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Sample records for solution annealed type

  1. Annealing behavior of solution grown polyethylene single crystals

    NARCIS (Netherlands)

    Loos, J.; Tian, M.

    2006-01-01

    The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

  2. Creep rupture properties of solution annealed and cold worked type 316 stainless steel cladding tubes

    International Nuclear Information System (INIS)

    Mathew, M.D.; Latha, S.; Mannan, S.L.; Rodriguez, P.

    1990-01-01

    Austenitic stainless steels (mainly type 316 and its modifications) are used as fuel cladding materials in all current generation fast breeder reactors. For the Fast Breeder Test Reactor (FBTR) at Kalpakkam, modified type 316 stainless steel (SS) was chosen as the material for fuel cladding tubes. In order to evaluate the influence of cold work on the performance of the fuel element, the investigation was carried out on cladding tubes in three metallurgical conditions (solution annealed, ten percent cold worked and twenty percent cold worked). The results indicate that: (i) The creep strength of type 316 SS cladding tube increases with increasing cold work. (ii) The benificial effects of cold work are retained at almost all the test conditions investigated. (iii) The Larson Miller parameter analysis shows a two slope behaviour for 20PCW material suggesting that caution should be exercised in extrapolating the creep rupture life to stresses below 125 MPa. At very low stress levels, the LMP values fall below the values of the 10 PCW material. (author). 6 refs., 19 figs. , 10 tabs

  3. Considerable improvement in the stability of solution processed small molecule OLED by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mao Guilin [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Wu Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); He Qiang [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Department of UAV, Wuhan Ordnance Noncommissioned Officers Academy, Wuhan, 430075 (China); Jiao Bo; Xu Guojin; Hou Xun [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Chen Zhijian; Gong Qihuang [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing, 100871 (China)

    2011-06-15

    We investigated the annealing effect on solution processed small organic molecule organic films, which were annealed with various conditions. It was found that the densities of the spin-coated (SC) films increased and the surface roughness decreased as the annealing temperature rose. We fabricated corresponding organic light emitting diodes (OLEDs) by spin coating on the same annealing conditions. The solution processed OLEDs show the considerable efficiency and stability, which were prior or equivalent to the vacuum-deposited (VD) counterparts. Our research shows that annealing process plays a key role in prolonging the lifetime of solution processed small molecule OLEDs, and the mechanism for the improvement of the device performance upon annealing was also discussed.

  4. Stress relaxation in solution-annealed and 20% cold-worked Type 316 stainless steel

    International Nuclear Information System (INIS)

    Thomas, J.F. Jr.; Yaggee, F.L.

    1975-01-01

    Relaxation experiments were conducted at room temperature and various levels of tensile plastic strain. The data for both solution-annealed (SA) and 20 percent cold-worked (CW) material can be presented in terms of a single family of nonintersecting hardness curves. Although the hardness curves for SA can be reduced to a master curve, those for CW fail to fit this master curve at strain rates below 5 x 10 -6 s -1 . The slope of the hardness scaling relation increases with plastic deformation. (DLC)

  5. Effects of Solution Annealing Temperature on the Galvanic Corrosion Behavior of the Super Duplex Stainless Steels

    Science.gov (United States)

    Lee, Jun-Seob; Jeon, Soon-Hyeok; Park, Yong-Soo

    2013-02-01

    This study investigated the active dissolution of super duplex stainless steel (SDSS) at various solution annealing temperatures. The active dissolutions of the α-phase and γ-phase were compared, and the effects of the surface area ratio on the active dissolutions of both phases were investigated. There were two peaks in the active-passive transition region in the potentiodynamic test in the modified green-death solution. The two peaks changed as the solution annealing temperature was increased from 1050 to 1150 °C. The solution annealing temperature difference affected the critical anodic current densities. This provides useful information for determining the appropriate solution annealing temperature in the modified green-death solution for SDSS.

  6. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    International Nuclear Information System (INIS)

    Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

    2012-01-01

    In the present study, effect of solution annealing temperature (1050 °C and 1100 °C) and isothermal ageing (700 °C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel (∼ 45% ferrite and ∼ 55% austenite) undergoes a series of metallurgical transformations during ageing—formation of secondary austenite (γ 2 ) and precipitation of Cr and Mo rich intermetallic (chi-χ and sigma-σ) phases. For solution annealing at 1050 °C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 °C. χ Phase precipitated after the precipitation of carbides—preferentially at the ferrite–ferrite and also at the ferrite–austenite boundaries. σ Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 °C was found to be carbides → χ → σ. On the contrary, for samples solution annealed at 1100 °C, the precipitation of χ phase was negligible. χ Phase precipitated before σ phase, preferentially along the ferrite–ferrite grain boundaries and was later consumed in the σ phase precipitation. The σ phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite γ 2 and σ phase in the ferrite and along the ferrite–austenite grain boundaries. An increase in the volume fraction of γ 2 and σ phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights: ► Effect of solution annealing temperature on microstructural evolution is studied. ► χ Phase precipitated preferentially in the samples solution annealed at

  7. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwar, A., E-mail: akashiwar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Vennela, N. Phani, E-mail: phanivennela@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Kamath, S.L., E-mail: kamath@iitb.ac.in [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay (IITB), Powai, Mumbai-400076, Maharashtra (India); Khatirkar, R.K., E-mail: rajesh.khatirkar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India)

    2012-12-15

    In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

  8. Effect of Mn Content and Solution Annealing Temperature on the Corrosion Resistance of Stainless Steel Alloys

    Directory of Open Access Journals (Sweden)

    Ihsan-ul-Haq Toor

    2014-01-01

    Full Text Available The corrosion behavior of two specially designed austenitic stainless steels (SSs having different Nickel (Ni and Manganese (Mn contents was investigated. Prior to electrochemical tests, SS alloys were solution-annealed at two different temperatures, that is, at 1030°C for 2 h and 1050°C for 0.5 h. Potentiodynamic polarization (PD tests were carried out in chloride and acidic chloride, whereas linear polarization resistance (LPR and electrochemical impedance spectroscopy (EIS was performed in 0.5 M NaCl solution at room temperature. SEM/EDS investigations were carried out to study the microstructure and types of inclusions present in these alloys. Experimental results suggested that the alloy with highest Ni content and annealed at 1050°C/0.5 hr has the highest corrosion resistance.

  9. Radiation damage structure in irradiated and annealed 440 WWER-Type reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Kocik, J.; Keilova, E.

    1993-01-01

    A review of irradiation damages in WWER-type RPV steels based on conventional Transmission Electron Microscopy investigations in a power reactor and a research reactor, is presented; the samples consist in Cr-Mo-V ferritic steel (15Kh2MFA type). The visible part of radiation-induced defects consists of very fine vanadium carbide precipitates, small dislocation loops and black dots (presumably corresponding to clusters and particle embryos formed from vacancies and solute-atoms (vanadium, copper, phosphorus) and carbon associated with vanadium. Radiation-induced defects are concentrated at dislocation substructure during irradiation in a power reactor, revealing the role of radiation-enhanced diffusion in damage structure forming process. Contrarily, the distribution of defects resulting from annealing of specimens irradiated in the research reactor is pre-determined by an homogenous distribution of radiation-induced defects prior to annealing. Increasing the number of re-irradiation and annealing cycles, the amount of dislocation loops among all defects seems to be growing. Simultaneously, the dislocation substructure recovers considerably. (authors). 14 refs., 11 figs., 3 tabs

  10. Radiation damage structure in irradiated and annealed 440 WWER-Type reactor pressure vessel steels

    Energy Technology Data Exchange (ETDEWEB)

    Kocik, J; Keilova, E [Czech Nuclear Society, Prague (Czech Republic)

    1994-12-31

    A review of irradiation damages in WWER-type RPV steels based on conventional Transmission Electron Microscopy investigations in a power reactor and a research reactor, is presented; the samples consist in Cr-Mo-V ferritic steel (15Kh2MFA type). The visible part of radiation-induced defects consists of very fine vanadium carbide precipitates, small dislocation loops and black dots (presumably corresponding) to clusters and particle embryos formed from vacancies and solute-atoms (vanadium, copper, phosphorus) and carbon associated with vanadium. Radiation-induced defects are concentrated at dislocation substructure during irradiation in a power reactor, revealing the role of radiation-enhanced diffusion in damage structure forming process. Contrarily, the distribution of defects resulting from annealing of specimens irradiated in the research reactor is pre-determined by an homogenous distribution of radiation-induced defects prior to annealing. Increasing the number of re-irradiation and annealing cycles, the amount of dislocation loops among all defects seems to be growing. Simultaneously, the dislocation substructure recovers considerably. (authors). 14 refs., 11 figs., 3 tabs.

  11. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    International Nuclear Information System (INIS)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei

    2015-01-01

    We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10 8 and a field-effect mobility of 0.3 cm 2  V −1  s −1 . These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs

  12. Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

    Science.gov (United States)

    Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

    2016-01-01

    We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

  13. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei, E-mail: sei-uemura@aist.go.jp [Flexible Electronics Research Center (FLEC), National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2015-06-15

    We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10{sup 8} and a field-effect mobility of 0.3 cm{sup 2} V{sup −1} s{sup −1}. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

  14. Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

    International Nuclear Information System (INIS)

    Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N; Uraoka, Yukiharu; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi

    2016-01-01

    We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ∼13 cm 2 V −1 s −1 and small threshold voltage which varied from ∼0–3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs. (paper)

  15. Increasing Weldability of Service-Aged Reformer Tubes by Partial Solution Annealing

    Science.gov (United States)

    Mostafaei, M.; Shamanian, M.; Purmohamad, H.; Amini, M.

    2016-04-01

    A dissimilar joint of 25Cr-35Ni/30Cr-48Ni (HP/HV) heat-resistant steels was evaluated. The investigations indicated that the as-cast HP alloy contained M7C3, M23C6, and NbC carbides and HV alloy with 5 wt.% tungsten, contained M23C6 and M6C carbides embedded in an austenitic matrix. After 8 years of ex-service aging at 1050 °C, the ductility of HP/HV reformer tubes was decreased dramatically, and thus, the repair welding of the aged HP/HV dissimilar joint was at a risk. In order to repair the aged reformer tubes and increase weldability properties, a new partial solution annealing treatment was designed. Mechanical testing results showed that partial solution annealing at 1200 °C for 6 h increased the elongation and toughness of the aged HP and HV alloys drastically. Also, a mechanism for constitutional liquation cracking in the heat-affected zones (HAZ) of the HP/HV dissimilar joint was proposed. In the HAZ of the aged HP/HV welded joint, the cracks around the locally melted carbides were initiated and propagated during carbides solidification at the cooling cycle of welding associated with the decrease in the ductility of the aged HP and HV alloys. In addition, Varestraint weldability test showed that the susceptibility to hot cracking was decreased with partial solution annealing.

  16. Mathematical foundation of quantum annealing

    International Nuclear Information System (INIS)

    Morita, Satoshi; Nishimori, Hidetoshi

    2008-01-01

    Quantum annealing is a generic name of quantum algorithms that use quantum-mechanical fluctuations to search for the solution of an optimization problem. It shares the basic idea with quantum adiabatic evolution studied actively in quantum computation. The present paper reviews the mathematical and theoretical foundations of quantum annealing. In particular, theorems are presented for convergence conditions of quantum annealing to the target optimal state after an infinite-time evolution following the Schroedinger or stochastic (Monte Carlo) dynamics. It is proved that the same asymptotic behavior of the control parameter guarantees convergence for both the Schroedinger dynamics and the stochastic dynamics in spite of the essential difference of these two types of dynamics. Also described are the prescriptions to reduce errors in the final approximate solution obtained after a long but finite dynamical evolution of quantum annealing. It is shown there that we can reduce errors significantly by an ingenious choice of annealing schedule (time dependence of the control parameter) without compromising computational complexity qualitatively. A review is given on the derivation of the convergence condition for classical simulated annealing from the view point of quantum adiabaticity using a classical-quantum mapping

  17. Observation of glassy state relaxation during annealing of frozen sugar solutions by X-ray computed tomography.

    Science.gov (United States)

    Nakagawa, Kyuya; Tamiya, Shinri; Do, Gabsoo; Kono, Shinji; Ochiai, Takaaki

    2018-06-01

    Glassy phase formation in a frozen product determines various properties of the freeze-dried products. When an aqueous solution is subjected to freezing, a glassy phase forms as a consequence of freeze-concentration. During post-freezing annealing, the relaxation of the glassy phase and the ripening of ice crystals (i.e. Ostwald ripening) spontaneously occur, where the kinetics are controlled by the annealing and glass transition temperatures. This study was motivated to observe the progress of glassy state relaxation separate from ice coarsening during annealing. X-ray computed tomography (CT) was used to observe a frozen and post-freezing annealed solutions by using monochromatized X-ray from the synchrotron radiation. CT images were successfully obtained, and the frozen matrix were analyzed based on the gray level values that were equivalent to the linear X-ray attenuation coefficients of the observed matters. The CT images obtained from rapidly frozen sucrose and dextrin solutions with different concentrations gave clear linear relationships between the linear X-ray attenuation coefficients values and the solute concentrations. It was confirmed that the glassy state relaxation progressed as increasing annealing time, and this trend was larger in the order of the glass transition temperature of the maximally freeze-concentrated phase. The sucrose-water system required nearly 20 h of annealing time at -5 °C for the completion of the glassy phase relaxation, whereas dextrin-water systems required much longer periods because of their higher glass transition temperatures. The trends of ice coarsening, however, did not perfectly correspond to the trends of the relaxation, suggesting that the glassy phase relaxation and Ostwald ripening would jointly control the ice crystal growth/ripening kinetics, and the dominant mechanism differed by the annealing stage. Copyright © 2018 Elsevier B.V. All rights reserved.

  18. MgO magnetic tunnel junctions of enduring F-type upon annealing

    International Nuclear Information System (INIS)

    Schleicher, F; Halisdemir, U; Urbain, E; Gallart, M; Boukari, S; Beaurepaire, E; Gilliot, P; Bowen, M; Lacour, D; Montaigne, F; Hehn, M

    2015-01-01

    The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Î rel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO. (paper)

  19. Annealed star-branched polyelectrolytes in solution

    NARCIS (Netherlands)

    Klein Wolterink, J.; Male, van J.; Cohen Stuart, M.A.; Koopal, L.K.; Zhulina, E.B.; Borisov, O.V.

    2002-01-01

    Equilibrium conformations of annealed star-branched polyelectrolytes (polyacids) are calculated with a numerical self-consistent-field (SCF) model. From the calculations we obtain also the size and charge of annealed polyelectrolyte stars as a function of the number of arms, pH, and the ionic

  20. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a

  1. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  2. Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Daeho; Pan, Heng; Kim, Eunpa; Grigoropoulos, Costas P. [University of California, Department of Mechanical Engineering, Berkeley, CA (United States); Ko, Seung Hwan [Korea Advanced Institute of Science and Technology (KAIST), Department of Mechanical Engineering, Daejeon (Korea, Republic of); Park, Hee K. [AppliFlex LLC, Sunnyvale, CA (United States)

    2012-04-15

    A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 x 10{sup -2} {omega} cm, exhibiting a factor of 10{sup 5} higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. (orig.)

  3. Kinetics of Solute Partitioning During Intercritical Annealing of a Medium-Mn Steel

    Science.gov (United States)

    Kamoutsi, H.; Gioti, E.; Haidemenopoulos, Gregory N.; Cai, Z.; Ding, H.

    2015-11-01

    The evolution of austenite fraction and solute partitioning (Mn, Al, and C) during intercritical annealing was calculated for a medium-Mn steel containing 11 pct Mn. Austenite growth takes place in three stages. The first stage is growth under non-partitioning local equilibrium (NPLE) controlled by carbon diffusion in ferrite. The second stage is growth under partitioning local equilibrium (PLE) controlled by diffusion of Mn in ferrite. The third stage is shrinkage of austenite under PLE controlled by diffusion of Mn in austenite. During PLE growth, the austenite is progressively enriched in Mn. Compositional spikes evolve early during NPLE growth and broaden with annealing temperature and time.

  4. Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Lee, Seungwoon; Jeong, Jaewook

    2017-08-01

    In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

  5. The annealing of radiation damage in type Ia diamond

    International Nuclear Information System (INIS)

    Collins, Alan T; Kiflawi, Isaac

    2009-01-01

    The kinetics of the recovery of radiation damage in type Ia diamond has been investigated using isothermal annealing at 600 deg. C. In diamonds having a reasonably homogeneous distribution of nitrogen the decay of the vacancy concentration with time can be approximately described by a single exponential. Previous investigations have identified 'fast' and 'slow' components in the annealing, and we show that the existence of more than one time constant is associated with inhomogeneous nitrogen concentrations. The measurements show further that, in order to obtain the oscillator strengths of nitrogen-vacancy centres, studies must be restricted to diamonds with moderately high nitrogen concentrations.

  6. Exploration of DGVM Parameter Solution Space Using Simulated Annealing: Implications for Forecast Uncertainties

    Science.gov (United States)

    Wells, J. R.; Kim, J. B.

    2011-12-01

    Parameters in dynamic global vegetation models (DGVMs) are thought to be weakly constrained and can be a significant source of errors and uncertainties. DGVMs use between 5 and 26 plant functional types (PFTs) to represent the average plant life form in each simulated plot, and each PFT typically has a dozen or more parameters that define the way it uses resource and responds to the simulated growing environment. Sensitivity analysis explores how varying parameters affects the output, but does not do a full exploration of the parameter solution space. The solution space for DGVM parameter values are thought to be complex and non-linear; and multiple sets of acceptable parameters may exist. In published studies, PFT parameters are estimated from published literature, and often a parameter value is estimated from a single published value. Further, the parameters are "tuned" using somewhat arbitrary, "trial-and-error" methods. BIOMAP is a new DGVM created by fusing MAPSS biogeography model with Biome-BGC. It represents the vegetation of North America using 26 PFTs. We are using simulated annealing, a global search method, to systematically and objectively explore the solution space for the BIOMAP PFTs and system parameters important for plant water use. We defined the boundaries of the solution space by obtaining maximum and minimum values from published literature, and where those were not available, using +/-20% of current values. We used stratified random sampling to select a set of grid cells representing the vegetation of the conterminous USA. Simulated annealing algorithm is applied to the parameters for spin-up and a transient run during the historical period 1961-1990. A set of parameter values is considered acceptable if the associated simulation run produces a modern potential vegetation distribution map that is as accurate as one produced by trial-and-error calibration. We expect to confirm that the solution space is non-linear and complex, and that

  7. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

    2010-01-01

    We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

  8. Influence of solution annealing on microstructure and mechanical properties of Maraging 300 steel

    Energy Technology Data Exchange (ETDEWEB)

    Lima Filho, Venceslau Xavier; Barros, Isabel Ferreira; Abreu, Hamilton Ferreira Gomes de, E-mail: venceslau@ifce.edu.br [Universidade Federal do Ceara (UFC), Fortaleza, CE (Brazil). Departamento de Engenharia Metalurgica e Materiais. Laboratorio de Caracterizacao de Materiais, Metalurgia Fisica e Grupo de Pesquisa de Transformacao de Fase

    2017-01-15

    Maraging 300 belongs to a family of metallic materials with extremely high mechanical strength and good toughness. Some works have been published about aging temperatures that improve ultimate strength resistance with acceptable toughness levels in this steel family, where the prior austenite grain size obtained by different solution annealing temperature influence in the final mechanical properties. Solution annealing temperatures ranging from 860 °C to 1150 deg C and were kept constant until the aging temperature. These treatments were used in order to investigate their influence on the microstructure and mechanical properties of maraging steel 300, especially with regard to toughness. The characterization of the microstructure was performed by optical microscopy, scanning electron microscope (SEM) and X-ray diffraction (XRD). Mechanical properties were evaluated by Rockwell C hardness and Charpy impact tests. The results showed that there is a temperature range where one can get some improvement in toughness without a large loss of mechanical strength. (author)

  9. Effects of structural modification via high-pressure annealing on solution-processed InGaO films and thin-film transistors

    International Nuclear Information System (INIS)

    Rim, You Seung; Choi, Hyung-Wook; Kim, Kyung Hwan; Kim, Hyun Jae

    2016-01-01

    We investigated the structural modification of solution-processed nanocrystalline InGaO films via high-pressure annealing and fabricated thin-film transistors. The grain size of InGaO films annealed in the presence of oxygen under high pressure was significantly changed compared the films annealed without high pressure ambient. The O1s XPS peak distribution of InGaO films annealed under high pressure at 350 °C showed a peak similar to that of the non-pressure annealed film at 500 °C. The high-pressure annealing process promoted the elimination of organic residues and dehydroxylation of the metal hydroxide (M–OH) complex. We confirmed the improved device performance of high-pressure annealed InGaO-based thin-film transistors owing to the reduction in charge-trap density. (paper)

  10. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  11. Experiences with serial and parallel algorithms for channel routing using simulated annealing

    Science.gov (United States)

    Brouwer, Randall Jay

    1988-01-01

    Two algorithms for channel routing using simulated annealing are presented. Simulated annealing is an optimization methodology which allows the solution process to back up out of local minima that may be encountered by inappropriate selections. By properly controlling the annealing process, it is very likely that the optimal solution to an NP-complete problem such as channel routing may be found. The algorithm presented proposes very relaxed restrictions on the types of allowable transformations, including overlapping nets. By freeing that restriction and controlling overlap situations with an appropriate cost function, the algorithm becomes very flexible and can be applied to many extensions of channel routing. The selection of the transformation utilizes a number of heuristics, still retaining the pseudorandom nature of simulated annealing. The algorithm was implemented as a serial program for a workstation, and a parallel program designed for a hypercube computer. The details of the serial implementation are presented, including many of the heuristics used and some of the resulting solutions.

  12. Effect of domain variations on damping capacity of Fe-16Cr-2.5Mo alloy solution annealed at 1373 K and 1473 K

    International Nuclear Information System (INIS)

    Xu Yonggang; Ning Li; Wen Yuhua

    2011-01-01

    The damping capacity of Fe-16Cr-2.5Mo alloy heat-treated at different temperatures was investigated. A water-based magnetic fluid was used to analyze domain morphologies. The experimental results show that there is a maximum value of damping capacity when the solution annealing temperature of the material is 1373 K. When the annealing temperature is higher, the damping capacity of the alloy drops quickly. The change in damping capacity with the solution annealing temperature is believed to be due to different domain morphologies. The domains are larger and the domain-wall area is smaller in the alloy annealed at a higher temperature. The wedge-shaped domains acted as obstacles for pinning the domain-wall movement, even though movement of the 90 o domains is easy. As a result, the damping capacity of the alloys drops when the annealing temperature is very high. - Research Highlights: →The change in damping capacity with solution annealing temperature is believed to be due to different domain morphologies. →The domains are larger and the domain-wall area is smaller in the alloy annealed at a higher temperature. →The wedge-shaped domains acted as obstacles for pinning the domain-wall movement, even though movement of the 90 o domains is easy.

  13. Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-04-01

    Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

  14. The effect of solution annealing on properties of steel Nitronic 60

    Directory of Open Access Journals (Sweden)

    A. Gigović-Gekić

    2011-01-01

    Full Text Available Nitronic 60 (UNS S21800 is a highly alloyed austenitic stainless steel. This steel provides exceptional wear and galling resistance as well as a high temperature corrosion resistance. Increasing strength of Nitronic 60 is obtained by cold deformation. A solution annealing is necessary to achieve a complete austenitic microstructure without the presence of precipitates in the matrix. This paper describes determination of the appropriate heat treatment to obtain austenitic microstructure with a minimum consumption of time and energy.

  15. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  16. Impact of Annealing Prior to Solution Treatment on Aging Precipitates and Intergranular Corrosion Behavior of Al-Cu-Li Alloy 2050

    Science.gov (United States)

    Ye, Zhi-hao; Cai, Wen-xin; Li, Jin-feng; Chen, Xiang-rong; Zhang, Rui-feng; Birbilis, Nick; Chen, Yong-lai; Zhang, Xu-hu; Ma, Peng-cheng; Zheng, Zi-qiao

    2018-04-01

    The influences of annealing prior to solution treatment on the grain structure, subsequent aging precipitates, and intergranular corrosion (IGC) of Al-Cu-Li alloy (AA2050) sheet with T6 aging at 448 K (175 °C) were investigated. Annealing impedes the full recrystallization during solution treatment, increasing the population density of T1 (Al2CuLi) precipitates, but decreasing that of θ' (Al2Cu) precipitates, of the aged alloy. Meanwhile, annealing leads to the heterogeneous distribution of T1 precipitates, increasing the alloy hardness, and decreasing the open-circuit potential of the aged alloy. With prolonged aging time, the corrosion mode of the aged AA2050 samples with and without annealing evolved in a similar manner. The corrosion mode as a function of aging may be summarized as local IGC with pitting and general IGC with pitting (following initial aging and under the underaged condition), pitting corrosion (later in the under-aging stage), pitting with slight IGC (near the peak-aged condition), and pitting with local IGC (under the overaging condition). The annealing treatment hinders IGC propagation on the rolling surface while accelerating the IGC on transverse surfaces.

  17. Solution treatment of fast reactor claddings

    International Nuclear Information System (INIS)

    Miura, Makoto; Nagaki, Hiroshi; Koyama, Masahiro

    1974-01-01

    The fuel cladding tubes for Joyo (experimental FBR) are required to be a material corresponding to AISI Type 316 and cold-rolled after solution treatment. It is necessary to have no precipitation of carbide and to make the grain size smaller than ASTM No.6. It is very difficult to obtain the fine grains without the precipitation, however. In this connection, the behavior of carbide solution at high temperature and the annealing behavior of the material cold-worked and solution-treated were studied. The following matters are described: the solid solubility line of AISI Type 316; the behavior of carbide at solution treatment temperature; and the annealing behavior of the cold-worked material. (Mori, K.)

  18. Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

    2013-01-01

    We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

  19. Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

  20. Solution-Mediated Annealing of Polymer Optical Fiber Bragg Gratings at Room Temperature

    DEFF Research Database (Denmark)

    Fasano, Andrea; Woyessa, Getinet; Janting, Jakob

    2017-01-01

    In this letter, we investigate the response of poly(methylmethacrylate) (PMMA) microstructured polymer optical fiber Bragg gratings (POFBGs) after immersion inmethanol/water solutions at room temperature. As the glass transition temperature of solution-equilibrated PMMA differs from the one...... of solvent-free PMMA, different concentrations of methanol and water lead to various degrees of frozen-in stress relaxation in the fiber. After solvent evaporation, we observe a permanent blue-shift in the grating resonance wavelength. The main contribution in the resonance wavelength shift arises from...... a permanent change in the size of the fiber. The results are compared with conventional annealing. The proposed methodology is cost-effective as it does not require a climate chamber. Furthermore, it enables an easy-to-control tuning of the resonance wavelength of POFBGs....

  1. Effect of Annealing Temperature on the Corrosion Protection of Hot Swaged Ti-54M Alloy in 2 M HCl Pickling Solutions

    Directory of Open Access Journals (Sweden)

    El-Sayed M. Sherif

    2017-01-01

    Full Text Available The corrosion of Ti-54M titanium alloy processed by hot rotary swaging and post-annealed to yield different grain sizes, in 2 M HCl solutions is reported. Two annealing temperatures of 800 °C and 940 °C, followed by air cooling and furnace cooling were used to give homogeneous grain structures of 1.5 and 5 μm, respectively. It has been found that annealing the alloy at 800 °C decreased the corrosion of the alloy, with respect to the hot swaged condition, through increasing its corrosion resistance and decreasing the corrosion current and corrosion rate. Increasing the annealing temperature to 940 °C further decreased the corrosion of the alloy.

  2. Irradiation and annealing of p-type silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  3. Pattern Laser Annealing by a Pulsed Laser

    Science.gov (United States)

    Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

    1981-10-01

    Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

  4. Melting phenomenon and laser annealing in semiconductors

    International Nuclear Information System (INIS)

    Narayan, J.

    1981-03-01

    The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

  5. Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

    Science.gov (United States)

    Barnard, Abraham W.; Auret, F. D.; Meyer, W. E.

    2018-04-01

    Deep level transient spectroscopy was used to study the defects induced by alpha-particle irradiation from an Am241 source in antimony doped n-type germanium. Previous investigations of the well know Sb-vacancy defect have led to the discovery of a second defect with very similar emission properties, referred to as the E‧. Although both defects have similar emission rates, they have very different annealing properties. In this study we further investigated these properties of the E‧ in Sb doped samples irradiated at 270 K with alpha particles from an Am241 source. Laplace deep level transient spectroscopy was used to determine the concentration of each defect. An isothermal annealing study of the E‧ was carried out in the temperature range 300 K to 325 K in 5 K increments, while the Sb-vacancy was annealed out completely at 410 K onwards, long after the E‧ was completely annealed out. The annealing activation energy was determined through isothermal annealing profiles for both the Sb-Vacancy and the E‧ as 1.05 eV and 0.73 eV respectively with a prefactor of 2.05 × 109 s-1 and 2.7 × 108 s-1.

  6. Effect of Solution Annealing on Susceptibility to Intercrystalline Corrosion of Stainless Steel with 20% Cr and 8% Ni

    Science.gov (United States)

    Taiwade, R. V.; Patil, A. P.; Patre, S. J.; Dayal, R. K.

    2013-06-01

    In general, as-received (AR) austenitic stainless steels (ASSs) contain complex carbide precipitates due to manufacturing operations, subsequent annealing treatment, or due to the fabrication processes such as welding. The presence of pre-existing carbides leads to cumulative sensitization and make the steel susceptible to intercrystalline corrosion (ICC)/intergranular corrosion (IGC) which causes premature failure during service. Solution annealing (SA) is one of the ways to deal with such situations. In this present investigation, the AR (hot rolled and mill annealed) chromium-nickel (Cr-Ni) ASS is compared with SA Cr-Ni ASS. The extent of ICC/IGC was evaluated qualitatively and quantitatively by various electrochemical tests including ASTM standard A-262 Practice A and Practice E, double loop electrochemical potentiokinetic reactivation and electrochemical impedance spectroscopy. The degree of sensitization for hot rolled mill annealed AR condition is found to be substantially higher (51.55%) than that of SA condition (26.9%) for thermally aged samples (at 700 °C). The chemical composition across the grain boundary was measured using electron probe micro-analyzer for both (AR and SA) conditions and confirms that the pre-sensitization effect was completely removed after SA treatment.

  7. Spin-echo observation of radio frequency induced flux lattice annealing (RIFLA) in a type-II superconductor

    International Nuclear Information System (INIS)

    Clark, W.G.; Hanson, M.E.; Wong, W.H.

    1999-01-01

    We report the annealing of a strained flux line lattice (FLL) in 10 μm diameter type-II superconducting NbTi filaments by an RF magnetic field at 4.2 K in a magnetic field of 1 T. The strained FLL is prepared by slowly changing the direction of the applied magnetic field. When the RF magnetic field used to generate a 93 Nb NMR spin echo anneals the FLL, there is a corresponding reduction in the amplitude of the spin echo. Starting from an annealed condition, a rotation threshold of 3 mr is needed to produce enough FLL strain to be observed in these measurements. (orig.)

  8. CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

    CERN Document Server

    Hoedlmoser, H; Köhler, M; Nordlund, H

    2007-01-01

    Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

  9. An Evaluation of the Use of Simulated Annealing to Optimize Thinning Rates for Single Even-Aged Stands

    Directory of Open Access Journals (Sweden)

    Kai Moriguchi

    2015-01-01

    Full Text Available We evaluated the potential of simulated annealing as a reliable method for optimizing thinning rates for single even-aged stands. Four types of yield models were used as benchmark models to examine the algorithm’s versatility. Thinning rate, which was constrained to 0–50% every 5 years at stand ages of 10–45 years, was optimized to maximize the net present value for one fixed rotation term (50 years. The best parameters for the simulated annealing were chosen from 113 patterns, using the mean of the net present value from 39 runs to ensure the best performance. We compared the solutions with those from coarse full enumeration to evaluate the method’s reliability and with 39 runs of random search to evaluate its efficiency. In contrast to random search, the best run of simulated annealing for each of the four yield models resulted in a better solution than coarse full enumeration. However, variations in the objective function for two yield models obtained with simulated annealing were significantly larger than those of random search. In conclusion, simulated annealing with optimized parameters is more efficient for optimizing thinning rates than random search. However, it is necessary to execute multiple runs to obtain reliable solutions.

  10. Behavior of annealed type 316 stainless steel under monotonic and cyclic biaxial loading at room temperature

    International Nuclear Information System (INIS)

    Ellis, J.R.; Robinson, D.N.; Pugh, C.E.

    1978-01-01

    This paper addresses the elastic-plastic behavior of type 316 stainless steel, one of the major structural alloys used in liquid-metal fast breeder reactor components. The study was part of a continuing program to develop a structural design technology applicable to advanced reactor systems. Here, behaviour of solution annealed material was examined through biaxial stress experiments conducted at room temperature under radial loadings (√3tau=sigma) in tension-torsion stress space. The effects of both stress limited monotonic loading and strain limited cyclic loading were determined on the size, shape and position of yield loci corresponding to small offset strain (10 microstrain) definition of yield. In the present work, the aim was to determine the extent to which the constitutive laws previously recommended for type 304 stainless steel are applicable to type 316 stainless steel. It was concluded that for the conditions investigated, the inelastic behavior of the two materials are qualitatively similar. Specifically, the von Mises yield criterion provides a reasonable approximation of initial yield behavior and the subsequent hardening behavior, at least under small offset definitions of yield, is to the first order kinematic in nature. (Auth.)

  11. Towards p-type ZnO using post-growth annealing

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Roro, K.T.; Botha, J.R. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2008-01-15

    The optical properties of zinc oxide (ZnO) films grown by metalorganic chemical vapor deposition on GaAs substrate are investigated. Samples were annealed in two different ambients, namely nitrogen and oxygen, and studied by photoluminescence (PL). Samples annealed in oxygen at 600 C show arsenic acceptor-related signatures. The near-band-edge emission is dominated by an excitonic feature at 3.355 eV and compensation broadens the spectra. No such changes are observed when similar samples are annealed in nitrogen. The diffusion of arsenic from the GaAs substrate appears to be a source of acceptors. This effect is enhanced in an oxygen atmosphere. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Undoped p-type GaN1-xSbx alloys: Effects of annealing

    Science.gov (United States)

    Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

    2016-12-01

    We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

  13. Effect of annealing in reduced oxygen pressure on the structure and magnetic properties of M-type hexaferrite bulk and film

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Kyoung-Seok; Yang, Dae-Jin; Lee, Sang-Eui [Materials R& D Center, Samsung Advanced Institute of Technology, Samsung Electronics, 16677 Suwon (Korea, Republic of); Kim, Dong Hun [Department of Materials Science and Engineering, Myongji University, 17058 Yongin (Korea, Republic of); Kang, Young-Min, E-mail: ymkang@ut.ac.kr [Department of Materials Science & Engineering, Korea National University of Transportation, 27469 Chungju (Korea, Republic of)

    2017-06-15

    Highlights: • The Ca-La-Co SrM decomposed into the three different ferrite phases after N{sub 2} annealing at 1200 °C. • The charge-imbalance substitution of La{sup 3+}-Co{sup 2+} into SrM induces the phase instability. • The SrM films showed significantly increased M{sub S} with reduced H{sub C} after vacuum annealing. - Abstract: The Ca-La-Co-doped M-type Sr-hexaferrite (Sr{sub 0.1}Ca{sub 0.45}La{sub 0.45}Fe{sub 11.7}Co{sub 0.3}O{sub 19}) decomposed into three different phases of orthorhombic, spinel, and hexagonal structures after annealing at 1200 °C in nitrogen atmosphere while the non-substituted SrFe{sub 12}O{sub 19} maintained the hexagonal structure after annealing at the same condition. It is suggested that the charge-imbalance substitution of La{sup 3+}/Co{sup 2+} = 1.5 induces phase instability of the M-type structure and it causes the phase transformation during the N{sub 2} annealing. In film experiment, polycrystalline Sr-hexaferrite films (SrFe{sub 12}O{sub 19}) have been prepared by pulsed laser deposition and post-annealing processes. When the film was annealed in vacuum at 500 °C, the magnetization value at the magnetic field H = 15 kOe increased by ∼80% and the coercivity decreased significantly without microstructural change.

  14. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    Science.gov (United States)

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  15. Effect of annealing temperature on a single step processed Cu{sub 2}ZnSnS{sub 4} thin film via solution method

    Energy Technology Data Exchange (ETDEWEB)

    Prabeesh, P.; Selvam, I. Packia; Potty, S.N.

    2016-05-01

    Cu{sub 2}ZnSnS{sub 4} (CZTS) is a promising material for thin film solar cell applications because of its excellent photovoltaic properties, high abundance and non-toxicity. Thin films of CZTS are generally fabricated by vacuum based techniques or by using toxic solvents and these routes reduce its attention as a low cost and environmental friendly material. In this study, we have prepared CZTS through a solution based single step approach using non-toxic chemicals by spin coating and studied the effect of annealing temperature in the range 350–550 °C in nitrogen atmosphere on structural, optical and electrical properties. XRD results revealed the formation of kesterite phase at all annealing temperatures, while the Raman studies indicated Cu{sub 2}SnS{sub 2} impurity phase in the film annealed at 550 °C. Band gap of the films annealed in nitrogen varies from 1.46 eV to 1.56 eV, depending on the annealing temperature. Optimum properties, such as, good crystallinity, dense structure, ideal band gap (1.49 eV) and good absorption coefficient (10{sup 4} cm{sup −1}), were obtained for the film annealed at 500 °C for 30 min in nitrogen. - Highlights: • Prepared CZTS film through one-step liquid based approach using non-toxic chemicals. • Studied the effect of N{sub 2} annealing on structural, optical and electrical properties. • The phase pure CZTS absorber film exhibited excellent photovoltaic properties • The film annealed at 500 °C for 30 min in nitrogen exhibited optimum properties.

  16. Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

    Science.gov (United States)

    Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-09-01

    Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

  17. Influence of low-temperature annealing on InSb properties

    International Nuclear Information System (INIS)

    Tsitsina, N.P.; Fadeeva, A.P.; Vdovkina, E.E.; Baryshev, N.S.; Aver'yanov, I.S.

    1975-01-01

    Annealing at 200 deg C during 6 days does not cause inversion of conductivity in n-InSb, leads to the increase of the carrier concentration and the decrease of the specific resistance in samples both of n- and of p-type; these variations being more significant in the material of n-type. The existence of a level at a distance of 0.15-0.17 eV from the ceiling of the valency zone in non-annealed samples of InSb is confirmed. The level is of acceptor type and disappears with low-temperature annealing. The low-temperature annealing practically does not influence the lifetime in p-type samples and results in the 5-20-fold increase in the lifetime in n-type samples

  18. Effects of potential and concentration of bicarbonate solution on stress corrosion cracking of annealed carbon steel

    International Nuclear Information System (INIS)

    Haruna, Takumi; Zhu, Liehong; Murakami, Makoto; Shibata, Toshio

    2000-01-01

    Effects of potential and concentration of bicarbonate on stress corrosion cracking (SCC) of annealed SM 400 B carbon steel has been investigated in bicarbonate solutions at 343 K. The surface of annealed specimen had decarburized layer of about 0. 5 mm thickness. A potentiostatic slow strain rate testing apparatus equipped with a charge coupled device camera system was employed to evaluate SCC susceptibility from the viewpoint of the crack behavior. In a constant bicarbonate concentration of 1 M, cracks were observed in the potential range from -800 to 600 mV Ag/ A gCl . and especially, the initiation and the propagation of the cracks were accelerated at -600 mV. At a constant potential of -600 mV, cracks were observed in the concentration range from 0.001 to 1 M, and the initiation and the propagation of the cracks were suppressed as the concentration decreased. Polarization curves for the decarburized surface were measured with two different scan rates. High SCC susceptibility may be expected in the potential range where the difference between the two current densities is large. It was found in this system that the potential with the maximum difference in the current density was -600 mV for 1 M bicarbonate solution, and the potential increased with a decrease in the concentration of bicarbonate. This means that an applied potential of -600 mV provides the highest SCC susceptibility for 1 M bicarbonate solution, and that the SCC susceptibility decreases as the concentration decreases. These findings support the dependence of the actual SCC behavior on the potential and the concentration of bicarbonate. (author)

  19. Post-deposition annealing temperature dependence TiO_2-based EGFET pH sensor sensitivity

    International Nuclear Information System (INIS)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2016-01-01

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO_2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO_2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO_2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  20. Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon

    International Nuclear Information System (INIS)

    Biggeri, U.

    1995-01-01

    High Temperature Annealing (HTA) treatment has been carried out on fast-neutron irradiated silicon samples with temperatures up to 300 C. Fluences of irradiation up to 1x10 14 n/cm 2 were used. Before annealing, samples irradiated with fluences higher than 1x10 13 n/cm 2 suffered the type conductivity inversion from n-type to p-type. The changes in the resisitivity and Hall coefficient during each annealing step have been measured by Hall effect analysis. Results indicate the possible creation of acceptors for low temperature annealing up to 150 C and the phosphorous release by E centres at annealing temperatures among 150 C and 200 C. Heating samples up to 300 C allows the recovering of the sample resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing. (orig.)

  1. Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon

    International Nuclear Information System (INIS)

    Wilson, S.R.; Appleton, B.R.; White, C.W.; Narayan, J.; Greenwald, A.C.

    1978-11-01

    Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As + ions to a dose of approx. 1 x 10 16 ions/cm 2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery

  2. Unusual hardening behaviour in heavily cryo-rolled Cu-Al-Zn alloys during annealing treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Y.L. [Faculty of Science, Kunming University of Science and Technology, Kunming 650500 (China); Ren, S.Y. [Ningbo Powerway Alloy Material Co., Ltd, Ningbo 315135 (China); Zeng, S.D. [Yunnan Institute of Measuring and Testing Technology, Kunming 650228 (China); Zhu, X.K., E-mail: xk_zhu@hotmail.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650500 (China)

    2016-04-06

    Three nanostructured Cu-Al-Zn alloys were produced via rolling at the liquid nitrogen temperature. The deformed Cu alloys were then annealed at 150–300 °C for 1 h. The two alloys with high solute content and thus with low stacking fault energy exhibit unusual annealing hardening, namely, an increase in hardness and strength and a decrease in tensile elongation after annealing at 150 and 200 °C. From X-ray diffraction (XRD) analysis and microstructural observations by transmission electron microscopy (TEM), it is found that microstrain and dislocation density decrease after annealing at 200 °C because of the recovery of dislocations and the lattice parameter decreases due to solute segregation. Meanwhile, the twin density of the two Cu alloys increases and grain size remains basically unchanged. It is shown that the formation of annealing twins and stacking faults and the segregation of solute atoms may be the main causes of unusual annealing hardening.

  3. Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com; Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com; Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com [NANO-ElecTronic Centre (NET), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my [Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-Science Technology (NST), Institute of Science (IOS), Faculty of Applied Sciences, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Herman, S. H., E-mail: hana1617@salam.uitm.edu.my [Core of Frontier Materials & Industry Applications, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  4. Defect evolution and dopant activation in laser annealed Si and Ge

    DEFF Research Database (Denmark)

    Cristiano, F.; Shayesteh, M.; Duffy, R.

    2016-01-01

    Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

  5. A New Heuristic Providing an Effective Initial Solution for a Simulated Annealing approach to Energy Resource Scheduling in Smart Grids

    DEFF Research Database (Denmark)

    Sousa, Tiago M; Morais, Hugo; Castro, R.

    2014-01-01

    scheduling problem. Therefore, the use of metaheuristics is required to obtain good solutions in a reasonable amount of time. This paper proposes two new heuristics, called naive electric vehicles charge and discharge allocation and generation tournament based on cost, developed to obtain an initial solution...... to be used in the energy resource scheduling methodology based on simulated annealing previously developed by the authors. The case study considers two scenarios with 1000 and 2000 electric vehicles connected in a distribution network. The proposed heuristics are compared with a deterministic approach...

  6. Microstructural evolution and magnetic properties of ultrafine solute-atom particles formed in a Cu75-Ni20-Fe5 alloy on isothermal annealing

    Science.gov (United States)

    Kim, Jun-Seop; Takeda, Mahoto; Bae, Dong-Sik

    2016-12-01

    Microstructural features strongly affect magnetism in nano-granular magnetic materials. In the present work we have investigated the relationship between the magnetic properties and the self-organized microstructure formed in a Cu75-Ni20-Fe5 alloy comprising ferromagnetic elements and copper atoms. High resolution transmission electron microscopy (HRTEM) observations showed that on isothermal annealing at 873 K, nano-scale solute (Fe,Ni)-rich clusters initially formed with a random distribution in the Cu-rich matrix. Superconducting quantum interference device (SQUID) measurements revealed that these ultrafine solute clusters exhibited super-spinglass and superparamagnetic states. On further isothermal annealing the precipitates evolved to cubic or rectangular ferromagnetic particles and aligned along the directions of the copper-rich matrix. Electron energy-band calculations based on the first-principle Korringa-Kohn-Rostocker (KKR) method were also implemented to investigate both the electronic structure and the magnetic properties of the alloy. Inputting compositions obtained experimentally by scanning transmission electron microscopy-electron dispersive X-ray spectroscopy (STEM-EDS) analysis, the KKR calculation confirmed that ferromagnetic precipitates (of moment 1.07μB per atom) formed after annealing for 2 × 104 min. Magneto-thermogravimetric (MTG) analysis determined with high sensitivity the Curie temperatures and magnetic susceptibility above room temperature of samples containing nano-scale ferromagnetic particles.

  7. Improved AMOLED with aligned poly-Si thin-film transistors by laser annealing and chemical solution treatments

    International Nuclear Information System (INIS)

    Wu, G.M.; Chen, C.N.; Feng, W.S.; Lu, H.C.

    2009-01-01

    Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFT) were prepared for the active-matrix organic light-emitting displays (AMOLED). The excimer laser annealing (ELA) recrystallization technique was employed with a chemical solution treatment process to improve the TFT characteristic uniformity and the AMOLED display image quality. The characteristics of the poly-Si array thin films were influenced by XeCl ELA optic module design, TFT device channel direction, and laser irradiation overlap ratio. The ELA system module provided aligned poly-Si grain size of 0.3 μm by the homogenization lens design. The chemical solution treatment process included a dilute HF solution (DHF), ozone (O 3 ) water, and buffer oxide etching solution (BOE). The PMOS TFT showed better field effect mobility of 87.6 cm 2 /V s, and the threshold voltage was -1.35 V. The off current (I off ) was 1.25x10 -11 A, and the on/off current ratio was 6.27x10 6 . In addition, the image quality of the AMOLED display was highly improved using the 2T1C structure design without any compensation circuit.

  8. Effects of annealing schedule on orientation of Bi3.2Nd0.8Ti3O12 ferroelectric film prepared by chemical solution deposition process

    International Nuclear Information System (INIS)

    He, H.Y.; Huang, J.F.; Cao, L.Y.; Wang, L.S.

    2006-01-01

    Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented films with degree of orientation of I (200) /I (117) = 2.097 and 0.466 were obtained by preannealing for 10 min at 400 deg. C followed by rapid thermal annealing for 3, 10 and 20 min at 700 deg. C, respectively (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 1.706 were obtained by rapid thermal annealing for 3 min at 700 deg. C without preannealing, and (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 0.719 were obtained by preheating the film from room temperature at 20 deg. C/min followed by annealing for 10 min at 700 deg. C. The a-axis and c-axis orientation decreased as increase of annealing time due to effects of (1 1 1)-oriented substrate. AFM analysis further indicated that preannealing at 400 deg. C for 10 min followed by rapid thermal annealing for 3 min at 700 deg. C resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing for 3 min at 700 deg. C without preannealing resulted in columnar crystallite perpendicular to substrate surface

  9. Influence of oxygen on the annealing of radioactive defects in germanium

    International Nuclear Information System (INIS)

    Gasimov, G.M.; Mustafayev, Yn.M.; Gasimova, V.G.

    2002-01-01

    The isochronal annealing were carried out in the wide temperature range, for the establishment of oxygen influence on the annealing of radioactive defects (Rd) in any radiated germanium samples, concentrated with oxygen up to concentration of 9.7·10 16 cm -3 . It is shown that the curves of isochronal annealing of one of the such samples 1, with primary current charge concentration of 9.0·10 cm 14 , radiated by integral electron flow of φ= 8.0·10 16 cm -3 , at 293 K and also the non-oxygen samples 2, with primary concentration of 1.7·10 cm -3 , radiated at above mentioned conditions. The sample 1 is converted by radiation to p-type, but the conversion not occur in samples 2. It is illustrated, that that there is two annealing stage at 340-430 K, for the samples 2, which in results takes place the complete annealing of the RD. At 300 K the annealing takes place in samples of 1, but at 340 K - the reverse annealing of RD. The sample was at compensated state in the temperature range of 360-400 K. An annealing of RD takes place again at 440 K and the sample re-converted its conductivity type. The reverse annealing at 480 K, and at about 510 K, the substantial annealing of the defects has been observed, which in results a sample restores it's primary parameters. The carried out experiments show that as in converted, and also in n-type be samples, Is observed the reverse annealing of RD, but the reverse annealing of current charge carriers in n-type samples is observed only at such conditions, of the integral flow of accelerated elections exceeds the primary concentration of current charge carriers about 4 time of magnitude (φ≥4n 0 ). Besides, the complete annealing of RD in germanium samples concentrated with oxygen, takes place at more high temperatures in comparison with the non-oxygen samples

  10. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  11. Chaotic Multiquenching Annealing Applied to the Protein Folding Problem

    Directory of Open Access Journals (Sweden)

    Juan Frausto-Solis

    2014-01-01

    Full Text Available The Chaotic Multiquenching Annealing algorithm (CMQA is proposed. CMQA is a new algorithm, which is applied to protein folding problem (PFP. This algorithm is divided into three phases: (i multiquenching phase (MQP, (ii annealing phase (AP, and (iii dynamical equilibrium phase (DEP. MQP enforces several stages of quick quenching processes that include chaotic functions. The chaotic functions can increase the exploration potential of solutions space of PFP. AP phase implements a simulated annealing algorithm (SA with an exponential cooling function. MQP and AP are delimited by different ranges of temperatures; MQP is applied for a range of temperatures which goes from extremely high values to very high values; AP searches for solutions in a range of temperatures from high values to extremely low values. DEP phase finds the equilibrium in a dynamic way by applying least squares method. CMQA is tested with several instances of PFP.

  12. Nitrogen aggregation in Ib type synthetic diamonds at low pressure and high-temperature annealing

    International Nuclear Information System (INIS)

    Kazyuchits, N.M.; Rusetskij, M.S.; Latushko, Ya.I.; Kazyuchits, V.N.; Zajtsev, A.M.

    2015-01-01

    A new technique for annealing of diamonds at low pressure and high temperature (LPHT) is considered. The absorption spectra of synthetic Ib diamonds are given before and after annealing. This is evident from a comparison of the spectra that nitrogen aggregation process takes place at the LPHT annealing diamond. (authors)

  13. Infrared absorption studies of the annealing of irradiated diamonds

    International Nuclear Information System (INIS)

    Woods, G.S.

    1984-01-01

    Natural (types Ia and IIa) and synthetic (type Ib) diamonds have been irradiated with energetic electrons and neutrons and then heated at temperatures up to 1400 deg C. Attendant changes in the infrared absorption spectra, especially above the Raman frequency (1332 cm -1 ), have been monitored. The most prominent absorption to develop in the infrared region proper, on annealing both type Ia and type Ib specimens, whether electron- or neutron-irradiated is the H1a line at 1450 cm -1 . Measurements taken of neutron-irradiated type Ia specimens show that the strength of this line is specimen-dependent, and that it is a linear function of radiation dose. Isochronal annealing studies show that the onset of the line occurs during heating at 250 deg C for type Ia specimens and at 650 deg C for type Ib specimens. The absorption begins to weaken during heating at 1100 deg C, but it is very persistent, surviving an anneal of 4 hours at 1400 deg C, albeit with diminished intensity. Three other weaker lines at 1438, 1358 and 1355 cm -1 develop with the 1450 cm -1 line, but differ from it and from each other in subsequent annealing behaviour. Other lines were observed; these are reported and discussed. (author)

  14. Maximum-Entropy Inference with a Programmable Annealer

    Science.gov (United States)

    Chancellor, Nicholas; Szoke, Szilard; Vinci, Walter; Aeppli, Gabriel; Warburton, Paul A.

    2016-03-01

    Optimisation problems typically involve finding the ground state (i.e. the minimum energy configuration) of a cost function with respect to many variables. If the variables are corrupted by noise then this maximises the likelihood that the solution is correct. The maximum entropy solution on the other hand takes the form of a Boltzmann distribution over the ground and excited states of the cost function to correct for noise. Here we use a programmable annealer for the information decoding problem which we simulate as a random Ising model in a field. We show experimentally that finite temperature maximum entropy decoding can give slightly better bit-error-rates than the maximum likelihood approach, confirming that useful information can be extracted from the excited states of the annealer. Furthermore we introduce a bit-by-bit analytical method which is agnostic to the specific application and use it to show that the annealer samples from a highly Boltzmann-like distribution. Machines of this kind are therefore candidates for use in a variety of machine learning applications which exploit maximum entropy inference, including language processing and image recognition.

  15. The relation between the kink-type solution and the kink-bell-type solution of nonlinear evolution equations

    International Nuclear Information System (INIS)

    Liu Chunping

    2003-01-01

    Using a direct algebraic method, more new exact solutions of the Kolmogorov-Petrovskii-Piskunov equation are presented by formula form. Then a theorem concerning the relation between the kink-type solution and the kink-bell-type solution of nonlinear evolution equations is given. Finally, the applications of the theorem to several well-known equations in physics are also discussed

  16. Fabrication of sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions with rapid annealing method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Song; Wang, Xu; Ma, Junli; Cui, Ruirui; Deng, Chaoyong, E-mail: cydeng@gzu.edu.cn

    2015-11-15

    Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated using magnetron sputtering system. The rapid-anneal process was adopted to replace traditional way of annealing, trying to solve the problem of interdiffusion and oxidation with multilayer films. The boron film was used as barrier layer to avoid the introduction of impurities and improve reproducibility of the junctions. The bottom MgB{sub 2} thin films deposited on c-plane sapphire substrate exhibits a critical temperature T{sub C} of 37.5 K and critical current density J{sub C} at 5 K of 8.7 × 10{sup 6} A cm{sup −2}. From the XRD pattern, the bottom MgB{sub 2} thin film shows c-axis orientation, whereas the top MgB{sub 2} became polycrystalline as Boron barrier layer grown thicker. Therefore, all junction samples show lower T{sub C} than single MgB{sub 2} thin film. The junctions exhibit excellent quasiparticle characteristics with ideal dependence on temperature and Boron barrier thickness. Subharmonic gap structure was appeared in conductance characteristics, which was attributed to the multiple Andreev reflections (MAR). The result demonstrates great promise of this new fabrication technology for MgB{sub 2} Josephson junction fabrication. - Highlights: • Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated. • The junctions were annealed after deposition with the rapid-anneal process. • The highest critical current is 25.3 mA at 5 K and remains non-zero near 25 K. • Subharmonic gap features can be observed in the dI/dV – V curves.

  17. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyunpil Boo

    2012-01-01

    Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

  18. Effect of annealing temperature on microstructure and superelastic properties of a Ti-18Zr-4.5Nb-3Sn-2Mo alloy.

    Science.gov (United States)

    Fu, Jie; Kim, Hee Young; Miyazaki, Shuichi

    2017-01-01

    In this study a new superelastic Ti-18Zr-4.5Nb-3Sn-2Mo alloy was prepared by adding 2at% of Mo as a substitute for Nb to the Ti-18Zr-11Nb-3Sn alloy, and heat treatment at different temperatures was conducted. The temperature dependence of superelasticity and annealing texture was investigated. Texture showed a dependence of annealing temperature: the specimen annealed at 923K for 0.3ks exhibited {113} β β type texture which was similar to the deformation texture, while specimens annealed at 973, 1073K, and 1173K showed {001} β β type recrystallization texture which was preferable for recovery strain. The largest recovery strain of 6.2%, which is the same level as that of the Ti-18Zr-11Nb-3Sn alloy, was obtained in the specimen annealed at 1173K for 0.3ks due to the well-developed {001} β β type recrystallization texture. The Ti-18Zr-3Nb-3Sn-2Mo alloy presented a higher tensile strength compared with the Ti-18Zr-11Nb-3Sn alloy when heat treated at 1173K for 0.3ks, which was due to the solid solution strengthening effect of Mo. Annealing at 923K for 0.3ks was effective in obtaining a good combination of a high strength as 865MPa and a large recovery strain as 5.6%. The high recovery strain was due to the high stress at which the maximum recovery stain was obtained which was attributed to the small grain size formed at low annealing temperature. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing process

    International Nuclear Information System (INIS)

    Kim, Sun Jin; We, Ju Hyung; Kim, Jin Sang; Kim, Gyung Soo; Cho, Byung Jin

    2014-01-01

    Highlights: • We report on thermoelectric properties of screen-printed Sb 2 Te 3 thick film. • Subsequent annealing process determines thermoelectric properties of Sb 2 Te 3 film. • Annealing in tellurium powder ambient contributes to tellurium-rich Sb 2 Te 3 film. • Annealing in tellurium powder ambient enhances carrier mobility of Sb 2 Te 3 film. -- Abstract: We herein report the thermoelectric properties of Sb 2 Te 3 thick film fabricated by a screen-printing technique and a subsequent annealing process. Each step of the screen-printing fabrication process of Sb 2 Te 3 thick film is described in detail. It was found that the subsequent annealing process must be carefully designed to achieve good thermoelectric properties of the screen-printed film. The results show that the annealing of the screen-printed Sb 2 Te 3 thick film together with tellurium powder in the same process chamber significantly improves the carrier mobility by increasing the average scattering time of the carrier in the film, resulting in a large improvement of the power factor. By optimizing the annealing process, we achieved a maximum thermoelectric figure-of-merit, ZT, of 0.32 at room temperature, which is slightly higher than that of bulk Sb 2 Te 3 . Because screen-printing is a simple and low-cost process and given that it is easy to scale up to large sizes, this result will be useful for the realization of large, film-type thermoelectric devices

  20. Evolution of the radiation-induced defect structure in 316 type stainless steel after post-irradiation annealing

    Energy Technology Data Exchange (ETDEWEB)

    Van Renterghem, W., E-mail: wvrenter@sckcen.be; Konstantinović, M.J., E-mail: mkonstan@sckcen.be; Vankeerberghen, M., E-mail: mvankeer@sckcen.be

    2014-09-15

    Highlights: • TEM study of irradiated CW316 steel after post-irradiation annealing. • Frank loops were removed after annealing at 550 °C, by unfaulting and growing. • The cavity density decreases after annealing at 550 °C, but not completely removed. • Frank loop and cavity removal is controlled by the annealing temperature. • The dissolution of γ' precipitates is controlled by the iron diffusion length. - Abstract: The thermal stability of Frank loops, black dots, cavities and γ′ precipitates in an irradiated 316 stainless steel was studied by transmission electron microscopy. The samples were retrieved from a thimble tube irradiated at around 320 °C up to 80 dpa in a commercial nuclear power reactor, and thermally annealed, varying both annealing temperature and time. With increasing annealing temperature the density of all defects gradually decreased, resulting in the complete removal of Frank loops at 550 °C. In contrast to other defects, the density of the γ′ precipitates sharply decreased with increasing annealing time, which indicates that the dissolution of the γ′ precipitates is governed by the iron diffusion length.

  1. Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

    Science.gov (United States)

    Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

    2014-02-12

    Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

  2. A Simple Solution to Type Specialization

    DEFF Research Database (Denmark)

    Danvy, Olivier

    1998-01-01

    Partial evaluation specializes terms, but traditionally this specialization does not apply to the type of these terms. As a result, specializing, e.g., an interpreter written in a typed language, which requires a “universal” type to encode expressible values, yields residual programs with type tags...... all over. Neil Jones has stated that getting rid of these type tags was an open problem, despite possible solutions such as Torben Mogensen's “constructor specialization.” To solve this problem, John Hughes has proposed a new paradigm for partial evaluation, “Type Specialization”, based on type...... inference instead of being based on symbolic interpretation. Type Specialization is very elegant in principle but it also appears non-trivial in practice. Stating the problem in terms of types instead of in terms of type encodings suggests a very simple type-directed solution, namely, to use a projection...

  3. The effect of annealing atmosphere on the thermoluminescence of synthetic calcite

    International Nuclear Information System (INIS)

    Pagonis, Vasilis

    1998-01-01

    Samples of high purity calcite powder were annealed in air, nitrogen and carbon dioxide atmospheres in the temperature range 300-700 deg. C and in atmospheric pressure. The samples were subsequently irradiated and the effect of the annealing atmosphere and temperature on the thermoluminescence (TL) of the samples was studied. Our results show that both carbonate and oxygen ions play an important part in the TL of calcite annealed in this temperature range. The intensities of the TL signal in the nitrogen and carbon dioxide anneals rise continuously with the annealing temperature. For all annealing temperatures it was found that the carbon dioxide atmosphere caused an increase in the observed TL signal as compared with anneals in an inert nitrogen atmosphere, while the shape of the TL glow curves remained the same. This increase in the observed TL signal is explained via the surface adsorption of carbonate ions. The shape and location of the TL peaks suggest that samples annealed in air exhibit a different type of TL center than samples annealed in nitrogen and carbon dioxide atmospheres. A possible mechanism for the role of oxygen ions involves a surface adsorption process and a subsequent diffusion of oxygen ions in the bulk of the crystal. Annealing of the samples in air at temperatures T>600 deg. C causes a collapse of the TL signal, in agreement with previous studies of calcite powders. No such collapse of the TL signal is observed for the nitrogen and carbon dioxide anneals, suggesting that a different type of TL center and/or recombination center is involved in air anneals. Arrhenius plots for the air anneals yield an activation energy E=0.45±0.05 eV, while the carbon dioxide and nitrogen anneals yield a lower activation energy E=0.28±0.04 eV

  4. Thermal annealing studies in muscovite and in quartz

    International Nuclear Information System (INIS)

    Roberts, J.H.; Gold, R.; Ruddy, F.H.

    1979-06-01

    In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

  5. Effects of hydrothermal annealing on characteristics of CuInS{sub 2} thin films by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Shi Yong, E-mail: sys-99@163.com [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China); Xue Fanghong [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China); Li Chunyan [School of Materials, Dalian University of Technology, Dalian 116024 (China); Zhao Qidong; Qu Zhenping; Li Xinyong [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China)

    2012-07-15

    CuInS{sub 2} thin films have been deposited by successive ionic layer absorption and reaction (SILAR) method, then annealed in a Na{sub 2}S solution (denoted as hydrothermal annealing) at 200 Degree-Sign C for different time. The effect of hydrothermal annealing on the properties of the films was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy. The XRD, TEM and SEM results indicate that well-crystallized CuInS{sub 2} films could be obtained after annealing in 0.1 mol/L Na{sub 2}S solution for 1.5 h. The annealed CuInS{sub 2} films were slightly S-rich and the direct band gap varied from 1.32 to 1.58 eV as the annealing time increased from 0.5 h to 2 h.

  6. Formation of microcracks during stress-relief annealing of a weldment in pressure vessel steel of type A508 C1 2

    International Nuclear Information System (INIS)

    Liljestrand, L.-G.; Oestberg, G.; Lindhagen, P.

    1978-01-01

    Crack formation in the heat-affected zones of heavy section weldments of type A 508 C1 2 pressure vessel steel during stress-relief annealing has been studied on an actual weldment and on simulated structures. Mechanical testing of the latter showed that stress relaxation of the order of magnitude occuring during stress-relief annealing can produce cracks of the same kind as occasionally found in weldments of pressure vessel steel. The primary cause is believed to be grain boundary sliding, possibly but not necessarily enhanced by impurities. (Auth.)

  7. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  8. Burst annealing of high temperature GaAs solar cells

    International Nuclear Information System (INIS)

    Brothers, P.R.; Horne, W.E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

  9. Effect of annealing temperature on the structural, photoluminescence and magnetic properties of sol-gel derived Magnetoplumbite-type (M-type) hexagonal strontium ferrite

    International Nuclear Information System (INIS)

    Teh, Geok Bee; Wong, Yat Choy; Tilley, Richard D.

    2011-01-01

    Magnetoplumbite-type (M-type) hexagonal strontium ferrite particles were synthesized via sol-gel technique employing ethylene glycol as the gel precursor at two different calcination temperatures (800 and 1000 deg. C). Structural properties were systematically investigated via X-ray diffraction (XRD), field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM), energy dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), photoluminescence spectrophotometry and superconducting quantum interference device magnetometer. XRD results showed that the sample synthesized at 1000 deg. C was of single-phase with a space group of P6 3 /mmc and lattice cell parameter values of a=5.882 A and c=23.048 A. EDS confirmed the composition of strontium ferrite calcined at 1000 deg. C being mainly of M-type SrFe 12 O 19 with HRTEM micrographs confirming the ferrites exhibiting M-type long range ordering along the c-axis of the crystal structure. The photoluminescence (PL) property of strontium ferrite was examined at excitation wavelengths of 260 and 270 nm with significant PL emission peaks centered at 350 nm being detected. Strontium ferrite annealed at higher temperature (1000 deg. C) was found to have grown into larger particle size, having higher content of oxygen vacancies and exhibited 83-85% more intense PL. Both the as-prepared strontium ferrites exhibited significant oxygen vacancies defect structures, which were verified via TGA. Higher calcination temperature turned strontium ferrite into a softer ferrite. - Highlights: → High annealing temperature produced M-type ferrite with higher oxygen vacancies. → Photoluminescence intensity is proportional to the existence of oxygen vacancies. → XRD data showed cell contraction well suited to the change of oxygen vacancies. → Shift in hysteresis loop due to defect-induced exchange bias was observed.

  10. Effect of annealing temperature on the structural, photoluminescence and magnetic properties of sol-gel derived Magnetoplumbite-type (M-type) hexagonal strontium ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Teh, Geok Bee, E-mail: sharonteh2009@gmail.com [Division of Bioscience and Chemistry, School of Arts and Science, Tunku Abdul Rahman College, Jalan Genting Kelang, 53300 Kuala Lumpur (Malaysia); Wong, Yat Choy [Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, PO Box 218, Hawthorn, Victoria 3122 (Australia); Tilley, Richard D. [School of Chemical and Physical Sciences, MacDiarmid Institute of Advanced Materials and Nanotechnology, Victoria University of Wellington, PO Box 600, Wellington (New Zealand)

    2011-09-15

    Magnetoplumbite-type (M-type) hexagonal strontium ferrite particles were synthesized via sol-gel technique employing ethylene glycol as the gel precursor at two different calcination temperatures (800 and 1000 deg. C). Structural properties were systematically investigated via X-ray diffraction (XRD), field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM), energy dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), photoluminescence spectrophotometry and superconducting quantum interference device magnetometer. XRD results showed that the sample synthesized at 1000 deg. C was of single-phase with a space group of P6{sub 3}/mmc and lattice cell parameter values of a=5.882 A and c=23.048 A. EDS confirmed the composition of strontium ferrite calcined at 1000 deg. C being mainly of M-type SrFe{sub 12}O{sub 19} with HRTEM micrographs confirming the ferrites exhibiting M-type long range ordering along the c-axis of the crystal structure. The photoluminescence (PL) property of strontium ferrite was examined at excitation wavelengths of 260 and 270 nm with significant PL emission peaks centered at 350 nm being detected. Strontium ferrite annealed at higher temperature (1000 deg. C) was found to have grown into larger particle size, having higher content of oxygen vacancies and exhibited 83-85% more intense PL. Both the as-prepared strontium ferrites exhibited significant oxygen vacancies defect structures, which were verified via TGA. Higher calcination temperature turned strontium ferrite into a softer ferrite. - Highlights: > High annealing temperature produced M-type ferrite with higher oxygen vacancies. > Photoluminescence intensity is proportional to the existence of oxygen vacancies. > XRD data showed cell contraction well suited to the change of oxygen vacancies. > Shift in hysteresis loop due to defect-induced exchange bias was observed.

  11. Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

    Science.gov (United States)

    Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

    2014-06-01

    The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

  12. Laser-annealed GaP OHMIC contacts for high-temperature devices

    International Nuclear Information System (INIS)

    Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

    1980-01-01

    The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

  13. Annealing effects on structure and mechanical properties of CoCrFeNiTiAlx high-entropy alloys

    International Nuclear Information System (INIS)

    Zhang, K B; Fu, Z Y; Zhang, J Y; Wang, W M; Lee, S W; Niihara, K

    2011-01-01

    Novel CoCrFeNiTiAl x (x:molar ratio, other elements are equimolar) high-entropy alloys were prepared by vacuum arc melting and these alloys were subsequently annealed at 1000 deg. C for 2 h. The annealing effects on structure and mechanical properties were investigated. Compared with the as-cast alloys, there are many complex intermetallic phases precipitated from the solid solution matrix in the as-annealed alloys with Al content lower than Al 1.0 . Only simple BCC solid solution structure appears in the as-annealed Al 1.5 and Al 2.0 alloys. This kind of alloys exhibit high resistance to anneal softening. Most as-annealed alloys possess even higher Visker hardness than the as-cast ones. The as-annealed Al 0.5 alloys shows the highest compressive strength while the Al 0 alloy exhibits the best ductility, which is about 2.6 GPa and 13%, respectively. The CoCrFeNiTiAl x high-entropy alloys possess integrated high temperature mechanical property as well.

  14. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  15. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

    2017-08-31

    Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

  16. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  17. Laser annealing heals radiation damage in avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

    2017-12-15

    Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

  18. Thermoluminescence of annealed and shock-loaded feldspar

    International Nuclear Information System (INIS)

    Hartmetz, C.P.

    1988-01-01

    Samples of oligoclase and bytownite were shock-loaded to a variety of pressures, and annealed for a variety of temperatures and times. The effect of Mrad doses of gamma-rays on oligoclase TL were also studied. After these treatments, thermoluminescence (TL) and X-ray diffraction (XRD) measurements were made to: (1) determine the effects of shock on terrestrial feldspar and compare with variations in the TL emission of ordinary chondrites (OCs); (2) determine if disordering in feldspar was responsible for any related changes in TL properties of OCs; (3) determine if the combined effect of shock plus annealing causes the changes in TL properties; (4) see if radiation damage from cosmic ray exposure plays a role in the TL variations; (5) examine the implications of this work to the thermal and shock histories of OCs. The lightly shock-loaded and annealed oligoclase samples have a dominant peak temperature of 120-140 C, identical to type 3.3-3.5 OCs. The heavily shocked samples dominant peak is at 230C, similar to type > 3.5 OCs . While the heavily annealed/disordered oligoclase samples have a peak at 280C, this peak is rarely observed in OCs. Radiation damage from Mrad doses of gamma-rays produced no change in peak temperature, but facilitated the shift to higher peak temperatures. The TL sensitivity of the shocked samples decreased by a factor of 25. Samples annealed at low temperatures (438-533C) showed a factor of 2 decrease in TL, but at the highest temperatures, the TL was a factor of 8 higher

  19. Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

    International Nuclear Information System (INIS)

    Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

    2002-01-01

    The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  20. Synthesis and characterization of nickel oxide particulate annealed at different temperatures

    Science.gov (United States)

    Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

    2018-04-01

    Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

  1. Extrapolation of zircon fission-track annealing models

    International Nuclear Information System (INIS)

    Palissari, R.; Guedes, S.; Curvo, E.A.C.; Moreira, P.A.F.P.; Tello, C.A.; Hadler, J.C.

    2013-01-01

    One of the purposes of this study is to give further constraints on the temperature range of the zircon partial annealing zone over a geological time scale using data from borehole zircon samples, which have experienced stable temperatures for ∼1 Ma. In this way, the extrapolation problem is explicitly addressed by fitting the zircon annealing models with geological timescale data. Several empirical model formulations have been proposed to perform these calibrations and have been compared in this work. The basic form proposed for annealing models is the Arrhenius-type model. There are other annealing models, that are based on the same general formulation. These empirical model equations have been preferred due to the great number of phenomena from track formation to chemical etching that are not well understood. However, there are two other models, which try to establish a direct correlation between their parameters and the related phenomena. To compare the response of the different annealing models, thermal indexes, such as closure temperature, total annealing temperature and the partial annealing zone, have been calculated and compared with field evidence. After comparing the different models, it was concluded that the fanning curvilinear models yield the best agreement between predicted index temperatures and field evidence. - Highlights: ► Geological data were used along with lab data for improving model extrapolation. ► Index temperatures were simulated for testing model extrapolation. ► Curvilinear Arrhenius models produced better geological temperature predictions

  2. Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

    Science.gov (United States)

    Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

    2017-06-01

    The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

  3. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  4. Modernization of two gas-fired shaft annealing furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Barthof, G.; Porst, G.; Raczek, S.

    1986-04-01

    The objective was to modernize two existing shaft-type annealing furnaces used for the heat treatment of grey iron castings with the aim of reducing the consumption of gaseous fuel, minimize the formation of scale, decrease maintenance expense and apply more automatic control to the annealing process. This was to be achieved by an optimum combination of new types of construction materials and advanced firing and control equipment. The author describes the furnace in its condition prior to and after reconstruction. The operating results obtained after reconstruction were found to justify the costs incurred. The payback period is roughly one year.

  5. A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

    Science.gov (United States)

    Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

    2017-04-01

    This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

  6. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  7. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  8. The annealing of interstitial carbon atoms in high-resistivity n-type silicon after proton irradiation

    CERN Document Server

    Kuhnke, M; Lindström, G

    2002-01-01

    The annealing of interstitial carbon C sub i after 7-10 MeV and 23 GeV proton irradiations at room temperature in high-resistivity n-type silicon is investigated. Deep level transient spectroscopy is used to determine the defect parameters. The annealing characteristics of the impurity defects C sub i , C sub i C sub s , C sub i O sub i and VO sub i suggest that the mobile C sub i atoms are also captured at divacancy VV sites at the cluster peripheries and not only at C sub s and O sub i sites in the silicon bulk. The deviation of the electrical filling characteristic of C sub i from the characteristic of a homogeneously distributed defect can be explained by an aggregation of C sub i atoms in the environment of the clusters. The capture rate of electrons into defects located in the cluster environment is reduced due to a positive space charge region surrounding the negatively charged cluster core. The optical filling characteristic of C sub i suggests that the change of the triangle-shaped electric field dis...

  9. Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

    Science.gov (United States)

    Choi, Young-Hwan; Ryu, Han-Youl

    2018-04-01

    We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

  10. An Improved Simulated Annealing Technique for Enhanced Mobility in Smart Cities

    Directory of Open Access Journals (Sweden)

    Hayder Amer

    2016-06-01

    Full Text Available Vehicular traffic congestion is a significant problem that arises in many cities. This is due to the increasing number of vehicles that are driving on city roads of limited capacity. The vehicular congestion significantly impacts travel distance, travel time, fuel consumption and air pollution. Avoidance of traffic congestion and providing drivers with optimal paths are not trivial tasks. The key contribution of this work consists of the developed approach for dynamic calculation of optimal traffic routes. Two attributes (the average travel speed of the traffic and the roads’ length are utilized by the proposed method to find the optimal paths. The average travel speed values can be obtained from the sensors deployed in smart cities and communicated to vehicles via the Internet of Vehicles and roadside communication units. The performance of the proposed algorithm is compared to three other algorithms: the simulated annealing weighted sum, the simulated annealing technique for order preference by similarity to the ideal solution and the Dijkstra algorithm. The weighted sum and technique for order preference by similarity to the ideal solution methods are used to formulate different attributes in the simulated annealing cost function. According to the Sheffield scenario, simulation results show that the improved simulated annealing technique for order preference by similarity to the ideal solution method improves the traffic performance in the presence of congestion by an overall average of 19.22% in terms of travel time, fuel consumption and CO2 emissions as compared to other algorithms; also, similar performance patterns were achieved for the Birmingham test scenario.

  11. An Improved Simulated Annealing Technique for Enhanced Mobility in Smart Cities.

    Science.gov (United States)

    Amer, Hayder; Salman, Naveed; Hawes, Matthew; Chaqfeh, Moumena; Mihaylova, Lyudmila; Mayfield, Martin

    2016-06-30

    Vehicular traffic congestion is a significant problem that arises in many cities. This is due to the increasing number of vehicles that are driving on city roads of limited capacity. The vehicular congestion significantly impacts travel distance, travel time, fuel consumption and air pollution. Avoidance of traffic congestion and providing drivers with optimal paths are not trivial tasks. The key contribution of this work consists of the developed approach for dynamic calculation of optimal traffic routes. Two attributes (the average travel speed of the traffic and the roads' length) are utilized by the proposed method to find the optimal paths. The average travel speed values can be obtained from the sensors deployed in smart cities and communicated to vehicles via the Internet of Vehicles and roadside communication units. The performance of the proposed algorithm is compared to three other algorithms: the simulated annealing weighted sum, the simulated annealing technique for order preference by similarity to the ideal solution and the Dijkstra algorithm. The weighted sum and technique for order preference by similarity to the ideal solution methods are used to formulate different attributes in the simulated annealing cost function. According to the Sheffield scenario, simulation results show that the improved simulated annealing technique for order preference by similarity to the ideal solution method improves the traffic performance in the presence of congestion by an overall average of 19.22% in terms of travel time, fuel consumption and CO₂ emissions as compared to other algorithms; also, similar performance patterns were achieved for the Birmingham test scenario.

  12. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  13. Hierarchical Network Design Using Simulated Annealing

    DEFF Research Database (Denmark)

    Thomadsen, Tommy; Clausen, Jens

    2002-01-01

    networks are described and a mathematical model is proposed for a two level version of the hierarchical network problem. The problem is to determine which edges should connect nodes, and how demand is routed in the network. The problem is solved heuristically using simulated annealing which as a sub......-algorithm uses a construction algorithm to determine edges and route the demand. Performance for different versions of the algorithm are reported in terms of runtime and quality of the solutions. The algorithm is able to find solutions of reasonable quality in approximately 1 hour for networks with 100 nodes....

  14. Simulated annealing algorithm for solving chambering student-case assignment problem

    Science.gov (United States)

    Ghazali, Saadiah; Abdul-Rahman, Syariza

    2015-12-01

    The problem related to project assignment problem is one of popular practical problem that appear nowadays. The challenge of solving the problem raise whenever the complexity related to preferences, the existence of real-world constraints and problem size increased. This study focuses on solving a chambering student-case assignment problem by using a simulated annealing algorithm where this problem is classified under project assignment problem. The project assignment problem is considered as hard combinatorial optimization problem and solving it using a metaheuristic approach is an advantage because it could return a good solution in a reasonable time. The problem of assigning chambering students to cases has never been addressed in the literature before. For the proposed problem, it is essential for law graduates to peruse in chambers before they are qualified to become legal counselor. Thus, assigning the chambering students to cases is a critically needed especially when involving many preferences. Hence, this study presents a preliminary study of the proposed project assignment problem. The objective of the study is to minimize the total completion time for all students in solving the given cases. This study employed a minimum cost greedy heuristic in order to construct a feasible initial solution. The search then is preceded with a simulated annealing algorithm for further improvement of solution quality. The analysis of the obtained result has shown that the proposed simulated annealing algorithm has greatly improved the solution constructed by the minimum cost greedy heuristic. Hence, this research has demonstrated the advantages of solving project assignment problem by using metaheuristic techniques.

  15. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  16. Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

    International Nuclear Information System (INIS)

    Wang, K.L.; Liu, Y.S.; Kirkpatrick, C.G.; Possin, G.E.

    1979-01-01

    This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes

  17. A cross-disciplinary introduction to quantum annealing-based algorithms

    Science.gov (United States)

    Venegas-Andraca, Salvador E.; Cruz-Santos, William; McGeoch, Catherine; Lanzagorta, Marco

    2018-04-01

    A central goal in quantum computing is the development of quantum hardware and quantum algorithms in order to analyse challenging scientific and engineering problems. Research in quantum computation involves contributions from both physics and computer science; hence this article presents a concise introduction to basic concepts from both fields that are used in annealing-based quantum computation, an alternative to the more familiar quantum gate model. We introduce some concepts from computer science required to define difficult computational problems and to realise the potential relevance of quantum algorithms to find novel solutions to those problems. We introduce the structure of quantum annealing-based algorithms as well as two examples of this kind of algorithms for solving instances of the max-SAT and Minimum Multicut problems. An overview of the quantum annealing systems manufactured by D-Wave Systems is also presented.

  18. Structural evolution of Fe-50 at.% Al powders during mechanical alloying and subsequent annealing processes

    International Nuclear Information System (INIS)

    Haghighi, Sh. Ehtemam; Janghorban, K.; Izadi, S.

    2010-01-01

    Iron aluminides, despite having desirable properties like excellent corrosion resistance, present low room-temperature ductility and low strength at high temperatures. Mechanical alloying as a capable process to synthesize nanocrystalline materials is under consideration to modify these drawbacks. In this study, the microstructure of iron aluminide powders synthesized by mechanical alloying and subsequent annealing was investigated. Elemental Fe and Al powders with the same atomic percent were milled in a planetary ball mill for 15 min to 100 h. The powder milled for 80 h was annealed at temperatures of 300, 500 and 700 o C for 1 h. The alloyed powders were disordered Fe(Al) solid solutions which were transformed to FeAl intermetallic after annealing. The effect of the milling time and annealing treatment on structural parameters, such as crystallite size, lattice parameter and lattice strain was evaluated by X-ray diffraction. Typically, these values were 15 nm, 2.92 A and 3.1% for the disordered Fe(Al) solid solution milled for 80 h and were 38.5 nm, 2.896 A and 1.2% for the FeAl intermetallic annealed at 700 o C, respectively.

  19. Alloying and microstructural changes in platinum–titanium milled and annealed powders

    International Nuclear Information System (INIS)

    Maweja, Kasonde; Phasha, M.J.; Yamabe-Mitarai, Y.

    2012-01-01

    Graphical abstract: (a) SE-SEM micrographs of PtTi martensite formed in powder milled for short time annealed at 1500 °C and quenched in helium gas flow (b) BSE-SEM of structure formed after slow cooling. Highlights: ► A disordered metastable FCC Pt(Ti) solid solution was formed after longer milling period. ► HCP Ti crystals were first deformed and then the atoms were dissolved in strained FCC Pt lattices. ► Longer milling time suppressed the occurrence of martensitic transformation after annealing. ► Martensite phase was formed in products that went through a short milling time then annealed and quenched. ► The width of the martensite features formed was smaller at higher cooling rates. - Abstract: Equiatomic platinum–titanium powder mixtures were processed by high energy ball milling under argon atmosphere and sintered under vacuum. Evolution of the crystal structures and microstructures of the products formed were investigated by XRD and SEM techniques, respectively. The HCP crystals of Ti were first deformed and then a disordered metastable FCC Pt(Ti) solid solution was formed during milling due to semi-coherency of FCC lattices. A nanostructured Pt(Ti) product was formed after long milling time, which contained 44–47 at.% Ti and 53–56 at.% Pt. An ordered PtTi intermetallic was formed by annealing the metastable Pt(Ti) at temperature above 1300 °C. The crystal structure and microstructure of the TiPt phase depended on the milling time, annealing temperature and the cooling rate. The B19 PtTi plate martensite was formed after annealing at 1500 °C and quenching at a cooling rate of 23 °C/min to 200 °C/min for short time milled products. The width of martensite features was smaller at high cooling rate. In PtTi products milled for longer time, no martensitic transformation was observed on cooling the annealed samples. Small amounts of Pt 5 Ti 3 were formed in the powders milled for 16 h or more, followed by annealing at 1500 °C and furnace

  20. Viral RNA annealing activities of human immunodeficiency virus type 1 nucleocapsid protein require only peptide domains outside the zinc fingers.

    Science.gov (United States)

    De Rocquigny, H; Gabus, C; Vincent, A; Fournié-Zaluski, M C; Roques, B; Darlix, J L

    1992-07-15

    The nucleocapsid (NC) of human immunodeficiency virus type 1 consists of a large number of NC protein molecules, probably wrapping the dimeric RNA genome within the virion inner core. NC protein is a gag-encoded product that contains two zinc fingers flanked by basic residues. In human immunodeficiency virus type 1 virions, NCp15 is ultimately processed into NCp7 and p6 proteins. During virion assembly the retroviral NC protein is necessary for core formation and genomic RNA encapsidation, which are essential for virus infectivity. In vitro NCp15 activates viral RNA dimerization, a process most probably linked in vivo to genomic RNA packaging, and replication primer tRNA(Lys,3) annealing to the initiation site of reverse transcription. To characterize the domains of human immunodeficiency virus type 1 NC protein necessary for its various functions, the 72-amino acid NCp7 and several derived peptides were synthesized in a pure form. We show here that synthetic NCp7 with or without the two zinc fingers has the RNA annealing activities of NCp15. Further deletions of the N-terminal 12 and C-terminal 8 amino acids, leading to a 27-residue peptide lacking the finger domains, have little or no effect on NC protein activity in vitro. However deletion of short sequences containing basic residues flanking the first finger leads to a complete loss of NC protein activity. It is proposed that the basic residues and the zinc fingers cooperate to select and package the genomic RNA in vivo. Inhibition of the viral RNA binding and annealing activities associated with the basic residues flanking the first zinc finger of NC protein could therefore be used as a model for the design of antiviral agents.

  1. The Effect of Annealing on the Elastic Modulus of Orthodontic Wires

    Science.gov (United States)

    Higginbottom, Kyle

    Introduction: Nickel Titanium orthodontic wires are currently used in orthodontic treatment due to their heat activated properties and their delivery of constant force. The objective of this study was to determine the effect of annealing on the elastic modulus of Nickel Titanium, Stainless Steel and Beta-titanium (TMA) wires. Different points along the wire were tested in order to determine how far from the annealed ends the elastic modulus of the wires was affected. Methods: Eighty (80) orthodontic wires consisting of 4 equal groups (SS/TMA/Classic NitinolRTM/Super Elastic NitinolRTM) were used as the specimens for this study. All wires were measured and marked at 5mm measurements, and cut into 33.00mm sections. The wires were heated with a butane torch until the first 13.00mm of the wires were red hot. Load deflection tests using an InstronRTM universal testing machine were run at 5mm distances from the end of the wire that had been annealed. The change in elastic modulus was then determined. Results: There was a significant difference (F = 533.001, p = 0.0005) in the change in elastic modulus for the four distances. There was also a significant difference (F = 57.571, p = 0.0005) in the change in elastic modulus for the four wire types. There was a significant interaction (F = 19.601, p = 0.005) between wire type and distance, however this interaction negated the differences between the wires. Conclusion: 1) There are significant differences in the changes in elastic modulus between the areas of the wires within the annealed section and those areas 5mm and 10mm away from the annealed section. The change in elastic modulus within the annealed section was significantly greater at 8 mm than it was at 13mm, and this was significantly greater than 18mm and 23mm (5mm and 10mm beyond the annealed section). However, there was no statistical difference in the change in elastic modulus between 5mm and 10mm away from the annealed section (18mm and 23mm respectively). 2

  2. Dosimetric characteristics of muscovite mineral studied under different annealing conditions

    International Nuclear Information System (INIS)

    Kalita, J M; Wary, G

    2015-01-01

    The annealing effect on the thermoluminescence (TL) characteristics of x-ray irradiated muscovite mineral relevant to dosimetry has been studied. For un-annealed and 473 K annealed samples an isolated TL peak has been observed at around 347 K; however, annealing at 573, 673 and 773 K two composite peaks have been recorded at around 347 and 408 K. Kinetic analysis reveals that there is a trap level at a depth of 0.71 eV, and due to annealing at 573 K (or above), a new trap level generates at 1.23 eV. The dosimetric characteristics, such as dose response, fading and reproducibility, have been studied in detail for all types of samples. The highest linear dose response has been observed from 10 to 2000 mGy in the 773 K annealed sample. Due to generation of the deep trap level, fading is found to reduce significantly just after annealing above 573 K. Reproducibility analysis shows that after 10 cycles of reuse the coefficient of variations in the results for 60, 180 and 1000 mGy dose irradiated 773 K annealed samples are found to be 1.78%, 1.37% and 1.58%, respectively. These analyses demand that after proper annealing muscovite shows important dosimetric features that are essentially required for a thermoluminescence dosimeter (TLD). (paper)

  3. Synthesis of TiO_2 thin films by the SILAR method and study of the influence of annealing on its structural, morphological and optical properties

    International Nuclear Information System (INIS)

    Jimenez-Garcia, F N; Segura-Giraldo, B; Restrepo-Parra, E; Lopez-Lopez, G A

    2015-01-01

    Preparation and characterization of TiO_2 films were made. Films were synthesized on glass substrates by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The preparation consisted of 150 cycles of a successive and alternate immersion of substrates in the precursor solution and in distilled water at 353 K. Growing was conducted at two conditions of the precursor solution which contained TiCl_3 and NH_2CONH_2: at room temperature and at 343 K. After the growth, films were annealed at 723 K for 2 hours. Regarding characterization, samples were studied using XRD, SEM and UV-Vis. Structural characterization results showed that, in general, the films presented an amorphous crystalline structure except those which were grown with precursor solution at 343 K and thermally treated after the growths, which presented an anatase crystalline structure. Concerning their morphology, a granular structure and a random distribution of a flower-like structure were observed. Grain sizes did not change significantly after annealing. The optical study was carried out taking into account an indirect transition allowed determining the band gap energy to be around 3.1 eV. This value, which is typical for TiO_2, decreases after annealing, usual for this type of films

  4. MOHOS-type memory performance using HfO{sub 2} nanoparticles as charge trapping layer and low temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico); Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer HfO{sub 2} nanoparticles used as charge trapping layer in MOHOS memory devices. Black-Right-Pointing-Pointer Increasing HfO{sub 2} nanoparticles concentration enhances charge injection and trapping. Black-Right-Pointing-Pointer Enhancement of memory performance with low temperature annealing. Black-Right-Pointing-Pointer Charge injection is done without using any hot-carrier injection mechanism. Black-Right-Pointing-Pointer Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO{sub 2} nanoparticles (np-HfO{sub 2}) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal-oxide-high-k-oxide-silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol-gel spin coating method after using different concentrations of np-HfO{sub 2} and low temperature annealing (down to 425 Degree-Sign C) in order to obtain charge-retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO{sub 2} concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO{sub 2} as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  5. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  6. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  7. Interference effect on annealing temperature of A and E centers in silicon.

    Science.gov (United States)

    Fang, P. H.; Tanaka, T.

    1971-01-01

    The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

  8. Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2018-02-01

    Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

  9. List-Based Simulated Annealing Algorithm for Traveling Salesman Problem

    Directory of Open Access Journals (Sweden)

    Shi-hua Zhan

    2016-01-01

    Full Text Available Simulated annealing (SA algorithm is a popular intelligent optimization algorithm which has been successfully applied in many fields. Parameters’ setting is a key factor for its performance, but it is also a tedious work. To simplify parameters setting, we present a list-based simulated annealing (LBSA algorithm to solve traveling salesman problem (TSP. LBSA algorithm uses a novel list-based cooling schedule to control the decrease of temperature. Specifically, a list of temperatures is created first, and then the maximum temperature in list is used by Metropolis acceptance criterion to decide whether to accept a candidate solution. The temperature list is adapted iteratively according to the topology of the solution space of the problem. The effectiveness and the parameter sensitivity of the list-based cooling schedule are illustrated through benchmark TSP problems. The LBSA algorithm, whose performance is robust on a wide range of parameter values, shows competitive performance compared with some other state-of-the-art algorithms.

  10. Cascade annealing: an overview

    International Nuclear Information System (INIS)

    Doran, D.G.; Schiffgens, J.O.

    1976-04-01

    Concepts and an overview of radiation displacement damage modeling and annealing kinetics are presented. Short-term annealing methodology is described and results of annealing simulations performed on damage cascades generated using the Marlowe and Cascade programs are included. Observations concerning the inconsistencies and inadequacies of current methods are presented along with simulation of high energy cascades and simulation of longer-term annealing

  11. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  12. Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation

    Science.gov (United States)

    Kim, Tae-Wan; Baek, Il-Jin; Cho, Won-Ju

    2018-02-01

    In this study, we employed microwave irradiation (MWI) at low temperature in the fabrication of solution-processed AlZnSnO (AZTO) resistive random access memory (ReRAM) devices with a structure of Ti/AZTO/Pt and compared the memory characteristics with the conventional thermal annealing (CTA) process. Typical bipolar resistance switching (BRS) behavior was observed in AZTO ReRAM devices treated with as-deposited (as-dep), CTA and MWI. In the low resistance state, the Ohmic conduction mechanism describes the dominant conduction of these devices. On the other hand, the trap-controlled space charge limited conduction (SCLC) mechanism predominates in the high resistance state. The AZTO ReRAM devices processed with MWI showed larger memory windows, uniform distribution of resistance state and operating voltage, stable DC durability (>103 cycles) and stable retention characteristics (>104 s). In addition, the AZTO ReRAM devices treated with MWI exhibited multistage storage characteristics by modulating the amplitude of the reset bias, and eight distinct resistance levels were obtained with stable retention capability.

  13. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-08-15

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

  14. Experimental quantum annealing: case study involving the graph isomorphism problem.

    Science.gov (United States)

    Zick, Kenneth M; Shehab, Omar; French, Matthew

    2015-06-08

    Quantum annealing is a proposed combinatorial optimization technique meant to exploit quantum mechanical effects such as tunneling and entanglement. Real-world quantum annealing-based solvers require a combination of annealing and classical pre- and post-processing; at this early stage, little is known about how to partition and optimize the processing. This article presents an experimental case study of quantum annealing and some of the factors involved in real-world solvers, using a 504-qubit D-Wave Two machine and the graph isomorphism problem. To illustrate the role of classical pre-processing, a compact Hamiltonian is presented that enables a reduced Ising model for each problem instance. On random N-vertex graphs, the median number of variables is reduced from N(2) to fewer than N log2 N and solvable graph sizes increase from N = 5 to N = 13. Additionally, error correction via classical post-processing majority voting is evaluated. While the solution times are not competitive with classical approaches to graph isomorphism, the enhanced solver ultimately classified correctly every problem that was mapped to the processor and demonstrated clear advantages over the baseline approach. The results shed some light on the nature of real-world quantum annealing and the associated hybrid classical-quantum solvers.

  15. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  16. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Directory of Open Access Journals (Sweden)

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  17. A unified phenomenological model for non-elastic deformation of Type 316 stainless steel

    International Nuclear Information System (INIS)

    Schmidt, C.G.; Miller, A.K.

    1981-01-01

    A complete model is provided for the non-elastic deformation of unaged type 316 stainless steel. The fitting flexibility, breadth of application, and predictive capabilities of the model are demonstrated for a wide variety of data. Satisfactory descriptions are given of the steady-state and transient creep behaviour as well as the monotonic stress-strain behaviour from the yield stress to steady-state flow. These descriptions apply over a broad range of temperatures and strain rates for both solution annealed and 20% cold worked material. Furthermore, cyclic stress-strain curves, cyclic hysteresis loops, and stress relaxation data are shown to be well described for solution annealed material. (author)

  18. Influence of alloying and secondary annealing on anneal hardening ...

    Indian Academy of Sciences (India)

    Unknown

    Influence of alloying and secondary annealing on anneal hardening effect at sintered copper alloys. SVETLANA NESTOROVIC. Technical Faculty Bor, University of Belgrade, Bor, Yugoslavia. MS received 11 February 2004; revised 29 October 2004. Abstract. This paper reports results of investigation carried out on sintered ...

  19. Air annealing induced transformation of cubic CdSe microspheres into hexagonal nanorods and micro-pyramids

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, Institute of Science, Mumbai 400032, M.S. (India); Lu, Shih-Yuan, E-mail: sylu@mx.nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu 30013, Taiwan (China)

    2015-08-15

    Highlights: • Nanocrystalline CdSe thin films were deposited using inexpensive CBD method. • Air annealing induced structural and interesting morphological transformation. • The as-deposited CdSe thin films showed a blue shift in its optical spectra. • The films showed a red shift in their optical spectra after annealing. - Abstract: CdSe thin films have been deposited onto glass substrates using a chemical bath deposition method at relatively low temperatures (40 °C). The precursors used for the deposition of the thin films are cadmium nitrate hexahydrate, freshly prepared sodium selenosulfate solution and aqueous ammonia solution as a complex as well as pH adjusting reagent. In order to study the influence of air annealing on their physicochemical properties, the as-deposited CdSe thin films were further annealed at 200 °C and 400 °C for 3 h in air atmosphere. Significant changes in the morphology and photonic properties were clearly observed after the thermal annealing of the CdSe thin films. The as-deposited CdSe films grow with the cubic phase that transforms into mixed cubic and hexagonal wurtzite phase with improved crystalline quality of the films after the air annealing. Morphological observation reveals that the as-deposited thin films grow with multilayer that consists of network or mesh like structure, uniformly deposited on the glass substrate over which microspheres are uniformly distributed. After air annealing, CdSe nanorods emerged from the microspheres along with conversion of few microspheres into micro-pyramids. The UV–visible study illustrates that the as-deposited thin film shows blue shifts in its optical spectrum and the spectrum was red-shifted after annealing the CdSe thin films. The band gap of the CdSe thin films were found to be decreased after the thermal treatment.

  20. Effect of cold working and annealing on stress corrosion cracking of AISI 304 stainless steel

    International Nuclear Information System (INIS)

    Yeon, Y.M.; Kwun, S.I.

    1983-01-01

    A study was made of the effects of cold working and annealing on the stress corrosion cracking of AISI 304 stainless steel in boiling 42% MgCl 2 solution. When the 60% or 76% of yield stress was applied, the resistance to SCC showed maximum at 30% of cold work. However, when the same load was applied to the annealed specimens after cold working, the resistance to SCC decreased abruptly at 675degC annealing. The fracture mode changed mode change mixed → intergranular → transgranular as the amount of cold work increased. (Author)

  1. Annealed n-vector p spin model

    International Nuclear Information System (INIS)

    Taucher, T.; Frankel, N.E.

    1992-01-01

    A disordered n-vector model with p spin interactions is introduced and studied in mean field theory for the annealed case. The complete solutions for the cases n = 2 and n = 3, is presented and explicit order parameter equations is given for all the stable solutions for arbitrary n. For all n and p was found on stable high temperature phase and one stable low temperature phase. The phase transition is of first order. For n = 2, it is continuous in the order parameters for p ≤ 4 and has a jump discontinuity in the order parameters if p > 4. For n = 3, it has a jump discontinuity in the order parameters for all p. 11 refs., 4 figs

  2. Periodic solutions ofWick-type stochastic Korteweg–de Vries ...

    Indian Academy of Sciences (India)

    Periodic solutions ofWick-type stochastic Korteweg–de Vries equations ... Finding exact solutions of the Wick-type stochastic equation will be helpful in the theories and numerical studies of such ... Pramana – Journal of Physics | News.

  3. CrCuAgN PVD nanocomposite coatings: Effects of annealing on coating morphology and nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xingguang, E-mail: xingguangliu1@gmail.com [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Iamvasant, Chanon, E-mail: ciamvasant1@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Liu, Chang, E-mail: chang.liu@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Matthews, Allan, E-mail: allan.matthews@manchester.ac.uk [Pariser Building - B24 ICAM, School of Materials, The University of Manchester, Manchester, M13 9PL (United Kingdom); Leyland, Adrian, E-mail: a.leyland@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

    2017-01-15

    Highlights: • Coatings with nitrogen content up to 16 at.% exhibit a metallic Cr solid solution, even after post-coat annealing at 300 °C and 500 °C. • At higher N/Cr atomic ratios (approaching Cr{sub 2}N stoichiometry), chromium was still inclined to exist in solid solution with nitrogen, rather than as a ceramic nitride phase, even after annealing at 500 °C. • Transportation of Cu and Ag to the surface depends on annealing temperature, annealing duration, nitrogen concentration and ‘global’ Cu + Ag concentration. • Incorporation of copper appears to be a powerful strategy to enhance Ag mobility at low concentration (∼3 at.% Ag in this study) under moderately high service temperature. • A significant decrease in friction coefficient was obtained at room temperature after annealing, or during sliding wear testing at elevated temperature. - Abstract: CrCuAgN PVD nanocomposite coatings were produced using pulsed DC unbalanced magnetron sputtering. This investigation focuses on the effects of post-coat annealing on the surface morphology, phase composition and nanostructure of such coatings. In coatings with nitrogen contents up to 16 at.%, chromium exists as metallic Cr with N in supersaturated solid solution, even after 300 °C and 500 °C post-coat annealing. Annealing at 300 °C did not obviously change the phase composition of both nitrogen-free and nitrogen-containing coatings; however, 500 °C annealing resulted in significant transformation of the nitrogen-containing coatings. The formation of Ag aggregates relates to the (Cu + Ag)/Cr atomic ratio (threshold around 0.2), whereas the formation of Cu aggregates relates to the (Cu + Ag + N)/Cr atomic ratio (threshold around 0.5). The primary annealing-induced changes were reduced solubility of Cu, Ag and N in Cr, and the composition altering from a mixed ultra-fine nanocrystalline and partly amorphous phase constitution to a coarser, but still largely nanocrystalline structure. It was also

  4. Effects of metallurgical variables on hydrgen embrittlement in types 316, 321, and 347 stainless steels

    International Nuclear Information System (INIS)

    Rozenak, P.; Eliezer, D.

    1984-01-01

    Hydrogen embrittlement of 316, 321 and 347 types austenitic stainless steels has been studied by charging thin tensile specimens with hydrogen through cathodic polarization. Throughout this study we have compared solution annealed samples having various prior austenitic grain-size with samples given the additional sensitization treatment. The results show that refined grains improves the resistance to hydrogen cracking regardless of the failure mode. The sensitized specimens were predominantly intergranular, while the annealed specimens show massive regions of microvoid coalescence producing ductile rupture. 347 type stainless steel is much more susceptible to hydrogen embrittlement than 321 type steel, and 316 type is the most resistant to hydrogen embrittlement. the practical implication of the experimental conclusions are discussed

  5. Temperature distribution in graphite during annealing in air cooled reactors

    International Nuclear Information System (INIS)

    Oliveira Avila, C.R. de.

    1989-01-01

    A model for the evaluation temperature distributions in graphite during annealing operation in graphite. Moderated an-cooled reactors, is presented. One single channel and one dimension for air and graphite were considered. A numerical method based on finite control volumes was used for partioning the mathematical equations. The problem solution involves the use of unsteady equations of mass, momentum and energy conservation for air, and energy conservation for graphite. The source term was considered as stored energy release during annealing for describing energy conservation in the graphite. The coupling of energy conservation equations in air and graphite is performed by the heat transfer term betwen air and graphite. The results agree with experimental data. A sensitivity analysis shown that the termal conductivity of graphite and the maximum inlet channel temperature have great effect on the maximum temperature reached in graphite during the annealing. (author)

  6. Controllably annealed CuO-nanoparticle modified ITO electrodes: Characterisation and electrochemical studies

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tong; Su, Wen; Fu, Yingyi [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Hu, Jingbo, E-mail: hujingbo@bnu.edu.cn [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China)

    2016-12-30

    Graphical abstract: We report a simple and controllable synthesis of CuO-nanoparticle-modified ITO by employing a combination of ion-implantation and annealing methods for the first time. The optimum CuO/ITO electrode shows uniform morphology, highly accessible surface area, long-term stability and excellent electrochemical performance towards biomolecules such as glucose in alkaline solution. - Highlights: • Controllably annealed CuO/ITO electrode was synthesized for the first time. • The generation mechanism of CuO nanoparticles is revealed. • The optimum CuO/ITO electrode shows excellent electrochemical performance. • A reference for the controllable preparation of other metal oxide nanoparticles. - Abstract: In this paper, we report a facile and controllable two-step approach to produce indium tin oxide electrodes modified by copper(II) oxide nanoparticles (CuO/ITO) through ion implantation and annealing methods. After annealing treatment, the surface morphology of the CuO/ITO substrate changed remarkably and exhibited highly electroactive sites and a high specific surface area. The effects of annealing treatment on the synthesis of CuO/ITO were discussed based on various instruments’ characterisations, and the possible mechanism by which CuO nanoparticles were generated was also proposed in this work. Cyclic voltammetric results indicated that CuO/ITO electrodes exhibited effective catalytic responses toward glucose in alkaline solution. Under optimal experimental conditions, the proposed CuO/ITO electrode showed sensitivity of 450.2 μA cm{sup −2} mM{sup −1} with a linear range of up to ∼4.4 mM and a detection limit of 0.7 μM (S/N = 3). Moreover, CuO/ITO exhibited good poison resistance, reproducibility, and stability properties.

  7. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Lee, A.D.

    1997-01-01

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  8. A simple solution to type specialization

    DEFF Research Database (Denmark)

    Danvy, Olivier

    1998-01-01

    Partial evaluation specializes terms, but traditionally this specialization does not apply to the type of these terms. As a result, specializing, e.g., an interpreter written in a typed language, which requires a “universal” type to encode expressible values, yields residual programs with type tags...... all over. Neil Jones has stated that getting rid of these type tags was an open problem, despite possible solutions such as Torben Mogensen's “constructor specialization.” To solve this problem, John Hughes has proposed a new paradigm for partial evaluation, “Type Specialization”, based on type...... from the universal type to the specific type of the residual program. Standard partial evaluation then yields a residual program without type tags, simply and efficiently....

  9. Multiphase Simulated Annealing Based on Boltzmann and Bose-Einstein Distribution Applied to Protein Folding Problem.

    Science.gov (United States)

    Frausto-Solis, Juan; Liñán-García, Ernesto; Sánchez-Hernández, Juan Paulo; González-Barbosa, J Javier; González-Flores, Carlos; Castilla-Valdez, Guadalupe

    2016-01-01

    A new hybrid Multiphase Simulated Annealing Algorithm using Boltzmann and Bose-Einstein distributions (MPSABBE) is proposed. MPSABBE was designed for solving the Protein Folding Problem (PFP) instances. This new approach has four phases: (i) Multiquenching Phase (MQP), (ii) Boltzmann Annealing Phase (BAP), (iii) Bose-Einstein Annealing Phase (BEAP), and (iv) Dynamical Equilibrium Phase (DEP). BAP and BEAP are simulated annealing searching procedures based on Boltzmann and Bose-Einstein distributions, respectively. DEP is also a simulated annealing search procedure, which is applied at the final temperature of the fourth phase, which can be seen as a second Bose-Einstein phase. MQP is a search process that ranges from extremely high to high temperatures, applying a very fast cooling process, and is not very restrictive to accept new solutions. However, BAP and BEAP range from high to low and from low to very low temperatures, respectively. They are more restrictive for accepting new solutions. DEP uses a particular heuristic to detect the stochastic equilibrium by applying a least squares method during its execution. MPSABBE parameters are tuned with an analytical method, which considers the maximal and minimal deterioration of problem instances. MPSABBE was tested with several instances of PFP, showing that the use of both distributions is better than using only the Boltzmann distribution on the classical SA.

  10. Microstructure and electrical-optical properties of cesium tungsten oxides synthesized by solvothermal reaction followed by ammonia annealing

    International Nuclear Information System (INIS)

    Liu Jingxiao; Ando, Yoshihiko; Dong Xiaoli; Shi Fei; Yin Shu; Adachi, Kenji; Chonan, Takeshi; Tanaka, Akikazu; Sato, Tsugio

    2010-01-01

    Cesium tungsten oxides (Cs x WO 3 ) were synthesized by solvothermal reactions using ethanol and 57.1 vol% ethanol aqueous solution at 200 o C for 12 h, and the effects of post annealing in ammonia atmosphere on the microstructure and electrical-optical properties were investigated. Agglomerated particles consisting of disk-like nanoparticles and nanorods of Cs x WO 3 were formed in the pure ethanol and ethanol aqueous solutions, respectively. The samples retained the original morphology and crystallinity after annealing in ammonia atmosphere up to 500 o C, while a small amount of nitrogen ion were incorporated in the lattice. The as-prepared Cs x WO 3 sample showed excellent near infrared (NIR) light shielding ability as well as high transparency in the visible light region. The electrical resistivity of the pressed pellets of the powders prepared in pure ethanol and 57.1 vol% ethanol aqueous solution greatly decreased after ammonia annealing at 500 o C, i.e., from 734 to 31.5 and 231 to 3.58 Ω cm, respectively. - Graphical abstract: Cesium tungsten oxides (Cs x WO 3 ) with different morphology were synthesized by solvothermal reaction, and the effects of post-ammonia annealing on the microstructure and electrical-optical properties were investigated.

  11. Very fast simulated re-annealing

    OpenAIRE

    L. Ingber

    1989-01-01

    Draft An algorithm is developed to statistically find the best global fit of a nonlinear non-convex cost-function over a D-dimensional space. It is argued that this algorithm permits an annealing schedule for ‘‘temperature’’ T decreasing exponentially in annealing-time k, T = T0 exp(−ck1/D). The introduction of re-annealing also permits adaptation to changing sensitivities in the multidimensional parameter-space. This annealing schedule is faster than fast Cauchy annealing, ...

  12. Intelligent simulated annealing algorithm applied to the optimization of the main magnet for magnetic resonance imaging machine; Algoritmo simulated annealing inteligente aplicado a la optimizacion del iman principal de una maquina de resonancia magnetica de imagenes

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez Lopez, Hector [Universidad de Oriente, Santiago de Cuba (Cuba). Centro de Biofisica Medica]. E-mail: hsanchez@cbm.uo.edu.cu

    2001-08-01

    This work describes an alternative algorithm of Simulated Annealing applied to the design of the main magnet for a Magnetic Resonance Imaging machine. The algorithm uses a probabilistic radial base neuronal network to classify the possible solutions, before the objective function evaluation. This procedure allows reducing up to 50% the number of iterations required by simulated annealing to achieve the global maximum, when compared with the SA algorithm. The algorithm was applied to design a 0.1050 Tesla four coil resistive magnet, which produces a magnetic field 2.13 times more uniform than the solution given by SA. (author)

  13. Precipitation response of annealed type 316 stainless steel in HFIR irradiations at 550 to 6800C

    International Nuclear Information System (INIS)

    Maziasz, P.J.

    1978-01-01

    Precipitation in annealed type 316 stainless steel after HFIR irradiation at 550--680 0 C to fluences producing 2000--3300 at. ppM He and 30--47 dpa is changed relative to fast reactor or thermal aging exposure to similar temperatures and times. The phases observed after HFIR irradiation are the same as those observed after aging to temperatures 70--200 0 C higher or for much longer times. There is a similar temperature shift in addition to different phases observed for HFIR irradiation compared with EBR-II. The changes observed are coincident with including simultaneous helium production to high levels in the irradiation damage products of the material

  14. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kesler, V.G., E-mail: kesler@isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation); Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A. [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation)

    2010-05-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10{sup 8} cm{sup -2}, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  15. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    Science.gov (United States)

    Kesler, V. G.; Seleznev, V. A.; Kovchavtsev, A. P.; Guzev, A. A.

    2010-05-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 °C. Etching for 2-30 min resulted in the formation of "pits" and "hillocks" on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 × 10 8 cm -2, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 °C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the "pits" proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  16. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    International Nuclear Information System (INIS)

    Kesler, V.G.; Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A.

    2010-01-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10 8 cm -2 , entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  17. A Simulated Annealing-Based Heuristic Algorithm for Job Shop Scheduling to Minimize Lateness

    Directory of Open Access Journals (Sweden)

    Rui Zhang

    2013-04-01

    Full Text Available A decomposition-based optimization algorithm is proposed for solving large job shop scheduling problems with the objective of minimizing the maximum lateness. First, we use the constraint propagation theory to derive the orientation of a portion of disjunctive arcs. Then we use a simulated annealing algorithm to find a decomposition policy which satisfies the maximum number of oriented disjunctive arcs. Subsequently, each subproblem (corresponding to a subset of operations as determined by the decomposition policy is successively solved with a simulated annealing algorithm, which leads to a feasible solution to the original job shop scheduling problem. Computational experiments are carried out for adapted benchmark problems, and the results show the proposed algorithm is effective and efficient in terms of solution quality and time performance.

  18. Structure changes of Co-Ni-Al ferromagnetic shape memory alloys after vacuum annealing and hot rolling

    International Nuclear Information System (INIS)

    Maziarz, Wojciech

    2008-01-01

    The structure changes of vacuum annealed and hot rolled Co 35+x -Ni 40-x -Al 25 (x = 0, 2.5, 5.0) ferromagnetic shape memory alloys were examined by optical microscopy and X-ray diffraction measurements. Almost the same content of γ phase was observed in alloys after vacuum annealing. The change of grains morphology from dendrite in to equiaxed ones appeared after vacuum annealing. The hot rolling process was applied after annealing at 900 deg. C with thickness reduction up to about 90%. The structure of hot rolled samples revealed elongated grains of different phases. The hardness changes after heat treatment and plastic deformation processes have reflected the solution hardening and work hardening, respectively

  19. Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

    Science.gov (United States)

    Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

    2015-02-01

    In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

  20. Structural coarsening during annealing of an aluminum plate heavily deformed using ECAE

    DEFF Research Database (Denmark)

    Mishin, Oleg V.; Zhang, Yubin; Godfrey, A.

    2015-01-01

    The microstructure and softening behaviour have been investigated in an aluminum plate heavily deformed by equal channel angular extrusion and subsequently annealed at 170 °C. It is found that at this temperature the microstructure evolves by coarsening with no apparent signs of recrystallization...... even after 2 h of annealing. Both coarsening and softening are rapid within first 10 minutes of annealing followed by a slower evolution with increasing annealing duration. Evidence of triple junction (TJ) motion during coarsening is obtained by inspecting the microstructure in one region using...... the electron backscatter diffraction technique both before and after annealing for 10 minutes. The fraction of fast-migrating TJs is found to strongly depend of the type of boundaries composing a junction. The greatest fraction of fast-migrating TJs is in the group, where all boundaries forming a junction...

  1. Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    Seung Yeop Myong

    2007-01-01

    Full Text Available The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H- based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

  2. Different annealing temperature suitable for different Mg doped P-GaN

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  3. Dependence of boron cluster dissolution on the annealing ambient

    International Nuclear Information System (INIS)

    Radic, Ljubo; Lilak, Aaron D.; Law, Mark E.

    2002-01-01

    Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood process. In this letter we experimentally investigate the effect of the annealing ambient on boron reactivation kinetics. An oxidizing ambient which injects silicon interstitials is compared to an inert ambient. Contrary to published theory, an excess of interstitials does not accelerate the reactivation process

  4. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S. [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-12-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10{sup 17} cm{sup -3} at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As{sub Zn}(V{sub Zn}){sub 2} shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As{sub Zn}(V{sub Zn}){sub 2} acceptor and the creation of the deep level defect giving rise to the green luminescence.

  5. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    Science.gov (United States)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

    2011-12-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 °C. Post-growth annealing in air was carried out up to a temperature of 1000 °C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 °C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 × 1017 cm-3 at the annealing temperature of 600 °C. The origin of the p-type conductivity was consistent with the AsZn(VZn)2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the AsZn(VZn)2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

  6. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

    2011-01-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10 17 cm -3 at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As Zn (V Zn ) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn (V Zn ) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

  7. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  8. The Effect of Vacuum Annealing of Magnetite and Zero-Valent Iron Nanoparticles on the Removal of Aqueous Uranium

    Directory of Open Access Journals (Sweden)

    R. A. Crane

    2013-01-01

    Full Text Available As-formed and vacuum annealed zero-valent iron nanoparticles (nano-Fe0 and magnetite nanoparticles (nano-Fe3O4 were tested for the removal of uranium from carbonate-rich mine water. Nanoparticles were introduced to batch systems containing the mine water under oxygen conditions representative of near-surface waters, with a uranyl solution studied as a simple comparator system. Despite the vacuum annealed nano-Fe0 having a 64.6% lower surface area than the standard nano-Fe0, similar U removal (>98% was recorded during the initial stages of reaction with the mine water. In contrast, ≤15% U removal was recorded for the mine water treated with both as-formed and vacuum annealed nano-Fe3O4. Over extended reaction periods (>1 week, appreciable U rerelease was recorded for the mine water solutions treated using nano-Fe0, whilst the vacuum annealed material maintained U at <50 μg L−1 until 4 weeks reaction. XPS analysis of reacted nanoparticulate solids confirmed the partial chemical reduction of UVI to UIV in both nano-Fe0 water treatment systems, but with a greater amount of UIV detected on the vacuum annealed particles. Results suggest that vacuum annealing can enhance the aqueous reactivity of nano-Fe0 and, for waters of complex chemistry, can improve the longevity of aqueous U removal.

  9. The effects of different heat treatment annealing on structural properties of LaFe11.5Si1.5 compound

    Science.gov (United States)

    Norizan, Yang Nurhidayah Asnida; Din, Muhammad Faiz Md; Zamri, Wan Fathul Hakim W.; Hashim, Fakroul Ridzuan; Jusoh, Mohd Taufik; Rahman, Mohd Rashid Abdul

    2018-02-01

    The cubic NaZn13-type LaFe13-xSix based compounds have been studied systematically and has become one of the most interesting systems for exploring large MCE. Its magnetic properties are strongly doping dependent and provides many of advantage compare to other as magnetic materials for magnetic refrigerator application. In other to produce high quality of cubic NaZn13-type structure, the structural properties of LaFe11.5Si1.5 compounds annealed at different temperature have been investigated. The LaFe11.5Si1.5 compounds was prepared by arc melting and annealed at two different heat treatment which are 1323 K for 14 days and 1523 K for 4 hour. The powder X-ray diffraction (XRD) shows that a short time and high temperature annealing process has benefits for the formation of the NaZn13-type phase compared to a long time and low temperature annealing process. This is shown by the weight fraction of cubic NaZn13- type structure increases from 80% for low temperature annealing to 83% for high temperature annealing. At the same time, high temperature annealing increase the main structure and decrease the impurity (α-Fe and LaFeSi). Furthermore, it can be clearly seen in the Rietveld refinement results that the lattice parameter is increase at the high temperature annealing because of more cubic NaZn13 is formed at higher temperature.

  10. DOE's annealing prototype demonstration projects

    International Nuclear Information System (INIS)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-01-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy's Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana's Marble Hill nuclear power plant. The MPR team's annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company's nuclear power plant at Midland, Michigan. This paper describes the Department's annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges

  11. Effect of Thermal Annealing and Second Harmonic Generation on Bulk Damage Performance of Rapid-Growth KDP Type I Doublers at 1064 nm

    International Nuclear Information System (INIS)

    Runkel, M; Maricle, S; Torres, R; Auerbach, J; Floyd, R; Hawley-Fedder, R; Burnham, A K

    2000-01-01

    This paper discusses the results of thermal annealing and in-situ second harmonic generation (SHG) damage tests performed on six rapid growth KDP type 1 doubler crystals at 1064 nm (1 ω) on the Zeus automated damage test facility. Unconditioned (S/1) and conditioned (R/1) damage probability tests were performed before and after thermal annealing, then with and without SHG on six doubler crystals from the NIF-size, rapid growth KDP boule F6. The tests revealed that unannealed, last-grown material from the boule in either prismatic or pyramidal sectors exhibited the highest damage curves. After thermal annealing at 160 C for seven days, the prismatic sector samples increased in performance ranging from 1.6 to 2.4X, while material from the pyramidal sector increased only modestly, ranging from 1.0 to 1.4X. Second harmonic generation decreased the damage fluence by an average of 20 percent for the S/1 tests and 40 percent for R/1 tests. Conversion efficiencies under test conditions were measured to be 20 to 30 percent and compared quite well to predicted behavior, as modeled by LLNL frequency conversion computer codes. The damage probabilities at the 1 ω NIF redline fluence (scaled to 10 ns via t 0.5 ) for S/1 tests for the unannealed samples ranged from 20 percent in one sample to 90-100 percent for the other 5 samples. Thermal annealing reduced the damage probabilities to less than 35 percent for 3 of the poor-performing crystals, while two pyramidal samples remained in the 80 to 90 percent range. Second harmonic generation in the annealed crystal increased the S/1 damage probabilities on all the crystals and ranged from 40 to 100 percent. In contrast, R/1 testing of an unannealed crystal resulted in a damage probability at the NIF redline fluence of 16%. Annealing increased the damage performance to the extent that all test sites survived NIF redline fluences without damage. Second harmonic generation in the R/1 test yielded a damage probability of less than 2

  12. Growth of monodisperse nanocrystals of cerium oxide during synthesis and annealing

    International Nuclear Information System (INIS)

    Ghosh, Swapankumar; Divya, Damodaran; Remani, Kottayilpadi C.; Sreeremya, Thadathil S.

    2010-01-01

    Monodisperse cerium oxide nanocrystals have been successfully synthesised using simple ammonia precipitation technique from cerium(III) nitrate solution at different temperatures in the range 35-80 o C. The activation energy for growth of CeO 2 nanocrystals during the precipitation is calculated as 11.54 kJ/mol using Arrhenius plot. Average crystal diameter was obtained from XRD analysis, HR-TEM and light scattering (PCS). The analysis of size data from HR-TEM images and PCS clearly indicated the formation of highly crystalline CeO 2 particles in narrow size range. CeO 2 nanocrystals precipitated at 35 o C were further annealed at temperatures in the range 300-700 o C. The activation energy for crystal growth during annealing is also calculated and is close to the reported values. An effort is made to predict the mechanism of crystal growth during the precipitation and annealing.

  13. Kinetics of the electronic center annealing in Al2O3 crystals

    Science.gov (United States)

    Kuzovkov, V. N.; Kotomin, E. A.; Popov, A. I.

    2018-04-01

    The experimental annealing kinetics of the primary electronic F, F+ centers and dimer F2 centers observed in Al2O3 produced under neutron irradiation were carefully analyzed. The developed theory takes into account the interstitial ion diffusion and recombination with immobile F-type and F2-centers, as well as mutual sequential transformation with temperature of three types of experimentally observed dimer centers which differ by net charges (0, +1, +2) with respect to the host crystalline sites. The relative initial concentrations of three types of F2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

  14. Semiclassical approach to finite-temperature quantum annealing with trapped ions

    Science.gov (United States)

    Raventós, David; Graß, Tobias; Juliá-Díaz, Bruno; Lewenstein, Maciej

    2018-05-01

    Recently it has been demonstrated that an ensemble of trapped ions may serve as a quantum annealer for the number-partitioning problem [Nat. Commun. 7, 11524 (2016), 10.1038/ncomms11524]. This hard computational problem may be addressed by employing a tunable spin-glass architecture. Following the proposal of the trapped-ion annealer, we study here its robustness against thermal effects; that is, we investigate the role played by thermal phonons. For the efficient description of the system, we use a semiclassical approach, and benchmark it against the exact quantum evolution. The aim is to understand better and characterize how the quantum device approaches a solution of an otherwise difficult to solve NP-hard problem.

  15. Colour annealing - a toy model of colour reconnections

    Energy Technology Data Exchange (ETDEWEB)

    Sandhoff, Marisa; /Wuppertal U.; Skands, Peter; /Fermilab

    2005-12-01

    We present a simple toy model for colour reconnections at the nonperturbative level. The model resembles an annealing-type algorithm and is applicable to any collider and process type, though we argue for a possible enhancement of the effect in hadron-hadron collisions. We present a simple application and study of the consequences for semileptonic t{bar t} events at the Tevatron.

  16. Colour annealing - a toy model of colour reconnections

    International Nuclear Information System (INIS)

    Sandhoff, Marisa; Wuppertal U.; Skands, Peter; Fermilab

    2005-01-01

    We present a simple toy model for colour reconnections at the nonperturbative level. The model resembles an annealing-type algorithm and is applicable to any collider and process type, though we argue for a possible enhancement of the effect in hadron-hadron collisions. We present a simple application and study of the consequences for semileptonic t(bar t) events at the Tevatron

  17. Effects of annealing time on the structure, morphology, and stress of gold–chromium bilayer film

    International Nuclear Information System (INIS)

    Zhang Hong; Wang Hu; Huang Hao-Peng; Jin Yun-Xia; Kong Fang-Yu; Cui Yun

    2016-01-01

    In this work, a 200-nm-thick gold film with a 10-nm-thick chromium layer used as an adhesive layer is fabricated on fused silica by the electron beam evaporation method. The effects of annealing time at 300 °C on the structure, morphology and stress of the film are studied. We find that chromium could diffuse to the surface of the film by formatting a solid solution with gold during annealing. Meanwhile, chromium is oxidized on the surface and diffused downward along the grain grooves in the gold film. The various operant mechanisms that change the residual stresses of gold films for different annealing times are discussed. (paper)

  18. Open-System Quantum Annealing in Mean-Field Models with Exponential Degeneracy*

    Directory of Open Access Journals (Sweden)

    Kostyantyn Kechedzhi

    2016-05-01

    Full Text Available Real-life quantum computers are inevitably affected by intrinsic noise resulting in dissipative nonunitary dynamics realized by these devices. We consider an open-system quantum annealing algorithm optimized for such a realistic analog quantum device which takes advantage of noise-induced thermalization and relies on incoherent quantum tunneling at finite temperature. We theoretically analyze the performance of this algorithm considering a p-spin model that allows for a mean-field quasiclassical solution and, at the same time, demonstrates the first-order phase transition and exponential degeneracy of states, typical characteristics of spin glasses. We demonstrate that finite-temperature effects introduced by the noise are particularly important for the dynamics in the presence of the exponential degeneracy of metastable states. We determine the optimal regime of the open-system quantum annealing algorithm for this model and find that it can outperform simulated annealing in a range of parameters. Large-scale multiqubit quantum tunneling is instrumental for the quantum speedup in this model, which is possible because of the unusual nonmonotonous temperature dependence of the quantum-tunneling action in this model, where the most efficient transition rate corresponds to zero temperature. This model calculation is the first analytically tractable example where open-system quantum annealing algorithm outperforms simulated annealing, which can, in principle, be realized using an analog quantum computer.

  19. On crystallization of bisphenol-A polycarbonate thin films upon annealing

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chunhong; Li, Qichao; Mao, Wenfeng; Wang, Peng; He, Chunqing, E-mail: hecq@whu.edu.cn

    2015-10-16

    Crystallization of polycarbonate (PC) films as a function of annealing time has been investigated by various methods. A distinct diffraction peak at 17.56°, a sharp decrease of film thickness, an increase of refractive index and branch-type structures on the surface are found merely for the film after crystallization. Interestingly, positron annihilation parameters demonstrate fractional free-volumes in PC films vary significantly not only before crystallization but also at the early stage of annealing, which are not found by other methods. The results show that free-volumes in PC film must be increased remarkably before crystallization, which enables the occurrence of molecule rearrangement. - Highlights: • Fractional free-volume in PC film decreased of early stage of annealing. • Crystallization of PC film on Si substrate occurred after annealed for ∼48 hours. • Fractional free-volume in PC film increased remarkably before crystallization. • Positron diffusion length and S parameter revealed the variation of free volumes.

  20. On crystallization of bisphenol-A polycarbonate thin films upon annealing

    International Nuclear Information System (INIS)

    Yang, Chunhong; Li, Qichao; Mao, Wenfeng; Wang, Peng; He, Chunqing

    2015-01-01

    Crystallization of polycarbonate (PC) films as a function of annealing time has been investigated by various methods. A distinct diffraction peak at 17.56°, a sharp decrease of film thickness, an increase of refractive index and branch-type structures on the surface are found merely for the film after crystallization. Interestingly, positron annihilation parameters demonstrate fractional free-volumes in PC films vary significantly not only before crystallization but also at the early stage of annealing, which are not found by other methods. The results show that free-volumes in PC film must be increased remarkably before crystallization, which enables the occurrence of molecule rearrangement. - Highlights: • Fractional free-volume in PC film decreased of early stage of annealing. • Crystallization of PC film on Si substrate occurred after annealed for ∼48 hours. • Fractional free-volume in PC film increased remarkably before crystallization. • Positron diffusion length and S parameter revealed the variation of free volumes

  1. Adiabatic quantum computation and quantum annealing theory and practice

    CERN Document Server

    McGeoch, Catherine C

    2014-01-01

    Adiabatic quantum computation (AQC) is an alternative to the better-known gate model of quantum computation. The two models are polynomially equivalent, but otherwise quite dissimilar: one property that distinguishes AQC from the gate model is its analog nature. Quantum annealing (QA) describes a type of heuristic search algorithm that can be implemented to run in the ``native instruction set'''' of an AQC platform. D-Wave Systems Inc. manufactures {quantum annealing processor chips} that exploit quantum properties to realize QA computations in hardware. The chips form the centerpiece of a nov

  2. Generating solutions of Einstein's field equations by typing mistakes

    Energy Technology Data Exchange (ETDEWEB)

    Hoenselaers, C.; Skea, J.E.F.

    1989-01-01

    A solution to Einstein's field equations is presented that represents a Petrov type II electromagnetic null field with one Killing vector. This solution generalizes a vacuum solution previously discovered by Hoenselaers. The solution was found by the peculiar method of generalizing a member of this class inadvertently discovered by making a typing error when checking the vacuum solution with the computer algebra system SHEEP.

  3. Annealing of radiation-induced defects in vanadium and vanadium-titanium alloys

    International Nuclear Information System (INIS)

    Leguey, T.

    1996-01-01

    The annealing of defects induced by electron irradiation up to a dose of 6.10 21 m -2 at T<293 K has been investigated in single-crystals of pure vanadium and in vanadium-titanium alloys with compositions 0.3, 1 and 5 at.% Ti using positron annihilation spectroscopy. The recovery of the positron annihilation parameters in V single-crystals indicates that the defect annealing takes place in the temperature range 410-470 K without formation of microvoids for the present irradiation conditions. For the alloys the recovery onset is shifted to 460 K, the width of the annealing stage is gradually broadened with increasing Ti content, and microvoids are formed for annealing temperatures at the end of the recovery stage. The results show that the vacancy release from vacancy-interstitial impurity pairs and subsequent recombination with interstitial loops is the mechanism of the recovery in pure V. For V-Ti alloys, vacancy-Ti-interstitial impurity complexes and vacancy-Ti pairs appear to be the defects responsible for the positron trapping. The broadening of the recovery stage with increasing Ti content indicates that solute Ti is a very effective trap for vacancies in V. (orig.)

  4. Simulated Stochastic Approximation Annealing for Global Optimization With a Square-Root Cooling Schedule

    KAUST Repository

    Liang, Faming

    2014-04-03

    Simulated annealing has been widely used in the solution of optimization problems. As known by many researchers, the global optima cannot be guaranteed to be located by simulated annealing unless a logarithmic cooling schedule is used. However, the logarithmic cooling schedule is so slow that no one can afford to use this much CPU time. This article proposes a new stochastic optimization algorithm, the so-called simulated stochastic approximation annealing algorithm, which is a combination of simulated annealing and the stochastic approximation Monte Carlo algorithm. Under the framework of stochastic approximation, it is shown that the new algorithm can work with a cooling schedule in which the temperature can decrease much faster than in the logarithmic cooling schedule, for example, a square-root cooling schedule, while guaranteeing the global optima to be reached when the temperature tends to zero. The new algorithm has been tested on a few benchmark optimization problems, including feed-forward neural network training and protein-folding. The numerical results indicate that the new algorithm can significantly outperform simulated annealing and other competitors. Supplementary materials for this article are available online.

  5. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  6. Intelligent simulated annealing algorithm applied to the optimization of the main magnet for magnetic resonance imaging machine

    International Nuclear Information System (INIS)

    Sanchez Lopez, Hector

    2001-01-01

    This work describes an alternative algorithm of Simulated Annealing applied to the design of the main magnet for a Magnetic Resonance Imaging machine. The algorithm uses a probabilistic radial base neuronal network to classify the possible solutions, before the objective function evaluation. This procedure allows reducing up to 50% the number of iterations required by simulated annealing to achieve the global maximum, when compared with the SA algorithm. The algorithm was applied to design a 0.1050 Tesla four coil resistive magnet, which produces a magnetic field 2.13 times more uniform than the solution given by SA. (author)

  7. Quantum annealing for combinatorial clustering

    Science.gov (United States)

    Kumar, Vaibhaw; Bass, Gideon; Tomlin, Casey; Dulny, Joseph

    2018-02-01

    Clustering is a powerful machine learning technique that groups "similar" data points based on their characteristics. Many clustering algorithms work by approximating the minimization of an objective function, namely the sum of within-the-cluster distances between points. The straightforward approach involves examining all the possible assignments of points to each of the clusters. This approach guarantees the solution will be a global minimum; however, the number of possible assignments scales quickly with the number of data points and becomes computationally intractable even for very small datasets. In order to circumvent this issue, cost function minima are found using popular local search-based heuristic approaches such as k-means and hierarchical clustering. Due to their greedy nature, such techniques do not guarantee that a global minimum will be found and can lead to sub-optimal clustering assignments. Other classes of global search-based techniques, such as simulated annealing, tabu search, and genetic algorithms, may offer better quality results but can be too time-consuming to implement. In this work, we describe how quantum annealing can be used to carry out clustering. We map the clustering objective to a quadratic binary optimization problem and discuss two clustering algorithms which are then implemented on commercially available quantum annealing hardware, as well as on a purely classical solver "qbsolv." The first algorithm assigns N data points to K clusters, and the second one can be used to perform binary clustering in a hierarchical manner. We present our results in the form of benchmarks against well-known k-means clustering and discuss the advantages and disadvantages of the proposed techniques.

  8. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  9. The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC

    Science.gov (United States)

    Omotoso, E.; Auret, F. D.; Igumbor, E.; Tunhuma, S. M.; Danga, H. T.; Ngoepe, P. N. M.; Taleatu, B. A.; Meyer, W. E.

    2018-05-01

    The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current-voltage ( I- V), capacitance-voltage ( C- V), deep-level transient spectroscopy, scanning electron microscope (SEM) and X-ray diffraction measurements were employed to study the thermal effect on the characteristics of the SBDs. Prior to thermal annealing of Schottky contacts, the I- V measurements results confirmed the good rectification behaviour with ideality factor of 1.06, Schottky barrier height of 1.20 eV and series resistance of 7 Ω. The rectification properties after annealing was maintained up to an annealing temperature of 500 °C, but deviated slightly above 500 °C. The uncompensated ionized donor concentration decreased with annealing temperature, which could be attributed to out-diffusion of the 4 H-SiC into the Au/Ni contacts and decrease in bonding due to formation of nickel silicides. We observed the presence of four deep-level defects with energies 0.09, 0.11, 0.16 and 0.65 eV below the conduction band before and after the isochronal annealing up to 600 °C. The conclusion drawn was that annealing did not affect the number of deep-level defects present in Au/Ni/4 H-SiC contacts. The variations in electrical properties of the devices were attributed to the phase transformations and interfacial reactions that occurred after isochronal annealing.

  10. Effect of pre-annealing on NO32- centers in synthetic hydroxyapatite

    International Nuclear Information System (INIS)

    Nosenko, V.V.; Vorona, I.P.; Ishchenko, S.S.; Baran, N.P.; Zatovsky, I.V.; Gorodilova, N.A.; Povarchuk, V.Yu.

    2012-01-01

    Effect of pre-annealing of synthetic hydroxyapatite (HAP) on properties of γ- and UV- induced NO 3 2- centers was studied by electron paramagnetic resonance (EPR). Nitrate-containing hydroxyapatite powders ((N)HAP)) and the powders with an admixture of carbonate and nitrate ions ((C,N)HAP) were annealed in the temperature range T ann = 20 °C − 600 °C before irradiation. It was found that pre-annealing of (N)HAP samples changes the parameters of NO 3 2- centers while no changes took place in (C,N)HAP. Moreover, at the pre-annealing temperatures T ann > 200 °C two new NO 3 2- centers were observed in (N)HAP samples; they are characterized by larger value of A ⊥ (3.67 and 4.41 mT) as compared to the known centers. It was also found that the dependence of NO 3 2- centers amount on T ann is non-monotonous in both types of samples. Presumably this is caused by the escape of water molecules from HAP during the annealing and essential modification of the defect subsystem of HAP.

  11. Effect of heat treatment on pitting corrosion of austenitic Cr-Ni-Mo steels in sodium chloride solution

    International Nuclear Information System (INIS)

    Stefec, R.; Franz, F.; Holecek, A.

    1979-01-01

    The pitting corrosion resistance of Cr17Ni12Mo2,5 type steel under potentiostatic polarization in a sodium chloride solution is adversely affected by previous annealing. The data obtained were systematically dependent on annealing temperature, time and surface roughness. The corrosion current, the number of pits or the mean area of pit opening and the corrosion rate within the pits were increased by previous annealing at 550 to 750 0 C for 1-100 hrs. The highest corrosion rate estimated corresponded to heat treatments provoking severe sensitization to intergranular corrosion. The paercentage area of corrosion pit openings and the estimated pit penetration rates were several times higher for as-machined than for polished surfaces. It can be assumed that pitting corrosion is little affected by the carbon content and that molybdenum depletion of grain-boundary zones is responsible for the reduced pitting resistance of annealed steels. (orig./HP) [de

  12. Development of Annealing-Free, Solution-Processable Inverted Organic Solar Cells with N-Doped Graphene Electrodes using Zinc Oxide Nanoparticles.

    Science.gov (United States)

    Jung, Seungon; Lee, Junghyun; Seo, Jihyung; Kim, Ungsoo; Choi, Yunseong; Park, Hyesung

    2018-02-14

    An annealing-free process is considered as a technological advancement for the development of flexible (or wearable) organic electronic devices, which can prevent the distortion of substrates and damage to the active components of the device and simplify the overall fabrication process to increase the industrial applications. Owing to its outstanding electrical, optical, and mechanical properties, graphene is seen as a promising material that could act as a transparent conductive electrode for flexible optoelectronic devices. Owing to their high transparency and electron mobility, zinc oxide nanoparticles (ZnO-NP) are attractive and promising for their application as charge transporting materials for low-temperature processes in organic solar cells (OSCs), particularly because most charge transporting materials require annealing treatments at elevated temperatures. In this study, graphene/annealing-free ZnO-NP hybrid materials were developed for inverted OSC by successfully integrating ZnO-NP on the hydrophobic surface of graphene, thus aiming to enhance the applicability of graphene as a transparent electrode in flexible OSC systems. Chemical, optical, electrical, and morphological analyses of ZnO-NPs showed that the annealing-free process generates similar results to those provided by the conventional annealing process. The approach was effectively applied to graphene-based inverted OSCs with notable power conversion efficiencies of 8.16% and 7.41% on the solid and flexible substrates, respectively, which promises the great feasibility of graphene for emerging optoelectronic device applications.

  13. Growth of monodisperse nanocrystals of cerium oxide during synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Swapankumar, E-mail: swapankumar.ghosh2@mail.dcu.ie; Divya, Damodaran [National Institute for Interdisciplinary Science and Technology (NIIST), Council of Scientific and Industrial Research (CSIR) (India); Remani, Kottayilpadi C. [Sree Neelakanda Government Sanskrit College, Department of Chemistry (India); Sreeremya, Thadathil S. [National Institute for Interdisciplinary Science and Technology (NIIST), Council of Scientific and Industrial Research (CSIR) (India)

    2010-06-15

    Monodisperse cerium oxide nanocrystals have been successfully synthesised using simple ammonia precipitation technique from cerium(III) nitrate solution at different temperatures in the range 35-80 {sup o}C. The activation energy for growth of CeO{sub 2} nanocrystals during the precipitation is calculated as 11.54 kJ/mol using Arrhenius plot. Average crystal diameter was obtained from XRD analysis, HR-TEM and light scattering (PCS). The analysis of size data from HR-TEM images and PCS clearly indicated the formation of highly crystalline CeO{sub 2} particles in narrow size range. CeO{sub 2} nanocrystals precipitated at 35 {sup o}C were further annealed at temperatures in the range 300-700 {sup o}C. The activation energy for crystal growth during annealing is also calculated and is close to the reported values. An effort is made to predict the mechanism of crystal growth during the precipitation and annealing.

  14. Optimisation of electron beam characteristics by simulated annealing

    International Nuclear Information System (INIS)

    Ebert, M.A.; University of Adelaide, SA; Hoban, P.W.

    1996-01-01

    Full text: With the development of technology in the field of treatment beam delivery, the possibility of tailoring radiation beams (via manipulation of the beam's phase space) is foreseeable. This investigation involved evaluating a method for determining the characteristics of pure electron beams which provided dose distributions that best approximated desired distributions. The aim is to determine which degrees of freedom are advantageous and worth pursuing in a clinical setting. A simulated annealing routine was developed to determine optimum electron beam characteristics. A set of beam elements are defined at the surface of a homogeneous water equivalent phantom defining discrete positions and angles of incidence, and electron energies. The optimal weighting of these elements is determined by the (generally approximate) solution to the linear equation, Dw = d, where d represents the dose distribution calculated over the phantom, w the vector of (50 - 2x10 4 ) beam element relative weights, and D a normalised matrix of dose deposition kernels. In the iterative annealing procedure, beam elements are randomly selected and beam weighting distributions are sampled and used to perturb the selected elements. Perturbations are accepted or rejected according to standard simulated annealing criteria. The result (after the algorithm has terminated due to meeting an iteration or optimisation specification) is an approximate solution for the beam weight vector (w) specified by the above equation. This technique has been applied for several sample dose distributions and phase space restrictions. An example is given of the phase space obtained when endeavouring to conform to a rectangular 100% dose region with polyenergetic though normally incident electrons. For regular distributions, intuitive conclusions regarding the benefits of energy/angular manipulation may be made, whereas for complex distributions, variations in intensity over beam elements of varying energy and

  15. Synthesis of borides in molybdenum implanted by B+ ions under thermal and electron annealing

    International Nuclear Information System (INIS)

    Kazdaev, Kh.R.; Akchulakov, M.T.; Bayadilov, E.M.; Ehngel'ko, V.I.; Lazarenko, A.V.; Chebukov, E.S.

    1989-01-01

    The possibility of formation of borides in the near surface layers of monocrystalline molybdenum implanted by boron ions at 35 keV energy under thermal and pulsed electron annealing by an electon beam at 140 keV energy is investigated. It is found that implantation of boron ions into molybdenum with subsequent thermal annealing permits to produce both molybdenum monoboride (α-MoB) and boride (γ-Mo 2 B) with rather different formation mechanisms. Formation of the α-MoB phase occurs with the temperature elevation from the centers appeared during implantation, while the γ-Mo 2 B phase appears only on heating the implanted layers up to definite temperature as a result of the phase transformation of the solid solution into a chemical compound. Pulsed electron annealing instead of thermal annealing results mainly in formation of molybdenum boride (γ-Mo 2 B), the state of structure is determined by the degree of heating of implanted layers and their durable stay at temperatures exceeding the threshold values

  16. Crystallinity and mechanical effects from annealing Parylene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

    2016-03-31

    Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

  17. Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

    International Nuclear Information System (INIS)

    Gelczuk, Ł.; Kudrawiec, R.; Henini, M.

    2014-01-01

    Deep level traps in as-grown and annealed n-GaNAs layers (doped with Si) of various nitrogen concentrations (N = 0.2%, 0.4%, 0.8%, and 1.2%) were investigated by deep level transient spectroscopy. In addition, optical properties of GaNAs layers were studied by photoluminescence and contactless electroreflectance. The identification of N- and host-related traps has been performed on the basis of band gap diagram [Kudrawiec, Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of electron traps of the same microscopic nature decreases with the rise of nitrogen concentration in accordance with the N-related shift of the conduction band towards trap levels. The application of this diagram has allowed to investigate the evolution of donor traps in GaNAs upon annealing. In general, it was observed that the concentration of N- and host-related traps decreases after annealing and PL improves very significantly. However, it was also observed that some traps are generated due to annealing. It explains why the annealing conditions have to be carefully optimized for this material system.

  18. Kinetic Monte Carlo simulation of nanostructural evolution under post-irradiation annealing in dilute FeMnNi

    Energy Technology Data Exchange (ETDEWEB)

    Chiapetto, M. [SCK-CEN, Nuclear Materials Science Institute, Mol (Belgium); Unite Materiaux et Transformations (UMET), UMR 8207, Universite de Lille 1, ENSCL, Villeneuve d' Ascq (France); Becquart, C.S. [Unite Materiaux et Transformations (UMET), UMR 8207, Universite de Lille 1, ENSCL, Villeneuve d' Ascq (France); Laboratoire commun EDF-CNRS, Etude et Modelisation des Microstructures pour le Vieillissement des Materiaux (EM2VM) (France); Domain, C. [EDF R and D, Departement Materiaux et Mecanique des Composants, Les Renardieres, Moret sur Loing (France); Laboratoire commun EDF-CNRS, Etude et Modelisation des Microstructures pour le Vieillissement des Materiaux (EM2VM) (France); Malerba, L. [SCK-CEN, Nuclear Materials Science Institute, Mol (Belgium)

    2015-01-01

    Post-irradiation annealing experiments are often used to obtain clearer information on the nature of defects produced by irradiation. However, their interpretation is not always straightforward without the support of physical models. We apply here a physically-based set of parameters for object kinetic Monte Carlo (OKMC) simulations of the nanostructural evolution of FeMnNi alloys under irradiation to the simulation of their post-irradiation isochronal annealing, from 290 to 600 C. The model adopts a ''grey alloy'' scheme, i.e. the solute atoms are not introduced explicitly, only their effect on the properties of point-defect clusters is. Namely, it is assumed that both vacancy and SIA clusters are significantly slowed down by the solutes. The slowing down increases with size until the clusters become immobile. Specifically, the slowing down of SIA clusters by Mn and Ni can be justified in terms of the interaction between these atoms and crowdions in Fe. The results of the model compare quantitatively well with post-irradiation isochronal annealing experimental data, providing clear insight into the mechanisms that determine the disappearance or re-arrangement of defects as functions of annealing time and temperature. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Projection of the annealing behavior of irradiated Si sensors in the LHC environment

    CERN Document Server

    Chatterji, S; Bhardwaj, N; Chauhan, S S; Choudhary, B C; Gupta, P; Jha, M; Kumar, A; Naimuddin, M; Ranjan, K; Shivpuri, R K; Srivastava-Ajay, K

    2004-01-01

    The study of the radiation tolerance and subsequent annealing effects on p+-n-n+ silicon micro strip detectors has been performed as a part of R&D program for the preshower detector in the CMS experiment. CMS silicon strip sensors were irradiated with 24 GeV protons at CERN proton synchrotron (PS) to a total fluence of 3*10/sup 14/ p/cm/sup 2 /. Sensors were stored in freezer after irradiation and I-V and C-V measurements were carried out. Variation in full depletion voltage and leakage current have been studied as a function of annealing time. The breakdown performance of the device actually improves after irradiation due to the beneficial effect of type-inversion. The breakdown voltage increases further with annealing time. However, the leakage current increases tremendously just after irradiation. As the sensors are annealed, there is a drop in leakage current. The rate of annealing is observed to be temperature dependent. Hence in terms of leakage current, it seems that room temperature annealing is b...

  20. Calorimetric determination of inhibition of ice crystal growth by antifreeze protein in hydroxyethyl starch solutions.

    Science.gov (United States)

    Hansen, T N; Carpenter, J F

    1993-01-01

    Differential scanning calorimetry and cryomicroscopy were used to investigate the effects of type I antifreeze protein (AFP) from winter flounder on 58% solutions of hydroxyethyl starch. The glass, devitrification, and melt transitions noted during rewarming were unaffected by 100 micrograms/ml AFP. Isothermal annealing experiments were undertaken to detect the effects of AFP-induced inhibition of ice crystal growth using calorimetry. A premelt endothermic peak was detected during warming after the annealing procedure. Increasing the duration or the temperature of the annealing for the temperature range from -28 and -18 degrees C resulted in a gradual increase in the enthalpy of the premelt endotherm. This transition was unaffected by 100 micrograms/ml AFP. Annealing between -18 and -10 degrees C resulted in a gradual decrease in the premelt peak enthalpy. This process was inhibited by 100 micrograms/ml AFP. Cryomicroscopic examination of the samples revealed that AFP inhibited ice recrystallization during isothermal annealing at -10 degrees C. Annealing at lower temperatures resulted in minimal ice recrystallization and no visible effect of AFP. Thus, the 100 micrograms/ml AFP to have a detectable influence on thermal events in the calorimeter, conditions must be used that result in significant ice growth without AFP and visible inhibition of this process by AFP. Images FIGURE 8 PMID:7690257

  1. Computational algorithm for molybdenite concentrate annealing

    International Nuclear Information System (INIS)

    Alkatseva, V.M.

    1995-01-01

    Computational algorithm is presented for annealing of molybdenite concentrate with granulated return dust and that of granulated molybdenite concentrate. The algorithm differs from the known analogies for sulphide raw material annealing by including the calculation of return dust mass in stationary annealing; the latter quantity varies form the return dust mass value obtained in the first iteration step. Masses of solid products are determined by distribution of concentrate annealing products, including return dust and benthonite. The algorithm is applied to computations for annealing of other sulphide materials. 3 refs

  2. Annealing Effect on Corrosion Behavior of the Beta-Quenched HANA Alloy

    International Nuclear Information System (INIS)

    Kim, Hyun Gil; Kim, Il Hyun; Choi, Byung Kwan; Park, Sang Yoon; Park, Jeong Yong; Jeong, Yong Hwan

    2009-01-01

    The advanced fuel cladding materials named as HANA cladding have been developed at KAERI for application of high burn-up and that cladding showed an improved performance in both in-pile and out-of-pile conditions. However, the cladding performance could be changed by the annealing conditions during the tube manufacturing process. Especially, the corrosion resistance is considerably sensitive to their microstructure which is determined by a manufacturing process in the high Nb-containing zirconium alloys. They reported that the corrosion properties of the Nb-containing Zr alloys were considerably affected by the microstructure conditions such as the Nb concentration in the matrix and the second phase types. Therefore, the corrosion behavior of HANA cladding having the high Nb could be considerably affected by the annealing time and temperatures. The purpose of this study is focused on the annealing effect of the beta quenched HANA alloy to obtain the optimum annealing conditions

  3. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    Energy Technology Data Exchange (ETDEWEB)

    Tcherdyntsev, V.V., E-mail: vvch08@yandex.ru [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Aleev, A.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Churyukanova, M.N.; Kaloshkin, S.D. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Medvedeva, E.V. [Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg 620016 (Russian Federation); Korchuganova, O.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Zhukova, V. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); Zhukov, A.P. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2014-02-15

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon.

  4. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    International Nuclear Information System (INIS)

    Tcherdyntsev, V.V.; Aleev, A.A.; Churyukanova, M.N.; Kaloshkin, S.D.; Medvedeva, E.V.; Korchuganova, O.A.; Zhukova, V.; Zhukov, A.P.

    2014-01-01

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon

  5. Response to annealing and reirradiation of AISI 304L stainless steel following initial high-dose neutron irradiation in EBR-II

    International Nuclear Information System (INIS)

    Porter, D.L.; McVay, G.L.; Walters, L.C.

    1980-01-01

    The object of this study was to measure the stability of irradiation-induced microstructure upon annealing and, by selectively annealing out some of these features and reirradiating the material, it was expected that information could be gained concerning the role of microstructural changes in the void swelling process. Transmission electron microscopic examinations of isochronally annealed (200 to 1050 0 C) AISI 304L stainless steel, which had been irradiated at approximately 415 0 C to a fast (E > 0.1 MeV) neutron fluence of approximately 5.1 x 10 26 n/m 2 , verified that the two-stage hardness recovery with temperatures was related to a low temperature annealing of dislocation structures and a higher temperature annealing of voids and solute redistribution

  6. Instantons in Quantum Annealing: Thermally Assisted Tunneling Vs Quantum Monte Carlo Simulations

    Science.gov (United States)

    Jiang, Zhang; Smelyanskiy, Vadim N.; Boixo, Sergio; Isakov, Sergei V.; Neven, Hartmut; Mazzola, Guglielmo; Troyer, Matthias

    2015-01-01

    Recent numerical result (arXiv:1512.02206) from Google suggested that the D-Wave quantum annealer may have an asymptotic speed-up than simulated annealing, however, the asymptotic advantage disappears when it is compared to quantum Monte Carlo (a classical algorithm despite its name). We show analytically that the asymptotic scaling of quantum tunneling is exactly the same as the escape rate in quantum Monte Carlo for a class of problems. Thus, the Google result might be explained in our framework. We also found that the transition state in quantum Monte Carlo corresponds to the instanton solution in quantum tunneling problems, which is observed in numerical simulations.

  7. Vacancy-type defects and their annealing processes in ion-implanted Si studied by a variable-energy positron beam

    International Nuclear Information System (INIS)

    Uedono, A.; Wei, L.; Tanigawa, S.; Sugiura, J.; Ogasawara, M.

    1992-01-01

    Vacancy-type defects in B + -, P + - and Si + -ion implanted SiO 2 (43 nm)/Si(100) and Si(100) were studied by a variable-energy positron beam. Depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. For 200-keV P + -implanted specimen with a dose of 5 x 10 13 P/cm 2 , the damaged layers induced by ion-implantation were found to extend far beyond the stopping range of P-atoms. For 80-keV B + -implanted SiO 2 (43 nm)/Si(100) specimens with different ion-currents, an increase of the ion-current introduced a homogeneous amorphous layer in the subsurface region. Dominant defect species in B + - and P + -implanted specimen were identified as vacancy clusters from their annealing behavior. (author)

  8. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  9. Microstructure and magnetic behavior of Cu–Co–Si ternary alloy synthesized by mechanical alloying and isothermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Chabri, Sumit, E-mail: sumitchabri2006@gmail.com [Department of Metallurgy & Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India); Bera, S. [Department of Metallurgical & Materials Engineering, National Institute of Technology, Durgapur 713209 (India); Mondal, B.N. [Department of Central Scientific Services, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Basumallick, A.; Chattopadhyay, P.P. [Department of Metallurgy & Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India)

    2017-03-15

    Microstructure and magnetic behavior of nanocrystalline 50Cu–40Co–10Si (at%) alloy prepared by mechanical alloying and subsequent isothermal annealing in the temperature range of 450–650 °C have been studied. Phase evolution during mechanical alloying and isothermal annealing is characterized by X-ray diffraction (XRD), differential thermal analyzer (DTA), high resolution transmission electron microscopy (HRTEM) and magnetic measurement. Addition of Si has been found to facilitate the metastable alloying of Co in Cu resulting into the formation of single phase solid solution having average grain size of 9 nm after ball milling for 50 h duration. Annealing of the ball milled alloy improves the magnetic properties significantly and best combination of magnetic properties has been obtained after annealing at 550 °C for 1 h duration.

  10. Entire solutions of Fermat type q-difference differential equations

    Directory of Open Access Journals (Sweden)

    Kai Liu

    2013-02-01

    Full Text Available In this article, we describe the finite-order transcendental entire solutions of Fermat type $q$-difference and $q$-difference differential equations. In addition, we investigate the similarities and other properties among those solutions.

  11. The influence of ingot annealing on the corrosion resistance of a PrFeCoBNbP alloy

    International Nuclear Information System (INIS)

    Oliveira, M.C.L.; Takiishi, H.; Faria, R.N.; Costa, I.

    2008-01-01

    The influence of the annealing time on the corrosion resistance of a Pr-Fe-Co-B-Nb alloy with the addition of 0.1 wt% P was investigated here using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The cast ingot alloys were annealed at 1100 deg. C for 10, 15 and 20 h. The specimens were immersed for 30 days in naturally aerated 0.02 M Na 2 HPO 4 solution at room temperature, during which period the evolution of the electrochemical behavior was assessed using EIS. The results indicated that the corrosion resistance of the Pr 14 Fe bal Co 16 B 6 Nb 0.1 P 0.25 alloy was related to the annealing time and, hence, to its microstructure. Annealing at 1100 deg. C for 10 h was insufficient to eliminate the Fe-α phase from the alloy microstructure, whereas annealing for 15 and 20 h removed an increasing amount of Fe-α phase, thereby increasing the alloy's corrosion resistance

  12. Chromium depletion from stainless steels during vacuum annealing

    International Nuclear Information System (INIS)

    Smith, A.F.; Hales, R.

    1977-01-01

    During selective chromium oxidation of stainless steels the changes in chromium concentration at the metal surface and in the metal have an important bearing on the overall oxidation performance. It has been proposed that an analogue of chromium behaviour during selective oxidation is obtained from volatilisation of chromium during high temperature vacuum annealing. In the present report the evaporation of chromium from 316 type of steel, vacuum annealed at 1,000 0 C, has been investigated by means of energy dispersive X-ray analysis and by neutron activation analysis. It was established that chromium loss from austenitic stainless steels is rate controlled by interdiffusion in the alloy. As predicted the chromium concentration at the metal surface decreased with increasing vacuum annealing time. The chromium depletion profile in the metal was in good agreement with the previously derived model apart from an anomalous region near the surface. Here the higher resolution of the neutron activation technique indicated a zone within approximately 2μm of the surface where the chromium concentration decreased more steeply than expected. (orig.) [de

  13. Discrete-State Simulated Annealing For Traveling-Wave Tube Slow-Wave Circuit Optimization

    Science.gov (United States)

    Wilson, Jeffrey D.; Bulson, Brian A.; Kory, Carol L.; Williams, W. Dan (Technical Monitor)

    2001-01-01

    Algorithms based on the global optimization technique of simulated annealing (SA) have proven useful in designing traveling-wave tube (TWT) slow-wave circuits for high RF power efficiency. The characteristic of SA that enables it to determine a globally optimized solution is its ability to accept non-improving moves in a controlled manner. In the initial stages of the optimization, the algorithm moves freely through configuration space, accepting most of the proposed designs. This freedom of movement allows non-intuitive designs to be explored rather than restricting the optimization to local improvement upon the initial configuration. As the optimization proceeds, the rate of acceptance of non-improving moves is gradually reduced until the algorithm converges to the optimized solution. The rate at which the freedom of movement is decreased is known as the annealing or cooling schedule of the SA algorithm. The main disadvantage of SA is that there is not a rigorous theoretical foundation for determining the parameters of the cooling schedule. The choice of these parameters is highly problem dependent and the designer needs to experiment in order to determine values that will provide a good optimization in a reasonable amount of computational time. This experimentation can absorb a large amount of time especially when the algorithm is being applied to a new type of design. In order to eliminate this disadvantage, a variation of SA known as discrete-state simulated annealing (DSSA), was recently developed. DSSA provides the theoretical foundation for a generic cooling schedule which is problem independent, Results of similar quality to SA can be obtained, but without the extra computational time required to tune the cooling parameters. Two algorithm variations based on DSSA were developed and programmed into a Microsoft Excel spreadsheet graphical user interface (GUI) to the two-dimensional nonlinear multisignal helix traveling-wave amplifier analysis program TWA3

  14. Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kusworo, T. D., E-mail: tdkusworo@che.undip.ac.id; Aryanti, N., E-mail: nita.aryanti@gmail.com; Firdaus, M. M. H.; Sukmawati, H. [Chemical Engineering, Faculty of Engineering, Diponegoro University Prof. Soedarto Street, Tembalang, Semarang, 50239, Phone/Fax : (024)7460058 (Indonesia)

    2015-12-29

    This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second.

  15. Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

    International Nuclear Information System (INIS)

    Kusworo, T. D.; Aryanti, N.; Firdaus, M. M. H.; Sukmawati, H.

    2015-01-01

    This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second

  16. Management of the Bohunice RPVs annealing procedures

    International Nuclear Information System (INIS)

    Repka, M.

    1994-01-01

    The program of annealing regeneration procedure of RPVs units 1 and 2 of NPP V-1 (EBO) realization in the year 1993, is the topic of this paper. In the paper the following steps are described in detail: the preparation works, the annealing procedure realization schedule and safety management: starting with zero conditions, assembling of annealing apparatus, annealing procedure, cooling down and disassembling procedure of annealing apparatus. At the end the programs of annealing of both RPVs including the dosimetry measurements are discussed and evaluated. (author). 3 figs

  17. The fracture mechanical significance of cracks formed during stress-relief annealing of a submerged arc weldment in pressure vessel steel of type A508 class 2

    International Nuclear Information System (INIS)

    Liljestrand, L.-G.; Oestberg, G.

    1978-01-01

    In large weldments of type A508 C12 cracks can form in the heat-affected zone during stress-relief annealing. The significance of such cracks with respect to catastrophic fracture is of interest from the point of view of safety, in particular for nuclear pressure vessels. In this investigation the size of reheat cracks, as formed and after fatigue growth, has been compared with the critical size for fast fracture. The latter was assessed by determination of the toughness of the heat-affected zones. The fracture toughness of the heat-affected zones did not differ much from that of the parent material. The presence of microcracks reduced the fracture toughness (of a special type of simulated specimen) at 20 0 C by about 20%. The fracture mechanical evaluation indicates that the cracks formed during stress-relief annealing should not impair the safety of the vessel under normal conditions, except for particular geometries and when the cracks may rapidly link together during fatigue. (author)

  18. Solutions to variational inequalities of parabolic type

    Science.gov (United States)

    Zhu, Yuanguo

    2006-09-01

    The existence of strong solutions to a kind of variational inequality of parabolic type is investigated by the theory of semigroups of linear operators. As an application, an abstract semi permeable media problem is studied.

  19. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

    International Nuclear Information System (INIS)

    Tang Longjuan; Zhu Yinfang; Yang Jinling; Li Yan; Zhou Wei; Xie Jing; Liu Yunfei; Yang Fuhua

    2009-01-01

    The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN x :H by HF solution. A low etch rate was achieved by increasing the SiH 4 gas flow rate or annealing temperature, or decreasing the NH 3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO 2 and SiN x :H. A high etching selectivity of SiO 2 over SiN x :H was obtained using highly concentrated buffered HF.

  20. Combined Effect of Heating Rate and Microalloying Elements on Recrystallization During Annealing of Dual-Phase Steels

    Science.gov (United States)

    Bellavoine, Marion; Dumont, Myriam; Drillet, Josée; Hébert, Véronique; Maugis, Philippe

    2018-05-01

    Adjusting ferrite recrystallization kinetics during annealing is a way to control the final microstructure and thus the mechanical properties of advanced cold-rolled high-strength steels. Two strategies are commonly used for this purpose: adjusting heating rates and/or adding microalloying elements. The present work investigates the effect of heating rate and microalloying elements Ti, Nb, and Mo on recrystallization kinetics during annealing in various cold-rolled Dual-Phase steel grades. The use of combined experimental and modeling approaches allows a deeper understanding of the separate influence of heating rate and the addition of microalloying elements. The comparative effect of Ti, Nb, and Mo as solute elements and as precipitates on ferrite recrystallization is also clarified. It is shown that solute drag has the largest delaying effect on recrystallization in the present case and that the order of solute drag effectiveness of microalloying elements is Nb > Mo > Ti.

  1. The Effect of Annealing Temperature on Nickel on Reduced Graphene Oxide Catalysts on Urea Electrooxidation

    International Nuclear Information System (INIS)

    Glass, Dean E.; Galvan, Vicente; Prakash, G.K. Surya

    2017-01-01

    Highlights: •Nickel was reduced on graphene oxide and annealed under argon from 300 to 700 °C. •Nickel was oxidized from the removal of oxygen groups on the graphene oxide. •Higher annealed catalysts displayed decreased urea electrooxidation currents. •Micro direct urea/hydrogen peroxide fuel cells were employed for the first time. •Ni/rGO catalysts displayed enhanced fuel cell performance than the bare nickel. -- Abstract: The annealing temperature effects on nickel on reduced graphene oxide (Ni/rGO) catalysts for urea electrooxidation were investigated. Nickel chloride was directly reduced in an aqueous solution of graphene oxide (GO) followed by annealing under argon at 300, 400, 500, 600, and 700 °C, respectively. X-ray Diffraction (XRD) patterns revealed an increase in the crystallite size of the nickel nanoparticles while the Raman spectra displayed an increase in the graphitic disorder of the reduced graphene oxide at higher annealing temperatures due to the removal of oxygen functional groups. The Ni/rGO catalysts annealed at higher temperatures displayed oxidized nickel surface characteristics from the Ni 2p X-ray Photoelectron Spectra (XPS) due to the oxidation of the nickel from the oxygen functional groups in the graphitic lattice. In the half-cell testing, the onset potential of urea electrooxidation decreased while the urea electrooxidation currents decreased as the annealing temperature was increased. The nickel catalyst annealed at 700 °C displayed a 31% decrease in peak power density while the catalyst annealed at 300 °C displayed a 13% increase compared with the unannealed Ni/rGO catalyst in the micro direct urea/hydrogen peroxide fuel cells tests.

  2. Placement by thermodynamic simulated annealing

    International Nuclear Information System (INIS)

    Vicente, Juan de; Lanchares, Juan; Hermida, Roman

    2003-01-01

    Combinatorial optimization problems arise in different fields of science and engineering. There exist some general techniques coping with these problems such as simulated annealing (SA). In spite of SA success, it usually requires costly experimental studies in fine tuning the most suitable annealing schedule. In this Letter, the classical integrated circuit placement problem is faced by Thermodynamic Simulated Annealing (TSA). TSA provides a new annealing schedule derived from thermodynamic laws. Unlike SA, temperature in TSA is free to evolve and its value is continuously updated from the variation of state functions as the internal energy and entropy. Thereby, TSA achieves the high quality results of SA while providing interesting adaptive features

  3. Modernizing quantum annealing using local searches

    International Nuclear Information System (INIS)

    Chancellor, Nicholas

    2017-01-01

    I describe how real quantum annealers may be used to perform local (in state space) searches around specified states, rather than the global searches traditionally implemented in the quantum annealing algorithm (QAA). Such protocols will have numerous advantages over simple quantum annealing. By using such searches the effect of problem mis-specification can be reduced, as only energy differences between the searched states will be relevant. The QAA is an analogue of simulated annealing, a classical numerical technique which has now been superseded. Hence, I explore two strategies to use an annealer in a way which takes advantage of modern classical optimization algorithms. Specifically, I show how sequential calls to quantum annealers can be used to construct analogues of population annealing and parallel tempering which use quantum searches as subroutines. The techniques given here can be applied not only to optimization, but also to sampling. I examine the feasibility of these protocols on real devices and note that implementing such protocols should require minimal if any change to the current design of the flux qubit-based annealers by D-Wave Systems Inc. I further provide proof-of-principle numerical experiments based on quantum Monte Carlo that demonstrate simple examples of the discussed techniques. (paper)

  4. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  5. Ensemble annealing of complex physical systems

    OpenAIRE

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

  6. Soliton-type solutions for two models in mathematical physics

    Science.gov (United States)

    Al-Ghafri, K. S.

    2018-04-01

    In this paper, the generalised Klein-Gordon and Kadomtsov-Petviashvili Benjamin-Bona-Mahony equations with power law nonlinearity are investigated. Our study is based on reducing the form of both equations to a first-order ordinary differential equation having the travelling wave solutions. Subsequently, soliton-type solutions such as compacton and solitary pattern solutions are obtained analytically. Additionally, the peaked soliton has been derived where it exists under a specific restrictions. In addition to the soliton solutions, the mathematical method which is exploited in this work also creates a few amount of travelling wave solutions.

  7. Investigation of irradiation embrittlement and annealing behaviour of JRQ pressure vessel steel by instrumented impact tests

    Energy Technology Data Exchange (ETDEWEB)

    Valo, M; Rintamaa, R; Nevalainen, M; Wallin, K; Torronen, K [Technical Research Centre of Finland, Espoo (Finland); Tipping, P [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1994-12-31

    Seven series of A533-B type pressure vessel steel specimens irradiated as well as irradiated - annealed - re-irradiated to different fast neutron fluences (up to 5.10{sup 19}/cm{sup 2}) have been tested with a new type of instrumented impact test machine. The radiation embrittlement and the effect of the intermediate annealing was assessed by using the ductile and cleavage fracture initiation toughness. Although the ductile fracture initiation toughness exhibited scatter, the transition temperature shift corresponding to the dynamic cleavage fracture initiation agreed well with the 41 J Charpy-V shift. The results indicate that annealing is beneficial in restoring mechanical properties in an irradiated nuclear pressure vessel steel. (authors). 8 refs., 11 figs., 1 tab.

  8. Exact solutions to sine-Gordon-type equations

    International Nuclear Information System (INIS)

    Liu Shikuo; Fu Zuntao; Liu Shida

    2006-01-01

    In this Letter, sine-Gordon-type equations, including single sine-Gordon equation, double sine-Gordon equation and triple sine-Gordon equation, are systematically solved by Jacobi elliptic function expansion method. It is shown that different transformations for these three sine-Gordon-type equations play different roles in obtaining exact solutions, some transformations may not work for a specific sine-Gordon equation, while work for other sine-Gordon equations

  9. Robertson-Walker solutions for various types of energy-momentum tensor

    International Nuclear Information System (INIS)

    Lukacs, B.

    1976-01-01

    Robertson-Walker solutions are important in general relativity as universe solutions. This paper contains a number of Robertson-Walker-type solutions for certain cases, namely, for noncharged massless scalar meson fields, viscous fluids, Hookean elastic mediums, and Kelvin-Voigt viscoelastic systems. (author)

  10. Crystallization of Trehalose in Frozen Solutions and its Phase Behavior during Drying

    Energy Technology Data Exchange (ETDEWEB)

    Sundaramurthi, Prakash; Patapoff, Thomas W.; Suryanarayanan, Raj (Genentech); (UMM)

    2015-02-19

    To study the crystallization of trehalose in frozen solutions and to understand the phase transitions during the entire freeze-drying cycle. Aqueous trehalose solution was cooled to -40 C in a custom-designed sample holder. The frozen solution was warmed to -18 C and annealed, and then dried in the sample chamber of the diffractometer. XRD patterns were continuously collected during cooling, annealing and drying. After cooling, hexagonal ice was the only crystalline phase observed. However, upon annealing, crystallization of trehalose dihydrate was evident. Seeding the frozen solution accelerated the solute crystallization. Thus, phase separation of the lyoprotectant was observed in frozen solutions. During drying, dehydration of trehalose dihydrate yielded a substantially amorphous anhydrous trehalose. Crystallization of trehalose, as trehalose dihydrate, was observed in frozen solutions. The dehydration of the crystalline trehalose dihydrate to substantially amorphous anhydrate occurred during drying. Therefore, analyzing the final lyophile will not reveal crystallization of the lyoprotectant during freeze-drying. The lyoprotectant crystallization can only become evident by continuous monitoring of the system during the entire freeze-drying cycle. In light of the phase separation of trehalose in frozen solutions, its ability to serve as a lyoprotectant warrants further investigation.

  11. Electrochemical Behavior of Pure Copper in Phosphate Buffer Solutions: A Comparison Between Micro- and Nano-Grained Copper

    Science.gov (United States)

    Imantalab, O.; Fattah-alhosseini, A.; Keshavarz, M. K.; Mazaheri, Y.

    2016-02-01

    In this work, electrochemical behavior of annealed (micro-) and nano-grained pure copper (fabricated by accumulative roll bonding process) in phosphate buffer solutions of various pH values ranging from 10.69 to 12.59 has been studied. Before any electrochemical measurements, evaluation of microstructure was obtained by optical microscope and transmission electron microscopy. To investigate the electrochemical behavior of the samples, the potentiodynamic polarization, Mott-Schottky analysis, and electrochemical impedance spectroscopy (EIS) were carried out. Potentiodynamic polarization plots and EIS measurements revealed that as a result of grain refinement, the passive behavior of the nano-grained sample was improved compared to that of annealed pure copper. Also, Mott-Schottky analysis indicated that the passive films behaved as p-type semiconductors and grain refinement did not change the semiconductor type of passive films.

  12. Annealing behavior and selected applications of ion-implanted alloys

    International Nuclear Information System (INIS)

    Myers, S.M.

    Thermally activated processes cause ion-implanted metals to evolve from the initial state toward thermodynamic equilibrium. The degree of equilibration is strongly dependent upon temperature and is considered for three temperature regimes which are distinguished by the varying mobilities of interstitial and substitutional atoms. In addition, perturbations resulting from the irradiation environment are discussed. Examples are given of the use of implanted and annealed alloys in studies of diffusion, phase diagrams, and solute trapping

  13. Effects of solutes on damage production and recovery in zirconium

    International Nuclear Information System (INIS)

    Zee, R.H.; Birtcher, R.C.; MacEwen, S.R.; Abromeit, C.

    1986-04-01

    Dilute zirconium-based alloys and pure zirconium were irradiated at 10 K with spallation neutrons at IPNS. Four types of alloys - Zr-Ti, Zr-Sn, Zr-Dy and Zr-Au - each with three concentration levels, were used. Low-temperature resistivity damage rates are enhanced by the presence of any of the four solutes. The greatest enhancement was produced by Au while the least by Dy. Within each alloy group, damage production also increased but at a decreasing rate, with increasing concentration. Post-irradiation annealing experiments, up to 400 K, showed that all four solutes suppress recovery due to interstitial migration, indicative of interstitial trapping by the solutes. Vacancy recovery is also suppressed by the presence of Sn, Dy or Au. The effect of Ti is to shift this stage to lower temperature. No clear correlation between the results with solute size was detected

  14. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    International Nuclear Information System (INIS)

    Burke, M.G.; Freyer, P.D.; Mager, T.R.

    1993-01-01

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ''precipitation-type'' and a ''damage-type'' component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs

  15. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Burke, M G; Freyer, P D; Mager, T R

    1994-12-31

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ``precipitation-type`` and a ``damage-type`` component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs.

  16. Acid Solutions for Etching Corrosion-Resistant Metals

    Science.gov (United States)

    Simmons, J. R.

    1982-01-01

    New study characterized solutions for etching austenitic stainless steels, nickel-base alloys, and titanium alloys (annealed). Solutions recommended for use remove at least 0.4 mil of metal from surface in less than an hour. Solutions do not cause intergranular attack on metals for which they are effective, when used under specified conditions.

  17. Electrically-inactive phosphorus re-distribution during low temperature annealing

    Science.gov (United States)

    Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

    2018-04-01

    An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

  18. Annealing effects in solid-state track recorders

    International Nuclear Information System (INIS)

    Gold, R.; Roberts, J.H.; Ruddy, F.H.

    1981-01-01

    Current analyses of the annealing process in Solid State Track Recorders (SSTR) reveal fundamental misconceptions. The use of the Arrhenius equation to describe the decrease in track density resulting from annealing is shown to be incorrect. To overcome these deficiencies, generalized reaction rate theory is used to describe the annealing process in SSTR. Results of annealing experiments are used to guide this theoretical formulation. Within this framework, the concept of energy per etchable defect for SSTR is introduced. A general correlation between sensitivity and annealing susceptibility in SSTR is deduced. In terms of this general theory, the apparent correlation between fission track size and fission track density observed under annealing is readily explained. Based on this theoretical treatment of annealing phenomena, qualitative explanations are advanced for current enigmas in SSTR cosmic ray work

  19. P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2018-02-01

    Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130 keV Na and 90 keV N ions at 460 °C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24 × 1016-1.34 × 1017 cm-3, hole mobilities between 0.65 and 8.37 cm2 V-1 s-1, and resistivities in the range of 53.3-80.7 Ω cm by Hall-effect measurements. There are no other secondary phase appearing, with (0 0 2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.

  20. Grafted polymers with annealed excluded volume : a model for surfactant association in brushes

    NARCIS (Netherlands)

    Currie, E.P.K.; Fleer, G.J.; Cohen Stuart, M.A.; Borisov, O.V.

    2000-01-01

    We present an analytical self-consistent-field (SCF) theory for a neutral polymer brush (a layer of long polymer chains end-grafted to a surface) with annealed excluded volume interactions between the monomer units. This model mimics the reversible adsorption of solute molecules or aggregates, such

  1. Iterative Solutions of Nonlinear Integral Equations of Hammerstein Type

    Directory of Open Access Journals (Sweden)

    Abebe R. Tufa

    2015-11-01

    Full Text Available Let H be a real Hilbert space. Let F,K : H → H be Lipschitz monotone mappings with Lipschtiz constants L1and L2, respectively. Suppose that the Hammerstein type equation u + KFu = 0 has a solution in H. It is our purpose in this paper to construct a new explicit iterative sequence and prove strong convergence of the sequence to a solution of the generalized Hammerstein type equation. The results obtained in this paper improve and extend known results in the literature.

  2. Characterizations of MoTiO5 flash memory devices with post-annealing

    International Nuclear Information System (INIS)

    Kao, Chyuan Haur; Chen, Hsiang; Chen, Su Zhien; Chen, Yu Jie; Chu, Yu Cheng

    2014-01-01

    In this study, high-K MoTiO 5 dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO 5 -oxide-Si-type memory devices. Among the applied MoTiO 5 trapping layer treatment conditions, annealing at 900 °C yielded devices that exhibited superior memory performance, such as a larger memory window and faster programming/erasing speed. Multiple material analyses, namely X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, confirmed that annealing at 900 °C can improve the material quality as a result of crystallization. The fabricated MoTiO 5 -based memory devices show potential for future commercial memory device applications. - Highlights: • MoTiO5-based flash memories have been fabricated. • MoTiO5 trapping layers could be formed by co-sputtering. • MoTiO5 layers with annealing exhibited a good memory performance. • Multiple material analyses confirm that annealing enhanced crystallization

  3. Structural and phase changes in copper-fullerene films by ion implantation and annealing

    International Nuclear Information System (INIS)

    Shpilevsky, E.M.; Baran, L.V.; Okatova, G.P.; Jakimovich, A.V.

    2001-01-01

    The structural and phase changes and the electrical properties of copper - fullerene (Cu-C 60 ) films by the ion implantation(B + , E=80 keV, D 5·10 21 m -2 ) and the thermal annealing are described. We found the copper-fullerene solid supersaturated solution formed in process of the two-component films obtaining. The result of the thermal annealing is the phase segregation of fullerene. It has been established the ion implantation adduces to the partial fragmentation of fullerene, to the destruction of the C 60 molecules and to the formation of the CuB 24 , B 25 C and B 4 C phases

  4. A solution to the economic dispatch using EP based SA algorithm on large scale power system

    Energy Technology Data Exchange (ETDEWEB)

    Christober Asir Rajan, C. [Department of EEE, Pondicherry Engineering College, Pondicherry 605 014 (India)

    2010-07-15

    This paper develops a new approach for solving the Economic Load Dispatch (ELD) using an integrated algorithm based on Evolutionary Programming (EP) and Simulated Annealing (SA) on large scale power system. Classical methods employed for solving Economic Load Dispatch are calculus-based. For generator units having quadratic fuel cost functions, the classical techniques ignore or flatten out the portions of the incremental fuel cost curves and so may be have difficulties in the determination of the global optimum solution for non-differentiable fuel cost functions. To overcome these problems, the intelligent techniques, namely, Evolutionary Programming and Simulated Annealing are employed. The above said optimization techniques are capable of determining the global or near global optimum dispatch solutions. The validity and effectiveness of the proposed integrated algorithm has been tested with 66-bus Indian utility system, IEEE 5-bus, 30-bus, 118-bus system. And the test results are compared with the results obtained from other methods. Numerical results show that the proposed integrated algorithm can provide accurate solutions within reasonable time for any type of fuel cost functions. (author)

  5. Influence of Annealing on Microstructure and Mechanical Properties of Refractory CoCrMoNbTi0.4 High-Entropy Alloy

    Science.gov (United States)

    Zhang, Mina; Zhou, Xianglin; Zhu, Wuzhi; Li, Jinghao

    2018-04-01

    A novel refractory CoCrMoNbTi0.4 high-entropy alloy (HEA) was prepared via vacuum arc melting. After annealing treatment at different temperatures, the microstructure evolution, phase stability, and mechanical properties of the alloy were investigated. The alloy was composed of two primary body-centered cubic structures (BCC1 and BCC2) and a small amount of (Co, Cr)2Nb-type Laves phase under different annealing conditions. The microhardness and compressive strength of the heat-treated alloy was significantly enhanced by the solid-solution strengthening of the BCC phase matrix and newborn Laves phase. Especially, the alloy annealed at 1473 K (1200 °C) achieved the maximum hardness and compressive strength values of 959 ± 2 HV0.5 and 1790 MPa, respectively, owing to the enhanced volume fraction of the dispersed Laves phase. In particular, the HEAs exhibited promising high-temperature mechanical performance, when heated to an elevated temperature of 1473 K (1200 °C), with a compressive fracture strength higher than 580 MPa without fracture at a strain of more than 20 pct. This study suggests that the present refractory HEAs have immense potential for engineering applications as a new class of high-temperature structural materials.

  6. Understanding the microwave annealing of silicon

    Directory of Open Access Journals (Sweden)

    Chaochao Fu

    2017-03-01

    Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

  7. Improved interface properties of atomic-layer-deposited HfO{sub 2} film on InP using interface sulfur passivation with H{sub 2}S pre-deposition annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hyun Soo [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin [Inorganic Material Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Sang-Moon [Process Development Team, Semiconductor R& D Center, Samsung Electronics Co. Ltd, Hwasung 445-701 (Korea, Republic of); Park, Jong-Bong; Yun, Dong-Jin [Analytical Engineering Group, Platform Technology Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

    2015-12-01

    Highlights: • ALD HfO{sub 2} films were grown on InP for III–V compound-semiconductor-based devices. • S passivation was performed with (NH{sub 4}){sub 2}S solution and annealing under a H{sub 2}S atmosphere. • The H{sub 2}S annealing provided similar S profiles at the interface without surface damage. • The H{sub 2}S annealing was more effective to suppress interface state density due to thermal energy. - Abstract: Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H{sub 2}S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO{sub 2} film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH{sub 4}){sub 2}S solution treatment. The H{sub 2}S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH{sub 4}){sub 2}S solution treatment, although S profiles at the interface of HfO{sub 2}/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H{sub 2}S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H{sub 2}S annealing.

  8. Annealing Studies of irradiated p-type Sensors Designed for the Upgrade of ATLAS Phase-II Strip Tracker

    CERN Document Server

    Wiik-Fuchs, Liv Antje Mari; The ATLAS collaboration

    2018-01-01

    The upgrade for the High Luminosity LHC in 2025 will challenge the silicon strip detector performance with high fluence and long operation time. Sensors have been designed and tests on charge collection and electrical performance have been carried out in order to evaluate their behaviour. Besides that, it is important to understand and predict the long-term evolution of the sensor prop- erties. In this work, detailed studies on the annealing behaviour of ATLAS12 strip sensors designed by the ITK Strip Sensor Working Group and irradiated from 5 × 1013 neqcm−2 to 2 × 1015 neqcm−2 are presented. Systematic charge collection, leakage current and impedance measurements have been carried out during the annealing time at 23 and 60◦C until break-down or the appearance of charge multiplication. Sensors showing charge multiplication have been then kept at high voltage for a long time in order to monitor their stability. The difference in the annealing behaviour between the two temperatures has been analysed and...

  9. Annealing studies of irradiated p-type sensors designed for the upgrade of ATLAS Phase-II Strip Tracker

    CERN Document Server

    Wiik-Fuchs, Liv Antje Mari; The ATLAS collaboration

    2018-01-01

    The upgrade for the High Luminosity LHC in 2025 will challenge the silicon strip detector performance with high fluence and long operation time. Sensors have been designed and tests on charge collection and electrical performance have been carried out in order to evaluate their behavior. Besides that, it is important to understand and predict the long-term evolution of the sensor properties. In this work, we present detailed studies on the annealing behavior of ATLAS12 strip sensors designed by the ITK Strip Sensor Working Group and irradiated from 510^13 to 210^15 n_eq/cm^2. Systematic charge collection, leakage current and impedance measurements have been carried out during the annealing time at 23 and 60°C until break-down or the appearance of charge multiplication. Sensors showing charge multiplication have been then kept at high voltage for a long time in order to monitor their stability. The difference in the annealing behavior between the two temperatures has been analyzed. From the impedance measurem...

  10. Loviisa Unit One: Annealing - healing

    Energy Technology Data Exchange (ETDEWEB)

    Kohopaeae, J.; Virsu, R. [ed.; Henriksson, A. [ed.

    1997-11-01

    Unit 1 of the Loviisa nuclear powerplant was annealed in connection with the refuelling outage in the summer of 1996. This type of heat treatment restored the toughness properties of the pressure vessel weld, which had been embrittled be neutron radiation, so that it is almost equivalent to a new weld. The treatment itself was an ordinary metallurgical procedure that took only a few days. But the material studies that preceded it began over fifteen years ago and have put IVO at the forefront of world-wide expertise in the area of radiation embrittlement

  11. Optimization of Multiple Traveling Salesman Problem Based on Simulated Annealing Genetic Algorithm

    Directory of Open Access Journals (Sweden)

    Xu Mingji

    2017-01-01

    Full Text Available It is very effective to solve the multi variable optimization problem by using hierarchical genetic algorithm. This thesis analyzes both advantages and disadvantages of hierarchical genetic algorithm and puts forward an improved simulated annealing genetic algorithm. The new algorithm is applied to solve the multiple traveling salesman problem, which can improve the performance of the solution. First, it improves the design of chromosomes hierarchical structure in terms of redundant hierarchical algorithm, and it suggests a suffix design of chromosomes; Second, concerning to some premature problems of genetic algorithm, it proposes a self-identify crossover operator and mutation; Third, when it comes to the problem of weak ability of local search of genetic algorithm, it stretches the fitness by mixing genetic algorithm with simulated annealing algorithm. Forth, it emulates the problems of N traveling salesmen and M cities so as to verify its feasibility. The simulation and calculation shows that this improved algorithm can be quickly converged to a best global solution, which means the algorithm is encouraging in practical uses.

  12. Crystallinity and properties of C60 nanotubes improved by annealing and alcohol-soaking

    Science.gov (United States)

    Naito, K.; Matsuishi, K.

    2009-04-01

    Well-uniformed C60 nanotubes were grown at -20 °C with irradiation of red light using C60-saturated pyridine solution and isopropyl alcohol by a liquid-liquid interfacial precipitation method without ultrasonic pulverization. We attempted to improve their crystallinity by two post-treatments; thermal annealing and alcohol-soaking. The crystallinity of as-grown and dried C60 nanotubes, which was poor due to the evaporation of solvent molecules from crystals in the drying process, was improved by annealing around 220 °C for 5 hours in vacuum. Dramatic improvement of crystallinity of as-grown samples was achieved by soaking into methanol and then drying in air. Raman, infrared and X-ray diffraction results suggest that the methanol-soaked samples exhibit a solvated tetragonal structure. The crystallinity improved by methanol-soaking did not degrade after removal of methanol molecules from samples by thermal annealing. Photo-polymerization of the structurally-improved C60 nanotubes was examined to investigate an effect of crystallinity on the polymerization kinetics.

  13. Crystallinity and properties of C60 nanotubes improved by annealing and alcohol-soaking

    International Nuclear Information System (INIS)

    Naito, K; Matsuishi, K

    2009-01-01

    Well-uniformed C 60 nanotubes were grown at -20 deg. C with irradiation of red light using C 60 -saturated pyridine solution and isopropyl alcohol by a liquid-liquid interfacial precipitation method without ultrasonic pulverization. We attempted to improve their crystallinity by two post-treatments; thermal annealing and alcohol-soaking. The crystallinity of as-grown and dried C 60 nanotubes, which was poor due to the evaporation of solvent molecules from crystals in the drying process, was improved by annealing around 220 deg. C for 5 hours in vacuum. Dramatic improvement of crystallinity of as-grown samples was achieved by soaking into methanol and then drying in air. Raman, infrared and X-ray diffraction results suggest that the methanol-soaked samples exhibit a solvated tetragonal structure. The crystallinity improved by methanol-soaking did not degrade after removal of methanol molecules from samples by thermal annealing. Photo-polymerization of the structurally-improved C 60 nanotubes was examined to investigate an effect of crystallinity on the polymerization kinetics.

  14. Selection of views to materialize using simulated annealing algorithms

    Science.gov (United States)

    Zhou, Lijuan; Liu, Chi; Wang, Hongfeng; Liu, Daixin

    2002-03-01

    A data warehouse contains lots of materialized views over the data provided by the distributed heterogeneous databases for the purpose of efficiently implementing decision-support or OLAP queries. It is important to select the right view to materialize that answer a given set of queries. The goal is the minimization of the combination of the query evaluation and view maintenance costs. In this paper, we have addressed and designed algorithms for selecting a set of views to be materialized so that the sum of processing a set of queries and maintaining the materialized views is minimized. We develop an approach using simulated annealing algorithms to solve it. First, we explore simulated annealing algorithms to optimize the selection of materialized views. Then we use experiments to demonstrate our approach. The results show that our algorithm works better. We implemented our algorithms and a performance study of the algorithms shows that the proposed algorithm gives an optimal solution.

  15. Simulated parallel annealing within a neighborhood for optimization of biomechanical systems.

    Science.gov (United States)

    Higginson, J S; Neptune, R R; Anderson, F C

    2005-09-01

    Optimization problems for biomechanical systems have become extremely complex. Simulated annealing (SA) algorithms have performed well in a variety of test problems and biomechanical applications; however, despite advances in computer speed, convergence to optimal solutions for systems of even moderate complexity has remained prohibitive. The objective of this study was to develop a portable parallel version of a SA algorithm for solving optimization problems in biomechanics. The algorithm for simulated parallel annealing within a neighborhood (SPAN) was designed to minimize interprocessor communication time and closely retain the heuristics of the serial SA algorithm. The computational speed of the SPAN algorithm scaled linearly with the number of processors on different computer platforms for a simple quadratic test problem and for a more complex forward dynamic simulation of human pedaling.

  16. On periodic solutions to second-order Duffing type equations

    Czech Academy of Sciences Publication Activity Database

    Lomtatidze, Alexander; Šremr, Jiří

    2018-01-01

    Roč. 40, April (2018), s. 215-242 ISSN 1468-1218 Institutional support: RVO:67985840 Keywords : periodic solution * Duffing type equation * positive solution Subject RIV: BA - General Mathematics OBOR OECD: Applied mathematics Impact factor: 1.659, year: 2016 http://www. science direct.com/ science /article/pii/S1468121817301335?via%3Dihub

  17. Enhancement of thermoelectric power factor of Sr2CoMoO6 double perovskite by annealing in reducing atmosphere

    Science.gov (United States)

    Tanwar, Khagesh; Saxena, Mandvi; Maiti, Tanmoy

    2017-10-01

    In general, n-type thermoelectric materials are rather difficult to design. This study particularly pivoted on designing potential environmentally benign oxides based n-type thermoelectric material. We synthesized Sr2CoMoO6 (SCMO) polycrystalline ceramics via the solid-state synthesis route. XRD, SEM, and thermoelectric measurements were carried out for phase constitution, microstructure analysis, and to determine its potential for thermoelectric applications. As-sintered SCMO sample showed an insulator like behavior till 640 °C after which it exhibited an n-type non-degenerate semiconductor behavior followed by a p-n type conduction switching. To stabilize a high temperature n-type behavior, annealing of SCMO in reducing atmosphere (H2) at 1000 °C was carried out. After annealing, the SCMO demonstrated an n-type semiconductor behavior throughout the temperature range of measurement. The electrical conductivity (σ) and the power factor (S2σ) were found to be increased manifold in the annealed SCMO double perovskite.

  18. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Zolper, J.C.; Pearton, S.J.

    1996-01-01

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  19. P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2016-12-01

    Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

  20. Synthesis of V-doped TiO{sub 2} films by chemical bath deposition and the effect of post-annealing on their properties

    Energy Technology Data Exchange (ETDEWEB)

    Shopova-Gospodinova, Denitsa [Institut fuer Materialwissenschaft, Universitaet Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Jeurgens, Lars P.H.; Welzel, Udo [Max-Planck-Institut fuer Intelligente Systeme (formerly MPI for Metals Research), Department Mittemeijer, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Bauermann, Luciana Pitta; Hoffmann, Rudolf C. [Institut fuer Materialwissenschaft, Universitaet Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Bill, Joachim, E-mail: mwishopova@imw.uni-stuttgart.de [Institut fuer Materialwissenschaft, Universitaet Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart (Germany)

    2012-07-01

    Amorphous composite films, composed of a Ti{sub 1-x}V{sub x}O{sub 2} solid-solution phase and a V{sub 2}O{sub 5} phase, were produced by chemical bath deposition and subsequently air-annealed at various temperatures up to 550 Degree-Sign C. The microstructure and chemical composition of the as-prepared and annealed films were investigated by a combinatorial experimental approach using Scanning electron microscopy, X-ray powder diffraction and X-ray photoelectron spectroscopy. Ultraviolet-Visible Spectrometry was applied to determine the optical band gap of the as-prepared and annealed films. It followed that the incorporation of vanadium in the as-deposited films reduces the optical band gap of TiO{sub 2} from about 3.8 eV to 3.2 eV. Annealing of the films up to 350 Degree-Sign C leads to slight increase of band gap, as attributed to a reduction of the defect density in the initially amorphous oxide films due to the gradual development of long-range order and a concurrent reduction of the V{sup 4+}-dopant concentration in the Ti{sub 1-x}V{sub x}O{sub 2} solid-solution phase. The films crystallized upon annealing in air at 550 Degree-Sign C, which resulted in drastic changes of the phase constitution, optical absorbance and surface morphology. Due to the lower solubility of V{sup 4+} in crystalline TiO{sub 2}, V{sup 4+} segregates out of the crystallizing Ti{sub 1-x}V{sub x}O{sub 2} solid-solution phase, forming crystalline V{sub 2}O{sub 5} at the film surface. - Highlights: Black-Right-Pointing-Pointer Incorporation of vanadium in TiO2 thin film reduces its optical band gap. Black-Right-Pointing-Pointer Amorphous V-doped TiO2 and TiO2-V2O5 composite films were air-annealed up to 550 Masculine-Ordinal-Indicator C. Black-Right-Pointing-Pointer Annealing of the films up to 350 Degree-Sign C leads to slight increase of the band gap.

  1. Optical absorption analysis on diamond crystals modified by H2+ implantation and subsequent annealing

    International Nuclear Information System (INIS)

    Ma, Z.Q.; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Takeshita, Hidefumi; Goppelt-Langer, P.C.

    1995-01-01

    The optical absorption analysis on synthetic diamond irradiated by molecular hydrogen ions (H 2 + ) with 40 keV, 10 15 -10 17 H/cm 2 , at 100 K, showed that the absorption coefficient (α) of modified layer in UV-VIS range was increased with the implanted dose and decreased with thermal annealing. While its relative optical band gap (E r,opt ) was decreased with ion fluence and proportional to the annealing temperature. The possible microstructure of atomic coordination for as-implanted and subsequent annealing samples was discussed tentatively. In addition the optical inhomogeneity of the type Ib diamond has been revealed by absorption topograph at λ=430 nm. (author)

  2. Annealing of dislocation loops in neutron-irradiated copper investigated by positron annihilation

    International Nuclear Information System (INIS)

    Gauster, W.B.; Mantl, S.; Schober, T.; Triftshauser, W.

    1975-01-01

    Positron annihilation angular correlation measurements were carried out on neutron-irradiated copper as a function of annealing temperature. Two types of specimens were used: single crystals irradiated with fast neutrons, and 10 B-doped polycrystalline samples irradiated with thermal neutrons. All irradiations were at approximately 320 0 K. A structure in the annealing curve, not previously observed by other techniques, indicates that between 460 and 600 0 K the dislocation loops present after irradiation dissociate and more effective positron trapping sites are formed. (auth)

  3. New Poisson–Boltzmann type equations: one-dimensional solutions

    International Nuclear Information System (INIS)

    Lee, Chiun-Chang; Lee, Hijin; Hyon, YunKyong; Lin, Tai-Chia; Liu, Chun

    2011-01-01

    The Poisson–Boltzmann (PB) equation is conventionally used to model the equilibrium of bulk ionic species in different media and solvents. In this paper we study a new Poisson–Boltzmann type (PB n ) equation with a small dielectric parameter ε 2 and non-local nonlinearity which takes into consideration the preservation of the total amount of each individual ion. This equation can be derived from the original Poisson–Nernst–Planck system. Under Robin-type boundary conditions with various coefficient scales, we demonstrate the asymptotic behaviours of one-dimensional solutions of PB n equations as the parameter ε approaches zero. In particular, we show that in case of electroneutrality, i.e. α = β, solutions of 1D PB n equations have a similar asymptotic behaviour as those of 1D PB equations. However, as α ≠ β (non-electroneutrality), solutions of 1D PB n equations may have blow-up behaviour which cannot be found in 1D PB equations. Such a difference between 1D PB and PB n equations can also be verified by numerical simulations

  4. The influence of annealing atmosphere on the material properties of sol-gel derived SnO2:Sb films before and after annealing

    International Nuclear Information System (INIS)

    Jeng, Jiann-Shing

    2012-01-01

    SnO 2 films with and without Sb doping were prepared by the sol-gel spin-coating method. Material properties of the SnO 2 films with different Sb contents were investigated before and after annealing under O 2 or N 2 . When SnO 2 films are annealed under N 2 or O 2 , the resistivity decreases with increasing annealing temperature, which may be related to the increased crystallinity and reduced film defects. The intensity of SnO 2 peaks for both O 2 - and N 2 -annealed films increases as the annealing temperature increases. Small nodules are revealed on the surface of SnO 2 films after annealing in N 2 or O 2 atmospheres, and some voids are present on the surface of N 2 -annealed SnO 2 films. After doping with Sb, the resistivity of SnO 2 films after annealing in O 2 is greater than that of N 2 -annealed SnO 2 films. The surface morphology of SnO 2 films incorporating different molar ratios of Sb after annealing are similar to that of as-spun SnO 2 films with adding Sb. There were no voids found on the surfaces of N 2 -annealed SnO 2 :Sb films. In addition, the peak intensity of SnO 2 :Sb films after O 2 -annealing is higher than those films after N 2 -annealing. The chemical binding states and Hall mobility of the high-temperature annealed SnO 2 films without and with adding Sb are also related to the annealing atmospheres. This study discusses the connection among the material properties of the SnO 2 films with different Sb contents and how these properties are influenced by the Sb-doping concentration and the annealing atmospheres of SnO 2 films.

  5. Effects of annealing on the microstructure, corrosion resistance, and mechanical properties of RE{sub 65}Co{sub 25}Al{sub 10} (RE=Ce, La, Pr, Sm, and Gd) bulk metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Zhou [School of Materials Science and Engineering, University of Jinan, No. 336, West Road of Nan Xinzhuang, Jinan 250022 (China); Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, No. 336, West Road of Nan Xinzhuang, Jinan 250022 (China); Xing, Qi; Sun, Zhenxi; Xu, Jing; Zhao, Zhengfeng [School of Materials Science and Engineering, University of Jinan, No. 336, West Road of Nan Xinzhuang, Jinan 250022 (China); Chen, Shuying; Liaw, Peter K. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN (United States); Wang, Yan, E-mail: mse_wangy@ujn.edu.cn [School of Materials Science and Engineering, University of Jinan, No. 336, West Road of Nan Xinzhuang, Jinan 250022 (China); Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, No. 336, West Road of Nan Xinzhuang, Jinan 250022 (China)

    2015-02-25

    The effects of annealing on the microstructure, corrosion resistance and mechanical properties of the RE{sub 65}Co{sub 25}Al{sub 10} (RE=Ce, La, Pr, Sm, and Gd) bulk metallic glasses (BMGs) were studied. Microstructural changes are induced after annealing below the onset crystallization temperature of 484 K, resulting in the variation of thermal stability and crystallization behavior. A proper annealing enhances the corrosion resistance in 3.5 wt% NaCl solution, which can be attributed to reduction of the electrochemical activity and galvanic coupling effects in the chloride solution. Moreover, the RE-based BMG annealed at 484 K possesses the higher corrosion potential and lower corrosion current density, combined with the corrosion morphologies, which suggests the best corrosion resistance. Annealing can also obviously change the mechanical properties and fracture morphologies. It presents that free volume annihilation can cause more difficulty in the elastic atom rearrangement for the as-annealed RE-based BMGs.

  6. Multiobjective optimization with a modified simulated annealing algorithm for external beam radiotherapy treatment planning

    International Nuclear Information System (INIS)

    Aubry, Jean-Francois; Beaulieu, Frederic; Sevigny, Caroline; Beaulieu, Luc; Tremblay, Daniel

    2006-01-01

    Inverse planning in external beam radiotherapy often requires a scalar objective function that incorporates importance factors to mimic the planner's preferences between conflicting objectives. Defining those importance factors is not straightforward, and frequently leads to an iterative process in which the importance factors become variables of the optimization problem. In order to avoid this drawback of inverse planning, optimization using algorithms more suited to multiobjective optimization, such as evolutionary algorithms, has been suggested. However, much inverse planning software, including one based on simulated annealing developed at our institution, does not include multiobjective-oriented algorithms. This work investigates the performance of a modified simulated annealing algorithm used to drive aperture-based intensity-modulated radiotherapy inverse planning software in a multiobjective optimization framework. For a few test cases involving gastric cancer patients, the use of this new algorithm leads to an increase in optimization speed of a little more than a factor of 2 over a conventional simulated annealing algorithm, while giving a close approximation of the solutions produced by a standard simulated annealing. A simple graphical user interface designed to facilitate the decision-making process that follows an optimization is also presented

  7. Study of transformations by annealing of the body. Centred cubic {gamma} phase of uranium-molybdenum alloys; Etude des transformations par revenu de la phase {gamma} cubique centree des alliages uranium-molybdene

    Energy Technology Data Exchange (ETDEWEB)

    Mikailoff, H [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1959-06-15

    By annealing at different temperatures, we have studied the transformations of the body centred cubic {gamma} phase for two alloys containing 6 and 10 per cent molybdenum by weight respectively. There is a return to the equilibrium state by formation of the stable {alpha} orthorhombic and {epsilon} ordered tetragonal phases, following two types of reaction: - pearlite transformation by nucleation and growth from the grain boundaries, preponderant when the annealing takes place at temperature above 400 deg. C, and identical for the two types of alloys. This reaction has already been studied by numerous authors, who have constructed the corresponding TTT curves, - transformation inside the grains of the quenched solid solution when annealing takes place at 400 deg. C or below: 6 per cent alloy - precipitation of fine a phase particles, followed by progressive ordering of the solid solution enriched in molybdenum, 10 per cent alloy - formation of small ordered regions and then a fine a phase precipitate. In the course of this work we have paid particular attention to the study of intragranular reactions after low-temperature annealing, the reactions involved in this case not having been explained up to the present. The {gamma} phase transformation has been studied by means of three techniques: micrography - microhardness tests - X-ray diffraction. (author) [French] Nous avons etudie les transformations par revenu a differentes temperatures, de la phase {gamma} cubique centree des alliages U-Mo trempes, pour deux alliages a 6 et a 10 pour cent de molybdene en poids. Il y a retour a l'etat d'equilibre par formation des phases stables {alpha} orthorhombique et quadratique ordonnee, suivant deux types de reactions: - transformation perlitique par germination et croissance a partir des joints de grains, preponderante lorsque le recuit a lieu a temperature superieure a 400 deg. C, et identique pour les deux types d'alliages. Cette reaction a deja ete etudiee par de nombreux

  8. CdCl{sub 2} activation treatment: A comprehensive study by monitoring the annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Bing Lei; Rimmaudo, Ivan; Salavei, Andrei [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Piccinelli, Fabio [Department of Biotechnology, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy); Di Mare, Simone [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Menossi, Daniele; Bosio, Alessio; Romeo, Nicola [Physics and Earth Science Department, University of Parma, V.le G.P. Usberti 7A, 43124 (Italy); Romeo, Alessandro, E-mail: alessandro.romeo@univr.it [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy)

    2015-05-01

    CdTe thin film solar cells have demonstrated high scalability, high efficiency and low cost fabrication process. One of the key factors for the achievements of this technology is the transformation of the absorber layer by an activation treatment where chlorine reacts with CdTe in a controlled atmosphere or in air, improving the electrical properties of the absorber and enhancing the intermixing of the CdS/CdTe layers. With this work we study the activation process by analyzing the CdCl{sub 2} treatment made by wet deposition with different annealing temperatures from 310 °C up to 410 °C in air keeping the same CdCl{sub 2} concentration in methanol solution. In this way the whole dynamic of the chemical reaction from the minimum activation energy is analyzed. Activated CdTe layers have been analyzed by means of X-ray diffraction and atomic force microscopy. Finished devices with efficiencies from 8% for the low temperature annealing up to more than 14% for the high temperature ones have been thoroughly analyzed by current-voltage, capacitance-voltage and drive-level capacitance profiling techniques. The best performance has been achieved with an annealing temperature of 395 °C. - Highlights: • CdCl{sub 2} treatment with 6 different annealing temperatures has been studied. • The amount and the nature of defects change drastically with temperature. • Jsc is proportional to annealing temperature and to grain size. • Efficiency increases with annealing temperature until a threshold is reached.

  9. Low temperature annealing and cathodoluminescence studies of type 1 chondrule compositions

    Science.gov (United States)

    Dehart, John M.; Lofgren, Gary E.

    1991-01-01

    Preliminary results indicate that the yellow luminescing mesostases in type I chondrules can be altered by the effects of the low level thermal metamorphism. Although heat alone was insufficient to alter the CL, reheating for geologically relevant periods could have the same results as we obtained in a second series of experiments with water present. It is known that both water and solutions of sodium metasilicate greatly accelerate the devitrification of glasses. The results of the experiments that will be repeated should further clarify how the CL changes with increased thermal alteration.

  10. Effect of sodium on the creep-rupture behavior of type 304 stainless steel

    International Nuclear Information System (INIS)

    Natesan, K.; Chopra, O.K.; Kassner, T.F.

    1976-01-01

    Uniaxial creep-rupture data have been obtained for Type 304 stainless steel in the solution-annealed condition and after exposure to a flowing sodium environment at temperatures of 700, 650, and 600 0 C.The specimens were exposed to sodium for time periods between 120 and 5012 h to produce carbon penetration depths of approximately 0.010, 0.020, and 0.038 cm in the steel. Results showed that, as the depth of carbon penetration and the average carbon concentration in the steel increase, the rupture life increases and the minimum creep rate decreases. Creep correlations that relate rupture life, minimum creep rate, and time-to-tertiary creep were developed for the steel in both the solution-annealed and sodium-exposed conditions. Isochronous stress-creep strain curves and results on the calculations of the stress levels for 1 percent creep strain and long-term rupture life are also presented. 11 fig

  11. Direct comparison of quantum and simulated annealing on a fully connected Ising ferromagnet

    Science.gov (United States)

    Wauters, Matteo M.; Fazio, Rosario; Nishimori, Hidetoshi; Santoro, Giuseppe E.

    2017-08-01

    We compare the performance of quantum annealing (QA, through Schrödinger dynamics) and simulated annealing (SA, through a classical master equation) on the p -spin infinite range ferromagnetic Ising model, by slowly driving the system across its equilibrium, quantum or classical, phase transition. When the phase transition is second order (p =2 , the familiar two-spin Ising interaction) SA shows a remarkable exponential speed-up over QA. For a first-order phase transition (p ≥3 , i.e., with multispin Ising interactions), in contrast, the classical annealing dynamics appears to remain stuck in the disordered phase, while we have clear evidence that QA shows a residual energy which decreases towards zero when the total annealing time τ increases, albeit in a rather slow (logarithmic) fashion. This is one of the rare examples where a limited quantum speedup, a speedup by QA over SA, has been shown to exist by direct solutions of the Schrödinger and master equations in combination with a nonequilibrium Landau-Zener analysis. We also analyze the imaginary-time QA dynamics of the model, finding a 1 /τ2 behavior for all finite values of p , as predicted by the adiabatic theorem of quantum mechanics. The Grover-search limit p (odd )=∞ is also discussed.

  12. Enhancement of mechanical properties of a TRIP-aided austenitic stainless steel by controlled reversion annealing

    Energy Technology Data Exchange (ETDEWEB)

    Hamada, A.S., E-mail: atef.hamada@suezuniv.edu.eg [Centre for Advanced Steels Research, Box 4200, University of Oulu, 90014 Oulu (Finland); Metallurgical and Materials Engineering Department, Faculty of Petroleum & Mining Engineering, Suez University, Box 43721, Suez (Egypt); Kisko, A.P. [Centre for Advanced Steels Research, Box 4200, University of Oulu, 90014 Oulu (Finland); Sahu, P. [Department of Physics, Jadavpur University, Kolkata 700032 (India); Karjalainen, L.P. [Centre for Advanced Steels Research, Box 4200, University of Oulu, 90014 Oulu (Finland)

    2015-03-25

    Controlled martensitic reversion annealing was applied to a heavily cold-worked metastable austenitic low-Ni Cr–Mn austenitic stainless steel (Type 201) to obtain different ultrafine austenite grain sizes to enhance the mechanical properties, which were then compared with the conventional coarse-grained steel. Characterization of the deformed and reversion annealed microstructures was performed by electron back scattered diffraction (EBSD), X-ray diffraction (XRD) and light and transmission electron microscopy (TEM). The steel with a reverted grain size ~1.5 μm due to annealing at 800 °C for 10 s showed significant improvements in the mechanical properties with yield stress ~800 MPa and tensile strength ~1100 MPa, while the corresponding properties of its coarse grained counterpart were ~450 MPa and ~900 MPa, respectively. However, the fracture elongation of the reversion annealed steel was ~50% as compared to ~70% in the coarse grained steel. A further advantage is that the anisotropy of mechanical properties present in work-hardened steels also disappears during reversion annealing.

  13. Assessment of the recovery annealing efficiency for VVER-1000 materials' structure reset and lifetime extension

    International Nuclear Information System (INIS)

    Gurovich, B.; Kuleshova, E.; Prikhodko, K.; Fedotova, S.

    2011-01-01

    The results of the VVER-1000 reactor pressure vessels welds studies based on the surveillance specimens sets have revealed a high embrittlement rate of steel with high nickel content compared with predicted embrittlement determined from the Russian Guide. For these critical vessels further safe operation (even during design service life) is not allowed without additional measures (recovery annealing of the VVER-1000 welds as earlier for VVER- 440). The reason is that the rate of high nickel VVER-1000 welds embrittlement is significantly higher than that is for base metal. In order to solve a problem of VVER-1000 lifetime extension recovery annealing validation and accelerated reirradiation of specimens for prolonged operation period estimation after annealing were necessary. In this work comparison of electron-microscopy fine structure studies and fractographic studies of Charpy specimens fracture surface of the VVER-1000 high nickel welds in different states were carried out. It allows estimation of the recovery annealing effect on steels structure and its behavior at further operation. It is shown that both secondary and primary irradiation causes alike radiation-induced fine structure changes: dislocation loops and nano-size precipitates. Recovery annealing leads to full dislocation loops dissolution and significant nano-size precipitates solution but not to the initial values. The rate of radiation defects and radiation-induced precipitates accumulation at reirradiation weld after recovery annealing is lower than at primary irradiation and determine the lower secondary embrittlement rate of VVER-1000 weld. (authors)

  14. Influence of initial annealing on structure evolution and magnetic properties of 3.4% Si non-oriented steel during final annealing

    Energy Technology Data Exchange (ETDEWEB)

    Simões Mendanha Pedrosa, Josiane [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil); Costa Paolinelli, Sebastião da [Research Department Aperam South America, Praça Primeiro de Maio, 9, Timóteo MG-35180018 (Brazil); Barros Cota, André, E-mail: abcota@ufop.br [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil)

    2015-11-01

    The effect of the initial annealing on structure evolution and magnetic properties during the final annealing of a 3.4% Si non-oriented grain steel was evaluated. Half of the samples were submitted to initial annealing at 1030 °C before cold rolling and all samples were subjected to final annealing process at temperatures from 540 °C to 1100 °C. The magnetic induction and core loss in the final samples, the microstructure by optical microscopy and the crystallographic texture by X-ray diffraction and EBSD were evaluated. The results show that the samples without initial annealing presented better magnetic properties than the samples with initial annealing, due to the higher ratio between Eta fiber and Gamma fiber volume fractions (Eta/Gamma ratio) in their structure after final annealing. - Highlights: • Texture and magnetic properties of 3.4% Si non-oriented electrical steel were measured. • Without initial annealing, better texture and magnetic properties were obtained. • Good texture and magnetic properties are obtained with Steckel hot band structure.

  15. Annealing study on radiation-induced defects in 6H-SiC

    International Nuclear Information System (INIS)

    Pinheiro, M.V.B.; Lingner, T.; Caudepon, F.; Greulich-Weber, S.; Spaeth, J.M.

    2004-01-01

    We present the results of a systematic isochronal annealing investigation of vacancy-related defects in electron-irradiated n-type 6H-SiC:N. A series of 10 samples cut from a commercial wafer and annealed up to 1200 C after electron-irradiation (1.5 x 10 18 cm -3 ) was characterized with photoluminescence (PL), Magnetic circular dichroism of the absorption (MCDA) and conventional electron paramagnetic resonance (EPR). Apart from less stable triplet-related defects which vanished between 150 C and 300 C, the thermal behavior of three radiation-induced defects was studied: the silicon vacancy (V Si ), the carbon-antisite-carbon-vacancy pair (C Si -V C ) and the D1 center. Their annealing behavior showed that the destruction of the isolated V Si between 750 C and 900 C is followed by the formation of thermally more stable C Si -V C pairs, a result that has been theoretically predicted recently. By further heating the samples the C Si -V C pairs are annealed out between 900 C and 1050 C and were followed by an increase in the D1 center concentration. (orig.)

  16. Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

    Directory of Open Access Journals (Sweden)

    Vojs M.

    2012-07-01

    Full Text Available Thin films of gallium-doped zinc oxide (ZnO:Ga were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1 × 1015 ÷ 2 × 1016 cm-2. After the ion implantation, the films were annealed under oxygen and nitrogen ambient, at different temperatures and time, and the effect on their microstructure, type and range of conductivity, and optical properties was investigated. Post-implantation annealing at 550 °C resulted in n-type conductivity films with the highest electron concentration of 1.4 × 1020 cm-3. It was found that the annealing parameters had a profound impact on the film’s properties. A p-type conductivity (a hole concentration of 2.8 × 1019 cm-3, mobility of 0.6 cm2/V s was observed in a sample implanted with 1 × 1016 cm-2 after a rapid thermal annealing (RTA in N2 at 400 °C. Optical transmittance of all films was >84% in the wavelength range of 390–1100 nm. The SIMS depth profile of the complex 30NO− ions reproduces well a Gaussian profile of ion implantation. XRD patterns reveal a polycrystalline structure of N-implanted ZnO:Ga films with a c-axis preferred orientation of the crystallites. Depending on the annealing conditions, the estimated crystallite size increased 25 ÷ 42 nm and average micro-strains decreased 1.19 × 10-2 ÷ 6.5 × 10-3 respectively.

  17. Simulated annealing and circuit layout

    NARCIS (Netherlands)

    Aarts, E.H.L.; Laarhoven, van P.J.M.

    1991-01-01

    We discuss the problem of approximately sotvlng circuit layout problems by simulated annealing. For this we first summarize the theoretical concepts of the simulated annealing algorithm using Ihe theory of homogeneous and inhomogeneous Markov chains. Next we briefly review general aspects of the

  18. Radiation annealing in cuprous oxide

    DEFF Research Database (Denmark)

    Vajda, P.

    1966-01-01

    Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square...

  19. Strain-Annealing Based Grain Boundary Engineering to Evaluate its Sole Implication on Intergranular Corrosion in Extra-Low Carbon Type 304L Austenitic Stainless Steel

    Science.gov (United States)

    Pradhan, S. K.; Bhuyan, P.; Kaithwas, C.; Mandal, Sumantra

    2018-07-01

    Strain-annealing based thermo-mechanical processing has been performed to promote grain boundary engineering (GBE) in an extra-low carbon type austenitic stainless steel without altering the grain size and residual strain to evaluate its sole influence on intergranular corrosion. Single-step processing comprising low pre-strain ( 5 and 10 pct) followed by annealing at 1273 K for 1 hour have resulted in a large fraction of Σ3 n boundaries and significant disruption in random high-angle grain boundaries (RHAGBs) connectivity. This is due to the occurrence of prolific multiple twinning in these specimens as confirmed by their large twin-related domain and twin-related grain size ratio. Among the iterative processing, the schedule comprising two cycles of 10 and 5 pct deformation followed by annealing at 1173 K for 1 hour has yielded the optimum GBE microstructure with the grain size and residual strain akin to the as-received condition. The specimens subjected to the higher number of iterations failed to realize GBE microstructures due to the occurrence of partial recrystallization. Owing to the optimum grain boundary character distribution, the GBE specimen has exhibited remarkable resistance against sensitization and intergranular corrosion as compared to the as-received condition. Furthermore, the lower depth of percolation in the GBE specimen is due to the significant disruption of RHAGBs connectivity as confirmed from its large twin-related domain and lower fractal dimension.

  20. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Zhang Yangting; Drucker, Jeff

    2003-01-01

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  1. Annealing behavior of alpha recoil tracks in phlogopite

    International Nuclear Information System (INIS)

    Gao Shaokai; Yuan Wanming; Dong Jinquan; Bao Zengkuan

    2005-01-01

    Alpha recoil tracks (ARTs) formed during the a-decay of U, Th as well as their daughter nuclei are used as a new dating method which is to some extent a complementarity of fission track dating due to its ability to determine the age of young mineral. ARTs can be observable under phase-contrast interference microscope through chemical etching. In order to study the annealing behavior of ARTs in phlogopite, two methods of annealing experiments were executed. Samples were annealed in the electronic tube furnace at different temperatures ranging from 250 degree C to 450 degree C in steps of 50 degree C. For any given annealing temperature, different annealing times were used until total track fading were achieved. It is found that ARTs anneal much more easily than fission tracks, the annealing ratio increase non-linearly with annealing time and temperature. Using the Arrhenius plot, an activation energy of 0.68ev is finally found for 100% removal of ARTs, which is less than the corresponding value for fission tracks (FTs). Through extending the annealing time to geological time, a much lower temperature range of the sample's cooling history can be got.

  2. New Exact Solutions for the Wick-Type Stochastic Kudryashov–Sinelshchikov Equation

    International Nuclear Information System (INIS)

    Ray, S. Saha; Singh, S.

    2017-01-01

    In this article, exact solutions of Wick-type stochastic Kudryashov–Sinelshchikov equation have been obtained by using improved Sub-equation method. We have used Hermite transform for transforming the Wick-type stochastic Kudryashov–Sinelshchikov equation to deterministic partial differential equation. Also we have applied inverse Hermite transform for obtaining a set of stochastic solutions in the white noise space. (paper)

  3. Annealing effect on magnetic property and recording performance of [FePt/MgO]n perpendicular magnetic recording media

    International Nuclear Information System (INIS)

    Suzuki, Takao; Zhang, Zhengang; Singh, Amarendra K.; Yin, Jinhua; Perumal, A.; Osawa, Hiroshi

    2005-01-01

    Granular-type FePt perpendicular magnetic recording media with (001)-texture, obtained by annealing FePt/MgO multilayer films, are fabricated onto 2.5-in glass discs. For the sake of spin-stand testing, the coercivity of FePt films is carefully modulated by controlling the annealing conditions. With annealing, exchange coupling between FePt grains is decreased, indicated by the reductions in α value and activation volume. FePt ordering process is dependent on initial FePt/MgO multilayer structures, which governs the optimum annealing condition regarding coercivities and α(=4π(dM/dH)H=Hc). The SNR ratio exhibits a sensitive dependence on initial FePt/MgO multilayer structures as well as annealing conditions

  4. Exponentially Biased Ground-State Sampling of Quantum Annealing Machines with Transverse-Field Driving Hamiltonians.

    Science.gov (United States)

    Mandrà, Salvatore; Zhu, Zheng; Katzgraber, Helmut G

    2017-02-17

    We study the performance of the D-Wave 2X quantum annealing machine on systems with well-controlled ground-state degeneracy. While obtaining the ground state of a spin-glass benchmark instance represents a difficult task, the gold standard for any optimization algorithm or machine is to sample all solutions that minimize the Hamiltonian with more or less equal probability. Our results show that while naive transverse-field quantum annealing on the D-Wave 2X device can find the ground-state energy of the problems, it is not well suited in identifying all degenerate ground-state configurations associated with a particular instance. Even worse, some states are exponentially suppressed, in agreement with previous studies on toy model problems [New J. Phys. 11, 073021 (2009)NJOPFM1367-263010.1088/1367-2630/11/7/073021]. These results suggest that more complex driving Hamiltonians are needed in future quantum annealing machines to ensure a fair sampling of the ground-state manifold.

  5. Comparative study on the effect of annealing treatments on RTL mechanism in natural quartz from different origins

    International Nuclear Information System (INIS)

    Mebhah, D.; Imatoukene, D.; Lounis-Mokrani, Z.; Kechouane, M.

    2009-01-01

    The behaviour of trap centres and luminescence centres has been investigated for fired and unfired natural quartz from bricks and sediments irradiated at 100 Gy and annealed at different temperatures in the range 350-700 deg. C. The annealing treatment affects thermoluminescence (TL) glow curve as various changes were observed. The higher sensitization occurred for an annealing in the region 550-600 deg. C. At this annealing temperature, it has been observed the emergence of two peaks arising at 96 and 180 deg. C. At lower annealing temperatures, these peaks are overlapped by the peaks localized at 90 and 195 deg. C, respectively. Concerning the fired quartz, the higher sensitization occurred for an annealing in the region 500-550 deg. C for peak temperature around 200 deg. C and an unusual desensitization for the peak temperature around 100 deg. C. The behaviour of the two types of quartz is analyzed regarding to their kinetic parameters and luminescence emission and compared to literature data.

  6. Comparative study on the effect of annealing treatments on RTL mechanism in natural quartz from different origins

    Energy Technology Data Exchange (ETDEWEB)

    Mebhah, D., E-mail: mebhahd@yahoo.f [Centre de Recherche Nucleaire d' Alger, 2 Bd, Frantz Fanon, BP 399 (Algeria); Imatoukene, D.; Lounis-Mokrani, Z. [Centre de Recherche Nucleaire d' Alger, 2 Bd, Frantz Fanon, BP 399 (Algeria); Kechouane, M. [Faculte de Physique, USTHB, BP 32 El Alia (Algeria)

    2009-12-15

    The behaviour of trap centres and luminescence centres has been investigated for fired and unfired natural quartz from bricks and sediments irradiated at 100 Gy and annealed at different temperatures in the range 350-700 deg. C. The annealing treatment affects thermoluminescence (TL) glow curve as various changes were observed. The higher sensitization occurred for an annealing in the region 550-600 deg. C. At this annealing temperature, it has been observed the emergence of two peaks arising at 96 and 180 deg. C. At lower annealing temperatures, these peaks are overlapped by the peaks localized at 90 and 195 deg. C, respectively. Concerning the fired quartz, the higher sensitization occurred for an annealing in the region 500-550 deg. C for peak temperature around 200 deg. C and an unusual desensitization for the peak temperature around 100 deg. C. The behaviour of the two types of quartz is analyzed regarding to their kinetic parameters and luminescence emission and compared to literature data.

  7. Reduced annealing temperatures in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  8. Stochastic epidemic-type model with enhanced connectivity: exact solution

    International Nuclear Information System (INIS)

    Williams, H T; Mazilu, I; Mazilu, D A

    2012-01-01

    We present an exact analytical solution to a one-dimensional model of the susceptible–infected–recovered (SIR) epidemic type, with infection rates dependent on nearest-neighbor occupations. We use a quantum mechanical approach, transforming the master equation via a quantum spin operator formulation. We calculate exactly the time-dependent density of infected, recovered and susceptible populations for random initial conditions. Our results compare well with those of previous work, validating the model as a useful tool for additional and extended studies in this important area. Our model also provides exact solutions for the n-point correlation functions, and can be extended to more complex epidemic-type models

  9. Simulated annealing with constant thermodynamic speed

    International Nuclear Information System (INIS)

    Salamon, P.; Ruppeiner, G.; Liao, L.; Pedersen, J.

    1987-01-01

    Arguments are presented to the effect that the optimal annealing schedule for simulated annealing proceeds with constant thermodynamic speed, i.e., with dT/dt = -(v T)/(ε-√C), where T is the temperature, ε- is the relaxation time, C ist the heat capacity, t is the time, and v is the thermodynamic speed. Experimental results consistent with this conjecture are presented from simulated annealing on graph partitioning problems. (orig.)

  10. Annealing Effect on Photovoltaic Performance of CdSe Quantum-Dots-Sensitized TiO2 Nanorod Solar Cells

    Directory of Open Access Journals (Sweden)

    Yitan Li

    2012-01-01

    Full Text Available Large area rutile TiO2 nanorod arrays were grown on F:SnO2 (FTO conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs were deposited onto single-crystalline TiO2 nanorod arrays by a chemical bath deposition (CBD method to make a photoelectrode. The solar cell was assembled using a CdSe-TiO2 nanostructure as the photoanode and polysulfide solution as the electrolyte. The annealing effect on optical and photovoltaic properties of CdSe quantum-dots-sensitized TiO2 nanorod solar cells was studied systematically. A significant change of the morphology and a regular red shift of band gap of CdSe nanoparticles were observed after annealing treatment. At the same time, an improved photovoltaic performance was obtained for quantum-dots-sensitized solar cell using the annealed CdSe-TiO2 nanostructure electrode. The power conversion efficiency improved from 0.59% to 1.45% as a consequence of the annealing effect. This improvement can be explained by considering the changes in the morphology, the crystalline quality, and the optical properties caused by annealing treatment.

  11. Effect of annealing treatment on microstructure evolution and the associated corrosion behavior of a super-duplex stainless steel

    International Nuclear Information System (INIS)

    Deng, B.; Jiang, Y.M.; Gao, J.; Li, J.

    2010-01-01

    The influence of annealing temperature on the pitting corrosion of a super-duplex stainless steel (SDSS) with mischmetal addition was investigated in chloride solution by critical pitting temperature (CPT) measurement. The corrosion behavior is strongly dependent on the microstructure, namely the presence of secondary phases, elemental partitioning behavior and volume fractions of ferrite and austenite. Based on CPT results and alloying rules, the optimal annealing temperature is determined as 1070 o C and a guideline for further development of improved SDSS is formulated.

  12. Coherent Coupled Qubits for Quantum Annealing

    Science.gov (United States)

    Weber, Steven J.; Samach, Gabriel O.; Hover, David; Gustavsson, Simon; Kim, David K.; Melville, Alexander; Rosenberg, Danna; Sears, Adam P.; Yan, Fei; Yoder, Jonilyn L.; Oliver, William D.; Kerman, Andrew J.

    2017-07-01

    Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times limited primarily by the use of large persistent currents Ip. Here, we examine an alternative approach using qubits with smaller Ip and longer coherence times. We demonstrate tunable coupling, a basic building block for quantum annealing, between two flux qubits with small (approximately 50-nA) persistent currents. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence.

  13. Scheduling of hybrid types of machines with two-machine flowshop as the first type and a single machine as the second type

    Science.gov (United States)

    Hsiao, Ming-Chih; Su, Ling-Huey

    2018-02-01

    This research addresses the problem of scheduling hybrid machine types, in which one type is a two-machine flowshop and another type is a single machine. A job is either processed on the two-machine flowshop or on the single machine. The objective is to determine a production schedule for all jobs so as to minimize the makespan. The problem is NP-hard since the two parallel machines problem was proved to be NP-hard. Simulated annealing algorithms are developed to solve the problem optimally. A mixed integer programming (MIP) is developed and used to evaluate the performance for two SAs. Computational experiments demonstrate the efficiency of the simulated annealing algorithms, the quality of the simulated annealing algorithms will also be reported.

  14. Highly Efficient Organic UV Photodetectors Based on Polyfluorene and Naphthalenediimide Blends: Effect of Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Gorkem Memisoglu

    2012-01-01

    Full Text Available A solution-processed organic ultraviolet photodetector (UV-PD is introduced. The active layer of the UV-PD consists of poly(9,9-dioctyl fluorenyl-2,7–yleneethynylene (PFE and N,N′-bis-n-butyl-1,4,5,8- naphthalenediimide (BNDI with a weight ratio of 3 : 1 in chloroform. The effect of thermal annealing on the device properties was investigated from room temperature to 80∘C. The full device structure of ITO/PEDOT:PSS/PFE:BNDI (3 : 1/Al gave responsivity of 410 mA/W at −4 V under 1 mW/cm2 UV light at 368 nm when 60∘C of annealing temperature was used during its preparation. The devices that were annealed over the crystallization temperature of PFE showed a charge transfer resistance increase and a mobility decrease.

  15. Energy Saving in Industrial Annealing Furnaces

    Directory of Open Access Journals (Sweden)

    Fatma ÇANKA KILIÇ

    2018-03-01

    Full Text Available In this study, an energy efficiency studies have been carried out in a natural gas-fired rolling mill annealing furnace of an industrial establishment. In this context, exhaust gas from the furnace has been examined in terms of waste heat potential. In the examinations that have been made in detail; waste heat potential was found as 3.630,31 kW. Technical and feasibility studies have been carried out to realize electricity production through an Organic Rankine Cycle (ORC system for evaluating the waste heat potential of the annealing furnace. It has been calculated that 1.626.378,88 kWh/year of electricity can be generated by using the exhaust gas waste heat of the annealing furnace through an ORC system to produce electric energy with a net efficiency of 16%. The financial value of this energy was determined as 436.032,18 TL/year and the simple repayment period of the investment was 8,12 years. Since the annealing period of the annealing furnace is 2800 hours/year, the investment has not been found to be feasible in terms of the feasibility studies. However, the investment suitability can be assured when the annealing furnace is operating at full capacity for 8,000 hours or more annually.

  16. Studies of isothermal annealing of fission fragment and alpha particle tracks in Cr-39 polymer detectors

    International Nuclear Information System (INIS)

    Zaky, M.F.; Youssef, A.A.

    2002-01-01

    Two groups of CR-39 detectors samples are exposed to two types of charged particle radiation. The first group are severe damaged with fission fragment tracks from 2 52C f source. The second accepted alpha particles resulting from the interaction of highly energetic 1 9F -ions and a copper disk with thickness 1 cm, which are of less damage tracks than fission fragments. , The isothermal annealing of tracks in the temperature range from 175 to 300 degree C in step 25 degree C for annealing time of 10,15,20,25 and 30 minutes has been investigated. The changes introduced in the track density and track diameter for two types of irradiation in the detector have been observed and compared between them. The results indicate that the track density and the size of the tracks are considerably changed due to annealing

  17. Corrosion testing of type 304L stainless steel in tuff groundwater environments

    International Nuclear Information System (INIS)

    Westerman, R.E.; Pitman, S.G.; Haberman, J.H.

    1987-11-01

    The stress-corrosion cracking (SCC) resistance of Type 304L stainless steel (SS) to elevated temperatures in tuff rock and tuff groundwater environments was determined under irradiated and nonirradiated conditions using U-bend specimens and slow-strain-rate tests. The steel was tested both in the solution-annealed condition and after sensitization heat treatments. The material was found to be susceptible to SCC in both the solution-annealed and solution-annealed-and-sensitized conditions when exposed to an irradiated crushed tuff rock environment containing air and water vapor at 90 0 C. A similar exposure at 50 0 C did not result in failure after a 25-month test duration. Specimens of sensitized 304 SS conditioned with a variety of sensitization heat treatments resisted failure during a test of 1-year duration in which a nonirradiated environment of tuff rock and groundwater held at 200 0 C was allowed to boil to dryness on a cyclical basis. All specimens of sensitized 304 SS exposed to this environment failed. Slow-strain-rate studies were performed on 304L, 304, and 316L SS specimens. The 304L SS was tested in J-13 well water at 150 0 C, and the 316L SS at 95 0 C. Neither material showed evidence of SCC in these tests. Sensitized 304 SS did exhibit SCC in J-13 well water in tests conducted at 150 0 C. 12 refs., 27 figs., 13 tabs

  18. Microstructural Evolutions During Reversion Annealing of Cold-Rolled AISI 316 Austenitic Stainless Steel

    Science.gov (United States)

    Naghizadeh, Meysam; Mirzadeh, Hamed

    2018-06-01

    Microstructural evolutions during reversion annealing of a plastically deformed AISI 316 stainless steel were investigated and three distinct stages were identified: the reversion of strain-induced martensite to austenite, the primary recrystallization of the retained austenite, and the grain growth process. It was found that the slow kinetics of recrystallization at lower annealing temperatures inhibit the formation of an equiaxed microstructure and might effectively impair the usefulness of this thermomechanical treatment for the objective of grain refinement. By comparing the behavior of AISI 316 and 304 alloys, it was found that the mentioned slow kinetics is related to the retardation effect of solute Mo in the former alloy. At high reversion annealing temperature, however, an equiaxed austenitic microstructure was achieved quickly in AISI 316 stainless steel due to the temperature dependency of retardation effect of molybdenum, which allowed the process of recrystallization to happen easily. Conclusively, this work can shed some light on the issues of this efficient grain refining approach for microstructural control of austenitic stainless steels.

  19. Influence of sodium evnironment on the uniaxial tensile behavior of titanium modified type 316 stainless steel

    International Nuclear Information System (INIS)

    Natesan, K.; Chopra, O.K.; Kassner, T.F.

    1978-01-01

    True stress-true strain tensile data have been obtained for titanium modified type 316 stainless steel in the solution annealed condition and after exposure to a flowing sodium environment at temperature of 700, 650, 600 and 550 0 C. The specimens were exposed to sodium for times between 120 and 5012 h to produce carbon penetration depths in the range 0.05-0.30 mm. The Voce equation was used to describe tensile flow curves for plastic strains above 0.005. The results showed that, when compared with solution annealed specimens, the tensile flow behavior of the sodium exposed specimens is characterized by a higher strain hardening rate, which decreases rapidly as the flow stress increases. The loss in tensile ductility of the material due to carburization in sodium environment was found to be minimal. (Auth.)

  20. Improve earthquake hypocenter using adaptive simulated annealing inversion in regional tectonic, volcano tectonic, and geothermal observation

    Energy Technology Data Exchange (ETDEWEB)

    Ry, Rexha Verdhora, E-mail: rexha.vry@gmail.com [Master Program of Geophysical Engineering, Faculty of Mining and Petroleum Engineering, Institut Teknologi Bandung, Jalan Ganesha No.10, Bandung 40132 (Indonesia); Nugraha, Andri Dian, E-mail: nugraha@gf.itb.ac.id [Global Geophysical Research Group, Faculty of Mining and Petroleum Engineering, Institut Teknologi Bandung, Jalan Ganesha No.10, Bandung 40132 (Indonesia)

    2015-04-24

    Observation of earthquakes is routinely used widely in tectonic activity observation, and also in local scale such as volcano tectonic and geothermal activity observation. It is necessary for determining the location of precise hypocenter which the process involves finding a hypocenter location that has minimum error between the observed and the calculated travel times. When solving this nonlinear inverse problem, simulated annealing inversion method can be applied to such global optimization problems, which the convergence of its solution is independent of the initial model. In this study, we developed own program codeby applying adaptive simulated annealing inversion in Matlab environment. We applied this method to determine earthquake hypocenter using several data cases which are regional tectonic, volcano tectonic, and geothermal field. The travel times were calculated using ray tracing shooting method. We then compared its results with the results using Geiger’s method to analyze its reliability. Our results show hypocenter location has smaller RMS error compared to the Geiger’s result that can be statistically associated with better solution. The hypocenter of earthquakes also well correlated with geological structure in the study area. Werecommend using adaptive simulated annealing inversion to relocate hypocenter location in purpose to get precise and accurate earthquake location.

  1. The Parameters Optimization of MCR-WPT System Based on the Improved Genetic Simulated Annealing Algorithm

    Directory of Open Access Journals (Sweden)

    Sheng Lu

    2015-01-01

    Full Text Available To solve the problem of parameter selection during the design of magnetically coupled resonant wireless power transmission system (MCR-WPT, this paper proposed an improved genetic simulated annealing algorithm. Firstly, the equivalent circuit of the system is analysis in this study and a nonlinear programming mathematical model is built. Secondly, in place of the penalty function method in the genetic algorithm, the selection strategy based on the distance between individuals is adopted to select individual. In this way, it reduces the excess empirical parameters. Meanwhile, it can improve the convergence rate and the searching ability by calculating crossover probability and mutation probability according to the variance of population’s fitness. At last, the simulated annealing operator is added to increase local search ability of the method. The simulation shows that the improved method can break the limit of the local optimum solution and get the global optimum solution faster. The optimized system can achieve the practical requirements.

  2. Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO{sub 2} thin films by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Muaz, A. K. M.; Hashim, U., E-mail: uda@unimap.edu.my; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L. [Institute of Nano Electronic Engineering, Univerisiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia)

    2016-07-06

    In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO{sub 2}) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO{sub 2} substrates by spin coating technique under room temperature. The nanoparticles TiO{sub 2} solution was synthesized using Ti{OCH(CH_3)_2}{sub 4} as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO{sub 2} sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase as the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO{sub 2} thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.

  3. Temperature Scaling Law for Quantum Annealing Optimizers.

    Science.gov (United States)

    Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

    2017-09-15

    Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

  4. Magnetic characterization of nanocrystalline Fe80−xCrxCo20 (15≤x≤35) alloys during milling and subsequent annealing

    International Nuclear Information System (INIS)

    Rastabi, Reza Amini; Ghasemi, Ali; Tavoosi, Majid; Sodaee, Tahmineh

    2016-01-01

    Magnetic characterization of nanocrystalline Fe–Cr–Co alloys during milling and annealing process was the goal of this study. To formation of Fe 80−x Cr x Co 20 (15≤x≤35) solid solution, different powder mixtures of Fe, Cr and Co elements were mechanically milled in a planetary ball mill. The annealing process was done in as-milled samples at different temperature in the range of 500–640 °C for 2 h. The produced samples were characterized using X-ray diffraction, scanning electron microscopy, differential scanning calorimetry and vibrating sample magnetometer. Performed mechanical alloying in different powder mixtures lead to the formation of Fe–Cr–Co α-phase solid solution with average crystallite sizes of about 10 nm. The produced nanocrystalline alloys exhibit magnetic properties with the coercivity and saturation of magnetization in the range of 110–200 Oe and 150–220 emu/g, respectively. The coercivity of produced alloys after annealing process decreased and reached to about 40–150 Oe. The highest value of coercivity in as-milled and annealed samples was achieved in alloys with higher Cr contents. - Highlights: • Hc and Ms of produced alloys obtained in the range of 110–200 Oe and 150–220 emu/g. • The highest value of Hc in milled and annealed samples was achieved in Fe 45 Cr 35 Co 20 . • Hc of produced alloys after spinodal decomposition decreased to about 40–150 Oe. • The effect of crystalline defects and residual strain on magnetic fields pinning in milled samples is higher than spinodal decomposition in annealed samples. • The highest value of Hc in as-milled and annealed samples was achieved in Fe 45 Cr 35 Co 20 . The coercivity of produced alloys after annealing process decreased and reach to about 40–150 Oe. • The produced nanocrystalline alloys exhibit magnetic properties with the coercivity and saturation of magnetization in the range of 110–200 Oe and 150–220 emu/g, respectively.

  5. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    Science.gov (United States)

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  6. Infrared thermal annealing device

    International Nuclear Information System (INIS)

    Gladys, M.J.; Clarke, I.; O'Connor, D.J.

    2003-01-01

    A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

  7. Simulated annealing CFAR threshold selection for South African ship detection in ASAR imagery

    CSIR Research Space (South Africa)

    Schwegmann, CP

    2014-07-01

    Full Text Available ALTER CURRENT THRESHOLD PLANE IF CANDIDATE IS BETTER IF CANDIDATE IS WORSE IF (RANDOM NUMBER < BOLTZMANN PROBABILITY) Fig. 3. The iterative procedure of Simulated Annealing. Starting at some initial threshold plane Ti (x, y) each iteration tests... if the new solution T is better than the previous best solution Tb (x, y). A possible “bad” candidate can replace the current best due to the Boltzmann probability. A new threshold plane Tb (x, y) is defined which is mapped to the 2D distribution map...

  8. Simulated Annealing-Based Krill Herd Algorithm for Global Optimization

    Directory of Open Access Journals (Sweden)

    Gai-Ge Wang

    2013-01-01

    Full Text Available Recently, Gandomi and Alavi proposed a novel swarm intelligent method, called krill herd (KH, for global optimization. To enhance the performance of the KH method, in this paper, a new improved meta-heuristic simulated annealing-based krill herd (SKH method is proposed for optimization tasks. A new krill selecting (KS operator is used to refine krill behavior when updating krill’s position so as to enhance its reliability and robustness dealing with optimization problems. The introduced KS operator involves greedy strategy and accepting few not-so-good solutions with a low probability originally used in simulated annealing (SA. In addition, a kind of elitism scheme is used to save the best individuals in the population in the process of the krill updating. The merits of these improvements are verified by fourteen standard benchmarking functions and experimental results show that, in most cases, the performance of this improved meta-heuristic SKH method is superior to, or at least highly competitive with, the standard KH and other optimization methods.

  9. Influence of nitrogenation on structure development and magnetic properties of mechanically alloyed and annealed Sm-Fe powders

    International Nuclear Information System (INIS)

    Teresiak, A.; Kubis, M.; Mattern, N.; Wolf, M.; Gruner, W.; Mueller, K.-H.

    1999-01-01

    Sm-Fe-N compounds were prepared by mechanical alloying, subsequent annealing and nitrogenation. For crystal structure investigations of the non-equilibrium phases Sm 2 Fe 17+y N x , formed at various annealing temperatures T A for 1 h, X-ray diffraction with following Rietveld analysis was used. A volume expansion of 6.2% was observed after nitrogenation. As for the non-nitrided Sm-Fe alloys a modified TbCu 7 -type structure (space group P6/mmm) and a modified Th 2 Zn 17 -type structure (space group R anti 3m) have been observed. However, for nitrogenated Sm-Fe samples the modified Th 2 Zn 17 -type structure forms already for annealing at T A =750 C prior to nitrogenation. For samples annealed, prior to nitrogenation, between T A =600 and 700 C the modified TbCu 7 -type structure was found, in which the nitrogen occupies randomly the 3f position with an occupancy larger than 1/3. The partially ordered, modified Th 2 Zn 17 -type structure formed for 750 C A 2 Zn 17 -type structure by introducing additional Fe(6c) and Sm(3a) positions. The degree of order of the Sm atoms and Fe-dumbbells increases with increasing T A . The nitrogen occupies the octahedral interstitial positions 9e in the latter cases. The nitrogen content is higher in the hexagonal phase than in the rhombohedral phase. Optimum magnetic properties were obtained for T A =750 C. Here we found a coercivity μ 0J H c =3.7 T and a good squareness of the demagnetization curve. (orig.)

  10. Boosting quantum annealer performance via sample persistence

    Science.gov (United States)

    Karimi, Hamed; Rosenberg, Gili

    2017-07-01

    We propose a novel method for reducing the number of variables in quadratic unconstrained binary optimization problems, using a quantum annealer (or any sampler) to fix the value of a large portion of the variables to values that have a high probability of being optimal. The resulting problems are usually much easier for the quantum annealer to solve, due to their being smaller and consisting of disconnected components. This approach significantly increases the success rate and number of observations of the best known energy value in samples obtained from the quantum annealer, when compared with calling the quantum annealer without using it, even when using fewer annealing cycles. Use of the method results in a considerable improvement in success metrics even for problems with high-precision couplers and biases, which are more challenging for the quantum annealer to solve. The results are further enhanced by applying the method iteratively and combining it with classical pre-processing. We present results for both Chimera graph-structured problems and embedded problems from a real-world application.

  11. Magnetic and mechanical properties of Cu (75 wt%) – 316L grade stainless steels synthesized by ball milling and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Bholanath, E-mail: bholanath_mondal@yahoo.co.in [Department of Central Scientific Services, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Chabri, Sumit [Department of Metallurgy and Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India); Sardar, Gargi [Department of Zoology, Baruipur College, South 24 Parganas, 743610 (India); Bhowmik, Nandagopal [Department of Metallurgy and Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India); Sinha, Arijit, E-mail: arijitsinha2@yahoo.co.in [School of Materials Science and Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India); Chattopadhyay, Partha Protim [Department of Metallurgy and Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India)

    2015-05-01

    Elemental powders of Cu (75 wt%) and 316-stainless steel (25 wt%) has been subjected to ball milling upto 70 h followed by isothermal annealing at the temperature range of 350–750 °C for 1 h to investigate the microstructural evolution along with magnetic and mechanical properties. After 40 h of milling, the bcc Fe is almost dissolved in the solid solution of Cu but no significant change has been observed in the XRD pattern after 70 h of milling, Annealing of the alloy has resulted in precipitation of nanocrystalline bcc-Fe in Cu which triggers the soft ferromagnetic properties. The extensive mechanical characterization has been done at the microstructural scale by nanoindentation technique which demonstrates a hardening behavior of the compacted and annealed alloys due to possible precipitation of nanocrystalline bcc-Fe in Cu. - Highlights: • Nanocrystalline phases with partial amorphorization obtained after 70 h of milling. • Precipitation and grain coarsening of Fe and Cu after annealing as observed by XRD. • Annealing of the ball milled sample upto 550 {sup o}C has evolved ferromagnetic behavior. • Nanoindentation predicts a hardening behavior of annealed ball milled samples.

  12. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  13. Schroedinger invariant solutions of type IIB with enhanced supersymmetry

    Energy Technology Data Exchange (ETDEWEB)

    Donos, Aristomenis [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Gauntlett, Jerome P. [Imperial College, London (United Kingdom). Theoretical Physics Group; Imperial College, London (United Kingdom). Inst. for Mathematical Sciences

    2009-07-15

    We construct the Killing spinors for a class of supersymmetric solutions of type IIB supergravity that are invariant under the non-relativistic Schroedinger algebra. The solutions depend on a five-dimensional Sasaki- Einstein space and it has been shown that they admit two Killing spinors. Here we will show that, for generic Sasaki-Einstein space, there are special subclasses of solutions which admit six Killing spinors and we determine the corresponding superisometry algebra. We also show that for the special case that the Sasaki-Einstein space is the round five-sphere, the number of Killing spinors can be increased to twelve. (orig.)

  14. An electrochemical analysis of AZ91 Mg alloy processed by plasma electrolytic oxidation followed by static annealing

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Y.G. [School of Materials Science and Engineering, Yeungnam University, 214-1 Dae-Dong, Gyeongsan 712-749, Gyeongbuk (Korea, Republic of); Lee, K.M.; Lee, B.U. [Department of Metallurgy and Materials Engineering, Hanyang University, Ansan 425-791 (Korea, Republic of); Shin, D.H., E-mail: dhshin@hanyang.ac.kr [Department of Metallurgy and Materials Engineering, Hanyang University, Ansan 425-791 (Korea, Republic of)

    2011-06-15

    Research highlights: > The amount of MgO in the oxide film increased with increasing annealing temperature. > The dehydration reaction resulted in the formation of micro-cracks in the oxide film. > Electrochemical response of the PEO-treated sample annealed at 150 deg. C was improved. - Abstract: In this study, the effect of subsequent annealing on the electrochemical response of AZ91 Mg alloy coated via plasma electrolytic oxidation (PEO) was investigated. PEO coating was carried out on the Mg alloy under AC condition in an alkaline silicate electrolyte, and the PEO-coated samples underwent several subsequent annealing treatments at three different temperatures of 100, 150, and 200 deg. C. The surface morphologies of the coating layers were observed via a scanning electron microscope (SEM) and their constituent compounds were characterized by qualitative observation based on X-ray photoelectron spectroscopy (XPS). In addition, the corrosion protection properties of the PEO-coated sample were examined by electrochemical impedance spectroscopy (EIS) in a 3.5 wt% NaCl solution with a focus on exploring the effect of subsequent annealing on the electrochemical response in a quantitative manner. SEM and XPS observations evidenced that the subsequent annealing at temperatures higher than 150 deg. C resulted in significant morphological changes due to the dehydration reaction of Mg(OH){sub 2} to form MgO. Thus, it was found that the sample annealed at 150 deg. C exhibited a better corrosion resistance than the other samples, which were analyzed by taking an equivalent circuit model into account.

  15. Evolution of Structural and Optical Properties of ZnO Nanorods Grown on Vacuum Annealed Seed Crystallites

    Directory of Open Access Journals (Sweden)

    Waqar Khan

    2018-01-01

    Full Text Available In this study, the ambient condition for the as-coated seed layer (SL annealing at 350 °C is varied from air or nitrogen to vacuum to examine the evolution of structural and optical properties of ZnO nanorods (NRs. The NR crystals of high surface density (~240 rods/μm2 and aspect ratio (~20.3 show greatly enhanced (002 degree of orientation and crystalline quality, when grown on the SLs annealed in vacuum, compared to those annealed in air or nitrogen ambient. This is due to the vacuum-annealed SL crystals of a highly preferred orientation toward (002 and large grain sizes. X-ray photoelectron spectroscopy also reveals that the highest O/Zn atomic ratio of 0.89 is obtained in the case of vacuum-annealed SL crystals, which is due to the effective desorption of hydroxyl groups and other contaminants adsorbed on the surface formed during aqueous solution-based growth process. Near band edge emission (ultra violet range of 360–400 nm of the vacuum-annealed SLs is also enhanced by 44% and 33% as compared to those annealed in air and nitrogen ambient, respectively, in photoluminescence with significant suppression of visible light emission associated with deep level transition. Due to this improvement of SL optical crystalline quality, the NR crystals grown on the vacuum-annealed SLs produce ~3 times higher ultra violet emission intensity than the other samples. In summary, it is shown that the ZnO NRs preferentially grow along the wurtzite c-axis direction, thereby producing the high crystalline quality of nanostructures when they grow on the vacuum-annealed SLs of high crystalline quality with minimized impurities and excellent preferred orientation. The ZnO nanostructures of high crystalline quality achieved in this study can be utilized for a wide range of potential device applications such as laser diodes, light-emitting diodes, piezoelectric transducers and generators, gas sensors, and ultraviolet detectors.

  16. Influence of laboratory annealing on tensile properties and design stress intensity limits for Type 304 stainless steel

    International Nuclear Information System (INIS)

    Sikka, V.K.; Booker, M.K.

    1977-01-01

    The influence of reannealing (laboratory annealing) on yield and ultimate tensile strength values of 19 heats of type 304 stainless steel was determined. Most heats were reannealed at 1065 0 C for 0.5 hr. The reannealed properties were used to determine the influence of reannealing on time-independent design stress intensity limits (S/sub m/). The major findings are as follows: 1. Reannealing lowered the 0.2 percent yield strength versus temperature curve by approximately 42 MPa over the range from room temperature to 649 0 C. 2. The estimated S/sub m/ values for reannealed material were 24 to 28 MPa lower than the current code values. 3. Reannealing appears to influence the S/sub m/ value sufficiently to warrant the consideration of separate values of S/sub m/ in Sect. III of the Boiler and Pressure Vessel Code and Code Case 1592 for ''as-received'' and reannealed material

  17. Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

    International Nuclear Information System (INIS)

    Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

    2011-01-01

    We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

  18. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  19. Computational Multiqubit Tunnelling in Programmable Quantum Annealers

    Science.gov (United States)

    2016-08-25

    ARTICLE Received 3 Jun 2015 | Accepted 26 Nov 2015 | Published 7 Jan 2016 Computational multiqubit tunnelling in programmable quantum annealers...state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational ...qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational

  20. Studies on the influence of metallurgical variables on the stress corrosion behavior of AISI 304 stainless steel in sodium chloride solution using the fracture mechanics approach

    International Nuclear Information System (INIS)

    Khatak, H.S.; Gnanamoorthy, J.B.; Rodriguez, P.

    1996-01-01

    Stress corrosion data on a nuclear grade AISI type 304 stainless steel in a boiling solution of 5M NaCl + 0.15M Na 2 SO 4 + 3 mL/L HCl (bp 381 K) for various metallurgical conditions of the steel are presented in this article. The metallurgical conditions used are solution annealing, sensitization, 10 pct cold work, 20 pct cold work, solution annealing + sensitization, 10 pct cold work + sensitization, and 20 pct cold work + sensitization. The fracture mechanics approach has been used to obtain quantitative data on the stress corrosion crack growth rates. The stress intensity factor, K I , and J integral, J I , have been used as evaluation parameters. The crack growth rates have been measured using compact tension type samples under both increasing and decreasing stress intensity factors. A crack growth rate of 5 x 10 -11 m/s was chosen for the determination of threshold parameters. Results of the optical microscopic and fractographic examinations are presented. Acoustic signals were recorded during crack growth. Data generated from acoustic emissions, activation energy measurements, and fractographic features indicate hydrogen embrittlement as the possible mechanism of cracking

  1. Formation of modified TbCu{sub 7} and Th{sub 2}Zn{sub 17} type structures during annealing of mechanical-alloyed Sm-Fe powders

    Energy Technology Data Exchange (ETDEWEB)

    Teresiak, A.; Kubis, M.; Mattern, N.; Wolf, M.; Mueller, K.-H. [Inst. fuer Festkoerper- und Werkstofforschung, Dresden (Germany)

    1998-06-26

    Compounds with the nominal composition near Sm{sub 2}Fe{sub 17} were prepared by mechanical alloying starting from the elemental powders and subsequent annealing at temperatures, T{sub A}, between 600 C and 900 C. For crystal structure investigations of the non-equilibrium phases formed at various temperatures, XRD methods with following Rietveld analysis were applied. For T{sub A} between 600 C and 750 C a modified TbCu{sub 7}-type structure of space group P6/mmm was found, in which the Fe(2c) site is replaced by the partially (1/3) and randomly occupied Fe(6l) site. Its approximate composition is SmFe{sub 8.8-9.0}. For T{sub A} between 800 C to 900 C a disordered modified Th{sub 2}Zn{sub 17} structure (space group R anti 3m) was found that is formed by introducing additional randomly occupied Fe (6c) and Sm(3a) positions, respectively. The degree of order of Sm atoms and Fe-dumbbells along the c-direction increases with increasing T{sub A}. A decrease in the Fe concentration in the cell is observed for increasing T{sub A}. The completely ordered stoichiometric Th{sub 2}Zn{sub 17}-type structure could not be reached by annealing samples prepared from the ball-milled elemental powders. (orig.) 20 refs.

  2. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  3. Global warming: Temperature estimation in annealers

    Directory of Open Access Journals (Sweden)

    Jack Raymond

    2016-11-01

    Full Text Available Sampling from a Boltzmann distribution is NP-hard and so requires heuristic approaches. Quantum annealing is one promising candidate. The failure of annealing dynamics to equilibrate on practical time scales is a well understood limitation, but does not always prevent a heuristically useful distribution from being generated. In this paper we evaluate several methods for determining a useful operational temperature range for annealers. We show that, even where distributions deviate from the Boltzmann distribution due to ergodicity breaking, these estimates can be useful. We introduce the concepts of local and global temperatures that are captured by different estimation methods. We argue that for practical application it often makes sense to analyze annealers that are subject to post-processing in order to isolate the macroscopic distribution deviations that are a practical barrier to their application.

  4. Effect of cold works on creep-rupture life of type 316LN stainless steel

    International Nuclear Information System (INIS)

    Kim, W. G.; Han, C. H.; Ryu, W. S.

    2003-01-01

    Effect of cold works on creep-rupture life of the cold-worked type 316LN stainless steels, which are fabricated with the various reductions ; 0%(solution annealing), 20%, 30%, 40%, and 50%, was investigated. The creep-rupture time increased gradually up to 30% reduction, but it decreased inversely over 30% reduction. The longest rupture time exhibited at cold-worked reduction of 30%. The reason for this is that fine carbide precipitates are uniformly generated in grain boundary and the dislocations are pinned in the precipitates and the dislocations are sustained for a long time at high temperature. However, it is assumed that the higher cold-work reductions over 30% lead to excessive generation of deformation faults. The SEM fractrographs of the cold-worked specimens showed dense fracture micrographs, and they did not show intergranular structures in creep fracture mode. From this result, it is believed that the cold-worked specimens were superior in creep-rupture time to solution annealed ones

  5. Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation

    International Nuclear Information System (INIS)

    Liang, J.H.; Sang, Y.J.; Wang, C.-H.; Wang, T.W.; Hsu, J.Y.; Niu, H.; Tseng, M.S.

    2005-01-01

    This study examines the post-annealing-dependent behaviors of the shallow junction produced by implanting 10 15 cm -2 20 keV BGe ions into n-type silicon specimens. Post-annealing treatments consisted of one- and two-step annealing including both furnace annealing (FA) and rapid thermal annealing (RTA). Comparison of the one-step FA at 550 deg. C and the one-step RTA at 1050 deg. C revealed that boron depth profiles were slightly diffused in the former but exhibited considerable transient-enhanced diffusion (TED) in the latter. However, both the one-step FA- and RTA-annealed germanium depth profiles barely diffused, while the latter diffusing slightly deeper than the former. The optimum value of junction depth (x j ) times sheet resistance (R s ) was obtained with one-step FA at 550 deg. C for 1 h. The two-step annealing (FA at 550 deg. C and RTA at 1050 deg. C) results showed that the RTA-induced TED in the boron depth profiles could be effectively retarded only when FA took place for more than 3 h. Again, germanium depth profiles are also barely diffused while the corresponding TEDs were larger than those in one-step FA but smaller than those in one-step RTA. Furthermore, the two-step annealing of FA at 550 deg. C for 3 h followed by RTA at 1050 deg. C for 30 s is suggested when attempting to obtain an optimum value of x j R s

  6. Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films

    International Nuclear Information System (INIS)

    Adam, Thomas; Loubet, Nicolas; Reznicek, Alexander; Paruchuri, Vamsi; Sampson, Ron; Sadana, Devendra

    2012-01-01

    The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-10 20 cm -3 . It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments.

  7. Texture development in Al-Mg alloys during high temperature annealing

    International Nuclear Information System (INIS)

    Saitou, T.; Inagaki, H.

    2001-01-01

    To clarify the effect of Mg content on annealing textures developed in Al-Mg alloys during high temperature annealing, Al-Mg alloys containing up to 9 wt.% Mg in supersaturated solid solution were cold rolled 95% and isothermally annealed at 450 C. Their textures were investigated with the orientation distribution function analysis. It was found that, in the recrystallization textures observed at complete recrystallization, addition of more than 1 wt.% Mg was sufficient to suppress the development of {100} left angle 001 right angle. With increasing Mg content, {100} left angle 001 right angle decreased remarkably, whereas {100} left angle 013 right angle and {103} left angle 321 right angle increased. Thus, {100} left angle 013 right angle and {103} left angle 321 right angle were found to be the main orientations of the recrystallization textures of Al-Mg alloys annealed at high temperatures. {100} left angle 013 right angle developed most remarkably at 4 wt.% Mg, while {103} left angle 321 right angle showed the maximum development at 7 wt.% Mg. During subsequent grain growth at 450 C, remarkable texture changes were observed only in the alloys containing Mg in the range between 2 and 4 wt.%. In these alloys, {100} left angle 013 right angle developed at the expense of {100} left angle 001 right angle at earlier stages of grain growth, whereas {103} left angle 321 right angle increased independently of these two orientations at later stages of grain growth. Reflecting these texture changes, grain growth occurred in these alloys discontinuously. Such a discontinuous grain growth with large texture changes is expected, if strong textures are already present before grain growth, and if recrystallized grains having similar orientations are distributed by forming large clusters before grain growth. (orig.)

  8. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  9. ANALYSIS AND PERFORMANCE MEASUREMENT OF EXISTING SOLUTION METHODS OF QUADRATIC ASSIGNMENT PROBLEM

    Directory of Open Access Journals (Sweden)

    Morteza KARAMI

    2014-01-01

    Full Text Available Quadratic Assignment Problem (QAP is known as one of the most difficult combinatorial optimization problems that is classified in the category of NP-hard problems. Quadratic Assignment Problem Library (QAPLIB is a full database of QAPs which contains several problems from different authors and different sizes. Many exact and meta-heuristic solution methods have been introduced to solve QAP. In this study we focus on previously introduced solution methods of QAP e.g. Branch and Bound (B&B, Simulated Annealing (SA Algorithm, Greedy Randomized Adaptive Search Procedure (GRASP for dense and sparse QAPs. The codes of FORTRAN for these methods were downloaded from QAPLIB. All problems of QAPLIB were solved by the abovementioned methods. Several results were obtained from the computational experiments part. The Results show that the Branch and Bound method is able to introduce a feasible solution for all problems while Simulated Annealing Algorithm and GRASP methods are not able to find any solution for some problems. On the other hand, Simulated Annealing and GRASP methods have shorter run time comparing to the Branch and Bound method. In addition, the performance of the methods on the objective function value is discussed.

  10. Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing.

    Science.gov (United States)

    Pavlyk, Bohdan; Kushlyk, Markiyan; Slobodzyan, Dmytro

    2017-12-01

    Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 10 4  cm -2 ) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers.

  11. Influence of nitrogenation on structure development and magnetic properties of mechanically alloyed and annealed Sm-Fe powders

    Energy Technology Data Exchange (ETDEWEB)

    Teresiak, A.; Kubis, M.; Mattern, N.; Wolf, M.; Gruner, W.; Mueller, K.-H. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany)

    1999-11-15

    Sm-Fe-N compounds were prepared by mechanical alloying, subsequent annealing and nitrogenation. For crystal structure investigations of the non-equilibrium phases Sm{sub 2}Fe{sub 17+y}N{sub x}, formed at various annealing temperatures T{sub A} for 1 h, X-ray diffraction with following Rietveld analysis was used. A volume expansion of 6.2% was observed after nitrogenation. As for the non-nitrided Sm-Fe alloys a modified TbCu{sub 7}-type structure (space group P6/mmm) and a modified Th{sub 2}Zn{sub 17}-type structure (space group R anti 3m) have been observed. However, for nitrogenated Sm-Fe samples the modified Th{sub 2}Zn{sub 17}-type structure forms already for annealing at T{sub A}=750 C prior to nitrogenation. For samples annealed, prior to nitrogenation, between T{sub A}=600 and 700 C the modified TbCu{sub 7}-type structure was found, in which the nitrogen occupies randomly the 3f position with an occupancy larger than 1/3. The partially ordered, modified Th{sub 2}Zn{sub 17}-type structure formed for 750 Ctype structure by introducing additional Fe(6c) and Sm(3a) positions. The degree of order of the Sm atoms and Fe-dumbbells increases with increasing T{sub A}. The nitrogen occupies the octahedral interstitial positions 9e in the latter cases. The nitrogen content is higher in the hexagonal phase than in the rhombohedral phase. Optimum magnetic properties were obtained for T{sub A}=750 C. Here we found a coercivity {mu}{sub 0J}H{sub c}=3.7 T and a good squareness of the demagnetization curve. (orig.)

  12. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  13. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D N; Prawer, S; Gonon, P; Walker, R; Dooley, S; Bettiol, A; Pearce, J [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  14. Nuclear techniques of analysis in diamond synthesis and annealing

    International Nuclear Information System (INIS)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J.

    1996-01-01

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs

  15. Influence of annealing time on pH sensitivity of ZnO sensing membrane for EGFET sensor

    Science.gov (United States)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2018-05-01

    Solid-state materials have becomes essential in recent technological advancements. This study also utilized solid-state material but in form of thin films to sense hydrogen ions in solutions. Fabrication of ZnO thin film was done using sol-gel spin coating technique. In an attempt to increase the pH sensitivity of the produced film, prolonging of annealing time was done. It was found that the increase in annealing time from 15 minutes to 30 minutes had managed to improve the sensitivity by 4.35%. The optimum pH sensitivity and linearity obtained in this study is 50.40 mV/pH and 0.9911 respectively.

  16. Annealing dislocation loops in OKh16N15M3T steel implanted by helium

    International Nuclear Information System (INIS)

    Utkelbaev, B.D.; Reutov, V.F.; Zhdan, G.T.

    1993-01-01

    With the use of electron microscopy a study was made into the influence of preliminary thermomechanical treatment on the process of dislocation loop development in austenitic stainless steel type OKh16N15M3T with helium on annealing. Preliminary treatment was shown to prevent dislocation loop formation to a greater or lesser extent. Preliminary 'cold' working and thermal ageing of the material are the most effective ways to suppress radiation defect formation when annealing helium implanted steel

  17. Effect of post annealing treatment on electrochromic properties of spray deposited niobium oxide thin films

    International Nuclear Information System (INIS)

    Mujawar, S.H.; Inamdar, A.I.; Betty, C.A.; Ganesan, V.; Patil, P.S.

    2007-01-01

    Niobium oxide thin films were deposited on the glass and fluorine doped tin oxide (FTO) coated glass substrates using simple and inexpensive spray pyrolysis technique. During deposition of the films various process parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain well adherent and transparent films. The films prepared were further annealed and effect of post annealing on the structural, morphological, optical and electrochromic properties was studied. Structural and morphological characterizations of the films were carried out using scanning electron microscopy, atomic force microscopy and X-ray diffraction techniques. Electrochemical properties of the niobium oxide thin films were studied by using cyclic-voltammetry, chronoamperometry and chronocoulometry

  18. Effects of annealing on the compositional heterogeneity and structure in zirconium-based bulk metallic glass thin films

    International Nuclear Information System (INIS)

    He, L.; Chu, J.P.; Li, C.-L.; Lee, C.-M.; Chen, Y.-C.; Liaw, P.K.; Voyles, P.M.

    2014-01-01

    In-situ heating fluctuation electron microscopy and scanning transmission electron microscopy have been utilized to study compositional and structural heterogeneities in Zr 51 Cu 32 Al 9 Ni 8 thin films upon annealing. Composition fluctuations are present in the as-deposited thin films. Well below the glass transition temperature, the composition fluctuations increase with annealing time. Short- and medium-range order also change with annealing temperature. The observed heterogeneities in the glass structure persist until annealing causes crystallization. The 20 nm thick Zr 51 Cu 32 Al 9 Ni 8 films contain oxide layers both at the surface and the film/substrate interface with the total thickness of 7–8 nm. In-situ annealing increased the oxygen content of the whole films to about 24 wt.% after 2 h at 400 °C. - Highlights: • Zr 51 Cu 32 Al 9 Ni 8 thin films were studied with in-situ heating electron microscopy. • Annealing at 400 °C increases the Zr and Cu compositional fluctuations. • Short-range order in Zr 51 Cu 32 Al 9 Ni 8 becomes less homogeneous above 350 °C. • Medium-range order changes in degree and types at 400 °C, well below T g . • Annealing increases composition and structure heterogeneities until crystallization

  19. Mechanical properties and annealing texture of zirconium sheets

    International Nuclear Information System (INIS)

    Hanif-ur-Rehman; Khawaja, F.A.

    1996-01-01

    Mechanical properties like yield strength (YS), ultimate tensile strength(UTS), percentage elongation and annealing texture has been studied in sheets of commercially pure zirconium. The YS and UTS decrease as a function of annealing temperature up to 600 V, but both quantities have maximum value in sample annealed at 800 deg. C. The percentage elongation decreased with increase in annealing temperature up to 600 deg. C. A slight decrease and minimum value of percentage elongation was observed at 650 and 800 C respectively. The texture development in the annealed samples has been studied by the X-ray diffraction method. The sampled annealed at 800 deg. C showed a texture component (0001) [01 bar 10] with orientation density of about 8 times random, while the samples annealed at 600,650 and 700 deg. C showed a texture component (0001)[2 bar 110] with orientation density of about 5 times random. Thus it is concluded, that the texture component (0001)[2 bar 110] and (0001)[01 bar 10] at 650 and 800 geg. C respectively, may be the responsible for the increase in YS and UTS and decrease in percentage elongation at these temperatures. (author)

  20. Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

    Science.gov (United States)

    Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

    2018-04-01

    A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

  1. Annealing of KDP crystals in vacuum and under pressure

    International Nuclear Information System (INIS)

    Pritula, I.M.; Kolybayeva, M.I.; Salo, V.I.

    1997-01-01

    The effect of the high temperature annealing (T an > 230 degrees C) on the absorption spectra and laser damage threshold of KDP crystals was studied in the present paper. The experiments on isotermal annealing were performed under pressure in the atmosphere with specific properties. The composition of the atmosphere was selected to be chose to that of the desorbing gas component determined during annealing in vacuum. The mentioned conditions allowed to conduct annealing in the temperature range of 230 - 280 degrees C without degradation of the sample. The variations in the absorption spectra showed that the effect of the annealing is most strongly revealed in the short - wave region of the spectrum (λ -1 before and k=0.12 cm -1 after annealing) demonstrate that at temperatures ∼ 230 - 280 degrees C the processes ensuring the improvement of the structure quality are stimulated in the volume of the crystals: (a) before the annealing laser damage threshold was 1.5 10 11 W/cm 2 ; (b) after the annealing (t = 280 degrees C) it became 4 10 11 W/cm 2

  2. Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Sebastian; Brueggemann, R. [Institut fuer Physik, Carl von Ossietzky Universitaet Oldenburg, 26111 Oldenburg (Germany); Kirilov, Kiril [Department of Solid State Physics and Microelectronics, Sofia Univ. (Bulgaria); Levi, Zelma; Manolov, E. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Nedev, N. [Instituto de Ingenieria Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California, Mexico (Mexico)

    2007-07-01

    Silicon nanocrystals embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 1000 C in N{sub 2} atmosphere for 30 or 60 min. High frequency C-V measurements demonstrate that both types of sample can be charged negatively or positively by applying a positive or negative bias voltage to the gate. The clockwise hysteresis windows of 30 and 60 min annealed samples are about 7 and 5.5 V for the {+-}12 V scanning range (E{sub ox}={+-}2.4 MV/cm), respectively. Although the samples annealed for 60 min have a smaller hysteresis window, they have two important advantages compared to the 30 min annealed ones: a lower defect density at the c-Si wafer/SiO{sub 2} interface and a smaller value of the fixed oxide charge close to this interface.

  3. Selective molecular annealing: in situ small angle X-ray scattering study of microwave-assisted annealing of block copolymers.

    Science.gov (United States)

    Toolan, Daniel T W; Adlington, Kevin; Isakova, Anna; Kalamiotis, Alexis; Mokarian-Tabari, Parvaneh; Dimitrakis, Georgios; Dodds, Christopher; Arnold, Thomas; Terrill, Nick J; Bras, Wim; Hermida Merino, Daniel; Topham, Paul D; Irvine, Derek J; Howse, Jonathan R

    2017-08-09

    Microwave annealing has emerged as an alternative to traditional thermal annealing approaches for optimising block copolymer self-assembly. A novel sample environment enabling small angle X-ray scattering to be performed in situ during microwave annealing is demonstrated, which has enabled, for the first time, the direct study of the effects of microwave annealing upon the self-assembly behavior of a model, commercial triblock copolymer system [polystyrene-block-poly(ethylene-co-butylene)-block-polystyrene]. Results show that the block copolymer is a poor microwave absorber, resulting in no change in the block copolymer morphology upon application of microwave energy. The block copolymer species may only indirectly interact with the microwave energy when a small molecule microwave-interactive species [diethylene glycol dibenzoate (DEGDB)] is incorporated directly into the polymer matrix. Then significant morphological development is observed at DEGDB loadings ≥6 wt%. Through spatial localisation of the microwave-interactive species, we demonstrate targeted annealing of specific regions of a multi-component system, opening routes for the development of "smart" manufacturing methodologies.

  4. The effect of electrochemical CO annealing on platinum–cobalt nanoparticles in acid medium and their correlation to the oxygen reduction reaction

    International Nuclear Information System (INIS)

    Ciapina, Eduardo G.; Ticianelli, Edson A.

    2011-01-01

    Highlights: ► Modification of the surface properties of Pt 3 Co/C electrocatalyst. ► Electrochemical CO annealing in acid media generated a Pt-rich surface. ► In situ XAS revealed modifications in the Pt 5d band occupancy after CO annealing. ► The CO-annealed sample exhibited stronger interaction with oxygenated species. ► Increased Pt utilization in the CO-annealed Pt 3 Co/C electrocatalyst. - Abstract: This paper describes a modification of the surface properties of a carbon-supported Pt 3 Co catalyst resulting from an electrochemical cycling treatment in a 0.1 M HClO 4 and in a CO-saturated 0.1 M HClO 4 solution (electrochemical CO-annealing). The procedure generated a Pt-rich surface with electrochemical properties different from that presented by the as-received (untreated) sample. This was evidenced by a shift in the CO stripping peak to more positive potentials in the CO stripping voltammetry, and by an increased charge of H upd region and a modification of the oxide reduction peak observed in the base cyclic voltammogram. In situ X-ray absorption spectroscopy experiments conducted in the dispersive mode revealed differences in the electronic 5d band occupancy after the CO annealing, whereas the behavior of the intensity of the white-line as function of the potential for this material approached that found for pure Pt/C nanoparticles, in contrast to the small potential dependence profile exhibited by the as-received Pt 3 Co nanoparticles. Mass activities towards the oxygen reduction reaction measured by rotating disk experiments carried out at 1600 rpm in a O 2 -saturated solution at 25 °C increased from 0.10 A/mg of Pt to 0.19 A/mg of Pt, evidencing the higher Pt utilization in the CO-annealed Pt 3 Co/C electrocatalyst. The origin of the different electrochemical behavior is discussed.

  5. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

  6. Densification effects on solution-processed indium-gallium-zinc-oxide films and their thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Rim, You Seung; Kim, Hyun Jae [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2014-09-15

    We report the effects of high-pressure annealing (HPA) on solution-processed InGaZnO (IGZO) thin-film transistors (TFTs). HPA increased the density of IGZO films. In particular, annealing in O{sub 2} at 1.0 MPa and 350 C resulted in a high-density and low-porosity IGZO film, as characterized using X-ray reflectivity (XRR) and ellipsometry measurements. This was attributed to the oxidative and compressive effects on the oxygen-deficient solution-processed IGZO film. TFTs annealed in O{sub 2} at 1.0 MPa and 350 C exhibited an increase in the field-effect mobility by a factor of approximately five compared with TFTs annealed in air at 0.1 MPa and 350 C. Furthermore, improvements in reliability under negative and positive bias stresses were also observed following HPA. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. On a new solution of Chew-Low type equations

    International Nuclear Information System (INIS)

    Rerikh, K.V.

    1985-01-01

    The system is investigated of Chew-Low type equations, defined by the crossing symmetry matrix A(1, 1) for S-matrix elements as dfunctions of the uniformmizing variable w, in terms of which this system is a system of nonlinear difference equations. The quadratic Cremona transformation for unknown functions reducing the initial equations to a vey simple form is found. New particular solutions are obtained as functions of variable exp(cw). Existence of the new first integral γ(w) that is an even periodical function of w is estalished. The structure of the general solution depending on γ(w) and the relation of the found particular solutions with the first integral are discussed

  8. Reinforced glass beams composed of annealed, heat-strengthened and fully tempered glass

    NARCIS (Netherlands)

    Louter, P.C.; Belis, J.L.I.F.; Bos, F.P.; Veer, F.A.

    Annealed, heat-strengthened and fully tempered SG-laminated reinforced glass beam specimens were subjected to four-point bending tests to investigate the effects of glass type on their structural response. During the test the beams showed linear elastic response until initial glass failure, followed

  9. Temperature distribution study in flash-annealed amorphous ribbons

    International Nuclear Information System (INIS)

    Moron, C.; Garcia, A.; Carracedo, M.T.

    2003-01-01

    Negative magnetrostrictive amorphous ribbons have been locally current annealed with currents from 1 to 8 A and annealing times from 14 ms to 200 s. In order to obtain information about the sample temperature during flash or current annealing, a study of the temperature dispersion during annealing in amorphous ribbons was made. The local temperature variation was obtained by measuring the local intensity of the infrared emission of the sample with a CCD liquid nitrogen cooled camera. A distribution of local temperature has been found in spite of the small dimension of the sample

  10. Solutions of the finite type of Sine-Gordon equation

    International Nuclear Information System (INIS)

    Zhao Guosong

    1998-01-01

    We use the technique of differential geometry to prove that the solutions of finite type of the sine-Gordon equation φ xx - φ yy = sin φ cosφ can be obtained from a system of ordinary differential equations

  11. A simulated annealing approach for redesigning a warehouse network problem

    Science.gov (United States)

    Khairuddin, Rozieana; Marlizawati Zainuddin, Zaitul; Jiun, Gan Jia

    2017-09-01

    Now a day, several companies consider downsizing their distribution networks in ways that involve consolidation or phase-out of some of their current warehousing facilities due to the increasing competition, mounting cost pressure and taking advantage on the economies of scale. Consequently, the changes on economic situation after a certain period of time require an adjustment on the network model in order to get the optimal cost under the current economic conditions. This paper aimed to develop a mixed-integer linear programming model for a two-echelon warehouse network redesign problem with capacitated plant and uncapacitated warehouses. The main contribution of this study is considering capacity constraint for existing warehouses. A Simulated Annealing algorithm is proposed to tackle with the proposed model. The numerical solution showed the model and method of solution proposed was practical.

  12. Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

    International Nuclear Information System (INIS)

    Xu, Yun-bo; Hu, Zhi-ping; Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing; Ma, De-gang; Misra, R.D.K.

    2017-01-01

    The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

  13. Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yun-bo [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Hu, Zhi-ping, E-mail: huzhiping900401@126.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Ma, De-gang [Tangshan Iron and Steel Company, Tangshan 063000, People' s Republic China (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States)

    2017-03-14

    The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

  14. Algebraic Traveling Wave Solutions of a Non-local Hydrodynamic-type Model

    International Nuclear Information System (INIS)

    Chen, Aiyong; Zhu, Wenjing; Qiao, Zhijun; Huang, Wentao

    2014-01-01

    In this paper we consider the algebraic traveling wave solutions of a non-local hydrodynamic-type model. It is shown that algebraic traveling wave solutions exist if and only if an associated first order ordinary differential system has invariant algebraic curve. The dynamical behavior of the associated ordinary differential system is analyzed. Phase portraits of the associated ordinary differential system is provided under various parameter conditions. Moreover, we classify algebraic traveling wave solutions of the model. Some explicit formulas of smooth solitary wave and cuspon solutions are obtained

  15. Atom Probe Tomography Characterization of the Solute Distributions in a Neutron-Irradiated and Annealed Pressure Vessel Steel Weld

    Energy Technology Data Exchange (ETDEWEB)

    Miller, M.K.

    2001-01-30

    A combined atom probe tomography and atom probe field ion microscopy study has been performed on a submerged arc weld irradiated to high fluence in the Heavy-Section Steel irradiation (HSSI) fifth irradiation series (Weld 73W). The composition of this weld is Fe - 0.27 at. % Cu, 1.58% Mn, 0.57% Ni, 0.34% MO, 0.27% Cr, 0.58% Si, 0.003% V, 0.45% C, 0.009% P, and 0.009% S. The material was examined after five conditions: after a typical stress relief treatment of 40 h at 607 C, after neutron irradiation to a fluence of 2 x 10{sup 23} n m{sup {minus}2} (E > 1 MeV), and after irradiation and isothermal anneals of 0.5, 1, and 168 h at 454 C. This report describes the matrix composition and the size, composition, and number density of the ultrafine copper-enriched precipitates that formed under neutron irradiation and the change in these parameters with post-irradiation annealing treatments.

  16. CdO thin films based on the annealing temperature differences prepared by sol-gel method and their heterojunction devices

    Science.gov (United States)

    Soylu, M.; Yazici, T.

    2017-12-01

    Undoped CdO films were prepared on glass substrate and p-type silicon wafer using sol-gel spin coating method. The structural and optical properties of the films were investigated as a function of the annealing temperature. X-ray diffraction (XRD) patterns reveal that the films are formed from CdO with cubic crystal structure and (1 1 1) preferred orientation. It is seen that good crystallinity is due to the high annealing temperature. The surface morphology of the CdO films was found to be depending on the annealing temperature, showing cauliflower like structure. Optical band gaps for annealing temperature of 250 °C and 450 °C were found to be 2.49 eV and 2.27 eV, respectively, showing a decrease with raising temperature. Optics parameters such as extinction coefficient, refractive index, and surface-volume energy loss were determined with spectrophotometric analysis as a function of annealing temperature. CdO/p-Si heterojunction structure showed weak rectifying behavior. The diode parameters were found to be depending on annealing temperature. The results are encouraging to get better conjunction with CdO thin film component at optimize annealing temperature.

  17. First application of quantum annealing to IMRT beamlet intensity optimization

    International Nuclear Information System (INIS)

    Nazareth, Daryl P; Spaans, Jason D

    2015-01-01

    Optimization methods are critical to radiation therapy. A new technology, quantum annealing (QA), employs novel hardware and software techniques to address various discrete optimization problems in many fields. We report on the first application of quantum annealing to the process of beamlet intensity optimization for IMRT.We apply recently-developed hardware which natively exploits quantum mechanical effects for improved optimization. The new algorithm, called QA, is most similar to simulated annealing, but relies on natural processes to directly minimize a system’s free energy. A simple quantum system is slowly evolved into a classical system representing the objective function. If the evolution is sufficiently slow, there are probabilistic guarantees that a global minimum will be located.To apply QA to IMRT-type optimization, two prostate cases were considered. A reduced number of beamlets were employed, due to the current QA hardware limitations. The beamlet dose matrices were computed using CERR and an objective function was defined based on typical clinical constraints, including dose-volume objectives, which result in a complex non-convex search space. The objective function was discretized and the QA method was compared to two standard optimization methods, simulated annealing and Tabu search, run on a conventional computing cluster.Based on several runs, the average final objective function value achieved by the QA was 16.9 for the first patient, compared with 10.0 for Tabu and 6.7 for the simulated annealing (SA) method. For the second patient, the values were 70.7 for the QA, 120.0 for Tabu and 22.9 for the SA. The QA algorithm required 27–38% of the time required by the other two methods.In this first application of hardware-enabled QA to IMRT optimization, its performance is comparable to Tabu search, but less effective than the SA in terms of final objective function values. However, its speed was 3–4 times faster than the other two methods

  18. Plasticity margin recovery during annealing after cold deformation

    International Nuclear Information System (INIS)

    Bogatov, A.A.; Smirnov, S.V.; Kolmogorov, V.L.

    1978-01-01

    Restoration of the plasticity margin in steel 20 after cold deformation and annealing at 550 - 750 C and soaking for 5 - 300 min was investigated. The conditions of cold deformation under which the metal acquires microdefects unhealed by subsequent annealing were determined. It was established that if the degree of utilization of the plasticity margin is psi < 0.5, the plasticity margin in steel 20 can be completely restored by annealing. A mathematical model of restoration of the plasticity margin by annealing after cold deformation was constructed. A statistical analysis showed good agreement between model and experiment

  19. On the sharp front-type solution of the Nagumo equation with ...

    Indian Academy of Sciences (India)

    One of the methods is to solve the travelling wave equations and compute an exact solution which describes the sharp travelling wavefront. The second method is to solve numer- ically an initial-moving boundary-value problem for the partial differential equation and obtain an approximation for this sharp front-type solution.

  20. The influence of annealing on manganese implanted GaAs films

    International Nuclear Information System (INIS)

    Buerger, Danilo; Zhou, Shengqiang; Grenzer, Joerg; Reuther, Helfried; Anwand, Wolfgang; Gottschalch, Volker; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic semiconductor was obtained by pulsed laser annealing. However, post-implantation annealing can lead to the formation of secondary phases. In order to compare the post-annealing effect, we investigate GaMnAs by implanting up to 6 at% Mn followed by rapid thermal and flashlamp annealing. The structural properties were probed by high resolution X-ray diffraction. The magnetic properties were determined by SQUID measurements. Auger electron spectroscopy has been used to profile the depth distribution of Mn in GaAs after implantation and annealing. We elucidate after implantation a loss of As and that during rapid thermal annealing most of the Mn diffuses towards the surface. Flash lamp annealing prevents out-diffusion, but the recrystallisation efficiency is low. Only the flash lamp annealed samples reveal weak ferromagnetism.

  1. Application of annealing for extension of WWER vessel lives

    International Nuclear Information System (INIS)

    Badanin, V.; Dragunow, Yu.G.; Fedorov, V.; Gorynin, I.; Nickolaev, V.

    1992-01-01

    The safe operation of nuclear power plants (NPP) is dependent upon the assurance that the reactor pressure vessel will not fail in a brittle manner when the effects of radiation embrittlement are taken into account. The recovery of the properties of the irradiated materials is an important way of extending the operating life of a reactor vessel. The intent of this paper is to demonstrate the efficiency of thermal annealing for the recovery of reactor vessel material properties and to present the implications for extended service life. In order to substantiate the application of annealing to the extensior of the service life of vessels, detailed investigations were conducted which involved thermal annealing temperature and time, fast neutron fluence, and metallurgical factors (i.e. impurity contents) on the recovery of properties after the annealing of irradiated materials. Similar studies were continued to determine predictive methods for radiation embrittlement after repeated annealings. In May 1987 the first pilot annealing of a commercial reactor vessel (Novo-Voronezhskaya, III, NPP) was performed. The development of the annealing equipment and investigations performed to test the annealing process proved successful, and an improved safe operation for the reactor vessel was thus atttained providing for an extended service life. (orig.)

  2. Optical scattering characteristic of annealed niobium oxide films

    International Nuclear Information System (INIS)

    Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

    2005-01-01

    Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

  3. Thermal Annealing Effect on Structural, Morphological, and Sensor Performance of PANI-Ag-Fe Based Electrochemical E. coli Sensor for Environmental Monitoring

    Directory of Open Access Journals (Sweden)

    Norshafadzila Mohammad Naim

    2015-01-01

    Full Text Available PANI-Ag-Fe nanocomposite thin films based electrochemical E. coli sensor was developed with thermal annealing. PANI-Ag-Fe nanocomposite thin films were prepared by oxidative polymerization of aniline and the reduction process of Ag-Fe bimetallic compound with the presence of nitric acid and PVA. The films were deposited on glass substrate using spin-coating technique before they were annealed at 300°C. The films were characterized using XRD, UV-Vis spectroscopy, and FESEM to study the structural and morphological properties. The electrochemical sensor performance was conducted using I-V measurement electrochemical impedance spectroscopy (EIS. The sensitivity upon the presence of E. coli was measured in clean water and E. coli solution. From XRD analysis, the crystallite sizes were found to become larger for the samples after annealing. UV-Vis absorption bands for samples before and after annealing show maximum absorbance peaks at around 422 nm–424 nm and 426 nm–464 nm, respectively. FESEM images show the diameter size for nanospherical Ag-Fe alloy particles increases after annealing. The sensor performance of PANI-Ag-Fe nanocomposite thin films upon E. coli cells in liquid medium indicates the sensitivity increases after annealing.

  4. Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Science.gov (United States)

    Esakky, Papanasam; Kailath, Binsu J.

    2017-08-01

    HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

  5. Conventional treatment planning optimization using simulated annealing

    International Nuclear Information System (INIS)

    Morrill, S.M.; Langer, M.; Lane, R.G.

    1995-01-01

    Purpose: Simulated annealing (SA) allows for the implementation of realistic biological and clinical cost functions into treatment plan optimization. However, a drawback to the clinical implementation of SA optimization is that large numbers of beams appear in the final solution, some with insignificant weights, preventing the delivery of these optimized plans using conventional (limited to a few coplanar beams) radiation therapy. A preliminary study suggested two promising algorithms for restricting the number of beam weights. The purpose of this investigation was to compare these two algorithms using our current SA algorithm with the aim of producing a algorithm to allow clinically useful radiation therapy treatment planning optimization. Method: Our current SA algorithm, Variable Stepsize Generalized Simulated Annealing (VSGSA) was modified with two algorithms to restrict the number of beam weights in the final solution. The first algorithm selected combinations of a fixed number of beams from the complete solution space at each iterative step of the optimization process. The second reduced the allowed number of beams by a factor of two at periodic steps during the optimization process until only the specified number of beams remained. Results of optimization of beam weights and angles using these algorithms were compared using a standard cadre of abdominal cases. The solution space was defined as a set of 36 custom-shaped open and wedged-filtered fields at 10 deg. increments with a target constant target volume margin of 1.2 cm. For each case a clinically-accepted cost function, minimum tumor dose was maximized subject to a set of normal tissue binary dose-volume constraints. For this study, the optimized plan was restricted to four (4) fields suitable for delivery with conventional therapy equipment. Results: The table gives the mean value of the minimum target dose obtained for each algorithm averaged over 5 different runs and the comparable manual treatment

  6. Salt type and concentration affect the viscoelasticity of polyelectrolyte solutions

    Science.gov (United States)

    Turkoz, Emre; Perazzo, Antonio; Arnold, Craig B.; Stone, Howard A.

    2018-05-01

    The addition of small amounts of xanthan gum to water yields viscoelastic solutions. In this letter, we show that the viscoelasticity of aqueous xanthan gum solutions can be tuned by different types of salts. In particular, we find that the decrease in viscoelasticity not only depends, as is known, on the salt concentration, but also is affected by the counterion ionic radius and the valence of the salt.

  7. The preliminary results of the thermal annealing processes performed on the RPVs NPP V-1 in Jaslovske Bohunice

    Energy Technology Data Exchange (ETDEWEB)

    Kupca, L; Brezina, M; Beno, P [Vyskumny Ustav Jadrovych Elektrarni, Trnava (Slovakia)

    1994-12-31

    Samples of weld and base metal above and below the weld were taken from RPV material in the V-230 type NPP V-1 in Bohunice; hardness measurements were carried out across the weld on the external surface of the RPV under the thermal shielding, before and after annealing. Results are presented and the annealing procedure efficiency is discussed. (authors). 13 refs., 5 figs.

  8. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2010-01-01

    and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

  9. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  10. Supersymmetric AdS6 solutions of type IIB supergravity

    International Nuclear Information System (INIS)

    Kim, Hyojoong; Kim, Nakwoo; Suh, Minwoo

    2015-01-01

    We study the general requirement for supersymmetric AdS 6 solutions in type IIB supergravity. We employ the Killing spinor technique and study the differential and algebraic relations among various Killing spinor bilinears to find the canonical form of the solutions. Our result agrees precisely with the work of Apruzzi et al. (JHEP 1411:099, 2014), which used the pure spinor technique. Hoping to identify the geometry of the problem, we also computed four-dimensional theory through the dimensional reduction of type IIB supergravity on AdS 6 . This effective action is essentially a non-linear sigma model with five scalar fields parametrizing SL(3,ℝ)/SO(2,1), modified by a scalar potential and coupled to Einstein gravity in Euclidean signature. We argue that the scalar potential can be explained by a subgroup CSO(1,1,1) ⊂SL(3,ℝ) in a way analogous to gauged supergravity

  11. An in situ study of the annealing behaviour of BiSCCO Ag tapes

    DEFF Research Database (Denmark)

    Frello, T.; Poulsen, H.F.; Andersen, L.G.

    1999-01-01

    The phase transformations and structural changes occurring during initial heating and annealing of an Ag-clad high-T-c superconducting tape of the (Bi, Pb)(2)Sr2Ca2Cu3Ox type are investigated. The annealing takes place in air at an operating temperature of 835 degrees C. Using x-ray diffraction...... continuously. We interpret these results as being related to a temperature-dependent solubility limit of Pb in 2212, leading to a substantial grain growth of the phase. Above 812 degrees C 2212 partly decomposes to form (Ca, Sr)(2)CuO3 and a liquid. At the operating temperature 2212 and (Ca, Sr)(2)CuO3 react...... the annealing the 2212 linewidth is constant, implying that there is neither strain nor finite-size broadening of the 2212 peaks during the transformation. This points to a transformation mechanism where only a few 2212 grains transform at a given time. Implications of these findings are discussed in relation...

  12. Annealing of radiation damage in 0.1- and 2-ohm-centimeter Silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1979-01-01

    Isochronal and isothermal annealing studies were conducted on 0.1 and 2 ohm centimeter n(+)/p silicon cells after irradiation by 1 MeV electrons at fluences of 10 to the 14th power, 5 times 10 to the 14th power, and 10 to the 15th power per square centimeter. For the 0.1 ohm centimeter cells, reverse annealing was not observed in the isochronal data. However, reverse annealing was observed between approximately 200 and 325 C in the isochronal data of the 2 ohm centimeter cells. Isothermal annealing of 0.1 ohm centimeter cells at 500 C restored pre-irradiation maximum power P sub max within 20 minutes at fluence = 10 to the 14th power, in 180 minutes at fluence = 5 times 10 to the 14th power and to 92 percent of pre-irradiation P sub max in 180 minutes for fluence = 10 to the 15th power. Annealing at 450 C was found inadequate to restore 0.1 ohm centimeter cell performance within reasonable times for all fluence levels. By comparison, at 450 C, the P sub max of 2 ohm centimeter cells was restored within 45 minutes, for the two highest fluence levels, while for the lowest fluence, restoration was completed within 15 minutes. Spectral response data indicate that, for both resistivities, degradation occurs predominantly in the cells p-type base region.

  13. Improvement on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Energy Technology Data Exchange (ETDEWEB)

    Esakky, Papanasam, E-mail: papanasamte@gmail.com; Kailath, Binsu J

    2017-08-15

    Highlights: • Post deposition annealing (PDA) and post metallization annealing (PMA) on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors. • Post deposition N{sub 2}O plasma annealing inhibits crystallization of HfO{sub 2} during high temperature annealing. • Plasma annealing followed by RTA in N{sub 2} results in formation of hafnium silicate at the HfO{sub 2}-SiC interface. • PDA reduces interface state density (D{sub it}) and gate leakage current density (J{sub g}) by order. • PMA in forming gas for 40 min results in better passivation and reduces D{sub it} by two orders and J{sub g} by thrice. - Abstract: HfO{sub 2} as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO{sub 2}/SiC capacitors offer higher sensitivity than SiO{sub 2}/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO{sub 2}/SiC interface. Effect of post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO{sub 2}/SiC MIS capacitors are reported in this work. N{sub 2}O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N{sub 2} result in formation of Hf silicate at the HfO{sub 2}/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO{sub 2}/SiC capacitors.

  14. Laser annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    White, C.W.; Narayan, J.; Young, R.T.

    1978-11-01

    The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit

  15. Study of annealing effects in Al–Sb bilayer thin films

    Indian Academy of Sciences (India)

    There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

  16. Finite-time thermodynamics and simulated annealing

    International Nuclear Information System (INIS)

    Andresen, B.

    1989-01-01

    When the general, global optimization technique simulated annealing was introduced by Kirkpatrick et al. (1983), this mathematical algorithm was based on an analogy to the statistical mechanical behavior of real physical systems like spin glasses, hence the name. In the intervening span of years the method has proven exceptionally useful for a great variety of extremely complicated problems, notably NP-problems like the travelling salesman, DNA sequencing, and graph partitioning. Only a few highly optimized heuristic algorithms (e.g. Lin, Kernighan 1973) have outperformed simulated annealing on their respective problems (Johnson et al. 1989). Simulated annealing in its current form relies only on the static quantity 'energy' to describe the system, whereas questions of rate, as in the temperature path (annealing schedule, see below), are left to intuition. We extent the connection to physical systems and take over further components from thermodynamics like ensemble, heat capacity, and relaxation time. Finally we refer to finite-time thermodynamics (Andresen, Salomon, Berry 1984) for a dynamical estimate of the optimal temperature path. (orig.)

  17. Enhanced Simulated Annealing for Solving Aggregate Production Planning

    Directory of Open Access Journals (Sweden)

    Mohd Rizam Abu Bakar

    2016-01-01

    Full Text Available Simulated annealing (SA has been an effective means that can address difficulties related to optimisation problems. SA is now a common discipline for research with several productive applications such as production planning. Due to the fact that aggregate production planning (APP is one of the most considerable problems in production planning, in this paper, we present multiobjective linear programming model for APP and optimised by SA. During the course of optimising for the APP problem, it uncovered that the capability of SA was inadequate and its performance was substandard, particularly for a sizable controlled APP problem with many decision variables and plenty of constraints. Since this algorithm works sequentially then the current state will generate only one in next state that will make the search slower and the drawback is that the search may fall in local minimum which represents the best solution in only part of the solution space. In order to enhance its performance and alleviate the deficiencies in the problem solving, a modified SA (MSA is proposed. We attempt to augment the search space by starting with N+1 solutions, instead of one solution. To analyse and investigate the operations of the MSA with the standard SA and harmony search (HS, the real performance of an industrial company and simulation are made for evaluation. The results show that, compared to SA and HS, MSA offers better quality solutions with regard to convergence and accuracy.

  18. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    International Nuclear Information System (INIS)

    Elen, Ken; Capon, Boris; De Dobbelaere, Christopher; Dewulf, Daan; Peys, Nick; Detavernier, Christophe; Hardy, An; Van Bael, Marlies K.

    2014-01-01

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum

  19. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Elen, Ken [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Strategisch Initiatief Materialen (SIM), SoPPoM Program (Belgium); Capon, Boris [Strategisch Initiatief Materialen (SIM), SoPPoM Programm (Belgium); Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); De Dobbelaere, Christopher [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Dewulf, Daan [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Peys, Nick [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Kapeldreef 75, B-3001 Heverlee (Belgium); Detavernier, Christophe [Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); Hardy, An [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

    2014-03-31

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum.

  20. Computational Role of Tunneling in a Programmable Quantum Annealer

    Science.gov (United States)

    Boixo, Sergio; Smelyanskiy, Vadim; Shabani, Alireza; Isakov, Sergei V.; Dykman, Mark; Amin, Mohammad; Mohseni, Masoud; Denchev, Vasil S.; Neven, Hartmut

    2016-01-01

    Quantum tunneling is a phenomenon in which a quantum state tunnels through energy barriers above the energy of the state itself. Tunneling has been hypothesized as an advantageous physical resource for optimization. Here we present the first experimental evidence of a computational role of multiqubit quantum tunneling in the evolution of a programmable quantum annealer. We developed a theoretical model based on a NIBA Quantum Master Equation to describe the multi-qubit dissipative cotunneling effects under the complex noise characteristics of such quantum devices.We start by considering a computational primitive, the simplest non-convex optimization problem consisting of just one global and one local minimum. The quantum evolutions enable tunneling to the global minimum while the corresponding classical paths are trapped in a false minimum. In our study the non-convex potentials are realized by frustrated networks of qubit clusters with strong intra-cluster coupling. We show that the collective effect of the quantum environment is suppressed in the critical phase during the evolution where quantum tunneling decides the right path to solution. In a later stage dissipation facilitates the multiqubit cotunneling leading to the solution state. The predictions of the model accurately describe the experimental data from the D-WaveII quantum annealer at NASA Ames. In our computational primitive the temperature dependence of the probability of success in the quantum model is opposite to that of the classical paths with thermal hopping. Specially, we provide an analysis of an optimization problem with sixteen qubits,demonstrating eight qubit cotunneling that increases success probabilities. Furthermore, we report results for larger problems with up to 200 qubits that contain the primitive as subproblems.

  1. Effect of Annealing Time for Quenching CuAl7Fe5Ni5W2Si2 Bronze on the Microstructure and Mechanical Properties

    Directory of Open Access Journals (Sweden)

    B. P. Pisarek

    2012-04-01

    Full Text Available This paper presents the influence of annealing time 30, 60 and 120 min at 1000°C for quenching CuAl7Fe5Ni5W2Si2 bronze in 10% water solution of NaCl, on the microstructure and mechanical properties. The presented results concern the species newly developed aluminum-iron-nickel bronze, with additions W and Si.In order to determine changes in the microstructure of the hardened bronze metallographic studies were performed on cylindrical samples of diameter 10 mm, on the metallographic microscope with digital image analysis, X-ray phase analysis, EDX point with the digital recording on the computer. Specified percentage of the microstructure of martensite and bainite, participation of proeutectoid α phase in the microstructure, grain size of former β phase, the amount of dissolved κ phase.It was found that in the microstructure of bronze in the cast state, there are a number of intermetallic phases of κ type. At interphase boundaries of primary intermetallic faceted precipitates, especially rich in tungsten (IM_W, nucleate and grow dendritic primary intermetallic κI phases, with chemical composition similar to the type of Fe3Si iron silicide.Dissolved, during the heating, in the β phase are all the intermediate phase included in the microstructure, with the exception of primary intermetallic phases of tungsten and κI. Prolongation of the isothermal annealing causes coagulation and coalescence of primary phases. In microstructure of the bronze after quenching obtained the α phase precipitation on the grain boundary of secondary β phase, coarse bainite and martensite, for all annealing times. With the change of annealing time are changed the relative proportions of individual phases or their systems, in the microstructure. In the microstructure of bronze, hold at temperature of 1000°C for 60 min, after quenching martensitic microstructure was obtained with the primary phases, and the least amount of bainite.

  2. The influence of Ti doping and annealing on Ce_2Ti_2O_7 flash memory devices

    International Nuclear Information System (INIS)

    Kao, Chyuan Haur; Chen, Su Zhien; Luo, Yang; Chiu, Wang Ting; Chiu, Shih Wei; Chen, I Chien; Lin, Chan-Yu; Chen, Hsiang

    2017-01-01

    Highlights: • Ce_2Ti_2O_7 flash memories have been fabricated. • Material quality can be improved by annealing. • The memory performance can be enhanced by Ti doping. • Ti doping and annealing can reinforce crystallization. - Abstract: In this research, a CeO_2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce_2Ti_2O_7 trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce_2Ti_2O_7-based memory device is promising for future industrial flash memory applications.

  3. Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Rao, P. Koteswara; Ramesh, C.K.

    2007-01-01

    Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN (n d = 4.07 x 10 17 cm -3 ) have been investigated using current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75 eV (I-V) and 0.93 eV (C-V), respectively. It is noted that the barrier height increased when the contact was annealed at 300 deg. C and slightly decreased upon annealing at temperatures of 400 deg. C and 500 deg. C. The extracted Schottky barrier heights are 0.99 eV (I-V), 1.34 eV (C-V) for 300 deg. C, 0.88 eV (I-V), 1.20 eV (C-V) for 400 deg. C and 0.72 eV (I-V), 1.08 eV (C-V) for 500 deg. C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures

  4. Formation of oxygen related donors in step-annealed CZ–silicon

    Indian Academy of Sciences (India)

    The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ–silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (c). Oxygen and carbon both accelerate thermal ...

  5. A note on simulated annealing to computer laboratory scheduling ...

    African Journals Online (AJOL)

    The concepts, principles and implementation of simulated Annealing as a modem heuristic technique is presented. Simulated Annealing algorithm is used in solving real life problem of Computer Laboratory scheduling in order to maximize the use of scarce and insufficient resources. KEY WORDS: Simulated Annealing ...

  6. Improved perovskite phototransistor prepared using multi-step annealing method

    Science.gov (United States)

    Cao, Mingxuan; Zhang, Yating; Yu, Yu; Yao, Jianquan

    2018-02-01

    Organic-inorganic hybrid perovskites with good intrinsic physical properties have received substantial interest for solar cell and optoelectronic applications. However, perovskite film always suffers from a low carrier mobility due to its structural imperfection including sharp grain boundaries and pinholes, restricting their device performance and application potential. Here we demonstrate a straightforward strategy based on multi-step annealing process to improve the performance of perovskite photodetector. Annealing temperature and duration greatly affects the surface morphology and optoelectrical properties of perovskites which determines the device property of phototransistor. The perovskite films treated with multi-step annealing method tend to form highly uniform, well-crystallized and high surface coverage perovskite film, which exhibit stronger ultraviolet-visible absorption and photoluminescence spectrum compare to the perovskites prepared by conventional one-step annealing process. The field-effect mobilities of perovskite photodetector treated by one-step direct annealing method shows mobility as 0.121 (0.062) cm2V-1s-1 for holes (electrons), which increases to 1.01 (0.54) cm2V-1s-1 for that treated with muti-step slow annealing method. Moreover, the perovskite phototransistors exhibit a fast photoresponse speed of 78 μs. In general, this work focuses on the influence of annealing methods on perovskite phototransistor, instead of obtains best parameters of it. These findings prove that Multi-step annealing methods is feasible to prepared high performance based photodetector.

  7. Synthesis and characterization of type solid solution in the binary ...

    Indian Academy of Sciences (India)

    We have investigated Bi2O3–Eu2O3 binary system by doping with Eu2O3 in the composition range from 1 to 10 mole% via solid state reactions and succeeded to stabilize -Bi2O3 ... Our experimental observations strongly suggested that oxygen deficiency type non-stoichiometry is present in doped type solid solutions.

  8. Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

    International Nuclear Information System (INIS)

    Wang Qingtao; Wang Guanzhong; Jie Jiansheng; Han Xinhai; Xu Bo; Hou, J.G.

    2005-01-01

    (001)-oriented ZnO films on Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05 M zinc nitrate at 65 deg. C. A bound exciton emission band around 3.34 eV along with three longitudinal optical (LO) phonon replicas and an intensive broad emission band around 2.17 eV were observed from the photoluminescence (PL) spectra of ZnO films prepared at more positive potential (- 0.6∼- 0.8 V). When more negative potential (- 1.0∼- 1.4 V) was applied, the ultraviolet emission band disappeared. These results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. The PL spectra of the annealed ZnO films prepared at more positive electrodeposition potentials - 0.6∼- 1.0 V exhibit the ultraviolet emission at 3.35 eV and a negligibly weak emission from defects. Annealing resulted in the enhancement and sharpening of the excitonic emission band and decrease of the deep level emission. The bandgap (E g ) of the ZnO film prepared at - 1.0 V on indium tin oxide (ITO) substrate decreased from 3.56 to 3.29 eV due to the removing of Zn(OH) 2 from the film after annealing

  9. Improvement of photovoltaic performance of the inverted planar perovskite solar cells by using CH3NH3PbI3-xBrx films with solvent annealing

    Science.gov (United States)

    Wang, Shan; Zhang, Weijia; Ma, Denghao; Jiang, Zhaoyi; Fan, Zhiqiang; Ma, Qiang; Xi, Yilian

    2018-01-01

    In this paper, the CH3NH3PbI3-xBrx films with various Br-doping contents were successfully prepared by solution processed deposition and followed by annealing process. This method simultaneously modified the morphology and composition of the CH3NH3PbI3 film. The effects of annealing treatment of CH3NH3PbI3-xBrx films under N2 and DMSO conditions on the microstructure of films and photoelectric properties of the solar cells were systematically investigated. The relationship of the component ratio of RBr/I= CH3NH3PbI3-xBrx/CH3NH3PbI3 in the resulting perovskite versus CH3NH3Br concentration also was explored. The results revealed that the CH3NH3PbI3-xBrx films annealed under DMSO exhibited increased grain sizes, enhanced crystallinity, enlarged bandgap and reduced defect density compared with that of the N2 annealing. It also was found that the RBr/I linearly increased in the resulting perovskite with the increased of CH3NH3Br concentration in the methylammonium halide mixture solutions. Furthermore, the photovoltaic performances of devices fabricated using DMSO precursor solvent were worse than that of DMF under N2 annealing atmosphere. When CH3NH3Br concentration was 7.5 mg ml-1, the planar perovskite solar cell based on CH3NH3PbI3-xBrx annealed under DMSO showed the best efficiency of 13.7%.

  10. High-temperature annealing of graphite: A molecular dynamics study

    Science.gov (United States)

    Petersen, Andrew; Gillette, Victor

    2018-05-01

    A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

  11. Combined Simulated Annealing and Genetic Algorithm Approach to Bus Network Design

    Science.gov (United States)

    Liu, Li; Olszewski, Piotr; Goh, Pong-Chai

    A new method - combined simulated annealing (SA) and genetic algorithm (GA) approach is proposed to solve the problem of bus route design and frequency setting for a given road network with fixed bus stop locations and fixed travel demand. The method involves two steps: a set of candidate routes is generated first and then the best subset of these routes is selected by the combined SA and GA procedure. SA is the main process to search for a better solution to minimize the total system cost, comprising user and operator costs. GA is used as a sub-process to generate new solutions. Bus demand assignment on two alternative paths is performed at the solution evaluation stage. The method was implemented on four theoretical grid networks of different size and a benchmark network. Several GA operators (crossover and mutation) were utilized and tested for their effectiveness. The results show that the proposed method can efficiently converge to the optimal solution on a small network but computation time increases significantly with network size. The method can also be used for other transport operation management problems.

  12. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

    International Nuclear Information System (INIS)

    Pantleon, Karen; Somers, Marcel A.J.

    2010-01-01

    Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

  13. Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

    Science.gov (United States)

    Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

    2017-07-01

    Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

  14. Optimization using quantum mechanics: quantum annealing through adiabatic evolution

    International Nuclear Information System (INIS)

    Santoro, Giuseppe E; Tosatti, Erio

    2006-01-01

    We review here some recent work in the field of quantum annealing, alias adiabatic quantum computation. The idea of quantum annealing is to perform optimization by a quantum adiabatic evolution which tracks the ground state of a suitable time-dependent Hamiltonian, where 'ℎ' is slowly switched off. We illustrate several applications of quantum annealing strategies, starting from textbook toy-models-double-well potentials and other one-dimensional examples, with and without disorder. These examples display in a clear way the crucial differences between classical and quantum annealing. We then discuss applications of quantum annealing to challenging hard optimization problems, such as the random Ising model, the travelling salesman problem and Boolean satisfiability problems. The techniques used to implement quantum annealing are either deterministic Schroedinger's evolutions, for the toy models, or path-integral Monte Carlo and Green's function Monte Carlo approaches, for the hard optimization problems. The crucial role played by disorder and the associated non-trivial Landau-Zener tunnelling phenomena is discussed and emphasized. (topical review)

  15. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.; Miranda, S. M. C.; Alves, E.; Roqan, Iman S.; O'Donnell, K. P.; Bokowski, M.

    2012-01-01

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  16. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.

    2012-02-09

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  17. Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P{sup +}-implanted Si studied using monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Moriya, Tsuyoshi; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kitano, Tomohisa; Watanabe, Masahito; Kawano, Takao; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Mikado, Tomohisa

    1996-04-01

    Effects of oxygen atoms recoiled from SiO{sub 2} films on depth profiles of defects and annealing processes in P{sup +}-implanted Si were studied using monoenergetic positron beams. For an epitaxial Si specimen, the depth profile of defects was found to be shifted toward the surface by recoil implantation of oxygen atoms. This was attributed to the formation of vacancy-oxygen complexes and a resultant decrease in the diffusion length of vacancy-type defects. The recoiled oxygen atoms stabilized amorphous regions introduced by P{sup +}-implantation, and the annealing of these regions was observed after rapid thermal annealing (RTA) at 700degC. For a Czochralski-grown Si specimen fabricated by through-oxide implantation, the recoiled oxygen atoms introduced interstitial-type defects upon RTA below the SiO{sub 2}/Si interface, and such defects were dissociated by annealing at 1000degC. (author)

  18. Rapid hardening induced by electric pulse annealing in nanostructured pure aluminum

    DEFF Research Database (Denmark)

    Zeng, Wei; Shen, Yao; Zhang, Ning

    2012-01-01

    Nanostructured pure aluminum was fabricated by heavy cold-rolling and then subjected to recovery annealing either by applying electric pulse annealing or by traditional air furnace annealing. Both annealing treatments resulted in an increase in yield strength due to the occurrence of a “dislocation...... source-limited hardening” mechanism. However, the hardening kinetics was substantially faster for the electric pulse annealed material. Detailed microstructural characterization suggested that the rapid hardening during electric pulse annealing is related to an enhanced rate of recovery of dislocation...

  19. Carbon nanotubes growing on rapid thermal annealed Ni and their application to a triode-type field emission device

    International Nuclear Information System (INIS)

    Uh, Hyung Soo; Park, Sang Sik

    2006-01-01

    In this paper, we demonstrate a new triode-type field emitter arrays using carbon nanotubes (CNTs) as an electron emitter source. In the proposed structure, the gate electrode is located underneath the cathode electrode and the extractor electrode is surrounded by CNT emitters. CNTs were selectively grown on the patterned Ni catalyst layer by using plasma-enhanced chemical vapor deposition (PECVD). Vertically aligned CNTs were grown with gas mixture of acetylene and ammonia under external DC bias. Compared with a conventional under-gate structure, the proposed structure reduced the turn-on voltage by about 30%. In addition, with a view to controlling the density of CNTs, Ni catalyst thickness was varied and rapid thermal annealing (RTA) treatment was optionally adopted before CNT growth. With controlled Ni thickness and RTA condition, field emission efficiency was greatly improved by reducing the density of CNTs, which is due to the reduction of the electric field screening effect caused by dense CNTs

  20. Annealing of magnetic nanoparticles for their encapsulation into microcarriers guided by vascular magnetic resonance navigation

    Energy Technology Data Exchange (ETDEWEB)

    Pouponneau, Pierre; Segura, Vincent [Ecole Polytechnique de Montreal (EPM), NanoRobotics Laboratory, Department of Computer and Software Engineering and Institute of Biomedical Engineering (Canada); Savadogo, Oumarou [Ecole Polytechnique de Montreal (EPM), Laboratoire de Nouveaux Materiaux pour l' electrochimie et l' energie (Canada); Leroux, Jean-Christophe [Universite de Montreal, Faculty of Pharmacy (Canada); Martel, Sylvain, E-mail: sylvain.martel@polymtl.ca [Ecole Polytechnique de Montreal (EPM), NanoRobotics Laboratory, Department of Computer and Software Engineering and Institute of Biomedical Engineering (Canada)

    2012-12-15

    Iron, cobalt and iron-cobalt nanoparticle properties, such as diameter, saturation magnetization (Ms), crystal structure, surface composition and stability in physiological solutions, were investigated according to the annealing temperature used prior to their encapsulation into poly(d, l-lactic-co-glycolic acid) (PLGA) microcarriers. These new 60-{mu}m microparticles should exhibit an Ms around 70 emu g{sup -1} to be guided in real time from their intravascular injection site to a tumor with a magnetic resonance imaging scanner. The challenge in the preparation of the nanoparticles consisted in limiting Ms loss by oxidation and the release of metallic ions. It was found that when the annealing temperature reached 650 Degree-Sign C, Fe nanoparticles coalesced, the mean diameter reached (O) 361 {+-} 138 nm and Ms increased to 171 emu g{sup -1}. These nanoparticles exhibited a core of {alpha}-Fe and a shell of Fe{sub 3}O{sub 4}. On the opposite, Co nanoparticle properties were not affected by the annealing temperature: O and Ms were around 120 nm and 140 emu g{sup -1}, respectively. FeCo (60:40, atomic percent) nanoparticles coalesced at an annealing temperature >550 Degree-Sign C, O and Ms reached 217 nm and 213 emu g{sup -1}, respectively. Co and FeCo nanoparticles with a Co atomic proportion >15 % were coated with a graphite shell when the temperature was set to 550 Degree-Sign C. In physiological solution, Fe and Co nanoparticles significantly released more ions than FeCo nanoparticles. After the preparation steps prior to their encapsulation, the Ms of Fe and FeCo nanoparticles decreased by 25 and 3 %, respectively. FeCo-PLGA microparticles possessed a relatively high Ms (73 emu g{sup -1}) while that of Fe-PLGA microparticle (20 emu g{sup -1}) was too low for efficient targeting. The graphite shell was efficient to preserve Ms during the encapsulation.

  1. Simulated annealing and joint manufacturing batch-sizing

    Directory of Open Access Journals (Sweden)

    Sarker Ruhul

    2003-01-01

    Full Text Available We address an important problem of a manufacturing system. The system procures raw materials from outside suppliers in a lot and processes them to produce finished goods. It proposes an ordering policy for raw materials to meet the requirements of a production facility. In return, this facility has to deliver finished products demanded by external buyers at fixed time intervals. First, a general cost model is developed considering both raw materials and finished products. Then this model is used to develop a simulated annealing approach to determining an optimal ordering policy for procurement of raw materials and also for the manufacturing batch size to minimize the total cost for meeting customer demands in time. The solutions obtained were compared with those of traditional approaches. Numerical examples are presented. .

  2. Angular filter refractometry analysis using simulated annealing.

    Science.gov (United States)

    Angland, P; Haberberger, D; Ivancic, S T; Froula, D H

    2017-10-01

    Angular filter refractometry (AFR) is a novel technique used to characterize the density profiles of laser-produced, long-scale-length plasmas [Haberberger et al., Phys. Plasmas 21, 056304 (2014)]. A new method of analysis for AFR images was developed using an annealing algorithm to iteratively converge upon a solution. A synthetic AFR image is constructed by a user-defined density profile described by eight parameters, and the algorithm systematically alters the parameters until the comparison is optimized. The optimization and statistical uncertainty calculation is based on the minimization of the χ 2 test statistic. The algorithm was successfully applied to experimental data of plasma expanding from a flat, laser-irradiated target, resulting in an average uncertainty in the density profile of 5%-20% in the region of interest.

  3. Deconvoluting the mechanism of microwave annealing of block copolymer thin films.

    Science.gov (United States)

    Jin, Cong; Murphy, Jeffrey N; Harris, Kenneth D; Buriak, Jillian M

    2014-04-22

    The self-assembly of block copolymer (BCP) thin films is a versatile method for producing periodic nanoscale patterns with a variety of shapes. The key to attaining a desired pattern or structure is the annealing step undertaken to facilitate the reorganization of nanoscale phase-segregated domains of the BCP on a surface. Annealing BCPs on silicon substrates using a microwave oven has been shown to be very fast (seconds to minutes), both with and without contributions from solvent vapor. The mechanism of the microwave annealing process remains, however, unclear. This work endeavors to uncover the key steps that take place during microwave annealing, which enable the self-assembly process to proceed. Through the use of in situ temperature monitoring with a fiber optic temperature probe in direct contact with the sample, we have demonstrated that the silicon substrate on which the BCP film is cast is the dominant source of heating if the doping of the silicon wafer is sufficiently low. Surface temperatures as high as 240 °C are reached in under 1 min for lightly doped, high resistivity silicon wafers (n- or p-type). The influence of doping, sample size, and BCP composition was analyzed to rule out other possible mechanisms. In situ temperature monitoring of various polymer samples (PS, P2VP, PMMA, and the BCPs used here) showed that the polymers do not heat to any significant extent on their own with microwave irradiation of this frequency (2.45 GHz) and power (∼600 W). It was demonstrated that BCP annealing can be effectively carried out in 60 s on non-microwave-responsive substrates, such as highly doped silicon, indium tin oxide (ITO)-coated glass, glass, and Kapton, by placing a piece of high resistivity silicon wafer in contact with the sample-in this configuration, the silicon wafer is termed the heating element. Annealing and self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) and polystyrene-block-poly(methyl methacrylate) (PS

  4. Combined Simulated Annealing Algorithm for the Discrete Facility Location Problem

    Directory of Open Access Journals (Sweden)

    Jin Qin

    2012-01-01

    Full Text Available The combined simulated annealing (CSA algorithm was developed for the discrete facility location problem (DFLP in the paper. The method is a two-layer algorithm, in which the external subalgorithm optimizes the decision of the facility location decision while the internal subalgorithm optimizes the decision of the allocation of customer's demand under the determined location decision. The performance of the CSA is tested by 30 instances with different sizes. The computational results show that CSA works much better than the previous algorithm on DFLP and offers a new reasonable alternative solution method to it.

  5. Large-time asymptotic behaviour of solutions of non-linear Sobolev-type equations

    International Nuclear Information System (INIS)

    Kaikina, Elena I; Naumkin, Pavel I; Shishmarev, Il'ya A

    2009-01-01

    The large-time asymptotic behaviour of solutions of the Cauchy problem is investigated for a non-linear Sobolev-type equation with dissipation. For small initial data the approach taken is based on a detailed analysis of the Green's function of the linear problem and the use of the contraction mapping method. The case of large initial data is also closely considered. In the supercritical case the asymptotic formulae are quasi-linear. The asymptotic behaviour of solutions of a non-linear Sobolev-type equation with a critical non-linearity of the non-convective kind differs by a logarithmic correction term from the behaviour of solutions of the corresponding linear equation. For a critical convective non-linearity, as well as for a subcritical non-convective non-linearity it is proved that the leading term of the asymptotic expression for large times is a self-similar solution. For Sobolev equations with convective non-linearity the asymptotic behaviour of solutions in the subcritical case is the product of a rarefaction wave and a shock wave. Bibliography: 84 titles.

  6. Annealing behavior of high permeability amorphous alloys

    International Nuclear Information System (INIS)

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

  7. Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

    International Nuclear Information System (INIS)

    Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian; Zhou, Xiao; Qin, Donghuan; Wu, Hongbin; Xia, Yuxin; Hou, Lintao; Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui

    2013-01-01

    CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO x /Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl 2 annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl 2 annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl 2 -annealing conditions (370 °C CdCl 2 annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl 2 -annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V OC of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage

  8. Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs

    Directory of Open Access Journals (Sweden)

    Tian Yuan

    2016-01-01

    Full Text Available N-type InGaN/GaN multiple-quantum-wells (MQWs were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD. The crystal quality and optical properties of samples after rapid thermal annealing (RTA at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD and photoluminescence (PL spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.

  9. Effect of Annealing on the Pitting Corrosion Resistance of Anodized Aluminum-Magnesium Alloy Processed by Equal Channel Angular Pressing

    Energy Technology Data Exchange (ETDEWEB)

    Son, In Joon; Nakano, Hiroaki; Oue, Satoshi; Fukushima, Hisaaki; Horita, Zenji [Kyushu University, Fukuoka (Japan); Kobayashi, Shigeo [Kyushu Sangyo University, Fukuoka (Japan)

    2007-12-15

    The effect of annealing on the pitting corrosion resistance of anodized Al-Mg alloy (AA5052) processed by equal-channel angular pressing (ECAP) was investigated by electrochemical techniques in a solution containing 0.2 mol/L of AlCl{sub 3} and also by surface analysis. The Al-Mg alloy was annealed at a fixed temperature between 473 and 573 K for 120 min in air after ECAP. Anodizing was conducted for 40 min at 100-400 A/m{sup 2} at 293 K in a solution containing 1.53 mol/L of H{sub 2}SO{sub 4} and 0.0185 mol/L of Al{sub 2}(SO{sub 4}){sub 3}. The internal stress generated in anodic oxide films during anodization was measured with a strain gauge to clarify the effect of ECAP on the pitting corrosion resistance of anodized Al-Mg alloy. The time required to initiate the pitting corrosion of anodized Al-Mg alloy was shorter in samples subjected to ECAP, indicating that ECAP decreased the pitting corrosion resistance. however, the pitting corrosion resistance was greatly improved by annealing after ECAP. The time required to initiate pitting corrosion increased with increasing annealing temperature. The strain gauge attached to Al-Mg alloy revealed that the internal stress present in the anodic oxide films was compressive stress, and that the stress was larger with ECAP than without. The compressive internal stress gradually decreased with increasing annealing temperature. Scanning electron microscopy showed that cracks occurred in the anodic oxide film on Al-Mg alloy during initial corrosion and that the cracks were larger with ECAP than without. The ECAP process of severe plastic deformation produces large internal stresses in the Al-Mg alloy: the stresses remain in the anodic oxide films, increasing the likelihood of cracks. it is assumed that the pitting corrosion is promoted by these cracks as a result of the higher internal stress resulting from ECAP. The improvement in the pitting corrosion resistance of anodized AlMg alloy as a result of annealing appears to be

  10. Effect of Annealing on the Pitting Corrosion Resistance of Anodized Aluminum-Magnesium Alloy Processed by Equal Channel Angular Pressing

    International Nuclear Information System (INIS)

    Son, In Joon; Nakano, Hiroaki; Oue, Satoshi; Fukushima, Hisaaki; Horita, Zenji; Kobayashi, Shigeo

    2007-01-01

    The effect of annealing on the pitting corrosion resistance of anodized Al-Mg alloy (AA5052) processed by equal-channel angular pressing (ECAP) was investigated by electrochemical techniques in a solution containing 0.2 mol/L of AlCl 3 and also by surface analysis. The Al-Mg alloy was annealed at a fixed temperature between 473 and 573 K for 120 min in air after ECAP. Anodizing was conducted for 40 min at 100-400 A/m 2 at 293 K in a solution containing 1.53 mol/L of H 2 SO 4 and 0.0185 mol/L of Al 2 (SO 4 ) 3 . The internal stress generated in anodic oxide films during anodization was measured with a strain gauge to clarify the effect of ECAP on the pitting corrosion resistance of anodized Al-Mg alloy. The time required to initiate the pitting corrosion of anodized Al-Mg alloy was shorter in samples subjected to ECAP, indicating that ECAP decreased the pitting corrosion resistance. however, the pitting corrosion resistance was greatly improved by annealing after ECAP. The time required to initiate pitting corrosion increased with increasing annealing temperature. The strain gauge attached to Al-Mg alloy revealed that the internal stress present in the anodic oxide films was compressive stress, and that the stress was larger with ECAP than without. The compressive internal stress gradually decreased with increasing annealing temperature. Scanning electron microscopy showed that cracks occurred in the anodic oxide film on Al-Mg alloy during initial corrosion and that the cracks were larger with ECAP than without. The ECAP process of severe plastic deformation produces large internal stresses in the Al-Mg alloy: the stresses remain in the anodic oxide films, increasing the likelihood of cracks. it is assumed that the pitting corrosion is promoted by these cracks as a result of the higher internal stress resulting from ECAP. The improvement in the pitting corrosion resistance of anodized AlMg alloy as a result of annealing appears to be attributable to a decrease in

  11. Controlling coverage of solution cast materials with unfavourable surface interactions

    KAUST Repository

    Burlakov, V. M.; Eperon, G. E.; Snaith, H. J.; Chapman, S. J.; Goriely, A.

    2014-01-01

    Creating uniform coatings of a solution-cast material is of central importance to a broad range of applications. Here, a robust and generic theoretical framework for calculating surface coverage by a solid film of material de-wetting a substrate is presented. Using experimental data from semiconductor thin films as an example, we calculate surface coverage for a wide range of annealing temperatures and film thicknesses. The model generally predicts that for each value of the annealing temperature there is a range of film thicknesses leading to poor surface coverage. The model accurately reproduces solution-cast thin film coverage for organometal halide perovskites, key modern photovoltaic materials, and identifies processing windows for both high and low levels of surface coverage. © 2014 AIP Publishing LLC.

  12. Controlling coverage of solution cast materials with unfavourable surface interactions

    KAUST Repository

    Burlakov, V. M.

    2014-03-03

    Creating uniform coatings of a solution-cast material is of central importance to a broad range of applications. Here, a robust and generic theoretical framework for calculating surface coverage by a solid film of material de-wetting a substrate is presented. Using experimental data from semiconductor thin films as an example, we calculate surface coverage for a wide range of annealing temperatures and film thicknesses. The model generally predicts that for each value of the annealing temperature there is a range of film thicknesses leading to poor surface coverage. The model accurately reproduces solution-cast thin film coverage for organometal halide perovskites, key modern photovoltaic materials, and identifies processing windows for both high and low levels of surface coverage. © 2014 AIP Publishing LLC.

  13. Modeling of irradiation embrittlement and annealing/recovery in pressure vessel steels

    International Nuclear Information System (INIS)

    Lott, R.G.; Freyer, P.D.

    1996-01-01

    The results of reactor pressure vessel (RPV) annealing studies are interpreted in light of the current understanding of radiation embrittlement phenomena in RPV steels. An extensive RPV irradiation embrittlement and annealing database has been compiled and the data reveal that the majority of annealing studies completed to date have employed test reactor irradiated weldments. Although test reactor and power reactor irradiations result in similar embrittlement trends, subtle differences between these two damage states can become important in the interpretation of annealing results. Microstructural studies of irradiated steels suggest that there are several different irradiation-induced microstructural features that contribute to embrittlement. The amount of annealing recovery and the post-anneal re-embrittlement behavior of a steel are determined by the annealing response of these microstructural defects. The active embrittlement mechanisms are determined largely by the irradiation temperature and the material composition. Interpretation and thorough understanding of annealing results require a model that considers the underlying physical mechanisms of embrittlement. This paper presents a framework for the construction of a physically based mechanistic model of irradiation embrittlement and annealing behavior

  14. Effect of Annealing and Operating Substrate Temperature on Methanol Gas Sensing Properties of SnO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2017-04-01

    Full Text Available SnO2 based sensing nano-material have been synthesized by simple chemical route using Stannic (IV chloride-pentahydrate (SnCl4.5H2O as precursor. The structural properties of the prepared SnO2 nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD analysis. The XRD patterns showed pure bulk SnO2 with a tetragonal rutile structure in the nano-powders. By increasing the annealing temperatures, the size of crystals were seen to increase, the diffraction peaks were found narrower and the intensity was higher. SnO2 films prepared by spin coating the prepared nano-material solution was tested at different temperatures for methanol vapour and it showed that the film prepared from SnO2 powder annealed at 500 0C shows the higher sensitivity to methanol vapour at 150 0C substrate temperature with significantly low response and recovery time.

  15. An evolutionary programming based simulated annealing method for solving the unit commitment problem

    Energy Technology Data Exchange (ETDEWEB)

    Christober Asir Rajan, C. [Department of EEE, Pondicherry Engineering College, Pondicherry 605014 (India); Mohan, M.R. [Department of EEE, Anna University, Chennai 600 025 (India)

    2007-09-15

    This paper presents a new approach to solve the short-term unit commitment problem using an evolutionary programming based simulated annealing method. The objective of this paper is to find the generation scheduling such that the total operating cost can be minimized, when subjected to a variety of constraints. This also means that it is desirable to find the optimal generating unit commitment in the power system for the next H hours. Evolutionary programming, which happens to be a global optimisation technique for solving unit commitment Problem, operates on a system, which is designed to encode each unit's operating schedule with regard to its minimum up/down time. In this, the unit commitment schedule is coded as a string of symbols. An initial population of parent solutions is generated at random. Here, each schedule is formed by committing all the units according to their initial status (''flat start''). Here the parents are obtained from a pre-defined set of solution's, i.e. each and every solution is adjusted to meet the requirements. Then, a random recommitment is carried out with respect to the unit's minimum down times. And SA improves the status. The best population is selected by evolutionary strategy. The Neyveli Thermal Power Station (NTPS) Unit-II in India demonstrates the effectiveness of the proposed approach; extensive studies have also been performed for different power systems consists of 10, 26, 34 generating units. Numerical results are shown comparing the cost solutions and computation time obtained by using the Evolutionary Programming method and other conventional methods like Dynamic Programming, Lagrangian Relaxation and Simulated Annealing and Tabu Search in reaching proper unit commitment. (author)

  16. Using an equation based on flow stress to estimate structural integrity of annealed Type 304 stainless steel plate and pipes containing surface defects

    International Nuclear Information System (INIS)

    Reuter, W.G.; Place, T.A.

    1981-01-01

    An accurate assessment of the influence of defects on structural component integrity is needed. Generally accepted analytical techniques are not available for the very ductile materials used in many nuclear reactor components. Some results are presented from a test programme to obtain data by which to evaluate proposed models. Plate and pipe specimens containing surface flaws were fabricated from annealed Type 304 stainless steel and tested at room temperature. An evaluation of an empirical equation based on flow stress is presented. In essentially all instances the flow stress is not a constant but varies as a function of the size of the surface flaw. (author)

  17. Thermal annealing of an embrittled reactor pressure vessel

    International Nuclear Information System (INIS)

    Mager, T.R.; Dragunov, Y.G.; Leitz, C.

    1998-01-01

    As a result of the popularity of the Agencies report 'Neutron Irradiation Embrittlement of Reactor Pressure Vessel Steels' of 1975, it was decided that another report on this broad subject would be of use. In this report, background and contemporary views on specially identified areas of the subject are considered as self-contained chapters, written by experts. Chapter 11 deals with thermal annealing of an embrittled reactor pressure vessel. Anneal procedures for vessels from both the US and the former USSR are mentioned schematically, wet anneals at lower temperature and dry anneals above RPV design temperatures are investigated. It is shown that heat treatment is a means of recovering mechanical properties which were degraded by neutron radiation exposure, thus assuring reactor pressure vessel compliance with regulatory requirements

  18. Solvent vapor annealing of an insoluble molecular semiconductor

    KAUST Repository

    Amassian, Aram

    2010-01-01

    Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

  19. Ionic conductivity of LISICON solid solutions, Li 2+2 xZn 1- xGeO 4

    Science.gov (United States)

    Bruce, P. G.; West, A. R.

    1982-10-01

    The conductivity of LISICON γII-type solid solutions of general formula Li 2+2 xZn 1- xGeO 4 (-0.36 class of Li + ion conductors, was measured over the temperature range ˜25 to 300°C. Conductivities appear to be very composition dependent near the stoichiometric composition x = 0, but less so in the range 0.15 ≲ x ≲ 0.87. It is shown that interstitial Li + ions rather than cation vacancies give rise to high conductivities. The solid electrolyte properties and possible applications of the solid solutions are evaluated. The LISICON composition, x = 0.75, decomposes readily above ˜300°C by precipitation of Li 4GeO 4, thereby limiting its possible usefulness, but compositions in the range x = 0.45 to 0.55 appear to be stable at all temperatures. However, irreversible decreases in conductivity (aging effects) occur on annealing, even at room temperature. The conductivity data of quenched samples give linear Arrhenius plots, but with anomalously high prefactors, over the range ˜25 to 130°C; at higher temperatures reversible changes of slope to lower activation energies occur. A variety of minor polymorphic transitions occur on annealing γII solid solutions below ˜300°C and their relationship to the conductivity was also determined.

  20. Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond

    Energy Technology Data Exchange (ETDEWEB)

    Derry, T.E. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa)], E-mail: Trevor.Derry@wits.ac.za; Nshingabigwi, E.K. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa); Department of Physics, National University of Rwanda, P.O. Box 117, Huye (Rwanda); Levitt, M. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa); Neethling, J. [DST/NRF CoE-SM and Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Naidoo, S.R. [DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg (South Africa)

    2009-08-15

    It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels 'graphitize' (above about 5.2 x 10{sup 15} ions/cm{sup 2}). The difference in the defect types and their profiles, in the two cases, has never been directly observed. We have succeeded in using cross-section transmission electron microscopy to do so. The experiments were difficult because the specimens must be polished to {approx}40 {mu}m thickness, then implanted on edge and annealed, before final ion beam thinning to electron transparency. The low-damage micrographs reveal some deeply penetrating dislocations, whose existence had been predicted in earlier work.

  1. Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond

    International Nuclear Information System (INIS)

    Derry, T.E.; Nshingabigwi, E.K.; Levitt, M.; Neethling, J.; Naidoo, S.R.

    2009-01-01

    It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels 'graphitize' (above about 5.2 x 10 15 ions/cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been directly observed. We have succeeded in using cross-section transmission electron microscopy to do so. The experiments were difficult because the specimens must be polished to ∼40 μm thickness, then implanted on edge and annealed, before final ion beam thinning to electron transparency. The low-damage micrographs reveal some deeply penetrating dislocations, whose existence had been predicted in earlier work.

  2. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Science.gov (United States)

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  3. Annealing-induced Fe oxide nanostructures on GaAs

    OpenAIRE

    Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

    2005-01-01

    We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

  4. Hydrogen Annealing Of Single-Crystal Superalloys

    Science.gov (United States)

    Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

    1995-01-01

    Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

  5. Hyperbolic white noise functional solutions of Wick-type stochastic compound KdV-Burgers equations

    International Nuclear Information System (INIS)

    Han Xiu; Xie Yingchao

    2009-01-01

    Variable coefficient and Wick-type stochastic compound KdV-Burgers equations are investigated. By using white noise analysis, Hermite transform and the hyperbolic function method, we obtain a number of Wick versions of hyperbolic white noise functional solutions and hyperbolic function solutions for Wick-type stochastic and variable coefficient compound KdV-Burgers equations, respectively.

  6. Study of defect annealing behaviour in neutron irradiated Cu and Fe using positron annihilation and electrical conductivity

    International Nuclear Information System (INIS)

    Eldrup, M.; Singh, B.N.

    2000-01-01

    To compare the defect accumulation and the annealing behaviour in an fcc and a bcc metal, OFHC-Cu and pure Fe were neutron irradiated at 100 deg. C to a fluence of 1.5 x 10 24 n/m 2 , (E > 1 MeV). Isochronal annealing was carried out and the annealing behaviour followed by positron annihilation spectroscopy (PAS) as well as electrical conductivity measurements. The results for the two specimens in the as-irradiated state are very different. In Cu the defect positron lifetime is characteristic of single vacancies, very small vacancy clusters or stacking fault tetrahedra, while in Fe the defect lifetimes confirm the presence of micro-voids and voids. The electrical conductivity, on the other hand does not discriminate between the two types of damage in the irradiated specimens. During annealing of the irradiated Fe below stage V, the average void size grows by migration and coalescence of the micro-voids and voids. At and above stage V the void density decreases and the voids finally anneal out at ∼500 deg. C. In contrast, the annealing of irradiated Cu below stage V does not yield any evidence for the evolution of micro-voids or voids. The implications of these results are discussed. One conclusion is that neutron irradiation below stage V causes higher void swelling in bcc iron than in fcc copper

  7. REPAIR SHOP JOB SCHEDULING WITH PARALLEL OPERATORS AND MULTIPLE CONSTRAINTS USING SIMULATED ANNEALING

    Directory of Open Access Journals (Sweden)

    N. Shivasankaran

    2013-04-01

    Full Text Available Scheduling problems are generally treated as NP andash; complete combinatorial optimization problems which is a multi-objective and multi constraint one. Repair shop Job sequencing and operator allocation is one such NP andash; complete problem. For such problems, an efficient technique is required that explores a wide range of solution space. This paper deals with Simulated Annealing Technique, a Meta - heuristic to solve the complex Car Sequencing and Operator Allocation problem in a car repair shop. The algorithm is tested with several constraint settings and the solution quality exceeds the results reported in the literature with high convergence speed and accuracy. This algorithm could be considered as quite effective while other heuristic routine fails.

  8. INTRODUCCIÓN DE ELEMENTOS DE MEMORIA EN EL MÉTODO SIMULATED ANNEALING PARA RESOLVER PROBLEMAS DE PROGRAMACIÓN MULTIOBJETIVO DE MÁQUINAS PARALELAS INTRODUCTION OF MEMORY ELEMENTS IN SIMULATED ANNEALING METHOD TO SOLVE MULTIOBJECTIVE PARALLEL MACHINE SCHEDULING PROBLEMS

    Directory of Open Access Journals (Sweden)

    Felipe Baesler

    2008-12-01

    Full Text Available El presente artículo introduce una variante de la metaheurística simulated annealing, para la resolución de problemas de optimización multiobjetivo. Este enfoque se demonina MultiObjective Simulated Annealing with Random Trajectory Search, MOSARTS. Esta técnica agrega al algoritmo Simulated Annealing elementos de memoria de corto y largo plazo para realizar una búsqueda que permita balancear el esfuerzo entre todos los objetivos involucrados en el problema. Los resultados obtenidos se compararon con otras tres metodologías en un problema real de programación de máquinas paralelas, compuesto por 24 trabajos y 2 máquinas idénticas. Este problema corresponde a un caso de estudio real de la industria regional del aserrío. En los experimentos realizados, MOSARTS se comportó de mejor manera que el resto de la herramientas de comparación, encontrando mejores soluciones en términos de dominancia y dispersión.This paper introduces a variant of the metaheuristic simulated annealing, oriented to solve multiobjective optimization problems. This technique is called MultiObjective Simulated Annealing with Random Trajectory Search (MOSARTS. This technique incorporates short an long term memory concepts to Simulated Annealing in order to balance the search effort among all the objectives involved in the problem. The algorithm was tested against three different techniques on a real life parallel machine scheduling problem, composed of 24 jobs and two identical machines. This problem represents a real life case study of the local sawmill industry. The results showed that MOSARTS behaved much better than the other methods utilized, because found better solutions in terms of dominance and frontier dispersion.

  9. Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n-type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n-type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping

  10. Vessel annealing. Will it become a routine procedure?

    International Nuclear Information System (INIS)

    Davies, M.

    1995-01-01

    The effect of neutron radiation on the reactor pressure vessel and the influence of annealing performed to eliminate this effect are explained. Some practical examples are given. A simple heat treatment at 450 degC for 168 h is sufficient to eliminate a major fraction of the radiation effect in the displacement of the transition temperature from the brittle state to the tough state. Some observations indicate that at this temperature, excessive energy recovery takes place at the upper toughness limit in the Charpy diagram. The annealing furnace manufactured by the SKODA company is described. The furnace consists of heating elements in 13 zones and 5 heating sections. The maximum power of each element is 75 kW, the total power of the furnace is 975 kW. The annealing procedure and its results are briefly outlined for the reactor pressure vessel at unit 2 of the Jaslovske Bohunice NPP. Reactor pressure vessel annealing is proposed for the Marble Hill NPP which has been shut down. Preparatory activities for annealing are also under way at the Loviisa NPP. (J.B.)

  11. MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Guillaume Wantz

    2012-11-01

    Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

  12. Creep properties of annealed Zr-Nb-O and stress-relieved Zr-Nb-Sn-Fe cladding tubes and their performance comparison

    International Nuclear Information System (INIS)

    Ko, S.; Hong, S.I.; Kim, K.T.

    2010-01-01

    Creep properties of annealed Zr-Nb-O and stress-relieved Zr-Nb-Sn-Fe cladding tubes were studied and compared. The creep rates of the annealed Zr-Nb-O alloy were found to be greater than those of the stress-relieved Zr-Nb-Sn-Fe alloy. Zr-Nb-O alloy was found to have stress exponents of 5-7 independent of stress level whereas Zr-Nb-Sn-Fe alloy exhibited the transition of the stress exponent from 6.5 to 7.5 in the lower stress region to ∼4.2 in the higher stress region. The reduction of stress exponent at high stresses in Zr-Nb-Sn-Fe can be explained in terms of the dynamic solute-dislocation effect caused by Sn atoms. The constancy of stress exponent without the transition was observed in Zr-Nb-O alloy, supporting that the decrease of the stress exponent with increasing stress in Zr-Nb-Sn-Fe is associated with Sn atoms. The difference of creep life between annealed Zr-Nb-O and stress-relieved Zr-Nb-Sn-Fe is not large considering the large difference of strength level between annealed Zr-Nb-O and annealed stress-relieved Zr-Nb-Sn-Fe. The better-than-expected creep life of annealed Zr-Nb-O alloy can be attributable to the combined effects of creep ductility enhancement associated with softening and the decreased contribution of grain boundary diffusion due to the increased grain size.

  13. Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 2. Detailed technical description of the work. Final report

    International Nuclear Information System (INIS)

    Mager, T.R.

    1982-11-01

    Program materials were three weldments fabricated from A533 Grade B class 1 plate material and Mn Mo Ni weld wire. Specimens fabricated from the three submerged arc weldments included Type A Charpy V-notch impact, small size tensile, and 1/2T compact tension specimens. After encapsulation, the specimens were irradiated at the UVAR to two fluence levels, 8 x 10 18 n/cm 2 and 1.5 x 10 19 n/cm 2 (E > 1 MeV). Specimens were subjected to sequences of irradiation and anneals and then tested. Metallurgial/mechanistic analyses were also performed. It was concluded that excellent recovery of all properties could be achieved by annealing at greater than or equal to 850 0 F (454 0 C) for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the expected rate. Several drawbacks were identified for wet thermal annealing. A conceptual dry in-situ thermal annealing procedure was developed for thermal annealing embrittled reactor vessels

  14. A dynamic programming–enhanced simulated annealing algorithm for solving bi-objective cell formation problem with duplicate machines

    Directory of Open Access Journals (Sweden)

    Mohammad Mohammadi

    2015-04-01

    Full Text Available Cell formation process is one of the first and the most important steps in designing cellular manufacturing systems. It consists of identifying part families according to the similarities in the design, shape, and presses of parts and dedicating machines to each part family based on the operations required by the parts. In this study, a hybrid method based on a combination of simulated annealing algorithm and dynamic programming was developed to solve a bi-objective cell formation problem with duplicate machines. In the proposed hybrid method, each solution was represented as a permutation of parts, which is created by simulated annealing algorithm, and dynamic programming was used to partition this permutation into part families and determine the number of machines in each cell such that the total dissimilarity between the parts and the total machine investment cost are minimized. The performance of the algorithm was evaluated by performing numerical experiments in different sizes. Our computational experiments indicated that the results were very encouraging in terms of computational time and solution quality.

  15. Texture Analysis using The Neutron Diffraction Method on The Non Standardized Austenitic Steel Process by Machining,Annealing, and Rolling

    Directory of Open Access Journals (Sweden)

    Tri Hardi Priyanto

    2016-04-01

    Full Text Available Austenitic steel is one type of stainless steel which is widely used in the industry. Many studies on  austenitic stainless steel have been performed to determine the physicalproperties using various types of equipment and methods. In this study, the neutron diffraction method is used to characterize the materials which have been made from  minerals extracted from the mines in Indonesia. The materials consist of a granular ferro-scrap, nickel, ferro-chrome, ferro-manganese, and ferro-silicon added with a little titanium. Characterization of the materials was carried out in threeprocesses, namely: machining, annealing, and rolling. Experimental results obtained from the machining process generally produces a texture in the 〈100〉direction. From the machining to annealing process, the texture index decreases from 3.0164 to 2.434.Texture strength in the machining process (BA2N sample is  8.13 mrd and it then decreases to 6.99 in the annealing process (A2DO sample. In the annealing process the three-component texture appears, cube-on-edge type texture{110}〈001〉, cube-type texture {001}〈100〉, and brass-type {110}〈112〉. The texture is very strong leading to the direction of orientation {100}〈001〉, while the {011}〈100〉is weaker than that of the {001}, and texture withorientation {110}〈112〉is weak. In the annealing process stress release occurred, and this was shown by more randomly pole compared to stress release by the machining process. In the rolling process a brass-type texture{110}〈112〉with a spread towards the goss-type texture {110}〈001〉 appeared,  and  the  brass  component  is markedly  reinforced  compared  to  the undeformed state (before rolling. Moreover, the presence of an additional {110} component was observed at the center of the (110 pole figure. The pole density of three components increases withthe increasing degree of thickness reduction. By increasing degrees

  16. Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb{sub 0.95}La{sub 0.05}Zr{sub 0.54}Ti{sub 0.46}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Batra, Vaishali [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States); Ramana, C.V. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States)

    2016-08-30

    Highlights: • Influence of post-deposition annealing temperature (T{sub a} = 550 and 750 °C) on the chemical valence state and crystalline quality of PLZT thin films was investigated. • XPS analyses demonstrated the shift in binding energies of the constituent atoms which indicated change in chemical state with the change in T{sub a}. • Raman spectra revealed shift in optical modes with the change in T{sub a} indicating the change in phase and crystallinity in the films. • Higher T{sub a} (750 °C) resulted in PLZT films with perovskite structure, nanocrystalline morphology, and better chemical homogeneity. - Abstract: We report the effect of post deposition annealing temperature (T{sub a} = 550 and 750 °C) on the surface morphology, chemical bonding and structural development of lanthanum doped lead zirconate titanate (Pb{sub 0.95}La{sub 0.05}Zr{sub 0.54}Ti{sub 0.46}O{sub 3}; referred to PLZT) thin films prepared using chemical solution deposition method. Atomic force microscopy demonstrates formation of nanocrystallites in the film annealed at T{sub a} = 750 °C. X-ray photoelectron spectroscopy (XPS) analyses indicate that the binding energies (BE) of the Pb 4f, Zr 3d, and Ti 2p doublet experience a positive energy shift at T{sub a} = 750 °C, whereas the BE of O 1s and La 3d doublet show a negative shift with respect to the BE of the films annealed at T{sub a} = 750 °C. Thermal induced crystallization and chemical modification is evident from XPS results. The Ar+ sputtering of the films reveals change in oxidation state and chemical bonding between the constituent atoms, with respect to T{sub a}. Raman spectroscopy used to study phonon-light interactions show shift in longitudinal and transverse optical modes with the change in T{sub a}, confirming the change in phase and crystallinity of these films. The results suggest annealing at T{sub a} = 750 °C yield crystalline perovskite PLZT films, which is essential to obtain photovoltaic response from

  17. Calculation of temperature fields formed in induction annealing of closing welded joint of jacket of steam generator for WWER 440 type nuclear power plant using ICL 2960 computer

    International Nuclear Information System (INIS)

    Sajnar, P.; Fiala, J.

    1983-01-01

    The problems are discussed of the mathematical description and simulation of temperature fields in annealing the closing weld of the steam generator jacket of the WWER 440 nuclear power plant. The basic principles are given of induction annealing, the method of calculating temperature fields is indicated and the mathematical description is given of boundary conditions on the outer and inner surfaces of the steam generator jacket for the computation of temperature fields arising during annealing. Also described are the methods of determining the temperature of exposed parts of heat exchange tubes inside the steam generator and the technical possibilities are assessed of the annealing equipment from the point of view of its computer simulation. Five alternatives are given for the computation of temperature fields in the area around the weld for different boundary conditions. The values are given of maximum differences in the temperatures of the metal in the annealed part of the steam generator jacket which allow the assessment of individual computation variants, this mainly from the point of view of observing the course of annealing temperature in the required width of the annealed jacket of the steam generator along both sides of the closing weld. (B.S.)

  18. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    International Nuclear Information System (INIS)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  19. Growth and characterization of ZnO films deposited by chemical bath and annealed by microwaves (CBD-A{mu}W)

    Energy Technology Data Exchange (ETDEWEB)

    DIaz-Reyes, J [CIBA-IPN, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Martinez-Juarez, J; Garcia, M L; Galeazzi, R [CIDS-ICUAP, BUAP, 14 Sur y San Claudio S/N, CU. Edif. No. 137, Col. San Manuel, Puebla, Puebla 72570 (Mexico); Juarez, G, E-mail: jdiazr2001@yahoo.com [DIE-SEES, CINVESTAV-IPN, A. P. 14-740, Mexico, D. F. 07000 (Mexico)

    2010-06-15

    A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.

  20. High-voltage electron-microscope investigation of point-defect agglomerates in irradiated copper during in-situ annealing

    International Nuclear Information System (INIS)

    Jaeger, W.; Urban, K.; Frank, W.

    1980-01-01

    Thin copper foils were irradiated with 650 keV electrons at 10 K in a high-voltage electron microscope (HVEM) to doses phi in the range 2 x 10 23 electrons/m 2 approximately 25 electrons /m 2 and then annealed in situ up to room temperature and outside the HVEM between room temperature and 470 K. During irradiation visible defect clusters were formed only at phi >= 2.5 x 10 24 electrons/m 2 . At smaller doses defect clusters became visible after annealing at 50 K. Between 50 K and 120 K further clusters, mainly dislocation loops on brace111 planes, appeared. Above 120 K, particularly between 160 K and 300 K, some of the dislocation loops became glissile. They glided out of the specimens or agglomerated to larger clusters of frequently complex shapes. As a consequence between 160 K and 300 K the cluster density decreased strongly, whereas the mean cluster size increased monotonously through the entire range of annealing temperatures covered. Contrast analyses between 180 K and 400 K revealed that the great majority of the dislocation loops were of interstitial type. At 470 K a new type of small clusters emerged, presumably of vacancy type. These observations are compared with other studies on electron-irradiated copper and with the current models of radiation damage in metals. (author)

  1. Solution-processed copper-nickel nanowire anodes for organic solar cells

    Science.gov (United States)

    Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

    2014-05-01

    This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

  2. Physical nature of structural and phase transformations in Cu-Al α solid solutions upon low-temperature irradiation and subsequent annealing

    Science.gov (United States)

    Petrenko, P. V.; Kulish, N. P.; Mel'nikova, N. A.; Grabovskii, Yu. E.

    2013-12-01

    Methods of X-ray diffraction analysis and measurements of residual resistivity have been used to study effects of electron irradiation in the temperature range of 250-330 K on the structural and phase state of the Cu-15 at % Al solid solution. The results obtained are explained by the presence in the Cu-Al alloys of an inhomogeneous short-range order of two types, i.e., low-temperature, α2 type; and high-temperature, γ2 type.

  3. Irradiation embrittlement and optimisation of annealing

    International Nuclear Information System (INIS)

    1993-01-01

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

  4. Irradiation embrittlement and optimisation of annealing

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-31

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects.

  5. A parallel simulated annealing algorithm for standard cell placement on a hypercube computer

    Science.gov (United States)

    Jones, Mark Howard

    1987-01-01

    A parallel version of a simulated annealing algorithm is presented which is targeted to run on a hypercube computer. A strategy for mapping the cells in a two dimensional area of a chip onto processors in an n-dimensional hypercube is proposed such that both small and large distance moves can be applied. Two types of moves are allowed: cell exchanges and cell displacements. The computation of the cost function in parallel among all the processors in the hypercube is described along with a distributed data structure that needs to be stored in the hypercube to support parallel cost evaluation. A novel tree broadcasting strategy is used extensively in the algorithm for updating cell locations in the parallel environment. Studies on the performance of the algorithm on example industrial circuits show that it is faster and gives better final placement results than the uniprocessor simulated annealing algorithms. An improved uniprocessor algorithm is proposed which is based on the improved results obtained from parallelization of the simulated annealing algorithm.

  6. Topical problems of crackability in weld annealing of low-alloyed pressure vessel steels

    International Nuclear Information System (INIS)

    Holy, M.

    1977-01-01

    The following method was developed for determining annealing crackability: A sharp notch was made in the middle of the bodies of rods imitated in a welding simulator. Chucking heads were modified such as to permit chucking a rod in an austenitic block by securing the nut. Prestress was controlled by button-headed screw adapters. The blocks were made of 4 types of austenitic steels with graded thermal expansivity coefficients, all higher than that of the tested low-alloyed steel rod. The blocks with rods were placed in a furnace and heated at a rate of 100 degC/h. As a result of the larger austenite block diameter the rod began to be stretched and at some temperature of more than 500 degC it was pulled apart. The risk of annealing crackability of welded joints may be reduced by the choice of material and melt and by the technology of welding, mainly by the choice of a suitable addition material in whose weld metal the plastic deformation preferably takes place in annealing. (J.P.)

  7. On Global Solutions for the Cauchy Problem of a Boussinesq-Type Equation

    OpenAIRE

    Taskesen, Hatice; Polat, Necat; Ertaş, Abdulkadir

    2012-01-01

    We will give conditions which will guarantee the existence of global weak solutions of the Boussinesq-type equation with power-type nonlinearity $\\gamma {|u|}^{p}$ and supercritical initial energy. By defining new functionals and using potential well method, we readdressed the initial value problem of the Boussinesq-type equation for the supercritical initial energy case.

  8. The influence of vacuum and annealing on the visible luminescence in ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    P R, Chithira; Theresa John, Teny, E-mail: teny@goa.bits-pilani.ac.in

    2017-05-15

    The ZnO nanoparticles synthesized by a simple solution based chemical bath deposition method were characterized using different experimental techniques. Photoluminescence (PL) studies were performed in ambient as well as in vacuum conditions. The emission spectra exhibit two bands corresponding to UV emission at 380 nm and a wide visible luminescence centered at 571 nm due to surface defects in ambient conditions. Under vacuum condition, the spectra show a reduction in the intensity of the wide visible luminescence and an enhancement in the UV emission. These nanoparticles were annealed at high temperatures in air. The wide visible luminescence remains at the same intensity in both ambient and in vacuum condition for the annealed samples indicating that some of the surface adsorbed defects are removed due to annealing. Fourier Transform Infrared Spectroscopy (FTIR) and Electron Spin Resonance (ESR) results reveal the presence of [OH{sup -}] related groups on the surface of the samples. An analysis of the O1s peak in ZnO using X-ray Photoelectron Spectroscopy (XPS) measurement confirms the presence of intrinsic defects such as oxygen related vacancies and adsorbed oxygen species in the sample. Our investigation shows that the green emission observed in ZnO samples is primarily due to oxygen vacancies.

  9. The influence of vacuum and annealing on the visible luminescence in ZnO nanoparticles

    International Nuclear Information System (INIS)

    P R, Chithira; Theresa John, Teny

    2017-01-01

    The ZnO nanoparticles synthesized by a simple solution based chemical bath deposition method were characterized using different experimental techniques. Photoluminescence (PL) studies were performed in ambient as well as in vacuum conditions. The emission spectra exhibit two bands corresponding to UV emission at 380 nm and a wide visible luminescence centered at 571 nm due to surface defects in ambient conditions. Under vacuum condition, the spectra show a reduction in the intensity of the wide visible luminescence and an enhancement in the UV emission. These nanoparticles were annealed at high temperatures in air. The wide visible luminescence remains at the same intensity in both ambient and in vacuum condition for the annealed samples indicating that some of the surface adsorbed defects are removed due to annealing. Fourier Transform Infrared Spectroscopy (FTIR) and Electron Spin Resonance (ESR) results reveal the presence of [OH - ] related groups on the surface of the samples. An analysis of the O1s peak in ZnO using X-ray Photoelectron Spectroscopy (XPS) measurement confirms the presence of intrinsic defects such as oxygen related vacancies and adsorbed oxygen species in the sample. Our investigation shows that the green emission observed in ZnO samples is primarily due to oxygen vacancies.

  10. Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

    International Nuclear Information System (INIS)

    Wang Yanrong; Yang Hong; Xu Hao; Luo Weichun; Qi Luwei; Zhang Shuxiang; Wang Wenwu; Zhu Huilong; Zhao Chao; Chen Dapeng; Ye Tianchun; Yan Jiang

    2017-01-01

    In the process of high- k films fabrication, a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing (PDA) times. The equivalent oxide thickness (EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore, the characteristics of SILC (stress-induced leakage current) for an ultra-thin SiO 2 /HfO 2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. (paper)

  11. Order-disorder transitions in lattice gases with annealed reactive constraints

    Science.gov (United States)

    Dudka, Maxym; Bénichou, Olivier; Oshanin, Gleb

    2018-04-01

    We study equilibrium properties of catalytically-activated reactions taking place on a lattice of adsorption sites. The particles undergo continuous exchanges with a reservoir maintained at a constant chemical potential μ and react when they appear at the neighbouring sites, provided that some reactive conditions are fulfilled. We model the latter in two different ways: in the Model I some fraction p of the bonds connecting neighbouring sites possesses special catalytic properties such that any two As appearing on the sites connected by such a bond instantaneously react and desorb. In the Model II some fraction p of the adsorption sites possesses such properties and neighbouring particles react if at least one of them resides on a catalytic site. For the case of annealed disorder in the distribution of the catalyst, which is tantamount to the situation when the reaction may take place at any point on the lattice but happens with a finite probability p, we provide an exact solution for both models for the interior of an infinitely large Cayley tree—the so-called Bethe lattice. We show that both models exhibit a rich critical behaviour: for the annealed Model I it is characterised by a transition into an ordered state and a re-entrant transition into a disordered phase, which both are continuous. For the annealed Model II, which represents a rather exotic model of statistical mechanics in which interactions of any particle with its environment have a peculiar Boolean form, the transition to an ordered state is always continuous, while the re-entrant transition into the disordered phase may be either continuous or discontinuous, depending on the value of p.

  12. Soliton and periodic solutions for higher order wave equations of KdV type (I)

    International Nuclear Information System (INIS)

    Khuri, S.A.

    2005-01-01

    The aim of the paper is twofold. First, a new ansaetze is introduced for the construction of exact solutions for higher order wave equations of KdV type (I). We show the existence of a class of discontinuous soliton solutions with infinite spikes. Second, the projective Riccati technique is implemented as an alternate approach for obtaining new exact solutions, solitary solutions, and periodic wave solutions

  13. Solving a multi-objective manufacturing cell scheduling problem with the consideration of warehouses using a simulated annealing based procedure

    Directory of Open Access Journals (Sweden)

    Adrián A. Toncovich

    2019-01-01

    Full Text Available The competition manufacturing companies face has driven the development of novel and efficient methods that enhance the decision making process. In this work, a specific flow shop scheduling problem of practical interest in the industry is presented and formalized using a mathematical programming model. The problem considers a manufacturing system arranged as a work cell that takes into account the transport operations of raw material and final products between the manufacturing cell and warehouses. For solving this problem, we present a multiobjective metaheuristic strategy based on simulated annealing, the Pareto Archived Simulated Annealing (PASA. We tested this strategy on two kinds of benchmark problem sets proposed by the authors. The first group is composed by small-sized problems. On these tests, PASA was able to obtain optimal or near-optimal solutions in significantly short computing times. In order to complete the analysis, we compared these results to the exact Pareto front of the instances obtained with augmented ε-constraint method. Then, we also tested the algorithm in a set of larger problems to evaluate its performance in more extensive search spaces. We performed this assessment through an analysis of the hypervolume metric. Both sets of tests showed the competitiveness of the Pareto Archived Simulated Annealing to efficiently solve this problem and obtain good quality solutions while using reasonable computational resources.

  14. A Pseudo-Parallel Genetic Algorithm Integrating Simulated Annealing for Stochastic Location-Inventory-Routing Problem with Consideration of Returns in E-Commerce

    Directory of Open Access Journals (Sweden)

    Bailing Liu

    2015-01-01

    Full Text Available Facility location, inventory control, and vehicle routes scheduling are three key issues to be settled in the design of logistics system for e-commerce. Due to the online shopping features of e-commerce, customer returns are becoming much more than traditional commerce. This paper studies a three-phase supply chain distribution system consisting of one supplier, a set of retailers, and a single type of product with continuous review (Q, r inventory policy. We formulate a stochastic location-inventory-routing problem (LIRP model with no quality defects returns. To solve the NP-hand problem, a pseudo-parallel genetic algorithm integrating simulated annealing (PPGASA is proposed. The computational results show that PPGASA outperforms GA on optimal solution, computing time, and computing stability.

  15. GPU accelerated population annealing algorithm

    Science.gov (United States)

    Barash, Lev Yu.; Weigel, Martin; Borovský, Michal; Janke, Wolfhard; Shchur, Lev N.

    2017-11-01

    Population annealing is a promising recent approach for Monte Carlo simulations in statistical physics, in particular for the simulation of systems with complex free-energy landscapes. It is a hybrid method, combining importance sampling through Markov chains with elements of sequential Monte Carlo in the form of population control. While it appears to provide algorithmic capabilities for the simulation of such systems that are roughly comparable to those of more established approaches such as parallel tempering, it is intrinsically much more suitable for massively parallel computing. Here, we tap into this structural advantage and present a highly optimized implementation of the population annealing algorithm on GPUs that promises speed-ups of several orders of magnitude as compared to a serial implementation on CPUs. While the sample code is for simulations of the 2D ferromagnetic Ising model, it should be easily adapted for simulations of other spin models, including disordered systems. Our code includes implementations of some advanced algorithmic features that have only recently been suggested, namely the automatic adaptation of temperature steps and a multi-histogram analysis of the data at different temperatures. Program Files doi:http://dx.doi.org/10.17632/sgzt4b7b3m.1 Licensing provisions: Creative Commons Attribution license (CC BY 4.0) Programming language: C, CUDA External routines/libraries: NVIDIA CUDA Toolkit 6.5 or newer Nature of problem: The program calculates the internal energy, specific heat, several magnetization moments, entropy and free energy of the 2D Ising model on square lattices of edge length L with periodic boundary conditions as a function of inverse temperature β. Solution method: The code uses population annealing, a hybrid method combining Markov chain updates with population control. The code is implemented for NVIDIA GPUs using the CUDA language and employs advanced techniques such as multi-spin coding, adaptive temperature

  16. Unraveling Quantum Annealers using Classical Hardness

    Science.gov (United States)

    Martin-Mayor, Victor; Hen, Itay

    2015-01-01

    Recent advances in quantum technology have led to the development and manufacturing of experimental programmable quantum annealing optimizers that contain hundreds of quantum bits. These optimizers, commonly referred to as ‘D-Wave’ chips, promise to solve practical optimization problems potentially faster than conventional ‘classical’ computers. Attempts to quantify the quantum nature of these chips have been met with both excitement and skepticism but have also brought up numerous fundamental questions pertaining to the distinguishability of experimental quantum annealers from their classical thermal counterparts. Inspired by recent results in spin-glass theory that recognize ‘temperature chaos’ as the underlying mechanism responsible for the computational intractability of hard optimization problems, we devise a general method to quantify the performance of quantum annealers on optimization problems suffering from varying degrees of temperature chaos: A superior performance of quantum annealers over classical algorithms on these may allude to the role that quantum effects play in providing speedup. We utilize our method to experimentally study the D-Wave Two chip on different temperature-chaotic problems and find, surprisingly, that its performance scales unfavorably as compared to several analogous classical algorithms. We detect, quantify and discuss several purely classical effects that possibly mask the quantum behavior of the chip. PMID:26483257

  17. Mechanical behavior of multipass welded joint during stress relief annealing

    International Nuclear Information System (INIS)

    Ueda, Yukio; Fukuda, Keiji; Nakacho, Keiji; Takahashi, Eiji; Sakamoto, Koichi.

    1978-01-01

    An investigation into mechanical behavior of a multipass welded joint of a pressure vessel during stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analysis, the thermal elastic-plastic creep theory developed by the authors was applied. The behavior of multipass welded joints during the entire thermal cycle, from welding to stress relief annealing, was consistently analyzed by this theory. The results of the analysis show a good, fundamentally coincidence with the experimental findings. The outline of the results and conclusions is as follows. (1) In the case of the material (2 1/4Cr-1Mo steel) furnished in this study, the creep strain rate during stress relief annealing below 575 0 C obeys the strain-hardening creep law using the transient creep and the one above 575 0 C obeys the power creep law using the stational creep. (2) In the transverse residual stress (σsub(x)) distribution after annealing, the location of the largest tensile stress on the top surface is about 15 mm away from the toe of weld, and the largest at the cross section is just below the finishing bead. These features are similar to those of welding residual stresses. But the stress distribution after annealing is smoother than one from welding. (3) The effectiveness of stress relief annealing depends greatly on the annealing temperature. For example, most of residual stresses are relieved at the heating stage with a heating rate of 30 0 C/hr. to 100 0 C/hr. if the annealing temperature is 650 0 C, but if the annealing temperature is 550 0 C, the annealing is not effective even with a longer holding time. (4) In the case of multipass welding residual stresses studied in this paper, the behaviors of high stresses during annealing are approximated by ones during anisothermal relaxation. (auth.)

  18. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  19. Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

    International Nuclear Information System (INIS)

    Jaksic, A.B.; Pejovic, M.M.; Ristic, G.S.

    1999-01-01

    The paper presents results of isothermal and isochronal annealing experiments on several types of gamma-ray irradiated commercial N- and P-channel power VDMOSFETs. Transistors were characterized for their threshold voltage shift and densities of radiation-induced oxide-trap charge and interface traps. The results show that the temperature enhances interface trap formation and oxide-trap charge decay rates, but also contributes to the passivation of interface traps. The study demonstrates that formation and passivation of interface traps are simultaneous processes. At certain conditions (lower temperature and/or positive bias) interface-trap formation dominates. Oppositely, at other conditions (higher temperature and/or negative bias) passivation is predominant. However at some conditions there is a complex interplay between formation and passivation of interface traps, resulting in interface traps increase followed by decrease at later annealing times. No model for interface trap post-irradiation behavior can explain this effect better than the recently proposed H-W model

  20. On the exact solutions of high order wave equations of KdV type (I)

    Science.gov (United States)

    Bulut, Hasan; Pandir, Yusuf; Baskonus, Haci Mehmet

    2014-12-01

    In this paper, by means of a proper transformation and symbolic computation, we study high order wave equations of KdV type (I). We obtained classification of exact solutions that contain soliton, rational, trigonometric and elliptic function solutions by using the extended trial equation method. As a result, the motivation of this paper is to utilize the extended trial equation method to explore new solutions of high order wave equation of KdV type (I). This method is confirmed by applying it to this kind of selected nonlinear equations.

  1. Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian [South China University of Technology, School of Materials Science and Engineering (China); Zhou, Xiao; Qin, Donghuan, E-mail: qindh@scut.edu.cn; Wu, Hongbin [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China); Xia, Yuxin; Hou, Lintao [Jinan University, College of Science and Engineering (China); Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China)

    2013-11-15

    CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO{sub x}/Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl{sub 2} annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl{sub 2} annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl{sub 2}-annealing conditions (370 °C CdCl{sub 2} annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl{sub 2}-annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V{sub OC} of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage.

  2. Examination of the effect of the annealing cation on higher order structures containing guanine or isoguanine repeats

    Science.gov (United States)

    Pierce, Sarah E.; Wang, Junmei; Jayawickramarajah, Janarthanan; Hamilton, Andrew D.; Brodbelt, Jennifer S.

    2010-01-01

    Isoguanine (2-oxo-6-amino-guanine), a natural but non-standard base, exhibits unique self-association properties compared to its isomer, guanine, and results in formation of different higher order DNA structures. In this work, the higher order structures formed by oligonucleotides containing guanine repeats or isoguanine repeats after annealing in solutions containing various cations are evaluated by electrospray ionization mass spectrometry (ESI-MS) and circular dichroism (CD) spectroscopy. The guanine-containing strand (G9) consistently formed quadruplexes upon annealing, whereas the isoguanine strand (Ig9) formed both pentaplexes and quadruplexes depending on the annealing cation. Quadruplex formation with G9 showed some dependence on the identity of the cation present during annealing with high relative quadruplex formation detected with six of ten cations. Analogous annealing experiments with Ig9 resulted in complex formation with all ten cations, and the majority of the resulting complexes were pentaplexes. CD results indicated most of the original complexes survived the desalting process necessary for ESI-MS analysis. In addition, several complexes, especially the pentaplexes, were found to be capable of cation exchange with ammonium ions. Ab initio calculations were conducted for isoguanine tetrads and pentads coordinated with all ten cations to predict the most energetically stable structures of the complexes in the gas phase. The observed preference of forming quadruplexes versus pentaplexes as a function of the coordinated cation can be interpreted by the calculated reaction energies of both the tetrads and pentads in combination with the distortion energies of tetrads. PMID:19746468

  3. Effect of annealing on properties of Mg doped Zn-ferrite nanoparticles

    Directory of Open Access Journals (Sweden)

    K. Nadeem

    2015-04-01

    Full Text Available A comparison of structural and magnetic properties of as-prepared and annealed (900 °C Mg doped Zn ferrite nanoparticles (Zn1−xMgxFe2O4, with x=0, 0.1, 0.2, 0.3, 0.4 and 0.5 is presented. X-ray diffraction (XRD studies confirmed the cubic spinel structure for both the as-prepared and annealed nanoparticles. The average crystallite size and lattice parameter were increased by annealing. Scanning electron microscopy (SEM images also showed that the average particle size increased after annealing. Fourier transform infrared spectroscopy (FTIR also confirmed the spinel structure for both series of nanoparticles. For both annealed and as-prepared nanoparticles, the O–Mtet.–O vibrational band shifts towards higher wave numbers with increased Mg concentration due to cationic rearrangement on the lattice sites. Magnetization studies revealed an anomalous decreasing magnetization for the annealed nanoparticles which is also ascribed to cationic rearrangement on the lattice sites after annealing. The measurement of coercivity showed a decreasing trend by annealing due to the increased nanoparticle size and better crystallinity.

  4. Embrittlement recovery due to annealing of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

    1996-01-01

    Embrittlement of reactor pressure vessels (RPVs) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. Although such an annealing process has not been applied to any commercial plants in the United States, one US Army reactor, the BR3 plant in Belgium, and several plants in eastern Europe have been successfully annealed. All available Charpy annealing data were collected and analyzed in this project to develop quantitative models for estimating the recovery in 30 ft-lb (41 J) Charpy transition temperature and Charpy upper shelf energy over a range of potential annealing conditions. Pattern recognition, transformation analysis, residual studies, and the current understanding of the mechanisms involved in the annealing process were used to guide the selection of the most sensitive variables and correlating parameters and to determine the optimal functional forms for fitting the data. The resulting models were fitted by nonlinear least squares. The use of advanced tools, the larger data base now available, and insight from surrogate hardness data produced improved models for quantitative evaluation of the effects of annealing. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and the surrogate hardness data base. The standard errors of the resulting recovery models relative to calibration data are comparable to the uncertainty in unirradiated Charpy data. This work also demonstrates that microhardness recovery is a good surrogate for transition temperature shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes

  5. Annealing effect on restoration of irradiation steel properties

    International Nuclear Information System (INIS)

    Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

    1986-01-01

    The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

  6. Annealing of the BR3 reactor pressure vessel

    International Nuclear Information System (INIS)

    Fabry, A.; Motte, F.; Stiennon, G.; Debrue, J.; Gubel, P.; Van de Velde, J.; Minsart, G.; Van Asbroeck, P.

    1985-01-01

    The pressure vessel of the Belgian BR-3 plant, a small (11 MWe) PWR presently used for fuel testing programs and operated since 1962, was annealed during March, 1984. The anneal was performed under wet conditions for 168 hours at 650 0 F with core removal and within plant design margins justification for the anneal, summary of plant characteristics, description of materials sampling, summary of reactor physics and dosimetry, development of embrittlement trend curves, hypothesized pressurized and overcooling thermal shock accidents, and conclusions are provided in detail

  7. Manipulation of magnetic properties of glass-coated microwires by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, A., E-mail: arkadi.joukov@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Chichay, K. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Talaat, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); Rodionova, V. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); National University of Science and Technology (MISIS), 119049 Moscow (Russian Federation); Blanco, J.M. [Dpto. Física Aplicada, EUPDS Basque Country University UPV/EHU (Spain); Ipatov, M.; Zhukova, V. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain)

    2015-06-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect.

  8. Manipulation of magnetic properties of glass-coated microwires by annealing

    International Nuclear Information System (INIS)

    Zhukov, A.; Chichay, K.; Talaat, A.; Rodionova, V.; Blanco, J.M.; Ipatov, M.; Zhukova, V.

    2015-01-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect

  9. Propagating self-sustained annealing of radiation-induced interstitial complexes

    International Nuclear Information System (INIS)

    Bokov, P M; Selyshchev, P A

    2016-01-01

    A propagating self-sustained annealing of radiation induced defects as a result of thermal-concentration instability is studied. The defects that are considered in the model are complexes. Each of them consists of one atom of impunity and of one interstitial atom. Crystal with defects has extra energy which is transformed into heat during defect annealing. Simulation of the auto-wave of annealing has been performed. The front and the speed of the auto-wave have been obtained. It is shown that annealing occurs in a narrow region of time and space. There are two kinds of such annealing behaviour. In the first case the speed of the auto-wave oscillates near its constant mean value and the front of temperature oscillates in a complex way. In the second case the speed of propagation is constant and fronts of temperature and concentration look like sigmoid functions. (paper)

  10. Effect of annealing temperature on physical properties of solution processed nickel oxide thin films

    Science.gov (United States)

    Sahoo, Pooja; Thangavel, R.

    2018-05-01

    In this report, NiO thin films were prepared at different annealing temperatures from nickel acetate precursor by sol-gel spin coating method. These films were characterized by different analytical techniques to obtain their structural, optical morphological and electrical properties using X-ray diffractometer (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis NIR double beam spectrophotometer and Keithley 2450 source meter respectively. FESEM images clearly indicates the formation of a homogenous and porous films. Due to their porosity, they can be used in sensing applications. The optical absorption spectra elucidated that the films are highly transparent and have a suitable band gap which are in similar agreement with earlier reports. The current enhancement under illumination shows the suitability of nanostructured NiO thin films in its application in photovoltaics.

  11. Chaotic annealing with hypothesis test for function optimization in noisy environments

    International Nuclear Information System (INIS)

    Pan Hui; Wang Ling; Liu Bo

    2008-01-01

    As a special mechanism to avoid being trapped in local minimum, the ergodicity property of chaos has been used as a novel searching technique for optimization problems, but there is no research work on chaos for optimization in noisy environments. In this paper, the performance of chaotic annealing (CA) for uncertain function optimization is investigated, and a new hybrid approach (namely CAHT) that combines CA and hypothesis test (HT) is proposed. In CAHT, the merits of CA are applied for well exploration and exploitation in searching space, and solution quality can be identified reliably by hypothesis test to reduce the repeated search to some extent and to reasonably estimate performance for solution. Simulation results and comparisons show that, chaos is helpful to improve the performance of SA for uncertain function optimization, and CAHT can further improve the searching efficiency, quality and robustness

  12. On the Electrochemical Behavior of PVD Ti-Coated AISI 304 Stainless Steel in Borate Buffer Solution

    Science.gov (United States)

    Fattah-alhosseini, Arash; Elmkhah, Hassan; Attarzadeh, Farid Reza

    2017-04-01

    This work aims at studying the electrochemical behavior of annealed pure titanium (Ti) and nano-structured (NS) Ti coating in borate buffer solutions. Cathodic arc evaporation was successfully applied to deposit NS Ti coating. Samples were characterized by means of scanning electron microscope and x-ray diffraction. Potentiodynamic polarization tests, electrochemical impedance spectroscopy, and Mott-Schottky analysis were employed to discuss the electrochemical behavior of samples thoroughly. Electrochemical measurements showed that the deposited NS Ti coating offers a superior passivity in borate buffer solutions of pH 9.0 and 9.5. Mott-Schottky analysis revealed that all passive films are of n-type semiconducting nature in these alkaline solutions and the deposition process did not alter the semiconducting type of passive films formed on samples. Additionally, this analysis showed that the NS Ti coating possessed lower levels of donor densities. Finally, all electrochemical tests showed that passive behavior of the NS Ti samples was superior, mainly due to the formation of thicker and less defective passive films.

  13. Effect of the post-annealing temperature on the thermal-decomposed NiOx hole contact layer for perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Yuxiao Guo

    2018-02-01

    Full Text Available A hysteresis-less inverted perovskite solar cell (PSC with power conversion efficiency (PCE of 13.57% was successfully achieved based on the thermal-decomposed NiOx hole contact layer, possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position. Herein, the transparent and high-crystalline NiOx film is prepared by thermal-decomposing of the solution-derived Ni(OH2 film in our study, which is then employed as hole transport layer (HTL of the organic–inorganic hybrid PSCs. Reasonably, the post-annealing treatment, especially for the annealing temperature, could greatly affect the Ni(OH2 decomposition process and the quality of decomposed NiOx nanoparticles. The vital NiOx HTLs with discrepant morphology, crystallinity and transmission certainly lead to a wide range of device performance. As a result, an annealing process of 400∘C/2h significantly promotes the photovoltaic properties of the NiOx layer and the further device performance.

  14. Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

    KAUST Repository

    Al-Jabr, Ahmad

    2016-07-28

    We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6  cm−1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.

  15. Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

    Science.gov (United States)

    Al-Jabr, Ahmad A.; Mishra, Pawan; Majid, Mohammed A.; Ng, Tien Khee; Ooi, Boon S.

    2016-07-01

    We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ˜30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6 cm-1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.

  16. In situ annealing of hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

    2006-01-01

    Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

  17. Effects of post-stress hydrogen annealing on MOS oxides after 60Co irradiation or Fowler-Nordheim injection

    International Nuclear Information System (INIS)

    Saks, N.S.; Stahlbush, R.E.; Mrstik, B.J.; Rendell, R.W.; Klein, R.B.

    1993-01-01

    Changes in interface trap density D it have been determined in MOSFETs as a function of time during hydrogen annealing at 295K. Large increases in D it are observed during H 2 annealing in MOSFETs previously stressed by either 60 Co irradiation or Fowler-Nordheim electron injection. The annealing behavior is very similar for both types of stress, which suggests that the D it creation mechanism involves similar chemistry for hydrogen reactions. Studies of the time dependence of D it creation as a function of MOSFET gate length show that the time dependence is limited primarily by lateral diffusion of molecular hydrogen (H 2 ) through the gate oxide. An activation energy of 0.57 eV, which is consistent with H 2 diffusion, is obtained from the temperature dependence

  18. Isothermal annealing of silicon implanted with 50 keV 10B ions

    International Nuclear Information System (INIS)

    Weidner, B.; Zaschke, G.

    1974-01-01

    Isothermal annealing characteristics of silicon implanted with boron were measured and compared with calculated results. Implantation was performed with 50 keV 10 B ions in the dose range of 7.5 x 10 12 cm -2 to 2.0 x 10 15 cm -2 . Annealing temperatures ranged from 700 to 900 0 C. Maximum annealing time was 10 4 minutes. Annealing time strongly increases with increasing dose and decreasing temperature. Assuming that there is only one activation energy the isothermal annealing curves of constant dose and different temperatures were combined to a reduced annealing curve and the reduced isothermal annealing curve calculated. Starting from first order kinetics, considering the doping profile of boron in silicon and assuming a depth-dependent decay constant the experimentally determined annealing curves could be easily described over the total dose and time range

  19. Magnetic characterization of nanocrystalline Fe{sub 80−x}Cr{sub x}Co{sub 20} (15≤x≤35) alloys during milling and subsequent annealing

    Energy Technology Data Exchange (ETDEWEB)

    Rastabi, Reza Amini; Ghasemi, Ali, E-mail: ali13912001@yahoo.com; Tavoosi, Majid; Sodaee, Tahmineh

    2016-10-15

    Magnetic characterization of nanocrystalline Fe–Cr–Co alloys during milling and annealing process was the goal of this study. To formation of Fe{sub 80−x}Cr{sub x}Co{sub 20} (15≤x≤35) solid solution, different powder mixtures of Fe, Cr and Co elements were mechanically milled in a planetary ball mill. The annealing process was done in as-milled samples at different temperature in the range of 500–640 °C for 2 h. The produced samples were characterized using X-ray diffraction, scanning electron microscopy, differential scanning calorimetry and vibrating sample magnetometer. Performed mechanical alloying in different powder mixtures lead to the formation of Fe–Cr–Co α-phase solid solution with average crystallite sizes of about 10 nm. The produced nanocrystalline alloys exhibit magnetic properties with the coercivity and saturation of magnetization in the range of 110–200 Oe and 150–220 emu/g, respectively. The coercivity of produced alloys after annealing process decreased and reached to about 40–150 Oe. The highest value of coercivity in as-milled and annealed samples was achieved in alloys with higher Cr contents. - Highlights: • Hc and Ms of produced alloys obtained in the range of 110–200 Oe and 150–220 emu/g. • The highest value of Hc in milled and annealed samples was achieved in Fe{sub 45}Cr{sub 35}Co{sub 20}. • Hc of produced alloys after spinodal decomposition decreased to about 40–150 Oe. • The effect of crystalline defects and residual strain on magnetic fields pinning in milled samples is higher than spinodal decomposition in annealed samples. • The highest value of Hc in as-milled and annealed samples was achieved in Fe{sub 45}Cr{sub 35}Co{sub 20}. The coercivity of produced alloys after annealing process decreased and reach to about 40–150 Oe. • The produced nanocrystalline alloys exhibit magnetic properties with the coercivity and saturation of magnetization in the range of 110–200 Oe and 150–220 emu

  20. Surveying problem solution with theory and objective type questions

    CERN Document Server

    Chandra, AM

    2005-01-01

    The book provides a lucid and step-by-step treatment of the various principles and methods for solving problems in land surveying. Each chapter starts with basic concepts and definitions, then solution of typical field problems and ends with objective type questions. The book explains errors in survey measurements and their propagation. Survey measurements are detailed next. These include horizontal and vertical distance, slope, elevation, angle, and direction. Measurement using stadia tacheometry and EDM are then highlighted, followed by various types of levelling problems. Traversing is then explained, followed by a detailed discussion on adjustment of survey observations and then triangulation and trilateration.

  1. First-order design of geodetic networks using the simulated annealing method

    Science.gov (United States)

    Berné, J. L.; Baselga, S.

    2004-09-01

    The general problem of the optimal design for a geodetic network subject to any extrinsic factors, namely the first-order design problem, can be dealt with as a numeric optimization problem. The classic theory of this problem and the optimization methods are revised. Then the innovative use of the simulated annealing method, which has been successfully applied in other fields, is presented for this classical geodetic problem. This method, belonging to iterative heuristic techniques in operational research, uses a thermodynamical analogy to crystalline networks to offer a solution that converges probabilistically to the global optimum. Basic formulation and some examples are studied.

  2. Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba0.5 Sr0.5TiO3Thin Film

    Directory of Open Access Journals (Sweden)

    Irzaman

    2009-01-01

    Full Text Available Thin films 10 % gallium oxide doped barium strontium titanate (BGST and 10 % tantalum oxide doped barium strontium titanate (BTST were prepared on p-type Si (100 substrates using chemical solution deposition (CSD method with 1.00 M precursor. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at 200oC, 240oC, 280oC (low temperature for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films are described by atomic force microscope (AFM method at 5000 nm x 5000 nm area. The rms surface roughness BGST thin films at 5000 nm x 5000 nm area are 0.632 nm, 0.564 nm, 0.487 nm for temperature 200oC, 240oC, 280oC, respectively, whereas the grain size (mean diameter are 238.4 nm, 219.0 nm, 185.1 nm for temperature 200oC, 240oC, 280oC, respectively. In fact, to increase annealing temperature from 200oC to 280oC would result in decreasing the rms roughness and grain size. Therefore, rms roughness and grain size would have the strong correlation annealing temperature.

  3. Some Properties of Solutions for the Sixth-Order Cahn-Hilliard-Type Equation

    Directory of Open Access Journals (Sweden)

    Zhao Wang

    2012-01-01

    Full Text Available We study the initial boundary value problem for a sixth-order Cahn-Hilliard-type equation which describes the separation properties of oil-water mixtures, when a substance enforcing the mixing of the phases is added. We show that the solutions might not be classical globally. In other words, in some cases, the classical solutions exist globally, while in some other cases, such solutions blow up at a finite time. We also discuss the existence of global attractor.

  4. Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistors

    KAUST Repository

    Khan, Hadayat Ullah

    2013-04-10

    We demonstrate a new way to investigate and control the solvent vapor annealing of solution-cast organic semiconductor thin films. Solvent vapor annealing of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) is investigated in situ using quartz crystal microbalance with dissipation (QCM-D) capability, allowing us to monitor both solvent mass uptake and changes in the mechanical rigidity of the film. Using time-resolved grazing incidence wide angle X-ray scattering (GIWAXS) and complementary static atomic force microscopy (AFM), we demonstrate that solvent vapor annealing in the molecular regime can cause significant performance improvements in organic thin film transistors (OTFTs), whereas allowing the solvent to percolate and form a liquid phase results in catastrophic reorganization and dewetting of the film, making the process counterproductive. Using these lessons we devise processing conditions which prevent percolation of the adsorbed solvent vapor molecules for extended periods, thus extending the benefits of solvent vapor annealing and improving carrier mobility by nearly two orders of magnitude. Ultimately, it is demonstrated that QCM-D is a very powerful sensor of the state of the adsorbed solvent as well as the thin film, thus making it suitable for process development as well as in-line process monitoring both in laboratory and in future manufacturing settings. © 2013 American Chemical Society.

  5. Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistors

    KAUST Repository

    Khan, Hadayat Ullah; Li, Ruipeng; Ren, Yi; Chen, Long; Payne, Marcia M.; Bhansali, Unnat Sampatraj; Smilgies, Detlef Matthias; Anthony, John Edward; Amassian, Aram

    2013-01-01

    We demonstrate a new way to investigate and control the solvent vapor annealing of solution-cast organic semiconductor thin films. Solvent vapor annealing of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) is investigated in situ using quartz crystal microbalance with dissipation (QCM-D) capability, allowing us to monitor both solvent mass uptake and changes in the mechanical rigidity of the film. Using time-resolved grazing incidence wide angle X-ray scattering (GIWAXS) and complementary static atomic force microscopy (AFM), we demonstrate that solvent vapor annealing in the molecular regime can cause significant performance improvements in organic thin film transistors (OTFTs), whereas allowing the solvent to percolate and form a liquid phase results in catastrophic reorganization and dewetting of the film, making the process counterproductive. Using these lessons we devise processing conditions which prevent percolation of the adsorbed solvent vapor molecules for extended periods, thus extending the benefits of solvent vapor annealing and improving carrier mobility by nearly two orders of magnitude. Ultimately, it is demonstrated that QCM-D is a very powerful sensor of the state of the adsorbed solvent as well as the thin film, thus making it suitable for process development as well as in-line process monitoring both in laboratory and in future manufacturing settings. © 2013 American Chemical Society.

  6. Investigation of optimum annealing parameters for formation of dip coated Cu{sub 2}ZnSnS{sub 4} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhari, Sushmita; Kannan, P.K.; Dey, Suhash R., E-mail: suhash@iith.ac.in

    2016-08-01

    Cu{sub 2}ZnSnS{sub 4} (CZTS) is most attractive absorber material for inorganic solar cell applications because of its cost effective and ecofriendly nature. To obtain phase pure CZTS film, effects of annealing parameters on synthesis of CZTS thin film are investigated. CZTS films are deposited through dip coating method followed by heat treatment to form crystalline CZTS thin films. Factors influencing the crystallinity, morphology and composition of the films such as annealing temperature, time, rate and atmosphere are studied through X-Ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy and Energy Dispersive X-Ray Spectroscopy. After numerous experiments of synthesis of CZTS in different annealing conditions and its characterization, it is observed that 1.4 eV band gap CZTS thin film of kesterite structure is obtained by annealing the film in nitrogen atmosphere for 60 min at 300 °C with 10 °C/min ramping rate. - Highlights: • Dip coated Cu{sub 2}ZnSnS{sub 4} film is developed using non-hydrazine based precursor solution. • Optimum annealing condition to achieve best crystalline film is studied. • Optimal condition is 300 °C in N{sub 2} atmosphere for 60 min at 10 °C/min ramping rate. • Bandgap of prepared films is 1.4 eV, suitable for solar cell applications.

  7. Annealing temperature effect on self-assembled Au droplets on Si (111).

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

    2013-12-13

    We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

  8. Annealing effects on electron-beam evaporated Al2O3 films

    International Nuclear Information System (INIS)

    Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

    2005-01-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

  9. Annealing effects on electron-beam evaporated Al 2O 3 films

    Science.gov (United States)

    Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

    2005-04-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

  10. Hydration-annealing of chemical radiation damage in calcium nitrate

    International Nuclear Information System (INIS)

    Nair, S.M.K.; James, C.

    1984-01-01

    The effect of hydration on the annealing of chemical radiation damage in anhydrous calcium nitrate has been investigated. Rehydration of the anhydrous irradiated nitrate induces direct recovery of the damage. The rehydrated salt is susceptible to thermal annealing but the extent of annealing is small compared to that in the anhydrous salt. The direct recovery of damage on rehydration is due to enhanced lattice mobility. The recovery process is unimolecular. (author)

  11. Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing

    International Nuclear Information System (INIS)

    Kahen, K.B.; Rajeswaran, G.; Lee, S.T.

    1988-01-01

    A mechanism for the transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post-implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity-enhanced diffusion remains a weak effect

  12. Effect of annealing process on the heterostructure CuO/Cu2O as a highly efficient photocathode for photoelectrochemical water reduction

    Science.gov (United States)

    Du, Fan; Chen, Qing-Yun; Wang, Yun-Hai

    2017-05-01

    CuO/Cu2O photocathodes were successfully prepared via simply annealing the electrodeposited Cu2O on fluoride doped tin oxide (FTO) substrate. They were characterized by X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscope (TEM), UV-vis absorption spectra and X-ray photoelectron spectroscopy (XPS). The results showed that the heterojunction of CuO/Cu2O was formed during the annealing process and presented the nature of p-type semiconductor. The photocurrent density and photoelectrochemical (PEC) stability of the p-type heterostructure CuO/Cu2O photocathode was improved greatly compared with the pure Cu2O, which was greatly affected by annealing time and temperature. The highest photo current density of -0.451 mA/cm2 and highest stability was obtained via annealing at 650 °C for 15 min (at -0.3 V vs. Ag/AgCl), which gave a remarkable improvement than the as-deposited Cu2O (-0.08 mA/cm2). This suggested that the CuO/Cu2O heterojunction facilitated the electron-hole pair separation and improved the photocathode's current and stability.

  13. The relation among the hyperbolic-function-type exact solutions of nonlinear evolution equations

    International Nuclear Information System (INIS)

    Liu Chunping; Liu Xiaoping

    2004-01-01

    First, we investigate the solitary wave solutions of the Burgers equation and the KdV equation, which are obtained by using the hyperbolic function method. Then we present a theorem which will not only give us a clear relation among the hyperbolic-function-type exact solutions of nonlinear evolution equations, but also provide us an approach to construct new exact solutions in complex scalar field. Finally, we apply the theorem to the KdV-Burgers equation and obtain its new exact solutions

  14. Principal and secondary luminescence lifetime components in annealed natural quartz

    International Nuclear Information System (INIS)

    Chithambo, M.L.; Ogundare, F.O.; Feathers, J.

    2008-01-01

    Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to 900 deg. C. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and 200 deg. C. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to 0.68±0.01eV for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at 20 deg. C are constant at about 33μs for annealing temperatures up to 600 0 C but decrease to about 29μs when the annealing temperature is increased to 900 deg. C. In addition, it was found that lifetime components in samples annealed at 800 deg. C are independent of radiation dose in the range 85-1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres

  15. Reduction of thermal quenching of biotite mineral due to annealing

    International Nuclear Information System (INIS)

    Kalita, J.M.; Wary, G.

    2014-01-01

    Graphical abstract: - Highlights: • Thermoluminescence of X-ray irradiate biotite was studied at various heating rates. • Thermal quenching was found to decrease with increase in annealing temperature. • Due to annealing one trap level was vanished and a new shallow trap level generated. • The new trap level contributes low thermally quenched thermoluminescence signal. - Abstract: Thermoluminescence (TL) of X-ray irradiated natural biotite annealed at 473, 573, 673 and 773 K were studied within 290–480 K at various linear heating rates (2, 4, 6, 8 and 10 K/s). A Computerized Glow Curve Deconvolution technique was used to study various TL parameters. Thermal quenching was found to be very high for un-annealed sample, however it decreased significantly with increase in annealing temperature. For un-annealed sample thermal quenching activation energy (W) and pre-exponential frequency factor (C) were found to be W = (2.71 ± 0.05) eV and C = (2.38 ± 0.05) × 10 12 s −1 respectively. However for 773 K annealed sample, these parameters were found to be W = (0.63 ± 0.03) eV, C = (1.75 ± 0.27) × 10 14 s −1 . Due to annealing, the initially present trap level at depth 1.04 eV was vanished and a new shallow trap state was generated at depth of 0.78 eV which contributes very low thermally quenched TL signal

  16. Effect of Annealing on the Thermoluminescence Properties of ZnO Nanophosphor

    Science.gov (United States)

    Kalita, J. M.; Wary, G.

    2017-07-01

    We report the effect of annealing on the thermoluminescence (TL) properties of zinc oxide (ZnO) nanophosphor. The sample was synthesised by a wet chemical process. The characterisation report shows that the size of the grains is within 123.0 nm-160.5 nm. TL measured at 2 K/s from a fresh un-annealed sample irradiated to 60 mGy shows a composite glow curve containing three peaks at 353.2 K, 429.1 K, and 455.3 K. On the other hand, samples annealed at 473 K and 573 K followed by irradiation to 60 mGy do not give TL. However, annealing at 673 K and 773 K followed by irradiation to the same dose produces a glow curve comprising two overlapping peaks at 352.3 K and 370.6 K. In the TL emission spectrum of un-annealed sample, two emission peaks were found in green ( 523 nm) and orange ( 620 nm) regions whereas in annealed samples, only a peak was found in the orange region ( 618 nm). Kinetic analysis shows that the activation energy corresponding to TL peaks at 353.2 K, 429.1 K, and 455.3 K of the un-annealed sample are 0.64 eV, 0.80 eV, and 1.20 eV whereas that of the peaks at 352.3 K and 370.6 K of 673 K and 773 K annealed samples are 0.64 eV and 0.70 eV, respectively. All peaks of un-annealed and annealed samples, except the one at 429.1 K of the un-annealed sample, follow first-order kinetics whereas the peak at 429.1 K follows second-order kinetics. Considering the kinetic and spectral features, an energy band model for ZnO nanophosphor has been proposed.

  17. In-place thermal annealing of nuclear reactor pressure vessels

    International Nuclear Information System (INIS)

    Server, W.L.

    1985-04-01

    Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. The Amry SM-1A test reactor vessel was wet annealed in 1967 at less than 343 0 C (650 0 F), and wet annealing of the Belgian BR-3 reactor vessel at 343 0 C (650 0 F) has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place at temperatures as high as 454 0 C (850 0 F) is feasible, but solvable engineering problems do exist. Economic considerations have not been totally evaluated in assessing the cost-effectiveness of in-place annealing of commercial nuclear vessels. An American Society for Testing and Materials (ASTM) task group is upgrading and revising guide ASTM E 509-74 with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (e.g., the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

  18. Unified model of damage annealing in CMOS, from freeze-in to transient annealing

    International Nuclear Information System (INIS)

    Sander, H.H.; Gregory, B.L.

    Results of an experimental study at 76 0 K, are presented showing that radiation-produced holes in SiO 2 are immobile at this temperature. If an electric field is present in the SiO 2 during low temperature (76 0 K) irradiation to sweep out the mobile electrons, the holes will virtually all be trapped where created and produce a uniform positive charge density in the oxide. These results are the basis for concluding that if a complimentary p,n metal-oxide semiconductor (CMOS) device is irradiated for sufficient time at 76 0 K to build-in an appreciable field, further irradiation with gate bias removed will produce very little additional change in V/sub th/, since the field in the oxide tends to keep all generated electrons in the oxide where they recombine with trapped holes. Hence the hole trapping rate = the hole annihilation rate. The room-temperature annealing following a pulsed gamma exposure occurs in two regimes. The first recovery of V/sub th/ occurs prior to 10 -4 seconds. The magnitude of this very early-time recovery, at room temperature, is oxide-dependent, and oxide process dependent. The rate-of-annealing is what is truly different between a rad-hard and a rad-soft device, since annealing in the hardest devices occurs very quickly at room temperature. (U.S.)

  19. Bernstein Series Solution of a Class of Lane-Emden Type Equations

    Directory of Open Access Journals (Sweden)

    Osman Rasit Isik

    2013-01-01

    Full Text Available The purpose of this study is to present an approximate solution that depends on collocation points and Bernstein polynomials for a class of Lane-Emden type equations with mixed conditions. The method is given with some priori error estimate. Even the exact solution is unknown, an upper bound based on the regularity of the exact solution will be obtained. By using the residual correction procedure, the absolute error can be estimated. Also, one can specify the optimal truncation limit n which gives a better result in any norm. Finally, the effectiveness of the method is illustrated by some numerical experiments. Numerical results are consistent with the theoretical results.

  20. Strain relaxation near high-k/Si interface by post-deposition annealing

    International Nuclear Information System (INIS)

    Emoto, T.; Akimoto, K.; Yoshida, Y.; Ichimiya, A.; Nabatame, T.; Toriumi, A.

    2005-01-01

    We studied the effect of post-deposition annealing on a HfO 2 /Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm 3 grows at the interface between the HfO 2 layer and the substrate during post-deposition annealing. The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO 2 layer