p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

Science.gov (United States)

Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

2015-08-05

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

Energy Technology Data Exchange (ETDEWEB)

Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

2015-08-31

This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

2016-08-15

Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Energy Technology Data Exchange (ETDEWEB)

Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-01

Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

A solution process for inverted tandem solar cells

DEFF Research Database (Denmark)

Larsen-Olsen, Thue Trofod; Bundgaard, Eva; Sylvester-Hvid, Kristian O.

2011-01-01

Tandem solar cells with normal and inverted device geometries were prepared by a solution process. Both device types were based on the use of zinc(II)oxide as the electron transporting layer (ETL). The hole transporting layer (HTL) was either PEDOT:PSS for normal geometry tandem solar cells...... or vanadium(V)oxide in the case of inverted tandem cells. It was found that the inverted tandem solar cells performed comparable or better than the normal geometry devices, showing that the connection structure of vanadium(V)oxide, Ag nanoparticles and zinc(II)oxide functions both as a good recombination...... layer, ensuring serial connection, and as a solvent barrier, protecting the first photoactive layer from processing of the second layer. This successfully demonstrates a tandem solar cell fabrication process fully compatible with state-of-the-art solution based automated production procedures....

The cathodic reduction of dioxygen on uranium oxide in dilute alkaline aqueous solution

International Nuclear Information System (INIS)

Hocking, W.H.; Betteridge, J.S.; Shoesmith, D.W.

1991-09-01

The cathodic reduction of dioxygen on uranium oxide in dilute alkaline aqueous solutions has been investigated within the context of a program to develop a comprehensive model to predict the behaviour of used CANDU (Canada Deuterium Uranium) nuclear fuel under disposal-vault conditions. Two different kinds of ceramic UO 2 were studied: reactor-grade CANDU fuel with normal p-type electrical conductivity and low-resistance material that exhibits n-type photoelectrochemical behaviour. The transport of electroactive species in solution was controlled by varying the rotation rate of rotating disc electrodes (RDE) and rotating ring-disc electrodes (RRDE). Steady-state polarization measurements were made using the current-interrupt method to compensate for the potential drop caused by ohmic resistance. Any release of peroxide to solution from the UO 2 (disc) surface could be monitored by oxidizing it at the Au ring of an RRDE. The existing theory for the cathodic 0 2 -reduction process as applied to RDE and RRDE experiments has been reviewed as a starting point for the interpretation of the results obtained in our work. (37 figs., 2 tabs., 170 refs.)

Efficient polymer:fullerene bulk heterojunction solar cells with n-type doped titanium oxide as an electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Choi, Youna [Heeger Center for Advanced Material & Research Institute of Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Geunjin [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Heejoo, E-mail: heejook@gist.ac.kr [Heeger Center for Advanced Material & Research Institute of Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Sun Hee [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Kwanghee, E-mail: klee@gist.ac.kr [Heeger Center for Advanced Material & Research Institute of Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2015-05-29

We have reported a highly n-type doped solution-processed titanium metal oxide (TiO{sub x}) for use as an efficient electron-transport layer (ETL) in polymer:fullerene bulk heterojunction (BHJ) solar cells. When the metal ions (Ti) in TiO{sub x} are partially substituted by niobium (Nb), the charge carrier density increased, by an order of magnitude, because of the large electronegativity of Nb compared to that of Ti. Therefore, the work function (WF) of Nb-doped metal oxide (Nb-TiO{sub x}) decreases from 4.75 eV (TiO{sub x}) to 4.66 eV (Nb-TiO{sub x}), leading to an enhancement in the power conversion efficiency (PCE) of BHJ solar cells with a Nb-TiO{sub x} ETL (from 7.99% to 8.40%). - Highlights: • Solution processable Nb-doped TiO{sub x} was developed by simple sol-gel synthesis. • Charge carrier density in TiO{sub x} is significantly increased by introducing Nb element. • The work function value of Nb-doped TiO{sub x} is reduced by introducing Nb element. • A charge recombination inside of PSC with Nb-TiO{sub x} was effectively suppressed.

Enhancing the Photovoltage of Ni/ n-Si Photoanode for Water Oxidation through a Rapid Thermal Process.

Science.gov (United States)

Li, Shengyang; She, Guangwei; Chen, Cheng; Zhang, Shaoyang; Mu, Lixuan; Guo, Xiangxin; Shi, Wensheng

2018-03-14

The Ni in the Ni/ n-Si photoanode can not only protect Si from corrosion, but also catalyze the water oxidation reaction. However, the high density of interface states at the Ni/ n-Si interface could pin the Fermi level of silicon, which will lower the Schottky barrier height of the Ni/ n-Si. As a result, a low photovoltage and consequent high onset potential of Ni/ n-Si photoanode for water oxidation were generated. In this study, the interfacial states of the Ni/ n-Si photoanodes were efficiently diminished through a rapid thermal process (RTP). Calculated from the Mott-Schottky plots, the Schottky barrier height of Ni/ n-Si was increased from 0.58 to 0.78 eV after RTP. Under the illumination of 100 mW cm -2 of the Xe lamp, the onset potential of the Ni/ n-Si photoanode for water oxidation was negatively shifted for 150 mV after RTP. Besides, the RTP-treated Ni/ n-Si photoanode exhibited a high stability during the PEC water oxidation of 8 h in 1 M KOH solution.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Science.gov (United States)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

A corrosion-protective coating based on a solution-processable polymer-grafted graphene oxide nanocomposite

International Nuclear Information System (INIS)

Qi, Kai; Sun, Yimin; Duan, Hongwei; Guo, Xingpeng

2015-01-01

Highlights: • Solution-processable polymer-grafted graphene nanocomposite is synthesized. • The nanocomposite exhibits synergistic properties of both building blocks. • The nanocomposite can be easily applied to form a protective coating on metals. • The coating can effectively prevent corrosion of copper substrate. - Abstract: A new type of solution-processable graphene coating has been synthesized by grafting polymethylmethacrylate (PMMA) brushes on graphene oxide (GO) via surface-initiated atom transfer radical polymerization (ATRP). One major finding is that the PMMA-grafted GO nanocomposite exhibits synergistic properties of both building blocks, i.e., permeation inhibition of GO and solubility of PMMA in a variety of solvents, which makes it compatible with commonly used coating methods to form uniform coatings with controlled thickness. Our results demonstrate that PMMA-grafted GO coating can effectively block charge transfer at the metal–electrolyte interface and prevent corrosion of the copper substrate under aggressive saline conditions

Low-temperature solution-processed zinc oxide field effect transistor by blending zinc hydroxide and zinc oxide nanoparticle in aqueous solutions

Science.gov (United States)

Shin, Hyeonwoo; Kang, Chan-mo; Baek, Kyu-Ha; Kim, Jun Young; Do, Lee-Mi; Lee, Changhee

2018-05-01

We present a novel methods of fabricating low-temperature (180 °C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH)2] and zinc oxide hydrate (ZnO • H2O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (μ), on/off current ratio (I on/I off), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was systematically compared with previously proposed methods. An atomic forced microscopic (AFM) image and an X-ray photoelectron spectroscopy (XPS) analysis showed that our method increases the ZnO crystallite size with less OH‑ impurities. Thus, we attribute the improved electrical performance to the better ZnO film formation using the blending methods.

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

International Nuclear Information System (INIS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-01-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

Science.gov (United States)

Yu, Byoung-Soo; Ha, Tae-Jun

2018-04-01

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors

International Nuclear Information System (INIS)

Park, Sung Kyu; Kim, Yong-Hoon; Han, Jeong-In

2009-01-01

We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 μm typically showed a mobility range 0.05-0.2 cm 2 V -1 s -1 with an on/off ratio of more than 10 6 .

Enzymatic hydrolysis of cellulose dissolved in N-methyl morpholine oxide/water solutions.

Science.gov (United States)

Ramakrishnan, S; Collier, J; Oyetunji, R; Stutts, B; Burnett, R

2010-07-01

In situ hydrolysis of cellulose (dissolving pulp) in N-methyl morpholine oxide (NMMO) solutions by commercially available Accellerase1000 is carried out. The yield of reducing sugars is followed as a function of time at three different temperatures and four different enzyme loadings to study the effect of system parameters on enzymatic hydrolysis. Initial results show that rates of hydrolysis of cellulose and yields of reducing sugars in the presence of NMMO-water is superior initially (ratio of initial reaction rates approximately 4) and comparable to that of regenerated cellulose (for times greater than 5h) when suspended in aqueous solutions. The usage of Accellerase1000 results predominantly in the formation of glucose with minimal amounts of cellobiose. This study proves the ability of cellulases to remain active in NMMO to carry out an in situ saccharification of cellulose thus eliminating the need to recover regenerated cellulose. Thus this work will form the basis for developing a continuous process for conversion of biomass to hydrogen, ethanol and other hydrocarbons. Copyright 2009 Elsevier Ltd. All rights reserved.

Decolorization and mineralization of Allura Red AC aqueous solutions by electrochemical advanced oxidation processes

International Nuclear Information System (INIS)

Thiam, Abdoulaye; Sirés, Ignasi; Garrido, José A.; Rodríguez, Rosa M.; Brillas, Enric

2015-01-01

Highlights: • Quicker degradation of Allura Red AC in the order EO-H 2 O 2 < EF < PEF with Pt or BDD anode. • Almost total mineralization achieved by the most powerful PEF process with BDD. • Similar decolorization and mineralization rate in SO 4 2− , ClO 4 − and NO 3 − media. • In Cl − medium, only slightly larger decolorization rate but strong inhibition of mineralization. • Identification of aromatic products, carboxylic acids and released NH 4 + , NO 3 − and SO 4 2− ions. - Abstract: The decolorization and mineralization of solutions containing 230 mg L −1 of the food azo dye Allura Red AC at pH 3.0 have been studied upon treatment by electrochemical oxidation with electrogenerated H 2 O 2 (EO-H 2 O 2 ), electro-Fenton (EF) and photoelectro-Fenton (PEF). Experiments were performed with a stirred tank reactor containing a boron-doped diamond (BDD) or Pt anode and an air-diffusion cathode to generate H 2 O 2 . The main oxidants were hydroxyl radicals formed at the anode surface from water oxidation and in the bulk from Fenton’s reaction between H 2 O 2 and added Fe 2+ . The oxidation ability increased in the sequence EO-H 2 O 2 < EF < PEF and faster degradation was always obtained using BDD. PEF process with BDD yielded almost total mineralization following similar trends in SO 4 2− , ClO 4 − and NO 3 − media, whereas in Cl − medium, mineralization was inhibited by the formation of recalcitrant chloroderivatives. GC–MS analysis confirmed the cleavage of the −N=N− bond with formation of two main aromatics in SO 4 2− medium and three chloroaromatics in Cl − solutions. The effective oxidation of final oxalic and oxamic acids by BDD along with the photolysis of Fe(III)-oxalate species by UVA light accounted for the superiority of PEF with BDD. NH 4 + , NO 3 − and SO 4 2− ions were released during the mineralization

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

Science.gov (United States)

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

International Nuclear Information System (INIS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Development and Processing of p-type Oxide Thermoelectric Materials

DEFF Research Database (Denmark)

Wu, NingYu; Van Nong, Ngo

The main aim of this research is to investigate and develop well-performing p-type thermoelectric oxide materials that are sufficiently stable at high temperatures for power generating applications involving industrial processes. Presently, the challenges facing the widespread implementation...

Integrative device and process of oxidization, degassing, acidity adjustment of 1BP from APOR process

Energy Technology Data Exchange (ETDEWEB)

Zuo, Chen; Zheng, Weifang, E-mail: wfazh@ciae.ac.cn; Yan, Taihong; He, Hui; Li, Gaoliang; Chang, Shangwen; Li, Chuanbo; Yuan, Zhongwei

2016-02-15

Graphical abstract: Previous (left) and present (right) device of oxidation, degassing, acidity adjustment of 1BP. - Highlights: • We designed an integrative device and process. • The utilization efficiency of N{sub 2}O{sub 4} is increased significantly. • Our work results in considerable simplification of the device. • Process parameters are determined by experiments. - Abstract: Device and process of oxidization, degassing, acidity adjustment of 1BP (The Pu production feed from U/Pu separation section) from APOR process (Advanced Purex Process based on Organic Reductants) were improved through rational design and experiments. The device was simplified and the process parameters, such as feed position and flow ratio, were determined by experiments. Based on this new device and process, the reductants N,N-dimethylhydroxylamine (DMHAN) and methylhydrazine (MMH) in 1BP solution could be oxidized with much less N{sub 2}O{sub 4} consumption.

EFFECT OF CURRENT, TIME, FEED AND CATHODE TYPE ON ELECTROPLATING PROCESS OF URANIUM SOLUTION

Directory of Open Access Journals (Sweden)

Sigit Sigit

2017-02-01

Full Text Available ABSTRACT   EFFECT OF CURRENT, TIME, FEED AND CATHODE TYPE ON ELECTROPLATING PROCESS OF URANIUM SOLUTION. Electroplating process of uranyl nitrate and effluent process has been carried out in order to collect uranium contained therein using electrode Pt / Pt and Pt / SS at various currents and times. Material used for electrode were Pt (platinum and SS (Stainlees Steel. Feed solution of 250 mL was entered into a beaker glass equipped with Pt anode - Pt cathode or Pt anode - SS cathode, then fogged direct current from DC power supply with specific current and time so that precipitation of uranium sticking to the cathode. After the processes completed, the cathode was removed and weighed to determine weight of precipitates, while the solution was analyzed to determine the uranium concentration decreasing after and before electroplating process. The experiments showed that a relatively good time to acquire uranium deposits at the cathode was 1 hour by current 7 ampere, uranyl nitrate as feed, and Pt (platinum as cathode. In these conditions, uranium deposits attached to the cathode amounted to 74.96% of the original weight of uranium oxide in the feed or 206.5 mg weight. The use of Pt cathode for  uranyl nitrate, SS and Pt cathode for effluent process feed gave uranium specific weight at the cathode of 12.99 mg/cm2, 2.4 mg/cm2 and 5.37 mg/cm2 respectively for current 7 ampere and electroplating time 1 hour. Keywords: Electroplating, uranyl nitrate, effluent process, Pt/Pt electrode, Pt/SS electrode

Synthesis of p-type nickel oxide nanosheets on n-type titanium dioxide nanorod arrays for p-n heterojunction-based UV photosensor

Science.gov (United States)

Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

2018-05-01

Titanium dioxide (TiO2) nanorod arrays (TNAs) were synthesized and deposited on fluorine tin oxide (FTO)-coated glass substrate using a novel and facile immersion method in a glass container. The synthesis and deposition of p-type nickel oxide (NiO) nanosheets (NS) on the n-type TNAs was investigated in the p-n heterojunction photodiode (PD) for the application of ultraviolet (UV) photosensor. The fabricated TNAs/NiO NS based UV photosensor exhibited a highly increased photocurrent of 4.3 µA under UV radiation (365 nm, 750 µW/cm2) at 1.0 V reverse bias. In this study, the fabricated TNAs/NiO NS p-n heterojunction based photodiode showed potential applications for UV photosensor based on the stable photo-generated current attained under UV radiation.

Transparent heaters based on solution-processed indium tin oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Im, Kiju [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Cho, Kyoungah [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Kim, Jonghyun [Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Kim, Sangsig, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)

2010-05-03

We demonstrate transparent heaters constructed on glass substrates using solution-processed indium tin oxide (ITO) nanoparticles (NPs) and their heating capability. The heat-generating characteristics of the heaters depended significantly on the sintering temperature at which the ITO NPs deposited on a glass substrate by spin-coating were transformed thermally into a solid film. The steady-state temperature of the ITO NP film sintered at 400 {sup o}C was 163 {sup o}C at a bias voltage of 20 V, and the defrosting capability of the film was confirmed by using dry-ice.

Sonolytic Oxidation of Tc(IVO2nH2O Nanoparticles to Tc(VIIO4 in Aqueous Solution

Directory of Open Access Journals (Sweden)

M. Zakir

2010-04-01

Full Text Available Sonolysis of a hydrosol of TcO2nH2O was investigated in the Ar- or He- atmosphere. Colloidal TcO2nH2O nanoparticles were irradiated with a 200 kHz and 1.25 W/cm2 ultrasound. It was found that the TcO2nH2O colloids dispersed in an aqueous solution (under Ar or He atmosphere was completely dissolved by ultrasonic irradiation (200 kHz, 200 W. The original brownish black color of the suspension slowly disappeared leaving behind a colorless solution. This change suggests that oxidation of Tc(IV to Tc(VII takes place. The oxidation was almost complete during 30 minutes sonication time under argon atmosphere for initial concentration of 6.0E-5 M. Addition of t-butyl alcohol, an effective radical scavenger which readily reacts with OH radicals, supressed the dissolution of TcO2nH2O colloids. This reaction indicates that TcO2nH2O molecules are oxidized by OH radicals produced in cavitation bubbles.

High performance printed oxide field-effect transistors processed using photonic curing

Science.gov (United States)

Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-01

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

Metachelins, mannosylated and N-oxidized coprogen-type siderophores from Metarhizium robertsii

Science.gov (United States)

Under iron-depleted culture conditions, the entomopathogenic fungus Metarhizium robertsii (Bischoff, Humber, and Rehner) (= M. anisopliae) produces a complex of extracellular siderophores including novel O-glycosylated and/or N-oxidized coprogen-type compounds as well as the known fungal siderophore...

Room-temperature solution-processed and metal oxide-free nano-composite for the flexible transparent bottom electrode of perovskite solar cells

Science.gov (United States)

Lu, Haifei; Sun, Jingsong; Zhang, Hong; Lu, Shunmian; Choy, Wallace C. H.

2016-03-01

The exploration of low-temperature and solution-processed charge transporting and collecting layers can promote the development of low-cost and large-scale perovskite solar cells (PVSCs) through an all solution process. Here, we propose a room-temperature solution-processed and metal oxide-free nano-composite composed of a silver nano-network and graphene oxide (GO) flawless film for the transparent bottom electrode of a PVSC. Our experimental results show that the amount of GO flakes play a critical role in forming the flawless anti-corrosive barrier in the silver nano-network through a self-assembly approach under ambient atmosphere, which can effectively prevent the penetration of liquid or gaseous halides and their corrosion against the silver nano-network underneath. Importantly, we simultaneously achieve good work function alignment and surface wetting properties for a practical bottom electrode by controlling the degree of reduction of GO flakes. Finally, flexible PVSC adopting the room-temperature and solution-processed nano-composite as the flexible transparent bottom electrode has been demonstrated on a polyethylene terephthalate (PET) substrate. As a consequence, the demonstration of our room-temperature solution-processed and metal oxide-free flexible transparent bottom electrode will contribute to the emerging large-area flexible PVSC technologies.The exploration of low-temperature and solution-processed charge transporting and collecting layers can promote the development of low-cost and large-scale perovskite solar cells (PVSCs) through an all solution process. Here, we propose a room-temperature solution-processed and metal oxide-free nano-composite composed of a silver nano-network and graphene oxide (GO) flawless film for the transparent bottom electrode of a PVSC. Our experimental results show that the amount of GO flakes play a critical role in forming the flawless anti-corrosive barrier in the silver nano-network through a self

All-solution processed polymer light-emitting diodes with air stable metal-oxide electrodes

NARCIS (Netherlands)

Bruyn, P. de; Moet, D.J.D.; Blom, P.W.M.

2012-01-01

We present an all-solution processed polymer light-emitting diode (PLED) using spincoated zinc oxide (ZnO) and vanadium pentoxide (V2O5) as electron and hole injecting contact, respectively. We compare the performance of these devices to the standard PLED design using PEDOT:PSS as anode and Ba/Al as

Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

Directory of Open Access Journals (Sweden)

Korbutowicz R.

2016-03-01

Full Text Available Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN layers grown on silicon Si(1 1 1 were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS and Spectroscopic Ellipsometry (SE. Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a dry oxidation with oxygen, (b wet oxidation with water steam and (c mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

International Nuclear Information System (INIS)

Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

2005-01-01

We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

Synthesis of visible-light responsive graphene oxide/TiO(2) composites with p/n heterojunction.

Science.gov (United States)

Chen, Chao; Cai, Weimin; Long, Mingce; Zhou, Baoxue; Wu, Yahui; Wu, Deyong; Feng, Yujie

2010-11-23

Graphene oxide/TiO(2) composites were prepared by using TiCl(3) and graphene oxide as reactants. The concentration of graphene oxide in starting solution played an important role in photoelectronic and photocatalytic performance of graphene oxide/TiO(2) composites. Either a p-type or n-type semiconductor was formed by graphene oxide in graphene oxide/TiO(2) composites. These semiconductors could be excited by visible light with wavelengths longer than 510 nm and acted as sensitizer in graphene oxide/TiO(2) composites. Visible-light driven photocatalytic performance of graphene oxide/TiO(2) composites in degradation of methyl orange was also studied. Crystalline quality and chemical states of carbon elements from graphene oxide in graphene oxide/TiO(2) composites depended on the concentration of graphene oxide in the starting solution. This study shows a possible way to fabricate graphene oxide/semiconductor composites with different properties by using a tunable semiconductor conductivity type of graphene oxide.

n-Type Azaacenes Containing B←N Units.

Science.gov (United States)

Min, Yang; Dou, Chuandong; Tian, Hongkun; Geng, Yanhou; Liu, Jun; Wang, Lixiang

2018-02-12

We disclose a novel strategy to design n-type acenes through the introduction of boron-nitrogen coordination bonds (B←N). We synthesized two azaacenes composed of two B←N units and six/eight linearly annelated rings. The B←N unit significantly perturbed the electronic structures of the azaacenes: Unique LUMOs delocalized over the entire acene skeletons and decreased aromaticity of the B←N-adjacent rings. Most importantly, these B←N-containing azaacenes exhibited low-lying LUMO energy levels and high electron affinities, thus leading to n-type character. The solution-processed organic field-effect transistor based on one such azaacene exhibited unipolar n-type characteristics with an electron mobility of 0.21 cm 2  V -1  s -1 . © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis of (Cr,V){sub 2}(C,N) solid solution powders by thermal processing precursors

Energy Technology Data Exchange (ETDEWEB)

Liu, Anrui [School of Materials Science & Engineering, Sichuan University, Chengdu, 610065 (China); Liu, Ying [School of Materials Science & Engineering, Sichuan University, Chengdu, 610065 (China); Key Laboratory of Advanced Special Material & Technology, Ministry of Education, Chengdu, 610065 (China); Ma, Shiqing; Qiu, Yuchong; Rong, Pengcheng; Ye, Jinwen [School of Materials Science & Engineering, Sichuan University, Chengdu, 610065 (China)

2017-06-01

The single-phase (Cr,V){sub 2}(C,N) solid solution powders were fabricated via carbothermal reduction-nitridation (CRN) processing technique. The effects of heat treatment temperature, nitrogen pressure and carbon proportion were experimentally studied in detail by X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and thermal analysis. The chemical transformations of vanadium and chromium compounds were as follows: precursors → V{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} → Cr{sub 3}C{sub 2}, Cr{sub 2}O{sub 3}, (Cr,V){sub 2}(C,N) → (Cr,V){sub 2}(C,N). When the heat-treated temperature was below 1200 °C, chromium oxides didn’t completely react. However, higher temperature ∼1300 °C could not only lead to the segregation of some nitrides and carbon black, but also to the occurrence of fiber-bridged particles. The system nitrogen pressure over 0.03 MPa would cause a subtle transformation of (Cr,V){sub 2}(C,N) to VCrN{sub 2}. When the carbon proportion was below 15 wt%, the oxides could not be completely reduced, while when the carbon proportion was above 15.5 wt%, some undesired carbides, like Cr{sub 23}C{sub 6} and Cr{sub 3}C{sub 2}, would form. Ultimately, the homogeneously distributed pure-phase (Cr,V){sub 2}(C,N) spherical particles with the average size of ∼1.5 μm were obtained at the optimal conditions of the treatment of precursors at 1200 °C for 1 h with the nitrogen pressure of 0.03 MPa and carbon content of 15.5 wt%. The chemical composition of the solid solution with the optimal process could be drawn as (Cr{sub 0.85}V{sub 0.15}){sub 2}(C{sub 0.57}N{sub 0.43}). Thermal processing precursors method shows the advantages of lower synthesis temperature, shorter period and finer particles when comparing with the conventional preparations. - Highlights: • Single phase of (Cr,V){sub 2}(C,N) powders were synthesized for the first time. • Precursors were used to prepared the powders by carbothermal

Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide

KAUST Repository

Baker, L. Robert

2011-08-18

The role of the oxide-metal interface in determining the activity and selectivity of chemical reactions catalyzed by metal particles on an oxide support is an important topic in science and industry. A proposed mechanism for this strong metal-support interaction is electronic activation of surface adsorbates by charge carriers. Motivated by the goal of using electronic activation to drive nonthermal chemistry, we investigated the ability of the oxide support to mediate charge transfer. We report an approximately 2-fold increase in the turnover rate of catalytic carbon monoxide oxidation on platinum nanoparticles supported on stoichiometric titanium dioxide (TiO2) when the TiO2 is made highly n-type by fluorine (F) doping. However, for nonstoichiometric titanium oxide (TiOX<2) the effect of F on the turnover rate is negligible. Studies of the titanium oxide electronic structure show that the energy of free electrons in the oxide determines the rate of reaction. These results suggest that highly n-type TiO2 electronically activates adsorbed oxygen (O) by electron spillover to form an active O- intermediate. © 2011 American Chemical Society.

Decolorization and mineralization of Allura Red AC aqueous solutions by electrochemical advanced oxidation processes

Energy Technology Data Exchange (ETDEWEB)

Thiam, Abdoulaye; Sirés, Ignasi; Garrido, José A.; Rodríguez, Rosa M.; Brillas, Enric, E-mail: brillas@ub.edu

2015-06-15

Highlights: • Quicker degradation of Allura Red AC in the order EO-H{sub 2}O{sub 2} < EF < PEF with Pt or BDD anode. • Almost total mineralization achieved by the most powerful PEF process with BDD. • Similar decolorization and mineralization rate in SO{sub 4}{sup 2−}, ClO{sub 4}{sup −} and NO{sub 3}{sup −} media. • In Cl{sup −} medium, only slightly larger decolorization rate but strong inhibition of mineralization. • Identification of aromatic products, carboxylic acids and released NH{sub 4}{sup +}, NO{sub 3}{sup −} and SO{sub 4}{sup 2−} ions. - Abstract: The decolorization and mineralization of solutions containing 230 mg L{sup −1} of the food azo dye Allura Red AC at pH 3.0 have been studied upon treatment by electrochemical oxidation with electrogenerated H{sub 2}O{sub 2} (EO-H{sub 2}O{sub 2}), electro-Fenton (EF) and photoelectro-Fenton (PEF). Experiments were performed with a stirred tank reactor containing a boron-doped diamond (BDD) or Pt anode and an air-diffusion cathode to generate H{sub 2}O{sub 2}. The main oxidants were hydroxyl radicals formed at the anode surface from water oxidation and in the bulk from Fenton’s reaction between H{sub 2}O{sub 2} and added Fe{sup 2+}. The oxidation ability increased in the sequence EO-H{sub 2}O{sub 2} < EF < PEF and faster degradation was always obtained using BDD. PEF process with BDD yielded almost total mineralization following similar trends in SO{sub 4}{sup 2−}, ClO{sub 4}{sup −} and NO{sub 3}{sup −} media, whereas in Cl{sup −} medium, mineralization was inhibited by the formation of recalcitrant chloroderivatives. GC–MS analysis confirmed the cleavage of the −N=N− bond with formation of two main aromatics in SO{sub 4}{sup 2−} medium and three chloroaromatics in Cl{sup −} solutions. The effective oxidation of final oxalic and oxamic acids by BDD along with the photolysis of Fe(III)-oxalate species by UVA light accounted for the superiority of PEF with BDD. NH{sub 4

δ- and δ'-shock wave types of singular solutions of systems of conservation laws and transport and concentration processes

International Nuclear Information System (INIS)

Shelkovich, V M

2008-01-01

This is a survey of some results and problems connected with the theory of generalized solutions of quasi-linear conservation law systems which can admit delta-shaped singularities. They are the so-called δ-shock wave type solutions and the recently introduced δ (n) -shock wave type solutions, n=1,2,..., which cannot be included in the classical Lax-Glimm theory. The case of δ- and δ'-shock waves is analyzed in detail. A specific analytical technique is developed to deal with such solutions. In order to define them, some special integral identities are introduced which extend the concept of weak solution, and the Rankine-Hugoniot conditions are derived. Solutions of Cauchy problems are constructed for some typical systems of conservation laws. Also investigated are multidimensional systems of conservation laws (in particular, zero-pressure gas dynamics systems) which admit δ-shock wave type solutions. A geometric aspect of such solutions is considered: they are connected with transport and concentration processes, and the balance laws of transport of 'volume' and 'area' to δ- and δ'-shock fronts are derived for them. For a 'zero-pressure gas dynamics' system these laws are the mass and momentum transport laws. An algebraic aspect of these solutions is also considered: flux-functions are constructed for them which, being non-linear, are nevertheless uniquely defined Schwartz distributions. Thus, a singular solution of the Cauchy problem generates algebraic relations between its components (distributions).

Air-stable n-type colloidal quantum dot solids

KAUST Repository

Ning, Zhijun; Voznyy, Oleksandr; Pan, Jun; Hoogland, Sjoerd H.; Adinolfi, Valerio; Xu, Jixian; Li, Min; Kirmani, Ahmad R.; Sun, Jonpaul; Minor, James C.; Kemp, Kyle W.; Dong, Haopeng; Rollny, Lisa R.; Labelle, André J.; Carey, Graham H.; Sutherland, Brandon R.; Hill, Ian G.; Amassian, Aram; Liu, Huan; Tang, Jiang; Bakr, Osman; Sargent, E. H.

2014-01-01

Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.

Air-stable n-type colloidal quantum dot solids

KAUST Repository

Ning, Zhijun

2014-06-08

Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Bulk-heterojunction organic solar cells sandwiched by solution processed molybdenum oxide and titania nanosheet layers

Science.gov (United States)

Itoh, Eiji; Goto, Yoshinori; Fukuda, Katsutoshi

2014-02-01

The contributions of ultrathin titania nanosheet (TN) crystallites were studied in both an inverted bulk-heterojunction (BHJ) cell in an indium-tin oxide (ITO)/titania nanosheet (TN)/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic device and a conventional BHJ cell in ITO/MoOx/P3HT:PCBM active layer/TN/Al multilayered photovoltaic device. The insertion of only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film prepared by the layer-by-layer deposition technique effectively decreased the leakage current and increased the open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (η). The conventional cell sandwiched between a solution-processed, partially crystallized molybdenum oxide hole-extracting buffer layer and a TN electron extracting buffer layer showed comparable cell performance to a device sandwiched between vacuum-deposited molybdenum oxide and TN layers, whereas the inverted cell with solution-processed molybdenum oxide showed a poorer performance probably owing to the increment in the leakage current across the film. The abnormal S-shaped curves observed in the inverted BHJ cell above VOC disappeared with the use of a polyfluorene-based cationic semiconducting polymer as a substitute for an insulating PDDA film, resulting in the improved cell performance.

All solution roll-to-roll processed polymer solar cells free from indium-tin-oxide and vacuum coating steps

DEFF Research Database (Denmark)

Krebs, Frederik C

2009-01-01

of a bottom electrode comprising silver nanoparticles on a 130 micron thick polyethyleneternaphthalate (PEN) substrate. Subsequently an electron transporting layer of zinc oxide nanoparticles was applied from solution followed by an active layer of P3HT-PCBM and a hole transporting layer of PEDOT......, 3 and 8 stripes. All five layers in the device were processed from solution in air and no vacuum steps were employed. An additional advantage is that the use of indium-tin-oxide (ITO) is avoided in this process. The devices were tested under simulated sunlight (1000 W m−2, AM1.5G) and gave a typical...

Solution-processed organic thermoelectric materials exhibiting doping-concentration-dependent polarity.

Science.gov (United States)

Hwang, Sunbin; Potscavage, William J; Yang, Yu Seok; Park, In Seob; Matsushima, Toshinori; Adachi, Chihaya

2016-10-26

Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materials's redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m -1 K -2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.

Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

Energy Technology Data Exchange (ETDEWEB)

Jia, Yifan; Lv, Hongliang [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Song, Qingwen, E-mail: qwsong@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071 (China); Tang, Xiaoyan, E-mail: xytang@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Xiao, Li; Wang, Liangyong; Tang, Guangming [Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057 (China); Zhang, Yimen; Zhang, Yuming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

2017-03-01

Highlights: • Effect of oxidation temperature on interfacial properties of SiO{sub 2}/SiC is investigated. • Raising the oxidation temperature effectively decreases the density of NITs and N{sub eff}. • The higher oxidation temperature reduces the surface RMS roughness of the grow SiO{sub 2}. • SIMS and XPS results reveal the improvement mechanism of high temperature oxidation. - Abstract: The effect of oxidation temperature on interfacial properties of n-type 4H-SiC metal-oxide-semiconductor capacitors has been systematically investigated. Thermal dry oxidation process with three different oxidation temperatures 1200 °C, 1300 °C and 1350 °C were employed to grow SiO{sub 2} dielectric, following by the standard post-oxidation annealing (POA) in NO ambience at 1175 °C for 2 h. The root mean square (RMS) roughness measured by Atomic Force Microscopy for the thermally grown SiO{sub 2} before POA process is reduced with increasing the oxidation temperature, obtaining an atomically flat surface with a RMS of 0.157 nm from the sample oxidized at 1350 °C. Several kinds of electrical measurements were used to evaluate the densities of near interface traps and effective fixed dielectric charge for the samples, exhibiting a trend reduced with increasing the oxidation temperature. The interface state density of 3 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.2 eV from the conduction band edge was achieved from conductance method measurement for the sample oxidized at 1350 °C. The results from Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy demonstrate that high oxidation temperature can reduce the width of transition layer, the excess Si and silicon suboxide compositions near the interface, leading to effective improvement of the interfacial properties.

A catalytic wet oxidation process for mixed waste volume reduction/recycling

International Nuclear Information System (INIS)

Dhooge, Patrick M.

1992-01-01

Mixed wastes have presented a challenge to treatment and destruction technologies. A recently developed catalytic wet oxidation method has promising characteristics for volume reduction and recycling of mixed wastes. The process utilizes iron (III) as an oxidant in the presence of homogeneous cocatalysts which increase organics' oxidation rates and the rate of oxidation of iron (II) by oxygen. The reaction is conducted in an aqueous mineral acid solution at temperatures of 373 - 573 deg K. The mineral acid should solvate a number of heavy metals, including U and Pu. Studies of reaction rates show that the process can oxidize a wide range of organic compounds including aromatics and chlorinated hydrocarbons. Rate constants in the range of 10 -7 to 10 -4 sec -1 , depending on the cocatalyst, acidity, type of anions, type of organic, temperature, and time. Activation energies ranged from 25. to 32. KJ/mole. Preliminary measurements of the extent of oxidation which could be obtained ranged from 80% for trichloroethylene to 99.8% for 1,2,4-trimethylbenzene; evidence was obtained that absorption by the fluorocarbon liners of the reaction bombs allowed some of the organics to escape exposure to the catalyst solution. The results indicate that complete oxidation of the organics used here, and presumably many others, can be achieved. (author)

Variable valence of praseodymium in rare-earth oxide solid solutions

International Nuclear Information System (INIS)

Kravchinskaya, M.V.; Merezhinskii, K.Y.; Tikhonov, P.A.

1986-01-01

Solid solutions of elevated praseodymium oxide content have interesting electrical properties, making them the basis for the manufacture of high-temperature electrically conducting materials. Establishment of the composition-structure-valence state relationships enables control of the material properties. The authors performed investigations using a thermogravimetric apparatus with an electronic microbalance of type EM-5-3M, and using x-ray phase analysis of powders (DRON-1 diffractometer, CuK /SUB alpha/ -radiation). The authors also studied the kinetics of praseodymium oxidation with a thermogravimetric apparatus under isothermal conditions. Evaluation of the results with the equation of Kolmogorov, Erofeev, and Avraam indicates that the process is limited by the chemical oxidation of praseodymium and not by diffusion

Method of processing plutonium and uranium solution

International Nuclear Information System (INIS)

Otsuka, Katsuyuki; Kondo, Isao; Suzuki, Toru.

1989-01-01

Solutions of plutonium nitrate solutions and uranyl nitrate recovered in the solvent extraction step in reprocessing plants and nuclear fuel production plants are applied with low temperature treatment by means of freeze-drying under vacuum into residues containing nitrates, which are denitrated under heating and calcined under reduction into powders. That is, since complicate processes of heating, concentration and dinitration conducted so far for the plutonium solution and uranyl solution are replaced with one step of freeze-drying under vacuum, the process can be simplified significantly. In addition, since the treatment is applied at low temperature, occurrence of corrosion for the material of evaporation, etc. can be prevented. Further, the number of operators can be saved by dividing the operations into recovery of solidification products, supply and sintering of the solutions and vacuum sublimation. Further, since nitrates processed at a low temperature are powderized by heating dinitration, the powderization step can be simplified. The specific surface area and the grain size distribution of the powder is made appropriate and it is possible to obtain oxide powders of physical property easily to be prepared into pellets. (N.H.)

Oxidation-extraction of uranium from wet-process phosphoric acid

International Nuclear Information System (INIS)

Lawes, B.C.

1985-01-01

The invention involves an improvement to the reductive stripping process for recovering uranium values from wet-process phosphoric acid solution, where uranium in the solution is oxidized to uranium (VI) oxidation state and then extracted from the solution by contact with a water immiscible organic solvent, by adding sufficient oxidant, hydrogen peroxide, to obtain greater than 90 percent conversion of the uranium to the uranium (VI) oxidation state to the phosphoric acid solution and simultaneously extracting the uranium (VI)

COMPARISON OF DIFFERENT ADVANCED OXIDATION PROCESSES DEGRADING P-CHLOROPHENOL IN AQUEOUS SOLUTION

Directory of Open Access Journals (Sweden)

H. Movahedyan ، A. M. Seid Mohammadi ، A. Assadi

2009-07-01

Full Text Available In present study, degradation of p-chlorophenol using several oxidation systems involving advanced oxidation processes such as ultraviolet/H2O2, microwave/H2O2 and both in the absence of hydrogen peroxide in batch mode by photolytic pilot plant and modified domestic microwave oven was evaluated. The oxidation rate was influenced by many factors, such as the pH value, the amount of hydrogen peroxide, irradiation time and microwave power. The optimum conditions obtained for the best degradation rate were pH=7 and H2O2 concentration of 0.05 mol/L for ultraviolet/H2O2 system and pH=10.5, H2O2 concentration of about 0.1 mol/L and microwave irradiation power of about 600W for microwave/H2O2 system at constant p-chlorophenol concentration. The degradation of p-chlorophenol by different types of oxidation processes followed first order rate decay kinetics. The rate constants were 0.137, 0.012, 0.02 and 0.004/min1 for ultraviolet/H2O2, microwave/H2O2, ultraviolet and microwave irradiation alone. Finally a comparison of the specific energy consumption showed that ultraviolet/H2O2 process reduced the energy consumption by at least 67% compared with the microwave/H2O2 process.

Simultaneous nitrate reduction and acetaminophen oxidation using the continuous-flow chemical-less VUV process as an integrated advanced oxidation and reduction process

Energy Technology Data Exchange (ETDEWEB)

Moussavi, Gholamreza, E-mail: moussavi@modares.ac.ir; Shekoohiyan, Sakine

2016-11-15

Highlights: • Simultaneous advanced oxidation and reduction processes were explored in VUV system. • Complete reduction of nitrate to N{sub 2} was achieved at the presence of acetaminophen. • Complete degradation of acetaminophen was achieved at the presence of nitrate. • Over 95% of acetaminophen was mineralized in the VUV photoreactor. • VUV is a chemical-less advanced process for treating water emerging contaminants. - Abstract: This work was aimed at investigating the performance of the continuous-flow VUV photoreactor as a novel chemical-less advanced process for simultaneously oxidizing acetaminophen (ACT) as a model of pharmaceuticals and reducing nitrate in a single reactor. Solution pH was an important parameter affecting the performance of VUV; the highest ACT oxidation and nitrate reduction attained at solution pH between 6 and 8. The ACT was oxidized mainly by HO· while the aqueous electrons were the main working agents in the reduction of nitrate. The performance of VUV photoreactor improved with the increase of hydraulic retention time (HRT); the complete degradation of ACT and ∼99% reduction of nitrate with 100% N{sub 2} selectivity achieved at HRT of 80 min. The VUV effluent concentrations of nitrite and ammonium at HRT of 80 min were below the drinking water standards. The real water sample contaminated with the ACT and nitrate was efficiently treated in the VUV photoreactor. Therefore, the VUV photoreactor is a chemical-less advanced process in which both advanced oxidation and advanced reduction reactions are accomplished. This unique feature possesses VUV photoreactor as a promising method of treating water contaminated with both pharmaceutical and nitrate.

Simultaneous nitrate reduction and acetaminophen oxidation using the continuous-flow chemical-less VUV process as an integrated advanced oxidation and reduction process

International Nuclear Information System (INIS)

Moussavi, Gholamreza; Shekoohiyan, Sakine

2016-01-01

Highlights: • Simultaneous advanced oxidation and reduction processes were explored in VUV system. • Complete reduction of nitrate to N_2 was achieved at the presence of acetaminophen. • Complete degradation of acetaminophen was achieved at the presence of nitrate. • Over 95% of acetaminophen was mineralized in the VUV photoreactor. • VUV is a chemical-less advanced process for treating water emerging contaminants. - Abstract: This work was aimed at investigating the performance of the continuous-flow VUV photoreactor as a novel chemical-less advanced process for simultaneously oxidizing acetaminophen (ACT) as a model of pharmaceuticals and reducing nitrate in a single reactor. Solution pH was an important parameter affecting the performance of VUV; the highest ACT oxidation and nitrate reduction attained at solution pH between 6 and 8. The ACT was oxidized mainly by HO· while the aqueous electrons were the main working agents in the reduction of nitrate. The performance of VUV photoreactor improved with the increase of hydraulic retention time (HRT); the complete degradation of ACT and ∼99% reduction of nitrate with 100% N_2 selectivity achieved at HRT of 80 min. The VUV effluent concentrations of nitrite and ammonium at HRT of 80 min were below the drinking water standards. The real water sample contaminated with the ACT and nitrate was efficiently treated in the VUV photoreactor. Therefore, the VUV photoreactor is a chemical-less advanced process in which both advanced oxidation and advanced reduction reactions are accomplished. This unique feature possesses VUV photoreactor as a promising method of treating water contaminated with both pharmaceutical and nitrate.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

Catalysed electrolytic metal oxide dissolution processes

International Nuclear Information System (INIS)

Machuron-Mandard, X.

1994-01-01

The hydrometallurgical processes designed for recovering valuable metals from mineral ores as well as industrial wastes usually require preliminary dissolution of inorganic compounds in aqueous media before extraction and purification steps. Unfortunately, most of the minerals concerned hardly or slowly dissolve in acidic or basic solutions. Metallic oxides, sulfides and silicates are among the materials most difficult to dissolve in aqueous solutions. They are also among the main minerals containing valuable metals. The redox properties of such materials sometimes permit to improve their dissolution by adding oxidizing or reducing species to the leaching solution, which leads to an increase in the dissolution rate. Moreover, limited amounts of redox promoters are required if the redox agent is regenerated continuously thanks to an electrochemical device. Nuclear applications of such concepts have been suggested since the dissolution of many actinide compounds (e.g., UO 2 , AmO 2 , PuC, PuN,...) is mainly based on redox reactions. In the 1980s, improvements of the plutonium dioxide dissolution process have been proposed on the basis of oxidation-reduction principles, which led a few years later to the design of industrial facilities (e.g., at Marcoule or at the french reprocessing plant of La Hague). General concepts and well-established results obtained in France at the Atomic Energy Commission (''Commissariat a l'Energie Atomique'') will be presented and will illustrate applications to industrial as well as analytical problems. (author)

All-Solution-Processed Metal-Oxide-Free Flexible Organic Solar Cells with Over 10% Efficiency.

Science.gov (United States)

Song, Wei; Fan, Xi; Xu, Bingang; Yan, Feng; Cui, Huiqin; Wei, Qiang; Peng, Ruixiang; Hong, Ling; Huang, Jiaming; Ge, Ziyi

2018-05-16

All-solution-processing at low temperatures is important and desirable for making printed photovoltaic devices and also offers the possibility of a safe and cost-effective fabrication environment for the devices. Herein, an all-solution-processed flexible organic solar cell (OSC) using poly(3,4-ethylenedioxythiophene):poly-(styrenesulfonate) electrodes is reported. The all-solution-processed flexible devices yield the highest power conversion efficiency of 10.12% with high fill factor of over 70%, which is the highest value for metal-oxide-free flexible OSCs reported so far. The enhanced performance is attributed to the newly developed gentle acid treatment at room temperature that enables a high-performance PEDOT:PSS/plastic underlying substrate with a matched work function (≈4.91 eV), and the interface engineering that endows the devices with better interface contacts and improved hole mobility. Furthermore, the flexible devices exhibit an excellent mechanical flexibility, as indicated by a high retention (≈94%) of the initial efficiency after 1000 bending cycles. This work provides a simple route to fabricate high-performance all-solution-processed flexible OSCs, which is important for the development of printing, blading, and roll-to-roll technologies. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution-processed inorganic copper(I) thiocyanate (CuSCN) hole transporting layers for efficient p–i–n perovskite solar cells

KAUST Repository

Zhao, Kui

2015-08-27

CuSCN is a highly transparent, highly stable, low cost and easy to solution process HTL that is proposed as a low cost replacement to existing organic and inorganic metal oxide hole transporting materials. Here, we demonstrate hybrid organic-inorganic perovskite-based p-i-n planar heterojunction solar cells using a solution-processed copper(I) thiocyanate (CuSCN) bottom hole transporting layer (HTL). CuSCN, with its high workfunction, increases the open circuit voltage (Voc) by 0.23 V to 1.06 V as compared with devices based on the well-known poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (0.83 V), resulting in a superior power conversion efficiency (PCE) of 10.8% without any notable hysteresis. Photoluminescence measurements suggest a similar efficiency of charge transfer at HTL/perovskite interface as PEDOT:PSS. However, we observe more efficient light harvesting in the presence of CuSCN at shorter wavelengths despite PEDOT:PSS being more transparent. Further investigation of the microstructure and morphology reveals differences in the crystallographic texture of the polycrystalline perovskite film, suggesting somewhat modified perovskite growth on the surface of CuSCN. The successful demonstration of the solution-processed inorganic HTL using simple and low temperature processing routes bodes well for the development of reliable and efficient flexible p-i-n perovskite modules or for integration as a front cell in hybrid tandem solar cells.

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

International Nuclear Information System (INIS)

Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin; Li Tie

2008-01-01

Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min -1 , while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

2012-01-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

Complex formation in aqueous trimethylamine-N-oxide (TMAO) solutions.

Science.gov (United States)

Hunger, Johannes; Tielrooij, Klaas-Jan; Buchner, Richard; Bonn, Mischa; Bakker, Huib J

2012-04-26

We study aqueous solutions of the amphiphilic osmolyte trimethylamine-N-oxide (TMAO) using broadband dielectric spectroscopy and femtosecond mid-infrared spectroscopy. Both experiments provide strong evidence for distinctively slower rotation dynamics for water molecules interacting with the hydrophobic part of the TMAO molecules. Further, water is found to interact more strongly at the hydrophilic site of the TMAO molecules: we find evidence for the formation of stable, TMAO·2H2O and/or TMAO·3H2O complexes. While this coordination structure seems obvious, the lifetime of these complexes is found to be extraordinarily long (>50 ps). The existence of these long-lived complexes leads to pronounced parallel dipole correlations between water and TMAO, reflected in enhanced amplitudes in the dielectric spectra. The strong interaction between water and TMAO also results in a red-shifted band for the O-D stretching vibration of HDO molecules in an isotopically diluted aqueous TMAO solution. This O-D stretching vibration has a vibrational lifetime of 670 fs, which is significantly shorter than the lifetime of the O-D stretch vibration of bulk-like HDO molecules, presumably due to efficient coupling to vibrational modes of TMAO. The rotational dynamics of these O-D groups are slowed down dramatically, and are limited by the rotation of the whole complex, while the O-D vector oriented away from TMAO probably shows an accelerated reorientation.

Fabrication of visible light-triggered photocatalytic materials from the coupling of n-type zinc oxide and p-type copper oxide

Science.gov (United States)

Gorospe, A. B.; Herrera, M. U.

2017-04-01

Coupling of copper oxide (CuO) and zinc oxide (ZnO) was done by chemical precipitation method. In this method, copper sulfate pentahydrate and zinc sulfate heptahydrate salt precursors were separately dissolved in distilled water; then were mixed together. The copper sulfate-zinc sulfate solution was then combined with a sodium hydroxide solution. The precipitates were collected and washed in distilled water and ethanol several times, then filtered and dried. The dried sample was grounded, and then undergone heat treatment. After heating, the sample was grounded again. Zinc oxide powder and copper oxide powder were also fabricated using chemical precipitation method. X-Ray Diffraction measurements of the coupled CuO/ZnO powder showed the presence of CuO and ZnO in the fabricated sample. Furthermore, other peaks shown by XRD were also identified corresponding to copper, copper (II) oxide, copper sulfate and zinc sulfate. Results of the photocatalytic activity investigation show that the sample exhibited superior photocatalytic degradation of methyl orange under visible light illumination compared to copper oxide powder and zinc oxide powder. This may be attributed to the lower energy gap at the copper oxide-zinc oxide interface, compared to zinc oxide, allowing visible light to trigger its photocatalytic activity.

n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

Science.gov (United States)

Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

2018-03-01

We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

A Study on N{sub 2}O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor

Energy Technology Data Exchange (ETDEWEB)

Cho, Doohyung; Park, Kunsik; Yoo, Seongwook; Kim, Sanggi; Lee, Jinhwan; Kim, Kwangsoo [Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

2017-08-15

The effect of N{sub 2}O direct oxidation processes with re-oxidation on SiC/SiO{sub 2} interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed N{sub 2}O direct oxidation processes with re-oxidation, oxides were grown in N{sub 2}O ambient, diluted in high-purity N{sub 2} to 10% concentration, for 5 h at 1230 ℃. After the growth, some samples were annealed additionally at 1200 ℃ in O{sub 2} or H{sub 2}O for 20 min. N{sub 2}O direct oxidation with re-oxidation processes was confirmed that SiC/SiO{sub 2} interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality SiC/SiO{sub 2} interface properties.

Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

Science.gov (United States)

Liau, Leo Chau-Kuang; Lin, Yun-Guo

2015-01-01

Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

Solution processed white light photodetector based N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor

Energy Technology Data Exchange (ETDEWEB)

Tozlu, Cem, E-mail: tozlu.cem@gmail.com [Department of Energy System Engineering, Faculty of Engineering, Karamanoğlu Mehmetbey University, 70100 Karaman (Turkey); Kus, Mahmut [Department of Chemical Engineering, Selcuk University, Konya 42075 (Turkey); Advanced Technology Research and Application Center, Selcuk University, Konya 42075 (Turkey); Can, Mustafa [Department of Engineering Sciences, Faculty of Engineering, Izmir Katip Celebi University, Cigli, 35620 Izmir (Turkey); Ersöz, Mustafa [Advanced Technology Research and Application Center, Selcuk University, Konya 42075 (Turkey); Department of Chemistry, Selcuk University, Konya 42075 (Turkey)

2014-10-31

In this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric dielectric under different white light illuminations. N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide and divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron mobility of 0.6 × 10{sup −3} cm{sup 2}/V·s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor. The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively. These findings indicate that perylene diimide is a promising material for use on organic based phototransistors. - Highlights: • A solution processed n-type organic phototransistor was fabricated. • The geometry of device allows to be used double sided photo-sensor to detect light. • The accumulation of charge carrier is effected strongly by illumination intensity. • The current amplification was observed clearly under illumination without gate bias.

Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

KAUST Repository

Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

2013-01-01

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a

Application of oxide coatings to metals in electrolyte solutions by microplasma methods

Directory of Open Access Journals (Sweden)

Vladimirovich Timoshenko, Aleksander

2000-10-01

Full Text Available Microplasma oxidation of aluminium alloys in alkaline colloidal and finely dispersed solutions is analysed. Oxidation causes both electrolyte and alloy components to be incorporated into resultant coatings, which affect the deposition parameters and coating properties. Oxidation process has been studied at spark, micro-are, and are stages under an alternating current polarisation and under purely anodic polarisation. It is shown that the cathodic component of the alternating current not only facilitates subsequent anodic process, but also contributes to the formation of an oxide layer.

Se ha examinado la aplicación de procesos de oxidación por microplasma de las aleaciones de aluminio en electrólitos alcalinos, tanto en estado coloidal como microdisperso. Se descubrió que durante el proceso de la oxidación, en la estructura del recubrimiento óxido, van incluyéndose tanto los componentes del electrólito como los de la aleación, lo que modifica las propiedades y parámetros de deposición de las aleaciones obtenidas. El proceso de la oxidación se examinó a lo largo de las siguientes etapas: chispas, micro-arco y arco, tanto bajo la polarización de la corriente alterna como en condiciones de polarización anódica. Se ha demostrado que la componente catódica de la corriente alterna polarizante no sólo facilita los siguientes procesos anódicos, sino que además contribuye a los procesos de formación de la capa óxida.

Solution-processed copper-nickel nanowire anodes for organic solar cells

Science.gov (United States)

Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

2014-05-01

This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

KAUST Repository

Wang, Zhenwei

2018-03-11

Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

Adjustment of valence state of Pu and Np in nitric solution containing N,N-dimethylhydroxylamine and monomethylhydrazine by electrolysis

Energy Technology Data Exchange (ETDEWEB)

Zhang, H.; Ye, G.A.; Cong, H.F. [China Institute of Atomic Energy, Beijing (China)] [and others

2012-07-01

A study of the electrochemical behaviors of N,N-dimethylhydroxylamine (DMHAN) and monomethyl hydrazine (MMH) in nitric acid solution on Pt electrodes were carried out by cyclic voltammetry (CV) and linear sweep voltammetry (LSV) methods. The diffusion coefficients of DMHAN and MMH were obtained by CV. The values are found to be 0.53 x 10{sup -6}6 cm{sup 2}/s D{sub (DMHAN)} and 0.88 x 10{sup -5} cm{sup 2}/s D{sub (MMH)}. The equilibrium potentials (+0.47 V vs. SCE for DMHAN and +0.31 V vs. SCE for MMH) were also measured using Tafel curves. Various valence states of Pu and Np in HNO{sub 3} solution containing DMHAN and MMH in the electrolytic process were investigated by an electrolytic cell using a platinum as the anode and a titanium plate as the cathode. In this procedure, MMH was first electro-oxidized on the Pt anode and Np(V) was reduced to Np(IV) on the Ti cathode. After MMH was entirely consumed, the accumulation of HNO{sub 2} (due to the electrochemical reduction of nitric acid on the Ti cathode) caused a significantly fast catalytic reaction of DMHAN with HNO{sub 3} to form HNO{sub 2}. HNO{sub 2} can oxidize Pu(III) to Pu(IV) quickly. As a result, both oxidation states of Pu and Np were found to be tetravalent in the post-electrolysis solution. A convenient method to keep the post-electrolysis solution at 70 C was used to adjust the oxidation state of Np in it's pentavalent state while retaining the tetravalent state of Pu. This study developed an electrolytic process for the preparation of 2AF feed (the feed of Pu purification cycle) in APOR (Advanced Purex Process Based on Organic Reductants) process by electrochemically oxidizing Pu(III) and selectively adjusting the valence state of neptunium to either Np(IV) or Np(V). (orig.)

Photo-assisted local oxidation of GaN using an atomic force microscope

International Nuclear Information System (INIS)

Hwang, J S; Hu, Z S; Lu, T Y; Chen, L W; Chen, S W; Lin, T Y; Hsiao, C-L; Chen, K-H; Chen, L-C

2006-01-01

This paper introduces a photo-assisted atomic force microscope (AFM) local oxidation technique which is capable of producing highly smooth oxide patterns with heights reaching several tens of nanometres on both n- and p-types of GaN (and in principle on most semiconductors) without the use of chemicals. The novel methodology relies on UV illumination of the surface of the substrate during conventional AFM local oxidation. A low 1.2 V threshold voltage for n-type GaN was obtained, which can be explained by UV photo-generation of excess electron-hole pairs in the substrate near the junction, thereby reducing the electric field required to drive carrier flow through the tip-sample Schottky barrier. It was demonstrated that the presence or absence of light alone was sufficient to switch the growth of the oxide on or off. The photo-assisted AFM oxidation technique is of immediate interest to the semiconductor industry for the fabrication of GaN-based complementary metal-oxide-semiconductor devices and nanodevices, improves chances for AFM-type data storage, and presents new degrees of freedom for process control technique

Process for the fabrication of nuclear fuel oxide pellets

International Nuclear Information System (INIS)

Francois, Bernard; Paradis, Yves.

1977-01-01

Process for the fabrication of nuclear fuel oxide pellets of the type for which particles charged with an organic binder -selected from the group that includes polyvinyl alcohol, carboxymethyl cellulose, polyvinyl compounds and methyl cellulose- are prepared from a powder of such an oxide, for instance uranium dioxide. These particles are then compressed into pellets which are then sintered. Under this process the binder charged particles are prepared by stirring the powder with a gas, spraying on to the stirred powder a solution or a suspension in a liquid of this organic binder in order to obtain these particles and then drying the particles so obtained with this gas [fr

Treatment of phosphorus-uraniferous solution

International Nuclear Information System (INIS)

Araujo Figueiredo, C. de.

1984-01-01

A solvent extraction process for the recovery of uranium from Itataia wet process phosphoric acid was studied. The proposed process consists of two extraction cycles. Uranium, reduced to its tetravalent state, is extracted in the first cycle using octylpyrosphoric acid (OPPA) in a kerosene type diluent. Stripping is accomplished with concentrated raffinate phosphoric acid and an oxidizing agent, in order to convert U (IV) to its hexavalent state. The strip solution from the first cycle is processed in the second cycle with the synergistic combination of di-( 2- ethylhexyl) phosphoric acid and tri-n-octylphosphine oxide (D2EHPA-TOPO). The extract is scrubbed and uranium is stripped with ammonium carbonate solution and recovered as a commercial concentrate. The results obtained from batch tests were used to set up a bench scale array of mixer settlers so as to demonstrate the process. (Author) [pt

Simple solution-processed titanium oxide electron transport layer for efficient inverted polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Sun, Liang [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shen, Wenfei [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Institute of Hybrid Materials, Laboratory of New Fiber Materials and Modern Textile—The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Chen, Weichao [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Wang, Ning; Dou, Xiaowei; Han, Liangliang; Wen, Shuguang [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China)

2014-12-31

Titanium oxide (TiO{sub X}) is an effective electron transport layer (ETL) in polymer solar cells (PSCs). We report efficient inverted PSCs with a simple solution-processed amorphous TiO{sub X} (s-TiO{sub X}) film as an ETL. The s-TiO{sub X} film with high light transmittance was prepared by spin-coating titanium (IV) isopropoxide isopropanol solution on indium tin oxide coated glass in inert and then placed in air under room temperature for 60 min. The introduction of s-TiO{sub X} ETL greatly improved the short circuit current density of the devices. PSCs based on poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester and poly(4,8-bis-alkyloxy-benzo[1,2-b:4,5-b′]dithiophene-alt-alkylcarbonyl -thieno[3,4-b]thiophene):[6,6]-phenyl- C71-butyric acid methyl ester using s-TiO{sub X} film as ETL shows high power conversion efficiency of 4.29% and 6.7% under the illumination of AM 1.5G, 100 mW/cm{sup 2}, which shows enhancements compared to the conventional PSCs with poly(styrenesulfonate)-doped poly(ethylenedioxythiophene) as anode buffer layer. In addition, the device exhibits good stability in a humid ambient atmosphere without capsulation. The results indicate that the annealing-free, simple solution processed s-TiO{sub X} film is an efficient ETL for high-performance PSCs. - Highlights: • High quality s-TiO{sub X} films were prepared by a simple, solution method without thermal treatment. • The s-TiO{sub X} films with high transmittance are very smooth. • The organic photovoltaic performance with s-TiO{sub X} film improved greatly and exhibited good stability. • The annealing-free, simple prepared s-TiO{sub X} film will be much compatible with flexible substrates.

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

Science.gov (United States)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

Oxide nano-rod array structure via a simple metallurgical process

International Nuclear Information System (INIS)

Nanko, M; Do, D T M

2011-01-01

A simple method for fabricating oxide nano-rod array structure via metallurgical process is reported. Some dilute alloys such as Ni(Al) solid solution shows internal oxidation with rod-like oxide precipices during high-temperature oxidation with low oxygen partial pressure. By removing a metal part in internal oxidation zone, oxide nano-rod array structure can be developed on the surface of metallic components. In this report, Al 2 O 3 or NiAl 2 O 4 nano-rod array structures were prepared by using Ni(Al) solid solution. Effects of Cr addition into Ni(Al) solid solution on internal oxidation were also reported. Pack cementation process for aluminizing of Ni surface was applied to prepare nano-rod array components with desired shape. Near-net shape Ni components with oxide nano-rod array structure on their surface can be prepared by using the pack cementation process and internal oxidation,

Simultaneous nitrate reduction and acetaminophen oxidation using the continuous-flow chemical-less VUV process as an integrated advanced oxidation and reduction process.

Science.gov (United States)

Moussavi, Gholamreza; Shekoohiyan, Sakine

2016-11-15

This work was aimed at investigating the performance of the continuous-flow VUV photoreactor as a novel chemical-less advanced process for simultaneously oxidizing acetaminophen (ACT) as a model of pharmaceuticals and reducing nitrate in a single reactor. Solution pH was an important parameter affecting the performance of VUV; the highest ACT oxidation and nitrate reduction attained at solution pH between 6 and 8. The ACT was oxidized mainly by HO while the aqueous electrons were the main working agents in the reduction of nitrate. The performance of VUV photoreactor improved with the increase of hydraulic retention time (HRT); the complete degradation of ACT and ∼99% reduction of nitrate with 100% N2 selectivity achieved at HRT of 80min. The VUV effluent concentrations of nitrite and ammonium at HRT of 80min were below the drinking water standards. The real water sample contaminated with the ACT and nitrate was efficiently treated in the VUV photoreactor. Therefore, the VUV photoreactor is a chemical-less advanced process in which both advanced oxidation and advanced reduction reactions are accomplished. This unique feature possesses VUV photoreactor as a promising method of treating water contaminated with both pharmaceutical and nitrate. Copyright © 2016 Elsevier B.V. All rights reserved.

Methanol oxidation on stepped Pt[n(111) x (110)] electrodes: a chronoamperometric study

NARCIS (Netherlands)

Housmans, T.H.M.; Koper, M.T.M.

2003-01-01

The methanol oxidation reaction has been studied on Pt[n(111) × (110)]-type electrodes in a 0.5 M sulfuric acid and 0.025 M methanol solution, using cyclic voltammetry and chronoamperometry. The voltammetric behavior of methanol on the three electrodes under investigation [Pt(111), Pt(554), and

Development studies for a novel wet oxidation process. Phase 2

International Nuclear Information System (INIS)

1994-07-01

DETOX SM is a catalyzed wet oxidation process which destroys organic materials in an acidic water solution of iron at 373 to 473 K. The solution can be used repeatedly to destroy great amounts of organic materials. Since the process is conducted in a contained vessel, air emissions from the process can be well controlled. The solution is also capable of dissolving and concentrating many heavy and radioactive metals for eventual stabilization and disposal. The Phase 2 effort for this project is site selection and engineering design for a DETOX demonstration unit. Site selection was made using a set of site selection criteria and evaluation factors. A survey of mixed wastes at DOE sites was conducted using the Interim Mixed Waste Inventory Report. Sites with likely suitable waste types were identified. Potential demonstration sites were ranked based on waste types, interest, regulatory needs, scheduling, ability to provide support, and available facilities. Engineering design for the demonstration unit is in progress and is being performed by Jacobs Applied Technology. The engineering design proceeded through preliminary process flow diagrams (PFDs), calculation of mass and energy balances for representative waste types, process and instrumentation diagrams (P and IDs), preparation of component specifications, and a firm cost estimate for fabrication of the demonstration unit

Reaction mechanisms and evaluation of effective process operation for catalytic oxidation and coagulation by ferrous solution and hydrogen peroxide

Energy Technology Data Exchange (ETDEWEB)

Lee, S.H.; Moon, H.J.; Kim, Y.M. [Dept. of Environmental Engineering, Sangmyung Univ., Cheonan (Korea); Bae, W.K. [Dept. of Civil and Environmental Engineering, Hanyang Univ., Ansan, Kyounggi (Korea)

2003-07-01

This research was carried out to evaluate the removal efficiencies of COD{sub cr} and colour for the dyeing wastewater by ferrous solution and the different dosage of H{sub 2}O{sub 2} in Fenton process. In the case of H{sub 2}O{sub 2} divided dosage, 7:3 was more effective than 3:7 to remove COD{sub cr} and colour. The results showed that COD was mainly removed by Fenton coagulation, where the ferric ions are formed in the initial step of Fenton reaction. On the other hand colour was removed by Fenton oxidation rather than Fenton coagulation. This paper also aims at pursuing to investigate the effective removal mechanisms using ferrous ion coagulation, ferric ion coagulation and Fenton oxidation process. The removal mechanism of COD{sub cr} and colour was mainly coagulation by ferrous ion, ferric ion and Fenton oxidation. The removal efficiencies were dependent on the ferric ion amount at the beginning of the reaction. However the final removal efficiency of COD and colour was in the order of Fenton oxidation, ferric ion coagulation and ferrous ion coagulation. The reason of the highest removal efficiency by Fenton oxidation can be explained by the chain reactions with ferrous solution, ferric ion and hydrogen peroxide. (orig.)

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Xue Zhang

2017-07-01

Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Effects of the multi-step activation process on the carrier concentration of p-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-Kwan [Department of Materials Science and Metallurgical Engineering, Sunchon National University, Sunchon, Chonnam 540-742 (Korea, Republic of); Jeon, Seong-Ran [LED Research and Business Division, Korea Photonics Technology Institute, Gwanju 500-779 (Korea, Republic of); Lee, Ji-Myon, E-mail: jimlee@sunchon.ac.kr [Department of Printed Electronics Engineering, Sunchon National University, Sunchon, Chonnam 540-742 (Korea, Republic of)

2014-06-25

Highlights: • Hole concentration of p-GaN was enhanced by multi-step activation process. • The O{sub 2} plasma treatment is attributed to the enhanced hole concentration of p-GaN. • PL peak intensity was also enhanced by MS activation process. - Abstract: A multi-step activation method, which include an oxygen plasma treatment, chemical treatment, and post annealing in N{sub 2} was proposed to enhance the hole concentration of a p-type GaN epitaxial layer. This process was found to effectively activate p-GaN by increasing the hole concentration compared to that of the conventionally annealed sample. After the optimal oxygen plasma treatment (10 min at a source and table power of 500 W and 100 W, respectively), followed by a HCl and buffered oxide etchant treatment, and then by a post-RTA process in a N{sub 2} environment, the hole concentration was increased from 4.0 × 10{sup 17} to 2.0 × 10{sup 18} cm{sup −3}. The oxygen plasma was found to effectively remove the remaining H atoms and subsequent wet treatment can effectively remove the GaO{sub x} that had formed during O plasma treatment, resulting in the higher intensity of photoluminescence.

Solvent Extraction and Separation of Chromium(III) and (V I) in Aqueous Solutions with Trioctylphosphine Oxide

International Nuclear Information System (INIS)

Sekine, T.; Yamada, M.

1999-01-01

The solvent extraction of chromium(III) and (V I) in aqueous solutions with a solvating type extractant, trioctylphosphine oxide(TOPO), in hexane is studied. Kinetically inert Cr 3+ is extracted from 1 mol dm -3 sodium perchlorate solution very quickly and quantitatively as Cr(H 2 O · TOPO) 6 3+ (CIO 4 -) 3 . Chromium(V I) in hydrochloric acid is extracted effectively as the H 2 CrO $ (H CI) n centre dot TOPO m species ( m = 2 or 3, n = 0 to 2) and the distribution ratio increased by an increase in the acid concentration. From these, a procedure is proposed for the extraction of both chromium(V I) and chromium(III) in aqueous solution separately with 0.1 mol dm -3 TOPO in hexane

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Solution based synthesis of perovskite-type oxide films and powders

International Nuclear Information System (INIS)

McHale, J.M. Jr.

1995-01-01

Conventional solid state reactions are diffusion limited processes that require high temperatures and long reaction times to reach completion. In this work, several solution based methods were utilized to circumvent this diffusion limited reaction and achieve product formation at lower temperatures. The solution methods studied all have the common goal of trapping the homogeneity inherent in a solution and transferring this homogeneity to the solid state, thereby creating a solid atomic mixture of reactants. These atomic mixtures can yield solid state products through diffusionless mechanisms. The effectiveness of atomic mixtures in solid state synthesis was tested on three classes of materials, varying in complexity. A procedure was invented for obtaining the highly water soluble salt, titanyl nitrate, TiO(NO 3 ) 2 , in crystalline form, which allowed the production of titanate materials by freeze drying. The freeze drying procedures yielded phase pure, nanocrystalline BaTiO 3 and the complete SYNROC-B phase assemblage after ten minute heat treatments at 600 C and 1,100 C, respectively. Two novel methods were developed for the solution based synthesis of Ba 2 YCu 3 O 7-x and Bi 2 Sr 2 Ca 2 Cu 3 O 10 . Thin and thick films of Ba 2 YCu 3 O 7-x and Bi 2 Sr 2 Ca 2 Cu 3 O 10 were synthesized by an atmospheric pressure, chemical vapor deposition technique. Liquid ammonia solutions of metal nitrates were atomized with a stream of N 2 O and ignited with a hydrogen/oxygen torch. The resulting flame was used to coat a substrate with superconducting material. Bulk powders of Ba 2 YCu 3 O 7-x and Bi 2 Sr 2 Ca 2 Cu 3 O 10 were synthesized through a novel acetate glass method. The materials prepared were characterized by XRD, TEM, SEM, TGA, DTA, magnetic susceptibility and electrical resistivity measurements

Comparison of Five Advanced Oxidation Processes for Degradation of Pesticide in Aqueous Solution

Directory of Open Access Journals (Sweden)

Augustine Chioma Affam

2018-01-01

Full Text Available The study compared the technical efficiency and economic cost of five advanced oxidation processes (Fenton, UV photo-Fenton, solar photo-Fenton, UV/TiO2/H2O2 and FeGAC/H2O2 for degradation of the pesticides chlorpyrifos cypermethrin and chlorothalonil in aqueous solution. The highest degradation in terms of COD and TOC removals and improvement of the biodegradability (BOD5/COD ratio index (BI were observed to be (i Fenton - 69.03% (COD, 55.61% (TOC, and 0.35 (BI; (ii UV photo-Fenton -78.56% (COD, 63.76% (TOC and 0.38 (BI;  (iii solar photo-Fenton - 74.19% (COD, 58.32% (TOC and 0.36 (BI; (iv UV/TiO2/H2O2 - 53.62% (COD, 21.54% (TOC, and 0.26 (BI; and  (v the most technical efficient and cost effective process was FeGAC/H2O2. At an optimum condition (FeGAC 5 g/L, H2O2 100 mg/L, and reaction time of 60 min at pH 3, the COD and TOC removal efficiency were 96.19 and 85.60%, respectively, and the biodegradation index was 0.40. The degradation rate constant and cost were 0.0246 min-1 and $0.74/kg TOC, respectively. The FeGAC/H2O2 process is the most technically efficient and cost effective for pretreatment of the pesticide wastewater before biological treatment. Copyright © 2018 BCREC Group. All rights reserved Received: 26th July 2017; Revised: 26nd September 2017; Accepted: 27th September 2017; Available online: 22nd January 2018; Published regularly: 2nd April 2018 How to Cite: Affam, A.C., Chaudhuri, M., Kutty, S.R.M. (2018. Comparison of Five Advanced Oxidation Processes for Degradation of Pesticide in Aqueous Solution. Bulletin of Chemical Reaction Engineering & Catalysis, 13 (1: 179-186 (doi:10.9767/bcrec.13.1.1394.179-186

Radiolysis of dodecane--tributylphosphate and nitrous oxide solutions

International Nuclear Information System (INIS)

Razvi, J.

1978-01-01

The chemical effects of 60 Co gamma irradiation on the nuclear fuel reprocessing solvents tributylphosphate (TBP) and dodecane were studied. Nitrous oxide, with concentrations in the range 20 mM to 140 mM, was used as the standard for competition kinetics. Solutions of TBP (with electron fractions of 0.025, 0.05, 0.1 and 0.3) in dodecane were irradiated. Primary gaseous products (non-condensible at 77K) in the radiolysis were nitrogen and hydrogen. Liquid products observed were the dimer, dodecanone, dodecanol, and fragmentation products C 5 -C 11 and C 17 -C 20 . Acid products from TBP were dibutylphosphate (DBP) and monobutylphosphate (MBP). All yields were determined both as a function of TBP and nitrous oxide concentrations. Kinetic analysis of nitrogen yields from dodecane--N 2 O radiolysis gave, G(total scavengable primary species) = 6.7 molecules/100 eV. Yields of dodecane liquid products could not be analyzed quantitatively due to the complex spectrum of products. In dodecane--N 2 O solutions, the dimer showed insignificant changes in yields and product distributions, indicating formation of additional dodecyl radicals in the presence of nitrous oxide. In dodecane--TBP mixtures, dimer yields reduced significantly as did the products from carbon--carbon bond cleavage. The addition of nitrous oxide to the binary mixture caused the dimer yield to increase, confirming formation of C 12 H 25 radicals by nitrous oxide reactions

Transparent megahertz circuits from solution-processed composite thin films.

Science.gov (United States)

Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

2016-04-21

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Efficiency of Advanced H2O2/ZnO Oxidation Process in Ceftriaxone Antibiotic Removal from Aqueous Solutions

Directory of Open Access Journals (Sweden)

Maryam Noroozi cholcheh

2017-11-01

Full Text Available A major concern about pharmaceutical pollution is the presence of antibiotics in water resources through their release into sewers where they cause bacterial resistance and enhanced drug-resistance in human-borne pathogens and growing microbial populations in the environment. The objective of this study was to investigate the efficiency of  the advanced H2O2/ZnO oxidation process in removing ceftriaxone from aqueous solutions. For this purpose, an experimental study was conducted in which the SEM, XRD, and TEM techniques were employed to determine the size of Zinc oxide nano-particles. Additionally, the oxidation process parameters of pH (3-11, molar ratio of H2O2/ZnO (1.5-3, initial concentration of ceftriaxone (5–15 mg/L, and contact time (30-90 min were investigated. Teh data thus obntained were subjected top statistical analysis using the SPSS (ANOVA test. XRD results revealeda hexagonal crystal structure for the nano-ZnO. TEM images confirmed the spherical shape of the nanoparticles. Finally, SEM images revealed that the Zn nanoparticles used in this study were less than 30 nanometers in diameter. Based on the results, an optimum pH of 11, a contact time of 90 minutes, and a H2O2/ZnO molar ratio equal to 1.5 were the optimum conditions to achieve a ceftriaxone removal efficiency of 92%. The advance H2O2/ZnO oxidation process may thus be claimed to be highly capable of removing ceftriaxone from aqueous solutions.

Densification effects on solution-processed indium-gallium-zinc-oxide films and their thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Rim, You Seung; Kim, Hyun Jae [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

2014-09-15

We report the effects of high-pressure annealing (HPA) on solution-processed InGaZnO (IGZO) thin-film transistors (TFTs). HPA increased the density of IGZO films. In particular, annealing in O{sub 2} at 1.0 MPa and 350 C resulted in a high-density and low-porosity IGZO film, as characterized using X-ray reflectivity (XRR) and ellipsometry measurements. This was attributed to the oxidative and compressive effects on the oxygen-deficient solution-processed IGZO film. TFTs annealed in O{sub 2} at 1.0 MPa and 350 C exhibited an increase in the field-effect mobility by a factor of approximately five compared with TFTs annealed in air at 0.1 MPa and 350 C. Furthermore, improvements in reliability under negative and positive bias stresses were also observed following HPA. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

KAUST Repository

Nayak, Pradipta K.

2013-05-08

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

Determination of hydroxylamine in purex process solutions

International Nuclear Information System (INIS)

Ertel, D.; Weindel, P.

1984-05-01

In PUREX process solutions hydroxylamine or HAN (hydrolammonium nitrate) respectively, can be oxidized specifically to give nitrous acid, HNO 2 , which by sybsequent GRIESS reaction forms the well-known reddish azo-dye. Its absorbance is spectrophotometrically measured at 520 nm and results in linear calibration graphs covering the analytical range of 10 -5 to 10 -6 M NH 2 OH. The influence of other reductants (N 2 H 4 , Pu-III) as well as of further PUREX main constituents like U-VI, HNO 3 etc. was checked-up and determined quantitatively. There are no analytical limitations in case of HAN concentrations > 10 -2 M. (orig.) [de

Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Science.gov (United States)

Giraud, Paul; Hou, Bo; Pak, Sangyeon; Inn Sohn, Jung; Morris, Stephen; Cha, SeungNam; Kim, Jong Min

2018-02-01

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

KAUST Repository

Labram, John G.

2015-02-13

Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

International Nuclear Information System (INIS)

Yeon Kwon, Jang; Kyeong Jeong, Jae

2015-01-01

This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed. (invited review)

To the problem on formation kinetics of absorption and polylayer films in anodic oxidation of cadmium in alkali hydroxides. Kinetics of irreversible absorption of oxide

International Nuclear Information System (INIS)

Grachev, D.K.

1978-01-01

An attempt is made to substantiate the formation of adsorption and polylayer films on cadmium electrode during its oxidation in KOH diluted solutions based on the interpretation of data from methods of the potential control. Using relaxation methods (voltammetry and chronoammetry) the conditions were determined at which irreversible abd sorption kinetics of the passivating oxide turns out to dominate the anodic dissolution process in the KOH 1-0.1 N solutions. Parts of monolayer and polylayer surface filling are shown. Kinetics of monolayer oxide growth is interpreted based on the Temkin-Zeldovich type equation for irreversible adsorption process. Ways of the kinetic equation precision are discussed for its full correspondence with the experiment obtained

Electrochemical and Electron Paramagnetic Resonance Study of the Mechanism of Oxidation of Phenazine-di-N-oxide in the Presence of Isopropyl alcohol at Glassy Carbon and Single-Walled Carbon Nanotube Electrodes

International Nuclear Information System (INIS)

Kulakovskaya, S.I.; Kulikov, A.V.; Sviridova, L.N.; Stenina, E.V.

2014-01-01

Graphical abstract: - Highlights: • The mechanism of oxidation of phenazine-di-N-oxide in the presence of isopropyl alcohol was studied. • The results are explained in terms of the E 1 C 1 E 2 C 2 mechanism of the two-stage electrode process. • The total two-electron catalytic oxidation of i-PrOH in the complex with the phenazine-di-N-oxide radical cation was assumed to occur. - Abstract: The mechanism of oxidation of phenazine-di-N-oxide in the presence of isopropyl alcohol was studied by cyclic voltammetry at glassy carbon (GC) and single-walled carbon nanotubes (SWCNT) electrodes in 0.1 M LiClO 4 solutions in acetonitrile. The adsorption of phenazine-di-N-oxide at SWCNT electrode in 0.1 M LiClO 4 solution in acetonitrile was investigated by measurement of the dependence of the differential double layer capacitance of the electrode C on potential E. The effect of isopropyl alcohol on the shape of cyclic voltammograms (CVs) of phenazine-di-N-oxide and the intensity of Electron Paramagnetic Resonance (EPR) signal of its radical cation was investigated. The catalytic currents were recorded at the oxidation of phenazine-di-N-oxide at SWCNT and GC electrodes in the presence of isopropyl alcohol. The results were explained in terms of the E 1 C 1 E 2 C 2 mechanism of two-stage electrode process characterized by catalytic current recorded at the second electrode stage. The overall two-electron catalytic oxidation of isopropyl alcohol in complex with the phenazine-di-N-oxide radical cation was assumed to occur. It was shown that SWCNT electrodes can be used in the electrocatalytic oxidation of organic compounds in the presence of electrochemically generated phenazine-di-N-oxide radical cation

Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.

Science.gov (United States)

Kim, Si Joon; Jung, Joohye; Lee, Keun Woo; Yoon, Doo Hyun; Jung, Tae Soo; Dugasani, Sreekantha Reddy; Park, Sung Ha; Kim, Hyun Jae

2013-11-13

A high-sensitivity, label-free method for detecting deoxyribonucleic acid (DNA) using solution-processed oxide thin-film transistors (TFTs) was developed. Double-crossover (DX) DNA nanostructures with different concentrations of divalent Cu ion (Cu(2+)) were immobilized on an In-Ga-Zn-O (IGZO) back-channel surface, which changed the electrical performance of the IGZO TFTs. The detection mechanism of the IGZO TFT-based DNA biosensor is attributed to electron trapping and electrostatic interactions caused by negatively charged phosphate groups on the DNA backbone. Furthermore, Cu(2+) in DX DNA nanostructures generates a current path when a gate bias is applied. The direct effect on the electrical response implies that solution-processed IGZO TFTs could be used to realize low-cost and high-sensitivity DNA biosensors.

Thermochemical characteristics of La n+1Ni nO3n+1 oxides

International Nuclear Information System (INIS)

Bannikov, D.O.; Safronov, A.P.; Cherepanov, V.A.

2006-01-01

Lanthanum nickelates: La 2 NiO 4+δ , La 3 Ni 2 O 7-δ , La 4 Ni 3 O 10-δ and LaNiO 3-δ the members of Ruddlesden-Popper series La n+1 Ni n O 3n+1 were prepared using citrate route. Dissolution enthalpies of complex oxides as well as a number of subsidiary substances were measured by means of Calvet calorimeter in 1 M solution of hydrochloric acid at 25 deg. C. The dissolution scheme of complex oxides in hydrochloric acid was proposed and enthalpies of formation of the complex oxides from binary oxides were calculated considering oxygen nonstoichiometry of these substances. Enthalpies of step-by-step oxidation were evaluated. Partial enthalpy contribution of LaO layers was calculated endothermic equals to 30.9 J/mol while partial enthalpy contribution of perovskite LaNiO 3 layers was negative equals to -97.0 J/mol. Enthalpy of formation of any complex oxide of Ruddlesden-Popper series fits very well to the linear regression based on these values

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

Science.gov (United States)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors

Science.gov (United States)

Lee, Minkyung; Kim, Minho; Jo, Jeong-Wan; Park, Sung Kyu; Kim, Yong-Hoon

2018-01-01

This study offers a combinatorial approach for suppressing the persistent photo-conductance (PPC) characteristic in solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in order to achieve rapid photo-recovery. Various analyses were used to examine the photo-instability of indium-gallium-zinc-oxide (IGZO) TFTs including negative-bias-illumination-stress (NBIS) and transient photo-response behaviors. It was found that the indium ratio in metallic components had a significant impact on their PPC and photo-recovery characteristics. In particular, when the indium ratio was low (51.5%), the PPC characteristic was significantly suppressed and achieving rapid photo-recovery was possible without significantly affecting the electrical performance of AOSs. These results imply that the optimization of the indium composition ratio may allow achieving highly photo-stable and near PPC-free characteristics while maintaining high electrical performance of AOSs. It is considered that the negligible PPC behavior and rapid photo-recovery observed in IGZO TFTs with a lower indium composition are attributed to the less activation energy required for the neutralization of ionized oxygen vacancies.

Process for the reduction of competitive oxidant consuming reactions in the solution mining of a mineral

International Nuclear Information System (INIS)

Stover, D.E.

1980-01-01

The present invention relates to an improved method for the solution mining of a mineral from a subterranean formation. More specifically, the invention relates to an improved method which enhances significantly the recovery of the mineral from a subterranean formation via solution mining by reducing the oxidant consuming reactions which compete with the mineral for the oxidant injected therein

Synthesis of vanadium oxide powders by evaporative decomposition of solutions

International Nuclear Information System (INIS)

Lawton, S.A.; Theby, E.A.

1995-01-01

Powders of the vanadium oxides V 2 O 4 , V 6 O 13 , and V 2 O 5 were produced by thermal decomposition of aqueous solutions of vanadyl sulfate hydrate in atmospheres of N 2 , H 2 mixed with N 2 , or air. The composition of the oxide powder was determined by the reactor temperature and gas composition. Residual sulfur concentrations in powders produced by decomposition at 740 C were less than 1 at.%, and these powders consisted of hollow, roughly spherical aggregates of particles less than 1 microm in diameter

Second-Order Biomimicry: In Situ Oxidative Self-Processing Converts Copper(I)/Diamine Precursor into a Highly Active Aerobic Oxidation Catalyst.

Science.gov (United States)

McCann, Scott D; Lumb, Jean-Philip; Arndtsen, Bruce A; Stahl, Shannon S

2017-04-26

A homogeneous Cu-based catalyst system consisting of [Cu(MeCN) 4 ]PF 6 , N , N '-di- tert -butylethylenediamine (DBED), and p -( N , N -dimethylamino)pyridine (DMAP) mediates efficient aerobic oxidation of alcohols. Mechanistic study of this reaction shows that the catalyst undergoes an in situ oxidative self-processing step, resulting in conversion of DBED into a nitroxyl that serves as an efficient cocatalyst for aerobic alcohol oxidation. Insights into this behavior are gained from kinetic studies, which reveal an induction period at the beginning of the reaction that correlates with the oxidative self-processing step, EPR spectroscopic analysis of the catalytic reaction mixture, which shows the buildup of the organic nitroxyl species during steady state turnover, and independent synthesis of oxygenated DBED derivatives, which are shown to serve as effective cocatalysts and eliminate the induction period in the reaction. The overall mechanism bears considerable resemblance to enzymatic reactivity. Most notable is the "oxygenase"-type self-processing step that mirrors generation of catalytic cofactors in enzymes via post-translational modification of amino acid side chains. This higher-order function within a synthetic catalyst system presents new opportunities for the discovery and development of biomimetic catalysts.

Amide-N-oxide heterosynthon and amide dimer homosynthon in cocrystals of carboxamide drugs and pyridine N-oxides.

Science.gov (United States)

Babu, N Jagadeesh; Reddy, L Sreenivas; Nangia, Ashwini

2007-01-01

The carboxamide-pyridine N-oxide heterosynthon is sustained by syn(amide)N-H...O-(oxide) hydrogen bond and auxiliary (N-oxide)C-H...O(amide) interaction (Reddy, L. S.; Babu, N. J.; Nangia, A. Chem. Commun. 2006, 1369). We evaluate the scope and utility of this heterosynthon in amide-containing molecules and drugs (active pharmaceutical ingredients, APIs) with pyridine N-oxide cocrystal former molecules (CCFs). Out of 10 cocrystals in this study and 7 complexes from previous work, amide-N-oxide heterosynthon is present in 12 structures and amide dimer homosynthon occurs in 5 structures. The amide dimer is favored over amide-N-oxide synthon in cocrystals when there is competition from another H-bonding functional group, e.g., 4-hydroxybenzamide, or because of steric factors, as in carbamazepine API. The molecular organization in carbamazepine.quinoxaline N,N'-dioxide 1:1 cocrystal structure is directed by amide homodimer and anti(amide)N-H...O-(oxide) hydrogen bond. Its X-ray crystal structure matches with the third lowest energy frame calculated in Polymorph Predictor (Cerius(2), COMPASS force field). Apart from generating new and diverse supramolecular structures, hydration is controlled in one substance. 4-Picoline N-oxide deliquesces within a day, but its cocrystal with barbital does not absorb moisture at 50% RH and 30 degrees C up to four weeks. Amide-N-oxide heterosynthon has potential utility in both amide and N-oxide type drug molecules with complementary CCFs. Its occurrence probability in the Cambridge Structural Database is 87% among 27 structures without competing acceptors and 78% in 41 structures containing OH, NH, H(2)O functional groups.

Removal of Mefenamic acid from aqueous solutions by oxidative process: Optimization through experimental design and HPLC/UV analysis.

Science.gov (United States)

Colombo, Renata; Ferreira, Tanare C R; Ferreira, Renato A; Lanza, Marcos R V

2016-02-01

Mefenamic acid (MEF) is a non-steroidal anti-inflammatory drug indicated for relief of mild to moderate pain, and for the treatment of primary dysmenorrhea. The presence of MEF in raw and sewage waters has been detected worldwide at concentrations exceeding the predicted no-effect concentration. In this study, using experimental designs, different oxidative processes (H2O2, H2O2/UV, fenton and Photo-fenton) were simultaneously evaluated for MEF degradation efficiency. The influence and interaction effects of the most important variables in the oxidative process (concentration and addition mode of hydrogen peroxide, concentration and type of catalyst, pH, reaction period and presence/absence of light) were investigated. The parameters were determined based on the maximum efficiency to save time and minimize the consumption of reagents. According to the results, the photo-Fenton process is the best procedure to remove the drug from water. A reaction mixture containing 1.005 mmol L(-1) of ferrioxalate and 17.5 mmol L(-1) of hydrogen peroxide, added at the initial reaction period, pH of 6.1 and 60 min of degradation indicated the most efficient degradation, promoting 95% of MEF removal. The development and validation of a rapid and efficient qualitative and quantitative HPLC/UV methodology for detecting this pollutant in aqueous solution is also reported. The method can be applied in water quality control that is generated and/or treated in municipal or industrial wastewater treatment plants. Copyright © 2015 Elsevier Ltd. All rights reserved.

N=1 domain wall solutions of massive type II supergravity as generalized geometries

International Nuclear Information System (INIS)

Louis, J.

2006-05-01

We study N=1 domain wall solutions of type IIB supergravity compactified on a Calabi-Yau manifold in the presence of RR and NS electric and magnetic fluxes. We show that the dynamics of the scalar fields along the direction transverse to the domain wall is described by gradient flow equations controlled by a superpotential W. We then provide a geometrical interpretation of the gradient flow equations in terms of the mirror symmetric compactification of type IIA. They correspond to a set of generalized Hitchin flow equations of a manifold with SU(3) x SU(3)structure which is fibered over the direction transverse to the domain wall. (Orig.)

Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

International Nuclear Information System (INIS)

Fleetwood, D.M.; Saks, N.S.

1996-01-01

We have combined thermally stimulated-current (TSC) and capacitance endash voltage (C endash V) measurements to estimate oxide, interface, and effective border trap densities in 6 endash 23 nm thermal, N 2 O, and N 2 O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%endash 1%) in the best N 2 O and N 2 O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO 2 ) x-ray irradiation or ∼10 mC/cm 2 constant current Fowler endash Nordheim injection, effective border trap densities as high as ∼5x10 11 cm -2 are inferred from C endash V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2x10 12 cm -2 ) are inferred from combined TSC and C endash V measurements. These trapped electrons prevent conventional C endash V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N 2 O and N 2 O-nitrided oxides than for thermal oxides (∼46%±7%). (Abstract Truncated)

2-Chlorophenol Removal of Aqueous Solution Using Advanced Oxidation Processes Resulting from Iron/ Persulfate and Ultra Violet/ Persulfate

Directory of Open Access Journals (Sweden)

Shokufeh Astereki

2016-06-01

Full Text Available Background: Advanced oxidation processes are used to remove toxic aromatic compounds with low biodegradability, such as 2-chlorophenol. This study investigated the use of sulfate (SO4- and persulfate (S2O82- radicals, as one of the advanced oxidation methods, to remove 2- chlorophenol from aquatic solutions. Methods: This experimental and pilot-scale study was carried out using two chemical batch reactors; one of the reactors equipped with UV lamps and the other was on the hot plate. In iron/ persulfate (Fe/S2O82- and ultra violet/ persulfate (UV/S2O82- processes different parameters were investigated. Results: Iron, UV, the initial pH of the solution, persulfate concentration have considerable effects on the elimination of 2-chlorophenol in both processes. In both processes, the maximum elimination occurred in acidic conditions. The elimination efficiency was increased by increasing the concentration of 2-chlorophenol and UV intensity, and also by decreasing the concentration of persulfate and iron. Accordingly, in iron/ persulfate and ultra violet/ persulfate processes 2-chlorophenol was eliminated with 99.96% and 99.58% efficiencies, respectively. Conclusion: Sulfate radicals produced from activated persulfate ions with hot-Fe ion and UV radiation have significant impact on the removal of 2-chlorophenol. Therefore, the processes of Fe/S2O82- and UV/S2O82- can be regarded as good choices for industrial wastewater treatment plants operators in the future.

Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.

Science.gov (United States)

Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P H; Bedzyk, Michael J; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio

2015-03-17

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

Chemical solution deposition techniques for epitaxial growth of complex oxides

NARCIS (Netherlands)

ten Elshof, Johan E.; Koster, G.; Huijben, Mark; Rijnders, G.

2015-01-01

The chemical solution deposition (CSD) process is a wet-chemical process that is employed to fabricate a wide variety of amorphous and crystalline oxide thin films. This chapter describes the typical steps in a CSD process and their influence on the final microstructure and properties of films, and

Radiolysis of Aqueous Benzene Solutions in the Presence of Inorganic Oxides

Energy Technology Data Exchange (ETDEWEB)

Christensen, H

1964-07-15

Aqueous 0.1 N alkaline solutions of benzene have been irradiated with Co {gamma}-rays in the presence of various inorganic oxides. The addition to the solution of silica gel, copper(ll) oxide and chromium(lll) oxide did not increase the yield of phenol. When chromium(lll) oxide gel, zinc oxide or titanium dioxide were added, we obtained a 9 - 13 per cent increase, and the addition of uranium dioxide and thorium dioxide caused a 31 and 39 per cent increase respectively. The increase of the phenol yield was related to the energy absorbed by the solid, and G{sub ox} values defined in this way were calculated as follows: G{sub ZnO} = 4.0, G{sub TiO{sub 2}} = 3.7, a G{sub UO{sub 2}} = 6.4, G{sub ThO{sub 2}} = 8.0. The specific surface areas of the oxides were determined and the possibility that the increase of the phenol yield may be dependent on this quantity is discussed.

Radiolysis of Aqueous Benzene Solutions in the Presence of Inorganic Oxides

International Nuclear Information System (INIS)

Christensen, H.

1964-07-01

Aqueous 0.1 N alkaline solutions of benzene have been irradiated with Co γ-rays in the presence of various inorganic oxides. The addition to the solution of silica gel, copper(ll) oxide and chromium(lll) oxide did not increase the yield of phenol. When chromium(lll) oxide gel, zinc oxide or titanium dioxide were added, we obtained a 9 - 13 per cent increase, and the addition of uranium dioxide and thorium dioxide caused a 31 and 39 per cent increase respectively. The increase of the phenol yield was related to the energy absorbed by the solid, and G ox values defined in this way were calculated as follows: G ZnO = 4.0, G TiO 2 = 3.7, a G UO 2 = 6.4, G ThO 2 = 8.0. The specific surface areas of the oxides were determined and the possibility that the increase of the phenol yield may be dependent on this quantity is discussed

Solution based preparation of Perovskite-type oxide films and powders

Energy Technology Data Exchange (ETDEWEB)

McHale, Jr., James M. [Temple Univ., Philadelphia, PA (United States). Dept. of Chemistry

1995-04-01

Conventional solid state reactions are diffusion limited processes that require high temperatures and long reaction times to reach completion. In this work, several solution based methods were utilized to circumvent this diffusion limited reaction and achieve product formation at lower temperatures. The solution methods studied all have the common goal of trapping the homogeneity inherent in a solution and transferring this homogeneity to the solid state, thereby creating a solid atomic mixture of reactants. These atomic mixtures can yield solid state products through "diffusionless" mechanisms. The effectiveness of atomic mixtures in solid state synthesis was tested on three classes of materials, varying in complexity. A procedure was invented for obtaining the highly water soluble salt, titanyl nitrate, TiO(NO₃)₂, in crystalline form, which allowed the production of titanate materials by freeze drying. The freeze drying procedures yielded phase pure, nanocrystalline BaTiO₃ and the complete SYNROC-B phase assemblage after ten minute heat treatments at 600{degrees}C and 1100{degrees}C, respectively. Two novel methods were developed for the solution based synthesis of Ba₂YCu₃O_7-x and Bi₂Sr₂Ca₂Cu₃O₁₀. Thin and thick films of Ba₂YCu₃O_7-x and Bi₂Sr₂Ca₂u₃O₁₀ were synthesized by an atmospheric pressure, chemical vapor deposition technique. Liquid ammonia solutions of metal nitrates were atomized with a stream of N₂O and ignited with a hydrogen/oxygen torch. The resulting flame was used to coat a substrate with superconducting material. Bulk powders of Ba₂YCu₃O_7-x and Bi₂Sr₂Ca₂Cu₃O₁₀ were synthesized through a novel acetate glass method. The materials prepared were

Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Chen, Yuehua; Zhang, Mengke [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Zhang, Xinwen, E-mail: iamxwzhang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lai, Wenyong, E-mail: iamwylai@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Huang, Wei [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

2017-06-15

Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

International Nuclear Information System (INIS)

Chen, Yuehua; Zhang, Mengke; Zhang, Xinwen; Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli; Lai, Wenyong; Huang, Wei

2017-01-01

Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

Science.gov (United States)

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

Electrochemical advanced oxidation processes: today and tomorrow. A review.

Science.gov (United States)

Sirés, Ignasi; Brillas, Enric; Oturan, Mehmet A; Rodrigo, Manuel A; Panizza, Marco

2014-01-01

In recent years, new advanced oxidation processes based on the electrochemical technology, the so-called electrochemical advanced oxidation processes (EAOPs), have been developed for the prevention and remediation of environmental pollution, especially focusing on water streams. These methods are based on the electrochemical generation of a very powerful oxidizing agent, such as the hydroxyl radical ((•)OH) in solution, which is then able to destroy organics up to their mineralization. EAOPs include heterogeneous processes like anodic oxidation and photoelectrocatalysis methods, in which (•)OH are generated at the anode surface either electrochemically or photochemically, and homogeneous processes like electro-Fenton, photoelectro-Fenton, and sonoelectrolysis, in which (•)OH are produced in the bulk solution. This paper presents a general overview of the application of EAOPs on the removal of aqueous organic pollutants, first reviewing the most recent works and then looking to the future. A global perspective on the fundamentals and experimental setups is offered, and laboratory-scale and pilot-scale experiments are examined and discussed.

Solution-processed inorganic copper(I) thiocyanate (CuSCN) hole transporting layers for efficient p–i–n perovskite solar cells

KAUST Repository

Zhao, Kui; Munir, Rahim; Yan, Buyi; Yang, Yang; Kim, Taesoo; Amassian, Aram

2015-01-01

CuSCN is a highly transparent, highly stable, low cost and easy to solution process HTL that is proposed as a low cost replacement to existing organic and inorganic metal oxide hole transporting materials. Here, we demonstrate hybrid organic

New Poisson–Boltzmann type equations: one-dimensional solutions

International Nuclear Information System (INIS)

Lee, Chiun-Chang; Lee, Hijin; Hyon, YunKyong; Lin, Tai-Chia; Liu, Chun

2011-01-01

The Poisson–Boltzmann (PB) equation is conventionally used to model the equilibrium of bulk ionic species in different media and solvents. In this paper we study a new Poisson–Boltzmann type (PB n ) equation with a small dielectric parameter ε 2 and non-local nonlinearity which takes into consideration the preservation of the total amount of each individual ion. This equation can be derived from the original Poisson–Nernst–Planck system. Under Robin-type boundary conditions with various coefficient scales, we demonstrate the asymptotic behaviours of one-dimensional solutions of PB n equations as the parameter ε approaches zero. In particular, we show that in case of electroneutrality, i.e. α = β, solutions of 1D PB n equations have a similar asymptotic behaviour as those of 1D PB equations. However, as α ≠ β (non-electroneutrality), solutions of 1D PB n equations may have blow-up behaviour which cannot be found in 1D PB equations. Such a difference between 1D PB and PB n equations can also be verified by numerical simulations

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Reduction of n-3 PUFAs, specifically DHA and EPA, and enhancement of peroxisomal beta-oxidation in type 2 diabetic rat heart

Directory of Open Access Journals (Sweden)

Hou Lianguo

2012-10-01

Full Text Available Abstract Background There is overwhelming evidence that dietary supplementation with n-3 polyunsaturated fatty acids (PUFAs, mainly EPA (C20:5n-3 and DHA (C22:6n-3, has cardiovascular protective effects on patients with type 2 diabetes mellitus (T2DM but not on healthy people. Because the T2DM heart increases fatty acid oxidation (FAO to compensate for the diminished utilization of glucose, we hypothesize that T2DM hearts consume more n-3 PUFAs and, therefore, need more n-3 PUFAs. In the present study, we investigated the changes in cardiac n-3 PUFAs and peroxisomal beta-oxidation, which are responsible for the degradation of PUFAs in a high-fat diet (HFD and low-dose streptozotocin- (STZ induced type 2 diabetic rat model. Methods and results The capillary gas chromatography results showed that all the n-3 (or omega-3 PUFAs, especially DHA (~50% and EPA (~100%, were significantly decreased, and the n-6/n-3 ratio (~115% was significantly increased in the hearts of diabetic rats. The activity of peroxisomal beta-oxidation, which is crucial to very-long-chain and unsaturated FA metabolism (including DHA, was significantly elevated in DM hearts. Additionally, the real-time PCR results showed that the mRNA expression of most peroxisomal beta-oxidation key enzymes were up-regulated in T2DM rat hearts, which might contribute to the reduction of n-3 (or omega-3 PUFAs. Conclusion In conclusion, our results indicate that T2DM hearts consume more n-3 PUFAs, especially DHA and EPA, due to exaggerated peroxisomal beta-oxidation.

P -type transparent conducting oxides

International Nuclear Information System (INIS)

Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

2016-01-01

Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

International Nuclear Information System (INIS)

Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

2014-01-01

Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C 61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

Potassium-doped n-type bilayer graphene

Science.gov (United States)

Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

2018-01-01

Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

Development studies for a novel wet oxidation process

International Nuclear Information System (INIS)

Dhooge, P.M.; Hakim, L.B.

1994-01-01

A catalytic wet oxidation process (DETOX), which uses an acidic iron solution to oxidize organic compounds to carbon dioxide, water, and other simple products, was investigated as a potential method for the treatment of multicomponent hazardous and mixed wastes. The organic compounds picric acid, poly(vinyl chloride), tetrachlorothiophene, pentachloropyridine, Aroclor 1260 (a polychlorinated biphenyl), and hexachlorobenzene were oxidized in 125 ml reaction vessels. The metals arsenic, barium, beryllium, cadmium, cerium (as a surrogate for plutonium), chromium, lead, mercury, neodymium (as a surrogate for uranium), nickel, and vanadium were tested in the DETOX solution. Barium, beryllium, cerium, chromium, mercury, neodymium, nickel, and vanadium were all found to be very soluble (>100 g/l) in the DETOX chloride-based solution. Arsenic, barium, cadmium, and lead solubilities were lower. Lead could be selectively precipitated from the DETOX solution. Chromium(VI) was reduced to relatively non-toxic chromium(III) by the solution. Six soils were contaminated with arsenic, barium, beryllium, chromium, lead, and neodymium oxides at approximately 0.1% by weight, and benzene, trichloroethene, mineral oil, and Aroclor 1260 at approximately 5% by weight total, and 5.g amounts treated with the DETOX solution in unstirred 125. ml reaction bombs. It is felt that soil treatment in a properly designed system is entirely possible despite incomplete oxidation of the less volatile organic materials in these unstirred tests

Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism

Energy Technology Data Exchange (ETDEWEB)

Ulin, V. P.; Ulin, N. V.; Soldatenkov, F. Yu., E-mail: f.soldatenkov@mail.ioffe.ru [Ioffe Physical–Technical Institute (Russian Federation)

2017-04-15

The interaction of heavily doped p- and n-type Si crystals with hydrofluoric acid in the dark with and without contact with metals having greatly differing work functions (Ag and Pd) is studied. The dependences of the dissolution rates of Si crystals in HF solutions that contain oxidizing agents with different redox potentials (FeCl{sub 3}, V{sub 2}O{sub 5} and CrO{sub 3}) on the type and level of silicon doping are determined. Analysis of the experimental data suggests that valence-band holes in silicon are not directly involved in the anodic reactions of silicon oxidation and dissolution and their generation in crystals does not limit the rate of these processes. It is also shown that the character and rate of the chemical process leading to silicon dissolution in HF-containing electrolytes are determined by the interfacial potential attained at the semiconductor–electrolyte interface. The mechanism of electrochemical pore formation in silicon crystals is discussed in terms of selfconsistent cooperative reactions of nucleophilic substitution between chemisorbed fluorine anions and coordination- saturated silicon atoms in the crystal subsurface layer. A specific feature of these reactions for silicon crystals is that vacant nonbonding d{sup 2}sp{sup 3} orbitals of Si atoms, associated with sixfold degenerate states corresponding to the Δ valley of the conduction band, are involved in the formation of intermediate complexes. According to the suggested model, the pore-formation process spontaneously develops in local regions of the interface under the action of the interfacial potential in the adsorption layer and occurs as a result of the detachment of (SiF{sub 2}){sub n} polymer chains from the crystal. Just this process leads to the preferential propagation of pores along the <100> crystallographic directions. The thermodynamic aspects of pore nucleation and the effect of the potential drop across the interface, conduction type, and free-carrier concentration

Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

Science.gov (United States)

Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

2016-08-31

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

Removal of 4-Chlorophenol from Aqueous Solutions Using Graphene Oxide Nanoporous Adsorbent

Directory of Open Access Journals (Sweden)

akbar eslami

2015-03-01

Full Text Available In this study, graphene oxide was used as a nanostructured adsorbent with properties supposedly better than other common adsorbents to remove 4-chlorophenol from aqueous solutions. For this purpose, graphene oxide was initially synthesized using the Hummer's method and x-ray diffraction and scanning electron microscopy were employed to identify its morphology and structure. The variables involved in the absorption process (including 4-chlorophenol initial concentration, adsorbent dosage, and pH were investigated based on the one-factor-at-a-time method. Eventually, the data were confirmed against the Langmuir and Freundlich isotherms. It was found that the adsorption process reached equilibrium in 20 minutes. A dosage of 0.4 g/L graphene oxide at pH=8 brought about 90% removal of 10 mg/L 4-chlorophenol within 5 minutes. The adsorption isotherm was described well by the Langmuir isotherm model and the values for R2 and RL were recorded as 0.99 for and 0.34, respectively. Being a low cost and highly efficient process, the adsorption process using graphene oxide adsorbent may be recommended for the reduction and elimination of pollutants in the environment, especially those in aqueous solutions.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

Science.gov (United States)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-01

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

Science.gov (United States)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-20

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Semiconducting properties of oxide films formed onto an Nb electrode in NaOH solutions

Directory of Open Access Journals (Sweden)

VLADIMIR D. JOVIC

2008-03-01

Full Text Available In this paper, the results of the potentiostatic formation of homogeneous and heterogeneous, nano-crystalline passive films of Nb2O5 onto an Nb electrode in NaOH solutions of different concentrations at potentials lower than 3.0 V vs. SCE are presented. The semiconducting properties of such films were investigated by EIS measurements. After fitting the EIS results by appropriate equivalent circuits, the space charge capacitance (Csc and space charge resistance (Rsc of these films were determined. The donor density (Nsc, flat band potential (Efb and thickness of the space charge layer (dsc for such oxide films were determined from the corresponding Mott–Schottky (M–S plots. It is shown that all oxide films were n-type semiconductors in a certain potential range.

Development of a process for co-conversion of Pu-U nitrate mixed solutions to mixed oxide powder using microwave heating method

International Nuclear Information System (INIS)

Koizumi, Masumichi; Ohtsuka, Katsuyuki; Ohshima, Hirofumi; Isagawa, Hiroto; Akiyama, Hideo; Todokoro, Akio; Naruki, Kaoru

1983-01-01

For the complete nuclear fuel cycle, the development of a process for the co-conversion of Pu-U nitrate mixed solutions to mixed oxide powder has been performed along the line of non-proliferation policy of nuclear materials. A new co-conversion process using a microwave heating method has been developed and successfully demonstrated with good results using the test unit with a capacity of 2 kg MOX/d. Through the experiments and engineering test operations, several important data have been obtained concerning the feasibility of the test unit, powder characteristics and homogeneity of the product, and impurity pickups during denitration process. The results of these experimental operations show that the co-conversion process using a microwave heating method has many excellent advantages, such as good powder characteristics of the product, good homogeneity of Pu-U oxide, simplicity of the process, minimum liquid waste, no possibility of changing the Pu/U ratio and stable operability of the plant. Since August 1979, plutonium nitrate solution transported from the Tokai Reprocessing Plant has been converted to mixed oxide powder which has the Pu/U ratio = 1. The products have been processed to the ATR ''FUGEN'' reloading fuel. Based on the successful development of the co-conversion process, the microwave heating direct denitration facility with a 10 kg MOX/d capacity has been constructed adjacent to the reprocessing plant. This facility will come into hot operation by the fall of this year. For future development of the microwave heating method, a continuous direct denitration, a vitrification of high active liquid waste and a solidification of the plutonium-contaminated waste are investigated in Power Reactor and Nuclear Fuel Development Corp. (author)

Enthalpies of solution of N,N,N',N'-tetramethylurea in amides, dimethylsulphoxide, and acetone at 298.15 K

International Nuclear Information System (INIS)

Ivanov, Evgeniy V.; Smirnov, Valeriy I.

2008-01-01

The enthalpies of solution Δ sol H m m were determined for N,N,N',N'-tetramethylurea in formamide, N-methylformamide, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulphoxide, and acetone. Measurements were made at 298.15 K and molalities m = (0.004 to 0.031) mol . kg -1 with a precise isoperibol ampoule-type calorimeter. Standard enthalpies of solution Δ sol H m 0 and transfer Δ tr H m 0 from one solvent to another were computed. The enthalpies of solution of the solute in the hydrogen-non-bonding media were found to be endothermic and weak depending on the nature of methylation in a solvent molecule. It was concluded that the solvent proton-donor ability and existing steric hindrances for hydrogen bonding and other intermolecular interactions play the key role in solvation of tetramethylurea

All solution processed tandem polymer solar cells based on thermocleavable materials

DEFF Research Database (Denmark)

Hagemann, Ole; Bjerring, Morten; Nielsen, Niels Chr.

2008-01-01

efficiently solved. Devices comprised a transparent front cathode based on solution processed zinc oxide nanoparticles, a large band gap active layer based on a bulk heterojunction between zinc oxide and poly(3-carboxydithiophene) (P3CT) followed by a layer of PEDOT:PSS processed from water. The second cell...... in the stack employed a zinc oxide front cathode processed on top of the PEDOT:PSS layer from an organic solvent, a low band gap active layer based on a bulk heterojunction between zinc oxide and the novel poly(carboxyterthiophene-co-diphenylthienopyrazine) (P3CTTP) followed by a layer of PEDOT:PSS again...

Recent Developments in p-Type Oxide Semiconductor Materials and Devices

KAUST Repository

Wang, Zhenwei

2016-02-16

The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

Recent Developments in p-Type Oxide Semiconductor Materials and Devices

KAUST Repository

Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

2016-01-01

The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

Soft solution synthesis and intense visible photoluminescence of lamellar zinc oxide hybrids

International Nuclear Information System (INIS)

Sağlam, Özge

2013-01-01

Graphical abstract: -- In this study, we demonstrate the synthesis of layered zinc oxide films intercalated with dodecyl sulphate ions by a simple soft solution process. The presence of potassium (K + ) and lithium (Li + ) ions in the precursor solution of layered zinc hydroxide resulted in lamellar hybrid zinc oxide films instead of layered zinc hydroxides. On the other hand, the addition of nickel phthalocyanine induces zinc hydroxide host layers which exhibit an intense blue emission. This is also promoted by K + and Li + ions

Bixbyite-type phases in the system Ta-Zr-O-N

Energy Technology Data Exchange (ETDEWEB)

Luedtke, Tobias; Orthmann, Steven; Lerch, Martin [Technische Univ. Berlin (Germany). Inst. fuer Chemie

2017-06-01

Phase-pure tantalum/zirconium oxide nitrides and nitrides were synthesized by the ammonolysis of amorphous oxide precursors. The nitrogen-rich oxide nitrides with variable anion composition and the nitride TaZrN3 crystallize in the cubic bixbyite-type structure (space group Ia3). The nitrogen content of these compounds has a significant influence on the cell parameters, the atomic positions, and the optical band gap. The results extend the already well-studied Ta-Zr-O-N system by new oxide nitrides in addition to the already known baddeleyite- and anosovite-type phases. TaZrN{sub 3} can be considered as a thermodynamically stable ternary variant of metastable Ta{sub 2}N{sub 3}.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Hyeonju Lee

2016-10-01

Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

Superlubricating graphene and graphene oxide films

Science.gov (United States)

Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

2018-02-13

A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

Production of Nitrous Oxide from Nitrite in Stable Type II Methanotrophic Enrichments.

Science.gov (United States)

Myung, Jaewook; Wang, Zhiyue; Yuan, Tong; Zhang, Ping; Van Nostrand, Joy D; Zhou, Jizhong; Criddle, Craig S

2015-09-15

The coupled aerobic-anoxic nitrous decomposition operation is a new process for wastewater treatment that removes nitrogen from wastewater and recovers energy from the nitrogen in three steps: (1) NH4(+) oxidation to NO2(-), (2) NO2(-) reduction to N2O, and (3) N2O conversion to N2 with energy production. Here, we demonstrate that type II methanotrophic enrichments can mediate step two by coupling oxidation of poly(3-hydroxybutyrate) (P3HB) to NO2(-) reduction. Enrichments grown with NH4(+) and NO2(-) were subject to alternating 48-h aerobic and anoxic periods, in which CH4 and NO2(-) were added together in a "coupled" mode of operation or separately in a "decoupled mode". Community structure was stable in both modes and dominated by Methylocystis. In the coupled mode, production of P3HB and N2O was low. In the decoupled mode, significant P3HB was produced, and oxidation of P3HB drove reduction of NO2(-) to N2O with ∼ 70% conversion for >30 cycles (120 d). In batch tests of wasted cells from the decoupled mode, N2O production rates increased at low O2 or high NO2(-) levels. The results are significant for the development of engineered processes that remove nitrogen from wastewater and for understanding of conditions that favor environmental production of N2O.

Oxidation of nitride films in aqueous solution: Correlation between surface analysis and electrochemical studies

International Nuclear Information System (INIS)

Brown, R.; Alias, M.N.

1994-01-01

Ac impedance and dc polarization tests of 304 stainless steels coated by cathodic arc plasma deposition (CAPD) titanium nitride and zirconium nitride were conducted in aqueous chloride solution. Cyclic polarization data suggested passive films were formed over the nitride coatings which are most likely hydrated titanium oxide and zirconium oxides. ESCA analysis of fresh samples and samples exposed during impedance tests indicated a layer rich in oxygen over the ZrN coating after exposure but not over TiN coating. Chemical shifts in the Zr 3d 5/2 core electrons indicate transformation from ZrN to its oxide; the shifts in Ti 2P 3/2 did not support the change from TiN to its oxide. The influence of these shifts on corrosion protection is documented

The extraction of trace amounts of tantalum(V) from different mineral acid solutions by 4-(5-nonyl) pyridine oxide and trioctylamine oxide

International Nuclear Information System (INIS)

Ejaz, M.; Carswell, D.J.

1976-01-01

Data are presented on the distribution of trace amounts of tantalum(V) between different mineral acid solutions and 0.1M solutions of N-oxides of 4-(5-nonyl) pyridine and trioctylamine. The optimal acidity is 0.01-0.5M, depending on the nature of the acid. Common anions have little effect on extraction. Possible mechanism of extraction are suggested making use of slope analysis data. Separation factors for a number of metal ions with respect to tantalum are reported for the 0.1M 4-(5-nonyl)pyridine oxide - 1M sulphuric acid extraction system. Separation from uranium(VI), thorium(IV) and a number of fission products is suggested. The conclusions are unique as follows: Amine oxides are as unique as oxygen-donor extractants in their extraction of tantalum(V) from weakly acid solutions; tantalum is almost completely extracted from weakly nitric, hydrochloric and sulphuric acid solutions by both of the amine oxides; the extraction in low acidity solutions is independent of the nature of the anion of the acids present, indicating the ability of amine oxides to extract the product of hydrolysis of hydrolysable elements. In this respect amine oxides are much better than tributyl phosphate. (T.G.)

Enhanced Electron Affinity and Exciton Confinement in Exciplex-Type Host: Power Efficient Solution-Processed Blue Phosphorescent OLEDs with Low Turn-on Voltage.

Science.gov (United States)

Ban, Xinxin; Sun, Kaiyong; Sun, Yueming; Huang, Bin; Jiang, Wei

2016-01-27

A benzimidazole/phosphine oxide hybrid 1,3,5-tris(1-(4-(diphenylphosphoryl)phenyl)-1H-benzo[d]imidazol-2-yl)benzene (TPOB) was newly designed and synthesized as the electron-transporting component to form an exciplex-type host with the conventional hole-transporting material tris(4-carbazoyl-9-ylphenyl)amine (TCTA). Because of the enhanced triplet energy and electron affinity of TPOB, the energy leakage from exciplex-state to the constituting molecule was eliminated. Using energy transfer from exciplex-state, solution-processed blue phosphorescent organic light-emitting diodes (PHOLEDs) achieved an extremely low turn-on voltage of 2.8 V and impressively high power efficiency of 22 lm W(-1). In addition, the efficiency roll-off was very small even at luminance up to 10 000 cd m(-2), which suggested the balanced charge transfer in the emission layer. This study demonstrated that molecular modulation was an effective way to develop efficient exciplex-type host for high performanced PHOLEDs.

Partial oxidation of n- and i-pentane over promoted vanadium-phosphorus oxide catalysts

Energy Technology Data Exchange (ETDEWEB)

Zazhigalov, V.A.; Mikhajluk, B.D.; Komashko, G.A. [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Fizicheskoj Khimii

1998-12-31

It is known, that the cost of raw materials for catalytic oxidation processes is about 60% of the product price. Cheap initial compounds to produce variety of products and to replace olefins and aromatic hydrocarbons are paraffins. That is why catalytic systems which could be possibly rather efficient in selective oxidation of paraffin hydrocarbons are under very close investigation now. One of such processes in n-pentane oxidation. The obtained results on n-pentane oxidation over VPO catalysts were quite encouraging in respect of possible reach high selectivity and yield of phthalic anhydride. However, in our work it was shown that the main product of n-pentane oxidation in the presence of VPO catalytic system as well as VPMeO was maleic anhydride. Some later our results were confirmed in, where to grow the selectivity towards phthalic anhydride the Co-additive was introduced. On the basis of the proposal made before on the mechanism of paraffins conversion over the vanadyl pyrophosphate surface with their activation at the first and fourth carbon atoms, we assumed possible methylmaleic (citraconic) anhydride forming at n- and i-pentane oxidation. This assumption has been recently supported by both our and other researchers` experimental results. In it was also hypothized possible mechanistic features for phthalic anhydride forming from n-pentane. The present work deals with the results of n- and i-pentane oxidation over VPO catalysts promoted with Bi, Cs, Te, Zr. (orig.)

Fenton-Like Oxidation of Malachite Green Solutions: Kinetic and Thermodynamic Study

Directory of Open Access Journals (Sweden)

Saeedeh Hashemian

2013-01-01

Full Text Available Oxidation by Fenton-like (Fe3+/H2O2 reactions is proven to be an economically feasible process for destruction of a variety of hazardous pollutants in wastewater. In this study, the degradation and mineralization of malachite green dye are reported using Fenton-like reaction. The effects of different parameters like pH of the solution, the initial concentrations of Fe3+, H2O2, and dye, temperature, and added electrolytes (Cl− and on the oxidation of the dye were investigated. Optimized condition was determined. The efficiency of 95.5% degradation of MAG after 15 minutes of reaction at pH 3 was obtained. TOC removal indicates partial and insignificant mineralization of malachite green dye. The results of experiments showed that degradation of malachite green dye in Fenton-like oxidation process can be described with a pseudo-second-order kinetic model. The thermodynamic constants of the Fenton oxidation process were evaluated. The results implied that the oxidation process was feasible, spontaneous, and endothermic. The results will be useful for designing the treatment systems of various dye-containing wastewaters.

Nitric oxide reduction and oxidation on stepped Pt[n(111)x(111)] electrodes

NARCIS (Netherlands)

Beltramo, G.L.; Koper, M.T.M.

2003-01-01

The structure sensitivity of the reduction and oxidation of saturated and subsaturated NO adlayers has been studied on a series of stepped Pt[n(111)×(111)] electrodes by cyclic and stripping voltammetry experiments in sulfuric and perchloric acid solution. In agreement with earlier experimental

Oxidation resistance of CrN/(Cr,V)N hard coatings deposited by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Panjan, P., E-mail: peter.panjan@ijs.si [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Drnovšek, A.; Kovač, J.; Gselman, P. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Bončina, T. [University of Maribor, Faculty of Mechanical Engineering, Smetanova 17, 2000 Maribor (Slovenia); Paskvale, S.; Čekada, M.; Kek Merl, D.; Panjan, M. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)

2015-09-30

In recent years vanadium-doped hard coatings have become available as possible candidates for self-lubrication at high temperatures. Their low coefficient of friction has mainly been attributed to the formation of the V{sub 2}O{sub 5} phase. However, the formation of vanadium oxides must be controlled by the out-diffusion of vanadium in order to achieve the combination of a low coefficient of friction and good mechanical properties for the protective coatings. In this work the application of a nanolayer of CrN/(Cr,V)N hard coating was proposed as a way to better control the out-diffusion of vanadium, while the topmost chromium oxide layer acts as barrier for the vanadium diffusion. However, the aim of this investigation was not only to focus on the formation of the oxide layer. Special attention was given to the oxidation process that takes place at the growth defects, where we observed a strong diffusion of vanadium taking place. The CrN/(Cr,V)N nanolayer coatings were deposited by DC unbalanced magnetron sputtering in an CC800/9 (CemeCon) industrial unit. The vanadium concentration in the (Cr,V)N layers was varied in the range 1.0–11.5 at.%. - Highlights: • Oxidation processes of CrN/(Cr,V)N nanolayers with vanadium content were investigated. • The CrN/(Cr,V)N hard layers were oxidized at high temperature in O2 atm. • The top chromium oxide layer acts as a diffusion barrier for vanadium ions during oxidation. • Important role of growth defects during the oxidation process is demonstrated.

Oxidation resistance of CrN/(Cr,V)N hard coatings deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Panjan, P.; Drnovšek, A.; Kovač, J.; Gselman, P.; Bončina, T.; Paskvale, S.; Čekada, M.; Kek Merl, D.; Panjan, M.

2015-01-01

In recent years vanadium-doped hard coatings have become available as possible candidates for self-lubrication at high temperatures. Their low coefficient of friction has mainly been attributed to the formation of the V_2O_5 phase. However, the formation of vanadium oxides must be controlled by the out-diffusion of vanadium in order to achieve the combination of a low coefficient of friction and good mechanical properties for the protective coatings. In this work the application of a nanolayer of CrN/(Cr,V)N hard coating was proposed as a way to better control the out-diffusion of vanadium, while the topmost chromium oxide layer acts as barrier for the vanadium diffusion. However, the aim of this investigation was not only to focus on the formation of the oxide layer. Special attention was given to the oxidation process that takes place at the growth defects, where we observed a strong diffusion of vanadium taking place. The CrN/(Cr,V)N nanolayer coatings were deposited by DC unbalanced magnetron sputtering in an CC800/9 (CemeCon) industrial unit. The vanadium concentration in the (Cr,V)N layers was varied in the range 1.0–11.5 at.%. - Highlights: • Oxidation processes of CrN/(Cr,V)N nanolayers with vanadium content were investigated. • The CrN/(Cr,V)N hard layers were oxidized at high temperature in O2 atm. • The top chromium oxide layer acts as a diffusion barrier for vanadium ions during oxidation. • Important role of growth defects during the oxidation process is demonstrated.

Doping process of p-type GaN nanowires: A first principle study

Science.gov (United States)

Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

2017-10-01

The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

Kinetics of Phenol Degradation in Aqueous Solution Oxidized under Low Frequency Ultrasonic Irradiation

Directory of Open Access Journals (Sweden)

Marwan Marwan

2014-06-01

Full Text Available Phenol is categorized as a refractory pollutant and its presence in water stream is strictly limited according to the government regulation. The present study investigated the degra-dation of phenol in aqueous solution by the effect of ultrasound. The process took place in a 500 ml glass reactor equipped with magnetic stirring and irradiated by low frequency (28 kHz ultrasound from a horn type probe. Ultrasonic irradiation was found to enhance oxidation rates at ambient conditions, compared to other approaches. Optimum conditions were observed at a stirring speed of 400 rpm and temperature of 30 C in acidic solution. It was revealed that the phenol degradation was the first order kinetics with respect to phenol. A low value of the activation energy 6.04 kcal/mol suggested that diffusional steps were rate determining during the phenol decomposition. It also confirmed that phenol was mostly degraded in the film region and less occurred in the bulk solution.

Research of calcium oxide hydration in calcium nitrate solutions

Directory of Open Access Journals (Sweden)

M.A. Oliynyk

2016-09-01

Full Text Available Mineral fertilizers are one of the important factors of agriculture intensification and increasing of food products quantity. The volume of fertilizers production and its domestic consumption in Ukraine indicate that nitrogen fertilizer using only comes nearer to the required number of science-based. One of the most widespread artificial fertilizers is the calcium nitrate. Aim: The aim is to study and theoretically substantiate the processes occurring in the preparation of suspensions of calcium hydroxide Са(ОН2 in solution of calcium nitrate Ca(NО32. Materials and Methods: The technical calcium oxide (quicklime DSTU BV.2.7-90-99, solutions of calcium nitrate of 15, 20, 25, 30, 35 and 40% Ca(NО32 concentrations were used in the work. The content of lime in the preparation of a suspension in the solution changed (in terms of calcium oxide CaO from 150 g/dm3 to the maximum possible. Each of these solutions saturated at 40°С in lime to maximum concentration. Suitable for use in these experiments and in the technology of calcium nitrate obtaining are considered the solutions (suspensions that within 12 hours did not lose their mobility (transportability. Results: The experimental results show that increasing of the concentration of calcium nitrate in solution within the range 15...40%, the amount of lime that you can put into the solution without loss of transportability decreases. Further increasing of lime quantity in solutions concentrations causes to its solidifying, loss of mobility (transportability. Calculations showed that in the presence of calcium nitrate the solubility of Са(ОН2 is reduced nearly by order that can lead to the formation of calcium oxide CaO the solid phase Са(ОН2 on the surface, which also can form hydrogen bonds with the components of the solution. As the probability of formation of hydrogen bonds in solutions is high, there is a possibility of formation of clusters.

Isotopic discrimination during nitrous oxide loss processes: An important piece of the N2O global atmospheric budget

International Nuclear Information System (INIS)

Rahn, T.; Wahlen, M.; Zhang Hui; Blake, G.

2002-01-01

Nitrous oxide plays an important role in greenhouse forcing and stratospheric ozone regulation. It is destructed in the stratosphere mainly by UV photolysis. Laboratory studies of N 2 O-N 2 mixtures irradiated at 193 and 207 nm reveal a significant enrichment of the residual heavy nitrous oxide isotopomers. The isotopic signatures are well described by an irreversible Rayleigh distillation process, with large enrichment factors of ε 15,18 (193 nm) = -18.4, -14.5 per mil and ε 15,18 (207 nm) = -48.7, -46.0 per mil. These results, when combined with diffusive mixing processes might help to explain the stratospheric enrichments previously observed. (author)

Electro-oxidation of methanol on copper in alkaline solution

International Nuclear Information System (INIS)

Heli, H.; Jafarian, M.; Mahjani, M.G.; Gobal, F.

2004-01-01

The electro-oxidation of methanol on copper in alkaline solutions has been studied by the methods of cyclic voltammetry, quasi-steady state polarization and chronoamperometry. It has been found that in the course of an anodic potential sweep the electro-oxidation of methanol follows the formation of Cu III and is catalysed by this species through a mediated electron transfer mechanism. The reaction also continues in the early stages of the reversed cycle until it is stopped by the prohibitively negative potentials. The process is diffusion controlled and the current-time responses follow Cottrellian behavior. The rate constants, turnover frequency, anodic transfer coefficient and the apparent activation energy of the electro-oxidation reaction are reported

A manufacturing process for a mixed-oxide type superconducting material

International Nuclear Information System (INIS)

Gendre, P.; Regnier, P.; Schmirgeld-Mignot, L.; Marquet, A.

1995-01-01

In order to produce high temperature superconducting materials such as YBaCuO and Bi 2 Sr 2 Ca Cu 2 O 8 , a process is presented which consists in an electrodeposition on a conductive substrate of successive layers made of the metallic elements composing the superconductor, with only one element in each layer; between each layer deposition, an intermediary oxide-reaction thermal treatment is carried out; a global oxidation thermal treatment is then finally conducted to produce the mixed oxide material. Narrow superconducting transitions and high critical current densities are possible. 3 refs., 4 figs

Low-temperature solution processing of palladium/palladium oxide films and their pH sensing performance.

Science.gov (United States)

Qin, Yiheng; Alam, Arif U; Pan, Si; Howlader, Matiar M R; Ghosh, Raja; Selvaganapathy, P Ravi; Wu, Yiliang; Deen, M Jamal

2016-01-01

Highly sensitive, easy-to-fabricate, and low-cost pH sensors with small dimensions are required to monitor human bodily fluids, drinking water quality and chemical/biological processes. In this study, a low-temperature, solution-based process is developed to prepare palladium/palladium oxide (Pd/PdO) thin films for pH sensing. A precursor solution for Pd is spin coated onto pre-cleaned glass substrates and annealed at low temperature to generate Pd and PdO. The percentages of PdO at the surface and in the bulk of the electrodes are correlated to their sensing performance, which was studied by using the X-ray photoelectron spectroscope. Large amounts of PdO introduced by prolonged annealing improve the electrode's sensitivity and long-term stability. Atomic force microscopy study showed that the low-temperature annealing results in a smooth electrode surface, which contributes to a fast response. Nano-voids at the electrode surfaces were observed by scanning electron microscope, indicating a reason for the long-term degradation of the pH sensitivity. Using the optimized annealing parameters of 200°C for 48 h, a linear pH response with sensitivity of 64.71±0.56 mV/pH is obtained for pH between 2 and 12. These electrodes show a response time shorter than 18 s, hysteresis less than 8 mV and stability over 60 days. High reproducibility in the sensing performance is achieved. This low-temperature solution-processed sensing electrode shows the potential for the development of pH sensing systems on flexible substrates over a large area at low cost without using vacuum equipment. Copyright © 2015 Elsevier B.V. All rights reserved.

Survey Efficiency of Ultraviolet and Zinc Oxide Process (UV/ZnO for Removal of Diazinon Pesticide from Aqueous Solution

Directory of Open Access Journals (Sweden)

Mohammad Hadi Dehghani

2015-03-01

Full Text Available The presence of persistent organic pollutants and toxics (e.g., pesticides in ground, surface, and drinking water resources combined with the inability of conventional treatment methods to remove these pollutants have led to the development of advanced oxidation processes. Nowadays, nanophotocatalyst processes are considered as clean and environmentally-friendly treatment methods that can be extensively used for removing contaminants. The objective of the present study was to determine the efficiency of the ultraviolet and zinc oxide (UV/ZnO process in the removal of diazinon pesticide from aqueous solutions. For the purposes of this study, samples were adjusted in a batch reactor at five different detention times. The pH levels used were 3, 7, and 9. Irradiation was performed using a 125 W medium-pressure mercury lamp. The diazinon concentrations of the samples were 100 and 500 µg/L and the concentrations of zinc oxide nanoparticles were 50, 100, and 150 mg/L. The highest degradation efficiency was observed at pH 7 (mean = 80.92 30.3, while the lowest was observed for pH 3 (mean 67.11 24.49. Results showed that the optimal concentration of nanoparticles (6-12 nm was 100 mg L-1.

Solution processed organic bulk heterojunction tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Albrecht, Steve; Neher, Dieter [Soft Matter Physics, University of Potsdam, D-14476 Potsdam (Germany)

2011-07-01

One of the critical issues regarding the preparation of organic tandem solar cells from solution is the central recombination contact. This contact should be highly transparent and conductive to provide high recombination currents. Moreover it should protect the 1st subcell from the solution processing of the 2nd subcell. Here, we present a systematic study of various recombination contacts in organic bulk heterojunction tandem solar cells made from blends of different polymers with PCBM. We compare solution processed recombination contacts fabricated from metal-oxides (TiO{sub 2} and ZnO) and PEDOT:PSS with evaporated recombination contacts made from thin metal layers and molybdenum-oxide. The solar cell characteristics as well as the morphology of the contacts measured by AFM and SEM are illustrated. To compare the electrical properties of the varying contacts we show measurements on single carrier devices for different contact-structures. Alongside we present the results of optical modeling of the subcells and the complete tandem device and relate these results to experimental absorption and reflection spectra of the same structures. Based on these studies, layer thicknesses were adjusted for optimum current matching and device performance.

Fabrication of birnessite-type layered manganese oxide films for super capacitors

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.K.; Dorval-Douville, G.; Favier, F. [Montpellier-2 Univ., LAMMI, UMR CNRS 5072, 34 (France)

2004-07-01

Birnessite-type layered manganese oxide films were anodically deposited at the surface of an inexpensive stainless steel. MnSO{sub 4} plating solutions were used at various potentials and for various durations. X-ray diffraction and scanning electron microscopy were used to examine the material structure and surface morphologies of obtained manganese oxide films. The capacitive characteristics and stability of these oxides were systematically investigated by means of cyclic voltammetry method in aqueous electrolytes. Deposition conditions affected the oxides structure and morphologies, and consequently greatly affected their electrochemical capacitance performance. (authors)

Building mechanism for a high open-circuit voltage in an all-solution-processed tandem polymer solar cell.

Science.gov (United States)

Kong, Jaemin; Lee, Jongjin; Kim, Geunjin; Kang, Hongkyu; Choi, Youna; Lee, Kwanghee

2012-08-14

Additional post-processing techniques, such as post-thermal annealing and UV illumination, were found to be required to obtain desirable values of the cell parameters in a tandem polymer solar cell incorporated with solution-processed basic n-type titanium sub-oxide (TiO(x))/acidic p-type poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) interlayers. Subsequent to the fabrication of the tandem polymer solar cells, the open-circuit voltage (V(OC)) of the cells exhibited half of the expected value. Only after the application of the post-treatments, the V(OC) of a tandem cell increased from the initial half-cell value (∼0.6 V) to its full-cell value (∼1.2 V). The selective light-biased incident photon-to-current efficiency (IPCE) measurements indicated that the initial V(OC) originated from the back subcell and that the application of the post-processing treatments revived the front subcell, such that the net photocurrent of the tandem cell was finally governed by a recombination process of holes from the back subcell and electrons from the front subcell. Based on our experimental results, we suggest that a V(OC) enhancement could be ascribed to two types of subsequent junction formations at the interface between the TiO(x) and PEDOT:PSS interlayers: an 'ion-mediated dipole junction', resulting from the electro-kinetic migration of cationic ions in the interlayers during post-thermal annealing in the presence of a low-work-function metal cathode, and a 'photoinduced Schottky junction', formed by increasing the charge carrier density in the n-type TiO(x) interlayer during UV illumination process. The two junctions separately contributed to the formation of a recombination junction through which the electrons in TiO(x) and the holes in PEDOT:PSS were able to recombine without substantial voltage drops.

Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance

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Seung Ki Baek

2013-01-01

Full Text Available Oxide p-n heterojunction devices consisting of p-Cu2O/n-ZnO nanowires were fabricated on ITO/glass substrates and their photovoltaic performances were investigated. The vertically arrayed ZnO nanowires were grown by metal organic chemical vapor deposition, which was followed by the electrodeposition of the p-type Cu2O layer. Prior to the fabrication of solar cells, the effect of bath pH on properties of the absorber layers was studied to determine the optimal condition of the Cu2O electrodeposition process. With the constant pH 11 solution, the Cu2O layer preferred the (111 orientation, which gave low electrical resistivity and high optical absorption. The Cu2O (pH 11/ZnO nanowire-based solar cell exhibited a higher conversion efficiency of 0.27% than the planar structure solar cell (0.13%, because of the effective charge collection in the long wavelength region and because of the enhanced junction area.

Stabilization of polymer solutions in the presence of oxidizing agents

Energy Technology Data Exchange (ETDEWEB)

Mendez, A; Serino, A; Jenkins, D; Lichaa, P M

1974-01-01

Many investigators in the field of heavy oil recovery techniques have confirmed the recovery efficiency which, in the miscible displacement method, has utilized polymer solutions as additives to the injection fluids. The viscosity increase of the displacing phase has lowered the mobility ratio with a significant improvement in the sweep efficiency. Recently, others have reported a notable improvement in the recovery of heavy crude by this same method of miscible displacement which causes a mobile fluid bank between the crude and the displacing fluid. There is an intervening oxidation reaction, promoting the in situ formation of surface-active agents on the interface of these 2 fluids. This study describes the effect on degradation of polymer solutions by such oxidizing agents as potassium chromate and potassium permanganate. The degradation of any polymer solution with or without additives is increased materially by an increase in temperature. The presence of NaCl brine is not often of any great significance in the time of gelation, especially with polymers of the polysaccharide type. (18 refs.)

The stability of amitriptyline N-oxide and clozapine N-oxide on treated and untreated dry blood spot cards.

Science.gov (United States)

Temesi, David; Swales, John; Keene, Warren; Dick, Samuel

2013-03-25

Procedures for drug monitoring based on Dried Blood Spot (DBS) sampling are gaining acceptance for an increasing number of clinical and preclinical applications, where ease of use, small sample requirement, and improved sample stability have been shown to offer advantages over blood tube sampling. However, to-date, the vast majority of this work has described the analysis of well characterized drugs. Using amitriptyline, clozapine, and their potentially labile N-oxide metabolites as model compounds, we consider the merits of using DBS for discovery pharmacokinetic (PK) studies where the metabolic fate of test compounds are often unknown. Both N-oxide metabolites reverted to parent compound under standard drying (2hr) and extraction conditions. Card type significantly affected the outcome, with 14% and 22% degradation occurring for clozapine-N-oxide and amitriptyline-N-oxide on a brand of untreated DBS cards, compared to 59 and 88% on a brand of treated DBS cards. Enrichment of the parent compound ex vivo leads to overestimation of circulating blood concentration and inaccurate determination of the PK profile. Copyright © 2012 Elsevier B.V. All rights reserved.

Work function tuning of tin-doped indium oxide electrodes with solution-processed lithium fluoride

Energy Technology Data Exchange (ETDEWEB)

Ow-Yang, C.W., E-mail: cleva@sabanciuniv.edu [Materials Science and Engineering Program, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Nanotechnology Application Center, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Jia, J. [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Aytun, T. [Materials Science and Engineering Program, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Zamboni, M.; Turak, A. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L8 (Canada); Saritas, K. [Materials Science and Engineering Program, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Shigesato, Y. [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

2014-05-30

Solution-processed lithium fluoride (sol-LiF) nanoparticles synthesized in polymeric micelle nanoreactors enabled tuning of the surface work function of tin-doped indium oxide (ITO) films. The micelle reactors provided the means for controlling surface coverage by progressively building up the interlayer through alternating deposition and plasma etch removal of the polymer. In order to determine the surface coverage and average interparticle distance, spatial point pattern analysis was applied to scanning electron microscope images of the nanoparticle dispersions. The work function of the sol-LiF modified ITO, obtained from photoelectron emission yield spectroscopy analysis, was shown to increase with surface coverage of the sol-LiF particles, suggesting a lateral depolarization effect. Analysis of the photoelectron emission energy distribution in the near threshold region revealed the contribution of surface states for surface coverage in excess of 14.1%. Optimization of the interfacial barrier was achieved through contributions from both work function modification and surface states. - Highlights: • Work function of indium tin oxide increased with LiF nanoparticle coverage. • Work function was analyzed via photoelectron emission yield (PEYS). • At higher surface coverage, the energy distribution of PEYS increased. • Pre-threshold increase in PEYS consistent with emission from surface states.

Aqueous polyethylene oxide solutions

International Nuclear Information System (INIS)

Breen, J.

1987-01-01

A number of aspects concerning the reorientation of polymer, water and ion hydration complexes have been studied in aqueous solution of polyethylene oxide (PEO). The polymer dynamics are investigated by 1 H-PEO and 13 C-PEO nuclear relaxation experiments. 162 refs.; 30 figs.; 19 tabs

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.

2012-06-22

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Synthesis of titanium oxide nanoparticles using DNA-complex as template for solution-processable hybrid dielectric composites

Energy Technology Data Exchange (ETDEWEB)

Ramos, J.C. [Center for Sustainable Materials Chemistry, 153 Gilbert Hall, Oregon State University, Corvallis, OR (United States); Mejia, I.; Murphy, J.; Quevedo, M. [Department of Materials Science and Engineering, University of Texas at Dallas, Dallas, TX (United States); Garcia, P.; Martinez, C.A. [Engineering and Technology Institute, Autonomous University of Ciudad Juarez, Ciudad Juarez, Chihuahua (Mexico)

2015-09-15

Highlights: • We developed a synthesis method to produce TiO{sub 2} nanoparticles using a DNA complex. • The nanoparticles were anatase phase (~6 nm diameter), and stable in alcohols. • Composites showed a k of 13.4, 4.6 times larger than the k of polycarbonate. • Maximum processing temperature was 90 °C. • Low temperature enables their use in low-voltage, low-cost, flexible electronics. - Abstract: We report the synthesis of TiO{sub 2} nanoparticles prepared by the hydrolysis of titanium isopropoxide (TTIP) in the presence of a DNA complex for solution processable dielectric composites. The nanoparticles were incorporated as fillers in polycarbonate at low concentrations (1.5, 5 and 7 wt%) to produce hybrid dielectric films with dielectric constant higher than thermally grown silicon oxide. It was found that the DNA complex plays an important role as capping agent in the formation and suspension stability of nanocrystalline anatase phase TiO{sub 2} at room temperature with uniform size (∼6 nm) and narrow distribution. The effective dielectric constant of spin-cast polycarbonate thin-films increased from 2.84 to 13.43 with the incorporation of TiO{sub 2} nanoparticles into the polymer host. These composites can be solution processed with a maximum temperature of 90 °C and could be potential candidates for its application in low-cost macro-electronics.

Metal-Free α-C(sp3–H Functionalized Oxidative Cyclization of Tertiary N,N-Diaryl Amino Alcohols: Theoretical Approach for Mechanistic Pathway

Directory of Open Access Journals (Sweden)

Zakir Ullah

2017-03-01

Full Text Available The mechanistic pathway of TEMPO/I2-mediated oxidative cyclization of N,N-diaryl amino alcohols 1 was investigated. Based on direct empirical experiments, three key intermediates (aminium radical cation 3, α-aminoalkyl radical 4, and iminium 5, four types of reactive species (radical TEMPO, cationic TEMPO, TEMPO-I, and iodo radical, and three types of pathways ((1 SET/PCET mechanism; (2 HAT/1,6-H transfer mechanism; (3 ionic mechanism were assumed. Under the assumption, nine free energy diagrams were acquired through density functional theory calculations. From the comparison of solution-phase free energy, some possible mechanisms were excluded, and then the chosen plausible mechanisms were concretized using the more stable intermediate 7.

Degradation of di-2-ethylhexyl phthalate in aqueous solution by advanced oxidation process

Directory of Open Access Journals (Sweden)

Maryam Zarean

2015-01-01

Conclusion: It could be found that the UV/O3 process is a method for DEHP degradation in aqueous solution and may be recommended as a supplement with other processes for treatment of solutions containing low DEHP concentrations.

Investigations on the oxidation of nitric acid plutonium solutions with ozone

International Nuclear Information System (INIS)

Boehm, M.

1983-01-01

The reaction of ozone with nitric acid Pu solutions was studied as a function of reaction time, acid concentration and Pu concentration. Strong nitric acid Pu solutions are important in nuclear fuel element production and reprocessing. The Pu must be converted into hexavalent Pu before precipitation from the homogeneous solution together with uranium-IV, ammonia and CO 2 in the form of ammonium uranyl/plutonyl carbonate (AUPuC). Formation of a solid phase during ozonation was observed for the first time. The proneness to solidification increases with incrasing plutonium concentrations and with decreasing acid concentrations. If the formation of a solid phase during ozonation of nitric acid Pu solutions cannot be prevented, the PU-IV oxidation process described is unsuitable for industrial purposes as Pu solutions in industrial processes have much higher concentrations than the solutions used in the present investigation. (orig./EF) [de

Evaluation of Efficacy of Advanced Oxidation Processes Fenton, Fenton-like and Photo-Fenton for Removal of Phenol from Aqueous Solutions

International Nuclear Information System (INIS)

Mofrad, M. R.; Akbari, H.; Miranzadeh, M. B.; Nezhad, M. E.; Atharizade, M.

2015-01-01

Contamination of water, soil and groundwater caused by aromatic compounds induces great concern in most world areas. Among organic pollutants, phenol is mostly considered dangerous due to its high toxicity for human and animal. Advanced oxidation processes (AOPs) is considered as a most efficient method also the best one for purifying organic compounds which are resistant to conventional physical and chemical processes. This experimental study was carried out in laboratory scale. First, a synthetic solution was made of phenol. Then, Fenton, Fenton-like and photo-Fenton processes were applied removing phenol from aquatic solution. The effects of Hydrogen Peroxide concentration, catalyst, pH and time were studied to phenol removal efficiency. Results showed that Photo-Fenton process with removal efficiency (97.5 percentage) is more efficient than Fenton and Fenton-like processes with removal efficiency (78.7 percentage and 82.5 percentage respectively), in pH=3, (H/sub 2/O/sub 2/)= 3mM, (Fe2+)= 0.1 mM, phenol concentration 100 mg L-1 and time reaction 60 min, the phenol removal was 97.5 percentage. (author)

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

International Nuclear Information System (INIS)

Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

2008-01-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

2008-06-21

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

Radiation-chemical oxidation of neptunium in perchloric acid solutions

International Nuclear Information System (INIS)

Shilov, V.P.; Gusev, Yu.K.; Pikaev, A.K.; Stepanova, E.S.; Krot, N.N.

1979-01-01

The γ-radiation effect (at a dose rate of 5x10 16 eV/mlxs) on 1x10 -3 Np(6) and Np(5) perchloric acid solutions is studied. The output of Np(6) loss in aerated 0.001-0.005M HClO 4 solutions was 2.4 ions/100 eV. The output of Np(5) loss in solutions saturated with nitrous oxide was 2.1 ions/100 eV at pH-4. In aerated 0.1-1.0 M HClO 4 solutions in presence of XeO 4 the output of Np(5) loss grows from 6.6 to 13.5 ions/100 eV as (XeO 3 ) 0 increases from 1x10 -3 to 2x10 -2 M. Possible process mechanisms have been proposed

Oxidative desulfurization of Cayirhan lignites by permanganate solution

Energy Technology Data Exchange (ETDEWEB)

Guru, M.; Tuzun, F.N.; Murathan, A.S.; Asan, A.; Kiyak, T. [Gazi University, Ankara (Turkey). Dept. for Chemical Engineering

2008-07-01

Unless important developments record new and renewable energy sources, the role of fossil fuels as an energy resource goes on. It is possible to detect sulfur, heavy metals, and tracer elements such as arsenic and selenium by decreasing calorific value of coals. Sulfur oxides, which are the main pollutants in atmosphere, are irritative to humans and plants, and erosion occurs on buildings. Although there are high lignite reservoirs, high sulfur content limits the efficient use of them. In this research, it is aimed to convert combustible sulfur in coal to non-combustible sulfur form in the ash by oxidizing it with permanganate solution. During this research, the effect of two different parameters of potassium permanganate concentration, processing time, and mean particle size were investigated at constant room temperature and shaking rate. The conversion of combustible sulfur to non-combustible sulfur form was achieved optimally with 0.14 M potassium permanganate solution, 0.1 mm mean particle size at 16 h of treatment time, and the combustible sulfur amount was decreased by 46.37% compared to undoped conditions.

Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity

International Nuclear Information System (INIS)

Kostis, I; Vasilopoulou, M; Giannakopoulos, K; Papadimitropoulos, G; Davazoglou, D; Michalas, L; Papaioannou, G; Konofaos, N; Iliadis, A A; Kennou, S

2012-01-01

Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40 eV and the grain boundaries barrier at 150 meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14 cm -3 was estimated.

Solution-processed high-LUMO-level polymers in n-type organic field-effect transistors: a comparative study as a semiconducting layer, dielectric layer, or charge injection layer

International Nuclear Information System (INIS)

Liu, Chuan; Xu, Yong; Liu, Xuying; Minari, Takeo; Sirringhaus, Henning; Noh, Yong-Young

2015-01-01

In solution-processed organic field-effect transistors (OFETs), the polymers with high level of lowest unoccupied molecular orbitals (LUMOs, > −3.5 eV) are especially susceptible to electron-trapping that causes low electron mobility and strong instability in successive operation. However, the role of high-LUMO-level polymers could be different depending on their locations relative to the semiconductor/insulator interface, or could even possibly benefit the device in some cases. We constructed unconventional polymer heterojunction n-type OFETs to control the location of the same polymer with a high LUMO level, to be in, under, or above the accumulation channel. We found that although the devices with the polymer in the channel suffer from dramatic instability, the same polymer causes much less instability when it acts as a dielectric modification layer or charge injection layer. Especially, it may even improve the device performance in the latter case. This result helps to improve our understanding of the electron-trapping and explore the value of these polymers in OFETs. (invited article)

Oxidative destruction of ammonia for restoration of uranium solution mining sites

International Nuclear Information System (INIS)

Humenick, M.J.; Garwacka, K.

1984-01-01

A laboratory experimental research project was conducted to evaluate the use of chlorine for the oxidative destruction of residual ammonia that may remain in ground water after in-situ uranium solution mining operations. The work tested the idea of injecting high strength calcium hypochlorite solution into the mining zone to convert ammonia to nitrogen gas as a final cleanup process for ammonia removal from the ground water system. This paper details ammonia removal efficiency as a function of chlorine dose, reactant, and product material balances, and how the concept may be used as a final ground water restoration process

Oxidative destruction of ammonia for restoration of uranium solution mining sites

Energy Technology Data Exchange (ETDEWEB)

Humenick, M.J.; Garwacka, K.

1984-02-01

A laboratory experimental research project was conducted to evaluate the use of chlorine for the oxidative destruction of residual ammonia that may remain in ground water after in-situ uranium solution mining operations. The work tested the idea of injecting high strength calcium hypochlorite solution into the mining zone to convert ammonia to nitrogen gas as a final cleanup process for ammonia removal from the ground water system. This paper details ammonia removal efficiency as a function of chlorine dose, reactant, and product material balances, and how the concept may be used as a final ground water restoration process.

Oxidative destruction of ammonia for restoration of uranium solution mining sites

Energy Technology Data Exchange (ETDEWEB)

Humenick, M.J.; Garwacka, K.

1984-01-01

A laboratory experimental research project was conducted to evaluate the use of chlorine for the oxidative destruction of residual ammonia that may remain in ground water after in-situ uranium solution mining operations. The work tested the idea of injecting high strength calcium hypochlorite solution into the mining zone to convert ammonia to nitrogen gas as a final cleanup process for ammonia removal from the ground water system. This paper details ammonia removal efficiency as a function of chlorine dose, reactant, and product material balances, and how the concept may be used as a final ground water restoration process.

The mechanisms of pyrite oxidation and leaching: A fundamental perspective

Science.gov (United States)

Chandra, A. P.; Gerson, A. R.

2010-09-01

Pyrite is the earth's most abundant sulfide mineral. Its frequent undesirable association with minerals of economic value such as sphalerite, chalcopyrite and galena, and precious metals such as gold necessitates costly separation processes such as leaching and flotation. Additionally pyrite oxidation is a major contributor to the environmental problem of acid rock drainage. The surface oxidation reactions of pyrite are therefore important both economically and environmentally. Significant variations in electrical properties resulting from lattice substitution of minor and trace elements into the lattice structure exist between pyrite from different geographical locations. Furthermore the presence of low coordination surface sites as a result of conchoidal fracture causes a reduction in the band gap at the surface compared to the bulk thus adding further electrochemical variability. Given the now general acceptance after decades of research that electrochemistry dominates the oxidation process, the geographical location, elemental composition and semi-conductor type (n or p) of pyrite are important considerations. Aqueous pyrite oxidation results in the production of sulfate and ferrous iron. However other products such as elemental sulfur, polysulfides, hydrogen sulfide, ferric hydroxide, iron oxide and iron(III) oxyhydroxide may also form. Intermediate species such as thiosulfate, sulfite and polythionates are also proposed to occur. Oxidation and leach rates are generally influenced by solution Eh, pH, oxidant type and concentration, hydrodynamics, grain size and surface area in relation to solution volume, temperature and pressure. Of these, solution Eh is most critical as expected for an electrochemically controlled process, and directly correlates with surface area normalised rates. Studies using mixed mineral systems further indicate the importance of electrochemical processes during the oxidation process. Spatially resolved surface characterisation of fresh

Simulation of the selective oxidation process of semiconductors

International Nuclear Information System (INIS)

Chahoud, M.

2012-01-01

A new approach to simulate the selective oxidation of semiconductors is presented. This approach is based on the so-called b lack box simulation method . This method is usually used to simulate complex processes. The chemical and physical details within the process are not considered. Only the input and output data of the process are relevant for the simulation. A virtual function linking the input and output data has to be found. In the case of selective oxidation the input data are the mask geometry and the oxidation duration whereas the output data are the oxidation thickness distribution. The virtual function is determined as four virtual diffusion processes between the masked und non-masked areas. Each process delivers one part of the oxidation profile. The method is applied successfully on the oxidation system silicon-silicon nitride (Si-Si 3 N 4 ). The fitting parameters are determined through comparison of experimental and simulation results two-dimensionally.(author)

Oxygen vacancies: The origin of n -type conductivity in ZnO

Science.gov (United States)

Liu, Lishu; Mei, Zengxia; Tang, Aihua; Azarov, Alexander; Kuznetsov, Andrej; Xue, Qi-Kun; Du, Xiaolong

2016-06-01

Oxygen vacancy (VO) is a common native point defect that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n -type conductivity in ZnO has been still unsettled in the past 50 years. Here, we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n -type conductivity as well as the nonstoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.

Fenton oxidative decolorization of the azo dye Direct Blue 15 in aqueous solution

DEFF Research Database (Denmark)

Sun, Jian-Hui; Shi, Shao-Hui; Lee, Yi-Fan

2009-01-01

In this paper, the application of Fenton oxidation process for the decolorization of an azo dye Direct Blue 15 (DB15) in aqueous solution was investigated. The effect of initial pH, dosage of H2O2, H2O2/Fe2+ and H2O2/dye ratios and the reaction temperature on the decolorization efficiency...... = 60: 1 and temperature = 30 degrees C. Under the optimal conditions, 4.7 x 10(-5) mol/L of the DB15 aqueous solution can be completely decolorized by Fenton oxidation within 50-min reaction time and the decolorization kinetic rate constant k was determined as 0.1694 min(-1). Additionally increasing...... the reaction temperature from 20 to 40 degrees C showed a positive effect on the decolorization efficiency of DB15. The present study can provide guidance to relational industry operators and planners to effectively treat the DB15 contaminated wastewater by Fenton oxidation process. (C) 2009 Elsevier B. V. All...

Anodic oxidation of ammonia in alkaline solutions at Pt/Pt electrodes. Hakkin denkyokujo ni okeru enkisei ammonia yoeki no anodo sanka

Energy Technology Data Exchange (ETDEWEB)

Takagi, Ryoichiro; Katsuta, Masahiro; Matsumoto, Tamotsu; Kobayashi, Yoshikazu; Asami, Yusaku; Hirano, Katsuhiko (Shibaura Inst. of Tech., Tokyo (Japan))

1989-01-05

Anodic oxidation of ammonia in alkaline solutions on Pt/Pt electrode, in which NH {sub 3} is oxidized producing N {sub 2}, is a promising reaction in application to a fuel cell and water treatment. In this study, the relations between electrode potential and adsorbed intermediates, reaction process were elucidated by potentiodynamic method and potential step method. In measurement, a transient memory device and a microprocessor were connected to an electrolysis device as a new method, then measurement of electric potential and current and integral calculation were perfromed at high speed. Active sites of electrode were covered by Pt NH {sub x}. Faradic current corresponds to the N {sub 2} evolution was shown markedly by anodic scanning. The relation between electrode potential and reaction process was revealed by potential step method. It is found that Pt-NH {sub 2} is the active intermediate for the N {sub 2} evolution, and when current shows maximum, its coverage is nearly 0.5. 15 refs., 7 figs.

Investigation of Phenol Removal in Aqueous Solutions Using Advanced Photochemical Oxidation (APO

Directory of Open Access Journals (Sweden)

Naser Jamshidi

2010-01-01

Full Text Available Most organic compounds are resistant to conven­tional chemical and biological treatments. For this reason, other methods are being studied as alter­natives to the biological and classical physico-chemical pro­cesses. In this study, advanced photochemical oxidation (APO processes (UV, UV/H2O2, UV/H2O2/Fe(II, andUV/H2O2/Fe(III were investigated in lab-scale experiments for the degradation of phenol in an aqueous solution. A medium-pressure 300 watt (UV-C mercury ultraviolet lamp was used as the radiation source and H2O2 30% as the oxidant. Phenol (initial concentration= 0.5 mmol/L was selected as the model due to its high use and application. Some important parameters such as pH, H2O2 input concentration, iron catalyst concentration, the type of iron salt, and duration of UV radiation were studied based on the standard methods. The results showed that the Photo-Fenton process was the most effective treatment under acidic conditions producing a higher rate of phenol degradation over a very short radiation time. The process accelerated the oxidation rate by 4-5 times the rate of the UV/H2O2 process. The optimum conditions were obtained at a pH value of 3, with a molar ratio of 11.61 for H2O2/Phenol and molar ratios of 0.083 and 0.067for Iron/H2O2 in the UV/H2O2/Fe (II and the UV/H2O2/Fe (III systems, respectively.

Self-Functionalization Behind a Solution-Processed NiOx Film Used As Hole Transporting Layer for Efficient Perovskite Solar Cells.

Science.gov (United States)

Ciro, John; Ramírez, Daniel; Mejía Escobar, Mario Alejandro; Montoya, Juan Felipe; Mesa, Santiago; Betancur, Rafael; Jaramillo, Franklin

2017-04-12

Fabrication of solution-processed perovskite solar cells (PSCs) requires the deposition of high quality films from precursor inks. Frequently, buffer layers of PSCs are formed from dispersions of metal oxide nanoparticles (NPs). Therefore, the development of trustable methods for the preparation of stable colloidal NPs dispersions is crucial. In this work, a novel approach to form very compact semiconducting buffer layers with suitable optoelectronic properties is presented through a self-functionalization process of the nanocrystalline particles by their own amorphous phase and without adding any other inorganic or organic functionalization component or surfactant. Such interconnecting amorphous phase composed by residual nitrate, hydroxide, and sodium ions, proved to be fundamental to reach stable colloidal dispersions and contribute to assemble the separate crystalline nickel oxide NPs in the final film, resulting in a very homogeneous and compact layer. A proposed mechanism behind the great stabilization of the nanoparticles is exposed. At the end, the self-functionalized nickel oxide layer exhibited high optoelectronic properties enabling perovskite p-i-n solar cells as efficient as 16.6% demonstrating the pertinence of the presented strategy to obtain high quality buffer layers processed in solution at room temperature.

Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

Energy Technology Data Exchange (ETDEWEB)

Swain, Basudev, E-mail: Swain@iae.re.kr [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Lee, Kun-Jae [Department of Energy Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of)

2015-07-15

Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

Characterization of electrochemical and passive behaviour of Alloy 59 in acid solution

International Nuclear Information System (INIS)

Luo, Hong; Gao, Shujun; Dong, Chaofang; Li, Xiaogang

2014-01-01

Highlights: • A considerably thinner n-type passive film is observed on the Alloy-59. • The passive film formed in air was thicker than that formed in acid solution. • Primary constituents of passive film in air and acid solution are (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively. - Abstract: The electrochemical behaviour and passive film properties of the Alloy 59 in sulfuric acid solution was evaluated by the potentiodynamic electrochemical measurements, electrochemical impedance spectroscopy, Mott-Schottky approach, and ex situ surface analytical technique as X-ray photoelectron spectroscopy (XPS) and Auger Electronic Spectrometer (AES). The results confirmed that the Alloy 59 exhibits well passive behaviour. A considerably thinner n-type passive film is observed on this type alloy. Based on the evaluations of surface composition analysis, the primary constituents of passive film formed in the air and acid solution are different, with the (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively

Method for forming indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Oxidation of ascorbic acid by a (salen)ruthenium(VI) nitrido complex in aqueous solution.

Science.gov (United States)

Wang, Qian; Man, Wai-Lun; Lam, William W Y; Lau, Tai-Chu

2014-12-25

The oxidation of ascorbic acid (H2A) by [Ru(VI)(N)(L)(MeOH)](+) in aqueous acidic solutions has the following stoichiometry: 2[Ru(VI)(N)] + 3H2A → 2[Ru(III)(NH2-HA)](+) + A. Mechanisms involving HAT/N-rebound at low pH (≤2) and nucleophilic attack at the nitride at high pH (≥5) are proposed.

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

Science.gov (United States)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Oriented growth of Sr n+1Ti n O3n+1 Ruddlesden-Popper phases in chemical solution deposited thin films

International Nuclear Information System (INIS)

Gutmann, Emanuel; Levin, Alexandr A.; Reibold, Marianne; Mueller, Jan; Paufler, Peter; Meyer, Dirk C.

2006-01-01

Oriented thin films of perovskite-related Sr n +1 Ti n O 3 n +1 Ruddlesden-Popper phases (n=1, 2, 3) were grown on (001) single-crystalline SrTiO 3 substrates. Preparation of the films was carried out by wet chemical deposition from metalorganic Sr-Ti solutions (rich in Sr) and subsequent conversion into the crystalline state by thermal treatment in air atmosphere at a maximum temperature of 700 deg. C. Solutions were prepared by a modified Pechini method. The films were investigated by wide-angle X-ray scattering and high-resolution transmission electron microscopy. The phase content of powders prepared from the dried solutions and annealed under similar conditions differed from that present in the films, i.e. only polycrystalline SrTiO 3 was detected together with oxides of Ti and Sr. - Graphical abstract: Cross-sectional image of an oriented chemical solution deposited thin film obtained by high-resolution transmission electron microscopy. Periodical spacings corresponding to SrTiO 3 substrate (right) and Sr 2 TiO 4 Ruddlesden-Popper phase (n=1) film region (left) are marked

PROCESS FOR RECOVERY OF URANIUM VALUES FROM IMPURE SOLUTIONS THEREOF

Science.gov (United States)

Kilner, S.B.

1959-11-01

A process is presented for the recovery of uraninm values from impure solutions which are obtained, for example, by washing residual uranium salt or uranium metal deposits from stainless steel surfaces using an aqueous or certain acidic aqueous solutions. The solutions include uranyl and oxidized iron, chromium, nickel, and copper ions and may contain manganese, zinc, and silver ions. In accordance with one procedure. the uranyl ions are reduced to the uranous state, and the impurity ions are complexed with cyanide under acidic conditions. The solution is then treated with ammonium hydroxide or alkali metal hydroxide to precipitate uranous hydroxide away from the complexed impurity ions in the solution. Alternatively, an excess of alkali metal cyanide is added to the reduced solution until the solution becomes sufficiently alkaline for the uranons hydroxide to precipitate. An essential feature in operating the process is in maintaining the pH of the solution sufficiently acid during the complexing operation to prevent the precipitation of the impurity metal hydroxides.

Highly Selective TiN-Supported Highly Dispersed Pt Catalyst: Ultra Active toward Hydrogen Oxidation and Inactive toward Oxygen Reduction.

Science.gov (United States)

Luo, Junming; Tang, Haibo; Tian, Xinlong; Hou, Sanying; Li, Xiuhua; Du, Li; Liao, Shijun

2018-01-31

The severe dissolution of the cathode catalyst, caused by an undesired oxygen reduction reaction at the anode during startup and shutdown, is a fatal challenge to practical applications of polymer electrolyte membrane fuel cells. To address this important issue, according to the distinct structure-sensitivity between the σ-type bond in H 2 and the π-type bond in O 2 , we design a HD-Pt/TiN material by highly dispersing Pt on the TiN surface to inhibit the unwanted oxygen reduction reaction. The highly dispersed Pt/TiN catalyst exhibits excellent selectivity toward hydrogen oxidation and oxygen reduction reactions. With a Pt loading of 0.88 wt %, our catalyst shows excellent hydrogen oxidation reaction activity, close to that of commercial 20 wt % Pt/C catalyst, and much lower oxygen reduction reaction activity than the commercial 20 wt % Pt/C catalyst. The lack of well-ordered Pt facets is responsible for the excellent selectivity of the HD-Pt/TiN materials toward hydrogen oxidation and oxygen reduction reactions. Our work provides a new and cost-effective solution to design selective catalysts toward hydrogen oxidation and oxygen reduction reactions, making the strategy of using oxygen-tolerant anode catalyst to improve the stability of polymer electrolyte membrane fuel cells during startup and shutdown more affordable and practical.

AN ADVANCED OXIDATION PROCESS : FENTON PROCESS

Directory of Open Access Journals (Sweden)

Engin GÜRTEKİN

2008-03-01

Full Text Available Biological wastewater treatment is not effective treatment method if raw wastewater contains toxic and refractory organics. Advanced oxidation processes are applied before or after biological treatment for the detoxification and reclamation of this kind of wastewaters. The advanced oxidation processes are based on the formation of powerful hydroxyl radicals. Among advanced oxidation processes Fenton process is one of the most promising methods. Because application of Fenton process is simple and cost effective and also reaction occurs in a short time period. Fenton process is applied for many different proposes. In this study, Fenton process was evaluated as an advanced oxidation process in wastewater treatment.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

Science.gov (United States)

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

KAUST Repository

Faber, Hendrik

2017-04-28

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

All-Solution-Processed, Ambient Method for ITO-Free, Roll-Coated Tandem Polymer Solar Cells using Solution- Processed Metal Films

DEFF Research Database (Denmark)

Angmo, Dechan; Dam, Henrik Friis; Andersen, Thomas Rieks

2014-01-01

A solution-processed silver film is employed in the processing of top-illuminated indium-tin-oxide (ITO)-free polymer solar cells in single- and double-junction (tandem) structures. The nontransparent silver film fully covers the substrate and serves as the bottom electrode whereas a PEDOT...... in terms of surface morphological and topographical properties and to ITO in terms of flexibility. The slot–die coated Ag film demonstrates extremely low roughness (a root-meansquare roughness of 3 nm was measured over 240_320 mm2 area), is highly conductive (

Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

Science.gov (United States)

Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

2015-07-01

Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

Process for recovering uranium using an alkyl pyrophosphoric acid and alkaline stripping solution

International Nuclear Information System (INIS)

Worthington, R.E.; Magdics, A.

1987-01-01

A process is described for stripping uranium for a pregnant organic extractant comprising an alkyl pyrophosphoric acid dissolved in a substantially water-immiscible organic diluent. The organic extractant contains tetravalent uranium and an alcohol or phenol modifier in a quantity sufficient to retain substantially all the unhydrolyzed alkyl pyrophosphoric acid in solution in the diluent during stripping. The process comprises adding an oxidizing agent to the organic extractant and thereby oxidizing the tetravalent uranium to the +6 state in the organic extractant, and contacting the organic extractant containing the uranium in the +6 state with a stripping solution comprising an aqueous solution of an alkali metal or ammonium carbonate or hydroxide thereby stripping uranium from the organic extractant into the stripping solution. The resulting barren organic extractant containing substantially all of the unhydrolyzed alkyl pyrophosphoric acid dissolved in the diluent is separated from the stripping solution containing the stripped uranium, the barren extractant being suitable for recycle

Determination of hexamethylene tetramine in the process solution of sol-gel method for nuclear fuel fabrication

International Nuclear Information System (INIS)

Ganatra, V.R.; Sawant, R.M.; Chaudhuri, N.K.; Vaidya, V.N.

1998-01-01

Hexamethylene tetramine (HMTA) was determined in the presence of large quantities of urea, formaldehyde and ammonium hydroxide by potentiometric titration with perchloric acid solution using an autotitrator coupled to a personal computer. This analysis is required for the process control of the sol-gel method in the production of ceramic metal oxide (e.g., oxides and mixed oxides of Th, U and Pu) microspheres using the internal gelation route. Feed solution used for preparation of microspheres contains large quantities of urea. The washings of gel microspheres produced after the internal gelation process contain urea, formaldehyde, urea-formaldehyde complex and ammonium hydroxide. The presence of these constituents in the feed solution and washings seriously interfere in the commonly used methods for the determination of HMTA. Using this method the relative standard deviation was found to be 0.27% in eleven determinations of a typical feed solution (3.0M HMTA) when the aliquots contained 75 to 125 mg of HMTA. Time required for each titration was 5-7 minutes. Feed and effluent solutions of sol-gel process were analysed. (author)

Automation of the micro-arc oxidation process

Science.gov (United States)

Golubkov, P. E.; Pecherskaya, E. A.; Karpanin, O. V.; Shepeleva, Y. V.; Zinchenko, T. O.; Artamonov, D. V.

2017-11-01

At present the significantly increased interest in micro-arc oxidation (MAO) encourages scientists to look for the solution of the problem of this technological process controllability. To solve this problem an automated technological installation MAO was developed, its structure and control principles are presented in this article. This device will allow to provide the controlled synthesis of MAO coatings and to identify MAO process patterns which contributes to commercialization of this technology.

All-solution-processed PbS quantum dot solar modules

Science.gov (United States)

Jang, Jihoon; Shim, Hyung Cheoul; Ju, Yeonkyeong; Song, Jung Hoon; An, Hyejin; Yu, Jong-Su; Kwak, Sun-Woo; Lee, Taik-Min; Kim, Inyoung; Jeong, Sohee

2015-05-01

A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm2, exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm2 unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas.A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm2, exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm2 unit cell). Our approach affords trade

Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement

DEFF Research Database (Denmark)

Martinez, Nieves Espinosa; Dam, Henrik Friis; Tanenbaum, David M.

2011-01-01

roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V2O5·(H2O)n/Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide......The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full...... layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration...

Water-mediated interactions between trimethylamine-N-oxide and urea.

Science.gov (United States)

Hunger, Johannes; Ottosson, Niklas; Mazur, Kamila; Bonn, Mischa; Bakker, Huib J

2015-01-07

The amphiphilic osmolyte trimethylamine-N-oxide (TMAO) is commonly found in natural organisms, where it counteracts biochemical stress associated with urea in aqueous environments. Despite the important role of TMAO as osmoprotectant, the mechanism behind TMAO's action has remained elusive. Here, we study the interaction between urea, TMAO, and water in solution using broadband (100 MHz-1.6 THz) dielectric spectroscopy. We find that the previously reported tight hydrogen bonds between 3 water molecules and the hydrophilic amine oxide group of TMAO, remain intact at all investigated concentrations of urea, showing that no significant hydrogen bonding occurs between the two co-solutes. Despite the absence of direct TMAO-urea interactions, the solute reorientation times of urea and TMAO show an anomalous nonlinear increase with concentration, for ternary mixtures containing equal amounts of TMAO and urea. The nonlinear increase of the reorientation correlates with changes in the viscosity, showing that the combination of TMAO and urea cooperatively enhances the hydrogen-bond structure of the ternary solutions. This nonlinear increase is indicative of water mediated interaction between the two solutes and is not observed if urea is combined with other amphiphilic solutes.

Application of advanced oxidation processes for cleaning of industrial water generated in wet dedusting of shaft furnace gases.

Science.gov (United States)

Czaplicka, Marianna; Kurowski, Ryszard; Jaworek, Katarzyna; Bratek, Łukasz

2013-01-01

The paper presents results of studies into advanced oxidation processes in 03 and 03/UV systems. An advanced oxidation process (AOP) was conducted to reduce the load of impurities in circulating waters from wet de-dusting of shaft furnace gases. Besides inorganic impurities, i.e. mainly arsenic compounds (16 g As L(-1) on average), lead, zinc, chlorides and sulphates, the waters also contain some organic material. The organic material is composed of a complex mixture that contains, amongst others, aliphatic compounds, phenol and its derivatives, pyridine bases, including pyridine, and its derivatives. The test results show degradation of organic and inorganic compounds during ozonation and photo-oxidation processes. Analysis of the solutions from the processes demonstrated that the complex organic material in the industrial water was oxidized in ozonation and in photo-oxidation, which resulted in formation of aldehydes and carboxylic acids. Kinetic degradation of selected pollutants is presented. Obtained results indicated that the O3/UV process is more effective in degradation of organic matter than ozonation. Depending on the process type, precipitation of the solid phase was observed. The efficiency of solid-phase formation was higher in photo-oxidation with ozone. It was found that the precipitated solid phase is composed mainly of arsenic, iron and oxygen.

Immunomodulation by different types of N-oxides in the hemocytes of the marine bivalve Mytilus galloprovincialis.

Directory of Open Access Journals (Sweden)

Caterina Ciacci

Full Text Available The potential toxicity of engineered nanoparticles (NPs for humans and the environment represents an emerging issue. Since the aquatic environment represents the ultimate sink for NP deposition, the development of suitable assays is needed to evaluate the potential impact of NPs on aquatic biota. The immune system is a sensitive target for NPs, and conservation of innate immunity represents an useful basis for studying common biological responses to NPs. Suspension-feeding invertebrates, such as bivalves, are particularly at risk to NP exposure, since they have extremely developed systems for uptake of nano and microscale particles integral to intracellular digestion and cellular immunity. Evaluation of the effects of NPs on functional parameters of bivalve immunocytes, the hemocytes, may help understanding the major toxic mechanisms and modes of actions that could be relevant for different NP types in aquatic organisms.In this work, a battery of assays was applied to the hemocytes of the marine bivalve Mytilus galloprovincialis to compare the in vitro effects of different n-oxides (n-TiO(2, n-SiO(2, n-ZnO, n-CeO(2 chosen on the basis of their commercial and environmental relevance. Physico-chemical characterization of both primary particles and NP suspensions in artificial sea water-ASW was performed. Hemocyte lysosomal and mitochondrial parameters, oxyradical and nitric oxide production, phagocytic activity, as well as NP uptake, were evaluated. The results show that different n-oxides rapidly elicited differential responses hemocytes in relation to their chemical properties, concentration, behavior in sea water, and interactions with subcellular compartments. These represent the most extensive data so far available on the effects of NPs in the cells of aquatic organisms. The results indicate that Mytilus hemocytes can be utilized as a suitable model for screening the potential effects of NPs in the cells of aquatic invertebrates, and may

Synthesis of Copper-Antimony-Sulfide Nanocrystals for Solution-Processed Solar Cells.

Science.gov (United States)

Suehiro, Satoshi; Horita, Keisuke; Yuasa, Masayoshi; Tanaka, Tooru; Fujita, Katsuhiko; Ishiwata, Yoichi; Shimanoe, Kengo; Kida, Tetsuya

2015-08-17

The p-type nanocrystals (NCs) of copper-based chalcogenides, such as CuInSe2 and Cu2ZnSnS4, have attracted increasing attention in photovoltaic applications due to their potential to produce cheap solution-processed solar cells. Herein, we report the synthesis of copper-antimony-sulfide (CAS) NCs with different crystal phases including CuSbS2, Cu3SbS4, and Cu12Sb4S13. In addition, their morphology, crystal phase, and optical properties were characterized using transmission electron microscopy, X-ray diffractometry, UV-vis-near-IR spectroscopy, and photoemission yield spectroscopy. The morphology, crystal phase, and electronic structure were significantly dependent on the chemical composition in the CAS system. Devices were fabricated using particulate films consisting of CAS NCs prepared by spin coating without a high-temperature treatment. The CAS NC-based devices exhibited a diode-like current-voltage characteristic when coupled with an n-type CdS layer. In particular, the CuSbS2 NC devices exhibited photovoltaic responses under simulated sunlight, demonstrating its applicability for use in solution-processed solar cells.

N-Oxide-N-oxide interactions and Cl...Cl halogen bonds in pentachloropyridine N-oxide: the many-body approach to interactions in the crystal state.

Science.gov (United States)

Wzgarda-Raj, Kinga; Rybarczyk-Pirek, Agnieszka J; Wojtulewski, Sławomir; Palusiak, Marcin

2018-02-01

Pentachloropyridine N-oxide, C 5 Cl 5 NO, crystallizes in the monoclinic space group P2 1 /c. In the crystal structure, molecules are linked by C-Cl...Cl halogen bonds into infinite ribbons extending along the crystallographic [100] direction. These molecular aggregates are further stabilized by very short intermolecular N-oxide-N-oxide interactions into herringbone motifs. Computations based on quantum chemistry methods allowed for a more detailed description of the N-oxide-N-oxide interactions and Cl...Cl halogen bonds. For this purpose, Hirshfeld surface analysis and the many-body approach to interaction energy were applied.

Treatment of model and galvanic waste solutions of copper(II) ions using a lignin/inorganic oxide hybrid as an effective sorbent.

Science.gov (United States)

Ciesielczyk, Filip; Bartczak, Przemysław; Klapiszewski, Łukasz; Jesionowski, Teofil

2017-04-15

A study was made concerning the removal of copper(II) ions from model and galvanic waste solutions using a new sorption material consisting of lignin in combination with an inorganic oxide system. Specific physicochemical properties of the material resulted from combining the activity of the functional groups present in the structure of lignin with the high surface area of the synthesized oxide system (585m 2 /g). Analysis of the porous structure parameters, particle size and morphology, elemental composition and characteristic functional groups confirmed the effective synthesis of the new type of sorbent. A key element of the study was a series of tests of adsorption of copper(II) ions from model solutions. It was determined how the efficiency of the adsorption process was affected by the process time, mass of sorbent, concentration of adsorbate, pH and temperature. Potential regeneration of adsorbent, which provides the possibility of its reusing and recovering the adsorbed copper, was also analyzed. The sorption capacity of the material was measured (83.98mg/g), and the entire process was described using appropriate kinetic models. The results were applied to the design of a further series of adsorption tests, carried out on solutions of real sewage from a galvanizing plant. Copyright © 2017 Elsevier B.V. All rights reserved.

In situ characterization of uranium and americium oxide solid solution formation for CRMP process: first combination of in situ XRD and XANES measurements.

Science.gov (United States)

Caisso, Marie; Picart, Sébastien; Belin, Renaud C; Lebreton, Florent; Martin, Philippe M; Dardenne, Kathy; Rothe, Jörg; Neuville, Daniel R; Delahaye, Thibaud; Ayral, André

2015-04-14

Transmutation of americium in heterogeneous mode through the use of U1-xAmxO2±δ ceramic pellets, also known as Americium Bearing Blankets (AmBB), has become a major research axis. Nevertheless, in order to consider future large-scale deployment, the processes involved in AmBB fabrication have to minimize fine particle dissemination, due to the presence of americium, which considerably increases the risk of contamination. New synthesis routes avoiding the use of pulverulent precursors are thus currently under development, such as the Calcined Resin Microsphere Pelletization (CRMP) process. It is based on the use of weak-acid resin (WAR) microspheres as precursors, loaded with actinide cations. After two specific calcinations under controlled atmospheres, resin microspheres are converted into oxide microspheres composed of a monophasic U1-xAmxO2±δ phase. Understanding the different mechanisms during thermal conversion, that lead to the release of organic matter and the formation of a solid solution, appear essential. By combining in situ techniques such as XRD and XAS, it has become possible to identify the key temperatures for oxide formation, and the corresponding oxidation states taken by uranium and americium during mineralization. This paper thus presents the first results on the mineralization of (U,Am) loaded resin microspheres into a solid solution, through in situ XAS analysis correlated with HT-XRD.

Corrosion of type 304L stainless steel in boiling dilute neptunium nitrate solution

International Nuclear Information System (INIS)

Motooka, Takafumi; Kiuchi, Kiyoshi

2003-01-01

Corrosion of type 304L stainless steel in nitric acid solution containing neptunium was studied under immersion and heat-transfer condition. Corrosion rates of stainless steel were obtained by the weight loss measurement and the quantitative analysis of metallic ions dissolved in solution. The surface morphology was observed by scanning electron microscopy. The corrosion acceleration mechanism was investigated by polarization measurement and spectrophotometry. The corrosion rate in boiling 9M nitric acid was accelerated by addition of neptunium. The corrosion of stainless steel was promoted under heat-transfer condition compared to immersion condition. In polarization measurements, the cathodic current was increased by addition of neptunium. Spectrophotometric measurements showed the oxidization of neptunium in boiling nitric acid. It was suggested that the accelerated corrosion in nitric acid solution containing neptunium was caused by re-oxidation of neptunium. (author)

Non-uniform Solute Segregation at Semi-Coherent Metal/Oxide Interfaces

Science.gov (United States)

Choudhury, Samrat; Aguiar, Jeffery A.; Fluss, Michael J.; Hsiung, Luke L.; Misra, Amit; Uberuaga, Blas P.

2015-08-01

The properties and performance of metal/oxide nanocomposites are governed by the structure and chemistry of the metal/oxide interfaces. Here we report an integrated theoretical and experimental study examining the role of interfacial structure, particularly misfit dislocations, on solute segregation at a metal/oxide interface. We find that the local oxygen environment, which varies significantly between the misfit dislocations and the coherent terraces, dictates the segregation tendency of solutes to the interface. Depending on the nature of the solute and local oxygen content, segregation to misfit dislocations can change from attraction to repulsion, revealing the complex interplay between chemistry and structure at metal/oxide interfaces. These findings indicate that the solute chemistry at misfit dislocations is controlled by the dislocation density and oxygen content. Fundamental thermodynamic concepts - the Hume-Rothery rules and the Ellingham diagram - qualitatively predict the segregation behavior of solutes to such interfaces, providing design rules for novel interfacial chemistries.

Solution-processed highly conductive PEDOT:PSS/AgNW/GO transparent film for efficient organic-Si hybrid solar cells.

Science.gov (United States)

Xu, Qiaojing; Song, Tao; Cui, Wei; Liu, Yuqiang; Xu, Weidong; Lee, Shuit-Tong; Sun, Baoquan

2015-02-11

Hybrid solar cells based on n-Si/poly(3,4-ethylenedioxythiophene):poly(styrene- sulfonate) (PEDOT:PSS) heterojunction promise to be a low cost photovoltaic technology by using simple device structure and easy fabrication process. However, due to the low conductivity of PEDOT:PSS, a metal grid deposited by vacuum evaporation method is still required to enhance the charge collection efficiency, which complicates the device fabrication process. Here, a solution-processed graphene oxide (GO)-welded silver nanowires (AgNWs) transparent conductive electrode (TCE) was employed to replace the vacuum deposited metal grid. A unique "sandwich" structure was developed by embedding an AgNW network between PEDOT:PSS and GO with a figure-of-merit of 8.6×10(-3) Ω(-1), which was even higher than that of sputtered indium tin oxide electrode (6.6×10(-3) Ω(-1)). A champion power conversion efficiency of 13.3% was achieved, because of the decreased series resistance of the TCEs as well as the enhanced built-in potential (Vbi) in the hybrid solar cells. The TCEs were obtained by facile low-temperature solution process method, which was compatible with cost-effective mass production technology.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

KAUST Repository

Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, Mohamed N.; Alshareef, Husam N.

2015-01-01

, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

KAUST Repository

Isakov, Ivan

2016-12-29

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

KAUST Repository

Isakov, Ivan; Paterson, Alexandra F.; Solomeshch, Olga; Tessler, Nir; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.

2016-01-01

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Jo, Jeong-Wan; Park, Sung Kyu, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Kim, Yong-Hoon, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-07-28

In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

Reduction of Tc(VII) and Np(V) in solution by ferrous iron. A laboratory study of homogeneous and heterogeneous redox processes

International Nuclear Information System (INIS)

Cui, D.; Eriksen, T.E.

1996-03-01

The redox chemistry of Technetium and Neptunium in deep groundwater systems has been studied under well controlled conditions in laboratory experiments. The measured redox potentials in anoxic deep groundwater systems are consistent with redox reactions between Fe(II) in solution and hydrous Fe(III)-oxide phases. The fracture filling material and groundwater in transmissive fractures in bedrock constitute two different compartments in the groundwater system and experiments were therefore carried out in homogeneous Fe(II) containing solutions and in heterogeneous mixtures of solution with Fe(II) containing solid mineral phases. Reduction of the strongly sorbing neptunyl cation (NpO 2 + ) and the slightly sorbing pertechnetate anion (TcO 4 - ) by Fe(II) in solution was found to proceed very slowly, if at all, in reaction vessels with hydrophobic inner surfaces. However, in the heterogeneous systems we observed surface mediated reduction to the slightly soluble ( -8 mol*dm -3 ) tetravalent (hydr)oxides TcO 2 *nH 2 O (=Tc(OH) 4 ) and NpO 2 *nH 2 O (=Np(OH) 4 ) by Fe(II) sorbed on quartz,precipitated Fe(OH) 2 (s), Fe(II)CO 3 (s) and Fe(II) bearing minerals such as magnetite, hornblende and Fe(II)-chlorite. It is concluded that surface mediated redox-reactions will be the most effective pathway for the reduction of Tc(VII) and Np(V) in deep groundwater systems. On exposure of the surface-precipitated tetravalent (hydr)oxides to air saturated groundwater solutions the oxidative dissolution was found to be a very slow process and high concentration of hydrogen peroxide was required for oxidative dissolution. The slow rate of oxidative dissolution is most probably due to kinetic suppression of the reactions between dissolved oxygen and the precipitated (hydr)oxides. The kinetic suppression is caused by competing redox reactions at the surface of the Fe(II)-bearing minerals which consumes the dissolved oxygen. 30 refs, 22 figs

Reduction of Tc(VII) and Np(V) in solution by ferrous iron. A laboratory study of homogeneous and heterogeneous redox processes

Energy Technology Data Exchange (ETDEWEB)

Cui, D.; Eriksen, T.E. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Chemistry

1996-03-01

The redox chemistry of Technetium and Neptunium in deep groundwater systems has been studied under well controlled conditions in laboratory experiments. The measured redox potentials in anoxic deep groundwater systems are consistent with redox reactions between Fe(II) in solution and hydrous Fe(III)-oxide phases. The fracture filling material and groundwater in transmissive fractures in bedrock constitute two different compartments in the groundwater system and experiments were therefore carried out in homogeneous Fe(II) containing solutions and in heterogeneous mixtures of solution with Fe(II) containing solid mineral phases. Reduction of the strongly sorbing neptunyl cation (NpO{sub 2}{sup +}) and the slightly sorbing pertechnetate anion (TcO{sub 4}{sup -}) by Fe(II) in solution was found to proceed very slowly, if at all, in reaction vessels with hydrophobic inner surfaces. However, in the heterogeneous systems we observed surface mediated reduction to the slightly soluble (<10{sub -8} mol*dm{sup -3}) tetravalent (hydr)oxides TcO{sub 2}*nH{sub 2}O (=Tc(OH){sub 4}) and NpO{sub 2}*nH{sub 2}O (=Np(OH){sub 4}) by Fe(II) sorbed on quartz,precipitated Fe(OH){sub 2}(s), Fe(II)CO{sub 3}(s) and Fe(II) bearing minerals such as magnetite, hornblende and Fe(II)-chlorite. It is concluded that surface mediated redox-reactions will be the most effective pathway for the reduction of Tc(VII) and Np(V) in deep groundwater systems. On exposure of the surface-precipitated tetravalent (hydr)oxides to air saturated groundwater solutions the oxidative dissolution was found to be a very slow process and high concentration of hydrogen peroxide was required for oxidative dissolution. The slow rate of oxidative dissolution is most probably due to kinetic suppression of the reactions between dissolved oxygen and the precipitated (hydr)oxides. The kinetic suppression is caused by competing redox reactions at the surface of the Fe(II)-bearing minerals which consumes the dissolved oxygen.

Reductive and oxidative reactions with inorganic colloids in aqueous solution initiated by ultrasound

International Nuclear Information System (INIS)

Mulvaney, P.C.; Sostaric, J.Z.; Ashokkumar, M.; Grieser, F.

1998-01-01

Full text: The absorption of ultrasound in an aqueous solution can lead to the formation of H and OH radicals which can act as redox species or react with solutes to produce secondary radicals which themselves may participate in electron transfer reactions. The radical formation occurs through the growth then rapid collapse of microbubbles a process that produces localised hot spots with an internal temperature of the order of 5000 K. We have examined two colloidal systems one involving the reductive dissolution of MnO 2 colloids and the other the oxidative dissolution of CdS colloids. In the case of MnO 2 dissolution we found that the reduction of the colloidal metal oxide was considerably enhanced in the presence of aliphatic alcohols in solution and the longer the alkyl chain length on the alcohol the greater its effect. The dissolution of CdS colloids which we ascribe to the reaction of H 2 O 2 and O 2 - with the metal sulfide lo yield Cd 2+ and S could be significantly retarded by the presence of excess S 2- in solution. The mechanisms involved in these two dissolution processes will he presented. Our results clearly show that sonochemical reactions are quite efficient in colloidal solutions and this fact needs to be considered when using sonication to disperse colloidal material in solution, a common practice among colloid chemists

Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

International Nuclear Information System (INIS)

Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

2010-01-01

oxidation zinc nitride the film converted to p-type zinc oxide and the film became more transparent. During the oxidation process at each temperature Hall measurements were made to determine carrier type, carrier concentration, mobility and resistivity. Hall effect measurements indicated that ZnO films were p-type, the reliable results obtained for carrier concentration and mobility. Hall effect measurements proved that after annealing at 350 degrees Celsium up to 500 degrees Celsium the film was p-type. By increasing the oxidation temperature over 550 degrees Celsium the ZnO thin films turned into n-type due to the loss of N atoms in the film. Room temperature photoluminescence measurements were performed to investigate doping and impurity level of these films. The deposited best quality n and p type ZnO thin films were used to produce hetero and homojunctions. p-type ZnO deposited on the n-type Si substrate and aluminum or indium was evaporated as metal contacts (n-p). On the other hand n-type ZnO deposited on p-type Si substrate for p-n structure. In the case of homo-junction both n and p-type ZnO thin films were deposited on glass substrates with Al contacts. Current-Voltage characteristics of these devices were determined and the typical result for p-n hetero-junction was shown here

Dissolution of thorium/uranium mixed oxide in nitric acid-hydrofluoric acid solution

International Nuclear Information System (INIS)

Filgueiras, S.A.C.

1984-01-01

The dissolution process of thorium oxide and mixed uranium-thorium oxide is studied, as a step of the head-end of the fuel reprocessing. An extensive bibliography was analysed, concerning the main aspects of the system, specially the most important process variables. Proposed mechanisms and models for the thorium oxide dissolution are presented. The laboratory tests were performed in two phases: at first, powdered thoria was used as the material to be dissolved. The objective was to know how changes in he concentrations of the dissolvent solution components HNO 3 , HF and Al(NO 3 ) 3 affect the dissolution rate. The tests were planned according to the fractional factorial method. Thes results showed that it is advantageous to work with powdered material, since the reaction occurs rapidly. And, if the Thorex solution (HNO 3 13M, HF 0.05M and Al(NO 3 ) 3 0.10M) is a suitable dissolvent, it was verified that it is possible to reduce the concentration of either nitric or fluoridric acid, without reducing the reaction rate to an undesirable value. It was also observed significant interaction between the components of the dissolvent solution. In the second phase of the tests, (Th, 5%U)O 2 sintered pellets were used. The main goals were to know the pellets dissolution behaviour and to compare the results for different pellets among themselves. It was observed that the metallurgical history of the material strongly influences its dissolution, specially the density and the microstructure. It was also studied how the (Th,U)O 2 mass/Thorex solution volume ratio affects the time needed to obtain an 1 M Th/liter solution. The activation energy for the reaction was obtained. (Author) [pt

Precipitation of plutonium from acidic solutions using magnesium oxide

International Nuclear Information System (INIS)

Jones, S.A.

1994-01-01

Magnesium oxide will be used as a neutralizing agent for acidic plutonium-containing solutions. It is expected that as the magnesium oxide dissolves, the pH of the solution will rise, and plutonium will precipitate. The resulting solid will be tested for suitability to storage. The liquid is expected to contain plutonium levels that meet disposal limit requirements

Evaporation and wet oxidation of steam generator cleaning solutions

International Nuclear Information System (INIS)

Baldwin, P.N. Jr.

1996-01-01

Ethylene diamine tetra acetic acid (EDTA) is used in metal-cleaning formulations. Usually the form of the EDTA used is the tetra ammonium salt. When these powerful cleaning solutions are used in steam generators, they attract the key metals of interest--iron and copper. A reduction in the volume of these cleaners and EDTA destruction is required to meet waste management and disposal standards. One method of volume reduction is described: concentration by evaporation. Once volume is reduced, the liquid waste can then be further volume reduced and treated for EDTA content through the use of wet oxidation. The effect of this process on the total organic carbon (TOC) in the form of EDTA contained in the copper as well as the iron spent cleaning solutions is reviewed, including regression analysis of selected benchmark and production data. A regressive analysis is made of the relationship between the EDTA and the TOC analyzed in the wet-oxidation batch residuals as well as the summary effects of hydrogen peroxide, sulfuric acid, and reaction time on the percentage of TOC destroyed

Photo-assisted Fenton type processes for the degradation of phenol: A kinetic study

International Nuclear Information System (INIS)

Kusic, Hrvoje; Koprivanac, Natalija; Bozic, Ana Loncaric; Selanec, Iva

2006-01-01

In this study the application of advanced oxidation processes (AOPs), dark Fenton and photo-assisted Fenton type processes; Fe 2+ /H 2 O 2 , Fe 3+ /H 2 O 2 , Fe 0 /H 2 O 2 , UV/Fe 2+ /H 2 O 2 , UV/Fe 3+ /H 2 O 2 and UV/Fe 0 /H 2 O 2 , for degradation of phenol as a model organic pollutant in the wastewater was investigated. A detail kinetic modeling which describes the degradation of phenol was performed. Mathematical models which predict phenol decomposition and formation of primary oxidation by-products: catechol, hydroquinone and benzoquinone, by applied processes were developed. The study also consist the modeling of mineralization kinetic of the phenol solution by applied AOPs. This part, besides well known reactions of Fenton and photo-Fenton chemistry, involves additional reactions which describe removal of iron from catalytic cycle through formation of ferric complexes and its regeneration induced by UV radiation. Phenol decomposition kinetic was monitored by HPLC analysis and total organic carbon content measurements (TOC). Complete phenol removal was obtained by all applied processes. Residual TOC by applied Fenton type processes ranged between 60.2 and 44.7%, while the efficiency of those processes was significantly enhanced in the presence of UV light, where residual TOC ranged between 15.2 and 2.4%

A Study on the Oxidative-dissolution Leaching of Fission Product Oxides in the carbonate solution

International Nuclear Information System (INIS)

Lee, Eil Hee; Kim, Kwang Wook; Lim, Jae Gwan; Chung, Dong Yong; Yang, Han Beom; Joe, Kih Soo; Seo, Heui Seung; Kim, Yeon Hwa; Lee, Se Yoon

2009-07-01

This study was carried out to investigate the characteristics of an oxidativedissolution leaching of FP co-dissolved with U in a carbonate solution of Na 2 CO 3 - H 2 O 2 and (NH 4 ) 2 CO 3 -H 2 O 2 , respectively. Simulated FP-oxides which contained 12 components have been added to the solution to examine their oxidative dissolution characteristics. It was found that H 2 O 2 was an effective oxidant to minimize the dissolution of FP in a carbonate solution. In 0.5M Na 2 CO 3 -0.5M H 2 O 2 and 0.5M (NH 4 ) 2 CO 3 -0.5M H 2 O 2 solution, some elements such as Re, Te, Cs and Mo seem to be dissolved together with U. It is revealed that dissolution rates of Re, Te and Cs are high (completely dissolved within 10∼20 minutes) due to their high solubility in Na 2 CO 3 and (NH 4 ) 2 CO 3 solution regardless of the addition of H 2 O 2 , and independent of the concentrations of Na 2 CO 3 and H 2 O 2 . However, Mo was slowly dissolved by an oxidative dissolution with H 2 O 2 . It is found that the most important factor for the oxidative dissolution of FP is the pH of the solution and an effective oxidative dissolution is achieved at a pH between 10∼12 for Na 2 CO 3 and a pH between 9∼10 for (NH 4 ) 2 CO 3 , respectively, in order to minimize the dissolution of FP

Effects of Temperature on Aggregation Kinetics of Graphene Oxide in Aqueous Solutions

Science.gov (United States)

Wang, M.; Gao, B.; Tang, D.; Sun, H.; Yin, X.; Yu, C.

2017-12-01

Temperature may play an important role in controlling graphene oxide (GO) stability in aqueous solutions, but it has been overlooked in the literature. In this work, laboratory experiments were conducted to determine the effects of temperature (6, 25, and 40 °C) on GO aggregation kinetics under different combinations of ionic strength, cation type, humic acid (HA) concentration by monitoring GO hydrodynamic radii and attachment efficiencies. The results showed that, without HA, temperature increase promoted GO aggregation in both monovalent (Na+ and K+) and divalent (Ca2+) solutions. This phenomenon might be caused by multiple processes including enhanced collision frequency, enhanced cation dehydration, and reduced electrostatic repulsion. The presence of HA introduced steric repulsion forces that enhanced GO stability and temperature showed different effects GO aggregation kinetics in monovalent and divalent electrolytes. In monovalent electrolytes, cold temperature diminished the steric repulsion of HA-coated GO. As a result, the fastest increasing rate of GO hydrodynamic radius and the smallest critical coagulation concentration value appeared at the lowest temperature (6 °C). Conversely, in divalent electrolyte solutions with HA, high temperate favored GO aggregation, probably because the interactions between Ca2+ and HA increased with temperature resulting in lower HA coating on GO. Findings of this work emphasized the importance of temperature as well as solution chemistry on the stability and fate of GO nanoparticles in aquatic environment.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

Science.gov (United States)

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Process for recovering tungsten from alkaline leaching solution of tungsten ores

International Nuclear Information System (INIS)

Onozaki, S.; Nemoto, S.; Hazeyama, T.

1976-01-01

This invention relates to a process for recovering tungsten from an alkaline leaching solution of tungsten ores. This invention comprises adjusting the pH of an alkaline leaching solution which is obtained by lixiviating ore containing tungsten with an alkaline solution to 7--8 with acid to oxidize molybdic acid ions in the solution, adding a sulfide donor, then precipitating molybdenum sulfide compounds by adjusting the pH value of the solution to 2--3. Tungstic acid ions are recovered as calcium tungstate by the addition of a calcium ion donor after the molybdenum sulfide compounds are separated

Corrosion characteristics and oxide microstructures of Zircaloy-4 in aqueous alkali hydroxide solutions

International Nuclear Information System (INIS)

Jeong, Y.H.; Baek, J.H.; Kim, S.J.; Kim, H.G.

1999-01-01

The corrosion characteristics of Zircaloy-4 have been investigated in various aqueous solutions of LiOH, NaOH, KOH, RbOH and CsOH with equimolar M + and OH - at 350 C. The characterization of the oxides was performed using transmission electron microscope (TEM) and scanning electron microscope (SEM) on the samples which were prepared to have an equal oxide thickness in pre-transition and post-transition regimes. At a low concentration (4.3 mmol) of aqueous alkali hydroxide solutions, the corrosion rates decrease gradually as the ionic radius of cation increases. At a high concentration (32.5 mmol), the corrosion rate increases significantly in LiOH solution and slightly in NaOH solution, but in the other hydroxide solutions such as KOH, RbOH and CsOH, the corrosion rate is not accelerated. Even if the specimens have an equal oxide thickness in LiOH, NaOH and KOH solutions, the oxide microstructure formed in the LiOH solution is quite different from those formed in the NaOH or the KOH solutions. In the LiOH solution, the oxides grown in the pre-transition regime as well as in the post-transition regime have an equiaxed structure including many pores and open grain boundaries. The oxides grown in the NaOH solution have a protective columnar structure in the pre-transition regime but an equiaxed structure in the post-transition regime. On the other hand, in the KOH solution, the columnar structure is maintained from its pre-transition regime to the post-transition regime. On the basis of the above results, it can be suggested that the cation incorporation into zirconium oxide would control the oxide microstructure, the oxide growth mechanism at the metal-oxide interface and the corrosion rate in alkali hydroxide solutions. (orig.)

Indium oxide deposition on glass by aerosol pyrolysis (Pyrosol (R) process)

International Nuclear Information System (INIS)

Blandenet, G.; Lagarde, Y.; Spitz, J.

1975-01-01

The pyrosol (R) process involves the pyrolysis of an aerosol generated by ultrasonic nebulisation from a solution of organic or inorganic compounds. This technique was used to deposit transparent n-conducting indium oxide films on glass. The electrical and optical properties of these films were studied as a function of the deposition temperature and doping (using tin or fluorine). A deposition temperature of 480 deg C and a Sn/In ratio of about 5% gave the best results. In this case, the transmission in the visible range was 92%, the infrared reflection 84% and the electrical resistivity 1.7x10 -4 ohm.cm [fr

Physicochemical Characteristics and Lipid Oxidation of Chicken Inner Fillets Subjected to Different Thermal Processing Types

Directory of Open Access Journals (Sweden)

NN Arguelo

Full Text Available ABSTRACT The objective of this study was to evaluate the effects of different types of thermal processing on the physiochemical characteristics and lipid oxidation of chicken inner fillets. The study was divided into three assays. In the first assay, 50 chicken inner fillets were divided into five treatments, totaling 10 samples per treatment. Treatments consisted in cooking in water bath, electric oven, microwave oven, deep frying, or grilling. The analyzed variables were: cooking weight loss (CWL and lipid oxidation determined by thiobarbituric acid reactive substances (TBARS. In the second assay, 50 chicken inner fillets were divided into five treatments, totaling 10 samples per treatment. Each treatment consisted of the same cooking methods applied in the first assay, and storage for 48 hours under refrigeration and reheating in a microwave oven. The variable analyzed in the second assay was lipid oxidation (TBARS. In the third assay, 30 samples of chicken inner fillets were subjected to one, four and eight freeze-thaw cycles, after which meat pH, myofibrillar fragmentation index (MFI, water retention capacity (WRC, and lipid oxidation (TBARS were determined. Chicken inner fillets submitted to deep frying and cooked in a microwave oven presented greater lipid oxidation than the other cooking methods, and deep frying resulted in the highest cooking weight loss. Reheating chicken inner fillets in a microwave oven caused the highest meat lipid oxidation. Increasing the number of freeze-thaw cycles increases the pH, MFI, WRC and TBARS values of chicken inner fillets.

Formation of iron oxides from acid mine drainage and magnetic separation of the heavy metals adsorbed iron oxides

Energy Technology Data Exchange (ETDEWEB)

Kwon, Hee Won; Kim, Jeong Jin; Kim, Young Hun [Andong National University, Andong (Korea, Republic of); Ha, Dong Woo [Korea Electrotechnology Research Institute, Changwon (Korea, Republic of)

2016-03-15

There are a few thousand abandoned metal mines in South Korea. The abandoned mines cause several environmental problems including releasing acid mine drainage (AMD), which contain a very high acidity and heavy metal ions such as Fe, Cu, Cd, Pb, and As. Iron oxides can be formed from the AMD by increasing the solution pH and inducing precipitation. Current study focused on the formation of iron oxide in an AMD and used the oxide for adsorption of heavy metals. The heavy metal adsorbed iron oxide was separated with a superconducting magnet. The duration of iron oxide formation affected on the type of mineral and the degree of magnetization. The removal rate of heavy metal by the adsorption process with the formed iron oxide was highly dependent on the type of iron oxide and the solution pH. A high gradient magnetic separation (HGMS) system successfully separated the iron oxide and harmful heavy metals.

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

KAUST Repository

Labram, John G.; Lin, Yenhung; Zhao, Kui; Li, Ruipeng; Thomas, Stuart R.; Semple, James; Androulidaki, Maria; Sygellou, Lamprini; McLachlan, Martyn A.; Stratakis, Emmanuel; Amassian, Aram; Anthopoulos, Thomas D.

2015-01-01

reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

Science.gov (United States)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

Energy Technology Data Exchange (ETDEWEB)

An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-08-04

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

Stochastic epidemic-type model with enhanced connectivity: exact solution

International Nuclear Information System (INIS)

Williams, H T; Mazilu, I; Mazilu, D A

2012-01-01

We present an exact analytical solution to a one-dimensional model of the susceptible–infected–recovered (SIR) epidemic type, with infection rates dependent on nearest-neighbor occupations. We use a quantum mechanical approach, transforming the master equation via a quantum spin operator formulation. We calculate exactly the time-dependent density of infected, recovered and susceptible populations for random initial conditions. Our results compare well with those of previous work, validating the model as a useful tool for additional and extended studies in this important area. Our model also provides exact solutions for the n-point correlation functions, and can be extended to more complex epidemic-type models

Interfacial engineering of solution-processed Ni nanochain-SiO{sub x} (x < 2) cermets towards thermodynamically stable, anti-oxidation solar selective absorbers

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaobai; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755 (United States); Zhang, Qinglin [Department of Chemical and Materials Engineering, University of Kentucky, 177 F. Paul Anderson Tower, Lexington, Kentucky 40506 (United States)

2016-04-07

Cermet solar thermal selective absorber coatings are an important component of high-efficiency concentrated solar power (CSP) receivers. The oxidation of the metal nanoparticles in cermet solar absorbers is a great challenge for vacuum-free operation. Recently, we have demonstrated that oxidation is kinetically retarded in solution processed, high-optical-performance Ni nanochain-SiO{sub x} cermet system compared to conventional Ni-Al{sub 2}O{sub 3} system when annealed in air at 450–600 °C for several hours. However, for long-term, high-temperature applications in CSP systems, thermodynamically stable antioxidation behavior is highly desirable, which requires new mechanisms beyond kinetically reducing the oxidation rate. Towards this goal, in this paper, we demonstrate that pre-operation annealing of Ni nanochain-SiO{sub x} cermets at 900 °C in N{sub 2} forms the thermodynamically stable orthorhombic phase of NiSi at the Ni/SiO{sub x} interfaces, leading to self-terminated oxidation at 550 °C in air due to this interfacial engineering. In contrast, pre-operation annealing at a lower temperature of 750 °C in N{sub 2} (as conducted in our previous work) cannot achieve interfacial NiSi formation directly, and further annealing in air at 450–600 °C for >4 h only leads to the formation of the less stable (metastable) hexagonal phase of NiSi. Therefore, the high-temperature pre-operation annealing is critical to form the desirable orthorhombic phase of NiSi at Ni/SiO{sub x} interfaces towards thermodynamically stable antioxidation behavior. Remarkably, with this improved interfacial engineering, the oxidation of 80-nm-diameter Ni nanochain-SiO{sub x} saturates after annealing at 550 °C in air for 12 h. Additional annealing at 550 °C in air for as long as 20 h (i.e., 32 h air annealing at >550 °C in total) has almost no further impact on the structural or optical properties of the coatings, the latter being very sensitive to any

Photochemical oxidation: A solution for the mixed waste dilemma

Energy Technology Data Exchange (ETDEWEB)

Prellberg, J.W.; Thornton, L.M.; Cheuvront, D.A. [Vulcan Peroxidation Systems, Inc., Tucson, AZ (United States)] [and others

1995-12-31

Numerous technologies are available to remove organic contamination from water or wastewater. A variety of techniques also exist that are used to neutralize radioactive waste. However, few technologies can satisfactorily address the treatment of mixed organic/radioactive waste without creating unacceptable secondary waste products or resulting in extremely high treatment costs. An innovative solution to the mixed waste problem is on-site photochemical oxidation. Liquid-phase photochemical oxidation has a long- standing history of successful application to the destruction of organic compounds. By using photochemical oxidation, the organic contaminants are destroyed on-site leaving the water, with radionuclides, that can be reused or disposed of as appropriate. This technology offers advantages that include zero air emissions, no solid or liquid waste formation, and relatively low treatment cost. Discussion of the photochemical process will be described, and several case histories from recent design testing, including cost analyses for the resulting full-scale installations, will be presented as examples.

Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

Energy Technology Data Exchange (ETDEWEB)

Shin, Jeong-Hun; Jung, Hyun-Wook [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-14

In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current.

Magnetic graphene oxide for adsorption of organic dyes from aqueous solution

Science.gov (United States)

Drashya, Lal, Shyam; Hooda, Sunita

2018-05-01

Graphene oxide (GO), a 2-D carbon nanomaterial, large surface area, oxygen-containing groups (like: hydroxyl, epoxy and carboxyl) and excellent water dispersibility due to it is good adsorbent dye removal from pollutant water1. But it's difficult to separate GO from water after adsorption. Therefore, Iron oxide was introduced in Graphene oxide by decorating method to make separation more efficient2. We present herein a one step process to prepare Magnetic Graphene oxide (MGO). The Fourier transform infrared spectrometer (FT-IR), X-ray diffraction (XRD) and Raman Spectroscopy characterized the chemical structure of the MGO composite. The adsorption of dyes onto MGO was studied in relation to initial concentration of Dyes, contact time, adsorbent dose, temperature and pH value of solution. We have studied adsorption capacity of different dyes (Methylene blue and crystal violet) by MGO.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

Science.gov (United States)

Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

2018-03-01

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mixing of process heels, process solutions, and recycle streams: Results of the small-scale radioactive tests

International Nuclear Information System (INIS)

Lumetta, G.J.; Bramson, J.P.; Farmer III, O.T.; Greenwood, L.R.; Hoopes, F.V.; Mann, M.A.; Steele, M.J.; Steele, R.T.; Swoboda, R.G.; Urie, M.W.

2000-01-01

Various recycle streams will be combined with the low-activity waste (LAW) or the high-level waste (HLW) feed solutions during the processing of the Hanford tank wastes by BNFL, Inc. In addition, the LAW and HLW feed solutions will also be mixed with heels present in the processing equipment. This report describes the results of a test conducted by Battelle to assess the effects of mixing specific process streams. Observations were made regarding adverse reactions (mainly precipitation) and effects on the Tc oxidation state (as indicated by K d measurements with SuperLigreg s ign 639). The work was conducted according to test plan BNFL-TP-29953-023, Rev. 0, Small Scale Mixing of Process Heels, Solutions, and Recycle Streams. The test went according to plan, with only minor deviations from the test plan. The deviations from the test plan are discussed in the experimental section

Thermoelectric Properties of Solution-Processed n-Doped Ladder-Type Conducting Polymers

DEFF Research Database (Denmark)

Wang, Suhao; Sun, Hengda; Ail, Ujwala

2016-01-01

Ladder-type "torsion-free" conducting polymers (e.g., polybenzimidazobenzophenanthroline (BBL)) can outperform "structurally distorted" donor-acceptor polymers (e.g., P(NDI2OD-T2)), in terms of conductivity and thermoelectric power factor. The polaron delocalization length is larger in BBL than...... in P(NDI2OD-T2), resulting in a higher measured polaron mobility. Structure-function relationships are drawn, setting material-design guidelines for the next generation of conducting thermoelectric polymers....

Application of electrochemical advanced oxidation processes with a boron-doped diamond anode to degrade acidic solutions of Reactive Blue 15 (Turqueoise Blue) dye

International Nuclear Information System (INIS)

Solano, Aline Maria Sales; Martínez-Huitle, Carlos Alberto; Garcia-Segura, Sergi; El-Ghenymy, Abdellatif

2016-01-01

Highlights: • Degradation of Reactive Blue 15 solution at pH 3.0 by electrochemical oxidation, electro-Fenton and photoelectro-Fenton. • Hard destruction of the dye and its products by BDD(·OH) and much more rapidly by ·OH. • 94% mineralization by the most powerful photoelectro-Fenton at 66.7 mA cm"−"2, with acetic acid accumulation. • 25 aromatics and heteroaromatics, 30 hydroxylated derivatives and 4 carboxylic acids as products. • Release of Cl"−, SO_4"2"− and pre-eminently NO_3"− during dye mineralization. - Abstract: The degradation of the copper-phthalocyanine dye Reactive Blue 15 dye in sulfate medium has been comparatively studied by electrochemical oxidation with electrogenerated H_2O_2 (EO-H_2O_2), electro-Fenton (EF) and photoelectro-Fenton (PEF). Experiments with 100 cm"3 solutions of 0.203 mmol dm"−"3 dye were performed with a stirred tank reactor containing a boron-doped diamond (BDD) anode and an air-diffusion cathode for continuous H_2O_2 production. Experimental conditions of pH 3.0 and 0.50 mmol dm"−"3 Fe"2"+ as catalyst were found optimal for the EF process by the predominant oxidation with hydroxyl radicals formed in the bulk from Fenton’s reaction between added Fe"2"+ and generated H_2O_2. The kinetics of Reactive Blue 15 abatement was followed by reversed-phase HPLC and always obeyed a pseudo-first-order reaction. The decolorization rate in EO-H_2O_2 was much lower than dye decay due to the formation of large quantities of colored intermediates under the action of hydroxyl radicals generated at the BDD anode from water oxidation. In contrast, the color and dye removals were much more rapid in EF and PEF by the most efficient oxidation of hydroxyl radicals produced from Fenton’s reaction. PEF was the most powerful treatment owing to the photolytic action of UVA irradiation, yielding 94% mineralization after 360 min at 66.7 mA cm"−"2. The effect of current density over the performance of all methods was examined. LC

The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors

International Nuclear Information System (INIS)

Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

2014-01-01

We investigated the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors (IGZO TFTs) using zinc–tin-oxide (ZTO) as the etch-stopper layer, the so-called dual-active-layered ZTO/IGZO TFT (DALZI TFT). The DALZI TFT can use a low-cost back-channel-etch structure because of the high chemical stability of the upper ZTO layer. The DALZI TFT exhibited only a threshold voltage shift of −1.86 V under negative bias illumination stress (NBIS) conditions (stress time = 1000 s), while the unpassivated IGZO TFT suffered from a threshold voltage shift of −19.59 V under NBIS conditions (stress time = 1000 s). The superior bias stress stability of the DALZI TFT is attributed not only to the densification effect by the multi-stacking process but also to the lower sensitivity to ambient gases (e.g., oxygen and water vapour) due to the low oxygen vacancy in the upper ZTO layer. (paper)

Studies on mixed metal oxides solid solutions as heterogeneous catalysts

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H. R. Arandiyan

2009-03-01

Full Text Available In this work, a series of perovskite-type mixed oxide LaMo xV1-xO3+δ powder catalysts (x = 0, 0.1, 0.3, 0.5, 0.7, 0.9, and 1.0, with 0.5 < δ < 1.5, prepared by the sol-gel process and calcined at 750ºC, provide an attractive and effective alternative means of synthesizing materials with better control of morphology. Structures of resins obtained during the gel formation process by FT-IR spectroscopy and XRD analysis showed that all the LaMo xV1-xO3+δ samples are single phase perovskite-type solid solutions. The surface area (BET between 2.5 - 5.0 m²/g (x = 0.1 and 1.0 respectively increases with increasing Mo ratio in the samples. They show high purity, good chemical homogeneity, and lower calcinations temperatures as compared with the solid-state chemistry route. SEM coupled to EDS and thermogravimetric analysis/differential thermal analyses (TGA/DTA have been carried out in order to evaluate the homogeneity of the catalyst. Finally, the experimental studies show that the calcination temperature and Mo content exhibited a significant influence on catalytic activity. Among the LaMo xV1-xO3+δ samples, LaMo0.7V0.3O4.2 showed the best catalytic activity for the topic reaction and the best activity and stability for ethane reforming at 850ºC under 8 bar.

Catalytic wet oxidation of ammonia solution: Activity of the nanoscale platinum-palladium-rhodium composite oxide catalyst

International Nuclear Information System (INIS)

Hung, C.-M.

2009-01-01

Aqueous solutions of 400-1000 mg/L of ammonia were oxidized in a trickle-bed reactor (TBR) in this study of nanoscale platinum-palladium-rhodium composite oxide catalysts, which were prepared by the co-precipitation of H 2 PtCl 6 , Pd(NO 3 ) 3 and Rh(NO 3 ) 3 . Hardly any of the dissolved ammonia was removed by wet oxidation in the absence of any catalyst, whereas about 99% of the ammonia was reduced during wet oxidation over nanoscale platinum-palladium-rhodium composite oxide catalysts at 503 K in an oxygen partial pressure of 2.0 MPa. A synergistic effect exists in the nanoscale platinum-palladium-rhodium composite structure, which is the material with the highest ammonia reduction activity. The nanometer-sized particles were characterized by TEM, XRD and FTIR. The effect of the initial concentration and reaction temperature on the removal of ammonia from the effluent streams was also studied at a liquid hourly space velocity of under 9 h -1 in the wet catalytic processes

Catalytic wet oxidation of ammonia solution: Activity of the nanoscale platinum-palladium-rhodium composite oxide catalyst

Energy Technology Data Exchange (ETDEWEB)

Hung, C.-M. [Department of Industry Engineering and Management, Yung-Ta Institute of Technology and Commerce, 316 Chung-shan Road, Linlo, Pingtung 909, Taiwan (China)], E-mail: hungcm1031@gmail.com

2009-04-15

Aqueous solutions of 400-1000 mg/L of ammonia were oxidized in a trickle-bed reactor (TBR) in this study of nanoscale platinum-palladium-rhodium composite oxide catalysts, which were prepared by the co-precipitation of H{sub 2}PtCl{sub 6}, Pd(NO{sub 3}){sub 3} and Rh(NO{sub 3}){sub 3}. Hardly any of the dissolved ammonia was removed by wet oxidation in the absence of any catalyst, whereas about 99% of the ammonia was reduced during wet oxidation over nanoscale platinum-palladium-rhodium composite oxide catalysts at 503 K in an oxygen partial pressure of 2.0 MPa. A synergistic effect exists in the nanoscale platinum-palladium-rhodium composite structure, which is the material with the highest ammonia reduction activity. The nanometer-sized particles were characterized by TEM, XRD and FTIR. The effect of the initial concentration and reaction temperature on the removal of ammonia from the effluent streams was also studied at a liquid hourly space velocity of under 9 h{sup -1} in the wet catalytic processes.

Catalytic wet oxidation of ammonia solution: activity of the nanoscale platinum-palladium-rhodium composite oxide catalyst.

Science.gov (United States)

Hung, Chang-Mao

2009-04-15

Aqueous solutions of 400-1000 mg/L of ammonia were oxidized in a trickle-bed reactor (TBR) in this study of nanoscale platinum-palladium-rhodium composite oxide catalysts, which were prepared by the co-precipitation of H(2)PtCl(6), Pd(NO(3))(3) and Rh(NO(3))(3). Hardly any of the dissolved ammonia was removed by wet oxidation in the absence of any catalyst, whereas about 99% of the ammonia was reduced during wet oxidation over nanoscale platinum-palladium-rhodium composite oxide catalysts at 503 K in an oxygen partial pressure of 2.0 MPa. A synergistic effect exists in the nanoscale platinum-palladium-rhodium composite structure, which is the material with the highest ammonia reduction activity. The nanometer-sized particles were characterized by TEM, XRD and FTIR. The effect of the initial concentration and reaction temperature on the removal of ammonia from the effluent streams was also studied at a liquid hourly space velocity of under 9 h(-1) in the wet catalytic processes.

Development of a novel wet oxidation process for hazardous and mixed wastes

International Nuclear Information System (INIS)

Dhooge, P.M.

1994-01-01

Many DOE waste streams and remediates contain complex and variable mixtures of organic compounds, toxic metals, and radionuclides. These materials are often dispersed in organic or inorganic matrices, such as personal protective equipment, various sludges, soils, and water. The over all objective of the effort described here is to develop a novel catalytic wet oxidation process for the treatment of these multi-component wastes, with the aim of providing a versatile, non-thermal method which will destroy hazardous organic compounds while simultaneously containing and concentrating toxic and radioactive metals for recovery or disposal in a readily stabilized matrix. The DETOX process uses a unique combination of metal catalysts to increase the rate of oxidation of organic materials. The metal catalysts are in the form of salts dissolved in a dilute acid solution. A typical catalyst composition is 60% ferric chloride, 3--4% hydrochloric acid, 0.13% platinum ions, and 0.13% ruthenium ions in a water solution. The catalyst solution is maintained at 423--473 K. Wastes are introduced into contact with the solution, where their organic portion is oxidized to carbon dioxide and water. If the organic portion is chlorinated, hydrogen chloride will be produced as a product. The process is a viable alternative to incineration for the treatment of organic mixed wastes. Estimated costs for waste treatment using the process are from $2.50/kg to $25.00/kg, depending on the size of the unit and the amount of waste processed. Process units can be mobile for on-site treatment of wastes. Results from phase 1 and 2, design and engineering studies, are described

Charge disproportionation in Fe/sup 4 + -/oxides with perovskite-type structures

Energy Technology Data Exchange (ETDEWEB)

Takano, M; Nakanishi, N [Konan Univ., Kobe (Japan). Faculty of Science; Takeda, Y; Naka, S [Nagoya Univ. (Japan)

1979-01-01

For a further examination and elaboration of our simple charge disproportionation model for Fe/sup 4 +/-oxides, 2Fe/sup 4 +/..-->..Fe/sup 3 +/ + Fe/sup 5 +/, two series of solid solutions Casub(1-x)Srsub(x)FeO/sub 3/ and Srsub(1-x)Lasub(x)FeO/sub 3/ with the perovskite structure have been studied. The Moessbauer spectrum of Srsub(0,5)Lasub(0.5)FeO/sub 3/ at 4 K clearly indicates the disproportionation. For both series of oxides, the disproportionation seems to set in at the Tsub(N).

Advanced Oxidation of the Endosulfan and Profenofos in Aqueous Solution Using UV/H2O22 Process

Directory of Open Access Journals (Sweden)

Mohammad Mehdi Amin

2014-01-01

Full Text Available Degradation of two pesticides, endosulfan and profenofos, was investigated in aqueous solution using a combination of ultraviolet (UV light and hydrogen peroxide (H2O2. Photochemical experiments based on the L9 (34 three-level orthogonal array of the Taguchi method with four control factors including initial pesticide concentrations (10, 15 and 20 mg/l, UV irradiation times (30, 60 and 90 min, pH (5, 6.5 and 8 and H2O2 (0.1, 0.01 and 0.05 M were conducted. The endosulfan and profenofos were analyzed using gas chromatography with electron capture detector (ECD and gas chromatography with mass spectrometry (GC-MS respectively. Under the optimum conditions, 96.5% of the endosulfan and 98.5% of the profenofos were removed in about 90 min. The study also showed that the oxidation rate was enhanced more during the UV/H2O2 process in comparison to direct photolysis. The results of our study suggested that the concentration of 0.1 molar H2O2 and 10 ppm of pesticide in the solution at pH 8 with 90 min UV irradiation time were the optimal conditions for the photochemical degradation of two pesticides. The photochemical degradation with UV/H2O2 can be an efficient method to remove the endosulfan and profenofos from aqueous solution.

Solution-processed white organic light-emitting devices based on small-molecule materials

International Nuclear Information System (INIS)

Wang Dongdong; Wu Zhaoxin; Zhang Xinwen; Wang Dawei; Hou Xun

2010-01-01

We investigated solution-processed films of 4,4'-bis(2,2-diphenylvinyl)-1,1'-bibenyl (DPVBi) and its blends with N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) by atomic force microscopy (AFM). The AFM result shows that the solution-processed films are pin-free and their morphology is smooth enough to be used in OLEDs. We have developed a solution-processed white organic light-emitting device (WOLEDs) based on small-molecules, in which the light-emitting layer (EML) was formed by spin-coating the solution of small-molecules on top of the solution-processed hole-transporting layer. This WOLEDs, in which the EML consists of co-host (DPVBi and TPD), the blue dopant (4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and the yellow dye (5,6,11,12-tetraphenylnaphtacene), has a current efficiency of 6.0 cd/A at a practical luminance of 1000 cd/m 2 , a maximum luminance of 22500 cd/m 2 , and its color coordinates are quite stable. Our research shows a possible approach to achieve efficient and low-cost small-molecule-based WOLEDs, which avoids the complexities of the co-evaporation process of multiple dopants and host materials in vacuum depositions.

A salt water battery with high stability and charging rates made from solution processed conjugated polymers with polar side chains

OpenAIRE

Moia, Davide; Giovannitti, Alexander; Szumska, Anna A.; Schnurr, Martin; Rezasoltani, Elham; Maria, Iuliana P.; Barnes, Piers R. F.; McCulloch, Iain; Nelson, Jenny

2017-01-01

We report a neutral salt water based battery which uses p-type and n-type solution processed polymer films as the cathode and the anode of the cell. The specific capacity of the electrodes (approximately 30 mAh cm-3) is achieved via formation of bipolarons in both the p-type and n-type polymers. By engineering ethylene glycol and zwitterion based side chains attached to the polymer backbone we facilitate rapid ion transport through the non-porous polymer films. This, combined with efficient t...

A New Flame-Retardant Polyamide Containing Phosphine Oxide and N,N-(4,4-diphenylether) Moieties in the Main Chain: Synthesis and Characterization

OpenAIRE

FAGHIHI, Khalil

2014-01-01

A new flame-retardant polyamide containing phosphine oxide moieties in the main chain was synthesized from the solution polycondensation reaction of bis(3-aminophenyl) phenyl phosphine oxide with N,N-(4,4-diphenylether) bis trimellitimide, using thionyl chloride, N-methyl-2-pyrolidone, and pyridine as condensing agents. This new polymer was obtained in high yield (92%), has high inherent viscosity (0.73 dL/g), and was characterized by elemental analysis, FT-IR spectroscopy, thermal gr...

A Study of Acid-Base Equilibria in Acetonitrile Systems of 2-Halo(Cl,Br,I-4-nitropicoline(3,5,6 N-oxides

Directory of Open Access Journals (Sweden)

Lech Chmurzynski

1999-03-01

Full Text Available An attempt has been made to determine potentiometrically (1 acid dissociation constants of cations obtained by protonation of nine trisubstituted pyridine N-oxides, namely 2-halo(Cl, Br and I-4-nitropicoline N-oxides with the methyl group at positions 3, 5, and 6, as well as (2 the cationic homoconjugation constants of these cationic acids with conjugated N-oxides in acetonitrile. On the basis of the substitution effect, variations of the acid dissociation constants of the trisubstituted pyridine N-oxide cations are discussed. The determined pKa values of the protonated 2-halo-4-nitropicoline N-oxides are compared with the previously determined equilibrium constants of the cationic acids conjugated with the mono- and disubstituted pyridine N-oxides in acetonitrile. Further, based on the pKa values of the protonated 2-halo-4-nitropicoline N-oxides in acetonitrile, supplemented with correlations between pKa’s of the protonated mono- and disubstituted pyridine N-oxides in acetonitrile and water, the pKa's of the acids conjugated with the trisubstituted N-oxides studied in aqueous solutions have been estimated. Moreover, it has been concluded that the cationic homoconjugation constants cannot be determined by potentiometric titration in acetonitrile solutions of the 2-halo-4-nitropicoline N-oxide systems.

Investigation of DBS electro-oxidation reaction in the aqueous-organic solution of LiClO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Darlewski, Witold [Military University of Technology, Institute of Chemistry, Kaliskiego Street 2, 00-908 Warszawa (Poland); Popiel, Stanislaw, E-mail: spopiel@wat.edu.pl [Military University of Technology, Institute of Chemistry, Kaliskiego Street 2, 00-908 Warszawa (Poland); Nalepa, Tomasz [Department of Defense Affairs of the Ministry of Economy, Plac Trzech Krzyzy 3/5, 00-507 Warszawa (Poland); Gromotowicz, Waldemar [Warsaw Pharmaceutical Plant ' Polfa' S.A., Karolkowa Street 22/24, 01-207 Warszawa (Poland); Szewczyk, Rafal [Department of Biology and Environment Protection, University of Lodz, Pilarskiego Street 14/16, 90-231 Lodz (Poland); Stankiewicz, Romuald [Warsaw University, Department of Physics, Hoza Street 69, 00-681 Warszawa (Poland)

2010-03-15

A process of dibutyl sulphide (DBS) electro-oxidation using electrolysis and cyclic voltamperometry was investigated in water-methanol solution using different electrodes (platinum, boron doped diamond, graphite and glassy carbon). Obtained results indicate that the DBS electro-oxidation process is irreversible in voltamperometric conditions. It was shown that during DBS electrolytic oxidation on Pt, at the low anode potential (1.8 V), DBS was oxidized to sulphoxide and sulphone. Electrolysis at higher potential (up to 3.0 V) resulted in complete DBS oxidation and formation of various products, including: butyric acid, sulphuric acid, butanesulphinic acid, butanesulphonic acid, identified using gas chromatography (GC-AED) and mass spectrometry (GC-MS) methods.

High power n-type metal-wrap-through cells and modules using industrial processes

Energy Technology Data Exchange (ETDEWEB)

Guillevin, N.; Heurtault, B.J.B.; Geerligs, L.J.; Van Aken, B.B.; Bennett, I.J.; Jansen, M.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Jianming, Wang; Ziqian, Wang; Jinye, Zhai; Zhiliang, Wan; Shuquan, Tian; Wenchao, Zhao; Zhiyan, Hu; Gaofei, Li; Bo, Yu; Jingfeng, Xiong [Yingli Green Energy Holding Co.,Ltd. 3399 North Chaoyang Avenue, Baoding (China)

2013-10-15

This paper reviews our recent progress in the development of metal wrap through (MWT) cells and modules, produced from n-type Czochralski silicon wafers. The use of n-type silicon as base material allows for high efficiencies: for front emitter-contacted industrial cells, efficiencies above 20% have been reported. N-type MWT (nMWT) cells produced by industrial process technologies allow even higher efficiency due to reduced front metal coverage. Based on the same industrial technology, the efficiency of the bifacial n-MWT cells exceeds the efficiency of the n-type front-and-rear contact and bifacial 'Pasha' technology (n-Pasha) by 0.1-0.2% absolute, with a maximum nMWT efficiency of 20.1% so far. Additionally, full back-contacting of the MWT cells in a module results in reduced cell to module (CTM) fill factor losses. In a direct 60-cell module performance comparison, the n-MWT module, based on integrated backfoil, produced 3% higher power output than the comparable tabbed front emitter-contacted n-Pasha module. Thanks to reduced resistive losses in copper circuitry on the backfoil compared to traditional tabs, the CTM FF loss of the MWT module was reduced by about 2.2%abs. compared to the tabbed front emitter contact module. A full-size module made using MWT cells of 19.6% average efficiency resulted in a power output close to 280W. Latest results of the development of the n-MWT technology at cell and module level are discussed in this paper, including a recent direct comparison run between n-MWT and n-Pasha cells and results of n-MWT cells from 140{mu}m thin mono-crystalline wafers, with only very slight loss (1% of Isc) for the thin cells. Also reverse characteristics and effects of reverse bias for extended time at cell and module level are reported, where we find a higher tolerance of MWT modules than tabbed front contact modules for hotspots.

Small molecule solution-processed bulk heterojunction solar cells with inverted structure using porphyrin donor

Science.gov (United States)

Yamamoto, Takaki; Hatano, Junichi; Nakagawa, Takafumi; Yamaguchi, Shigeru; Matsuo, Yutaka

2013-01-01

Utilizing tetraethynyl porphyrin derivative (TE-Por) as a small molecule donor material, we fabricated a small molecule solution-processed bulk heterojunction (BHJ) solar cell with inverted structure, which exhibited 1.6% power conversion efficiency (JSC (short-circuit current) = 4.6 mA/cm2, VOC (open-circuit voltage) = 0.90 V, and FF (fill factor) = 0.39) in the device configuration indium tin oxide/TiOx (titanium sub-oxide)/[6,6]-phenyl-C61-butyric acid methyl ester:TE-Por (5:1)/MoOx (molybdenum sub-oxide)/Au under AM1.5 G illumination at 100 mW/cm2. Without encapsulation, the small molecule solution-processed inverted BHJ solar cell also showed remarkable durability to air, where it kept over 73% of its initial power conversion efficiency after storage for 28 days under ambient atmosphere in the dark.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

Comparison in decoloration efficiency among radiation, ultraviolet ray and Fenton oxidation treatment for aqueous solution of dyes

International Nuclear Information System (INIS)

Shimokawa, Toshishige; Sawai, Takeshi

1984-01-01

To establish the methods of oxidation and decomposition treatment for dyeing waste water, the processes by radiation, ultraviolet ray and Fenton oxidation were examined comparatively for the decoloration efficiency. The dyes tested were commercially available reactive dyes, RBO-3R, DBR-BB, MBY-6GS and RBB-R. In the radiation process, the dye solution was irradiated with gamma ray of cobalt-60 while blowing air through it. Radiation process and Fenton oxidation were excellent for decoloration. Ultraviolet ray was low in the treatment efficiency, so it is not practical. In the radiation process, the addition of a reagent and the adjustment of pH are not required unlike the case of the Fenton oxidation process. Its continuous operation is also possible, so it is a highly practical means. (Mori, K.)

Continuous formation of N-chloro-N,N-dialkylamine solutions in well-mixed meso-scale flow reactors

Science.gov (United States)

Jolley, Katherine E

2015-01-01

Summary The continuous flow synthesis of a range of organic solutions of N,N-dialkyl-N-chloramines is described using either a bespoke meso-scale tubular reactor with static mixers or a continuous stirred tank reactor. Both reactors promote the efficient mixing of a biphasic solution of N,N-dialkylamine in organic solvent, and aqueous sodium hypochlorite to achieve near quantitative conversions, in 72–100% in situ yields, and useful productivities of around 0.05 mol/h with residence times from 3 to 20 minutes. Initial calorimetric studies have been carried out to inform on reaction exotherms, rates and safe operation. Amines which partition mainly in the organic phase require longer reaction times, provided by the CSTR, to compensate for low mass transfer rates in the biphasic system. The green metrics of the reaction have been assessed and compared to existing procedures and have shown the continuous process is improved over previous procedures. The organic solutions of N,N-dialkyl-N-chloramines produced continuously will enable their use in tandem flow reactions with a range of nucleophilic substrates. PMID:26734089

Continuous formation of N-chloro-N,N-dialkylamine solutions in well-mixed meso-scale flow reactors

Directory of Open Access Journals (Sweden)

A. John Blacker

2015-12-01

Full Text Available The continuous flow synthesis of a range of organic solutions of N,N-dialkyl-N-chloramines is described using either a bespoke meso-scale tubular reactor with static mixers or a continuous stirred tank reactor. Both reactors promote the efficient mixing of a biphasic solution of N,N-dialkylamine in organic solvent, and aqueous sodium hypochlorite to achieve near quantitative conversions, in 72–100% in situ yields, and useful productivities of around 0.05 mol/h with residence times from 3 to 20 minutes. Initial calorimetric studies have been carried out to inform on reaction exotherms, rates and safe operation. Amines which partition mainly in the organic phase require longer reaction times, provided by the CSTR, to compensate for low mass transfer rates in the biphasic system. The green metrics of the reaction have been assessed and compared to existing procedures and have shown the continuous process is improved over previous procedures. The organic solutions of N,N-dialkyl-N-chloramines produced continuously will enable their use in tandem flow reactions with a range of nucleophilic substrates.

Anodic oxidation of commercially pure titanium for purification of polluted water

Science.gov (United States)

Benkafada, Faouzia; Kerdoud, Djahida; Bouchoucha, Ali

2018-05-01

Anodisation of pure titanium has been carried out in sulphuric acid solution at potentials ranging from 40 V to 5 days. We studied the parameters influencing the anodic deposition such as acid concentration and anodic periods. Anodic oxides thin films were characterized by X-ray diffraction, cyclic polarization and electrochemical impedance spectroscopy. The I-V curves and electrochemical impedance measurements were carried out in 0.1 N NaOH solution. The results indicated that although the thin films obtained by anodic oxidation are nonstoichiometric, they have an electric behaviour like n-type semiconducting material.

Low-temperature, solution-processed aluminum-doped zinc oxide as electron transport layer for stable efficient polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhu, Qianqian [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Yu, Jianhua [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Zhu, Dangqiang [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Zhang, Qian [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Gu, Chuantao [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Dong, Hongzhou [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Yang, Renqiang [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Dong, Lifeng, E-mail: DongLifeng@qust.edu.cn [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Department of Physics, Hamline University, St. Paul, MN 55104 (United States)

2016-04-30

A simple low-temperature solution-processed zinc oxide (ZnO) and aluminum-doped ZnO (AZO) were synthesized and investigated as an electron transport layer (ETL) for inverted polymer solar cells. A solar cell with a blend of poly(4,8-bis-alkyloxy-benzo[1,2-b:4,5-b′] dithiophene-alt-alkylcarbonyl-thieno [3,4-b] thiophene) and (6,6)-phenyl-C71-butyric acid methyl ester as an active layer and AZO as ETL demonstrates a high power conversion efficiency (PCE) of 7.36% under the illumination of AM 1.5G, 100 mW/cm{sup 2}. Compared to the cells with ZnO ETL (PCE of 6.85%), the PCE is improved by 7.45% with the introduction of an AZO layer. The improved PCE is ascribed to the enhanced short circuit current density, which results from the electron transport property of the AZO layer. Moreover, AZO is a more stable interfacial layer than ZnO. The PCE of the solar cells with AZO as ETL retain 85% of their original value after storage for 120 days, superior to the 39% of cells with ZnO ETL. The results above indicate that a simple low-temperature solution-processed AZO film is an efficient and economical ETL for high-performance inverted polymer solar cells. Due to its environmental friendliness, good electrical properties, and simple preparation approach, AZO has the potential to be applied in high-performance, large-scale industrialization of solar cells and other electronic devices. - Highlights: • ZnO and AZO were synthesized by a simple low-temperature solution-processed method. • AZO films show high transmittance and conductivity. • The photovoltaic performance can be improved with AZO as ETL. • AZO-based devices demonstrate excellent stability, with 85% retained after 120 days.

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

2000-01-01

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

Thermodynamic modelling of unloaded and loaded N,N-diethylethanolamine solutions

Directory of Open Access Journals (Sweden)

Monica Garcia

2016-10-01

Full Text Available Chemical absorption is a crucial step for several chemical processes such as ammonia production, coal gasification, methane reforming, ethylene oxide manufacturing and treatment of associated gas streams [1]. It is considered one of the main processes to eliminate CO2 emissions from power plants by post-combustion.Use of new solvents are of high interest in chemical absorption for carbon capture. For the design of the absorption and desorption columns it is essential to know the vapour–liquid equilibrium (VLE, heat of absorption and densities. N,N-diethylethanolamine (DEEA appeared as one of the amines with the lowest amount of energy needed for its regeneration [2], which would directly decrease the operation costs. DEEA has a high CO2 loading of 1 mol/mol of amine compared to the traditional MEA solvent (0.5 mol/mol amine and is obtained from renewable sources [1]. The main weakness is its low absorption rate and consequently the use of promoters is desirable.In this work, a thermodynamic model based on the electrolyte non-random two-liquid theory (eNRTL was created and fitted to correlate and predict the partial and total pressures of the unloaded and loaded aqueous DEEA solutions. New interaction parameters were obtained for the binary and tertiary system. This model represents the vapour pressures of the pure components, DEEA and H2O, with AARD of 1.9% and 1.73% respectively. Furthermore, the fitted model predicts the total pressure above the binary system, H2O-DEEA, with AARD of 0.05%. The excess of enthalpy and densities are predicted with AARD of 5.63% and 1.38% respectively. The tertiary system, H2O-DEEA-CO2, is fitted for 2 M and 5 M DEEA solutions with loading between 0.042 and 0.9 mol CO2/mol amine up to 80 °C. Results of CO2 partial pressures and total pressures are reproduced, with AARD of 19.45% and 16.18% respectively. Densities are predicted with an AARD of 1.52%. Keywords: DEEA, CO2 capture, Chemical

Biphasic kinetic investigations on the evaluation of non-salt forming reductants for Pu(IV) stripping from tributyl phosphate and N,N-dihexyl octanamide solutions in n-dodecane

International Nuclear Information System (INIS)

Prabhu, D.R.; Neelam Kumari; Kanekar, A.S.; Pathak, P.N.

2013-01-01

The relative stability of different oxidation states of actinide elements is influenced by the nature of complexes formed and redox equilibria in aqueous/non-aqueous solutions. The reduction/stripping studies on Pu(IV) ions from loaded organic phases of 1.1 M tributyl phosphate and of 1.1 M N,N-dihexyl octanamide in n-dodecane were studied using organic soluble tert-butyl hydroquinone (TBH) and aqueous soluble reductants like acetaldoxime (AX) and hydroxyurea (HU). These studies were carried out as a function of reductant and nitric acid concentration (0.5-4 M HNO 3 ) and of time. The changes in Pu oxidation states were followed by spectrophotometry for TBH and by distribution ratio values for AX and HU as reductants. Spectrophotometric investigations using TBH as reductant showed that it was desirable to strip Pu(III) formed after reduction of Pu(IV) in the organic phase, which may otherwise be reconverted to extractable Pu(IV) by in situ generated HNO 2 from oxidative degradation of TBH to tert-butyl quinone. Similarly, the biphasic reduction/stripping of Pu(IV) using AX and HU as reductant rate was affected adversely with increased aqueous phase acidity. This data will help in the accurate simulation of Pu separation processes using these reductants in mixer-settlers/pulsed columns or centrifugal contactors. (author)

Advanced oxidation of hypophosphite and phosphite using a UV/H2O2 process.

Science.gov (United States)

Liu, Peng; Li, Chaolin; Liang, Xingang; Xu, Jianhui; Lu, Gang; Ji, Fei

2013-01-01

The oxidation of hypophosphite and phosphite in an aqueous solution by an ultraviolet (UV)/H2O2 process was studied in this work. The reactions were performed in a lab-scale batch photoreactor. The effect of different parameters such as H2O2 dosage, H2O2 feeding mode and the initial pH of the solution on the oxidation efficiency of the process was investigated. The results indicated that the UV/H2O2 process could effectively oxidize hypophosphite and phosphite in both synthesized and real wastewater. However, neither H2O2 nor UV alone was able to appreciably oxidize the hypophosphite or phosphite. The best way of feeding H2O2 was found to be 'continuous feeding', which maximized the reaction rate. It was also found that the process presented a wide range of applicable initial pH (5-11). When treating real rinse-wastewater, which was obtained from the electroless nickel plating industry, both hypophosphite and phosphite were completely oxidized within 60 min, and by extending by another 30 min, over 90% of the chemical oxygen demand removal was obtained. Without any additional catalyst, the UV/H2O2 process can oxidize hypophosphite and phosphite to easily removable phosphate. It is really a powerful and environmentally friendly treatment method for the wastewater containing hypophosphite and phosphite.

New transition metal oxide fluorides with ReO{sub 3}-type structure

Energy Technology Data Exchange (ETDEWEB)

Nakhal, Suliman; Lerch, Martin [Technische Universitaet Berlin (Germany). Inst. fuer Chemie

2016-08-01

The new niobium oxide fluorides MNbO{sub 2}F{sub 4} [M = (Cr, Fe)], CrNb{sub 2}O{sub 4}F{sub 5}, and Fe{sub 2}Nb{sub 3}O{sub 6}F{sub 9} were prepared by treatment of chromium or iron nitrate with Nb-containing hydrofluoric acid solutions. Crystal structures were investigated by means of X-ray powder diffraction. All new compounds can be structurally refined in the cubic ReO{sub 3}-type. The iron niobium oxide fluorides are reddish orange, and chromium containing phases exhibit a light green color. The niobium atoms are in the highest formal oxidation state.

High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

KAUST Repository

Li, Feng; Chen, Yin; Ma, Chun; Buttner, Ulrich; Leo, Karl; Wu, Tao

2016-01-01

A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

KAUST Repository

Li, Feng

2016-12-13

A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

The relation between the kink-type solution and the kink-bell-type solution of nonlinear evolution equations

International Nuclear Information System (INIS)

Liu Chunping

2003-01-01

Using a direct algebraic method, more new exact solutions of the Kolmogorov-Petrovskii-Piskunov equation are presented by formula form. Then a theorem concerning the relation between the kink-type solution and the kink-bell-type solution of nonlinear evolution equations is given. Finally, the applications of the theorem to several well-known equations in physics are also discussed

Influence of corrosive solutions on microhardness and chemistry of magnesium oxide /001/ surfaces

Science.gov (United States)

Ishigaki, H.; Miyoshi, K.; Buckley, D. H.

1982-01-01

X-ray photoelectron spectroscopy analyses and hardness experiments were conducted on cleaved magnesium oxide /001/ surfaces. The magnesium oxide bulk crystals were cleaved to specimen size along the /001/ surface, and indentations were made on the cleaved surface in corrosive solutions containing HCl, NaOH, or HNO3 and in water without exposing the specimen to any other environment. The results indicated that chloride (such as MgCl2) and sodium films are formed on the magnesium oxide surface as a result of interactions between an HCl-containing solution and a cleaved magnesium oxide surface. The chloride films soften the magnesium oxide surface. In this case microhardness is strongly influenced by the pH value of the solution. The lower the pH, the lower the microhardness. Sodium films, which are formed on the magnesium oxide surface exposed to an NaOH containing solution, do not soften the magnesium oxide surface.

Manufacture of nano graphite oxides derived from aqueous glucose solutions and in-situ synthesis of magnetite–graphite oxide composites

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiang, E-mail: liuxiang@ahut.edu.cn; Zhao, Tiantian; Liu, Pengpeng; Cui, Ping, E-mail: cokecp@sohu.com; Hu, Peng

2015-03-01

A “bottom up” approach of manufacturing graphite oxides (GOs) derived from aqueous glucose solutions by virtue of an environmentally-friendly process and the way of in-situ synthesizing magnetite–GOs composites are described in this work in detail. The dehydrations among glucose molecules under hydrothermal condition result in the initial carbon quantum dots and ultimate GOs. The structural information of the GOs is obtained by the infrared, ultraviolet–visible and X-ray photoelectron spectra. The magnetite–GOs composites were obtained by a one-pot method under the same hydrothermal conditions as the one of preparing GOs. The composites perform high activities in catalytic degradation of Rhodamine B in the presence of hydrogen peroxides without extra heating or pH adjusting. Both the GOs and the magnetite–GOs composites are also assured by measurements of transmission electron microscope and X-ray powder diffraction. - Highlights: • Graphite oxides are made from aqueous glucose solutions by hydrothermal reaction. • A way of in-situ synthesizing composites of magnetite–graphite oxides is depicted. • The composites perform high activities in catalytic degradation of Rhodamine B.

Electrochemical synthesis of birnessite-type layered manganese oxides for rechargeable lithium batteries

Science.gov (United States)

Nakayama, Masaharu; Kanaya, Taku; Lee, Jong-Won; Popov, Branko N.

Layered manganese dioxide (MnO 2) films intercalated with Li +, Na + or Mg 2+ ions were synthesized by a one-step electrochemical method. The electrodeposition was potentiostatically performed by applying an anodic potential of 1.0 V vs. Ag/AgCl in an aqueous MnSO 4 solution containing a perchlorate salt of the cation. The electrodeposited oxide films have a birnessite-type layered structure with alkali cations and water molecules between manganese oxide layers. The galvanostatic charge-discharge experiments performed in 1 M LiPF 6-DME/PC solution indicated that the Mg 2+-intercalated MnO 2 electrode exhibits an initial discharge capacity as large as 140 mAh g -1 and it shows a better capacity retention during cycling as compared with the Li +- or Na +-intercalated MnO 2 electrode.

Synthesis and characterization of lanthanide picrate complexes with 4-picoline-N-oxide (4-pic N O)

International Nuclear Information System (INIS)

Silva, E.M. da.

1991-01-01

The lanthanide picrate complexes with 4-picoline-N-oxide were obtained from ethanolic solutions of the hydrated lanthanide picrate and the ligand. The lanthanide content was determined by complexometric titration with EDTA. Carbon, Nitrogen and Hydrogen were determined by microanalytical procedures. Chemical analysis of the lanthanide picrate complexes are also presented. (author)

Ammonium sorption and ammonia inhibition of nitrite-oxidizing bacteria explain contrasting soil N2O production

Science.gov (United States)

Venterea, R. T.; Sadowsky, M.; Breuillin-Sessoms, F.; Wang, P.; Clough, T. J.; Coulter, J. A.

2015-12-01

Better understanding of process controls over nitrous oxide (N2O) production in urine-impacted 'hot spots' and fertilizer bands is needed to improve mitigation strategies and emission models. Following amendment with bovine (Bos taurus) urine (Bu) or urea (Ur), we measured inorganic N, pH, N2O, and genes associated with nitrification in two soils ('L' and 'W') having similar texture, pH, C, and C/N ratio. Solution-phase ammonia (slNH3) was also calculated accounting for non-linear ammonium (NH4+) sorption capacities (ASC). Soil W displayed greater nitrification rates and nitrate (NO3-) levels than soil L, but was more resistant to nitrite (NO2-) accumulation and produced two to ten times less N2O than soil L. Genes associated with NO2- oxidation (nxrA) increased substantially in soil W but remained static in soil L. Soil NO2- was strongly correlated with N2O production, and cumulative (c-) slNH3 explained 87% of the variance in c-NO2-. Differences between soils were explained by greater slNH3 in soil L which inhibited NO2- oxidization leading to greater NO2- levels and N2O production. This is the first study to correlate the dynamics of soil slNH3, NO2-, N2O and nitrifier genes, and the first to show how ASC can regulate NO2- levels and N2O production.

Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

International Nuclear Information System (INIS)

Zeng, Jian-Jhou; Lin, Yow-Jon; Ruan, Cheng-He; Lin, Jian-Huang

2013-01-01

The effect of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide (RGO) doped with a conductive polymer [poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)] was examined in this study. It is found that conductivity of RGO-doped PEDOT:PSS films increases with increasing reduction temperature of graphene oxide (GO) sheets. The improvement of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, the ideality factor of n-type Si/RGO-doped PEDOT:PSS diodes decreases with increasing reduction temperature of GO sheets. The device-performance improvement originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film. In addition, note that a suitable reduction temperature is an important issue for improving the device performance. (paper)

Metrological traceability of holmium oxide solution

Science.gov (United States)

Gonçalves, D. E. F.; Gomes, J. F. S.; Alvarenga, A. P. D.; Borges, P. P.; Araujo, T. O.

2018-03-01

Holmium oxide solution was prepared as a candidate of certified reference material for spectrophotometer wavelength scale calibration. Here is presented the necessary steps for evaluation of the uncertainty and the establishment of metrological traceability for the production of this material. Preliminary results from the first produced batch are shown.

Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

Science.gov (United States)

Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

2018-05-01

The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

Processing and Characterization of Sol-Gel Cerium Oxide Microspheres

Energy Technology Data Exchange (ETDEWEB)

McClure, Zachary D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Padilla Cintron, Cristina [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2016-09-27

Of interest to space exploration and power generation, Radioisotope Thermoelectric Generators (RTGs) can provide long-term power to remote electronic systems without the need for refueling or replacement. Plutonium-238 (Pu-238) remains one of the more promising materials for thermoelectric power generation due to its high power density, long half-life, and low gamma emissions. Traditional methods for processing Pu-238 include ball milling irregular precipitated powders before pressing and sintering into a dense pellet. The resulting submicron particulates of Pu-238 quickly accumulate and contaminate glove boxes. An alternative and dust-free method for Pu-238 processing is internal gelation via sol-gel techniques. Sol-gel methodology creates monodisperse and uniform microspheres that can be packed and pressed into a pellet. For this study cerium oxide microspheres were produced as a surrogate to Pu-238. The similar electronic orbitals between cerium and plutonium make cerium an ideal choice for non-radioactive work. Before the microspheres can be sintered and pressed they must be washed to remove the processing oil and any unreacted substituents. An investigation was performed on the washing step to find an appropriate wash solution that reduced waste and flammable risk. Cerium oxide microspheres were processed, washed, and characterized to determine the effectiveness of the new wash solution.

The flashcal process for the fabrication of fuel-metal oxides using the whiteshell roto-spray calciner

International Nuclear Information System (INIS)

Sridhar, T.S.

1988-01-01

A one-step, continuous, thermochemical calcination process, called the FLASHCAL (Flash Calcination) process has been developed for the production of single- and mixed-oxide powders of fuel metals (uranium, thorium and plutonium) from the respective nitrate solutions using the Whiteshell Roto-Spray Calciner (RSC). The metal-nitrate feed solution, either by itself or mixed with a suitable chemical reactant or additive, is converted to its oxide powder in the RSC at temperatures between 300 and 600 0 C. Rapid denitration takes place in the calciner, yielding the metal-oxide powders while simultaneously destroying any excess chemical additive and reaction by-products. In the production of precursor oxide powders suitable for fuel fabrication, the FLASHCAL process has advantages over batch calcination and other processes that involve precipitation and filtration steps because fewer processing and handling operations are needed. Results obtained with thorium nitrate and uranium nitrate-thorium nitrate mixtures indicate that some measure of control over the size distribution and morphology of the oxide product powders is possible in this process with the proper selection of chemical additive, as well as the operating parameters of the calciner

Electrochemical One-Electron Oxidation of Low-Generation Polyamidoamine-Type Dendrimers with a 1,4-Phenylenediamine Core

DEFF Research Database (Denmark)

Hammerich, Ole; Hansen, Thomas; Thorvildsen, Asbjørn

2009-01-01

voltammetry (DPV) in methanol, acetonitrile, dichloromethane, and dimethyl sulfoxide. The dendrimers are more difficult to oxidize than N,N,N',N'-tetramethyl-p-phenylenediamine (TMePD). The oxidation potentials decrease with increasing dendrimer generation up to G0.5, after which the potential is essentially......A series of polyamidoamine (PAMAM)-type dendrimers with a 1,4-phenylenediamine (PD) core is prepared from PD by procedures including Michael addition of methyl acrylate followed by aminolysis with 1,2-ethanediamine. Their one-electron oxidation potentials are determined by differential pulse......,N,N',N'-tetra-n-alkyl-p-phenylenediamines, including a planar arrangement of the atoms linked to the two PD nitrogen atoms. Thus, the effect of chain size on the oxidation potential appears to be caused primarily by a simple electronic effect. The calculations indicate considerable reorientation of the dendrimer side chains on oxidation, presumably...

Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis.

Science.gov (United States)

Rim, You Seung; Lim, Hyun Soo; Kim, Hyun Jae

2013-05-01

We investigated the formation of ultraviolet (UV)-assisted directly patternable solution-processed oxide semiconductor films and successfully fabricated thin-film transistors (TFTs) based on these films. An InGaZnO (IGZO) solution that was modified chemically with benzoylacetone (BzAc), whose chelate rings decomposed via a π-π* transition as result of UV irradiation, was used for the direct patterning. A TFT was fabricated using the directly patterned IGZO film, and it had better electrical characteristics than those of conventional photoresist (PR)-patterned TFTs. In addition, the nitric acid (HNO3) and acetylacetone (AcAc) modified In2O3 (NAc-In2O3) solution exhibited both strong UV absorption and high exothermic reaction. This method not only resulted in the formation of a low-energy path because of the combustion of the chemically modified metal-oxide solution but also allowed for photoreaction-induced direct patterning at low temperatures.

Enhanced cathodoluminescence from InGaN/GaN light-emitting diodes with nanohole arrays fabricated using anodic aluminum-oxide masks

International Nuclear Information System (INIS)

Doan, M. H.; Lim, H.; Lee, J. J.; Nguyen, D. H.; Rotermund, F.; Mho, S. I.

2010-01-01

Blue InGaN/GaN light emitting diodes (LEDs) have been grown by using low-pressure metalorganic chemical vapor deposition. To improve the light extraction from the LEDs, we have fabricated nanohole arrays on top of the p-GaN layer by using anodic aluminum oxides as etch masks. The AAO membranes are fabricated by using a two-step anodization process in an oxalic-acid solution. Atomic force microscopy and field emission scanning electron microscopy show that the nanohole arrays formed on top of the LEDs have a quasi-hexagonal geometry. The cathodoluminescence measurements are used to investigate the light extraction from the nanopatterned samples. Cathodoluminescence intensity of a LED with the nanohole array is enhanced up to 10 times compared to that of a sample without a nanohole array. We also investigated the spatially-resolved luminescence profile around the nanoholes.

Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

International Nuclear Information System (INIS)

Mottern, Matthew L.; Tyholdt, Frode; Ulyashin, Alexander; Helvoort, Antonius T.J. van; Verweij, Henk; Bredesen, Rune

2007-01-01

The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10 -3 Ω cm prior to post-deposition treatments

Oxidizing attack process of uranium ore by a carbonated liquor

International Nuclear Information System (INIS)

Maurel, Pierre; Nicolas, Francois.

1981-01-01

A continuous process for digesting a uraniferous ore by oxidation with a recycling aqueous liquor containing alkaline carbonates and bicarbonates in solution as well as uranium in a concentration close to its solubility limit at digestion temperature, and of recuperation of the precipitated uranium within the solid phase remaining after digestion. The digestion is carried out by spraying oxygen into the hot reactional medium in order not only to permit oxidation of the uranium and its solubilization but also to ensure that the sulphides of impurities and organic substances present in the ore are oxidized [fr

Study on emission characteristics and reduction strategy of nitrous oxide during wastewater treatment by different processes.

Science.gov (United States)

Sun, Shichang; Bao, Zhiyuan; Sun, Dezhi

2015-03-01

Given the inexorable increase in global wastewater treatment, increasing amounts of nitrous oxide are expected to be emitted from wastewater treatment plants and released to the atmosphere. It has become imperative to study the emission and control of nitrous oxide in the various wastewater treatment processes currently in use. In the present investigation, the emission characteristics and the factors affecting the release of nitrous oxide were studied via full- and pilot-scale experiments in anoxic-oxic, sequencing batch reactor and oxidation ditch processes. We propose an optimal treatment process and relative strategy for nitrous oxide reduction. Our results show that both the bio-nitrifying and bio-denitrifying treatment units in wastewater treatment plants are the predominant sites for nitrous oxide production in each process, while the aerated treatment units are the critical sources for nitrous oxide emission. Compared with the emission of nitrous oxide from the anoxic-oxic (1.37% of N-influent) and sequencing batch reactor (2.69% of N-influent) processes, much less nitrous oxide (0.25% of N-influent) is emitted from the oxidation ditch process, which we determined as the optimal wastewater treatment process for nitrous oxide reduction, given the current technologies. Nitrous oxide emissions differed with various operating parameters. Controlling the dissolved oxygen concentration at a proper level during nitrification and denitrification and enhancing the utilization rate of organic carbon in the influent for denitrification are the two critical methods for nitrous oxide reduction in the various processes considered.

Equilibrium constant and nitrogen activity and the parameters of interaction eN(N), rN(N,Cr), rN(N,Mn) in high nitrogen steels of Fe-Cr-Mn-N type

International Nuclear Information System (INIS)

Svyazhin, A.G.; Siwka, J.; Rashev, T.

1999-01-01

In the paper a description of a thermodynamic of liquid solutions of Fe-Cr-Mn-N type with using a concept of parameters of an interaction has been presented. A temperature relationship of the equilibrium constant K N(Fe) and values of self interaction parameters e N (N) , r N (N,Cr) , r N (N,Mn) and t N (N,Cr,Cr) has been determined for mean values of temperatures of liquid metal equal 1990 K and 2090 K. By application of a theory of regular solutions those values were recalculated for a temperature 1873 K. (orig.)

Synthesis of Diopside by Solution Combustion Process Using Glycine Fuel

Science.gov (United States)

Sherikar, Baburao N.; Umarji, A. M.

Nano ceramic Diopside (CaMgSi2O6) powders are synthesized by Solution Combustion Process(SCS) using Calcium nitrate, Magnesium nitrate as oxidizer and glycine as fuel, fumed silica as silica source. Ammonium nitrate (AN) is used as extra oxidizer. Effect of AN on Diopside phase formation is investigated. The adiabatic flame temperatures are calculated theoretically for varying amount of AN according to thermodynamic concept and correlated with the observed flame temperatures. A “Multi channel thermocouple setup connected to computer interfaced Keithley multi voltmeter 2700” is used to monitor the thermal events during the process. An interpretation based on maximum combustion temperature and the amount of gases produced during reaction for various AN compositions has been proposed for the nature of combustion and its correlation with the characteristics of as synthesized powder. These powders are characterized by XRD, SEM showing that the powders are composed of polycrystalline oxides with crystallite size of 58nm to 74nm.

Solution processable organic/inorganic hybrid ultraviolet photovoltaic detector

Directory of Open Access Journals (Sweden)

Xiaopeng Guo

2016-05-01

Full Text Available Ultraviolet (UV photodetector is a kind of important optoelectronic device which can be widely used in scientific and engineering fields including astronomical research, environmental monitoring, forest-fire prevention, medical analysis, and missile approach warning etc. The development of UV detector is hindered by the acquirement of stable p-type materials, which makes it difficult to realize large array, low-power consumption UV focal plane array (FPA detector. Here, we provide a novel structure (Al/Poly(9,9-di-n-octylfuorenyl-2,7-diyl(PFO/ZnO/ITO to demonstrate the UV photovoltaic (PV response. A rather smooth surface (RMS roughness: 0.28 nm may be reached by solution process, which sheds light on the development of large-array, light-weight and low-cost UV FPA detectors.

Reaction intermediates in the catalytic Gif-type oxidation from nuclear inelastic scattering

Energy Technology Data Exchange (ETDEWEB)

Rajagopalan, S., E-mail: rajagopalan78@hotmail.com [Indira Gandhi Centre for Atomic Research, Materials Science Group (India); Asthalter, T., E-mail: t.asthalter@web.de [Universität Stuttgart, Institute of Physical Chemistry (Germany); Rabe, V.; Laschat, S. [Universität Stuttgart, Institute of Organic Chemistry (Germany)

2016-12-15

Nuclear inelastic scattering (NIS) of synchrotron radiation, also known as nuclear resonant vibrational spectroscopy (NRVS), has been shown to provide valuable insights into metal-centered vibrations at Mössbauer-active nuclei. We present a study of the iron-centered vibrational density of states (VDOS) during the first step of the Gif-type oxidation of cyclohexene with a novel trinuclear Fe{sub 3}(μ{sub 3}-O) complex as catalyst precursor. The experiments were carried out on shock-frozen solutions for different combinations of reactants: Fe{sub 3}(μ{sub 3}-O) in pyridine solution, Fe{sub 3}(μ{sub 3}-O) plus Zn/acetic acid in pyridine without and with addition of either oxygen or cyclohexene, and Fe{sub 3}(μ{sub 3}-O)/Zn/acetic acid/pyridine/cyclohexene (reaction mixture) for reaction times of 1 min, 5 min, and 30 min. The projected VDOS of the Fe atoms was calculated on the basis of pseudopotential density functional calculations. Two possible reaction intermediates were identified as [Fe{sup (III)}(C{sub 5}H{sub 5}N){sub 2}(O{sub 2}CCH{sub 3}){sub 2}]{sup +} and Fe{sup (II)}(C{sub 5}H{sub 5}N){sub 4}(O{sub 2}CCH{sub 3}){sub 2}, yielding evidence that NIS (NRVS) allows to identify the presence of iron-centered intermediates also in complex reaction mixtures.

Ground state solutions for Choquard type equations with a singular potential

Directory of Open Access Journals (Sweden)

Tao Wang

2017-02-01

Full Text Available This article concerns the Choquard type equation $$ -\\Delta u+V(xu=\\Big(\\int_{\\mathbb{R}^N}\\frac{|u(y|^p}{|x-y|^{N-\\alpha}}dy\\Big |u|^{p-2}u,\\quad x\\in \\mathbb{R}^N, $$ where $N\\geq3$, $\\alpha\\in ((N-4_+,N$, $2\\leq p <(N+\\alpha/(N-2$ and V(x is a possibly singular potential and may be unbounded below. Applying a variant of the Lions' concentration-compactness principle, we prove the existence of ground state solution of the above equations.

3,3′-Bicarbazole-Based Host Molecules for Solution-Processed Phosphorescent OLEDs

Directory of Open Access Journals (Sweden)

Jungwoon Kim

2018-04-01

Full Text Available Solution-processed organic light-emitting diodes (OLEDs are attractive due to their low-cost, large area displays, and lighting features. Small molecules as well as polymers can be used as host materials within the solution-processed emitting layer. Herein, we report two 3,3′-bicarbazole-based host small molecules, which possess a structural isomer relationship. 9,9′-Di-4-n-butylphenyl-9H,9′H-3,3′-bicarbazole (BCz-nBuPh and 9,9′-di-4-t-butylphenyl-9H,9′H-3,3′-bicarbazole (BCz-tBuPh exhibited similar optical properties within solutions but different photoluminescence within films. A solution-processed green phosphorescent OLED with the BCz-tBuPh host exhibited a high maximum current efficiency and power efficiency of 43.1 cd/A and 40.0 lm/W, respectively, compared to the device with the BCz-nBuPh host.

Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Brandt, Riley E., E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Young, Matthew; Dameron, Arrelaine; Teeter, Glenn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Park, Helen Hejin; Chua, Danny; Gordon, Roy G. [Harvard University, Cambridge, Massachusetts 02139 (United States)

2014-12-29

The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.

Science.gov (United States)

Fan, Congcheng; Zoombelt, Arjan P; Jiang, Hao; Fu, Weifei; Wu, Jiake; Yuan, Wentao; Wang, Yong; Li, Hanying; Chen, Hongzheng; Bao, Zhenan

2013-10-25

Organic single-crystalline p-n junctions are grown from mixed solutions. First, C60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cation incorporation into zirconium oxide in LiOH, NaOH, and KOH solutions

International Nuclear Information System (INIS)

Jeong, Y.H.; Kim, K.H.; Baek, J.H.

1999-01-01

To investigate the cation incorporation into zirconium oxide, SIMS analysis was performed on the specimens prepared to have an equal oxide thickness in LiOH, NaOH, and KOH solutions. Even though they have an equal oxide thickness in LiOH, NaOH, and KOH solutions, the penetration depth of cation into the oxide decreased with an increase in the ionic radius of cation. The cation is considered to control the corrosion in alkali hydroxide solutions and its effect is dependent on the concentration of alkali and the oxide thickness. The slight enhancement of the corrosion rate at a low concentration is thought to be caused by cation incorporation into oxide, while the significant acceleration at a high concentration is due to the transformation of oxide microstructures that would be also induced by cation incorporation into oxide. (orig.)

9% Cr steel high temperature oxidation. Solutions investigated for improving corrosion resistance of the steel

Energy Technology Data Exchange (ETDEWEB)

Evin, Harold Nicolas; Heintz, Olivier; Chevalier, Sebastien [UMR 5209 CNRS-Bourgogne Univ. (France). Lab. Interdisciplinaire Carnot de Bourgogne; Foejer, Cecilia; Jakani, Saad; Dhont, Annick; Claessens, Serge [OCAS N.V. ArcelorMittal Global R and D, Gent (Belgium)

2010-07-01

The improvement of high temperature oxidation resistance of low chromium content steels, such as T/P91, is of great interest in regards with their application in thermal power generating plants. Indeed, they possess good creep properties, but are facing their limits of use at temperature higher than 600 C, due to accelerated corrosion phenomena. Good knowledge of the mechanisms involved during their oxidation process is needed to prevent the degradation of the materials and to extend life time of the power plants components. Oxide layers thermally grown, on 9% Cr steels (provided by OCAS N.V), during isothermal tests between 600 C and 750 C in laboratory air under atmospheric pressure were investigated, by Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The oxidation behaviour appeared very limited at 750 C, due to the presence of a breakaway, which can be linked to iron porous oxide grown over the surface of the samples. ''In situ'' X-ray Photoelectron spectroscopy (XPS) analyses were performed in air at 600 C after short exposures (between 5 min and 25 h). A complex mixture of iron oxide, Cr{sub 2}O{sub 3} and Cr (VI) species were characterized in the scales. The in-situ analyses were compared and related to XPS analyses performed on thick oxide scales formed on samples oxidized in air at 600 C for 100h. An oxidation mechanism is then proposed to understand the oxide scale growth in the temperature range 600 - 750 C. The second step of this study consists in improving the high temperature corrosion resistance of these steels without modifying their mechanical properties. Thus several solutions were investigated such as MOCVD coatings, pack cementation coatings, and tested in cycle conditions prior. (orig.)

Oxidation inhibitors for aqueous MEA solutions used in a post-combustion CO{sub 2} capture process

Energy Technology Data Exchange (ETDEWEB)

Carrette, P.L.; Bonnard, L. [IFP, Solaize (France); Delfort, B. [IFP, Rueil-Malmaison (France)

2009-07-01

This study examined the feasibility of using an aqueous solution of MEA as a solvent for post- combustion capture of carbon dioxide (CO{sub 2}). MEA is inexpensive, largely available, non toxic and highly effective because of its high capacity for CO{sub 2} capture and its fast reaction kinetics. However, significant oxidative degradation occurs when MEA is exposed to oxygen. Oxidation of MEA is not only a source of solvent consumption but also creates volatile compounds such as ammonia and carboxylic acids that can cause corrosion. As such, degradation control is a major challenge. Oxidative degradation can potentially be solved by the use of antioxidant additives. This presentation reported on a laboratory scale evaluation test of MEA degradation associated with analysis of degradation products. Different antioxidant additives were then evaluated. Conventional antioxidant additives were found to be poorly active or inactive, and some even exhibited a pronounced effect upon degradation. New classes of additives have been found to be effective in considerably reducing degradation.

Facile synthesis of birnessite-type manganese oxide nanoparticles as supercapacitor electrode materials.

Science.gov (United States)

Liu, Lihu; Luo, Yao; Tan, Wenfeng; Zhang, Yashan; Liu, Fan; Qiu, Guohong

2016-11-15

Manganese oxides are environmentally benign supercapacitor electrode materials and, in particular, birnessite-type structure shows very promising electrochemical performance. In this work, nanostructured birnessite was facilely prepared by adding dropwise NH2OH·HCl to KMnO4 solution under ambient temperature and pressure. In order to fully exploit the potential of birnessite-type manganese oxide electrode materials, the effects of specific surface area, pore size, content of K(+), and manganese average oxidation state (Mn AOS) on their electrochemical performance were studied. The results showed that with the increase of NH2OH·HCl, the Mn AOS decreased and the corresponding pore sizes and specific surface area of birnessite increased. The synthesized nanostructured birnessite showed the highest specific capacitance of 245Fg(-1) at a current density of 0.1Ag(-1) within a potential range of 0-0.9V, and excellent cycle stability with a capacitance retention rate of 92% after 3000 cycles at a current density of 1.0Ag(-1). The present work implies that specific capacitance is mainly affected by specific surface area and pore volume, and provides a new method for the facile preparation of birnessite-type manganese oxide with excellent capacitive performance. Copyright © 2016 Elsevier Inc. All rights reserved.

Study of the removal of cesium from aqueous solutions by graphene oxide

International Nuclear Information System (INIS)

Bueno, Vanessa N.; Rodrigues, Debora F.; Vitta, Patricia B. Di

2013-01-01

Graphene oxide, used in this work, was synthesized from the oxidation of graphite by Hummer method. The experiments were performed in batch and analyzed for the following parameters: contact time, pH, cesium ion concentration in aqueous solution and removing capacity of the graphene oxide. After the experiments the samples were vacuum filtered and the remaining cesium in solution was quantified by Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES). The equilibrium was reached after 60 minutes of contact in neutral solution. The percentage of removal was around 80%

Development of Annealing-Free, Solution-Processable Inverted Organic Solar Cells with N-Doped Graphene Electrodes using Zinc Oxide Nanoparticles.

Science.gov (United States)

Jung, Seungon; Lee, Junghyun; Seo, Jihyung; Kim, Ungsoo; Choi, Yunseong; Park, Hyesung

2018-02-14

An annealing-free process is considered as a technological advancement for the development of flexible (or wearable) organic electronic devices, which can prevent the distortion of substrates and damage to the active components of the device and simplify the overall fabrication process to increase the industrial applications. Owing to its outstanding electrical, optical, and mechanical properties, graphene is seen as a promising material that could act as a transparent conductive electrode for flexible optoelectronic devices. Owing to their high transparency and electron mobility, zinc oxide nanoparticles (ZnO-NP) are attractive and promising for their application as charge transporting materials for low-temperature processes in organic solar cells (OSCs), particularly because most charge transporting materials require annealing treatments at elevated temperatures. In this study, graphene/annealing-free ZnO-NP hybrid materials were developed for inverted OSC by successfully integrating ZnO-NP on the hydrophobic surface of graphene, thus aiming to enhance the applicability of graphene as a transparent electrode in flexible OSC systems. Chemical, optical, electrical, and morphological analyses of ZnO-NPs showed that the annealing-free process generates similar results to those provided by the conventional annealing process. The approach was effectively applied to graphene-based inverted OSCs with notable power conversion efficiencies of 8.16% and 7.41% on the solid and flexible substrates, respectively, which promises the great feasibility of graphene for emerging optoelectronic device applications.

Cyclopentadithiophene–naphthalenediimide polymers; synthesis, characterisation, and n-type semiconducting properties in field-effect transistors and photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Li, Chun-Han [Department of Chemical Engineering, Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing-Hua University, 101, Sec. 2, Kuang-Fu Road, Hsin-Chu 30013, Taiwan (China); Kettle, Jeff [School of Electronics, Bangor University, Dean st., Bangor, Gwynedd, LL57 1UT Wales (United Kingdom); Horie, Masaki, E-mail: mhorie@mx.nthu.edu.tw [Department of Chemical Engineering, Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing-Hua University, 101, Sec. 2, Kuang-Fu Road, Hsin-Chu 30013, Taiwan (China)

2014-04-01

The synthesis, characterisation, and device performance of a series of cyclopentadithiophene (CPDT)-naphthalenediimide (NDI) donor-acceptor-donor (D-A-D) polymers is reported. The monomers with various alkyl chains are synthesised via direct arylation using palladium complex catalyst. The monomers are then polymerised by oxidative polymerisation using FeCl{sub 3} to provide high molecular weight polymers (M{sub n} = 21,800–76,000). The polymer films show deep-red absorption including near-infrared region up to 1100 nm to give optical bandgap of approximately 1.16 eV. The polymers exhibit only n-type semiconducting properties giving the highest electron mobility of 9 × 10{sup -3} cm{sup 2} V{sup −1} s{sup −1} in organic field-effect transistors (OFETs). Organic photovoltaic (OPV) devices are fabricated from solutions of the polymers as acceptors and poly(3-hexylthiophene) (P3HT) as a donor. - Highlights: • Cyclopentadithiophene–naphthalenediimide oligomers were prepared by direct arylation. • The oligomers were polymerised by oxidative reaction using iron(III)chloride. • The polymer films show deep-red absorption up to 1100 nm with a bandgap of 1.1 eV. • The polymers exhibit only n-type semiconducting properties in OFETs and OPVs.

Application of biohydrometallurgy to uranium ore processing

International Nuclear Information System (INIS)

Zhang Jiantang

1989-01-01

The development on application of biohydrometallargy to uranium ore processing is briefly introduced. The device designed for oxidizing ferrous ions in solution by using biomembrane, several bacterial leaching methods and the experimental results are given in this paper. The presented biohydrometallurgical process for recovering uranium includes bacterial leaching following by adsorption using tertiary amine resin 351 and oxidation of ferrous ions in the device with biomembranes. This process brings more economical benefits for treating silicate type original ores. The prospects on application of biogydrometallyurgy to solution mining is also discussed

Topical 5% potassium permanganate solution accelerates the healing process in chronic diabetic foot ulcers.

Science.gov (United States)

Delgado-Enciso, Iván; Madrigal-Perez, Violeta M; Lara-Esqueda, Agustin; Diaz-Sanchez, Martha G; Guzman-Esquivel, Jose; Rosas-Vizcaino, Luis E; Virgen-Jimenez, Oscar O; Kleiman-Trujillo, Juleny; Lagarda-Canales, Maria R; Ceja-Espiritu, Gabriel; Rangel-Salgado, Viridiana; Lopez-Lemus, Uriel A; Delgado-Enciso, Josuel; Lara-Basulto, Agustin D; Soriano Hernández, Alejandro D

2018-02-01

Potassium permanganate has been reported to be an effective treatment for certain types of wounds. The aim of the present study was to evaluate the use of potassium permanganate in the treatment of diabetic foot ulcers. A single-blind, randomized, controlled clinical trial was conducted on patients with type 2 diabetes mellitus that presented with a foot ulcer persisting for >3 months. The control group (n=10) was treated with the current standard treatment, which comprises of measures for reducing pressure in the ulcerated area, daily cleansing of the ulcer with potable water and antiseptic wash solution, and the application of a disinfectant solution on the entire surface area of the ulcer; while the intervention group (n=15) received the standard treatment plus 5% topical potassium permanganate solution applied once a day for 21 days. In the intervention group, 1 patient did not tolerate the treatment and was eliminated from the study on the first day. The remaining patients tolerated the interventions well. At the end of the treatment period, ulcers in the control group had decreased by 38% whereas those in the intervention group decreased by 73% (Ppermanganate is well tolerated and significantly accelerates the healing process of diabetic foot ulcers.

Optimization of strontium adsorption from aqueous solution using (mn-Zr) oxide-pan composite spheres

International Nuclear Information System (INIS)

Inan, S.; Altas, Y.

2009-01-01

The processes based on adsorption and ion exchange have a great role for the pre-concentration and separation of toxic, long lived radionuclides from liquid waste. In Nuclear waste management, the removal of long lived, radiotoxic isotopes from radioactive waste such as strontium reduces the storage problems and facilitates the disposal of the waste. Depending on the waste type, a variety of adsorbents and/or ion exchangers are used. Due to the amorphous structure of hydrous oxides and their mixtures, they don't have reproducible properties. Besides, obtained powders are very fine particles and they can cause operational problems such as pressure drop and filtration. Therefore they are not suitable for column applications. These reasons have recently expedited the study on the preparation of organic-inorganic composite adsorbent beads for industrial applications. PAN, as a stable and porous support for fine particles, provides the utilization of ion exchangers in large scale column applications. The utilization of PAN as a support material with many inorganic ion exchangers was firstly achieved by Sebesta in the beginning of 1990's. Later on, PAN based composite ion exchangers were prepared and used for the removal of radionuclides and heavy metal ions from aqueous solution and waste waters. In this study, spherical (Mn-Zr)oxide-PAN composite were prepared for separation of strontium from aqueous solution in a wide pH range. Sr 2 + adsorption of composite adsorbent was optimized by using experimental design 'Central Composite Design' model.

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

Science.gov (United States)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Metal Oxide Supported Vanadium Substituted Keggin Type Polyoxometalates as Catalyst For Oxidation of Dibenzothiophene

Science.gov (United States)

Lesbani, Aldes; Novri Meilyana, Sarah; Karim, Nofi; Hidayati, Nurlisa; Said, Muhammad; Mohadi, Risfidian; Miksusanti

2018-01-01

Supported polyoxometalatate H4[γ-H2SiV2W10O40]·nH2O with metal oxide i.e. silica, titanium, and tantalum was successfully synthesized via wet impregnation method to form H4[γ-H2SiV2W10O40]·nH2O-Si, H4[γ-H2SiV2W10O40]·nH2O-Ti, and H4[γ-H2SiV2W10O40]·nH2O-Ta. Characterization was performed using FTIR spectroscopy, X-Ray analyses, and morphology analyses using SEM. All compounds were used as the catalyst for desulfurization of dibenzothiophene (DBT). Silica and titanium supported polyoxometalate H4[γ-H2SiV2W10O40]·nH2O better than tantalum due to retaining crystallinity after impregnation process. On the other hand, compound H H4[γ-H2SiV2W10O40]·nH2O-Ta showed high catalytic activity than other supported metal oxides for desulfurization of DBT. Optimization desulfurization process resulted in 99% conversion of DBT under a mild condition at 70 °C, 0.1 g catalyst, and reaction for 3 hours. Regeneration studies showed catalyst H4[γ-H2SiV2W10O40]·nH2O-Ti was remaining catalytic activity for desulfurization of DBT.

GC-MS analysis of ethanol solution with D2O as solvent implanted by low energy N+

International Nuclear Information System (INIS)

Shi Huaibin; Shao Chunlin; Yu Zengliang

2001-10-01

Low energy ions were produced by N 2 glow-discharge. The positive ones were accelerated into ethanol solution with D 2 O as solvent to induce chemical reactions. GC-MS analysis showed that DCH 2 CH 2 OH, HOCH 2 CH 2 OD were produced by such kind of implantation. Thus, it was proved that the reaction was mainly caused by radicals generated by decomposition of water molecules, D . and . OD played an important role in the process. Meanwhile, CH 3 COOD and HOCH 2 CH 2 ND 2 were also found in the products, so it was concluded that the reaction was carried out under an oxidative atmosphere, which was thought to be probably related to . OD radicals, too. The capture of D from D 2 O by N + to form . ND 2 radicals was not only an initial step to produce HOCH 2 CH 2 ND 2 but also served as a probable pattern for 'nitrogen deposition'. All these were helpful to reveal the mechanism of the reaction induced by low energy N + implanting into solution samples

High mobility solution-processed hybrid light emitting transistors

International Nuclear Information System (INIS)

Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

2014-01-01

We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

Photochemical oxidation of americium(3) in bicarbonate-carbonate solutions saturated with N2O

International Nuclear Information System (INIS)

Shilov, V.P.; Yusov, A.B.

1993-01-01

The influence of UV radiation on 1.1x10 -4 mol/l Am(3) in bicarbonate-carbonate solutions of sodium and potassium saturated with N 2 O was studied by spectrographic method. In all the cases Am(4) was formed as a primary product. Initial rate of Am(4) accumulation remains stable in solutions up to HCO 3 - or HCO 3 - +CO 3 2- concentration of approximately 1.5 mol/l, but it decreases in case of their higher concentration. In solutions with pH 8.4-10 Am(4) disproportionates at a slow rate and the method suggested permits attaining practically 100% yield of it

LITERATURE REVIEW FOR OXALATE OXIDATION PROCESSES AND PLUTONIUM OXALATE SOLUBILITY

Energy Technology Data Exchange (ETDEWEB)

Nash, C.

2012-02-03

A literature review of oxalate oxidation processes finds that manganese(II)-catalyzed nitric acid oxidation of oxalate in precipitate filtrate is a viable and well-documented process. The process has been operated on the large scale at Savannah River in the past, including oxidation of 20 tons of oxalic acid in F-Canyon. Research data under a variety of conditions show the process to be robust. This process is recommended for oxalate destruction in H-Canyon in the upcoming program to produce feed for the MOX facility. Prevention of plutonium oxalate precipitation in filtrate can be achieved by concentrated nitric acid/ferric nitrate sequestration of oxalate. Organic complexants do not appear practical to sequester plutonium. Testing is proposed to confirm the literature and calculation findings of this review at projected operating conditions for the upcoming campaign. H Canyon plans to commence conversion of plutonium metal to low-fired plutonium oxide in 2012 for eventual use in the Mixed Oxide Fuel (MOX) Facility. The flowsheet includes sequential operations of metal dissolution, ion exchange, elution, oxalate precipitation, filtration, and calcination. All processes beyond dissolution will occur in HB-Line. The filtration step produces an aqueous filtrate that may have as much as 4 M nitric acid and 0.15 M oxalate. The oxalate needs to be removed from the stream to prevent possible downstream precipitation of residual plutonium when the solution is processed in H Canyon. In addition, sending the oxalate to the waste tank farm is undesirable. This report addresses the processing options for destroying the oxalate in existing H Canyon equipment.

Behaviour of zirconium oxidation and is oxide films in alkali halide solutions as studied by electrochemical techniques

International Nuclear Information System (INIS)

Saleh, H.E.M.

1996-01-01

Study of the properties of Zr electrode and the oxide films that cover the metal surface is of extreme importance due to their wide applications in chemical and nuclear industry. In this thesis the electrochemical behaviour of Zr electrode in alkali halide solutions and with various surface conditions was studied, Also the galvanostatic oxidation of the metal in addition to the open circuit and impedance measurements were employed. Chapter I is a literature survey of the electrochemistry of Zr metal with particular emphasis on the stability and growth process of Zr in different media. Chapter II contains the experimental part, including details of the electrochemical techniques used in the measurements. The electrode impedance was always balanced as a series capacitance Cs and resistance Rs.Chapter III includes the experimental results and discussion. It is divide into sections, A and B. Section A includes the results of some experimental parameters which affect the reactivity of the oxide growth process on the zirconium surface, such as surface pre - treatment, electrolyte composition, the effect of different alkali halide anions, as well as the triiodide ion. 9 tabs.,26 figs.,67 refs

Oxidation of ammonium sulfite in aqueous solutions using ozone technology

Science.gov (United States)

Li, Yue; Shang, Kefeng; Lu, Na; Li, Jie; Wu, Yan

2013-03-01

How to deal with unstable ammonium sulfite, the byproduct of flue gas desulfuration by ammonia absorption methods, has been a difficult problem in recent years. Oxidation of ammonium sulfite in aqueous solutions using ozone produced by a surface discharge system was investigated in the paper. The oxidation efficiency of ammonium sulfite by ozone and traditional air aeration were compared, and the factors including ozone concentration, gas flow rate, initial concentration of ammonium sulfite solution and reaction temperature were discussed. The results show that the oxidation efficiency of ammonium sulfite by ozone technology reached nearly 100% under the optimum conditions, which had a significant increase compared with that by air aeration.

Fundamentals of Passive Oxidation In SiC and Si3N4

Science.gov (United States)

Thomas-Ogbuji, Linus U.

1998-01-01

The very slow oxidation kinetics of silicon carbide and silicon nitride, which derive from their adherent and passivating oxide films, has been explored at length in a broad series of studies utilizing thermogravimetric analysis, electron and optical micrography, energy dispersive spectrometry, x-ray diffractometry, micro-analytical depth profiling, etc. Some interesting microstructural phenomena accompanying the process of oxidation in the two materials will be presented. In Si3N4 the oxide is stratified, with an SiO2 topscale (which is relatively impervious to O2)underlain by a coherent subscale of silicon oxynitride which is even less permeable to O2- Such "defence in depth" endows Si3N4 with what is perhaps the highest oxidation resistance of any material, and results in a unique set of oxidation processes. In SiC the oxidation reactions are much simpler, yet new issues still emerge; for instance, studies involving controlled devitrification of the amorphous silica scale confirmed that the oxidation rate of SiC drops by more than an order of magnitude when the oxide scale fully crystallizes.

Solid-phase extraction of plutonium in various oxidation states from simulated groundwater using N-benzoylphenylhydroxylamine

International Nuclear Information System (INIS)

Perevalov, S.A.; Malofeeva, G.I.; Kuzovkina, E.V.; Spivakov, B.Ya.

2013-01-01

Solid-phase extraction of plutonium in different individual and mixed oxidation states from simulated groundwater (pH 8.5) was studied. The extraction of plutonium species was carried out in a dynamic mode using DIAPAK C16 cartridges modified by N-benzoylphenylhydroxylamine (BPHA). It was shown that the extent of recovery depends on the oxidation state of plutonium. The extraction of Pu(IV) was at the level of 98-99% regardless of the volume and flow-rate of the sample solution. Pu(V) was extracted by 90-95% and 75-80% from 10- and 100-mL aliquots of the samples, respectively, whereas the extraction of Pu(VI) did not exceed 45-50%. An equimolar mixture of Pu(IV), Pu(V), and Pu(VI) was extracted by 74%. The distribution coefficients (K d ) and kinetic exchange capacities (S) of plutonium in various oxidation states were measured. It was found that during the sorption process, Pu(V) was reduced to Pu(IV) by 80-90% after an hour-long contact with the solid phase. Pu(VI) is reduced to Pu(V) by 34% and to Pu(IV) by 55%. In the case of mixed-valent solution of plutonium, only Pu(V) and Pu(IV) were found in the effluents. (author)

Improved thermal stability and oxidation resistance of Al–Ti–N coating by Si addition

International Nuclear Information System (INIS)

Chen, Li; Yang, Bing; Xu, Yuxiang; Pei, Fei; Zhou, Liangcai; Du, Yong

2014-01-01

Addition of Si is very effective in upgrading the machining performance and thermal properties of Al–Ti–N coating. Here, we concentrate on the thermal stability and oxidation resistance of Al–Ti–Si–N coating. Alloying with Si favors the growth of wurtzite phase, and thereby causes a drop in hardness from ∼ 34.5 to 28.7 GPa. However, Si-containing coating retards the formation of w-AlN during thermal annealing, and thereby behaves a high hardness value of ∼ 31.3 GPa after annealing at T a = 1100 °C. After 10 h exposure in air at 850 °C, Al–Ti–N coating is fully oxidized. Incorporation of Si significantly improves the oxidation resistance of Al–Ti–N due to the combined effects with the promoted formation of Al-oxide rich top-scale and retarded transformation of anatase (a-) TiO 2 into rutile (r-) TiO 2 , where only ∼ 1.43 μm oxide scale is shown after oxidation at 1100 °C for 15 h. Noticeable is that the worst oxidation resistance of Al–Ti–Si–N coating in the temperature range from 800 to 1100 °C is obtained at 950 °C with oxide scale of ∼ 1.76 μm due to the fast formation of r-TiO 2 . Additionally, a pre-oxidation at 1000 °C has a positive effect on the oxidation resistance of Al–Ti–Si–N coating, which is attributed to the formation of Al-oxide rich top-scale, and thus inhibits the outward diffusion of metal atoms and inward diffusion of O. - Highlights: • Si as a substitutional solid solution and via the formation of a-Si 3 N 4 coexists. • Si addition favors the growth of wurtzite phase and causes a decreased hardness. • Alloying with Si improves the oxidation resistance of AlTiN. • AlTiSiN behaves the worst oxidation resistance at 950 °C from 800 to 1100 °C. • A pre-oxidation at 1000 °C improves the oxidation resistance of AlTiSiN coating

Hybrid process for nitrogen oxides reduction

Energy Technology Data Exchange (ETDEWEB)

Epperly, W.R.; Sprague, B.N.

1991-09-10

This patent describes a process for reducing the nitrogen oxide concentration in the effluent from the combustion of a carbonaceous fuel. It comprises introducing into the effluent a first treatment agent comprising a nitrogenous composition selected from the group consisting of urea, ammonia, hexamethylenetetramine, ammonium salts of organic acids, 5- or 6-membered heterocyclic hydrocarbons having at least one cyclic nitrogen, hydroxy amino hydrocarbons, NH{sub 4}-lignosulfonate, fur-furylamine, tetrahydrofurylamine, hexamethylenediamine, barbituric acid, guanidine, guanidine carbonate, biguanidine, guanylurea sulfate, melamine, dicyandiamide, biuret, 1.1{prime}-azobisformamide, methylol urea, methylol urea-urea condensation product, dimethylol urea, methyl urea, dimethyl urea, calcium cyanamide, and mixtures thereof under conditions effective to reduce the nitrogen oxides concentration and ensure the presence of ammonia in the effluent; introducing into the effluent a second treatment agent comprising an oxygenated hydrocarbon at an effluent temperature of about 500{degrees} F. to about 1600{degrees} F. under conditions effective to oxidize nitric oxide in the effluent to nitrogen dioxide and ensure the presence of ammonia at a weight ratio of ammonia to nitrogen dioxide of about 1:5 to about 5:1; and contacting the effluent with an aqueous scrubbing solution having a pH of 12 or lower under conditions effective to cause nitrogen dioxide to be absorbed therein.

Coupling mechanism between wear and oxidation processes of 304 stainless steel in hydrogen peroxide environments.

Science.gov (United States)

Dong, Conglin; Yuan, Chengqing; Bai, Xiuqin; Li, Jian; Qin, Honglin; Yan, Xinping

2017-05-24

Stainless steel is widely used in strongly oxidizing hydrogen peroxide (H 2 O 2 ) environments. It is crucial to study its wear behaviour and failure mode. The tribological properties and oxidation of 304 stainless steel were investigated using a MMW-1 tribo-tester with a three-electrode setup in H 2 O 2 solutions with different concentrations. Corrosion current densities (CCDs), coefficients of frictions (COFs), wear mass losses, wear surface topographies, and metal oxide films were analysed and compared. The results show that the wear process and oxidation process interacted significantly with each other. Increasing the concentration of H 2 O 2 or the oxidation time was useful to form a layer of integrated, homogeneous, compact and thick metal oxide film. The dense metal oxide films with higher mechanical strengths improved the wear process and also reduced the oxidation reaction. The wear process removed the metal oxide films to increase the oxidation reaction. Theoretical data is provided for the rational design and application of friction pairs in oxidation corrosion conditions.

Mitigating climate change through the understanding of Nitrous Oxide (N2O) consumption processes in peat lands

Science.gov (United States)

Akrami, N.; Barker, X. Z.; Horwath, W. R.

2017-12-01

Nitrous Oxide (N2O) with global warming potential of 298 over a 100-year horizon is one of the most potent green house gases. In the United States, agriculture share to N2O emissions is over 70%. Peat lands, however, are being considered as both sources and sinks of greenhouse gases. N2O emissions are a product of both production and consumption processes. However, there is still a lack of understanding of N2O consumption processes in soils. In this work, the potential of re-wetted peat lands planted to rice in Sacramento-San Joaquin Delta, California, to act as a potential sink for N2O is being evaluated. Four peat land soils with 1%, 5%, 11% and 23% of organic carbon have been anaerobically incubated with different water contents (15%, 30%, 50%, 75% and 100% of their water holding capacity). 15N-N2O gas has been injected to the headspace of experiment jars and the production and consumption rate of 15N-N2O, 15N-N2 and production rate of Carbon Dioxide (CO2) and Methane (CH4) along with dissolved Nitrate (NO3-), Nitrite (NO2-), Ammonium (NH4+), Iron (II) and Iron (III) concentration has been quantified. Our results show promising N2O consumption rates under high carbon content and relatively high water content treatments. This research introduces organic carbon and water content as two major criteria in N2O consumption processes in peat lands that make it a potential hotspot for climate changes mitigation through adopting effective management practices to decrease greenhouse gas emissions.

Mechanism of plutonium metal dissolution in HNO3-HF-N2H4 solution

International Nuclear Information System (INIS)

Karraker, D.G.

1985-01-01

An oxidation-reduction balance of the products of the dissolution of plutonium metal and alloys in HNO 3 -HF-N 2 H 4 solution shows that the major reactions during dissolution are the reduction of nitrate to NH 3 , N 2 and N 2 O by the metal, and the oxidation of H free radicals to NH 3 by N 2 H 4 . Reactions between HNO 3 and N 2 H 4 produce varying amounts of HN 3 . The reaction rate is greater for delta-Pu than alpha-Pu, and is increased by higher concentrations of HF and HNO 3 . The low yield of reduced nitrogen species indicates that nitrate is reduced on the metal surface without producing a significant concentration of species that react with N 2 H 4 . It is conjectured that intermediate Pu valences and electron transfer within the metal are involved. 7 refs., 3 tabs

Combined transuranic-strontium extraction process

Science.gov (United States)

Horwitz, E. Philip; Dietz, Mark L.

1992-01-01

The transuranic (TRU) elements neptunium, plutonium and americium can be separated together with strontium from nitric acid waste solutions in a single process. An extractant solution of a crown ether and an alkyl(phenyl)-N,N-dialkylcarbanylmethylphosphine oxide in an appropriate diluent will extract the TRU's together with strontium, uranium and technetium. The TRU's and the strontium can then be selectively stripped from the extractant for disposal.

A Simple Solution to Type Specialization

DEFF Research Database (Denmark)

Danvy, Olivier

1998-01-01

Partial evaluation specializes terms, but traditionally this specialization does not apply to the type of these terms. As a result, specializing, e.g., an interpreter written in a typed language, which requires a “universal” type to encode expressible values, yields residual programs with type tags...... all over. Neil Jones has stated that getting rid of these type tags was an open problem, despite possible solutions such as Torben Mogensen's “constructor specialization.” To solve this problem, John Hughes has proposed a new paradigm for partial evaluation, “Type Specialization”, based on type...... inference instead of being based on symbolic interpretation. Type Specialization is very elegant in principle but it also appears non-trivial in practice. Stating the problem in terms of types instead of in terms of type encodings suggests a very simple type-directed solution, namely, to use a projection...

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n{sup ++}/n regions

Energy Technology Data Exchange (ETDEWEB)

Dimassi, Wissem; Jafel, Hayet; Lajnef, Mohamed; Ali Kanzari, M.; Bouaicha, Mongi; Bessais, Brahim; Ezzaouia, Hatem [Laboratoire de Photovoltaique, Centre de Recherche et des Technologies de l' Energie, PB: 95, Hammam Lif 2050 (Tunisia)

2011-06-15

The realization of screen-printed contacts on silicon solar cells requires highly doped regions under the fingers and lowly doped and thin ones between them. In this work, we present a low-cost approach to fabricate selective emitter (n{sup ++}/n doped silicon regions), using oxidized porous silicon (ox-PS) as a mask. Micro-periodic fingers were opened on the porous silicon layer using a micro groove machining process. Optimized phosphorous diffusion through the micro grooved ox-PS let us obtain n{sup ++} doped regions in opened zones and n doped large regions underneath the ox-PS layer. The dark I-V characteristics of the obtained device and Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer show the possibility to use PS as a dielectric layer. The Light Beam Induced Current (LBIC) mapping of the realized device, confirm the presence of a micro periodic n{sup ++}/n type structure. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Iron oxidation in different types of groundwater of Western Siberia

Energy Technology Data Exchange (ETDEWEB)

Serikov, Leonid V.; Tropina, Elena A.; Shiyan, Liudmila N. [Tomsk Polytechnic Univ., Tomsk (Russian Federation); Frimmel, Fritz H.; Metreveli, George; Delay, Markus [Univ. of Karlsruhe, Engler-Bunte-Inst. (Germany)

2009-04-15

measuring the optical density using a UV-Vis spectrometer. Results Ozone showed, as expected, a faster oxidation of Fe (II) than air oxygen. The rate constants for Fe(II) oxidation were not much different for the waters of A and B types when the same oxidation process was used. However, the removal of iron after oxidation and filtration was higher in the water of A type than in the water of B type. No evidence for the formation of soluble complexes between iron and humic substances were found. In the water of A type, the coagulation process started at pH=4.5 and accelerated with increasing pH value. In the water of B type, the coagulation of colloids occurred only at pH = 11 and higher. (orig.)

Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

Science.gov (United States)

Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

2007-10-01

In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

Interactions of hydrazine, ferrous sulfamate, sodium nitrite, and nitric acid in nuclear fuel processing solutions

International Nuclear Information System (INIS)

Gray, L.W.

1977-03-01

Hydrazine and ferrous sulfamate are used as reductants in a variety of nuclear fuel processing solutions. An oxidant, normally sodium nitrite, must frequently be added to these nitric acid solutions before additional processing can proceed. The interactions of these four chemicals have been studied under a wide variety of conditions using a 2/sup p/ factorial experimental design to determine relative reaction rates for desired reactions and side reactions. Evidence for a hydrazine-stabilized, sulfamic acid--nitrous acid intermediate was obtained; this intermediate can hydrolyze to ammonia or decompose to nitrogen. The oxidation of Fe 2+ by NO 2 - was shown to proceed at about the same rate as the scavenging of NO 2 - by sulfamic acid. Various side reactions are discussed

Chemical solution deposition of functional oxide thin films

CERN Document Server

Schneller, Theodor; Kosec, Marija

2014-01-01

Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

Optimization of leaching process for sum of rare earth and calcium oxides

International Nuclear Information System (INIS)

Troyanier, L.S.; Elunkina, Z.A.; Nikonov, V.N.; Lobov, V.I.

1978-01-01

Presented are the results of investigation of leaching process for rare earth and calcium oxides by sulfuric acid. The method of planning experiment has been used for this investigation. Mixtures of cerium, yttrium and neodyum oxides, taken in the relation of 1:1:0.5, have been used as rare earth elements. Received are adequate models characterizing dependence of solubility of rare earth and calcium oxides on some factors (H 2 SO 4 concentration, CaO:R 2 O 3 relation, liquid to solid ratio, solution temperature, mixing time). Dependences of solubility of rare earth elements and calcium on the process parameters are received and presented in a form of regression equations. Dependences received can be used for choice of optimum regime of the process as well as for its control

Solution combustion synthesis of metal oxide nanomaterials for energy storage and conversion

Science.gov (United States)

Li, Fa-Tang; Ran, Jingrun; Jaroniec, Mietek; Qiao, Shi Zhang

2015-10-01

The design and synthesis of metal oxide nanomaterials is one of the key steps for achieving highly efficient energy conversion and storage on an industrial scale. Solution combustion synthesis (SCS) is a time- and energy-saving method as compared with other routes, especially for the preparation of complex oxides which can be easily adapted for scale-up applications. This review summarizes the synthesis of various metal oxide nanomaterials and their applications for energy conversion and storage, including lithium-ion batteries, supercapacitors, hydrogen and methane production, fuel cells and solar cells. In particular, some novel concepts such as reverse support combustion, self-combustion of ionic liquids, and creation of oxygen vacancies are presented. SCS has some unique advantages such as its capability for in situ doping of oxides and construction of heterojunctions. The well-developed porosity and large specific surface area caused by gas evolution during the combustion process endow the resulting materials with exceptional properties. The relationship between the structural properties of the metal oxides studied and their performance is discussed. Finally, the conclusions and perspectives are briefly presented.

Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

Science.gov (United States)

2017-05-08

annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

Adenine-N-oxide produced from adenine with gamma-rays and its binding to SH protein

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, O [Hiroshima Univ. (Japan). Research Inst. for Nuclear Medicine and Biology

1980-12-01

/sup 14/C-labeled adenine aqueous solution was irradiated with /sup 60/Co gamma-rays. The yield of adenine-7-N-oxide, a radiolytic product, was determined by Sephadex G-10 column chromatography and TLC autoradiography. The apparent productive yield was very low, but the true yield should be much higher because of the reversible reaction to adenine and the easy decomposition of the N-oxide itself. Using synthesized /sup 14/C-adenine-7-N-oxide, noncovalent binding of this N-oxide to urease, an SH protein, was confirmed in comparison between the presence and absence of SDS by Ultrogel AcA 22 column chromatography. The noncovalent binding of the gamma-irradiated /sup 35/S-cysteine was also observed. The yield reached a limit in O/sub 2/ easier than in N/sub 2/ as the atmosphere for DNA irradiation. These results support an interaction structure, chemical bonds N-O---H-S-, for noncovalent binding which may be applied to the biological system as a radiation-induced damage.

Process for producing metal oxide kernels and kernels so obtained

International Nuclear Information System (INIS)

Lelievre, Bernard; Feugier, Andre.

1974-01-01

The process desbribed is for producing fissile or fertile metal oxide kernels used in the fabrication of fuels for high temperature nuclear reactors. This process consists in adding to an aqueous solution of at least one metallic salt, particularly actinide nitrates, at least one chemical compound capable of releasing ammonia, in dispersing drop by drop the solution thus obtained into a hot organic phase to gel the drops and transform them into solid particles. These particles are then washed, dried and treated to turn them into oxide kernels. The organic phase used for the gel reaction is formed of a mixture composed of two organic liquids, one acting as solvent and the other being a product capable of extracting the anions from the metallic salt of the drop at the time of gelling. Preferably an amine is used as product capable of extracting the anions. Additionally, an alcohol that causes a part dehydration of the drops can be employed as solvent, thus helping to increase the resistance of the particles [fr

Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

NARCIS (Netherlands)

Sokolovskij, R.; Sun, J.; Santagata, F.; Iervolino, E.; Li, S.; Zhang, G.Y.; Sarro, P.M.; Zhang, G.Q.

2016-01-01

A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O₂ plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported

TRU decontamination of high-level Purex waste by solvent extraction using a mixed octyl(phenyl)-N,N-diisobutyl-carbamoylmethylphosphine oxide/TBP/NPH (TRUEX) solvent

International Nuclear Information System (INIS)

Horwitz, E.P.; Kalina, D.G.; Diamond, H.; Kaplan, L.; Vandegrift, G.F.; Leonard, R.A.; Steindler, M.J.; Schulz, W.W.

1984-01-01

The TRUEX (transuranium extraction) process was tested on a simulated high-level dissolved sludge waste (DSW). A batch counter-current extraction mode was used for seven extraction and three scrub stages. One additional extraction stage and two scrub stages and all strip stages were performed by batch extraction. The TRUEX solvent consisted of 0.20 M octyl(phenyl)-N,N-diisobutylcarbamoyl-methylphosphine oxide-1.4 M TBP in Conoco (C 12 -C 14 ). The feed solution was 1.0 M in HNO 3 , 0.3 M in H 2 C 2 O 4 and contained mixed (stable) fission products, U, Np, Pu, and Am, and a number of inert constituents, e.g., Fe and Al. The test showed that the process is capable of reducing the TRU concentration in the DSW by a factor of 4 x 10 4 (to <100 nCi/g of disposed form) and reducing the quantity of TRU waste by two orders of magnitude

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces.

Science.gov (United States)

Litzov, Ivan; Brabec, Christoph J

2013-12-10

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n -type- and p -type-like MeO x interface materials consisting of binary compounds A x B y . Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ Solar Cells Using Different Metal Oxide Interfaces

Directory of Open Access Journals (Sweden)

Ivan Litzov

2013-12-01

Full Text Available Solution-processed inverted bulk heterojunction (BHJ solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL and as hole transport/extraction layers (HTL/HEL in inverted BHJ solar cells will be reviewed and discussed.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

Science.gov (United States)

Litzov, Ivan; Brabec, Christoph J.

2013-01-01

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed. PMID:28788423

Nitrous oxide emission related to ammonia-oxidizing bacteria and mitigation options from N fertilization in a tropical soil

NARCIS (Netherlands)

Soares, Johnny R.; Cassman, N.; Kielak, A.M.; Pijl, A.S.; do Carmo, J.B.; Lourenço, Késia S.; Laanbroek, H.J.; Cantarella, H.; Kuramae, E.E.

2016-01-01

Nitrous oxide (N2O) from nitrogen fertilizers applied to sugarcane has high environmental impact on ethanol production. This study aimed to determine the main microbial processes responsible for the N2O emissions from soil fertilized with different N sources, to identify options to mitigate N2O

Electric transport in N-type Fe2O3

NARCIS (Netherlands)

Acket, G.A.; Volger, J.

Resistivity, Seebeck-coefficient, Hall-coefficient and magneto-resistance of n-type single crystal ferric oxide (hematite), containing Sn4+ as an impurity, are reported. The resistivity does not show important anisotropy. The Hall- and magneto-resistance effects are probably related to the parasitic

Synthesis of Copper-Based Transparent Conductive Oxides with Delafossite Structure via Sol-Gel Processing

OpenAIRE

Götzendörfer, Stefan

2011-01-01

Starting off with solubility experiments of possible precursors, the present study reveals the whole development of a sol gel processing route for transparent p type semiconductive thin films with delafossite structure right to the fabrication of functional p-n junctions. The versatile sol formulation could successfully be modified for several oxide compositions, enabling the synthesis of CuAlO2, CuCrO2, CuMnO2, CuFeO2 and more. Although several differences in the sintering behaviour of powde...

Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement.

Science.gov (United States)

Espinosa, Nieves; Dam, Henrik Friis; Tanenbaum, David M; Andreasen, Jens W; Jørgensen, Mikkel; Krebs, Frederik C

2011-01-11

The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V₂O₅·(H₂O) n /Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration of the VTIP precursor over two orders of magnitude. Hydrated vanadium(V)oxide layers were characterized by profilometry, scanning electron microscopy, energy dispersive X-ray spectroscopy, and grazing incidence wide angle X-ray scattering. The power conversion efficiency (PCE) for completed modules was up to 0.18%, in contrast to single cells where efficiencies of 0.4% were achieved. Stability tests under indoor and outdoor conditions were accomplished over three weeks on a solar tracker.

Influence of the reuse of the electrolytic solution on the properties of hydroxyapatite coatings produced by plasma electrolytic oxidation of grade 4 titanium

Energy Technology Data Exchange (ETDEWEB)

Antonio, Cesar A.; Rangel, Elidiane Cipriano; Cruz, Nilson Cristino, E-mail: cesar.augustoa@hotmail.com [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil)

2016-07-01

Full text: Plasma electrolytic oxidation (PEO) is a process able to produce oxide coatings on light metals, such as Al, Ti, V, Mg, Ta and Nb. In this technique, the application of a voltage, in the range of hundreds of volts, between the sample and a cathode immersed in an electrolyte solution produces electrical fields intense enough to breakdown the insulating oxide layer on the sample surface giving rise to micro electric sparks[1]. These micro-arcs can locally melt the substrate alloying it with elements in the electrolyte solution [2]. In this work PEO has been used to produce coatings with high concentration of hydroxyapatite on Grade 4 titanium disks. The treatments were performed in a 1 liter stainless steel tank. The tank wall was used as the cathode and the coatings were produced during 120 s using calcium acetate and sodium glycerophosphate water solutions as electrolyte. The samples were biased with 480 V pulses with frequency and duty cycle of 100 Hz and 60%, respectively. Using profilometry, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction it has been evaluated the influence of the number of reuses of the solution on the coating properties. The coating produced contains around 85% of HA and it has not been observed any significant changes in their properties when the same solution was reused up to 5 times. [1] A.L. Yerokhin, X. Nie, A. Leyland, A. Matthews, Surf. Coat. Technol. 130 (2000) 195 206. [2] C. A. Antonio, N. C. Cruz, et al. Materials Research. 17(6) 2014; 1427-1433. (author)