Gold dimer nanoantenna with slanted gap for tunable LSPR and improved SERS

KAUST Repository

Kessentini, Sameh

2014-02-13

We focus on improving the surface-enhanced Raman scattering (SERS) of dimer nanoantenna by tailoring the shape of the coupled nanoantennas extremities from rounded to straight or slanted ones. A numerical model based on the discrete dipole approximation method-taking into account periodicity, adhesion layer, and roughness-is first validated by comparison with localized surface plasmon resonance (LSPR) and SERS experiments on round-edged dimer nanoantennas and then used to investigate the effect of the straight or slanted gap in the dimer antenna. Simulations show that both LSPR and SERS can be tuned by changing the gap slanting angle. The SERS enhancement factor can also be improved by 2 orders of magnitude compared to the one reached using a rounded gap. Therefore, the slanting angle can be used as a new control parameter in the design of SERS substrates to guarantee stronger field confinement and higher sensitivity, especially as its feasibility is demonstrated. © 2014 American Chemical Society.

Gold dimer nanoantenna with slanted gap for tunable LSPR and improved SERS

KAUST Repository

Kessentini, Sameh; Barchiesi, Dominique; D'Andrea, Cristiano; Toma, Andrea; Guillot, Nicolas; Di Fabrizio, Enzo M.; Fazio, Barbara; Maragó , Onofrio M.; Gucciardi, Pietro Giuseppe; Lamy De La Chapelle, Marc L.

2014-01-01

We focus on improving the surface-enhanced Raman scattering (SERS) of dimer nanoantenna by tailoring the shape of the coupled nanoantennas extremities from rounded to straight or slanted ones. A numerical model based on the discrete dipole approximation method-taking into account periodicity, adhesion layer, and roughness-is first validated by comparison with localized surface plasmon resonance (LSPR) and SERS experiments on round-edged dimer nanoantennas and then used to investigate the effect of the straight or slanted gap in the dimer antenna. Simulations show that both LSPR and SERS can be tuned by changing the gap slanting angle. The SERS enhancement factor can also be improved by 2 orders of magnitude compared to the one reached using a rounded gap. Therefore, the slanting angle can be used as a new control parameter in the design of SERS substrates to guarantee stronger field confinement and higher sensitivity, especially as its feasibility is demonstrated. © 2014 American Chemical Society.

Methods of etching a substrate

International Nuclear Information System (INIS)

Cosmo, J.J.; Gambino, R.J.; Harper, J.M.E.

1979-01-01

The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail. (U.K.)

Methods of etching a substrate

Energy Technology Data Exchange (ETDEWEB)

Cosmo, J J; Gambino, R J; Harper, J M.E.

1979-05-16

The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail.

A slant type shape memory alloy

International Nuclear Information System (INIS)

Kanada, T.; Enokizono, M.

2000-01-01

A heat-treated Fe-based shape memory alloy (SMA) has compatible properties, magnetization and shape memory effect (SME). Since SME depends on the heat treatment conditions (temperature and time), we produced a slant-type SMA that has a gradient SME value in the longitudinal direction of the specimen. It is obvious that sheet specimen is superior to wire because the value of SME as a slant SME shows greater efficiency than that of wire

An etching mask and a method to produce an etching mask

DEFF Research Database (Denmark)

2016-01-01

The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

Directory of Open Access Journals (Sweden)

Zhan Zhan

2017-02-01

Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

Phase and vacancy behaviour of hard "slanted" cubes

Science.gov (United States)

van Damme, R.; van der Meer, B.; van den Broeke, J. J.; Smallenburg, F.; Filion, L.

2017-09-01

We use computer simulations to study the phase behaviour for hard, right rhombic prisms as a function of the angle of their rhombic face (the "slant" angle). More specifically, using a combination of event-driven molecular dynamics simulations, Monte Carlo simulations, and free-energy calculations, we determine and characterize the equilibrium phases formed by these particles for various slant angles and densities. Surprisingly, we find that the equilibrium crystal structure for a large range of slant angles and densities is the simple cubic crystal—despite the fact that the particles do not have cubic symmetry. Moreover, we find that the equilibrium vacancy concentration in this simple cubic phase is extremely high and depends only on the packing fraction and not the particle shape. At higher densities, a rhombic crystal appears as the equilibrium phase. We summarize the phase behaviour of this system by drawing a phase diagram in the slant angle-packing fraction plane.

Numerical Study on the Structural Performance of Steel Beams with Slant End-plate Connections

Directory of Open Access Journals (Sweden)

Farshad Zahmatkesh

Full Text Available Abstract Thermal effects can be one of the most harmful conditions that any steel structure should expect throughout its service life. To counteract this effect, a new beam, with a capability to dissipate thermally induced axial force by slanting of end-plate connection at both ends, is proposed. The beam was examined in terms of its elastic mechanical behavior under symmetric transverse load in presence of an elevated temperature by means of direct stiffness finite element model. The performance of such connection is defined under two resisting mechanisms; by friction force dissipation between faces of slant connection and by small upward crawling on slant plane. The presented numerical method is relatively easy and useful to evaluate the behavior of the proposed beam of various dimensions at different temperatures. Its applicability is evident through satisfactory results verification with those from experimental, analytical and commercially available finite element software. Based on the good agreement between theoretical and experimental methods, a series of design curves were developed as a safe-practical range for the slant end-plate connections which are depend on the conditions of the connection.

Deferred slanted-edge analysis: a unified approach to spatial frequency response measurement on distorted images and color filter array subsets.

Science.gov (United States)

van den Bergh, F

2018-03-01

The slanted-edge method of spatial frequency response (SFR) measurement is usually applied to grayscale images under the assumption that any distortion of the expected straight edge is negligible. By decoupling the edge orientation and position estimation step from the edge spread function construction step, it is shown in this paper that the slanted-edge method can be extended to allow it to be applied to images suffering from significant geometric distortion, such as produced by equiangular fisheye lenses. This same decoupling also allows the slanted-edge method to be applied directly to Bayer-mosaicked images so that the SFR of the color filter array subsets can be measured directly without the unwanted influence of demosaicking artifacts. Numerical simulation results are presented to demonstrate the efficacy of the proposed deferred slanted-edge method in relation to existing methods.

GaN Nanowires Synthesized by Electroless Etching Method

KAUST Repository

Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

2012-01-01

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

Directory of Open Access Journals (Sweden)

Iatsunskyi I. R.

2013-12-01

Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

A method to control the fabrication of etched optical fiber probes with nanometric tips

International Nuclear Information System (INIS)

Tao, Miaomiao; Gu, Ning; Huang, Lan; Jin, Yonglong

2010-01-01

Optical fiber probes with small size tips have attracted much interest in the areas of biosensor and near-field scanning optical microscopy. Chemical etching is a common useful method to fabricate such probes. But it is difficult to study or determine the etching time and control the shape of the fiber during the etching. In this work, a new method combining a fiber optic spectrometer with static chemical etching has been developed to fabricate optical fiber probe nanotips, where the fiber optic spectrometer is used to measure the optical signal during the etching. By calculating and analyzing the testing data, the relationship between the apex angle and the optical signal can be obtained. Accordingly, the process of fabricating optical fibers based on the optical signal can be controlled

High-uniformity centimeter-wide Si etching method for MEMS devices with large opening elements

Science.gov (United States)

Okamoto, Yuki; Tohyama, Yukiya; Inagaki, Shunsuke; Takiguchi, Mikio; Ono, Tomoki; Lebrasseur, Eric; Mita, Yoshio

2018-04-01

We propose a compensated mesh pattern filling method to achieve highly uniform wafer depth etching (over hundreds of microns) with a large-area opening (over centimeter). The mesh opening diameter is gradually changed between the center and the edge of a large etching area. Using such a design, the etching depth distribution depending on sidewall distance (known as the local loading effect) inversely compensates for the over-centimeter-scale etching depth distribution, known as the global or within-die(chip)-scale loading effect. Only a single DRIE with test structure patterns provides a micro-electromechanical systems (MEMS) designer with the etched depth dependence on the mesh opening size as well as on the distance from the chip edge, and the designer only has to set the opening size so as to obtain a uniform etching depth over the entire chip. This method is useful when process optimization cannot be performed, such as in the cases of using standard conditions for a foundry service and of short turn-around-time prototyping. To demonstrate, a large MEMS mirror that needed over 1 cm2 of backside etching was successfully fabricated using as-is-provided DRIE conditions.

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

Science.gov (United States)

Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

2016-05-01

Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

Introducing etch kernels for efficient pattern sampling and etch bias prediction

Science.gov (United States)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2018-01-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Segmented slant hole collimator for stationary cardiac SPECT: Monte Carlo simulations.

Science.gov (United States)

Mao, Yanfei; Yu, Zhicong; Zeng, Gengsheng L

2015-09-01

This work is a preliminary study of a stationary cardiac SPECT system. The goal of this research is to propose a stationary cardiac SPECT system using segmented slant-hole collimators and to perform computer simulations to test the feasibility. Compared to the rotational SPECT, a stationary system has a benefit of acquiring temporally consistent projections. The most challenging issue in building a stationary system is to provide sufficient projection view-angles. A GATE (GEANT4 application for tomographic emission) Monte Carlo model was developed to simulate a two-detector stationary cardiac SPECT that uses segmented slant-hole collimators. Each detector contains seven segmented slant-hole sections that slant to a common volume at the rotation center. Consequently, 14 view-angles over 180° were acquired without any gantry rotation. The NCAT phantom was used for data generation and a tailored maximum-likelihood expectation-maximization algorithm was used for image reconstruction. Effects of limited number of view-angles and data truncation were carefully evaluated in the paper. Simulation results indicated that the proposed segmented slant-hole stationary cardiac SPECT system is able to acquire sufficient data for cardiac imaging without a loss of image quality, even when the uptakes in the liver and kidneys are high. Seven views are acquired simultaneously at each detector, leading to 5-fold sensitivity gain over the conventional dual-head system at the same total acquisition time, which in turn increases the signal-to-noise ratio by 19%. The segmented slant-hole SPECT system also showed a good performance in lesion detection. In our prototype system, a short hole-length was used to reduce the dead zone between neighboring collimator segments. The measured sensitivity gain is about 17-fold over the conventional dual-head system. The gate Monte Carlo simulations confirm the feasibility of the proposed stationary cardiac SPECT system with segmented slant

Characterization of etch pit formation via the Everson-etching method on CdZnTe crystal surfaces from the bulk to the nanoscale

International Nuclear Information System (INIS)

Teague, Lucile C.; Duff, Martine C.; Cadieux, James R.; Soundararajan, Raji; Shick, Charles R.; Lynn, Kelvin G.

2011-01-01

A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

Comparison of fast neutron-induced tracks in plastics using the electrochemical etching method

International Nuclear Information System (INIS)

Cotter, S.J.; Gammage, R.B.; Thorngate, J.H.; Ziemer, P.L.

1979-01-01

Four plastics were examined by the electrochemical etching method for their suitability in registering fast neutron-induced recoil particle tracks. The plastics were cellulose acetate, cellulose triacetate, cellulose acetobutyrate and polycarbonate. Cellulose acetate and triacetate displayed high levels of water absorptivity during etching while the acetobutyrate foils cracked due to electromechanical stresses at high frequencies (>500 Hz). The clarity of the etched track was superior in the polycarbonate foils, suggesting the latter as the generally preferred dosimeter for fast neutrons. (author)

A novel fabrication method of silicon nano-needles using MEMS TMAH etching techniques

International Nuclear Information System (INIS)

Yan Sheping; Xu Yang; Yang Junyi; Wang Huiquan; Jin Zhonghe; Wang Yuelin

2011-01-01

Nano-needles play important roles in nanoscale operations. However, current nano-needle fabrication is usually expensive and controling the sizes and angles is complicated. We have developed a simple and low cost silicon nano-needle fabrication method using traditional microelectromechanical system (MEMS) tetramethyl ammonium hydroxide (TMAH) etching techniques. We take advantage of the fact that the decrease of the silicon etch rate in TMAH solutions exhibits an inverse fourth power dependence on the boron doping concentration in our nano-needle fabrication. Silicon nano-needles, with high aspect ratio and sharp angles θ as small as 2.9 deg., are obtained, which could be used for bio-sensors and nano-handling procedures, such as penetrating living cells. An analytic model is proposed to explain the etching evolution of the experimental results, which is used to predict the needle angle, length, and etching time. Based on our method, nano-needles with small acute angle θ can be obtained.

Method to make a single-step etch mask for 3D monolithic nanostructures

NARCIS (Netherlands)

Grishina, Diana; Harteveld, Cornelis A.M.; Woldering, L.A.; Vos, Willem L.

2015-01-01

Current nanostructure fabrication by etching is usually limited to planar structures as they are defined by a planar mask. The realization of three-dimensional (3D) nanostructures by etching requires technologies beyond planar masks. We present a method for fabricating a 3D mask that allows one to

A nontransferring dry adhesive with hierarchical polymer nanohairs.

Science.gov (United States)

Jeong, Hoon Eui; Lee, Jin-Kwan; Kim, Hong Nam; Moon, Sang Heup; Suh, Kahp Y

2009-04-07

We present a simple yet robust method for fabricating angled, hierarchically patterned high-aspect-ratio polymer nanohairs to generate directionally sensitive dry adhesives. The slanted polymeric nanostructures were molded from an etched polySi substrate containing slanted nanoholes. An angled etching technique was developed to fabricate slanted nanoholes with flat tips by inserting an etch-stop layer of silicon dioxide. This unique etching method was equipped with a Faraday cage system to control the ion-incident angles in the conventional plasma etching system. The polymeric nanohairs were fabricated with tailored leaning angles, sizes, tip shapes, and hierarchical structures. As a result of controlled leaning angle and bulged flat top of the nanohairs, the replicated, slanted nanohairs showed excellent directional adhesion, exhibiting strong shear attachment (approximately 26 N/cm(2) in maximum) in the angled direction and easy detachment (approximately 2.2 N/cm(2)) in the opposite direction, with a hysteresis value of approximately 10. In addition to single scale nanohairs, monolithic, micro-nanoscale combined hierarchical hairs were also fabricated by using a 2-step UV-assisted molding technique. These hierarchical nanoscale patterns maintained their adhesive force even on a rough surface (roughness <20 microm) because of an increase in the contact area by the enhanced height of hierarchy, whereas simple nanohairs lost their adhesion strength. To demonstrate the potential applications of the adhesive patch, the dry adhesive was used to transport a large-area glass (47.5 x 37.5 cm(2), second-generation TFT-LCD glass), which could replace the current electrostatic transport/holding system with further optimization.

A nontransferring dry adhesive with hierarchical polymer nanohairs

KAUST Repository

Jeong, H. E.

2009-03-20

We present a simple yet robust method for fabricating angled, hierarchically patterned high-aspect-ratio polymer nanohairs to generate directionally sensitive dry adhesives. The slanted polymeric nanostructures were molded from an etched polySi substrate containing slanted nanoholes. An angled etching technique was developed to fabricate slanted nanoholes with flat tips by inserting an etch-stop layer of silicon dioxide. This unique etching method was equipped with a Faraday cage system to control the ion-incident angles in the conventional plasma etching system. The polymeric nanohairs were fabricated with tailored leaning angles, sizes, tip shapes, and hierarchical structures. As a result of controlled leaning angle and bulged flat top of the nanohairs, the replicated, slanted nanohairs showed excellent directional adhesion, exhibiting strong shear attachment (approximately 26 N/cm(2) in maximum) in the angled direction and easy detachment (approximately 2.2 N/cm(2)) in the opposite direction, with a hysteresis value of approximately 10. In addition to single scale nanohairs, monolithic, micro-nanoscale combined hierarchical hairs were also fabricated by using a 2-step UV-assisted molding technique. These hierarchical nanoscale patterns maintained their adhesive force even on a rough surface (roughness <20 microm) because of an increase in the contact area by the enhanced height of hierarchy, whereas simple nanohairs lost their adhesion strength. To demonstrate the potential applications of the adhesive patch, the dry adhesive was used to transport a large-area glass (47.5 x 37.5 cm(2), second-generation TFT-LCD glass), which could replace the current electrostatic transport/holding system with further optimization.

Apparatus and method for variable angle slant hole collimator

Science.gov (United States)

Lee, Seung Joon; Kross, Brian J.; McKisson, John E.

2017-07-18

A variable angle slant hole (VASH) collimator for providing collimation of high energy photons such as gamma rays during radiological imaging of humans. The VASH collimator includes a stack of multiple collimator leaves and a means of quickly aligning each leaf to provide various projection angles. Rather than rotate the detector around the subject, the VASH collimator enables the detector to remain stationary while the projection angle of the collimator is varied for tomographic acquisition. High collimator efficiency is achieved by maintaining the leaves in accurate alignment through the various projection angles. Individual leaves include unique angled cuts to maintain a precise target collimation angle. Matching wedge blocks driven by two actuators with twin-lead screws accurately position each leaf in the stack resulting in the precise target collimation angle. A computer interface with the actuators enables precise control of the projection angle of the collimator.

T-junctions and perceived slant of partially occluded surfaces.

Science.gov (United States)

Grove, Philip M; Ono, Hiroshi; Kaneko, Hirohiko

2003-01-01

Häkkinen and Nyman (1997 Perception 26 29-38) reported that perceived slant is reduced when occlusion is a possible interpretation for the visual system. We present data from three experiments that confirm and expand on their finding. Our stimuli consisted of four types of stereograms depicting white central rectangles flanked on either side by two grey rectangles. The central white rectangles varied in height, thus manipulating the polarity of the T-junction information between the central and flanking rectangles. Perceived slant was smallest or not apparent when T-junction information indicated the central rectangles were nearer than the flanking rectangles and greatest when T-junction information indicated a farther central rectangle. Slant estimates for a stimulus containing a subjective pacmen-induced central rectangle were biased towards a depth step when an occlusion interpretation was possible.

Thermal Behaviour of Beams with Slant End-Plate Connection Subjected to Nonsymmetric Gravity Load

Directory of Open Access Journals (Sweden)

Farshad Zahmatkesh

2014-01-01

Full Text Available Research on the steel structures with confining of axial expansion in fixed beams has been quite intensive in the past decade. It is well established that the thermal behaviour has a key influence on steel structural behaviours. This paper describes mechanical behaviour of beams with bolted slant end-plate connection with nonsymmetric gravity load, subjected to temperature increase. Furthermore, the performance of slant connections of beams in steel moment frame structures in the elastic field is investigated. The proposed model proved that this flexible connection system could successfully decrease the extra thermal induced axial force by both of the friction force dissipation among two faces of slant connection and a small upward movement on the slant plane. The applicability of primary assumption is illustrated. The results from the proposed model are examined within various slant angles, thermal and friction factors. It can be concluded that higher thermal conditions are tolerable when slanting connection is used.

Comparison and limitations of three different bulk etch rate measurement methods used for gamma irradiated PM-355 detectors

Energy Technology Data Exchange (ETDEWEB)

Fazal-ur-Rehman E-mail: fazalr@kfupm.edu.sa; Abu-Jarad, F.; Al-Jarallah, M.I.; Farhat, M

2001-06-01

Samples of Nuclear Track Detectors (PM-355) were exposed to high gamma doses from 1x10{sup 5} Gy (10 Mrad) up to 1.2x10{sup 6} Gy (120 Mrad) at an incremental dose of 1x10{sup 5} Gy (10 Mrad). The gamma source was a 9.03 PBq (244 kCi) Co-60 source used for sterilization of medical syringes. The bulk etch rate (V{sub b}) was measured for various high gamma doses by three different methods: 1--thickness change method; 2--mass change method; 3--fission track diametric method. The study gives a comparison and limitations of these three methods used for bulk etch rate measurements in the detectors as a function of high gamma doses. The track etch rate (V{sub t}) and the sensitivity (V) of the detector were also measured using the fission track diametric method. It was observed that V{sub b} increases with the increase of the gamma absorbed dose at a fixed etching time in each bulk etch measuring method. The bulk etch rate decreases exponentially with the etching time at a fixed gamma absorbed dose in all three methods. The thickness change and mass change methods have successfully been applied to measure V{sub b} at higher gamma doses up to 1.2x10{sup 6} Gy (120 Mrad). The bulk etch rate determined by the mass change and thickness change methods was almost the same at a certain gamma dose and etching time whereas it was quite low in the case of the fission track diametric method due to its limitations at higher doses. Also in this method it was not possible to measure the fission fragment track diameters at higher doses due to the quick disappearance of the fission tracks and therefore the V{sub b} could not be estimated at higher gamma doses.

Self-etching ceramic primer versus hydrofluoric acid etching: Etching efficacy and bonding performance.

Science.gov (United States)

El-Damanhoury, Hatem M; Gaintantzopoulou, Maria D

2018-01-01

This study assessed the effect of pretreatment of hybrid and glass ceramics using a self-etching primer on the shear bond strength (SBS) and surface topography, in comparison to pretreatment with hydrofluoric acid and silane. 40 rectangular discs from each ceramic material (IPS e.max CAD;EM, Vita Mark II;VM, Vita Enamic;VE), were equally divided (n=10) and assigned to one of four surface pretreatment methods; etching with 4.8% hydrofluoric acid followed by Monobond plus (HFMP), Monobond etch & prime (Ivoclar Vivadent) (MEP), No treatment (NT) as negative control and Monobond plus (Ivoclar Vivadent) with no etching (MP) as positive control. SBS of resin cement (Multilink-N, Ivoclar Vivadent) to ceramic surfaces was tested following a standard protocol. Surface roughness was evaluated using an Atomic force microscope (AFM). Surface topography and elemental analysis were analyzed using SEM/EDX. Data were analyzed with two-way analysis of variance (ANOVA) and post-hoc Bonferroni test at a significance level of α=0.05. Pretreatment with HFMP resulted in higher SBS and increased surface roughness in comparison to MEP and MP. Regardless the method of surface pretreatment, the mean SBS values of EM ceramic was significantly higher (pceramics for resin-luting cementation. Copyright © 2017 Japan Prosthodontic Society. Published by Elsevier Ltd. All rights reserved.

Modification of track membranes structure by gas discharge etching method

International Nuclear Information System (INIS)

Dmitriev, S.N.; Kravets, L.I.

1996-01-01

An investigation of the properties of polyethyleneterephthalate track membranes (PET TM) treated with the plasma RF-discharge in air has been performed. The influence of the plasma treatment conditions on the basic properties of the membranes, namely pore size and pore shape, porosity and mechanical strength has been studied. It was arranged that the effect of air plasma on the PET TM results to etching a membrane's surface layer. The membranes' pore size and the form in this case change. It is shown that it is possible to change the structure of track membranes directly by the gas discharge etching method. Depending on the choice of discharge parameters, it is possible to make etching either in a part of the channel or along the whole length of the pore channels. In both cases the membranes with an asymmetric pore shape are formed which possess higher porosity and flow rate. The use of the membranes of such a type allows one to increase drastically the efficiency of the filtration processes. 12 refs., 5 figs., 1 tab

Metal-assisted chemical etch porous silicon formation method

Science.gov (United States)

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

Controlled ion track etching

Science.gov (United States)

George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

2006-03-01

It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

A long slanted transseptal accessory pathway

Directory of Open Access Journals (Sweden)

Hui-Min Wang

2011-05-01

Full Text Available A 63-year-old male with Wolff-Parkinson-White syndrome was admitted for ablation of accessory pathway. Intracardiac electrogram revealed a left-side accessory pathway during tachycardia, which was successfully ablated from the right posterior tricuspid annulus because of a long slanted transseptal accessory pathway (2.2 cm.

Etching of fused silica fiber by metallic laser-induced backside wet etching technique

Energy Technology Data Exchange (ETDEWEB)

Vass, Cs., E-mail: vasscsaba@physx.u-szeged.hu [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Kiss, B.; Kopniczky, J.; Hopp, B. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary)

2013-08-01

The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ{sub FWHM} = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm{sup 2}, while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm{sup 2}. The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

Etching of fused silica fiber by metallic laser-induced backside wet etching technique

International Nuclear Information System (INIS)

Vass, Cs.; Kiss, B.; Kopniczky, J.; Hopp, B.

2013-01-01

The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ FWHM = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm 2 , while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm 2 . The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

Light-trapping optimization in wet-etched silicon photonic crystal solar cells

Energy Technology Data Exchange (ETDEWEB)

Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

2015-07-14

We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

In vitro evaluation of microleakage around orthodontic brackets using laser etching and Acid etching methods.

Directory of Open Access Journals (Sweden)

Mohammad Hossein Toodehzaeim

2014-06-01

Full Text Available path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques.The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1, laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2, and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3. After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test.For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups.According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding.

Fabrication of a vertical sidewall using double-sided anisotropic etching of 〈1 0 0〉 oriented silicon

International Nuclear Information System (INIS)

Kim, Hyun-Seok; Bang, Yong-Seung; Song, Eun-Seok; Kim, Yong-Kweon; Kim, Jung-Mu; Ji, Chang-Hyeon

2012-01-01

A double-sided wet etch process has been proposed to fabricate vertical structures in 〈1 0 0〉 oriented silicon substrate. Both sides of a {1 0 0} silicon wafer have been patterned identically along the 〈1 1 0〉 direction, and etched using potassium hydroxide (KOH) solution. By precisly controlling the etch time, using etch-timer structure and additive control, structures with smooth and vertical {1 1 0} sidewalls have been fabricated at the edges of a rectangular opening without undercut. Rectangular through-holes, bridges and cantilevers have been constructed using the proposed process. The measured average surface roughness of the vertical sidewall was 481 nm, which has been further reduced to 217 nm and 218 nm by postetching using a KOH–IPA and TMAH–Triton mixture, respectively. Slanted {4 1 1} planes exposed at the concave corners during the vertical etch process have been successfully removed or diminished by the postetching process. A bridge structure with a high aspect ratio of 39:1 has been fabricated, and cantilevers without undercutting were successfully constructed by applying the compensation technique. The proposed process can potentially be utilized in place of the deep reactive ion etching process for the fabrication of structures having vertical through-holes, such as through-silicon vias, high aspect ratio springs and filters for microfluidic applications. (paper)

Copper-assisted, anti-reflection etching of silicon surfaces

Science.gov (United States)

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

NARCIS (Netherlands)

Abdalla, A.I.; Feilzer, A.J.

2008-01-01

Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

On site experiments of the slanted soil treatment systems for domestic gray water.

Science.gov (United States)

Itayama, Tomoaki; Kiji, Masato; Suetsugu, Aya; Tanaka, Nobuyuki; Saito, Takeshi; Iwami, Norio; Mizuochi, Motoyuki; Inamori, Yuhei

2006-01-01

In order to make a breakthrough for the acute problem of water shortage in the world, the key words "decentralization and re-use" are very important for new sustainable sanitation systems that will be developed. Therefore, we focused on a new treatments system called "a slanted soil treatment system" which combines a biotoilet system with a domestic grey water treatment system. Because this system is a low cost and compact system, the system can be easily introduced to homes in urban areas or in the suburbs of cities in many developing countries. In this study, we performed on site experiments carried out on Shikoku Island, Japan, for several years. We obtained the following results. The slanted soil treatment system could remove organic pollutants and total nitrogen and total phosphorus in grey water effectively. Furthermore, the system performance became high in the case of the high concentration of the influent water. The nitrification reaction and denitrification reaction were speculated to exist due to aerobic zones and anaerobic zones present in the slanted soil treatment system. The slanted soil treatment system could perform for approximately 3 years with zero maintenance. The plug flow model of 1st order reaction kinetics could describe the reaction in the slanted soil treatment system. However, it is necessary to improve the system to maintain the performance in all seasons.

A Twice Electrochemical-Etching Method to Fabricate Superhydrophobic-Superhydrophilic Patterns for Biomimetic Fog Harvest.

Science.gov (United States)

Yang, Xiaolong; Song, Jinlong; Liu, Junkai; Liu, Xin; Jin, Zhuji

2017-08-18

Superhydrophobic-superhydrophilic patterned surfaces have attracted more and more attention due to their great potential applications in the fog harvest process. In this work, we developed a simple and universal electrochemical-etching method to fabricate the superhydrophobic-superhydrophilic patterned surface on metal superhydrophobic substrates. The anti-electrochemical corrosion property of superhydrophobic substrates and the dependence of electrochemical etching potential on the wettability of the fabricated dimples were investigated on Al samples. Results showed that high etching potential was beneficial for efficiently producing a uniform superhydrophilic dimple. Fabrication of long-term superhydrophilic dimples on the Al superhydrophobic substrate was achieved by combining the masked electrochemical etching and boiling-water immersion methods. A long-term wedge-shaped superhydrophilic dimple array was fabricated on a superhydrophobic surface. The fog harvest test showed that the surface with a wedge-shaped pattern array had high water collection efficiency. Condensing water on the pattern was easy to converge and depart due to the internal Laplace pressure gradient of the liquid and the contact angle hysteresis contrast on the surface. The Furmidge equation was applied to explain the droplet departing mechanism and to control the departing volume. The fabrication technique and research of the fog harvest process may guide the design of new water collection devices.

Metal-assisted etch combined with regularizing etch

Energy Technology Data Exchange (ETDEWEB)

Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

2018-03-06

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

Effect of pre-etching on sealing ability of two current self-etching adhesives

Directory of Open Access Journals (Sweden)

K Khosravi

2005-05-01

Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

Plastic Limit Loads for Slanted Circumferential Through-Wall Cracked Pipes Using 3D Finite-Element Limit Analyses

International Nuclear Information System (INIS)

Jang, Hyun Min; Cho, Doo Ho; Kim, Young Jin; Huh, Nam Su; Shim, Do Jun; Choi, Young Hwan; Park, Jung Soon

2011-01-01

On the basis of detailed 3D finite-element (FE) limit analyses, the plastic limit load solutions for pipes with slanted circumferential through-wall cracks (TWCs) subjected to axial tension, global bending, and internal pressure are reported. The FE model and analysis procedure employed in the present numerical study were validated by comparing the present FE results with existing solutions for plastic limit loads of pipes with idealized TWCs. For the quantification of the effect of slanted crack on plastic limit load, slant correction factors for calculating the plastic limit loads of pipes with slanted TWCs from pipes with idealized TWCs are newly proposed from extensive 3D FE calculations. These slant-correction factors are presented in tabulated form for practical ranges of geometry and for each set of loading conditions

Acid Etching as Surface Treatment Method for Luting of Glass-Ceramic Restorations, part 1: Acids, Application Protocol and Etching Effectiveness

Directory of Open Access Journals (Sweden)

Emilija Barjaktarova-Valjakova

2018-03-01

CONCLUSION: Acid etching of the bonding surface of glass - ceramic restorations is considered as the most effective treatment method that provides a reliable bond with composite cement. Selective removing of the glassy matrix of silicate ceramics results in a micromorphological three-dimensional porous surface that allows micromechanical interlocking of the luting composite.

Binocular perception of slant about oblique axes relative to a visual frame of reference

NARCIS (Netherlands)

Ee, R. van; Erkelens, Casper J.

1995-01-01

From the literature it is known that the processing of disparity for slant is different in the presence and in the absence of a visual frame of reference. We elaborate the experimental finding that vertical disparity is not processed for slant perception in the presence of a visual reference. This

Prediction of slant path rain attenuation statistics at various locations

Science.gov (United States)

Goldhirsh, J.

1977-01-01

The paper describes a method for predicting slant path attenuation statistics at arbitrary locations for variable frequencies and path elevation angles. The method involves the use of median reflectivity factor-height profiles measured with radar as well as the use of long-term point rain rate data and assumed or measured drop size distributions. The attenuation coefficient due to cloud liquid water in the presence of rain is also considered. Absolute probability fade distributions are compared for eight cases: Maryland (15 GHz), Texas (30 GHz), Slough, England (19 and 37 GHz), Fayetteville, North Carolina (13 and 18 GHz), and Cambridge, Massachusetts (13 and 18 GHz).

Observation of slant column NO2 using the super-zoom mode of AURA-OMI

NARCIS (Netherlands)

Valin, L.C.; Russell, A.R.; Bucsela, E.J.; Veefkind, J.P.; Cohen, R.C.

2011-01-01

We retrieve slant column NO2 from the superzoom mode of the Ozone Monitoring Instrument (OMI) to explore its utility for understanding NOx emissions and variability. Slant column NO2 is operationally retrieved from OMI (Boersma et al., 2007; Bucsela et al., 2006) with a nadir footprint of 13×24 km2,

Steady-state, elastic-plastic growth of slanted cracks in symmetrically loaded plates

DEFF Research Database (Denmark)

Nielsen, Kim Lau; Hutchinson, J. W.

2017-01-01

parameter through the plate in the plastic zone at the crack tip. The distribution of the mode I and mode III stress intensity factors along the crack front are obtained for the elastic problem. The out-of-plane bending constraint imposed on the plate significantly influences the mixed mode behavior along......Elastic and elastic-plastic results are obtained for a semi-infinite slanted through-crack propagating in a symmetrically loaded plate strip with the aim of providing theoretical background to commonly observed plate tearing behavior. Were it is not for the slant of the crack through the thickness...... of the plate, the problem would be mode I, but due to the slant the local conditions along the crack front are a combination of mode I and mode III. A three-dimensional formulation for steady-state crack propagation is employed to generate distributions of effective stress, stress triaxiality and Lode...

Opposed slant tube diabatic sorber

Science.gov (United States)

Erickson, Donald C.

2004-01-20

A sorber comprised of at least three concentric coils of tubing contained in a shell with a flow path for liquid sorbent in one direction, a flow path for heat transfer fluid which is in counter-current heat exchange relationship with sorbent flow, a sorbate vapor port in communication with at least one of sorbent inlet or exit ports, wherein each coil is coiled in opposite direction to those coils adjoining it, whereby the opposed slant tube configuration is achieved, with structure for flow modification in the core space inside the innermost coil.

Two methods to simulate intrapulpal pressure: effects upon bonding performance of self-etch adhesives.

Science.gov (United States)

Feitosa, V P; Gotti, V B; Grohmann, C V; Abuná, G; Correr-Sobrinho, L; Sinhoreti, M A C; Correr, A B

2014-09-01

To evaluate the effects of two methods to simulate physiological pulpal pressure on the dentine bonding performance of two all-in-one adhesives and a two-step self-etch silorane-based adhesive by means of microtensile bond strength (μTBS) and nanoleakage surveys. The self-etch adhesives [G-Bond Plus (GB), Adper Easy Bond (EB) and silorane adhesive (SIL)] were applied to flat deep dentine surfaces from extracted human molars. The restorations were constructed using resin composites Filtek Silorane or Filtek Z350 (3M ESPE). After 24 h using the two methods of simulated pulpal pressure or no pulpal pressure (control groups), the bonded teeth were cut into specimens and submitted to μTBS and silver uptake examination. Results were analysed with two-way anova and Tukey's test (P adhesives. No difference between control and pulpal pressure groups was found for SIL and GB. EB led significant drop (P = 0.002) in bond strength under pulpal pressure. Silver impregnation was increased after both methods of simulated pulpal pressure for all adhesives, and it was similar between the simulated pulpal pressure methods. The innovative method to simulate pulpal pressure behaved similarly to the classic one and could be used as an alternative. The HEMA-free one-step and the two-step self-etch adhesives had acceptable resistance against pulpal pressure, unlike the HEMA-rich adhesive. © 2013 International Endodontic Journal. Published by John Wiley & Sons Ltd.

Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

Science.gov (United States)

Ozer, Fusun; Blatz, Markus B

2013-01-01

Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

Method for making a single-step etch mask for 3D monolithic nanostructures

International Nuclear Information System (INIS)

Grishina, D A; Harteveld, C A M; Vos, W L; Woldering, L A

2015-01-01

Current nanostructure fabrication by etching is usually limited to planar structures as they are defined by a planar mask. The realization of three-dimensional (3D) nanostructures by etching requires technologies beyond planar masks. We present a method for fabricating a 3D mask that allows one to etch three-dimensional monolithic nanostructures using only CMOS-compatible processes. The mask is written in a hard-mask layer that is deposited on two adjacent inclined surfaces of a Si wafer. By projecting in a single step two different 2D patterns within one 3D mask on the two inclined surfaces, the mutual alignment between the patterns is ensured. Thereby after the mask pattern is defined, the etching of deep pores in two oblique directions yields a three-dimensional structure in Si. As a proof of concept we demonstrate 3D mask fabrication for three-dimensional diamond-like photonic band gap crystals in silicon. The fabricated crystals reveal a broad stop gap in optical reflectivity measurements. We propose how 3D nanostructures with five different Bravais lattices can be realized, namely cubic, tetragonal, orthorhombic, monoclinic and hexagonal, and demonstrate a mask for a 3D hexagonal crystal. We also demonstrate the mask for a diamond-structure crystal with a 3D array of cavities. In general, the 2D patterns on the different surfaces can be completely independently structured and still be in perfect mutual alignment. Indeed, we observe an alignment accuracy of better than 3.0 nm between the 2D mask patterns on the inclined surfaces, which permits one to etch well-defined monolithic 3D nanostructures. (paper)

Do Individual Differences and Aging Effects in the Estimation of Geographical Slant Reflect Cognitive or Perceptual Effects?

Directory of Open Access Journals (Sweden)

Abigail M. Dean

2016-07-01

Full Text Available Several individual differences including age have been suggested to affect the perception of slant. A cross-sectional study of outdoor hill estimation (N = 106 was analyzed using individual difference measures of age, experiential knowledge, fitness, personality traits, and sex. Of particular note, it was found that for participants who reported any experiential knowledge about slant, estimates decreased (i.e., became more accurate as conscientiousness increased, suggesting that more conscientious individuals were more deliberate about taking their experiential knowledge (rather than perception into account. Effects of fitness were limited to those without experiential knowledge, suggesting that they, too, may be cognitive rather than perceptual. The observed effects of age, which tended to produce lower, more accurate estimates of hill slant, provide more evidence that older adults do not see hills as steeper. The main effect of age was to lower slant estimates; such effects may be due to implicit experiential knowledge acquired over a lifetime. The results indicate the impact of cognitive, rather than perceptual factors on individual differences in slant estimation.

Retroflection from slanted coastlines-circumventing the "vorticity paradox"

Directory of Open Access Journals (Sweden)

V. Zharkov

2008-12-01

Full Text Available The balance of long-shore momentum flux requires that the solution of zonally retroflecting currents involve ring shedding on the western side. An important aspect of the ring dynamics is the ring intensity α (analogous to the Rossby number, which reaches its maximum value of unity when the upstream potential vorticity (PV is zero. Friction leads to a slow-down and a decrease in α. The main difficulty is that the solution of the system of equations for conservation of mass and momentum of zonal currents leads to the conclusion that the ratio (Φ of the mass flux going into the rings and the total incoming mass flux is approximately 4α/(1+2α. This yields the "vorticity paradox" – only relatively weak rings (α≤1/2 could satisfy the necessary condition Φ≤1. Physically, this means, for example, that the momentum-flux of zero PV currents upstream is so high that, no matter how many rings are produced and, no matter what size they are, they cannot compensate for it.

To avoid this paradox, we develop a nonlinear analytical model of retroflection from a slanted non-zonal coastline. We show that when the slant of coastline (γ exceeds merely 15⁰, Φ does not reach unity regardless of the value of α. Namely, the paradox disappears even for small slants. Our slowly varying nonlinear solution does not only let us circumvent the paradox. It also gives a detailed description of the rings growth rate and the mass flux going into the rings as a function of time. For example, in the case of zero PV and zero thickness of the upper layer along the coastline, the maximal values of Φ can be approximately expressed as, 1.012+0.32exp(−γ/3.41−γ/225. Interestingly, for significant slants γ≥30⁰, the rings reach a terminal size corresponding to a balance between the β-force and both the upstream and downstream momentum fluxes. This terminal size is unrelated to the ultimate

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

International Nuclear Information System (INIS)

Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

2001-01-01

To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

Atomic force microscopy of histological sections using a chemical etching method

International Nuclear Information System (INIS)

Tiribilli, B.; Bani, D.; Quercioli, F.; Ghirelli, A.; Vassalli, M.

2005-01-01

Physiology and pathology have a big deal on tissue morphology, and the intrinsic spatial resolution of an atomic force microscope (AFM) is able to observe ultrastructural details. In order to investigate cellular and subcellular structures in histological sections with the AFM, we used a new simple method for sample preparation, i.e. chemical etching of semithin sections from epoxy resin-embedded specimens: such treatment appears to melt the upper layers of the embedding resin; thus, removing the superficial roughness caused by the edge of the microtome knife and bringing into high relief the biological structures hidden in the bulk. Consecutive ultrathin sections embedded in epoxy resin were observed with a transmission electron microscope (TEM) to compare the different imaging properties on the same specimen sample. In this paper we report, as an example, our AFM and TEM images of two different tissue specimens, rat pancreas and skeletal muscle fibres, showing that most of the inner details are visible with the AFM. These results suggest that chemical etching of histological sections may be a simple, fast and cost-effective method for AFM imaging with ultrastructural resolution

Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

Science.gov (United States)

Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

2016-01-01

Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (pbracket bonding after enamel conditioning with any of the SEPs tested. The SEPs used in Groups C (Xeno V

Accurate acoustic and elastic beam migration without slant stack for complex topography

International Nuclear Information System (INIS)

Huang, Jianping; Yuan, Maolin; Li, Zhenchun; Liao, Wenyuan; Yue, Yubo

2015-01-01

Recent trends in seismic exploration have led to the collection of more surveys, often with multi-component recording, in onshore settings where both topography and subsurface targets are complex, leading to challenges for processing methods. Gaussian beam migration (GBM) is an alternative to single-arrival Kirchhoff migration, although there are some issues resulting in unsatisfactory GBM images. For example, static correction will give rise to the distortion of wavefields when near-surface elevation and velocity vary rapidly. Moreover, Green’s function compensated for phase changes from the beam center to receivers is inaccurate when receivers are not placed within some neighborhood of the beam center, that is, GBM is slightly inflexible for irregular acquisition system and complex topography. As a result, the differences of both the near-surface velocity and the surface slope from the beam center to the receivers and the poor spatial sampling of the land data lead to inaccuracy and aliasing of the slant stack, respectively. In order to improve the flexibility and accuracy of GBM, we propose accurate acoustic, PP and polarity-corrected PS beam migration without slant stack for complex topography. The applications of this method to one-component synthetic data from a 2D Canadian Foothills model and a Zhongyuan oilfield fault model, one-component field data and an unseparated multi-component synthetic data demonstrate that the method is effective for structural and relatively amplitude-preserved imaging, but significantly more time-consuming. (paper)

Etch bias inversion during EUV mask ARC etch

Science.gov (United States)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Fabrication of micromechanical structures on substrates selectively etched using a micropatterned ion-implantation method

International Nuclear Information System (INIS)

Nakano, Shizuka; Nakagawa, Sachiko; Ishikawa, Haruo; Ogiso, Hisato

2001-01-01

An advanced micromachining technique using ion implantation to modify materials was studied. Gold ion implantation into silicon decreased the etching rate when the silicon was etched in potassium hydroxide solution after the ion implantation; the implanted region remained, thus forming the microstructure. Observation of the cross-section of the resulting etched structure by transmission electron microscopy showed that the structure was made only from the ion-implanted region, and that gold was precipitated on the surface. To clarify the mechanism involved in the decrease in the etching rate, we varied the etching conditions. Our results show that precipitation of implanted gold on the surface decreased the etching rate, because solubility of gold is lower

Experimental investigation of piercing of high-strength steels within a critical range of slant angle

Science.gov (United States)

Senn, S.; Liewald, M.

2017-09-01

Deep drawn parts often do have complex designs and, therefore, must be trimmed or punched subsequently in a second stage. Due to the complex part geometry, most punching areas do reveal critical slant angle (angle between part surface and ram movement direction) different to perpendicular direction. Piercing within a critical range of slant angle may lead to severe damage of the cutting tool. Consequently, expensive cam units are required to transform the ram moving direction in order to perform the piercing process perpendicularly to the local part surface. For modern sheet metals, however, the described critical angle of attack has not been investigated adequately until now. Therefore, cam units are used in cases in which regular piercing with high slant angle wouldn’t be possible. Purpose of this study is to investigate influencing factors and their effect on punch damage during piercing of high strength steels with slant angles. Therefore, a modular shearing tool was designed, which allows to simply switch die parts to vary cutting clearance and cutting angle. The target size of the study is to measure the lateral deviation of the punch which is monitored by an eddy current sensor. The sensor is located in the downholder and measures the lateral punch deviation in-line during manufacturing. The deviation is mainly influenced by slant angle of workpiece surface. In relation to slang angle and sheet thickness the clearance has a small influence on the measured punch deflection.

A quick method for maintaining the molarity of NaOH solution during continuous etching of CR-39

International Nuclear Information System (INIS)

Khan, E.U.; Husaini, S.N.; Malik, F.; Sajid, M.; Karim, S.; Qureshi, I.E.

2002-01-01

A series of experiments have been performed to investigate the physio-chemical changes that occurred in the 6 M NaOH solution after etching CR-39 (Pershore and Homalite) detectors, each for 3, 6, 9, 12 and 15 h. Various physical parameters like concentration, electrical conductivity (EC) and density of the solutions have been measured after each etching interval. Results have been discussed in the light of stoichiometrical equation for the interaction of CR-39 with NaOH. It is found that the concentration, EC and the density of the solution, in which CR-39 has been etched, increase linearly with respect to the etching time. The inter-relationship of EC-concentration and density-concentration suggest that the concentration of the etchant can be maintained at certain desired value by adjusting the corresponding value of EC or density, measured through non-destructive and quick methods

Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

Directory of Open Access Journals (Sweden)

Shiva Alavi

2014-01-01

Full Text Available Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under Χ10 magnification and adhesive remnant index (ARI score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa (P = 0.41. There was no significant difference in the ARI scores between two groups (P = 0.08. However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching.

The comparative analysis of rocks' resistance to forward-slanting disc cutters and traditionally installed disc cutters

Science.gov (United States)

Zhang, Zhao-Huang; Fei, Sun; Liang, Meng

2016-08-01

At present, disc cutters of a full face rock tunnel boring machine are mostly mounted in the traditional way. Practical use in engineering projects reveals that this installation method not only heavily affects the operation life of disc cutters, but also increases the energy consumption of a full face rock tunnel boring machine. To straighten out this issue, therefore, a rock-breaking model is developed for disc cutters' movement after the research on the rock breaking of forward-slanting disc cutters. Equations of its displacement are established based on the analysis of velocity vector of a disc cutter's rock-breaking point. The functional relations then are brought forward between the displacement parameters of a rock-breaking point and its coordinate through the analysis of micro displacement of a rock-breaking point. Thus, the geometric equations of rock deformation are derived for the forward-slanting installation of disc cutters. With a linear relationship remaining between the acting force and its deformation either before or after the leap breaking, the constitutive relation of rock deformation can be expressed in the form of generalized Hooke law, hence the comparative analysis of the variation in the resistance of rock to the disc cutters mounted in the forward-slanting way with that in the traditional way. It is discovered that with the same penetration, strain of the rock in contact with forward-slanting disc cutters is apparently on the decline, in other words, the resistance of rock to disc cutters is reduced. Thus wear of disc cutters resulted from friction is lowered and energy consumption is correspondingly decreased. It will be useful for the development of installation and design theory of disc cutters, and significant for the breakthrough in the design of full face rock tunnel boring machine.

The Need of Slanted Side Holes for Venous Cannulae

Directory of Open Access Journals (Sweden)

Joong Yull Park

2012-01-01

Full Text Available Well-designed cannulae must allow good flow rate and minimize nonphysiologic load. Venous cannulae generally have side holes to prevent the rupture of blood vessel during perfusion. Optimizing side hole angle will yield more efficient and safe venous cannulae. A numerical modeling was used to study the effect of the angle (0°–45° and number (0–12 of side holes on the performance of cannulae. By only slanting the side holes, it increases the flow rate up to 6% (in our models. In addition, it was found that increasing the number of side holes reduces the shear rate up to 12% (in our models. A new parameter called “penetration depth” was introduced to describe the interfering effect of stream jets from side holes, and the result showed that the 45°-slanted side holes caused minimum interfering for the flow in cannula. Our quantitative hemodynamic analysis study provides important guidelines for venous cannulae design.

Field gradient calculation of HTS double-pancake coils considering the slanted turns and the splice

Energy Technology Data Exchange (ETDEWEB)

Baek, Geon Woo; Kim, Jin Sub; Song, Seung Hyun; Ko, Tae Kuk [Yonsei University, Seoul (Korea, Republic of); Lee, Woo Seung [JH ENGINEERING CO., LTD., Gunpo (Korea, Republic of); Lee, On You [Korea National University of Transportation, Chungju (Korea, Republic of)

2017-03-15

To obtain Nuclear Magnetic Resonance (NMR) measurement of membrane protein, an NMR magnet is required to generate high intensity, homogeneity, and stability of field. A High-Temperature Superconducting (HTS) magnet is a promising alternative to a conventional Low-Temperature Superconducting (LTS) NMR magnet for high field, current density, and stability margin. Conventionally, an HTS coil has been wound by several winding techniques such as Single-Pancake (SP), Double-Pancake (DP), and layer-wound. The DP winding technique has been frequently used for a large magnet because long HTS wire is generally difficult to manufacture, and maintenance of magnet is convenient. However, magnetic field generated by the slanted turns and the splice leads to field inhomogeneity in Diameter of Spherical Volume (DSV). The field inhomogeneity degrades performance of NMR spectrometer and thus effect of the slanted turns and the splice should be analyzed. In this paper, field gradient of HTS double-pancake coils considering the slanted turns and the splice was calculated using Biot-Savart law and numerical integration. The calculation results showed that magnetic field produced by the slanted turns and the splice caused significant inhomogeneity of field.

Level Set Approach to Anisotropic Wet Etching of Silicon

Directory of Open Access Journals (Sweden)

Branislav Radjenović

2010-05-01

Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

Determination of total fluoride in HF/HNO3/H2SiF6 etch solutions by new potentiometric titration methods.

Science.gov (United States)

Weinreich, Wenke; Acker, Jörg; Gräber, Iris

2007-03-30

In the photovoltaic industry the etching of silicon in HF/HNO(3) solutions is a decisive process for cleaning wafer surfaces or to produce certain surface morphologies like polishing or texturization. With regard to cost efficiency, a maximal utilisation of etch baths in combination with highest quality and accuracy is strived. To provide an etch bath control realised by a replenishment with concentrated acids the main constituents of these HF/HNO(3) etch solutions including the reaction product H(2)SiF(6) have to be analysed. Two new methods for the determination of the total fluoride content in an acidic etch solution based on the precipitation titration with La(NO(3))(3) are presented within this paper. The first method bases on the proper choice of the reaction conditions, since free fluoride ions have to be liberated from HF and H(2)SiF(6) at the same time to be detected by a fluoride ion-selective electrode (F-ISE). Therefore, the sample is adjusted to a pH of 8 for total cleavage of the SiF(6)(2-) anion and titrated in absence of buffers. In a second method, the titration with La(NO(3))(3) is followed by a change of the pH-value using a HF resistant glass-electrode. Both methods provide consistent values, whereas the analysis is fast and accurate, and thus, applicable for industrial process control.

All-solid-state thin film battery based on well-aligned slanted LiCoO{sub 2} nanowires fabricated by glancing angle deposition

Energy Technology Data Exchange (ETDEWEB)

Yoon, Miyoung [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Seunghwan [High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Daehee [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Joosun, E-mail: joosun@kist.re.kr [High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Moon, Jooho, E-mail: jmoon@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

2017-08-01

Graphical abstract: We successfully fabricated well-aligned slanted LiCoO{sub 2} nanowires as a one-dimensional nanostructured cathode by glancing angle deposition to enhance the electrochemical performance of all-solid-state thin film batteries. - Highlights: • Well-aligned slanted LiCoO{sub 2} nanowires are fabricated by glancing angle deposition. • One-dimensional nanostructured LiCoO{sub 2} cathode enlarges the contact area. • All-solid-state thin film battery exhibits enhances rate capability and cycling stability. - Abstract: We fabricated all-solid-state thin film batteries based on well-aligned slanted LiCoO{sub 2} nanowires by glancing angle deposition, as a facile template-free method in order to increase the electrochemically active site, i.e., the contact area between the solid electrolyte and the electrode. A highly porous thin film composed of well-separated slanted LiCoO{sub 2} nanowires not only facilitates the penetration of solid electrolyte phase into the cathode, but also alleviates the thermally and mechanically induced stresses during post-annealing and electrochemical cycling. The all-solid-state thin film battery based on the well-aligned slanted LiCoO{sub 2} nanowires, whose contact area between electrolyte and electrode was three times as high as that of a dense thin film, could provide additional migration pathways for lithium ion diffusion due to the enlarged reaction sites. This resulted in enhanced electrochemical kinetics, thereby leading to better rate capability and long-term cyclic stability as compared to the dense LiCoO{sub 2} thin film.

Design, data, and theory regarding a digital hand inclinometer: a portable device for studying slant perception.

Science.gov (United States)

Li, Zhi; Durgin, Frank H

2011-06-01

Palm boards are often used as a nonverbal measure in human slant perception studies. It was recently found that palm boards are biased and relatively insensitive measures, and that an unrestricted hand gesture provides a more sensitive response (Durgin, Hajnal, Li, Tonge, & Stigliani, Acta Psychologica, 134, 182-197, 2010a). In this article, we describe an original design for a portable lightweight digital device for measuring hand orientation. This device is microcontroller-based and uses a micro inclinometer chip as its inclination sensor. The parts are fairly inexpensive. This device, used to measure hand orientation, provides a sensitive nonverbal method for studying slant perception, which can be used in both indoor and outdoor environments. We present data comparing the use of a free hand to palm-board and verbal measures for surfaces within reach and explain how to interpret free-hand measures for outdoor hills.

Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

Science.gov (United States)

Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

2016-01-01

The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

Optical and structural properties of porous zinc oxide fabricated via electrochemical etching method

International Nuclear Information System (INIS)

Ching, C.G.; Lee, S.C.; Ooi, P.K.; Ng, S.S.; Hassan, Z.; Hassan, H. Abu; Abdullah, M.J.

2013-01-01

Highlights: • Hillock like porous structure zinc oxide was obtained via electrochemical etching. • Anisotropic dominance etching process by KOH etchant. • Reststrahlen features are sensitive to multilayer porous structure. • Determination of porosity from IR reflectance spectrum. -- Abstract: We investigated the optical and structural properties of porous zinc oxide (ZnO) thin film fabricated by ultraviolet light-assisted electrochemical etching. This fabrication process used 10 wt% potassium hydroxide solution as an electrolyte. Hillock-like porous ZnO films were successfully fabricated according to the field emission scanning electron microscopy results. The cross-sectional study of the sample indicated that anisotropic-dominated etching process occurred. However, the atomic force microscopic results showed an increase in surface roughness of the sample after electrochemical etching. A resonance hump induced by the porous structure was observed in the infrared reflectance spectrum. Using theoretical modeling technique, ZnO porosification was verified, and the porosity of the sample was determined

Selective laser etching or ablation for fabrication of devices

KAUST Repository

Buttner, Ulrich; Salama, Khaled N.; Sapsanis, Christos

2017-01-01

Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can

Efficient alpha particle detection by CR-39 applying 50 Hz-HV electrochemical etching method

International Nuclear Information System (INIS)

Sohrabi, M.; Soltani, Z.

2016-01-01

Alpha particles can be detected by CR-39 by applying either chemical etching (CE), electrochemical etching (ECE), or combined pre-etching and ECE usually through a multi-step HF-HV ECE process at temperatures much higher than room temperature. By applying pre-etching, characteristics responses of fast-neutron-induced recoil tracks in CR-39 by HF-HV ECE versus KOH normality (N) have shown two high-sensitivity peaks around 5–6 and 15–16 N and a large-diameter peak with a minimum sensitivity around 10–11 N at 25°C. On the other hand, 50 Hz-HV ECE method recently advanced in our laboratory detects alpha particles with high efficiency and broad registration energy range with small ECE tracks in polycarbonate (PC) detectors. By taking advantage of the CR-39 sensitivity to alpha particles, efficacy of 50 Hz-HV ECE method and CR-39 exotic responses under different KOH normalities, detection characteristics of 0.8 MeV alpha particle tracks were studied in 500 μm CR-39 for different fluences, ECE duration and KOH normality. Alpha registration efficiency increased as ECE duration increased to 90 ± 2% after 6–8 h beyond which plateaus are reached. Alpha track density versus fluence is linear up to 10 6  tracks cm −2 . The efficiency and mean track diameter versus alpha fluence up to 10 6  alphas cm −2 decrease as the fluence increases. Background track density and minimum detection limit are linear functions of ECE duration and increase as normality increases. The CR-39 processed for the first time in this study by 50 Hz-HV ECE method proved to provide a simple, efficient and practical alpha detection method at room temperature. - Highlights: • Alpha particles of 0.8 MeV were detected in CR-39 by 50 Hz-HV ECE method. • Efficiency/track diameter was studied vs fluence and time for 3 KOH normality. • Background track density and minimum detection limit vs duration were studied. • A new simple, efficient and low-cost alpha detection method

Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Energy Technology Data Exchange (ETDEWEB)

Saitoh, Kazunari; Takahashi, Yoshihiro; Ohnishi, Kazunori [Nihon Univ., Tokyo (Japan). Coll. of Science and Technology; Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu

1997-03-01

In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching(SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition,etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000?C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.

1992-01-01

This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

International Nuclear Information System (INIS)

Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

2009-01-01

This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

Asymmetric valley-resolved beam splitting and incident modes in slanted graphene junctions

International Nuclear Information System (INIS)

Hsieh, S. H.; Chu, C. S.

2016-01-01

Electron injection into a graphene sheet through a slanted armchair graphene nanoribbon (AGNR) is investigated. An incident mode, or subband, in the AGNR is valley-unpolarized. Our attention is on the valley-resolved nature of the injected electron beams and its connection to the incident mode. It is known for a normal injection that an incident mode will split symmetrically into two valley-resolved beams of equal intensity. We show, in contrast, that slanted injections result in asymmetric valley-resolved beam splitting. The most asymmetric beam splitting cases, when one of the valley-resolved beams has basically disappeared, are found and the condition derived. This is shown not due to trigonal warping because it holds even in the low incident energy regime, as long as collimation allows. These most asymmetric beam splitting cases occur at energies within an energy interval near and include the subband edge of an incident mode. The physical picture is best illustrated by a projection of the slanted AGNR subband states onto that of the 2D graphene sheet. It follows that the disappearing of a valley-resolved beam coincides with the situation that the group velocities of the projected states in the corresponding valley are in backward directions

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Directory of Open Access Journals (Sweden)

Kun-Dar Li

2018-02-01

Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Science.gov (United States)

Li, Kun-Dar; Miao, Jin-Ru

2018-02-01

To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Observation of slant column NO2 using the super-zoom mode of AURA-OMI

Directory of Open Access Journals (Sweden)

R. C. Cohen

2011-09-01

Full Text Available We retrieve slant column NO2 from the super-zoom mode of the Ozone Monitoring Instrument (OMI to explore its utility for understanding NOx emissions and variability. Slant column NO2 is operationally retrieved from OMI (Boersma et al., 2007; Bucsela et al., 2006 with a nadir footprint of 13 × 24 km2, the result of averaging eight detector elements on board the instrument. For 85 orbits in late 2004, OMI reported observations from individual "super-zoom" detector elements (spaced at 13 × 3 km2 at nadir. We assess the spatial response of these individual detector elements in-flight and determine an upper-bound on spatial resolution of 9 km, in good agreement with on-ground calibration (7 km FWHM. We determine the precision of the super-zoom mode to be 2.1 × 1015 molecules cm−2, approximately a factor of √8 lower than an identical retrieval at operational scale as expected if random noise dominates the uncertainty. We retrieve slant column NO2 over the Satpura power plant in India; Seoul, South Korea; Dubai, United Arab Emirates; and a set of large point sources on the Rihand Reservoir in India using differential optical absorption spectroscopy (DOAS. Over these sources, the super-zoom mode of OMI observes variation in slant column NO2 of up to 30 × the instrumental precision within one operational footprint.

Method to improve the evaluation of a combination track-etch dosimeter/spectrometer

International Nuclear Information System (INIS)

Brackenbush, L.W.; Parkhurst, M.A.; Hadlock, D.E.; Faust, L.G.

1983-09-01

A paper is summarized which describes a method of determining the neutron energy spectrum through spectrum unfolding techniques to more accurately assess the dose equivalent from track-etch dosimeters. A mathematical technique is described which can be used in conjunction with the neutron detectors to more accurately estimate neutron dose equivalent. The technique is based upon solutions to a system of Fredholm integral equations of the first type

Comparative study of resist stabilization techniques for metal etch processing

Science.gov (United States)

Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

1999-06-01

This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

Self-etching adhesive on intact enamel, with and without pre-etching.

Science.gov (United States)

Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

2012-05-01

Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

KAUST Repository

Najar, Adel

2012-01-01

We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

Dry etching technology for semiconductors

CERN Document Server

Nojiri, Kazuo

2015-01-01

This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

Etching radical controlled gas chopped deep reactive ion etching

Science.gov (United States)

Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

2013-10-01

A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

Science.gov (United States)

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

Science.gov (United States)

Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

2015-01-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (padhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was dependent on the adhesive material and tooth substrate and should be carefully considered in clinical situations.

Direct Evidence for the Economy of Action: Glucose and the Perception of Geographical Slant

Science.gov (United States)

Schnall, Simone; Zadra, Jonathan R.; Proffitt, Dennis R.

2012-01-01

When locomoting in a physically challenging environment, the body draws upon available energy reserves to accommodate increased metabolic demand. Ingested glucose supplements the body’s energy resources, whereas non-caloric sweetener does not. Two experiments demonstrate that participants who had consumed a glucose-containing drink perceived a hills slant to be less steep than did participants who had consumed a drink containing non-caloric sweetener. The glucose manipulation influenced participants’ explicit awareness of hill slant but, as predicted, it did not affect a visually-guided action of orienting a tilting palmboard to be parallel to the hill. Measured individual differences in factors related to bioenergetic state such as fatigue, sleep quality, fitness, mood, and stress also affected perception such that lower energetic states were associated with steeper perceptions of hill slant. This research shows that the perception of the environment’s spatial layout is influenced by the energetic resources available for locomotion within it. Our findings are consistent with the view that spatial perceptions are influenced by bioenergetic factors. PMID:20514996

Influence of application methods of one-step self-etching adhesives on microtensile bond strength

OpenAIRE

Chul-Kyu Choi,; Sung-Ae Son; Jin-Hee Ha; Bock Hur; Hyeon-Cheol Kim; Yong-Hun Kwon; Jeong-Kil Park

2011-01-01

Objectives The purpose of this study was to evaluate the effect of various application methods of one-step self-etch adhesives to microtensile resin-dentin bond strength. Materials and Methods Thirty-six extracted human molars were used. The teeth were assigned randomly to twelve groups (n = 15), according to the three different adhesive systems (Clearfil Tri-S Bond, Adper Prompt L-Pop, G-Bond) and application methods. The adhesive systems were applied on the dentin as follows: 1) T...

Fabrication and characterization of a slanting-type solar water ...

African Journals Online (AJOL)

The system includes four major components; a wooden basin of surface area 0.16 m2, an absorber surface, a slanting glass roof and a condensate channel. Very cheap locally available materials were used to fabricate the solar still. The solar still produced an average of 0.09 m3 of distilled water per day, and this study was ...

Geometric Calibration and Image Reconstruction for a Segmented Slant-Hole Stationary Cardiac SPECT System.

Science.gov (United States)

Mao, Yanfei; Yu, Zhicong; Zeng, Gengsheng L

2015-06-01

A dedicated stationary cardiac single-photon emission computed tomography (SPECT) system with a novel segmented slant-hole collimator has been developed. The goal of this paper is to calibrate this new imaging geometry with a point source. Unlike the commercially available dedicated cardiac SPECT systems, which are specialized and can be used only to image the heart, our proposed cardiac system is based on a conventional SPECT system but with a segmented slant-hole collimator replacing the collimator. For a dual-head SPECT system, 2 segmented collimators, each with 7 sections, are arranged in an L-shaped configuration such that they can produce a complete cardiac SPECT image with only one gantry position. A calibration method was developed to estimate the geometric parameters of each collimator section as well as the detector rotation radius, under the assumption that the point source location is calculated using the central-section data. With a point source located off the rotation axis, geometric parameters for each collimator section can be estimated independently. The parameters estimated individually are further improved by a joint objective function that uses all collimator sections simultaneously and incorporates the collimator symmetry information. Estimation results and images reconstructed from estimated parameters are presented for both simulated and real data acquired from a prototype collimator. The calibration accuracy was validated by computer simulations with an error of about 0.1° for the slant angles and about 1 mm for the rotation radius. Reconstructions of a heart-insert phantom did not show any image artifacts of inaccurate geometric parameters. Compared with the detector's intrinsic resolution, the estimation error is small and can be ignored. Therefore, the accuracy of the calibration is sufficient for cardiac SPECT imaging. © 2015 by the Society of Nuclear Medicine and Molecular Imaging, Inc.

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

International Nuclear Information System (INIS)

Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude

2009-01-01

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. (semiconductor materials)

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

Energy Technology Data Exchange (ETDEWEB)

Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude, E-mail: xfchen@semi.ac.c, E-mail: nfchen@semi.ac.c [Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2009-08-15

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. (semiconductor materials)

Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

Science.gov (United States)

Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

2012-05-01

A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Etching of enamel for direct bonding with a thulium fiber laser

Science.gov (United States)

Kabaş Sarp, Ayşe S.; Gülsoy, Murat

2011-03-01

Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

NARCIS (Netherlands)

Sokolovskij, R.; Sun, J.; Santagata, F.; Iervolino, E.; Li, S.; Zhang, G.Y.; Sarro, P.M.; Zhang, G.Q.

2016-01-01

A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O₂ plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported

Bond efficacy and interface morphology of self-etching adhesives to ground enamel

NARCIS (Netherlands)

Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

2010-01-01

Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-04-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

Wet chemical etching of Al-doped ZnO film deposited by RF magnetron sputtering method on textured glass substrate for energy application

Energy Technology Data Exchange (ETDEWEB)

Hwang, Ki Hwan; Nam, Sang Hun; Jung, Won Suk; Lee, Yong Min; Yang, Hee Su; Boo, Jin Hyo [Dept. of Chemistry, Sungkyunkwan University, Suwon (Korea, Republic of)

2015-03-15

The etching of glasses in aqueous hydrofluoric acid (HF) solutions is applied in many technological fields. Particularly, the textured transparent conductive oxide materials on the glass substrate etched by HF were used to improve the current density of solar cells. In this study, the textured glass substrate has been etched by solution and the Al-doped ZnO (AZO) thin films have been prepared on this textured glass substrates by RF magnetron sputtering method. After the AZO film deposition, the surface of AZO has been etched by hydrochloric acid with different concentration and etching time. Etched AZO thin films had higher haze ratio and sheet resistance than bare AZO glass. Increases in the root-mean-square surface roughness of AZO films enhanced from 53.78 to 84.46 nm the haze ratio in above 700 nm wavelength. Our process could be applicable in texturing glass and etching AZO surface to fabricate solar cell in industrial scale. We also carried out fabricating an organic solar-cell device. Energy conversion efficiency improvement of 123% was obtained with textured AZO-based solar-cell device compared with that of nontextured solar-cell device.

Photonic jet μ-etching: from static to dynamic process

Science.gov (United States)

Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

2017-05-01

Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

Simple method to transfer graphene from metallic catalytic substrates to flexible surfaces without chemical etching

International Nuclear Information System (INIS)

Ko, P J; Takahashi, H; Sakai, H; Thu, T V; Okada, H; Sandhu, A; Koide, S

2013-01-01

Graphene shows promise for applications in flexible electronics. Here, we describe our procedure to transfer graphene grown on copper substrates by chemical vapor deposition to polydimethylsiloxane (PDMS) and SiO 2 /Si surfaces. The transfer of graphene was achieved by a simple, etching-free method onto flexible PDMS substrates.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

Energy Technology Data Exchange (ETDEWEB)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

2015-03-16

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

International Nuclear Information System (INIS)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

2015-01-01

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

International Nuclear Information System (INIS)

Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

2008-01-01

Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

Modelling unidirectional liquid spreading on slanted microposts

DEFF Research Database (Denmark)

Cavalli, Andrea; Blow, Matthew L.; Yeomans, Julia M.

2013-01-01

A lattice Boltzmann algorithm is used to simulate the slow spreading of drops on a surface patterned with slanted micro-posts. Gibb's pinning of the interface on the sides or top of the posts leads to unidirectional spreading over a wide range of contact angles and inclination angles of the posts....... Regimes for spreading in no, one or two directions are identified, and shown to agree well with a two-dimensional theory proposed in Chu, Xiao and Wang. A more detailed numerical analysis of the contact line shapes allows us to understand deviations from the two dimensional model, and to identify...

Plasma etching of patterned tungsten

International Nuclear Information System (INIS)

Franssila, S.

1993-01-01

Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

Influence factors on etching rate of PET nuclear pore membrane

International Nuclear Information System (INIS)

Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

2014-01-01

Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

Characterization of the porosity of human dental enamel and shear bond strength in vitro after variable etch times: initial findings using the BET method.

Science.gov (United States)

Nguyen, Trang T; Miller, Arthur; Orellana, Maria F

2011-07-01

(1) To quantitatively characterize human enamel porosity and surface area in vitro before and after etching for variable etching times; and (2) to evaluate shear bond strength after variable etching times. Specifically, our goal was to identify the presence of any correlation between enamel porosity and shear bond strength. Pore surface area, pore volume, and pore size of enamel from extracted human teeth were analyzed by Brunauer-Emmett-Teller (BET) gas adsorption before and after etching for 15, 30, and 60 seconds with 37% phosphoric acid. Orthodontic brackets were bonded with Transbond to the samples with variable etch times and were subsequently applied to a single-plane lap shear testing system. Pore volume and surface area increased after etching for 15 and 30 seconds. At 60 seconds, this increase was less pronounced. On the contrary, pore size appears to decrease after etching. No correlation was found between variable etching times and shear strength. Samples etched for 15, 30, and 60 seconds all demonstrated clinically viable shear strength values. The BET adsorption method could be a valuable tool in enhancing our understanding of enamel characteristics. Our findings indicate that distinct quantitative changes in enamel pore architecture are evident after etching. Further testing with a larger sample size would have to be carried out for more definitive conclusions to be made.

Consideration of correlativity between litho and etching shape

Science.gov (United States)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2012-03-01

We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

Dry Etching

DEFF Research Database (Denmark)

Stamate, Eugen; Yeom, Geun Young

2016-01-01

generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

OpenAIRE

Ajay Kumar; Dr. Pramod Kumar

2014-01-01

This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

Rock deformation equations and application to the study on slantingly installed disc cutter

Science.gov (United States)

Zhang, Zhao-Huang; Meng, Liang; Sun, Fei

2014-08-01

At present the mechanical model of the interaction between a disc cutter and rock mainly concerns indentation experiment, linear cutting experiment and tunnel boring machine (TBM) on-site data. This is not in line with the actual rock-breaking movement of the disc cutter and impedes to some extent the research on the rock-breaking mechanism, wear mechanism and design theory. Therefore, our study focuses on the interaction between the slantingly installed disc cutter and rock, developing a model in accordance with the actual rock-breaking movement. Displacement equations are established through an analysis of the velocity vector at the rock-breaking point of the disc cutter blade; the functional relationship between the displacement parameters at the rock-breaking point and its rectangular coordinates is established through an analysis of micro-displacement vectors at the rock-breaking point, thus leading to the geometric equations of rock deformation caused by the slantingly installed disc cutter. Considering the basically linear relationship between the cutting force of disc cutters and the rock deformation before and after the leap break of rock, we express the constitutive relations of rock deformation as generalized Hooke's law and analyze the effect of the slanting installation angle of disc cutters on the rock-breaking force. This will, as we hope, make groundbreaking contributions to the development of the design theory and installation practice of TBM.

Adiabatic tapered optical fiber fabrication in two step etching

Science.gov (United States)

Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

2016-01-01

A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

More vertical etch profile using a Faraday cage in plasma etching

Science.gov (United States)

Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

1999-05-01

Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

Device fabrication by plasma etching

International Nuclear Information System (INIS)

Mogab, C.J.

1980-01-01

Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

Optical-fiber strain sensors with asymmetric etched structures.

Science.gov (United States)

Vaziri, M; Chen, C L

1993-11-01

Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

Extreme wettability of nanostructured glass fabricated by non-lithographic, anisotropic etching

Science.gov (United States)

Yu, Eusun; Kim, Seul-Cham; Lee, Heon Ju; Oh, Kyu Hwan; Moon, Myoung-Woon

2015-01-01

Functional glass surfaces with the properties of superhydrophobicity/or superhydrohydrophilicity, anti-condensation or low reflectance require nano- or micro-scale roughness, which is difficult to fabricate directly on glass surfaces. Here, we report a novel non-lithographic method for the fabrication of nanostructures on glass; this method introduces a sacrificial SiO2 layer for anisotropic plasma etching. The first step was to form nanopillars on SiO2 layer-coated glass by using preferential CF4 plasma etching. With continuous plasma etching, the SiO2 pillars become etch-resistant masks on the glass; thus, the glass regions covered by the SiO2 pillars are etched slowly, and the regions with no SiO2 pillars are etched rapidly, resulting in nanopatterned glass. The glass surface that is etched with CF4 plasma becomes superhydrophilic because of its high surface energy, as well as its nano-scale roughness and high aspect ratio. Upon applying a subsequent hydrophobic coating to the nanostructured glass, a superhydrophobic surface was achieved. The light transmission of the glass was relatively unaffected by the nanostructures, whereas the reflectance was significantly reduced by the increase in nanopattern roughness on the glass. PMID:25791414

Etching and oxidation of InAs in planar inductively coupled plasma

Energy Technology Data Exchange (ETDEWEB)

Dultsev, F.N., E-mail: fdultsev@thermo.isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation)

2009-10-15

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH{sub 4}/H{sub 2}/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Etching and oxidation of InAs in planar inductively coupled plasma

Science.gov (United States)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Etching and oxidation of InAs in planar inductively coupled plasma

International Nuclear Information System (INIS)

Dultsev, F.N.; Kesler, V.G.

2009-01-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4 /H 2 /Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Grey water treatment by the slanted soil system with unsorted soil media.

Science.gov (United States)

Ushijima, Ken; Tanaka, Erina; Suzuki, Laís Yuko; Hijikata, Nowaki; Funamizu, Naoyuki; Ito, Ryusei

2015-01-01

This study evaluated the performance of unsorted soil media in the slanted soil treatment system, in terms of removal efficiency in suspended solids (SS), chemical oxygen demand (COD), linear alkylbenzene sulphonate (LAS) and Escherichia coli, and lifetime until clogging occurs. Unsorted soil performed longer lifetime until clogging than sorted fine soil. Removal of SS, COD, and LAS also performed same or better level in unsorted soil than fine soil. As reaction coefficients of COD and LAS were described as a function of the hydraulic loading rate, we can design a slanted soil system according to the expected hydraulic loading rate and the targeted level of COD or LAS in effluent. Regarding bacteria removal, unsorted soil performed sufficient reduction of E. coli for 5 weeks; however, the removal process occurred throughout all four chambers, while that of fine soil occurred in one to two chambers.

Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

International Nuclear Information System (INIS)

Aydemir, A; Akin, T

2012-01-01

In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

Optimization of microwave-induced chemical etching for rapid development of neutron-induced recoil tracks in CR-39 detectors

International Nuclear Information System (INIS)

Sahoo, G.S.; Tripathy, S.P.; Bandyopadhyay, T.

2014-01-01

A systematic investigation is carried out to optimize the recently established microwave-induced chemical etching (MICE) parameters for rapid development of neutron-induced recoil tracks in CR-39 detectors. Several combinations of all available microwave powers with different etching durations were analysed to determine the most suitable etching condition. The etching duration was found to reduce with increasing microwave power and the tracks were observed at about 18, 15, 12, and 6 min for 300, 450, 600 and 900 W of microwave powers respectively compared to a few hours in chemical etching (CE) method. However, for complete development of tracks the etching duration of 30, 40, 50 and 60 min were found to be suitable for the microwave powers of 900, 600, 450 and 300 W, respectively. Temperature profiles of the etchant for all the available microwave powers at different etching durations were generated to regulate the etching process in a controlled manner. The bulk etch rates at different microwave powers were determined by 2 methods, viz., gravimetric and removed thickness methods. A logarithmic expression was used to fit the variation of bulk etch rate with microwave power. Neutron detection efficiencies were obtained for all the cases and the results on track parameters obtained with MICE technique were compared with those obtained from another detector processed with chemical etching. - Highlights: • Microwave-induced chemical etching method is optimized for rapid development of recoil tracks due to neutrons in CR-39 detector. • Several combinations of microwave powers and etching durations are investigated to standardize the suitable etching condition. • Bulk-etch rates are determined for all microwave powers by two different methods, viz. gravimetric and removed thickness method. • The method is found to be simple, effective and much faster compared to conventional chemical etching

Influence of application methods of one-step self-etching adhesives on microtensile bond strength

Directory of Open Access Journals (Sweden)

Chul-Kyu Choi,

2011-05-01

Full Text Available Objectives The purpose of this study was to evaluate the effect of various application methods of one-step self-etch adhesives to microtensile resin-dentin bond strength. Materials and Methods Thirty-six extracted human molars were used. The teeth were assigned randomly to twelve groups (n = 15, according to the three different adhesive systems (Clearfil Tri-S Bond, Adper Prompt L-Pop, G-Bond and application methods. The adhesive systems were applied on the dentin as follows: 1 The single coating, 2 The double coating, 3 Manual agitation, 4 Ultrasonic agitation. Following the adhesive application, light-cure composite resin was constructed. The restored teeth were stored in distilled water at room temperature for 24 hours, and prepared 15 specimens per groups. Then microtensile bond strength was measured and the failure mode was examined. Results Manual agitation and ultrasonic agitation of adhesive significantly increased the microtensile bond strength than single coating and double coating did. Double coating of adhesive significantly increased the microtensile bond strength than single coating did and there was no significant difference between the manual agitation and ultrasonic agitation group. There was significant difference in microtensile bonding strength among all adhesives and Clearfil Tri-S Bond showed the highest bond strength. Conclusions In one-step self-etching adhesives, there was significant difference according to application methods and type of adhesives. No matter of the material, the manual or ultrasonic agitation of the adhesive showed significantly higher microtensile bond strength.

Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

Science.gov (United States)

Jin, Chenning; Yu, Bingjun; Liu, Xiaoxiao; Xiao, Chen; Wang, Hongbo; Jiang, Shulan; Wu, Jiang; Liu, Huiyun; Qian, Linmao

2017-12-01

In the present study, the indentation-induced selective etching approach is proposed to fabricate site-controlled pyramidal nanotips on Si(100) surface. Without any masks, the site-controlled nanofabrication can be realized by nanoindentation and post etching in potassium hydroxide (KOH) solution. The effect of indentation force and etching time on the formation of pyramidal nanotips was investigated. It is found that the height and radius of the pyramidal nanotips increase with the indentation force or etching time, while long-time etching can lead to the collapse of the tips. The formation of pyramidal tips is ascribed to the anisotropic etching of silicon and etching stop of (111) crystal planes in KOH aqueous solution. The capability of this fabrication method was further demonstrated by producing various tip arrays on silicon surface by selective etching of the site-controlled indent patterns, and the maximum height difference of these tips is less than 10 nm. The indentation-induced selective etching provides a new strategy to fabricate well site-controlled tip arrays for multi-probe SPM system, Si nanostructure-based sensors and high-quality information storage.

Etch induction time in cellulose nitrate: a new particle identification parameter

International Nuclear Information System (INIS)

Ruddy, F.H.; Knowles, H.B.; Luckstead, S.C.; Tripard, G.E.

1977-01-01

By the use of a 'continuous etch' method, it has been ascertained that particle tracks do not appear in cellulose nitrate track detectors until a certain finite time after etch has been started: this etch induction time may provide a unique signal for distinguishing ions of different atomic number, Z, and possibly also resolving the mass, M, of such ions. Empirical relations between etch induction time and various experimental quantities are described, as is a simple theory of the cause of etch induction time, which can be related to experimental evidence on hand. There is reason to believe that etch induction time appears in other types of plastic track detectors and may indeed be a general phenomenon in all track detectors. (Auth.)

Plasma treatment of porous GaAs surface formed by electrochemical etching method: Characterization and properties

International Nuclear Information System (INIS)

Saloum, S.; Naddaf, M.

2010-01-01

Porous GaAs samples were formed by electrochemical anodic etching of Zn doped p-type GaAs (100) wafers at different etching parameters (time, mode of applied voltage or current and electrolyte). The effect of etching parameters and plasma surface treatment on the optical properties of the prepared sample has been investigated by using room temperature photoluminescence (PL), Raman spectroscopy and reflectance spectroscopic measurements in the range (400-800 nm). The surface morphological changes were studied by using atomic force microscope. (author)

Development of deep silicon plasma etching for 3D integration technology

Directory of Open Access Journals (Sweden)

Golishnikov А. А.

2014-02-01

Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

Science.gov (United States)

Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

2008-01-01

This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (padhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

Groundwater flow to a horizontal or slanted well in an unconfined aquifer

Science.gov (United States)

Zhan, Hongbin; Zlotnik, Vitaly A.

2002-07-01

New semianalytical solutions for evaluation of the drawdown near horizontal and slanted wells with finite length screens in unconfined aquifers are presented. These fully three-dimensional solutions consider instantaneous drainage or delayed yield and aquifer anisotropy. As a basis, solution for the drawdown created by a point source in a uniform anisotropic unconfined aquifer is derived in Laplace domain. Using superposition, the point source solution is extended to the cases of the horizontal and slanted wells. The previous solutions for vertical wells can be described as a special case of the new solutions. Numerical Laplace inversion allows effective evaluation of the drawdown in real time. Examples illustrate the effects of well geometry and the aquifer parameters on drawdown. Results can be used to generate type curves from observations in piezometers and partially or fully penetrating observation wells. The proposed solutions and software are useful for the parameter identification, design of remediation systems, drainage, and mine dewatering.

Asymmetric liquid wetting and spreading on surfaces with slanted micro-pillar arrays

KAUST Repository

Yang, Xiaoming

2013-01-01

Uni-directional liquid spreading on asymmetric silicone-fabricated nanostructured surfaces has recently been reported. In this work, uniformly deflected polydimethylsiloxane (PDMS) micro-pillars covered with silver films were fabricated. Asymmetric liquid wetting and spreading behaviors in a preferential direction were observed on the slanted micro-pillar surfaces and a micro-scale thin liquid film advancing ahead of the bulk liquid droplet was clearly observed by high-speed video imaging. It is found that the slanted micro-pillar array is able to promote or inhibit the propagation of this thin liquid film in different directions by the asymmetric capillary force. The spreading behavior of the bulk liquid was guided and finally controlled by this micro-scale liquid film. Different spreading regimes are defined by the relationship between the liquid intrinsic contact angle and the critical angles, which were determined by the pillar height, pillar deflection angle and inter-pillar spacing. © The Royal Society of Chemistry 2013.

Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

Energy Technology Data Exchange (ETDEWEB)

Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

2008-10-01

Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

Influence of variation of etching conditions on the sensitivity of PADC detectors with a new evaluation method

International Nuclear Information System (INIS)

Fiechtner-Scharrer, A.; Mayer, S.; Boschung, M.; Whitelaw, A.

2011-01-01

At the Paul Scherrer Institut, a personal neutron dosimetry system based on chemically etched poly allyl diglycol carbonate (PADC) detectors and an automatic track counting (Autoscan 60) for neutron dose evaluations has been in routine use since 1998. Today, the hardware and the software of the Autoscan 60 are out of date, no spare components are available anymore and more sophisticated image-analysis systems are already developed. Therefore, a new evaluation system, the 'TASLIMAGE', was tested thoroughly in 2009 for linearity, reproducibility, influence of etching conditions and so forth, with the intention of replacing the Autoscan 60 in routine evaluations. The TASLIMAGE system is based on a microscope (high-quality Nikon optics) and an ultra-fast three-axis motorised control for scanning the detectors. In this paper, the TASLIMAGE system and its possibilities for neutron dose calculation are explained in more detail and the study of the influence of the variation of etching conditions on the sensitivity and background of the PADC detectors is described. The etching temperature and etching duration were varied, which showed that the etching conditions do not have a significant influence on the results of non-irradiated detectors. However, the sensitivity of irradiated detectors decreases by 5 % per 1 deg. C when increasing the etching temperature. For the variation of the etching duration, the influence on the sensitivity of irradiated detectors is less pronounced. (authors)

Etched ion track polymer membranes for sustained drug delivery

International Nuclear Information System (INIS)

Rao, Vijayalakshmi; Amar, J.V.; Avasthi, D.K.; Narayana Charyulu, R.

2003-01-01

The method of track etching has been successfully used for the production of polymer membranes with capillary pores. In the present paper, micropore membranes have been prepared by swift heavy ion irradiation of polycarbonate (PC). PC films were irradiated with ions of gold, silicon and oxygen of varying energies and fluence. The ion tracks thus obtained were etched chemically for various time intervals to get pores and these etched films were used as membranes for the drug release. Ciprofloxacine hydrochloride was used as model drug for the release studies. The drug content was estimated spectrophotometrically. Pore size and thus the drug release is dependent on the etching conditions, ions used, their energy and fluence. Sustained drug release has been observed in these membranes. The films can be selected for practical utilization by optimizing the irradiation and etching conditions. These films can be used as transdermal patches after medical treatment

Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

International Nuclear Information System (INIS)

Azooz, A.A.; Al-Jubbori, M.A.

2013-01-01

Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

Science.gov (United States)

Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

2014-08-01

To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

Overview Of Dry-Etch Techniques

Science.gov (United States)

Salzer, John M.

1986-08-01

With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

Thermodynamics of nuclear track chemical etching

Science.gov (United States)

Rana, Mukhtar Ahmed

2018-05-01

This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

Influence of water storage on fatigue strength of self-etch adhesives.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2015-12-01

The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

Science.gov (United States)

Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

2018-04-01

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

Differentiation of grain orientation with corrosive and colour etching on a granular bainitic steel.

Science.gov (United States)

Reisinger, S; Ressel, G; Eck, S; Marsoner, S

2017-08-01

This study presents a detailed verification of the etching methods with Nital and Klemm on a granular bainitic steel. It is shown that both methods allow the identification of the crystal orientation, whereas Klemm etching enables also a quantification of the apparent phases, as also retained austenite can be distinguished from the other bainitic microstructures. A combination of atom probe tomography with electron-back-scattered-diffraction showed that both etching methods emphasize the bainitic {100} crystal orientation. However, a cross-section produced by focused ion beam evidenced that Klemm etching leads to the formation of a topography of the different oriented bainitic crystals that directly affects the thickness and therefore the apparent colour of the deposited layer formed during etching. Copyright © 2017 Elsevier Ltd. All rights reserved.

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1980-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1979-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

Science.gov (United States)

Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

1975-01-01

Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

Quadrilateral Micro-Hole Array Machining on Invar Thin Film: Wet Etching and Electrochemical Fusion Machining

Directory of Open Access Journals (Sweden)

Woong-Kirl Choi

2018-01-01

Full Text Available Ultra-precision products which contain a micro-hole array have recently shown remarkable demand growth in many fields, especially in the semiconductor and display industries. Photoresist etching and electrochemical machining are widely known as precision methods for machining micro-holes with no residual stress and lower surface roughness on the fabricated products. The Invar shadow masks used for organic light-emitting diodes (OLEDs contain numerous micro-holes and are currently machined by a photoresist etching method. However, this method has several problems, such as uncontrollable hole machining accuracy, non-etched areas, and overcutting. To solve these problems, a machining method that combines photoresist etching and electrochemical machining can be applied. In this study, negative photoresist with a quadrilateral hole array pattern was dry coated onto 30-µm-thick Invar thin film, and then exposure and development were carried out. After that, photoresist single-side wet etching and a fusion method of wet etching-electrochemical machining were used to machine micro-holes on the Invar. The hole machining geometry, surface quality, and overcutting characteristics of the methods were studied. Wet etching and electrochemical fusion machining can improve the accuracy and surface quality. The overcutting phenomenon can also be controlled by the fusion machining. Experimental results show that the proposed method is promising for the fabrication of Invar film shadow masks.

Plasma treatment of porous GaAs surface formed by electrochemical etching method: Characterization and properties

International Nuclear Information System (INIS)

Naddaf, M.; Saloum, S.

2008-12-01

Porous GaAs samples were formed by electrochemical anodic etching of Zn doped p-type GaAs (100) wafers at different etching parameters (time, mode of applied voltage or current and electrolyte). The effect of etching parameters and plasma surface treatment on the optical properties of the prepared sample has been investigated by using room temperature photoluminescence (PL), Raman spectroscopy and reflectance spectroscopic measurements in the range (400-800 nm). The surface morphological changes were studied by using atomic force microscope. It has been found that etching parameters can be controlled to produce a considerably low optical reflectivity porous GaAs layer, attractive for use in solar cells. In addition, it has been observed that the deposition of plasma polymerized HMDSO thin film on porous GaAs surface can be utilized to produce a surface with novel optical properties interesting for solar cells and optoelectronic devices. (author)

Self-aligned mask renewal for anisotropically etched circular micro- and nanostructures

International Nuclear Information System (INIS)

Kaspar, Peter; Jäckel, Heinz; Holzapfel, Sebastian; Windhab, Erich J

2011-01-01

The top–down fabrication of high aspect ratio circular micro- and nanostructures in silicon nitride is presented. A new method is introduced to increase the aspect ratio of anisotropically etched holes by a factor of more than two with respect to the results obtained from an established dry-etching process. The method is based on the renewal of an etching mask after a first etching step has been completed. Mask renewal is done by line-of-sight deposition of a masking layer on the surface of the sample, which is mounted at an angle with respect to the deposition direction. No additional alignment step is required. The proof of principle is performed for silicon nitride etching through a mask of titanium, but the method has great potential to be applicable to a wide variety of substrate–mask combinations and to find entrance into various engineering fields. Two specific applications are highlighted. Firstly, a thick silicon nitride hardmask is used for the fabrication of deeply etched photonic crystal holes in indium phosphide (InP). For holes of 280 nm diameter, a record aspect ratio of 20 and an overall selectivity of 28.5 between a positive-tone resist layer and InP are reported. Secondly, the use of perforated silicon nitride membranes for droplet formation for applications in food engineering or pharmaceutics is addressed. Preliminary results show a potential for the self-aligned mask renewal method to exceed state-of-the-art membrane quality in terms of pore size, aspect ratio and membrane stability.

Thermal etching of silver: Influence of rolling defects

Energy Technology Data Exchange (ETDEWEB)

Ollivier, M., E-mail: o.maelig@imperial.ac.uk [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom); Harker, R.M. [AWE Aldermaston, Aldermaston, Reading RG7 4PR (United Kingdom); Chater, R.J.; Gourlay, C.M. [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom)

2016-08-15

Silver is well known to be thermally etched in an oxygen-rich atmosphere and has been extensively studied in the laboratory to understand thermal etching and to limit its effect when this material is used as a catalyst. Yet, in many industrial applications the surface of rolled silver sheets is used without particular surface preparation. Here, it is shown by combining FIB-tomography, FIB-SIMS and analytical SEM that the kinetics of thermal etch pitting are significantly faster on rolled Ag surfaces than on polished surfaces. This occurs due to range of interacting phenomena including (i) the reaction of subsurface carbon-contamination with dissolved oxygen to form pores that grow to intersect the surface, (ii) surface reconstruction around corrosion pits and surface scratches, and (iii) sublimation at low pressure and high temperature. A method to identify subsurface pores is developed to show that the pores have (111) and (100) internal facets and may be filled with a gas coming from the chemical reaction of oxygen and carbon contamination. - Highlights: Thermal etching of industrial silver sheets vs. polished silver sheets Effect of annealing atmosphere on the thermal etching of silver: surface and subsurface characterization Link between etch pitting and defects induced by rolling. FIB-tomography coupled with EBSD for determining crystal planes of the facets of subsurface pores. FIB-SIMS characterization to probe the gas confined inside subsurface pores.

Dry etching technologies for reflective multilayer

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Defect sensitive etching of hexagonal boron nitride single crystals

Science.gov (United States)

Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

2017-12-01

Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

MAX-DOAS formaldehyde slant column measurements during CINDI: intercomparison and analysis improvement

Directory of Open Access Journals (Sweden)

G. Pinardi

2013-01-01

Full Text Available We present intercomparison results for formaldehyde (HCHO slant column measurements performed during the Cabauw Intercomparison campaign of Nitrogen Dioxide measuring Instruments (CINDI that took place in Cabauw, the Netherlands, in summer 2009. During two months, nine atmospheric research groups simultaneously operated MAX-DOAS (MultiAXis Differential Optical Absorption Spectroscopy instruments of various designs to record UV-visible spectra of scattered sunlight at different elevation angles that were analysed using common retrieval settings. The resulting HCHO data set was found to be highly consistent, the mean difference between instruments generally not exceeding 15% or 7.5 × 10¹⁵ molec cm⁻², for all viewing elevation angles. Furthermore, a sensitivity analysis was performed to investigate the uncertainties in the HCHO slant column retrieval when varying key input parameters such as the molecular absorption cross sections, correction terms for the Ring effect or the width and position of the fitting interval. This study led to the identification of potentially important sources of errors associated with cross-correlation effects involving the Ring effect, O₄, HCHO and BrO cross sections and the DOAS closure polynomial. As a result, a set of updated recommendations was formulated for HCHO slant column retrieval in the 336.5–359 nm wavelength range. To conclude, an error budget is proposed which distinguishes between systematic and random uncertainties. The total systematic error is estimated to be of the order of 20% and is dominated by uncertainties in absorption cross sections and related spectral cross-correlation effects. For a typical integration time of one minute, random uncertainties range between 5 and 30%, depending on the noise level of individual instruments.

Marginal microleakage of resin-modified glass-ionomer and composite resin restorations: Effect of using etch-and-rinse and self-etch adhesives

Directory of Open Access Journals (Sweden)

Maryam Khoroushi

2012-01-01

Full Text Available Objectives: Previous studies have shown that dental adhesives increase the bond strength of resin-modified glass-ionomer (RMGI restorative materials to dentin. This in vitro study has evaluated the effect of etch-and-rinse and self-etch bonding systems v/s cavity conditioner, and in comparison to similar composite resin restorations on maintaining the marginal sealing of RMGI restorations. Materials and Methods: 98 rectangular cavities (2.5×3×1.5 mm were prepared on buccal and palatal aspects of 49 human maxillary premolars, randomly divided into 7 groups (N=14. The cavities in groups 1, 2 and 3 were restored using a composite resin (APX. The cavities in groups 4, 5, 6 and 7 were restored using a resin-modified glass-ionomer (Fuji II LC. Before restoring, adhesive systems (Optibond FL = OFL, three-step etch-and-rinse; One Step Plus = OSP, two-step etch-and-rinse; Clearfil Protect Bond = CPB, two-step self-etch were used as bonding agents in groups 1-6 as follow: OFL in groups 1 and 4, OSP in groups 2 and 5, and CPB in groups 3 and 6, respectively. The specimens in group 7 were restored with GC cavity conditioner and Fuji II LC. All the specimens were thermo-cycled for 1000 cycles. Microleakage scores were determined using dye penetration method. Statistical analyzes were carried out with Kruskal-Wallis and Mann-Whitney U tests (α=0.05. Results: There were significant differences in microleakage scores at both enamel and dentinal margins between the study groups (P<0.05. The lowest microleakage scores at enamel and dentin margins of RMGI restorations were observed in group 6. Conclusion: Use of two-step self-etch adhesive, prior to restoring cervical cavities with RMGIC, seems to be more efficacious than the conventional cavity conditioner in decreasing marginal microleakage.

Process for etching zirconium metallic objects

International Nuclear Information System (INIS)

Panson, A.J.

1988-01-01

In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

The burden of secrecy? No effect on hill slant estimation and beanbag throwing.

Science.gov (United States)

Pecher, Diane; van Mierlo, Heleen; Cañal-Bruland, Rouwen; Zeelenberg, René

2015-08-01

Slepian, Masicampo, Toosi, and Ambady (2012, Experiment 1) reported that participants who recalled a big secret estimated a hill as steeper than participants who recalled a small secret. This finding was interpreted as evidence that secrets are experienced as physical burdens. In 2 experiments, we tried to replicate this finding, but, despite larger power, did not find a difference in slant estimates between participants who recalled a big secret and those who recalled a small secret. This finding was further corroborated by a meta-analysis that included 8 published data sets of exact replications, which indicates that thinking of a big secret does not affect hill slant estimation. In a third experiment, we also failed to replicate the effect of recalling a secret on throwing a beanbag at a target (Slepian et al., 2012, Experiment 2). Together, our findings question the robustness of the original empirical findings. (c) 2015 APA, all rights reserved).

Optimization of permanganic etching of polyethylenes for scanning electron microscopy

International Nuclear Information System (INIS)

Naylor, K.L.; Phillips, P.J.

1983-01-01

The permanganic etching technique has been studied as a function of time, temperature, and concentration for a series of polyethylenes. Kinetic studies show that a film of reaction products builds up on the surface, impeding further etching, an effect which is greatest for the lowest-crystallinity polymers. SEM studies combined with EDS show that the film contains sulfur, potassium and some manganese. An artifact is produced by the etching process which is impossible to remove by washing procedures if certain limits of time, temperature, and concentration are exceeded. For lower-crystallinity polyethylenes multiple etching and washing steps were required for optimal resolution. Plastic deformation during specimen preparation, whether from scratches or freeze fracturing, enhances artifact formation. When appropriate procedures are used, virtually artifact-free surfaces can be produced allowing a combination of permanganic etching and scanning electron microscopy to give a rapid method for detailed morphological characterization of bulk specimens

Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

Energy Technology Data Exchange (ETDEWEB)

Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

2015-03-15

Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

Science.gov (United States)

Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

2017-10-24

Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

Redacción de la Constitución en clave no masculina // Wording of the Constitution in a non masculine slant

Directory of Open Access Journals (Sweden)

Antonio Torres del Moral

2017-12-01

Language is an essential component of the law. The law and the justice are expressed with words. The juridic languages have historically been expresed from the male slant. This is a trial of new wording of certain passages of the Spanish Constitution (the preamble and the articles 1 to 29 trying to overcome their male slant without changing the juridic substance.

The etching behaviour of silicon carbide compacts

International Nuclear Information System (INIS)

Jepps, N.W.; Page, T.F.

1981-01-01

A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

Evaluation of silicon-chemiluminescence monitoring as a novel method for atomic fluorine determination and end point detection in plasma etch systems

NARCIS (Netherlands)

Zijlstra, P.A.; Beenakker, C.I.M.

1981-01-01

Optical methods for the detection of atomic fluorine in plasma etch systems are discussed and an experimental comparison is made between detection by optical emission and by a novel method based on the chemiluminescence from solid silicon in the presence of atomic fluorine. Although both methods

Ion transport by gating voltage to nanopores produced via metal-assisted chemical etching method

Science.gov (United States)

Van Toan, Nguyen; Inomata, Naoki; Toda, Masaya; Ono, Takahito

2018-05-01

In this work, we report a simple and low-cost way to create nanopores that can be employed for various applications in nanofluidics. Nano sized Ag particles in the range from 1 to 20 nm are formed on a silicon substrate with a de-wetting method. Then the silicon nanopores with an approximate 15 nm average diameter and 200 μm height are successfully produced by the metal-assisted chemical etching method. In addition, electrically driven ion transport in the nanopores is demonstrated for nanofluidic applications. Ion transport through the nanopores is observed and could be controlled by an application of a gating voltage to the nanopores.

Visualization of boron in molybdenum by α-rays track etching method and tritium autoradiography

International Nuclear Information System (INIS)

Saito, Hideo; Morita, Fumio

2003-01-01

Molybdenum alloys addicted with < 0.02 ppm B to 160 ppm B were analyzed by α-rays track etching (ATE) method irradiated by thermal neutron for 12 hours using atomic reactor of Rikkyo University and Japan atomic reactor of JRR-4. It was found that boron was segregated along grain boundaries and in the matrix. We analyzed boron distribution in the vicinity of the triple junctions at grain boundaries and in the matrix by the statistical frequency of α-rays tracks. Also we studied tritium autoradiography by cathodic charging method. Visualization of boron distribution was confirmed along the grain boundary which seemed to be effective trapping sites of hydrogen. (author)

Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

International Nuclear Information System (INIS)

Dajko, G.

1991-01-01

Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

Effect of ferric sulfate contamination on the bonding effectiveness of etch-and-rinse and self-etch adhesives to superficial dentin

OpenAIRE

Shahram Farzin Ebrahimi; Niloofar Shadman; Arezoo Abrishami

2013-01-01

Aim: This study investigated the effect of one hemostatic agent on the shear bond strength of self-etch and etch-and-rinse adhesive systems. Materials and Methods: Sixty extracted third molars were selected. After preparing a flat surface of superficial dentin, they were randomly divided into six groups. Adhesives were Tetric N-Bond, AdheSE, and AdheSE One F. Before applying adhesives, surfaces were contaminated with ViscoStat for 60 s in three groups and rinsed. Then composite were attached ...

Etching in microsystem technology

CERN Document Server

Kohler, Michael

2008-01-01

Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

Etching conditions and shape of tracks

International Nuclear Information System (INIS)

Kudo, Shuichi

1979-01-01

The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

Evaluation study between the chemical and electrochemical etching for solid state nuclear track detectors

International Nuclear Information System (INIS)

Ramos, S.; Espinosa, G.; Golzarri, J.I.

1991-01-01

Since there are several methods of etching in the solid state nuclear track detectors (SSNTD) it is necessary to know which gives the best results for a specific problem. The purpose of this work is to analyze and compare both the chemical etching and the electrochemical etching. The SSNTD has a preferential response to certain kinds of particles and energies, according to the material used as detector. On the other hand the efficiency is a function of the incidence angle of the radiation and some other parameters such as temperature, concentration and type of solvent used in the etching process, and the method used for the etching. Therefore, it is necessary to extend as much as possible our knowledge of such parameters in order to choose the more efficient one for a specific problem

Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

Science.gov (United States)

Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2018-03-30

The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

Science.gov (United States)

Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

2018-02-01

Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

Dry etching for microelectronics

CERN Document Server

Powell, RA

1984-01-01

This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

Neutron activation analysis of uranium by means of electrochemical etching of tracks in lawsan detectors

International Nuclear Information System (INIS)

Kim Son Chun; Chuburkov, Yu.T.; Zvara, I.I.

1982-01-01

The method of neutron activation analysis of uranium in natural and artificial materials using track lavsan detectors of fission fragments has been developed. The method of electrochemical etching (etching reagent NaOH) of fragment tracks in lavsan is improved. Using statistical method of experiment planning the equation, describing the dependence of diometer value of fission fragment tracks on parameters of etching process, is obtained. The analysis sensitivity is 10 - 7 g/g - 10 - 8 g/g

Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

Directory of Open Access Journals (Sweden)

Yunata Ersyzario Edo

2015-01-01

Full Text Available Diamond-Like Carbon (DLC and Chemical Vapor Deposition (CVD-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS. Micro-texturing into these hard coated molds and dies provides a productive tool to duplicate the original mother micro-patterns onto various work materials and to construct any tailored micro-textures for sensors and actuators. In the present paper, the high density oxygen plasma etching method is utilized to make micro-line and micro-groove patterns onto the DLC and diamond coatings. Our developing oxygen plasma etching system is introduced together with characterization on the plasma state during etching. In this quantitative plasma diagnosis, both the population of activated species and the electron and ion densities are identified through the emissive light spectroscopy and the Langmuir probe method. In addition, the on-line monitoring of the plasmas helps to describe the etching process. DLC coated WC (Co specimen is first employed to describe the etching mechanism by the present method. Chemical Vapor Deposition (CVD diamond coated WC (Co is also employed to demonstrate the reliable capacity of the present high density oxygen plasma etching. This oxygen plasma etching performance is discussed by comparison of the etching rates.

Femtosecond laser etching of dental enamel for bracket bonding.

Science.gov (United States)

Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

2013-09-01

The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

Wafer Surface Charge Reversal as a Method of Simplifying Nanosphere Lithography for Reactive Ion Etch Texturing of Solar Cells

Directory of Open Access Journals (Sweden)

Daniel Inns

2007-01-01

Full Text Available A simplified nanosphere lithography process has been developed which allows fast and low-waste maskings of Si surfaces for subsequent reactive ion etching (RIE texturing. Initially, a positive surface charge is applied to a wafer surface by dipping in a solution of aluminum nitrate. Dipping the positive-coated wafer into a solution of negatively charged silica beads (nanospheres results in the spheres becoming electrostatically attracted to the wafer surface. These nanospheres form an etch mask for RIE. After RIE texturing, the reflection of the surface is reduced as effectively as any other nanosphere lithography method, while this batch process used for masking is much faster, making it more industrially relevant.

Fabrication of different pore shapes by multi-step etching technique in ion-irradiated PET membranes

Science.gov (United States)

Mo, D.; Liu, J. D.; Duan, J. L.; Yao, H. J.; Latif, H.; Cao, D. L.; Chen, Y. H.; Zhang, S. X.; Zhai, P. F.; Liu, J.

2014-08-01

A method for the fabrication of different pore shapes in polyethylene terephthalate (PET)-based track etched membranes (TEMs) is reported. A multi-step etching technique involving etchant variation and track annealing was applied to fabricate different pore shapes in PET membranes. PET foils of 12-μm thickness were irradiated with Bi ions (kinetic energy 9.5 MeV/u, fluence 106 ions/cm2) at the Heavy Ion Research Facility (HIRFL, Lanzhou). The cross-sections of fundamental pore shapes (cylinder, cone, and double cone) were analyzed. Funnel-shaped and pencil-shaped pores were obtained using a two-step etching process. Track annealing was carried out in air at 180 °C for 120 min. After track annealing, the selectivity of the etching process decreased, which resulted in isotropic etching in subsequent etching steps. Rounded cylinder and rounded cone shapes were obtained by introducing a track-annealing step in the etching process. Cup and spherical funnel-shaped pores were fabricated using a three- and four-step etching process, respectively. The described multi-step etching technique provides a controllable method to fabricate new pore shapes in TEMs. Introduction of a variety of pore shapes may improve the separation properties of TEMs and enrich the series of TEM products.

Toward reliable morphology assessment of thermosets via physical etching: Vinyl ester resin as an example

Directory of Open Access Journals (Sweden)

J. Karger-Kocsis

2013-05-01

Full Text Available The morphology of peroxide-cured, styrene crosslinked, bisphenol A-based vinyl ester (VE resin was investigated by atomic force microscopy (AFM after ‘physical’ etching with different methods. Etching was achieved by laser ablation, atmospheric plasma treatment and argon ion bombardment. Parameters of the etching were varied to get AFM scans of high topography resolution. VE exhibited a nanoscaled nodular structure the formation of which was ascribed to complex intra- and intermolecular reactions during crosslinking. The microstructure resolved after all the above physical etching techniques was similar provided that optimized etching and suitable AFM scanning conditions were selected. Nevertheless, with respect to the ‘morphology visualization’ these methods follow the power ranking: argon bombardment > plasma treatment > laser ablation.

Electrochemical etching of a niobium foil in methanolic HF for electrolytic capacitor

International Nuclear Information System (INIS)

Kim, Kyungmin; Park, Jiyoung; Cha, Gihoon; Yoo, Jeong Eun; Choi, Jinsub

2013-01-01

Electrochemical etching of niobium foil in order to enlarge the surface area for the application in electrolytic capacitor was carried out in a methanolic electrolyte. We found that the pit density and depth are not linearly proportional to concentration of HF and applied potential: there is the optimal concentration of HF at each applied potential. The optimal etching condition was obtained at 50 V in 0.99 vol.% HF, which exhibited the capacitance of 350 μF cm −2 . Pit density and depth of pits on electrochemical etched Nb foil under different conditions were counted from SEM images and electrochemical impedance spectroscopy (EIS) of the etched Nb foils was carried out for the capacitance measurement. Equivalent circuit model showing less than 5% error was suggested for applying to the etched niobium foil. - Highlights: • Surface enlargement of Nb foil can be achieved by electrochemical etching in methanolic HF. • Electrolytic capacitor of etched niobium foil exhibits a capacitance of 350 μF cm −2 . • The method provides a way of developing commercially viable process

Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

Directory of Open Access Journals (Sweden)

Yichuan Dai

2017-06-01

Full Text Available Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge. In this work, a separated type maskless etching system based on atmospheric pressure He/O2 plasma jet and microfabricated Micro Electro Mechanical Systems (MEMS nozzle have been developed with advantages of simple-structure, flexibility, and parallel processing capacity. The plasma was generated in the glass tube, forming the micron level plasma jet between the nozzle and the surface of polymer. The plasma microjet was capable of removing photoresist without masks since it contains oxygen reactive species verified by spectra measurement. The experimental results illustrated that different features of microholes etched by plasma microjet could be achieved by controlling the distance between the nozzle and the substrate, additive oxygen ratio, and etch time, the result of which is consistent with the analysis result of plasma spectra. In addition, a parallel etching process was also realized by plasma microjets array.

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

Energy Technology Data Exchange (ETDEWEB)

Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

2006-12-01

This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

International Nuclear Information System (INIS)

Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

2014-01-01

Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

Directory of Open Access Journals (Sweden)

Ana Paula Morales Cobra Carvalho

2009-06-01

Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

Energy Technology Data Exchange (ETDEWEB)

Hirota, Kosa, E-mail: hirota-kousa@sme.hitachi-hitec.com; Itabashi, Naoshi; Tanaka, Junichi [Hitachi, Ltd., Central Research Laboratory, 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185-8601 (Japan)

2014-11-01

The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaning method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.

Model calculations for electrochemically etched neutron detectors

International Nuclear Information System (INIS)

Pitt, E.; Scharmann, A.; Werner, B.

1988-01-01

Electrochemical etching has been established as a common method for visualisation of nuclear tracks in solid state nuclear track detectors. Usually the Mason equation, which describes the amplification of the electrical field strength at the track tip, is used to explain the treeing effect of electrochemical etching. The yield of neutron-induced tracks from electrochemically etched CR-39 track detectors was investigated with respect to the electrical parameters. A linear dependence on the response from the macroscopic field strength was measured which could not be explained by the Mason equation. It was found that the reality of a recoil proton track in the detector does not fit the boundary conditions which are necessary when the Mason equation is used. An alternative model was introduced to describe the track and detector geometry in the case of a neutron track detector. The field strength at the track tip was estimated with this model and compared with the experimental data, yielding good agreement. (author)

Plasma etching of electrospun polymeric nanofibres

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

2006-10-25

Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

Science.gov (United States)

Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

2016-06-01

A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

Preparation of Chemically Etched Tips for Ambient Instructional Scanning Tunneling Microscopy

Science.gov (United States)

Zaccardi, Margot J.; Winkelmann, Kurt; Olson, Joel A.

2010-01-01

A first-year laboratory experiment that utilizes concepts of electrochemical tip etching for scanning tunneling microscopy (STM) is described. This experiment can be used in conjunction with any STM experiment. Students electrochemically etch gold STM tips using a time-efficient method, which can then be used in an instructional grade STM that…

Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

Science.gov (United States)

Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2017-10-01

To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

Selective laser etching or ablation for fabrication of devices

KAUST Repository

Buttner, Ulrich

2017-01-12

Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can be used to fabricate a variety of features, including an electrode, an interconnect, a channel, a reservoir, a contact hole, a trench, a pad, or a combination thereof. A variety of devices fabricated according to the methods are also provided. In some aspects, capacitive humidity sensors are provided that can be fabricated according to the provided methods. The capacitive humidity sensors can be fabricated with intricate electrodes, e.g. having a fractal pattern such as a Peano curve, a Hilbert curve, a Moore curve, or a combination thereof.

Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

Science.gov (United States)

Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

2017-06-01

The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

Etching Behavior of Aluminum Alloy Extrusions

Science.gov (United States)

Zhu, Hanliang

2014-11-01

The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

The slant of the forehead as a craniofacial feature of impulsiveness

Directory of Open Access Journals (Sweden)

J. David Guerrero-Apolo

2018-03-01

Full Text Available Objective: Impulsiveness has been the subject of much research, but little is known about the possible relationship between craniofacial anatomy and impulsiveness. The present study was designed to investigate the relationship between one aspect of craniofacial structure (the angle of inclination of the forehead and impulsiveness. Method: Photographs in profile were obtained from 131 volunteers who had been fined for driving at high speed and were undergoing a court-mandated driving license point-recovery course. They completed the Barratt Impulsiveness Scale (BIS-11, the Impulsive Behavior Scale (UPPS-P, and Zuckerman’s Sensation Seeking Scale (V. The angle of the slant of the forehead was measured with a photographic support and a protractor. Results: High positive concordance was found between forehead inclination and 14 out of the 15 impulsiveness factors studied. Conclusions: The angle of inclination of the forehead was significantly associated with self-reported impulsiveness in this sample of traffic violators.

Applications of slant collimators to cardiovascular nuclear medicine

International Nuclear Information System (INIS)

Nishimura, Tsunehiko; Uehara, Toshio; Hayashi, Makoto; Kagawa, Masaaki; Kozuka, Takahiro

1980-01-01

The RI examination of hearts is attracting increasingly interest as cardiovascular nuclear medicine in recent years. As for the background, there are the development of such radioactive agents with high heart-muscle specificity as 201 TICI and the minicomputer capability of measuring rapid contraction and expansion of hearts. Under the situation, the variety of contrivance in collimators is attempted for higher accuracy in grasping the form and function of hearts. With a 30 deg inclination slant type collimator (made by EDC firm) which became available, its applications as cardiovascular nuclear medicine have been examined in heart-muscle scintigraphy and heart RI angiography. These results are described. In the above connection, a bifocal collimator and a seven pinhole collimator are also explained briefly. (J.P.N.)

Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

Science.gov (United States)

Held, J.; Gaspar, J.; Ruther, P.; Hagner, M.; Cismak, A.; Heilmann, A.; Paul, O.

2010-02-01

This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

International Nuclear Information System (INIS)

Held, J; Gaspar, J; Ruther, P; Paul, O; Hagner, M; Cismak, A; Heilmann, A

2010-01-01

This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

Surface etching technologies for monocrystalline silicon wafer solar cells

Science.gov (United States)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

Gamma dosimetry with CR-39 etch track detector

International Nuclear Information System (INIS)

Matiullah; Dogar, A.H.; Ahmad, N.; Amin, M.; Kudo, Katsuhisa

1999-01-01

To preserve and improve the safety of food for commercial purposes, it is exposed to high gamma-ray doses. The gamma-ray doses used for this purpose range from 0.15 kGy to 50 kGy. At such high doses, the etching characteristics of CR-39 are severely affected. This property, therefore, can be used to develop a CR-39-based gamma dosimeter. In this context, systematic studies were carried out and the bulk etching rate was determined as a function of gamma-ray dose using different methods. (author)

The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

Science.gov (United States)

Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

Construction of cable-stayed prestressed concrete bridge, having Japan`s first independent single slanted tower; Nippon hatsu no keisha shuto wo motsu PC shachokyo no seko

Energy Technology Data Exchange (ETDEWEB)

Sanada, Y.; Naito, H. [Penta-Ocean Construction Co. Ltd., Tokyo (Japan); Takeuchi, H.; Mikami, T.

1994-08-01

In the Hachinoe Harbor, Aomori prefecture, a man-made island (Hachinoe Port Island) is being constructed by reclamation. When proceeding this undertaking plan, a construction of the Hachinoe Harbor Port Island connection bridge, which connects the man-made island with the existing harbor district, was made an urgent necessity. This connecting bridge is a bridge with a total length of 256.56m, and is constituted of two span continuous PC slanted bridge and three span continuous PC box girder bridge. This slanted bridge has become an asymmetrical structure due to several conditions coming from a plan, and moreover it has the first structural shape as a road bridge in Japan, of which main tower is 15{degree} slanted independent single tower type, there are more problems for the work execution compared with other normal slanted bridges. In addition, because it is situated in an extremely cruel environment like in the cold region and in the marine environment, a sufficient consideration is required for its design and work execution in order to insure a durability. In this report, an outline of work execution content about PC slanted bridge part currently under a construction zealously aiming at a completion in the end of the fiscal year 1994 is introduced. 2 refs., 14 figs., 4 tabs.

Energy dependence of fast neutron dosimetry using electrochemical etching

International Nuclear Information System (INIS)

Su, S.J.; Morgan, K.Z.

1978-01-01

Registration of fast-neutron induced recoil tracks by the electrochemical etching technique as applied to sensitive Lexan polycarbonate foils provides a simple and inexpensive means of fast neutron personnel dosimetry. The sensitivity (tracks/neutron) of recoil particle registration is given as a function of neutron energy. Neutrons of 7 Li (p,n) 7 Be, 3 T (d,n) 4 He and 9 B, respectively. Results are compared with other studies using other neutron sources and conventional etching method

Identifying Partisan Slant in News Articles and Twitter during Political Crises

OpenAIRE

Karamshuk, Dmytro; Lokot, Tetyana; Pryymak, Oleksandr; Sastry, Nishanth

2017-01-01

In this paper, we are interested in understanding the interrelationships between mainstream and social media in forming public opinion during mass crises, specifically in regards to how events are framed in the mainstream news and on social networks and to how the language used in those frames may allow to infer political slant and partisanship. We study the lingual choices for political agenda setting in mainstream and social media by analyzing a dataset of more than 40M tweets and more than...

Plasma etching: Yesterday, today, and tomorrow

Energy Technology Data Exchange (ETDEWEB)

Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

2013-09-15

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

Plasma etching: Yesterday, today, and tomorrow

International Nuclear Information System (INIS)

Donnelly, Vincent M.; Kornblit, Avinoam

2013-01-01

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

[Evaluation of shear bond strengths of self-etching and total-etching dental adhesives to enamel and dentin].

Science.gov (United States)

Yu, Ling; Liu, Jing-Ming; Wang, Xiao-Yan; Gao, Xue-Jun

2009-03-01

To evaluate the shear bond strengths of four dental adhesives in vitro. The facial surfaces of 20 human maxillary incisors were prepared to expose fresh enamel and randomly divided into four groups, in each group 5 teeth were bonded with one adhesives: group A (Clearfil Protect Bond, self-etching two steps), group B (Adper( Prompt, self-etching one step), group C (SwissTEC SL Bond, total-etching two steps), group D (Single Bond, total-etching two steps). Shear bond strengths were determined using an universal testing machine after being stored in distilled water for 24 h at 37 degrees C. The bond strengths to enamel and dentin were (25.33 +/- 2.84) and (26.07 +/- 5.56) MPa in group A, (17.08 +/- 5.13) and (17.93 +/- 4.70) MPa in group B, (33.14 +/- 6.05) and (41.92 +/- 6.25) MPa in group C, (22.51 +/- 6.25) and (21.45 +/- 7.34) MPa in group D. Group C showed the highest and group B the lowest shear bond strength to enamel and dentin among the four groups. The two-step self-etching adhesive showed comparable shear bond strength to some of the total-etching adhesives and higher shear bond strength than one-step self-etching adhesive.

High-Performance Black Multicrystalline Silicon Solar Cells by a Highly Simplified Metal-Catalyzed Chemical Etching Method

KAUST Repository

Ying, Zhiqin

2016-05-20

A wet-chemical surface texturing technique, including a two-step metal-catalyzed chemical etching (MCCE) and an extra alkaline treatment, has been proven as an efficient way to fabricate high-efficiency black multicrystalline (mc) silicon solar cells, whereas it is limited by the production capacity and the cost cutting due to the complicated process. Here, we demonstrated that with careful control of the composition in etching solution, low-aspect-ratio bowl-like nanostructures with atomically smooth surfaces could be directly achieved by improved one-step MCCE and with no posttreatment, like alkali solution. The doublet surface texture of implementing this nanobowl structure upon the industrialized acidic-textured surface showed concurrent improvement in optical and electrical properties for realizing 18.23% efficiency mc-Si solar cells (156 mm × 156 mm), which is sufficiently higher than 17.7% of the solely acidic-textured cells in the same batch. The one-step MCCE method demonstrated in this study may provide a cost-effective way to manufacture high-performance mc-Si solar cells for the present photovoltaic industry. © 2016 IEEE.

Two memories for geographical slant: separation and interdependence of action and awareness

Science.gov (United States)

Creem, S. H.; Proffitt, D. R.; Kaiser, M. K. (Principal Investigator)

1998-01-01

The present study extended previous findings of geographical slant perception, in which verbal judgments of the incline of hills were greatly overestimated but motoric (haptic) adjustments were much more accurate. In judging slant from memory following a brief or extended time delay, subjects' verbal judgments were greater than those given when viewing hills. Motoric estimates differed depending on the length of the delay and place of response. With a short delay, motoric adjustments made in the proximity of the hill did not differ from those evoked during perception. When given a longer delay or when taken away from the hill, subjects' motoric responses increased along with the increase in verbal reports. These results suggest two different memorial influences on action. With a short delay at the hill, memory for visual guidance is separate from the explicit memory informing the conscious response. With short or long delays away from the hill, short-term visual guidance memory no longer persists, and both motor and verbal responses are driven by an explicit representation. These results support recent research involving visual guidance from memory, where actions become influenced by conscious awareness, and provide evidence for communication between the "what" and "how" visual processing systems.

A flexible method for the preparation of thin film samples for in situ TEM characterization combining shadow-FIB milling and electron-beam-assisted etching

Energy Technology Data Exchange (ETDEWEB)

Liebig, J.P., E-mail: jan.p.liebig@fau.de [Department of Materials Science and Engineering, Institute I, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr. 5, 91058 Erlangen (Germany); Göken, M. [Department of Materials Science and Engineering, Institute I, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr. 5, 91058 Erlangen (Germany); Richter, G. [Max Planck Institute for Intelligent Systems, Heisenbergstr. 3, 70569 Stuttgart (Germany); Mačković, M.; Przybilla, T.; Spiecker, E. [Institute of Micro, and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Cauerstr. 6, 91058 Erlangen (Germany); Pierron, O.N. [G. W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405 (United States); Merle, B. [Department of Materials Science and Engineering, Institute I, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstr. 5, 91058 Erlangen (Germany)

2016-12-15

A new method for the preparation of freestanding thin film samples for mechanical testing in transmission electron microscopes is presented. It is based on a combination of focused ion beam (FIB) milling and electron-beam-assisted etching with xenon difluoride (XeF{sub 2}) precursor gas. The use of the FIB allows for the target preparation of microstructural defects and enables well-defined sample geometries which can be easily adapted in order to meet the requirements of various testing setups. In contrast to existing FIB-based preparation approaches, the area of interest is never exposed to ion beam irradiation which preserves a pristine microstructure. The method can be applied to a wide range of thin film material systems compatible with XeF{sub 2} etching. Its feasibility is demonstrated for gold and alloyed copper thin films and its practical application is discussed. - Highlights: • A new method for the preparation of sub-micron tensile specimens from thin films is presented. • The method is based on the combination of focused ion beam milling and electron-beam-assisted xenon difluoride etching. • It enables the target preparation of individual microstructural defects. • The sample section is protected from ion beam damage by the use of a shadow milling geometry.

Etch pit investigation of free electron concentration controlled 4H-SiC

Science.gov (United States)

Kim, Hong-Yeol; Shin, Yun Ji; Kim, Jung Gon; Harima, Hiroshi; Kim, Jihyun; Bahng, Wook

2013-04-01

Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm-2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

Attenuation-corrected radionuclide differential glomerular filtration: Using a bilateral slant hole collimator for determining depth of kidneys

International Nuclear Information System (INIS)

Lasher, J.C.; Kopp, D.T.; Lancaster, J.L.; Blumhardt, R.

1986-01-01

There has recently been considerable interest in measuring differential renal function utilizing radionuclide attenuation correction techniques. One popular method is that of estimating kidney depth from the patient's weight-to-height ratio. A recent publication showed that renal depth can also be accurately determined using measurements from lateral views of each kidney. The authors have developed a third radionculide method using a bilateral slant-hole collimator (SHC) that is capable of obtaining the depth of both kidneys without repositioning the camera. This method makes use of the fact that two unique projections of each kidney are simultaneously acquired along spatial angles. The depth of each kidney used in the attenuation correction calculation can be easily obtained trigometrically using this known angle and the distance of the collimator from the patient

Effects of hard mask etch on final topography of advanced phase shift masks

Science.gov (United States)

Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

2017-07-01

Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

Electrochemical etching amplification of low-let recoil particle tracks in polymers for fast neutron dosimetry

International Nuclear Information System (INIS)

Sohrabi, M.; Morgan, K.Z.

1975-11-01

An electrochemical etching method for the amplification of fast-neutron-induced recoil particle tracks in polymers was investigated. The technique gave superior results over those obtained by conventional etching methods especially when polycarbonate foils were used for recoil particle track amplification. Electrochemical etching systems capable of multi-foil processing were designed and constructed to demonstrate the feasibility of the techniques for large-scale neutron dosimetry. Electrochemical etching parameters were studied including the nature or type of the polymer foil used, foil thickness and its effect on etching time, the applied voltage and its frequency, the chemical composition, concentration, and temperature of the etchant, distance and angle between the electrodes, and the type of particles such as recoil particles including protons. Recoil particle track density, mean track diameter, and optical density as functions of the mentioned parameters were determined. Each parameter was found to have a distinct effect on the etching results in terms of the measured responses. Several new characteristics of this fast neutron dosimetry method were studied especially for personnel dosimetry using various radiation sources such as nuclear reactors, medical cyclotrons, and isotopic neutron sources. The dose range, neutron energy dependence, directional response, fading characteristics, neutron threshold energy, etc. were investigated

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

Science.gov (United States)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

A numerical model for etching through a circular hole

International Nuclear Information System (INIS)

Rath, P; Chai, J C; Zheng, H; Lam, Y C; Murukeshan, V M

2006-01-01

A numerical model based on the total concentration of etchant is proposed to model the wet chemical etching through a circular hole. The reaction at the etchant-substrate interface is assumed to be infinitely fast i.e. etching is controlled by the diffusion of etchant to the interface. The proposed model is based on a fixed-grid approach analogous to the enthalpy method. The total concentration of etchant is the sum of the unreacted etchant concentration and the reacted etchant concentration. The reacted concentration of etchant is a measure of the etchfront position during etching. The governing mass diffusion equation based on the total concentration of etchant includes the interface condition. The etchfront position is found implicitly using the proposed approach. The computational domain is fixed, which includes the whole etchant and substrate domain including the mask region. For demonstration purposes, the finite volume method is used to solve the governing mass diffusion equation with prescribed initial and boundary conditions. The effect of mask thickness and initial etchant concentration on the shape evolution of etchfront is studied

Bio-inspired silicon nanospikes fabricated by metal-assisted chemical etching for antibacterial surfaces

Science.gov (United States)

Hu, Huan; Siu, Vince S.; Gifford, Stacey M.; Kim, Sungcheol; Lu, Minhua; Meyer, Pablo; Stolovitzky, Gustavo A.

2017-12-01

The recently discovered bactericidal properties of nanostructures on wings of insects such as cicadas and dragonflies have inspired the development of similar nanostructured surfaces for antibacterial applications. Since most antibacterial applications require nanostructures covering a considerable amount of area, a practical fabrication method needs to be cost-effective and scalable. However, most reported nanofabrication methods require either expensive equipment or a high temperature process, limiting cost efficiency and scalability. Here, we report a simple, fast, low-cost, and scalable antibacterial surface nanofabrication methodology. Our method is based on metal-assisted chemical etching that only requires etching a single crystal silicon substrate in a mixture of silver nitrate and hydrofluoric acid for several minutes. We experimentally studied the effects of etching time on the morphology of the silicon nanospikes and the bactericidal properties of the resulting surface. We discovered that 6 minutes of etching results in a surface containing silicon nanospikes with optimal geometry. The bactericidal properties of the silicon nanospikes were supported by bacterial plating results, fluorescence images, and scanning electron microscopy images.

The chemical and electrochemical anisotropic etching of silicon

International Nuclear Information System (INIS)

Dixon, E.

1997-06-01

The success of silicon IC technology in producing a wide variety of microstructures relies heavily on the orientation dependant etching observed for silicon in alkaline media. Despite the rapid growth of this industry, the chemical and electrochemical mechanisms by which anisotropic etching occurs remain poorly understood. The most common etchant systems in use are ethylenediamine-pyrocatechol-water (EPW) and potassium hydroxide-isopropanol-water (KOH-IPA), and whilst these systems are highly plane selective they each have distinct disadvantages. The occurrence of inhomogeneities such as micropyramids and pits on the surface of etched substrates is a particularly disadvantageous characteristic of many alkaline etching systems. A complete understanding of the chemical and electrochemical anisotropic etching mechanisms is essential in order to obtain more reproducible etching, improved etch rate ratios and the development of more reliable etching baths. Wet chemical etching experiments to evaluate the etching rates for the different alkali metal cations have shown that similar etch rates are observed for LiOH, NaOH and KOH but those of RbOH and CsOH are significantly lower. The presence of impurities was shown to worsen the etched wafer's surface finish obtained in these etching baths. Additives have been shown to dramatically improve the surface finish with the presence of IPA in conjunction with etchant oxygenation virtually eliminating all surface defects. Electrochemical experiments were used to assess the electrochemical behaviour of Si p-(100) in of a wide variety of etchants and variations were seen according to the etchant used. A.C impedance spectroscopy showed a variation in the flat-band potential (V FB ) according to alkali metal hydroxide etchant used. These trends were similarly observed in the presence of isopropanol. Oxygenation was observed to reproducibly alter the flat-band potentials. A.c impedance spectroscopic studies additionally confirmed the

Plasma etching of niobium-SiO/sub x/ layers

International Nuclear Information System (INIS)

Schelle, D.; Tiller, H.J.

1986-01-01

CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

Science.gov (United States)

Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

2000-07-01

In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

Thermal history-based etching

Science.gov (United States)

Simpson, John T.

2017-11-28

A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

KAUST Repository

Najar, Adel; Anjum, Dalaver H.; Hedhili, Mohamed N.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed; Sougrat, Rachid

2012-01-01

We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been

Selective photochemical dry etching of compound semiconductors

International Nuclear Information System (INIS)

Ashby, C.I.H.

1988-01-01

When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

In-situ photoluminescence imaging for passivation-layer etching process control for photovoltaics

Science.gov (United States)

Lee, J. Z.; Michaelson, L.; Munoz, K.; Tyson, T.; Gallegos, A.; Sullivan, J. T.; Buonassisi, T.

2014-07-01

Light-induced plating (LIP) of solar-cell metal contacts is a scalable alternative to silver paste. However, LIP requires an additional patterning step to create openings in the silicon nitride (SiNx) antireflection coating (ARC) layer prior to metallization. One approach to pattern the SiNx is masking and wet chemical etching. In-situ real-time photoluminescence imaging (PLI) is demonstrated as a process-monitoring method to determine when SiNx has been fully removed during etching. We demonstrate that the change in PLI signal intensity during etching is caused by a combination of (1) decreasing light absorption from the reduction in SiNx ARC layer thickness and (2) decreasing surface lifetime as the SiNx/Si interface transitions to an etch-solution/Si. Using in-situ PLI to guide the etching process, we demonstrate a full-area plated single-crystalline silicon device. In-situ PLI has the potential to be integrated into a commercial processing line to improve process control and reliability.

Simulation of the evolution of fused silica's surface defect during wet chemical etching

Science.gov (United States)

Liu, Taixiang; Yang, Ke; Li, Heyang; Yan, Lianghong; Yuan, Xiaodong; Yan, Hongwei

2017-08-01

Large high-power-laser facility is the basis for achieving inertial confinement fusion, one of whose missions is to make fusion energy usable in the near future. In the facility, fused silica optics plays an irreplaceable role to conduct extremely high-intensity laser to fusion capsule. But the surface defect of fused silica is a major obstacle limiting the output power of the large laser facility and likely resulting in the failure of ignition. To mitigate, or event to remove the surface defect, wet chemical etching has been developed as a practical way. However, how the surface defect evolves during wet chemical etching is still not clearly known so far. To address this problem, in this work, the three-dimensional model of surface defect is built and finite difference time domain (FDTD) method is developed to simulate the evolution of surface defect during etching. From the simulation, it is found that the surface defect will get smooth and result in the improvement of surface quality of fused silica after etching. Comparatively, surface defects (e.g. micro-crack, scratch, series of pinholes, etc.) of a typical fused silica at different etching time are experimentally measured. It can be seen that the simulation result agrees well with the result of experiment, indicating the FDTD method is valid for investigating the evolution of surface defect during etching. With the finding of FDTD simulation, one can optimize the treatment process of fused silica in practical etching or even to make the initial characterization of surface defect traceable.

Liquid droplet sensing using twisted optical fiber couplers fabricated by hydrofluoric acid flow etching

Science.gov (United States)

Son, Gyeongho; Jung, Youngho; Yu, Kyoungsik

2017-04-01

We report a directional-coupler-based refractive index sensor and its cost-effective fabrication method using hydrofluoric acid droplet wet-etching and surface-tension-driven liquid flows. The proposed fiber sensor consists of a pair of twisted tapered optical fibers with low excess losses. The fiber cores in the etched microfiber region are exposed to the surrounding medium for efficient interaction with the guided light. We observe that the etching-based low-loss fiber-optic sensors can measure the water droplet volume by detecting the refractive index changes of the surrounding medium around the etched fiber core region.

Etching of semiconductor cubic crystals: Determination of the dissolution slowness surfaces

Science.gov (United States)

Tellier, C. R.

1990-03-01

Equations of the representative surface of dissolution slowness for cubic crystals are determined in the framework of a tensorial approach of the orientation-dependent etching process. The independent dissolution constants are deduced from symmetry considerations. Using previous data on the chemical etching of germanium and gallium arsenide crystals, some possible polar diagrams of the dissolution slowness are proposed. A numerical and graphical simulation method is used to obtain the derived dissolution shapes. The influence of extrema in the dissolution slowness on the successive dissolution shapes is also examined. A graphical construction of limiting shapes of etched crystals appears possible using the tensorial representation of the dissolution slowness.

Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching

International Nuclear Information System (INIS)

Liu Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Tittonen, Ilkka; Grigoras, Kestutis

2013-01-01

A novel aluminum oxide (Al 2 O 3 ) hard mask fabrication process with nanoscale resolution is introduced. The Al 2 O 3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al 2 O 3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga + ) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al 2 O 3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga + FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al 2 O 3 mask protects the underlying silicon from Ga + ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated. (paper)

Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion.

Directory of Open Access Journals (Sweden)

R Zahran

Full Text Available Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5-7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time.

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

Science.gov (United States)

Evans, Laura J.; Beheim, Glenn M.

2006-01-01

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

Science.gov (United States)

Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

Optical diagnostics for plasma etching

NARCIS (Netherlands)

Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

1985-01-01

Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

Dry etching of thin chalcogenide films

Energy Technology Data Exchange (ETDEWEB)

Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

2010-04-01

Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

Measurement of the variable track-etch rate of hydrogen, carbon and oxygen Ions in CR-39

International Nuclear Information System (INIS)

Lengar, I.; Skvarc, J.; Ilic, R.

2003-01-01

The ratio of the track-etch rate to the bulk-etch rate for hydrogen, carbon and oxygen ions was studied for the CR-39 detector with addition of dioctylphthalate. The response was reconstructed from etch-pit growth curves obtained by the multi-step etching technique. A theoretical analysis of the correctness of the method due to the 'missing track segment' is assessed and utilisation of the results obtained for the calibration of fast neutron dosimetry is discussed. (author)

Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

Directory of Open Access Journals (Sweden)

Devanna Raghu

2008-01-01

Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

Bulk and track etching of PET studied by spectrophotometer

International Nuclear Information System (INIS)

Zhu, Z.Y.; Duan, J.L.; Maekawa, Y.; Koshikawa, H.; Yoshida, M.

2004-01-01

UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm -1 . Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

Crystallographic orientation study of silicon steels using X-ray diffraction, electrons diffraction and the Etch Pit method

International Nuclear Information System (INIS)

Santos, Hamilta de Oliveira

1999-01-01

The aim of the present study is the microstructural and crystallographic orientation of Fe-3%Si steel. The silicon steel shows good electrical properties and it is used in the nuclear and electrical power fields. The studied steel was supplied by Cia. Acos Especiais Itabira S/A - ACESITA. The material was received in the hot compressed condition, in one or two passes. The hot compressing temperatures used were 900, 1000 and 1100 deg C with soaking times ranging from 32 to 470 s. The material preferential crystallographic orientation was evaluated in every grain of the samples. The characterization techniques used were: scanning electron microscopy (SEM) using the etch pit method; X ray diffraction using the Laue back-reflection method; orientation imaging microscopy (OIM). Microstructural characterization in terms of grain size measurement and mean number of grains in the sample were also undertaken. The Laue method was found an easy technique to access crystallographic orientation of this work polycrystalline samples 2.5 mm average grain size. This was due to the inability to focus the X-rays on a single grain of the material. The scanning electron microscopy showed microcavities left by the etch pit method, which allowed the observation of the crystallographic orientation of each grain from the samples. No conclusive grain crystallographic orientation was possible to obtain by the OIM technique due to the non-existing rolling direction. A more extensive work with the OIM technique must be undertaken on the Fe-3%Si with oriented grains and non oriented grains. (author)

Structural and optical properties of vapor-etched porous GaAs

Energy Technology Data Exchange (ETDEWEB)

Smida, A.; Laatar, F. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M., E-mail: mhdhassen@yahoo.fr [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-08-15

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO{sub 3} as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

Structural and optical properties of vapor-etched porous GaAs

International Nuclear Information System (INIS)

Smida, A.; Laatar, F.; Hassen, M.; Ezzaouia, H.

2016-01-01

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

Science.gov (United States)

Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

2012-01-01

Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

Atomic layer deposition and etching methods for far ultraviolet aluminum mirrors

Science.gov (United States)

Hennessy, John; Moore, Christopher S.; Balasubramanian, Kunjithapatham; Jewell, April D.; Carter, Christian; France, Kevin; Nikzad, Shouleh

2017-09-01

High-performance aluminum mirrors at far ultraviolet wavelengths require transparent dielectric materials as protective coatings to prevent oxidation. Reducing the thickness of this protective layer can result in additional performance gains by minimizing absorption losses, and provides a path toward high Al reflectance in the challenging wavelength range of 90 to 110 nm. We have pursued the development of new atomic layer deposition processes (ALD) for the metal fluoride materials of MgF2, AlF3 and LiF. Using anhydrous hydrogen fluoride as a reactant, these films can be deposited at the low temperatures required for large-area surface-finished optics and polymeric diffraction gratings. We also report on the development and application of an atomic layer etching (ALE) procedure to controllably etch native aluminum oxide. Our ALE process utilizes the same chemistry used in the ALD of AlF3 thin films, allowing for a combination of high-performance evaporated Al layers and ultrathin ALD encapsulation without requiring vacuum transfer. Progress in demonstrating the scalability of this approach, as well as the environmental stability of ALD/ALE Al mirrors are discussed in the context of possible future applications for NASA LUVOIR and HabEx mission concepts.

Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

Science.gov (United States)

Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

2014-07-14

We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

Comparison of results of medial rectus muscle recession using augmentation, Faden procedure, and slanted recession in the treatment of high accommodative convergence/accommodation ratio esotropia.

Science.gov (United States)

Gharabaghi, Davoud; Zanjani, Leila Kazemi

2006-01-01

According to the literature, accommodative esotropia has an unpredictable course when nonsurgical treatment is considered, especially in cases with a high accommodative convergence/accommodation ratio (AC/A). The aim of this study was to compare the results of augmented recession, slanted recession, and recession with posterior fixation suture of the medial rectus muscles in the treatment of high AC/A esotropia. Twenty-eight children (4 to 14 years old) with high AC/A esotropia with a near-distance disparity greater than 10 PD were included in a prospective, randomized, blinded clinical trial. Nine children underwent recession of both medial rectus muscles and posterior fixation suture (Faden procedure), 9 children underwent augmented recession of the medial rectus muscles, and 10 children underwent slanted recession of both medial rectus muscles. The amount of esodeviation was measured before strabismus surgery and at least 6 months postoperatively. In the augmented recession group, the mean near-distance disparity was reduced from 16.33 +/- 2.17 PD preoperatively to 7.55 +/- 3.87 PD postoperatively (54.21%; P = .056). In the Faden procedure group, it was reduced from 15.22 +/- 4.08 PD to 2.55 +/- 4.03 PD (80.7%; P = .056). In the slanted recession group, it was reduced from 15.50 +/- 4.30 PD to 4.10 +/- 4.80 PD (67.55%; P = .056). The Faden procedure had the best outcome, but slanted recession also was successful. Because of our good results and an easy, non-invasive approach without any additional complications, we recommend slanted recession to treat high AC/A esotropia.

Dry etching technologies for the advanced binary film

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

Science.gov (United States)

Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

2010-06-01

In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

Photothermal Microneedle Etching: Improved Three-Dimensional Microfabrication Method for Agarose Gel for Topographical Control of Cultured Cell Communities

Science.gov (United States)

Moriguchi, Hiroyuki; Yasuda, Kenji

2006-08-01

We have developed a new three-dimensional (3D) microfabrication method for agarose gel, photothermal microneedle etching (PTMNE), by means of an improved photothermal spot heating using a focused 1064 nm laser beam for melting a portion of the agarose layer at the tip of the microneedle, where a photoabsorbent chromium layer is coated to be heated. The advantage of this method is that it allows the 3D control of the melting topography within the thick agarose layer with a 2 μm resolution, whereas conventional photothermal etching can enable only two-dimensional (2D) control on the surface of the chip. By this method, we can form the spheroid clusters of particular cells from isolated single cells without any physical contact with other cells in other chambers, which is important for measuring the community effect of the cell group from isolated single cells. When we set single cancer cells in microchambers of 100 μm in diameter, formed in a 50-μm-thick agarose layer, we observed that they grew, divided, and formed spheroid clusters of cells in each microchamber. The result indicates the potential of this method to be a fundamental technique in the research of multicellular spherical clusters of cells for checking the community effect of cells in 3D structures, such as the permeabilities of chemicals and substrates into the cluster, which is complementary to conventional 2D dish cultivation and can contribute to the cell-based screening of drugs.

Reactive ion etching of microphotonic structures

International Nuclear Information System (INIS)

Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

2004-01-01

Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

Influence of Etching Mode on Enamel Bond Durability of Universal Adhesive Systems.

Science.gov (United States)

Suzuki, T; Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Endo, H; Erickson, R L; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to determine the enamel bond durability of three universal adhesives in different etching modes through fatigue testing. The three universal adhesives used were Scotchbond Universal, Prime&Bond Elect universal dental adhesive, and All-Bond Universal light-cured dental adhesive. A single-step self-etch adhesive, Clearfil S 3 Bond Plus was used as a control. The shear bond strength (SBS) and shear fatigue strength (SFS) to human enamel were evaluated in total-etch mode and self-etch mode. A stainless steel metal ring with an internal diameter of 2.4 mm was used to bond the resin composite to the flat-ground (4000-grit) tooth surfaces for determination of both SBS and SFS. For each enamel surface treatment, 15 specimens were prepared for SBS and 30 specimens for SFS. The staircase method for fatigue testing was then used to determine the SFS of the resin composite bonded to the enamel using 10-Hz frequencies for 50,000 cycles or until failure occurred. Scanning electron microscopy was used to observe representative debonded specimen surfaces and the resin-enamel interfaces. A two-way analysis of variance and the Tukey post hoc test were used for analysis of the SBS data, whereas a modified t-test with Bonferroni correction was used for the SFS data. All adhesives in total-etch mode showed significantly higher SBS and SFS values than those in self-etch mode. Although All-Bond Universal in self-etch mode showed a significantly lower SBS value than the other adhesives, there was no significant difference in SFS values among the adhesives in this mode. All adhesives showed higher SFS:SBS ratios in total-etch mode than in self-etch mode. With regard to the adhesive systems used in this study, universal adhesives showed higher enamel bond strengths in total-etch mode. Although the influence of different etching modes on the enamel-bonding performance of universal adhesives was found to be dependent on the adhesive material, total-etch mode

A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

Science.gov (United States)

Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

2017-08-01

The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

Characterization of Vadose Zone Sediment: Slant Borehole SX-108 in the S-SX Waste Management Area

International Nuclear Information System (INIS)

Serne, R. Jeffrey; Last, George V.; Schaef, Herbert T.; Lanigan, David C.; Lindenmeier, Clark W.; Ainsworth, Calvin C.; Clayton, Ray E.; Legore, Virginia L.; O'Hara, Matthew J.; Brown, Christopher F.; Orr, Robert D.; Kutnyakov, Igor V.; Wilson, Teresa C.; Wagnon, Kenneth B.; Williams, Bruce A.; Burke, Deborah S.

2008-01-01

This report was revised in September 2008 to remove acid-extractable sodium data from Table 4.17. The sodium data was removed due to potential contamination introduced during the acid extraction process. The rest of the text remains unchanged from the original report issued in February 2002. The overall goal of the of the Tank Farm Vadose Zone Project, led by CH2M HILL Hanford Group, Inc., is to define risks from past and future single-shell tank farm activities. To meet this goal, CH2M HILL Hanford Group, Inc., asked scientists from Pacific Northwest National Laboratory to perform detailed analyses on vadose zone sediment from within the S-SX Waste Management Area. This report is the fourth in a series of four reports to present the results of these analyses. Specifically, this report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from a slant borehole installed beneath tank SX-108 (or simply SX-108 slant borehole)

Characterization of Vadose Zone Sediment: Slant Borehole SX-108 in the S-SX Waste Management Area

Energy Technology Data Exchange (ETDEWEB)

Serne, R. Jeffrey; Last, George V.; Schaef, Herbert T.; Lanigan, David C.; Lindenmeier, Clark W.; Ainsworth, Calvin C.; Clayton, Ray E.; Legore, Virginia L.; O' Hara, Matthew J.; Brown, Christopher F.; Orr, Robert D.; Kutnyakov, Igor V.; Wilson, Teresa C.; Wagnon, Kenneth B.; Williams, Bruce A.; Burke, Deborah S.

2008-09-11

This report was revised in September 2008 to remove acid-extractable sodium data from Table 4.17. The sodium data was removed due to potential contamination introduced during the acid extraction process. The rest of the text remains unchanged from the original report issued in February 2002. The overall goal of the of the Tank Farm Vadose Zone Project, led by CH2M HILL Hanford Group, Inc., is to define risks from past and future single-shell tank farm activities. To meet this goal, CH2M HILL Hanford Group, Inc., asked scientists from Pacific Northwest National Laboratory to perform detailed analyses on vadose zone sediment from within the S-SX Waste Management Area. This report is the fourth in a series of four reports to present the results of these analyses. Specifically, this report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from a slant borehole installed beneath tank SX-108 (or simply SX-108 slant borehole).

SU-8 etching in inductively coupled oxygen plasma

DEFF Research Database (Denmark)

Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

2013-01-01

Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

Marginal microleakage of cervical composite resin restorations bonded using etch-and-rinse and self-etch adhesives: two dimensional vs. three dimensional methods

Directory of Open Access Journals (Sweden)

Maryam Khoroushi

2016-05-01

Full Text Available Objectives This study was evaluated the marginal microleakage of two different adhesive systems before and after aging with two different dye penetration techniques. Materials and Methods Class V cavities were prepared on the buccal and lingual surfaces of 48 human molars. Clearfil SE Bond and Single Bond (self-etching and etch-and-rinse systems, respectively were applied, each to half of the prepared cavities, which were restored with composite resin. Half of the specimens in each group underwent 10,000 cycles of thermocycling. Microleakage was evaluated using two dimensional (2D and three dimensional (3D dye penetration techniques separately for each half of each specimen. Data were analyzed with SPSS 11.5 (SPSS Inc., using the Kruskal-Wallis and Mann-Whitney U tests (α = 0.05. Results The difference between the 2D and 3D microleakage evaluation techniques was significant at the occlusal margins of Single bond groups (p = 0.002. The differences between 2D and 3D microleakage evaluation techniques were significant at both the occlusal and cervical margins of Clearfil SE Bond groups (p = 0.017 and p = 0.002, respectively. The difference between the 2D and 3D techniques was significant at the occlusal margins of non-aged groups (p = 0.003. The difference between these two techniques was significant at the occlusal margins of the aged groups (p = 0.001. The Mann-Whitney test showed significant differences between the two techniques only at the occlusal margins in all specimens. Conclusions Under the limitations of the present study, it can be concluded that the 3D technique has the capacity to detect occlusal microleakage more precisely than the 2D technique.

Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

International Nuclear Information System (INIS)

Riedel, Nicholas A.; Smith, Barbara S.; Williams, John D.; Popat, Ketul C.

2012-01-01

Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO 2 peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: ►Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. ►Oxygen etched substrates showed fewer adhered platelets. ►Platelet activation was reduced by the improved oxide surface. ►Oxygen etched substrates exhibited increased whole blood clotting times. ►Although clotting reductions were seen, protein adsorption remained similar.

Proportion quantitative analysis and etching of {110} planes on tungsten single crystal coating surface

Energy Technology Data Exchange (ETDEWEB)

Mu, Rende, E-mail: dallasbiam@163.com [Beijing Institute of Aeronautical Materials, Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Department 5, P.O. Box 81-5, Beijing 100095 (China); Tan, Chengwen; Yu, Xiaodong [School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China)

2016-05-05

Tungsten single crystal and poly crystal were treated by electrolytic etching in a 3% by weight solution of NaOH in distilled water. The method for determining the proportion of {110} planes and characteristic morphology on the coating surface after electrolytic etching were investigated using EBSD and auto-focusing microscope. Then the optimization of process parameters for electrolytic etching is achieved. In order to compare the effect of process parameters, three process parameters were selected for the tungsten single crystal electrolytic etching. Through analyzing the change of {110} planes' proportion, we found that when the coatings are etched with 1.4 amp/cm{sup 2} and 3 min, {110} planes can be exposed in the greatest degree that can reach 61.4% on tubular surfaces. The proposed approach greatly improves the proportion of {110} planes relative to the original surface. - Highlights: • Tungsten single/poly crystals treated by electrolytic etching in solution of NaOH. • The {110} planes have the lower surface free energy than {112}. • Some {112} planes etched firstly, the {110} planes exposed at last during etching. • {110} planes exposed to the greatest extent with 1.4 amp/cm{sup 2} and 3 min.

Large area synthesis, characterization, and anisotropic etching of two dimensional tungsten disulfide films

International Nuclear Information System (INIS)

Mutlu, Zafer; Ozkan, Mihrimah; Ozkan, Cengiz S.

2016-01-01

Emergent properties of tungsten disulfide at the quantum confinement limit hold promise for electronic and optoelectronic applications. Here we report on the large area synthesis of atomically thin tungsten disulfide films with strong photoluminescence properties via sulfurization of the pre-deposited tungsten films. Detailed characterization of the pre-deposited tungsten films and tungsten disulfide films are performed using microscopy and spectroscopy methods. By directly heating tungsten disulfide films in air, we have shown that the films tend to be etched into a series of triangular shaped pits with the same orientations, revealing the anisotropic etching behavior of tungsten disulfide edges. Moreover, the dimensions of the triangular pits increase with the number of layers, suggesting a thickness dependent behavior of etching in tungsten disulfide films. This method offers a promising new avenue for engineering the edge structures of tungsten disulfide films. - Highlights: • Large-scale synthesis of WS_2 films is achieved via sulfurization of W films. • Annealing of W films leads to a substantial improvement in the quality of WS_2 films. • WS_2 films show laser power dependent photoluminescence characteristics. • WS_2 films are etched with well-oriented triangular pits upon annealing in air. • Anisotropic oxidative etching is greatly affected by the thickness of WS_2 films.

Bend measurement using an etched fiber incorporating a fiber Bragg grating.

Science.gov (United States)

Rauf, Abdul; Zhao, Jianlin; Jiang, Biqiang; Jiang, Yajun; Jiang, Wei

2013-01-15

A fiber Bragg grating (FBG) based bend measurement method using an etched fiber is proposed that utilizes the coupling of the core mode to the cladding and radiation modes at the bending region. An etching region of 99 µm diameter that serves as bend sensing head is achieved at 10 mm upstream the FBG through processing in 40% hydrofluoric acid, while the FBG acts as a narrowband reflector to enhance the sensitivity. The power variation curves are obtained for a wide range of bend angles, but the performance is limited due to the presence of the loss peaks. The sensing response is improved by immersing the etching region in a refractive index matching gel. The results are analyzed by using curve fitting formulas and are in good agreement. A large dynamic range of -27° to +27° and sensitivity of 0.43 dBm/deg is achieved, which can be enhanced by reducing the etched diameter.

Fabrication of Capacitive Micromachined Ultrasonic Transducers Using a Boron Etch-Stop Method

DEFF Research Database (Denmark)

Diederichsen, Søren Elmin; Sandborg-Olsen, Filip; Engholm, Mathias

2016-01-01

wt% potassium hydroxide solution with isopropyl alcohol added to increase the etch selectivity to the highly doped boron layer. The resulting plate thickness uniformity is estimated from scanning electron micrographs to a mean value of 2.00μm±2.5%. The resonant frequency in air for a 1-D linear CMUT...

CONTRIBUTION OF DIFFERENT PARTICLES MEASURED WITH TRACK ETCHED DETECTORS ONBOARD ISS.

Science.gov (United States)

Ambrožová, I; Davídková, M; Brabcová, K Pachnerová; Tolochek, R V; Shurshakov, V A

2017-09-29

Cosmic radiation consists of primary high-energy galactic and solar particles. When passing through spacecraft walls and astronauts' bodies, the spectrum becomes even more complex due to generating of secondary particles through fragmentation and nuclear interactions. Total radiation exposure is contributed by both these components. With an advantage, space research uses track etched detectors from the group of passive detectors visualizing the tracks of particles, in this case by etching. The detectors can discriminate between various components of cosmic radiation. A method is introduced for the separation of the different types of particles according to their range using track etched detectors. The method is demonstrated using detectors placed in Russian segment of the International Space Station in 2009. It is shown that the primary high-energy heavy ions with long range contribute up to 56% of the absorbed dose and up to 50% to the dose equivalent. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Effect of argon ion etching on the magnetic properties of FeCoB films

Energy Technology Data Exchange (ETDEWEB)

Zhu, Junwei; Zhou, Kan; Yang, Yi; Tang, Dongming; Zhang, Baoshan, E-mail: malab@nju.edu.cn; Lu, Mu; Lu, Huaixian

2015-01-15

In this paper, a new method to modify Ta underlayers by an argon ion etching technology is introduced. Surface roughness of Ta underlayers, as well as soft magnetic properties of post-deposited FeCoB films can be improved by applying a proper ion etching process. The reduction of magnetic coercivity of FeCoB films deposited on the modified Ta underlayers is attributed to the improvement of interfacial roughness, which can reduce magnetic ripples in magnetic films. The microwave damping linewidth of magnetic films is also found to be related to the interfacial roughness. Ta underlayers modified by the ion etching can reduce the influence of two-magnon scattering effect, and thus tune microwave properties of magnetic films. All the results prove that argon ion etching is an effective way to tailor magnetic properties of magnetic films. - Highlights: • We believe that our method to tune the magnetic film properties will be interesting for general readers of Journal of Magnetism and Magnetic Materials. • In the paper, argon ion etching is applied to the Ta underlayer before the FeCoB film is deposited on it. • The modified interface roughness has effectively improved the magnetic properties, including the static magnetic and microwave performance. • The method is valuable for other underlayer/magnetic film systems.

Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

Energy Technology Data Exchange (ETDEWEB)

Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

2016-09-01

A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

International Nuclear Information System (INIS)

Grégoire, Geneviève; Sharrock, Patrick; Prigent, Yann

2016-01-01

A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

A spatial track formation model and its use for calculating etch-pit parameters of light nuclei

International Nuclear Information System (INIS)

Somogyi, G.; Scherzer, R.; Grabisch, K.; Enge, W.

1976-01-01

A generalized geometrical model of etch-pit formation in three dimensions is presented for nuclear particles entering isotropic solids at arbitrary angles of incidence. With this model one can calculate the relations between any particle parameter /Z = charge, M = mass, R = range, theta = angle of incidence/ and etching or track parameter /h = removed detector layer, L = track length, d = track diameter, etch-pit profile and contour/ for track etching rates varying monotonically along the trajectory of particles. Using a computer algorithm, calculations have been performed to study identification problems of nuclei of Z = 1-8 registered in a stack of polycarbonate sheets. For these calculations the etching rate ratio vs residual range curves were parametrized with a form of V -1 (R) = 1-Σasub(i) exp (- bsub(i)R) which does not involve the existence of a threshold for track registration. Particular attention was paid to the study of the evolution of etch-pit sizes for relatively high values of h. For this case, data are presented for the charge and isotope resolving power of the identification methods based on the relations L(R) of d(R). Calculations were also made to show the effect of the relative /parallel and opposite/ orientations between the directions of track etching and particle speed on etch-pit evolution. These studies offered new identification methods based on the determination of the curves L(parallel) vs L(opposite) and d(parallel) vs d(opposite), respectively. (orig.) [de

Modeling of the angular dependence of plasma etching

International Nuclear Information System (INIS)

Guo Wei; Sawin, Herbert H.

2009-01-01

An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Chemically etched fiber tips for near-field optical microscopy: a process for smoother tips.

Science.gov (United States)

Lambelet, P; Sayah, A; Pfeffer, M; Philipona, C; Marquis-Weible, F

1998-11-01

An improved method for producing fiber tips for scanning near-field optical microscopy is presented. The improvement consists of chemically etching quartz optical fibers through their acrylate jacket. This new method is compared with the previous one in which bare fibers were etched. With the new process the meniscus formed by the acid along the fiber does not move during etching, leading to a much smoother surface of the tip cone. Subsequent metallization is thus improved, resulting in better coverage of the tip with an aluminum opaque layer. Our results show that leakage can be avoided along the cone, and light transmission through the tip is spatially limited to an optical aperture of a 100-nm dimension.

Application of ray-traced tropospheric slant delays to geodetic VLBI analysis

Science.gov (United States)

Hofmeister, Armin; Böhm, Johannes

2017-08-01

The correction of tropospheric influences via so-called path delays is critical for the analysis of observations from space geodetic techniques like the very long baseline interferometry (VLBI). In standard VLBI analysis, the a priori slant path delays are determined using the concept of zenith delays, mapping functions and gradients. The a priori use of ray-traced delays, i.e., tropospheric slant path delays determined with the technique of ray-tracing through the meteorological data of numerical weather models (NWM), serves as an alternative way of correcting the influences of the troposphere on the VLBI observations within the analysis. In the presented research, the application of ray-traced delays to the VLBI analysis of sessions in a time span of 16.5 years is investigated. Ray-traced delays have been determined with program RADIATE (see Hofmeister in Ph.D. thesis, Department of Geodesy and Geophysics, Faculty of Mathematics and Geoinformation, Technische Universität Wien. http://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-3444, 2016) utilizing meteorological data provided by NWM of the European Centre for Medium-Range Weather Forecasts (ECMWF). In comparison with a standard VLBI analysis, which includes the tropospheric gradient estimation, the application of the ray-traced delays to an analysis, which uses the same parameterization except for the a priori slant path delay handling and the used wet mapping factors for the zenith wet delay (ZWD) estimation, improves the baseline length repeatability (BLR) at 55.9% of the baselines at sub-mm level. If no tropospheric gradients are estimated within the compared analyses, 90.6% of all baselines benefit from the application of the ray-traced delays, which leads to an average improvement of the BLR of 1 mm. The effects of the ray-traced delays on the terrestrial reference frame are also investigated. A separate assessment of the RADIATE ray-traced delays is carried out by comparison to the ray-traced delays from the

Effects of the Addictives on Etching Characteristics of Aluminum Foil

Energy Technology Data Exchange (ETDEWEB)

Kim, S.K.; Jang, J.M.; Chi, C.S. [Kookmin University, Seoul (Korea); Shin, D.C. [Sungnam Polytechnic, Sungnam (Korea); Lee, J.H.; Oh, H.J. [Hanseo University, Seosan (Korea)

2001-01-01

The effects of additives in the HCI etching solution on etching behaviors of aluminium foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to thoese in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only. (author). 21 refs., 10 figs.

Ion-beam etching of ramps in thin film heterostructures

International Nuclear Information System (INIS)

Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

2002-01-01

Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

Effect of Surface Treatment on Enamel Cracks After Orthodontic Bracket Debonding: Er,Cr:YSGG Laser-Etching Versus Acid-Etching

Science.gov (United States)

Ghaffari, Hassanali; Mirhashemi, Amirhossein; Baherimoghadam, Tahereh; Azmi, Amir

2017-01-01

Objectives: This study sought to compare enamel cracks after orthodontic bracket debonding in the surfaces prepared with erbium, chromium: yttrium-scandium-galliumgarnet (Er,Cr:YSGG) laser and the conventional acid-etching technique. Materials and Methods: This in-vitro experimental study was conducted on 60 sound human premolars extracted for orthodontic purposes. The teeth were randomly divided into two groups (n=30). The teeth in group A were etched with 37% phosphoric acid gel, while the teeth in group B were subjected to Er,Cr:YSGG laser irradiation (gold handpiece, MZ8 tip, 50Hz, 4.5W, 60μs, 80% water and 60% air). Orthodontic brackets were bonded to the enamel surfaces and were then debonded in both groups. The samples were inspected under a stereomicroscope at ×38 magnification to assess the number and length of enamel cracks before bonding and after debonding. Independent-samples t-test was used to compare the frequency of enamel cracks in the two groups. Levene’s test was applied to assess the equality of variances. Results: No significant difference was noted in the frequency or length of enamel cracks between the two groups after debonding (P>0.05). Conclusions: Despite the same results of the frequency and length of enamel cracks in the two groups and by considering the side effects of acid-etching (demineralization and formation of white spot lesions), Er,Cr:YSGG laser may be used as an alternative to acid-etching for enamel surface preparation prior to bracket bonding. PMID:29296111

Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

Science.gov (United States)

Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

2015-01-01

The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

Directional Etching of Silicon by Silver Nanostructures

Science.gov (United States)

Sharma, Pradeep; Wang, Yuh-Lin

2011-02-01

We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

Step voltage with periodic hold-up etching: A novel porous silicon formation

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.; Soukeih, M.

2007-01-01

A novel etching method for preparing light-emitting porous silicon (PS) is developed. A gradient steps (staircase) voltage is applied and hold-up for different periods of time between p-type silicon wafers and a graphite electrode in HF based solutions periodically. The single applied staircase voltage (0-30 V) is ramped in equal steps of 0.5 V for 6 s, and hold at 30 V for 30 s at a current of 6 mA. The current during hold-up time (0 V) was less than 10 μA. The room temperature photoluminescence (PL) behavior of the PS samples as a function of etching parameters has been investigated. The intensity of PL peak is initially increased and blue shifted on increasing etching time, but decreased after prolonged time. These are correlated with the study of changes in surface morphology using atomic force microscope (AFM), porosity and electrical conductance measurements. The time of holding-up the applied voltage during the formation process is found to highly affect the PS properties. On increasing the holding-up time, the intensity of PL peak is increased and blue shifted. The contribution of holding-up the applied steps during the formation process of PS is seen to be more or less similar to the post chemical etching process. It is demonstrated that this method can yield a porous silicon layer with stronger photoluminescence intensity and blue shifted than the porous silicon layer prepared by DC etching

Step voltage with periodic hold-up etching: A novel porous silicon formation

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M. [Department of Physics, Atomic Energy Commission of Syria (AECS), Damascus P.O. Box 6091 (Syrian Arab Republic)]. E-mail: scientific@aec.org.sy; Awad, F. [Department of Physics, Atomic Energy Commission of Syria (AECS), Damascus P.O. Box 6091 (Syrian Arab Republic); Soukeih, M. [Department of Physics, Atomic Energy Commission of Syria (AECS), Damascus P.O. Box 6091 (Syrian Arab Republic)

2007-05-16

A novel etching method for preparing light-emitting porous silicon (PS) is developed. A gradient steps (staircase) voltage is applied and hold-up for different periods of time between p-type silicon wafers and a graphite electrode in HF based solutions periodically. The single applied staircase voltage (0-30 V) is ramped in equal steps of 0.5 V for 6 s, and hold at 30 V for 30 s at a current of 6 mA. The current during hold-up time (0 V) was less than 10 {mu}A. The room temperature photoluminescence (PL) behavior of the PS samples as a function of etching parameters has been investigated. The intensity of PL peak is initially increased and blue shifted on increasing etching time, but decreased after prolonged time. These are correlated with the study of changes in surface morphology using atomic force microscope (AFM), porosity and electrical conductance measurements. The time of holding-up the applied voltage during the formation process is found to highly affect the PS properties. On increasing the holding-up time, the intensity of PL peak is increased and blue shifted. The contribution of holding-up the applied steps during the formation process of PS is seen to be more or less similar to the post chemical etching process. It is demonstrated that this method can yield a porous silicon layer with stronger photoluminescence intensity and blue shifted than the porous silicon layer prepared by DC etching.

Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

International Nuclear Information System (INIS)

Min, Zhong; Zhi-Tang, Song; Bo, Liu; Song-Lin, Feng; Bomy, Chen

2008-01-01

In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge 2 Sb 2 Te 5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge 2 Sb 2 Te 5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, current-voltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1mA to 0.025mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method

Influence of hydrostatic pulpal pressure on the microtensile bond strength of all-in-one self-etching adhesives

OpenAIRE

Hosaka, K; Nakajima, M; Monticelli, F; Carrilho, M; Yamauti, M; Aksornmuang, J; Nishitani, Y; Tayh, FR; Pashley, DH; Tagami, J

2007-01-01

Purpose: To evaluate the microtensile bond strength (mu TBS) of two all-in-one self-etching adhesive systems and two self etching adhesives with and without simulated hydrostatic pulpal pressure (PP). Materials and Methods: Flat coronal dentin surfaces of extracted human molars were prepared. Two all-in-one self-etching adhesive systems, One-Up Bond F (OBF; Tokuyama) and Clearfil S-3 Bond (Tri-S, Kuraray Medical) and two self-etching primer adhesives, Clearfil Protect Bond (PB; Kuraray) and C...

Optimization of silver-assisted nano-pillar etching process in silicon

Science.gov (United States)

Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

2015-12-01

In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

The effect of plasma etching on the surface topography of niobium superconducting radio frequency cavities

Science.gov (United States)

Radjenović, B.; Radmilović-Radjenović, M.

2014-11-01

In this letter the evolution of the surface topography of a niobium superconducting radio frequency cavity caused by different plasma etching modes (isotropic and anisotropic) is studied by the three-dimensional level set method. The initial rough surface is generated starting from an experimental power spectral density. The time dependence of the rms roughness is analyzed and the growth exponential factors β are determined for two etching modes (isotropic and anisotropic) assuming that isotropic etching is a much more effective mechanism of smoothing. The obtained simulation results could be useful for optimizing the parameters of the etching processes needed to obtain high quality niobium surfaces for superconducting radio frequency cavities.

Influence of laboratory degradation methods and bonding application parameters on microTBS of self-etch adhesives to dentin.

Science.gov (United States)

Erhardt, Maria Carolina G; Pisani-Proença, Jatyr; Osorio, Estrella; Aguilera, Fátima S; Toledano, Manuel; Osorio, Raquel

2011-04-01

To evaluate the laboratory resistance to degradation and the use of different bonding treatments on resin-dentin bonds formed with three self-etching adhesive systems. Flat, mid-coronal dentin surfaces from extracted human molars were bonded according to manufacturer's directions and submitted to two challenging regimens: (A) chemical degradation with 10% NaOC1 immersion for 5 hours; and (B) fatigue loading at 90 N using 50,000 cycles at 3.0 Hz. Additional dentin surfaces were bonded following four different bonding application protocols: (1) according to manufacturer's directions; (2) acid-etched with 36% phosphoric acid (H3PO4) for 15 seconds; (3) 10% sodium hypochlorite (NaOClaq) treated for 2 minutes, after H3PO4-etching; and (4) doubling the application time of the adhesives. Two one-step self-etch adhesives (an acetone-based: Futurabond/FUT and an ethanol-based: Futurabond NR/FNR) and a two-step self-etch primer system (Clearfil SE Bond/CSE) were examined. Specimens were sectioned into beams and tested for microtensile bond strength (microTBS). Selected debonded specimens were observed under scanning electron microscopy (SEM). Data (MPa) were analyzed by ANOVA and multiple comparisons tests (alpha= 0.05). microTBS significantly decreased after chemical and mechanical challenges (Padhesive systems, regardless the bonding protocol. FUT attained the highest microTBS after doubling the application time. H3PO4 and H3PO4 + NaOCl pretreatments significantly decreased bonding efficacy of the adhesives.

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

Science.gov (United States)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

DEFF Research Database (Denmark)

Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

2013-01-01

We present an efficient method to design apodized grating couplers with Gaussian output profiles for efficient coupling between standard single mode fibers and silicon chips. An apodized grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform is designed......, and fabricated in a single step of lithography and etching. An ultralow coupling loss of x2212;1.74x2009;x2009;dB (67% coupling efficiency) with a 3xA0;dB bandwidth of 60xA0;nm is experimentally measured....

Study on active faults in the Izu Peninsula using α track etch method

International Nuclear Information System (INIS)

Katoh, K.; Ikeda, K.; Takahashi, M.; Nagata, S.; Yanagihara, C.

1981-01-01

The α track etch method, which is one of the geochemical survey methods for the mapping and detection of active faults and the evaluation of their activities, has been applied to ten sites for the purpose of the earthquake prediction research program. The method conventionally measures relative radon concentration in the soil gas by counting the number of tracks per cm 2 .day on a small piece of plastic film (cellulose nitrate) which is sensitive to α-ray radiation. As the result of the track measurement on many survey lines crossing ten active faults including earthquake faults in the Izu Peninsula, the following was clarified: 1. The peak of track number appears mostly on fault lines but sometimes shifts from it. The line connecting peaks on the several survey lines corresponds to the strike of fault. 2. Relative position between the peak and the fault line on the surface suggests the type of fault, normal or reverse. 3. The track number observed on thin Quaternary strata is generally larger than that on thick Quaternary strata at an active fault concerned. This fact shows that the rising time of radon gas is controlled by the thickness of covering strata. (author)

Optimization of silver-assisted nano-pillar etching process in silicon

International Nuclear Information System (INIS)

Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

2015-01-01

Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert ® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H 2 O 2 ), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H 2 O 2 concentration and etching time. The predicted model is in good agreement with the experimental data where R 2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time

Optimization of silver-assisted nano-pillar etching process in silicon

Energy Technology Data Exchange (ETDEWEB)

Azhari, Ayu Wazira, E-mail: ayuwazira@unimap.edu.my [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); School of Environmental Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); Desa, Mohd Khairunaz Mat [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, 14300 (Malaysia); Zaidi, Saleem H. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia)

2015-12-01

Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert{sup ®} software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H{sub 2}O{sub 2}), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H{sub 2}O{sub 2} concentration and etching time. The predicted model is in good agreement with the experimental data where R{sup 2} is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant

A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

International Nuclear Information System (INIS)

Roozeboom, F; Kniknie, B; Lankhorst, A M; Winands, G; Knaapen, R; Smets, M; Poodt, P; Dingemans, G; Keuning, W; Kessels, W M M

2012-01-01

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF 6 to form gaseous SiF x etch products, and 2) passivation with C 4 F 8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatially-divided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing 'curtains' of heights down to ∼20 μm. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C 4 F 8 passivation steps by ALD-based oxide (e.g. SiO 2 ) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.

The influence of the laser spot size and the pulse number on laser-induced backside wet etching

International Nuclear Information System (INIS)

Boehme, R.; Zimmer, K.

2005-01-01

The laser-induced backside wet etching (LIBWE) of transparent solids at the interface to absorbing liquid is a new promising method for laser microstructuring. The influence of the laser spot size and the applied pulse number to the etch rate were investigated in detail for fused silica and two different liquids. Additional to the significant rise of the etch rate with increasing spot size considerable incubation effects have been observed at low laser fluences and pulse numbers. Based on the bubble formation during LIBWE processing, a relation between the bubble collapse time and the etch rate was ascertained. This relation fits the etch rate dependence on the spot size well. It is assumed that the deposition of decomposition products from the bubble accounts for the spot size influence the etch rate

Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

International Nuclear Information System (INIS)

Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R.

2015-01-01

An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

Energy Technology Data Exchange (ETDEWEB)

Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R., E-mail: dkillelea@luc.edu [Department of Chemistry and Biochemistry, Loyola University Chicago, 1068 W. Sheridan Rd., Chicago, Illinois 60660 (United States)

2015-03-15

An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

The influence of chemical etching time on efficiency of radon detection using CR-39

Energy Technology Data Exchange (ETDEWEB)

Reway, Adriana P.; Kappke, Jaqueline; Narloch, Danielle C., E-mail: adrireway@hotmail.com, E-mail: jaquelinekappke@gmail.com, E-mail: daninarloch@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Fisica; Del Claro, Flavia; Paschuk, Sergei A., E-mail: flaviadelclaro@gmail.com, E-mail: spaschuk@gmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Programa de Pos-Graduaca em Engenharia Eletrica e Informatica Industrial; Correa, Janine N., E-mail: janine_nicolosi@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Construcao Civil

2015-07-01

Natural radiation is the principal source of human exposure to ionizing radiation. Radon is noble radioactive gas that emanates from the soil and rocks entering the atmosphere of dwellings where it could be accumulated. The inhalation of {sup 222}Rn represents a significant health risk. Solid-State Nuclear Track Detectors (SSNTD) represents an efficient method for alpha particle detection and measurements of the activity concentration of {sup 222}Rn. The aim of present work was to study the etching time impact on CR-39 efficiency in radon activity measurements. The investigation was performed using 80 CR-39 detectors, which were exposed to a source of radon. After the exposition, alpha particle tracks development was achieved by chemical etching using 6.25M NaOH solution and ethanol (2%) at 70°C. Etching alpha particle tracks were identified and counted manually using the optical microscope with magnification of 100x and glass overlay mask. The etching time ranged from 7 to 14 hours. The results show that there is an increase in the number of visible tracks with increased etching time. The number of traces obtained for 7 hours and 8 hours of revelation was 1430 +/- 90 and 2090 +/- 160, respectively. However, for etching time of 13 and 14 hours was not observed statistical increase in the number of visible tracks. The number of tracks in this situation was 3630 +/- 180 and 3870 +/- 160 to 13 and 14 hours etching. Thus, for assumed etching parameters, the etching optimal time was observed 14 hours. (author)

The influence of chemical etching time on efficiency of radon detection using CR-39

International Nuclear Information System (INIS)

Reway, Adriana P.; Kappke, Jaqueline; Narloch, Danielle C.; Del Claro, Flavia; Paschuk, Sergei A.; Correa, Janine N.

2015-01-01

Natural radiation is the principal source of human exposure to ionizing radiation. Radon is noble radioactive gas that emanates from the soil and rocks entering the atmosphere of dwellings where it could be accumulated. The inhalation of 222 Rn represents a significant health risk. Solid-State Nuclear Track Detectors (SSNTD) represents an efficient method for alpha particle detection and measurements of the activity concentration of 222 Rn. The aim of present work was to study the etching time impact on CR-39 efficiency in radon activity measurements. The investigation was performed using 80 CR-39 detectors, which were exposed to a source of radon. After the exposition, alpha particle tracks development was achieved by chemical etching using 6.25M NaOH solution and ethanol (2%) at 70°C. Etching alpha particle tracks were identified and counted manually using the optical microscope with magnification of 100x and glass overlay mask. The etching time ranged from 7 to 14 hours. The results show that there is an increase in the number of visible tracks with increased etching time. The number of traces obtained for 7 hours and 8 hours of revelation was 1430 +/- 90 and 2090 +/- 160, respectively. However, for etching time of 13 and 14 hours was not observed statistical increase in the number of visible tracks. The number of tracks in this situation was 3630 +/- 180 and 3870 +/- 160 to 13 and 14 hours etching. Thus, for assumed etching parameters, the etching optimal time was observed 14 hours. (author)

Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

Energy Technology Data Exchange (ETDEWEB)

Riedel, Nicholas A. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Smith, Barbara S. [School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Williams, John D. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Popat, Ketul C., E-mail: ketul.popat@colostate.edu [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States)

2012-07-01

Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO{sub 2} peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: Black-Right-Pointing-Pointer Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates showed fewer adhered platelets. Black-Right-Pointing-Pointer Platelet activation was reduced by the improved oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates exhibited increased whole blood clotting times. Black-Right-Pointing-Pointer Although clotting reductions were

Determination of the depth of an etch pit through studies of diffraction rings

Energy Technology Data Exchange (ETDEWEB)

Basu, B. [Department of Physics, Bose Institute, 93/1 APC Road, Kolkata 700 009 (India); Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India); Dey, S.; Maulik, A. [Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India); Raha, Sibaji [Department of Physics, Bose Institute, 93/1 APC Road, Kolkata 700 009 (India); Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India); Saha, S. [Nuclear and Atomic Physics Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India); Saha, Swapan K. [Department of Physics, Bose Institute, 93/1 APC Road, Kolkata 700 009 (India); Centre for Astroparticle Physics and Space Science, Bose institute, Kolkata 700 091 (India)], E-mail: swapan@bosemain.boseinst.ac.in; Syam, D. [Department of Physics, Presidency College, Kolkata 700 073 (India)

2009-04-15

A Solid State Nuclear Track Detector (SSNTD) can be used to identify an impinging ion as well as to determine the energy of that ion. The track of the ion is made visible by chemically 'etching' the detector after exposure. By finding out the ratio of the track-etch rate (V{sub t}) to the bulk-etch rate (V{sub g}), together with the range of the ion in the detector, the identity and the energy of the ion can be ascertained. The required measurements can be conveniently made with the help of a microscope when the angle of incidence of the ion, with respect to the normal direction to the detector surface, is more than 15 deg.. For normal or near normal incidence, uncertainties plague the measurement of the depth of the etch pit and hence the range of the particle. Through this article we wish to suggest an alternative method of assessment, based on the observation of diffraction rings, of the depth of an etch pit.

Towards 2D field-flow fractionation - Vector separation over slanted open cavities

Science.gov (United States)

Bernate, Jorge A.; Yang, Mengfei; Zhao, Hong; Risbud, Sumedh; Paul, Colin; Dallas, Matthew; Konstantopoulos, Konstantinos; Drazer, German; Shaqfeh, Eric S. G.

2013-11-01

Planar microfluidic platforms for vector chromatography, in which different species fan out in different directions and can be continuously sorted, are particularly promising for the high throughput separation of multicomponent mixtures. We carry out a computational study of the vector separation of dilute suspensions of rigid and flexible particles transported by a pressure-driven flow over an array of slanted open cavities. The numerical scheme is based on a Stokes flow boundary integral equation method. The simulations are performed in a periodic system without lateral confinement, relevant to microfluidic devices with negligible recirculation in the main channel. We study the deflection of rigid spherical particles, of flexible capsules as a model of white and red blood cells, and of rigid discoidal particles as a model of platelets. We characterize the deflection of different particles as a function of their size, shape, shear elasticity, their release position, and the geometric parameters of the channel. The simulations provide insight into the separation mechanism and allow the optimization of specific devices depending on the application. Good agreement with experiments is observed.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains

Science.gov (United States)

Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

2018-03-01

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

3D memory: etch is the new litho

Science.gov (United States)

Petti, Christopher

2018-03-01

This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

Fabrication of sub-15 nm aluminum wires by controlled etching

International Nuclear Information System (INIS)

Morgan-Wall, T.; Hughes, H. J.; Hartman, N.; Marković, N.; McQueen, T. M.

2014-01-01

We describe a method for the fabrication of uniform aluminum nanowires with diameters below 15 nm. Electron beam lithography is used to define narrow wires, which are then etched using a sodium bicarbonate solution, while their resistance is simultaneously measured in-situ. The etching process can be stopped when the desired resistance is reached, and can be restarted at a later time. The resulting nanowires show a superconducting transition as a function of temperature and magnetic field that is consistent with their smaller diameter. The width of the transition is similar to that of the lithographically defined wires, indicating that the etching process is uniform and that the wires are undamaged. This technique allows for precise control over the normal state resistance and can be used to create a variety of aluminum nanodevices

A Design of Wide Band and Wide Beam Cavity-Backed Slot Antenna Array with Slant Polarization

Directory of Open Access Journals (Sweden)

Huiying Qi

2016-01-01

Full Text Available Design of antenna array under the limitation of restricted size is a challenging problem. Cavity-backed slot antenna is widely used because of its advantages of small size, wide band, and wide beam. In this paper, a design of wide band and wide beam cavity-backed slot antenna array with the slant polarization is proposed. To obtain wide band and wide beam with limited size, the inverted microstrip-fed cavity-backed slot antenna (IMF-CBSA is adopted as the element of 1 × 4 antenna array. The slant polarized antennas and their feeding networks are adopted because of their simple structures. The performance of the proposed antenna array is verified by the simulations and experiments. The measured VSWR < 2 bandwidth is 55% at the center frequency 21.8 GHz, and the gain is larger than 12.2 dB. Experimental results demonstrate that the proposed design achieves wide band and beam with the size of 68 mm × 56 mm × 14.5 mm.

Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

International Nuclear Information System (INIS)

Kim, D.Y.; Ko, J.H.; Park, M.S.; Lee, N.-E.

2008-01-01

Under certain conditions during ITO etching using CH 4 /H 2 /Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses of plasmas and etched ITO surfaces suggested that the continued consumption of the carbon and hydrogen in the deposited α-C:H layer by their chemical reaction with In and Sn atoms in the ITO resulting in the generation of volatile metal-organic etch products and by the ion-enhanced removal of the α-C:H layer presumably play important roles in determining the ITO etch rate and selectivity

Etching behaviour of alpha-recoil tracks in natural dark mica studied via artificial ion tracks

International Nuclear Information System (INIS)

Lang, M.; Glasmacher, U.A.; Neumann, R.; Wagner, G.A.

2003-01-01

Alpha-recoil tracks (ARTs) created by the α-decay of U, Th, and their daughter nuclei, are used by a new dating method to determine the formation age of dark mica bearing Quaternary and Neogene volcanic rocks and the cooling age of plutonic and metamorphic rocks [Chem. Geol. 166 (2000) 127, Science 155 (1967) 1103]. The age equation combines the volumetric density of ARTs with the U and Th contents. Etching latent ARTs (diameter 30-100 nm) in the mica mineral phlogopite by HF and measuring the areal density of triangular etch pits by optical and scanning force microscopy (SFM) leads to a linear growth of ART areal density versus etching time. The ART volume density is a function of the slope of the areal density and the etching rate (v eff ). Therefore, the determination of v eff is essential for the calculation of an age value. To determine the etching parameters such as etching efficiency and v eff , phlogopite samples were irradiated with 80 keV Au ions. Irradiated surfaces were etched with 4% HF at 23±2 deg. C during successive time intervals and after each interval studied with SFM. The etching rate v eff was determined by different techniques. To evaluate the threshold of etchability, the energy losses of the Au ions and α-recoil nuclei in phlogopite were calculated with the SRIM00 code. The etching efficiency of the Au ion tracks was then used to predict the corresponding etching efficiency of the natural radioactive nuclei

Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

International Nuclear Information System (INIS)

Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

1999-01-01

The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

Si etching with reactive neutral beams of very low energy

Energy Technology Data Exchange (ETDEWEB)

Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

2014-12-14

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

Influence of frequency on shear fatigue strength of resin composite to enamel bonds using self-etch adhesives.

Science.gov (United States)

Takamizawa, Toshiki; Scheidel, Donal D; Barkmeier, Wayne W; Erickson, Robert L; Tsujimoto, Akimasa; Latta, Mark A; Miyazaki, Masashi

2016-09-01

The purpose of this study was to determine the influence of different frequency rates on of bond durability of self-etch adhesives to enamel using shear fatigue strength (SFS) testing. A two-step self-etch adhesive (OX, OptiBond XTR), and two single step self-etch adhesives (GB, G-ӕnial Bond and SU, Scotchbond Universal) were used in this study. The shear fatigue strength (SFS) to enamel was obtained. A staircase method was used to determine the SFS values with 50,000 cycles or until failure occurred. Fatigue testing was performed at frequencies of 5Hz, 10Hz, and 20Hz. For each test condition, 30 specimens were prepared for the SFS testing. Regardless of the bond strength test method, OX showed significantly higher SFS values than the two single-step self-etch adhesives. For each of the three individual self-etch adhesives, there was no significant difference in SFS depending on the frequency rate, although 20Hz results tended to be higher. Regardless of the self-etch adhesive system, frequencies of 5Hz, 10Hz, and 20Hz produced similar results in fatigue strength of resin composite bonded to enamel using 50,000 cycles or until bond failure. Accelerated fatigue testing provides valuable information regarding the long term durability of resin composite to enamel bonding using self-etch adhesive system. Copyright © 2016 Elsevier Ltd. All rights reserved.

Plasma/Neutral-Beam Etching Apparatus

Science.gov (United States)

Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

1989-01-01

Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

Growth of KOH etched AZO nanorods and investigation of its back scattering effect in thin film a-Si solar cell

Science.gov (United States)

Sharma, Jayasree Roy; Mitra, Suchismita; Ghosh, Hemanta; Das, Gourab; Bose, Sukanta; Mandal, Sourav; Mukhopadhyay, Sumita; Saha, Hiranmay; Barua, A. K.

2018-02-01

In order to increase the stabilized efficiencies of thin film silicon (TFS) solar cells it is necessary to use better light management techniques. Texturization by etching of sputtered aluminum doped zinc oxide (Al:ZnO or AZO) films has opened up a variety of promises to optimize light trapping schemes. RF sputtered AZO film has been etched by potassium hydroxide (KOH). A systematic study of etching conditions such as etchant concentration, etching time, temperature management etc. have been performed in search of improved electrical and optical performances of the films. The change in etching conditions has exhibited a noticeable effect on the structure of AZO films for which the light trapping effect differs. After optimizing the etching conditions, nanorods have been found on the substrate. Hence, nanorods have been developed only by chemical etching, rather than the conventional development method (hydrothermal method, sol-gel method, electrolysis method etc.). The optimized etched substrate has 82% transmittance, moderate haze in the visible range and sheet resistance ∼13 (Ω/□). The developed nanorods (optimized etched substrate) provide better light trapping within the cell as the optical path length has been increased by using the nanorods. This provides an effect on carrier collection as well as the efficiency in a-Si solar cells. Finite difference time domain (FDTD) simulations have been performed to observe the light trapping by AZO nanorods formed on sputtered AZO films. For a p-i-n solar cell developed on AZO nanorods coated with sputtered AZO films, it has been found through simulations that, the incident light is back scattered into the absorbing layer, leading to an increase in photogenerated current and hence higher efficiency. It has been found that, the light that passes through the nanorods is not getting absorbed and maximum amount of light is back scattered towards the solar cell.

Sensitivity of chemically and electrochemically etched CR 39 polymers to the neutrons of AmBe source

International Nuclear Information System (INIS)

Turek, K.; Spurny, F.; Dajko, G.; Somogyi, G.

1981-01-01

Seven samples of polymers by different manufacturers were used in a study of the sensitivity of CR 39 polymers to Am-Be neutrons. In the polymer, proton tracks for a relatively broad energy range can also be recorded. The following characteristics were studied: the sample background for different etching methods, the dependence of sensitivity on the etched thickness and on neutron fluence, the effect of type and thickness of external proton emitters, and the effect of the choice of electric parameters on the resulting sensitivity in electrochemical etching. Good results were obtained when chemical and electrochemical etching was used in combination. It was found that with electrochemical etching, sensitivity decreases for neutron fluence exceeding 10 8 cm -2 . The sensitivity of the studied CR 39 polymer samples only little differed. When the most sensitive polymer was used, the minimum dose equivalent in the human body for Am-Be neutrons which could be determined using combination etching was 0.4 mSv (ie., 40 mrems). (B.S.)

Performance of a new one-step multi-mode adhesive on etched vs non-etched enamel on bond strength and interfacial morphology.

Science.gov (United States)

de Goes, Mario Fernando; Shinohara, Mirela Sanae; Freitas, Marcela Santiago

2014-06-01

To compare microtensile bond strength (μTBS) and interfacial morphology of a new one-step multimode adhesive with a two-step self-etching adhesive and two etch-and-rinse adhesives systems on enamel. Thirty human third molars were sectioned to obtain two enamel fragments. For μTBS, 48 enamel surfaces were ground using 600-grit SiC paper and randomly assigned into 6 groups (n = 8): nonetched Scotchbond Universal [SBU]; etched SBU [SBU-et]; non-etched Clearfil SE Bond [CSE]; etched CSE [CSE-et]; Scotchbond Multi-PURPOSE [SBMP]; Excite [EX]. The etched specimens were conditioned with 37% phosphoric acid for 30 s, each adhesive system was applied according to manufacturers' instructions, and composite resin blocks (Filtek Supreme Plus, 3M ESPE) were incrementally built up. Specimens were sectioned into beams with a cross-sectional area of 0.8-mm2 and tested under tension (1 mm/min). The data were analyzed with oneway ANOVA and Fisher's PLSD (α = 0.05). For interface analysis, two samples from each group were embedded in epoxy resin, polished, and then observed using scanning electron microscopy (SEM). The μTBS values (in MPa) and the standard deviations were: SBU = 27.4 (8.5); SBU-et = 33.6 (9.3); CSE = 28.5 (8.3); CSE-et = 34.2 (9.0); SBMP = 30.4 (11.0); EX = 23.3 (8.2). CSE-et and SBU-et presented the highest bond strength values, followed by SBMP, CSE, and SBU which did not differ significantly from each other. EX showed the statistically significantly lowest bond strength values. SEM images of interfaces from etched samples showed long adhesive-resin tags penetrating into demineralized enamel. Preliminary etching of enamel significantly increased bond strength for the new one-step multimode adhesive SBU and two-step self-etching adhesive CSE.

Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

Energy Technology Data Exchange (ETDEWEB)

Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw

2015-06-15

In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H{sub 3}PO{sub 4}, HCl, and HNO{sub 3} are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO{sub 3} exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10{sup −4} Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H{sub 3}PO{sub 4}, HCl and HNO{sub 3} were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm{sup 2} and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO{sub 3}-etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%.

Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

International Nuclear Information System (INIS)

Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon

2015-01-01

In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H 3 PO 4 , HCl, and HNO 3 are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO 3 exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10 −4 Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H 3 PO 4 , HCl and HNO 3 were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO 3 -etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm 2 and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO 3 -etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO 3 -etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%

Effects of etching time on enamel bond strengths.

Science.gov (United States)

Triolo, P T; Swift, E J; Mudgil, A; Levine, A

1993-12-01

This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

High-Density Plasma-Induced Etch Damage of GaN

International Nuclear Information System (INIS)

Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

1999-01-01

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

Particle precipitation in connection with KOH etching of silicon

DEFF Research Database (Denmark)

Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

2004-01-01

This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...... not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms...

Features of copper etching in chlorine-argon plasma

International Nuclear Information System (INIS)

Efremov, A.M.; Svettsov, V.I.

1995-01-01

Chlorine mixtures with inert gases including argon exhibit promise as plasma feed gases for etching metals and semiconductors in the microelectronics industry. It was shown that even strong dilution of reactive gas with an inert gas (up to 80-90% of the latter) has virtually no effect in decreasing the rate of plasma etching of materials such as silicon and gallium arsenide, compared to etching in pure chlorine. The principal reactive species responsible for etching these substrates are chlorine atoms therefore, a possible explanation of the effect is an increase in the rate of bulk generation of chlorine atoms in the presence of argon. In this work the authors studied the influence of argon on the rate of copper etching in chlorine, because copper, unlike the above substrates, reacts effectively not only with the atoms but with the ground-state molecules of chlorine

A study on the fabrication of superhydrophobic iron surfaces by chemical etching and galvanic replacement methods and their anti-icing properties

Energy Technology Data Exchange (ETDEWEB)

Li, Kunquan, E-mail: likunquan1987@gmail.com; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Li, Hongqiang, E-mail: hqli1979@gmail.com; Lai, Xuejun, E-mail: msxjlai@scut.edu.cn

2015-08-15

Graphical abstract: - Highlights: • Superhydrophobic iron surfaces were prepared by etching and replacement method. • The fabrication process was simple, time-saving and inexpensive. • Galvanic replacement method was more favorable to create roughness on iron surface. • The superhydrophobic iron surface showed excellent anti-icing properties. - Abstract: Hierarchical structures on iron surfaces were constructed by means of chemical etching by hydrochloric acid (HCl) solution or the galvanic replacement by silver nitrate (AgNO{sub 3}) solution. The superhydrophobic iron surfaces were successfully prepared by subsequent hydrophobic modification with stearic acid. The superhydrophobic iron surfaces were characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and water contact angle (WCA). The effects of reactive concentration and time on the microstructure and the wetting behavior were investigated. In addition, the anti-icing properties of the superhydrophobic iron surfaces were also studied. The FTIR study showed that the stearic acid was chemically bonded onto the iron surface. With the HCl concentration increase from 4 mol/L to 8 mol/L, the iron surface became rougher with a WCA ranging from 127° to 152°. The AgNO{sub 3} concentration had little effect on the wetting behavior, but a high AgNO{sub 3} concentration caused Ag particle aggregates to transform from flower-like formations into dendritic crystals, owing to the preferential growth direction of the Ag particles. Compared with the etching method, the galvanic replacement method on the iron surface more favorably created roughness required for achieving superhydrophobicity. The superhydrophobic iron surface showed excellent anti-icing properties in comparison with the untreated iron. The icing time of water droplets on the superhydrophobic surface was delayed to 500 s, which was longer than that of 295 s for

Neutron dosimetry using electrochemical etching

International Nuclear Information System (INIS)

Su, S.J.; Stillwagon, G.B.; Morgan, K.Z.

1977-01-01

Registration of α-tracks and fast-neutron-induced recoils tracks by the electrochemical etching technique as applied to sensitive polymer foils (e.g., polycarbonate) provides a simple, sensitive and inexpensive means of fast neutron personnel dosimetry as well as a valuable research tool for microdosimetry. When tracks were amplified by our electrochemical technique and the etching results compared with conventional etching technique a striking difference was noted. The electrochemically etched tracks were of much larger diameter (approx. 100 μm) and gave superior contrast. Two optical devices--the transparency projector and microfiche reader--were adapted to facilitate counting of the tracks appearing on our polycarbonate foils. The projector produced a magnification of 14X for a screen to projector distance of 5.0 meter and read's magnification was 50X. A Poisson distribution was determined for the number of tracks located in a particular area of the foil and experimentally verified by random counting of quarter sections of the microfiche reader screen. Finally, in an effort to determine dose equivalent (rem), a conversion factor is being determined by finding the sensitivity response (tracks/neutron) of recoil particle induced tracks as a function of monoenergetic fast neutrons and comparing results with those obtained by others

Microleakage assessment of fissure sealant following fissurotomy bur or pumice prophylaxis use before etching

Directory of Open Access Journals (Sweden)

Ali Bagherian

2013-01-01

The aim of this investigation was to compare the microleakage level of fissure sealants prepared by a fissurotomy bur or pumice prophylaxis prior to acid etching. Materials and Methods: Ninety freshly extracted healthy maxillary premolar teeth were randomly selected for this investigation. Teeth were then divided into three fissure sealant preparatory groups of A: Fissurotomy bur + acid etch; B: Pumice prophylaxis + acid etch and C: Acid etch alone. Sealant was applied to the occlusal fissures of all specimens using a plastic instrument. This was to avoid any air trap under the sealant. Sample teeth were first thermocycled (1000 cycles, 20 s dwell time and then coated with two layers of nail varnish leaving 2 mm around the sealant. This was then followed by immersion in basic fuchsin 3%. Processed teeth were sectioned longitudinally and examined under a stereomicroscope for microleakage assessment using a score of 0-3. Collected data was then subjected to Kruskall-Wallis Analysis of Variance and Mann-Whitney U-test. P < 0.05 was considered as significant. Results: Teeth in fissurotomy bur and pumice prophylaxis groups had significantly reduced level of microleakage than those in acid etch alone (P = 0.005 and P = 0.003, respectively. Conclusion: Use of fissurotomy bur and pumice prophylaxis accompanied with acid etching appears to have a more successful reduction of microleakage than acid etch alone.

Dislocation-free etching figures in crystals of CdxHg1-xTe solid solutions

International Nuclear Information System (INIS)

Kholina, E.N.; Khazieva, R.A.; Bursak, S.S.; Nevskij, O.B.; Filatov, A.V.; Popovyan, G.Eh.; Suslov, E.V.; Prijmak, A.N.

1988-01-01

Using the method of chemical etching, etching figures formed in areas distributed over Cd x Hg 1-x Te crystal with increased content of impurities consisting of Si,Al,Na,K,Cl,Fe,Ti,Mg and S mainly are revealed. The size of impurity inclusions is >1μm, that is why they cannot be detected either by optical microscopy or local microroentgenospectral analysis. Formation and distribution of impurity inclusions are obviously defined by only the concentration of impurity atoms in the melt. The shape of etching figures does not depend on crystallographical orientation of the crystal-matrix

Gamma emission tomosynthesis based on an automated slant hole collimation system

Science.gov (United States)

Pellegrini, R.; Pani, R.; Cinti, M. N.; Longo, M.; Lo Meo, S.; Viviano, M.

2015-03-01

The imaging capabilities of radioisotope molecular imaging systems are limited by their ring geometry and by the object-to-detector distance, which impairs spatial resolution, efficiency and image quality. These detection capabilities could be enhanced by performing acquisitions with dedicated gamma cameras placed in close proximity to the object that has to be examined. The main aim of this work is to develop a compact camera suitable for detecting small and low-contrast lesions, with a higher detection efficiency than conventional SPECT, through a gamma emission tomosynthesis method. In this contribution a prototype of a new automated slant hole collimator, coupled to a small Field of View (FoV) gamma camera, is presented. The proposed device is able to acquire planar projection images at different angles without rotating around the patient body; these projection images are then three-dimensional reconstructed. Therefore, in order to perform the volumetric reconstruction of the studied object, the traditional Back Projection (BP) reconstruction is compared with the Shift And Add (SAA) method. In order to verify the effectiveness of the technique and to test the image reconstruction algorithms, a Monte Carlo simulation, based on the GEANT4 code, was implemented. The method was also validated by a set of experimental measurements. The discussed device is designed to work in patient proximity for detecting lesions placed at a distances ranged from 0 to 8 cm, thus allowing few millimeters planar resolutions and sagittal resolution of about 2 cm. The new collimation method implies high-resolution capabilities demonstrated by reconstructing the projection images through the BP and the SAA methods. The latter is simpler than BP and produces comparable spatial resolutions with respect to the traditional tomographic method, while preserving the image counts.

Electronegativity-dependent tin etching from thin films

Energy Technology Data Exchange (ETDEWEB)

Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

2016-07-15

The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

Numerical investigation of the effects of geometric parameters on transverse motion with slanted-groove micro-mixers

Energy Technology Data Exchange (ETDEWEB)

Baik, Seung Joo; Cho, Jae Yong; Choi, Se Bin; Lee, Joon Sang [School of Mechanical Engineering, Yonsei University, Seoul (Korea, Republic of)

2016-08-15

We investigated hydrodynamic phenomena inside several passive microfluidic mixers using a Lattice Boltzmann method (LBM) based on particle mesoscopic kinetic equations. Mixing processes were simulated in a Slanted grooved micro-mixer (SGM), a Staggered herringbone grooved micro-mixer (SHM), and a Bi-layered staggered herringbone grooved micro-mixer (BSHM). Then, the effects of six geometric mixer parameters (i.e., groove height to channel height ratio, groove width to groove pitch length ratio, groove pitch to groove height ratio, groove intersection angle, herringbone groove asymmetric ratio and bi-layered groove asymmetric ratio) on mixing were investigated using computed cross-flow velocity and helicity density distributions in the flow cross-section. We demonstrated that helicity density provides sufficient information to analyze micro helical motion within a micro-mixer, allowing for micro-mixer design optimization.

A Study of the arsenic profiles in NMOS by using chemical etching and simulation

International Nuclear Information System (INIS)

Jung, Won-Chae; Lee, Kil-Dong

2004-01-01

For integrated semiconductor devices, the one-, two-, and three-dimensional impurity distributions are very important for the analyzing the devices. The one-dimensional arsenic profiles were measured by using secondary ion mass spectroscopy (SIMS), and simulation data were obtained by using the TSUPREM4 and UT-Marlowe programs. The two-dimensional profiles of arsenic were directly measured by using the chemical etching-method, and the measured 2D profiles were compared with simulation data obtained from TSUPREM4. A Taurus simulation tool was used to obtain the 3D arsenic profiles. The simulated data of UT-Marlowe in 1D agreed very well with the SIMS data. The measured two-dimensional transmission electron microscope (TEM) data obtained by using the chemical etching-method matched very well with the results of the TSUPREM4 simulation. The chemical etching and the TEM measurement methods demonstrated and visualized the two-dimensional impurity distributions and structures of the devices.

Electrodeposited manganese dioxide nanostructures on electro-etched carbon fibers: High performance materials for supercapacitor applications

International Nuclear Information System (INIS)

Kazemi, Sayed Habib; Maghami, Mostafa Ghaem; Kiani, Mohammad Ali

2014-01-01

Highlights: • We report a facile method for fabrication of MnO 2 nanostructures on electro-etched carbon fiber. • MnO 2 -ECF electrode shows outstanding supercapacitive behavior even at high discharge rates. • Exceptional cycle stability was achieved for MnO 2 -ECF electrode. • The coulombic efficiency of MnO 2 -ECF electrode is nearly 100%. - Abstract: In this article we introduce a facile, low cost and additive/template free method to fabricate high-rate electrochemical capacitors. Manganese oxide nanostructures were electrodeposited on electro-etched carbon fiber substrate by applying a constant anodic current. Nanostructured MnO 2 on electro-etched carbon fiber was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive X-ray analysis. The electrochemical behavior of MnO 2 electro-etched carbon fiber electrode was investigated by electrochemical techniques including cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy. A maximum specific capacitance of 728.5 F g −1 was achieved at a scan rate of 5 mV s −1 for MnO 2 electro-etched carbon fiber electrode. Also, this electrode showed exceptional cycle stability, suggesting that it can be considered as a good candidate for supercapacitor electrodes

Electrodeposited manganese dioxide nanostructures on electro-etched carbon fibers: High performance materials for supercapacitor applications

Energy Technology Data Exchange (ETDEWEB)

Kazemi, Sayed Habib, E-mail: habibkazemi@iasbs.ac.ir [Department of Chemistry, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan 45137-66731 (Iran, Islamic Republic of); Center for Research in Climate Change and Global Warming (CRCC), Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan 45137-66731 (Iran, Islamic Republic of); Maghami, Mostafa Ghaem [Department of Chemistry, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan 45137-66731 (Iran, Islamic Republic of); Kiani, Mohammad Ali [Chemistry and Chemical Engineering Research Center of Iran, P.O. Box 14335-186, Tehran (Iran, Islamic Republic of)

2014-12-15

Highlights: • We report a facile method for fabrication of MnO{sub 2} nanostructures on electro-etched carbon fiber. • MnO{sub 2}-ECF electrode shows outstanding supercapacitive behavior even at high discharge rates. • Exceptional cycle stability was achieved for MnO{sub 2}-ECF electrode. • The coulombic efficiency of MnO{sub 2}-ECF electrode is nearly 100%. - Abstract: In this article we introduce a facile, low cost and additive/template free method to fabricate high-rate electrochemical capacitors. Manganese oxide nanostructures were electrodeposited on electro-etched carbon fiber substrate by applying a constant anodic current. Nanostructured MnO{sub 2} on electro-etched carbon fiber was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive X-ray analysis. The electrochemical behavior of MnO{sub 2} electro-etched carbon fiber electrode was investigated by electrochemical techniques including cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy. A maximum specific capacitance of 728.5 F g{sup −1} was achieved at a scan rate of 5 mV s{sup −1} for MnO{sub 2} electro-etched carbon fiber electrode. Also, this electrode showed exceptional cycle stability, suggesting that it can be considered as a good candidate for supercapacitor electrodes.

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

Science.gov (United States)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Influence of copper foil polycrystalline structure on graphene anisotropic etching

Energy Technology Data Exchange (ETDEWEB)

Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2017-01-30

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Influence of copper foil polycrystalline structure on graphene anisotropic etching

International Nuclear Information System (INIS)

Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

2017-01-01

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Enamel resistance to demineralization following Er:YAG laser etching for bonding orthodontic brackets

Science.gov (United States)

Ahrari, Farzaneh; Poosti, Maryam; Motahari, Pourya

2012-01-01

Background: Several studies have shown that laser-etching of enamel for bonding orthodontic brackets could be an appropriate alternative for acid conditioning, since a potential advantage of laser could or might be caries prevention. This study compared enamel resistance to demineralization following etching with acid phosphoric or Er:YAG laser for bonding orthodontic brackets. Materials and Methods: Fifty sound human premolars were divided into two equal groups. In the first group, enamel was etched with 37% phosphoric acid for 15 seconds. In the second group, Er:YAG laser (wavelength, 2 940 nm; 300 mJ/pulse, 10 pulses per second, 10 seconds) was used for tooth conditioning. The teeth were subjected to 4-day PH-cycling process to induce caries-like lesions. The teeth were then sectioned and the surface area of the lesion was calculated in each microphotographs and expressed in pixel. The total surface of each specimen was 196 608 pixels. Results: Mean lesion areas were 7 171 and 7532 pixels for Laser-etched and Acid-etched groups, respectively. The two sample t-test showed that there was no significant difference in lesion area between the two groups (P = 0.914). Conclusion: Although Er:YAG laser seems promising for etching enamel before bonding orthodontic brackets, it does not reduce enamel demineralization when exposed to acid challenge. PMID:23162591

Exploration of suitable dry etch technologies for directed self-assembly

Science.gov (United States)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Tomographic images of cerebral blood flow using a slant hole collimator

International Nuclear Information System (INIS)

Wraight, E.P.; Barber, R.W.; Crossland, P.; Maltby, P.

1983-01-01

The feasibility of using a rotating slant hole (RSH) collimator on simple tomographic equipment such as a standard gamma camera interfaced to a general purpose Nuclear Medicine computer is reported for producing images of cerebral blood flow following the administration of 123 I-iodoamphetamine to patients. Initial studies produced satisfactory images, thus opening the possibility of tomographic cerebral blood flow imaging to centres not possessing sophisticated tomographic equipment. Planar resolution is superior to that reported for a 25 0 RSH collimator. Axial resolution is not as good at small source distances but is comparable at distances beyond 10 cm. Sensitivity is comparable to other RSH collimators and is similar to Technicare's parallel hole general all purpose collimator. (UK)

Bond strength and morphology of enamel using self-etching adhesive systems with different acidities

Directory of Open Access Journals (Sweden)

Sandra Kiss Moura

2009-08-01

Full Text Available OBJECTIVES: To assess the bond strength and the morphology of enamel after application of self-etching adhesive systems with different acidities. The tested hypothesis was that the performance of the self-etching adhesive systems does not vary for the studied parameters. MATERIAL AND METHODS: Composite resin (Filtek Z250 buildups were bonded to untreated (prophylaxis and treated (bur-cut or SiC-paper enamel surfaces of third molars after application of four self-etching and two etch-and-rinse adhesive systems (n=6/condition: Clearfil SE Bond (CSE; OptiBond Solo Plus Self-Etch (OP; AdheSe (AD; Tyrian Self Priming Etching (TY, Adper Scotchbond Multi-Purpose Plus (SBMP and Adper Single Bond (SB. After storage in water (24 h/37°C, the bonded specimens were sectioned into sticks with 0.8 mm² cross-sectional area and the microtensile bond strength was tested at a crosshead speed of 0.5 mm/min. The mean bond strength values (MPa were subjected to two-way ANOVA and Tukey's test (α=0.05. The etching patterns of the adhesive systems were also observed with a scanning electron microscope. RESULTS: The main factor adhesive system was statistically significant (p<0.05. The mean bond strength values (MPa and standard deviations were: CSE (20.5±3.5, OP (11.3±2.3, AD (11.2±2.8, TY (11.1±3.0, SBMP (21.9±4.0 and SB (24.9±3.0. Different etching patterns were observed for the self-etching primers depending on the enamel treatment and the pH of the adhesive system. CONCLUSION: Although there is a tendency towards using adhesive systems with simplified application procedures, this may compromise the bonding performance of some systems to enamel, even when the prismless enamel is removed.

Dry etch challenges for CD shrinkage in memory process

Science.gov (United States)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

Directory of Open Access Journals (Sweden)

Ann-Kathrin Kleinschmidt

2016-11-01

Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

Long-term measurements of equilibrium factor with electrochemically etched CR-39 SSNTD

International Nuclear Information System (INIS)

Ng, F.M.F.; Nikezic, D.; Yu, K.N.

2007-01-01

Recently, our group proposed a method (proxy equilibrium factor method) using a bare LR 115 detector for long-term monitoring of the equilibrium factor. Due to the presence of an upper alpha-particle energy threshold for track formation in the LR 115 detector, the partial sensitivities to 222 Rn, 218 Po and 214 Po were the same, which made possible measurements of a proxy equilibrium factor F p that was well correlated with the equilibrium factor. In the present work, the method is extended to CR-39 detectors which have better-controlled etching properties but do not have an upper energy threshold. An exposed bare CR-39 detector is first pre-etched in 6.25 N NaOH solution at 70 o C for 6 h, and then etched electrochemically in a 6.25 N NaOH solution with ac voltage of 400 V (peak to peak) and 5 kHz applied across the detectors for 1 h at room temperature. Under these conditions, for tracks corresponding to incident angles larger than or equal to 50 deg., the treeing efficiency is 0% and 100% for incident energies smaller than and larger than 4 MeV, respectively. A simple method is then proposed to obtain the total number of tracks formed below the upper energy threshold of 4 MeV, from which the proxy equilibrium factor method can apply

Development and application of the electrochemical etching technique. Annual progress report

International Nuclear Information System (INIS)

1979-08-01

This report documents advances in the development and application of the electrochemical etching technique for thermal and epithermal neutron dosimetry as well as track geometry determinations. The bulk and track etching rates were studied by evaluating the track geometry during electrochemical etching. The foil surface removed versus etching time for two different etchants at 1000 V, 2 kHz, and 22 0 C were studied. Results indicated that the bulk etching rates were constant for the two etchants, i.e. 45% KOH and 45% KOH mixed with an equal volume of C 2 H 5 OH 5 and were equal to 0.20 +- 0.14 μm/hr and 2.7 +- 0.27 μm/hr from each side of the foil. The track etching rate (as contrasted with the bulk etching rate) can be determined by the microscope focus at various depths. The increase of track depth values as a function of etching time for the two etchants are plotted. The track cone angles were determined and found to be much larger for electrochemically etched polycarbonate foils than for most plastics etched with passive chemical techniques

Effects of mask imperfections on InP etching profiles

International Nuclear Information System (INIS)

Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

1990-01-01

The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

Energy Technology Data Exchange (ETDEWEB)

Economou, Demetre J.; Donnelly, Vincent M.

2014-05-13

Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

Effect of evaporation of solvents from one-step, self-etching adhesives

DEFF Research Database (Denmark)

Furuse, Adilson Yoshio; Peutzfeldt, Anne; Asmussen, Erik

2008-01-01

PURPOSE: To investigate whether and to what extent the bonding capacity of one-step, self-etching adhesives is influenced by the degree to which solvent is evaporated. MATERIALS AND METHODS: Seven one-step, self-etching adhesives were tested (Adper Prompt L-Pop, Clearfil S3 Bond, Futurabond NR, G....... After being stored in water at 37 degrees C for 1 week, the bonded specimens were broken in shear. Failure modes were evaluated under stereomicroscope. RESULTS: Air-blowing duration and brand of adhesive both had an effect on shear bond strength. An interaction was found between adhesive and air...... failures were observed with shorter air-blowing durations. A significant negative correlation between number of adhesive failures and bond strength was found. CONCLUSION: On the basis of this in vitro study, it may be concluded that the one-step, self-etching adhesives evaluated were sensitive to degree...

The mechanism of selective corrugation removal by KOH anisotropic wet etching

International Nuclear Information System (INIS)

Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

2010-01-01

The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate

AFM and SEM study of the effects of etching on IPS-Empress 2 TM dental ceramic

Science.gov (United States)

Luo, X.-P.; Silikas, N.; Allaf, M.; Wilson, N. H. F.; Watts, D. C.

2001-10-01

The aim of this study was to investigate the effects of increasing etching time on the surface of the new dental material, IPS-Empress 2 TM glass ceramic. Twenty one IPS-Empress 2 TM glass ceramic samples were made from IPS-Empress 2 TM ingots through lost-wax, hot-pressed ceramic fabrication technology. All samples were highly polished and cleaned ultrasonically for 5 min in acetone before and after etching with 9.6% hydrofluoric acid gel. The etching times were 0, 10, 20, 30, 60, 90 and 120 s respectively. Microstructure was analysed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) was used to evaluate the surface roughness and topography. Observations with SEM showed that etching with hydrofluoric acid resulted in preferential dissolution of glass matrix, and that partially supported crystals within the glass matrix were lost with increasing etching time. AFM measurements indicated that etching increased the surface roughness of the glass-ceramic. A simple least-squares linear regression was used to establish a relationship between surface roughness parameters ( Ra, RMS), and etching time, for which r2>0.94. This study demonstrates the benefits of combining two microscopic methods for a better understanding of the surface. SEM showed the mode of action of hydrofluoric acid on the ceramic and AFM provided valuable data regarding the extent of surface degradation relative to etching time.

Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

International Nuclear Information System (INIS)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

2016-01-01

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

Selective dry etching of silicon containing anti-reflective coating

Science.gov (United States)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

Simple and fast polydimethylsiloxane (PDMS) patterning using a cutting plotter and vinyl adhesives to achieve etching results.

Science.gov (United States)

Hyun Kim; Sun-Young Yoo; Ji Sung Kim; Zihuan Wang; Woon Hee Lee; Kyo-In Koo; Jong-Mo Seo; Dong-Il Cho

2017-07-01

Inhibition of polydimethylsiloxane (PDMS) polymerization could be observed when spin-coated over vinyl substrates. The degree of polymerization, partially curing or fully curing, depended on the PDMS thickness coated over the vinyl substrate. This characteristic was exploited to achieve simple and fast PDMS patterning method using a vinyl adhesive layer patterned through a cutting plotter. The proposed patterning method showed results resembling PDMS etching. Therefore, patterning PDMS over PDMS, glass, silicon, and gold substrates were tested to compare the results with conventional etching methods. Vinyl stencils with widths ranging from 200μm to 1500μm were used for the procedure. To evaluate the accuracy of the cutting plotter, stencil designed on the AutoCAD software and the actual stencil widths were compared. Furthermore, this method's accuracy was also evaluated by comparing the widths of the actual stencils and etched PDMS results.

Slant Path Distances Through Cells in Cylindrical Geometry and an Application to the Computation of Isophotes

Energy Technology Data Exchange (ETDEWEB)

Rodney Whitaker

2007-12-17

In computer programs involving two-dimensional cylindrical geometry, it is often necessary to calculate the slant path distance in a given direction from a point to the boundary of a mesh cell. A subroutine, HOWFAR, has been written that accomplishes this, and is very economical in computer time. An example of its use is given in constructing the isophotes for a low altitude nuclear fireball.

Etching patterns on the micro‐ and nanoscale

DEFF Research Database (Denmark)

Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

2014-01-01

‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

Plasma etching a ceramic composite. [evaluating microstructure

Science.gov (United States)

Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

1992-01-01

Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

Etch characteristics of BCB film using inductively coupled plasma

International Nuclear Information System (INIS)

Kang, Pil Seung; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il; Kim, Sang Gi

2003-01-01

The etching characteristics and mechanism of BCB thin films were investigated as a function of CF 4 /O 2 mixing ratio in ICP system. Maximum etch rate of 830 nm/min is obtained at the mixture of O 2 /CF 4 (=80%/20%). OES actinometry results showed that volume density of oxygen atoms fallows the same extreme behavior with the BCB etch rate, while the density of fluorine atoms changes monotonously. Therefore chemical destruction of BCB by oxygen atoms was proposed as the dominant etch mechanism. XPS analysis showed that the addition of CF 4 to O 2 helps to volatilize silicon atoms containing in BCB but leads to the formation of F-containing polymer layer. The profile of etched BCB film was close to 90 .deg. and the surface was clean

No-waiting dentine self-etch concept-Merit or hype.

Science.gov (United States)

Huang, Xue-Qing; Pucci, César R; Luo, Tao; Breschi, Lorenzo; Pashley, David H; Niu, Li-Na; Tay, Franklin R

2017-07-01

A recently-launched universal adhesive, G-Premio Bond, provides clinicians with the alternative to use the self-etch technique for bonding to dentine without waiting for the adhesive to interact with the bonding substrate (no-waiting self-etch; Japanese brochure), or after leaving the adhesive undisturbed for 10s (10-s self-etch; international brochure). The present study was performed to examine in vitro performance of this new universal adhesive bonded to human coronal dentine using the two alternative self-etch modes. One hundred and ten specimens were bonded using two self-etch application modes and examined with or without thermomechanical cycling (10,000 thermal cycles and 240,000 mechanical cycles) to simulate one year of intraoral functioning. The bonded specimens were sectioned for microtensile bond testing, ultrastructural and nanoleakage examination using transmission electron microscopy. Changes in the composition of mineralised dentine after adhesive application were examined using Fourier transform infrared spectroscopy. Both reduced application time and thermomechanical cycling resulted in significantly lower bond strengths, thinner hybrid layers, and significantly more extensive nanoleakage after thermomechanical cycling. Using the conventional 10-s application time improved bonding performance when compared with the no-waiting self-etch technique. Nevertheless, nanoleakage was generally extensive under all testing parameters employed for examining the adhesive. Although sufficient bond strength to dentine may be achieved using the present universal adhesive in the no-waiting self-etch mode that does not require clinicians to wait prior to polymerisation of the adhesive, this self-etch concept requires further technological refinement before it can be recommended as a clinical technique. Although the surge for cutting application time to increase user friendliness remains the most frequently sought conduit for advancement of dentine bonding

What's new in dentine bonding? Self-etch adhesives.

Science.gov (United States)

Burke, F J Trevor

2004-12-01

Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

Science.gov (United States)

Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

2015-02-25

In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

Technique for etching monolayer and multilayer materials

Science.gov (United States)

Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

2015-10-06

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Dry etching of ferroelectric Bi4-xEuxTi3O12 (BET) thin films

International Nuclear Information System (INIS)

Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

2004-01-01

Bi 4-x Eu x Ti 3 O 12 (BET) thin films were etched by using a inductively coupled Cl 2 /Ar plasma. We obtained a maximum etch rate of 69 nm/min at a gas mixing ratio of Cl 2 (20 %)/Ar (80 %). This result suggests that an effective method for BET etching is chemically assisted physical etching. With increasing coil RF power, the plasma density increases so that the increased reactive free radicals and ions enhance the etch rates of BET, Pt, and SiO 2 . As the dc-bias voltage is increased, the increased ion energy leads to an increased etch rate of BET films. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O, and the Ti-O peaks change with increasing Cl 2 concentration. For a pure Ar plasma, the peak associated with the oxygen-metal (O-M: TiO 2 , Bi 2 O 3 , Eu 2 O 3 ) bond seems to disappear while the pure oxygen peak does not appear. After the BET thin films is etched by using a Cl 2 /Ar plasma, the peak associated with the O-M bond increases slowly, but more quickly than the peak associated with pure oxygen atoms, due to a decrease in the Ar-ion bombardment. These results seem to indicate that Bi and Eu react little with Cl atoms and are removed predominantly by argon-ion bombardment. Also, Ti reacts little with Cl radicals and is mainly removed by chemically assisted physical etching.

Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

Energy Technology Data Exchange (ETDEWEB)

Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

2017-07-15

Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching

KAUST Repository

Najar, Adel

2017-04-18

Herein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density and the length of nanowires increased with longer etching time, and excellent substrate coverage was observed. The average nanowire width and length are around 35 nm and 10 μm, respectively. Transmission electron microscopy (TEM) shows a single-crystalline wurtzite structure and is confirmed by X-ray measurements. The synthesis mechanism of GaN NWs using the metal-assisted photochemical electroless etching method was presented. Photoluminescence (PL) measurements of GaN NWs show red-shift PL peaks compared to the as-grown sample associated with the relaxation of compressive stress. Furthermore, a shift of the E2 peak to the lower frequency in the Raman spectra for the samples etched for a longer time confirms such a stress relaxation. Based on Raman measurements, the compressive stress σxx and the residual strain εxx were evaluated to be 0.23 GPa and 2.6 × 10−4, respectively. GaN NW synthesis using a low cost method might be used for the fabrication of power optoelectronic devices and gas sensors.

Single Mode Optical Fiber based Refractive Index Sensor using Etched Cladding

OpenAIRE

Kumar, Ajay; Gupta, Geeta; Mallik, Arun; Bhatnagar, Anuj

2011-01-01

The use of optical fiber for sensor applications is a topic of current interest. We report the fabrication of etched single mode optical fiber based refractive index sensor. Experiments are performed to determine the etch rate of fiber in buffered hydrofluoric acid, which can be high or low depending upon the temperature at which etching is carried out. Controlled wet etching of fiber cladding is performed using these measurements and etched fiber region is tested for refractive index sensing...

Plasma atomic layer etching using conventional plasma equipment

International Nuclear Information System (INIS)

Agarwal, Ankur; Kushner, Mark J.

2009-01-01

The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching (PALE) is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with carefully tailored activation energy then removes a single layer of the underlying material. If these goals are met, the process is self-limiting. A challenge of PALE is the high cost of specialized equipment and slow processing speed. In this work, results from a computational investigation of PALE will be discussed with the goal of demonstrating the potential of using conventional plasma etching equipment having acceptable processing speeds. Results will be discussed using inductively coupled and magnetically enhanced capacitively coupled plasmas in which nonsinusoidal waveforms are used to regulate ion energies to optimize the passivation and etch steps. This strategy may also enable the use of a single gas mixture, as opposed to changing gas mixtures between steps

Torque Analysis of a Triple Acid-Etched Titanium Implant Surface

Directory of Open Access Journals (Sweden)

Ana Emília Farias Pontes

2015-01-01

Full Text Available The present study aimed to evaluate the removal torque of titanium implants treated with triple acid etching. Twenty-one rats were used in this study. For all animals, the tibia was prepared with a 2 mm drill, and a titanium implant (2 × 4 mm was inserted after treatment using the subtraction method of triple acid etching. The flaps were sutured. Seven animals were killed 14, 28, and 63 days after implant installation, and the load necessary for removing the implant from the bone was evaluated by using a torque meter. The torque values were as follows: 3.3 ± 1.7 Ncm (14 days, 2.2 ± 1.3 Ncm (28 days, and 6.7 ± 1.4 Ncm (63 days. The torque value at the final healing period (63 days was statistically significantly different from that at other time points tested (ANOVA, p=0.0002. This preliminary study revealed that treatment with triple acid etching can create a promising and efficient surface for the process of osseointegration.

Chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer

International Nuclear Information System (INIS)

Komaki, Y.; Tsujimura, S.; Seguchi, T.

1979-01-01

The chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer was studied. Etched holes 3000 to 4000 A in diameter were recognized by electron microscopy for a film bombarded by fission fragments in oxygen and etched in a 12N sodium hydroxide solution at 125 0 C. The radial etching rate at 125 0 C was 6 to 8 A/hr, which is less than 17 A/hr for polyvinylidene fluoride in the same sodium hydroxide concentration at 85 0 C. The smaller rate is a reflection of the larger chemical resistivity of ethylene-tetrafluoroethylene copolymer than polyvinylidene fluoride. (author)

Preparation of Track Etch Membrane Filters Using Polystyrene Film

International Nuclear Information System (INIS)

Kaewsaenee, Jerawut; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

2007-08-01

Full text: Polystyrene nuclear track etch membrane filters was prepared by exposed 13 .m thin film polystyrene with fission fragment. Nuclear latent track was enlarged to through hole on the film by etching with 80 o C 40% H 2 SO 4 with K 2 Cr 2 O 7 solution for 6-10 hour. The hole size was depend on concentration of etching solution and etching time with 1.3-3.4 .m hole diameter. The flow rate test of water was 0.79-1.56 mm cm-2 min-1 at 109.8-113.7 kPa pressure

Method For Producing Mechanically Flexible Silicon Substrate

KAUST Repository

Hussain, Muhammad Mustafa

2014-08-28

A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

Method For Producing Mechanically Flexible Silicon Substrate

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto

2014-01-01

A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

Acid-catalyzed kinetics of indium tin oxide etching

Energy Technology Data Exchange (ETDEWEB)

Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

2014-08-28

We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

Etching of germanium-tin using ammonia peroxide mixture

Energy Technology Data Exchange (ETDEWEB)

Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

2015-12-28

The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

Sub-micrometer-scale patterning on Zr-based metallic glass using focused ion beam irradiation and chemical etching

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Morita, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Yamada, Shigeru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Takano, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Ashida, Kiwamu [Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kochi 782-8502 (Japan); Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Ofune, Hitoshi [YKK Corporation, 200 Yoshida, Kurobe, Toyama 938-8601 (Japan)

2007-09-19

This report describes a method of sub-micrometer-scale rapid patterning on a Zr-based metallic glass surface using a combination of focused ion beam irradiation and wet chemical etching. We found that a Zr-based metallic glass surface irradiated with Ga{sup +} ions could be selectively etched; a concave structure with a width and depth of several tens to hundreds of nanometers rapidly formed in the irradiated area. Moreover, we determined that the etching was enhanced by the presence of Ga{sup +} ions rather than a change in the crystal structure, and the structure could be fabricated while the substrate remained amorphous. The shape of the structure was principally a function of the dose and the etch time.

Surfactant-enhanced control of track-etch pore morphology

International Nuclear Information System (INIS)

Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

2000-01-01

The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

Etching and anti-etching strategy for sensitive colorimetric sensing of H2O2 and biothiols based on silver/carbon nanomaterial.

Science.gov (United States)

Hou, Wenli; Liu, Xiaoying; Lu, Qiujun; Liu, Meiling; Zhang, Youyu; Yao, Shouzhuo

2018-02-01

In this paper, the colorimetric sensing of H 2 O 2 related molecules and biothiols based on etching and anti-etching strategy was firstly proposed. Ag/carbon nanocomposite (Ag/C NC) was served as the sensing nanoprobe, which was synthesized via carbon dots (C-dots) as the reductant and stabilizer. The characteristic surface plasmon resonance (SPR) absorbance of Ag nanoparticles (AgNPs) was sensitive to the amount of hydrogen peroxide (H 2 O 2 ). It exhibited strong optical responses to H 2 O 2 with the solution colour changing from yellow to nearly colourless, which is resulted from the etching of Ag by H 2 O 2 . The sensing platform was further extended to detect H 2 O 2 related molecules such as lactate in coupling with the specific catalysis oxidation of L-lactate by lactate oxidase (LOx) and formation of H 2 O 2 . It provides wide linear range for detecting H 2 O 2 in 0.1-80μM and 80-220μM with the detection limit as low as 0.03μM (S/N=3). In the presence of biothiols, the etching from the H 2 O 2 can be hampered. Other biothiols exhibit anti-etching effects well. The strategy works well in detecting of typical biothiols including cysteine (Cys), homocysteine (Hcy) and glutathione (GSH). Thus, a simple colorimetric strategy for sensitive detection of H 2 O 2 and biothiols is proposed. It is believed that the colorimetric sensor based on etching and anti-etching strategy can be applied in other systems in chemical and biosensing areas. Copyright © 2017 Elsevier B.V. All rights reserved.

Temperature increase beneath etched dentin discs during composite polymerization.

Science.gov (United States)

Karaarslan, Emine Sirin; Secilmis, Asli; Bulbul, Mehmet; Yildirim, Cihan; Usumez, Aslihan

2011-01-01

The purpose of this in vitro study was to measure the temperature increase during the polymerization of a composite resin beneath acid-etched or laser-etched dentin discs. The irradiation of dentin with an Er:YAG laser may have a positive effect on the thermal conductivity of dentin. This technique has not been studied extensively. Forty dentin discs (5 mm in diameter and 0.5 or 1 mm in height) were prepared from extracted permanent third molars. These dentin discs were etched with 20% orthophosphoric acid or an Er:YAG laser, and were then placed on an apparatus developed to measure temperature increases. The composite resin was polymerized with a high-intensity quartz tungsten halogen (HQTH) or light-emitting diode unit (LED). The temperature increase was measured under the dentin disc with a J-type thermocouple wire that was connected to a data logger. Five measurements were made for each dentin disc, curing unit, and etching system combination. Differences between the initial and the highest temperature readings were taken, and the five calculated temperature changes were averaged to determine the value of the temperature increase. Statistical analysis was performed with a three-way ANOVA and Tukey HSD tests at a 0.05 level of significance. Further SEM examinations were performed. The temperature increase values varied significantly, depending on etching systems (p < 0.05), dentin thicknesses (p < 0.05), and curing units (p < 0.05). Temperature increases measured beneath laser-etched discs were significantly higher than those for acid-etched dentin discs (p < 0.05). The HQTH unit induced significantly higher temperature increases than the LED unit (p < 0.05). The LED unit induced the lowest temperature change (5.2°C) in the 1-mm, acid-etched dentin group. The HQTH unit induced the highest temperature change (10.4°C) for the 0.5-mm, laser-etched dentin group. The risk of heat-induced pulpal damage should be taken into consideration

Process margin enhancement for 0.25-μm metal etch process

Science.gov (United States)

Lee, Chung Y.; Ma, Wei Wen; Lim, Eng H.; Cheng, Alex T.; Joy, Raymond; Ross, Matthew F.; Wong, Selmer S.; Marlowe, Trey

2000-06-01

This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCureTM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCureTM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm2. A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl3 and Cl2. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side

Effect of collagen fibrils removal on shear bond strength of total etch and self etch adhesive systems

Directory of Open Access Journals (Sweden)

Pishevar L.

2009-12-01

Full Text Available "nBackground and Aim: Sodium hypochlorite can remove the organic phase of the demineralized dentin and it produces direct resin bonding with hydroxyapatite crystals. Therefore, the hydrolytic degradation of collagen fibrils which might affect the bonding durability is removed. The aim of this study was to evaluate the effect of collagen fibrils removal by 10% NaOCl on dentin shear bond strength of two total etch and self etch adhesive systems."nMaterials and Methods: Sixty extracted human premolar teeth were used in this study. Buccal surface of teeth were grounded until dentin was exposed. Then teeth were divided into four groups. According to dentin surface treatment, experimental groups were as follows: Group I: Single Bond (3M according to manufacture instruction, Group II: 10% NaOCl+Single bond (3M, Group III: Clearfil SE Bond (Kuraray according to manufacture instruction, and Group IV: Clearfil SE Bond primer. After that, the specimens were immersed in 50% acetone solution for removing extra monomer. Then the specimens were rinsed and dried. 10% NaOCl was applied and finally adhesive was used. Then composite was bonded to the treated surfaces using a 4 2 mm cylindrical plastic mold. Specimens were thermocycled for 500 cycles (5-55ºC. A shear load was employed by a universal testing machine with a cross head speed of 1mm/min. The data were analyzed for statistical significance with One-way ANOVA, Two-way ANOVA and Tukey HSD post-hoc tests."nResults: The mean shear bond strengths of groups were as follows: Single Bond=16.8±4.2, Clearfil SE Bond=23.7±4.07, Single Bond+NaOCl=10.5±4.34, Clearfil SE Bond+NaOCl=23.3±3.65 MPa. Statistical analysis revealed that using 10% NaOCl significantly decreased the shear bond strength in Single Bond group (P=0.00, but caused no significant difference in the shear bond strength in Clearfil SE Bond group (P=0.99."nConclusion: Based on the results of this study, NaOCl treatment did not improve the bond

Plasma etching of polymers like SU8 and BCB

Science.gov (United States)

Mischke, Helge; Gruetzner, Gabi; Shaw, Mark

2003-01-01

Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

Effect of nanotechnology in self-etch bonding systems on the shear bond strength of stainless steel orthodontic brackets

OpenAIRE

Hammad, Shaza M.; El-Wassefy, Noha; Maher, Ahmed; Fawakerji, Shafik M.

2017-01-01

ABSTRACT Objective: To evaluate the effect of silica dioxide (SiO2) nanofillers in different bonding systems on shear bond strength (SBS) and mode of failure of orthodontic brackets at two experimental times. Methods: Ninety-six intact premolars were divided into four groups: A) Conventional acid-etch and primer Transbond XT; B) Transbond Plus self-etch primer; and two self-etch bonding systems reinforced with silica dioxide nanofiller at different concentrations: C) Futurabond DC at 1%; D...

Simulation of convection-driven wet-chemical etching

NARCIS (Netherlands)

Driesen, C.H.

1999-01-01

a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

Single-crystal silicon trench etching for fabrication of highly integrated circuits

Science.gov (United States)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Optimization of some electrochemical etching parameters for cellulose derivatives

International Nuclear Information System (INIS)

Chowdhury, Annis; Gammage, R.B.

1978-01-01

Electrochemical etching of fast neutron induced recoil particle tracks in cellulose derivatives and other polymers provides an inexpensive and sensitive means of fast neutron personnel dosimetry. A study of the shape, clarity, and size of the tracks in Transilwrap polycarbonate indicated that the optimum normality of the potassium hydroxide etching solution is 9 N. Optimizations have also been attempted for cellulose nitrate, triacetate, and acetobutyrate with respect to such electrochemical etching parameters as frequency, voltage gradient, and concentration of the etching solution. The measurement of differential leakage currents between the undamaged and the neutron damaged foils aided in the selection of optimum frequencies. (author)

Advanced dry etching studies for micro- and nano-systems

DEFF Research Database (Denmark)

Rasmussen, Kristian Hagsted

and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

Dentin bond strength and degree of conversion evaluation of experimental self-etch adhesive systems

OpenAIRE

Yazdi, Fatemeh-Maleknejad; Moosavi, Horieh; Atai, Mohammad; Zeynali, Mahsa

2015-01-01

Background The aim of this study was to investigate the effect of different concentrations of 10-methacryloyloxydecyl dihydrogen phosphate (10-MDP) monomer in one-step self-etch experimental adhesives on dentinal microshear bond strength (?SBS), their degree of conversion and bonded micro structure. Material and Methods Composite resin cylinders (Clearfil AP-X) were bonded on human sound molar dentinal surfaces by using five experimental one-step self-etching adhesives (1-SEAs) containing 0% ...

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

International Nuclear Information System (INIS)

Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

2012-01-01

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

Manufacture of anti-bogus label by track-etching technique

International Nuclear Information System (INIS)

He Xiangming; Wan Chunrong

2006-01-01

Anti-bogus label is manufactured by the track-etching technique. The apparent pattern on the label consists of track-etched pores on the membrane. The manufacture of the label depends on the intricate technology and the state strictly controls the sensitive nuclear facilities, ensuring that the label is not copied. The pattern on the label is specially characterized by permeability of liquid in order to distinguish it from a forged one. A genuine label can be distinguished from a sham one by a transparent liquid (e.g. water) or a colorful pen. Nowadays, the products of more than 100 famous brands (trade mark) have been protected from forgery by this technology in the market of China. This is a new method for the utilization of a research reactor

Antibacterial Effect and Tensile Bond Strength of Self-etching Adhesive Resins with and without Methacryloyloxydodecylpyridinium Bromide: An in vitro Study.

Science.gov (United States)

Krishnamurthy, Madhuram; Kumar, V Naveen; Leburu, Ashok; Dhanavel, Chakravarthy; Selvendran, Kasiswamy E; Praveen, Nehrudhas

2018-04-01

Aim: The aim of the present study was to compare the antibacterial activity of a self-etching primer containing antibacterial monomer methacryloyloxydodecylpyridinium bromide (MDPB) (Clearfil protect bond) with a conventional self-etching primer without MDPB (Clearfil SE bond) against Streptococcus mutans and the effect of incorporation of MDPB on the tensile bond strength of the experimental self-etching primer (Clearfil protect bond). Materials and methods: The antibacterial activity of the self-etching primers was assessed using agar disk diffusion method and the diameters of the zones of inhibition were measured and ranked. For tensile bond strength testing, 20 noncarious human molars were selected and randomly divided into two groups comprising 10 teeth in each group. Group I specimens were treated with Clearfil SE bond (without MDPB). Group II specimens were treated with Clearfil protect bond (with MDPB). Composite material was placed incrementally and cured for 40 seconds in all the specimens. Tensile bond strength was estimated using the Instron Universal testing machine at a crosshead speed of 1 mm/min. Results: The addition of MDPB into a self-etching primer exerts potential antibacterial effect against S. mutans. The tensile bond strength of MDPB containing self-etching primer was slightly lower than that of the conventional self-etching Clearfil protect bond primer, but the difference was not statistically significant. Conclusion: Thus, a self-etching primer containing MDPB will be a boon to adhesive dentistry as it has bactericidal property with adequate tensile bond strength. Clinical significance: The concept of prevention of extension in adhesive dentistry would result in micro/nanoleakage due to the presence of residual bacteria in the cavity. Self-etching primers with MDPB would improve the longevity of such restorations by providing adequate antibacterial activity without compromising the bond strength. Keywords: Antibacterial property

Etching of uranium dioxide in nitrogen trifluoride RF plasma glow discharge

Science.gov (United States)

Veilleux, John Mark

1999-10-01

A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO2 were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO2 from stainless steel substrates. Experiments were conducted using NF3 gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Results demonstrated that UO2 can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO2 in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 mum/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO2 etching was also noted below 50 W in which etching increased up to a maximum pressure, ˜23 Pa, then decreased with further increases in pressure. A computer simulation, CHEMKIN, was applied to predict the NF3 plasma species in the experiments. The code was validated first by comparing its predictions of the NF3 plasma species with mass spectroscopy etching experiments of silicon. The code predictions were within +/-5% of the measured species concentrations. The F atom radicals were identified as the primary etchant species, diffusing from the bulk plasma to the UO2 surface and reacting to form a volatile UF6, which desorbed into the gas phase to be pumped away. Ions created in the plasma were too low in concentration to have a major effect on etching, but can enhance the etch rate by removing non-volatile reaction products blocking the reaction of F with UO2. The composition of these non-volatile products were determined based on thermodynamic analysis and the electronic structure of uranium. Analysis identified possible non-volatile products as the uranium fluorides, UF2-5, and certain uranium oxyfluorides UO2F, UO2F2, UOF3, and UOF 4 which form over the

Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching

KAUST Repository

Najar, Adel; Shafa, Muhammad; Anjum, Dalaver H.

2017-01-01

Herein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density

Simulation of convection-driven wet-chemical etching

NARCIS (Netherlands)

Driesen, C.H.

1999-01-01

In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

Feedback control of chlorine inductively coupled plasma etch processing

International Nuclear Information System (INIS)

Lin Chaung; Leou, K.-C.; Shiao, K.-M.

2005-01-01

Feedback control has been applied to poly-Si etch processing using a chlorine inductively coupled plasma. Since the positive ion flux and ion energy incident upon the wafer surface are the key factors that influence the etch rate, the ion current and the root mean square (rms) rf voltage on the wafer stage, which are measured using an impedance meter connected to the wafer stage, are adopted as the controlled variables to enhance etch rate. The actuators are two 13.56 MHz rf power generators, which adjust ion density and ion energy, respectively. The results of closed-loop control show that the advantages of feedback control can be achieved. For example, with feedback control, etch rate variation under the transient chamber wall condition is reduced roughly by a factor of 2 as compared to the open-loop case. In addition, the capability of the disturbance rejection was also investigated. For a gas pressure variation of 20%, the largest etch rate variation is about 2.4% with closed-loop control as compared with as large as about 6% variation using open-loop control. Also the effect of ion current and rms rf voltage on etch rate was studied using 2 2 factorial design whose results were used to derive a model equation. The obtained formula was used to adjust the set point of ion current and rf voltage so that the desired etch rate was obtained

Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

International Nuclear Information System (INIS)

Kakati, A; Maji, D; Das, S

2017-01-01

Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µ m thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C 16 H 36 FN) and tetra-n-butylammonium fluoride (C 5 H 9 NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µ m min −1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5–15 gm l −1 of silicic acid (SiO 2xH2 O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µ m etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures. (paper)

Effect of chemical etching on the Cu/Ni metallization of poly (ether ether ketone)/carbon fiber composites

International Nuclear Information System (INIS)

Di Lizhi; Liu Bin; Song Jianjing; Shan Dan; Yang Dean

2011-01-01

Poly(ether ether ketone)/carbon fiber composites (PEEK/Cf) were chemical etched by Cr 2 O 3 /H 2 SO 4 solution, electroless plated with copper and then electroplated with nickel. The effects of chemical etching time and temperature on the adhesive strength between PEEK/Cf and Cu/Ni layers were studied by thermal shock method. The electrical resistance of some samples was measured. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface composition and functional groups. Scanning electron microscopy (SEM) was performed to observe the surface morphology of the composite, the chemical etched sample, the plated sample and the peeled metal layer. The results indicated that C=O bond increased after chemical etching. With the increasing of etching temperature and time, more and more cracks and partially exposed carbon fibers appeared at the surface of PEEK/Cf composites, and the adhesive strength increased consequently. When the composites were etched at 60 deg. C for 25 min and at 70-80 deg. C for more than 15 min, the Cu/Ni metallization layer could withstand four thermal shock cycles without bubbling, and the electrical resistivity of the metal layer of these samples increased with the increasing of etching temperature and time.

Future developments in etched track detectors for neutron dosimetry

International Nuclear Information System (INIS)

Tommasino, L.

1987-01-01

Many laboratories engaged in the field of personal neutron dosimetry are interested in developing better etching processes and improving the CR-39 detecting materials. To know how much effort must still be devoted to the development of etch track dosimetry, it is necessary to understand the advantages. limitations and degree of exploitation of the currently available techniques. So much has been learned about the chemical and electrochemical etching processes that an optimised combination of etching processes could make possible the elimination of many of the existing shortcomings. Limitations of etched track detectors for neutron dosimetry arise mainly because the registration occurs only on the detector surface. These damage type detectors are based on radiation induced chain scission processes in polymers, which result in hole-type tracks in solids. The converse approach, yet to be discovered, would be the development of cure-track detectors, where radiation induced cross linking between organic polymer chains could result in solid tracks in liquids. (author)

Ion track etching revisited: II. Electronic properties of aged tracks in polymers

Science.gov (United States)

Fink, D.; Muñoz Hernández, G.; Cruz, S. A.; Garcia-Arellano, H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

2018-02-01

We compile here electronic ion track etching effects, such as capacitive-type currents, current spike emission, phase shift, rectification and background currents that eventually emerge upon application of sinusoidal alternating voltages across thin, aged swift heavy ion-irradiated polymer foils during etching. Both capacitive-type currents and current spike emission occur as long as obstacles still prevent a smooth continuous charge carrier passage across the foils. In the case of sufficiently high applied electric fields, these obstacles are overcome by spike emission. These effects vanish upon etchant breakthrough. Subsequent transmitted currents are usually of Ohmic type, but shortly after breakthrough (during the track' core etching) often still exhibit deviations such as strong positive phase shifts. They stem from very slow charge carrier mobility across the etched ion tracks due to retarding trapping/detrapping processes. Upon etching the track's penumbra, one occasionally observes a split-up into two transmitted current components, one with positive and another one with negative phase shifts. Usually, these phase shifts vanish when bulk etching starts. Current rectification upon track etching is a very frequent phenomenon. Rectification uses to inverse when core etching ends and penumbra etching begins. When the latter ends, rectification largely vanishes. Occasionally, some residual rectification remains which we attribute to the aged polymeric bulk itself. Last not least, we still consider background currents which often emerge transiently during track etching. We could assign them clearly to differences in the electrochemical potential of the liquids on both sides of the etched polymer foils. Transient relaxation effects during the track etching cause their eventually chaotic behaviour.

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

Science.gov (United States)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

Modeling of block copolymer dry etching for directed self-assembly lithography

Science.gov (United States)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

International Nuclear Information System (INIS)

Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin; Li Tie

2008-01-01

Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min -1 , while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Science.gov (United States)

Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

2018-06-01

The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

A novel approach to particle track etching: surfactant enhanced control of pore morphology

International Nuclear Information System (INIS)

Apel', P.Yu.; Dmitriev, S.N.; Vutsadakis, V.A.; Root, D.

2000-01-01

Based on the understanding of the mechanism behind a long observed but thus far unexplained effect, a new method to control the geometry of nano- and micropores is described. Surfactant molecules added to an etching solution used for etching out ion tracks, create a steric-hindrance effect which is responsible for the formation of 'bottleneck' or 'cigar-like' pores. Filtration membranes thus obtained exhibit significantly improved flow rates without deterioration in the retention properties. New applications are made possible with these new pore geometries

Shear bond strength of self-etch and total-etch bonding systems at different dentin depths

Directory of Open Access Journals (Sweden)

Ana Carolina Maito Villela-Rosa

2011-04-01

Full Text Available The purpose of this study was to evaluate the dentin shear bond strength of four adhesive systems (Adper Single Bond 2, Adper Prompt L-Pop, Magic Bond DE and Self Etch Bond in regards to buccal and lingual surfaces and dentin depth. Forty extracted third molars had roots removed and crowns bisected in the mesiodistal direction. The buccal and lingual surfaces were fixed in a PVC/acrylic resin ring and were divided into buccal and lingual groups assigned to each selected adhesive. The same specimens prepared for the evaluation of superficial dentin shear resistance were used to evaluate the different depths of dentin. The specimens were identified and abraded at depths of 0.5, 1.0, 1.5 and 2.0 mm. Each depth was evaluated by ISO TR 11405 using an EMIC-2000 machine regulated at 0.5 mm/min with a 200 Kgf load cell. We performed statistical analyses on the results (ANOVA, Tukey and Scheffé tests. Data revealed statistical differences (p < 0.01 in the adhesive and depth variation as well as adhesive/depth interactions. The Adper Single Bond 2 demonstrated the highest mean values of shear bond strength. The Prompt L-Pop product, a self-etching adhesive, revealed higher mean values compared with Magic Bond DE and Self Etch Bond adhesives, a total and self-etching adhesive respectively. It may be concluded that the shear bond strength of dentin is dependent on material (adhesive system, substrate depth and adhesive/depth interaction.

Atomistic simulations of graphite etching at realistic time scales.

Science.gov (United States)

Aussems, D U B; Bal, K M; Morgan, T W; van de Sanden, M C M; Neyts, E C

2017-10-01

Hydrogen-graphite interactions are relevant to a wide variety of applications, ranging from astrophysics to fusion devices and nano-electronics. In order to shed light on these interactions, atomistic simulation using Molecular Dynamics (MD) has been shown to be an invaluable tool. It suffers, however, from severe time-scale limitations. In this work we apply the recently developed Collective Variable-Driven Hyperdynamics (CVHD) method to hydrogen etching of graphite for varying inter-impact times up to a realistic value of 1 ms, which corresponds to a flux of ∼10 20 m -2 s -1 . The results show that the erosion yield, hydrogen surface coverage and species distribution are significantly affected by the time between impacts. This can be explained by the higher probability of C-C bond breaking due to the prolonged exposure to thermal stress and the subsequent transition from ion- to thermal-induced etching. This latter regime of thermal-induced etching - chemical erosion - is here accessed for the first time using atomistic simulations. In conclusion, this study demonstrates that accounting for long time-scales significantly affects ion bombardment simulations and should not be neglected in a wide range of conditions, in contrast to what is typically assumed.

BOND STRENGTH OF SELF-ETCH ADHESIVES WITH PRIMARY AND PERMANENT TEETH DENTIN – IN VITRO STUDY.

Directory of Open Access Journals (Sweden)

Natalia Gateva

2012-03-01

Full Text Available Objective: The aim of this study was to compare dentin bond strength of primary and permanent teeth with self-etching adhesive systems. Methods: On 40 intact specimens of primary and permanent teeth was created flat dentin surfaces. The patterns were divided in 4 groups. Two different self-etching adhesive systems were used – one two steps (AdheSE, VivaDent and one one step (AdheSE One, VivaDent. Resin composite build-ups were constructed by means of convetional copper ring after applying the adhesive. The specimens were stored in water for 72 h at room temperature. After that specimens were tested for macrotensile bond strength. Debonded surfaces were analyzed by SEM.Conclusions: The measured values of dentin bond strength after applying self-etching adhesives are statistically significant in group of permanent teeth in comparison with group of primary teeth, and for both adhesive generations. Two steps self-etching adhesive provide significant stronger dentin bond strength with both dentitions in comparison with one step self-etching adhesive.

Study on the etched carnelian beads unearthed in China

Institute of Scientific and Technical Information of China (English)

Deyun Zhao

2014-01-01

Etched carnelian beads originated in the Indus Civilization;this kind of ornaments and its manufacturing techniques were spread to the whole Eurasia Continent.The etched carnelian beads unearthed in China can be classified into four types,the comparisons of which to their foreign counterparts may reveal their different sources and diffusion routes.The etched carnelian beads and their glass imitations unearthed in China had influences to the making of the glass "eye beads" in

Formation of biaxial texture in metal films by selective ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

2006-05-15

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

Formation of biaxial texture in metal films by selective ion beam etching

International Nuclear Information System (INIS)

Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

2006-01-01

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

Catalytically-etched hexagonal boron nitride flakes and their surface activity