WorldWideScience

Sample records for source-coupled n-channel jfet-based

  1. N Channel JFET Based Digital Logic Gate Structure

    Science.gov (United States)

    Krasowski, Michael J (Inventor)

    2013-01-01

    An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.

  2. Photosensitive N channel MOSFET device on silicon on sapphire substrate

    International Nuclear Information System (INIS)

    Le Goascoz, V.; Borel, J.

    1975-01-01

    An anomalous behavior of the N channel output current characteristic in a SOS MOSFET with a floating bulk is described. Such a phenomenon can be used in a photosensitive device with internal gain. Such devices can be used on SOS substrates to achieve integrated circuits with high insulating voltages and data transmission by optical means [fr

  3. n-Channel semiconductor materials design for organic complementary circuits.

    Science.gov (United States)

    Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

    2011-07-19

    Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an

  4. Processes in N-channel MOSFETs during postirradiation thermal annealing

    International Nuclear Information System (INIS)

    Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

    1997-01-01

    The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

  5. Climate Change and Closure of Thyborøn Channel

    DEFF Research Database (Denmark)

    Larsen, Torben

    The matter of Thyborøn Channel is the culmination of the coastal engineering in Denmark. Many hundreds of man-years have been spent by engineers and scientists on the planning and evaluation of the complex of problems briefly outlined in the following. After having been separated for more than 70...... of the consequences of the global warming and the rising sea level........ In general, the public conceives the channel as a preservation-worthy piece of nature but the inconvenient truth is that the channel exists only because of human intervention in the nature. At suggestion of Jørgen Bülow Beck and the author the matter was reopened in 2005 because of the discussion...

  6. Characterizing effects of radiation on forward and reverse saturation characteristics of N-channel devices

    International Nuclear Information System (INIS)

    Jaafar Ali, M.N.; Bhuva, B.; Kerns, S.; Maher, M.; Lawrence, R.

    1999-01-01

    The forward and reverse characteristics of an N-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity at low total dose exposures is caused by bulk oxide trap. At higher doses, non-uniformity are dominated by interface traps. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies. (authors)

  7. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    Science.gov (United States)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  8. 78 FR 29386 - Government-Owned Inventions, Available for Licensing

    Science.gov (United States)

    2013-05-20

    ... NATIONAL AERONAUTICS AND SPACE ADMINISTRATION [Notice (13-053)] Government-Owned Inventions, Available for Licensing AGENCY: National Aeronautics and Space Administration. ACTION: Notice of... N Channel JFET Based Digital Logic Gate Structure Using Resistive Level Shifters and Having Direct...

  9. AlGaN Channel Transistors for Power Management and Distribution

    Science.gov (United States)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  10. Cyanated diazatetracene diimides with ultrahigh electron affinity for n-channel field effect transistors

    KAUST Repository

    Ye, Qun

    2013-03-15

    Several diazatetracene diimides with high electron affinity (up to 4.66 eV!) were prepared and well characterized. The LUMO energy level of these electron-deficient molecules was found to be closely related to their material stability. Compound 7 with ultrahigh electron affinity suffered from reduction and hydrolysis in the presence of silica gel or water. The stable compounds 3 and 6 showed n-channel FET behavior with an average electron mobility of 0.002 and 0.005 cm2 V-1 s-1, respectively, using a solution processing method. © 2013 American Chemical Society.

  11. Bisacenaphthopyrazinoquinoxaline derivatives: Synthesis, physical properties and applications as semiconductors for n-channel field effect transistors

    KAUST Repository

    Tong, Chenhua

    2013-01-01

    Several bisacenaphthopyrazinoquinoxaline (BAPQ) based derivatives 1-3 were synthesized by condensation between the acenaphthenequinones and 1,2,4,5-tetraaminobenzene tetrahydrochloride. Their optical, electrochemical and self-assembling properties are tuned by different substituents. Among them, compound 3 possesses a homogeneously distributed low-lying LUMO due to the peripheral substitution with four cyano groups. The corresponding n-channel field effect transistors showed a field effect electron mobility of 5 × 10-3 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

  12. Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

    Science.gov (United States)

    Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

    1991-10-01

    The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

  13. Simulating single-event burnout of n-channel power MOSFET's

    International Nuclear Information System (INIS)

    Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.

    1993-01-01

    Heavy ions are ubiquitous in a space environment. Single-event burnout of power MOSFET's is a sudden catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device structure. The passage of the heavy ion generates a current filament that locally turns on a parasitic n-p-n transistor inherent to the power MOSFET. Subsequent high currents and high voltage in the device induce second breakdown of the parasitic bipolar transistor and hence meltdown of the device. This paper presents a model that can be used for simulating the burnout mechanism in order to gain insight into the significant device parameters that most influence the single-event burnout susceptibility of n-channel power MOSFET's

  14. A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors

    International Nuclear Information System (INIS)

    Jung, T.S.; Guckel, H.; Seefeldt, J.; Ott, G.; Ahn, Y.C.

    1994-01-01

    In this paper, an integrated charge preamplifier to be used with small (10--30 mm 2 ) Si(Li) and Ge(Li) X-ray detectors is described. The preamplifier is designed to operate at cryogenic temperatures (∼100 K to 160 K) for the best performance. An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistors at the same current. Results for integrated amplifier are discussed

  15. Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactor

    Science.gov (United States)

    Elogail, Y.; Kasper, E.; Gunzer, F.; Shaker, A.; Schulze, J.

    2016-06-01

    This work is concerned with the investigation of Capacitance-Voltage (CV) behavior of n-channel Si/SiGe MODFET varactors. This investigation provides a valuable insight into the high frequency response of the device under test and its dependence on design parameters; especially regarding the modulation layer doping concentration. The heterostructure under consideration is much more complicated than conventional MOS varactor with respect to non-uniform doping, energy band offsets and the pn-junction in series. Subsequently, CV characterization has never been applied to such MODFET varactor structure. Experimental CV measurements have shown a non-monotonic behavior with a transition point minimum and higher saturation levels on both sides, in contradiction to the conventional high frequency MOS characteristics. This behavior was confirmed qualitatively using simulations. Moreover, we explain some fundamental capacitance properties of the structure, which provide already very interesting perceptions of the MODFET varactor operation, modeling and possible applications using the obtained stimulating results.

  16. Orientation-Dependent Electronic Structures and Charge Transport Mechanisms in Ultrathin Polymeric n-Channel Field-Effect Transistors

    NARCIS (Netherlands)

    Fabiano, Simone; Yoshida, Hiroyuki; Chen, Zhihua; Facchetti, Antonio; Loi, Maria Antonietta

    2013-01-01

    We investigated the role of metal/organic semiconductor interface morphology on the charge transport mechanisms and energy level alignment of the n-channel semiconductor poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P-(NDI2ODT2)).

  17. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    International Nuclear Information System (INIS)

    Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

    2013-01-01

    We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

  18. Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

    Science.gov (United States)

    Gonçalves Filho, Luiz C.; Monte, David S.; Barros, Fabio R.; Santos, Luiz A. P.

    2018-01-01

    MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.

  19. A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications

    International Nuclear Information System (INIS)

    Du, Lili; Luo, Xiao; Wen, Zhanwei; Zhang, Jianping; Sun, Lei; Lv, Wenli; Li, Yao; Zhao, Feiyu; Zhong, Junkang; Ren, Qiang; Huang, Fobao; Xia, Hongquan; Peng, Yingquan

    2015-01-01

    For fullerene based n-channel transistors, remarkably improved device characteristics were achieved via charge injection and transport interfacial synergistic modifications using low-cost aluminium source/drain electrodes. Compared with the reference device without any modifications (device A), the as-fabricated transistor (device H) showed a dramatic improvement of saturation mobility from 0.0026 to 0.3078 cm 2 V −1 s −1 with a maximum on–off current ratio of 10 6 and a minimum subthreshold slope of 1.52 V decade −1 . AFM and XRD analysis manifested that the deposited C 60 films on PVA/OTS successive-modified SiO 2 substrate were highly dense polycrystalline and uniform with larger crystalline grain and less grain boundary. A gap state assisted electron injection mechanism was proposed to explicate the enhanced electrical conductivity considering BCP modification for charge injection interface, which has been well corroborated by a diode-based injection experiment and a theoretical calculation of contact resistances. We further demonstrated the application of the concept modification method to enable comparative time-stable operation of fullerene n-channel transistors. Given many key merits, we believed that this general method using multi-interface modifications could be extended to fabricate other n-channel OFETs with superior electrical performance and stability. (paper)

  20. SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Almad

    2009-01-01

    high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

  1. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Olsen, Sarah H.

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

  2. Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

    Science.gov (United States)

    Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao-Chih; Ma, Zhenqiang; Váró, György

    2007-03-01

    A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

  3. Two-dimensional numerical simulation of the effect of single event burnout for n-channel VDMOSFET

    International Nuclear Information System (INIS)

    Guo Hongxia; Chen Yusheng; Wang Wei; Zhao Jinlong; Zhang Yimen; Zhou Hui

    2004-01-01

    2D MEDICI simulator is used to investigate the effect of Single Event Burnout (SEB) for n-channel power VDMOSFETs. The simulation results are consistent with experimental results which have been published. The simulation results are of great interest for a better understanding of the occurrence of events. The effects of the minority carrier lifetime in the base region, the base width and the emitter doping density on SEB susceptibility are verified. Some hardening solutions to SEB are provided. The work shows that the 2D simulator MEDICI is an useful tool for burnout prediction and for the evaluation of hardening solutions. (authors)

  4. On beam shaping of the field radiated by a line source coupled to finite or infinite photonic crystals.

    Science.gov (United States)

    Ceccuzzi, Silvio; Jandieri, Vakhtang; Baccarelli, Paolo; Ponti, Cristina; Schettini, Giuseppe

    2016-04-01

    Comparison of the beam-shaping effect of a field radiated by a line source, when an ideal infinite structure constituted by two photonic crystals and an actual finite one are considered, has been carried out by means of two different methods. The lattice sums technique combined with the generalized reflection matrix method is used to rigorously investigate the radiation from the infinite photonic crystals, whereas radiation from crystals composed of a finite number of rods along the layers is analyzed using the cylindrical-wave approach. A directive radiation is observed with the line source embedded in the structure. With an increased separation distance between the crystals, a significant edge diffraction appears that provides the main radiation mechanism in the finite layout. Suitable absorbers are implemented to reduce the above-mentioned diffraction and the reflections at the boundaries, thus obtaining good agreement between radiation patterns of a localized line source coupled to finite and infinite photonic crystals, when the number of periods of the finite structure is properly chosen.

  5. Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

    Science.gov (United States)

    Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

    2018-06-01

    In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

  6. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-09

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

  7. Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

    2015-10-15

    Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

  8. Discharge source coupled to a deceleration unit for anion beam generation: Application to H{sub 2}{sup −} photodetachment

    Energy Technology Data Exchange (ETDEWEB)

    Rudnev, V.; Ureña, A. González [Unidad de Láseres y Haces Moleculares, Instituto Pluridisciplinar, Universidad Complutense, Juan XXIII-1, Madrid 28040 (Spain)

    2013-12-15

    A cathode discharge source coupled to a deceleration unit for anion beam generation is described. The discharge source, made of stainless steel or duralumin electrodes and Macor insulators, is attached to the exit nozzle valve plate at one end, and to an Einzel lens to the other end. Subsequently, a cylindrical retardation unit is attached to the Einzel lens to decelerate the ions in order to optimize the laser beam interaction time required for spectroscopic investigations. The compact device is able to produce beam intensities of the order of 2 × 10{sup 12} anions/cm{sup 2} s and 20 μrad of angular divergence with kinetic energies ranging from 30 to 120 eV. Using distinct gas mixtures for the supersonic expansion together with a linear time-of-flight spectrometer, anions of great relevance in molecular astrophysics like, for example, H{sub 2}{sup −}, C{sub 3}H{sup −}, C{sub 2}{sup −}, C{sub 2}H{sup −}, HCN{sub 2}{sup −}, CO{sub 2}{sup −}, CO{sub 2}H{sup −}, C{sub 4}{sup −}, C{sub 4}H{sup −}, C{sub 5}H{sub 4}{sup −}, C{sub 5}H{sub 6}{sup −}, C{sub 7}N{sup −}, and C{sub 10}N{sup −} were produced. Finally, in order to demonstrate the capability of the experimental technique the photodetachment cross-section of the metastable H{sub 2}{sup −}, predominantly in the (v = 0, J = 26) state, was measured following laser excitation at λ{sub exc}= 565 nm obtaining a value of σ{sub ph}= 0.04 Å. To the best of our knowledge, it is the first time that this anion cross-section has been measured.

  9. An accurate mobility model for the I-V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation

    International Nuclear Information System (INIS)

    Chingyuan Wu; Yeongwen Daih

    1985-01-01

    In this paper an analytical mobility model is developed for the I-V characteristics of n-channel enhancement-mode MOSFETs, in which the effects of the two-dimensional electric fields in the surface inversion channel and the parasitic resistances due to contact and interconnection are included. Most importantly, the developed mobility model easily takes the device structure and process into consideration. In order to demonstrate the capabilities of the developed model, the structure- and process-oriented parameters in the present mobility model are calculated explicitly for an n-channel enhancement-mode MOSFET with single-channel boron implantation. Moreover, n-channel MOSFETs with different channel lengths fabricated in a production line by using a set of test keys have been characterized and the measured mobilities have been compared to the model. Excellent agreement has been obtained for all ranges of the fabricated channel lengths, which strongly support the accuracy of the model. (author)

  10. The First JFET-based Silicon Carbide Active Pixel Sensor UV Imager, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc....

  11. The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a...

  12. Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

    Energy Technology Data Exchange (ETDEWEB)

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Hussain, Muhammad M., E-mail: MuhammadMustafa.Hussain@kaust.edu.sa [Integrated Nanotechnology Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia); Aljedaani, Abdulrahman B. [High-Speed Fluids Imaging Laboratory, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)

    2015-10-26

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  13. Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

    International Nuclear Information System (INIS)

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Hussain, Muhammad M.; Aljedaani, Abdulrahman B.

    2015-01-01

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties

  14. Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

    KAUST Repository

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Aljedaani, Abdulrahman B.; Hussain, Muhammad Mustafa

    2015-01-01

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  15. Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

    Science.gov (United States)

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

    2015-10-01

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  16. Mass separation of rare-earth elements by a high-temperature thermal ion source coupled with a He-jet system

    International Nuclear Information System (INIS)

    Kawase, Y.; Okano, K.; Aoki, K.

    1987-01-01

    By using a high-temperature thermal ion source coupled to a He-jet system, neutron-rich isotopes of rare-earth elements such as cerium, praseodymium, neodymium and promethium produced by the thermal-neutron fission of /sup 235/U were ionized and successfully separated. The temperature dependence of the ionization efficiency has been measured and found to be explained qualitatively by the vapour pressure of the relevant elements. The characteristic temperature dependence of the ionization efficiency has been utilized for Z-identification of several isobars of rare-earth elements. The heaviest isotopes of neodymium and promethium, /sup 155/Nd and /sup 156/Pm, have recently been identified

  17. N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

    International Nuclear Information System (INIS)

    Tanida, Shinji; Noda, Kei; Kawabata, Hiroshi; Matsushige, Kazumi

    2009-01-01

    N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO 2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO 2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO 2 surface.

  18. Analysis of the effect of interface state charges on threshold voltage and transconductance of 6H-SiC N-channel MOSFET

    International Nuclear Information System (INIS)

    Tang Xiaoyan; Zhang Yimen; Zhang Yuming

    2002-01-01

    The effect of interface state charges on the threshold voltage and transconductance of 6H-SiC N-channel metal-oxide semiconductor field-effect transistor (MOSFET) is analyzed based on the non-uniformly distributed interface state density in the band gap and incomplete impurity ionization in silicon carbide. The results show that the nonuniform distribution of interface state density cause not only the increment of the threshold voltage but also the degradation of the transconductance of MOSFET so that it is one of the important factors to influence the characteristics of SiC MOSFET

  19. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  20. A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Park, Mun-Soo; Na, Inmook; Wie, Chu R.

    2005-01-01

    n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement

  1. Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

    Science.gov (United States)

    Wang, Hongjuan; Han, Genquan; Jiang, Xiangwei; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2017-04-01

    In this work, the boosting effect on the performance of GeSn n-channel fin tunneling FET (nFinTFET) enabled by uniaxial tensile stress is investigated theoretically. As the fin rotates within the (001) plane, the uniaxial tensile stress is always along its direction. The electrical characteristics of tensile-stressed GeSn nFinTFETs with point and line tunneling modes are computed utilizing the technology computer aided design (TCAD) simulator in which the dynamic nonlocal band-to-band tunneling (BTBT) algorithm is employed. In comparison with the relaxed devices, tensile-stressed GeSn nFinTFETs achieve a substantial enhancement in band-to-band tunneling generation rate (G BTBT) and on-state current I ON owing to the reduced bandgap E G induced by the tensile stress. Performance improvement of GeSn nFinTFETs induced by tensile stress demonstrates a strong dependence on channel direction and tunneling modes. Under the same magnitude of stress, line-nFinTFETs obtain a more pronounced I ON enhancement over the transistors with point tunneling mode.

  2. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

    1999-07-02

    n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

  3. A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Anjum, Arshiya; Vinayakprasanna, N.H.; Pradeep, T.M. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore 570025 (India); Krishna, J.B.M. [IUC-DAE CSR, Kolkota 700098 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2016-07-15

    N-channel depletion MOSFETs were irradiated with 4 MeV Proton and Co-60 gamma radiation in the dose range of 100 krad(Si) to 100 Mrad(Si). The electrical characteristics of MOSFET such as threshold voltage (V{sub th}), density of interface trapped charges (ΔN{sub it}), density of oxide trapped charges (ΔN{sub ot}), transconductance (g{sub m}), mobility (μ), leakage current (I{sub L}) and drain saturation current (I{sub D} {sub Sat}) were studied as a function of dose. A considerable increase in ΔN{sub it} and ΔN{sub ot} and decrease in V{sub th,}g{sub m}, μ, and I{sub D} {sub Sat} was observed after irradiation. The results of 4 MeV Proton irradiation were compared with that of Co-60 gamma radiation and it is found that the degradation is more for the devices irradiated with 4 MeV Protons when compared with the Co-60 gamma radiation. This indicates that Protons induce more trapped charges in the field oxide region when compared to the gamma radiation.

  4. A ROIC for Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET sensitive to histamine.

    Science.gov (United States)

    Samah, N L M A; Lee, Khuan Y; Sulaiman, S A; Jarmin, R

    2017-07-01

    Intolerance of histamine could lead to scombroid poisoning with fatal consequences. Current detection methods for histamine are wet laboratory techniques which employ expensive equipment that depends on skills of seasoned technicians and produces delayed test analysis result. Previous works from our group has established that ISFETs can be adapted for detecting histamine with the use of a novel membrane. However, work to integrate ISFETs with a readout interfacing circuit (ROIC) circuit to display the histamine concentration has not been reported so far. This paper concerns the development of a ROIC specifically to integrate with a Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET to display the histamine concentration. It embodies the design of constant voltage constant current (CVCC) circuit, amplification circuit and micro-controller based display circuit. A DC millivolt source is used to substitute the membrane modified ISFET as preliminary work. Input is histamine concentration corresponding to the safety level designated by the Food and Drugs Administration (FDA). Results show the CVCC circuit makes the output follows the input and keeps VDS constant. The amplification circuit amplifies the output from the CVCC circuit to the range 2.406-4.888V to integrate with the microcontroller, which is programmed to classify and display the histamine safety level and its corresponding voltage on a LCD panel. The ROIC could be used to produce direct output voltages corresponding to histamine concentrations, for in-situ applications.

  5. Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Qing-Wen, Song; Xiao-Yan, Tang; Yan-Jing, He; Guan-Nan, Tang; Yue-Hu, Wang; Yi-Meng, Zhang; Hui, Guo; Ren-Xu, Jia; Hong-Liang, Lv; Yi-Men, Zhang; Yu-Ming, Zhang

    2016-03-01

    In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2·V-1·s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs. Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

  6. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

    KAUST Repository

    Isakov, Ivan

    2016-12-29

    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

  7. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

    KAUST Repository

    Isakov, Ivan; Paterson, Alexandra F.; Solomeshch, Olga; Tessler, Nir; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.

    2016-01-01

    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

  8. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  9. Critical role of alkyl chain branching of organic semiconductors in enabling solution-processed N-channel organic thin-film transistors with mobility of up to 3.50 cm² V(-1) s(-1).

    Science.gov (United States)

    Zhang, Fengjiao; Hu, Yunbin; Schuettfort, Torben; Di, Chong-an; Gao, Xike; McNeill, Christopher R; Thomsen, Lars; Mannsfeld, Stefan C B; Yuan, Wei; Sirringhaus, Henning; Zhu, Daoben

    2013-02-13

    Substituted side chains are fundamental units in solution processable organic semiconductors in order to achieve a balance of close intermolecular stacking, high crystallinity, and good compatibility with different wet techniques. Based on four air-stable solution-processed naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) that bear branched alkyl chains with varied side-chain length and different branching position, we have carried out systematic studies on the relationship between film microstructure and charge transport in their organic thin-film transistors (OTFTs). In particular synchrotron measurements (grazing incidence X-ray diffraction and near-edge X-ray absorption fine structure) are combined with device optimization studies to probe the interplay between molecular structure, molecular packing, and OTFT mobility. It is found that the side-chain length has a moderate influence on thin-film microstructure but leads to only limited changes in OTFT performance. In contrast, the position of branching point results in subtle, yet critical changes in molecular packing and leads to dramatic differences in electron mobility ranging from ~0.001 to >3.0 cm(2) V(-1) s(-1). Incorporating a NDI-DTYM2 core with three-branched N-alkyl substituents of C(11,6) results in a dense in-plane molecular packing with an unit cell area of 127 Å(2), larger domain sizes of up to 1000 × 3000 nm(2), and an electron mobility of up to 3.50 cm(2) V(-1) s(-1), which is an unprecedented value for ambient stable n-channel solution-processed OTFTs reported to date. These results demonstrate that variation of the alkyl chain branching point is a powerful strategy for tuning of molecular packing to enable high charge transport mobilities.

  10. Concept of large scale PV-WT-PSH energy sources coupled with the national power system

    Directory of Open Access Journals (Sweden)

    Jurasz Jakub

    2017-01-01

    Full Text Available Intermittent/non-dispatchable energy sources are characterized by a significant variation of their energy yield over time. In majority of cases their role in energy systems is marginalized. However, even in Poland which is strongly dedicated to its hard and brown coal fired power plants, the wind generation in terms of installed capacity starts to play a significant role. This paper briefly introduces a concept of wind (WT and solar (PV powered pumped storage hydroelectricity (PSH which seems to be a viable option for solving the problem of the variable nature of PV and WT generation. Additionally we summarize the results of our so far conducted research on the integration of variable renewable energy sources (VRES to the energy systems and present conclusions which strictly refer to the prospects of large scale PV-WT-PSH operating as a part of the polish energy system.

  11. Effects of improper source coupling in frequency-domain near-infrared spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Noponen, T E J [Turku PET Centre, Turku University Hospital, PO BOX 52, 20521 Turku (Finland); Kotilahti, K; Nissilae, I; Merilaeinen, P T [Department of Biomedical Engineering and Computational Science, Aalto University, PO BOX 12200, 00076 Aalto (Finland); Kajava, T, E-mail: tommi.noponen@tyks.f [Department of Applied Physics, Aalto University, PO Box 15100, 00076 Aalto (Finland)

    2010-05-21

    Currently, there is no widely used method to assess the reliability of contact between optodes and tissue in near-infrared spectroscopy (NIRS). In this study we observe a high linear dependence (R{sup 2} {approx} 0.99) of the logarithmic modulation amplitude (ln(I{sub AC})), average intensity (ln(I{sub DC})) and phase ({phi}) on the source-detector distance (SDD) ranging from {approx}20 to 50 mm on human forehead measurements. The regression of {phi} is clearly reduced in measurements where light leakage occurs, mainly due to insufficient contact between the source optode and tissue. Utilizing this observation, a novel criterion to detect light leakage is developed. The criterion is applied to study the reliability of hemodynamic responses measured on the human forehead when breathing carbon dioxide-enriched air and during hyperventilation. The contrast of the signals is significantly lower in measurements which were adversely affected by light leakage. Furthermore, such unreliable signals at SDDs {>=} 50 mm correlate significantly (for [HbO{sub 2}] p < 0.01 and for [HbR] p < 0.001) better with the signals measured at SDDs < 20 mm. Using this method, poor contact between the source optode and tissue can be detected and corrected before the actual measurement, which enables us to avoid the acquisition of low contrast cortical signals.

  12. Stepwise cyanation of naphthalene diimide for n-channel field-effect transistors

    KAUST Repository

    Chang, Jingjing

    2012-06-15

    Stepwise cyanation of tetrabromonaphthalenediimide (NDI) 1 gave a series of cyanated NDIs 2-5 with the monocyanated NDI 2 and dicyanated NDI 3 isolated. The tri- and tetracyano- NDIs 4 and 5 show intrinsic instability toward moisture because of their extremely low-lying LUMO energy levels. The partially cyanated intermediates can be utilized as air-stable n-type semiconductors with OFET electron mobility up to 0.05 cm 2 V -1 s -1. © 2012 American Chemical Society.

  13. Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

    KAUST Repository

    Ye, Qun

    2012-06-01

    Incorporation of electron-deficient tetracyanoquinodimethane (TCNQ) into electron-rich thiophene-fused heptacene was successfully achieved for the purpose of stabilizing longer acenes and generating new n-type organic semiconductors. The heptacene-TCNQ derivative 1 was found to have good stability and an expected electron transporting property. Electron mobility up to 0.01 cm 2 V -1 s -1 has been obtained for this novel material in solution processed organic field effect transistors. © 2012 American Chemical Society.

  14. SEB circuit-level model in N-channel power MOSFETs

    International Nuclear Information System (INIS)

    Liu, J.; Schrimpf, R.D.; Massengill, L.; Galloway, K.F.

    1999-01-01

    A Single Event Burnout (SEB) circuit model has been developed. The dependence of SEB sensitivity on various parameters is presented and compared with experimental results. The parasitic resistance and capacitance of the device as well as the circuit parameters contribute to the length of SEB pulse. Increasing the switching frequency of the power MOSFET may be a possible way to prevent SEB in applications. (authors)

  15. Detection of caffeine in tea, instant coffee, green tea beverage, and soft drink by direct analysis in real time (DART) source coupled to single-quadrupole mass spectrometry.

    Science.gov (United States)

    Wang, Lei; Zhao, Pengyue; Zhang, Fengzu; Bai, Aijuan; Pan, Canping

    2013-01-01

    Ambient ionization direct analysis in real time (DART) coupled to single-quadrupole MS (DART-MS) was evaluated for rapid detection of caffeine in commercial samples without chromatographic separation or sample preparation. Four commercial samples were examined: tea, instant coffee, green tea beverage, and soft drink. The response-related parameters were optimized for the DART temperature and MS fragmentor. Under optimal conditions, the molecular ion (M+H)+ was the major ion for identification of caffeine. The results showed that DART-MS is a promising tool for the quick analysis of important marker molecules in commercial samples. Furthermore, this system has demonstrated significant potential for high sample throughput and real-time analysis.

  16. Design of 1+ Ion Source Coupling First Design of the Resonant Ionization Laser Ion Source For the Multi-Mega Watt Target Station

    CERN Document Server

    A. Olivier-Kaiser, F. Le Blanc, C. Lau

    The realisation of next-generation ion sources suitable for the EURISOL multi-mega-watt (MMW) target station needs exhaustive studies and developments. An exhaustive review was carried out to evaluate the capability of the ion-sources to operate under the irradiation conditions of the MMW target station. In addition, selectivity must be taken into account to avoid the spread of unwanted radioactivity out of the target-ion-source system (TIS).These studies led to consider RILIS (Resonance Ionization Laser Ion Source) as the reference ion source for this target station.

  17. High-Performance n-Channel Organic Transistors Using High-Molecular-Weight Electron-Deficient Copolymers and Amine-Tailed Self-Assembled Monolayers.

    Science.gov (United States)

    Wang, Yang; Hasegawa, Tsukasa; Matsumoto, Hidetoshi; Mori, Takehiko; Michinobu, Tsuyoshi

    2018-03-01

    While high-performance p-type semiconducting polymers are widely reported, their n-type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high-quality n-type polymers with number-average molecular weight up to 10 5 g mol -1 . Furthermore, by sp 2 -nitrogen atoms (sp 2 -N) substitution, three new n-type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp 2 -N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp 2 -N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine-tailed self-assembled monolayer (SAM) is smoothly formed on a Si/SiO 2 substrate by a simple spin-coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n-type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm 2 V -1 s -1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10 7 is demonstrated for the pSNT-based devices, which are among the highest values for unipolar n-type semiconducting polymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Temperature dependent IDS–VGS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate

    International Nuclear Information System (INIS)

    Liu Yan; Yan Jing; Wang Hongjuan; Han Genquan

    2014-01-01

    We fabricated n-type Si-based TFETs with a Ge source on Si(110) substrate. The temperature dependent I DS –V GS characteristics of a TFET formed on Si(110) are investigated in the temperature range of 210 to 300 K. A study of the temperature dependence of I Leakage indicates that I Leakage is mainly dominated by the Shockley-Read-Hall (SRH) generation—recombination current of the n + drain—Si substrate junction. I ON increases monotonically with temperature, which is attributed to a reduction of the bandgap at the tunneling junction and an enhancement of band-to-band tunneling rate. The subthreshold swing S for trap assisted tunneling (TAT) current and band-to-band tunneling (BTBT) current shows the different temperature dependence. The subthreshold swing S for the TAT current degrades with temperature, while the S for BTBT current is temperature independent. (semiconductor devices)

  19. Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

    Science.gov (United States)

    Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

    2016-04-01

    The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

  20. Pronounced Side Chain Effects in Triple Bond-Conjugated Polymers Containing Naphthalene Diimides for n-Channel Organic Field-Effect Transistors

    KAUST Repository

    Nam, Sungho

    2018-03-23

    Three triple bond-conjugated naphthalene diimide (NDI) copolymers, poly{[N,N′-bis(2-R1)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-[(2,5-bis(2-R2)-1,4-phenylene)bis(ethyn-2,1-diyl)]} (PNDIR1-R2), were synthesized via Sonogashira coupling polymerization with varying alkyl side chains at the nitrogen atoms of the imide ring and 2,5-positions of the 1,4-diethynylbenzene moiety. Considering their identical polymer backbone structures, the side chains were found to have a strong influence on the surface morphology/nanostructure, thus playing a critical role in charge-transporting properties of the three NDI-based copolymers. Among the polymers, the one with an octyldodecyl (OD) chain at the nitrogen atoms of imide ring and a hexadecyloxy (HO) chain at the 2,5-positions of 1,4-diethynylbenzene, P(NDIOD-HO), exhibited the highest electron mobility of 0.016 cm2 V–1 s–1, as compared to NDI-based copolymers with an ethylhexyl chain at the 2,5-positions of 1,4-diethynylbenzene. The enhanced charge mobility in the P(NDIOD-HO) layers is attributed to the well-aligned nano-fiber-like surface morphology and highly ordered packing structure with a dominant edge-on orientation, thus enabling efficient in-plane charge transport. Our results on the molecular structure–charge transport property relationship in these materials may provide an insight into novel design of n-type conjugated polymers for applications in the organic electronics of the future.

  1. Pronounced Side Chain Effects in Triple Bond-Conjugated Polymers Containing Naphthalene Diimides for n-Channel Organic Field-Effect Transistors

    KAUST Repository

    Nam, Sungho; Hahm, Suk Gyu; Khim, Dongyoon; Kim, Hwajeong; Sajoto, Tissa; Ree, Moonhor; Marder, Seth R.; Anthopoulos, Thomas D.; Bradley, Donal D.C.; Kim, Youngkyoo

    2018-01-01

    on the surface morphology/nanostructure, thus playing a critical role in charge-transporting properties of the three NDI-based copolymers. Among the polymers, the one with an octyldodecyl (OD) chain at the nitrogen atoms of imide ring and a hexadecyloxy (HO

  2. Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET

    Directory of Open Access Journals (Sweden)

    Noureddine Maouhoub

    2011-01-01

    Full Text Available We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic (. The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness.

  3. SEB circuit-level model in N-channel power MOSFETs; Modele pour circuits du burnout dans des MOSFETs de puissance de type N

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J.; Schrimpf, R.D.; Massengill, L.; Galloway, K.F. [Vanderbilt Univ., Nashville, TN (United States)

    1999-07-01

    A Single Event Burnout (SEB) circuit model has been developed. The dependence of SEB sensitivity on various parameters is presented and compared with experimental results. The parasitic resistance and capacitance of the device as well as the circuit parameters contribute to the length of SEB pulse. Increasing the switching frequency of the power MOSFET may be a possible way to prevent SEB in applications. (authors)

  4. Fluorination of Metal Phthalocyanines: Single-Crystal Growth, Efficient N-Channel Organic Field-Effect Transistors, and Structure-Property Relationships

    Science.gov (United States)

    Jiang, Hui; Ye, Jun; Hu, Peng; Wei, Fengxia; Du, Kezhao; Wang, Ning; Ba, Te; Feng, Shuanglong; Kloc, Christian

    2014-01-01

    The fluorination of p-type metal phthalocyanines produces n-type semiconductors, allowing the design of organic electronic circuits that contain inexpensive heterojunctions made from chemically and thermally stable p- and n-type organic semiconductors. For the evaluation of close to intrinsic transport properties, high-quality centimeter-sized single crystals of F16CuPc, F16CoPc and F16ZnPc have been grown. New crystal structures of F16CuPc, F16CoPc and F16ZnPc have been determined. Organic single-crystal field-effect transistors have been fabricated to study the effects of the central metal atom on their charge transport properties. The F16ZnPc has the highest electron mobility (~1.1 cm2 V−1 s−1). Theoretical calculations indicate that the crystal structure and electronic structure of the central metal atom determine the transport properties of fluorinated metal phthalocyanines. PMID:25524460

  5. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

    International Nuclear Information System (INIS)

    Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

    2015-01-01

    In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

  6. Evaluation of the capabilities of atmospheric pressure chemical ionization source coupled to tandem mass spectrometry for the determination of dioxin-like polychlorobiphenyls in complex-matrix food samples

    International Nuclear Information System (INIS)

    Portolés, T.; Sales, C.; Abalos, M.; Sauló, J.; Abad, E.

    2016-01-01

    The use of the novel atmospheric pressure chemical ionization (APCI) source for gas chromatography (GC) coupled to triple quadrupole using tandem mass spectrometry (MS/MS) and its potential for the simultaneous determination of the 12 dioxin-like polychlorobiphenyls (DL-PCBs) in complex food and feed matrices has been evaluated. In first place, ionization and fragmentation behavior of DL-PCBs on the APCI source under charge transfer conditions has been studied followed by their fragmentation in the collision cell. Linearity, repeatability and sensitivity have been studied obtaining instrumental limits of detection and quantification of 0.0025 and 0.005 pg μL"−"1 (2.5 and 5 fg on column) respectively for every DL-PCB. Finally, application to real samples has been carried out and DL-PCB congeners (PCB 77, 81, 105, 114, 118, 123, 126, 156, 157, 167, 169, 189) have been detected in the different samples in the range of 0.40–10000 pg g"−"1. GC-(APCI)MS/MS has been proved as a suitable alternative to the traditionally accepted confirmation method based on the use of high resolution mass spectrometry and other triple quadrupole tandem mass spectrometry techniques operating with electron ionization. The development of MS/MS methodologies for the analysis of dioxins and DL-PCBs is nowadays particularly important, since this technique was included as a confirmatory method in the present European Union regulations that establish the requirements for the determination of these compounds in food and feed matrices. - Highlights: • GC-(APCI)MS/MS with QqQ: a suitable alternative to GC-(EI)HRMS for DL-PCBs determination. • LODs and LOQs as low as 0.0025 and 0.005 pg μL"−"1 respectively achieved for each DL-PCB congener. • Enhanced sensitivity and specificity of APCI in comparison with EI source in QqQ instruments.

  7. Evaluation of the capabilities of atmospheric pressure chemical ionization source coupled to tandem mass spectrometry for the determination of dioxin-like polychlorobiphenyls in complex-matrix food samples

    Energy Technology Data Exchange (ETDEWEB)

    Portolés, T., E-mail: tportole@uji.es [Research Institute for Pesticides and Water, University Jaume I, Avda. Sos Baynat, E-12071 Castellón (Spain); Sales, C. [Research Institute for Pesticides and Water, University Jaume I, Avda. Sos Baynat, E-12071 Castellón (Spain); Abalos, M.; Sauló, J.; Abad, E. [Laboratory of Dioxins, IDAEA, CSIC, Jordi Girona 18-26, E-08034 Barcelona (Spain)

    2016-09-21

    The use of the novel atmospheric pressure chemical ionization (APCI) source for gas chromatography (GC) coupled to triple quadrupole using tandem mass spectrometry (MS/MS) and its potential for the simultaneous determination of the 12 dioxin-like polychlorobiphenyls (DL-PCBs) in complex food and feed matrices has been evaluated. In first place, ionization and fragmentation behavior of DL-PCBs on the APCI source under charge transfer conditions has been studied followed by their fragmentation in the collision cell. Linearity, repeatability and sensitivity have been studied obtaining instrumental limits of detection and quantification of 0.0025 and 0.005 pg μL{sup −1} (2.5 and 5 fg on column) respectively for every DL-PCB. Finally, application to real samples has been carried out and DL-PCB congeners (PCB 77, 81, 105, 114, 118, 123, 126, 156, 157, 167, 169, 189) have been detected in the different samples in the range of 0.40–10000 pg g{sup −1}. GC-(APCI)MS/MS has been proved as a suitable alternative to the traditionally accepted confirmation method based on the use of high resolution mass spectrometry and other triple quadrupole tandem mass spectrometry techniques operating with electron ionization. The development of MS/MS methodologies for the analysis of dioxins and DL-PCBs is nowadays particularly important, since this technique was included as a confirmatory method in the present European Union regulations that establish the requirements for the determination of these compounds in food and feed matrices. - Highlights: • GC-(APCI)MS/MS with QqQ: a suitable alternative to GC-(EI)HRMS for DL-PCBs determination. • LODs and LOQs as low as 0.0025 and 0.005 pg μL{sup −1} respectively achieved for each DL-PCB congener. • Enhanced sensitivity and specificity of APCI in comparison with EI source in QqQ instruments.

  8. Evaluation of the capabilities of atmospheric pressure chemical ionization source coupled to tandem mass spectrometry for the determination of dioxin-like polychlorobiphenyls in complex-matrix food samples.

    Science.gov (United States)

    Portolés, T; Sales, C; Abalos, M; Sauló, J; Abad, E

    2016-09-21

    The use of the novel atmospheric pressure chemical ionization (APCI) source for gas chromatography (GC) coupled to triple quadrupole using tandem mass spectrometry (MS/MS) and its potential for the simultaneous determination of the 12 dioxin-like polychlorobiphenyls (DL-PCBs) in complex food and feed matrices has been evaluated. In first place, ionization and fragmentation behavior of DL-PCBs on the APCI source under charge transfer conditions has been studied followed by their fragmentation in the collision cell. Linearity, repeatability and sensitivity have been studied obtaining instrumental limits of detection and quantification of 0.0025 and 0.005 pg μL(-1) (2.5 and 5 fg on column) respectively for every DL-PCB. Finally, application to real samples has been carried out and DL-PCB congeners (PCB 77, 81, 105, 114, 118, 123, 126, 156, 157, 167, 169, 189) have been detected in the different samples in the range of 0.40-10000 pg g(-1). GC-(APCI)MS/MS has been proved as a suitable alternative to the traditionally accepted confirmation method based on the use of high resolution mass spectrometry and other triple quadrupole tandem mass spectrometry techniques operating with electron ionization. The development of MS/MS methodologies for the analysis of dioxins and DL-PCBs is nowadays particularly important, since this technique was included as a confirmatory method in the present European Union regulations that establish the requirements for the determination of these compounds in food and feed matrices. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. Validation of methodologies for the analysis of lead and methyl-ether in gasoline, using the techniques of atomic emission with plasma source coupled inductively and micellar liquid chromatography

    International Nuclear Information System (INIS)

    Redondo Escalante, M.

    1995-01-01

    This study established and optimized the experimental variables for the lead quantization through the Icp-Aes technique, in aqueous media. A comparative study of several proposal methods, that appears in the literature for the extraction in aqueous media of the lead in gasoline was made. It determined that it is not possible, to make this procedure using the reaction of hydrolysis of tetraethyl lead. The op tim conditions were established, for the lead quantization in gasoline, using methyl-isobutyl-ketone and also ethanol as dis solvents. The conditions of the proposed methodologies were optimized, and the variables of analytical performance were defined. It was demonstrated, that it is possible to prepare lead dissolution patterns, in organic media, starting from inorganic salts of this metal. The techniques of chromatography of gases and of liquid chromatography of high pressure, in the analysis of methyl-ter butyl-ether (Mtbe), were compared. It demonstrated that it is possible, to quantize the Mtbe through the HPLC technique, and it found that the 'micellar' liquid chromatography. (author) [es

  10. Effect of graded InGaN drain region and 'In' fraction in InGaN channel on performances of InGaN tunnel field-effect transistor

    Science.gov (United States)

    Duan, Xiaoling; Zhang, Jincheng; Wang, Shulong; Quan, Rudai; Hao, Yue

    2017-12-01

    An InGaN-based graded drain region tunnel field-effect transistor (GD-TFET) is proposed to suppress the ambipolar behavior. The simulation results with the trade-off between on-state current (Ion) and ambipolar current (Iambipolar) show decreased Iambipolar (1.9 × 10-14 A/μm) in comparison with that of conventional TFETs (2.0 × 10-8 A/μm). Furthermore, GD-TFET with high 'In' fraction InxGa1-xN source-side channel (SC- GD-TFET) is explored and exhibits 5.3 times Ion improvement and 60% average subthreshold swing (SSavg) reduction in comparison with GD-TFET by adjusting 'In' fraction in the InxGa1-xN source-side channel. The improvement is attributed to the confinement of BTBT in the source-side channel by the heterojunction. And then, the optimum value for source-side channel length (Lsc) is researched by DC performances results, which shows it falls into the range between Lsc = 10 nm and 20 nm.

  11. Simultaneous protection of organic p- and n-channels in complementary inverter from aging and bias-stress by DNA-base guanine/Al2O3 double layer.

    Science.gov (United States)

    Lee, Junyeong; Hwang, Hyuncheol; Min, Sung-Wook; Shin, Jae Min; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

    2015-01-28

    Although organic field-effect transistors (OFETs) have various advantages of lightweight, low-cost, mechanical flexibility, and nowadays even higher mobility than amorphous Si-based FET, stability issue under bias and ambient condition critically hinder its practical application. One of the most detrimental effects on organic layer comes from penetrated atmospheric species such as oxygen and water. To solve such degradation problems, several molecular engineering tactics are introduced: forming a kinetic barrier, lowering the level of molecule orbitals, and increasing the band gap. However, direct passivation of organic channels, the most promising strategy, has not been reported as often as other methods. Here, we resolved the ambient stability issues of p-type (heptazole)/or n-type (PTCDI-C13) OFETs and their bias-stability issues at once, using DNA-base small molecule guanine (C5H5N5O)/Al2O3 bilayer. The guanine protects the organic channels as buffer/and H getter layer between the channels and capping Al2O3, whereas the oxide capping resists ambient molecules. As a result, both p-type and n-type OFETs are simultaneously protected from gate-bias stress and 30 days-long ambient aging, finally demonstrating a highly stable, high-gain complementary-type logic inverter.

  12. Radiation damage studies of detector-compatible Si JFETs

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Boscardin, Maurizio; Candelori, Andrea; Pancheri, Lucio; Piemonte, Claudio; Ratti, Lodovico; Zorzi, Nicola

    2007-01-01

    We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabrication technology. New devices feature thermal noise values close to the theoretical ones, and remarkably low 1/f noise figures. In view of adopting these JFETs for X-ray imaging and HEP applications, bulk and surface radiation damage tests have been carried out by irradiating single transistors and test structures with neutrons and X-rays. Selected results from static and noise characterization of irradiated devices are discussed in this paper, and the impact of radiation effects on the performance of JFET-based circuits is addressed

  13. S-Cam 3: Optical astronomy with a STJ-based imaging spectrophotometer

    International Nuclear Information System (INIS)

    Verhoeve, P.; Martin, D.D.E.; Hijmering, R.A.; Verveer, J.; Dordrecht, A. van; Sirbi, G.; Oosterbroek, T.; Peacock, A.

    2006-01-01

    S-Cam 3 is the third generation of a cryogenic camera, based on superconducting tunnel junctions (STJs), for ground-based optical astronomy, deployed at the 4.2 m William Herschel Telescope (WHT) at La Palma (Spain). It exploits a 10x12 pixel array of Ta/Al STJs, covering a field of view of ∼9''x11'' on the sky. The wavelength band extends from 330-750 nm, with a wavelength resolving power of ∼10 at 500 nm. The detectors are operated at ∼285 mK, achieved with a double stage 4 He- 3 He sorption cooler. Each pixel has its own electronic readout chain at room temperature, with a JFET-based charge sensitive preamplifier. The instrument has undergone extensive testing and calibration, followed by the first observation campaign at La Palma in July 2004. This campaign has focused on point sources with time variability, exploiting the instrument's unique combination of spectrophotometry with high time resolution

  14. Rank-k Maximal Statistics for Divergence and Probability of Misclassification

    Science.gov (United States)

    Decell, H. P., Jr.

    1972-01-01

    A technique is developed for selecting from n-channel multispectral data some k combinations of the n-channels upon which to base a given classification technique so that some measure of the loss of the ability to distinguish between classes, using the compressed k-dimensional data, is minimized. Information loss in compressing the n-channel data to k channels is taken to be the difference in the average interclass divergences (or probability of misclassification) in n-space and in k-space.

  15. Subthreshold currents in CMOS transistors made on oxygen-implanted silicon

    International Nuclear Information System (INIS)

    Foster, D.J.

    1983-01-01

    Kinks have been observed in subthreshold current plots of mesa-shaped n-channel transistors made on oxygen-implanted silicon substrates. The kinks represent additional current flow and are due to overlapping fields from the gate electrode causing early corner inversion and to a Qsub(ss) side-wall effect. Subthreshold currents in n-channel transistors are dominated by the two effects which, as a consequence, reduce threshold voltages especially in narrow n-channel transistors. The subthreshold characteristics of p-channel transistors were not affected in the same way. (author)

  16. Soluble fullerene derivatives : The effect of electronic structure on transistor performance and air stability

    NARCIS (Netherlands)

    Ball, James M.; Bouwer, Ricardo K.M.; Kooistra, Floris B.; Frost, Jarvist M.; Qi, Yabing; Buchaca Domingo, Ester; Smith, Jeremy; de Leeuw, Dago M.; Hummelen, Jan C.; Nelson, Jenny; Kahn, Antoine; Stingelin, Natalie; Bradley, Donal D.C.; Anthopoulos, Thomas D.

    2011-01-01

    The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic

  17. Observation of Deep Traps Responsible for Current Collapse in GaN Metal-Semiconductor Field-Effect Transistors

    National Research Council Canada - National Science Library

    Klein, P. B; Freitas, Jr., J. A; Binari, S. C; Wickenden, A. E

    1999-01-01

    ... of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice...

  18. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho; Han, Hyemi; Seo, Jooyeok; Song, Myeonghun; Kim, Hwajeong; Anthopoulos, Thomas D.; McCulloch, Iain; Bradley, Donal D C; Kim, Youngkyoo

    2016-01-01

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  19. 78 FR 4381 - Foreign-Trade Zone 45-Portland, Oregon; Application for Reorganization and Expansion Under...

    Science.gov (United States)

    2013-01-22

    ... following sites: Site 1 (1,830 acres)--Rivergate Industrial Park, Port Terminal Nos. 5 and 6, and the... Way and NE Alderwood Road, Portland; Site 3 (254 acres)--Portland Ship Repair Yard, 5555 N. Channel...

  20. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho

    2016-11-18

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  1. Sensors of absorbed dose of ionizing radiation based on mosfet

    Directory of Open Access Journals (Sweden)

    Perevertaylo V. L.

    2010-10-01

    Full Text Available The requirements to technology and design of p-channel and n-channel MOS transistors with a thick oxide layer designed for use in the capacity of integral dosimeters of absorbed dose of ionizing radiation are defined. The technology of radiation-sensitive MOS transistors with a thick oxide in the p-channel and n-channel version is created.

  2. Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

    Science.gov (United States)

    Hoshino, Tomoki; Mori, Nobuya

    2018-04-01

    InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

  3. Digital Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors.

    Science.gov (United States)

    Tremblay, Noah J; Jung, Byung Jun; Breysse, Patrick; Katz, Howard E

    2011-11-22

    Chemiresistors and sensitive OFETs have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Here we report higher order logic circuits utilizing OFETs sensitive to amine vapors. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including an unprecedented analyte-induced current increase by the n-channel semiconductor. This represents the first step towards 'intelligent sensors' that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

  4. CMOS technology and current-feedback op-amps

    DEFF Research Database (Denmark)

    Bruun, Erik

    1993-01-01

    Some of the problems related to the application of CMOS technology to current-feedback operational amplifiers (CFB op-amps) are identified. Problems caused by the low device transconductance and by the absence of matching between p-channel and n-channel transistors are examined, and circuit...

  5. Final Technical Report, Grant DE-FG02-91ER45443: Heavy fermions and other highly correlated electron systems

    International Nuclear Information System (INIS)

    Schlottmann, P.

    1998-01-01

    Properties of highly correlated electrons, such as heavy fermion compounds, metal-insulator transitions, one-dimensional conductors and systems of restricted dimensionality are studied theoretically. The main focus is on Kondo insulators and impurity bands due to Kondo holes, the low-temperature magnetoresistivity of heavy fermion alloys, the n-channel Kondo problem, mesoscopic systems and one-dimensional conductors

  6. Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors

    International Nuclear Information System (INIS)

    Yun, Junggwon; Cho, Kyoungah; Kim, Sangsig

    2010-01-01

    Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) films and n-channel HgSe-NC films were constructed on back-gate patterned plastic substrates. The NAND gate was made of two HgTe-p-channel thin film transistors (TFTs) in parallel and two HgSe-n-channel TFTs in series. The NOR gate was built up with both two HgSe-n-channel TFTs in parallel and two HgTe-p-channel TFTs in series. The mobility and on/off ratio for the p-channel TFTs were estimated to be 0.9 cm 2 V -1 s -1 and 10, respectively, and those for the n-channel TFTs were measured to be 1.8 cm 2 V -1 s -1 and 10 2 , respectively. The NAND and NOR gates were operated with gains of 1.45 and 1.63 and transition widths of 7.8 and 6.2 V, respectively, at room temperature in air. In addition, the operations of the NAND and NOR logics are reproducible for up to 1000 strain cycles.

  7. Modeling Random Telegraph Noise Under Switched Bias Conditions Using Cyclostationary RTS Noise

    NARCIS (Netherlands)

    van der Wel, A.P.; Klumperink, Eric A.M.; Vandamme, L.K.J.; Nauta, Bram

    In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF

  8. Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application

    Science.gov (United States)

    Tsai, Jung-Hui

    2014-01-01

    DC performance of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors (DCFETs) grown on a low-cost GaAs substrate is first demonstrated. In the complementary DCFETs, the n-channel device was fabricated on the InxGa1-xP metamorphic linearly graded buffer layer and the p-channel field-effect transistor was stacked on the top of the n-channel device. Particularly, the saturation voltage of the n-channel device is substantially reduced to decrease the VOL and VIH values attributed that two-dimensional electron gas is formed and could be modulated in the n-InGaAs channel. Experimentally, a maximum extrinsic transconductance of 215 (17) mS/mm and a maximum saturation current density of 43 (-27) mA/mm are obtained in the n-channel (p-channel) device. Furthermore, the noise margins NMH and NML are up to 0.842 and 0.330 V at a supply voltage of 1.5 V in the complementary logic inverter application.

  9. AlGaN/InGaN Nitride Based Modulation Doped Field Effect Transistor

    National Research Council Canada - National Science Library

    Blair, S

    2003-01-01

    The goal of the proposed work is to investigate the potential advantages of the InGaN channel as a host of the 2DEG and to address the material related problems facing this ternary alloy in the AlGaN...

  10. First nondestructive measurements of power MOSFET single event burnout cross sections

    International Nuclear Information System (INIS)

    Oberg, D.L.; Wert, J.L.

    1987-01-01

    A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed

  11. Phi Photoproduction in a Coupled-Channel Approach

    NARCIS (Netherlands)

    Ozaki, S.; Nagahiro, H.; Hosaka, A.; Scholten, O.

    2010-01-01

    We investigate photoproduction of phi-mesons off protons within a coupled-channel effective-Lagrangian method which is based on the K-matrix approach. We take into account pi N, rho N, eta N, K Lambda, K Sigma, K Lambda (1520) and phi N channels. Especially we focus on K Lambda(1520) channel. We

  12. Influence of Closing Storm Surge Barrier on Extreme Water Levels and Water Exchange; The Limfjord, Denmark

    DEFF Research Database (Denmark)

    Nørgaard, Jørgen Quvang Harck; Bentzen, Thomas Ruby; Larsen, Torben

    2014-01-01

    the increased risk of flooding in the estuary has revitalized the discussion whether this connection should be closed. In this paper, it is shown by numerical simulation that the establishment of a storm surge barrier across Thyborøn Channel can significantly reduce the peak water levels in the central...

  13. Conservation of power of the supersonic acoustic intensity

    DEFF Research Database (Denmark)

    Fernandez Grande, Efren; Jacobsen, Finn

    2014-01-01

    The supersonic intensity is a quantity that represents the net acoustic output that a source couples into the medium; it can be regarded as a spatially low-pass filtered version of the active intensity. This spatial filtering can lead to significant error due to spatial truncation. In this paper,...

  14. Control of Strobilurin Fungicides in Wheat Using Direct Analysis in Real Time Accurate Time-of-Flight and Desorption Electrospray Ionization Linear Ion Trap Mass Spectrometry

    NARCIS (Netherlands)

    Schurek, J.; Vaclavik, L.; Hooijerink, H.; Lacina, O.; Poustka, J.; Sharman, M.; Caldow, M.; Nielen, M.W.F.; Hajslova, J.

    2008-01-01

    Ambient mass spectrometry has been used for the analysis of strobilurin residues in wheat. The use of this novel, challenging technique, employing a direct analysis in a real time (DART) ion-source coupled with a time-of-flight mass spectrometer (TOF MS) and a desorption electrospray ionization

  15. Multichannel approach to studying scalar resonances

    International Nuclear Information System (INIS)

    Krupa, D.; Surovtsev, Yu.S.

    1995-11-01

    The multichannel approach to the investigation of resonances is given in order to determine their quantum chromodynamical nature. The formula for the analytic continuation of the N-channel S-matrix to the unphysical sheets of the Riemann surface is given, which is a solution of the N-channel problem in that it enables a prediction of the coupled-process amplitudes on the uniformization plane of the S-matrix. The resonance representations by pairs of complex-conjugate clusters of poles and zeros on the Riemann surface are discussed. The concept of standard clusters as model-independent characteristics of the resonance is developed. 32 refs, 5 figs, 4 tabs

  16. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11

    AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  17. AlN metal-semiconductor field-effect transistors using Si-ion implantation

    Science.gov (United States)

    Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

    2018-04-01

    We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

  18. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

    International Nuclear Information System (INIS)

    Barnaby, Hugh J.; Mclain, Michael; Esqueda, Ivan Sanchez

    2007-01-01

    This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits

  19. Improving the performance of X-ray proportional counters by using field transistor preamplifiers

    International Nuclear Information System (INIS)

    Kalinina, N.I.; Mel'ttser, L.V.; Pan'kin, V.V.

    1972-01-01

    The possibility of using low-noise field-effect transistors with the n-channel in preamplifiers for x-ray proportional counters constitutes the object of this article. The operation of the preamplifier assembled according to the scheme of the voltage amplifier and charge-sensitive preamplifier has been studied. The use of the field-effect transistor with the n-channel in preamplifiers for proportional counters allows to improve significantly the energy resolution and operation at reduced voltage and at high loads. Notably good results have been obtained when constructing the circuit of the premplifier with the field-effect transistor on the charge-sensitive principle. The use of home-produced field-effect transistors makes it possible to construct detectors of roentgen radiometric instruments to measure light element content with proportional counters at reduced voltage

  20. Calculating Second-Order Effects in MOSFET's

    Science.gov (United States)

    Benumof, Reuben; Zoutendyk, John A.; Coss, James R.

    1990-01-01

    Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

  1. Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Atsushi; Lye, Khe Shin; Ueno, Kohei [Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan); Ohta, Jitsuo [Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan); PRESTO, Japan Science and Technology Agency, Saitama 332-0012 (Japan); Fujioka, Hiroshi, E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan); ACCEL, Japan Science and Technology Agency, Tokyo 102-0076 (Japan)

    2016-08-28

    We grew In-rich In{sub x}Ga{sub 1-x}N films on yttria-stabilized zirconia (YSZ) substrates at low temperatures by pulsed sputtering deposition. It was found that single-crystal In{sub x}Ga{sub 1-x}N (0.63 ≤ x ≤ 0.82) films can be prepared without significant compositional fluctuations at growth temperatures below 500 °C. It was also found that the electrical properties of InGaN are strongly dependent on In composition, growth temperature, and film polarity. N-channel operation of the metal–insulator–semiconductor field-effect transistor (MISFET) with an ultrathin InGaN channel on the YSZ substrates was successfully demonstrated. These results indicate that an InGaN-based MISFET is a promising device for next-generation high-speed electronics.

  2. Electrical and optical analyses of low fluence fast neutron damage to JFETs

    International Nuclear Information System (INIS)

    Hoffmann, A.; Charles, J.P.; Kerns, S.E.; Kerns, D.V. Jr.; Bardonnie, M. de la; Mialhe, P.

    1999-01-01

    The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analysed at 3 fluences: 4,06*10 10 , 8,12*10 10 and 1,22*10 11 n/cm 2 for a flux of 2,82*10 6 n/s*cm 2 and using a custom software. Electrical parameter changes are attributed to bulk semi-conductor defects. Irradiation effects on passivation overlayers are evacuate using analysis of gate-channel junction electroluminescence. This study shows that even for low neutron fluences (10 11 n/cm 2 ), n-channel JFETs, characterized in direct conducting mode and submitted to neutron radiation, present a decrease in the reverse saturation current associated with recombination. (A.C.)

  3. Cryogenic switched MOSFET characterization

    Science.gov (United States)

    1981-01-01

    Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

  4. Electric dipole moment of the deuteron in the standard model with NN - ΛN - ΣN coupling

    Science.gov (United States)

    Yamanaka, Nodoka

    2017-07-01

    We calculate the electric dipole moment (EDM) of the deuteron in the standard model with | ΔS | = 1 interactions by taking into account the NN - ΛN - ΣN channel coupling, which is an important nuclear level systematics. The two-body problem is solved with the Gaussian Expansion Method using the realistic Argonne v18 nuclear force and the YN potential which can reproduce the binding energies of Λ3H, Λ3He, and Λ4He. The | ΔS | = 1 interbaryon potential is modeled by the one-meson exchange process. It is found that the deuteron EDM is modified by less than 10%, and the main contribution to this deviation is due to the polarization of the hyperon-nucleon channels. The effect of the YN interaction is small, and treating ΛN and ΣN channels as free is a good approximation for the EDM of the deuteron.

  5. Resistor-less charge sensitive amplifier for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

    2016-11-01

    A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

  6. Dramatic inversion of charge polarity in diketopyrrolopyrrole-based organic field-effect transistors via a simple nitrile group substitution.

    Science.gov (United States)

    Yun, Hui-Jun; Kang, Seok-Ju; Xu, Yong; Kim, Seul Ong; Kim, Yun-Hi; Noh, Yong-Young; Kwon, Soon-Ki

    2014-11-19

    A record-breaking high electron mobility of 7.0 cm(2) V(-1) s(-1) for n-channel polymer OFETs is reported. By the incorporation of only one nitrile group as an electron-withdrawing function in the vinyl linkage of the DPP-based copolymer, a dramatic inversion of majority charge-carriers from holes to electrons is achieved. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Six-quark configurations in the NN system correlated with experiment

    International Nuclear Information System (INIS)

    Gorovoy, V.S.; Obukhovskij, I.T.

    1996-01-01

    The nucleon-nucleon interaction at short range is analyzed in terms of six-quark configuration. It is shown that in low partial waves L = 0, 1 system has a two-channel character: the N N channel and the inner six-quark state (bag) with specific color-spin structure. It is shown that polarization observables could be a good tool for investigation of a quark structure of the deuteron [ru

  8. Dissociation reactions of the 11Be one-neutron halo: the interplay between structure and reaction mechanism

    International Nuclear Information System (INIS)

    Anne, R.; Lewitowicz, M.; Saint-Laurent, M.G.; Arnell, S.E.; Jonson, B.; Nilsson, T.; Nyman, G.; Wilhelmsen Rolander, K.; Esbensen, H.; Wolski, D.

    1992-01-01

    Reactions of a radioactive 11 Be beam at 41 MeV/u have been investigated. The absolute magnitude of the differential cross-sections of the forward neutrons in the exclusive ( 10 Be + n) channel can be accounted for quantitatively in a simple model. The narrow distribution from high-Z targets turns out to arise from Coulomb dissociation whereas the broad distribution from the beryllium target is due to diffraction dissociation

  9. Distributions of Conductance and Shot Noise and Associated Phase Transitions

    International Nuclear Information System (INIS)

    Vivo, Pierpaolo; Majumdar, Satya N.; Bohigas, Oriol

    2008-01-01

    For a chaotic cavity with two identical leads each supporting N channels, we compute analytically, for large N, the full distribution of the conductance and the shot noise power and show that in both cases there is a central Gaussian region flanked on both sides by non-Gaussian tails. The distribution is weakly singular at the junction of Gaussian and non-Gaussian regimes, a direct consequence of two phase transitions in an associated Coulomb gas problem

  10. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Science.gov (United States)

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  11. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

    Science.gov (United States)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Koo, Yong-Seo; Kim, Sangsig

    2009-11-11

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  12. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

    International Nuclear Information System (INIS)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig; Koo, Yong-Seo

    2009-01-01

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p + drain and n + channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  13. Effects of electron-hole generation, transport and trapping in MOSFETs due to γ-ray exposure

    International Nuclear Information System (INIS)

    Soliman, F.A.S.; Al-Kabbani, A.S.S.

    1995-01-01

    Ionizing radiation has been found to seriously change the electrical properties of solid-state devices, leading to possible systems failure. The ionizing radiation effects on different n-and p-channel MOSFETs have been studied, where the failure mechanism is found to be mainly due to changes in oxide properties and surface effects which occur in the gate oxide and, or, field/oxide regions. As a result, the threshold voltage of the n-channel transistor was shifted from 1.10 to 2.65 V, while the channel mobility for both the n- and p-channel transistors decreases from 4500 and 3100 to 2000 and 1000 m 2 /V·, respectively. Besides, the transconductance drops from 610, 500 and 380 down to 51, 35 and 150 mS for the MFE 201 (n-channel), 3N128 (n-channel) and 3N163 (p-channel) transistors, respectively. Also, the net effect of charge trapping can also be seen as a random, stochastical process represented by global noise parameters. Finally, the gain and noise parameters have been investigated as a function of γ-dose. (Author)

  14. Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

    Science.gov (United States)

    Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

    2011-08-01

    Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

  15. Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter.

    Science.gov (United States)

    Park, Junsu; Kim, Minseok; Yeom, Seung-Won; Ha, Hyeon Jun; Song, Hyenggun; Min Jhon, Young; Kim, Yun-Hi; Ju, Byeong-Kwon

    2016-06-03

    We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V(-1) s(-1) for the p-channel and 0.027 cm(2) V(-1) s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.

  16. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    Science.gov (United States)

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  17. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  18. Supplymentary type semiconductor device and manufacturing method. Soho gata handotai sochi oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Uno, Masaaki

    1990-01-08

    As a supplementary type semiconductor device has a complicated structure, it is extremely difficult to construct it in a three dimensional structure. This invention aims to reduce its occupying area by forming p-channel and n-channel transistors in a solid structure; moreover in an easy method of production. In other words, an opening is made in the element-forming region of a semiconductor substrate, forming a gate-insulation film on each of the p-type and n-type semiconductors which are exposed on the two facing surfaces; on it formed a gate electrode; p-type semiconductor surface is used as a channel domain; a drain region of n-channel transistor on one surface and a source region on another surface; the n-type semiconductor surface corresponding to the gate electrode is used as a channel region; a source region of the n-channel transistor is formed on the same surface and the drain region on the substrate surface. Occupied area is thus made less and the production gets easier. 20 figs.

  19. Ultrasonically-assisted Thermal Stir Welding System

    Science.gov (United States)

    Ding, R. Jeffrey (Inventor)

    2014-01-01

    A welding head assembly has a work piece disposed between its containment plates' opposing surfaces with the work piece being maintained in a plastic state thereof at least in a vicinity of the welding head assembly's stir rod as the rod is rotated about its longitudinal axis. The welding head assembly and the work piece experience relative movement there between in a direction perpendicular to the rod's longitudinal axis as the work piece is subjected to a compressive force applied by the containment plates. A first source coupled to the first containment plate applies a first ultrasonic wave thereto such that the first ultrasonic wave propagates parallel to the direction of relative movement. A second source coupled to the second containment plate applies a second ultrasonic wave thereto such that the second ultrasonic wave propagates parallel to the direction of relative movement.propagates parallel to the direction of relative movement.

  20. Initial use of the positive-ion injector of ATLAS

    International Nuclear Information System (INIS)

    Bollinger, L.M.; Billquist, P.J.; Bogaty, J.M.; Clifft, B.E.; Den Hartog, P.K.; Munson, F.H. Jr.; Pardo, R.C.; Shepard, K.W.; Zinkann, G.P.

    1989-01-01

    The positive-ion injector of ATLAS consists of an ECR heavy-ion source coupled to a 12-MV superconducting injector linac. The ECR source and a 3-MV version of the partially completed linac have been used to accelerate successfully several species of heavy ions. The operating experience is summarized, with emphasis on the excellent beam quality of beams from the new injector. Two new fast-timing detectors are described. 9 refs., 5 figs., 1 tab

  1. Investigation of the particle size distribution and particle density characteristics of Douglas fir hogged fuel fly ash collected under known combustion conditions. Technical Progress Report No. 2

    Energy Technology Data Exchange (ETDEWEB)

    Lang, A.J.; Junge, D.C.

    1978-12-01

    The increased interest in wood as a fuel source, coupled with the increasing demand to control the emission generated by wood combustion, has created a need for information characterizing the emissions that occur for given combustion conditions. This investigation characterizes the carbon char and inorganic fly ash size and density distribution for each of thirty-eight Douglas fir bark samples collected under known conditions of combustion.

  2. New applications of Boson's coherent states of double modes at regular product

    International Nuclear Information System (INIS)

    Zhang Yongde; Ren Yong

    1987-05-01

    This paper presents a series of new applications of boson's coherent states of double modes by means of the technique of regular products. They include non-coupled double oscillator solutions at two time dependent extra-sources; coupled double oscillator solutions at two time dependent extra-sources; some applications to regular momentum theory; an explicit expression for time-reversal operator. (author). 7 refs

  3. Examining the economics of seawater desalination using the DEEP code

    International Nuclear Information System (INIS)

    2000-11-01

    This Technical Document presents analysis of the results of the study initiated by the IAEA on comparison of costs of nuclear and fossil fuel energy sources coupled with selected seawater desalination processes, including regional studies and sensitivity analysis. The economical modelling was performed with use of the Desalination Economic Evaluation Program code (DEEP) released in 1998 which incorporated the latest advances in economic modelling and technological changes in both desalination and reactor technologies

  4. Comparison and Design of High Efficiency Microinverters for Photovoltaic Applications

    OpenAIRE

    Dominic, Jason

    2014-01-01

    With the decrease in availability of non-renewable energy sources coupled with the increase in the amount of energy required for the operation of personal electronic devices there has been an increased focus on developing systems that take advantage of renewable energy sources. Renewal energy sources such as photovoltaic (PV) panels have become more popular due to recent developments in PV panel manufacturing that decreases material costs and improves energy harvesting efficiency. Since PV so...

  5. Transient hardened power FETs

    International Nuclear Information System (INIS)

    Dawes, W.R. Jr.; Fischer, T.A.; Huang, C.C.C.; Meyer, W.J.; Smith, C.S.; Blanchard, R.A.; Fortier, T.J.

    1986-01-01

    N-channel power FETs offer significant advantages in power conditioning circuits. Similiarily to all MOS technologies, power FET devices are vulnerable to ionizing radiation, and are particularily susceptible to burn-out in high dose rate irradiations (>1E10 rads(Si)/sec.), which precludes their use in many military environments. This paper will summarize the physical mechanisms responsible for burn-out, and discuss various fabrication techniques designed to improve the transient hardness of power FETs. Power FET devices were fabricated with several of these techniques, and data will be presented which demonstrates that transient hardness levels in excess of 1E12 rads(Si)/sec. are easily achievable

  6. Monolithic JFET preamplifier for ionization chamber calorimeter

    International Nuclear Information System (INIS)

    Radeka, V.; Rescia, S.; Manfredi, P.F.; Speziali, V.

    1990-10-01

    A monolithic charge sensitive preamplifier using exclusively n-channel diffused JFETs has been designed and is now being fabricated by INTERFET Corp. by means of a dielectrically isolated process which allows preserving as much as possible the technology upon which discrete JFETs are based. A first prototype built by means of junction isolated process has been delivered. The characteristics of monolithically integrated JFETs compare favorably with discrete devices. First results of tests of a preamplifier which uses these devices are reported. 4 refs

  7. A coupled-channels analysis of pion scattering and pion-induced eta production on the nucleon

    International Nuclear Information System (INIS)

    Pratt, R.K.; Bennhold, C.; Surya, Y.

    1995-01-01

    Motivated by new, upcoming Brookhaven data, pion scattering and pion-induced eta production on the nucleon in the S 11 (1535) resonance region is studied in an extension of the unitary, relativistic resonance model by Surya and Gross. The Kernel of the relativistic wave equation includes the nucleon, Roper, δ(1232), D 13 (1520) and S 11 (1535) pole terms along with contact σ- and ρ-like exchange terms. The formalism includes a coupling between the πN and ηN channels. The resonance parameters are adjusted to reproduce the experimental πN phase shifts

  8. Heavy fermions and other highly correlated electron systems

    International Nuclear Information System (INIS)

    Schlottmann, P.

    1991-01-01

    In this paper I given a brief summary of the achievements grouped under three main headings, namely (1) heavy-fermion, mixed-valence and Kondo systems, (2) the n-channel Kondo problem and applications, and (3) one-dimensional conductors and antiferromagnets. The list of published papers and preprints is attached to the report, as well as a list of abstracts submitted to Conferences. All these papers are new in the sense that none of them was listed in the final technical report of grant DE-FG02-87ER45333

  9. Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

    International Nuclear Information System (INIS)

    Prakash, A. P. Gnana; Pushpa, N.; Praveen, K. C.; Naik, P. S.; Revannasiddaiah, D.

    2012-01-01

    In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

  10. Investigation of defect-induced abnormal body current in fin field-effect-transistors

    International Nuclear Information System (INIS)

    Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Yang, Ren-Ya; Cheng, Osbert; Huang, Cheng-Tung

    2015-01-01

    This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal

  11. DIRECT TUNNELLING AND MOSFET BORDER TRAPS

    Directory of Open Access Journals (Sweden)

    Vladimir Drach

    2015-09-01

    Full Text Available The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementation of the experimental setup had made it possible to complete the entire set of measurements. The schematic diagram of automated experimental setup is shown. The charging time characteristic of the ID-VG shift reveals that the charging process is a direct tunnelling process and highly bias dependent.

  12. The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETs

    International Nuclear Information System (INIS)

    Chang, S.T.; Liao, S.H.; Lin, C.-Y.

    2008-01-01

    An effect of stress distortion on the conduction band structure was derived by k.p method considering a second order perturbation. From k.p conduction band calculations, stress-induced band edge split and the change of effective mass are quantitatively evaluated. The physical reasons of warped subband structure and abnormal mobility enhancement by uniaxial stress are investigated. Variation rates of experimental electron mobility in the silicon n-channel metal-oxide-semiconductor field-effect-transistors under a [110] uniaxial stress as a function of channel direction is theoretically studied

  13. Combined in-beam electron and γ-ray spectroscopy of 184,186Hg

    International Nuclear Information System (INIS)

    Scheck, M.; Butler, P. A.; Gaffney, L. P.; Carrol, R. J.; Cox, D.; Joss, D. T.; Herzberg, R.-D.; Page, R. D.; Papadakis, P.; Watkins, H. V.; Bree, N.; Huyse, M.; Van Duppen, P.; Grahn, T.; Greenlees, P. T.; Herzan, A.; Jakobsson, U.; Jones, P.; Julin, R.; Juutinen, S.

    2011-01-01

    By exploiting the SAGE spectrometer a simultaneous measurement of conversion electrons and γ rays emitted in the de-excitation of excited levels in the neutron-deficient nuclei 184,186 Hg was performed. The light Hg isotopes under investigation were produced using the 4n channels of the fusion-evaporation reactions of 40 Ar and 148,150 Sm. The measured K- and L-conversion electron ratios confirmed the stretched E2 nature of several transitions of the yrast bands in 184,186 Hg. Additional information on the E0 component of the 2 2 + →2 1 + transition in 186 Hg was obtained.

  14. Combined in-beam electron and gamma-ray spectroscopy of (184,186)Hg

    CERN Document Server

    Scheck, M; Rahkila, P; Butler, P A; Larsen, A C; Sandzelius, M; Scholey, C; Carrol, R J; Papadakis, P; Jakobsson, U; Grahn, T; Joss, D T; Watkins, H V; Juutinen, S; Bree, N; Cox, D; Huyse, M; Uusitalo, J; Leino, M; Ruotsalainen, P; Nieminen, P; Srebrny, J; Van Duppen, P; Herzan, A; Greenlees, P T; Julin, R; Herzberg, R D; Hauschild, K; Pakarinen, J; Page, R D; Peura, P; Gaffney, L P; Kowalczyk, M; Rinta-Antila, S; Saren, J; Lopez-Martens, A; Sorri, J; Ketelhut, S

    2011-01-01

    By exploiting the SAGE spectrometer a simultaneous measurement of conversion electrons and gamma rays emitted in the de-excitation of excited levels in the neutron-deficient nuclei (184,186)Hg was performed. The light Hg isotopes under investigation were produced using the 4n channels of the fusion-evaporation reactions of (40)Ar and (148,150)Sm. The measured K- and L-conversion electron ratios confirmed the stretched E2 nature of several transitions of the yrast bands in (184,186)Hg. Additional information on the E0 component of the 2(2)(+) -> 2(1)(+) transition in (186)Hg was obtained.

  15. Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana; Pushpa, N.; Praveen, K. C.; Naik, P. S.; Revannasiddaiah, D. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India)

    2012-06-05

    In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

  16. Planar self-aligned ion implanted InP MISFETS for fast logic applications

    International Nuclear Information System (INIS)

    Cameron, D.C.; Irving, L.D.; Whitehouse, C.R.; Woodward, J.; Lee, D.

    1983-01-01

    The first successful use of ion implantation to fabricate truly self-aligned planar n-channel enhancement-mode indium phosphide MISFITS is reported. The transistors have been fabricated on iron-doped semi-insulating material using PECVD-deposited SiO 2 as the gate dielectric and molybdenum gate electrodes. The self-aligned source and drain contact regions were produced by Si 29 ion implantation using each gate stripe as an implant mask. The devices fabricated to date have exhibited channel mobilities up to value of 2400 cm 2 v -1 s -1 , with excellent uniformity and stability of the device characteristics also being observed. (author)

  17. Influence of gamma-ray irradiation on 6H-SiC MOSFETs

    International Nuclear Information System (INIS)

    Ohshima, Takeshi; Yoshikawa, Masahito; Itoh, Hisayoshi; Nashiyama, Isamu; Okada, Sohei

    1998-01-01

    Enhancement-type n-channel MOSFETs were fabricated on 6H-SiC epitaxial films using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in 6H-Sic MOSFETs by gamma-ray irradiation are evaluated from changes in the subthreshold-current curve. The net numbers of radiation-induced-oxide-trapped charges and interface traps depend on the oxidation process. The 6H-SiC MOSFETs exhibit higher radiation resistance than Si MOSFETs. (author)

  18. Implementation of a Dual on Die 140 V Super-Junction Power Transistors

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

    Increasing the switching frequency for switch mode power supplies is one method to achieve smaller, lighter weight and hopefully cheaper power converters. Silicon is not only the dominant material used to produce the switches but also it allows more circuitry to be easily integrated on the same d....... This work presents an application customized switches to be used in switch mode power supplies. The prototype chip was implemented using a 0.18 μm SOI process and includes dual electrically isolated 140 V, 1.2 Ω N-channel MOSFETs....

  19. Effects of Thermal Cycling on Control and Irradiated EPC 2nd Generation GaN FETs

    Science.gov (United States)

    Patterson, Richard L.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

    2013-01-01

    The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed.

  20. Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

    Science.gov (United States)

    Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

    2014-01-01

    The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

  1. The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

    Directory of Open Access Journals (Sweden)

    Đorić-Veljković Snežana M.

    2013-01-01

    Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

  2. New gas-filled mode of the large-acceptance spectrometer VAMOS

    International Nuclear Information System (INIS)

    Schmitt, C.; Rejmund, M.; Navin, A.; Lecornu, B.; Jacquot, B.; France, G. de; Lemasson, A.; Shrivastava, A.; Greenlees, P.; Uusitalo, J.; Subotic, K.; Gaudefroy, L.; Theisen, Ch.; Sulignano, B.; Dorvaux, O.; Stuttge, L.

    2010-01-01

    A new gas-filled operation mode of the large-acceptance spectrometer VAMOS at GANIL is reported. A beam rejection factor greater than 10 10 is obtained for the 40 Ca+ 150 Sm system at 196 MeV. The unprecedented transmission efficiency for the evaporation residues produced in this reaction is estimated to be around 80% for αx n channels and above 95% for x ny p channels. A detailed study of the performance of the gas-filled VAMOS and future developments are discussed. This new operation mode opens avenues to explore the potential of fusion reactions in various kinematics.

  3. Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

    Science.gov (United States)

    Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

    2013-01-01

    Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

  4. Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Petukhov, M. A., E-mail: m.a.petukhov@gmail.com; Ryazanov, A. I. [National Research Center Kurchatov Institute (Russian Federation)

    2016-12-15

    The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

  5. Plasma Generator Using Spiral Conductors

    Science.gov (United States)

    Szatkowski, George N. (Inventor); Dudley, Kenneth L. (Inventor); Ticatch, Larry A. (Inventor); Smith, Laura J. (Inventor); Koppen, Sandra V. (Inventor); Nguyen, Truong X. (Inventor); Ely, Jay J. (Inventor)

    2016-01-01

    A plasma generator includes a pair of identical spiraled electrical conductors separated by dielectric material. Both spiraled conductors have inductance and capacitance wherein, in the presence of a time-varying electromagnetic field, the spiraled conductors resonate to generate a harmonic electromagnetic field response. The spiraled conductors lie in parallel planes and partially overlap one another in a direction perpendicular to the parallel planes. The geometric centers of the spiraled conductors define endpoints of a line that is non-perpendicular with respect to the parallel planes. A voltage source coupled across the spiraled conductors applies a voltage sufficient to generate a plasma in at least a portion of the dielectric material.

  6. Extreme low-power mixed signal IC design

    CERN Document Server

    Tajalli, Armin

    2010-01-01

    This book describes a completely novel class of techniques for designing ultra-low-power integrated circuits (ICs). In many applications such as battery operated systems and battery-less (energy-scavenging) systems, power dissipation is a critical parameter. As a result, there is a growing demand for reducing the power (energy) consumption in ICs to extremely low levels, not achievable by using classical ""subthreshold CMOS"" techniques. This book introduces a new family of ""subthreshold circuits"" called ""source-coupled circuits"". This family of circuits can be used for implementing digita

  7. Thermoradiation treatment of sewage sludge using reactor waste to obtain acceptable fertilizer or animal supplement feed

    International Nuclear Information System (INIS)

    Sivinski, H.D.

    1976-01-01

    This document is a report of the Beneficial Uses Program. This program consists of a number of activities at Sandia Laboratories to develop the necessary technology for cost-beneficial use of a maximum amount of radioactive waste. Major activity is currently concentrated in the Waste Resources Utilization Program which has as its objective the use of cesium-134/137 as a gamma radiation source, coupled with modest heating, to treat sewage sludge to rid it of pathogenic organisms so that it may safely be used as a fertilizer or a feed supplement for ruminant animals. (author)

  8. D-brane gases and stabilization of extra dimensions in dilaton gravity

    International Nuclear Information System (INIS)

    Arapoglu, Savas; Kaya, Ali

    2004-01-01

    We consider a toy cosmological model with a gas of wrapped Dp-branes in 10-dimensional dilaton gravity compactified on a p-dimensional Ricci flat internal manifold. A consistent generalization of the low energy effective field equations in the presence of a conserved brane source coupled to dilaton is obtained. It is then shown that the compact dimensions are dynamically stabilized in string frame as a result of a balance between negative winding and positive momentum pressures. Curiously, when p=6, i.e., when the observed space is three-dimensional, the dilaton becomes a constant and stabilization in Einstein frame is also realized

  9. Efficient 'water window' soft x-ray high-Z plasma source

    International Nuclear Information System (INIS)

    Higashiguchi, T; Otsuka, T; Jiang, W; Endo, A; Li, B; Dunne, P; O'Sullivan, G

    2013-01-01

    Unresolved transition array (UTA) is scalable to shorter wavelengths, and we demonstrate a table-top broadband emission 'water window' soft x-ray source based on laser-produced plasmas. Resonance emission from multiply charged ions merges to produce intense UTAs in the 2 to 4 nm region, extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on a bismuth (Bi) plasma UTA source, coupled to multilayer mirror optics

  10. Characteristics of extreme ultraviolet emission from high-Z plasmas

    International Nuclear Information System (INIS)

    Ohashi, H.; Higashiguchi, T.; Suzuki, Y.; Kawasaki, M.; Suzuki, C.; Tomita, K.; Nishikino, M.; Fujioka, S.; Endo, A.; Li, B.; Otsuka, T.; Dunne, P.; O'Sullivan, G.

    2016-01-01

    We demonstrate the extreme ultraviolet (EUV) and soft x-ray sources in the 2 to 7 nm spectral region related to the beyond EUV (BEUV) question at 6.x nm and the water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs), extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on high-Z plasma UTA source, coupled to multilayer mirror optics. (paper)

  11. Feasibility study of broadband efficient ''water window'' source

    Energy Technology Data Exchange (ETDEWEB)

    Higashiguchi, Takeshi; Yugami, Noboru [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), and Optical Technology Innovation Center (OpTIC), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Japan Science and Technology Agency, CREST, 4-1-8 Honcho, Kanagawa, Saitama 332-0012 (Japan); Otsuka, Takamitsu [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), and Optical Technology Innovation Center (OpTIC), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Jiang Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan); Endo, Akira [Research Institute for Science and Engineering, Waseda University, Okubo 3-4-1, Shinjuku, Tokyo 169-8555 (Japan); Li Bowen; Dunne, Padraig; O' Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)

    2012-01-02

    We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs) in the 2-4 nm region, extending below the carbon K edge (4.37 nm). Arrays resulting from n=4-n=4 transitions are overlaid with n=4-n=5 emission and shift to shorter wavelength with increasing atomic number. An outline of a microscope design for single-shot live cell imaging is proposed based on a bismuth plasma UTA source, coupled to multilayer mirror optics.

  12. Feasibility study of broadband efficient ''water window'' source

    International Nuclear Information System (INIS)

    Higashiguchi, Takeshi; Yugami, Noboru; Otsuka, Takamitsu; Jiang Weihua; Endo, Akira; Li Bowen; Dunne, Padraig; O'Sullivan, Gerry

    2012-01-01

    We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs) in the 2-4 nm region, extending below the carbon K edge (4.37 nm). Arrays resulting from n=4-n=4 transitions are overlaid with n=4-n=5 emission and shift to shorter wavelength with increasing atomic number. An outline of a microscope design for single-shot live cell imaging is proposed based on a bismuth plasma UTA source, coupled to multilayer mirror optics.

  13. Tapered diode laser pumped 946 nm Nd:YAG laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2009-01-01

    We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

  14. Telescoping cylindrical piezoelectric fiber composite actuator assemblies

    Science.gov (United States)

    Allison, Sidney G. (Inventor); Shams, Qamar A. (Inventor); Fox, Robert L. (Inventor); Fox, legal representative, Christopher L. (Inventor); Fox Chattin, legal representative, Melanie L. (Inventor)

    2010-01-01

    A telescoping actuator assembly includes a plurality of cylindrical actuators in a concentric arrangement. Each cylindrical actuator is at least one piezoelectric fiber composite actuator having a plurality of piezoelectric fibers extending parallel to one another and to the concentric arrangement's longitudinal axis. Each cylindrical actuator is coupled to concentrically-adjacent ones of the cylindrical actuators such that the plurality of cylindrical actuators can experience telescopic movement. An electrical energy source coupled to the cylindrical actuators applies actuation energy thereto to generate the telescopic movement.

  15. Characteristics of extreme ultraviolet emission from high-Z plasmas

    Science.gov (United States)

    Ohashi, H.; Higashiguchi, T.; Suzuki, Y.; Kawasaki, M.; Suzuki, C.; Tomita, K.; Nishikino, M.; Fujioka, S.; Endo, A.; Li, B.; Otsuka, T.; Dunne, P.; O'Sullivan, G.

    2016-03-01

    We demonstrate the extreme ultraviolet (EUV) and soft x-ray sources in the 2 to 7 nm spectral region related to the beyond EUV (BEUV) question at 6.x nm and the water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs), extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on high-Z plasma UTA source, coupled to multilayer mirror optics.

  16. The exact mass-gaps of the principal chiral models

    CERN Document Server

    Hollowood, Timothy J

    1994-01-01

    An exact expression for the mass-gap, the ratio of the physical particle mass to the $\\Lambda$-parameter, is found for the principal chiral sigma models associated to all the classical Lie algebras. The calculation is based on a comparison of the free-energy in the presence of a source coupling to a conserved charge of the theory computed in two ways: via the thermodynamic Bethe Ansatz from the exact scattering matrix and directly in perturbation theory. The calculation provides a non-trivial test of the form of the exact scattering matrix.

  17. Biocompetitive exclusion technology: A field system to control reservoir souring and increasing production

    Energy Technology Data Exchange (ETDEWEB)

    Sandbeck, K.A.; Hitzman, D.O.

    1995-12-31

    Biogenic formation of sulfide in reservoirs by Sulfate Reducing Bacteria (SRB) causes serious plugging, corrosion, and environmental safety problems. The production of sulfide can be decreased, and its concentration reduced, by the establishment and growth of an indigenous microbial population which results in a replacement of the SRB population. This approach to modify the reservoir ecology utilizing preexisting carbon sources coupled with the introduction of an alternate electron acceptor forms the basis of a new Biocompetitive Exclusion technology which has the potential to enhance oil recovery and decrease paraffin deposition and corrosion. Preliminary field results from an ongoing DOE-sponsored research program will be discussed.

  18. Radiation-induced off-state leakage current in commercial power MOSFETs

    International Nuclear Information System (INIS)

    Dodd, Paul Emerson; Shaneyfelt, Marty Ray; Draper, Bruce Leroy; Felix, James Andrew; Schwank, James Ralph; Dalton, Scott Matthew

    2005-01-01

    The total dose hardness of several commercial power MOSFET technologies is examined. After exposure to 20 krad(SiO 2 ) most of the n- and p-channel devices examined in this work show substantial (2 to 6 orders of magnitude) increases in off-state leakage current. For the n-channel devices, the increase in radiation-induced leakage current follows standard behavior for moderately thick gate oxides, i.e., the increase in leakage current is dominated by large negative threshold voltage shifts, which cause the transistor to be partially on even when no bias is applied to the gate electrode. N-channel devices biased during irradiation show a significantly larger leakage current increase than grounded devices. The increase in leakage current for the p-channel devices, however, was unexpected. For the p-channel devices, it is shown using electrical characterization and simulation that the radiation-induced leakage current increase is related to an increase in the reverse bias leakage characteristics of the gated diode which is formed by the drain epitaxial layer and the body. This mechanism does not significantly contribute to radiation-induced leakage current in typical p-channel MOS transistors. The p-channel leakage current increase is nearly identical for both biased and grounded irradiations and therefore has serious implications for long duration missions since even devices which are usually powered off could show significant degradation and potentially fail.

  19. Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

    Science.gov (United States)

    Liau, Leo Chau-Kuang; Lin, Yun-Guo

    2015-01-01

    Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

  20. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-Dong, Seongbuk-Gu, Seoul 136-701 (Korea, Republic of); Koo, Yong-Seo, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering, Seokyeong University, 16-1, Jungneung-dong, Seongbuk-gu, Seoul 136-704 (Korea, Republic of)

    2009-11-11

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p{sup +} drain and n{sup +} channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  1. Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

    International Nuclear Information System (INIS)

    Ghosh, Krishnendu; Singisetti, Uttam

    2015-01-01

    N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density

  2. High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode

    Science.gov (United States)

    Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

    2016-12-01

    Solution processed photoactive PbS quantum dots (QDs) were used as channel in high-performance near-infrared vertical field-effect phototransistor (VFEpT) where monolayer graphene embedded as transparent electrode. In this vertical architecture, the PbS QD channel was sandwiched and naturally protected between the drain and source electrodes, which made the device ultrashort channel length (110 nm) simply the thickness of the channel layer. The VFEpT exhibited ambipolar operation with high mobilities of μe = 3.5 cm2/V s in n-channel operation and μh = 3.3 cm2/V s in p-channel operation at low operation voltages. By using the photoactive PbS QDs as channel material, the VFEpT exhibited good photoresponse properties with a responsivity of 4.2 × 102 A/W, an external quantum efficiency of 6.4 × 104% and a photodetectivity of 2.1 × 109 Jones at the light irradiance of 36 mW/cm2. Additionally, the VFEpT showed excellent on/off switching with good stability and reproducibility and fast response speed with a short rise time of 12 ms in n-channel operation and 10.6 ms in p-channel operation. These high mobilities, good photoresponse properties and simplistic fabrication of our VFEpTs provided a facile route to the high-performance inorganic photodetectors.

  3. Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation

    Science.gov (United States)

    Witczak, S. C.; King, E. E.; Saks, N. S.; Lacoe, R. C.; Shaneyfelt, M. R.; Hash, G. L.; Hjalmarson, H. P.; Mayer, D. C.

    2002-12-01

    The geometric component of charge pumping current was examined in n-channel metal-oxide-silicon field effect transistors (MOSFETs) following low-temperature irradiation. In addition to the usual dependencies on channel length and gate bias transition time, the geometric component was found to increase with radiation-induced oxide-trapped charge density and decreasing temperature. A postirradiation injection of electrons into the gate oxide reduces the geometric component along with the density of oxide-trapped charge, which clearly demonstrates that the two are correlated. A fit of the injection data to a first-order model for trapping kinetics indicates that the electron trapping occurs predominantly at a single type of Coulomb-attractive trap site. The geometric component results primarily from the bulk recombination of channel electrons that fail to transport to the source or drain during the transition from inversion to accumulation. The radiation response of these transistors suggests that Coulomb scattering by oxide-trapped charge increases the bulk recombination at low temperatures by impeding electron transport. These results imply that the geometric component must be properly accounted for when charge pumping irradiated n-channel MOSFETs at low temperatures.

  4. Study of radiation shielding requirements for n-MOS devices on the Exosat spacecraft. Final report

    International Nuclear Information System (INIS)

    1977-01-01

    The device-degradation and radiation-shielding problems presented by the probable use of an n-channel microprocessor integrated circuit of the 8080 type on the Exosat spacecraft of the European Space Agency, was studied. The radiation exposure likely for this device was calculated, using various assumptions for the amount of surrounding absorber, some being intentional shielding others being normal structure elements and device encapsulation. The conclusion was that this type of device could be used if careful engineering design and quality control were used. Mission doses vary between 5000 and 800 rads for various configurations and some patterns of MOS device will tolerate these doses. The use of specially thickened module covers was not recommended, a better method being upgrading device quality and applying internal (local) shielding when necessary and possibly modular addition of external plates in specific directions only. The result of this shielding philosophy would be much greater efficiency in weight use. The further development of a rads (reduction) per gram philosophy was strongly recommended. Throughout, the strong link between mission success and the choice (and control) of the correct MOS manufacturing technology is emphasized and some guidelines on control of manufactured MOS parts (n-channel and complementary type) with respect to tolerance to radiation are given

  5. On the Production of Superheavy Elements

    CERN Document Server

    Armbruster, P

    2003-01-01

    Since the discovery of Deformed Superheavy Nuclei (1983–85) a bridge connects the island of SHE to known isotopes of lighter elements. What we know experimentally and theoretically on the nuclear structure of SHE is reported in a first section. The making of the elements, with an analysis of production cross sections, and the macroscopic limitation to Z=112+ is presented in a second section. The break-down of fusion cross sections in the ‘Coulomb Falls’ within a range of about 10 elements is introduced as the universal limiting phenomenon. How the nuclear structure of the collision partners modifies the on-set of this limitation is presented in Section 3. Reactions induced by deformed nuclei are pushed by side collisions to higher excitation energies (4n- and 5n-channels), whereas reactions driven by the cluster-like, closed-shell nuclei, 208126Pb and 13882Ba, are kept at low excitation energies (1n- and 2n-channels). The on-set of production limitation for deformed collision partners is moved to smalle...

  6. Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications.

    Science.gov (United States)

    Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

    2017-02-20

    Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and V B .

  7. Assessment of Durable SiC JFET Technology for +600 C to -125 C Integrated Circuit Operation

    Science.gov (United States)

    Neudeck, P. G.; Krasowski, M. J.; Prokop, N. F.

    2011-01-01

    Electrical characteristics and circuit design considerations for prototype 6H-SiC JFET integrated circuits (ICs) operating over the broad temperature range of -125 C to +600 C are described. Strategic implementation of circuits with transistors and resistors in the same 6H-SiC n-channel layer enabled ICs with nearly temperature-independent functionality to be achieved. The frequency performance of the circuits declined at temperatures increasingly below or above room temperature, roughly corresponding to the change in 6H-SiC n-channel resistance arising from incomplete carrier ionization at low temperature and decreased electron mobility at high temperature. In addition to very broad temperature functionality, these simple digital and analog demonstration integrated circuits successfully operated with little change in functional characteristics over the course of thousands of hours at 500 C before experiencing interconnect-related failures. With appropriate further development, these initial results establish a new technology foundation for realizing durable 500 C ICs for combustion engine sensing and control, deep-well drilling, and other harsh-environment applications.

  8. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  9. Strained Si channel NMOSFETs using a stress field with Si1-yC y source and drain stressors

    International Nuclear Information System (INIS)

    Chang, S.T.; Tasi, H.-S.; Kung, C.Y.

    2006-01-01

    The strain field in the silicon channel of a metal-oxide-semiconductor transistor with silicon-carbon alloy source and drain stressors was evaluated using the commercial process simulator FLOOPS-ISE TM . The physical origin of the strain components in the transistor channel region was explained. The magnitude and distribution of the strain components, and their dependence on device design parameters such as the spacing L G between the silicon-carbon alloy stressors, the carbon mole fraction in the stressors and stressor depth were investigated. Reducing the stressor spacing L G or increasing the carbon mole fraction in the stressors and stressor depth increases the magnitude of the vertical compressive stress and the lateral tensile stress in the portion of the N channel region where the inversion charge resides. This is beneficial for improving the electron mobility in n-channel metal-oxide-semiconductor transistors. A simple guiding principle for an optimum combination of the above-mentioned device design parameters in terms of mobility enhancement, drain current enhancement and the tradeoff consideration for junction leakage current degradation

  10. Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

    Directory of Open Access Journals (Sweden)

    J. B. Kim

    2012-03-01

    Full Text Available We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film transistors (TFTs with bi-layer gate dielectrics formed from an amorphous layer of a fluoropolymer (CYTOP and a high-k layer of Al2O3. The p- and n- channel TFTs show saturation mobility values of 0.1 ± 0.01 and 5.0 ± 0.5 cm2/Vs, respectively. The individual transistors show high electrical stability with less than 6% drain-to-source current variations after 1 h direct current (DC bias stress. Complementary inverters yield hysteresis-free voltage transfer characteristics for forward and reverse input biases with static DC gain values larger than 45 V/V at 8 V before and after being subjected to different conditions of electrical stress. Small and reversible variations of the switching threshold voltage of the inverters during these stress tests are compatible with the observed stability of the individual TFTs.

  11. A novel charge pump drive circuit for power MOSFETs

    International Nuclear Information System (INIS)

    Wang Songlin; Zhou Bo; Wang Hui; Guo Wangrui; Ye Qiang

    2010-01-01

    Novel improved power metal oxide semiconductor field effect transistor (MOSFET) drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6 μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW. (semiconductor integrated circuits)

  12. Schottky barrier MOSFET systems and fabrication thereof

    Science.gov (United States)

    Welch, J.D.

    1997-09-02

    (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

  13. Reevaluating the worst-case radiation response of MOS transistors

    Science.gov (United States)

    Fleetwood, D. M.

    Predicting worst-case response of a semiconductor device to ionizing radiation is a formidable challenge. As processes change and MOS gate insulators become thinner in advanced VLSI and VHSIC technologies, failure mechanisms must be constantly re-examined. Results are presented of a recent study in which more than 100 MOS transistors were monitored for up to 300 days after Co-60 exposure. Based on these results, a reevaluation of worst-case n-channel transistor response (most positive threshold voltage shift) in low-dose-rate and postirradiation environments is required in many cases. It is shown for Sandia hardened n-channel transistors with a 32 nm gate oxide, that switching from zero-volt bias, held during the entire radiation period, to positive bias during anneal clearly leads to a more positive threshold voltage shift (and thus the slowest circuit response) after Co-60 exposure than the standard case of maintaining positive bias during irradiation and anneal. It is concluded that irradiating these kinds of transistors with zero-volt bias, and annealing with positive bias, leads to worst-case postirradiation response. For commercial devices (with few interface states at doses of interest), on the other hand, device response only improves postirradiation, and worst-case response (in terms of device leakage) is for devices irradiated under positive bias and annealed with zero-volts bias.

  14. High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2015-01-01

    Full Text Available A novel enhancement-mode (E-mode Metal-Insulator-Semiconductor- (MIS- HEMT with selective fluorine ion (F− treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT. First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV. Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID. Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT, SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat by 28%.

  15. High-current and low acceleration voltage arsenic ion implanted polysilicon-gate and source-drain electrode Si mos transistor

    International Nuclear Information System (INIS)

    Saito, Yasuyuki; Sugimura, Yoshiro; Sugihara, Michiyuki

    1993-01-01

    The fabrication process of high current arsenic (As) ion implanted polysilicon (Si) gate and source drain (SD) electrode Si n-channel metal oxide-semiconductor field effect transistor (MOSFET) was examined. Poly Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose As implanted poly Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique, the n-channel Poly Si gate (ρs = ≅100Ω/□) enhancement MQSFETs(ρs source drain = ≅50Ω/□, SiO 2 gate=380 angstrom) with off-leak-less were obtained on 3 inch Czochralski grown 2Ωcm boron doped p type wafers (Osaka titanium). By the same process, a 8 bit single chip μ-processor with 26MHz full operation was performed

  16. Observations of the Kondo effect and its coexistence with ferromagnetism in a magnetically undoped metal oxide nanostructure

    Science.gov (United States)

    Sapkota, Keshab R.; Maloney, F. Scott; Wang, Wenyong

    2018-04-01

    In this work, we report unusual observations of Kondo effect and coexistence of Kondo effect and ferromagnetism in indium tin oxide (ITO) nanowires that were synthesized without incorporating any magnetic impurities. The temperature-dependent resistivity (ρ -T ) data exhibited an upturn below 80 K and then tended to saturate below 10 K. The ρ -T and magnetoresistance data were analyzed using the n -channel Kondo model, and from the obtained values of S =1 and n ˜1 , the nanowires were expected to be an underscreened Kondo system. A model was also proposed to explain the formation of localized S =1 spin centers in the ITO nanowires. This work could provide insights into the understanding of spin-related novel phenomena in metal oxide nanostructures.

  17. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    Science.gov (United States)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  18. A double-gate double-feedback JFET charge-sensitive preamplifier

    International Nuclear Information System (INIS)

    Fazzi, A.

    1996-01-01

    A new charge-sensitive preamplifier (CSP) without a physical resistance in the feedback is presented. The input device has to be a double-gate JFET. In this new preamplifier configuration the feedback capacitor is continuously discharged by means of a second DC current feedback loop closed through the bottom gate of the input JFET. The top gate-channel junction works as usual in reverse bias, the bottom gate-channel is forward biased. A fraction of the current injected by the bottom gate reaches the top gate discharging the feedback capacitor. The n-channel double-gate JFET is considered from the viewpoint of the restoring action as a parasitic p-n-p ''transversal'' bipolar junction transistor. The new preamplifier is also suited for detectors operating at room temperature with leakage current which may vary with time. The DC behaviour and the dynamic behaviour of the circuit is analyzed and new measurements presented. (orig.)

  19. The extraction of φ-N total cross section from d(γ,pK+K-)n

    International Nuclear Information System (INIS)

    Qian, X.; Chen, W.; Gao, H.; Hicks, K.; Kramer, K.; Laget, J.M.; Mibe, T.; Stepanyan, S.; Tedeschi, D.J.; Xu, W.; Adhikari, K.P.; Amaryan, M.; Anghinolfi, M.; Baghdasaryan, H.; Ball, J.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Bellis, M.; Biselli, A.S.

    2009-01-01

    We report on the first measurement of the differential cross section of φ-meson photoproduction for the d(γ,pK + K - )n exclusive reaction channel. The experiment was performed using a tagged-photon beam and the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson Lab. A combined analysis using data from the d(γ,pK + K - )n channel and those from a previous publication on coherent φ production on the deuteron has been carried out to extract the φ-N total cross section, σ φN . The extracted φ-N total cross section favors a value above 20 mb. This value is larger than the value extracted using vector-meson dominance models for φ photoproduction on the proton.

  20. Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

    Science.gov (United States)

    Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

    2017-04-01

    A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

  1. Transition-metal-doped group-IV monochalcogenides: a combination of two-dimensional triferroics and diluted magnetic semiconductors

    Science.gov (United States)

    Yang, Liu; Wu, Menghao; Yao, Kailun

    2018-05-01

    We report the first-principles evidence of a series of two-dimensional triferroics (ferromagnetic + ferroelectric + ferroelastic), which can be obtained by doping transition-metal ions in group-IV monochalcogenide (SnS, SnSe, GeS, GeSe) monolayers, noting that a ferromagnetic Fe-doped SnS2 monolayer has recently been realized (Li B et al 2017 Nat. Commun. 8 1958). The ferroelectricity, ferroelasticity and ferromagnetism can be coupled and the magnetization direction may be switched upon ferroelectric/ferroelastic switching, rendering electrical writing + magnetic reading possible. They can be also two-dimensional half-metals or diluted magnetic semiconductors, where p/n channels or even multiferroic tunneling junctions can be designed by variation in doping and incorporated into a monolayer wafer.

  2. Beta decay of 30Na: experiment and theory

    International Nuclear Information System (INIS)

    Baumann, P.; Dessagne, P.; Huck, A.; Klotz, A.; Knipper, A.; Miehe, C.; Ramdane, M.; Walter, G.; Marguier, G.; Poves, A.

    1988-01-01

    The 30 Na β decay was studied on-line by means of mass-separation techniques. Gamma-ray, gamma-gamma, neutron-gamma spectra, neutron time-of-flight singles and γ-coincidence measurements, were registered. High-energy neutron branches (E n >2 MeV) were found complementing previouly reported data. A 30 Na β-decay scheme to 30 Mg bound and unbound states is established. The distribution of the transition strength as a function of the excitation energy for particle-unbound levels in 30 Mg is compared to shell-model calculations performed in the 0-12 MeV excitation energy range. An overall renormalization yields a B(GT) quenching factor of 0.28 substantially lower than generally observed in this mass region. Three levels in 29 Mg which are strongly populated via the 1n-channel are related to negative parity intruder states

  3. Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

    Science.gov (United States)

    Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark

    2017-10-01

    Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.

  4. Modeling of MOS radiation and post irradiation effects

    International Nuclear Information System (INIS)

    Neamen, D.A.

    1984-01-01

    The radiation response and long term recovery effects in a n-channel MOSFET due to a pulse of ionizing radiation were modeled assuming that electron tunneling from the semiconductor into the oxide and the buildup of interface states were the postirradiation recovery mechanisms. The modeling used convolution theory and took into account the effects of bias changes during the recovery period and charge yield effects. Changing the bias condition during the post-irradiation recovery period changed the recovery rate. The charge yield effects changed the density of trapped positive charge in the oxide but did not change the recovery characteristics for a given oxide thickness. The modeling results were compared to previous experimental results

  5. Microscopic description of the continuos and discrete spectra of a four nucleon system within the limits of the collective adiabatic approach

    International Nuclear Information System (INIS)

    Gorbatov, A.M.; Germanov, A.V.; Nechaev, D.V.; Kpmarov, P.V.; Nikishov, P.Yu.

    2000-01-01

    The four-nucleon system with internal motion energy below the D+p+n channel threshold energy is considered. The wave function is plotted with an account of the asymptotics of the D+D, p+ 3 H and n+ 3 H open binary channels. All configurational integrals are exactly accounted for the Pauli principle, whereof a new generator of random wanderings on the hypersphere, controlling the hyper-radius of separate fragments is applied. Special attention is paid to the process of inelastic collisions of two deuterons: D+D → n+ 3 H and D+D → p+ 3 H. The experimental difference of these two mirror reactions is well reproduced by low energy of colliding deuterons E D [ru

  6. Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

    Science.gov (United States)

    Brucker, G. J.; Van Gunten, O.; Stassinopoulos, E. G.; Shapiro, P.; August, L. S.; Jordan, T. M.

    1983-01-01

    This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

  7. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  8. p anti p atom spectroscopy

    International Nuclear Information System (INIS)

    Kerbikov, B.O.

    1980-01-01

    A detailed investigation of the nuclear shifts of p anti p atom s levels is presented. The problem is discussed within the framework of a simple model assuming the existence of such an interaction radius R that strong interaction may be neglected for the range r>R and the Coulomb one for the range r< R. The analytic structure of the S matrix is taken into account. It is shown that the protonium spectrum may be completely rearranged due to the interaction in n anti n channel. A procedure has been developed for the localization of the instability domains of the multichannel system spectrum. The data on the nuclear shifts do not allow qualitative predictions on the position of the nuclear-like state near the threshold

  9. Design of monolithic preamplifiers employing diffused n-JFETs for ionization chamber colorimeters

    International Nuclear Information System (INIS)

    Demicheli, M.; Manfredi, P.F.; Speziali, V.; Radeka, V.; Rescia, S.

    1990-01-01

    Silicon n-channel JFETs obtained by diffusing the gate into the epitaxial layer which contains the channel still feature unsurpassed noise performances in charge measurements with radiation detectors. Compared to implanted-gate junction field-effect devices, they have a better behaviour in the low-frequency noise, while the thermal noise in the channel more closely conforms to the expected g m -dependence. With respect to MOSFETs they feature, besides lower noise, superior radiation hardness and resistance to electrostatic discharges into the gate. The actual paper discusses the basic design considerations of a preamplifier for ionization chamber calorimeters, which is intended for monolithic integration based on a dielectrically isolated process. (orig.)

  10. Rotational structures in 174Ta

    International Nuclear Information System (INIS)

    Hojman, Daniel; Kreiner, A.J.; Davidson, Miguel

    1989-01-01

    The nucleus 174 Ta has been studied for the first time through the fusion-evaporation reaction 169 Tm ( 9 Be,4n) using a 4 mg/cm 2 self-supporting Tm foil in the 40 to 65 MeV bombarding energy range (the 4n channel was found to peak at 50 MeV). The experiments comprised γ and X-ray singles in beam and activity spectra, γ-γ-t coincidences (one of the counters was Compton suppressed) and γ-ray angular distributions. The results obtained allowed the construction of a high-spin level scheme. This scheme, which resembles that of 172 Ta, comprises several rotational bands which correspond to different couplings of the valence nucleons. One of these structures, the doubly decoupled band (DDB), is particularly interesting because it is the first observed case of a DDB based on an I π =3 + state. (Author) [es

  11. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  12. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat; Dogan, Fatih; Kum, Hyun; Manchon, Aurelien; Bhattacharya, Pallab

    2012-01-01

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  13. Contribution to the study of πN → π1π2N reactions with creation of an intermediate N*3/2(1236) isobar from 0.4 to 1.5 GeV

    International Nuclear Information System (INIS)

    Merlo, J.P.

    1976-01-01

    The one pion production reaction π + p → π + pπ 0 has been studied up to 1.5 GeV. The π 0 angular distribution measured by counter techniques has been compared to bubble chamber data. Angular distributions are interpreted in the hypothesis of formation of the intermediate N * 3/2 (1236) isobar. Angular distributions for isobar production and decay in one pion production reactions πN → π 1 N * (N * → π 2 N], are calculated in chapter II. π + p → π + pπ 0 experimental results are reported and analyzed in chapter III. An estimation of the pion-isobar partial wave amplitudes in reaction π + p → π 0 N *++ 3/2 (1236) has been tempted. Comparison with π + p phase shift analyses is made. Bubble chamber data for π - p → π - π + n channel are presented at the end of chapter III. (author) [fr

  14. Contribution to the study of πN→π1π2N reactions with creation of an intermediate N*sub(3/2) (1236) isobare from 0.4 to 1.5 GeV

    International Nuclear Information System (INIS)

    Merlo, J.P.

    1976-10-01

    The one pion production reaction π + p→π + pπ 0 has been studied up to 1.5 GeV. The π 0 angular distribution measured by counter techniques has been compared to bubble chamber data. Angular distributions are interpreted in the hypothesis of formation of the intermediate N*sub(3/2) (1236) isobar. Angular distributions for isobar production and decay in one pion production reactions πN→π 1 N* (N*→π 2 N) are calculated. π + p→π + pπ 0 experimental results are reported and analyzed. An estimation of the pion-isobar partial wave amplitudes in reaction π + p→π 0 N*sub(3/2)sup(++) (1236) has been tempted. Comparison with π + p phase shift analyses is made. Bubble chamber data for π - p→π - π + n channel are presented [fr

  15. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  16. A quark model of baryons with natural flavor

    International Nuclear Information System (INIS)

    Forsyth, C.P.; Cutkowsky, R.E.

    1983-01-01

    We have fitted the masses and elastic widths of the S=0 baryons in the context of the QCD-improved quark shell model. All states in the N=0, 1, 2 and 3 harmonic oscillator bands have been included. Three models for the decay of these states have been studied, and it is concluded that the usual spectator model for the decays must be modified. Many resonances in the N=2 and 3 bands were found to decouple from the πN channel, supporting a previous solution to the missing resonance puzzle. No evidence has been found for the tensor force, while conflicting data exist for the 3-body spin orbit term. We also have found evidence that the contact force varies with band. The (56,1 - ) multiplet is lower than expected. (orig.)

  17. High-spin states in 82Sr

    International Nuclear Information System (INIS)

    Baktash, C.; Halper, M.L.; Garcia Bermudez, G.J.

    1989-01-01

    As recent theoretical calculations that predicted the onset of superdeformation in the A ≅ 80 region, the 52 Cr( 34 S,2p2n) reaction at 130 MeV beam energy was employed to populate the high-spin states in 82 Sr. The detection system consisted of the ORNL Compton-Suppression Spectrometer System (18 Ge detectors), the Spin Spectrometer, and the 4 φ CsI Dwarf Ball of Washington University. Off-line analysis of the proton-gated data resulted in nearly 170 million Ge-Ge pairs, which were mostly due to the 2p2n channel. A decay scheme extending to spin I=27h has been established. No strong evidence for the presence of superdeformed states in 82 Sr was found in a preliminary analysis of the data. (Author) [es

  18. Measurement of spectrometric magnet field of EXCHARM setup

    International Nuclear Information System (INIS)

    Aleev, A.N.; Balandin, V.P.; Bordyukov, A.A.

    1998-01-01

    The EXCHARM spectrometer is used for studying charm, strange and exotic hadrons. It is located at the neutron 5N channel of U-70 accelerator (Protvino). The EXCHARM dipole magnet has external size 4.486 x 3.196 x 3.058 m 3 with aperture 2.74 x 0.489 m 2 . The field measurement was made by three-component Hall magnetometer on-line computer in measurement region 2.40 x 0.32 x 3.78 m 3 . The apparatus and methods of the field measuring are described. The results of the measurements of the magnetic field are presented. The estimation of the measurement precision is given. (author)

  19. Ultracompact multiway beam splitters using multiple coupled photonic crystal waveguides

    International Nuclear Information System (INIS)

    Yu Tianbao; Zhou Haifeng; Yang Jianyi; Jiang Xiaoqing; Wang Minghua; Gong Zhao

    2008-01-01

    Ultracompact 1 x N (N > 2) beam splitters based on coupling of multiple photonic crystal waveguides (PCWs) are numerically demonstrated. The operation of the devices is on the basis of the self-imaging phenomenon. Variation of the effective index of modified rods induces the transverse redistribution of the N-fold images with the same coupling length, and uniform or free splitting can be achieved. The devices with three and four output channels are discussed in details as examples. Results show that this kind of beam splitters are very short. At the operating wavelength of 1.55 μm, the splitting length of the devices is only 35 μm even if the output channel number reaches 20. It provides a new method and a compact model to export freely the beam to N channels in PCW devices and can find practical applications in future photonic integrated circuits

  20. Ultracompact multiway beam splitters using multiple coupled photonic crystal waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Yu Tianbao; Zhou Haifeng; Yang Jianyi; Jiang Xiaoqing; Wang Minghua [Department of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou (China); Gong Zhao [Zhejiang University City College, 310027 Hangzhou (China)

    2008-05-07

    Ultracompact 1 x N (N > 2) beam splitters based on coupling of multiple photonic crystal waveguides (PCWs) are numerically demonstrated. The operation of the devices is on the basis of the self-imaging phenomenon. Variation of the effective index of modified rods induces the transverse redistribution of the N-fold images with the same coupling length, and uniform or free splitting can be achieved. The devices with three and four output channels are discussed in details as examples. Results show that this kind of beam splitters are very short. At the operating wavelength of 1.55 {mu}m, the splitting length of the devices is only 35 {mu}m even if the output channel number reaches 20. It provides a new method and a compact model to export freely the beam to N channels in PCW devices and can find practical applications in future photonic integrated circuits.

  1. Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

    International Nuclear Information System (INIS)

    Lei Xiao-Yi; Liu Hong-Xia; Zhang Yue; Ma Xiao-Hua; Hao Yue

    2014-01-01

    The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

    Science.gov (United States)

    Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

    2018-04-01

    In this work, we extend our analytical compact model for nanoscale junctionless triple-gate (JL TG) MOSFETs, capturing carrier transport from drift-diffusion to quasi-ballistic regime. This is based on a simple formulation of the low-field mobility extracted from experimental data using the Y-function method, taking into account the ballistic carrier motion and an increased carrier scattering in process-induced defects near the source/drain regions. The case of a Schottky junction in non-ideal ohmic contact at the drain side was also taken into account by modifying the threshold voltage and ideality factor of the JL transistor. The model is validated with experimental data for n-channel JL TG MOSFETs with channel length varying from 95 down to 25 nm. It can be easily implemented as a compact model for use in Spice circuit simulators.

  3. Simulation of vanadium-48 production using MCNPX code

    Directory of Open Access Journals (Sweden)

    Sadeghi Mahdi

    2012-01-01

    Full Text Available Vanadium-48 was produced through the irradiation of the natural titanium target via the natTi(p, xn48V reaction. The titanium target was irradiated at 1 mA current and by a 21 MeV proton beam for 4 hours. In this paper, the activity of 48V, 43Sc, and 46Sc radionuclides and the efficacy of the 47Ti(p, g, 48Ti(p, n, and 49Ti(p, 2n channel reactions to form 48V radionuclide were determined using MCNPX code. Furthermore, the experimental activity of 48V was compared with the estimated value for the thick target yield produced in the irradiation time according to MCNPX code. Good agreement between production yield of the 48V and the simulation yield was observed. In conclusion, MCNPX code can be used for the estimation of the production yield.

  4. Observation of high-lying resonances in the H- ion

    International Nuclear Information System (INIS)

    Harris, P.G.; New Mexico Univ., Albuquerque, NM

    1990-05-01

    This dissertation reports the observation of several series of resonances, for which both electrons are in excited states, in the photodetachment cross section of H - . These 1 P doubly-excited states interfere with the continuum in which they are embedded, and appear as dips in the production cross section of excited neutral hydrogen. The experiment was performed by intersecting an 800 MeV H - beam with a (266 nm) laser beam at varying angles; the relativistic Doppler shift then ''tuned'' the photon energy in the barycentric frame. The process was observed by using a magnet strong enough the strip the electrons from the excited hydrogen atoms in selected states n and detecting the resulting protons, which allowed the isolation of the individual n channels. Three resonances are clearly visible in each channel. The data support recent theoretical calculations for the positions of doubly-excited 1 P resonances, and verify a new Rydberg-like formula for the modified Coulomb potential

  5. Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

    Science.gov (United States)

    Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

    2001-01-01

    A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

  6. Cryogenic readout integrated circuits for submillimeter-wave camera

    International Nuclear Information System (INIS)

    Nagata, H.; Kobayashi, J.; Matsuo, H.; Akiba, M.; Fujiwara, M.

    2006-01-01

    The development of cryogenic readout circuits for Superconducting Tunneling Junction (Sj) direct detectors for submillimeter wave is presented. A SONY n-channel depletion-mode GaAs Junction Field Effect Transistor (JFET) is a candidate for circuit elements of the preamplifier. We measured electrical characteristics of the GaAs JFETs in the temperature range between 0.3 and 4.2K, and found that the GaAs JFETs work with low power consumption of a few microwatts, and show good current-voltage characteristics without cryogenic anomalies such as kink phenomena or hysteresis behaviors. Furthermore, measurements at 0.3K show that the input referred noise is as low as 0.6μV/Hz at 1Hz. Based on these results and noise calculations, we estimate that a Capacitive Transimpedance Amplifier with the GaAs JFETs will have low noise and STJ detectors will operate below background noise limit

  7. Cryogenic readout integrated circuits for submillimeter-wave camera

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, H. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan) and National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan)]. E-mail: hirohisa.nagata@nao.ac.jp; Kobayashi, J. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); The Graduate University for Advanced Studies, Shonan Village, Hayama, Kanagawa 240-0193 (Japan); Matsuo, H. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Akiba, M. [National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795 (Japan); Fujiwara, M. [National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795 (Japan)

    2006-04-15

    The development of cryogenic readout circuits for Superconducting Tunneling Junction (Sj) direct detectors for submillimeter wave is presented. A SONY n-channel depletion-mode GaAs Junction Field Effect Transistor (JFET) is a candidate for circuit elements of the preamplifier. We measured electrical characteristics of the GaAs JFETs in the temperature range between 0.3 and 4.2K, and found that the GaAs JFETs work with low power consumption of a few microwatts, and show good current-voltage characteristics without cryogenic anomalies such as kink phenomena or hysteresis behaviors. Furthermore, measurements at 0.3K show that the input referred noise is as low as 0.6{mu}V/Hz at 1Hz. Based on these results and noise calculations, we estimate that a Capacitive Transimpedance Amplifier with the GaAs JFETs will have low noise and STJ detectors will operate below background noise limit.

  8. Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

    Science.gov (United States)

    Kawasaki, Naoko; Nagano, Takayuki; Kubozono, Yoshihiro; Sako, Yuuki; Morimoto, Yu; Takaguchi, Yutaka; Fujiwara, Akihiko; Chu, Chih-Chien; Imae, Toyoko

    2007-12-01

    Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10-3cm2V-1s-1 at 300K, whose value is twice as high as that (1.4×10-3cm2V-1s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π-conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

  9. Vortex-slip transitions in superconducting a-NbGe mesoscopic channels

    Science.gov (United States)

    Kokubo, N.; Sorop, T. G.; Besseling, R.; Kes, P. H.

    2006-06-01

    Intriguing and novel physical aspects related to the vortex flow dynamics have been recently observed in mesoscopic channel devices of a-NbGe with NbN channel edges. In this work we have systematically studied the flow properties of vortices confined in such mesoscopic channels as a function of the magnetic field history, using dc-transport and mode-locking (ML) measurements. As opposed to the field-down situation, in the field-up case a kink anomaly in the dc I-V curves is detected. The mode-locking measurements reveal that this anomaly is, in fact, a flow induced vortex slip transition: by increasing the external drive (either dc or ac) a sudden change occurs from n to n+2 moving vortex rows in the channel. The observed features can be explained in terms of an interplay between field focusing due to screening currents and a change in the predominant pinning mechanism.

  10. Nanowire NMOS Logic Inverter Characterization.

    Science.gov (United States)

    Hashim, Yasir

    2016-06-01

    This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In this research two circuit configuration of NW-NMOS inverter was studied, in first NW-NMOS circuit, the noise margin for (low input-high output) condition was very low. For second NMOS circuit gives excellent noise margins, and results indicate that optimization depends on applied voltage to the inverter. Increasing gate to source voltage with (2/1) nanowires ratio results better noise margins. Increasing of applied DC load transistor voltage tends to increasing in decreasing noise margins; decreasing this voltage will improve noise margins significantly.

  11. Liquid-chromatographic determination of sarafloxacin residues in channel catfish muscle-tissue

    Science.gov (United States)

    Meinertz, J.R.; Dawson, V.K.; Gingerich, W.H.; Cheng, B.; Tubergen, M.M.

    1994-01-01

    A liquid chromatographic method is described for the determination of sarafloxacin hydrochloride residues i n channel catfish (ictalurus punctatus) fillets. Sarafloxacin was extracted from fillet tissue with acetonitrile=water (1 + 1). The extract was centrifuged and the supernatant was partitioned with hexane. The aqueous fraction was filtered through a 0.45 Mum filter and evaporated to dryness. The sample was redissolved with 20% acetonitrile-methanol (3 + 2) and 80% trifluoroacetic acid (0.1%), Centrifuged, and filtered to remove proteins. Samples were analyzed by chromatography with gradient elution on a c18 column and with fluorescence detection (excitation at 280 nm and emission above 389 nm). Mean recoveries ranged from 85.4 To 104%, and relative standard deviations ranged from 1.06 To 5.58% In samples spiked at concentrations of 10.0-863.8 Ng/g. The method detection limit for sarafloxacin was 1.4 Ng/g.

  12. Long term ionization response of several BiCMOS VLSIC technologies

    International Nuclear Information System (INIS)

    Pease, R.L.; Combs, W.; Clark, S.

    1992-01-01

    BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. In this paper, the authors examine the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 Krad(Si) for both failure modes in all five technologies

  13. Final state interaction in the pd → pnp reaction at 1 GeV

    International Nuclear Information System (INIS)

    Deloff, A.

    1992-09-01

    The pd → pnp reaction at 1 GeV in both the direct and charge exchange channel has been investigated. The experimental data come from a line reversed beam-target experiment with 3.3 GeV/c deuterons incident on a proton target. In the direct channel data exhibit narrow structures in the np effective mass spectra: at threshold, at 2.02 GeV and at 2.12 GeV which have been seen before and we report on a new narrow enhancement at 1.95 GeV. In charge exchange channel the data show somewhat broader peak at 2.18 GeV. The data are explained by using a conventional approach, i.e. without sub-nucleonic degrees of freedom, but including the ΔN channel in NN scattering. 29 figs., 1 tab., 36 refs. (author)

  14. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat

    2012-07-16

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  15. Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation

    International Nuclear Information System (INIS)

    Lam, H.W.; Pinizzotto, R.F.; Yuan, H.T.; Bellavance, D.W.

    1981-01-01

    By implanting a dose of 6 x 10 17 cm -2 of 32 O 2 + at 300 keV into a silicon wafer, a buried oxide layer is formed. Crystallinity of the silicon layer above the buried oxide layer is maintained by applying a high (>200 0 C) substrate temperature during the ion implantation process. A two-step anneal cycle is found to be adequate to form the insulating buried oxide layer and to repair the implantation damage in the silicon layer on top of the buried oxide. A surface electron mobility as high as 710 cm 2 /Vs has been measured in n-channel MOSFETs fabricated in a 0.5 μm-thick epitaxial layer grown on the buried oxide wafer. A minimum subthreshold current of about 10 pA per micron of channel width at Vsub(DS)=2 V has been measured. (author)

  16. Performance of a 100V Half-Bridge MOSFET Driver, Type MIC4103, Over a Wide Temperature Range

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2011-01-01

    The operation of a high frequency, high voltage MOSFET (metal-oxide semiconductor field-effect transistors) driver was investigated over a wide temperature regime that extended beyond its specified range. The Micrel MIC4103 is a 100V, non-inverting, dual driver that is designed to independently drive both high-side and low-side N-channel MOSFETs. It features fast propagation delay times and can drive 1000 pF load with 10ns rise times and 6 ns fall times [1]. The device consumes very little power, has supply under-voltage protection, and is rated for a -40 C to +125 C junction temperature range. The floating high-side driver of the chip can sustain boost voltages up to 100 V. Table I shows some of the device manufacturer s specification.

  17. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

    2017-11-01

    In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

  18. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  19. Molecular materials for organic field-effect transistors

    International Nuclear Information System (INIS)

    Mori, T

    2008-01-01

    Organic field-effect transistors are important applications of thin films of molecular materials. A variety of materials have been explored for improving the performance of organic transistors. The materials are conventionally classified as p-channel and n-channel, but not only the performance but also even the carrier polarity is greatly dependent on the combinations of organic semiconductors and electrode materials. In this review, particular emphasis is laid on multi-sulfur compounds such as tetrathiafulvalenes and metal dithiolates. These compounds are components of highly conducting materials such as organic superconductors, but are also used in organic transistors. The charge-transfer complexes are used in organic transistors as active layers as well as electrodes. (topical review)

  20. TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters

    CERN Document Server

    Faccio, F; Michelis, S; Faccio, Federico; Fuentes, C; Allongue, B; Sorge, R; Orlandi, S

    2010-01-01

    TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radiation expected for an upgrade to the LHC experiments. TID induces threshold voltage shifts and, in n-channel transistors, source-drain leakage currents. Wide variability in the magnitude of these effects is observed. Displacement damage increases the on-resistance of both vertical and lateral high-voltage transistors. In the latter case, degradation at high particle fluence might lead to a distortion of the output characteristics curve. HBD techniques to limit or eliminate the radiation-induced leakage currents are successfully applied to these high-voltage transistors, but have to be used carefully to avoid consequences on the breakdown voltage.

  1. η production in proton-nucleus reactions

    International Nuclear Information System (INIS)

    Cassing, W.; Batko, G.; Vetter, T.; Wolf, G.

    1991-01-01

    The production of η-mesons in proton-nucleus reactions is analysed with respect to primary nucleon-nucleon (NN→NN η ) and secondary pion-nucleon (πN→ηN) production processes on the basis of Hartree-Fock groundstate momentum distributions and free on-shell production processes. The folding model adopted compares well for meson production with more involved simulations based on VUU transport equations. Similar to K + production in proton-nucleus reactions the η-mesons are primarily produced by the πN→ηN channel. However, η-mesons are absorbed in nuclei via excitation of the N * (1535) resonance which leads to strong distortions of the primordial spectra. On the other hand, the experimental mass dependence of the differential cross sections might yield information about the in-medium properties of this resonance. (orig.)

  2. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  3. The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

    Science.gov (United States)

    Jafar, N.; Soin, N.

    2009-06-01

    This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

  4. Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling

    CERN Document Server

    2016-01-01

    This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life, and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also...

  5. Evidence of a new state in 11Be observed in the 11Li β-decay

    International Nuclear Information System (INIS)

    Madurga, M.; Borge, M.J.G.; Alcorta, M.; Fraile, L.M.; Fynbo, H.O.U.; Jonson, B.; Kirsebom, O.; Martinez-Pinedo, G.; Nilsson, T.; Nyman, G.; Perea, A.; Poves, A.; Riisager, K.; Tengblad, O.; Tengborn, E.; Van der Walle, J.

    2009-01-01

    Coincidences between charged particles emitted in the β-decay of 11 Li were observed using highly segmented detectors. The breakup channels involving three particles were studied in full kinematics allowing for the reconstruction of the excitation energy of the 11 Be states participating in the decay. In particular, the contribution of a previously unobserved state at 16.3 MeV in 11 Be has been identified selecting the α+ 7 He→α+ 6 He+n channel. The angular correlations between the α particle and the center of mass of the 6 He + n system favors spin and parity assignment of 3/2 - for this state as well as for the previously known state at 18 MeV.

  6. Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Navamathavan, R. [Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756 (Korea, Republic of)], E-mail: n_mathavan@yahoo.com; Choi, Chi Kyu [Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756 (Korea, Republic of); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2009-05-05

    We report on enhancement-mode thin film transistors (TFTs) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering at 300 deg. C. The TFT structure consisted of ZnO as a channel, SiN{sub x} as a gate insulator and indium tin oxide (ITO) as a gate which were deposited onto a Corning glass substrate. X-ray diffraction pattern revealed that dense columnar structure of closely packed ZnO nano grains along the c-axis. The transfer characteristics of a typical ZnO TFT exhibited a field effect mobility of 31 cm{sup 2}/V s, a drain current on/off ratio of 10{sup 4}, the low off-current value in the order of 10{sup -10} A, and a threshold voltage of 1.7 V. The transparent ZnO TFT exhibited n-channel enhancement mode behavior.

  7. Radiation-hardened CMOS/SOS LSI circuits

    International Nuclear Information System (INIS)

    Aubuchon, K.G.; Peterson, H.T.; Shumake, D.P.

    1976-01-01

    The recently developed technology for building radiation-hardened CMOS/SOS devices has now been applied to the fabrication of LSI circuits. This paper describes and presents results on three different circuits: an 8-bit adder/subtractor (Al gate), a 256-bit shift register (Si gate), and a polycode generator (Al gate). The 256-bit shift register shows very little degradation after 1 x 10 6 rads (Si), with an increase from 1.9V to 2.9V in minimum operating voltage, a decrease of about 20% in maximum frequency, and little or no change in quiescent current. The p-channel thresholds increase from -0.9V to -1.3V, while the n-channel thresholds decrease from 1.05 to 0.23V, and the n-channel leakage remains below 1nA/mil. Excellent hardening results were also obtained on the polycode generator circuit. Ten circuits were irradiated to 1 x 10 6 rads (Si), and all continued to function well, with an increase in minimum power supply voltage from 2.85V to 5.85V and an increase in quiescent current by a factor of about 2. Similar hardening results were obtained on the 8-bit adder, with the minimum power supply voltage increasing from 2.2V to 4.6V and the add time increasing from 270 to 350 nsec after 1 x 10 6 rads (Si). These results show that large CMOS/SOS circuits can be hardened to above 1 x 10 6 rads (Si) with either the Si gate or Al gate technology. The paper also discusses the relative advantages of the Si gate versus the Al gate technology

  8. Horizontally-connected ZnO-graphene hybrid films for multifunctional devices

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Yi Rang [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Song, Wooseok; Lee, Young Bum; Kim, Seong Ku; Han, Jin Kyu; Myung, Sung; Lee, Sun Sook; An, Ki-Seok [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); Choi, Chel-Jong [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lim, Jongsun, E-mail: jslim@krict.re.kr [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of)

    2016-08-30

    Highlights: • We designed horizontally-connected ZnO and graphene hybrid nanofilms with improved flexibility for multifunctional nanodevices including high performance TFTs. • The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. • The hybrid thin film transistors exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}. - Abstract: Here we designed horizontally-connected ZnO thin films and graphene in order to combine advantages of ZnO thin films, which are high on/off ratio and photo responsivity, and the superior mobility and sensitivity of graphene for applications in thin film transistors (TFTs) and flexible photodetectors. To synthesize the ZnO/graphene hybrid films, a 70-nm-thick ZnO thin film with a uniformly flat surface deposited by the atomic layer deposition process was horizontally connected with highly crystalline monolayer graphene grown by thermal chemical vapor deposition. The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. The hybrid TFT exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}.

  9. Silicon carbide MOSFET integrated circuit technology

    Energy Technology Data Exchange (ETDEWEB)

    Brown, D.M.; Downey, E.; Ghezzo, M.; Kretchmer, J.; Krishnamurthy, V.; Hennessy, W.; Michon, G. [General Electric Co., Schenectady, NY (United States). Corporate Research and Development Center

    1997-07-16

    The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the World`s first SiC analog IC - a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included characterization of the SiC/SiO{sub 2} interface using thermally grown oxides: high temperature (350 C) reliability studies of thermally grown oxides: ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes: epitaxial layer characterization: N channel inversion and depletion mode MOSFETs; device isolation methods and finally integrated circuit design, fabrication and testing of the World`s first monolithic SiC operational amplifier IC. These studies defined a SiC n-channel depletion mode MOSFET IC technology and outlined tasks required to improve all types of SiC devices. For instance, high temperature circuit drift instabilities at 350 C were discovered and characterized. This type of instability needs to be understood and resolved because it affects the high temperature reliability of other types of SiC devices. Improvements in SiC wafer surface quality and the use of deposited oxides instead of thermally grown SiO{sub 2} gate dielectrics will probably be required for enhanced reliability. The slow reverse recovery time exhibited by n{sup +}-p diodes formed by N ion implantation is a problem that needs to be resolved for all types of planar bipolar devices. The reproducibility of acceptor implants needs to be improved before CMOS ICs and many types of power device structures will be manufacturable. (orig.) 51 refs.

  10. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  11. Francisco Guerra (1916-2011), medical historian for the world and Puerto Rico.

    Science.gov (United States)

    Rigau-Pérez, José G

    2012-06-01

    This brief celebration of the work of Francisco Guerra (1916-2011) highlights his role as mentor for an international community, his study of local events in the context of global developments, and his contributions to the understanding of the medical history of Puerto Rico. A selective review of Francisco Guerra's methods and publications shows that his principal works are characterized by their vast scope and exhaustive coverage of ancient and modern published sources, coupled with clarity and conciseness of exposition. At least eight of his books (presented here) provide important information on events and personalities in Puerto Rico up to about 1940. Guerra, through his clinical experience, profound scholarship, and personal contacts, recovered the local medical developments of peripheral areas and incorporated them to a global context.

  12. Nuclear power technology requirements for NASA exploration missions

    International Nuclear Information System (INIS)

    Bloomfield, H.S.

    1990-01-01

    This paper discusses how future exploration of the Moon and Mars will mandate developments in many areas of technology. In particular, major advances will be required in planet surface power systems and space transportation systems. Critical nuclear technology challenges that can enable strategic self-sufficiency, acceptable operational costs and cost-effective space transportation goals for NASA exploration missions have been identified. Critical technologies for surface power systems include stationary and mobile nuclear reactor and radio-isotope heat sources coupled to static and dynamic power conversion devices. These technologies can provide dramatic reductions in mass leading to operational and transportation cost savings. Critical technologies for space transportation systems include nuclear thermal rocket and nuclear electric propulsion options which present compelling concepts for significantly reducing mass, cost or travel time required for Earth-Mars transport

  13. Broadband Microwave Study of Reaction Intermediates and Products Through the Pyrolysis of Oxygenated Biofuels

    Science.gov (United States)

    Abeysekera, Chamara; Hernandez-Castillo, Alicia O.; Fritz, Sean; Zwier, Timothy S.

    2017-06-01

    The rapidly growing list of potential plant-derived biofuels creates a challenge for the scientific community to provide a molecular-scale understanding of their combustion. Development of accurate combustion models rests on a foundation of experimental data on the kinetics and product branching ratios of their individual reaction steps. Therefore, new spectroscopic tools are necessary to selectively detect and characterize fuel components and reactive intermediates generated by pyrolysis and combustion. Substituted furans, including furanic ethers, are considered second-generation biofuel candidates. Following the work of the Ellison group, an 8-18 GHz microwave study was carried out on the unimolecular and bimolecular decomposition of the smallest furanic ether, 2-methoxy furan, and it`s pyrolysis intermediate, the 2-furanyloxy radical, formed in a high-temperature pyrolysis source coupled to a supersonic expansion. Details of the experimental setup and analysis of the spectrum of the radical will be discussed.

  14. Non-Destructive Spent Fuel Characterization with Semiconducting Gallium Arsinde Neutron Imaging Arrays

    International Nuclear Information System (INIS)

    McGregor, Douglas S.; Gersch, Holly K.; Sanders, Jeffrey D.; Lee, John C.; Hammig, Mark D.; Hartman, Michael R.; Yong Hong Yang; Klann, Raymond T.; Elzen, Brian Van Der; Lindsay, John T.; Simpson, Philip A.

    2002-01-01

    High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency

  15. Phototype design and testing of two fiber-optic spectrochemical emission sensors

    International Nuclear Information System (INIS)

    Olsen, K.B.; Nelson, D.A.; Griffin, J.W.; Matson, B.S.; Eschbach, P.A.

    1988-09-01

    A unique radio frequency-induced helium plasma (RFIHP) sensor and a spark discharge (SD) sensor were designed, and prototype units were developed and tested. Both sensors use an atomic excitation source coupled to a fiber-optic cable and optical spectrometer to monitor in situ the emission intensity of selected elements of interest in the ambient air. Potential applications include vadose zone monitoring of volatile species. The RFIHP sensor was designed to measure the total chlorine concentration from carbon tetrachloride (and other volatile chlorinated hydrocarbons), and the SD sensor was designed to measure in situ concentrations of chlorine-containing compounds. The results of this research demonstrate proof of concept of the theory, but suggest further refinements are necessary to achieve detection sensitivities sufficiently low to be useful for monitoring concentrations of selected elements in vadose zone air. 9 refs., 10 figs

  16. Validation of the direct analysis in real time source for use in forensic drug screening.

    Science.gov (United States)

    Steiner, Robert R; Larson, Robyn L

    2009-05-01

    The Direct Analysis in Real Time (DART) ion source is a relatively new mass spectrometry technique that is seeing widespread use in chemical analyses world-wide. DART studies include such diverse topics as analysis of flavors and fragrances, melamine in contaminated dog food, differentiation of writing inks, characterization of solid counterfeit drugs, and as a detector for planar chromatography. Validation of this new technique for the rapid screening of forensic evidence for drugs of abuse, utilizing the DART source coupled to an accurate mass time-of-flight mass spectrometer, was conducted. The study consisted of the determination of the lower limit of detection for the method, determination of selectivity and a comparison of this technique to established analytical protocols. Examples of DART spectra are included. The results of this study have allowed the Virginia Department of Forensic Science to incorporate this new technique into their analysis scheme for the screening of solid dosage forms of drugs of abuse.

  17. Soviet test yields

    Science.gov (United States)

    Vergino, Eileen S.

    Soviet seismologists have published descriptions of 96 nuclear explosions conducted from 1961 through 1972 at the Semipalatinsk test site, in Kazakhstan, central Asia [Bocharov et al., 1989]. With the exception of releasing news about some of their peaceful nuclear explosions (PNEs) the Soviets have never before published such a body of information.To estimate the seismic yield of a nuclear explosion it is necessary to obtain a calibrated magnitude-yield relationship based on events with known yields and with a consistent set of seismic magnitudes. U.S. estimation of Soviet test yields has been done through application of relationships to the Soviet sites based on the U.S. experience at the Nevada Test Site (NTS), making some correction for differences due to attenuation and near-source coupling of seismic waves.

  18. Comparative Evaluation of Pulsewidth Modulation Strategies for Z-Source Neutral-Point-Clamped Inverter

    DEFF Research Database (Denmark)

    Loh, P.C.; Blaabjerg, Frede; Wong, C.P.

    2007-01-01

    modulation (PWM) strategies for controlling the Z-source NPC inverter. While developing the PWM techniques, attention has been devoted to carefully derive them from a common generic basis for improved portability, easier implementation, and most importantly, assisting readers in understanding all concepts......Z-source neutral-point-clamped (NPC) inverter has recently been proposed as an alternative three-level buck-boost power conversion solution with an improved output waveform quality. In principle, the designed Z-source inverter functions by selectively "shooting through" its power sources, coupled...... to the inverter using two unique Z-source impedance networks, to boost the inverter three-level output waveform. Proper modulation of the new inverter would therefore require careful integration of the selective shoot-through process to the basic switching concepts to achieve maximal voltage-boost, minimal...

  19. Identification of long-duration noise transients in LIGO and Virgo

    International Nuclear Information System (INIS)

    Coughlin, Michael W

    2011-01-01

    The LIGO and Virgo detectors are sensitive to a variety of noise sources, such as instrumental artifacts and environmental disturbances. The Stochastic Transient Analysis Multi-detector Pipeline has been developed to search for long-duration (t ≥ 1 s) gravitational-wave (GW) signals. This pipeline can also be used to identify environmental noise transients. Here, we present an algorithm to determine when long-duration noise sources couple into the interferometers, as well as identify what these noise sources are. We analyze the cross-power between a GW strain channel and an environmental sensor, using pattern recognition tools to identify statistically significant structure in cross-power time-frequency maps. We identify interferometer noise from airplanes, helicopters, thunderstorms and other sources. Examples from LIGO's sixth science run, S6, and Virgo's third scientific run, VSR3, are presented. (paper)

  20. Waste resources utilization program. Progress report, period ending 30 June 1975

    International Nuclear Information System (INIS)

    1975-08-01

    Initial progress on the Waste Resources Utilization Program, a joint effort sponsored by ERDA and EPA under the terms of Interagency Agreement E(29-2)-3536/EPA-IAG-D5-0675 is reported. This program has as its objective the use of 134 Cs/ 137 Cs (a potential nuclear reactor ''waste resource'') as a gamma radiation source, coupled with modest heating, to treat sewage sludge (another ''waste resource'') to rid it of pathogenic organisms so that it may be safely used as a fertilizer or a feed supplement for ruminant animals. The potential exists for using at least 50 percent of the by-product cesium from future reactor fuel-rod reprocessing in this one application alone. Activities dealing with research on many aspects of the problem such as pathogen reduction, physical and chemical effects, cost benefit analysis, safety and security, and systems engineering are reported. (U.S.)

  1. Renormalization a la BRS of the non-linear σ-model

    International Nuclear Information System (INIS)

    Blasi, A.; Collina, R.

    1987-01-01

    We characterize the non-linear O(N+1) σ-model in an arbitrary parametrization with a nihilpotent BRS operator obtained from the symmetry transformation by the use of anticommuting parameters. The identity can be made compatible with the presence of a mass term in the model, so we can analyze its stability and prove that the model is anomaly free. This procedure avoids many problems encountered in the conventional analysis; in particular the introduction of an infinite number of sources coupled to the successive variations of the field is not necessary and the linear O(N) symmetry is respected as a consequence of the identity. The approach may provide useful in discussing the renormalizability of a wider class of models with non-linear symmetries. (orig.)

  2. A low-power CMOS frequency synthesizer for GPS receivers

    International Nuclear Information System (INIS)

    Yu Yunfeng; Xiao Shimao; Zhuang Haixiao; Ma Chengyan; Ye Tianchun; Yue Jianlian

    2010-01-01

    A low-power frequency synthesizer for GPS/Galileo L1/E1 band receivers implemented in a 0.18 μm CMOS process is introduced. By adding clock-controlled transistors at latch outputs to reduce the time constant at sensing time, the working frequency of the high-speed source-coupled logic prescaler supplying quadrature local oscillator signals has been increased, compared with traditional prescalers. Measurement results show that this synthesizer achieves an in-band phase noise of -87 dBc/Hz at 15 kHz offset, with spurs less than -65 dBc. The whole synthesizer consumes 6 mA in the case of a 1.8 V supply, and its core area is 0.6 mm 2 . (semiconductor integrated circuits)

  3. Shift Verification and Validation

    Energy Technology Data Exchange (ETDEWEB)

    Pandya, Tara M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Evans, Thomas M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Davidson, Gregory G [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Johnson, Seth R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Godfrey, Andrew T. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-09-07

    This documentation outlines the verification and validation of Shift for the Consortium for Advanced Simulation of Light Water Reactors (CASL). Five main types of problems were used for validation: small criticality benchmark problems; full-core reactor benchmarks for light water reactors; fixed-source coupled neutron-photon dosimetry benchmarks; depletion/burnup benchmarks; and full-core reactor performance benchmarks. We compared Shift results to measured data and other simulated Monte Carlo radiation transport code results, and found very good agreement in a variety of comparison measures. These include prediction of critical eigenvalue, radial and axial pin power distributions, rod worth, leakage spectra, and nuclide inventories over a burn cycle. Based on this validation of Shift, we are confident in Shift to provide reference results for CASL benchmarking.

  4. High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

    Science.gov (United States)

    Tamura, N.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Valek, B.; Bravman, J. C.; Spolenak, R.; Brown, W. L.; Marieb, T.; Fujimoto, H.; Batterman, B. W.; Patel, J. R.

    2002-05-01

    The availability of high brilliance synchrotron sources, coupled with recent progress in achromatic focusing optics and large area two-dimensional detector technology, has allowed us to develop an x-ray synchrotron technique that is capable of mapping orientation and strain/stress in polycrystalline thin films with submicron spatial resolution. To demonstrate the capabilities of this instrument, we have employed it to study the microstructure of aluminum thin film structures at the granular and subgranular levels. Due to the relatively low absorption of x-rays in materials, this technique can be used to study passivated samples, an important advantage over most electron probes given the very different mechanical behavior of buried and unpassivated materials.

  5. Microscanning XRF, Xanes, And XRD Studies Of The decorated Surface Of Roman Terra Sigillata Ceramics

    International Nuclear Information System (INIS)

    Mirguet, C.; Sciau, P.; Goudeau, P.; Mehta, A.; Pianetta, P.; Liu, Z.; Tamura, N.

    2008-01-01

    Different microscanning synchrotron techniques were used to better understand the elaboration process and origins of Terra Sigillata potteries from the Roman period. A mixture Gallic slip sample cross-section showing red and yellow colors was studied. The small (micron) size of the X-ray beam available at Stanford Synchrotron Radiation Laboratory (SSRL) and Advanced Light Source (ALS) synchrotron sources, coupled with the use of a sample scanning stage allowed us to spatially resolve the distribution of the constitutive mineral phases related to the chemical composition. Results show that red color is a result of iron-rich hematite crystals and the yellow part is a result of the presence of Ti-rich rutile-type phase (brookite). Volcanic-type clay is at the origin of these marble Terra Sigillata.

  6. Membrane steam reforming of natural gas for hydrogen production by utilization of medium temperature nuclear reactor

    International Nuclear Information System (INIS)

    Djati Hoesen Salimy

    2010-01-01

    The assessment of steam reforming process with membrane reactor for hydrogen production by utilizing of medium temperature nuclear reactor has been carried out. Difference with the conventional process of natural gas steam reforming that operates at high temperature (800-1000°C), the process with membrane reactor operates at lower temperature (~500°C). This condition is possible because the use of perm-selective membrane that separate product simultaneously in reactor, drive the optimum conversion at the lower temperature. Besides that, membrane reactor also acts the role of separation unit, so the plant will be more compact. From the point of nuclear heat utilization, the low temperature of process opens the chance of medium temperature nuclear reactor utilization as heat source. Couple the medium temperature nuclear reactor with the process give the advantage from the point of saving fossil fuel that give direct implication of decreasing green house gas emission. (author)

  7. High temperature electron beam ion source for the production of single charge ions of most elements of the Periodic Table

    CERN Document Server

    Panteleev, V N; Barzakh, A E; Fedorov, D V; Ivanov, V S; Moroz, F V; Orlov, S Y; Seliverstov, D M; Stroe, L; Tecchio, L B; Volkov, Y M

    2003-01-01

    A new type of a high temperature electron beam ion source (HTEBIS) with a working temperature up to 2500 deg. C was developed for production of single charge ions of practically all elements. Off-line tests and on-line experiments making use of the developed ion source coupled with uranium carbide targets of different density, have been carried out. The ionization efficiency measured for stable atoms of many elements varied in the interval of 1-6%. Using the HTEBIS, the yields and on-line production efficiency of neutron rich isotopes of Mn, Fe, Co, Cu, Rh, Pd, Ag, Cd, In, Sn and isotopes of heavy elements Pb, Bi, Po and some others have been determined. The revealed confinement effect of the ions produced in the narrow electron beam inside a hot ion source cavity has been discussed.

  8. Development of a monoenergetic 1-10 keV neutral lithium beam for the diagnostic of edge plasmas in magnetic confinement devices

    International Nuclear Information System (INIS)

    Ueda, Mario.

    1994-09-01

    Diagnostic of plasmas confined by magnetic fields for fusion research based on neutral lithium beam (NLB) is presently considered to be one of the most appropriate methods to carry out the important measurements of edge density and its fluctuation profiles without plasma perturbation. In this CRP project we proposed the development of an NLB source with 1-10 KeV based on a traditional β-eucryptite surface emission source coupled to a Pierce gun geometry accelerator and subsequent neutralization of the Li + beam by a Li-oven neutralizer. Possible application of such an NLB probe in a medium term (2-3 years) in our country would be in a small RFP in operation and in a low-aspect-ratio tokamak in construction both at LAP/INPE and in other hot plasma devices operating at brazilian universities of Sao Paulo (USP) and Campinas (UNICAMP) with whom we maintain strong collaboration efforts in plasma research. (author). 8 refs

  9. Laser-produced multi-charged heavy ions as efficient soft x-ray sources

    International Nuclear Information System (INIS)

    Higashiguchi, Takeshi; Suzuki, Yuhei; Kawasaki, Masato

    2016-01-01

    We demonstrate EUV and soft x-ray sources in the 2 to 7 nm spectral region related to the beyond EUV (BEUV) question at 6x nm and a water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs), extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on a high-Z plasma UTA source, coupled to x-ray optics. We will discuss the progress and Z-scaling of UTA emission spectra to achieve lab-scale table-top, efficient, high-brightness high-Z plasma EUV-soft x-ray sources for in vivo bio-imaging applications. (author)

  10. Survey of Digital Feedback Systems in High Current Storage Rings

    International Nuclear Information System (INIS)

    Teytelman, Dmitry

    2003-01-01

    In the last decade demand for brightness in synchrotron light sources and luminosity in circular colliders led to construction of multiple high current storage rings. Many of these new machines require feedback systems to achieve design stored beam currents. In the same time frame the rapid advances in the technology of digital signal processing allowed the implementation of these complex feedback systems. In this paper I concentrate on three applications of feedback to storage rings: orbit control in light sources, coupled-bunch instability control, and low-level RF control. Each of these applications is challenging in areas of processing bandwidth, algorithm complexity, and control of time-varying beam and system dynamics. I will review existing implementations as well as comment on promising future directions

  11. Munitions having an insensitive detonator system for initiating large failure diameter explosives

    Science.gov (United States)

    Perry, III, William Leroy

    2015-08-04

    A munition according to a preferred embodiment can include a detonator system having a detonator that is selectively coupled to a microwave source that functions to selectively prime, activate, initiate, and/or sensitize an insensitive explosive material for detonation. The preferred detonator can include an explosive cavity having a barrier within which an insensitive explosive material is disposed and a waveguide coupled to the explosive cavity. The preferred system can further include a microwave source coupled to the waveguide such that microwaves enter the explosive cavity and impinge on the insensitive explosive material to sensitize the explosive material for detonation. In use the preferred embodiments permit the deployment and use of munitions that are maintained in an insensitive state until the actual time of use, thereby substantially preventing unauthorized or unintended detonation thereof.

  12. Insensitive detonator apparatus for initiating large failure diameter explosives

    Science.gov (United States)

    Perry, III, William Leroy

    2015-07-28

    A munition according to a preferred embodiment can include a detonator system having a detonator that is selectively coupled to a microwave source that functions to selectively prime, activate, initiate, and/or sensitize an insensitive explosive material for detonation. The preferred detonator can include an explosive cavity having a barrier within which an insensitive explosive material is disposed and a waveguide coupled to the explosive cavity. The preferred system can further include a microwave source coupled to the waveguide such that microwaves enter the explosive cavity and impinge on the insensitive explosive material to sensitize the explosive material for detonation. In use the preferred embodiments permit the deployment and use of munitions that are maintained in an insensitive state until the actual time of use, thereby substantially preventing unauthorized or unintended detonation thereof.

  13. Power supply instrumentation for pulsed dielectric barrier discharges

    International Nuclear Information System (INIS)

    Quiroz Velázquez, V E; López Callejas, R; De la Piedad Beneitez, A; Rodríguez Méndez, B G; Peña Eguiluz, R; Muñoz Castro, A E; Barocio, S R; Mercado Cabrera, A; Valencia Alvarado, R

    2012-01-01

    The design and implementation of a pulsed high voltage supply intended to the production and control of pulsed dielectric barrier discharges are reported. The instrumentation includes three independently built DC sources coupled to Flyback-like converters using three 1:50 high voltage transformers. The system is capable of supplying voltages up to 70 kV at a 100-2000 Hz repetition rate, delivering 1-500 μs wide pulses. The system has been applied to the development of pulsed dielectric barrier discharges in a stainless steel coaxial reactor 30 cm long and with a 2.54 cm diameter. The inner nickel electrode diameter is 0.005 cm and is embedded in alumina. The discharges have been carried out in room pressure air. Discharges have been implemented. The discharge is made is a water environment for purposes of bacterial elimination.

  14. Calibration of the Large Area X-Ray Proportional Counter (LAXPC) Instrument on board AstroSat

    Energy Technology Data Exchange (ETDEWEB)

    Antia, H. M.; Yadav, J. S.; Chauhan, Jai Verdhan; Chitnis, Varsha; Dedhia, Dhiraj; Shah, Parag; Gujar, V. M.; Katoch, Tilak; Kurhade, V. N.; Madhwani, Pankaj; Manojkumar, T. K.; Nikam, V. A.; Pandya, A. S.; Parmar, J. V.; Pawar, D. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Agrawal, P. C. [UM-DAE Centre of Excellence for Basic Sciences, University of Mumbai, Kalina, Mumbai 400098 (India); Manchanda, R. K. [University of Mumbai, Kalina, Mumbai 400098 (India); Paul, Biswajit [Department of Astronomy and Astrophysics, Raman Research Institute, Bengaluru 560080 (India); Pahari, Mayukh; Misra, Ranjeev [Inter-University Centre for Astronomy and Astrophysics, Pune 411007 (India); and others

    2017-07-01

    We present the calibration and background model for the Large Area X-ray Proportional Counter (LAXPC) detectors on board AstroSat . The LAXPC instrument has three nominally identical detectors to achieve a large collecting area. These detectors are independent of each other, and in the event analysis mode they record the arrival time and energy of each photon that is detected. The detectors have a time resolution of 10 μ s and a dead-time of about 42 μ s. This makes LAXPC ideal for timing studies. The energy resolution and peak channel-to-energy mapping were obtained from calibration on the ground using radioactive sources coupled with GEANT4 simulations of the detectors. The response matrix was further refined from observations of the Crab after launch. At around 20 keV the energy resolution of the detectors is 10%–15%, while the combined effective area of the three detectors is about 6000 cm{sup 2}.

  15. The Muse-4 experiment: measurement of the kinetic parameters of a subcritical system; L'experience MUSE-4: mesure des parametres cinetiques d'un systeme sous-critique

    Energy Technology Data Exchange (ETDEWEB)

    Vollaire, J

    2004-10-01

    Accelerator Driven Systems (ADS) which are based on an external neutron source coupled to a subcritical core, offer advantages for the incineration of radioactive waste. In order to understand the neutronic specificity of such a system, during the MUSE IV experimental program, the experimental reactor MASURCA (CEA Cadarache) has been coupled to the neutrons source GENEPI. This setup has enabled the development of an on-line measurement technique of the effective multiplication factor. This measurement benefits from the characteristics of the reactor response depending on the multiplication factor at the prompt fission and delayed fission time scales. The analysis of those experiments shows that the proposed method give results in agreement with the one deduced using classical reactivity measurement techniques which can not however be used in a power ADS. (author)

  16. Study of polonium isotopes ground state properties by simultaneous atomic- and nuclear-spectroscopy

    CERN Multimedia

    Koester, U H; Kalaninova, Z; Imai, N

    2007-01-01

    We propose to systematically study the ground state properties of neutron deficient $^{192-200}$Po isotopes by means of in-source laser spectroscopy using the ISOLDE laser ion source coupled with nuclear spectroscopy at the detection setup as successfully done before by this collaboration with neutron deficient lead isotopes. The study of the change in mean square charge radii along the polonium isotope chain will give an insight into shape coexistence above the mid-shell N = 104 and above the closed shell Z = 82. The hyperfine structure of the odd isotopes will also allow determination of the nuclear spin and the magnetic moment of the ground state and of any identifiable isomer state. For this study, a standard UC$_{x}$ target with the ISOLDE RILIS is required for 38 shifts.

  17. Filtered cathodic arc source

    International Nuclear Information System (INIS)

    Falabella, S.; Sanders, D.M.

    1994-01-01

    A continuous, cathodic arc ion source coupled to a macro-particle filter capable of separation or elimination of macro-particles from the ion flux produced by cathodic arc discharge is described. The ion source employs an axial magnetic field on a cathode (target) having tapered sides to confine the arc, thereby providing high target material utilization. A bent magnetic field is used to guide the metal ions from the target to the part to be coated. The macro-particle filter consists of two straight solenoids, end to end, but placed at 45 degree to one another, which prevents line-of-sight from the arc spot on the target to the parts to be coated, yet provides a path for ions and electrons to flow, and includes a series of baffles for trapping the macro-particles. 3 figures

  18. Investigation of the dipole response of nickel isotopes in the presence of a high-frequency electromagnetic field

    International Nuclear Information System (INIS)

    Rossi, Dominic M.

    2010-01-01

    The electric dipole response of neutron-rich nickel isotopes has been investigated using the LAND setup at GSI in Darmstadt (Germany). Relativistic secondary beams of 56-57 Ni and 67-72 Ni at approximately 500 AMeV have been generated using projectile fragmentation of stable ions on a 4 g/cm 2 Be target and subsequent separation in the magnetic dipole fields of the FRagment Separator (FRS). After reaching the LAND setup in Cave C, the radioactive ions were excited electromagnetically in the electric field of a Pb target. The decay products have been measured in inverse kinematics using various detectors. Neutron-rich 67-69 Ni isotopes decay by the emission of neutrons, which are detected in the LAND detector. The present analysis concentrates on the (γ,n) and (γ,2n) channels in these nuclei, since the proton and three-neutron thresholds are unlikely to be reached considering the virtual photon spectrum for nickel ions at 500 AMeV. A measurement of the stable 58 Ni isotope is used as a benchmark to check the accuracy of the present results with previously published data. The measured (γ,n) and (γ,np) channels are compared with an inclusive photoneutron measurement by Fultz and coworkers, which are consistent within the respective errors. The measured excitation energy distributions of 67-69 Ni contain a large portion of the Giant Dipole Resonance (GDR) strength predicted by the Thomas-Reiche-Kuhn energy-weighted sum rule, as well as a significant amount of low-lying E1 strength, that cannot be attributed to the GDR alone. The GDR distribution parameters are calculated using well-established semi-empirical systematic models, providing the peak energies and widths. The GDR strength is extracted from the χ 2 minimization of the model GDR to the measured data of the (γ,2n) channel, thereby excluding any influence of eventual low-lying strength. The subtraction of the obtained GDR distribution from the total measured E1 strength provides the low-lying E1 strength

  19. Numerical simulation of seismic wave propagation from land-excited large volume air-gun source

    Science.gov (United States)

    Cao, W.; Zhang, W.

    2017-12-01

    The land-excited large volume air-gun source can be used to study regional underground structures and to detect temporal velocity changes. The air-gun source is characterized by rich low frequency energy (from bubble oscillation, 2-8Hz) and high repeatability. It can be excited in rivers, reservoirs or man-made pool. Numerical simulation of the seismic wave propagation from the air-gun source helps to understand the energy partitioning and characteristics of the waveform records at stations. However, the effective energy recorded at a distance station is from the process of bubble oscillation, which can not be approximated by a single point source. We propose a method to simulate the seismic wave propagation from the land-excited large volume air-gun source by finite difference method. The process can be divided into three parts: bubble oscillation and source coupling, solid-fluid coupling and the propagation in the solid medium. For the first part, the wavelet of the bubble oscillation can be simulated by bubble model. We use wave injection method combining the bubble wavelet with elastic wave equation to achieve the source coupling. Then, the solid-fluid boundary condition is implemented along the water bottom. And the last part is the seismic wave propagation in the solid medium, which can be readily implemented by the finite difference method. Our method can get accuracy waveform of land-excited large volume air-gun source. Based on the above forward modeling technology, we analysis the effect of the excited P wave and the energy of converted S wave due to different water shapes. We study two land-excited large volume air-gun fields, one is Binchuan in Yunnan, and the other is Hutubi in Xinjiang. The station in Binchuan, Yunnan is located in a large irregular reservoir, the waveform records have a clear S wave. Nevertheless, the station in Hutubi, Xinjiang is located in a small man-made pool, the waveform records have very weak S wave. Better understanding of

  20. Estudio de materiales y técnica de ejecución de los restos de pintura mural romana hallados en una excavación arqueológica de Guadix (Granada

    Directory of Open Access Journals (Sweden)

    Ana García Bueno

    2000-01-01

    Full Text Available Este artículo da a conocer unos restos de pintura mural romana encontrados en Guadix, tanto desde el punto de vista arqueológico como analítico. Estos fragmentos de pintura mural constituían parte del material de relleno de una canalización romana, cuya cronología pudo precisarse con exactitud, que posiblemente formaría parte de la red hidráulica de la antigua ACCIS. Ateniéndonos a las características de los fragmentos, se seleccionaron muestras de los colores más frecuentes para determinar los pigmentos utilizados y la técnica de ejecución empleada en su construcción.This article makes Known the remains of Román wall painting found in Guadix, botti fron au archaeological and analytical point of view. These fragments of wall painting constituted part of ttie filling material used in a Román channelling, whose chronology was accurately established, which would probably be part of the hydraulic system in ancient ACCIS. Keeping in mind the characteristics of the fragments, samples of the most frecuent colours were chosen to determine the pigments used and the execution technique employed in its construction.

  1. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  2. The η′N interaction from a chiral effective model and η′-N bound state

    International Nuclear Information System (INIS)

    Sakai, Shuntaro; Jido, Daisuke

    2015-01-01

    The η ′ mass reduction in the nuclear medium is expected owing to the degeneracy of the pseudoscalar-singlet and octet mesons in the restoration of the spontaneous chiral symmetry breaking. In this study, we investigate the η ′ N 2body interaction, which is the fundamental interaction of the in-medium η ′ properties, using the linear sigma model as a chiral effective model. The η ′ N interaction in the linear sigma model comes from the scalar meson exchange with U A (1) symmetry effect and is found to be fairly strong attraction. The transition amplitude of η ′ N to the ηN channel is relatively small compared to that of elastic channel. From the analysis of the η ′ N 2body system, we find a η ′ N bound state with the binding energy 12.3-3.3iMeV. We expect that this strongly attractive two body interaction leads to a deep and attractive optical potential

  3. Scattering of vector mesons off nucleons

    International Nuclear Information System (INIS)

    Lutz, M.F.M.; Friman, B.; Wolf, G.

    2001-12-01

    We construct a relativistic and unitary approach to 'high' energy pion- and photon-nucleon reactions taking the πN, πΔ, ρN, ωN, ηN, K Λ, KΣ final states into account. Our scheme dynamically generates the s- and d-wave nucleon resonances N(1535), N(1650) and N(1520) and isobar resonances Δ(1620) and δ(1700) in terms of quasi-local interaction vertices. The description of photon-induced processes is based on a generalized vector-meson dominance assumption which directly relates the electromagnetic quasi-local 4-point interaction vertices to the corresponding vertices involving the ρ and ω fields. We obtain a satisfactory description of the elastic and inelastic pion- and photon-nucleon scattering data in the channels considered. The resulting s-wave ρ- and ω-nucleon scattering amplitudes are presented. Using these amplitudes we compute the leading density modification of the ρ and ω mass distributions in nuclear matter. We find a repulsive mass shift for the ω meson at small nuclear density but predict considerable strength in resonance-hole like ω-meson modes. Compared to previous calculations our result for the ρ-meson spectral function shows a significantly smaller in-medium effect. This reflects a not too large coupling strength of the N(1520) resonance to the ρN channel. (orig.)

  4. Perhydropolysilazane spin-on dielectrics for inter-layer-dielectric applications of sub-30 nm silicon technology

    International Nuclear Information System (INIS)

    Kim, Sam-Dong; Ko, Pil-Seok; Park, Kyoung-Seok

    2013-01-01

    Various material properties of the perhydropolysilazane spin-on dielectric (PHPS SOD) were examined and analyzed in this study as potential inter-layer dielectrics (ILDs) integrated for Si circuits of 30 nm technology or beyond. The spin-coated PHPS (18.5 wt%) layers converted at 650 °C showed comparable but less perfect thermal conversion to silica than the films converted at 1000 °C, however exhibiting excellent gap filling (15 nm gap opening, aspect ratio (AR) of ∼23) and planarization (degree of planarization (DOP) = ∼73% for 800 nm initial step height, cusp angle = ∼16°) sufficient for the Si integration. PHPS SOD layers cured at 650 °C were integrated ILDs in the 0.18 µm Si front-end-of-the-line process, and the estimated hot-carrier reliability of n-channel metal oxide semiconductor transistors (ten years at a drain voltage of 1.68 V) had no significant difference from that of the transistors integrated with the conventional borophosposilicate glass ILDs. A modified contact pre-cleaning scheme using N 2 O plasma treatment also produced uniform and stable contact chain resistances from the SOD ILDs. (paper)

  5. Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Minsoo, E-mail: minsoo@mosfet.t.u-tokyo.ac.jp; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi

    2014-04-30

    We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al{sub 2}O{sub 3}-based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal–oxide–semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125 mV/dec and lower I{sub ON}/I{sub OFF} ratio of 10{sup 3}–10{sup 4} were obtained. It is expected that these device characteristics can be improved by further process optimization. - Highlights: • Layer by layer growth of Ge • Uniform interface between Ge and the insulator • Gate leakage current and drain current saturation seem to be well controlled. • The output characteristics show good saturation.

  6. Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

    International Nuclear Information System (INIS)

    Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi

    2014-01-01

    We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al 2 O 3 -based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal–oxide–semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125 mV/dec and lower I ON /I OFF ratio of 10 3 –10 4 were obtained. It is expected that these device characteristics can be improved by further process optimization. - Highlights: • Layer by layer growth of Ge • Uniform interface between Ge and the insulator • Gate leakage current and drain current saturation seem to be well controlled. • The output characteristics show good saturation

  7. Asymptotic analysis of the average, steady, isotherml flow in coupled, parallel channels

    International Nuclear Information System (INIS)

    Lund, K.O.

    1976-01-01

    The conservation equations of mass and momentum are derived for the average flow of gases in coupled, parallel channels, or rod bundles. In the case of gas-cooled rod bundles the pitch of the rods is relatively large so the flows in the channels are strongly coupled. From this observation a perturbation parameter is derived and the descriptive equations are scaled using this parameter, which represents the ratio of the axial flow area to the transverse flow area, and which is of the order of 10 -3 in current gas-cooled fast breeder reactor designs. By expanding the velocities into perturbation series the equations for two channels are solved as an initial value problem, and the results compared to a finite difference solution of the same problem. The N-channel problem is solved to the lowest order as a two-point boundary value problem with the pressures specified at the inlet and the outlet. It is concluded from the study that asymptotic methods are effective in solving the flow problems of rod bundles; however, further work is required to evaluate the possible computational advantages of the methods

  8. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  9. (C-V) and y-parameters determination of JFETs under different environmental conditions

    Energy Technology Data Exchange (ETDEWEB)

    El-Ghanam, S.M., E-mail: safaaghanam@yahoo.co [Women' s College for Art, Science and Education, Ain-Shams University, Heliopolis, Cairo (Egypt)

    2010-10-01

    The C-V characteristics of n-channel JFET have been measured under different environmental conditions of temperature up to 140 deg. C and {gamma}-rays up to 100 kGy. For low bias voltage and frequency, the input capacitance, C{sub iss}, is shown to be a direct function of temperature. On the other hand, its value was shown to decrease from 11.68 down to 8.17 nF due to {gamma}-exposure up to 100 kGy. The y-parameters of common source amplifier were calculated under the influence of temperature and {gamma}-rays. The results show that the susceptance component of the admittance increases due to increase in temperature, while decreasing after {gamma}-exposure. Considering the cutoff frequency f{sub T0}, it is clear that as the temperature increases from 30 up to 140 deg. C, f{sub T0} dropped from 47 MHz down to 5 MHz, measured at 0.8 V. On the other hand its value was shown to increase from 43 MHz up to 102 MHz, measured at the same bias voltage, due to {gamma}-exposure up to 100 kGy.

  10. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    Science.gov (United States)

    Song, In-Hyouk; Forfang, William B. D.; Cole, Bryan; You, Byoung Hee

    2014-10-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

  11. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    International Nuclear Information System (INIS)

    Song, In-Hyouk; Forfang, William B D; Cole, Bryan; Hee You, Byoung

    2014-01-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz. (paper)

  12. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    International Nuclear Information System (INIS)

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  13. Super-resolution imaging of ciliary microdomains in isolated olfactory sensory neurons using a custom two-color stimulated emission depletion microscope

    Science.gov (United States)

    Meyer, Stephanie A.; Ozbay, Baris N.; Potcoava, Mariana; Salcedo, Ernesto; Restrepo, Diego; Gibson, Emily A.

    2016-06-01

    We performed stimulated emission depletion (STED) imaging of isolated olfactory sensory neurons (OSNs) using a custom-built microscope. The STED microscope uses a single pulsed laser to excite two separate fluorophores, Atto 590 and Atto 647N. A gated timing circuit combined with temporal interleaving of the different color excitation/STED laser pulses filters the two channel detection and greatly minimizes crosstalk. We quantified the instrument resolution to be ˜81 and ˜44 nm, for the Atto 590 and Atto 647N channels. The spatial separation between the two channels was measured to be under 10 nm, well below the resolution limit. The custom-STED microscope is incorporated onto a commercial research microscope allowing brightfield, differential interference contrast, and epifluorescence imaging on the same field of view. We performed immunolabeling of OSNs in mice to image localization of ciliary membrane proteins involved in olfactory transduction. We imaged Ca2+-permeable cyclic nucleotide gated (CNG) channel (Atto 594) and adenylyl cyclase type III (ACIII) (Atto 647N) in distinct cilia. STED imaging resolved well-separated subdiffraction limited clusters for each protein. We quantified the size of each cluster to have a mean value of 88±48 nm and 124±43 nm, for CNG and ACIII, respectively. STED imaging showed separated clusters that were not resolvable in confocal images.

  14. The importance for speech intelligibility of random fluctuations in "steady" background noise.

    Science.gov (United States)

    Stone, Michael A; Füllgrabe, Christian; Mackinnon, Robert C; Moore, Brian C J

    2011-11-01

    Spectrally shaped steady noise is commonly used as a masker of speech. The effects of inherent random fluctuations in amplitude of such a noise are typically ignored. Here, the importance of these random fluctuations was assessed by comparing two cases. For one, speech was mixed with steady speech-shaped noise and N-channel tone vocoded, a process referred to as signal-domain mixing (SDM); this preserved the random fluctuations of the noise. For the second, the envelope of speech alone was extracted for each vocoder channel and a constant was added corresponding to the root-mean-square value of the noise envelope for that channel. This is referred to as envelope-domain mixing (EDM); it removed the random fluctuations of the noise. Sinusoidally modulated noise and a single talker were also used as backgrounds, with both SDM and EDM. Speech intelligibility was measured for N = 12, 19, and 30, with the target-to-background ratio fixed at -7 dB. For SDM, performance was best for the speech background and worst for the steady noise. For EDM, this pattern was reversed. Intelligibility with steady noise was consistently very poor for SDM, but near-ceiling for EDM, demonstrating that the random fluctuations in steady noise have a large effect.

  15. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

    KAUST Repository

    Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Li, Ming-Yang; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L.; Lan, Yann-Wen

    2017-01-01

    High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.

  16. The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

    International Nuclear Information System (INIS)

    Lee, Sunghwan; Park, Hongsik; Paine, David C.

    2012-01-01

    The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μ FE ) of 20 ± 1.9 cm 2 /Vs and similar of 18 ± 1.3 cm 2 /Vs when calculated in the saturation regime (μ FE sat ). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρ C > 100 Ωcm 2 ) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μ FE is shown to be 39 ± 2.6 cm 2 /Vs which is consistent with Hall mobility measurements of high carrier density IZO.

  17. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Murata, Koichi; Mitomo, Satoshi; Matsuda, Takuma; Yokoseki, Takashi [Saitama University, Sakuraku (Japan); National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Makino, Takahiro; Onoda, Shinobu; Takeyama, Akinori; Ohshima, Takeshi [National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Okubo, Shuichi; Tanaka, Yuki; Kandori, Mikio; Yoshie, Toru [Sanken Electric Co., Ltd., Niiza, Saitama (Japan); Hijikata, Yasuto [Saitama University, Sakuraku (Japan)

    2017-04-15

    Gamma-ray irradiation into vertical type n-channel hexagonal (4H)-silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a constant positive gate bias showed a large negative shift, and the shift slightly recovered above 100 kGy. For MOSFETs with non- and a negative constant biases, no significant change in threshold voltage, V{sub th}, was observed up to 400 kGy. By changing the gate bias from positive bias to either negative or non-bias, the V{sub th} significantly recovered from the large negative voltage shift induced by 50 kGy irradiation with positive gate bias after only 10 kGy irradiation with either negative or zero bias. It indicates that the positive charges generated in the gate oxide near the oxide-SiC interface due to irradiation were removed or recombined instantly by the irradiation under zero or negative biases. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

    Science.gov (United States)

    Tang, Zhaohuan; Fu, Xinghua; Yang, Fashun; Tan, Kaizhou; Ma, Kui; Wu, Xue; Lin, Jiexing

    2017-12-01

    Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator (DSPSOI) layers. Results show that the safety operation area (SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs. Project supported by the National Natural Science Foundation of China (No. 61464002), the Grand Science and Technology Special Project in Guizhou Province of China (No. [2015]6006), and the Ministry of Education Open Foundation for Semiconductor Power Device Reliability (No. 010201).

  19. Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET

    Science.gov (United States)

    Maity, Subir Kr.; Pandit, Soumya

    2017-11-01

    InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.

  20. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  1. Reversibly Bistable Flexible Electronics

    KAUST Repository

    Alfaraj, Nasir

    2015-05-01

    Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible and optically semitransparent. While maintaining large-scale production and prototyping rapidity, this flexible and translucent scheme demonstrates the potential to transform conventionally stiff electronic devices into thin and foldable ones without compromising long-term performance and reliability. In this work, we report on the fabrication and characterization of reversibly bistable flexible electronic switches that utilize flexible n-channel metal-oxide-semiconductor field-effect transistors. The transistors are fabricated initially on rigid (100) silicon substrates before they are peeled off. They can be used to control flexible batches of light-emitting diodes, demonstrating both the relative ease of scaling at minimum cost and maximum reliability and the feasibility of integration. The peeled-off silicon fabric is about 25 µm thick. The fabricated devices are transferred to a reversibly bistable flexible platform through which, for example, a flexible smartphone can be wrapped around a user’s wrist and can also be set back to its original mechanical position. Buckling and cyclic bending of such host platforms brings a completely new dimension to the development of flexible electronics, especially rollable displays.

  2. High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials.

    Science.gov (United States)

    Song, Inho; Lee, Seung-Chul; Shang, Xiaobo; Ahn, Jaeyong; Jung, Hoon-Joo; Jeong, Chan-Uk; Kim, Sang-Wook; Yoon, Woojin; Yun, Hoseop; Kwon, O-Pil; Oh, Joon Hak

    2018-04-11

    This study investigates the performance of single-crystalline nanomaterials of wide-band gap naphthalene diimide (NDI) derivatives with methylene-bridged aromatic side chains. Such materials are found to be easily used as high-performance, visible-blind near-UV light detectors. NDI single-crystalline nanoribbons are assembled using a simple solution-based process (without solvent-inclusion problems), which is then applied to organic phototransistors (OPTs). Such OPTs exhibit excellent n-channel transistor characteristics, including an average electron mobility of 1.7 cm 2 V -1 s -1 , sensitive UV detection properties with a detection limit of ∼1 μW cm -2 , millisecond-level responses, and detectivity as high as 10 15 Jones, demonstrating the highly sensitive organic visible-blind UV detectors. The high performance of our OPTs originates from the large face-to-face π-π stacking area between the NDI semiconducting cores, which is facilitated by methylene-bridged aromatic side chains. Interestingly, NDI-based nanoribbon OPTs exhibit a distinct visible-blind near-UV detection with an identical detection limit, even under intense visible light illumination (for example, 10 4 times higher intensity than UV light intensity). Our findings demonstrate that wide-band gap NDI-based nanomaterials are highly promising for developing high-performance visible-blind UV photodetectors. Such photodetectors could potentially be used for various applications including environmental and health-monitoring systems.

  3. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

    KAUST Repository

    Lin, Che-Yu

    2017-10-04

    High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.

  4. Operational method of a ferroelectric (Fe)-NAND flash memory array

    International Nuclear Information System (INIS)

    Wang, Shouyu; Takahashi, Mitue; Li, Qiu-Hong; Sakai, Shigeki; Takeuchi, Ken

    2009-01-01

    Operations of arrayed ferroelectric (Fe)-NAND flash memory cells: erase, program and read were demonstrated for the first time using a small cell array of four word lines by two NAND strings. The memory cells and select-gate transistors were all n-channel Pt/SrBi 2 Ta 2 O 9 /Hf-Al-O/Si ferroelectric-gate field effect transistors. The erase was performed by applying 10 µs wide 7 V pulses to n- and p-wells. The program was performed by applying 10 µs wide 7 V pulses to selected word lines. Accumulated read currents of 51 programmed patterns in the Fe-NAND flash memory cell array successfully showed distribution of the two distinguishable '0' and '1' states. The margin between the two states became wider by applying a verification technique in programming a cell out of the eight. Retention times of bit-line currents were obtained over 33 h for both the '0' and '1' states in a program pattern

  5. Radiation damage in flash memory cells

    International Nuclear Information System (INIS)

    Claeys, C.; Ohyama, H.; Simoen, E.; Nakabayashi, M.; Kobayashi, K.

    2002-01-01

    Results are presented of a study on the effects of total ionization dose and displacement damage, induced by high-energy electrons, protons and alphas, on the performance degradation of flash memory cells integrated in a microcomputer. A conventional stacked-gate n-channel flash memory cell using a 0.8 μm n-polysilicon gate technology is employed. Irradiations by 1-MeV electrons and 20-MeV protons and alpha particles were done at room temperature. The impact of the fluence on the input characteristics, threshold voltage shift and drain and gate leakage was investigated. The threshold voltage change for proton and alpha irradiations is about three orders of magnitude larger than that for electrons. The performance degradation is mainly caused by the total ionization dose (TID) damage in the tunnel oxide and in the interpoly dielectric layer and by the creation of interface traps at the Si-SiO 2 interface. The impact of the irradiation temperature on the device degradation was studied for electrons and gammas, pointing out that irradiation at room temperature is mostly the worst case. Finally, attention is given to the impact of isochronal and isothermal annealing on the recovery of the degradation introduced after room temperature proton and electron irradiation

  6. Radiation-tolerant, red-sensitive CCDs for dark energy investigations

    International Nuclear Information System (INIS)

    Roe, N.A.; Bebek, C.J.; Dawson, K.S.; Emes, J.H.; Fabricius, M.H.; Fairfield, J.A.; Groom, D.E.; Holland, S.E.; Karcher, A.; Kolbe, W.F.; Palaio, N.P.; Wang, G.

    2007-01-01

    We describe the development of thick (200-300 μm), fully depleted p-channel, charge-coupled devices (CCDs). The advantages of these CCDs relative to conventional thin, n-channel CCDs include: high quantum efficiency over a wide range of wavelengths, extending into the near-infrared; negligible fringing at long (∼900-1000 nm) wavelengths; improved radiation tolerance; and a small point-spread function controlled through the application of the bias voltage. These visible-to-near-infrared light detectors are good candidates for the next generation of large focal-plane mosaics under development for dark energy measurements. The Dark Energy Survey has selected these CCDs for the focal plane of a new camera being designed for the Blanco 4 m telescope at CTIO in Chile. They also meet all the requirements for the visible-light detectors for the SuperNova/Acceleration Probe, a satellite-based experiment designed to make precision measurements of dark energy

  7. CMOS latch-up analysis and prevention

    International Nuclear Information System (INIS)

    Shafer, B.D.

    1975-06-01

    An analytical model is presented which develops relationships between ionization rates, minority carrier lifetimes, and latch-up in bulk CMOS integrated circuits. The basic mechanism for latch-up is the SCR action reported by Gregory and Shafer. The SCR is composed of a vertical NPN transistor formed by the N-channel source diffusion, the P-Well, and the N-substrate. The second part of the SCR is the lateral PNP transistor made up of the P-channel source diffusion, the N-substrate, and P-Well. It is shown that the NPN transistor turns on due to photocurrent-induced lateral voltage drops in the base of the transistor. The gain of this double diffused transistor has been shown to be as high as 100. Therefore, the transistor action of this device produces a much larger current flow in the substrate. This transistor current adds to that produced by the P-Well diode photocurrent in the substrate. It is found that the combined flow of current in the substrate forward biases the base emitter junction of the PNP device long before this could occur due to the P-Well photocurrent alone. The analysis indicated that a CD4007A CMOS device biased in the normal mode of operation should latch at about 2 . 10 8 rads/sec. Experimental results produced latch-up at 1 to 3 . 10 8 rads/sec. (U.S.)

  8. Quinoline-Flanked Diketopyrrolopyrrole Copolymers Breaking through Electron Mobility over 6 cm2 V-1 s-1 in Flexible Thin Film Devices.

    Science.gov (United States)

    Ni, Zhenjie; Dong, Huanli; Wang, Hanlin; Ding, Shang; Zou, Ye; Zhao, Qiang; Zhen, Yonggang; Liu, Feng; Jiang, Lang; Hu, Wenping

    2018-03-01

    Herein, the design and synthesis of novel π-extended quinoline-flanked diketopyrrolopyrrole (DPP) [abbreviated as QDPP] motifs and corresponding copolymers named PQDPP-T and PQDPP-2FT for high performing n-type organic field-effect transistors (OFETs) in flexible organic thin film devices are reported. Serving as DPP-flankers in backbones, quinoline is found to effectively tune copolymer optoelectric properties. Compared with TDPP and pyridine-flanked DPP (PyDPP) analogs, widened bandgaps and strengthened electron deficiency are achieved. Moreover, both hole and electron mobility are improved two orders of magnitude compared to those of PyDPP analogs (PPyDPP-T and PPyDPP-2FT). Notably, featuring an all-acceptor-incorporated backbone, PQDPP-2FT exhibits electron mobility of 6.04 cm 2 V -1 s -1 , among the highest value in OFETs fabricated on flexible substrates to date. Moreover, due to the widened bandgap and strengthened electron deficiency of PQDPP, n-channel on/off ratio over 10 5 with suppressed hole transport is first realized in the ambipolar DPP-based copolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Assessment of space proton radiation-induced charge transfer inefficiency in the CCD204 for the Euclid space observatory

    International Nuclear Information System (INIS)

    Gow, J P D; Murray, N J; Holland, A D; Hall, D J; Cropper, M; Burt, D; Hopkinson, G; Duvet, L

    2012-01-01

    Euclid is a medium class European Space Agency mission candidate for launch in 2019 with a primary goal to study the dark universe using the weak lensing and baryonic acoustic oscillations techniques. Weak lensing depends on accurate shape measurements of distant galaxies. Therefore it is beneficial that the effects of radiation-induced charge transfer inefficiency (CTI) in the Euclid CCDs over the course of the 5 year mission at L2 are understood. This will allow, through experimental analysis and modelling techniques, the effects of radiation induced CTI on shape to be decoupled from those of mass inhomogeneities along the line-of-sight. This paper discusses a selection of work from the study that has been undertaken using the e2v CCD204 as part of the initial proton radiation damage assessment for Euclid. The experimental arrangement and procedure are described followed by the results obtained, thereby allowing recommendations to be made on the CCD operating temperature, to provide an insight into CTI effects using an optical background, to assess the benefits of using charge injection on CTI recovery and the effect of the use of two different methods of serial clocking on serial CTI. This work will form the basis of a comparison with a p-channel CCD204 fabricated using the same mask set as the n-channel equivalent. A custom CCD has been designed, based on this work and discussions between e2v technologies plc. and the Euclid consortium, and designated the CCD273.

  10. DC feedback for wide band frequency fixed current source

    Directory of Open Access Journals (Sweden)

    Aoday Hashim Mohamad Al-Rawi

    2013-03-01

    Full Text Available Alternating current sources are mainly used in bioelectrical impedance devices. Nowadays 50 – 100 kHz bioelectrical impedance devices are commonly used for body composition analysis. High frequency bioelectrical impedance analysis devices are mostly used in bioimpedance tomography and blood analysis. High speed op-amps and voltage comparators are used in this circuit. Direct current feedback is used to prevent delay. An N-Channel J-FET transistor was used to establish the voltage controlled gain amplifier (VCG. A sine wave signal has been applied as input voltage. The value of this signal should be constant in 170 mV rms to keep the output current in about 1 mA rms. Four frequencies; 100 kHz, 1 MHz, 2 MHz and 3.2 MHz were applied to the circuit and the current was measured for different load resistances. The results showed that the current was stable for changes in the resistor load, bouncing around an average point as a result of bouncing DC feedback.

  11. A new high-spin isomer in {sup 195}Bi

    Energy Technology Data Exchange (ETDEWEB)

    Roy, T.; Mukherjee, G.; Rana, T.K.; Bhattacharya, Soumik; Asgar, Md.A.; Bhattacharya, C.; Bhattacharya, S.; Bhattacharyya, S.; Pai, H. [Variable Energy Cyclotron Centre, Kolkata (India); Madhavan, N.; Bala, I.; Gehlot, J.; Gurjar, R.K.; Jhingan, A.; Kumar, R.; Muralithar, S.; Nath, S.; Singh, R.P.; Varughese, T. [Inter University Acclerator Centre, New Delhi (India); Basu, K.; Bhattacharjee, S.S.; Ghugre, S.S.; Raut, R.; Sinha, A.K. [UGC-DAE-CSR Kolkata Centre, Kolkata (India); Palit, R. [Tata Institute of Fundamental Research, Department of Nuclear and Atomic Physics, Mumbai (India)

    2015-11-15

    A new high-spin isomer has been identified in {sup 195}Bi at the focal plane of the HYbrid Recoil mass Analyser (HYRA) used in the gas-filled mode. The fusion evaporation reactions {sup 169}Tm ({sup 30}Si, x n) {sup 193,} {sup 195}Bi were used with the beam energies on targets of 168 and 146MeV for 6n and 4n channels, respectively. The evaporation residues, separated from the fission fragments, and their decays were detected at the focal plane of HYRA using MWPC, Si-Pad and clover HPGe detectors. The half-life of the new isomer in {sup 195}Bi has been measured to be 1.6(1) μs. The configuration of the new isomer has been proposed and compared with the other isomers in this region. The Total Routhian Surface (TRS) calculations for the three-quasiparticle configurations corresponding to the new isomer suggest an oblate deformation for this isomeric state. The same calculations for different configurations in {sup 195}Bi and for the even-even {sup 194}Pb core indicate that the proton i{sub 13/2} orbital has a large shape driving effect towards oblate shape in these nuclei. (orig.)

  12. Swift heavy-ion induced trap generation and mixing at Si/SiO{sub 2} interface in depletion n-MOS

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya 464-8603 (Japan) and Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: nss@nucl.nagoya-u.ac.jp; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)

    2006-01-15

    Large channel depletion n-channel MOSFET (Metal oxide semiconductor field effect transistor) is a basic Si-SiO{sub 2} structure to understand irradiation-induced modifications. The contribution of interface and oxide states denoted as {delta}N {sub IT} and {delta}N {sub OT}, respectively, was separated out by using I {sub D}-V {sub DS}, I {sub D}-V {sub GS} measurements. The threshold voltage shift {delta}V {sub T} (V {sub T-irrad} - V {sub T-virgin}) increased for all ions (50 MeV Li, B, F, P and Ni) over the fluence of 2 x 10{sup 11}-2 x 10{sup 13} ions/cm{sup 2}. The increase in {delta}N {sub IT} was associated to trap generation at Si-SiO{sub 2} interface, but a small change in {delta}N {sub OT} indicate less charge trapping in oxide. The electronic energy loss S {sub e} induced increase in {delta}N {sub IT} is not adequate to explain the large shift in threshold voltage. A rough estimate shows that the channel width, W should decrease by 40% for a large increase in {delta}N {sub IT}. Thus, the possible factor affecting reduction of W may be ion beam mixing induced broadening of Si-SiO{sub 2} interface.

  13. Effects of six-quark bags on the 1D2 NN partial wave and the question of dibaryon resonances

    International Nuclear Information System (INIS)

    Grach, I.L.; Kalashnikova, Yu.S.; Narodetskij, I.M.

    1986-01-01

    The coupled 1 D 2 (pp)- 5 S 0 (ΔN) channels are studied in a relativized version of the quark compound bag (QCB) model. The QCB model is a semiphenomenological model that incorporates the important role that the bag dynamics plays at small distances. In this model, the short-range hadron force is given by the energy-dependent and non-local potential and contains few parameters which are defined by the wave function of the six-quark primitive. It is suggested that this force is responsible for the appearance of the S-matrix pole of the dibaryon amplitude. The QCD short-range force is shown to reproduce an energy dependence of the 1 D 2 phase shift and inelasticity in the region T >or approx. 200 MeV. At small energy the effect of the long-range meson force is essential. The values of the QCD parameters found from the fit to the data are in good agreement with theoretical predictions for the MIT bag model

  14. Double ionization of nitrogen molecules in orthogonal two-color femtosecond laser fields

    Science.gov (United States)

    Song, Qiying; Li, Hui; Wang, Junping; Lu, Peifen; Gong, Xiaochun; Ji, Qinying; Lin, Kang; Zhang, Wenbin; Ma, Junyang; Li, Hanxiao; Zeng, Heping; He, Feng; Wu, Jian

    2018-04-01

    Double ionization of nitrogen molecules in orthogonally polarized two-color femtosecond laser fields is investigated by varying the relative intensity between the fundamental wave (FW) and its second harmonic (SH) components. The yield ratios of the double ionization channels, i.e., the non-dissociative {{{{N}}}2}2+ and Coulomb exploded (N+, N+), to the singly charged N2 + channel exhibit distinct dependences on the relative strength between the FW and SH fields. As the intensity ratio of SH to FW increases, the yield ratio of (N+, N+)/N2 + gradually increases, while the ratio of {{{{N}}}2}2+/N2 + first descends and then increases constituting a valley shape which is similar to the behavior of Ar2+/Ar+ observed in the same experimental condition. Based on the classical trajectory simulations, we found that the different characteristics of the two doubly ionized channels stem from two mechanisms, i.e., the {{{{N}}}2}2+ is mostly accessed by the (e, 2e) impact ionization while the recollision-induced excitation with subsequent ionization plays an important role in producing the (N+, N+) channel.

  15. A Comprehensive Analysis and Hardware Implementation of Control Strategies for High Output Voltage DC-DC Boost Power Converter

    Directory of Open Access Journals (Sweden)

    Sanjeevikumar Padmanaban

    2017-01-01

    Full Text Available Classical DC-DC converters used in high voltage direct current (HVDC power transmission systems, lack in terms of efficiency, reduced transfer gain and increased cost with sensor (voltage/current numbers. Besides, the internal self-parasitic behavior of the power components reduces the output voltage and efficiency of classical HV converters. This paper deals with extra high-voltage (EHV dc-dc boost converter by the application of voltage-lift technique to overcome the aforementioned deficiencies. The control strategy is based on classical proportional-integral (P-I and fuzzy logic closed-loop controller to get high and stable output voltage. Complete hardware prototype of EHV is implemented and experimental tasks are carried out with digital signal processor (DSP TMS320F2812. The control algorithms P-I, fuzzy logic and the pulse-width modulation (PWM signals for N-channel MOSFET device are performed by the DSP. The experimental results provided show good conformity with developed hypothetical predictions. Additionally, the presented study confirms that the fuzzy logic controller provides better performance than classical P-I controller under different perturbation conditions.

  16. Interleaved numerical renormalization group as an efficient multiband impurity solver

    Science.gov (United States)

    Stadler, K. M.; Mitchell, A. K.; von Delft, J.; Weichselbaum, A.

    2016-06-01

    Quantum impurity problems can be solved using the numerical renormalization group (NRG), which involves discretizing the free conduction electron system and mapping to a "Wilson chain." It was shown recently that Wilson chains for different electronic species can be interleaved by use of a modified discretization, dramatically increasing the numerical efficiency of the RG scheme [Phys. Rev. B 89, 121105(R) (2014), 10.1103/PhysRevB.89.121105]. Here we systematically examine the accuracy and efficiency of the "interleaved" NRG (iNRG) method in the context of the single impurity Anderson model, the two-channel Kondo model, and a three-channel Anderson-Hund model. The performance of iNRG is explicitly compared with "standard" NRG (sNRG): when the average number of states kept per iteration is the same in both calculations, the accuracy of iNRG is equivalent to that of sNRG but the computational costs are significantly lower in iNRG when the same symmetries are exploited. Although iNRG weakly breaks SU(N ) channel symmetry (if present), both accuracy and numerical cost are entirely competitive with sNRG exploiting full symmetries. iNRG is therefore shown to be a viable and technically simple alternative to sNRG for high-symmetry models. Moreover, iNRG can be used to solve a range of lower-symmetry multiband problems that are inaccessible to sNRG.

  17. Quantitative spectromicroscopy from inelastically scattered photoelectrons in the hard X-ray range

    Energy Technology Data Exchange (ETDEWEB)

    Renault, O., E-mail: olivier.renault@cea.fr; Zborowski, C.; Risterucci, P. [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Wiemann, C.; Schneider, C. M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Grenet, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale, 69134 Ecully Cedex (France); Tougaard, S. [Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, DK-5230 Odense M (Denmark)

    2016-07-04

    We demonstrate quantitative, highly bulk-sensitive x-ray photoelectron emission microscopy by analysis of inelastically scattered photoelectrons in the hard X-ray range, enabling elemental depth distribution analysis in deeply buried layers. We show results on patterned structures used in electrical testing of high electron mobility power transistor devices with an epitaxial Al{sub 0.25}Ga{sub 0.75}N channel and a Ti/Al metal contact. From the image series taken over an energy range of up to 120 eV in the Ti 1s loss feature region and over a typical 100 μm field of view, one can accurately retrieve, using background analysis together with an optimized scattering cross-section, the Ti depth distribution from 14 nm up to 25 nm below the surface. The method paves the way to multi-elemental, bulk-sensitive 3D imaging and investigation of phenomena at deeply buried interfaces and microscopic scales by photoemission.

  18. Partial gamma-ray cross section measurements in 109Ag(n, x n y p gamma) reactions

    Energy Technology Data Exchange (ETDEWEB)

    Fotiadis, Nikolaos [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Devlin, Matthew James [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Nelson, Ronald Owen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Carroll, James [US Army Research Laboratory, Adelphi, MD (United States)

    2015-06-02

    We report on absolute partial cross sections for production of discrete γ-rays using 109Ag(n, xnypγ) reactions with x ≤ 7 and y ≤ 1 in a total of 12 reaction channels. The data were taken using the GEANIE spectrometer comprised of 20 high-purity Ge detectors with 20 BGO escape-suppression shields. The broad-spectrum pulsed neutron beam of the Los Alamos Neutron Science Center’s (LANSCE) WNR facility provided neutrons in the energy range from 0.2 to 300 MeV. The time-of- flight technique was used to determine the incident neutron energies. Partial γ-ray cross sections have been measured for a total of 109 transitions and for neutron energies 0.8 MeV< En<300 MeV. An estimate of the population of isomers in the (n, n'), (n, 2n) and (n, 3n) channels was made.

  19. Dynamics of Db isotopes formed in reactions induced by 238U, 248Cm, and 249Bk across the Coulomb barrier

    Science.gov (United States)

    Kaur, Gurjit; Sandhu, Kirandeep; Kaur, Amandeep; Sharma, Manoj K.

    2018-05-01

    The dynamical cluster decay model is employed to investigate the decay of *265Db and *267Db nuclei, formed in the 27Al+238U , 18O+249Bk , and 19F+248Cm hot fusion reactions at energies around the Coulomb barrier. First, the fission dynamics of the 27Al+238U reaction is explored by investigating the fragmentation and preformation yield of the reaction. The symmetric mass distribution of the fission fragments is observed for *265Db nucleus, when static β2 i deformations are used within hot optimum orientation approach. However, the mass split gets broaden for the use of β2 i-dynamical hot configuration of the fragments and becomes clearly asymmetric for the cold-static-deformed approach. Within the application of cold orientations of fragments, a new fission channel is observed at mass asymmetry η =0.29 . In addition to 238U-induced reaction, the work is carried out to address the fission and neutron evaporation cross sections of *267Db nucleus formed via 19F+248Cm and 18O+249Bk reactions, besides a comprehensive analysis of fusion and capture processes. Higher fusion cross sections and compound nucleus formation probabilities (PCN) are obtained for the 18O+249Bk reaction, as larger mass asymmetry in the entrance channel leads to reduced Coulomb factor. Finally, the role of sticking (IS) and nonsticking (INS) moments of inertia is analyzed for the 4 n and 5 n channels of *267Db nuclear system.

  20. A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

    Science.gov (United States)

    Ishii, Yuichiro; Tanaka, Miki; Yabuuchi, Makoto; Sawada, Yohei; Tanaka, Shinji; Nii, Koji; Lu, Tien Yu; Huang, Chun Hsien; Sian Chen, Shou; Tse Kuo, Yu; Lung, Ching Cheng; Cheng, Osbert

    2018-04-01

    We propose a highly symmetrical 10 transistor (10T) 2-read/write (2RW) dual-port (DP) static random access memory (SRAM) bitcell in 28 nm high-k/metal-gate (HKMG) planar bulk CMOS. It replaces the conventional 8T 2RW DP SRAM bitcell without any area overhead. It significantly improves the robustness of process variations and an asymmetric issue between the true and bar bitline pairs. Measured data show that read current (I read) and read static noise margin (SNM) are respectively boosted by +20% and +15 mV by introducing the proposed bitcell with enlarged pull-down (PD) and pass-gate (PG) N-channel MOSs (NMOSs). The minimum operating voltage (V min) of the proposed 256 kbit 10T DP SRAM is 0.53 V in the TT process, 25 °C under the worst access condition with read/write disturbances, and improved by 90 mV (15%) compared with the conventional one.

  1. A Low-Power CMOS Piezoelectric Transducer Based Energy Harvesting Circuit for Wearable Sensors for Medical Applications

    Directory of Open Access Journals (Sweden)

    Taeho Oh

    2017-12-01

    Full Text Available Piezoelectric vibration based energy harvesting systems have been widely utilized and researched as powering modules for various types of sensor systems due to their ease of integration and relatively high energy density compared to RF, thermal, and electrostatic based energy harvesting systems. In this paper, a low-power CMOS full-bridge rectifier is presented as a potential solution for an efficient energy harvesting system for piezoelectric transducers. The energy harvesting circuit consists of two n-channel MOSFETs (NMOS and two p-channel MOSFETs (PMOS devices implementing a full-bridge rectifier coupled with a switch control circuit based on a PMOS device driven by a comparator. With a load of 45 kΩ, the output rectifier voltage and the input piezoelectric transducer voltage are 694 mV and 703 mV, respectably, while the VOUT versus VIN conversion ratio is 98.7% with a PCE of 52.2%. The energy harvesting circuit has been designed using 130 nm standard CMOS process.

  2. Design and fabrication of ZnO/TiO2-based thin-film inverter circuits using solution processing techniques

    International Nuclear Information System (INIS)

    Liau, Leo Chau-Kuang; Kuo, Juo-Wei; Chiang, Hsin-Ni

    2012-01-01

    Novel and cost-effective ceramic-based thin-film inverter circuits, based on two layers of TiO 2 and ZnO films to construct junction field-effect transistors (FETs), were designed and fabricated by solution coating techniques. The double layers of the sol–gel ZnO and TiO 2 films were coated and characterized as a diode according to the current–voltage performance. Two types of FETs, the p-channel (p-FET) and the n-channel (n-FET) devices, were produced using different coating sequences of ZnO and TiO 2 layers. Both of the transistor performances were evaluated by analyzing the source–drain current versus voltage (I ds –V ds ) data with the control of the gate voltage (V g ). The ZnO/TiO 2 -based inverter circuits, such as the complementary-FET device, were further fabricated using the integration of the p-FET and the n-FET. The voltage transfer characteristics of the inverters were estimated by the tests of the input voltage (V in ) versus the output voltage (V out ) for the thin-film inverter circuits. (paper)

  3. Light sensing in a photoresponsive, organic-based complementary inverter.

    Science.gov (United States)

    Kim, Sungyoung; Lim, Taehoon; Sim, Kyoseung; Kim, Hyojoong; Choi, Youngill; Park, Keechan; Pyo, Seungmoon

    2011-05-01

    A photoresponsive organic complementary inverter was fabricated and its light sensing characteristics was studied. An organic circuit was fabricated by integrating p-channel pentacene and n-channel copper hexadecafluorophthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) with a polymeric gate dielectric. The F16CuPc OTFT showed typical n-type characteristics and a strong photoresponse under illumination. Whereas under illumination, the pentacene OTFT showed a relatively weak photoresponse with typical p-type characteristics. The characteristics of the organic electro-optical circuit could be controlled by the incident light intensity, a gate bias, or both. The logic threshold (V(M), when V(IN) = V(OUT)) was reduced from 28.6 V without illumination to 19.9 V at 6.94 mW/cm². By using solely optical or a combination of optical and electrical pulse signals, light sensing was demonstrated in this type of organic circuit, suggesting that the circuit can be potentially used in various optoelectronic applications, including optical sensors, photodetectors and electro-optical transceivers.

  4. An SEU tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAM

    International Nuclear Information System (INIS)

    Weaver, H.T.; Axness, C.L.; McBrayer, J.D.; Browning, J.S.; Fu, J.S.; Ochoa, A. Jr.; Koga, R.

    1987-01-01

    A new single event upset (SEU) hardening concept, an LRAM cell, is demonstrated theoretically and experimentally. Decoupling resistors in the LRAM are used only to protect against the short n-channel transient; longer persisting pulses are reduced in magnitude by a voltage divider, a basically new concept for SEU protection. In such a design, smaller resistors provide SEU tolerance, allowing higher performance, hardened memories. As basis for the LRAM idea, techniques were developed to measure time constants for ion induced voltage transients in conventional static random access memories, SRAM. Time constants of 0.8 and 6.3 nsec were measured for transients following strikes at the n- and p-channel drains, respectively - primary areas of SEU sensitivity. These data are the first transient time measurements on full memory chips and the large difference is fundamental to the LRAM concept. Test structures of the new design exhibit equivalent SEU tolerance with resistors 5-to-10 times smaller than currently used in SRAM. Our advanced transport-plus-circuit numerical simulations of the SEU process predicted this result and account for the LRAM experiments, as well as a variety of experiments on conventional SRAM

  5. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    Science.gov (United States)

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  6. Organic Semiconductors based on Dyes and Color Pigments.

    Science.gov (United States)

    Gsänger, Marcel; Bialas, David; Huang, Lizhen; Stolte, Matthias; Würthner, Frank

    2016-05-01

    Organic dyes and pigments constitute a large class of industrial products. The utilization of these compounds in the field of organic electronics is reviewed with particular emphasis on organic field-effect transistors. It is shown that for most major classes of industrial dyes and pigments, i.e., phthalocyanines, perylene and naphthalene diimides, diketopyrrolopyrroles, indigos and isoindigos, squaraines, and merocyanines, charge-carrier mobilities exceeding 1 cm(2) V(-1) s(-1) have been achieved. The most widely investigated molecules due to their n-channel operation are perylene and naphthalene diimides, for which even values close to 10 cm(2) V(-1) s(-1) have been demonstrated. The fact that all of these π-conjugated colorants contain polar substituents leading to strongly quadrupolar or even dipolar molecules suggests that indeed a much larger structural space shows promise for the design of organic semiconductor molecules than was considered in this field traditionally. In particular, because many of these dye and pigment chromophores demonstrate excellent thermal and (photo-)chemical stability in their original applications in dyeing and printing, and are accessible by straightforward synthetic protocols, they bear a particularly high potential for commercial applications in the area of organic electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

    Science.gov (United States)

    Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

    2016-09-01

    In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

  8. FIVE PHASE PENTAGON HYBRID STEPPER MOTOR INTELLIGENT HALF/FULL DRIVER

    Directory of Open Access Journals (Sweden)

    Alexandru Morar

    2017-06-01

    Full Text Available Stepper motors are very well suited for positioning applications since they can achieve very good positional accuracy without complicated feedback loops associated with servo systems. In this paper, an intelligent five-phase stepper motor driver of business card size proposed. Constant current chopping technique was applied for the purposes of high torque, high velocity and high efficiency. The driver was designed to drive a middle-sized hybrid stepper motor with wire current rating from 0.4 to 1.5A. An up-to-dated translator of five-phase stepping motor was used to drive the gates of N- channel MOSFET array. The resolution in full/half mode is 0.72/0.36 degrees/step. Moreover, an automatic power down circuit was used to limit the power consuming as the motor stops. Additionally, a self-testing program embedded in a 80C31-CPU (PCL838 can self-test whether the driver is normal or not. This embedded program including linear acceleration and deceleration routines also can serve as a positioning controller. The dimension of this driver is approximate 70x65x35 millimeters, which is smaller than a business card. Experimental results demonstrate that the responses of the driver can reach 60 kilo pulses per second

  9. Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

    KAUST Repository

    Zhang, Lei

    2016-11-04

    We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

  10. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon

    2017-03-15

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  11. Monolithic pixel detectors in a 0.13μm CMOS technology with sensor level continuous time charge amplification and shaping

    International Nuclear Information System (INIS)

    Ratti, L.; Manghisoni, M.; Re, V.; Speziali, V.; Traversi, G.; Bettarini, S.; Calderini, G.; Cenci, R.; Giorgi, M.; Forti, F.; Morsani, F.; Rizzo, G.

    2006-01-01

    This work studies the feasibility of a new implementation of CMOS monolithic active pixel sensors (MAPS) for applications to charged particle tracking. As compared to standard three MOSFET MAPS, where the charge signal is readout by a source follower, the proposed front-end scheme relies upon a charge sensitive amplifier (CSA), embedded in the elementary pixel cell, to perform charge-to-voltage conversion. The area required for the integration of the front-end electronics is mostly provided by the collecting electrode, which consists of a deep n-type diffusion, available as a shielding frame for n-channel devices in deep submicron, triple well CMOS technologies. Based on the above concept, a chip, which includes several test structures differing in the sensitive element area, has been fabricated in a 0.13μm CMOS process. In this paper, the criteria underlying the design of the pixel level analog processor will be presented, together with some preliminary experimental results demonstrating the feasibility of the proposed approach

  12. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D.

    2017-01-01

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  13. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  14. Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

    Energy Technology Data Exchange (ETDEWEB)

    Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

    2016-07-04

    This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

  15. Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application.

    Science.gov (United States)

    Chatterjee, Prasenjit; Chow, Hwang-Cherng; Feng, Wu-Shiung

    2016-08-30

    This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 µA for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 µA bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T(-1)), which is very effective as compared to other previously reported works for a single device.

  16. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-08-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

  17. Improving the positive feedback adiabatic logic familiy

    Directory of Open Access Journals (Sweden)

    J. Fischer

    2004-01-01

    Full Text Available Positive Feedback Adiabatic Logic (PFAL shows the lowest energy dissipation among adiabatic logic families based on cross-coupled transistors, due to the reduction of both adiabatic and non-adiabatic losses. The dissipation primarily depends on the resistance of the charging path, which consists of a single p-channel MOSFET during the recovery phase. In this paper, a new logic family called Improved PFAL (IPFAL is proposed, where all n- and pchannel devices are swapped so that the charge can be recovered through an n-channel MOSFET. This allows to decrease the resistance of the charging path up to a factor of 2, and it enables a significant reduction of the energy dissipation. Simulations based on a 0.13µm CMOS process confirm the improvements in terms of power consumption over a large frequency range. However, the same simple design rule, which enables in PFAL an additional reduction of the dissipation by optimal transistor sizing, does not apply to IPFAL. Therefore, the influence of several sources of dissipation for a generic IPFAL gate is illustrated and discussed, in order to lower the power consumption and achieve better performance.

  18. The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Johnson, G.H.; Kemp, W.T.; Ackermann, M.R.; Pugh, R.D.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    This is the first report of commercial n- and p-channel power MOSFETs exposed to ionizing radiation while operating in a cryogenic environment. The transistors were exposed to low energy x-rays while placed in a liquid nitrogen-cooled dewar. Results demonstrate significant performance and survivability advantages for space-borne power MOSFETs operated at cryogenic temperatures. The key advantages for low-temperature operation of power MOSFET's in an ionizing radiation environment are: (1) steeper subthreshold current slope before and after irradiation; (2) lower off-state leakage currents before and after irradiation; and (3) larger prerad threshold voltage for n-channel devices. The first two points are also beneficial for devices that are not irradiated, but the advantages are more significant in radiation environments. The third point is only an advantage for commercial devices operated in radiation environments. Results also demonstrate that commercial off-the-shelf power MOSFETs can be used for low-temperature operations in a limited total dose environment (i.e., many space applications)

  19. Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

    Science.gov (United States)

    Takulapalli, Bharath R

    2010-02-23

    Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

  20. Synchrotron X-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

    International Nuclear Information System (INIS)

    Tanaka, Yuusuke; Tanabe, Akira; Suzuki, Katsumi

    1998-01-01

    The effects of synchrotron x-ray irradiation on the device characteristics and hot-carrier resistance of n- and p-channel metal oxide semiconductor field effect transistors (MOSFETs) with 4 nm thick gate oxides are investigated. In p-channel MOSFETs, device characteristics were significantly affected by the x-ray irradiation but completely recovered after annealing, while the device characteristics in n-channel MOSFETs were not noticeably affected by the irradiation. This difference appears to be due to a difference in interface-state generation. In p-channel MOSFETs, defects caused by boron-ion penetration through the gate oxides may be sensitive to x-ray irradiation, causing the generation of many interface states. These interface states are completely eliminated after annealing in hydrogen gas. The effects of irradiation on the resistance to hot-carrier degradation in annealed 4 nm thick gate-oxide MOSFETs were negligible even at an x-ray dose of 6,000 mJ/cm 2

  1. Prediction of total dose effects on sub-micron process metal oxide semiconductor devices

    International Nuclear Information System (INIS)

    Kamimura, Hiroshi; Kato, Masataka.

    1991-01-01

    A method for correcting leakage currents is described to predict the radiation-induced threshold voltage shift of sub-micron MOSFETs. A practical model for predicting the leakage current generated by irradiation is also given on the basis of experimental results on 0.8-μm process MOSFETs. The constants in the threshold voltage shift model are determined from the 'true' I-V characteristic of the MOSFET, which is obtained by correction of leakage currents due to characteristic change of a parasitic transistor. In this way, the threshold voltage shift of the n-channel MOSFET irradiated at a low dose rate of 2 Gy(Si)/h was also calculated by using data from a high dose rate irradiation experiment (100 Gy(Si)/h, 5 h). The calculated result well represented the tendency of measured data on threshold voltage shift. The radiation-induced leakage current was considered to decay approximately in two exponential modes. The constants in this leakage current model were determined from the above high dose rate experiment. The response of leakage current predicted at a low dose rate of 2 Gy(Si)/h approximately agreed with that measured during and after irradiation. (author)

  2. Memristive behavior in a junctionless flash memory cell

    Energy Technology Data Exchange (ETDEWEB)

    Orak, Ikram [Vocational School of Health Services, Bingöl University, 12000 Bingöl (Turkey); Department of Physics, Faculty of Science and Art, Bingöl University, 12000 Bingöl (Turkey); Ürel, Mustafa; Dana, Aykutlu, E-mail: aykutlu@unam.bilkent.edu.tr [UNAM Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Bakan, Gokhan [Faculty of Engineering, Antalya International University, 07190 Antalya (Turkey)

    2015-06-08

    We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO{sub 2} as the tunnel dielectric, Al{sub 2}O{sub 3} as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits the pinched hysteresis of a memristor and in the unoptimized device, R{sub off}/R{sub on} ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts R{sub off}/R{sub on} ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 10{sup 6 }s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable.

  3. Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Duan, Tian Li; Pan, Ji Sheng; Wang, Ning; Cheng, Kai; Yu, Hong Yu

    2017-08-17

    The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al 2 O 3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfacial layer is formed between top GaN and Al 2 O 3 due to the occurrence of Ga-N bond break and Ga-O bond forming during Al 2 O 3 deposition via the atomic layer deposition (ALD). This interfacial layer is believed to eliminate the GaN polarization, thus reducing the polarization-induced negative charges. Furthermore, this interfacial layer plays a key role for the introduction of the positive charges which lead the energy band downward. Finally, a N 2 annealing at 400 °C is observed to enhance the interfacial layer growth thus increasing the density of positive charges.

  4. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

    Science.gov (United States)

    Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

    2018-02-01

    A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

  5. Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio

    International Nuclear Information System (INIS)

    Bhattacharjee, A.; Lenka, T. R.

    2014-01-01

    We propose a new structure of In x Al 1−x N/GaN high electron mobility transistor (HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved as −0.472 V. In this device the InAlN barrier layer is intentionally n-doped to boost the I ON /I OFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an I ON = 10 −4.3 A and a very low I OFF = 10 −14.4 A resulting in an I ON /I OFF ratio of 10 10.1 . We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost 10 5 times better I ON /I OFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C–V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability. (semiconductor devices)

  6. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  7. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-01-01

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme

  8. A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications

    Science.gov (United States)

    Kim, Seonyeong; Shin, Somyeong; Kim, Taekwang; Du, Hyewon; Song, Minho; Kim, Ki Soo; Cho, Seungmin; Lee, Sang Wook; Seo, Sunae

    2017-04-01

    The modulation of charge carrier concentration allows us to tune the Fermi level (E F) of graphene thanks to the low electronic density of states near the E F. The introduced metal oxide thin films as well as the modified transfer process can elaborately maneuver the amounts of charge carrier concentration in graphene. The self-encapsulation provides a solution to overcome the stability issues of metal oxide hole dopants. We have manipulated systematic graphene p-n junction structures for electronic or photonic application-compatible doping methods with current semiconducting process technology. We have demonstrated the anticipated transport properties on the designed heterojunction devices with non-destructive doping methods. This mitigates the device architecture limitation imposed in previously known doping methods. Furthermore, we employed E F-modulated graphene source/drain (S/D) electrodes in a low dimensional transition metal dichalcogenide field effect transistor (TMDFET). We have succeeded in fulfilling n-type, ambipolar, or p-type field effect transistors (FETs) by moving around only the graphene work function. Besides, the graphene/transition metal dichalcogenide (TMD) junction in either both p- and n-type transistor reveals linear voltage dependence with the enhanced contact resistance. We accomplished the complete conversion of p-/n-channel transistors with S/D tunable electrodes. The E F modulation using metal oxide facilitates graphene to access state-of-the-art complimentary-metal-oxide-semiconductor (CMOS) technology.

  9. Radiation effects in LDD MOS devices

    International Nuclear Information System (INIS)

    Woodruff, R.L.; Adams, J.R.

    1987-01-01

    The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays with Co-60 gamma rays. The authors find that for the gate oxides and transistor structures investigated in this work, 10 keV x-rays produce more fixed-charge guild-up in the gate oxide, and more interface charge than do Co-60 gamma rays. They determined that the radiation response of LDD transistors is similar to that of conventional (non-LDD) transistors. In addition, both standard and radiation-hardened transistors subjected to hot carrier stress before irradiation show a similar radiation response. After exposure to 1.0 x 10 6 rads(Si), non-hardened transistors show increased susceptibility to hot-carrier graduation, while the radiation-hardened transistors exhibit similar hot-carrier degradation to non-irradiated devices. The authors have demonstrated a fully-integrated radiation hardened process tht is solid to 1.0 x 10 6 rads(Si), and shows promise for achieving 1.0 x 10 7 rad(Si) total-dose capability

  10. Lower-Order Compensation Chain Threshold-Reduction Technique for Multi-Stage Voltage Multipliers

    Directory of Open Access Journals (Sweden)

    Francesco Dell’ Anna

    2018-04-01

    Full Text Available This paper presents a novel threshold-compensation technique for multi-stage voltage multipliers employed in low power applications such as passive and autonomous wireless sensing nodes (WSNs powered by energy harvesters. The proposed threshold-reduction technique enables a topological design methodology which, through an optimum control of the trade-off among transistor conductivity and leakage losses, is aimed at maximizing the voltage conversion efficiency (VCE for a given ac input signal and physical chip area occupation. The conducted simulations positively assert the validity of the proposed design methodology, emphasizing the exploitable design space yielded by the transistor connection scheme in the voltage multiplier chain. An experimental validation and comparison of threshold-compensation techniques was performed, adopting 2N5247 N-channel junction field effect transistors (JFETs for the realization of the voltage multiplier prototypes. The attained measurements clearly support the effectiveness of the proposed threshold-reduction approach, which can significantly reduce the chip area occupation for a given target output performance and ac input signal.

  11. Verification of the linearity of the IPR-R1 TRIGA reactor power channels

    International Nuclear Information System (INIS)

    Souza, Rose Mary Gomes do Prado; Campolina, Daniel de Almeida Magalhaes

    2013-01-01

    The aim of this paper is to verify the linearity of the three power channels of the IPR-R1 TRIGA reactor. Located at Nuclear Technology Development Center-CDTN in Belo Horizonte, the IPR-R1 reactor is a typical 100 kW Mark I light-water reactor cooled by natural convection. When the experiments were performed, the reactor core had 59 fuel elements, containing 8% by weight of uranium enriched to 20% in 235 U. The core has cylindrical configuration with an annular graphite reflector. The responses of the detectors of the Linear, Log N and Percent Power channels were compared with the responses of detectors which only depend on the overall neutron flux within the reactor. Gold and cobalt foils were activated at low and high powers, respectively, and the specific count results were compared with measurements performed, simultaneously, with a fission chamber, and with the power registered by the three channels. The results show that the Linear channel responds linearly up to 100 kW, and the Log N channel responses are linear at low powers. In the range of high power, the Log N and the Percent Power channels exhibit linearity only from 10 kW to 50 kW. (author)

  12. Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

    KAUST Repository

    Zhang, Lei; Rose, Bradley Daniel; Liu, Yao; Nahid, Masrur M.; Gann, Eliot; Ly, Jack; Zhao, Wei; Rosa, Stephen J.; Russell, Thomas P.; Facchetti, Antonio; McNei, Christopher R.; Bredas, Jean-Luc; Briseno, Alejandro L.

    2016-01-01

    We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

  13. Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

    Science.gov (United States)

    Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

  14. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

    Science.gov (United States)

    Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen

    2017-11-28

    High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

  15. Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

    Science.gov (United States)

    Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

  16. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

    International Nuclear Information System (INIS)

    Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

    2013-01-01

    Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

  17. Properties of rho and eta mesons in nuclear matter

    International Nuclear Information System (INIS)

    Herrmann, M.; Sauermann, C.; Friman, B.L.; Technische Hochschule Darmstadt; Noerenberg, W.; Technische Hochschule Darmstadt

    1993-10-01

    The properties of ρ- and η-mesons in nuclear matter are studied within the scope of hadronic models. Unknown model parameters are obtained from fits to scattering data. - The treatment of the ρ-meson includes the coupling to two pions which, in matter, are strongly mixed with delta-particle-nucleon-hole states. The ρ-meson self-energy is evaluated in a current conserving approximation with in-medium pion propagators and vertex corrections. While the position of the original peak in the spectral function remains almost unchanged, its width grows rapidly with increasing density. Consequently, the ρ-meson strength function is strongly dispersed at high densities. Due to vertex corrections a new peak at a mass around 3m π emerges with increasing density, while the spectral function around the two-pion threshold is found to be smooth at all densities. The η-meson is strongly mixed with N * (1535)-particle-nucleon-hole states in nuclear matter. The corresponding dispersion relations with an upper and a lower branch look similar to those of the (π, ΔN -1 )-modes. However, since the N * is an S-wave resonance in the ηN-channel, the repulsion of the two branches survives at zero momentum. (orig.)

  18. Lower-Order Compensation Chain Threshold-Reduction Technique for Multi-Stage Voltage Multipliers.

    Science.gov (United States)

    Dell' Anna, Francesco; Dong, Tao; Li, Ping; Wen, Yumei; Azadmehr, Mehdi; Casu, Mario; Berg, Yngvar

    2018-04-17

    This paper presents a novel threshold-compensation technique for multi-stage voltage multipliers employed in low power applications such as passive and autonomous wireless sensing nodes (WSNs) powered by energy harvesters. The proposed threshold-reduction technique enables a topological design methodology which, through an optimum control of the trade-off among transistor conductivity and leakage losses, is aimed at maximizing the voltage conversion efficiency (VCE) for a given ac input signal and physical chip area occupation. The conducted simulations positively assert the validity of the proposed design methodology, emphasizing the exploitable design space yielded by the transistor connection scheme in the voltage multiplier chain. An experimental validation and comparison of threshold-compensation techniques was performed, adopting 2N5247 N-channel junction field effect transistors (JFETs) for the realization of the voltage multiplier prototypes. The attained measurements clearly support the effectiveness of the proposed threshold-reduction approach, which can significantly reduce the chip area occupation for a given target output performance and ac input signal.

  19. Efficient Color-Stable Inverted White Organic Light-Emitting Diodes with Outcoupling-Enhanced ZnO Layer.

    Science.gov (United States)

    Zhao, Xin-Dong; Li, Yan-Qing; Xiang, Heng-Yang; Zhang, Yi-Bo; Chen, Jing-De; Xu, Lu-Hai; Tang, Jian-Xin

    2017-01-25

    Inverted organic light-emitting diode (OLED) has attracted extensive attention due to the demand in active-matrix OLED display panels as its geometry enables the direct connection with n-channel transistor backplane on the substrate. One key challenge of high-performance inverted OLED is an efficient electron-injection layer with superior electrical and optical properties to match the indium tin oxide cathode on substrate. We here propose a synergistic electron-injection architecture using surface modification of ZnO layer to simultaneously promote electron injection into organic emitter and enhance out-coupling of waveguided light. An efficient inverted white OLED is realized by introducing the nanoimprinted aperiodic nanostructure of ZnO for broadband and angle-independent light out-coupling and inserting an n-type doped interlayer for energy level tuning and injection barrier lowering. As a result, the optimized inverted white OLEDs have an external quantum efficiency of 42.4% and a power efficiency of 85.4 lm W 1- , which are accompanied by the superiority of angular color stability over the visible wavelength range. Our results may inspire a promising approach to fabricate high-efficiency inverted OLEDs for large-scale display panels.

  20. Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Huyen Thanh Pham

    2016-01-01

    Full Text Available We have demonstrated a method for using proper models of pentacene P-channel and fullerene N-channel thin-film transistors (TFTs in order to design and simulate organic integrated circuits. Initially, the transistors were fabricated, and we measured their main physical and electrical parameters. Then, these organic TFTs (OTFTs were modeled with support of an organic process design kit (OPDK added in Cadence. The key specifications of the modeled elements were extracted from measured data, whereas the fitting ones were elected to replicate experimental curves. The simulating process proves that frequency responses of the TFTs cover all biosignal frequency ranges; hence, it is reasonable to deploy the elements to design integrated circuits used in biomedical applications. Complying with complementary rules, the organic circuits work properly, including logic gates, flip-flops, comparators, and analog-to-digital converters (ADCs as well. The proposed successive-approximation-register (SAR ADC consumes a power of 883.7 µW and achieves an ENOB of 5.05 bits, a SNR of 32.17 dB at a supply voltage of 10 V, and a sampling frequency of about 2 KHz.

  1. High-k shallow traps observed by charge pumping with varying discharging times

    International Nuclear Information System (INIS)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

    2013-01-01

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

  2. Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

    International Nuclear Information System (INIS)

    Al-Shareef, H. N.; Karamcheti, A.; Luo, T. Y.; Bersuker, G.; Brown, G. A.; Murto, R. W.; Jackson, M. D.; Huff, H. R.; Kraus, P.; Lopes, D.

    2001-01-01

    In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. [copyright] 2001 American Institute of Physics

  3. Observation of high-lying resonances in the H sup minus ion

    Energy Technology Data Exchange (ETDEWEB)

    Harris, P.G. (Los Alamos National Lab., NM (USA) New Mexico Univ., Albuquerque, NM (USA). Dept. of Physics and Astronomy)

    1990-05-01

    This dissertation reports the observation of several series of resonances, for which both electrons are in excited states, in the photodetachment cross section of H{sup {minus}}. These {sup 1}P doubly-excited states interfere with the continuum in which they are embedded, and appear as dips in the production cross section of excited neutral hydrogen. The experiment was performed by intersecting an 800 MeV H{sup {minus}} beam with a (266 nm) laser beam at varying angles; the relativistic Doppler shift then tuned'' the photon energy in the barycentric frame. The process was observed by using a magnet strong enough the strip the electrons from the excited hydrogen atoms in selected states n and detecting the resulting protons, which allowed the isolation of the individual n channels. Three resonances are clearly visible in each channel. The data support recent theoretical calculations for the positions of doubly-excited {sup 1}P resonances, and verify a new Rydberg-like formula for the modified Coulomb potential.

  4. Validation of a Portable Low-Power Deep Brain Stimulation Device Through Anxiolytic Effects in a Laboratory Rat Model.

    Science.gov (United States)

    Kouzani, Abbas Z; Kale, Rajas P; Zarate-Garza, Pablo Patricio; Berk, Michael; Walder, Ken; Tye, Susannah J

    2017-09-01

    Deep brain stimulation (DBS) devices deliver electrical pulses to neural tissue through an electrode. To study the mechanisms and therapeutic benefits of deep brain stimulation, murine preclinical research is necessary. However, conducting naturalistic long-term, uninterrupted animal behavioral experiments can be difficult with bench-top systems. The reduction of size, weight, power consumption, and cost of DBS devices can assist the progress of this research in animal studies. A low power, low weight, miniature DBS device is presented in this paper. This device consists of electronic hardware and software components including a low-power microcontroller, an adjustable current source, an n-channel metal-oxide-semiconductor field-effect transistor, a coin-cell battery, electrode wires and a software program to operate the device. Evaluation of the performance of the device in terms of battery lifetime and device functionality through bench and in vivo tests was conducted. The bench test revealed that this device can deliver continuous stimulation current pulses of strength [Formula: see text], width [Formula: see text], and frequency 130 Hz for over 22 days. The in vivo tests demonstrated that chronic stimulation of the nucleus accumbens (NAc) with this device significantly increased psychomotor activity, together with a dramatic reduction in anxiety-like behavior in the elevated zero-maze test.

  5. On superheavy elements, what did we achieve

    International Nuclear Information System (INIS)

    Armbruster, P.

    1986-03-01

    The properties of the heaviest isotopes are discussed using recent results on α-energies, halflives, and branchings between the different decay modes. From the data on α- and spontaneous fission halflives and absolute masses, fission barriers and barrier widths are deduced. Shell corrections of the heaviest nuclei are obtained and compared to recent calculations. The concept of superheavy elements is examined, and it is shown that the heaviest isotopes known must be classified 'superheavy'. The production cross sections are summarized and within the extra-push model the reduced fusion probabilities in the entrance channel are discussed. It is shown that besides nuclear structure effects in the collision partners are of importance. It is concluded that targets around 208 Pb give a double gain, on the one hand from the fact that fusion is relatively cold (1n- and 2n-channels), and on the other hand that the extra-push limitation is setting in later than the model predicts. The possibilities to make still heavier elements are restricted not by their groundstate instability but by the principal limitations of their production. (orig.)

  6. Structured-gate organic field-effect transistors

    International Nuclear Information System (INIS)

    Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

    2012-01-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

  7. Structured-gate organic field-effect transistors

    Science.gov (United States)

    Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2012-06-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

  8. Monte-Carlo simulation of the dynamic behavior of a CMOS inverter struck by a heavy ion

    International Nuclear Information System (INIS)

    Brisset, C.; Dollfus, P.; Hesto, P.

    1994-01-01

    The authors present a theoretical study using Monte-Carlo simulation of the behavior of a CMOS inverter struck by an ionizing particle. The inverter is made of two complementary enhancement-mode MOSFETs according to a SIMOX self-aligned technology with an effective gate length of 0.35 μm. The effect of the ionizing particle (heavy ion) is simulated by electron-hole pairs generation with an energy of 1 eV for each carrier. The authors studied the return to the steady-state of the device after a transient irradiation. Either the P-channel transistor or the N-channel transistor is irradiated, and the gate operating is considered in both cases of 0 V and 5 V input voltage. The irradiation of the off-state transistors induces a significant transient variation of the output voltage whereas irradiation of the on-state transistor has weak effects on the output. The return to the stationary regime, which is reached after about 50 ps in all irradiation cases, is achieved by evacuation of the carriers in excess through the different electrodes without trapping effect in the device

  9. In-situ SiN{sub x}/InN structures for InN field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

    2016-04-04

    Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

  10. Usage and conditions of radiation protection of nuclear meters in Brazil

    International Nuclear Information System (INIS)

    Guimarães, E.F.; Silva, F.C.A. da

    2017-01-01

    The industries of mining, pulp, oil, etc. which require a quality control in the processes, use the nuclear meters with sealed radioactive sources coupled to a radiation detector that generate accurate and fast answers regarding the level, thickness, density and humidity of different types of materials. Nuclear meters are classified as fixed or portable and use transmission, backscatter or reactive systems. As they use radioactive sources with various ranges of activities, they are classified by the International Atomic Energy Agency - AIEA as Category 3 and 4, of medium and low radiological risk, and must therefore have a suitable level of radiation protection for safe use in the installation. The Brazilian National Energy Commission - CNEN controls approximately 500 authorized facilities with nuclear meters. The paper technically describes the nuclear meters and the radiological protection procedures that must be followed for the safety of the IOEs (occupationally exposed individuals) and individuals from the public, based on the specific nuclear meter test program for CNEN radiation protection supervisor. The professionals who handle these nuclear meters should be aware of the radiological risk to their own protection and to individuals in the public. For safe operation with nuclear meters, a number of requirements must be observed according to the type and need of the installation

  11. Light requirements in microalgal photobioreactors. An overview of biophotonic aspects

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, Ana P. [Universidade Catolica Portuguesa, Porto (Portugal). CBQF/Escola Superior de Biotecnologia; Silva, Susana O. [Universidade Catolica Portuguesa, Porto (Portugal). CBQF/Escola Superior de Biotecnologia; INESC Porto, Porto (Portugal); Baptista, Jose M. [INESC Porto, Porto (Portugal); Universidade da Madeira, Funchal (Portugal). Centro de Competencia de Ciencias Exactas e de Engenharia; Malcata, F. Xavier [ISMAI - Instituto Superior da Maia, Avioso S. Pedro (Portugal); Universidade Nova de Lisboa, Oeiras (Portugal). Inst. de Tecnologia Quimica e Biologica

    2011-03-15

    In order to enhance microalgal growth in photobioreactors (PBRs), light requirement is one of the most important parameters to be addressed; light should indeed be provided at the appropriate intensity, duration, and wavelength. Excessive intensity may lead to photo-oxidation and -inhibition, whereas low light levels will become growth-limiting. The constraint of light saturation may be overcome via either of two approaches: increasing photosynthetic efficiency by genetic engineering, aimed at changing the chlorophyll antenna size; or increasing flux tolerance, via tailoring the photonic spectrum, coupled with its intensity and temporal characteristics. These approaches will allow an increased control over the illumination features, leading to maximization of microalgal biomass and metabolite productivity. This minireview briefly introduces the nature of light, and describes its harvesting and transformation by microalgae, as well as its metabolic effects under excessively low or high supply. Optimization of the photosynthetic efficiency is discussed under the two approaches referred to above; the selection of light sources, coupled with recent improvements in light handling by PBRs, are chronologically reviewed and critically compared. (orig.)

  12. Characterization of Leucaena (Leucaena leucephala) oil by direct analysis in real time (DART) ion source and gas chromatography

    International Nuclear Information System (INIS)

    Alam, M.; Alandis, N.M.; Sharmin, E.; Ahmad, N.; Alrayes, B.F.; Ali, D.

    2017-01-01

    For the first time, we report the characterization of triacylglycerols and fatty acids in Leucaena (Leucaena leucephala) oil [LUCO], an unexplored nontraditional non-medicinal plant belonging to the family Fabaceae. LUCO was converted to fatty acid methyl esters (FAMEs). We analyzed the triacylglycerols (TAGs) of pure LUCO and their FAMEs by time-of-flight mass spectrometry (TOF-MS) followed by multivariate analysis for discrimination among the FAMEs. Our investigations for the analysis of LUCO samples represent noble features of glycerides. A new type of ion source, coupled with high-resolution TOF-MS was applied for the comprehensive analysis of triacylglycerols. The composition of fatty acid based LUCO oil was studied using Gas Chromatography (GC-FID). The major fatty acid components of LUCO oil are linoleic acid (52.08%) oleic acid (21.26%), palmitic acid (7.91%) and stearic acid (6.01%). A metal analysis in LUCO was done by Inductively Coupled Plasma Mass Spectrometry (ICP-MS). The structural elucidation and thermal stability of LUCO were studied by FT-IR, 1H NMR, 13C NMR spectroscopic techniques and TGA-DSC, respectively. We also measured the cytotoxicity of LUCO [es

  13. The Young and the Restless: Revealing the Turbulent, Cloudy Nature of Young Brown Dwarfs and Exoplanets

    Science.gov (United States)

    Faherty, Jacqueline; Cruz, Kelle; Rice, Emily; Gagne, Jonathan; Marley, Mark; Gizis, John

    2018-05-01

    Emerging as an important insight into cool-temperature atmospheric physics is evidence for a correlation between enhanced clouds and youth. With this Spitzer Cycle 14 large GO program, we propose to obtain qualifying evidence for this hypothesis using an age calibrated sample of brown dwarf-exoplanet analogs recently discovered and characterized by team members. Using Spitzer's unparalleled ability to conduct uninterrupted, high-cadence observations over numerous hours, we will examine the periodic brightness variations at 3.5 microns, where clouds are thought to be most disruptive to emergent flux. Compared to older sources, theory predicts that younger or lower-surface gravity objects will have cooler brightness temperatures at 3.5 microns and larger peak to peak amplitude variations due to higher altitude, more turbulent clouds. Therefore we propose to obtain light curves for 26 sources that span L3-L8 spectral types (Teff 2500-1700 K), 20-130 Myr ages, and predicted 8-30 MJup masses. Comparing to the variability trends and statistics of field (3-5 Gyr) Spitzer Space Telescope General Observer Proposal equivalents currently being monitored by Spitzer, we will have unequivocal evidence for (or against) the turbulent atmospheric nature of younger sources. Coupling this Spitzer dataset with the multitude of spectral information we have on each source, the light curves obtained through this proposal will form the definitive library of data for investigating atmosphere dynamics (rotation rates, winds, storms, changing cloud structures) in young giant exoplanets and brown dwarfs.

  14. Renewable Energy Assessment Methodology for Japanese OCONUS Army Installations

    Energy Technology Data Exchange (ETDEWEB)

    Solana, Amy E.; Horner, Jacob A.; Russo, Bryan J.; Gorrissen, Willy J.; Kora, Angela R.; Weimar, Mark R.; Hand, James R.; Orrell, Alice C.; Williamson, Jennifer L.

    2010-08-30

    Since 2005, Pacific Northwest National Laboratory (PNNL) has been asked by Installation Management Command (IMCOM) to conduct strategic assessments at selected US Army installations of the potential use of renewable energy resources, including solar, wind, geothermal, biomass, waste, and ground source heat pumps (GSHPs). IMCOM has the same economic, security, and legal drivers to develop alternative, renewable energy resources overseas as it has for installations located in the US. The approach for continental US (CONUS) studies has been to use known, US-based renewable resource characterizations and information sources coupled with local, site-specific sources and interviews. However, the extent to which this sort of data might be available for outside the continental US (OCONUS) sites was unknown. An assessment at Camp Zama, Japan was completed as a trial to test the applicability of the CONUS methodology at OCONUS installations. It was found that, with some help from Camp Zama personnel in translating and locating a few Japanese sources, there was relatively little difficulty in finding sources that should provide a solid basis for conducting an assessment of comparable depth to those conducted for US installations. Project implementation will likely be more of a challenge, but the feasibility analysis will be able to use the same basic steps, with some adjusted inputs, as PNNL’s established renewable resource assessment methodology.

  15. High throughput screening of phenoxy carboxylic acids with dispersive solid phase extraction followed by direct analysis in real time mass spectrometry.

    Science.gov (United States)

    Wang, Jiaqin; Zhu, Jun; Si, Ling; Du, Qi; Li, Hongli; Bi, Wentao; Chen, David Da Yong

    2017-12-15

    A high throughput, low environmental impact methodology for rapid determination of phenoxy carboxylic acids (PCAs) in water samples was developed by combing dispersive solid phase extraction (DSPE) using velvet-like graphitic carbon nitride (V-g-C 3 N 4 ) and direct analysis in real time mass spectrometry (DART-MS). Due to the large surface area and good dispersity of V-g-C 3 N 4 , the DSPE of PCAs in water was completed within 20 s, and the elution of PCAs was accomplished in 20 s as well using methanol. The eluents were then analyzed and quantified using DART ionization source coupled to a high resolution mass spectrometer, where an internal standard was added in the samples. The limit of detection ranged from 0.5 ng L -1 to 2 ng L -1 on the basis of 50 mL water sample; the recovery 79.9-119.1%; and the relative standard deviation 0.23%-9.82% (≥5 replicates). With the ease of use and speed of DART-MS, the whole protocol can complete within mere minutes, including sample preparation, extraction, elution, detection and quantitation. The methodology developed here is simple, fast, sensitive, quantitative, requiring little sample preparation and consuming significantly less toxic organic solvent, which can be used for high throughput screening of PCAs and potentially other contaminants in water. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Application of source biasing technique for energy efficient DECODER circuit design: memory array application

    Science.gov (United States)

    Gupta, Neha; Parihar, Priyanka; Neema, Vaibhav

    2018-04-01

    Researchers have proposed many circuit techniques to reduce leakage power dissipation in memory cells. If we want to reduce the overall power in the memory system, we have to work on the input circuitry of memory architecture i.e. row and column decoder. In this research work, low leakage power with a high speed row and column decoder for memory array application is designed and four new techniques are proposed. In this work, the comparison of cluster DECODER, body bias DECODER, source bias DECODER, and source coupling DECODER are designed and analyzed for memory array application. Simulation is performed for the comparative analysis of different DECODER design parameters at 180 nm GPDK technology file using the CADENCE tool. Simulation results show that the proposed source bias DECODER circuit technique decreases the leakage current by 99.92% and static energy by 99.92% at a supply voltage of 1.2 V. The proposed circuit also improves dynamic power dissipation by 5.69%, dynamic PDP/EDP 65.03% and delay 57.25% at 1.2 V supply voltage.

  17. 2.5 Gb/s laser-driver GaAS IC

    DEFF Research Database (Denmark)

    Riishøj, Jesper

    1993-01-01

    A laser-diode driver GaAs IC incorporating an optional NRZ/RZ (non-return-to-zero/return-to-zero) conversion facility, having ECL (emitter-coupled logic) and SCFL (source-coupled FET logic)-compatible inputs and providing a 0-60-mA adjustable output current into a 50-Ω/5-V termination at bit rates...... obtained. To verify laser driving performance a back-to-back optical-fiber transmission experiment was performed, giving good optical eye diagrams at 2.5 Gb/s. The electrooptical interplay between laser-diode driver and laser-diode has been demonstrated using SPICE simulations...... up to 2 Gb/s NRZ and maintaining a clear eye opening of 50 mA at 2.5 Gb/s NRZ bit rate has been designed, using a commercial 1-μm gate-length (Fτ=12 GHz) GaAs MESFET foundry service. The high maximum output current is obtained by implementing the output driver as a cascode differential amplifier...

  18. Analytical strategies for controlling polysorbate-based nanomicelles in fruit juice.

    Science.gov (United States)

    Krtkova, Veronika; Schulzova, Vera; Lacina, Ondrej; Hrbek, Vojtech; Tomaniova, Monika; Hajslova, Jana

    2014-06-01

    This study focused on the detection and quantification of organic micelle-type nanoparticles (NPs) with polysorbate components (polysorbate 20 and polysorbate 80) in their micelle shells that could be used to load biologically active compounds into fruit juice. Several advanced analytical techniques were applied in the stepwise method development strategy used. In the first phase, a system consisting of ultrahigh-performance liquid chromatography employing a size exclusion column coupled with an evaporative light scattering detector (UHPLC-SEC-ELSD) was used for the fractionation of micelle assemblies from other, lower molecular weight sample components. The limit of detection (LoD) of these polysorbate micelles in spiked apple juice was 500 μg mL(-1). After this screening step, mass spectrometric (MS) detection was utilized to confirm the presence of polysorbates in the detected micelles. Two alternative MS techniques were tested: (i) ambient high-resolution mass spectrometry employing a direct analysis in real time ion source coupled with an Orbitrap MS analyzer (DART-Orbitrap MS) enabled fast and simple detection of the polysorbates present in the samples, with a lowest calibration level (LCL) of 1000 μg mL(-1); (ii) ultrahigh-performance reversed-phase liquid chromatography coupled with high-resolution time-of-flight mass spectrometry (UHPLC-HRTOF-MS) provided highly selective and sensitive detection and quantification of polysorbates with an LCL of 0.5 μg mL(-1).

  19. Anaerobic oxidation of 2-chloroethanol under denitrifying conditions by Pseudomonas stutzeri strain JJ.

    Science.gov (United States)

    Dijk, J A; Stams, A J M; Schraa, G; Ballerstedt, H; de Bont, J A M; Gerritse, J

    2003-11-01

    A bacterium that uses 2-chloroethanol as sole energy and carbon source coupled to denitrification was isolated from 1,2-dichloroethane-contaminated soil. Its 16 S rDNA sequence showed 98% similarity with the type strain of Pseudomonas stutzeri (DSM 5190) and the isolate was tentatively identified as Pseudomonas stutzeri strain JJ. Strain JJ oxidized 2-chloroethanol completely to CO(2) with NO(3)(- )or O(2) as electron acceptor, with a preference for O(2) if supplied in combination. Optimum growth on 2-chloroethanol with nitrate occurred at 30 degrees C with a mu(max) of 0.14 h(-1) and a yield of 4.4 g protein per mol 2-chloroethanol metabolized. Under aerobic conditions, the mu(max) was 0.31 h(-1). NO(2)(-) also served as electron acceptor, but reduction of Fe(OH)(3), MnO(2), SO(4)(2-), fumarate or ClO(3)(-) was not observed. Another chlorinated compound used as sole energy and carbon source under aerobic and denitrifying conditions was chloroacetate. Various different bacterial strains, including some closely related Pseudomonas stutzeri strains, were tested for their ability to grow on 2-chloroethanol as sole energy and carbon source under aerobic and denitrifying conditions, respectively. Only three strains, Pseudomonas stutzeri strain LMD 76.42, Pseudomonas putida US2 and Xanthobacter autotrophicus GJ10, grew aerobically on 2-chloroethanol. This is the first report of oxidation of 2-chloroethanol under denitrifying conditions by a pure bacterial culture.

  20. Advanced system for separation of rare-earth fission products

    International Nuclear Information System (INIS)

    Baker, J.D.; Gehrke, R.J.; Greenwood, R.C.; Meikrantz, D.H.

    1982-01-01

    A microprocessor-controlled radiochemical separation system has been further advanced to separate individual rare-earth elements from mixed fission products in times of a few minutes. The system was composed of an automated chemistry system fed by two approximately 300 μg 252 Cf sources coupled directly by a He-jet to transport the fission products. Chemical separations were performed using two high performance liquid chromatography columns coupled in series. The first column separated the rare-earth group by extraction chromatography using dihexyldiethylcarbamoylmethylphosphonate (DHDECMP) adsorbed on Vydac C 8 resin. The second column isolated the individual rare-earth elements by cation exchange chromatography using Aminex A-9 resin with α-hydroxyisobutyric acid (α-HIBA) as the eluent. Significant results, which have been obtained to date with this advanced system, are the identification of several new neutron-rich rare-earth isotopes including 155 Pm (T=48+-4 s) and 163 Gd (T=68+-3 s). In addition, a half-life of 41+-4 s is reported for 160 Eu. (author)

  1. Using fiber optic sensors to protect intake, outflow, and other environmentally exposed openings

    International Nuclear Information System (INIS)

    Tennefoss, M.

    1991-01-01

    This paper reports on the protection of opening that are exposed to the environment in nuclear facilities which presents an almost overwhelming engineering challenge. Intakes and outflows must permit the passage of large volumes of air or water without impeding their flow, and they are often exposed to corrosive salt and chemicals. An intrusion detection sensor that is intended to protect these openings must be capable of operating reliably under environmentally harsh conditions, and at the same time either provide a physical delay barrier or attach to an existing barrier. A new fiber optic sensor technology has now been developed specifically for protecting environmentally exposed openings. This sensor uses a fiber optic cable embedded in a neoprene rubber frame which is reinforced with Kevlar threads or braided steel cable. The sensor is configured in a mesh pattern with openings sufficiently large to permit air or water to flow unimpeded, but small enough to prevent entry. A bigger optic light source couples a supervisory light to the cable, and any break of the cable results in an alarm. Excellent results have been obtained with both small and large openings, including applications in which the sensor is totally submerged. The reinforcing cable provides an excellent delay barrier

  2. Cold moderator test facilities working group

    International Nuclear Information System (INIS)

    Bauer, Guenter S.; Lucas, A. T.

    1997-09-01

    The working group meeting was chaired by Bauer and Lucas.Testing is a vital part of any cold source development project. This applies to specific physics concept verification, benchmarking in conjunction with computer modeling and engineering testing to confirm the functional viability of a proposed system. Irradiation testing of materials will always be needed to continuously extend a comprehensive and reliable information database. An ever increasing worldwide effort to enhance the performance of reactor and accelerator based neutron sources, coupled with the complexity and rising cost of building new generation facilities, gives a new dimension to cold source development and testing programs. A stronger focus is now being placed on the fine-tuning of cold source design to maximize its effectiveness in fully exploiting the facility. In this context, pulsed spallation neutron sources pose an extra challenge due to requirements regarding pulse width and shape which result from a large variety of different instrument concepts. The working group reviewed these requirements in terms of their consequences on the needs for testing equipment and compiled a list of existing and proposed facilities suitable to carry out the necessary development work.

  3. Oxychlorine Detections on Mars: Implications for Cl Cycling

    Science.gov (United States)

    Sutter, B.; Jackson, W. A.; Ming, D. W.; Archer, P. D.; Stern, J. C.; Mahaffy, P. R.; Gellert, R.

    2016-01-01

    The Sample Analysis at Mars (SAM) instrument has detected evolved O2 and HCl indicating the presence of perchlorate and/or chlorate (oxychlorine) in all 11 sediments analyzed to date. The hyperarid martian climate is believed to have allowed accumulation of oxychlorine and assumed chloride contents similar to those in hyperarid terrestrial settings. The linear correlation of oxychlorine and chloride of Gale Crater sediments is low (r (sup 2) equals 0.64). Correlations present in hyperarid Antarctica and the Atacama Desert are attributed to unaltered atmospheric source coupled with minimal redox cycling by biological activity. Terrestrial semi-arid to arid settings have low correlations similar to Gale Crater and are attributed to additional inputs of Cl minus from sea salt, dust, and/or proximal playa settings, and possible reduction of oxychlorine phases during wetter periods. While microbiological processes could contribute to low oxychlorine/chloride correlations on Mars, several abiotic mechanisms are more likely, such as changing oxychlorine production rates with time and/or post-depositional geochemical redox processes that altered the Gale Crater oxychlorine and chloride contents.

  4. Solid - solid and solid - liquid phase transitions of iron and iron alloys under laser shock compression

    Science.gov (United States)

    Harmand, M.; Krygier, A.; Appel, K.; Galtier, E.; Hartley, N.; Konopkova, Z.; Lee, H. J.; McBride, E. E.; Miyanishi, K.; Nagler, B.; Nemausat, R.; Vinci, T.; Zhu, D.; Ozaki, N.; Fiquet, G.

    2017-12-01

    An accurate knowledge of the properties of iron and iron alloys at high pressures and temperatures is crucial for understanding and modelling planetary interiors. While Earth-size and Super-Earth Exoplanets are being discovered in increasingly large numbers, access to detailed information on liquid properties, melting curves and even solid phases of iron and iron at the pressures and temperatures of their interiors is still strongly limited. In this context, XFEL sources coupled with high-energy lasers afford unique opportunities to measure microscopic structural properties at far extreme conditions. Also the achievable time resolution allows the shock history and phase transition mechanisms to be followed during laser compression, improving our understanding of the high pressure and high strain experiments. Here we present recent studies devoted to investigate the solid-solid and solid-liquid transition in laser-shocked iron and iron alloys (Fe-Si, Fe-C and Fe-O alloys) using X-ray diffraction and X-ray diffuse scattering. Experiment were performed at the MEC end-station of the LCLS facility at SLAC (USA). Detection of the diffuse scattering allowed the identification of the first liquid peak position along the Hugoniot, up to 4 Mbar. The time resolution shows ultrafast (between several tens and several hundreds of picoseconds) solid-solid and solid-liquid phase transitions. Future developments at XFEL facilities will enable detailed studies of the solid and liquid structures of iron and iron alloys as well as out-of-Hugoniot studies.

  5. A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process

    Science.gov (United States)

    Wang, Jiafeng; Fan, Xiangning; Shi, Xiaoyang; Wang, Zhigong

    2017-12-01

    With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source-coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. Δ-Σ modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18μm CMOS process, the fractional-N frequency divider occupies a chip area of 1130 × 510 μm2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.

  6. A closed loop control strategy for a frequency-only converter with high efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Benaboud, A.; Rufer, A. [Ecole Polytechnique Federale de Lausanne (Switzerland). Industrial Electronics Lab

    2007-07-01

    Three-level neutral point clamped (NPC) inverters are used for medium voltage applications. They allow the output voltage to spread on 3 levels, thus increasing it above the voltage limits of classical semiconductors. This paper presented an efficient new control strategy for a three-level NPC inverter that can be used for high power applications. Many electric power generators use gas turbines as power sources, coupled through a mechanical gearbox in order to adapt their synchronous speed to the optimal rotation speed of the turbine. Replacing the mechanical gearbox with a flexible electronic solution would be more efficient. The efficiency of the new control strategy can be attributed to the use of square-wave modulation, whose key advantage is the quasi absence of switching losses. In this modulation, only the frequency can be adapted between the input and the output voltages. However, their magnitudes are not freely controllable. The active and reactive powers produced can be controlled by the generator's excitation, as well as both the angle shift between the generator's and rectifier's voltages and between the inverter's and network's voltages. The capabilities of the proposed control strategy were highlighted during simulation of different operating points. 7 refs., 18 figs.

  7. Ultra-fine metal gate operated graphene optical intensity modulator

    Science.gov (United States)

    Kou, Rai; Hori, Yosuke; Tsuchizawa, Tai; Warabi, Kaori; Kobayashi, Yuzuki; Harada, Yuichi; Hibino, Hiroki; Yamamoto, Tsuyoshi; Nakajima, Hirochika; Yamada, Koji

    2016-12-01

    A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al2O3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.

  8. Catchment heterogeneity controls emergent archetype concentration-discharge relationships

    Science.gov (United States)

    Musolff, A.; Fleckenstein, J. H.; Rao, P. S.; Jawitz, J. W.

    2017-12-01

    Relationships between in-stream dissolved solute concentrations (C) and discharge (Q) are often-used indicators of catchment-scale processes and their interference with human activities. Here we analyze observational C-Q relationships from 61 catchments and 8 different solutes across a wide range of land-uses and discharge regimes. This analysis is combined with a parsimonious stochastic modeling approach to test how C-Q relationships arise from spatial heterogeneity in catchment solute sources coupled with different timescales of biogeochemical reactions. The observational data exhibit archetypical dilution, enrichment, and constant C-Q patterns. Moreover, with land-use intensification we find decreasing C variability relative to Q variability (chemostatic export regime). Our model indicates that the dominant driver of emergent C-Q patterns was structured heterogeneity of solute sources implemented as correlation of source concentration to travel time. Regardless of the C-Q pattern, with decreasing source heterogeneity we consistently find lower variability in C than in Q and a dominance of chemostatic export regimes. Here, the variance in exported loads is determined primarily by variance of Q. We conclude that efforts to improve stream water quality and ecological integrity in intensely managed catchments should lead away from landscape homogenization by introducing structured source heterogeneity. References: Musolff, A., J. H. Fleckenstein, P. S. C. Rao, and J. W. Jawitz (2017), Emergent archetype patterns of coupled hydrologic and biogeochemical responses in catchments, Geophys. Res. Lett., 44(9), 4143-4151, doi: 10.1002/2017GL072630.

  9. bank as an energy storage device

    Directory of Open Access Journals (Sweden)

    Jurasz Jakub

    2017-01-01

    Full Text Available Renewable energy sources (RES are not the backbone of the Polish electricity generation sector. Even though the use of such resources is beneficial in terms of, e.g., CO2 emissions, current policy seems to create more and more obstacles hindering their further development on an industrial scale. The present paper proposes a simulation model of a hybrid micro power source coupled with a battery bank supplying a small group of households with an annual energy demand of 30 MWh. Results indicate that, for the selected site, a power source consisting of a wind turbine – 8kW, photovoltaic array – 9kW, water turbine – 2kW and 256 kWh energy storage capacity of a battery bank can be a reliable energy source. However, due to the intermittent nature of the selected energy sources there is still a need to remain on-grid in order to avoid excessive energy surpluses (in the case of an oversized system and deficits. This work opens several interesting directions for future studies, which will be discussed in later sections.

  10. Development of target ion source systems for radioactive beams at GANIL

    Energy Technology Data Exchange (ETDEWEB)

    Bajeat, O., E-mail: bajeat@ganil.fr [GANIL, BP 55027, 14076 CAEN Cedex 05 (France); Delahaye, P. [GANIL, BP 55027, 14076 CAEN Cedex 05 (France); Couratin, C. [GANIL, BP 55027, 14076 CAEN Cedex 05 (France); LPC Caen, 6 bd Maréchal Juin, 14050 CAEN Cedex (France); Dubois, M.; Franberg-Delahaye, H.; Henares, J.L.; Huguet, Y.; Jardin, P.; Lecesne, N.; Lecomte, P.; Leroy, R.; Maunoury, L.; Osmond, B.; Sjodin, M. [GANIL, BP 55027, 14076 CAEN Cedex 05 (France)

    2013-12-15

    Highlights: • For Spiral 1, a febiad ion source has been connected to a graphite target. • For Spiral 2, an oven made with a carbon resistor is under development. • We made some measurement of effusion in the Spiral 2 target. • A laser ion source is under construction. -- Abstract: The GANIL facility (Caen, France) is dedicated to the acceleration of heavy ion beams including radioactive beams produced by the Isotope Separation On-Line (ISOL) method at the SPIRAL1 facility. To extend the range of radioactive ion beams available at GANIL, using the ISOL method two projects are underway: SPIRAL1 upgrade and the construction of SPIRAL2. For SPIRAL1, a new target ion source system (TISS) using the VADIS FEBIAD ion source coupled to the SPIRAL1 carbon target will be tested on-line by the end of 2013 and installed in the cave of SPIRAL1 for operation in 2015. The SPIRAL2 project is under construction and is being design for using different production methods as fission, fusion or spallation reactions to cover a large area of the chart of nuclei. It will produce among others neutron rich beams obtained by the fission of uranium induced by fast neutrons. The production target made from uranium carbide and heated at 2000 °C will be associated with several types of ion sources. Developments currently in progress at GANIL for each of these projects are presented.

  11. Constraints due to the production of radioactive ion beams in the SPIRAL project

    International Nuclear Information System (INIS)

    Leroy, R.; Huguet, Y.; Jardin, P.; Marry, C.; Pacquet, J.Y.; Villari, A.C.C.

    1997-01-01

    The radioactive ion beams that will be delivered by the SPIRAL facility will be produced by the interaction of a stable high energy and high intensity primary ion beam delivered by the GANIL cyclotrons with a carbon target heated to 2000 deg C. During this interaction, some radioactive atoms will be created and will diffuse out of the target before entering into an electron cyclotron resonance ion source where they will be ionized and extracted. The production of radioactive ion beams with this method implies high radiation fields that activate and can damage materials located in the neighborhood of the target. Therefore, the production system which is composed of the permanent magnet ECR ion source coupled to a graphite target will be changed after two weeks of irradiation. As this ensemble will be very radioactive, this operation has to be supervised by remote control. The radiation levels around the target-ion source system and a detailed description of the different precautions that have been taken for safety and for prevention of contamination and irradiation are presented. (author)

  12. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  13. Aerosol Vacuum-Assisted Plasma Ionization (Aero-VaPI) Coupled to Ion Mobility-Mass Spectrometry

    Science.gov (United States)

    Blair, Sandra L.; Ng, Nga L.; Zambrzycki, Stephen C.; Li, Anyin; Fernández, Facundo M.

    2018-02-01

    In this communication, we report on the real-time analysis of organic aerosol particles by Vacuum-assisted Plasma Ionization-Mass Spectrometry (Aero-VaPI-MS) using a home-built VaPI ion source coupled to a Synapt G2-S HDMS ion mobility-mass spectrometry (IM-MS) system. Standards of organic molecules of interest in prebiotic chemistry were used to generate aerosols. Monocaprin and decanoic acid aerosol particles were successfully detected in both the positive and negative ion modes, respectively. A complex aerosol mixture of different sizes of polymers of L-malic acid was also examined through ion mobility (IM) separations, resulting in the detection of polymers of up to eight monomeric units. This noncommercial plasma ion source is proposed as a low cost alternative to other plasma ionization platforms used for aerosol analysis, and a higher-performance alternative to more traditional aerosol mass spectrometers. VaPI provides robust online ionization of organics in aerosols without extensive ion activation, with the coupling to IM-MS providing higher peak capacity and excellent mass accuracy. [Figure not available: see fulltext.

  14. On periodically driven AdS/CFT

    CERN Document Server

    Auzzi, Roberto; Gudnason, Sven Bjarke; Rabinovici, Eliezer

    2013-01-01

    We use the AdS/CFT correspondence to study a thermally isolated conformal field theory in four dimensions which undergoes a repeated deformation by an external periodic time-dependent source coupled to an operator of dimension Delta. The initial state of the theory is taken to be at a finite temperature. We compute the energy dissipated in the system as a function of the frequency and of the dimension Delta of the perturbing operator. This is done in the linear response regime. In order to study the details of thermalization in the dual field theory, the leading-order backreaction on the AdS black brane metric is computed. The evolution of the event and the apparent horizons is monitored; the increase of area in each cycle coincides with the increase in the equilibrium entropy corresponding to the amount of energy dissipated. The time evolution of the entanglement entropy of a spherical region and that of the two-points function of a probe operator with a large dimension are also inspected; we find a delay in...

  15. Advanced illumination control algorithm for medical endoscopy applications

    Science.gov (United States)

    Sousa, Ricardo M.; Wäny, Martin; Santos, Pedro; Morgado-Dias, F.

    2015-05-01

    CMOS image sensor manufacturer, AWAIBA, is providing the world's smallest digital camera modules to the world market for minimally invasive surgery and one time use endoscopic equipment. Based on the world's smallest digital camera head and the evaluation board provided to it, the aim of this paper is to demonstrate an advanced fast response dynamic control algorithm of the illumination LED source coupled to the camera head, over the LED drivers embedded on the evaluation board. Cost efficient and small size endoscopic camera modules nowadays embed minimal size image sensors capable of not only adjusting gain and exposure time but also LED illumination with adjustable illumination power. The LED illumination power has to be dynamically adjusted while navigating the endoscope over changing illumination conditions of several orders of magnitude within fractions of the second to guarantee a smooth viewing experience. The algorithm is centered on the pixel analysis of selected ROIs enabling it to dynamically adjust the illumination intensity based on the measured pixel saturation level. The control core was developed in VHDL and tested in a laboratory environment over changing light conditions. The obtained results show that it is capable of achieving correction speeds under 1 s while maintaining a static error below 3% relative to the total number of pixels on the image. The result of this work will allow the integration of millimeter sized high brightness LED sources on minimal form factor cameras enabling its use in endoscopic surgical robotic or micro invasive surgery.

  16. A framework for the organization and delivery of systemic treatment.

    Science.gov (United States)

    Vandenberg, T; Coakley, N; Nayler, J; Degrasse, C; Green, E; Mackay, J A; McLennan, C; Smith, A; Wilcock, L; Trudeau, M E

    2009-01-01

    Increasing systemic treatment and shortages of oncology professionals in Canada require innovative approaches to the safe and effective delivery of intravenous (IV) cancer treatment. We conducted a systematic review of the clinical and scientific literature, and an environmental scan of models in Canada, the United Kingdom, Australia, and New Zealand. We then developed a framework for the organization and delivery of IV systemic treatment. The systematic review covered the medline, embase, cinahl, and HealthStar databases. The environmental scan retrieved published and unpublished sources, coupled with a free key word search using the Google search engine. The Systemic Treatment Working Group reviewed the evidence and developed a draft framework using evidence-based analysis, existing recommendations from various jurisdictions, and expert opinion based on experience and consensus. The draft was assessed by Ontario stakeholders and reviewed and approved by Cancer Care Ontario. The poor quantity and quality of the evidence necessitated a consensus-derived model. That model comprises four levels of care determined by a regional systemic treatment program and three integrated structures (integrated cancer programs, affiliate institutions, and satellite institutions), each with a defined scope of practice and a specific organizational framework. New models of care are urgently required beyond large centres, particularly in geographically remote or rural areas. Despite limited applicable evidence, the development and successful implementation of this framework is intended to create sustainable, accessible, quality care and to measurably improve patient outcomes.

  17. Status report on a dc 130-mA, 75-keV proton injector

    International Nuclear Information System (INIS)

    Sherman, J.; Arvin, A.; Hodgkins, D.

    1997-01-01

    A 110-mA, 75-keV dc proton injector is being developed at Los Alamos. We use a microwave proton source coupled to a two solenoid, space-charge neutralized, low-energy beam transport (LEBT) system. The ion source produces 110-mA proton current at 75 keV using 600 - 800 W of 2.45 GHz input discharge power. Typical proton fraction is 85-90% of the total extracted ion current, and the rms normalized beam emittance after transport through a prototype 2.1 m LEBT is 0.20 (πmm-mrad). Beam space-charge neutralization is measured to be > 98% which enables the solenoid magnetic transport to successfully match the injector beam into a radio-frequency quadrupole (RFQ). Beam simulations indicate small emittance growth in the proposed 2.8 m low-energy demonstration accelerator (LEDA) LEBT. The LEBT also contains beam diagnostics, steering, and a beam deflector for variable duty factor and accelerator fast protect functions. The injector computer controls and reliability status are also discussed

  18. A Compact 5 MeV S-Band Electron Linac Based X-Ray Source for Industrial Radiography

    CERN Document Server

    Auditore, Lucrezia; De Pasquale, Domenico; Emanuele, Umberto; Italiano, Antonio; Trifirò, Antonio; Trimarchi, Marina

    2005-01-01

    A compact and reliable X-ray source, based on a 5 MeV, 1 kW, S-band electron linac, has been set up at the Dipartimento di Fisica, Universit\\'a di Messina. This source, coupled with a GOS scintillator screen and a CCD camera, represents an innovative transportable system for industrial radiography and X-ray tomography. Optimization of the parameters influencing the e-gamma conversion and the X-ray beam characteristics have been studied by means of the MCNP-4C2 code. The converter choice is the result of the study of the e-gamma conversion performances for different materials and materials thicknesses. Also the converter position with respect to the linac exit window was studied. The chosen converter consists in a Ta-Cu target inserted close to the linac window. The Cu layer acts as a filter both on the electrons from the source and on the low energy X-rays. The X-ray beam angular profile was studied by means of GafChromic films with and without collimation. In the final source project, a collimation system pr...

  19. Direct Visualization of Neurotransmitters in Rat Brain Slices by Desorption Electrospray Ionization Mass Spectrometry Imaging (DESI - MS)

    Science.gov (United States)

    Fernandes, Anna Maria A. P.; Vendramini, Pedro H.; Galaverna, Renan; Schwab, Nicolas V.; Alberici, Luciane C.; Augusti, Rodinei; Castilho, Roger F.; Eberlin, Marcos N.

    2016-12-01

    Mass spectrometry imaging (MSI) of neurotransmitters has so far been mainly performed by matrix-assisted laser desorption/ionization (MALDI) where derivatization reagents, deuterated matrix and/or high resolution, or tandem MS have been applied to circumvent problems with interfering ion peaks from matrix and from isobaric species. We herein describe the application of desorption electrospray ionization mass spectrometry imaging (DESI)-MSI in rat brain coronal and sagittal slices for direct spatial monitoring of neurotransmitters and choline with no need of derivatization reagents and/or deuterated materials. The amino acids γ-aminobutyric (GABA), glutamate, aspartate, serine, as well as acetylcholine, dopamine, and choline were successfully imaged using a commercial DESI source coupled to a hybrid quadrupole-Orbitrap mass spectrometer. The spatial distribution of the analyzed compounds in different brain regions was determined. We conclude that the ambient matrix-free DESI-MSI is suitable for neurotransmitter imaging and could be applied in studies that involve evaluation of imbalances in neurotransmitters levels.

  20. A current-mode multi-valued adder circuit for multi-operand addition

    Science.gov (United States)

    Cini, Ugur; Morgül, Avni

    2011-06-01

    Static CMOS logic circuits have a robust working performance. However, they generate excessive noise when the switching activity is high. Source-coupled logic (SCL) circuits can be an alternative for analogue-friendly design where constant current is driven from the power supply, independent of the switching activity of the circuit. In this work, a compact current-mode multi-operand adder cell, similar to SCL circuits, is designed. The circuit adds up seven input operands using a technique similar to the (7, 3) counter circuit, but with less active elements when compared to a conventional binary (7, 3) counter. The design has comparable power and delay characteristics compared to conventional SCL implementation. The proposed circuit requires only 69 transistors, where 96 transistors are required for the equivalent SCL implementation. Hence the circuit saves on both transistor count and interconnections. The design is optimised for low power operation of high performance arithmetic circuits. The proposed multi-operand adder circuit is designed in UMC 0.18 µm technology. As an example of application, an 8 × 8 bit multiplier circuit is designed and simulated using HSPICE.

  1. Profiling an electrospray plume by laser-induced fluorescence and Fraunhofer diffraction combined to mass spectrometry: influence of size and composition of droplets on charge-state distributions of electrosprayed proteins.

    Science.gov (United States)

    Girod, Marion; Dagany, Xavier; Boutou, Véronique; Broyer, Michel; Antoine, Rodolphe; Dugourd, Philippe; Mordehai, Alex; Love, Craig; Werlich, Mark; Fjeldsted, John; Stafford, George

    2012-07-14

    We investigated how physico-chemical properties of charged droplets are affected by the electrospray process, using simultaneous in situ measurements by laser-induced fluorescence (LIF), Fraunhofer diffraction and mass spectrometry. For this purpose, we implemented a laser-induced-fluorescence profiling setup in conjunction with a fast, high-resolution particle sizing scheme on a modified Agilent Jet Stream electrospray source coupled to a single quadrupole mass analyser. The optical setup permits us to profile the solvent fractionation and the size of the droplets as they evaporate in an electrospray plume by measuring both the angular scattering pattern and emission spectra of a solvatochromic fluorescent dye. Mass spectra are recorded simultaneously. These mass spectrometry and optical spectroscopy investigations allow us to study the relation between the observed charge-state distributions of protein anions and physico-chemical properties of evaporating droplets in the spray plume. By mixing water with methanol, a refolding of cytochrome C is observed as the water percentage increases in the plume due to the preponderant evaporation of volatile methanol.

  2. Use of a 55Fe radioisotope for the determination of titanium in laterite samples via energy dispersive X-ray fluorescence

    International Nuclear Information System (INIS)

    La Brecque, J.J.

    1978-01-01

    A rapid method for the determination of titanium in geochemical samples using a 55 Fe radioisotope at the extraction source coupled to a Si(Li) detector and a PDP-11/05 computer is described. A representative sample of about 200 g is ground in a large mortar and pestle before it is passed through a 20 mesh sieve. The 20 mesh sample is mixed thoroughly and quartered, then a 5 g subsample is passed completely through a 150 mesh sieve. Both the sample and internal standard K 2 Cr 2 O 7 are dried at 105 deg C before a 250 mg portion of each is weighed and thoroughly mixed. Three 50-100 mg portions are placed in separate sample holders. The sample holder is a simple card with a 1.5 cm diameter opening in which the sample is inserted between two layers of Magic Scotch tape. The relative standard deviation for a thin sample about 100 mg in weight is less than 4% and it is achieved in a fluorescent time of 100 sec. Data are given for the use of two different internal standards, KBrO 2 and K 2 Cr 2 O 7 , the latter being more precise. The values for five international reference standards determined by this method are in agreement with the reported values. (T.G.)

  3. Sensitivity Analysis of Deviation Source for Fast Assembly Precision Optimization

    Directory of Open Access Journals (Sweden)

    Jianjun Tang

    2014-01-01

    Full Text Available Assembly precision optimization of complex product has a huge benefit in improving the quality of our products. Due to the impact of a variety of deviation source coupling phenomena, the goal of assembly precision optimization is difficult to be confirmed accurately. In order to achieve optimization of assembly precision accurately and rapidly, sensitivity analysis of deviation source is proposed. First, deviation source sensitivity is defined as the ratio of assembly dimension variation and deviation source dimension variation. Second, according to assembly constraint relations, assembly sequences and locating, deviation transmission paths are established by locating the joints between the adjacent parts, and establishing each part’s datum reference frame. Third, assembly multidimensional vector loops are created using deviation transmission paths, and the corresponding scalar equations of each dimension are established. Then, assembly deviation source sensitivity is calculated by using a first-order Taylor expansion and matrix transformation method. Finally, taking assembly precision optimization of wing flap rocker as an example, the effectiveness and efficiency of the deviation source sensitivity analysis method are verified.

  4. Effect of the inter-block spacing on the thermal performance of a PCM based heat sink

    Energy Technology Data Exchange (ETDEWEB)

    Faraji, M.; El Qarnia, H. [Cadi Ayyad Univ., Marrakech (Morocco). Faculte des sciences Semlalia, Dept. de physique, Laboratoire de mecanique des fluides et d' energetique; El Khadir, L. [Cadi Ayyad Univ., Marrakech (Morocco). Faculte des sciences Semlalia, Dept. de physique, Laboratoire d' tomatique de l' Environnement et Procedes de Transferts

    2010-07-01

    Advanced electronic devices require efficient thermal control systems. Heat transfer analysis of such systems is challenging because of constraints regarding space limitations, power consumption and noise level. This study considered the problem of melting and natural convection in a rectangular enclosure heated with 3 heat sources with a constant and uniform volumetric heat generation. The heat sources were protruding and mounted on a vertical conducting plate. Conjugate conduction in a plate and heat sources coupled with natural convection and melting process were examined in an effort to determine the effects of the inter-blocks spacing ratio on the thermal performance of the cooling PCM-heat sink. The percentage contribution of substrate heat conduction on the total removed heat from heat sources was also investigated. Correlations were derived for the non- dimensional secured working time and the corresponding melt fraction. In order to investigate the thermal behaviour of the proposed heat sink, a mathematical model was developed based on the mass, momentum and energy conservation equations. The results revealed that for lower inter-blocks spacing, the dimensionless secured working time needed by the chips to reach the critical temperature was maximized. The highest inter-blocks spacing ratio provoked a sudden rise in chip temperatures and thus reduced the dimensionless secured working time. It was concluded that this approach can be used in the design of PCM-based cooling systems. 9 refs., 2 tabs., 4 figs.

  5. Preliminary conceptual design of target system. Pt. 1. System configuration

    Energy Technology Data Exchange (ETDEWEB)

    Hino, Ryutaro; Haga, Katsuhiro; Kaminaga, Masanori [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    1997-07-01

    In the 21st century, neutron is expected to play a very important role in the fields of structural biology, nuclear physics, material science if a very high-intensity neutron source will be built because of its superior nature as an probe to investigate material structure and its function. The Japan Atomic Energy Research Institute has launched the Neutron Science Project for construction and utilization of a high-intensity spallation neutron source coupled with a proton accelerator. In the project, a neutron scattering facility is planned to be constructed in an early stage. Development of a 5MW spallation neutron source is one of the most difficult technical challenges in this project. A two-step development plan of the target was established to construct a 5MW-target station In the 1st step, a 1.5MW target will be constructed to develop 5MW target technology. The preliminary conceptual design was conducted to clarify the specifications of the target system of 1.5MW and 5MW including system layout, scale etc. This report describes (1) a design policy, (2) a layout of system consisting of the target, remote-handling devices, bio-shieldings etc., (3) specifications of components and facilities such as cooling systems for target and moderators, beam-port shutter and air conditioning system, (4) overhaul procedures by remote-handling devices, (5) safety assessment, and (6) necessary R and D items derived from the design activity. (author)

  6. Diffusion and sorption in particles and two-dimensional dispersion in a porous media

    International Nuclear Information System (INIS)

    Rasmuson, A.

    1980-01-01

    A solution of the two-dimensional differential equation of dispersion from a disk source, coupled with a differential equation of diffusion and sorption in particles, is developed. The solution is obtained by the successive use of the Laplace and the Hankel transforms and is given in the form of an infinite double-integral. If the lateral dispersion is negligible, the solution is shown to simplify to a solution presented earlier. Dimensionless quantities are introduced. A steady-state condition is obtained after long time. This is investigated in some detail. An expression is derived for the highest concentration which may be expected at a point in space. An important relation is obtained when longitudinal dispersion is neglected. The solution for any value of the lateral dispersion coefficient and radial distance from the source is then obtained by simple multiplication of a solution for no lateral dispersion with the steady-state value. A method for integrating the infinite double integral is given. Some typical examples are shown. (Auth.)

  7. Effects of wind on background particle concentrations at truck freight terminals.

    Science.gov (United States)

    Garcia, Ronald; Hart, Jaime E; Davis, Mary E; Reaser, Paul; Natkin, Jonathan; Laden, Francine; Garshick, Eric; Smith, Thomas J

    2007-01-01

    Truck freight terminals are predominantly located near highways and industrial facilities. This proximity to pollution sources, coupled with meteorological conditions and wind patterns, may affect occupational exposures to particles at these work locations. To understand this process, data from an environmental sampling study of particles at U.S. trucking terminals, along with weather and geographic maps, were analyzed to determine the extent to which the transportation of particles from local pollutant sources elevated observed occupational exposures at these locations. To help identify potential upwind sources, wind direction weighted averages and speed measurements were used to construct wind roses that were superimposed on overhead photos of the terminal and examined for upwind source activity. Statistical tests were performed on these "source" and "nonsource" directions to determine whether there were significant differences in observed particle levels between the two groups. Our results provide evidence that nearby upwind pollution sources significantly elevated background concentrations at only a few of the locations sampled, whereas the majority provided little to no evidence of a significant upwind source effect.

  8. HO2 measurements at atmospheric concentrations using a chemical ionization mass spectrometry

    Science.gov (United States)

    Albrecht, S.; Novelli, A.; Hofzumahaus, A.; Kang, S.; Baker, Y.; Mentel, T. F.; Fuchs, H.

    2017-12-01

    Correct and precise measurements of atmospheric radical species are necessary for a better understanding of the oxidative capacity of the atmosphere. Due to the reactivity of radicals, and their consequent low concentrations, direct measurements of these species are particularly challenging and have been proven in the past to be affected by interfering species. Here we present a chemical ionization source coupled to an APi-HR-TOF-MS (Aerodyne Research Inc.), which has a limit of detection for HO2 radicals well below its atmospheric concentrations ( 1 x 108 molecules cm-3). The instrument was calibrated with a well-established and characterized HO2 calibration source in use for the laser induced fluorescence instrument in the Forschungszentrum Jülich. Within the source, a well characterized amount of HO2 radicals is produced after photolysis of water by a mercury lamp. In addition, several experiments were performed in the atmosphere simulation chamber SAPHIR at the Forschungszentrum Jülich to test for potential interferences. Measurements of HO2 radicals were concurrently detected by a laser induced fluorescence instrument allowing for the comparison of measurements within the two different and independent techniques for various atmospheric conditions regarding concentrations of O3, NOx and VOCs. Results from the intercomparison together with the calibration procedure of the instrument and laboratory characterization will be presented.

  9. Minimizing matrix effect by femtosecond laser ablation and ionization in elemental determination.

    Science.gov (United States)

    Zhang, Bochao; He, Miaohong; Hang, Wei; Huang, Benli

    2013-05-07

    Matrix effect is unavoidable in direct solid analysis, which usually is a leading cause of the nonstoichiometric effect in quantitative analysis. In this research, experiments were carried out to study the overall characteristics of atomization and ionization in laser-solid interaction. Both nanosecond (ns) and femtosecond (fs) lasers were applied in a buffer-gas-assisted ionization source coupled with an orthogonal time-of-flight mass spectrometer. Twenty-nine solid standards of ten different matrices, including six metals and four dielectrics, were analyzed. The results indicate that the fs-laser mode offers more stable relative sensitivity coefficients (RSCs) with irradiance higher than 7 × 10(13) W·cm(-2), which could be more reliable in the determination of element composition of solids. The matrix effect is reduced by half when the fs-laser is employed, owing to the fact that the fs-laser ablation and ionization (fs-LAI) incurs an almost heat-free ablation process and creates a dense plasma for the stable ionization.

  10. Measurements of noise from rotary coal unloading operations

    International Nuclear Information System (INIS)

    Adams, T.S.; Bilello, M.A.

    1991-01-01

    In the licensing effort for a coal-fired power plant in the northeast United States, noise related to delivery and unloading of coal by train was identified as a significant concern to the nearby community. Specific issues included locomotive noise, the banging noises caused by railcar couplings during the start and stop cycles of the unloading operation, wheel squeal in the curves of the rail loop, and rotary coal unloader noises. This paper reports that a literature review provided adequate information on idling locomotive noise but very little on the other noise sources. Coupling impact noise was well documented for railcars actually being coupled at various speeds but not for coupled trains during start and stop operations. Wheel squeal was well documented by subway trains travelling at normal speeds, but nothing could be found for wheel squeal during very slow train movement as occurs during unloading. Similarly, adequate information was available for unenclosed rotary unloaders but not for enclosed unloaders. Consequently, actual noise measurements of a similar enclosed facility, and the associated train movements, were undertaken to obtain data more directly applicable to the planned facility

  11. Biological contaminants and house characteristics : an interim analysis of data from the PEI study

    Energy Technology Data Exchange (ETDEWEB)

    Onysko, D.M. [DMO Associates (Canada); Ruest, K. [Canada Mortgage and Housing Corp., Ottawa, ON (Canada); Lawton, M. [Morrison Hershfield Ltd., Ottawa, ON (Canada); Miller, D. [Carleton Univ., Ottawa, ON (Canada); Fraser, B. [Jacques Whitford and Associates Limited, Ottawa, ON (Canada); Dale, R. [Health Canada, Ottawa, ON (Canada); Kazimierz, K.F.

    2005-07-01

    This paper discussed the results of a joint study on housing conditions, biological exposure and the health of infants in Prince Edward Island (PEI). The study was a longitudinal cohort investigation of the exposure of infants to biological materials in their home environments. Possible associations between housing data, biological data, operational circumstances and relevant family life style information were presented. A methodology of the study was presented, in which a total of 366 dwellings with newborn infants were monitored over a period of 6 years. All tests and inspections were presented, as well as the nature of variables in the study. House investigations included the following: housing and operational characteristics; variables related to the measure of molds in the air; mold areas as determined by visual inspection; the presence/absence of visible molds; past wetting events; and concentrations of endotoxins, ergosterol and allergens in various air and settled dust samples. It was concluded that there was support for the presumption that some housing characteristics were related to factors that may influence the health of occupants and their children. Moisture related concerns dominated the experimental design. Details of the following housing characteristics were summarized: ground moisture source coupling; operation of the residence by the occupant; analysis of dust samples; visible molds; and wetting events. It was concluded that further work is needed to review the final database in order to further correlate studies with the health of newborns who lived in the houses studied. 3 refs., 8 tabs., 4 figs.

  12. Consolidation of existing solid waste management plans in the Greater Toronto Area

    Energy Technology Data Exchange (ETDEWEB)

    1989-08-01

    The municipalities of the Greater Toronto Area (GTA) will be implementing initiatives in solid waste management, in view of the fact that current landfill capacity is nearly exhausted. A consolidation of information is provided on the solid waste management plans, programs, and facilities within the GTA. In response to environmental concerns coupled with difficulties encountered in developing new solid waste disposal facilities, waste reduction, reuse, and recycling efforts are developing rapidly. Some of the measures currently implemented and under investigation include: curbside recycling programs for newspapers, glass, metal, and plastic containers; expanding recycling efforts to apartment buildings; expanding the kinds of materials collected through the curbside programs; improving recycling services in rural areas; public education and promotional programs; promotion of home composting; household hazardous waste programs; recovery of cardboard from commercial and industrial sources, coupled with bans on cardboard at landfills; recovery of selected waste building materials such as wood and drywall, coupled with bans on these materials at landfills; recovery of paper from office buildings; and programs to assist industries in waste reduction, reuse, and recycling. The solid wastes generated in the GTA are managed in a number of facilities including recycling centers, transfer stations, and landfill sites. A 410 tonne/day energy-from-waste facility has recently been approved for Peel Region and is planned to be constructed in the coming year. 21 refs., 1 fig., 14 tabs.

  13. Compact light-emitting diode optical fiber immobilized TiO2 reactor for photocatalytic water treatment.

    Science.gov (United States)

    O'Neal Tugaoen, Heather; Garcia-Segura, Sergi; Hristovski, Kiril; Westerhoff, Paul

    2018-02-01

    A key barrier to implementing photocatalysis is delivering light to photocatalysts that are in contact with aqueous pollutants. Slurry photocatalyst systems suffer from poor light penetration and require post-treatment to separate the catalyst. The alternative is to deposit photocatalysts on fixed films and deliver light onto the surface or the backside of the attached catalysts. In this study, TiO 2 -coated quartz optical fibers were coupled to light emitting diodes (OF/LED) to improve in situ light delivery. Design factors and mechanisms studied for OF/LEDs in a flow-through reactor included: (i) the influence of number of LED sources coupled to fibers and (ii) the use of multiple optical fibers bundled to a single LED. The light delivery mechanism from the optical fibers into the TiO 2 coatings is thoroughly discussed. To demonstrate influence of design variables, experiments were conducted in the reactor using the chlorinated pollutant para-chlorobenzoic acid (pCBA). From the degradation kinetics of pCBA, the quantum efficiencies (Φ) of oxidation and electrical energies per order (E EO ) were determined. The use of TiO 2 coated optical fiber bundles reduced the energy requirements to deliver photons and increased available surface area, which improved Φ and enhanced oxidative pollutant removal performance (E EO ). Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Coulomb blockade and transfer of electrons one by one

    International Nuclear Information System (INIS)

    Pothier, Hugues

    1991-01-01

    Zero point fluctuations of the charge on the capacitance of a tunnel junction connected to a bias circuit are in almost all experimental situations larger than the electron charge. As a consequence, the effects of charge granularity are hidden, but in circuits with 'islands', which are electrodes connected to the rest of the circuit only through tunnel junctions and capacitors. The island charge being quantized, its fluctuations are blocked. If the island capacitance is sufficiently small, no electron can enter the island because of the increase of electrostatic energy that would occur. We have observed this effect, called 'Coulomb blockade', in the 'single electron box', where an island is formed between a tunnel junction and a capacitor. A bias voltage source coupled to the island through the capacitor allows to control the number of electrons. We have designed and operated two devices with nano-scale tunnel junctions based on this principle, the 'turnstile' and the 'pump', through which the current is controlled electron by electron. In our experiments, the precision of the transfer is of the order of one percent. It should be a million time better in versions of these devices with more junctions. One could then use them for a new measurement of the fine structure constant alpha. (author) [fr

  15. Usefulness of a Small-Field Digital Mammographic Imaging System Using Parabolic Polycapillary Optics as a Diagnostic Imaging Tool: a Preliminary Study

    International Nuclear Information System (INIS)

    Chon, Kwon Su; Park, Jeong Gon; Son, Hyun Hwa; Kang, Sung Hoon; Park, Seong Hoon; Kim, Hye Won; Kim, Hun Soo; Yoon, Kwon Ha

    2009-01-01

    To evaluate the efficacy for spatial resolution and radiation dose of a small-field digital mammographic imaging system using parabolic polycapillary optics. We developed a small-field digital mammographic imaging system composed of a CCD (charge coupled device) detector and an Xray source coupled with parabolic polycapillary optics. The spatial resolution and radiation dose according to various filters were evaluated for a small-field digital mammographic imaging system. The images of a test standard phantom and breast cancer tissue sample were obtained. The small-field digital mammographic imaging system had spatial resolutions of 12 lp/mm with molybdenum and rhodium filters with a 25-μm thickness. With a thicker molybdenum filter (100 μm thick), the system had a higher spatial resolution of 11 lp/mm and contrast of 0.48. The radiation dose for a rhodium filter with a 25-μm thickness was 0.13 mGy within a 10-mm-diameter local field. A larger field image greater than 10 mm in diameter could be obtained by scanning an object. On the small-field mammographic imaging system, microcalcifications of breast cancer tissue were clearly observed. A small-field digital mammographic imaging system with parabolic polycapillary optics may be a useful diagnostic tool for providing high-resolution imaging with a low radiation dose for examination of local volumes of breast tissue

  16. Usefulness of a Small-Field Digital Mammographic Imaging System Using Parabolic Polycapillary Optics as a Diagnostic Imaging Tool: a Preliminary Study

    Energy Technology Data Exchange (ETDEWEB)

    Chon, Kwon Su [Catholic University of Daegu, Daegu (Korea, Republic of); Park, Jeong Gon; Son, Hyun Hwa; Kang, Sung Hoon; Park, Seong Hoon; Kim, Hye Won; Kim, Hun Soo; Yoon, Kwon Ha [Wonkwang University, Iksan (Korea, Republic of)

    2009-12-15

    To evaluate the efficacy for spatial resolution and radiation dose of a small-field digital mammographic imaging system using parabolic polycapillary optics. We developed a small-field digital mammographic imaging system composed of a CCD (charge coupled device) detector and an Xray source coupled with parabolic polycapillary optics. The spatial resolution and radiation dose according to various filters were evaluated for a small-field digital mammographic imaging system. The images of a test standard phantom and breast cancer tissue sample were obtained. The small-field digital mammographic imaging system had spatial resolutions of 12 lp/mm with molybdenum and rhodium filters with a 25-{mu}m thickness. With a thicker molybdenum filter (100 {mu}m thick), the system had a higher spatial resolution of 11 lp/mm and contrast of 0.48. The radiation dose for a rhodium filter with a 25-{mu}m thickness was 0.13 mGy within a 10-mm-diameter local field. A larger field image greater than 10 mm in diameter could be obtained by scanning an object. On the small-field mammographic imaging system, microcalcifications of breast cancer tissue were clearly observed. A small-field digital mammographic imaging system with parabolic polycapillary optics may be a useful diagnostic tool for providing high-resolution imaging with a low radiation dose for examination of local volumes of breast tissue.

  17. Usage and conditions of radiation protection of nuclear meters in Brazil; Utilização e condições de proteção radiológica de medidores nucleares no Brasil

    Energy Technology Data Exchange (ETDEWEB)

    Guimarães, E.F. [Faculdade Casa Branca, SP (Brazil). Pós-Graduação de Proteção Radiológica em Aplicações Médicas, Industriais e Nucleares; Lima, C.M.A. [MAXIM Cursos, Rio de Janeiro-RJ (Brazil); Silva, F.C.A. da, E-mail: franciscodasilva13uk@gmail.com [Instituto de Radioproteção e Dosimetria (IRD/CNEN-RJ), Riode Janeiro, RJ (Brazil)

    2017-07-01

    The industries of mining, pulp, oil, etc. which require a quality control in the processes, use the nuclear meters with sealed radioactive sources coupled to a radiation detector that generate accurate and fast answers regarding the level, thickness, density and humidity of different types of materials. Nuclear meters are classified as fixed or portable and use transmission, backscatter or reactive systems. As they use radioactive sources with various ranges of activities, they are classified by the International Atomic Energy Agency - AIEA as Category 3 and 4, of medium and low radiological risk, and must therefore have a suitable level of radiation protection for safe use in the installation. The Brazilian National Energy Commission - CNEN controls approximately 500 authorized facilities with nuclear meters. The paper technically describes the nuclear meters and the radiological protection procedures that must be followed for the safety of the IOEs (occupationally exposed individuals) and individuals from the public, based on the specific nuclear meter test program for CNEN radiation protection supervisor. The professionals who handle these nuclear meters should be aware of the radiological risk to their own protection and to individuals in the public. For safe operation with nuclear meters, a number of requirements must be observed according to the type and need of the installation.

  18. Integrated interpretation of seismic and resistivity images across the «Val d'Agri» graben (Italy

    Directory of Open Access Journals (Sweden)

    E. Ceragioli

    2002-06-01

    Full Text Available Val d'Agri is a «recent SSW - NNE graben» located in the middle of the Southern Apennines thrust belt «chain» and emplaced in Plio-Pleistocene.The recent sedimentation of the valley represents a local critical geophysical problem. Several strong near surface velocity anomalies and scattering degrades seismic data in different ways and compromises the seismic visibility. In 1998, ENI and Enterprise, with the contribution of the European Community (ESIT R & D project - Enhance Seismic In Thrust Belt; EU Thermie fund acquired two «experimental seismic and Resistivity lines» across the valley. The purpose of the project was to look for methods able to enhance seismic data quality and optimize the data processing flow for «thrust belt» areas. During the work, it was clear that some part of the seismic data processing flow could be used for the detailed geological interpretation of the near subsurface too. In fact, the integrated interpretation of the near surface tomography velocity/depth seismic section, built for enhancing the resolution of static corrections, with the HR resistivity profile, acquired for enhancing the seismic source coupling, allowed a quite detailed lithological interpretation of the main shallow velocity changes and the 2D reconstruction of the structural setting of the valley.

  19. Bus Implementation Using New Low Power PFSCL Tristate Buffers

    Directory of Open Access Journals (Sweden)

    Neeta Pandey

    2016-01-01

    Full Text Available This paper proposes new positive feedback source coupled logic (PFSCL tristate buffers suited to bus applications. The proposed buffers use switch to attain high impedance state and modify the load or the current source section. An interesting consequence of this is overall reduction in the power consumption. The proposed tristate buffers consume half the power compared to the available switch based counterpart. The issues with available PFSCL tristate buffers based bus implementation are identified and benefits of employing the proposed tristate buffer topologies are put forward. SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. The performance of proposed tristate buffer topologies is examined on the basis of propagation delay, output enable time, and power consumption. It is found that one of the proposed tristate buffer topology outperforms the others in terms of all the performance parameters. An examination of behavior of available and the proposed PFSCL tristate buffer topologies under parameter variations and mismatch shows a maximum variation of 14%.

  20. A general field-covariant formulation of quantum field theory

    International Nuclear Information System (INIS)

    Anselmi, Damiano

    2013-01-01

    In all nontrivial cases renormalization, as it is usually formulated, is not a change of integration variables in the functional integral, plus parameter redefinitions, but a set of replacements, of actions and/or field variables and parameters. Because of this, we cannot write simple identities relating bare and renormalized generating functionals, or generating functionals before and after nonlinear changes of field variables. In this paper we investigate this issue and work out a general field-covariant approach to quantum field theory, which allows us to treat all perturbative changes of field variables, including the relation between bare and renormalized fields, as true changes of variables in the functional integral, under which the functionals Z and W=lnZ behave as scalars. We investigate the relation between composite fields and changes of field variables, and we show that, if J are the sources coupled to the elementary fields, all changes of field variables can be expressed as J-dependent redefinitions of the sources L coupled to the composite fields. We also work out the relation between the renormalization of variable-changes and the renormalization of composite fields. Using our transformation rules it is possible to derive the renormalization of a theory in a new variable frame from the renormalization in the old variable frame, without having to calculate it anew. We define several approaches, useful for different purposes, in particular a linear approach where all variable changes are described as linear source redefinitions. We include a number of explicit examples. (orig.)

  1. A Tiered Approach to Evaluating Salinity Sources in Water at Oil and Gas Production Sites.

    Science.gov (United States)

    Paquette, Shawn M; Molofsky, Lisa J; Connor, John A; Walker, Kenneth L; Hopkins, Harley; Chakraborty, Ayan

    2017-09-01

    A suspected increase in the salinity of fresh water resources can trigger a site investigation to identify the source(s) of salinity and the extent of any impacts. These investigations can be complicated by the presence of naturally elevated total dissolved solids or chlorides concentrations, multiple potential sources of salinity, and incomplete data and information on both naturally occurring conditions and the characteristics of potential sources. As a result, data evaluation techniques that are effective at one site may not be effective at another. In order to match the complexity of the evaluation effort to the complexity of the specific site, this paper presents a strategic tiered approach that utilizes established techniques for evaluating and identifying the source(s) of salinity in an efficient step-by-step manner. The tiered approach includes: (1) a simple screening process to evaluate whether an impact has occurred and if the source is readily apparent; (2) basic geochemical characterization of the impacted water resource(s) and potential salinity sources coupled with simple visual and statistical data evaluation methods to determine the source(s); and (3) advanced laboratory analyses (e.g., isotopes) and data evaluation methods to identify the source(s) and the extent of salinity impacts where it was not otherwise conclusive. A case study from the U.S. Gulf Coast is presented to illustrate the application of this tiered approach. © 2017, National Ground Water Association.

  2. Unresolved transition array based water window soft x-ray source by laser-produced high-Z plasma

    International Nuclear Information System (INIS)

    Higashiguchi, Takeshi; Dunne, Padraig; O'Sullivan, Gerry

    2013-01-01

    We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs) in the 2 to 4 nm region, extending below the carbon K edge (4.37 nm). Arrays resulting from n=4-n=4 transitions are overlaid with n=4-n=5 emission and shift to shorter wavelength with increasing atomic number. An outline of a microscope design for single-shot live cell imaging is proposed based on a bismuth plasma UTA source, coupled to multilayer mirror optics. At power densities available from 'table-top' solid-state lasers, comparison of emission from a number of targets has shown that 3d-4f UTA in zirconium plasmas have highest overall brightness and in an imaging system based on reflective multilayer mirrors, may, depending on bandwidth, have superior performance than either line or broader-band sources. (author)

  3. High-precision lead isotope ratio measurement by inductively coupled plasma multiple collector mass spectrometry

    International Nuclear Information System (INIS)

    Walder, A.J.; Furuta, Naoki.

    1993-01-01

    An inductively coupled plasma (ICP) ion source coupled to a magnetic sector mass analyser equipped with seven Faraday detectors has been used to measure the lead isotope ratios in solutions of Sanshiro Pond sediment collected at the University of Tokyo, airborne particulates collected at Shinjuku in Tokyo and Merck multielement standard product number 97279494. A thallium correction technique was utilized to allow a simultaneous correction for mass bias. This work followed an earlier interlaboratory comparison study of the above-mentioned solutions using ICP quadrupole mass spectrometry, and has demonstrated a considerable improvement in analytical precision. The following isotope ratio measurements were recorded. Pond sediment solution containing 82 ng ml -1 lead: 206 Pb/ 204 Pb=17.762±0.014; 206 Pb/ 207 Pb=1.1424±0.0009; 208 Pb/ 204 Pb=37.678±0.034. Airborne particulate solution containing 45 ng ml -1 lead: 206 Pb/ 204 Pb=17.969±0.006; 206 Pb/ 207 Pb=1.1528±0.0003; 208 Pb/ 204 Pb=37.915±0.021. Merck multielement standard solution containing 100 ng ml -1 lead: 206 Pb/ 204 Pb=19.255±0.015; 206 Pb/ 207 Pb=1.2238±0.0004; 208 Pb/ 204 Pb=38.476±0.021 (All errors are given as ±2 standard deviations). (author)

  4. Design and optimization of a compact laser-driven proton beamline.

    Science.gov (United States)

    Scisciò, M; Migliorati, M; Palumbo, L; Antici, P

    2018-04-19

    Laser-accelerated protons, generated by irradiating a solid target with a short, energetic laser pulse at high intensity (I > 10 18  W·cm -2 ), represent a complementary if not outperforming source compared to conventional accelerators, due  to their intrinsic features, such as high beam charge and short bunch duration. However, the broadband energy spectrum of these proton sources is a bottleneck that precludes their use in applications requiring a more reduced energy spread. Consequently, in recent times strong effort has been put to overcome these limits and to develop laser-driven proton beamlines with low energy spread. In this paper, we report on beam dynamics simulations aiming at optimizing a laser-driven beamline - i.e. a laser-based proton source coupled to conventional magnetic beam manipulation devices - producing protons with a reduced energy spread, usable for applications. The energy range of investigation goes from 2 to 20 MeV, i.e. the typical proton energies that can be routinely obtained using commercial TW-power class laser systems. Our beamline design is capable of reducing the energy spread below 20%, still keeping the overall transmission efficiency around 1% and producing a proton spot-size in the range of 10 mm 2 . We briefly discuss the results in the context of applications in the domain of Cultural Heritage.

  5. K*(892)0Λ and K+Σ*(1385)- Photoproduction on the Deuteron

    Energy Technology Data Exchange (ETDEWEB)

    Mattione, Paul [Rice Univ., Houston, TX (United States)

    2011-05-01

    Thirteen N* states have been well-established according to the Particle Data Group, but some relativized quark models predict that many more N* resonances exist. Diquark models predict that the N* spectrum is limited by a correlated quark-pair in the nucleon, but there is strong evidence for the existence of the N 3/2+(1900)** resonance, which is absent in diquark models. Measuring the spectrum of N* states will provide valuable information on the relevant degrees of freedom within the nucleons. Most of the experimental searches for the N* states have been conducted in the π N channel. Some models of baryon decays predict that most of the unobserved N* states couple somewhat weakly to the π N channel, and that some couple non-negligibly to the KY, K*Y, and KY* channels. Measurements of the cross sections and polarization observables of strangeness photoproduction reactions can provide additional information on the spectrum of N* states. These measurements can be used in coupled-channel partial-wave analyses that can provide simultaneous constraints on the N* resonance parameters from several channels. These analyses can also take into account hadronic rescattering, which is predicted to have a large effect on the measured cross sections. However, to determine the isospin decomposition of the photo-transition amplitudes to these channels, photoproduction measurements are necessary on both the proton and the neutron. Measurements of the differential cross sections of the γn\\rightarrow K*(892)0Λ and γn→ K+Σ*(1385)- reactions have been performed using data from the Jefferson Lab Hall B CLAS g13 experiment. No experimental cross section data have yet been published on the γ n\\rightarrow K*(892)0Λ reaction, and the only published cross section data on

  6. Investigation of the dipole response of nickel isotopes in the presence of a high-frequency electromagnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Rossi, Dominic M.

    2010-01-25

    The electric dipole response of neutron-rich nickel isotopes has been investigated using the LAND setup at GSI in Darmstadt (Germany). Relativistic secondary beams of {sup 56-57}Ni and {sup 67-72}Ni at approximately 500 AMeV have been generated using projectile fragmentation of stable ions on a 4 g/cm{sup 2} Be target and subsequent separation in the magnetic dipole fields of the FRagment Separator (FRS). After reaching the LAND setup in Cave C, the radioactive ions were excited electromagnetically in the electric field of a Pb target. The decay products have been measured in inverse kinematics using various detectors. Neutron-rich {sup 67-69}Ni isotopes decay by the emission of neutrons, which are detected in the LAND detector. The present analysis concentrates on the ({gamma},n) and ({gamma},2n) channels in these nuclei, since the proton and three-neutron thresholds are unlikely to be reached considering the virtual photon spectrum for nickel ions at 500 AMeV. A measurement of the stable {sup 58}Ni isotope is used as a benchmark to check the accuracy of the present results with previously published data. The measured ({gamma},n) and ({gamma},np) channels are compared with an inclusive photoneutron measurement by Fultz and coworkers, which are consistent within the respective errors. The measured excitation energy distributions of {sup 67-69}Ni contain a large portion of the Giant Dipole Resonance (GDR) strength predicted by the Thomas-Reiche-Kuhn energy-weighted sum rule, as well as a significant amount of low-lying E1 strength, that cannot be attributed to the GDR alone. The GDR distribution parameters are calculated using well-established semi-empirical systematic models, providing the peak energies and widths. The GDR strength is extracted from the {chi}{sup 2} minimization of the model GDR to the measured data of the ({gamma},2n) channel, thereby excluding any influence of eventual low-lying strength. The subtraction of the obtained GDR distribution from the

  7. Radiation effects in a CMOS/SOS/Al-Gate D/A converter and on-chip diagnostic transistors

    International Nuclear Information System (INIS)

    Brucker, G.J.; Heagerty, W.

    1976-01-01

    This paper presents the results obtained from total dose and transient radiation tests on a CMOS/SOS/Al-Gate D/A converter and on-chip diagnostic transistors. Samples were irradiated by cobalt-60 gamma rays under worst-case conditions, and by 10-MeV electron pulses of 50-ns and 4.4-μs duration. Devices were fabricated with three different insulators; the two discussed here are standard wet oxide and a pyrogenic oxide. Test transistors on the D/A chips made it possible to diagnose the failure modes of the converter and to evaluate some special designs. These consisted of standard edge p- and n-channel transistors, edgeless units, edgeless tetrode transistors, and an edgeless type transmission gate with a diode clamp from substrate to gate. The total dose results indicate that the pyrogenic oxide increased the failure dose of the operational amplifier portion of the converter from 10 3 rads (Si) to 2 x 10 6 rads (Si); however, the sample and hold failed after exposure to a low level of 10 3 rads (Si). Test devices indicated this to be due to the radiation-induced leakage current of the transmission gate which discharges the sample and hold capacitor. The diode clamp decreased the threshold voltage shifts and the leakage currents. The edgeless devices improved the device performance because of a more abrupt turn-on. Narrow-pulse test data indicated that the edgeless units produced less photocurrent than the edge units by about a factor of three to four. Converter upset levels are less than or equal to 10 9 rads/s due to precision requirements which make a few millivolt transients untenable

  8. Studies on the synthesis of isotopes of superheavy element Lv (Z = 116)

    Energy Technology Data Exchange (ETDEWEB)

    Santhosh, K.P.; Safoora, V. [Kannur University, School of Pure and Applied Physics, Payyanur (India)

    2017-11-15

    The probable projectile-target combinations for the synthesis of superheavy nucleus {sup 296}Lv found in the cold valley of {sup 296}Lv have been identified by studying the interaction barrier of the colliding nuclei, probability of compound nucleus formation, P{sub CN}, and survival probability W{sub sur}. At energies near and above the Coulomb barrier, the capture, fusion and evaporation residue (ER) cross sections for the probable combinations for the hot and cold fusion reactions are systematically investigated. By considering intensities of the projectile beams, availabilities of the targets and half lives of the colliding nuclei, the combination {sup 48}Ca + {sup 248}Cm is found to be the most probable projectile-target pair for the synthesis of {sup 296}Lv. The calculated maximum value of 2n, 3n, 4n and 5n channel cross section for the reaction {sup 48}Ca + {sup 248}Cm are 0.599 pb, 5.957 pb, 4.805 pb, and 0.065 pb, respectively. Moreover, the production cross sections for the synthesis of isotopes {sup 291-295,298}Lv using {sup 48}Ca projectile on {sup 243-247,250}Cm targets are calculated. Among these reactions, the reactions {sup 48}Ca + {sup 247}Cm → {sup 295}Lv and {sup 48}Ca + {sup 250}Cm → {sup 298}Lv have maximum production cross section in 3n (10.697 pb) and 4n (12.006 pb) channel, respectively. Our studies on the SHE Lv using the combinations {sup 48}Ca + {sup 245}Cm → {sup 293}Lv and {sup 48}Ca + {sup 248}Cm → {sup 296}Lv are compared with available experimental data and with other theoretical studies. Our studies are in agreement with experimental data and we hope that these studies will be a guide for the future experiments to synthesize the isotopes of Lv. (orig.)

  9. Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Hien Thu; Jeong, Hyundam [Chonnam National Univ., Gwangju (Korea, Republic of)

    2014-02-15

    Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide (SiO{sub 2}) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: 350 .deg. C, 400 .deg. C, 500 .deg. C, and 600 .deg. C. All samples showed semiconducting behavior and exhibited n-channel TFT{sup -} Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

  10. Dielectric isolation for power integrated circuits; Isolation dielectrique enterree pour les circuits integres de puissance

    Energy Technology Data Exchange (ETDEWEB)

    Zerrouk, D.

    1997-07-18

    Considerable efforts have been recently directed towards integrating onto the same chip, sense or protection elements that is low voltage analog and/or digital control circuitry together with high voltage/high current devices. Most of these so called `smart power` devices use either self isolation, junction isolation or Silicon-On-Insulator (SOI) to integrate low voltage elements with vertical power devices. Dielectric isolation is superior to the other isolation techniques such as self isolation or junction isolation. Thesis work consists of the study of the feasibility of a dielectric technology based on the melting and the solidification in a Rapid Thermal Processing furnace (RTP), of thick polysilicon films deposited on oxide. The purpose of this technique is to obtain substrate with localized SOI structures for smart power applications. SOI technology offers significant potential advantages, such as non-occurrence of latch-up in CMOS structures, high packaging density, low parasitic capacitance and the possibility of 3D structures. In addition, SOI technology using thick silicon films (10-100 {mu}m) offers special advantages for high voltage integrated circuits. Several techniques have been developed to form SOI films. Zone melting recrystallization is one of the most promising for localized SOI. The SOI structures have first been analyzed in term of extended defects. N-channel MOSFET`s transistors have also been fabricated in the SOI substrates and electrically characterized (threshold voltages, off-state leakage current, mobilities,...). The SOI transistors exhibit good characteristics, although inferior to witness transistors. The recrystallized silicon films are therefore found to be suitable for the fabrication of SOI devices. (author) 106 refs.

  11. Electronic properties of semiconducting naphthalene bisimide derivatives—Ultraviolet photoelectron spectroscopy versus electrochemistry

    International Nuclear Information System (INIS)

    Rybakiewicz, Renata; Gawrys, Pawel; Tsikritzis, Dimitris; Emmanouil, Konstantinos; Kennou, Stella; Zagorska, Malgorzata; Pron, Adam

    2013-01-01

    Highlights: ► Electrochemical method for the determination of the ionization potential (IP) in organic semiconductors was validated. ► Excellent correlation was found between the IP values determined electrochemically and by UPS for naphthalene bisimides. ► Excellent correlation was found between the calculated (DFT) IP values and the experimentally determined ones. -- Abstract: Key parameters for organic semiconductors used as active layers in organic electronic devices are: solution processability, charge carriers mobility as well as the electron affinity (EA) and the ionization potential (IP) which determine their redox properties and by consequence their air stability. The purpose of the present work was to investigate the influence of different substituents at imide nitrogen atom (alkylaryl, thienylene and triarylamine) and at naphthalene core (triarylamine) on the IP and EA values in recently synthesized naphthalene bisimide derivatives, tested as promising semiconductors for flexible n-channel or ambipolar organic field effect transistors (OFETs). The ionization potentials were determined by Ultra-violet Photoelectron Spectroscopy (UPS) for thin semiconductor films evaporated in ultra-high vacuum. The values obtained by photoelectron spectroscopy were compared with the ones determined from electrochemical investigations of the semiconductors dissolved in an electrolyte solution. Using cyclic voltammetry the IPs was estimated from the onset of the first oxidation peak whereas EAs from the onset of the first reduction peak. In cases where it was not possible to record the oxidation wave in the electrolyte electrochemical window, the IPs values were calculated by subtracting the energy of the spectroscopically (UV–vis–NIR) determined band gap from the EA values and changing the sign. A good correlation between the spectroscopic (UPS) and electrochemical data was found

  12. CMOS image sensor with contour enhancement

    Science.gov (United States)

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  13. Highly efficient fully transparent inverted OLEDs

    Science.gov (United States)

    Meyer, J.; Winkler, T.; Hamwi, S.; Schmale, S.; Kröger, M.; Görrn, P.; Johannes, H.-H.; Riedl, T.; Lang, E.; Becker, D.; Dobbertin, T.; Kowalsky, W.

    2007-09-01

    One of the unique selling propositions of OLEDs is their potential to realize highly transparent devices over the visible spectrum. This is because organic semiconductors provide a large Stokes-Shift and low intrinsic absorption losses. Hence, new areas of applications for displays and ambient lighting become accessible, for instance, the integration of OLEDs into the windshield or the ceiling of automobiles. The main challenge in the realization of fully transparent devices is the deposition of the top electrode. ITO is commonly used as transparent bottom anode in a conventional OLED. To obtain uniform light emission over the entire viewing angle and a low series resistance, a TCO such as ITO is desirable as top contact as well. However, sputter deposition of ITO on top of organic layers causes damage induced by high energetic particles and UV radiation. We have found an efficient process to protect the organic layers against the ITO rf magnetron deposition process of ITO for an inverted OLED (IOLED). The inverted structure allows the integration of OLEDs in more powerful n-channel transistors used in active matrix backplanes. Employing the green electrophosphorescent material Ir(ppy) 3 lead to IOLED with a current efficiency of 50 cd/A and power efficiency of 24 lm/W at 100 cd/m2. The average transmittance exceeds 80 % in the visible region. The on-set voltage for light emission is lower than 3 V. In addition, by vertical stacking we achieved a very high current efficiency of more than 70 cd/A for transparent IOLED.

  14. The kaon-nucleon interaction in the meson-exchange picture

    International Nuclear Information System (INIS)

    Buettgen, R.

    1988-07-01

    In this thesis we dealt with the free kaon-nucleon interaction which was constructed analogously to the Bonn potential in the meson-exchange picture. Identical vertices in the NN and KN interaction are parametrized by equal coupling constants and cut-off masses. Under the assumption of a SU(3) invariant interactions relations between the coupling constants have been determined so that also the experimentally only roughly known coupling constants to the strange vertices are fixed. The remaining free cut-off masses in the kaon vertices are fitted to the empirical scattering data. On the base of one-particle exchange processes the contribution of higher-order diagrams (box potentials with intermediate NK * , ΔK * , and ΔK states) in scattering phases, cross sections, and polarizations was studied. In the partial waves P 13 and D 03 the two-meson exchange processes lead to an essential improvement in the description of the empirical scattering phases. In the comparison of the calculated KN observables with the experimentally determined values (especially for the polarization in the elastic K + n channel) also the positive influence of the box potentials is shown. In the last part of the thesis for the similarly structured πN system it was studied whether here also the inclusion of uncorrelated two-meson exchange processes can remove the characteristical difficulties in the description of the empirical πN data. It results that the existing discrepancies between theoretical and empirical scattering phases can in this case not be removed by these higher-order processes. (orig./HSI) [de

  15. Effect of the gate scaling on the analogue performance of s-Si CMOS devices

    International Nuclear Information System (INIS)

    Fobelets, K; Calvo-Gallego, J; Velázquez-Pérez, J E

    2011-01-01

    In this contribution, we present a detailed study of the analogue performance of deep submicron strained n-channel Si/SiGe (s-Si) MOSFETs. The study was carried out using a 2D device simulator based on the hydrodynamic model and the impedance field method to self-consistently obtain the current noise at the device's terminals. The analysis focused on the possible benefits of the gate scaling on the ac and noise performance of the transistor for low-power applications while keeping constant the oxide thickness equal to 2 nm to guarantee negligible level of the gate tunnel current. For a drain to source bias of 50 mV, it was found that a pure scaling of the transistor's gate length under 32 nm is detrimental for subthreshold operation in terms of the subthreshold slope (S) and transconductance (g m ) but would lead to reasonably low values of the minimum noise figure (NF min ). For the sake of comparison, SOI MOSFETs with the same layout and operating under the same conditions were simulated. The SOI MOSFETs showed better immunity against the gate scaling in terms of S than the s-Si MOSFETs, but lower values of g m and a higher value of NF min at the same level of the drain current. Finally, the devices have been studied in the saturation region for a drain to source bias of 1 V. In this region, it was found that the dependence of the current level SOI or s-Si MOSFET may outperform its counterparts

  16. Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures

    International Nuclear Information System (INIS)

    Ding Jieqin; Wang Xiaoliang; Xiao Hongling; Wang Cuimei; Yin Haibo; Chen Hong; Feng Chun; Jiang Lijuan

    2012-01-01

    Highlights: ► We present calculations of carrier confinement characteristics. ► An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made. ► 2DEG sheet carrier density in designed heterostructure is greatly increased. ► Interface roughness and alloy disorder scattering reduced. ► Carrier mobility will be improved in designed heterostructure. - Abstract: We present calculations of carrier confinement characteristics in (Al y Ga 1−y N/AlN)SLs/GaN/(In x Ga 1−x N/GaN)MQW/GaN heterojunction structure in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made firstly including thickness of GaN channel, InGaN, and indium composition of In x Ga 1−x N in order to increase carrier density and mobility, and the influence of pairs of AlGaN/AlN superlattices (SLs) and InGaN/GaN MQWs on structure was discussed. Theoretical calculations clearly indicate that the two-dimensional electron gas (2DEG) sheet carrier density in designed heterostructure is greatly increased due to the enhancing of carrier confinement compared to those in conventional AlGaN/GaN one at the similar Al composition. Furthermore, the calculated carrier distribution shows that carrier mobility will be improved by reducing interface roughness and alloy disorder scattering in designed heterostructure.

  17. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

    Science.gov (United States)

    Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

    2018-01-01

    The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

  18. Theoretical Investigation on Charge Transfer Properties of 1,3,5-Tripyrrolebenzene (TPB and its Derivatives with Electron-withdrawing Substituents

    Directory of Open Access Journals (Sweden)

    Yong Hu

    2016-06-01

    Full Text Available The electronic structures and charge transport properties of 1,3,5-tripyrrolebenzene (TPB and its substituted derivatives with –F and –CN groups have been investigated by DFT calculations in combination with the Marcus hopping model. The dimer geometry was optimized by density functional theory method with dispersion force correction being included (DFT-D. Consequently, the charge transfer integral was evaluated. The calculation results show that the introduction of electron-withdrawing substituents does not significantly change the bond lengths and molecular symmetry of TPB, but lower the coplanarity between the pyrrole and benzene rings, especially in the case of CN substitution. Meanwhile, the introduction of electron-withdrawing groups can decrease the energy of the frontier molecular orbital and enhance the air stability. Fluorination makes the λe increase obviously while cyanation dose not. Generally speaking, the λe values of the title compounds are larger than their λh. Except for compounds 6 and 9, all others keep the face to face packing or have a slight slip in dimers, but the center of mass distances increase after fluorination or cyanation due to the distortion of the monomer’s coplanarity. The predicted quasi-one-dimensional electron mobility of the dimers is up to 0.433 cm2 V-1 s-1 at 298.15 K. The electron injection barriers of 2 and 7 are lower than that of TPB. The TPB derivatives of 1, 2, and 7 are potential n-channel materials with the high electron mobility. This work is licensed under a Creative Commons Attribution 4.0 International License.

  19. High-k shallow traps observed by charge pumping with varying discharging times

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

    2013-11-07

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

  20. Computational study of collisions between O(3P) and NO(2Π) at temperatures relevant to the hypersonic flight regime.

    Science.gov (United States)

    Castro-Palacio, Juan Carlos; Nagy, Tibor; Bemish, Raymond J; Meuwly, Markus

    2014-10-28

    Reactions involving N and O atoms dominate the energetics of the reactive air flow around spacecraft when reentering the atmosphere in the hypersonic flight regime. For this reason, the thermal rate coefficients for reactive processes involving O((3)P) and NO((2)Π) are relevant over a wide range of temperatures. For this purpose, a potential energy surface (PES) for the ground state of the NO2 molecule is constructed based on high-level ab initio calculations. These ab initio energies are represented using the reproducible kernel Hilbert space method and Legendre polynomials. The global PES of NO2 in the ground state is constructed by smoothly connecting the surfaces of the grids of various channels around the equilibrium NO2 geometry by a distance-dependent weighting function. The rate coefficients were calculated using Monte Carlo integration. The results indicate that at high temperatures only the lowest A-symmetry PES is relevant. At the highest temperatures investigated (20,000 K), the rate coefficient for the "O1O2+N" channel becomes comparable (to within a factor of around three) to the rate coefficient of the oxygen exchange reaction. A state resolved analysis shows that the smaller the vibrational quantum number of NO in the reactants, the higher the relative translational energy required to open it and conversely with higher vibrational quantum number, less translational energy is required. This is in accordance with Polanyi's rules. However, the oxygen exchange channel (NO2+O1) is accessible at any collision energy. Finally, this work introduces an efficient computational protocol for the investigation of three-atom collisions in general.

  1. Advanced Quadrupole Ion Trap Instrumentation for Low Level Vehicle Emissions Measurements

    International Nuclear Information System (INIS)

    McLuckey, S.A.

    1997-01-01

    Quadrupole ion trap mass spectrometry has been evaluated for its potential use in vehicle emissions measurements in vehicle test facilities as an analyzer for the top 15 compounds contributing to smog generation. A variety of ionization methods were explored including ion trap in situ chemical ionization, atmospheric sampling glow discharge ionization, and nitric oxide chemical ionization in a glow discharge ionization source coupled with anion trap mass spectrometer. Emphasis was placed on the determination of hydrocarbons and oxygenated hydrocarbons at parts per million to parts per billion levels. Ion trap in situ water chemical ionization and atmospheric sampling glow discharge ionization were both shown to be amendable to the analysis of arenes, alcohols, aldehydes and, to some degree, alkenes. Atmospheric sampling glow discharge also generated molecular ions of methy-t-butyl ether (MTBE). Neither of these ionization methods, however, were found to generate diagnostic ions for the alkanes. Nitric oxide chemical ionization, on the other hand, was found to yield diagnostic ions for alkanes, alkenes, arenes, alcohols, aldehydes, and MTBE. The ability to measure a variety of hydrocarbons present at roughly 15 parts per billion at measurement rates of 3 Hz was demonstrated. All of the ions with potential to serve as parent ions in a tandem mass spectrometry experiment were found to yield parent-to-product conversion efficiencies greater than 75%. The flexibility afforded to the ion trap by use of tailored wave-forms applied to the end-caps allows parallel monitoring schemes to be devised that provide many of the advantages of tandem mass spectrometry without major loss in measurement rate. A large loss in measurement rate would ordinarily result from the use of conventional tandem mass spectrometry experiments carried out in series for a large number of targeted components. These results have demonstrated that the ion trap has an excellent combination of

  2. Research synergy and drug development: Bright stars in neighboring constellations.

    Science.gov (United States)

    Keserci, Samet; Livingston, Eric; Wan, Lingtian; Pico, Alexander R; Chacko, George

    2017-11-01

    Drug discovery and subsequent availability of a new breakthrough therapeutic or 'cure' is a compelling example of societal benefit from research advances. These advances are invariably collaborative, involving the contributions of many scientists to a discovery network in which theory and experiment are built upon. To document and understand such scientific advances, data mining of public and commercial data sources coupled with network analysis can be used as a digital methodology to assemble and analyze component events in the history of a therapeutic. This methodology is extensible beyond the history of therapeutics and its use more generally supports (i) efficiency in exploring the scientific history of a research advance (ii) documenting and understanding collaboration (iii) portfolio analysis, planning and optimization (iv) communication of the societal value of research. Building upon prior art, we have conducted a case study of five anti-cancer therapeutics to identify the collaborations that resulted in the successful development of these therapeutics both within and across their respective networks. We have linked the work of over 235,000 authors in roughly 106,000 scientific publications that capture the research crucial for the development of these five therapeutics. Applying retrospective citation discovery, we have identified a core set of publications cited in the networks of all five therapeutics and additional intersections in combinations of networks. We have enriched the content of these networks by annotating them with information on research awards from the US National Institutes of Health (NIH). Lastly, we have mapped these awards to their cognate peer review panels, identifying another layer of collaborative scientific activity that influenced the research represented in these networks.

  3. Photodynamic therapy of bladder cancer - a phase I study using hexaminolevulinate (HAL).

    Science.gov (United States)

    Bader, M J; Stepp, Herbert; Beyer, Wolfgang; Pongratz, Thomas; Sroka, Ronald; Kriegmair, Martin; Zaak, Dirk; Welschof, Mona; Tilki, Derya; Stief, Christian G; Waidelich, Raphaela

    2013-10-01

    To assess the safety and feasibility of hexaminolevulinate (HAL) based photodynamic therapy (PDT) as adjuvant treatment after transurethral resection of the bladder (TURB) in patients with intermediate or high-risk urothelial cell carcinoma (UCC) of the bladder. Seventeen patients received 50 ml of either a 16 mM (4 patients) or 8 mM HAL (13 patients) solution instilled intravesically. Bladder wall irradiation was performed using an incoherent white light source coupled via a quartz fiber assembled into a flexible transurethral irrigation catheter. Each patient received 3 treatments with HAL-PDT 6 weeks apart. After PDT, patients were followed by regular cystoscopy for up to 21 months to assess time to recurrence. Reported adverse events (AEs) were coded according the World Health Organization Adverse Reaction Terminology (WHO-ART). Efficacy was assessed by cystoscopy, cytology, and histology, and was defined as the number of patients who were tumor-free at 6 or 21 months after initial PDT treatment. Transient bladder irritability was reported by 15 of the 17 patients and resolved completely in all patients. No evidence of a cumulative effect of treatment on the incidence of AEs could be detected. PDT treatment was performed without any technical complications. Furthermore preliminary assessment of efficacy showed that of the 17 patients included, 9 (52.9%; 95% CI: 27.8-77.0) were tumor-free at 6 months, 4 (23.5%; 95% CI: 6.8-49.9) were tumor-free at 9 months, and 2 (11.8%, 95% CI: 1.5-36.4) were tumor-free after 21 months. PDT using hexaminolevulinate and an incoherent white light system with the special flexible irradiation catheter system is technically feasible and safe and may offer an alternative in the treatment of non-muscle-invasive intermediate and high-risk bladder cancer. Copyright © 2013 Elsevier Inc. All rights reserved.

  4. Three-dimensional polarization characteristics of magnetic variations in the Pc 5 frequency range at conjugate areas near L=4

    International Nuclear Information System (INIS)

    Fukunishi, H.; Lanzerotti, L.J.; MaClennan, C.G.

    1975-01-01

    By using magnetic data measured at a network of stations extending from L approx. 3.2 to L approx. 4.4 and at a station in the conjugate area, ellipticities in the three orthogonal planes (H-D, H-Z, and D-Z) for the frequency range 2-5 mHz were computed continuously by the cross-spectral matrix method over 10 days with various levels of magnetic activity. The ellipticity diagrams in the H-D plane show that, except for the time interval during the main phase of a major magnetic storm, the sense of polarization reverses every day across local noon, with a left-hand polarization observed during local morning hours and a right-hand polarization observed during local evening hours, regardless of the level of magnetic activity. The second reversal of the sense of polarization occurs generally around approx. 2000 LT. The ellipticity diagrams in the H-Z plane show a predominantly clockwise polarization throughout the day, while the diurnal variation of the ellipticity in the D-Z plane tends to be confused. As to the latitude dependence of the wave phase, it is found that the D component oscillations are almost in phase at all latitudes, while the H component oscillations have advanced phase shifts at the lower-latitude stations. As to the conjugate dependence of wave phase, it is found that the D component oscillations are almost out of phase, while the H component oscillations are almost in phase atthe conjugate pair stations. These polarization characteristics are discussed in terms of external driving sources coupling to the shear Alfven waves of the local resonant field lines. Possible energy sources of Pc 5 waves are also discussed on the basis of the local time dependence of the sense of polarization

  5. Techno-economic study of hydrogen production by high temperature electrolysis and coupling with different thermal energy sources

    International Nuclear Information System (INIS)

    Rivera-Tinoco, R.

    2009-03-01

    This work focuses on the techno-economic study of massive hydrogen production by the High Temperature Electrolysis (HTE) process and also deals with the possibility of producing the steam needed in the process by using different thermal energy sources. Among several sources, those retained in this study are the biomass and domestic waste incineration units, as well as two nuclear reactors (European Pressurised water Reactor - EPR and Sodium Fast Reactor - SFR). Firstly, the technical evaluation of the steam production by each of these sources was carried out. Then, the design and modelling of the equipments composing the process, specially the electrolysers (Solid Oxides Electrolysis Cells), are presented. Finally, the hydrogen production cost for each energy sources coupled with the HTE process is calculated. Moreover, several sensibility studies were performed in order to determine the process key parameter and to evaluate the influence of the unit size effect, the electric energy cost, maintenance, the cells current density, their investment cost and their lifespan on the hydrogen production cost. Our results show that the thermal energy cost is much more influent on the hydrogen production cost than the steam temperature at the outlet stream of the thermal source. It seems also that the key parameters for this process are the electric energy cost and the c ells lifespan. The first one contributes for more than 70% of the hydrogen production cost. From several cell lifespan values, it seems that a 3 year value, rather than 1 year, could lead to a hydrogen production cost reduced on 34%. However, longer lifespan values going from 5 to 10 years would only lead to a 8% reduction on the hydrogen production cost. (author)

  6. Progress Towards the Terahertz Rotational Spectrum of H_5^+ and its Isotopologues

    Science.gov (United States)

    McGuire, B. A.; Wang, Y.; Bowman, J.; Widicus Weaver, S. L.

    2011-05-01

    The H_5^+ collisional complex is readily formed from the reaction of H_3^+ with H_2, which is arguably the most common bimolecular reaction in the universe. This reaction, and consequently H_5^+, play critical roles in interstellar chemistry, influencing such varied processes as complex molecule formation and isotopic fractionation. A thorough understanding of the role of H_5^+ on these and other astrochemical processes is contingent upon its successful laboratory and interstellar detection. The experimental spectrum of H_5^+ in the terahertz region is currently not known and thus the theoretical/computational prediction of this spectrum is an important first step to guide experiment. The highly fluxional nature of H_5^+ presents major challenges for theory, especially for the pure rotational spectrum. This is because the dipole moment must be obtained from a correct description of the highly delocalized zero-point wavefunction. This has been done using the most recent potential energy and dipole moment surfaces for H_5^+ and its isotopologues DH_4^+, D_2H_3^+, D_3H_2^+, D_4H^+, and D_5^+. We will present calculated pure rotational spectra for these species using standard simulation codes but with zero-point averaged calculated dipole moments. We will discuss the implications of these results for the detection of the rotational spectrum for each ion, show preliminary predictions of the rotational spectrum for those species possessing permanent dipole moments, and comment on the degree of expected spectral splitting arising from internal motion. Finally, we will report on progress in the construction of a supersonic expansion discharge source coupled with a high-sensitivity cavity ringdown spectrometer to enable laboratory spectroscopic investigation of these species in the terahertz region.

  7. Evaluation of conventional imaging performance in a research whole-body CT system with a photon-counting detector array

    International Nuclear Information System (INIS)

    Yu, Zhicong; Leng, Shuai; Li, Zhoubo; Chen, Baiyu; Yu, Lifeng; McCollough, Cynthia H; Jorgensen, Steven M; Ritman, Erik L; Gutjahr, Ralf; Kappler, Steffen; Halaweish, Ahmed F

    2016-01-01

    This study evaluated the conventional imaging performance of a research whole-body photon-counting CT system and investigated its feasibility for imaging using clinically realistic levels of x-ray photon flux. This research system was built on the platform of a 2nd generation dual-source CT system: one source coupled to an energy integrating detector (EID) and the other coupled to a photon-counting detector (PCD). Phantom studies were conducted to measure CT number accuracy and uniformity for water, CT number energy dependency for high-Z materials, spatial resolution, noise, and contrast-to-noise ratio. The results from the EID and PCD subsystems were compared. The impact of high photon flux, such as pulse pile-up, was assessed by studying the noise-to-tube-current relationship using a neonate water phantom and high x-ray photon flux. Finally, clinical feasibility of the PCD subsystem was investigated using anthropomorphic phantoms, a cadaveric head, and a whole-body cadaver, which were scanned at dose levels equivalent to or higher than those used clinically. Phantom measurements demonstrated that the PCD subsystem provided comparable image quality to the EID subsystem, except that the PCD subsystem provided slightly better longitudinal spatial resolution and about 25% improvement in contrast-to-noise ratio for iodine. The impact of high photon flux was found to be negligible for the PCD subsystem: only subtle high-flux effects were noticed for tube currents higher than 300 mA in images of the neonate water phantom. Results of the anthropomorphic phantom and cadaver scans demonstrated comparable image quality between the EID and PCD subsystems. There were no noticeable ring, streaking, or cupping/capping artifacts in the PCD images. In addition, the PCD subsystem provided spectral information. Our experiments demonstrated that the research whole-body photon-counting CT system is capable of providing clinical image quality at clinically realistic levels of x

  8. Atmospheric processes affecting the separation of volcanic ash and SO2 in volcanic eruptions: inferences from the May 2011 Grímsvötn eruption

    Directory of Open Access Journals (Sweden)

    F. Prata

    2017-09-01

    Full Text Available The separation of volcanic ash and sulfur dioxide (SO2 gas is sometimes observed during volcanic eruptions. The exact conditions under which separation occurs are not fully understood but the phenomenon is of importance because of the effects volcanic emissions have on aviation, on the environment, and on the earth's radiation balance. The eruption of Grímsvötn, a subglacial volcano under the Vatnajökull glacier in Iceland during 21–28 May 2011 produced one of the most spectacular examples of ash and SO2 separation, which led to errors in the forecasting of ash in the atmosphere over northern Europe. Satellite data from several sources coupled with meteorological wind data and photographic evidence suggest that the eruption column was unable to sustain itself, resulting in a large deposition of ash, which left a low-level ash-rich atmospheric plume moving southwards and then eastwards towards the southern Scandinavian coast and a high-level predominantly SO2 plume travelling northwards and then spreading eastwards and westwards. Here we provide observational and modelling perspectives on the separation of ash and SO2 and present quantitative estimates of the masses of ash and SO2 that erupted, the directions of transport, and the likely impacts. We hypothesise that a partial column collapse or sloughing fed with ash from pyroclastic density currents (PDCs occurred during the early stage of the eruption, leading to an ash-laden gravity intrusion that was swept southwards, separated from the main column. Our model suggests that water-mediated aggregation caused enhanced ash removal because of the plentiful supply of source water from melted glacial ice and from entrained atmospheric water. The analysis also suggests that ash and SO2 should be treated with separate source terms, leading to improvements in forecasting the movement of both types of emissions.

  9. Evolution of L -shell photoabsorption of the molecular-ion series Si Hn + (n =1 ,2 ,3 ): Experimental and theoretical studies

    Science.gov (United States)

    Kennedy, E. T.; Mosnier, J.-P.; van Kampen, P.; Bizau, J.-M.; Cubaynes, D.; Guilbaud, S.; Carniato, S.; Puglisi, A.; Sisourat, N.

    2018-04-01

    We report on complementary laboratory and theoretical investigations of the 2 p photoexcitation cross sections for the molecular-ion series Si Hn + (n =1 ,2 ,3 ) near the L -shell threshold. The experiments used an electron cyclotron resonance (ECR) plasma molecular-ion source coupled with monochromatized synchrotron radiation in a merged-beam configuration. For all three molecular ions, the S i2 + decay channel appeared dominant, suggesting similar electronic and nuclear relaxation patterns involving resonant Auger and dissociation processes, respectively. The total yields of the S i2 + products were recorded and put on absolute cross-section scales by comparison with the spectrum of the S i+ parent atomic ion. Interpretation of the experimental spectra ensued from a comparison with total photoabsorption cross-sectional profiles calculated using ab initio configuration interaction theoretical methods inclusive of vibrational dynamics and contributions from inner-shell excitations in both ground and valence-excited electronic states. The spectra, while broadly similar for all three molecular ions, moved towards lower energies as the number of screening hydrogen atoms increased from one to three. They featured a wide and shallow region below ˜107 eV due to 2 p →σ* transitions to dissociative states, and intense and broadened peaks in the ˜107 -113 -eV region merging into sharp Rydberg series due to 2 p →n δ ,n π transitions converging on the LII ,III limits above ˜113 eV . This overall spectral shape is broadly replicated by theory in each case, but the level of agreement does not extend to individual resonance structures. In addition to the fundamental interest, the work should also prove useful for the understanding and modeling of astronomical and laboratory plasma sources where silicon hydride molecular species play significant roles.

  10. Evaluation of conventional imaging performance in a research whole-body CT system with a photon-counting detector array.

    Science.gov (United States)

    Yu, Zhicong; Leng, Shuai; Jorgensen, Steven M; Li, Zhoubo; Gutjahr, Ralf; Chen, Baiyu; Halaweish, Ahmed F; Kappler, Steffen; Yu, Lifeng; Ritman, Erik L; McCollough, Cynthia H

    2016-02-21

    This study evaluated the conventional imaging performance of a research whole-body photon-counting CT system and investigated its feasibility for imaging using clinically realistic levels of x-ray photon flux. This research system was built on the platform of a 2nd generation dual-source CT system: one source coupled to an energy integrating detector (EID) and the other coupled to a photon-counting detector (PCD). Phantom studies were conducted to measure CT number accuracy and uniformity for water, CT number energy dependency for high-Z materials, spatial resolution, noise, and contrast-to-noise ratio. The results from the EID and PCD subsystems were compared. The impact of high photon flux, such as pulse pile-up, was assessed by studying the noise-to-tube-current relationship using a neonate water phantom and high x-ray photon flux. Finally, clinical feasibility of the PCD subsystem was investigated using anthropomorphic phantoms, a cadaveric head, and a whole-body cadaver, which were scanned at dose levels equivalent to or higher than those used clinically. Phantom measurements demonstrated that the PCD subsystem provided comparable image quality to the EID subsystem, except that the PCD subsystem provided slightly better longitudinal spatial resolution and about 25% improvement in contrast-to-noise ratio for iodine. The impact of high photon flux was found to be negligible for the PCD subsystem: only subtle high-flux effects were noticed for tube currents higher than 300 mA in images of the neonate water phantom. Results of the anthropomorphic phantom and cadaver scans demonstrated comparable image quality between the EID and PCD subsystems. There were no noticeable ring, streaking, or cupping/capping artifacts in the PCD images. In addition, the PCD subsystem provided spectral information. Our experiments demonstrated that the research whole-body photon-counting CT system is capable of providing clinical image quality at clinically realistic levels of x

  11. Research synergy and drug development: Bright stars in neighboring constellations

    Directory of Open Access Journals (Sweden)

    Samet Keserci

    2017-11-01

    Full Text Available Drug discovery and subsequent availability of a new breakthrough therapeutic or ‘cure’ is a compelling example of societal benefit from research advances. These advances are invariably collaborative, involving the contributions of many scientists to a discovery network in which theory and experiment are built upon. To document and understand such scientific advances, data mining of public and commercial data sources coupled with network analysis can be used as a digital methodology to assemble and analyze component events in the history of a therapeutic. This methodology is extensible beyond the history of therapeutics and its use more generally supports (i efficiency in exploring the scientific history of a research advance (ii documenting and understanding collaboration (iii portfolio analysis, planning and optimization (iv communication of the societal value of research. Building upon prior art, we have conducted a case study of five anti-cancer therapeutics to identify the collaborations that resulted in the successful development of these therapeutics both within and across their respective networks. We have linked the work of over 235,000 authors in roughly 106,000 scientific publications that capture the research crucial for the development of these five therapeutics. Applying retrospective citation discovery, we have identified a core set of publications cited in the networks of all five therapeutics and additional intersections in combinations of networks. We have enriched the content of these networks by annotating them with information on research awards from the US National Institutes of Health (NIH. Lastly, we have mapped these awards to their cognate peer review panels, identifying another layer of collaborative scientific activity that influenced the research represented in these networks. Keywords: Information science, Cancer research

  12. Multi-fuel multi-product operation of IGCC power plants with carbon capture and storage (CCS)

    International Nuclear Information System (INIS)

    Cormos, Ana-Maria; Dinca, Cristian; Cormos, Calin-Cristian

    2015-01-01

    This paper investigates multi-fuel multi-product operation of IGCC plants with carbon capture and storage (CCS). The investigated plant designs co-process coal with different sorts of biomass (e.g. sawdust) and solid wastes, through gasification, leading to different decarbonised energy vectors (power, hydrogen, heat, substitute natural gas etc.) simultaneous with carbon capture. Co-gasification of coal with different renewable energy sources coupled with carbon capture will pave the way towards zero emissions power plants. The energy conversions investigated in the paper were simulated using commercial process flow modelling package (ChemCAD) in order to produce mass and energy balances necessary for the proposed evaluation. As illustrative cases, hydrogen and power co-generation and Fischer–Tropsch fuel synthesis (both with carbon capture), were presented. The case studies investigated in the paper produce a flexible ratio between power and hydrogen (in the range of 400–600 MW net electricity and 0–200 MW th hydrogen considering the lower heating value) with at least 90% carbon capture rate. Special emphasis were given to fuel selection criteria for optimisation of gasification performances (fuel blending), to the selection criteria for gasification reactor in a multi-fuel multi-product operation scenario, modelling and simulation of whole process, to thermal and power integration of processes, flexibility analysis of the energy conversion processes, in-depth techno-economic and environmental assessment etc. - Highlights: • Assessment of IGCC-based energy vectors poly-generation systems with CCS. • Optimisation of gasification performances and CO 2 emissions by fuel blending. • Multi-fuel multi-product operation of gasification plants

  13. The Establishment of Object Selection Criteria for Effect Analysis of Electromagnetic Pulse (EMP) in Operating Nuclear Power Plants

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Song Hae; Ryu, Hosun; Kim, Minyi; Lee, Euijong [KHNP CRI, Daejeon (Korea, Republic of)

    2016-10-15

    The electromagnetic pulse (EMP) can be used as a strategic weapon by inducing damaging voltage and currents that the electrical circuits are not designed to withstand. EMPs are lethal to electronic systems. All EMP events have three common components: a source, coupling path, and receptor. It can also travel across power grids, destroying electronics as it passes in less than a second. There have been no research studies on the effect analysis for EMP in domestic nuclear power plants and power grids. To ensure the safety of operating nuclear power plants in this environment, the emission of EMP is needed for the effect analysis and safety measures against EMPs. Actually, it is difficult and inefficient to conduct the effect analysis of EMP with all the equipment and systems in nuclear power plants (NPPs). Therefore, this paper presents the results of establishing the object selection criteria for the effect analysis of EMP in operating nuclear power plants through reviewing previous research in the US and the safety related design concepts in domestic NPPs. It is not necessary to ensure the continued operation of the plant in intense multiple EMP environments. The most probable effect of EMP on a modern nuclear power plant is an unscheduled shutdown. EMP may also cause an extended shutdown by the unnecessary activation of some safety related systems. In general, EMP can be considered a nuisance to nuclear plants, but it is not considered a serious threat to plant safety. The results of EMP effect analysis show less possibility of failure in the tested individual equipment. It was also confirmed that there is no possibility of simultaneous failure for devices in charge of the safety shutdown in the NPP.

  14. A compact soft X-ray microscope using an electrode-less Z-pinch source

    Science.gov (United States)

    Horne, S. F.; Silterra, J.; Holber, W.

    2009-09-01

    Soft X-rays (medical interest both for imaging and microdosimetry applications. X-ray sources at this low energy present a technological challenge. Synchrotrons, while very powerful and flexible, are enormously expensive national research facilities. Conventional X-ray sources based on electron bombardment can be compact and inexpensive, but low x-ray production efficiencies at low electron energies restrict this approach to very low power applications. Laser-based sources tend to be expensive and unreliable. Energetiq Technology, Inc. (Woburn, MA, USA) markets a 92 eV, 10W(2pi sr) electrode-less Z-pinch source developed for advanced semiconductor lithography. A modified version of this commercial product has produced 400 mW at 430 eV (2pi sr), appropriate for water window soft X-ray microscopy. The US NIH has funded Energetiq to design and construct a demonstration microscope using this source, coupled to a condenser optic, as the illumination system. The design of the condenser optic matches the unique characteristics of the source to the illumination requirements of the microscope, which is otherwise a conventional design. A separate program is underway to develop a microbeam system, in conjunction with the RARAF facility at Columbia University, NY, USA. The objective is to develop a focused, sub-micron beam capable of delivering > 1 Gy/second to the nucleus of a living cell. While most facilities of this type are coupled to a large and expensive particle accelerator, the Z-pinch X-ray source enables a compact, stand-alone design suitable to a small laboratory. The major technical issues in this system involve development of suitable focusing X-ray optics. Current status of these programs will be reported. (Supported by NIH grants 5R44RR022488-03 and 5R44RR023753-03)

  15. San Francisco Bay nutrients and plankton dynamics as simulated by a coupled hydrodynamic-ecosystem model

    Science.gov (United States)

    Liu, Qianqian; Chai, Fei; Dugdale, Richard; Chao, Yi; Xue, Huijie; Rao, Shivanesh; Wilkerson, Frances; Farrara, John; Zhang, Hongchun; Wang, Zhengui; Zhang, Yinglong

    2018-06-01

    An open source coupled physical-biogeochemical model is developed for San Francisco Bay (SFB) to study nutrient cycling and plankton dynamics as well as to assist ecosystem based management and risk assessment. The biogeochemical model in this study is based on the Carbon, Silicate and Nitrogen Ecosystem (CoSiNE) model, and coupled to the unstructured grid, Semi-Implicit Cross-scale Hydroscience Integrated System Model (SCHISM). The SCHISM-CoSiNE model reproduces the spatial and temporal variability in nutrients and plankton biomass, and its physical and biogeochemical performance is successfully tested using comparisons with shipboard and fixed station observations. The biogeochemical characteristics of the SFB during wet and dry years are investigated by changing the input of the major rivers. River discharges from the Sacramento and San Joaquin Rivers affect the phytoplankton biomass in North SFB through both advection and dilution of nutrient (including ammonium, NH4) concentrations in the river. The reduction in residence time caused by increased inflows can result in decreased biomass accumulation, while the corresponding reduction in NH4 concentration favors the growth of biomass. In addition, the model is used to make a series of sensitivity experiments to examine the response of SFB to changes in 1) nutrient loading from rivers and wastewater treatment plants (WWTPs), 2) a parameter (ψ) defining NH4 inhibition of nitrate (NO3) uptake by phytoplankton, 3) bottom grazing and 4) suspended sediment concentration. The model results show that changes in NH4 input from rivers or WWTPs affect the likelihood of phytoplankton blooms via NH4 inhibition and that the choice of ψ is critical. Bottom grazing simulated here as increased plankton mortality demonstrates the potential for bivalve reduction of chlorophyll biomass and the need to include bivalve grazing in future models. Furthermore, the model demonstrates the need to include sediments and their contribution

  16. The PEGASUS Drive: A nuclear electric propulsion system for the space exploration initiative

    International Nuclear Information System (INIS)

    Coomes, E.P.; Dagle, J.E.

    1991-01-01

    The advantages of using electric propulsion for propulsion are well-known in the aerospace community. The high specific impulse, lower propellant requirements, and lower system mass make it a very attractive propulsion option for the Space Exploration Initiative (SEI), especially for the transport of cargo. One such propulsion system is the PEGASUS Drive (Coomes et al. 1987). In its original configuration, the PEGASUS Drive consisted of a 10-MWe power source coupled to a 6-MW magnetoplasmadynamic (MPD) thruster system. The PEGASUS Drive propelled a manned vechicle to Mars and back in 601 days. By removing the crew and their associated support systems from the space craft and by incorporating technology advances in reactor design and heat rejection systems, a second generation PEGASUS Drive can be developed with an alpha less than two. Utilizing this propulsion system, a 400-MT cargo vechicle, assembled and loaded in low Earth orbit (LEO), could deliver 262 MT of supplies and hardware to MARS 282 days after escaping Earth orbit. Upon arrival at Mars the transport vehicle would place its cargo in the desired parking orbit around Mars and then proceed to synchronous orbit above the desired landing sight. Using a laser transmitter, PEGASUS could provide 2-MW on the surface to operate automated systems deployed earlier and then provide surface power to support crew activities after their arrival. The additional supplies and hardware, coupled with the availability of megawatt levels of electric power on the Mars surface, would greatly enhance and even expand the mission options being considered under SEI

  17. A neutron irradiator applied to cancer treatment

    International Nuclear Information System (INIS)

    Campos, Tarcisio P.R.; Andrade, Ana P. de

    2000-01-01

    Cancer and the way of treating it with neutron capture therapy are addressed. This paper discusses also the type of neutron facilities used to treat cancer around the world, as follow: discrete neutron sources, accelerators, and nuclear reactors. The major features of an epithermal neutron irradiation facility applied to BNCT treatment are addressed. The main goal is to give another choice of neutron irradiators to be set in a hospital. The irradiation facility embeds a set of 252 Cf neutron source coupled with a homogeneous mixture of uranium-zirconium hydride alloy containing 8.4 wt % uranium enriched to 20% U 235 . The facility delivers an epithermal neutron beam with low background of fast neutron and gamma rays. The N particle transport code (MCNP-4A) has been used during the simulation in order to achieve the desired configurations and to estimate the multiplication factor, k eff . The present facility loaded with 30 mg of 252 Cf neutron source generates an external beam with an intensity of 10 7 n/cm 2 .s on the spectrum of 4 eV to 40 KeV. The 252 Cf - facility coupled with fissile material was able to amplify the epithermal flux to 10 8 n/cm 2 .s, maintaining the figure-of-merits represented by the ratios of the fast dose and gamma dose in air per epithermal neutron flux closed to those values presented by BMRR, MITR-II and Petten Reactor. The medical irradiation facility loaded with 252 Cf- 235 U can be a choice for BNCT. (author)

  18. Velocity measurements in the near field of a diesel fuel injector by ultrafast imagery

    Science.gov (United States)

    Sedarsky, David; Idlahcen, Saïd; Rozé, Claude; Blaisot, Jean-Bernard

    2013-02-01

    This paper examines the velocity profile of fuel issuing from a high-pressure single-orifice diesel injector. Velocities of liquid structures were determined from time-resolved ultrafast shadow images, formed by an amplified two-pulse laser source coupled to a double-frame camera. A statistical analysis of the data over many injection events was undertaken to map velocities related to spray formation near the nozzle outlet as a function of time after start of injection. These results reveal a strong asymmetry in the liquid profile of the test injector, with distinct fast and slow regions on opposite sides of the orifice. Differences of ˜100 m/s can be observed between the `fast' and `slow' sides of the jet, resulting in different atomization conditions across the spray. On average, droplets are dispersed at a greater distance from the nozzle on the `fast' side of the flow, and distinct macrostructure can be observed under the asymmetric velocity conditions. The changes in structural velocity and atomization behavior resemble flow structures which are often observed in the presence of string cavitation produced under controlled conditions in scaled, transparent test nozzles. These observations suggest that widely used common-rail supply configurations and modern injectors can potentially generate asymmetric interior flows which strongly influence diesel spray morphology. The velocimetry measurements presented in this work represent an effective and relatively straightforward approach to identify deviant flow behavior in real diesel sprays, providing new spatially resolved information on fluid structure and flow characteristics within the shear layers on the jet periphery.

  19. Charge compensation and binding energy referencing in XPS analysis

    International Nuclear Information System (INIS)

    Metson, J.B.

    1999-01-01

    Full text: The past decade has seen a number of significant advances in the capabilities of commercial X-ray Photoelectron spectrometers. Of note have been the near universal adoption of monochromatised X-ray sources, very useful advances in spatial resolution, particularly in spectroscopy, and radical developments in sample handling and automation. However one of the most significant advances has been the development of several relatively new concepts in charge compensation. Throughout the evolution of XPS, the ability to compensate for surface charging and accurately determine binding energies, particularly with electrically inhomogenous samples, has remained one of the most intractable problems. Beginning perhaps with the Kratos, 'in the lens' electrostatic mirror/electron source coupled with a magnetic snorkel lens, a number of concepts have been advanced which take a quite different conceptual approach to charge compensation. They differ in a number of quite fundamental ways to the electron flood type compensators widely used and absolutely essential with instruments based on monochromatised sources. The concept of the local return of secondary electrons to their point of emission, largely negates the problems associated with differential charging across different regions of the surface, and suggests the possibility of overcoming one of the central limitations of XPS, that is the inability to compare absolute binding energies of species in different electrical as well as chemical environments. The general status of charge compensation and the use of internal binding energy references in XPS will be reviewed, along with some practical examples of where these techniques work, and where there is clearly still room for further development. Copyright (1999) Australian X-ray Analytical Association Inc

  20. The Impact of Different Forms of Foreign Capital Inflow on GDPpc in CEE Countries during the Crisis up to 2012

    Directory of Open Access Journals (Sweden)

    Goran Pitic

    2014-09-01

    Full Text Available This paper represents further analysis of the authors of previous research on the impact of foreign capital inflow on GDPpc. The analysis includes nine countries of Central and Southeastern Europe - CEE-9 in the period 2005-2012. The previous research has shown that foreign capital inflow (foreign direct investment /FDI/, portfolio investment /PI/, remittances /REM/ and cross-border credits/CBC/ had an impact on an increase in GDPpc and that CBC inflow had the greatest impact on an increase in GDPpc in the period 2005-2012. In this paper, we use correlation and panel regression in order to determine the cause and impact of the available source of financing on the level of GDPpc. Research showed that the influence of the crisis was evident from 2008 onwards and that CBC had the greatest impact on an increase in GDPpc in the period 2005-2012. Under conditions of a lack of financial resources from domestic sources, coupled with an insufficiently attractive business environment, CBCpc inflow had the greatest impact on an increase in GDPpc. Such a high significance of CBCpc is the result of the fact that CEE-9 failed to create a sufficiently attractive business environment. In an attempt to catch up with advanced EU economies, CEE-9 had to finance the increasing amount of investment from the relatively most expensive sources, such as CBCs, during the crisis. The problems related to the quality of the business environment and underdeveloped institutions contributed to a weak relationship between FDIpc and GDPpc. A weak indirect relationship also exists between PIpc and the level of GDPpc. A strong indirect relationship between REMpc and GDPpc was also observed. The correlation analysis showed that GDPpc was directly and strongly related to CBCpc.

  1. Photo-catalytic degradation of an oil-water emulsion using the photo-fenton treatment process: effects and statistical optimization.

    Science.gov (United States)

    Tony, Maha A; Purcell, P J; Zhao, Y Q; Tayeb, A M; El-Sherbiny, M F

    2009-02-01

    The application of advanced oxidation processes (AOPs) to the treatment of an effluent contaminated with hydrocarbon oils was investigated. The AOPs conducted were Fe2+/H2O2 (Fenton's reagent), Fe2+/H2O2/UV (Photo-Fenton's reagent) and UV-photolysis. These technologies utilize the very strong oxidizing power of hydroxyl radicals to oxidize organic compounds to harmless end products such as CO2 and H2O. A synthetic wastewater generated by emulsifying diesel oil and water was used. This wastewater might simulate, for example, a waste resulting from a hydrocarbon oil spill, onto which detergent was sprayed. The experiments utilising the Photo-Fenton treatment method with an artificial UV source, coupled with Fenton's reagent, suggest that the hydrocarbon oil is readily degradable, but that the emulsifying agent is much more resistant to degradation. The results showed that the COD (chemical oxygen demand) removal rate was affected by the Photo-Fenton parameters (Fe2+, H2O2 concentrations and the initial pH) of the aqueous solution. In addition, the applicability of the treatment method to a 'real' wastewater contaminated with hydrocarbon oil is demonstrated. The 'real' wastewater was sourced at a nearby car-wash facility located at a petroleum filling station and the experimental results demonstrate the effectiveness of the treatment method in this case. A statistical analysis of the experimental data using the Statistical Analysis System (SAS) and the response surface methodology (RSM) based on the experimental design was applied to optimize the Photo-Fenton parameters (concentrations of Fe2+, H2O2 and initial pH) and to maximize the COD removal rate (more than 70%).

  2. Government/Industry Partnership on the Security of Radioactive Sources

    International Nuclear Information System (INIS)

    Cefus, Greg; Colhoun, Stefan C.; Freier, Keith D.; Wright, Kyle A.; Herdes, Gregory A.

    2006-01-01

    In the past, industry radiation protection programs were built almost exclusively around radiation safety and the minimization of radiation dose exposure to employees. Over the last decade, and especially the last few years, the emphasis has shifted to include the physical security and enhanced control of radioactive materials. The threat of nuclear and radiological terrorism is a genuine international security concern. In May 2004, the U.S. Department of Energy/U.S. National Nuclear Security Administration unveiled the Global Threat Reduction Initiative (GTRI) to respond to a growing international concern for the proper control and security of radioactive and nuclear materials. An integral part of the GTRI, the International Radiological Threat Reduction (IRTR) Program, was established in February 2002, originally as a Task Force. The IRTR Program is foremost a government-to-government cooperative program with the mission to reduce the risk posed by vulnerable radioactive materials that could be used in a Radioactive Dispersal Device (RDD). However, governments alone cannot prevent the misuse and illicit trafficking of radioactive sources. By expanding the role of private industry as a partner, existing government regulatory infrastructures can be enhanced by formulating and adopting industry self-regulation and self-policing measures. There is international concern regarding the security and control of the vast number of well-logging sources used during oil exploration operations. The prevalence of these sources, coupled with their portability, is a legitimate security concern. The energy exploration industry has well established safety and security protocols and the IRTR Program seeks to build on this foundation. However, the IRTR Program does not have sufficient resources to address the issue without industry assistance, so it is looking to the oil and gas industry to help identify alternative means for accomplishing our mutual objectives. This paper describes

  3. Atmospheric processes affecting the separation of volcanic ash and SO2 in volcanic eruptions: inferences from the May 2011 Grímsvötn eruption

    Science.gov (United States)

    Prata, Fred; Woodhouse, Mark; Huppert, Herbert E.; Prata, Andrew; Thordarson, Thor; Carn, Simon

    2017-09-01

    The separation of volcanic ash and sulfur dioxide (SO2) gas is sometimes observed during volcanic eruptions. The exact conditions under which separation occurs are not fully understood but the phenomenon is of importance because of the effects volcanic emissions have on aviation, on the environment, and on the earth's radiation balance. The eruption of Grímsvötn, a subglacial volcano under the Vatnajökull glacier in Iceland during 21-28 May 2011 produced one of the most spectacular examples of ash and SO2 separation, which led to errors in the forecasting of ash in the atmosphere over northern Europe. Satellite data from several sources coupled with meteorological wind data and photographic evidence suggest that the eruption column was unable to sustain itself, resulting in a large deposition of ash, which left a low-level ash-rich atmospheric plume moving southwards and then eastwards towards the southern Scandinavian coast and a high-level predominantly SO2 plume travelling northwards and then spreading eastwards and westwards. Here we provide observational and modelling perspectives on the separation of ash and SO2 and present quantitative estimates of the masses of ash and SO2 that erupted, the directions of transport, and the likely impacts. We hypothesise that a partial column collapse or sloughing fed with ash from pyroclastic density currents (PDCs) occurred during the early stage of the eruption, leading to an ash-laden gravity intrusion that was swept southwards, separated from the main column. Our model suggests that water-mediated aggregation caused enhanced ash removal because of the plentiful supply of source water from melted glacial ice and from entrained atmospheric water. The analysis also suggests that ash and SO2 should be treated with separate source terms, leading to improvements in forecasting the movement of both types of emissions.

  4. A mass balance approach to investigate arsenic cycling in a petroleum plume.

    Science.gov (United States)

    Ziegler, Brady A; Schreiber, Madeline E; Cozzarelli, Isabelle M; Crystal Ng, G-H

    2017-12-01

    Natural attenuation of organic contaminants in groundwater can give rise to a series of complex biogeochemical reactions that release secondary contaminants to groundwater. In a crude oil contaminated aquifer, biodegradation of petroleum hydrocarbons is coupled with the reduction of ferric iron (Fe(III)) hydroxides in aquifer sediments. As a result, naturally occurring arsenic (As) adsorbed to Fe(III) hydroxides in the aquifer sediment is mobilized from sediment into groundwater. However, Fe(III) in sediment of other zones of the aquifer has the capacity to attenuate dissolved As via resorption. In order to better evaluate how long-term biodegradation coupled with Fe-reduction and As mobilization can redistribute As mass in contaminated aquifer, we quantified mass partitioning of Fe and As in the aquifer based on field observation data. Results show that Fe and As are spatially correlated in both groundwater and aquifer sediments. Mass partitioning calculations demonstrate that 99.9% of Fe and 99.5% of As are associated with aquifer sediment. The sediments act as both sources and sinks for As, depending on the redox conditions in the aquifer. Calculations reveal that at least 78% of the original As in sediment near the oil has been mobilized into groundwater over the 35-year lifespan of the plume. However, the calculations also show that only a small percentage of As (∼0.5%) remains in groundwater, due to resorption onto sediment. At the leading edge of the plume, where groundwater is suboxic, sediments sequester Fe and As, causing As to accumulate to concentrations 5.6 times greater than background concentrations. Current As sinks can serve as future sources of As as the plume evolves over time. The mass balance approach used in this study can be applied to As cycling in other aquifers where groundwater As results from biodegradation of an organic carbon point source coupled with Fe reduction. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Three-dimensional optofluidic device for isolating microbes

    Science.gov (United States)

    Keloth, A.; Paterson, L.; Markx, G. H.; Kar, A. K.

    2015-03-01

    Development of efficient methods for isolation and manipulation of microorganisms is essential to study unidentified and yet-to-be cultured microbes originating from a variety of environments. The discovery of novel microbes and their products have the potential to contribute to the development of new medicines and other industrially important bioactive compounds. In this paper we describe the design, fabrication and validation of an optofluidic device capable of redirecting microbes within a flow using optical forces. The device holds promise to enable the high throughput isolation of single microbes for downstream culture and analysis. Optofluidic devices are widely used in clinical research, cell biology and biomedical engineering as they are capable of performing analytical functions such as controlled transportation, compact and rapid processing of nanolitres to millilitres of clinical or biological samples. We have designed and fabricated a three dimensional optofluidic device to control and manipulate microorganisms within a microfluidic channel. The device was fabricated in fused silica by ultrafast laser inscription (ULI) followed by selective chemical etching. The unique three-dimensional capability of ULI is utilized to integrate microfluidic channels and waveguides within the same substrate. The main microfluidic channel in the device constitutes the path of the sample. Optical waveguides are fabricated at right angles to the main microfluidic channel. The potential of the optical scattering force to control and manipulate microorganisms is discussed in this paper. A 980 nm continuous wave (CW) laser source, coupled to the waveguide, is used to exert radiation pressure on the particle and particle migrations at different flow velocities are recorded. As a first demonstration, device functionality is validated using fluorescent microbeads and initial trials with microalgae are presented.

  6. Characterization of Prototype LSST CCDs

    Energy Technology Data Exchange (ETDEWEB)

    OCONNOR,P.; FRANK, J.; GEARY, J.C.; GILMORE, D.K.; KOTOV, I.; RADEKA, V.; TAKACS, P.; TYSON, J.A.

    2008-06-23

    a number of new devices produced specifically to address LSST's performance goals, including flatness, QE, PSF, dark current, read noise, CTE, cosmetics, and crosstalk. The results indicate that commercially produced, thick n-channel over-depleted CCDs with excellent red response can achieve tight PSF at moderate applied substrate bias with no evidence of persistent image artifacts. We will also report ongoing studies of mosaic assembly techniques to achieve chip-to-chip co-planarity, high fill factor, and thermal stability.

  7. Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices

    Science.gov (United States)

    Chen, Shen-Li; Lin, Chun-Ju; Yu-Ting, Huang

    2018-02-01

    How to effectively enhance the reliability robustness in high-voltage (HV) BCD [(bipolar) complementary metal-oxide semiconductor (CMOS) diffusion metaloxide semiconductor (DMOS)] processes is an important issue. Influences of layouttype dependences on anti-electrostatic discharge (ESD) robustness in a 0.25-μm 60-V process will be studied in this chapter, which includes, in part (1), the traditional striped-type n-channel lateral-diffused MOSFET (nLDMOS), waffle-type nLDMOS, and nLDMOS embedded with a "p-n-p"-arranged silicon-controlled rectifier (SCR) devices in the drain side; and in part (2) a p-channel LDMOS (pLDMOS) with an embedded "p-n-p-n-p"-arranged-type SCR in the drain side (diffusion regions of the drain side is P+-N+-P+-N+-P+). Then, these LDMOS devices are used to evaluate the influence of layout architecture on trigger voltage (Vt1), holding voltage (Vh), and secondary breakdown current (It2). Eventually, the sketching of the layout pattern of a HV LDMOS is a very important issue in the anti-ESD consideration. Also, in part (1), the waffle-type nLDMOS DUT contributes poorly to It2 robustness due to the non-uniform turned-on phenomenon and a narrow channel width per unit finger. Therefore, the It2 robustness of a waffle-type nLDMOS device is decreased about 17% as compared to a traditional striped-type nLDMOS device (reference DUT-1). The ESD abilities of traditional stripedtype and waffle-type nLDMOS devices with an embedded SCR ("p-n-p"-manner arrangement in the drain side) are better than a traditional nLDMOS 224.4% in average. Noteworthy, the nLDMOS-SCR with the "p-n-p" -arranged-type in the drainend is a good structure for the anti-ESD reliability especially in HV usages. Furthermore, in part (2) this layout manner of P+ discrete-island distributions in the drain-side have some impacts on the anti-ESD and anti-latch-up (LU) immunities. All of their It2 values have reached above 6 A; however, the major repercussion is that the Vh value will be

  8. Decay properties of nuclei close to Z = 108 and N = 162

    International Nuclear Information System (INIS)

    Dvorak, Jan

    2007-01-01

    The goal of the research conducted in the frame of this thesis was to investigate the decay properties of the nuclides 269-271 Hs and their daughters using an improved chemical separation and detection system. Shell stabilization was predicted in the region around Z=108 and N=162 in calculations, taking into account possible higher orders of deformations of the nuclei. The nucleus 270 Hs with a closed proton and a closed neutron deformed shell, was predicted to be ''deformed doubly magic''. Nuclei around 270 Hs can be produced only via fusion reactions at picobarn levels, resulting in a production rates of few atoms per day. Investigating short-lived nuclei using rapid chemical separation and subsequent on-line detection methods provides an independent and alternative means to electromagnetic on-line separators. Chemical separation of Hs in the form of HsO 4 provides an excellent tool to study the formation reactions and nuclear structure in this region of the chart of nuclides due to a high overall efficiency and a very high purification factor. The goal was accomplished, as element 108, hassium, was produced in the reaction 248 Cm( 26 Mg,xn) 274-x Hs and chemically isolated. After gas phase separation of HsO 4 , 26 genetically linked decay chains have been observed. These were attributed to decays of three different Hs isotopes produced in the 3-5n evaporation channels. The known decay chain of 269 Hs, the 5n evaporation product, serves as an anchor point, thus allowing the unambiguous assignment of the observed decay chains to the 5n, 4n, and 3n channels, respectively. Decay properties of five nuclei have been unambiguously established for the first time, including the one for the the doubly-magic nuclide 270 Hs. This hassium isotope is the next doubly magic nucleus after the well known 208 Pb and the first experimentally observed even-even nucleus on the predicted N=162 neutron shell. The observed decay properties provide strong indications for enhanced nuclear

  9. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    Science.gov (United States)

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

  10. Synthesis and properties of silicon nanowire devices

    Science.gov (United States)

    Byon, Kumhyo

    Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed

  11. G(sup 4)FET Implementations of Some Logic Circuits

    Science.gov (United States)

    Mojarradi, Mohammad; Akarvardar, Kerem; Cristoleveanu, Sorin; Gentil, Paul; Blalock, Benjamin; Chen, Suhan

    2009-01-01

    of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET

  12. Quasifree (p ,p N ) scattering of light neutron-rich nuclei near N =14

    Science.gov (United States)

    Díaz Fernández, P.; Alvarez-Pol, H.; Crespo, R.; Cravo, E.; Atar, L.; Deltuva, A.; Aumann, T.; Avdeichikov, V.; Beceiro-Novo, S.; Bemmerer, D.; Benlliure, J.; Bertulani, C. A.; Boillos, J. M.; Boretzky, K.; Borge, M. J. G.; Caamaño, M.; Cabanelas, P.; Caesar, C.; Casarejos, E.; Catford, W.; Cederkäll, J.; Chartier, M.; Chulkov, L. V.; Cortina-Gil, D.; Datta Pramanik, U.; Dillmann, I.; Elekes, Z.; Enders, J.; Ershova, O.; Estradé, A.; Farinon, F.; Fernández-Domínguez, B.; Fraile, L. M.; Freer, M.; Galaviz, D.; Geissel, H.; Gernhäuser, R.; Golubev, P.; Göbel, K.; Hagdahl, J.; Heftrich, T.; Heil, M.; Heine, M.; Heinz, A.; Henriques, A.; Holl, M.; Hufnagel, A.; Ignatov, A.; Johansson, H. T.; Jonson, B.; Jurčiukonis, D.; Kalantar-Nayestanaki, N.; Kanungo, R.; Kelic-Heil, A.; Knyazev, A.; Kröll, T.; Kurz, N.; Labiche, M.; Langer, C.; Le Bleis, T.; Lemmon, R.; Lindberg, S.; Machado, J.; Marganiec, J.; Moro, A. M.; Movsesyan, A.; Nacher, E.; Najafi, A.; Nikolskii, E.; Nilsson, T.; Nociforo, C.; Panin, V.; Paschalis, S.; Perea, A.; Petri, M.; Pietras, B.; Pietri, S.; Plag, R.; Reifarth, R.; Ribeiro, G.; Rigollet, C.; Rossi, D.; Röder, M.; Savran, D.; Scheit, H.; Simon, H.; Sorlin, O.; Syndikus, I.; Taylor, J. T.; Tengblad, O.; Thies, R.; Togano, Y.; Vandebrouck, M.; Velho, P.; Volkov, V.; Wagner, A.; Wamers, F.; Weick, H.; Wheldon, C.; Wilson, G.; Winfield, J. S.; Woods, P.; Yakorev, D.; Zhukov, M.; Zilges, A.; Zuber, K.; R3B Collaboration

    2018-02-01

    Background: For many years, quasifree scattering reactions in direct kinematics have been extensively used to study the structure of stable nuclei, demonstrating the potential of this approach. The R 3B collaboration has performed a pilot experiment to study quasifree scattering reactions in inverse kinematics for a stable 12C beam. The results from that experiment constitute the first quasifree scattering results in inverse and complete kinematics. This technique has lately been extended to exotic beams to investigate the evolution of shell structure, which has attracted much interest due to changes in shell structure if the number of protons or neutrons is varied. Purpose: In this work we investigate for the first time the quasifree scattering reactions (p ,p n ) and (p ,2 p ) simultaneously for the same projectile in inverse and complete kinematics for radioactive beams with the aim to study the evolution of single-particle properties from N =14 to N =15 . Method: The structure of the projectiles 23O, 22O, and 21N has been studied simultaneously via (p ,p n ) and (p ,2 p ) quasifree knockout reactions in complete inverse kinematics, allowing the investigation of proton and neutron structure at the same time. The experimental data were collected at the R3B -LAND setup at GSI at beam energies of around 400 MeV/u. Two key observables have been studied to shed light on the structure of those nuclei: the inclusive cross sections and the corresponding momentum distributions. Conclusions: The knockout reactions (p ,p n ) and (p ,2 p ) with radioactive beams in inverse kinematics have provided important and complementary information for the study of shell evolution and structure. For the (p ,p n ) channels, indications of a change in the structure of these nuclei moving from N =14 to N =15 have been observed, i.e., from the 0 d5 /2 shell to the 1 s1 /2 . This supports previous observations of a subshell closure at N =14 for neutron-rich oxygen isotopes and its weakening

  13. Contributions to the study of nuclear reactions mechanism induced by heavy ions on intermediate mass nuclei

    International Nuclear Information System (INIS)

    Avrigeanu, M.

    1982-01-01

    A detailed analysis is presented, based on Hauser-Feshbach statistical model calculations of the γ-ray excitation functions measured in the sup(74,76)Ge ( 12 C, xn) and sup(72,73)Ge ( 16 O,xnyp) reactions. The most usual quantities provided by the in beam γ-ray measurements such as the cross sections for the population of the final states as well as the decay scheme and the degree of alignment of these states mainly offer the means of testing models of both the reaction mechanism and nuclear properties of high excitation energies, since they concentrate information on the whole reaction process. Experimental information on sup(85,86)Sr and sup(85,86)Y, γ-decay scheme and the excitation functions for the population of the final states were obtained by sub(74,76)Ge ( 12 C,αn), n = 2-4, sup(74,76)Ge ( 14 N,xn) n = 3-5, sup(72,73)Ge ( 16 O,xnyp), x = 1-3, y=1 reactions at incident energies between 35 and 60 MW. Statistical model calculations in the Hauser-Feshbach formalism have been compared with the experimental γ-ray excitation functions. The competitive emission of neutrons, protons, alpha particles and gamma rays from the compound nucleus has been considered in the calculations. The calculations describe satisfactorily the total cross sections for the population of the 2n, 3n and 4n channels for 12 C + sup(74,76)Ge and 2n, np, 3n and 2np channels for 16 O + 72 Ge. The calculations are sensitive to the characteristics of the excited levels (such as spin values) but htis this sensitivity could be exploited with some reliability only if one makes use of a rather complete level scheme in the calculations. In the case of 2n, np, 3n and 2 np channels for 16 O+ 73 Ge one concludes on the reliability of consideration some structural aspects in the calculations

  14. Contribution to the study of {pi}N {yields} {pi}{sub 1}{pi}{sub 2}N reactions with creation of an intermediate N{sup *}{sub 3/2} {sub (1236)} isobar from 0.4 to 1.5 GeV; Contribution a l'etude des reactions {pi}N {yields} {pi}{sub 1}{pi}{sub 2}N avec creation d'un isobare intermediaire N{sup *}{sub 3/2} {sub (1236)} de 0.4 a 1.5 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Merlo, J P [Commissariat a l' Energie Atomique, 91 - Saclay (France). Centre d' Etudes Nucleaires. Division de la Physique, Departement de Physique des Particules Elementaires

    1976-07-01

    The one pion production reaction {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} has been studied up to 1.5 GeV. The {pi}{sup 0} angular distribution measured by counter techniques has been compared to bubble chamber data. Angular distributions are interpreted in the hypothesis of formation of the intermediate N{sup *}{sub 3/2}(1236) isobar. Angular distributions for isobar production and decay in one pion production reactions {pi}N {yields} {pi}{sub 1}N{sup *} (N{sup *} {yields} {pi}{sub 2}N], are calculated in chapter II. {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} experimental results are reported and analyzed in chapter III. An estimation of the pion-isobar partial wave amplitudes in reaction {pi}{sup +}p {yields} {pi}{sup 0}N{sup *++}{sub 3/2}(1236) has been tempted. Comparison with {pi}{sup +}p phase shift analyses is made. Bubble chamber data for {pi}{sup -}p {yields} {pi}{sup -}{pi}{sup +}n channel are presented at the end of chapter III. (author) [French] La reaction de production d'un pion {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} a ete etudiee jusqu'a 1.5 GeV. La distribution angulaire du {pi}{sup 0} mesuree par la technique des compteurs a ete comparee aux resultats de chambre a bulles. Les distributions angulaires sont interpretees dans l'hypothese de la formation de l'isobare N{sup *}{sub 3/2}(1236) intermediaire. Les distributions angulaires de production et de desintegration de l'isobare dans les reactions de production d'un pion, {pi}N {yields} {pi}{sub 1}N{sup *} (N{sup *} {yields} {pi}{sub 2}N], sont calculees au second chapitre. Les resultats experimentaux de la voie {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} sont presentes et analyses au troisieme chapitre. Une evaluation des amplitudes d'ondes partielles de production de l'isobare N{sup *}{sub 3/2}(1236) dans la reaction {pi}{sup +}p {yields} {pi}{sup 0}N{sup *++}{sub 3/2}(1236) a ete tentee. Une comparaison est faite avec les analyses en dephasages de l'interaction {pi}{sup +}p. Les

  15. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  16. Contribution to the study of {pi}N {yields} {pi}{sub 1}{pi}{sub 2}N reactions with creation of an intermediate N{sup *}{sub 3/2} {sub (1236)} isobar from 0.4 to 1.5 GeV; Contribution a l'etude des reactions {pi}N {yields} {pi}{sub 1}{pi}{sub 2}N avec creation d'un isobare intermediaire N{sup *}{sub 3/2} {sub (1236)} de 0.4 a 1.5 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Merlo, J.P. [Commissariat a l' Energie Atomique, 91 - Saclay (France). Centre d' Etudes Nucleaires. Division de la Physique, Departement de Physique des Particules Elementaires

    1976-07-01

    The one pion production reaction {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} has been studied up to 1.5 GeV. The {pi}{sup 0} angular distribution measured by counter techniques has been compared to bubble chamber data. Angular distributions are interpreted in the hypothesis of formation of the intermediate N{sup *}{sub 3/2}(1236) isobar. Angular distributions for isobar production and decay in one pion production reactions {pi}N {yields} {pi}{sub 1}N{sup *} (N{sup *} {yields} {pi}{sub 2}N], are calculated in chapter II. {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} experimental results are reported and analyzed in chapter III. An estimation of the pion-isobar partial wave amplitudes in reaction {pi}{sup +}p {yields} {pi}{sup 0}N{sup *++}{sub 3/2}(1236) has been tempted. Comparison with {pi}{sup +}p phase shift analyses is made. Bubble chamber data for {pi}{sup -}p {yields} {pi}{sup -}{pi}{sup +}n channel are presented at the end of chapter III. (author) [French] La reaction de production d'un pion {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} a ete etudiee jusqu'a 1.5 GeV. La distribution angulaire du {pi}{sup 0} mesuree par la technique des compteurs a ete comparee aux resultats de chambre a bulles. Les distributions angulaires sont interpretees dans l'hypothese de la formation de l'isobare N{sup *}{sub 3/2}(1236) intermediaire. Les distributions angulaires de production et de desintegration de l'isobare dans les reactions de production d'un pion, {pi}N {yields} {pi}{sub 1}N{sup *} (N{sup *} {yields} {pi}{sub 2}N], sont calculees au second chapitre. Les resultats experimentaux de la voie {pi}{sup +}p {yields} {pi}{sup +}p{pi}{sup 0} sont presentes et analyses au troisieme chapitre. Une evaluation des amplitudes d'ondes partielles de production de l'isobare N{sup *}{sub 3/2}(1236) dans la reaction {pi}{sup +}p {yields} {pi}{sup 0}N{sup *++}{sub 3/2}(1236) a ete tentee. Une comparaison est faite avec les analyses en

  17. Subglacial drainage patterns of Devon Island, Canada: detailed comparison of rivers and subglacial meltwater channels

    Science.gov (United States)

    Grau Galofre, Anna; Jellinek, A. Mark; Osinski, Gordon R.; Zanetti, Michael; Kukko, Antero

    2018-04-01

    Subglacial meltwater channels (N-channels) are attributed to erosion by meltwater in subglacial conduits. They exert a major control on meltwater accumulation at the base of ice sheets, serving as drainage pathways and modifying ice flow rates. The study of exposed relict subglacial channels offers a unique opportunity to characterize the geomorphologic fingerprint of subglacial erosion as well as study the structure and characteristics of ice sheet drainage systems. In this study we present detailed field and remote sensing observations of exposed subglacial meltwater channels in excellent preservation state on Devon Island (Canadian Arctic Archipelago). We characterize channel cross section, longitudinal profiles, and network morphologies and establish the spatial extent and distinctive characteristics of subglacial drainage systems. We use field-based GPS measurements of subglacial channel longitudinal profiles, along with stereo imagery-derived digital surface models (DSMs), and novel kinematic portable lidar data to establish a detailed characterization of subglacial channels in our field study area, including their distinction from rivers and other meltwater drainage systems. Subglacial channels typically cluster in groups of ˜ 10 channels and are oriented perpendicular to active or former ice margins. Although their overall direction generally follows topographic gradients, channels can be oblique to topographic gradients and have undulating longitudinal profiles. We also observe that the width of first-order tributaries is 1 to 2 orders of magnitude larger than in Devon Island river systems and approximately constant. Furthermore, our findings are consistent with theoretical expectations drawn from analyses of flow driven by gradients in effective water pressure related to variations in ice thickness. Our field and remote sensing observations represent the first high-resolution study of the subglacial geomorphology of the high Arctic, and provide

  18. Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad

    2009-01-01

    Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures

  19. Soft x-ray imager (SXI) onboard the NeXT satellite

    Science.gov (United States)

    Tsuru, Takeshi Go; Takagi, Shin-Ichiro; Matsumoto, Hironori; Inui, Tatsuya; Ozawa, Midori; Koyama, Katsuji; Tsunemi, Hiroshi; Hayashida, Kiyoshi; Miyata, Emi; Ozawa, Hideki; Touhiguchi, Masakuni; Matsuura, Daisuke; Dotani, Tadayasu; Ozaki, Masanobu; Murakami, Hiroshi; Kohmura, Takayoshi; Kitamoto, Shunji; Awaki, Hisamitsu

    2006-06-01

    We give overview and the current status of the development of the Soft X-ray Imager (SXI) onboard the NeXT satellite. SXI is an X-ray CCD camera placed at the focal plane detector of the Soft X-ray Telescopes for Imaging (SXT-I) onboard NeXT. The pixel size and the format of the CCD is 24 x 24μm (IA) and 2048 x 2048 x 2 (IA+FS). Currently, we have been developing two types of CCD as candidates for SXI, in parallel. The one is front illumination type CCD with moderate thickness of the depletion layer (70 ~ 100μm) as a baseline plan. The other one is the goal plan, in which we develop back illumination type CCD with a thick depletion layer (200 ~ 300μm). For the baseline plan, we successfully developed the proto model 'CCD-NeXT1' with the pixel size of 12μm x 12μm and the CCD size of 24mm x 48mm. The depletion layer of the CCD has reached 75 ~ 85μm. The goal plan is realized by introduction of a new type of CCD 'P-channel CCD', which collects holes in stead of electrons in the common 'N-channel CCD'. By processing a test model of P-channel CCD we have confirmed high quantum efficiency above 10 keV with an equivalent depletion layer of 300μm. A back illumination type of P-channel CCD with a depletion layer of 200μm with aluminum coating for optical blocking has been also successfully developed. We have been also developing a thermo-electric cooler (TEC) with the function of the mechanically support of the CCD wafer without standoff insulators, for the purpose of the reduction of thermal input to the CCD through the standoff insulators. We have been considering the sensor housing and the onboard electronics for the CCD clocking, readout and digital processing of the frame date.

  20. Ambipolar charge carrier transport in organic semiconductor blends of C{sub 60} and CuPc; Ambipolarer Ladungstransport in organischen Halbleiter-Mischschichten bestehend aus C{sub 60} und CuPc

    Energy Technology Data Exchange (ETDEWEB)

    Bronner, Markus

    2008-06-20

    In this work ambipolar charge carrier transport is realised in organic field effect transistors using mixtures of p-conductive copper phthalocyanine and n-conductive buckminster fullerene as active layer. These blends are known from research on organic solar cells and can be considered as a model system for ambipolar transport. The field effect mobilities for electrons and holes can be adjusted by the variation of the mixing ratio. Thereby balanced mobilities for both charge carrier types are possible. In this work the variation of mobility, threshold voltage and electronic energy levels with the mixing ratio is discussed. The charge carrier mobilities are strongly reduced upon dilution of the respective conducting phase by the other species. This shows that transport of each carrier species occurs by percolation through the respective phase in the blend. A strong correlation between contact resistance and mobility indicates that carrier injection is diffusion limited. A charge redistribution in the copper phthalocyanine causes a hole accumulation at the organic/organic interface and affects thereby the threshold voltage for holes. The electronic structure was investigated by photoelectron spectroscopy. It was found that there is no chemical reaction between the different materials. The common work function of these blends changes linearly between the work functions of the neat materials. Moreover, a constant ionisation potential for the highest occupied molecular orbitals of the two materials and the core levels is obtained. Furthermore ambipolar inverters using mixed organic semiconductor layers were made and compared to complementary inverters consisting of discrete p- and n-channel transistors. The experimental findings and concomitant simulations demonstrate the need for balanced electron and hole mobilities in order to achieve symmetric inverter characteristics. However, they also reveal the superior performance of true complementary logic inverters towards

  1. NASA Tech Briefs, December 2008

    Science.gov (United States)

    2008-01-01

    Topics covered include: Crew Activity Analyzer; Distributing Data to Hand-Held Devices in a Wireless Network; Reducing Surface Clutter in Cloud Profiling Radar Data; MODIS Atmospheric Data Handler; Multibeam Altimeter Navigation Update Using Faceted Shape Model; Spaceborne Hybrid-FPGA System for Processing FTIR Data; FPGA Coprocessor for Accelerated Classification of Images; SiC JFET Transistor Circuit Model for Extreme Temperature Range; TDR Using Autocorrelation and Varying-Duration Pulses; Update on Development of SiC Multi-Chip Power Modules; Radio Ranging System for Guidance of Approaching Spacecraft; Electromagnetically Clean Solar Arrays; Improved Short-Circuit Protection for Power Cells in Series; Electromagnetically Clean Solar Arrays; Logic Gates Made of N-Channel JFETs and Epitaxial Resistors; Improved Short-Circuit Protection for Power Cells in Series; Communication Limits Due to Photon-Detector Jitter; System for Removing Pollutants from Incinerator Exhaust; Sealing and External Sterilization of a Sample Container; Converting EOS Data from HDF-EOS to netCDF; HDF-EOS 2 and HDF-EOS 5 Compatibility Library; HDF-EOS Web Server; HDF-EOS 5 Validator; XML DTD and Schemas for HDF-EOS; Converting from XML to HDF-EOS; Simulating Attitudes and Trajectories of Multiple Spacecraft; Specialized Color Function for Display of Signed Data; Delivering Alert Messages to Members of a Work Force; Delivering Images for Mars Rover Science Planning; Oxide Fiber Cathode Materials for Rechargeable Lithium Cells; Electrocatalytic Reduction of Carbon Dioxide to Methane; Heterogeneous Superconducting Low-Noise Sensing Coils; Progress toward Making Epoxy/Carbon-Nanotube Composites; Predicting Properties of Unidirectional-Nanofiber Composites; Deployable Crew Quarters; Nonventing, Regenerable, Lightweight Heat Absorber; Miniature High-Force, Long-Stroke SMA Linear Actuators; "Bootstrap" Configuration for Multistage Pulse-Tube Coolers; Reducing Liquid Loss during Ullage Venting in

  2. The water vapour continuum in near-infrared windows - Current understanding and prospects for its inclusion in spectroscopic databases

    Science.gov (United States)

    Shine, Keith P.; Campargue, Alain; Mondelain, Didier; McPheat, Robert A.; Ptashnik, Igor V.; Weidmann, Damien

    2016-09-01

    report pilot measurements of the water vapour self-continuum using a supercontinuum laser source coupled to an FTS. Such improvements, as well as additional measurements and analyses in other laboratories, would enable the inclusion of the water vapour continuum in future spectroscopic databases, and therefore allow for a more reliable forward modelling of the radiative properties of the atmosphere. It would also allow a more confident assessment of different theoretical descriptions of the underlying cause or causes of continuum absorption.

  3. Results from Accelerator Driven TRIGA Reactor Experiments at The University of Texas at Austin

    International Nuclear Information System (INIS)

    O'Kelly, S.; Braisted, J.; Krause, M.; Welch, L.

    2008-01-01

    Accelerator Driven Transmutation of High-Level Waste (ATW) is one possible solution to the fuel reprocessing back-end problem for the disposal of high level waste such as minor actinides (Am, Np or Cm) and long-lived fission products. International programs continue to support research towards the eventual construction and operation of a proton accelerator driven spallation neutron source coupled to a subcritical 'neutron amplifier' for more efficient HLW transmutation. This project was performed under DOE AFCI Reactor-Accelerator Coupling Experiments (RACE). A 20 MeV Electron Linac was installed in the BP no 5 cave placing neutron source adjacent to an offset reactor core to maximize neutron coupling with available systems. Asymmetric neutron injection 'wasted' neutrons due to high leakage but sufficient neutrons were available to raise reactor power to ∼100 watts. The Linac provided approximately 100 mA but only 50% reached target. The Linac cooling system could not prevent overheating at frequencies over 200 Hz. The Linac electron beam had harmonics of primary frequency and periodic low frequency pulse intensity changes. Neutron detection using fission chambers in current mode eliminated saturation dead time and produced better sensitivity. The Operation of 'dual shielded' fission chambers reduced electron noise from linac. Benchmark criticality calculation using start-up data showed that the MCNPX model overestimates reactivity. TRIGA core was loaded to just slightly supercritical by adding graphite elements and measuring reactivity of $0.037. MCNPX modeled TRIGA core with and without graphite to arrive at 'true' measured subcritical multiplication of 0.998733± 0.00069. Thus, Alpha for the UT-RACE TRIGA core was approximately 155.99 s -1 . The Stochastic Feynman-Alpha Method (SFM) accuracy was evaluated during transients and reactivity changes. SFM was shown to be a potential real-time method of reactivity determination in future ADSS but requires stable

  4. Final corrective action study for the former CCC/USDA facility in Ramona, Kansas.

    Energy Technology Data Exchange (ETDEWEB)

    LaFreniere, L. M. (Environmental Science Division)

    2011-04-20

    Past operations at a grain storage facility formerly leased and operated by the Commodity Credit Corporation of the U.S. Department of Agriculture (CCC/USDA) in Ramona, Kansas, resulted in low concentrations of carbon tetrachloride in groundwater that slightly exceed the regulatory standard in only one location. As requested by the Kansas Department of Health and Environment, the CCC/USDA has prepared a Corrective Action Study (CAS) for the facility. The CAS examines corrective actions to address groundwater impacted by the former CCC/USDA facility but not releases caused by other potential groundwater contamination sources in Ramona. Four remedial alternatives were considered in the CAS. The recommended remedial alternative in the CAS consists of Environmental Use Control to prevent the inadvertent use of groundwater as a water supply source, coupled with groundwater monitoring to verify the continued natural improvement in groundwater quality. The Commodity Credit Corporation of the U.S. Department of Agriculture (CCC/USDA) has directed Argonne National Laboratory to prepare a Corrective Action Study (CAS), consistent with guidance from the Kansas Department of Health and Environment (KDHE 2001a), for the CCC/USDA grain storage facility formerly located in Ramona, Kansas. This effort is pursuant to a KDHE (2007a) request. Although carbon tetrachloride levels at the Ramona site are low, they remain above the Kansas Tier 2 risk-based screening level (RBSL) and the U.S. Environmental Protection Agency (EPA) maximum contaminant level (MCL) of 5 {micro}g/L (Kansas 2003, 2004). In its request for the CAS, the KDHE (2007a) stated that, because of these levels, risk is associated with potential future exposure to contaminated groundwater. The KDHE therefore determined that additional measures are warranted to limit future use of the property and/or exposure to contaminated media as part of site closure. The KDHE further requested comparison of at least two corrective

  5. Implementation and dissemination of a transition of care program for rural veterans: a controlled before and after study

    Directory of Open Access Journals (Sweden)

    Chelsea Leonard

    2017-10-01

    Full Text Available Abstract Background Adapting promising health care interventions to local settings is a critical component in the dissemination and implementation process. The Veterans Health Administration (VHA rural transitions nurse program (TNP is a nurse-led, Veteran-centered intervention designed to improve transitional care for rural Veterans funded by VA national offices for dissemination to other VA sites serving a predominantly rural Veteran population. Here, we describe our novel approach to the implementation and evaluation = the TNP. Methods This is a controlled before and after study that assesses both implementation and intervention outcomes. During pre-implementation, we assessed site context using a mixed method approach with data from diverse sources including facility-level quantitative data, key informant and Veteran interviews, observations of the discharge process, and a group brainstorming activity. We used the Practical Robust Implementation and Sustainability Model (PRISM to inform our inquiries, to integrate data from all sources, and to identify factors that may affect implementation. In the implementation phase, we will use internal and external facilitation, paired with audit and feedback, to encourage appropriate contextual adaptations. We will use a modified Stirman framework to document adaptations. During the evaluation phase, we will measure intervention and implementation outcomes at each site using the RE-AIM framework (Reach, Effectiveness, Adoption, Implementation, and Maintenance. We will conduct a difference-in-differences analysis with propensity-matched Veterans and VA facilities as a control. Our primary intervention outcome is 30-day readmission and Emergency Department visit rates. We will use our findings to develop an implementation toolkit that will inform the larger scale-up of the TNP across the VA. Discussion The use of PRISM to inform pre-implementation evaluation and synthesize data from multiple sources

  6. South Asian aerosols in perspective: Preface to the special issue

    Science.gov (United States)

    Moorthy, K. Krishna; Satheesh, S. K.; Sarin, M. M.; Panday, Arnico K.

    2016-01-01

    The south Asian region is one the world's most populous and fast-developing regions. The more than 1.7 billion population (˜24% of the world population) with highly diverse living habits, fast growing industrial and transport sectors, large and increasing demand for power, diverse fuel use for domestic and industrial purposes, and equally diverse geographical features make this region a large cauldron of emissions and atmospheric processes. It is being increasingly recognized to be among the global hotspots of aerosols and anthropogenic trace gases. The complex geography of this region adds considerable amount of natural aerosols (sea spray, windblown desert dust, pollen, etc) into the atmosphere, which mix with the man-made ones, making the aerosol environment one of the most complex in the world. The large spatial diversity of the sources coupled with the varying atmospheric dynamics, driven by the contrasting monsoons and the topography, make South Asia's aerosol and pollution very difficult to characterize, to model and to plan effective mitigation measures, despite the fairly good knowledge on their implications to radiative and climate forcing, health effects and environmental degradation. In the recent years, there have been several reports on the impact of aerosols (more importantly black carbon - BC) on the regional and global climate system including Asian monsoon, with the caveats of long-term impacts on the livelihoods of tens of millions of people in this region; though specifics of these are not yet unequivocally established. While tropospheric perturbations would produce strong regional signatures, their global impacts still remain marginally above the uncertainty levels (IPCC, 2013). There have been several recent investigations showing that deposition of aerosol black carbon (BC) on snow can reduce the snow albedo, leading to enhanced absorption of solar radiation and hence faster melting rates of glaciers. Though several investigators have

  7. Improvements to the on-line mass separator, RAMA, and the beta-delayed charged-particle emission of proton-rich sd shell nuclei

    International Nuclear Information System (INIS)

    Ognibene, T.J.

    1996-03-01

    To overcome the extreme difficulties encountered in the experimental decay studies of proton drip line nuclei, several techniques have been utilized, including a helium-jet transport system, particle identification detectors and mass separation. Improvements to the ion source/extraction region of the He-jet coupled on-line Recoil Atom Mass Analyzer (RAMA) and its target/ion source coupling resulted in significant increases in RAMA efficiencies and its mass resolution, as well as reductions in the overall transit time. At the 88-Inch Cyclotron at LBNL, the decays of 31 Cl, 27 P and 28 P, with half-lives of 150 msec, 260 msec and 270.3 msec, respectively, were examined using a he-jet and low-energy gas ΔE-gas ΔE-silicon E detector telescopes. Total beta-delayed proton branches of 0.3% and 0.07% in 31 Cl and 27 P, respectively, were estimated. Several proton peaks that had been previously assigned to the decay of 31 Cl were shown to be from the decay of 25 Si. In 27 P, two proton groups at 459 ± 14 keV and 610 ± 11 keV, with intensities of 7 ± 3% and 92 ± 4% relative to the main (100%) group were discovered. The Gamow-Teller component of the preceding beta-decay of each observed proton transition was compared to results from shell model calculations. Finally, a new proton transition was identified, following the β-decay of 28 P, at 1,444 ± 12 keV with a 1.7 ± 0.5% relative intensity to the 100% group. Using similar low-energy detector telescopes and the mass separator TISOL at TRIUMF, the 109 msec and 173 msec activities, 17 Ne and 33 Ar, were studied. A new proton group with energy 729 ± 15 keV was observed following the beta-decay of 17 Ne. Several discrepancies between earlier works as to the energies, intensities and assignments of several proton transitions from 17 Ne and 33 Ar were resolved

  8. Trace gas emissions from the production and use of domestic biofuels in Zambia measured by open-path Fourier transform infrared spectroscopy

    Science.gov (United States)

    Bertschi, Isaac T.; Yokelson, Robert J.; Ward, Darold E.; Christian, Ted J.; Hao, Wei Min

    2003-07-01

    Domestic biomass fuels (biofuels) were recently estimated to be the second largest source of carbon emissions from global biomass burning. Wood and charcoal provide approximately 90% and 10% of domestic energy in tropical Africa. In September 2000, we used open-path Fourier transform infrared (OP-FTIR) spectroscopy to quantify 18 of the most abundant trace gases emitted by wood and charcoal cooking fires and an earthen charcoal-making kiln in Zambia. These are the first in situ measurements of an extensive suite of trace gases emitted by tropical biofuel burning. We report emission ratios (ER) and emission factors (EF) for (in order of abundance) carbon dioxide (CO2), carbon monoxide (CO), methane (CH4), acetic acid (CH3COOH), methanol (CH3OH), formaldehyde (HCHO), ethene (C2H4), ammonia (NH3), acetylene (C2H2), nitric oxide (NO), ethane (C2H6), phenol (C6H5OH), propene (C3H6), formic acid (HCOOH), nitrogen dioxide (NO2), hydroxyacetaldehyde (HOCH2CHO), and furan (C4H4O). Compared to previous work, our emissions of organic acids and NH3 are 3-6.5 times larger. Another significant finding is that reactive oxygenated organic compounds account for 70-80% of the total nonmethane organic compounds (NMOC). For most compounds, the combined emissions from charcoal production and charcoal burning are larger than the emissions from wood fires by factors of 3-10 per unit mass of fuel burned and ˜2 per unit energy released. We estimate that Zambian savanna fires produce more annual CO2, HCOOH, and NOx than Zambian biofuel use by factors of 2.5, 1.7, and 5, respectively. However, biofuels contribute larger annual emissions of CH4, CH3OH, C2H2, CH3COOH, HCHO, and NH3 by factors of 5.1, 3.9, 2.7, 2.4, 2.2, and 2.0, respectively. Annual CO and C2H4 emissions are approximately equal from both sources. Coupling our data with recent estimates of global biofuel consumption implies that global biomass burning emissions for several compounds are significantly larger than previously

  9. COG10, Multiparticle Monte Carlo Code System for Shielding and Criticality Use

    International Nuclear Information System (INIS)

    2007-01-01

    1 - Description of program or function: COG is a modern, full-featured Monte Carlo radiation transport code which provides accurate answers to complex shielding, criticality, and activation problems. COG was written to be state-of-the-art and free of physics approximations and compromises found in earlier codes. COG is fully 3-D, uses point-wise cross sections and exact angular scattering, and allows a full range of biasing options to speed up solutions for deep penetration problems. Additionally, a criticality option is available for computing Keff for assemblies of fissile materials. ENDL or ENDFB cross section libraries may be used. COG home page: http://www-phys.llnl.gov/N_Div/COG/. Cross section libraries are included in the package. COG can use either the LLNL ENDL-90 cross section set or the ENDFB/VI set. Analytic surfaces are used to describe geometric boundaries. Parts (volumes) are described by a method of Constructive Solid Geometry. Surface types include surfaces of up to fourth order, and pseudo-surfaces such as boxes, finite cylinders, and figures of revolution. Repeated assemblies need be defined only once. Parts are visualized in cross-section and perspective picture views. Source and random-walk biasing techniques may be selected to improve solution statistics. These include source angular biasing, importance weighting, particle splitting and Russian roulette, path-length stretching, point detectors, scattered direction biasing, and forced collisions. Criticality - For a fissioning system, COG will compute Keff by transporting batches of neutrons through the system. Activation - COG can compute gamma-ray doses due to neutron-activated materials, starting with just a neutron source. Coupled Problems - COG can solve coupled problems involving neutrons, photons, and electrons. 2 - Methods:COG uses Monte Carlo methods to solve the Boltzmann transport equation for particles traveling through arbitrary 3-dimensional geometries. Neutrons, photons

  10. The microbial ferrous wheel in a neutral pH groundwater seep

    Directory of Open Access Journals (Sweden)

    Eric eRoden

    2012-05-01

    Full Text Available Evidence for microbial Fe redox cycling was documented in a circumneutral pH groundwater seep near Bloomington, Indiana. Geochemical and microbiological analyses were conducted at two sites, a semi-consolidated microbial mat and a floating puffball structure. In situ voltammetric microelectrode measurements revealed steep opposing gradients of O2 and Fe(II at both sites, similar to other groundwater seep and sedimentary environments known to support microbial Fe redox cycling. The puffball structure showed an abrupt increase in dissolved Fe(II just at its surface (~ 5 cm depth, suggesting an internal Fe(II source coupled to active Fe(III reduction. MPN enumerations detected microaerophilic Fe(II-oxidizing bacteria (FeOB and dissimilatory Fe(III-reducing bacteria (FeRB at densities of 102-105 cells mL-1 in samples from both sites. In vitro Fe(III reduction experiments revealed the potential for immediate reduction (no lag period of native Fe(III oxides. Conventional full-length 16S rRNA gene clone libraries were compared withhigh throughput barcode sequencing of the V1, V4 or V6 variable regions of 16S rRNA genes in order to evaluate the extent to which new sequencing approaches could provide enhanced insight into the composition of Fe redox cycling microbial community structure. The composition of the clone libraries suggested a lithotroph-dominated microbial community centered around taxa related to known FeOB (e.g. Gallionella, Sideroxydans, Aquabacterium. Sequences related to recognized FeRB (e.g. Rhodoferax, Aeromonas, Geobacter, Desulfovibrio were also well represented. Overall, sequences related to known FeOB and FeRB accounted for 88 and 59% of total clone sequences in the mat and puffball libraries, respectively. Taxa identified in the barcode libraries showed partial overlap with the clone libraries, but were not always consistent across different variable regions and sequencing platforms. However, the barcode libraries provided

  11. Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

    Science.gov (United States)

    Nagaiah, Padmaja

    As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

  12. Indium antimonide quantum well structures for electronic device applications

    Science.gov (United States)

    Edirisooriya, Madhavie

    The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

  13. g-factor of the Kπ = 14+ isomer in 176 W

    International Nuclear Information System (INIS)

    Ionescu-Bujor, M.; Iordachescu, A.; Marginean, N.; Brandolini, F.; Pavan, P.; Lenzi, S.M.; De Poli, M.; Gadea, A.; Martinez, T.; Medina, N.H.; Ribas, R.V.; Podolyak, Zs.

    2000-01-01

    In the deformed A ≅ 180 nuclei with β 2 ≅ 0.25 multi-quasiparticle intrinsic states are able to compete with rotational structures as both proton and neutron Fermi surfaces are close to nucleon orbits with large projections Ω on the prolate symmetry axis. Due to the approximate conservation of the K quantum number, these states often have hindered decays with half-lives ranging from nanoseconds to years. The decay characteristics of the high-K isomers, as well as the properties of the collective bands built on them, were subject of detailed experimental studies over the last decade. Particular attention has been devoted to the apparent breakdown of the K-selection rule observed experimentally in the decay of several high-spin isomeric states of the A ≅ 180 region. A very interesting high-K isomer showing in its decay a severe violation of the K-selection rule has been recently found in 176 W. The isomeric state, with K π = 14 + , T 1/2 = 35(10) ns and E x =3746 keV, de-excites predominantly to states with K=0, bypassing available levels of intermediate K. To elucidate the isomer underlying structure, an experiment to determine its the g-factor has been performed at the LNL XTU-tandem, by applying the time-differential perturbed angular distribution (TDPAD) method in an external magnetic field. The isomer was populated in the 164 Dy( 16 O,4n) 176 W reaction at a bombarding energy of 83 MeV. The 16 O beam has been pulsed with a pulse width of 1.5 ns at a repetition period of 800 ns. In view of the very low isomer population (about 2% of the 4n channel), a high suppression of the continuous beam in-between the beam bursts was necessary for a proper observation of the isomeric decay γ-lines. The target consisted of 0.5 mg/cm 2 metallic 164 Dy on thick Pb backing in which both the recoiling 176 W nuclei and the projectiles were stopped. Two planar Ge detectors and two Ge detectors of 25% efficiency placed at the angles ± 135 angle and ± 45 angle with respect

  14. Decay properties of nuclei close to Z = 108 and N = 162

    Energy Technology Data Exchange (ETDEWEB)

    Dvorak, Jan

    2007-07-12

    The goal of the research conducted in the frame of this thesis was to investigate the decay properties of the nuclides {sup 269-271}Hs and their daughters using an improved chemical separation and detection system. Shell stabilization was predicted in the region around Z=108 and N=162 in calculations, taking into account possible higher orders of deformations of the nuclei. The nucleus {sup 270}Hs with a closed proton and a closed neutron deformed shell, was predicted to be ''deformed doubly magic''. Nuclei around {sup 270}Hs can be produced only via fusion reactions at picobarn levels, resulting in a production rates of few atoms per day. Investigating short-lived nuclei using rapid chemical separation and subsequent on-line detection methods provides an independent and alternative means to electromagnetic on-line separators. Chemical separation of Hs in the form of HsO{sub 4} provides an excellent tool to study the formation reactions and nuclear structure in this region of the chart of nuclides due to a high overall efficiency and a very high purification factor. The goal was accomplished, as element 108, hassium, was produced in the reaction {sup 248}Cm({sup 26}Mg,xn){sup 274-x}Hs and chemically isolated. After gas phase separation of HsO{sub 4}, 26 genetically linked decay chains have been observed. These were attributed to decays of three different Hs isotopes produced in the 3-5n evaporation channels. The known decay chain of {sup 269}Hs, the 5n evaporation product, serves as an anchor point, thus allowing the unambiguous assignment of the observed decay chains to the 5n, 4n, and 3n channels, respectively. Decay properties of five nuclei have been unambiguously established for the first time, including the one for the the doubly-magic nuclide {sup 270}Hs. This hassium isotope is the next doubly magic nucleus after the well known {sup 208}Pb and the first experimentally observed even-even nucleus on the predicted N=162 neutron shell. The

  15. Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

    2016-03-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel

  16. National policy for control of radioactive sources and radioactive waste from non-power applications in Lithuania

    International Nuclear Information System (INIS)

    Klevinskas, G.; Mastauskas, A.

    2001-01-01

    procedures. The State Register of Sources of Ionizing Radiation is managed in local software, based on the FOX PRO database system. The software provides to print out various kinds of reports about the sources - couple of options are available to investigate the 'source's life'. The RAIS (Regulatory Authority Information System), version 2.0, provided by the International Atomic Energy Agency (IAEA) is now under examination and after necessary changes it will be translated into Lithuanian language and adopted to the local conditions. Improving the system, the database on spent sealed radioactive sources will be also included that will allow to have clear and objective information about the sources disused or sources sent for disposal. The principal users of sources of ionizing radiation in non-power applications in Lithuania can be split up into different categories, namely: industry, hospitals, research institutions and others (i.e. museums, libraries). Radioactive waste generated during the use of sources of ionizing radiation (excluding those generated in the nuclear fuel cycle) shall be managed according to the basic radioactive waste management principles and requirements set out in the Law on the Management of Radioactive Waste and in the Lithuanian Hygiene Standard HN 89:2001 'Management of Radioactive Waste', approved by the Minister of Health in 2001. There are requirements for the local waste management (at users' premises) established. Detailed requirements for the management of solid (including spent sealed sources), liquid, gaseous radioactive waste are established, basic requirements for the temporary radioactive waste management facilities, located at users' premises, are set out. There shall be three options for the management of radioactive waste generated during the licensed practice applied: waste below clearance levels shall be managed as ordinary waste or disposed of to environment; waste containing short lived radionuclides (with half-life less than 100

  17. Bioanalysis of underivatized amino acids in non-invasive exhaled breath condensate samples using liquid chromatography coupled with tandem mass spectrometry.

    Science.gov (United States)

    Konieczna, Lucyna; Pyszka, Magdalena; Okońska, Magdalena; Niedźwiecki, Maciej; Bączek, Tomasz

    2018-03-23

    chromatography with hydrophilic interaction with electrospray source coupled to tandem mass spectrometry (LC-HILIC-ESI-MS/MS) method's applicability for biomedical investigations, it was verified and applied to determine amino acids in pediatric patients with leukemia. These tests confirmed that glutamine, arginine, homoarginine, asparagine, histidine, methionine, proline, hydroxyproline, threonine, tyrosine, and valine were present in significantly higher levels in pediatric leukemia patients than in the healthy control group. The developed assay is an attractive alternative to standard analytical methods, because it allows for the non-invasive, fast, sensitive, and reliable analysis of amino acids without derivatization in EBC. Copyright © 2018 Elsevier B.V. All rights reserved.

  18. Development of an Accelerated Methodology to Study Degradation of Materials in Supercritical Water for Application in High Temperature Power Plants

    Science.gov (United States)

    Rodriguez, David

    The decreasing supply of fossil fuel sources, coupled with the increasing concentration of green house gases has placed enormous pressure to maximize the efficiency of power generation. Increasing the outlet temperature of these power plants will result in an increase in operating efficiency. By employing supercritical water as the coolant in thermal power plants (nuclear reactors and coal power plants), the plant efficiency can be increased to 50%, compared to traditional reactors which currently operate at 33%. The goal of this dissertation is to establish techniques to characterize the mechanical properties and corrosion behavior of materials exposed to supercritical water. Traditionally, these tests have been long term exposure tests spanning months. The specific goal of this dissertation is to develop a methodology for accelerated estimation of corrosion rates in supercritical water that can be sued as a screening tool to select materials for long term testing. In this study, traditional methods were used to understand the degradation of materials in supercritical water and establish a point of comparison to the first electrochemical studies performed in supercritical water. Materials studied included austenitic steels (stainless steel 304, stainless steel 316 and Nitronic 50) and nickel based alloys (Inconel 625 and 718). Surface chemistry of the oxide layer was characterized using scanning electron microscopy, X-ray diffraction, FT-IR, Raman and X-ray photoelectron spectroscopies. Stainless steel 304 was subjected to constant tensile load creep tests in water at a pressure of 27 MPa and at temperatures of 200 °C, 315 °C and supercritical water at 450 °C for 24 hours. It was determined that the creep rate for stainless steel 304 exposed to supercritical water would be unacceptable for use in service. It was observed that the formation of hematite was favored in subcritical temperatures, while magnetite was formed in the supercritical region. Corrosion of

  19. Development of Standardized Mobile Tracer Correlation Approach for Large Area Emission Measurements (DRAFT UNDER EPA REVIEW)

    Science.gov (United States)

    Foster-wittig, T. A.; Thoma, E.; Green, R.; Hater, G.; Swan, N.; Chanton, J.

    2013-12-01

    Improved understanding of air emissions from large area sources such as landfills, waste water ponds, open-source processing, and agricultural operations is a topic of increasing environmental importance. In many cases, the size of the area source, coupled with spatial-heterogeneity, make direct (on-site) emission assessment difficult; methane emissions, from landfills for example, can be particularly complex [Thoma et al, 2009]. Recently, whole-facility (remote) measurement approaches based on tracer correlation have been utilized [Scheutz et al, 2011]. The approach uses a mobile platform to simultaneously measure a metered-release of a conservative gas (the tracer) along with the target compound (methane in the case of landfills). The known-rate tracer release provides a measure of atmospheric dispersion at the downwind observing location allowing the area source emission to be determined by a ratio calculation [Green et al, 2010]. Although powerful in concept, the approach has been somewhat limited to research applications due to the complexities and cost of the high-sensitivity measurement equipment required to quantify the part-per billion levels of tracer and target gas at kilometer-scale distances. The advent of compact, robust, and easy to use near-infrared optical measurement systems (such as cavity ring down spectroscopy) allow the tracer correlation approach to be investigated for wider use. Over the last several years, Waste Management Inc., the U.S. EPA, and collaborators have conducted method evaluation activities to determine the viability of a standardized approach through execution of a large number of field measurement trials at U.S. landfills. As opposed to previous studies [Scheutz et al, 2011] conducted at night (optimal plume transport conditions), the current work evaluated realistic use-scenarios; these scenarios include execution by non-scientist personnel, daylight operation, and full range of atmospheric condition (all plume transport

  20. RSMASS system model development

    International Nuclear Information System (INIS)

    Marshall, A.C.; Gallup, D.R.

    1998-01-01

    1998. A radioisotope space power system model RISMASS is also under development. RISMASS will optimize and predict system masses for radioisotope power sources coupled with close-spaced thermionic diodes. Although RSMASS-D models have been developed for a broad variety of space nuclear power and propulsion systems, only a few concepts will be included in the releasable RSMASS-T computer code. A follow-on effort is recommended to incorporate all previous models as well as solar power system models into one general code. The proposed Space Power and propulsion system MASS (SPMASS) code would provide a consistent analysis tool for comparing a very broad range of alternative power and propulsion systems for any required power level and operating conditions. As for RSMASS-T the SPMASS model should be a certified, fully documented computer code available for general use. The proposed computer program would provide space mission planners with the capability to quickly and cost effectively explore power system options for any space mission. The code should be applicable for power requirements from as low as a few milliwatts (solar and isotopic system options) to many megawatts for reactor power and propulsion systems

  1. Recent Major Improvements to the ALS Sector 5 Macromolecular Crystallography Beamlines

    International Nuclear Information System (INIS)

    Morton, Simon A.; Glossinger, James; Smith-Baumann, Alexis; McKean, John P.; Trame, Christine; Dickert, Jeff; Rozales, Anthony; Dauz, Azer; Taylor, John; Zwart, Petrus; Duarte, Robert; Padmore, Howard; McDermott, Gerry; Adams, Paul

    2007-01-01

    Although the Advanced Light Source (ALS) was initially conceived primarily as a low energy (1.9GeV) 3rd generation source of VUV and soft x-ray radiation it was realized very early in the development of the facility that a multipole wiggler source coupled with high quality, (brightness preserving), optics would result in a beamline whose performance across the optimal energy range (5-15keV) for macromolecular crystallography (MX) would be comparable to, or even exceed, that of many existing crystallography beamlines at higher energy facilities. Hence, starting in 1996, a suite of three beamlines, branching off a single wiggler source, was constructed, which together formed the ALS Macromolecular Crystallography Facility. From the outset this facility was designed to cater equally to the needs of both academic and industrial users with a heavy emphasis placed on the development and introduction of high throughput crystallographic tools, techniques, and facilities--such as large area CCD detectors, robotic sample handling and automounting facilities, a service crystallography program, and a tightly integrated, centralized, and highly automated beamline control environment for users. This facility was immediately successful, with the primary Multiwavelength Anomalous Diffraction beamline (5.0.2) in particular rapidly becoming one of the foremost crystallographic facilities in the US--responsible for structures such as the 70S ribosome. This success in-turn triggered enormous growth of the ALS macromolecular crystallography community and spurred the development of five additional ALS MX beamlines all utilizing the newly developed superconducting bending magnets ('superbends') as sources. However in the years since the original Sector 5.0 beamlines were built the performance demands of macromolecular crystallography users have become ever more exacting; with growing emphasis placed on studying larger complexes, more difficult structures, weakly diffracting or smaller

  2. Bioremediation of soil contaminated with hydrocarbons using sewage sludge as an alternative source of nutrients; Biorremediacion de suelo contaminado con hidrocarburos empleando lodos residuales como fuente alterna de nutrientes

    Energy Technology Data Exchange (ETDEWEB)

    Martinez Prado, Adriana [Instituto Tecnologico de Durango, Durango, Durango (Mexico)]. E-mail: adriana.martinez@orst.edu; Perez Lopez, Ma. Elena [Centro Interdisciplinario de Investigacion para el Desarrollo Integral Regional (IPN-CIIDIR) Unidad Durango, Durango, Durango (Mexico); Pinto Espinoza, Joaquin; Gurrola Nevarez, Blanca Amelia; Osorio Rodriguez, Ana Lilia [Instituto Tecnologico de Durango, Durango, Durango (Mexico)

    2011-07-01

    In this research an aerobic bioremediation process, of a petroleum hydrocarbon contaminated soil, was evaluated using residual sludge (biosolids) from a local domestic wastewater treatment plant, as an alternative micro and macro nutrient source. Contamination of the soil resulted from accidental spills with hydrocarbons, mainly diesel, gasoline, and residual oils, from the San Antonio mining unit which belongs to Goldcorp Mexico Company, located in Tayoltita, from the municipality of San Dimas, Durango. Laboratory and pilot experiments were conducted, adjusting soil water content to field capacity and carbon:nitrogen (C:N) ratio to 10:1, evaluating the effect of addition of nutrients, density of the material being remediated, and the influence of soil particle size in the remediation process. It was demonstrated that the biosolids stimulated the native microorganisms of the polluted soil; consequently the hydrocarbon degradation process was accelerated. The hydrocarbons were used as carbon and electron donor source, coupling the oxidation-reduction reaction with oxygen which served as the electron acceptor. Treated soil was remediated and reached the maximum permissible limit (MPL), established in the Mexican current regulations (NOM-138-SEMARNAT/SS-2003), at both stages, and it is recommended as an optional process to the mining company to fulfill with the Clean Industry Program. [Spanish] En la presente investigacion se evaluo el proceso de biorremediacion aerobica de un suelo contaminado con hidrocarburos de petroleo empleando lodos residuales (biosolidos), provenientes de una planta de tratamiento de aguas residuales (PTAR) domesticas de la localidad, como fuente alterna de macro y micronutrientes. La contaminacion del suelo fue resultado de derrames accidentales de diesel, aceite y grasas en la unidad minera San Antonio perteneciente al grupo Goldcorp Mexico, ubicada en el municipio de San Dimas, en Tayoltita, Durango. Se realizaron experimentos a escala

  3. Characterization of Leucaena (Leucaena leucephala) oil by direct analysis in real time (DART) ion source and gas chromatography; Caracterización del aceite de Leucaena (Leucaena leucocephala) por análisis directo en tiempo real (DART) y cromatografía de gases

    Energy Technology Data Exchange (ETDEWEB)

    Alam, M.; Alandis, N.M.; Sharmin, E.; Ahmad, N.; Alrayes, B.F.; Ali, D.

    2017-07-01

    For the first time, we report the characterization of triacylglycerols and fatty acids in Leucaena (Leucaena leucephala) oil [LUCO], an unexplored nontraditional non-medicinal plant belonging to the family Fabaceae. LUCO was converted to fatty acid methyl esters (FAMEs). We analyzed the triacylglycerols (TAGs) of pure LUCO and their FAMEs by time-of-flight mass spectrometry (TOF-MS) followed by multivariate analysis for discrimination among the FAMEs. Our investigations for the analysis of LUCO samples represent noble features of glycerides. A new type of ion source, coupled with high-resolution TOF-MS was applied for the comprehensive analysis of triacylglycerols. The composition of fatty acid based LUCO oil was studied using Gas Chromatography (GC-FID). The major fatty acid components of LUCO oil are linoleic acid (52.08%) oleic acid (21.26%), palmitic acid (7.91%) and stearic acid (6.01%). A metal analysis in LUCO was done by Inductively Coupled Plasma Mass Spectrometry (ICP-MS). The structural elucidation and thermal stability of LUCO were studied by FT-IR, 1H NMR, 13C NMR spectroscopic techniques and TGA-DSC, respectively. We also measured the cytotoxicity of LUCO [Spanish] Se presenta por primera vez la caracterización de triacilgliceroles y ácidos grasos del aceite de Leucaena (Leucaena leucephala) [LUCO], una planta no medicinal, no tradicional y no explorada, perteneciente a la familia Fabaceae. Se analizaron triacilgliceroles (TAGs) de LUCO y sus FAMEs por espectrometría de masas de tiempo de vuelo (TOF-MS) seguido de análisis multivariante para discriminación entre los FAME. Nuestras investigaciones para el análisis de muestras de LUCO presentaron características propias de los glicéridos. Un nuevo tipo de fuente de iones, junto con alta resolución TOF-MS se aplicó para el análisis exhaustivo de triacilgliceroles. La composición de aceite de LUCO basado en ácidos grasos se estudió usando Cromatografía de Gas (GC-FID). Los principales

  4. Baryon-Baryon Interactions ---Nijmegen Extended-Soft-Core Models---

    Science.gov (United States)

    Rijken, T. A.; Nagels, M. M.; Yamamoto, Y.

    pseudo-scalar-, vector-, scalar-, and axial-mesons, (ii) diffractive (i.e. multiple-gluon) exchanges, (iii) two pseudo-scalar exchange (PS-PS), and (iv) meson-pair-exchange (MPE). The OBE- and pair-vertices are regulated by gaussian form factors producing potentials with a soft behavior near the origin. The assignment of the cutoff masses for the BBM-vertices is dependent on the SU(3)-classification of the exchanged mesons for OBE, and a similar scheme for MPE. The ESC-models ESC04 and ESC08 describe the nucleon-nucleon (NN), hyperon-nucleon (YN), and hyperon-hyperon (YY) interactions in a unified way using broken SU(3)-symmetry. Novel ingredients in the OBE-sector in the ESC-models are the inclusion of (i) the axial-vector meson potentials, (ii) a zero in the scalar- and axial-vector meson form factors. These innovations made it possible for the first time to keep the meson coupling parameters of the model qualitatively in accordance with the predictions of the (3P_0) quark-antiquark creation (QPC) model. This is also the case for the F/(F+D)-ratios. Furthermore, the introduction of the zero helped to avoid the occurrence of unwanted bound states in Lambda N. Broken SU(3)-symmetry serves to connect the NN and the YN channels, which leaves after fitting NN only a few free parameters for the determination of the YN-interactions. In particular, the meson-baryon coupling constants are calculated via SU(3) using the coupling constants of the NN oplus YN-analysis as input. In ESC04 medium strong flavor-symmetry-breaking (FSB) of the coupling constants was investigated, using the (3}P_{0) -model with a Gell-Mann-Okubo hypercharge breaking for the BBM-coupling. In ESC08 the couplings are kept SU(3)-symmetric. The charge-symmetry-breaking (CSB) in the Lambda p and Lambda n channels, which is an SU(2) isospin breaking, is included in the OBE-, TME-, and MPE-potentials. In ESC04 and ESC08 simultaneous fits to the NN- and the YN- scattering data have been achieved, using different

  5. Germanium CMOS potential from material and process perspectives: Be more positive about germanium

    Science.gov (United States)

    Toriumi, Akira; Nishimura, Tomonori

    2018-01-01

    practically viable, we need to understand why electron mobility is severely degraded in the inversion layer in Ge n-channel MOSFETs and to find out how it can be increased. In the Si CMOS technology, the SiO2/Si interface has long been investigated and cannot be ignored even after the introduction of high-k gate stack technology. In that sense, the GeO2/Ge interface should be intensively studied to make the best of Ge’s advantages. Therefore we first discuss the GeO2/Ge interface with regard to its physical and electrical characteristics. When we regard Ge as a channel material beyond Si for high performance ULSIs, we also have to seriously consider the gate stack scalability and reliability. The source/drain engineering, as well as the gate stack formation, is another challenge in Ge MOSFET design. Both the higher metal/Ge contact resistance and the larger p/n junction leakage current may be the consequences of Ge’s intrinsic properties because they are derived from the strong Fermi-level pinning and the narrow energy band gap, respectively. Even if the carrier transport in the channel may be ideally ballistic, these properties should degrade FET properties. The narrower energy band gap of Ge is often addressed, but the higher dielectric constant of Ge is rarely discussed. This is also the case for most of the other high-mobility materials. The dielectric constant is directly and negatively related to short-channel effects, and we have not been able to provide a substantial solution to overcome this hardship. We have to keep this in mind for the short-channel FET operation. Although a number of problems remain to be solved, in this paper, we view the current status of Ge FET technology positively. A number of (but not all) Ge-related challenges have been overcome in the past 10 years, which seems to be a good time to summarize the status of Ge technology, particularly materials engineering aspects rather than device integration issues. Since we cannot cover all of the

  6. Charge transport models for reliability engineering of semiconductor devices

    International Nuclear Information System (INIS)

    Bina, M.

    2014-01-01

    The simulation of semiconductor devices is important for the assessment of device lifetimes before production. In this context, this work investigates the influence of the charge carrier transport model on the accuracy of bias temperature instability and hot-carrier degradation models in MOS devices. For this purpose, a four-state defect model based on a non-radiative multi phonon (NMP) theory is implemented to study the bias temperature instability. However, the doping concentrations typically used in nano-scale devices correspond to only a small number of dopants in the channel, leading to fluctuations of the electrostatic potential. Thus, the granularity of the doping cannot be ignored in these devices. To study the bias temperature instability in the presence of fluctuations of the electrostatic potential, the advanced drift diffusion device simulator Minimos-NT is employed. In a first effort to understand the bias temperature instability in p-channel MOSFETs at elevated temperatures, data from direct-current-current-voltage measurements is successfully reproduced using a four-state defect model. Differences between the four-state defect model and the commonly employed trapping model from Shockley, Read and Hall (SRH) have been investigated showing that the SRH model is incapable of reproducing the measurement data. This is in good agreement with the literature, where it has been extensively shown that a model based on SRH theory cannot reproduce the characteristic time constants found in BTI recovery traces. Upon inspection of recorded recovery traces after bias temperature stress in n-channel MOSFETs it is found that the gate current is strongly correlated with the drain current (recovery trace). Using a random discrete dopant model and non-equilibrium greens functions it is shown that direct tunnelling cannot explain the magnitude of the gate current reduction. Instead it is found that trap-assisted tunnelling, modelled using NMP theory, is the cause of this

  7. Interpretation and Regulation of Electronic Defects in IGZO TFTs Through Materials & Processes

    Science.gov (United States)

    Mudgal, Tarun

    these contributions in the interpretation and regulation of electronic defect states in IGZO TFTs is presented, along with the support of device characteristics that are among the best reported in the literature. Additional material on a complementary technology which utilizes flash-lamp annealing of amorphous silicon will also be described. Flash-Lamp Annealed Polycrystalline Silicon (FLAPS) has realized n-channel and p-channel TFTs with promising results, and may provide an option for future applications with the highest performance demands. IGZO is rapidly emerging as the candidate to replace a-Si:H and address the performance needs of display products produced by large panel manufacturing.

  8. Glacier surge mechanism based on linked cavity configuration of the basal water conduit system

    Science.gov (United States)

    Kamb, Barclay

    1987-08-01

    Based on observations of the 1982-1983 surge of Variegated Glacier, Alaska, a model of the surge mechanism is developed in terms of a transition from the normal tunnel configuration of the basal water conduit system to a linked cavity configuration that tends to restrict the flow of water, resulting in increased basal water pressures that cause rapid basal sliding. The linked cavity system consists of basal cavities formed by ice-bedrock separation (cavitation), ˜1 m high and ˜10 m in horizontal dimensions, widely scattered over the glacier bed, and hydraulically linked by narrow connections where separation is minimal (separation gap ≲ 0.1 m). The narrow connections, called orifices, control the water flow through the conduit system; by throttling the flow through the large cavities, the orifices keep the water flux transmitted by the basal water system at normal levels even though the total cavity cross-sectional area (˜200 m2) is much larger than that of a tunnel system (˜10 m2). A physical model of the linked cavity system is formulated in terms of the dimensions of the "typical" cavity and orifice and the numbers of these across the glacier width. The model concentrates on the detailed configuration of the typical orifice and its response to basal water pressure and basal sliding, which determines the water flux carried by the system under given conditions. Configurations are worked out for two idealized orifice types, step orifices that form in the lee of downglacier-facing bedrock steps, and wave orifices that form on the lee slopes of quasisinusoidal bedrock waves and are similar to transverse "N channels." The orifice configurations are obtained from the results of solutions of the basal-sliding-with-separation problem for an ice mass constituting of linear half-space of linear rheology, with nonlinearity introduced by making the viscosity stress-dependent on an intuitive basis. Modification of the orifice shapes by melting of the ice roof due to