracy of these estimates depends not only on such factors as EEG measured errors but also, more importantly, on how closely the head model approximates the physiological head. This has spurred interest in the use of a more realistic head geometry with more accurate conductivity values which would use the detailed anatomical

  5. The basics of experimental determination of the Fano factor in intrinsic semiconductors

    International Nuclear Information System (INIS)

    Samedov, Victor-V.

    2013-06-01

    Intrinsic semiconductors such as High Purity Germanium Detectors are exceptional X-ray and gamma-ray detectors because of their large sizes and small band gap. They are used for fundamental scientific researches, nuclear material safeguards and security, environmental protection, and human health and safety. The fundamental limit of the energy resolution of a semiconductor detector is determined by variance in the number of electron-hole pairs produced by X-rays in detector volume. The principal characteristic of material for using as semiconductor detector is the Fano factor that determines the fluctuation in the number of electron-hole pairs. Now, all existing methods of experimental determination of the Fano factor in semiconductors are based on the subtraction of electronic noise from the signal variance. In this work, I propose the method of experimental determination of the Fano factor in a planar semiconductor detector based on dependences of the mean amplitude and the energy resolution on the electric field. It was shown that inverse electric field expansion of these dependences allow determining the Fano factor, electron mobility lifetime product, and relative variance of electron lifetime due to inhomogeneous charge transport in semiconductor material. The important advantage of the proposed method is independence on detector electronic noise. (authors)

  6. METHODOLOGICAL NOTES: Integrating magnetism into semiconductor electronics

    Science.gov (United States)

    Zakharchenya, Boris P.; Korenev, Vladimir L.

    2005-06-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

  7. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Biber, M

    2003-01-01

    The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

  8. Nanopatterned organic semiconductors for visible light communications

    Science.gov (United States)

    Yang, Xilu; Dong, Yurong; Zeng, Pan; Yu, Yan; Xie, Yujun; Gong, Junyi; Shi, Meng; Liang, Rongqing; Ou, Qiongrong; Chi, Nan; Zhang, Shuyu

    2018-03-01

    Visible light communication (VLC) is becoming an important and promising supplement to the existing Wi-Fi network for the coming 5G communications. Organic light-emitting semiconductors present much fast fluorescent decay rates compared to those of conventional colour-converting phosphors, therefore capable of achieving much higher bandwidths. Here we explore how nanopatterned organic semiconductors can further enhance the data rates of VLC links by improving bandwidths and signal-to-noise ratios (SNRs) and by supporting spatial multiplexing. We first demonstrate a colour-converting VLC system based on nanopatterned hyperbolic metamaterials (HMM), the bandwidth of which is enhanced by 50%. With regard to enhancing SNRs, we achieve a tripling of optical gain by integrating a nanopatterned luminescent concentrator to a signal receiver. In addition, we demonstrate highly directional fluorescent VLC antennas based on nanoimprinted polymer films, paving the way to achieving parallel VLC communications via spatialmultiplexing. These results indicate nanopatterned organic semiconductors provide a promising route to high speed VLC links.

  9. Inhomogeneities detection in annual precipitation time series in Portugal using direct sequential simulation

    Science.gov (United States)

    Caineta, Júlio; Ribeiro, Sara; Costa, Ana Cristina; Henriques, Roberto; Soares, Amílcar

    2014-05-01

    Climate data homogenisation is of major importance in monitoring climate change, the validation of weather forecasting, general circulation and regional atmospheric models, modelling of erosion, drought monitoring, among other studies of hydrological and environmental impacts. This happens because non-climate factors can cause time series discontinuities which may hide the true climatic signal and patterns, thus potentially bias the conclusions of those studies. In the last two decades, many methods have been developed to identify and remove these inhomogeneities. One of those is based on geostatistical simulation (DSS - direct sequential simulation), where local probability density functions (pdf) are calculated at candidate monitoring stations, using spatial and temporal neighbouring observations, and then are used for detection of inhomogeneities. This approach has been previously applied to detect inhomogeneities in four precipitation series (wet day count) from a network with 66 monitoring stations located in the southern region of Portugal (1980-2001). This study revealed promising results and the potential advantages of geostatistical techniques for inhomogeneities detection in climate time series. This work extends the case study presented before and investigates the application of the geostatistical stochastic approach to ten precipitation series that were previously classified as inhomogeneous by one of six absolute homogeneity tests (Mann-Kendall test, Wald-Wolfowitz runs test, Von Neumann ratio test, Standard normal homogeneity test (SNHT) for a single break, Pettit test, and Buishand range test). Moreover, a sensibility analysis is implemented to investigate the number of simulated realisations that should be used to accurately infer the local pdfs. Accordingly, the number of simulations per iteration is increased from 50 to 500, which resulted in a more representative local pdf. A set of default and recommended settings is provided, which will help

  10. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  11. Phase-space analysis of the Schwinger effect in inhomogeneous electromagnetic fields

    Science.gov (United States)

    Kohlfürst, Christian

    2018-05-01

    Schwinger pair production in spatially and temporally inhomogeneous electric and magnetic fields is studied. The focus is on the particle phase-space distribution within a high-intensity few-cycle pulse. Accurate numerical solutions of a quantum kinetic theory (DHW formalism) are presented in momentum space and, with the aid of coarse-graining techniques, in a mixed spatial-momentum representation. Additionally, signatures of the carrier-envelope phase as well as spin-field interactions are discussed on the basis of a trajectory-based model taking into account instantaneous pair production and relativistic single-particle dynamics. Although our simple semi-classical single-particle model cannot describe every aspect of the particle production process (quantum interferences), essential features such as spin-field interactions are captured.

  12. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  13. SECTIONING METHOD APPLICATION AT ELLIPSOMETRY OF INHOMOGENEOUS REFLECTION SYSTEMS

    Directory of Open Access Journals (Sweden)

    A. N. Gorlyak

    2014-05-01

    Full Text Available The paper deals with investigation of application peculiarities of ellipsometry methods and UF spectrophotometry at mechanical and chemical processing of optical engineering surface elements made of quartz glass. Ellipsometer LEF–3M–1, spectrophotometer SF–26 and interferometer MII–4 are used as experiment tools; they obtain widely known technical characteristics. Polarization characteristics of reflected light beam were measured by ellipsometry method; spectrophotometry method was used for measuring radiation transmission factor in UF spectrum area; by interference method surface layer thickness at quartz glass etching was measured. A method for HF–sectioning of inhomogeneous surface layer of polished quartz glass is developed based on ellipsometry equation for reflection system «inhomogeneous layer – inhomogeneous padding». The method makes it possible to carry out the measuring and analysis of optical characteristics for inhomogeneous layers system on inhomogeneous padding and to reconstruct optical profile of surface layers at quartz glass chemical processing. For definition of refractive index change along the layer depth, approximation of experimental values for polarization characteristics of homogeneous layers system is used. Inhomogeneous surface layer of polished quartz glass consists of an area (with thickness up to 20 nm and layer refractive index less than refractive index for quartz glass and an area (with thickness up to 0,1 μm and layer refractive index larger than refractive index for quartz glass. Ellipsometry and photometry methods are used for definition of technological conditions and optical characteristics of inhomogeneous layers at quartz glass chemical processing for optical elements with minimum radiation losses in UF spectrum area.

  14. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  15. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  16. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  17. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  18. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  19. Interlayer excitons in a bulk van der Waals semiconductor

    DEFF Research Database (Denmark)

    Arora, Ashish; Drueppel, Matthias; Schmidt, Robert

    2017-01-01

    Bound electron-hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose-Einstein condensation, superfluidity......, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments...

  20. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  1. Programmable and coherent crystallization of semiconductors

    KAUST Repository

    Yu, Liyang

    2017-03-04

    The functional properties and technological utility of polycrystalline materials are largely determined by the structure, geometry, and spatial distribution of their multitude of crystals. However, crystallization is seeded through stochastic and incoherent nucleation events, limiting the ability to control or pattern the microstructure, texture, and functional properties of polycrystalline materials. We present a universal approach that can program the microstructure of materials through the coherent seeding of otherwise stochastic homogeneous nucleation events. The method relies on creating topographic variations to seed nucleation and growth at designated locations while delaying nucleation elsewhere. Each seed can thus produce a coherent growth front of crystallization with a geometry designated by the shape and arrangement of seeds. Periodic and aperiodic crystalline arrays of functional materials, such as semiconductors, can thus be created on demand and with unprecedented sophistication and ease by patterning the location and shape of the seeds. This approach is used to demonstrate printed arrays of organic thin-film transistors with remarkable performance and reproducibility owing to their demonstrated spatial control over the microstructure of organic and inorganic polycrystalline semiconductors.

  2. General formalism for partial spatial coherence in reflection Mueller matrix polarimetry.

    Science.gov (United States)

    Ossikovski, Razvigor; Hingerl, Kurt

    2016-09-01

    Starting from the first principles, we derive the expressions governing partially coherent Mueller matrix reflection polarimetry on spatially inhomogeneous samples. These are reported both in their general form and in the practically important specific form for two juxtaposed media.

  3. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  4. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  5. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  6. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  7. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  8. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  9. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  10. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  11. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  12. Slow light and pulse propagation in semiconductor waveguides

    DEFF Research Database (Denmark)

    Hansen, Per Lunnemann

    This thesis concerns the propagation of optical pulses in semiconductor waveguide structures with particular focus on methods for achieving slow light or signal delays. Experimental pulse propagation measurements of pulses with a duration of 180 fs, transmitted through quantum well based waveguide...... structures, are presented. Simultaneous measurements of the pulse transmission and delay are measured as a function of input pulse energy for various applied electrical potentials. Electrically controlled pulse delay and advancement are demonstrated and compared with a theoretical model. The limits...... of the model as well as the underlying physical mechanisms are analysed and discussed. A method to achieve slow light by electromagnetically induced transparency (EIT) in an inhomogeneously broadened quantum dot medium is proposed. The basic principles of EIT are assessed and the main dissimilarities between...

  13. Charge separation sensitized by advanced II-VI semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kelley, David F. [Univ.of California, Merced, CA (United States)

    2017-04-11

    This proposal focuses on how the composition and morphology of pure and alloyed II-VI semiconductor heterostructures control their spectroscopic and dynamical properties. The proposed research will use a combination of synthesis development, electron microscopy, time-resolved electronic spectroscopy and modeling calculations to study these nanostructures. The proposed research will examine the extent to which morphology, compression due to lattice mismatch and alloy effects can be used to tune the electron and hole energies and the spectroscopic properties of II-VI heterojunctions. It will also use synthesis, optical spectroscopy and HRTEM to examine the role of lattice mismatch and hence lattice strain in producing interfacial defects, and the extent to which defect formation can be prevented by controlling the composition profile through the particles and across the interfaces. Finally, we will study the magnitude of the surface roughness in core/shell nanostructures and the role of shell thickness variability on the inhomogeneity of interfacial charge transfer rates.

  14. A study of low-dimensional inhomogeneous systems

    International Nuclear Information System (INIS)

    Arredondo Leon, Yesenia

    2009-01-01

    While the properties of homogeneous one-dimensional systems, even with disorder, are relatively well-understood, very little is known about the properties of strongly interacting inhomogeneous systems. Their high-energy physics is determined by the underlying chemistry which, in the atomic scale, introduces Coulomb correlations and local potentials. On the other hand, at large length scales, the physics has to be described by the Tomonaga-Luttinger liquid (TLL) model. In order to establish a connection between the low-energy TLL and the quasi-one-dimensional systems synthesized in the laboratory, we investigate the density-density correlation function in inhomogeneous one-dimensional systems in the asymptotic region. To investigate homogeneous as well as inhomogeneous systems, we use the density-matrix renormalization group (DMRG) method. We present results for ground state properties, such as the density-density correlation function and the parameter K c , which characterizes its decay at large distances. (orig.)

  15. Time-dependent inhomogeneous jet models for BL Lac objects

    Science.gov (United States)

    Marlowe, A. T.; Urry, C. M.; George, I. M.

    1992-05-01

    Relativistic beaming can explain many of the observed properties of BL Lac objects (e.g., rapid variability, high polarization, etc.). In particular, the broadband radio through X-ray spectra are well modeled by synchrotron-self Compton emission from an inhomogeneous relativistic jet. We have done a uniform analysis on several BL Lac objects using a simple but plausible inhomogeneous jet model. For all objects, we found that the assumed power-law distribution of the magnetic field and the electron density can be adjusted to match the observed BL Lac spectrum. While such models are typically unconstrained, consideration of spectral variability strongly restricts the allowed parameters, although to date the sampling has generally been too sparse to constrain the current models effectively. We investigate the time evolution of the inhomogeneous jet model for a simple perturbation propagating along the jet. The implications of this time evolution model and its relevance to observed data are discussed.

  16. Solutions of the chemical kinetic equations for initially inhomogeneous mixtures.

    Science.gov (United States)

    Hilst, G. R.

    1973-01-01

    Following the recent discussions by O'Brien (1971) and Donaldson and Hilst (1972) of the effects of inhomogeneous mixing and turbulent diffusion on simple chemical reaction rates, the present report provides a more extensive analysis of when inhomogeneous mixing has a significant effect on chemical reaction rates. The analysis is then extended to the development of an approximate chemical sub-model which provides much improved predictions of chemical reaction rates over a wide range of inhomogeneities and pathological distributions of the concentrations of the reacting chemical species. In particular, the development of an approximate representation of the third-order correlations of the joint concentration fluctuations permits closure of the chemical sub-model at the level of the second-order moments of these fluctuations and the mean concentrations.

  17. A study of low-dimensional inhomogeneous systems

    Energy Technology Data Exchange (ETDEWEB)

    Arredondo Leon, Yesenia

    2009-01-15

    While the properties of homogeneous one-dimensional systems, even with disorder, are relatively well-understood, very little is known about the properties of strongly interacting inhomogeneous systems. Their high-energy physics is determined by the underlying chemistry which, in the atomic scale, introduces Coulomb correlations and local potentials. On the other hand, at large length scales, the physics has to be described by the Tomonaga-Luttinger liquid (TLL) model. In order to establish a connection between the low-energy TLL and the quasi-one-dimensional systems synthesized in the laboratory, we investigate the density-density correlation function in inhomogeneous one-dimensional systems in the asymptotic region. To investigate homogeneous as well as inhomogeneous systems, we use the density-matrix renormalization group (DMRG) method. We present results for ground state properties, such as the density-density correlation function and the parameter K{sub c}, which characterizes its decay at large distances. (orig.)

  18. Dynamic response of interacting one-dimensional fermions in the harmonic atom trap: Phase response and the inhomogeneous mobility

    International Nuclear Information System (INIS)

    Wonneberger, W.

    2006-01-01

    The problem of the Kohn mode in bosonized theories of one-dimensional interacting fermions in the harmonic trap is investigated and a suitable modification of the interaction is proposed which preserves the Kohn mode. The modified theory is used to calculate exactly the inhomogeneous linear mobility μ(z,z 0 ;ω) at position z in response to a spatial force pulse at position z 0 . It is found that the inhomogeneous particle mobility exhibits resonances not only at the trap frequency ω - bar but also at multiples mε-bar , m=2,3,... of a new renormalized collective mode frequency which depends on the strength of the interaction. In contrast, the homogeneous response obtained by an average over z 0 remains that of the non-interacting system

  19. Two-point paraxial traveltime formula for inhomogeneous isotropic and anisotropic media: Tests of accuracy

    KAUST Repository

    Waheed, Umair bin; Psencik, Ivan; Cerveny, Vlastislav; Iversen, Einar; Alkhalifah, Tariq Ali

    2013-01-01

    On several simple models of isotropic and anisotropic media, we have studied the accuracy of the two-point paraxial traveltime formula designed for the approximate calculation of the traveltime between points S' and R' located in the vicinity of points S and R on a reference ray. The reference ray may be situated in a 3D inhomogeneous isotropic or anisotropic medium with or without smooth curved interfaces. The twopoint paraxial traveltime formula has the form of the Taylor expansion of the two-point traveltime with respect to spatial Cartesian coordinates up to quadratic terms at points S and R on the reference ray. The constant term and the coefficients of the linear and quadratic terms are determined from quantities obtained from ray tracing and linear dynamic ray tracing along the reference ray. The use of linear dynamic ray tracing allows the evaluation of the quadratic terms in arbitrarily inhomogeneous media and, as shown by examples, it extends the region of accurate results around the reference ray between S and R (and even outside this interval) obtained with the linear terms only. Although the formula may be used for very general 3D models, we concentrated on simple 2D models of smoothly inhomogeneous isotropic and anisotropic (~8% and ~20% anisotropy) media only. On tests, in which we estimated twopoint traveltimes between a shifted source and a system of shifted receivers, we found that the formula may yield more accurate results than the numerical solution of an eikonal-based differential equation. The tests also indicated that the accuracy of the formula depends primarily on the length and the curvature of the reference ray and only weakly depends on anisotropy. The greater is the curvature of the reference ray, the narrower its vicinity, in which the formula yields accurate results.

  20. Two-point paraxial traveltime formula for inhomogeneous isotropic and anisotropic media: Tests of accuracy

    KAUST Repository

    Waheed, Umair bin

    2013-09-01

    On several simple models of isotropic and anisotropic media, we have studied the accuracy of the two-point paraxial traveltime formula designed for the approximate calculation of the traveltime between points S\\' and R\\' located in the vicinity of points S and R on a reference ray. The reference ray may be situated in a 3D inhomogeneous isotropic or anisotropic medium with or without smooth curved interfaces. The twopoint paraxial traveltime formula has the form of the Taylor expansion of the two-point traveltime with respect to spatial Cartesian coordinates up to quadratic terms at points S and R on the reference ray. The constant term and the coefficients of the linear and quadratic terms are determined from quantities obtained from ray tracing and linear dynamic ray tracing along the reference ray. The use of linear dynamic ray tracing allows the evaluation of the quadratic terms in arbitrarily inhomogeneous media and, as shown by examples, it extends the region of accurate results around the reference ray between S and R (and even outside this interval) obtained with the linear terms only. Although the formula may be used for very general 3D models, we concentrated on simple 2D models of smoothly inhomogeneous isotropic and anisotropic (~8% and ~20% anisotropy) media only. On tests, in which we estimated twopoint traveltimes between a shifted source and a system of shifted receivers, we found that the formula may yield more accurate results than the numerical solution of an eikonal-based differential equation. The tests also indicated that the accuracy of the formula depends primarily on the length and the curvature of the reference ray and only weakly depends on anisotropy. The greater is the curvature of the reference ray, the narrower its vicinity, in which the formula yields accurate results.

  1. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  2. Evaluation of efficiency of a semiconductor gamma camera

    CERN Document Server

    Otake, H; Takeuchi, Y

    2002-01-01

    We evaluation basic characteristics of a compact type semiconductor gamma camera (eZ-SCOPE AN) of Cadmium Zinc Telluride (CdZnTe). This new compact gamma camera has 256 semiconductors representing the same number of pixels. Each semiconductor is 2 mm square and is located in 16 lines and rows on the surface of the detector. The specific performance characteristics were evaluated in the study referring to National Electrical Manufactures Association (NEMA) standards; intrinsic energy resolution, intrinsic count rate performance, integral uniformity, system planar sensitivity, system spatial resolution, and noise to the neighboring pixels. The intrinsic energy resolution measured 5.7% as full width half maximum (FWHM). The intrinsic count rate performance ranging from 17 kcps to 1,285 kcps was evaluated, but the highest intrinsic count rate was not observed. Twenty percents count loss was recognized at 1,021 kcps. The integral uniformity was 1.3% with high sensitivity collimator. The system planar sensitivity w...

  3. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

    Science.gov (United States)

    Pierścińska, D.

    2018-01-01

    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  4. Brownian motion probe for water-ethanol inhomogeneous mixtures

    Science.gov (United States)

    Furukawa, Kazuki; Judai, Ken

    2017-12-01

    Brownian motion provides information regarding the microscopic geometry and motion of molecules, insofar as it occurs as a result of molecular collisions with a colloid particle. We found that the mobility of polystyrene beads from the Brownian motion in a water-ethanol mixture is larger than that predicted from the liquid shear viscosity. This indicates that mixing water and ethanol is inhomogeneous in micron-sized probe beads. The discrepancy between the mobility of Brownian motion and liquid mobility can be explained by the way the rotation of the beads in an inhomogeneous viscous solvent converts the translational movement.

  5. Transformation instability of oscillations in inhomogeneous beam-plasma system

    International Nuclear Information System (INIS)

    Kitsenko, A.B.

    1985-01-01

    Wave transformation is studied in a plasma system which was weak-inhomogeneous along beam velocity, in absence of external magnetic field. For the case of small density beam formulae are obtained which have set a coupling between the charge density beam wave amplitudes and the Langmuir wave on both sides of transformation point. It is shown that in collisionless plasma the wave production is a cause of the absorption of the charge density beam waves. Transformation mechanism of the absolute instability in the weak-inhomogeneous beam-plasma system is revealed

  6. Reflection of oblique electron thermal modes in an inhomogeneous plasma

    International Nuclear Information System (INIS)

    Ohnuma, T.; Watanabe, T.; Sanuki, H.

    1980-04-01

    In an inhomogeneous magnetoplasma, reflection of an oblique electron thermal mode radiated from a local source is investigated experimentally and theoretically near the electron plasma frequency layer. The experimental observation of reflection in the lower plasma density region than the f sub(p)-layer is found to be in qualitative accord with the theoretical reflection, which is obtained from a kinetic theory in an inhomogeneous magnetoplasma. The reflection of the thermal mode is also compared with that of an electromagnetic mode at the f sub(p)-layer. (author)

  7. Parallel application of plasma equilibrium fitting based on inhomogeneous platforms

    International Nuclear Information System (INIS)

    Liao Min; Zhang Jinhua; Chen Liaoyuan; Li Yongge; Pan Wei; Pan Li

    2008-01-01

    An online analysis and online display platform EFIT, which is based on the equilibrium-fitting mode, is inducted in this paper. This application can realize large data transportation between inhomogeneous platforms by designing a communication mechanism using sockets. It spends approximately one minute to complete the equilibrium fitting reconstruction by using a finite state machine to describe the management node and several node computers of cluster system to fulfill the parallel computation, this satisfies the online display during the discharge interval. An effective communication model between inhomogeneous platforms is provided, which could transport the computing results from Linux platform to Windows platform for online analysis and display. (authors)

  8. Baryon inhomogeneity from the cosmic quark-hadron phase transition

    International Nuclear Information System (INIS)

    Kurki-Suonio, H.

    1991-01-01

    We discuss the generation of inhomogeneity in the baryon-number density during the cosmic quark-hadron phase transition. We use a simple model with thin-wall phase boundaries and ideal-gas equations of state. The nucleation of the phase transition introduces a new distance scale into the universe which will be the scale of the generated inhomogeneity. We review the estimate of this scale. During the transition baryon number is likely to collect onto a layer at the phase boundary. These layers may in the end be deposited as small regions of very high baryon density. 21 refs., 1 fig

  9. Forces and energy dissipation in inhomogeneous non-equilibrium superconductors

    International Nuclear Information System (INIS)

    Poluehktov, Yu.M.; Slezov, V.V.

    1987-01-01

    The phenomenological theory of volume forces and dissipation processes in inhomogeneous non-equilibrium superconductors near temperature transition from the normal to superconducting state is constructed. The approach is based on application of dynamic equations of superconductivity formulated on the basis of the Lagrangian formalism. These equations are generalized the Ginzburg-Landau theory in the nonstationary non-equilibrium case for ''foul'' superconductors. The value estimations of volume forces arising in inhomogeneities during relaxation of an order parameter and when the electrical field is penetrated into the superconductor, are given

  10. Phase synchronization in inhomogeneous globally coupled map lattices

    International Nuclear Information System (INIS)

    Ho Mingchung; Hung Yaochen; Jiang, I-M.

    2004-01-01

    The study of inhomogeneous-coupled chaotic systems has attracted a lot of attention recently. With simple definition of phase, we present the phase-locking behavior in ensembles of globally coupled non-identical maps. The inhomogeneous globally coupled maps consist of logistic map and tent map simultaneously. Average phase synchronization ratios, which are used to characterize the phase coherent phenomena, depend on different coupling coefficients and chaotic parameters. By using interdependence, the relationship between a single unit and the mean field is illustrated. Moreover, we take the effect of external noise and parameter mismatch into consideration and present the results by numerical simulation

  11. Nonlinear acoustic waves in micro-inhomogeneous solids

    CERN Document Server

    Nazarov, Veniamin

    2014-01-01

    Nonlinear Acoustic Waves in Micro-inhomogeneous Solids covers the broad and dynamic branch of nonlinear acoustics, presenting a wide variety of different phenomena from both experimental and theoretical perspectives. The introductory chapters, written in the style of graduate-level textbook, present a review of the main achievements of classic nonlinear acoustics of homogeneous media. This enables readers to gain insight into nonlinear wave processes in homogeneous and micro-inhomogeneous solids and compare it within the framework of the book. The subsequent eight chapters covering: Physical m

  12. Dose inhomogeneities at various levels of biological organization

    International Nuclear Information System (INIS)

    Bond, V.P.

    1988-01-01

    Dose inhomogeneities in both tumor and normal tissue, inherent to the application of boron neutron capture therapy (BNCT), can be the result not only of ununiform distribution of 10 B at various levels of biological organization, but also of the distribution of the thermal neutrons and of the energy depositions from more energetic neutrons and other radiations comprising the externally-applied beams. The severity of the problems resulting from such inhomogeneities, and approaches to evaluating them, are illustrated by three examples, at the macro, micro and intermediate levels

  13. Ray tracing for inhomogeneous media applied to the human eye

    Science.gov (United States)

    Diaz-Gonzalez, G.; Iturbe-Castillo, M. D.; Juarez-Salazar, R.

    2017-08-01

    Inhomogeneous or gradient index media exhibit a refractive index varying with the position. This kind of media are very interesting because they can be found in both synthetic as well as real life optical devices such as the human lens. In this work we present the development of a computational tool for ray tracing in refractive optical systems. Particularly, the human eye is used as the optical system under study. An inhomogeneous medium with similar characteristics to the human lens is introduced and modeled by the so-called slices method. The useful of our proposal is illustrated by several graphical results.

  14. A new scheme for solving inhomogeneous Boltzmann equation for electrons in weakly ionised gases

    International Nuclear Information System (INIS)

    Mahmoud, M.O.M.; Yousfi, M.

    1995-01-01

    In the case of weakly ionized gases, the numerical treatment of non-hydrodynamic regime involving spatial variation of distribution function due to boundaries (walls, electrodes, electron source, etc hor-ellipsis) by using direct Boltzmann equation always constitute a challenge if the main collisional processes occurring in non thermal plasmas are to be considered (elastic, inelastic and super-elastic collisions, Penning ionisation, Coulomb interactions, etc hor-ellipsis). In the non-thermal discharge modelling, the inhomogeneous electron Boltzmann equation is needed in order to be coupled for example to a fluid model to take into account the electron non-hydrodynamic effects. This is for example the case of filamentary discharge, in which the space charge electric field due to streamer propagation has a very sharp spatial profile thus leading to important space non-hydrodynamic effects. It is also the case of the cathodic zone of glow discharge where electric field has a rapid spatial decrease until the negative glow. In the present work, a new numerical scheme is proposed to solve the inhomogeneous Boltzmann equation for electrons in the framework of two-term approximation (TTA) taking into account elastic and inelastic processes. Such a method has the usual drawbacks associated with the TTA i.e. not an accurate enough at high E/N values or in presence of high inelastic processes. But the accuracy of this method is considered sufficient because in a next step it is destinated to be coupled to fluid model for charged particles and a chemical kinetic model where the accuracy is of the same order of magnitude or worse. However there are numerous advantages of this method concerning time computing, treatment of non-linear collision processes (Coulomb, Penning, etc hor-ellipsis)

  15. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  16. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  17. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  18. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  19. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  20. Dependence of inhomogeneous vibrational linewidth broadening on attractive forces from local liquid number densities

    International Nuclear Information System (INIS)

    George, S.M.; Harris, C.B.

    1982-01-01

    The dependence of inhomogeneous vibrational linewidth broadening on attractive forces form slowly varying local liquid number densities is examined. The recently developed Schweizer--Chandler theory of vibrational dephasing is used to compute absolute inhomogeneous broadening linewidths. The computed linewidths are compared to measured inhomogeneous broadening linewidths determined using picosecond vibrational dephasing experiments. There is a similarity between correlations of the Schweizer--Chandler and George--Auweter--Harris predicted inhomogeneous broadening linewidths and the measured inhomogeneous broadening linewidths. For the methyl stretches under investigation, this correspondence suggests that the width of the number density distribution in the liquid determines the relative inhomogeneous broadening magnitudes

  1. Effect of Inhomogeneity correction for lung volume model in TPS

    International Nuclear Information System (INIS)

    Chung, Se Young; Lee, Sang Rok; Kim, Young Bum; Kwon, Young Ho

    2004-01-01

    The phantom that includes high density materials such as steel was custom-made to fix lung and bone in order to evaluation inhomogeneity correction at the time of conducting radiation therapy to treat lung cancer. Using this, values resulting from the inhomogeneous correction algorithm are compared on the 2 and 3 dimensional radiation therapy planning systems. Moreover, change in dose calculation was evaluated according to inhomogeneous by comparing with the actual measurement. As for the image acquisition, inhomogeneous correction phantom(Pig's vertebra, steel(8.21 g/cm 3 ), cork(0.23 g/cm 3 )) that was custom-made and the CT(Volume zoom, Siemens, Germany) were used. As for the radiation therapy planning system, Marks Plan(2D) and XiO(CMS, USA, 3D) were used. To compare with the measurement value, linear accelerator(CL/1800, Varian, USA) and ion chamber were used. Image, obtained from the CT was used to obtain point dose and dose distribution from the region of interest (ROI) while on the radiation therapy planning device. After measurement was conducted under the same conditions, value on the treatment planning device and measured value were subjected to comparison and analysis. And difference between the resulting for the evaluation on the use (or non-use) of inhomogeneity correction algorithm, and diverse inhomogeneity correction algorithm that is included in the radiation therapy planning device was compared as well. As result of comparing the results of measurement value on the region of interest within the inhomogeneity correction phantom and the value that resulted from the homogeneous and inhomogeneous correction, gained from the therapy planning device, margin of error of the measurement value and inhomogeneous correction value at the location 1 of the lung showed 0.8% on 2D and 0.5% on 3D. Margin of error of the measurement value and inhomogeneous correction value at the location 1 of the steel showed 12% on 2D and 5% on 3D, however, it is possible to

  2. Correlation between modulation structure and electronic inhomogeneity on Pb-doped Bi-2212 single crystals

    International Nuclear Information System (INIS)

    Sugimoto, A.; Kashiwaya, S.; Eisaki, H.; Yamaguchi, H.; Oka, K.; Kashiwaya, H.; Tsuchiura, H.; Tanaka, Y.

    2005-01-01

    The correlation between nanometer-size electronic states and surface structure is investigated by scanning tunneling microscopy/spectroscopy (STM/S) on Pb-doped Bi 2-x Pb x Sr 2 CaCu2O 8+y (Pb-Bi-2212) single crystals. The advantage of the Pb-Bi-2212 samples is that the modulation structure can be totally or locally suppressed depending on the Pb contents and annealing conditions. The superconducting gap (Δ) distribution on modulated Pb-Bi-2212 samples showed the lack of correlation with modulation structure except a slight reduction of superconducting island size for the b-axis direction. On the other hand, the optimal doped Pb-Bi-2212 (x = 0.6) samples obtained by reduced-annealing showed totally non-modulated structure in topography, however, the spatial distribution of Δ still showed inhomogeneity of which features were quite similar to those of modulated samples. These results suggest that the modulation structure is not the dominant origin of inhomogeneity although it modifies the streaky Δ structure sub-dominantly. From the gap structure variation around the border of narrow gap and broad gap regions, a trend of the coexistence of two separated phases i.e., superconducting phase and pseudogap like phase, is detected

  3. High precision stress measurements in semiconductor structures by Raman microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Uhlig, Benjamin

    2009-07-01

    Stress in silicon structures plays an essential role in modern semiconductor technology. This stress has to be measured and due to the ongoing miniaturization in today's semiconductor industry, the measuring method has to meet certain requirements. The present thesis deals with the question how Raman spectroscopy can be used to measure the state of stress in semiconductor structures. In the first chapter the relation between Raman peakshift and stress in the material is explained. It is shown that detailed stress maps with a spatial resolution close to the diffraction limit can be obtained in structured semiconductor samples. Furthermore a novel procedure, the so called Stokes-AntiStokes-Difference method is introduced. With this method, topography, tool or drift effects can be distinguished from stress related influences in the sample. In the next chapter Tip-enhanced Raman Scattering (TERS) and its application for an improvement in lateral resolution is discussed. For this, a study is presented, which shows the influence of metal particles on the intensity and localization of the Raman signal. A method to attach metal particles to scannable tips is successfully applied. First TERS scans are shown and their impact on and challenges for high resolution stress measurements on semiconductor structures is explained. (orig.)

  4. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  5. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  6. Inhomogeneous Spin Diffusion in Traps with Cold Atoms

    DEFF Research Database (Denmark)

    Heiselberg, Henning

    2012-01-01

    increases. The inhomogeneity and the smaller nite trap size signicantly reduce the spin diusion rate at low temperatures. The resulting spin diusion rates and spin drag at longer time scales are compatible with measurements at low to high temperatures for resonant attractive interactions...

  7. Motoneuron membrane potentials follow a time inhomogeneous jump diffusion process

    DEFF Research Database (Denmark)

    Jahn, Patrick; Berg, Rune W; Hounsgaard, Jørn

    2011-01-01

    models can only be applied over short time windows. However, experimental data show varying time constants, state dependent noise, a graded firing threshold and time-inhomogeneous input. In the present study we build a jump diffusion model that incorporates these features, and introduce a firing...

  8. Inhomogeneous generalizations of Bianchi type VIh models with perfect fluid

    Science.gov (United States)

    Roy, S. R.; Prasad, A.

    1991-07-01

    Inhomogeneous universes admitting an Abelian G2 of isometry and filled with perfect fluid have been derived. These contain as special cases exact homogeneous universes of Bianchi type VIh. Many of these universes asymptotically tend to homogeneous Bianchi VIh universes. The models have been discussed for their physical and kinematical behaviors.

  9. Material inhomogeneities and their evolution a geometric approach

    CERN Document Server

    Epstein, Marcelo

    2007-01-01

    Presents a unified treatment of the inhomogeneity theory using some of the tools of modern differential geometry. This book deals with the geometrical description of uniform bodies and their homogeneity conditions. It also develops a theory of material evolution and discusses its relevance in various applied contexts.

  10. Rate-optimal Bayesian intensity smoothing for inhomogeneous Poisson processes

    NARCIS (Netherlands)

    Belitser, E.N.; Serra, P.; van Zanten, H.

    2015-01-01

    We apply nonparametric Bayesian methods to study the problem of estimating the intensity function of an inhomogeneous Poisson process. To motivate our results we start by analyzing count data coming from a call center which we model as a Poisson process. This analysis is carried out using a certain

  11. Rate-optimal Bayesian intensity smoothing for inhomogeneous Poisson processes

    NARCIS (Netherlands)

    Belitser, E.; Andrade Serra, De P.J.; Zanten, van J.H.

    2013-01-01

    We apply nonparametric Bayesian methods to study the problem of estimating the intensity function of an inhomogeneous Poisson process. We exhibit a prior on intensities which both leads to a computationally feasible method and enjoys desirable theoretical optimality properties. The prior we use is

  12. Spherically symmetric inhomogeneous bianisotropic media: Wave propagation and light scattering

    DEFF Research Database (Denmark)

    Novitsky, Andrey; Shalin, Alexander S.; Lavrinenko, Andrei

    2017-01-01

    We develop a technique for finding closed-form expressions for electromagnetic fields in radially inhomogeneous bianisotropic media, both the solutions of the Maxwell equations and material tensors being defined by the set of auxiliary two-dimensional matrices. The approach is applied to determine...

  13. An algorithm of computing inhomogeneous differential equations for definite integrals

    OpenAIRE

    Nakayama, Hiromasa; Nishiyama, Kenta

    2010-01-01

    We give an algorithm to compute inhomogeneous differential equations for definite integrals with parameters. The algorithm is based on the integration algorithm for $D$-modules by Oaku. Main tool in the algorithm is the Gr\\"obner basis method in the ring of differential operators.

  14. Baryon inhomogeneities due to cosmic string wakes at the quark ...

    Indian Academy of Sciences (India)

    abundances of light elements if they persist up to the time of nucleosynthesis. These inhomogeneities ... the creation of compact baryon-rich objects as well as alter the abundances of light ele- ments if they persist up to the time ... The trajectories of collisionless particles bend while passing by the string. They overlap in the ...

  15. Energy transfer rates in inhomogeneous van der Waals clusters

    International Nuclear Information System (INIS)

    Desfrancois, C.; Schermann, J.P.

    1991-01-01

    The internal energy exchange inside an inhomogeneous van der Waals cluster are investigated by means of molecular dynamic calculations. The very long time scales for relaxation of the high frequency degrees of freedom are examined within the framework of Nekhoroshev's theorem. (orig.)

  16. Effect of Inhomogeneity of the Universe on a Gravitationally Bound ...

    Indian Academy of Sciences (India)

    2012-04-16

    Apr 16, 2012 ... on a gravitationally bound local system such as the solar system. We con- ... method to describe the large-scale inhomogeneity of the Universe. ..... is regular at the origin r = 0 where the central body is located, and that the test.

  17. Lower hybrid waves instability in a velocity–sheared inhomogenous ...

    African Journals Online (AJOL)

    An electrostatic linear kinetic analysis of velocity-sheared inhomogeneous charged dust streaming parallel to a magnetic field in plasma is presented. Excited mode and the growth rates are derived in the lower hybrid-like mode regime, with collisional effects included. In the case where the drift velocity u is very small the ...

  18. An inhomogeneous wave equation and non-linear Diophantine approximation

    DEFF Research Database (Denmark)

    Beresnevich, V.; Dodson, M. M.; Kristensen, S.

    2008-01-01

    A non-linear Diophantine condition involving perfect squares and arising from an inhomogeneous wave equation on the torus guarantees the existence of a smooth solution. The exceptional set associated with the failure of the Diophantine condition and hence of the existence of a smooth solution...

  19. Particle Production and Effective Thermalization in Inhomogeneous Mean Field Theory

    NARCIS (Netherlands)

    Aarts, G.; Smit, J.

    2000-01-01

    As a toy model for dynamics in nonequilibrium quantum field theory we consider the abelian Higgs model in 1+1 dimensions with fermions. In the approximate dynamical equations, inhomogeneous classical (mean) Bose fields are coupled to quantized fermion fields, which are treated with a mode function

  20. Cluster tails for critical power-law inhomogeneous random graphs

    NARCIS (Netherlands)

    van der Hofstad, R.; Kliem, S.; van Leeuwaarden, J.S.H.

    2018-01-01

    Recently, the scaling limit of cluster sizes for critical inhomogeneous random graphs of rank-1 type having finite variance but infinite third moment degrees was obtained in Bhamidi et al. (Ann Probab 40:2299–2361, 2012). It was proved that when the degrees obey a power law with exponent τ∈ (3 , 4)

  1. Jeans instability of an inhomogeneous streaming dusty plasma

    Indian Academy of Sciences (India)

    The dynamics of a self-gravitating unmagnetized, inhomogeneous, streaming dusty plasma is studied in the present work. The presence of the shear flow causes the coupling between gravitational and electrostatic forces. In the absence of self-gravity, the fluctuations in the plasma may grow at the expense of the density ...

  2. Acoustic Force Density Acting on Inhomogeneous Fluids in Acoustic Fields

    DEFF Research Database (Denmark)

    Karlsen, Jonas Tobias; Augustsson, Per; Bruus, Henrik

    2016-01-01

    , the theory predicts a relocation of the inhomogeneities into stable field-dependent configurations, which are qualitatively different from the horizontally layered configurations due to gravity. Experimental validation is obtained by confocal imaging of aqueous solutions in a glass-silicon microchip....

  3. Electron-Bernstein Waves in Inhomogeneous Magnetic Fields

    DEFF Research Database (Denmark)

    Armstrong, R. J.; Frederiksen, Å.; Pécseli, Hans

    1984-01-01

    The propagation of small amplitude electron-Bernstein waves in different inhomogeneous magnetic field geometries is investigated experimentally. Wave propagation towards both cut-offs and resonances are considered. The experimental results are supported by a numerical ray-tracing analysis. Spatia...

  4. Measurements of weak localization of graphene in inhomogeneous magnetic fields

    DEFF Research Database (Denmark)

    Lindvall, N.; Shivayogimath, Abhay; Yurgens, A.

    2015-01-01

    attribute this to the inhomogeneous field caused by vortices in the superconductor. The deviation, which depends on the carrier concentration in graphene, can be tuned by the gate voltage. In addition, collective vortex motion, known as vortex avalanches, is observed through magnetoresistance measurements...

  5. Multiple solutions for inhomogeneous nonlinear elliptic problems arising in astrophyiscs

    Directory of Open Access Journals (Sweden)

    Marco Calahorrano

    2004-04-01

    Full Text Available Using variational methods we prove the existence and multiplicity of solutions for some nonlinear inhomogeneous elliptic problems on a bounded domain in $mathbb{R}^n$, with $ngeq 2$ and a smooth boundary, and when the domain is $mathbb{R}_+^n$

  6. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  7. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  8. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  9. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  10. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  11. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  12. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  13. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  14. Observable relations in an inhomogeneous self-similar cosmology

    International Nuclear Information System (INIS)

    Wesson, P.S.

    1979-01-01

    An exact self-similar solution is taken in general relativity as a model for an inhomogeneous cosmology. The self-similarity property means (conceptually) that the model is scale-free and (mathematically) that its essential parameters are functions of only one dimensionless variable zeta (equivalentct/R, where R and t are distance and time coordinates and c is the velocity of light). It begins inhomogeneous (zeta=0 or t=0), and tends to a homogeneous Einstein--de Sitter type state as zeta (or t) →infinity. Such a model can be used (a) for evaluating the observational effects of a clumpy universe; (b) for studying astrophysical processes such as galaxy formation and the growth and decay of inhomogeneities in initially clumpy cosmologies; and (c) as a relativistic basis for cosmological models with extended clustering of the de Vaucouleurs and Peebles types. The model has two adjustable parameters, namely, the observer's coordinate zeta 0 and a constant α/sub s/ that fixes the effect of the inhomogeneity. Expressions are obtained for the redshift, Hubble parameter, deceleration parameter, magnitude-redshift relation, and (number density of objects) --redshift relation. Expected anisotropies in the 3 K microwave background are also examined. There is no conflict with observation if zeta 0 /α/sub s/> or approx. =10, and four tests of the model are suggested that can be used to further determine the acceptability of inhomogeneous cosmologies of this type. The ratio α/sub s//zeta 0 on presently available data is α/sub s//zeta 0 < or approx. =10% and this, loosely speaking, means that the universe at the present epoch is globally homogeneous to within about 10%

  15. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  16. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  17. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  18. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  19. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  20. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  1. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  2. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  3. Analysis of fluctuations in semiconductor devices

    Science.gov (United States)

    Andrei, Petru

    The random nature of ion implantation and diffusion processes as well as inevitable tolerances in fabrication result in random fluctuations of doping concentrations and oxide thickness in semiconductor devices. These fluctuations are especially pronounced in ultrasmall (nanoscale) semiconductor devices when the spatial scale of doping and oxide thickness variations become comparable with the geometric dimensions of devices. In the dissertation, the effects of these fluctuations on device characteristics are analyzed by using a new technique for the analysis of random doping and oxide thickness induced fluctuations. This technique is universal in nature in the sense that it is applicable to any transport model (drift-diffusion, semiclassical transport, quantum transport etc.) and it can be naturally extended to take into account random fluctuations of the oxide (trapped) charges and channel length. The technique is based on linearization of the transport equations with respect to the fluctuating quantities. It is computationally much (a few orders of magnitude) more efficient than the traditional Monte-Carlo approach and it yields information on the sensitivity of fluctuations of parameters of interest (e.g. threshold voltage, small-signal parameters, cut-off frequencies, etc.) to the locations of doping and oxide thickness fluctuations. For this reason, it can be very instrumental in the design of fluctuation-resistant structures of semiconductor devices. Quantum mechanical effects are taken into account by using the density-gradient model as well as through self-consistent Poisson-Schrodinger computations. Special attention is paid to the presenting of the technique in a form that is suitable for implementation on commercial device simulators. The numerical implementation of the technique is discussed in detail and numerous computational results are presented and compared with those previously published in literature.

  4. Rethinking the theoretical description of photoluminescence in compound semiconductors

    Science.gov (United States)

    Valkovskii, V.; Jandieri, K.; Gebhard, F.; Baranovskii, S. D.

    2018-02-01

    Semiconductor compounds, such as Ga(NAsP)/GaP or GaAsBi/GaAs, are in the focus of intensive research due to their unique features for optoelectronic devices. The optical spectra of compound semiconductors are strongly influenced by the random scattering potentials caused by compositional and structural disorder. The disorder potential is responsible for the red-shift (Stokes shift) of the photoluminescence (PL) peak and for the inhomogeneous broadening of the PL spectra. So far, the anomalous broadening of the PL spectra in Ga(NAsP)/GaP has been explained assuming two coexisting length scales of disorder. However, this interpretation appears in contradiction to the recently observed dependence of the PL linewidth on the excitation intensity. We suggest an alternative approach that describes the PL characteristics in the framework of a model with a single length scale of disorder. The price is the assumption of two types of localized states with different, temperature-dependent non-radiative recombination rates.

  5. Electrothermal Simulation of Large-Area Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    C Kirsch

    2017-06-01

    Full Text Available The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006. The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results (Slawinski et al., 2011. We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method.

  6. Modelling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

    International Nuclear Information System (INIS)

    Morozovska, Anna N; Eliseev, Eugene A

    2004-01-01

    We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have modified the Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic values and the various hysteresis-loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films

  7. Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells

    Directory of Open Access Journals (Sweden)

    Andrey A. Chernyuk

    2006-02-01

    Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.

  8. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  9. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  10. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  11. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  12. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  13. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  14. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  15. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  16. Influence of microscopic inhomogeneity on macroscopic transport current of Ag/Bi2223 tapes

    International Nuclear Information System (INIS)

    Ogawa, Kazuhiro; Osamura, Kozo

    2004-01-01

    In Ag/Bi2223 tapes, inhomogeneities such as spatially distributed weak links or non-superconducting oxides are inevitably introduced because of the complicated manufacturing process and thermodynamic instability. In order to clarify the effect of the difference in such microscopic inhomogeneites on the macroscopic current transport properties, we carried out a numerical analysis. By changing volume fraction (V f ) of the Bi2223 phase and the shape of local distribution of critical current at each weak link, it is revealed that I-V characteristics are largely affected by the breadth of local distributions with different dependence on V f of Bi2223 and calculated results can be analyzed by Weibull distribution function with some parameters including the information of two-dimensional distribution

  17. Langmuir wave-packet generation from an electron beam propagating in the inhomogeneous solar wind

    International Nuclear Information System (INIS)

    Zaslavsky, A.; Maksimovic, M.; Volokitin, A. S.; Krasnoselskikh, V. V.; Bale, S. D.

    2010-01-01

    Recent in-situ observations by the TDS instrument equipping the STEREO spacecraft revealed that large amplitude spatially localized Langmuir waves are frequent in the solar wind, and correlated with the presence of suprathermal electron beams during type III events or close to the electron foreshock. We briefly present the new theoretical model used to perform the study of these localized electrostatic waves, and show first results of simulations of the destabilization of Langmuir waves by a beam propagating in the inhomogeneous solar wind. The main results are that the destabilized waves are mainly focalized near the minima of the density profiles, and that the nonlinear interaction of the waves with the resonant particles enhances this focalization compared to a situation in which the only propagation effects are taken into account.

  18. The equilibrium theory of inhomogeneous polymers (international series of monographs on physics)

    CERN Document Server

    Fredrickson, Glenn

    2013-01-01

    The Equilibrium Theory of Inhomogeneous Polymers provides an introduction to the field-theoretic methods and computer simulation techniques that are used in the design of structured polymeric fluids. By such methods, the principles that dictate equilibrium self-assembly in systems ranging from block and graft copolymers, to polyelectrolytes, liquid crystalline polymers, and polymer nanocomposites can be established. Building on an introductory discussion of single-polymer statistical mechanics, the book provides a detailed treatment of analytical and numerical techniques for addressing the conformational properties of polymers subjected to spatially-varying potential fields. This problem is shown to be central to the field-theoretic description of interacting polymeric fluids, and models for a number of important polymer systems are elaborated. Chapter 5 serves to unify and expound the topic of self-consistent field theory, which is a collection of analytical and numerical techniques for obtaining solutions o...

  19. Parametrically induced low-frequency waves in weakly inhomogeneous magnetized plasmas

    International Nuclear Information System (INIS)

    Pesic, S.

    1981-01-01

    The linear dispersion relation governing the parametric interaction of a lower hybrid pump wave with a weakly-inhomogeneous current carrying hot plasma confined by a helical magnetic field is derived and solved numerically. The stability boundaries are delineated over a wide range in the k-space. The frequency and growth rate of decay instabilities are calculated for plasma parameters relevant to lower hybrid plasma heating experiments. The parametric excitation of drift waves and ion cyclotron current instabilities is discussed. In the low-density plasma region low minimum thresholds and high growth rates are obtained for the pump decay into ion cyclotron and nonresonant quasimodes. The spatial amplification of hot ion Bernstein waves and nonresonant quasimodes dominate in the plasma core (ω 0 /ωsub(LH) < 2). The presented theoretical results are in qualitative agreement with current LH plasma heating experiments. (author)

  20. Active Appearance Segmentation for Intensity Inhomogeneity in Light Sheet Fluorescence Microscopy

    DEFF Research Database (Denmark)

    Jensen, Casper Bo; Lyksborg, Mark; Hecksher-Sørensen, J.

    2016-01-01

    inhomogeneities which are often seen in Light Sheet Fluorescence Microscopy (LSFM) images. This robustness is achieved by modelling the appearance of an image as a regularized Normalized Gradient Field (rNGF). We perform two experiments to challenge the model. First it is tested using a repeated leave......Active Appearance Models (AAM) are used for annotating or segmenting shapes in biomedical images. Performance relies heavily on the image data used to train the AAM. In this paper we improve the generalization properties of the model by making it robust to slowly varying spatial intensity......-one-out approach on images with minimal imperfections where the left out images are corrupted by a simulated bias field and segmented using the AAM. Secondly we test the model on LSFM images with common acquisition problems. In both experiments the proposed approach outperforms the often used AAM implementation...