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Sample records for small dimensional heterostructures

  1. A.E.S. characterisation of small dimensional heterostructures

    Gelsthorpe, A.J.

    2001-01-01

    Surface analysis is used to examine the outer layers of solid material to determine their properties and composition, and has many applications in industry. Atomic composition of the surface can be determined by Auger analysis. Depth profiles can also be obtained by exposing layers buried within a structure and then analysing them. This thesis presents improved techniques for analysing complex structures that have multiple thin layers or have significant topographical features. Bevelling techniques can be used to produce depth profiles of complex heterostructures by removing surface layers with a bevel. The work presented here shows the development of a chemical bevelling reactor to produce a system that is routinely used to make bevels on samples. The chemical bevelling reactor can also be used to correct for non-linear effects in the slope of the surface of the bevel that are usually present in other bevelling techniques. Chemical bevelling shows significant improvements in the depth resolution over the existing technique of ion beam milling. Artefacts due to surface topography are a common problem in Auger analysis as it is often difficult to identify the correct Auger reading from the artefact. A Cylindrical Mirror Analyser (CMA) described here, has been modified to detect artefacts. It uses three pairs of opposing detectors that observe 6 angles of azimuth simultaneously. The opposing detectors are used to identify topographical artefacts in two dimensions across the surface. The CMA also incorporates an electrostatic lens that deflects electrons onto the detectors along the same path independent of their energy. The operation and characterisation of the modified CMA and its electrostatic lens is described. Application to topographical features that show artefacts is also described. The CMA system can also be used to perform depth profiling by ion beam bevelling. This technique is applied to multi-layered heterostructures and a comparison is made between this

  2. Two-dimensional heterostructures for energy storage

    Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States); Pomerantseva, Ekaterina [Drexel Univ., Philadelphia, PA (United States)

    2017-06-12

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  3. Mixed Dimensional Van der Waals Heterostructures for Opto-Electronics.

    Jariwala, Deep

    The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into ``all-2D'' van der Waals heterostructures, this concept is not limited to 2D materials alone. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. In the first part of this talk I will present our work on emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices performed at Northwestern University. I will present two distinct examples of gate-tunable p-n heterojunctions 1. Single layer n-type MoS2\\ (2D) combined with p-type semiconducting single walled carbon nanotubes (1D) and 2. Single layer MoS2 combined with 0D molecular semiconductor, pentacene. I will present the unique electrical properties, underlying charge transport mechanisms and photocurrent responses in both the above systems using a variety of scanning probe microscopy techniques as well as computational analysis. This work shows that van der Waals interactions are robust across different dimensionalities of materials and can allow fabrication of semiconductor devices with unique geometries and properties unforeseen in bulk semiconductors. Finally, I will briefly discuss our recent work from Caltech on near-unity absorption in atomically-thin photovoltaic devices. This work is supported by the Materials Research Center at Northwestern University, funded by the National Science Foundation (NSF DMR-1121262) and the Resnick Sustainability Institute at Caltech.

  4. Heterostructures based on two-dimensional layered materials and their potential applications

    Li, Ming-yang; Chen, Chang-Hsiao; Shi, Yumeng; Li, Lain-Jong

    2015-01-01

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  5. Heterostructures based on two-dimensional layered materials and their potential applications

    Li, Ming-yang

    2015-12-04

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  6. Van Der Waals Heterostructures between Small Organic Molecules and Layered Substrates

    Han Huang

    2016-09-01

    Full Text Available Two dimensional atomic crystals, like grapheme (G and molybdenum disulfide (MoS2, exhibit great interest in electronic and optoelectronic applications. The excellent physical properties, such as transparency, semiconductivity, and flexibility, make them compatible with current organic electronics. Here, we review recent progress in the understanding of the interfaces of van der Waals (vdW heterostructures between small organic molecules (pentacene, copper phthalocyanine (CuPc, perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA, and dioctylbenzothienobenzothiophene (C8-BTBT and layered substrates (G, MoS2 and hexagonal boron nitride (h-BN. The influences of the underlying layered substrates on the molecular arrangement, electronic and vibrational properties will be addressed.

  7. Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

    Wei, Lan-ying; Lian, Chao; Meng, Sheng

    2017-05-01

    First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

  8. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

    Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

    2018-01-01

    Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

  9. Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

    Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

    2016-10-01

    Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

  10. Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

    Ghosh, Sumit; Manchon, Aurelien

    2018-01-01

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

  11. Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

    Ghosh, Sumit

    2018-04-02

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

  12. In situ degradation studies of two-dimensional WSe₂-graphene heterostructures.

    Wang, B; Eichfield, S M; Wang, D; Robinson, J A; Haque, M A

    2015-09-14

    Heterostructures of two-dimensional materials can be vulnerable to thermal degradation due to structural and interfacial defects as well as thermal expansion mismatch, yet a systematic study does not exist in the literature. In this study, we investigate the degradation of freestanding WSe2-graphene heterostructures due to heat and charge flow by performing in situ experiments inside a transmission electron microscope. Experimental results show that purely thermal loading requires higher temperatures (>850 °C), about 150 °C higher than that under combined electrical and thermal loading. In both cases, selenium is the first element to decompose and migration of silicon atoms from the test structure to the freestanding specimen initiates rapid degradation through the formation of tungsten disilicide and silicon carbide. The role of the current flow is to enhance the migration of silicon from the sample holder and to knock-out the selenium atoms. The findings of this study provide fundamental insights into the degradation of WSe2-graphene heterostructures and inspire their application in electronics for use in harsh environments.

  13. Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

    Henck, Hugo; Ben Aziza, Zeineb; Pierucci, Debora; Laourine, Feriel; Reale, Francesco; Palczynski, Pawel; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fèvre, Patrick; Lhuillier, Emmanuel; Wakamura, Taro; Mattevi, Cecilia; Rault, Julien E.; Calandra, Matteo; Ouerghi, Abdelkarim

    2018-04-01

    Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides (TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single-layer W S2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements, and density functional theory (DFT) calculations. The results show good electronic properties as well as a well-defined band arising from the strong splitting of the single-layer W S2 valence band at the K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single-layer W S2 . Our results provide an important reference for future studies of electronic properties of W S2 and its applications in valleytronic devices.

  14. Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.

    Zhou, Ruiping; Ostwal, Vaibhav; Appenzeller, Joerg

    2017-08-09

    The key appeal of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), or phosphorene for electronic applications certainly lies in their atomically thin nature that offers opportunities for devices beyond conventional transistors. It is also this property that makes them naturally suited for a type of integration that is not possible with any three-dimensional (3D) material, that is, forming heterostructures by stacking dissimilar 2D materials together. Recently, a number of research groups have reported on the formation of atomically sharp p/n-junctions in various 2D heterostructures that show strong diode-type rectification. In this article, we will show that truly vertical heterostructures do exhibit much smaller rectification ratios and that the reported results on atomically sharp p/n-junctions can be readily understood within the framework of the gate and drain voltage response of Schottky barriers that are involved in the lateral transport.

  15. Solution-Based Processing and Applications of Two-Dimensional Heterostructures

    Hersam, Mark

    Two-dimensional materials have emerged as promising candidates for next-generation electronics and optoelectronics, but advances in scalable nanomanufacturing are required to exploit this potential in real-world technology. This talk will explore methods for improving the uniformity of solution-processed two-dimensional materials with an eye toward realizing dispersions and inks that can be deposited into large-area thin-films. In particular, density gradient ultracentrifugation allows the solution-based isolation of graphene, boron nitride, montmorillonite, and transition metal dichalcogenides (e.g., MoS2, WS2, ReS2, MoSe2, WSe2) with homogeneous thickness down to the atomically thin limit. Similarly, two-dimensional black phosphorus is isolated in organic solvents or deoxygenated aqueous surfactant solutions with the resulting phosphorene nanosheets showing field-effect transistor mobilities and on/off ratios that are comparable to micromechanically exfoliated flakes. By adding cellulosic polymer stabilizers to these dispersions, the rheological properties can be tuned by orders of magnitude, thereby enabling two-dimensional material inks that are compatible with a range of additive manufacturing methods including inkjet, gravure, screen, and 3D printing. The resulting solution-processed two-dimensional heterostructures show promise in several device applications including photodiodes, anti-ambipolar transistors, gate-tunable memristors, and heterojunction photovoltaics.

  16. Two-dimensional electron gas in AlGaN/GaN heterostructures

    Li, J.Z.; Lin, J.Y.; Jiang, H.X.; Khan, M.A.; Chen, Q.

    1997-01-01

    The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. copyright 1997 American Vacuum Society

  17. Highly mobile charge-transfer excitons in two-dimensional WS2/tetracene heterostructures

    Zhu, Tong; Yuan, Long; Zhao, Yan; Zhou, Mingwei; Wan, Yan; Mei, Jianguo; Huang, Libai

    2018-01-01

    Charge-transfer (CT) excitons at heterointerfaces play a critical role in light to electricity conversion using organic and nanostructured materials. However, how CT excitons migrate at these interfaces is poorly understood. We investigate the formation and transport of CT excitons in two-dimensional WS2/tetracene van der Waals heterostructures. Electron and hole transfer occurs on the time scale of a few picoseconds, and emission of interlayer CT excitons with a binding energy of ~0.3 eV has been observed. Transport of the CT excitons is directly measured by transient absorption microscopy, revealing coexistence of delocalized and localized states. Trapping-detrapping dynamics between the delocalized and localized states leads to stretched-exponential photoluminescence decay with an average lifetime of ~2 ns. The delocalized CT excitons are remarkably mobile with a diffusion constant of ~1 cm2 s−1. These highly mobile CT excitons could have important implications in achieving efficient charge separation. PMID:29340303

  18. Stable Graphene-Two-Dimensional Multiphase Perovskite Heterostructure Phototransistors with High Gain.

    Shao, Yuchuan; Liu, Ye; Chen, Xiaolong; Chen, Chen; Sarpkaya, Ibrahim; Chen, Zhaolai; Fang, Yanjun; Kong, Jaemin; Watanabe, Kenji; Taniguchi, Takashi; Taylor, André; Huang, Jinsong; Xia, Fengnian

    2017-12-13

    Recently, two-dimensional (2D) organic-inorganic perovskites emerged as an alternative material for their three-dimensional (3D) counterparts in photovoltaic applications with improved moisture resistance. Here, we report a stable, high-gain phototransistor consisting of a monolayer graphene on hexagonal boron nitride (hBN) covered by a 2D multiphase perovskite heterostructure, which was realized using a newly developed two-step ligand exchange method. In this phototransistor, the multiple phases with varying bandgap in 2D perovskite thin films are aligned for the efficient electron-hole pair separation, leading to a high responsivity of ∼10 5 A W -1 at 532 nm. Moreover, the designed phase alignment method aggregates more hydrophobic butylammonium cations close to the upper surface of the 2D perovskite thin film, preventing the permeation of moisture and enhancing the device stability dramatically. In addition, faster photoresponse and smaller 1/f noise observed in the 2D perovskite phototransistors indicate a smaller density of deep hole traps in the 2D perovskite thin film compared with their 3D counterparts. These desirable properties not only improve the performance of the phototransistor, but also provide a new direction for the future enhancement of the efficiency of 2D perovskite photovoltaics.

  19. Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

    Sang Woon Lee

    2016-01-01

    Full Text Available Two-dimensional electron gas (2DEG at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3 (LAO/STO heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies.

  20. Synthesis, Characterization, and Properties of the Two-Dimensional Chalcogenides: Monolayers, Alloys, and Heterostructures

    Cain, Jeffrey D.

    Inspired by the triumphs of graphene, and motivated by its limitations, the science and engineering community is rapidly exploring the landscape of other layered materials in their atomically-thin forms. Dominating this landscape are the layered chalcogenides; diverse in chemistry, crystal structure, and properties, there are well over 100 primary members of this material family. Driven by quantum confinement, single layers (or few, in some cases) of these materials exhibit electronic, optical, and mechanical properties that diverge dramatically from their bulk counterparts. While initially isolated in monolayer form via mechanical exfoliation, the field of two-dimensional (2D) materials is being forced evolve to more scalable and reliable methods. Focusing on the chalcogenides (e.g. MoS2, Bi 2Se3, etc.), this dissertation introduces and mechanistically examines multiple novel synthetic approaches for the direct growth of monolayers, heterostructures, and alloys with the desired quality, reproducibility and generality. The first methods described in this thesis are physical vapor transport (PVT) and evaporative thinning (ET): a facile, top-down synthesis approach for creating ultrathin specimens of layered materials down to the two-dimensional limit. Evaporative thinning, applied in this study to the fabrication of A2X3 (Bi2Se3 and Sb2Te3) monolayers, is based on the controlled evaporation of material from initially thick specimens until the 2D limit is reached. The resultant flakes are characterized with a suite of imaging and spectroscopic techniques and the mechanism of ET is investigated via in-situ heating within a transmission electron microscope. Additionally, the basic transport properties of the resultant flakes are probed. The growth of ultrathin GeSe flakes is explored using PVT and the material's basic structure, properties, and stability are addressed. Second, oxide precursor based chemical vapor deposition (CVD) is presented for the direct growth of

  1. Quantum transport in new two-dimensional heterostructures: Thin films of topological insulators, phosphorene

    Majidi, Leyla; Zare, Moslem; Asgari, Reza

    2018-06-01

    The unusual features of the charge and spin transport characteristics are investigated in new two-dimensional heterostructures. Intraband specular Andreev reflection is realized in a topological insulator thin film normal/superconducting junction in the presence of a gate electric field. Perfect specular electron-hole conversion is shown for different excitation energy values in a wide experimentally available range of the electric field and also for all angles of incidence when the excitation energy has a particular value. It is further demonstrated that the transmission probabilities of the incoming electrons from different spin subbands to the monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure have different behavior with the angle of incidence and perfect transmission occurs at defined angles of incidence to the proposed structure with different length of the N region, and different alignments of magnetization vectors. Moreover, the sign change of the spin-current density is demonstrated by tuning the chemical potential and exchange field of the F region.

  2. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  3. Two-dimensional hole systems in indium-based quantum well heterostructures

    Loher, Josef

    2016-08-01

    The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of InAlAs/InGaAs/InAs:Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate. Within these magnetotransport experiments, a reproducible phenomenon of remarkable robustness emerged in the transverse Hall magnetoresistivity of the indium 2DHG systems which are grown on a special InAlAs step-graded metamorphic buffer layer structure to compensate crystal lattice mismatch. As a consequence of the strain relaxation process, these material systems are characterized by anisotropic properties along different crystallographic directions. We identify a puzzling offset phenomenon in the zero-field Hall magnetoresistance and demonstrate it to be a universal effect in systems with spatially anisotropic transport properties.

  4. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  5. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  6. Data Mining for New Two- and One-Dimensional Weakly Bonded Solids and Lattice-Commensurate Heterostructures.

    Cheon, Gowoon; Duerloo, Karel-Alexander N; Sendek, Austin D; Porter, Chase; Chen, Yuan; Reed, Evan J

    2017-03-08

    Layered materials held together by weak interactions including van der Waals forces, such as graphite, have attracted interest for both technological applications and fundamental physics in their layered form and as an isolated single-layer. Only a few dozen single-layer van der Waals solids have been subject to considerable research focus, although there are likely to be many more that could have superior properties. To identify a broad spectrum of layered materials, we present a novel data mining algorithm that determines the dimensionality of weakly bonded subcomponents based on the atomic positions of bulk, three-dimensional crystal structures. By applying this algorithm to the Materials Project database of over 50,000 inorganic crystals, we identify 1173 two-dimensional layered materials and 487 materials that consist of weakly bonded one-dimensional molecular chains. This is an order of magnitude increase in the number of identified materials with most materials not known as two- or one-dimensional materials. Moreover, we discover 98 weakly bonded heterostructures of two-dimensional and one-dimensional subcomponents that are found within bulk materials, opening new possibilities for much-studied assembly of van der Waals heterostructures. Chemical families of materials, band gaps, and point groups for the materials identified in this work are presented. Point group and piezoelectricity in layered materials are also evaluated in single-layer forms. Three hundred and twenty-five of these materials are expected to have piezoelectric monolayers with a variety of forms of the piezoelectric tensor. This work significantly extends the scope of potential low-dimensional weakly bonded solids to be investigated.

  7. Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

    Heiss, Martin

    2010-08-25

    In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal

  8. Bandgap engineering and charge separation in two-dimensional GaS-based van der Waals heterostructures for photocatalytic water splitting

    Wang, Biao; Kuang, Anlong; Luo, Xukai; Wang, Guangzhao; Yuan, Hongkuan; Chen, Hong

    2018-05-01

    Two-dimensional (2D) gallium sulfide (GaS), hexagonal boron nitride (h-BN) and graphitic carbon nitride (g-C3N4) have been fabricated and expected to be promising photocatalysts under ultraviolet irradiation. Here, we employ hybrid density functional calculations to explore the potential of the 2D GaS-based heterojunctions GaS/h-BN (g-C3N4) for the design of efficient water redox photocatalysts. Both heterostructures can be formed via van der Waals (vdW) interaction and are direct bandgap semiconductors, whose bandgaps are reduced comparing with isolated GaS, h-BN or g-C3N4 monolayers and whose bandedges straddle water redox potentials. Furthermore, the optical absorption of GaS/h-BN (g-C3N4) heterostructures is observably enhanced in the ultraviolet-visible (UV-vis) light range. The electron-hole pairs in GaS/h-BN (g-C3N4) heterostructures are completely separated from different layers. In addition, the in-plane biaxial strain can effectively modulate the electronic properties of GaS/h-BN (g-C3N4) heterostructures. Thus the GaS/h-BN (g-C3N4) heterostructures are anticipated to be promising candidates for photocatalytic water splitting to produce hydrogen.

  9. Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

    Wang, Shiqi [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); Yang, Xiangbo, E-mail: 20001038@m.scnu.edu.cn [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China); Liu, Chengyi Timon [School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China)

    2014-03-01

    Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

  10. Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

    Wang, Shiqi; Yang, Xiangbo; Liu, Chengyi Timon

    2014-01-01

    Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

  11. Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure

    Karasik, Boris S.; Gill, John J.; Mehdi, Imran; Crawford, Timothy J.; Sergeev, Andrei V.; Mitin, Vladimir V.

    2012-01-01

    High-resolution submillimeter/terahertz spectroscopy is important for studying atmospheric and interstellar molecular gaseous species. It typically uses heterodyne receivers where an unknown (weak) signal is mixed with a strong signal from the local oscillator (LO) operating at a slightly different frequency. The non-linear mixer devices for this frequency range are unique and are not off-the-shelf commercial products. Three types of THz mixers are commonly used: Schottky diode, superconducting hot-electron bolometer (HEB), and superconductor-insulation-superconductor (SIS) junction. A HEB mixer based on the two-dimensional electron gas (2DEG) formed at the interface of two slightly dissimilar semiconductors was developed. This mixer can operate at temperatures between 100 and 300 K, and thus can be used with just passive radiative cooling available even on small spacecraft.

  12. Manipulation of surface plasmon polariton propagation on isotropic and anisotropic two-dimensional materials coupled to boron nitride heterostructures

    Inampudi, Sandeep; Nazari, Mina; Forouzmand, Ali; Mosallaei, Hossein, E-mail: hosseinm@coe.neu.edu [Department of Electrical and Computer Engineering, Northeastern University, 360 Huntington Ave., Boston, Massachusetts 02115 (United States)

    2016-01-14

    We present a comprehensive analysis of surface plasmon polariton dispersion characteristics associated with isotropic and anisotropic two-dimensional atomically thin layered materials (2D sheets) coupled to h-BN heterostructures. A scattering matrix based approach is presented to compute the electromagnetic fields and related dispersion characteristics of stacked layered systems composed of anisotropic 2D sheets and uniaxial bulk materials. We analyze specifically the surface plasmon polariton (SPP) dispersion characteristics in case of isolated and coupled two-dimensional layers with isotropic and anisotropic conductivities. An analysis based on residue theorem is utilized to identify optimum optical parameters (surface conductivity) and geometrical parameters (separation between layers) to maximize the SPP field at a given position. The effect of type and degree of anisotropy on the shapes of iso-frequency curves and propagation characteristics is discussed in detail. The analysis presented in this paper gives an insight to identify optimum setup to enhance the SPP field at a given position and in a given direction on the surface of two-dimensional materials.

  13. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-01-01

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

  14. Three-dimensional Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O heterostructures for improving photocatalytic activity

    He, Xiaoyu [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Department of Physics and Electronic Engineering, Yangtze Normal University, Chongqing 408100 (China); Hu, Chenguo, E-mail: hucg@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Xi, Yi; Zhang, Kaiyou; Hua, Hao [Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

    2014-02-01

    Highlights: • Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O 3D network heterostructures are prepared via a simple precipitatation method. • Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O networks exhibit much enhanced photocatalytic activity. • High photocatalytic activity is attributed to its heterostructure and 3D architectures. - Abstract: Three-dimensional Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O heterostructures were fabricated by loading Ag{sub 2}O nanoparticles on WO{sub 3}·0.33H{sub 2}O 3D networks via a simple chemical precipitation method. The Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O heterostructures exhibited much enhanced photocatalytic activity for the degradation of methylene blue (MB) under simulated solar light irradiation. The optimal molar ratio of Ag{sub 2}O and WO{sub 3}·0.33H{sub 2}O is 1:2. The outstanding photocatalytic activity of the Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O can be attributed to its large surface area of the three-dimensional networks, the enhanced sunlight absorption and the prevention of electrons–holes combination from the heterostructures. The experiment result demonstrates that wide band gap semiconductor (WO{sub 3}·0.33H{sub 2}O) modified by narrow band gap metal oxide (Ag{sub 2}O) with 3D architecture will be an effective route to enhance its photocatalytic activity.

  15. Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

    Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

    2018-04-01

    This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

  16. Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

    Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

    2013-09-24

    We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

  17. Aligned TiO₂ nanotube/nanoparticle heterostructures with enhanced electrochemical performance as three-dimensional anode for lithium-ion microbatteries.

    Xie, Keyu; Guo, Min; Lu, Wei; Huang, Haitao

    2014-11-14

    A novel TiO₂ three-dimensional (3D) anode with an aligned TiO₂ nanotube/nanoparticle heterostructure (TiO₂ NTs/NPs) is developed by simply immersing as-anodized TiO₂ NTs into water and further crystallizing the TiO₂ NTs by post-annealing. The heterostructure, with its core in a tubular morphology and with both the outer and inner surface consisting of nanoparticles, is confirmed by FESEM and TEM. A reversible areal capacity of 0.126 mAh · cm(-2) is retained after 50 cycles for the TiO₂ NTs/NPs heterostructure electrode, which is higher than that of the TiO₂ NTs electrode (0.102 mAh · cm(-2) after 50 cycles). At the current densities of 0.02, 0.04, 0.06, 0.08, 0.10 and 0.20 mA · cm(-2), the areal capacities are 0.142, 0.127, 0.117, 0.110, 0.104 and 0.089 mAh · cm(-2), respectively, for the TiO₂ NTs/NPs heterostructure electrode compared to the areal capacities of 0.123, 0.112, 0.105, 0.101, 0.094 and 0.083 mAh · cm(-2), respectively, for the the TiO₂ NTs electrode. The enhanced electrochemical performance is attributed to the unique microstructure of the TiO₂ NTs/NPs heterostructure electrode with the TiO₂ NT core used as a straight pathway for electronic transport and with TiO₂ NP offering enhanced surface areas for facile Li+ insertion/extraction. The results described here inspire a facile approach to fabricate a 3D anode with an enhanced electrochemical performance for lithium-ion microbattery applications.

  18. Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures

    Upadhyay, Bhanu B.; Jha, Jaya; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar

    2018-05-01

    We have observed that the estimation of two-dimensional electron gas density is dependent on the device geometry. The geometric contribution leads to the anomalous estimation of the GaN based heterostructure properties. The observed discrepancy is found to originate from the anomalous area dependent capacitance of GaN based Schottky diodes, which is an integral part of the high electron mobility transistors. The areal capacitance density is found to increase for smaller radii Schottky diodes, contrary to a constant as expected intuitively. The capacitance is found to follow a second order polynomial on the radius of all the bias voltages and frequencies considered here. In addition to the quadratic dependency corresponding to the areal component, the linear dependency indicates a peripheral component. It is further observed that the peripheral to areal contribution is inversely proportional to the radius confirming the periphery as the location of the additional capacitance. The peripheral component is found to be frequency dependent and tends to saturate to a lower value for measurements at a high frequency. In addition, the peripheral component is found to vanish when the surface is passivated by a combination of N2 and O2 plasma treatments. The cumulative surface state density per unit length of the perimeter of the Schottky diodes as obtained by the integrated response over the distance between the ohmic and Schottky contacts is found to be 2.75 × 1010 cm-1.

  19. Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

    Shabani, J.; Kjaergaard, M.; Suominen, H. J.; Kim, Younghyun; Nichele, F.; Pakrouski, K.; Stankevic, T.; Lutchyn, R. M.; Krogstrup, P.; Feidenhans'l, R.; Kraemer, S.; Nayak, C.; Troyer, M.; Marcus, C. M.; Palmstrøm, C. J.

    2015-01-01

    Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system ...

  20. In Situ Integration of Anisotropic SnO₂ Heterostructures inside Three-Dimensional Graphene Aerogel for Enhanced Lithium Storage.

    Yao, Xin; Guo, Guilue; Ma, Xing; Zhao, Yang; Ang, Chung Yen; Luo, Zhong; Nguyen, Kim Truc; Li, Pei-Zhou; Yan, Qingyu; Zhao, Yanli

    2015-12-02

    Three-dimensional (3D) graphene aerogel (GA) has emerged as an outstanding support for metal oxides to enhance the overall energy-storage performance of the resulting hybrid materials. In the current stage of the studies, metals/metal oxides inside GA are in uncrafted geometries. Introducing structure-controlled metal oxides into GA may further push electrochemical properties of metal oxide-GA hybrids. Using rutile SnO2 as an example, we demonstrated here a facile hydrothermal strategy combined with a preconditioning technique named vacuum-assisted impregnation for in situ construction of controlled anisotropic SnO2 heterostructures inside GA. The obtained hybrid material was fully characterized in detail, and its formation mechanism was investigated by monitoring the phase-transformation process. Rational integration of the two advanced structures, anisotropic SnO2 and 3D GA, synergistically led to enhanced lithium-storage properties (1176 mAh/g for the first cycle and 872 mAh/g for the 50th cycle at 100 mA/g) as compared with its two counterparts, namely, rough nanoparticles@3D GA and anisotropic SnO2@2D graphene sheets (618 and 751 mAh/g for the 50th cycle at 100 mA/g, respectively). It was also well-demonstrated that this hybrid material was capable of delivering high specific capacity at rapid charge/discharge cycles (1044 mAh/g at 100 mA/g, 847 mAh/g at 200 mA/g, 698 mAh/g at 500 mA/g, and 584 mAh/g at 1000 mA/g). The in situ integration strategy along with vacuum-assisted impregnation technique presented here shows great potential as a versatile tool for accessing a variety of sophisticated smart structures in the form of anisotropic metals/metal oxides within 3D GA toward useful applications.

  1. Two-dimensional heterostructures of V2O5 and reduced graphene oxide as electrodes for high energy density asymmetric supercapacitors

    Nagaraju, Doddahalli H.

    2014-08-27

    In this article, we report the synthesis of electrode materials based on two-dimensional (2D) heterostructures of V2O5 nanosheets (V2O5 NS) and reduced graphene oxide (rGO) electrodes for asymmetric supercapacitor applications. Specifically, the 2D V2O5 and rGO/V2O5 nanosheet electrodes showed a specific capacitance of 253 F g-1 and 635 F g-1, respectively at a current density of 1 A g-1. The capacitance of the heterostructures is almost 2.5 times higher than the 2D V2O5 nanosheets alone. The corresponding energy density of 39 Wh kg-1 and 79.5 Wh kg-1 were achieved for the two electrodes at a power density of 900 W kg-1 in an asymmetric supercapacitor configuration. The energy and power density using the nanosheet heterostructure are, to our knowledge, higher than any of those that were previously reported for asymmetric supercapacitors using V2O5 electrodes. This journal is

  2. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

    Han Xiuxun; Honda, Yoshio; Narita, Tetsuo; Yamaguchi, Masahito; Sawaki, Nobuhiko; Tanaka, Tooru; Guo Qixin; Nishio, Mitsushiro

    2009-01-01

    Low-field Hall and Shubnikov-de Haas (SdH) measurements were performed on two-dimensional electron gas of Al 0.24 Ga 0.76 N/GaN and Al 0.24 Ga 0.76 N/AlN/GaN heterostructures at a low temperature. A dramatic improvement in electron mobility is observed in Al 0.24 Ga 0.76 N/AlN/GaN heterostructures with 1 and 2 nm thick AlN interlayers. A further increase in the AlN thickness degrades the transport behaviour. Transport and quantum scattering times were derived from the corresponding Hall mobility and the oscillatory part of the SdH signal. The ratio of the transport scattering time and the quantum scattering time increases from 3.87 in the heterostructure without the AlN interlayer to 14.34 with the 1 nm AlN interlayer and to 12.45 with the 2 nm AlN interlayer. A modified scattering calculation due to charged dislocation with a finite length suggests that dislocation related long-range scattering event tends to dominate both transport and quantum scattering times when a thin AlN interlayer is introduced.

  3. Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

    Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

    2017-06-28

    β-gallium oxide (β-Ga 2 O 3 ) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2 O 3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga 2 O 3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

  4. Design and realization of one-dimensional double hetero-structure photonic crystals for infrared-radar stealth-compatible materials applications

    Wang, Zhixun; Cheng, Yongzhi; Nie, Yan; Wang, Xian; Gong, Rongzhou

    2014-01-01

    In this paper, a new type one-dimensional (1D) double hetero-structure composite photonic crystal (CPC) for infrared-radar stealth-compatible materials applications was proposed and studied numerically and experimentally. First, based on transfer matrix method of thin-film optical theory, the propagation characteristics of the proposed structure comprising a stack of different alternating micrometer-thick layers of germanium and zinc sulfide were investigated numerically. Calculation results exhibit that this 1D single hetero-structure PC could achieve a flat high reflectivity gradually with increasing the number of the alternating media layers in a single broadband range. Then, based on principles of distributed Bragg reflector micro-cavity, a 1D double hetero-structure CPC comprising four PCs with thickness of 0.797 μm, 0.592 μm, 1.480 μm, and 2.114 μm, respectively, was proposed. Calculation results exhibit that this CPC could achieve a high reflectance of greater than 0.99 in the wavelength ranges of 3–5 μm and 8–14 μm and agreed well with experiment. Further experiments exhibit that the infrared emissivity of the proposed CPC is as low as 0.073 and 0.042 in the wavelength ranges of 3–5 μm and 8–12 μm, respectively. In addition, the proposed CPC can be used to construct infrared-radar stealth-compatible materials due to its high transmittance in radar wave band

  5. Design and realization of one-dimensional double hetero-structure photonic crystals for infrared-radar stealth-compatible materials applications

    Wang, Zhixun; Cheng, Yongzhi, E-mail: cyz0715@126.com; Nie, Yan; Wang, Xian; Gong, Rongzhou, E-mail: rzhgong@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-08-07

    In this paper, a new type one-dimensional (1D) double hetero-structure composite photonic crystal (CPC) for infrared-radar stealth-compatible materials applications was proposed and studied numerically and experimentally. First, based on transfer matrix method of thin-film optical theory, the propagation characteristics of the proposed structure comprising a stack of different alternating micrometer-thick layers of germanium and zinc sulfide were investigated numerically. Calculation results exhibit that this 1D single hetero-structure PC could achieve a flat high reflectivity gradually with increasing the number of the alternating media layers in a single broadband range. Then, based on principles of distributed Bragg reflector micro-cavity, a 1D double hetero-structure CPC comprising four PCs with thickness of 0.797 μm, 0.592 μm, 1.480 μm, and 2.114 μm, respectively, was proposed. Calculation results exhibit that this CPC could achieve a high reflectance of greater than 0.99 in the wavelength ranges of 3–5 μm and 8–14 μm and agreed well with experiment. Further experiments exhibit that the infrared emissivity of the proposed CPC is as low as 0.073 and 0.042 in the wavelength ranges of 3–5 μm and 8–12 μm, respectively. In addition, the proposed CPC can be used to construct infrared-radar stealth-compatible materials due to its high transmittance in radar wave band.

  6. One-dimensional Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterostructures for enhanced hydrogen generation

    Gao, Hongqing [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Zhang, Peng, E-mail: Zhangp@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Hu, Junhua, E-mail: Hujh@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Pan, Jimin [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); Fan, Jiajie [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Shao, Guosheng [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Institute for Renewable Energy and Environmental Technologies, University of Bolton, Bolton BL35AB (United Kingdom)

    2017-01-01

    Graphical abstract: We reported one-dimensional solid-state Z-scheme photosynthetic heterojunction system with Pt nanoparticle as an electron collector and WO{sub 3} as a hole collector, leading to effective charge separation. - Highlights: • The composite nanofibers were fabricated by facile electrospinning technique. • The composite nanofibers exhibited enhanced activity for H{sub 2} evolution. • Enhanced activity is due to the formation of Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterojunction. - Abstract: One-dimensional Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterostructures were fabricated by integrating a facile electrospinning technique and subsequent annealing in air. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and UV–vis diffuse reflectance spectroscopy, were used to characterize the as-fabricated samples. The results showed that the H{sub 2}-generation of the as-fabricated one-dimensional Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterostructures (S2) was greatly enhanced compared with pure TiO{sub 2} nanofibers (S0) and TiO{sub 2}/WO{sub 3} nanofibers (S1). The enhanced photocatalyst activities were mainly attributed to the solid-state Z-scheme photosynthetic heterojunction system with Pt nanoparticle as an electron collector and WO{sub 3} as a hole collector, leading to effective charge separation on these semiconductors, which were evidenced by electrochemical impedance spectroscopy (EIS) and photocurrent analysis.

  7. Acousto-optical interaction of surface acoustic and optical waves in a two-dimensional phoxonic crystal hetero-structure cavity.

    Ma, Tian-Xue; Zou, Kui; Wang, Yue-Sheng; Zhang, Chuanzeng; Su, Xiao-Xing

    2014-11-17

    Phoxonic crystal is a promising material for manipulating sound and light simultaneously. In this paper, we theoretically demonstrate the propagation of acoustic and optical waves along the truncated surface of a two-dimensional square-latticed phoxonic crystal. Further, a phoxonic crystal hetero-structure cavity is proposed, which can simultaneously confine surface acoustic and optical waves. The interface motion and photoelastic effects are taken into account in the acousto-optical coupling. The results show obvious shifts in eigenfrequencies of the photonic cavity modes induced by different phononic cavity modes. The symmetry of the phononic cavity modes plays a more important role in the single-phonon exchange process than in the case of the multi-phonon exchange. Under the same deformation, the frequency shift of the photonic transverse electric mode is larger than that of the transverse magnetic mode.

  8. Lateral topological crystalline insulator heterostructure

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  9. Terahertz response of two-dimensional charge carrier systems in GaAs-based heterostructures; Terahertz-Antwort von zweidimensionalen Ladungstraegersystemen in GaAs-basierten Heterostrukturen

    Grunwald, Torben

    2009-12-17

    This thesis deals with the THz response of two-dimensional charge carrier systems in different semiconductor heterostructures under varying conditions. The utilized spectrometer is suitable for time-resolved optical pump - THz probe experiments, as well as for optical pump-probe experiments in the near infrared for identical conditions. It allows the investigation of the transverse dielectric function of both, a (GaIn)As/GaAs quantum well and a two-dimensional electron gas in a GaAs-based heterostructure. First, the THz response of an electron-hole plasma is examined for different carrier densities. The plasma is generated by interband transitions in a (GaIn)As/GaAs quantum well. The measured transverse dielectric function reveals that the plasma behaves in accordance with the classical Drude oscillator model. It also conforms to the microscopic theory of the THz response of corresponding many-body systems. Evidence of a plasma resonance in the negative imaginary part of the inverse dielectric function is found. The squared peak frequency of the resonance is proportional to the carrier density of the plasma. This behavior corresponds to the plasma frequency of a three-dimensional plasma. Overall, it can be shown that the transverse THz response of a two-dimensional electron-hole plasma behaves like the response of a three-dimensional plasma. Therefore, the transversal THz response of an electron-hole plasma seems to be independent of the dimension of the charge carrier system. Secondly, the behavior of the quantum well for a 1s-exciton dominated carrier system is investigated. A good agreement between experiment and microscopic theory is obtained for the dielectric function. The negative imaginary part of the inverse dielectric function shows a resonance at the intraexcitonic 1s-2p transition frequency, even in weakly excited excitonic systems. Increasing the carrier density leads to a plasma-like behavior of the system. However, in these densities a significant

  10. A multi-dimensional sampling method for locating small scatterers

    Song, Rencheng; Zhong, Yu; Chen, Xudong

    2012-01-01

    A multiple signal classification (MUSIC)-like multi-dimensional sampling method (MDSM) is introduced to locate small three-dimensional scatterers using electromagnetic waves. The indicator is built with the most stable part of signal subspace of the multi-static response matrix on a set of combinatorial sampling nodes inside the domain of interest. It has two main advantages compared to the conventional MUSIC methods. First, the MDSM is more robust against noise. Second, it can work with a single incidence even for multi-scatterers. Numerical simulations are presented to show the good performance of the proposed method. (paper)

  11. Dimensional analysis of small-scale steam explosion experiments

    Huh, K.; Corradini, M.L.

    1986-01-01

    Dimensional analysis applied to Nelson's small-scale steam explosion experiments to determine the qualitative effect of each relevant parameter for triggering a steam explosion. According to experimental results, the liquid entrapment model seems to be a consistent explanation for the steam explosion triggering mechanism. The three-dimensional oscillatory wave motion of the vapor/liquid interface is analyzed to determine the necessary conditions for local condensation and production of a coolant microjet to be entrapped in fuel. It is proposed that different contact modes between fuel and coolant may involve different initiation mechanisms of steam explosions

  12. Diffusion-controlled growth of molecular heterostructures: fabrication of two-, one-, and zero-dimensional C(60) nanostructures on pentacene substrates.

    Breuer, Tobias; Witte, Gregor

    2013-10-09

    A variety of low dimensional C60 structures has been grown on supporting pentacene multilayers. By choice of substrate temperature during growth the effective diffusion length of evaporated fullerenes and their nucleation at terraces or step edges can be precisely controlled. AFM and SEM measurements show that this enables the fabrication of either 2D adlayers or solely 1D chains decorating substrate steps, while at elevated growth temperature continuous wetting of step edges is prohibited and instead the formation of separated C60 clusters pinned at the pentacene step edges occurs. Remarkably, all structures remain thermally stable at room temperature once they are formed. In addition the various fullerene structures have been overgrown by an additional pentacene capping layer. Utilizing the different probe depth of XRD and NEXAFS, we found that no contiguous pentacene film is formed on the 2D C60 structure, whereas an encapsulation of the 1D and 0D structures with uniformly upright oriented pentacene is achieved, hence allowing the fabrication of low dimensional buried organic heterostructures.

  13. Wave mechanics applied to semiconductor heterostructures

    Bastard, G.

    1990-01-01

    This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

  14. Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

    Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Justinas; Forsberg, Urban; Persson, Per O. Å.; Janzén, Erik [Department of Physics, Chemistry, and Biology, Linköping University, SE 581 83 Linköping (Sweden)

    2015-06-22

    A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

  15. X = S, Se, Te) heterostructures

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2018-01-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

  16. Oxygen vacancy induced two-dimensional electron system in disordered-crystalline LaAlO{sub 3}/KTaO{sub 3} heterostructures

    Zapf, Michael; Gabel, Judith; Scheiderer, Philipp; Dudy, Lenart; Sing, Michael; Claessen, Ralph [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, Christoph; Lee, Tien-Lin [Diamond Light Source Ltd., Didcot (United Kingdom)

    2016-07-01

    Two-dimensional electron systems (2DESs) in oxide heterostructures based on SrTiO{sub 3} are considered to be a promising platform for future microelectronic technology. A variety of interesting properties such as ferromagnetism, resistive switching and superconductivity are linked to interfacial n-doping involving oxygen vacancies. The introduction of a high Z-cation with large spin-orbit coupling like Ta offers an exciting new parameter. We report on a new oxygen vacancy induced 2DES located at the interface of disordered LaAlO{sub 3} and crystalline KTaO{sub 3}, which exhibits remarkably high electron mobilities and charge carrier concentrations. The number of charge carriers can be readily manipulated by the film thickness and irradiation with intense X-rays. Our synchrotron-based hard X-ray photoemission experiments provide a direct probe of the Ta 5d charge carriers at the buried interface to obtain information on the charge carrier density, its depth distribution, and the band structure.

  17. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C. [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States); Wegscheider, W. [Laboratorium fuer Festkoerperphysik, ETH Zurich, 8093 Zurich (Switzerland); Mani, R.G., E-mail: rmani@gsu.edu [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States)

    2014-11-15

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R{sub xx} vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported.

  18. Polarization and charge-transfer effect on the transport properties in two-dimensional electron gases/LaNiO3 heterostructure

    Chen, M. J.; Ning, X. K.; Wang, Z. J.; Liu, P.; Wang, S. F.; Wang, J. L.; Fu, G. S.; Ma, S.; Liu, W.; Zhang, Z. D.

    2018-01-01

    The film thickness dependent transport properties of the LaNiO3 (LNO) layer epitaxially grown on LaAlO3/SrTiO3 (LAO) 2-dimensional electronic gas (2DEG) have been investigated. The ultrathin LNO films grown on the 2DEG have a sheet resistance below the values of h/e2 in all temperature ranges. The electron density is enhanced by more than one order of magnitude by capping LNO films. X-ray photoelectron spectroscopy shows that the interface undergoes unambiguous charge transfer and electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. The polar-catastrophe of the 2DEG is directly linked to the electronic structure and transport properties of the LNO. The transport properties can be well modulated by the thickness of the LAO in the 2DEG, and the data can be well fitted with the polar-catastrophe scenario. These results suggest a general approach to tunable functional films in oxide heterostructures with the 2DEG.

  19. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C.; Wegscheider, W.; Mani, R.G.

    2014-01-01

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R xx vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported

  20. Impurity-induced states in superconducting heterostructures

    Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

    2018-04-01

    Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

  1. Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures

    Pei, Qi; Wang, Xiaocha; Zou, Jijun; Mi, Wenbo

    2018-05-01

    As a research upsurge, van der Waals (vdW) heterostructures give rise to numerous combined merits and novel applications in nanoelectronics fields. Here, we systematically investigate the electronic structure of MnPSe3/CrSiTe3 vdW heterostructures with various stacking patterns. Then, particular attention of this work is paid on the band structure modulations in MnPSe3/CrSiTe3 vdW heterostructures via biaxial strain or electric field. Under a tensile strain, the relative band edge positions of heterostructures transform from type-I (nested) to type-II (staggered). The relocation of conduction band minimum also brings about a transition from indirect to direct band gap. Under a compressive strain, the electronic properties change from semiconducting to metallic. The physical mechanism of strain-dependent band structure may be ascribed to the shifts of the energy bands impelled by different superposition of atomic orbitals. Meanwhile, our calculations manifest that band gap values of MnPSe3/CrSiTe3 heterostructures are insensitive to the electric field. Even so, by applying a suitable intensity of negative electric field, the band alignment transition from type-I to type-II can also be realized. The efficient band structure modulations via external factors endow MnPSe3/CrSiTe3 heterostructures with great potential in novel applications, such as strain sensors, photocatalysis, spintronic and photoelectronic devices.

  2. High mobility two-dimensional hole gases in GaAs/AlGaAs heterostructures; Hochbewegliche zweidimensionale Lochsysteme in GaAs/AlGaAs Heterostrukturen

    Gerl, Christian

    2009-10-14

    This thesis outlines the fabrication of high mobility two-dimensional hole-gases (2DHG) in GaAs/AlGaAs heterostructures with molecular beam epitaxy (MBE) and their characterization with magnetotransport measurements at low temperatures between 4 K and 30 mK. Here the optimization of the carrier mobility is focused. This will be achieved by introducing a novel carbon-filament doping source, with which contaminations of the MBE system and therefore in the grown layers can be reduced and by vary the band structure design to minimize scattering processes. With the help of these actions, hole mobilities above 1 E6 cm{sup 2}/Vs are achievable, what reflects an increase of factor 3 in the (001)- and factor 6.5 in the (110)- oriented transport plane compared to common 2DHGs. Furthermore states of the fractional Quantum Hall Effect can be observed in these 2DHGs, only visible in n-doped 2D systems so fare. Magnetotransport measurements on 2DHGs with aluminum gates reveal a hysteretic behavior of the carrier density with respect to the gate potential which can be attributed to the incorporation mechanisms of carbon atoms as acceptor. Temperature dependent magnetotransport measurements allow the evaluation of effective mass and quantum scattering time as well as the dependence of these parameters from the band structure design. In these experiments an aperiodic behavior of the Shubnikov-de Haas oscillations can be observed in the inverse magnetic field, which is attributed to the position of the fermi energy in the immediate vicinity of crossing regions of the complex Landau fan of 2DHGs. (orig.)

  3. Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O3/LaAlO3/SrTiO3 Heterostructures.

    Wang, Shuangbao; Bai, Yuhang; Xie, Lin; Li, Chen; Key, Julian D; Wu, Di; Wang, Peng; Pan, Xiaoqing

    2018-01-10

    Interfacial fine structures of bare LaAlO 3 /SrTiO 3 (LAO/STO) heterostructures are compared with those of LAO/STO heterostructures capped with upward-polarized Pb(Zr 0.1 ,Ti 0.9 )O 3 (PZT up ) or downward-polarized Pb(Zr 0.5 ,Ti 0.5 )O 3 (PZT down ) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired electron energy-loss spectroscopy mapping, we are able to directly observe electron transfer from Ti 4+ to Ti 3+ and ionic displacements at the interface of bare LAO/STO and PZT down /LAO/STO heterostructure unit cell by unit cell. No evidence of Ti 3+ is observed at the interface of the PZT up /LAO/STO samples. Furthermore, the confinement of the two-dimensional electron gas (2DEG) at the interface is determined by atomic-column spatial resolution. Compared with the bare LAO/STO interface, the 2DEG density at the LAO/STO interface is enhanced or depressed by the PZT down or PZT up overlayer, respectively. Our microscopy studies shed light on the mechanism of ferroelectric modulation of interfacial transport at polar/nonpolar oxide heterointerfaces, which may facilitate applications of these materials as nonvolatile memory.

  4. Tunable band gaps in graphene/GaN van der Waals heterostructures

    Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

    2014-01-01

    Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

  5. Fabrication and assembly of two-dimensional TiO2/WO3·H2O heterostructures with type II band alignment for enhanced photocatalytic performance

    Xu, Tao; Wang, Yun; Zhou, Xiaofang; Zheng, Xiaoli; Xu, Qun; Chen, Zhimin; Ren, Yumei; Yan, Bo

    2017-05-01

    The recombination of photo-induced charges is one of the main issues to limit the large-scale applications in photocatalysis and photoelectrocatalysis. To improve the charge separation, we fabricate a novel type II 2D ultrathin TiO2/WO3·H2O heterostructures with the assistance of supercritical CO2 (SC CO2) in this work. The as-fabricated heterostructures possess high photocatalytic activity for the degradation of methyl orange(MO) and high photocurrent response under simulated solar light (AM 1.5). For the TiO2/WO3·H2O heterostructures, the MO solution could be degraded by 95.5% in 150 min, and the photocurrent density reaches to 6.5 μA cm-2, exhibiting a significant enhancement compared with pure TiO2 and WO3·H2O nanosheets.

  6. Heterostructures based on inorganic and organic van der Waals systems

    Lee, Gwan-Hyoung; Lee, Chul-Ho; Zande, Arend M. van der; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Hone, James; Nuckolls, Colin; Heinz, Tony F.; Kim, Philip

    2014-01-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS 2 heterostructures for memory devices; graphene/MoS 2 /WSe 2 /graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors

  7. THE THREE-DIMENSIONAL STRUCTURE OF THE SMALL MAGELLANIC CLOUD

    Subramanian, Smitha; Subramaniam, Annapurni

    2012-01-01

    The three-dimensional structure of the inner Small Magellanic Cloud (SMC) is investigated using the red clump (RC) stars and the RR Lyrae stars (RRLS), which represent the intermediate-age and the old stellar populations of a galaxy. The V- and I-band photometric data from the OGLE III catalog are used for our study. The mean dereddened I 0 magnitude of the RC stars and the RRLS are used to study the relative positions of the different regions in the SMC with respect to the mean SMC distance. This shows that the northeastern part of the SMC is closer to us. The line-of-sight depth (front to back distance) across the SMC is estimated using the dispersion in the I 0 magnitudes of both the RC stars and the RRLS and found to be large (∼14 kpc) for both populations. The similarity in their depth distribution suggests that both of these populations occupy a similar volume of the SMC. The surface density distribution and the radial density profile of the RC stars suggest that they are more likely to be distributed in a nearly spheroidal system. The tidal radius estimated for the SMC system is ∼7-12 kpc. An elongation along the NE-SW direction is seen in the surface density map of the RC stars. The surface density distribution of the RRLS in the SMC is nearly circular. Based on all of the above results the observed structure of the SMC, in which both the RC stars and RRLS are distributed, is approximated as a triaxial ellipsoid. The parameters of the ellipsoid are obtained using the inertia tensor analysis. We estimated the axes ratio, inclination of the longest axis with the line of sight (i), and the position angle (φ) of the longest axis of the ellipsoid on the sky from the analysis of the RRLS. The analysis of the RC stars with the assumption that they are extended up to a depth of 3.5 times the sigma (width of dereddened I 0 magnitude distribution, corrected for intrinsic spread and observational errors) was also found to give similar axes ratio and orientation

  8. The Three-dimensional Structure of the Small Magellanic Cloud

    Subramanian, Smitha; Subramaniam, Annapurni

    2012-01-01

    The three-dimensional structure of the inner Small Magellanic Cloud (SMC) is investigated using the red clump (RC) stars and the RR Lyrae stars (RRLS), which represent the intermediate-age and the old stellar populations of a galaxy. The V- and I-band photometric data from the OGLE III catalog are used for our study. The mean dereddened I 0 magnitude of the RC stars and the RRLS are used to study the relative positions of the different regions in the SMC with respect to the mean SMC distance. This shows that the northeastern part of the SMC is closer to us. The line-of-sight depth (front to back distance) across the SMC is estimated using the dispersion in the I 0 magnitudes of both the RC stars and the RRLS and found to be large (~14 kpc) for both populations. The similarity in their depth distribution suggests that both of these populations occupy a similar volume of the SMC. The surface density distribution and the radial density profile of the RC stars suggest that they are more likely to be distributed in a nearly spheroidal system. The tidal radius estimated for the SMC system is ~7-12 kpc. An elongation along the NE-SW direction is seen in the surface density map of the RC stars. The surface density distribution of the RRLS in the SMC is nearly circular. Based on all of the above results the observed structure of the SMC, in which both the RC stars and RRLS are distributed, is approximated as a triaxial ellipsoid. The parameters of the ellipsoid are obtained using the inertia tensor analysis. We estimated the axes ratio, inclination of the longest axis with the line of sight (i), and the position angle (phi) of the longest axis of the ellipsoid on the sky from the analysis of the RRLS. The analysis of the RC stars with the assumption that they are extended up to a depth of 3.5 times the sigma (width of dereddened I 0 magnitude distribution, corrected for intrinsic spread and observational errors) was also found to give similar axes ratio and orientation

  9. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

    Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Lundin, V. W.; Zavarin, E. E.; Yagovkina, M. A.; Sakharov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Usov, S. O. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Bulashevich, K. A.; Karpov, S. Yu. [“Soft-Impact” Ltd. (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)

    2016-10-15

    The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.

  10. Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication

    Kurowski, Ludovic; Bernard, Dorothee; Constant, Eugene; Decoster, Didier

    2004-01-01

    Hydrogen incorporation in n-type Si-doped GaAs epilayers is a well-known process which leads to the neutralization of the active Si impurities with the formation of SiH complexes. Recently, we have shown that SiH complex dissociation and, consequently, Si-dopant reactivation could occur when the epilayers are exposed to an electron beam. Two epilayers have been studied: the first is a 0.35 μm thick hydrogenated Si-doped GaAs epilayer and the second is Si planar-doped AlGaAs/GaAs/InGaAs heterostructures. Firstly, Hall effect measurements have been carried out on the epilayers exposed, after RF hydrogen plasma exposition, to increasing electron doses with different injection energies. For the 2D heterostructures, we have observed that the free carrier density N s does not vary significantly for weak electron densities. This reactivation presents a threshold value, contrary to the 0.35 μm epilayer in which N s varies quite linearly. It will be shown that such phenomena might be attributed to the filling of surface states as the dopants are progressively reactivated. Then, using a high spatial resolution electron beam lithography system, nanometric conductive patterns have been fabricated starting from hydrogenated epilayers. Electric measurements have been performed and the results obtained show that about 15 nm spatial resolution could be expected. In conclusion, taking into account this spatial resolution, the high spatial contrast of conductivity which could be expected due to the existence of an electron dose threshold, and the high mobility of the AlGaAs/GaAs/InGaAs heterostructure, the effects described in this paper could open a new way for the fabrication of III-V 1D or 2D mesoscopic structures for electronic or optoelectronic applications

  11. Small angle X-ray scattering experiments with three-dimensional imaging gas detectors

    La Monaca, A.; Iannuzzi, M.; Messi, R.

    1985-01-01

    Measurements of small angle X-ray scattering of lupolen - R, dry collagen and dry cornea are presented. The experiments have been performed with synchrotron radiation and a new three-dimensional imaging drif-chamber gas detector

  12. Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

    Link, A.

    2004-12-01

    The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

  13. Quantum engineering of transistors based on 2D materials heterostructures

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  14. Quantum engineering of transistors based on 2D materials heterostructures.

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  15. Multi-dimensional optimization of small wind turbine blades

    Sessarego, Matias; Wood, David

    2015-01-01

    used to reduce the rotor inertia to help minimize starting time. Two airfoils are considered: the 10% thick SG6043 which has excellent lift:drag performance at low Reynolds number and the SD7062 whose extra thickness (14%) has some structural advantages, particularly for the weaker material (c). All......This paper describes a computer method to allow the design of small wind turbine blades for the multiple objectives of rapid starting, efficient power extraction, low noise, and minimal mass. For the sake of brevity, only the first two and the last objectives are considered in this paper....... The optimization aimed to study a range of blade materials, from traditional fibreglass through sustainable alternatives to rapid prototyping plastic. Because starting performance depends on blade inertia, there is a complex interaction between the material properties and the aerodynamics. Example blades of 1.1 m...

  16. Three-Dimensional Heterostructures of MoS 2 Nanosheets on Conducting MoO 2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction

    Nikam, Revannath Dnyandeo

    2015-10-05

    Molybdenum disulfide (MoS) is a promising catalyst for hydrogen evolution reaction (HER) because of its unique nature to supply active sites in the reaction. However, the low density of active sites and their poor electrical conductivity have limited the performance of MoS in HER. In this work, we synthesized MoS nanosheets on three-dimensional (3D) conductive MoO via a two-step chemical vapor deposition (CVD) reaction. The 3D MoO structure can create structural disorders in MoS nanosheets (referred to as 3D MoS/MoO), which are responsible for providing the superior HER activity by exposing tremendous active sites of terminal disulfur of S2 (in MoS) as well as the backbone conductive oxide layer (of MoO) to facilitate an interfacial charge transport for the proton reduction. In addition, the MoS nanosheets could protect the inner MoO core from the acidic electrolyte in the HER. The high activity of the as-synthesized 3D MoS/MoO hybrid material in HER is attributed to the small onset overpotential of 142 mV, a largest cathodic current density of 85 mA cm, a low Tafel slope of 35.6 mV dec, and robust electrochemical durability.

  17. Three-Dimensional Heterostructures of MoS 2 Nanosheets on Conducting MoO 2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction

    Nikam, Revannath Dnyandeo; Lu, Ang-Yu; Sonawane, Poonam Ashok; Kumar, U. Rajesh; Yadav, Kanchan; Li, Lain-Jong; Chen, Yit Tsong

    2015-01-01

    Molybdenum disulfide (MoS) is a promising catalyst for hydrogen evolution reaction (HER) because of its unique nature to supply active sites in the reaction. However, the low density of active sites and their poor electrical conductivity have limited the performance of MoS in HER. In this work, we synthesized MoS nanosheets on three-dimensional (3D) conductive MoO via a two-step chemical vapor deposition (CVD) reaction. The 3D MoO structure can create structural disorders in MoS nanosheets (referred to as 3D MoS/MoO), which are responsible for providing the superior HER activity by exposing tremendous active sites of terminal disulfur of S2 (in MoS) as well as the backbone conductive oxide layer (of MoO) to facilitate an interfacial charge transport for the proton reduction. In addition, the MoS nanosheets could protect the inner MoO core from the acidic electrolyte in the HER. The high activity of the as-synthesized 3D MoS/MoO hybrid material in HER is attributed to the small onset overpotential of 142 mV, a largest cathodic current density of 85 mA cm, a low Tafel slope of 35.6 mV dec, and robust electrochemical durability.

  18. All or nothing: On the small fluctuations of two-dimensional string theoretic black holes

    Gilbert, Gerald [Univ. of Maryland, College Park, MD (United States); Raiten, Eric [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)

    1992-10-01

    A comprehensive analysis of small fluctuations about two-dimensional string-theoretic and string-inspired black holes is presented. It is shown with specific examples that two-dimensional black holes behave in a radically different way from all known black holes in four dimensions. For both the SL(2,R)/U(1) black hole and the two-dimensional black hole coupled to a massive dilaton with constant field strength, it is shown that there are a {\\it continuous infinity} of solutions to the linearized equations of motion, which are such that it is impossible to ascertain the classical linear response. It is further shown that the two-dimensional black hole coupled to a massive, linear dilaton admits {\\it no small fluctuations at all}. We discuss possible implications of our results for the Callan-Giddings-Harvey-Strominger black hole.

  19. Heterostructures and quantum devices

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  20. Three-particle annihilation in a 2D heterostructure revealed through data-hypercubic photoresponse microscopy (Conference Presentation)

    Gabor, Nathaniel M.

    2017-05-01

    Van de Waals (vdW) heterostructures - which consist of precisely assembled atomically thin electronic materials - exhibit unusual quantum behavior. These quantum materials-by-design are of fundamental interest in basic scientific research and hold tremendous potential in advanced technological applications. Problematically, the fundamental optoelectronic response in these heterostructures is difficult to access using the standard techniques within the traditions of materials science and condensed matter physics. In the standard approach, characterization is based on the measurement of a small amount of one-dimensional data, which is used to gain a precise picture of the material properties of the sample. However, these techniques are fundamentally lacking in describing the complex interdependency of experimental degrees of freedom in vdW heterostructures. In this talk, I will present our recent experiments that utilize a highly data-intensive approach to gain deep understanding of the infrared photoresponse in vdW heterostructure photodetectors. These measurements, which combine state-of-the-art data analytics and measurement design with fundamentally new device structures and experimental parameters, give a clear picture of electron-hole pair interactions at ultrafast time scales.

  1. Numerical methods for semiconductor heterostructures with band nonparabolicity

    Wang Weichung; Hwang Tsungmin; Lin Wenwei; Liu Jinnliang

    2003-01-01

    This article presents numerical methods for computing bound state energies and associated wave functions of three-dimensional semiconductor heterostructures with special interest in the numerical treatment of the effect of band nonparabolicity. A nonuniform finite difference method is presented to approximate a model of a cylindrical-shaped semiconductor quantum dot embedded in another semiconductor matrix. A matrix reduction method is then proposed to dramatically reduce huge eigenvalue systems to relatively very small subsystems. Moreover, the nonparabolic band structure results in a cubic type of nonlinear eigenvalue problems for which a cubic Jacobi-Davidson method with an explicit nonequivalence deflation method are proposed to compute all the desired eigenpairs. Numerical results are given to illustrate the spectrum of energy levels and the corresponding wave functions in rather detail

  2. Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

    Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

    2018-04-01

    Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

  3. Creating Two-Dimensional Electron Gas in Nonpolar/Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure.

    Nazir, Safdar; Cheng, Jianli; Yang, Kesong

    2016-01-13

    We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO HS-based slab systems, i.e., TiO2/CaO and SrO/ZrO2 interface models with CaO and ZrO2 surface terminations in each model separately, we found that the lattice-mismatch-induced compressive strain leads to a strong polarization in the CZO film and that as the CZO film thickness increases there exists an insulator-to-metal transition. The polarization direction and critical thickness of the CZO film for forming interfacial metallic states depend on the surface termination of CZO film in both types of interface models. In the TiO2/CaO and SrO/ZrO2 interface models with CaO surface termination, the strong polarization drives the charge transfer from the CZO film to the first few TiO2 layers in the STO substrate, leading to the formation of two-dimensional electron gas (2DEG) at the interface. In the HS models with ZrO2 surface termination, two polarization domains with opposite directions are in the CZO film, which results in the charge transfer from the middle CZO layer to the interface and surface, respectively, leading to the coexistence of the 2DEG on the interface and the two-dimensional hole gas (2DHG) at the middle CZO layer. These findings open a new avenue to achieve 2DEG (2DHG) in perovskite-based HS systems via polarization discontinuity.

  4. Six-dimensional real and reciprocal space small-angle X-ray scattering tomography.

    Schaff, Florian; Bech, Martin; Zaslansky, Paul; Jud, Christoph; Liebi, Marianne; Guizar-Sicairos, Manuel; Pfeiffer, Franz

    2015-11-19

    When used in combination with raster scanning, small-angle X-ray scattering (SAXS) has proven to be a valuable imaging technique of the nanoscale, for example of bone, teeth and brain matter. Although two-dimensional projection imaging has been used to characterize various materials successfully, its three-dimensional extension, SAXS computed tomography, poses substantial challenges, which have yet to be overcome. Previous work using SAXS computed tomography was unable to preserve oriented SAXS signals during reconstruction. Here we present a solution to this problem and obtain a complete SAXS computed tomography, which preserves oriented scattering information. By introducing virtual tomography axes, we take advantage of the two-dimensional SAXS information recorded on an area detector and use it to reconstruct the full three-dimensional scattering distribution in reciprocal space for each voxel of the three-dimensional object in real space. The presented method could be of interest for a combined six-dimensional real and reciprocal space characterization of mesoscopic materials with hierarchically structured features with length scales ranging from a few nanometres to a few millimetres--for example, biomaterials such as bone or teeth, or functional materials such as fuel-cell or battery components.

  5. Thermal response in van der Waals heterostructures

    Gandi, Appala

    2016-11-21

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation. © 2016 IOP Publishing Ltd.

  6. Superconducting cuprate heterostructures for hot electron bolometers

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  7. Superconducting cuprate heterostructures for hot electron bolometers

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-01-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La 2−x Sr x CuO 4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI 3 , with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g e−ph ≈1 W/K cm 2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity

  8. Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy.

    Jung, Suyong; Park, Minkyu; Park, Jaesung; Jeong, Tae-Young; Kim, Ho-Jong; Watanabe, Kenji; Taniguchi, Takashi; Ha, Dong Han; Hwang, Chanyong; Kim, Yong-Sung

    2015-11-13

    Inelastic electron tunneling spectroscopy is a powerful technique for investigating lattice dynamics of nanoscale systems including graphene and small molecules, but establishing a stable tunnel junction is considered as a major hurdle in expanding the scope of tunneling experiments. Hexagonal boron nitride is a pivotal component in two-dimensional Van der Waals heterostructures as a high-quality insulating material due to its large energy gap and chemical-mechanical stability. Here we present planar graphene/h-BN-heterostructure tunneling devices utilizing thin h-BN as a tunneling insulator. With much improved h-BN-tunneling-junction stability, we are able to probe all possible phonon modes of h-BN and graphite/graphene at Γ and K high symmetry points by inelastic tunneling spectroscopy. Additionally, we observe that low-frequency out-of-plane vibrations of h-BN and graphene lattices are significantly modified at heterostructure interfaces. Equipped with an external back gate, we can also detect high-order coupling phenomena between phonons and plasmons, demonstrating that h-BN-based tunneling device is a wonderful playground for investigating electron-phonon couplings in low-dimensional systems.

  9. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    Li, Henan; Li, Peng; Huang, Jing Kai; Li, Ming-yang; Yang, Chih-Wen; Shi, Yumeng; Zhang, Xixiang; Li, Lain-Jong

    2016-01-01

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer

  10. Dose evaluation of three-dimensional small animal phantom with film dosimetry

    Han, Su Chul; Park, Seung Woo

    2017-01-01

    The weight of small animal dosimetry has been continuously increased in pre-clinical studies using radiation in small animals. In this study, three-dimensional(3D) small animal phantom was fabricated using 3D printer which has been continuously used and studied in the various fields. The absorbed dose of 3D animal phantom was evaluated by film dosimetry. Previously, the response of film was obtained from the materials used for production of 3D small animal phantom and compared with the bolus used as the tissue equivalent material in the radiotherapy. When irradiated with gamma rays from 0.5 Gy to 6 Gy, it was confirmed that there was a small difference of less than 1% except 0.5 Gy dose. And when small animal phantom was irradiated with 5 Gy, the difference between the irradiated dose and calculated dose from film was within 2%. Based on this study, it would be possible to increase the reliability of dose in pre-clinical studies using irradiation in small animals by evaluating dose of 3D small animal phantom

  11. Dose evaluation of three-dimensional small animal phantom with film dosimetry

    Han, Su Chul [Div. of Medical Radiation Equipment, Korea Institute of Radiological and Medical Sciences, Seoul (Korea, Republic of); Park, Seung Woo [Radilogcial and Medico-Oncological Sciences, University of Sciences and Technology, Daejeon (Korea, Republic of)

    2017-03-15

    The weight of small animal dosimetry has been continuously increased in pre-clinical studies using radiation in small animals. In this study, three-dimensional(3D) small animal phantom was fabricated using 3D printer which has been continuously used and studied in the various fields. The absorbed dose of 3D animal phantom was evaluated by film dosimetry. Previously, the response of film was obtained from the materials used for production of 3D small animal phantom and compared with the bolus used as the tissue equivalent material in the radiotherapy. When irradiated with gamma rays from 0.5 Gy to 6 Gy, it was confirmed that there was a small difference of less than 1% except 0.5 Gy dose. And when small animal phantom was irradiated with 5 Gy, the difference between the irradiated dose and calculated dose from film was within 2%. Based on this study, it would be possible to increase the reliability of dose in pre-clinical studies using irradiation in small animals by evaluating dose of 3D small animal phantom.

  12. In-plane heterostructures of Sb/Bi with high carrier mobility

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  13. Electronic properties of semiconductor heterostructures

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  14. Three-dimensional magnetic nanoparticle imaging using small field gradient and multiple pickup coils

    Sasayama, Teruyoshi, E-mail: sasayama@sc.kyushu-u.ac.jp; Tsujita, Yuya; Morishita, Manabu; Muta, Masahiro; Yoshida, Takashi; Enpuku, Keiji

    2017-04-01

    We propose a magnetic particle imaging (MPI) method based on third harmonic signal detection using a small field gradient and multiple pickup coils. First, we developed a system using two pickup coils and performed three-dimensional detection of two magnetic nanoparticle (MNP) samples, which were spaced 15 mm apart. In the experiments, an excitation field strength of 1.6 mT was used at an operating frequency of 3 kHz. A DC gradient field with a typical value of 0.2 T/m was also used to produce the so-called field-free line. A third harmonic signal generated by the MNP samples was detected using the two pickup coils, and the samples were then mechanically scanned to obtain field maps. The field maps were subsequently analyzed using the nonnegative least squares method to obtain three-dimensional position information for the MNP samples. The results show that the positions of the two MNP samples were estimated with good accuracy, despite the small field gradient used. Further improvement in MPI performance will be achieved by increasing the number of pickup coils used. - Highlights: • 3D magnetic particle imaging system combining field-free line and two pickup coils. • Imaging method based on third harmonic signal detection and small field gradient. • Nonnegative least squares method for 3D magnetic nanoparticle image reconstruction. • High spatial resolution despite use of small field gradient.

  15. Source Distribution Method for Unsteady One-Dimensional Flows With Small Mass, Momentum, and Heat Addition and Small Area Variation

    Mirels, Harold

    1959-01-01

    A source distribution method is presented for obtaining flow perturbations due to small unsteady area variations, mass, momentum, and heat additions in a basic uniform (or piecewise uniform) one-dimensional flow. First, the perturbations due to an elemental area variation, mass, momentum, and heat addition are found. The general solution is then represented by a spatial and temporal distribution of these elemental (source) solutions. Emphasis is placed on discussing the physical nature of the flow phenomena. The method is illustrated by several examples. These include the determination of perturbations in basic flows consisting of (1) a shock propagating through a nonuniform tube, (2) a constant-velocity piston driving a shock, (3) ideal shock-tube flows, and (4) deflagrations initiated at a closed end. The method is particularly applicable for finding the perturbations due to relatively thin wall boundary layers.

  16. Follow-up on Small Abdominal Aortic Aneurysms Using Three Dimensional Ultrasound

    Ghulam, Q. M.; Bredahl, K. K.; Lönn, L.

    2017-01-01

    Objectives Rupture risk in abdominal aortic aneurysms (AAAs) is assessed using AAA diameter; yet 10% of ruptures occur in a small aneurysm. This underlines the inadequacy of diameter as a standalone parameter. In this prospective follow-up study, ultrasound determined aneurysm diameter was compared...... with aneurysm volume determined by three dimensional ultrasound (3D-US) in a group of 179 AAAs. Design This was a prospective cohort study with repeated diameter and volume measurements by 3D-US. Material and methods In total, 179 patients with small infrarenal AAAs (diameter 30–55 mm) were enrolled......L) were recorded. In post-hoc analysis, it was found that more AAAs with a stable diameter and a growing volume than AAAs with a stable diameter and volume were undergoing aortic repair during follow-up, based on the maximum diameter. Conclusion In this cohort of small AAAs, 40% of patients with a stable...

  17. Proximity effects in topological insulator heterostructures

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  18. Tunable intraparticle frameworks for creating complex heterostructured nanoparticle libraries

    Fenton, Julie L.; Steimle, Benjamin C.; Schaak, Raymond E.

    2018-05-01

    Complex heterostructured nanoparticles with precisely defined materials and interfaces are important for many applications. However, rationally incorporating such features into nanoparticles with rigorous morphology control remains a synthetic bottleneck. We define a modular divergent synthesis strategy that progressively transforms simple nanoparticle synthons into increasingly sophisticated products. We introduce a series of tunable interfaces into zero-, one-, and two-dimensional copper sulfide nanoparticles using cation exchange reactions. Subsequent manipulation of these intraparticle frameworks yielded a library of 47 distinct heterostructured metal sulfide derivatives, including particles that contain asymmetric, patchy, porous, and sculpted nanoarchitectures. This generalizable mix-and-match strategy provides predictable retrosynthetic pathways to complex nanoparticle features that are otherwise inaccessible.

  19. A three-dimensional tetrahedral-shaped conjugated small molecule for organic solar cells

    QIN Yang

    2014-04-01

    Full Text Available We report the synthesis of a novel three-dimensional tetrahedral-shaped small molecule,SO,containing a tetraphenylsilane core and cyanoester functionalized terthiophene arms.A deep lying HOMO energy level of -5.3 eV and a narrow bandgap of 1.9 eV were obtained from cyclic voltammetry measurements.Absorption,X-ray scattering and differential scanning calorimetry experiments all indicate high crystallinity of this compound.Solar cells employing SO were fabricated and evaluated.The relatively low performance was mainly ascribed to lack of appreciable phase separation,which is confirmed by optical microscopy.

  20. Charge transport, interfacial interactions and synergistic mechanisms in BiNbO4/MWO4 (M = Zn and Cd) heterostructures for hydrogen production: insights from a DFT+U study

    Opoku, F

    2017-10-01

    Full Text Available the heterostructures useful in hydrogen production. The relatively low ionisation energy and electron affinity for the heterostructures compared to the monolayers make them ideal for photocatalysis applications due to their small energy barrier for the injection...

  1. Fabrication and assembly of two-dimensional TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures with type II band alignment for enhanced photocatalytic performance

    Xu, Tao [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China); Wang, Yun, E-mail: yun.wang@griffith.edu.au [Centre for Clean Environment and Energy and Griffith School of Environment, Griffith University, Gold Coast, QLD, 4222 (Australia); Zhou, Xiaofang; Zheng, Xiaoli [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China); Xu, Qun, E-mail: qunxu@zzu.edu.cn [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China); Chen, Zhimin; Ren, Yumei; Yan, Bo [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China)

    2017-05-01

    Graphical abstract: 2D heterostructures of TiO{sub 2}/WO{sub 3}·H{sub 2}O nanosheets have been successfully fabricated with assistance of supercritical CO{sub 2} (SC CO{sub 2}). The formation of heterostructures is beneficial to effective separation of the electron-hole pairs, thus resulting in enhanced photocatalytic activity toward the high photocurrent under simulated solar light irradiation. - Highlights: • In this study we have successfully exfoliated ultrathin WO{sub 3}·H{sub 2}O nanosheets from tunsten acid(H{sub 2}WO{sub 4}) with supercritical CO{sub 2} (SC CO{sub 2}). • A novel type II 2D ultrathin TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures were fabricated with the assistance of SC CO{sub 2}. • The formation of TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures is beneficial to effective separation of the electron-hole pairs. • The photocurrent response and MO degradation of TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures exhibit significantly improvement. - Abstract: The recombination of photo-induced charges is one of the main issues to limit the large-scale applications in photocatalysis and photoelectrocatalysis. To improve the charge separation, we fabricate a novel type II 2D ultrathin TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures with the assistance of supercritical CO{sub 2} (SC CO{sub 2}) in this work. The as-fabricated heterostructures possess high photocatalytic activity for the degradation of methyl orange(MO) and high photocurrent response under simulated solar light (AM 1.5). For the TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures, the MO solution could be degraded by 95.5% in 150 min, and the photocurrent density reaches to 6.5 μA cm{sup −2}, exhibiting a significant enhancement compared with pure TiO{sub 2} and WO{sub 3}·H{sub 2}O nanosheets.

  2. DFT investigation on two-dimensional GeS/WS2 van der Waals heterostructure for direct Z-scheme photocatalytic overall water splitting

    Ju, Lin; Dai, Ying; Wei, Wei; Li, Mengmeng; Huang, Baibiao

    2018-03-01

    Recently, extensive attention has been paid to the direct Z-scheme systems for photocatalytic water splitting where carriers migrate directly between the two semiconductors without a redox mediator. In the present work, the electronic structure and related properties of two-dimensional (2D) van de Waals (vdW) GeS/WX2 (X = O, S, Se, Te) heterojunction are systematically investigated by first-principles calculations. Our results demonstrate that, the GeS/WS2 heterojunction could form a direct Z-scheme system for photocatalytic water splitting, whereas the GeS/WX2 (X = O, Se, Te) can't, because of their respective unsuitable electronic structures. For the GeS/WS2 heterojunction, the GeS and WS2 monolayers serve as photocatalysts for the hydrogen evolution reactionand oxygen evolution reaction, respectively. The internal electric field induced by the electron transfer at the interface can promote the separation of photo-generated charge carriers and formation of the interface Z-scheme electron transfer. Remarkably, the designed GeS/WS2 heterojunction not only enhances the hydrogen production activity of GeS and the oxygen production ability of WS2 but also improves the light absorption of the two monolayers by reducing the band gaps. Moreover, it is found that narrowing the interlayer distance could enhance the internal electric field, improving the photocatalytic ability of the vdW heterojunction. This work provides fundamental insights for further design and preparation of emergent metal dichalcogenide catalysts, beneficial for the development in clean energy.

  3. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  4. [Construction of 2-dimensional tumor microvascular architecture phenotype in non-small cell lung cancer].

    Liu, Jin-kang; Wang, Xiao-yi; Xiong, Zeng; Zhou, Hui; Zhou, Jian-hua; Fu, Chun-yan; Li, Bo

    2008-08-01

    To construct a technological platform of 2-dimensional tumor microvascular architecture phenotype (2D-TAMP) expression. Thirty samples of non-small cell lung cancer (NSCLC) were collected after surgery. The corresponding sections of tumor tissue specimens to the slice of CT perfusion imaging were selected. Immunohistochemical staining,Gomori methenamine silver stain, and electron microscope observation were performed to build a technological platform of 2D-TMAP expression by detecting the morphology and the integrity of basement membrane of microvasculature, microvascular density, various microvascular subtype, the degree of the maturity and lumenization of microvasculature, and the characteristics of immunogenetics of microvasculature. The technological platform of 2D-TMAP expression was constructed successfully. There was heterogeneity in 2D-TMAP expression of non-small cell lung cancer. The microvascular of NSCLC had certain characteristics. 2D-TMAP is a key technology that can be used to observe the overall state of micro-environment in tumor growth.

  5. 3D Tree Dimensionality Assessment Using Photogrammetry and Small Unmanned Aerial Vehicles.

    Gatziolis, Demetrios; Lienard, Jean F; Vogs, Andre; Strigul, Nikolay S

    2015-01-01

    Detailed, precise, three-dimensional (3D) representations of individual trees are a prerequisite for an accurate assessment of tree competition, growth, and morphological plasticity. Until recently, our ability to measure the dimensionality, spatial arrangement, shape of trees, and shape of tree components with precision has been constrained by technological and logistical limitations and cost. Traditional methods of forest biometrics provide only partial measurements and are labor intensive. Active remote technologies such as LiDAR operated from airborne platforms provide only partial crown reconstructions. The use of terrestrial LiDAR is laborious, has portability limitations and high cost. In this work we capitalized on recent improvements in the capabilities and availability of small unmanned aerial vehicles (UAVs), light and inexpensive cameras, and developed an affordable method for obtaining precise and comprehensive 3D models of trees and small groups of trees. The method employs slow-moving UAVs that acquire images along predefined trajectories near and around targeted trees, and computer vision-based approaches that process the images to obtain detailed tree reconstructions. After we confirmed the potential of the methodology via simulation we evaluated several UAV platforms, strategies for image acquisition, and image processing algorithms. We present an original, step-by-step workflow which utilizes open source programs and original software. We anticipate that future development and applications of our method will improve our understanding of forest self-organization emerging from the competition among trees, and will lead to a refined generation of individual-tree-based forest models.

  6. Spin Transport in Semiconductor heterostructures

    Marinescu, Domnita Catalina

    2011-01-01

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  7. Therapeutic effect analysis of three dimensional conformal radiotherapy non-small cell lung cancer

    Yao Zhijun; Cao Yongzhen; Zhang Wenxue; Liang Feng

    2012-01-01

    Objective: To analyse the treatment effect of non-small cell lung cancer of three dimensional conformal radiotherapy (3D-CRT) and to study the effect of patient survival related factors. Methods: Retrospective analysis was mack for 136 cases of non-small cell lung cancer, all accept 3D-CRT, through the case data collection and long-term follow-up, using the single factor and multiple factor analysis survival time and its influencing factors. Results: The recent curative effects of 136 cases of patients with three dimensional conformal radiotherapy: Complete response (CR) 14.7% (20/136), partial response (PR) 60.3 (82/136), stable disease(SD) 19.9% (27/136), progression disease (PD) 5.1% (7/136), total effective rate is 75% (102/136). One, two, three, five year survival rate is 79.4%, 45.4%, 22.1%, 12.5%. Side effects: Class 1 radiated esophagitis 35 cases, Class 2 radiated esophagitis 16 cases, Class 3 and above radiated esophagitis 0 case. Class I radiated pneumonia 20 cases, Class 2 radiated pneumonia 9 cases, Class 3 radiated pneumonia 0 case. Single factor analysis shows the influence of gender, age, pathology, phase, dose, and first-phase curative effect to the survival time are of a statistical significance, Multiple factor analysis showed KPS score, phase, dose, first-phase curative effect are the survival time independent factors. Conclusion: 3D-CRT for patients with non-small cell lung carcinoma is a safe, effective treatment method, Side effects are relatively low, and the patients survival time is long after radiotherapy. (authors)

  8. Three dimensional dose verification for clinical treatments of small intracranial tumours

    Taylor, M.L.; Dunn, L.; Kairn, L.; Jenny, J.; Knight, R.; Trapp, J.; Smith, R.; Ackerly, T.

    2010-01-01

    Full text: Cancers of the brain and central nervous system account for 1.6% of new cancers and 1.8% of cancer deaths globally. The highest rates of all developed nations are observed in Australia and New Zealand. There are known complexities associated with dose measurement of very small radiation fields. Here, 3D dosimetric verification of treatments for small intracranial tumours using gel dosimetry was investigated. An anthropomorphic head phantom with a 43 mm diameter and 63 mm long gel container was filled with PAGAT normoxic radiosensitive gel. In this work, we show results for a 12-field stereotactic radiotherapy treatment delivered using a Varian 21EX with BrainLAB mini-multi leaf collimator. The gel was read out using an Octopus-1Q laser optical CT scanner. Generally good agreement was observed between the measured doses and those calculated with the iPlan treatment planning system (pencil beam convolution); see Fig. I. For gamma criteria of 5%/5 mm the percentage of gamma values less than unity was 95% above the 80% isodose line, indicating good PTV coverage. For lower isodose regions approaching the boundaries of the container poorer agreement was observed. The feasibility of three-dimensional measurement of small field dose distributions in clinical contexts has been demonstrated. Development of this methodology has the potential to overcome many shortcomings of other dosimetric methods, such as limitations of spatial information (typically one- and two-dimensions), volume-averaging effects and perturbation due to poor mediamatching. (author)

  9. Future applications of heterostructures

    König, Ulf

    1996-01-01

    In this review the status and future of heterostructure devices is discussed. The author concentrates on III/V and Si/SiGe. Performance and applications are folded to the data and expectations of the micro- and opto-electronic market and to the traditional Si-mainstream. New trends, i.e. the SIA-roadmap, are checked how heterodevices can fit in. Only the most attractive candidates for applications are considered, i.e. the heterobipolar-, the hetero field effect-transistors, the resonant tunnel diode and to a less extent, some optoelectronic devices. Considered figures of merit are frequencies, transconductance, noise at high and low frequencies, threshold voltage, power delay, threshold current and quantum efficiencies. It is pointed out how to optimize those by material and design. Extrapolations to the future potential of heterodevices are made, just taking the claimed scaling of lateral dimensions into consideration. Field of applications are presented, where heterodevices offer exclusive qualities, i.e. high frequency transmission and sensors, and new mixed systems. In the case of logic the trend goes to nanoscaled devices and ICs targeting nanoelectronics beyond traditional electronics. Heterostructure layers allow a vertical nanoscaling and thus give an additional degree of freedom for designing and optimation. It is an attractive challenge for scientists and engineers to solve the related technological problems like thin, low thermal budget oxides, like defect free buffer layers etc. Special attention is put on Si/SiGe, which is now on an upswing in electronics and photonics.

  10. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  11. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-01-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  12. Micro injection moulding process optimization of an ultra-small POM three-dimensional component

    Baruffi, Federico; Calaon, Matteo; Tosello, Guido

    Replication-based manufacturing processes are a cost effective method for producing complex and net-shaped components [1]. Micro injection moulding has a prominent place among them for its capability of accurately and precisely produce micro plastic parts in large production scale [2], [3......]. In this study, the optimization of the micro injection moulding process of an ultra-small (volume: 0.07 mm3; mass: 0.1 mg) three-dimensional Polyoxymethylene (POM) micro component for medical applications (see Figure 1) is presented. Preliminary experiments highlighted the need for venting channels in order...... with respect to design specifications, the flash areal size was utilized as quality indicator. A design of the experiments approach was carried out in order to study the effects of melt temperature, mould temperature, holding pressure and injection speed. For this task, a two-level full factorial design...

  13. 3D Tree Dimensionality Assessment Using Photogrammetry and Small Unmanned Aerial Vehicles.

    Demetrios Gatziolis

    Full Text Available Detailed, precise, three-dimensional (3D representations of individual trees are a prerequisite for an accurate assessment of tree competition, growth, and morphological plasticity. Until recently, our ability to measure the dimensionality, spatial arrangement, shape of trees, and shape of tree components with precision has been constrained by technological and logistical limitations and cost. Traditional methods of forest biometrics provide only partial measurements and are labor intensive. Active remote technologies such as LiDAR operated from airborne platforms provide only partial crown reconstructions. The use of terrestrial LiDAR is laborious, has portability limitations and high cost. In this work we capitalized on recent improvements in the capabilities and availability of small unmanned aerial vehicles (UAVs, light and inexpensive cameras, and developed an affordable method for obtaining precise and comprehensive 3D models of trees and small groups of trees. The method employs slow-moving UAVs that acquire images along predefined trajectories near and around targeted trees, and computer vision-based approaches that process the images to obtain detailed tree reconstructions. After we confirmed the potential of the methodology via simulation we evaluated several UAV platforms, strategies for image acquisition, and image processing algorithms. We present an original, step-by-step workflow which utilizes open source programs and original software. We anticipate that future development and applications of our method will improve our understanding of forest self-organization emerging from the competition among trees, and will lead to a refined generation of individual-tree-based forest models.

  14. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  15. Interface-engineered oxygen octahedral coupling in manganite heterostructures

    Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

    2017-12-01

    Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

  16. The hot pick-up technique for batch assembly of van der Waals heterostructures

    Pizzocchero, Filippo; Gammelgaard, Lene; Jessen, Bjarke Sørensen

    2016-01-01

    The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces...... between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron...

  17. Three-dimensional tracking of small aquatic organisms using fluorescent nanoparticles.

    Mikael T Ekvall

    Full Text Available Tracking techniques are vital for the understanding of the biology and ecology of organisms. While such techniques have provided important information on the movement and migration of large animals, such as mammals and birds, scientific advances in understanding the individual behaviour and interactions of small (mm-scale organisms have been hampered by constraints, such as the sizes of existing tracking devices, in existing tracking methods. By combining biology, chemistry and physics we here present a method that allows three-dimensional (3D tracking of individual mm-sized aquatic organisms. The method is based on in-vivo labelling of the organisms with fluorescent nanoparticles, so-called quantum dots, and tracking of the organisms in 3D via the quantum-dot fluorescence using a synchronized multiple camera system. It allows for the efficient and simultaneous study of the behaviour of one as well as multiple individuals in large volumes of observation, thus enabling the study of behavioural interactions at the community scale. The method is non-perturbing - we demonstrate that the labelling is not affecting the behavioural response of the organisms - and is applicable over a wide range of taxa, including cladocerans as well as insects, suggesting that our methodological concept opens up for new research fields on individual behaviour of small animals. Hence, this offers opportunities to focus on important biological, ecological and behavioural questions never before possible to address.

  18. Three-dimensional tracking of small aquatic organisms using fluorescent nanoparticles.

    Ekvall, Mikael T; Bianco, Giuseppe; Linse, Sara; Linke, Heiner; Bäckman, Johan; Hansson, Lars-Anders

    2013-01-01

    Tracking techniques are vital for the understanding of the biology and ecology of organisms. While such techniques have provided important information on the movement and migration of large animals, such as mammals and birds, scientific advances in understanding the individual behaviour and interactions of small (mm-scale) organisms have been hampered by constraints, such as the sizes of existing tracking devices, in existing tracking methods. By combining biology, chemistry and physics we here present a method that allows three-dimensional (3D) tracking of individual mm-sized aquatic organisms. The method is based on in-vivo labelling of the organisms with fluorescent nanoparticles, so-called quantum dots, and tracking of the organisms in 3D via the quantum-dot fluorescence using a synchronized multiple camera system. It allows for the efficient and simultaneous study of the behaviour of one as well as multiple individuals in large volumes of observation, thus enabling the study of behavioural interactions at the community scale. The method is non-perturbing - we demonstrate that the labelling is not affecting the behavioural response of the organisms - and is applicable over a wide range of taxa, including cladocerans as well as insects, suggesting that our methodological concept opens up for new research fields on individual behaviour of small animals. Hence, this offers opportunities to focus on important biological, ecological and behavioural questions never before possible to address.

  19. Small Artery Elastin Distribution and Architecture-Focus on Three Dimensional Organization.

    Hill, Michael A; Nourian, Zahra; Ho, I-Lin; Clifford, Philip S; Martinez-Lemus, Luis; Meininger, Gerald A

    2016-11-01

    The distribution of ECM proteins within the walls of resistance vessels is complex both in variety of proteins and structural arrangement. In particular, elastin exists as discrete fibers varying in orientation across the adventitia and media as well as often resembling a sheet-like structure in the case of the IEL. Adding to the complexity is the tissue heterogeneity that exists in these structural arrangements. For example, small intracranial cerebral arteries lack adventitial elastin while similar sized arteries from skeletal muscle and intestinal mesentery exhibit a complex adventitial network of elastin fibers. With regard to the IEL, several vascular beds exhibit an elastin sheet with punctate holes/fenestrae while in others the IEL is discontinuous and fibrous in appearance. Importantly, these structural patterns likely sub-serve specific functional properties, including mechanosensing, control of external forces, mechanical properties of the vascular wall, cellular positioning, and communication between cells. Of further significance, these processes are altered in vascular disorders such as hypertension and diabetes mellitus where there is modification of ECM. This brief report focuses on the three-dimensional wall structure of small arteries and considers possible implications with regard to mechanosensing under physiological and pathophysiological conditions. © 2016 John Wiley & Sons Ltd.

  20. Multi-SOM: an Algorithm for High-Dimensional, Small Size Datasets

    Shen Lu

    2013-04-01

    Full Text Available Since it takes time to do experiments in bioinformatics, biological datasets are sometimes small but with high dimensionality. From probability theory, in order to discover knowledge from a set of data, we have to have a sufficient number of samples. Otherwise, the error bounds can become too large to be useful. For the SOM (Self- Organizing Map algorithm, the initial map is based on the training data. In order to avoid the bias caused by the insufficient training data, in this paper we present an algorithm, called Multi-SOM. Multi-SOM builds a number of small self-organizing maps, instead of just one big map. Bayesian decision theory is used to make the final decision among similar neurons on different maps. In this way, we can better ensure that we can get a real random initial weight vector set, the map size is less of consideration and errors tend to average out. In our experiments as applied to microarray datasets which are highly intense data composed of genetic related information, the precision of Multi-SOMs is 10.58% greater than SOMs, and its recall is 11.07% greater than SOMs. Thus, the Multi-SOMs algorithm is practical.

  1. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-05-09

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  2. Promising survival with three-dimensional conformal radiation therapy for non-small cell lung cancer

    Armstrong, John; Raben, Adam; Zelefsky, Michael; Burt, Michael; Leibel, Steve; Burman, Chandra; Kutcher, Gerard; Harrison, Louis; Hahn, Cathy; Ginsberg, Robert; Rusch, Valerie; Kris, Mark; Fuks, Zvi

    1997-01-01

    Purpose: Local failure is a major obstacle to the cure of locally advanced non small-cell lung cancer. Three-dimensional conformal radiation therapy (3-DCRT) selects optimal treatment parameters to increase dose to tumor and reduce normal tissue dose, potentially representing an enhancement of the therapeutic ratio of radiation therapy for lung cancer. We performed this analysis of 45 non-small cell lung cancer patients treated with 3-DCRT alone, to evaluate the ability of computer derived lung dose volume histograms to predict serious pulmonary toxicity, to assess the feasibility of this approach, and to examine the resulting survival. Methods: There were 28 males (62%) and 17 females (38%). The median age was 65 (range: 38-82). Tumor stage was Stage I/II in 13%, IIIa in 42%, and IIIb in 44%. The histology was squamous in 44%, adenocarcinoma in 36%, and other non-small cell histologies in the others. Only 47% of patients. had combined favorable prognostic factors (i.e. KPS ≤ 80, and ≤5% wt. loss). The median dose of radiation to gross disease was 70.2 Gy (range: 52.2-72 Gy) delivered in fractions of 1.8 Gy, 5 days per week. Results: Seven patients did not complete 3-DCRT due to disease progression outside the port. Follow-up data are mature: the median follow up of the 6 survivors is 43.5 months (35-59). Thoracic progression occurred in 46%. Median survival (all 45 patients.) is 15.7 months and survival is 32% at 2 years and 12% at 59 months. Pulmonary toxicity ≥grade 3 occurred in 9% of patients. Dose volume histograms were available in 31 patients and showed a correlation between risk of pulmonary toxicity and indices of dose to lung parenchyma. Grade 3 or higher pulmonary toxicity occurred in 38% ((3(8))) of patients with >30% of lung volume receiving ≥25 Gy, versus 4% ((1(23))) of patients with ≤30% lung receiving ≥25 Gy (P = 0.04). Grade 3 or higher pulmonary toxicity occurred in 29% ((4(14))) of patients with a predicted pulmonary normal tissue

  3. Statistical investigation of avalanches of three-dimensional small-world networks and their boundary and bulk cross-sections

    Najafi, M. N.; Dashti-Naserabadi, H.

    2018-03-01

    In many situations we are interested in the propagation of energy in some portions of a three-dimensional system with dilute long-range links. In this paper, a sandpile model is defined on the three-dimensional small-world network with real dissipative boundaries and the energy propagation is studied in three dimensions as well as the two-dimensional cross-sections. Two types of cross-sections are defined in the system, one in the bulk and another in the system boundary. The motivation of this is to make clear how the statistics of the avalanches in the bulk cross-section tend to the statistics of the dissipative avalanches, defined in the boundaries as the concentration of long-range links (α ) increases. This trend is numerically shown to be a power law in a manner described in the paper. Two regimes of α are considered in this work. For sufficiently small α s the dominant behavior of the system is just like that of the regular BTW, whereas for the intermediate values the behavior is nontrivial with some exponents that are reported in the paper. It is shown that the spatial extent up to which the statistics is similar to the regular BTW model scales with α just like the dissipative BTW model with the dissipation factor (mass in the corresponding ghost model) m2˜α for the three-dimensional system as well as its two-dimensional cross-sections.

  4. Three-dimensional shape transformations of hydrogel sheets induced by small-scale modulation of internal stresses

    Wu, Zi Liang; Moshe, Michael; Greener, Jesse; Therien-Aubin, Heloise; Nie, Zhihong; Sharon, Eran; Kumacheva, Eugenia

    2013-03-01

    Although Nature has always been a common source of inspiration in the development of artificial materials, only recently has the ability of man-made materials to produce complex three-dimensional (3D) structures from two-dimensional sheets been explored. Here we present a new approach to the self-shaping of soft matter that mimics fibrous plant tissues by exploiting small-scale variations in the internal stresses to form three-dimensional morphologies. We design single-layer hydrogel sheets with chemically distinct, fibre-like regions that exhibit differential shrinkage and elastic moduli under the application of external stimulus. Using a planar-to-helical three-dimensional shape transformation as an example, we explore the relation between the internal architecture of the sheets and their transition to cylindrical and conical helices with specific structural characteristics. The ability to engineer multiple three-dimensional shape transformations determined by small-scale patterns in a hydrogel sheet represents a promising step in the development of programmable soft matter.

  5. Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

    Khan, Salahuddin; Jayabalan, J., E-mail: jjaya@rrcat.gov.in; Singh, Asha; Yogi, Rachana; Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2015-09-21

    We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.

  6. Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

    Khan, Salahuddin; Jayabalan, J.; Singh, Asha; Yogi, Rachana; Chari, Rama

    2015-01-01

    We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths

  7. Preliminary results of three-dimensional conformal radiotherapy for non-small cell lung cancer

    Wang Yingjie; Wang Luhua; Wang Xin; Feng Qinfu; Zhang Hongxing; Xiao Zefen; Yin Weibo

    2005-01-01

    Objective: To evaluate the therapeutic effects and complications of three-dimensional conformal radiotherapy (3DCRT) for non-small cell lung cancer (NSCLC). Methods: Between March 1999 and September 2003, 91 NSCLC patients treated with 3DCRT were reviewed at the Cancer Hospital, Chinese Academy of Medical Sciences. This patient cohort consisted of 73 men and 18 women. The median age was 66 years. Radio-therapy was delivered at 2 Gy fraction, 5 fractions per week. The median total dose was 60 Gy. Results: With a median follow-up time of 17 months, the response rate after 3DCRT was 57.1%, with complete remission 11.0% (10/91) and partial remission 46.2%(42/91). The median survival time (MST) was 16 months, with 1- and 2- year overall survivals (OS) of 67.0% and 32.6%, 1- and 2-year local progression free survivals (LPFS) of 82.6% and 53.0%, respectively. The independent adverse prognostic factors by univariate analysis and multivariate analysis was weight loss ≥5%. Grade 2 acute radiation pneumonitis was observed in 2 patients and grade 3 in 4 patients. Late lung injury developed in 1 patient with grade 2, 1 patient with grade 3, respectively. Acute radiation esophagitis was observed in 8 patients with grade 2. Acute grade 2 hematologic toxicity developed in 5 patients. Conclusions: 3DCRT was feasible in the treatment of NSCLC with good immediate tumor response and acceptable normal tissue complication. The total dose may potentially be increased. (authors)

  8. Heterostructures of transition metal dichalcogenides

    Amin, Bin

    2015-08-24

    The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshifts occur when the chalcogen atoms are exchanged along the series S-Se-Te. Strong absorption from infrared to visible light as well as excellent photocatalytic properties can be achieved.

  9. Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures

    Averin, S. V., E-mail: sva278@ire216.msk.su; Kuznetzov, P. I.; Zhitov, V. A.; Zakharov, L. Yu.; Kotov, V. M.; Alkeev, N. V. [Russian Academy of Sciences, Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics (Russian Federation); Gladisheva, N. B. [Pulsar State Plant (Russian Federation)

    2015-11-15

    The detecting properties of periodic heterostructures with ZnCdS quantum wells separated by ZnMgS or ZnS barrier layers are studied. Heterostructures are grown on semi-insulating GaP substrates by metal organic vapor-phase epitaxy (MOVPE). On their basis, metal–semiconductor–metal (MSM) diodes with interdigital Schottky contacts 3 μm, distances between them of 3 μm, and a total detector area of 100 × 100 μm are fabricated. The detectors have low dark currents (10{sup –12} A); at low bias voltages, they provide a narrow- band response (full-width at half-maximum of FWHM = 18 nm at a wavelength of 350 nm) which is controlled by the ZnCdS quantum-well composition. As bias is increased to 70 V, the maximum detector sensitivity shifts by a wavelength of 450 nm, which is caused by penetration of the external-bias electric field into the semi-insulating GaP substrate. In this case, the narrow-band response of the detector at a wavelength of 350 nm is retained, i.e., the two-color detection of light is provided.

  10. A small molecule-based strategy for endothelial differentiation and three-dimensional morphogenesis from human embryonic stem cells

    Geng, Yijie; Feng, Bradley

    2016-01-01

    The emerging models of human embryonic stem cell (hESC) self-organizing organoids provide a valuable in vitro platform for studying self-organizing processes that presumably mimic in vivo human developmental events. Here we report that through a chemical screen, we identified two novel and structurally similar small molecules BIR1 and BIR2 which robustly induced the self-organization of a balloon-shaped three-dimensional structure when applied to two-dimensional adherent hESC cultures in the ...

  11. Tunable emergent heterostructures in a prototypical correlated metal

    Fobes, D. M.; Zhang, S.; Lin, S.-Z.; Das, Pinaki; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Harriger, L. W.; Ehlers, G.; Podlesnyak, A.; Bewley, R. I.; Sazonov, A.; Hutanu, V.; Ronning, F.; Batista, C. D.; Janoschek, M.

    2018-05-01

    At the interface between two distinct materials, desirable properties, such as superconductivity, can be greatly enhanced1, or entirely new functionalities may emerge2. Similar to in artificially engineered heterostructures, clean functional interfaces alternatively exist in electronically textured bulk materials. Electronic textures emerge spontaneously due to competing atomic-scale interactions3, the control of which would enable a top-down approach for designing tunable intrinsic heterostructures. This is particularly attractive for correlated electron materials, where spontaneous heterostructures strongly affect the interplay between charge and spin degrees of freedom4. Here we report high-resolution neutron spectroscopy on the prototypical strongly correlated metal CeRhIn5, revealing competition between magnetic frustration and easy-axis anisotropy—a well-established mechanism for generating spontaneous superstructures5. Because the observed easy-axis anisotropy is field-induced and anomalously large, it can be controlled efficiently with small magnetic fields. The resulting field-controlled magnetic superstructure is closely tied to the formation of superconducting6 and electronic nematic textures7 in CeRhIn5, suggesting that in situ tunable heterostructures can be realized in correlated electron materials.

  12. Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

    Rooney, Aidan P; Kozikov, Aleksey; Rudenko, Alexander N; Prestat, Eric; Hamer, Matthew J; Withers, Freddie; Cao, Yang; Novoselov, Kostya S; Katsnelson, Mikhail I; Gorbachev, Roman; Haigh, Sarah J

    2017-09-13

    Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS 2 or WS 2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe 2 and WSe 2 , our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe 2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe 2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe 2 compared to processing in air.

  13. M = Mo, W; X = S, Se, Te) heterostructures

    Zhang, Qingyun

    2018-04-16

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  14. Spin-orbit controlled capacitance of a polar heterostructure

    Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

  15. Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

    Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

    2015-01-01

    We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

  16. Strong magnetization and Chern insulators in compressed graphene/CrI 3 van der Waals heterostructures

    Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Xue, Yang; Ma, Chunlan; Yang, Zhongqin

    2018-02-01

    Graphene-based heterostructures are a promising material system for designing the topologically nontrivial Chern insulating devices. Recently, a two-dimensional monolayer ferromagnetic insulator CrI3 was successfully synthesized in experiments [B. Huang et al., Nature (London) 546, 270 (2017), 10.1038/nature22391]. Here, these two interesting materials are proposed to build a heterostructure (Gr /CrI3). Our first-principles calculations show that the system forms a van der Waals (vdW) heterostructure, which is relatively facilely fabricated in experiments. A Chern insulating state is acquired in the Gr /CrI3 heterostructure if the vdW gap is compressed to a distance between about 3.3 and 2.4 Å, corresponding to a required external pressure between about 1.4 and 18.3 GPa. Amazingly, very strong magnetization (about 150 meV) is found in graphene, induced by the substrate CrI3, despite the vdW interactions between them. A low-energy effective model is employed to understand the mechanism. The work functions, contact types, and band alignments of the Gr /CrI3 heterostructure system are also studied. Our work demonstrates that the Gr /CrI3 heterostructure is a promising system to observe the quantum anomalous Hall effect at high temperatures (up to 45 K) in experiments.

  17. Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

    Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

    2018-06-01

    Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

  18. Escher-like quasiperiodic heterostructures

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L; Costa, A F

    2009-01-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  19. Escher-like quasiperiodic heterostructures

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L [Departamento de Optica, Facultad de Fisica, Universidad Complutense, 28040 Madrid (Spain); Costa, A F [Departamento de Matematicas Fundamentales, Facultad de Ciencias, Universidad Nacional de Educacion a Distancia, Senda del Rey 9, 28040 Madrid (Spain)

    2009-05-15

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  20. Use of endochronic plasticity for multi-dimensional small and large strain problems

    Hsieh, B.J.

    1980-04-01

    The endochronic plasticity theory was proposed in its general form by K.C. Valanis. An intrinsic time measure, which is a property of the material, is used in the theory. the explicit forms of the constitutive equation resemble closely those of the classical theory of linear viscoelasticity. Excellent agreement between the predicted and experimental results is obtained for some metallic and non-metallic materials for one dimensional cases. No reference on the use of endochronic plasticity consistent with the general theory proposed by Valanis is available in the open literature. In this report, the explicit constitutive equations are derived that are consistent with the general theory for one-dimensional (simple tension or compression), two-dimensional plane strain or stress and three-dimensional axisymmetric problems

  1. Two-dimensional gel proteome reference map of human small intestine

    Canzonieri Vincenzo

    2009-03-01

    Full Text Available Abstract Background The small intestine is an important human organ that plays a central role in many physiological functions including digestion, absorption, secretion and defense. Duodenal pathologies include, for instance, the ulcer associated to Helicobacter Pylori infection, adenoma and, in genetically predisposed individuals, celiac disease. Alterations in the bowel reduce its capability to absorb nutrients, minerals and fat-soluble vitamins. Anemia and osteopenia or osteoporosis may develop as a consequence of vitamins malabsorption. Adenoma is a benign tumor that has the potential to become cancerous. Adult celiac disease patients present an overall risk of cancer that is almost twice than that found in the general population. These disease processes are not completely known. To date, a two dimensional (2D reference map of proteins expressed in human duodenal tissue is not yet available: the aim of our study was to characterize the 2D protein map, and to identify proteins of duodenal mucosa of adult individuals without duodenal illness, to create a protein database. This approach, may be useful for comparing similar protein samples in different laboratories and for the molecular characterization of intestinal pathologies without recurring to the use of surgical material. Results The enrolled population comprised five selected samples (3 males and 2 females, aged 19 to 42, taken from 20 adult subjects, on their first visit at the gastroenterology unit for a suspected celiac disease, who did not turn to be affected by any duodenal pathology after gastrointestinal and histological evaluations. Proteins extracted from the five duodenal mucosal specimens were singly separated by 2D gel electrophoresis. After image analysis of each 2D gel, 179 protein spots, representing 145 unique proteins, from 218 spots tested, were successfully identified by MALDI-TOF ms analysis. Normalized volumes, for each protein, have been reported for every gel

  2. Accurate correlation energies in one-dimensional systems from small system-adapted basis functions

    Baker, Thomas E.; Burke, Kieron; White, Steven R.

    2018-02-01

    We propose a general method for constructing system-dependent basis functions for correlated quantum calculations. Our construction combines features from several traditional approaches: plane waves, localized basis functions, and wavelets. In a one-dimensional mimic of Coulomb systems, it requires only 2-3 basis functions per electron to achieve high accuracy, and reproduces the natural orbitals. We illustrate its effectiveness for molecular energy curves and chains of many one-dimensional atoms. We discuss the promise and challenges for realistic quantum chemical calculations.

  3. Three-Dimensional Thermal Modeling Analysis Of CST Media For The Small Ion Exchange Project

    Lee, S.; King, W.

    2011-01-01

    The Small Column Ion Exchange (SCIX) project is designed to accelerate closure of High Level Waste (HLW) tanks at the Savannah River Site (SRS). The SRS tanks store HLW in three forms: sludge, saltcake, and supernate. An in-tank ion exchange process is being designed to treat supernate and dissolved saltcake waste. Through this process, radioactive cesium from the salt solution is adsorbed into Crystalline Silicotitanate (CST) ion exchange media packed within a flow-through column. A packed column loaded with radioactive cesium generates significant heat from radiolytic decay. The waste supernate solution within the ion exchange bed will boil around 120 C. Solution superheating above the boiling point within the column could lead to violent hazardous energy releases. System heating from loaded CST is also of concern in other process modules, such as the waste tank. Due to tank structural integrity concerns, the wall temperature limit for the SRS waste tanks is 100 C. The transfer of cesium-loaded CST to the tank could result in localized hot spots on the tank floor and walls which may exceed this limit. As a result, thermal modeling calculations have been conducted to predict the maximum temperatures achievable both in the column and in the waste tank. As specified in the associated Technical Task Plan, one objective of the present work was to compute temperature distributions within the ion exchange column module under accident scenarios including loss of salt solution flow through the bed and loss of coolant system flow. The column modeling domain and the scope of the calculations in this case were broadened relative to previous two-dimensional calculations to include vertical temperature distributions within the packed bed of ion exchange media as well as the upper column plenum region containing only fluid. The baseline design conditions and in-column modeling domain for the ion-exchange column module are shown in Figure 1. These evaluations assumed the maximum

  4. Novel electronic properties of a new MoS{sub 2}/TiO{sub 2} heterostructure and potential applications in solar cells and photocatalysis

    Li, Yanhua [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Cai, Congzhong, E-mail: czcai@cqu.edu.cn [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Gu, Yonghong [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Chongqing Key Laboratory on Optoelectronic Functional Materials, Chongqing Normal University, Chongqing 401331 (China); Cheng, Wende [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Department of Physics, Chongqing University of Science and Technology, Chongqing 401331 (China); Xiong, Wen [Department of Physics, Chongqing University, Chongqing 401331 (China); Zhao, Chengjun [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

    2017-08-31

    Highlights: • The Moiré patterns of a new MoS{sub 2}/TiO{sub 2} heterostructure are investigated. • The novel electronic properties of the new heterostructure are discovered. • The MoS{sub 2}/TiO{sub 2} superlattice is found to have similar electronic properties to the bilayer heterostructure. • Two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively. - Abstract: The structural and electronic properties of two-dimensional (2D) MoS{sub 2}/TiO{sub 2} heterostructure with a special configuration of Moiré pattern have been investigated for the first time using first-principles methods with van der Waals correction. It is found that the new van der Waals heterostructure is of a type-II band alignment between the MoS{sub 2} and TiO{sub 2} layers, and the electronic structures of monolayer MoS{sub 2} and 2D TiO{sub 2} are well retained in their respective layers due to a weak interlayer coupling, which suggests that the heterostructure may have potential applications in many fields such as photoelectric devices, photocatalysis, energy conversion and storage, etc. Meanwhile, the heterostructure can also provide an ideal platform of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for fundamental research such as spin Hall effect, etc. In addition, it is discovered that the corresponding MoS{sub 2}/TiO{sub 2} superlattice also has similar electronic properties to MoS{sub 2}/TiO{sub 2} bilayer heterostructure. Furthermore, two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively.

  5. Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

    Ghosh, Sumit; Manchon, Aurelien

    2017-01-01

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

  6. Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

    Ghosh, Sumit

    2017-11-29

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

  7. Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

    Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

    2018-03-01

    Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

  8. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  9. Control of tunneling in heterostructures

    Volokhov, V M; Tovstun, C A; Ivlev, B

    2007-01-01

    A tunneling current between two rectangular potential wells can be effectively controlled by applying an external ac field. A variation of the ac frequency by 10% may lead to the suppression of the tunneling current by two orders of magnitude, which is a result of quantum interference under the action of the ac field. This effect of destruction of tunneling can be used as a sensitive control of tunneling current across nanosize heterostructures

  10. Processing two-dimensional X-ray diffraction and small-angle scattering data in DAWN 2.

    Filik, J; Ashton, A W; Chang, P C Y; Chater, P A; Day, S J; Drakopoulos, M; Gerring, M W; Hart, M L; Magdysyuk, O V; Michalik, S; Smith, A; Tang, C C; Terrill, N J; Wharmby, M T; Wilhelm, H

    2017-06-01

    A software package for the calibration and processing of powder X-ray diffraction and small-angle X-ray scattering data is presented. It provides a multitude of data processing and visualization tools as well as a command-line scripting interface for on-the-fly processing and the incorporation of complex data treatment tasks. Customizable processing chains permit the execution of many data processing steps to convert a single image or a batch of raw two-dimensional data into meaningful data and one-dimensional diffractograms. The processed data files contain the full data provenance of each process applied to the data. The calibration routines can run automatically even for high energies and also for large detector tilt angles. Some of the functionalities are highlighted by specific use cases.

  11. Semilogarithmic Nonuniform Vector Quantization of Two-Dimensional Laplacean Source for Small Variance Dynamics

    Z. Peric

    2012-04-01

    Full Text Available In this paper high dynamic range nonuniform two-dimensional vector quantization model for Laplacean source was provided. Semilogarithmic A-law compression characteristic was used as radial scalar compression characteristic of two-dimensional vector quantization. Optimal number value of concentric quantization domains (amplitude levels is expressed in the function of parameter A. Exact distortion analysis with obtained closed form expressions is provided. It has been shown that proposed model provides high SQNR values in wide range of variances, and overachieves quality obtained by scalar A-law quantization at same bit rate, so it can be used in various switching and adaptation implementations for realization of high quality signal compression.

  12. Heterostructures for Realizing Magnon-Induced Spin Transfer Torque

    P. B. Jayathilaka

    2012-01-01

    Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.

  13. Topological properties and correlation effects in oxide heterostructures

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  14. New approach to local anodic oxidation of semiconductor heterostructures

    Martaus, Jozef; Gregusova, Dagmar; Cambel, Vladimir; Kudela, Robert; Soltys, Jan

    2008-01-01

    We have experimentally explored a new approach to local anodic oxidation (LAO) of a semiconductor heterostructures by means of atomic force microscopy (AFM). We have applied LAO to an InGaP/AlGaAs/GaAs heterostructure. Although LAO is usually applied to oxidize GaAs/AlGaAs/GaAs-based heterostructures, the use of the InGaP/AlGaAs/GaAs system is more advantageous. The difference lies in the use of different cap layer materials: Unlike GaAs, InGaP acts like a barrier material with respect to the underlying AlGaAs layer and has almost one order of magnitude lower density of surface states than GaAs. Consequently, the InGaP/AlGaAs/GaAs heterostructure had the remote Si-δ doping layer only 6.5 nm beneath the surface and the two-dimensional electron gas (2DEG) was confined only 23.5 nm beneath the surface. Moreover, InGaP unaffected by LAO is a very durable material in various etchants and allows us to repeatedly remove thin portions of the underlying AlGaAs layer via wet etching. This approach influences LAO technology fundamentally: LAO was used only to oxidize InGaP cap layer to define very narrow (∼50 nm) patterns. Subsequent wet etching was used to form very narrow and high-energy barriers in the 2DEG patterns. This new approach is promising for the development of future nano-devices operated both at low and high temperatures

  15. Dimensional nanometrology with grazing incidence small angle X-ray scattering (GISAXS)

    Wernecke, Jan; Krumrey, Michael; Cibik, Levent; Marggraf, Stefanie; Mueller, Peter [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany)

    2011-07-01

    Reliable methods for dimensional characterisation of structures in the nanometer range are now a necessity in many fields of industry and science, e.g. for next-generation EUV lithography, new photovoltaic devices or magnetic nanoparticles. The method we have chosen for measurements of statistically averaged structural properties of nanostructured surfaces is GISAXS. This is a versatile technique to probe statistic properties such as mean particle size, spacial distribution and roughness of nanostructured surfaces and nanoparticle assemblies on top of or buried in bulk material. The GISAXS experiments were performed at the Four-Crystal Monochromator (FCM) beamline in the laboratory of PTB at BESSY II using the SAXS setup of the Helmholtz-Zentrum Berlin (HZB). This presentation will give a short overview of the instrumentation and the capabilities of the laboratory to perform dimensional nanometrology with GISAXS and will show first experimental results. Gratings for EUV lithography have been investigated in terms of coating layer thickness, roughness, grating period and blaze angle. Furthermore, dimensional properties of Au nanoparticles on silicon substrate were determined. The obtained particle sizes were in good agreement with SAXS measurements of these particles in liquid suspension.

  16. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

    Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

    2015-01-01

    Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

  17. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

    Lin, Yu-Chuan

    2015-06-19

    Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

  18. AlN/GaN heterostructures for normally-off transistors

    Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Abgaryan, K. K.; Reviznikov, D. L. [Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Parnes, Ya. M.; Tikhomirov, V. G. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Prosvirin, I. P. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2017-03-15

    The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

  19. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-01-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of M...

  20. Synthesis of Won-WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

    Han, Shikui

    2017-07-04

    Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn -WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a proof-of-concept application, the WOn -WX2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO2.9 NP-WSe2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.

  1. Three-dimensional oblique water-entry problems at small deadrise angles

    Moore, M. R.; Howison, S. D.; Ockendon, J. R.; Oliver, J. M.

    2012-01-01

    This paper extends Wagner theory for the ideal, incompressible normal impact of rigid bodies that are nearly parallel to the surface of a liquid half-space. The impactors considered are three-dimensional and have an oblique impact velocity. A formulation in terms of the displacement potential is used to reveal the relationship between the oblique and corresponding normal impact solutions. In the case of axisymmetric impactors, several geometries are considered in which singularities develop in the boundary of the effective wetted region. We present the corresponding pressure profiles and models for the splash sheets. © 2012 Cambridge University Press.

  2. Coulomb blockade threshold in finite one-dimensional arrays of small tunnel junctions

    Lien, Nguyen V.; Dat, Nguyen T.; Nam, Nguyen H.

    2001-11-01

    The current-voltage characteristics of one-dimensional tunnel junction arrays are simulated using the semiclassical and full capacitance matrix description. The threshold voltage V th of the Coulomb blockade (CB) is evaluated and analyzed in detail as a function of the gate capacitance C 0 , the array length N, the temperature, and the degree of disorder. The disordered effect is found to be essential, while the long range interaction included in the full capacitance matrix calculations, when decreasing V th , weakly affects the qualitative behaviour of the CB for the V th (C 0 ) - and the V th (N)-dependences. (author)

  3. Three-dimensional oblique water-entry problems at small deadrise angles

    Moore, M. R.

    2012-09-19

    This paper extends Wagner theory for the ideal, incompressible normal impact of rigid bodies that are nearly parallel to the surface of a liquid half-space. The impactors considered are three-dimensional and have an oblique impact velocity. A formulation in terms of the displacement potential is used to reveal the relationship between the oblique and corresponding normal impact solutions. In the case of axisymmetric impactors, several geometries are considered in which singularities develop in the boundary of the effective wetted region. We present the corresponding pressure profiles and models for the splash sheets. © 2012 Cambridge University Press.

  4. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  5. Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

    Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

    2014-12-19

    Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

  6. 2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

    Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

    2018-04-01

    Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

  7. Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides

    Haimei Qi

    2018-01-01

    Full Text Available Two dimensional (2D materials have gained significant attention since the discovery of graphene in 2004. Layered transition metal dichalcogenides (TMDs have become the focus of 2D materials in recent years due to their wide range of chemical compositions and a variety of properties. These TMDs layers can be artificially integrated with other layered materials into a monolayer (lateral or a multilayer stack (vertical heterostructures. The resulting heterostructures provide new properties and applications beyond their component 2D atomic crystals and many exciting experimental results have been reported during the past few years. In this review, we present the various synthesis methods (mechanical exfoliation, physical vapor transport, chemical vapor deposition, and molecular beam epitaxy method on van der Waals heterostructures based on different TMDs as well as an outlook for future research.

  8. Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

    Yanli Liu

    2018-01-01

    Full Text Available Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.

  9. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  10. Phase transitions and dynamic entropy in small two-dimensional systems: Experiment and numerical simulation

    Koss, K. G.; Petrov, O. F.; Myasnikov, M. I., E-mail: miasnikovmi@mail.ru; Statsenko, K. B.; Vasiliev, M. M. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

    2016-07-15

    The results of experimental and numerical analysis are presented for phase transitions in strongly nonequilibrium small systems of strongly interacting Brownian particles. The dynamic entropy method is applied to analysis of the state of these systems. Experiments are carried out with kinetic heating of the structures of micron-size particles in a laboratory rf discharge plasma. Three phase states of these small systems are observed: crystalline, liquid, and transient. The mechanism of phase transitions in cluster structures of strongly interacting particles is described.

  11. Long wave polar modes in semiconductor heterostructures

    Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

  12. Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

    Elder, Robert M., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L. [U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)

    2015-08-17

    Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

  13. Three-dimensional ultrasound evaluation of small asymptomatic abdominal aortic aneurysms

    Bredahl, K; Sandholt, B; Lönn, L

    2015-01-01

    physicians. METHODS: In the period from 1 March 2013 to 27 February 2014, consecutive patients with a small AAA, women, underwent 3D-US examination and three AAA size measures were obtained: dual plane diameter, diameter perpendicular to the residual sac's centreline...

  14. Comparison of two dimensional and three dimensional radiotherapy treatment planning in locally advanced non-small cell lung cancer treated with continuous hyperfractionated accelerated radiotherapy weekend less

    Wilson, Elena M.; Joy Williams, Frances; Ethan Lyn, Basil; Aird, Edwin G.A.

    2005-01-01

    Background and purpose: Patients with inoperable non-small cell lung cancer being treated with continuous hyperfractionated accelerated radiotherapy weekend less (CHARTWEL) were planned and treated with a three dimensional (3D) conformal protocol and comparison made with two dimensional (2D) planning, as used previously, to compare past practice and methods. Patients and methods: Twenty-four patients were planned initially using 3D and then replanned using a 2D system. The 2D plans were transferred onto the 3D system and recalculated. Dose volume histograms could then be constructed of planning target volumes for phases 1 and 2 (PTV 1 and 2, respectively), lung and spinal cord for the 2D plans and compared with the 3D plans. Results: There was a significantly lower absolute dose to the isocentre with 2D compared to 3D planning with dose reductions of 3.9% for phase 1, 4.4% for phase 2 and 4.7% for those treated with a single phase. Maximum dose to spinal cord was greater in 17 of the 24 2D plans with a median dose reduction of 0.82 Gy for 3D (P=0.04). The percentage volume of whole lung receiving ≥20 Gy (V 20 ) was greater in 16 of the 24 2D plans with a median reduction in V 20 of 2.4% for 3D (P=0.03). Conclusions: A lower dose to tumour was obtained using 2D planning due to the method of dose calculation and spinal cord and lung doses were significantly higher

  15. Two-dimensional small-world networks: Navigation with local information

    Chen Jianzhen; Liu Wei; Zhu Jianyang

    2006-01-01

    A navigation process is studied on a variant of the Watts-Strogatz small-world network model embedded on a square lattice. With probability p, each vertex sends out a long-range link, and the probability of the other end of this link falling on a vertex at lattice distance r away decays as r -α . Vertices on the network have knowledge of only their nearest neighbors. In a navigation process, messages are forwarded to a designated target. For α 1, a dynamic small world effect is observed, and the behavior of the scaling function at large enough pL is obtained. At α=2 and 3, this kind of scaling breaks down, and different functions of the average actual path length are obtained. For α>3, the average actual path length is nearly linear with network size

  16. Two-dimensional position-sensitive detectors for small-angle neutron scattering

    McElhaney, S.A.; Vandermolen, R.I.

    1990-05-01

    In this paper, various detectors available for small angle neutron scattering (SANS) are discussed, along with some current developments being actively pursued. A section has been included to outline the various methodologies of position encoding/decoding with discussions on trends and limitations. Computer software/hardware vary greatly from institute and experiment and only a general discussion is given to this area. 85 refs., 33 figs

  17. OPENING ADDRESS: Heterostructures in Semiconductors

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  18. Three dimensional optimization of small-scale axial turbine for low temperature heat source driven organic Rankine cycle

    Al Jubori, Ayad; Al-Dadah, Raya K.; Mahmoud, Saad; Bahr Ennil, A.S.; Rahbar, Kiyarash

    2017-01-01

    Highlights: • Three-dimensional optimization of axial turbine stage is presented. • Six organic fluids suitable for low-temperature heat source are considered. • Three-dimensional optimization has been done for each working fluid. • The results showed highlight the potential of optimization technique. • The performance of optimized turbine has been improved off-design conditions. - Abstract: Advances in optimization techniques can be used to enhance the performance of turbines in various applications. However, limited work has been reported on using such optimization techniques to develop small-scale turbines for organic Rankine cycles. This paper investigates the use of multi-objective genetic algorithm to optimize the stage geometry of a small-axial subsonic turbine. This optimization is integrated with organic Rankine cycle analysis using wide range of high density organic working fluids like R123, R134a, R141b, R152a, R245fa and isobutane suitable for low temperature heat sources <100 °C such as solar energy to achieve the best turbine design and highest organic Rankine cycle efficiency. The isentropic efficiency of the turbine in most of the reported organic Rankine cycle studies was assumed constant, while the current work allows the turbine isentropic efficiency to change (dynamic value) with both operating conditions and working fluids. Three-dimensional computational fluid dynamics analysis and multi-objective genetic algorithm optimization were performed using three-dimensional Reynolds-averaged Navier-Stokes equations with k-omega shear stress transport turbulence model in ANSYS"R"1"7-CFX and design exploration for various working fluids. The optimization was carried out using eight design parameters for the turbine stage geometry optimization including stator and rotor number of blades, rotor leading edge beta angle, trailing edge beta angle, stagger angle, throat width, trailing half wedge angle and shroud tip clearance. Results showed that

  19. Validation of Molecular Dynamics Simulations for Prediction of Three-Dimensional Structures of Small Proteins.

    Kato, Koichi; Nakayoshi, Tomoki; Fukuyoshi, Shuichi; Kurimoto, Eiji; Oda, Akifumi

    2017-10-12

    Although various higher-order protein structure prediction methods have been developed, almost all of them were developed based on the three-dimensional (3D) structure information of known proteins. Here we predicted the short protein structures by molecular dynamics (MD) simulations in which only Newton's equations of motion were used and 3D structural information of known proteins was not required. To evaluate the ability of MD simulationto predict protein structures, we calculated seven short test protein (10-46 residues) in the denatured state and compared their predicted and experimental structures. The predicted structure for Trp-cage (20 residues) was close to the experimental structure by 200-ns MD simulation. For proteins shorter or longer than Trp-cage, root-mean square deviation values were larger than those for Trp-cage. However, secondary structures could be reproduced by MD simulations for proteins with 10-34 residues. Simulations by replica exchange MD were performed, but the results were similar to those from normal MD simulations. These results suggest that normal MD simulations can roughly predict short protein structures and 200-ns simulations are frequently sufficient for estimating the secondary structures of protein (approximately 20 residues). Structural prediction method using only fundamental physical laws are useful for investigating non-natural proteins, such as primitive proteins and artificial proteins for peptide-based drug delivery systems.

  20. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  1. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  2. Three-dimensional segmentation and skeletonization to build an airway tree data structure for small animals

    Chaturvedi, Ashutosh; Lee, Zhenghong

    2005-01-01

    Quantitative analysis of intrathoracic airway tree geometry is important for objective evaluation of bronchial tree structure and function. Currently, there is more human data than small animal data on airway morphometry. In this study, we implemented a semi-automatic approach to quantitatively describe airway tree geometry by using high-resolution computed tomography (CT) images to build a tree data structure for small animals such as rats and mice. Silicon lung casts of the excised lungs from a canine and a mouse were used for micro-CT imaging of the airway trees. The programming language IDL was used to implement a 3D region-growing threshold algorithm for segmenting out the airway lung volume from the CT data. Subsequently, a fully-parallel 3D thinning algorithm was implemented in order to complete the skeletonization of the segmented airways. A tree data structure was then created and saved by parsing through the skeletonized volume using the Python programming language. Pertinent information such as the length of all airway segments was stored in the data structure. This approach was shown to be accurate and efficient for up to six generations for the canine lung cast and ten generations for the mouse lung cast

  3. Shrinkage-based diagonal Hotelling’s tests for high-dimensional small sample size data

    Dong, Kai

    2015-09-16

    DNA sequencing techniques bring novel tools and also statistical challenges to genetic research. In addition to detecting differentially expressed genes, testing the significance of gene sets or pathway analysis has been recognized as an equally important problem. Owing to the “large pp small nn” paradigm, the traditional Hotelling’s T2T2 test suffers from the singularity problem and therefore is not valid in this setting. In this paper, we propose a shrinkage-based diagonal Hotelling’s test for both one-sample and two-sample cases. We also suggest several different ways to derive the approximate null distribution under different scenarios of pp and nn for our proposed shrinkage-based test. Simulation studies show that the proposed method performs comparably to existing competitors when nn is moderate or large, but it is better when nn is small. In addition, we analyze four gene expression data sets and they demonstrate the advantage of our proposed shrinkage-based diagonal Hotelling’s test.

  4. Shrinkage-based diagonal Hotelling’s tests for high-dimensional small sample size data

    Dong, Kai; Pang, Herbert; Tong, Tiejun; Genton, Marc G.

    2015-01-01

    DNA sequencing techniques bring novel tools and also statistical challenges to genetic research. In addition to detecting differentially expressed genes, testing the significance of gene sets or pathway analysis has been recognized as an equally important problem. Owing to the “large pp small nn” paradigm, the traditional Hotelling’s T2T2 test suffers from the singularity problem and therefore is not valid in this setting. In this paper, we propose a shrinkage-based diagonal Hotelling’s test for both one-sample and two-sample cases. We also suggest several different ways to derive the approximate null distribution under different scenarios of pp and nn for our proposed shrinkage-based test. Simulation studies show that the proposed method performs comparably to existing competitors when nn is moderate or large, but it is better when nn is small. In addition, we analyze four gene expression data sets and they demonstrate the advantage of our proposed shrinkage-based diagonal Hotelling’s test.

  5. NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

    Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

    2017-08-01

    Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2-WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

  6. Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

    Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

    2018-04-01

    The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

  7. [Evaluation of three-dimensional tumor microvascular architecture phenotype heterogeneity in non-small cell carcinoma and its significance].

    Zhou, Hui; Liu, Jinkang; Chen, Shengxi; Xiong, Zeng; Zhou, Jianhua; Tong, Shiyu; Chen, Hao; Zhou, Moling

    2012-06-01

    To explore the degree, mechanism and clinical significance of three-dimensional tumor microvascular architecture phenotype heterogeneity (3D-TMAPH) in non-small cell carcinoma (NSCLC). Twenty-one samples of solitary pulmonary nodules were collected integrally. To establish two-dimensional tumor microvascular architecture phenotype (2D-TMAP) and three-dimensional tumor microvascular architecture phenotype (3D-TMAP), five layers of each nodule were selected and embedded in paraffin. Test indices included the expressions of vascular endothelial growth factor (VEGF), proliferating cell nuclear antigen (PCNA), EphB4, ephfinB2 and microvascular density marked by anti-CD34 (CD34-MVD). The degrees of 3D-TMAPH were evaluated by the coefficient of variation and extend of heterogeneity. Spearman rank correlation analysis was used to investigate the relationships between 2D-TMAP, 3D-TMAP and clinicopathological features. 3D-TMAPH showed that 2D-TMAP heterogeneity was expressed in the tissues of NSCLC. The heterogeneities in the malignant nodules were significantly higher than those in the active inflammatory nodules and tubercular nodules. In addition, different degrees of heterogeneity of CD34-MVD and PCNA were found in NSCLC tissues. The coefficients of variation of CD34- MVD and PCNA were positively related to the degree of differentiation (all P0.05). The level of heterogeneity of various expression indexes (ephrinB2, EphB4, VEGF) in NSCLC tissues were inconsistent, but there were no significant differences in heterogeneity in NSCLC tissues with different histological types (P>0.05). 3D-TMAPH exists widely in the microenvironment during the genesis and development of NSCLC and has a significant impact on its biological complexity.

  8. Application of a one-dimensional position-sensitive detector to a Kratky small-angle x-ray camera

    Russell, T.P.; Stein, R.S.; Kopp, M.K.; Zedler, R.E.; Hendricks, R.W.; Lin, J.S.

    1979-01-01

    A conventional Kratky small-angle collimation system has been modified to allow the use of a one-dimensional position-sensitive x-ray detector. The detector was designed specifically for use with a long-slit camera and has uniform sensitivity over the entire beam in the slit-length direction. Procedures for alignment of the collimation system are given, and a variety of tests of the performance of the system are presented. Among the latter are measurements of electronic noise and parasitic scattering as well as comparisons against samples which were also measured on other cameras. The good agreement of these comparisons demonstrates the success of the use of a position-sensitive detector with the Kratky collimation system

  9. Two-dimensional thermal analysis of radial heat transfer of monoliths in small-scale steam methane reforming

    Cui, Xiaoti; Kær, Søren Knudsen

    2018-01-01

    Monolithic catalysts have received increasing attention for application in the small-scale steam methane reforming process. The radial heat transfer behaviors of monolith reformers were analyzed by two-dimensional computational fluid dynamic (CFD) modeling. A parameter study was conducted...... by a large number of simulations focusing on the thermal conductivity of the monolith substrate, washcoat layer, wall gap, radiation heat transfer and the geometric parameters (cell density, porosity and diameter of monolith). The effective radial thermal conductivity of the monolith structure, kr......,eff, showed good agreement with predictions made by the pseudo-continuous symmetric model. This influence of the radiation heat transfer is low for highly conductive monoliths. A simplified model has been developed to evaluate the importance of radiation for monolithic reformers under different conditions...

  10. Application of a one-dimensional position-sensitive detector to a Kratky small-angle x-ray camera

    Russell, T.P.; Stein, R.S.; Kopp, M.K.; Zedler, R.E.; Hendricks, R.W.; Lin, J.S.

    1979-01-01

    A conventional Kratky small-angle collimation system has been modified to allow the use of a one-dimensional position-sensitive x-ray detector. The detector was designed specifically for use with a long-slit camera and has uniform sensitivity over the entire beam in the slit-length direction. Procedures for alignment of the collimation system are given, and a variety of tests of the performance of the system are presented. Among the latter are measurements of electronic noise and parasitic scattering as well as comparisons against samples which were also measured on other cameras. The good agreement of these comparisons demonstrates the success of the use of a position-sensitive detector with the Kratky collimation system.

  11. Response to a small external force and fluctuations of a passive particle in a one-dimensional diffusive environment

    Huveneers, François

    2018-04-01

    We investigate the long-time behavior of a passive particle evolving in a one-dimensional diffusive random environment, with diffusion constant D . We consider two cases: (a) The particle is pulled forward by a small external constant force and (b) there is no systematic bias. Theoretical arguments and numerical simulations provide evidence that the particle is eventually trapped by the environment. This is diagnosed in two ways: The asymptotic speed of the particle scales quadratically with the external force as it goes to zero, and the fluctuations scale diffusively in the unbiased environment, up to possible logarithmic corrections in both cases. Moreover, in the large D limit (homogenized regime), we find an important transient region giving rise to other, finite-size scalings, and we describe the crossover to the true asymptotic behavior.

  12. A small molecule-based strategy for endothelial differentiation and three-dimensional morphogenesis from human embryonic stem cells

    Yijie Geng

    2016-07-01

    Full Text Available The emerging models of human embryonic stem cell (hESC self-organizing organoids provide a valuable in vitro platform for studying self-organizing processes that presumably mimic in vivo human developmental events. Here we report that through a chemical screen, we identified two novel and structurally similar small molecules BIR1 and BIR2 which robustly induced the self-organization of a balloon-shaped three-dimensional structure when applied to two-dimensional adherent hESC cultures in the absence of growth factors. Gene expression analyses and functional assays demonstrated an endothelial identity of this balloon-like structure, while cell surface marker analyses revealed a VE-cadherin+CD31+CD34+KDR+CD43− putative endothelial progenitor population. Furthermore, molecular marker labeling and morphological examinations characterized several other distinct DiI-Ac-LDL+ multi-cellular modules and a VEGFR3+ sprouting structure in the balloon cultures that likely represented intermediate structures of balloon-formation.

  13. A small molecule-based strategy for endothelial differentiation and three-dimensional morphogenesis from human embryonic stem cells.

    Geng, Yijie; Feng, Bradley

    2016-07-01

    The emerging models of human embryonic stem cell (hESC) self-organizing organoids provide a valuable in vitro platform for studying self-organizing processes that presumably mimic in vivo human developmental events. Here we report that through a chemical screen, we identified two novel and structurally similar small molecules BIR1 and BIR2 which robustly induced the self-organization of a balloon-shaped three-dimensional structure when applied to two-dimensional adherent hESC cultures in the absence of growth factors. Gene expression analyses and functional assays demonstrated an endothelial identity of this balloon-like structure, while cell surface marker analyses revealed a VE-cadherin(+)CD31(+)CD34(+)KDR(+)CD43(-) putative endothelial progenitor population. Furthermore, molecular marker labeling and morphological examinations characterized several other distinct DiI-Ac-LDL(+) multi-cellular modules and a VEGFR3(+) sprouting structure in the balloon cultures that likely represented intermediate structures of balloon-formation.

  14. Three-dimensional optoacoustic tomography using a conventional ultrasound linear detector array: whole-body tomographic system for small animals.

    Gateau, Jerome; Caballero, Miguel Angel Araque; Dima, Alexander; Ntziachristos, Vasilis

    2013-01-01

    Optoacoustic imaging relies on the detection of ultrasonic waves induced by laser pulse excitations to map optical absorption in biological tissue. A tomographic geometry employing a conventional ultrasound linear detector array for volumetric optoacoustic imaging is reported. The geometry is based on a translate-rotate scanning motion of the detector array, and capitalizes on the geometrical characteristics of the transducer assembly to provide a large solid angular detection aperture. A system for three-dimensional whole-body optoacoustic tomography of small animals is implemented. The detection geometry was tested using a 128-element linear array (5.0∕7.0 MHz, Acuson L7, Siemens), moved by steps with a rotation∕translation stage assembly. Translation and rotation range of 13.5 mm and 180°, respectively, were implemented. Optoacoustic emissions were induced in tissue-mimicking phantoms and ex vivo mice using a pulsed laser operating in the near-IR spectral range at 760 nm. Volumetric images were formed using a filtered backprojection algorithm. The resolution of the optoacoustic tomography system was measured to be better than 130 μm in-plane and 330 μm in elevation (full width half maximum), and to be homogenous along a 15 mm diameter cross section due to the translate-rotate scanning geometry. Whole-body volumetric optoacoustic images of mice were performed ex vivo, and imaged organs and blood vessels through the intact abdominal and head regions were correlated to the mouse anatomy. Overall, the feasibility of three-dimensional and high-resolution whole-body optoacoustic imaging of small animal using a conventional linear array was demonstrated. Furthermore, the scanning geometry may be used for other linear arrays and is therefore expected to be of great interest for optoacoustic tomography at macroscopic and mesoscopic scale. Specifically, conventional detector arrays with higher central frequencies may be investigated.

  15. Small amplitude two dimensional electrostatic excitations in a magnetized dusty plasma with q-distributed electrons

    Khan, Shahab Ullah; Adnan, Muhammad; Qamar, Anisa; Mahmood, Shahzad

    2016-07-01

    The propagation of linear and nonlinear electrostatic waves is investigated in magnetized dusty plasma with stationary negatively or positively charged dust, cold mobile ions and non-extensive electrons. Two normal modes are predicted in the linear regime, whose characteristics are investigated parametrically, focusing on the effect of electrons non-extensivity, dust charge polarity, concentration of dust and magnetic field strength. Using the reductive perturbation technique, a Zakharov-Kuznetsov (ZK) type equation is derived which governs the dynamics of small-amplitude solitary waves in magnetized dusty plasma. The properties of the solitary wave structures are analyzed numerically with the system parameters i.e. electrons non-extensivity, concentration of dust, polarity of dust and magnetic field strength. Following Allen and Rowlands (J. Plasma Phys. 53:63, 1995), we have shown that the pulse soliton solution of the ZK equation is unstable, and have analytically traced the dependence of the instability growth rate on the nonextensive parameter q for electrons, dust charge polarity and magnetic field strength. The results should be useful for understanding the nonlinear propagation of DIA solitary waves in laboratory and space plasmas.

  16. Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM

    Stefanovich, G. B.; Pergament, A. L.; Boriskov, P. P.; Kuroptev, V. A., E-mail: v.a.kuroptev@gmail.com; Stefanovich, T. G. [Petrozavodsk State University (Russian Federation)

    2016-05-15

    The main aspects of the synthesis and experimental research of oxide diode heterostructures are discussed with respect to their use as selector diodes, i.e., access elements in oxide resistive memory. It is shown that charge transfer in these materials differs significantly from the conduction mechanism in p–n junctions based on conventional semiconductors (Si, Ge, A{sup III}–B{sup V}), and the model should take into account the electronic properties of oxides, primarily the low carrier drift mobility. It is found that an increase in the forward current requires an oxide with a small band gap (<1.3 eV) in the heterostructure composition. Heterostructures with Zn, In–Zn (IZO), Ti, Ni, and Cu oxides are studied; it is found that the CuO–IZO heterojunction has the highest forward current density (10{sup 4} A/cm{sup 2}).

  17. Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

    Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2016-02-14

    Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.

  18. Thermal response in van der Waals heterostructures

    Gandi, Appala; Alshareef, Husam N.; Schwingenschlö gl, Udo

    2016-01-01

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical

  19. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

    Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

    2015-08-12

    Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

  20. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

    2016-05-05

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  1. Impact of respiratory movement on the computed tomographic images of small lung tumors in three-dimensional (3D) radiotherapy

    Shimizu, Shinichi; Shirato, Hiroki; Kagei, Kenji; Nishioka, Takeshi; Bo Xo; Dosaka-Akita, Hirotoshi; Hashimoto, Seiko; Aoyama, Hidefumi; Tsuchiya, Kazuhiko; Miyasaka, Kazuo

    2000-01-01

    Purpose: Three-dimensional (3D) treatment planning has often been performed while patients breathe freely, under the assumption that the computed tomography (CT) images represent the average position of the tumor. We investigated the impact of respiratory movement on the free-breathing CT images of small lung tumors using sequential CT scanning at the same table position. Methods: Using a preparatory free-breathing CT scan, the patient's couch was fixed at the position where each tumor showed its maximum diameter on image. For 16 tumors, over 20 sequential CT images were taken every 2 s, with a 1-s acquisition time occurring during free breathing. For each tumor, the distance between the surface of the CT table and the posterior border of the tumor was measured to determine whether the edge of the tumor was sufficiently included in the planning target volume (PTV) during normal breathing. Results: In the sequential CT scanning, the tumor itself was not visible in the examination slice in 21% (75/357) of cases. There were statistically significant differences between lower lobe tumors (39.4%, 71/180) and upper lobe tumors (0%, 0/89) (p < 0.01) and between lower lobe tumors and middle lobe tumor (8.9%, 4/45) (p < 0.01) in the incidence of the disappearance of the tumor from the image. The mean difference between the maximum and minimum distances between the surface of the CT table and the posterior border of the tumor was 6.4 mm (range 2.1-24.4). Conclusion: Three-dimensional treatment planning for lung carcinoma would significantly underdose many lesions, especially those in the lower lobe. The excess 'safety margin' might call into question any additional benefit of 3D treatment. More work is required to determine how to control respiratory movement

  2. Space- and time-dependent quantum dynamics of spatially indirect excitons in semiconductor heterostructures

    Grasselli, Federico, E-mail: federico.grasselli@unimore.it; Goldoni, Guido, E-mail: guido.goldoni@unimore.it [Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Modena (Italy); CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy); Bertoni, Andrea, E-mail: andrea.bertoni@nano.cnr.it [CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy)

    2015-01-21

    We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.

  3. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

    Völkl, Tobias; Rockinger, Tobias; Drienovsky, Martin; Watanabe, Kenji; Taniguchi, Takashi; Weiss, Dieter; Eroms, Jonathan

    2017-09-01

    We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene /WSe2/SiO2 samples we observe mobilities of ˜12 000 cm2V-1s-1 . Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to ˜120 000 cm2V-1s-1 . However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.

  4. Bottom-up photonic crystal approach with top-down defect and heterostructure fine-tuning.

    Ding, Tao; Song, Kai; Clays, Koen; Tung, Chen-Ho

    2010-03-16

    We combine the most efficient (chemical) approach toward three-dimensional photonic crystals with the most convenient (physical) technique for creating non-close-packed crystalline structures. Self-assembly of colloidal particles in artificial opals is followed by a carefully tuned plasma etching treatment. By covering the resulting top layer of more open structure with original dense opal, embedded defect layers and heterostructures can be conveniently designed for advanced photonic band gap and band edge engineering.

  5. Tunable multichannel filter in photonic crystal heterostructure containing permeability-negative materials

    Hu Xiaoyong; Liu Zheng; Gong Qihuang

    2008-01-01

    A tunable multichannel filter is demonstrated theoretically based on a one-dimensional photonic crystal heterostructure containing permeability-negative material. The filtering properties of the photonic crystal filter, including the channel number and frequency, can be tuned by adjusting the structure parameters or by a pump laser. The angular response of the photonic crystal filter and the influences of the losses on the filtering properties are also analyzed

  6. Tunable multichannel filter in photonic crystal heterostructure containing permeability-negative materials

    Hu Xiaoyong [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)], E-mail: xiaoyonghu@pku.edu.cn; Liu Zheng [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Gong Qihuang [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)], E-mail: qhgong@pku.edu.cn

    2008-01-14

    A tunable multichannel filter is demonstrated theoretically based on a one-dimensional photonic crystal heterostructure containing permeability-negative material. The filtering properties of the photonic crystal filter, including the channel number and frequency, can be tuned by adjusting the structure parameters or by a pump laser. The angular response of the photonic crystal filter and the influences of the losses on the filtering properties are also analyzed.

  7. Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures.

    Sun, Minglei; Chou, Jyh-Pin; Yu, Jin; Tang, Wencheng

    2017-07-05

    Blue phosphorene (BlueP) is a graphene-like phosphorus nanosheet which was synthesized very recently for the first time [Nano Lett., 2016, 16, 4903-4908]. The combination of electronic properties of two different two-dimensional materials in an ultrathin van der Waals (vdW) vertical heterostructure has been proved to be an effective approach to the design of novel electronic and optoelectronic devices. Therefore, we used density functional theory to investigate the structural and electronic properties of two BlueP-based heterostructures - BlueP/graphene (BlueP/G) and BlueP/graphene-like gallium nitride (BlueP/g-GaN). Our results showed that the semiconducting nature of BlueP and the Dirac cone of G are well preserved in the BlueP/G vdW heterostructure. Moreover, by applying a perpendicular electric field, it is possible to tune the position of the Dirac cone of G with respect to the band edge of BlueP, resulting in the ability to control the Schottky barrier height. For the BlueP/g-GaN vdW heterostructure, BlueP forms an interface with g-GaN with a type-II band alignment, which is a promising feature for unipolar electronic device applications. Furthermore, we discovered that both G and g-GaN can be used as an active layer for BlueP to facilitate charge injection and enhance the device performance.

  8. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  9. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-04-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

  10. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  11. Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

    He, Xin; Li, Hai; Zhu, Zhiyong; Dai, Zhenyu; Yang, Yang; Yang, Peng; Zhang, Qiang; Li, Peng; Schwingenschlö gl, Udo; Zhang, Xixiang

    2016-01-01

    Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

  12. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

    Goyal, Nitin, E-mail: nitin@unik.no [Carinthian Tech Research CTR AG, Europastraße 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)

    2014-07-21

    In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

  13. Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

    He, Xin

    2016-10-27

    Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

  14. Polarized neutron reflectivity and scattering studies of magnetic heterostructures

    Zabel, H; Theis-Broehl, K

    2003-01-01

    The current interest in the magnetism of ultrathin films and multilayers is driven by their manifold applications in the magneto-and spin-electronic areas, for instance as magnetic field sensors or as information storage devices. In this regard, there is a large interest in exploring spin structures and spin disorder at the interface of magnetic heterostructures, to investigate magnetic domains in thin films and superlattices, and to understand remagnetization processes of various laterally shaped magnetic nanostructures. Traditionally neutron scattering has played a dominant role in the determination of spin structures, phase transitions and magnetic excitations in bulk materials. Today, its potential for the investigation of thin magnetic films has to be redefined. Polarized neutron reflectivity (PNR) at small wavevectors can provide precise information on the magnetic field distribution parallel to the film plane and on layer resolved magnetization vectors. In addition, PNR is not only sensitive to structural interface roughness but also to the magnetic roughness. Furthermore, magnetic hysteresis measurements from polarized small angle Bragg reflections allows us to filter out correlation effects during magnetization reversals of magnetic stripes and islands. An overview is provided on most recent PNR investigations of magnetic heterostructures

  15. Application of Three - dimensional Wound Analyzer in the Small Wound Area Measurement during the Process of Wound Healing.

    Sheng, Jiajun; Li, Haihang; Jin, Jian; Liu, Tong; Ma, Bing; Liu, Gongcheng; Zhu, Shihui

    2018-02-20

    The objective of this study was to determinate the reliability of 3-dimensional wound analyzer (3-DWMD) in the wound area measurement for animal small area in the process of wound healing. Seven Sprague-Dawley rats were used to establish the skin defect model. And the wound area and time consumption were measured on days 0, 5, 10, 15 using 3-DWMD, investigators, and planimetry method. The measurement results using 3-DWMD and investigators were analyzed comparative with that using planimetry method separately. A total 46 wounds, including 32 irregular wounds and regular 14 wounds, were measured. No matter calculating the irregular wounds or the regular wounds, there was no significant difference between 3-DWMD group and planimetry group in measuring wound area (P > 0.05). However, a statistically significant difference was found in time-consuming for measuring wound area between 3-DWMD group and planimetry group (P area, and its measurement results were consistent with planimetry method. Therefore, such measuring equipment has clinical reference value for measuring precision area of the wound in the process of wound healing.

  16. Accelerated hypofractionated three-dimensional conformal radiation therapy in the treatment of non-small cell lung cancer

    Yu Jinming; Zheng Aiqing; Yu Yonghua; Wang Xuetao; Yuan Shuanghu; Han Dali; Li Kunhai

    2005-01-01

    Objective: To evaluate the effect and complication of non-small-cell lung cancer (NSCLC) treated with accelerated hypofractionated three dimensional conforms] radiation therapy (3DCRT). Methods: There were squamous carcinoma 21, adenocarcinoma 7, squamous-adenocarcinoma 4 and other cancer 3. There were 17 stage I and 18 stage II. Thirty-five patients of NSCLC were treated with a dose of 30-48 Gy in 6 or 8 Gy per fraction, 3 times a week. The outcome of these patients Was analyzed. Results: The overall 1-, 2- and 3- Year survival rate was 78.2%, 46.9% and 36.3%, respectively. The 1- and 2-year recurrence-free survival rate was 64.6 % and 39.7 %, respectively. The acute radiation pneumonitis and late lung fibrosis rates were high. Univariate analysis showed that Vm was a significant predictor of acute radiation pneumonitis. Conclusion: Compared with accelerated hypofractionated irradiation, the routine conventional fractionated radiation therapy may be preferred for more patients of NSCLC. (authors)

  17. Intensity-Modulated Radiotherapy versus 3-Dimensional Conformal Radiotherapy Strategies for Locally Advanced Non-Small-Cell Lung Cancer

    Uğur Selek

    2014-12-01

    Full Text Available Chemoradiotherapy is the current standard of care in patients with advanced inoperable stage IIIA or IIIB non-small cell lung cancer (NSCLC. Three-dimensional radiotherapy (3DCRT has been a trusted method for a long time and has well-known drawbacks, most of which could be improved by Intensity Modulated Radiotherapy (IMRT. IMRT is not currently the standard treatment of locally advanced NSCLC, but almost all patients could benefit to a degree in organ at risk sparing, dose coverage conformality, or dose escalation. The most critical step for a radiation oncology department is to strictly evaluate its own technical and physical capabilities to determine the ability of IMRT to deliver an optimal treatment plan. This includes calculating the internal tumor motion (ideally 4DCT or equivalent techniques, treatment planning software with an up-to-date heterogeneity correction algorithm, and daily image guidance. It is crucial to optimise and individualise the therapeutic ratio for each patient during the decision of 3DCRT versus IMRT. The current literature rationalises the increasing use of IMRT, including 4D imaging plus PET/CT, and encourages the applicable knowledge-based and individualised dose escalation using advanced daily image-guided radiotherapy.

  18. Induction chemotherapy combined with three-dimensional conformal radiation therapy for locally advanced non-small cell lung cancer

    Zheng Aiqing; Yu Jinming; Zhao Xianguang; Wang Xuetao; Wei Guangsheng

    2005-01-01

    Objective: To evaluate the effect and complication of induction chemotherapy combined with three-dimensional conformal radiation therapy (3DCRT) for locally advanced non small cell lung cancer (NSCLC). Methods: Ninety-two such patients were randomized into radiation therapy alone group(RT-, 50 patients) and induction chemotherapy combined radiotherapy group (CMT-, 42 patients). The induction chemotherapy consisted of 2-4 cycles of platinum-based regimen. Results: The overall median survival time was 15 months with 12 months in the RT group and 18 months in the CMT group (P=0.014) respectively. The 1-year overall survival rates were 48.6% and 71.2% in RT and CMT group, respectively (P=0.004). The 2-year survival rates were 20.8% and 37.6% in RT and CMT group, respectively (P=0.041). Treatment was well tolerated and the toxicities were similar in either group. Conclusion: The addition of induction chemotherapy to 3DCRT takes a survival advantage over 3DCRT alone for Stage III NSCLC without increasing toxicities. (authors)

  19. 2D Vertical Heterostructures for Novel Tunneling Device Applications

    2017-03-01

    2D Vertical Heterostructures for Novel Tunneling Device Applications Philip M. Campbell, Christopher J. Perini, W. Jud Ready, and Eric M. Vogel...School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA, USA 30332 Abstract: Vertical heterostructures...digital logic, signal processing, analog-to-digital conversion, and high-frequency communications, vertical heterostructure tunneling devices have

  20. Electric field control of the small-polaron hopping conduction in spatial confined Pr0.7(Ca0.6Sr0.40.3MnO3/PMN-PT heterostructure

    Hao Kuang

    2017-05-01

    Full Text Available The electric field dependent high-temperature small-polaron hopping conduction was investigated in patterned Pr0.7(Ca0.6Sr0.40.3MnO3 strips. The small-polaronic activation energy EA and the carrier localization were found to decrease with the reduction of the strip size. Meanwhile, a similar dependence on the strip size was also obtained for the calculated small-polaron coupling constants, which could be related to the strain relaxation in strips. These results indicate that the spatial confinement prefers to delocalize the carrier and reduce the electron-phonon interaction. Furthermore, opposite variation trends of EA under negative and positive electric field were found in the strips with small size, which could be attributed to the enhancement of polarization effect induced by the reduction of strip size.

  1. Dose escalation of chart in non-small cell lung cancer: is three-dimensional conformal radiation therapy really necessary?

    McGibney, Carol; Holmberg, Ola; McClean, Brendan; Williams, Charles; McCrea, Pamela; Sutton, Phil; Armstrong, John

    1999-01-01

    Purpose: To evaluate, pre clinically, the potential for dose escalation of continuous, hyperfractionated, accelerated radiation therapy (CHART) for non small-cell lung cancer (NSCLC), we examined the strategy of omission of elective nodal irradiation with and without the application of three-dimensional conformal radiation technology (3DCRT). Methods and Materials: 2D, conventional therapy plans were designed according to the specifications of CHART for 18 patients with NSCLC (Stages Ib, IIb, IIIa, and IIIb). Further plans were generated with the omission of elective nodal irradiation (ENI) from the treatment portals (2D minus ENI plans [2D-ENI plans]). Both sets were inserted in the patient's planning computed tomographies (CTs). These reconstructed plans were then compared to alternative, three-dimensional treatment plans which had been generated de novo, with the omission of ENI: 3D minus elective nodal irradiation (3D-ENI plans). Dose delivery to the planning target volumes (PTVs) and to the organs at risk were compared between the 3 sets of corresponding plans. The potential for dose escalation of each patient's 2D-ENI and 3D-ENI plan beyond 54 Gy, standard to CHART, was also determined. Results: PTV coverage was suboptimal in the 2D CHART and the 2D-ENI plans. Only in the 3D-ENI plans did 100% of the PTV get ≥95% of the dose prescribed (i.e., 51.5 Gy [51.3-52.2]). Using 3D-ENI plans significantly reduced the dose received by the spinal cord, the mean and median doses to the esophagus and the heart. It did not significantly reduce the lung dose when compared to 2D-ENI plans. Escalation of the dose (minimum ≥1 Gy) with optimal PTV coverage was possible in 55.5% of patients using 3D-ENI, but was possible only in 16.6% when using the 2D-ENI planning strategy. Conclusions: 3DCRT is fundamental to achieving optimal PTV coverage in NSCLC. A policy of omission of elective nodal irradiation alone (and using 2D technology) will not achieve optimal PTV coverage or

  2. Quasi-two-dimensional electron gas at the interface of γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterostructures grown by atomic layer deposition

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Goble, Nicholas J.; Gao, Xuan P. A. [Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106 (United States); Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A. [Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States); Lu, Sirong [School of Engineering for Matter, Transport and Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Jordan-Sweet, Jean [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-09-21

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al{sub 2}O{sub 3}/TiO{sub 2}-terminated SrTiO{sub 3} (STO) grown by atomic layer deposition (ALD). The ALD growth of Al{sub 2}O{sub 3} on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al{sub 2}O{sub 3} films. As-deposited Al{sub 2}O{sub 3} films grown above 300 °C were crystalline with the γ-Al{sub 2}O{sub 3} phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al{sub 2}O{sub 3}/STO interface, indicating that a Ti{sup 3+} feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al{sub 2}O{sub 3} at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm{sup 2} V{sup −1} s{sup −1} at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al{sub 2}O{sub 3} layer. The Ti{sup 3+} signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

  3. Multilayer heterostructures and their manufacture

    Hammond, Scott R; Reese, Matthew; Rupert, Benjamin; Miedaner, Alexander; Curtis, Clavin; Olson, Dana; Ginley, David S

    2015-11-04

    A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225.degree. C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlO.sub.x layer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150.degree. C. The resulting AlO.sub.x layer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150.degree. C

  4. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  5. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-01-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices. PMID:27553787

  6. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-08-24

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

  7. Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

    Lu, Di; Baek, David J.; Hong, Seung Sae; Kourkoutis, Lena F.; Hikita, Yasuyuki; Hwang, Harold Y.

    2016-08-22

    The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr3Al2O6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr3Al2O6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.

  8. Gallium nitride heterostructures on 3D structured silicon.

    Fündling, Sönke; Sökmen, Unsal; Peiner, Erwin; Weimann, Thomas; Hinze, Peter; Jahn, Uwe; Trampert, Achim; Riechert, Henning; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  9. Gallium nitride heterostructures on 3D structured silicon

    Fuendling, Soenke; Soekmen, Uensal; Peiner, Erwin; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], E-mail: s.fuendling@tu-bs.de

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  10. Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

    Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

    2017-11-01

    In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

  11. Small-angle X-ray scattering tensor tomography: model of the three-dimensional reciprocal-space map, reconstruction algorithm and angular sampling requirements.

    Liebi, Marianne; Georgiadis, Marios; Kohlbrecher, Joachim; Holler, Mirko; Raabe, Jörg; Usov, Ivan; Menzel, Andreas; Schneider, Philipp; Bunk, Oliver; Guizar-Sicairos, Manuel

    2018-01-01

    Small-angle X-ray scattering tensor tomography, which allows reconstruction of the local three-dimensional reciprocal-space map within a three-dimensional sample as introduced by Liebi et al. [Nature (2015), 527, 349-352], is described in more detail with regard to the mathematical framework and the optimization algorithm. For the case of trabecular bone samples from vertebrae it is shown that the model of the three-dimensional reciprocal-space map using spherical harmonics can adequately describe the measured data. The method enables the determination of nanostructure orientation and degree of orientation as demonstrated previously in a single momentum transfer q range. This article presents a reconstruction of the complete reciprocal-space map for the case of bone over extended ranges of q. In addition, it is shown that uniform angular sampling and advanced regularization strategies help to reduce the amount of data required.

  12. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

    Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

    2014-01-01

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

  13. Hydrodynamic pumping of a quantum Fermi liquid in a semiconductor heterostructure

    Heremans, J. J.; Kantha, D.; Chen, H.; Govorov, A. O.

    2003-03-01

    We present experimental results for a pumping mechanism observed in mesoscopic structures patterned on two-dimensional electron systems in GaAs/AlGaAs heterostructures. The experiments are performed at low temperatures, in the ballistic regime. The effect is observed as a voltage or current signal corresponding to carrier extraction from sub-micron sized apertures, when these apertures are swept by a beam of ballistic electrons. The carrier extraction, phenomenologically reminiscent of the Bernoulli pumping effect in classical fluids, has been observed in various geometries. We ascertained linearity between measured voltage and injected current in all experiments, thereby excluding rectification effects. The linear response, however, points to a fundamental difference from the Bernoulli effect in classical liquids, where the response is nonlinear and quadratic in terms of the velocity. The temperature dependence of the effect will also be presented. We thank M. Shayegan (Princeton University) for the heterostructure growth, and acknowledge support from NSF DMR-0094055.

  14. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

    Lin, Yu-Chuan

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).

  15. Shallow acceptors in Ge/GeSi heterostructures with quantum wells in magnetic field

    Aleshkin, V.Ya.; Antonov, A.V.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Spirin, K.E.; Kuznetsov, O.A.

    2005-01-01

    One investigated both theoretically and experimentally into shallow acceptors in Ge/GeSi heterostructures with quantum wells (QW) in a magnetic field. It is shown that alongside with lines of cyclotron resonance in magnetoabsorption spectra one observes transitions from the ground state of acceptor to the excited ones associated with the Landau levels from the first and the second subbands of dimensional quantization, and resonance caused by ionization of A + -centres. To describe impurity transitions in Ge/GeSi heterostructures with QW in a magnetic field and to interpret the experiment results in detail one uses numerical method of calculation based on expansion of wave function of acceptor in terms of basis of wave functions of holes in QW in the absence of magnetic field [ru

  16. Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

    Nguyen, Chuong V.

    2018-04-01

    In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

  17. Stabilized thin film heterostructure for electrochemical applications

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  18. SCORCH - a zero dimensional plasma evolution and transport code for use in small and large tokamak systems

    Clancy, B.E.; Cook, J.L.

    1984-12-01

    The zero-dimensional code SCORCH determines number density and temperature evolution in plasmas using concepts derived from the Hinton and Hazeltine transport theory. The code uses the previously reported ADL-1 data library

  19. Radiation-induced esophagitis in local advanced non-small cell lung cancer after three-dimensional conformal radiotherapy

    Tian Dandan; Wang Yuxiang; Qiu Rong; Zhu Shuchai; Tian Xiuming; Qiao Xueying

    2014-01-01

    Objective: To explore radiation-induced esophagitis and its related factors in the patients with local advanced non-small cell lung cancer (NSCLC) which were treated with three-dimensional conformal radiation therapy (3D-CRT). Methods: From January 2001 to December 2008, 203 patients who suffered from stage Ⅲ NSCLC were achieved, including 163 males and 40 females, with a median age of 63 years old, while 79 cases were in stage Ⅲ_a and 124 in stage Ⅲ_b. The equivalent median dose of tumor was 62 Gy(range of 50-78 Gy). Among them, 74 cases were administered with radiotherapy alone, 45 with sequential radiotherapy and chemotherapy, 87 cases with concurrent radiochemotherapy. Radiation esophagitis was evaluated with RTOG standard. The dosimetric parameters was estimated from dose volume histogrma (DVH). The clinical and dosimetric parameters of radiation esophagitis were evaluated by spearman correlatived univariate and Logistic multivariable analysis.Results After radiotherapy, out of 203 patients, 87 had acute radiation esophagitis(RE), 47 in grade 1, 37 in grade 2, and 3 in grade 3 RE. According to spearman correlatived analysis, the correlatived factors included ages, chemotherapy, GTV, PTV, the mean doses of PTV and lung, the max and mean dose of esophagus, V_4_0, V_4_5, V_5_0, V_5_5, V_6_0, length of esophagus (total circumference) treated with 45 Gy (LETT_4_5), and LETT_5_0 (r = -0.162-0.235, P 0.05). There were 21 factors, such as gender, age, smoking, clinical stage, site of tumor, chemotherapy, GTV, PTV, mean dose of PTV and lung, max and mean dose of esophagus, V_4_0-V_6_0 of esophagus, LETT_4_5_-_6_0, incorporated into multivariable analysis, only chemotherapy and V_4_5 of esophagus were independent predicted factors(Wald = 4.626, 9.882, P < 0.05). Conclusions: In local advanced NSCLC after 3D-CRT, chemotherapy(especially concurrent radiochemotherapy) could increase radiation-induced esophagitis. The parameter of DVH could also be used to predict

  20. [Mesh structure of two-dimensional tumor microvascular architecture phenotype heterogeneity in non-small cell lung cancer].

    Xiong, Zeng; Zhou, Hui; Liu, Jin-Kang; Hu, Cheng-Ping; Zhou, Mo-Ling; Xia, Yu; Zhou, Jian-Hua

    2009-11-01

    To investigate the structural characteristics and clinical significance of two-dimensional tumor microvascular architecture phenotype (2D-TMAP) in non-small cell lung cancer (NSCLC). Thirty surgical specimens of NSCLC were collected. The sections of the tumor tissues corresponding to the slice of CT perfusion imaging were selected to construct the 2D-TMAP expression. Spearman correlation analysis was used to examine the relation between the 2D-TMAP expression and the clinicopathological features of NSCLC. A heterogeneity was noted in the 2D-TMAP expression of NSCLC. The microvascular density (MVD) in the area surrounding the tumor was higher than that in the central area, but the difference was not statistically significant. The density of the microvessels without intact lumen was significantly greater in the surrounding area than in the central area (P=0.030). The total MVD was not correlated to tumor differentiation (r=0.042, P=0.831). The density of the microvessels without intact lumen in the surrounding area was positively correlated to degree of tumor differentiation and lymph node metastasis (r=0.528 and 0.533, P=0.041 and 0.028, respectively), and also to the expressions of vascular endothelial growth factor (VEGF), ephrinB2, EphB4, and proliferating cell nuclear antigen (PCNA) (r=0.504, 0.549, 0.549, and 0.370; P=0.005, 0.002, 0.002, and 0.048, respectively). The degree of tumor differentiation was positively correlated to PCNA and VEGF expression (r=0.604 and 0.370, P=0.001 and 0.048, respectively), but inversely to the integrity of microvascular basement membrane (r=-0.531, P=0.033). The 2D-TMAP suggests the overall state of the micro-environment for tumor growth. The 2D-TMAP of NSCLC regulates angiogenesis and tumor cell proliferation through a mesh-like structure, and better understanding of the characteristics and possible mechanism of 2D-TMAP expression can be of great clinical importance.

  1. Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts

    Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

    2013-09-01

    Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se

  2. The Effect of Pulsatile Flow on bMSC-Derived Endothelial-Like Cells in a Small-Sized Artificial Vessel Made by 3-Dimensional Bioprinting

    Kang Woog Lee

    2018-01-01

    Full Text Available Replacement of small-sized vessels is still challenging. This study is aimed at investigating the possibility of small-sized artificial vessels made by 3-dimensional bioprinting and the effect of pulsatile flow on bMSC-derived endothelial-like cells. Cells were harvested from rabbit bone marrow and primary cultured with or without growth factors. Endothelial differentiation was confirmed by the Matrigel tube formation assay, Western blot, and qRT-PCR. In addition, embedment of endothelial-like cells in an artificial vessel was made by 3-dimensional bioprinting, and the pulsatile flow was performed. For pumped and nonpumped groups, qRT-PCR was performed on CD31 and VE-cadherin gene expression. Endothelial-like cells showed increased gene expression of CD31 and VE-cadherin, and tube formation is observed at each week. Endothelial-like cells grow well in a small-sized artificial vessel made by 3-dimensional bioprinting and even express higher endothelial cell markers when they undergo pulsatile flow condition. Moreover, the pulsatile flow condition gives a positive effect for cell observation not only on the sodium alginate hydrogel layer but also on the luminal surface of the artificial vessel wall. We have developed an artificial vessel, which is a mixture of cells and carriers using a 3-dimensional bioprinting method, and applied pulsatile flow using a peristaltic pump, and we also demonstrated cell growth and differentiation into endothelial cells. This study suggests guidelines regarding a small-sized artificial vessel in the field of tissue engineering.

  3. Experimental Validation of a Numerical Model for Three-Dimensional High-Speed Railway Bridge Analysis by Comparison with a Small-Scale Model

    Sneideris, J.; Bucinskas, Paulius; Agapii, L.

    2015-01-01

    The aim of this paper is to perform dynamic analysis of a multi-span railway bridge interacting with the underlying soil. A small-scale model of a bridge structure is constructed for experimental testing and the results are compared with a computational model. The computational model in this paper...... dimensional 10-degrees-of-freedom system. The subsoil model utilizes Green’s function for a horizontally layered half-space. The small-scale experimental model consists of bridge deck, columns and footings which are made from Plexiglas. An electric vehicle travels along the bridge deck on a track to simulate...

  4. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

    Jacky Even

    2014-01-01

    Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

  5. GaN heterostructures for biosensing and radiation detection

    Howgate, John D.

    2012-12-11

    In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

  6. Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

    Tang, Hao-Ling

    2017-11-29

    Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.

  7. GaN heterostructures for biosensing and radiation detection

    Howgate, John D.

    2012-01-01

    In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

  8. Multi-color imaging of magnetic Co/Pt heterostructures

    Felix Willems

    2017-01-01

    Full Text Available We present an element specific and spatially resolved view of magnetic domains in Co/Pt heterostructures in the extreme ultraviolet spectral range. Resonant small-angle scattering and coherent imaging with Fourier-transform holography reveal nanoscale magnetic domain networks via magnetic dichroism of Co at the M2,3 edges as well as via strong dichroic signals at the O2,3 and N6,7 edges of Pt. We demonstrate for the first time simultaneous, two-color coherent imaging at a free-electron laser facility paving the way for a direct real space access to ultrafast magnetization dynamics in complex multicomponent material systems.

  9. A size exclusion-reversed phase two dimensional-liquid chromatography methodology for stability and small molecule related species in antibody drug conjugates.

    Li, Yi; Gu, Christine; Gruenhagen, Jason; Zhang, Kelly; Yehl, Peter; Chetwyn, Nik P; Medley, Colin D

    2015-05-08

    Antibody drug conjugates (ADCs) are complex therapeutic agents combining the specific targeting properties of antibodies and highly potent cytotoxic small molecule drugs to selectively eliminate tumor cells while limiting the toxicity to normal healthy tissues. One unique critical quality attribute of ADCs is the content of unconjugated small molecule drug present from either incomplete conjugation or degradation of the ADC. In this work, size exclusion chromatography (SEC) was coupled with reversed-phase (RP) HPLC in an online 2-dimensional chromatography format for identification and quantitation of unconjugated small molecule drugs and related small molecule impurities in ADC samples directly without sample preparation. The SEC method in the 1st dimension not only separated the small molecule impurities from the intact ADC, but also provided information about the size variants (monomer, dimer, aggregates, etc.) of the ADC. The small molecule peak from the SEC was trapped and sent to a RP-HPLC in the 2nd dimension to further separate and quantify the different small molecule impurities present in the ADC sample. This SEC-RP 2D-LC method demonstrated excellent precision (%RSDmolecule degradation products and aggregation of the conjugate were observed in the stability samples and the degradation pathways of the ADC were investigated. This 2D-LC method offers a powerful tool for ADC characterization and provides valuable information for conjugation and formulation development. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Low Dimensional Semiconductor Structures Characterization, Modeling and Applications

    Horing, Norman

    2013-01-01

    Starting with the first transistor in 1949, the world has experienced a technological revolution which has permeated most aspects of modern life, particularly over the last generation. Yet another such revolution looms up before us with the newly developed capability to control matter on the nanometer scale. A truly extraordinary research effort, by scientists, engineers, technologists of all disciplines, in nations large and small throughout the world, is directed and vigorously pressed to develop a full understanding of the properties of matter at the nanoscale and its possible applications, to bring to fruition the promise of nanostructures to introduce a new generation of electronic and optical devices. The physics of low dimensional semiconductor structures, including heterostructures, superlattices, quantum wells, wires and dots is reviewed and their modeling is discussed in detail. The truly exceptional material, Graphene, is reviewed; its functionalization and Van der Waals interactions are included h...

  11. Preoperative (3-dimensional) computed tomography lung reconstruction before anatomic segmentectomy or lobectomy for stage I non-small cell lung cancer.

    Chan, Ernest G; Landreneau, James R; Schuchert, Matthew J; Odell, David D; Gu, Suicheng; Pu, Jiantao; Luketich, James D; Landreneau, Rodney J

    2015-09-01

    Accurate cancer localization and negative resection margins are necessary for successful segmentectomy. In this study, we evaluate a newly developed software package that permits automated segmentation of the pulmonary parenchyma, allowing 3-dimensional assessment of tumor size, location, and estimates of surgical margins. A pilot study using a newly developed 3-dimensional computed tomography analytic software package was performed to retrospectively evaluate preoperative computed tomography images of patients who underwent segmentectomy (n = 36) or lobectomy (n = 15) for stage 1 non-small cell lung cancer. The software accomplishes an automated reconstruction of anatomic pulmonary segments of the lung based on bronchial arborization. Estimates of anticipated surgical margins and pulmonary segmental volume were made on the basis of 3-dimensional reconstruction. Autosegmentation was achieved in 72.7% (32/44) of preoperative computed tomography images with slice thicknesses of 3 mm or less. Reasons for segmentation failure included local severe emphysema or pneumonitis, and lower computed tomography resolution. Tumor segmental localization was achieved in all autosegmented studies. The 3-dimensional computed tomography analysis provided a positive predictive value of 87% in predicting a marginal clearance greater than 1 cm and a 75% positive predictive value in predicting a margin to tumor diameter ratio greater than 1 in relation to the surgical pathology assessment. This preoperative 3-dimensional computed tomography analysis of segmental anatomy can confirm the tumor location within an anatomic segment and aid in predicting surgical margins. This 3-dimensional computed tomography information may assist in the preoperative assessment regarding the suitability of segmentectomy for peripheral lung cancers. Published by Elsevier Inc.

  12. A review of nano-optics in metamaterial hybrid heterostructures

    Singh, Mahi R. [Department of Physics and Astronomy, Western University, London N6G 3K7 (Canada)

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  13. Photogrammetric measurement of two-dimensional small-amplitude waves; Hakuso suiryu no nijigen bisho shinpukuha no shashin sokuryoho ni yoru sokutei

    Yoshino, F. [Tottori University, Tottori (Japan). Faculty of Engineering; Urata, K. [Hitachi Zosen Corp., Osaka (Japan); Kishi, H.

    1996-01-25

    A photogrammetric measurement method for two-dimensional small-amplitude waves were proposed where a diffuse reflection spot is used as an index point. An equation used to obtain the still water depth was introduced. This equation was confirmed experimentally by using a laser displacement sensor which is equivalent to a camera-index-point system in principle. To confirm the applicability of this method to waves form measurement, numerical simulations of measurement by this method were carried out for sinusoidal waves and a composed wave. The results of these simulations show that the small-amplitude waves can be measured with sufficient accuracy when the water surface inclination is small. 4 refs., 14 figs., 1 tab.

  14. Topological excitations in semiconductor heterostructures

    Koushik, R.; Mukerjee, Subroto; Ghosh, Arindam; Baenninger, Matthias; Narayan, Vijay; Pepper, Michael; Farrer, Ian; Ritchie, David A.

    2013-01-01

    Topological defects play an important role in the melting phenomena in two-dimensions. In this work, we report experimental observation of topological defect induced melting in two-dimensional electron systems (2DES) in the presence of strong Coulomb interaction and disorder. The phenomenon is characterised by measurement of conductivity which goes to zero in a Berezinskii-Kosterlitz-Thouless like transition. Further evidence is provided via low-frequency conductivity noise measurements

  15. Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors.

    Yunus, Rozan Mohamad; Endo, Hiroko; Tsuji, Masaharu; Ago, Hiroki

    2015-10-14

    Heterostructures of two-dimensional (2D) layered materials have attracted growing interest due to their unique properties and possible applications in electronics, photonics, and energy. Reduction of the dimensionality from 2D to one-dimensional (1D), such as graphene nanoribbons (GNRs), is also interesting due to the electron confinement effect and unique edge effects. Here, we demonstrate a bottom-up approach to grow vertical heterostructures of MoS2 and GNRs by a two-step chemical vapor deposition (CVD) method. Single-layer GNRs were first grown by ambient pressure CVD on an epitaxial Cu(100) film, followed by the second CVD process to grow MoS2 over the GNRs. The MoS2 layer was found to grow preferentially on the GNR surface, while the coverage could be further tuned by adjusting the growth conditions. The MoS2/GNR nanostructures show clear photosensitivity to visible light with an optical response much higher than that of a 2D MoS2/graphene heterostructure. The ability to grow a novel 1D heterostructure of layered materials by a bottom-up CVD approach will open up a new avenue to expand the dimensionality of the material synthesis and applications.

  16. Vertical-Cavity In-plane Heterostructures: Physics and Applications

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-01-01

    We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined...... by the well width and barrier height. We show that in vertical-cavity in-plane heterostructures, anisotropic dispersion curvatures plays a key role as well, leading to exotic effects such as a photonic well with conduction band like well and a valence band like barrier. We investigate three examples...

  17. Vertical electron transport in van der Waals heterostructures with graphene layers

    Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Aleshkin, V. Ya.; Dubinov, A. A.; Mitin, V.; Shur, M. S.

    2015-01-01

    We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures

  18. Thermal stability and thermal conductivity of phosphorene in phosphorene/graphene van der Waals heterostructures.

    Pei, Qing-Xiang; Zhang, Xiaoliang; Ding, Zhiwei; Zhang, Ying-Yan; Zhang, Yong-Wei

    2017-07-14

    Phosphorene, a new two-dimensional (2D) semiconducting material, has attracted tremendous attention recently. However, its structural instability under ambient conditions poses a great challenge to its practical applications. A possible solution for this problem is to encapsulate phosphorene with more stable 2D materials, such as graphene, forming van der Waals heterostructures. In this study, using molecular dynamics simulations, we show that the thermal stability of phosphorene in phosphorene/graphene heterostructures can be enhanced significantly. By sandwiching phosphorene between two graphene sheets, its thermally stable temperature is increased by 150 K. We further study the thermal transport properties of phosphorene and find surprisingly that the in-plane thermal conductivity of phosphorene in phosphorene/graphene heterostructures is much higher than that of the free-standing one, with a net increase of 20-60%. This surprising increase in thermal conductivity arises from the increase in phonon group velocity and the extremely strong phonon coupling between phosphorene and the graphene substrate. Our findings have an important meaning for the practical applications of phosphorene in nanodevices.

  19. Ultrafast strain engineering in complex oxide heterostructures

    Popovich, Paul; Caviglia, Andrea; Hu, Wanzheng; Bromberger, Hubertus; Singla, Rashmi; Mitrano, Matteo; Hoffmann, Matthias C.; Kaiser, Stefan; Foerst, Michael [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Scherwitzl, Raoul; Zubko, Pavlo; Gariglio, Sergio; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneve 4, Geneva (Switzerland); Cavalleri, Andrea [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom)

    2012-07-01

    The mechanical coupling between the substrate and the thin film is expected to be effective on the ultrafast timescale, and could be exploited for the dynamic control of materials properties. Here, we demonstrate that a large-amplitude mid-infrared field, made resonant with a stretching mode of the substrate, can switch the electronic properties of a thin film across an interface. Exploiting dynamic strain propagation between different components of a heterostructure, insulating antiferromagnetic NdNiO{sub 3} is driven through a prompt, five-order-of-magnitude increase of the electrical conductivity, with resonant frequency and susceptibility that is controlled by choice of the substrate material. Vibrational phase control, extended here to a wide class of heterostructures and interfaces, may be conductive to new strategies for electronic phase control at THz repetition rates.

  20. Multiple scattering theory for superconducting heterostructures

    Ujfalussy, Balazs [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We generalize the screened Korringa-Kohn-Rostoker method for solving the corresponding Kohn-Sham-Bogoliubov-de Gennes equations for surfaces and interfaces. As an application of the theory, we study the quasiparticle spectrum of Au overlayers on a Nb(100) host. We find that within the superconducting gap region, the quasiparticle spectrum consists of Andreev bound states with a dispersion which is closely connected to the underlying electronic structure of the overlayer. We also find that the spectrum has a strongly k-dependent induced gap. The properties of the gap are discussed in relation to the thickness of the overlayer, and it is shown that certain states do not participate in the Andreev scattering process. From the thickness dependence of the gap size we calculate the superconducting critical temperature of Au/Nb(100) heterostructures what we compare with with experiments. Moreover, predictions are made for similar heterostructures of other compounds.

  1. Graphene diamond-like carbon films heterostructure

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-01-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  2. Voltage control of magnetism in multiferroic heterostructures.

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  3. Validation of the blurring of a small object on CT images calculated on the basis of three-dimensional spatial resolution

    Okubo, Masaki; Wada, Shinichi; Saito, Masatoshi

    2005-01-01

    We determine three-dimensional (3D) blurring of a small object on computed tomography (CT) images calculated on the basis of 3D spatial resolution. The images were characterized by point spread function (PSF), line spread function (LSF) and slice sensitivity profile (SSP). In advance, we systematically arranged expressions in the model for the imaging system to calculate 3D images under various conditions of spatial resolution. As a small object, we made a blood vessel phantom in which the direction of the vessel was not parallel to either the xy scan-plane or the z-axis perpendicular to the scan-plane. Therefore, when scanning the phantom, non-sharpness must be induced in all axes of the image. To predict the image blurring of the phantom, 3D spatial resolution is essential. The LSF and SSP were measured on our scanner, and two-dimensional (2D) PSF in the scan-plane was derived from the LSF by solving an integral equation. We obtained 3D images by convolving the 3D object-function of the phantom with both 2D PSF and SSP, corresponding to the 3D convolution. Calculated images showed good agreement with scanned images. Our technique of determining 3D blurring offers an accuracy advantage in 3D shape (size) and density measurements of small objects. (author)

  4. Application of Metal Oxide Heterostructures in Arsenic Removal from Contaminated Water

    Lei Chen

    2014-01-01

    Full Text Available It has become one of the major environmental problems for people worldwide to be exposed to high arsenic concentrations through contaminated drinking water, and even the long-term intake of small doses of arsenic has a carcinogenic effect. As an efficient and economic approach for the purification of arsenic-containing water, the adsorbents in adsorption processes have been widely studied. Among a variety of adsorbents reported, the metal oxide heterostructures with high surface area and specific affinity for arsenic adsorption from aqueous systems have demonstrated a promising performance in practical applications. This review paper aims to summarize briefly the metal oxide heterostructures in arsenic removal from contaminated water, so as to provide efficient, economic, and robust solutions for water purification.

  5. Correlated electronic properties of different SrIrO{sub 3}/SrTiO{sub 3} heterostructures

    Kraberger, Gernot J.; Aichhorn, Markus [Institute of Theoretical and Computational Physics, NAWI Graz, Graz University of Technology, Petersgasse 16, 8010 Graz (Austria)

    2016-07-01

    Strontium iridates are materials that combine strong electronic correlations with pronounced spin-orbit coupling, giving rise to fascinating physical properties. Strategies to purposefully influence and design these materials are a crucial step to further advance this field. A highly promising candidate for achieving this goal is the formation of heterostructures with other materials. Motivated by this quest, we perform calculations within the DFT+DMFT framework to investigate how the geometry of heterostructures of perovskite SrIrO{sub 3} with SrTiO{sub 3} influences their correlated electronic structure. We explore the differences between (001)- and (111)-stacked heterostructures, where the latter are particularly interesting because they form buckled honeycomb lattices that have non-trivial topological properties. For the (001)-heterostructures the effect of varying the thickness of the SrIrO{sub 3} layers, and thus their effective dimensionality, are studied. As an important ingredient we have to consider the effect of lattice distortions - in the form of a rotation of the oxygen cages - on the electronic correlations. We argue how the interplay of all these factors together allows a targeted modification of the electronic properties of the material.

  6. Designing in-plane heterostructures of quantum spin Hall insulators from first principles: 1T'-MoS2 with adsorbates

    Olsen, Thomas

    2016-01-01

    opportunity to change the local topology by adsorption of atoms or molecules and thus comprise an ideal platform for designing topological heterostructures. Here we apply first-principles calculations to show that the quantum spin Hall insulator 1T'-MoS2 exhibits a phase transition to a trivial insulator upon....... This is in sharp contrast to topological edge states, which typically exhibit strong dispersion that are sensitive to a particular edge termination. The heterostructure is also suggestive of a simple design of one-dimensional metallic networks in sheets of 1T'-MoS2....

  7. Heterostructures of phosphorene and transition metal dichalcogenides for excitonic solar cells: A first-principles study

    Ganesan, Vellayappan Dheivanayagam; Shen, Lei; Linghu, Jiajun; Zhang, Chun; Feng, Yuan Ping

    2016-01-01

    Using the many-body perturbation GW theory, we study the quasiparticle conduction-band offsets of phosphorene, a two-dimensional atomic layer of black phosphorus, and transition-metal dichalcogenides (TMDs). The calculated large exciton binding energies of phosphorene and TMDs indicate that their type-II heterostructures are suitable for excitonic thin-film solar cell applications. Our results show that these heterojunctions have a potential maximum power conversion efficiency of up to 12%, which can be further enhanced up to 20% by strain engineering.

  8. Heterostructures of phosphorene and transition metal dichalcogenides for excitonic solar cells: A first-principles study

    Ganesan, Vellayappan Dheivanayagam; Shen, Lei, E-mail: shenlei@nus.edu.sg [Engineering Science Programme, National University of Singapore, 9 Engineering Drive 1, Singapore 117575 (Singapore); Linghu, Jiajun; Zhang, Chun; Feng, Yuan Ping [Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2016-03-21

    Using the many-body perturbation GW theory, we study the quasiparticle conduction-band offsets of phosphorene, a two-dimensional atomic layer of black phosphorus, and transition-metal dichalcogenides (TMDs). The calculated large exciton binding energies of phosphorene and TMDs indicate that their type-II heterostructures are suitable for excitonic thin-film solar cell applications. Our results show that these heterojunctions have a potential maximum power conversion efficiency of up to 12%, which can be further enhanced up to 20% by strain engineering.

  9. Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells

    Aleshkin, V.Ya.; Andreev, B.A.; Gavrilenko, V.I.; Erofeeva, I.V.; Kozlov, D.V.; Kuznetsov, O.A.

    2000-01-01

    Dependence of acceptor localized state energies in quantum wells (strained layers of Ge in heterostructures Ge/Ge 1-x Si x ) on the width of quantum well and position in it was studied theoretically. Spectrum of impurity absorption in the far infrared range was calculated. Comparison of the results calculated and observed photoconductivity spectra permits estimating acceptor distribution over quantum well and suggesting conclusion that acceptors can be largely concentrated near heteroboundaries. Absorption spectrum was calculated bearing in mind resonance impurity states, which permits explaining the observed specific features in the photoconductivity spectrum short-wave range by transition to resonance energy levels, bound to upper subzones of dimensional quantization [ru

  10. Printable Transfer-Free and Wafer-Size MoS2/Graphene van der Waals Heterostructures for High-Performance Photodetection.

    Liu, Qingfeng; Cook, Brent; Gong, Maogang; Gong, Youpin; Ewing, Dan; Casper, Matthew; Stramel, Alex; Wu, Judy

    2017-04-12

    Two-dimensional (2D) MoS 2 /graphene van der Waals heterostructures integrate the superior light-solid interaction in MoS 2 and charge mobility in graphene for high-performance optoelectronic devices. Key to the device performance lies in a clean MoS 2 /graphene interface to facilitate efficient transfer of photogenerated charges. Here, we report a printable and transfer-free process for fabrication of wafer-size MoS 2 /graphene van der Waals heterostructures obtained using a metal-free-grown graphene, followed by low-temperature growth of MoS 2 from the printed thin film of ammonium thiomolybdate on graphene. The photodetectors based on the transfer-free MoS 2 /graphene heterostructures exhibit extraordinary short photoresponse rise/decay times of 20/30 ms, which are significantly faster than those of the previously reported MoS 2 /transferred-graphene photodetectors (0.28-1.5 s). In addition, a high photoresponsivity of up to 835 mA/W was observed in the visible spectrum on such transfer-free MoS 2 /graphene heterostructures, which is much higher than that of the reported photodetectors based on the exfoliated layered MoS 2 (0.42 mA/W), the graphene (6.1 mA/W), and transfer-free MoS 2 /graphene/SiC heterostructures (∼40 mA/W). The enhanced performance is attributed to the clean interface on the transfer-free MoS 2 /graphene heterostructures. This printable and transfer-free process paves the way for large-scale commercial applications of the emerging 2D heterostructures in optoelectronics and sensors.

  11. Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al xGa1-xN/GaN heterostructures

    Han, K.; Shen, B.; Tang, N.; Tang, Y.Q.; He, X.W.; Qin, Z.X.; Yang, Z.J.; Zhang, G.Y.; Lin, T.; Zhu, B.; Zhou, W.Z.; Chu, J.H.

    2007-01-01

    Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in Al x Ga 1-x N/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in Al x Ga 1-x N/GaN heterostructures, is much higher than the theoretical prediction

  12. Small Core, Big Network: A Comprehensive Approach to GIS Teaching Practice Based on Digital Three-Dimensional Campus Reconstruction

    Cheng, Liang; Zhang, Wen; Wang, Jiechen; Li, Manchun; Zhong, Lishan

    2014-01-01

    Geographic information science (GIS) features a wide range of disciplines and has broad applicability. Challenges associated with rapidly developing GIS technology and the currently limited teaching and practice materials hinder universities from cultivating highly skilled GIS graduates. Based on the idea of "small core, big network," a…

  13. Synthesis of Metal-Oxide/Carbon-Fiber Heterostructures and Their Properties for Organic Dye Removal and High-Temperature CO2 Adsorption

    Shao, Liangzhi; Nie, Shibin; Shao, Xiankun; Zhang, LinLin; Li, Benxia

    2018-03-01

    One-dimensional metal-oxide/carbon-fiber (MO/CF) heterostructures were prepared by a facile two-step method using the natural cotton as a carbon source the low-cost commercial metal salts as precursors. The metal oxide nanostructures were first grown on the cotton fibers by a solution chemical deposition, and the metal-oxide/cotton heterostructures were then calcined and carbonized in nitrogen atmosphere. Three typical MO/CF heterostructures of TiO2/CF, ZnO/CF, and Fe2O3/CF were prepared and characterized. The loading amount of the metal oxide nanostructures on carbon fibers can be tuned by controlling the concentration of metal salt in the chemical deposition process. Finally, the performance of the as-obtained MO/CF heterostructures for organic dye removal from water was tested by the photocatalytic degradation under a simulated sunlight, and their properties of high-temperature CO2 adsorption were predicted by the temperature programmed desorption. The present study would provide a desirable strategy for the synthesis of MO/CF heterostructures for various applications.

  14. Application of a three-dimensional model for assessing effects of small clear-cuttings on radiation and soil temperature

    Olchev, A.; Radler, K.; Sogachev, Andrey

    2009-01-01

    , solar radiation, wind speed and direction, soil temperatures at 10 and 20 cm depth were measured by five automatic stations within the clear-cut area. One reference station was placed about 100 m from the clear-cut inside the forest stand. Comparisons of modelled and measured solar radiation fluxes...... and soil temperature profiles showed that the model adequately describes the spatial heterogeneity and dynamics of these variables under different weather conditions. The model can be used to explore solar radiation and soil temperature patterns within heterogeneous forest plots, with applications......A three-dimensional model Mixfor-3D of soil–vegetation–atmosphere transfer (SVAT) was developed and applied to estimate possible effects of tree clear-cutting on radiation and soil temperature regimes of a forest ecosystem. The Mixfor-3D model consists of several closely coupled 3D sub...

  15. Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

    Ding, Yi-Min; Shi, Jun-Jie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang

    2017-10-05

    To enhance the low hole mobility (∼40 cm 2 V -1 s -1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V -1 s -1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V -1 s -1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V -1 s -1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

  16. Size and strain tunable band alignment of black-blue phosphorene lateral heterostructures.

    Li, Yan; Ma, Fei

    2017-05-17

    Single-element lateral heterostructures composed of black and blue phosphorene are not only free from lattice mismatch but also exhibit rich physical properties related to the seamlessly stitched interfaces, providing the building blocks for designing atomically thin devices. Using first-principles calculations, we investigate the influence of interface structure, size effect and strain engineering on the electronic structure, effective masses and band alignment of black-blue phosphorene lateral heterostructures. The lateral heterostructure with an octatomic-ring interface presents a strong metallic feature due to the interface states, while a metal-semiconductor transition takes place in the system with a hexatomic-ring interface upon hydrogen passivation. Following a reciprocal scaling law, the band gap is tuned in a wide energy range by synchronously increasing the widths of black and blue phosphorene or by only widening that of black phosphorene. Moreover, type-II band alignment is observed in the width ranges of 2.0-3.1 nm and 3.7-4.2 nm, out of which it is type-I. However, the band gap and effective masses show small changes if only the width of blue phosphorene is altered. When the lateral heterostructure is tensile loaded, the effective mass ratio of hole to electron is enlarged by an order of magnitude at a strain of 4% along the zigzag direction. Meanwhile, the band alignment undergoes a crossover from type-I to type-II at a strain of 2%, facilitating efficient electron-hole separation for light detection and harvesting.

  17. Anomalous conductivity noise in gapped bilayer graphene heterostructure

    Aamir, Mohammed Ali; Karnatak, Paritosh; Sai, T. Phanindra; Ghosh, Arindam

    Bilayer graphene has unique electronic properties - it has a tunable band gap and also, valley symmetry and pseudospin degree of freedom like its single layer counterpart. In this work, we present a study of conductance fluctuations in dual gated bilayer graphene heterostructures by varying the Fermi energy and the band gap independently. At a fixed band gap, we find that the conductance fluctuations obtained by Fermi energy ensemble sampling increase rapidly as the Fermi energy is tuned to charge neutrality point (CNP) whereas the time-dependent conductance fluctuations diminish rapidly. This discrepancy is completely absent at higher number densities, where the transport is expected to be through the 2D bulk of the bilayer system. This observation indicates that near the CNP, electrical transport is highly sensitive to Fermi energy, but becomes progressively immune to time-varying disorder. A possible explanation may involve transport via edge states which becomes the dominant conduction mechanism when the bilayer graphene is gapped and Fermi energy is situated close to the CNP, thereby causing a dimensional crossover from 2D to 1D transport. Our experiment outlines a possible experimental protocol to probe intrinsic topological states in gapped bilayer graphene.

  18. Exciton broadening in WS2 /graphene heterostructures

    Hill, Heather M.; Rigosi, Albert F.; Raja, Archana

    2017-01-01

    Here, we have used optical spectroscopy to observe spectral broadening of WS 2 exciton reflectance peaks in heterostructures of monolayer WS 2 capped with mono- to few-layer graphene. The broadening is found to be similar for the A and B excitons and on the order of 5–10 meV. No strong dependence on the number of graphene layers was observed within experimental uncertainty. The broadening can be attributed to charge- and energy-transfer processes between the two materials, providing an observed lower bound for the corresponding time scales of 65 fs.

  19. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-01-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov–de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov–de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of

  20. Three-dimensional measurement of small inner surface profiles using feature-based 3-D panoramic registration

    Gong, Yuanzheng; Seibel, Eric J.

    2017-01-01

    Rapid development in the performance of sophisticated optical components, digital image sensors, and computer abilities along with decreasing costs has enabled three-dimensional (3-D) optical measurement to replace more traditional methods in manufacturing and quality control. The advantages of 3-D optical measurement, such as noncontact, high accuracy, rapid operation, and the ability for automation, are extremely valuable for inline manufacturing. However, most of the current optical approaches are eligible for exterior instead of internal surfaces of machined parts. A 3-D optical measurement approach is proposed based on machine vision for the 3-D profile measurement of tiny complex internal surfaces, such as internally threaded holes. To capture the full topographic extent (peak to valley) of threads, a side-view commercial rigid scope is used to collect images at known camera positions and orientations. A 3-D point cloud is generated with multiview stereo vision using linear motion of the test piece, which is repeated by a rotation to form additional point clouds. Registration of these point clouds into a complete reconstruction uses a proposed automated feature-based 3-D registration algorithm. The resulting 3-D reconstruction is compared with x-ray computed tomography to validate the feasibility of our proposed method for future robotically driven industrial 3-D inspection.

  1. A two-dimensional liquid-filled ionization chamber array prototype for small-field verification: characterization and first clinical tests

    Brualla-González, Luis; Vicedo, Aurora; Roselló, Joan V; Gómez, Faustino; González-Castaño, Diego M; Gago-Arias, Araceli; Pazos, Antonio; Zapata, Martín; Pardo-Montero, Juan

    2012-01-01

    In this work we present the design, characterization and first clinical tests of an in-house developed two-dimensional liquid-filled ionization chamber prototype for the verification of small radiotherapy fields and treatments containing such small fields as in radiosurgery, which consists of 2 mm × 2 mm pixels arranged on a 16×8 rectangular grid. The ionization medium is isooctane. The characterization of the device included the study of depth, field-size and dose-rate dependences, which are sufficiently moderate for a good operation at therapy radiation levels. However, the detector presents an important anisotropic response, up to ≃ 12% for front versus near-lateral incidence, which can impact the verification of full treatments with different incidences. In such a case, an anisotropy correction factor can be applied. Output factors of small square fields measured with the device show a small systematic over-response, less than 1%, when compared to unshielded diode measurements. An IMRT radiosurgery treatment has been acquired with the liquid-filled ionization chamber device and compared with film dosimetry by using the gamma method, showing good agreement: over 99% passing rates for 1.2% and 1.2 mm for an incidence-per-incidence analysis; 100% passing rates for tolerances 1.8% and 1.8 mm when the whole treatment is analysed and the anisotropy correction factor is applied. The point dose verification for each incidence of the treatment performed with the liquid-filled ionization chamber agrees within 1% with a CC01 ionization chamber. This prototype has shown the utility of this kind of technology for the verification of small fields/treatments. Currently, a larger device covering a 5 cm × 5 cm area is under development. (paper)

  2. Magnetization control in multifunctional heterostructures

    Althammer, M.; Gross, R.; Goennenwein, S.T.B. [Walther-Meissner-Institut, Garching (Germany); Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Garching (Germany); Schoch, W.; Limmer, W. [Institut fuer Halbleiterphysik, Ulm (Germany)

    2009-07-01

    The functionality of magnetoelectronic devices depends on the efficiency and scalabilty of magnetization control schemes. We here discuss the voltage control of magnetization orientation via the magnetoelastic channel in ferromagnetic semiconductor/piezoelectric actuator hybrid structures. The hybrids consist of a thin Ga{sub 0.955}Mn{sub 0.045}As film cemented onto a piezoelectric actuator. Using anisotropic magnetoresistance techniques, we have quantitatively determined the magnetic anisotropy within the plane of the Ga{sub 0.955}Mn{sub 0.045}As films. Exploiting the substantial changes of the magnetic anisotropy in Ga{sub 0.955}Mn{sub 0.045}As as a function of temperature T, different ratios between the magnetoelastic and the magnetocrystalline anisotropies can be realized in one and the same sample. At T=5 K the magnetoelastic anisotropy term is only a small contribution to the total anisotropy, so that only the coercive fields are slightly modified as a function of the control voltage. For T=50 K the magnetoelastic contribution dominates the magnetic anisotropy which allows to achieve a voltage control of the magnetization orientation by about 70 {sup circle}.

  3. 1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

    Karpiak, Bogdan; Dankert, André; Cummings, Aron W.; Power, Stephen R.; Roche, Stephan; Dash, Saroj P.

    2018-03-01

    We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron- and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contact-induced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be an additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which needs further investigation. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts.

  4. Efficient Ab-Initio Electron Transport Calculations for Heterostructures by the Nonequilibrium Green’s Function Method

    Hirokazu Takaki

    2014-01-01

    Full Text Available We present an efficient computation technique for ab-initio electron transport calculations based on density functional theory and the nonequilibrium Green’s function formalism for application to heterostructures with two-dimensional (2D interfaces. The computational load for constructing the Green’s functions, which depends not only on the energy but also on the 2D Bloch wave vector along the interfaces and is thus catastrophically heavy, is circumvented by parallel computational techniques with the message passing interface, which divides the calculations of the Green’s functions with respect to energy and wave vectors. To demonstrate the computational efficiency of the present code, we perform ab-initio electron transport calculations of Al(100-Si(100-Al(100 heterostructures, one of the most typical metal-semiconductor-metal systems, and show their transmission spectra, density of states (DOSs, and dependence on the thickness of the Si layers.

  5. Characterization of GaAs and hetero-structures of GaAs-(AlGa)As films, by Hall effect

    Diniz, R.P.

    1989-08-01

    Hall effect measurements were performed on a series of semiconductor gallium arsenide (GaAs) films, intentionally or unitentionally doped, grown by molecular beam epitaxy (MBE). These measurements made possible both the evaluation of the films quality and the calibration of the dopants (Si and Be) effusion cells on the growing machine. Measurements on modulation doped single interface heterostructures also grown by MBE followed. The two dimensional electron gas in the heterostructures shows low temperature high mobility. The application of a strong magnetic field perpendicular to the plane of the gas eliminated its degrees of freedom completely and permitted the observation of Schubnikov-deHaas oscillations and integer quantum Hall effect. During the work we have deviced and developed apparatus in order to make ohmic contacts and perform litography to semiconductors. (author) [pt

  6. Accumulation of fluorine in CF4 plasma-treated AlGaN/GaN heterostructure interface: An experimental investigation

    Basu, Anirban; Adesida, Ilesanmi

    2009-01-01

    The impact of CF 4 plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaN/GaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed

  7. Photonic slab heterostructures based on opals

    Palacios-Lidon, Elisa; Galisteo-Lopez, Juan F.; Juarez, Beatriz H.; Lopez, Cefe

    2004-09-01

    In this paper the fabrication of photonic slab heterostructures based on artificial opals is presented. The innovated method combines high-quality thin-films growing of opals and silica infiltration by Chemical Vapor Deposition through a multi-step process. By varying structure parameters, such as lattice constant, sample thickness or refractive index, different heterostructures have been obtained. The optical study of these systems, carried out by reflectance and transmittance measurements, shows that the prepared samples are of high quality further confirmed by Scanning Electron Microscopy micrographs. The proposed novel method for sample preparation allows a high control of the involved structure parameters, giving the possibility of tunning their photonic behavior. Special attention in the optical response of these materials has been addressed to the study of planar defects embedded in opals, due to their importance in different photonic fields and future technological applications. Reflectance and transmission measurements show a sharp resonance due to localized states associated with the presence of planar defects. A detailed study of the defect mode position and its dependance on defect thickness and on the surrounding photonic crystal is presented as well as evidence showing the scalability of the problem. Finally, it is also concluded that the proposed method is cheap and versatile allowing the preparation of opal-based complex structures.

  8. Organic p-n heterostructures and superlattices

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  9. Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

    Pryds, Nini

    2015-01-01

    The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

  10. Phase II study of radiotherapy with three-dimensional conformal boost concurrent with paclitaxel and cisplatin for Stage IIIB non-small-cell lung cancer

    Kim, Young Seok; Yoon, Sang Min; Choi, Eun Kyung; Yi, Byong Yong; Kim, Jong Hoon; Ahn, Seung Do; Lee, Sang-wook; Shin, Seong Soo; Lee, Jung Shin; Suh, Cheolwon; Kim, Sang-We; Kim, Dong Soon; Kim, Woo Sung; Park, Heon Joo; Park, Charn Il

    2005-01-01

    Purpose: To evaluate the efficacy and toxicity of concurrent chemoradiotherapy with paclitaxel/cisplatin for Stage IIIB locally advanced non-small-cell lung cancer (NSCLC). Methods and Materials: Radiotherapy was administered to a total dose of 70.2 Gy (daily fraction of 1.8 Gy, 5 days/wk), over an 8-week period, combined with chemotherapy. The chemotherapy consisted of weekly 40 mg/m 2 of paclitaxel plus 20 mg/m 2 of cisplatin for 8 consecutive weeks. All patients received three-dimensional conformal radiotherapy (3D-CRT), based on computed tomography simulated planning after 41.4 Gy. The median follow-up period of survivors was 24 months. Results: Between January 2000 and October 2002, 135 patients with a median age of 60 years were enrolled and analyzed in this prospective trial. The overall response rate was 75% including 2 cases of complete response. The major patterns of failure were local failure and distant metastasis. The 2-year overall and progression-free survival rates were 37% and 18%, respectively. The median overall and progression-free survival times were 17 months and 9 months, respectively. Hematologic toxicity >Grade 2 was observed in 19% of patients and severe non-hematologic toxicity was infrequent. Conclusions: Three-dimensional conformal radiotherapy, combined with paclitaxel and cisplatin chemotherapy, was associated with a satisfactory outcome with manageable toxicity. Further investigations are needed to improve the local control

  11. Recent advances in synthesis of three-dimensional porous graphene and its applications in construction of electrochemical (bio)sensors for small biomolecules detection.

    Lu, Lu

    2018-07-01

    Electrochemical (bio)sensors have attracted much attention due to their high sensitivity, fast response time, biocompatibility, low cost and easy miniaturization. Specially, ever-growing necessity and interest have given rise to the fast development of electrochemical (bio)sensors for the detection of small biomolecules. They play enormous roles in the life processes with various biological function, such as life signal transmission, genetic expression and metabolism. Moreover, their amount in body can be used as an indicator for diagnosis of many diseases. For example, an abnormal concentration of blood glucose can indicate hyperglycemia or hypoglycemia. Graphene (GR) shows great applications in electrochemical (bio)sensors. Compared with two-dimensional (2D) GR that is inclined to stack together due to the strong π-π interaction, monolithic 3D porous GR has larger specific area, superior mechanical strength, better stability, higher conductivity and electrocatalytic activity. So they attracted more and increasing attention as sensing materials for small biomolecules. This review focuses on the recent advances and strategies in the fabrication methods of 3D porous GR and the development of various electrochemical (bio)sensors based on porous GR and its nanocomposites for the detection of small biomolecules. The challenges and future efforts direction of high-performance electrochemical (bio)sensors based on 3D porous GR for more sensitive analysis of small biomolecules are discussed and proposed. It will give readers an overall understanding of their progress and provide some theoretical guidelines for their future efforts and development. Copyright © 2018 Elsevier B.V. All rights reserved.

  12. Construction of a Holliday Junction in Small Circular DNA Molecules for Stable Motifs and Two-Dimensional Lattices.

    Guo, Xin; Wang, Xue-Mei; Wei, Shuai; Xiao, Shou-Jun

    2018-04-12

    Design rules for DNA nanotechnology have been mostly learnt from using linear single-stranded (ss) DNA as the source material. For example, the core structure of a typical DAO (double crossover, antiparallel, odd half-turns) tile for assembling 2D lattices is constructed from only two linear ss-oligonucleotide scaffold strands, similar to two ropes making a square knot. Herein, a new type of coupled DAO (cDAO) tile and 2D lattices of small circular ss-oligonucleotides as scaffold strands and linear ss-oligonucleotides as staple strands are reported. A cDAO tile of cDAO-c64nt (c64nt: circular 64 nucleotides), shaped as a solid parallelogram, is constructed with a Holliday junction (HJ) at the center and two HJs at both poles of a c64nt; similarly, cDAO-c84nt, shaped as a crossed quadrilateral composed of two congruent triangles, is formed with a HJ at the center and four three-way junctions at the corners of a c84nt. Perfect 2D lattices were assembled from cDAO tiles: infinite nanostructures of nanoribbons, nanotubes, and nanorings, and finite nanostructures. The structural relationship between the visible lattices imaged by AFM and the corresponding invisible secondary and tertiary molecular structures of HJs, inclination angle of hydrogen bonds against the double-helix axis, and the chirality of the tile can be interpreted very well. This work could shed new light on DNA nanotechnology with unique circular tiles. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Multi-Dimensional Evaluation of Simulated Small-Scale Irrigation Intervention: A Case Study in Dimbasinia Watershed, Ghana

    Abeyou W. Worqlul

    2018-05-01

    Full Text Available This paper studied the impacts of small-scale irrigation (SSI interventions on environmental sustainability, agricultural production, and socio-economics using an Integrated Decision Support System (IDSS. The IDSS is comprised of a suite of models, namely the Soil and Water Assessment Tool (SWAT, Agricultural Policy/Environmental eXtender (APEX, and Farm Income and Nutrition Simulator (FARMSIM. The IDSS was applied in Dimbasinia watershed in northern Ghana using irrigation water from shallow groundwater. The watershed has a modest amount of shallow groundwater resources. However, the average annual irrigation water requirement exceeded the average annual shallow groundwater recharge. It was found that the current crop yield in Dimbasinia watershed was only ~40% of the potential crop production. This is mainly related to climate variability, low soil fertility, and land-management practices. For example, application of 50 kg/ha urea and 50 kg/ha DAP doubled maize and sorghum yield from the current farmers’ practices. Better income was obtained when irrigated vegetables/fodder were cultivated in rotation with sorghum as compared to in rotation with maize. Investment in solar pumps paid better dividends and also supplied clean energy. The socio-economic analysis indicated that having irrigated dry season vegetables will improve household nutrition. Since shallow groundwater recharge alone may not provide sufficient water for irrigation in a sustainable manner, surface water may be stored using water-harvesting structures to supplement the groundwater for irrigation. Integrated use of the water resources will also reduce depletion of the shallow groundwater aquifer. We conclude that IDSS is a promising tool to study gaps and constraints as well as upscaling of SSI.

  14. Proximity Induced Superconducting Properties in One and Two Dimensional Semiconductors

    Kjærgaard, Morten

    This report is concerned with the properties of one and two dimensional semiconducting materials when brought into contact with a superconductor. Experimentally we study the 2D electron gas in an InGaAs/InAs heterostructure with aluminum grown in situ on the surface, and theoretically we show tha...

  15. Noninteracting beams of ballistic two-dimensional electrons

    Spector, J.; Stormer, H.L.; Baldwin, K.W.; Pfeiffer, L.N.; West, K.W.

    1991-01-01

    We demonstrate that two beams of two-dimensional ballistic electrons in a GaAs-AlGaAs heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. This allows electrical signal channels to intersect in the same plane with negligible crosstalk between the channels

  16. Approximate Approaches to the One-Dimensional Finite Potential Well

    Singh, Shilpi; Pathak, Praveen; Singh, Vijay A.

    2011-01-01

    The one-dimensional finite well is a textbook problem. We propose approximate approaches to obtain the energy levels of the well. The finite well is also encountered in semiconductor heterostructures where the carrier mass inside the well (m[subscript i]) is taken to be distinct from mass outside (m[subscript o]). A relevant parameter is the mass…

  17. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    Watanabe, Arata, E-mail: a.watanabe.106@nitech.jp; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, Takashi, E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-12-21

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

  18. Ge/Si core/multi shell heterostructure FETs

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  19. Engineering charge transport by heterostructuring solution-processed semiconductors

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  20. Ionic conductivity in oxide heterostructures: the role of interfaces

    Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

    2010-01-01

    Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  1. Organic heterostructures based on arylenevinylene oligomers deposited by MAPLE

    Socol, M.; Preda, N.; Vacareanu, L.; Grigoras, M.; Socol, G.; Mihailescu, I. N.; Stanculescu, F.; Jelínek, Miroslav; Stanculescu, A.; Stoicanescu, M.

    2014-01-01

    Roč. 302, May (2014), s. 216-222 ISSN 0169-4332 Institutional support: RVO:68378271 Keywords : organic heterostructures * MAPLE * oligomer * optoelectronica Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  2. Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

    Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

    2017-11-01

    A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

  3. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

  4. Spin-torque generation in topological insulator based heterostructures

    Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah

    2016-01-01

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather

  5. Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

    Bezerra, Anibal T., E-mail: anibal@df.ufscar.br; Farinas, Paulo F.; Studart, Nelson [Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); DISSE - Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores, CNPq/MCT, Rio de Janeiro, RJ (Brazil); Castelano, Leonardo K. [Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); Degani, Marcos H.; Maialle, Marcelo Z. [Faculdade de Ciências Aplicadas, Universidade Estadual de Campinas, 13484-350 Limeira, SP (Brazil); DISSE - Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores, CNPq/MCT, Rio de Janeiro, RJ (Brazil)

    2014-01-13

    Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.

  6. Targetting in atelectatic lung by positron emission tomography in non-small cell lung cancer patients treated with three-dimensional conformal radiation therapy

    Wang Kai; Wang Luhua; Liang Jun; Ou Guangfei; Lu Jima

    2006-01-01

    Objective: To investigate the potential benefit of incorporating fluorodeoxyglucose positron e- mission tomography (FDG PET) to delineate tire gross tumor volume(GTV) in patients with non-small cell lung cancer (NSCLC) complicated with atelectasis who are to be treated with three-dimensional conformal radiation therapy (3DCRT). Methods: Fourteen patients histopathologically proven as having NSCLC with image diagnosed as complicated with various degrees were studied in this study. All patients were scanned with both thoracic CT and thoracic or whole body PET. The GTV was delineated basing on both CT image and PET image (CT-GTV, PET- GTV) and the volume of each GTV(designated CT-GTV and PET-GTV) was compared by 3DCRT plan. Results: Each paired CT-GTV and PET-GTV was different from each other. All patients' GTV was reduced to an average of 27 cm 3 (20.4%) with median CT-PET of 133 cm 3 (90-180 cm 3 ) and median PET-GTV of 106 cm 3 , with a in- crease of 16.9%, 22 cm 3 ). The reduction of PET-GTV was due to PET could so differ cancer-induced atelectasis from gross tumor that it reduced the tarbet volume and spared more surrounding normal tissues. Conclusions: The incorporation of FDG PET data with gross tumor delineation is able to improve the accuracy of 3DCRT for non-small cell lung cancer patients complicated with atelectasis. (authors)

  7. Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

    Guthrie, Daniel K.

    1998-09-01

    The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of

  8. Novel "203" type of heterostructured MoS2-Fe3O4-C ternary nanohybrid: Synthesis, and enhanced microwave absorption properties

    Yang, Erqi; Qi, Xiaosi; Xie, Ren; Bai, Zhongchen; Jiang, Yang; Qin, Shuijie; Zhong, Wei; Du, Youwei

    2018-06-01

    It is widely recognized that constructing multiple interface structures to enhance interface polarization is very good for the attenuation of electromagnetic (EM) wave. Here, a novel "203" type of heterostructured nanohybrid consisting of two-dimensional (2D) MoS2 nanosheets, zero-dimensional (0D) Fe3O4 nanoparticles and three-dimensional (3D) carbon layers was elaborately designed and successfully synthesized by a two-step method: Fe3O4 nanoparticles were deposited onto the surface of few-layer MoS2 nanosheets by a hydrothermal method, followed by the carbonation process by a chemical vapor deposition method. Compared to that of "20" type MoS2-Fe3O4, the as-prepared heterostructured "203" type MoS2-Fe3O4-C ternary nanohybrid exhibited remarkably enhanced EM and microwave absorption properties. And the minimum reflection loss (RL) value of the obtained MoS2-Fe3O4-C ternary nanohybrid could reach -53.03 dB at 14.4 GHz with a matching thickness of 7.86 mm. Moreover, the excellent EM wave absorption property of the as-prepared ternary nanohybrid was proved to be attributed to the quarter-wavelength matching model. Therefore, a simple and effective route was proposed to produce MoS2-based mixed-dimensional van der Waals heterostructure, which provided a new platform for the designing and production of high performance microwave absorption materials.

  9. Enhancing photoresponsivity using MoTe2-graphene vertical heterostructures

    Kuiri, Manabendra; Chakraborty, Biswanath; Paul, Arup; Das, Subhadip; Sood, A. K.; Das, Anindya

    2016-02-01

    MoTe2 with a narrow band-gap of ˜1.1 eV is a promising candidate for optoelectronic applications, especially for the near-infrared photo detection. However, the photo responsivity of few layers MoTe2 is very small (graphene vertical heterostructures have a much larger photo responsivity of ˜20 mA W-1. The trans-conductance measurements with back gate voltage show on-off ratio of the vertical transistor to be ˜(0.5-1) × 105. The rectification nature of the source-drain current with the back gate voltage reveals the presence of a stronger Schottky barrier at the MoTe2-metal contact as compared to the MoTe2-graphene interface. In order to quantify the barrier height, it is essential to measure the work function of a few layers MoTe2, not known so far. We demonstrate a method to determine the work function by measuring the photo-response of the vertical transistor as a function of the Schottky barrier height at the MoTe2-graphene interface tuned by electrolytic top gating.

  10. General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

    Higuchi, Takuya

    2011-08-19

    -VI' for semiconductors. As we will review, interfaces between different families creates a host of electrostatic issues. They can be somewhat avoided if, as in many semiconductor heterostructures, only one family is used, with small perturbations (such as n-type or p-type doping) around them. However, for most transition metal oxides, this is greatly restrictive. For example, LaMnO{sub 3} and SrMnO{sub 3} are both insulators in part due to strong electron correlations, and only in their solid solution does 'colossal magnetoresistance' emerge in bulk. Similarly, the metallic superlattice shown in Fig. 1(c) can be considered a nanoscale deconstruction of (La,Sr)TiO{sub 3} to the insulating parent compounds. Therefore the aspiration to arbitrarily mix and match perovskite components requires a basic understanding of, and ultimately control over, these issues. In this context, here we present basic electrostatic features that arise in oxide heterostructures which vary the ionic charge stacking sequence. In close relation to the analysis of the stability of polar surfaces and semiconductor heterointerfaces, the variation of the dipole moment across a heterointerface plays a key role in determining its stability. Different self-consistent assignments of the unit cell are presented, allowing the polar discontinuity picture to be recast in terms of an equivalent local charge neutrality picture. The latter is helpful in providing a common framework with which to discuss electronic reconstructions, local-bonding considerations, crystalline defects, and lattice polarization on an equal footing, all of which are the subject of extensive current investigation.

  11. Organic heterostructures deposited by MAPLE on AZO substrate

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

    2017-09-01

    Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

  12. Photoluminescence measurements of ZnO heterostructures

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  13. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  14. Biomechanical evaluation of one-piece and two-piece small-diameter dental implants: In-vitro experimental and three-dimensional finite element analyses.

    Wu, Aaron Yu-Jen; Hsu, Jui-Ting; Chee, Winston; Lin, Yun-Te; Fuh, Lih-Jyh; Huang, Heng-Li

    2016-09-01

    Small-diameter dental implants are associated with a higher risk of implant failure. This study used both three-dimensional finite-element (FE) simulations and in-vitro experimental tests to analyze the stresses and strains in both the implant and the surrounding bone when using one-piece (NobelDirect) and two-piece (NobelReplace) small-diameter implants, with the aim of understanding the underlying biomechanical mechanisms. Six experimental artificial jawbone models and two FE models were prepared for one-piece and two-piece 3.5-mm diameter implants. Rosette strain gauges were used for in-vitro tests, with peak values of the principal bone strain recorded with a data acquisition system. Implant stability as quantified by Periotest values (PTV) were also recorded for both types of implants. Experimental data were analyzed statistically using Wilcoxon's rank-sum test. In FE simulations, the peak value and distribution of von-Mises stresses in the implant and bone were selected for evaluation. In in-vitro tests, the peak bone strain was 42% lower for two-piece implants than for one-piece implants. The PTV was slightly lower for one-piece implants (PTV = -6) than for two-piece implants (PTV = -5). In FE simulations, the stresses in the bone and implant were about 23% higher and 12% lower, respectively, for one-piece implants than those for two-piece implants. Due to the higher peri-implant bone stresses and strains, one-piece implants (NobelDirect) might be not suitable for use as small-diameter implants. Copyright © 2016. Published by Elsevier B.V.

  15. Decomposition and forecasting analysis of China's energy efficiency: An application of three-dimensional decomposition and small-sample hybrid models

    Meng, Ming; Shang, Wei; Zhao, Xiaoli; Niu, Dongxiao; Li, Wei

    2015-01-01

    The coordinated actions of the central and the provincial governments are important in improving China's energy efficiency. This paper uses a three-dimensional decomposition model to measure the contribution of each province in improving the country's energy efficiency and a small-sample hybrid model to forecast this contribution. Empirical analysis draws the following conclusions which are useful for the central government to adjust its provincial energy-related policies. (a) There are two important areas for the Chinese government to improve its energy efficiency: adjusting the provincial economic structure and controlling the number of the small-scale private industrial enterprises; (b) Except for a few outliers, the energy efficiency growth rates of the northern provinces are higher than those of the southern provinces; provinces with high growth rates tend to converge geographically; (c) With regard to the energy sustainable development level, Beijing, Tianjin, Jiangxi, and Shaanxi are the best performers and Heilongjiang, Shanxi, Shanghai, and Guizhou are the worst performers; (d) By 2020, China's energy efficiency may reach 24.75 thousand yuan per ton of standard coal; as well as (e) Three development scenarios are designed to forecast China's energy consumption in 2012–2020. - Highlights: • Decomposition and forecasting models are used to analyze China's energy efficiency. • China should focus on the small industrial enterprises and local protectionism. • The energy sustainable development level of each province is evaluated. • Geographic distribution characteristics of energy efficiency changes are revealed. • Future energy efficiency and energy consumption are forecasted

  16. Light-matter interaction in transition metal dichalcogenides and their heterostructures

    Wurstbauer, Ursula; Miller, Bastian; Parzinger, Eric; Holleitner, Alexander W.

    2017-05-01

    The investigation of two-dimensional (2D) van der Waals materials is a vibrant, fast-moving and still growing interdisciplinary area of research. These materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers, and have a variety of different electronic, optical and mechanical properties. Transition metal dichalcogenides are a very prominent class of 2D materials, particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-) catalytic and mechanical stability, and exotic many-body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light-matter interaction, providing a high sunlight absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments, and access to excitonic phenomena in van der Waals heterostructures. This review focuses on the light-matter interaction in MoS2, WS2, MoSe2 and WSe2, which is dictated by the materials’ complex dielectric functions, and on the multiplicity of studying the first-order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. 2D materials provide an interesting platform for stacking them into van der Waals heterostructures without the limitation of lattice mismatch, resulting in novel devices for applications but also to enable the study of exotic many-body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting transition metal dichalcogenides and their heterostructures for applications in optoelectronic devices will be examined, and routes to study emergent fundamental problems and many-body quantum phenomena under excitations with photons will be discussed.

  17. Comparison of internal target volumes defined on 3-dimensional, 4-dimensonal, and cone-beam CT images of non-small-cell lung cancer

    Li F

    2016-11-01

    Full Text Available Fengxiang Li,1 Jianbin Li,1 Zhifang Ma,1 Yingjie Zhang,1 Jun Xing,1 Huanpeng Qi,1 Dongping Shang21Department of Radiation Oncology, 2Department of Big Bore CT Room, Shandong Cancer Hospital Affiliated to Shandong University, Shandong Academy of Medical Sciences, Jinan, Shandong, People’s Republic of ChinaPurpose: The purpose of this study was to compare the positional and volumetric differences of internal target volumes defined on three-dimensional computed tomography (3DCT, four-dimensional CT (4DCT, and cone-beam CT (CBCT images of non-small-cell lung cancer (NSCLC. Materials and methods: Thirty-one patients with NSCLC sequentially underwent 3DCT and 4DCT simulation scans of the thorax during free breathing. The first CBCT was performed and registered to the planning CT using the bony anatomy registration during radiotherapy. The gross tumor volumes were contoured on the basis of 3DCT, maximum intensity projection (MIP of 4DCT, and CBCT. CTV3D (clinical target volume, internal target volumes, ITVMIP and ITVCBCT, were defined with a 7 mm margin accounting for microscopic disease. ITV10 mm and ITV5 mm were defined on the basis of CTV3D: ITV10 mm with a 5 mm margin in left–right (LR, anterior–posterior (AP directions and 10 mm in cranial–caudal (CC direction; ITV5 mm with an isotropic internal margin (IM of 5 mm. The differences in the position, size, Dice’s similarity coefficient (DSC and inclusion relation of different volumes were evaluated.Results: The median size ratios of ITV10 mm, ITV5 mm, and ITVMIP to ITVCBCT were 2.33, 1.88, and 1.03, respectively, for tumors in the upper lobe and 2.13, 1.76, and 1.1, respectively, for tumors in the middle-lower lobe. The median DSCs of ITV10 mm, ITV5 mm, ITVMIP, and ITVCBCT were 0.6, 0.66, and 0.83 for all patients. The median percentages of ITVCBCT not included in ITV10 mm, ITV5 mm, and ITVMIP were 0.1%, 1.63%, and 15.21%, respectively, while the median percentages of ITV10 mm, ITV5 mm

  18. Graphene and Two-Dimensional Materials for Optoelectronic Applications

    Andreas Bablich

    2016-03-01

    Full Text Available This article reviews optoelectronic devices based on graphene and related two-dimensional (2D materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed.

  19. Pb5Bi24Se41: A new member of the homologous series forming topological insulator heterostructures

    Segawa, Kouji; Taskin, A.A.; Ando, Yoichi

    2015-01-01

    We have synthesized Pb 5 Bi 24 Se 41 , which is a new member of the (PbSe) 5 (Bi 2 Se 3 ) 3m homologous series with m=4. This series of compounds consist of alternating layers of the topological insulator Bi 2 Se 3 and the ordinary insulator PbSe. Such a naturally-formed heterostructure has recently been elucidated to give rise to peculiar quasi-two-dimensional topological states throughout the bulk, and the discovery of Pb 5 Bi 24 Se 41 expands the tunability of the topological states in this interesting homologous series. The trend in the resistivity anisotropy in this homologous series suggests an important role of hybridization of the topological states in the out-of-plane transport. - Graphical abstract: X-ray diffraction profiles taken on cleaved surfaces of single-crystal samples of the (PbSe) 5 (Bi 2 Se 3 ) 3m homologous series with various m values up to 4, which realizes topological insulator heterostructures. Schematic crystal structure of the new phase, m=4, is also shown. - Highlights: • We have synthesized a new member of the homologous series related to topological insulators. • In this compound, a heterostructure of topological and ordinary insulators naturally forms. • Resistivity anisotropy suggests an important role of hybridization of the topological states. • This compound expands the tunability of the topological states via chemical means

  20. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

    Guo, Hongwei; Liu, Yunlong; Xu, Yang; Meng, Nan; Luo, Jikui; Wang, Hongtao; Hasan, Tawfique; Wang, Xinran; Yu, Bin

    2014-01-01

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H 2 O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics. (paper)

  1. Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures.

    Huang, Y C; Chen, X; Wang, C; Peng, L; Qian, Q; Wang, S F

    2017-06-29

    Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

  2. Investigation of the field dependent spin structure of exchange coupled magnetic heterostructures

    Gurieva, Tatiana

    2016-05-01

    This thesis describes the investigation of the field dependent magnetic spin structure of an antiferromagnetically (AF) coupled Fe/Cr heterostructure sandwiched between a hardmagnetic FePt buffer layer and a softmagnetic Fe top layer. The depth-resolved experimental studies of this system were performed via Magneto-optical Kerr effect (MOKE), Vibrating Sample Magnetometry (VSM) and various measuring methods based on nuclear resonant scattering (NRS) technique. Nucleation and evolution of the magnetic spiral structure in the AF coupled Fe/Cr multilayer structure in an azimuthally rotating external magnetic field were observed using NRS. During the experiment a number of time-dependent magnetic side effects (magnetic after-effect, domain-wall creep effect) caused by the non-ideal structure of a real sample were observed and later explained. Creation of the magnetic spiral structure in rotating external magnetic field was simulated using a one-dimensional micromagnetic model.The cross-sectional magnetic X-ray diffraction technique was conceived and is theoretically described in the present work. This method allows to determine the magnetization state of an individual layer in the magnetic heterostructure. It is also applicable in studies of the magnetic structure of tiny samples where conventional x-ray reflectometry fails.

  3. Carbon doped InAlAs/InGaAs/InAs heterostructures

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    InAlAs/InGaAs heterostructures with a high In content are promising candidates for spintronic applications such as spin-valve mesoscopic devices due to their large Lande g-factor (around 15 in InAs) and the large Rashba effect. Here, we present results on carbon doped InGaAs/InAlAs heterostructures with embedded InAs channel. We got a two-dimensional hole gas with a hole density of p = 1.06*10{sup 12} cm{sup -2} and a hole mobility of 7.26*10{sup 3} cm{sup 2}/Vs. Magnetotransport measurements on L-shaped Hall bars along [011], [01-1], [010] and [001] crystal directions exhibit well-developed Shubnikov-de-Haas oscillations and quantum Hall plateaus, indicating the high quality of the material. In the field range from minus 6T to 6T the longitudinal resistance is superimposed with a negative parabolic magnetoresistance background. The minimum of the longitudinal resistance at B = 0T decreases with increasing temperature, and hence, is a sign for weak antilocalization.

  4. Surface Plasmon Polariton-Assisted Long-Range Exciton Transport in Monolayer Semiconductor Lateral Heterostructure

    Shi, Jinwei; Lin, Meng-Hsien; Chen, Yi-Tong; Estakhri, Nasim Mohammadi; Tseng, Guo-Wei; Wang, Yanrong; Chen, Hung-Ying; Chen, Chun-An; Shih, Chih-Kang; Alã¹, Andrea; Li, Xiaoqin; Lee, Yi-Hsien; Gwo, Shangjr

    Recently, two-dimensional (2D) semiconductor heterostructures, i.e., atomically thin lateral heterostructures (LHSs) based on transition metal dichalcogenides (TMDs) have been demonstrated. In an optically excited LHS, exciton transport is typically limited to a rather short spatial range ( 1 micron). Furthermore, additional losses may occur at the lateral interfacial regions. Here, to overcome these challenges, we experimentally implement a planar metal-oxide-semiconductor (MOS) structure by placing a monolayer of WS2/MoS2 LHS on top of an Al2O3 capped Ag single-crystalline plate. We found that the exciton transport range can be extended to tens of microns. The process of long-range exciton transport in the MOS structure is confirmed to be mediated by an exciton-surface plasmon polariton-exciton conversion mechanism, which allows a cascaded energy transfer process. Thus, the planar MOS structure provides a platform seamlessly combining 2D light-emitting materials with plasmonic planar waveguides, offering great potential for developing integrated photonic/plasmonic functionalities.

  5. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  6. Study of interface properties in LaAlO3/SrTiO3 heterostructures

    Thiel, Stefan Patrick

    2009-01-01

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  7. Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.

    Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K; Castro Neto, Antonio H; Yang, Hyunsoo

    2015-09-21

    Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

  8. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

    Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

    2014-08-07

    Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect

  9. Patient outcomes of monotherapy with hypofractionated three-dimensional conformal radiation therapy for stage T2 or T3 non-small cell lung cancer: a retrospective study

    Sakaguchi, Masakuni; Maebayashi, Toshiya; Aizawa, Takuya; Ishibashi, Naoya; Fukushima, Shoko; Abe, Osamu; Saito, Tsutomu

    2016-01-01

    Hypofractionated three-dimensional conformal radiation therapy (3D-CRT) is a treatment option for patients with early-stage non-small cell lung cancer (NSCLC) who are medically unable to tolerate surgery and who are not amenable to treatment with stereotactic body radiotherapy. This study assessed the efficacy and safety of 3D-CRT as a monotherapy in patients with localized stage T2 or T3 NSCLC. This retrospective study consisted of 29 patients (20 males) aged 56–89 years (median, 76 years) with histologically confirmed NSCLC who underwent 3D-CRT between 2005 and 2014. The median duration of patient observation was 17.0 months (range, 1.0–64.0 months). Complete and partial responses occurred in 13.8 and 44.8 % of patients, respectively, and the overall response rate was 58.2 %. Meanwhile, the 1- and 3-year survival rates were 65.8 and 33.8 %, respectively. In T2 NSCLC, the median survival time (MST) was 12 months, and the 1- and 3-year survival rates were 62.4 and 21.4 %, respectively. In T3 NSCLC, the MST was 17 months, and the 1- and 3-year survival rates were 72.9 and 48.6 %, respectively. Severe toxicities (Common Terminology Criteria Grade 3) were not observed. The mean biologically effective dose required to improve local control exceeded 80 Gy (range, 67.2–96.0 Gy). These findings support a role for 3D-CRT as a treatment option for patients who refuse or could not tolerate surgical therapy with early-stage NSCLC. Although this was a small, retrospective study, it may form the basis for future, larger controlled studies on 3D-CRT as a monotherapy for NSCLC

  10. Optical and electronic properties of AlGaN/GaN heterostructures; Optische und elektronische Eigenschaften von AlGaN/GaN-Heterostrukturen

    Winzer, Andreas T.

    2008-10-28

    The electronic material properties of AlGaN/GaN heterostructures were investigated. The analysis of optical spectra by complex models allowed for the first time to confirm the theoretically predicted dependence of the polarisation discontinuity (also called polarisation charge) on the Al content by reliable experiments. Furthermore, it is shown that the polarisation discontinuity is constant over the temperature range from 5 K up to room temperature. The method employed here is based on the analysis of electroreflectance (ER) spectra and exploits the specific dependence of the electric field strength within a layer on the applied electric voltage. In this work this method is consequently refined to surpass all alternative methods in accuracy. ER spectra of group-III-nitrides posses some general peculiarities: (i) In di- rect proximity to the band gap they can not be described by constant Seraphin coefficients in contrast to small gap semiconductors (e.g. GaAs). (ii) Though, the analysis of the Franz-Keldysh oscillations by Aspnes' method yields the correct values of the electric field strength as it is the case for small gap semiconductors. Optical and especially ER spectra of group-III-nitrides can only be described completely by taking into account for excitons in electric fields. For this a mo- del proposed by Blossey was applied to nitride semiconductors and implemented into a software program. By extensive numerical simulations it was found that the energetic position of the exciton main resonance as well as its spectral width depend linearly on the electric field strength. The approach presented is unique since it allows for a quantitative description of excitons in inhomogeneous electric fields. The good agreement between experiment and simulation supports the reliability of the material properties presented in this work. The operation of AlGaN/GaN heterostructures as chemical sensors was investigated by means of optical spectra too. If Pt contacted

  11. Optical device terahertz integration in a two-dimensional-three-dimensional heterostructure.

    Feng, Zhifang; Lin, Jie; Feng, Shuai

    2018-01-10

    The transmission properties of an off-planar integrated circuit including two wavelength division demultiplexers are designed, simulated, and analyzed in detail by the finite-difference time-domain method. The results show that the wavelength selection for different ports (0.404[c/a] at B 2 port, 0.389[c/a] at B 3 port, and 0.394[c/a] at B 4 port) can be realized by adjusting the parameters. It is especially important that the off-planar integration between two complex devices is also realized. These simulated results give valuable promotions in the all-optical integrated circuit, especially in compact integration.

  12. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

    Takimoto, Takuma; Takeshita, Koji; Nakamura, Seiji; Okumura, Tsugunori

    2014-01-01

    We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects

  13. Heterostructured TiO2/NiTiO3 Nanorod Arrays for Inorganic Sensitized Solar Cells with Significantly Enhanced Photovoltaic Performance and Stability.

    Li, Yue-Ying; Wang, Jian-Gan; Sun, Huan-Huan; Wei, Bingqing

    2018-04-11

    Organic dyes used in the conventional dye-sensitized solar cells (DSSCs) suffer from poor light stability and high cost. In this work, we demonstrate a new inorganic sensitized solar cell based on ordered one-dimensional semiconductor nanorod arrays of TiO 2 /NiTiO 3 (NTO) heterostructures prepared via a facile two-step hydrothermal approach. The semiconductor heterostructure arrays are highly desirable and promising for DSSCs because of their direct charge transport capability and slow charge recombination rate. The low-cost NTO inorganic semiconductor possesses an appropriate band gap that matches well with TiO 2 , which behaves like a "dye" to enable efficient light harvesting and fast electron-hole separation. The solar cells constructed by the ordered TiO 2 /NTO heterostructure photoanodes show a significantly improved power conversion efficiency, high fill factor, and more promising, outstanding life stability. The present work will open up an avenue to design heterostructured inorganics for high-performance solar cells.

  14. Preparation, structural characterization, and in vitro cell studies of three-dimensional SiO2-CaO binary glass scaffolds built ofultra-small nanofibers.

    Luo, Honglin; Li, Wei; Ao, Haiyong; Li, Gen; Tu, Junpin; Xiong, Guangyao; Zhu, Yong; Wan, Yizao

    2017-07-01

    Three-dimensional (3D) nanofibrous scaffolds hold great promises in tissue engineering and regenerative medicine. In this work, for the first time, 3D SiO 2 -CaO binary glass nanofibrous scaffolds have been fabricated via a combined method of template-assisted sol-gel and calcination by using bacterial cellulose as the template. SEM with EDS, TEM, and AFM confirm that the molar ratio of Ca to Si and fiber diameter of the resultant SiO 2 -CaO nanofibers can be controlled by immersion time in the solution of tetraethyl orthosilicate and ethanol. The optimal immersion time was 6h which produced the SiO 2 -CaO binary glass containing 60at.% Si and 40at.% Ca (named 60S40C). The fiber diameter of 60S40C scaffold is as small as 29nm. In addition, the scaffold has highly porous 3D nanostructure with dominant mesopores at 10.6nm and macropores at 20μm as well as a large BET surface area (240.9m 2 g -1 ), which endow the 60S40C scaffold excellent biocompatibility and high ALP activity as revealed by cell studies using osteoblast cells. These results suggest that the 60S40C scaffold has great potential in bone tissue regeneration. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. nomalous Interface and Surface Strontium Segregation in (La1-ySry)2CoO4 /La1-xSrxCoO3- Heterostructured Thin Films

    Feng, Zhenxing [Massachusetts Institute of Technology (MIT); Yacoby, Yuzhak [Massachusetts Institute of Technology (MIT); Gadre, Milind [Massachusetts Institute of Technology (MIT); Lee, Yueh-Lin [Massachusetts Institute of Technology (MIT); Hong, W. [Harvard University; Zhou, Hua [Argonne National Laboratory (ANL); Biegalski, Michael D [ORNL; Christen, Hans M [ORNL; Adler, Stuart [University of Washington; Morgan, Dane [University of Wisconsin, Madison; Shao-Horn, Yang [Massachusetts Institute of Technology (MIT)

    2014-01-01

    Heterostructured materials have shown unusual physiochemical properties at the interfaces such as two dimensional electron gas systems, high-temperature superconductivity, and enhanced catalysis. Here we report the first atomic-scale evidence of the microscopic structure of a perovskite/Ruddlesden-Popper heterostructure (having La1-xSrxCoO3- /(La1-ySry)2CoO4 ), and anomalous strontium segregation at the interface and in the Ruddlesden-Popper structure using direct X-ray methods combined with ab initio calculations. The remarkably enhanced activity of such heterostructured surfaces relative to bulk perovskite and Ruddlesden-Popper oxides previously shown for oxygen electrocatalysis at elevated temperatures can be attributed to reduced thermodynamic penalty of oxygen vacancies in the oxide structure associated with Sr segregation observed in the heterostructure. Our findings provide insights for the design of highly active catalysts for energy conversion and storage applications.

  16. DX centers in indium aluminum arsenide heterostructures

    Sari, Huseyin

    DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

  17. Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires

    Chen, Junze

    2017-06-05

    Rational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with interface at the edges of TMD nanosheets (NSs) still remains great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructures in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs through the gradually injection of chalcogen precursors. After cation exchange of Cu in Cu2-xS-TMD heterostructures with Cd, the obtained CdS-MoS2 heterostructures remained their original architectures. Compared to the pure CdS NWs, the CdS-MoS2 heterostructures with 7.7 wt% loading of MoS2 NSs exhibit the best performance in the photocatalytic hydrogen evolution reaction with the H2 production rate up to 4,647 μmol·h-1·g-1, about 58 times that catalyzed with pure CdS NWs. Our synthetic strategy opens up a new way for the controlled synthesis of TMD-based heterostructures which could have various promising applications.

  18. Proximity coupling in superconductor-graphene heterostructures

    Lee, Gil-Ho; Lee, Hu-Jong

    2018-05-01

    This review discusses the electronic properties and the prospective research directions of superconductor-graphene heterostructures. The basic electronic properties of graphene are introduced to highlight the unique possibility of combining two seemingly unrelated physics, superconductivity and relativity. We then focus on graphene-based Josephson junctions, one of the most versatile superconducting quantum devices. The various theoretical methods that have been developed to describe graphene Josephson junctions are examined, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales. The phase-sensitive properties and phase-particle dynamics of graphene Josephson junctions are examined to provide an understanding of the underlying mechanisms of Josephson coupling via graphene. Thereafter, microscopic transport of correlated quasiparticles produced by Andreev reflections at superconducting interfaces and their phase-coherent behaviors are discussed. Quantum phase transitions studied with graphene as an electrostatically tunable 2D platform are reviewed. The interplay between proximity-induced superconductivity and the quantum-Hall phase is discussed as a possible route to study topological superconductivity and non-Abelian physics. Finally, a brief summary on the prospective future research directions is given.

  19. Superconducting heterostructures: from antipinning to pinning potentials

    Carreira, S J; Chiliotte, C; Bekeris, V; Rosen, Y J; Monton, C; Schuller, Ivan K

    2014-01-01

    We study vortex lattice dynamics in a heterostructure that combines two type-II superconductors: a niobium film and a dense triangular array of submicrometric vanadium (V) pillars. Magnetic ac susceptibility measurements reveal a sudden increase in ac penetration, related to an increase in vortex mobility above a magnetic field, H ∗ (T), that decreases linearly with temperature. Additionally, temperature independent matching effects that occur when the number of vortices in the sample is an integer of the number of V pillars, strongly reduce vortex mobility, and were observed for the first and second matching fields, H 1 and H 2 . The angular dependence of H 1 , H 2 and H ∗ (T) shows that matching is determined by the normal applied field component, while H ∗ (T) is independent of the applied field orientation. This important result identifies H ∗ (T) with the critical field boundary for the normal to superconducting transition of V pillars. Below H ∗ (T), superconducting V pillars repel vortices, and the array becomes an ‘antipinning’ landscape that is more effective in reducing vortex mobility than the ‘pinning’ landscape of the normal V sites above H ∗ (T). Matching effects are observed both below and above H ∗ (T), implying the presence of ordered vortex configurations for ‘antipinning’ or ‘pinning’ arrays. (paper)

  20. Vortex jump behavior in coupled nanomagnetic heterostructures

    Zhang, S.; Phatak, C.; Petford-Long, A. K.; Heinonen, O.

    2014-01-01

    The spin configuration and magnetic behavior in patterned nanostructures can be controlled by manipulating the interplay between the competing energy terms. This in turn requires fundamental knowledge of the magnetic interactions at the local nanometer scale. Here, we report on the spin structure and magnetization behavior of patterned discs containing exchange coupled ferromagnetic layers with additional exchange bias to an antiferromagnetic layer. The magnetization reversal was explored by direct local visualization of the domain behavior using in-situ Lorentz transmission electron microscopy, from which quantitative magnetic induction maps were reconstructed. The roles of the main competing energy terms were elucidated and the reversal mechanism was identified as a coupled phenomenon of incoherent rotation in the exchange-biased layer and localized vortex nucleation and discontinuous propagation in the free layer, including an anomalous jump in the trajectory. The observations were supported by micromagnetic simulations and modeled phase shift simulations. The work presented here provides fundamental insights into opportunities for macroscopic control of the energy landscape of magnetic heterostructures for functional applications

  1. Odd-frequency pairing in superconducting heterostructures

    Golubov, A A [Faculty of Science and Technology and MESA Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands); Tanaka, Y [Department of Applied Physics, Nagoya University, Nagoya, 464-8603 (Japan); Asano, Y [Department of Applied Physics, Hokkaido University, Sapporo 060-8628 (Japan); Tanuma, Y [Institute of Physics, Kanagawa University, 3-7-1, Rokkakubashi, Kanagawa-ku, Yokohama 221-8686 (Japan)], E-mail: a.golubov@utwente.nl

    2009-04-22

    We review the theory of odd-frequency pairing in superconducting heterostructures, where an odd-frequency pairing component is induced near interfaces. A general description of the superconducting proximity effect in a normal metal or a ferromagnet attached to an unconventional superconductor (S) is given within quasiclassical kinetic theory for various types of symmetry state in S. Various possible symmetry classes in a superconductor are considered which are consistent with the Pauli principle: even-frequency spin-singlet even-parity (ESE) state, even-frequency spin-triplet odd-parity (ETO) state, odd-frequency spin-triplet even-parity (OTE) state and odd-frequency spin-singlet odd-parity (OSO) state. As an example, we consider a junction between a diffusive normal metal (DN) and a p-wave superconductor (even-frequency spin-triplet odd-parity symmetry), where the pairing amplitude in DN belongs to an odd-frequency spin-triplet even-parity symmetry class. We also discuss the manifestation of odd-frequency pairing in conventional superconductor/normal (S/N) proximity systems and its relation to the classical McMillan-Rowell oscillations.

  2. Graphene/black phosphorus heterostructured photodetector

    Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

    2018-06-01

    Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

  3. Odd-frequency pairing in superconducting heterostructures .

    Golubov, A. A.; Tanaka, Y.; Yokoyama, T.; Asano, Y.

    2007-03-01

    We present a general theory of the proximity effect in junctions between unconventional superconductors and diffusive normal metals (DN) or ferromagnets (DF). We consider all possible symmetry classes in a superconductor allowed by the Pauli principle: even-frequency spin-singlet even-parity state, even-frequency spin-triplet odd-parity state, odd-frequency spin-triplet even-parity state and odd-frequency spin-singlet odd-parity state. For each of the above states, symmetry and spectral properties of the induced pair amplitude in the DN (DF) are determined. The cases of junctions with spin-singlet s- and d-wave superconductors and spin-triplet p-wave superconductors are adressed in detail. We discuss the interplay between the proximity effect and midgap Andreev bound states arising at interfaces in unconventional (d- or p-wave) junctions. The most striking property is the odd-frequency symmetry of the pairing amplitude induced in DN (DF) in contacts with p-wave superconductors. This leads to zero-energy singularity in the density of states and to anomalous screening of an external magnetic field. Peculiarities of Josephson effect in d- or p-wave junctions are discussed. Experiments are suggested to detect an order parameter symmetry using heterostructures with unconventional superconductors.

  4. Vortex jump behavior in coupled nanomagnetic heterostructures

    Zhang, S.; Phatak, C., E-mail: cd@anl.gov [Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States); Petford-Long, A. K. [Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States); Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208 (United States); Heinonen, O. [Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States); Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Rd, Evanston, Illinois 60208-3112 (United States)

    2014-11-24

    The spin configuration and magnetic behavior in patterned nanostructures can be controlled by manipulating the interplay between the competing energy terms. This in turn requires fundamental knowledge of the magnetic interactions at the local nanometer scale. Here, we report on the spin structure and magnetization behavior of patterned discs containing exchange coupled ferromagnetic layers with additional exchange bias to an antiferromagnetic layer. The magnetization reversal was explored by direct local visualization of the domain behavior using in-situ Lorentz transmission electron microscopy, from which quantitative magnetic induction maps were reconstructed. The roles of the main competing energy terms were elucidated and the reversal mechanism was identified as a coupled phenomenon of incoherent rotation in the exchange-biased layer and localized vortex nucleation and discontinuous propagation in the free layer, including an anomalous jump in the trajectory. The observations were supported by micromagnetic simulations and modeled phase shift simulations. The work presented here provides fundamental insights into opportunities for macroscopic control of the energy landscape of magnetic heterostructures for functional applications.

  5. Quantum and field effects of oxide heterostructures

    Trier, Felix

    . In these multi-plexed devices, several inputs aretranslated into several outputs through the multiple physical functionalities.A highly prominent example of such an oxide interface is the one between LaAlO3 and SrTiO3. Although both LaAlO3 and SrTiO3 in the bulk are electrically insulating and non-magnetic......, their interface nonetheless shows attractive properties such as metallic conductivity, superconductivity and ferro magnetism.This thesis will provide an extensive review of the literature concerning the interface metal found in LaAlO3/SrTiO3 as well as in other SrTiO3-based hetero structures. Through this review...... in two different SrTiO3-based heterostructures. Here, it is shown that the interface between amorphous-LaAlO3 and SrTiO3 is superconducting with a larger critical transition temperature than that in LaAlO3/SrTiO3. For γ-Al2O3/SrTiO3 it is shown that non-volatile bipolar resistance switching is possible...

  6. Synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures for highly efficient green quantum dot light-emitting diodes

    Han, Shikui; Tan, Chaoliang; Zhang, Xiao; Chen, Junze; Huang, Ying; Chen, Bo; Luo, Zhimin; Ma, Qinglang; Sindoro, Melinda; Zhang, Hua [Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore (Singapore); Yang, Xuyong [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Zhu, Yihan; Han, Yu [Advanced Membranes and Porous Materials Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal (Saudi Arabia); Zhang, Hao; Li, Hai; Huang, Xiao; Huang, Wei [Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech) (China); Qi, Xiaoying [Singapore Institute of Manufacturing Technology, Singapore (Singapore); Sun, Xiao Wei [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Dept. of Electrical and Electronic Engineering, College of Engineering, Southern Univ. of Science and Technology, Nanshan, Shenzhen, Guangdong (China)

    2017-08-21

    Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO{sub n} nanomaterials. The WO{sub n}-WX{sub 2} heterostructures are composed of WO{sub 2.9} nanoparticles (NPs) or WO{sub 2.7} nanowires (NWs) grown together with single- or few-layer WX{sub 2} nanosheets (NSs). As a proof-of-concept application, the WO{sub n}-WX{sub 2} heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO{sub 2.9} NP-WSe{sub 2} NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Electrostatics of electron-hole interactions in van der Waals heterostructures

    Cavalcante, L. S. R.; Chaves, A.; Van Duppen, B.; Peeters, F. M.; Reichman, D. R.

    2018-03-01

    The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.

  8. Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al-Ge-Al Nanowire Heterostructures.

    Sistani, Masiar; Staudinger, Philipp; Greil, Johannes; Holzbauer, Martin; Detz, Hermann; Bertagnolli, Emmerich; Lugstein, Alois

    2017-08-09

    Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.

  9. Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

    Deen, David A.; Osinsky, Andrei; Miller, Ross

    2014-03-01

    A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection.

  10. Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

    Deen, David A.; Osinsky, Andrei; Miller, Ross

    2014-01-01

    A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection

  11. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  12. Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

    Deen, David A.; Osinsky, Andrei; Miller, Ross [Agnitron Technology Incorporated, Eden Prairie, Minnesota 55346 (United States)

    2014-03-03

    A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection.

  13. Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

    Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

    2009-01-05

    We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

  14. Spin-orbit torque-driven magnetization switching in 2D-topological insulator heterostructure

    Soleimani, Maryam; Jalili, Seifollah; Mahfouzi, Farzad; Kioussis, Nicholas

    2017-02-01

    Charge pumping and spin-orbit torque (SOT) are two reciprocal phenomena widely studied in ferromagnet (FM)/topological insulator (TI) heterostructures. However, the SOT and its corresponding switching phase diagram for a FM island in proximity to a two-dimensional topological insulator (2DTI) has not been explored yet. We have addressed these features, using the recently developed adiabatic expansion of time-dependent nonequilibrium Green's function (NEGF) in the presence of both precessing magnetization and bias voltage. We have calculated the angular and spatial dependence of different components of the SOT on the FM island. We determined the switching phase diagram of the FM for different orientations of the easy axis. The results can be used as a guideline for the future experiments on such systems.

  15. Electron scattering times in ZnO based polar heterostructures

    Falson, J., E-mail: j.falson@fkf.mpg.de [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Smet, J. H. [Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Arima, T. [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  16. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  17. First-principles approach for superconducting slabs and heterostructures

    Csire, Gabor [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We present a fully ab-initio method to calculate the transition temperature for superconducting slabs and heterostructures. In the case of thin superconductor layers the electron-phonon interaction may change significantly. Therefore we calculate the layer dependent phonon spectrum to determine the layer dependence of the electron-phonon coupling for such systems. The phonon spectrum is than coupled to the Kohn-Sham-Bogoliubov-de Gennes equation via the McMillan-Hopfield parameter, and it is solved self-consistently. The theory is applied to niobium slabs and niobium-gold heterostructures. Based on these calculations we investigate both the dependence of the superconducting transition temperature on the thickness of superconducting slabs and the inverse proximity effect observed in thin superconducting heterostructures.

  18. Predictors of grade {>=}2 and grade {>=}3 radiation pneumonitis in patients with locally advanced non-small cell lung cancer treated with three-dimensional conformal radiotherapy

    Dang, Jun; Li, Guang; Ma, Lianghua; Han, Chong; Zhang, Shuo; Yao, Lei [Dept. of Radiation Oncology, The First Hospital of China Medical Univ., Shenyang (China)], e-mail: gl1963516@yahoo.cn; Diao, Rao [Dept. of Experimental Technology Center, China Medical Univ., Shenyang (China); Zang, Shuang [Dept. of Nursing, China Medical Univ., Shenyang (China)

    2013-08-15

    Grade {>=}3 radiation pneumonitis (RP) is generally severe and life-threatening. Predictors of grade {>=}2 are usually used for grade {>=}3 RP prediction, but it is unclear whether these predictors are appropriate. In this study, predictors of grade {>=}2 and grade {>=}3 RP were investigated separately. The increased risk of severe RP in elderly patients compared with younger patients was also evaluated. Material and methods: A total of 176 consecutive patients with locally advanced non-small cell lung cancer were followed up prospectively after three-dimensional conformal radiotherapy. RP was graded according to Common Terminology Criteria for Adverse Events version 3.0. Results: Mean lung dose (MLD), mean heart dose, ratio of planning target volume to total lung volume (PTV/Lung), and dose-volume histogram comprehensive value of both heart and lung were associated with both grade {>=}2 and grade {>=}3 RP in univariate analysis. In multivariate logistic regression analysis, age and MLD were predictors of both grade {>=}2 RP and grade {>=}3 RP; receipt of chemotherapy predicted grade {>=}3 RP only; and sex and PTV/Lung predicted grade {>=}2 RP only. Among patients who developed high-grade RP, MLD and PTV/Lung were significantly lower in patients aged {>=}70 years than in younger patients (p<0.05 for both comparisons). Conclusions: The predictors were not completely consistent between grade {>=}2 RP and grade {>=}3 RP. Elderly patients had a higher risk of severe RP than younger patients did, possibly due to lower tolerance of radiation to the lung.

  19. Primary observing pulmonary function variety following three-dimensional conformal radiation therapy of III phase non-small cell lung cancer

    Cai Feng; Li Guang; Zhao Yuxia; Dang Jun; Yao Lei; Wu Chunli

    2006-01-01

    Objective: To explore the pulmonary function, DVH and radiation pneumonitis after three-dimensional conformal radiation treatment of III phase non-small-cell lung cancer. Methods: 71 patients (male 52, female 19, median age 63, KPS≥80) were evaluated by pulmonary function tests before radiotherapy and in M1 and M3 after radiotherapy respectively. After 3 months of follow-up time, it reviewed the appearance and grade of radiation pneumonitis. Then V 20 , V 30 and MLD were worked out from dose volume histogram. Results: All patients completed radiotherapy, and total dose was 66-70 Gy. FVC (L), FEV 1 (L) and C L CO were (2.58±0.65) L, (1.85±0.58) L and (15.15±4.65)ml/(min) before radio- therapy, with(2.96±0.76) L, (2.13±0.65) L and (14.71±3.92) ml/(min) in M1 after radiotherapy, with (2.65±0.61) L, (1.92±0.52) L and (13.15±3.71)ml/(min)in M3 after radiotherapy. The accidence of radiation pneumonitis was 30%, moderate and severe radiation pneumonitis was 7%. With V 20 , V 30 and MLD increasing, the grade of radiation pneumonitis was increasing. V 20 , V 30 and MLD were related to the change in C L CO value among before, M1 and M3 after radiotherapy, and the correlation coefficient was more than 0.2. Conclusions: There is a relationship in the pulmonary fiction, DVH and radiation pneumonitis surely. The change in C L CO value between before radiotherapy and M1 after radiotherapy could predict the radiation pneumonitis. V 20 , V 30 and MLD are not only correlated to radiation pneumonitis evidently but the change in FEV 1 and C L CO after radiotherapy. (authors)

  20. Comparison of Toxicity Between Intensity-Modulated Radiotherapy and 3-Dimensional Conformal Radiotherapy for Locally Advanced Non-small-cell Lung Cancer.

    Ling, Diane C; Hess, Clayton B; Chen, Allen M; Daly, Megan E

    2016-01-01

    The role of intensity-modulated radiotherapy (IMRT) in reducing treatment-related toxicity for locally advanced non-small-cell lung cancer (NSCLC) remains incompletely defined. We compared acute toxicity and oncologic outcomes in a large cohort of patients treated with IMRT or 3-dimensional conformal radiotherapy (3-DCRT), with or without elective nodal irradiation (ENI). A single-institution retrospective review was performed evaluating 145 consecutive patients with histologically confirmed stage III NSCLC treated with definitive chemoradiotherapy. Sixty-five (44.8%) were treated with 3-DCRT using ENI, 43 (30.0%) with 3-DCRT using involved-field radiotherapy (IFRT), and 37 (25.5%) with IMRT using IFRT. All patients received concurrent chemotherapy. Comparison of acute toxicities by treatment technique (IMRT vs. 3-DCRT) and extent of nodal irradiation (3-DCRT-IFRT vs. 3-DCRT-ENI) was performed for grade 2 or higher esophagitis or pneumonitis, number of acute hospitalizations, incidence of opioid requirement, percutaneous endoscopic gastrostomy utilization, and percentage weight loss during treatment. Local control and overall survival were analyzed by the Kaplan-Meier method. We identified no significant differences in any measures of acute toxicity by treatment technique or extent of nodal irradiation. There was a trend toward lower rates of grade 2 or higher pneumonitis among IMRT patients compared to 3-DCRT patients (5.4% vs. 23.0%; P = .065). Local control and overall survival were similar between cohorts. Acute and subacute toxicities were similar for patients treated with IMRT and with 3-DCRT with or without ENI, with a nonsignificant trend toward a reduction in pneumonitis with IMRT. Larger studies are needed to better define which patients will benefit from IMRT. Copyright © 2016 Elsevier Inc. All rights reserved.

  1. Results of induction chemotherapy followed by three-dimensional conformal radiotherapy and concurrent weekly paclitaxel for stage III non-small cell lung cancer

    Wang Weihua; Bao Yong; Chen Ming; Zhang Li; Xu Guangchuan; Li Kaixin

    2008-01-01

    Objective: To evaluate the toxicity and efficacy of induction chemotherapy (ICT) followed by three-dimensional conformal radiotherapy (3DCRT) plus concurrent weekly paclitaxel for inoperable non-small cell lung cancer (NSCLC). Methods: Patients with stage III NSCLC in favorable conditions were treated with 2 to 4 cycles of carboplatin (AUC=5-6, d1) combined with paclitaxel (175 mg/m 2 , d1), then followed by weekly paclitaxel (40 mg/m 2 ) and concurrent 3DCRT within 34 weeks. The prescription dose of radiotherapy was given as high as possible while total lung V 20 ≤31% and total dose of the spinal cord ≤50 Gy. Results: ICT was well tolerated. During the concurrent chemoradiotherapy,the treatment of 4 patients was ended ahead of the schedule because of severe pulmonary and cardiac toxicities; the treatment of 2 patients was delayed for 7 and 12 days because of fatigue. Leucopenia(33/56) was in grade 1-2 except 1 patient in grade 3. Lymphocytopenia was severe (54/56,42 in grade 3). Three patients developed grade 3 acute radiation-induced esophagitis, and 3 developed grade 3-4 radiation-induced pneumonitis. There was one patients each who developed grade 2,3, and 4 late esophageal damage, respectively. Nine developed grade 2 pulmonary fibrosis. The overall response rate was 69.7%. The 1-year overall survival rate was 72.3%. The 1-year local progression-free survival rate was 62.7%. Conclusions: The schedule of ICT followed by weekly paclitaxel and concurrent 3DCRT can be well tolerated by most of the favorable patients with stage III NSCLC, and the toxicity is tolerable. Results of this study are encouraging, though long-term results should be followed up. (authors)

  2. Changes in Pulmonary Function After Three-Dimensional Conformal Radiotherapy, Intensity-Modulated Radiotherapy, or Proton Beam Therapy for Non-Small-Cell Lung Cancer

    Lopez Guerra, Jose L.; Gomez, Daniel R.; Zhuang Yan; Levy, Lawrence B.; Eapen, George; Liu, Hongmei; Mohan, Radhe; Komaki, Ritsuko; Cox, James D.; Liao Zhongxing

    2012-01-01

    Purpose: To investigate the extent of change in pulmonary function over time after definitive radiotherapy for non-small-cell lung cancer (NSCLC) with modern techniques and to identify predictors of changes in pulmonary function according to patient, tumor, and treatment characteristics. Patients and Methods: We analyzed 250 patients who had received ≥60 Gy radio(chemo)therapy for primary NSCLC in 1998–2010 and had undergone pulmonary function tests before and within 1 year after treatment. Ninety-three patients were treated with three-dimensional conformal radiotherapy, 97 with intensity-modulated radiotherapy, and 60 with proton beam therapy. Postradiation pulmonary function test values were evaluated among individual patients compared with the same patient’s preradiation value at the following time intervals: 0–4 (T1), 5–8 (T2), and 9–12 (T3) months. Results: Lung diffusing capacity for carbon monoxide (DLCO) was reduced in the majority of patients along the three time periods after radiation, whereas the forced expiratory volume in 1 s per unit of vital capacity (FEV1/VC) showed an increase and decrease after radiation in a similar percentage of patients. There were baseline differences (stage, radiotherapy dose, concurrent chemotherapy) among the radiation technology groups. On multivariate analysis, the following features were associated with larger posttreatment declines in DLCO: pretreatment DLCO, gross tumor volume, lung and heart dosimetric data, and total radiation dose. Only pretreatment DLCO was associated with larger posttreatment declines in FEV1/VC. Conclusions: Lung diffusing capacity for carbon monoxide is reduced in the majority of patients after radiotherapy with modern techniques. Multiple factors, including gross tumor volume, preradiation lung function, and dosimetric parameters, are associated with the DLCO decline. Prospective studies are needed to better understand whether new radiation technology, such as proton beam therapy

  3. Dosimetry analysis on radiation-induced acute esophagitis after three-dimensional conformal radiotherapy for non-small cell lung cancer

    ZZhu Shuchai; Cui Yanli; Li Juan; Liu Zhikun; Shen Wenbin; Su Jingwei; Wang Yuxiang

    2010-01-01

    Objective: To analyze the related factors with radiation-induced esophagitis after threedimensional conformal radiotherapy for non-small cell lung cancer (NSCLC), in order to explore the predictors for optimizing the treatment planning of NSCLC. Methods: From Aug 2000 to Dec 2004, 104 NSCLC patients received radiotherapy and were eligible for this study, 45 cases squamous cell carcinoma, 20 cases adenocarcinoma, 33 cases carrying with cancer cells by test and 6 case with no definitive pathologic feature.46 patients were treated with three dimensional conformal radiotherapy (3DCRT), the other 58 patients conventional radiotherapy (CRT) before later-course 3DCRT. All the patients received the prescribed dose between 60-78 Gy and the median dose 66 Gy. The correlation of the variables were evaluated by Spearman relationship analysis. The morbidity of radiation-induced esophagitis was analyzed by X 2 test. The multivariate effect on radiation-induced esophagitis was statistically processed by Logistic regression model. Results: In 104 patients, the morbidity of radiation- induced esophagitis was 46.2%, including 32 cases at grade 1, 15 cases at grade 2, 1 case at grade 3. Univariate analysis showed the maximal and mean dose of esophagus, the volume of esophagus irradiated, the values of V 40 , V 45 , V 50 , V 55 , V 60 , LETT 45 , LETT 50 , LETT 55 , LETT 60 for the esophagus were correlated with radiation-induced esophagitis. Logistic regression model showed that the maximum dose received by the esophagus was the independent factor of ≥ 2 grade radiation-induced esophagitis. Conclusions: The maxmal dose of esophagus received might be the important factor of radiation-induced esophagitis. (authors)

  4. SU-F-T-508: A Collimator-Based 3-Dimensional Grid Therapy Technique in a Small Animal Radiation Research Platform

    Jin, J; Kong, V; Zhang, H

    2016-01-01

    Purpose: Three dimensional (3D) Grid Therapy using MLC-based inverse-planning has been proposed to achieve the features of both conformal radiotherapy and spatially fractionated radiotherapy, which may deliver very high dose in a single fraction to portions of a large tumor with relatively low normal tissue dose. However, the technique requires relatively long delivery time. This study aims to develop a collimator-based 3D grid therapy technique. Here we report the development of the technique in a small animal radiation research platform. Methods: Similar as in the MLC-based technique, 9 non-coplanar beams in special channeling directions were used for the 3D grid therapy technique. Two specially designed grid collimators were fabricated, and one of them was selectively used to match the corresponding gantry/couch angles so that the grid opening of all 9 beams are met in the 3D space in the target. A stack of EBT3 films were used as 3D dosimetry to demonstrate the 3D grid-like dose distribution in the target. Three 1-mm beams were delivered to the stack of films in the area outside the target for alignment when all the films were scanned to reconstruct the 3D dosimtric image. Results: 3D film dosimetry showed a lattice-like dose distribution in the 3D target as well as in the axial, sagittal and coronal planes. The dose outside the target also showed a grid like dose distribution, and the average dose gradually decreased with the distance to the target. The peak to valley ratio was approximately 5:1. The delivery time was 7 minutes for 18 Gy peak dose, comparing to 6 minutes to deliver a 18-Gy 3D conformal plan. Conclusion: We have demonstrated the feasibility of the collimator-based 3D grid therapy technique which can significantly reduce delivery time comparing to MLC-based inverse planning technique.

  5. Probability of mediastinal involvement in non-small-cell lung cancer: a statistical definition of the clinical target volume for 3-dimensional conformal radiotherapy?

    Giraud, Philippe; De Rycke, Yann; Lavole, Armelle; Milleron, Bernard; Cosset, Jean-Marc; Rosenzweig, Kenneth E.

    2006-01-01

    Purpose: Conformal irradiation (3D-CRT) of non-small-cell lung carcinoma (NSCLC) is largely based on precise definition of the nodal clinical target volume (CTVn). A reduction of the number of nodal stations to be irradiated would facilitate tumor dose escalation. The aim of this study was to design a mathematical tool based on documented data to predict the risk of metastatic involvement for each nodal station. Methods and Materials: We reviewed the large surgical series published in the literature to identify the main pretreatment parameters that modify the risk of nodal invasion. The probability of involvement for the 17 nodal stations described by the American Thoracic Society (ATS) was computed from all these publications. Starting with the primary site of the tumor as the main characteristic, we built a probabilistic tree for each nodal station representing the risk distribution as a function of each tumor feature. Statistical analysis used the inversion of probability trees method described by Weinstein and Feinberg. Validation of the software based on 134 patients from two different populations was performed by receiver operator characteristic (ROC) curves and multivariate logistic regression. Results: Analysis of all of the various parameters of pretreatment staging relative to each level of the ATS map results in 20,000 different combinations. The first parameters included in the tree, depending on tumor site, were histologic classification, metastatic stage, nodal stage weighted as a function of the sensitivity and specificity of the diagnostic examination used (positron emission tomography scan, computed tomography scan), and tumor stage. Software is proposed to compute a predicted probability of involvement of each nodal station for any given clinical presentation. Double cross validation confirmed the methodology. A 10% cutoff point was calculated from ROC and logistic model giving the best prediction of mediastinal lymph node involvement. Conclusion

  6. SU-F-T-508: A Collimator-Based 3-Dimensional Grid Therapy Technique in a Small Animal Radiation Research Platform

    Jin, J; Kong, V; Zhang, H [Georgia Regents University, Augusta, GA (Georgia)

    2016-06-15

    Purpose: Three dimensional (3D) Grid Therapy using MLC-based inverse-planning has been proposed to achieve the features of both conformal radiotherapy and spatially fractionated radiotherapy, which may deliver very high dose in a single fraction to portions of a large tumor with relatively low normal tissue dose. However, the technique requires relatively long delivery time. This study aims to develop a collimator-based 3D grid therapy technique. Here we report the development of the technique in a small animal radiation research platform. Methods: Similar as in the MLC-based technique, 9 non-coplanar beams in special channeling directions were used for the 3D grid therapy technique. Two specially designed grid collimators were fabricated, and one of them was selectively used to match the corresponding gantry/couch angles so that the grid opening of all 9 beams are met in the 3D space in the target. A stack of EBT3 films were used as 3D dosimetry to demonstrate the 3D grid-like dose distribution in the target. Three 1-mm beams were delivered to the stack of films in the area outside the target for alignment when all the films were scanned to reconstruct the 3D dosimtric image. Results: 3D film dosimetry showed a lattice-like dose distribution in the 3D target as well as in the axial, sagittal and coronal planes. The dose outside the target also showed a grid like dose distribution, and the average dose gradually decreased with the distance to the target. The peak to valley ratio was approximately 5:1. The delivery time was 7 minutes for 18 Gy peak dose, comparing to 6 minutes to deliver a 18-Gy 3D conformal plan. Conclusion: We have demonstrated the feasibility of the collimator-based 3D grid therapy technique which can significantly reduce delivery time comparing to MLC-based inverse planning technique.

  7. Comparison of three approaches to delineate internal gross tumor volume based on four-dimensional CT simulation images of non-small-cell lung cancer

    Li Fengxiang; Li Jianbin; Zhang Yingjie; Shang Dongping; Liu Tonghai; Tian Shiyu; Xu Min; Ma Changsheng

    2011-01-01

    Objective: To compare positional and volumetric differences of internal gross tumor volume (IGTV) delineated separately by three approaches based on four-dimensional CT (4DCT) for the primary tumor of non-small cell lung cancer (NLCLC). Methods: Twenty-one patients with NLCLC underwent big bore 4DCT simulation scan of the thorax. IGTVs of the primary tumor of NSCLC were delineated using three approaches as followed: (1) the gross tumor volume (GTV) on each of the ten the respiratory phases of the 4DCT image set were delineated and the ten GTV were fused to produce IGTV 10 ; (2) the GTV delineated separately based on 0% and 50% phase were fused to produce IGTV EI+EE ; (3) the visible tumor on the MIP images were delineated to produce IGTV MIP . The position of the target center, the volume of target, the degree of inclusion (DI) and the matching index (MI) were compared reciprocally between IGTV 10 , IGTV EI+EE and IGTV MIP . Results: Average differences between the position of the center of IGTVs on direction of x, y and z axes were less than 1 mm, with no statistically significant difference. The volume of IGTV 10 was larger than that of IGTV EI+EE , the difference was statistically significant (t=2.37, P=0.028); the volume of IGTV 10 was larger than that of IGTV MIP , but the difference was not statistically significant (t=1.95, P=0.065). The ratio of IGTV EI+EE with IGTV 10 , IGTV MIP with IGTV 10 were 0.85±0.08 and 0.92±0.11, respectively. DI of IGTV EI+EE in IGTV 10 , IGTV MIP in IGTV 10 were 84.78% ± 8. 95% and 88.47% ±9.04%. MI between IGTV 10 and IGTV EI+EE , IGTV 10 and IGTV MIP were 0.85 ±0.09, 0.86±0.09, respectively. Conclusions: The center displacement of the IGTVs delineated separately by the three different techniques based on 4DCT images are not obvious; IGTV EI+EE and IGTV MIP can not replace IGTV 10 , however, IGTV MIP is more close to IGTV 10 comparing to IGTV EI+EE . The ratio of GTV EI+EE with IGTV 10 is correlated to the tumor motion

  8. Transport in Josephson heterostructures and numerical applications of bosonization for fermionic systems

    Kandelaki, Ervand

    2014-01-01

    This Thesis reports on the scientific research conducted in the field of theoretical condensed matter physics and covers two rather independent topics. First, three different projects targeting heterostructures involving superconductors are discussed. Then, a project related to numerical methods for general fermionic interacting systems is presented. The Thesis is divided into four parts. In Part I of the present Thesis, we study the variation in the differential conductance G = dj/dV of a normal metal wire in a superconductor/normal metal heterostructure with a cross geometry under external microwave radiation applied to the superconducting parts. Our theoretical treatment is based on the quasiclassical Green's functions technique in the diffusive limit. Two limiting cases are considered: first, the limit of a weak proximity effect and low microwave frequency and second, the limit of a short dimension (short normal wire) and small irradiation amplitude. In Part II, we study the dynamics of Josephson junctions with a thin ferromagnetic layer F [superconductor-ferromagnet-insulator-ferromagnet-superconductor (SFIFS) junctions]. In such junctions, the phase difference φ of the superconductors and magnetization M in the F layer are two dynamic parameters coupled to each other. We derive equations describing the dynamics of these two parameters and formulate the conditions of validity. The coupled Josephson plasma waves and oscillations of the magnetization M affect the form of the current-voltage (I - V) characteristics in the presence of a weak magnetic field (Fiske steps). We calculate the modified Fiske steps and show that the magnetic degree of freedom not only changes the form of the Fiske steps but also the overall view of the I - V curve (new peaks related to the magnetic resonance appear). The I - V characteristics are shown for different lengths of the junction including those which correspond to the current experimental situation. We also calculate the

  9. Transport in Josephson heterostructures and numerical applications of bosonization for fermionic systems

    Kandelaki, Ervand

    2014-11-25

    This Thesis reports on the scientific research conducted in the field of theoretical condensed matter physics and covers two rather independent topics. First, three different projects targeting heterostructures involving superconductors are discussed. Then, a project related to numerical methods for general fermionic interacting systems is presented. The Thesis is divided into four parts. In Part I of the present Thesis, we study the variation in the differential conductance G = dj/dV of a normal metal wire in a superconductor/normal metal heterostructure with a cross geometry under external microwave radiation applied to the superconducting parts. Our theoretical treatment is based on the quasiclassical Green's functions technique in the diffusive limit. Two limiting cases are considered: first, the limit of a weak proximity effect and low microwave frequency and second, the limit of a short dimension (short normal wire) and small irradiation amplitude. In Part II, we study the dynamics of Josephson junctions with a thin ferromagnetic layer F [superconductor-ferromagnet-insulator-ferromagnet-superconductor (SFIFS) junctions]. In such junctions, the phase difference φ of the superconductors and magnetization M in the F layer are two dynamic parameters coupled to each other. We derive equations describing the dynamics of these two parameters and formulate the conditions of validity. The coupled Josephson plasma waves and oscillations of the magnetization M affect the form of the current-voltage (I - V) characteristics in the presence of a weak magnetic field (Fiske steps). We calculate the modified Fiske steps and show that the magnetic degree of freedom not only changes the form of the Fiske steps but also the overall view of the I - V curve (new peaks related to the magnetic resonance appear). The I - V characteristics are shown for different lengths of the junction including those which correspond to the current experimental situation. We also calculate the

  10. Non small cells stage I bronchial cancers: three-dimensional radiotherapy and radiotherapy in stereotactic conditions; Cancers bronchiques non a petites cellules de stade I: radiotherapie tridimensionnelle et radiotherapie en conditions stereotaxiques

    Schipman, B.; Bosset, J.F. [CHU, 25 - Besancon (France); Marchesi, V.; Beckendorf, V.; Desandes, E.; Peiffert, D. [CRLCC Alexis-Vautrin, 54 - Vandaeuvre-les-Nancy (France); Bosset, M. [CHU, 26 - Valence (France)

    2010-10-15

    The authors report a comparison between three-dimensional conformation radiotherapy and robotic irradiation in stereotactic conditions (with CyberKnife) for patients suffering from a bronchial cancer with no small cells of stage I. Acute and late toxicity have been recorded, and the monitoring comprised a clinic examination and a thoracic scanography. The external radiotherapy results in an important local control rate and an acceptable toxicity. Some prospective studies are still needed to compare three-dimensional conformation respiratory-gated radiotherapy and radiotherapy in stereotactic conditions. Short communication

  11. Fabrication of colloidal crystal heterostructures by a room temperature floating self-assembly method

    Wang Aijun; Chen Shengli; Dong Peng

    2011-01-01

    Highlights: → Opal colloidal crystal heterostructure of several square centimeters in area was fabricated within only tens of minutes. → A fabricated colloidal crystal heterostructure was composed of a PS opal and a TiO 2 inverse opal crystal films. → The photonic heterostructure had two photonic-band gaps. → The relative position of the two photonic-band gaps can be controlled by the size of PS microspheres used to fabricate the photonic heterostructure. - Abstract: Photonic crystal heterostructures were fabricated through a room temperature floating self-assembly (RTFSA) method recently developed by our research group. Applying this method, opal colloidal crystal heterostructures of several square centimeters in area were fabricated within tens of minutes without special facilities, and a heterostructure composed of a PS opal and a TiO 2 inverse opal crystal films was fabricated. SEM image of the PS opal-TiO 2 inverse opal heterostructure showed the ordered growth of the top opal film of the heterostructure was hardly disturbed by the cracks in the TiO 2 inverse opal film. The UV-vis transmission spectra indicated that the photonic heterostructures had two photonic-band gaps, and the relative position of two photonic-band gaps can be controlled by the size of PS microspheres used to fabricated the photonic heterostructures.

  12. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  13. Longitudinal conductivity of LaF3/SrF2 multilayer heterostructures.

    Vergentev, Tikhon; Banshchikov, Alexander; Filimonov, Alexey; Koroleva, Ekaterina; Sokolov, Nikolay; Wurz, Marc Christopher

    2016-01-01

    LaF 3 /SrF 2 multilayer heterostructures with thicknesses of individual layers in the range 5-100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been measured using impedance spectroscopy in the frequency range 10 -1 -10 6  Hz and a temperature range 300-570 K. The ionic DC conductivities have been determined from Nyquist impedance diagrams and activation energies from the Arrhenius-Frenkel equation. An increase of the DC conductivity has been observed to accompany decreased layer thickness for various thicknesses as small as 25 nm. The greatest conductivity has been shown for a multilayer heterostructure having thicknesses of 25 nm per layer. The structure has a conductivity two orders of magnitude greater than pure LaF 3 bulk material. The increasing conductivity can be understood as a redistribution of charge carriers through the interface due to differing chemical potentials of the materials, by strong lattice-constant mismatch, and/or by formation of a solid La 1-x Sr x F 3-x solution at the interface during the growth process.

  14. Micromagnetic sensors and Dirac fermions in HgTe heterostructures

    Buettner, Bastian

    2012-08-06

    Within the scope of this thesis two main topics have been investigated: the examination of micromagnetic sensors and transport of massive and massless Dirac fermions in HgTe quantum wells. For the investigation of localized, inhomogeneous magnetic fields, the fabrication and characterization of two different non-invasive and ultra sensitive sensors has been established at the chair ''Experimentelle Physik'' of the University of Wuerzburg. The first sensor is based on the young technique named micro-Hall magnetometry. The necessary semiconductor devices (Hall cross structures) were fabricated by high-resolution electron beam lithography based on two different two dimensional electron gases (2DEGs), namely InAs/(Al,Ga)Sb- and HgTe/(Hg,Cd)Te-heterostructures. The characteristics have been examined in two different ways. Measurements in homogeneous magnetic fields served for characterization of the sensors, whereas the investigation of artificially produced sub-{mu}m magnets substantiates the suitability of the devices for the study of novel nanoscale magnetic materials (e.g. nanowires). Systematic experiments with various magnets are in accordance with the theory of single-domain particles and anisotropic behavior due to shapes with high aspect ratio. The highest sensitivity for strongly localized fields was obtained at T=4.2 K for a (200.200) nm{sup 2} Hall cross - made from shallow, high mobility HgTe 2DEG. Although the field resolution was merely {delta}B{approx}100 {mu}T, the nanoscale sensor size yields an outstanding flux resolution of {delta}{Phi}=2.10{sup -3} {Phi}{sub 0}, where {Phi}{sub 0}=h/2e is the flux quantum. Translating this result in terms of magnetic moment, the sensitivity allows for the detection of magnetization changes of a particle centered on top of the sensor as low as {delta}M{approx}10{sup 2} {mu}{sub B}, with the magnetic moment of a single electron {mu}{sub B}, the Bohr magneton. The further examination of a permalloy nanomagnet with a

  15. Micromagnetic sensors and Dirac fermions in HgTe heterostructures

    Buettner, Bastian

    2012-01-01

    Within the scope of this thesis two main topics have been investigated: the examination of micromagnetic sensors and transport of massive and massless Dirac fermions in HgTe quantum wells. For the investigation of localized, inhomogeneous magnetic fields, the fabrication and characterization of two different non-invasive and ultra sensitive sensors has been established at the chair ''Experimentelle Physik'' of the University of Wuerzburg. The first sensor is based on the young technique named micro-Hall magnetometry. The necessary semiconductor devices (Hall cross structures) were fabricated by high-resolution electron beam lithography based on two different two dimensional electron gases (2DEGs), namely InAs/(Al,Ga)Sb- and HgTe/(Hg,Cd)Te-heterostructures. The characteristics have been examined in two different ways. Measurements in homogeneous magnetic fields served for characterization of the sensors, whereas the investigation of artificially produced sub-μm magnets substantiates the suitability of the devices for the study of novel nanoscale magnetic materials (e.g. nanowires). Systematic experiments with various magnets are in accordance with the theory of single-domain particles and anisotropic behavior due to shapes with high aspect ratio. The highest sensitivity for strongly localized fields was obtained at T=4.2 K for a (200.200) nm 2 Hall cross - made from shallow, high mobility HgTe 2DEG. Although the field resolution was merely δB∼100 μT, the nanoscale sensor size yields an outstanding flux resolution of δΦ=2.10 -3 Φ 0 , where Φ 0 =h/2e is the flux quantum. Translating this result in terms of magnetic moment, the sensitivity allows for the detection of magnetization changes of a particle centered on top of the sensor as low as δM∼10 2 μ B , with the magnetic moment of a single electron μ B , the Bohr magneton. The further examination of a permalloy nanomagnet with a cross-section of (100.20) nm 2 confirms the expected resolution ability

  16. Micromagnetic sensors and Dirac fermions in HgTe heterostructures

    Buettner, Bastian

    2012-08-06

    Within the scope of this thesis two main topics have been investigated: the examination of micromagnetic sensors and transport of massive and massless Dirac fermions in HgTe quantum wells. For the investigation of localized, inhomogeneous magnetic fields, the fabrication and characterization of two different non-invasive and ultra sensitive sensors has been established at the chair ''Experimentelle Physik'' of the University of Wuerzburg. The first sensor is based on the young technique named micro-Hall magnetometry. The necessary semiconductor devices (Hall cross structures) were fabricated by high-resolution electron beam lithography based on two different two dimensional electron gases (2DEGs), namely InAs/(Al,Ga)Sb- and HgTe/(Hg,Cd)Te-heterostructures. The characteristics have been examined in two different ways. Measurements in homogeneous magnetic fields served for characterization of the sensors, whereas the investigation of artificially produced sub-{mu}m magnets substantiates the suitability of the devices for the study of novel nanoscale magnetic materials (e.g. nanowires). Systematic experiments with various magnets are in accordance with the theory of single-domain particles and anisotropic behavior due to shapes with high aspect ratio. The highest sensitivity for strongly localized fields was obtained at T=4.2 K for a (200.200) nm{sup 2} Hall cross - made from shallow, high mobility HgTe 2DEG. Although the field resolution was merely {delta}B{approx}100 {mu}T, the nanoscale sensor size yields an outstanding flux resolution of {delta}{Phi}=2.10{sup -3} {Phi}{sub 0}, where {Phi}{sub 0}=h/2e is the flux quantum. Translating this result in terms of magnetic moment, the sensitivity allows for the detection of magnetization changes of a particle centered on top of the sensor as low as {delta}M{approx}10{sup 2} {mu}{sub B}, with the magnetic moment of a single electron {mu}{sub B}, the Bohr magneton. The further examination of a permalloy

  17. Direct synthesis of all-inorganic heterostructured CdSe/CdS QDs in aqueous solution for improved photocatalytic hydrogen generation

    Li, Zhi-Jun; Fan, Xiang-Bing; Li, Xu-Bing; Li, Jia-Xin; Zhan, Fei; Tao, Ye; Zhang, Xiaoyi; Kong, Qing-Yu; Zhao, Ning-Jiu; Zhang, Jian-Ping; Ye, Chen; Gao, Yu-Ji; Wang, Xu-Zhe; Meng, Qing-Yuan; Feng, Ke; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

    2017-01-01

    Here we present a facile aqueous approach to synthesize heterostructured CdSe/CdS QDs with all-inorganic chalcogenide S2- ligands under mild conditions. High-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and steady-state emission spectroscopy demonstrate that the heterostructured CdSe/CdS QDs with sulfur-rich surface composition are formed by heterogeneous nucleation of Cd2+ and S2- precursors on the CdSe QDs. After adsorption of small Ni(OH)(2) clusters over the surface in situ, the CdSe/CdS-Ni(OH)(2) photocatalyst enables H-2 production efficiently with an internal quantum yield of 52% under visible light irradiation at 455 nm, up to an 8-fold increase of activity to that of spherical CdSe QDs-Ni(OH)(2) under the same conditions. Femtosecond transient absorption spectroscopy, X-ray transient absorption (XTA) spectroscopy, steady-state and time-resolved emission spectroscopy show that the quasi-type-II band alignment in the CdSe/CdS heterostructure is responsible for the efficiency enhancement of light harvesting and surface/interfacial charge separation in solar energy conversion. The unprecedented results exemplify an easily accessible pattern of aqueous synthesis of all-inorganic heterostructured QDs for advanced photosynthetic H-2 evolution.

  18. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

    Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Yagovkina, M. A.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Cherkashin, N. A. [CEMES–CNRS—Université de Toulouse (France)

    2016-09-15

    The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.

  19. Rashba effect and enriched spin-valley coupling in Ga X /M X2 (M = Mo, W; X = S, Se, Te) heterostructures

    Zhang, Qingyun; Schwingenschlögl, Udo

    2018-04-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional Ga X /MX 2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between Ga X and MX 2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K' valleys (out-of-plane spin direction) makes Ga X /MX 2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  20. Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires

    Chen, Junze; Wu, Xue-Jun; Gong, Yue; Zhu, Yihan; Yang, Zhenzhong; Li, Bing; Lu, Qipeng; Yu, Yifu; Han, Shikui; Zhang, Zhicheng; Zong, Yun; Han, Yu; Gu, Lin; Zhang, Hua

    2017-01-01

    the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs

  1. Electrospinning synthesis of InVO{sub 4}/BiVO{sub 4} heterostructured nanobelts and their enhanced photocatalytic performance

    Liu, Zhendong; Lu, Qifang, E-mail: luqf0110@126.com; Guo, Enyan; Liu, Suwen [Qilu University of Technology, Shandong Provincial Key Laboratory of Processing and Testing Technology of Glass and Functional Ceramics, School of Material Science and Engineering (China)

    2016-08-15

    In the present work, one-dimensional InVO{sub 4}/BiVO{sub 4} heterostructured nanobelts with the width of about 800 nm have been successfully prepared by a simple electrospinning technique followed by the subsequent calcination process. The prepared products were characterized by thermogravimetry, fourier transform infrared spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, UV–Vis absorbance spectroscopy, high-performance liquid chromatography, and photoluminescence spectroscopy. The obtained InVO{sub 4}/BiVO{sub 4} heterostructured nanobelts presented an admirable morphology and excellent photocatalytic properties for the degradation of methylene blue solution under visible-light irradiation.Graphical AbstractThe electrospun precursor samples (a and b) displayed a well-defined one-dimensional (1D) belt structure. After calcined at 550 °C for 2 h (c and d), the samples can retain well the 1D morphology. And an obvious porous structure can be found from the TEM images of the calcined samples (e and f).

  2. Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

    Agrawal, M.; Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Karthikeyan, G. S.; Zheng, Y.

    2017-01-01

    The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V˜1)and GaN is grown under N-rich growth regime (III/VHEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm-2.

  3. A prospective study on concurrent chemotherapy and thoracic three-dimensional radiotherapy for stage IV non-small cell lung cancer (1) -survival and toxicity

    Su Shengfa; Lu Bing; Zhang Bo; Hu Yinyang; Ouyang Weiwei; Li Huiqin; Wang Gang; Long Jinhua

    2011-01-01

    Objective: To evaluate the overall survival and safety among patients for stage IV non-small cell lung cancer (NSCLC) treated with concurrent chemotherapy and thoracic three-dimensional radiotherapy (CCTTRT). Methods: From Jan. 2003 to July 2010, 201 patients with stage IV NSCLC were included. All patients were treated with CCTTRT. Those patients who received only one cycle chemotherapy were not included in survival analysis,but analysis of toxicity. One hundred and eighty-two patients were eligible for survival analysis. All patients received platinum-based two-drug chemotherapy. The median number of cycles was 4. The median dose to planning target volume of primary tumor (DT PTV ) was 63 Gy. Treatment-related gastrointestinal and hematological toxicity were scored according to WHO criteria. Radiation-related pneumonitis and esophagitis were evaluated according to the National Cancer Institute's Common Terminology Criteria for Adverse Events (CTC) version 3.0. Survival was calculated by Kaplan-Meier method and compared using the Logrank. Cox regression model was used to examine the effect of CCTTRT on overall survival. Results: The follow-up rate of 201 patients was 97.5%. with 201, 170 and 134 patients finished 2 =10.10, P =0.001). For patients eligible for survival analysis and received 4 - 5 cycles of systemic chemotherapy, MST of patients treated with DT PTV ≥63 Gy was significantly longer than those treated with DT PTV 2 =20.48, P =0.000) and 16.1 months vs.8.8 months (χ 2 =11.75, P =0.001)]. For patients with single organ metastasis, MST was 16 months for those treated with DT PTV ≥63 Gy and 9 months for those with DT PTV 2 =10.51, P=0.000); for patients with multiple organ metastasis, it was 11 months and 7 months, respectively (χ 2 =7.90, P =0.005). Multivariate analysis showed that concurrent 4 - 5 cycles chemotherapy and DTPTV ≥63 Gy (β =0.243, P=0.019) and improved KPS (β =1.268, P=0.000) were independent factors for survival. For the whole

  4. Induction chemotherapy plus three-dimensional conformal radiation therapy in the definitive treatment of locally advanced non-small-cell lung cancer

    Sim, Sang; Rosenzweig, Kenneth E.; Schindelheim, Rachel; Ng, Kenneth K.; Leibel, Steven A.

    2001-01-01

    Purpose: To evaluate our institution's experience using chemotherapy in conjunction with three-dimensional conformal radiation therapy (3D-CRT). Methods and Materials: From 1991 to 1998, 152 patients with Stage III non-small-cell lung cancer (NSCLC) were treated with 3D-CRT at Memorial Sloan-Kettering Cancer Center. A total of 137 patients (90%) were surgically staged with either thoracotomy or mediastinoscopy. The remainder were staged radiographically. Seventy patients were treated with radiation therapy alone, and 82 patients received induction chemotherapy before radiation. The majority of chemotherapy-treated patients received a platinum-containing regimen. Radiation was delivered with a 3D conformal technique using CT-based treatment planning. The median dose in the radiation alone group was 70.2 Gy, while in the combined modality group, it was 64.8 Gy. Results: The median follow-up time was 30.5 months among survivors. Stage IIIB disease was present in 36 patients (51%) in the radiation-alone group and 57 patients (70%) in the combined-modality group. Thirty-nine patients had poor prognostic factors (KPS 5%), and they were equally distributed between the two groups. The median survival times for the radiation-alone and the combined-modality groups were 11.7 months and 18.1 months, respectively (p=0.001). The 2-year rates of local control in the radiation-alone and combined-modality groups were 35.4% and 43.1%, respectively (p=0.1). Grade 3 or worse nonhematologic toxicity occurred in 20% of the patients receiving radiation alone and in 16% of those receiving chemotherapy and radiation. Overall, there were only 4 cases of Grade 3 or worse esophagitis. Conclusion: Despite more Stage IIIB patients in the combined-modality group, the addition of chemotherapy to 3D-CRT produced a survival advantage over 3D-CRT alone in Stage III NSCLC without a concomitant increase in toxicity. Chemotherapy thus appears to be beneficial, even in patients who are receiving higher

  5. Electronic and optical properties of diamond/organic semiconductor heterostructures

    Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

    2007-07-01

    Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

  6. Surface- and interface-engineered heterostructures for solar hydrogen generation

    Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

    2018-04-01

    Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

  7. Inorganic nanostructure-organic polymer heterostructures useful for thermoelectric devices

    See, Kevin C.; Urban, Jeffrey J.; Segalman, Rachel A.; Coates, Nelson E.; Yee, Shannon K.

    2017-11-28

    The present invention provides for an inorganic nanostructure-organic polymer heterostructure, useful as a thermoelectric composite material, comprising (a) an inorganic nanostructure, and (b) an electrically conductive organic polymer disposed on the inorganic nanostructure. Both the inorganic nanostructure and the electrically conductive organic polymer are solution-processable.

  8. The dielectric genome of van der Waals heterostructures

    Andersen, Kirsten; Latini, Simone; Thygesen, Kristian Sommer

    2015-01-01

    , the hybridization of quantum plasmons in large graphene/hBN heterostructures, and to demonstrate the intricate effect of substrate screening on the non-Rydberg exciton series in supported WS2. The dielectric building blocks for a variety of 2D crystals are available in an open database together with the software...... for solving the coupled electrodynamic equations....

  9. IZO deposited by PLD on flexible substrate for organic heterostructures

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Rasoga, O.; Stanculescu, F.; Socol, G.

    2017-05-01

    In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10-3 Ω-1) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq3).

  10. Photosensitive heterostructures made of sulfonamide zinc phthalocyanine and organic semiconductor

    Lutsyk, P.; Vertsimakha, Ya.; Nešpůrek, Stanislav; Pomaz, I.

    2011-01-01

    Roč. 535, - (2011), s. 18-29 ISSN 1542-1406 Institutional research plan: CEZ:AV0Z40500505 Keywords : heterostructure * reversal of sign in photovoltage spectra * sulphonamide-substituted phthalocyanine Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.580, year: 2011

  11. Photopatterning of heterostructured polymer Langmuir-Blodgett films

    Li Tiesheng; Mitsuishi, Masaya; Miyashita, Tokuji

    2008-01-01

    Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication

  12. Two-dimensional confinement of heavy fermions

    Shishido, Hiroaki; Shibauchi, Takasada; Matsuda, Yuji; Terashima, Takahito

    2010-01-01

    Metallic systems with the strongest electron correlations are realized in certain rare-earth and actinide compounds whose physics are dominated by f-electrons. These materials are known as heavy fermions, so called because the effective mass of the conduction electrons is enhanced via correlation effects up to as much as several hundreds times the free electron mass. To date the electronic structure of all heavy-fermion compounds is essentially three-dimensional. Here we report on the first realization of a two-dimensional heavy-fermion system, where the dimensionality is adjusted in a controllable fashion by fabricating heterostructures using molecular beam epitaxy. The two-dimensional heavy fermion system displays striking deviations from the standard Fermi liquid low-temperature electronic properties. (author)

  13. Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

    Baladés, N., E-mail: nuria.balades@uca.es [INNANOMAT Group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Herrera, M.; Sales, David L.; Delgado, F.J. [INNANOMAT Group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Hernández-Maldonado, D.; Ramasse, Q.M. [SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Warrington WA4 4AD (United Kingdom); Pizarro, J.; Galindo, P. [Department of Computer Engineering, University of Cádiz, Avda. de la Universidad de Cádiz, no 10, 11519 Cádiz (Spain); González, M. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Sotera Defense Solutions, 430 National Business Pkwy # 100, Annapolis Junction, MD 20701 (United States); Abell, J.; Tomasulo, S.; Walters, J.R. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); and others

    2017-02-15

    Highlights: • The red shift in the photoluminescence emission of InAlAsSb layers is due to small and gradual compositional fluctuations, rather than in the form of atomically sharp transitions. • The composition fluctuations in InAlAsSb active layers do not cause strong variations of the lattice parameter. • The strain due to composition fluctuations in the InGaAs buffer layer does not have a strong effect in the InAlAsSb active layer. • The 2D nature of the TEM-STEM techniques is an important limitation for the analysis of 3D small compositional fluctuations in quaternary semiconductors. - Abstract: In this work, we have characterized by transmission electron microscopy techniques the structural properties of InAlAsSb/InGaAs/InP heterostructures, with target applications in high efficiency solar cells. Previous photoluminescence (PL) analysis suggested the existence of compositional fluctuations in the active layer of these heterostructures. 220 bright field (BF) diffraction contrast micrographs have revealed strong strain contrast in the InGaAs buffer layer, related to the existence of these compositional fluctuations. The effect of a decomposed buffer on the growth of the InAlAsSb layer has been analyzed through the simulation of the strain fields in the heterostructure using the finite elements method (FEM). These simulations have shown that the strain in the buffer layer due to the compositional fluctuations only affects the first few nm of the InAlAsSb layer. The analysis by aberration corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS) of the composition of the InAlAsSb layer reveals that any compositional fluctuation is only observed as an average effect, rather than in the form of clustering or atomically sharp transitions. The limitations of these techniques for the detection of small 3D compositional fluctuations are discussed.

  14. A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

    Nilsson, Henrik A.; Duty, Tim; Abay, Simon

    2008-01-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements...... on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just...

  15. Ultrafast dynamics of confined and localised excitons and biexcitons in low-dimensional semiconductors

    Hvam, Jørn Märcher; Langbein, Wolfgang; Borri, Paola

    1999-01-01

    Coherent optical spectroscopy in the form of nonlinear transient four-wave mixing (TFWM) and linear resonant Rayleigh scattering (RRS) has been applied to investigate the exciton dynamics of low-dimensional semiconductor heterostructures. The dephasing times of excitons are determined from...

  16. Coherent electron focusing with quantum point contacts in a two-dimensional electron gas

    Houten, H. van; Beenakker, C.W.J.; Williamson, J.G.; Broekaart, M.E.I.; Loosdrecht, P.H.M. van; Wees, B.J. van; Mooij, J.E.; Foxon, C.T.; Harris, J.J.

    1989-01-01

    Transverse electron focusing in a two-dimensional electron gas is investigated experimentally and theoretically for the first time. A split Schottky gate on top of a GaAs-AlxGa1–xAs heterostructure defines two point contacts of variable width, which are used as injector and collector of ballistic

  17. Van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

    Ben Aziza, Zeineb; Henck, Hugo; Pierucci, Debora; Silly, Mathieu G; Lhuillier, Emmanuel; Patriarche, Gilles; Sirotti, Fausto; Eddrief, Mahmoud; Ouerghi, Abdelkarim

    2016-10-07

    Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems which are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by Molecular beam Epitaxy (MBE) on graphene. Reflection high-energy electron diffraction (RHEED) images exhibited sharp streaky features indicative of high quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW hetero-interface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relatively to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high resolution X-ray photoemission spectroscopy (HR-XPS) measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow deeper understanding of the interlayer interactions and the electronic structure of GaSe/graphene vdW heterostructure.

  18. Calculated carrier mobility of h-BN/γ-InSe/h-BN van der Waals heterostructures

    Kang, P.; Michaud-Rioux, V.; Kong, X.-H.; Yu, G.-H.; Guo, H.

    2017-12-01

    Recent experiments reported excellent transport properties of two-dimensional (2D) van der Waals (vdW) heterostructures made of atomically thin InSe layers encapsulated by two hBN capping layers (ISBN). The carrier mobility of the ISBN films exceeded μ ˜ 1.2× {{10}4} \\text{c}{{\\text{m}}2} {{\\text{V}}-1} {{\\text{s}}-1} at low temperature, much higher than that of pristine InSe films. It has been puzzling why the relatively inert hBN capping layer could so drastically enhance mobility of the ISBN composite. Using a state-of-the-art first principles method, we have calculated phonon limited carrier mobility of 18 different ISBN films and 6 pristine InSe films with different thicknesses, the largest system containing 2212 atoms. The hBN capping layer significantly alters the elastic stiffness coefficient as compared with pure InSe—thus the acoustic phonons in the ISBN composite—giving rise to the observed large mobility of ISBN films. Of the 18 calculated ISBN films, the ones with no strain at the hBN/InSe interface possess the highest electron mobility, reaching 4340~\\text{c}{{\\text{m}}2}~{{\\text{V}}-1}~{{\\text{s}}-1} at room temperature, which could easily go over {{10}4}~\\text{c}{{\\text{m}}2}~{{\\text{V}}-1}~{{\\text{s}}-1} at low temperatures. We conclude that the mechanical properties of the composite 2D vdW ISBN material play the crucial role for inducing the large carrier mobility, a principle that could be applied to many other 2D vdW heterostructures.

  19. Predictors of radiation-induced esophageal toxicity in patients with non-small-cell lung cancer treated with three-dimensional conformal radiotherapy

    Singh, Anurag K.; Lockett, Mary Ann; Bradley, Jeffrey D.

    2003-01-01

    Purpose: To evaluate the incidence and clinical/dosimetric predictors of acute and late Radiation Therapy Oncology Group Grade 3-5 esophageal toxicity in patients with non-small-cell lung cancer (NSCLC) treated with definitive three-dimensional conformal radiotherapy (3D-CRT). Methods and Materials: We retrospectively reviewed the charts of 207 consecutive patients with NSCLC who were treated with high-dose, definitive 3D-CRT between March 1991 and December 1998. This population consisted of 107 men and 100 women. The median age was 67 years (range 31-90). The following patient and treatment parameters were studied: age, gender, race, performance status, sequential chemotherapy, concurrent chemotherapy, presence of subcarinal nodes, pretreatment weight loss, mean dose to the entire esophagus, maximal point dose to the esophagus, and percentage of volume of esophagus receiving >55 Gy. All doses are reported without heterogeneity corrections. The median prescription dose to the isocenter in this population was 70 Gy (range 60-74) delivered in 2-Gy daily fractions. All patients were treated once daily. Acute and late esophageal toxicities were graded by Radiation Therapy Oncology Group criteria. Patient and clinical/dosimetric factors were coded and correlated with acute and late Grade 3-5 esophageal toxicity using univariate and multivariate regression analyses. Results: Of 207 patients, 16 (8%) developed acute (10 patients) or late (13 patients) Grade 3-5 esophageal toxicity. Seven patients had both acute and late Grade 3-5 esophageal toxicity. One patient died (Grade 5 esophageal toxicity) of late esophageal perforation. Concurrent chemotherapy, maximal point dose to the esophagus >58 Gy, and a mean dose to the entire esophagus >34 Gy were significantly associated with a risk of Grade 3-5 esophageal toxicity on univariate analysis. Concurrent chemotherapy and maximal point dose to the esophagus >58 Gy retained significance on multivariate analysis. Of 207 patients

  20. Developing a methodology for three-dimensional correlation of PET-CT images and whole-mount histopathology in non-small-cell lung cancer.

    Dahele, M; Hwang, D; Peressotti, C; Sun, L; Kusano, M; Okhai, S; Darling, G; Yaffe, M; Caldwell, C; Mah, K; Hornby, J; Ehrlich, L; Raphael, S; Tsao, M; Behzadi, A; Weigensberg, C; Ung, Y C

    2008-10-01

    Understanding the three-dimensional (3D) volumetric relationship between imaging and functional or histopathologic heterogeneity of tumours is a key concept in the development of image-guided radiotherapy. Our aim was to develop a methodologic framework to enable the reconstruction of resected lung specimens containing non-small-cell lung cancer (NSCLC), to register the result in 3D with diagnostic imaging, and to import the reconstruction into a radiation treatment planning system. We recruited 12 patients for an investigation of radiology-pathology correlation (RPC) in nsclc. Before resection, imaging by positron emission tomography (PET) or computed tomography (CT) was obtained. Resected specimens were formalin-fixed for 1-24 hours before sectioning at 3-mm to 10-mm intervals. To try to retain the original shape, we embedded the specimens in agar before sectioning. Consecutive sections were laid out for photography and manually adjusted to maintain shape. Following embedding, the tissue blocks underwent whole-mount sectioning (4-mum sections) and staining with hematoxylin and eosin. Large histopathology slides were used to whole-mount entire sections for digitization. The correct sequence was maintained to assist in subsequent reconstruction. Using Photoshop (Adobe Systems Incorporated, San Jose, CA, U.S.A.), contours were placed on the photographic images to represent the external borders of the section and the extent of macroscopic disease. Sections were stacked in sequence and manually oriented in Photoshop. The macroscopic tumour contours were then transferred to MATLAB (The Mathworks, Natick, MA, U.S.A.) and stacked, producing 3D surface renderings of the resected specimen and embedded gross tumour. To evaluate the microscopic extent of disease, customized "tile-based" and commercial confocal panoramic laser scanning (TISSUEscope: Biomedical Photometrics, Waterloo, ON) systems were used to generate digital images of whole-mount histopathology sections

  1. Does Motion Assessment With 4-Dimensional Computed Tomographic Imaging for Non–Small Cell Lung Cancer Radiotherapy Improve Target Volume Coverage?

    Naseer Ahmed

    2017-03-01

    Full Text Available Introduction: Modern radiotherapy with 4-dimensional computed tomographic (4D-CT image acquisition for non–small cell lung cancer (NSCLC captures respiratory-mediated tumor motion to provide more accurate target delineation. This study compares conventional 3-dimensional (3D conformal radiotherapy (3DCRT plans generated with standard helical free-breathing CT (FBCT with plans generated on 4D-CT contoured volumes to determine whether target volume coverage is affected. Materials and methods: Fifteen patients with stage I to IV NSCLC were enrolled in the study. Free-breathing CT and 4D-CT data sets were acquired at the same simulation session and with the same immobilization. Gross tumor volume (GTV for primary and/or nodal disease was contoured on FBCT (GTV_3D. The 3DCRT plans were obtained, and the patients were treated according to our institution’s standard protocol using FBCT imaging. Gross tumor volume was contoured on 4D-CT for primary and/or nodal disease on all 10 respiratory phases and merged to create internal gross tumor volume (IGTV_4D. Clinical target volume margin was 5 mm in both plans, whereas planning tumor volume (PTV expansion was 1 cm axially and 1.5 cm superior/inferior for FBCT-based plans to incorporate setup errors and an estimate of respiratory-mediated tumor motion vs 8 mm isotropic margin for setup error only in all 4D-CT plans. The 3DCRT plans generated from the FBCT scan were copied on the 4D-CT data set with the same beam parameters. GTV_3D, IGTV_4D, PTV, and dose volume histogram from both data sets were analyzed and compared. Dice coefficient evaluated PTV similarity between FBCT and 4D-CT data sets. Results: In total, 14 of the 15 patients were analyzed. One patient was excluded as there was no measurable GTV. Mean GTV_3D was 115.3 cm 3 and mean IGTV_4D was 152.5 cm 3 ( P = .001. Mean PTV_3D was 530.0 cm 3 and PTV_4D was 499.8 cm 3 ( P = .40. Both gross primary and nodal disease analyzed separately were larger

  2. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  3. Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

    Stroscio, Michael A

    2003-01-01

    This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

  4. Multiferroicity in oxide thin films and heterostructures

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  5. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  6. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  7. In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

    Liu, Zheng; Ma, Lulu; Shi, Gang; Zhou, Wu; Gong, Yongji; Lei, Sidong; Yang, Xuebei; Zhang, Jiangnan; Yu, Jingjiang; Hackenberg, Ken P.; Babakhani, Aydin; Idrobo, Juan-Carlos; Vajtai, Robert; Lou, Jun; Ajayan, Pulickel M.

    2013-02-01

    Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice constant difference of only 2%. However, graphene is a zero-bandgap semiconductor with remarkably high carrier mobility at room temperature, whereas an atomically thin layer of h-BN is a dielectric with a wide bandgap of ~5.9 eV. Accordingly, if precise two-dimensional domains of graphene and h-BN can be seamlessly stitched together, hybrid atomic layers with interesting electronic applications could be created. Here, we show that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN atomic layers. Our approach can create periodic arrangements of domains with size ranging from tens of nanometres to millimetres. The resulting graphene/h-BN atomic layers can be peeled off the growth substrate and transferred to various platforms including flexible substrates. We also show that the technique can be used to fabricate two-dimensional devices, such as a split closed-loop resonator that works as a bandpass filter.

  8. Validation of a Numerical Model for Dynamic Three-Dimensional Railway Bridge Analysis by Comparison with a Small-Scale Laboratory Model

    Bucinskas, Paulius; Sneideris, Jonas; Agapii, Liuba

    2018-01-01

    The aim of the paper is analyse to what extent a small-scale experimental model can be applied in order to develop and validate a numerical model for dynamic analysis of a multi-span railway bridge interacting with the underlying soil. For this purpose a small-scale model of a bridge structure is...

  9. Two-dimensional Semiconductor-Superconductor Hybrids

    Suominen, Henri Juhani

    This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

  10. Synthesis of core-shell heterostructured Cu/Cu2O nanowires monitored by in situ XRD as efficient visible-light photocatalysts

    Chen, Wei

    2013-01-01

    Core-shell heterostructured Cu/Cu2O nanowires with a high aspect ratio were synthesized from Cu foam using a novel oxidation/reduction process. In situ XRD was used as an efficient tool to acquire phase transformation details during the temperature-programmed oxidation of Cu foam and the subsequent reduction process. Based on knowledge of the crucial phase transformation, optimal synthesis conditions for producing high-quality CuO and core-shell Cu/Cu2O nanowires were determined. In favor of efficient charge separation induced by the special core-shell heterostructure and the advanced three-dimensional spatial configuration, Cu/Cu2O nanowires exhibited superior visible-light activity in the degradation of methylene blue. The present study illustrates a novel strategy for fabricating efficiently core-shell heterostructured nanowires and provides the potential for developing their applications in electronic devices, for environmental remediation and in solar energy utilization fields. This journal is © The Royal Society of Chemistry.

  11. Axial Ge/Si nanowire heterostructure tunnel FETs

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  12. Giant magnetoelectric effect in pure manganite-manganite heterostructures

    Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar; Majumdar, Pinaki; Littlewood, Peter B.

    2017-11-01

    Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

  13. Micromagnetic simulation of exchange coupled ferri-/ferromagnetic heterostructures

    Oezelt, Harald, E-mail: harald.oezelt@fhstp.ac.at [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Kovacs, Alexander; Reichel, Franz; Fischbacher, Johann; Bance, Simon [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Gusenbauer, Markus [Center for Integrated Sensor Systems, Danube University Krems, Viktor Kaplan-Straße 2, A-2700 Wiener Neustadt (Austria); Schubert, Christian; Albrecht, Manfred [Institute of Physics, Chemnitz University of Technology, Reichenhainer Straße 70, D-09126 Chemnitz (Germany); Institute of Physics, University of Augsburg, Universitätsstraße 1, D-86159 Augsburg (Germany); Schrefl, Thomas [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Center for Integrated Sensor Systems, Danube University Krems, Viktor Kaplan-Straße 2, A-2700 Wiener Neustadt (Austria)

    2015-05-01

    Exchange coupled ferri-/ferromagnetic heterostructures are a possible material composition for future magnetic storage and sensor applications. In order to understand the driving mechanisms in the demagnetization process, we perform micromagnetic simulations by employing the Landau–Lifshitz–Gilbert equation. The magnetization reversal is dominated by pinning events within the amorphous ferrimagnetic layer and at the interface between the ferrimagnetic and the ferromagnetic layer. The shape of the computed magnetization reversal loop corresponds well with experimental data, if a spatial variation of the exchange coupling across the ferri-/ferromagnetic interface is assumed. - Highlights: • We present a model for exchange coupled ferri-/ferromagnetic heterostructures. • We incorporate the microstructural features of the amorphous ferrimagnet. • A distribution of interface exchange coupling is assumed to fit experimental data. • The reversal is dominated by pinning within the ferrimagnet and at the interface.

  14. High ionic conductivity in confined bismuth oxide-based heterostructures

    Simone Sanna

    2016-12-01

    Full Text Available Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3 exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ, deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  15. High ionic conductivity in confined bismuth oxide-based heterostructures

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...... of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk....

  16. Efficient photocarrier injection in a transition metal oxide heterostructure

    Muraoka, Y; Ueda, Y; Hiroi, Z

    2002-01-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO sub 2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO sub 2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO sub 2 /TiO sub 2 :Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO sub 2 :Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO sub 2. (letter to the editor)

  17. Ag/CdS heterostructural composites: Fabrication, characterizations and photocatalysis

    Liu, Yang; Chi, Mei; Dong, Hailiang; Jia, Husheng; Xu, Bingshe; Zhang, Zhuxia

    2014-01-01

    Highlights: • Novel Ag/CdS core–shell heterostructural composites were fabricated using a two-step chemical method. • A formation mechanism of Ag/CdS heterostructural composites. • The photocatalytic activity of Ag/CdS heterostructural composites was found to be improved. • PL emissions are markedly quenched in the Ag/CdS composites than in CdS nanoparticles. - Abstract: Ag/CdS heterostructural materials were successfully synthesized by ultrasound-assisted polyols and hydrothermal method. Under hydrothermal condition, thiourea adsorbed on Ag nanowires releases S 2− ions, which react with vicinal Cd 2+ ions to form CdS clusters on Ag nanowires. Thereafter, the Ag/CdS composites grow into core–shell structure through CdS aggregation, Ostwald ripening, and preferential growth. The obtained core–shell structures and morphologies were investigated by XRD, SEM, and TEM; the experimental results indicate that the composites are composed of Ag nanowires serving as the core and CdS particles as the shell. The photocatalytic property of Ag/CdS core–shell materials was then investigated in detail. Comparing studies on the degradation of methylene blue were employed by using pure CdS, pure Ag, and Ag/CdS composites, respectively. The results show that the Ag/CdS composites possess higher photocatalytic degradation efficiency. Moreover, the Ag/CdS composites show improved stability, and the photocatalytic activity remains almost unchanged after four recycles. The enhanced photocatalytic effect for Ag/CdS composites is mainly attributed to the photogenerated electron transfer from CdS to Ag nanowire, while photogenerated holes still remain in CdS's valence band. Consequently, the effective separation of photogenerated electrons and holes and the resulting OH radicals improve the photocatalytic efficiency of Ag/CdS composites greatly

  18. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  19. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  20. Tailored Assembly of 2D Heterostructures beyond Graphene

    2017-05-11

    attainable. Here we propose our synthetic approach to construct graphene-based 3D heterostructures composed of 2D layered materials with finely tunable...DISTRIBUTION A: Distribution approved for public release. AF Office Of Scientific Research (AFOSR)/ IOA Arlington, Virginia 22203 Air Force Research ...Public Release 13. SUPPLEMENTARY NOTES 14. ABSTRACT Rapid progress in graphene research has attracted further research attentions for other 2D layered

  1. Two dimensional electron systems for solid state quantum computation

    Mondal, Sumit

    Two dimensional electron systems based on GaAs/AlGaAs heterostructures are extremely useful in various scientific investigations of recent times including the search for quantum computational schemes. Although significant strides have been made over the past few years to realize solid state qubits on GaAs/AlGaAs 2DEGs, there are numerous factors limiting the progress. We attempt to identify factors that have material and design-specific origin and develop ways to overcome them. The thesis is divided in two broad segments. In the first segment we describe the realization of a new field-effect induced two dimensional electron system on GaAs/AlGaAs heterostructure where the novel device-design is expected to suppress the level of charge noise present in the device. Modulation-doped GaAs/AlGaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect that is tunable over a density range of 6.5x10 10cm-2 to 2.6x1011cm-2 . Device design, fabrication, and low temperature (T=0.3K) characterization results are discussed. The demonstrated device-design overcomes several existing limitations in the fabrication of field-induced 2DEGs and might find utility in hosting nanostructures required for making spin qubits. The second broad segment describes our effort to correlate transport parameters measured at T=0.3K to the strength of the fractional quantum Hall state observed at nu=5/2 in the second Landau level of high-mobility GaAs/AlGaAs two dimensional

  2. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  3. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  4. Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

    Yamasaki, Yuji; Moriya, Rai; Arai, Miho; Masubuchi, Satoru; Pyon, Sunseng; Tamegai, Tsuyoshi; Ueno, Keiji; Machida, Tomoki

    2017-12-01

    Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature T C ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction.

  5. Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

    Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

    Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.

  6. Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices

    Kim, Daehee; Kim, Hanul; Yun, Wan Soo; Watanabe, Kenji; Taniguchi, Takashi; Rho, Heesuk; Bae, Myung-Ho

    2018-04-01

    Understanding the energy transport by charge carriers and phonons in two-dimensional (2D) van der Waals heterostructures is essential for the development of future energy-efficient 2D nanoelectronics. Here, we performed in situ spatially resolved Raman thermometry on an electrically biased graphene channel and its hBN substrate to study the energy dissipation mechanism in graphene/hBN heterostructures. By comparing the temperature profile along the biased graphene channel with that along the hBN substrate, we found that the thermal boundary resistance between the graphene and hBN was in the range of (1-2) ~ × 10-7 m2 K W-1 from ~100 °C to the onset of graphene break-down at ~600 °C in air. Consideration of an electro-thermal transport model together with the Raman thermometry conducted in air showed that a doping effect occurred under a strong electric field played a crucial role in the energy dissipation of the graphene/hBN device up to T ~ 600 °C.

  7. Stability and electronic structure studies of LaAlO3/SrTiO3 (110) heterostructures

    Du Yan-Ling; Wang Chun-Lei; Li Ji-Chao; Xu Pan-Pan; Zhang Xin-Hua; Liu Jian; Su Wen-Bin; Mei Liang-Mo

    2014-01-01

    The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAlO 3 /SrTiO 3 (110). By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAlO 3 /SrTiO 3 (110) heterostructure, the Ti—O octahedron distortions cause the Ti t 2g orbitals to split into the two-fold degenerate d xz /d yz and nondegenerate d xy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t 2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaAlO 3 and SrTiO 3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAlO 3 /SrTiO 3 (110). (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Study of interface properties in LaAlO{sub 3}/SrTiO{sub 3} heterostructures

    Thiel, Stefan Patrick

    2009-02-19

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  9. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  10. Influence of the electric polarization on carrier transport and recombinaton dynamics in ZnO-based heterostructures

    Brandt, Matthias

    2010-08-16

    The present thesis deals with the influence of the electric polarization on properties of free carriers in ZnO-based semiconductor heterostructures. Thereby especially transport properties of free carriers as well as their recombination dynamics are studied. The thesis treats four main topics. The first main topic lies on the phsical properties of the applied materials, here the connection of the band gap and the lattice constant of thin Mg{sub x}Zn{sub 1-x}O films and their magnesium content is described. Furthermore the morphology of such films is discussed. Different substrates and deposition conditions are thereby detailedly considered. The second main topic treats the properties of undoped and phosphorus doped thin ZnO and Mg{sub x}Zn{sub 1-x}O films. The structural, transport, and luminescence properties are here compared and conclusions drawn on the growth conditions. In the third main topic quantum effects on ZnO/Mg{sub x}Zn{sub 1-x}O interfaces are treated. Hereby especially the influence of the electric polarization is considered. The presence of a two-dimensional electron gas is proved, and the necessary conditions for the generation of the so-called confined Stark effect are explained. Especially the growth-relevant parameters are considered. The fourth main topic represent coupling phenomena in ZnO/BaTiO{sub 3} heterostructures. Thereby first the experimentally observed properties of different heterostructures are shown, which were grown on different substrates. Here structural and transport properties hold the spotlight. A model for the description of the formation of space-charge zones in such heterostructures is introduced and applied for the description of the experimental results. The usefulness of the ferroelectric properties of the material BaTiO{sub 3} in combination with semiconducting ZnO were studied. For this ferroelectric field effect transistors were fabricated under application of both materials. The principle suitedness of the

  11. Method for generation of tunable far infrared radiation from two-dimensional plasmons

    Katz, Joseph (Inventor)

    1989-01-01

    Tunable far infrared radiation is produced from two-dimensional plasmons in a heterostructure, which provides large inversion-layer electron densities at the heterointerface, without the need for a metallic grating to couple out the radiation. Instead, a light interference pattern is produced on the planar surface of the heterostructure using two coherent laser beams of a wavelength selected to be strongly absorbed by the heterostructure in order to penetrate through the inversion layer. The wavelength of the far infrared radiation coupled out can then be readily tuned by varying the angle between the coherent beams, or varying the wavelength of the two interfering coherent beams, thus varying the periodicity of the photoconductivity grating to vary the wavelength of the far infrared radiation being coupled out.

  12. Ordering phenomena in transition-metal-oxide heterostructures

    Frano Pereira, Alex Manuel

    2014-01-27

    This doctoral work presents a study of ordered ground states of transition metal oxide compounds and multilayers using resonant elastic soft x-ray scattering. The technique has developed over the last decades and become especially useful when sample sizes are limited like the case of nanometer-scale films and superlattices. By scattering with photon energies on resonance with the element's electronic transitions, it is an element-specific, sensitive tool providing a combination of spectroscopic and spatial information. The thesis is divided into two central topics. The first part focuses on the investigation of perovskite-type, rare-earth nickelate heterostructures. X-rays tuned to the Ni L{sub 3}-edge were used to unveil unprecedented diffraction evidence of long range magnetic order in LaNiO{sub 3}-RXO{sub 3} (RXO{sub 3} = LaAlO{sub 3}, DyScO{sub 3}) superlattices. We report on the appearance of magnetic order in such systems with a propagation vector of Q{sub SDW} = ((1)/(4),(1)/(4),l) in pseudocubic notation, similar to bulk rare earth nickelates with R ≠ La. With LaNiO{sub 3} being paramagnetic in its bulk form, the magnetic Bragg peak is only present in superlattices where the thickness of the LaNiO{sub 3} layers approaches the 2-dimensional limit. Besides the thickness dependence, the magnetic order was probed on samples grown on varying strain-inducing substrates. Azimuthal scans around Q{sub SDW} were done to determine the orientation of the spin spiral under these different conditions. We will explain how the reorientation of the spins can be understood by the magneto-crystalline anisotropy which is determined by the relative occupation of the Ni d-orbitals via spin-orbit coupling. First steps towards control of the spin spiral's orientation will be outlined, and along with the high remanent conductivity found in the magnetic spiral state, an outlook for metallic antiferromagnetic spintronics will be discussed. The second part of this thesis

  13. Ordering phenomena in transition-metal-oxide heterostructures

    Frano Pereira, Alex Manuel

    2014-01-01

    This doctoral work presents a study of ordered ground states of transition metal oxide compounds and multilayers using resonant elastic soft x-ray scattering. The technique has developed over the last decades and become especially useful when sample sizes are limited like the case of nanometer-scale films and superlattices. By scattering with photon energies on resonance with the element's electronic transitions, it is an element-specific, sensitive tool providing a combination of spectroscopic and spatial information. The thesis is divided into two central topics. The first part focuses on the investigation of perovskite-type, rare-earth nickelate heterostructures. X-rays tuned to the Ni L 3 -edge were used to unveil unprecedented diffraction evidence of long range magnetic order in LaNiO 3 -RXO 3 (RXO 3 = LaAlO 3 , DyScO 3 ) superlattices. We report on the appearance of magnetic order in such systems with a propagation vector of Q SDW = ((1)/(4),(1)/(4),l) in pseudocubic notation, similar to bulk rare earth nickelates with R ≠ La. With LaNiO 3 being paramagnetic in its bulk form, the magnetic Bragg peak is only present in superlattices where the thickness of the LaNiO 3 layers approaches the 2-dimensional limit. Besides the thickness dependence, the magnetic order was probed on samples grown on varying strain-inducing substrates. Azimuthal scans around Q SDW were done to determine the orientation of the spin spiral under these different conditions. We will explain how the reorientation of the spins can be understood by the magneto-crystalline anisotropy which is determined by the relative occupation of the Ni d-orbitals via spin-orbit coupling. First steps towards control of the spin spiral's orientation will be outlined, and along with the high remanent conductivity found in the magnetic spiral state, an outlook for metallic antiferromagnetic spintronics will be discussed. The second part of this thesis will address the observation of charge density

  14. A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

    Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

    2018-01-01

    A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.

  15. Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

    Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

    2018-02-01

    Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T power and high-frequency electronics.

  16. Excitons in van der Waals heterostructures

    Latini, Simone; Olsen, Thomas; Thygesen, Kristian Sommer

    2015-01-01

    The existence of strongly bound excitons is one of the hallmarks of the newly discovered atomically thin semiconductors. While it is understood that the large binding energy is mainly due to the weak dielectric screening in two dimensions, a systematic investigation of the role of screening on two......-dimensional (2D) excitons is still lacking. Here we provide a critical assessment of a widely used 2D hydrogenic exciton model, which assumes a dielectric function of the form epsilon(q) = 1 + 2 pi alpha q, and we develop a quasi-2D model with a much broader applicability. Within the quasi-2D picture, electrons...... exciton binding energies in both isolated and supported 2D materials. For isolated 2D materials, the quasi-2D treatment yields results almost identical to those of the strict 2D model, and both are in good agreement with ab initio many-body calculations. On the other hand, for more complex structures...

  17. Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices

    2016-03-01

    ARL-TR-7618 ● MAR 2016 US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in...US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices by Blair C...Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

  18. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S G; Lazarev, V V; Yablonskii, S V; Palto, S P [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  19. Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

    Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.

    2004-01-01

    We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we

  20. Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

    Chen, Yunzhong; Trier, Felix; Kasama, Takeshi

    2015-01-01

    The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Rem...

  1. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures.

    Burg, G William; Prasad, Nitin; Fallahazad, Babak; Valsaraj, Amithraj; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; Wang, Qingxiao; Kim, Moon J; Register, Leonard F; Tutuc, Emanuel

    2017-06-14

    We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe 2 . We observe large interlayer current densities of 2 and 2.5 μA/μm 2 and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 and 300 K, respectively.

  2. Localization and interaction effects in GaAs/AlGaAs heterostructures modified by 4He-ion implantation

    Taboryski, R.; Veje, E.; Lindelof, P.E.

    1990-01-01

    Magnetoresistance is used to study localization and interaction in the 2-dimensional electron layer of 4 He-ion implanted GaAs/AlGaAs modulation doped heterostructures. At very low magnetic fields weak localization magnetoresistance can be fitted to theory, thereby determining the diffusion constant and the phase relaxation rate. An unexpected saturation of the phase relaxation rate at low temperature was found to have an interesting relation to mobility and sample size. In the magnetic field range, where the cyclotron radius becomes of the order of the mean free path, the magnetoresistance was related to the effect of electron-electron interaction. By comparison of the magnetoresistance at different implantation doses, we extracted a remnant quantum correction to the conductivity, which has no earlier been noticed. In samples with two subbands populated interband scattering is observed to cause spin-orbit effects in the weak localization magnetoresistance. (orig.)

  3. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

    1993-01-01

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

  4. Experimental study on the spin-orbit coupling property in low-dimensional semiconductor structures

    Zhao, Hongming

    2010-01-01

    The spin-orbit coupling and optical properties have been studied in several low-dimensional semiconductor structures. First, the spin dynamics in (001) GaAs/AlGaAs two-dimensional electron gas was investigated by time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic. The results show that the electron density in two-dimensional electron gas channel strongly affects the Rashba spin-orbit coupling. Then, a large anisotropy of the magnitude of in-plane conduction electron g factor in asymmetric (001) GaAs/AlGaAs QWs was observed and its tendency of temperature dependence was studied. Second, the experimental study of the in-plane-orientation dependent spin splitting in the C(0001) GaN/AlGaN two-dimensional electron gas at room temperature was reported. The measurement of circular photo-galvanic effect current clearly shows the isotropic in-plane spin splitting in this system for the first time. Third, the first measurement of conduction electron g factor in GaAsN at room temperature was done by using time resolved Kerr rotation technique. It demonstrates that the g factor can be modified drastically by introducing a small amount of nitrogen in GaAs bulk. Finally, the optical characteristic of indirect type II transition in a series of size and shape-controlled linear CdTe/CdSe/CdTe heterostructure nano-rods was studied by steady-state and time resolved photoluminescence. Results show the steady transfer from the direct optical transition (type I) within CdSe to the indirect transition (type II) between CdSe/CdTe as the length of the nano-rods increases. (author)

  5. The 3-Dimensional Analysis of the Efficacy of a Belly-Board Device for the Displacement of Small Bowel During Pelvic Irradiation

    Lee, Kyung Ja

    2008-01-01

    To evaluate the efficacy of a belly-board device (BBD) in reducing the volume of small bowel during four-field pelvic irradiation. Materials and Methods: Twenty-two cancer patients (14 uterine cervical cancer, 6 rectal cancer, and 2 endometrial cancer) scheduled to receive pelvic irradiation were selected for this study. Two sets of CT images were taken with and without the belly-board device using the Siemens 16 channel CT scanner. All patients were set in the prone position. The CT images were transferred to a treatment planning system for dose calculation and volume measurements. The external surfaces of small bowel and the bladder were contoured on all CT scans and the 4-pelvic fields were added. The dose-volume-histogram of the bladder and small bowel, with and without the BBD, were plotted and analyzed. Results: In all patients, the total small bowel volume included in the irradiated fields was reduced when the BBD was used. The mean volume reduction was 35% (range, 1-79%) and was statistically significant (p<0.001). The reduction in small bowel volume receiving 10-100% of the prescribed dose was statistically significant when the BBD was used in all cases. Almost no change in the total bladder volume involved was observed in the field (<8 cc, p=0.762). However, the bladder volume receiving 90% of the prescribed dose was 100% in 15/22 patients (68%) and 90-99% in 7/22 patients (32%) with the BBD. In comparison, the bladder volume receiving 90% of the prescribed dose was 100% in 10/22 patients (45%), 90-99% in 7/22 patients (32%), and 80-89% in 5/22 patients (23%) without the BBD. When the BBD was used, an increase in the bladder volume receiving a high dose range was observed Conclusion: This study shows that the use of a BBD for the treatment of cancer in the pelvic area significantly improves small bowel sparing. However, since the BBD pushed the bladder into the treatment field, the bladder volume receiving the high dose could increase. Therefore it is

  6. Interface properties of SrTiO3-based heterostructures studied by spectroscopy and high-resolution microscopy

    Pfaff, Florian Georg

    2017-01-01

    Oxide heterostructures can exhibit a variety of unexpected electronic and magnetic phenomena at their interfaces. A prominent example is the interface in LaAlO 3 /SrTiO 3 heterostructures where a two-dimensional electron system (2DES) forms if the LaAlO 3 thickness equals or exceeds a critical thickness of four unit cells. Similar to LaAlO 3 /SrTiO 3 an interface 2DES above a critical overlayer thickness has been observed in γ-Al 2 O 3 /SrTiO 3 . However, the electron mobility as well as the sheet carrier density exceed those of LaAlO 3 /SrTiO 3 heterostructures by more than one order of magnitude. This thesis is concerned with the growth and the characterization of these two types of interface systems with the main focus on the analysis of the physical properties at the interface and the understanding of their leading mechanisms. In regard to the sample fabrication it is demonstrated in the present thesis that the hitherto established growth routine of LaAlO 3 /SrTiO 3 by pulsed laser deposition has to be altered and optimized for the growth of γ-Al 2 O 3 . It is shown that growth monitoring by analyzing reflection high energy electron diffraction (RHEED) intensity oscillations is hindered by the formation of surface wave resonances. In order to avoid this effect, a modified growth geometry has to be used whereby also in this heterostructure systems monitoring of the layer-by-layer growth of γ-Al 2 O 3 /SrTiO 3 heterostructures by electron diffraction can be achieved. A so-called electronic reconstruction is discussed as the possible driving mechanism for the 2DES formation in LaAlO 3 /SrTiO 3 . In this scenario, the built-up potential within the polar LaAlO 3 overlayer is compensated by a charge transfer from the sample surface to the top most layers of the non-polar SrTiO 3 substrate. Furthermore, the properties of these heterostructures strongly depend on the used growth conditions. In the present work, for instance, a significant increase in the charge

  7. Optical magnetism in planar metamaterial heterostructures.

    Papadakis, Georgia T; Fleischman, Dagny; Davoyan, Artur; Yeh, Pochi; Atwater, Harry A

    2018-01-18

    Harnessing artificial optical magnetism has previously required complex two- and three-dimensional structures, such as nanoparticle arrays and split-ring metamaterials. By contrast, planar structures, and in particular dielectric/metal multilayer metamaterials, have been generally considered non-magnetic. Although the hyperbolic and plasmonic properties of these systems have been extensively investigated, their assumed non-magnetic response limits their performance to transverse magnetic (TM) polarization. We propose and experimentally validate a mechanism for artificial magnetism in planar multilayer metamaterials. We also demonstrate that the magnetic properties of high-index dielectric/metal hyperbolic metamaterials can be anisotropic, leading to magnetic hyperbolic dispersion in certain frequency regimes. We show that such systems can support transverse electric polarized interface-bound waves, analogous to their TM counterparts, surface plasmon polaritons. Our results open a route for tailoring optical artificial magnetism in lithography-free layered systems and enable us to generalize the plasmonic and hyperbolic properties to encompass both linear polarizations.

  8. Interface engineered construction of porous g-C3N4/TiO2 heterostructure for enhanced photocatalysis of organic pollutants

    Li, Ya-Nan; Chen, Zhao-Yang; Wang, Min-Qiang; Zhang, Long-zhen; Bao, Shu-Juan

    2018-05-01

    A porous g-C3N4/TiO2 with hierarchical heterostructure has been successfully fabricated through a in situ assembling of small needle-like TiO2 on the surface of ultrathin g-C3N4 sheets. The ultrathin g-C3N4 sheets with carbon vacancies and rich hydroxyl groups were found to facilitate the nucleation and in situ growth of TiO2 and also to modulate the surface chemical activity of the g-C3N4/TiO2 hierarchical heterostructure. The as-designed photocatalytic heterojunction degraded Acid Orange with 82% efficiency after 10 min under simulated solar light, and possessed excellent cycle stability. Relative physical characterizations and photochemical experiments reveal that engineering the interface/surface of g-C3N4 plays a vital role in effectively constructing heterostructures of g-C3N4/TiO2, thus realizing efficient photoinduced electron-hole separation during photocatalytic process.

  9. Inter-layer and intra-layer heat transfer in bilayer/monolayer graphene van der Waals heterostructure: Is there a Kapitza resistance analogous?

    Rajabpour, Ali; Fan, Zheyong; Vaez Allaei, S. Mehdi

    2018-06-01

    Van der Waals heterostructures have exhibited interesting physical properties. In this paper, heat transfer in hybrid coplanar bilayer/monolayer (BL-ML) graphene, as a model layered van der Waals heterostructure, was studied using non-equilibrium molecular dynamics (MD) simulations. The temperature profile and inter- and intra-layer heat fluxes of the BL-ML graphene indicated that, there is no fully developed thermal equilibrium between layers and the drop in the average temperature profile at the step-like BL-ML interface is not attributable to the effect of Kapitza resistance. By increasing the length of the system up to 1 μm in the studied MD simulations, the thermally non-equilibrium region was reduced to a small area near the step-like interface. All MD results were compared to a continuum model and a good match was observed between the two approaches. Our results provide a useful understanding of heat transfer in nano- and micro-scale layered materials and van der Waals heterostructures.

  10. Band Alignment Determination of Two-Dimensional Heterojunctions and Their Electronic Applications

    Chiu, Ming-Hui

    2018-05-09

    Two-dimensional (2D) layered materials such as MoS2 have been recognized as high on-off ratio semiconductors which are promising candidates for electronic and optoelectronic devices. In addition to the use of individual 2D materials, the accelerated field of 2D heterostructures enables even greater functionalities. Device designs differ, and they are strongly controlled by the electronic band alignment. For example, photovoltaic cells require type II heterostructures for light harvesting, and light-emitting diodes benefit from multiple quantum wells with the type I band alignment for high emission efficiency. The vertical tunneling field-effect transistor for next-generation electronics depends on nearly broken-gap band alignment for boosting its performance. To tailor these 2D layered materials toward possible future applications, the understanding of 2D heterostructure band alignment becomes critically important. In the first part of this thesis, we discuss the band alignment of 2D heterostructures. To do so, we firstly study the interlayer coupling between two dissimilar 2D materials. We conclude that a post-anneal process could enhance the interlayer coupling of as-transferred 2D heterostructures, and heterostructural stacking imposes similar symmetry changes as homostructural stacking. Later, we precisely determine the quasi particle bandgap and band alignment of the MoS2/WSe2 heterostructure by using scan tunneling microscopy/spectroscopy (STM/S) and micron-beam X-ray photoelectron spectroscopy (μ-XPS) techniques. Lastly, we prove that the band alignment of 2D heterojunctions can be accurately predicted by Anderson’s model, which has previously failed to predict conventional bulk heterostructures. In the second part of this thesis, we develop a new Chemical Vapor Deposition (CVD) method capable of precisely controlling the growth area of p- and n-type transition metal dichalcogenides (TMDCs) and further form lateral or vertical 2D heterostructures. This

  11. Resonant Tunneling in Photonic Double Quantum Well Heterostructures

    Cox Joel

    2010-01-01

    Full Text Available Abstract Here, we study the resonant photonic states of photonic double quantum well (PDQW heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.

  12. Transport in silicon-germanium heterostructures

    Chrastina, Daniel

    2001-01-01

    The work presented here describes the electrical characterization of n- and p-type strained silicon-germanium systems. Theories of quantum transport m low magnetic fields at low temperature are discussed m terms of weak-localization: the traditional theory is shown not to account for the dephasing in a 2-dimensional hole gas behaving in a metallic manner and emergent alternative theories, while promising, require refinement. The mobility as a function of sheet density is measured in a p-type pseudomorphic Si 0.5 Ge 0.5 across the temperature range 350mK-282K; it is shown that calculations of the mobility based on semi-classical scattering mechanisms fail below 10K where quantum transport effects become relevant. A room temperature Hall scattering factor has been extracted. A new functional form has been presented to fit the resistivity as a function of temperature, below 20K: traditional theories of screening and weak localization appear not to be applicable. It is also demonstrated that simple protection circuitry is essential if commercial-scale devices are to be meaningfully investigated. Mobility spectrum analysis is performed on an n-type strained-silicon device. Established analysis methods are discussed and a new method is presented based on the Bryan's Algorithm approach to maximum entropy. The breakdown of the QHE is also investigated: the critical current density compares well to that predicted by an existing theory. Finally, devices in which both electron and hole gases can be induced are investigated. However, it is shown that the two cannier species never co-exist. Design rules are presented which may allow more successful structures to be created. Results are presented which demonstrate the success and the utility of implanted contacts which selectively reach different regions of the structure. (author)

  13. Optimising the visibility of graphene and graphene oxide on gold with multilayer heterostructures.

    Velický, Matěj; Hendren, William R; Donnelly, Gavin Eugene; Katzen, Joel Michael; Bowman, Robert M; Huang, Fumin

    2018-04-17

    Metals have been increasingly used as substrates in devices based on two-dimensional (2D) materials. However, the high reflectivity of bulk metals results in low optical contrast (<3%) and therefore poor visibility of transparent mono- and few-layer 2D materials on these surfaces. Here we demonstrate that by engineering the complex reflectivity of a purpose-designed multilayer heterostructure composed of thin Au films (2 - 8 nm) on SiO2/Si substrate, the optical contrast of graphene and graphene oxide (GO) can be significantly enhanced in comparison to bulk Au, up to about 3 and 5 times, respectively. In particular, we achieved ~17% optical contrast for monolayer GO, which is even 2 times higher than that on bare SiO2/Si substrate. The experimental results are in good agreement with theoretical simulations. This concept is demonstrated for Au, but the methodology is applicable to other metals and can be adopted to design a variety of high-contrast metallic substrates. This will facilitate research and applications of 2D materials in areas such as plasmonics, photonics, catalysis and sensors. © 2018 IOP Publishing Ltd.

  14. Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion.

    Li, Changli; Cao, Qi; Wang, Faze; Xiao, Yequan; Li, Yanbo; Delaunay, Jean-Jacques; Zhu, Hongwei

    2018-05-08

    Graphene and two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant interest due to their unique properties that cannot be obtained in their bulk counterparts. These atomically thin 2D materials have demonstrated strong light-matter interactions, tunable optical bandgap structures and unique structural and electrical properties, rendering possible the high conversion efficiency of solar energy with a minimal amount of active absorber material. The isolated 2D monolayer can be stacked into arbitrary van der Waals (vdWs) heterostructures without the need to consider lattice matching. Several combinations of 2D/3D and 2D/2D materials have been assembled to create vdWs heterojunctions for photovoltaic (PV) and photoelectrochemical (PEC) energy conversion. However, the complex, less-constrained, and more environmentally vulnerable interface in a vdWs heterojunction is different from that of a conventional, epitaxially grown heterojunction, engendering new challenges for surface and interface engineering. In this review, the physics of band alignment, the chemistry of surface modification and the behavior of photoexcited charge transfer at the interface during PV and PEC processes will be discussed. We will present a survey of the recent progress and challenges of 2D/3D and 2D/2D vdWs heterojunctions, with emphasis on their applicability to PV and PEC devices. Finally, we will discuss emerging issues yet to be explored for 2D materials to achieve high solar energy conversion efficiency and possible strategies to improve their performance.

  15. New faces of porous Prussian blue: interfacial assembly of integrated hetero-structures for sensing applications.

    Kong, Biao; Selomulya, Cordelia; Zheng, Gengfeng; Zhao, Dongyuan

    2015-11-21

    Prussian blue (PB), the oldest synthetic coordination compound, is a classic and fascinating transition metal coordination material. Prussian blue is based on a three-dimensional (3-D) cubic polymeric porous network consisting of alternating ferric and ferrous ions, which provides facile assembly as well as precise interaction with active sites at functional interfaces. A fundamental understanding of the assembly mechanism of PB hetero-interfaces is essential to enable the full potential applications of PB crystals, including chemical sensing, catalysis, gas storage, drug delivery and electronic displays. Developing controlled assembly methods towards functionally integrated hetero-interfaces with adjustable sizes and morphology of PB crystals is necessary. A key point in the functional interface and device integration of PB nanocrystals is the fabrication of hetero-interfaces in a well-defined and oriented fashion on given substrates. This review will bring together these key aspects of the hetero-interfaces of PB nanocrystals, ranging from structure and properties, interfacial assembly strategies, to integrated hetero-structures for diverse sensing.

  16. All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

    Dankert, André; Dash, Saroj

    Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing. Its fundamental concepts (creation, manipulation and detection of spin polarization) have been demonstrated in semiconductors and spin transistor structures using electrical and optical methods. However, an unsolved challenge is the realization of all-electrical methods to control the spin polarization in a transistor manner at ambient temperatures. Here we combine graphene and molybdenum disulfide (MoS2) in a van der Waals heterostructure to realize a spin field-effect transistor (spin-FET) at room temperature. These two-dimensional crystals offer a unique platform due to their contrasting properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in MoS2. The gate-tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel yields spins to interact with high SOC material and allows us to control the spin polarization and lifetime. This all-electrical spin-FET at room temperature is a substantial step in the field of spintronics and opens a new platform for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

  17. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures

    2018-02-19

    AFRL-AFOSR-JP-TR-2018-0012 Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures PHILIP Kim HARVARD COLLEGE PRESIDENT...21-02-2018 2.  REPORT TYPE      Final 3.  DATES COVERED (From - To)      15 Aug 2015 to 14 Feb 2017 4.  TITLE AND SUBTITLE Nano Electronics on...NOTES 14.  ABSTRACT We report molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films

  18. Spin-polarized photoemission from SiGe heterostructures

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  19. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A.; Somov, P. A.; Terukov, E. I.

    2015-01-01

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics

  20. Epitaxial CdSe-Au nanocrystal heterostructures by thermal annealing.

    Figuerola, Albert; van Huis, Marijn; Zanella, Marco; Genovese, Alessandro; Marras, Sergio; Falqui, Andrea; Zandbergen, Henny W; Cingolani, Roberto; Manna, Liberato

    2010-08-11

    The thermal evolution of a collection of heterogeneous CdSe-Au nanosystems (Au-decorated CdSe nanorods, networks, vertical assemblies) prepared by wet-chemical approaches was monitored in situ in the transmission electron microscope. In contrast to interfaces that are formed during kinetically controlled wet chemical synthesis, heating under vacuum conditions results in distinct and well-defined CdSe/Au interfaces, located at the CdSe polar surfaces. The high quality of these interfaces should make the heterostructures more suitable for use in nanoscale electronic devices.

  1. Upper critical field of Mo-Ni heterostructures

    Uher, C.; Watson, W.J.; Cohn, J.L.; Schuller, I.K.

    1985-12-01

    Upper critical field and its anisotropy have been measured on two very short wavelength Mo-Ni heterostructures of different degrees of perfection, lambda = 13.8A (disordered structure) and lambda = 16.6A (layered structure). In both cases the parallel critical field has an unexpected temperature dependence, a large and temperature dependent anisotropy, and over 60% enhancement over the Clogston-Chandrasekhar limit. Data are fit to the Werthamer-Helfand-Hohenberg theory and the spin-orbit scattering times are found to be 1.79 x 10 -13 s and 2 x 10 -13 s, respectively

  2. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  3. Synthesis and their enhanced photoelectrochemical performance of ZnO nanoparticle-loaded CuO dandelion heterostructures under solar light

    Dong, Guanying; Du, Bin; Liu, Lei; Zhang, Weiwei; Liang, Yujie; Shi, Honglong; Wang, Wenzhong, E-mail: wzhwangmuc@163.com

    2017-03-31

    Highlights: • ZnO/CuO nanoparticle/dandelion heterostructures were fabricated for the first time. • ZnO/CuO nanoparticle/dandelion heterostructures show enhanced PEC activity. • ZnO nanoparticle loading contents have significant effect on PEC water splitting. • Interaction, charge transfer and enhanced mechanism of photocatalyst were proposed. • p-n junction drives the photoexcited charges efficient separation. - Abstract: Here we report an easy and large-scale synthesis of three-dimensional (3D) ZnO nanoparticle-loaded CuO dandelion (denoted as n-ZnO/p-CuO nanoparticle/dandelion) heterostructures and their photoelectrochemical (PEC) water splitting under simulated solar light illumination. CuO dandelions were fabricated by a facile and cost-effective chemical strategy, in which the ribbon-like CuO nanoplates were first formed and then assembled into dandelion-like architectures. ZnO nanoparticle-loaded CuO dandelion heterostructures were fabricated by calcining Zn(Ac){sub 2}-loaded CuO dandelions. High resolution transmission electron microscope (HRTEM) studies demonstrate that intimate p-n junction is built between p-CuO and n-ZnO interface. The n-ZnO/p-CuO nanoparticle/dandelion photoelectrodes exhibit significant improvement in PEC water splitting to CuO dandelion photoelectrodes. The correlation between photocurrents and different loading contents of ZnO nanoparticles (NPs) is studied in which the n-ZnO/p-CuO nanoparticle/dandelion heterostructures with loading 4.6 wt% ZnO NPs show higher photocathodic current. The efficient separation of the photogenerated electrons and holes driven by the intimate p-n junction between p-type CuO and n-type ZnO interface is mainly contributed to the enhanced photoanode current. The achieved results in the present study offer a very useful strategy for designing p-n junction photoelectrodes for efficiency and low-cost PEC cells for clean solar hydrogen production.

  4. Synthesis; characterization; and growth mechanism of Au/CdS heterostructured nanoflowers constructed with nanorods

    Kong Qingcheng; Wu Rong; Feng Xiumei; Ye Cui; Hu Guanqi; Hu Jianqiang; Chen Zhiwu

    2011-01-01

    Research highlights: → Well-defined and flower-shaped Au/CdS heterostructured nanocrystals were for the first time synthesized. → The Au-nanorod-induced hydrothermal strategy was for the first time used to fabricate metal/semiconductor heterostructured nanomaterials. → A preliminary crystal growing mechanism was also proposed for better understanding the growth process of other Au/semiconductor heterostructure nanocrystals. → The route devised here should also be extendable to fabricate other Au/semiconductor heterostructure nanomaterials. - Abstract: Gold/sulfide cadmium (Au/CdS) heterostructured nanocrystals with a flower-like shape were for the first time synthesized through an Au-nanorod-induced hydrothermal method. The Au/CdS nanoflowers possessed the average size of about 350 nm while the nanorods constructing the nanoflowers had the average diameter, length, and aspect ratio of approximately 50 nm, 100 nm, and 2, respectively. Our method suggested that Au-nanorods played a decisive role in the formation of Au/CdS heterostructured nanoflowers, demonstrated by high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), energy-dispersive X-ray spectroscopy (EDS), and UV-visible absorption spectroscopy measurements. A preliminary experiment model to reveal the Au/CdS growth mechanism was also put forward. The route devised here should be perhaps extendable to fabricate other Au/semiconductor heterostructured nanomaterials, and the Au/CdS nanoflowers may have potential applications in nanodevices, biolabels, and clinical detection and diagnosis.

  5. New naphtho[1,2-b:5,6-b‧]difuran based two-dimensional conjugated small molecules for photovoltaic application

    Peng, Hongjian; Luan, Xiangfeng; Qiu, Lixia; Li, Hang; Liu, Ye; Zou, Yingping

    2017-10-01

    Two new A-D-A small molecules with alkoxyphenyl and alkylthiophenyl-substituted naphtho[1,2-b:5,6-b‧]difuran (NDF) as the central building block named NDFPO-DPP and NDFPS-DPP were synthesized and firstly used as donor materials in organic solar cells (OSCs). The effects of the alkoxyphenyl and alkylthiophenyl side chains on the NDF unit have been investigated. With a single atom variation from O to S, NDFPS-DPP exhibited lower HOMO energy levels than its counterpart NDFPO-DPP, which resulted in enhanced Voc. The device based on NDFPO-DPP with thermal annealing exhibited a better PCE of 3.10% due to the higher and more balanced hole and electron mobilities. The investigations show that NDF could be a promising building block in OSCs via rational molecular structure design and device optimizations.

  6. Observation of the i = 1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructures

    Lindelof, P.E.; Bruus, H.; Taboryski, R.; Soerensen, C.B.

    1989-01-01

    An inverted and a normal GaAs/AlGaAs interface grown back to back in a socalled selectively doped double heterostructure (SD DH) has been studied in magnetic fields up to 12 tesla and at temperatures down to 0.3 K. The longitudinal resistance goes to zero at minima of the Shubnikov-de Haas oscillations. The Hall resistivity is found to exhibit the quantum Hall effect. By etching the surface of the double heterostructure wafer we create an unbalance in the density of electrons in the two parallel two-dimensional electronic sheets. Although we in this way create only a modest change in the electron densities, we observe a significant change in the Shubnikov-de Haas oscillations, which can be interpreted as a beat between the oscillations of two electron layers with different densities. At the same time we observe a significant variation of the width of the quantum Hall steps. The most astonishing feature of our results is a clear quantum Hall plateou at 1/2 filling in each of the two parallel layers observed at temperatures below 1 K at a magnetic field above 10 T. Weak localization was also studied and such experiments are consistent with two parallel and independent two-dimensional electronic layers. (orig.)

  7. Novel aspects of diluted and digital magnetic heterostructures

    Bonanni, A.

    1999-04-01

    In the present work novel aspects of diluted and digital II-VI-based heterostructures containing Mn ions are investigated. All the structures under study were fabricated by means of molecular beam epitaxy. Digital magnetic heterostructures have been prepared by incorporating discrete (sub)monolayers of the purely magnetic semiconductor MnTe into otherwise non magnetic CdTe quantum wells embedded in CdMgTe barriers. Formation and binding energy of magnetic polarons have been investigated in these structures and compared with the diluted case. Reflectance difference spectroscopy (RDS) performed ex-situ allowed to distinguish between signals due to the crystal anisotropy solely and those induced by the presence a magnetic elements. The problem of p-type doping of bulk diluted magnetic semiconductors II-VI-based is tackled. During and upon growth of ZnMnTe highly doped with N, in-situ RDS was carried out in order to investigate intra-ion transitions within the half filled 3d shell of Mn. Transport measurements and magnetometry at low temperature were performed to study, on the tracks of recent theoretical works, the influence of free carriers on the interaction between magnetic ions. As expected, indications of ferromagnetic ordering were found for the DMS with the highest concentration of carriers. Special attention was given to the formation of Mn islands on a II-VI substrate and to their change in morphology upon overgrowth with a mismatched material. A rich zoology of regularly shaped nanostructures could be produced. (author)

  8. Fabrication and transport studies of graphene-superconductor heterostructures

    Hu, Jiuning; Wu, Tailung; Tian, Jifa; Chen, Yong

    2014-03-01

    Recently, graphene based stacked heterostructures, e.g., graphene and boron nitride (BN) multi-layers, have attracted much attention as a system to study novel interaction-driven physics (e.g., excitonic condensation) and perform interesting measurements (eg. Coulomb drag and tunneling). The realm of graphene-superconductor heterostructures remains less unexplored, while such a system offers various interesting prospects (effects of superconductor vortices lattices on over-layering graphene and quantum Hall states, where novel phenomena such as anionic excitations have been predicted). We have used polyvinyl alcohol (PVA) based carrier films and a micro-manipulator to transfer mechanically exfoliated flakes and fabricated graphene/BN/NbSe2 structures to study the transport properties of graphene in close proximity to electrically isolated superconducting NbSe2 films. The NbSe2 film shows the superconducting transition temperature of ~7 K and upper critical field of ~3.5 T after device fabrication. We will present results from magneto-transport in graphene and graphene-NbSe2 Coulomb drag and tunneling measurements.

  9. Band offsets in ITO/Ga2O3 heterostructures

    Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito

    2017-11-01

    The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be -0.78 ± 0.30 eV, while the conduction band offset was determined to be -0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.

  10. Resonant Photonic States in Coupled Heterostructure Photonic Crystal Waveguides

    Sabarinathan J

    2010-01-01

    Full Text Available Abstract In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors.

  11. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  12. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  13. Nanoscale heterostructures with molecular-scale single-crystal metal wires.

    Kundu, Paromita; Halder, Aditi; Viswanath, B; Kundu, Dipan; Ramanath, Ganpati; Ravishankar, N

    2010-01-13

    Creating nanoscale heterostructures with molecular-scale (synthesis of nanoscale heterostructures with single-crystal molecular-scale Au nanowires attached to different nanostructure substrates. Our method involves the formation of Au nanoparticle seeds by the reduction of rocksalt AuCl nanocubes heterogeneously nucleated on the substrates and subsequent nanowire growth by oriented attachment of Au nanoparticles from the solution phase. Nanoscale heterostructures fabricated by such site-specific nucleation and growth are attractive for many applications including nanoelectronic device wiring, catalysis, and sensing.

  14. Three-dimensional (3D)- computed tomography bronchography and angiography combined with 3D-video-assisted thoracic surgery (VATS) versus conventional 2D-VATS anatomic pulmonary segmentectomy for the treatment of non-small cell lung cancer.

    She, Xiao-Wei; Gu, Yun-Bin; Xu, Chun; Li, Chang; Ding, Cheng; Chen, Jun; Zhao, Jun

    2018-02-01

    Compared to the pulmonary lobe, the anatomical structure of the pulmonary segment is relatively complex and prone to variation, thus the risk and difficulty of segmentectomy is increased. We compared three-dimensional computed tomography bronchography and angiography (3D-CTBA) combined with 3D video-assisted thoracic surgery (3D-VATS) to perform segmentectomy to conventional two-dimensional (2D)-VATS for the treatment of non-small cell lung cancer (NSCLC). We retrospectively reviewed the data of randomly selected patients who underwent 3D-CTBA combined with 3D-VATS (3D-CTBA-VATS) or 2D-VATS at the Department of Thoracic Surgery, The First Affiliated Hospital of Soochow University Hospital, from January 2014 to May 2017. The operative duration of 3D group was significantly shorter than the 2D group (P 0.05). The extent of intraoperative bleeding and postoperative drainage in the 3D group was significantly lower than in the 2D group (P 3D group was shorter than in the 2D group (P 0.05). However, hemoptysis and pulmonary air leakage (>3d) occurred significantly less frequently in the 3D than in the 2D group (P 3D-CTBA-VATS is a more accurate and smooth technique and leads to reduced intraoperative and postoperative complications. © 2018 The Authors. Thoracic Cancer published by China Lung Oncology Group and John Wiley & Sons Australia, Ltd.

  15. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-01-01

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N 2 -rich (O 2 -lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: → Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. → Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. → CNTs in heterostructures decompose between 600 and 750 deg. C in N 2 -rich atmosphere. → Metallic species in heterostructures were oxidized at higher temperatures.

  16. Cartilage destruction in small joints by rheumatoid arthritis: assessment of fat-suppressed three-dimensional gradient-echo MR pulse sequences in vitro

    Uhl, M.; Allmann, K.H.; Hauer, M.P.; Langer, M.; Ihling, C.; Conca, W.

    1998-01-01

    Purpose. To assess the accuracy of different MR sequences for the detection of articular cartilage abnormalities in rheumatoid arthritis. Design and patients. Ten metacarpophalangeal joints and 10 metatarsophalangeal joints (specimens from arthritis patients undergoing ablative joint surgery) were examined with a fat-suppressed (FS) 3D FLASH, a FS 3D FISP, a FS 2D fast spin-echo T2-weighted, and a 2D FS spin-echo T1-weighted sequence. Each cartilage lesion and each cortical lesion was graded from 0 to 4 (modified Outerbridge staging system). Subsequently, the results of each sequence were compared with the macroscopic findings and statistically tested against each other. Results. The study shows that 3D gradient-echo sequences with fat suppression were best for imaging and grading of cartilage lesions in arthritis of the small joints of the hands and feet. Using 3D techniques, all grade 2, grade 3, and grade 4 lesions of cartilage or cortical bone were detected. Conclusion. FS 3D gradient-echo techniques were best for the detection and grading of hyaline cartilage and subchondral bone lesions in rheumatoid arthritis. MRI has a great potential as an objective method of evaluating cartilage damage and bone erosions in rheumatoid arthritis. (orig.)

  17. Cartilage destruction in small joints by rheumatoid arthritis: assessment of fat-suppressed three-dimensional gradient-echo MR pulse sequences in vitro

    Uhl, M.; Allmann, K.H.; Hauer, M.P.; Langer, M. [Department of Diagnostic Radiology, University Hospital Freiburg (Germany); Ihling, C. [Department of Pathology, University Hospital Freiburg, Freiburg (Germany); Conca, W. [Department of Rheumatology, University Hospital Freiburg (Germany)

    1998-12-01

    Purpose. To assess the accuracy of different MR sequences for the detection of articular cartilage abnormalities in rheumatoid arthritis. Design and patients. Ten metacarpophalangeal joints and 10 metatarsophalangeal joints (specimens from arthritis patients undergoing ablative joint surgery) were examined with a fat-suppressed (FS) 3D FLASH, a FS 3D FISP, a FS 2D fast spin-echo T2-weighted, and a 2D FS spin-echo T1-weighted sequence. Each cartilage lesion and each cortical lesion was graded from 0 to 4 (modified Outerbridge staging system). Subsequently, the results of each sequence were compared with the macroscopic findings and statistically tested against each other. Results. The study shows that 3D gradient-echo sequences with fat suppression were best for imaging and grading of cartilage lesions in arthritis of the small joints of the hands and feet. Using 3D techniques, all grade 2, grade 3, and grade 4 lesions of cartilage or cortical bone were detected. Conclusion. FS 3D gradient-echo techniques were best for the detection and grading of hyaline cartilage and subchondral bone lesions in rheumatoid arthritis. MRI has a great potential as an objective method of evaluating cartilage damage and bone erosions in rheumatoid arthritis. (orig.) With 5 figs., 19 refs.

  18. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions

    Watson, John D.

    examining transport in a series of two-dimensional hole gases in which the dopant setback distance and the Al mole fraction in the barriers of the quantum well were varied. The hole density was tuned in this way from 0.18 -- 1.9 x 1011 cm-2. Surprisingly, the mobility at T = 0.3 K was found to peak at 2.3 x 10 6 cm-2 at an intermediate density of 6.5 x 10 10 cm-2. Self-consistent Schrodinger/Poisson calculations were performed for each wafer to examine the scattering rates due to a variety of potentials at low temperature. The drop in mobility at high density could be accounted for with the inclusion of interface roughness scattering, but using the same interface roughness scattering parameters for similar two-dimensional electron gases produced inconsistent results. This leaves open the possibility of contributions from other scattering mechanisms in the hole samples at high density. Chapter 6 presents an in-depth study of in-situ backgated two-dimensional gases used for studying the fragile fractional quantum Hall states in the 2nd Landau level. It was found that leakage currents as small as 4 pA could cause noticeable heating of the electron gas if the lattice was not properly thermally anchored to the cryostat. However, it was also found that when the heterostructure design and device fabrication recipe were properly optimized, gate voltages as large as 4 V could be applied before the leakage turned on, allowing the density to be tuned from full depletion to over 4 x 1011 cm-2. As a result, heating effects at dilution refrigerator temperatures were negligible and the gap at nu = 5/2 could be tuned continuously with density to a maximum value of 625 mK, the largest reported to date. An unusual evolution of the reentrant integer quantum Hall states as a function of density is also reported. Such devices should prove useful for the study of electron correlations in nanostructures in the 2nd Landau level.

  19. Formation of stable small cell number three-dimensional ovarian cancer spheroids using hanging drop arrays for preclinical drug sensitivity assays.

    Raghavan, Shreya; Ward, Maria R; Rowley, Katelyn R; Wold, Rachel M; Takayama, Shuichi; Buckanovich, Ronald J; Mehta, Geeta

    2015-07-01

    Ovarian cancer grows and metastasizes from multicellular spheroidal aggregates within the ascites fluid. Multicellular tumor spheroids are therefore physiologically significant 3D in vitro models for ovarian cancer research. Conventional hanging drop cultures require high starting cell numbers, and are tedious for long-term maintenance. In this study, we generate stable, uniform multicellular spheroids using very small number of ovarian cancer cells in a novel 384 well hanging drop array platform. We used novel tumor spheroid platform and two ovarian cancer cell lines (A2780 and OVCAR3) to demonstrate the stable incorporation of as few as 10 cells into a single spheroid. Spheroids had uniform geometry, with projected areas (42.60×10(3)μm-475.22×10(3)μm(2) for A2780 spheroids and 37.24×10(3)μm(2)-281.01×10(3)μm(2) for OVCAR3 spheroids) that varied as a function of the initial cell seeding density. Phalloidin and nuclear stains indicated cells formed tightly packed spheroids with demarcated boundaries and cell-cell interaction within spheroids. Cells within spheroids demonstrated over 85% viability. 3D tumor spheroids demonstrated greater resistance (70-80% viability) to cisplatin chemotherapy compared to 2D cultures (30-50% viability). Ovarian cancer spheroids can be generated from limited cell numbers in high throughput 384 well plates with high viability. Spheroids demonstrate therapeutic resistance relative to cells in traditional 2D culture. Stable incorporation of low cell numbers is advantageous when translating this research to rare patient-derived cells. This system can be used to understand ovarian cancer spheroid biology, as well as carry out preclinical drug sensitivity assays. Copyright © 2015 Elsevier Inc. All rights reserved.

  20. DIMENSIONALITY OF INTRA-ORGANIZATIONAL CONFLICT AND THE CHALLENGES FOR HUMAN RESOURCE MANAGEMENT IN SMALL AND MEDIUM SCALE ENTERPRISES IN NIGERIA

    Samuel Remi

    2018-03-01

    Full Text Available There is a reasonable level of acceptance amongst policy makers, academia and international development agencies of the criticality of Small and Medium-sized Enterprises (SMEs as important agents of development particularly in employment and income generation and the provision of goods and services. Successive governments in Nigeria continue to promote policies and agendas targeted to raise the competitiveness of the sector as part of the diversification of the economy and promote foreign direct investment (FDI. These efforts are yet to manifest in any significant reduction in importation of basic goods as well as double-digit unemployment rate. Several studies have focused on aspects of SME’s performance with a sparse attention to the criticality of the impacts of conflict in the performance of the organisations leading to a wide gap in knowledge as to whether a conflict situation actually occurs in the SMEs, and if they do, how do they manifest? What are the impacts on performance and how effective are the administrative tools for managing them? This study attempts to bridge this gap. We adopt a survey method using a sample of 224 employees across a spectrum of industries located in Lagos, Ogun and Kwara States of the Federation of the Republic of Nigeria. While the prevalence of conflict was established in the study amongst the employees, compensation, reward and performance rating issues are most frequent sources of the conflict with behavioural manifestation including productivity scale down, battering the reputation and image of the employers as well as discouraging potential applicants. The study also found that most of the administrative tools to manage conflict are not considered very effective while a variation in the gender awareness to conflict was observed at the level of statistical significance. The study recommends conflict minimization strategies through a proper goal definition, conflict management skill upgrades with

  1. Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

    Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

    2012-10-01

    Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

  2. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

    2013-01-01

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

  3. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  4. Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures

    Nosho, B. Z; Barvosa-Carter, W; Yang, M. J; Bennett, B. R; Whitman, L. J

    2000-01-01

    ...) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001...

  5. The photoelectric yield technique for the characterization of the semiconductor heterostructures

    Evangelisti, F.; Di Gaspare, L.

    1998-01-01

    The paper discusses the use of the photoelectric yield spectroscopy for investigating surface defects and interfaces. Few examples are presented that clearly show the usefulness of the techniques. The heterostructures discussed include crystalline/amorphous and crystalline/crystalline systems

  6. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    Pyshkin, Sergei

    1995-01-01

    .... MBE and Laser Vacuum Epitaxy (LVE) growth methods for semiconductor-semiconductor (SS) and semiconductor-crystalline dielectric-semiconductor heterostructures are considered as well as experimental facilities for these processes are elaborated.

  7. Charge selective contact on ultra-thin In(OH)xS y/Pb(OH) xS y heterostructure prepared by SILAR

    Gavrilov, S.; Oja, I.; Lim, B.; Belaidi, A.; Bohne, W.; Strub, E.; Roehrich, J.; Lux-Steiner, M.-Ch.; Dittrich, Th.

    2006-01-01

    Ultra-thin In(OH) x S y /Pb(OH) x S y heterostructures were formed by the wet chemical SILAR (successive ion layer adsorption and reaction) technique. ERDA (elastic recoil detection analysis) was used for stoichiometry analysis. The heterocontacts were conditioned by joint annealing of the two layers at different low temperatures in air. The charge selectivity was demonstrated with various small area solar cell structures. The results are discussed on the base of formation of bonds between sulphide clusters and passivation of defects with hydrogen containing species in hydroxy-sulphides. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures

    Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.

    2017-12-01

    Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and wave functions are obtained by solving Schrödinger equation with the finite difference method. The dispersion relations and potentials of the optical phonons are given by the transfer matrix method. The mobility of the two dimensional electron gas influenced by the optical phonons in Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on the theory of Lei-Ting force balance equation. It is found that the scattering from the half-space phonons is the main factor affecting the electronic mobility, and the influence of the other phonons can be ignored. The results show that the mobility decreases with increasing the thicknesses of Al2O3 and AlN layers, but there is no definite relationship between the mobility and the thickness of AlGaN barrier. The mobility is obviously reduced by increasing Al component in AlGaN crystal to show that the effect of ternary mixed crystals is important. It is also found that the mobility increases first and then decreases as the increment of the fixed charges, but decreases always with increasing temperature. The heterostructures constructed here can be good candidates as metal-oxide-semiconductor high-electron-mobility-transistors since they have higher electronic mobility due to the influence from interface phonons weakened by the AlN interlayer.

  9. Magnetic chirality induced from Ruderman-Kittel-Kasuya-Yosida interaction at an interface of a ferromagnet/heavy metal heterostructure

    Shibuya, Taira; Matsuura, Hiroyasu; Ogata, Masao

    2016-01-01

    We study a microscopic derivation and the properties of the Dzyaloshinskii-Moriya interaction (DMI) between local magnetic moments in ferromagnet/heavy metal heterostructures. First, we derive DMI by Ruderman-Kittel-Kasuya-Yosida interaction through electrons in a heavy metal with Rashba spin orbit interaction (SOI). Next, we study the dependences of the DMI on the Rashba SOI, lattice constant, and chemical potential. We find that the DMI amplitude increases linearly when the Rashba SOI is small, has a maximum when the Rashba SOI is comparable to the hopping integral, and decreases when the Rashba SOI is large. The sign of the DMI not only changes depending on the sign of the Rashba SOI but also the lattice constants and the chemical potential of the heavy metal. The implications of the obtained results for experiments are discussed. (author)

  10. Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure

    Kjærgaard, Morten; Nichele, F; Suominen, Henri Juhani

    2016-01-01

    topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al......, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e(2)/h...

  11. A facile and efficient dry transfer technique for two-dimensional Van derWaals heterostructure

    Xie, Li; Du, Luojun; Lu, Xiaobo; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

    2017-08-01

    Not Available Project supported by the National Basic Research Program of China (Grant Nos. 2013CB934500 and 2013CBA01602), the National Natural Science Foundation of China (Grant Nos. 61325021, 11574361, and 51572289), the Key Research Program of Frontier Sciences, CAS, (Grant No. QYZDB-SSW-SLH004), and the Strategic Priority Research Program (B), CAS (Grant No. XDB07010100).

  12. Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS$_{2}$ Heterostructures

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, Gukhyung

    2013-01-01

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermio...

  13. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

    Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

    2016-06-01

    Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Skyrmions and Novel Spin Textures in FeGe Thin Films and Artificial B20 Heterostructures

    Ahmed, Adam Saied

    Skyrmions are magnetic spin textures that have a non-zero topological winding number associated with them. They have attracted much interest recently since they can be as small as 1 nm and could be the next generation of magnetic memory and logic. First, we grow epitaxial films of FeGe by molecular beam epitaxy and characterized the skyrmion properties. This had led us to image skyrmions in real-space with Lorentz transmission electron microscopy for the first time in the United States. Next, from an extensive series of thin and thick films, we have experimentally shown the existence of a magnetic surface state in FeGe and, consequently, any skyrmion material for the first time. Complementary theoretical calculations supported the existence of chiral bobbers--a surface state only predicted in 2015. Next, we fabricated for the first time a new class of skyrmion materials: B20 superlattices. These novel heterostructures of [FeGe/MnGe/CrGe] have now opened the door for tunable skyrmion systems with both Dresselhaus and Rashba Dzyaloshinskii-Moriya interactions. Additionally, we perform resonant soft x-ray scattering to image magnetic spin textures in reciprocal space for FeGe thin films in transmission. We have accomplished the removal of substrate and left an isolated single-crystal FeGe film. Lastly, SrO is grown on graphene as a crystalline, atomically smooth, and pinhole free tunnel barrier for spin injection.

  15. Growth of ZnO heterostructures in an ultra compact MBE system

    Ruth, Marcel [University of Duisburg-Essen, Institute of Experimental Physics, Duisburg (Germany); University of Paderborn (Germany). Group Nanophotonics and Nanomaterials; Meier, Cedrik [University of Paderborn (Germany). Group Nanophotonics and Nanomaterials

    2009-07-01

    Due to its unique properties such as the large direct bandgap of 3.37 eV and its high exciton binding energy, zinc oxide (ZnO) is a very promising semiconductor for optoelectronic and photonic applications even at room temperature. By adding cadmium (Cd) or magnesium (Mg) the bandgap can be tuned between 3.0 eV and 4.0 eV. It has already been shown that plasma assisted molecular beam epitaxy (PA-MBE) is a very suitable technique for growing high-quality epilayers of ZnO. Especially for research issues small samples are often sufficient. By using ultra compact MBE-systems the running costs can be kept down. However, the special system geometry and the very compact design lead to high requirements on the system. It is not trivial that in such a system stoichiometric and homogeneous growth conditions be achieved anyway. Furthermore, very high growth-rates can be obtained. By working in the zinc- (Zn) or oxygen-rich (O) regime completely different surface morphologies free of any metallic clusters are created. We present a systematic study on the growth conditions in such a compact system. Especially, the determination of the flux is discussed, and the grown heterostructures are characterised for their usability for nanophotonic devices.

  16. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

    2014-01-01

    We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

  17. Inelastic light scattering by low-lying excitations of electrons in low-dimensional semiconductors

    Pellegrini, V. [NEST CNR-INFM and Scuola Normale Superiore, Pisa (Italy); Pinczuk, A. [Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey (United States)

    2006-11-15

    The low-dimensional electron systems that reside in artificial semiconductor heterostructures of great perfection are a contemporary materials base for explorations of collective phenomena. Studies of low-lying elementary excitations by inelastic light scattering offer insights on properties such energetics, interactions and spin magnetization. We review here recent light scattering results obtained from two-dimensional (2D) quantum fluids in semiconductor heterostructures under extreme conditions of low temperature and large magnetic field, where the quantum Hall phases are archetypes of novel behaviors. We also consider recent light scattering experiments that have probed the excitation spectra of few-electron states in semiconductor quantum dots. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Charge and Spin Transport in Graphene Heterostructures and Cr2Ge2Te6

    Lin, Zhisheng

    This dissertation summarizes my past work on hydrogenation of graphene, development of Al2O3 tunnel barrier, pressure effects on Cr2Ge 2Te6 (CGT), and proximity effects in graphene/WSe2 heterostructures. There are three main parts. The first part is the study of hydrogenation of graphene and the development of atomically smooth Al2O3 tunnel barrier. Graphene device is coated with hydrogen silsesquioxane (HSQ) resist and exposed with electron beam. Graphene is hydrogenated by forming the covalently bonds to the hydrogen atoms and transforms from sp2 to sp3 bonds. By breaking the inversion symmetry perpendicular to the graphene plane, Rashba spin orbit coupling (SOC) is enhanced. We characterized the hydrogenation effects by performing Raman spectroscopy measurements. A clear D and D' peak grow abruptly with small hydrogenation dosage and keep growing with higher dosage, indicating the increased defects density in graphene. Electrical transport properties are characterized by measuring the gate voltage dependence at different hydrogenation percentages: mobility decreases and graphene becomes more electron-doped upon hydrogenation. The hydrogenation process is reversible, which means the hydrogenation effects are almost gone after annealing. Nonlocal resistivity is 1 to 3 orders of magnitude larger than that of the pristine graphene, which cannot be accounted for by the ohmic contribution assuming uniform graphene channel. The problems of nonlocal measurement method are discussed. The rest of first part is focused on developing the atomically smooth Al2O3 tunnel barrier by sputtering a thin layer of aluminum first and oxidizing it in O 2 atmosphere. The second part is about the pressure effects on the magnetic anisotropy of CGT. Magnetoresistance of CGT bulk crystal is measured under applied hydrostatic pressures up to 2 GPa. Upon the application of hydrostatic pressure, we observe an induced transition of easy axis from c axis to the ab plane of the crystal

  19. High-efficiency super capacitors based on hetero-structured α-MnO2 nanorods

    Ghouri, Zafar Khan; Shaheer Akhtar, M.; Zahoor, Awan; Barakat, Nasser A.M.; Han, Weidong; Park, Mira; Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye; Kim, Hak Yong

    2015-01-01

    Highlights: • Hetero-structured α-MnO 2 nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg −1 with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO 2 ) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO 2 nanorods. Supercapacitive performance of the hetero-structured α-MnO 2 nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO 2 hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO 6 ] structure yield a significantly high specific capacitance of 298 Fg −1 at 5 mV s −1 and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO 2 electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport

  20. Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

    Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

    2018-01-01

    2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.