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Sample records for solution-processed high-performance n-channel

  1. n-Channel semiconductor materials design for organic complementary circuits.

    Science.gov (United States)

    Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

    2011-07-19

    emphasis on structure-property relationships. We then examine the synthesis and properties of carbonyl-functionalized oligomers, which constitute second-generation n-channel oligothiophenes, in both vacuum- and solution-processed FETs. These materials have high carrier mobilities and good air stability. In parallel, exceptionally electron-deficient cyano-functionalized arylenediimide derivatives are discussed as early examples of thermodynamically air-stable, high-performance n-channel semiconductors; they exhibit record electron mobilities of up to 0.64 cm(2)/V·s. Furthermore, we provide an overview of highly soluble ladder-type macromolecular semiconductors as OFET components, which combine ambient stability with solution processibility. A high electron mobility of 0.16 cm(2)/V·s is obtained under ambient conditions for solution-processed films. Finally, examples of polymeric n-channel semiconductors with electron mobilities as high as 0.85 cm(2)/V·s are discussed; these constitute an important advance toward fully printed polymeric electronic circuitry. Density functional theory (DFT) computations reveal important trends in molecular physicochemical and semiconducting properties, which, when combined with experimental data, shed new light on molecular charge transport characteristics. Our data provide the basis for a fundamental understanding of charge transport in high-performance n-channel organic semiconductors. Moreover, our results provide a road map for developing functional, complementary organic circuitry, which requires combining p- and n-channel transistors.

  2. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

    2015-08-31

    This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

  3. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  4. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  5. Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

    Science.gov (United States)

    Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

    2016-01-01

    Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

  6. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  7. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  8. Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

    2016-08-15

    Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

  9. Solution-Processed Graphene/MnO 2 Nanostructured Textiles for High-Performance Electrochemical Capacitors

    KAUST Repository

    Yu, Guihua

    2011-07-13

    Large scale energy storage system with low cost, high power, and long cycle life is crucial for addressing the energy problem when connected with renewable energy production. To realize grid-scale applications of the energy storage devices, there remain several key issues including the development of low-cost, high-performance materials that are environmentally friendly and compatible with low-temperature and large-scale processing. In this report, we demonstrate that solution-exfoliated graphene nanosheets (∼5 nm thickness) can be conformably coated from solution on three-dimensional, porous textiles support structures for high loading of active electrode materials and to facilitate the access of electrolytes to those materials. With further controlled electrodeposition of pseudocapacitive MnO2 nanomaterials, the hybrid graphene/MnO2-based textile yields high-capacitance performance with specific capacitance up to 315 F/g achieved. Moreover, we have successfully fabricated asymmetric electrochemical capacitors with graphene/MnO 2-textile as the positive electrode and single-walled carbon nanotubes (SWNTs)-textile as the negative electrode in an aqueous Na 2SO4 electrolyte solution. These devices exhibit promising characteristics with a maximum power density of 110 kW/kg, an energy density of 12.5 Wh/kg, and excellent cycling performance of ∼95% capacitance retention over 5000 cycles. Such low-cost, high-performance energy textiles based on solution-processed graphene/MnO2 hierarchical nanostructures offer great promise in large-scale energy storage device applications. © 2011 American Chemical Society.

  10. AlGaN/GaN double-channel HEMT

    International Nuclear Information System (INIS)

    Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

    2010-01-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

  11. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

    KAUST Repository

    Isakov, Ivan

    2016-12-29

    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

  12. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

    KAUST Repository

    Isakov, Ivan; Paterson, Alexandra F.; Solomeshch, Olga; Tessler, Nir; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.

    2016-01-01

    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

  13. Solution-processed high-LUMO-level polymers in n-type organic field-effect transistors: a comparative study as a semiconducting layer, dielectric layer, or charge injection layer

    International Nuclear Information System (INIS)

    Liu, Chuan; Xu, Yong; Liu, Xuying; Minari, Takeo; Sirringhaus, Henning; Noh, Yong-Young

    2015-01-01

    In solution-processed organic field-effect transistors (OFETs), the polymers with high level of lowest unoccupied molecular orbitals (LUMOs, > −3.5 eV) are especially susceptible to electron-trapping that causes low electron mobility and strong instability in successive operation. However, the role of high-LUMO-level polymers could be different depending on their locations relative to the semiconductor/insulator interface, or could even possibly benefit the device in some cases. We constructed unconventional polymer heterojunction n-type OFETs to control the location of the same polymer with a high LUMO level, to be in, under, or above the accumulation channel. We found that although the devices with the polymer in the channel suffer from dramatic instability, the same polymer causes much less instability when it acts as a dielectric modification layer or charge injection layer. Especially, it may even improve the device performance in the latter case. This result helps to improve our understanding of the electron-trapping and explore the value of these polymers in OFETs. (invited article)

  14. Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

    Institute of Scientific and Technical Information of China (English)

    Shujing Guo; Liqiang Li; Zhongwu Wang; Zeyang Xu; Shuguang Wang; Kunjie Wu; Shufeng Chen; Zongbo Zhang; Caihong Xu; Wenfeng Qiu

    2017-01-01

    Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability,excellent electrical properties,mature preparation process,and good compatibility with organic semiconductors.However,most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum.In this paper,we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route,which possesses a low leakage current,high capacitance,and low surface roughness.The silica thin film can be produced in the condition of low temperature and atmospheric environment.To meet various demands,the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution.The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance.This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving,time-saving and easy to operate.

  15. High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

    Science.gov (United States)

    Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2018-06-12

    Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

  16. Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

    Science.gov (United States)

    Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2018-04-24

    Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

  17. Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

    Science.gov (United States)

    Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

    2014-02-12

    Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

  18. Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors.

    Science.gov (United States)

    Chaudhry, Mujeeb Ullah; Tetzner, Kornelius; Lin, Yen-Hung; Nam, Sungho; Pearson, Christopher; Groves, Chris; Petty, Michael C; Anthopoulos, Thomas D; Bradley, Donal D C

    2018-05-21

    We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In 2 O 3 /ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm 2 /(V s)) with appreciable current on/off ratios (≈10 3 ) and an external quantum efficiency of 2 × 10 -2 % at 700 cd/m 2 . The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

  19. High performance photovoltaic applications using solution-processed small molecules.

    Science.gov (United States)

    Chen, Yongsheng; Wan, Xiangjian; Long, Guankui

    2013-11-19

    Energy remains a critical issue for the survival and prosperity of humancivilization. Many experts believe that the eventual solution for sustainable energy is the use of direct solar energy as the main energy source. Among the options for renewable energy, photovoltaic technologies that harness solar energy offer a way to harness an unlimited resource and minimum environment impact in contrast with other alternatives such as water, nuclear, and wind energy. Currently, almost all commercial photovoltaic technologies use Si-based technology, which has a number of disadvantages including high cost, lack of flexibility, and the serious environmental impact of the Si industry. Other technologies, such as organic photovoltaic (OPV) cells, can overcome some of these issues. Today, polymer-based OPV (P-OPV) devices have achieved power conversion efficiencies (PCEs) that exceed 9%. Compared with P-OPV, small molecules based OPV (SM-OPV) offers further advantages, including a defined structure for more reproducible performance, higher mobility and open circuit voltage, and easier synthetic control that leads to more diversified structures. Therefore, while largely undeveloped, SM-OPV is an important emerging technology with performance comparable to P-OPV. In this Account, we summarize our recent results on solution-processed SM-OPV. We believe that solution processing is essential for taking full advantage of OPV technologies. Our work started with the synthesis of oligothiophene derivatives with an acceptor-donor-acceptor (A-D-A) structure. Both the backbone conjugation length and electron withdrawing terminal groups play an important role in the light absorption, energy levels and performance of the devices. Among those molecules, devices using a 7-thiophene-unit backbone and a 3-ethylrhodanine (RD) terminal unit produced a 6.1% PCE. With the optimized conjugation length and terminal unit, we borrowed from the results with P-OPV devices to optimize the backbone. Thus we

  20. High mobility solution-processed hybrid light emitting transistors

    International Nuclear Information System (INIS)

    Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

    2014-01-01

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

  1. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Science.gov (United States)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-08-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

  2. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-01-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f_t/f_m_a_x of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f_t/f_m_a_x of 48/60 GHz.

  3. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J. [Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)

    2016-08-08

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.

  4. Critical role of alkyl chain branching of organic semiconductors in enabling solution-processed N-channel organic thin-film transistors with mobility of up to 3.50 cm² V(-1) s(-1).

    Science.gov (United States)

    Zhang, Fengjiao; Hu, Yunbin; Schuettfort, Torben; Di, Chong-an; Gao, Xike; McNeill, Christopher R; Thomsen, Lars; Mannsfeld, Stefan C B; Yuan, Wei; Sirringhaus, Henning; Zhu, Daoben

    2013-02-13

    Substituted side chains are fundamental units in solution processable organic semiconductors in order to achieve a balance of close intermolecular stacking, high crystallinity, and good compatibility with different wet techniques. Based on four air-stable solution-processed naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) that bear branched alkyl chains with varied side-chain length and different branching position, we have carried out systematic studies on the relationship between film microstructure and charge transport in their organic thin-film transistors (OTFTs). In particular synchrotron measurements (grazing incidence X-ray diffraction and near-edge X-ray absorption fine structure) are combined with device optimization studies to probe the interplay between molecular structure, molecular packing, and OTFT mobility. It is found that the side-chain length has a moderate influence on thin-film microstructure but leads to only limited changes in OTFT performance. In contrast, the position of branching point results in subtle, yet critical changes in molecular packing and leads to dramatic differences in electron mobility ranging from ~0.001 to >3.0 cm(2) V(-1) s(-1). Incorporating a NDI-DTYM2 core with three-branched N-alkyl substituents of C(11,6) results in a dense in-plane molecular packing with an unit cell area of 127 Å(2), larger domain sizes of up to 1000 × 3000 nm(2), and an electron mobility of up to 3.50 cm(2) V(-1) s(-1), which is an unprecedented value for ambient stable n-channel solution-processed OTFTs reported to date. These results demonstrate that variation of the alkyl chain branching point is a powerful strategy for tuning of molecular packing to enable high charge transport mobilities.

  5. All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors

    International Nuclear Information System (INIS)

    Park, Sung Kyu; Kim, Yong-Hoon; Han, Jeong-In

    2009-01-01

    We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 μm typically showed a mobility range 0.05-0.2 cm 2 V -1 s -1 with an on/off ratio of more than 10 6 .

  6. Charge exchange processes of high energy heavy ions channeled in crystals

    International Nuclear Information System (INIS)

    Andriamonje, S.; Dural, J.; Toulemonde, M.; Groeneveld, K.O.; Maier, R.; Quere, Y.

    1990-01-01

    The interaction of moving ions with single crystals is very sensitive to the orientation of the incident beam with respect to the crystalline directions of the target. The experiments show that high energy heavy ion channeling deeply modifies the slowing down and charge exchange processes. In this review, we describe the opportunity offered by channeling conditions to study the charge exchange processes. Some aspects of the charge exchange processes with high energy channeled heavy ions are selected from the extensive literature published over the past few years on this subject. Special attention is given to the work performed at the GANIL facility on the study of Radiative Electron Capture (REG), Electron Impact Ionisation (EII), and convoy electron emission. Finally we emphasize the interest of studying resonant charge exchange processes such as Resonant Coherent Excitation (RCE), Resonant Transfer and Excitation (RTE) or Dielectronic Recombination (DR) and the recently proposed Nuclear Excitation by Electron Capture (NEEC)

  7. Patterning solution-processed organic single-crystal transistors with high device performance

    Directory of Open Access Journals (Sweden)

    Yun Li

    2011-06-01

    Full Text Available We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (μFET of up to 3.5 cm2/V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of μFET of organic crystal transistors was caused by contact resistance. Further improvement of the device with higher μFET with smaller variation can be expected when lower and more uniform contact resistance is achieved.

  8. Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

    Science.gov (United States)

    Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

    2011-08-01

    Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

  9. Harnessing mode-selective nonlinear optics for on-chip multi-channel all-optical signal processing

    Directory of Open Access Journals (Sweden)

    Ming Ma

    2016-11-01

    Full Text Available All-optical signal processing based on nonlinear optical effects allows for the realization of important functions in telecommunications including wavelength conversion, optical multiplexing/demultiplexing, Fourier transformation, and regeneration, amongst others, on ultrafast time scales to support high data rate transmission. In integrated photonic subsystems, the majority of all-optical signal processing systems demonstrated to date typically process only a single channel at a time or perform a single processing function, which imposes a serious limitation on the functionality of integrated solutions. Here, we demonstrate how nonlinear optical effects can be harnessed in a mode-selective manner to perform simultaneous multi-channel (two and multi-functional optical signal processing (i.e., regenerative wavelength conversion in an integrated silicon photonic device. This approach, which can be scaled to a higher number of channels, opens up a new degree of freedom for performing a broad range of multi-channel nonlinear optical signal processing functions using a single integrated photonic device.

  10. High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials.

    Science.gov (United States)

    Song, Inho; Lee, Seung-Chul; Shang, Xiaobo; Ahn, Jaeyong; Jung, Hoon-Joo; Jeong, Chan-Uk; Kim, Sang-Wook; Yoon, Woojin; Yun, Hoseop; Kwon, O-Pil; Oh, Joon Hak

    2018-04-11

    This study investigates the performance of single-crystalline nanomaterials of wide-band gap naphthalene diimide (NDI) derivatives with methylene-bridged aromatic side chains. Such materials are found to be easily used as high-performance, visible-blind near-UV light detectors. NDI single-crystalline nanoribbons are assembled using a simple solution-based process (without solvent-inclusion problems), which is then applied to organic phototransistors (OPTs). Such OPTs exhibit excellent n-channel transistor characteristics, including an average electron mobility of 1.7 cm 2 V -1 s -1 , sensitive UV detection properties with a detection limit of ∼1 μW cm -2 , millisecond-level responses, and detectivity as high as 10 15 Jones, demonstrating the highly sensitive organic visible-blind UV detectors. The high performance of our OPTs originates from the large face-to-face π-π stacking area between the NDI semiconducting cores, which is facilitated by methylene-bridged aromatic side chains. Interestingly, NDI-based nanoribbon OPTs exhibit a distinct visible-blind near-UV detection with an identical detection limit, even under intense visible light illumination (for example, 10 4 times higher intensity than UV light intensity). Our findings demonstrate that wide-band gap NDI-based nanomaterials are highly promising for developing high-performance visible-blind UV photodetectors. Such photodetectors could potentially be used for various applications including environmental and health-monitoring systems.

  11. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  12. High frequency longitudinal profiling reveals hydrologic controls on solute sourcing, transport and processing in a karst river

    Science.gov (United States)

    Hensley, R. T.; Cohen, M. J.; Spangler, M.; Gooseff, M. N.

    2017-12-01

    The lower Santa Fe River is a large, karst river of north Florida, fed by numerous artesian springs and also containing multiple sink-rise systems. We performed repeated longitudinal profiles collecting very high frequency measurements of multiple stream parameters including temperature, dissolved oxygen, carbon dioxide, pH, dissolved organic matter, nitrate, ammonium, phosphate and turbidity. This high frequency dataset provided a spatially explicit understanding of solute sources and coupled biogeochemical processing rates along the 25 km study reach. We noted marked changes in river profiles as the river transitioned from low to high flow during the onset of the wet season. The role of lateral inflow from springs as the primary solute source was greatly reduced under high flow conditions. Effects of sink-rise systems, which under low flow conditions allow the majority of flow to bypass several kilometer long sections of the main channel, virtually disappeared under high flow conditions. Impeded light transmittance at high flow reduced primary production and by extension assimilatory nutrient uptake. This study demonstrates how high frequency longitudinal profiling can be used to observe how hydrologic conditions can alter groundwater-surface water interactions and modulate the sourcing, transport and biogeochemical processing of stream solutes.

  13. Accessible high performance computing solutions for near real-time image processing for time critical applications

    Science.gov (United States)

    Bielski, Conrad; Lemoine, Guido; Syryczynski, Jacek

    2009-09-01

    High Performance Computing (HPC) hardware solutions such as grid computing and General Processing on a Graphics Processing Unit (GPGPU) are now accessible to users with general computing needs. Grid computing infrastructures in the form of computing clusters or blades are becoming common place and GPGPU solutions that leverage the processing power of the video card are quickly being integrated into personal workstations. Our interest in these HPC technologies stems from the need to produce near real-time maps from a combination of pre- and post-event satellite imagery in support of post-disaster management. Faster processing provides a twofold gain in this situation: 1. critical information can be provided faster and 2. more elaborate automated processing can be performed prior to providing the critical information. In our particular case, we test the use of the PANTEX index which is based on analysis of image textural measures extracted using anisotropic, rotation-invariant GLCM statistics. The use of this index, applied in a moving window, has been shown to successfully identify built-up areas in remotely sensed imagery. Built-up index image masks are important input to the structuring of damage assessment interpretation because they help optimise the workload. The performance of computing the PANTEX workflow is compared on two different HPC hardware architectures: (1) a blade server with 4 blades, each having dual quad-core CPUs and (2) a CUDA enabled GPU workstation. The reference platform is a dual CPU-quad core workstation and the PANTEX workflow total computing time is measured. Furthermore, as part of a qualitative evaluation, the differences in setting up and configuring various hardware solutions and the related software coding effort is presented.

  14. Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors.

    Science.gov (United States)

    Ebata, Hideaki; Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Yui, Tatsuto

    2007-12-26

    2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).

  15. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

    Science.gov (United States)

    Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

    2018-02-01

    A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

  16. High-quality GaN epitaxially grown on Si substrate with serpentine channels

    Science.gov (United States)

    Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

    2018-06-01

    A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

  17. A high-efficiency, low-noise power solution for a dual-channel GNSS RF receiver

    International Nuclear Information System (INIS)

    Shi Jian; Mo Taishan; Gan Yebing; Ma Chengyan; Ye Tianchun; Le Jianlian

    2012-01-01

    A high-efficiency low-noise power solution for a dual-channel GNSS RF receiver is presented. The power solution involves a DC—DC buck converter and a followed low-dropout regulator (LDO). The pulse-width-modulation (PWM) control method is adopted for better noise performance. An improved low-power high-frequency PWM control circuit is proposed, which halves the average quiescent current of the buck converter to 80 μA by periodically shutting down the OTA. The size of the output stage has also been optimized to achieve high efficiency under a light load condition. In addition, a novel soft-start circuit based on a current limiter has been implemented to avoid inrush current. Fabricated with commercial 180-nm CMOS technology, the DC—DC converter achieves a peak efficiency of 93.1% under a 2 MHz working frequency. The whole receiver consumes only 20.2 mA from a 3.3 V power supply and has a noise figure of 2.5 dB. (semiconductor integrated circuits)

  18. Multi-channel and porous SiO@N-doped C rods as anodes for high-performance lithium-ion batteries

    Science.gov (United States)

    Huang, Xiao; Li, Mingqi

    2018-05-01

    To improve the cycling stability and rate capability of SiO electrodes, multi-channel and porous SiO@N-doped C (mp-SiO@N-doped C) rods are fabricated by the combination of electrospinning and heat treatment with the assistance of poly(methyl methacrylate) (PMMA). During annealing, in-situ PMMA degradation and gasification lead to the formation of multi-channel structure and more pores. As anodes for lithium ion batteries, the mp-SiO@N-doped C rods exhibit excellent cycling stability. At a current density of 400 mA g-1, a discharge capacity of 806 mAh g-1 can be kept after 250 cycles, the retention of which is over than 100% versus the initial reversible capacity. Compared with the SiO@N-doped C rods synthesized without the help of PMMA, the mp-SiO@N-doped C rods exhibit more excellent rate capability. The excellent electrochemical performance is attributed to the special structure of the mp-SiO@N-doped C rods. In addition to the conductivity improved by carbon fibers, the multi-channel and porous structures not only make ions/electrons transfer and electrolyte diffusion easier, but also contribute to the structural stability of the electrodes.

  19. High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode

    Science.gov (United States)

    Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

    2016-12-01

    Solution processed photoactive PbS quantum dots (QDs) were used as channel in high-performance near-infrared vertical field-effect phototransistor (VFEpT) where monolayer graphene embedded as transparent electrode. In this vertical architecture, the PbS QD channel was sandwiched and naturally protected between the drain and source electrodes, which made the device ultrashort channel length (110 nm) simply the thickness of the channel layer. The VFEpT exhibited ambipolar operation with high mobilities of μe = 3.5 cm2/V s in n-channel operation and μh = 3.3 cm2/V s in p-channel operation at low operation voltages. By using the photoactive PbS QDs as channel material, the VFEpT exhibited good photoresponse properties with a responsivity of 4.2 × 102 A/W, an external quantum efficiency of 6.4 × 104% and a photodetectivity of 2.1 × 109 Jones at the light irradiance of 36 mW/cm2. Additionally, the VFEpT showed excellent on/off switching with good stability and reproducibility and fast response speed with a short rise time of 12 ms in n-channel operation and 10.6 ms in p-channel operation. These high mobilities, good photoresponse properties and simplistic fabrication of our VFEpTs provided a facile route to the high-performance inorganic photodetectors.

  20. Export channel pricing management for integrated solutions

    OpenAIRE

    Roine, Henna; Sainio, Liisa-Maija; Saarenketo, Sami

    2012-01-01

    This article studies systems integrators' export channel pricing management for integrated solutions. We find support from our empirical case study for the notion that a systems integrator's export channel pricing strategy is multidimensional and dependent on international pricing environment and partner characteristics and that export partnerships have unique implications on a systems integrator's pricing process. The results show that giving up pricing control in export channel context may ...

  1. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

    International Nuclear Information System (INIS)

    Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

    2015-01-01

    In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

  2. A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

    Science.gov (United States)

    Shan, Chan; Wang, Ying; Luo, Xin; Bao, Meng-tian; Yu, Cheng-hao; Cao, Fei

    2017-12-01

    In this paper, the performance of graded channel double-gate MOSFET (GC-DGFET) that utilizes the charge-plasma concept and a high-κ spacer is investigated through 2-D device simulations. The results demonstrate that GC-DGFET with high-κ spacer can effectively improve the ON-state driving current (ION) and reduce the OFF-leakage current (IOFF). We find that reduction of the initial energy barrier between the source and channel is the origin of this ION enhancement. The reason for the IOFF reduction is identified to be the extension of the effective channel length owing to the fringing field via high-κ spacers. Consequently, these devices offer enhanced performance by reducing the total gate-to-gate capacitance (Cgg) and decreasing the intrinsic delay (τ).

  3. Micro channels in macro thermal management solutions

    Directory of Open Access Journals (Sweden)

    Kosoy Boris V.

    2006-01-01

    Full Text Available Modern progress in electronics is associated with increase in computing ability and processing speed, as well as decrease in size. Future applications of electronic devices in aviation, aero space and high performance consumer products’ industry demand on very stringent specifications concerning miniaturization, component density, power density and reliability. Excess heat produces stresses on internal components inside the electronic device, thus creating reliability problems. Thus, a problem of heat generation and its efficient removal arises and it has led to the development of advanced thermal control systems. Present research analyses a thermodynamic feasibility of micro capillary heat pumped net works in thermal management of electronic systems, considers basic technological constrains and de sign availability, and identifies perspective directions for the further studies. Computer Fluid Dynamics studies have been per formed on the laminar convective heat transfer and pressure drop of working fluid in silicon micro channels. Surface roughness is simulated via regular constructal, and stochastic models. Three-dimensional numerical solution shows significant effects of surface roughness in terms of the rough element geometry such as height, size, spacing and the channel height on the velocity and pressure fields.

  4. High performance supercapacitor using N-doped graphene prepared via supercritical fluid processing with an oxime nitrogen source

    International Nuclear Information System (INIS)

    Balaji, S. Suresh; Elavarasan, A.; Sathish, M.

    2016-01-01

    Graphical abstract: N-doped graphene prepared via supercritical fluid processing with oxime nitrogen source (DMG) showed enhanced performance in electrochemical supercapacitor application. A maximum specific capacitance of 286 F g"−"1 at a current density of 0.5 A/g was achieved with a high specific capacity retention of 98% after 1000 cycles at 5 A/g. - Highlights: • N-functionalised graphene synthesized via supercritical fluid processing. • DMG, an oxime based nitrogen precursor. • Maximum specific capacitance of 286 F/g at 0.5 A/g in aqueous solution. • Pyridinic as well as quarternary nitrogen for enhanced capacitance. - Abstract: Heteroatom doped graphene has been proved for its promising applications in electrochemical energy storage systems. Here, nitrogen (N) doped graphene was prepared via two different techniques namely supercritical fluid assisted processing and hydrothermal heat treatment using dimethylglyoxime (DMG) as an oxime nitrogen precursor. The FT-IR and Raman spectra showed the N-containing functional group in the graphene. The XRD analysis revealed the complete reduction of graphene oxide during the supercritical fluid processing. The elemental analysis and X-ray photoelectron spectroscopy revealed the amount and nature of N-doping in the graphene, respectively. The surface morphology and physical nature of the samples were analyzed using scanning and transmission electron microscopic analysis. The electrochemical performance of prepared electrode materials was evaluated using cyclic voltammetry, galvanostatic charge-discharge analysis and electrochemical impedance spectroscopy. The N-doped graphene prepared via supercritical fluid assisted processing exhibit enhanced capacitive behaviour with a maximum specific capacitance of 286 F g"−"1 at a current density of 0.5 A/g. The cycling studies showed 98% specific capacity retention with 100% coulombic efficiency over 1000 cycles at 5 A/g. The enhanced specific capacitance of N

  5. Optimal processing of reversible quantum channels

    Energy Technology Data Exchange (ETDEWEB)

    Bisio, Alessandro, E-mail: alessandro.bisio@unipv.it [QUIT Group, Dipartimento di Fisica, INFN Sezione di Pavia, via Bassi 6, 27100 Pavia (Italy); D' Ariano, Giacomo Mauro; Perinotti, Paolo [QUIT Group, Dipartimento di Fisica, INFN Sezione di Pavia, via Bassi 6, 27100 Pavia (Italy); Sedlák, Michal [Department of Optics, Palacký University, 17. Listopadu 1192/12, CZ-771 46 Olomouc (Czech Republic); Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava (Slovakia)

    2014-05-01

    We consider the general problem of the optimal transformation of N uses of (possibly different) unitary channels to a single use of another unitary channel in any finite dimension. We show how the optimal transformation can be fully parallelized, consisting in a preprocessing channel followed by a parallel action of all the N unitaries and a final postprocessing channel. Our techniques allow to achieve an exponential reduction in the number of the free parameters of the optimization problem making it amenable to an efficient numerical treatment. Finally, we apply our general results to find the analytical solution for special cases of interest like the cloning of qubit phase gates.

  6. Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

    KAUST Repository

    Douglas, Jessica D.; Chen, Mark S.; Niskala, Jeremy R.; Lee, Olivia P.; Yiu, Alan T.; Young, Eric P.; Frechet, Jean

    2014-01-01

    Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices

  7. Wavy channel transistor for area efficient high performance operation

    KAUST Repository

    Fahad, Hossain M.

    2013-04-05

    We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.

  8. Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

    Science.gov (United States)

    Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

    2017-06-01

    Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.

    Science.gov (United States)

    Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P H; Bedzyk, Michael J; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio

    2015-03-17

    Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

  10. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-09

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

  11. Effect of graded InGaN drain region and 'In' fraction in InGaN channel on performances of InGaN tunnel field-effect transistor

    Science.gov (United States)

    Duan, Xiaoling; Zhang, Jincheng; Wang, Shulong; Quan, Rudai; Hao, Yue

    2017-12-01

    An InGaN-based graded drain region tunnel field-effect transistor (GD-TFET) is proposed to suppress the ambipolar behavior. The simulation results with the trade-off between on-state current (Ion) and ambipolar current (Iambipolar) show decreased Iambipolar (1.9 × 10-14 A/μm) in comparison with that of conventional TFETs (2.0 × 10-8 A/μm). Furthermore, GD-TFET with high 'In' fraction InxGa1-xN source-side channel (SC- GD-TFET) is explored and exhibits 5.3 times Ion improvement and 60% average subthreshold swing (SSavg) reduction in comparison with GD-TFET by adjusting 'In' fraction in the InxGa1-xN source-side channel. The improvement is attributed to the confinement of BTBT in the source-side channel by the heterojunction. And then, the optimum value for source-side channel length (Lsc) is researched by DC performances results, which shows it falls into the range between Lsc = 10 nm and 20 nm.

  12. High performance printed oxide field-effect transistors processed using photonic curing

    Science.gov (United States)

    Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

    2018-06-01

    Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

  13. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    Science.gov (United States)

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S.

    2014-02-01

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ˜50 s-SWCNTs μm-1. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 107 and 46 cm2 V-1 s-1, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm-1 and the on/off ratio is 4 × 105. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

  14. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

    Science.gov (United States)

    Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

    2016-09-12

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

  15. Processes in N-channel MOSFETs during postirradiation thermal annealing

    International Nuclear Information System (INIS)

    Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

    1997-01-01

    The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

  16. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  17. Performance of Pre-processing Schemes with Imperfect Channel State Information

    DEFF Research Database (Denmark)

    Christensen, Søren Skovgaard; Kyritsi, Persa; De Carvalho, Elisabeth

    2006-01-01

    Pre-processing techniques have several benefits when the CSI is perfect. In this work we investigate three linear pre-processing filters, assuming imperfect CSI caused by noise degradation and channel temporal variation. Results indicate, that the LMMSE filter achieves the lowest BER and the high......Pre-processing techniques have several benefits when the CSI is perfect. In this work we investigate three linear pre-processing filters, assuming imperfect CSI caused by noise degradation and channel temporal variation. Results indicate, that the LMMSE filter achieves the lowest BER...... and the highest SINR when the CSI is perfect, whereas the simple matched filter may be a good choice when the CSI is imperfect. Additionally the results give insight into the inherent trade-off between robustness against CSI imperfections and spatial focusing ability....

  18. A strategy for determination of test intervals of k-out-of-n multi-channel systems

    International Nuclear Information System (INIS)

    Cho, S.; Jiang, J.

    2007-01-01

    State space models for determination of the optimal test frequencies for k-out-of-n multi channel systems are developed in this paper. The analytic solutions for the optimal surveillance test frequencies are derived using the Markov process technique. The solutions show that an optimal test frequency which maximizes the target probability can be determined by decomposing the system states to 3 states based on the system configuration and success criteria. Examples of quantification of the state probabilities and the optimal test frequencies of a three-channel system and a four-channel system with different success criteria are presented. The strategy for finding the optimal test frequency developed in this paper can generally be applicable to any k-out-of-n multi-channel standby systems that involve complex testing schemes. (author)

  19. Performance of the HIRS/2 instrument on TIROS-N. [High Resolution Infrared Radiation Sounder

    Science.gov (United States)

    Koenig, E. W.

    1980-01-01

    The High Resolution Infrared Radiation Sounder (HIRS/2) was developed and flown on the TIROS-N satellite as one means of obtaining atmospheric vertical profile information. The HIRS/2 receives visible and infrared spectrum radiation through a single telescope and selects 20 narrow radiation channels by means of a rotating filter wheel. A passive radiant cooler provides an operating temperature of 106.7 K for the HgCdTe and InSb detectors while the visible detector operates at instrument frame temperature. Low noise amplifiers and digital processing provide 13 bit data for spacecraft data multiplexing and transmission. The qualities of system performance that determine sounding capability are the dynamic range of data collection, the noise equivalent radiance of the system, the registration of the air columns sampled in each channel and the ability to upgrade the calibration of the instrument to maintain the performance standard throughout life. The basic features, operating characteristics and performance of the instrument in test are described. Early orbital information from the TIROS-N launched on October 13, 1978 is given and some observations on system quality are made.

  20. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  1. Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

    Science.gov (United States)

    Liau, Leo Chau-Kuang; Lin, Yun-Guo

    2015-01-01

    Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

  2. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    International Nuclear Information System (INIS)

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S.

    2014-01-01

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm −1 . At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10 7 and 46 cm 2  V −1  s −1 , respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm −1 and the on/off ratio is 4 × 10 5 . These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices

  3. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S., E-mail: msarnold@wisc.edu [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706 (United States)

    2014-02-24

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm{sup −1}. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10{sup 7} and 46 cm{sup 2} V{sup −1} s{sup −1}, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm{sup −1} and the on/off ratio is 4 × 10{sup 5}. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

  4. A High Performance Micro Channel Interface for Real-Time Industrial Image Processing

    Science.gov (United States)

    Thomas H. Drayer; Joseph G. Tront; Richard W. Conners

    1995-01-01

    Data collection and transfer devices are critical to the performance of any machine vision system. The interface described in this paper collects image data from a color line scan camera and transfers the data obtained into the system memory of a Micro Channel-based host computer. A maximum data transfer rate of 20 Mbytes/sec can be achieved using the DMA capabilities...

  5. Sequential grouping constraints on across-channel auditory processing

    DEFF Research Database (Denmark)

    Oxenham, Andrew J.; Dau, Torsten

    2005-01-01

    Søren Buus was one of the pioneers in the study of across-channel auditory processing. His influential 1985 paper showed that introducing slow fluctuations to a low-frequency masker could reduce the detection thresholds of a high-frequency signal by as much as 25 dB [S. Buus, J. Acoust. Soc. Am. 78......, 1958–1965 (1985)]. Søren explained this surprising result in terms of the spread of masker excitation and across-channel processing of envelope fluctuations. A later study [S. Buus and C. Pan, J. Acoust. Soc. Am. 96, 1445–1457 (1994)] pioneered the use of the same stimuli in tasks where across......-channel processing could either help or hinder performance. In the present set of studies we also use paradigms in which across-channel processing can lead to either improvement or deterioration in performance. We show that sequential grouping constraints can affect both types of paradigm. In particular...

  6. Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

    Science.gov (United States)

    Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

    2017-11-01

    High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

  7. Solution-processed organic thermoelectric materials exhibiting doping-concentration-dependent polarity.

    Science.gov (United States)

    Hwang, Sunbin; Potscavage, William J; Yang, Yu Seok; Park, In Seob; Matsushima, Toshinori; Adachi, Chihaya

    2016-10-26

    Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materials's redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m -1 K -2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.

  8. A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications

    International Nuclear Information System (INIS)

    Du, Lili; Luo, Xiao; Wen, Zhanwei; Zhang, Jianping; Sun, Lei; Lv, Wenli; Li, Yao; Zhao, Feiyu; Zhong, Junkang; Ren, Qiang; Huang, Fobao; Xia, Hongquan; Peng, Yingquan

    2015-01-01

    For fullerene based n-channel transistors, remarkably improved device characteristics were achieved via charge injection and transport interfacial synergistic modifications using low-cost aluminium source/drain electrodes. Compared with the reference device without any modifications (device A), the as-fabricated transistor (device H) showed a dramatic improvement of saturation mobility from 0.0026 to 0.3078 cm 2 V −1 s −1 with a maximum on–off current ratio of 10 6 and a minimum subthreshold slope of 1.52 V decade −1 . AFM and XRD analysis manifested that the deposited C 60 films on PVA/OTS successive-modified SiO 2 substrate were highly dense polycrystalline and uniform with larger crystalline grain and less grain boundary. A gap state assisted electron injection mechanism was proposed to explicate the enhanced electrical conductivity considering BCP modification for charge injection interface, which has been well corroborated by a diode-based injection experiment and a theoretical calculation of contact resistances. We further demonstrated the application of the concept modification method to enable comparative time-stable operation of fullerene n-channel transistors. Given many key merits, we believed that this general method using multi-interface modifications could be extended to fabricate other n-channel OFETs with superior electrical performance and stability. (paper)

  9. Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

    KAUST Repository

    Douglas, Jessica D.

    2014-05-12

    Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices to display high open-circuit voltages (>0.85 V) and generate significant charge carriers through hole transfer in addition to the electron-transfer pathway, which is common in fullerene-based devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Cyanated diazatetracene diimides with ultrahigh electron affinity for n-channel field effect transistors

    KAUST Repository

    Ye, Qun

    2013-03-15

    Several diazatetracene diimides with high electron affinity (up to 4.66 eV!) were prepared and well characterized. The LUMO energy level of these electron-deficient molecules was found to be closely related to their material stability. Compound 7 with ultrahigh electron affinity suffered from reduction and hydrolysis in the presence of silica gel or water. The stable compounds 3 and 6 showed n-channel FET behavior with an average electron mobility of 0.002 and 0.005 cm2 V-1 s-1, respectively, using a solution processing method. © 2013 American Chemical Society.

  11. MATHEMATICAL MODEL NON-ISOTHERMAL FLOW HIGHLY VISCOUS MEDIA CHANNELS MATRIX EXTRUDER

    Directory of Open Access Journals (Sweden)

    A. S. Sidorenko

    2015-01-01

    Full Text Available We consider a one-dimensional steady flow of highly viscous medium in a cylindrical channel with Dissipation and dependence of the viscosity on the temperature. It is assumed that a relatively small intervals of temperature variation of the dynamic viscosity with a sufficient degree of accuracy can be assumed to be linear. The model was based on the equations of hydrodynamics and the heat transfer fluid. In the task channel wall temperature is assumed constant. An approximate solution of the problem, according to which the distribution of velocity, pressure and temperature is sought in the form of an expansion in powers of the dimensionless transverse coordinates. A special case, when the ratio of the velocity distribution, pressure and temperature is allowed to restrict the number of terms in the expansion as follows: for speed - the first 3 to the pressure - the first two for the temperature - the first 5. The expressions to determine the temperature profile of the medium in the channel and characterization dissipative heating. To simulate the process of heat transfer highly viscous media developed a program for personal electronic computers. The calculation was performed using experimental research data melt flow grain mixture of buckwheat and soybeans for the load speed of 0.08 mm / s. The method of computer simulation carried out checks on the adequacy of the solutions to the real process of heat transfer. Analysis of the results indicates that for small values of the length of the channel influence dissipation function appears mainly at the wall. By increasing the reduced length of this phenomenon applies to all section of the channel. At high temperature profile along the channel length is determined entirely by dissipation. In the case of heat transfer due to frictional heat only, the form of curves of temperature distribution is a consequence of the interaction effects of heating due to viscous shear effects cooling by conduction. The

  12. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

    Science.gov (United States)

    Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

    2015-08-12

    For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

  13. High-Performance n-Channel Organic Transistors Using High-Molecular-Weight Electron-Deficient Copolymers and Amine-Tailed Self-Assembled Monolayers.

    Science.gov (United States)

    Wang, Yang; Hasegawa, Tsukasa; Matsumoto, Hidetoshi; Mori, Takehiko; Michinobu, Tsuyoshi

    2018-03-01

    While high-performance p-type semiconducting polymers are widely reported, their n-type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high-quality n-type polymers with number-average molecular weight up to 10 5 g mol -1 . Furthermore, by sp 2 -nitrogen atoms (sp 2 -N) substitution, three new n-type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp 2 -N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp 2 -N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine-tailed self-assembled monolayer (SAM) is smoothly formed on a Si/SiO 2 substrate by a simple spin-coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n-type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm 2 V -1 s -1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10 7 is demonstrated for the pSNT-based devices, which are among the highest values for unipolar n-type semiconducting polymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Enhanced electrical stability of nitrate ligand-based hexaaqua complexes solution-processed ultrathin a-IGZO transistors

    Science.gov (United States)

    Choi, C.; Baek, Y.; Lee, B. M.; Kim, K. H.; Rim, Y. S.

    2017-12-01

    We report solution-processed, amorphous indium-gallium-zinc-oxide-based (a-IGZO-based) thin-film transistors (TFTs). Our proposed solution-processed a-IGZO films, using a simple spin-coating method, were formed through nitrate ligand-based metal complexes, and they were annealed at low temperature (250 °C) to achieve high-quality oxide films and devices. We investigated solution-processed a-IGZO TFTs with various thicknesses, ranging from 4 to 16 nm. The 4 nm-thick TFT films had smooth morphology and high-density, and they exhibited excellent performance, i.e. a high saturation mobility of 7.73  ±  0.44 cm2 V-1 s-1, a sub-threshold swing of 0.27 V dec-1, an on/off ratio of ~108, and a low threshold voltage of 3.10  ±  0.30 V. However, the performance of the TFTs degraded as the film thickness was increased. We further performed positive and negative bias stress tests to examine their electrical stability, and it was noted that the operating behavior of the devices was highly stable. Despite a small number of free charges, the high performance of the ultrathin a-IGZO TFTs was attributed to the small effect of the thickness of the channel, low bulk resistance, the quality of the a-IGZO/SiO2 interface, and high film density.

  15. Lateral transport of solutes in microfluidic channels using electrochemically generated gradients in redox-active surfactants.

    Science.gov (United States)

    Liu, Xiaoyang; Abbott, Nicholas L

    2011-04-15

    We report principles for a continuous flow process that can separate solutes based on a driving force for selective transport that is generated by a lateral concentration gradient of a redox-active surfactant across a microfluidic channel. Microfluidic channels fabricated with gold electrodes lining each vertical wall were used to electrochemically generate concentration gradients of the redox-active surfactant 11-ferrocenylundecyl-trimethylammonium bromide (FTMA) in a direction perpendicular to the flow. The interactions of three solutes (a hydrophobic dye, 1-phenylazo-2-naphthylamine (yellow AB), an amphiphilic molecule, 2-(4,4-difluoro-5,7-dimethyl-4-bora-3a,4a-diaza-s-indacene-3-pentanoyl)-1-hexadecanoyl-sn-glycero-3-phosphocholine (BODIPY C(5)-HPC), and an organic salt, 1-methylpyridinium-3-sulfonate (MPS)) with the lateral gradients in surfactant/micelle concentration were shown to drive the formation of solute-specific concentration gradients. Two distinct physical mechanisms were identified to lead to the solute concentration gradients: solubilization of solutes by micelles and differential adsorption of the solutes onto the walls of the microchannels in the presence of the surfactant concentration gradient. These two mechanisms were used to demonstrate delipidation of a mixture of BODIPY C(5)-HPC (lipid) and MPS and purification of BODIPY C(5)-HPC from a mixture of BODIPY C(5)-HPC and yellow AB. Overall, the results of this study demonstrate that lateral concentration gradients of redox-active surfactants formed within microfluidic channels can be used to transport solutes across the microfluidic channels in a solute-dependent manner. The approach employs electrical potentials (solutions having high ionic strength (>0.1M), and offers the basis of continuous processes for the purification or separation of solutes in microscale systems. © 2011 American Chemical Society

  16. FPGA based high-performance multi-channel analyzer with local histogram memory

    International Nuclear Information System (INIS)

    Kulkarni, C.P.; Vaidya, P.P.; Paulson, M.

    2004-01-01

    Modern nuclear spectroscopy systems demand for a Multi-Channel Analyzer (MCA) with higher resolution, faster speed and other advanced features. The MCA described here is targeted for such demanding applications. The MCA has an in-built local histogram memory and a memory management unit integrated in an FPGA (Field Programmable Gate Array) chip. In addition to the integrated low power digital circuitry, the system utilizes state of the art advanced analog circuits like low power, high speed and high precision comparators, op-amps, ADC and DAC. The operating resolution is selectable from 256 channels to 16384 channels for pulse height analysis. It supports high count rate applications (typically 100 KHz) without significant dead time penalty. It can have an USB bus interface with simple changes. In general, the MCA gives a high performance, compact and low power alternative for portable and battery operated systems as well as for high end laboratory instruments. (author)

  17. Hierarchically porous carbon with high-speed ion transport channels for high performance supercapacitors

    Science.gov (United States)

    Lu, Haoyuan; Li, Qingwei; Guo, Jianhui; Song, Aixin; Gong, Chunhong; Zhang, Jiwei; Zhang, Jingwei

    2018-01-01

    Hierarchically porous carbons (HPC) are considered as promising electrode materials for supercapacitors, due to their outstanding charge/discharge cycling stabilities and high power densities. However, HPC possess a relatively low ion diffusion rate inside the materials, which challenges their application for high performance supercapacitor. Thus tunnel-shaped carbon pores with a size of tens of nanometers were constructed by inducing the self-assembly of lithocholic acid with ammonium chloride, thereby providing high-speed channels for internal ion diffusion. The as-formed one-dimensional pores are beneficial to the activation process by KOH, providing a large specific surface area, and then facilitate rapid transport of electrolyte ions from macropores to the microporous surfaces. Therefore, the HPC achieve an outstanding gravimetric capacitance of 284 F g-1 at a current density of 0.1 A g-1 and a remarkable capacity retention of 64.8% when the current density increases by 1000 times to 100 A g-1.

  18. Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

    Science.gov (United States)

    Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

    2012-12-26

    There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

  19. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yuehua; Zhang, Mengke [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Zhang, Xinwen, E-mail: iamxwzhang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lai, Wenyong, E-mail: iamwylai@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Huang, Wei [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

    2017-06-15

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  20. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    International Nuclear Information System (INIS)

    Chen, Yuehua; Zhang, Mengke; Zhang, Xinwen; Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli; Lai, Wenyong; Huang, Wei

    2017-01-01

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  1. Performance Evaluation of Absorbent Solution for Draw Solute Recovery in Forward Osmosis Desalination Process

    International Nuclear Information System (INIS)

    Kim, Young; Lee, Jong Hoon; Lee, Kong Hoon; Kim, Yu-Chang; Oh, Dong Wook; Lee, Jungho

    2013-01-01

    Although forward osmosis desalination technology has drawn substantial attention as a next-generation desalination method, the energy efficiency of its draw solution treatment process should be improved for its commercialization. When ammonium bicarbonate is used as the draw solute, the system consists of forward-osmosis membrane modules, draw solution separation and recovery processes. Mixed gases of ammonia and carbon dioxide generated during the draws solution separation, need to be recovered to re-concentrate ammonium bicarbonate solution, for continuous operation as well as for the economic feasibility. The diluted ammonium bicarbonate solution has been proposed as the absorbent for the draw solution regeneration. In this study, experiments are conducted to investigate performance and features of the absorption corresponding to absorbent concentration. It is concluded that ammonium bicarbonate solution can be used to recover the generated ammonia and carbon dioxide. The results will be applied to design and operation of pilot-scale forward-osmosis desalination system

  2. Performance Evaluation of Absorbent Solution for Draw Solute Recovery in Forward Osmosis Desalination Process

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young; Lee, Jong Hoon; Lee, Kong Hoon; Kim, Yu-Chang; Oh, Dong Wook; Lee, Jungho [Korea Institute of Machinery Materials, Daejeon (Korea, Republic of)

    2013-04-15

    Although forward osmosis desalination technology has drawn substantial attention as a next-generation desalination method, the energy efficiency of its draw solution treatment process should be improved for its commercialization. When ammonium bicarbonate is used as the draw solute, the system consists of forward-osmosis membrane modules, draw solution separation and recovery processes. Mixed gases of ammonia and carbon dioxide generated during the draws solution separation, need to be recovered to re-concentrate ammonium bicarbonate solution, for continuous operation as well as for the economic feasibility. The diluted ammonium bicarbonate solution has been proposed as the absorbent for the draw solution regeneration. In this study, experiments are conducted to investigate performance and features of the absorption corresponding to absorbent concentration. It is concluded that ammonium bicarbonate solution can be used to recover the generated ammonia and carbon dioxide. The results will be applied to design and operation of pilot-scale forward-osmosis desalination system.

  3. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Zhang Guangchen; Feng Shiwei; Li Jingwan; Guo Chunsheng; Zhao Yan

    2012-01-01

    Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm −1 is achieved, corresponding to a temperature accuracy of ±3.2 °C for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8 °C/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally. (semiconductor devices)

  4. Ion Transport in Confined Geometries below the Nanoscale: Access Resistance Dominates Protein Channel Conductance in Diluted Solutions.

    Science.gov (United States)

    Alcaraz, Antonio; López, M Lidón; Queralt-Martín, María; Aguilella, Vicente M

    2017-10-24

    Synthetic nanopores and mesoscopic protein channels have common traits like the importance of electrostatic interactions between the permeating ions and the nanochannel. Ion transport at the nanoscale occurs under confinement conditions so that the usual assumptions made in microfluidics are challenged, among others, by interfacial effects such as access resistance (AR). Here, we show that a sound interpretation of electrophysiological measurements in terms of channel ion selective properties requires the consideration of interfacial effects, up to the point that they dominate protein channel conductance in diluted solutions. We measure AR in a large ion channel, the bacterial porin OmpF, by means of single-channel conductance measurements in electrolyte solutions containing varying concentrations of high molecular weight PEG, sterically excluded from the pore. Comparison of experiments performed in charged and neutral planar membranes shows that lipid surface charges modify the ion distribution and determine the value of AR, indicating that lipid molecules are more than passive scaffolds even in the case of large transmembrane proteins. We also found that AR may reach up to 80% of the total channel conductance in diluted solutions, where electrophysiological recordings register essentially the AR of the system and depend marginally on the pore characteristics. These findings may have implications for several low aspect ratio biological channels that perform their physiological function in a low ionic strength and macromolecule crowded environment, just the two conditions enhancing the AR contribution.

  5. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  6. Development and applications of the channel network model for simulations of flow and solute transport in fractured rock

    International Nuclear Information System (INIS)

    Gylling, B.

    1997-01-01

    The Channel Network model and its computer implementation, the code CHAN3D, for simulations of fluid flow and transport of solutes have been developed. The tool may be used for performance and safety assessments of deep lying repositories in fractured rocks for nuclear and other hazardous wastes, e.g. chemical wastes. It may also be used to simulate and interpret field experiments of flow and transport in large or small scale. Fluid flow and solute transport in fractured media are of interest in the performance assessment of a repository for hazardous waste, located at depth in crystalline rock, with potential release of solutes. Fluid flow in fractured rock is found to be very unevenly distributed due to the heterogeneity of the medium. The water will seek the easiest path, channels, under a prevailing pressure gradient. Solutes in the flowing water may be transported through preferential paths and migrate from the water in the fractures into the stagnant water in the rock matrix. There, sorbing solutes may be sorbed on the micro surfaces within the matrix. The diffusion into the matrix and the sorption process may significantly retard the transport of species and increase the time available for radionuclide decay. Channelling and matrix diffusion contribute to the dispersion of solutes in the water. Important for performance assessment is that channeling may cause a portion of the solutes to arrive much faster than the rest of the solutes. Simulations of field experiments at the Aespoe Hard Rock Laboratory using the Channel Network model have been performed. The application of the model to the site and the simulation results of the pumping and tracer tests are presented. The results show that the model is capable of describing the hydraulic gradient and of predicting flow rates and tracer transport obtained in the experiments. The data requirements for the Channel Network model have been investigated to determine which data are the most important for predictions

  7. Solution processed white light photodetector based N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor

    Energy Technology Data Exchange (ETDEWEB)

    Tozlu, Cem, E-mail: tozlu.cem@gmail.com [Department of Energy System Engineering, Faculty of Engineering, Karamanoğlu Mehmetbey University, 70100 Karaman (Turkey); Kus, Mahmut [Department of Chemical Engineering, Selcuk University, Konya 42075 (Turkey); Advanced Technology Research and Application Center, Selcuk University, Konya 42075 (Turkey); Can, Mustafa [Department of Engineering Sciences, Faculty of Engineering, Izmir Katip Celebi University, Cigli, 35620 Izmir (Turkey); Ersöz, Mustafa [Advanced Technology Research and Application Center, Selcuk University, Konya 42075 (Turkey); Department of Chemistry, Selcuk University, Konya 42075 (Turkey)

    2014-10-31

    In this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric dielectric under different white light illuminations. N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide and divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron mobility of 0.6 × 10{sup −3} cm{sup 2}/V·s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor. The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively. These findings indicate that perylene diimide is a promising material for use on organic based phototransistors. - Highlights: • A solution processed n-type organic phototransistor was fabricated. • The geometry of device allows to be used double sided photo-sensor to detect light. • The accumulation of charge carrier is effected strongly by illumination intensity. • The current amplification was observed clearly under illumination without gate bias.

  8. Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O2 mixed-plasma treatment

    International Nuclear Information System (INIS)

    Kim, Kwan-Soo; Hwang, Yeong-Hyeon; Hwang, In-Chan; Cho, Won-Ju

    2014-01-01

    We investigated the effects of Ar and O 2 treatment and of Ar/O 2 mixed plasma treatment on the electrical characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The electrical performance and the instability of a-IGZO TFTs were significantly improved by the plasma treatments. The plasma treatments reduced the carbon-based residual contamination that acted as possible trap sites. In particular, the O 2 -plasma treatment produced a significant improvement in the reliability of a-IGZO TFTs when compared with the Ar-plasma-treated device, owing to the elimination of residual carbon in the active channel of the solution-processed a-IGZO. However, the optimized improvement of the solution-processed a-IGZO TFT under a gate bias stress was obtained for the device treated with an Ar/O 2 mixed-gas plasma. The plasma treatment in the Ar/O 2 -mixed ambience remarkably enhanced not only the reliability but also the electrical performance of the a-IGZO TFT; the on/off-current ratio, the field-effect mobility, and the subthreshold slope were 6.78 x 10 7 , 1.24 cm 2 /V·s, and 513 mV/dec, respectively.

  9. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  10. Highly anisotropic mobility in solution processed TIPS-pentacene film studied by independently driven four GaIn probes

    Science.gov (United States)

    Yoshimoto, Shinya; Takahashi, Kohtaro; Suzuki, Mitsuharu; Yamada, Hiroko; Miyahara, Ryosuke; Mukai, Kozo; Yoshinobu, Jun

    2017-08-01

    We have studied in-plane anisotropy in the field-effect mobility of solution-processed organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene by using independently driven four gallium indium (Ga-In) probes. Liquid-metal Ga-In probes are highly effective for reproducible conductivity measurements of organic thin films. We demonstrated that a high mobility anisotropy of 44 was obtained by using a square four-probe method and a feedback circuit to keep the channel potential constant. The present method minimized the influences of the contact resistance and the insensitivity of anisotropy in a linear arrangement in two-dimensional field-effect transistors.

  11. Fluctuation theorem for channel-facilitated membrane transport of interacting and noninteracting solutes.

    Science.gov (United States)

    Berezhkovskii, Alexander M; Bezrukov, Sergey M

    2008-05-15

    In this paper, we discuss the fluctuation theorem for channel-facilitated transport of solutes through a membrane separating two reservoirs. The transport is characterized by the probability, P(n)(t), that n solute particles have been transported from one reservoir to the other in time t. The fluctuation theorem establishes a relation between P(n)(t) and P-(n)(t): The ratio P(n)(t)/P-(n)(t) is independent of time and equal to exp(nbetaA), where betaA is the affinity measured in the thermal energy units. We show that the same fluctuation theorem is true for both single- and multichannel transport of noninteracting particles and particles which strongly repel each other.

  12. Electrochemical Preparation of Polyaniline Nanowires with the Used Electrolyte Solution Treated with the Extraction Process and Their Electrochemical Performance

    Directory of Open Access Journals (Sweden)

    Ying Wu

    2018-02-01

    Full Text Available Electrochemical polymerization of aniline is one of the most promising methods to prepare polyaniline (PANI materials. However, during this process, the electrolyte solution must be replaced after electropolymerization of a certain time because of the generation and the accumulation of the by-products, which have significant effects on the morphology, purity and properties of PANI products. Treatment and recycling of the used electrolyte solution are worthwhile to study to reduce the high treatment cost of the used electrolyte solution containing aniline and its polymerization by-products. Here, the composition of the used electrolyte solution was separated and determined by high performance liquid chromatography coupled with diode array detection (HPLC-DAD in the range of ultraviolet and visible (UV-Vis light. The analysis results revealed that the used electrolyte solution consisted of aniline, p-hydroquinone (HQ, p-benzoquinone (BQ, co-oligomers of aniline and p-benzoquinone (CAB and acid. Then, n-octanol and 2-octanone were selected as extracts to remove HQ, BQ and CAB from the used electrolyte solution. Following that, the recycled electrolyte solution was prepared by adjusting the concentration of aniline and acid of the aqueous phase, and the electrochemical polymerization process was conducted. Finally, the obtained PANI was characterized by scanning electron microscope (SEM and electrochemical methods. The experimental results clearly demonstrate that the morphology and specific capacitance of PANI produced from the recycled electrolyte solution can be recovered completely. This research paves the way for reusing the used electrolyte solution for aniline electrochemical polymerization.

  13. Electrochemical Preparation of Polyaniline Nanowires with the Used Electrolyte Solution Treated with the Extraction Process and Their Electrochemical Performance.

    Science.gov (United States)

    Wu, Ying; Wang, Jixiao; Ou, Bin; Zhao, Song; Wang, Zhi; Wang, Shichang

    2018-02-12

    Electrochemical polymerization of aniline is one of the most promising methods to prepare polyaniline (PANI) materials. However, during this process, the electrolyte solution must be replaced after electropolymerization of a certain time because of the generation and the accumulation of the by-products, which have significant effects on the morphology, purity and properties of PANI products. Treatment and recycling of the used electrolyte solution are worthwhile to study to reduce the high treatment cost of the used electrolyte solution containing aniline and its polymerization by-products. Here, the composition of the used electrolyte solution was separated and determined by high performance liquid chromatography coupled with diode array detection (HPLC-DAD) in the range of ultraviolet and visible (UV-Vis) light. The analysis results revealed that the used electrolyte solution consisted of aniline, p-hydroquinone (HQ), p-benzoquinone (BQ), co-oligomers of aniline and p-benzoquinone (CAB) and acid. Then, n-octanol and 2-octanone were selected as extracts to remove HQ, BQ and CAB from the used electrolyte solution. Following that, the recycled electrolyte solution was prepared by adjusting the concentration of aniline and acid of the aqueous phase, and the electrochemical polymerization process was conducted. Finally, the obtained PANI was characterized by scanning electron microscope (SEM) and electrochemical methods. The experimental results clearly demonstrate that the morphology and specific capacitance of PANI produced from the recycled electrolyte solution can be recovered completely. This research paves the way for reusing the used electrolyte solution for aniline electrochemical polymerization.

  14. Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection

    International Nuclear Information System (INIS)

    Wendt, J. R.; Warren, M. E.; Sweatt, W. C.; Bailey, C. G.; Matzke, C. M.; Arnold, D. W.; Allerman, A. A.; Carter, T. R.; Asbill, R. E.; Samora, S.

    1999-01-01

    We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection. The optical system consists of a vertical cavity surface-emitting laser (VCSEL), two high performance microlenses, and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. The design uses substrate-mode propagation within the fused silica substrate. Two generations of optical subsystems are described. The first generation design has a 6 mm optical length and is integrated directly onto the capillary channel-containing substrate. The second generation design separates the optical system onto its own substrate module and the optical path length is further compressed to 3.5 mm. The first generation design has been tested using direct fluorescence detection with a 750 nm VCSEL pumping a 10 -4 M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and is adequate for system sensitivity requirements. (c) 1999 American Vacuum Society

  15. Exploration of polyelectrolytes as draw solutes in forward osmosis processes

    KAUST Repository

    Ge, Qingchun

    2012-03-01

    The development of the forward osmosis (FO) process has been constrained by the slow development of appropriate draw solutions. Two significant concerns related to draw solutions are the draw solute leakage and intensiveenergy requirement in recycling draw solutes after the FO process. FO would be much attractive if there is no draw solute leakage and the recycle of draw solutes is easy and economic. In this study, polyelectrolytes of a series of polyacrylic acid sodium salts (PAA-Na), were explored as draw solutes in the FO process. The characteristics of high solubility in water and flexibility in structural configuration ensure the suitability of PAA-Na as draw solutes and their relative ease in recycle through pressure-driven membrane processes. The high water flux with insignificant salt leakage in the FO process and the high salt rejection in recycle processes reveal the superiority of PAA-Na to conventional ionic salts, such as NaCl, when comparing their FO performance via the same membranes. The repeatable performance of PAA-Na after recycle indicates the absence of any aggregation problems. The overall performance demonstrates that polyelectrolytes of PAA-Na series are promising as draw solutes, and the new concept of using polyelectrolytes as draw solutes in FO processes is applicable. © 2011 Elsevier Ltd.

  16. Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.

    Science.gov (United States)

    Kim, Si Joon; Jung, Joohye; Lee, Keun Woo; Yoon, Doo Hyun; Jung, Tae Soo; Dugasani, Sreekantha Reddy; Park, Sung Ha; Kim, Hyun Jae

    2013-11-13

    A high-sensitivity, label-free method for detecting deoxyribonucleic acid (DNA) using solution-processed oxide thin-film transistors (TFTs) was developed. Double-crossover (DX) DNA nanostructures with different concentrations of divalent Cu ion (Cu(2+)) were immobilized on an In-Ga-Zn-O (IGZO) back-channel surface, which changed the electrical performance of the IGZO TFTs. The detection mechanism of the IGZO TFT-based DNA biosensor is attributed to electron trapping and electrostatic interactions caused by negatively charged phosphate groups on the DNA backbone. Furthermore, Cu(2+) in DX DNA nanostructures generates a current path when a gate bias is applied. The direct effect on the electrical response implies that solution-processed IGZO TFTs could be used to realize low-cost and high-sensitivity DNA biosensors.

  17. Morphological Control for High Performance, Solution-Processed Planar Heterojunction Perovskite Solar Cells

    KAUST Repository

    Eperon, Giles E.

    2013-09-09

    Organometal trihalide perovskite based solar cells have exhibited the highest efficiencies to-date when incorporated into mesostructured composites. However, thin solid films of a perovskite absorber should be capable of operating at the highest efficiency in a simple planar heterojunction configuration. Here, it is shown that film morphology is a critical issue in planar heterojunction CH3NH3PbI3-xCl x solar cells. The morphology is carefully controlled by varying processing conditions, and it is demonstrated that the highest photocurrents are attainable only with the highest perovskite surface coverages. With optimized solution based film formation, power conversion efficiencies of up to 11.4% are achieved, the first report of efficiencies above 10% in fully thin-film solution processed perovskite solar cells with no mesoporous layer. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Joint Linear Processing for an Amplify-and-Forward MIMO Relay Channel with Imperfect Channel State Information

    Directory of Open Access Journals (Sweden)

    Vandendorpe Luc

    2010-01-01

    Full Text Available The problem of jointly optimizing the source precoder, relay transceiver, and destination equalizer has been considered in this paper for a multiple-input-multiple-output (MIMO amplify-and-forward (AF relay channel, where the channel estimates of all links are assumed to be imperfect. The considered joint optimization problem is nonconvex and does not offer closed-form solutions. However, it has been shown that the optimization of one variable when others are fixed is a convex optimization problem which can be efficiently solved using interior-point algorithms. In this context, an iterative technique with the guaranteed convergence has been proposed for the AF MIMO relay channel that includes the direct link. It has been also shown that, for the double-hop relay case without the receive-side antenna correlations in each hop, the global optimality can be confirmed since the structures of the source precoder, relay transceiver, and destination equalizer have closed forms and the remaining joint power allocation can be solved using Geometric Programming (GP technique under high signal-to-noise ratio (SNR approximation. In the latter case, the performance of the iterative technique and the GP method has been compared with simulations to ensure that the iterative approach gives reasonably good solutions with an acceptable complexity. Moreover, simulation results verify the robustness of the proposed design when compared to the nonrobust design that assumes estimated channels as actual channels.

  19. The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs

    Energy Technology Data Exchange (ETDEWEB)

    Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Chen, P.-G. [Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2015-08-17

    The capping stressed SiN film is one of the most important process steps for the dislocation stress memorization technique (D-SMT), which has been used widely in the current industry, for the electron mobility booster in the n-type transistor beyond the 32/28 nm technology node. In this work, we found that the different stress-level SiN capping films influence the crystal re-growth velocities along different directions including [100] and [110] directions in Ge a lot. It can be further used to optimize the dislocation angle in the transistor during the D-SMT process and then results in the largest channel stress distribution to boost the device performance in the Ge n-FinFETs. Based on the theoretical calculation and experimental demonstration, it shows that the Ge three dimensional (3D) n-FinFETs device performance is improved ∼55% with the usage of +3 GPa tensile stressed SiN capping film. The channel stress and dislocation angle is ∼2.5 GPa and 30°, measured by the atomic force microscope-Raman technique and transmission electron microscopy, respectively.

  20. High-Pressure-High-Temperature Processing Reduces Maillard Reaction and Viscosity in Whey Protein-Sugar Solutions.

    Science.gov (United States)

    Avila Ruiz, Geraldine; Xi, Bingyan; Minor, Marcel; Sala, Guido; van Boekel, Martinus; Fogliano, Vincenzo; Stieger, Markus

    2016-09-28

    The aim of the study was to determine the influence of pressure in high-pressure-high-temperature (HPHT) processing on Maillard reactions and protein aggregation of whey protein-sugar solutions. Solutions of whey protein isolate containing either glucose or trehalose at pH 6, 7, and 9 were treated by HPHT processing or conventional high-temperature (HT) treatments. Browning was reduced, and early and advanced Maillard reactions were retarded under HPHT processing at all pH values compared to HT treatment. HPHT induced a larger pH drop than HT treatments, especially at pH 9, which was not associated with Maillard reactions. After HPHT processing at pH 7, protein aggregation and viscosity of whey protein isolate-glucose/trehalose solutions remained unchanged. It was concluded that HPHT processing can potentially improve the quality of protein-sugar-containing foods, for which browning and high viscosities are undesired, such as high-protein beverages.

  1. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Science.gov (United States)

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-04-25

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  2. A multi-channel high-resolution time recorder system

    International Nuclear Information System (INIS)

    Zhang Lingyun; Yang Xiaojun; Song Kezhu; Wang Yanfang

    2004-01-01

    This paper introduces a multi-channel and high-speed time recorder system, which was originally designed to work in the experiments of quantum cryptography research. The novelty of the system is that all the hardware logic is performed by only one FPGA. The system can achieve several desirable features, such as simplicity, high resolution and high processing speed. (authors)

  3. Long quantum channels for high-quality entanglement transfer

    International Nuclear Information System (INIS)

    Banchi, L; Apollaro, T J G; Cuccoli, A; Verrucchi, P; Vaia, R

    2011-01-01

    High-quality quantum-state and entanglement transfer can be achieved in an unmodulated spin bus operating in the ballistic regime, which occurs when the endpoint qubits A and B are nonperturbatively coupled to the chain by a suitable exchange interaction j 0 . Indeed, the transition amplitude characterizing the transfer quality exhibits a maximum for a finite optimal value j opt 0 (N), where N is the channel length. We show that j opt 0 (N) scales as N -1/6 for large N and that it ensures a high-quality entanglement transfer even in the limit of arbitrarily long channels, almost independently of the channel initialization. For instance, for any chain length the average quantum-state transmission fidelity exceeds 90% and decreases very little in a broad neighbourhood of j opt 0 (N). We emphasize that, taking the reverse point of view, should j 0 be experimentally constrained, high-quality transfer can still be obtained by adjusting the channel length to its optimal value. (paper)

  4. Channel Characteristics and Transmission Performance for Various Channel Configurations at 60 GHz

    Directory of Open Access Journals (Sweden)

    Yang Haibing

    2007-01-01

    Full Text Available Extensive measurements are conducted in room environments at 60 GHz to analyze the channel characteristics for various channel configurations. Channel parameters retrieved from measurements are presented and analyzed based on generic channel models. Particularly, a simple single-cluster model is applied for the parameter retrieval and performance evaluation. By this model, power delay profiles are simply described by a -factor, a root-mean-squared delay spread, and a shape parameter. The considered channels are configured with the combination of omnidirectional, fan-beam, and pencil-beam antennas at transmitter and receiver sides. Both line-of-sight (LOS and non-LOS (NLOS channels are considered. Further, to evaluate the transmission performance, we analyze the link budget in the considered environments, then design and simulate an OFDM system with a data rate of 2 Gbps to compare the bit-error-rate (BER performance by using the measured and modeled channels. Both coded and uncoded OFDM systems are simulated. It is observed that the BER performance agrees well for the measured and modeled channels. In addition, directive configurations can provide sufficient link margins and BER performance for high data rate communications. To increase the coverage and performance in the NLOS area, it is preferable to apply directive antennas.

  5. Channel Characteristics and Transmission Performance for Various Channel Configurations at 60 GHz

    Directory of Open Access Journals (Sweden)

    Haibing Yang

    2007-05-01

    Full Text Available Extensive measurements are conducted in room environments at 60 GHz to analyze the channel characteristics for various channel configurations. Channel parameters retrieved from measurements are presented and analyzed based on generic channel models. Particularly, a simple single-cluster model is applied for the parameter retrieval and performance evaluation. By this model, power delay profiles are simply described by a K-factor, a root-mean-squared delay spread, and a shape parameter. The considered channels are configured with the combination of omnidirectional, fan-beam, and pencil-beam antennas at transmitter and receiver sides. Both line-of-sight (LOS and non-LOS (NLOS channels are considered. Further, to evaluate the transmission performance, we analyze the link budget in the considered environments, then design and simulate an OFDM system with a data rate of 2 Gbps to compare the bit-error-rate (BER performance by using the measured and modeled channels. Both coded and uncoded OFDM systems are simulated. It is observed that the BER performance agrees well for the measured and modeled channels. In addition, directive configurations can provide sufficient link margins and BER performance for high data rate communications. To increase the coverage and performance in the NLOS area, it is preferable to apply directive antennas.

  6. High Performance Processing and Analysis of Geospatial Data Using CUDA on GPU

    Directory of Open Access Journals (Sweden)

    STOJANOVIC, N.

    2014-11-01

    Full Text Available In this paper, the high-performance processing of massive geospatial data on many-core GPU (Graphic Processing Unit is presented. We use CUDA (Compute Unified Device Architecture programming framework to implement parallel processing of common Geographic Information Systems (GIS algorithms, such as viewshed analysis and map-matching. Experimental evaluation indicates the improvement in performance with respect to CPU-based solutions and shows feasibility of using GPU and CUDA for parallel implementation of GIS algorithms over large-scale geospatial datasets.

  7. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

    International Nuclear Information System (INIS)

    Yeon Kwon, Jang; Kyeong Jeong, Jae

    2015-01-01

    This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed. (invited review)

  8. Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Asubar, Joel T., E-mail: joel@rciqe.hokudai.ac.jp; Yatabe, Zenji; Hashizume, Tamotsu [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo (Japan); Japan Science and Technology Agency (JST), CREST, 102-0075 Tokyo (Japan)

    2014-08-04

    Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I{sub D}-V{sub DS} curves at high V{sub DS} regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of ∼350 K and power dissipation of ∼9 W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.

  9. Multi-channel counter-current chromatography for high-throughput fractionation of natural products for drug discovery.

    Science.gov (United States)

    Wu, Shihua; Yang, Lu; Gao, Yuan; Liu, Xiaoyue; Liu, Feiyan

    2008-02-08

    A multi-channel counter-current chromatography (CCC) method has been designed and fabricated for the high-throughput fractionation of natural products without complications sometimes encountered with other conventional chromatographic systems, such as irreversible adsorptive constituent losses and deactivation, tailing of solute peaks and contamination. It has multiple independent CCC channels and each channel connects independent separation column(s) by parallel flow tubes, and thus the multi-channel CCC apparatus can achieve simultaneously two or more independent chromatographic processes. Furthermore, a high-throughput CCC fractionation method for natural products has been developed by a combination of a new three-channel CCC apparatus and conventional parallel chromatographic devices including pumps, sample injectors, effluent detectors and collectors, and its performance has been displayed on the fractionation of ethyl acetate extracts of three natural materials Solidago canadensis, Suillus placidus, and Trichosanthes kirilowii, which are found to be potent cytotoxic to tumor cell lines in the course of screening the antitumor candidates. By combination of biological screening programs and preparative high-performance liquid chromatography (HPLC) purification, 22.8 mg 6 beta-angeloyloxykolavenic acid and 29.4 mg 6 beta-tigloyloxykolavenic acid for S. canadensis, 25.3mg suillin for S. placidus, and 6.8 mg 23,24-dihydrocucurbitacin B for T. Kirilowii as their major cytotoxic principles were isolated from each 1000 mg crude ethyl acetate extract. Their chemical structures were characterized by electrospray ionization mass spectrometry, one- and two-dimensional nuclear magnetic resonance. The overall results indicate the multi-channel CCC is very useful for high-throughput fractionation of natural products for drug discovery in spite of the solvent balancing requirement and the lower resolution of the shorter CCC columns.

  10. Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

    Science.gov (United States)

    Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

    2018-04-01

    A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

  11. A user configurable data acquisition and signal processing system for high-rate, high channel count applications

    International Nuclear Information System (INIS)

    Salim, Arwa; Crockett, Louise; McLean, John; Milne, Peter

    2012-01-01

    Highlights: ► The development of a new digital signal processing platform is described. ► The system will allow users to configure the real-time signal processing through software routines. ► The architecture of the DRUID system and signal processing elements is described. ► A prototype of the DRUID system has been developed for the digital chopper-integrator. ► The results of acquisition on 96 channels at 500 kSamples/s per channel are presented. - Abstract: Real-time signal processing in plasma fusion experiments is required for control and for data reduction as plasma pulse times grow longer. The development time and cost for these high-rate, multichannel signal processing systems can be significant. This paper proposes a new digital signal processing (DSP) platform for the data acquisition system that will allow users to easily customize real-time signal processing systems to meet their individual requirements. The D-TACQ reconfigurable user in-line DSP (DRUID) system carries out the signal processing tasks in hardware co-processors (CPs) implemented in an FPGA, with an embedded microprocessor (μP) for control. In the fully developed platform, users will be able to choose co-processors from a library and configure programmable parameters through the μP to meet their requirements. The DRUID system is implemented on a Spartan 6 FPGA, on the new rear transition module (RTM-T), a field upgrade to existing D-TACQ digitizers. As proof of concept, a multiply-accumulate (MAC) co-processor has been developed, which can be configured as a digital chopper-integrator for long pulse magnetic fusion devices. The DRUID platform allows users to set options for the integrator, such as the number of masking samples. Results from the digital integrator are presented for a data acquisition system with 96 channels simultaneously acquiring data at 500 kSamples/s per channel.

  12. ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis

    Science.gov (United States)

    Jha, Shrawan Kumar; Luan, Chunyan; To, Chap Hang; Kutsay, Oleksandr; Kováč, Jaroslav; Zapien, Juan Antonio; Bello, Igor; Lee, Shuit-Tong

    2012-11-01

    Pure ultra-violet (UV) (378 nm) electroluminescence (EL) from zinc oxide (ZnO)-nanorod-array/p-gallium nitride (GaN) light emitting devices (LEDs) is demonstrated at low bias-voltages (˜4.3 V). Devices were prepared merely by solution-synthesis, without any involvement of sophisticated material growth techniques or preparation methods. Three different luminescence characterization techniques, i.e., photo-luminescence, cathodo-luminescence, and EL, provided insight into the nature of the UV emission mechanism in solution-synthesized LEDs. Bias dependent EL behaviour revealed blue-shift of EL peaks and increased peak sharpness, with increasing the operating voltage. Accelerated bias stress tests showed very stable and repeatable electrical and EL performance of the solution-synthesized nanorod LEDs.

  13. Performance Analysis of Simple Channel Feedback Schemes for a Practical OFDMA System

    DEFF Research Database (Denmark)

    Pedersen, Klaus, I.; Kolding, Troels; Kovacs, Istvan

    2009-01-01

    In this paper, we evaluate the tradeoff between the amount of uplink channel feedback information and the orthogonal frequency-division multiple access (OFDMA) downlink performance with opportunistic frequency-domain packet scheduling. Three candidate channel feedback schemes are investigated......, including practical aspects, such as the effects of terminal measurement errors, bandwidth measurement granularity, quantization, and uplink signaling delays. The performance is evaluated by means of system-level simulations with detailed modeling of various radio resource-management algorithms, etc. Our...... results show that the optimal tradeoff between the channel feedback and the downlink OFDMA system performance depends on the radio channel frequency coherence bandwidth. We conclude that the so-called average best-M scheme is the most attractive channel feedback solution, where only the average channel...

  14. Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

    Science.gov (United States)

    Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

    2018-03-01

    The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

  15. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng; Chen, Yin; Ma, Chun; Buttner, Ulrich; Leo, Karl; Wu, Tao

    2016-01-01

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  16. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng

    2016-12-13

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  17. Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

    International Nuclear Information System (INIS)

    Pu, Haifeng; Zhou, Qianfei; Yue, Lan; Zhang, Qun

    2013-01-01

    We reported the impact of oxygen plasma treatment on solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Plasma-treated devices showed higher mobility, larger on/off current ratio, but a monotonically increased SS with plasma treatment time as well. The phenomenon was mainly due to two components in oxygen plasma, atomic oxygen and O 2 + , according to the photoluminescence (PL) measurement. Atomic oxygen reacted with oxygen vacancies in channel layer resulting in an improved mobility, and O 2 + tends to aggregated at the surface acting as trapping states simultaneously. Our study suggests that moderate oxygen plasma treatment can be adopted to improve the device performance, while O 2 + should be eliminated to obtain good interfacial states.

  18. Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O{sub 2} mixed-plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kwan-Soo; Hwang, Yeong-Hyeon; Hwang, In-Chan; Cho, Won-Ju [Kwangwoon University, Seoul (Korea, Republic of)

    2014-08-15

    We investigated the effects of Ar and O{sub 2} treatment and of Ar/O{sub 2} mixed plasma treatment on the electrical characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The electrical performance and the instability of a-IGZO TFTs were significantly improved by the plasma treatments. The plasma treatments reduced the carbon-based residual contamination that acted as possible trap sites. In particular, the O{sub 2}-plasma treatment produced a significant improvement in the reliability of a-IGZO TFTs when compared with the Ar-plasma-treated device, owing to the elimination of residual carbon in the active channel of the solution-processed a-IGZO. However, the optimized improvement of the solution-processed a-IGZO TFT under a gate bias stress was obtained for the device treated with an Ar/O{sub 2} mixed-gas plasma. The plasma treatment in the Ar/O{sub 2}-mixed ambience remarkably enhanced not only the reliability but also the electrical performance of the a-IGZO TFT; the on/off-current ratio, the field-effect mobility, and the subthreshold slope were 6.78 x 10{sup 7}, 1.24 cm{sup 2}/V·s, and 513 mV/dec, respectively.

  19. Solution-Processed Molecular Organic Solar cell: Relationship between Morphology and Device Performance

    KAUST Repository

    Babics, Maxime

    2018-05-09

    In the last decade, organic photovoltaics (OPV) have gained considerable attention with a rapid improvement of power conversion efficiency (PCE) from 5% to more than 13%. At the origin of the gradual efficiency improvements are (i) the rationalization of material design and (ii) systematic optimization of film processing condition. OPV can have a key role in markets such as building-integrated photovoltaics (BIPV). The main advantages of organic solar cells are semitransparency, low weight, good performance at low light intensity, flexibility and potential low-cost module manufacture through solution processed-based technologies. In solution processed OPV, the active layer that converts photons into electric charges is a composite of two organic compounds, a donor (D) and an acceptor (A) where the best morphology is achieved via the so-called bulk heterojunction (BHJ): an interpenetrating phase-separated D-A network. Historically, research has been focused on polymer donors and guidelines about morphology and film processing have been established. However recent studies have shown that small-molecule (SM) donors can rival their polymer counterparts in performance. The advantages of SM are a defined molecular weight, the ease of purification and a good batch-to-batch reproducibility. Using this class of material the existing guidelines have to be adjusted and refined. In this dissertation, using new SM synthesized in our laboratory, solution-processed organic solar cells are fabricated in which the morphology of the active layer is controlled by thermal annealing, the use of additive or solvent vapor annealing. In-depth analyses of the morphology are correlated to charge generation, recombination and extraction inferred from device physics. In the first part of the dissertation, using a small amount of 1,8-Diiodooctane additive that acts as a plasticizer, it is found that the D-A domains do not necessarily need to be pure and that mixed domains can also result in

  20. Solution-Processible Crystalline NiO Nanoparticles for High-Performance Planar Perovskite Photovoltaic Cells.

    Science.gov (United States)

    Kwon, Uisik; Kim, Bong-Gi; Nguyen, Duc Cuong; Park, Jong-Hyeon; Ha, Na Young; Kim, Seung-Joo; Ko, Seung Hwan; Lee, Soonil; Lee, Daeho; Park, Hui Joon

    2016-07-28

    In this work, we report on solution-based p-i-n-type planar-structured CH3NH3PbI3 perovskite photovoltaic (PV) cells, in which precrystallized NiO nanoparticles (NPs) without post-treatment are used to form a hole transport layer (HTL). X-ray diffraction and high-resolution transmission electron microscopy showed the crystallinity of the NPs, and atomic force microscopy and scanning electron microscopy confirmed the uniform surfaces of the resultant NiO thin film and the subsequent perovskite photoactive layer. Compared to the conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) HTL, the NiO HTL had excellent energy-level alignment with that of CH3NH3PbI3 and improved electron-blocking capability, as analyzed by photoelectron spectroscopy and diode modeling, resulting in Voc ~0.13 V higher than conventional PSS-based devices. Consequently, a power conversion efficiency (PCE) of 15.4% with a high fill factor (FF, 0.74), short-circuit current density (Jsc, 20.2 mA·cm(-2)), and open circuit voltage (Voc, 1.04 V) having negligible hysteresis and superior air stability has been achieved.

  1. SISYPHUS: A high performance seismic inversion factory

    Science.gov (United States)

    Gokhberg, Alexey; Simutė, Saulė; Boehm, Christian; Fichtner, Andreas

    2016-04-01

    branches for the static process setup, inversion iterations, and solver runs, each branch specifying information at the event, station and channel levels. The workflow management framework is based on an embedded scripting engine that allows definition of various workflow scenarios using a high-level scripting language and provides access to all available inversion components represented as standard library functions. At present the SES3D wave propagation solver is integrated in the solution; the work is in progress for interfacing with SPECFEM3D. A separate framework is designed for interoperability with an optimization module; the workflow manager and optimization process run in parallel and cooperate by exchanging messages according to a specially designed protocol. A library of high-performance modules implementing signal pre-processing, misfit and adjoint computations according to established good practices is included. Monitoring is based on information stored in the inversion state database and at present implements a command line interface; design of a graphical user interface is in progress. The software design fits well into the common massively parallel system architecture featuring a large number of computational nodes running distributed applications under control of batch-oriented resource managers. The solution prototype has been implemented on the "Piz Daint" supercomputer provided by the Swiss Supercomputing Centre (CSCS).

  2. Performance-complexity tradeoff in sequential decoding for the unconstrained AWGN channel

    KAUST Repository

    Abediseid, Walid

    2013-06-01

    In this paper, the performance limits and the computational complexity of the lattice sequential decoder are analyzed for the unconstrained additive white Gaussian noise channel. The performance analysis available in the literature for such a channel has been studied only under the use of the minimum Euclidean distance decoder that is commonly referred to as the lattice decoder. Lattice decoders based on solutions to the NP-hard closest vector problem are very complex to implement, and the search for low complexity receivers for the detection of lattice codes is considered a challenging problem. However, the low computational complexity advantage that sequential decoding promises, makes it an alternative solution to the lattice decoder. In this work, we characterize the performance and complexity tradeoff via the error exponent and the decoding complexity, respectively, of such a decoder as a function of the decoding parameter - the bias term. For the above channel, we derive the cut-off volume-to-noise ratio that is required to achieve a good error performance with low decoding complexity. © 2013 IEEE.

  3. Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

    2015-10-15

    Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

  4. Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

    KAUST Repository

    Hellstrom, Sondra L.; Jin, Run Zhi; Stoltenberg, Randall M.; Bao, Zhenan

    2010-01-01

    We report patterned deposition of carbon nanotube/conjugated polymer composites from solution with high nanotube densities and excellent feature resolution. Such composites are suited for use as electrodes in high-performance transistors

  5. Solution-processed inorganic copper(I) thiocyanate (CuSCN) hole transporting layers for efficient p–i–n perovskite solar cells

    KAUST Repository

    Zhao, Kui

    2015-08-27

    CuSCN is a highly transparent, highly stable, low cost and easy to solution process HTL that is proposed as a low cost replacement to existing organic and inorganic metal oxide hole transporting materials. Here, we demonstrate hybrid organic-inorganic perovskite-based p-i-n planar heterojunction solar cells using a solution-processed copper(I) thiocyanate (CuSCN) bottom hole transporting layer (HTL). CuSCN, with its high workfunction, increases the open circuit voltage (Voc) by 0.23 V to 1.06 V as compared with devices based on the well-known poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (0.83 V), resulting in a superior power conversion efficiency (PCE) of 10.8% without any notable hysteresis. Photoluminescence measurements suggest a similar efficiency of charge transfer at HTL/perovskite interface as PEDOT:PSS. However, we observe more efficient light harvesting in the presence of CuSCN at shorter wavelengths despite PEDOT:PSS being more transparent. Further investigation of the microstructure and morphology reveals differences in the crystallographic texture of the polycrystalline perovskite film, suggesting somewhat modified perovskite growth on the surface of CuSCN. The successful demonstration of the solution-processed inorganic HTL using simple and low temperature processing routes bodes well for the development of reliable and efficient flexible p-i-n perovskite modules or for integration as a front cell in hybrid tandem solar cells.

  6. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    International Nuclear Information System (INIS)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L; Joshi, L M; Nangru, S C

    2010-01-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  7. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Joshi, L M; Nangru, S C, E-mail: pramod@ipr.res.i [Central Electronics Engineering Research Institute, Pilani, Rajasthan 333 031 (India)

    2010-02-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  8. A high performance multi-channel preamplifier ASIC

    International Nuclear Information System (INIS)

    Yarema, R.J.; Zimmerman, T.; Williams, W.; Binkley, M.; Huffman, T.; Wagner, R.

    1992-01-01

    This paper reports on a new preamplifier ASIC that has been designed and built to improve performance of the VTPC (Vertex Time Projection Chamber) at Fermilab's Collliding Detector Facility. Design of the semicustom IC was completed using a Tektronix QuickChip 2S bipolar linear array. The ASIC has 6 channels on a chip and provides lower noise, higher gain, lower power, and lower mass packaging than the device which it replaces. Actual performance of the preamplifier was found to match very closely the simulated performance. To reduce the mass of the complete circuit board, bare IC dice were mounted directly on a G-10 substrate using COB (chip on board) techniques. The preamplifier and packaging should be applicable to numerous other systems

  9. A high performance multi-channel preamplifier ASIC

    Energy Technology Data Exchange (ETDEWEB)

    Yarema, R.J.; Zimmerman, T.; Williams, W.; Binkley, M.; Huffman, T.; Wagner, R.

    1991-11-01

    A new preamplifier ASIC has been designed and built to improve performance of the VTPC (Vertex Time Projection Chamber) at Fermilab's Colliding Detector Facility. Design of the semicustom IC was completed using a Tektronix Quick-Chip 2S bipolar linear array. The ASIC has 6 channels on a chip and provides lower noise, higher gain, lower power, and lower mass packaging than the device which it replaces. Actual performance of the preamplifier was found to match very closely the simulated performance. To reduce the mass of the complete circuit board, bare IC dice were mounted directly on a G-10 substrate using COB (chip on board) techniques. The preamplifier and packaging should be applicable to numerous other systems. 1 ref.

  10. A high performance multi-channel preamplifier ASIC

    International Nuclear Information System (INIS)

    Yarema, R.J.; Zimmerman, T.; Williams, W.; Binkley, M.; Huffman, T.; Wagner, R.

    1991-11-01

    A new preamplifier ASIC has been designed and built to improve performance of the VTPC (Vertex Time Projection Chamber) at Fermilab's Colliding Detector Facility. Design of the semicustom IC was completed using a Tektronix Quick-Chip 2S bipolar linear array. The ASIC has 6 channels on a chip and provides lower noise, higher gain, lower power, and lower mass packaging than the device which it replaces. Actual performance of the preamplifier was found to match very closely the simulated performance. To reduce the mass of the complete circuit board, bare IC dice were mounted directly on a G-10 substrate using COB (chip on board) techniques. The preamplifier and packaging should be applicable to numerous other systems. 1 ref

  11. High-Pressure-High-Temperature Processing Reduces Maillard Reaction and Viscosity in Whey Protein-Sugar Solutions

    NARCIS (Netherlands)

    Avila Ruiz, Geraldine; Xi, Bingyan; Minor, Marcel; Sala, Guido; Boekel, van Tiny; Fogliano, Vincenzo; Stieger, Markus

    2016-01-01

    The aim of the study was to determine the influence of pressure in high-pressure-high-temperature (HPHT) processing on Maillard reactions and protein aggregation of whey protein-sugar solutions. Solutions of whey protein isolate containing either glucose or trehalose at pH 6, 7, and 9 were

  12. Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D.; Seo, Jung-Woo T.; Chen, Kan-Sheng; Marks, Tobin J.; Hersam, Mark C.

    2015-10-14

    Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10–9 A/cm2 at 2 MV/cm and high capacitances of 245 nF/cm2. The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm2 V–1 s–1 at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics.

  13. An accurate mobility model for the I-V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation

    International Nuclear Information System (INIS)

    Chingyuan Wu; Yeongwen Daih

    1985-01-01

    In this paper an analytical mobility model is developed for the I-V characteristics of n-channel enhancement-mode MOSFETs, in which the effects of the two-dimensional electric fields in the surface inversion channel and the parasitic resistances due to contact and interconnection are included. Most importantly, the developed mobility model easily takes the device structure and process into consideration. In order to demonstrate the capabilities of the developed model, the structure- and process-oriented parameters in the present mobility model are calculated explicitly for an n-channel enhancement-mode MOSFET with single-channel boron implantation. Moreover, n-channel MOSFETs with different channel lengths fabricated in a production line by using a set of test keys have been characterized and the measured mobilities have been compared to the model. Excellent agreement has been obtained for all ranges of the fabricated channel lengths, which strongly support the accuracy of the model. (author)

  14. Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

    Science.gov (United States)

    Wang, Hongjuan; Han, Genquan; Jiang, Xiangwei; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2017-04-01

    In this work, the boosting effect on the performance of GeSn n-channel fin tunneling FET (nFinTFET) enabled by uniaxial tensile stress is investigated theoretically. As the fin rotates within the (001) plane, the uniaxial tensile stress is always along its direction. The electrical characteristics of tensile-stressed GeSn nFinTFETs with point and line tunneling modes are computed utilizing the technology computer aided design (TCAD) simulator in which the dynamic nonlocal band-to-band tunneling (BTBT) algorithm is employed. In comparison with the relaxed devices, tensile-stressed GeSn nFinTFETs achieve a substantial enhancement in band-to-band tunneling generation rate (G BTBT) and on-state current I ON owing to the reduced bandgap E G induced by the tensile stress. Performance improvement of GeSn nFinTFETs induced by tensile stress demonstrates a strong dependence on channel direction and tunneling modes. Under the same magnitude of stress, line-nFinTFETs obtain a more pronounced I ON enhancement over the transistors with point tunneling mode.

  15. Trade-off analysis of high-aspect-ratio-cooling-channels for rocket engines

    International Nuclear Information System (INIS)

    Pizzarelli, Marco; Nasuti, Francesco; Onofri, Marcello

    2013-01-01

    Highlights: • Aspect ratio has a significant effect on cooling efficiency and hydraulic losses. • Minimizing power loss is of paramount importance in liquid rocket engine cooling. • A suitable quasi-2D model is used to get fast cooling system analysis. • Trade-off with assigned weight, temperature, and channel height or wall thickness. • Aspect ratio is found that minimizes power loss in the cooling circuit. -- Abstract: High performance liquid rocket engines are often characterized by rectangular cooling channels with high aspect ratio (channel height-to-width ratio) because of their proven superior cooling efficiency with respect to a conventional design. However, the identification of the optimum aspect ratio is not a trivial task. In the present study a trade-off analysis is performed on a cooling channel system that can be of interest for rocket engines. This analysis requires multiple cooling channel flow calculations and thus cannot be efficiently performed by CFD solvers. Therefore, a proper numerical approach, referred to as quasi-2D model, is used to have fast and accurate predictions of cooling system properties. This approach relies on its capability of describing the thermal stratification that occurs in the coolant and in the wall structure, as well as the coolant warming and pressure drop along the channel length. Validation of the model is carried out by comparison with solutions obtained with a validated CFD solver. Results of the analysis show the existence of an optimum channel aspect ratio that minimizes the requested pump power needed to overcome losses in the cooling circuit

  16. Detection of a random signal in a multi-channel environment: a performance study

    International Nuclear Information System (INIS)

    Frenzel, K.Z.

    1986-01-01

    Performance of the optimal (likelihood ratio) test and suboptimal tests, including the normalized cross correlator and two energy detectors are compared for problems involving non-gaussian as well as gaussian statistics. Also, optimal one-channel processing is compared to optimal two-channel processing for equivalent total signal-to-noise ratios. Receiver operator characteristics (ROC) curves obtained by a combination of simulation and analytic methods are used to evaluate the performance of the processors. It was found that two-channel processing helps the detection performance the most when the noise levels are uncertain. This was true for all signal and noise densities studied. In cases where the noise levels and channel attenuations are known, or when only the attenuations are uncertain, the performance using optimal one-channel processing was close to that found using optimal two-channel processing. When comparing optimal processors to the three suboptimal processors, it was found that when the noise level in each channel is very uncertain, the performance of the normalized cross correlator is much closer to the optimal than that of either of the energy detectors. If, however, the noise levels are know with a fair degree of certainty, the performance of the energy detectors improves considerably, in some cases approaching the optimal performance

  17. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei

    2018-03-06

    Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This review surveys the recent advances in solution-based oxide TFTs, including n-type oxide semiconductors, oxide dielectrics and p-type oxide semiconductors. Firstly, we provide an introduction on oxide TFTs and the TFT configurations and operating principles. Secondly, we present the recent progress in solution-processed n-type transistors, with a special focus on low-temperature and large-area solution processed approaches as well as novel non-display applications. Thirdly, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-voltage electronics. Fourthly, we discuss the recent progress in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw the conclusions and outline the perspectives over the research field.

  18. Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

    Science.gov (United States)

    Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

    2018-06-01

    In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

  19. Effects of n-3 polyunsaturated fatty acids on cardiac ion channels

    Directory of Open Access Journals (Sweden)

    Cristina eMoreno

    2012-07-01

    Full Text Available Dietary n-3 polyunsaturated fatty acids (PUFAs have been reported to exhibit antiarrhythmic properties, attributed to their capability to modulate ion channels. In the present review, we will focus on the effects of PUFAs on cardiac sodium channel (Nav1.5 and two potassium channels (Kv (Kv1.5 and Kv11.1. n-3 marine (docohexaenoic and eicohexapentaenoic acid and plant origin (alpha-linolenic acid PUFAs block Kv1.5 and Kv11.1 channels at physiological concentrations. Also, DHA and EPA decreased Nav1.5 and calcium channels. These effects on Na and Ca channels theoretically should shorten the cardiac APD, whereas the blocking actions of n-3 PUFAs of Kv channels should lengthen the cardiac action potential. Experiments performed in female rabbits fed with a diet rich in n-3 PUFAs show a longer cardiac action potential and effective refractory period. This study was performed to analyze if their antiarrhythmic effects are due to a reduction of triangulation, reverse use-dependence, instability and dispersion of the cardiac action potential (TRIaD as a measure of proarrhythmic effects. Dietary n-3 PUFAs supplementation markedly reduced dofetilide-induced TRIaD and abolished dofetilide-induced torsades de pointes (TdP. Ultrafast sodium channel block by DHA may account for the antiarrhythmic protection of dietary supplements of n-3 PUFAs against dofetilide induced proarrhythmia observed in this animal model. The cardiac effects of n-3 PUFAs resemble those of amiodarone: both block sodium, calcium and potassium channels, have anti-adrenergic properties, can prolong the cardiac action potential, reverse TRIaD and suppress TdP. The main difference is that sodium channel block by n-3 PUFAs has a much faster onset and offset kinetics. Therefore, the electrophysiological profile of n-3 PUFAs appears more desirable: the duration of reduced sodium current (facilitates re-entry is much shorter. The n-3 PUFAs appear as a safer alternative to other antiarrhythmic

  20. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  1. Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

    2017-04-15

    Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

  2. Transparent megahertz circuits from solution-processed composite thin films.

    Science.gov (United States)

    Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

    2016-04-21

    Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

  3. Towards high performance processing in modern Java-based control systems

    International Nuclear Information System (INIS)

    Misiowiec, M.; Buczak, W.; Buttner, M.

    2012-01-01

    CERN controls software is often developed on Java foundation. Some systems carry out a combination of data, network and processor intensive tasks within strict time limits. Hence, there is a demand for high performing, quasi real time solutions. The system must handle dozens of thousands of data samples every second, along its three tiers, applying complex computations throughout. To accomplish the goal, a deep understanding of multi-threading, memory management and inter process communication was required. There are unexpected traps hidden behind an excessive use of 64 bit memory or severe impact on the processing flow of modern garbage collectors. Tuning JVM configuration significantly affects the execution of the code. Even more important is the amount of threads and the data structures used between them. Accurately dividing work into independent tasks might boost system performance. Thorough profiling with dedicated tools helped understand the bottlenecks and choose algorithmically optimal solutions. Different virtual machines were tested, in a variety of setups and garbage collection options. The overall work provided for discovering actual hard limits of the whole setup. We present this process of designing a challenging system in view of the characteristics and limitations of the contemporary Java run-time environment. (authors)

  4. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  5. Solution NMR structure of the V27A drug resistant mutant of influenza A M2 channel

    Energy Technology Data Exchange (ETDEWEB)

    Pielak, Rafal M. [Department of Biological Chemistry and Molecular Pharmacology, Harvard Medical School, Boston, MA 02115 (United States); Program in Biological and Biomedical Sciences, Harvard Medical School, Boston, MA 02115 (United States); Chou, James J., E-mail: chou@cmcd.hms.harvard.edu [Department of Biological Chemistry and Molecular Pharmacology, Harvard Medical School, Boston, MA 02115 (United States)

    2010-10-08

    Research highlights: {yields} This paper reports the structure of the V27A drug resistant mutant of the M2 channel of influenza A virus. {yields} High quality NMR data allowed a better-defined structure for the C-terminal region of the M2 channel. {yields} Using the structure, we propose a proton transfer pathway during M2 proton conduction. {yields} Structural comparison between the wildtype, V27A and S31N variants allowed an in-depth analysis of possible modes of drug resistance. {yields} Distinct feature of the V27A channel pore also provides an explanation for its faster rate of proton conduction. -- Abstract: The M2 protein of influenza A virus forms a proton-selective channel that is required for viral replication. It is the target of the anti-influenza drugs, amantadine and rimantadine. Widespread drug resistant mutants, however, has greatly compromised the effectiveness of these drugs. Here, we report the solution NMR structure of the highly pathogenic, drug resistant mutant V27A. The structure reveals subtle structural differences from wildtype that maybe linked to drug resistance. The V27A mutation significantly decreases hydrophobic packing between the N-terminal ends of the transmembrane helices, which explains the looser, more dynamic tetrameric assembly. The weakened channel assembly can resist drug binding either by destabilizing the rimantadine-binding pocket at Asp44, in the case of the allosteric inhibition model, or by reducing hydrophobic contacts with amantadine in the pore, in the case of the pore-blocking model. Moreover, the V27A structure shows a substantially increased channel opening at the N-terminal end, which may explain the faster proton conduction observed for this mutant. Furthermore, due to the high quality NMR data recorded for the V27A mutant, we were able to determine the structured region connecting the channel domain to the C-terminal amphipathic helices that was not determined in the wildtype structure. The new structural

  6. Preparation and investigation of nano-AlN lubricant with high performance

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Yu; Tao, Yuxiao; Wang, Biaobing [School of Materials Science and Engineering, Changzhou University, Changzhou 201326 (China); Tai, Yanlong, E-mail: ytai@ucdavis.edu [Department of Biomedical Engineering, University of California Davis, Davis, CA 95616 (United States)

    2014-09-15

    A new kind of macromolecular coupling agent (LMW-a-PP-g-MAH) of maleic anhydride (MAH) onto low-molecular-weight atactic polypropylene (LMW-a-PP) was synthesized according to molecular design and was used as modifier for surface modification of nano-Aluminum nitride (AlN) by a high-pressure homogenization (HPH) process. IR was conducted to confirm the chemical structure of the step products of LMW-a-PP-g-MAH. The availability as a modifier for surface modification of nano-AlN was distinguished by Fourier transform infrared spectroscopy (FTIR), particle size analysis, transmission electron microscope (TEM), thermogravimetric analysis (TGA), contact angle experiments and the dispersion stability in dimethylbenzene and Greatwall lubrication oil. It can be inferred that the optimal loading is 10 wt. %–12 wt. % of LMW-a-PP-g-MAH to modify nano-AlN particles. Nano-AlN lubricating composite materials (LMW-a-PP-g-MAH-AlN) was used to improve the antifriction performance and the load capability of Greatwall lubrication oil, and maximum non-seizure load (P{sub B}) can increase highly from 1000 N to 1490 N when the loading is 0.3 wt. %. - Highlights: • Design and synthesis of macromolecular coupling agent (a-PP-g-MAH). • Surface modification and characterization of nano-AlN by HPH process. • Preparation and investigation of nano-AlN/lubricating oil with high performance.

  7. Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

    KAUST Repository

    Hellstrom, Sondra L.

    2010-07-12

    We report patterned deposition of carbon nanotube/conjugated polymer composites from solution with high nanotube densities and excellent feature resolution. Such composites are suited for use as electrodes in high-performance transistors of pentacene and C60, with bottom-contact mobilities of ?0.5 and ?1 cm2 V-1 s-1, respectively. This represents a clear step towards development of inexpensive, high-performance all-organic circuits. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. High-performance magnetic carbon materials in dye removal from aqueous solutions

    International Nuclear Information System (INIS)

    Gao, Xiaoming; Zhang, Yu; Dai, Yuan; Fu, Feng

    2016-01-01

    To obtain a novel adsorbent with excellent adsorption capacity and convenient magnetic separation property, magnetic activated semi-coke was prepared by KOH activation method and further modified by FeCl 3 . The surface morphology, physical structure, chemical properties and textural characteristics of unmodified semi-coke, KOH-modified semi-coke and magnetic activated semi-coke were characterized by scanning electron microscopy, X-ray powder diffraction, N 2 adsorption-desorption measurement, and electronic differential system. The adsorption characteristics of the magnetic activated semi-coke were explored for the removal of methyl orang (MO), methylene blue (MB), congo red (CR), acid fuchsin (AF), and rhodamine B (RB) from aqueous solution. The effects of adsorption parameters, including adsorbent dosage, pH and contact time, were investigated by comparing the adsorption properties of the magnetic activated semi-coke to RB. The result showed that the magnetic activated semi-coke displayed excellent dispersion, convenient separation and high adsorption capacity. The adsorption experiment data indicated that the pseudosecond order model and the Langmuir model could well explain the adsorption processes of RB on the magnetic activated semi-coke, and the maximum adsorption capacity (q m ) was 526.32 mg/g. The values of thermodynamic parameters (ΔG°, ΔH° and ΔS°) indicated that the adsorption process depended on the temperature of the aqueous phase, and it was spontaneous and exothermic in nature. As the addition of the magnetic activated semi-coke, the color of the solution significantly faded. Subsequently, fast aggregation of the magnetic activated semi-coke from their homogeneous dispersion in the presence of an external magnetic field could be happened. So, the magnetic activated semi-coke displayed excellent dispersion, convenient separation and high adsorption capacity. - Graphical abstract: As the addition of the magnetic activated semi-coke, the color

  9. Energy loss and charge exchange processes of high energy heavy ions channeled in crystals

    International Nuclear Information System (INIS)

    Poizat, J.C.; Andriamonje, S.; Anne, R.; Faria, N.V.d.C.; Chevallier, M.; Cohen, C.; Dural, J.; Farizon-Mazuy, B.; Gaillard, M.J.; Genre, R.; Hage-Ali, M.; Kirsch, R.; L'hoir, A.; Mory, J.; Moulin, J.; Quere, Y.; Remillieux, J.; Schmaus, D.; Toulemonde, M.

    1990-01-01

    The interaction of moving ions with single crystals is very sensitive to the orientation of the incident beam with respect to the crystalline directions of the target. Our experiments show that high energy heavy ion channeling deeply modifies their slowing down and charge exchange processes. This is due to the fact that channeled ions interact only with outershell target electrons, which means that the electron density they experience is very low and that the binding energy, and then the momentum distribution of these electrons, are quite different from the corresponding average values associated to random incidence. The two experimental studies presented here show the reduction of the energy loss rate for fast channeled heavy ions and illustrate the two aspects of channeling effects on charge exchange, the reduction of electron loss on one hand, and of electron capture on the other hand

  10. A review of channel selection algorithms for EEG signal processing

    Science.gov (United States)

    Alotaiby, Turky; El-Samie, Fathi E. Abd; Alshebeili, Saleh A.; Ahmad, Ishtiaq

    2015-12-01

    Digital processing of electroencephalography (EEG) signals has now been popularly used in a wide variety of applications such as seizure detection/prediction, motor imagery classification, mental task classification, emotion classification, sleep state classification, and drug effects diagnosis. With the large number of EEG channels acquired, it has become apparent that efficient channel selection algorithms are needed with varying importance from one application to another. The main purpose of the channel selection process is threefold: (i) to reduce the computational complexity of any processing task performed on EEG signals by selecting the relevant channels and hence extracting the features of major importance, (ii) to reduce the amount of overfitting that may arise due to the utilization of unnecessary channels, for the purpose of improving the performance, and (iii) to reduce the setup time in some applications. Signal processing tools such as time-domain analysis, power spectral estimation, and wavelet transform have been used for feature extraction and hence for channel selection in most of channel selection algorithms. In addition, different evaluation approaches such as filtering, wrapper, embedded, hybrid, and human-based techniques have been widely used for the evaluation of the selected subset of channels. In this paper, we survey the recent developments in the field of EEG channel selection methods along with their applications and classify these methods according to the evaluation approach.

  11. A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

    International Nuclear Information System (INIS)

    Mao Wei; She Wei-Bo; Zhang Chao; Zhang Jin-Cheng; Zhang Jin-Feng; Liu Hong-Xia; Yang Lin-An; Zhang Kai; Zhao Sheng-Lei; Chen Yong-He; Zheng Xue-Feng; Hao Yue; Yang Cui; Ma Xiao-Hua

    2014-01-01

    In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco—Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Highly eccentric hip-hop solutions of the 2 N-body problem

    Science.gov (United States)

    Barrabés, Esther; Cors, Josep M.; Pinyol, Conxita; Soler, Jaume

    2010-02-01

    We show the existence of families of hip-hop solutions in the equal-mass 2 N-body problem which are close to highly eccentric planar elliptic homographic motions of 2 N bodies plus small perpendicular non-harmonic oscillations. By introducing a parameter ɛ, the homographic motion and the small amplitude oscillations can be uncoupled into a purely Keplerian homographic motion of fixed period and a vertical oscillation described by a Hill type equation. Small changes in the eccentricity induce large variations in the period of the perpendicular oscillation and give rise, via a Bolzano argument, to resonant periodic solutions of the uncoupled system in a rotating frame. For small ɛ≠0, the topological transversality persists and Brouwer’s fixed point theorem shows the existence of this kind of solutions in the full system.

  13. Evaluation channel performance in multichannel environments

    NARCIS (Netherlands)

    Gensler, S.; Dekimpe, M.; Skiera, B.

    2007-01-01

    Evaluating channel performance is crucial for actively managing multiple sales channels, and requires understanding the customers' channel preferences. Two key components of channel performance are (i) the existing customers' intrinsic loyalty to a particular channel and (ii) the channel's ability

  14. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

    Directory of Open Access Journals (Sweden)

    Yingtao Xie

    2018-01-01

    Full Text Available A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD method. The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O23], zinc acetylacetonate hydrate [Zn(C5H7O22·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O23] dissolved in tetrahydrofuran (THF. The deposited films by spin-coating were annealed at moderate process temperature (≤500°C. The relationship between device performance and postannealing temperature was studied. The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased. Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration. In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition. The result demonstrated that the saturated mobilities (μe decreased and VTH shifted to positive voltage as the Ga molar ratio was increased. It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH. As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.

  15. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    KAUST Repository

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  16. Development of a freeze-drying process of waste-solution, 2

    International Nuclear Information System (INIS)

    Kondo, Isao; Kawasaki, Takeshi

    1988-01-01

    The waste solution treatment process in Plutonium Conversion Development Facility (PCDF) consists of Evaporation-Condensation and Neutrazation-Agglometation-Precipitation process, which produces the distillate as recovered acid at first step and separates Pu-U element from condenced solution at second step. This process needs many stages to get high decontamination efficiency and then the Evaporator is in very corrosive state because the nitric acid solution is heated over 100 degrees C to be evaporated. So, in PCDF, it was started the development of Freeze-Drying process to waste solution treatment. This process is suitable for a little quantity of the solution including nitric acid as produced in the Microwave Heating method. Moreover the process has high decontamination efficiency and has good performance of equipment. The result of the cold test of Freeze-Drying process with nitric acid is discribed in this paper. (author)

  17. Storage management solutions and performance tests at the INFN Tier-1

    International Nuclear Information System (INIS)

    Bencivenni, M; Carbone, A; Chierici, A; D'Apice, A; Girolamo, D D; Dell'Agnello, L; Donatelli, M; Fella, A; Forti, A; Ghiselli, A; Italiano, A; Re, G L; Magnoni, L; Martelli, B; Mazzucato, M; Donvito, G; Furano, F; Marconi, U; Galli, D; Lanciotti, E

    2008-01-01

    Performance, reliability and scalability in data access are key issues in the context of HEP data processing and analysis applications. In this paper we present the results of a large scale performance measurement performed at the INFN-CNAF Tier-1, employing some storage solutions presently available for HEP computing, namely CASTOR, GPFS, Scalla/Xrootd and dCache. The storage infrastructure was based on Fibre Channel systems organized in a Storage Area Network, providing 260 TB of total disk space, and 24 disk servers connected to the computing farm (280 worker nodes) via Gigabit LAN. We also describe the deployment of a StoRM SRM instance at CNAF, configured to manage a GPFS file system, presenting and discussing its performances

  18. Improved Mobility Performance in LTE Co-Channel HetNets Through Speed Differentiated Enhancements

    DEFF Research Database (Denmark)

    Barbera, Simone; Michaelsen, Per Henrik; Säily, Mikko

    2012-01-01

    , requiring minimum assistance and signaling from the network. Extensive system level simulations are used to quantify the benefits. Results confirm that the proposed solutions offer improvements in several mobility key performance indicators such as radio link failure, number of handovers, offload to pico......This paper analyzes the mobility performance of LTE (Long Term Evolution) co-channel heterogeneous networks (HetNet) with macro and pico cells. Improved methods for differentiating offload and mobility robustness as a function of the UE (User Equipment) mobility are proposed. The suggested solution...... comprises two key elements, namely enhanced UE MSE (Mobility State Estimation), as well as optimized methods such that high speed users are primarily kept at the macro layer, while the offload to pico cells for low speed users is maximized. The proposed methods are designed as UE autonomous solutions...

  19. Solution-processable MoOx nanocrystals enable highly efficient reflective and semitransparent polymer solar cells

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2016-09-09

    Solution-manufacturing of organic solar cells with best-in-class power conversion efficiency (PCE) will require all layers to be solution-coated without compromising solar cell performance. To date, the hole transporting layer (HTL) deposited on top of the organic bulk heterojunction layer in the inverted architecture is most commonly an ultrathin (<10 nm) metal oxide layer prepared by vacuum-deposition. Here, we show that an alcohol-based nanocrystalline MoOx suspension with carefully controlled nanocrystal (NC) size can yield state of the art reflective and semitransparent solar cells. Using NCs smaller than the target HTL thickness (∼10 nm) can yield compact, pinhole-free films which result in highly efficient polymer:fullerene bulk heterojunction (BHJ) solar cells with PCE=9.5%. The solution processed HTL is shown to achieve performance parity with vacuum-evaporated HTLs for several polymer:fullerene combinations and is even shown to work as hole injection layer in polymer light emitting diodes (PLED). We also demonstrate that larger MoOx NCs (30–50 nm) successfully composite MoOx with Ag nanowires (NW) to form a highly conducting, transparent top anode with exceptional contact properties. This yields state-of-the-art semitransparent polymer: fullerene solar cells with PCE of 6.5% and overall transmission >30%. The remarkable performance of reflective and semitransparent OPVs is due to the uncommonly high fill factors achieved using a carefully designed strategy for implementation of MoOx nanocrystals as HTL materials. © 2016 Elsevier Ltd

  20. Characterizing SPDY over High Latency Satellite Channels

    Directory of Open Access Journals (Sweden)

    Luca Caviglione

    2014-12-01

    Full Text Available The increasing complexity ofWeb contents and the growing diffusion of mobile terminals, which use wireless and satellite links to get access to the Internet, impose the adoption of more specialized protocols. In particular, we focus on SPDY, a novel protocol introduced by Google to optimize the retrieval of complex webpages, to manage large Round Trip Times and high packet losses channels. In this perspective, the paper characterizes SPDY over high latency satellite links, especially with the goal of understanding whether it could be an efficient solution to cope with performance degradations typically affecting Web 2.0 services. To this aim, we implemented an experimental set-up, composed of an ad-hoc proxy, a wireless link emulator, and an instrumented Web browser. The results clearly indicate that SPDY can enhance the performances in terms of loading times, and reduce the traffic fragmentation. Moreover, owing to its connection multiplexing architecture, SPDY can also mitigate the transport layer complexity, which is critical when in presence of Performance Enhancing Proxies usually deployed to isolate satellite trunks.

  1. High-performance solution-processed polymer ferroelectric field-effect transistors

    NARCIS (Netherlands)

    Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

    We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

  2. High-performance semiconductors based on oligocarbazole–thiophene derivatives for solution-fabricated organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Gung-Pei; Hsieh, Kuo-Huang, E-mail: khhsieh@ntu.edu.tw

    2013-01-01

    A series of oligocarbazole–thiophenes based on a constant conjugate backbone (carbazole–bithiophene–carbazole) with various n-alkyl chain lengths was prepared for application to organic field-effect transistors (OFETs). The lengths of the n-alkyl substitutions attached on 9-position of carbazole moieties were methyl (CCzT2), hexyl (C6CzT2), dodecyl (C12CzT2), and octadecyl (C18CzT2), called CxCzT2. Variations of n-alkyl chain lengths are proposed to figure out the optimization of OFET performance via solution fabrication of the active layer. Before fabricating OFET devices, the thermal, optical, and electrochemical properties of CxCzT2 were fully characterized with thermogravimetric analysis, differential scanning calorimetry, ultraviolet–visible spectroscopy, and cyclic voltammetry to realize the relationships of the structure to the properties. After fabricating CxCzT2 on Si/SiO{sub 2} substrates via solution casting, the thin film morphologies were also studied with polarizing optical microscopy, atomic force microscopy, and X-ray diffraction to investigate the structural relationship to OFET performance. A higher hole mobility was observed with C12CzT2 (3.6 × 10{sup −2} cm{sup 2} V{sup −1} s{sup −1}) due to its liquid crystal properties, and the hole mobility could be further improved to 1.2 × 10{sup −1} cm{sup 2} V{sup −1} s{sup −1} by the introduction of a phenyl-self-assembled monolayer on the Si/SiO{sub 2} substrates. The excellent OFET performances of C12CzT2 by solution–fabrication could be considered as a promising candidate for high-end OFET application. - Highlights: ► These oligomeric semiconductors were synthesized rapidly. ► The thermal, optical, and electrochemical properties were fully investigated. ► The liquid crystal properties can be obtained via alkyl chain length adjustment. ► These oligomeric semiconductors can be solution-fabricated. ► One of these oligomeric semiconductors yields high field-effect hole

  3. Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation

    International Nuclear Information System (INIS)

    Liu Yuwei; Wang Hong; Radhakrishnan, K.

    2007-01-01

    The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structure has been studied. Different from the structures with single InGaAs channel, an increase in effective mobility μ e with a negligible change of sheet carrier density n s after SiN deposition is clearly observed in the composite channel structures. The enhancement of μ e could be explained under the framework of electrons transferring from the InP sub-channel into InGaAs channel region due to the energy band bending at the surface region caused by SiN passivation, which is further confirmed by low temperature photoluminescence measurements

  4. The performance analysis of direct methanol fuel cells with different hydrophobic anode channels

    Science.gov (United States)

    Yeh, Hung-Chun; Yang, Ruey-Jen; Luo, Win-Jet; Jiang, Jia-You; Kuan, Yean-Der; Lin, Xin-Quan

    In order to enhance the performance of the direct methanol fuel cell (DMFC), the product of CO 2 bubble has to be efficiently removed from the anode channel during the electrochemical reaction. In this study, the materials of Polymethyl Methacrylate (PMMA) with hydrophilic property and polydimethylsiloxane (PDMS) with hydrophobic property are used to form the anode cannel. The channel is fabricated through a microelectromechanical system (MEMS) manufacture process of the DMFCs. In addition, some particles with high hydrophobic properties are added into the PDMS materials in order to further reduce the hydro-resistance in the anode channel. The performance of the DMFCs is investigated under the influence of operation conditions, including operation temperature, flow rate, and methanol concentration. It is found that the performance of the DMFC, which is made of PDMS with high hydrophobic particles, can be greatly enhanced and the hydrophobic property of the particles can be unaffected by different operation conditions.

  5. High performance germanium MOSFETs

    International Nuclear Information System (INIS)

    Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas; Kim, Donghyun; Nayfeh, Ammar; Pethe, Abhijit

    2006-01-01

    Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO x N y ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin (∼2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices

  6. High performance germanium MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Saraswat, Krishna [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)]. E-mail: saraswat@stanford.edu; Chui, Chi On [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Krishnamohan, Tejas [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Kim, Donghyun [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Nayfeh, Ammar [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Pethe, Abhijit [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2006-12-15

    Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO {sub x}N {sub y} ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin ({approx}2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices.

  7. High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

    Science.gov (United States)

    Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

    2017-09-01

    As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

  8. High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

    Science.gov (United States)

    Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

    2017-09-01

    As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

  9. Low-temperature solution processing of palladium/palladium oxide films and their pH sensing performance.

    Science.gov (United States)

    Qin, Yiheng; Alam, Arif U; Pan, Si; Howlader, Matiar M R; Ghosh, Raja; Selvaganapathy, P Ravi; Wu, Yiliang; Deen, M Jamal

    2016-01-01

    Highly sensitive, easy-to-fabricate, and low-cost pH sensors with small dimensions are required to monitor human bodily fluids, drinking water quality and chemical/biological processes. In this study, a low-temperature, solution-based process is developed to prepare palladium/palladium oxide (Pd/PdO) thin films for pH sensing. A precursor solution for Pd is spin coated onto pre-cleaned glass substrates and annealed at low temperature to generate Pd and PdO. The percentages of PdO at the surface and in the bulk of the electrodes are correlated to their sensing performance, which was studied by using the X-ray photoelectron spectroscope. Large amounts of PdO introduced by prolonged annealing improve the electrode's sensitivity and long-term stability. Atomic force microscopy study showed that the low-temperature annealing results in a smooth electrode surface, which contributes to a fast response. Nano-voids at the electrode surfaces were observed by scanning electron microscope, indicating a reason for the long-term degradation of the pH sensitivity. Using the optimized annealing parameters of 200°C for 48 h, a linear pH response with sensitivity of 64.71±0.56 mV/pH is obtained for pH between 2 and 12. These electrodes show a response time shorter than 18 s, hysteresis less than 8 mV and stability over 60 days. High reproducibility in the sensing performance is achieved. This low-temperature solution-processed sensing electrode shows the potential for the development of pH sensing systems on flexible substrates over a large area at low cost without using vacuum equipment. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2015-01-01

    Full Text Available A novel enhancement-mode (E-mode Metal-Insulator-Semiconductor- (MIS- HEMT with selective fluorine ion (F− treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT. First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV. Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID. Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT, SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat by 28%.

  11. Planck 2013 results. VI. High Frequency Instrument data processing

    DEFF Research Database (Denmark)

    Ade, P. A. R.; Aghanim, N.; Armitage-Caplan, C.

    2013-01-01

    We describe the processing of the 531 billion raw data samples from the High Frequency Instrument (HFI), which we performed to produce six temperature maps from the first 473 days of Planck-HFI survey data. These maps provide an accurate rendition of the sky emission at 100, 143,217, 353, 545......, these two high frequency channels are calibrated to within 5% and the 353 GHz channel to the percent level. The 100 and217 GHz channels, which together with the 143 GHz channel determine the high-multipole part of the CMB power spectrum (50

  12. Teleportation of n-Particle State via n Pairs of EPR Channels

    Institute of Scientific and Technical Information of China (English)

    CAO Min; ZHU Shi-Qun; FANG Jian-Xing

    2004-01-01

    The teleportation of an arbitrary n-particle state (n ≥ 1) is proposed if n pairs of identical EPR states are utilized as quantum channels. Independent Bell state measurements are performed for joint measurement. By using a special Latin square of order 2n(n ≥ 1), explicit expressions of outcomes after the Bell state measurements by Alice (sender) and the corresponding unitary transformations by Bob (receiver) can be derived. It is shown that the teleportation of n-particle state can be implemented by a series of single-qubit teleportation.

  13. Channel modeling, signal processing and coding for perpendicular magnetic recording

    Science.gov (United States)

    Wu, Zheng

    With the increasing areal density in magnetic recording systems, perpendicular recording has replaced longitudinal recording to overcome the superparamagnetic limit. Studies on perpendicular recording channels including aspects of channel modeling, signal processing and coding techniques are presented in this dissertation. To optimize a high density perpendicular magnetic recording system, one needs to know the tradeoffs between various components of the system including the read/write transducers, the magnetic medium, and the read channel. We extend the work by Chaichanavong on the parameter optimization for systems via design curves. Different signal processing and coding techniques are studied. Information-theoretic tools are utilized to determine the acceptable region for the channel parameters when optimal detection and linear coding techniques are used. Our results show that a considerable gain can be achieved by the optimal detection and coding techniques. The read-write process in perpendicular magnetic recording channels includes a number of nonlinear effects. Nonlinear transition shift (NLTS) is one of them. The signal distortion induced by NLTS can be reduced by write precompensation during data recording. We numerically evaluate the effect of NLTS on the read-back signal and examine the effectiveness of several write precompensation schemes in combating NLTS in a channel characterized by both transition jitter noise and additive white Gaussian electronics noise. We also present an analytical method to estimate the bit-error-rate and use it to help determine the optimal write precompensation values in multi-level precompensation schemes. We propose a mean-adjusted pattern-dependent noise predictive (PDNP) detection algorithm for use on the channel with NLTS. We show that this detector can offer significant improvements in bit-error-rate (BER) compared to conventional Viterbi and PDNP detectors. Moreover, the system performance can be further improved by

  14. Performance Analysis and Optimal Allocation of Layered Defense M/M/N Queueing Systems

    Directory of Open Access Journals (Sweden)

    Longyue Li

    2016-01-01

    Full Text Available One important mission of strategic defense is to develop an integrated layered Ballistic Missile Defense System (BMDS. Motivated by the queueing theory, we presented a work for the representation, modeling, performance simulation, and channels optimal allocation of the layered BMDS M/M/N queueing systems. Firstly, in order to simulate the process of defense and to study the Defense Effectiveness (DE, we modeled and simulated the M/M/N queueing system of layered BMDS. Specifically, we proposed the M/M/N/N and M/M/N/C queueing model for short defense depth and long defense depth, respectively; single target channel and multiple target channels were distinguished in each model. Secondly, we considered the problem of assigning limited target channels to incoming targets, we illustrated how to allocate channels for achieving the best DE, and we also proposed a novel and robust search algorithm for obtaining the minimum channel requirements across a set of neighborhoods. Simultaneously, we presented examples of optimal allocation problems under different constraints. Thirdly, several simulation examples verified the effectiveness of the proposed queueing models. This work may help to understand the rules of queueing process and to provide optimal configuration suggestions for defense decision-making.

  15. (Invited) Wavy Channel TFT Architecture for High Performance Oxide Based Displays

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Hussain, Aftab M.; Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Sevilla, Galo T.; Hussain, Muhammad Mustafa

    2015-01-01

    We show the effectiveness of wavy channel architecture for thin film transistor application for increased output current. This specific architecture allows increased width of the device by adopting a corrugated shape of the substrate without any further real estate penalty. The performance improvement is attributed not only to the increased transistor width, but also to enhanced applied electric field in the channel due to the wavy architecture.

  16. (Invited) Wavy Channel TFT Architecture for High Performance Oxide Based Displays

    KAUST Repository

    Hanna, Amir

    2015-05-22

    We show the effectiveness of wavy channel architecture for thin film transistor application for increased output current. This specific architecture allows increased width of the device by adopting a corrugated shape of the substrate without any further real estate penalty. The performance improvement is attributed not only to the increased transistor width, but also to enhanced applied electric field in the channel due to the wavy architecture.

  17. A III-V nanowire channel on silicon for high-performance vertical transistors.

    Science.gov (United States)

    Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

    2012-08-09

    Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

  18. Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Lee, Seungwoon; Jeong, Jaewook

    2017-08-01

    In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

  19. Numerical evaluation of various gas and coolant channel designs for high performance liquid-cooled proton exchange membrane fuel cell stacks

    International Nuclear Information System (INIS)

    Sasmito, Agus P.; Kurnia, Jundika C.; Mujumdar, Arun S.

    2012-01-01

    A careful design of gas and coolant channel is essential to ensure high performance and durability of proton exchange membrane (PEM) fuel cell stack. The channel design should allow for good thermal, water and gas management whilst keeping low pressure drop. This study evaluates numerically the performance of various gas and coolant channel designs simultaneously, e.g. parallel, serpentine, oblique-fins, coiled, parallel-serpentine and a novel hybrid parallel-serpentine-oblique-fins designs. The stack performance and local distributions of key parameters are investigated with regards to the thermal, water and gas management. The results indicate that the novel hybrid channel design yields the best performance as it constitutes to a lower pumping power and good thermal, water and gas management as compared to conventional channels. Advantages and limitation of the designs are discussed in the light of present numerical results. Finally, potential application and further improvement of the design are highlighted. -- Highlights: ► We evaluate various gas and coolant channel designs in liquid-cooled PEM fuel cell stack. ► The model considers coupled electrochemistry, channel design and cooling effect simultaneously. ► We propose a novel hybrid channel design. ► The novel hybrid channel design yields the best thermal, water and gas management which is beneficial for long term durability. ► The novel hybrid channel design exhibits the best performance.

  20. Mechanism of HERG potassium channel inhibition by tetra-n-octylammonium bromide and benzethonium chloride

    International Nuclear Information System (INIS)

    Long, Yan; Lin, Zuoxian; Xia, Menghang; Zheng, Wei; Li, Zhiyuan

    2013-01-01

    Tetra-n-octylammonium bromide and benzethonium chloride are synthetic quaternary ammonium salts that are widely used in hospitals and industries for the disinfection and surface treatment and as the preservative agent. Recently, the activities of HERG channel inhibition by these compounds have been found to have potential risks to induce the long QT syndrome and cardiac arrhythmia, although the mechanism of action is still elusive. This study was conducted to investigate the mechanism of HERG channel inhibition by these compounds by using whole-cell patch clamp experiments in a CHO cell line stably expressing HERG channels. Tetra-n-octylammonium bromide and benzethonium chloride exhibited concentration-dependent inhibitions of HERG channel currents with IC 50 values of 4 nM and 17 nM, respectively, which were also voltage-dependent and use-dependent. Both compounds shifted the channel activation I–V curves in a hyperpolarized direction for 10–15 mV and accelerated channel activation and inactivation processes by 2-fold. In addition, tetra-n-octylammonium bromide shifted the inactivation I–V curve in a hyperpolarized direction for 24.4 mV and slowed the rate of channel deactivation by 2-fold, whereas benzethonium chloride did not. The results indicate that tetra-n-octylammonium bromide and benzethonium chloride are open-channel blockers that inhibit HERG channels in the voltage-dependent, use-dependent and state-dependent manners. - Highlights: ► Tetra-n-octylammonium and benzethonium are potent HERG channel inhibitors. ► Channel activation and inactivation processes are accelerated by the two compounds. ► Both compounds are the open-channel blockers to HERG channels. ► HERG channel inhibition by both compounds is use-, voltage- and state dependent. ► The in vivo risk of QT prolongation needs to be studied for the two compounds

  1. Mechanism of HERG potassium channel inhibition by tetra-n-octylammonium bromide and benzethonium chloride

    Energy Technology Data Exchange (ETDEWEB)

    Long, Yan; Lin, Zuoxian [Key Laboratory of Regenerative Biology, Guangzhou Institute of Biomedicine and Health, Chinese Academy of Sciences, Guangzhou 510530 (China); Xia, Menghang; Zheng, Wei [National Center for Advancing Translational Sciences, National Institutes of Health, Bethesda, MD 20892 (United States); Li, Zhiyuan, E-mail: li_zhiyuan@gibh.ac.cn [Key Laboratory of Regenerative Biology, Guangzhou Institute of Biomedicine and Health, Chinese Academy of Sciences, Guangzhou 510530 (China)

    2013-03-01

    Tetra-n-octylammonium bromide and benzethonium chloride are synthetic quaternary ammonium salts that are widely used in hospitals and industries for the disinfection and surface treatment and as the preservative agent. Recently, the activities of HERG channel inhibition by these compounds have been found to have potential risks to induce the long QT syndrome and cardiac arrhythmia, although the mechanism of action is still elusive. This study was conducted to investigate the mechanism of HERG channel inhibition by these compounds by using whole-cell patch clamp experiments in a CHO cell line stably expressing HERG channels. Tetra-n-octylammonium bromide and benzethonium chloride exhibited concentration-dependent inhibitions of HERG channel currents with IC{sub 50} values of 4 nM and 17 nM, respectively, which were also voltage-dependent and use-dependent. Both compounds shifted the channel activation I–V curves in a hyperpolarized direction for 10–15 mV and accelerated channel activation and inactivation processes by 2-fold. In addition, tetra-n-octylammonium bromide shifted the inactivation I–V curve in a hyperpolarized direction for 24.4 mV and slowed the rate of channel deactivation by 2-fold, whereas benzethonium chloride did not. The results indicate that tetra-n-octylammonium bromide and benzethonium chloride are open-channel blockers that inhibit HERG channels in the voltage-dependent, use-dependent and state-dependent manners. - Highlights: ► Tetra-n-octylammonium and benzethonium are potent HERG channel inhibitors. ► Channel activation and inactivation processes are accelerated by the two compounds. ► Both compounds are the open-channel blockers to HERG channels. ► HERG channel inhibition by both compounds is use-, voltage- and state dependent. ► The in vivo risk of QT prolongation needs to be studied for the two compounds.

  2. High Performance of PEDOT:PSS/n-Si Solar Cells Based on Textured Surface with AgNWs Electrodes

    Science.gov (United States)

    Jiang, Xiangyu; Zhang, Pengbo; Zhang, Juan; Wang, Jilei; Li, Gaofei; Fang, Xiaohong; Yang, Liyou; Chen, Xiaoyuan

    2018-02-01

    Hybrid heterojunction solar cells (HHSCs) have gained extensive research and attention due to simple device structure and low-cost technological processes. Here, HHSCs are presented based on a highly transparent conductive polymer poly(3,4ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) directly spin-coated on an n-type crystalline silicon with microscale surface textures, which are prepared by traditional chemical etching. We have studied interface properties between PEDOT:PSS and textured n-Si by varying coating conditions. Final power conversion efficiency (PCE) could arrive at 8.54% by these simple solution-based fabrication processes. The high conversion efficiency is attributed to the fully conformal contact between PEDOT:PSS film and textured silicon. Furthermore, the reflectance of the PEDOT:PSS layer on textured surface is analyzed by changing film thickness. In order to improve the performance of the device, silver nanowires were employed as electrodes because of its better optical transmittance and electrical conductivity. The highest PCE of 11.07% was achieved which displayed a 29.6% enhancement compared with traditional silver electrodes. These findings imply that the combination of PEDOT:PSS film and silver nanowire transparent electrodes pave a promising way for realizing high-efficiency and low-cost solar cells.

  3. Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

    Science.gov (United States)

    Freeman, Jon C.

    2004-01-01

    A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

  4. Partially Observable Markov Decision Process-Based Transmission Policy over Ka-Band Channels for Space Information Networks

    Directory of Open Access Journals (Sweden)

    Jian Jiao

    2017-09-01

    Full Text Available The Ka-band and higher Q/V band channels can provide an appealing capacity for the future deep-space communications and Space Information Networks (SIN, which are viewed as a primary solution to satisfy the increasing demands for high data rate services. However, Ka-band channel is much more sensitive to the weather conditions than the conventional communication channels. Moreover, due to the huge distance and long propagation delay in SINs, the transmitter can only obtain delayed Channel State Information (CSI from feedback. In this paper, the noise temperature of time-varying rain attenuation at Ka-band channels is modeled to a two-state Gilbert–Elliot channel, to capture the channel capacity that randomly ranging from good to bad state. An optimal transmission scheme based on Partially Observable Markov Decision Processes (POMDP is proposed, and the key thresholds for selecting the optimal transmission method in the SIN communications are derived. Simulation results show that our proposed scheme can effectively improve the throughput.

  5. Growing three-dimensional biomorphic graphene powders using naturally abundant diatomite templates towards high solution processability

    Science.gov (United States)

    Chen, Ke; Li, Cong; Shi, Liurong; Gao, Teng; Song, Xiuju; Bachmatiuk, Alicja; Zou, Zhiyu; Deng, Bing; Ji, Qingqing; Ma, Donglin; Peng, Hailin; Du, Zuliang; Rümmeli, Mark Hermann; Zhang, Yanfeng; Liu, Zhongfan

    2016-11-01

    Mass production of high-quality graphene with low cost is the footstone for its widespread practical applications. We present herein a self-limited growth approach for producing graphene powders by a small-methane-flow chemical vapour deposition process on naturally abundant and industrially widely used diatomite (biosilica) substrates. Distinct from the chemically exfoliated graphene, thus-produced biomorphic graphene is highly crystallized with atomic layer-thickness controllability, structural designability and less noncarbon impurities. In particular, the individual graphene microarchitectures preserve a three-dimensional naturally curved surface morphology of original diatom frustules, effectively overcoming the interlayer stacking and hence giving excellent dispersion performance in fabricating solution-processible electrodes. The graphene films derived from as-made graphene powders, compatible with either rod-coating, or inkjet and roll-to-roll printing techniques, exhibit much higher electrical conductivity (~110,700 S m-1 at 80% transmittance) than previously reported solution-based counterparts. This work thus puts forward a practical route for low-cost mass production of various powdery two-dimensional materials.

  6. Acoustic MIMO communications in a very shallow water channel

    Science.gov (United States)

    Zhou, Yuehai; Cao, Xiuling; Tong, Feng

    2015-12-01

    Underwater acoustic channels pose significant difficulty for the development of high speed communication due to highly limited band-width as well as hostile multipath interference. Enlightened by rapid progress of multiple input multiple output (MIMO) technologies in wireless communication scenarios, MIMO systems offer a potential solution by enabling multiple spatially parallel communication channels to improve communication performance as well as capacity. For MIMO acoustic communications, deep sea channels offer substantial spatial diversity among multiple channels that can be exploited to address simultaneous multipath and co-channel interference. At the same time, there are increasing requirements for high speed underwater communication in very shallow water area (for example, a depth less than 10 m). In this paper, a space-time multichannel adaptive receiver consisting of multiple decision feedback equalizers (DFE) is adopted as the receiver for a very shallow water MIMO acoustic communication system. The performance of multichannel DFE receivers with relatively small number of receiving elements are analyzed and compared with that of the multichannel time reversal receiver to evaluate the impact of limited spatial diversity on multi-channel equalization and time reversal processing. The results of sea trials in a very shallow water channel are presented to demonstrate the feasibility of very shallow water MIMO acoustic communication.

  7. Measurement of isotopic composition of lanthanides in reprocessing process solutions by high-performance liquid chromatography with inductively coupled plasma mass spectrometry (HPLC/ICP-MS)

    International Nuclear Information System (INIS)

    Okano, Masanori; Jitsukata, Shu; Kuno, Takehiko; Yamada, Keiji

    2011-01-01

    Isotopic compositions of fission products in process solutions and wastes in a reprocessing plant are valuable to proceed safety study of the solutions and research/development concerning treatment/disposal of the wastes. The amount of neodymium-148 is a reliable indication to evaluate irradiation history. The isotopic compositions of samarium and gadolinium in high radioactive wastes are referred to as essential data to evaluate environmental impact in geological repositories. However, pretreatment of analysis must be done with complicated chemical separation such as solvent extraction and ion exchange. The actual measurement data of isotopic compositions of lanthanides comparable to the one of actinides in spent fuel reprocessing process has not been obtained enough. Rapid and high sensitive analytical technique based on high-performance liquid chromatography (HPLC) with an inductively coupled plasma mass spectrometry (ICP-MS) has been developed for the measurement of isotopic compositions of lanthanides in spent fuel reprocessing solutions. HPLC/ICP-MS measurement system was customized for a glove-box to be applied to the radioactive solutions. The cation exchange chromatographic columns (Shim-pack IC-C1) and injection valve (20μL) were located inside of the glove-box except the chromatographic pump. The elements of lanthanide group were separated by a gradient program of HPLC with α-hydroxyisobutyric acid. Isotopic compositions of lanthanides in eluate was sequentially analyzed by a quadruple ICP-MS. Optimization of parameter of HPLC and ICP-MS measurement system was examined with standard solutions containing 14 lanthanide elements. The elements of lanthanides were separated by HPLC and detected by ICP-MS within 25 minutes. The detection limits of Nd-146, Sm-147 and Gd-157 were 0.37 μg L -1 , 0.69 μg L -1 and 0.47 μg L -1 , respectively. The analytical precision of the above three isotopes was better than 10% for standard solutions of 100 μg L -1 with

  8. Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

    Science.gov (United States)

    Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

    2018-03-01

    We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

  9. A numerical model for the solution of the Shallow Water equations in composite channels with movable bed

    Science.gov (United States)

    minatti, L.

    2013-12-01

    the last fifteen years, most of them related to the occurrence of high flow rates. The employment of the model allowed to perform a detailed flood hazard assessment where potential risks associated to bedload transport,such as sediments filling of manufacts, excessive erosion or aggradation rates have been evaluated, together with the more 'classical' evaluation of water levels. The whole process also led to the identification of sensitive reaches of the river that require monitoring thus allowing better management practices of the public money allocated for river maintenance. Solution of the Riemann problem for a 10 m wide rectangular XS. The dotted lines represent the numerical solution, while the continuous ones represent the analytical solution

  10. Noise performance in AlGaN/GaN HEMTs under high drain bias

    International Nuclear Information System (INIS)

    Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

    2009-01-01

    The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

  11. Morphology changes upon scaling a high-efficiency, solution-processed solar cell

    KAUST Repository

    Ro, Hyun Wook

    2016-08-02

    Solution processing via roll-to-roll (R2R) coating promises a low cost, low thermal budget, sustainable revolution for the production of solar cells. Poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3′′′-di(2-octyldodecyl)-2,2′;5′,2′′;5′′,2′′′-quaterthiophen-5,5-diyl)], PffBT4T-2OD, has recently been shown to achieve high power conversion efficiency (>10%) paired with multiple acceptors when thick films are spun-coat from hot solutions. We present detailed morphology studies of PffBT4T-2OD based bulk heterojunction films deposited by the volume manufacturing compatible techniques of blade-coating and slot-die coating. Significant aspects of the film morphology, the average crystal domain orientation and the distribution of the characteristic phase separation length scales, are remarkably different when deposited by the scalable techniques vs. spun-coat. Yet, we find that optimized blade-coated devices achieve PCE > 9.5%, nearly the same as spun-coat. These results challenge some widely accepted propositions regarding what is an optimal BHJ morphology and suggest the hypothesis that diversity in the morphology that supports high performance may be a characteristic of manufacturable systems, those that maintain performance when coated thicker than ≈200 nm. In situ measurements reveal the key differences in the solidification routes for spin- and blade-coating leading to the distinct film structures. © 2016 The Royal Society of Chemistry.

  12. Morphology changes upon scaling a high-efficiency, solution-processed solar cell

    KAUST Repository

    Ro, Hyun Wook; Downing, Jonathan M.; Engmann, Sebastian; Herzing, Andrew A.; DeLongchamp, Dean M.; Richter, Lee J.; Mukherjee, Subhrangsu; Ade, Harald; Abdelsamie, Maged; Jagadamma, Lethy Krishnan; Amassian, Aram; Liu, Yuhang; Yan, He

    2016-01-01

    Solution processing via roll-to-roll (R2R) coating promises a low cost, low thermal budget, sustainable revolution for the production of solar cells. Poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3′′′-di(2-octyldodecyl)-2,2′;5′,2′′;5′′,2′′′-quaterthiophen-5,5-diyl)], PffBT4T-2OD, has recently been shown to achieve high power conversion efficiency (>10%) paired with multiple acceptors when thick films are spun-coat from hot solutions. We present detailed morphology studies of PffBT4T-2OD based bulk heterojunction films deposited by the volume manufacturing compatible techniques of blade-coating and slot-die coating. Significant aspects of the film morphology, the average crystal domain orientation and the distribution of the characteristic phase separation length scales, are remarkably different when deposited by the scalable techniques vs. spun-coat. Yet, we find that optimized blade-coated devices achieve PCE > 9.5%, nearly the same as spun-coat. These results challenge some widely accepted propositions regarding what is an optimal BHJ morphology and suggest the hypothesis that diversity in the morphology that supports high performance may be a characteristic of manufacturable systems, those that maintain performance when coated thicker than ≈200 nm. In situ measurements reveal the key differences in the solidification routes for spin- and blade-coating leading to the distinct film structures. © 2016 The Royal Society of Chemistry.

  13. Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

    Science.gov (United States)

    Lee, Ching-Ting; Wang, Chun-Chi

    2018-04-01

    To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

  14. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    International Nuclear Information System (INIS)

    Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

    2016-01-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

  15. Assessing the performance of multi-purpose channel management measures at increasing scales

    Science.gov (United States)

    Wilkinson, Mark; Addy, Steve

    2016-04-01

    In addition to hydroclimatic drivers, sediment deposition from high energy river systems can reduce channel conveyance capacity and lead to significant increases in flood risk. There is an increasing recognition that we need to work with the interplay of natural hydrological and morphological processes in order to attenuate flood flows and manage sediment (both coarse and fine). This typically includes both catchment (e.g. woodland planting, wetlands) and river (e.g. wood placement, floodplain reconnection) restoration approaches. The aim of this work was to assess at which scales channel management measures (notably wood placement and flood embankment removal) are most appropriate for flood and sediment management in high energy upland river systems. We present research findings from two densely instrumented research sites in Scotland which regularly experience flood events and have associated coarse sediment problems. We assessed the performance of a range of novel trial measures for three different scales: wooded flow restrictors and gully tree planting at the small scale (transport to optimise performance. At the large scale, well designed flood embankment lowering can improve connectivity to the floodplain during low to medium return period events. However, ancillary works to stabilise the bank failed thus emphasising the importance of letting natural processes readjust channel morphology and hydrological connections to the floodplain. Although these trial measures demonstrated limited effects, this may be in part owing to restrictions in the range of hydroclimatological conditions during the study period and further work is needed to assess the performance under more extreme conditions. This work will contribute to refining guidance for managing channel coarse sediment problems in the future which in turn could help mitigate flooding using natural approaches.

  16. Chemical Welding on Semimetallic TiS2 Nanosheets for High-Performance Flexible n-Type Thermoelectric Films.

    Science.gov (United States)

    Zhou, Yuan; Wan, Juanyong; Li, Qi; Chen, Lei; Zhou, Jiyang; Wang, Heao; He, Dunren; Li, Xiaorui; Yang, Yaocheng; Huang, Huihui

    2017-12-13

    Solution-based processing of two-dimensional (2D) materials provides the possibility of allowing these materials to be incorporated into large-area thin films, which can translate the interesting fundamental properties of 2D materials into available devices. Here, we report for the first time a novel chemical-welding method to achieve high-performance flexible n-type thermoelectric films using 2D semimetallic TiS 2 nanosheets. We employ chemically exfoliated TiS 2 nanosheets bridged with multivalent cationic metal Al 3+ to cross-link the nearby sheets during the film deposition process. We find that such a treatment can greatly enhance the stability of the film and can improve the power factor by simultaneously increasing the Seebeck coefficient and electrical conductivity. The resulting TiS 2 nanosheet-based flexible film shows a room temperature power factor of ∼216.7 μW m -1 K -2 , which is among the highest chemically exfoliated 2D transition-metal dichalcogenide nanosheet-based films and comparable to the best flexible n-type thermoelectric films, to our knowledge, indicating its potential applications in wearable electronics.

  17. Solution Synthesis and Processing of PZT Materials for Neutron Generator Applications

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, M.A.; Ewsuk, K.G.; Montoya, T.V.; Moore, R.H.; Sipola, D.L.; Tuttle, B.A.; Voigt, J.A.

    1998-12-01

    A new solution synthesis route has been developed for the preparation of lead-based ferroelectric materials (patent filed). The process produces controlled stoichiometry precursor powders by non-aqueous precipitation. For a given ferroelectric material to be prepared, a metal acetate/alkoxide solution containing constituent metal species in the appropriate ratio is mixed with an oxalic acid/n-propanol precipitant solution. An oxalate coprecipitate is instantly fonned upon mixing that quantitatively removes the metals from solution. Most of the process development was focused on the synthesis and processing of niobium-substituted lead zirconate titanate with a Zr-to-Ti ratio of 95:5 (PNZT 95/5) that has an application in neutron generator power supplies. The process was scaled to produce 1.6 kg of the PNZT 95/5 powder using either a sen-ii-batch or a continuous precipitation scheme. Several of the PNZT 95/5 powder lots were processed into ceramic slug form. The slugs in turn were processed into components and characterized. The physical properties and electrical performance (including explosive functional testing of the components met the requirements set for the neutron generator application. Also, it has been demonstrated that the process is highly reproducible with respect to the properties of the powders it produces and the properties of the ceramics prepared from its powders. The work described in this report was funded by Sandia's Laboratory Directed Research and Development Program.

  18. Inverse opal photonic crystal of chalcogenide glass by solution processing.

    Science.gov (United States)

    Kohoutek, Tomas; Orava, Jiri; Sawada, Tsutomu; Fudouzi, Hiroshi

    2011-01-15

    Chalcogenide opal and inverse opal photonic crystals were successfully fabricated by low-cost and low-temperature solution-based process, which is well developed in polymer films processing. Highly ordered silica colloidal crystal films were successfully infilled with nano-colloidal solution of the high refractive index As(30)S(70) chalcogenide glass by using spin-coating method. The silica/As-S opal film was etched in HF acid to dissolve the silica opal template and fabricate the inverse opal As-S photonic crystal. Both, the infilled silica/As-S opal film (Δn ~ 0.84 near λ=770 nm) and the inverse opal As-S photonic structure (Δn ~ 1.26 near λ=660 nm) had significantly enhanced reflectivity values and wider photonic bandgaps in comparison with the silica opal film template (Δn ~ 0.434 near λ=600 nm). The key aspects of opal film preparation by spin-coating of nano-colloidal chalcogenide glass solution are discussed. The solution fabricated "inorganic polymer" opal and the inverse opal structures exceed photonic properties of silica or any organic polymer opal film. The fabricated photonic structures are proposed for designing novel flexible colloidal crystal laser devices, photonic waveguides and chemical sensors. Copyright © 2010 Elsevier Inc. All rights reserved.

  19. Solute coupled diffusion in osmotically driven membrane processes.

    Science.gov (United States)

    Hancock, Nathan T; Cath, Tzahi Y

    2009-09-01

    Forward osmosis (FO) is an emerging water treatment technology with potential applications in desalination and wastewater reclamation. In FO, water is extracted from a feed solution using the high osmotic pressure of a hypertonic solution that flows on the opposite side of a semipermeable membrane; however, solutes diffuse simultaneously through the membrane in both directions and may jeopardize the process. In this study, we have comprehensively explored the effects of different operating conditions on the forward diffusion of solutes commonly found in brackish water and seawater, and reverse diffusion of common draw solution solutes. Results show that reverse transport of solutes through commercially available FO membranes range between 80 mg to nearly 3,000 mg per liter of water produced. Divalent feed solutes have low permeation rates (less than 1 mmol/m2-hr) while monovalent ions and uncharged solutes exhibit higher permeation. Findings have significant implications on the performance and sustainability of the FO process.

  20. Efficient on-chip hotspot removal combined solution of thermoelectric cooler and mini-channel heat sink

    International Nuclear Information System (INIS)

    Hao, Xiaohong; Peng, Bei; Xie, Gongnan; Chen, Yi

    2016-01-01

    Highlights: • A combined solution of thermoelectric cooler (TEC) and mini-channel heat sink to remove the hotspot of the chip has been proposed. • The TEC's mathematical model is established to assess its work performance. • A comparative study on the proposed efficient On-Chip Hotspot Removal Combined Solution. - Abstract: Hotspot will significantly degrade the reliability and performance of the electronic equipment. The efficient removal of hotspot can make the temperature distribution uniform, and ensure the reliable operation of the electronic equipment. This study proposes a combined solution of thermoelectric cooler (TEC) and mini-channel heat sink to remove the hotspot of the chip in the electronic equipment. Firstly, The TEC's mathematical model is established to assess its work performance under different boundary conditions. Then, the hotspot removal capability of the TEC is discussed for different cooling conditions, which has shown that the combined equipment has better hotspot removal capability compared with others. Finally, A TEC is employed to investigate the hotspot removal capacity of the combined solution, and the results have indicated that it can effectively remove hotspot in the diameter of 0.5 mm, the power density of 600W/cm 2 when its working current is 3A and heat transfer thermal resistance is 0 K/W.

  1. 3,3′-Bicarbazole-Based Host Molecules for Solution-Processed Phosphorescent OLEDs

    Directory of Open Access Journals (Sweden)

    Jungwoon Kim

    2018-04-01

    Full Text Available Solution-processed organic light-emitting diodes (OLEDs are attractive due to their low-cost, large area displays, and lighting features. Small molecules as well as polymers can be used as host materials within the solution-processed emitting layer. Herein, we report two 3,3′-bicarbazole-based host small molecules, which possess a structural isomer relationship. 9,9′-Di-4-n-butylphenyl-9H,9′H-3,3′-bicarbazole (BCz-nBuPh and 9,9′-di-4-t-butylphenyl-9H,9′H-3,3′-bicarbazole (BCz-tBuPh exhibited similar optical properties within solutions but different photoluminescence within films. A solution-processed green phosphorescent OLED with the BCz-tBuPh host exhibited a high maximum current efficiency and power efficiency of 43.1 cd/A and 40.0 lm/W, respectively, compared to the device with the BCz-nBuPh host.

  2. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  3. High-energy few-cycle pulse compression through self-channeling in gases

    International Nuclear Information System (INIS)

    Hauri, C.; Merano, M.; Trisorio, A.; Canova, F.; Canova, L.; Lopez-Martens, R.; Ruchon, T.; Engquist, A.; Varju, K.; Gustafsson, E.

    2006-01-01

    Complete test of publication follows. Nonlinear spectral broadening of femtosecond optical pulses by intense propagation in a Kerr medium followed by temporal compression constitutes the Holy Grail for ultrafast science since it allows the generation of intense few-cycle optical transients from longer pulses provided by now commercially available femtosecond lasers. Tremendous progress in high-field and attosecond physics achieved in recent years has triggered the need for efficient pulse compression schemes producing few-cycle pulses beyond the mJ level. We studied a novel pulse compression scheme based on self-channeling in gases, which promises to overcome the energy constraints of hollow-core fiber compression techniques. Fundamentally, self-channeling at high laser powers in gases occurs when the self-focusing effect in the gas is balanced through the dispersion induced by the inhomogeneous refractive index resulting from optically-induced ionization. The high nonlinearity of the ionization process poses great technical challenges when trying to scale this pulse compression scheme to higher energies input energies. Light channels are known to be unstable under small fluctuations of the trapped field that can lead to temporal and spatial beam breakup, usually resulting in the generation of spectrally broad but uncompressible pulses. Here we present experimental results on high-energy pulse compression of self-channeled 40-fs pulses in pressure-gas cells. In the first experiment, performed at the Lund Laser Center in Sweden, we identified a particular self-channeling regime at lower pulse energies (0.8 mJ), in which the ultrashort pulses are generated with negative group delay dispersion (GDD) such that they can be readily compressed down to near 10-fs through simple material dispersion. Pulse compression is efficient (70%) and exhibits exceptional spatial and temporal beam stability. In a second experiment, performed at the LOA-Palaiseau in France, we

  4. Separation of lanthanum from nuclear fuel solutions by high performance liquid chromatography

    International Nuclear Information System (INIS)

    Lazar, G. C.; Petre, M.; Androne, G.; Benga, A.

    2016-01-01

    This paper presents the separation of uranium, praseodymium and lanthanum from nuclear fuel solutions by high performance liquid chromatography (HPLC). The aim of this study is to establish a minimum concentration of lanthanum which can be analyzed by high performance liquid chromatography, and also to study the effect of uranium concentration on the separation of praseodymium and lanthanum. Optimum gradient mode was established for mixture standard stoc solutions with uranium in a concentration of 1 mg/ml, praseodymium and lanthanum in a concentration range of 1-5 μg/ml from each element. These conditions were applied for the separation of lanthanum from a nuclear fuel solution in which praseodymium and lanthanum were added in a concentration of 3 μg/ml from each element. The elution behavior of lanthanum as a function of the pH and the concentration of the mobile phase, using a mixture of 1-octanesulfonic acid sodium salt with a-hidroxyisobutiric acid is presented. (authors)

  5. Solution processed ternary blend nano-composite charge regulation layer to enhance inverted OLED performances

    Science.gov (United States)

    Kaçar, Rifat; Mucur, Selin Pıravadılı; Yıldız, Fikret; Dabak, Salih; Tekin, Emine

    2018-04-01

    Inverted bottom-emission organic light emitting diodes (IBOLEDs) have attracted increasing attention due to their exceptional air stability and applications in active-matrix displays. For gaining high IBOLED device efficiencies, it is crucial to develop an effective strategy to make the bottom electrode easy for charge injection and transport. Charge selectivity, blocking the carrier flow towards the unfavourable side, plays an important role in determining charge carrier balance and accordingly radiative recombination efficiency. It is therefore highly desirable to functionalize an interfacial layer which will perform many different tasks simultaneously. Here, we contribute to the hole-blocking ability of the zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite (NC) interlayer with the intention of increasing the OLED device efficiency. With this purpose in mind, a small amount of 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi) was added as a hole-blocking molecule into the binary blend of ZnO and PEI solution. The device with a ternary ZnO:PEI:TPBi NC interlayer achieved a maximum current efficiency of 38.20 cd A-1 and a power efficiency of 34.29 lm W-1 with a luminance of 123 200 cd m-2, which are high performance parameters for inverted device architecture. The direct comparisons of device performances incorporating ZnO only, ZnO/PEI bilayers, and ZnO:PEI binary NC counterparts were also performed, which shed light on the origin of device performance enhancement.

  6. Performance analysis of subcarrier intensity modulation using rectangular QAM over Malaga turbulence channels with integer and non-integerβ

    KAUST Repository

    Alheadary, Wael G.

    2016-10-13

    In this paper, we derive the performances of optical wireless communication system utilizing adaptive subcarrier intensity modulation over the Malaga turbulent channel. More specifically, analytical closed-form solutions and asymptotic results are derived for average bit error rate, achievable spectral efficiency, outage probability, and ergodic capacity by utilizing series expansion identity of modified Bessel function. Our asymptotic and analytical results based on series solutions with finite numbers highly matched to the numerical results. By exploiting the inherent nature of fading channel, the proposed adaptive scheme enhances the spectral efficiency without additional transmit power while satisfying the required bit error rate criterion. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

  7. Determination of niclosamide residues in rainbow trout (Oncorhynchus mykiss) and channel catfish (Ictalurus punctatus) fillet tissue by high-performance liquid chromatography

    Science.gov (United States)

    Schreier, Theresa M.; Dawson, V.K.; Cho, Yirang; Spanjers, N.J.; Boogaard, M.A.

    2000-01-01

    Bayluscide [the ethanolamine salt of niclosamide (NIC)] is a registered piscicide used in combination with 3-(trifluoromethyl)-4-nitrophenol (TFM) to control sea lamprey populations in streams tributary to the Great Lakes. A high-performance liquid chromatography (HPLC) method was developed for the determination of NIC residues in muscle fillet tissues of fish exposed to NIC and TFM during sea lamprey control treatments. NIC was extracted from fortified channel catfish and rainbow trout fillet tissue with a series of acetone extractions and cleaned up on C-18 solid-phase extraction cartridges. NIC concentrations were determined by HPLC with detection at 360 and 335 nm for rainbow trout and catfish, respectively. Recovery of NIC from rainbow trout (n = 7) fortified at 0.04 mu g/g was 77 +/- 6.5% and from channel catfish (n = 7) fortified at 0.02 mu g/g was 113 +/- 11%. NIC detection limit was 0.0107 mu g/g for rainbow trout and 0.0063 mu g/g for catfish. Percent recovery of incurred radioactive residues by this method from catfish exposed to [C-14]NIC was 89.3 +/- 4.1%. Percent recoveries of NIC from fortified storage stability tissue samples for rainbow trout (n = 3) analyzed at 5 and 7.5 month periods were 78 +/- 5.1 and 68 +/- 2.4%, respectively. Percent recoveries of NIC from fortified storage stability tissue samples for channel catfish (n = 3) analyzed at 5 and 7.5 month periods were 88 +/- 13 and 76 +/- 21%, respectively.

  8. A cement channel-detection technique using the pulsed-neutron log

    International Nuclear Information System (INIS)

    Myers, G.D.

    1991-01-01

    A channel-detection technique has been developed using boron solutions and pulsed-neutron logging (PNL) tools. This technique relies on the extremely high-neutron-absorption cross section that boron exhibits relative to other common elements, including chlorine. The PNL tool is used to detect movement of a boron solution in a log-inject-log procedure. The technique has identified channels in such difficult applications as logging through two strings of pipe and in highly deviated wellbores. Logging procedures are simple and cement channels can be readily identified. The boron solutions are relatively inexpensive, safe to handle, and nonradioactive. Additional PNL information for reservoir performance evaluation is collected simultaneously during channel-detection logging. This paper describes the theory, development, field application, and limitations of this channel-detection logging technique

  9. Growing three-dimensional biomorphic graphene powders using naturally abundant diatomite templates towards high solution processability.

    Science.gov (United States)

    Chen, Ke; Li, Cong; Shi, Liurong; Gao, Teng; Song, Xiuju; Bachmatiuk, Alicja; Zou, Zhiyu; Deng, Bing; Ji, Qingqing; Ma, Donglin; Peng, Hailin; Du, Zuliang; Rümmeli, Mark Hermann; Zhang, Yanfeng; Liu, Zhongfan

    2016-11-07

    Mass production of high-quality graphene with low cost is the footstone for its widespread practical applications. We present herein a self-limited growth approach for producing graphene powders by a small-methane-flow chemical vapour deposition process on naturally abundant and industrially widely used diatomite (biosilica) substrates. Distinct from the chemically exfoliated graphene, thus-produced biomorphic graphene is highly crystallized with atomic layer-thickness controllability, structural designability and less noncarbon impurities. In particular, the individual graphene microarchitectures preserve a three-dimensional naturally curved surface morphology of original diatom frustules, effectively overcoming the interlayer stacking and hence giving excellent dispersion performance in fabricating solution-processible electrodes. The graphene films derived from as-made graphene powders, compatible with either rod-coating, or inkjet and roll-to-roll printing techniques, exhibit much higher electrical conductivity (∼110,700 S m -1 at 80% transmittance) than previously reported solution-based counterparts. This work thus puts forward a practical route for low-cost mass production of various powdery two-dimensional materials.

  10. Nonlinear drift-diffusion model of gating in K and nACh ion channels

    Energy Technology Data Exchange (ETDEWEB)

    Vaccaro, S.R. [Department of Physics, University of Adelaide, Adelaide, South Australia 5005 (Australia)], E-mail: svaccaro@physics.adelaide.edu.au

    2007-09-03

    The configuration of a sensor regulates the transition between the closed and open states of both voltage and ligand gated channels. The closed state dwell-time distribution f{sub c}(t) derived from a Fokker-Planck equation with a nonlinear diffusion coefficient is in good agreement with experimental data and can account for the power law approximation to f{sub c}(t) for a delayed rectifier K channel and a nicotinic acetylcholine (nACh) ion channel. The solution of a master equation which approximates the Fokker-Planck equation provides a better description of the small time behaviour of the dwell-time distribution and can account for the empirical rate-amplitude correlation for these ion channels.

  11. A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

    International Nuclear Information System (INIS)

    Park, Se Jin; Moon, Sung Hwan; Min, Byoung Koun; Cho, Yunae; Kim, Ji Eun; Kim, Dong-Wook; Lee, Doh-Kwon; Gwak, Jihye; Kim, Jihyun

    2014-01-01

    Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(In x Ga 1−x )S 2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(In x Ga 1−x )(S 1−y Se y ) 2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm −2 . The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films. (paper)

  12. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  13. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Olsen, Sarah H.

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

  14. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  15. New Conotoxin SO-3 Targeting N-type Voltage-Sensitive Calcium Channels

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2006-04-01

    Full Text Available Selective blockers of the N-type voltage-sensitive calcium (CaV channels are useful in the management of severe chronic pain. Here, the structure and function characteristics of a novel N-type CaV channel blocker, SO-3, are reviewed. SO-3 is a 25-amino acid conopeptide originally derived from the venom of Conus striatus, and contains the same 4-loop, 6-cysteine framework (C-C-CC-C-C as O-superfamily conotoxins. The synthetic SO-3 has high analgesic activity similar to ω-conotoxin MVIIA (MVIIA, a selective N-type CaV channel blocker approved in the USA and Europe for the alleviation of persistent pain states. In electrophysiological studies, SO-3 shows more selectivity towards the N-type CaV channels than MVIIA. The dissimilarity between SO-3 and MVIIA in the primary and tertiary structures is further discussed in an attempt to illustrate the difference in selectivity of SO-3 and MVIIA towards N-type CaV channels.

  16. Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

    Science.gov (United States)

    Orouji, Ali A.; Ghaffari, Majid

    2015-11-01

    In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

  17. Progress in high-efficient solution process organic photovoltaic devices fundamentals, materials, devices and fabrication

    CERN Document Server

    Li, Gang

    2015-01-01

    This book presents an important technique to process organic photovoltaic devices. The basics, materials aspects and manufacturing of photovoltaic devices with solution processing are explained. Solution processable organic solar cells - polymer or solution processable small molecules - have the potential to significantly reduce the costs for solar electricity and energy payback time due to the low material costs for the cells, low cost and fast fabrication processes (ambient, roll-to-roll), high material utilization etc. In addition, organic photovoltaics (OPV) also provides attractive properties like flexibility, colorful displays and transparency which could open new market opportunities. The material and device innovations lead to improved efficiency by 8% for organic photovoltaic solar cells, compared to 4% in 2005. Both academic and industry research have significant interest in the development of this technology. This book gives an overview of the booming technology, focusing on the solution process fo...

  18. High-performance liquid chromatographic analysis of methadone hydrochloride oral solution.

    Science.gov (United States)

    Beasley, T H; Ziegler, H W

    1977-12-01

    A direct and rapid high-performance liquid chromatographic assay for methadone hydrochloride in a flavored oral solution dosage form is described. A syrup sample, one part diluted with three parts of water, is introduced onto a column packed with octadecylsilane bonded on 10 micrometer porous silica gel (reversed phase). A formic acid-ammonium formate-buffered mobile phase is linear programmed with acetonitrile. The absorbance is monitored continuously at 280 or 254 nm, using a flow-through, UV, double-beam photometer. An aqueous methadone hydrochloride solution is used for external standardization. The relative standard deviation was not more than 1.0%. Drug recovery from a syrup base was better than 99.8%.

  19. High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer.

    Science.gov (United States)

    Sun, Weihai; Li, Yunlong; Ye, Senyun; Rao, Haixia; Yan, Weibo; Peng, Haitao; Li, Yu; Liu, Zhiwei; Wang, Shufeng; Chen, Zhijian; Xiao, Lixin; Bian, Zuqiang; Huang, Chunhui

    2016-05-19

    During the past several years, methylammonium lead halide perovskites have been widely investigated as light absorbers for thin-film photovoltaic cells. Among the various device architectures, the inverted planar heterojunction perovskite solar cells have attracted special attention for their relatively simple fabrication and high efficiencies. Although promising efficiencies have been obtained in the inverted planar geometry based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) sulfonic acid ( PSS) as the hole transport material (HTM), the hydrophilicity of the PSS is a critical factor for long-term stability. In this paper, a CuOx hole transport layer from a facile solution-processed method was introduced into the inverted planar heterojunction perovskite solar cells. After the optimization of the devices, a champion PCE of 17.1% was obtained with an open circuit voltage (Voc) of 0.99 V, a short-circuit current (Jsc) of 23.2 mA cm(-2) and a fill factor (FF) of 74.4%. Furthermore, the unencapsulated device cooperating with the CuOx film exhibited superior performance in the stability test, compared to the device involving the PSS layer, indicating that CuOx could be a promising HTM for replacing PSS in inverted planar heterojunction perovskite solar cells.

  20. Grain Refinement and High-Performance of Equal-Channel Angular Pressed Cu-Mg Alloy for Electrical Contact Wire

    Directory of Open Access Journals (Sweden)

    Aibin Ma

    2014-12-01

    Full Text Available Multi-pass equal-channel angular pressing (EACP was applied to produce ultrafine-grained (UFG Cu-0.2wt%Mg alloy contact wire with high mechanical/electric performance, aim to overcome the catenary barrier of high-speed trains by maximizing the tension and improving the power delivery. Microstructure evolution and overall properties of the Cu-Mg alloy after different severe-plastic-deformation (SPD routes were investigated by microscopic observation, tensile and electric tests. The results show that the Cu-Mg alloy after multi-pass ECAP at 473 K obtains ultrafine grains, higher strength and desired conductivity. More passes of ECAP leads to finer grains and higher strength, but increasing ECAP temperature significantly lower the strength increment of the UFG alloy. Grain refinement via continuous SPD processing can endow the Cu-Mg alloy superior strength and good conductivity characteristics, which are advantageous to high-speed electrification railway systems.

  1. Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ying; Yang, Lin' an, E-mail: layang@xidian.edu.cn; Wang, Zhizhe; Chen, Qing; Huang, Yonghong; Dai, Yang; Chen, Haoran; Zhao, Hongliang; Hao, Yue [The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2014-09-07

    We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the “dead zone” at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation.

  2. Performance Analysis of Free-Space Optical Communication Systems With Multiuser Diversity Over Atmospheric Turbulence Channels

    KAUST Repository

    Yang, Liang

    2014-04-01

    Free-space optical (FSO) communication has become a cost-effective method to provide high data rates. However, the turbulence-induced fading limits its application to short-range applications. To address this, we propose a multiuser diversity (MD) FSO scheme in which the Nth best user is selected and the channel fluctuations can be effectively exploited to produce a selection diversity gain. More specifically, we first present the statistics analysis for the considered system over both weak and strong atmospheric turbulence channels. Based on these statistics, the outage probability, bit-error rate performance, average capacity, diversity order, and coverage are analyzed. Results show that the diversity order for the gamma-gamma fading is N min{α, β}/2, where N is the number of users, and α and β are the channel fading parameters related to the effective atmospheric conditions of the link.

  3. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  4. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  5. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  6. Ion Transport in Organic Electrolyte Solution through the Pore Channels of Anodic Nanoporous Alumina Membranes

    International Nuclear Information System (INIS)

    Fukutsuka, Tomokazu; Koyamada, Kohei; Maruyama, Shohei; Miyazaki, Kohei; Abe, Takeshi

    2016-01-01

    Highlights: • Ion transport in organic electrolyte solution in macro- and meso-pores was focused. • Anodic nanoporous alumina membrane was used as a porous material. • The specific ion conductivities drastically decreased in macro- and meso-pores. - Abstract: For the development of high energy density lithium-ion batteries with the high rate performance, the enhancement of the ion transport in the electrolyte solutions impregnated in the porous electrodes is a key. To study the ion transport in porous electrodes, anodic nanoporous alumina (APA) self-standing membranes with macro- or meso-pores were used as model porous materials. These membranes had nearly spherical pore channels of discrete 20–68 nm in diameters. By using the geometric shape of the pores, we attempted to evaluate the specific ion conductivities of the organic electrolyte solution dissolving lithium salt simply. AC impedance spectroscopy measurement of a four-electrode cell with membranes showed one depressed semi-circle in the Nyquist plots and this semi-circle can be assigned as the ion transport resistance in the pores. The specific ion conductivities evaluated from the ion transport resistances and the geometric parameters showed very small values, even in the macro-pores, as compared with that of the bulk electrolyte solution.

  7. Highly efficient electroluminescence from a solution-processable thermally activated delayed fluorescence emitter

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Yoshimasa; Kubo, Shosei; Suzuki, Katsuaki; Kaji, Hironori, E-mail: kaji@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Shizu, Katsuyuki [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Tanaka, Hiroyuki [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Adachi, Chihaya [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)

    2015-11-02

    We developed a thermally activated delayed fluorescence (TADF) emitter, 2,4,6-tris(4-(9,9-dimethylacridan-10-yl)phenyl)-1,3,5-triazine (3ACR-TRZ), suitable for use in solution-processed organic light-emitting diodes (OLEDs). When doped into 4,4′-bis(carbazol-9-yl)biphenyl (CBP) host at 16 wt. %, 3ACR-TRZ showed a high photoluminescence quantum yield of 98%. Transient photoluminescence decay measurements of the 16 wt. % 3ACR-TRZ:CBP film confirmed that 3ACR-TRZ exhibits efficient TADF with a triplet-to-light conversion efficiency of 96%. This high conversion efficiency makes 3ACR-TRZ attractive as an emitting dopant in OLEDs. Using 3ACR-TRZ as an emitter, we fabricated a solution-processed OLED exhibiting a maximum external quantum efficiency of 18.6%.

  8. A high speed dual-gain preamplifier system with multiple channels

    International Nuclear Information System (INIS)

    Zhao Lei; Liu Shubin; Xian Ze; An Qi

    2008-01-01

    In this paper, a multiple-channel high speed preamplifier module with dual-gain is presented, together with its design principle, test methods and performance parameter. By proper choice of the chips and careful circuit design, the preamplifier accomplishes a fine performance in high speed analog signal processing. The 3 dB bandwidth is above 440 MHz for gain factor of 2 and 280 MHz for gain factor of 8, with the leading edge time of less than 2 ns. The preamplifier module has been used in the research project of β-delayed neutron emission of radionuclides in neutron-rich region. (authors)

  9. Analysis of the process of raising the temperature in the spark channel at a discharge in gas

    CERN Document Server

    Korytchenko, K V; Chumakov, V I

    2001-01-01

    Analysis of the process of raising the temperature in the spark channel at a discharge in gas is performed. The quantitative evaluation was made in main for the air. The effect of steadying a thermodynamic equilibrium in gas,as well as the influence of power discharge parameters on the process of temperature increasing was analyzed. The quantitative evaluation of time parameters of the processes of rotary, oscillatory relaxation, dissociation and ionization has allowed to reveal the influence of each of them on temperature increasing in the spark channel. The problems arising in the course of practical realization of a spark discharge which influence on the process of temperature raising are detected,and the ways for their solution are determined. The results obtained can be put in a basis of developing the methods to design devices for intensive increase of temperatures in gas media using the electrical discharge,as well as for analysis of a dependence of shock wave intensity on dynamic parameters of the ele...

  10. Improving the service life and performance of CANDU fuel channels

    International Nuclear Information System (INIS)

    Causey, A.R.; Cheadle, B.A.; Coleman, C.E.; Price, E.G.

    1997-01-01

    The development objective for CANDU fuel channels is to produce a design that can operate for 40 years at 90% capacity. Steady progress toward this objective is being made. The factors that determine the life of the channel are reviewed and the processes necessary to achieve the objectives identified. Performance of future fuel channels will be enhanced by reduced operating costs, increased safety margins to postulated accident conditions, and reduced retubing costs compared to current channels. The approaches to these issues are discussed briefly in the paper. (author)

  11. Improving the service life and performance of CANDU fuel channels

    International Nuclear Information System (INIS)

    Coleman, C.E.; Cheadle, B.A.; Causey, A.R.; Doubt, G.L.; Fong, R.W.L.; Venkatapathi, S.

    1996-03-01

    The development objective for CANDU fuel channels is to produce a design that can operate for 40 years at 90% capacity. Steady progress toward this objective is being made. The factors that determine the life of a CANDU fuel channel are reviewed and the processes necessary to achieve the objectives are identified. Performance of future fuel channels will be enhanced by reduced operating costs and increased safety margins to postulated accident conditions compared with those for current channels. The approaches to these issues are discussed briefly in this report. (author)

  12. Optimization process for thin-walled high performance concrete sandwich panels

    DEFF Research Database (Denmark)

    Hodicky, Kamil; Hulin, Thomas; Schmidt, Jacob Wittrup

    2014-01-01

    with the specifications of the design constrains and variables. The tool integrates the processes of HPCSP design, quantity take-off and cost estimation into a single system that would provide different costs for different HPCSP designs. The proposed multi-objective optimisation scheme results into derivation of basic......A Nearly zero energy buildings are to become a requirement as part of the European energy policy. There are many ways of designing nearly zero energy buildings, but there is a lack of knowledge on optimization processes in the sense of structurally and thermally efficient design with an optimal...... economical solution. The present paper aims to provide multi-objective optimisation procedure addressed to structural precast thin-walled High Performance Concrete Sandwich Panels (HPCSP). The research aim is concerned with developing a tool that considers the cost of HPCSP materials along...

  13. Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

    Science.gov (United States)

    He, Yunlong; Wang, Chong; Mi, Minhan; Zhang, Meng; Zhu, Qing; Zhang, Peng; Wu, Ji; Zhang, Hengshuang; Zheng, Xuefeng; Yang, Ling; Duan, Xiaoling; Ma, Xiaohua; Hao, Yue

    2017-05-01

    A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) has been fabricated, by combining nanowire channel (NC) structure fabrication and N2O (or O2) plasma treatment. A comparison of two NC-HEMTs with different plasma treatments has been made. The NC-HEMT with N2O plasma treatment shows an output current of 610 mA/mm and a peak transconductance of 450 mS/mm. The DIBL of the NC-HEMT with N2O plasma treatment is as low as 2 mV/V, and an SS of 70 mV/decade is achieved. The device exhibits an intrinsic current gain cutoff frequency f T of 19 GHz and a maximum oscillation frequency f max of 58 GHz.

  14. Improved performance of organic solar cells with solution processed hole transport layer

    Science.gov (United States)

    Bhargav, Ranoo; Gairola, S. P.; Patra, Asit; Naqvi, Samya; Dhawan, S. K.

    2018-06-01

    This work is based on Cobalt Oxide as solution processed, inexpensive and effective hole transport layer (HTL) for efficient organic photovoltaic applications (OPVs). In Organic solar cell (OSC) devices ITO coated glass substrate used as a transparent anode electrode for light incident, HTL material Co3O4 dissolve in DMF solvent deposited on anode electrode, after that active layer material (donor/acceptor) deposited on to HTL and finally Al were deposited by thermal evaporation used as cathode electrode. These devices were fabricated with PCDTBT well known low band gap donor material in OSCs and blended with PC71BM as an acceptor material using simplest device structure ITO/Co3O4/active layer/Al at ambient conditions. The power conversion efficiencies (PCEs) based on Co3O4 and PEDOT:PSS have been achieved to up to 3.21% and 1.47% with PCDTBT respectively. In this study we reported that the devices fabricated with Co3O4 showed better performance as compare to the devices fabricated with well known and most studied solution processed HTL material PEDOT:PSS under identical environmental conditions. The surface morphology of the HTL film was characterized by (AFM). Lastly, we have provided Co3O4 as an efficient hole transport material HTL for solution processed organic photovoltaic applications.

  15. Effect of channel aspect ratio on chemical recuperation process in advanced aeroengines

    International Nuclear Information System (INIS)

    Zhang, Silong; Cui, Naigang; Xiong, Yuefei; Feng, Yu; Qin, Jiang; Bao, Wen

    2017-01-01

    The working process of an advanced aeroengine such as scramjet with endothermic hydrocarbon fuel cooling is a chemical recuperative cycle. The design of cooling channel in terms of engine real working conditions is very important for the chemical recuperation process. To study the effects of channel aspect ratio (AR) on chemical recuperation process of advanced aeroengines, three dimensional model of pyrolysis coolant flow inside asymmetrical rectangular cooling channels with fins is introduced and validated through experiments. Cases when AR varies from 1 to 8 are carried out. In the pyrolysis zone of the cooling channel, decreasing the channel aspect ratio can reduce the temperature difference and non-uniformity of fuel conversion in the channel cross section, and it can also increase the final conversion and corresponding chemical heat absorption. A small channel aspect ratio is beneficial for the chemical recuperation process and can guarantee the engine cooling performance in the pyrolysis zone of the cooling channel. - Highlights: • Large non-uniformity of conversion is bad for the chemical recuperation. • Small channel aspect ratio is beneficial for improving the chemical recuperation effectiveness. • Small channel aspect ratio is also beneficial for reducing the engine wall temperature.

  16. Durability of template-free Fe-N-C foams for electrochemical oxygen reduction in alkaline solution

    Science.gov (United States)

    Mufundirwa, Albert; Harrington, George F.; Smid, Břetislav; Cunning, Benjamin V.; Sasaki, Kazunari; Lyth, Stephen M.

    2018-01-01

    Due to the high cost and limited availability of platinum, the development of non-platinum-group metals (non-PGM) catalysts is of paramount importance. A promising alternative to Pt are Fe-N-C-based materials. Here we present the synthesis, characterization and electrochemistry of a template-free nitrogen-doped carbon foam, impregnated with iron. This low-cost and gram-scale method results in materials with micron-scale pore size and large surface area (1600 m2g-1). When applied as an oxygen reduction reaction (ORR) electrocatalyst in alkaline solution, the Fe-N-C foams display extremely high initial activity, slightly out-performing commercially available non-PGM catalysts (NCP-2000, Pajarito Powder). The load-cycle durability in alkaline solution is investigated, and the performance steadily degrades over 60,000 potential cycles, whilst the commercial catalyst is remarkably stable. The post-operation catalyst microstructure is elucidated by transmission electron microscopy (TEM), to provide insight into the degradation processes. The resulting images suggest that potential cycling leads to leaching of atomically dispersed Fe-N2/4 sites in all the catalysts, whereas encapsulated iron nanoparticles are protected.

  17. A Facile All-Solution-Processed Surface with High Water Contact Angle and High Water Adhesive Force.

    Science.gov (United States)

    Chen, Mei; Hu, Wei; Liang, Xiao; Zou, Cheng; Li, Fasheng; Zhang, Lanying; Chen, Feiwu; Yang, Huai

    2017-07-12

    A series of sticky superhydrophobicity surfaces with high water contact angle and high water adhesive force is facilely prepared via an all-solution-processed method based on polymerization-induced phase separation between liquid crystals (LCs) and epoxy resin, which produces layers of epoxy microspheres (EMSs) with nanofolds on the surface of a substrate. The morphologies and size distributions of EMSs are confirmed by scanning electron microscopy. Results reveal that the obtained EMS coated-surface exhibits high apparent contact angle of 152.0° and high water adhesive force up to 117.6 μN. By varying the composition of the sample or preparing conditions, the sizes of the produced EMSs can be artificially regulated and, thus, control the wetting properties and water adhesive behaviors. Also, the sticky superhydrophobic surface exhibits excellent chemical stability, as well as long-term durability. Water droplet transportation experiments further prove that the as-made surface can be effectively used as a mechanical hand for water transportation applications. Based on this, it is believed that the simple method proposed in this paper will pave a new way for producing a sticky superhydrophobic surface and obtain a wide range of use.

  18. Optimization Solutions for Improving the Performance of the Parallel Reduction Algorithm Using Graphics Processing Units

    Directory of Open Access Journals (Sweden)

    Ion LUNGU

    2012-01-01

    Full Text Available In this paper, we research, analyze and develop optimization solutions for the parallel reduction function using graphics processing units (GPUs that implement the Compute Unified Device Architecture (CUDA, a modern and novel approach for improving the software performance of data processing applications and algorithms. Many of these applications and algorithms make use of the reduction function in their computational steps. After having designed the function and its algorithmic steps in CUDA, we have progressively developed and implemented optimization solutions for the reduction function. In order to confirm, test and evaluate the solutions' efficiency, we have developed a custom tailored benchmark suite. We have analyzed the obtained experimental results regarding: the comparison of the execution time and bandwidth when using graphic processing units covering the main CUDA architectures (Tesla GT200, Fermi GF100, Kepler GK104 and a central processing unit; the data type influence; the binary operator's influence.

  19. Product of the powers of generalized Nakagami-m variates and performance of cascaded fading channels

    KAUST Repository

    Yilmaz, Ferkan

    2009-11-01

    In this paper, we analyze the fading statistics of a generic fading distribution, termed the N-product Generalized Nakagami-m (GNM) distribution (N*GNM distribution), constructed as the product of the power of N statistically independent and non-identically distributed GNM random variables, for the purpose of modeling the cascaded fading channels. In particular, using the Fox\\'s H function, we derive the probability density function, the cumulative distribution function, the moment generating function and the moments of such channels in closed-form. These derived results are a convenient tool to statistically model the cascaded GNM fading channels and to analyze the performance of digital communication systems over these kinds of channels. As such, generic closed-form expressions for the amount of fading, the outage probability, the capacity, the outage capacity and the average bit error probabilities of digital communications systems over cascaded GNM fading channels are presented. Numerical and simulation results, performed to verify the correctness of the proposed formulation, are in perfect agreement.

  20. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    International Nuclear Information System (INIS)

    Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

    2005-01-01

    Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

  1. High-current discharge channel contraction in high density gas

    International Nuclear Information System (INIS)

    Rutberg, Ph. G.; Bogomaz, A. A.; Pinchuk, M. E.; Budin, A. V.; Leks, A. G.; Pozubenkov, A. A.

    2011-01-01

    Research results for discharges at current amplitudes of 0.5-1.6 MA and current rise rate of ∼10 10 A/s are presented. The discharge is performed in the hydrogen environment at the initial pressure of 5-35 MPa. Initiation is implemented by a wire explosion. The time length of the first half-period of the discharge current is 70-150 μs. Under such conditions, discharge channel contraction is observed; the contraction is followed by soft x-ray radiation. The phenomena are discussed, which are determined by high density of the gas surrounding the discharge channel. These phenomena are increase of the current critical value, where the channel contraction begins and growth of temperature in the axis region of the channel, where the initial density of the gas increases.

  2. Mild solution-processed metal-doped TiO2 compact layers for hysteresis-less and performance-enhanced perovskite solar cells

    Science.gov (United States)

    Liang, Chao; Li, Pengwei; Zhang, Yiqiang; Gu, Hao; Cai, Qingbin; Liu, Xiaotao; Wang, Jiefei; Wen, Hua; Shao, Guosheng

    2017-12-01

    TiO2 is extensively used as electron-transporting material on perovskite solar cells (PSCs). However, traditional TiO2 processing method needs high annealing temperature (>450 °C) and pure TiO2 suffers from low electrical mobility and poor conductivity. In this study, a general one-pot solution-processed method is devised to grow uniform crystallized metal-doped TiO2 thin film as large as 15 × 15 cm2. The doping process can be controlled effectively via a series of doping precursors from niobium (V), tin (IV), tantalum (V) to tungsten (VI) chloride. As far as we know, this is so far the lowest processing temperature for metal-doped TiO2 compact layers, as low as 70 °C. The overall performance of PSCs employing the metal-doped TiO2 layers is significantly improved in term of hysteresis effect, short circuit current, open-circuit voltage, fill factor, power conversion efficiency, and device stability. With the insertion of metal ions into TiO2 lattice, the corresponding CH3NH3PbI3 PSC leads to a ∼25% improved PCE of over 16% under irradiance of 100 mW cm-2 AM1.5G sunlight, compared with control device. The results indicate that this mild solution-processed metal-doped TiO2 is an effective industry-scale way for fabricating hysteresis-less and high-performance PSCs.

  3. Improving the service life and performance of CANDU fuel channels

    International Nuclear Information System (INIS)

    Causey, A.R.; Cheadle, B.A.; Coleman, C.E.; Price, E.G.

    1996-02-01

    The development objective for CANDU fuel channels is to produce a design that can operate for 40 years at 90% capacity. Steady progress toward this objective is being made. The factors that determine the life of a CANDU fuel channel are reviewed and the processes necessary to achieve the objectives identified. Performance of future fuel channels will be enhanced by reduced operating costs, increased safety margins to postulated accident conditions, and reduced retubing costs compared with those for current channels. The approaches to these issues are discussed briefly in this report. (author). 14 refs., 1 tab., 8 figs

  4. A salt water battery with high stability and charging rates made from solution processed conjugated polymers with polar side chains

    KAUST Repository

    Moia, Davide

    2017-11-28

    We report a neutral salt water based battery which uses p-type and n-type solution processed polymer films as the cathode and the anode of the cell. The specific capacity of the electrodes (approximately 30 mAh cm-3) is achieved via formation of bipolarons in both the p-type and n-type polymers. By engineering ethylene glycol and zwitterion based side chains attached to the polymer backbone we facilitate rapid ion transport through the non-porous polymer films. This, combined with efficient transport of electronic charge via the conjugated polymer backbones, allowed the films to maintain constant capacity at high charge and discharge rates (>1000 C-rate). The electrodes also show good stability during electrochemical cycling (less than 30% decrease in capacity over >1000 cycles) and an output voltage up to 1.4 V. The performance of these semiconducting polymers with polar side-chains demonstrates the potential of this material class for fast-charging, water based electrochemical energy storage devices.

  5. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Science.gov (United States)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  6. Performance Analysis of Iterative Channel Estimation and Multiuser Detection in Multipath DS-CDMA Channels

    Science.gov (United States)

    Li, Husheng; Betz, Sharon M.; Poor, H. Vincent

    2007-05-01

    This paper examines the performance of decision feedback based iterative channel estimation and multiuser detection in channel coded aperiodic DS-CDMA systems operating over multipath fading channels. First, explicit expressions describing the performance of channel estimation and parallel interference cancellation based multiuser detection are developed. These results are then combined to characterize the evolution of the performance of a system that iterates among channel estimation, multiuser detection and channel decoding. Sufficient conditions for convergence of this system to a unique fixed point are developed.

  7. Sigma-1 Receptor Plays a Negative Modulation on N-type Calcium Channel

    Directory of Open Access Journals (Sweden)

    Kang Zhang

    2017-05-01

    Full Text Available The sigma-1 receptor is a 223 amino acids molecular chaperone with a single transmembrane domain. It is resident to eukaryotic mitochondrial-associated endoplasmic reticulum and plasma membranes. By chaperone-mediated interactions with ion channels, G-protein coupled receptors and cell-signaling molecules, the sigma-1 receptor performs broad physiological and pharmacological functions. Despite sigma-1 receptors have been confirmed to regulate various types of ion channels, the relationship between the sigma-1 receptor and N-type Ca2+ channel is still unclear. Considering both sigma-1 receptors and N-type Ca2+ channels are involved in intracellular calcium homeostasis and neurotransmission, we undertake studies to explore the possible interaction between these two proteins. In the experiment, we confirmed the expression of the sigma-1 receptors and the N-type calcium channels in the cholinergic interneurons (ChIs in rat striatum by using single-cell reverse transcription-polymerase chain reaction (scRT-PCR and immunofluorescence staining. N-type Ca2+ currents recorded from ChIs in the brain slice of rat striatum was depressed when sigma-1 receptor agonists (SKF-10047 and Pre-084 were administrated. The inhibition was completely abolished by sigma-1 receptor antagonist (BD-1063. Co-expression of the sigma-1 receptors and the N-type calcium channels in Xenopus oocytes presented a decrease of N-type Ca2+ current amplitude with an increase of sigma-1 receptor expression. SKF-10047 could further depress N-type Ca2+ currents recorded from oocytes. The fluorescence resonance energy transfer (FRET assays and co-immunoprecipitation (Co-IP demonstrated that sigma-1 receptors and N-type Ca2+ channels formed a protein complex when they were co-expressed in HEK-293T (Human Embryonic Kidney -293T cells. Our results revealed that the sigma-1 receptors played a negative modulation on N-type Ca2+ channels. The mechanism for the inhibition of sigma-1 receptors on

  8. Molecular beam epitaxy for high-performance Ga-face GaN electron devices

    International Nuclear Information System (INIS)

    Kaun, Stephen W; Speck, James S; Wong, Man Hoi; Mishra, Umesh K

    2013-01-01

    Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT performance steadily improved, mainly through the optimization of device fabrication processes. Soon, HEMT performance will be limited by the crystalline quality of the epistructure. MBE offers heterostructure growth with highly abrupt interfaces, low point defect concentrations, and very low carbon and hydrogen impurity concentrations. Minimizing parasitic leakage pathways and resistances is essential in the growth of HEMTs for high-frequency and high-power applications. Through growth on native substrates with very low threading dislocation density, low-leakage HEMTs with very low on-resistance can be realized. Ga-rich plasma-assisted MBE (PAMBE) has been studied extensively, and it is clear that this technique has inherent limitations, including a high density of leakage pathways and a very small growth parameter space. Relatively new MBE growth techniques—high-temperature N-rich PAMBE and ammonia-based MBE—are being developed to circumvent the shortcomings of Ga-rich PAMBE. (invited review)

  9. Towards High Performance Processing In Modern Java Based Control Systems

    CERN Document Server

    Misiowiec, M; Buttner, M

    2011-01-01

    CERN controls software is often developed on Java foundation. Some systems carry out a combination of data, network and processor intensive tasks within strict time limits. Hence, there is a demand for high performing, quasi real time solutions. Extensive prototyping of the new CERN monitoring and alarm software required us to address such expectations. The system must handle dozens of thousands of data samples every second, along its three tiers, applying complex computations throughout. To accomplish the goal, a deep understanding of multithreading, memory management and interprocess communication was required. There are unexpected traps hidden behind an excessive use of 64 bit memory or severe impact on the processing flow of modern garbage collectors. Tuning JVM configuration significantly affects the execution of the code. Even more important is the amount of threads and the data structures used between them. Accurately dividing work into independent tasks might boost system performance. Thorough profili...

  10. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    International Nuclear Information System (INIS)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  11. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  12. Impedance spectroscopy of micro-Droplets reveals activation of Bacterial Mechanosensitive Channels in Hypotonic Solutions

    Science.gov (United States)

    Ebrahimi, Aida; Alam, Muhammad A.

    Rapid detection of bacterial pathogens is of great importance in healthcare, food safety, environmental monitoring, and homeland security. Most bacterial detection platforms rely on binary fission (i.e. cell growth) to reach a threshold cell population that can be resolved by the sensing method. Since cell division depends on the bacteria type, the detection time of such methods can vary from hours to days. In contrast, in this work, we show that bacteria cells can be detected within minutes by relying on activation of specific protein channels, i.e. mechanosensitive channels (MS channels). When cells are exposed to hypotonic solutions, MS channels allow efflux of solutes to the external solution which leads to release the excessive membrane tension. Release of the cytoplasmic solutes, in turn, results in increase of the electrical conductance measured by droplet-based impedance sensing. The approach can be an effective technique for fast, pre-screening of bacterial contamination at ultra-low concentration.

  13. Fluid and solute transport in a network of channels

    International Nuclear Information System (INIS)

    Moreno, L.; Neretnieks, I.

    1991-09-01

    A three-dimensional channel network model is presented. The fluid flow and solute transport are assumed to take place through a network of connected channels. The channels are generated assuming that the conductances are lognormally distributed. The flow is calculated resolving the pressure distribution and the sole transport is calculated by using a particle tracking technique. The model includes diffusion into the rock matrix and sorption within the matrix in addition to advection along the channel network. Different approaches are used to describe the channel volume and its relation to the conductivity. To quantify the diffusion into the rock matrix the size of the flow wetted surface (contact surface between the channel and the rock) is needed in addition to the diffusion properties and the sorption capacity of the rock. Two different geometries were simulated: regional parallel flow and convergent flow toward a tunnel. In the generation of the channel network, it is found that its connectivity is reduced when the standard deviation in conductances is increased. For large standard deviations, the water conducting channels are found to be few. Standard deviations for the distribution of the effluent channel flowrates were calculated. Comparisons were made with experimental data from drifts and tunnels as well as boreholes as a means to validate the model. (au) (31 refs.)

  14. Compressive Sensing Based Bayesian Sparse Channel Estimation for OFDM Communication Systems: High Performance and Low Complexity

    Science.gov (United States)

    Xu, Li; Shan, Lin; Adachi, Fumiyuki

    2014-01-01

    In orthogonal frequency division modulation (OFDM) communication systems, channel state information (CSI) is required at receiver due to the fact that frequency-selective fading channel leads to disgusting intersymbol interference (ISI) over data transmission. Broadband channel model is often described by very few dominant channel taps and they can be probed by compressive sensing based sparse channel estimation (SCE) methods, for example, orthogonal matching pursuit algorithm, which can take the advantage of sparse structure effectively in the channel as for prior information. However, these developed methods are vulnerable to both noise interference and column coherence of training signal matrix. In other words, the primary objective of these conventional methods is to catch the dominant channel taps without a report of posterior channel uncertainty. To improve the estimation performance, we proposed a compressive sensing based Bayesian sparse channel estimation (BSCE) method which cannot only exploit the channel sparsity but also mitigate the unexpected channel uncertainty without scarifying any computational complexity. The proposed method can reveal potential ambiguity among multiple channel estimators that are ambiguous due to observation noise or correlation interference among columns in the training matrix. Computer simulations show that proposed method can improve the estimation performance when comparing with conventional SCE methods. PMID:24983012

  15. High performance GPU processing for inversion using uniform grid searches

    Science.gov (United States)

    Venetis, Ioannis E.; Saltogianni, Vasso; Stiros, Stathis; Gallopoulos, Efstratios

    2017-04-01

    Many geophysical problems are described by systems of redundant, highly non-linear systems of ordinary equations with constant terms deriving from measurements and hence representing stochastic variables. Solution (inversion) of such problems is based on numerical, optimization methods, based on Monte Carlo sampling or on exhaustive searches in cases of two or even three "free" unknown variables. Recently the TOPological INVersion (TOPINV) algorithm, a grid search-based technique in the Rn space, has been proposed. TOPINV is not based on the minimization of a certain cost function and involves only forward computations, hence avoiding computational errors. The basic concept is to transform observation equations into inequalities on the basis of an optimization parameter k and of their standard errors, and through repeated "scans" of n-dimensional search grids for decreasing values of k to identify the optimal clusters of gridpoints which satisfy observation inequalities and by definition contain the "true" solution. Stochastic optimal solutions and their variance-covariance matrices are then computed as first and second statistical moments. Such exhaustive uniform searches produce an excessive computational load and are extremely time consuming for common computers based on a CPU. An alternative is to use a computing platform based on a GPU, which nowadays is affordable to the research community, which provides a much higher computing performance. Using the CUDA programming language to implement TOPINV allows the investigation of the attained speedup in execution time on such a high performance platform. Based on synthetic data we compared the execution time required for two typical geophysical problems, modeling magma sources and seismic faults, described with up to 18 unknown variables, on both CPU/FORTRAN and GPU/CUDA platforms. The same problems for several different sizes of search grids (up to 1012 gridpoints) and numbers of unknown variables were solved on

  16. Technetium recovery from high alkaline solution

    Energy Technology Data Exchange (ETDEWEB)

    Nash, Charles A.

    2016-07-12

    Disclosed are methods for recovering technetium from a highly alkaline solution. The highly alkaline solution can be a liquid waste solution from a nuclear waste processing system. Methods can include combining the solution with a reductant capable of reducing technetium at the high pH of the solution and adding to or forming in the solution an adsorbent capable of adsorbing the precipitated technetium at the high pH of the solution.

  17. Manufacturing polymer light emitting diode with high luminance efficiency by solution process

    Science.gov (United States)

    Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

    2012-06-01

    While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

  18. Microencapsulation of Bioactive Principles with an Airless Spray-Gun Suitable for Processing High Viscous Solutions

    Directory of Open Access Journals (Sweden)

    Moreno Cocchietto

    2013-11-01

    Full Text Available Purpose: to design, assemble and test a prototype of a novel production plant, suitable for producing microparticles (MPs by processing highly viscous feed solutions (FSs. Methods: the prototype has been built using a commercial air compressor, a piston pump, an airless spray-gun, a customized air-treatment section, a timer, a rotating base, and a filtration section. Preliminary prototype parameter setting was carried out to individuate the best performing nozzle’s dimension, the nebulization timing, and the CaCl2 concentration in the gelation fluid. In addition, prototype throughput (1 L to 5 L and the range of practicable feed solution (FS viscosities were assayed. A set of four batches was prepared in order to characterize the MPs, in terms of mean particle size and distribution, flow properties, swelling, encapsulation efficiency and release. Results: according to a qualitative scoring, the large nozzle was suitable to nebulize FSs at a higher alginate concentration. Conversely, the small nozzle performed better in the processing of FSs with an alginate concentration up to 2% w/v. Only at the highest degree of viscosity, corresponding to 5% w/v of alginate, the FS processing was not technically possible. Among the CaCl2 concentrations considered, 15% w/v was recognized as the most versatile. The prototype appears to be convenient and suitable to grant a high yield starting from 2 L of FS. The flow behavior of the FSs assayed can be satisfactorily described with the Carreau-Yasuda equation and the throughput begins to slightly decrease for FSs at alginate concentrations exceeding 3% w/v. MP morphology was irregular with crumpled shape. The angle of repose indicates a good flowability and the release studies showed gastro-resistance and potential prolonged release applications. Conclusions: the novel prototype of production plant is suitable to process large amounts (2 L or more of FSs, characterized by a high viscosity, to produce MPs

  19. Microencapsulation of bioactive principles with an airless spray-gun suitable for processing high viscous solutions.

    Science.gov (United States)

    Cocchietto, Moreno; Blasi, Paolo; Lapasin, Romano; Moro, Chiara; Gallo, Davide; Sava, Gianni

    2013-11-19

    to design, assemble and test a prototype of a novel production plant, suitable for producing microparticles (MPs) by processing highly viscous feed solutions (FSs). the prototype has been built using a commercial air compressor, a piston pump, an airless spray-gun, a customized air-treatment section, a timer, a rotating base, and a filtration section. Preliminary prototype parameter setting was carried out to individuate the best performing nozzle's dimension, the nebulization timing, and the CaCl2 concentration in the gelation fluid. In addition, prototype throughput (1 L to 5 L) and the range of practicable feed solution (FS) viscosities were assayed. A set of four batches was prepared in order to characterize the MPs, in terms of mean particle size and distribution, flow properties, swelling, encapsulation efficiency and release. according to a qualitative scoring, the large nozzle was suitable to nebulize FSs at a higher alginate concentration. Conversely, the small nozzle performed better in the processing of FSs with an alginate concentration up to 2% w/v. Only at the highest degree of viscosity, corresponding to 5% w/v of alginate, the FS processing was not technically possible. Among the CaCl2 concentrations considered, 15% w/v was recognized as the most versatile. The prototype appears to be convenient and suitable to grant a high yield starting from 2 L of FS. The flow behavior of the FSs assayed can be satisfactorily described with the Carreau-Yasuda equation and the throughput begins to slightly decrease for FSs at alginate concentrations exceeding 3% w/v. MP morphology was irregular with crumpled shape. The angle of repose indicates a good flowability and the release studies showed gastro-resistance and potential prolonged release applications. the novel prototype of production plant is suitable to process large amounts (2 L or more) of FSs, characterized by a high viscosity, to produce MPs suitable for bioactive principle delivery.

  20. An O(NlogN Algorithm for Region Definition Using Channels/Switchboxes and Ordering Assignment

    Directory of Open Access Journals (Sweden)

    Jin-Tai Yan

    1996-01-01

    Full Text Available For a building block placement, the routing space can be further partitioned into channels and switchboxes. In general, the definition of switchboxes releases the cyclic channel precedence constraints and further yields a safe routing ordering process. However, switchbox routing is more difficult than channel routing. In this paper, an O(NlogN region definition and ordering assignment (RDAOA algorithm is proposed to minimize the number of switchboxes for the routing phase, where N is the number of vertices in a channel precedence graph. Several examples have been tested on the proposed algorithm, and the experimental results are listed and compared.

  1. Digitally controlled high-performance dc SQUID readout electronics for a 304-channel vector magnetometer

    Science.gov (United States)

    Bechstein, S.; Petsche, F.; Scheiner, M.; Drung, D.; Thiel, F.; Schnabel, A.; Schurig, Th

    2006-06-01

    Recently, we have developed a family of dc superconducting quantum interference device (SQUID) readout electronics for several applications. These electronics comprise a low-noise preamplifier followed by an integrator, and an analog SQUID bias circuit. A highly-compact low-power version with a flux-locked loop bandwidth of 0.3 MHz and a white noise level of 1 nV/√Hz was specially designed for a 304-channel low-Tc dc SQUID vector magnetometer, intended to operate in the new Berlin Magnetically Shielded Room (BMSR-2). In order to minimize the space needed to mount the electronics on top of the dewar and to minimize the power consumption, we have integrated four electronics channels on one 3 cm × 10 cm sized board. Furthermore we embedded the analog components of these four channels into a digitally controlled system including an in-system programmable microcontroller. Four of these integrated boards were combined to one module with a size of 4 cm × 4 cm × 16 cm. 19 of these modules were implemented, resulting in a total power consumption of about 61 W. To initialize the 304 channels and to service the system we have developed software tools running on a laptop computer. By means of these software tools the microcontrollers are fed with all required data such as the working points, the characteristic parameters of the sensors (noise, voltage swing), or the sensor position inside of the vector magnetometer system. In this paper, the developed electronics including the software tools are described, and first results are presented.

  2. Digitally controlled high-performance dc SQUID readout electronics for a 304-channel vector magnetometer

    International Nuclear Information System (INIS)

    Bechstein, S; Petsche, F; Scheiner, M; Drung, D; Thiel, F; Schnabel, A; Schurig, Th

    2006-01-01

    Recently, we have developed a family of dc superconducting quantum interference device (SQUID) readout electronics for several applications. These electronics comprise a low-noise preamplifier followed by an integrator, and an analog SQUID bias circuit. A highly-compact low-power version with a flux-locked loop bandwidth of 0.3 MHz and a white noise level of 1 nV/√Hz was specially designed for a 304-channel low-T c dc SQUID vector magnetometer, intended to operate in the new Berlin Magnetically Shielded Room (BMSR-2). In order to minimize the space needed to mount the electronics on top of the dewar and to minimize the power consumption, we have integrated four electronics channels on one 3 cm x 10 cm sized board. Furthermore we embedded the analog components of these four channels into a digitally controlled system including an in-system programmable microcontroller. Four of these integrated boards were combined to one module with a size of 4 cm x 4 cm x 16 cm. 19 of these modules were implemented, resulting in a total power consumption of about 61 W. To initialize the 304 channels and to service the system we have developed software tools running on a laptop computer. By means of these software tools the microcontrollers are fed with all required data such as the working points, the characteristic parameters of the sensors (noise, voltage swing), or the sensor position inside of the vector magnetometer system. In this paper, the developed electronics including the software tools are described, and first results are presented

  3. Digitally controlled high-performance dc SQUID readout electronics for a 304-channel vector magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Bechstein, S [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Petsche, F [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Scheiner, M [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Drung, D [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Thiel, F [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Schnabel, A [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Schurig, Th [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany)

    2006-06-01

    Recently, we have developed a family of dc superconducting quantum interference device (SQUID) readout electronics for several applications. These electronics comprise a low-noise preamplifier followed by an integrator, and an analog SQUID bias circuit. A highly-compact low-power version with a flux-locked loop bandwidth of 0.3 MHz and a white noise level of 1 nV/{radical}Hz was specially designed for a 304-channel low-T{sub c} dc SQUID vector magnetometer, intended to operate in the new Berlin Magnetically Shielded Room (BMSR-2). In order to minimize the space needed to mount the electronics on top of the dewar and to minimize the power consumption, we have integrated four electronics channels on one 3 cm x 10 cm sized board. Furthermore we embedded the analog components of these four channels into a digitally controlled system including an in-system programmable microcontroller. Four of these integrated boards were combined to one module with a size of 4 cm x 4 cm x 16 cm. 19 of these modules were implemented, resulting in a total power consumption of about 61 W. To initialize the 304 channels and to service the system we have developed software tools running on a laptop computer. By means of these software tools the microcontrollers are fed with all required data such as the working points, the characteristic parameters of the sensors (noise, voltage swing), or the sensor position inside of the vector magnetometer system. In this paper, the developed electronics including the software tools are described, and first results are presented.

  4. Designing Metallic and Insulating Nanocrystal Heterostructures to Fabricate Highly Sensitive and Solution Processed Strain Gauges for Wearable Sensors.

    Science.gov (United States)

    Lee, Woo Seok; Lee, Seung-Wook; Joh, Hyungmok; Seong, Mingi; Kim, Haneun; Kang, Min Su; Cho, Ki-Hyun; Sung, Yun-Mo; Oh, Soong Ju

    2017-12-01

    All-solution processed, high-performance wearable strain sensors are demonstrated using heterostructure nanocrystal (NC) solids. By incorporating insulating artificial atoms of CdSe quantum dot NCs into metallic artificial atoms of Au NC thin film matrix, metal-insulator heterostructures are designed. This hybrid structure results in a shift close to the percolation threshold, modifying the charge transport mechanism and enhancing sensitivity in accordance with the site percolation theory. The number of electrical pathways is also manipulated by creating nanocracks to further increase its sensitivity, inspired from the bond percolation theory. The combination of the two strategies achieves gauge factor up to 5045, the highest sensitivity recorded among NC-based strain gauges. These strain sensors show high reliability, durability, frequency stability, and negligible hysteresis. The fundamental charge transport behavior of these NC solids is investigated and the combined site and bond percolation theory is developed to illuminate the origin of their enhanced sensitivity. Finally, all NC-based and solution-processed strain gauge sensor arrays are fabricated, which effectively measure the motion of each finger joint, the pulse of heart rate, and the movement of vocal cords of human. This work provides a pathway for designing low-cost and high-performance electronic skin or wearable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. All-Solution-Processed Metal-Oxide-Free Flexible Organic Solar Cells with Over 10% Efficiency.

    Science.gov (United States)

    Song, Wei; Fan, Xi; Xu, Bingang; Yan, Feng; Cui, Huiqin; Wei, Qiang; Peng, Ruixiang; Hong, Ling; Huang, Jiaming; Ge, Ziyi

    2018-05-16

    All-solution-processing at low temperatures is important and desirable for making printed photovoltaic devices and also offers the possibility of a safe and cost-effective fabrication environment for the devices. Herein, an all-solution-processed flexible organic solar cell (OSC) using poly(3,4-ethylenedioxythiophene):poly-(styrenesulfonate) electrodes is reported. The all-solution-processed flexible devices yield the highest power conversion efficiency of 10.12% with high fill factor of over 70%, which is the highest value for metal-oxide-free flexible OSCs reported so far. The enhanced performance is attributed to the newly developed gentle acid treatment at room temperature that enables a high-performance PEDOT:PSS/plastic underlying substrate with a matched work function (≈4.91 eV), and the interface engineering that endows the devices with better interface contacts and improved hole mobility. Furthermore, the flexible devices exhibit an excellent mechanical flexibility, as indicated by a high retention (≈94%) of the initial efficiency after 1000 bending cycles. This work provides a simple route to fabricate high-performance all-solution-processed flexible OSCs, which is important for the development of printing, blading, and roll-to-roll technologies. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Thermally Activated Delayed Fluorescence in Polymers: A New Route toward Highly Efficient Solution Processable OLEDs.

    Science.gov (United States)

    Nikolaenko, Andrey E; Cass, Michael; Bourcet, Florence; Mohamad, David; Roberts, Matthew

    2015-11-25

    Efficient intermonomer thermally activated delayed fluorescence is demonstrated for the first time, opening a new route to achieving high-efficiency solution processable polymer light-emitting device materials. External quantum efficiency (EQE) of up to 10% is achieved in a simple fully solution-processed device structure, and routes for further EQE improvement identified. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  8. Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

    Science.gov (United States)

    Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

    2018-05-09

    Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

  9. Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

    International Nuclear Information System (INIS)

    Alkis, Sabri; Alevli, Mustafa; Burzhuev, Salamat; Vural, Hüseyin Avni; Okyay, Ali Kemal; Ortaç, Bülend

    2012-01-01

    We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9–25.3, 5.45–34.8, 3.24–36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region.

  10. Tips pentacene crystal alignment for improving performance of solution processed organic thin film transistors

    Science.gov (United States)

    He, Zhengran

    A newly-developed p-type organic semiconductor 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) demonstrates various advantages such as high mobility, air stability and solution processibility, but at the same time its application is restricted by major issues, such as crystal misorientation and performance variation of organic thin-film transistors (OTFTs). This dissertation demonstrates several different approaches to address these issues. As a result, both crystal orientation and areal coverage can be effectively improved, leading to an enhancement of average mobility and performance consistency of OTFTs. Chapter 1 presents an introduction and background of this dissertation. Chapter 2 explores the usage of inorganic silica nanoparticles to manipulate the morphology of TIPS pentacene thin films and the performance of solution-processed organic OTFTs. The resultant drop-cast films yield improved morphological uniformity at ~10% SiO2 loading, which also leads to a 3-fold increase in average mobility and nearly 4-times reduction in the ratio of standard deviation of mobility (μStdev) to average mobility (μAvg). The experimental results suggest that the SiO2 nanoparticles mostly aggregate at TIPS pentacene grain boundaries, and that 10% nanoparticle concentration effectively reduces the undesirable crystal misorientation without considerably compromising TIPS pentacene crystallinity. Chapter 3 discusses the utilization of air flow to effectively reduce the TIPS pentacene crystal anisotropy and enhance performance consistency in OTFTs. Under air-flow navigation (AFN), TIPS pentacene forms thin films with improved crystal orientation and increased areal coverage, which subsequently lead to a four-fold increase of average hole mobility and one order of magnitude enhancement in performance consistency. Chapter 4 investigates the critical roles of lateral and vertical phase separation in the performance of the next-generation organic and hybrid electronic

  11. [Preparation and evaluation of stationary phase of high performance liquid chromatography for the separation of basic solutes].

    Science.gov (United States)

    Wang, P; Wang, J; Cong, R; Dong, B

    1997-05-01

    A bonded phase for high performance liquid chromatography (HPLC) has been prepared by the new reaction between silica and silicon ether. The ether was synthesized from alkylchlorosilane and pentane-2,4-dione in the presence of imidazole under inert conditions by using anhydrous tetrahydrofuran as solvent. The bonded phase thus obtained was characterized by elemental analysis, diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy and HPLC evaluation. The carbon content was 9.4% and the surface coverage almost attained 3.0micromol/m2 without end-capping. The silanol absorption peaks of the product cannot be observed from the DRIFT spectrum, which revealed that the silanization reaction proceeded thoroughly. The basic solutes, such as aniline, o-toluidine, p-toluidine, N,N-dimethylaniline and pyridine were used as the probe solutes to examine their interaction with the residual silanols on the surface of the products. No buffer or salt was used in the mobile phase for these experiments. In comparison with an acidic solute, such as, phenol, basic aniline eluted in front of phenol, and the ratio of asymmetry of aniline peak to that of the phenol peak was 1.1. Furthermore the relative k' value of p-toluidine to that of o-toluidine was also 1.1. All the results showed that the stationary phase has better quality and reproducibility and can be used for the separation of basic solutes efficiently.

  12. A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors

    International Nuclear Information System (INIS)

    Jung, T.S.; Guckel, H.; Seefeldt, J.; Ott, G.; Ahn, Y.C.

    1994-01-01

    In this paper, an integrated charge preamplifier to be used with small (10--30 mm 2 ) Si(Li) and Ge(Li) X-ray detectors is described. The preamplifier is designed to operate at cryogenic temperatures (∼100 K to 160 K) for the best performance. An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistors at the same current. Results for integrated amplifier are discussed

  13. Highly conductive p-type amorphous oxides from low-temperature solution processing

    International Nuclear Information System (INIS)

    Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-01-01

    We report solution-processed, highly conductive (resistivity 1.3-3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E VBM = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

  14. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    Science.gov (United States)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  15. Multi-channel data acquisition and processing system for moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Jin Ge; Yang Yanming

    1987-01-01

    A multi-channel data acquisition and processing system for moessbauer spectroscopy is described, which consists of an intelligent interface and a BC3-80 microcomputer. The system has eight data channels, each channel contains a counting circuit and a memory. A Z80-CPU is used as a main unit for control and access. The microcomputer is used for real-time displaying spectrum, saving the data to disk, printing data and data processing. The system is applicable to a high counting rate multi-wire proportional chamber. It can increase greatly the counting rate for measuring moessbauer spectrum. The signals of each wire in the chamber go through a corresponding amplifier and a differential discriminator and are recorded by a corresponding data channel, the data of each channel is added by the microcomputer. In addition, two channels can be used to measure an absorption and a scattering spectrum at the same time and the internal and the surface information of the sample are obtained simultaneously

  16. Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kyaw, L. M., E-mail: a0048661@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Bera, L. K.; Dolmanan, S. B.; Tan, H. R.; Bhat, T. N.; Tripathy, S., E-mail: tripathy-sudhiranjan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Liu, Y.; Bera, M. K.; Singh, S. P.; Chor, E. F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-08-18

    Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors (HEMTs) fabricated on a 200 mm diameter Si(111) substrate. In particular, RuO{sub x}-based gate is used due to the semitransparent nature to the optical excitation wavelengths, thus allowing much accurate thermal investigations underneath the gate. To determine the channel temperature profile in devices subjected to different electrical bias voltages, the GaN band-edge PL peak shift calibration with respect to temperature is used. PL analyses show a maximum channel temperature up to 435 K underneath the gate edge between gate and drain, where the estimated thermal resistance in such a HEMT structure is about 13.7 KmmW{sup −1} at a power dissipation of ∼10 W/mm. The temperature profiles from micro-Raman measurements are also addressed from the E{sub 2}-high optical phonon peak shift of GaN, and this method also probes the temperature-induced peak shifts of optical phonon from Si thus showing the nature of thermal characteristics at the AlN/Si substrate interface.

  17. Multi-channel logical circuit module used for high-speed, low amplitude signals processing and QDC gate signals generation

    International Nuclear Information System (INIS)

    Su Hong; Li Xiaogang; Zhu Haidong; Ma Xiaoli; Yin Weiwei; Li Zhuyu; Jin Genming; Wu Heyu

    2001-01-01

    A new kind of logical circuit will be introduced in brief. There are 16 independent channels in the module. The module receives low amplitude signals(≥40 mV), and processes them to amplify, shape, delay, sum and etc. After the processing each channel produces 2 pairs of ECL logical signal to feed the gate of QDC as the gate signal of QDC. The module consists of high-speed preamplifier unit, high-speed discriminate unit, delaying and shaping unit, summing unit and trigger display unit. The module is developed for 64 CH. 12 BIT Multi-event QDC. The impedance of QDC is 110 Ω. Each gate signal of QDC requires a pair of differential ECL level, Min. Gate width 30 ns and Max. Gate width 1 μs. It has showed that the outputs of logical circuit module satisfy the QDC requirements in experiment. The module can be used on data acquisition system to acquire thousands of data at high-speed ,high-density and multi-parameter, in heavy particle nuclear physics experiment. It also can be used to discriminate multi-coincidence events

  18. The Topographic Design of River Channels for Form-Process Linkages.

    Science.gov (United States)

    Brown, Rocko A; Pasternack, Gregory B; Lin, Tin

    2016-04-01

    Scientists and engineers design river topography for a wide variety of uses, such as experimentation, site remediation, dam mitigation, flood management, and river restoration. A recent advancement has been the notion of topographical design to yield specific fluvial mechanisms in conjunction with natural or environmental flow releases. For example, the flow convergence routing mechanism, whereby shear stress and spatially convergent flow migrate or jump from the topographic high (riffle) to the low point (pool) from low to high discharge, is thought to be a key process able to maintain undular relief in gravel bedded rivers. This paper develops an approach to creating riffle-pool topography with a form-process linkage to the flow convergence routing mechanism using an adjustable, quasi equilibrium synthetic channel model. The link from form to process is made through conceptualizing form-process relationships for riffle-pool couplets into geomorphic covariance structures (GCSs) that are then quantitatively embedded in a synthetic channel model. Herein, GCSs were used to parameterize a geometric model to create five straight, synthetic river channels with varying combinations of bed and width undulations. Shear stress and flow direction predictions from 2D hydrodynamic modeling were used to determine if scenarios recreated aspects of the flow convergence routing mechanism. Results show that the creation of riffle-pool couplets that experience flow convergence in straight channels requires GCSs with covarying bed and width undulations in their topography as supported in the literature. This shows that GCSs are a useful way to translate conceptualizations of form-process linkages into quantitative models of channel form.

  19. Electron-rich anthracene semiconductors containing triarylamine for solution-processed small-molecule organic solar cells.

    Science.gov (United States)

    Choi, Hyeju; Ko, Haye Min; Cho, Nara; Song, Kihyung; Lee, Jae Kwan; Ko, Jaejung

    2012-10-01

    New electron-rich anthracene derivatives containing triarylamine hole stabilizers, 2,6-bis[5,5'-bis(N,N'-diphenylaniline)-2,2'-bithiophen-5-yl]-9,10-bis-[(triisopropylsilyl)ethynyl]anthracene (TIPSAntBT-TPA) and 2,6-bis(5,5'-bis{4-[bis(9,9-dimethyl-9H-fluoren-2-yl)amino]phenyl}-2,2'-bithiophen-5-yl)-9,10-bis-[(triisopropylsilyl)ethynyl]anthracene (TIPSAntBT-bisDMFA), linked with π-conjugated bithiophene bridges, were synthesized and their photovoltaic characteristics were investigated in solution-processed small-molecule organic solar cells (SMOSCs). These new materials exhibited superior intramolecular charge transfer from triarylamine to anthracene, leading to a more electron-rich anthracene core that facilitated electron transfer into phenyl-C(61)-butyric acid methyl ester. Compared with TIPSAntBT and triarylamine, these materials show a threefold improvement in hole-transporting properties and better photovoltaic performance in solution-processed SMOSCs, with the best power conversion efficiency being 2.96 % at a high open-circuit voltage of 0.85 V. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Effect of Flow Channel Shape on Performance in Reverse Electrodialysis

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Kilsung [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Deok Han; Kim, Daejoong [Sogang Univ., Seoul (Korea, Republic of)

    2017-05-15

    Reverse electrodialysis (RED), which generates electrical energy from the difference in concentration of two solutions, has been actively studied owing to its high potential and the increased interest in renewable energy resulting from the Paris Agreement on climate change. For RED commercialization, its power density needs to be maximized, and therefore various methods have been discussed. In this paper, the power density was measured using various flow shapes based on the aspect ratio, opening ratio, and number of distribution channels. We found that the power density is enhanced with a decrease in the aspect ratio and an increase in the opening ratio and number of distribution channels.

  1. On-line calibration of process instrumentation channels in nuclear power plants

    Energy Technology Data Exchange (ETDEWEB)

    Hashemian, H.M.; Farmer, J.P. [Analysis and Measurement Services Corp., Knoxville, TN (United States)

    1995-04-01

    An on-line instrumentation monitoring system was developed and validated for use in nuclear power plants. This system continuously monitors the calibration status of instrument channels and determines whether or not they require manual calibrations. This is accomplished by comparing the output of each instrument channel to an estimate of the process it is monitoring. If the deviation of the instrument channel from the process estimate is greater than an allowable limit, then the instrument is said to be {open_quotes}out of calibration{close_quotes} and manual adjustments are made to correct the calibration. The success of the on-line monitoring system depends on the accuracy of the process estimation. The system described in this paper incorporates both simple intercomparison techniques as well as analytical approaches in the form of data-driven empirical modeling to estimate the process. On-line testing of the calibration of process instrumentation channels will reduce the number of manual calibrations currently performed, thereby reducing both costs to utilities and radiation exposure to plant personnel.

  2. Effect of stochastic gating on channel-facilitated transport of non-interacting and strongly repelling solutes

    Science.gov (United States)

    Berezhkovskii, Alexander M.; Bezrukov, Sergey M.

    2017-08-01

    Ligand- or voltage-driven stochastic gating—the structural rearrangements by which the channel switches between its open and closed states—is a fundamental property of biological membrane channels. Gating underlies the channel's ability to respond to different stimuli and, therefore, to be functionally regulated by the changing environment. The accepted understanding of the gating effect on the solute flux through the channel is that the mean flux is the product of the flux through the open channel and the probability of finding the channel in the open state. Here, using a diffusion model of channel-facilitated transport, we show that this is true only when the gating is much slower than the dynamics of solute translocation through the channel. If this condition breaks, the mean flux could differ from this simple estimate by orders of magnitude.

  3. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

    KAUST Repository

    Mejia, Israel I.; Salas Villaseñ or, Ana L.; Cha, Dong Kyu; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

    2013-01-01

    We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

  4. High-Level Design Space and Flexibility Exploration for Adaptive, Energy-Efficient WCDMA Channel Estimation Architectures

    Directory of Open Access Journals (Sweden)

    Zoltán Endre Rákossy

    2012-01-01

    Full Text Available Due to the fast changing wireless communication standards coupled with strict performance constraints, the demand for flexible yet high-performance architectures is increasing. To tackle the flexibility requirement, software-defined radio (SDR is emerging as an obvious solution, where the underlying hardware implementation is tuned via software layers to the varied standards depending on power-performance and quality requirements leading to adaptable, cognitive radio. In this paper, we conduct a case study for representatives of two complexity classes of WCDMA channel estimation algorithms and explore the effect of flexibility on energy efficiency using different implementation options. Furthermore, we propose new design guidelines for both highly specialized architectures and highly flexible architectures using high-level synthesis, to enable the required performance and flexibility to support multiple applications. Our experiments with various design points show that the resulting architectures meet the performance constraints of WCDMA and a wide range of options are offered for tuning such architectures depending on power/performance/area constraints of SDR.

  5. Secondary flows in the cooling channels of the high-performance light-water reactor

    Energy Technology Data Exchange (ETDEWEB)

    Laurien, E.; Wintterle, Th. [Stuttgart Univ., Institute for Nuclear Technolgy and Energy Systems (IKE) (Germany)

    2007-07-01

    The new design of a High-Performance Light-Water Reactor (HPLWR) involves a three-pass core with an evaporator region, where the compressed water is heated above the pseudo-critical temperature, and two superheater regions. Due to the strong dependency of the supercritical water density on the temperature significant mass transfer between neighboring cooling channels is expected if the temperature is unevenly distributed across the fuel element. An inter-channel flow is then superimposed to the secondary flow vortices induced by the non-isotropy of turbulence. In order to gain insight into the resulting flow patterns as well as into temperature and density distributions within the various subchannels of the fuel element CFD (Computational Fluid Dynamics) calculations for the 1/8 fuel element are performed. For simplicity adiabatic boundary conditions at the moderator box and the fuel element box are assumed. Our investigation confirms earlier results obtained by subchannel analysis that the axial mass flux is significantly reduced in the corner subchannel of this fuel element resulting in a net mass flux towards the neighboring subchannels. Our results provide a first estimation of the magnitude of the secondary flows in the pseudo-critical region of a supercritical light-water reactor. Furthermore, it is demonstrated that CFD is an efficient tool for investigations of flow patterns within nuclear reactor fuel elements. (authors)

  6. High-resolution Fourier-transform extreme ultraviolet photoabsorption spectroscopy of 14N15N

    Science.gov (United States)

    Heays, A. N.; Dickenson, G. D.; Salumbides, E. J.; de Oliveira, N.; Joyeux, D.; Nahon, L.; Lewis, B. R.; Ubachs, W.

    2011-12-01

    The first comprehensive high-resolution photoabsorption spectrum of 14N15N has been recorded using the Fourier-transform spectrometer attached to the Desirs beamline at the Soleil synchrotron. Observations are made in the extreme ultraviolet and span 100 000-109 000 cm-1 (100-91.7 nm). The observed absorption lines have been assigned to 25 bands and reduced to a set of transition energies, f values, and linewidths. This analysis has verified the predictions of a theoretical model of N2 that simulates its photoabsorption and photodissociation cross section by solution of an isotopomer independent formulation of the coupled-channel Schrödinger equation. The mass dependence of predissociation linewidths and oscillator strengths is clearly evident and many local perturbations of transition energies, strengths, and widths within individual rotational series have been observed.

  7. THESEE-3, Orgel Reactor Performance and Statistic Hot Channel Factors

    International Nuclear Information System (INIS)

    Chambaud, B.

    1974-01-01

    1 - Nature of physical problem solved: The code applies to a heavy-water moderated organic-cooled reactor channel. Different fuel cluster models can be used (circular or hexagonal patterns). The code gives coolant temperatures and velocities and cladding temperatures throughout the channel and also channel performances, such as power, outlet temperature, boiling and burn-out safety margins (see THESEE-1). In a further step, calculations are performed with statistical values obtained by random retrieval of geometrical in- put data and taking into account construction tolerances, vibrations, etc. The code evaluates the mean value and standard deviation for the more important thermal and hydraulic parameters. 2 - Method of solution: First step calculations are performed for nominal values of parameters by solving iteratively the non-linear system of equations which give the pressure drops in subchannels of the current zone (see THESEE-1). Then a Gaussian probability distribution of possible statistical values of the geometrical input data is assumed. A random number generation routine determines the statistical case. Calculations are performed in the same way as for the nominal case. In the case of several channels, statistical performances must be adjusted to equalize the normal pressure drop. A special subroutine (AVERAGE) then determines the mean value and standard deviation, and thus probability functions of the most significant thermal and hydraulic results. 3 - Restrictions on the complexity of the problem: Maximum 7 fuel clusters, each divided into 10 axial zones. Fuel bundle geometries are restricted to the following models - circular pattern 6/7, 18/19, 36/67 rods, with or without fillers. The fuel temperature distribution is not studied. The probability distribution of the statistical input is assumed to be a Gaussian function. The principle of random retrieval of statistical values is correct, but some additional correlations could be found from a more

  8. Operating performance and reliability of CANDU PHWR fuel channels in Canada

    International Nuclear Information System (INIS)

    Strachan, B.; Brown, D.R.

    1983-03-01

    CANDU nuclear plants use many small-diameter high-pressure fuel channels. Good operating performance from the CANDU fuel channels has made a major contribution to the world-leading operating record of the CANDU nuclear power plants. As of 1982 December 31, there were 7,480 fuel channels installed in 18 CANDU reactors over 500 MW(e) in size. Eight of these reactors have been declared in-service and have accumulated 24,000 fuel channel-years of operation. The only significant operating problems with fuel channels have been the occurrence of leaking cracks in 70 fuel channels and a larger amount of axial creep on the early reactors than was originally provided for in the design. Both of these problems have been corrected on all CANDU reactors built since the Bruce GS 'A' station and the newer reactors should exhibit even better performance

  9. Design and fabrication of ZnO/TiO2-based thin-film inverter circuits using solution processing techniques

    International Nuclear Information System (INIS)

    Liau, Leo Chau-Kuang; Kuo, Juo-Wei; Chiang, Hsin-Ni

    2012-01-01

    Novel and cost-effective ceramic-based thin-film inverter circuits, based on two layers of TiO 2 and ZnO films to construct junction field-effect transistors (FETs), were designed and fabricated by solution coating techniques. The double layers of the sol–gel ZnO and TiO 2 films were coated and characterized as a diode according to the current–voltage performance. Two types of FETs, the p-channel (p-FET) and the n-channel (n-FET) devices, were produced using different coating sequences of ZnO and TiO 2 layers. Both of the transistor performances were evaluated by analyzing the source–drain current versus voltage (I ds –V ds ) data with the control of the gate voltage (V g ). The ZnO/TiO 2 -based inverter circuits, such as the complementary-FET device, were further fabricated using the integration of the p-FET and the n-FET. The voltage transfer characteristics of the inverters were estimated by the tests of the input voltage (V in ) versus the output voltage (V out ) for the thin-film inverter circuits. (paper)

  10. Sediment control - an appropriate solution for small irrigation channels

    International Nuclear Information System (INIS)

    Shoag, M.A.

    2002-01-01

    Sediment control is one of the key factors considered prior to the design of an irrigation channel. When the channel takes off from its headworks, its slope is usually smaller than that of the parent stream to obtain required head. If the sediment load is heavy then the channel can not maintain equilibrium since the high influx can not be transported fully due to its small gradient. This results in the deposition of part incoming sediment in the channel itself. A typical irrigation intake suitable for small schemes, which consists of a simple settling basin with double orifice: one at the inlet from the river and the other at the outlet to the canal. The basin is provided with a side spill weir near its downstream end, to discharge flows in excess of the maximum canal capacity. This paper deals with the experimental study of such an arrangement. Different flows were run covering a range of levels in the river, from minimum to flood flows to check the hydraulic performance of the layout and in particular to study its effectiveness in settling sediment at low flows and avoiding excessive sediment input to the canal during flood. (author)

  11. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

    2016-01-01

    A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

  12. Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

    International Nuclear Information System (INIS)

    Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G.; Thalhammer, Stefan; Howgate, John; Sharp, Ian D.; Stutzmann, Martin

    2010-01-01

    We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the μGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

  13. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    KAUST Repository

    Hanna, Amir

    2014-06-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.

  14. Performance Analysis of Amplify-and-Forward Two-Way Relaying with Co-Channel Interference and Channel Estimation Error

    KAUST Repository

    Liang Yang,

    2013-06-01

    In this paper, we consider the performance of a two-way amplify-and-forward relaying network (AF TWRN) in the presence of unequal power co-channel interferers (CCI). Specifically, we first consider AF TWRN with an interference-limited relay and two noisy-nodes with channel estimation errors and CCI. We derive the approximate signal-to-interference plus noise ratio expressions and then use them to evaluate the outage probability, error probability, and achievable rate. Subsequently, to investigate the joint effects of the channel estimation error and CCI on the system performance, we extend our analysis to a multiple-relay network and derive several asymptotic performance expressions. For comparison purposes, we also provide the analysis for the relay selection scheme under the total power constraint at the relays. For AF TWRN with channel estimation error and CCI, numerical results show that the performance of the relay selection scheme is not always better than that of the all-relay participating case. In particular, the relay selection scheme can improve the system performance in the case of high power levels at the sources and small powers at the relays.

  15. The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.

    Science.gov (United States)

    Wu, Chien-Hung; Huang, Bo-Wen; Chang, Kow-Ming; Wang, Shui-Jinn; Lin, Jian-Hong; Hsu, Jui-Mei

    2016-06-01

    The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μ(FET)) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I(on)/I(off)) of 1.49 x 10(7).

  16. High Power Efficiency Solution-Processed Blue Phosphorescent Organic Light-Emitting Diodes Using Exciplex-Type Host with a Turn-on Voltage Approaching the Theoretical Limit.

    Science.gov (United States)

    Ban, Xinxin; Sun, Kaiyong; Sun, Yueming; Huang, Bin; Ye, Shanghui; Yang, Min; Jiang, Wei

    2015-11-18

    Three solution-processable exciplex-type host materials were successfully designed and characterized by equal molar blending hole transporting molecules with a newly synthesized electron transporting material, which possesses high thermal stability and good film-forming ability through a spin-coating technique. The excited-state dynamics and the structure-property relationships were systematically investigated. By gradually deepening the highest occupied molecular orbital (HOMO) level of electron-donating components, the triplet energy of exciplex hosts were increased from 2.64 to 3.10 eV. Low temperature phosphorescence spectra demonstrated that the excessively high triplet energy of exciplex would induce a serious energy leakage from the complex state to the constituting molecule. Furthermore, the low energy electromer state, which only exists under the electroexcitation, was found as another possible channel for energy loss in exciplex-based phosphorescent organic light-emitting diodes (OLEDs). In particular, as quenching of the exciplex-state and the triplet exciton were largely eliminated, solution-processed blue phosphorescence OLEDs using the exciplex-type host achieved an extremely low turn-on voltage of 2.7 eV and record-high power efficiency of 22.5 lm W(-1), which were among the highest values in the devices with identical structure.

  17. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Kwon, Sung-Joo; Han, Tae-Hee; Kim, Young-Hoon; Ahmed, Towfiq; Seo, Hong-Kyu; Kim, Hobeom; Kim, Dong Jin; Xu, Wentao; Hong, Byung Hee; Zhu, Jian-Xin; Lee, Tae-Woo

    2018-02-07

    n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ∼0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (∼13.8 cd/A) than did inverted PLEDs with pristine graphene (∼2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

  18. Highly efficient red phosphorescent organic light-emitting diodes based on solution processed emissive layer

    International Nuclear Information System (INIS)

    Liu, Baiquan; Xu, Miao; Tao, Hong; Ying, Lei; Zou, Jianhua; Wu, Hongbin; Peng, Junbiao

    2013-01-01

    Highly efficient red phosphorescent organic polymer light-emitting diodes (PhOLEDs) were fabricated based on a solution-processed small-molecule host 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) by doping an iridium complex, tris(1-(2,6-dimethylphenoxy)-4-(4-chlorophenyl)phthalazine)iridium (III) (Ir(MPCPPZ) 3 ). A hole blocking layer 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBI) with a function of electron transport was thermally deposited onto the top of CBP layer. The diode with the structure of ITO/PEDOT:PSS (50 nm)/CBP:Ir(MPCPPZ) 3 (55 nm)/TPBI (30 nm)/Ba (4 nm)/Al (120 nm) showed an external quantum efficiency (QE ext ) of 19.3% and luminous efficiency (LE) of 18.3 cd/A at a current density of 0.16 mA/cm 2 , and Commission International de I'Eclairage (CIE) coordinates of (0.607, 0.375). It was suggested that the diodes using TPBI layer exhibited nearly 100% internal quantum efficiency and one order magnitude enhanced LE or QE ext efficiencies. -- Highlights: • Efficient red PhOLEDs based on a solution-processed small-molecule host were fabricated. • By altering volume ratio of chloroform/chlorobenzene solvent, we got best film quality of CBP. • EQE of the diode was 19.3%, indicating nearly 100% internal quantum yield was achieved

  19. Performance study of ultrafiltration membrane with bovine serum albumin as feed solution

    International Nuclear Information System (INIS)

    Syahril Ahmad

    2009-01-01

    Bovine serum albumin solutions at different temperature, pH, flow rate and operation pressure have been used as feed solution for studying performance of ultrafiltration membrane. Polysulfone membranes used for this experiment were in form of hollow fibers that have Molecular Weight Cut Off (MWCO) 60 kDa. Observation was focused on flux parameter and rejection coefficient towards protein during the process. Result shows that temperature, pH of BSA feed solution, flow rate and operation pressure can affect the flux and rejection coefficient of membrane. High temperature feed solution tend to decrease the flux but increase rejection coefficient. Rejection coefficient of membrane will increase while flux decreasing at pH of feed solution near to protein isoelectric point. High pressure of feed solution will increase flux but decrease rejection of membrane. Rejection of membrane will decrease and flux will increase when the process operated in slow flow rate. (author)

  20. eICIC functionality and performance for LTE HetNet co-channel deployments

    DEFF Research Database (Denmark)

    Pedersen, Klaus Ingemann; Wang, Yuanye; Soret, Beatriz

    2012-01-01

    . The network controlled time-domain enhanced inter-cell interference coordination (eICIC) concept is outlined by explaining the benefits and characteristics of this solution. Extensive system level performance results are presented with bursty and non-bursty traffic to demonstrate the eICIC concepts ability......Different technical solutions are enabling the move from macro-only scenarios towards heterogeneous networks with a mixture of different base station types. In this paper we focus on multi-layer LTE-Advanced networks, and especially address aspects related to co-channel interference management...... to dynamically adapt according to the traffic conditions....

  1. Planck 2013 results. VI. High Frequency Instrument data processing

    CERN Document Server

    Ade, P.A.R.; Armitage-Caplan, C.; Arnaud, M.; Ashdown, M.; Atrio-Barandela, F.; Aumont, J.; Baccigalupi, C.; Banday, A.J.; Barreiro, R.B.; Battaner, E.; Benabed, K.; Benoît, A.; Benoit-Lévy, A.; Bernard, J. -P.; Bersanelli, M.; Bielewicz, P.; Bobin, J.; Bock, J.J.; Bond, J.R.; Borrill, J.; Bouchet, F.R.; Boulanger, F.; Bowyer, J.W.; Bridges, M.; Bucher, M.; Burigana, C.; Cardoso, J. -F.; Catalano, A.; Chamballu, A.; Chary, R. -R.; Chen, X.; Chiang, L. -Y; Chiang, H.C.; Christensen, P.R.; Church, S.; Clements, D.L.; Colombi, S.; Colombo, L.P.L.; Combet, C.; Couchot, F.; Coulais, A.; Crill, B.P.; Curto, A.; Cuttaia, F.; Danese, L.; Davies, R.D.; Davis, R.J.; de Bernardis, P.; de Rosa, A.; de Zotti, G.; Delabrouille, J.; Delouis, J. -M.; Désert, F. -X.; Dickinson, C.; Diego, J.M.; Dole, H.; Donzelli, S.; Doré, O.; Douspis, M.; Dunkley, J.; Dupac, X.; Efstathiou, G.; Enßlin, T.A.; Eriksen, H.K.; Finelli, F.; Forni, O.; Frailis, M.; Fraisse, A.A.; Franceschi, E.; Galeotta, S.; Ganga, K.; Giard, M.; Giardino, G.; Girard, D.; Giraud-Héraud, Y.; González-Nuevo, J.; Górski, K.M.; Gratton, S.; Gregorio, A.; Gruppuso, A.; Gudmundsson, J.E.; Hansen, F.K.; Hanson, D.; Harrison, D.; Helou, G.; Henrot-Versillé, S.; Herent, O.; Hernández-Monteagudo, C.; Herranz, D.; Hildebrandt, S.R.; Hivon, E.; Hobson, M.; Holmes, W.A.; Hornstrup, A.; Hou, Z.; Hovest, W.; Huffenberger, K.M.; Hurier, G.; Jaffe, T.R.; Jaffe, A.H.; Jones, W.C.; Juvela, M.; Keihänen, E.; Keskitalo, R.; Kisner, T.S.; Kneissl, R.; Knoche, J.; Knox, L.; Kunz, M.; Kurki-Suonio, H.; Lagache, G.; Lamarre, J. -M.; Lasenby, A.; Laureijs, R.J.; Lawrence, C.R.; Jeune, M. Le; Leonardi, R.; Leroy, C.; Lesgourgues, J.; Liguori, M.; Lilje, P.B.; Linden-Vørnle, M.; López-Caniego, M.; Lubin, P.M.; Macías-Pérez, J.F.; MacTavish, C.J.; Maffei, B.; Mandolesi, N.; Maris, M.; Marshall, D.J.; Martin, P.G.; Martínez-González, E.; Masi, S.; Matarrese, S.; Matthai, F.; Mazzotta, P.; McGehee, P.; Meinhold, P.R.; Melchiorri, A.; Mendes, L.; Mennella, A.; Migliaccio, M.; Mitra, S.; Miville-Deschênes, M. -A.; Moneti, A.; Montier, L.; Morgante, G.; Mortlock, D.; Mottet, S.; Munshi, D.; Naselsky, P.; Nati, F.; Natoli, P.; Netterfield, C.B.; Nørgaard-Nielsen, H.U.; North, C.; Noviello, F.; Novikov, D.; Novikov, I.; Orieux, F.; Osborne, S.; Oxborrow, C.A.; Paci, F.; Pagano, L.; Pajot, F.; Paladini, R.; Paoletti, D.; Pasian, F.; Patanchon, G.; Perdereau, O.; Perotto, L.; Perrotta, F.; Piacentini, F.; Piat, M.; Pierpaoli, E.; Pietrobon, D.; Plaszczynski, S.; Pointecouteau, E.; Polenta, G.; Ponthieu, N.; Popa, L.; Poutanen, T.; Pratt, G.W.; Prézeau, G.; Prunet, S.; Puget, J. -L.; Rachen, J.P.; Racine, B.; Reach, W.T.; Rebolo, R.; Reinecke, M.; Remazeilles, M.; Renault, C.; Ricciardi, S.; Riller, T.; Ristorcelli, I.; Rocha, G.; Rosset, C.; Roudier, G.; Rowan-Robinson, M.; Rusholme, B.; Sanselme, L.; Santos, D.; Sauvé, A.; Savini, G.; Shellard, E.P.S.; Spencer, L.D.; Starck, J. -L.; Stolyarov, V.; Stompor, R.; Sudiwala, R.; Sureau, F.; Sutton, D.; Suur-Uski, A. -S.; Sygnet, J. -F.; Tauber, J.A.; Tavagnacco, D.; Techene, S.; Terenzi, L.; Tomasi, M.; Tristram, M.; Tucci, M.; Umana, G.; Valenziano, L.; Valiviita, J.; Van Tent, B.; Vibert, L.; Vielva, P.; Villa, F.; Vittorio, N.; Wade, L.A.; Wandelt, B.D.; White, S.D.M.; Yvon, D.; Zacchei, A.; Zonca, A.

    2014-01-01

    We describe the processing of the 531 billion raw data samples from the High Frequency Instrument (hereafter HFI), which we performed to produce six temperature maps from the first 473 days of Planck-HFI survey data. These maps provide an accurate rendition of the sky emission at 100, 143, 217, 353, 545, and 857 GHz with an angular resolution ranging from 9.7 to 4.6 arcmin. The detector noise per (effective) beam solid angle is respectively, 10, 6, 12 and 39 microKelvin in HFI four lowest frequency channel (100--353 GHz) and 13 and 14 kJy/sr for the 545 and 857 GHz channels. Using the 143 GHz channel as a reference, these two high frequency channels are intercalibrated within 5% and the 353 GHz relative calibration is at the percent level. The 100 and 217 GHz channels, which together with the 143 GHz channel determine the high-multipole part of the CMB power spectrum (50 < l <2500), are intercalibrated at better than 0.2 %.

  2. Progress in a novel architecture for high performance processing

    Science.gov (United States)

    Zhang, Zhiwei; Liu, Meng; Liu, Zijun; Du, Xueliang; Xie, Shaolin; Ma, Hong; Ding, Guangxin; Ren, Weili; Zhou, Fabiao; Sun, Wenqin; Wang, Huijuan; Wang, Donglin

    2018-04-01

    The high performance processing (HPP) is an innovative architecture which targets on high performance computing with excellent power efficiency and computing performance. It is suitable for data intensive applications like supercomputing, machine learning and wireless communication. An example chip with four application-specific integrated circuit (ASIC) cores which is the first generation of HPP cores has been taped out successfully under Taiwan Semiconductor Manufacturing Company (TSMC) 40 nm low power process. The innovative architecture shows great energy efficiency over the traditional central processing unit (CPU) and general-purpose computing on graphics processing units (GPGPU). Compared with MaPU, HPP has made great improvement in architecture. The chip with 32 HPP cores is being developed under TSMC 16 nm field effect transistor (FFC) technology process and is planed to use commercially. The peak performance of this chip can reach 4.3 teraFLOPS (TFLOPS) and its power efficiency is up to 89.5 gigaFLOPS per watt (GFLOPS/W).

  3. Optical signal processing for enabling high-speed, highly spectrally efficient and high capacity optical systems

    Science.gov (United States)

    Fazal, Muhammad Irfan

    may be possible. Recently, interest has increased in exploring the spatial dimension of light to increase capacity, both in fiber as well as free-space communication channels. The orbital angular momentum (OAM) of light, carried by Laguerre-Gaussian (LG) beams have the interesting property that, in theory, an infinite number of OAMs can be transmitted; which due to its inherent orthogonality will not affect each other. Thus, in theory, one can increase the channel capacity arbitrarily. However, in practice, the device dimensions will reduce the number of OAMs used. In addition to advanced modulation formats, it is expected that optical signal processing may play a role in the future development of more efficient optical transmission systems. The hope is that performing signal processing in the optical domain may reduce optical-to-electronic conversion inefficiencies, eliminate bottlenecks and take advantage of the ultrahigh bandwidth inherent in optics. While 40 to 50 Gbit/s electronic components are the peak of commercial technology and 100 Gbit/s capable RF components are still in their infancy, optical signal processing of these high-speed data signals may provide a potential solution. Furthermore, any optical processing system or sub-system must be capable of handling the wide array of data formats and data rates that networks may employ. The work presented in this Ph.D. dissertation attempts at addressing the issue of optical processing for advanced optical modulation formats, and particularly explores the state of the art in increasing the capacity of an optical link by a combination of wavelength/phase/polarization/OAM dimensions of light. Spatial multiplexing and demultiplexing of both coherently and directly detected signals at the 100 Gbit/s Ethernet standard is addressed. The application of a continuously tunable all-optical delay for all-optical functionality like time-slot interchange at high data-rates is presented. Moreover the interplay of chirp

  4. Purification of charybdotoxine, a specific inhibitor of the high-conductance Ca2+-activated K+ channel

    International Nuclear Information System (INIS)

    Smith, C.; Phillips, M.; Miller, C.

    1986-01-01

    Charybdotoxim is a high-affinity specific inhibitor of the high-conductance Ca 2+ -activated K + channel found in the plasma membranes of many vertebrate cell types. Using Ca 2+ -activated K + channels reconstituted into planar lipid bilayer membranes as an assay, the authors have purified the toxin from the venom of the scorpion Leiurus quinquestriatus by a two-step procedure involving chromatofocusing on SP-Sephadex, followed by reversed-phase high-performance liquid chromatography. Charybdotoxin is shown to be a highly basic protein with a mass of 10 kDa. Under the standard assay conditions, the purified toxin inhibits the Ca 2+ -activated K + channel with an apparent dissociation constant of 3.5 nM. The protein is unusually stable, with inhibitory potency being insensitive to boiling or exposure to organic solvents. The toxin's activity is sensitive to chymotrypsin treatment and to acylation of lysine groups. The protein may be radioiodinated without loss of activity

  5. Effect of solution processed and thermally evaporated interlayers on the performance of backgrated polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jayawardena, K.D.G.I.; Amarasinghe, K.M.P.; Nismy, N.A. [Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford GU2 7XH (United Kingdom); Mills, C.A. [Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford GU2 7XH (United Kingdom); Advanced Coatings Group, Surface Engineering Department, Tata Steel Research Development and Technology, Swinden Technology Centre, Rotherham, S60 3AR (United Kingdom); Silva, S.R.P., E-mail: s.silva@surrey.ac.uk [Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2015-09-30

    Polymer solar cells are fast gaining momentum as a potential solution towards low cost sustainable energy generation. However, the performance of architectures is known to be limited by the thin film nature of the active layer which, although required due to low charge carrier mobilities, limits the optical coupling to the active layer. The formation of periodic backgratings has been proposed as a solution to this problem. Here, we investigate the effect of solution processed and thermally evaporated interlayers on the performance of backgrated polymer solar cells. Analysis of device performance under standard conditions indicates higher power conversion efficiencies with the incorporation of the evaporated interlayer (5.7%) over a sol–gel processed interlayer (4.9%). This is driven by a more conformal coating as evidenced through two orders of magnitude higher electron mobilities (10{sup −5} versus 10{sup −7} cm{sup 2} V{sup −1} s{sup −1}) as well as the balanced electron and hole transport observed for the former architecture. It is believed that these results will catalyse further development of such device engineering concepts for improved optical coupling in thin film photovoltaics. - Highlights: • Effect of interlayers on backgrated photovoltaic devices is tested. • Evaporated interlayers lead to better device performance. • Better charge extraction is observed for evaporated interlayers.

  6. Solution-processed core-shell nanowires for efficient photovoltaic cells.

    Science.gov (United States)

    Tang, Jinyao; Huo, Ziyang; Brittman, Sarah; Gao, Hanwei; Yang, Peidong

    2011-08-21

    Semiconductor nanowires are promising for photovoltaic applications, but, so far, nanowire-based solar cells have had lower efficiencies than planar cells made from the same materials, even allowing for the generally lower light absorption of nanowires. It is not clear, therefore, if the benefits of the nanowire structure, including better charge collection and transport and the possibility of enhanced absorption through light trapping, can outweigh the reductions in performance caused by recombination at the surface of the nanowires and at p-n junctions. Here, we fabricate core-shell nanowire solar cells with open-circuit voltage and fill factor values superior to those reported for equivalent planar cells, and an energy conversion efficiency of ∼5.4%, which is comparable to that of equivalent planar cells despite low light absorption levels. The device is made using a low-temperature solution-based cation exchange reaction that creates a heteroepitaxial junction between a single-crystalline CdS core and single-crystalline Cu2S shell. We integrate multiple cells on single nanowires in both series and parallel configurations for high output voltages and currents, respectively. The ability to produce efficient nanowire-based solar cells with a solution-based process and Earth-abundant elements could significantly reduce fabrication costs relative to existing high-temperature bulk material approaches.

  7. Analytic solution to verify code predictions of two-phase flow in a boiling water reactor core channel

    International Nuclear Information System (INIS)

    Chen, K.F.; Olson, C.A.

    1983-01-01

    One reliable method that can be used to verify the solution scheme of a computer code is to compare the code prediction to a simplified problem for which an analytic solution can be derived. An analytic solution for the axial pressure drop as a function of the flow was obtained for the simplified problem of homogeneous equilibrium two-phase flow in a vertical, heated channel with a cosine axial heat flux shape. This analytic solution was then used to verify the predictions of the CONDOR computer code, which is used to evaluate the thermal-hydraulic performance of boiling water reactors. The results show excellent agreement between the analytic solution and CONDOR prediction

  8. 3D Massive MIMO Systems: Channel Modeling and Performance Analysis

    KAUST Repository

    Nadeem, Qurrat-Ul-Ain

    2015-03-01

    Multiple-input-multiple-output (MIMO) systems of current LTE releases are capable of adaptation in the azimuth only. More recently, the trend is to enhance the system performance by exploiting the channel\\'s degrees of freedom in the elevation through the dynamic adaptation of the vertical antenna beam pattern. This necessitates the derivation and characterization of three-dimensional (3D) channels. Over the years, channel models have evolved to address the challenges of wireless communication technologies. In parallel to theoretical studies on channel modeling, many standardized channel models like COST-based models, 3GPP SCM, WINNER, ITU have emerged that act as references for industries and telecommunication companies to assess system-level and link-level performances of advanced signal processing techniques over real-like channels. Given the existing channels are only two dimensional (2D) in nature; a large effort in channel modeling is needed to study the impact of the channel component in the elevation direction. The first part of this work sheds light on the current 3GPP activity around 3D channel modeling and beamforming, an aspect that to our knowledge has not been extensively covered by a research publication. The standardized MIMO channel model is presented, that incorporates both the propagation effects of the environment and the radio effects of the antennas. In order to facilitate future studies on the use of 3D beamforming, the main features of the proposed 3D channel model are discussed. A brief overview of the future 3GPP 3D channel model being outlined for the next generation of wireless networks is also provided. In the subsequent part of this work, we present an information-theoretic channel model for MIMO systems that supports the elevation dimension. The model is based on the principle of maximum entropy, which enables us to determine the distribution of the channel matrix consistent with the prior information on the angles of departure and

  9. High aspect ratio channels in glass and porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, H.D. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Dang, Z.Y. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Wu, J.F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Kan, J.A. van; Qureshi, S. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Ynsa, M.D.; Torres-Costa, V. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Centro de Micro-Análisis de Materiales (CMAM), Universidad Autónoma de Madrid, Campus de Cantoblanco Edif. 22, Faraday 3, E-28049 Madrid (Spain); Maira, A. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Venkatesan, T.V. [Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Breese, M.B.H., E-mail: phymbhb@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2017-03-01

    We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

  10. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.

    Science.gov (United States)

    Sarangadharan, Indu; Regmi, Abiral; Chen, Yen-Wen; Hsu, Chen-Pin; Chen, Pei-Chi; Chang, Wen-Hsin; Lee, Geng-Yen; Chyi, Jen-Inn; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

    2018-02-15

    In this study, we report the development of a high sensitivity assay for the detection of cardiac troponin I using electrical double layer gated high field AlGaN/GaN HEMT biosensor. The unique gating mechanism overcomes the drawback of charge screening seen in traditional FET based biosensors, allowing detection of target proteins in physiological solutions without sample processing steps. Troponin I specific antibody and aptamer are used as receptors. The tests carried out using purified protein solution and clinical serum samples depict high sensitivity, specificity and wide dynamic range (0.006-148ng/mL). No additional wash or sample pre-treatment steps are required, which greatly simplifies the biosensor system. The miniaturized HEMT chip is packaged in a polymer substrate and easily integrated with a portable measurement unit, to carry out quantitative troponin I detection in serum samples with < 2µl sample volume in 5min. The integrated prototype biosensor unit demonstrates the potential of the method as a rapid, inexpensive, high sensitivity CVD biomarker assay. The highly simplified protocols and enhanced sensor performance make our biosensor an ideal choice for point of care diagnostics and personal healthcare systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-08-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

  13. Effects of structural modification via high-pressure annealing on solution-processed InGaO films and thin-film transistors

    International Nuclear Information System (INIS)

    Rim, You Seung; Choi, Hyung-Wook; Kim, Kyung Hwan; Kim, Hyun Jae

    2016-01-01

    We investigated the structural modification of solution-processed nanocrystalline InGaO films via high-pressure annealing and fabricated thin-film transistors. The grain size of InGaO films annealed in the presence of oxygen under high pressure was significantly changed compared the films annealed without high pressure ambient. The O1s XPS peak distribution of InGaO films annealed under high pressure at 350 °C showed a peak similar to that of the non-pressure annealed film at 500 °C. The high-pressure annealing process promoted the elimination of organic residues and dehydroxylation of the metal hydroxide (M–OH) complex. We confirmed the improved device performance of high-pressure annealed InGaO-based thin-film transistors owing to the reduction in charge-trap density. (paper)

  14. Wavy channel transistor for area efficient high performance operation

    KAUST Repository

    Fahad, Hossain M.; Hussain, Aftab M.; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device

  15. Highly Efficient 2D/3D Hybrid Perovskite Solar Cells via Low-Pressure Vapor-Assisted Solution Process.

    Science.gov (United States)

    Li, Ming-Hsien; Yeh, Hung-Hsiang; Chiang, Yu-Hsien; Jeng, U-Ser; Su, Chun-Jen; Shiu, Hung-Wei; Hsu, Yao-Jane; Kosugi, Nobuhiro; Ohigashi, Takuji; Chen, Yu-An; Shen, Po-Shen; Chen, Peter; Guo, Tzung-Fang

    2018-06-08

    The fabrication of multidimensional organometallic halide perovskite via a low-pressure vapor-assisted solution process is demonstrated for the first time. Phenyl ethyl-ammonium iodide (PEAI)-doped lead iodide (PbI 2 ) is first spin-coated onto the substrate and subsequently reacts with methyl-ammonium iodide (MAI) vapor in a low-pressure heating oven. The doping ratio of PEAI in MAI-vapor-treated perovskite has significant impact on the crystalline structure, surface morphology, grain size, UV-vis absorption and photoluminescence spectra, and the resultant device performance. Multiple photoluminescence spectra are observed in the perovskite film starting with high PEAI/PbI 2 ratio, which suggests the coexistence of low-dimensional perovskite (PEA 2 MA n -1 Pb n I 3 n +1 ) with various values of n after vapor reaction. The dimensionality of the as-fabricated perovskite film reveals an evolution from 2D, hybrid 2D/3D to 3D structure when the doping level of PEAI/PbI 2 ratio varies from 2 to 0. Scanning electron microscopy images and Kelvin probe force microscopy mapping show that the PEAI-containing perovskite grain is presumably formed around the MAPbI 3 perovskite grain to benefit MAPbI 3 grain growth. The device employing perovskite with PEAI/PbI 2 = 0.05 achieves a champion power conversion efficiency of 19.10% with an open-circuit voltage of 1.08 V, a current density of 21.91 mA cm -2 , and a remarkable fill factor of 80.36%. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. The effect of various solvents on the back channel of solution-processed In-Ga-Zn-O thin-film transistors intended for biosensor applications

    International Nuclear Information System (INIS)

    Kim, Si Joon; Jung, Joohye; Yoon, Doo Hyun; Kim, Hyun Jae

    2013-01-01

    This study investigated the effects of exposing solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs), intended for biosensor applications, to various solvents. Various solvents, such as the nonpolar solvent chlorobenzene and the polar solvents ethanol and deionized (DI) water, were dropped and adsorbed on exposed IGZO channel surfaces. All IGZO TFT devices exhibited a negative threshold voltage shift and a sub-threshold swing degradation, without an accompanying degradation in field-effect mobility. These variations depended on the dielectric constant of the solvents; with the exception of the IGZO TFT device exposed to DI water, they all gradually returned to their initial states.

  17. Mitigation Technique for Receiver Performance Variation of Multi-Color Channels in Visible Light Communication

    Directory of Open Access Journals (Sweden)

    Yeong Min Jang

    2011-06-01

    Full Text Available “Green” and energy-efficient wireless communication schemes have recently experienced rapid development and garnered much interest. One such scheme is visible light communication (VLC which is being touted as one of the next generation wireless communication systems. VLC allows communication using multi-color channels that provide high data rates and illumination simultaneously. Even though VLC has many advantageous features compared with RF technologies, including visibility, ubiquitousness, high speed, high security, harmlessness for the human body and freedom of RF interference, it suffers from some problems on the receiver side, one of them being photo sensitivity dissimilarity of the receiver. The photo sensitivity characteristics of a VLC receiver such as Si photo-detector depend on the wavelength variation. The performance of the VLC receiver is not uniform towards all channel colors, but it is desirable for receivers to have the same performance on each color channel. In this paper, we propose a mitigation technique for reducing the performance variation of the receiver on multi-color channels. We show received power, SNR, BER, output current, and outage probability in our simulation for different color channels. Simulation results show that, the proposed scheme can reduce the performance variation of the VLC receiver on multi-color channels.

  18. High Performance Building Facade Solutions - PIER Final Project Report

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Eleanor; Selkowitz, Stephen

    2009-12-31

    Building facades directly influence heating and cooling loads and indirectly influence lighting loads when daylighting is considered, and are therefore a major determinant of annual energy use and peak electric demand. Facades also significantly influence occupant comfort and satisfaction, making the design optimization challenge more complex than many other building systems.This work focused on addressing significant near-term opportunities to reduce energy use in California commercial building stock by a) targeting voluntary, design-based opportunities derived from the use of better design guidelines and tools, and b) developing and deploying more efficient glazings, shading systems, daylighting systems, facade systems and integrated controls. This two-year project, supported by the California Energy Commission PIER program and the US Department of Energy, initiated a collaborative effort between The Lawrence Berkeley National Laboratory (LBNL) and major stakeholders in the facades industry to develop, evaluate, and accelerate market deployment of emerging, high-performance, integrated facade solutions. The LBNL Windows Testbed Facility acted as the primary catalyst and mediator on both sides of the building industry supply-user business transaction by a) aiding component suppliers to create and optimize cost effective, integrated systems that work, and b) demonstrating and verifying to the owner, designer, and specifier community that these integrated systems reliably deliver required energy performance. An industry consortium was initiated amongst approximately seventy disparate stakeholders, who unlike the HVAC or lighting industry, has no single representative, multi-disciplinary body or organized means of communicating and collaborating. The consortium provided guidance on the project and more importantly, began to mutually work out and agree on the goals, criteria, and pathways needed to attain the ambitious net zero energy goals defined by California and

  19. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Science.gov (United States)

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  20. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

    International Nuclear Information System (INIS)

    Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

    2005-01-01

    We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

  1. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    International Nuclear Information System (INIS)

    Besleaga, C.; Stan, G.E.; Pintilie, I.; Barquinha, P.; Fortunato, E.; Martins, R.

    2016-01-01

    Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

  2. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Besleaga, C.; Stan, G.E.; Pintilie, I. [National Institute of Materials Physics, 405A Atomistilor, 077125 Magurele-Ilfov (Romania); Barquinha, P.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

    2016-08-30

    Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

  3. Design principles for high-pressure force fields: Aqueous TMAO solutions from ambient to kilobar pressures.

    Science.gov (United States)

    Hölzl, Christoph; Kibies, Patrick; Imoto, Sho; Frach, Roland; Suladze, Saba; Winter, Roland; Marx, Dominik; Horinek, Dominik; Kast, Stefan M

    2016-04-14

    Accurate force fields are one of the major pillars on which successful molecular dynamics simulations of complex biomolecular processes rest. They have been optimized for ambient conditions, whereas high-pressure simulations become increasingly important in pressure perturbation studies, using pressure as an independent thermodynamic variable. Here, we explore the design of non-polarizable force fields tailored to work well in the realm of kilobar pressures--while avoiding complete reparameterization. Our key is to first compute the pressure-induced electronic and structural response of a solute by combining an integral equation approach to include pressure effects on solvent structure with a quantum-chemical treatment of the solute within the embedded cluster reference interaction site model (EC-RISM) framework. Next, the solute's response to compression is taken into account by introducing pressure-dependence into selected parameters of a well-established force field. In our proof-of-principle study, the full machinery is applied to N,N,N-trimethylamine-N-oxide (TMAO) in water being a potent osmolyte that counteracts pressure denaturation. EC-RISM theory is shown to describe well the charge redistribution upon compression of TMAO(aq) to 10 kbar, which is then embodied in force field molecular dynamics by pressure-dependent partial charges. The performance of the high pressure force field is assessed by comparing to experimental and ab initio molecular dynamics data. Beyond its broad usefulness for designing non-polarizable force fields for extreme thermodynamic conditions, a good description of the pressure-response of solutions is highly recommended when constructing and validating polarizable force fields.

  4. Twenty-channel high-voltage pulse generators

    International Nuclear Information System (INIS)

    Anan'in, P.S.; Kashirin, A.P.

    1980-01-01

    A 20-channel high-voltage pulse generator operating with a mismatched load is described. The generator contains shaping lines 20 m long made of coaxial cable, a trigatron-type discharged, and isolating plates. The channel characteristic impedance is 50 Ohm. The maximum pulse amplitude is up to 15 kV on a high-resistance load and 7.5 kV on a matched one. The pulse duration is 100 ns at a pulse rise time of 12 ns, the delay introduced by the generator is 200 +-2.5 ns. Provision is made in the control circuit for compensation of the shaped pulse and separation of a pulse reflected from the load. The reflected pulse shape and amplitude characterize load parameters. Generator tests proved its high operational reliability (after 10 5 operations no significant changes in generator performances have been observed). The generator is intended for filmless data output from spark chambers

  5. High-performance carbon-coated ZnMn2O4 nanocrystallite supercapacitors with tailored microstructures enabled by a novel solution combustion method

    Science.gov (United States)

    Abdollahifar, Mozaffar; Huang, Sheng-Siang; Lin, Yu-Hsiang; Lin, Yan-Cheng; Shih, Bing-Yi; Sheu, Hwo-Shuenn; Liao, Yen-Fa; Wu, Nae-Lih

    2018-02-01

    Although ZnMn2O4 is widely studied as Li-ion battery anodes, it remains a challenge to tailor suitable microstructures of the oxide for supercapacitor applications. Carbon-coated ZnMn2O4 (C@ZMO) nanocrystallites showing high-performance pseudocapacitor behaviours in neutral aqueous electrolyte are for the first time successfully synthesised via a novel solution combustion process using polyethylene glycol as a multifunctional microstructure-directing agent. Controlling the molecular weight and amount of the polymer in the combustion solution enables the formation of highly-crystalline C@ZMO having substantially higher, by more than 5 folds, specific surface areas with mesoporous structures and conformal carbon coating via the one-pot synthesis process. The resulting C@ZMO supercapacitor electrodes in Na2SO4(aq) electrolyte exhibit ideal capacitive behaviours with specific capacitances up to 150 F g-1 and cycle stability showing no capacitance fade after 10,000 cycles at 60% of full capacity and >99% Coulombic efficiency. This study not only illustrates a new powerful synthesis route capable of producing conductive mesoporous crystalline oxide-based nanomaterials for energy storage applications but also reveals a new class of high-performance pseudocapacitive materials for neutral aqueous electrolytes.

  6. Solution processed organic bulk heterojunction tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht, Steve; Neher, Dieter [Soft Matter Physics, University of Potsdam, D-14476 Potsdam (Germany)

    2011-07-01

    One of the critical issues regarding the preparation of organic tandem solar cells from solution is the central recombination contact. This contact should be highly transparent and conductive to provide high recombination currents. Moreover it should protect the 1st subcell from the solution processing of the 2nd subcell. Here, we present a systematic study of various recombination contacts in organic bulk heterojunction tandem solar cells made from blends of different polymers with PCBM. We compare solution processed recombination contacts fabricated from metal-oxides (TiO{sub 2} and ZnO) and PEDOT:PSS with evaporated recombination contacts made from thin metal layers and molybdenum-oxide. The solar cell characteristics as well as the morphology of the contacts measured by AFM and SEM are illustrated. To compare the electrical properties of the varying contacts we show measurements on single carrier devices for different contact-structures. Alongside we present the results of optical modeling of the subcells and the complete tandem device and relate these results to experimental absorption and reflection spectra of the same structures. Based on these studies, layer thicknesses were adjusted for optimum current matching and device performance.

  7. Towards Portable Large-Scale Image Processing with High-Performance Computing.

    Science.gov (United States)

    Huo, Yuankai; Blaber, Justin; Damon, Stephen M; Boyd, Brian D; Bao, Shunxing; Parvathaneni, Prasanna; Noguera, Camilo Bermudez; Chaganti, Shikha; Nath, Vishwesh; Greer, Jasmine M; Lyu, Ilwoo; French, William R; Newton, Allen T; Rogers, Baxter P; Landman, Bennett A

    2018-05-03

    High-throughput, large-scale medical image computing demands tight integration of high-performance computing (HPC) infrastructure for data storage, job distribution, and image processing. The Vanderbilt University Institute for Imaging Science (VUIIS) Center for Computational Imaging (CCI) has constructed a large-scale image storage and processing infrastructure that is composed of (1) a large-scale image database using the eXtensible Neuroimaging Archive Toolkit (XNAT), (2) a content-aware job scheduling platform using the Distributed Automation for XNAT pipeline automation tool (DAX), and (3) a wide variety of encapsulated image processing pipelines called "spiders." The VUIIS CCI medical image data storage and processing infrastructure have housed and processed nearly half-million medical image volumes with Vanderbilt Advanced Computing Center for Research and Education (ACCRE), which is the HPC facility at the Vanderbilt University. The initial deployment was natively deployed (i.e., direct installations on a bare-metal server) within the ACCRE hardware and software environments, which lead to issues of portability and sustainability. First, it could be laborious to deploy the entire VUIIS CCI medical image data storage and processing infrastructure to another HPC center with varying hardware infrastructure, library availability, and software permission policies. Second, the spiders were not developed in an isolated manner, which has led to software dependency issues during system upgrades or remote software installation. To address such issues, herein, we describe recent innovations using containerization techniques with XNAT/DAX which are used to isolate the VUIIS CCI medical image data storage and processing infrastructure from the underlying hardware and software environments. The newly presented XNAT/DAX solution has the following new features: (1) multi-level portability from system level to the application level, (2) flexible and dynamic software

  8. High-definition polymeric membranes: construction of 3D lithographed channel arrays through control of natural building blocks dynamics.

    Science.gov (United States)

    Speranza, Valentina; Trotta, Francesco; Drioli, Enrico; Gugliuzza, Annarosa

    2010-02-01

    The fabrication of well-defined interfaces is in high demand in many fields of biotechnologies. Here, high-definition membrane-like arrays are developed through the self-assembly of water droplets, which work as natural building blocks for the construction of ordered channels. Solution viscosity together with the dynamics of the water droplets can decide the final formation of three-dimensional well-ordered patterns resembling anodic structures, especially because solvents denser than water are used. Particularly, the polymer solution viscosity is demonstrated to be a powerful tool for control of the mobility of submerged droplets during the microfabrication process. The polymeric patterns are structured at very high levels of organization and exhibit well-established transport-surface property relationships, considered basics for any types of advanced biotechnologies.

  9. Investigation of processes of interaction relativistic electrons with the solutions of organic dyes

    International Nuclear Information System (INIS)

    Buki, A.Yu.; Gokov, S.P.; Kazarinov, Yu.G.; Kalenik, S.A.; Kasilov, V.I.; Kochetov, S.S.; Makhnenko, P.L.; Mel'nitskiy, I.V.; Tverdohvalov, A.V.; Tsyatsko, V.V.; Shopen, O.A.

    2014-01-01

    Investigation of the processes of interaction of ionizing radiation with complex organic objects can solve a number of fundamental and applied problems in radiation physics, chemistry and biology. In this work we investigated the dose dependence (dose range 1...5MRad) optical density relative concentrations of water, alcohol and glycerine solution following organic dyes: methylene blue - C 16 H 18 N 3 SCl and methyl orange - C 14 H 14 N 3 O 3 SNa, irradiated with an electron beam with an energy of 16MeV. In the analysis of absorption spectra, it was found that water solutions of dyes have less resistance to radiation as compared with the alcohol and glycerol. Also, all solutions of methyl orange less radiation resistant than the methylene blue solution. Analysis of the spectra showed that these relationships are close to linear in the range of doses. To understand the physical and chemical processes occurring in the interaction of relativistic electrons with the studied organic objects were performed the computer simulations of the energy spectra of ions formed due to breaking the chemical bonds of molecules of dye solutions using the program SRIM-2010. The analysis showed that radiation - stimulated chemical processes play a major role in the destruction of the source of organic dye molecules. The remaining processes (interaction of electrons and nuclei, the cascade processes) accounts for about 10% of all molecular breaks.

  10. Fully solution-processing route toward highly transparent polymer solar cells.

    Science.gov (United States)

    Guo, Fei; Kubis, Peter; Stubhan, Tobias; Li, Ning; Baran, Derya; Przybilla, Thomas; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2014-10-22

    We report highly transparent polymer solar cells using metallic silver nanowires (AgNWs) as both the electron- and hole-collecting electrodes. The entire stack of the devices is processed from solution using a doctor blading technique. A thin layer of zinc oxide nanoparticles is introduced between photoactive layer and top AgNW electrode which plays decisive roles in device functionality: it serves as a mechanical foundation which allows the solution-deposition of top AgNWs, and more importantly it facilitates charge carriers extraction due to the better energy level alignment and the formation of ohmic contacts between the active layer/ZnO and ZnO/AgNWs. The resulting semitransparent polymer:fullerene solar cells showed a power conversion efficiency of 2.9%, which is 72% of the efficiency of an opaque reference device. Moreover, an average transmittance of 41% in the wavelength range of 400-800 nm is achieved, which is of particular interest for applications in transparent architectures.

  11. Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

    Science.gov (United States)

    Zhong, Sihua; Wang, Wenjie; Tan, Miao; Zhuang, Yufeng; Shen, Wenzhong

    2017-11-01

    Large-scale (156 mm × 156 mm) quasi-omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (θ), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal-assisted alkaline etching method, which is an all-solution-processed method and highly simple together with cost-effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)-textured solar cells, the SiNPs-textured solar cells possess lower carrier recombination and thus superior electrical performances, showing notable distinctions from other Si nanostructures-textured solar cells. Furthermore, SiNPs-textured solar cells have very little drop of quantum efficiency with increasing θ, demonstrating the quasi-omnidirectional characteristic. As an overall result, both the SiNPs-textured homojunction and heterojunction solar cells possess higher daily electric energy production with a maximum relative enhancement approaching 2.5%, when compared to their SiMPs-textured counterparts. The quasi-omnidirectional solar cell opens a new opportunity for photovoltaics to produce more electric energy with a low cost.

  12. Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

    Science.gov (United States)

    Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

    2017-01-25

    We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

  13. Highly efficient organic solar Cells based on a robust room-temperature solution-processed copper iodide hole transporter

    KAUST Repository

    Zhao, Kui; Ngongang Ndjawa, Guy Olivier; Jagadamma, Lethy Krishnan; El Labban, Abdulrahman; Hu, Hanlin; Wang, Qingxiao; Li, Ruipeng; Abdelsamie, Maged; Beaujuge, Pierre; Amassian, Aram

    2015-01-01

    Achieving high performance and reliable organic solar cells hinges on the development of stable and energetically suitable hole transporting buffer layers in tune with the electrode and photoactive materials of the solar cell stack. Here we have identified solution-processed copper(I) iodide (CuI) thin films with low-temperature processing conditions as an effective hole–transporting layer (HTL) for a wide range of polymer:fullerene bulk heterojunction (BHJ) systems. The solar cells using CuI HTL show higher power conversion efficiency (PCE) in standard device structure for polymer blends, up to PCE of 8.8%, as compared with poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, for a broad range of polymer:fullerene systems. The CuI layer properties and solar cell device behavior are shown to be remarkably robust and insensitive to a wide range of processing conditions of the HTL, including processing solvent, annealing temperature (room temperature up to 200 °C), and film thickness. CuI is also shown to improve the overall lifetime of solar cells in the standard architecture as compared to PEDOT:PSS. We further demonstrate promising solar cell performance when using CuI as top HTL in an inverted device architecture. The observation of uncommon properties, such as photoconductivity of CuI and templating effects on the BHJ layer formation, are also discussed. This study points to CuI as being a good candidate to replace PEDOT:PSS in solution-processed solar cells thanks to the facile implementation and demonstrated robustness of CuI thin films.

  14. Highly efficient organic solar Cells based on a robust room-temperature solution-processed copper iodide hole transporter

    KAUST Repository

    Zhao, Kui

    2015-07-30

    Achieving high performance and reliable organic solar cells hinges on the development of stable and energetically suitable hole transporting buffer layers in tune with the electrode and photoactive materials of the solar cell stack. Here we have identified solution-processed copper(I) iodide (CuI) thin films with low-temperature processing conditions as an effective hole–transporting layer (HTL) for a wide range of polymer:fullerene bulk heterojunction (BHJ) systems. The solar cells using CuI HTL show higher power conversion efficiency (PCE) in standard device structure for polymer blends, up to PCE of 8.8%, as compared with poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, for a broad range of polymer:fullerene systems. The CuI layer properties and solar cell device behavior are shown to be remarkably robust and insensitive to a wide range of processing conditions of the HTL, including processing solvent, annealing temperature (room temperature up to 200 °C), and film thickness. CuI is also shown to improve the overall lifetime of solar cells in the standard architecture as compared to PEDOT:PSS. We further demonstrate promising solar cell performance when using CuI as top HTL in an inverted device architecture. The observation of uncommon properties, such as photoconductivity of CuI and templating effects on the BHJ layer formation, are also discussed. This study points to CuI as being a good candidate to replace PEDOT:PSS in solution-processed solar cells thanks to the facile implementation and demonstrated robustness of CuI thin films.

  15. Information Fields Navigation with Piece-Wise Polynomial Approximation for High-Performance OFDM in WSNs

    Directory of Open Access Journals (Sweden)

    Wei Wei

    2013-01-01

    Full Text Available Since Wireless sensor networks (WSNs are dramatically being arranged in mission-critical applications,it changes into necessary that we consider application requirements in Internet of Things. We try to use WSNs to assist information query and navigation within a practical parking spaces environment. Integrated with high-performance OFDM by piece-wise polynomial approximation, we present a new method that is based on a diffusion equation and a position equation to accomplish the navigation process conveniently and efficiently. From the point of view of theoretical analysis, our jobs hold the lower constraint condition and several inappropriate navigation can be amended. Information diffusion and potential field are introduced to reach the goal of accurate navigation and gradient descent method is applied in the algorithm. Formula derivations and simulations manifest that the method facilitates the solution of typical sensor network configuration information navigation. Concurrently, we also treat channel estimation and ICI mitigation for very high mobility OFDM systems, and the communication is between a BS and mobile target at a terrible scenario. The scheme proposed here combines the piece-wise polynomial expansion to approximate timevariations of multipath channels. Two near symbols are applied to estimate the first-and second-order parameters. So as to improve the estimation accuracy and mitigate the ICI caused by pilot-aided estimation, the multipath channel parameters were reestimated in timedomain employing the decided OFDM symbol. Simulation results show that this method would improve system performance in a complex environment.

  16. Multi-channel service retailing: The effects of channel performance satisfaction on behavioral intentions.

    NARCIS (Netherlands)

    Birgelen, van M.; Jong, de A.; Ruyter, de J.C.

    2006-01-01

    Abstract The number of channels that retailers can use interchangeably to provide customer service has increased. We report on a study of clients of a large retail bank that investigates the channel performance satisfaction–behavioral intentions relationship when the traditional service channel

  17. Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

    Science.gov (United States)

    Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

    2018-04-18

    A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

  18. A simple high performance liquid chromatography method for analyzing paraquat in soil solution samples.

    Science.gov (United States)

    Ouyang, Ying; Mansell, Robert S; Nkedi-Kizza, Peter

    2004-01-01

    A high performance liquid chromatography (HPLC) method with UV detection was developed to analyze paraquat (1,1'-dimethyl-4,4'-dipyridinium dichloride) herbicide content in soil solution samples. The analytical method was compared with the liquid scintillation counting (LSC) method using 14C-paraquat. Agreement obtained between the two methods was reasonable. However, the detection limit for paraquat analysis was 0.5 mg L(-1) by the HPLC method and 0.05 mg L(-1) by the LSC method. The LSC method was, therefore, 10 times more precise than the HPLC method for solution concentrations less than 1 mg L(-1). In spite of the high detection limit, the UC (nonradioactive) HPLC method provides an inexpensive and environmentally safe means for determining paraquat concentration in soil solution compared with the 14C-LSC method.

  19. Application of Silver Ion High-Performance Liquid Chromatography for Quantitative Analysis of Selected n-3 and n-6 PUFA in Oil Supplements.

    Science.gov (United States)

    Czajkowska-Mysłek, Anna; Siekierko, Urszula; Gajewska, Magdalena

    2016-04-01

    The aim of this study was to develop a simple method for simultaneous determination of selected cis/cis PUFA-LNA (18:2), ALA (18:3), GLA (18:3), EPA (20:5), and DHA (22:6) by silver ion high-performance liquid chromatography coupled to a diode array detector (Ag-HPLC-DAD). The separation was performed on three Luna SCX Silver Loaded columns connected in series maintained at 10 °C with isocratic elution by 1% acetonitrile in n-hexane. The applied chromatographic system allowed a baseline separation of standard mixture of n-3 and n-6 fatty acid methyl esters containing LNA, DHA, and EPA and partial separation of ALA and GLA positional isomers. The method was validated by means of linearity, precision, stability, and recovery. Limits of detection (LOD) for considered PUFA standard solutions ranged from 0.27 to 0.43 mg L(-1). The developed method was used to evaluate of n-3 and n-6 fatty acids contents in plant and fish softgel oil capsules, results were compared with reference GC-FID based method.

  20. Architecting Web Sites for High Performance

    Directory of Open Access Journals (Sweden)

    Arun Iyengar

    2002-01-01

    Full Text Available Web site applications are some of the most challenging high-performance applications currently being developed and deployed. The challenges emerge from the specific combination of high variability in workload characteristics and of high performance demands regarding the service level, scalability, availability, and costs. In recent years, a large body of research has addressed the Web site application domain, and a host of innovative software and hardware solutions have been proposed and deployed. This paper is an overview of recent solutions concerning the architectures and the software infrastructures used in building Web site applications. The presentation emphasizes three of the main functions in a complex Web site: the processing of client requests, the control of service levels, and the interaction with remote network caches.

  1. Wavy channel thin film transistor architecture for area efficient, high performance and low power displays

    KAUST Repository

    Hanna, Amir

    2013-12-23

    We demonstrate a new thin film transistor (TFT) architecture that allows expansion of the device width using continuous fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.5× increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, ~100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers an interesting opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Realizing Highly Efficient Solution-Processed Homojunction-Like Sky-Blue OLEDs by Using Thermally Activated Delayed Fluorescent Emitters Featuring an Aggregation-Induced Emission Property.

    Science.gov (United States)

    Wu, Kailong; Wang, Zian; Zhan, Lisi; Zhong, Cheng; Gong, Shaolong; Xie, Guohua; Yang, Chuluo

    2018-04-05

    Two new blue emitters, i.e., bis-[2-(9,9-dimethyl-9,10-dihydroacridine)-phenyl]-sulfone ( o-ACSO2) and bis-[3-(9,9-dimethyl-9,10-dihydroacridine)-phenyl]-sulfone ( m-ACSO2), with reserved fine thermally activated delayed fluorescent (TADF) nature and simply tuned thermal and optoelectronic properties, were synthesized by isomer engineering. The meta-linking compound, i.e., m-ACSO2, obtains the highest photoluminescence quantum yield with a small singlet-triplet energy gap, a moderate delayed fluorescent lifetime, excellent solubility, and neat film homogeneity. Due to its unique aggregation-induced emission (AIE) character, neat film-based heterojunction-like organic light-emitting diodes (OLEDs) are achievable. By inserting an excitonic inert exciton-blocking layer, the PN heterojunction-like emission accompanied by intefacial exciplex was shifted to a homojunction-like channel mainly from the AIE emitter itself, providing a new tactic to generate efficient blue color from neat films. The solution-processed nondoped sky-blue OLED employing m-ACSO2 as emitter with homojunction-like emission achieved a maximum external quantum efficiency of 17.2%. The design strategies presented herein provide practical methods to construct efficient blue TADF dyes and realize high-performance blue TADF devices.

  3. Performance of TCP over UMTS common and dedicated channels

    NARCIS (Netherlands)

    Lo, Anthony; Heijenk, Geert; Bruma, Cezar; Gameiro, A.

    2003-01-01

    Universal Mobile Telecommunications System (UMTS) is a third-generation cellular network that enables high-speed wireless Internet access. This paper investigates the performance of Transmission Control Protocol (TCP) over UMTS utilizing a common and four dedicated transport channels with bit rates

  4. Efficient high-performance ultrasound beamforming using oversampling

    Science.gov (United States)

    Freeman, Steven R.; Quick, Marshall K.; Morin, Marc A.; Anderson, R. C.; Desilets, Charles S.; Linnenbrink, Thomas E.; O'Donnell, Matthew

    1998-05-01

    High-performance and efficient beamforming circuitry is very important in large channel count clinical ultrasound systems. Current state-of-the-art digital systems using multi-bit analog to digital converters (A/Ds) have matured to provide exquisite image quality with moderate levels of integration. A simplified oversampling beamforming architecture has been proposed that may a low integration of delta-sigma A/Ds onto the same chip as digital delay and processing circuitry to form a monolithic ultrasound beamformer. Such a beamformer may enable low-power handheld scanners for high-end systems with very large channel count arrays. This paper presents an oversampling beamformer architecture that generates high-quality images using very simple; digitization, delay, and summing circuits. Additional performance may be obtained with this oversampled system for narrow bandwidth excitations by mixing the RF signal down in frequency to a range where the electronic signal to nose ratio of the delta-sigma A/D is optimized. An oversampled transmit beamformer uses the same delay circuits as receive and eliminates the need for separate transmit function generators.

  5. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a

  6. Robust High Performance Aquaporin based Biomimetic Membranes

    DEFF Research Database (Denmark)

    Helix Nielsen, Claus; Zhao, Yichun; Qiu, C.

    2013-01-01

    on top of a support membrane. Control membranes, either without aquaporins or with the inactive AqpZ R189A mutant aquaporin served as controls. The separation performance of the membranes was evaluated by cross-flow forward osmosis (FO) and reverse osmosis (RO) tests. In RO the ABM achieved a water......Aquaporins are water channel proteins with high water permeability and solute rejection, which makes them promising for preparing high-performance biomimetic membranes. Despite the growing interest in aquaporin-based biomimetic membranes (ABMs), it is challenging to produce robust and defect...... permeability of ~ 4 L/(m2 h bar) with a NaCl rejection > 97% at an applied hydraulic pressure of 5 bar. The water permeability was ~40% higher compared to a commercial brackish water RO membrane (BW30) and an order of magnitude higher compared to a seawater RO membrane (SW30HR). In FO, the ABMs had > 90...

  7. Two-channel totally asymmetric simple exclusion processes

    International Nuclear Information System (INIS)

    Pronina, Ekaterina; Kolomeisky, Anatoly B

    2004-01-01

    Totally asymmetric simple exclusion processes, consisting of two coupled parallel lattice chains with particles interacting with hard-core exclusion and moving along the channels and between them, are considered. In the limit of strong coupling between the channels, the particle currents, density profiles and a phase diagram are calculated exactly by mapping the system into an effective one-channel totally asymmetric exclusion model. For intermediate couplings, a simple approximate theory, that describes the particle dynamics in vertical clusters of two corresponding parallel sites exactly and neglects the correlations between different vertical clusters, is developed. It is found that, similarly to the case of one-channel totally asymmetric simple exclusion processes, there are three stationary state phases, although the phase boundaries and stationary properties strongly depend on inter-channel coupling. Extensive computer Monte Carlo simulations fully support the theoretical predictions

  8. High Glucose Represses hERG K+ Channel Expression through Trafficking Inhibition

    Directory of Open Access Journals (Sweden)

    Yuan-Qi Shi

    2015-08-01

    Full Text Available Background/Aims: Abnormal QT prolongation is the most prominent cardiac electrical disturbance in patients with diabetes mellitus (DM. It is well known that the human ether-ago-go-related gene (hERG controls the rapid delayed rectifier K+ current (IKr in cardiac cells. The expression of the hERG channel is severely down-regulated in diabetic hearts, and this down-regulation is a critical contributor to the slowing of repolarization and QT prolongation. However, the intracellular mechanisms underlying the diabetes-induced hERG deficiency remain unknown. Methods: The expression of the hERG channel was assessed via western blot analysis, and the hERG current was detected with a patch-clamp technique. Results: The results of our study revealed that the expression of the hERG protein and the hERG current were substantially decreased in high-glucose-treated hERG-HEK cells. Moreover, we demonstrated that the high-glucose-mediated damage to the hERG channel depended on the down-regulation of protein levels but not the alteration of channel kinetics. These discoveries indicated that high glucose likely disrupted hERG channel trafficking. From the western blot and immunoprecipitation analyses, we found that high glucose induced trafficking inhibition through an effect on the expression of Hsp90 and its interaction with hERG. Furthermore, the high-glucose-induced inhibition of hERG channel trafficking could activate the unfolded protein response (UPR by up-regulating the expression levels of activating transcription factor-6 (ATF-6 and the ER chaperone protein calnexin. In addition, we demonstrated that 100 nM insulin up-regulated the expression of the hERG channel and rescued the hERG channel repression caused by high glucose. Conclusion: The results of our study provide the first evidence of a high-glucose-induced hERG channel deficiency resulting from the inhibition of channel trafficking. Furthermore, insulin promotes the expression of the hERG channel

  9. Performance analysis of LDPC codes on OOK terahertz wireless channels

    International Nuclear Information System (INIS)

    Liu Chun; Wang Chang; Cao Jun-Cheng

    2016-01-01

    Atmospheric absorption, scattering, and scintillation are the major causes to deteriorate the transmission quality of terahertz (THz) wireless communications. An error control coding scheme based on low density parity check (LDPC) codes with soft decision decoding algorithm is proposed to improve the bit-error-rate (BER) performance of an on-off keying (OOK) modulated THz signal through atmospheric channel. The THz wave propagation characteristics and channel model in atmosphere is set up. Numerical simulations validate the great performance of LDPC codes against the atmospheric fading and demonstrate the huge potential in future ultra-high speed beyond Gbps THz communications. (paper)

  10. Simulating single-event burnout of n-channel power MOSFET's

    International Nuclear Information System (INIS)

    Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.

    1993-01-01

    Heavy ions are ubiquitous in a space environment. Single-event burnout of power MOSFET's is a sudden catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device structure. The passage of the heavy ion generates a current filament that locally turns on a parasitic n-p-n transistor inherent to the power MOSFET. Subsequent high currents and high voltage in the device induce second breakdown of the parasitic bipolar transistor and hence meltdown of the device. This paper presents a model that can be used for simulating the burnout mechanism in order to gain insight into the significant device parameters that most influence the single-event burnout susceptibility of n-channel power MOSFET's

  11. Marketing channel behaviour and performance

    OpenAIRE

    Duarte, Margarida

    2000-01-01

    Thesis submitted to University of Manchester for the degree of Doctor of Philosophy in the Faculty of Business Administration. A major aim of this study is to offer a relatively comprehensive picture of marketing channel behaviour and performance. Given the statistical difficulties in testing a very large, comprehensive model to achieve this aim, two separate but overlapping models are proposed. One model specifically addresses behaviour in marketing channels, while the other integrates k...

  12. Synthesis of (Cr,V){sub 2}(C,N) solid solution powders by thermal processing precursors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Anrui [School of Materials Science & Engineering, Sichuan University, Chengdu, 610065 (China); Liu, Ying [School of Materials Science & Engineering, Sichuan University, Chengdu, 610065 (China); Key Laboratory of Advanced Special Material & Technology, Ministry of Education, Chengdu, 610065 (China); Ma, Shiqing; Qiu, Yuchong; Rong, Pengcheng; Ye, Jinwen [School of Materials Science & Engineering, Sichuan University, Chengdu, 610065 (China)

    2017-06-01

    The single-phase (Cr,V){sub 2}(C,N) solid solution powders were fabricated via carbothermal reduction-nitridation (CRN) processing technique. The effects of heat treatment temperature, nitrogen pressure and carbon proportion were experimentally studied in detail by X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and thermal analysis. The chemical transformations of vanadium and chromium compounds were as follows: precursors → V{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} → Cr{sub 3}C{sub 2}, Cr{sub 2}O{sub 3}, (Cr,V){sub 2}(C,N) → (Cr,V){sub 2}(C,N). When the heat-treated temperature was below 1200 °C, chromium oxides didn’t completely react. However, higher temperature ∼1300 °C could not only lead to the segregation of some nitrides and carbon black, but also to the occurrence of fiber-bridged particles. The system nitrogen pressure over 0.03 MPa would cause a subtle transformation of (Cr,V){sub 2}(C,N) to VCrN{sub 2}. When the carbon proportion was below 15 wt%, the oxides could not be completely reduced, while when the carbon proportion was above 15.5 wt%, some undesired carbides, like Cr{sub 23}C{sub 6} and Cr{sub 3}C{sub 2}, would form. Ultimately, the homogeneously distributed pure-phase (Cr,V){sub 2}(C,N) spherical particles with the average size of ∼1.5 μm were obtained at the optimal conditions of the treatment of precursors at 1200 °C for 1 h with the nitrogen pressure of 0.03 MPa and carbon content of 15.5 wt%. The chemical composition of the solid solution with the optimal process could be drawn as (Cr{sub 0.85}V{sub 0.15}){sub 2}(C{sub 0.57}N{sub 0.43}). Thermal processing precursors method shows the advantages of lower synthesis temperature, shorter period and finer particles when comparing with the conventional preparations. - Highlights: • Single phase of (Cr,V){sub 2}(C,N) powders were synthesized for the first time. • Precursors were used to prepared the powders by carbothermal

  13. Composite and Cascaded Generalized-K Fading Channel Modeling and Their Diversity and Performance Analysis

    KAUST Repository

    Ansari, Imran Shafique

    2010-12-01

    The introduction of new schemes that are based on the communication among nodes has motivated the use of composite fading models due to the fact that the nodes experience different multipath fading and shadowing statistics, which subsequently determines the required statistics for the performance analysis of different transceivers. The end-to-end signal-to-noise-ratio (SNR) statistics plays an essential role in the determination of the performance of cascaded digital communication systems. In this thesis, a closed-form expression for the probability density function (PDF) of the end-end SNR for independent but not necessarily identically distributed (i.n.i.d.) cascaded generalized-K (GK) composite fading channels is derived. The developed PDF expression in terms of the Meijer-G function allows the derivation of subsequent performance metrics, applicable to different modulation schemes, including outage probability, bit error rate for coherent as well as non-coherent systems, and average channel capacity that provides insights into the performance of a digital communication system operating in N cascaded GK composite fading environment. Another line of research that was motivated by the introduction of composite fading channels is the error performance. Error performance is one of the main performance measures and derivation of its closed-form expression has proved to be quite involved for certain systems. Hence, in this thesis, a unified closed-form expression, applicable to different binary modulation schemes, for the bit error rate of dual-branch selection diversity based systems undergoing i.n.i.d. GK fading is derived in terms of the extended generalized bivariate Meijer G-function.

  14. Prototype performance studies of a Full Mesh ATCA-based General Purpose Data Processing Board

    CERN Document Server

    Okumura, Yasuyuki; Liu, Tiehui Ted; Yin, Hang

    2013-01-01

    High luminosity conditions at the LHC pose many unique challenges for potential silicon based track trigger systems. One of the major challenges is data formatting, where hits from thousands of silicon modules must first be shared and organized into overlapping eta-phi trigger towers. Communication between nodes requires high bandwidth, low latency, and flexible real time data sharing, for which a full mesh backplane is a natural solution. A custom Advanced Telecommunications Computing Architecture data processing board is designed with the goal of creating a scalable architecture abundant in flexible, non-blocking, high bandwidth board to board communication channels while keeping the design as simple as possible. We have performed the first prototype board testing and our first attempt at designing the prototype system has proven to be successful. Leveraging the experience we gained through designing, building and testing the prototype board system we are in the final stages of laying out the next generatio...

  15. Bromfenac ophthalmic solution 0.09 %: human aqueous humor concentration detected by high-performance liquid chromatography.

    Science.gov (United States)

    Macrì, Angelo; Vagge, Aldo; Salis, Annalisa; Fucile, Carmen; Marini, Valeria; Martelli, Antonietta; Giuffrida, Sebastiano; Iester, Michele; Damonte, Gianluca; Mattioli, Francesca

    2017-04-01

    The purpose of this study was to evaluate the aqueous humor concentrations of bromfenac ophthalmic solution 0.09 % in patients undergoing phacoemulsification. Patients requiring cataract extraction received one drop (50 µL) of bromfenac 0.09 % solution in the eye to be operated, before bedtime the day before surgery or the morning of the surgery. The last administration was recorded. At the time of paracentesis, an aqueous humor sample was collected with a 30-gauge needle attached to a TB syringe and was later analyzed by high-performance liquid chromatography for drug concentration. 188 treated volunteers and 48 control, untreated, subjects were included in the study. The mean aqueous concentration of bromfenac in the treated group was 37.60 ± 68.86 and 0 nM (nmol/L) in the control group (p < 0.0001). Correlation coefficient in bromfenac group between time elapsed from instillation and drug concentration was -0.16 (p not significant). Bromfenac showed properties of good penetration and stable concentration in aqueous humor up to about 12 h after instillation.

  16. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  17. A high-throughput two channel discrete wavelet transform architecture for the JPEG2000 standard

    Science.gov (United States)

    Badakhshannoory, Hossein; Hashemi, Mahmoud R.; Aminlou, Alireza; Fatemi, Omid

    2005-07-01

    The Discrete Wavelet Transform (DWT) is increasingly recognized in image and video compression standards, as indicated by its use in JPEG2000. The lifting scheme algorithm is an alternative DWT implementation that has a lower computational complexity and reduced resource requirement. In the JPEG2000 standard two lifting scheme based filter banks are introduced: the 5/3 and 9/7. In this paper a high throughput, two channel DWT architecture for both of the JPEG2000 DWT filters is presented. The proposed pipelined architecture has two separate input channels that process the incoming samples simultaneously with minimum memory requirement for each channel. The architecture had been implemented in VHDL and synthesized on a Xilinx Virtex2 XCV1000. The proposed architecture applies DWT on a 2K by 1K image at 33 fps with a 75 MHZ clock frequency. This performance is achieved with 70% less resources than two independent single channel modules. The high throughput and reduced resource requirement has made this architecture the proper choice for real time applications such as Digital Cinema.

  18. Performance of equal gain combining with quantized phases in rayleigh fading channels

    KAUST Repository

    Rizvi, Umar H.

    2011-01-01

    In this paper, we analyze the error probability of equal gain combining with quantized channel phase compensation for binary phase shift keying signalling over Rayleigh fading channels. The probability density and characteristic functions of the combined signal amplitude are derived and used to compute the analytic expressions for the bit error probability in dependance of the number of quantization levels L, the number of diversity branches N-R and the average received signal-to-noise ratio. The analysis is utilized to outline the trade-off between N-R and L and to compare the performance with non-coherent binary frequency shift keying and differential binary phase shift keying schemes under diversity reception. © 2011 IEEE.

  19. Solution-processed small molecules as mixed host for highly efficient blue and white phosphorescent organic light-emitting diodes.

    Science.gov (United States)

    Fu, Qiang; Chen, Jiangshan; Shi, Changsheng; Ma, Dongge

    2012-12-01

    The widely used hole-transporting host 4,4',4″-tris(N-carbazolyl)-triphenylamine (TCTA) blended with either a hole-transporting or an electron-transporting small-molecule material as a mixed-host was investigated in the phosphorescent organic light-emitting diodes (OLEDs) fabricated by the low-cost solution-process. The performance of the solution-processed OLEDs was found to be very sensitive to the composition of the mixed-host systems. The incorporation of the hole-transporting 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) into TCTA as the mixed-host was demonstrated to greatly reduce the driving voltage and thus enhance the efficiency due to the improvement of hole injection and transport. On the basis of the mixed-host of TCTA:TAPC, we successfully fabricated low driving voltage and high efficiency blue and white phosphorescent OLEDs. A maximum forward viewing current efficiency of 32.0 cd/A and power efficiency of 25.9 lm/W were obtained in the optimized mixed-host blue OLED, which remained at 29.6 cd/A and 19.1 lm/W at the luminance of 1000 cd/m(2) with a driving voltage as low as 4.9 V. The maximum efficiencies of 37.1 cd/A and 32.1 lm/W were achieved in a single emissive layer white OLED based on the TCTA:TAPC mixed-host. Even at 1000 cd/m(2), the efficiencies still reach 34.2 cd/A and 23.3 lm/W and the driving voltage is only 4.6 V, which is comparable to those reported from the state-of-the-art vacuum-evaporation deposited white OLEDs.

  20. The Influence of the Osmotic Dehydration Process on Physicochemical Properties of Osmotic Solution.

    Science.gov (United States)

    Lech, Krzysztof; Michalska, Anna; Wojdyło, Aneta; Nowicka, Paulina; Figiel, Adam

    2017-12-16

    The osmotic dehydration (OD) process consists of the removal of water from a material during which the solids from the osmotic solution are transported to the material by osmosis. This process is commonly performed in sucrose and salt solutions. Taking into account that a relatively high consumption of those substances might have a negative effect on human health, attempts have been made to search for alternatives that can be used for osmotic dehydration. One of these is an application of chokeberry juice with proven beneficial properties to human health. This study aimed to evaluate the physicochemical properties of the OD solution (chokeberry juice concentrate) before and after the osmotic dehydration of carrot and zucchini. The total polyphenolics content, antioxidant capacity (ABTS, FRAP), dynamic viscosity, density, and water activity were examined in relation to the juice concentration used for the osmotic solution before and after the OD process. During the osmotic dehydration process, the concentration of the chokeberry juice decreased. Compounds with lower molecular weight and lower antioxidant capacity present in concentrated chokeberry juice had a stronger influence on the exchange of compounds during the OD process in carrot and zucchini. The water activity of the osmotic solution increased after the osmotic dehydration process. It was concluded that the osmotic solution after the OD process might be successfully re-used as a product with high quality for i.e. juice production.

  1. High spin spectroscopy near the N=Z line: Channel selection and excitation energy systematics

    Energy Technology Data Exchange (ETDEWEB)

    Svensson, C.E.; Cameron, J.A.; Flibotte, S. [McMaster Univ., Ontario (Canada)] [and others

    1996-12-31

    The total {gamma}-ray and charged-particle energies emitted in fusion-evaporation reactions leading to N=Z compound systems in the A = 50-70 mass region have been measured with the 8{pi} {gamma}-ray spectrometer and the miniball charged-particle detector array. A new method of channel selection has been developed which combines particle identification with these total energy measurements and greatly improves upon the selectivity possible with particle detection alone. In addition, the event by event measurement of total {gamma}-ray energies using the BGO ball of the 8{pi} spectrometer has allowed a determination of excitation energies following particle evaporation for a large number of channels in several different reactions. The new channel selection procedure and excitation energy systematics are illustrated with data from the reaction of {sup 24}Mg on {sup 40}Ca at E{sub lab} = 80MeV.

  2. Morphology Development in Solution-Processed Functional Organic Blend Films: An In Situ Viewpoint.

    Science.gov (United States)

    Richter, Lee J; DeLongchamp, Dean M; Amassian, Aram

    2017-05-10

    Solution-processed organic films are a facile route to high-speed, low cost, large-area deposition of electrically functional components (transistors, solar cells, emitters, etc.) that can enable a diversity of emerging technologies, from Industry 4.0, to the Internet of things, to point-of-use heath care and elder care. The extreme sensitivity of the functional performance of organic films to structure and the general nonequilibrium nature of solution drying result in extreme processing-performance correlations. In this Review, we highlight insights into the fundamentals of solution-based film deposition afforded by recent state-of-the-art in situ measurements of functional film drying. Emphasis is placed on multimodal studies that combine surface-sensitive X-ray scattering (GIWAXS or GISAXS) with optical characterization to clearly define the evolution of solute structure (aggregation, crystallinity, and morphology) with film thickness.

  3. Morphology Development in Solution-Processed Functional Organic Blend Films: An In Situ Viewpoint

    KAUST Repository

    Richter, Lee J.

    2017-04-17

    Solution-processed organic films are a facile route to high-speed, low cost, large-area deposition of electrically functional components (transistors, solar cells, emitters, etc.) that can enable a diversity of emerging technologies, from Industry 4.0, to the Internet of things, to point-of-use heath care and elder care. The extreme sensitivity of the functional performance of organic films to structure and the general nonequilibrium nature of solution drying result in extreme processing-performance correlations. In this Review, we highlight insights into the fundamentals of solution-based film deposition afforded by recent state-of-the-art in situ measurements of functional film drying. Emphasis is placed on multimodal studies that combine surface-sensitive X-ray scattering (GIWAXS or GISAXS) with optical characterization to clearly define the evolution of solute structure (aggregation, crystallinity, and morphology) with film thickness.

  4. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    International Nuclear Information System (INIS)

    Yu, Z.X.; Ma, Y.Z.; Zhao, Y.L.; Huang, J.B.; Wang, W.Z.; Moliere, M.; Liao, H.L.

    2017-01-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P_(_0_0_2_)_. It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  5. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Z.X., E-mail: zexin.yu@utbm.fr [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Ma, Y.Z., E-mail: yangzhou.ma@outlook.com [School of Materials Science and Engineering, Anhui University of Technology, Ma’anshan 243002 (China); Zhao, Y.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Huang, J.B.; Wang, W.Z. [Key Lab of Safety Science of Pressurized System, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237 (China); Moliere, M.; Liao, H.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France)

    2017-08-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P{sub (002).} It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  6. Process for final storage of high level radioactive fission product solution

    International Nuclear Information System (INIS)

    Ellis, J.R.B.; Fries, B.A.

    1984-01-01

    In this process for the storage of an aqueous solution of radioactive nuclides, the solution is diluted with system water, which is obtained from a reservoir below the bottom of the sea in a porous geological stratum. After dilution, the diluted solution is injected into the same geological stratum under the bottom of the sea. (orig.) [de

  7. Highly efficient exciplex formation via radical ion pair recombination in X-irradiated alkane solutions for luminophores with short fluorescence lifetimes.

    Science.gov (United States)

    Melnikov, Anatoly R; Kalneus, Evgeny V; Korolev, Valeri V; Dranov, Igor G; Kruppa, Alexander I; Stass, Dmitri V

    2014-08-01

    X-irradiation of alkane solutions of N,N-dimethylaniline with various organic luminophores produces characteristic emission bands ascribed to the corresponding exciplexes. In contrast to optical generation, which requires diffusion-controlled quenching of excited states, an additional channel of exciplex formation via irreversible recombination of radical ion pairs is operative here, which produces exciplexes in solution with high efficiency even for p-terphenyl and diphenylacetylene having fluorescence decay times of 0.95 ns and 8 ps, respectively. The exciplex emission band is sensitive to an external magnetic field and exerts a very large observed magnetic field effect of up to 20%, the maximum possible value under the conditions of the described experiment.

  8. The N-terminal tail of hERG contains an amphipathic α-helix that regulates channel deactivation.

    Directory of Open Access Journals (Sweden)

    Chai Ann Ng

    Full Text Available The cytoplasmic N-terminal domain of the human ether-a-go-go related gene (hERG K+ channel is critical for the slow deactivation kinetics of the channel. However, the mechanism(s by which the N-terminal domain regulates deactivation remains to be determined. Here we show that the solution NMR structure of the N-terminal 135 residues of hERG contains a previously described Per-Arnt-Sim (PAS domain (residues 26-135 as well as an amphipathic α-helix (residues 13-23 and an initial unstructured segment (residues 2-9. Deletion of residues 2-25, only the unstructured segment (residues 2-9 or replacement of the α-helix with a flexible linker all result in enhanced rates of deactivation. Thus, both the initial flexible segment and the α-helix are required but neither is sufficient to confer slow deactivation kinetics. Alanine scanning mutagenesis identified R5 and G6 in the initial flexible segment as critical for slow deactivation. Alanine mutants in the helical region had less dramatic phenotypes. We propose that the PAS domain is bound close to the central core of the channel and that the N-terminal α-helix ensures that the flexible tail is correctly orientated for interaction with the activation gating machinery to stabilize the open state of the channel.

  9. Performance Analysis of Wavelet Channel Coding in COST207-based Channel Models on Simulated Radio-over-Fiber Systems at the W-Band

    DEFF Research Database (Denmark)

    Cavalcante, Lucas Costa Pereira; Silveira, Luiz F. Q.; Rommel, Simon

    2016-01-01

    Millimeter wave communications based on photonic technologies have gained increased attention to provide optic fiber-like capacity in wireless environments. However, the new hybrid fiber-wireless channel represents new challenges in terms of signal transmission performance analysis. Traditionally......, such systems use diversity schemes in combination with digital signal processing (DSP) techniques to overcome effects such as fading and inter-symbol interference (ISI). Wavelet Channel Coding (WCC) has emerged as a technique to minimize the fading effects of wireless channels, which is a mayor challenge...... in systems operating in the millimeter wave regime. This work takes the WCC one step beyond by performance evaluation in terms of bit error probability, over time-varying, frequency-selective multipath Rayleigh fading channels. The adopted propagation model follows the COST207 norm, the main international...

  10. Solution-processed white organic light-emitting devices based on small-molecule materials

    International Nuclear Information System (INIS)

    Wang Dongdong; Wu Zhaoxin; Zhang Xinwen; Wang Dawei; Hou Xun

    2010-01-01

    We investigated solution-processed films of 4,4'-bis(2,2-diphenylvinyl)-1,1'-bibenyl (DPVBi) and its blends with N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) by atomic force microscopy (AFM). The AFM result shows that the solution-processed films are pin-free and their morphology is smooth enough to be used in OLEDs. We have developed a solution-processed white organic light-emitting device (WOLEDs) based on small-molecules, in which the light-emitting layer (EML) was formed by spin-coating the solution of small-molecules on top of the solution-processed hole-transporting layer. This WOLEDs, in which the EML consists of co-host (DPVBi and TPD), the blue dopant (4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and the yellow dye (5,6,11,12-tetraphenylnaphtacene), has a current efficiency of 6.0 cd/A at a practical luminance of 1000 cd/m 2 , a maximum luminance of 22500 cd/m 2 , and its color coordinates are quite stable. Our research shows a possible approach to achieve efficient and low-cost small-molecule-based WOLEDs, which avoids the complexities of the co-evaporation process of multiple dopants and host materials in vacuum depositions.

  11. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

    International Nuclear Information System (INIS)

    Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

    2010-01-01

    This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

  12. Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

    Directory of Open Access Journals (Sweden)

    Peter Kordos

    2005-01-01

    Full Text Available Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor HFETs is compared. It is found that MOSHFETs exhibit better DC and RF properties than simple HFET counterparts. Deposited SiO2 yielded an increase of the sheet carrier density from 7.6x10^12 cm^-2 to 9.2x10^12 cm^-2 and subsequent increase of the static drain saturation current from 0.75 A/mm to 1.09 A/mm. Small-signal RF characterisation of MOSHFETs showed an extrinsic current gain cut-off frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. These are fully comparable values with state-of-the-art AlGaN/GaN HFETs. Finnaůůy, microwave power measurements confirmed excellent performance of MOSHFETs:the output power measured at 7 GHz is about two-times larger than that of simple unpassived HFET. Thus, a great potential in application of GaN-based MOSHFETs is documented. 

  13. Resilient and Robust High Performance Computing Platforms for Scientific Computing Integrity

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Yier [Univ. of Central Florida, Orlando, FL (United States)

    2017-07-14

    As technology advances, computer systems are subject to increasingly sophisticated cyber-attacks that compromise both their security and integrity. High performance computing platforms used in commercial and scientific applications involving sensitive, or even classified data, are frequently targeted by powerful adversaries. This situation is made worse by a lack of fundamental security solutions that both perform efficiently and are effective at preventing threats. Current security solutions fail to address the threat landscape and ensure the integrity of sensitive data. As challenges rise, both private and public sectors will require robust technologies to protect its computing infrastructure. The research outcomes from this project try to address all these challenges. For example, we present LAZARUS, a novel technique to harden kernel Address Space Layout Randomization (KASLR) against paging-based side-channel attacks. In particular, our scheme allows for fine-grained protection of the virtual memory mappings that implement the randomization. We demonstrate the effectiveness of our approach by hardening a recent Linux kernel with LAZARUS, mitigating all of the previously presented side-channel attacks on KASLR. Our extensive evaluation shows that LAZARUS incurs only 0.943% overhead for standard benchmarks, and is therefore highly practical. We also introduced HA2lloc, a hardware-assisted allocator that is capable of leveraging an extended memory management unit to detect memory errors in the heap. We also perform testing using HA2lloc in a simulation environment and find that the approach is capable of preventing common memory vulnerabilities.

  14. Multi-Scale Thermal Heat Tracer Tests for Characterizing Transport Processes and Flow Channelling in Fractured Media: Theory and Field Experiments

    Science.gov (United States)

    de La Bernardie, J.; Klepikova, M.; Bour, O.; Le Borgne, T.; Dentz, M.; Guihéneuf, N.; Gerard, M. F.; Lavenant, N.

    2017-12-01

    The characterization of flow and transport in fractured media is particularly challenging because hydraulic conductivity and transport properties are often strongly dependent on the geometric structure of the fracture surfaces. Here we show how thermal tracer tests may be an excellent complement to conservative solute tracer tests to infer fracture geometry and flow channeling. We performed a series of thermal tracer tests at different scales in a crystalline rock aquifer at the experimental site of Ploemeur (H+ observatory network). The first type of thermal tracer tests are push-pull tracer tests at different scales. The temporal and spatial scaling of heat recovery, measured from thermal breakthrough curves, shows a clear signature of flow channeling. In particular, the late time tailing of heat recovery under channeled flow is shown to diverge from the T(t) α t-1,5 behavior expected for the classical parallel plate model and follow the scaling T(t) α 1/t(logt)2 for a simple channel modeled as a tube. Flow channeling is also manifested on the spatial scaling of heat recovery as flow channeling affects the decay of the thermal breakthrough peak amplitude and the increase of the peak time with scale. The second type of thermal tracer tests are flow-through tracer tests where a pulse of hot water was injected in a fracture isolated by a double straddle packer while pumping at the same flow rate in another fracture at a distance of about 10 meters to create a dipole flow field. Comparison with a solute tracer test performed under the same conditions also present a clear signature of flow channeling. We derive analytical expressions for the retardation and decay of the thermal breakthrough peak amplitude for different fracture geometries and show that the observed differences between thermal and solute breakthrough can be explained only by channelized flow. These results suggest that heat transport is much more sensitive to fracture heterogeneity and flow

  15. Engineering Solutions to Enhance Traffic Safety Performance on Two-Lane Highways

    Directory of Open Access Journals (Sweden)

    Lina Wu

    2015-01-01

    Full Text Available Improving two-lane highway traffic safety conditions is of practical importance to the traffic system, which has attracted significant research attention within the last decade. Many cost-effective and proactive solutions such as low-cost treatments and roadway safety monitoring programs have been developed to enhance traffic safety performance under prevailing conditions. This study presents research perspectives achieved from the Highway Safety Enhancement Project (HSEP that assessed safety performance on two-lane highways in Beijing, China. Potential causal factors are identified based on proposed evaluation criteria, and primary countermeasures are developed against inferior driving conditions such as sharp curves, heavy gradients, continuous downgrades, poor sight distance, and poor clear zones. Six cost-effective engineering solutions were specifically implemented to improve two-lane highway safety conditions, including (1 traffic sign replacement, (2 repainting pavement markings, (3 roadside barrier installation, (4 intersection channelization, (5 drainage optimization, and (6 sight distance improvement. The effectiveness of these solutions was examined and evaluated based on Empirical Bayes (EB models. The results indicate that the proposed engineering solutions effectively improved traffic safety performance by significantly reducing crash occurrence risks and crash severities.

  16. The effect of high intensity laser propagation instabilities on channel formation in underdense plasmas

    International Nuclear Information System (INIS)

    Najmudin, Z.; Krushelnick, K.; Tatarakis, M.; Clark, E.L.; Danson, C.N.; Malka, V.; Neely, D.; Santala, M.I.K.; Dangor, A.E.

    2003-01-01

    Experiments have been performed using high power laser pulses (up to 50 TW) focused into underdense helium plasmas (n e ≤5x10 19 cm -3 ). Using shadowgraphy, it is observed that the laser pulse can produce irregular density channels, which exhibit features such as long wavelength hosing and 'sausage-like' self-focusing instabilities. This phenomenon is a high intensity effect and the characteristic period of oscillation of these instabilities is typically found to correspond to the time required for ions to move radially out of the region of highest intensity

  17. High Guanidinium Permeability Reveals Dehydration-Dependent Ion Selectivity in the Plasmodial Surface Anion Channel

    Directory of Open Access Journals (Sweden)

    Abdullah A. B. Bokhari

    2014-01-01

    Full Text Available Malaria parasites grow within vertebrate erythrocytes and increase host cell permeability to access nutrients from plasma. This increase is mediated by the plasmodial surface anion channel (PSAC, an unusual ion channel linked to the conserved clag gene family. Although PSAC recognizes and transports a broad range of uncharged and charged solutes, it must efficiently exclude the small Na+ ion to maintain infected cell osmotic stability. Here, we examine possible mechanisms for this remarkable solute selectivity. We identify guanidinium as an organic cation with high permeability into human erythrocytes infected with Plasmodium falciparum, but negligible uptake by uninfected cells. Transport characteristics and pharmacology indicate that this uptake is specifically mediated by PSAC. The rank order of organic and inorganic cation permeabilities suggests cation dehydration as the rate-limiting step in transport through the channel. The high guanidinium permeability of infected cells also allows rapid and stringent synchronization of parasite cultures, as required for molecular and cellular studies of this pathogen. These studies provide important insights into how nutrients and ions are transported via PSAC, an established target for antimalarial drug development.

  18. Method of processing plutonium and uranium solution

    International Nuclear Information System (INIS)

    Otsuka, Katsuyuki; Kondo, Isao; Suzuki, Toru.

    1989-01-01

    Solutions of plutonium nitrate solutions and uranyl nitrate recovered in the solvent extraction step in reprocessing plants and nuclear fuel production plants are applied with low temperature treatment by means of freeze-drying under vacuum into residues containing nitrates, which are denitrated under heating and calcined under reduction into powders. That is, since complicate processes of heating, concentration and dinitration conducted so far for the plutonium solution and uranyl solution are replaced with one step of freeze-drying under vacuum, the process can be simplified significantly. In addition, since the treatment is applied at low temperature, occurrence of corrosion for the material of evaporation, etc. can be prevented. Further, the number of operators can be saved by dividing the operations into recovery of solidification products, supply and sintering of the solutions and vacuum sublimation. Further, since nitrates processed at a low temperature are powderized by heating dinitration, the powderization step can be simplified. The specific surface area and the grain size distribution of the powder is made appropriate and it is possible to obtain oxide powders of physical property easily to be prepared into pellets. (N.H.)

  19. Continuous formation of N-chloro-N,N-dialkylamine solutions in well-mixed meso-scale flow reactors

    Science.gov (United States)

    Jolley, Katherine E

    2015-01-01

    Summary The continuous flow synthesis of a range of organic solutions of N,N-dialkyl-N-chloramines is described using either a bespoke meso-scale tubular reactor with static mixers or a continuous stirred tank reactor. Both reactors promote the efficient mixing of a biphasic solution of N,N-dialkylamine in organic solvent, and aqueous sodium hypochlorite to achieve near quantitative conversions, in 72–100% in situ yields, and useful productivities of around 0.05 mol/h with residence times from 3 to 20 minutes. Initial calorimetric studies have been carried out to inform on reaction exotherms, rates and safe operation. Amines which partition mainly in the organic phase require longer reaction times, provided by the CSTR, to compensate for low mass transfer rates in the biphasic system. The green metrics of the reaction have been assessed and compared to existing procedures and have shown the continuous process is improved over previous procedures. The organic solutions of N,N-dialkyl-N-chloramines produced continuously will enable their use in tandem flow reactions with a range of nucleophilic substrates. PMID:26734089

  20. Continuous formation of N-chloro-N,N-dialkylamine solutions in well-mixed meso-scale flow reactors

    Directory of Open Access Journals (Sweden)

    A. John Blacker

    2015-12-01

    Full Text Available The continuous flow synthesis of a range of organic solutions of N,N-dialkyl-N-chloramines is described using either a bespoke meso-scale tubular reactor with static mixers or a continuous stirred tank reactor. Both reactors promote the efficient mixing of a biphasic solution of N,N-dialkylamine in organic solvent, and aqueous sodium hypochlorite to achieve near quantitative conversions, in 72–100% in situ yields, and useful productivities of around 0.05 mol/h with residence times from 3 to 20 minutes. Initial calorimetric studies have been carried out to inform on reaction exotherms, rates and safe operation. Amines which partition mainly in the organic phase require longer reaction times, provided by the CSTR, to compensate for low mass transfer rates in the biphasic system. The green metrics of the reaction have been assessed and compared to existing procedures and have shown the continuous process is improved over previous procedures. The organic solutions of N,N-dialkyl-N-chloramines produced continuously will enable their use in tandem flow reactions with a range of nucleophilic substrates.

  1. Introduction of performance boosters like Ge as channel material for the future of CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Samia, Slimani, E-mail: slimani.samia@gmail.com [Faculty of Electrical and Computer Engineering Mouloud Mammeri University (UMMTO), BP 17 RP 15000, Tizi-Ouzou (Algeria); Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida (Algeria); Bouaza, Djellouli, E-mail: djelbou@hotmail.fr [University of Saida, Department of Electronic (Algeria); Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida (Algeria)

    2016-06-10

    High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumvent the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.

  2. Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Ng, G. I.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.

    2015-01-01

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In 0.17 Al 0.83 N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W eff ) exhibited a very high I Dmax of 3940 mA/mm and a highest g m of 1417 mS/mm. This dramatic increase of I D and g m in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v e ) of 6.0 × 10 7  cm/s, which is ∼1.89× higher than that of the conventional In 0.17 Al 0.83 N/GaN HEMT (3.17 × 10 7  cm/s). The v e in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v e at 300 K in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v e  = 6 × 10 7  cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In 0.17 Al 0.83 N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications

  3. Comparative study on heat pipe performance using aqueous solutions of alcohols

    Energy Technology Data Exchange (ETDEWEB)

    Senthilkumar, R.; Vaidyanathan, S.; Sivaraman, B. [Annamalai University, Department of Mechanical Engineering, Annamalai Nagar, Tamil Nadu (India)

    2012-12-15

    This paper deals with the performance characterization of heat pipes using an aqueous solution of long chain alcohols like n-Butanol, n-Pentanol, n-Hexanol and n-Heptanol as working mediums. These solutions are called as self-rewetting fluids, since these fluid mixtures possess a non-linear dependence of the surface tension with temperature. A cylindrical heat pipe made up of copper with two layers of wrapped screen is used as a wick material and partially filled with the self-rewetting fluid water mixture and tested for its heat transport capability like thermal efficiency and thermal resistance at different inclinations and input power levels. A number of tests have been performed with heat pipes, filled with various aqueous solutions of alcohols with a concentration of 2 ml/l in de-ionized water (DI water) on volume basis. The results obtained for heat pipes using self rewetting fluids show improved performances, when compared to DI water heat pipes. (orig.)

  4. High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Wei, Nini; Janjua, Bilal; Elafandy, Rami T.; Prabaswara, Aditya; Shen, Chao; Consiglio, Giuseppe B.; Albadri, Abdulrahman; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2016-01-01

    The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

  5. High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

    KAUST Repository

    Zhao, Chao

    2016-11-21

    The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

  6. Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

    Science.gov (United States)

    Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

    1991-10-01

    The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

  7. Performance analysis of subcarrier intensity modulation using rectangular QAM over Malaga turbulence channels with integer and non-integerβ

    KAUST Repository

    Alheadary, Wael Ghazy; Park, Kihong; Alouini, Mohamed-Slim

    2016-01-01

    In this paper, we derive the performances of optical wireless communication system utilizing adaptive subcarrier intensity modulation over the Malaga turbulent channel. More specifically, analytical closed-form solutions and asymptotic results

  8. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Science.gov (United States)

    Yu, Z. X.; Ma, Y. Z.; Zhao, Y. L.; Huang, J. B.; Wang, W. Z.; Moliere, M.; Liao, H. L.

    2017-08-01

    Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P(002). It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the "first principle calculation method" and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have favorable performances to be used as sensitive layer in gas sensing applications.

  9. N=4 supersymmetric Yang Mills scattering amplitudes at high energies. The Regge cut contribution

    International Nuclear Information System (INIS)

    Bartels, J.; Sabio Vera, A.

    2008-07-01

    We further investigate, in N=4 supersymmetric Yang Mills theories, the high energy Regge behavior of six-point scattering amplitudes. In particular, for the new Regge cut contribution found in our previous paper, we compute in the leading logarithmic approximation (LLA) the energy spectrum of the BFKL equation in the color octet channel, and we calculate explicitly the two loop corrections to the discontinuities of the amplitudes for the transitions 2→4 and 3→3. We find an explicit solution of the BFKL equation for the octet channel for arbitrary momentum transfers and investigate the intercepts of the Regge singularities in this channel. As an important result we find that the universal collinear and infrared singularities of the BDS formula are not affected by this Regge-cut contribution. (orig.)

  10. Heat mass transfer in turbulent flow of dissociating N2O4 in a channel of complex geometry

    International Nuclear Information System (INIS)

    Nesterenko, V.B.; Tverkovkin, B.E.; Yakushev, A.P.; Mikryukova, T.I.

    1976-01-01

    The processes of heat and mass transfer at turbulent flow of the N 2 O 4 -dissociating gas along the bundles of fuel elements are investigated. A numerical solution has been obtained by the method of variable directions with the second-order boundary conditions in the following range of parameters: Reinolds number, Re=(0.12-1.73)x10 5 ; pressure, p=45-170 bar; a relative spacing between rods, t=1.05; 1.1; and the gsub(e)rsub(0)/Λsub(f)=(0.2-1.44)x10 5 , where qsub(e) is a specific thermal flux on the rod surface; rsub(0) - a rod radius; Λsub(f)-thermal conductivity of the coolant. The coolant temperature at channel inlet is 450 deg K. Temperature and concentration fields of the O 2 -component are obtained. The effect of pressure on the distribution of temperatures and concentrations of the O 2 -component and their non-uniformity over a perimeter are investigated. The distributions average Nusselt numbers over the channel length versus the pressure of a gaseous mixture are obtained. A significant effect of chemical reactions on heat transfer in the channel of a complicated form is shown

  11. High-Performance Vertical Organic Electrochemical Transistors.

    Science.gov (United States)

    Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

    2018-02-01

    Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Auditory N1 reveals planning and monitoring processes during music performance.

    Science.gov (United States)

    Mathias, Brian; Gehring, William J; Palmer, Caroline

    2017-02-01

    The current study investigated the relationship between planning processes and feedback monitoring during music performance, a complex task in which performers prepare upcoming events while monitoring their sensory outcomes. Theories of action planning in auditory-motor production tasks propose that the planning of future events co-occurs with the perception of auditory feedback. This study investigated the neural correlates of planning and feedback monitoring by manipulating the contents of auditory feedback during music performance. Pianists memorized and performed melodies at a cued tempo in a synchronization-continuation task while the EEG was recorded. During performance, auditory feedback associated with single melody tones was occasionally substituted with tones corresponding to future (next), present (current), or past (previous) melody tones. Only future-oriented altered feedback disrupted behavior: Future-oriented feedback caused pianists to slow down on the subsequent tone more than past-oriented feedback, and amplitudes of the auditory N1 potential elicited by the tone immediately following the altered feedback were larger for future-oriented than for past-oriented or noncontextual (unrelated) altered feedback; larger N1 amplitudes were associated with greater slowing following altered feedback in the future condition only. Feedback-related negativities were elicited in all altered feedback conditions. In sum, behavioral and neural evidence suggests that future-oriented feedback disrupts performance more than past-oriented feedback, consistent with planning theories that posit similarity-based interference between feedback and planning contents. Neural sensory processing of auditory feedback, reflected in the N1 ERP, may serve as a marker for temporal disruption caused by altered auditory feedback in auditory-motor production tasks. © 2016 Society for Psychophysiological Research.

  13. Bit Error Rate Performance Analysis of a Threshold-Based Generalized Selection Combining Scheme in Nakagami Fading Channels

    Directory of Open Access Journals (Sweden)

    Kousa Maan

    2005-01-01

    Full Text Available The severity of fading on mobile communication channels calls for the combining of multiple diversity sources to achieve acceptable error rate performance. Traditional approaches perform the combining of the different diversity sources using either the conventional selective diversity combining (CSC, equal-gain combining (EGC, or maximal-ratio combining (MRC schemes. CSC and MRC are the two extremes of compromise between performance quality and complexity. Some researches have proposed a generalized selection combining scheme (GSC that combines the best branches out of the available diversity resources ( . In this paper, we analyze a generalized selection combining scheme based on a threshold criterion rather than a fixed-size subset of the best channels. In this scheme, only those diversity branches whose energy levels are above a specified threshold are combined. Closed-form analytical solutions for the BER performances of this scheme over Nakagami fading channels are derived. We also discuss the merits of this scheme over GSC.

  14. PERFORMANCE ANALYSIS OF PILOT BASED CHANNEL ESTIMATION TECHNIQUES IN MB OFDM SYSTEMS

    Directory of Open Access Journals (Sweden)

    M. Madheswaran

    2011-12-01

    Full Text Available Ultra wideband (UWB communication is mainly used for short range of communication in wireless personal area networks. Orthogonal Frequency Division Multiplexing (OFDM is being used as a key physical layer technology for Fourth Generation (4G wireless communication. OFDM based communication gives high spectral efficiency and mitigates Inter-symbol Interference (ISI in a wireless medium. In this paper the IEEE 802.15.3a based Multiband OFDM (MB OFDM system is considered. The pilot based channel estimation techniques are considered to analyze the performance of MB OFDM systems over Liner Time Invariant (LTI Channel models. In this paper, pilot based Least Square (LS and Least Minimum Mean Square Error (LMMSE channel estimation technique has been considered for UWB OFDM system. In the proposed method, the estimated Channel Impulse Responses (CIRs are filtered in the time domain for the consideration of the channel delay spread. Also the performance of proposed system has been analyzed for different modulation techniques for various pilot density patterns.

  15. A high-throughput, multi-channel photon-counting detector with picosecond timing

    Science.gov (United States)

    Lapington, J. S.; Fraser, G. W.; Miller, G. M.; Ashton, T. J. R.; Jarron, P.; Despeisse, M.; Powolny, F.; Howorth, J.; Milnes, J.

    2009-06-01

    High-throughput photon counting with high time resolution is a niche application area where vacuum tubes can still outperform solid-state devices. Applications in the life sciences utilizing time-resolved spectroscopies, particularly in the growing field of proteomics, will benefit greatly from performance enhancements in event timing and detector throughput. The HiContent project is a collaboration between the University of Leicester Space Research Centre, the Microelectronics Group at CERN, Photek Ltd., and end-users at the Gray Cancer Institute and the University of Manchester. The goal is to develop a detector system specifically designed for optical proteomics, capable of high content (multi-parametric) analysis at high throughput. The HiContent detector system is being developed to exploit this niche market. It combines multi-channel, high time resolution photon counting in a single miniaturized detector system with integrated electronics. The combination of enabling technologies; small pore microchannel plate devices with very high time resolution, and high-speed multi-channel ASIC electronics developed for the LHC at CERN, provides the necessary building blocks for a high-throughput detector system with up to 1024 parallel counting channels and 20 ps time resolution. We describe the detector and electronic design, discuss the current status of the HiContent project and present the results from a 64-channel prototype system. In the absence of an operational detector, we present measurements of the electronics performance using a pulse generator to simulate detector events. Event timing results from the NINO high-speed front-end ASIC captured using a fast digital oscilloscope are compared with data taken with the proposed electronic configuration which uses the multi-channel HPTDC timing ASIC.

  16. A high-throughput, multi-channel photon-counting detector with picosecond timing

    International Nuclear Information System (INIS)

    Lapington, J.S.; Fraser, G.W.; Miller, G.M.; Ashton, T.J.R.; Jarron, P.; Despeisse, M.; Powolny, F.; Howorth, J.; Milnes, J.

    2009-01-01

    High-throughput photon counting with high time resolution is a niche application area where vacuum tubes can still outperform solid-state devices. Applications in the life sciences utilizing time-resolved spectroscopies, particularly in the growing field of proteomics, will benefit greatly from performance enhancements in event timing and detector throughput. The HiContent project is a collaboration between the University of Leicester Space Research Centre, the Microelectronics Group at CERN, Photek Ltd., and end-users at the Gray Cancer Institute and the University of Manchester. The goal is to develop a detector system specifically designed for optical proteomics, capable of high content (multi-parametric) analysis at high throughput. The HiContent detector system is being developed to exploit this niche market. It combines multi-channel, high time resolution photon counting in a single miniaturized detector system with integrated electronics. The combination of enabling technologies; small pore microchannel plate devices with very high time resolution, and high-speed multi-channel ASIC electronics developed for the LHC at CERN, provides the necessary building blocks for a high-throughput detector system with up to 1024 parallel counting channels and 20 ps time resolution. We describe the detector and electronic design, discuss the current status of the HiContent project and present the results from a 64-channel prototype system. In the absence of an operational detector, we present measurements of the electronics performance using a pulse generator to simulate detector events. Event timing results from the NINO high-speed front-end ASIC captured using a fast digital oscilloscope are compared with data taken with the proposed electronic configuration which uses the multi-channel HPTDC timing ASIC.

  17. N-enriched multilayered porous carbon derived from natural casings for high-performance supercapacitors

    Science.gov (United States)

    Xu, Zongying; Li, Yu; Li, Dandan; Wang, Dawei; Zhao, Jing; Wang, Zhifeng; Banis, Mohammad N.; Hu, Yongfeng; Zhang, Huaihao

    2018-06-01

    In this study, N-enriched multilayered porous activated carbon (LPAC), using natural casings as precursor, was fabricated by a facile carbonization and subsequent KOH activation procedure. The influence of the mass ratio of KOH to carbonized material on pore-structure and surface element composition of LPACs was investigated by a variety of means, such as SEM, HRTEM, BET, Raman, XRD, XPS and XAS. Owing to the unique multilayered texture and nitrogen (N) and oxygen (O) rich feature of natural casings, the resulting LPACs possess interconnected and developed porous structure with N- and O-enriched functional groups, contributing to larger pseudocapacitance. With the rise of mass ratio, the specific surface area (SSA) and average pore size of LPACs increased. The final materials were endowed with a desirable SSA (3100 m2 g-1) and high N content (6.34 at.%). Meanwhile, N- and O-enriched LPAC-4 exhibited a high specific capacitance (307.5 F g-1 at a current density of 0.5 A g-1 in 6 M KOH aqueous solution), excellent rate performance (63.4% capacitance retention at 20 A g-1) and good cycling stability (7.1% capacitance loss after 5000 cycles). Furthermore, the assembled symmetrical supercapacitor (LPAC-4//LPAC-4) with a wide voltage window of 1.4 V delivered a remarkable energy density of 11.6 Wh kg-1 at a power density of 297 W kg-1. These results suggested that unique LPACs derived from natural casings are a promising material for supercapacitors.

  18. Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

    Science.gov (United States)

    Freeman, Jon C.; Mueller, Wolfgang

    2008-01-01

    Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

  19. Towards efficient next generation light sources: combined solution processed and evaporated layers for OLEDs

    Science.gov (United States)

    Hartmann, D.; Sarfert, W.; Meier, S.; Bolink, H.; García Santamaría, S.; Wecker, J.

    2010-05-01

    Typically high efficient OLED device structures are based on a multitude of stacked thin organic layers prepared by thermal evaporation. For lighting applications these efficient device stacks have to be up-scaled to large areas which is clearly challenging in terms of high through-put processing at low-cost. One promising approach to meet cost-efficiency, high through-put and high light output is the combination of solution and evaporation processing. Moreover, the objective is to substitute as many thermally evaporated layers as possible by solution processing without sacrificing the device performance. Hence, starting from the anode side, evaporated layers of an efficient white light emitting OLED stack are stepwise replaced by solution processable polymer and small molecule layers. In doing so different solutionprocessable hole injection layers (= polymer HILs) are integrated into small molecule devices and evaluated with regard to their electro-optical performance as well as to their planarizing properties, meaning the ability to cover ITO spikes, defects and dust particles. Thereby two approaches are followed whereas in case of the "single HIL" approach only one polymer HIL is coated and in case of the "combined HIL" concept the coated polymer HIL is combined with a thin evaporated HIL. These HIL architectures are studied in unipolar as well as bipolar devices. As a result the combined HIL approach facilitates a better control over the hole current, an improved device stability as well as an improved current and power efficiency compared to a single HIL as well as pure small molecule based OLED stacks. Furthermore, emitting layers based on guest/host small molecules are fabricated from solution and integrated into a white hybrid stack (WHS). Up to three evaporated layers were successfully replaced by solution-processing showing comparable white light emission spectra like an evaporated small molecule reference stack and lifetime values of several 100 h.

  20. High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.

    Science.gov (United States)

    Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

    2016-10-07

    Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.

  1. Eco-efficient and high performance hard chrome process

    Energy Technology Data Exchange (ETDEWEB)

    Negre, P. [Protection des Metaux, Montreuil (France)

    2001-07-01

    Clean manufacturing processes that can minimize effects on the environment are discussed using electrolytic hard chromium-plating as an example. The goal of the research proposal described in this paper is to develop processes from a new and non-toxic electrolytic solution that would allow for harder, thick coatings of chromium that is more resistant to corrosion than traditional coatings and without the carcinogenic effects of hexavalent chromium. The process, as envisaged, will combine the advantages of chromium plating processes based on non-toxic compounds already available, the result primarily of the chemical formulation of the solutions for chromium plating on which the microstructure and the capacity of the structural hardening of the coatings depend. The paper provides an overview of the project, estimates person year and time requirements (225 person-years and 3.5 years) and provides a list of participating partners.

  2. A cohesion/tension mechanism explains the gating of water channels (aquaporins) in Chara internodes by high concentration.

    Science.gov (United States)

    Ye, Qing; Wiera, Boguslaw; Steudle, Ernst

    2004-02-01

    Isolated internodes of Chara corallina have been used to study the gating of aquaporins (water channels) in the presence of high concentrations of osmotic solutes of different size (molecular weight). Osmolytes were acetone and three glycol ethers: ethylene glycol monomethyl ether (EGMME), diethylene glycol monomethyl ether (DEGMME), and triethylene glycol monoethyl ether (TEGMEE). The 'osmotic efficiency' of osmolytes was quite different. Their reflection coefficients ranged between 0.15 (acetone), 0.59 (EGMME), 0.78 (DEGMME), and 0.80 (TEGMEE). Bulk water permeability (Lp) and diffusive permeabilities (Ps) of heavy water (HDO), hydrogen peroxide (H2O2), acetone, and glycol ethers (EGMME, DEGMME, and TEGMEE) were measured using a cell pressure probe. Cells were treated with different concentrations of osmotic solutes of up to 800 mM ( approximately 2.0 MPa of osmotic pressure). Inhibition of aquaporin activity increased with both increasing concentration and size of solutes (reflection coefficients). As cell Lp decreased, Ps increased, indicating that water and solutes used different passages across the plasma membrane. Similar to earlier findings of an osmotic gating of ion channels, a cohesion/tension model of the gating of water channels in Chara internodes by high concentration is proposed. According to the model, tensions (negative pressures) within water channels affected the open/closed state by changing the free energy between states and favoured a distorted/collapsed rather than the open state. They should have differed depending on the concentration and size of solutes that are more or less excluded from aquaporins. The bigger the solute, the lower was the concentration required to induce a reversible closure of aquaporins, as predicted by the model.

  3. Impact of Channel, Stress-Relaxed Buffer, and S/D Si1- x Ge x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

    Science.gov (United States)

    Othman, Nurul Aida Farhana; Hatta, Sharifah Fatmadiana Wan Muhamad; Soin, Norhayati

    2018-04-01

    Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of stressors—channel stress, stress-relaxed buffer (SRB), and source/drain (S/D) epitaxial stress—on different bases of FinFET, specifically silicon germanium (SiGe) and Ge-based, whereby the latter is achieved by manipulating the Ge mole fraction inside the three layers; their effects on the devices' figures-of-merits were recorded. The simulation generates an advanced calibration process, by which the drift diffusion simulation was adopted for ballistic transport effects. The results show that current enhancement in p-type FinFET (p-FinFET) with 110% is almost twice that in n-type FinFET (n-FinFET) with 57%, with increasing strain inside the channel suggesting that the use of strain is more effective for holes. In SiGe-based n-FinFET, the use of a high-strained SRB layer can improve the drive current up to 112%, while the high-strain S/D epitaxial for Ge-based p-FinFET can enhance the on-state current to 262%. Further investigations show that the channel and S/D doping are affecting the performances of SiGe-based FinFET with similar importance. It is observed that doping concentrations play an important role in threshold voltage adjustment as well as in drive current and subthreshold leakage improvements.

  4. Simple solution-processed CuOX as anode buffer layer for efficient organic solar cells

    International Nuclear Information System (INIS)

    Shen, Wenfei; Yang, Chunpeng; Bao, Xichang; Sun, Liang; Wang, Ning; Tang, Jianguo; Chen, Weichao; Yang, Renqiang

    2015-01-01

    Graphical abstract: - Highlights: • Simple solution-processed CuO X hole transport layer for efficient organic solar cell. • Good photovoltaic performances as hole transport layer in OSCs with P3HT and PBDTTT-C as donor materials. • The device with CuO X as hole transport layer shows great improved stability compared with that of device with PEDOT:PSS as hole transport layer. - Abstract: A simple, solution-processed ultrathin CuO X anode buffer layer was fabricated for high performance organic solar cells (OSCs). XPS measurement demonstrated that the CuO X was the composite of CuO and Cu 2 O. The CuO X modified ITO glass exhibit a better surface contact with the active layer. The photovoltaic performance of the devices with CuO X layer was optimized by varying the thickness of CuO X films through changing solution concentration. With P3HT:PC 61 BM as the active layer, we demonstrated an enhanced PCE of 4.14% with CuO X anode buffer layer, compared with that of PEDOT:PSS layer. The CuO X layer also exhibits efficient photovoltaic performance in devices with PBDTTT-C:PC 71 BM as the active layer. The long-term stability of CuO X device is better than that of PEDOT:PSS device. The results indicate that the easy solution-processed CuO X film can act as an efficient anode buffer layer for high-efficiency OSCs

  5. Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Wei, Nini; Prabaswara, Aditya; Alias, Mohd Sharizal; Janjua, Bilal; Shen, Chao; Ooi, Boon S.

    2016-01-01

    High-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrate. The LEDs exhibited a low turn-on voltage of ~2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm2) at ~5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector and heat-sink, which greatly simplifies the fabrication process of high-power light emitters. Our work ushers in a practical platform for high-power nanowires light emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.

  6. Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters

    KAUST Repository

    Zhao, Chao

    2016-01-08

    High-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrate. The LEDs exhibited a low turn-on voltage of ~2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm2) at ~5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector and heat-sink, which greatly simplifies the fabrication process of high-power light emitters. Our work ushers in a practical platform for high-power nanowires light emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.

  7. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  8. A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Park, Mun-Soo; Na, Inmook; Wie, Chu R.

    2005-01-01

    n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement

  9. Interactions Between Channel Topography and Hydrokinetic Turbines: Sediment Transport, Turbine Performance, and Wake Characteristics

    Science.gov (United States)

    Hill, Craig Steven

    Accelerating marine hydrokinetic (MHK) renewable energy development towards commercial viability requires investigating interactions between the engineered environment and its surrounding physical and biological environments. Complex and energetic hydrodynamic and morphodynamic environments desired for such energy conversion installations present difficulties for designing efficient yet robust sustainable devices, while permitting agency uncertainties regarding MHK device environmental interactions result in lengthy and costly processes prior to installing and demonstrating emerging technologies. A research program at St. Anthony Falls Laboratory (SAFL), University of Minnesota, utilized multi-scale physical experiments to study the interactions between axial-flow hydrokinetic turbines, turbulent open channel flow, sediment transport, turbulent turbine wakes, and complex hydro-morphodynamic processes in channels. Model axial-flow current-driven three-bladed turbines (rotor diameters, dT = 0.15m and 0.5m) were installed in open channel flumes with both erodible and non-erodible substrates. Device-induced local scour was monitored over several hydraulic conditions and material sizes. Synchronous velocity, bed elevation and turbine performance measurements provide an indication into the effect channel topography has on device performance. Complimentary experiments were performed in a realistic meandering outdoor research channel with active sediment transport to investigate device interactions with bedform migration and secondary turbulent flow patterns in asymmetric channel environments. The suite of experiments undertaken during this research program at SAFL in multiple channels with stationary and mobile substrates under a variety of turbine configurations provides an in-depth investigation into how axial-flow hydrokinetic devices respond to turbulent channel flow and topographic complexity, and how they impact local and far-field sediment transport characteristics

  10. Enhancement of dental x-ray images by two channel image processing

    International Nuclear Information System (INIS)

    Mitra, S.; Yu, T.H.

    1991-01-01

    In this paper, the authors develop a new algorithm for the enhancement of low-contrast details of dental X-ray images using a two channel structure. The algorithm first decomposes an input image in the frequency domain into two parts by filtering: one containing the low frequency components and the other containing the high frequency components. Then these parts are enhanced separately using a transform magnitude modifier. Finally a contrast enhanced image is formed by combining these two processed pats. The performance of the proposed algorithm is illustrated through enhancement of dental X-ray images. The algorithm can be easily implemented on a personal computer

  11. Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

    Science.gov (United States)

    Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

    2017-06-01

    The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Two-dimensional numerical simulation of the effect of single event burnout for n-channel VDMOSFET

    International Nuclear Information System (INIS)

    Guo Hongxia; Chen Yusheng; Wang Wei; Zhao Jinlong; Zhang Yimen; Zhou Hui

    2004-01-01

    2D MEDICI simulator is used to investigate the effect of Single Event Burnout (SEB) for n-channel power VDMOSFETs. The simulation results are consistent with experimental results which have been published. The simulation results are of great interest for a better understanding of the occurrence of events. The effects of the minority carrier lifetime in the base region, the base width and the emitter doping density on SEB susceptibility are verified. Some hardening solutions to SEB are provided. The work shows that the 2D simulator MEDICI is an useful tool for burnout prediction and for the evaluation of hardening solutions. (authors)

  13. Synthesis of robust and high-performance aquaporin-based biomimetic membranes by interfacial polymerization-membrane preparation and RO performance characterization

    DEFF Research Database (Denmark)

    Zhao, Yang; Qiu, Changquan; Li, Xuesong

    2012-01-01

    -free ABMs that can be easily scaled up. In the current study, a thin film composite (TFC) ABM was prepared by the interfacial polymerization method, where AquaporinZ-containing proteoliposomes were added to the m-phenylene-diamine aqueous solution. Control membranes, either without aquaporins......Aquaporins are water channel proteins with excellent water permeability and solute rejection, which makes them promising for preparing high-performance biomimetic membranes. Despite the growing interest in aquaporin-based biomimetic membranes (ABMs), it is challenging to produce robust and defect...... or with inactive (mutant) aquaporins, were also similarly prepared. The separation performance of these membranes was evaluated by cross-flow reverse osmosis (RO) tests. Compared to the controls, the active ABM achieved significantly higher water permeability (∼4L/m2hbar) with comparable NaCl rejection (∼97...

  14. Thermal Performance of a Dual-Channel, Helium-Cooled, Tungsten Heat Exchanger

    International Nuclear Information System (INIS)

    Youchison, Dennis L.; North, Mart T.

    2000-01-01

    Helium-cooled, refractory heat exchangers are now under consideration for first wall and divertor applications. These refractory devices take advantage of high temperature operation with large delta-Ts to effectively handle high heat fluxes. The high temperature helium can then be used in a gas turbine for high-efficiency power conversion. Over the last five years, heat removal with helium was shown to increase dramatically by using porous metal to provide a very large effective surface area for heat transfer in a small volume. Last year, the thermal performance of a bare-copper, dual-channel, helium-cooled, porous metal divertor mock-up was evaluated on the 30 kW Electron Beam Test System at Sandia National Laboratories. The module survived a maximum absorbed heat flux of 34.6 MW/m 2 and reached a maximum surface temperature of 593 C for uniform power loading of 3 kW absorbed on a 2-cm 2 area. An impressive 10 kW of power was absorbed on an area of 24 cm 2 . Recently, a similar dual-module, helium-cooled heat exchanger made almost entirely of tungsten was designed and fabricated by Thermacore, Inc. and tested at Sandia. A complete flow test of each channel was performed to determine the actual pressure drop characteristics. Each channel was equipped with delta-P transducers and platinum RTDs for independent calorimetry. One mass flow meter monitored the total flow to the heat exchanger, while a second monitored flow in only one of the channels. The thermal response of each tungsten module was obtained for heat fluxes in excess of 5 MW/m 2 using 50 C helium at 4 MPa. Fatigue cycles were also performed to assess the fracture toughness of the tungsten modules. A description of the module design and new results on flow instabilities are also presented

  15. Performance analysis of power-efficient adaptive interference cancelation in fading channels

    KAUST Repository

    Radaydeh, Redha Mahmoud Mesleh; Alouini, Mohamed-Slim

    2010-01-01

    This paper analyzes the performance of a -steering scheme for highly correlated receive antennas in the presence of statistically unordered co-channel interferers over multipath fading channels. An adaptive activation of receive antennas according to the interfering signals fading conditions is considered in the analysis. Analytical expressions for various system performance measures, including the outage probability, average error probability of different signaling schemes, and raw moments of the combined signal-to-interference-plus-noise ratio (SINR) are obtained in exact forms. Numerical and simulation results for the performance-complexity tradeoff of this scheme is presented and then compared with that of full-size arbitrary interference cancelation and no cancelation scenarios. ©2010 IEEE.

  16. Performance analysis of power-efficient adaptive interference cancelation in fading channels

    KAUST Repository

    Radaydeh, Redha Mahmoud Mesleh

    2010-12-01

    This paper analyzes the performance of a -steering scheme for highly correlated receive antennas in the presence of statistically unordered co-channel interferers over multipath fading channels. An adaptive activation of receive antennas according to the interfering signals fading conditions is considered in the analysis. Analytical expressions for various system performance measures, including the outage probability, average error probability of different signaling schemes, and raw moments of the combined signal-to-interference-plus-noise ratio (SINR) are obtained in exact forms. Numerical and simulation results for the performance-complexity tradeoff of this scheme is presented and then compared with that of full-size arbitrary interference cancelation and no cancelation scenarios. ©2010 IEEE.

  17. Processing bulk natural wood into a high-performance structural material

    Science.gov (United States)

    Song, Jianwei; Chen, Chaoji; Zhu, Shuze; Zhu, Mingwei; Dai, Jiaqi; Ray, Upamanyu; Li, Yiju; Kuang, Yudi; Li, Yongfeng; Quispe, Nelson; Yao, Yonggang; Gong, Amy; Leiste, Ulrich H.; Bruck, Hugh A.; Zhu, J. Y.; Vellore, Azhar; Li, Heng; Minus, Marilyn L.; Jia, Zheng; Martini, Ashlie; Li, Teng; Hu, Liangbing

    2018-02-01

    Synthetic structural materials with exceptional mechanical performance suffer from either large weight and adverse environmental impact (for example, steels and alloys) or complex manufacturing processes and thus high cost (for example, polymer-based and biomimetic composites). Natural wood is a low-cost and abundant material and has been used for millennia as a structural material for building and furniture construction. However, the mechanical performance of natural wood (its strength and toughness) is unsatisfactory for many advanced engineering structures and applications. Pre-treatment with steam, heat, ammonia or cold rolling followed by densification has led to the enhanced mechanical performance of natural wood. However, the existing methods result in incomplete densification and lack dimensional stability, particularly in response to humid environments, and wood treated in these ways can expand and weaken. Here we report a simple and effective strategy to transform bulk natural wood directly into a high-performance structural material with a more than tenfold increase in strength, toughness and ballistic resistance and with greater dimensional stability. Our two-step process involves the partial removal of lignin and hemicellulose from the natural wood via a boiling process in an aqueous mixture of NaOH and Na2SO3 followed by hot-pressing, leading to the total collapse of cell walls and the complete densification of the natural wood with highly aligned cellulose nanofibres. This strategy is shown to be universally effective for various species of wood. Our processed wood has a specific strength higher than that of most structural metals and alloys, making it a low-cost, high-performance, lightweight alternative.

  18. High performance in software development

    CERN Multimedia

    CERN. Geneva; Haapio, Petri; Liukkonen, Juha-Matti

    2015-01-01

    What are the ingredients of high-performing software? Software development, especially for large high-performance systems, is one the most complex tasks mankind has ever tried. Technological change leads to huge opportunities but challenges our old ways of working. Processing large data sets, possibly in real time or with other tight computational constraints, requires an efficient solution architecture. Efficiency requirements span from the distributed storage and large-scale organization of computation and data onto the lowest level of processor and data bus behavior. Integrating performance behavior over these levels is especially important when the computation is resource-bounded, as it is in numerics: physical simulation, machine learning, estimation of statistical models, etc. For example, memory locality and utilization of vector processing are essential for harnessing the computing power of modern processor architectures due to the deep memory hierarchies of modern general-purpose computers. As a r...

  19. Action of insecticidal N-alkylamides at site 2 of the voltage-sensitive sodium channel

    International Nuclear Information System (INIS)

    Ottea, J.A.; Payne, G.T.; Soderlund, D.M.

    1990-01-01

    Nine synthetic N-alkylamides were examined as inhibitors of the specific binding of [ 3 H]batrachotoxinin A 20α-benzoate ([ 3 H]BTX-B) to sodium channels and as activators of sodium uptake in mouse brain synaptoneurosomes. In the presence of scorpion (Leiurus quinquestriatus) venom, the six insecticidal analogues were active as both inhibitors of [ 3 H]BTX-B binding and stimulators of sodium uptake. These findings are consistent with an action of these compounds at the alkaloid activator recognition site (site 2) of the voltage-sensitive sodium channel. The three noninsecticidal N-alkylamides also inhibited [ 3 H]BTX-B binding but were ineffective as activators of sodium uptake. Concentration-response studies revealed that some of the insecticidal amides also enhanced sodium uptake through a second, high-affinity interaction that does not involve site 2, but this secondary effect does not appear to be correlated with insecticidal activity. The activities of N-alkylamides as sodium channel activators were influenced by the length of the alkenyl chain and the location of unsaturation within the molecule. These results further define the actions of N-alkylamides on sodium channels and illustrate the significance of the multiple binding domains of the sodium channel as target sites for insect control agents

  20. Combined high-performance liquid chromatography/32P-postlabeling assay of N7-methyldeoxyguanosine

    International Nuclear Information System (INIS)

    Shields, P.G.; Povey, A.C.; Wilson, V.L.; Weston, A.; Harris, C.C.

    1990-01-01

    A highly sensitive and specific assay for the detection of N7-methyl-2'-deoxyguanosine (N7methyldG) has been developed by combining high-performance liquid chromatography, 32 P-postlabeling, and nucleotide chromatography. Separation of normal nucleotides and adducts by high-performance liquid chromatography and then combining a portion of 2'-deoxyguanosine to the N7methyldG allows for quantitation using an internal standard. The directly determined molar ratio is not subject to errors in digestion, variable ATP-specific activity, or assumptions in relative adduct-labeling efficiency. The detection limit was one N7methyldG adduct in 10(7) unmodified 2'-deoxyguanosine bases. N7methyldG adducts have been detected in 5 human lung samples in which O6-methyl-2'-deoxyguanosine adducts had been previously determined. The mean ratio of N7methyldG to O6-methyl-2'-deoxyguanosine was determined to be approximately 10. The current assay complements the high-performance liquid chromatography/ 32 P-postlabeling assay for O6-methyl-2'-deoxyguanosine and increases the detection sensitivity of DNA methylated by exogenous alkylating agents

  1. Low-Complexity Interference-Free Downlink Channel Assignment with Improved Performance in Coordinated Small Cells

    KAUST Repository

    Radaydeh, Redha M.

    2015-05-01

    This paper proposes a low-complexity interference-free channel assignment scheme with improved desired downlink performance in coordinated multi-antenna small-coverage access points (APs) that employ the open-access control strategy. The adopted system treats the case when each user can be granted an access to one of the available channels at a time. Moreover, each receive terminal can suppress a limited number of resolvable interfering sources via its highly-correlated receive array. On the other hand, the operation of the deployed APs can be coordinated to serve active users, and the availability of multiple physical channels and the use of uncorrelated transmit antennas at each AP are exploited to improve the performance of supported users. The analysis provides new approaches to use the transmit antenna array at each AP, the multiple physical channels, the receive antenna array at each user in order to identify interference-free channels per each user, and then to select a downlink channel that provides the best possible improved performance. The event of concurrent interference-free channel identification by different users is also treated to further improve the desired link associated with the scheduled user. The analysis considers the practical scenario of imperfect identification of interference-free channel by an active user and/or the imperfectness in scheduling concurrent users requests on the same channel. The developed formulations can be used to study any performance metric and they are applicable for any statistical and geometric channel models. © 2015 IEEE.

  2. Processing of indium (III solutions via ion exchange with Lewatit K-2621 resin

    Directory of Open Access Journals (Sweden)

    López Díaz-Pavón, Adrián

    2014-06-01

    Full Text Available The processing of indium(III-hydrochloric acid solutions by the cationic ion exchange Lewatit K-2621 resin has been investigated. The influence of several variables such as the hydrochloric acid and metal concentrations in the aqueous solution and the variation of the amount of resin added has been studied. Moreover, a kinetic study performed in the uptake of indium(III by Lewatit K-2621, shows that either the film-diffusion and the particle-diffusion models fit the ion exchange process onto the resin, depending upon the initial metal concentration in the aqueous solution. The loaded resin could be eluted by HCl solutions at 20 °C.Se ha investigado el tratamiento de disoluciones de ácido clorhídrico conteniendo indio(III mediante la resina de cambio catiónico Lewatit K-2621. Las variables ensayadas han sido las concentraciones de ácido y de metal en la disolución acuosa y la cantidad de resina empleada en el tratamiento de dichas disoluciones. Asimismo, se ha llevado a cabo un estudio cinético del proceso de intercambio catiónico entre el indio(III y la resina Lewatit K-2621. Este estudio muestra que el proceso de intercambio responde a un mecanismo de difusión en la disolución o en la partícula de resina dependiendo de la concentración inicial del metal en el medio acuoso. El metal cargado en la resina puede ser eluido con disoluciones de ácido clorhídrico a 20 °C.

  3. Development of a Highly Efficient Hybrid White Organic-Light-Emitting Diode with a Single Emission Layer by Solution Processing.

    Science.gov (United States)

    Wu, Jun-Yi; Chen, Show-An

    2018-02-07

    We use a mixed host, 2,6-bis[3-(carbazol-9-yl)phenyl]pyridine blended with 20 wt % tris(4-carbazoyl-9-ylphenyl)amine, to lower the hole-injection barrier, along with the bipolar and high-photoluminescence-quantum-yield (Φ p = 84%), blue thermally activated delay fluorescence (TADF) material of 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) as a blue dopant to compose the emission layer for the fabrication of a TADF blue organic-light-emitting diode (BOLED). The device is highly efficient with the following performance parameters: maximum brightness (B max ) = 57586 cd/m 2 , maximum current efficiency (CE max ) = 35.3 cd/A, maximum power efficiency (PE max ) = 21.4 lm/W, maximum external quantum efficiency (EQE max ) = 14.1%, and CIE coordinates (0.18, 0.42). This device has the best performance recorded among the reported solution-processed TADF BOLEDs and has a low efficiency roll-off: at brightness values of 1000 and 5000 cd/m 2 , its CEs are close, being 35.1 and 30.1 cd/A, respectively. Upon further doping of the red phosphor Ir(dpm)PQ 2 (emission peak λ max = 595 nm) into the blue emission layer, we obtained a TADF-phosphor hybrid white organic-light-emitting diode (T-P hybrid WOLED) with high performance: B max = 43594 cd/m 2 , CE max = 28.8 cd/A, PE max = 18.1 lm/W, and CIE coordinates (0.38, 0.44). This B max = 43594 cd/m 2 is better than that of the vacuum-deposited WOLED with a blue TADF emitter, 10000 cd/m 2 . This is also the first report on a T-P hybrid WOLED with a solution-processed emitting layer.

  4. The development of shock wave overpressure driven by channel expansion of high current impulse discharge arc

    Science.gov (United States)

    Xiong, Jia-ming; Li, Lee; Dai, Hong-yu; Wu, Hai-bo; Peng, Ming-yang; Lin, Fu-chang

    2018-03-01

    During the formation of a high current impulse discharge arc, objects near the discharge arc will be strongly impacted. In this paper, a high power, high current gas switch is used as the site of the impulse discharge arc. The explosion wave theory and the arc channel energy balance equation are introduced to analyze the development of the shock wave overpressure driven by the high current impulse discharge arc, and the demarcation point of the arc channel is given, from which the energy of the arc channel is no longer converted into shock waves. Through the analysis and calculation, it is found that the magnitude of the shock wave overpressure caused by impulse discharge arc expansion is closely related to the arc current rising rate. The arc shock wave overpressure will undergo a slow decay process and then decay rapidly. The study of this paper will perform the function of deepening the understanding of the physical nature of the impulse arc discharge, which can be used to explain the damage effect of the high current impulse discharge arc.

  5. Solution-processed single-wall carbon nanotube transistor arrays for wearable display backplanes

    Directory of Open Access Journals (Sweden)

    Byeong-Cheol Kang

    2018-01-01

    Full Text Available In this paper, we demonstrate solution-processed single-wall carbon nanotube thin-film transistor (SWCNT-TFT arrays with polymeric gate dielectrics on the polymeric substrates for wearable display backplanes, which can be directly attached to the human body. The optimized SWCNT-TFTs without any buffer layer on flexible substrates exhibit a linear field-effect mobility of 1.5cm2/V-s and a threshold voltage of around 0V. The statistical plot of the key device metrics extracted from 35 SWCNT-TFTs which were fabricated in different batches at different times conclusively support that we successfully demonstrated high-performance solution-processed SWCNT-TFT arrays which demand excellent uniformity in the device performance. We also investigate the operational stability of wearable SWCNT-TFT arrays against an applied strain of up to 40%, which is the essential for a harsh degree of strain on human body. We believe that the demonstration of flexible SWCNT-TFT arrays which were fabricated by all solution-process except the deposition of metal electrodes at process temperature below 130oC can open up new routes for wearable display backplanes.

  6. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    KAUST Repository

    Hanna, Amir

    2014-09-01

    Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \\\\(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.

  7. Sedimentary processes of the lower Monterey Fan channel and channel-mouth lobe

    Science.gov (United States)

    Klaucke, I.; Masson, D.G.; Kenyon, Neil H.; Gardner, J.V.

    2004-01-01

    The distribution of deposits, sediment transport pathways and processes on the lower Monterey Fan channel and channel-mouth lobe (CML) are studied through the integration of GLORIA and TOBI sidescan sonar data with 7-kHz subbottom profiler records and sediment cores for ground-truthing. The lower Monterey channel is characterised by an up to 30-m-deep channel with poorly developed levees and alternating muddy and silty muddy overbank deposits. The channel is discontinuous, disappearing where gradients are less than about 1:350. Ground-truthing of the large CML shows that the entire CML is characterised by widespread deposits of generally fine sand, with coarser sand at the base of turbidites. Sand is particularly concentrated in finger-like areas of low-backscatter intensity and is interpreted as the result of non-turbulent sediment-gravity flows depositing metres thick massive, fine sand. TOBI sidescan sonar data reveal recent erosional features in the form of scours, secondary channels, large flow slides, and trains of blocks at the distal end of the CML. Erosion is probably related to increasing gradient as the CML approaches Murray Fracture zone and to differential loading of sandy submarine fan deposits onto pelagic clays. Reworking of older flow slides by sediment transport processes on the lobe produces trains of blocks that are several metres in diameter and aligned parallel to the flow direction. ?? 2004 Elsevier B.V. All rights reserved.

  8. Fluvial processes and channel morphometry of the upper Orashi ...

    African Journals Online (AJOL)

    Fluvial processes and channel morphometry of the upper Orashi basin in ... of channel equilibrium between morphology and hydrology, the Orashi channel is not well ... Drainage basins, watershed morphology, morphometric analysis, Nigeria ...

  9. Non destructive testing of uranium in solution using a portable optical fiber photometer

    International Nuclear Information System (INIS)

    Boisde, Gilbert; Guillot, Philippe; Monier, Jean; Perez, J.J.

    1983-01-01

    The portable instrument, called TELEPHOT 3 N, has be following main characteristics: - regulated light source, - optical fibers used as a light vector, - an optical probe fitted with a mirror immersed in the solution, - optical system with interference filters to balance the three measurement channels, - analog and digital absorbance measurement electronic, - associated microcomputer for automatic data acquisition and processing. The parameters and computer programs were determined by a series of measurements taken on reference solutions covering the target ranges. A mathematical model showing uranium complexes in solution leads to the solution of second degree equation. A first degree equation is sufficient for low acidities. This unit -hardware and programs- has been qualified on different uranyl nitrate solutions subject to nuclear materials control. The small minimum quantities of product required, about 25 ml, and the short response time of around 1 minute, wake at a highly practical instrument for check measurements during inspection proceedings. Similar remote measurements is planned during inspection for the glove box control of plutonium solutions. This spectrophotometry technique can be adapted for the process control of industrial solutions [fr

  10. A speech processing study using an acoustic model of a multiple-channel cochlear implant

    Science.gov (United States)

    Xu, Ying

    1998-10-01

    A cochlear implant is an electronic device designed to provide sound information for adults and children who have bilateral profound hearing loss. The task of representing speech signals as electrical stimuli is central to the design and performance of cochlear implants. Studies have shown that the current speech- processing strategies provide significant benefits to cochlear implant users. However, the evaluation and development of speech-processing strategies have been complicated by hardware limitations and large variability in user performance. To alleviate these problems, an acoustic model of a cochlear implant with the SPEAK strategy is implemented in this study, in which a set of acoustic stimuli whose psychophysical characteristics are as close as possible to those produced by a cochlear implant are presented on normal-hearing subjects. To test the effectiveness and feasibility of this acoustic model, a psychophysical experiment was conducted to match the performance of a normal-hearing listener using model- processed signals to that of a cochlear implant user. Good agreement was found between an implanted patient and an age-matched normal-hearing subject in a dynamic signal discrimination experiment, indicating that this acoustic model is a reasonably good approximation of a cochlear implant with the SPEAK strategy. The acoustic model was then used to examine the potential of the SPEAK strategy in terms of its temporal and frequency encoding of speech. It was hypothesized that better temporal and frequency encoding of speech can be accomplished by higher stimulation rates and a larger number of activated channels. Vowel and consonant recognition tests were conducted on normal-hearing subjects using speech tokens processed by the acoustic model, with different combinations of stimulation rate and number of activated channels. The results showed that vowel recognition was best at 600 pps and 8 activated channels, but further increases in stimulation rate and

  11. Photosensitive N channel MOSFET device on silicon on sapphire substrate

    International Nuclear Information System (INIS)

    Le Goascoz, V.; Borel, J.

    1975-01-01

    An anomalous behavior of the N channel output current characteristic in a SOS MOSFET with a floating bulk is described. Such a phenomenon can be used in a photosensitive device with internal gain. Such devices can be used on SOS substrates to achieve integrated circuits with high insulating voltages and data transmission by optical means [fr

  12. Comparison of the monotonic and cyclic mechanical properties of ultrafine-grained low carbon steels processed by continuous and conventional equal channel angular pressing

    International Nuclear Information System (INIS)

    Niendorf, T.; Böhner, A.; Höppel, H.W.; Göken, M.; Valiev, R.Z.; Maier, H.J.

    2013-01-01

    Highlights: ► UFG low-carbon steel was successfully processed by continuous ECAP-Conform. ► Continuously processed UFG steel shows high performance. ► High monotonic strength and good ductility. ► Microstructural stability under cyclic loading in the LCF regime. ► Established concepts can be used for predicting the properties. - Abstract: In the current study the mechanical properties of ultra-fine grained low carbon steel processed by conventional equal channel angular pressing and a continuous equal channel angular pressing-Conform process were investigated. Both monotonic and cyclic properties were determined for the steel in either condition and found to be very similar. Microstructural analyses employing electron backscatter diffraction were used for comparison of the low carbon steels processed by either technique. Both steels feature very similar grain sizes and misorientation angle distributions. With respect to fatigue life the low carbon steel investigated shows properties similar to ultra-fine grained interstitial-free steel processed by conventional equal channel angular pressing, and thus, the general fatigue behavior can be addressed following the same routines as proposed for interstitial-free steel. In conclusion, the continuously processed material exhibits very promising properties, and thus, equal channel angular pressing-Conform is a promising tool for production of ultra-fine grained steels in a large quantity

  13. Ion channeling

    International Nuclear Information System (INIS)

    Erramli, H.; Blondiaux, G.

    1994-01-01

    Channeling phenomenon was predicted, many years ago, by stark. The first channeling experiments were performed in 1963 by Davies and his coworkers. Parallely Robinson and Oen have investigated this process by simulating trajectories of ions in monocrystals. This technique has been combined with many methods like Rutherford Backscattering Spectrometry (R.B.S.), Particles Induced X-rays Emission (P.I.X.E) and online Nuclear Reaction (N.R.A.) to localize trace elements in the crystal or to determine crystalline quality. To use channeling for material characterization we need data about the stopping power of the incident particle in the channeled direction. The ratios of channeled to random stopping powers of silicon for irradiation in the direction have been investigated and compared to the available theoretical results. We describe few applications of ion channeling in the field of materials characterization. Special attention is given to ion channeling combined with Charged Particle Activation Analysis (C.P.A.A.) for studying the behaviour of oxygen atoms in Czochralski silicon lattices under the influence of internal gettering and in different gaseous atmospheres. Association between ion channeling and C.P.A.A was also utilised for studying the influence of the growing conditions on concentration and position of carbon atoms at trace levels in the MOVPE Ga sub (1-x) Al sub x lattice. 6 figs., 1 tab., 32 refs. (author)

  14. AlGaN Channel Transistors for Power Management and Distribution

    Science.gov (United States)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  15. Regret of Multi-Channel Bandit Game in Cognitive Radio Networks

    Directory of Open Access Journals (Sweden)

    Ma Jun

    2016-01-01

    Full Text Available The problem of how to evaluate the rate of convergence to Nash equilibrium solutions in the process of channel selection under incomplete information is studied. In this paper, the definition of regret is used to reflect the convergence rates of online algorithms. The process of selecting an idle channel for each secondary user is modeled as a multi-channel bandit game. The definition of the maximal averaged regret is given. Two existing online learning algorithms are used to obtain the Nash equilibrium for each SU. The maximal averaged regrets are used to evaluate the performances of online algorithms. When there is a pure strategy Nash equilibrium in the multi-channel bandit game, the maximal averaged regrets are finite. A cooperation mechanism is also needed in the process of calculating the maximal averaged regrets. Simulation results show the maximal averaged regrets are finite and the online algorithm with greater convergence rate has less maximal averaged regrets.

  16. Solution-processed n-ZnO nanorod/p-Co_3O_4 nanoplate heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Kim, Jong-Woo; Lee, Su Jeong; Biswas, Pranab; Lee, Tae Il; Myoung, Jae-Min

    2017-01-01

    Highlights: • The n-ZnO nanorods were epitaxially grown on p-Co_3O_4 nanoplates. • The heteroepitaxial p-n junction was fabricated by using hydrothermal process. • The LEDs emitted reddish-orange and violet light related to ZnO point defects. • The Co_3O_4 nanoplates function as a hole injection layer. • Junction between 1D NRs and 2D NPs provides a new approach to design nanostructures. - Abstract: A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co_3O_4) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co_3O_4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn_i) to oxygen interstitials (O_i) or conduction-band minimum (CBM) to oxygen vacancies (V_O), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn_i to zinc vacancies (V_Z_n).

  17. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

  18. High-level waste processing and conditioning: vitrification

    International Nuclear Information System (INIS)

    Bonniaud, R.

    1981-02-01

    The vitrification process used to treat fission product solutions at the Marcoule Vitrification Plant is described. The type of waste processed is characterized by its very high activity and the long lifetimes of some of the emitters that it contains. The performance obtained with this process is given together with the future developments envisaged. The storage of glasses is described as well as their behavior with time [fr

  19. Adaptive Space-Time, Processing for High Performance, Robust Military Wireless Communications

    National Research Council Canada - National Science Library

    Haimovich, Alexander

    2000-01-01

    ...: (I) performance of adaptive arrays for wireless communications over fading channels in the presence of cochannel interference particularly the case when the number of interference sources exceeds...

  20. Reconfigurable high-speed optical fibre networks: Optical wavelength conversion and switching using VCSELs to eliminate channel collisions

    Science.gov (United States)

    Boiyo, Duncan Kiboi; Chabata, T. V.; Kipnoo, E. K. Rotich; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-01-01

    We experimentally provide an alternative solution to channel collisions through up-wavelength conversion and switching by using vertical cavity surface-emitting lasers (VCSELs). This has been achieved by utilizing purely optical wavelength conversion on VCSELs at the low attenuation, 1550 nm transmission window. The corresponding transmission and bit error-rate (BER) performance evaluation is also presented. In this paper, two 1550 nm VCSELs with 50-150 GHz channel spacing are modulated with a 10 Gb/s NRZ PRBS 27-1 data and their interferences investigated. A channel interference penalty range of 0.15-1.63 dB is incurred for 150-50 GHz channel spacing without transmission. To avoid channel collisions and to minimize high interference penalties, the transmitting VCSEL with data is injected into the side-mode of a slave VCSEL to obtain a new up converted wavelength. A 16 dB extinction ratio of the incoming wavelength is achieved when a 15 dBm transmitting beam is injected into the side-mode of a -4.5 dBm slave VCSEL. At 8.5 Gb/s, a 1.1 dB conversion and a 0.5 dB transmission penalties are realized when the converted wavelength is transmitted over a 24.7 km G.655 fibre. This work offers a low-cost, effective wavelength conversion and channel switching to reduce channel collision probability by reconfiguring channels at the node of networks.

  1. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-01-01

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

  2. Numerical modelling of channel processes and analysis of possible channel improvement measures on the Lena River near city Yakutsk

    Science.gov (United States)

    Krylenko, Inna; Belikov, Vitaly; Zavadskii, Aleksander; Borisova, Natalya; Golovlyov, Pavel; Rumyantsev, Alexey

    2017-04-01

    City Yakutsk (administrative, culture and industrial center of the North East of Russia) situated on the left bank of large Russian river Lena last decades has faced with many problems, concerning intensive channel processes. Most dramatic among them are sediment accumulation near main water intake structure, supplying city Yakutsk by the drinking water, and deterioration in conditions of the navigation roots to the main city ports. Hydrodynamic modelling has been chosen as the main tool for analyses of the modern tendencies in channel processes and for the evaluation of possible channel improvement measures efficiency. STREAM_2D program complex (authors V. Belikov et al.), which is based on the numerical solution of two-dimensional Saint-Venant equations on a hybrid curvilinear quadrangular and rectangular mesh and take into account sediment transport, was used for the simulations. Detailed field data about water regime of the Lena river, bathymetry of the channels and topography of the floodplains was collected for model developing. Model area has covered 75 km of the Lena river valley including branched channels and wide floodplain from Tabaga to Kangalassy gauge cites. Data of these stations were used for model boundary conditions assigning. Data of gauge station city Yakutsk as well as measured during field campaign water levels and flow velocities was taken into account for model calibration and validation. Results of modelling has demonstrated close correspondence with observed water levels and discharges distribution between channel branches for different hydrological situations. Different combinations of hydrographs of 1, 10, 50% exceedance probability was used as input for modelling of channel deformations. Simulation results has shown that in future 10 years aligning of water discharges distribution between main Lena river branches near Yakutsk is possible, that is a positive tendency from the point of view of water supply of the city. More than 15

  3. TARGET: A multi-channel digitizer chip for very-high-energy gamma-ray telescopes

    Energy Technology Data Exchange (ETDEWEB)

    Bechtol, K.; Funk, S.; /Stanford U., HEPL /KIPAC, Menlo Park; Okumura, A.; /JAXA, Sagamihara /Stanford U., HEPL /KIPAC, Menlo Park; Ruckman, L.; /Hawaii U.; Simons, A.; Tajima, H.; Vandenbroucke, J.; /Stanford U., HEPL /KIPAC, Menlo Park; Varner, G.; /Hawaii U.

    2011-08-11

    The next-generation very-high-energy (VHE) gamma-ray observatory, the Cherenkov Telescope Array, will feature dozens of imaging atmospheric Cherenkov telescopes (IACTs), each with thousands of pixels of photosensors. To be affordable and reliable, reading out such a mega-channel array requires event recording technology that is highly integrated and modular, with a low cost per channel. We present the design and performance of a chip targeted to this application: the TeV Array Readout with GSa/s sampling and Event Trigger (TARGET). This application-specific integrated circuit (ASIC) has 16 parallel input channels, a 4096-sample buffer for each channel, adjustable input termination, self-trigger functionality, and tight window-selected readout. We report the performance of TARGET in terms of sampling frequency, power consumption, dynamic range, current-mode gain, analog bandwidth, and cross talk. The large number of channels per chip allows a low cost per channel ($10 to $20 including front-end and back-end electronics but not including photosensors) to be achieved with a TARGET-based IACT readout system. In addition to basic performance parameters of the TARGET chip itself, we present a camera module prototype as well as a second-generation chip (TARGET 2), both of which have been produced.

  4. Performance comparison of hybrid resistive switching devices based on solution-processable nanocomposites

    Science.gov (United States)

    Rajan, Krishna; Roppolo, Ignazio; Bejtka, Katarzyna; Chiappone, Annalisa; Bocchini, Sergio; Perrone, Denis; Pirri, Candido Fabrizio; Ricciardi, Carlo; Chiolerio, Alessandro

    2018-06-01

    The present work compares the influence of different polymer matrices on the performance of planar asymmetric Resistive Switching Devices (RSDs) based on silver nitrate and Ionic Liquid (IL). PolyVinyliDene Fluoride-HexaFluoroPropylene (PVDF-HFP), PolyEthylene Oxide (PEO), PolyMethyl MethAcrylate (PMMA) and a blend of PVDF-HFP and PEO were used as matrices and compared. RSDs represent perhaps the most promising electron device to back the More than Moore development, and our approach through functional polymers enables low temperature processing and gives compatibility towards flexible/stretchable/wearable equipment. The switching mechanism in all the four sample families is explained by means of a filamentary conduction. A huge difference in the cyclability and the On/Off ratio is experienced when changing the active polymers and explained based on the polymer crystallinity degree and general morphology of the prepared nanocomposite. It is worth noting that all the RSDs discussed here present good switching behaviour with reasonable endurance. The current study displays one of the most cost-effective and effortless ways to produce an RSD based on solution-processable materials.

  5. Tree-indexed processes: a high level crossing analysis

    Directory of Open Access Journals (Sweden)

    Mark Kelbert

    2003-01-01

    Full Text Available Consider a branching diffusion process on R1 starting at the origin. Take a high level u>0 and count the number R(u,n of branches reaching u by generation n. Let Fk,n(u be the probability P(R(u,nn(u=Fk(u. More precisely, a natural equation for the probabilities Fk(u is introduced and the structure of the set of solutions is analysed. We interpret Fk(u as a potential ruin probability in the situation of a multiple choice of a decision taken at vertices of a ‘logical tree’. It is shown that, unlike the standard risk theory, the above equation has a manifold of solutions. Also an analogue of Lundberg's bound for branching diffusion is derived.

  6. The Channel Estimation and Modeling in High Altitude Platform Station Wireless Communication Dynamic Network

    Directory of Open Access Journals (Sweden)

    Xiaoyang Liu

    2017-01-01

    Full Text Available In order to analyze the channel estimation performance of near space high altitude platform station (HAPS in wireless communication system, the structure and formation of HAPS are studied in this paper. The traditional Least Squares (LS channel estimation method and Singular Value Decomposition-Linear Minimum Mean-Squared (SVD-LMMS channel estimation method are compared and investigated. A novel channel estimation method and model are proposed. The channel estimation performance of HAPS is studied deeply. The simulation and theoretical analysis results show that the performance of the proposed method is better than the traditional methods. The lower Bit Error Rate (BER and higher Signal Noise Ratio (SNR can be obtained by the proposed method compared with the LS and SVD-LMMS methods.

  7. {sup 17}O({alpha},{gamma}){sup 21}Ne and {sup 17}O({alpha},n){sup 20}Ne for the weak s process

    Energy Technology Data Exchange (ETDEWEB)

    Best, A.; Goerres, J.; Beard, M.; Couder, M.; Boer, R. de; Falahat, S.; Gueray, R. T.; Kontos, A.; Kratz, K.-L.; LeBlanc, P. J.; Li, Q.; O' Brien, S.; Oezkan, N.; Pignatari, M.; Sonnabend, K.; Talwar, R.; Tan, W.; Uberseder, E.; Wiescher, M. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States) and Department for Biogeochemistry, Max-Planck-Institute for Chemistry, 55020 Mainz (Germany); Department of Physics, Kacaeli University, Umuttepe 41380, Kocaeli (Turkey); Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Department for Biogeochemistry, Max-Planck-Institute for Chemistry, 55020 Mainz (Germany); Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Department of Physics, Kacaeli University, Umuttepe 41380, Kocaeli (Turkey); Department of Physics, University of Basel, Basel 4056 (Switzerland); Institute for Applied Physics, Goethe-University Frankfurt, 60325 Frankfurt (Germany); Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States)

    2012-11-20

    The ratio of the reaction rates of the competing channels {sup 17}O({alpha}{gamma}){sup 21}Ne and {sup 17}O({alpha},n){sup 20}Ne determines the efficiency of {sup 16}O as a neutron poison in the s process in low metallicity rotating stars. It has a large impact on the element production, either producing elements to the mass range of A=90 in case of a significant poisoning effect or extending the mass range up to the region of A=150 if the {gamma} channel is of negligible strength. We present an improved study of the reaction {sup 17}O({alpha},n){sup 20}Ne, including an independent measurement of the {sup 17}O({alpha},n{sub 1}){sup 20}Ne channel. A simultaneous R-Matrix fit to both the n{sub 0} and the n{sub 1} channels has been performed. New reaction rates, including recent data on the {sup 17}O({alpha},{gamma}){sup 21}Ne reaction, have been calculated and used as input for stellar network calculations and their impact on the s process in rotating massive stars is discussed.

  8. New Potentiometric Wireless Chloride Sensors Provide High Resolution Information on Chemical Transport Processes in Streams

    Directory of Open Access Journals (Sweden)

    Keith Smettem

    2017-07-01

    Full Text Available Quantifying the travel times, pathways, and dispersion of solutes moving through stream environments is critical for understanding the biogeochemical cycling processes that control ecosystem functioning. Validation of stream solute transport and exchange process models requires data obtained from in-stream measurement of chemical concentration changes through time. This can be expensive and time consuming, leading to a need for cheap distributed sensor arrays that respond instantly and record chemical transport at points of interest on timescales of seconds. To meet this need we apply new, low-cost (in the order of a euro per sensor potentiometric chloride sensors used in a distributed array to obtain data with high spatial and temporal resolution. The application here is to monitoring in-stream hydrodynamic transport and dispersive mixing of an injected chemical, in this case NaCl. We present data obtained from the distributed sensor array under baseflow conditions for stream reaches in Luxembourg and Western Australia. The reaches were selected to provide a range of increasingly complex in-channel flow patterns. Mid-channel sensor results are comparable to data obtained from more expensive electrical conductivity meters, but simultaneous acquisition of tracer data at several positions across the channel allows far greater spatial resolution of hydrodynamic mixing processes and identification of chemical ‘dead zones’ in the study reaches.

  9. Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Arulkumaran, S., E-mail: SArulkumaran@pmail.ntu.edu.sg; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L. [Temasek Laboratories@NTU, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553 (Singapore); Ng, G. I., E-mail: eging@ntu.edu.sg [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Shoron, O. F.; Rajan, S. [Electrical and Computer Engineering Department, The Ohio State University, Columbus, Ohio 43210 (United States); Bin Dolmanan, S.; Tripathy, S. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-02-02

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaN HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.

  10. High performance thin-film composite forward osmosis membrane.

    Science.gov (United States)

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A; Schiffman, Jessica D; Elimelech, Menachem

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 mum) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m(2-)h(-1), while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution.

  11. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

  12. DETAILS OF OPERATIONS PERFORMED BY THE REMOTE CONTROL ROBOT (CONCEPT TO THE HORIZONTAL FUEL CHANNEL DURING DECOMMISSIONING PHASE OF NUCLEAR REACTOR CALANDRIA STRUCTURE. PART II: INSIDE OPERATIONS

    Directory of Open Access Journals (Sweden)

    Constantin POPESCU

    2017-05-01

    Full Text Available The authors contribution to this paper is to present a concept solution of a remote control robot (RCR used for decommissioning of the horizontal fuel channels pressure tube in the CANDU nuclear reactor. In this paper the authors highlight few details of geometry, operations, constraints by kinematics and dynamics of the robot movement inside of the reactor fuel channel. Inside operations performed has as the main steps of dismantling process the followings: unblock and extract the channel closure plug (from End Fitting - EF, unblock and extract the channel shield plug (from Lattice Tube - LT, cut the ends of the pressure tube, extract the pressure tube and cut it in small parts, sorting and storage extracted items in the safe robot container. All steps are performed in automatic mode. The remote control robot (RCR represents a safety system controlled by sensors and has the capability to analyze any error registered and decide next activities or abort the inside decommissioning procedure in case of any risk rise in order to ensure the environmental and workers protection.

  13. Reusable Object-Oriented Solutions for Numerical Simulation of PDEs in a High Performance Environment

    Directory of Open Access Journals (Sweden)

    Andrea Lani

    2006-01-01

    Full Text Available Object-oriented platforms developed for the numerical solution of PDEs must combine flexibility and reusability, in order to ease the integration of new functionalities and algorithms. While designing similar frameworks, a built-in support for high performance should be provided and enforced transparently, especially in parallel simulations. The paper presents solutions developed to effectively tackle these and other more specific problems (data handling and storage, implementation of physical models and numerical methods that have arisen in the development of COOLFluiD, an environment for PDE solvers. Particular attention is devoted to describe a data storage facility, highly suitable for both serial and parallel computing, and to discuss the application of two design patterns, Perspective and Method-Command-Strategy, that support extensibility and run-time flexibility in the implementation of physical models and generic numerical algorithms respectively.

  14. Fabrication of High-performance Sm-Fe-N isotropic bulk magnets by a combination of High-pressure compaction and current sintering

    Energy Technology Data Exchange (ETDEWEB)

    Takagi, Kenta, E-mail: k-takagi@aist.go.jp [Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560 (Japan); Nakayama, Hiroyuki; Ozaki, Kimihiro; Kobayashi, Keizo [Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560 (Japan)

    2012-04-15

    TbCu{sub 7}-type Sm-Fe-N coarse powders in the flake form were consolidated without a bonding medium using a low-thermal-load process of current sintering combined with high-pressure compression. When compacted at 1.2 GPa, the relative density of the powder was increased by 80% with close stacking of the flake particles. Although the subsequent current heating was only briefly performed at a low temperature of 400 Degree-Sign C to avoid decomposition, the compact was consolidated into a rigid bulk in which the particles were bonded at the atomic level. Finally, by using cyclic compaction, this process produced bulk magnets with a density of 92% that exhibited the highest maximum energy product (BH)max of 16.2 MGOe, which surpasses that of conventional isotropic Sm-Fe-N bond magnets. - Highlights: Black-Right-Pointing-Pointer We conduct a consolidation of Sm{sub 1}Fe{sub 7}N bulk magnets without thermal decomposition. Black-Right-Pointing-Pointer Rapid current sintering with high-pressure compaction is used as a low-thermal-load process. Black-Right-Pointing-Pointer In this process, sintering occurs at a temperature of 400 Degree-Sign C, which is below the decomposition point. Black-Right-Pointing-Pointer As a result, bulk magnets with a density of over 92% are obtained without decomposition. Black-Right-Pointing-Pointer These magnets exhibit the highest (BH)max (16.2 MGOe) among isotropic Sm-Fe-N magnets.

  15. Fertilizer drawn forward osmosis process for sustainable water reuse to grow hydroponic lettuce using commercial nutrient solution

    KAUST Repository

    Chekli, Laura

    2017-03-10

    This study investigated the sustainable reuse of wastewater using fertilizer drawn forward osmosis (FDFO) process through osmotic dilution of commercial nutrient solution for hydroponics, a widely used technique for growing plants without soil. Results from the bench-scale experiments showed that the commercial hydroponic nutrient solution (i.e. solution containing water and essential nutrients) exhibited similar performance (i.e., water flux and reverse salt flux) to other inorganic draw solutions when treating synthetic wastewater. The use of hydroponic solution is highly advantageous since it provides all the required macro- (i.e., N, P and K) and micronutrients (i.e., Ca, Mg, S, Mn, B, Zn and Mo) in a single balanced solution and can therefore be used directly after dilution without the need to add any elements. After long-term operation (i.e. up to 75% water recovery), different physical cleaning methods were tested and results showed that hydraulic flushing can effectively restore up to 75% of the initial water flux while osmotic backwashing was able to restore the initial water flux by more than 95%; illustrating the low-fouling potential of the FDFO process. Pilot-scale studies demonstrated that the FDFO process is able to produce the required nutrient concentration and final water quality (i.e., pH and conductivity) suitable for hydroponic applications. Coupling FDFO with pressure assisted osmosis (PAO) in the later stages could help in saving operational costs (i.e., energy and membrane replacement costs). Finally, the test application of nutrient solution produced by the pilot FDFO process to hydroponic lettuce showed similar growth pattern as the control without any signs of nutrient deficiency.

  16. A novel conductive-polymer-based integration process for high-performance flip-chip packages

    Science.gov (United States)

    Lohokare, Saurabh

    Conductive polymers have recently attracted considerable attention for low-temperature fabrication of lead-free, reworkable, and flexible flip-chip interconnects. Using these materials, I demonstrate in this thesis a process that enables low-cost and high-resolution flip-chip interconnects using conventional micro-fabrication techniques. This fabrication process offers improved performance as compared to conventional flip-chip techniques, such as screen-printing, and allows for definition of interconnects with excellent surface uniformity and control over the bump profile. In order to demonstrate the utility and wide applicability of this process, several test implementations that serve as case studies were investigated. Specifically, novel InGaAsSb avalanche photodiodes (APDs), operating around lambda = 2m and targeted for free-space communication and biomedical spectroscopy applications, were fabricated and flip-chip-integrated to test the static electrical characteristics of the polymer bumps. Additionally, the dynamic electrical performance characteristics of the polymer bumps were studied by using AlGaAsSb/AlGaSb p-i-n photodetectors as a case study. The fabrication of these photodetectors, operating around lambda = 1.55mum and targeted for optical communication applications, was accomplished using a customized inductively coupled plasma (ICP) etch process that resulted in a low dark current and excellent speed (3dB bandwidth of 10GHz) and, responsivity (60% external quantum efficiency) characteristics. Furthermore, flip-chip integration was used to demonstrate a three-dimensional, point-to-point micro-optical interconnect, which was 2.33mm-long in a system 15.27mm3 in volume. Lastly, high-speed parallel optical interconnects were demonstrated using polymer-flip-chip-integrated 10GHz vertical-cavity surface-emitting laser (VCSEL) and DOEs. Such interconnects offer the ability to alleviate the communication bottleneck that is projected to occur in future, high-performance

  17. Advancing Replicable Solutions for High-Performance Homes in the Southeast

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, S. G. [Partnership for Home Innovation, Upper Marlboro, MD (United States). Southface Energy Inst.; Sweet, M. L. [Partnership for Home Innovation, Upper Marlboro, MD (United States). Southface Energy Inst.; Francisco, A. [Partnership for Home Innovation, Upper Marlboro, MD (United States). Southface Energy Inst.

    2016-03-01

    The work presented in this report advances the goals of the U.S. Department of Energy Building America program by improving the energy performance of affordable and market-rate housing. Southface Energy Institute (Southface), part of the U.S. Department of Energy Building America research team Partnership for Home Innovation, worked with owners and builders with various market constraints and ultimate goals for three projects in three climate zones (CZs): Savannah Gardens in Savannah, Georgia (CZ 2); JMC Patrick Square in Clemson, South Carolina (CZ 3); and LaFayette in LaFayette, Georgia (CZ 4). This report documents the design process, computational energy modeling, construction, envelope performance metrics, long-term monitoring results, and successes and failures of the design and execution of these high-performance homes.

  18. Fractional Factorial Design Study on the Performance of GAC-Enhanced Electrocoagulation Process Involved in Color Removal from Dye Solutions

    Directory of Open Access Journals (Sweden)

    Iuliana Gabriela Breaban

    2013-07-01

    Full Text Available The aim of this study was to determine the effects of main factors and interactions on the color removal performance from dye solutions using the electrocoagulation process enhanced by adsorption on Granular Activated Carbon (GAC. In this study, a mathematical approach was conducted using a two-level fractional factorial design (FFD for a given dye solution. Three textile dyes: Acid Blue 74, Basic Red 1, and Reactive Black 5 were used. Experimental factors used and their respective levels were: current density (2.73 or 27.32 A/m2, initial pH of aqueous dye solution (3 or 9, electrocoagulation time (20 or 180 min, GAC dose (0.1 or 0.5 g/L, support electrolyte (2 or 50 mM, initial dye concentration (0.05 or 0.25 g/L and current type (Direct Current—DC or Alternative Pulsed Current—APC. GAC-enhanced electrocoagulation performance was analyzed statistically in terms of removal efficiency, electrical energy, and electrode material consumptions, using modeling polynomial equations. The statistical significance of GAC dose level on the performance of GAC enhanced electrocoagulation and the experimental conditions that favor the process operation of electrocoagulation in APC regime were determined. The local optimal experimental conditions were established using a multi-objective desirability function method.

  19. Fractional Factorial Design Study on the Performance of GAC-Enhanced Electrocoagulation Process Involved in Color Removal from Dye Solutions.

    Science.gov (United States)

    Secula, Marius Sebastian; Cretescu, Igor; Cagnon, Benoit; Manea, Liliana Rozemarie; Stan, Corneliu Sergiu; Breaban, Iuliana Gabriela

    2013-07-10

    The aim of this study was to determine the effects of main factors and interactions on the color removal performance from dye solutions using the electrocoagulation process enhanced by adsorption on Granular Activated Carbon (GAC). In this study, a mathematical approach was conducted using a two-level fractional factorial design ( FFD ) for a given dye solution. Three textile dyes: Acid Blue 74, Basic Red 1, and Reactive Black 5 were used. Experimental factors used and their respective levels were: current density (2.73 or 27.32 A/m²), initial pH of aqueous dye solution (3 or 9), electrocoagulation time (20 or 180 min), GAC dose (0.1 or 0.5 g/L), support electrolyte (2 or 50 mM), initial dye concentration (0.05 or 0.25 g/L) and current type (Direct Current- DC or Alternative Pulsed Current- APC ). GAC-enhanced electrocoagulation performance was analyzed statistically in terms of removal efficiency, electrical energy, and electrode material consumptions, using modeling polynomial equations. The statistical significance of GAC dose level on the performance of GAC enhanced electrocoagulation and the experimental conditions that favor the process operation of electrocoagulation in APC regime were determined. The local optimal experimental conditions were established using a multi-objective desirability function method.

  20. Performance Characteristics of a PEM Fuel Cell with Parallel Flow Channels at Different Cathode Relative Humidity Levels

    Directory of Open Access Journals (Sweden)

    Sang Soon Hwang

    2009-11-01

    Full Text Available In fuel cells flow configuration and operating conditions such as cell temperature, humidity at each electrode and stoichiometric number are very crucial for improving performance. Too many flow channels could enhance the performance but result in high parasite loss. Therefore a trade-off between pressure drop and efficiency of a fuel cell should be considered for optimum design. This work focused on numerical simulation of the effects of operating conditions, especially cathode humidity, with simple micro parallel flow channels. It is known that the humidity at the cathode flow channel becomes very important for enhancing the ion conductivity of polymer membrane because fully humidified condition was normally set at anode. To investigate the effect of humidity on the performance of a fuel cell, in this study humidification was set to 100% at the anode flow channel and was changed by 0–100% at the cathode flow channel. Results showed that the maximum power density could be obtained under 60% humidified condition at the cathode where oxygen concentration was moderately high while maintaining high ion conductivity at a membrane.

  1. Purex process operation and performance, 1970 Thoria Campaign

    International Nuclear Information System (INIS)

    Jackson, R.R.; Walser, R.L.

    1977-03-01

    The Hanford Purex Plant fulfilled a 1970 commitment to the Atomic Energy Commission to produce 360 kilograms of high purity 233 U as uranyl nitrate solution. Overall plant performance during both 1970 and 1966 confirmed the suitability of Purex for processing thorium on a campaign basis. The 1970 processing campaign, including flushing operations, is discussed with particular emphasis on problem areas. Background information on the process and equipment used is also presented. The organizations and their designations described are those existing in 1970

  2. Effects of heat and water transport on the performance of polymer electrolyte membrane fuel cell under high current density operation

    International Nuclear Information System (INIS)

    Tabuchi, Yuichiro; Shiomi, Takeshi; Aoki, Osamu; Kubo, Norio; Shinohara, Kazuhiko

    2010-01-01

    Key challenges to the acceptance of polymer electrolyte membrane fuel cells (PEMFCs) for automobiles are the cost reduction and improvement in its power density for compactness. In order to get the solution, the further improvement in a fuel cell performance is required. In particular, under higher current density operation, water and heat transport in PEMFCs has considerable effects on the cell performance. In this study, the impact of heat and water transport on the cell performance under high current density was investigated by experimental evaluation of liquid water distribution and numerical validation. Liquid water distribution in MEA between rib and channel area is evaluated by neutron radiography. In order to neglect the effect of liquid water in gas channels and reactant species concentration distribution in the flow direction, the differential cell was used in this study. Experimental results suggested that liquid water under the channel was dramatically changed with rib/channel width. From the numerical study, it is found that the change of liquid water distribution was significantly affected by temperature distribution in MEA between rib and channel area. In addition, not only heat transport but also water transport through the membrane also significantly affected the cell performance under high current density operation.

  3. Waste processing of chemical cleaning solutions

    International Nuclear Information System (INIS)

    Peters, G.A.

    1991-01-01

    This paper reports on chemical cleaning solutions containing high concentrations of organic chelating wastes that are difficult to reduce in volume using existing technology. Current methods for evaporating low-level radiative waste solutions often use high maintenance evaporators that can be costly and inefficient. The heat transfer surfaces of these evaporators are easily fouled, and their maintenance requires a significant labor investment. To address the volume reduction of spent, low-level radioactive, chelating-based chemical cleaning solutions, ECOSAFE Liquid Volume Reduction System (LVRS) has been developed. The LVRS is based on submerged combustion evaporator technology that was modified for treatment of low-level radiative liquid wastes. This system was developed in 1988 and was used to process 180,000 gallons of waste at Oconee Nuclear Station

  4. On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Emelianov, A. V., E-mail: emmsowton@gmail.com; Romashkin, A. V.; Tsarik, K. A. [National Research University of Electronic Technology (MIET) (Russian Federation); Nasibulin, A. G. [Skolkovo Institute of Science and Technology (Russian Federation); Nevolin, V. K.; Bobrinetskiy, I. I. [National Research University of Electronic Technology (MIET) (Russian Federation)

    2017-04-15

    This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga{sup +} ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm{sup 2}/(V s) at an on/off current ratio of 5 × 10{sup 2}.

  5. High-Z organic-scintillation solution

    International Nuclear Information System (INIS)

    Berlman, I.B.; Fluornoy, J.M.; Ashford, C.B.; Lyons, P.B.

    1983-01-01

    In the present experiment, an attempt is made to raise the average Z of a scintillation solution with as little attendant quenching as possible. Since high-Z atoms quench by means of a close encounter, such encounters are minimized by the use of alkyl groups substituted on the solvent, solute, and heavy atoms. The aromatic compound 1,2,4-trimethylbenzene (pseudocumene) is used as the solvent; 4,4''-di(5-tridecyl)-p-terphenyl (SC-180) as the solute; and tetrabutyltin as the high-Z material. To establish the validity of our ideas, various experiments have been performed with less protected solvents, and heavy atoms. These include benzene, toluene, p-terphenyl, bromobutane, and bromobenzene

  6. On limits of Wireless Communications in a Fading Environment: a General Parameterization Quantifying Performance in Fading Channel

    Directory of Open Access Journals (Sweden)

    Amit Grover

    2014-08-01

    Full Text Available The reliable services along with high throughput can be achieved by using wireless communication systems. These systems also provides a wide coverage because of their features, no doubt MIMO Communication System [1] is one among them. Features provided by these systems ensure the improved system coverage and increased data transmission rate by considering multiple numbers of transmitter and receiver antennas. In this article, the concept of equalization has been considered and finally the performance of the MIMO Systems in Rician flat fading [5] channel is compared with the Rayleigh flat fading channel. It has also been observed that the performance of these Systems in Rician Flat Fading Channel is the best as compare to the Rayleigh Flat Fading Channel [10]. It has been concluded that the successive interference methods provide better performance as compare to others, but their complexity is high. Simulation results shows that ML provides the better performance in comparison to other equalizers but Sphere decoder provides the best performance.

  7. Measure Guideline: Three High Performance Mineral Fiber Insulation Board Retrofit Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Neuhauser, K. [Building Science Corporation, Westford, MA (United States)

    2015-01-01

    This Measure Guideline describes a high performance enclosure retrofit package that uses mineral fiber insulation board, and is intended to serve contractors and designers seeking guidance for non-foam exterior insulation retrofit processes. The guideline describes retrofit assembly and details for wood frame roof and walls and for cast concrete foundations.

  8. Nitrification and N2O production processes in soil incubations after ammonium fertilizer application at high concentrations

    Science.gov (United States)

    Deppe, Marianna; Well, Reinhard; Giesemann, Anette; Flessa, Heinz

    2016-04-01

    High concentrations of ammonium as they occur, e.g., after point-injection of ammonium fertilizer solution according to the CULTAN fertilization technique may retard nitrification. Potential advantages in comparison to conventional fertilization include a higher N efficiency of crops, reduced nitrate leaching, and lower N2O and N2 emissions. Dynamics of nitrification due to plant uptake and dilution processes, leading to decreasing ammonium concentrations in fertilizer depots, has only poorly been studied before. Furthermore, there is little information about the relative contribution of different N2O production processes under these conditions. To elucidate the process dynamics a laboratory incubation study was conducted. After fertilization with ammonium sulfate at 5 levels (from 0 to 5000 mg NH4+-N kg-1; 20mg NO3--N kg-1 each), sandy loam soil was incubated in dynamic soil microcosms for 21 days. N2O, CH4 and CO2 fluxes as well as isotope signatures of N2O and, at three dates, NO3- and NH4+ were measured. To identify N2O production processes, acetylene inhibition (0.01 vol.%), 15N tracer approaches, and isotopomer data (15N site preference and δ18O) were used. N2O emissions were highest at 450mg NH4+-N kg-1 and declined with further increasing concentrations. At 5000 mg NH4+-N kg-1 nitrification was completely inhibited. However, approximately 90% of N2O production was inhibited by acetylene application, and there was no change in the relative contribution of nitrification and denitrification to N2O production with N level. Applying the non-equilibrium technique to our 15N tracer data revealed heterogeneous distribution of denitrification in soil, with at least two distinct NO3- pools, and spatial separation of NO3- formation and consumption. In comparison with the acetylene inhibition and 15N tracer approaches the results of the isotopomer approach were reasonable and indicated substantial contribution of nitrifier-denitrification (10-40%) to total N2O

  9. 8-Channel acquisition system for Time-Correlated Single-Photon Counting.

    Science.gov (United States)

    Antonioli, S; Miari, L; Cuccato, A; Crotti, M; Rech, I; Ghioni, M

    2013-06-01

    Nowadays, an increasing number of applications require high-performance analytical instruments capable to detect the temporal trend of weak and fast light signals with picosecond time resolution. The Time-Correlated Single-Photon Counting (TCSPC) technique is currently one of the preferable solutions when such critical optical signals have to be analyzed and it is fully exploited in biomedical and chemical research fields, as well as in security and space applications. Recent progress in the field of single-photon detector arrays is pushing research towards the development of high performance multichannel TCSPC systems, opening the way to modern time-resolved multi-dimensional optical analysis. In this paper we describe a new 8-channel high-performance TCSPC acquisition system, designed to be compact and versatile, to be used in modern TCSPC measurement setups. We designed a novel integrated circuit including a multichannel Time-to-Amplitude Converter with variable full-scale range, a D∕A converter, and a parallel adder stage. The latter is used to adapt each converter output to the input dynamic range of a commercial 8-channel Analog-to-Digital Converter, while the integrated DAC implements the dithering technique with as small as possible area occupation. The use of this monolithic circuit made the design of a scalable system of very small dimensions (95 × 40 mm) and low power consumption (6 W) possible. Data acquired from the TCSPC measurement are digitally processed and stored inside an FPGA (Field-Programmable Gate Array), while a USB transceiver allows real-time transmission of up to eight TCSPC histograms to a remote PC. Eventually, the experimental results demonstrate that the acquisition system performs TCSPC measurements with high conversion rate (up to 5 MHz/channel), extremely low differential nonlinearity (<0.04 peak-to-peak of the time bin width), high time resolution (down to 20 ps Full-Width Half-Maximum), and very low crosstalk between channels.

  10. Reducing Channel Interaction Through Cochlear Implant Programming May Improve Speech Perception

    Directory of Open Access Journals (Sweden)

    Julie A. Bierer

    2016-06-01

    Full Text Available Speech perception among cochlear implant (CI listeners is highly variable. High degrees of channel interaction are associated with poorer speech understanding. Two methods for reducing channel interaction, focusing electrical fields, and deactivating subsets of channels were assessed by the change in vowel and consonant identification scores with different program settings. The main hypotheses were that (a focused stimulation will improve phoneme recognition and (b speech perception will improve when channels with high thresholds are deactivated. To select high-threshold channels for deactivation, subjects’ threshold profiles were processed to enhance the peaks and troughs, and then an exclusion or inclusion criterion based on the mean and standard deviation was used. Low-threshold channels were selected manually and matched in number and apex-to-base distribution. Nine ears in eight adult CI listeners with Advanced Bionics HiRes90k devices were tested with six experimental programs. Two, all-channel programs, (a 14-channel partial tripolar (pTP and (b 14-channel monopolar (MP, and four variable-channel programs, derived from these two base programs, (c pTP with high- and (d low-threshold channels deactivated, and (e MP with high- and (f low-threshold channels deactivated, were created. Across subjects, performance was similar with pTP and MP programs. However, poorer performing subjects (scoring  2. These same subjects showed slightly more benefit with the reduced channel MP programs (5 and 6. Subjective ratings were consistent with performance. These finding suggest that reducing channel interaction may benefit poorer performing CI listeners.

  11. Solution-Processed Environmentally Friendly Ag2S Colloidal Quantum Dot Solar Cells with Broad Spectral Absorption

    Directory of Open Access Journals (Sweden)

    Viktor A. Öberg

    2017-10-01

    Full Text Available A facile heat-up synthesis route is used to synthesize environmentally friendly Ag2S colloidal quantum dots (CQDs that are applied as light absorbing material in solid state p-i-n junction solar cell devices. The as-synthesized Ag2S CQDs have an average size of around 3.5 nm and exhibit broad light absorption covering ultraviolet, visible, and near infrared wavelength regions. The solar cell devices are constructed with a device architecture of FTO/TiO2/Ag2S CQDs/hole transport material (HTM /Au using a solution-processed approach. Different HTMs, N2,N2,N2′,N2′,N7,N7,N7′,N7′-octakis(4-methoxyphenyl-9,9′-spirobi(9H-fluorene-2,2′,7,7′ tetramine (spiro-OMeTAD, poly(3-hexylthiophene-2,5-diyl (P3HT, and poly((2,3-bis(3-octyloxyphenyl-5,8-quinoxalinediyl-2,5-thiophenediyl TQ1 are studied for maximizing the device photovoltaic performance. The solar cell device with P3HT as a hole transport material gives the highest performance and the solar cell exhibit broad spectral absorption. These results indicate that Ag2S CQD have high potential for utilization as environmentally friendly light absorbing materials for solar cell application and that the hole transport material is critical to maximize the solar cell photovoltaic performance.

  12. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  13. Practices and Processes of Leading High Performance Home Builders in the Upper Midwest

    Energy Technology Data Exchange (ETDEWEB)

    Von Thoma, Ed [Univ. of Minnesota, St. Paul, MN (United States). NorthernSTAR Building America Partnership; Ojzcyk, Cindy [Univ. of Minnesota, St. Paul, MN (United States). NorthernSTAR Building America Partnership

    2012-12-01

    The NorthernSTAR Building America Partnership team proposed this study to gain insight into the business, sales, and construction processes of successful high performance builders. The knowledge gained by understanding the high performance strategies used by individual builders, as well as the process each followed to move from traditional builder to high performance builder, will be beneficial in proposing more in-depth research to yield specific action items to assist the industry at large transform to high performance new home construction. This investigation identified the best practices of three successful high performance builders in the upper Midwest. In-depth field analysis of the performance levels of their homes, their business models, and their strategies for market acceptance were explored.

  14. Controlling solution-phase polymer aggregation with molecular weight and solvent additives to optimize polymer-fullerene bulk heterojunction solar cells

    KAUST Repository

    Bartelt, Jonathan A.

    2014-03-20

    The bulk heterojunction (BHJ) solar cell performance of many polymers depends on the polymer molecular weight (M n) and the solvent additive(s) used for solution processing. However, the mechanism that causes these dependencies is not well understood. This work determines how M n and solvent additives affect the performance of BHJ solar cells made with the polymer poly(di(2-ethylhexyloxy)benzo[1,2-b:4,5-b\\']dithiophene-co- octylthieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD). Low M n PBDTTPD devices have exceedingly large fullerene-rich domains, which cause extensive charge-carrier recombination. Increasing the M n of PBDTTPD decreases the size of these domains and significantly improves device performance. PBDTTPD aggregation in solution affects the size of the fullerene-rich domains and this effect is linked to the dependency of PBDTTPD solubility on M n. Due to its poor solubility high M n PBDTTPD quickly forms a fibrillar polymer network during spin-casting and this network acts as a template that prevents large-scale phase separation. Furthermore, processing low M n PBDTTPD devices with a solvent additive improves device performance by inducing polymer aggregation in solution and preventing large fullerene-rich domains from forming. These findings highlight that polymer aggregation in solution plays a significant role in determining the morphology and performance of BHJ solar cells. The performance of poly(di(2-ethylhexyloxy) benzo[1,2-b:4,5-b\\']dithiophene-co-octylthieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) bulk heterojunction solar cells strongly depends on the polymer molecular weight, and processing these bulk heterojunctions with a solvent additive preferentially improves the performance of low molecular weight devices. It is demonstrated that polymer aggregation in solution significantly impacts the thin-film bulk heterojunction morphology and is vital for high device performance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Türkiye’de Banka Kredi Kanalının İşleyişi: Ampirik Bir Analiz(Processing of Bank Lending Channel in Turkey: An Empirical Analysis

    Directory of Open Access Journals (Sweden)

    Osman PEKER

    2011-01-01

    Full Text Available In this study, processing of bank lending channel in Turkey was tested with the help of vector auto regression (VAR method by using 1990:01-2008:11 period monthly data. Processing of bank lending channel was investigated on the basis of two different monetary policy variables. According to the empirical findings of the study, on the contrary overnight interest rate, money supply was found to be a more effective monetary policy variable. In case of controling money supply, Central Bank can operate effectively bank credit channels and therefore the amount of output and inflation is going to be directed more easily. In this context it can be said that the processing of the bank lending channel is effective in Turkey.

  16. DWDM DFB LD fabricated by nanoimprint process

    Science.gov (United States)

    Liu, Wen; Wang, Lei; Zhou, Ning; Zhang, Yiwen; Qiu, Fei; Xu, Zhimou

    2011-02-01

    DFB LDs are key components in DWDM optical network. Now they are very expensive because the feedback grating period has to be controlled with very high accuracy and EBL is currently the most popular solution. We propose a high throughput, low cost NIL process based on a large stamp fabricated by SFIL and soft stamp pattern transfer method. DFB chips on 30mm*30mm area were manufactured with both good uniformity and performance. 13 ITU channels from 1540nm to 1560nm of 200GHz space are made. Our results show NIL has high potential to become another popular technology for DFB LD production, this cost effective and high efficiency manufacture solution may yield a significant impact to the future optical communication industry development.

  17. Process for the removal of radium from acidic solutions containing same

    Science.gov (United States)

    Scheitlin, F.M.

    The invention is a process for the removal of radium from acidic aqueous solutions. In one aspect, the invention is a process for removing radium from an inorganic-acid solution. The process comprises contacting the solution with coal fly ash to effect adsorption of the radium on the ash. The radium-containing ash then is separated from the solution. The process is simple, comparatively inexpensive, and efficient. High radium-distribution coefficients are obtained even at room temperature. Coal fly ash is an inexpensive, acid-resistant, high-surface-area material which is available in large quantities throughout the United States. The invention is applicable, for example, to the recovery of /sup 226/Ra from nitric acid solutions which have been used to leach radium from uranium-mill tailings.

  18. Solution-processed inorganic copper(I) thiocyanate (CuSCN) hole transporting layers for efficient p–i–n perovskite solar cells

    KAUST Repository

    Zhao, Kui; Munir, Rahim; Yan, Buyi; Yang, Yang; Kim, Taesoo; Amassian, Aram

    2015-01-01

    CuSCN is a highly transparent, highly stable, low cost and easy to solution process HTL that is proposed as a low cost replacement to existing organic and inorganic metal oxide hole transporting materials. Here, we demonstrate hybrid organic

  19. A novel portable multi-channel analyzer based on high-speed microcontroller

    International Nuclear Information System (INIS)

    Lou Xinghua; Yi Hongchang; Wang Yuemin

    2005-01-01

    This paper introduces a novel portable multi-channel analyzer (MCA) based on high-speed microcontroller. The hardware implementation and the software scenario of the MCA are discussed. The MCA has features of high speed, small size and better performances. (authors)

  20. Preeclampsia, migración celular y canales iónicos Preeclampsia, cellular migration and ion channels

    Directory of Open Access Journals (Sweden)

    Silvana M. del Mónaco

    2008-10-01

    Full Text Available En la placenta humana, el sinciciotrofoblasto es la barrera que regula el transporte de nutrientes, solutos y agua entre la sangre materna y fetal. Dentro de este movimiento transepitelial se encuentra el del Na+, su contribución a la presión osmótica es fundamental en la regulación del volumen de líquido extracelular. El canal epitelial de sodio sensible al amiloride (ENaC media el transporte de Na+ desde el lumen hacia el interior celular en numerosos epitelios absortivos. Está regulado por la aldosterona, vasopresina, catecolaminas, estrógenos y progesterona. Es bloqueado por el amiloride y sus análogos. Para su activación, diversas proteasas lo escinden en la membrana plasmática y esto a su vez es regulado por la aldosterona. El ENaC está expresado también en la placenta humana y aunque su función no es conocida, podría participar en la homeostasis de agua y electrolitos. El ENaC también es influenciado por el estado de las proteínas del citoesqueleto y los cambios en el volumen celular alteran a su vez a éste. De esta manera existe una relación entre el ENaC y el citoesqueleto. Además, las corrientes de Na+ por el ENaC y otros canales de sodio participan en la migración celular en células normales y cancerosas. Aquí presentamos evidencias que avalan la hipótesis que el ENaC es necesario para la migración celular en células BeWo, derivadas del trofoblasto humano, que sintetizan hormonas y expresan el ENaC. Las células BeWO han sido utilizadas como modelo experimental para estudiar el transporte en células de placenta.The syncytiotrophoblast acts in human placenta as a transporting barrier regulating the transference of nutrients, solutes and water between maternal and fetal blood. This transepithelial transport involves movement of Na+ and its contribution to the osmotic pressure is an important determinant of the extracellular fluid volume. ENaC is a channel that mediates entry of Na+ from the luminal fluid into

  1. N-polar GaN epitaxy and high electron mobility transistors

    International Nuclear Information System (INIS)

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  2. Acid solution is a suitable medium for introducing QX-314 into nociceptors through TRPV1 channels to produce sensory-specific analgesic effects.

    Directory of Open Access Journals (Sweden)

    He Liu

    Full Text Available BACKGROUND: Previous studies have demonstrated that QX-314, an intracellular sodium channel blocker, can enter into nociceptors through capsaicin-activated TRPV1 or permeation of the membrane by chemical enhancers to produce a sensory-selective blockade. However, the obvious side effects of these combinations limit the application of QX-314. A new strategy for targeting delivery of QX-314 into nociceptors needs further investigation. The aim of this study is to test whether acidic QX-314, when dissolves in acidic solution directly, can enter into nociceptors through acid-activated TRPV1 and block sodium channels from the intracellular side to produce a sensory-specific analgesic effect. METHODOLOGY/PRINCIPAL FINDINGS: Acidic solution or noradrenaline was injected intraplantarly to induce acute pain behavior in mice. A chronic constrictive injury model was performed to induce chronic neuropathic pain. A sciatic nerve blockade model was used to evaluate the sensory-specific analgesic effects of acidic QX-314. Thermal and mechanical hyperalgesia were measured by using radiant heat and electronic von Frey filaments test. Spinal Fos protein expression was determined by immunohistochemistry. The expression of p-ERK was detected by western blot assay. Whole cell clamp recording was performed to measure action potentials and total sodium current in rats DRG neurons. We found that pH 5.0 PBS solution induced behavioral hyperalgesia accompanied with the increased expression of spinal Fos protein and p-ERK. Pretreatment with pH 5.0 QX-314, and not pH 7.4 QX-314, alleviated pain behavior, inhibited the increased spinal Fos protein and p-ERK expression induced by pH 5.0 PBS or norepinephrine, blocked sodium currents and abolished the production of action potentials evoked by current injection. The above effects were prevented by TRPV1 channel inhibitor SB366791, but not by ASIC channel inhibitor amiloride. Furthermore, acidic QX-314 employed adjacent to the

  3. Effect of dope solution temperature on the membrane structure and membrane distillation performance

    Science.gov (United States)

    Nawi, N. I. M.; Bilad, M. R.; Nordin, N. A. H. M.

    2018-04-01

    Membrane distillation (MD) is a non-isothermal process applicable to purify water using hydrophobic membrane. Membrane in MD is hydrophobic, permeable to water vapor but repels liquid water. MD membrane is expected to pose high flux, high fouling and scaling resistances and most importantly high wetting resistance. This study develops flat-sheet polyvinylidene fluoride (PVDF) membrane by exploring both liquid-liquid and liquid-solid phase inversion technique largely to improve its wetting resistance and flux performance. We hypothesize that temperature of dope solution play roles in solid-liquid separation during membrane formation and an optimum balance between liquid-liquid and liquid-solid (crystallization) separation leads to highly performance PVDF membrane. Findings obtained from differential scanning calorimeter test show that increasing dope solution temperature reduces degree of PVDF crystallinity and suppresses formation of crystalline structure. The morphological images of the resulting membranes show that at elevated dope solution temperature (40, 60, 80 and 100°C), the spherulite-like structures are formed across the thickness of membranes ascribed from due to different type of crystals. The performance of direct-contact MD shows that the obtained flux of the optimum dope temperature (60°C) of 10.8 L/m2h is comparable to commercial PTFE-based MD membrane.

  4. High density processing electronics for superconducting tunnel junction x-ray detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Warburton, W.K., E-mail: bill@xia.com [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Harris, J.T. [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Friedrich, S. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)

    2015-06-01

    Superconducting tunnel junctions (STJs) are excellent soft x-ray (100–2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays – currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I–V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

  5. Processes Leading to Beaded Channels Formation in Central Yakutia

    Science.gov (United States)

    Tarbeeva, A. M.; Lebedeva, L.; Efremov, V. S.; Krylenko, I. V.; Surkov, V. V.

    2017-12-01

    Beaded channels, consisting of deepened and widened pools and connecting narrow runs, are common fluvial forms in permafrost regions. Recent studies have shown that beaded channels are very important for connecting alluvial rivers with headwater lakes allowing fish passage and foraging habitats, as well as regulating river runoff. Beaded channels are known as typical thermokarst landforms; however, there is no evidence of their origin and formative processes. Geomorphological analyzes of beaded channels have been completed in several permafrost regions including field observations of Shestakovka River in Central Yakutia. The study aims to recognize the modern exogenic processes and formative mechanisms of beaded river channels. We show that beaded channel of Shestakovka River form in the perennially frozen sand with low ice content, leading us to hypothesize that thermokarst is not the main process of formation. Due to the significant volume of water, the pools don't freeze over entirely during winters, even under harsh climatic conditions. As a result, lenses of pressurized water remain under surface ice underlain by perennially thawed sediments. The presence of thawed sediments under the pools and frozen sediments under the runs leads to uneven thermoerosion of the riverbed during floods, providing the beaded form of the channel. In addition, freezing of pools during winter leads to pressure increasing under ice cover and formation of ice mounds, which crack several times during winter leading to disturbance of riverbanks. Many 1st to 3rd order streams have a specific transitional meandering-to-beaded form resembling the shape of unconfined meandering rivers, but consisting of pools and runs. However, such channels exhibit no evidences of present-day erosion of concave banks and sediment accumulation at the convex banks as typically being observed in normally meandering rivers. Such forms of channels indicates that their formation occurred by the greater channel

  6. A high-performance supercapacitor electrode based on N-doped porous graphene

    Science.gov (United States)

    Dai, Shuge; Liu, Zhen; Zhao, Bote; Zeng, Jianhuang; Hu, Hao; Zhang, Qiaobao; Chen, Dongchang; Qu, Chong; Dang, Dai; Liu, Meilin

    2018-05-01

    The development of high-performance supercapacitors (SCs) often faces some contradictory and competing requirements such as excellent rate capability, long cycling life, and high energy density. One effective strategy is to explore electrode materials of high capacitance, electrode architectures of fast charge and mass transfer, and electrolytes of wide voltage window. Here we report a facile and readily scalable strategy to produce high-performance N-doped graphene with a high specific capacitance (∼390 F g-1). A symmetric SC device with a wide voltage window of 3.5 V is also successfully fabricated based on the N-doped graphene electrode. More importantly, the as-assembled symmetric SC delivers a high energy density of 55 Wh kg-1 at a power density of 1800 W kg-1 while maintaining superior cycling life (retaining 96.6% of the initial capacitance after 20,000 cycles). Even at a power density as high as 8800 W kg-1, it still retains an energy density of 29 Wh kg-1, higher than those of previously reported graphene-based symmetric SCs.

  7. Performance analysis of LDPC codes on OOK terahertz wireless channels

    Science.gov (United States)

    Chun, Liu; Chang, Wang; Jun-Cheng, Cao

    2016-02-01

    Atmospheric absorption, scattering, and scintillation are the major causes to deteriorate the transmission quality of terahertz (THz) wireless communications. An error control coding scheme based on low density parity check (LDPC) codes with soft decision decoding algorithm is proposed to improve the bit-error-rate (BER) performance of an on-off keying (OOK) modulated THz signal through atmospheric channel. The THz wave propagation characteristics and channel model in atmosphere is set up. Numerical simulations validate the great performance of LDPC codes against the atmospheric fading and demonstrate the huge potential in future ultra-high speed beyond Gbps THz communications. Project supported by the National Key Basic Research Program of China (Grant No. 2014CB339803), the National High Technology Research and Development Program of China (Grant No. 2011AA010205), the National Natural Science Foundation of China (Grant Nos. 61131006, 61321492, and 61204135), the Major National Development Project of Scientific Instrument and Equipment (Grant No. 2011YQ150021), the National Science and Technology Major Project (Grant No. 2011ZX02707), the International Collaboration and Innovation Program on High Mobility Materials Engineering of the Chinese Academy of Sciences, and the Shanghai Municipal Commission of Science and Technology (Grant No. 14530711300).

  8. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    Energy Technology Data Exchange (ETDEWEB)

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-08-04

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  9. On-line coupling of sample preconcentration by LVSEP with gel electrophoretic separation on T-channel chips.

    Science.gov (United States)

    Kitagawa, Fumihiko; Kinami, Saeko; Takegawa, Yuuki; Nukatsuka, Isoshi; Sueyoshi, Kenji; Kawai, Takayuki; Otsuka, Koji

    2017-01-01

    To achieve an on-line coupling of the sample preconcentration by a large-volume sample stacking with an electroosmotic flow pump (LVSEP) with microchip gel electrophoresis (MCGE), a sample solution, a background solution for LVSEP and a sieving solution for MCGE were loaded in a T-form channel and three reservoirs on PDMS microchips. By utilizing the difference in the flow resistance of the two channels, a low-viscosity sample and a viscous polymer solution were easily introduced into the LVSEP and MCGE channels, respectively. Fluorescence imaging of the sequential LVSEP-MCGE processes clearly demonstrated that a faster stacking of anionic fluorescein and successive introduction into the MCGE channel can be carried out on the T-channel chip. To evaluate the preconcentration performance, a conventional MCZE analysis of fluorescein on the cross-channel chip was compared with LVSEP-MCGE on the short T-channel chip, and as a result that the value of sensitive enhancement factor (SEF) was estimated to be 370. The repeatability of the peak height was good with the RSD value of 3.2%, indicating the robustness of the enrichment performance. In the successive LVSEP-MCGE analysis of φX174/HaeIII digest, the DNA fragments were well enriched to a sharp peak in the LVSEP channel, and they were separated in the MCGE channel, whose electropherogram was well-resembled with that in the conventional MCGE. The values of SEF for the DNA fragments were calculated to be ranging from 74 to 108. Thus, the successive LVSEP-MCGE analysis was effective for both preconcentrating and separating DNA fragments. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Acclimation to extremely high ammonia levels in continuous biomethanation process and the associated microbial community dynamics

    DEFF Research Database (Denmark)

    Tian, Hailin; Fotidis, Ioannis; Mancini, Enrico

    2018-01-01

    Acclimatized anaerobic communities to high ammonia levels can offer a solution to the ammonia toxicity problem in biogas reactors. In the current study, a stepwise acclimation strategy up to 10 g NH4+-N L−1, was performed in mesophilic (37 ± 1 °C) continuously stirred tank reactors. The reactors...... change throughout the ammonia acclimation process. Clostridium ultunense, a syntrophic acetate oxidizing bacteria, increased significantly alongside with hydrogenotrophic methanogen Methanoculleus spp., indicating strong hydrogenotrophic methanogenic activity at extreme ammonia levels (>7 g NH4+-N L−1...

  11. A Thermally Tunable 1 × 4 Channel Wavelength Demultiplexer Designed on a Low-Loss Si3N4 Waveguide Platform

    Directory of Open Access Journals (Sweden)

    Mohammed Shafiqul Hai

    2015-11-01

    Full Text Available A thermally tunable 1 × 4 channel optical demultiplexer was designed using an ultra low-loss Si3N4 (propagation loss ~3.1 dB/m waveguide. The demultiplexer has three 2 × 2 Mach-Zehnder interferometers (MZI, where each of the MZI contains two 2 × 2 general interference based multimode interference (MMI couplers. The MMI couplers exhibit −3.3 dB to −3.7 dB power division ratios over a 50 nm wavelength range from 1530 nm to 1580 nm. The chrome-based (Cr heaters placed on the delay arms of the MZI filters enable thermal tuning to control the optical phase shift in the MZI delay arms. This facilitates achieving moderately low crosstalk (14.5 dB between the adjacent channels. The optical insertion loss of the demultiplexer per channel is between 1.5 dB to 2.2 dB over the 1550 nm to 1565 nm wavelength range. Error free performance (BER of 10−12 is obtained for all four 40 Gb/s data rate channels. The optical demultiplexer is an important tool towards building photonic integrated circuits with complex optical signal processing functionalities in the low-loss Si3N4 waveguide platform.

  12. Dynamic Channel Slot Allocation Scheme and Performance Analysis of Cyclic Quorum Multichannel MAC Protocol

    Directory of Open Access Journals (Sweden)

    Xing Hu

    2017-01-01

    Full Text Available In high diversity node situation, multichannel MAC protocol can improve the frequency efficiency, owing to fewer collisions compared with single-channel MAC protocol. And the performance of cyclic quorum-based multichannel (CQM MAC protocol is outstanding. Based on cyclic quorum system and channel slot allocation, it can avoid the bottleneck that others suffered from and can be easily realized with only one transceiver. To obtain the accurate performance of CQM MAC protocol, a Markov chain model, which combines the channel-hopping strategy of CQM protocol and IEEE 802.11 distributed coordination function (DCF, is proposed. The results of numerical analysis show that the optimal performance of CQM protocol can be obtained in saturation bound situation. And then we obtain the saturation bound of CQM system by bird swarm algorithm. In addition, to improve the performance of CQM protocol in unsaturation situation, a dynamic channel slot allocation of CQM (DCQM protocol is proposed, based on wavelet neural network. Finally, the performance of CQM protocol and DCQM protocol is simulated by Qualnet platform. And the simulation results show that the analytic and simulation results match very well; the DCQM performs better in unsaturation situation.

  13. An Accelerating Solution for N-Body MOND Simulation with FPGA-SoC

    Directory of Open Access Journals (Sweden)

    Bo Peng

    2016-01-01

    Full Text Available As a modified-gravity proposal to handle the dark matter problem on galactic scales, Modified Newtonian Dynamics (MOND has shown a great success. However, the N-body MOND simulation is quite challenged by its computation complexity, which appeals to acceleration of the simulation calculation. In this paper, we present a highly integrated accelerating solution for N-body MOND simulations. By using the FPGA-SoC, which integrates both FPGA and SoC (system on chip in one chip, our solution exhibits potentials for better performance, higher integration, and lower power consumption. To handle the calculation bottleneck of potential summation, on one hand, we develop a strategy to simplify the pipeline, in which the square calculation task is conducted by the DSP48E1 of Xilinx 7 series FPGAs, so as to reduce the logic resource utilization of each pipeline; on the other hand, advantages of particle-mesh scheme are taken to overcome the bottleneck on bandwidth. Our experiment results show that 2 more pipelines can be integrated in Zynq-7020 FPGA-SoC with the simplified pipeline, and the bandwidth requirement is reduced significantly. Furthermore, our accelerating solution has a full range of advantages over different processors. Compared with GPU, our work is about 10 times better in performance per watt and 50% better in performance per cost.

  14. Mixed Uranium/Refractory Metal Carbide Fuels for High Performance Nuclear Reactors

    International Nuclear Information System (INIS)

    Knight, Travis; Anghaie, Samim

    2002-01-01

    Single phase, solid-solution mixed uranium/refractory metal carbides have been proposed as an advanced nuclear fuel for advanced, high-performance reactors. Earlier studies of mixed carbides focused on uranium and either thorium or plutonium as a fuel for fast breeder reactors enabling shorter doubling owing to the greater fissile atom density. However, the mixed uranium/refractory carbides such as (U, Zr, Nb)C have a lower uranium densities but hold significant promise because of their ultra-high melting points (typically greater than 3700 K), improved material compatibility, and high thermal conductivity approaching that of the metal. Various compositions of (U, Zr, Nb)C were processed with 5% and 10% metal mole fraction of uranium. Stoichiometric samples were processed from the constituent carbide powders, while hypo-stoichiometric samples with carbon-to-metal (C/M) ratios of 0.92 were processed from uranium hydride, graphite, and constituent refractory carbide powders. Processing techniques of cold uniaxial pressing, dynamic magnetic compaction, sintering, and hot pressing were investigated to optimize the processing parameters necessary to produce high density (low porosity), single phase, solid-solution mixed carbide nuclear fuels for testing. This investigation was undertaken to evaluate and characterize the performance of these mixed uranium/refractory metal carbides for high performance, ultra-safe nuclear reactor applications. (authors)

  15. Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

    Science.gov (United States)

    Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

    2018-09-01

    In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

  16. Performance Characterization of a Real-Time Massive MIMO System with LOS Mobile Channels

    OpenAIRE

    Harris, Paul; Malkowsky, Steffen; Vieira, Joao; Hassan, Fredrik Tufvesson Wael Boukley; Liu, Liang; Beach, Mark; Armour, Simon; Edfors, Ove

    2017-01-01

    The first measured results for massive multiple input, multiple-output (MIMO) performance in a line-of-sight (LOS) scenario with moderate mobility are presented, with 8 users served in real-time using a 100 antenna base Station (BS) at 3.7 GHz. When such a large number of channels dynamically change, the inherent propagation and processing delay has a critical relationship with the rate of change, as the use of outdated channel information can result in severe detection and precoding inaccura...

  17. High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

    Science.gov (United States)

    Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

    2018-01-31

    The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

  18. Channel Estimation and Optimal Power Allocation for a Multiple-Antenna OFDM System

    Directory of Open Access Journals (Sweden)

    Yao Kung

    2002-01-01

    Full Text Available We propose combining channel estimation and optimal power allocation approaches for a multiple-antenna orthogonal frequency division multiplexing (OFDM system in high-speed transmission applications. We develop a least-square channel estimation approach, derive the performance bound of the estimator, and investigate the optimal training sequences for initial channel acquisition. Based on the channel estimates, the optimal power allocation solution which maximizes the bandwidth efficiency is derived under power and quality of service (Qos (symbol error rate constraints. It is shown that combining channel tracking and adaptive power allocation can dramatically enhance the outage capacity of an OFDM multiple-antenna system when severing fading occurs.

  19. Phase distribution measurements in narrow rectangular channels using image processing techniques

    International Nuclear Information System (INIS)

    Bentley, C.; Ruggles, A.

    1991-01-01

    Many high flux research reactor fuel assemblies are cooled by systems of parallel narrow rectangular channels. The HFIR is cooled by single phase forced convection under normal operating conditions. However, two-phase forced convection or two phase mixed convection can occur in the fueled region as a result of some hypothetical accidents. Such flow conditions would occur only at decay power levels. The system pressure would be around 0.15 MPa in such circumstances. Phase distribution of air-water flow in a narrow rectangular channel is examined using image processing techniques. Ink is added to the water and clear channel walls are used to allow high speed still photographs and video tape to be taken of the air-water flow field. Flow field images are digitized and stored in a Macintosh 2ci computer using a frame grabber board. Local grey levels are related to liquid thickness in the flow channel using a calibration fixture. Image processing shareware is used to calculate the spatially averaged liquid thickness from the image of the flow field. Time averaged spatial liquid distributions are calculated using image calculation algorithms. The spatially averaged liquid distribution is calculated from the time averaged spatial liquid distribution to formulate the combined temporally and spatially averaged fraction values. The temporally and spatially averaged liquid fractions measured using this technique compare well to those predicted from pressure gradient measurements at zero superficial liquid velocity

  20. A numerical solution to define channel heads and hillslope parameters from digital topography of glacially conditioned catchments

    Science.gov (United States)

    Salcher, Bernhard; Baumann, Sebastian; Kober, Florian; Robl, Jörg; Heiniger, Lukas

    2016-04-01

    The analysis of the slope-area relationship in bedrock streams is a common way for discriminating the channel from the hillslope domain and associated landscape processes. Spatial variations of these domains are important indicators of landscape change. In fluvial catchments, this relationship is a function of contributing drainage area, channel slope and the threshold drainage area for fluvial erosion. The resulting pattern is related to climate, tectonic and underlying bedrock. These factors may become secondary in catchments affected by glacial erosion, as it is the case in many mid- to high-latitude mountain belts. The perturbation (i.e. the destruction) of an initial steady state fluvial bedrock morphology (where uplift is balanced by surface lowering rates) will tend to become successively larger if the repeated action of glacial processes exceeds the potential of fluvial readjustment during deglaciated periods. Topographic change is associated with a decrease and fragmentation of the channel network and an extension of the hillslope domain. In case of glacially conditioned catchments discrimination of the two domains remains problematic and a discrimination inconsistent. A definition is therefore highly needed considering that (i) a spatial shift in the domains affect the process and rate of erosion and (ii) topographic classifications of alpine catchments often base on channel and hillslope parameters (i.e.channel or hillslope relief). Here we propose a novel numerical approach to topographically define channel heads from digital topography in glacially conditioned mountain range catchments in order to discriminate the channel from the hillslope domain. We analyzed the topography of the southern European Central Alps, a region which (i) has been glaciated multiple times during the Quaternary, shows (ii) little lithological variations, is (iii) home of very low erodible rocks and is (iv) known as a region were tectonic processes have largely ceased. The