Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

Concentrator-solar-cell development

Science.gov (United States)

Grenon, L.

1982-07-01

A program is described which is a continuation of earlier programs for the development of high-efficiency, low-cost, silicon concentrator solar cells. The base-line process steps and process sequences identified in these earlier contracts were evaluated and specific processes reviewed. In particular, emphasis on the use of Czochralski-grown silicon wafers rather than float-zone wafers were examined. Additionally, a study of the trade-offs between textured and nontextured cells was initiated, and the limits within which the low-cost plated nickel copper metallization can be used in concentrator solar cell applications was identified.

Organic solar cells using CVD-grown graphene electrodes

International Nuclear Information System (INIS)

Kim, Hobeom; Han, Tae-Hee; Lim, Kyung-Geun; Lee, Tae-Woo; Bae, Sang-Hoon; Ahn, Jong-Hyun

2014-01-01

We report on the development of flexible organic solar cells (OSCs) incorporating graphene sheets synthesized by chemical vapor deposition (CVD) as transparent conducting electrodes on polyethylene terephthalate (PET) substrates. A key barrier that must be overcome for the successful fabrication of OSCs with graphene electrodes is the poor-film properties of water-based poly(3,4-ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS) when coated onto hydrophobic graphene surfaces. To form a uniform PEDOT:PSS film on a graphene surface, we added perfluorinated ionomers (PFI) to pristine PEDOT:PSS to create ‘GraHEL’, which we then successfully spin coated onto the graphene surface. We systematically investigated the effect of number of layers in layer-by-layer stacked graphene anode of an OSC on the performance parameters including the open-circuit voltage (V oc ), short-circuit current (J sc ), and fill factor (FF). As the number of graphene layers increased, the FF tended to increase owing to lower sheet resistance, while J sc tended to decrease owing to the lower light absorption. In light of this trade-off between sheet resistance and transmittance, we determined that three-layer graphene (3LG) represents the best configuration for obtaining the optimal power conversion efficiency (PCE) in OSC anodes, even at suboptimal sheet resistances. We finally developed efficient, flexible OSCs with a PCE of 4.33%, which is the highest efficiency attained so far by an OSC with CVD-grown graphene electrodes to the best of our knowledge. (paper)

InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

Energy Technology Data Exchange (ETDEWEB)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Durand, Christophe; Pan, Qing; Monroy, Eva; Eymery, Joel [CEA-CNRS-UJF Group ' ' Nanophysique et semi-conducteurs' ' , CEA/INAC/SP2M, Grenoble (France); Grenet, Louis [CEA-LITEN, Grenoble (France); Peyrade, David [Laboratoire des Technologies de la Microelectronique (LTM/CNRS), Grenoble (France); Bougerol, Catherine [CEA-CNRS-UJF Group ' ' Nanophysique et semi-conducteurs' ' , Institut Neel-CNRS, Grenoble (France); Chikhaoui, Walf [CEA-LETI, Grenoble (France)

2013-03-15

We investigate the influence of growth temperature, p -doping with bis-cyclopentadienyl magnesium (Cp{sub 2}Mg) and number N of multi-quantum wells on the surface morphology, the electrical and optical properties of InGaN-based solar cells grown by metal-organic vapour phase epitaxy. Atomic force microscopy measurements show no influence of multiple-quantum well number on the surface morphology, but a smoothing with the increase of the Cp{sub 2}Mg flow. Electrochemical capacitance-voltage profiling exhibits an increase of the N{sub a}-N{sub d} concentration when increasing the Cp{sub 2}Mg flow from 250 to 700 sccm. X-ray diffraction analysis and transmission electron microscopy measurements confirm completely strained quantum wells with similar superlattice period for N=5 to 30. Finally, first solar cells have been demonstrated with a maximum external quantum efficiency of 38% at 380 nm wavelength for N=30. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

International Nuclear Information System (INIS)

Fay, Sylvie; Steinhauser, Jerome; Nicolay, Sylvain; Ballif, Christophe

2010-01-01

Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

Vertically aligned carbon nanotubes grown on graphene paper as electrodes in lithium-ion batteries and dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Li, Shisheng; Yu, Wanjing; Hou, Pengxiang; Liu, Chang; Cheng, Hui-Ming [Shenyang National Laboratory of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China); Luo, Yanhong; Meng, Qingbo [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lv, Wei; Wu, Sida; Yang, Quanhong [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China)

2011-07-15

Vertically aligned carbon nanotubes (VACNTs) are grown directly on a free-standing graphene paper (GP). The desirable carrier transport ability of the VACNTs, good conductivity and mechanical properties of the GP, and strong bonding between the VACNTs and the GP endow the hybrid structure with superior performance when utilized as the electrodes of lithium-ion batteries and dye-sensitized solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Science.gov (United States)

Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

2018-02-01

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

NARCIS (Netherlands)

Lu, J.; Liu, W.; van der Werf, C.H.M.; Kovalgin, A.Y.; Sun, Y.; Schropp, R.E.I.; Schmitz, J.

2010-01-01

Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal

Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

International Nuclear Information System (INIS)

Bernard, J.

1974-01-01

The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

Dye-sensitized solar cells based on nanostructured zinc oxide

Energy Technology Data Exchange (ETDEWEB)

Conradt, Jonas; Maier-Flaig, Florian; Sartor, Janos; Fallert, Johannes [Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany); Szmytkowski, Jedrzej; Kalt, Heinz [Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany); Center for Functional Nanostructures (CFN), Karlsruhe (Germany); Reinhard, Manuel; Colsmann, Alexander [Karlsruhe Institute of Technology (KIT), Lichttechnisches Institut, Karlsruhe (Germany); Lemmer, Uli [Center for Functional Nanostructures (CFN), Karlsruhe (Germany); Karlsruhe Institute of Technology (KIT), Lichttechnisches Institut, Karlsruhe (Germany); Balaban, Teodor Silviu [Center for Functional Nanostructures (CFN), Karlsruhe (Germany); Karlsruhe Institute of Technology (KIT), Institute for Nanotechnology, Karlsruhe (Germany)

2009-07-01

Hybrid solar cells represent a promising (cost-efficient) alternative to pure inorganic solar cells. We present dye-sensitized solar cells (DSSC) which are based on a zinc oxide (ZnO) electrode covered with a ruthenium dye. Our work focuses on the morphology of the ZnO electrode and its impact on the photovoltaic performance of the solar cell. Nanocrystalline ZnO powder layers and arrays of nanorods are incorporated into the DSSCs. The ZnO nanorods are grown by vapor transport deposition. The morphology and doping concentration of the rods can be controlled by the choice of substrate material, growth condition and catalytic metal layers. The nanorod arrays are expected to fasten the electron transport towards the anode and thereby improve the solar cell efficiency. In addition, novel self-assembling (porphyrin) dyes are tested as sensitizer within a DSSC.

Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

International Nuclear Information System (INIS)

Arafune, K.; Sasaki, T.; Wakabayashi, F.; Terada, Y.; Ohshita, Y.; Yamaguchi, M.

2006-01-01

We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier lifetime with the grain size showed that the region with short minority carrier lifetimes did not correspond to the region with small grains. Conversely, the minority carrier lifetime decreased as the etch-pit density (EPD) increased, suggesting that the minority carrier lifetime is strongly affected by the EPD. Electron beam induced current measurements revealed that a combination of grain boundaries and point defects had high recombination activity. Regarding impurities, the interstitial oxygen concentration was relatively low compared with that in a Czochralski-grown silicon substrate, the total carbon concentration exceeded the solubility limit of silicon melt. X-ray microprobe fluorescence measurements revealed a large amount of iron in the regions where there were many etch-pits and grain boundaries with etch-pits. X-ray absorption near edge spectrum analysis revealed trapped iron in the form of oxidized iron

Influence of seed layer treatment on low temperature grown ZnO nanotubes: Performances in dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Ameen, Sadia [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Akhtar, M. Shaheer [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); New and Renewable Energy Material Development Center (NewREC), Chonbuk National University, Buan-gun, Jeonbuk (Korea, Republic of); Kim, Young Soon [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yang, O-Bong [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shin, Hyung-Shik, E-mail: hsshin@jbnu.ac.k [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2011-01-01

Non-aligned and highly densely aligned ZnO nanotube (NTs), synthesized by low temperature solution method were applied as photoanode materials for the fabrication of efficient dye-sensitized solar cells (DSSCs). The crystalline and the morphological analysis revealed that the grown aligned ZnO NTs possessed a typical hexagonal crystal structure of outer and inner diameter {approx}250 nm and {approx}100 nm, respectively. ZnO seeding on FTO substrates is an essential step to achieve the aligned ZnO NTs. A DSSC fabricated with aligned ZnO NTs photoanode achieved high solar-to-electricity conversion efficiency of {approx}2.2% with short circuit current (J{sub SC}) of 5.5 mA/cm{sup 2}, open circuit voltage (V{sub OC}) of 0.65 V and fill factor (FF) of 0.61. Significantly, the aligned ZnO NTs photoanode showed three times improved solar-to-electricity conversion efficiency than DSSC fabricated with non-aligned ZnO NTs. The enhanced performances were credited to the aligned morphology of ZnO NTs which executed the high charge collection and the transfer of electrons at the interfaces of ZnO NTs and electrolyte layer.

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

Science.gov (United States)

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Low temperature grown ZnO@TiO{sub 2} core shell nanorod arrays for dye sensitized solar cell application

Energy Technology Data Exchange (ETDEWEB)

Goh, Gregory Kia Liang [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, 117602 Singapore (Singapore); Le, Hong Quang, E-mail: lehq@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, 117602 Singapore (Singapore); Huang, Tang Jiao; Hui, Benjamin Tan Tiong [Department of Materials Science and Engineering (DMSE), Faculty of Engineering National University of Singapore (NUS) BLK E3A, #04-10, 7 Engineering Drive 1, Singapore 117574 (Singapore)

2014-06-01

High aspect ratio ZnO nanorod arrays were synthesized on fluorine-doped tin oxide glasses via a low temperature solution method. By adjusting the growth condition and adding polyethylenimine, ZnO nanorod arrays with tunable length were successfully achieved. The ZnO@TiO{sub 2} core shells structures were realized by a fast growth method of immersion into a (NH{sub 4}){sub 2}·TiF{sub 6} solution. Transmission electron microscopy, X-ray Diffraction and energy dispersive X-ray measurements all confirmed the existence of a titania shell uniformly covering the ZnO nanorod's surface. Results of solar cell testing showed that addition of a TiO{sub 2} shell to the ZnO nanorod significantly increased short circuit current (from 4.2 to 5.2 mA/cm{sup 2}), open circuit voltage (from 0.6 V to 0.8 V) and fill factor (from 42.8% to 73.02%). The overall cell efficiency jumped from 1.1% for bare ZnO nanorod to 3.03% for a ZnO@TiO{sub 2} core shell structured solar cell with a 18–22 nm shell thickness, a nearly threefold increase. - Graphical abstract: The synthesis process of coating TiO{sub 2} shell onto ZnO nanorod core is shown schematically. A thin, uniform, and conformal shell had been grown on the surface of the ZnO core after immersing in the (NH{sub 4}){sub 2}·TiF{sub 6} solution for 5–15 min. - Highlights: • ZnO@TiO{sub 2} core shell nanorod has been grown on FTO substrate using low temperature solution method. • TEM, XRD, EDX results confirmed the existing of titana shell, uniformly covered rod's surface. • TiO{sub 2} shell suppressed recombination, demonstrated significant enhancement in cell's efficiency. • Core shell DSSC's efficiency achieved as high as 3.03%, 3 times higher than that of ZnO nanorods.

Combined Impact of Heterogeneous Lifetime and Gettering on Solar Cell Performance

Energy Technology Data Exchange (ETDEWEB)

Morishige, A.; Wagner, H.; Hofstetter, J.; Avci, I.; Canizo, C.; Buonassisi, T.

2015-03-23

We couple numerical process and device simulations to provide a framework for understanding the combined effects of as-grown wafer impurity distribution, processing parameters, and solar cell architecture. For this study, we added the Impurity-to-Efficiency simulator to Synopsys’ Sentaurus Process software using the Alagator Scripting Language. Our results quantify how advanced processing can eliminate differences in efficiency due to different as-grown impurity concentrations and due to different area fractions of defective wafer regions. We identify combinations of as-grown impurity distributions and process parameters that produce solar cells limited by point defects and those that are limited by precipitated impurities. Gettering targeted at either point defect or precipitate reduction can then be designed and applied to increase cell efficiency. We also visualize the post-processing iron and total recombination distributions in 2D maps of the wafer cross-section. PV researchers and companies can input their initial iron distributions and processing parameters into our software and couple the resulting process simulation results with a solar cell device design of interest to conduct their own analyses. The Alagator scripts we developed are freely available online at http://pv.mit.edu/impurity-to-efficiency-i2e-simulator-for-sentaurus-tcad/.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-04-30

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

International Nuclear Information System (INIS)

Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-01-01

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

Energy Technology Data Exchange (ETDEWEB)

Zafar, Muhammad [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of); Yun, Ju-Young [Center for Vacuum, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon 305-600 (Korea, Republic of); Kim, Do-Heyoung, E-mail: kdhh@chonnam.ac.kr [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of)

2017-03-15

Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

International Nuclear Information System (INIS)

Zafar, Muhammad; Yun, Ju-Young; Kim, Do-Heyoung

2017-01-01

Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

Organized Hole Conducting Polymer/Nanoparticle Composite Solar Cell Fiber, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Recent innovations in noncrystalline solar cells are beginning to emerge as viable replacements to traditional CVD grown single crystal counterparts in applications...

Elaboration of fabrication technology of ITO/CdS/CdTe solar cells on flexible polymer substrates

International Nuclear Information System (INIS)

Potlog, T.; Spalatu, N.; Capros, N.

2007-01-01

The development of high efficiency, stable, lightweight and flexible solar cell is important for terrestrial and space applications. We have developed a novel process to make solar cells on flexible polymer sheets. A thin layer of CdTe compound semiconductor is used for the absorption of solar light and generation of electrical current. In this work the solar electricity conversion efficiency of 4,66% is the highest efficiency reported for a solar cell grown on a polymer sheet. (authors)

Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

KAUST Repository

Peng, Wei; Wang, Lingfei; Banavoth, Murali; Ho, Kang-Ting; Bera, Ashok; Cho, Nam Chul; Kang, Chen-Fang; Burlakov, Victor M.; Pan, Jun; Sinatra, Lutfan; Ma, Chun; Xu, Wei; Shi, Dong; Alarousu, Erkki; Goriely, Alain; He, Jr-Hau; Mohammed, Omar F.; Wu, Tao; Bakr, Osman

2016-01-01

conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

InGaAs/InP solar cells for space application

Science.gov (United States)

Karlina, L. B.; Kazantsev, A. B.; Kozlovskii, V. V.; Mokina, I. A.; Shvarts, M. Z.

1995-01-01

The effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.

Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

International Nuclear Information System (INIS)

Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

2007-01-01

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

Radiation damage in lithium-counterdoped N/P silicon solar cells

Science.gov (United States)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Fabrication of dye-sensitized solar cells with multilayer photoanodes

Indian Academy of Sciences (India)

Volume 39 Issue 6 October 2016 pp 1403-1410 ... Keywords. Dye-sensitized solar cells; hydrothermal method; TiO 2 nanocrystals; multilayer photoanodes; energy conversion efficiency. ... Higher energy conversion efficiencies were also attainable using two transparent sub-layers of hydrothermally grown TiO 2 NCs.

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Science.gov (United States)

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Raman scattering characterization of space solar cell structures

Science.gov (United States)

Mintairov, Alexander M.; Khvostikov, V. P.; Paleeva, E. V.; Sorokina, S. V.

1995-01-01

A contactless method for the determination of the free-carrier density and the composition distribution across the thickness of 3-5 multi-layer solar cell structures, using the Raman scattering method, is developed. The method includes a step analysis of Raman spectra from optical phonons and phonon-plasmon modes of different layers. The method provides simultaneous measurements of the element composition and the thickness of the structure's layers together with the free-carrier density. The results of measurements of the free-carrier density composition distributions of the liquid phase epitaxy grown AlGaAs/GaAs and GaSb solar cell structures are presented and discussed.

Influence of interface preparation on minority carrier lifetime for low bandgap tandem solar cell materials

Energy Technology Data Exchange (ETDEWEB)

Szabo, Nadine; Sagol, B. Erol; Seidel, Ulf; Schwarzburg, Klaus; Hannappel, Thomas [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2010-07-01

III-V semiconductor compounds grown by MOVPE are implemented in todays state-of-the-art third generation multi-junction solar cells. The current record multi junction solar cell grown on germanium, having Ge, Ga(In)As and GaInP as subcells, reached a record efficiency of 41.6%. The efficiency of these multi junction solar cells could be significantly increased, if its low bandgap Ge subcell would be replaced by a more efficient tandem. For this purpose the low bandgap materials InGaAs and InGaAsP are suitable. The bandgap composition of these materials allows a better yield of the solar spectrum. Based on InGaAs/InGaAsP absorber materials we have developed a low bandgap tandem solar cell with optimized bandgaps. Results of time resolved photoluminescence (TRPL) for the IR-bandgap compounds InGaAsP (1.03 eV)/InGaAs (0.73 eV) are presented. The lifetime of minority carriers is one of the most important properties of solar cell absorber materials. We show on the example of the low band gap tandem cell how the choice of the materials, the quality of the bulk, the optimization of the band gap energies and the preparation of the critical interfaces are essential to build a high efficiency solar cell. The quality of the bulk and the preparation of the critical interfaces are essential for the growth of the double heterostructure (DHS).

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2016-12-15

Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

Key Success Factors and Future Perspective of Silicon-Based Solar Cells

Directory of Open Access Journals (Sweden)

S. Binetti

2013-01-01

Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

Flexible hybrid energy cell for simultaneously harvesting thermal, mechanical, and solar energies.

Science.gov (United States)

Yang, Ya; Zhang, Hulin; Zhu, Guang; Lee, Sangmin; Lin, Zong-Hong; Wang, Zhong Lin

2013-01-22

We report the first flexible hybrid energy cell that is capable of simultaneously or individually harvesting thermal, mechanical, and solar energies to power some electronic devices. For having both the pyroelectric and piezoelectric properties, a polarized poly(vinylidene fluoride) (PVDF) film-based nanogenerator (NG) was used to harvest thermal and mechanical energies. Using aligned ZnO nanowire arrays grown on the flexible polyester (PET) substrate, a ZnO-poly(3-hexylthiophene) (P3HT) heterojunction solar cell was designed for harvesting solar energy. By integrating the NGs and the solar cells, a hybrid energy cell was fabricated to simultaneously harvest three different types of energies. With the use of a Li-ion battery as the energy storage, the harvested energy can drive four red light-emitting diodes (LEDs).

Radiation damage and annealing of lithium-doped silicon solar cells

Science.gov (United States)

Statler, R. L.

1971-01-01

Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.

InP nanowire array solar cell with cleaned sidewalls

NARCIS (Netherlands)

Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Science.gov (United States)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

International Nuclear Information System (INIS)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

2014-01-01

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

Silicon web process development. [for low cost solar cells

Science.gov (United States)

Duncan, C. S.; Hopkins, R. H.; Seidensticker, R. G.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

1979-01-01

Silicon dendritic web, a single crystal ribbon shaped during growth by crystallographic forces and surface tension (rather than dies), is a highly promising base material for efficient low cost solar cells. The form of the product smooth, flexible strips 100 to 200 microns thick, conserves expensive silicon and facilitates automation of crystal growth and the subsequent manufacturing of solar cells. These characteristics, coupled with the highest demonstrated ribbon solar cell efficiency-15.5%-make silicon web a leading candidate to achieve, or better, the 1986 Low Cost Solar Array (LSA) Project cost objective of 50 cents per peak watt of photovoltaic output power. The main objective of the Web Program, technology development to significantly increase web output rate, and to show the feasibility for simultaneous melt replenishment and growth, have largely been accomplished. Recently, web output rates of 23.6 sq cm/min, nearly three times the 8 sq cm/min maximum rate of a year ago, were achieved. Webs 4 cm wide or greater were grown on a number of occassions.

Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

Science.gov (United States)

2013-01-01

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

OpenAIRE

Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

2008-01-01

Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.

Science.gov (United States)

van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert

2015-08-12

We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells.

Growth of ZnSe nano-needles by pulsed laser deposition and their application in polymer/inorganic hybrid solar cells

International Nuclear Information System (INIS)

Chen, L.; Lai, J.S.; Fu, X.N.; Sun, J.; Ying, Z.F.; Wu, J.D.; Lu, H.; Xu, N.

2013-01-01

Using pulsed-laser deposition method, crystalline ZnSe nano-needles have been grown on catalyst-coated silicon (100) substrates. The crystalline ZnSe nano-needles with the middle diameters of about 20–80 nm, and the lengths ranging from 100 to 600 nm can be grown densely on 300–400 °C substrates. The as-grown ZnSe nano-needles were well crystalline and base-grown. They are potential electron-capturing materials in polymer/inorganic hybrid solar cells for their properties of good electron-conductance and high ratio surface area. Based on the ZnSe nano-needle cathode, a five-layer composite structure of polymer/inorganic hybrid solar cell has been designed and fabricated. The absorption spectra of the blend of regioregular poly(3-hexylthiophene-2,5-diyl) and phenyl-C61-butyric acid methyl ester (P3HT:PCBM), ZnSe nano-needles and the combination of P3HT:PCBM and ZnSe nano-needles were examined by ultraviolet–visible-infrared spectrophotometer, respectively. The absorption bands of the combination of P3HT:PCBM and ZnSe nano-needles fit well with the solar spectral distribution. - Highlights: ► Crystalline ZnSe nano-needles grown by pulsed laser deposition. ► A five-layer polymer/inorganic hybrid solar cell based on ZnSe nano-needles cathode. ► ZnSe nano-needles improve light absorption. ► Employment of ZnSe nano-needles increase the open-circuit voltage and fill factor

Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance

Science.gov (United States)

Desta, Derese; Ram, Sanjay K.; Rizzoli, Rita; Bellettato, Michele; Summonte, Caterina; Jeppesen, Bjarke R.; Jensen, Pia B.; Tsao, Yao-Chung; Wiggers, Hartmut; Pereira, Rui N.; Balling, Peter; Larsen, Arne Nylandsted

2016-06-01

A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles.

Si Wire-Array Solar Cells

Science.gov (United States)

Boettcher, Shannon

2010-03-01

Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

ZnO nanorods for simultaneous light trapping and transparent electrode application in solar cells

KAUST Repository

Khan, Yasser

2011-10-01

Efficacy of using vertically grown ZnO nanorod array in enhancing electromagnetic field intensity and serving as the top contact layer (transparent electrodes) for solar cells was investigated. © 2011 IEEE.

Gallium arsenide single crystal solar cell structure and method of making

Science.gov (United States)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Luminescence investigation of Cu(In,Ga)Se{sub 2}solar cells with different Ga-contents grown in a three-stage-process on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Wendt, Kristin; Mueller, Mathias; Hempel, Thomas; Bertram, Frank; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin for Materials and Energy (Germany)

2011-07-01

A fundamental advantage of Cu(In,Ga)Se{sub 2} (CIGS) alloys as absorber materials in thin-film solar cells is their direct band gap energies which can be varied between 1.04 eV (CuInSe{sub 2}) and 1.68 eV (CuGaSe{sub 2}). Photoluminescence (PL) spectra of complete CIGS solar cells with a systematic variation of the Ga-content in the absorber layer will be presented. The CIGS cells investigated were grown on a Mo back contact sputtered on soda lime glass and have a Ga-concentration ranging over the entire range from CuInSe{sub 2} to CuGaSe{sub 2}. Samples with Ga-contents between 100 % and 33 % show two broad luminescence bands. In contrast, CuInSe{sub 2} exhibits only one broad luminescence band. Each band is composed of two or three different transitions. Varying excitation density over four orders of magnitude results for samples with Ga-content of 0 % and 33 % in a blueshift of the main peak with increasing excitation density. For higher Ga-concentrations, first a blue- and then a redshift of the dominating peak with increasing excitation density is visible. The temperature dependence of the PL spectra is investigated going from 4 K to 300 K.

Nano imprint lithography of textures for light trapping in thin film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Soppe, W.J.; Dorenkamper, M.S.; Notta, J.B.; Pex, P.P.A.C. [ECN-Solliance, High Tech Campus 5, 5656 AE Eindhoven (Netherlands); Schipper, W.; Wilde, R. [Nanoptics GmbH, Innungsstrasse 5, 21244 Buchholz (Germany)

2012-09-15

Nano Imprint Lithography (NIL) is a versatile and commercially viable technology for fabrication of structures for light trapping in solar cells. We demonstrate the applicability of NIL in thin film silicon solar cells in substrate configuration, where NIL is used to fabricate a textured rear contact of the solar cells. We applied random structures, based on the natural texture of SnO:F grown by APCVD, and designed 2D periodic structures and show that for single junction {mu}c-Si cells these textured rear contacts lead to an increase of Jsc of more than 40 % in comparison to cells with flat rear contacts. Cells on optimized periodic textures showed higher fill factors which can be attributed to reduced microcrack formation, leading to less shunting in comparison to cells on random textures.

Development of lithium diffused radiation resistant solar cells, part 2

Science.gov (United States)

Payne, P. R.; Somberg, H.

1971-01-01

The work performed to investigate the effect of various process parameters on the performance of lithium doped P/N solar cells is described. Effort was concentrated in four main areas: (1) the starting material, (2) the boron diffusion, (3) the lithium diffusion, and (4) the contact system. Investigation of starting material primarily involved comparison of crucible grown silicon (high oxygen content) and Lopex silicon (low oxygen content). In addition, the effect of varying growing parameters of crucible grown silicon on lithium cell output was also examined. The objective of the boron diffusion studies was to obtain a diffusion process which produced high efficiency cells with minimal silicon stressing and could be scaled up to process 100 or more cells per diffusion. Contact studies included investigating sintering of the TiAg contacts and evaluation of the contact integrity.

Low temperature processed planar heterojunction perovskite solar cells employing silver nanowires as top electrode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jianhua; Li, Fushan, E-mail: fushanli@hotmail.com; Yang, Kaiyu; Veeramalai, Chandrasekar Perumal; Guo, Tailiang

2016-04-30

Graphical abstract: - Highlights: • All solution processed perovskite solar cells were realized with Ag nanowires. • ZnO nanoparticles were used as electron transport layer. • The solar cells showed a photovoltaic behavior with efficiency of 9.21%. • Device performance showed negligible difference between forward and reverse scan. - Abstract: In this paper, we reported a low temperature processed planar heterojunction perovskite solar cell employing silver nanowires as the top electrode and ZnO nanoparticles as the electron transport layer. The CH{sub 3}NH{sub 3}PbI{sub 3} perovskite was grown as the light absorber via two-step spin-coating technique. The as-fabricated perovskite solar cell exhibited the highest power conversion efficiency of 9.21% with short circuit current density of 19.75 mA cm{sup −2}, open circuit voltage of 1.02, and fill factor value of 0.457. The solar cell's performance showed negligible difference between the forward and reverse bias scan. This work paves a way for realizing low cost solution processable solar cells.

Solution processed bismuth sulfide nanowire array core/silver shuffle shell solar cells

NARCIS (Netherlands)

Cao, Y.; Bernechea, M.; Maclachlan, A.; Zardetto, V.; Creatore, M.; Haque, S.A.; Konstantatos, G.

2015-01-01

Low bandgap inorganic semiconductor nanowires have served as building blocks in solution processed solar cells to improve their power conversion capacity and reduce fabrication cost. In this work, we first reported bismuth sulfide nanowire arrays grown from colloidal seeds on a transparent

Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films.

Science.gov (United States)

Chirilă, Adrian; Buecheler, Stephan; Pianezzi, Fabian; Bloesch, Patrick; Gretener, Christina; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Perrenoud, Julian; Seyrling, Sieghard; Verma, Rajneesh; Nishiwaki, Shiro; Romanyuk, Yaroslav E; Bilger, Gerhard; Tiwari, Ayodhya N

2011-09-18

Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

Cascade Organic Solar Cells

KAUST Repository

Schlenker, Cody W.

2011-09-27

We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

Cascade Organic Solar Cells

KAUST Repository

Schlenker, Cody W.; Barlier, Vincent S.; Chin, Stephanie W.; Whited, Matthew T.; McAnally, R. Eric; Forrest, Stephen R.; Thompson, Mark E.

2011-01-01

We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

Science.gov (United States)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

Crystalline silicon thin film growth by ECR plasma CVD for solar cells

International Nuclear Information System (INIS)

Licai Wang

1999-07-01

This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

Electrochemical Characterization of TiO 2 Blocking Layers for Dye-Sensitized Solar Cells

KAUST Repository

Kavan, Ladislav; Té treault, Nicolas; Moehl, Thomas; Grä tzel, Michael

2014-01-01

Thin compact layers of TiO2 are grown by thermal oxidation of Ti, by spray pyrolysis, by electrochemical deposition, and by atomic layer deposition. These layers are used in dye-sensitized solar cells to prevent recombination of electrons from

Introduction to solar cell production

International Nuclear Information System (INIS)

Kim, Gyeong Hae; Lee, Jun Sin

2009-08-01

This book introduces solar cell production. It is made up eight chapters, which are summary of solar cell with structure and prospect of the business, special variable of solar cell on light of the sun and factor causing variable of solar cell, production of solar cell with surface texturing, diffusion, metal printing dry and firing and edge isolation, process of solar cell on silicone wafer for solar cell, forming of electrodes, introduction of thin film solar cell on operating of solar cell, process of production and high efficiency of thin film solar cell, sorting of solar cell and production with background of silicone solar cell and thin film solar cell, structure and production of thin film solar cell and compound solar cell, introduction of solar cell module and the Industrial condition and prospect of solar cell.

Advances in High-Efficiency III-V Multijunction Solar Cells

Directory of Open Access Journals (Sweden)

Richard R. King

2007-01-01

Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured

Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

KAUST Repository

Kan, Zhipeng

2018-05-11

Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

KAUST Repository

Kan, Zhipeng; Wang, Zhenwei; Firdaus, Yuliar; Babics, Maxime; Alshareef, Husam N.; Beaujuge, Pierre

2018-01-01

Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

Efficiency enhancement of InP nanowire solar cells by surface cleaning

NARCIS (Netherlands)

Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

2015-09-08

A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

An optimized multilayer structure of CdS layer for CdTe solar cells application

International Nuclear Information System (INIS)

Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

2011-01-01

Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

Chalcopyrite semiconductors for quantum well solar cells

Energy Technology Data Exchange (ETDEWEB)

Afshar, Maziar; Sadewasser, Sascha; Albert, Juergen; Lehmann, Sebastian; Abou-Ras, Daniel; Lux-Steiner, Martha C. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Marron, David Fuertes [Instituto de Energia Solar - ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain); Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States); Raesaenen, Esa [Nanoscience Center, Department of Physics University of Jyvaeskylae, FI-40014 Jyvaeskylae (Finland)

2011-11-15

The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se{sub 2} in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe{sub 2} and CuGaSe{sub 2} were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe{sub 2} layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Brett Hallam

2017-12-01

Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

Science.gov (United States)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

Science.gov (United States)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

Science.gov (United States)

Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

1990-01-01

The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

Directory of Open Access Journals (Sweden)

Udai P. Singh

2010-01-01

Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

Energy Technology Data Exchange (ETDEWEB)

Wang, Ke, E-mail: ke.wang@chiba-u.jp; Imai, Daichi; Kusakabe, Kazuhide [Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Department of Information and Communication Engineering, Graduate School of Engineering, Kogakuin University, Nakano-cho, Hachioji, Tokyo 2665-1 (Japan)

2016-01-25

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.

Silicon Web Process Development. [for solar cell fabrication

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

1979-01-01

Silicon dendritic web, ribbon form of silicon and capable of fabrication into solar cells with greater than 15% AMl conversion efficiency, was produced from the melt without die shaping. Improvements were made both in the width of the web ribbons grown and in the techniques to replenish the liquid silicon as it is transformed to web. Through means of improved thermal shielding stress was reduced sufficiently so that web crystals nearly 4.5 cm wide were grown. The development of two subsystems, a silicon feeder and a melt level sensor, necessary to achieve an operational melt replenishment system, is described. A gas flow management technique is discussed and a laser reflection method to sense and control the melt level as silicon is replenished is examined.

Comparative study of structural and electro-optical properties of ZnO:Ga films grown by steered cathodic arc plasma evaporation and sputtering on plastic and their application on polymer-based organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Liang, Chih-Hao, E-mail: dataman888@hotmail.com [R& D Division, Walsin Technology Corporation, Kaohsiung, Taiwan (China); Hsiao, Yu-Jen [National Nano Device Laboratories, National Applied Research Laboratories, Tainan, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan (China)

2016-08-01

Ga-doped ZnO (GZO) films with various thicknesses (105–490 nm) were deposited on PET substrates at a low temperature of 90 °C by a steered cathodic arc plasma evaporation (steered CAPE), and a GZO film with a thickness of 400 nm was deposited at 90 °C by a magnetron sputtering (MS) for comparison. The comparative analysis of the microstructure, residual stress, surface morphology, electrical and optical properties, chemical states, and doping efficiency of the films produced by the steered CAPE and MS processes was performed, and the effect of thickness on the CAPE-grown GZO films was investigated in detail. The results showed that the GZO films grown by steered CAPE exhibited higher crystallinity and lower internal stress than those deposited by MS. The transmittance and electrical properties were also enhanced for the steered CAPE-grown films. The figure of merit (Φ = T{sup 10}/R{sub s}, where T is the transmittance and R{sub s} is the sheet resistance in Ω/□). was used to evaluate the performance of the electro-optical properties. The GZO films with a thickness of 400 nm deposited by CAPE had the highest Φ value, 1.94 × 10{sup −2} Ω{sup −1}, a corresponding average visible transmittance of 88.8% and resistivity of 6.29 × 10{sup −4} Ω·cm. In contrast, the Φ value of MS-deposited GZO film with a thickness of 400 nm is only 1.1 × 10{sup −3} Ω{sup −1}. This can be attributed to the increase in crystalline size, [0001] preferred orientation, decrease in stacking faults density and Ar contamination in steered CAPE-grown films, leading to increases in the Hall mobility and carrier density. In addition, the power conversion efficiency (PCE) of organic solar cells was significantly improved by using the CAPE-grown GZO electrode, and the PCE values were 1.2% and 1.7% for the devices with MS-grown and CAPE-grown GZO electrodes, respectively. - Highlights: • ZnO:Ga (GZO) films were grown on PET by steered cathodic arc plasma evaporation (CAPE

ZnO-Nanorod Dye-Sensitized Solar Cells: New Structure without a Transparent Conducting Oxide Layer

Directory of Open Access Journals (Sweden)

Ming-Hong Lai

2010-01-01

Full Text Available Conventional nanorod-based dye-sensitized solar cells (DSSCs are fabricated by growing nanorods on top of a transparent conducting oxide (TCO, typically fluorine-doped tin oxide—FTO. The heterogeneous interface between the nanorod and TCO forms a source for carrier scattering. This work reports on a new DSSC architecture without a TCO layer. The TCO-less structure consists of ZnO nanorods grown on top of a ZnO film. The ZnO film replaced FTO as the TCO layer and the ZnO nanorods served as the photoanode. The ZnO nanorod/film structure was grown by two methods: (1 one-step chemical vapor deposition (CVD (2 two-step chemical bath deposition (CBD. The thicknesses of the nanorods/film grown by CVD is more uniform than that by CBD. We demonstrate that the TCO-less DSSC structure can operate properly as solar cells. The new DSSCs yield the best short-current density of 3.96 mA/cm2 and a power conversion efficiency of 0.73% under 85 mW/cm2 of simulated solar illumination. The open-circuit voltage of 0.80 V is markedly higher than that from conventional ZnO DSSCs.

Nanowire Structured Hybrid Cell for Concurrently Scavenging Solar and Mechanical Energies

KAUST Repository

Xu, Chen

2009-04-29

Conversion cells for harvesting solar energy and mechanical energy are usually separate and independent entities that are designed and built following different physical principles. Developing a technology that harvests multiple-type energies in forms such as sun light and mechanical around the clock is desperately desired for fully utilizing the energies available in our living environment. We report a hybrid cell that is intended for simultaneously harvesting solar and mechanical energies. Using aligned ZnO nanowire arrays grown on surfaces of a flat substrate, a dye-sensitized solar cell is integrated with a piezoelectric nanogenerator. The former harvests solar energy irradiating on the top, and the latter harvests ultrasonic wave energy from the surrounding. The two energy harvesting approaches can work simultaneously or individually, and they can be integrated in parallel and serial for raising the output current and voltage, respectively, as well as power. It is found that the voltage output from the solar cell can be used to raise the output voltage of the nanogenerator, providing an effective approach for effectively storing and utilizing the power generated by the nanogenerator. Our study demonstrates a new approach for concurrently harvesting multiple types of energies using an integrated hybrid cell so that the energy resources can be effectively and complementary utilized whenever and wherever one or all of them is available. © 2009 American Chemical Society.

Recombination barrier layers in solid-state quantum dot-sensitized solar cells

KAUST Repository

Roelofs, Katherine E.

2012-06-01

By replacing the dye in the dye-sensitized solar cell design with semiconductor quantum dots as the light-absorbing material, solid-state quantum dot-sensitized solar cells (ss-QDSSCs) were fabricated. Cadmium sulfide quantum dots (QDs) were grown in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer increased open circuit voltage, causing an increase in device efficiency. For thicker Al2O3 barrier layers, photocurrent decreased substantially, leading to a decrease in device efficiency. © 2012 IEEE.

Low-temperature grown indium oxide nanowire-based antireflection coatings for multi-crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Yu-Cian; Chen, Chih-Yao; Chen, I Chen [Institute of Materials Science and Engineering, National Central University, Taoyuan (China); Kuo, Cheng-Wen; Kuan, Ta-Ming; Yu, Cheng-Yeh [TSEC Corporation, Hsinchu (China)

2016-08-15

Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O{sub 2}-Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm{sup -2}) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Solar Photovoltaic Cells.

Science.gov (United States)

Mickey, Charles D.

1981-01-01

Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

Directory of Open Access Journals (Sweden)

K. Sharma

2014-01-01

Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

Forward Technology Solar Cell Experiment First On-Orbit Data

Science.gov (United States)

Walters, R. J.; Garner, J. C.; Lam, S. N.; Vazquez, J. A.; Braun, W. R.; Ruth, R. E.; Warner, J. H.; Lorentzen, J. R.; Messenger, S. R.; Bruninga, R.;

Progress in the development of metamorphic multi-junction III-V space solar cells

Energy Technology Data Exchange (ETDEWEB)

Sinharoy, S.; Patton, M.O.; Valko, T.M.; Weizer, V.G. [Essential Research Inc., Cleveland, OH (United States)

2002-07-01

Theoretical calculations have shown that highest-efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single-junction 1.1 and 1.2 eV InGaAs solar cells, interest has grown in the development of multi-junction cells of this type, using graded buffer layer technology. Essential Research Incorporated (ERI) is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AMO), one-sun efficiency of 27%, and 100-sun efficiency of 31.1%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort involves the development of a 2.1 eV A1GaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AMO efficiency 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. For the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper. (author)

Mesostructured Fullerene Electrodes for Highly Efficient n–i–p Perovskite Solar Cells

KAUST Repository

Zhong, Yufei

2016-10-21

Electron-transporting layers in today\\'s stateof-the-art n-i-p organohalide perovskite solar cells are almost exclusively made of metal oxides. Here, we demonstrate a novel mesostructured fullerene-based electron-transporting material (ETM) that is crystalline, hydrophobic, and cross-linked, rendering it solvent-and heat resistant for subsequent perovskite solar cell fabrication The fullerene ETM is shown to enhance the structural and electronic properties of the CH3NH3PbI3 layer grown atop, reducing its Urbach energy from similar to 26 to 21 meV, while also increasing crystallite size and improving texture. The resulting mesostructured n-i-p solar cells achieve reduced recombination, improved device-to-device variation, reduced hysteresis, and a power conversion efficiency above 15%, surpassing the performance of similar devices prepared using mesoporous TiO2 and well above the performance of planar heterojunction devices on amorphous or crystalline [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM). This work is the first demonstration of a viable, hydrophobic, and high-performance mesostructured electron-accepting contact to work effectively in n-i-p perovskite solar cells.

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

Energy Technology Data Exchange (ETDEWEB)

Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Vaisman, Michelle [Yale University; Li, Qiang [Hong Kong University of Science and Technology; Lau, Kei May [Hong Kong University of Science and Technology

2017-08-31

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Surface Passivation of CIGS Solar Cells Using Gallium Oxide

KAUST Repository

Garud, Siddhartha

2018-02-27

This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

Directory of Open Access Journals (Sweden)

I. M. Dharmadasa

2014-06-01

Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

Core/shell structured NaYF4:Yb3+/Er3+/Gd+3 nanorods with Au nanoparticles or shells for flexible amorphous silicon solar cells

International Nuclear Information System (INIS)

Li, Z Q; Li, X D; Liu, Q Q; Chen, X H; Sun, Z; Huang, S M; Liu, C; Ye, X J

2012-01-01

A simple approach for preparing near-infrared (NIR) to visible upconversion (UC) NaYF 4 :Yb/Er/Gd nanorods in combination with gold nanostructures has been reported. The grown UC nanomaterials with Au nanostructures have been applied to flexible amorphous silicon solar cells on the steel substrates to investigate their responses to sub-bandgap infrared irradiation. Photocurrent–voltage measurements were performed on the solar cells. It was demonstrated that UC of NIR light led to a 16-fold to 72-fold improvement of the short-circuit current under 980 nm illumination compared to a cell without upconverters. A maximum current of 1.16 mA was obtained for the cell using UC nanorods coated with Au nanoparticles under 980 nm laser illumination. This result corresponds to an external quantum efficiency of 0.14% of the solar cell. Mechanisms of erbium luminescence in the grown UC nanorods were analyzed and discussed. (paper)

CIGS thin films, solar cells, and submodules fabricated using a rf-plasma cracked Se-radical beam source

International Nuclear Information System (INIS)

Ishizuka, Shogo; Yamada, Akimasa; Shibata, Hajime; Fons, Paul; Niki, Shigeru

2011-01-01

Coevaporated Cu(In,Ga)Se 2 (CIGS) film growth using a rf-plasma cracked Se-radical beam (R-Se) source leads to a significant reduction in the amount of raw Se source material wasted during growth and exhibits unique film properties such as highly dense, smooth surfaces and large grain size. R-Se grown CIGS solar cells also show concomitant unique properties different from conventional evaporative Se (E-Se) source grown CIGS cells. In the present work, the impact of modified surfaces, interfaces, and bulk crystal properties of R-Se grown CIGS films on the solar cell performance was studied. When a R-Se source was used, Na diffusion into CIGS layers was enhanced while a remarkable diffusion of elemental Ga and Se into Mo back contact layers was observed. Improvements in the bulk crystal quality as manifested by large grain size and increased Na concentration with the use of a R-Se source is expected to be effective to improve photovoltaic performance. Using a R-Se source for the growth of CIGS absorber layers at a relatively low growth temperature, we have successfully demonstrated a monolithically integrated submodule efficiency of 15.0% (17 cells, aperture area of 76.5 cm 2 ) on 0.25-mm thick soda-lime glass substrates.

All-solid, flexible solar textiles based on dye-sensitized solar cells with ZnO nanorod arrays on stainless steel wires

Energy Technology Data Exchange (ETDEWEB)

Chae, Youngjin [Department of Clothing and Textiles, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Park, Jung Tae; Koh, Jong Kwan [Department of Chemical and Biomolecular Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Jong Hak, E-mail: jonghak@yonsei.ac.kr [Department of Chemical and Biomolecular Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Eunae, E-mail: eakim@yonsei.ac.kr [Department of Clothing and Textiles, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

2013-10-01

Highlights: • All-solid, flexible solar textile fabricated with DSSCs is demonstrated. • DSSCs woven into a satin structure and transparent PET film are used. • Solar textile showed a high efficiency of 2.57%. -- Abstract: An all-solid, flexible solar textile fabricated with dye-sensitized solar cells (DSSCs) woven into a satin structure and transparent poly(ethylene terephthalate) (PET) film was demonstrated. A ZnO nanorod (NR) vertically grown from fiber-type conductive stainless steel (SS) wire was utilized as a photoelectrode, and a Pt-coated SS wire was used as a counter electrode. A graft copolymer, i.e. poly(vinyl chloride)-graft-poly(oxyethylene methacrylate) (PVC-g-POEM) was synthesized via atom transfer radical polymerization (ATRP) and used as a solid electrolyte. The conditions for the growth of ZnO NR and sufficient dye loading were investigated to improve cell performance. The adhesion of PET films to DSSCs resulted in physical stability improvements without cell performance loss. The solar textile with 10 × 10 wires exhibited an energy conversion efficiency of 2.57% with a short circuit current density of 20.2 mA/cm{sup 2} at 100 mW/cm{sup 2} illumination, which is the greatest account of an all-solid, ZnO-based flexible solar textile. DSSC textiles with woven structures are applicable to large-area, roll-to-roll processes.

Four-cell solar tracker

Science.gov (United States)

Berdahl, C. M.

1981-01-01

Forty cm Sun tracker, consisting of optical telescope and four solar cells, stays pointed at Sun throughout day for maximum energy collection. Each solar cell generates voltage proportional to part of solar image it receives; voltages drive servomotors that keep image centered. Mirrored portion of cylinder extends acquisition angle of device by reflecting Sun image back onto solar cells.

Nanocrystal Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Gur, Ilan [Univ. of California, Berkeley, CA (United States)

2006-01-01

This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

Co-sensitization of quantum dot sensitized solar cells composed of TiO2 nanocrystalline photoanode with CdS and PbS nanoparticles and effect of PbS on the performance of solar cell

Directory of Open Access Journals (Sweden)

Maziar Marandi

2017-09-01

Full Text Available In this research, CdS and PbS quantum dots were applied as the light sensitizers in TiO2 based nanostructured solar cells. The PbS quantum dots could absorb a wide range of the sunlight spectrum on earth due to their low bandgap energy. As a result, the cell sensitization is more effective by application of both CdS and PbS quantum dots sensitizers. The TiO2 nanocrystals were synthesized through a hydrothermal process and deposited on FTO glass substrates as the photoanode scaffold. Then PbS quantum dots were grown on the surface of this nanocrystalline layer by a successive ionic layer adsorption and reaction (SILAR method. The CdS quantum dots were over-grown in the next step through a similar deposition method. Finally this sensitized layer was applied as the photoelectrode of the corresponding quantum dot sensitized solar cells. The results demonstrated that the maximum efficiency was achieved for the cell with a photoanode made of co-sensitization through 2 and 6 cycles of PbS and CdS deposition, respectively. The photovoltaic parameters of this cell were measured as Jsc of 10.81 mA/cm2, Voc of 590 mv and energy conversion efficiency of 2.7+0.2%.

Carrier transport in polycrystalline silicon thin films solar cells grown on a highly textured structure

Czech Academy of Sciences Publication Activity Database

Honda, Shinya; Takakura, H.; Hamakawa, Y.; Muhida, R.; Kawamura, T.; Harano, T.; Toyama, T.; Okamoto, H.

2004-01-01

Roč. 43, 9A (2004), s. 5955-5959 ISSN 0021-4922 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon thin film * solar cells * substrate texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.142, year: 2004

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2013-11-26

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

High Efficiency Multijunction Solar Cells with Finely-Tuned Quantum Wells

Science.gov (United States)

Varonides, Argyrios C.

The field of high efficiency (inorganic) photovoltaics (PV) is rapidly maturing in both efficiency goals and cover all cost reduction of fabrication. On one hand, know-how from space industry in new solar cell design configurations and on the other, fabrication cost reduction challenges for terrestrial uses of solar energy, have paved the way to a new generation of PV devices, capable of capturing most of the solar spectrum. For quite a while now, the goal of inorganic solar cell design has been the total (if possible) capture-absorption of the solar spectrum from a single solar cell, designed in such a way that a multiple of incident wavelengths could be simultaneously absorbed. Multi-absorption in device physics indicates parallel existence of different materials that absorb solar photons of different energies. Bulk solid state devices absorb at specific energy thresholds, depending on their respective energy gap (EG). More than one energy gaps would on principle offer new ways of photon absorption: if such a structure could be fabricated, two or more groups of photons could be absorbed simultaneously. The point became then what lattice-matched semiconductor materials could offer such multiple levels of absorption without much recombination losses. It was soon realized that such layer multiplicity combined with quantum size effects could lead to higher efficiency collection of photo-excited carriers. At the moment, the main reason that slows down quantum effect solar cell production is high fabrication cost, since it involves primarily expensive methods of multilayer growth. Existing multi-layer cells are fabricated in the bulk, with three (mostly) layers of lattice-matched and non-lattice-matched (pseudo-morphic) semiconductor materials (GaInP/InGaN etc), where photo-carrier collection occurs in the bulk of the base (coming from the emitter which lies right under the window layer). These carriers are given excess to conduction via tunnel junction (grown between

Development of processes for the production of low cost silicon dendritic web for solar cells

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Skutch, M. E.; Driggers, J. M.; Hill, F. E.

1980-01-01

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Ultrathin film, high specific power InP solar cells on flexible plastic substrates

International Nuclear Information System (INIS)

Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

2009-01-01

We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

Contribution of Nanostructures in High Performance Solar Cells

Science.gov (United States)

Aly, Abouelmaaty M.; Ebrahim, Essamudin A.; Sweelem, Emad

2017-11-01

Nanotechnology has great contributions in various fields, especially in solar energy conversion through solar cells (SCs). Nanostructured SCs can provide high performance with lower fabrication costs. The transition from fossil fuel energy to renewable sustainable energy represents a major technological challenge for the world. In the last years, the industry of SCs has grown rapidly due to strong attention in renewable energy in order to handle the problem of global climate change that is now believed to occur due to use of the fossil fuels. Cost is an influential factor in the eventual success of any solar technology, since inexpensive SCs are needed to produce electricity, especially for rural areas and for third world countries. Therefore, new developments in nanotechnology may open the door for the production of inexpensive and more efficient SCs by reducing the manufacturing costs of SCs. Utilizing nanotechnology in cheaper SCs will help maintain the environment. This article covers a review of the progress that has been made to-date to enhance efficiencies of various nanostructures used in SCs, including utilizations of all the wavelengths present in of the solar spectrum.

Effects of impurities on silicon solar-cell performance

Science.gov (United States)

Hopkins, R. H.

1986-01-01

Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

Rectenna solar cells

CERN Document Server

Moddel, Garret

2013-01-01

Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

Processing of semiconductors and thin film solar cells using electroplating

Science.gov (United States)

Madugu, Mohammad Lamido

The global need for a clean, sustainable and affordable source of energy has triggered extensive research especially in renewable energy sources. In this sector, photovoltaic has been identified as a cheapest, clean and reliable source of energy. It would be of interest to obtain photovoltaic material in thin film form by using simple and inexpensive semiconductor growth technique such as electroplating. Using this growth technique, four semiconductor materials were electroplated on glass/fluorine-doped tin oxide (FTO) substrate from aqueous electrolytes. These semiconductors are indium selenide (In[x]Sey), zinc sulphide (ZnS), cadmium sulphide (CdS) and cadmium telluride (CdTe). In[x]Se[y] and ZnS were incorporated as buffer layers while CdS and CdTe layers were utilised as window and absorber layers respectively. All materials were grown using two-electrode (2E) system except for CdTe which was grown using 3E and 2E systems for comparison. To fully optimise the growth conditions, the as-deposited and annealed layers from all the materials were characterised for their structural, morphological, optical, electrical and defects structures using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption (UV-Vis spectroscopy), photoelectrochemical (PEC) cell measurements, current-voltage (I-V), capacitance-voltage (C-V), DC electrical measurements, ultraviolet photoelectron spectroscopy (UPS) and photoluminescence (PL) techniques. Results show that InxSey and ZnS layers were amorphous in nature and exhibit both n-type and p-type in electrical conduction. CdS layers are n-type in electrical conduction and show hexagonal and cubic phases in both the as-deposited and after annealing process. CdTe layers show cubic phase structure with both n-type and p-type in electrical conduction. CdTe-based solar cell structures with a n-n heterojunction plus large Schottky barrier, as well as multi-layer graded

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

Science.gov (United States)

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

2012-07-01

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

Extended defects in MBE-grown CdTe-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Wichrowska, Karolina; Wosinski, Tadeusz; Kret, Slawomir; Chusnutdinow, Sergij; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Rawski, Michal [Analytical Laboratory, Maria Curie-Sklodowska University, Lublin (Poland); Yastrubchak, Oksana [Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)

2015-08-15

Extended defects in the p -ZnTe/n -CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been investigated by deep-level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Four hole traps, called H1 to H4, and one electron trap, called E3, have been revealed in the DLTS spectra measured for the heterojunctions grown on the GaAs substrates. The H1, H3, H4 and E3 traps have been attributed to the electronic states of dislocations on the ground of their logarithmic capture kinetics. The DLTS peaks associated with the H1 and E3 traps were not observed in the DLTS spectra measured for the heterojunction grown on the CdTe substrate. They are most likely associated with threading dislocations generated at the mismatched interface with the GaAs substrate. Cross-sectional TEM images point out that they are dislocations of the 60 -type. In both the types of heterojunctions the H4 trap was observed only under forward-bias filling pulse, suggesting that this trap is associated with the CdTe/ZnTe interface. In addition, TEM images revealed also the presence of intrinsic and extrinsic stacking faults in the CdTe layers, which may considerably affect their electronic properties. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nanostructured Organic Solar Cells

DEFF Research Database (Denmark)

Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

Research and development of CdTe based thin film PV solar cells

Science.gov (United States)

Diso, Dahiru Garba

The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

Efficient planar heterojunction perovskite solar cells employing graphene oxide as hole conductor.

Science.gov (United States)

Wu, Zhongwei; Bai, Sai; Xiang, Jian; Yuan, Zhongcheng; Yang, Yingguo; Cui, Wei; Gao, Xingyu; Liu, Zhuang; Jin, Yizheng; Sun, Baoquan

2014-09-21

Graphene oxide (GO) is employed as a hole conductor in inverted planar heterojunction perovskite solar cells, and the devices with CH₃NH₃PbI₃-xClx as absorber achieve an efficiency of over 12%. The perovskite film grown on GO exhibits enhanced crystallization, high surface coverage ratio as well as preferred in-plane orientation of the (110) plane. Efficient hole extraction from the perovskite to GO is demonstrated.

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

Energy Technology Data Exchange (ETDEWEB)

Carrington, Peter James, E-mail: p.carrington@lancaster.ac.uk [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Mahajumi, Abu Syed [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Wagener, Magnus C.; Botha, Johannes Reinhardt [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Zhuang Qian; Krier, Anthony [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-05-15

We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

International Nuclear Information System (INIS)

Carrington, Peter James; Mahajumi, Abu Syed; Wagener, Magnus C.; Botha, Johannes Reinhardt; Zhuang Qian; Krier, Anthony

2012-01-01

We report on the fabrication of GaAs based p–i–n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.

Radiation hard solar cell and array

International Nuclear Information System (INIS)

Russell, R.L.

1975-01-01

A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

Solar cell radiation handbook

Science.gov (United States)

Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

1982-01-01

The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

Energy Technology Data Exchange (ETDEWEB)

Hubbard, Seth

2012-09-12

The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

Energy Technology Data Exchange (ETDEWEB)

Ari, Ozan; Polat, Mustafa; Selamet, Yusuf [Department of Physics, Izmir Institute of Technology, Izmir 35430 (Turkey); Karakaya, Merve [Department of Material Science and Engineering, Izmir Institute of Technology, Izmir 35430 (Turkey)

2015-11-15

CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∝5 x 10{sup 5}cm{sup -1} in solar radiation spectrum. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

How the relative permittivity of solar cell materials influences solar cell performance

DEFF Research Database (Denmark)

Crovetto, Andrea; Huss-Hansen, Mathias K.; Hansen, Ole

2017-01-01

of the materials permittivity on the physics and performance of the solar cell by means of numerical simulation supported by analytical relations. We demonstrate that, depending on the specific solar cell configuration and materials properties, there are scenarios where the relative permittivity has a major......The relative permittivity of the materials constituting heterojunction solar cells is usually not considered as a design parameter when searching for novel combinations of heterojunction materials. In this work, we investigate the validity of such an approach. Specifically, we show the effect...... the heterojunction partner has a high permittivity, solar cells are consistently more robust against several non-idealities that are especially likely to occur in early-stage development, when the device is not yet optimized....

Transparent solar cell window module

Energy Technology Data Exchange (ETDEWEB)

Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

2010-03-15

A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

2007-01-01

Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

Effects of the aspect ratio on the dye adsorption of ZnO nanorods grown by using a sonochemical method for dye-sensitized solar cells

International Nuclear Information System (INIS)

Choi, Seok Cheol; Yun, Won Suk; Sohn, Sang Ho; Oh, Sang Jin

2012-01-01

Well-aligned ZnO nanorods for the photoelectrode of dye-sensitized solar cells (DSSCs) were grown via a sonochemical method, and the effects of their aspect ratios on the dye adsorption in DSSCs were studied. The control of the aspect ratio of well-aligned ZnO nanorods was performed by tuning the mole concentration of zinc acetate dehydrate in the range of 0.04 ∼ 0.06M. The dye amounts adsorbed in the ZnO nanorods were estimated from the UV-Visible absorbance by using the Beer-Lambert law. The efficiency of DSSCs with ZnO nanorods was measured to investigate the effects of the aspect ratio of the ZnO nanorods on the dye adsorption properties. A change in the aspect ratio of the ZnO nanorods was founded to yield a change in their dye adsorption ability, resulting in a change in the efficiency of the DSSCs.

Structural Properties of Zinc Oxide Nanorods Grown on Al-Doped Zinc Oxide Seed Layer and Their Applications in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Kyung Ho Kim

2014-03-01

Full Text Available We fabricated zinc oxide (ZnO nanorods (NRs with Al-doped ZnO (AZO seed layers and dye-sensitized solar cells (DSSCs employed the ZnO NRs between a TiO2 photoelectrode and a fluorine-doped SnO2 (FTO electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crystallinity of the seed layer was vital to the well-aligned growth of the NRs. However, the growth was less related to the substrate material (glass and FTO coated glass. With optimized ZnO NRs, the DSSCs exhibited remarkably enhanced photovoltaic performance, because of the increase of dye absorption and fast carrier transfer, which, in turn, led to improved efficiency. The cell with the ZnO NRs grown on an AZO seed layer annealed at 350 °C showed a short-circuit current density (JSC of 12.56 mA/cm2, an open-circuit voltage (VOC of 0.70 V, a fill factor (FF of 0.59 and a power conversion efficiency (PCE, η of 5.20% under air mass 1.5 global (AM 1.5G illumination of 100 mW/cm2.

CuIn{sub 1-x}Ga{sub x}Se{sub 2} photovoltaic devices for tandem solar cell application

Energy Technology Data Exchange (ETDEWEB)

Seyrling, S. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland)], E-mail: seyrling@phys.ethz.ch; Calnan, S. [Department of Electronic and Electrical Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Buecheler, S. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Huepkes, J. [Institut fuer Energieforschung, Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Wenger, S. [Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, EPF Lausanne, 1015 Lausanne (Switzerland); Bremaud, D.; Zogg, H. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Tiwari, A.N. [Thin Film Physics Group, Laboratory for Solid-State Physics, ETH Zuerich, Technopark, Technoparkstrasse 1, 8005 Zuerich (Switzerland); Department of Electronic and Electrical Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

2009-02-02

CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) solar cells show a good spectral response in a wide range of the solar spectrum and the bandgap of CIGS can be adjusted from 1.0 eV to 1.7 eV by increasing the gallium-to-indium ratio of the absorber. While the bandgaps of Ga-rich CIGS or CGS devices make them suitable for top or intermediate cells, the In rich CIGS or CIS devices are well suited to be used as bottom cells in tandem solar cells. The photocurrent can be adapted to the desired value for current matching in tandem cells by changing the composition of CIGS which influences the absorption characteristics. Therefore, CIGS layers with different [Ga]/[In + Ga] ratios were grown on Mo and ZnO:Al coated glass substrates. The grain size, composition of the layers, and morphology strongly depend on the Ga content. Layers with Ga rich composition exhibit smaller grain size and poor photovoltaic performance. The current densities of CIGS solar cells on ZnO:Al/glass varied from 29 mA cm{sup -2} to 13 mA cm{sup -2} depending on the Ga content, and 13.5% efficient cells were achieved using a low temperature process (450 deg. C ). However, Ga-rich solar cells exhibit lower transmission than dye sensitized solar cells (DSC). Prospects of tandem solar cells combining a DSC with CIGS are presented.

World's Most Efficient Solar Cell

Science.gov (United States)

World's Most Efficient Solar Cell National Renewable Energy Laboratory, Spectrolab Set Record For , 1999 - A solar cell that can convert sunlight to electricity at a record-setting 32 percent efficiency on Earth. Spectrolab of Sylmar, Calif., "grew" the record-setting solar cell. After

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

Science.gov (United States)

Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

2015-09-14

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

NARCIS (Netherlands)

Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

2011-01-01

We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Solar cell concentrating system

International Nuclear Information System (INIS)

Garg, H.P.; Sharma, V.K.; Agarwal, R.K.

1986-11-01

This study reviews fabrication techniques and testing facilities for different solar cells under concentration which have been developed and tested. It is also aimed to examine solar energy concentrators which are prospective candidates for photovoltaic concentrator systems. This may provide an impetus to the scientists working in the area of solar cell technology

Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

Science.gov (United States)

Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

Industrial Silicon Wafer Solar Cells

Directory of Open Access Journals (Sweden)

Dirk-Holger Neuhaus

2007-01-01

Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Degradation of CIGS solar cells

NARCIS (Netherlands)

Theelen, M.J.

2015-01-01

Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a

Solar cell with back side contacts

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

2013-12-24

A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

Impurity effects in silicon for high efficiency solar cells

Science.gov (United States)

Hopkins, R. H.; Rohatgi, A.

1986-01-01

Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

Three-Terminal Amorphous Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Cheng-Hung Tai

2011-01-01

Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

KAUST Repository

Labouchere, Philippe; Chandiran, Aravind Kumar; Moehl, Thomas; Harms, Hauke; Chavhan, Sudam; Tena-Zaera, Ramon; Nazeeruddin, Mohammad Khaja; Graetzel, Michael; Tetreault, Nicolas

2014-01-01

A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive

Bias-dependent high saturation solar LBIC scanning of solar cells

Energy Technology Data Exchange (ETDEWEB)

Vorster, F.J.; van Dyk, E.E. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2007-06-15

A light beam-induced current measurement system that uses concentrated solar radiation as a beam probe to map spatially distributed defects on a solar cell has been developed and tested [F.J. Vorster, E.E. van Dyk, Rev. Sci. Instrum., submitted for review]. The induced current response from a flat plate EFG Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. This paper examines the issues relating to transient capacitive effects as well as the electrical behaviour of typical solar cell defect mechanisms under spot illumination. By examining the bias dependence of the S-LBIC maps, various defect mechanisms of photovoltaic (PV) cells under concentrated solar irradiance may be identified. The techniques employed to interpret the spatially distributed IV curves as well as initial results are discussed. (author)

Solar cells

International Nuclear Information System (INIS)

1980-01-01

A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

Energy Technology Data Exchange (ETDEWEB)

Zheng, P.; Rougieux, F. E.; Samundsett, C.; Yang, Xinbo; Wan, Yimao; Macdonald, D. [Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Terrritory 2601 (Australia); Degoulange, J.; Einhaus, R. [Apollon Solar, 66 Cours Charlemagne, Lyon 69002 (France); Rivat, P. [FerroPem, 517 Avenue de la Boisse, Chambery Cedex 73025 (France)

2016-03-21

We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presence of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.

Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

Science.gov (United States)

Wang, Shu-Yi

To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance

New mounting improves solar-cell efficiency

Science.gov (United States)

Shepard, N. F., Jr.

1980-01-01

Method boosts output by about 20 percent by trapping and redirecting solar radiation without increasing module depth. Mounted solar-cell array is covered with internally reflecting plate. Plate is attached to each cell by transparent adhesive, and space between cells is covered with layer of diffusely reflecting material. Solar energy falling on space between cells is diffused and reflected internally by plate until it is reflected onto solar cell.

Growth of Comb-like ZnO Nanostructures for Dye-sensitized Solar Cells Applications

Directory of Open Access Journals (Sweden)

Umar Ahmad

2009-01-01

Full Text Available Abstract Dye-sensitized solar cells (DSSCs were fabricated by using well-crystallized ZnO nanocombs directly grown onto the fluorine-doped tin oxide (FTO via noncatalytic thermal evaporation process. The thin films of as-grown ZnO nanocombs were used as photoanode materials to fabricate the DSSCs, which exhibited an overall light to electricity conversion efficiency of 0.68% with a fill factor of 34%, short-circuit current of 3.14 mA/cm2, and open-circuit voltage of 0.671 V. To the best of our knowledge, this is first report in which thin film of ZnO nanocombs was used as photoanode materials to fabricate the DSSCs.

Design of a Free-Ruthenium In2S3 Crystalline Photosensitized Solar Cell

Directory of Open Access Journals (Sweden)

Byeong Sub Kwak

2014-01-01

Full Text Available A new type of sulfide-based, solid-state dye material that is sensitive to visible radiation was assessed as a potential replacement for commercial ruthenium complex dyes in a dye-sensitized solar cell (DSSC assembly. The In2S3 crystals on the surface of the TiO2 bottom blocking layer were grown as a solid-state dye material. Scanning electron microscopy of In2S3 revealed a microsized, 3D-connected sheet-like shape, which was confirmed by X-ray diffraction to be a beta-structure. The efficiency of the dye-sensitized solar cells assembled with a layer grown with In2S3 increased with increasing In2S3 mole concentrations to 0.05 M (1.02% but decreased at concentrations greater than 0.6~0.8%. This suggests that crystalline In2S3 acts as a dye sensitized to visible radiation, but the short-circuit current density is too low compared to the commercially available ruthenium dye. This suggests that In2S3 crystals did not grow densely but were bulk-grown with large pores, resulting in a smaller amount of In2S3 per unit area. Two IPCE curves were observed, which were assigned to TiO2 and In2S3, meaning that the TiO2 surfaces were covered completely with In2S3 crystals. The exposure of TiO2 eventually leads to a reaction with the electrolytes, resulting in lower quantum efficiency.

Quantum dot solar cells

CERN Document Server

Wu, Jiang

2013-01-01

The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

Quantum dot solar cell

International Nuclear Information System (INIS)

Ahamefula, U.C.; Sulaiman, M.Y.; Sopian, K.; Ibarahim, Z.; Ibrahim, N.; Alghoul, M.A.; Haw, L.C.; Yahya, M.; Amin, N.; Mat, S.; Ruslan, M.H.

2009-01-01

Full text: The much awaited desire of replacing fossil fuel with photovoltaic will remain a fairy tale if the myriad of issues facing solar cell development are marginalized. Foremost in the list is the issue of cost. Silicon has reached a stage where its use on large scale can no longer be lavishly depended upon. The demand for high grade silicon from the microelectronics and solar industries has soared leading to scarcity. New approach has to be sought. Notable is the increased attention on thin films such as cadmium telluride, copper indium gallium diselenide, amorphous silicon, and the not so thin non-crystalline family of silicon. While efforts to address the issues of stability, toxicity and efficiency of these systems are ongoing, another novel approach is quietly making its appearance - quantum dots. Quantum dots seem to be promising candidates for solar cells because of the opportunity to manipulate their energy levels allowing absorption of a wider solar spectrum. Utilization of minute quantity of these nano structures is enough to bring the cost of solar cell down and to ascertain sustainable supply of useful material. The paper outlines the progress that has been made on quantum dot solar cells. (author)

Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

KAUST Repository

Brennan, Thomas P.; Trejo, Orlando; Roelofs, Katherine E.; Xu, John; Prinz, Fritz B.; Bent, Stacey F.

2013-01-01

Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.

Dye Sensitized Solar Cell, DSSC

Directory of Open Access Journals (Sweden)

Pongsatorn Amornpitoksuk

2003-07-01

Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

Sulfur passivation and contact methods for GaAs nanowire solar cells

International Nuclear Information System (INIS)

Tajik, N; Peng, Z; Kuyanov, P; LaPierre, R R

2011-01-01

The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.

Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells

Science.gov (United States)

Wahl, Tina; Hanisch, Jonas; Ahlswede, Erik

2018-04-01

In this work, we present inverted perovskite solar cells with Al top electrodes, which were deposited by three different methods. Besides the widely used thermal evaporation of Al, we also used the industrially important high deposition rate processes sputtering and electron beam evaporation for aluminium electrodes and examined the influence of the deposition method on the solar cell performance. The current-voltage characteristics of as grown solar cells with sputtered and e-beam Al electrode show an s-shape due to damage done to the organic electronic transport layers (ETL) during Al deposition. It can be cured by a short annealing step at a moderate temperature so that fill factors  >60% and power conversion efficiencies of almost 12% with negligible hysteresis can be achieved. While solar cells with thermally evaporated Al electrode do not show an s-shape, they also exhibit a clear improvement after a short annealing step. In addition, we varied the thickness of the ETL consisting of a double layer ([6,6]-Phenyl-C61-butyric acid methyl ester and bathocuproine) and investigated the influence on the solar cell parameters for the three different Al deposition methods, which showed distinct dependencies on ETL thickness.

Dye Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Di Wei

2010-03-01

Full Text Available Dye sensitized solar cell (DSSC is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

Science.gov (United States)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

OpenAIRE

Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

2016-01-01

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

Self-ordering anodized nanotubes: Enhancing the performance by surface plasmon for dye-sensitized solar cell

International Nuclear Information System (INIS)

Agarwala, S.; Ho, G.W.

2012-01-01

In the present work, electrochemical anodization has been used to prepare uniform TiO 2 nanotube array photoelectrode. The average internal diameter, tube length and wall thickness of the optimized morphology is ∼180 nm, 14 μm and 10 nm, respectively. It was found that the tube diameter increases with the anodization voltage. Diffraction data reveals that the nanotubes consist solely of anatase phase. Back illuminated geometry of dye-sensitized solar cell (DSSC), with nanotubes grown at 60 V for 2 h, gave a cell performance of 4.5%. TiO 2 nanotubes are loaded with silver (Ag) nanoparticles synthesized by a hydrothermal route. The Ag particle size is controlled resulting in solar conversion efficiency to increase by 22%. The DSSC based on TiO 2 nanotube with Ag nanoparticles shows power conversion efficiency of 5.5%. Detailed characterization are performed, presented and discussed. - Graphical abstract: Enhanced solar conversion efficiency of dye-sensitized solar cells by decorating TiO 2 nanotube array with Ag nanoparticles. Highlights: ► Uniform array of TiO 2 nanotubes synthesized via electrochemical anodization. ► Back illuminated DSSC gave a cell performance of 4.5%. ► TiO 2 nanotubes are loaded with Ag nanoparticles, which increased the power conversion efficiency to 5.5%.

Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

Energy Technology Data Exchange (ETDEWEB)

Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

2015-09-28

We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

Investigation on the Tunable-Length Zinc Oxide Nanowire Arrays for Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Shou-Yi Kuo

2014-01-01

Full Text Available We had successfully fabricated ZnO-based nanowires by vapor transport method in the furnace tube. ZnO nanowire arrays grown in 600°C for 30 minutes, 60 minutes, 90 minutes, and 120 minutes had applied to the dye-sensitized solar cells. The dye loading is proportional to the total equivalent surface area of ZnO nanowire arrays in the cells and plays an important role in improving power conversion efficiency. The highest efficiency was observed in DSSC sample with ZnO nanowires grown for 90 minutes, which had the largest equivalent surface area and also the highest dye loading. According to our experimental results, the enhancement in power conversion efficiency is attributed to the higher light harvesting and reduction of carrier recombination. In addition, ZnO nanowires also contribute to the photocurrent in the UV region.

Quantum Dots for Solar Cell Application

Science.gov (United States)

Poudyal, Uma

Solar energy has been anticipated as the most important and reliable source of renewable energy to address the ever-increasing energy demand. To harvest solar energy efficiently, diverse kinds of solar cells have been studied. Among these, quantum dot sensitized solar cells have been an interesting group of solar cells mainly due to tunable, size-dependent electronic and optical properties of quantum dots. Moreover, doping these quantum dots with transition metal elements such as Mn opens avenue for improved performance of solar cells as well as for spin based technologies. In this dissertation, Mn-doped CdSe QDs (Mn-CdSe) have been synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method. They are used in solar cells to study the effect of Mn doping in the performance of solar cells. Incident photon to current-conversion efficiency (IPCE) is used to record the effect of Mn-doping. Intensity modulated photovoltage and photocurrent spectroscopy (IMVS/PS) has been used to study the carrier dynamics in these solar cells. Additionally, the magnetic properties of Mn-CdSe QDs is studied and its possible origin is discussed. Moreover, CdS/CdSe QDs have been used to study the effect of liquid, gel and solid electrolyte in the performance and stability of the solar cells. Using IPCE spectra, the time decay measurements are presented and the possible reactions between the QD and the electrolytes are explained.

Solar energy utilization by solar cells and superblack absorbers

Energy Technology Data Exchange (ETDEWEB)

Bonnet, D; Selders, M

1975-10-31

A review is presented of the physical principles responsible for the characteristics of solar cells, with particular reference to Si homojunction and CdS--Cu/sub 2/S thin film devices. Electric power generation from solar cells still appears uncompetitive economically except in special circumstances, but heating from solar energy using selective absorbers with low reemission is more promising.

Hybrid Perovskites: Prospects for Concentrator Solar Cells.

Science.gov (United States)

Lin, Qianqian; Wang, Zhiping; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

2018-04-01

Perovskite solar cells have shown a meteoric rise of power conversion efficiency and a steady pace of improvements in their stability of operation. Such rapid progress has triggered research into approaches that can boost efficiencies beyond the Shockley-Queisser limit stipulated for a single-junction cell under normal solar illumination conditions. The tandem solar cell architecture is one concept here that has recently been successfully implemented. However, the approach of solar concentration has not been sufficiently explored so far for perovskite photovoltaics, despite its frequent use in the area of inorganic semiconductor solar cells. Here, the prospects of hybrid perovskites are assessed for use in concentrator solar cells. Solar cell performance parameters are theoretically predicted as a function of solar concentration levels, based on representative assumptions of charge-carrier recombination and extraction rates in the device. It is demonstrated that perovskite solar cells can fundamentally exhibit appreciably higher energy-conversion efficiencies under solar concentration, where they are able to exceed the Shockley-Queisser limit and exhibit strongly elevated open-circuit voltages. It is therefore concluded that sufficient material and device stability under increased illumination levels will be the only significant challenge to perovskite concentrator solar cell applications.

Industrial n-type solar cells with >20% cell efficiency

Energy Technology Data Exchange (ETDEWEB)

Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

2013-03-15

To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

Solar UV-B radiation and ethylene play a key role in modulating effective defenses against Anticarsia gemmatalis larvae in field-grown soybean.

Science.gov (United States)

Dillon, Francisco M; Tejedor, M Daniela; Ilina, Natalia; Chludil, Hugo D; Mithöfer, Axel; Pagano, Eduardo A; Zavala, Jorge A

2018-02-01

Solar UV-B radiation has been reported to enhance plant defenses against herbivore insects in many species. However, the mechanism and traits involved in the UV-B mediated increment of plant resistance are unknown in crops species, such as soybean. Here, we studied defense-related responses in undamaged and Anticarsia gemmatalis larvae-damaged leaves of two soybean cultivars grown under attenuated or full solar UV-B radiation. We determined changes in jasmonates, ethylene (ET), salicylic acid, trypsin protease inhibitor activity, flavonoids, and mRNA expression of genes related with defenses. ET emission induced by Anticarsia gemmatalis damage was synergistically increased in plants grown under solar UV-B radiation and was positively correlated with malonyl genistin concentration, trypsin proteinase inhibitor activity and expression of IFS2, and the pathogenesis protein PR2, while was negatively correlated with leaf consumption. The precursor of ET, aminocyclopropane-carboxylic acid, applied exogenously to soybean was sufficient to strongly induce leaf isoflavonoids. Our results showed that in field-grown soybean isoflavonoids were regulated by both herbivory and solar UV-B inducible ET, whereas flavonols were regulated by solar UV-B radiation only and not by herbivory or ET. Our study suggests that, although ET can modulate UV-B-mediated priming of inducible plant defenses, some plant defenses, such as isoflavonoids, are regulated by ET alone. © 2017 John Wiley & Sons Ltd.

Polymethylmethacrylate-based luminescent solar concentrators with bottom-mounted solar cells

International Nuclear Information System (INIS)

Zhang, Yi; Sun, Song; Kang, Rui; Zhang, Jun; Zhang, Ningning; Yan, Wenhao; Xie, Wei; Ding, Jianjun; Bao, Jun; Gao, Chen

2015-01-01

Graphical abstract: - Highlights: • Bottom-mounted luminescent solar concentrators on dye-doped plates were studied. • The mechanism of transport process was proposed. • The fabricated luminescent solar concentrator achieved a gain of 1.38. • Power conversion efficiency of 5.03% was obtained with cell area coverage of 27%. • The lowest cost per watt of $1.89 was optimized with cell area coverage of 18%. - Abstract: Luminescent solar concentrators offer an attractive approach to concentrate sunlight economically without tracking, but the narrow absorption band of luminescent materials hinders their further development. This paper describes bottom-mounted luminescent solar concentrators on dye-doped polymethylmethacrylate plates that absorb not only the waveguided light but also the transmitted sunlight and partial fluorescent light in the escape cone. A series of bottom-mounted luminescent solar concentrators with size of 78 mm × 78 mm × 7 mm were fabricated and their gain and power conversion efficiency were investigated. The transport process of the waveguided light and the relationship between the bottom-mounted cells were studied to optimize the performance of the device. The bottom-mounted luminescent solar concentrator with cell area coverage of 9% displayed a cell gain of 1.38, to our best knowledge, which is the highest value for dye-doped polymethylmethacrylate plate luminescent solar concentrators. Power conversion efficiency as high as 5.03% was obtained with cell area coverage of 27%. Furthermore, the bottom-mounted luminescent solar concentrator was found to have a lowest cost per watt of $1.89 with cell area coverage of 18%. These results suggested that the fabricated bottom-mounted luminescent solar concentrator may have a potential in low-cost building integrated photovoltaic application

Recent Advances in Organic Solar Cells

Directory of Open Access Journals (Sweden)

Thomas Kietzke

2007-01-01

Full Text Available Solar cells based on organic semiconductors have attracted much attention. The thickness of the active layer of organic solar cells is typically only 100 nm thin, which is about 1000 times thinner than for crystalline silicon solar cells and still 10 times thinner than for current inorganic thin film cells. The low material consumption per area and the easy processing of organic semiconductors offer a huge potential for low cost large area solar cells. However, to compete with inorganic solar cells the efficiency of organic solar cells has to be improved by a factor of 2-3. Several organic semiconducting materials have been investigated so far, but the optimum material still has to be designed. Similar as for organic light emitting devices (OLED small molecules are competing with polymers to become the material of choice. After a general introduction into the device structures and operational principles of organic solar cells the three different basic types (all polymer based, all small molecules based and small molecules mixed with polymers are described in detail in this review. For each kind the current state of research is described and the best of class reported efficiencies are listed.

Non-toxic silver iodide (AgI) quantum dots sensitized solar cells

International Nuclear Information System (INIS)

Moosakhani, S.; Sabbagh Alvani, A.A.; Sarabi, A.A.; Sameie, H.; Salimi, R.; Kiani, S.; Ebrahimi, Y.

2014-01-01

Highlights: • We have demonstrated AgI sensitized solar cell for the first time. • Obtained mesoporous titania powders possessed small crystallite size, high purity and surface area, and developed mesopores with a narrow pore size distribution. • Photovoltaic measurements revealed the electron injection from AgI to TiO 2 . • The assembled AgI-QD solar cells yielded a power conversion efficiency of 0.64% under one sun illumination. • AgI may be a suitable candidate material for use as a non-toxic sensitizer in QDSSC. - Abstract: The present study reports the performance of a new photosensitizer -AgI quantum dots (QDs)- and mesoporous titania (TiO 2 ) nanocrystals synthesized by sol–gel (SG) method for solar cells. Furthermore, the effects of n-heptane on the textural properties of TiO 2 nanocrystals were comprehensively investigated by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), N 2 adsorption–desorption measurements, and UV–vis spectroscopy. TiO 2 powders exhibited an anatase-type mesoporous structure with a high surface area of 89.7 m 2 /g. Afterwards, the QDs were grown on mesoporous TiO 2 surface to fabricate a TiO 2 /AgI electrode by a successive ionic layer adsorption and reaction (SILAR) deposition route. Current–voltage characteristics and electrochemical impedance spectroscopy (EIS) data demonstrated that the injection of photoexcited electrons from AgI QDs into the TiO 2 matrix produces photocurrents. The assembled AgI-QD solar cells yielded a power conversion efficiency of 0.64% and a short-circuit current of 2.13 mA/cm 2 under one sun illumination

Semiconductor materials for solar photovoltaic cells

CERN Document Server

Wong-Ng, Winnie; Bhattacharya, Raghu

2016-01-01

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

International Nuclear Information System (INIS)

Delaney, A.; Chin, K.; Street, S.; Newman, F.; Aguilar, L.; Ignatiev, A.; Monier, C.; Velela, M.; Freundlich, A.

1998-01-01

This work reports the first InP solar cells, InP/In 0.53 Ga 0.47 As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

A simple structure of Cu2ZnSnS4/CdS solar cells prepared by sputtering

Science.gov (United States)

Li, Zhishan; Wang, Shurong; Ma, Xun; Yang, Min; Jiang, Zhi; Liu, Tao; Lu, Yilei; Liu, Sijia

2017-12-01

In this work, Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by annealing of sputtered ZnS/Sn/CuS precursors at 580 ℃ for 15 min. As a try, the CZTS solar cells were fabricated using simple structure of Mo-coated SLG/CZTS/CdS/Al and traditional structure of Mo-coated SLG/CZTS/CdS/i-ZnO/In2O3:SnO2 (ITO)/Al, respectively. The results show that the CZTS device with simple structure can achieve same level of the open circuit voltage (Voc) compared with that of traditional structure. In addition, the power conversion efficiency of 2.95% and 3.59% were obtained with simple structure and traditional structure, respectively. The CZTS solar cell with simple structure provides a promising way and an easy process to prepare high-performance CZTS thin film solar cells which is available to large-scale industrial production in the future.

Spatial Atmospheric Pressure Atomic Layer Deposition of Tin Oxide as an Impermeable Electron Extraction Layer for Perovskite Solar Cells with Enhanced Thermal Stability.

Science.gov (United States)

Hoffmann, Lukas; Brinkmann, Kai O; Malerczyk, Jessica; Rogalla, Detlef; Becker, Tim; Theirich, Detlef; Shutsko, Ivan; Görrn, Patrick; Riedl, Thomas

2018-02-14

Despite the notable success of hybrid halide perovskite-based solar cells, their long-term stability is still a key-issue. Aside from optimizing the photoactive perovskite, the cell design states a powerful lever to improve stability under various stress conditions. Dedicated electrically conductive diffusion barriers inside the cell stack, that counteract the ingress of moisture and prevent the migration of corrosive halogen species, can substantially improve ambient and thermal stability. Although atomic layer deposition (ALD) is excellently suited to prepare such functional layers, ALD suffers from the requirement of vacuum and only allows for a very limited throughput. Here, we demonstrate for the first time spatial ALD-grown SnO x at atmospheric pressure as impermeable electron extraction layers for perovskite solar cells. We achieve optical transmittance and electrical conductivity similar to those in SnO x grown by conventional vacuum-based ALD. A low deposition temperature of 80 °C and a high substrate speed of 2.4 m min -1 yield SnO x layers with a low water vapor transmission rate of ∼10 -4 gm -2 day -1 (at 60 °C/60% RH). Thereby, in perovskite solar cells, dense hybrid Al:ZnO/SnO x electron extraction layers are created that are the key for stable cell characteristics beyond 1000 h in ambient air and over 3000 h at 60 °C. Most notably, our work of introducing spatial ALD at atmospheric pressure paves the way to the future roll-to-roll manufacturing of stable perovskite solar cells.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

Science.gov (United States)

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Mn-doped CdS quantum dots sensitized hierarchical TiO2 flower-rod for solar cell application

International Nuclear Information System (INIS)

Yu, Libo; Li, Zhen; Liu, Yingbo; Cheng, Fa; Sun, Shuqing

2014-01-01

A double-layered TiO 2 film which three dimensional (3D) flowers grown on highly ordered self-assembled one dimensional (1D) TiO 2 nanorods was synthesized directly on transparent fluorine-doped tin oxide (FTO) conducting glass substrate by a facile hydrothermal method and was applied as photoanode in Mn-doped CdS quantum dots sensitized solar cells (QDSSCs). The 3D TiO 2 flowers with the increased surface areas can adsorb more QDs, which increased the absorption of light; meanwhile 1D TiO 2 nanorods beneath the flowers offered a direct electrical pathway for photogenerated electrons, accelerating the electron transfer rate. A typical type II band alignment which can effectively separate photogenerated excitons and reduce recombination of electrons and holes was constructed by Mn-doped CdS QDs and TiO 2 flower-rod. The incident photon-to-current conversion efficiency (IPCE) of the Mn-doped CdS/TiO 2 flower-rod solar cell reached to 40% with the polysulfide electrolyte filled in the solar cell. The power conversion efficiency (PCE) of 1.09% was obtained with the Mn-doped CdS/TiO 2 flower-rod solar cell under one sun illumination (AM 1.5G, 100 mW/cm 2 ), which is 105.7% higher than that of the CdS/TiO 2 nanorod solar cell (0.53%).

Quantum-Tuned Multijunction Solar Cells

Science.gov (United States)

Koleilat, Ghada I.

Multijunction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. In this dissertation, we first report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device's collecting electrodes---the heterointerface with electron accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact---for maximum efficiency. Room-temperature processing enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low thermal-budget larger-bandgap front cell. We report an electrode strategy that enables a depleted heterojunction CQD PV device to be fabricated entirely at room temperature. We develop a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells suitable for use as the back junction in tandem solar cells. We further report in this work the first efficient CQD tandem solar cells. We use a graded recombination layer (GRL) to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell. The recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We conclude our dissertation by presenting the generalized conditions for design of efficient graded recombination layer solar devices. We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the

Theoretical investigation on heterojunction solar cell

International Nuclear Information System (INIS)

Prema, K.; Geetha, K.

1986-11-01

The study of thin film solar cells has proved that the surface is rough. A two-dimensional method based on the integral equation technique to analyse thin film solar cells has been developed by DeMey et al. In this paper we present our analysis of a thin film solar cell using the above techniques. Variation of the minority carrier concentration, the saturation current and the junction current of the solar cell with surface roughness is presented. (author). 8 refs, 4 figs

Solar cell materials developing technologies

CERN Document Server

Conibeer, Gavin J

2014-01-01

This book presents a comparison of solar cell materials, including both new materials based on organics, nanostructures and novel inorganics and developments in more traditional photovoltaic materials. It surveys the materials and materials trends in the field including third generation solar cells (multiple energy level cells, thermal approaches and the modification of the solar spectrum) with an eye firmly on low costs, energy efficiency and the use of abundant non-toxic materials.

Rehydrating dye sensitized solar cells

Directory of Open Access Journals (Sweden)

Christian Hellert

2017-05-01

Full Text Available Dye sensitized solar cells (DSSCs are silicon free, simply producible solar cells. Longevity, however, is a longstanding problem for DSSCs. Due to liquid electrolytes being commonly used, evaporation of the electrolyte causes a dramatic drop in electric output as cells continue to be used unmaintained. Stopping evaporation has been tried in different ways in the past, albeit with differing degrees of success. In a recent project, a different route was chosen, exploring ways of revitalizing DSSCs after varying periods of usage. For this, we focused on rehydration of the cells using distilled water as well as the electrolyte contained in the cells. The results show a significant influence of these rehydration procedures on the solar cell efficiency. In possible applications of DSSCs in tents etc., morning dew may thus be used for rehydration of solar cells. Refillable DSSCs can also be used in tropical climates or specific types of farms and greenhouses where high humidity serves the purpose of rehydrating DSSCs.

Development of Inorganic Solar Cells by Nanotechnology

Institute of Scientific and Technical Information of China (English)

Yafei Zhang; Huijuan Geng; Zhihua Zhou; Jiang Wu; Zhiming Wang; Yaozhong Zhang; Zhongli Li; Liying Zhang; Zhi Yang; Huey Liang Hwang

2012-01-01

Inorganic solar cells, as durable photovoltaic devices for harvesting electric energy from sun light,have received tremendous attention due to the fear of exhausting the earth’s energy resources and damaging the living environment due to greenhouse gases. Some recent developments in nanotechnology have opened up new avenues for more relevant inorganic solar cells produced by new photovoltaic conversion concepts and effective solar energy harvesting nanostructures. In this review, the multiple exciton generation effect solar cells, hot carrier solar cells, one dimensional material constructed asymmetrical schottky barrier arrays, noble nanoparticle induced plasmonic enhancement, and light trapping nanostructured semiconductor solar cells are highlighted.

Deuterium markers in CdS and Zn(O,S) buffer layers deposited by solution growth for Cu(In,Ga)Se{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Witte, Wolfram; Eicke, Axel; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Souza, Roger A. de; Martin, Manfred [Institute of Physical Chemistry, RWTH Aachen University (Germany)

2017-12-15

This contribution describes an easy and cheap approach to introduce deuterium (D) as an isotopic marker into the commonly used buffer layer materials CdS and Zn(O,S) for Cu(In,Ga)Se{sub 2} (CIGS) thin-film solar cells. D was successfully incorporated during the growth of Zn(O,S) and CdS buffer layers by chemical bath deposition (CBD) with D{sub 2}O. CIGS solar cells prepared with D-containing buffers grown by CBD exhibit power conversion efficiencies above 16%, that is, the D content has no detrimental effect on the performance or other solar cell parameters of the devices. With depth profiles obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS) we clearly detect the intentionally incorporated D within the solution-grown Zn(O,S) buffer. Assuming that D is present as OD, we compare the amount of OD within the Zn(O,S) layer with the amount of OH on the surface of the subsequent sputtered (Zn,Mg)O layer. Possible applications and future experiments of the method inserting isotopic markers such as D in functional layers of chalcopyrite-type thin-film solar cells and beyond are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photon management in solar cells

CERN Document Server

Rau, Uwe; Gombert, Andreas

2015-01-01

Written by renowned experts in the field of photon management in solar cells, this one-stop reference gives an introduction to the physics of light management in solar cells, and discusses the different concepts and methods of applying photon management. The authors cover the physics, principles, concepts, technologies, and methods used, explaining how to increase the efficiency of solar cells by splitting or modifying the solar spectrum before they absorb the sunlight. In so doing, they present novel concepts and materials allowing for the cheaper, more flexible manufacture of solar cells and systems. For educational purposes, the authors have split the reasons for photon management into spatial and spectral light management. Bridging the gap between the photonics and the photovoltaics communities, this is an invaluable reference for materials scientists, physicists in industry, experimental physicists, lecturers in physics, Ph.D. students in physics and material sciences, engineers in power technology, appl...

Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

NARCIS (Netherlands)

Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

2011-01-01

We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

Predicted solar cell edge radiation effects

International Nuclear Information System (INIS)

Gates, M.T.

1993-01-01

The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

High performance a-Si solar cells and new fabrication methods for a-Si solar cells

Science.gov (United States)

Nakano, S.; Kuwano, Y.; Ohnishi, M.

1986-12-01

The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

Fabrication and characterization of DBM/p-Si heterojunction solar cell

International Nuclear Information System (INIS)

El-Nahass, M.M.; Kamel, M.A.; Atta, A.A.; Huthaily, S.Y.

2013-01-01

Hybrid organic/inorganic solar cell was fabricated by depositing a thin film of p-N,N dimethylaminobenzylidenemalononitrile (DBM) onto p-Si substrate. DBM is a donor–acceptor disubstituted benzenes dye known as molecular rotors and highly polar molecular compounds. Its powder has a polycrystalline structure, while nano-crystallite rods are formed in the as-deposited film. The dark current density–voltage (J–V) characteristics of Au/DBM/p-Si/Al heterojunction device measured at different temperatures ranging from 291 to 353 K have been investigated. The operating conduction mechanisms, the series and shunt resistances, the rectification ratio, the ideality factor, the effective barrier height, and the total trap concentration were determined. The capacitance–voltage (C–V) characteristics indicated that the junction is of abrupt nature. The built-in voltage and the carrier concentration distributed through the depletion region were estimated. Under illumination, the DBM/p-Si cell showed photovoltaic properties and the photovoltaic parameters were evaluated. -- Highlights: ► The molecular rotors DBM dye can be used to manufacture D/A solar cells. ► Since D/A are situated in the DBM molecule, we ensure photoinduced D → A electron transfer. ► The DBM film is grown as nano-rods. ► The most of the DBM bulk of the cell contributes to the generation of external current.

Fabrication and characterization of DBM/p-Si heterojunction solar cell

Energy Technology Data Exchange (ETDEWEB)

El-Nahass, M.M.; Kamel, M.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Atta, A.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Physics Department, Faculty of Science, Taif University, Taif, 888 Taif (Saudi Arabia); Huthaily, S.Y., E-mail: s_huthaily@yahoo.com [Physics Department, Faculty of Education, Hodeidah University, Alduraihimi, 3114 Hodeidah (Yemen)

2013-01-15

Hybrid organic/inorganic solar cell was fabricated by depositing a thin film of p-N,N dimethylaminobenzylidenemalononitrile (DBM) onto p-Si substrate. DBM is a donor-acceptor disubstituted benzenes dye known as molecular rotors and highly polar molecular compounds. Its powder has a polycrystalline structure, while nano-crystallite rods are formed in the as-deposited film. The dark current density-voltage (J-V) characteristics of Au/DBM/p-Si/Al heterojunction device measured at different temperatures ranging from 291 to 353 K have been investigated. The operating conduction mechanisms, the series and shunt resistances, the rectification ratio, the ideality factor, the effective barrier height, and the total trap concentration were determined. The capacitance-voltage (C-V) characteristics indicated that the junction is of abrupt nature. The built-in voltage and the carrier concentration distributed through the depletion region were estimated. Under illumination, the DBM/p-Si cell showed photovoltaic properties and the photovoltaic parameters were evaluated. -- Highlights: Black-Right-Pointing-Pointer The molecular rotors DBM dye can be used to manufacture D/A solar cells. Black-Right-Pointing-Pointer Since D/A are situated in the DBM molecule, we ensure photoinduced D {yields} A electron transfer. Black-Right-Pointing-Pointer The DBM film is grown as nano-rods. Black-Right-Pointing-Pointer The most of the DBM bulk of the cell contributes to the generation of external current.

Hybrid emitter all back contact solar cell

Science.gov (United States)

Loscutoff, Paul; Rim, Seung

2016-04-12

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

Self-ordering anodized nanotubes: Enhancing the performance by surface plasmon for dye-sensitized solar cell

Energy Technology Data Exchange (ETDEWEB)

Agarwala, S., E-mail: agarwala.shweta@gmail.com [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive, Singapore 117576 (Singapore); Ho, G.W. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive, Singapore 117576 (Singapore)

2012-05-15

In the present work, electrochemical anodization has been used to prepare uniform TiO{sub 2} nanotube array photoelectrode. The average internal diameter, tube length and wall thickness of the optimized morphology is {approx}180 nm, 14 {mu}m and 10 nm, respectively. It was found that the tube diameter increases with the anodization voltage. Diffraction data reveals that the nanotubes consist solely of anatase phase. Back illuminated geometry of dye-sensitized solar cell (DSSC), with nanotubes grown at 60 V for 2 h, gave a cell performance of 4.5%. TiO{sub 2} nanotubes are loaded with silver (Ag) nanoparticles synthesized by a hydrothermal route. The Ag particle size is controlled resulting in solar conversion efficiency to increase by 22%. The DSSC based on TiO{sub 2} nanotube with Ag nanoparticles shows power conversion efficiency of 5.5%. Detailed characterization are performed, presented and discussed. - Graphical abstract: Enhanced solar conversion efficiency of dye-sensitized solar cells by decorating TiO{sub 2} nanotube array with Ag nanoparticles. Highlights: Black-Right-Pointing-Pointer Uniform array of TiO{sub 2} nanotubes synthesized via electrochemical anodization. Black-Right-Pointing-Pointer Back illuminated DSSC gave a cell performance of 4.5%. Black-Right-Pointing-Pointer TiO{sub 2} nanotubes are loaded with Ag nanoparticles, which increased the power conversion efficiency to 5.5%.

ZnO nanorods/AZO photoanode for perovskite solar cells fabricated in ambient air

Science.gov (United States)

La Ferrara, Vera; De Maria, Antonella; Rametta, Gabriella; Della Noce, Marco; Vittoria Mercaldo, Lucia; Borriello, Carmela; Bruno, Annalisa; Delli Veneri, Paola

2017-08-01

ZnO nanorods are a good candidate for replacing standard photoanodes, such as TiO2, in perovskite solar cells and in principle superseding the high performances already obtained. This is possible because ZnO nanorods have a fast electron transport rate due to their large surface area. An array of ZnO nanorods is grown by chemical bath deposition starting from Al-doped ZnO (AZO) used both as a seed layer and as an efficient transparent anode in the visible spectral range. In particular, in this work we fabricate methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells using glass/AZO/ZnO nanorods/perovskite/Spiro-OMeTAD/Au as the architecture. The growth of ZnO nanorods has been optimized by varying the precursor concentrations, growth time and solution temperature. All the fabrication process and photovoltaic characterizations have been carried out in ambient air and the devices have not been encapsulated. Power conversion efficiency as high as 7.0% has been obtained with a good stability over 20 d. This is the highest reported value to the best of our knowledge and it is a promising result for the development of perovskite solar cells based on ZnO nanorods and AZO.

Semiconductor quantum dot-sensitized solar cells.

Science.gov (United States)

Tian, Jianjun; Cao, Guozhong

2013-10-31

Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

Industrial Silicon Wafer Solar Cells

OpenAIRE

Neuhaus, Dirk-Holger; Münzer, Adolf

2007-01-01

In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

Flexible silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

2009-08-15

In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

Solar UV-B radiation modulates chemical defenses against Anticarsia gemmatalis larvae in leaves of field-grown soybean.

Science.gov (United States)

Dillon, Francisco M; Chludil, Hugo D; Zavala, Jorge A

2017-09-01

Although it is well known that solar ultraviolet B (UV-B) radiation enhances plant defenses, there is less knowledge about traits that define insect resistance in field-grown soybean. Here we study the effects of solar UV-B radiation on: a) the induction of phenolic compounds and trypsin proteinase inhibitors (TPI) in soybean undamaged leaves or damaged by Anticarsia gemmatalis neonates during six days, and b) the survival and mass gain of A. gemmatalis larvae that fed on soybean foliage. Two soybean cultivars (cv.), Charata and Williams, were grown under plastic with different transmittance to solar UV-B radiation, which generated two treatments: ambient UV-B (UVB+) and reduced UV-B (UVB-) radiation. Solar UV-B radiation decreased survivorship by 30% and mass gain by 45% of larvae that fed on cv. Charata, but no effect was found in those larvae that fed on cv. Williams. TPI activity and malonyl genistin were induced by A. gemmatalis damage in both cultivars, but solar UV-B radiation and damage only synergistically increased the induction of these compounds in cv. Williams. Although TPI activity and genistein derivatives were induced by herbivory, these results did not explain the differences found in survivorship and mass gain of larvae that fed on cv. Charata. However, we found a positive association between lower larval performance and the presence of two quercetin triglycosides and a kaempferol triglycoside in foliage of cv. Charata, which were identified by HPLC-DAD/MS 2 . We conclude that exclusion of solar UV-B radiation reduce resistance to A. gemmatalis, due to a reduction in flavonol concentration in a cultivar that has low levels of genistein derivatives like cv. Charata. Copyright © 2017 Elsevier Ltd. All rights reserved.

Solar cells: An environment-benign energy source?

International Nuclear Information System (INIS)

Alsema, E.; Van Engelenburg, B.

1993-01-01

Attention is paid to a study on the environmental aspects of solar cell production techniques and the possibility of recycling solar cell materials. In the study the following types of solar cell modules are dealt with: CdTe and CuInSe 2 , amorphous silicon, crystalline silicon, and GaAs. It appears that silicon solar cells have minor environmental effects and are controllable. However, attention should be paid to the energy consumption and the use of etching and purification materials during the production of solar cells, and the emission of heavy metals from f.e. CdTe/CIS solar cells during and after usage. Without effective recycling enough supplies of indium, selenium and tellurium cannot be guaranteed. 3 figs., 1 ill

Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

Directory of Open Access Journals (Sweden)

Kangho Kim

2013-01-01

Full Text Available The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.

Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

NARCIS (Netherlands)

Frijters, C.H.; Poodt, P.; Illeberi, A.

2016-01-01

Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Science.gov (United States)

Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

1990-01-01

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Non-toxic silver iodide (AgI) quantum dots sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Moosakhani, S. [Faculty of Polymer Engineering and Color Technology, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran (Iran, Islamic Republic of); Color and Polymer Research Center (CPRC), Amirkabir University of Technology, P.O. Box 15875-4413, Tehran (Iran, Islamic Republic of); Sabbagh Alvani, A.A., E-mail: sabbagh_alvani@aut.ac.ir [Color and Polymer Research Center (CPRC), Amirkabir University of Technology, P.O. Box 15875-4413, Tehran (Iran, Islamic Republic of); Sarabi, A.A. [Faculty of Polymer Engineering and Color Technology, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran (Iran, Islamic Republic of); Sameie, H.; Salimi, R.; Kiani, S.; Ebrahimi, Y. [Faculty of Polymer Engineering and Color Technology, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran (Iran, Islamic Republic of); Color and Polymer Research Center (CPRC), Amirkabir University of Technology, P.O. Box 15875-4413, Tehran (Iran, Islamic Republic of)

2014-12-15

Highlights: • We have demonstrated AgI sensitized solar cell for the first time. • Obtained mesoporous titania powders possessed small crystallite size, high purity and surface area, and developed mesopores with a narrow pore size distribution. • Photovoltaic measurements revealed the electron injection from AgI to TiO{sub 2}. • The assembled AgI-QD solar cells yielded a power conversion efficiency of 0.64% under one sun illumination. • AgI may be a suitable candidate material for use as a non-toxic sensitizer in QDSSC. - Abstract: The present study reports the performance of a new photosensitizer -AgI quantum dots (QDs)- and mesoporous titania (TiO{sub 2}) nanocrystals synthesized by sol–gel (SG) method for solar cells. Furthermore, the effects of n-heptane on the textural properties of TiO{sub 2} nanocrystals were comprehensively investigated by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), N{sub 2} adsorption–desorption measurements, and UV–vis spectroscopy. TiO{sub 2} powders exhibited an anatase-type mesoporous structure with a high surface area of 89.7 m{sup 2}/g. Afterwards, the QDs were grown on mesoporous TiO{sub 2} surface to fabricate a TiO{sub 2}/AgI electrode by a successive ionic layer adsorption and reaction (SILAR) deposition route. Current–voltage characteristics and electrochemical impedance spectroscopy (EIS) data demonstrated that the injection of photoexcited electrons from AgI QDs into the TiO{sub 2} matrix produces photocurrents. The assembled AgI-QD solar cells yielded a power conversion efficiency of 0.64% and a short-circuit current of 2.13 mA/cm{sup 2} under one sun illumination.

Low-temperature processed ultrathin TiO2 for efficient planar heterojunction perovskite solar cells

International Nuclear Information System (INIS)

Huang, Xiaokun; Hu, Ziyang; Xu, Jie; Wang, Peng; Zhang, Jing; Zhu, Yuejin

2017-01-01

Highlights: • An ultrathin and discrete TiO 2 (u-TiO 2 ) was fabricated at low temperature. • High-performance perovskite solar cells based u-TiO 2 was realized. • u-TiO 2 between perovskite and FTO functions as a bridge for electron transport. • u-TiO 2 accelerates electron transfer and alleviates charge recombination. - Abstract: A compact TiO 2 (c-TiO 2 ) layer fabricated by spin coating or spray pyrolysis following a high-temperature sintering is a routine in high-performance planar heterojunction perovskite solar cells. Here, we demonstrate an effective low-temperature approach to fabricate an ultrathin and discrete TiO 2 (u-TiO 2 ) for enhancing photovoltaic performance of perovskite solar cells. Via hydrolysis of low-concentration TiCl 4 solution at 70 °C, u-TiO 2 was grown on a fluorine doped tin oxide (FTO) substrate, forming the electron selective contact with the photoactive CH 3 NH 3 PbI 3 film. The perovskite solar cell using u-TiO 2 achieves an efficiency of 13.42%, which is compared to 13.56% of the device using c-TiO 2 prepared by high-temperature sintering. Cyclic voltammetry, steady-state photoluminescence spectroscopy and electrical impedance spectroscopy were conducted to study interface engineering and charge carrier dynamics. Our results suggest that u-TiO 2 functions as a bridge for electron transport between perovskite and FTO, which accelerates electron transfer and alleviates charge recombination.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

Iron sulphide solar cells

Science.gov (United States)

Ennaoui, A.; Tributsch, H.

1984-12-01

The abundant, naturally occurring natural compound pyrite (FeS2) can be used as a semiconducting material for photoelectrochemical and photovoltaic solar cells. Unlike most of the intensively studied photoactive materials, pyrite solar cell production would never be limited by the availability of the elements or by their compatibility with the environment. An energy gap of 0.95 eV has been determined for pyrite, and it is noted that the theoretical efficiency limit for solar energy conversion in this material is of the order of 15-20 percent.

Machine for welding solar cell connections

Energy Technology Data Exchange (ETDEWEB)

Lorans, D.Y.

1977-08-09

A machine for welding a connection wire over a solar cell electrode is described which comprises a base, a welding mount for the solar cell which is supported on the base, means for holding the solar cell on the welding mount, welding electrodes, means to lower the welding electrodes over the solar cell and the connection wire superimposed thereon, means for applying electric current pulses to said welding electrodes. It is characterized by the fact that it further comprises means for imparting to said mount an alternating transverse movement in relation to said base before and during the welding operation.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells.

Science.gov (United States)

Etgar, Lioz

2013-02-04

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Directory of Open Access Journals (Sweden)

Lioz Etgar

2013-02-01

Full Text Available Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Science.gov (United States)

Etgar, Lioz

2013-01-01

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered. PMID:28809318

Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns

Energy Technology Data Exchange (ETDEWEB)

Baudrit, Mathieu; Algora, Carlos [Instituto de Energia Solar, Universidad Politecnica de Madrid (Spain)

2010-02-15

A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar cell that was grown lattice matched on a GaAs substrate by MOVPE, which has an efficiency of 32.6% at 1000 suns. Using previously calibrated models developed at our institution, IES-UPM, together with Silvaco ATLAS TCAD software, we reproduced the characteristics of the world-record solar cell, and then determined a cell configuration that would yield greater efficiency by using an optimization routine to hone the doping concentration and the thickness of each layer. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Nanostructuring of Solar Cell Surfaces

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

Flexible Solar Cells

Science.gov (United States)

1994-01-01

Solar cell "modules" are plastic strips coated with thin films of photovoltaic silicon that collect solar energy for instant conversion into electricity. Lasers divide the thin film coating into smaller cells to build up voltage. Developed by Iowa Thin Film Technologies under NASA and DOE grants, the modules are used as electrical supply for advertising displays, battery rechargers for recreational vehicles, and to power model airplanes. The company is planning other applications both in consumer goods and as a power source in underdeveloped countries.

Extended Temperature Solar Cell Technology Development

Science.gov (United States)

Landis, Geoffrey A.; Jenkins, Phillip; Scheiman, David; Rafaelle, Ryne

2004-01-01

Future NASA missions will require solar cells to operate both in regimes closer to the sun, and farther from the sun, where the operating temperatures will be higher and lower than standard operational conditions. NASA Glenn is engaged in testing solar cells under extended temperature ranges, developing theoretical models of cell operation as a function of temperature, and in developing technology for improving the performance of solar cells for both high and low temperature operation.

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Crossed BiOI flake array solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Kewei; Jia, Falong; Zhang, Lizhi [Key Laboratory of Pesticide and Chemical Biology of Ministry of Education, College of Chemistry, Central China Normal University, Wuhan (China); Zheng, Zhi [Institute of Surface Micro and Nano Materials, Xuchang University (China)

2010-12-15

We report a new kind of solar cell based on crossed flake-like BiOI arrays for the first time. The BiOI flake arrays were fabricated on an FTO glass with a TiO{sub 2} block layer at room temperature by successive ionic layer adsorption and reaction (SILAR) method. The resulting BiOI flake array solar cell exhibited enhanced photovoltaic performance under solar illumination. This work provides an attractive and new solar cell system and a facile route to fabricate low cost and non-toxic solar cell. (author)

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

2015-09-30

Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

Characterization of multicrystalline solar cells

International Nuclear Information System (INIS)

Malik, A.Q.; Chong Chew Hah; Chan Siang Khwang; Tan Kha Sheng; Lim Chee Ming

2006-01-01

The evaluation and assessment of the performance of photovoltaic (PV) cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Most noticeable of all these parameters in the PV conversion efficiency η, defined as the maximum electrical power P max produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (Sc). These conditions refer to the spectrum (AM 1.5), solar radiation intensity (1000 Wm -2 ), cell temperature (25 ± 2 degree C) and wind speed (2 mph). Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstrate that the short circuit current (I SC ) of the solar cell decreases when irradiance is less than 1000 Wm -2 irrespective of the working temperature of the cell

Characterisation of multicrystalline solar cells

Directory of Open Access Journals (Sweden)

A.Q. Malik

2017-10-01

Full Text Available The evaluation and assessment of the performance of photovoltaic (PV cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Mo st noticeable of all these parameters is the PV conversion efficiency η, defined as the maximum electrical power Pmax produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (STC. These conditions refer to the spectrum (AM 1.5, solar radiation intensity (1000 Wm-2, cell temperature (25 ±2oC and wind speed (2 mph. Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstratethat the short circuit current (ISC of the solar cell decreases when irradiance is less than 1000 Wm-2 irrespective of the working temperature of the cell.

Effect of hybrid carbon nanotubes-bimetallic composite particles on the performance of polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Sun-Young [Department of Material Processing, Korea Institute of Materials Science, Changwon 641-831 (Korea); Division of Applied Chemical Engineering, Department of Polymer Engineering, Pukyong National University, Busan 608-739 (Korea); Kim, Whi-Dong; Kim, Soo H. [Department of Nanosystem and Nanoprocess Engineering, Pusan National University, 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea); Kim, Do-Geun; Kim, Jong-Kuk; Jeong, Yong-Soo; Kang, Jae-Wook [Department of Material Processing, Korea Institute of Materials Science, Changwon 641-831 (Korea); Kim, Joo Hyun [Division of Applied Chemical Engineering, Department of Polymer Engineering, Pukyong National University, Busan 608-739 (Korea); Lee, Jae Keun [School of Mechanical Engineering, Pusan National University, 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea)

2010-05-15

Hybrid carbon nanotubes-bimetallic composite nanoparticles with sea urchin-like structures (SU-CNTs) were introduced to bulk heterojunction polymer-fullerene solar cells to improve their performance. The SU-CNTs were composed of multi-walled CNTs, which were grown radially over the entire surface of the bimetallic nanoparticles composed of Ni and Al. SU-CNTs with a precisely controlled length of {proportional_to}200{+-}40 nm were dispersed homogenously in a polymer active layer. Compared with a pristine device (i.e., without SU-CNTs), the SU-CNTs-doped organic photovoltaic (OPV) cells showed an improved short-circuit current density and power conversion efficiency from 7.5 to 9.5 mA/cm{sup 2} and 2.1{+-}0.1% to 2.2{+-}0.2% (max. 2.5%), respectively. The specially designed SU-CNTs have strong potential as an effective exciton dissociation medium in the polymer active layer to enhance the performance of organic solar cells. (author)

Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

Energy Technology Data Exchange (ETDEWEB)

Rohatgi, A.

2007-11-01

This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

Perovskite Solar Cells: Progress and Advancements

Directory of Open Access Journals (Sweden)

Naveen Kumar Elumalai

2016-10-01

Full Text Available Organic–inorganic hybrid perovskite solar cells (PSCs have emerged as a new class of optoelectronic semiconductors that revolutionized the photovoltaic research in the recent years. The perovskite solar cells present numerous advantages include unique electronic structure, bandgap tunability, superior charge transport properties, facile processing, and low cost. Perovskite solar cells have demonstrated unprecedented progress in efficiency and its architecture evolved over the period of the last 5–6 years, achieving a high power conversion efficiency of about 22% in 2016, serving as a promising candidate with the potential to replace the existing commercial PV technologies. This review discusses the progress of perovskite solar cells focusing on aspects such as superior electronic properties and unique features of halide perovskite materials compared to that of conventional light absorbing semiconductors. The review also presents a brief overview of device architectures, fabrication methods, and interface engineering of perovskite solar cells. The last part of the review elaborates on the major challenges such as hysteresis and stability issues in perovskite solar cells that serve as a bottleneck for successful commercialization of this promising PV technology.

High Radiation Resistance IMM Solar Cell

Science.gov (United States)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Work Station For Inverting Solar Cells

Science.gov (United States)

Feder, H.; Frasch, W.

1982-01-01

Final work station along walking-beam conveyor of solar-array assembly line turns each pretabbed solar cell over, depositing it back-side-up onto landing pad, which centers cell without engaging collector surface. Solar cell arrives at inverting work station collector-side-up with two interconnect tabs attached to collector side. Cells are inverted so that second soldering operation takes place in plain view of operator. Inversion protects collector from damage when handled at later stages of assembly.

Semi-transparent solar cells

International Nuclear Information System (INIS)

Sun, J; Jasieniak, J J

2017-01-01

Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies. (topical review)

Semi-transparent solar cells

Science.gov (United States)

Sun, J.; Jasieniak, J. J.

2017-03-01

Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

Proton irradiation effects of amorphous silicon solar cell for solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

1997-03-01

Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

Science.gov (United States)

Caselli, Derek; Liu, Zhicheng; Shelhammer, David; Ning, Cun-Zheng

2014-10-08

Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer

Directory of Open Access Journals (Sweden)

A. Gonzalez-Cisneros

2013-01-01

Full Text Available In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010. The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film and the close-spaced vapor transport (for CdTe film techniques.

Development of Inorganic Solar Cells by Nano-technology

Institute of Scientific and Technical Information of China (English)

Yafei Zhang; HueyLiang Hwang; Huijuan Geng; Zhihua Zhou; Jiang Wu; Zhiming Wang; Yaozhong Zhang; Zhongli Li; Liying Zhang; Zhi Yang

2012-01-01

Inorganic solar cells, as durable photovoltaic devices for harvesting electric energy from sun light, have received tremendous attention due to the fear of exhausting the earth’s energy resources and damaging the living environment due to greenhouse gases. Some recent developments in nanotechnology have opened up new avenues for more relevant inorganic solar cells produced by new photovoltaic conversion concepts and effective solar energy harvesting nanostructures. In this review, the multiple exciton generation effect solar cells, hot carrier solar cells, one dimensional material constructed asymmetrical schottky barrier arrays, noble nanoparticle induced plasmonic enhancement, and light trapping nanostructured semiconductor solar cells are highlighted.

Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells

KAUST Repository

Roelofs, Katherine E.; Brennan, Thomas P.; Trejo, Orlando; Xu, John; Prinz, Fritz B.; Bent, Stacey F.

2013-01-01

Lead sulfide quantum dots (QDs) were grown in situ on nanoporous TiO 2 by successive ion layer adsorption and reaction (SILAR) and by atomic layer deposition (ALD), to fabricate solid-state quantum-dot sensitized solar cells (QDSSCs). With the ultimate goal of increasing QD surface coverage, this work compares the impact of these two synthetic routes on the light absorption and electrical properties of devices. A higher current density was observed in the SILAR-grown QD devices under reverse bias, as compared to ALD-grown QD devices, attributed to injection problems of the lower-band-gap QDs present in the SILAR-grown QD device. To understand the effects of QD surface coverage on device performance, particularly interfacial recombination, electron lifetimes were measured for varying QD deposition cycles. Electron lifetimes were found to decrease with increasing SILAR cycles, indicating that the expected decrease in recombination between electrons in the TiO2 and holes in the hole-transport material, due to increased QD surface coverage, is not the dominant effect of increased deposition cycles. © 2013 IEEE.

Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells

KAUST Repository

Roelofs, Katherine E.

2013-06-01

Lead sulfide quantum dots (QDs) were grown in situ on nanoporous TiO 2 by successive ion layer adsorption and reaction (SILAR) and by atomic layer deposition (ALD), to fabricate solid-state quantum-dot sensitized solar cells (QDSSCs). With the ultimate goal of increasing QD surface coverage, this work compares the impact of these two synthetic routes on the light absorption and electrical properties of devices. A higher current density was observed in the SILAR-grown QD devices under reverse bias, as compared to ALD-grown QD devices, attributed to injection problems of the lower-band-gap QDs present in the SILAR-grown QD device. To understand the effects of QD surface coverage on device performance, particularly interfacial recombination, electron lifetimes were measured for varying QD deposition cycles. Electron lifetimes were found to decrease with increasing SILAR cycles, indicating that the expected decrease in recombination between electrons in the TiO2 and holes in the hole-transport material, due to increased QD surface coverage, is not the dominant effect of increased deposition cycles. © 2013 IEEE.

Challenges in amorphous silicon solar cell technology

NARCIS (Netherlands)

Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

2000-01-01

Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

High-temperature fabrication of Ag(In,Ga)Se{sub 2} thin films for applications in solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xianfeng [International Center for Science and Engineering Programs, Waseda University, Tokyo (Japan); Yamada, Akira [Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kagami Memorial Research Institute for Materials Science, Waseda University, Tokyo (Japan)

2017-10-15

Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se{sub 2} (AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabricate AIGS films. The as-grown AIGS thin films were then used to make AIGS solar cells. We found that grain size and crystallinity of AIGS films were considerably improved by increasing the deposition and annealing temperature. For high-temperature deposition, temperatures over 600 C led to decomposition of the AIGS film, desorption of In, and deterioration of its crystallinity. The most appropriate deposition temperature was 590 C and a solar cell with a power conversion efficiency of 4.1% was obtained. High-temperature annealing of the AIGS thin films showed improved crystallinity as annealing temperature was increased and film decomposition and In desorption were prevented. A solar cell based on this film showed the highest conversion efficiency of 6.4% when annealed at 600 C. When the annealing temperature was further increased to 610 C, the performance of the cell deteriorated due to loss of the out-of-plane Ga gradient. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Commercial Development Of Ovonic Thin Film Solar Cells

Science.gov (United States)

Ovshinsky, Stanford R.

1983-09-01

One square foot Ovonic amorphous photovoltaic devices are already in commercial production and are manufactured through a continuous web process. The next levels of commercialization required to achieve a large-volume power market will be discussed, and the device specifications correlated with the chemical and electronic properties of the materials that we are developing to achieve even higher efficiencies. It has been long considered a utopian dream to harness the energy of the sun to create electricity that would be competitive in cost to that produced from the conventional sources of energy such as oil, gas, and uranium. The impact on our society of stand-alone power generators without moving parts using the continually available, ubiquitous energy of the sun could certainly lead to a new age with consequences comparable to the first introduction of electricity which greatly accelerated the Industrial Revolution. Low cost, nonpolluting energy not dependent upon or limited by transmission costs could again make DC electricity a realistic option. The relatively young field of photovoltaics suffers from certain dogmas that are just now being questioned. For example, it is thought by many that solar cells utilizing crys-talline materials have inherently higher efficiencies than those using amorphous materials, and that somehow crystalline solar cells, whether fabricated from single crystals or polycrystalline material, in round or rectangular geometries, grown from the melt or by a rib-bon process, can be reduced in cost sufficiently that the economics become attractive enough for large-scale terrestrial generation of power. In this paper, we shall show that amorphous materials can have much higher efficiencies than do crystalline and that the answer to our power generation needs lies not in crystalline but in amorphous technology. At Energy Conversion Devices, Inc. (ECD), we have designed and built a production machine (described by my colleague, Dr. Izu, in a

Surface Passivation for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Deligiannis, D.

2017-01-01

Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

Influence of base pressure and atmospheric contaminants on a-Si:H solar cell properties

International Nuclear Information System (INIS)

Woerdenweber, J.; Schmitz, R.; Mueck, A.; Zastrow, U.; Niessen, L.; Gordijn, A.; Carius, R.; Beyer, W.; Rau, U.; Merdzhanova, T.; Stiebig, H.

2008-01-01

The influence of atmospheric contaminants oxygen and nitrogen on the performance of thin-film hydrogenated amorphous silicon (a-Si:H) solar cells grown by plasma-enhanced chemical vapor deposition at 13.56 MHz was systematically investigated. The question is addressed as to what degree of high base pressures (up to 10 -4 Torr) are compatible with the preparation of good quality amorphous silicon based solar cells. The data show that for the intrinsic a-Si:H absorber layer exists critical oxygen and nitrogen contamination levels (about 2x10 19 atoms/cm 3 and 4x10 18 atoms/cm 3 , respectively). These levels define the minimum impurity concentration that causes a deterioration in solar cell performance. This critical concentration is found to depend little on the applied deposition regime. By enhancing, for example, the flow of process gases, a higher base pressure (and leak rate) can be tolerated before reaching the critical contamination level. The electrical properties of the corresponding films show that increasing oxygen and nitrogen contamination results in an increase in dark conductivity and photoconductivity, while activation energy and photosensitivity are decreased. These effects are attributed to nitrogen and oxygen induced donor states, which cause a shift of the Fermi level toward the conduction band and presumably deteriorate the built-in electric field in the solar cells. Higher doping efficiencies are observed for nitrogen compared to oxygen. Alloying effects (formation of SiO x ) are observed for oxygen contaminations above 10 20 atoms/cm 3 , leading to an increase in the band gap

Assessment of the dye-sensitized solar cell

Energy Technology Data Exchange (ETDEWEB)

McConnell, R. D. [Center for Basic Sciences, National Renewable Energy Laboratory, MIS 3211, 1617 Cole Boulevard, Golden, CO 80401 (United States)

2002-09-01

The field of solar electricity, or photovoltaics (PV), is rich in that there are many materials and concepts for converting sunlight into electricity. The technologies accepted as conventional are those well along in the process of commercialization. The dye-sensitized solar cell, developed in the 1990s, is a nonconventional solar electric technology that has attracted much attention, perhaps a result of its record cell efficiency above 10%. This paper reviews the technology, discusses new research results and approaches presented at a recent symposium of many of the world's important dye solar cell researchers, and presents an assessment of the dye-sensitized solar cell in a comparison with current conventional solar electric technologies. It concludes the dye solar cell has potential for becoming a cost-effective means for producing electricity, capable of competing with available solar electric technologies and, eventually, with today's conventional power technologies. But it is a relatively new technology and faces many hurdles on the path to commercialization. Because of its potential, this assessment recommends further funding for research and development (RandD) of the dye-sensitized solar cell technology on the basis of the promising technical characteristics of the technology, a strong US and worldwide research base, positive industry interest, and today's relatively small funding allocation for its RandD. (Author)

Enhancement of Si solar cell efficiency using ZnO nanowires with various diameters

Science.gov (United States)

Gholizadeh, A.; Reyhani, A.; Parvin, P.; Mortazavi, S. Z.; Mehrabi, M.

2018-01-01

Here, Zinc Oxide nanowires are synthesized using thermal chemical vapor deposition of a Zn granulate source and used to enhance a significant Si-solar cell efficiency with simple and low cost method. The nanowires are grown in various O2 flow rates. Those affect the shape, yield, structure and the quality of ZnO nanowires according to scanning electron microscopy and x-ray diffraction analyses. This delineates that the ZnO nanostructure is dependent on the synthesis conditions. The photoluminescence spectroscopy of ZnO indicates optical emission at the Ultra-Violet and blue-green regions whose intensity varies as a function of diameter of ZnO nano-wires. The optical property of ZnO layer is measured by UV-visible and diffuse reflection spectroscopy that demonstrate high absorbance at 280-550 nm. Furthermore, the photovoltaic characterization of ZnO nanowires is investigated based on the drop casting on Si-solar cell. The ZnO nanowires with various diameters demonstrate different effects on the efficiency of Si-solar cells. We have shown that the reduction of the spectral reflectance and down-shifting process as well as the reduction of photon trapping are essential parameters on the efficiency of Si-solar cells. However, the latter is dominated here. In fact, the trapped photons during the electron-hole generation are dominant due to lessening the absorption rate in ZnO nano-wires. The results indicate that the mean diameters reduction of ZnO nanowires is also essential to improve the fill factor. The external and internal quantum efficiency analyses attest the efficiency improvement over the blue region which is related to the key parameters above.

Highly efficient light management for perovskite solar cells.

Science.gov (United States)

Wang, Dong-Lin; Cui, Hui-Juan; Hou, Guo-Jiao; Zhu, Zhen-Gang; Yan, Qing-Bo; Su, Gang

2016-01-06

Organic-inorganic halide perovskite solar cells have enormous potential to impact the existing photovoltaic industry. As realizing a higher conversion efficiency of the solar cell is still the most crucial task, a great number of schemes were proposed to minimize the carrier loss by optimizing the electrical properties of the perovskite solar cells. Here, we focus on another significant aspect that is to minimize the light loss by optimizing the light management to gain a high efficiency for perovskite solar cells. In our scheme, the slotted and inverted prism structured SiO2 layers are adopted to trap more light into the solar cells, and a better transparent conducting oxide layer is employed to reduce the parasitic absorption. For such an implementation, the efficiency and the serviceable angle of the perovskite solar cell can be promoted impressively. This proposal would shed new light on developing the high-performance perovskite solar cells.

CIGS thin film solar cell prepared by reactive co-sputtering

Science.gov (United States)

Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

2013-09-01

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

Enhancing Solar Cell Efficiency Using Photon Upconversion Materials.

Science.gov (United States)

Shang, Yunfei; Hao, Shuwei; Yang, Chunhui; Chen, Guanying

2015-10-27

Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous), gallium arsenide (GaAs) solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed.

Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

Directory of Open Access Journals (Sweden)

Yunfei Shang

2015-10-01

Full Text Available Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous, gallium arsenide (GaAs solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed

Nanoparticle Solar Cell Final Technical Report

Energy Technology Data Exchange (ETDEWEB)

Breeze, Alison, J; Sahoo, Yudhisthira; Reddy, Damoder; Sholin, Veronica; Carter, Sue

2008-06-17

The purpose of this work was to demonstrate all-inorganic nanoparticle-based solar cells with photovoltaic performance extending into the near-IR region of the solar spectrum as a pathway towards improving power conversion efficiencies. The field of all-inorganic nanoparticle-based solar cells is very new, with only one literature publication in the prior to our project. Very little is understood regarding how these devices function. Inorganic solar cells with IR performance have previously been fabricated using traditional methods such as physical vapor deposition and sputtering, and solution-processed devices utilizing IR-absorbing organic polymers have been investigated. The solution-based deposition of nanoparticles offers the potential of a low-cost manufacturing process combined with the ability to tune the chemical synthesis and material properties to control the device properties. This work, in collaboration with the Sue Carter research group at the University of California, Santa Cruz, has greatly expanded the knowledge base in this field, exploring multiple material systems and several key areas of device physics including temperature, bandgap and electrode device behavior dependence, material morphological behavior, and the role of buffer layers. One publication has been accepted to Solar Energy Materials and Solar Cells pending minor revision and another two papers are being written now. While device performance in the near-IR did not reach the level anticipated at the beginning of this grant, we did observe one of the highest near-IR efficiencies for a nanoparticle-based solar cell device to date. We also identified several key parameters of importance for improving both near-IR performance and nanoparticle solar cells in general, and demonstrated multiple pathways which showed promise for future commercialization with further research.

Polymer tandem solar cells

NARCIS (Netherlands)

Gilot, J.

2010-01-01

Solar cells convert solar energy directly into electricity and are attractive contribute to the increasing energy demand of modern society. Commercial mono-crystalline silicon based devices are infiltrating the energy market but their expensive, time and energy consuming production process

Investigation of solar cell radiation damage

International Nuclear Information System (INIS)

Bernard, J.; Reulet, R.; Arndt, R.A.

1974-01-01

Development of communications satellites has led to the requirement for a greater and longer lived solar cell power source. Accordingly, studies have been undertaken with the aim of determining which solar cell array provides the greatest power at end of life and the amount of degradation. Investigation of the damage done to thin silicon and thin film CdS solar cells is being carried out in two steps. First, irradiations were performed singly with 0.15, 1.0 and 2.0MeV electrons and 0.7, 2.5 and 22MeV proton. Solar cells and their cover materials were irradiated separately in order to locate the sites of the damage. Diffusion length and I.V. characteristics of the cells and transmission properties of the cover materials were measured. All neasurements were made in vacuum immediately after irradiation. In the second part it is intended to study the effect of various combinations of proton, electron and photon irradiation both with and without an electrical load. The results of this part show whether synergism is involved in solar cell damage and the relative importance of each of three radiation sources if synergism is found [fr

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Continuous wet-process growth of ZnO nanoarrays for wire-shaped photoanode of dye-sensitized solar cell.

Science.gov (United States)

Tao, Pan; Guo, Wanwan; Du, Jun; Tao, Changyuan; Qing, Shenglan; Fan, Xing

2016-09-15

Well-aligned ZnO nanorod arrays have been grown on metal-plated polymer fiber via a mild wet process in a newly-designed continuous reactor, aiming to provide wire-shaped photoanodes for wearable dye-sensitized solar cells. The growth conditions were systematically optimized with the help of computational flow-field simulation. The flow field in the reactor will not only affect the morphology of the ZnO nanorod⧹nanowire but also affect the pattern distribution of nanoarray on the electrode surface. Unlike the sectional structure from the traditional batch-type reactor, ZnO nanorods with finely-controlled length and uniform morphology could be grown from the continuous reactor. After optimization, the wire-shaped ZnO-type photoanode grown from the continuous reactor exhibited better photovoltaic performance than that from the traditional batch-type reactor. Copyright © 2016 Elsevier Inc. All rights reserved.

High-efficient solar cells with porous silicon

International Nuclear Information System (INIS)

Migunova, A.A.

2002-01-01

It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte, Kevin L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); France, Ryan M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); McMahon, William E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Perl, Emmett [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Friedman, Daniel J [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2017-09-06

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Solar Cell Production in Nigeria: Prospects, Options and Problems

International Nuclear Information System (INIS)

Fasasi, A. Y.; Siyanbola, W.O.; Ibitoye, F. I.; Pelemo, D. A.

2002-01-01

The prospects and problems facing solar cell production in Nigeria are discussed. The paper reviews many proven solar cell materials in terms of their current efficiencies and production costs. Silicon solar cell production appears to be the best technology option for Nigeria because of the abundant quartz sand and waste products from our phosphate fertiliser company that can be employed as starting materials to produce solar grade silicon. Factors affecting solar cell efficiency, choice of solar cell as well as financial and material problems limiting the progress on silicon solar cell production are also discussed. Finally, the paper recommends the simultaneous production of solar grade silicon and coordinated development of the balance of system components as first steps towards actualizing this objective

Single-Walled Carbon Nanotubes in Solar Cells.

Science.gov (United States)

Jeon, Il; Matsuo, Yutaka; Maruyama, Shigeo

2018-01-22

Photovoltaics, more generally known as solar cells, are made from semiconducting materials that convert light into electricity. Solar cells have received much attention in recent years due to their promise as clean and efficient light-harvesting devices. Single-walled carbon nanotubes (SWNTs) could play a crucial role in these devices and have been the subject of much research, which continues to this day. SWNTs are known to outperform multi-walled carbon nanotubes (MWNTs) at low densities, because of the difference in their optical transmittance for the same current density, which is the most important parameter in comparing SWNTs and MWNTs. SWNT films show semiconducting features, which make SWNTs function as active or charge-transporting materials. This chapter, consisting of two sections, focuses on the use of SWNTs in solar cells. In the first section, we discuss SWNTs as a light harvester and charge transporter in the photoactive layer, which are reviewed chronologically to show the history of the research progress. In the second section, we discuss SWNTs as a transparent conductive layer outside of the photoactive layer, which is relatively more actively researched. This section introduces SWNT applications in silicon solar cells, organic solar cells, and perovskite solar cells each, from their prototypes to recent results. As we go along, the science and prospects of the application of solar cells will be discussed.

Scaling Up ITO-free solar cells

DEFF Research Database (Denmark)

Galagan, Yulia; Coenen, Erica W. C.; Zimmermann, Birger

2014-01-01

Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm...... resistances. The performance of ITO-free organic solar cells with different dimensions and different electrode resistances are evaluated for different light intensities. The current generation and electric potential distribution are found to not be uniformly distributed in large-area devices at simulated 1...

Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Sodabanlu, Hassanet, E-mail: sodabanlu@hotaka.t.u-tokyo.ac.jp; Wang, Yunpeng; Watanabe, Kentaroh [Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan); Sugiyama, Masakazu [Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Nakano, Yoshiaki [Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan); Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

2014-06-21

The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well (MQW) solar cells on various mis-orientated GaAs substrates were studied using metalorganic vapor phase epitaxy. Thickness modulation effect caused by mismatch strain of InGaAs/GaAsP could be suppressed by low growth temperature. Consequently, abrupt MQWs with strong light absorption could be deposited on mis-oriented substrates. However, degradation in crystal quality and impurity incorporation are the main drawbacks with low temperature growth because they tend to strongly degraded carrier transport and collection efficiency. MQW solar cells grown at optimized temperature showed the better conversion efficiency. The further investigation should focus on improvement of crystal quality and background impurities.

Highly efficient perovskite solar cells based on a nanostructured WO3-TiO2 core-shell electron transporting material

KAUST Repository

Mahmood, Khalid; Swain, Bhabani Sankar; Kirmani, Ahmad R.; Amassian, Aram

2015-01-01

Until recently, only mesoporous TiO2 and ZnO were successfully demonstrated as electron transport layers (ETL) alongside the reports of ZrO2 and Al2O3 as scaffold materials in organometal halide perovskite solar cells, largely owing to ease of processing and to high power conversion efficiency. In this article, we explore tungsten trioxide (WO3)-based nanostructured and porous ETL materials directly grown hydrothermally with different morphologies such as nanoparticles, nanorods and nanosheet arrays. The nanostructure morphology strongly influences the photocurrent and efficiency in organometal halide perovskite solar cells. We find that the perovskite solar cells based on WO3 nanosheet arrays yield significantly enhanced photovoltaic performance as compared to nanoparticles and nanorod arrays due to good perovskite absorber infiltration in the porous scaffold and more rapid carrier transport. We further demonstrate that treating the WO3 nanostructures with an aqueous solution of TiCl4 reduces charge recombination at the perovskite/WO3 interface, resulting in the highest power conversion efficiency of 11.24% for devices based on WO3 nanosheet arrays. The successful demonstration of alternative ETL materials and nanostructures based on WO3 will open up new opportunities in the development of highly efficient perovskite solar cells. This journal is © The Royal Society of Chemistry 2015.

High-efficiency concentrator silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

Solar Cell and Array Technology Development for NASA Solar Electric Propulsion Missions

Science.gov (United States)

Piszczor, Michael; McNatt, Jeremiah; Mercer, Carolyn; Kerslake, Tom; Pappa, Richard

2012-01-01

NASA is currently developing advanced solar cell and solar array technologies to support future exploration activities. These advanced photovoltaic technology development efforts are needed to enable very large (multi-hundred kilowatt) power systems that must be compatible with solar electric propulsion (SEP) missions. The technology being developed must address a wide variety of requirements and cover the necessary advances in solar cell, blanket integration, and large solar array structures that are needed for this class of missions. Th is paper will summarize NASA's plans for high power SEP missions, initi al mission studies and power system requirements, plans for advanced photovoltaic technology development, and the status of specific cell and array technology development and testing that have already been conducted.

Organic Based Solar Cells with Morphology Control

DEFF Research Database (Denmark)

Andersen, Thomas Rieks

The field of organic solar cells has in the last years gone through an impressive development with efficiencies reported up to 12 %. For organic solar cells to take the leap from primarily being a laboratory scale technology to being utilized as renewable energy source, several issues need...... Microscopy and as solar cells in a blend with PCBM. It was concluded that these particles did not show a potential large enough for continuous work due to a high material loss and low efficiency when applied in solar cells. The second method to achieve was preparation of pre-arranged morphology organic...... nanoparticles consisting of a blend of donor and acceptor in an aqueous dispersion, thereby addressing two of the issues remaining in the field of organic solar cells. This approach was used on six different polymers, which all had the ability to prepare aqueous nanoparticle inks. The morphology...

Solar Cell Panel and the Method for Manufacturing the Same

Science.gov (United States)

Richards, Benjamin C. (Inventor); Sarver, Charles F. (Inventor); Naidenkova, Maria (Inventor)

2016-01-01

According to an aspect of an embodiment of the present disclosure, there is provided a solar cell panel and a method for manufacturing the same. The solar cell panel comprises: a solar cell for generating electric power from sunlight; a coverglass for covering the solar cell; transparent shims, which are disposed between the solar cell and the coverglass at the points where the distance between the solar cell and the coverglass needs to be controlled, and form a space between the solar cell and the coverglass; and adhesive layer, which fills the space between the solar cell and the coverglass and has the thickness the same as that of the transparent shims.

Annealing Effect on Photovoltaic Performance of CdSe Quantum-Dots-Sensitized TiO2 Nanorod Solar Cells

Directory of Open Access Journals (Sweden)

Yitan Li

2012-01-01

Full Text Available Large area rutile TiO2 nanorod arrays were grown on F:SnO2 (FTO conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs were deposited onto single-crystalline TiO2 nanorod arrays by a chemical bath deposition (CBD method to make a photoelectrode. The solar cell was assembled using a CdSe-TiO2 nanostructure as the photoanode and polysulfide solution as the electrolyte. The annealing effect on optical and photovoltaic properties of CdSe quantum-dots-sensitized TiO2 nanorod solar cells was studied systematically. A significant change of the morphology and a regular red shift of band gap of CdSe nanoparticles were observed after annealing treatment. At the same time, an improved photovoltaic performance was obtained for quantum-dots-sensitized solar cell using the annealed CdSe-TiO2 nanostructure electrode. The power conversion efficiency improved from 0.59% to 1.45% as a consequence of the annealing effect. This improvement can be explained by considering the changes in the morphology, the crystalline quality, and the optical properties caused by annealing treatment.

Perovskite Solar Cell

Indian Academy of Sciences (India)

Organic–inorganic halide perovskite, a newcomerin the solar cell industry has proved its potential forincreasing efficiency rapidly from 3.8% in 2009 to 22.1% in2016. High efficiency, flexibility, and cell architecture of theemerging hybrid halide perovskite have caught the attentionof researchers and technologists in the field.

Unconventional device concepts for polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Veenstra, S.C.; Slooff, L.H.; Verhees, W.J.H.; Cobussen-Pool, E.M.; Lenzmann, F.O.; Kroon, J.M. [ECN Solar Energy, Petten (Netherlands); Sessolo, M.; Bolink, H.J. [Instituto de Ciencia Molecular, Universidad de Valencia, Valencia (Spain)

2009-09-15

The inclusion of metal-oxide layers in polymer solar cells enables the fabrication of a series of unconventional device architectures. These devices include: semi-transparent polymer solar cells, devices with inverted polarity, as well as devices with air stable electrodes. A proof-of-principle of these devices is presented. The anticipated benefits of these novel device structures over conventional polymer solar cells are discussed.

Silicon solar cells: Past, present and the future

Science.gov (United States)

Lee, Youn-Jung; Kim, Byung-Sung; Ifitiquar, S. M.; Park, Cheolmin; Yi, Junsin

2014-08-01

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an oversupply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL — structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon — based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon — based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Silicon solar cells: past, present and the future

Energy Technology Data Exchange (ETDEWEB)

Lee, Y. J.; Kim, B. S.; Ifitiquar, S. M.; Park, C. M.; Yi, J. S. [Sungkyunkwan University, Suwon (Korea, Republic of)

2014-08-15

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an over supply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL - structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon - based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon - based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

International Nuclear Information System (INIS)

Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

2008-01-01

Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

Enhanced sensitivity to near-infrared with high fill factor in small molecular organic solar cells

Science.gov (United States)

Shim, Hyun-Sub; Kim, Hyo Jung; Kim, Ji Whan; Kim, Sei-Yong; Jeong, Won-Ik; Kim, Tae-Min; Kim, Jang-Joo

2012-09-01

High efficiency near-infrared (NIR) absorbing solar cells based on lead phthalocyanine (PbPc) are reported using copper iodide (CuI) as a templating layer to control the crystal structure of PbPc. Devices with CuI inserted between the ITO and PbPc layers exhibit a two times enhancement of the JSC compared to the case in the absence of the CuI layer. This is due to the increase of crystallinity in the molecules grown on the CuI templating layer, which is investigated via an x-ray diffraction study. Moreover, fill factor is also enhanced to 0.63 from 0.57 due to low series resistance although the additional CuI layer is inserted between the ITO and the PbPc layer. As a result, the corrected power conversion efficiency of 2.5% was obtained, which is the highest one reported up to now among the PbPc based solar cells.

Neutral- and Multi-Colored Semitransparent Perovskite Solar Cells.

Science.gov (United States)

Lee, Kyu-Tae; Guo, L Jay; Park, Hui Joon

2016-04-11

In this review, we summarize recent works on perovskite solar cells with neutral- and multi-colored semitransparency for building-integrated photovoltaics and tandem solar cells. The perovskite solar cells exploiting microstructured arrays of perovskite "islands" and transparent electrodes-the latter of which include thin metallic films, metal nanowires, carbon nanotubes, graphenes, and transparent conductive oxides for achieving optical transparency-are investigated. Moreover, the perovskite solar cells with distinctive color generation, which are enabled by engineering the band gap of the perovskite light-harvesting semiconductors with chemical management and integrating with photonic nanostructures, including microcavity, are discussed. We conclude by providing future research directions toward further performance improvements of the semitransparent perovskite solar cells.

A cost roadmap for silicon heterojunction solar cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.; Schropp, R.E.I.; Faaij, A.

2016-01-01

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

A Cost Roadmap for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

Solar cell radiation handbook. Addendum 1: 1982-1988

International Nuclear Information System (INIS)

Anspaugh, B.E.

1989-02-01

The Solar Cell Radiation Handbook (JPL Publication 82-69) is updated. In order to maintain currency of solar cell radiation data, recent solar cell designs have been acquired, irradiated with 1 MeV electrons, and measured. The results of these radiation experiments are reported

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

Science.gov (United States)

Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

1994-01-01

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

OpenAIRE

Nematollahi, Mohammadreza; Yang, Xiaodong; Aas, Lars Martin Sandvik; Ghadyani, Zahra; Kildemo, Morten; Gibson, Ursula; Reenaas, Turid Worren

2015-01-01

We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0–7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related subbandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the ...

Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

Directory of Open Access Journals (Sweden)

Chuan Lung Chuang

2015-01-01

Full Text Available Indium tin oxide (ITO thin films were grown on glass substrates by direct current (DC reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were -1.6E+20 cm−3, 2.7E+01 cm2/Vs, 1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Hydrothermal synthesis of hierarchical WO3 nanostructures for dye-sensitized solar cells

International Nuclear Information System (INIS)

Rashad, M.M.; Shalan, A.E.

2014-01-01

Hierarchical architectures consisting of one-dimensional (1D) nanostructures are of great interest for potential use in energy and environmental applications in recent years. In this work, hierarchical tungsten oxide (WO 3 ) has been synthesized via a facile hydrothermal route from ammonium metatungstate hydrate and implemented as photoelectrode for dye-sensitized solar cells. The urchin-like WO 3 micro-patterns are constructed by self-organized nanoscale length 1D building blocks, which are single crystalline in nature, grown along (001) direction and confirm an orthorhombic crystal phase. The obtained powders were investigated by XRD, SEM, TEM and UV-Vis Spectroscopy. The photovoltaic performance of dye-sensitized solar cells based on WO 3 photoanodes was investigated. With increasing the calcination temperature of the prepared nanopowders, the light-electricity conversion efficiency (η) was increased. The results were attributed to increase the crystallinity of the particles and ease of electron movement. The DSSC based on hierarchical WO 3 showed a short-circuit current, an open-circuit voltage, a fill factor, and a conversion efficiency of 4.241 mA/cm 2 , 0.656 V, 66.74, and 1.85 %, respectively. (orig.)

Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer.

Science.gov (United States)

Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei

2015-10-07

Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.

Solar cell power source system

Energy Technology Data Exchange (ETDEWEB)

Shimizu, Yoichi; Toma, Kunio; Fukuwa, Shinji

1988-05-14

This invention aims to supply a power source system with stable power output by reducing the power loss due to switching in the voltage stabilization even when the power source is a solar cell with frequent voltage variation. For this purpose, in a solar cell power source system consisting of a solar cell, a storage battery, a switching regulator placed between the storage cell and the load, and a load, arrangement was made that, by judging the input voltage from the storage battery, switch-acting the transistor of the switching regulator, if the input voltage is higher than the specified voltage; is the input voltage is lower than the specified voltage, the transistor is put in a full-on state. By this, the supply voltage can be stabilized even when the voltage fluctuates, and system gets more efficient as the switching loss decreases in the voltage stabilizing means. (1 fig)

Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells.

Science.gov (United States)

Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

2015-09-23

Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

Science.gov (United States)

Chuang, Chen

Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

Improvement of organic solar cells by flexible substrate and ITO surface treatments

International Nuclear Information System (INIS)

Cheng, Yuang-Tung; Ho, Jyh-Jier; Wang, Chien-Kun; Lee, William; Lu, Chih-Chiang; Yau, Bao-Shun; Nain, Jhen-Liang; Chang, Shun-Hsyung; Chang, Chiu-Cheng; Wang, Kang L.

2010-01-01

In this paper, surface treatments on polyethylene terephthalate with polymeric hard coating (PET-HC) substrates are described. The effect of the contact angle on the treatment is first investigated. It has been observed that detergent is quite effective in removing organic contamination on the flexible PET-HC substrates. Next, using a DC-reactive magnetron sputter, indium tin oxide (ITO) thin films of 90 nm are grown on a substrate treated by detergent. Then, various ITO surface treatments are made for improving the performance of the finally developed organic solar cells with structure Al/P3HT:PCBM/PEDOT:PSS/ITO/PET. It is found that the parameters of the ITO including resistivity, carrier concentration, transmittance, surface morphology, and work function depended on the surface treatments and significantly influence the solar cell performance. With the optimal conditions for detergent treatment on flexible PET substrates, the ITO film with a resistivity of 5.6 x 10 -4 Ω cm and average optical transmittance of 84.1% in the visible region are obtained. The optimal ITO surface treated by detergent for 5 min and then by UV ozone for 20 min exhibits the best WF value of 5.22 eV. This improves about 8.30% in the WF compared with that of the untreated ITO film. In the case of optimal treatment with the organic photovoltaic device, meanwhile, 36.6% enhancement in short circuit current density (J sc ) and 92.7% enhancement in conversion efficiency (η) over the untreated solar cell are obtained.

Silicon Solar Cell Turns 50

Energy Technology Data Exchange (ETDEWEB)

Perlin, J.

2004-08-01

This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

Scaling up ITO-Free solar cells

NARCIS (Netherlands)

Galagan, Y.O.; Coenen, E.W.C.; Zimmermann, B.; Slooff, L.H.; Verhees, W.J.H.; Veenstra, S.C.; Kroon, J.M.; Jørgensen, M.; Krebs, F.C.; Andriessen, H.A.J.M.

2014-01-01

Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm and

Dye-sensitised solar cell (artificial photosynthesis)

CSIR Research Space (South Africa)

Le Roux, Lukas J

2005-07-01

Full Text Available A novel system that harnesses solar energy is the nano-crystalline TiO dye-sensitised solar cell (DSC), in conjunction with several new concepts, such as nanotechnology and molecular devices. An efficient and low-cost cell can be produced by using...

Comparative study about Al-doped zinc oxide thin films deposited by Pulsed Electron Deposition and Radio Frequency Magnetron Sputtering as Transparent Conductive Oxide for Cu(In,Ga)Se{sub 2}-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Pattini, F., E-mail: pattini@imem.cnr.it [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Annoni, F.; Bissoli, F.; Bronzoni, M. [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Garcia, J.P. [Delft University of Technology, Faculty of Applied Sciences, Delft Product and Process Design Institute, Julianalaan 67, 2628 BC Delft (Netherlands); Gilioli, E.; Rampino, S. [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy)

2015-05-01

In this study, a comparison between Al-doped ZnO (AZO) as Transparent Conductive Oxide for Cu(In,Ga)Se{sub 2}-based solar cells grown by Pulsed Electron Deposition (PED) and Radio Frequency Magnetron Sputtering (RFMS) was performed. PED yielded polycrystalline [002] mono-oriented thin films with low electrical resistivity and high optical transparency with heater temperatures ranging from room temperature (RT) to 250 °C. The electrical resistivity of these films can be tuned by varying the heater temperature, reaching a minimum value of 3.5 × 10{sup −4} Ωcm at 150 °C and an average transmittance over 90% in the visible range. An AZO film grown at RT was deposited by PED on an actual Cu(In,Ga)Se{sub 2}-based solar cell, resulting to an efficiency value of 15.2% on the best device. This result clearly shows that PED is a suitable technique for growing ZnO-based thin films for devices/applications where low deposition temperature is required. On the other hand, an optimized AZO thin film front contact for thin film solar cells was studied and fabricated via RFMS. The parameters of this technique were tweaked to obtain highly conductive and transparent AZO thin films. The lowest resistivity value of 3.7 × 10{sup −4} Ωcm and an average transmittance of 86% in the 400-1100 nm wavelength range was obtained with a heater temperature of 250 °C. A thick sputtered AZO film was deposited at RT onto an identical cell used for PED-grown AZO, reaching the highest conversion efficiency value of 14.7%. In both cases, neither antireflection coatings nor pure ZnO layer was used. - Highlights: • Pulsed Electron Deposition (PED) lets high quality films grow at low temperature. • Al:ZnO (AZO) thin films grown by PED present high optical and electrical quality. • AZO electrical resistivity can be tuned from 10{sup −4} to 10{sup −2} Ωcm in proper condition. • Cu(In,Ga)Se{sub 2}-based simplified solar cells achieved efficiency of 15.2% for PED-grown AZO.

Doctor Blade-Coated Polymer Solar Cells

KAUST Repository

Cho, Nam Chul

2016-10-25

In this work, we report polymer solar cells based on blade-coated P3HT:PC71BM and PBDTTT-EFT:PC71BM bulk heterojunction photoactive layers. Enhanced power conversion efficiency of 2.75 (conventional structure) and 3.03% (inverted structure) with improved reproducibility was obtained from blade-coated P3HT:PC71BM solar cells, compared to spin-coated ones. Furthermore, by demonstrating 3.10% efficiency flexible solar cells using blade-coated PBDTTT-EFT:PC71BM films on the plastic substrates, we suggest the potential applicability of blade coating technique to the high throughput roll-to-roll fabrication systems.

Workshop - Solar cells and daylight. Solar cell house. House building with integrated solar cell systems; Workshop - Solceller og dagslys. Solcellehus. Boligbyggeri med integrerede solcelleanlaeg

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Mio; Hansen, Ellen Kathrine

2005-04-15

The workshop 'Solar cells and daylight' at Aarhus School of Architecture aimed at studying and developing architectural potentials of integrating solar cell systems in building components for future house building. The aim of the process was to stress that technical conditions such as energy technological component design might work as central points of support in the future shaping and organisation of qualitative and functional design of houses. (BA)

Light-trapping in perovskite solar cells

Directory of Open Access Journals (Sweden)

Qing Guo Du

2016-06-01

Full Text Available We numerically demonstrate enhanced light harvesting efficiency in both CH3NH3PbI3 and CH(NH22PbI3-based perovskite solar cells using inverted vertical-cone photonic-crystal nanostructures. For CH3NH3PbI3 perovskite solar cells, the maximum achievable photocurrent density (MAPD reaches 25.1 mA/cm2, corresponding to 92% of the total available photocurrent in the absorption range of 300 nm to 800 nm. Our cell shows 6% absorption enhancement compared to the Lambertian limit (23.7 mA/cm2 and has a projected power conversion efficiency of 12.9%. Excellent solar absorption is numerically demonstrated over a broad angular range from 0 to 60 degree for both S- and P- polarizations. For the corresponding CH(NH22PbI3 based perovskite solar cell, with absorption range of 300 nm to 850 nm, we find a MAPD of 29.1 mA/cm2, corresponding to 95.4% of the total available photocurrent. The projected power conversion efficiency of the CH(NH22PbI3 based photonic crystal solar cell is 23.4%, well above the current world record efficiency of 20.1%.

Recent progress in Si thin film technology for solar cells

Science.gov (United States)

Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

1991-11-01

Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

Advanced Solar Cells for Satellite Power Systems

Science.gov (United States)

Flood, Dennis J.; Weinberg, Irving

1994-01-01

The multiple natures of today's space missions with regard to operational lifetime, orbital environment, cost and size of spacecraft, to name just a few, present such a broad range of performance requirements to be met by the solar array that no single design can suffice to meet them all. The result is a demand for development of specialized solar cell types that help to optimize overall satellite performance within a specified cost range for any given space mission. Historically, space solar array performance has been optimized for a given mission by tailoring the features of silicon solar cells to account for the orbital environment and average operating conditions expected during the mission. It has become necessary to turn to entirely new photovoltaic materials and device designs to meet the requirements of future missions, both in the near and far term. This paper will outline some of the mission drivers and resulting performance requirements that must be met by advanced solar cells, and provide an overview of some of the advanced cell technologies under development to meet them. The discussion will include high efficiency, radiation hard single junction cells; monolithic and mechanically stacked multiple bandgap cells; and thin film cells.

NREL Scientists Report First Solar Cell Producing More Electrons In

Science.gov (United States)

measured in operating quantum dot solar cells at low light intensity; these cells showed significant power Photocurrent Than Solar Photons Entering Cell | News | NREL NREL Scientists Report First Solar Cell Producing More Electrons In Photocurrent Than Solar Photons Entering Cell News Release: NREL

Dye solar cells: a different approach to solar energy

CSIR Research Space (South Africa)

Le Roux, Lukas J

2008-11-01

Full Text Available An attractive and cheaper alternative to siliconbased photovoltaic (PV) cells for the conversion of solar light into electrical energy is to utilise dyeadsorbed, large-band-gap metal oxide materials such as TiO2 to absorb the solar light...

28th Solar Energy Promotion Committee Meeting - 3rd Solar Cell Liaison Meeting. Report for fiscal 1990; Dai 28 kai taiyo energy suishin iinkai dai 3 kai taiyo denchi renrakukai. 1980 nendo hokoku

Energy Technology Data Exchange (ETDEWEB)

NONE

1991-05-14

The above events took place in Tokyo in the period May 14-17, 1991, when a total of 89 essays were presented. In relation with the thin film/a-Si systems, 55 presentations were given, which were 'Novel preparation technique termed Chemical Annealing for making a-Si:H with a rigid and stable Si-network,' 'Interface characteristics of a-Si:H films prepared by VHF (very high frequency) plasma CVD (chemical vapor deposition),' 'Preparation of amorphous superlattices by continuous method and characterization of the interface,' etc. In relation with the thin film/compound systems, 8 presentations were given, which were 'Preparation of CuInSe{sub 2} solar cells by selenization method,' 'Deposition of CuInSe{sub 2} films by ICB (ionized cluster beam) technique and their optical characterization,' 'Large-area CdS/CdTe solar cells,' etc. In relation with the crystal/compound systems, 8 presentations were given, which were 'Lattice strain relaxation processes in GaAs grown on Si,' 'Optical transmission studies of tandem solar cells,' etc. In relation with the crystal/Si systems, 18 presentations were given, which were 'Effect of electric field on effective minority carrier lifetime,' 'Computer analysis of surface recombination velocity for high efficiency crystalline silicon solar cells,' etc. (NEDO)

Interfacial Properties of CZTS Thin Film Solar Cell

Directory of Open Access Journals (Sweden)

N. Muhunthan

2014-01-01

Full Text Available Cu-deficient CZTS (copper zinc tin sulfide thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

Stability and degradation mechanisms in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Ecker, Bernhard

2012-04-26

This thesis deals with stability improvements and the investigation of degradation mechanisms in organic solar cells. Organic solar cells have been in the focus of extensive academic research for over almost two decades and are currently entering the market in small scale applications. For successful large scale applications, next to the improvement of the power conversion efficiency, the stability of organic solar cells has to be increased. This thesis is dedicated to the investigation of novel materials and architectures to study stability-related issues and degradation mechanisms in order to contribute to the basic understanding of the working principles of organic solar cells. Here, impedance spectroscopy, a frequency domain technique, is used to gain information about stability and degradation mechanisms in organic solar cells. In combination with systematic variations in the preparation of solar cells, impedance spectroscopy gives the possibility to differentiate between interface and bulk dominated effects. Additionally, impedance spectroscopy gives access to the dielectric properties of the device, such as capacitance. This offers among other things the opportunity to probe the charge carrier concentration and the density of states. Another powerful way of evaluation is the combination of experimentally obtained impedance spectra with equivalent circuit modelling. The thesis presents results on novel materials and solar cell architectures for efficient hole and electron extraction. This indicates the importance of knowledge over interlayers and interfaces for improving both the efficiency and stability of organic solar cells.

Solar cell reloaded; Solarzelle reloaded

Energy Technology Data Exchange (ETDEWEB)

Iken, Joern

2013-06-06

Who comes up with something special, he may also compete with Chinese. The German-Scandinavian company Innotech Solar extends its solar module production capacity even in the midst of the crisis. Innotech Solar restores damaged cells. For this, the damaged areas are isolated and inactivated. [German] Wer sich etwas Besonderes einfallen laesst, kann auch mit chinesischer Konkurrenz bestehen. Das deutsch-skandinavische Unternehmen Innotech Solar erweitert seine Kapazitaet zur Modulherstellung sogar mitten in der Krise. Das Geschaeftsmodell der Innotech Solar sieht vor, vorgeschaedigte Solarzellen wiederherzustellen. Dafuer werden die schadhaften Stellen isoliert und stillgelegt.

The performance of silicon solar cells operated in liquids

International Nuclear Information System (INIS)

Wang Yiping; Fang Zhenlei; Zhu Li; Huang Qunwu; Zhang Yan; Zhang Zhiying

2009-01-01

Better performance can be achieved when the bare silicon solar cells are immersed into liquids for the enhanced heat removing. In this study, the performance of solar cells immersed in liquids was examined under simulated sunlight. To distinguish the effects of the liquid optic and electric properties on the solar cells, a comparison between immersion of the solar module and the bare solar cells was carried out. It was found that the optic properties of the liquids can cause minor efficiency changes on the solar cells, while the electric properties of the liquids, the molecular polarizable and ions, are responsible for the most of the changes. The bare solar cells immersed in the non-polar silicon oil have the best performance. The accelerated life tests were carried out at 150 deg. C high temperature and under 200 W/m 2 ultraviolet light irradiation, respectively. It was found that the silicon oil has good stability. This study can give support on the cooling of the concentrated photovoltaic systems by immersing the solar cells in the liquids directly

Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Pu, Nen-Wen, E-mail: nwpuccit@gmail.com [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Liang, Shih-Chang [Materials & Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan (China)

2015-11-01

Highlights: • Ti-doped indium tin oxide (ITO) films were deposited by DC magnetron sputtering. • Optimal optoelectronic properties were achieved at a sputtering power of 100 W. • Resistivity = 3.2 × 10{sup −4} Ω-cm without substrate heating or post growth annealing. • Mean visible and NIR transmittances of 83 and 80%, respectively, were achieved. • Efficient batteries (11.3%) were fabricated by applying ITO:Ti to CIGS solar cells. - Abstract: In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10{sup −4} Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se{sub 2} solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm{sup 2}, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

Fullerene surfactants and their use in polymer solar cells

Science.gov (United States)

Jen, Kwan-Yue; Yip, Hin-Lap; Li, Chang-Zhi

2015-12-15

Fullerene surfactant compounds useful as interfacial layer in polymer solar cells to enhance solar cell efficiency. Polymer solar cell including a fullerene surfactant-containing interfacial layer intermediate cathode and active layer.

Fabrication and Characterization of Dye-Sensitized Solar Cells

OpenAIRE

Mohamed FATHALLAH; Ahmed TORCHANI; Rached GHARBI

2014-01-01

Dye-sensitized solar cell (DSSC) constitutes a real revolution in the conversion of solar energy into electricity after 40 years of the invention of silicon solar cells. The working mechanism is based on a photoelectrochemical system, similar to the photosynthesis in plant leaves. The efficiencies of the DSSC are high as those obtained from amorphous silicon solar cells (10-11 %) and intensive efforts are done in different directions to improve this efficiency.

Fabrication and Characterization of Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Mohamed FATHALLAH

2014-05-01

Full Text Available Dye-sensitized solar cell (DSSC constitutes a real revolution in the conversion of solar energy into electricity after 40 years of the invention of silicon solar cells. The working mechanism is based on a photoelectrochemical system, similar to the photosynthesis in plant leaves. The efficiencies of the DSSC are high as those obtained from amorphous silicon solar cells (10-11 % and intensive efforts are done in different directions to improve this efficiency.

Organic solar cells theory, experiment, and device simulation

CERN Document Server

Tress, Wolfgang

2014-01-01

This book covers in a textbook-like fashion the basics or organic solar cells, addressing the limits of photovoltaic energy conversion and giving a well-illustrated introduction to molecular electronics with focus on the working principle and characterization of organic solar cells. Further chapters based on the author's dissertation focus on the electrical processes in organic solar cells by presenting a detailed drift-diffusion approach to describe exciton separation and charge-carrier transport and extraction. The results, although elaborated on small-molecule solar cells and with focus on

Inhibition by derivatives of diguanidines of cell proliferation in Ehrlich ascites cells grown in cultures.

Science.gov (United States)

Alhonen-Hongisto, L; Pösö, H; Jänne, J

1980-01-01

The anti-proliferative effects of 1,1'-[(methylethanediylidene)dinitrilo]diguanidine [methylglyoxal bis(guanylhydrazone)] and 1,1'-[(metHYLETHANEDIYLIDENE)dinitrilo]bis-(3-aminoguaNIDINE) HAVE BEEN STUDIED IN Ehrlich ascites carcinoma cells grown in suspension cultures. Both compounds are potent inhibitors of S-adenosyl-L-methionine decarboxylase from the tumour cells. In the presence of putrescine (but not in its absence), the inhibition produced by 1,1'-[methylethanediylidene)dinitrilo]bis-(3-aminoguanadine) was apparently irreversible, as judged by persistent depression of the enzyme activity even after extensive dialysis. The two compounds produced similar increases in adenosylmethionine decarboxylase activity, which resulted from a striking stabilization of the enzyme in cells grown in the presence of the drugs. The inhibitory effect of the two diguanidine derivatives on the synthesis of DNA and protein became evident after an exposure of 4--8 h. At that time, the only change seen in tumour polyamines in cells grown in the presence of the inhibitors was an increase in cellular putrescine. To find out whether the compounds initially interfered with the energy production of the tumour cells, the cultures were grown in the presence of uniformly labelled glucose, and the formation of lactate, as well as the oxidation of the sugar into CO2, were measured. The activation of glycolysis upon dilution of the tumour cells with fresh medium and the subsequent formation of labelled CO2 were siliar in control cells and in cells exposed to methylglyoxal bis(buanylhydrazone), 1,1'-[(methylethanediylidene)dinitrilo]bis-(3-aminoguanidine) or diaminopropanol. Only a marginal decrease in the cellular content of ATP was found in cells exposed to the inhibitors for 24 h. The diguanidine-induced growth inhibition was fully reversed by low concentrations of exogenous polyamines. However, the possibility remained that the reversal by polyamines was due to a decrease of intracellular

All-Weather Solar Cells: A Rising Photovoltaic Revolution.

Science.gov (United States)

Tang, Qunwei

2017-06-16

Solar cells have been considered as one of the foremost solutions to energy and environmental problems because of clean, high efficiency, cost-effective, and inexhaustible features. The historical development and state-of-the-art solar cells mainly focus on elevating photoelectric conversion efficiency upon direct sunlight illumination. It is still a challenging problem to realize persistent high-efficiency power generation in rainy, foggy, haze, and dark-light conditions (night). The physical proof-of-concept for all-weather solar cells opens a door for an upcoming photovoltaic revolution. Our group has been exploring constructive routes to build all-weather solar cells so that these advanced photovoltaic technologies can be an indication for global solar industry in bringing down the cost of energy harvesting. How the all-weather solar cells are built without reducing photo performances and why such architectures can realize electricity outputs with no visible-light are discussed. Potential pathways and opportunities to enrich all-weather solar cell families are envisaged. The aspects discussed here may enable researchers to develop undiscovered abilities and to explore wide applications of advanced photovoltaics. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Assembly of CdS Quantum Dots onto Hierarchical TiO2 Structure for Quantum Dots Sensitized Solar Cell Applications

Directory of Open Access Journals (Sweden)

Syed Mansoor Ali

2015-05-01

Full Text Available Quantum dot (QD sensitized solar cells based on Hierarchical TiO2 structure (HTS consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate is fabricated. The hierarchical TiO2 structure consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate synthesized by hydrothermal route. The CdS quantum dots were grown by the successive ionic layer adsorption and reaction deposition method. The quantum dot sensitized solar cell based on the hierarchical TiO2 structure shows a current density JSC = 1.44 mA, VOC = 0.46 V, FF = 0.42 and η = 0.27%. The QD provide a high surface area and nano-urchins offer a highway for fast charge collection and multiple scattering centers within the photoelectrode.

Danish participation in the IEA solar cell activities

International Nuclear Information System (INIS)

1994-05-01

In the 12-month period 01.05.93 - 30.04.94 the Danish activities in the IEA 'Solar Cell Agreement' consisted in: participation in the Executive Committee (ExCo) and participation in Task 1 'Exchange and Dissemination of Information on PV Power Systems'. ExCo has meetings every half-year and is a coordinating organ for the Agreement. Work on the Task 1 is organized in 4 subtasks: (1) mapping of solar cell activities in the OECD countries and preparation of an IEA handbook on solar cell technology; (2) publishing of a semiannual newsletter about the agreement; (3) an 'executive conference' on solar cell technology and its uses with participation of the decision-makers in respective power industries; (4) information dissemination whenever required. Demonstration projects, like a photovoltaic roof-integrated system connected to the grid. have been implemented. Three larger solar cell projects, subsidized by the EU means, comprehend 'real time monitoring' by a solar system, WHO project 'Solar Energy Applications for Primary Health Care Clinics for Remote Rural Areas' (SAPHIR) and a grid-connected photovoltaic system in a suburb residential settlement. (EG)

Solar cell. Taiyo denchi

Energy Technology Data Exchange (ETDEWEB)

Amemiya, S.; Hashimoto, Y. (Canon Inc., Tokyo (Japan))

1991-05-17

This invention provides a cheap solar cell having a transparent surface protective layer which satisfies both controversial properties such as high electroconductivity and high water repellency and also abated the reduction of photoelectric conversion. In other words, this invention provides a solar cell having a surface-protective layer prepared by lamination of a mixture of a transparent water-repelling resin and a transparent electroconductive oxide powder; said protective layer is grounded at the surface resistance of 1 {times} 10 {sup 10} ohm or less and the contact angle of water on said protective layer is 90 degrees or more. The transparent water-repelling resin used is a fliorine resin such as PTFE and a silicone resin such as organopolysiloxane. The transparent electrodonductive oxide powder used is tin oxide, indium oxide or a complex compound of ton oxide and antimony oxide. The solar cell of this invention can be used for a long time because the adhesion of the dusts and the contamination by dirty water are restricted. 1 fig., 1 tab.

Device operation of organic tandem solar cells

NARCIS (Netherlands)

Hadipour, A.; de Boer, B.; Blom, P. W. M.

2008-01-01

A generalized methodology is developed to obtain the current-voltage characteristic of polymer tandem solar cells by knowing the electrical performance of both sub cells. We demonstrate that the electrical characteristics of polymer tandem solar cells are correctly predicted for both the series and

Development and Prospect of Nanoarchitectured Solar Cells

Directory of Open Access Journals (Sweden)

Bo Zhang

2015-01-01

Full Text Available This paper gives an overview of the development and prospect of nanotechnologies utilized in the solar cell applications. Even though it is not clearly pointed out, nanostructures indeed have been used in the fabrication of conventional solar cells for a long time. However, in those circumstances, only very limited benefits of nanostructures have been used to improve cell performance. During the last decade, the development of the photovoltaic device theory and nanofabrication technology enables studies of more complex nanostructured solar cells with higher conversion efficiency and lower production cost. The fundamental principles and important features of these advanced solar cell designs are systematically reviewed and summarized in this paper, with a focus on the function and role of nanostructures and the key factors affecting device performance. Among various nanostructures, special attention is given to those relying on quantum effect.

Recent Advances in Dye Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Umer Mehmood

2014-01-01

Full Text Available Solar energy is an abundant and accessible source of renewable energy available on earth, and many types of photovoltaic (PV devices like organic, inorganic, and hybrid cells have been developed to harness the energy. PV cells directly convert solar radiation into electricity without affecting the environment. Although silicon based solar cells (inorganic cells are widely used because of their high efficiency, they are rigid and manufacturing costs are high. Researchers have focused on organic solar cells to overcome these disadvantages. DSSCs comprise a sensitized semiconductor (photoelectrode and a catalytic electrode (counter electrode with an electrolyte sandwiched between them and their efficiency depends on many factors. The maximum electrical conversion efficiency of DSSCs attained so far is 11.1%, which is still low for commercial applications. This review examines the working principle, factors affecting the efficiency, and key challenges facing DSSCs.

Growth and characterization of low composition Ge, x in epi-Si1‑x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

Science.gov (United States)

Ajmal Khan, M.; Sato, R.; Sawano, K.; Sichanugrist, P.; Lukianov, A.; Ishikawa, Y.

2018-05-01

Semiconducting epi-Si1‑x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1‑x Ge x , makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1‑x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm‑2 to 15.46 mA cm‑2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.

Silicon nanostructures for third generation photovoltaic solar cells

International Nuclear Information System (INIS)

Conibeer, Gavin; Green, Martin; Corkish, Richard; Cho, Young; Cho, Eun-Chel; Jiang, Chu-Wei; Fangsuwannarak, Thipwan; Pink, Edwin; Huang, Yidan; Puzzer, Tom; Trupke, Thorsten; Richards, Bryce; Shalav, Avi; Lin, Kuo-lung

2006-01-01

The concept of third generation photovoltaics is to significantly increase device efficiencies whilst still using thin film processes and abundant non-toxic materials. This can be achieved by circumventing the Shockley-Queisser limit for single band gap devices, using multiple energy threshold approaches. At University of NSW, as part of our work on Third Generation devices, we are using the energy confinement of silicon based quantum dot nanostructures to engineer wide band gap materials to be used as upper cell elements in Si based tandem cells. HRTEM data shows Si nanocrystal formation in oxide and nitride matrixes with a controlled nanocrystal size, grown by layered reactive sputtering and layered PECVD. Photoluminescence evidence for quantum confinement in the Si quantum dots in oxide agrees with the calculated increase in PL energy with reduction in dot size. Resistivity measurements with temperature give tentative proof of conduction and we are investigating junction formation in these materials. We are also using similar Si quantum dot structures in double barrier resonant tunneling structures for use in hot carrier solar cell contacts. These must collect carriers over a limited energy range. Negative differential resistance has been observed in room temperature I-V on these samples, a necessary proof of concept for selective energy filter contacts

Candidate solar cell materials for photovoltaic conversion in a solar power satellite /SPS/

Science.gov (United States)

Glaser, P. E.; Almgren, D. W.

1978-01-01

In recognition of the obstacles to solar-generated baseload power on earth, proposals have been made to locate solar power satellites in geosynchronous earth orbit (GEO), where solar energy would be available 24 hours a day during most of the time of the year. In an SPS, the electricity produced by solar energy conversion will be fed to microwave generators forming part of a planar phase-array transmitting antenna. The antenna is designed to precisely direct a microwave beam of very low intensity to one or more receiving antennas at desired locations on earth. At the receiving antenna, the microwave energy will be safely and efficiently reconverted to electricity and then be transmitted to consumers. An SPS system will include a number of satellites in GEO. Attention is given to the photovoltaic option for solar energy conversion in GEO, solar cell requirements, the availability of materials, the implication of large production volumes, requirements for high-volume manufacture of solar cell arrays, and the effects of concentration ratio on solar cell array area.

METHOD AND APPARATUS FOR CHARACTERIZATION OF A SOLAR CELL

DEFF Research Database (Denmark)

2017-01-01

; and estimating variations in the solar cell, thereby electrically characterizing the solar cell. The disclosure further relates to a solar cell characterization apparatus for characterization of a solar cell, comprising: a light source for generating an optical probe light; a modulation unit, configured...... to produce modulated probe light by modulating the optical probe light with a modulation frequency of between 100 kHz and 0 MHz; a light scanning unit for scanning the modulated probe light such that said modulated probe light is incident on at least a part of the surface of the solar cell; and a 1 signal...

Recyclable organic solar cells on cellulose nanocrystal substrates.

Science.gov (United States)

Zhou, Yinhua; Fuentes-Hernandez, Canek; Khan, Talha M; Liu, Jen-Chieh; Hsu, James; Shim, Jae Won; Dindar, Amir; Youngblood, Jeffrey P; Moon, Robert J; Kippelen, Bernard

2013-01-01

Solar energy is potentially the largest source of renewable energy at our disposal, but significant advances are required to make photovoltaic technologies economically viable and, from a life-cycle perspective, environmentally friendly, and consequently scalable. Cellulose nanomaterials are emerging high-value nanoparticles extracted from plants that are abundant, renewable, and sustainable. Here, we report on the first demonstration of efficient polymer solar cells fabricated on optically transparent cellulose nanocrystal (CNC) substrates. The solar cells fabricated on the CNC substrates display good rectification in the dark and reach a power conversion efficiency of 2.7%. In addition, we demonstrate that these solar cells can be easily separated and recycled into their major components using low-energy processes at room temperature, opening the door for a truly recyclable solar cell technology. Efficient and easily recyclable organic solar cells on CNC substrates are expected to be an attractive technology for sustainable, scalable, and environmentally-friendly energy production.

Raman scattering and structural analysis of electrodeposited CuInSe2 and S-rich quaternary CuIn(S,Se)2 semiconductors for solar cells

International Nuclear Information System (INIS)

Izquierdo-Roca, Victor; Fontane, Xavier; Morante, Joan Ramon; Saucedo, Edgardo; Ruiz, Carmen M.; Grand, Pierre-Philippe; Jaime-Ferrer, Jesus Salvador; Bermudez, Veronica; Calvo-Barrio, Lorenzo; Alvarez-Garcia, Jacobo; Perez-Rodriguez, Alejandro

2009-01-01

This work reports the Raman scattering characterisation of CuInSe 2 precursors grown by single step electrodeposition and the corresponding layers recrystallised under sulphurising conditions for solar cell devices. The analysis of the spectra measured on the as-grown precursors has allowed identifying the main secondary phases in these layers with elemental Se, Cu-Se phases and chalcopyrite Cu-poor ordered vacancy domains. To deepen in the identification of the Cu-Se phases, these measurements have been correlated with the analysis of binary Cu-Se layers. The experimental data indicate that formation of both Se and Cu-Se phases is likely controlled by the Se content in the layers. For values of stoichiometry below 1.15, excess Cu in the layers is accommodated in a phase with very low Raman efficiency (as Cu 2 Se). Increasing the content of Se leads to an increase in the spectral contribution from both Se and Cu 2-x Se, being the formation of these phases likely favoured under high excess Se conditions. The characterisation of the corresponding recrystallised layers has allowed analysing the impact of the presence of the secondary phases in the as-grown absorbers on the performance of the final solar cells. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Preface to the SPECIAL ISSUE: Excitonic Solar Cells(II)

Institute of Scientific and Technical Information of China (English)

Jianjun Tian; Meicheng Li; Kaibo Zheng

2016-01-01

Among all the excitonic solar cells(ESCs)including dyesensitized solar cells(DSSCs),quantum solar cells(QDSCs),perovskites solar cells(PSCs),and organic photovoltaics(OPVs),PSCs attracted enormous research attention in the past 7 years and attained the highest power conversion efficiency(PCE)of over 20%with the biggest progress,from 3.8%to over 22.1%in 7 years.However,one can easily realize the fact that such a rapid progress achieved in PSCs was made possible is largely based on the fundamental knowledge,experimental skills,and characterization facilities obtained and accumulated through the multi-decade long endeavor in the study of other excitonic solar cells.Even though PSCs have attractedmuch research human resource and funding,the study on other excitonic solar cells has never stopped,and such persistent efforts

Concentrated sunlight for organic solar cells

DEFF Research Database (Denmark)

Tromholt, Thomas

2010-01-01

. A high solar intensity study of inverted P3HT:PCBM solar cells is presented. Performance peak positions were found to be in the range of 1-5 suns, with smaller cells peaking at higher solar concentrations. Additionally, concentrated sunlight is demonstrated as a practical tool for accelerated stability...... were degraded resulting in acceleration factors in the range of 19-55. This shows that concentrated sunlight can be used as qualitatively to determine the lifetime of polymers under highly accelerated conditions....

Dye-sensitized solar cells and solar module using polymer electrolytes: Stability and performance investigations

Directory of Open Access Journals (Sweden)

Jilian Nei de Freitas

2006-01-01

Full Text Available We present recent results on solid-state dye-sensitized solar cell research using a polymer electrolyte based on a poly(ethylene oxide derivative. The stability and performance of the devices have been improved by a modification in the method of assembly of the cells and by the addition of plasticizers in the electrolyte. After 30 days of solar irradiation (100 mW cm-2 no changes in the cell's efficiency were observed using this new method. The effect of the active area size on cell performance and the first results obtained for the first solar module composed of 4.5 cm2 solid-state solar cells are also presented.

Vertically building Zn2SnO4 nanowire arrays on stainless steel mesh toward fabrication of large-area, flexible dye-sensitized solar cells.

Science.gov (United States)

Li, Zhengdao; Zhou, Yong; Bao, Chunxiong; Xue, Guogang; Zhang, Jiyuan; Liu, Jianguo; Yu, Tao; Zou, Zhigang

2012-06-07

Zn(2)SnO(4) nanowire arrays were for the first time grown onto a stainless steel mesh (SSM) in a binary ethylenediamine (En)/water solvent system using a solvothermal route. The morphology evolution following this reaction was carefully followed to understand the formation mechanism. The SSM-supported Zn(2)SnO(4) nanowire was utilized as a photoanode for fabrication of large-area (10 cm × 5 cm size as a typical sample), flexible dye-sensitized solar cells (DSSCs). The synthesized Zn(2)SnO(4) nanowires exhibit great bendability and flexibility, proving potential advantage over other metal oxide nanowires such as TiO(2), ZnO, and SnO(2) for application in flexible solar cells. Relative to the analogous Zn(2)SnO(4) nanoparticle-based flexible DSSCs, the nanowire geometry proves to enhance solar energy conversion efficiency through enhancement of electron transport. The bendable nature of the DSSCs without obvious degradation of efficiency and facile scale up gives the as-made flexible solar cell device potential for practical application.

Optical characterization of In{sub 2}S{sub 3} solar cell buffer layers grown by chemical bath and physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Trigo, J.F.; Asenjo, B.; Herrero, J.; Gutierrez, M.T. [Department of Energy, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

2008-09-15

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In{sub 2}S{sub 3} buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In{sub 2}S{sub 3} thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell. (author)

BM Solar Cells

KAUST Repository

Firdaus, Yuliar

2018-05-02

Fullerene‐based materials are widely used as electron acceptors in organic bulk‐heterojunction solar cells; yet, they have rarely been used as the only photoactive component due to their low absorbance and limited charge generation efficiency. However, blending the wide‐bandgap p‐type material copper (I) thiocyanate (CuSCN) with [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC70BM) leads to the formation of a unique mesostructured p‐n like heterointerface between CuSCN and PC70BM and solar cells with a power conversion efficiency (PCE) of up to 5.4%. Here, we examine in detail the reasons for the surprisingly good device performance and elucidate the charge photogeneration and recombination mechanisms in CuSCN‐based devices with PC70BM as the exclusive light‐absorbing material. Our studies clearly demonstrate that a substantial fraction of the photocurrent in the CuSCN‐based devices results from improved dissociation of fullerene excitons and efficient charge transfer at the CuSCN:PC70BM interface combined with reduced geminate and nongeminate charge recombination losses. Our results have implications beyond the fullerene‐based devices studied here, as they demonstrate that careful selection of a mesostructured p‐type transparent semiconductor paves the path to a new type of efficient single photoactive material solar cells.

BM Solar Cells

KAUST Repository

Firdaus, Yuliar; Seitkhan, Akmaral; Eisner, Flurin; Sit, Wai-Yu; Kan, Zhipeng; Wehbe, Nimer; Balawi, Ahmed H.; Yengel, Emre; Karuthedath, Safakath; Laquai, Fré dé ric; Anthopoulos, Thomas D.

2018-01-01

Fullerene‐based materials are widely used as electron acceptors in organic bulk‐heterojunction solar cells; yet, they have rarely been used as the only photoactive component due to their low absorbance and limited charge generation efficiency. However, blending the wide‐bandgap p‐type material copper (I) thiocyanate (CuSCN) with [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC70BM) leads to the formation of a unique mesostructured p‐n like heterointerface between CuSCN and PC70BM and solar cells with a power conversion efficiency (PCE) of up to 5.4%. Here, we examine in detail the reasons for the surprisingly good device performance and elucidate the charge photogeneration and recombination mechanisms in CuSCN‐based devices with PC70BM as the exclusive light‐absorbing material. Our studies clearly demonstrate that a substantial fraction of the photocurrent in the CuSCN‐based devices results from improved dissociation of fullerene excitons and efficient charge transfer at the CuSCN:PC70BM interface combined with reduced geminate and nongeminate charge recombination losses. Our results have implications beyond the fullerene‐based devices studied here, as they demonstrate that careful selection of a mesostructured p‐type transparent semiconductor paves the path to a new type of efficient single photoactive material solar cells.

Porous (001-faceted anatase TiO2 nanorice thin film for efficient dye-sensitized solar cell

Directory of Open Access Journals (Sweden)

Shah Athar Ali

2016-01-01

Full Text Available Anatase TiO2 structures with nanorice-like morphology and high exposure of (001 facet has been successfully synthesized on an ITO surface using ammonium Hexafluoro Titanate and Hexamethylenetetramine as precursor and capping agent, respectively, under a microwave-assisted liquid-phase deposition method. These anatase TiO2 nanoparticles were prepared within five minutes of reaction time by utilizing an inverter microwave system at a normal atmospheric pressure. The morphology and the size (approximately from 6 to 70 nm of these nanostructures can be controlled. Homogenous, porous, 5.64 ± 0.002 μm thick layer of spongy-nanorice with facets (101 and (001 was grown on ITO substrate and used as a photo-anode in a dye-sensitized solar cell (DSSC. This solar cell device has emerged out with 4.05 ± 0.10% power conversion efficiency (PCE and 72% of incident photon-to-current efficiency (IPCE under AM1.5 G illumination.

PSA Solar furnace: A facility for testing PV cells under concentrated solar radiation

Energy Technology Data Exchange (ETDEWEB)

Fernandez-Reche, J.; Canadas, I.; Sanchez, M.; Ballestrin, J.; Yebra, L.; Monterreal, R.; Rodriguez, J.; Garcia, G. [Concentration Solar Technologies, Plataforma Solar de Almeria-CIEMAT P.O. Box 22, Tabernas, E-04200 (Almeria) (Spain); Alonso, M.; Chenlo, F. [Photovoltaic Components and Systems, Renewable Energies Department-CIEMAT Avda. Complutense, 22, Madrid, E-28040 (Spain)

2006-09-22

The Plataforma Solar de Almeria (PSA), the largest centre for research, development and testing of concentration solar thermal technologies in Europe, has started to apply its knowledge, facilities and resources to development of the Concentration PV technology in an EU-funded project HiConPV. A facility for testing PV cells under solar radiation concentrated up to 2000x has recently been completed. The advantages of this facility are that, since it is illuminated by solar radiation, it is possible to obtain the appropriate cell spectral response directly, and the flash tests can be combined with prolonged PV-cell irradiation on large surfaces (up to 150cm{sup 2}), so the thermal response of the PV cell can be evaluated simultaneously. (author)

Development of large area, high efficiency amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

1996-02-01

The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

Light-trapping in perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Du, Qing Guo, E-mail: duqi0001@e.ntu.edu.sg [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); Institute of High Performance Computing, A* STAR, Singapore, 138632 (Singapore); Shen, Guansheng [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); John, Sajeev [Department of Physics, University of Toronto, 60 ST. George St., Toronto, Ontario, M5S 1A7 (Canada); Department of Physics, Soochow University, Suzhou (China)

2016-06-15

We numerically demonstrate enhanced light harvesting efficiency in both CH{sub 3}NH{sub 3}PbI{sub 3} and CH(NH{sub 2}){sub 2}PbI{sub 3}-based perovskite solar cells using inverted vertical-cone photonic-crystal nanostructures. For CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells, the maximum achievable photocurrent density (MAPD) reaches 25.1 mA/cm{sup 2}, corresponding to 92% of the total available photocurrent in the absorption range of 300 nm to 800 nm. Our cell shows 6% absorption enhancement compared to the Lambertian limit (23.7 mA/cm{sup 2}) and has a projected power conversion efficiency of 12.9%. Excellent solar absorption is numerically demonstrated over a broad angular range from 0 to 60 degree for both S- and P- polarizations. For the corresponding CH(NH{sub 2}){sub 2}PbI{sub 3} based perovskite solar cell, with absorption range of 300 nm to 850 nm, we find a MAPD of 29.1 mA/cm{sup 2}, corresponding to 95.4% of the total available photocurrent. The projected power conversion efficiency of the CH(NH{sub 2}){sub 2}PbI{sub 3} based photonic crystal solar cell is 23.4%, well above the current world record efficiency of 20.1%.

Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination

Energy Technology Data Exchange (ETDEWEB)

Munji, M.K., E-mail: mathew.munji@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa); Dyk, E.E. van; Vorster, F.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa)

2009-12-01

In this paper, some models that have been put forward to explain the characteristics of a photovoltaic solar cell device under solar spot-illumination are investigated. In the experimental procedure, small areas of the cell were selected and illuminated at different solar intensities. The solar cell open circuit voltage (V{sub oc}) and short circuit current (I{sub sc}) obtained at different illumination intensities was used to determine the solar cell ideality factor. By varying the illuminated area on the solar cell, changes in the ideality factor were studied. The ideality factor obtained increases with decreasing illumination surface ratio. The photo-generated current at the illuminated part of the cell is assumed to act as a dc source that injects charge carriers into the p-n junction of the whole solar cell while the dark region of the solar cell operates in a low space charge recombination regime with small diffusion currents. From this analysis, a different model of a spot illuminated cell that uses the variation of ideality factor with the illuminated area is proposed.

Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination

International Nuclear Information System (INIS)

Munji, M.K.; Dyk, E.E. van; Vorster, F.J.

2009-01-01

In this paper, some models that have been put forward to explain the characteristics of a photovoltaic solar cell device under solar spot-illumination are investigated. In the experimental procedure, small areas of the cell were selected and illuminated at different solar intensities. The solar cell open circuit voltage (V oc ) and short circuit current (I sc ) obtained at different illumination intensities was used to determine the solar cell ideality factor. By varying the illuminated area on the solar cell, changes in the ideality factor were studied. The ideality factor obtained increases with decreasing illumination surface ratio. The photo-generated current at the illuminated part of the cell is assumed to act as a dc source that injects charge carriers into the p-n junction of the whole solar cell while the dark region of the solar cell operates in a low space charge recombination regime with small diffusion currents. From this analysis, a different model of a spot illuminated cell that uses the variation of ideality factor with the illuminated area is proposed.

Questionable effects of antireflective coatings on inefficiently cooled solar cells

DEFF Research Database (Denmark)

Akhmatov, Vladislav; Galster, Georg; Larsen, Esben

1998-01-01

of the output power and efficiency curves throughout the day the coherence between technical parameters of the solar cells and the climate in the operation region is observed and examined. It is shown how the drop in output power around noon can be avoided by fitting technical parameters of the solar cells......A model for temperature effects in p-n junction solar cells is introduced. The temperature of solar cells and the losses in the solar cell junction region caused by elevating temperature are discussed. The model developed is examined for low-cost silicon solar cells. In order to improve the shape...

Integrated ZnO nanotube arrays as efficient dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Xi, Y., E-mail: yxi6@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States); Wu, W.Z.; Fang, H. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States); Hu, C.G. [Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

2012-07-15

Highlights: Black-Right-Pointing-Pointer Tuning the reaction parameters, we got the best reaction conditions on ITO glass. Black-Right-Pointing-Pointer Introduce ZnO NTs design of photoanode featuring high aspect ratio structure. Black-Right-Pointing-Pointer The design strategy integrates the optical fibers or ITO with ZnO NTs grown. - Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material and has been considered as an alternative material in dye-sensitized solar cell (DSSC) applications. A high-performance nanotube (NT) photoanode must have a large surface area for dye adsorption in order to enhance conversion efficiency. In this work, the way of hydrothermally grown ZnO NT arrays on the indium tin oxide (ITO) substrate is presented by utilizing a systematic study. By adjusting the hydrothermal reaction parameters, we attained the optimizing reaction conditions on the ITO substrate. Moreover, ZnO NT arrays are introduced as a photoanode on various substrates, such as optical fiber and ITO glass, for DSSCs applications. We took the contrast test with conversion efficiency of the DSSC based on ZnO NT arrays versus ZnO nanowire arrays on the ITO substrate, which the DSSC based on ZnO NT arrays shows significantly enhanced power conversion efficiency. Furthermore, the conversion efficiency of DSSC based on the ZnO NT arrays grown on an optical fiber substrate is enhanced up to 1.44%.

Multijunction Solar Cell Technology for Mars Surface Applications

Science.gov (United States)

Stella, Paul M.; Mardesich, Nick; Ewell, Richard C.; Mueller, Robert L.; Endicter, Scott; Aiken, Daniel; Edmondson, Kenneth; Fetze, Chris

2006-01-01

Solar cells used for Mars surface applications have been commercial space qualified AM0 optimized devices. Due to the Martian atmosphere, these cells are not optimized for the Mars surface and as a result operate at a reduced efficiency. A multi-year program, MOST (Mars Optimized Solar Cell Technology), managed by JPL and funded by NASA Code S, was initiated in 2004, to develop tools to modify commercial AM0 cells for the Mars surface solar spectrum and to fabricate Mars optimized devices for verification. This effort required defining the surface incident spectrum, developing an appropriate laboratory solar simulator measurement capability, and to develop and test commercial cells modified for the Mars surface spectrum. This paper discusses the program, including results for the initial modified cells. Simulated Mars surface measurements of MER cells and Phoenix Lander cells (2007 launch) are provided to characterize the performance loss for those missions. In addition, the performance of the MER rover solar arrays is updated to reflect their more than two (2) year operation.

Enhanced Photovoltaic Properties of Gradient Doping Solar Cells

International Nuclear Information System (INIS)

Zhang Chun-Lei; Du Hui-Jing; Zhu Jian-Zhuo; Xu Tian-Fu; Fang Xiao-Yong

2012-01-01

An optimum design of a-Si:H(n)/a-Si:H(i)/c-Si(p) heterojunction solar cell is realized with 24.27% conversion efficiency by gradient doping of the a-Si:H(n) layer. The photovoltaic properties are simulated by the AFORSHET software. Besides the additional electric field caused by the gradient doping, the enhanced and widen spectral response also improves the solar cell performance compared with the uniform-doping mode. The simulation shows that the gradient doping is efficient to improve the photovoltaic performance of the solar cells. The study is valuable for the solar cell design with excellent performances

Assessment of market possibilities for solar cells

Energy Technology Data Exchange (ETDEWEB)

Djukanovic, S. [Advanced School of Business Novi Sad (Czechoslovakia)

2004-07-01

Global heating increases profitability of solar energy application in the Balkans. The most important market segments for wider solar cells utilization in Yugoslavia (Serbia and Montenegro) are solar pumps for irrigation in agriculture, traffic lights, lighting of weekend houses, air-conditioning, telecommunications, electric vehicles, solar hydro-electric power plants, sports centers and schools and orthodox monasteries. In addition to these applications of solar modules of relatively high capacity, a wide scope of applications of mini solar modules in consumer goods is given serious consideration (flashlights, bicycle lights, fan caps, beach hats, solar parasols, toys for children, solar watches, minicomputers, walkmans and alike). In this paper is projected gradually increase of solar cells applications in Yugoslavia, from 772 kW in 2006., to 3,901 kW installed photovoltaic power in 2010. year. The largest parts of this projected 3.9 MW in 2010., ought to be solar pumps (498 kW), telecommunications (470 kW) and traffic lights (468 kW). (orig.)

Bonder for Solar-Cell Strings

Science.gov (United States)

Garwood, G.; Frasch, W.

1982-01-01

String bonder for solar-cell arrays eliminates tedious manual assembly procedure that could damage cell face. Vacuum arm picks up face-down cell from cell-inverting work station and transfers it to string conveyor without changing cell orientation. Arm is activated by signal from microprocessor.

Simple processing of high efficiency silicon solar cells

International Nuclear Information System (INIS)

Hamammu, I.M.; Ibrahim, K.

2006-01-01

Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

CERN Document Server

Verbitskaya, E; Ivanov, A; Strokan, N; Vasilev, V; Markov, A; Polyakov, A; Gavrin, V; Kozlova, Y; Veretenkin, E; Bowles, T J

2000-01-01

The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p sup + -i-n sup + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E sub v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E sub v +0....

Characteristics of dye-sensitized solar cells using natural dye

Energy Technology Data Exchange (ETDEWEB)

Furukawa, Shoji, E-mail: furukawa@cse.kyutech.ac.j [Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka-shi, Fukuoka-ken 820-8502 (Japan); Iino, Hiroshi; Iwamoto, Tomohisa; Kukita, Koudai; Yamauchi, Shoji [Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka-shi, Fukuoka-ken 820-8502 (Japan)

2009-11-30

Dye-sensitized solar cells are expected to be used for future clean energy. Recently, most of the researchers in this field use Ruthenium complex as dye in the dye-sensitized solar cells. However, Ruthenium is a rare metal, so the cost of the Ruthenium complex is very high. In this paper, various dye-sensitized solar cells have been fabricated using natural dye, such as the dye of red-cabbage, curcumin, and red-perilla. As a result, it was found that the conversion efficiency of the solar cell fabricated using the mixture of red-cabbage and curcumin was about 0.6% (light source: halogen lamp), which was larger than that of the solar cells using one kind of dye. It was also found that the conversion efficiency was about 1.0% for the solar cell with the oxide semiconductor film fabricated using polyethylene glycol (PEG) whose molecular weight was 2,000,000 and red-cabbage dye. This indicates that the cost performance (defined by [conversion efficiency]/[cost of dye]) of the latter solar cell (dye: red-cabbage) is larger by more than 50 times than that of the solar cell using Ruthenium complex, even if the effect of the difference between the halogen lamp and the standard light source is taken into account.

A review of recent progress in heterogeneous silicon tandem solar cells

Science.gov (United States)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

Correlation between the physical parameters of the i-nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters

Science.gov (United States)

Das, Debajyoti; Mondal, Praloy

2017-09-01

Growth of highly conducting nanocrystalline silicon (nc-Si) thin films of optimum crystalline volume fraction, involving dominant crystallographic preferred orientation with simultaneous low fraction of microstructures at a low substrate temperature and high growth rate, is a challenging task for its promising utilization in nc-Si solar cells. Utilizing enhanced electron density and superior ion flux densities of the high frequency (∼27.12 MHz) SiH4 plasma, improved nc-Si films have been produced by simple optimization of H2-dilution, controlling the ion damage and enhancing supply of atomic-hydrogen onto the growing surface. Single junction nc-Si p-i-n solar cells have been prepared with i-nc-Si absorber layer and optimized. The physical parameters of the absorber layer have been systematically correlated to variations of the solar cell parameters. The preferred alignment of crystallites, its contribution to the low recombination losses for conduction of charge carriers along the vertical direction, its spectroscopic correlation with the dominant growth of ultra-nanocrystalline silicon (unc-Si) component and corresponding longer wavelength absorption, especially in the neighborhood of i/n-interface region recognize scientific and technological key issues that pave the ground for imminent advancement of multi-junction silicon solar cells.

Efficiency enhancement of perovskite solar cells using structural and morphological improvement of CH3NH3PbI3 absorber layers

Science.gov (United States)

Alidaei, Maryam; Izadifard, Morteza; Ghazi, Mohammad E.; Ahmadi, Vahid

2018-01-01

Perovskite solar cells have been heavily investigated due to their unique properties such as high power conversion efficiency (PCE), low-cost fabrication by solution processes, high diffusion length, large absorption coefficient, and direct and tunable band gap. PCE of perovskite devices is strongly dependent on the absorber layer properties such as morphology, crystallinity, and compactness, which are required to be optimized. In this work, the CH3NH3PbI3 (170-480 nm) absorber layers with various methylammonium iodine (MAI) concentrations (7, 10, 20 and 40 mg ml-1) and perovskite solar cells with the fluorine-doped tin oxide (400 nm)/C-TiO2 (30 nm)/Meso-TiO2 (400 nm)/CH3NH3PbI3 (170-480 nm)/P3HT (30 nm)/Au (100 nm) structure were fabricated. A two-step solution process was used for deposition of the CH3NH3PbI3 absorber layers. The morphology, crystal structure, and optical properties of the perovskite layer grown on glass and also the photovoltaic properties of the fabricated solar cells were studied. The results obtained showed that by controlling the deposition conditions, due to the reduction in charge recombination, PCE enhancement of the perovskite solar cell (up to 11.6%) was accessible.

Applications of Fluorogens with Rotor Structures in Solar Cells.

Science.gov (United States)

Ong, Kok-Haw; Liu, Bin

2017-05-29

Solar cells are devices that convert light energy into electricity. To drive greater adoption of solar cell technologies, higher cell efficiencies and reductions in manufacturing cost are necessary. Fluorogens containing rotor structures may be helpful in addressing some of these challenges due to their unique twisted structures and photophysics. In this review, we discuss the applications of rotor-containing molecules as dyes for luminescent down-shifting layers and luminescent solar concentrators, where their aggregation-induced emission properties and large Stokes shifts are highly desirable. We also discuss the applications of molecules containing rotors in third-generation solar cell technologies, namely dye-sensitized solar cells and organic photovoltaics, where the twisted 3-dimensional rotor structures are used primarily for aggregation control. Finally, we discuss perspectives on the future role of molecules containing rotor structures in solar cell technologies.

Effect of solar-terrestrial phenomena on solar cell's efficiency

International Nuclear Information System (INIS)

Zahee, K. B.; Ansari, W.A.; Raza, S.M.M.

2012-01-01

It is assumed that the solar cell efficiency of PV device is closely related to the solar irradiance, consider the solar parameter Global Solar Irradiance (G) and the meteorological parameters like daily data of Earth Skin Temperature (E), Average Temperature (T), Relative Humidity (H) and Dew Frost Point (D), for the coastal city Karachi and a non-coastal city Jacobabad, K and J is used as a subscripts for parameters of Karachi and Jacobabad respectively. All variables used here are dependent on the location (latitude and longitude) of our stations except G. To employ ARIMA modeling, the first eighteen years data is used for modeling and forecast is done for the last five years data. In most cases results show good correlation among monthly actual and monthly forecasted values of all the predictors. Next, multiple linear regression is employed to the data obtained by ARIMA modeling and models for mean monthly observed G values are constructed. For each station, two equations are constructed, the R values are above 93% for each model, showing adequacy of the fit. Our computations show that solar cell efficiency can be increased if better modeling for meteorological predictors governs the process. (author)

Materials That Enhance Efficiency and Radiation Resistance of Solar Cells

Science.gov (United States)

Sun, Xiadong; Wang, Haorong

2012-01-01

A thin layer (approximately 10 microns) of a novel "transparent" fluorescent material is applied to existing solar cells or modules to effectively block and convert UV light, or other lower solar response waveband of solar radiation, to visible or IR light that can be more efficiently used by solar cells for additional photocurrent. Meanwhile, the layer of fluorescent coating material remains fully "transparent" to the visible and IR waveband of solar radiation, resulting in a net gain of solar cell efficiency. This innovation alters the effective solar spectral power distribution to which an existing cell gets exposed, and matches the maximum photovoltaic (PV) response of existing cells. By shifting a low PV response waveband (e.g., UV) of solar radiation to a high PV response waveband (e.g. Vis-Near IR) with novel fluorescent materials that are transparent to other solar-cell sensitive wavebands, electrical output from solar cells will be enhanced. This approach enhances the efficiency of solar cells by converting UV and high-energy particles in space that would otherwise be wasted to visible/IR light. This innovation is a generic technique that can be readily implemented to significantly increase efficiencies of both space and terrestrial solar cells, without incurring much cost, thus bringing a broad base of economical, social, and environmental benefits. The key to this approach is that the "fluorescent" material must be very efficient, and cannot block or attenuate the "desirable" and unconverted" waveband of solar radiation (e.g. Vis-NIR) from reaching the cells. Some nano-phosphors and novel organometallic complex materials have been identified that enhance the energy efficiency on some state-of-the-art commercial silicon and thin-film-based solar cells by over 6%.

Plastic solar cells : understanding the special additive

NARCIS (Netherlands)

van Franeker, H.; Janssen, R.A.J.

2015-01-01

Solar cells use freely available sunlight to make electricity. At the present time, solar electricity does not come cheap, because solar panels are rather expensive. Now imagine that we could reduce costs by printing solar panels like we print newspapers! We can do just that with plastic solar

Tandem photovoltaic solar cells and increased solar energy conversion efficiency

Science.gov (United States)

Loferski, J. J.

1976-01-01

Tandem photovoltaic cells, as proposed by Jackson (1955) to increase the efficiency of solar energy conversion, involve the construction of a system of stacked p/n homojunction photovoltaic cells composed of different semiconductors. It had been pointed out by critics, however, that the total power which could be extracted from the cells in the stack placed side by side was substantially greater than the power obtained from the stacked cells. A reexamination of the tandem cell concept in view of the development of the past few years is conducted. It is concluded that the use of tandem cell systems in flat plate collectors, as originally envisioned by Jackson, may yet become feasible as a result of the development of economically acceptable solar cells for large scale terrestrial power generation.

Numerical modelling of CIGS/CdS solar cell

Science.gov (United States)

Devi, Nisha; Aziz, Anver; Datta, Shouvik

2018-05-01

In this work, we design and analyze the Cu(In,Ga)Se2 (CIGS) solar cell using simulation software "Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D)". The conventional CIGS solar cell uses various layers, like intrinsic ZnO/Aluminium doped ZnO as transparent oxide, antireflection layer MgF2, and electron back reflection (EBR) layer at CIGS/Mo interface for good power conversion efficiency. We replace this conventional model by a simple model which is easy to fabricate and also reduces the cost of this cell because of use of lesser materials. The new designed model of CIGS solar cell is ITO/CIGS/OVC/CdS/Metal contact, where OVC is ordered vacancy compound. From this simple structure, even at very low illumination we are getting good results. We simulate this CIGS solar cell model by varying various physical parameters of CIGS like thickness, carrier density, band gap and temperature.

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

Science.gov (United States)

Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

Large-Grain Tin-Rich Perovskite Films for Efficient Solar Cells via Metal Alloying Technique.

Science.gov (United States)

Tavakoli, Mohammad Mahdi; Zakeeruddin, Shaik Mohammed; Grätzel, Michael; Fan, Zhiyong

2018-03-01

Fast research progress on lead halide perovskite solar cells has been achieved in the past a few years. However, the presence of lead (Pb) in perovskite composition as a toxic element still remains a major issue for large-scale deployment. In this work, a novel and facile technique is presented to fabricate tin (Sn)-rich perovskite film using metal precursors and an alloying technique. Herein, the perovskite films are formed as a result of the reaction between Sn/Pb binary alloy metal precursors and methylammonium iodide (MAI) vapor in a chemical vapor deposition process carried out at 185 °C. It is found that in this approach the Pb/Sn precursors are first converted to (Pb/Sn)I 2 and further reaction with MAI vapor leads to the formation of perovskite films. By using Pb-Sn eutectic alloy, perovskite films with large grain sizes up to 5 µm can be grown directly from liquid phase metal. Consequently, using an alloying technique and this unique growth mechanism, a less-toxic and efficient perovskite solar cell with a power conversion efficiency (PCE) of 14.04% is demonstrated, while pure Sn and Pb perovskite solar cells prepared in this manner yield PCEs of 4.62% and 14.21%, respectively. It is found that this alloying technique can open up a new direction to further explore different alloy systems (binary or ternary alloys) with even lower melting point. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

NARCIS (Netherlands)

Frijters, C.H.; Bolt, P.J.; Poodt, P.W.G.; Knaapen, R.; Brink, J. van den; Ruth, M.; Bremaud, D.; Illiberi, A.

2016-01-01

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale

Neutral Color Semitransparent Microstructured Perovskite Solar Cells

KAUST Repository

Eperon, Giles E.; Burlakov, Victor M.; Goriely, Alain; Snaith, Henry J.

2014-01-01

Neutral-colored semitransparent solar cells are commercially desired to integrate solar cells into the windows and cladding of buildings and automotive applications. Here, we report the use of morphological control of perovskite thin films to form

Solar Cell Capacitance Determination Based on an RLC Resonant Circuit

Directory of Open Access Journals (Sweden)

Petru Adrian Cotfas

2018-03-01

Full Text Available The capacitance is one of the key dynamic parameters of solar cells, which can provide essential information regarding the quality and health state of the cell. However, the measurement of this parameter is not a trivial task, as it typically requires high accuracy instruments using, e.g., electrical impedance spectroscopy (IS. This paper introduces a simple and effective method to determine the electric capacitance of the solar cells. An RLC (Resistor Inductance Capacitor circuit is formed by using an inductor as a load for the solar cell. The capacitance of the solar cell is found by measuring the frequency of the damped oscillation that occurs at the moment of connecting the inductor to the solar cell. The study is performed through simulation based on National Instruments (NI Multisim application as SPICE simulation software and through experimental capacitance measurements of a monocrystalline silicon commercial solar cell and a photovoltaic panel using the proposed method. The results were validated using impedance spectroscopy. The differences between the capacitance values obtained by the two methods are of 1% for the solar cells and of 9.6% for the PV panel. The irradiance level effect upon the solar cell capacitance was studied obtaining an increase in the capacitance in function of the irradiance. By connecting different inductors to the solar cell, the frequency effect upon the solar cell capacitance was studied noticing a very small decrease in the capacitance with the frequency. Additionally, the temperature effect over the solar cell capacitance was studied achieving an increase in capacitance with temperature.

Biometric and physiological parameters of Heliconia bihai grown in coastal region under different levels of solar radiation

Directory of Open Access Journals (Sweden)

Reivany Eduardo Morais Lima

2016-04-01

Full Text Available The aim of this work was evaluate the effect of different levels of light intensity on the physiology, vegetative and reproductive development of Heliconia bihai cv. Lobster Claw Two grown under coastal zone of Ceara State. Plants of this species were grown under full and 30%, 40% and 50% reduction sunlight intensity. It was evaluated the number of leaves and tillers per plant; amount of stalks; leaf area, water and carbohydrate content in the leaf next to the inflorescence arising and next to the inflorescence at harvest stage. Photosynthesis, transpiration and stomatal conductance of plants were measured for six consecutive months. Significant difference were attained for leaf area and water content in leaves close to the inflorescence at harvest stage, with lower values, and carbohydrate contents in leaves, with higher values in plants grown in full sun. The treatments with lower levels of solar radiation had higher amounts of stalks and higher vegetative growth, the reduction in vegetative growth of the plants under full sun was due to the lower photosynthetic rate and lower translocation of assimilates.

Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Bedair, Salah M. [North Carolina State Univ., Raleigh, NC (United States); Hauser, John R. [North Carolina State Univ., Raleigh, NC (United States); Elmasry, Nadia [North Carolina State Univ., Raleigh, NC (United States); Colter, Peter C. [North Carolina State Univ., Raleigh, NC (United States); Bradshaw, G. [North Carolina State Univ., Raleigh, NC (United States); Carlin, C. Z. [North Carolina State Univ., Raleigh, NC (United States); Samberg, J. [North Carolina State Univ., Raleigh, NC (United States); Edmonson, Kenneth [Spectrolab, Inc., Sylmar, CA (United States)

2012-07-31

We report on a joint research program between NCSU and Spectrolab to develop an upright multijunction solar cell structure with a potential efficiency exceeding the current record of 41.6% reported by Spectrolab. The record efficiency Ge/GaAs/InGaP triple junction cell structure is handicapped by the fact that the current generated by the Ge cell is much higher than that of both the middle and top cells. We carried out a modification of the record cell structure that will keep the lattice matched condition and allow better matching of the current generated by each cell. We used the concept of strain balanced strained layer superlattices (SLS), inserted in the i-layer, to reduce the bandgap of the middle cell without violating the desirable lattice matched condition. For the middle GaAs cell, we have demonstrated an n-GaAs/i-(InGaAs/GaAsP)/p-GaAs structure, where the In_xGa_1-xAs/GaAs_1-yP_y SLS is grown lattice matched to GaAs and with reduced bandgap from 1.43 eV to 1.2 eV, depending upon the values of x and y.

Study on indoor pollution by microbes grown in a solar house in Tokyo; Tokyo no solar house ni okeru kabi no jittai chosa

Energy Technology Data Exchange (ETDEWEB)

Tanaka, T; Aihara, M; Nakanishi, R; Ito, H [Ochanomizu University, Tokyo (Japan)

1997-11-25

Indoor pollution by microbes grown in a solar house is studied. It is a reinforced concrete building, having a total floor area of 260m{sup 2}, equipped with a flat type solar collector on the roof and a lighting window on the north, the former having an area of 16m{sup 2} and slanted at 60deg and the latter slanted at 60deg. It is also provided with a semi-underground room, to utilize heat capacity of soil for coolness in summer and warmness in winter. It provides a residential space throughout the year, with no artificial heating or air-conditioning system, naturally ventilated with air taken into the underground room and released out of a triangular shape on the roof. The building is also passively conditioned, being totally insulated with expanded polystyrene. Energy saving is the most important consideration for the solar house, slightly forcing the residents to exercise patience. For this reason, the solar house often smells musty, and pollution with microbes is quantitatively investigated. Microbes evolve more in the underground room than in the space above groun, because of higher humidity in the former. Accelerated ventilation or slight artificial air-conditioning will solve the trouble. 1 refs., 7 figs.

Acceptable contamination levels in solar grade silicon: From feedstock to solar cell

International Nuclear Information System (INIS)

Hofstetter, J.; Lelievre, J.F.; Canizo, C.; Luque, A. del

2009-01-01

Ultimately, alternative ways of silicon purification for photovoltaic applications are developed and applied. There is an ongoing debate about what are the acceptable contamination levels within the purified silicon feedstock to specify the material as solar grade silicon. Applying a simple model and making some additional assumptions, we calculate the acceptable contamination levels of different characteristic impurities for each fabrication step of a typical industrial mc-Si solar cell. The acceptable impurity concentrations within the finished solar cell are calculated for SRH recombination exclusively and under low injection conditions. It is assumed that during solar cell fabrication impurity concentrations are only altered by a gettering step. During the crystallization process, impurity segregation at the solid-liquid interface and at extended defects are taken into account. Finally, the initial contamination levels allowed within the feedstock are deduced. The acceptable concentration of iron in the finished solar cell is determined to be 9.7x10 -3 ppma whereas the concentration in the silicon feedstock can be as high as 12.5 ppma. In comparison, the titanium concentration admitted in the solar cell is calculated to be 2.7x10 -4 ppma and the allowed concentration of 2.2x10 -2 ppma in the feedstock is only two orders of magnitude higher. Finally, it is shown theoretically and experimentally that slow cooling rates can lead to a decrease of the interstitial Fe concentration and thus relax the purity requirements in the feedstock.

Hybrid Silicon Nanocone–Polymer Solar Cells

KAUST Repository

Jeong, Sangmoo

2012-06-13

Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.