Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

Science.gov (United States)

Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

2018-06-01

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H + irradiation with fluences ranging from 1 × 10 11 to 5 × 10 13 p cm -2 . It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

Peptides for functionalization of InP semiconductors.

Science.gov (United States)

Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

2009-09-15

The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

Long-Term INP Measurements within the BACCHUS project

Science.gov (United States)

Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

2016-04-01

The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

Thermal diffusion in nanostructured porous InP

International Nuclear Information System (INIS)

Srinivasan, R.; Ramachandran, K.

2008-01-01

Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studies by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles. (author)

Workshop on Heteroepitaxial InP Solar Cells

Science.gov (United States)

Weinberg, I.; Walters, R. W.

1993-01-01

In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

High resistivity in InP by helium bombardment

International Nuclear Information System (INIS)

Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

1984-01-01

Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

Science.gov (United States)

Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

1994-01-01

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

The Horizontal Ice Nucleation Chamber (HINC): INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

Science.gov (United States)

Lacher, Larissa; Lohmann, Ulrike; Boose, Yvonne; Zipori, Assaf; Herrmann, Erik; Bukowiecki, Nicolas; Steinbacher, Martin; Kanji, Zamin A.

2017-12-01

In this work we describe the Horizontal Ice Nucleation Chamber (HINC) as a new instrument to measure ambient ice-nucleating particle (INP) concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T) and relative humidity (RH) in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw) of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi) of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l. ) to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %), relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 %) to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L-1; normalized to standard T of 273 K and pressure, p, of 1013 hPa) and 4.7 std L-1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC) of 2.2 std L-1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L-1 was measured during an event influenced by marine air, arriving at the JFJ from the North Sea and the Norwegian Sea. The contribution from anthropogenic or other

Recent results from advanced research on space solar cells at NASA

Science.gov (United States)

Flood, Dennis J.

1990-01-01

The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 pm) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

The Horizontal Ice Nucleation Chamber (HINC: INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

Directory of Open Access Journals (Sweden)

L. Lacher

2017-12-01

Full Text Available In this work we describe the Horizontal Ice Nucleation Chamber (HINC as a new instrument to measure ambient ice-nucleating particle (INP concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T and relative humidity (RH in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l.  to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %, relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 % to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L−1; normalized to standard T of 273 K and pressure, p, of 1013 hPa and 4.7 std L−1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC of 2.2 std L−1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L−1 was measured during an event influenced by marine air, arriving at the JFJ

Proton irradiation induced defects in Cd and Zn doped InP

International Nuclear Information System (INIS)

Rybicki, G.C.; Williams, W.S.

1993-01-01

Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

International Nuclear Information System (INIS)

Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

2015-01-01

In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO 2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP–Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO 2 mask which in turn would have been a consequence of the initial process treatments. The direct InP–Si heterointerface can find applications in high efficiency and cost-effective Si based III–V semiconductor multijunction solar cells and optoelectronics integration. (paper)

Indium phosphide (InP) for optical interconnects

NARCIS (Netherlands)

Lebby, M.; Ristic, S.; Calabretta, N.; Stabile, R.; Tekin, T.; Pitwon, R.; Håkansson, A.; Pleros, N.

2016-01-01

We present InP as the incumbent technology for data center transceiver and switching optics. We review the most popular InP monolithic integration approaches in light of photonic integration being recognized as an increasingly important technology for data center optics. We present Multi-Guide

The design and manufacture of a notch structure for a planar InP Gunn diode

International Nuclear Information System (INIS)

Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

2013-01-01

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm–20 μm) and diameter (40 μm–60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA–397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Thermal diffusion in nanostructured porous InP

Indian Academy of Sciences (India)

Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy ...

1990's annual report of INPE's Plasma Associated Laboratory

International Nuclear Information System (INIS)

1991-06-01

This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

InP tunnel junction for InGaAs/InP tandem solar cells

Science.gov (United States)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

InP nanopore arrays for photoelectrochemical hydrogen generation.

Science.gov (United States)

Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

2016-02-19

We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm(-2)). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

Experimental studies on the surface confined quiescent plasma at INPE

International Nuclear Information System (INIS)

Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

1988-01-01

The quiescent plasma machines used in several experiments at the Associated Plasma Laboratory in INPE are presented. The research activities comprise particle simulation studies on ion acoustic double layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

Experimental studies on the surface confined quiescent plasma at INPE

International Nuclear Information System (INIS)

Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

1988-06-01

Quiescent plasma machines are being used in several experiments at the Associated Plasma Laboratory in INPE. The research activities comprises particle simulation studies on ion acoustic double Layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

Transient behavior of interface state continuum at InP insulator-semiconductor interface

International Nuclear Information System (INIS)

Hasegawa, H.; Masuda, H.; He, L.; Luo, J.K.; Sawada, T.; Ohno, H.

1987-01-01

To clarify the drain current drift mechanism in InP MISFETs, an isothermal capacitance transient spectroscopy (ICTS) study of the interface state continuum is made on the anodic Al 2 O 3 /native oxide/ InP MIS system. Capture behavior is temperature-independent, non-exponential and extremely slow, whereas emission behavior is temperature- and bias- dependent, and is much faster. The observed behavior is explained quantitatively by the disorder induced gap state (DIGS) model, where states are distributed both in energy and in space. By comparing the transient behavior of interface states with the observed drift behavior of MISFETs, it is concluded that the electron capture by the DIGS continuum is responsible for the drain current drift of MISFETs. This led to a complete computer simulation of the observed current drift behavior

Effects of the electron beam on InP(100)

International Nuclear Information System (INIS)

Bouslama, M.; Jardin, C.; Ghamnia, M.

1996-01-01

Auger Electron Spectroscopy (AES) is performed to monitor the InP(100) surface evolution while it is irradiated by an electron beam of 5 KeV energy and 10 -3 A.cm -2 current density. A charge phenomenon appears during the irradiation of sputter-cleaned InP(100) by Ar + at low energy (500 eV). The deposition of phosphorus or antimony at room temperature on cleaned InP(100) is a good way of preventing this charging problem. This is also achieved by the growth of stoichiometric indium phosphide on InP(100) substrate, from an injection of phosphine and indium trimethyl whose ratio V/III is of 50, in a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. The electron beam even acts to stimulate oxidation of the stoichiometric InP(100) surface involving on the top layers, into a well defined oxide such as InPO 4 or a contamination layer composed of carbon and oxygen. The partial pressure in the spectrometer is about 10 -9 Torr. The incident electrons produce breaking of (In-P) chemical bonds so that the resulting indium takes part in the oxidation process. The phosphorus is thought to be desorbed from the surface. (author)

Growth of semi-insulating InP through nuclear doping

International Nuclear Information System (INIS)

Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

2012-01-01

Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

Interfacial reactions between thin films of zinc and (100) InP

International Nuclear Information System (INIS)

Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

1995-01-01

The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

International Nuclear Information System (INIS)

Lounis, Z; Bouslama, M; Hamaida, K; Abdellaoui, A; Ouerdane, A; Ghaffour, M; Berrouachedi, N; Jardin, C

2012-01-01

We give the great interest to characterise the InP and InPO 4 /InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO 4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In 2 O 3 . We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

Science.gov (United States)

Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

2017-06-14

The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

An ellipsometric measurement of optical properties for InP surfaces

International Nuclear Information System (INIS)

Liu, X.; Irene, E.A.; Hattangady, S.; Fountain, G.

1990-01-01

Several chemical cleaning procedures for InP surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involved the formation of surface films. In order to determine the complex index of refraction for InP, a novel method which employs ellipsometry measurements of a thin nonabsorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma enhanced chemical vapor deposition (PECVD) SiO 2 and Si 3 N 4 films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521 + i0.300 at the wavelength of 632.8 nm

P/N InP solar cells on Ge wafers

Science.gov (United States)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Three-Stage InP Submillimeter-Wave MMIC Amplifier

Science.gov (United States)

Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

2008-01-01

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

X-ray diffraction analysis of multilayer porous InP(001) structure

Czech Academy of Sciences Publication Activity Database

Lomov, A. A.; Punegov, V. I.; Vasil'ev, A. L.; Nohavica, Dušan; Gladkov, Petar; Kartsev, A. A.; Novikov, D. V.

2010-01-01

Roč. 55, č. 2 (2010), s. 182-190 ISSN 1063-7745 Institutional research plan: CEZ:AV0Z20670512 Keywords : silicon layers * INP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.644, year: 2010

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

International Nuclear Information System (INIS)

Kadys, A.; Sudzius, M.; Jarasiunas, K.; Mao Luhong; Sun Niefeng

2006-01-01

Photoelectric properties of semi-insulating, differently doped, and undoped indium phosphide wafers, grown by the liquid encapsulation Czochralski method, have been investigated by time-resolved picosecond four-wave mixing technique. Deep defect related carrier generation, recombination, and transport properties were investigated experimentally by measuring four-wave mixing kinetics and exposure characteristics. The presence of deep donor states in undoped InP was confirmed by a pronounced effect of a space charge electric field to carrier transport. On the other hand, the recharging dynamics of electrically active residual impurities was observed in undoped and Fe-doped InP through the process of efficient trapping of excess carriers. The bipolar diffusion coefficients and mobilities were determined for the all wafers

Effects of impurities on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.

1986-01-01

Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

Science.gov (United States)

Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

2015-06-01

The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research. © 2015 The Authors. Published under the terms of the CC BY 4.0 license.

Wurtzite InP nanowire arrays grown by selective area MOCVD

International Nuclear Information System (INIS)

Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

2010-01-01

InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

Science.gov (United States)

Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

2014-11-17

The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

Science.gov (United States)

Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

1994-01-01

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Epitaxial growth of InP on SI by MOCVD

International Nuclear Information System (INIS)

Konushi, F.; Seki, A.; Kudo, J.; Sato, H.; Kakimoto, S.; Fukushima, T.; Kubota, Y.; Koba, M.

1988-01-01

The authors have studied the heteroepitaxial growth of InP on large diameter Si substrates using MOCVD. A new MOCVD system with four inch wafer size capability was utilized in the growth. Single domain InP films have been successfully grown on four inch Si substrates by using a new heterostructure with a thin GaAs intermediate layer. In this paper, the authors describe the crystalline quality and residual stress of InP epilayers, estimated by etch pit density and x-ray diffraction, respectively. The authors also reports on the reduction of EPD by post-growth annealing

Susceptor and proximity rapid thermal annealing of InP

International Nuclear Information System (INIS)

Katz, A.; Pearton, S.J.; Geva, M.

1990-01-01

This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

A study of 1/f noise in InP grown by CBE

NARCIS (Netherlands)

Chen, X.Y.; Leijs, M.R.

1996-01-01

The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

Science.gov (United States)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Damage formation and annealing in InP due to swift heavy ions

International Nuclear Information System (INIS)

Kamarou, A.; Wesch, W.; Wendler, E.; Klaumuenzer, S.

2004-01-01

Virgin and pre-damaged InP samples were irradiated at room temperature (RT) and at liquid nitrogen temperature (LNT) with different fluences of 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. The pre-damaging was performed with 600 keV Ge ions at LNT to obtain different damage levels. The samples were analysed by means of Rutherford backscattering spectrometry (RBS) in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurs due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is much more efficient in comparison with that of 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe irradiation is hardly visible. At LNT InP appears to be much more radiation-resistant to swift heavy ion (SHI) irradiation than at RT. Our results show that during SHI irradiation of InP both damage formation and damage annealing occur simultaneously. Whether the first or the second one plays a more important role depends on the SHI mass and energy

Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

Science.gov (United States)

Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

2015-06-18

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

Surface photovoltage study of InP and Zn3P2

International Nuclear Information System (INIS)

Thurgate, S.M.; Lacuesta, T.D.; Huck, N.R.

1989-01-01

The surface photovoltage spectra of InP and Zn 3 P 2 were measured using a Kelvin probe to determine the contact potential difference between the sample and the probe as a function of the wavelength of illuminating light. The features in the resulting spectra were found to be sensitive to ion bombardment. The photovoltage spectra obtained from the InP differed from previously reported SPC spectra in that it showed clear evidence of surface states (or interfacial states) at 0.86 eV and 0.68 eV above VBM. It was found that the features in the spectrum of Zn 3 P 2 were reduced by ion bombardment, but not removed completely, whereas the features in the InP spectra were completely removed. Exposure of the ion bombarded urface to air restored the features of Zn 3 P 2 but only produced a small change in the spectrum of the InP. The loss of features in the InP spectra can be attributed to damage in the substrate caused by the ion bombardment even though the oxide layer was not removed before the damage occurred. Zn 3 P 2 was not as sensitive to ion damage as InP. (orig.)

Recent Activities on the Embrace Space Weather Regional Warning Center: the New Space Weather Data Center

Science.gov (United States)

Denardini, Clezio Marcos; Dal Lago, Alisson; Mendes, Odim; Batista, Inez S.; SantAnna, Nilson; Gatto, Rubens; Takahashi, Hisao; Costa, D. Joaquim; Banik Padua, Marcelo; Campos Velho, Haroldo

2016-07-01

On August 2007 the National Institute for Space Research started a task force to develop and operate a space weather program, which is known by the acronyms Embrace that stands for the Portuguese statement "Estudo e Monitoramento BRAasileiro de Clima Espacial" Program (Brazilian Space Weather Study and Monitoring program). The mission of the Embrace/INPE program is to monitor the Solar-Terrestrial environment, the magnetosphere, the upper atmosphere and the ground induced currents to prevent effects on technological and economic activities. The Embrace/INPE system monitors the physical parameters of the Sun-Earth environment, such as Active Regions (AR) in the Sun and solar radiation by using radio telescope, Coronal Mass Ejection (CME) information by satellite and ground-based cosmic ray monitoring, geomagnetic activity by the magnetometer network, and ionospheric disturbance by ionospheric sounders and using data collected by four GPS receiver network, geomagnetic activity by a magnetometer network, and provides a forecasting for Total Electronic Content (TEC) - 24 hours ahead - using a version of the SUPIM model which assimilates the two latter data using nudging approach. Most of these physical parameters are daily published on the Brazilian space weather program web portal, related to the entire network sensors available. Regarding outreach, it has being published a daily bulletin in Portuguese and English with the status of the space weather environment on the Sun, the Interplanetary Medium and close to the Earth. Since December 2011, all these activities are carried out at the Embrace Headquarter, a building located at the INPE's main campus. Recently, a comprehensive data bank and an interface layer are under commissioning to allow an easy and direct access to all the space weather data collected by Embrace through the Embrace web Portal. The information being released encompasses data from: (a) the Embrace Digisonde Network (Embrace DigiNet) that monitors

Spectroscopic determination of valence band parameters in InP

International Nuclear Information System (INIS)

Lewis, R.A.; Lough, B.C.C.

2003-01-01

Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

Science.gov (United States)

Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

2015-10-16

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

Science.gov (United States)

Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

2014-12-10

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

Ultrathin film, high specific power InP solar cells on flexible plastic substrates

International Nuclear Information System (INIS)

Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

2009-01-01

We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

Directory of Open Access Journals (Sweden)

Nikolett Sándor

2015-10-01

Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Science.gov (United States)

Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

2012-10-10

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Heterostructures (CaSrBa)F2 on InP for Optoelectronics

National Research Council Canada - National Science Library

Pyshkin, Sergei

1995-01-01

Temperature-reduced MBE growth of group II-a fluorides onto InP( 100) surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data...

All-optical signal processing using InP photonic-crystal nanocavity switches

DEFF Research Database (Denmark)

Yu, Yi; Vukovic, Dragana; Heuck, Mikkel

2014-01-01

In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across...... for the joint effects of fast carrier diffusion, slow surface and bulk recombination. Utilizin g the simple InP PhC nanocavity structure, we successfully dem onstrate 10-Gb/s RZ- OOK all-optical modulation with low energy consumption....

Fabrication and characterization of InP fresnel microlenses

International Nuclear Information System (INIS)

Diadiuk, V.; Walpole, J.N.; Liau, Z.L.

1987-01-01

Since diode lasers typically have a beam divergence of a few tens of degrees, collimating the laser outputs leads to greatly far-field patterns, which, in turn translates into more power in the main lobe of the combined output. Achieving this collimation in the case of a diode laser array, with its small device-to-device distance, requires an array of similarly spaced microlenses with very short focal length, small diameter and small F number. In this paper, the authors describe the fabrication and performance of a Fresnel microlens array etched directly in InP wafers; these microlenses have been used successfully to collimate the output of GainAsP/InP buried-heterostructure (BH) diode lasers

Radiation effects in heteroepitaxial InP solar cells

Science.gov (United States)

Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

1993-01-01

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

Science.gov (United States)

Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

2017-12-15

We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

Photoacoustic investigation of doped InP using open cell configuration

NARCIS (Netherlands)

George, S.D.; Vallabhan, C.P.G.; Heck, M.J.R.; Radhakrishnan, P.; Nampoori, V.P.N.

2002-01-01

An open cell photoacoustic (PA) configuration was employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data were evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a

Control of persistent photoconductivity in nanostructured InP through morphology design

International Nuclear Information System (INIS)

Monaico, Ed; Postolache, V; Borodin, E; Lupan, O; Tiginyanu, I M; Ursaki, V V; Adelung, R; Nielsch, K

2015-01-01

In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states. (paper)

Optical phonon modes of wurtzite InP

Science.gov (United States)

Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

2013-03-01

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

InP quantum dots embedded in GaP: Optical properties and carrier dynamics

International Nuclear Information System (INIS)

Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

2003-01-01

The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

International Nuclear Information System (INIS)

Warren, C.E.; Wagner, B.F.; Anderson, W.A.

1986-01-01

The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

[The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

Science.gov (United States)

Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

2016-02-01

Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

Science.gov (United States)

Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

2017-03-24

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Science.gov (United States)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Porous InP as piezoelectric matrix material in 1-3 magnetoelectric composite sensors

International Nuclear Information System (INIS)

Gerngross, M.-D.; Leisner, M.; Carstensen, J.; Foell, H.

2011-01-01

This work shows the results of the fabrication of semi-insulating piezoelectric porous InP structures by electrochemical etching and subsequent purely chemical post-etching in an isotropic HF, HNO 3 , EtOH and HAc containing electrolyte. The piezoelectric modulus d 14 of porous InP is measured to around |60| pm / V, which larger by a factor of 30 compared to bulk InP.

The temperature dependence of 1/f noise in InP

NARCIS (Netherlands)

Chen, X.Y.; Hooge, F.N.; Leijs, M.R.

1997-01-01

Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 104 kHz at temperatures from 77 to 500 K. The experimental results show that llfnoise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter CtL~,, in this temperature

Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors

International Nuclear Information System (INIS)

Sato, Taketomo; Mizohata, Akinori; Fujino, Toshiyuki; Hashizume, Tamotsu

2008-01-01

In this paper, we report the electrochemical formation of the InP porous nanostructures and their feasibility for the application to the amperometric chemical sensors. Our two step electrochemical process consists of the pore formation on a (001) n-type InP substrate and the subsequent etching of pore walls caused by changing the polarity of the InP electrode in a HCl-based electrolyte. By applying the anodic bias to the InP electrode, the high-density array of uniform nanopores was formed on the surface. Next, the cathodic bias was applied to the porous sample to reduce the wall thickness by cathodic decomposition of InP, where the thickness of InP nanowall decreased uniformly along the entire depth of the porous layer. From the amperometric measurements of the porous electrode, it was found that the electrocatalytic activity was much higher than that of the planar electrode. Furthermore, the current sensitivity for the H 2 O 2 detection was much enhanced after the cathodic decomposition process. The InP porous nanostructure formed by the present process is one of the promising structures for the application to the semiconductor-based bio/chemical sensors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

An improved large signal model of InP HEMTs

Science.gov (United States)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

International Nuclear Information System (INIS)

Sanatinia, Reza; Berrier, Audrey; Anand, Srinivasan; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri

2015-01-01

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, ‘black InP,’ a property useful for solar cells. The realization of a conformal p–n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved. (paper)

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

Science.gov (United States)

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Oxidation of InP nanowires: a first principles molecular dynamics study.

Science.gov (United States)

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

Science.gov (United States)

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

Directory of Open Access Journals (Sweden)

Jeyran eShahbazi

2013-05-01

Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

Amorphization and recrystallization in MeV ion implanted InP crystals

International Nuclear Information System (INIS)

Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

1988-01-01

A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

Systems and methods for advanced ultra-high-performance InP solar cells

Science.gov (United States)

Wanlass, Mark

2017-03-07

Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

Channeling study of laser-induced defect generation in InP and InAs

International Nuclear Information System (INIS)

Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

1992-01-01

Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

Science.gov (United States)

Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

2012-07-01

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Low temperature synthesis of InP nanocrystals

International Nuclear Information System (INIS)

Ung Thi Dieu Thuy; Tran Thi Thuong Huyen; Nguyen Quang Liem; Reiss, Peter

2008-01-01

We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl 3 .4H 2 O and yellow P as the In and P precursors, respectively, and NaBH 4 as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy

Efficiency enhancement of InP nanowire solar cells by surface cleaning

NARCIS (Netherlands)

Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

International Nuclear Information System (INIS)

Williams, R.S.

1982-01-01

Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

Science.gov (United States)

Gnaser, Hubert; Radny, Tobias

2015-12-01

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

Carrier concentration effects on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.; Uemura, C.

1984-01-01

Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

Comparative modeling of InP solar cell structures

Science.gov (United States)

Jain, R. K.; Weinberg, I.; Flood, D. J.

1991-01-01

The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Science.gov (United States)

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Tool for evaluating the evolution Space Weather Regional Warning Centers under the innovation point of view: the Case Study of the Embrace Space Weather Program Early Stages

Science.gov (United States)

Denardini, Clezio Marcos

2016-07-01

We have developed a tool for measuring the evolutional stage of the space weather regional warning centers using the approach of the innovative evolution starting from the perspective presented by Figueiredo (2009, Innovation Management: Concepts, metrics and experiences of companies in Brazil. Publisher LTC, Rio de Janeiro - RJ). It is based on measuring the stock of technological skills needed to perform a certain task that is (or should) be part of the scope of a space weather center. It also addresses the technological capacity for innovation considering the accumulation of technological and learning capabilities, instead of the usual international indices like number of registered patents. Based on this definition, we have developed a model for measuring the capabilities of the Brazilian Study and Monitoring Program Space Weather (Embrace), a program of the National Institute for Space Research (INPE), which has gone through three national stages of development and an international validation step. This program was created in 2007 encompassing competence from five divisions of INPE in order to carry out the data collection and maintenance of the observing system in space weather; to model processes of the Sun-Earth system; to provide real-time information and to forecast space weather; and provide diagnostic their effects on different technological systems. In the present work, we considered the issues related to the innovation of micro-processes inherent to the nature of the Embrace program, not the macro-economic processes, despite recognizing the importance of these. During the development phase, the model was submitted to five scientists/managers from five different countries member of the International Space Environment Service (ISES) who presented their evaluations, concerns and suggestions. It was applied to the Embrace program through an interview form developed to be answered by professional members of regional warning centers. Based on the returning

Low temperature synthesis of InP nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ung Thi Dieu Thuy [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Tran Thi Thuong Huyen [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); National University of Thai Nguyen, 2 Luong Ngoc Quyen, Thai Nguyen (Viet Nam); Nguyen Quang Liem [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam)], E-mail: liemnq@ims.vast.ac.vn; Reiss, Peter [DSM/INAC/SPrAM, UMR 5819 CEA-CNRS-Universite Joseph Fourier/LEMOH, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

2008-12-20

We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl{sub 3}.4H{sub 2}O and yellow P as the In and P precursors, respectively, and NaBH{sub 4} as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy.

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Science.gov (United States)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

Palladium nanoparticles on InP for hydrogen detection

Directory of Open Access Journals (Sweden)

Zdansky Karel

2011-01-01

Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

Radiation-hard, high efficiency InP solar cell and panel development

International Nuclear Information System (INIS)

Keavney, C.J.; Vernon, S.M.; Haven, V.E.; Nowlan, M.J.; Walters, R.J.; Slatter, R.L.; Summers, G.P.

1991-01-01

Indium phosphide solar cells with efficiencies over 19% (Air mass zero, 25 degrees C) and area of 4 cm 2 have been made and incorporated into prototype panels. The panels will be tested in space to confirm the high radiation resistance expected from InP solar cells, which makes the material attractive for space use, particularly in high-radiation orbits. Laboratory testing indicated an end-of-life efficiency of 15.5% after 10 15 1 MeV electrons, and 12% after 10 16 . These cells are made by metalorganic chemical vapor deposition, and have a shallow homojunction structure. The manufacturing process is amendable to scale-up to larger volumes; more than 200 cells were produced in the laboratory operation. Cell performance, radiation degradation, annealing behavior, and results of deep level transient spectroscopy studies are presented in this paper

Aqueous bromine etching of InP: a specific surface chemistry

Energy Technology Data Exchange (ETDEWEB)

Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

2012-06-15

The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Diameter Dependence of Planar Defects in InP Nanowires.

Science.gov (United States)

Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

2016-09-12

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

Application of MSM InP detectors to the measurement of pulsed X-ray radiation

Czech Academy of Sciences Publication Activity Database

Ryc, L.; Dobrzanski, L.; Dubecký, L.; Kaczmarczyk, J.; Pfeifer, Miroslav; Riesz, F.; Slysz, W.; Surma, B.

2008-01-01

Roč. 163, 4-6 (2008), 559-567 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : InP detector * X-ray detector * picosecond detector * laser plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

Silicon doped InP as an alternative plasmonic material for mid-infrared

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

2016-01-01

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

ESCA and electron diffraction studies of InP surface heated under As molecular beam exposure

International Nuclear Information System (INIS)

Sugiura, Hideo; Yamaguchi, Masafumi; Shibukawa, Atsushi

1983-01-01

Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590 0 C while the surface of InP heated above 400 0 C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness 0 C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500 0 C in As pressures of 10 -7 - 10 -5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process: 2InPO 4 + As 4 → 2InAs + P 2 O 5 + As 2 O 3 . (author)

Electrical properties of bulk InP synthesized by modified horizontal Bridgman method

International Nuclear Information System (INIS)

Pak, K.; Matsui, M.; Fukuhara, H.; Nishinaga, T.; Nakamura, T.; Yasuda, Y.

1986-01-01

High purity polycrystalline InP has been required for preparation of starting materials in LEC pulling. Usually, these materials are synthesized by the horizontal Bridgman (HB) or gradient freeze (GF) method. The major problem for InP synthesis has been attributed to silicon contamination during the growth, as shown by several workers. In a previous paper, the authors proposed a model in which the silicon contamination would occur due to the transport of SiO and In/sub 2/O gas species from the In-P melt to the phosphorus region by the reaction of the melt with the quartz boat in the HB growth system and suggested that the Si concentration in the In-P melt would have an intimate correlation with the temperature in the phosphorus region. However, the effect of the temperature in the phosphorus region on the electrical properties has not been studied in details as of yet. In this note, a modified horizontal Bridgman (MHB) method was developed to reduce the residual donor impurities, and the reduction mechanism is discussed

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

Directory of Open Access Journals (Sweden)

Ma Li

2011-01-01

Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

Science.gov (United States)

Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

2011-03-31

A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

Contribuição de diversos sistemas de observação na previsão de tempo no CPTEC/INPE Contribution of the several observation systems in the forecast skill at CPTEC/INPE

Directory of Open Access Journals (Sweden)

Rita V. Andreoli

2008-06-01

utilizada nos modelos de previsão numérica de tempo do CPTEC/INPE.A series of data withholding experiments was conducted at Center for Weather Forecasting and Climate Studies of the National Institute for Space Research (CPTEC/INPE, with the Global Physical-space Statistical Analysis System (GPSAS - a combination of the Spectral Atmospheric Global Circulation Model (CPTEC/COLA with the Physical-space Statistical Analysis System (PSAS. These experiments indicate how efficiently the observations are used in the particular assimilation system. The observation tested were from conventional data (SYNOP, BUOY, SHIP, radiosonde, aircraft, pilot balloons, and satellite data (ATOVS and AIRS/AMSU retrievals, QuikScat wind, Cloud Track Wind and Total Precipitation Water from SSM-I sensor. All observing systems tested have a notable positive impact on the forecast performance. The conventional data have a large impact on North Hemisphere region and it is associated the high density of these information in this region. On the other hand, the AIRS/AMSU retrievals had the largest impact in the Southern Hemisphere. Over the South America, AIRS/AMSU retrievals contribute with the same order of magnitude as conventional data and have a positive impact on all range forecast (1-5 day. Wind and TPW satellite-derived data had the largest impact in the tropical and South America regions at short (1-3 day range forecast. However, the use of the major observing system it is crucial to obtain operationally a good initial condition of the atmospheric state for initializing of the numerical weather models at CPTEC/INPE.

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

Science.gov (United States)

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Room-temperature annealing of Si implantation damage in InP

International Nuclear Information System (INIS)

Akano, U.G.; Mitchell, I.V.

1991-01-01

Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

Selective-area vapour-liquid-solid growth of InP nanowires

International Nuclear Information System (INIS)

Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J

2009-01-01

A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO 2 mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO 2 mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

Selective-area vapour-liquid-solid growth of InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J, E-mail: dan.dalacu@nrc-cnrc.gc.c [Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6 (Canada)

2009-09-30

A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO{sub 2} mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO{sub 2} mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

Science.gov (United States)

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

Science.gov (United States)

Deal, William R.; Chattopadhyay, Goutam

2012-01-01

The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

Electronic and magnetic properties of digitally Ti doped InP: A first principles study

International Nuclear Information System (INIS)

Rahman, Gul; Cho, Sunglae; Hong, Soon Cheol

2008-01-01

Using the full-potential linearized augmented plane wave method within the generalized gradient approximation, we study the electronic and the magnetic properties of digitally Ti doped InP. It is quite interesting that digitally Ti-doped InP system shows half metallic ferromagnetism even though both bulk zinc blende TiP and InP are paramagnetic. We also investigate the electronic and the magnetic properties as a function of spacer layer thickness. Their properties such as exchange coupling constant and atomic projected density of states are more or less independent of the InP thickness. Spin density contour maps indicate that the spin-polarization is confined within the TiP plane. The system may show a highly anisotropic property in spin-polarized transport. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Twin and grain boundary in InP: A synchrotron radiation study

International Nuclear Information System (INIS)

Han, Y.; Liu, X.; Jiao, J.; Lin, L.; Jiang, J.; Wang, Z.; Tian, Y.

1998-01-01

Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed

InP on SOI devices for optical communication and optical network on chip

Science.gov (United States)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

InAs quantum wires on InP substrate for VCSEL applications

OpenAIRE

Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

2008-01-01

International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

Magnetic circular dichroism study of electron-irradiation induced defects in InP

International Nuclear Information System (INIS)

Gislason, H.P.

1989-01-01

A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

Anodic oxidation of InP in pure water

International Nuclear Information System (INIS)

Robach, Y.; Joseph, J.; Bergignat, E.; Hollinger, G.

1989-01-01

It is shown that thin InP native oxide films can be grown by anodization of InP in pure water. An interfacial phosphorus-rich In(PO 3 ) 3 -like condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, they can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field

Vapor-phase etching of InP using anhydrous HCl and PH/sub 3/ gas

International Nuclear Information System (INIS)

Pak, K.; Koide, Y.; Imai, K.; Yoshida, A.; Nakamura, T.; Yasuda, Y.; Nishinaga, T.

1986-01-01

In situ etching of the substrate surface for vapor-phase epitaxy is a useful technique for obtaining a smooth and damage-free surface prior to the growth. Previous work showed that the incorporation of in situ etching of InP substrate with anhydrous HCl gas resulted in a significant improvement in the surface morphologies for MOVPE-grown InGaAs/InP and InP epitaxial layers. However, the experiment on the HCl etching of the InP substrate for a wide temperature range has not been performed as yet. In this note, the authors describe the effect of the substrate temperature on the etching morphology of InP substrate by using the anhydrous HCl and PH/sub 3/ gases. In the experiment, they used a standard MOVPE horizontal system. A quartz reactor tube in a 60 mm ID, 60 cm long, was employed

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

International Nuclear Information System (INIS)

Bierwagen, O.

2007-01-01

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

Energy Technology Data Exchange (ETDEWEB)

Bierwagen, O.

2007-12-20

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

High resolution resonant Raman scattering in InP and GaAs

International Nuclear Information System (INIS)

Kernohan, E.T.M.

1996-04-01

Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measuring the variations in scattering intensity under different excitation conditions. The shape of the Raman line also contains important information, but this has usually been lost because the low signal strengths mean that resolution has been sacrificed for sensitivity. It might therefore be expected that further insights into the processes involved in Raman scattering could be obtained by using high resolution methods. In this thesis I have measured single- and multiple- phonon scattering from bulk GaAs and InP with a spectral resolution better than the intrinsic widths of the Raman lines. For scattering in the region of one longitudinal optic (LO) phonon energy, it is found that in InP the scattering in the allowed and forbidden configurations occur at different Raman shifts, above and below the zone-centre phonon energy respectively. These shifts are used to determine the scattering processes involved, and how they differ between InP and GaAs. The lineshapes obtained in multiple-phonon scattering are found to depend strongly on the excitation energy used, providing evidence for the presence of intermediate resonances. The measured spectra are used to provide information about the phonon dispersion of InP, whose dispersion it is difficult to measure in any other way, and the first evidence is found for an upward dispersion of the LO mode. Raman lineshapes are measured for InP in a magnetic field. The field alters the electronic bandstructure, leading to a series of strong resonances in the Raman efficiency due to interband magneto-optical transitions between Landau levels. This allows multiphonon processes up to sixth-order to be investigated. (author)

Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

Energy Technology Data Exchange (ETDEWEB)

Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

1996-06-01

A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

Single-electron tunneling in InP nanowires

NARCIS (Netherlands)

Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

2003-01-01

A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

InP membrane on silicon integration technology

NARCIS (Netherlands)

Smit, M.K.

2013-01-01

Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

Science.gov (United States)

Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

2013-02-26

The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

High microwave performance ion-implanted GaAs MESFETs on InP substrates

International Nuclear Information System (INIS)

Wada, M.; Kato, K.

1990-01-01

Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

Electrical properties of InP irradiated by fast neutrons of a nuclear reactor

International Nuclear Information System (INIS)

Kolin, N.G.; Merkurisov, D.I.; Solov'ev, S.P.

2000-01-01

Electrophysical properties of InP single crystalline samples with different initial concentration of charge carriers have been studied in relation to irradiation conditions with fast neutrons of a nuclear reactor and subsequent heat treatments within the temperature range of 20-900 deg C. It has been shown that changes of the properties depend on the initial doping level. The annealing in the temperature range mentioned above results in the elimination of radiation defects. This makes possible to use the nuclear doping method for InP samples. In this respect the contribution of intermediate neutron reactions to the whole effect of the InP nuclear doping is estimated to be ∼ 10% [ru

Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses.

Science.gov (United States)

Laufersky, Geoffry; Bradley, Siobhan; Frécaut, Elian; Lein, Matthias; Nann, Thomas

2018-05-10

The synthesis of colloidal indium phosphide quantum dots (InP QDs) has always been plagued by difficulties arising from limited P3- sources. Being effectively restricted to the highly pyrophoric tris(trimethylsilyl) phosphine (TMS3P) creates complications for the average chemist and presents a significant risk for industrially scaled reactions. The adaptation of tris(dialkylamino) phosphines for these syntheses has garnered attention, as these new phosphines are much safer and can generate nanoparticles with competitive photoluminescence properties to those from (TMS)3P routes. Until now, the reaction mechanics of this precursor were elusive due to many experimental optimizations, such as the inclusion of a high concentration of zinc salts, being atypical of previous InP syntheses. Herein, we utilize density functional theory calculations to outline a logical reaction mechanism. The aminophosphine precursor is found to require activation by a zinc halide before undergoing a disproportionation reaction to self-reduce this P(iii) material to a P(-iii) source. We use this understanding to adapt this precursor for a two-pot nanoparticle synthesis in a noncoordinating solvent outside of glovebox conditions. This allowed us to generate spherical InP/ZnS nanoparticles possessing fluorescence quantum yields >55% and lifetimes as fast as 48 ns, with tunable emission according to varying zinc halide acidity. The development of high quality and efficient InP QDs with this safer aminophosphine in simple Schlenk environments will enable a broader range of researchers to synthesize these nontoxic materials for a variety of high-value applications.

Surface protection during plasma hydrogenation for acceptor passivation in InP

International Nuclear Information System (INIS)

Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

1990-01-01

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

International Nuclear Information System (INIS)

Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

1999-01-01

It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

Science.gov (United States)

Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

Composition and structure of ion-bombardment-induced growth cones on InP

International Nuclear Information System (INIS)

Malherbe, J.B.; Lakner, H.; Gries, W.H.

1991-01-01

The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

Energy Technology Data Exchange (ETDEWEB)

Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

1997-03-01

We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

Saturation broadening effect in an InP photonic-crystal nanocavity switch

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2014-01-01

Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

Metastability of the phosphorus antisite defect in low-temperature InP

International Nuclear Information System (INIS)

Mikucki, J.; Baj, M.; Wasik, D.; Walukiewicz, W.; Bi, W. G.; Tu, C. W.

2000-01-01

We report on the transport properties of low-temperature (LT) InP/In x Ga 1-x As/InP heterostructures and LT InP thin films. Hall effect measurements performed at hydrostatic pressure up to 1.5 GPa and temperatures ranging from 4.2 K to 250 K on both types of samples as well as Shubnikov-de Haas experiments made on heterostructures clearly reveal the metastable character of phosphorus antisite defects present in LT InP layers. (c) 2000 The American Physical Society

Budker INP in the LHC Machine (2)

CERN Multimedia

2001-01-01

The main BINP contributions to the LHC machine are magnets for transfer lines (26 MCHF) and bus- bar sets (23 MCHF). Budker INP is also responsible for construction of some other LHC magnets and vacuum parts. In total, the contribution to the LHC machine will reach about 90 MCHF.

Surface Plasmons on Highly Doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

2016-01-01

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

New applications of elemental analysis methods using X-rays at the INPE Cyclotron

International Nuclear Information System (INIS)

Constantinescu, B.; Constantin, F.; Dima, S.; Plostinaru, D.; Popa-Simil, L.

1990-01-01

Some results in various samples elemental analysis using PIXE(Particle Induced X-ray Emission) method at INPE U-120 Cyclotron are presented. The main purpose of the research was the determination of metal concentration (Ca,Cr,Mn,Fe,Ni,Cu,Zn) in drug industry materials and products, some tree seeds as environmental pollution indicator, mineral oil and gasoline used in mechanical engineering, cooling water for oil industry equipment. (Author)

Influence of the cone angle and crystal shape on the formation of twins in InP crystals

International Nuclear Information System (INIS)

Li, Xiaolan; Yang, Ruixia; Yang, Fan; Sun, Tongnian; Sun, Niefeng

2012-01-01

We present the investigation of twinning phenomena of LEC InP crystal growth which has been carried out in our laboratory in recent years. It is observed that the yield of twin-free single crystal InP can be grown by control the cone angle and crystal shape of a gradually increased diameter. Twin formation has been correlated to many growth factors. The influence of ingot shape on the formation of twins can be looked as the conical angle dependent twin probability of InP crystals. Twin-free InP crystals can be grown by large cone angle over 75 to 90 . (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires.

Science.gov (United States)

Zilli, Attilio; De Luca, Marta; Tedeschi, Davide; Fonseka, H Aruni; Miriametro, Antonio; Tan, Hark Hoe; Jagadish, Chennupati; Capizzi, Mario; Polimeni, Antonio

2015-04-28

Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Science.gov (United States)

Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Science.gov (United States)

Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

1996-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Ultrafast recombination in H+ bombarded InP and GaAs: Consequences for the carrier distribution functions

International Nuclear Information System (INIS)

Lamprecht, K.F.; Juen, S.; Hoepfel, R.A.; Palmetshofer, L.

1992-01-01

The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H + bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime they observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

Science.gov (United States)

Dionízio Moreira, M; Venezuela, P; Miwa, R H

2010-07-16

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

International Nuclear Information System (INIS)

Dionizio Moreira, M; Venezuela, P; Miwa, R H

2010-01-01

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

Optical properties of Sulfur doped InP single crystals

Science.gov (United States)

El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

2014-05-01

Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

Effects of mask imperfections on InP etching profiles

International Nuclear Information System (INIS)

Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

1990-01-01

The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

Ultrafast carrier dynamics in Br.sup.+./sup.-bombarded InP studied by time-resolved terahertz spectroscopy

Czech Academy of Sciences Publication Activity Database

Němec, Hynek; Fekete, Ladislav; Kadlec, Filip; Kužel, Petr

2008-01-01

Roč. 78, č. 23 (2008), 235206/1-235206/7 ISSN 1098-0121 R&D Projects: GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : InP * carrier lifetime * carrier mobility * ultrafast * ion-bombardment * terahertz Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

Science.gov (United States)

Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

2016-04-01

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

Science.gov (United States)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

Science.gov (United States)

Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

2017-08-04

We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

Molecular beam epitaxy of InxGa1-xAs on InP (100) substrates

International Nuclear Information System (INIS)

Dvoryankina, G.G.; Dvoryankin, V.F.; Petrov, A.G.; Kudryashov, A.A.; Khusid, L.B.

1991-01-01

Heteroepitaxy layers of In x Ga 1-x As in the wide field of compositions (x=0.2-0.8) of 0.2-2.0 μm thick on (100) InP substrates were grown using the methods of epitaxy from molecular beams. Structure, surface morphology and electric properties of layers in relation to their thick and composition were investigated. It was shown that the quality of In x Ga 1-x As layers on (100) InP was more sensitive to tensile strain than compressive strain. Different mechanisms of scattering of free electrons in layers of In x Ga 1-x As(x∼=0.53) on (101) InP were considered

Carrier removal and defect behavior in p-type InP

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

Science.gov (United States)

Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

2016-09-06

This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

[Managment system in safety and health at work organization. An Italian example in public sector: Inps].

Science.gov (United States)

Di Loreto, G; Felicioli, G

2010-01-01

The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP

International Nuclear Information System (INIS)

Ferrari, C.; Bocchi, C.; Fornari, R.; Moze, O.; Wilson, C.C.

1992-01-01

A structural investigation of the Zn blende structure semiconductor InP has been carried out using the single crystal diffractometer SXD at the pulsed neutron facility ISIS. The ability to measure structure factors accurately at large Q values even with highly absorbing materials such as InP is demonstrated. Measurements were performed on a single crystal of InP at 293, 100 and 50 K with the crystallographic axis mounted perpendicular to the scattering plane. This enabled collection of (hhl) reflections up to a maximum with Miller indices (10, 10, 8). (orig.)

AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

International Nuclear Information System (INIS)

Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y.

2003-01-01

ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

Bandgap Engineering of InP QDs Through Shell Thickness and Composition

Energy Technology Data Exchange (ETDEWEB)

Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

2012-06-21

Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

Recent results of plasma research activities at the Instituto de Pesquisas Espaciais

International Nuclear Information System (INIS)

Barroso, J.J.; Bittencourt, J.A.; Dallaqua, R.S.; Del Bosco, E.; Ferreira, A.; Ferreira, J.L.; Galvao, G.P.; Galvao, R.M.O.; Ludwig, G.O.; Montes, A.

1987-09-01

Recent results obtained in different experiments at the Institute for Space Research (INPE) are reported. An enrichment of 390% of carbon isotopes has been achieved in the plasma centrifege. The role of ion-acoustic turbulence in the formation of double layers has been experimentaly investigated. The turbulent spectrum has been measured and agrees quite well with the prediction of the modified Kadomtsev's renormalized theory. The characteristics of the gyrotron that is presently being built at INPE and new techniques for gyrotron design are discussed. Thecretical results on the generalized Spitzer-Harm problem, current drive in the start-up phase of Tokamaks, and quasilinear theory of beat-wave current drive are also presented. (author) [pt

High detection performance of particle detectors based on SI InP doped with Ti and Zn

Czech Academy of Sciences Publication Activity Database

Gorodynskyy, Vladyslav; Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

2008-01-01

Roč. 55, č. 5 (2008), s. 2785-2788 ISSN 0018-9499 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512 Keywords : radiation detection * InP * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.518, year: 2008

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

Science.gov (United States)

Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

2017-12-01

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

Switching dynamics in InP photonic-crystal nanocavity

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2016-01-01

In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics of...

InP solar cell with window layer

Science.gov (United States)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Lattice location of diffused Zn atoms in GaAs and InP single crystals

International Nuclear Information System (INIS)

Chan, L.Y.; Yu, K.M.; Ben-Tzur, M.; Haller, E.E.; Jaklevic, J.M.; Walukiewicz, W.; Hanson, C.M.

1991-01-01

We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 10 20 cm -3 for GaAs, but the maximum concentration for InP appears at mid 10 18 cm -3 . The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn 3 P 2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

Science.gov (United States)

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Radiation defects in electron-irradiated InP crystals

International Nuclear Information System (INIS)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

1982-01-01

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

Radiation defects in electron-irradiated InP crystals

Energy Technology Data Exchange (ETDEWEB)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

1982-06-16

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

Triple-axis X-ray reciprocal space mapping of In{sub y}Ga{sub 1-y}As thermophotovoltaic diodes grown on (1 0 0) InP substrates

Energy Technology Data Exchange (ETDEWEB)

Dashiell, M.W.; Ehsani, H.; Sander, P.C. [Lockheed Martin Corporation, Schenectady, NY 12301-1072 (United States); Newman, F.D. [Emcore Corporation, Albuquerque, NM 87123 (United States); Wang, C.A. [MIT Lincoln Laboratory, Lexington, MA 02420 (United States); Shellenbarger, Z.A. [Sarnoff Corporation, Princeton NJ, 08543-5300 (United States); Donetski, D.; Gu, N.; Anikeev, S. [Department of Electrical Engineering, State University of New York, Stony Brook, NY 11794-2350 (United States)

2008-09-15

Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of In{sub y}Ga{sub 1-y}As/InP{sub 1-x}As{sub x} thermophotovoltaic (TPV) diodes grown by metal-organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis X-ray reciprocal space mapping techniques. In{sub 0.53}Ga{sub 0.47}As (E{sub gap}=0.74 eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice-mismatched (LMM) In{sub 0.67}Ga{sub 0.33}As (E{sub gap}=0.6 eV) TPV diodes are grown on three-step InP{sub 1-x}As{sub x} (0InP substrates. X-ray reciprocal space maps about the symmetric (4 0 0) and asymmetric (5 3 3) reciprocal lattice points (RELPs) determine the in-plane and out-of-plane lattice parameters and strain of the In{sub y}Ga{sub 1-y}As TPV active layer and underlying InP{sub 1-x}As{sub x} buffers. Triple-axis X-ray rocking curves about the LMM In{sub 0.67}Ga{sub 0.33}As RELP show an order of magnitude increase of its full-width at half-maximum (FWHM) compared to that from the LM In{sub 0.53}Ga{sub 0.47}As (250 vs. 30 arcsec). Despite the significant RELP broadening, the photovoltaic figure of merits show that the electronic quality of the LMM In{sub 0.67}Ga{sub 0.33}As approaches that of the LM diode material. This indicates that misfit-related crystalline imperfections are not dominating the photovoltaic response of the optimized LMM In{sub 0.67}Ga{sub 0.33}As material compared with the intrinsic recombination processes and/or recombination through native point defects, which would be present in both LMM and LM diode material. However, additional RELP broadening in non-optimized LMM In{sub 0.67}Ga{sub 0.33}As n/p junction diodes does correspond to significant degradation of TPV diode open-circuit voltage and minority carrier lifetime demonstrating that there is correlation between X-ray FWHM and the electronic performance of the LMM TPV diodes. (author)

Space Station Habitability Research

Science.gov (United States)

Clearwater, Yvonne A.

1988-01-01

The purpose and scope of the Habitability Research Group within the Space Human Factors Office at the NASA/Ames Research Center is described. Both near-term and long-term research objectives in the space human factors program pertaining to the U.S. manned Space Station are introduced. The concept of habitability and its relevancy to the U.S. space program is defined within a historical context. The relationship of habitability research to the optimization of environmental and operational determinants of productivity is discussed. Ongoing habitability research efforts pertaining to living and working on the Space Station are described.

Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom K.

2012-01-01

In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

Science.gov (United States)

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

Science.gov (United States)

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

International Nuclear Information System (INIS)

Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

2014-01-01

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

Segregation of antimony in InP in MOVPE

Energy Technology Data Exchange (ETDEWEB)

Weeke, Stefan

2008-07-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Segregation of antimony in InP in MOVPE

International Nuclear Information System (INIS)

Weeke, Stefan

2008-01-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Amorphization of Ge and InP studied using nuclear hyperfine methods

International Nuclear Information System (INIS)

Byrne, A.P.; Bezakova, E.; Glover, C.J.; Ridgway, M.C.

1999-01-01

The ion beam amorphization of InP and Ge has been studied using the Perturbed Angular Correlation (PAC) technique. Semiconductor samples were preimplanted with the radioisotope 111 In using a direct production-recoil implantation method and beams from the ANU Heavy-ion Facility. Following annealing samples were amorphized using Ge beams with doses between 2 x 10 12 ion/cm 2 and 5000 x 10 12 ion/cm 2 . For InP the PAC spectra identified three distinct regimes, crystalline, disordered and amorphous environments, with a smooth transition observed as a function of dose. The dose dependence of the relative fractions of the individual probe environments has been determined. A direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. The PAC method compares favorably with other methods used in its ability to differentiate changes at high dose. The results for InP will be compared with those in Ge. The implantation method will be discussed, as will developments in the establishment of a dedicated facility for the implantation of radioisotopes

Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2013-01-01

Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

The lower yield point of InP and GaAs

International Nuclear Information System (INIS)

Siethoff, H.

1987-01-01

A study of the strain-rate and temperature dependence of the lower yield stress (τ ly ) in undoped InP and of the strain-rate dependence of τ ly in undoped and Zn-doped GaAs is reported. The deformation along (123) orientation was carried out in compression at constant strain rates ranging from 10 -5 to 10 -2 s -1 . The temperature range extended from 540 to 780 0 C. The activation energy and stress exponent of the dislocation velocity were calculated. Experiments have shown that τ ly of InP depends on temperature and strain rate in a manner similar to other semiconductors like Si and InSb, whereas τ ly of GaAs shows an unusual strain-rate dependence

Influence of Yb AND Yb2O3 addition on the properties of InP layers

Czech Academy of Sciences Publication Activity Database

Procházková, Olga; Grym, Jan; Zavadil, Jiří; Žďánský, Karel; Lorinčík, Jan

2008-01-01

Roč. 10, č. 12 (2008), s. 3261-3264 ISSN 1454-4164 R&D Projects: GA ČR GA102/06/0153; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor technology * rare earth elements * InP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.577, year: 2008

Integrated cloud infrastructure of the LIT JINR, PE "NULITS" and INP's Astana branch

Science.gov (United States)

Mazhitova, Yelena; Balashov, Nikita; Baranov, Aleksandr; Kutovskiy, Nikolay; Semenov, Roman

2018-04-01

The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR) and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity "Nazarbayev University Library and IT services" (PE "NULITS") Autonomous Education Organization "Nazarbayev University" (AO NU) and The Institute of Nuclear Physics' (INP's) Astana branch.

Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

Science.gov (United States)

Chauvin, Nicolas; Mavel, Amaury; Jaffal, Ali; Patriarche, Gilles; Gendry, Michel

2018-02-01

Excitation photoluminescence spectroscopy is usually used to extract the crystal field splitting (ΔCR) and spin orbit coupling (ΔSO) parameters of wurtzite (Wz) InP nanowires (NWs). However, the equations expressing the valence band splitting are symmetric with respect to these two parameters, and a choice ΔCR > ΔSO or ΔCR InP NWs grown on silicon. The experimental results combined with a theoretical model and finite difference time domain calculations allow us to conclude that ΔCR > ΔSO in Wz InP.

Space biology research development

Science.gov (United States)

Bonting, Sjoerd L.

1993-01-01

The purpose of the Search for Extraterrestrial Intelligence (SETI) Institute is to conduct and promote research related activities regarding the search for extraterrestrial life, particularly intelligent life. Such research encompasses the broad discipline of 'Life in the Universe', including all scientific and technological aspects of astronomy and the planetary sciences, chemical evolution, the origin of life, biological evolution, and cultural evolution. The primary purpose was to provide funding for the Principal Investigator to collaborate with the personnel of the SETI Institute and the NASA-Ames Research center in order to plan and develop space biology research on and in connection with Space Station Freedom; to promote cooperation with the international partners in the space station; to conduct a study on the use of biosensors in space biology research and life support system operation; and to promote space biology research through the initiation of an annual publication 'Advances in Space Biology and Medicine'.

Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition.

Science.gov (United States)

Radny, Tobias; Gnaser, Hubert

2014-01-01

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence Φ the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18) cm(-2), and ion fluxes f of (0.4 - 2) × 10(14) cm(-2) s(-1) were used. The surface morphology resulting from these ion irradiations was examined by atomic force microscopy (AFM). Generally, nanodot structures are formed on the surface; their dimensions (diameter, height and separation), however, were found to depend critically on the specific bombardment conditions. As a function of ion fluence, the mean radius r, height h, and spacing l of the dots can be fitted by power-law dependences: r ∝ Φ(0.40), h ∝ Φ(0.48), and l ∝ Φ(0.19). In terms of ion flux, there appears to exist a distinct threshold: below f ~ (1.3 ± 0.2) × 10(14) cm(-2) s(-1), no ordering of the dots exists and their size is comparatively small; above that value of f, the height and radius of the dots becomes substantially larger (h ~ 40 nm and r ~ 50 nm). This finding possibly indicates that surface diffusion processes could be important. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that APT can provide analytical information on the composition of individual InP nanodots. By means of 3D APT data, the surface region of such nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of approximately 1 nm and amount to 1.3 to 1.7.

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

2009-01-01

Roč. 598, č. 3 (2009), s. 759-763 ISSN 0168-9002 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512 Keywords : radiation detector * InP * crystal growth Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.317, year: 2009

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

Science.gov (United States)

Chauvin, Nicolas; Mavel, Amaury; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel; Machon, Denis

2016-05-11

The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Science.gov (United States)

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

International Nuclear Information System (INIS)

Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

1988-09-01

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

Impacto da utilização de previsões "defasadas" no sistema de previsão de tempo por conjunto do CPTEC/INPE The impact of using lagged forecasts on the CPTEC/INPE ensemble prediction system

Directory of Open Access Journals (Sweden)

Lúcia Helena Ribas Machado

2010-03-01

Full Text Available Neste trabalho é descrita a aplicação da técnica de previsões defasadas no sistema de previsão de tempo por conjuntos do Centro de Previsão de Tempo e Estudos Climáticos (EPS-CPTEC/INPE. Os dados do CPTEC/INPE consistem em uma amostra de dois meses com previsões de 15 dias para as variáveis: altura geopotencial em 500 hPa, temperatura do ar no nível de 850 hPa, e pressão atmosférica ao nível médio do mar. O estudo consiste em investigar: 1 o desempenho do EPS-CPTEC/INPE utilizando a técnica de previsões defasadas comparado àquele do conjunto operacional; 2 a relação entre o espalhamento e o desempenho da previsão, a fim de avaliar o uso da dispersão como preditor do desempenho. Os resultados indicam que a utilização de previsões defasadas em 12h, melhora o desempenho do conjunto operacional, contribuindo para aumentar o espalhamento do conjunto e, conseqüentemente, reduzir a sub-dispersão do sistema. Também foi observado que o conjunto defasado tem desempenho comparável àquele do conjunto operacional e que há uma tendência de desempenho alto quando o espalhamento é baixo, para os prazos de 5 e 7 dias de previsão. Estes resultados servem como base para a implementação operacional desta técnica, que apresenta baixo custo computacional, e contribui para a utilização mais eficiente das previsões por conjunto do CPTEC/INPE.In this work we report the application of the lagged average forecasting technique to CPTEC/INPE ensemble forecast. The CPTEC/INPE data consist of two months samples of 15 days forecast for the variables: geopotential height at 500 hPa, air temperature at 850 hPa and mean sea level atmospheric pressure. We focus on the following: 1 Does the lagged averaged ensemble forecast improve forecast skill compared to the CPTEC/INPE operational ensemble? 2 Is the dispersion of the ensemble useful in predicting forecast skill? The results indicate that the utilization of 12h-lagged average forecasts

Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

International Nuclear Information System (INIS)

Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

2014-01-01

The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behaviour

NARCIS (Netherlands)

Notten, P.H.L.; Damen, A.A.J.M.

1987-01-01

Etch rate-potential curves of p-InP in HBr and Br2/HBr solutions in the dark and under illumination were correlated with current-potential curves. It was found that InP is etched via a "chemical" mechanism both by HBr and Br2. In aqueous HBr solutions InP is only etched at a significant rate at

Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

Directory of Open Access Journals (Sweden)

Ashish Kumar

2012-03-01

Full Text Available We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP relaxation and Elliott-Yafet (EY relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction and structural inversion asymmetry (Rashba spin-orbit interaction. The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

Particle detectors based on InP Schottky diodes

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan

2012-01-01

Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

Design of mm-wave InP DHBT power amplifiers

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Yan, Lei

2011-01-01

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

Phosphorus-hydrogen complexes in LEC-grown InP

International Nuclear Information System (INIS)

Ulrici, W.; Kwasniewski, A.; Czupalla, M.; Neubert, M.

2005-01-01

In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm -1 . All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm -1 is due to a single hydrogen atom bonded to P in an indium vacancy (V In ) and that the line at 2315.6 cm -1 is due to the complex of four P-H bonds in an V In . In InP:H:D, this V In H 4 complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V In H n D m complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Krozer, Viktor; Konczykowska, Agnieszka

2006-01-01

In this paper an approach for high-speed InP DHBT modeling valid to 110 GHz is reported. Electromagnetic (EM) simulation is applied to predict the embedded network model caused by pad parasitics. The form of the parasitic network calls for a 4-step de-embedding approach. Applying direct parameter...... extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. An parameter extraction approach is described for the Agilent HBT model, which assures consistency between large-signal and bias-dependent smallsignal modeling....

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

2017-03-15

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

International Nuclear Information System (INIS)

Steele, J A; Lewis, R A; Sirbu, L; Enachi, M; Tiginyanu, I M; Skuratov, V A

2015-01-01

High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index n eff and compared to effective media approximations. (invited article)

InP DHBT MMICs for millimeter-wave front-ends

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

2009-01-01

In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

X-ray photoelectron spectroscopy/Ar+ ion profile study of thin oxide layers on InP

International Nuclear Information System (INIS)

Thurgate, S.M.; Erickson, N.E.

1990-01-01

The effect of incremental ion bombardment on the surface layers of an aqua regia etched InP sample was studied by monitoring the components of the In 3d 5/2 and O 1s x-ray photoelectron spectroscopy (XPS) lines as the sample was bombarded with low energy (1 keV) Ar + ions. The changes in the stoichiometry of the surface produced large shifts in the position of the In 3d and O 1s lines that were not paralleled by shifts in the P 2p line. Analysis of these shifts indicated that the surface was covered with a mixture of indium hydroxide and indium phosphate, with the phosphate closer to the InP substrate. It is proposed that this layer structure is due to differences in the dissolution rates of the oxidation products in the acid etch and the effect of the distilled water rinse. It may be possible to alter the composition of such oxides by carefully tailoring the etch conditions to optimize the kinetics for the particular oxide phase required. The analysis of the XPS lines also showed that the InP substrate was damaged at very low ion doses, and finally decomposed by the ion beam. When the ion ''cleaned'' sample was exposed to oxygen, a different oxide system was produced which consisted largely of In 2 O 3 and InPO 4 [or In(PO 3 ) x ]. This model of the oxidized surface of InP is consistent with other measurements and we conclude that ion milling together with XPS and careful curve fitting can be used to find the nature of the thin oxides on InP

Photoreflection investigations of the dopant activation in InP doped with beryllium ions

International Nuclear Information System (INIS)

Avakyants, L.P.; Bokov, P.Yu.; Chervyakov, A.V.

2005-01-01

The processes of the dopant activation in the InP crystals implanted with Be + ions (energy 100 keV, dose 10 13 cm -2 and subsequent thermal annealing during 10 s) have been studied by means of photoreflection spectroscopy. Spectral lines of the crystal InP were absent in the photoreflection spectra of the samples annealed at temperatures less then 400 Deg C. This fact is connected with the disordering of the crystal structure due to the ion implantation. In the temperature range 400-700 Deg C the lines from InP band gap (1.34 eV) and conductance band-spin-orbit splitting valence subband (1.44 eV) have been observed due to the recovery of the crystal structure. In the photoreflectance spectra of a 800 Deg C annealed sample the Franz-Keldysh oscillations have been observed, which can be an evidence in favour of the dopant activation. Carrier concentration calculated from the period of Franz-Keldysh oscillations was equal to 2.2 x 10 16 cm -3 [ru

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

International Nuclear Information System (INIS)

Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

2012-01-01

Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

Effects of Be doping on InP nanowire growth mechanisms

Energy Technology Data Exchange (ETDEWEB)

Yee, R. J.; Gibson, S. J.; LaPierre, R. R. [Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Dubrovskii, V. G. [St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)

2012-12-24

Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below {approx}10{sup 18} cm{sup -3}, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

Science.gov (United States)

2012-01-01

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

Use of halide transport in epitaxial growth of InP and related compounds

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

1996-12-31

In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

Chemical etching and polishing of InP

International Nuclear Information System (INIS)

Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

1988-01-01

This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

InP nanowire array solar cell with cleaned sidewalls

NARCIS (Netherlands)

Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

Lattice defects in LPE InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates

International Nuclear Information System (INIS)

Ishida, K.; Matsumoto, Y.; Taguchi, K.

1982-01-01

Lattice defects generated during LPE growth of InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates are studied. Two different kinds of dislocations are observed at the two interfaces of the epitaxial layers; at the InP-InGaAsP interface, misfit dislocations are generated in the InP layer by carry over of InGaAsP melt into the InP one and at the InGaAs-InP interface, V-shaped dislocations are generated in the InGaAs layer. It is shown that the critical amount of lattice mismatch to suppress generation of misfit dislocations in InP is about two times smaller than that of other III-V compound semiconductors. Conditions to suppress the generation of these dislocations are clarified. (author)

Post deposition annealing effect on the properties of Al2O3/InP interface

Science.gov (United States)

Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

2018-02-01

Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

Model of deep centers formation and reactions in electron irradiated InP

International Nuclear Information System (INIS)

Sibille, A.; Suski, J.; Gilleron, M.

1986-01-01

We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p + n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples

Thermal crosstalk investigation in an integrated InP multiwavelength laser

NARCIS (Netherlands)

Gilardi, G.; Wale, M.J.; Smit, M.K.

2012-01-01

We numerically investigate the thermal crosstalk effects in an integrated InP multiwavelength laser. The multiwavelength laser under investigation consists of a number of Distributed Bragg Reflector lasers and an Arrayed Waveguide Grating. Each laser generates a fixed wavelength and the Arrayed

Low-frequency photocurrent oscillations in InP in magnetic field

International Nuclear Information System (INIS)

Slobodchikov, S.V.; Salikhov, Kh.M.; Kovalevskaya, G.G.

1994-01-01

Results of investigations of magnetic field effect on the oscillating photocurrent in InP crytals are presented. It is shown that the magnetic field plays the part of an additional source of photocarrier injection in the sample bulk. 3 refs., 2 figs

The analytical center of INP - experience of becoming prospect of development

International Nuclear Information System (INIS)

Kadyrzhanov, K.K.; Kozhakhmetov, S.K.

2004-01-01

Full text: In 2001 in INP NNC RK the Analytical center has been organized as separate structural division. The primary goal of the Analytical center is all-round use of the scientific and technical potential, which has been saved up in INP NNC RK for the organization and carrying out of researches, actual for, first of all for the domestic companies, scientific institutes and the foreign companies working in Kazakhstan. In the report data on the equipment with which the Analytical center for performance of works is equipped are resulted. For these purposes the grants of the international organizations and funds are involved. For example, about two years it is maintained universal X-ray diffractometer Brucker D8 Advance got with support of U.S. CRDF (the project *KR2-993). Under the project *KAR2-1036-AL-03 the same fund in current of 2005 delivery of the specialized equipment for test of corrosion resistance of materials will be made. The site on preparation of materials in created and equipped with the specialized equipment. In the report results, both fundamental works, and data on the applied works executed with various partners - National Atomic Company 'KazAtomProm', Ulba Metallurgical Plant, 'Tengizchevroil' Oil Company, Pharmacological Company named 'B-clay' are discussed, etc. In the report the basic directions of the further development of works and expansions of geography of cooperation are formulated

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

International Nuclear Information System (INIS)

Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

1990-01-01

Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

Phosphorus-hydrogen complexes in LEC-grown InP

Energy Technology Data Exchange (ETDEWEB)

Ulrici, W. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kwasniewski, A.; Czupalla, M.; Neubert, M. [Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

2005-03-01

In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm{sup -1}. All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm{sup -1} is due to a single hydrogen atom bonded to P in an indium vacancy (V{sub In}) and that the line at 2315.6 cm{sup -1} is due to the complex of four P-H bonds in an V{sub In}. In InP:H:D, this V{sub In}H{sub 4} complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V{sub In}H{sub n}D{sub m} complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The influence of pressure on the birefringence in semiconductor compounds ZnS, CuGaS2, and InPS4

International Nuclear Information System (INIS)

Lavrentyev, A.A.; Gabrelian, B.V.; Kulagin, B.B.; Nikiforov, I.Ya.; Sobolev, V.V.

2007-01-01

Using the modified method of augmented plane waves and the code WIEN2k the calculations of the electron band structure, densities of electron states, and imaginary part of dielectric response function were carried out for different polarization of the vector of electrical field ε xx and ε zz for the semiconductor compounds ZnS, CuGaS 2 , and InPS 4 . The calculations were performed both for undisturbed crystals and for distorted crystals due to the applied pressure. The compounds studied have the similar crystallographic structures: ZnS - sphalerite, CuGaS 2 - chalcopyrite, and InPS 4 - twice defective chalcopyrite. It is known, that in cubic ZnS there is no birefringence, whereas in CuGaS 2 and InPS 4 there is one. But CuGaS 2 has so called isotropic point (where ε xx =ε zz ) in the visible optical range, and InPS 4 has no such point. Our calculations of ε xx and ε zz have shown that in ZnS under the pressure the isotropic points arise, but in InPS 4 they do not exist. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

Science.gov (United States)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

International Nuclear Information System (INIS)

Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

2006-01-01

Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

DEFF Research Database (Denmark)

Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

2013-01-01

Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3.......Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3....

Formation mechanisms for the dominant kinks with different angles in InP nanowires.

Science.gov (United States)

Zhang, Minghuan; Wang, Fengyun; Wang, Chao; Wang, Yiqian; Yip, SenPo; Ho, Johnny C

2014-01-01

The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties.

Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

International Nuclear Information System (INIS)

Zdansky, K.; Gorodynskyy, V.; Kozak, H.; Pekarek, L.

2005-01-01

Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Highly doped InP as a low loss plasmonic material for mid-IR region.

Science.gov (United States)

Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

2016-12-12

We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

2004 Space Report: Environment and Strategy for Space Research at NATO's Research and Technology Organisation (RTO)

Science.gov (United States)

Woods-Vedeler, Jessica A.

2007-01-01

This report describes the motivation for and a strategy to enhance the NATO Research and Technology Organisation's (RTO) current space research effort to reflect NATO's growing military dependence on space systems. Such systems and services provided by these systems are critical elements of military operations. NATO uses space systems for operational planning and support, communication, radio navigation, multi-sensor and multi-domain demonstrations. Such systems are also used to promote regional stability. A quantitative analysis of work related to space in the NATO RTO showed that during the period of 1998 - 2004, 5% of the research pursued in the NATO RTO has been clearly focused on space applications. Challenging environmental and organizational barriers for increasing RTO space research were identified. In part, these include lack of sufficient space expertise representation on panels, the military sensitivity of space, current panel work loads and the need for specific technical recommendations from peers. A strategy for enhancing space research in the RTO is to create a limited-life Space Advisory Group (SAG) composed of Space Expert Consultants who are panel members with appropriate expertise and additional expertise from the nations. The SAG will recommend and find support in the nations for specific technical activities related to space in the areas of Space Science, Remote Sensing Data Analysis, Spacecraft Systems, Surveillance and Early Warning, Training and Simulation and Policy. An RTO Space Advisory Group will provide an organizational mechanism to gain recognition of RTO as a forum for trans-Atlantic defence space research and to enhance space research activities.

Roadmap for integration of InP based photonics and silicon electronics

NARCIS (Netherlands)

Williams, K.A.

2015-01-01

We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

Space Weather Research: Indian perspective

Science.gov (United States)

Bhardwaj, Anil; Pant, Tarun Kumar; Choudhary, R. K.; Nandy, Dibyendu; Manoharan, P. K.

2016-12-01

Space weather, just like its meteorological counterpart, is of extreme importance when it comes to its impact on terrestrial near- and far-space environments. In recent years, space weather research has acquired an important place as a thrust area of research having implications both in space science and technology. The presence of satellites and other technological systems from different nations in near-Earth space necessitates that one must have a comprehensive understanding not only of the origin and evolution of space weather processes but also of their impact on technology and terrestrial upper atmosphere. To address this aspect, nations across the globe including India have been investing in research concerning Sun, solar processes and their evolution from solar interior into the interplanetary space, and their impact on Earth's magnetosphere-ionosphere-thermosphere system. In India, over the years, a substantial amount of work has been done in each of these areas by various agencies/institutions. In fact, India has been, and continues to be, at the forefront of space research and has ambitious future programs concerning these areas encompassing space weather. This review aims at providing a glimpse of this Indian perspective on space weather research to the reader and presenting an up-to-date status of the same.

High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

Science.gov (United States)

Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

2014-06-11

The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

Integrated cloud infrastructure of the LIT JINR, PE “NULITS” and INP's Astana branch

Directory of Open Access Journals (Sweden)

Mazhitova Yelena

2018-01-01

Full Text Available The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity “Nazarbayev University Library and IT services” (PE “NULITS” Autonomous Education Organization “Nazarbayev University” (AO NU and The Institute of Nuclear Physics’ (INP's Astana branch.

Mid-IR optical properties of silicon doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

2017-01-01

of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

Effect of Fe inter-diffusion on properties of InP layers grown with addition of RE elements

International Nuclear Information System (INIS)

Prochazkova, O.; Zavadil, J.; Zdansky, K.

2005-01-01

This contribution reports the redistribution behaviour of Fe during the growth of InP layers from liquid phase with addition of some rare earth elements on semi-insulating InP:Fe substrates. We have studied the influence of different rare earths on the Fe diffusion into InP layer and compared it with the phenomenon of an extraction of iron from Fe doped materials into adjacent layers doped by Zn, Cd and Be, reported recently. In the case of Tm addition a conversion of electrical conductivity of InP layer to semi-insulating as a consequence of Fe diffusion has been observed while no significant Fe inter-diffusion has been confirmed in the presence of other investigated rare earth additions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy

Science.gov (United States)

De Luca, Marta; Polimeni, Antonio

2017-12-01

Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as building components of novel devices. The presence of wurtzite (WZ) phase in the lattice structure of non-nitride III-V NWs is one of the most surprising findings in these nanostructures: this phase, indeed, cannot be found in the same materials in the bulk form, where the zincblende (ZB) structure is ubiquitous, and therefore the WZ properties are poorly known. This review focuses on WZ InP NWs, because growth techniques have reached a high degree of control on the structural properties of this material, and optical studies performed on high-quality samples have allowed determining the most useful electronic properties, which are reviewed here. After an introduction summarizing the reasons for the interest in WZ InP nanowires (Sec. I), we give an overview on growth process and structural and optical properties of WZ InP NWs (Sec. II). In Sec. III, a complete picture of the energy and symmetry of the lowest-energy conduction and valence bands, as assessed by polarization-resolved photoluminescence (PL) and photoluminescence-excitation (PLE) studies is drawn and compared to all the available theoretical information. The elastic properties of WZ InP (determined by PL under hydrostatic pressure) and the radiative recombination dynamics of spatially direct and indirect (namely, occurring across the WZ/ZB interfaces) transitions are also discussed. Section IV, focuses on the magneto-optical studies of WZ InP NWs. The diagram of the energy levels of excitons in WZ materials—with and without magnetic field—is first provided. Then, all theoretical and experimental information available about the changes in the transport properties (i.e., carrier effective mass) caused by the ZB→WZ phase variation are reviewed. Different NW/magnetic field geometrical configurations, sensitive to polarization selection rules, highlight anisotropies in the diamagnetic shifts, Zeeman splitting

Space Research, Education, and Related Activities In the Space Sciences

Science.gov (United States)

Black, David

2002-01-01

The mission of this activity, known as the Cooperative Program in Space Sciences (CPSS), is to conduct space science research and leading-edge instrumentation and technology development, enable research by the space sciences communities, and to expedite the effective dissemination of space science research, technology, data, and information to the educational community and the general public. To fulfill this mission, the Universities Space Research Association (USRA) recruits and maintains a staff of scientific researchers, operates a series of guest investigator facilities, organizes scientific meetings and workshops, and encourages various interactions with students and university faculty members. This paper is the final report from this now completed Cooperative Agreement.

Design procedure for millimeter-wave InP DHBT stacked power amplifiers

DEFF Research Database (Denmark)

Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

2015-01-01

The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

InP integrated photonics : state of the art and future directions

NARCIS (Netherlands)

Williams, Kevin

2017-01-01

InP integrated circuits enable transceiver technologies with more than 200Gb/s per wavelength and 2Tb/s per fiber. Advances in monolithic integration are poised to reduce energy. remove assembly complexity, and sustain future year-on-year performance increases.

Temperature dependence of active photonic band gap in bragg-spaced quantum wells

Energy Technology Data Exchange (ETDEWEB)

Hu Zhiqiang; Wang Tao; Yu Chunchao; Xu Wei, E-mail: huzhiqianghzq@163.com [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei (China)

2011-02-01

A novel all-optical polarization switch of active photonic band gap structure based on non-resonant optical Stark effect bragg-spaced quantum wells was investigated and it could be compatible with the optical communication system. The theory is based on InGaAsP/InP Bragg-spaced quantum wells (BSQWs). Mainly through the design of the InGaAsP well layer component and InP barrier thickness to make the quantum-period cycle meet the bragg condition and the bragg frequency is equal to re-hole exciton resonance frequency. When a spectrally narrow control pulse is tuned within the forbidden gap, such BSQWs have been shown to exhibit large optical nonlinearities and ps recovery times, which can form T hz switch. However, the exciton binding energy of InGaAsP will be automatically separate at room temperature, so the effect of all-optical polarization switching of active photonic band gap bragg structure quantum wells can only be studied at low temperature. By a large number of experiments, we tested part of the material parameters of BSQWs in the temperature range 10-300K. On this basis, the InGaAsP and InP refractive index changes with wavelength, InP thermal expansion coefficient are studied and a relationship equation is established. Experimental results show that the bragg reflection spectra with temperature mainly is effected by InP refractive index changes with temperature. Our theoretical study and experiment are an instruction as a reference in the designs and experiments of future practical optical switches.

Temperature dependence of active photonic band gap in bragg-spaced quantum wells

International Nuclear Information System (INIS)

Hu Zhiqiang; Wang Tao; Yu Chunchao; Xu Wei

2011-01-01

A novel all-optical polarization switch of active photonic band gap structure based on non-resonant optical Stark effect bragg-spaced quantum wells was investigated and it could be compatible with the optical communication system. The theory is based on InGaAsP/InP Bragg-spaced quantum wells (BSQWs). Mainly through the design of the InGaAsP well layer component and InP barrier thickness to make the quantum-period cycle meet the bragg condition and the bragg frequency is equal to re-hole exciton resonance frequency. When a spectrally narrow control pulse is tuned within the forbidden gap, such BSQWs have been shown to exhibit large optical nonlinearities and ps recovery times, which can form T hz switch. However, the exciton binding energy of InGaAsP will be automatically separate at room temperature, so the effect of all-optical polarization switching of active photonic band gap bragg structure quantum wells can only be studied at low temperature. By a large number of experiments, we tested part of the material parameters of BSQWs in the temperature range 10-300K. On this basis, the InGaAsP and InP refractive index changes with wavelength, InP thermal expansion coefficient are studied and a relationship equation is established. Experimental results show that the bragg reflection spectra with temperature mainly is effected by InP refractive index changes with temperature. Our theoretical study and experiment are an instruction as a reference in the designs and experiments of future practical optical switches.

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

Science.gov (United States)

Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

2011-07-04

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

InP Devices For Millimeter-Wave Monolithic Circuits

Science.gov (United States)

Binari, S. C.; Neidert, R. E.; Dietrich, H. B.

1989-11-01

High efficiency, mm-wave operation has been obtained from lateral transferred-electron devices (TEDs) designed with a high resistivity region located near the cathode contact. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been achieved with cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. In addition, a monolithic oscillator incorporating the lateral TED has been demonstrated at 79.9 GHz. InP Schottky-barrier diodes have been fabricated using selective MeV ion implantation into semi-insulating InP substrates. Using Si implantation with energies of up to 6.0 MeV, n+ layers as deep as 3 μm with peak carrier concentrations of 2 x 1018 cm-3 have been obtained. These devices have been evaluated as mixers and detectors at 94 GHz and have demonstrated a conversion loss of 7.6 dB and a zero-bias detector sensitivity as high as 400 mV/mW.

Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

Science.gov (United States)

Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

2011-03-01

InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

International Nuclear Information System (INIS)

Longo, R C; Carrete, J; Alemany, M M G; Gallego, L J

2013-01-01

Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers. (paper)

Insulated InP (100) semiconductor by nano nucleus generation in pure water

Science.gov (United States)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

Surface passivation of InP solar cells with InAlAs layers

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

1993-01-01

The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, K; Wang, P; Pan, W W; Wu, X Y; Yue, L; Gong, Q; Wang, S M

2015-01-01

We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

Science.gov (United States)

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

Antireflection coating on InP for semiconductor detectors

International Nuclear Information System (INIS)

Hantehzadeh, M.R.; Ghoranneviss, M.; Sari, A.H.; Sahlani, F.; Shokuhi, A.; Shariati, M.

2006-01-01

Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM

Antireflection coating on InP for semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Hantehzadeh, M.R. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)]. E-mail: hanteh@sr.iau.ac.ir; Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sari, A.H. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sahlani, F. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shokuhi, A. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shariati, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)

2006-10-25

Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM.

Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

Science.gov (United States)

Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

2018-04-01

We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production.

Science.gov (United States)

Li, Qiang; Zheng, Maojun; Ma, Liguo; Zhong, Miao; Zhu, Changqing; Zhang, Bin; Wang, Faze; Song, Jingnan; Ma, Li; Shen, Wenzhong

2016-08-31

Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

Minority-carrier lifetime in InP as a function of light bias

Science.gov (United States)

Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors

International Nuclear Information System (INIS)

Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin; Liu, Jietao

2015-01-01

High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

X-ray structure amplitudes for GaAs and InP

International Nuclear Information System (INIS)

Pietsch, U.

1985-01-01

The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2013-01-01

The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model...

The effect of phosphorus and sulfur treatment on the surface properties of InP

Science.gov (United States)

Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

1988-01-01

Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

Formation and characterization of Ni nanostructures in porous InP - from crystallites to wires

International Nuclear Information System (INIS)

Gerngross, M.-D.; Hrkac, V.; Kienle, L.; Carstensen, J.; Foell, H.

2013-01-01

In this work the galvanic formation of Ni crystallites and Ni nanowires with very high aspect ratios (>1000:1) in porous InP is presented. By depositing a dielectric interlayer on the InP pore walls it is possible to produce very high aspect ratio Ni nanowires. The coercivity of these nanowires is about 100 Oe (in-plane) and 240 Oe (out-of-plane), while the coercivity of the crystallites lies in between these values. The in-plane remanence squareness of the Ni nanowires is very low (S ∼ 0.08), out-of-plane it is 0.36. For the Ni crystallites the remanence squareness lies in between the range given for the Ni nanowires. (author)

Synthesis and properties of ultra-long InP nanowires on glass.

Science.gov (United States)

Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

2016-12-16

We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP

International Nuclear Information System (INIS)

Shan, Y.Y.; Ling, C.C.; Fung, S.; Beling, C.D.; Zhao, Y.W.

2001-01-01

Positron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700 C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material. (orig.)

Effect of sulphur-doping on the formation of deep centers in n-type InP under irradiation

International Nuclear Information System (INIS)

Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1988-01-01

Effect of sulfur-doping on the efficiency of electron trap formation in InP under irradiation was studied using deep level capacity nonstationary spectroscopy method (DLCNS). Structures with Schottky barrier based on epitaxial InP films with ∼10μm thickness (n 0 =8x10 14 -6x10 17 cm -3 ) were irradiated with 60 Co γ-quanta at 40 deg C; the particle flux intensity made up ∼10 12 cm -2 xs -1 . Experimental results presented allow one to conclude that InP doping with sulfur up to n 0 =6x10 17 cm -3 in contrast to the case of silicon doping does not produce a notable effect on the electron trap formation efficiency under irradiation. The observed reduction of configuration-bistable M-center introduction rate in samples with n 0 >10 16 cm -3 is explained by the change of filling of E c -0.12 eV level belonging to unknown X defect

NASA advanced space photovoltaic technology-status, potential and future mission applications

Science.gov (United States)

Flood, Dennis J.; Piszczor, Michael, Jr.; Stella, Paul M.; Bennett, Gary L.

1989-01-01

The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 micrometer) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

Science.gov (United States)

Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

2016-12-01

We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

CERN Document Server

Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

International Nuclear Information System (INIS)

Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

1997-01-01

The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

2016-10-12

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

International Nuclear Information System (INIS)

Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

The etching of InP in HCl solutions : a chemical mechanism

NARCIS (Netherlands)

Notten, P.H.L.

1984-01-01

The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was

Electrical and thermal characterization of single and multi-finger InP DHBTs

DEFF Research Database (Denmark)

Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

2015-01-01

This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal ch...

Formation of quantum wires and dots on InP(001) by As/P exchange

International Nuclear Information System (INIS)

Yang, Haeyeon; Ballet, P.; Salamo, G. J.

2001-01-01

We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

Coordinating Space Nuclear Research Advancement and Education

International Nuclear Information System (INIS)

Bess, John D.; Webb, Jonathon A.; Gross, Brian J.; Craft, Aaron E.

2009-01-01

The advancement of space exploration using nuclear science and technology has been a goal sought by many individuals over the years. The quest to enable space nuclear applications has experienced many challenges such as funding restrictions; lack of political, corporate, or public support; and limitations in educational opportunities. The Center for Space Nuclear Research (CSNR) was established at the Idaho National Laboratory (INL) with the mission to address the numerous challenges and opportunities relevant to the promotion of space nuclear research and education.1 The CSNR is operated by the Universities Space Research Association and its activities are overseen by a Science Council comprised of various representatives from academic and professional entities with space nuclear experience. Program participants in the CSNR include academic researchers and students, government representatives, and representatives from industrial and corporate entities. Space nuclear educational opportunities have traditionally been limited to various sponsored research projects through government agencies or industrial partners, and dedicated research centers. Centralized research opportunities are vital to the growth and development of space nuclear advancement. Coordinated and focused research plays a key role in developing the future leaders in the space nuclear field. The CSNR strives to synchronize research efforts and provide means to train and educate students with skills to help them excel as leaders.

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

Science.gov (United States)

Kelrich, A.; Dubrovskii, V. G.; Calahorra, Y.; Cohen, S.; Ritter, D.

2015-02-01

We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.

Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

International Nuclear Information System (INIS)

Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

1985-01-01

Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

The Scintillation Prediction Observations Research Task (SPORT): A Multinational Science Mission using a CubeSat

Science.gov (United States)

Spann, J. F.; Habash Krause, L.; Swenson, C.; Heelis, R. A.; Bishop, R. L.; Le, G.; Abdu, M. A.; Durão, O.; Loures, L.; De Nardin, C. M.; Shibuya, L.; Casas, J.; Nash-STevenson, S.; Muralikrishana, P.; Costa, J. E. R.; Wrasse, C. M.; Fry, C. D.

2017-12-01

The Scintillation Prediction Observations Research Task (SPORT) is a 6U CubeSat pathfinder mission to address the very compelling but difficult problem of understanding the preconditions leading to equatorial plasma bubbles. The scientific literature describes the preconditions in both the plasma drifts and the density profiles related to bubble formations that occur several hours later in the evening. Most of the scientific discovery has resulted from observations at the Jicamarca Radio Observatory from Peru, a single site, within a single longitude sector. SPORT will provide a systematic study of the state of the pre-bubble conditions at all longitudes sectors to allow us to understand the differences between geography and magnetic geometry. This talk will present an overview of the mission and the anticipated data products. Products include global maps of scintillation occurrence as a function of local time, and magnetic conjugacy occurrence observations. SPORT is a multinational partnership between NASA, the Brazilian National Institute for Space Research (INPE), and the Technical Aeronautics Institute under the Brazilian Air Force Command Department (DCTA/ITA). It has been encouraged by U.S. Southern Command (SOUTHCOM) to foster increased cooperation and ties between academics, civilian space programs and the militaries. NASA Marshall Space Flight Center is coordinating this investigation by overseeing the launch to orbit and the flight instruments, which are being built by the Aerospace Corporation, University of Texas Dallas, Utah State University, and NASA Goddard Space Flight Center. The Brazilian partners are contributing the spacecraft, observatory integration and test, ground observation networks, and mission operations and data management. The science data will be distributed from and archived at the INPE/EMBRACE regional space-weather forecasting center in Brazil, and mirrored at the NASA GSFC Space Physics Data Facility (SPDF).

Effect of uniaxial stress on free and bismuth-bound excitons in InP

International Nuclear Information System (INIS)

Weber, G.; Ruehle, W.

1979-01-01

The reduction of the shear deformation potentials of holes bound to the isoelectronic impurity Bi in InP is determined by piezoluminescence. It is compared with the corresponding reduction for holes bound to the Coulomb-type acceptors C and Zn. The theory for an effective mass acceptor describes well the cases of C and Zn. However, additional effects as local strain and Stark fields must be involved in the case of Bi leading to an extremely large reduction of the deformation potentials. No change in binding energy with applied stress as well as no exchange splitting of the Bi-bound exciton can be detected within experimental accuracy. The stress dependence of the free exciton reflectance reveals values for the band deformation potentials and a value of 0.07 meV for the exchange splitting of the free exciton in InP. (author)

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

Science.gov (United States)

Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

2015-07-24

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

Study of discharge in quiescent plasma machine of the INPE

International Nuclear Information System (INIS)

Ferreira, J.G.; Ferreira, J.L.; Ludwig, G.O.; Maciel, H.S.

1988-12-01

Measurements of principal plasma parameters produced by quiescent plasma machine of the Instituto de Pesquisas Espaciais (INPE) for current of 500 mA and several values of pressure and discharge power are presented. A qualitative interpretation for obtained results is done and a simple model for plasma density is compared with experimental values. The conditions of cathode operation are also investigated. (M.C.K.)

Phosphine synthetic route features and postsynthetic treatment of InP quantum dots

International Nuclear Information System (INIS)

Mordvinova, Natalia; Vinokurov, Alexander; Dorofeev, Sergey; Kuznetsova, Tatiana; Znamenkov, Konstantin

2014-01-01

Highlights: • Quantum dots with average diameter of 3–5 nm were synthesized. • PH 3 was used as novel phosphorous precursor. • Electrophoresis was demonstrated to be an effective method of purification of QDs. • Photoeching leads to quantum yields about 20%. • The concentration and time dependencies for photoetching of QDs were obtained. -- Abstract: In this paper we report on the development of synthesis of InP quantum dots with a gaseous phosphine PH 3 as a source of phosphorus and myristic acid and TOP/TOPO as stabilizers. Samples synthesized using myristic acid as stabilizer at relatively low temperatures were found to contain admixture of In(OH) 3 . We studied the influence of HF concentration and duration of illumination on luminescence properties of InP quantum dots during photoetching process. Quantum yields of photoetched samples reached about 20%. Additionally, electrophoresis as a new technique of purification and size-depended separation of synthesized quantum dots was developed

Effect of reactor neutron radiation and temperature on the structure of InP single crystals

International Nuclear Information System (INIS)

Bojko, V.M.; Kolin, N.G.; Merkurisov, D.I.; Bublik, V.T.; Voronova, M.I.; Shcherbachev, K.D.

2006-01-01

The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast and full spectrum neutrons and subsequent heat treatment. A lattice period in InP single crystals decreases under neutron irradiation. Fast neutrons make the main contribution into the change of the lattice period. Availability of the thermal neutrons initiates the formation of Sn atoms, but does not make a significant influence on the change of the lattice period. Heat treatment of the irradiated samples up to 600 deg C causes the annealing of radiation defects and recovery of the lattice period. With increasing neutron fluences a lattice period becomes even higher than before irradiation [ru

Space research

International Nuclear Information System (INIS)

Tempelmayer, A.

2000-01-01

Space research in Austria began since 1969 and has its roots in Graz. An overview of the projects performed by Austrian organizations such as local network interconnection via satellites systems, MIGMAS (Microanalysis station), ALP-SAT (Autonomous Libration Point-Satellite), MIDAS (Micro-imaging dust analysis system), among others are described. (nevyjel)

Defect formation in n-type InP at elevated temperatures of irradiation

International Nuclear Information System (INIS)

Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1990-01-01

Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

Space Life Sciences Research and Education Program

Science.gov (United States)

Coats, Alfred C.

2001-01-01

Since 1969, the Universities Space Research Association (USRA), a private, nonprofit corporation, has worked closely with the National Aeronautics and Space Administration (NASA) to advance space science and technology and to promote education in those areas. USRA's Division of Space Life Sciences (DSLS) has been NASA's life sciences research partner for the past 18 years. For the last six years, our Cooperative Agreement NCC9-41 for the 'Space Life Sciences Research and Education Program' has stimulated and assisted life sciences research and education at NASA's Johnson Space Center (JSC) - both at the Center and in collaboration with outside academic institutions. To accomplish our objectives, the DSLS has facilitated extramural research, developed and managed educational programs, recruited and employed visiting and staff scientists, and managed scientific meetings.

Space research in the Netherlands 1980

International Nuclear Information System (INIS)

1981-01-01

In 1960, the Royal Netherlands Academy of Arts and Sciences established a committee with the task of coordinating space research in the Netherlands and maintaining the necessary international contacts. This committe, usually called GROC, has instituted four working groups, in which most of the Netherlands space research is concentrated. These groups are: Working Group for Solar and Stellar Space Research, Working Group for Cosmic Rays, Working Group for Photometry and the Working Group for Satellite Geodesy. General information on space research in the Netherlands Anno 1980 is given. Detailed data about the working groups, their work during 1980 and their programmes are presented, together with a survey of their scientific publications. A financial summary is also included. (Auth.)

Performance, size, mass, and cost estimates for projected 1kW EOL Si, InP, and GaAs arrays

Science.gov (United States)

Slifer, Luther W., Jr.

1991-01-01

One method of evaluating the potential of emerging solar cell and array technologies is to compare their projected capabilities in space flight applications to those of established Si solar cells and arrays. Such an application-oriented comparison provides an integrated view of the elemental comparisons of efficiency, radiation resistance, temperature sensitivity, size, mass, and cost in combination. In addition, the assumptions necessary to make the comparisons provide insights helpful toward determining necessary areas of development or evaluation. Finally, as developments and evaluations progress, the results can be used in more precisely defining the overall potential of the new technologies in comparison to existing technologies. The projected capabilities of Si, InP, and GaAs cells and arrays are compared.

AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

Directory of Open Access Journals (Sweden)

Abidri B.

2012-06-01

Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Structural and electronic properties of zigzag InP nanoribbons with Stone–Wales type defects

International Nuclear Information System (INIS)

Longo, R C; Carrete, J; Varela, L M; Gallego, L J

2016-01-01

By means of density-functional-theoretic calculations, we investigate the structural and electronic properties of a hexagonal InP sheet and of hydrogen-passivated zigzag InP nanoribbons (ZInPNRs) with Stone–Wales (SW)-type defects. Our results show that the influence of this kind of defect is not limited to the defected region but it leads to the formation of ripples that extend across the systems, in keeping with the results obtained recently for graphene and silicene sheets. The presence of SW defects in ZInPNRs causes an appreciable broadening of the band gap and transforms the indirect-bandgap perfect ZInPNR into a direct-bandgap semiconductor. An external transverse electric field, regardless of its direction, reduces the gap in both the perfect and defective ZInPNRs. (paper)

Highly doped InP as a low loss plasmonic material for mid-IR region

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

2016-01-01

by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

2013-01-01

In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

2014-01-01

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

An InP HBT sub-harmonic mixer for E-band wireless communication

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Krozer, Viktor

2010-01-01

This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

Scientific projection paper for space radiobiological research

International Nuclear Information System (INIS)

Vinograd, S.P.

1980-01-01

A nationale for the radiobiological research requirements for space is rooted in a national commitment to the exploration of space, mandated in the form of the National Space Act. This research is almost entirely centered on man; more specifically, on the effects of the space radiation environment on man and his protection from them. The research needs discussed in this presentation include the space radiation environment; dosimetry; radiation biology-high LET particles (dose/response); and operational countermeasures

Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

Science.gov (United States)

Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

2018-05-01

The elliptical polarization dependence of the two-photon absorption coefficient β in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan technique has been extended with consideration of multiple reflections. The Z-scan results have been fitted very well by the formula and β has been evaluated accurately. The three independent elements of the third-order nonlinear susceptibility tensor in InP have also been determined accurately from the elliptical polarization dependence of β.

Changes in structure of the short-range order of the InP melt when heated

International Nuclear Information System (INIS)

Glazov, V.M.; Dovletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

1977-01-01

An investigation of the temperature dependence of the InP viscosity has indicated an ''after-melting'' effect similar to that observed in other A 3 V 5 compounds having a sphalerite structure. The termodynamic parameters of the viscous flow of indium phosphide melt have been calculated, and a suggestion has been made on the loosening of the short-range order structure of the melt during the period preceding solidification. With the similarity in the behaviour of InP and of A 3 Sb compound melts as a basis, a suggestion has been put forward that the influence of the thermal dissociation upon the character of the changes in the short-range order structure directly after transition from the solid to the liquid phase is negligible

Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

Science.gov (United States)

Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

2010-09-01

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

New connecting elements for cascade photoelectric converters based on InP

Science.gov (United States)

Marichev, A. E.; Pushnyi, B. V.; Levin, R. V.; Lebedeva, N. M.; Prasolov, N. D.; Kontrosh, E. V.

2018-03-01

In this paper, we report on the initial studies of connecting elements for cascade photodetectors. The heterostructures used in this work are based on InP. As a connecting element, it is proposed to use nanocrystalline inclusions instead of the tunnel junction. GaP nanocrystals are most suitable for this purpose because this material does not cause absorption of the incident radiation.

Integrated InP frequency discriminator for Phase-modulated microwave photonic links.

Science.gov (United States)

Fandiño, J S; Doménech, J D; Muñoz, P; Capmany, J

2013-02-11

We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the first to include the optical detectors. The discriminator, designed as a linear filter in intensity, features preliminary SFDR values the range between 67 and 79 dB.Hz(2/3) for signal frequencies in the range of 5-9 GHz limited, in principle, by the high value of the optical losses arising from the use of several free space coupling devices in our experimental setup. As discussed, these losses can be readily reduced by the use of integrated spot-size converters improving the SFDR by 17.3 dB (84-96 dB.Hz(2/3)). Further increase up to a range of (104-116 dB.Hz(2/3)) is possible by reducing the system noise eliminating the EDFA employed in the setup and using a commercially available laser source providing higher output power and lower relative intensity noise. Other paths for improvement requiring a filter redesign to be linear in the optical field are also discussed.

Velocity auto-correlation and hot-electron diffusion constant in GaAs and InP

International Nuclear Information System (INIS)

Deb Roy, M.

1982-01-01

Auto-correlation functions of the fluctuations in the electron velocities transverse and parallel to the applied electric field are calculated by the Monte Carlo method for GaAs and InP at three different values of field strength which are around three times the threshold field for negative differential mobility in each case. From these the frequency-dependent diffusion coefficients transverse and parallel to the applied field and the figure of merit for noise performance when used in a microwave amplifying device are determined. The results indicate that the transverse auto-correlation function Csub(t)(s) falls nearly exponentially to zero with increasing interval s while the parallel function Csub(p)(s) falls sharply, attains a minimum and then rises towards zero. In each case a higher field gives a higher rate of fall and makes the correlation functions zero within a shorter interval. The transverses diffusion coefficient falls monotonically with the frequency but the parallel diffusion coefficient generally starts with a low value at low frequencies, rises to a maximum and then falls. InP, with a larger separation between the central and the satellite valleys, has a higher value of the low frequency transverse diffusion coefficient and a lower value of its parallel counterpart. The noise performance of microwave semiconductor amplifying devices depends mainly on the low frequency parallel diffusion constant and consequently devices made out of materials like InP with a large separation between valleys are likely to have better noise characteristics. (orig.)

Molecular beam epitaxial growth and characterization of zinc-blende ZnMgSe on InP (001)

International Nuclear Information System (INIS)

Sohel, Mohammad; Munoz, Martin; Tamargo, Maria C.

2004-01-01

High crystalline quality zinc-blende structure Zn (1-x) Mg x Se epitaxial layers were grown on InP (001) substrates by molecular beam epitaxy. Their band gap energies were determined as a function of Mg concentration and a linear dependence was observed. The band gap of the Zn (1-x) Mg x Se closely lattice matched to InP was found to be 3.59 eV at 77 K and the extrapolated value for zinc-blende MgSe was determined to be 3.74 eV. Quantum wells of Zn (1-x) Cd x Se with Zn (1-x) Mg x Se as the barrier layer were grown which exhibit near ultraviolet emission

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

International Nuclear Information System (INIS)

Joyce, Hannah J; Docherty, Callum J; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B; Gao Qiang; Tan, H Hoe; Jagadish, Chennupati

2013-01-01

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm 2 V −1 s −1 , which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s −1 . This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10 5   cm s −1 . These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices. (paper)

INP studies for a Tau-Charm Factory

International Nuclear Information System (INIS)

Skrinsky, A.

1994-01-01

This paper presents the results of studies undertaken at INP of options for a Tau Charm Factory. Three different beam options have been studied. First is a 'round beam option', allowing axially symmetric beams which yield high tau-pair productivity. The second option involves monochromatic beams, which enhances productivity for narrow c bar c states, gives good tau pair productions in a clean manner, and has a good resonant-to-nonresonant ratio. The third option allows longitudinal polarization, should it prove to be interesting. It is an easy option to implement because it only involves polarized electrons. Work on some of these options is described in terms of experiments on the VEPP-2 device

InP based lasers and optical amplifiers with wire-/dot-like active regions

DEFF Research Database (Denmark)

Reithmaier, J. P.; Somers, A.; Deubert, S.

2005-01-01

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

Science.gov (United States)

Ngo, Catherine

2001-01-01

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ab initio electronic band structure calculation of InP in the wurtzite phase

Science.gov (United States)

Dacal, Luis C. O.; Cantarero, Andrés

2011-05-01

We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a=0.4150 nm, c=0.6912 nm, and an internal parameter u=0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.

Space The New Medical Frontier / NASA Spinoffs Milestones in Space Research

Science.gov (United States)

Skip Navigation Bar Home Current Issue Past Issues Space The New Medical Frontier Past Issues / Fall 2007 ... the occasion. Photo courtesy of NIH Long-Term Space Research Until the advent of the ISS, research ...

EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf

2017-01-01

In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrate...

Raman spectroscopy for characterization of annealing of ion-implanted InP

International Nuclear Information System (INIS)

Myers, D.R.; Gourley, P.L.; Vaidyanathan, K.V.; Dunlap, H.L.

1983-01-01

Raman spectroscopy has been used as a noncontacting, nondestructive tool to evaluate the properties of Si + - and Be + implanted InP samples annealed at temperatures ranging from 600 to 750C using phospho-silicate glass (PSG) as the encapsulant. Carrier activation, carrier mobility and recovery of damage as a function of anneal temperature obtained from analysis of Raman data agree very well with independent electrical measurements. (author)

NASA Space Weather Center Services: Potential for Space Weather Research

Science.gov (United States)

Zheng, Yihua; Kuznetsova, Masha; Pulkkinen, Antti; Taktakishvili, A.; Mays, M. L.; Chulaki, A.; Lee, H.; Hesse, M.

2012-01-01

The NASA Space Weather Center's primary objective is to provide the latest space weather information and forecasting for NASA's robotic missions and its partners and to bring space weather knowledge to the public. At the same time, the tools and services it possesses can be invaluable for research purposes. Here we show how our archive and real-time modeling of space weather events can aid research in a variety of ways, with different classification criteria. We will list and discuss major CME events, major geomagnetic storms, and major SEP events that occurred during the years 2010 - 2012. Highlights of major tools/resources will be provided.

Electronic band structure calculations for GaxIn1−xASyP1−y alloys lattice matched to InP

International Nuclear Information System (INIS)

Bechiri, A; Benmakhlouf, F; Allouache, H; Bacha, S; Bouarissa, N

2012-01-01

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga x In 1−x As y P 1−y quarternary alloys lattice matched to InP. The effects of compositional variations are properly included in the calculations. Very good agreement is obtained between the calculated values and the available experimental data for the lattice–matched alloy to InP. The absorption at the fundamental optical gaps is found to be direct within a whole range of the y composition whatever the lattice-matching to the substrate of interest. The alloy system Ga x In 1−x As y P 1−y lattice matched to InP is suggested to be suitable for an efficient light emitting device (ELED) material.

Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors

International Nuclear Information System (INIS)

Zatko, B.; Dubecky, F.; Prochazkova, O.; Necas, V.

2007-01-01

This work deals with the study of three different electrode metallizations with the aim to form a Schottky barrier contact. Electrode geometry corresponds to the requirements of digital radiography systems. As substrates bulk Liquid Encapsulated Czochralski (LEC) SI InP wafers doped with Fe and Fe+Zn are used. Results of this study show that no one of the used metallization performs as a blocking contact. However, detectors with Ti/Pt/Au metallization attained a relatively good energy resolution of 7.0 keV in full-width at half-maximum (FWHM) and the charge collection efficiency (CCE) higher than 83% for 122 keV γ-photons at 255 K. The development of SI InP radiation detectors and in particular their electrode technology is discussed in the light of observed results

Indium phosphide solar cell research in the United States: Comparison with non-photovoltaic sources

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1989-01-01

Highlights of the InP solar cell research program are presented. Homojunction cells with efficiencies approaching 19 percent are demonstrated, while 17 percent is achieved for ITO/InP cells. The superior radiation resistance of the two latter cell configurations over both Si and GaAs cells has been shown. InP cells aboard the LIPS3 satellite show no degradation after more than a year in orbit. Computed array specific powers are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Hopping conductivity via deep impurity states in InP

International Nuclear Information System (INIS)

Kuznetsov, V.P.; Messerer, M.A.; Omel'yanovskij, Eh.M.

1984-01-01

Hopping (epsilon 3 ) and Mott conductivities via deep impurity compounds with localization radius below 10 A have been studied using as an example Mn in InP. It is shown, that the existing theory of hopping conductivity in low-alloyed semiconductors with Na 3 << 1 can be Used for the case of deep centres as successfully as for the case of insignificant hydrogen-like impurities. Fundamental parameters of the theory: localization radius of wave function of deep impurities, state density near the Fermi level, mean hop length, are determined

Optical properties of ion-implanted InP and GaAs: Selectivity-excited photoluminescence spectra

International Nuclear Information System (INIS)

Makita, Yunosuke; Yamada, Akimasa; Kimura, Shinji; Niki, Shigeru; Yoshinaga, Hiroshi; Matsumori, Tokue; Iida, Tsutomu; Uekusa, Ichiro

1993-01-01

Implantation of Mg+ ions was carried out into high purity InP grown by liquid encapsulated Czochralski method. Mg+ ion-implanted InP presented the formation of plural novel emissions with increasing Mg concentration, [Mg] in the low temperature photoluminescence spectra. Selectively-excited photoluminescence (SPL) measurements were made to examine the features of two-hole replicas pertinent to the emissions of excitons bound to neutral Mg and residual Zn acceptors. Systematic variation of the emission intensities from the two types of two-hole replicas was found to be utilized for the evaluation of ion-implanted materials. The significant discrepancy of emission spectra between PL and SPL was attributed to the difference of the depth examined by using the excitation light with high and low absorption coefficient. The results revealed that the diffusion of ion-implanted Mg is extremely enhanced when [Mg] exceeds 1x10 17 cm -3

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Science.gov (United States)

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Animals in Space From Research Rockets to the Space Shuttle

CERN Document Server

Burgess, Colin

2007-01-01

Many readers will doubtless be astonished to learn that animals were being fired aloft in U.S. and Soviet research rockets in the late 1940s. In fact most people not only believe that the Russian space dog Laika was the first canine to be launched into space, but also that the high-profile, precursory Mercury flights of chimps Ham and Enos were the only primate flights conducted by the United States. In fact, both countries had sent literally dozens of animals aloft for many years prior to these events and continued to do so for many years after. Other latter-day space nations, such as France and China, would also begin to use animals in their own space research. Animals in Space will explain why dogs, primates, mice and other rodents were chosen and tested, at a time when dedicated scientists from both space nations were determined to establish the survivability of human subjects on both ballistic and orbital space flights. It will also recount the way this happened; the secrecy involved and the methods empl...

InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

Energy Technology Data Exchange (ETDEWEB)

Catana, A. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Broom, R.F. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Germann, R. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Roentgen, P. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland))

1993-04-01

The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the 100 direction, the growth is uniform and defect-free, leasing to a plane surface. In the orthogonal 110 direction 60 twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. (orig.)

Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

DEFF Research Database (Denmark)

Godin, Jean; Nodjiadjim, V.; Riet, Muriel

2008-01-01

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...... applications of interest....

Comprehensive report of aeropropulsion, space propulsion, space power, and space science applications of the Lewis Research Center

Science.gov (United States)

1988-01-01

The research activities of the Lewis Research Center for 1988 are summarized. The projects included are within basic and applied technical disciplines essential to aeropropulsion, space propulsion, space power, and space science/applications. These disciplines are materials science and technology, structural mechanics, life prediction, internal computational fluid mechanics, heat transfer, instruments and controls, and space electronics.

Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

International Nuclear Information System (INIS)

Delaney, A.; Chin, K.; Street, S.; Newman, F.; Aguilar, L.; Ignatiev, A.; Monier, C.; Velela, M.; Freundlich, A.

1998-01-01

This work reports the first InP solar cells, InP/In 0.53 Ga 0.47 As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

Science.gov (United States)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Dopant-free twinning superlattice formation in InSb and InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

2017-11-15

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High-efficiency red electroluminescent device based on multishelled InP quantum dots.

Science.gov (United States)

Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

2016-09-01

We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

Dopant-free twinning superlattice formation in InSb and InP nanowires

International Nuclear Information System (INIS)

Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

2017-01-01

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils

2016-01-01

In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the outpu...

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

Science.gov (United States)

Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

2000-01-01

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

Biological constraints limit the use of rapamycin-inducible FKBP12-Inp54p for depleting PIP2 in dorsal root ganglia neurons.

Science.gov (United States)

Coutinho-Budd, Jaeda C; Snider, Samuel B; Fitzpatrick, Brendan J; Rittiner, Joseph E; Zylka, Mark J

2013-09-08

Rapamycin-induced translocation systems can be used to manipulate biological processes with precise temporal control. These systems are based on rapamycin-induced dimerization of FK506 Binding Protein 12 (FKBP12) with the FKBP Rapamycin Binding (FRB) domain of mammalian target of rapamycin (mTOR). Here, we sought to adapt a rapamycin-inducible phosphatidylinositol 4,5-bisphosphate (PIP2)-specific phosphatase (Inp54p) system to deplete PIP2 in nociceptive dorsal root ganglia (DRG) neurons. We genetically targeted membrane-tethered CFP-FRBPLF (a destabilized FRB mutant) to the ubiquitously expressed Rosa26 locus, generating a Rosa26-FRBPLF knockin mouse. In a second knockin mouse line, we targeted Venus-FKBP12-Inp54p to the Calcitonin gene-related peptide-alpha (CGRPα) locus. We hypothesized that after intercrossing these mice, rapamycin treatment would induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in CGRP+ DRG neurons. In control experiments with cell lines, rapamycin induced translocation of Venus-FKBP12-Inp54p to the plasma membrane, and subsequent depletion of PIP2, as measured with a PIP2 biosensor. However, rapamycin did not induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in FRBPLF-expressing DRG neurons (in vitro or in vivo). Moreover, rapamycin treatment did not alter PIP2-dependent thermosensation in vivo. Instead, rapamycin treatment stabilized FRBPLF in cultured DRG neurons, suggesting that rapamycin promoted dimerization of FRBPLF with endogenous FKBP12. Taken together, our data indicate that these knockin mice cannot be used to inducibly deplete PIP2 in DRG neurons. Moreover, our data suggest that high levels of endogenous FKBP12 could compete for binding to FRBPLF, hence limiting the use of rapamycin-inducible systems to cells with low levels of endogenous FKBP12.

Space Radiation Research at NASA

Science.gov (United States)

Norbury, John

2016-01-01

The harmful effects of space radiation on astronauts is one of the most important limiting factors for human exploration of space beyond low Earth orbit, including a journey to Mars. This talk will present an overview of space radiation issues that arise throughout the solar system and will describe research efforts at NASA aimed at studying space radiation effects on astronauts, including the experimental program at the NASA Space Radiation Laboratory at Brookhaven National Laboratory. Recent work on galactic cosmic ray simulation at ground based accelerators will also be presented. The three major sources of space radiation, namely geomagnetically trapped particles, solar particle events and galactic cosmic rays will be discussed as well as recent discoveries of the harmful effects of space radiation on the human body. Some suggestions will also be given for developing a space radiation program in the Republic of Korea.

Optical properties of InxGa1-xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

International Nuclear Information System (INIS)

Fang, Hsin-Chiao; Liu, Chuan-Pu; Dhara, Sandip

2011-01-01

Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga + ions with fluences of 1 x 10 16 -1.5 x 10 17 cm -2 followed by post-annealing treatment at 750 o C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga + -implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In x Ga 1-x P phase is formed at a critical fluence of 7 x 10 16 cm -2 . The newly grown phase was identified with the appearance of Ga rich TO InP and In rich TO GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.

Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

NARCIS (Netherlands)

Tassaert, M.; Dorren, H.J.S.; Roelkens, G.; Raz, O.

2012-01-01

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

Monte Carlo investigation of minority electron transport in InP

International Nuclear Information System (INIS)

Osman, M.A.; Grubin, H.L.

1989-01-01

This paper discusses the investigation of the transport of minority electrons in p-type InP for acceptor doping level of 10 18 cm 3 using Monte Carlo procedures. It is found that the velocity of minority electrons are significantly lower than that of majority electrons for fields below 15 kV/cm and slightly higher at higher fields. The study shows that the interaction between the electrons and majority holes leads to reducing the mobility of electrons from 2000 cm 2 /Vs to 1500 cm 2 /Vs

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

International Nuclear Information System (INIS)

Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

Setting Priorities for Space Research: Opportunities and Imperatives

Science.gov (United States)

Dutton, John A.; Abelson, Philip H.; Beckwith, Steven V. W.; Bishop, William P.; Byerly, Radford, Jr.; Crowe, Lawson; Dews, Peter; Garriott, Owen K.; Lunine, Jonathan; Macauley, Molly K.

1992-01-01

This report represents the first phase of a study by a task group convened by the Space Studies Board to ascertain whether it should attempt to develop a methodology for recommending priorities among the various initiatives in space research (that is, scientific activities concerned with phenomena in space or utilizing observations from space). The report argues that such priority statements by the space research community are both necessary and desirable and would contribute to the formulation and implementation of public policy. The report advocates the establishment of priorities to enhance effective management of the nation's scientific research program in space. It argues that scientific objectives and purposes should determine how and under what circumstances scientific research should be done. The report does not take a position on the controversy between advocates of manned space exploration and those who favor the exclusive use of unmanned space vehicles. Nor does the report address questions about the value or appropriateness of Space Station Freedom or proposals to establish a permanent manned Moon base or to undertake a manned mission to Mars. These issues lie beyond the charge to the task group.

Changes of surface electron states of InP under soft X-rays irradiation

International Nuclear Information System (INIS)

Yang Zhian; Yang Zushen; Jin Tao; Qui Rexi; Cui Mingqi; Liu Fengqin

1999-01-01

Changes of surface electronic states of InP under 1 keV X-ray irradiation is studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet ray energy spectroscopy (UPS). The results show that the soft X-ray irradiation has little effect on In atoms but much on P atoms. The authors analysed the mechanism of irradiation and explained the major effect

Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

International Nuclear Information System (INIS)

Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

2013-01-01

We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

New spaces for researching postgraduate Education research in ...

African Journals Online (AJOL)

... understandings and ideas of/about Education research. Although the project described in this article has ended, we found that in the third space of the interactive experienced moment fresh questions about the knowledge produced by postgraduate Education researchers in South Africa, at the critical historical moment of ...

Predicting Space Weather: Challenges for Research and Operations

Science.gov (United States)

Singer, H. J.; Onsager, T. G.; Rutledge, R.; Viereck, R. A.; Kunches, J.

2013-12-01

Society's growing dependence on technologies and infrastructure susceptible to the consequences of space weather has given rise to increased attention at the highest levels of government as well as inspired the need for both research and improved space weather services. In part, for these reasons, the number one goal of the recent National Research Council report on a Decadal Strategy for Solar and Space Physics is to 'Determine the origins of the Sun's activity and predict the variations in the space environment.' Prediction of conditions in our space environment is clearly a challenge for both research and operations, and we require the near-term development and validation of models that have sufficient accuracy and lead time to be useful to those impacted by space weather. In this presentation, we will provide new scientific results of space weather conditions that have challenged space weather forecasters, and identify specific areas of research that can lead to improved capabilities. In addition, we will examine examples of customer impacts and requirements as well as the challenges to the operations community to establish metrics that enable the selection and transition of models and observations that can provide the greatest economic and societal benefit.

NASA Space Biology Plant Research for 2010-2020

Science.gov (United States)

Levine, H. G.; Tomko, D. L.; Porterfield, D. M.

2012-01-01

The U.S. National Research Council (NRC) recently published "Recapturing a Future for Space Exploration: Life and Physical Sciences Research for a New Era" (http://www.nap.edu/catalog.php?record id=13048), and NASA completed a Space Biology Science Plan to develop a strategy for implementing its recommendations ( http://www.nasa.gov/exploration/library/esmd documents.html). The most important recommendations of the NRC report on plant biology in space were that NASA should: (1) investigate the roles of microbial-plant systems in long-term bioregenerative life support systems, and (2) establish a robust spaceflight program of research analyzing plant growth and physiological responses to the multiple stimuli encountered in spaceflight environments. These efforts should take advantage of recently emerged analytical technologies (genomics, transcriptomics, proteomics, metabolomics) and apply modern cellular and molecular approaches in the development of a vigorous flight-based and ground-based research program. This talk will describe NASA's strategy and plans for implementing these NRC Plant Space Biology recommendations. New research capabilities for Plant Biology, optimized by providing state-of-the-art automated technology and analytical techniques to maximize scientific return, will be described. Flight experiments will use the most appropriate platform to achieve science results (e.g., ISS, free flyers, sub-orbital flights) and NASA will work closely with its international partners and other U.S. agencies to achieve its objectives. One of NASA's highest priorities in Space Biology is the development research capabilities for use on the International Space Station and other flight platforms for studying multiple generations of large plants. NASA will issue recurring NASA Research Announcements (NRAs) that include a rapid turn-around model to more fully engage the biology community in designing experiments to respond to the NRC recommendations. In doing so, NASA

Sulfur as a surface passivation for InP

Science.gov (United States)

Iyer, R.; Chang, R. R.; Lile, D. L.

1988-01-01

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2008-01-01

The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (...

Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

KAUST Repository

Zheng, Maxwell

2015-08-25

The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

International Nuclear Information System (INIS)

Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

2006-01-01

A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

Optimum third harmonic generation efficiency in the far infrared in Si, GaAs and InP

International Nuclear Information System (INIS)

Brazis, R.; Raguotis, R.; Siegrist, M.R.

1997-12-01

We investigate by means of a Monte Carlo technique the nonlinear drift response of electrons to high power electromagnetic waves in Si, GaAs and InP. The first and third harmonic drift velocity amplitudes and phases are presented as function of the pumping wave frequency in the range of 200 to 500 GHz. The third harmonic generation efficiency is found to reach a maximum at a pumping wave amplitude of 10-25 kV/cm depending on the material and the lattice temperature. Cooling down to liquid nitrogen temperature results in an improvement of the efficiency by a factor of 2 to 10, depending on the material and the pumping wave amplitude. Cooled GaAs and InP are both an order of magnitude more efficient than Si at ambient temperature, for which to date the best measured performance has been reported. (author) 2 figs., 5 refs

In-space research, technology and engineering experiments and Space Station

Science.gov (United States)

Tyson, Richard; Gartrell, Charles F.

1988-01-01

The NASA Space Station will serve as a technology research laboratory, a payload-servicing facility, and a large structure fabrication and assembly facility. Space structures research will encompass advanced structural concepts and their dynamics, advanced control concepts, sensors, and actuators. Experiments dealing with fluid management will gather data on such fundamentals as multiphase flow phenomena. As requirements for power systems and thermal management grow, experiments quantifying the performance of energy systems and thermal management concepts will be undertaken, together with expanded efforts in the fields of information systems, automation, and robotics.

Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

International Nuclear Information System (INIS)

Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

2005-01-01

We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

Building Space Management | Climate Neutral Research Campuses | NREL

Science.gov (United States)

, repurposing underused space and through the use of electronic media. Several space management principles can Building Space Management Building Space Management Building space represents one of the largest recruiting and successful acquisition of research funding. Learn more about how space management is necessary

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Habib, C.; Chen, L.R.; Leijtens, X.J.M.; Vries, de T.; Robbins, D.J.; Capmany, J.

2011-01-01

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in

Space weather monitoring and forecasting in South America: products from the user requests to the development of regional magnetic indices and GNSS vertical error maps

Science.gov (United States)

Denardini, Clezio Marcos; Padilha, Antonio; Takahashi, Hisao; Souza, Jonas; Mendes, Odim; Batista, Inez S.; SantAnna, Nilson; Gatto, Rubens; Costa, D. Joaquim

On August 2007 the National Institute for Space Research started a task force to develop and operate a space weather program, which is kwon by the acronyms Embrace that stands for the Portuguese statement “Estudo e Monitoramento BRAasileiro de Clima Espacial” Program (Brazilian Space Weather Study and Monitoring program). The main purpose of the Embrace Program is to monitor the space climate and weather from sun, interplanetary space, magnetosphere and ionosphere-atmosphere, and to provide useful information to space related communities, technological, industrial and academic areas. Since then we have being visiting several different space weather costumers and we have host two workshops of Brazilian space weather users at the Embrace facilities. From the inputs and requests collected from the users the Embrace Program decided to monitored several physical parameters of the sun-earth environment through a large ground base network of scientific sensors and under collaboration with space weather centers partners. Most of these physical parameters are daily published on the Brazilian space weather program web portal, related to the entire network sensors available. A comprehensive data bank and an interface layer are under development to allow an easy and direct access to the useful information. Nowadays, the users will count on products derived from a GNSS monitor network that covers most of the South American territory; a digisonde network that monitors the ionospheric profiles in two equatorial sites and in one low latitude site; several solar radio telescopes to monitor solar activity, and a magnetometer network, besides a global ionospheric physical model. Regarding outreach, we publish a daily bulletin in Portuguese with the status of the space weather environment on the Sun, in the Interplanetary Medium and close to the Earth. Since December 2011, all these activities are carried out at the Embrace Headquarter, a building located at the INPE's main campus

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

Science.gov (United States)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Fulltext PDF

Indian Academy of Sciences (India)

Universität zu Berlin, Ger- many. Lopez Sauceda, Juan, Universidad Autonoma ... Lu, Xin Bao, Potsdam Institute for Climate Impact Research,. Germany. Macau, Elbert, National Institute for Space Research -. INPE, Brazil. Madhavan, Vinodh, Institute ...

Space Weather Research at the National Science Foundation

Science.gov (United States)

Moretto, T.

2015-12-01

There is growing recognition that the space environment can have substantial, deleterious, impacts on society. Consequently, research enabling specification and forecasting of hazardous space effects has become of great importance and urgency. This research requires studying the entire Sun-Earth system to understand the coupling of regions all the way from the source of disturbances in the solar atmosphere to the Earth's upper atmosphere. The traditional, region-based structure of research programs in Solar and Space physics is ill suited to fully support the change in research directions that the problem of space weather dictates. On the observational side, dense, distributed networks of observations are required to capture the full large-scale dynamics of the space environment. However, the cost of implementing these is typically prohibitive, especially for measurements in space. Thus, by necessity, the implementation of such new capabilities needs to build on creative and unconventional solutions. A particularly powerful idea is the utilization of new developments in data engineering and informatics research (big data). These new technologies make it possible to build systems that can collect and process huge amounts of noisy and inaccurate data and extract from them useful information. The shift in emphasis towards system level science for geospace also necessitates the development of large-scale and multi-scale models. The development of large-scale models capable of capturing the global dynamics of the Earth's space environment requires investment in research team efforts that go beyond what can typically be funded under the traditional grants programs. This calls for effective interdisciplinary collaboration and efficient leveraging of resources both nationally and internationally. This presentation will provide an overview of current and planned initiatives, programs, and activities at the National Science Foundation pertaining to space weathe research.

Danish Space Research Institute

International Nuclear Information System (INIS)

1991-01-01

The present report presents a description of the activities and finances of the Danish Space Reserach Institute during 1989 and 1990. The research deals with infrared astronomy (ISOPHOT), X-ray astronomy (EXPECT/SODART), hard X-ray astronomy (WATCH), satellite projects and sounding rocket experiments. (CLS)

Aviation & Space Weather Policy Research: Integrating Space Weather Observations & Forecasts into Operations

Science.gov (United States)

Fisher, G.; Jones, B.

2006-12-01

The American Meteorological Society and SolarMetrics Limited are conducting a policy research project leading to recommendations that will increase the safety, reliability, and efficiency of the nation's airline operations through more effective use of space weather forecasts and information. This study, which is funded by a 3-year National Science Foundation grant, also has the support of the Federal Aviation Administration and the Joint Planning and Development Office (JPDO) who is planning the Next Generation Air Transportation System. A major component involves interviewing and bringing together key people in the aviation industry who deal with space weather information. This research also examines public and industrial strategies and plans to respond to space weather information. The focus is to examine policy issues in implementing effective application of space weather services to the management of the nation's aviation system. The results from this project will provide government and industry leaders with additional tools and information to make effective decisions with respect to investments in space weather research and services. While space weather can impact the entire aviation industry, and this project will address national and international issues, the primary focus will be on developing a U.S. perspective for the airlines.

Space Biology Model Organism Research on the Deep Space Gateway to Pioneer Discovery and Advance Human Space Exploration

Science.gov (United States)

Sato, K. Y.; Tomko, D. L.; Levine, H. G.; Quincy, C. D.; Rayl, N. A.; Sowa, M. B.; Taylor, E. M.; Sun, S. C.; Kundrot, C. E.

2018-02-01

Model organisms are foundational for conducting physiological and systems biology research to define how life responds to the deep space environment. The organisms, areas of research, and Deep Space Gateway capabilities needed will be presented.

Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array

NARCIS (Netherlands)

Steenbergen, C.A.M.; Vreede, de L.C.N.; Dam, van C.; Scholtes, T.L.M.; Smit, M.K.; Tauritz, J.L.; Pedersen, J.W.; Moerman, I.; Verbeek, B.H.; Baets, R.G.F.

1995-01-01

An integrated 4-channel WDM-receiver frontend with 1 GHz channel bandwidth is described. The receiver consists of an integrated wavelength demultiplexer with photodiodes in InP technology connected through bond wires with a 4 channel Si bipolar transimpedance amplifier mounted on an epoxy board. The

Research Opportunities on board Virgin Galactic's SpaceShipTwo

Science.gov (United States)

Attenborough, S.; Pomerantz, W.; Stephens, K.

2013-09-01

Virgin Galactic is building the world's first commercial spaceline. Our suborbital spaceflight system, pictured in Figure 1, consists of two vehicles: WhiteKnightTwo (WK2) and SpaceShipTwo (SS2). WhiteKnightTwo is a four-engine, dual-fuselage jet aircraft capable of high-altitude heavy lift missions, including, but not limited to fulfilling its role as a mothership for SpaceShipTwo, an air-launched, suborbital spaceplane capable of routinely reaching an apogee up to 110 kilometers. In conjunction, these two vehicles allow access to space and to regions of the atmosphere ranging from the troposphere to the thermosphere; additionally, they provide extended periods of microgravity in a reliable and affordable way. SpaceShipTwo, with a payload capacity of up to 1,300 lbs. (~600 kg), features payload mounting interfaces that are compatible with standard architectures such as NASA Space Shuttle Middeck Lockers, Cargo Transfer Bags, and server racks, in addition to custom structures. With the standard interface, payloads are allowed access to the large 17 inch diameter cabin windows for external observations. Each dedicated research flight will be accompanied by a Virgin Galactic Flight Test Engineer, providing an opportunity for limited in-flight interaction. In addition, tended payloads - a flight that includes the researcher and his or her payload - are also an option. At a price point that is highly competitive with parabolic aircraft and sounding rockets and significantly cheaper than orbital flights, SpaceShipTwo is a unique platform that can provide frequent and repeatable research opportunities. Suborbital flights on SpaceShipTwo offer researchers several minutes of microgravity time and views of the external environment in the upper atmosphere and in outer space. In addition to serving as an important research platform in and of itself, SpaceShipTwo also offers researchers a means to test, iterate, and calibrate experiments designed for orbital platforms

Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

Energy Technology Data Exchange (ETDEWEB)

Biermann, K.

2007-06-28

The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

Science.gov (United States)

Ozanyan, K. B.; Parbrook, P. J.; Hopkinson, M.; Whitehouse, C. R.; Sobiesierski, Z.; Westwood, D. I.

1997-07-01

Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

InAs nanowire formation on InP(001)

International Nuclear Information System (INIS)

Parry, H. J.; Ashwin, M. J.; Jones, T. S.

2006-01-01

The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

The Research-to-Operations-to-Research Cycle at NOAA's Space Weather Prediction Center

Science.gov (United States)

Singer, H. J.

2017-12-01

The provision of actionable space weather products and services by NOAA's Space Weather Prediction Center relies on observations, models and scientific understanding of our dynamic space environment. It also depends on a deep understanding of the systems and capabilities that are vulnerable to space weather, as well as national and international partnerships that bring together resources, skills and applications to support space weather forecasters and customers. While these activities have been evolving over many years, in October 2015, with the release of the National Space Weather Strategy and National Space Weather Action Plan (NSWAP) by National Science and Technology Council in the Executive Office of the President, there is a new coordinated focus on ensuring the Nation is prepared to respond to and recover from severe space weather storms. One activity highlighted in the NSWAP is the Operations to Research (O2R) and Research to Operations (R2O) process. In this presentation we will focus on current R2O and O2R activities that advance our ability to serve those affected by space weather and give a vision for future programs. We will also provide examples of recent research results that lead to improved operational capabilities, lessons learned in the transition of research to operations, and challenges for both the science and operations communities.

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

Science.gov (United States)

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

Science.gov (United States)

Tedeschi, D; De Luca, M; Granados Del Águila, A; Gao, Q; Ambrosio, G; Capizzi, M; Tan, H H; Christianen, P C M; Jagadish, C; Polimeni, A

2016-10-12

The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 (m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001 Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Ludovico Megalini

2018-02-01

Full Text Available We report on the use of InGaAsP strain-compensated superlattices (SC-SLs as a technique to reduce the defect density of Indium Phosphide (InP grown on silicon (InP-on-Si by Metal Organic Chemical Vapor Deposition (MOCVD. Initially, a 2 μm thick gallium arsenide (GaAs layer was grown with very high uniformity on exact oriented (001 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2 stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD; atomic force microscopy (AFM; transmission electron microscopy (TEM; and electron channeling contrast imaging (ECCI; which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer.

Investigation on electrical properties of diffusive p-n junctions in InP and solid solutions of InAssub(x)Psub(1-x)

International Nuclear Information System (INIS)

Agaev, Ya.; Atabaev, Kh.; Gazakov, O.

1977-01-01

Diodes from InP and from solid solutions of InAssub(0.6)Psub(0.4), InAssub(0.5)Psub(0.5) were obtained by the diffusion of Zn. The voltage-current characteristic was measured at a direct current in the temperature range from 80 to 300 K. The rectification factor is 10 4 and 2.5 -3.0 x10 2 , respectively, for InP and InAssub(x)Psub(1-x) p-n junctions. The lifetime, the series resistance and resistance of the p-n junction at a zero bias were calculated from an analysis of the voltage-current characteristics

New spaces for researching postgraduate Education research in ...

African Journals Online (AJOL)

We complement this stance with the ideas articulated by Kuhlen (2003) ... three spaces for interrogating postgraduate Education research offers fresh opportu- ..... Since science has a central role in the production of new knowledge, universal ...

An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

Science.gov (United States)

Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

2017-11-25

Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

Space Science Cloud: a Virtual Space Science Research Platform Based on Cloud Model

Science.gov (United States)

Hu, Xiaoyan; Tong, Jizhou; Zou, Ziming

Through independent and co-operational science missions, Strategic Pioneer Program (SPP) on Space Science, the new initiative of space science program in China which was approved by CAS and implemented by National Space Science Center (NSSC), dedicates to seek new discoveries and new breakthroughs in space science, thus deepen the understanding of universe and planet earth. In the framework of this program, in order to support the operations of space science missions and satisfy the demand of related research activities for e-Science, NSSC is developing a virtual space science research platform based on cloud model, namely the Space Science Cloud (SSC). In order to support mission demonstration, SSC integrates interactive satellite orbit design tool, satellite structure and payloads layout design tool, payload observation coverage analysis tool, etc., to help scientists analyze and verify space science mission designs. Another important function of SSC is supporting the mission operations, which runs through the space satellite data pipelines. Mission operators can acquire and process observation data, then distribute the data products to other systems or issue the data and archives with the services of SSC. In addition, SSC provides useful data, tools and models for space researchers. Several databases in the field of space science are integrated and an efficient retrieve system is developing. Common tools for data visualization, deep processing (e.g., smoothing and filtering tools), analysis (e.g., FFT analysis tool and minimum variance analysis tool) and mining (e.g., proton event correlation analysis tool) are also integrated to help the researchers to better utilize the data. The space weather models on SSC include magnetic storm forecast model, multi-station middle and upper atmospheric climate model, solar energetic particle propagation model and so on. All the services above-mentioned are based on the e-Science infrastructures of CAS e.g. cloud storage and

NASA Self-Assessment of Space Radiation Research

Science.gov (United States)

Cucinotta, Francis A.

2010-01-01

Space exploration involves unavoidable exposures to high-energy galactic cosmic rays whose penetration power and associated secondary radiation makes radiation shielding ineffective and cost prohibitive. NASA recognizing the possible health dangers from cosmic rays notified the U.S. Congress as early as 1959 of the need for a dedicated heavy ion accelerator to study the largely unknown biological effects of galactic cosmic rays on astronauts. Information and scientific tools to study radiation health effects expanded over the new decades as NASA exploration programs to the moon and preparations for Mars exploration were carried out. In the 1970 s through the early 1990 s a more than 3-fold increase over earlier estimates of fatal cancer risks from gamma-rays, and new knowledge of the biological dangers of high LET radiation were obtained. Other research has increased concern for degenerative risks to the central nervous system and other tissues at lower doses compared to earlier estimates. In 1996 a review by the National Academy of Sciences Space Science Board re-iterated the need for a dedicated ground-based accelerator facility capable of providing up to 2000 research hours per year to reduce uncertainties in risks projections and develop effective mitigation measures. In 1998 NASA appropriated funds for construction of a dedicated research facility and the NASA Space Radiation Laboratory (NSRL) opened for research in October of 2003. This year marks the 8th year of NSRL research were about 1000 research hours per year have been utilized. In anticipation of the approaching ten year milestone, funded investigators and selected others are invited to participate in a critical self-assessment of NSRL research progress towards NASA s goals in space radiation research. A Blue and Red Team Assessment format has been integrated into meeting posters and special plenary sessions to allow for a critical debate on the progress of the research and major gaps areas. Blue

InP and GaAs characterization with variable stoichiometry obtained by molecular spray

Science.gov (United States)

Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

1979-01-01

Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

Space Weather Forecasting and Supporting Research in the USA

Science.gov (United States)

Pevtsov, A. A.

2017-12-01

In the United State, scientific research in space weather is funded by several Government Agencies including the National Science Foundation (NSF) and the National Aeronautics and Space Agency (NASA). For civilian and commercial purposes, space weather forecast is done by the Space Weather Prediction Center (SWPC) of the National Oceanic and Atmospheric Administration (NOAA). Observational data for modeling come from the network of groundbased observatories funded via various sources, as well as from the instruments on spacecraft. Numerical models used in forecast are developed in framework of individual research projects. The article provides a brief review of current state of space weather-related research and forecasting in the USA.

Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

International Nuclear Information System (INIS)

Cherkaoui, K.

1998-01-01

The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

3D thermal simulations and modeling of multi-finger InP DHBTs for millimeter-wave power amplifiers

DEFF Research Database (Denmark)

Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

2017-01-01

This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation...

Space Weather Forecasting and Research at the Community Coordinated Modeling Center

Science.gov (United States)

Aronne, M.

2015-12-01

The Space Weather Research Center (SWRC), within the Community Coordinated Modeling Center (CCMC), provides experimental research forecasts and analysis for NASA's robotic mission operators. Space weather conditions are monitored to provide advance warning and forecasts based on observations and modeling using the integrated Space Weather Analysis Network (iSWA). Space weather forecasters come from a variety of backgrounds, ranging from modelers to astrophysicists to undergraduate students. This presentation will discuss space weather operations and research from an undergraduate perspective. The Space Weather Research, Education, and Development Initiative (SW REDI) is the starting point for many undergraduate opportunities in space weather forecasting and research. Space weather analyst interns play an active role year-round as entry-level space weather analysts. Students develop the technical and professional skills to forecast space weather through a summer internship that includes a two week long space weather boot camp, mentorship, poster session, and research opportunities. My unique development of research projects includes studying high speed stream events as well as a study of 20 historic, high-impact solar energetic particle events. This unique opportunity to combine daily real-time analysis with related research prepares students for future careers in Heliophysics.

NASA-HBCU Space Science and Engineering Research Forum Proceedings

International Nuclear Information System (INIS)

Sanders, Y.D.; Freeman, Y.B.; George, M.C.

1989-01-01

The proceedings of the Historically Black Colleges and Universities (HBCU) forum are presented. A wide range of research topics from plant science to space science and related academic areas was covered. The sessions were divided into the following subject areas: Life science; Mathematical modeling, image processing, pattern recognition, and algorithms; Microgravity processing, space utilization and application; Physical science and chemistry; Research and training programs; Space science (astronomy, planetary science, asteroids, moon); Space technology (engineering, structures and systems for application in space); Space technology (physics of materials and systems for space applications); and Technology (materials, techniques, measurements)

Geospace monitoring for space weather research and operation

Directory of Open Access Journals (Sweden)

Nagatsuma Tsutomu

2017-01-01

Full Text Available Geospace, a space surrounding the Earth, is one of the key area for space weather. Because geospace environment dynamically varies depending on the solar wind conditions. Many kinds of space assets are operating in geospace for practical purposes. Anomalies of space assets are sometimes happened because of space weather disturbances in geospace. Therefore, monitoring and forecasting of geospace environment is very important tasks for NICT's space weather research and development. To monitor and to improve forecasting model, fluxgate magnetometers and HF radars are operated by our laboratory, and its data are used for our research work, too. We also operate real-time data acquisition system for satellite data, such as DSCOVR, STEREO, and routinely received high energy particle data from Himawari-8. Based on these data, we are monitoring current condition of geomagnetic disturbances, and that of radiation belt. Using these data, we have developed empirical models for relativistic electron flux at GEO and inner magnetosphere. To provide userfriendly information , we are trying to develop individual spacecraft anomaly risk estimation tool based on combining models of space weather and those of spacecraft charging, Current status of geospace monitoring, forecasting, and research activities are introduced.

Geospace monitoring for space weather research and operation

Science.gov (United States)

Nagatsuma, Tsutomu

2017-10-01

Geospace, a space surrounding the Earth, is one of the key area for space weather. Because geospace environment dynamically varies depending on the solar wind conditions. Many kinds of space assets are operating in geospace for practical purposes. Anomalies of space assets are sometimes happened because of space weather disturbances in geospace. Therefore, monitoring and forecasting of geospace environment is very important tasks for NICT's space weather research and development. To monitor and to improve forecasting model, fluxgate magnetometers and HF radars are operated by our laboratory, and its data are used for our research work, too. We also operate real-time data acquisition system for satellite data, such as DSCOVR, STEREO, and routinely received high energy particle data from Himawari-8. Based on these data, we are monitoring current condition of geomagnetic disturbances, and that of radiation belt. Using these data, we have developed empirical models for relativistic electron flux at GEO and inner magnetosphere. To provide userfriendly information , we are trying to develop individual spacecraft anomaly risk estimation tool based on combining models of space weather and those of spacecraft charging, Current status of geospace monitoring, forecasting, and research activities are introduced.

Effective surface passivation of InP nanowires by atomic-layer-deposited Al2O3 with POx interlayer

NARCIS (Netherlands)

Black, L.E.; Cavalli, A.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.; Kessels, W.M.M.

2017-01-01

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

DEFF Research Database (Denmark)

Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

2013-01-01

This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

International Nuclear Information System (INIS)

Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

2000-01-01

Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

Construção, usos sociais e busca de legitimidade das tecnologias da geoinformação do INPE | Construction, social uses and legitimation of geioinformational technologies at INPE

Directory of Open Access Journals (Sweden)

Paulo Augusto Sobral Escada

2012-04-01

Full Text Available Resumo Este artigo analisa a experiência de um grupo de cientistas e especialistas do Instituto Nacional de Pesquisas Espaciais (INPE que buscou consolidar e legitimar, ao longo de duas décadas, um modo próprio de produção de conhecimento científico e tecnológico. Mudanças de paradigma da Política de C&T, nos anos 1990, retiraram o apoio governamental de seus desenvolvimentos, obrigando-os a mudar suas ações estratégicas para que permitisse manter e preservar o modelo endógeno e autônomo de produção do conhecimento. O artigo trabalha com a perspectiva de Pierre Bourdieu (2001, aplicada ao campo científico, e a noção de “translação” de Bruno Latour (2000. A abordagem sociológica contempla e naturaliza os jogos de interesses e disputas no interior do campo científico, bem como destaca o processo de legitimação científica e social do conhecimento. O artigo tem como objetivo principal oferecer uma contribuição aos processos de discussão do modelo das políticas de CTI, principalmente na definição dos conhecimentos a serem produzidos e absorvidos pelo processo de desenvolvimento econômico e social do país. O artigo destaca a necessidade de se ampliar e aprofundar mecanismos democráticos, adotando maior inclusão e transparência nas disputas do campo científico e das políticas de C&T, condições básicas para alcançar um consenso geral que permita emergir um desenvolvimento desejado e planejado por boa parte da sociedade. Palavras-chave Sociologia do Conhecimento, produção de conhecimento, legitimação, democracia e desenvolvimento Abstract This article analyzes the experience of a group of scientists and specialists from the National Institute of Space Research (INPE who aimed to consolidate and legitimize, throughout two decades, its own way of producing scientific and technological knowledge. Changes of paradigm in Science, Technology and Innovation (STI Politics, during the 90s, removed governmental

MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

International Nuclear Information System (INIS)

Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

2010-01-01

To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

2015-01-01

Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

XRD Investigation of the relaxation of InAsP layers grown by CBE on (100) InP

NARCIS (Netherlands)

Marschner, T.H.; Leijs, M.R.; Vonk, H.; Wolter, J.H.

1998-01-01

We present X-ray diffraction (XRD) investigations of the influence of the substrate off-orientation on the relaxation of InAsP layers grown on InP by chemical beam epitaxy (CBE). Our measurements show that with beginning relaxation the As-concentration increases drastically and stays constant if the

Space Life Sciences Research: The Importance of Long-Term Space Experiments

Science.gov (United States)

1993-01-01

This report focuses on the scientific importance of long-term space experiments for the advancement of biological science and the benefit of humankind. It includes a collection of papers that explore the scientific potential provided by the capability to manipulate organisms by removing a force that has been instrumental in the evolution and development of all organisms. Further, it provides the scientific justification for why the long-term space exposure that can be provided by a space station is essential to conduct significant research.

Space education in developing countries in the information era, regional reality and new educational material tendencies: example, South America

Science.gov (United States)

Sausen, Tania Maria

The initial activities on space education began right after World War II, in the early 1950s, when USA and USSR started the Space Race. At that time, Space education was only and exclusively available to researchers and technicians working directly in space programs. This new area was restricted only to post-graduate programs (basically master and doctoral degree) or to very specific training programs dedicated for beginners. In South America, at that time there was no kind of activity on space education, simply because there was no activity in space research. In the beginning of the 1970s, Brazil, through INPE, had created masteral and doctoral courses on several space areas such as remote sensing and meteorology. Only in the mid-1980s did Brazil, after a UN request, create its specialisation course on remote sensing dedicated to Latin American professionals. At the same period, the Agustin Codazzi Institute (Bogota, Colombia) began to offer specialisation courses in remote sensing. In South America, educational space programs are currently being created for elementary and high schools and universities, but the author personally estimates that 90% of these educational programs still make use of traditional educational materials — such as books, tutorials, maps and graphics. There is little educational material that uses multimedia resources, advanced computing or communication methods and, basically, these are the materials that are best suited to conduct instructions in remote sensing, GIS, meteorology and astronomy.

75 GHz InP DHBT power amplifier based on two-stacked transistors

DEFF Research Database (Denmark)

Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

2017-01-01

In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP

Science.gov (United States)

Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

2016-12-01

We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈Sz 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for 〈Sz 〉 , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP.

Science.gov (United States)

Wheeler, Dustin D; Willmering, Matthew M; Sesti, Erika L; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J; Hayes, Sophia E

2016-12-01

We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈S z 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, E g . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k=0 bandedge, we define a new parameter, S opt (E ph ). Incorporating this revised element into the expression for 〈S z 〉, we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects. Copyright © 2016 Elsevier Inc. All rights reserved.

Pós graduação no INPE: a aliança pesquisa-desenvolvimento e ensino The graduate program at INPE: the research-development and education alliance

Directory of Open Access Journals (Sweden)

Maria Lígia Moreira

2009-04-01

Full Text Available A formação de recursos humanos em nível de pós-graduação no Brasil na área espacial teve início na década de 60, no Instituto Nacional de Pesquisas Espaciais. A fim de constituir um corpo de especialistas para desenvolver as suas atividades, o instituto inicialmente se apoiou em uma estrutura que combinou o envio de pesquisadores para o exterior com a criação de programas de pós-graduação. Com vistas a analisar as estratégias adotadas para a constituição do núcleo de formação de mestres e doutores, este trabalho apresenta as atividades da pós-graduação no instituto, com foco nas décadas de 60 e 70. Também é apresentado um quadro do perfil dos egressos dos programas de Astrofísica e Geofísica Espacial formados até 2005, com o objetivo de identificar e analisar parte dos resultados obtidos por este núcleo de formação.The development of graduate-level human resources in the space area in Brazil began in the 1960's, in the National Institute for Space Research. In order to build a team of specialists to develop its activities, the institute was initially supported by a structure that both sent researchers abroad and created graduate programs. This paper presents graduate course activities in the institute, especially in the 1960's and 1970's, with the purpose of analyzing the strategies adopted to build its graduate studies center. We also present a picture of the students that have completed the Astrophysics and Space Geophysics programs until 2005, with the purpose of identify and analyze part of the results obtained by this education center.

Multiple growths of epitaxial lift-off solar cells from a single InP substrate

International Nuclear Information System (INIS)

Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

2010-01-01

We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

On-chip patch antenna on InP substrate for short-range wireless communication at 140 GHz

DEFF Research Database (Denmark)

Dong, Yunfeng; Johansen, Tom Keinicke; Zhurbenko, Vitaliy

2017-01-01

This paper presents the design of an on-chip patch antenna on indium phosphide (InP) substrate for short-range wireless communication at 140 GHz. The antenna shows a simulated gain of 5.3 dBi with 23% bandwidth at 140 GHz and it can be used for either direct chip-to-chip communication or chip...

Extremely improved InP template and GaInAsP system growth on directly-bonded InP/SiO2-Si and InP/glass substrate

International Nuclear Information System (INIS)

Matsumoto, Keiichi; Makino, Tatsunori; Kimura, Katsuya; Shimomura, Kazuhiko

2013-01-01

We have developed an ultrathin InP template with low defect density on SiO 2 -Si and glass substrate by employing wet etching and wafer direct bonding technique. We have demonstrated epitaxial growth on these substrates and GaInAs/InP multiple quantum well layers were grown by low pressure metal-organic vapor-phase epitaxy. Photoluminescence measurements of the layers show that they are optically active and we have obtained almost the same intensity from these substrates compared to the InP substrate. These results may be attributed to improvement of InP template quality and should provide further improvements in device performance realized on SiO 2 -Si and glass substrate. And, these are promising results in terms of integration of InP-based several functional optical devices on SiO 2 -Si and glass substrate. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

Medical technology advances from space research

Science.gov (United States)

Pool, S. L.

1972-01-01

Details of medical research and development programs, particularly an integrated medical laboratory, as derived from space technology are given. The program covers digital biotelemetry systems, automatic visual field mapping equipment, sponge electrode caps for clinical electroencephalograms, and advanced respiratory analysis equipment. The possibility of using the medical laboratory in ground based remote areas and regional health care facilities, as well as long duration space missions is discussed.

Research progress of free space coherent optical communication

Science.gov (United States)

Tan, Zhenkun; Ke, Xizheng

2018-02-01

This paper mainly introduces the research progress of free space coherent optical communication in Xi'an University of Technology. In recent years, the research on the outer modulation technology of the laser, free-space-to-fiber coupling technique, the design of transmitting and receiving optical antenna, adaptive optical technology with or without wave-front sensor, automatic polarization control technology, frequency stabilization technology, heterodyne detection technology and high speed signal processing technology. Based on the above related research, the digital signal modulation, transmission, detection and data recovery are realized by the heterodyne detection technology in the free space optical communication system, and finally the function of smooth viewing high-definition video is realized.

Research Opportunities in Space Propulsion

Science.gov (United States)

Rodgers, Stephen L.

2007-01-01

Rocket propulsion determines the primary characteristics of any space vehicle; how fast and far it can go, its lifetime, and its capabilities. It is the primary factor in safety and reliability and the biggest cost driver. The extremes of heat and pressure produced by propulsion systems push the limits of materials used for manufacturing. Space travel is very unforgiving with little room for errors, and so many things can go wrong with these very complex systems. So we have to plan for failure and that makes it costly. But what is more exciting than the roar of a rocket blasting into space? By its nature the propulsion world is conservative. The stakes are so high at every launch, in terms of payload value or in human life, that to introduce new components to a working, qualified system is extremely difficult and costly. Every launch counts and no risks are tolerated, which leads to the space world's version of Catch-22:"You can't fly till you flown." The last big 'game changer' in propulsion was the use of liquid hydrogen as a fuel. No new breakthrough, low cost access to space system will be developed without new efficient propulsion systems. Because there is no large commercial market driving investment in propulsion, what propulsion research is done is sponsored by government funding agencies. A further difficulty in propulsion technology development is that there are so few new systems flying. There is little opportunity to evolve propulsion technologies and to update existing systems with results coming out of research as there is in, for example, the auto industry. The biggest hurdle to space exploration is getting off the ground. The launch phase will consume most of the energy required for any foreseeable space exploration mission. The fundamental physical energy requirements of escaping earth's gravity make it difficult. It takes 60,000 kJ to put a kilogram into an escape orbit. The vast majority (-97%) of the energy produced by a launch vehicle is used

Thinking-space as Research Creation

DEFF Research Database (Denmark)

Amhøj, Christa Breum

2016-01-01

to occur here and now. Design/methodology/approach: The object of the chapter is an experiment entitled The Future Public Leadership Education Now. It is based on non-representational studies and designed to operate on the affective registers. Findings: The chapter offers a theoretical and pragmatic...... than criticising existing practices. Building on notions of affective studies, the aim is to experiment on how to shift the focus from thinking about open spaces to intensifying thinking-spaces, able to generate the processual relations increasing the opportunity for a qualitative better welfare...... wandering as wondering. It continues and expands the experiment as an ongoing thinking-spaces moving between the known and the unknown. It aims at gently opening the opportunity for a qualitatively better welfare to occur. Practical implications: Researchers become welfare artists intensifying affective co...

The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

CERN Document Server

Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

1999-01-01

Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties.

Science.gov (United States)

Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

2014-01-01

The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Johansen, Tom Keinicke; Squartecchia, Michele

2017-01-01

An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured whil...... operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2....

LETTER TO THE EDITOR: Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence

Science.gov (United States)

Schvartzman, M.; Sidorov, V.; Ritter, D.; Paz, Y.

2001-10-01

A method for the passivation of indium phosphide, based on thiolated organic self-assembled monolayers (SAMs) that form highly ordered, close-packed structures on the semiconductor surface, is presented. It is shown that the intensity of steady-state photoluminescence (PL) of n-type InP wafers covered with the thiolated SAMs increases significantly (as much as 14-fold) upon their covering with the monolayers. The ease with which one can tailor the outer functional groups of the SAMs provides a way to connect this new class of passivators with standard encapsulators, such as polyimide. Indeed, the PL intensity of SAM-coated InP wafers was not altered upon their overcoating with polyimide, despite the high curing temperature of the polymer (200 °C).

Space Station life science research facility - The vivarium/laboratory

Science.gov (United States)

Hilchey, J. D.; Arno, R. D.

1985-01-01

Research opportunities possible with the Space Station are discussed. The objective of the research program will be study gravity relationships for animal and plant species. The equipment necessary for space experiments including vivarium facilities are described. The cost of the development of research facilities such as the vivarium/laboratory and a bioresearch centrifuge is examined.

ODMR of shallow donors in Zn-doped LEC-grown InP

International Nuclear Information System (INIS)

Trombetta, J.M.; Kennedy, T.A.

1990-01-01

ODMR spectra observed while monitoring the shallow donor-shallow acceptor pair emission in Zn-doped LEC-grown InP display strong features in the region near the conduction electron value of g = 1.20. In addition to a previously observed narrow line, the authors observe a much broader resonance which dominates at low photoexcitation intensity. This broader line is interpreted as the unresolved exchange split resonances of electrons bound to residual shallow donors. The exchange broadening arises from interaction with nearby paramagnetic centers. Both resonances result in a decrease in the shallow-donor-to shallow-acceptor radiative recombination and give evidence for pair recombination processes which compete with this emission

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InP

International Nuclear Information System (INIS)

Sibille, A.; Suski, J.

1985-01-01

This Rapid Communication describes several thermally or electronically stimulated defect reactions involving the dominant deep centers in low-temperature (25--300 K) electron-irradiated InP. Some of these reactions result in an increased concentration of the centers, thereby revealing the existence of a secondary production mechanism of the related defects. Low-energy irradiations allows one to select the type of the ejected atom (P) and gives direct evidence that only a phosphorus species, interstitial or vacancy, is involved in the creation-reaction-annealing events

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Science.gov (United States)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Advancing Translational Space Research Through Biospecimen Sharing: Amplified Impact of Studies Utilizing Analogue Space Platforms

Science.gov (United States)

Staten, B.; Moyer, E.; Vizir, V.; Gompf, H.; Hoban-Higgins, T.; Lewis, L.; Ronca, A.; Fuller, C. A.

2016-01-01

Biospecimen Sharing Programs (BSPs) have been organized by NASA Ames Research Center since the 1960s with the goal of maximizing utilization and scientific return from rare, complex and costly spaceflight experiments. BSPs involve acquiring otherwise unused biological specimens from primary space research experiments for distribution to secondary experiments. Here we describe a collaboration leveraging Ames expertise in biospecimen sharing to magnify the scientific impact of research informing astronaut health funded by the NASA Human Research Program (HRP) Human Health Countermeasures (HHC) Element. The concept expands biospecimen sharing to one-off ground-based studies utilizing analogue space platforms (e.g., Hindlimb Unloading (HLU), Artificial Gravity) for rodent experiments, thereby significantly broadening the range of research opportunities with translational relevance for protecting human health in space and on Earth.

Ex-Situ and In-Situ Ellipsometric Studies of the Thermal Oxide on InP

Science.gov (United States)

1990-12-06

ion---- Distribution/ Availabilit ? Codes£v l llt Codes Avail and/or Dist| Special Abstract The thermally grown InP oxide as etched by an aqueous...aqueous NH4OH/NH4F, and Law(17) has reported observations of orientational ordering of water and organic solvents on pyrex surfaces by in-situ...minutes, followed by a sequence of acetone, deionized water (d. i. water ) rinse. After being dipped in a concentrated aqueous HF solution for 15 seconds

Origin of the main deep electron trap in electron irradiated InP

International Nuclear Information System (INIS)

Sibille, A.

1986-01-01

The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

Models of Learning Space: Integrating Research on Space, Place and Learning in Higher Education

Science.gov (United States)

Ellis, R. A.; Goodyear, P.

2016-01-01

Learning space research is a relatively new field of study that seeks to inform the design, evaluation and management of learning spaces. This paper reviews a dispersed and fragmented literature relevant to understanding connections between university learning spaces and student learning activities. From this review, the paper distils a number of…

Space Research in the Federal Republic of Germany.

Science.gov (United States)

Preuss, Karl-Heinz, Ed.; Simen, Rolf H., Ed.

The Federal Republic of Germany's space policy is designed to promote basic research, contribute to the development of space technology, and apply the findings in the public and private sectors. It is also aimed at enhancing the competitiveness of the West German space industry and helping countries of the Third World to solve their development…

Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

DEFF Research Database (Denmark)

Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

2005-01-01

We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

CERN and ESA examine future fundamental physics research in space

CERN Multimedia

CERN Press Office. Geneva

2000-01-01

A special workshop on Fundamental Physics in Space and related topics will be held at CERN in Geneva from 5 to 7 April 2000. Remarkable advances in technology and progress made in reliability and cost effectiveness of European space missions in recent years have opened up exciting new directions for such research. The workshop provides a forum for sharing expertise gained in high energy physics research with colleagues working in research in space.

Research in space science and technology. Semiannual progress report

International Nuclear Information System (INIS)

Beckley, L.E.

1977-08-01

Progress in various space flight research programs is reported. Emphasis is placed on X-ray astronomy and interplanetary plasma physics. Topics covered include infrared astronomy, long base line interferometry, geological spectroscopy, space life science experiments, atmospheric physics, and space based materials and structures research. Analysis of galactic and extra-galactic X-ray data from the Small Astronomy Satellite (SAS-3) and HEAO-A and interplanetary plasma data for Mariner 10, Explorers 47 and 50, and Solrad is discussed

Space research in the Netherlands 1976

International Nuclear Information System (INIS)

1977-06-01

The reports of the four working groups of the Netherlands Committee for Geophysics and Space Research are given for 1976. The research desribed includes the electromagnetic and particle radiation of the sun and stars, cosmic rays and non-solar X-and gamma-radiation, photometric observations in the far infrared and ultraviolet spectral regions and observational and geometric satellite geodesy. (Auth.)

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

Science.gov (United States)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

Wavelength Conversion of a 9.35-Gb/s RZ OOK Signal in an InP Photonic Crystal Nanocavity

DEFF Research Database (Denmark)

Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

2014-01-01

Wavelength conversion of a 10-Gb/s (9.35 Gb/s net rate) return-to-zero ON-OFF keying signal is demonstrated using a simple InP photonic crystal H0 nanocavity with Lorentzian line shape. The shifting of the resonance induced by the generation of free-carriers enables the pump intensity modulation...

Why do science in space? Researchers' Night at CERN 2017

CERN Multimedia

Nellist, Clara

2017-01-01

Space topic and debate "Why do science in space?" With the special presence of Matthias Maurer, European Space Agency astronaut, and Mercedes Paniccia, PhD, Senior Research Associate for space experiment AMS.

Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (1 0 0) and (3 1 1)B substrates by self-organized anisotropic strain engineering

NARCIS (Netherlands)

Sritirawisarn, N.; Wera, J.L.E.; Otten, van F.W.M.; Nötzel, R.

2010-01-01

The formation of ordered InAs/InP quantum dot (QD) arrays is demonstrated on patterned InP (1 0 0) and (3 1 1)B substrates by the concept of self-organized anisotropic strain engineering in chemical beam epitaxy (CBE). On shallow- and deep stripe-patterned InP (1 0 0) substrates, depending on the

Crystal Growth and Other Materials Physical Researches in Space Environment

Science.gov (United States)

Pan, Mingxiang

Material science researches in space environment are based on reducing the effects of buoyancy driven transport, the effects of atomic oxygen, radiation, extremes of heat and cold and the ultrahigh vacuum, so as to unveil the underlying fundamental phenomena, lead maybe to new potential materials or new industrial processes and develop space techniques. Currently, research program on materials sciences in Chinese Manned Space Engineering (CMSE) is going on. More than ten projects related to crystal growth and materials processes are selected as candidates to be executed in Shenzhou spacecraft, Tiangong Space Laboratory and Chinese Space Station. In this talk, we will present some examples of the projects, which are being prepared and executed in the near future flight tasks. They are both basic and applied research, from discovery to technology.

Stability investigation for InP DHBT mm‐wave power amplifier

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

2013-01-01

microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Hu, P.P. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Liu, J., E-mail: J.Liu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Zhang, S.X. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Maaz, K. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650 Islamabad (Pakistan); Zeng, J. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Guo, H. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Zhai, P.F.; Duan, J.L.; Sun, Y.M.; Hou, M.D. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China)

2016-04-01

InP crystals and GaN films were irradiated by swift heavy ions {sup 86}Kr and {sup 209}Bi with kinetic energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5 × 10{sup 10} to 3.6 × 10{sup 12} ions/cm{sup 2}. The characteristic optical bands were studied by Raman spectroscopy to reveal the disorder and defects induced in the samples during the irradiation process. The crystallinity of InP and GaN was found to be deteriorated after irradiation by the swift heavy ions and resulted in the amorphous nature of the samples along the ion tracks. The amorphous tracks observed by transmission electron microscopy (TEM) images confirmed the formation of lattice defects. In typical F{sub 2}(LO) mode, in case of InP, the spectra shifted towards the lower wavenumbers with a maximum shift of 7.6 cm{sup −1} induced by 1030 MeV Bi ion irradiation. While in case of GaN, the typical E{sub 2}(high) mode shifted towards the higher wavenumbers, with maximum shift of 5.4 cm{sup −1} induced by 760 MeV Bi ion irradiation at ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. The observed Raman shifts reveal the presence of lattice defects and disorder induced in the samples after irradiation by the swift heavy ions. This irradiation also generated lattice stress in the samples, which has been investigated and discussed in detail in this work.

Bulk and interface defects in electron irradiated InP

International Nuclear Information System (INIS)

Peng Chen; Sun Heng-hui

1989-01-01

Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

Integration of the Belarusian Space Research Potential Into International University Nanosatellite Programm

Science.gov (United States)

Saetchnikov, Vladimir; Ablameyko, Sergey; Ponariadov, Vladimir

Belarus has inherited a significant space research potential created back in the Soviet era. It is one of the countries in the world capable of research, engineering and production across a wide range of space technologies, such as remote sensing systems, satellite telecommunication systems and positioning systems etc. Despite these strengths, the participation of Belarusian space organizations in the UN space activity and International research programs is very low. Belarusian State University (BSU) is the leading research and high school education organization of Belarus in several fields of research and development. It was deeply involved into various space research projects, including Soviet Lunar Program, Space Station “Mir”, Space Shuttle “Buran”. From 2004, when the national space programs were restarted, branches of BSU like Institute of Physics and Aerospace Technologies (IPAT), Center for aerospace education, Research laboratory of applied space technologies are leading the research and development works in the field of space communication systems, Earth observation tools and technologies, electronic and optic sensors, etc. The mail fields of activity are: • Hard and software development for small satellites and university satellites in particular. • Development of sensor satellite systems. • Small satellite research experiments (biological and medical in particular). • Earth, airplane and satellite remote monitoring systems including hard and software. • Early warning ecological and industrial Systems. • Geographic information systems of several natural and industrial areas. • Climate change investigation. We have partners from several universities and research institutes from Russian Federation, Ukraine, Kazakhstan and Germany etc. We have a ground station to receive satellite data in RF L and X bands and are very interested to be incorporated into international remote monitoring network. This activity can be combined with

Characterization of an anion antisite defect as a deep double donor in InP

International Nuclear Information System (INIS)

Ando, K.; Katsui, A.; Jeon, D.Y.; Watkins, G.D.; Gislason, H.P.

1989-01-01

A study of optically detected magnetic resonance (ODMR) on the anion antisite defect in electron irradiated InP has been made by monitoring the magnetic circular dichroism (MCD), combined with DLTS experiment. Comparison of the ODMR and DLTS results reveals that the intrinsic anion antisite defect acts as a deep double-donor in the gap. The first ionization (D o /D 1+ ) process occurs both in thermal and optical excitation as a mid-gap electron trap, detected by DLTS and DLOS experiment. (author) 12 refs., 6 figs

Growth of Self-Catalyzed InP Nanowires by Metalorganic Chemical Vapour Deposition

International Nuclear Information System (INIS)

Lv Xiao-Long; Zhang Xia; Yan Xin; Liu Xiao-Long; Cui Jian-Gong; Li Jun-Shuai; Huang Yong-Qing; Ren Xiao-Min

2012-01-01

The fabrication of self-catalyzed InP nanowires (NWs) is investigated under different growth conditions. Indium droplets induced by surface reconstruction act as nucleation sites for NW growth. Vertical standing NWs with uniform cross sections are obtained under optimized conditions. It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible. The results indicate that the droplet acts as an adatom collector rather than a catalyst. Moreover, the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

2012-01-01

A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate (∼600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be ∼1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

Linking African Researchers with Adaptation Policy Spaces | IDRC ...

International Development Research Centre (IDRC) Digital Library (Canada)

Linking African Researchers with Adaptation Policy Spaces. Poor understanding of policy processes tends to reduce the value of research results and the ability of researchers to influence policy. One of the main goals of IDRC's Climate Change Adaptation in Africa (CCAA) program is to build the capacity of researchers to ...

Space Station Centrifuge: A Requirement for Life Science Research

Science.gov (United States)

Smith, Arthur H.; Fuller, Charles A.; Johnson, Catherine C.; Winget, Charles M.

1992-01-01

A centrifuge with the largest diameter that can be accommodated on Space Station Freedom is required to conduct life science research in the microgravity environment of space. (This was one of the findings of a group of life scientists convened at the University of California, Davis, by Ames Research Center.) The centrifuge will be used as a research tool to understand how gravity affects biological processes; to provide an on-orbit one-g control; and to assess the efficacy of using artificial gravity to counteract the deleterious biological effect of space flight. The rationale for the recommendation and examples of using ground-based centrifugation for animal and plant acceleration studies are presented. Included are four appendixes and an extensive bibliography of hypergravity studies.

Omics Research on the International Space Station

Science.gov (United States)

Love, John

2015-01-01

The International Space Station (ISS) is an orbiting laboratory whose goals include advancing science and technology research. Completion of ISS assembly ushered a new era focused on utilization, encompassing multiple disciplines such as Biology and Biotechnology, Physical Sciences, Technology Development and Demonstration, Human Research, Earth and Space Sciences, and Educational Activities. The research complement planned for upcoming ISS Expeditions 45&46 includes several investigations in the new field of omics, which aims to collectively characterize sets of biomolecules (e.g., genomic, epigenomic, transcriptomic, proteomic, and metabolomic products) that translate into organismic structure and function. For example, Multi-Omics is a JAXA investigation that analyzes human microbial metabolic cross-talk in the space ecosystem by evaluating data from immune dysregulation biomarkers, metabolic profiles, and microbiota composition. The NASA OsteoOmics investigation studies gravitational regulation of osteoblast genomics and metabolism. Tissue Regeneration uses pan-omics approaches with cells cultured in bioreactors to characterize factors involved in mammalian bone tissue regeneration in microgravity. Rodent Research-3 includes an experiment that implements pan-omics to evaluate therapeutically significant molecular circuits, markers, and biomaterials associated with microgravity wound healing and tissue regeneration in bone defective rodents. The JAXA Mouse Epigenetics investigation examines molecular alterations in organ specific gene expression patterns and epigenetic modifications, and analyzes murine germ cell development during long term spaceflight. Lastly, Twins Study ("Differential effects of homozygous twin astronauts associated with differences in exposure to spaceflight factors"), NASA's first foray into human omics research, applies integrated analyses to assess biomolecular responses to physical, physiological, and environmental stressors associated

MAGDAS Project for Space Weather Research and Application

International Nuclear Information System (INIS)

Yumoto, Kiyohumi

2009-01-01

The Space Environment Research Center (SERC), Kyushu University, is currently deploying a new ground-based magnetometer network of MAGnetic Data Acqusition System (MAGDAS), in cooperation with about 30 organizations in the world, in order to understand the complex Sun-Earth system for space weather research and application. SERC will conducts MAGDAS observation at 50 stations in the Circum-pan Pacific Magnetometer Network (CPMN) region, and FM-CW radar observation along the 210 deg. magnetic meridian (MM) during the IHY/ILWS/CAWSES periods. This project is actively providing the following space weather monitoring:(1) Global 3-dimensional current system to know electromagnetic coupling of the region 1 and 2 field-aligned currents, auroral electrojet current, Sq current, and equatorial electrojet current. (2) Plasma mass density along the 210 deg. MM to understand plasma environment change during space storms. (3) Ionospheric electric field intensity with 10-sec sampling at L = 1.26 to understand how the external electric field penetrates into the equatorial ionosphere.

Mechanical properties of pure and doped InP single crystals under concentrated loading

International Nuclear Information System (INIS)

Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

1997-01-01

The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

InP tunnel junctions for InP/InGaAs tandem solar cells

Science.gov (United States)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

International Nuclear Information System (INIS)

Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

2015-01-01

Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

Space, geophysical research related to Latin America - Part 2

Science.gov (United States)

Mendoza, Blanca; Shea, M. A.

2016-11-01

For the last 25 years, every two to three years the Conferencia Latinoamericana de Geofísica Espacial (COLAGE) is held in one of the Latin American countries for the purpose of promoting scientific exchange among scientists of the region and to encourage continued research that is unique to this area of the world. At the more recent conference, the community realized that many individuals both within and outside Latin America have contributed greatly to the understanding of the space sciences in this area of the world. It was therefore decided to assemble a Special Issue Space and Geophysical Physics related to Latin America, presenting recent results and where submissions would be accepted from the world wide community of scientists involved in research appropriate to Latin America. Because of the large number of submissions, these papers have been printed in two separate issues. The first issue was published in Advances in Space Research, Vol. 57, number 6 and contained 15 papers. This is the second issue and contains 25 additional papers. These papers show the wide variety of research, both theoretical and applied, that is currently being developed or related to space and geophysical sciences in the Sub-Continent.

Spatial modulation of above-the-gap cathodoluminescence in InP nanowires

International Nuclear Information System (INIS)

Tizei, L H G; Zagonel, L F; Ugarte, D; Cotta, M A; Tencé, M; Stéphan, O; Kociak, M; Chiaramonte, T

2013-01-01

We report the observation of light emission on wurtzite InP nanowires excited by fast electrons. The experiments were performed in a scanning transmission electron microscope using an in-house-built cathodoluminescence detector. Besides the exciton emission, at 850 nm, emission above the band gap from 400 to 800 nm was observed. In particular, this broad emission presented systematic periodic modulations indicating variations in the local excitation probability. The physical origin of the detected emission is not clear. Measurements of the spatial variation of the above-the-gap emission points to the formation of leaky cavity modes of a plasmonic nature along the nanowire length, indicating the wave nature of the excitation. We propose a phenomenological model, which fits closely the observed spatial variations. (paper)

Spatial modulation of above-the-gap cathodoluminescence in InP nanowires

Science.gov (United States)

Tizei, L. H. G.; Zagonel, L. F.; Tencé, M.; Stéphan, O.; Kociak, M.; Chiaramonte, T.; Ugarte, D.; Cotta, M. A.

2013-12-01

We report the observation of light emission on wurtzite InP nanowires excited by fast electrons. The experiments were performed in a scanning transmission electron microscope using an in-house-built cathodoluminescence detector. Besides the exciton emission, at 850 nm, emission above the band gap from 400 to 800 nm was observed. In particular, this broad emission presented systematic periodic modulations indicating variations in the local excitation probability. The physical origin of the detected emission is not clear. Measurements of the spatial variation of the above-the-gap emission points to the formation of leaky cavity modes of a plasmonic nature along the nanowire length, indicating the wave nature of the excitation. We propose a phenomenological model, which fits closely the observed spatial variations.

The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

Science.gov (United States)

Fatemi, Navid S.; Weizer, Victor G.

1993-01-01

We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

International Research Results and Accomplishments From the International Space Station

Science.gov (United States)

Ruttley, Tara M.; Robinson, Julie A.; Tate-Brown, Judy; Perkins, Nekisha; Cohen, Luchino; Marcil, Isabelle; Heppener, Marc; Hatton, Jason; Tasaki, Kazuyuki; Umemura, Sayaka;

Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele

2017-01-01

A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based...... on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations...

Polarization dependence of two-photon absorption coefficient and nonlinear susceptibility tensor in InP

International Nuclear Information System (INIS)

Matsusue, Toshio; Bando, Hiroyuki; Fujita, Shoichi; Takayama, Yusuke

2011-01-01

Two-photon absorption (TPA) effect in (001) InP is investigated using fs laser. Its dependences on wavelength and polarization are clarified by single and double beam methods with linearly polarized lights. Characteristic features are revealed and discussed with scaling law, crystal bonding and mutual relation of polarizations for double beams. The results are successfully analyzed on the basis of the third-order susceptibility tensor for comprehensive understanding of TPA effect at any polarization geometry. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

Science.gov (United States)

Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

2016-04-01

Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

DEFF Research Database (Denmark)

Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

2014-01-01

. In order to extract the QD benefits for the longer telecommunication wavelength range the technology of QD fabrication should be developed for InP based materials. In our work, we take advantage of both QD fabrication methods Stranski-Krastanow (SK) and selective area growth (SAG) employing block copolymer...

Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

Science.gov (United States)

Landesman, Jean-Pierre; Cassidy, Daniel T.; Fouchier, Marc; Pargon, Erwine; Levallois, Christophe; Mokhtari, Merwan; Jimenez, Juan; Torres, Alfredo

2018-02-01

We investigated the crystal lattice deformation that can occur during the etching of structures in bulk InP using SiNx hard masks with Ar/Cl2/CH4 chemistries in an inductively coupled plasma reactor. Two techniques were used: degree of polarization (DOP) of the photo-luminescence, which gives information on the state of mechanical stress present in the structures, and spectrally resolved cathodo-luminescence (CL) mapping. This second technique also provides elements on the mechanical stress in the samples through analysis of the spectral shift of the CL intrinsic emission lines. Preliminary DOP mapping experiments have been conducted on the SiNx hard mask patterns without etching the underlying InP. This preliminary study demonstrated the potential of DOP to map mechanical stress quantitatively in the structures. In a second step, InP patterns with various widths between 1 μm and 20 μm, and various depths between 1 μm and 6 μm, were analyzed by the 2 techniques. DOP measurements were made both on the (100) top surface of the samples and on the (110) cleaved cross section. CL measurements were made only from the (100) surface. We observed that inside the etched features, close to the vertical etched walls, there is always some compressive deformation, while it is tensile just outside the etched features. The magnitude of these effects depends on the lateral and depth dimensions of the etched structures, and on the separation between them (the tensile deformation increases between them due to some kind of proximity effect when separation decreases).

Studies on semiconductors based on InP with sub-ps response times

International Nuclear Information System (INIS)

Biermann, K.

2007-01-01

The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 μm (1.55 μm) were successfully achieved in MQW (coupled QW) structures. (orig.)

The value of integrating policy people and space in research.

Science.gov (United States)

Hecker, Louise; Birla, Ravi K

2009-03-01

In this article, we address several tangible and intangible factors, which are difficult to quantify and often overlooked yet are crucial for research success. We discuss three dimensions which encompass: (1) policy, (2) people, and (3) space. Policies, such as rules and regulations, define the culture of any research program/initiative. Governing rules and regulations defined within these policies are dictated by cultural values. Individuals who exhibit strong leadership, promote innovation, and exercise strategic planning often determine the governing policies. People are the most valuable asset available to any institution. Ensuring the professional growth (personal and scientific) and creating an environment which supports collaborative and collegial research through teamwork are factors that are important for individuals. Space, the physical work environment, is the third dimension of our model and is often an underutilized resource. In addition to the physical layout and design of the space, creating a positive work atmosphere which supports research initiatives is equally important and can create valuable momentum to research efforts. Collectively, these three dimensions (policy, people, and space) have a significant impact on the success of any research initiative. The primary objective of this article is to create awareness and emphasize the importance of implementing these variables within research initiatives in academic settings.

Epigenetics Research on the International Space Station

Science.gov (United States)

Love, John; Cooley, Vic

2016-01-01

The International Space Station (ISS) is a state-of-the orbiting laboratory focused on advancing science and technology research. Experiments being conducted on the ISS include investigations in the emerging field of Epigenetics. Epigenetics refers to stably heritable changes in gene expression or cellular phenotype (the transcriptional potential of a cell) resulting from changes in a chromosome without alterations to the underlying DNA nucleotide sequence (the genetic code), which are caused by external or environmental factors, such as spaceflight microgravity. Molecular mechanisms associated with epigenetic alterations regulating gene expression patterns include covalent chemical modifications of DNA (e.g., methylation) or histone proteins (e.g., acetylation, phorphorylation, or ubiquitination). For example, Epigenetics ("Epigenetics in Spaceflown C. elegans") is a recent JAXA investigation examining whether adaptations to microgravity transmit from one cell generation to another without changing the basic DNA of the organism. Mouse Epigenetics ("Transcriptome Analysis and Germ-Cell Development Analysis of Mice in Space") investigates molecular alterations in organ-specific gene expression patterns and epigenetic modifications, and analyzes murine germ cell development during long term spaceflight, as well as assessing changes in offspring DNA. NASA's first foray into human Omics research, the Twins Study ("Differential effects of homozygous twin astronauts associated with differences in exposure to spaceflight factors"), includes investigations evaluating differential epigenetic effects via comprehensive whole genome analysis, the landscape of DNA and RNA methylation, and biomolecular changes by means of longitudinal integrated multi-omics research. And the inaugural Genes in Space student challenge experiment (Genes in Space-1) is aimed at understanding how epigenetics plays a role in immune system dysregulation by assaying DNA methylation in immune cells

Life into Space: Space Life Sciences Experiments, Ames Research Center, Kennedy Space Center, 1991-1998, Including Profiles of 1996-1998 Experiments

Science.gov (United States)

Souza, Kenneth (Editor); Etheridge, Guy (Editor); Callahan, Paul X. (Editor)

2000-01-01

We have now conducted space life sciences research for more than four decades. The continuing interest in studying the way living systems function in space derives from two main benefits of that research. First, in order for humans to engage in long-term space travel, we must understand and develop measures to counteract the most detrimental effects of space flight on biological systems. Problems in returning to the conditions of Earth must be kept to a manageable level. Second, increasing our understanding of how organisms function in the absence of gravity gives us new understanding of fundamental biological processes. This information can be used to improve human health and the quality of life on Earth.

Planetary Space Weather Services for the Europlanet 2020 Research Infrastructure

Science.gov (United States)

André, Nicolas; Grande, Manuel

2016-04-01

Under Horizon 2020, the Europlanet 2020 Research Infrastructure (EPN2020-RI) will include an entirely new Virtual Access Service, WP5 VA1 "Planetary Space Weather Services" (PSWS) that will extend the concepts of space weather and space situational awareness to other planets in our Solar System and in particular to spacecraft that voyage through it. VA1 will make five entirely new 'toolkits' accessible to the research community and to industrial partners planning for space missions: a general planetary space weather toolkit, as well as three toolkits dedicated to the following key planetary environments: Mars (in support ExoMars), comets (building on the expected success of the ESA Rosetta mission), and outer planets (in preparation for the ESA JUICE mission to be launched in 2022). This will give the European planetary science community new methods, interfaces, functionalities and/or plugins dedicated to planetary space weather in the tools and models available within the partner institutes. It will also create a novel event-diary toolkit aiming at predicting and detecting planetary events like meteor showers and impacts. A variety of tools (in the form of web applications, standalone software, or numerical models in various degrees of implementation) are available for tracing propagation of planetary and/or solar events through the Solar System and modelling the response of the planetary environment (surfaces, atmospheres, ionospheres, and magnetospheres) to those events. But these tools were not originally designed for planetary event prediction and space weather applications. So WP10 JRA4 "Planetary Space Weather Services" (PSWS) will provide the additional research and tailoring required to apply them for these purposes. The overall objectives of this Joint Research Aactivities will be to review, test, improve and adapt methods and tools available within the partner institutes in order to make prototype planetary event and space weather services operational in

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

International Nuclear Information System (INIS)

Li Ou-Peng; Zhang Yong; Xu Rui-Min; Cheng Wei; Wang Yuan; Niu Bing; Lu Hai-Yan

2016-01-01

Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are −2.688 dBm at 210 GHz and −2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. (paper)

The International Space Station Research Opportunities and Accomplishments

Science.gov (United States)

Alleyne, Camille W.

2011-01-01

In 2010, the International Space Station (ISS) construction and assembly was completed to become a world-class scientific research laboratory. We are now in the era of utilization of this unique platform that facilitates ground-breaking research in the microgravity environment. There are opportunities for NASA-funded research; research funded under the auspice of the United States National Laboratory; and research funded by the International Partners - Japan, Europe, Russia and Canada. The ISS facilities offer an opportunity to conduct research in a multitude of disciplines such as biology and biotechnology, physical science, human research, technology demonstration and development; and earth and space science. The ISS is also a unique resource for educational activities that serve to motivate and inspire students to pursue careers in Science, Technology, Engineering and Mathematics. Even though we have just commenced full utilization of the ISS as a science laboratory, early investigations are yielding major results that are leading to such things as vaccine development, improved cancer drug delivery methods and treatment for debilitating diseases, such as Duchenne's Muscular Dystrophy. This paper

Tardigrades in Space Research - Past and Future

Science.gov (United States)

Weronika, Erdmann; Łukasz, Kaczmarek

2017-12-01

To survive exposure to space conditions, organisms should have certain characteristics including a high tolerance for freezing, radiation and desiccation. The organisms with the best chance for survival under such conditions are extremophiles, like some species of Bacteria and Archea, Rotifera, several species of Nematoda, some of the arthropods and Tardigrada (water bears). There is no denying that tardigrades are one of the toughest animals on our planet and are the most unique in the extremophiles group. Tardigrada are very small animals (50 to 2,100 μm in length), and they inhabit great number of Earth environments. Ever since it was proven that tardigrades have high resistance to the different kinds of stress factors associated with cosmic journeys, combined with their relatively complex structure and their relative ease of observation, they have become a perfect model organism for space research. This taxon is now the focus of astrobiologists from around the world. Therefore, this paper presents a short review of the space research performed on tardigrades as well as some considerations for further studies.

Tardigrades in Space Research - Past and Future.

Science.gov (United States)

Weronika, Erdmann; Łukasz, Kaczmarek

2017-12-01

To survive exposure to space conditions, organisms should have certain characteristics including a high tolerance for freezing, radiation and desiccation. The organisms with the best chance for survival under such conditions are extremophiles, like some species of Bacteria and Archea, Rotifera, several species of Nematoda, some of the arthropods and Tardigrada (water bears). There is no denying that tardigrades are one of the toughest animals on our planet and are the most unique in the extremophiles group. Tardigrada are very small animals (50 to 2,100 μm in length), and they inhabit great number of Earth environments. Ever since it was proven that tardigrades have high resistance to the different kinds of stress factors associated with cosmic journeys, combined with their relatively complex structure and their relative ease of observation, they have become a perfect model organism for space research. This taxon is now the focus of astrobiologists from around the world. Therefore, this paper presents a short review of the space research performed on tardigrades as well as some considerations for further studies.

Identification of defects in undoped semi-insulating InP by positron lifetime

International Nuclear Information System (INIS)

Mao Weidong; Wang Shaojie; Wang Zhu

2001-01-01

Positron lifetime measurements, carried out over the temperature range of 10-300 K, have been used to investigate defects in two undoped semi-insulating InP samples. The positron lifetime spectra were analysed by both PATFIT and MELT techniques. The results at room temperature reveal a positron lifetime of around 273 ps, which is associated with indium vacancies V In or V In -hydrogen complexes. The positron average lifetime is temperature dependent and decreases with increasing temperature at the beginning (≤ 80 K and ≤ 120 K), and then remains unchanged, which is attributed to the influence of negative vacancies and detrapping of the positron from those negative ions of Mg, Zn, Ag and Ca with ionization level (1-)

Improved interface properties of atomic-layer-deposited HfO{sub 2} film on InP using interface sulfur passivation with H{sub 2}S pre-deposition annealing

Energy Technology Data Exchange (ETDEWEB)

Jin, Hyun Soo [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin [Inorganic Material Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Sang-Moon [Process Development Team, Semiconductor R& D Center, Samsung Electronics Co. Ltd, Hwasung 445-701 (Korea, Republic of); Park, Jong-Bong; Yun, Dong-Jin [Analytical Engineering Group, Platform Technology Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

2015-12-01

Highlights: • ALD HfO{sub 2} films were grown on InP for III–V compound-semiconductor-based devices. • S passivation was performed with (NH{sub 4}){sub 2}S solution and annealing under a H{sub 2}S atmosphere. • The H{sub 2}S annealing provided similar S profiles at the interface without surface damage. • The H{sub 2}S annealing was more effective to suppress interface state density due to thermal energy. - Abstract: Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H{sub 2}S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO{sub 2} film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH{sub 4}){sub 2}S solution treatment. The H{sub 2}S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH{sub 4}){sub 2}S solution treatment, although S profiles at the interface of HfO{sub 2}/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H{sub 2}S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H{sub 2}S annealing.

Waves and turbulences studies in plasmas: ten years of research on quiescent plasmas at the Brazilian Space Research National Institute

International Nuclear Information System (INIS)

Ferreira, J.L.

1991-01-01

Quiescent plasmas generated by thermionic discharges and surface confined by multipole magnetic fields have been used in basic plasma research since 1973. The first machine was developed at UCLA (USA) to produce an uniform plasma for beam and waves studies in large cross section plasmas. A double quiescent plasma machine was constructed at the plasma laboratory of INPE in 1981, it began its operation producing linear ion-acoustic waves in an Argon plasma. Later on non linear ion acoustic waves and solitons were studied in plasma containing several species of negative and positive ions. The anomalous particle transport across multipole magnetic fields were also investigated. An anomalous resistivity associated with an ion acoustic turbulence is responsible for the formation of a small amplitude double-layer. The existence of a bootstrap mechanism is shown experimentally. Today, the main interest is toward the generation of Langmuir waves in non uniform plasmas. An experimental study on Langmuir wave generation using a grid system is been carried on. A magnetized quiescent plasma device for studies of whistle wave generation is been constructed. This machine will make possible future studies on several wave modes of magnetized plasmas. (author). 31 refs, 16 figs

Space Weather Research in Armenia

Science.gov (United States)

Chilingarian, A. A.

DVIN for ASEC (Data Visualization interactive Network for Aragats Space Environmental Center) is product for accessing and analysis the on-line data from Solar Monitors located at high altitude research station on Mt. Aragats in Armenia. Data from ASEC monitors is used worldwide for scientific purposes and for monitoring of severe solar storms in progress. Alert service, based on the automatic analysis of variations of the different species of cosmic ray particles is available for subscribers. DVIN advantages: DVIN is strategically important as a scientific application to help develop space science and to foster global collaboration in forecasting potential hazards of solar storms. It precisely fits with the goals of the new evolving information society to provide long-term monitoring and collection of high quality scientific data, and enables adequate dialogue between scientists, decision makers, and civil society. The system is highly interactive and exceptional information is easily accessible online. Data can be monitored and analyzed for desired time spans in a fast and reliable manner. The ASEC activity is an example of a balance between the scientific independence of fundamental research and the needs of civil society. DVIN is also an example of how scientific institutions can apply the newest powerful methods of information technologies, such as multivariate data analysis, to their data and also how information technologies can provide convenient and reliable access to this data and to new knowledge for the world-wide scientific community. DVIN provides very wide possibilities for sharing data and sending warnings and alerts to scientists and other entities world-wide, which have fundamental and practical interest in knowing the space weather conditions.

Stronger Collaborations Needed for Successful Space Weather Research

Science.gov (United States)

Akasofu, Syun-Ichi

2007-12-01

One of the purposes of space weather research is to predict when and how the electromagnetic environment around the Earth will be disturbed after specific (solar storms,) which are defined here as various transient solar phenomena that occur at the time of solar flares [Akasofu and Chapman, 1972]. Accurate space weather predictions require an integrating and synthesizing research effort by a close collaboration among solar physicists, interplanetary physicists, magnetospheric physicists, and upper atmosphere physicists. Unfortunately, such integration/synthesis (I/S) projects in the past have often become an umbrella under which individual researchers in the four disciplines pursue only subjects of their own interests, disintegrate into individual projects, and even encourage the trend of infinite specialization because of the potential availability of additional funds.

Physical sciences research plans for the International Space Station

Science.gov (United States)

Trinh, E. H.

2003-01-01

The restructuring of the research capabilities of the International Space Station has forced a reassessment of the Physical Sciences research plans and a re-targeting of the major scientific thrusts. The combination of already selected peer-reviewed flight investigations with the initiation of new research and technology programs will allow the maximization of the ISS scientific and technological potential. Fundamental and applied research will use a combination of ISS-based facilities, ground-based activities, and other experimental platforms to address issues impacting fundamental knowledge, industrial and medical applications on Earth, and the technology required for human space exploration. The current flight investigation research plan shows a large number of principal investigators selected to use the remaining planned research facilities. c2003 American Institute of Aeronautics and Astronautics. Published by Elsevier Science Ltd. All rights reserved.

High-efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide

International Nuclear Information System (INIS)

Jackson, S.L.; Fresina, M.T.; Baker, J.E.; Stillman, G.E.

1994-01-01

Efficient vapor source Si doping of InP and In 0.53 Ga 0.47 As have been demonstrated using SiBr 4 as the Si source for both gas source (GSMBE) and metalorganic molecular beam epitaxy (MOMBE). Net electron concentrations ranging from n=2x10 17 to 6.8x10 19 cm -3 and from 9x10 16 to 3x10 19 cm -3 have been obtained for InP and In 0.53 Ga 0.47 As, respectively. Comparison of these data with those for Si 2 H 6 indicate that the Si incorporation efficiency with SiBr 4 is more than 10 000 times greater than with Si 2 H 6 for substrate temperatures in the range of 475≤T s ≤500 degree C. Specular surface morphologies were obtained, even for the most heavily doped samples. While [Si] as high as 1.8x10 20 cm -3 was obtained in InP, the net electron concentrations and 300 K Hall mobilities decrease with increasing [Si] for [Si]>6.8x10 19 cm -3 . Contact resistances as low as R c =3x10 -8 Ω cm 2 were obtained using a nonalloyed Ti/Pt/Au contact to InP layers doped to n=6.3x10 19 cm -3 . During GSMBE growth, an increased Si background concentration ([Si]∼2x10 17 cm -3 ) was observed after extended use of the SiBr 4 source for these heavy doping concentrations. This increased background was not observed in MOMBE-grown material. Depth profiles of pulse-doped structures indicate the absence of memory effects for structures grown by MOMBE

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

Science.gov (United States)

Ren, Kun; Zheng, Jiachen; Lu, Haiyan; Liu, Jun; Wu, Lishu; Zhou, Wenyong; Cheng, Wei

2018-05-01

This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. Project supported by the National Natural Science Foundation of China (No. 61331006) and the Natural Science Foundation of Zhejiang Province (No. Y14F010017).

A review of algal research in space

Science.gov (United States)

Niederwieser, Tobias; Kociolek, Patrick; Klaus, David

2018-05-01

With the continued expansion of human presence into space, typical mission durations will routinely exceed six months and extend to distances beyond the Moon. As such, sending periodic resupply vehicles, as currently provided to the International Space Station, will likely no longer be feasible. Instead, self-sustaining life support systems that recycle human waste products will become increasingly necessary, especially for planetary bases. The idea of bioregenerative life support systems using algal photobioreactors has been discussed since the beginning of the space age. In order to evaluate how such a system could be implemented, a variety of space flight studies aimed at characterizing the potential for using algae in air revitalization, water recycling, food production, and radiation shielding applications have been conducted over the years. Also, given the recent, growing interest in algal research for regenerative fuel production, food supplements, and cosmetics, many algal strains are already well documented from related terrestrial experiments. This paper reviews past algal experiments flown in space from 1960 until today. Experimental methods and results from 51 investigations utilizing either green algae (Chlorophyta), cyanobacteria (Cyanophyta), or Euglenophyta are analyzed and categorized by a variety of parameters, including size, species and duration. The collected data are summarized in a matrix that allows easy comparison between the experiments and provides important information for future life support system requirement definition and design. Similarities between experiment results are emphasized. Common problems and shortcomings are summarized and analyzed in terms of potential solutions. Finally, key research gaps, which must be closed before developing a functional life support system, are identified.

Studies using wind tunnel to simulate the Atmospheric Boundary Layer at the Alcântara Space Center

Directory of Open Access Journals (Sweden)

Luciana P. Bassi Marinho

2009-01-01

Full Text Available The Alcântara Space Center (ASC region has a peculiar topography due to the existence of a coastal cliff, which modifies the atmospheric boundary layer characteristic in a way that can affect rocket launching operations. Wind tunnel measurements can be an important tool for the understanding of turbulence and wind flow pattern characteristics in the ASC neighborhood, along with computational fluid dynamics and observational data. The purpose of this paper is to describe wind tunnel experiments that have been carried out by researchers from the Brazilian Institutions IAE, ITA and INPE. The technologies of Hot-Wire Anemometer and Particle Image Velocimetry (PIV have been used in these measurements, in order to obtain information about wind flow patterns as velocity fields and vorticity. The wind tunnel measurements are described and the results obtained are presented.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Research Progress and Prospect of GNSS Space Environment Science

Directory of Open Access Journals (Sweden)

YAO Yibin

2017-10-01

Full Text Available Troposphere and ionosphere are two important components of the near-earth space environment. They are close to the surface of the earth and have great influence on human life. The developments of Global Navigation Satellite System (GNSS over the past several decades provide a great opportunity for the GNSS-based space environment science. This review summarizes the research progress and prospect of the GNSS-based research of the Earth's troposphere and ionosphere. On the tropospheric perspective, modeling of the key tropospheric parameters and inversion of precipitable water vapor (PWV are dominant researching fields. On the ionospheric perspective, 2D/3D ionospheric models and regional/global ionospheric monitoring are dominant researching fields.

Workshop on Research for Space Exploration: Physical Sciences and Process Technology

Science.gov (United States)

Singh, Bhim S.

1998-01-01

This report summarizes the results of a workshop sponsored by the Microgravity Research Division of NASA to define contributions the microgravity research community can provide to advance the human exploration of space. Invited speakers and attendees participated in an exchange of ideas to identify issues of interest in physical sciences and process technologies. This workshop was part of a continuing effort to broaden the contribution of the microgravity research community toward achieving the goals of the space agency in human exploration, as identified in the NASA Human Exploration and Development of Space (HEDS) strategic plan. The Microgravity program is one of NASA'a major links to academic and industrial basic research in the physical and engineering sciences. At present, it supports close to 400 principal investigators, who represent many of the nation's leading researchers in the physical and engineering sciences and biotechnology. The intent of the workshop provided a dialogue between NASA and this large, influential research community, mission planners and industry technical experts with the goal of defining enabling research for the Human Exploration and Development of Space activities to which the microgravity research community can contribute.

Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

Science.gov (United States)

Ringel, S. A.; Chatterjee, B.

2004-01-01

Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

NSF's Perspective on Space Weather Research for Building Forecasting Capabilities

Science.gov (United States)

Bisi, M. M.; Pulkkinen, A. A.; Bisi, M. M.; Pulkkinen, A. A.; Webb, D. F.; Oughton, E. J.; Azeem, S. I.

2017-12-01

Space weather research at the National Science Foundation (NSF) is focused on scientific discovery and on deepening knowledge of the Sun-Geospace system. The process of maturation of knowledge base is a requirement for the development of improved space weather forecast models and for the accurate assessment of potential mitigation strategies. Progress in space weather forecasting requires advancing in-depth understanding of the underlying physical processes, developing better instrumentation and measurement techniques, and capturing the advancements in understanding in large-scale physics based models that span the entire chain of events from the Sun to the Earth. This presentation will provide an overview of current and planned programs pertaining to space weather research at NSF and discuss the recommendations of the Geospace Section portfolio review panel within the context of space weather forecasting capabilities.

Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential

Energy Technology Data Exchange (ETDEWEB)

Carrete, J; Longo, R C; Gallego, L J, E-mail: jesus.carrete@usc.es [Departamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela (Spain)

2011-05-06

A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity {lambda} of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of {lambda} about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

Setting priorities for space research: An experiment in methodology

Science.gov (United States)

1995-01-01

In 1989, the Space Studies Board created the Task Group on Priorities in Space Research to determine whether scientists should take a role in recommending priorities for long-term space research initiatives and, if so, to analyze the priority-setting problem in this context and develop a method by which such priorities could be established. After answering the first question in the affirmative in a previous report, the task group set out to accomplish the second task. The basic assumption in developing a priority-setting process is that a reasoned and structured approach for ordering competing initiatives will yield better results than other ways of proceeding. The task group proceeded from the principle that the central criterion for evaluating a research initiative must be its scientific merit -- the value of the initiative to the proposing discipline and to science generally. The group developed a two-stage methodology for priority setting and constructed a procedure and format to support the methodology. The first of two instruments developed was a standard format for structuring proposals for space research initiatives. The second instrument was a formal, semiquantitative appraisal procedure for evaluating competing proposals. This report makes available complete templates for the methodology, including the advocacy statement and evaluation forms, as well as an 11-step schema for a priority-setting process. From the beginning of its work, the task group was mindful that the issue of priority setting increasingly pervades all of federally supported science and that its work would have implications extending beyond space research. Thus, although the present report makes no recommendations for action by NASA or other government agencies, it provides the results of the task group's work for the use of others who may study priority-setting procedures or take up the challenge of implementing them in the future.

New solar irradiances for use in space research

Science.gov (United States)

Tobiska, W.; Bouwer, D.; Jones, A.

Space environment research applications require solar irradiances in a variety of time scales and spectral formats We describe the development of research grade modeled solar irradiances using four models and systems that are also used for space weather operations The four models systems include SOLAR2000 S2K SOLARFLARE SFLR APEX and IDAR which are used by Space Environment Technologies SET to provide solar irradiances from the soft X-rays through the visible spectrum SFLR uses the GOES 0 1--0 8 nm X-rays in combination with a Mewe model subroutine to provide 0 1--30 0 nm irradiances at 0 1 nm spectral resolution at 1 minute time resolution and in a 6-hour XUV--EUV spectral solar flare evolution forecast with a 7 minute latency and a 2 minute cadence These irradiances have been calibrated with the SORCE XPS observations and we report on the inclusion of these irradiances in the S2K model There are additional developments with S2K that we discuss particularly the method by which S2K is emerging as a hybrid model empirical plus physics-based and real-time data integration platform Numerous new solar indices have been recently developed for the operations community and we describe their inclusion in S2K The APEX system is a real-time data retrieval system developed under contract to the University of Southern California Space Sciences Center SSC to provide SOHO SEM data processing and distribution SSC provides the updated SEM data to the research community and SET provides the operational data to the space operations community We

The Critical Role of the Research Community in Space Weather Planning and Execution

Science.gov (United States)

Robinson, Robert M.; Behnke, Richard A.; Moretto, Therese

2018-03-01

The explosion of interest in space weather in the last 25 years has been due to a confluence of efforts all over the globe, motivated by the recognition that events on the Sun and the consequent conditions in interplanetary space and Earth's magnetosphere, ionosphere, and thermosphere can have serious impacts on vital technological systems. The fundamental research conducted at universities, government laboratories, and in the private sector has led to tremendous improvements in the ability to forecast space weather events and predict their impacts on human technology and health. The mobilization of the research community that made this progress possible was the result of a series of actions taken by the National Science Foundation (NSF) to build a national program aimed at space weather. The path forward for space weather is to build on those successes through continued involvement of the research community and support for programs aimed at strengthening basic research and education in academia, the private sector, and government laboratories. Investments in space weather are most effective when applied at the intersection of research and applications. Thus, to achieve the goals set forth originally by the National Space Weather Program, the research community must be fully engaged in the planning, implementation, and execution of space weather activities, currently being coordinated by the Space Weather Operations, Research, and Mitigation Subcommittee under the National Science and Technology Council.

Morphological evolution of InP nano-dots and surface modifications after keV irradiation

International Nuclear Information System (INIS)

Paramanik, Dipak; Sahu, S N; Varma, Shikha

2008-01-01

Evolution and coarsening behaviour of self-assembled nano-dots fabricated on an InP surface by 3 keV Ar ion sputtering have been studied in conjunction with the structural modifications at the surface. The dots have been produced in off-normal geometry but in the absence of rotation. For small sputtering durations, the dots coarsen and agglomerate, up to a critical time t c , while the surface roughens and experiences a tensile stress. A relaxation in this stress is observed after the surface becomes amorphized at t c , beyond which an inverse coarsening, fragmentation of dots and a smoothened surface are observed

Reflexivity: The Creation of Liminal Spaces--Researchers, Participants, and Research Encounters.

Science.gov (United States)

Enosh, Guy; Ben-Ari, Adital

2016-03-01

Reflexivity is defined as the constant movement between being in the phenomenon and stepping outside of it. In this article, we specify three foci of reflexivity--the researcher, the participant, and the encounter--for exploring the interview process as a dialogic liminal space of mutual reflection between researcher and participant. Whereas researchers' reflexivity has been discussed extensively in the professional discourse, participants' reflexivity has not received adequate scholarly attention, nor has the promise inherent in reflective processes occurring within the encounter. © The Author(s) 2015.

Physics Research on the International Space Station

CERN Multimedia

CERN. Geneva

2012-01-01

The International Space Station (ISS) is orbiting Earth at an altitude of around 400 km. It has been manned since November 2000 and currently has a permanent crew of six. On-board ISS science is done in a wide field of sciences, from fundamental physics to biology and human physiology. Many of the experiments utilize the unique conditions of weightlessness, but also the views of space and the Earth are exploited. ESA’s (European Space Agency) ELIPS (European Programme Life and Physical sciences in Space) manages some 150 on-going and planned experiments for ISS, which is expected to be utilized at least to 2020. This presentation will give a short introduction to ISS, followed by an overview of the science field within ELIPS and some resent results. The emphasis, however, will be on ISS experiments which are close to the research performed at CERN. Silicon strip detectors like ALTEA are measuring the flux of ions inside the station. ACES (Atomic Clock Ensemble in Space) will provide unprecedented global ti...

Growth of thermal oxide layers on GaAs and InP in the presence of ammonium heptamolybdate

International Nuclear Information System (INIS)

Mittova, I.Ya.; Lavrushina, S.S.; Afonchikova, A.V.

2004-01-01

Processes of thermal oxidation of GaAs and InP in the presence of ammonium heptamolybdate were studied using the methods of X-ray fluorescence analysis and IR spectroscopy at temperatures 480-580 Deg C. It was ascertained that introduction of the activator into the system results in accelerated growth of layers on semiconductors due to participation of anionic component of the chemostimulator in oxidation processes. The activator is integrated into the salts formed [ru

Research progress on the space-flight mutation breeding of woodyplant

International Nuclear Information System (INIS)

Cui Binbin; Sun Yuhan; Li Yun

2013-01-01

The space-flight mutation breeding conception, characteristics, mutagenic effects, research progress at home and abroad in woody plant were reviewed in this paper. Compared with crops, although the research of the woody plants space-flight mutation breeding in China started later, but it has developed rapidly and has gotten certain achievement. Now the satellite and high-altitude balloon experiment were conducted with over 20 tree species such as Populus ussuriensis and 50 flower species such as Paeonia suffruticosa. The above work will has profound significance for space-flight breeding technology application on woody plants. In the end, this thesis analyzes the prospect in the future from four aspects such as using woody plants asexual reproduction characteristic, strengthening the space mutation mechanism study, enhancing new space mutation varieties screen and strengthening ornamental specific types selection. This thesis also thinks that the space mutation breeding is expected to become an effective way in woody plant genetic breeding. (authors)

Researching transformative learning spaces through learners' stories

DEFF Research Database (Denmark)

Maslo, Elina

spaces, learning to learn through languages, learners´ stories, qualitative research method Methodology or Methods/Research Instruments or Sources Used A number of semi structured qualitative interviews have been conducted with three learners of Danish as second language. The language learners...... in the paper is on the research process and methodological tools. The goal of this paper is to show, that learners´ stories have a huge potential in researching learning processes. References Benson, P. & D. Nunan (2004). Lerners´ stories. Difference and Diversity in Language Learning. Cambridge University...... to use learners´ stories as a research methodology in the field of learning in general and language learning in particular....

Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

Science.gov (United States)

Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

1990-01-01

The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

International Space Station Research for the Next Decade: International Coordination and Research Accomplishments

Science.gov (United States)

Thumm, Tracy L.; Robinson, Julie A.; Johnson-Green, Perry; Buckley, Nicole; Karabadzhak, George; Nakamura, Tai; Sorokin, Igor V.; Zell, Martin; Sabbagh, Jean

2011-01-01

During 2011, the International Space Station reached an important milestone in the completion of assembly and the shift to the focus on a full and continuous utilization mission in space. The ISS partnership itself has also met a milestone in the coordination and cooperation of utilization activities including research, technology development and education. We plan and track all ISS utilization activities jointly and have structures in place to cooperate on common goals by sharing ISS assets and resources, and extend the impacts and efficiency of utilization activities. The basic utilization areas on the ISS include research, technology development and testing, and education/outreach. Research can be categorized as applied research for future exploration, basic research taking advantage of the microgravity and open space environment, and Industrial R&D / commercial research focused at industrial product development and improvement. Technology development activities range from testing of new spacecraft systems and materials to the use of ISS as an analogue for future exploration missions to destinations beyond Earth orbit. This presentation, made jointly by all ISS international partners, will highlight the ways that international cooperation in all of these areas is achieved, and the overall accomplishments that have come as well as future perspectives from the cooperation. Recently, the partnership has made special efforts to increase the coordination and impact of ISS utilization that has humanitarian benefits. In this context the paper will highlight tentative ISS utilization developments in the areas of Earth remote sensing, medical technology transfer, and education/outreach.

Institute of Nuclear Physics, mission and scientific research activities

International Nuclear Information System (INIS)

Zoto, J.; Zaganjori, S.

2004-01-01

The Institute of Nuclear Physics (INP) was established in 1971 as a scientific research institution with main goal basic scientific knowledge transmission and transfer the new methods and technologies of nuclear physics to the different economy fields. The organizational structure and main research areas of the Institute are described. The effects of the long transition period of the Albanian society and economy on the Institution activity are also presented

A unified calculation of the optical spectral band positions and electron paramagnetic resonance spectral data for Yb3+ in InP semiconductor

International Nuclear Information System (INIS)

Feng Wenlin; Zheng Wenchen; Liu Honggang; Li, X.M.

2011-01-01

Highlights: → We found a energy matrix of 4f 13 ion in cubic crystals and external magnetic field. → Optical and EPR data of Yb 3+ : InP are explained by diagonalizing the energy matrix. → Signs of hyperfine structure constants A( 171 Yb 3+ ) and A( 173 Yb 3+ ) are determined. - Abstract: The complete energy matrix for a 4f 13 ion in cubic crystals and under an external magnetic field is established by means of the irreducible tensor operator and/or equivalent operator methods. By diagonalizing the energy matrix, four optical spectrum band positions and three spin-Hamiltonian parameters [g factor and hyperfine structure constants A( 171 Yb 3+ ) and A( 173 Yb 3+ )] for Yb 3+ in InP semiconductor are calculated together. The calculated results are in good agreement with the experimental values. The signs of hyperfine structure constants A( 171 Yb 3+ ) and A( 173 Yb 3+ ) are determined from the calculations. The results are discussed.

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn