Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

DEFF Research Database (Denmark)

Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

2005-01-01

The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

Plasma-assisted ALD for the conformal deposition of SiO2 : process, material and electronic properties

NARCIS (Netherlands)

Dingemans, G.; Helvoirt, van C.A.A.; Pierreux, D.; Keuning, W.; Kessels, W.M.M.

2012-01-01

Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail.

Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

OpenAIRE

Barranco Quero, Ángel; Cotrino Bautista, José; Yubero Valencia, Francisco; Espinós, J. P.; Rodríguez González-Elipe, Agustín

2004-01-01

Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independent...

Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

International Nuclear Information System (INIS)

Jia, Q.X.; Arendt, P.; Groves, J.R.; Fan, Y.; Roper, J.M.; Foltyn, S.R.

1998-01-01

Highly conductive biaxially textured RuO 2 thin films were deposited on technically important SiO 2 /Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO 2 on SiO 2 /Si. The biaxially oriented RuO 2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba 0.5 Sr 0.5 TiO 3 thin films on RuO 2 /IBAD-YSZ/SiO 2 /Si. The Ba 0.5 Sr 0.5 TiO 3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society

Fabrication of a Large-Area Superhydrophobic SiO2 Nanorod Structured Surface Using Glancing Angle Deposition

Directory of Open Access Journals (Sweden)

Xun Lu

2017-01-01

Full Text Available A glancing angle deposition (GLAD technique was used to generate SiO2 nanorods on a glass substrate to fabricate a low-cost superhydrophobic functional nanostructured surface. GLAD-deposited SiO2 nanorod structures were fabricated using various deposition rates, substrate rotating speeds, oblique angles, and deposition times to analyze the effects of processing conditions on the characteristics of the fabricated functional nanostructures. The wettability of the surface was measured after surface modification with a self-assembled monolayer (SAM. The measured water contact angles were primarily affected by substrate rotation speed and oblique angle because the surface fraction of the GLAD nanostructure was mainly affected by these parameters. A maximum contact angle of 157° was obtained from the GLAD sample fabricated at a rotation speed of 5 rpm and an oblique angle of 87°. Although the deposition thickness (height of the nanorods was not a dominant factor for determining the wettability, we selected a deposition thickness of 260 nm as the optimum processing condition based on the measured optical transmittance of the samples because optically transparent films can serve as superhydrophobic functional nanostructures for optical applications.

Synthesis and Luminescence Properties of Yellow-emitting SiO2/Zn2SiO4: Mn Nanocomposite

Directory of Open Access Journals (Sweden)

Karim OMRI

2014-05-01

Full Text Available Yellow light emitting Mn2+-doped b-Zn2SiO4 phosphor nanoparticles embedded in SiO2 host matrix, were prepared by a simple solid-phase reaction under natural atmosphere at 1500 °C for 2 hours after the incorporation of manganese doped zinc oxide nanoparticles in silica using sol-gel method. The SiO2/Zn2SiO4:Mn nanocomposite was characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM and photoluminescence (PL. The nanopowder was crystallized in triclinic b-Zn2SiO4 phase with a particles size varies between 70 nm and 84 nm. The SiO2/b-Zn2SiO4:Mn nanocomposite exhibited a broad yellow emission band at 575 nm under UV excitation light. The dependence of the intensity and energy position of the obtained PL band on measurement temperature and power excitation will be discussed.

Synchrotron radiation stimulated etching of SiO sub 2 thin films with a Co contact mask for the area-selective deposition of self-assembled monolayer

CERN Document Server

Wang, C

2003-01-01

The area-selective deposition of a self-assembled monolayer (SAM) was demonstrated on a pattern structure fabricated by synchrotron radiation (SR) stimulated etching of a SiO sub 2 thin film on the Si substrate. The etching was conducted by irradiating the SiO sub 2 thin film with SR through a Co contact mask and using a mixture of SF sub 6 + O sub 2 as the reaction gas. The SR etching stopped completely at the SiO sub 2 /Si interface. After the SR etching, the Si surface and the SiO sub 2 surface beneath the Co mask were evaluated by an atomic force microscope (AFM). A dodecene SAM was deposited on the Si surface, and trichlorosilane-derived SAMs (octadecyltrichlorosilane, and octenyltrichlorosilane) were deposited on the SiO sub 2 surface beneath the Co mask. The structure of the deposited SAMs showed a densely packed and well-ordered molecular architecture, which was characterized by infrared spectroscopy, ellipsometry, and water contact angle (WCA) measurements. (author)

Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

Science.gov (United States)

Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

2017-07-01

The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

NARCIS (Netherlands)

Didden, A.; Hillebrand, P.; Wollgarten, M.; Dam, B.; Van de Krol, R.

2016-01-01

Conductive TiN shells have been deposited on SiO2 nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Science.gov (United States)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

Science.gov (United States)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

International Nuclear Information System (INIS)

Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

2008-01-01

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

Photocatalytic properties of Au-deposited mesoporous SiO_2–TiO_2 photocatalyst under simultaneous irradiation of UV and visible light

International Nuclear Information System (INIS)

Okuno, T.; Kawamura, G.; Muto, H.; Matsuda, A.

2016-01-01

Mesoporous SiO_2 templates deposited TiO_2 nanocrystals are synthesized via a sol–gel route, and Au nanoparticles (NPs) are deposited in the tubular mesopores of the templates by a photodeposition method (Au/SiO_2–TiO_2). The photocatalytic characteristics of Au/SiO_2–TiO_2 are discussed with the action spectra of photoreactions of 2-propanol and methylene blue. Photocatalytic activities of SiO_2–TiO_2 under individual ultraviolet (UV) and visible (Vis) light illumination are enhanced by deposition of Au NPs. Furthermore, Au/SiO_2–TiO_2 shows higher photocatalytic activities under simultaneous irradiation of UV and Vis light compared to the activity under individual UV and Vis light irradiation. Since the photocatalytic activity under simultaneous irradiation is almost the same as the total activities under individual UV and Vis light irradiation, it is concluded that the electrons and the holes generated by lights of different wavelengths are efficiently used for photocatalysis without carrier recombination. - Graphical abstract: This graphic shows the possible charge behavior in Au/SiO_2–TiO_2 under independent light irradiation of ultraviolet and visible light irradiation. Both reactions under independent UV and Vis light irradiation occurred in parallel when Au/SiO_2–TiO_2 photocatalyst was illuminated UV and Vis light simultaneously, and then photocatalytic activity is improved by simultaneous irradiation. - Highlights: • Au nanoparticles were deposited in mesoporous SiO_2–TiO_2 by a photodeposition method. • Photocatalytic activity under UV and Vis light was enhanced by deposition of Au. • Photocatalytic activity of Au/SiO_2–TiO_2 was improved by simultaneous irradiation.

Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

Science.gov (United States)

de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

2017-05-01

Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

Porous SiO2/HAp Coatings on Cp-Titanium Grade 1 Surfaces Produced by Electrophoretic Deposition

Directory of Open Access Journals (Sweden)

Moskalewicz T.

2016-12-01

Full Text Available Porous hydroxyapatite doped SiO2 coatings were electrophoretically deposited (EPD on commercially pure titanium. The influence of EPD parameters on coatings quality was investigated. Microstructural observation was done using transmission and scanning electron microscopy as well as X-ray diffractometry.

Atomistic simulation of the thermal conductivity in amorphous SiO2 matrix/Ge nanocrystal composites

Science.gov (United States)

Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.

2017-04-01

We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.

Processing of SiO2 protective layer using HMDS precursor by combustion CVD.

Science.gov (United States)

Park, Kyoung-Soo; Kim, Youngman

2011-08-01

Hexamethyldisilazane (HMDS, [(CH3)3Si]2NH) was used as a precursor to form SiO2 protective coatings on IN738LC alloys by combustion chemical vapor deposition (CCVD). SEM and XPS showed that the processed coatings were composed mainly of SiO2. The amount of HMDS had the largest effect on the size of the SiO2 agglomerates and the thickness of the deposited coatings. The specimens coated with SiO2 using the 0.05 mol/l HMDS solution showed a significantly higher temperature oxidation resistance than those deposited under other conditions.

A novel fabrication of a high performance SiO(2)-graphene oxide (GO) nanohybrids: Characterization of thermal properties of epoxy nanocomposites filled with SiO(2)-GO nanohybrids.

Science.gov (United States)

Haeri, S Z; Ramezanzadeh, B; Asghari, M

2017-05-01

In this study it has been aimed to enhance the thermal resistance of epoxy coating through incorporation of SiO 2 -GO nanohybrids. SiO 2 -GO nanohybrids were synthesized through one-step sol-gel route using a mixture of Tetraethylorthosilane (TEOS) and 3-Aminopropyl triethoxysilane (APTES) silanes. The SiO 2 -GO nanohybrids were prepared at various hydrolysis times of 24, 48 and 72h. Then 0.2wt.% of GO and SiO 2 -GO nanohybrids were separately incorporated into the epoxy coating. Results revealed that amino functionalized SiO 2 nanoparticles with particle size around 20-30nm successfully synthesized on the basal plane of GO. Results showed significant improvement of dispersion and interfacial interactions between nanohybrids and epoxy composite arising from covalent bonding between the SiO 2 -GO and the epoxy matrix. It was found that the thermal resistance of SiO 2 -GO nanohybrids and SiO 2 -GO/Epoxy nanocomposite was noticeably higher than GO and epoxy matrix, respectively. Copyright © 2017 Elsevier Inc. All rights reserved.

Synthesize and characterization of a novel anticorrosive cobalt ferrite nanoparticles dispersed in silica matrix (CoFe2O4-SiO2) to improve the corrosion protection performance of epoxy coating

International Nuclear Information System (INIS)

Gharagozlou, M.; Ramezanzadeh, B.; Baradaran, Z.

2016-01-01

Highlights: • An anticorrosive cobalt ferrite nanopigment dispersed in silica matrix was synthesized. • The nanopigment showed proper inhibition performance in solution study. • The nanopigment significantly improved the corrosion resistance of the epoxy coating. - Abstract: This study aimed at studying the effect of an anticorrosive nickel ferrite nanoparticle dispersed in silica matrix (NiFe 2 O 4 -SiO 2 ) on the corrosion protection properties of steel substrate. NiFe 2 O 4 and NiFe 2 O 4 -SiO 2 nanopigments were synthesized and then characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and transmission electron microscope (TEM). Then, 1 wt.% of nanopigments was dispersed in an epoxy coating and the resultant nanocomposites were applied on the steel substrates. The corrosion inhibition effects of nanopigments were tested by an electrochemical impedance spectroscopy (EIS) and salt spray test. Results revealed that dispersing nickel ferrite nanoparticles in a silica matrix (NiFe 2 O 4 -SiO 2 ) resulted in the enhancement of the nanopigment dispersion in the epoxy coating matrix. Inclusion of 1 wt.% of NiFe 2 O 4 -SiO 2 nanopigment into the epoxy coating enhanced its corrosion protection properties before and after scratching.

Electronic and surface properties of pentacene films deposited on SiO2 prepared by the sol–gel and thermally grown methods

International Nuclear Information System (INIS)

Dai, Chi-Jie; Tsao, Hou-Yen; Lin, Yow-Jon; Liu, Day-Shan

2014-01-01

This study investigates the effect of different types of SiO 2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO 2 surfaces than sol–gel SiO 2 surfaces, suggesting that the thermally grown SiO 2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO 2 dielectrics is higher than that in pentacene on sol–gel SiO 2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules. - Highlights: • The carrier mobility of pentacene on thermally grown and sol–gel SiO 2 was researched. • The enhanced carrier mobility of pentacene on thermally grown SiO2 was observed. • The dominance of tunneling (hopping) at low (high) temperatures was observed. • The carrier mobility is correlated with the morphology of pentacene films

Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

KAUST Repository

Cheng, Yingchun

2013-01-01

Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

Energy Technology Data Exchange (ETDEWEB)

Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe [Université Grenoble-Alpes, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

2016-05-15

Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ from which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very

Coupling between Ge-nanocrystals and defects in SiO2

International Nuclear Information System (INIS)

Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.

2006-01-01

Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect

Sol-gel synthesis and characterization of single-phase Ni ferrite nanoparticles dispersed in SiO2 matrix

International Nuclear Information System (INIS)

Nadeem, K.; Traussnig, T.; Letofsky-Papst, I.; Krenn, H.; Brossmann, U.; Wuerschum, R.

2010-01-01

Nanoparticles of NiFe 2 O 4 dispersed in SiO 2 (25 wt%) matrix were synthesized by sol-gel method using tetraethyl orthosilicate (TEOS), as a precursor for SiO 2 . The sol-gel method for nanocomposites normally provides multi-phase nanoparticles. We investigated by a synopsis of different analysis methods, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and SQUID-magnetometry, how the various chemical phases are transformed to a single-phase spinel structure during the various stages of annealing from 300 to 900 o C. We have developed a full phase diagram of chemical phases as a function of annealing temperature. The average particle size lies in the range 16-27 nm. The chemical phases formed below 900 o C are NiFe, NiO, γ-Fe 2 O 3 , α-Fe 2 O 3 , and NiFe 2 O 4 , respectively. The role of the TEOS prepared SiO 2 matrix is to restrict the particle size in a small range in order to rule out particle size effects. In the mid-infrared, a shift of the vibrational Fe-O bond is observed from 568 to 586 cm -1 for annealing between 500 and 700 o C which indicates an increasing NiFe 2 O 4 phase formation. A systematic study of coercivity field (ranging from 32 to 200 Oe) and saturation magnetic moment (ranging from 12.2 to 32.1 emu/g) for differently annealed samples supports our findings about the evolution of single-phase NiFe 2 O 4 at 900 o C. The opposite trend of saturation magnetic moment and coercivity with respect to annealing temperature clearly separates the different phases of metallic, antiferromagnetic, and finally single-phase spinel NiFe 2 O 4 .

Silver nanoparticle deposition on inverse opal SiO2 films embedded in protective polypropylene micropits for SERS applications

Science.gov (United States)

Ammosova, Lena; Ankudze, Bright; Philip, Anish; Jiang, Yu; Pakkanen, Tuula T.; Pakkanen, Tapani A.

2018-01-01

Common methods to fabricate surface enhanced Raman scattering (SERS) substrates with controlled micro-nanohierarchy are often complex and expensive. In this study, we demonstrate a simple and cost effective method to fabricate SERS substrates with complex geometries. Microworking robot structuration is used to pattern a polypropylene (PP) substrate with micropits, facilitating protective microenvironment for brittle SiO2 inverse opal (IO) structure. Hierarchical SiO2 IO patterns were obtained using polystyrene (PS) spheres as a sacrificial template, and were selectively embedded into the hydrophilized PP micropits. The same microworking robot technique was subsequently used to deposit silver nanoparticle ink into the SiO2 IO cavities. The fabricated multi-level micro-nanohierarchy surface was studied to enhance Raman scattering of the 4-aminothiophenol (4-ATP) analyte molecule. The results show that the SERS performance of the micro-nanohierarchical substrate increases significantly the Raman scattering intensity compared to substrates with structured 2D surface geometries.

Photoluminescence analysis of Ce3+:Zn2SiO4 & Li++ Ce3+:Zn2SiO4: phosphors by a sol-gel method

Science.gov (United States)

Babu, B. Chandra; Vandana, C. Sai; Guravamma, J.; Rudramadevi, B. Hemalatha; Buddhudu, S.

2015-06-01

Here, we report on the development and photoluminescence analysis of Zn2SiO4, Ce3+:Zn2SiO4 & Li+ + Ce3+: Zn2SiO4 novel powder phosphors prepared by a sol-gel technique. The total amount of Ce3+ ions was kept constant in this experiment at 0.05 mol% total doping. The excitation and emission spectra of undoped (Zn2SiO4) and Ce3+ doped Zn2SiO4 and 0.05 mol% Li+ co-doped samples have been investigated. Cerium doped Zn2SiO4 powder phosphors had broad blue emission corresponding to the 2D3/2→2FJ transition at 443nm. Stable green-yellow-red emission has been observed from Zn2SiO4 host matrix and also we have been observed the enhanced luminescence of Li+ co-doped Zn2SiO4:Ce3+. Excitation and emission spectra of these blue luminescent phosphors have been analyzed in evaluating their potential as luminescent screen coating phosphors.

A comparative study on omnidirectional anti-reflection SiO2 nanostructure films coating by glancing angle deposition

Science.gov (United States)

Prachachet, R.; Samransuksamer, B.; Horprathum, M.; Eiamchai, P.; Limwichean, S.; Chananonnawathorn, C.; Lertvanithphol, T.; Muthitamongkol, P.; Boonruang, S.; Buranasiri, P.

2018-02-01

Fabricated omnidirectional anti-reflection nanostructure films as a one of the promising alternative solar cell applications have attracted enormous scientific and industrial research benefits to their broadband, effective over a wide range of incident angles, lithography-free and high-throughput process. Recently, the nanostructure SiO2 film was the most inclusive study on anti-reflection with omnidirectional and broadband characteristics. In this work, the three-dimensional silicon dioxide (SiO2) nanostructured thin film with different morphologies including vertical align, slant, spiral and thin films were fabricated by electron beam evaporation with glancing angle deposition (GLAD) on the glass slide and silicon wafer substrate. The morphological of the prepared samples were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The transmission, omnidirectional and birefringence property of the nanostructure SiO2 films were investigated by UV-Vis-NIR spectrophotometer and variable angle spectroscopic ellipsometer (VASE). The spectrophotometer measurement was performed at normal incident angle and a full spectral range of 200 - 2000 nm. The angle dependent transmission measurements were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. This study demonstrates that the obtained SiO2 nanostructure film coated on glass slide substrate exhibits a higher transmission was 93% at normal incident angle. In addition, transmission measurement in visible wavelength and wide incident angles -80 to 80 were increased in comparison with the SiO2 thin film and glass slide substrate due to the transition in the refractive index profile from air to the nanostructure layer that improve the antireflection characteristics. The results clearly showed the enhanced omnidirectional and broadband characteristic of the three dimensional SiO

Liquid-phase-deposited SiO2 on AlGaAs and its application

International Nuclear Information System (INIS)

Lee, Kuan-Wei; Huang, Jung-Sheng; Lu, Yu-Lin; Lee, Fang-Ming; Lin, Hsien-Cheng; Huang, Jian-Jun; Wang, Yeong-Her

2011-01-01

The silicon dioxide (SiO 2 ) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO 2 film deposition rate is about 67 nm h −1 for the first hour. The leakage current density is about 1.21 × 10 −6 A cm −2 at 1 MV cm −1 . The interface trap density (D it ) and the flat-band voltage shift (ΔV FB ) are 1.28 × 10 12 cm −2 eV −1 and 0.5 V, respectively. After rapid thermal annealing in the N 2 ambient at 300 °C for 1 min, the leakage current density, D it , and ΔV FB can be improved to 4.24 × 10 −7 A cm −2 at 1 MV cm −1 , 1.7 × 10 11 cm −2 eV −1 , and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO 2 film to the AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor

Formation of radiative centers in SiO2 by tin high-dose implantation

International Nuclear Information System (INIS)

Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Mil'chanin, O.V.; Mokhovikov, M.A.; Wendler, E.; Wesch, W.

2013-01-01

The structural transformations in SiO 2 layers implanted with high fluence of Sn ions have been investigated. It has been found that post-implantation annealing results in the β-Sn precipitation as well as the formation of SnO 2 -enriched regions in SiO 2 :Sn matrix. The intensive emission in the range of photon energies 1.5 – 3.5 eV is registered for the implanted and annealed samples. We attribute it to the oxygen deficiency centers created in the SiO 2 :Sn matrix and at the 'nanocluster/SiO 2 ' interfaces. (authors)

Synthesis of metallic nanoparticles in SiO2 matrices

International Nuclear Information System (INIS)

Gutierrez W, C.; Mondragon G, G.; Perez H, R.; Mendoza A, D.

2004-01-01

Metallic nanoparticles was synthesized in SiO 2 matrices by means of a process of two stages. The first one proceeded via sol-gel, incorporating the metallic precursors to the reaction system before the solidification of the matrix. Later on, the samples underwent a thermal treatment in atmosphere of H 2 , carrying out the reduction of the metals that finally formed to the nanoparticles. Then it was detected the presence of smaller nanoparticles than 20 nm, dispersed and with the property of being liberated easily of the matrix, conserving a free surface, chemically reactive and with response to external electromagnetic radiation. The system SiO 2 -Pd showed an important thermoluminescent response. (Author)

Combined RBS and TEM characterization of nano-SiGe layers embedded in SiO2

International Nuclear Information System (INIS)

Kling, A.; Ortiz, M.I.; Sangrador, J.; Rodriguez, A.; Rodriguez, T.; Ballesteros, C.; Soares, J.C.

2006-01-01

Grazing incidence RBS has been tested as a technique to detect and characterize SiGe nanoparticles embedded in a SiO 2 matrix. Suitable structures were deposited by low pressure chemical vapour deposition and characterized by TEM and RBS. The layers containing nanoparticles have been modelled by stacks of sublayers consisting of SiGeO layers with compositions calculated according to presumed shapes, sizes, Si/Ge ratios and particle area densities and used as input for RUMP. The nanoparticle parameters obtained by fitting the experimental RBS spectra agree well with the findings by TEM. This demonstrates that RBS is a useful and fast technique to characterize this kind of structures

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

Science.gov (United States)

Truyen, Nguyen Xuan; Ohta, Akio; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

2018-01-01

The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ∼5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.

Dependence of Photocatalytic Activity of TiO2-SiO2 Nanopowders

Directory of Open Access Journals (Sweden)

M. Riazian

2014-10-01

Full Text Available Structural properties and chemical composition change the photocatalytic activity in TiO2-SiO2 nanopowder composite. The SiO2-TiO2 nanostructure is synthesized based on sol–gel method. The nanoparticles are characterized by x-ray fluorescents (XRF, x- ray diffraction (XRD, tunneling electron microscopy (TEM, field emission scanning electron microscopy (FE-SEM, UV-vis. Spectrophotometer and furrier transmission create infrared absorption (FTIR techniques. The rate constant k for the degradation of methylen blue in its aqueous solution under UV irradiation is determined as a measure of photocatalytic activity. Dependence between photocatalytic activity and SiO2 content in the composite is determined. Rate constant k is found dependent on the content of SiO2 in the composite that calcined at 900 oC. The addition of low composition SiO2 to the TiO2 matrix (lower than 45% enhances the photocatalytic activity due to thermal stability and increasing in the surface area. The effects of chemical compositions on the surface topography and the crystallization of phases are studied.

Influence of SiO2 Addition on Properties of PTFE/TiO2 Microwave Composites

Science.gov (United States)

Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren

2018-01-01

Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (ceramic particles served as barriers and improved the thermal stability of the PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

Science.gov (United States)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

International Nuclear Information System (INIS)

Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

2009-01-01

We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

Science.gov (United States)

Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

2017-02-01

Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

International Nuclear Information System (INIS)

Brillson, L. J.; Young, A. P.; White, B. D.; Schaefer, J.; Niimi, H.; Lee, Y. M.; Lucovsky, G.

2000-01-01

Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO 2 deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas processing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-semiconductor junctions. (c) 2000 American Vacuum Society

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

Science.gov (United States)

Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

2017-09-13

Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.

Self assembly of SiO2-encapsulated carbon microsphere composites

International Nuclear Information System (INIS)

Yang Yongzhen; Song Jingjing; Han Yanxing; Guo Xingmei; Liu Xuguang; Xu Bingshe

2011-01-01

SiO 2 was firstly coated onto the surface of carbon microspheres (CMSs) using tetraethyl orthosilicate (TEOS) as precursor by Stoeber method. Then SiO 2 -encapsulated CMS (CMS-SiO 2 ) composites were self-assembled by vertical deposition, in which the effects of deposition temperature and suspension concentration on the quality of self-assembling film were investigated. Morphologies and structures of the samples were characterized by field emission scanning electron microscopy, Fourier transformation infrared spectrometry, X-ray diffraction and thermogravimetry. The results show that uniform CMS-SiO 2 composites with good mono-dispersion were prepared by Stober method with 0.5 g of CMSs, 2 mL of TEOS, 30 mL of ammonia and 12 h of reaction time, the CMSs-based films with ordered and denser structure were prepared by vertical deposition using CMS-SiO 2 composites as monodipersion spheres under suspension concentration of 1 wt% and deposition temperature of 50 deg. C. The ultraviolet-visible absorption measurement shows that the absorbance of CMS-SiO 2 composite films grew steadily with increasing suspension concentration.

Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

Science.gov (United States)

Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

2018-03-01

In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO2 Gate Dielectric

DEFF Research Database (Denmark)

Lauritzen, Andreas E.; Torkkeli, Mika; Bikondoa, Oier

2018-01-01

We report on the structure and morphology of 5,5′-bis(naphth-2-yl)-2,2′-bithiophene (NaT2) films in bottom-contact organic field-effect transistors (OFETs) with octadecyltrichlorosilane (OTS) coated SiO2 gate dielectric, characterized by atomic force microscopy (AFM), grazing-incidence X......-ray diffraction (GIXRD), and electrical transport measurements. Three types of devices were investigated with the NaT2 thin-film deposited either on (1) pristine SiO2 (corresponding to higher surface energy, 47 mJ/m2) or on OTS deposited on SiO2 under (2) anhydrous or (3) humid conditions (corresponding to lower...... surface energies, 20–25 mJ/m2). NaT2 films grown on pristine SiO2 form nearly featureless three-dimensional islands. NaT2 films grown on OTS/SiO2 deposited under anhydrous conditions form staggered pyramid islands where the interlayer spacing corresponds to the size of the NaT2 unit cell. At the same time...

Enhanced Photocatalytic Activity of ZrO2-SiO2 Nanoparticles by Platinum Doping

Directory of Open Access Journals (Sweden)

Mohammad W. Kadi

2013-01-01

Full Text Available ZrO2-SiO2 mixed oxides were prepared via the sol-gel method. Photo-assisted deposition was utilized for doping the prepared mixed oxide with 0.1, 0.2, 0.3, and 0.4 wt% of Pt. XRD spectra showed that doping did not result in the incorporation of Pt within the crystal structure of the material. UV-reflectance spectrometry showed that the band gap of ZrO2-SiO2 decreased from 3.04 eV to 2.48 eV with 0.4 wt% Pt doping. The results show a specific surface area increase of 20%. Enhanced photocatalysis of Pt/ZrO2-SiO2 was successfully tested on photo degradation of cyanide under illumination of visible light. 100% conversion was achieved within 20 min with 0.3 wt% of Pt doped ZrO2-SiO2.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2015-01-01

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

Highly efficient transparent Zn2SiO4:Mn2+ phosphor film on quartz glass

International Nuclear Information System (INIS)

Seo, K.I.; Park, J.H.; Kim, J.S.; Kim, G.C.; Yoo, J.H.

2009-01-01

Highly efficient transparent Zn 2 SiO 4 :Mn 2+ film phosphors on quartz substrates were deposited by the thermal diffusion of sputtered ZnO:Mn film. They show a textured structure with some preferred orientations. Our film phosphor shows, for the best photoluminescence (PL) brightness, a green PL brightness of about 20% of a commercial Zn 2 SiO 4 :Mn 2+ powder phosphor screen. The film shows a high transmittance of more than 10% at the red-color region. The excellence in PL brightness and transmittance can be explained in terms of the textured crystal growth with a continuous gradient of Zn 2 SiO 4 : Mn 2+ crystals.

Manufacturing and investigation of surface morphology and optical properties of composite thin films reinforced by TiO2, Bi2O3 and SiO2 nanoparticles

Science.gov (United States)

Jarka, Paweł; Tański, Tomasz; Matysiak, Wiktor; Krzemiński, Łukasz; Hajduk, Barbara; Bilewicz, Marcin

2017-12-01

The aim of submitted paper is to present influence of manufacturing parameters on optical properties and surface morphology of composite materials with a polymer matrix reinforced by TiO2 and SiO2 and Bi2O3 nanoparticles. The novelty proposed by the authors is the use of TiO2 and SiO2 and Bi2O3 nanoparticles simultaneously in polymeric matrix. This allows using the combined effect of nanoparticles to a result composite material. The thin films of composite material were prepared by using spin-coating method with various spinning rates from solutions of different concentration of nanoparticles. In order to prepare the spinning solution polymer, Poly(methyl methacrylate) (PMMA) was used as a matrix. The reinforcing phase was the mixture of the nanoparticles of SiO2, TiO2 and B2O3. In order to identify the surface morphology of using thin films and arrangement of the reinforcing phase Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) were used. In order to study the optical properties of the obtained thin films, the thin films of composites was subjected to an ellipsometry analysis. The measurements of absorbance of the obtained materials, from which the value of the band gap width was specified, were carried out using the UV/VIS spectroscopy. The optical properties of obtain composite thin films depend not only on the individual components used, but also on the morphology and the interfacial characteristics. Controlling the participation of three kinds of nanoparticles of different sizes and optical parameters allows to obtaining the most optimal optical properties of nanocomposites and also controlling the deposition parameters allows to obtaining the most optimal surface morphology of nanocomposites.

Magnetic properties of Mn-oxide nanoparticles dispersed in an amorphous SiO2 matrix

Science.gov (United States)

Milivojević, D.; Babić-Stojić, B.; Jokanović, V.; Jagličić, Z.; Makovec, D.

2011-03-01

Samples of Mn-oxide nanoparticles dispersed in an amorphous SiO2 matrix with manganese concentration 0.7 and 3 at% have been synthesized by a sol-gel method. Transmission electron microscopy analysis has shown that the samples contain agglomerates of amorphous silica particles 10-20 nm in size. In silica matrix two types of Mn-rich particles are dispersed, smaller nanoparticles with dimensions between 3 and 10 nm, and larger crystalline areas consisting of aggregates of the smaller nanoparticles. High-temperature magnetic susceptibility study reveals that dominant magnetic phase at higher temperatures is λ-MnO2. At temperatures below TC=43 K strong ferrimagnetism originating from the minor Mn3O4 phase masks the relatively weak magnetism of λ-MnO2 with antiferromagnetic interactions. Magnetic field dependence of the maximum in the zero-field-cooled magnetization for both the samples in the vicinity of 40 K, and a frequency shift of the real component of the ac magnetic susceptibility in the sample with 3 at% Mn suggest that the magnetic moments of the smaller Mn3O4 nanoparticles with dimensions below 10 nm are exposed to thermally activated blocking process just below the Curie temperature TC. Appearance of a maximum in the zero-field-cooled magnetization for both the samples below 10 K indicates possible spin glass freezing of the magnetic moments at low temperatures which might occur in the geometrically frustrated Mn sublattice of the λ-MnO2 crystal structure.

Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

KAUST Repository

Dolui, Kapildeb

2013-04-02

Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

Microstructure and Transparent Super-Hydrophobic Performance of Vacuum Cold-Sprayed Al2O3 and SiO2 Aerogel Composite Coating

Science.gov (United States)

Li, Jie; Zhang, Yu; Ma, Kai; Pan, Xi-De; Li, Cheng-Xin; Yang, Guan-Jun; Li, Chang-Jiu

2018-02-01

In this study, vacuum cold spraying was used as a simple and fast way to prepare transparent super-hydrophobic coatings. Submicrometer-sized Al2O3 powder modified by 1,1,2,2-tetrahydroperfluorodecyltriethoxysilane and mixed with hydrophobic SiO2 aerogel was employed for the coating deposition. The deposition mechanisms of pure Al2O3 powder and Al2O3-SiO2 mixed powder were examined, and the effects of powder structure on the hydrophobicity and light transmittance of the coatings were evaluated. The results showed that appropriate contents of SiO2 aerogel in the mixed powder could provide sufficient cushioning to the deposition of submicrometer Al2O3 powder during spraying. The prepared composite coating surface showed rough structures with a large number of submicrometer convex deposited particles, characterized by being super-hydrophobic. Also, the transmittance of the obtained coating was higher than 80% in the range of visible light.

Effect of a SiO2 buffer layer on the characteristics of In2O3-ZnO-SnO2 films deposited on PET substrates

International Nuclear Information System (INIS)

Woo, B.-J.; Hong, J.-S.; Kim, S.-T.; Kim, H.-M.; Park, S.-H.; Kim, J.-J.; Ahn, J.-S.

2006-01-01

Transparent and conducting In 2 O 3 -ZnO-SnO 2 (IZTO) thin films were prepared on flexible PET substrates at room temperature by using an ion-gun-assisted sputtering technique. We mainly investigated the effect of a SiO 2 buffer layer, deposited in-between the film and the PET substrate, on the electrical stability of the film under various external stresses caused by moist-heat or violent temperature variations. The insertion of the SiO 2 layer improves structural, optical and electrical properties of the films: The IZTO/SiO 2 /PET film with a buffer shows a change (∼4 %) in the sheet resistance much smaller than that of the IZTO/PET film without a buffer (∼22 %), against a severe thermal stress of the repeated processes between quenching at -25 .deg. C and annealing at 100 .deg. C for 5 min at each process. Under a moist-heat stress at 90 % relative humidity at 80 .deg. C, the IZTO/SiO 2 /PET film responds with only a slight change (∼8.5 %) in the sheet resistance from 30.2 to 33.0 Ω/□ after being exposed for 240 h. The enhanced stability is understood to be the result of the buffer layers acting as a blocking barrier to water vapor or organic solvents diffusing from the PET substrate during deposition or annealing.

Noise measurements on NbN thin films with a negative temperature resistance coefficient deposited on sapphire and on SiO2

NARCIS (Netherlands)

Leroy, G.; Gest, J.; Vandamme, L.K.J.; Bourgeois, O.

2007-01-01

We characterize granular NbNx thin cermet films deposited on either sapphire substrate or on SiO2 and compare the 1/f noise at 300 K and 80 K. The films were characterized with an impedance analyzer from 20 Hz to 1 MHz and analyzed as a resistor R in parallel with a capacitor C. The calculated noise

Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

Science.gov (United States)

Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

2018-01-01

We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

DEFF Research Database (Denmark)

Pankratov, V.; Osinniy, Viktor; Kotlov, A.

2011-01-01

done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

International Nuclear Information System (INIS)

Yao Jianke; Xu Cheng; Ma Jianyong; Fang Ming; Fan Zhengxiu; Jin Yunxia; Zhao Yuanan; He Hongbo; Shao Jianda

2009-01-01

TiO 2 single layers and TiO 2 /SiO 2 high reflectors (HR) are prepared by electron beam evaporation at different TiO 2 deposition rates. It is found that the changes of properties of TiO 2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation.

Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

Science.gov (United States)

Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

2018-04-01

We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

International Nuclear Information System (INIS)

Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

2006-01-01

Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

Science.gov (United States)

Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram

2018-03-01

We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

Transfer free graphene growth on SiO2 substrate at 250 °C

Science.gov (United States)

Vishwakarma, Riteshkumar; Rosmi, Mohamad Saufi; Takahashi, Kazunari; Wakamatsu, Yuji; Yaakob, Yazid; Araby, Mona Ibrahim; Kalita, Golap; Kitazawa, Masashi; Tanemura, Masaki

2017-03-01

Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

International Nuclear Information System (INIS)

Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

2005-01-01

Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates.

Science.gov (United States)

da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

2015-06-25

Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.

Crystallization kinetics of BaO-Al2O3-SiO2 glasses

Science.gov (United States)

Bansal, Narottam P.; Hyatt, Mark J.

1989-01-01

Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

Morphology of SiO2 films as a key factor in alignment of liquid crystals with negative dielectric anisotropy

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Volodymyr Tkachenko

2016-11-01

Full Text Available Control of liquid crystal (LC orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles.

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

International Nuclear Information System (INIS)

Dhlamini, M.S.; Terblans, J.J.; Ntwaeaborwa, O.M.; Ngaruiya, J.M.; Hillie, K.T.; Botha, J.R.; Swart, H.C.

2008-01-01

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO 2 ) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar + laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 deg. C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

International Nuclear Information System (INIS)

Croci, S.; Pecheur, A.; Autran, J.L.; Vedda, A.; Caccavale, F.; Martini, M.; Spinolo, G.

2001-01-01

Silicon dioxide films have been deposited by plasma-enhanced chemical vapor deposition at low substrate temperature (50 deg. C) in a parallel-plate reactor using hexamethyldisilazane (HMDS), diluted in He, and O 2 as Si and O precursors. The effect of the O 2 /(HMDS+He) flow rate ratio on the oxide properties has been investigated in the range of 0.05-1.25 by means of deposition rate, wet etching rate, secondary ion mass spectrometry, thermally stimulated luminescence, and high frequency capacitance-voltage measurements. Both the deposition rate and the etching rate increase by increasing the O 2 /(HMDS+He) flow rate ratio and reach a constant value at flow rate ratios higher than 0.6. The strong increase and saturation in the deposition rate can be attributed to the impinging oxide atoms flux and to the consumption of silyl radicals at the deposition surface, respectively. The Si/SiO 2 interface state density and the positive fixed charge density are in the range 1x10 11 -1x10 12 eV -1 cm -2 and 6x10 11 -1.5x10 12 C cm -2 , respectively. These concentrations are comparable with literature data concerning SiO 2 films obtained by plasma enhanced chemical vapor deposition at temperatures higher than 200 deg. C using other Si precursors. Moreover, the interface state density decreases while the fixed oxide charge increases by increasing the O 2 /(HMDS+He) flow rate ratio. A correlation has been found between defects monitored by thermally stimulated luminescence and fixed oxide charges. From a comparison with secondary ion mass spectrometry results, the fixed oxide charges can be preliminarily attributed to intrinsic defects

Target swapping in PLD: An efficient approach for CdS/SiO2 and CdS:Ag(1%)/SiO2 nanocomposite thin films with enhanced luminescent properties

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2017-01-01

A novel synthesis method for luminescent and by-products (like CdO) free CdS/SiO 2 and CdS:Ag(1%)/SiO 2 (i.e. 1%Ag doped CdS/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS, CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency ratio of 2:8 laser pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (i.e. 2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS/ CdS:Ag(1%) nanocrystals in nanocomposite systems after annealing at 500 °C. Highly intense and broad red emission is achieved from CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiencies of emission from pristine CdS:SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites are found to be enhanced by approximately two times as compared to sole nanocrystalline CdS and CdS:Ag(1%) thin films respectively and further enhanced upto 7 times on annealing the nanocomposite systems at 500 °C. - Graphical abstract: A modified synthesis method for luminescent and by-products (like CdO) free undoped &1% Ag doped CdS/SiO 2 (deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS or CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency of 2:8 pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS nanocrystals in nanocomposite systems after annealing at 500 °C. Intense and broad red emission is achieved from deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiency of

A novel coating material that uses nano-sized SiO2 particles to intensify hydrophobicity and corrosion protection properties

International Nuclear Information System (INIS)

Ammar, Sh.; Ramesh, K.; Vengadaesvaran, B.; Ramesh, S.; Arof, A.K.

2016-01-01

Highlights: • Hybrid SiO 2 nanocomposite coatings were fabricated on mild steel. • Highest coating resistance were exhibited by coatings with 3 wt.% SiO 2 nanoparticles. • Long-term stability measurement, together with hydrophobic surface measurements, were obtained. - Abstract: The influence of SiO 2 nanoparticles on hydrophobicity and the corrosion protection capabilities of hybrid acrylic-silicone polymeric matrix have been investigated. Contact angle measurements (CA), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectroscopy (EDX) were used to study the hydrophobicity, morphology, and topography of the coatings. In addition, electrochemical impedance spectroscopy (EIS) and salt spray techniques were employed to evaluate the corrosion protection performance. A coating with 3 wt.% SiO 2 , AS 3, demonstrates significant improvement in corrosion resistance with the highest measured CA of 97.3°. Morphology and topography studies clarify the influence of nano-sized SiO 2 fillers on the surface topography and demonstrated the uniform and good distribution of the embedded SiO 2 nanoparticles within the polymeric matrix.

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

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Jung-Hoon Yu

2016-07-01

Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.

Seed-mediated photodeposition route to Ag-decorated SiO2@TiO2 microspheres with ideal core-shell structure and enhanced photocatalytic activity

Science.gov (United States)

Ma, Jianqi; Guo, Xiaohua; Ge, Hongguang; Tian, Guanghui; Zhang, Qiang

2018-03-01

Ag-decorated SiO2@TiO2 microspheres (SiO2@TiO2-Ag) with ideal core-shell structure and enhanced photocatalytic activity were successfully fabricated by combining both coating anatase TiO2 on the surface of SiO2 spheres and subsequent depositing face-centered cubic Ag nanoparticles (NPs) on the coated TiO2 surface via novel sol-gel method and Ag-seed-mediated photodeposition (PD) route, respectively. The morphology, structure, composition and optical properties of the resulting composites were characterized in detail. The results reveal that the monodisperse SiO2 spheres of ∼260 nm were covered uniformly and perfectly by the TiO2 nanoparticle coating layer with the thickness of ca. 55 nm by the novel sol-gel method. Further, homogeneously and highly dispersed Ag NPs with an average size of 8 ± 1.5 nm were strongly anchored onto the TiO2 surface in SiO2@TiO2 core-shell spheres by the modified PD process (Ag-seed-mediated PD route), whereas polydispersed Ag aggregates and detached Ag NPs were irregularly deposited over the TiO2 surface in previous works, which is the inherent problem and has not been effectively solved for depositing noble metal NPs such as Au, Ag, Pt, Pd on TiO2 surface by conventional PD method. The formation mechanism of small and uniformly dispersed Ag NPs with narrow size distribution via the modified PD method is tentatively explained by both nucleation kinetics and growth kinetics. The key reason is that the pre-deposited seeds firmly tethered on SiO2@TiO2 spheres served as nucleation sites and anchoring points for the further nucleation and subsequent growth of Ag via photoreduction of Ag+.

Characterization of the implantation damage in SiO2 with x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Ajioka, T.; Ushio, S.

1986-01-01

X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO 2 by ion implantation. By measuring the peak width of Si/sub 2p/ from SiO 2 which corresponds to perturbation of the SiO 2 network, good depth profiles of the damage have been obtained for implanted samples and subsequently annealed samples. The results show that the damage distributed more widely than that calculated from energy deposition and that the perturbation of the network is caused not only by radiation damage but also by the existence of impurities in the network. It has been found that the XPS method is effective to understand the atomic structure, and thus, electrical properties of SiO 2

Preparation and characterization of silane-modified SiO2 particles reinforced resin composites with fluorinated acrylate polymer.

Science.gov (United States)

Liu, Xue; Wang, Zengyao; Zhao, Chengji; Bu, Wenhuan; Na, Hui

2018-04-01

A series of fluorinated dental resin composites were prepared with two kinds of SiO 2 particles. Bis-GMA (bisphenol A-glycerolate dimethacrylate)/4-TF-PQEA (fluorinated acrylate monomer)/TEGDMA (triethylene glycol dimethacrylate) (40/30/30, wt/wt/wt) was introduced as resin matrix. SiO 2 nanopartices (30nm) and SiO 2 microparticles (0.3µm) were silanized with 3-methacryloxypropyl trimethoxysilane (γ-MPS) and used as fillers. After mixing the resin matrix with 0%, 10%, 20%, 30% SiO 2 nanopartices and 0%, 10%, 20%, 30%, 40%, 50% SiO 2 microparticles, respectively, the fluorinated resin composites were obtained. Properties including double bond conversion (DC), polymerization shrinkage (PS), water sorption (W p ), water solubility (W y ), mechanical properties and cytotoxicity were investigated in comparison with those of neat resin system. The results showed that, filler particles could improve the overall performance of resin composites, particularly in improving mechanical properties and reducing PS of composites along with the addition of filler loading. Compared to resin composites containing SiO 2 microparticles, SiO 2 nanoparticles resin composites had higher DC, higher mechanical properties, lower PS and lower W p under the same filler content. Especially, 50% SiO 2 microparticles reinforced resins exhibited the best flexural strength (104.04 ± 7.40MPa), flexural modulus (5.62 ± 0.16GPa), vickers microhardness (37.34 ± 1.13 HV), compressive strength (301.54 ± 5.66MPa) and the lowest polymerization (3.42 ± 0.22%). Copyright © 2018 Elsevier Ltd. All rights reserved.

Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

International Nuclear Information System (INIS)

Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2017-01-01

Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

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Zhuk Sergey I.

2017-01-01

Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

Bioactivity and mineralization of hydroxyapatite with bioglass as sintering aid and bioceramics with Na3Ca6(PO4)5 and Ca5(PO4)2SiO4 in a silicate matrix

International Nuclear Information System (INIS)

Demirkiran, Hande; Mohandas, Arunesh; Dohi, Motokazi; Fuentes, Alonso; Nguyen, Kytai; Aswath, Pranesh

2010-01-01

Hydroxyapatite and Bioglass-45S5 were sintered together creating new ceramic compositions that yielded increased apatite deposition and osteoblast differentiation and proliferation in vitro compared to hydroxyapatite. The sintered products characterized by X-ray diffraction, revealed hydroxyapatite as the main phase when small quantities (1, 2.5 and 5 wt.%) of bioglass was added. Bioglass behaved as a sintering aid with β-TCP (Ca 3 (PO 4 ) 2 ) being the minor phase. The amount of β-TCP increased with the amount of bioglass added. In compositions with larger additions of bioglass (10 and 25 wt.%), new phases with compositions of calcium phosphate silicate (Ca 5 (PO 4 ) 2 SiO 4 ) and sodium calcium phosphate (Na 3 Ca 6 (PO 4 ) 5 ) were formed respectively within amorphous silicate matrices. In vitro cell culture studies of the ceramic compositions were examined using bone marrow stromal cell (BMSC). Cell proliferation and differentiation of bone marrow stromal cells into osteoblasts were determined by Pico Green DNA assays and alkaline phosphatase (ALP) activity, respectively. All hydroxyapatite-bioglass co-sintered ceramics exhibited larger cell proliferation compared to pure hydroxyapatite samples. After 6 days in cell culture, the ceramic with Ca 5 (PO 4 ) 3 SiO 4 in a silicate matrix formed by reacting hydroxyapatite with 10 wt.% bioglass exhibited the maximum proliferation of the BMSC's. The ALP activity was found to be largest in the ceramic with Na 3 Ca 6 (PO 4 ) 5 embedded in a silicate matrix synthesized by reacting hydroxyapatite with 25 wt.% bioglass.

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Science.gov (United States)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Structure and crystallization of SiO2 and B2O3 doped lithium disilicate glasses from theory and experiment.

Science.gov (United States)

Erlebach, Andreas; Thieme, Katrin; Sierka, Marek; Rüssel, Christian

2017-09-27

Solid solutions of SiO 2 and B 2 O 3 in Li 2 O·2SiO 2 are synthesized and characterized for the first time. Their structure and crystallization mechanisms are investigated employing a combination of simulations at the density functional theory level and experiments on the crystallization of SiO 2 and B 2 O 3 doped lithium disilicate glasses. The remarkable agreement of calculated and experimentally determined cell parameters reveals the preferential, kinetically controlled incorporation of [SiO 4 ] and [BO 4 ] at the Li + lattice sites of the Li 2 O·2SiO 2 crystal structure. While the addition of SiO 2 increases the glass viscosity resulting in lower crystal growth velocities, glasses containing B 2 O 3 show a reduction of both viscosities and crystal growth velocities. These observations could be rationalized by a change of the chemical composition of the glass matrix surrounding the precipitated crystal phase during the course of crystallization, which leads to a deceleration of the attachment of building units required for further crystal growth at the liquid-crystal interface.

Metabolomic effects of CeO2, SiO2 and CuO metal oxide nanomaterials on HepG2 cells

Data.gov (United States)

U.S. Environmental Protection Agency — The data set is a matrix of cellular biochemical (metabolites) in HepG2 cells treated with various metal oxide nanomaterials composed of CeO2, SiO2 and CuO. This...

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

International Nuclear Information System (INIS)

Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

2007-01-01

Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

Spontaneous dissociation of Co2(CO8 and autocatalytic growth of Co on SiO2: A combined experimental and theoretical investigation

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Kaliappan Muthukumar

2012-07-01

Full Text Available We present experimental results and theoretical simulations of the adsorption behavior of the metal–organic precursor Co2(CO8 on SiO2 surfaces after application of two different pretreatment steps, namely by air plasma cleaning or a focused electron beam pre-irradiation. We observe a spontaneous dissociation of the precursor molecules as well as autodeposition of cobalt on the pretreated SiO2 surfaces. We also find that the differences in metal content and relative stability of these deposits depend on the pretreatment conditions of the substrate. Transport measurements of these deposits are also presented. We are led to assume that the degree of passivation of the SiO2 surface by hydroxyl groups is an important controlling factor in the dissociation process. Our calculations of various slab settings, using dispersion-corrected density functional theory, support this assumption. We observe physisorption of the precursor molecule on a fully hydroxylated SiO2 surface (untreated surface and chemisorption on a partially hydroxylated SiO2 surface (pretreated surface with a spontaneous dissociation of the precursor molecule. In view of these calculations, we discuss the origin of this dissociation and the subsequent autocatalysis.

Nano-structure formation of Fe-Pt perpendicular magnetic recording media co-deposited with MgO, Al2O3 and SiO2 additives

International Nuclear Information System (INIS)

Safran, G.; Suzuki, T.; Ouchi, K.; Barna, P.B.; Radnoczi, G.

2006-01-01

Perpendicular magnetic recording media samples were prepared by sputter deposition on sapphire with a layer sequence of MgO seed-layer/Cr under-layer/FeSi soft magnetic under-layer/MgO intermediate layer/FePt-oxide recording layer. The effects of MgO, Al 2 O 3 and SiO 2 additives on the morphology and orientation of the FePt layer were investigated by transmission electron microscopy. The samples exhibited (001) orientation of the L1 FePt phase with the mutual orientations of sapphire substrate//MgO(100)[001]//Cr(100)[11-bar0]//FeSi(100)[11-bar0]//MgO(100) [001]//FePt(001)[100]. The morphology of the FePt films varied due to the co-deposited oxides: The FePt layers were continuous and segmented by stacking faults aligned at 54 o to the surface. Films with SiO 2 addition, beside the oriented columnar FePt grains, exhibited a fraction of misoriented crystallites due to random repeated nucleation. Al 2 O 3 addition resulted in a layered structure, i.e. an initial continuous epitaxial FePt layer covered by a secondary layer of FePt-Al 2 O 3 composite. Both components (FePt and MgO) of the MgO-added samples were grown epitaxially on the MgO intermediate layer, so that a nano-composite of intercalated (001) FePt and (001) MgO was formed. The revealed microstructures and formation mechanisms may facilitate the improvement of the structural and magnetic properties of the FePt-oxide composite perpendicular magnetic recording media

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

International Nuclear Information System (INIS)

Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

2003-01-01

Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

Science.gov (United States)

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

The Role of SiO2 Gas in the Operation of Anti-Corrosion Coating Produced by PVD

Directory of Open Access Journals (Sweden)

Meysam Zarchi

2015-09-01

Full Text Available This study examined theSiO2 gas present in the coatings used in corrosion industry.These layers have been created by physical vapor deposition (PVD, with an appropriate performance. Sublimation of SiO2is used to protect PVD aluminum flakes from water corrosionand to generate highly porous SiO2 flakes with holes in the nanometer range. SiOx/Al/SiOx sandwiches were made as well as Ag loaded porous SiO2 as antimicrobial filler.

Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

CERN Document Server

Wu, X L; Tang, N; Deng, S S; Bao, X M

2003-01-01

LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics

Science.gov (United States)

Dong, Yibo; Xie, Yiyang; Xu, Chen; Li, Xuejian; Deng, Jun; Fan, Xing; Pan, Guanzhong; Wang, Qiuhua; Xiong, Fangzhu; Fu, Yafei; Sun, Jie

2018-02-01

A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO2. Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.

Enhanced antioxidation and microwave absorbing properties of SiO2-coated flaky carbonyl iron particles

Science.gov (United States)

Zhou, Yingying; Xie, Hui; Zhou, Wancheng; Ren, Zhaowen

2018-01-01

SiO2 was successfully coated on the surface of flaky carbonyl iron particles using a chemical bath deposition method in the presence of 3-aminopropyl triethoxysilane (APTES). The morphologies, composition, valence states of elements, as well as antioxidation and electromagnetic properties of the samples were characterized by scanning electron microscope (SEM), energy dispersive spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG) and microwave network analyzer. TG curve shows the obvious weight gain of carbonyl iron was deferred to 360 °C after SiO2-coated, which can be ascribed to the exits of SiO2 overlayer. Compared with the raw carbonyl iron, SiO2-coated sample shows good wave absorption performance due to its impedance matching. The electromagnetic properties of raw and SiO2-coated carbonyl iron particles were characterized in X band before and after heat treatment at 250 °C for 10 h. It was established that SiO2-coated carbonyl iron demonstrate good thermal stability, indicating SiO2-coating is useful in the usage of microwave absorbers operating at temperature up to 250 °C.

Microwave electromagnetic and absorption properties of SiO2/C core/shell composites plated with metal cobalt

Science.gov (United States)

Shen, Guozhu; Fang, Xumin; Wu, Hongyan; Wei, Hongyu; Li, Jingfa; Li, Kaipeng; Mei, Buqing; Xu, Yewen

2017-04-01

A facile method has been developed to fabricate magnetic core/shell SiO2/C/Co sub-microspheres via the pyrolysis of SiO2/PANI (polyaniline) and electroless plating method. The electromagnetic parameters of these SiO2/C and SiO2/C/Co composites were measured and the microwave reflection loss properties were evaluated in the frequency range of 2-18 GHz. The results show that the dielectric loss of SiO2/C composite increases with the increase of carbonization temperature and the magnetic loss enhances due to the deposition of cobalt on the SiO2/C sub-microspheres. The reflection loss results exhibit that the microwave absorption properties of the SiO2/C/Co composites are more excellent than those of SiO2/C composites for each thickness. The maximum effective absorption bandwidth (reflection loss ≤ -10 dB) arrives at 5.0 GHz (13.0-18 GHz) for SiO2/C/Co composite with 1.5 mm of thickness and the minimum reflection loss value is -24.0 dB at 5.0 GHz with 4.0 mm of thickness. The microwave loss mechanism of the SiO2/C/Co composites was also discussed in this paper.

Adsorption of uranyl in SiO2 porous glass

International Nuclear Information System (INIS)

Benedetto, F. E.; Prado, M. O.

2013-01-01

Vitreous SiO 2 porous matrices can be used in many applications involving the uptake of chemical species on its solid surface. In this work, vitreous silica sponges were prepared from a sodium borosilicate glass manufactured in our laboratory. The product obtained was then separated into phases with subsequent leaching of the soluble phase rich in B and Na. The resulting porous matrices have a specific surface of 35 m2/gr. Adsorption of uranyl ions onto the SiO 2 porous surface was studied to evaluate the use of this material as a filter for treatment of uranium containing water. The effects of contact time, adsorbent mass and equilibrium concentration of solution were studied. The porous adsorbent exhibits a pseudo-second-order kinetic behavior. The sponges with adsorbed uranium were thermally sealed as a way of U immobilization. Retention of uranium was confirmed during the matrix sealing by TGA. Uranium concentration before and after adsorption tests were made by means of ICP-OES. For uranium concentration of 800 ppm, 72 hours contact time and pH of 3.5, the amount of uranium adsorbed was 21.06 ± 0.02 mg U per gram of vitreous porous SiO 2 . (author)

Nucleation of C60 on ultrathin SiO2

Science.gov (United States)

Conrad, Brad; Groce, Michelle; Cullen, William; Pimpinelli, Alberto; Williams, Ellen; Einstein, Ted

2012-02-01

We utilize scanning tunneling microscopy to characterize the nucleation, growth, and morphology of C60 on ultrathin SiO2 grown at room temperature. C60 thin films are deposited in situ by physical vapor deposition with thicknesses varying from <0.05 to ˜1 ML. Island size and capture zone distributions are examined for a varied flux rate and substrate deposition temperature. The C60 critical nucleus size is observed to change between monomers and dimers non-monotonically from 300 K to 500 K. Results will be discussed in terms of recent capture zone studies and analysis methods. Relation to device fabrication will be discussed. doi:10.1016/j.susc.2011.08.020

Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics

Directory of Open Access Journals (Sweden)

Yibo Dong

2018-02-01

Full Text Available A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene “lands onto” SiO2. Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.

Characterization of Ultra thin chromium layers deposited ou to SiO2 using the Le-PIXE and the RB S techniques

International Nuclear Information System (INIS)

Zahraman, K.; Nsouli, B.; Roumie, M.

2007-01-01

In this paper, we demonstrate the ability of the Le-PIXE (Low Energy PIXE) technique, using proton energies < 1 MeV, for the monitoring of the thickness and the thickness uniformity of ultra thin (0.5 nm < t < 20 nm) chromium layers deposited onto quartz substrates. Chromium is a good candidate for obtaining conductive ultra thin layers on insulator substrates such as quartz (SiO2). The resistivity of such layers is highly related to the quality of the deposited chromium film. In order to optimize the deposition process, there is a need for rapid and accurate monitoring of such films (film thickness, thickness uniformity over a big surface...). The acquisition time needed to obtain results with less than 3-4 % precision was 5 minutes for the thinnest layers. The validation for the use of the Le-PIXE technique was checked by means of conventional RB S technique.

MAPLE deposition and characterization of SnO2 colloidal nanoparticle thin films

International Nuclear Information System (INIS)

Caricato, A P; Martino, M; Romano, F; Tunno, T; Valerini, D; Epifani, M; Rella, R; Taurino, A

2009-01-01

In this paper we report on the deposition and characterization of tin oxide (SnO 2 ) nanoparticle thin films. The films were deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. SnO 2 colloidal nanoparticles with a trioctylphosphine capping layer were diluted in toluene with a concentration of 0.2 wt% and frozen at liquid nitrogen temperature. The frozen target was irradiated with a KrF (248 nm, τ = 20 ns) excimer laser (6000 pulses at 10 Hz). The nanoparticles were deposited on silica (SiO 2 ) and (1 0 0) Si substrates and submitted to morphological (high resolution scanning electron microscopy (SEM)), structural Fourier transform infrared spectroscopy (FTIR) and optical (UV-Vis transmission) characterizations. SEM and FTIR analyses showed that trioctylphosphine was the main component in the as-deposited films. The trioctylphosphine was removed after an annealing in vacuum at 400 0 C, thus allowing to get uniform SnO 2 nanoparticle films in which the starting nanoparticle dimensions were preserved. The energy gap value, determined by optical characterizations, was 4.2 eV, higher than the bulk SnO 2 energy gap (3.6 eV), due to quantum confinement effects.

Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

Science.gov (United States)

Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

2017-04-01

Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

Microwave-assisted synthesis of SiO2 nanoparticles and its application on the flame retardancy of poly styrene and poly carbonate nanocomposites

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A. Esmaeili-Bafghi-Karimabad

2015-07-01

Full Text Available Various morphologies of silica nanoparticles were synthesized by a microwave-assisted Pechini method. Silica nanostructures were synthesized via a fast reaction between tetra ethyl ortho silicate and ammonia at presence citric acid and other effective agents in Pechini procedure. Then for preparation of polymer-matrix nanocomposites, SiO2 nanoparticles were added to poly carbonate (PC and poly styrene (PS matrices. Nanostructures were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and Fourier transform infrared (FT-IR. The influence of SiO2 nanostructures on the flame retardancy of the polymeric matrix was studied using UL- 94 analysis. Our results show that the SiO2 nanostructure can enhance the flame retardant property of the poly carbonate matrix. PC shows better flame retardancy compare to poly styrene.

Synthesis and characterization of Yb and Er based monosilicate powders and durability of plasma sprayed Yb2SiO5 coatings on C/C–SiC composites

International Nuclear Information System (INIS)

Khan, Zuhair S.; Zou Binglin; Huang Wenzhi; Fan Xizhi; Gu Lijian; Chen Xiaolong; Zeng Shuibing; Wang Chunjie; Cao Xueqiang

2012-01-01

Highlights: ► Ultra-pure rare-earth monosilicate powders based on Er and Yb have been fabricated by solid-state reaction. ► Spray-drying treatment results in powders with free flowing characteristics and rounded surface morphologies. ► CTEs are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 . ► Plasma spraying has been used to deposit Yb 2 SiO 5 coatings on C/C–SiC substrate. ► Coatings remain strongly intact with the substrate on thermal cycling between ∼400 °C and 1500 °C in gas burner rig experiment. - Abstract: Rare-earth silicates such as Yb 2 SiO 5 and Er 2 SiO 5 are promising environmental barrier coating materials for ceramic matrix composites. In this work, Yb 2 SiO 5 and Er 2 SiO 5 ceramic powders have been synthesized by solid-state reaction using Yb 2 O 3 , Er 2 O 3 and SiO 2 as starting materials. The fabricated powders were subjected to spray drying treatment for subsequent synthesis of coatings by plasma spraying. The spray drying resulted in well-dispersed and spherical powder particles with good flowability. Analytical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), thermogravimetry and differential scanning calorimetry (TGA/DSC) and dilatometry were applied to study the microstructural and thermal characteristics of the powders. Ultra-high purity monosilicate powders formed as a result of heating treatments at 1400 °C in a box furnace for 20 h. TG/DSC revealed the genesis temperatures of the silicate formation (low temperature polymorphs) and also showed that the solid-state reactions to form Yb and Er based monosilicates proceeded without any weight-loss in the tested temperature range. The values of coefficients of thermal expansion (CTE) of the fabricated compounds are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 by dilatometric measurements. Besides these studies, coating formation by plasma spraying of spray-dried Yb 2 SiO 5 powders on the ceramic

Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

2018-05-01

GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

International Nuclear Information System (INIS)

Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

2008-01-01

Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

The ceramic SiO2 and SiO2-TiO2 coatings on biomedical Ti6Al4VELI titanium alloy

International Nuclear Information System (INIS)

Surowska, B.; Walczak, M.; Bienias, J.

2004-01-01

The paper presents the study of intermediate SiO 2 and SiO 2 -TiO 2 sol-gel coatings and dental porcelain coatings on Ti6Al4VELI titanium alloy. Surface microstructures and wear behaviour by pin-on-disc method of the ceramic coatings were investigated. The analysis revealed: (1) a compact, homogeneous SiO 2 and SiO 2 -TiO 2 coating and (2) that intermediate coatings may provide a durable joint between metal and porcelain, and (3) that dental porcelain on SiO 2 and TiO 2 coatings shows high wear resistance. (author)

Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix

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Deepti Maikhuri

2012-03-01

Full Text Available In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework of effective mass approximation, we have studied intraband S-P, and P-D transitions in a singly charged spherical ZnO quantum dot. The optical properties are investigated in terms of the linear and nonlinear photoabsorption coefficient, the change in refractive index, and the third order nonlinear susceptibility and oscillator strengths. Using the parabolic confinement potential of electron in the dot these parameters are studied with the variation of the dot size, and the energy and intensity of incident radiation. The photoionization cross sections are also obtained for the different dot radii from the initial ground state of the dot. It is found that dot size, confinement potential, and incident radiation intensity affects intraband optical properties of the dot significantly.

High-resolution ellipsometric study of an n-alkane film, dotriacontane, adsorbed on a SiO2 surface

DEFF Research Database (Denmark)

Volkmann, U.G.; Pino, M.; Altamirano, L.A.

2002-01-01

-crystal substrates. Our results suggest a model of a solid dotriacontane film that has a phase closest to the SiO2 surface in which the long-axis of the molecules is oriented parallel to the interface. Above this "parallel film" phase, a solid monolayer adsorbs in which the molecules are oriented perpendicular...... at higher coverages. In addition, we have performed high-resolution ellipsometry and stray-light measurements on dotriacontane films deposited from solution onto highly oriented pyrolytic graphite substrates. After film deposition, these substrates proved to be less stable in air than SiO2....

Structure and magnetic properties of granular NiZn-ferrite - SiO2

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Albuquerque Adriana Silva de

1999-01-01

Full Text Available Granular systems composed by nanostructured magnetic materials embedded in a non-magnetic matrix present unique physical properties that depend crucially on their nanostructure. In this work, we have studied the structural and magnetic properties of NiZn-ferrite nanoparticles embedded in SiO2, a granular system synthesized by sol-gel processing. Samples with ferrite volumetric fraction x ranging from 6% to 78% were prepared, and characterized by X-ray diffraction, Mössbauer spectroscopy and vibrating sample magnetometry. Our results show the formation of pure stoichiometric NiZn-ferrite in the SiO2 matrix for x < 34%. Above these fraction, our samples presented also small amounts of Fe2O3. Mössbauer spectroscopy revealed the superparamagnetic behaviour of the ferrimagnetic NiZn-ferrite nanoparticles. The combination of different ferrite concentration and heat treatments allowed the obtaintion of samples with saturation magnetization between 1.3 and 68 emu/g and coercivity ranging from 0 to 123 Oe, value which is two orders of magnitude higher than the coercivity of bulk NiZn-ferrite.

A facile approach to fabricate Au nanoparticles loaded SiO2 microspheres for catalytic reduction of 4-nitrophenol

International Nuclear Information System (INIS)

Tang, Mingyi; Huang, Guanbo; Li, Xianxian; Pang, Xiaobo; Qiu, Haixia

2015-01-01

Hydrophilic and biocompatible macromolecules were used to improve and simplify the process for the fabrication of core/shell SiO 2 @Au composite particles. The influence of polymers on the morphology of SiO 2 @Au particles with different size of SiO 2 cores was analyzed by transmission electron microscopy and scanning electron microscopy. The optical property of the SiO 2 @Au particles was studied with UV–Vis spectroscopy. The results indicate that the structure and composition of macromolecules affect the morphology of Au layers on SiO 2 microspheres. The SiO 2 @Au particles prepared in the presence of polyvinyl alcohol (PVA) or polyvinylpyrrolidone (PVP) have thin and complete Au nanoshells owing to their inducing act in preferential growth of Au nanoparticles along the surface of SiO 2 microspheres. SiO 2 @Au particles can be also prepared from SiO 2 microspheres modified with 3-aminopropyltrimethoxysilane in the presence of PVA or PVP. This offers a simple way to fabricate a Au layer on SiO 2 or other microspheres. The SiO 2 @Au particles demonstrated high catalytic activity in the reduction of 4-nitrophenol. - Highlights: • Facile direct deposition method for Au nanoparticles on silica microspheres. • Influence of different types of macromolecule on the formation of Au shell. • High catalytic performance of Au nanoparticles on silica microspheres

Scratch resistance of SiO2 and SiO2 - ZrO2 sol-gel coatings on glass-ceramic obtained by sintering

International Nuclear Information System (INIS)

Soares, V. O.; Soares, P.; Peitl, O.; Zanotto, E. D.; Duran, A.; Castro, Y.

2013-01-01

The sol-gel process is widely used to obtain coatings on glass-ceramic substrates in order to improve the scratch and abrasion resistance, also providing a bright and homogeneous appearance of a glaze avoiding expensive final polishing treatments. This paper describes the preparation of silica and silica / zirconia coatings by sol-gel method on Li 2 O-Al 2 O3-SiO 2 (LAS) glassceramic substrates produced by sintering. The coatings were deposited by dip-coating on LAS substrates and characterized by optical microscopy and spectral ellipsometry. On the other hand, hardness and elastic modulus, coefficient of friction and abrasion and scratch resistance of the coatings were determined and compared with the substrate properties. Coatings deposited on LAS glass-ceramic confere the substrate a bright and homogeneous aspect, similar to a glaze, improving the appearance and avoiding the final polishing. However these coatings do not increase the scratch resistance of the substrate only equaling the properties of the glass-ceramic. (Author)

Interface trapping in (2 ¯ 01 ) β-Ga2O3 MOS capacitors with deposited dielectrics

Science.gov (United States)

Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

2018-05-01

The electrical properties of interfaces and the impact of post-deposition annealing have been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD SiO2) and atomic layer deposition (Al2O3) on ( 2 ¯ 01 ) oriented n-type β-Ga2O3 single crystals. Capacitance-voltage based methods have been used to extract the interface state densities, including densities of slow `border' traps at the dielectric-Ga2O3 interfaces. It was observed that SiO2-β-Ga2O3 has a higher interface and border trap density than the Al2O3-β-Ga2O3. An increase in shallow interface states was also observed at the Al2O3-β-Ga2O3 interface after post-deposition annealing at higher temperature suggesting the high temperature annealing to be detrimental for Al2O3-Ga2O3 interfaces. Among the different dielectrics studied, LPCVD SiO2 was found to have the lowest dielectric leakage and the highest breakdown field, consistent with a higher conduction band-offset. These results are important for the processing of high performance β-Ga2O3 MOS devices as these factors will critically impact channel transport, threshold voltage stability, and device reliability.

Effect of SiO2 passivation overlayers on hillock formation in Al thin films

International Nuclear Information System (INIS)

Kim, Deok-kee

2012-01-01

Hillock formation in Al thin films with varying thicknesses of SiO 2 as a passivation layer was investigated during thermal cycling. Based on the stress measurements and the number of hillocks, 250 nm thick SiO 2 was thick enough to suppress the hillock formation and the suppression of hillock at 250 nm passivation and the lack of suppression at thinner passivation is related to the presence/absence of protection against the diffusive flow of atoms from the surrounding area to the surface due to the biaxial compressive stresses present in the film through the weak spots in the passivation layer. The stress state of Al films measured during annealing (the driving force for hillock formation) did not vary much with SiO 2 thickness. A small number of hillocks formed during the plasma enhanced chemical vapor deposition of SiO 2 overlayers at 300 °C. - Highlights: ► We examined the effect of SiO 2 overlayers on hillock formation in Al thin films. ► Thin overlayers were not effective in suppressing diffusive flow to the surface. ► A thick overlayer suppressed the diffusive flow from the interior to the surface. ► The stress state of Al films did not vary much with SiO 2 passivation thickness. ► High mechanical strength provided a large driving force for the large grain growth.

Electrodeposition of zinc–silica composite coatings: challenges in incorporating functionalized silica particles into a zinc matrix

Directory of Open Access Journals (Sweden)

Tabrisur Rahman Khan, Andreas Erbe, Michael Auinger, Frank Marlow and Michael Rohwerder

2011-01-01

Full Text Available Zinc is a well-known sacrificial coating material for iron and co-deposition of suitable particles is of interest for further improving its corrosion protection performance. However, incorporation of particles that are well dispersible in aqueous electrolytes, such as silica particles, is extremely difficult. Here, we report a detailed study of Zn–SiO2 nanocomposite coatings deposited from a zinc sulfate solution at pH 3. The effect of functionalization of the silica particles on the electro-codeposition was investigated. The best incorporation was achieved for particles modified with SiO2–SH, dithiooxamide or cysteamine; these particles have functional groups that can strongly interact with zinc and therefore incorporate well into the metal matrix. Other modifications (SiO2–NH3+, SiO2–Cl and N,N-dimethyldodecylamine of the silica particles lead to adsorption and entrapment only.

Density gradient in SiO 2 films on silicon as revealed by positron annihilation spectroscopy

Science.gov (United States)

Revesz, A. G.; Anwand, W.; Brauer, G.; Hughes, H. L.; Skorupa, W.

2002-06-01

Positron annihilation spectroscopy of thermally grown and deposited SiO 2 films on silicon shows in a non-destructive manner that these films have a gradient in their density. The gradient is most pronounced for the oxide grown in dry oxygen. Oxidation in water-containing ambient results in an oxide with reduced gradient, similarly to the gradient in the deposited oxide. These observations are in accordance with earlier optical and other studies using stepwise etching or a set of samples of varying thickness. The effective oxygen charge, which is very likely one of the reasons for the difference in the W parameters of silica glass and quartz crystal, could be even higher at some localized configurations in the SiO 2 films resulting in increased positron trapping.

SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

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Minghua Li

2014-01-01

Full Text Available In this work we prepared double-layer antireflection coatings (DARC by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC, while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm/SiNx:H (80 nm DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.

Influence of ion bombardment on structural and electrical properties of SiO2 thin films deposited from O2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes

International Nuclear Information System (INIS)

Bousquet, A.; Goullet, A.; Leteinturier, C.; Granier, A.; Coulon, N.

2008-01-01

Low pressure Plasma Enhanced Chemical Vapour Deposition is commonly used to deposit insulators on temperature sensitive substrates. In these processes, the ion bombardment experienced by films during its growth is known to have benefits but also some disadvantages on material properties. In the present paper, we investigate the influence of this bombardment on the structure and the electrical properties of SiO 2 -like film deposited from oxygen/hexa-methyl-di-siloxane radiofrequency plasma in continuous and pulsed modes. First, we studied the ion kinetics thanks to time-resolved measurements by Langmuir probe. After, we showed the ion bombardment in such plasma controls the OH bond content in deposited films. Finally, we highlight the impressive reduction of fixed charge and interface state densities in films obtained in pulsed mode due to a lower ion bombardment. (authors)

In Situ X-Ray Diffraction Study on Surface Melting of Bi Nanoparticles Embedded in a SiO2 Matrix

International Nuclear Information System (INIS)

Chen Xiao-Ming; Huo Kai-Tuo; Liu Peng

2014-01-01

Bi nanoparticles embedded in a SiO 2 matrix were prepared via the high energy ball milling method. The melting behavior of Bi nanoparticles was studied by means of differential scanning calorimetry (DSC) and high-temperature in situ X-ray diffraction (XRD). DSC cannot distinguish the surface melting from ‘bulk’ melting of the Bi nanoparticles. The XRD intensity of the Bi nanoparticles decreases progressively during the in situ heating process. The variation in the normalized integrated XRD intensity versus temperature is related to the average grain size of Bi nanoparticles. Considering the effects of temperature on Debye—Waller factor and Lorentz-polarization factor, we discuss the XRD results in accordance with surface melting. Our results show that the in situ XRD technique is effective to explore the surface melting of nanoparticles

Integrated nanophotonic hubs based on ZnO-Tb(OH3/SiO2 nanocomposites

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Lin Yu

2011-01-01

Full Text Available Abstract Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH3/SiO2 as well as SnO2-Tb(OH3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.

Synthesis and Characterization of SiO2@Y2MoO6:Eu3+ Core-Shell Structured Spherical Phosphors by Sol-Gel Process.

Science.gov (United States)

Li, G Z; Liu, F H; Chu, Z S; Wu, D M; Yang, L B; Li, J L; Wang, M N; Wang, Z L

2016-04-01

SiO2@Y2MoO6:Eu3+ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO2@Y2MoO6:Eu3+ core-shell phosphors. The XRD results demonstrated that the Y2MoO6:Eu3+ layers on the SiO2 spheres crystallized after being annealed at 700 °C and the crystallinity increased with raising the annealing temperature. The obtained core-shell phosphors have spherical shape with narrow size distribution (average size ca. 640 nm), non-agglomeration, and smooth surface. The thickness of the Y2MoO6:Eu3+ shells on the SiO2 cores could be easily tailored by varying the number of deposition cycles (70 nm for four deposition cycles). The Eul+ shows a strong PL emission (dominated by 5D0-7F2 red emission at 614 nm) under the excitation of 347 nm UV light. The PL intensity of Eu3+ increases with increasing the annealing temperature and the number of coating cycles.

Thickness measurement of SiO2 films thinner than 1 nm by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Joong Kim, Kyung; Park, Ki Tae; Lee, Jong Wan

2006-01-01

The thickness measurement of ultra-thin SiO 2 films thinner than 1 nm was studied by X-ray photoelectron spectroscopy (XPS). Amorphous SiO 2 thin films were grown on amorphous Si films to avoid the thickness difference due to the crystalline structure of a substrate. SiO 2 thin films were grown by ion beam sputter deposition under oxygen gas flow and the thickness was measured by in situ XPS. The attenuation length was determined experimentally by a SiO 2 film with a known thickness. The straight line fit between the measured thickness using XPS and the nominal thickness showed a good linear relation with a gradient of 0.969 and a small offset of 0.126 nm. The gradient measured at the range of 3.4-0.28 nm was very close to that measured at sub-nanometer range of 1.13-0.28 nm. This result means that the reliable measurement of SiO 2 film thickness below 1 nm is possible by XPS

Natural CaO-TiO2-SiO2 based ceramics

Directory of Open Access Journals (Sweden)

Jelena Pantić

2011-06-01

Full Text Available Lešnica river deposits consist of a large number of minerals of different grain sizes including sphene. Since it is very difficult to obtain pure monophase titanite by different synthetic routes (sol-gel, coprecipitation, combustion, spray pyrolysis and hydrothermal method, the aim of this work was to study the structure of the sphene from the Lešnica river deposits and possibility of using it as a natural precursor for CaO-TiO2-SiO2 based ceramics. The sphene from Lešnica was analyzed by different methods: tristimulus colorimetry, infrared spectroscopy, electron microprobe and X-ray single crystal diffraction. It was confirmed that Al, Fe, Mn and P are present in the sphene structure and proposed that corresponding structural formula could be: (Ca2+1.008 Mn2+0.0021.010(Ti4+0.901 Fe3+0.033 Al3+0.060 P5+0.0010.995 Si4+1.024 O2-5.

Densification of ∼5 nm-thick SiO_2 layers by nitric acid oxidation

International Nuclear Information System (INIS)

Choi, Jaeyoung; Joo, Soyeong; Park, Tae Joo; Kim, Woo-Byoung

2017-01-01

Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO_2 layer has been decreased about three orders of magnitude by densification. • The densification of SiO_2 layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N_f) and defect state (N_d) in SiO_2/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ_t) is increased because of the increase of atomic density in SiO_2 layer. - Abstract: Low-temperature nitric acid (HNO_3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO_2/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10"−"5 A/cm"2. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10"−"8 A/cm"2) approximately three orders of magnitude less than the as-grown SiO_2 layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si"1"+, Si"2"+ and Si"3"+) in the SiO_2/Si interface, as well as a decrease in the equilibrium density of defect sites (N_d) and fixed charge density (N_f). The barrier height (Φ_t) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO_2 layer in combination with the removal of OH species and increase in interfacial properties at the SiO_2/Si interface.

SiO2 Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method

Directory of Open Access Journals (Sweden)

X. F. Zeng

2013-01-01

Full Text Available We reported the SiO2 nanopillars on microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR, and the different heights of SiO2 nanopillars on microroughened ITO/GaN were obtained after etching. Compared to a regular (flat surface GaN-based LED, the light output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%–49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars was increasing cause resulting in more rough on the microscale surface of GaN-based LEDs.

Site-specific Pt deposition and etching on electrically and thermally isolated SiO2 micro-disk surfaces

International Nuclear Information System (INIS)

Saraf, Laxmikant V

2010-01-01

Electrically and thermally isolated surfaces are crucial for improving the detection sensitivity of microelectronic sensors. The site-specific in situ growth of Pt nano-rods on thermally and electrically isolated SiO 2 micro-disks using wet chemical etching and a focused ion/electron dual beam (FIB-SEM) is demonstrated. Fabrication of an array of micro-cavities on top of a micro-disk is also demonstrated. The FIB source is utilized to fabricate through-holes in the micro-disks. Due to the amorphous nature of SiO 2 micro-disks, the Ga implantation possibly modifies through-hole sidewall surface chemistry rather than affecting its transport properties. Some sensor design concepts based on micro-fabrication of SiO 2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.

Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

KAUST Repository

Dolui, Kapildeb; Rungger, Ivan; Sanvito, Stefano

2013-01-01

Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect

Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

International Nuclear Information System (INIS)

Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

2009-01-01

The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

International Nuclear Information System (INIS)

Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

2010-01-01

Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

Association behaviour of 241Am(III) on SiO2(amorphous) and SiO2(quartz) colloids

International Nuclear Information System (INIS)

Degueldre, C.; Wernli, B.

1993-01-01

SiO 2 colloids have been identified as a potential vector for enhancing radionuclide transport in granitic groundwater and in concrete pore water. The sorption behaviour of 241 Am(III) on SiO 2 colloids was studied as a function of americium concentration pH (5-12), colloid concentration, ionic strength, temperature and SiO 2 allotropic species. The Am(III) sorption mechanism on amorphous silica is different from that on quartz. For SiO 2(amorphous) solution, the variation of log K p (ml g -1 ) with pH is linear (pH=5-9) with a slope of +1 indicating a one proton exchange mechanism. The colloid concentration (ppm) affects the sorption and log K p 3.7-0.67 log [SiO 2 ] (pH = 6). K p increases insignificantly when the ionic strength decreases. It shows no significant variation, however, with the Am concentration. On amorphous silica, the Am(III) sorption is driven by proton exchange from the silanol groups. For SiO 2 (quartz), log K p is constant over a large range of quartz concentration in suspension and the variation of log K p with pH is about linear (pH = 5-12), with a slope of 0.28, indicating a more complex exchange mechanism. Reactions taking into account the interaction of positive Am(OH) w (3-w)+ species on to the negatively charged quartz surface are suggested. (author)

Microstructural, thermal, physical and mechanical behavior of the self compacting concrete containing SiO2 nanoparticles

International Nuclear Information System (INIS)

Nazari, Ali; Riahi, Shadi

2010-01-01

Research highlights: → TiO 2 nanoparticles effects on flexural strength of self compacting concrete. → Physical and microstructural consideration. → Mechanical tests. → Thermal analysis. → Porosimetry. - Abstract: In the present study, flexural strength, thermal properties and microstructure of self compacting concrete with different amount of SiO 2 nanoparticles has been investigated. SiO 2 nanoparticles with the average particle size of 15 nm were partially added to self compacting concrete and various behaviors of the specimens have been measured. The results indicate that SiO 2 nanoparticles are able to improve the flexural strength of self compacting concrete and recover the negative effects of superplasticizer on flexural strength of the specimens. SiO 2 nanoparticle as a partial replacement of cement up to 4 wt% could accelerate C-S-H gel formation as a result of the increased crystalline Ca(OH) 2 amount at the early ages of hydration. The increased the SiO 2 nanoparticles' content more than 4 wt%, causes the reduced the flexural strength because of unsuitable dispersion of nanoparticles in the concrete matrix. Accelerated peak appearance in conduction calorimetry tests, more weight loss in thermogravimetric analysis and more rapid appearance of peaks related to hydrated products in X-ray diffraction results, all also indicate that SiO 2 nanoparticles up to 4 wt% could improve the mechanical and physical properties of the specimens. Finally, SiO 2 nanoparticles could improve the pore structure of concrete and shift the distributed pores to harmless and few-harm pores.

Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

2014-01-01

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

Sol–gel hybrid membranes loaded with meso/macroporous SiO2, TiO2–P2O5 and SiO2–TiO2–P2O5 materials with high proton conductivity

International Nuclear Information System (INIS)

Castro, Yolanda; Mosa, Jadra; Aparicio, Mario; Pérez-Carrillo, Lourdes A.; Vílchez, Susana; Esquena, Jordi; Durán, Alicia

2015-01-01

In this work, highly conductive hybrid organic–inorganic membranes loaded with SiO 2 , TiO 2 –P 2 O 5 and SiO 2 –TiO 2 –P 2 O 5 meso/macroporous particles were prepared via a sol–gel process. Meso/macroporous particles were incorporated to hybrid membranes, for improving water retention and enhancing electrochemical performance. These particles with a polymodal pore size distribution were prepared by templating in highly concentrated emulsions, the particles showed a specific surface area between 50 m 2 /g (TiO 2 –P 2 O 5 ) and 300 m 2 /g (SiO 2 –TiO 2 –P 2 O 5 ). The particles were dispersed in a hybrid silica sol and further sprayed onto glass paper. The films were polymerized and sintered; those loaded with meso/macroporous particles had a homogenous distribution. High temperature proton conductivity measurements confirmed a high water retention. Conductivity of these materials is higher than that of Nafion ® at higher temperatures (120 °C) (2·10 −2  S/cm). This study provides processing guideline to achieve hybrid electrolytes for efficient conduction of protons due to their high surface area and porous structure. - Highlights: • Hybrid electrolyte with meso/macroporous particles were synthesized by sol–gel. • Depositions of hybrid solutions by spraying onto glass substrates were performed. • Proton conductivity was evaluated as a function of composition and porous structure

Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

International Nuclear Information System (INIS)

Caricato, A.P.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Tunno, T.; Valerini, D.

2007-01-01

We report morphological and optical properties of a colloidal TiO 2 nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO 2 nanoparticle thin films

The influence of Pr3+ co-doping on the photoluminescence and cathodoluminescence properties of SiO2:Eu3+/Tb3+

CSIR Research Space (South Africa)

Mhlongo, GH

2011-07-01

Full Text Available Tb3+-Pr3+, and Eu3+-Pr3+ ion pairs co-doped in a SiO2 matrix were prepared by a sol-gel method. Co-doping of Eu3+ and Tb3+ ions with Pr3+ in SiO2 resulted in the quenching of Eu3+ and Tb3+ emissions with increasing Pr3+ concentrations. The quenching...

Do SiO 2 and carbon-doped SiO 2 nanoparticles melt? Insights from QM/MD simulations and ramifications regarding carbon nanotube growth

Science.gov (United States)

Page, Alister J.; Chandrakumar, K. R. S.; Irle, Stephan; Morokuma, Keiji

2011-05-01

Quantum chemical molecular dynamics (QM/MD) simulations of pristine and carbon-doped SiO 2 nanoparticles have been performed between 1000 and 3000 K. At temperatures above 1600 K, pristine nanoparticle SiO 2 decomposes rapidly, primarily forming SiO. Similarly, carbon-doped nanoparticle SiO 2 decomposes at temperatures above 2000 K, primarily forming SiO and CO. Analysis of the physical states of these pristine and carbon-doped SiO 2 nanoparticles indicate that they remain in the solid phase throughout decomposition. This process is therefore one of sublimation, as the liquid phase is never entered. Ramifications of these observations with respect to presently debated mechanisms of carbon nanotube growth on SiO 2 nanoparticles will be discussed.

Au nanoparticles decorated SiO2 nanowires by dewetting on curved surfaces: facile synthesis and nanoparticles–nanowires sizes correlation

International Nuclear Information System (INIS)

Ruffino, F.; Grimaldi, M. G.

2013-01-01

We report a solid-state synthesis for SiO 2 nanowires (NWs) (up to 20 microns in length and from about 40 to about 150 nm in diameter) coated by Au nanoparticles (NPs) (from about 20 to about 80 nm in diameter). This protocol is based on three steps: (1) large area production of very long SiO 2 NWs on a Si surface exploiting a simple Au/Si solid-state reaction at high temperature; (2) coating of the SiO 2 NWs by a Au film of desired thickness using sputtering depositions; and (3) a thermal process to induce a dewetting process of the Au-film coating the SiO 2 NWs to obtain Au NPs on the curved surface of the NWs. The morphology evolution of the SiO 2 NWs was followed, in each step, by scanning electron microscopy analyses. They allowed to correlate the evolution of the NPs size with the NWs sizes for different thicknesses of the starting Au-film coating the NWs and different annealing temperatures of the dewetting process. Some theoretical concepts, related to the dewetting process of a film on a curved surface were used to describe the experimental data. The main advantages of the proposed protocols include: (i) simplicity and low-cost (it is based only on sputtering depositions and thermal processes), and (ii) versatility based on the possibility of tuning Au-film thickness and annealing temperature to tune the NPs–NWs sizes ratio. These advantages can make this technique suitable for the mass production of Au NPs-coated SiO 2 NWs toward applications in electronic devices, biosensors, and nanoscale optical devices

Temperature coefficient of elastic constants of SiO2 over-layer on LiNbO3 for a temperature stable SAW device

International Nuclear Information System (INIS)

Tomar, Monika; Gupta, Vinay; Sreenivas, K

2003-01-01

The influence of sputtered SiO 2 over-layer on the SAW propagation characteristics of a 128 deg. rotated Y-cut X-propagating lithium niobate SAW filter has been studied. Experimentally measured SAW phase velocity and temperature coefficient of delay (TCD), with varying SiO 2 over-layer thickness, show a significant deviation from the theoretically calculated values using the bulk material parameters of SiO 2 . The observed deviation is attributed to the differences in the material parameters (density, elastic and dielectric constants and their temperature coefficient) of the deposited SiO 2 over-layer. The density and the dielectric constant of the deposited SiO 2 layer were determined separately, and the elastic constants and their temperature coefficients were estimated by fitting the experimental velocity and TCD data, respectively. The deviation in the dielectric constant and the density in comparison to the bulk was insignificant, and the estimated values of the elastic constants (C 11 = 0.75x10 11 N m -2 and C 44 0.225x10 11 N m -2 ) were found to be lower, and the respective temperature coefficients (5.0x10 -4 deg C -1 and 2.0x10 -4 deg C -1 ) were high in comparison to the bulk material parameters

High thermal stability of abrupt SiO2/GaN interface with low interface state density

Science.gov (United States)

Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-04-01

The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.

Ag-Decorated Fe3O4@SiO2 Nanorods: Synthesis, Characterization, and Applications in Degradation of Organic Dyes

Directory of Open Access Journals (Sweden)

Chao Li

2016-01-01

Full Text Available Well-dispersed Ag nanoparticles (NPs are successfully decorated on Fe3O4@SiO2 nanorods (NRs via a facile step-by-step strategy. This method involves coating α-Fe2O3 NRs with uniform silica layer, reduction in 10% H2/Ar atmosphere at 450°C to obtain Fe3O4@SiO2 NRs, and then depositing Ag NPs on the surface of Fe3O4@SiO2 NRs through a sonochemical step. It was found that the as-prepared Ag-decorated magnetic Fe3O4@SiO2 NRs (Ag-MNRs exhibited a higher catalytic efficiency than bare Ag NPs in the degradation of organic dye and could be easily recovered by convenient magnetic separation, which show great application potential for environmental protection applications.

Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO2

International Nuclear Information System (INIS)

Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.

2004-01-01

Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A

Preliminary study in development of glass-ceramic based on SiO2-LiO2 system, starting of different SiO2 starting powders

International Nuclear Information System (INIS)

Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D.; Melo, F.C.L.

2009-01-01

In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO 2 and Li 2 CO 3 powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO 2 powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li 2 SiO 3 and residual SiO 2 as crystalline phases. On the other side, commercial SiO 2 - Samples presented only Li 2 Si 2 O 5 as crystalline phases and the better results of hardness and fracture toughness. (author)

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Directory of Open Access Journals (Sweden)

Jiongjiong Mo

2017-01-01

Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

Thermodynamics of Bi2O3-SiO2 system

Directory of Open Access Journals (Sweden)

Onderka B.

2017-01-01

Full Text Available Thermodynamic properties of the liquid Bi2O3-SiO2 solutions were determined from the results of the electrochemical measurements by use of the solid oxide galvanic cells with YSZ (Yttria-Stabilized-Zirconia electrolyte. Activities of Bi2O3 in the solutions were determined for 0.2, 0.3, 0.4, and 0.5 SiO2 mole fractions in the temperature range 1073-1293 K from measured electromotive force (e.m.f of the solid electrolyte galvanic cell: Bi, Bi2O3-SiO2 | YSZ | air (pO2 = 0.213 bar Additionally, heat capacity data obtained for two solid phases 6Bi2O3•SiO2 and 2Bi2O3•3SiO2 were included into optimization of thermodynamic properties of the system. Optimization procedure was supported by differential thermal analysis (DTA data obtained in this work as well as those accepted from the literature. Using the data obtained in this work, and the information about phase equilibria found in the literature, binary system Bi2O3-SiO2 was assessed with the ThermoCalc software.

Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

International Nuclear Information System (INIS)

Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

2013-01-01

Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

Preparation and Characterization of Fluorescent SiO2 Microspheres

Science.gov (United States)

Xu, Cui; Zhang, Hao; Guan, Ruifang

2018-01-01

Fluorescent compound without typical fluorophores was synthesized with citric acid (CA) and aminopropyltriethoxysilane (APTS) firstly, and then it was grafted to the surface of the prepared SiO2 microspheres by chemical reaction. The fluorescent SiO2 microspheres with good fluorescent properties were obtained by optimizing the reaction conditions. And the morphology and structure of the fluorescent SiO2 microspheres have been characterized by scanning electron microscopy (SEM) and fourier transform infrared (FTIR) spectroscopy. The results showed that the preparation of fluorescent SiO2 microspheres have good monodispersity and narrow particle size distribution. Moreover, the fluorescent SiO2 microspheres can be applied to detect Fe3+ in aqueous solution, prepare fluorescent SiO2 rubber, and have potential to be applied in the fluorescent labeling and fingerprint appearing technique fields.

High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

NARCIS (Netherlands)

Nag, M.; Steudel, S.; Bhoolokam, A.; Chasin, A.; Rockele, M.; Myny, K.; Maas, J.; Fritz, T.; Trube, J.; Groeseneken, G.; Heremans, P.

2014-01-01

In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of

Magnetic SiO2 gel microspheres for arterial embolization hyperthermia

International Nuclear Information System (INIS)

Li Zhixia; Kawashita, Masakazu; Araki, Norio; Mitsumori, Michihide; Hiraoka, Masahiro; Doi, Masaaki

2010-01-01

We have prepared magnetic SiO 2 microspheres with a diameter of 20-30 μm as thermoseeds for hyperthermia of cancer. These were prepared by directly introducing preformed magnetic iron oxide nanoparticles (IONPs) into microspheres of a SiO 2 gel matrix derived from the hydrolysis of tetramethoxysilane (TMOS) in a water-in-oil (W/O) emulsion. Dimethylformamide (DMF) was used as a stabilizer, methanol (CH 3 OH) as a dispersant and ammonia (NH 4 OH) as the catalyst for the formation of the spherical particles in the aqueous phase of the W/O emulsion. The magnetic IONPs were synthesized hydrochemically in an aqueous system composed of ferrous chloride, sodium nitrate and sodium hydroxide. Mono-dispersed magnetic SiO 2 gel microspheres with a diameter of approximately 20 μm were successfully obtained by adding a determined amount of solution with a molar ratio of TMOS/DMF/CH 3 OH/H 2 O/NH 4 OH = 1:1.4:9:20:0.03 to kerosene with a surfactant (sorbitan monooleate/sorbitan monostearate = 3:1 by weight ratio) that was 30 wt% of the total amount of the oil phase. These were estimated to contain up to 60 wt% of IONPs that consisted mainly of Fe 3 O 4 and showed a higher specific absorption rate (SAR = 27.9-43.8 W g -1 ) than that of the starting IONPs (SAR = 25.3 W g -1 ) under an alternating current magnetic field of 300 Oe and 100 kHz.

In-situ grown CNTs modified SiO2/C composites as anode with improved cycling stability and rate capability for lithium storage

Science.gov (United States)

Wang, Siqi; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; He, Chunnian; He, Fang; Ma, Liying

2018-03-01

Silica (SiO2) is regarded as one of the most promising anode materials for lithium ion batteries owing to its high theoretical specific capacity, relatively low operation potentials, abundance, environmental benignity and low cost. However, the low intrinsic electrical conductivity and large volume change of SiO2 during the discharge/charge cycles usually results in poor electrochemical performance. In this work, carbon nanotubes (CNTs) modified SiO2/C composites have been fabricated through an in-situ chemical vapor deposition method. The results show that the electrical conductivity of the SiO2/C/CNTs is visibly enhanced through a robust connection between the CNTs and SiO2/C particles. Compared with the pristine SiO2 and SiO2/C composites, the SiO2/C/CNTs composites display a high initial capacity of 1267.2 mA h g-1. Besides, an excellent cycling stability with the capacity of 315.7 mA h g-1 is achieved after 1000th cycles at a rate of 1 A g-1. The significantly improved electrochemical properties of the SiO2/C/CNTs composites are mainly attributed to the formation of three dimensional CNT networks in the SiO2/C substrate, which can not only shorten the Li-ion diffusion path but also relieve the volume change during the lithium-ion insertion/extraction processes.

A novel growth mode of alkane films on a SiO2 surface

DEFF Research Database (Denmark)

Mo, H.; Taub, H.; Volkmann, U.G.

2003-01-01

on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found...... previously for shorter alkanes deposited from the vapor phase onto solid surfaces....

Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

International Nuclear Information System (INIS)

Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L.

2005-01-01

A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO 2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO 2 , Ru/HfO 2 , and Ru/HfSiO x film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO 2 , but remained stable on HfO 2 at 1000 deg. C. The onset of Ru/SiO 2 interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO 2 thickness suggests Ru diffuses through SiO 2 , followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO x samples may be due to phase separation of HfSiO x into HfO 2 grains within a SiO 2 matrix, suggesting that SiO 2 provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO 2 system at 1000 deg. C is presented

Optical properties of amorphous SiO2-TiO2 multi-nanolayered coatings for 1064-nm mirror technology

Science.gov (United States)

Magnozzi, M.; Terreni, S.; Anghinolfi, L.; Uttiya, S.; Carnasciali, M. M.; Gemme, G.; Neri, M.; Principe, M.; Pinto, I.; Kuo, L.-C.; Chao, S.; Canepa, M.

2018-01-01

The use of amorphous, SiO2-TiO2 nanolayered coatings has been proposed recently for the mirrors of 3rd-generation interferometric detectors of gravitational waves, to be operated at low temperature. Coatings with a high number of low-high index sub-units pairs with nanoscale thickness were found to preserve the amorphous structure for high annealing temperatures, a key factor to improve the mechanical quality of the mirrors. The optimization of mirror designs based on such coatings requires a detailed knowledge of the optical properties of sub-units at the nm-thick scale. To this aim we have performed a Spectroscopic Ellipsometry (SE) study of amorphous SiO2-TiO2 nanolayered films deposited on Si wafers by Ion Beam Sputtering (IBS). We have analyzed films that are composed of 5 and 19 nanolayers (NL5 and NL19 samples) and have total optical thickness nominally equivalent to a quarter of wavelength at 1064 nm. A set of reference optical properties for the constituent materials was obtained by the analysis of thicker SiO2 and TiO2 homogeneous films (∼ 120 nm) deposited by the same IBS facility. By flanking SE with ancillary techniques, such as TEM and AFM, we built optical models that allowed us to retrieve the broad-band (250-1700 nm) optical properties of the nanolayers in the NL5 and NL19 composite films. In the models which provided the best agreement between simulation and data, the thickness of each sub-unit was fitted within rather narrow bounds determined by the analysis of TEM measurements on witness samples. Regarding the NL5 sample, with thickness of 19.9 nm and 27.1 nm for SiO2 and TiO2 sub-units, respectively, the optical properties presented limited variations with respect to the thin film counterparts. For the NL19 sample, which is composed of ultrathin sub-units (4.4 nm and 8.4 nm for SiO2 and TiO2, respectively) we observed a significant decrease of the IR refraction index for both types of sub-units; this points to a lesser mass density with

Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

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Minghua Li

2013-01-01

Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

Diffusion limited Cu and Au nanocrystal formation in thin film SiO2

International Nuclear Information System (INIS)

Johannessen, B.; Kluth, P.; Glover, C.J.; Foran, G.J.; Ridgway, M.C.

2006-01-01

Elemental Cu and Au nanocrystals (NCs) were produced by high-energy ion-implantations into amorphous silica (SiO 2 ) and subsequent thermal annealing. By a combination of X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) we confirm both NC species to have the bulk face-centered cubic phase and estimate their average diameter. We concentrate on the investigation of the concentration and size-dependent coordination number (China) of these matrix embedded NCs utilising extended X-ray absorption fine structure (EXAFS) spectroscopy. The CN is found to be suppressed compared to that of a bulk standard. The CN in Au NCs is found to be lower than that of Cu NCs in agreement with smaller average Au NC sizes. We explain this difference by the difference in diffusivity for the two atomic species in SiO 2

Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

KAUST Repository

Bau, Jeremy A.; Takanabe, Kazuhiro

2017-01-01

Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

KAUST Repository

Bau, Jeremy A.

2017-10-17

Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

Study of hydrogen interaction with SiO2/Si(100) system using positrons

International Nuclear Information System (INIS)

Asoka-Kumar, P.; Lynn, K.G.; Leung, T.C.; Nielsen, B.; Wu, X.Y.

1991-01-01

We describe positron annihilation studies of SiO 2 /Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as 2.02±0.07 eV

Photocatalytic Removal of Phenol under Natural Sunlight over N-TiO2-SiO2 Catalyst: The Effect of Nitrogen Composition in TiO2-SiO2

Directory of Open Access Journals (Sweden)

Viet-Cuong Nguyen

2009-01-01

Full Text Available In this present work, high specific surface area and strong visible light absorption nitrogen doped TiO2-SiO2 photocatalyst was synthesized by using sol-gel coupled with hydrothermal treatment method. Nitrogen was found to improve the specific surface area while it also distorted the crystal phase of the resulting N-TiO2-SiO2 catalyst. As the N/ (TiO2-SiO2 molar ratio was more than 10%, the derived catalyst presented the superior specific surface area up to 260 m2/g. Nevertheless, its photoactivity towards phenol removal was observed to significantly decrease, which could results from the too low crystallinity. The nitrogen content in N-TiO2-SiO2 catalyst was therefore necessary to be optimized in terms of phenol removal efficiency and found at ca. 5%. Under UVA light and natural sunlight irradiation of 80 min, N(5%-TiO2-SiO2 catalyst presented the phenol decomposition efficiencies of 68 and 100%, respectively. It was also interestingly found in this study that the reaction rate was successfully expressed using a Langmuir-Hinshelwood (L-H model, indicating the L-H nature of photocatalytic phenol decomposition reaction on the N-TiO2-SiO2 catalyst.

Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO_2 coatings

International Nuclear Information System (INIS)

Karachevtseva, L.; Goltviansky, Yu.; Sapelnikova, O.; Lytvynenko, O.; Stronska, O.; Bo, Wang; Kartel, M.

2016-01-01

Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO_2 boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO_2 coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO_2boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO_2 coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

Glass-ceramic enamels derived from the Li2O-Na2O-Al2O3-TiO2-SiO2 system

Directory of Open Access Journals (Sweden)

SNEZANA R. GRUJIC

2002-02-01

Full Text Available The results of research on the conditions for obtaining model glass-ceramic enamels, derived from the basic Li2O-Na2O-Al2O3-TiO2-SiO2 system, by varying the initial composition and thermal treatment conditions, are presented in this paper. Segregation of the crystal phases in the glassy-matrix was carried out during subsequent thermal treatment. The formation of different crystal phases was evidenced through the results of differential-thermal analysis and X-ray powder diffraction analysis.

THE THERMODYNAMIC PROPERTIES OF MELTS OF DOUBLE SYSTEM MgO – Al2O3, MgO – SiO2, MgO – CaF2, Al2O3 – SiO2, Al2O3 – CaF2, SiO2 – CaF2

Directory of Open Access Journals (Sweden)

В. Судавцова

2012-04-01

Full Text Available Methodology of prognostication of thermodynamics properties of melts is presented from the coordinatesof liquidus of diagram of the state in area of equilibria a hard component is solution, on which energies ofmixing of Gibbs are expected in the double border systems of MgO – Al2O3, MgO – SiO2, MgO – CaF2,Al2O3 – SiO2, Al2O3 - CaF2, SiO2 - CaF2. For the areas of equilibrium there is quasibinary connection(MgAl2O4, Mg2SiO4, Al6Si2O13 – a grout at calculations was used equalization of Hauffe-Wagner. Theobtained data comport with literary

Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

Science.gov (United States)

Ohta, Hiromichi; Watanabe, Takanobu; Ohdomari, Iwao

2008-10-01

Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

International Nuclear Information System (INIS)

Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

2002-01-01

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

Effect of SiO2, PVA and glycerol concentrations on chemical and mechanical properties of alginate-based films.

Science.gov (United States)

Yang, Manli; Shi, Jinsheng; Xia, Yanzhi

2018-02-01

Sodium alginate (SA)/polyvinyl alcohol (PVA)/SiO 2 nanocomposite films were prepared by in situ polymerization through solution casting and solvent evaporation. The effect of different SA/PVA ratios, SiO 2 , and glycerol content on the mechanical properties, water content, water solubility, and water vapor permeability were studied. The nanocomposite films were characterized by Fourier transform infrared, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and thermal stability (thermogravimetric analysis/differential thermogravimetry) analyses. The nanocomposites showed the highest values of mechanical properties, such as SA/PVA ratio, SiO 2 , and glycerol content was 7:3, 6wt.%, and 0.25g/g SA, respectively. The tensile strength and elongation at break (E%) of the nanocomposites increased by 525.7% and 90.7%, respectively, compared with those of the pure alginate film. The Fourier transform infrared spectra showed a new SiOC band formed in the SA/PVA/SiO 2 nanocomposite film. The scanning electron microscopy image revealed good adhesion between SiO 2 and SA/PVA matrix. After the incorporation of PVA and SiO 2 , the water resistance of the SA/PVA/SiO 2 nanocomposite film was markedly improved. Transparency decreased with increasing PVA content but was enhanced by adding SiO 2 . Copyright © 2017. Published by Elsevier B.V.

Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

DEFF Research Database (Denmark)

Canulescu, Stela; Schou, Jørgen; Fæster, Søren

2013-01-01

Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence...... the fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix...

Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

International Nuclear Information System (INIS)

Sood, D.K.; Muralidhar, G.K.

1998-01-01

This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

Sol-Gel SiO2-CaO-P2O5 biofilm with surface engineered for medical application

Directory of Open Access Journals (Sweden)

Sonia Regina Federman

2007-06-01

Full Text Available Sol-gel film in the SiO2-CaO-P2O5 system was prepared from TEOS, TEP, alcohol and hydrated calcium nitrate in an acidic medium. The coatings were deposited on stainless steel using the dip-coating technique. After deposition, the composite was submitted to heat treatment, at different temperatures and exposure times to investigate the influence of such parameters on the surface morphology of the composite. The coated surfaces were characterized by AFM, SEM and FTIR. The present study showed that the formation of different textures (an important parameter in implant fixation could be controlled by temperature and time of heat treatment.

Impact of SiO2 on Al–Al thermocompression wafer bonding

International Nuclear Information System (INIS)

Malik, Nishant; Finstad, Terje G; Schjølberg-Henriksen, Kari; Poppe, Erik U; Taklo, Maaike M V

2015-01-01

Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal oxide (SiO 2 film). Laminates of diameter 150 mm containing device sealing frames of width 200 µm were realized. The wafers were bonded by applying a bond force of 36 or 60 kN at bonding temperatures ranging from 300–550 °C for bonding times of 15, 30 or 60 min. The effects of these process variations on the quality of the bonded laminates have been studied. The bond quality was estimated by measurements of dicing yield, tensile strength, amount of cohesive fracture in Si and interfacial characterization. The mean bond strength of the tested structures ranged from 18–61 MPa. The laminates with an SiO 2 film had higher dicing yield and bond strength than the laminates without SiO 2 for a 400 °C bonding temperature. The bond strength increased with increasing bonding temperature and bond force. The laminates bonded for 30 and 60 min at 400 °C and 60 kN had similar bond strength and amount of cohesive fracture in the bulk silicon, while the laminates bonded for 15 min had significantly lower bond strength and amount of cohesive fracture in the bulk silicon. (paper)

Optical properties of ZrO2, SiO2 and TiO2-SiO2 xerogels and coatings doped with Eu3+ and Eu2+

Directory of Open Access Journals (Sweden)

Gonçalves Rogéria R.

1999-01-01

Full Text Available Eu3+ doped bulk monoliths and thin films were obtained by sol-gel methods in the ZrO2, SiO2 and SiO2-TiO2 systems. Eu3+ 5D0 ® 7FJ emission and decay time characteristics were measured during the entire experimental preparation route from the initial sol to the final xerogels. The crystalline phases identified were tetragonal ZrO2 and mixtures of rutile and anatase TiO2 at high temperature treatments in bulk samples. Good quality thin films were obtained for all systems by dip-coating optical glasses (Schott BK270. The same spectroscopic features were observed either for the bulk monoliths or the films. By appropriate heat treatments under H2 atmosphere Eu2+ containing samples could be obtained in the SiO2-TiO2 system.

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties.

Science.gov (United States)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Prepelita, Petronela; Iordache, Gheorghe

2016-01-01

Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO 2 . Crystalline Ge nanoparticles were directly formed during co-deposition of SiO 2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge-Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO 2 /ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW -1 ), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO 2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO 2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

Directory of Open Access Journals (Sweden)

Ionel Stavarache

2016-10-01

Full Text Available Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 % into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge–Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW−1, fast response time (0.5 µs at 4 kHz and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si

Electro-codeposition of Ni-SiO2 nanocomposite coatings from deep eutectic solvent with improved corrosion resistance

Science.gov (United States)

Li, Ruiqian; Hou, Yuanyuan; Liang, Jun

2016-03-01

Electro-codeposition of nano-sized SiO2 particles into the metal matrix in aqueous solution is generally difficult. In this paper, the nano-sized SiO2 particles were successfully codeposited in the Ni matrix from a choline chloride (ChCl)/ethylene glycol (EG) based deep eutectic solvent (DES) by pulse electro-codeposition. The effects of nano-sized SiO2 particles on electrochemical behaviour of Ni(II) were investigated. The microstructure, composition and corrosion resistance of pure Ni and Ni-SiO2 nanocomposite coatings were explored. Results showed that the SiO2 nanoparticles exhibited excellent dispersion stability in ChCl:2EG DES without any stabilizing additives and the presence of SiO2 nanoparticles have significant effects on the nucleation mechanism of Ni. The maximum content of SiO2 nanoparticles in composite coatings can achieve 4.69 wt.%, which closes to the level of co-deposition micro-sized SiO2 particles from aqueous solution. The Ni-SiO2 nanocomposite coatings exhibit much better corrosion resistance than pure Ni coating, and the corrosion resistance performance increases with increasing SiO2 content in the composite coatings.

Mixed hemimicelles solid-phase extraction based on ionic liquid-coated Fe3O4/SiO2 nanoparticles for the determination of flavonoids in bio-matrix samples coupled with high performance liquid chromatography.

Science.gov (United States)

He, Huan; Yuan, Danhua; Gao, Zhanqi; Xiao, Deli; He, Hua; Dai, Hao; Peng, Jun; Li, Nan

2014-01-10

A novel magnetic solid-phase extraction (MSPE) method based on mixed hemimicelles of room temperature ionic liquids (RTILs) coated Fe3O4/SiO2 nanoparticles (NPs) was developed for simultaneous extraction of trace amounts of flavonoids in bio-matrix samples. A comparative study on the use of RTILs (C16mimBr) and CTAB-coated Fe3O4/SiO2 NPs as sorbents was presented. Owing to bigger adsorption amounts for analytes, RTILs-coated Fe3O4/SiO2 NPs was selected as MSPE materials and three analytes luteolin, quercetin and kaempferol can be quantitatively extracted and simultaneously determined coupled with high performance liquid chromatography (HPLC) in urine samples. No interferences were caused by proteins or endogenous compounds. Good linearity (R(2)>0.9993) for all calibration curves was obtained, and the limits of detection (LOD) for luteolin, quercetin and kaempferol were 0.10 ng/mL, 0.50 ng/mL and 0.20 ng/mL in urine samples, respectively. Satisfactory recoveries (93.5-97.6%, 90.1-95.4% and 93.3-96.6% for luteolin, quercetin and kaempferol) in biological matrices were achieved. It was notable that while using a small amount of Fe3O4/SiO2 NPs (4.0 mg) and C16mimBr (1.0 mg), satisfactory preconcentration factors and extraction recoveries for the three flavonoids were obtained. To the best of our knowledge, this is the first time a mixed hemimicelles MSPE method based on RTILs and Fe3O4/SiO2 NPs magnetic separation has ever been used for pretreatment of complex biological samples. Copyright © 2013 Elsevier B.V. All rights reserved.

Quantifying Silica Reactivity in Subsurface Environments: Reaction Affinity and Solute Matrix Controls on Quartz and SiO2 Glass Dissolution Kinetics

International Nuclear Information System (INIS)

Dove, Patricia M.

1999-01-01

Our goal is to develop a quantitative and mechanistic understanding of amorphous silica, SiO2(am), dissolution kinetics in aqueous solutions. A knowledge of fundamental controls on the reactivity of simple Si-O bonded phases is the baseline of behavior for understanding highly complex silica phases. In the Earth, silicate minerals comprise >70% of the crust and dominate virtually every subsurface system. More importantly for the objectives of this EMSP project, the silicates are important because compositionally complex glasses will become the front line of defense in containing radioactive wastes in the nation's long term and interim storage strategies. To date, the behavior of SiO2(am) is largely inferred from studies of the better known crystalline polymorphs (e.g. alpha-quartz). In the first step towards constructing a general model for amorphous silica reactivity in the complex fluid compositions of natural waters, we are determining the dissolution behavior as a function of temperature, solution pH and cation concentration. With these data we are determining relationships between SiO2 glass structure and dissolution rates in aqueous solutions, as described below

Nondegradative Dielectric Coating of Graphene using Thermal Evaporation of SiO

Science.gov (United States)

Suzuki, Seiya; Lee, Chien-Chung; Nagamori, Takashi; Schibli, Thomas; Yoshimura, Masamichi

2013-03-01

Deposition of dielectrics onto graphene is a challenging technique due to the difficulties of fabricating high quality oxide on pristine graphene without introducing atomic defects. Here we report on a novel method to fabricate silicon oxide layer on graphene by vacuum thermal evaporation of silicon monoxide (SiO). Raman spectroscopy and mapping showed the present method did not degrade graphene, in contrast to the e-beam evaporated SiO2 coating method previously reported. We fabricated graphene field effect transistor devices with four metal electrodes to measure gate voltage dependence of sheet resistance of the graphene, and deposited a top coating of SiO on the graphene channel. The electrical measurements before and after the top-coating revealed that the top coating suppressed chemical shift of the graphene from strong p-dope to nearly undoped. Since SiO is transparent for visible and infrared light, the coating can be available as a protection layer for optical devices of graphene such as photodetectors and electro-optic modulators. Since the SiO top coating is a simple vacuum evaporation, it is much easier than atomic-layer-deposition which requires additional functionalization of graphene, and compatible with industrial use. This research was supported in part by Toyoaki Scholarship Foundation

Study of absorption, emission and EDS properties of Pr3+ incorporated in a SiO2 matrix by sol-gel method

International Nuclear Information System (INIS)

Gómez-Miranda, M; Fonseca, R Sosa; Ordoñez, C Velásquez

2015-01-01

The optical response of the Pr 3+ ions doped monolith of SiO 2 prepared by sol-gel method was investigated by absorption and emission spectra. The absorption spectrum shows some typical lines of Pr 3+ , with these data was made the diagram levels corresponding to SiO 2 : Pr 3+ . The emission spectra were taken at 225 nm and 240 nm of wavelength of excitation was measured. In that there are reabsorption line at 423 of the Pr 3+ ions in the emission host, that means that some kind of host-ion interactions exist. Red and NIR emission at 612 nm, 652 nm, 711 and 728 nm, respectively, from Pr 3+ ions in SiO 2 was observed. The transition 1 S 0 → 3 P 2 at 425 nm is observed because an effective radiative transfer between the silicate glasses host and the praseodymium ions is observed and discussed

Magnetic nanoparticles induced dielectric enhancement in (La, Gd)2O3: SiO2 composite systems

Science.gov (United States)

Kao, T. H.; Mukherjee, S.; Yang, H. D.

2013-11-01

Magnetic Gd2O3 and non-magnetic La2O3 nanoparticles (NPs) have been synthesized together with different doping concentrations in SiO2 matrix via sol-gel route calcination at 700 °C and above. Properly annealed NP-glass composite systems show enhancement of dielectric constant and magnetodielectric effect (MDE) near room temperature, depending on superparamagnetic NPs concentrations. From application point of view, the enhancement of dielectric constant along with MDE can be achieved by tuning the NPs size through varying calcination temperature and/or increasing the doping concentration of magnetic rare earth oxide.

Stability analysis of SiO2/SiC multilayer coatings

International Nuclear Information System (INIS)

Fu Zhiqiang; Jean-Charles, R.

2006-01-01

The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

Effect of Commercial SiO2 and SiO2 from rice husk ash loading on biodegradation of Poly (lactic acid) and crosslinked Poly (lactic acid)

Science.gov (United States)

Prapruddivongs, C.; Apichartsitporn, M.; Wongpreedee, T.

2017-09-01

In this work, biodegradation behavior of poly (lactic acid) (PLA) and crosslinked PLA filled with two types of SiO2, precipitated SiO2 (commercial SiO2) and SiO2 from rice husk ash, were studied. Rice husks were first treated with 2 molar hydrochloric acid (HCl) to produce high purity SiO2, before burnt in a furnace at 800°C for 6 hours. All components were melted bending by an internal mixer then hot pressed using compression molder to form tested specimens. FTIR spectra of SiO2 and PLA samples were investigated. The results showed the lack of silanol group (Si-OH) of rice husk ash after steric acid surface modification, while the addition of particles can affect the crosslinking of the PLA. For biodegradation test by evaluating total amount of carbon dioxide (CO2) evolved during 60 days incubation at a controlled temperature of 58±2°C, the results showed that the biodegradation of crosslinked PLA occurred slower than the neat PLA. However, SiO2 incorporation enhanced the degree of biodegradation In particular, introducing commercial SiO2 in PLA and crosslinked PLA tended to clearly increase the degree of biodegradation as a consequence of the more accelerated hydrolysis degradation.

SiO2@TiO2 Coating: Synthesis, Physical Characterization and Photocatalytic Evaluation

Directory of Open Access Journals (Sweden)

A. Rosales

2018-03-01

Full Text Available Use of silicon dioxide (SiO2 and titanium dioxide (TiO2 have been widely investigated individually in coatings technology, but their combined properties promote compatibility for different innovative applications. For example, the photocatalytic properties of TiO2 coatings, when exposed to UV light, have interesting environmental applications, such as air purification, self-cleaning and antibacterial properties. However, as reported in different pilot projects, serious durability problems, associated with the adhesion between the substrate and TiO2, have been evidenced. Thus, the aim of this work is to synthesize SiO2 together with TiO2 to increase the durability of the photocatalytic coating without affecting its photocatalytic potential. Therefore, synthesis using sonochemistry, synthesis without sonochemistry, physical characterization, photocatalytic evaluation, and durability of the SiO2, SiO2@TiO2 and TiO2 coatings are presented. Results indicate that using SiO2 improved the durability of the TiO2 coating without affecting its photocatalytic properties. Thus, this novel SiO2@TiO2 coating shows potential for developing long-lasting, self-cleaning and air-purifying construction materials.

Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study.

Science.gov (United States)

Pita, Kantisara; Baudin, Pierre; Vu, Quang Vinh; Aad, Roy; Couteau, Christophe; Lérondel, Gilles

2013-12-06

We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.

Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering

International Nuclear Information System (INIS)

Li, Leliang; Zheng, Jun; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2014-01-01

(Sr,Ba) 2 SiO 4 :Eu 2+ thin films were deposited on Si at different substrate temperatures by magnetron sputtering. The morphology and crystalline phases of the films were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD) measurements, respectively. The silicate crystal phase was presented when films were annealed above 900 °C and the annealing temperature had great impact on the film morphology. The samples annealed at 1000 °C in a non-reducing atmosphere for 30 s show intense room temperature Eu 2+ emission. These findings may open a promising way to prepare efficient phosphor thin films for on-chip light emitting diodes application. - Highlights: • The (Sr, Ba) 2 SiO 4 :Eu 2+ films are fabricated by magnetron sputtering. • A very strong RT PL emission at 540 nm is achieved. • The morphology and optical properties dependent on temperature are studied

Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

Science.gov (United States)

Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

2018-03-01

Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

Magnetic SiO2/Fe3O4 colloidal crystals

International Nuclear Information System (INIS)

Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H

2008-01-01

We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field

Precipitation of amorphous SiO2 particles and their properties

Directory of Open Access Journals (Sweden)

S. Musić

2011-03-01

Full Text Available The experimental conditions were optimized for the synthesis of amorphous SiO2 particles by the reaction of neutralization of sodium silicate solution with H2SO4 solution. Amorphous SiO2 particles were characterized by XRD, FT-IR, FE-SEM, EDS and microelectrophoresis. The amorphous peak was located at 2θ = 21.8º in the XRD pattern. Primary SiO2 particles were ~ 15 to ~ 30 nm in size and they aggregated into bigger particles. Amorphous SiO2 particles showed a specific surface area up to 130 m²g-1, dependent on the parameters of the precipitation process. The EDS spectrum of amorphous SiO2 particles did not show contamination with sulfate or other ions, which cannot be excluded in traces. pHzpc =1.7 was obtained by microelectrophoresis.

Surface spins disorder in uncoated and SiO2 coated maghemite nanoparticles

International Nuclear Information System (INIS)

Zeb, F.; Nadeem, K.; Shah, S. Kamran Ali; Kamran, M.; Gul, I. Hussain; Ali, L.

2017-01-01

We studied the surface spins disorder in uncoated and silica (SiO 2 ) coated maghemite (γ-Fe 2 O 3 ) nanoparticles using temperature and time dependent magnetization. The average crystallite size for SiO 2 coated and uncoated nanoparticles was about 12 and 29 nm, respectively. Scanning electron microscopy (SEM) showed that the nanoparticles are spherical in shape and well separated. Temperature scans of zero field cooled (ZFC)/field cooled (FC) magnetization measurements showed lower average blocking temperature (T B ) for SiO 2 coated maghemite nanoparticles as compared to uncoated nanoparticles. The saturation magnetization (M s ) of SiO 2 coated maghemite nanoparticles was also lower than the uncoated nanoparticles and is attributed to smaller average crystallite size of SiO 2 coated nanoparticles. For saturation magnetization vs. temperature data, Bloch's law (M(T)= M(0).(1− BT b )) was fitted well for both uncoated and SiO 2 coated nanoparticles and yields: B =3×10 −7 K -b , b=2.22 and B=0.0127 K -b , b=0.57 for uncoated and SiO 2 coated nanoparticles, respectively. Higher value of B for SiO 2 coated nanoparticles depicts decrease in exchange coupling due to enhanced surface spins disorder (broken surface bonds) as compared to uncoated nanoparticles. The Bloch's exponent b was decreased for SiO 2 coated nanoparticles which is due to their smaller average crystallite size or finite size effects. Furthermore, a sharp increase of coercivity at low temperatures (<25 K) was observed for SiO 2 coated nanoparticles which is also due to contribution of increased surface anisotropy or frozen surface spins in these smaller nanoparticles. The FC magnetic relaxation data was fitted to stretched exponential law which revealed slower magnetic relaxation for SiO 2 coated nanoparticles. All these measurements revealed smaller average crystallite size and enhanced surface spins disorder in SiO 2 coated nanoparticles than in uncoated γ-Fe 2 O 3 nanoparticles

PECVD SiO2 dielectric for niobium Josephson IC process

International Nuclear Information System (INIS)

Lee, S.Y.; Nandakumar, V.; Murdock, B.; Hebert, D.

1991-01-01

PECVD SiO 2 dielectric has been evaluated as an insulator for a Nb-based, all-refractory Josephson integrated circuit process. First, the properties of PECVD SiO 2 films were measured and compared with those of evaporated SiO films. Second, the PECVD SiO 2 dielectric film was used in our Nb-based Josephson integrated circuit process. The main problem was found to be the deterioration of the critical temperature of the superconducting niobium adjacent to the SiO 2 . The cause and a solution of the problem were investigated. Finally, a Josephson integrated sampler circuit was fabricated and tested. This paper shows acceptable junction I-V characteristics and a measured time resolution of a 4.9 ps pulse in liquid helium

PAC study in the HfO2-SiO2 system

International Nuclear Information System (INIS)

Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

2010-01-01

A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

Carbide-reinforced metal matrix composite by direct metal deposition

Science.gov (United States)

Novichenko, D.; Thivillon, L.; Bertrand, Ph.; Smurov, I.

Direct metal deposition (DMD) is an automated 3D laser cladding technology with co-axial powder injection for industrial applications. The actual objective is to demonstrate the possibility to produce metal matrix composite objects in a single-step process. Powders of Fe-based alloy (16NCD13) and titanium carbide (TiC) are premixed before cladding. Volume content of the carbide-reinforced phase is varied. Relationships between the main laser cladding parameters and the geometry of the built-up objects (single track, 2D coating) are discussed. On the base of parametric study, a laser cladding process map for the deposition of individual tracks was established. Microstructure and composition of the laser-fabricated metal matrix composite objects are examined. Two different types of structures: (a) with the presence of undissolved and (b) precipitated titanium carbides are observed. Mechanism of formation of diverse precipitated titanium carbides is studied.

Effect of fillers on parameters of dry and swollen polymer matrix networks

Directory of Open Access Journals (Sweden)

Stojčeva-Radovanović Blaga

2002-01-01

Full Text Available The effect of nano- and micro- particle size of SiO2 on dry and swollen parameter network of the polymer matrix blends of acrylontrile-butadiene (NBR and chlorosulphonated polyethylene (CSM such as: volume and mass degree of swelling Rv and Rw; volume fraction of NBR-CSM polymer matrix in swollen gel V2 elasticity modulus G; interaction parameter between NBR-CSM polymer matrix and solvent λ and crossiinking density ν, was tested. The influence of nano-and micro- particle size of SiO2 on physical and mechanical properties, as well as effectiveness volume ratio of filiers in NBR-CSM polymer matrix at 300% elongation was tested using Einstein-Quth-Gold equation. The Kraus equation for swelling test of NBR-CSM polymer matrix containing nano- and micro- particle size of SiO2. Test results have shown that a greater interaction of nano-particie size of SiO2 with NBR-CSM polymer matrix, and possible chemical bonding, than the one of micro-silica was a consequence of a greater contact area. This results in better physical and mechanical properties.

ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

International Nuclear Information System (INIS)

Vega, N C; Caram, J; Grinblat, G; Comedi, D; Wallar, R; LaPierre, R R; Tirado, M

2012-01-01

Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO 2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source–SiO 2 substrate distance. We observe C flakes on the ZnO NWs/SiO 2 substrates which exhibit short NWs that developed on both sides. The SiO 2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO 2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate. (paper)

Suppressing Structural Colors of Photocatalytic Optical Coatings on Glass: The Critical Role of SiO2.

Science.gov (United States)

Li, Ronghua; Boudot, Mickael; Boissière, Cédric; Grosso, David; Faustini, Marco

2017-04-26

The appearance of structural colors on coated-glass is a critical esthetical drawback toward industrialization of photocatalytic coatings on windows for architecture or automobile. Herein we describe a rational approach to suppress the structural color of mesoporous TiO 2 -based coatings preserving photoactivity and mechanical stiffness. Addition of SiO 2 as third component is discussed. Ti x Si (1-x) O 2 mesoporous coatings were fabricated by one-step liquid deposition process through the evaporation induced self-assembling and characterized by GI-SAXS, GI-WAXS, electron microscopies, and in situ Environmental Ellipsometry Porosimetry. Guided by optical simulation, we investigated the critical role of SiO 2 on the optical responses of the films but also on the structural, mechanical, and photocatalytic properties, important requirements to go toward real applications. We demonstrate that adding SiO 2 to porous TiO 2 allows tuning and suppression of structural colors through refractive index matching and up to 160% increase in mechanical stiffening of the films. This study leads us to demonstrate an example of "invisible" coating, in which the light reflection is angle- and thickness-independent, and exhibiting high porosity, mechanical stiffness, and photoactivity.

Compositional dependence of absorption coefficient and band-gap for Nb2O5-SiO2 mixture thin films

International Nuclear Information System (INIS)

Sancho-Parramon, Jordi; Janicki, Vesna; Zorc, Hrvoje

2008-01-01

The absorption coefficient of composite films consisting of niobia (Nb 2 O 5 ) and silica (SiO 2 ) mixtures is studied for photon energies around the band gap. The films were deposited by co-evaporation and their composition was varied by changing the ratio of deposition rates of the two materials. Both, as-deposited and thermally annealed films were characterized by different techniques: the absorption coefficient was determined by spectrophotometric measurements and the structural properties were investigated using infrared spectroscopy, transmission electron microscopy and X-ray diffraction. The correlation between the variations of absorption properties and film composition and structure is established. The absorption coefficients determined experimentally are compared with the results derived from effective medium theories in order to evaluate the suitability of these theories for the studied composites

Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

Science.gov (United States)

Huan, Qing; Hu, Hao; Pan, Li-Da; Xiao, Jiang; Du, Shi-Xuan; Gao, Hong-Jun

2010-08-01

Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction. Finally, a phenomenal “two-branch" model is proposed to simulate the growth process of the seahorse pattern.

Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

International Nuclear Information System (INIS)

Qing, Huan; Hao, Hu; Li-Da, Pan; Jiang, Xiao; Shi-Xuan, Du; Hong-Jun, Gao

2010-01-01

Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO 2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule–molecule interaction. Finally, a phenomenal “two-branch” model is proposed to simulate the growth process of the seahorse pattern. (general)

Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

KAUST Repository

Serna, Martha I.

2016-05-24

A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.

Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

KAUST Repository

Serna, Martha I.; Yoo, Seong H.; Moreno, Salvador; Xi, Yang; Oviedo, Juan Pablo; Choi, Hyunjoo; Alshareef, Husam N.; Kim, Moon J.; Minary-Jolandan, Majid; Quevedo-Lopez, Manuel A.

2016-01-01

A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.

Effect of laser power and scanning speed on laser deposited Ti6Al4V/TiB2 matrix composites

CSIR Research Space (South Africa)

Mokgalaka, MN

2012-10-01

Full Text Available Additive Manufacturing in Industry Conference, Kwa Maritane, Pilanesberg National Park, 31 October-2 November 2012 EFFECT OF LASER POWER AND SCANNING SPEED ON LASER DEPOSITED Ti6Al4V/TiB2 MATRIX COMPOSITES M.N. Mokgalaka2,1, S.L. Pityana1,2, A.P.I...

Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

International Nuclear Information System (INIS)

Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

2015-01-01

Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

Energy Technology Data Exchange (ETDEWEB)

Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

2015-05-01

Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

Whiter, brighter, and more stable cellulose paper coated with TiO2 /SiO2 core/shell nanoparticles using a layer-by-layer approach.

Science.gov (United States)

Cheng, Fei; Lorch, Mark; Sajedin, Seyed Mani; Kelly, Stephen M; Kornherr, Andreas

2013-08-01

To inhibit the photocatalytic degradation of organic material supports induced by small titania (TiO2 ) nanoparticles, four kinds of TiO2 nanoparticles, that is, commercial P25-TiO2 , commercial rutile phase TiO2 , rutile TiO2 nanorods and rutile TiO2 spheres, prepared from TiCl4 , were coated with a thin, but dense, coating of silica (SiO2 ) using a conventional sol-gel technique to form TiO2 /SiO2 core/shell nanoparticles. These core/shell particles were deposited and fixed as a very thin coating onto the surface of cellulose paper samples by a wet-chemistry polyelectrolyte layer-by-layer approach. The TiO2 /SiO2 nanocoated paper samples exhibit higher whiteness and brightness and greater stability to UV-bleaching than comparable samples of blank paper. There are many potential applications for this green chemistry approach to protect cellulosic fibres from UV-bleaching in sunlight and to improve their whiteness and brightness. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of the atomic dynamics of nanoclusters Y2SiO5:Pr3+ by the confocal fluorescent microscopy

International Nuclear Information System (INIS)

Malyukin, Yu.V.; Zhmurin, P.N.; Syrkin, E.S.; Feodosyev, S.B.; Mamalui, M.A.

2004-01-01

The system under consideration consists of a Pr 3+ ion placed into a nanodimensional Y 2 SiO 5 crystal (∝20 nm), which rests on a glass substrate. The spectrum and attenuation of the fluorescence of the Pr 3+ ion have been studied by the method of confocal fluorescent microscopy. The rapid electron relaxation in J-multiplets of rare earth impurity ions split by the crystal field (for a usual bulk crystal τ∝10 -9 -10 -12 sec) is shown to be suppressed in the nanodimensional crystal of Y 2 SiO 5 :Pr 3+ . For the excited Stark components of 1 D 2 multiplet, the electron relaxation appears to be more than 10 4 times suppressed, while an average splitting of the 1 D 2 multiplet by the crystal field of ligands is 200 cm -1 . The observed phenomena strongly depends on the interaction of the Y 2 SiO 5 :Pr 3+ cluster with the substrate and the surrounding ('matrix'). Experimental results and theoretical calculations show the noticeable changes in the structure of vibrational spectrum and the density of vibrational states of the nanodimensional Y 2 SiO 5 :Pr 3+ crystal. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Luminescence and energy transfer of Tb3+-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses.

Science.gov (United States)

Zuo, Chenggang; Huang, Jinze; Liu, Shaoyou; Xiao, Anguo; Shen, Youming; Zhang, Xiangyang; Zhou, Zhihua; Zhu, Ligang

2017-12-05

Transparent Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses with the greater than 4g/cm 3 were prepared by high temperature melting method and its luminescent properties have been investigated by measured UV-vis transmission, excitation, emission and luminescence decay spectra. The transmission spectrum shows there are three weak absorption bands locate at about 312, 378 and 484nm in the glasses and it has good transmittance in the visible spectrum region. Intense green emission can be observed under UV excitation. The effective energy transfer from Gd 3+ ion to Tb 3+ ion could occur and sensitize the luminescence of Tb 3+ ion. The green emission intensity of Tb 3+ ion could change with the increasing SiO 2 /B 2 O 3 ratio in the borosilicate glass matrix. With the increasing concentration of Tb 3+ ion, 5 D 4 → 7 F J transitions could be enhanced through the cross relaxation between the two nearby Tb 3+ ions. Luminescence decay time of 2.12ms from 546nm emission is obtained. The results indicate that Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses would be potential scintillating material for applications in X-ray imaging. Copyright © 2017 Elsevier B.V. All rights reserved.

High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries

Directory of Open Access Journals (Sweden)

Keiichiro Homma

2014-04-01

Full Text Available Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD at a material throughput of 480 g h−1. The powders are fundamentally an aggregate of primary ~20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g−1 after 100 cycles at the same time.

High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

Science.gov (United States)

Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

2014-04-01

Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h -1 . The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH 4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g -1 after 100 cycles at the same time.

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Directory of Open Access Journals (Sweden)

Jhovani Bornacelli

2013-01-01

Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Synthesis and luminescent properties of CaCO3:Eu3+@SiO2 phosphors with core-shell structure

Science.gov (United States)

Liu, Min; Kang, Ming; Chen, Kexu; Mou, Yongren; Sun, Rong

2018-03-01

Integrating the processes of preparation of CaCO3:Eu3+ and its surface-coating, core-shell structured CaCO3:Eu3+@SiO2 phosphors with red emission were synthesized by the carbonation method and surface precipitation procedure using sodium silicate as silica source. The phase structure, thermal stability, morphology and luminescent property of the as-synthesized samples were characterized by X-ray diffraction, Fourier transform infrared spectrum, thermal analysis, field-emission scanning electron microscopy, transmission electron microscope and photoluminescence spectra. The experimental results show that Eu3+ ions as the luminescence center are divided into two types: one is at the surface of the CaCO3 and the other inhabits the site of Ca2+. For CaCO3:Eu3+@SiO2 phosphors, the SiO2 layers are continuously coated on the surface of CaCO3:Eu3+ and show a typical core-shell structure. After coated with SiO2 layer, the luminous intensity and the compatibility with the rubber matrix increase greatly. Additionally, the luminous intensity increases with the increasing of Eu3+ ions concentration in CaCO3 core and concentration quenching occurs when Eu3+ ions concentration exceeds 7.0 mol%, while it is 5.0 mol% for CaCO3:Eu3+ phosphors. Therefore, preparation of CaCO3:Eu3+@SiO2 phosphors can not only simplify the experimental process through integrating the preparation of CaCO3:Eu3+ and SiO2 layer, but also effectively increase the luminous intensities of CaCO3:Eu3+ phosphors. The as-obtained phosphors may have potential applications in the fields of optical materials and functional polymer composite materials, such as plastics and rubbers.

Comparisons between TiO2- and SiO2-flux assisted TIG welding processes.

Science.gov (United States)

Tseng, Kuang-Hung; Chen, Kuan-Lung

2012-08-01

This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding.

Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package

International Nuclear Information System (INIS)

Ikeda, Akihiro; Sakamoto, Atsushi; Hattori, Reiji; Kuroki, Yukinori

2009-01-01

Electroless Ni-B was plated on SiO 2 as a barrier layer against Cu diffusion for through-Si via (TSV) interconnections in a 3-dimensional multi-chip package. The electroless Ni-B was deposited on the entire area of the SiO 2 side wall of a deep via with vapor phase pre-deposition of 3-aminopropyl-triethoxysilane on the SiO 2 . The carrier lifetimes in the Si substrates plated with Ni-B/Cu did not decrease with an increase in annealing temperature up to 400 deg. C . The absence of degradation of carrier lifetimes indicates that Cu atoms did not diffuse into the Si through the Ni-B. The advantages of electroless Ni-B (good conformal deposition and forming an effective diffusion barrier against Cu) make it useful as a barrier layer for TSV interconnections in a 3-dimensional multi-chip package

Efficient catalytic ozonation by ruthenium nanoparticles supported on SiO2 or TiO2: Towards the use of a non-woven fiber paper as original support

KAUST Repository

Biard, Pierre-Franç ois; Werghi, Baraa; Soutrel, Isabelle; Orhand, Romain; Couvert, Annabelle; Denicourt-Nowicki, Audrey; Roucoux, Alain

2015-01-01

This work focuses on the use of Ru(0) nanoparticles as heterogeneous catalyst for ozone decomposition and radical production. In a first set of experiments, the nanoparticles have been deposited on two inorganic supports (TiO2 or SiO2) by a wet

Optical transparency and mechanical properties of semi-refined iota carrageenan film reinforced with SiO2 as food packaging material

Science.gov (United States)

Aji, Afifah Iswara; Praseptiangga, Danar; Rochima, Emma; Joni, I. Made; Panatarani, Camellia

2018-02-01

Food packaging is important for protecting food from environmental influences such as heat, light, water vapor, oxygen, dirt, dust particles, gas emissions and so on, which leads to decrease the quality of food. The most widely used type of packaging in the food industry is plastic which is made from synthetic polymers and takes hundreds of years to biodegrade. Recently, food packaging with high bio-degradability is being developed using biopolymer combined with nanoparticles as reinforcing agent (filler) to improve its properties. In this study, semi-refined iota carrageenan films were prepared by incorporating SiO2 nanoparticles as filler at different concentrations (0%, 0.5%, 1.0% and 1.5% w/w carrageenan) using solution casting method. The optical transparency and mechanical properties (tensile strength and elongation at break) of the films were analyzed. The results showed that incorporation of SiO2 nanoparticles to carrageenan matrix on optical transparency of the films. For the mechanical properties, the highest tensile strength was found for incorporation of 0.5% SiO2, while the elongation at break of the films improved with increasing SiO2 concentration.

Formation of Pentacene wetting layer on the SiO2 surface and charge trap in the wetting layer

International Nuclear Information System (INIS)

Kim, Chaeho; Jeon, D.

2008-01-01

We studied the early-stage growth of vacuum-evaporated pentacene film on a native SiO 2 surface using atomic force microscopy and in-situ spectroscopic ellipsometry. Pentacene deposition prompted an immediate change in the ellipsometry spectra, but atomic force microscopy images of the early stage films did not show a pentacene-related morphology other than the decrease in the surface roughness. This suggested that a thin pentacene wetting layer was formed by pentacene molecules lying on the surface before the crystalline islands nucleated. Growth simulation based on the in situ spectroscopic ellipsometry spectra supported this conclusion. Scanning capacitance microscopy measurement indicated the existence of trapped charges in the SiO 2 and pentacene wetting layer

One step process of decomposition and polymerization to fabricate SiO_2 hollow spheres/polyimide composite for foldable OLEDs

International Nuclear Information System (INIS)

Kim, Min Kyu; Kim, Dong Won; Moon, Soo Hyun; Shin, Dong-Wook; Oh, Tae Sik; Yoo, Ji Beom

2017-01-01

Graphical abstract: The SiO_2 hollow spheres and polyimide hybrid synthesized using one step process, simultaneous occurrence of decomposition and polymerization (SODP) is useful with a ultra-low dielectric constant and high thermal stability for flexible OLED. - Highlights: • We fabricated hybrid films of SHS/PI by using a one step process with SODP. • The film has ultralow dielectric constant (50 vol% at k = 1.67). • There is no collapse of SiO_2 hollow spheres in the PI matrix after bending test for 50,000 cycles. - Abstract: The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) requires flexible materials with a low dielectric constant as well as materials with excellent electrical, thermal, and mechanical properties for optimal device performance. Hybrid films of SiO_2 hollow spheres (SHS)/polyimide (PI) were prepared using a one-step process, with simultaneous occurrence of decomposition (polystyrene, PS) and polymerization (PI) (SODP). No collapse of SiO_2 hollow spheres in PI was observed from 10 vol% to 60 vol% SHS in hybrid films. The dielectric constant of hybrid films was reduced from 3.45 to 1.67 and was saturated at above 50 vol% of SHS due to the maximum fill factor of SHS in the PI matrix. The thermal stability was excellent up to 500 °C due to the inherent thermal property of PI. After a bending test for 50,000 cycles at a bending radius of 1 mm, the SHS/PI hybrid films retained their dielectric constant and current density. These results indicate the hybrid film to be the most promising candidate for flexible ILDs with a low dielectric constant and high thermal stability for foldable OLEDs.

The photodeposition of surface plasmon Ag metal on SiO2@α-Fe2O3 nanocomposites sphere for enhancement of the photo-Fenton behavior

Science.gov (United States)

Uma, Kasimayan; Arjun, Nadarajan; Pan, Guan-Ting; Yang, Thomas C.-K.

2017-12-01

In this study, a simple sol-gel method was used for the synthesis of a core-shell structure of SiO2@α-Fe2O3 nanocomposites for employment as a visible light photocatalyst. It was observed that Ag nanoparticles about 20 nm in size were successfully deposited on the surface of the SiO2@α-Fe2O3 nanocomposites. The photocatalytic activity of the Ag-SiO2@α-Fe2O3 nanocomposites catalyst was investigated by observing the degradation of methylene blue (MB) dye in a photo-Fenton process. The results showed that the Ag nanoparticles acted as centers for photo induced electron transfer. The catalytic activity in the SiO2@α-Fe2O3 nanocomposites were enhanced due to the plasmoni c effect of Ag metal under visible light irradiation. The addition of H2O2 played an important role, generating more OH radicals which improved the photo-Fenton catalytic activity, resulting in quicker degradation of the MB dye using the Ag-SiO2@α-Fe2O3 nanocomposite catalyst.

Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

International Nuclear Information System (INIS)

Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

2013-01-01

Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape

SiO2 Glass Density to Lower-Mantle Pressures

DEFF Research Database (Denmark)

Petitgirard, Sylvain; Malfait, Wim J.; Journaux, Baptiste

2017-01-01

and present Earth. SiO2 is the main constituent of Earth's mantle and is the reference model system for the behavior of silicate melts at high pressure. Here, we apply our recently developed x-ray absorption technique to the density of SiO2 glass up to 110 GPa, doubling the pressure range...... for such measurements. Our density data validate recent molecular dynamics simulations and are in good agreement with previous experimental studies conducted at lower pressure. Silica glass rapidly densifies up to 40 GPa, but the density trend then flattens to become asymptotic to the density of SiO2 minerals above 60...... GPa. The density data present two discontinuities at similar to 17 and similar to 60 GPa that can be related to a silicon coordination increase from 4 to a mixed 5/6 coordination and from 5/6 to sixfold, respectively. SiO2 glass becomes denser than MgSiO3 glass at similar to 40 GPa, and its density...

Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm3+ and SiO2:Ho3+, Tm3+ systems

CSIR Research Space (South Africa)

Dhlamini, MS

2012-05-01

Full Text Available .physb.2011.09.091 Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm 3+ and SiO2:Ho 3+, Tm3+ systems M.S. Dhlamini, G.H. Mhlongo, H.C. Swart, O.M. Ntwaeaborwa, K.T. Hillie ABSTRACT: Cathodoluminescence (CL) properties of Si...O2 powders activated with thulium (Tm3+) and holmium (Ho3+) ions prepared by a sol–gel process were investigated. Different molar concentrations of Tm3+ co-doped with Ho3+ were studied. The 460 nm peak was monitored and the influence of the beam...

Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

International Nuclear Information System (INIS)

Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

2004-01-01

Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

Role of chamber dimension in fluorocarbon based deposition and etching of SiO2 and its effects on gas and surface-phase chemistry

International Nuclear Information System (INIS)

Joseph, E. A.; Zhou, B.-S.; Sant, S. P.; Overzet, L. J.; Goeckner, M. J.

2008-01-01

It is well understood that chamber geometry is an influential factor governing plasma processing of materials. Simple models suggest that a large fraction of this influence is due to changes in basic plasma properties, namely, density, temperature, and potential. However, while such factors do play an important role, they only partly describe the observed differences in process results. Therefore, to better elucidate the role of chamber geometry in this work, the authors explore the influence of plasma chemistry and its symbiotic effect on plasma processing by decoupling the plasma density, temperature, and potential from the plasma-surface (wall) interactions. Specifically, a plasma system is used with which the authors can vary the chamber dimension so as to vary the plasma-surface interaction directly. By varying chamber wall diameter, 20-66 cm, and source-platen distance, 4-6 cm, the etch behavior of SiO 2 (or the deposition behavior of fluorocarbon polymer) and the resulting gas-phase chemistry change significantly. Results from in situ spectroscopic ellipsometry show significant differences in etch characteristics, with etch rates as high as 350 nm/min and as low as 75 nm/min for the same self-bias voltage. Fluorocarbon deposition rates are also highly dependent on chamber dimension and vary from no net deposition to deposition rates as high as 225 nm/min. Etch yields, however, remain unaffected by the chamber size variations. From Langmuir probe measurements, it is clear that chamber geometry results in significant shifts in plasma properties such as electron and ion densities. Indeed, such measurements show that on-wafer processes are limited at least in part by ion flux for high energy reactive ion etch. However, in situ multipass Fourier transform infrared spectroscopy reveals that the line-averaged COF 2 , SiF 4 , CF 2 , and CF 3 gas-phase densities are also dependent on chamber dimension at high self-bias voltage and also correlate well to the CF x

More accurate definition of liquation dome in Na2O-B2O3-SiO2 system

International Nuclear Information System (INIS)

Alekseeva, Z.D.; Mazurin, O.V.; Aver'yanov, V.I.; Galakhov, F.Ya.

1977-01-01

The liquation region in the system Na 2 O-B 2 O 3 -SiO 2 was investigated. The liquation temperatures were determined by the boundary of disappearance of opalescence in specimens with pre-induced opalescence. Extrapolation of the concentration dependences of the liquation temperature along sections with a constant SiO 2 content to a point indicates that with a SiO 2 content of 20-40% the liquation boundary in the system B 2 O 3 -SiO 2 hardly lies above 450 deg C

Adsorption of cationic dye on a biohybrid SiO2-alginate

International Nuclear Information System (INIS)

Barrón Zambrano, J A; Ávila Ortega, A; Muñoz Rodríguez, D; Carrera Figueiras, C; López-Pérez, A J

2013-01-01

In this work, a biohybrid material based on SiO 2 -alginate was obtained and its properties of adsorption evaluated using methylene blue as a model dye. The experimental results showed that the biohybrid SiO 2 -alginate has a higher adsorption ability compared to their base compounds (SiO 2 and alginate). Methylene blue adsorption is pH dependent, resulting in a maximum adsorption at pH = 8. The sorption kinetics rate is similar to SiO 2 . Kinetic data were fitted to a model of pseudosecond order. The experimental isotherms fit well the Langmuir model.

Focused Electrospray Deposition for Matrix-assisted Laser Desorption/Ionization Mass Spectrometry

International Nuclear Information System (INIS)

Jeong, Kyung Hwan; Seo, Jong Cheol; Yoon, Hye Joo; Shin, Seung Koo

2010-01-01

Focused electrospray (FES) deposition method is presented for matrix-assisted laser desorption/ionization (MALDI) mass spectrometry. FES ion optics consists of two cylindrical focusing electrodes capped with a truncated conical electrode through which an electrospray emitter passes along the cylindrical axis. A spray of charged droplets is focused onto a sample well on a MALDI target plate under atmospheric pressure. The shape and size distributions of matrix crystals are visualized by scanning electron microscope and the mass spectra are obtained by time-of-flight mass spectrometry. Angiotensin II, bradykinin, and substance P are used as test samples, while α-cyano-4-hydroxycinnamic acid and dihydroxybenzoic acid are employed as matrices. FES of a sample/matrix mixture produces fine crystal grains on a 1.3 mm spot and reproducibly yields the mass spectra with little shot-to-shot and spot-to-spot variations. Although FES greatly stabilizes the signals, the space charge due to matrix ions limits the detection sensitivity of peptides. To avoid the space charge problem, we adopted a dual FES/FES mode, which separately deposits matrix and sample by FES in sequence. The dual FES/FES mode reaches the detection sensitivity of 0.88 amol, enabling ultrasensitive detection of peptides by homogeneously depositing matrix and sample under atmospheric pressure

Physical and Electrical Properties of SiO2 Layer Synthesized by Eco-Friendly Method

Science.gov (United States)

Kim, Jong-Woong; Kim, Young-Seok; Hong, Sung-Jei; Hong, Tae-Hwan; Han, Jeong-In

2010-05-01

SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

Synthesis and applications of crack-free SiO2 monolith containing CdSe/ZnS quantum dots as passive lighting sources.

Science.gov (United States)

Yi, Dong Kee

2008-09-01

A reverse microemulsion technique has been used to synthesize quantum dot nanocomposites within a SiO2 surface coating. With this approach, the unique optical properties of the CdSe/ZnS quantum dots were preserved. CdSe/ZnS/SiO2 nanoparticles were homogeneously distributed in a tetramethyl orthosilicate ethanol solution and gelation process was initiated within a 10 min, and was left over night at room temperature and dried fully to achieve a solid SiO, monolith. The resulting monolith was transparent and fluorescent under ultraviolet (UV) lamp. Moreover the monolith produced was crack-free. Further studies on the photo stability of the monolith were performed using a high power UV LED device. Remarkably, quantum dots in the SiO, monolith showed better photo stability compared with those dispersed in a polymer matrix.

UV-VUV laser induced phenomena in SiO2 glass

International Nuclear Information System (INIS)

Kajihara, Koichi; Ikuta, Yoshiaki; Oto, Masanori; Hirano, Masahiro; Skuja, Linards; Hosono, Hideo

2004-01-01

Creation and annihilation of point defects were studied for SiO 2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO 2 glass to UV-VUV laser light. Topologically disordered structure of SiO 2 glass featured by the distribution of Si-O-Si angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained Si-O-Si bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO 2 glass for F 2 laser is greatly improved in fluorine-doped SiO 2 glass, often referred as 'modified silica glass'. Interstitial hydrogenous species are mobile and reactive at ambient temperature, and play an important role in photochemical reactions induced by exposure to UV-VUV laser light. They terminate the dangling-bond type color centers, while enhancing the formation of the oxygen vacancies. These findings are utilized to develop a deep-UV optical fiber transmitting ArF laser photons with low radiation damage

Magnetotransport properties of c-axis oriented La0.7Sr0.3MnO3 thin films on MgO-buffered SiO2/Si substrates

International Nuclear Information System (INIS)

Kang, Young-Min; Ulyanov, Alexander N.; Shin, Geo-Myung; Lee, Sung-Yun; Yoo, Dae-Gil; Yoo, Sang-Im

2009-01-01

c-axis oriented La 0.7 Sr 0.3 MnO 3 (LSMO) films on MgO-buffered SiO 2 /Si substrates were prepared, and their texture, microstructure, and magnetotransport properties were studied and compared to epitaxial LSMO/MgO (001) and polycrystalline LSMO/SiO 2 /Si films. c-axis oriented MgO buffer layers were obtained on amorphous SiO 2 layer through rf sputter deposition at low substrate temperature and consequent postannealing processes. In situ pulsed laser deposition-grown LSMO films, deposited on the MgO layer, show strong c-axis texture, but no in-plane texture. The c-axis oriented LSMO films which are magnetically softer than LSMO/SiO 2 /Si films exhibit relatively large low field magnetoresistance (LFMR) and sharper MR drop at lower field. The large LFMR is attributed to a spin-dependent scattering of transport current at the grain boundaries

Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

International Nuclear Information System (INIS)

Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

2013-01-01

We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Production of stable superhydrophilic surfaces on 316L steel by simultaneous laser texturing and SiO2 deposition

Science.gov (United States)

Rajab, Fatema H.; Liu, Zhu; Li, Lin

2018-01-01

Superhydrophilic surfaces with liquid contact angles of less than 5 ° have attracted much interest in practical applications including self-cleaning, cell manipulation, adhesion enhancement, anti-fogging, fluid flow control and evaporative cooling. Standard laser metal texturing method often result in unstable wetting characteristics, i.e. changing from super hydrophilic to hydrophobic in a few days or weeks. In this paper, a simple one step method is reported for fabricating a stable superhydrophilic metallic surface that lasted for at least 6 months. Here, 316L stainless steel substrates were textured using a nanosecond laser with in-situ SiO2 deposition. Morphology and chemistry of laser-textured surfaces were characterised using SEM, XRD, XPS and an optical 3D profiler. Static wettability analysis was carried out over a period of 6 months after the laser treatment. The effect of surface roughness on wettability was also studied. Results showed that the wettability of the textured surfaces could be controlled by changing the scanning speed of laser beam and number of passes. The main reason for the realisation of the stable superhydrophilic surface is the combination of the melted glass particles mainly Si and O with that of stainless steel in the micro-textured patterns. This study presents a useful method

Preparation and characterization of amorphous SiO2 coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

International Nuclear Information System (INIS)

Xu, J.L.; Xiao, Q.F.; Mei, D.D.; Zhong, Z.C.; Tong, Y.X.; Zheng, Y.F.; Li, L.

2017-01-01

Amorphous SiO 2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the “coral reef” like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 µm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO 2 and a few amorphous Fe 2 O 3 and Nd 2 O 3 . The amorphous SiO 2 coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees. - Highlights: • Amorphous SiO 2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation. • The coatings presented excellent thermal shock resistance. • The corrosion resistance could be enhanced by one order of magnitude. • The MAO coatings slightly decreased the magnetic properties of the NdFeB samples.

Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

International Nuclear Information System (INIS)

Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

2012-01-01

Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

Liquidus Temperature of SrO-Al2O3-SiO2 Glass-Forming Compositions

DEFF Research Database (Denmark)

Abel, Brett M.; Morgan, James M.; Mauro, John C.

2013-01-01

. In the composition range of interest for industrial glasses, Tliq tends to decrease with increasing strontium-to-alumina ratio. We find that cristobalite, mullite, and slawsonite are the dominant devitrification phases for the compositions with high SiO2, SiO2+Al2O3, and SrO contents, respectively. By comparison...... with the phase diagrams for CaO-Al2O3-SiO2 and MgO-Al2O3-SiO2 systems, we have found that for the highest [RO]/[Al2O3] ratios, Tliq exhibits a minimum value for R = Ca. Based on the phase diagram established here, the composition of glass materials, for example, for liquid crystal display substrates, belonging...... to the SrO-Al2O3-SiO2 family may be designed with a more exact control of the glass-forming ability by avoiding the regions of high liquidus temperature....

Fabrication and properties of highly luminescent materials from Tb(OH)3-SiO2 and Tb(OH)3-SiO2:Eu3+ nanotubes

International Nuclear Information System (INIS)

Tran Thu Huong; Tran Kim Anh; Le Quoc Minh

2009-01-01

Luminescent nanomaterials with one-dimensional (1D) structures have attracted much attention due to their unique properties and potential applications in nanophotonics and nanobiophotonics. In this paper, we report a synthesis of terbium - hydroxide - at - silica Tb(OH) 3 -SiO 2 and Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes. Terbium - hydroxide tubes were synthesized by soft template method. The size of the tubes can be controlled precisely and have outer diameters ranging from 80 to 120 nm, wall thickness of about 30 nm, and lengths ranging from 300 to 800 nm. To fabricate core/shell materials, the seed growth method is used. FESEM, X-ray diffraction, Raman spectra of Tb(OH) 3 and Tb(OH) 3 -SiO 2 nanotubes were investigated. The photoluminescence (PL) spectrum of Tb(OH) 3 under 325 nm excitation consists of four main peaks at 488, 542, 582, and 618 nm. Furthermore, a preliminary suggestion for the mechanism of growth of the Tb(OH) 3 nanotubes using the soft - template synthesis technique has been proposed. The PL intensity from Tb(OH) 3 -SiO 2 or Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes is much stronger than that of Tb(OH) 3 .

Effect of atmosphere on the fabrication of Si2N2O matrix composites

Directory of Open Access Journals (Sweden)

Wei Li

2018-03-01

Full Text Available Si2N2O matrix composites were fabricated by solid/gas reaction in air or N2 atmosphere. The effects of atmosphere on the phase and microstructure of the composites were investigated. The reaction mechanism of Si2N2O system was discussed by analysing the variation of the Gibbs free energy with temperature. The effect of N2 and air on sintering of Si2N2O matrix composites was discussed in relation to observed kinetics and thermodynamic calculations. The results showed that gradient structure of Si2N2O matrix composites were obtained in N2 atmosphere. While high N2 concentration was useful for the formation of the pure β-Si3N4 ceramics, low N2 concentration was proposed to form the pure Si2N2O ceramics. However, in the air atmosphere, structure of the Si3N4/SiO2 composites is homogeneous without the gradient structure appearing. Its composition is a little different as the O2 concentration changes.

Synthesis, characterization, and thermal stability of SiO2/TiO2/CR-Ag multilayered nanostructures

Science.gov (United States)

Díaz, Gabriela; Chang, Yao-Jen; Philipossian, Ara

2018-06-01

The controllable synthesis and characterization of novel thermally stable silver-based particles are described. The experimental approach involves the design of thermally stable nanostructures by the deposition of an interfacial thick, active titania layer between the primary substrate (SiO2 particles) and the metal nanoparticles (Ag NPs), as well as the doping of Ag nanoparticles with an organic molecule (Congo Red, CR). The nanostructured particles were composed of a 330-nm silica core capped by a granular titania layer (10 to 13 nm in thickness), along with monodisperse 5 to 30 nm CR-Ag NPs deposited on top. The titania-coated support (SiO2/TiO2 particles) was shown to be chemically and thermally stable and promoted the nucleation and anchoring of CR-Ag NPs, which prevented the sintering of CR-Ag NPs when the structure was exposed to high temperatures. The thermal stability of the silver composites was examined by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Larger than 10 nm CR-Ag NPs were thermally stable up to 300 °C. Such temperature was high enough to destabilize the CR-Ag NPs due to the melting point of the CR. On the other hand, smaller than 10 nm Ag NPs were stable at temperatures up to 500 °C because of the strong metal-metal oxide binding energy. Energy dispersion X-ray spectroscopy (EDS) was carried out to qualitatively analyze the chemical stability of the structure at different temperatures which confirmed the stability of the structure and the existence of silver NPs at temperatures up to 500 °C.

Long lasting yellow phosphorescence and photostimulated luminescence in Sr3SiO5 : Eu2+ and Sr3SiO5 : Eu2+, Dy3+ phosphors

International Nuclear Information System (INIS)

Sun Xiaoyuan; Zhang Jiahua; Zhang Xia; Luo Yongshi; Wang Xiaojun

2008-01-01

We report the observation of long lasting yellow phosphorescence and photostimulated luminescence (PSL) in Sr 3 SiO 5 : Eu 2+ and Sr 3 SiO 5 : Eu 2+ , Dy 3+ phosphors. The decay patterns of phosphorescence and thermoluminescence curves demonstrate that introduction of Dy 3+ into Sr 3 SiO 5 : Eu 2+ can generate a large number of shallow traps and deep traps. The generated deep traps prolong the phosphorescence up to 6 h after UV irradiation. The PSL is studied under 808 nm excitation. Slow rising and falling edges of the emission in Sr 3 SiO 5 : Eu 2+ , Dy 3+ are observed, showing a retrapping process by the generated shallow traps due to co-doping Dy 3+ .

Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

International Nuclear Information System (INIS)

Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

2009-01-01

Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

Superheating and supercooling of Ge nanocrystals embedded in SiO2

International Nuclear Information System (INIS)

Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, A M; Minor, A M; Beeman, J W; Ridgway, M C; Kluth, P; Iii, J W Ager; Chrzan, D C; Haller, E E

2007-01-01

Free-standing nanocrystals exhibit a size-dependant thermodynamic melting point reduction relative to the bulk melting point that is governed by the surface free energy. The presence of an encapsulating matrix, however, alters the interface free energy of nanocrystals and their thermodynamic melting point can either increase or decrease relative to bulk. Furthermore, kinetic contributions can significantly alter the melting behaviours of embedded nanoscale materials. To study the effect of an encapsulating matrix on the melting behaviour of nanocrystals, we performed in situ electron diffraction measurements on Ge nanocrystals embedded in a silicon dioxide matrix. Ge nanocrystals were formed by multi-energy ion implantation into a 500 nm thick silica thin film on a silicon substrate followed by thermal annealing at 900 deg. C for 1 h. We present results demonstrating that Ge nanocrystals embedded in SiO 2 exhibit a 470 K melting/solidification hysteresis that is approximately symmetric about the bulk melting point. This unique behaviour, which is thought to be impossible for bulk materials, is well described using a classical thermodynamic model that predicts both kinetic supercooling and kinetic superheating. The presence of the silica matrix suppresses surface pre-melting of nanocrystals. Therefore, heterogeneous nucleation of both the liquid phase and the solid phase are required during the heating and cooling cycle. The magnitude of melting hysteresis is governed primarily by the value of the liquid Ge/solid Ge interface free energy, whereas the relative values of the solid Ge/matrix and liquid Ge/matrix interface free energies govern the position of the hysteresis loop in absolute temperature

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

Science.gov (United States)

Lucovsky, Gerald; Zeller, Daniel

2011-09-01

Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

Preparation of Microkernel-Based Mesoporous (SiO2-CdTe-SiO2)@SiO2 Fluorescent Nanoparticles for Imaging Screening and Enrichment of Heat Shock Protein 90 Inhibitors from Tripterygium Wilfordii.

Science.gov (United States)

Hu, Yue; Miao, Zhao-Yi; Zhang, Xiao-Jing; Yang, Xiao-Tong; Tang, Ying-Ying; Yu, Sheng; Shan, Chen-Xiao; Wen, Hong-Mei; Zhu, Dong

2018-05-01

The currently utilized ligand fishing for bioactive molecular screening from complex matrixes cannot perform imaging screening. Here, we developed a new solid-phase ligand fishing coupled with an in situ imaging protocol for the specific enrichment and identification of heat shock protein 90 (Hsp 90) inhibitors from Tripterygium wilfordii, utilizing a multiple-layer and microkernel-based mesoporous nanostructure composed of a protective silica coating CdTe quantum dot (QD) core and a mesoporous silica shell, i.e., microkernel-based mesoporous (SiO 2 -CdTe-SiO 2 )@SiO 2 fluorescent nanoparticles (MMFNPs) as extracting carries and fluorescent probes. The prepared MMFNPs showed a highly uniform spherical morphology, retention of fluorescence emission, and great chemical stability. The fished ligands by Hsp 90α-MMFNPs were evaluated via the preliminary bioactivity based on real-time cellular morphology imaging by confocal laser scanning microscopy (CLSM) and then identified by mass spectrometry (MS). Celastrol was successfully isolated as an Hsp 90 inhibitor, and two other specific components screened by Hsp 90α-MMFNPs, i.e., demecolcine and wilforine, were preliminarily identified as potential Hsp 90 inhibitors through the verification of strong affinity to Hsp 90 and antitumor bioactivity. The approach based on the MMFNPs provides a strong platform for imaging screening and discovery of plant-derived biologically active molecules with high efficiency and selectivity.

Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

International Nuclear Information System (INIS)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

2016-01-01

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

Facile preparation of polyethylenimine-tannins coated SiO2 hybrid materials for Cu2+ removal

Science.gov (United States)

Huang, Qiang; Liu, Meiying; Zhao, Jiao; Chen, Junyu; Zeng, Guangjian; Huang, Hongye; Tian, Jianwen; Wen, Yuanqing; Zhang, Xiaoyong; Wei, Yen

2018-01-01

Polyethylenimine-tannins coated SiO2 (SiO2@PEI-TA) hybrid materials have been prepared via a single-step multifunctional coating with polyethylenimine (PEI) and tannins (TA), and characterized by transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and X-ray photoelectron spectroscopy (XPS). The as-prepared SiO2@PEI-TA composites were examined as adsorbents to remove the Cu2+ from aqueous solution. The effects of contact time, initial Cu2+ concentration, solution pH and temperature, on Cu2+ adsorption have been investigated. The results show that the adsorption of Cu2+ onto SiO2@PEI-TA is dependent on the contact time, Cu2+ concentration, pH and temperature. The SiO2@PEI-TA composites show a 2.4-fold increase in adsorption capacity, implying that the introduction of PEI-TA coating is in favor of the Cu2+ adsorption. Based on the analysis of kinetic data, the kinetics of Cu2+ adsorption is more accurately described by the pseudo-second-order model. The equilibrium data are analyzed by Langmuir and Freundlich isotherms. Results of isotherms show that the better agreement is Freundlich isotherm model with correlation coefficient of 0.9914, which suggests that the adsorption of Cu2+ onto SiO2@PEI-TA is mainly a heterogeneous adsorption process. Thermodynamic analyses show that the adsorption interaction is actually a spontaneous and endothermic chemical process, which might involve the chemical chelation between Cu2+ and functional groups (amine and carboxyl groups) on the surface of SiO2@PEI-TA. In addition, the Cu2+ ions could desorb from SiO2@PEI-TA by using acid solution and the adsorption efficiency remains at high level after five adsorption-desorption recycles. These results provide potential applications of these novel adsorbents for the removal of heavy metal Cu2+ from aqueous solution and also provide strong evidence to support the adsorption mechanism proposed in the study.

Preparation and characterization of amorphous SiO2 coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

Science.gov (United States)

Xu, J. L.; Xiao, Q. F.; Mei, D. D.; Zhong, Z. C.; Tong, Y. X.; Zheng, Y. F.; Li, L.

2017-03-01

Amorphous SiO2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the "coral reef" like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 μm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO2 and a few amorphous Fe2O3 and Nd2O3. The amorphous SiO2 coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees.

Comparative differences in the behavior of TiO2 and SiO2 food additives in food ingredient solutions

Science.gov (United States)

Yusoff, Ridhwan; Nguyen, Luong T. H.; Chiew, Paul; Wang, Zheng Ming; Ng, Kee Woei

2018-03-01

Nanotechnology is widely used in the food industry to improve the color, taste, and texture of food products. However, concerns regarding potential undesirable health effects remain. It is expected that interaction of engineered nanomaterials (ENMs) with food ingredients will influence their behavior and the resulting corona. Nonetheless, there are limited systematic studies conducted to clarify this understanding to date. Herein, we investigated the behavior and corona formation of food grade titanium dioxide (TiO2) and silicon dioxide (SiO2) in solutions of model food ingredients including bovine serum albumin (BSA) and sucrose. Measurements using dynamic light scattering (DLS) showed that both TiO2 and SiO2 nanoparticles displayed a decrease in agglomerate sizes in the presence of both food ingredients. Both particles were negatively charged in all the conditions tested. Corona adsorption studies were carried out using multiple complementary methods including Fourier transform infrared (FTIR) spectroscopy, matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-ToF-MS), transmission electron microscopy (TEM), micro bicinchoninic acid (BCA) protein assay, and thermogravimetric analysis (TGA). Comparative investigation showed that sucrose could disperse both particles more effectively than BSA and that SiO2 displayed greater adsorption capacity for both BSA and sucrose, compared to TiO2. Taken collectively, this study demonstrated the importance of considering food ingredient effects when mapping the behavior of ENMs in food products. Such understanding could be significant in the evaluation of biological effects, such as toxicity, of ENMs used in food products.

Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

Directory of Open Access Journals (Sweden)

ZHANG Hai-yuan

2017-05-01

Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

CoFe2O4-SiO2 Composites: Preparation and Magnetodielectric Properties

Directory of Open Access Journals (Sweden)

T. Ramesh

2016-01-01

Full Text Available Cobalt ferrite (CoFe2O4 and silica (SiO2 nanopowders have been prepared by the microwave hydrothermal (M-H method using metal nitrates as precursors of CoFe2O4 and tetraethyl orthosilicate as a precursor of SiO2. The synthesized powders were characterized by XRD and FESEM. The (100-x (CoFe2O4 + xSiO2 (where x = 0%, 10%, 20%, and 30% composites with different weight percentages have been prepared using ball mill method. The composite samples were sintered at 800°C/60 min using the microwave sintering method and then their structural and morphological studies were investigated using X-ray diffraction (XRD, Fourier transformation infrared (FTIR spectra, and scanning electron microscopy (SEM, respectively. The effect of SiO2 content on the magnetic and electrical properties of CoFe2O4/SiO2 nanocomposites has been studied via the magnetic hysteresis loops, complex permeability, permittivity spectra, and DC resistivity measurements. The synthesized nanocomposites with adjustable grain sizes and controllable magnetic properties make the applicability of cobalt ferrite even more versatile.

Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

International Nuclear Information System (INIS)

Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A.; Cotrino, J.

2012-01-01

Growth of amorphous SiO 2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O - ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO 2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O 2 in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

Synthesis of TiO2-doped SiO2 composite films and its applications

Indian Academy of Sciences (India)

Wintec

structure of the titanium oxide species in the TiO2-doped SiO2 composite films and the photocatalytic reactiv- ity in order to ... gaku D-max γA diffractometer with graphite mono- chromized ... FT–IR absorption spectra of TiO2-doped SiO2 com-.

Microstructure and morphology of SiOx film deposited by APCVD

International Nuclear Information System (INIS)

Zhang Jiliang; Li Jian; Luo Laima; Wo Yinhua

2009-01-01

A kind of silicon rich oxide (SiO x ) film deposited on aluminum substrate by atmospheric pressure chemical vapor deposition (APCVD) was reported. The morphology and microstructure of the film were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction (XRD) and transmission electron diffraction (TED). The deposition process is proposed to be a series of nucleation, growth and close stacking of non-uniform SiO x cells, which are stacked up by lots of SiO x laminae. A growth mechanism of the film according to the Stranski-Krastanov model is presented. In the growth process, the SiO x molecules incline to cluster like an island and merge into a layer and, then, form a laminar structure of SiO x cell. High resolution transmission electronic microscopy (TEM) picture shows that the film is basically amorphous with a little micro crystalline zone in it, which is certified by the XRD and TED results. The differences between this SiO x film and the common polycrystalline SiO 2 are also discussed in this paper

Preparation and characterization of aluminium-silica metal matrix composite

Science.gov (United States)

Mallikarjuna, G. B.; Basavaraj, E.

2018-04-01

Aluminum alloys are widely used in aerospace and automobile industries due to their low density and good mechanical properties, better corrosion resistance and wear, low thermal coefficient of expansion as compared to conventional metals and alloys. The excellent properties of these materials and relatively low production cost make them a very attractive for a variety of applications. In this present work, Al alloy LM13-SiO2 composites were produced by stir casting method. The reinforcement SiO2 particle size used for preparation of composites are 106 µm, 150 µm, 250 µm and 355 µm with varying amount of 3 to 12 wt% in steps of 3. The prepared composite specimens were machined as per test standards. Effects of weight percentage of SiO2 particles on wear, tensile strength of Al alloy LM13-SiO2 composites have been investigated. The microstructures of the composites were studied to know the dispersion of the SiO2 particles in matrix. Experimental results shows that there is enhanced mechanical properties, when silica weighing 9% was added to the base aluminium alloy and also similar trend exists in all four different micron size of silica and also it has been observed that addition of SiO2 particles significantly improves wear resistance properties as compared with that of unreinforced matrix.

D2O clusters isolated in rare-gas solids: Dependence of infrared spectrum on concentration, deposition rate, heating temperature, and matrix material

Science.gov (United States)

Shimazaki, Yoichi; Arakawa, Ichiro; Yamakawa, Koichiro

2018-04-01

The infrared absorption spectra of D2O monomers and clusters isolated in rare-gas matrices were systematically reinvestigated under the control of the following factors: the D2O concentration, deposition rate, heating temperature, and rare-gas species. We clearly show that the cluster-size distribution is dependent on not only the D2O concentration but also the deposition rate of a sample; as the rate got higher, smaller clusters were preferentially formed. Under the heating procedures at different temperatures, the cluster-size growth was successfully observed. Since the monomer diffusion was not enough to balance the changes in the column densities of the clusters, the dimer diffusion was likely to contribute the cluster growth. The frequencies of the bonded-OD stretches of (D2O)k with k = 2-6 were almost linearly correlated with the square root of the critical temperature of the matrix material. Additional absorption peaks of (D2O)2 and (D2O)3 in a Xe matrix were assigned to the species trapped in tight accommodation sites.

Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

International Nuclear Information System (INIS)

Au, V; Charles, C; Boswell, R W

2006-01-01

The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

Synthesis of Vertically-Aligned Carbon Nanotubes from Langmuir-Blodgett Films Deposited Fe Nanoparticles on Al2O3/Al/SiO2/Si Substrate.

Science.gov (United States)

Takagiwa, Shota; Kanasugi, Osamu; Nakamura, Kentaro; Kushida, Masahito

2016-04-01

In order to apply vertically-aligned carbon nanotubes (VA-CNTs) to a new Pt supporting material of polymer electrolyte fuel cell (PEFC), number density and outer diameter of CNTs must be controlled independently. So, we employed Langmuir-Blodgett (LB) technique for depositing CNT growth catalysts. A Fe nanoparticle (NP) was used as a CNT growth catalyst. In this study, we tried to thicken VA-CNT carpet height and inhibit thermal aggregation of Fe NPs by using Al2O3/Al/SiO2/Si substrate. Fe NP LB films were deposited on three typed of substrates, SiO2/Si, as-deposited Al2O3/Al/SiO2/Si and annealed Al2O3/Al/SiO2/Si at 923 K in Ar atmosphere of 16 Pa. It is known that Al2O3/Al catalyzes hydrocarbon reforming, inhibits thermal aggregation of CNT growth catalysts and reduces CNT growth catalysts. It was found that annealed Al2O3/Al/SiO2/Si exerted three effects more strongly than as-deposited Al2O3/Al/SiO2/Si. VA-CNTs were synthesized from Fe NPs-C16 LB films by thermal chemical vapor deposition (CVD) method. As a result, at the distance between two nearest CNTs 28 nm or less, VA-CNT carpet height on annealed Al2O3/Al/SiO2/Si was about twice and ten times thicker than that on SiO2/Si and that on as-deposited Al2O3/Al/SiO2/Si, respectively. Moreover, distribution of CNT outer diameter on annealed Al2O3/Al/SiO2/Si was inhibited compared to that on SiO2/Si. These results suggest that since thermal aggregation of Fe NPs is inhibited, catalyst activity increases and distribution of Fe NP size is inhibited.

Synthesis of Hollow Nanotubes of Zn2SiO4 or SiO2: Mechanistic Understanding and Uranium Adsorption Behavior.

Science.gov (United States)

Tripathi, Shalini; Bose, Roopa; Roy, Ahin; Nair, Sajitha; Ravishankar, N

2015-12-09

We report a facile synthesis of Zn2SiO4 nanotubes using a two-step process consisting of a wet-chemical synthesis of core-shell ZnO@SiO2 nanorods followed by thermal annealing. While annealing in air leads to the formation of hollow Zn2SiO4, annealing under reducing atmosphere leads to the formation of SiO2 nanotubes. We rationalize the formation of the silicate phase at temperatures much lower than the temperatures reported in the literature based on the porous nature of the silica shell on the ZnO nanorods. We present results from in situ transmission electron microscopy experiments to clearly show void nucleation at the interface between ZnO and the silica shell and the growth of the silicate phase by the Kirkendall effect. The porous nature of the silica shell is also responsible for the etching of the ZnO leading to the formation of silica nanotubes under reducing conditions. Both the hollow silica and silicate nanotubes exhibit good uranium sorption at different ranges of pH making them possible candidates for nuclear waste management.

Vancomycin-modified Fe3O4@SiO2@Ag microflowers as effective antimicrobial agents

Directory of Open Access Journals (Sweden)

Wang C

2017-04-01

Full Text Available Chongwen Wang,1,2,* Kehan Zhang,2,* Zhe Zhou,2,* Qingjun Li,2 Liting Shao,2 Rong Zhang Hao,3 Rui Xiao,2 Shengqi Wang1,2 1College of Life Sciences & Bio-Engineering, Beijing University of Technology, 2Beijing Key Laboratory of New Molecular Diagnosis Technologies for Infectious Diseases, Beijing Institute of Radiation Medicine, Beijing, 3Institute for Disease Control and Prevention, Academy of Military Medical Sciences, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: Nanomaterials combined with antibiotics exhibit synergistic effects and have gained increasing interest as promising antimicrobial agents. In this study, vancomycin-modified magnetic-based silver microflowers (Van/Fe3O4@SiO2@Ag microflowers were rationally designed and prepared to achieve strong bactericidal ability, a wide antimicrobial spectrum, and good recyclability. High-performance Fe3O4@SiO2@Ag microflowers served as a multifunction-supporting matrix and exhibited sufficient magnetic response property due to their 200 nm Fe3O4 core. The microflowers also possessed a highly branched flower-like Ag shell that provided a large surface area for effective Ag ion release and bacterial contact. The modified-vancomycin layer was effectively bound to the cell wall of bacteria to increase the permeability of the cell membrane and facilitate the entry of the Ag ions into the bacterium, resulting in cell death. As such, the fabricated Van/Fe3O4@SiO2@Ag microflowers were predicted to be an effective and environment-friendly antibacterial agent. This hypothesis was verified through sterilization of Gram-negative Escherichia coli and Gram-positive methicillin-resistant Staphylococcus aureus, with minimum inhibitory concentrations of 10 and 20 µg mL-1, respectively. The microflowers also showed enhanced effect compared with bare Fe3O4@SiO2@Ag microflowers and free-form vancomycin, confirming the synergistic effects of the combination of the

Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

International Nuclear Information System (INIS)

Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

2007-01-01

The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

Preparation of Si and O co-solution strengthened Ti alloys by using rice husks as SiO2 resource and quantitative descriptions on their strengthening effects

Science.gov (United States)

Jia, Lei; Chen, Jiang-xian; Lu, Zhen-lin; Li, Shu-feng; Umeda, Junko; Kondoh, Katsuyoshi

2018-04-01

Ti alloys strengthened by both Si and O solutes were prepared by powder metallurgy method from pure Ti and amorphous SiO2 powder obtained by combusting rice husks. At the same time, Ti alloys singly strengthened by Si or O were also prepared for studying the strengthening effect of Si and O solutes. Results showed that amorphous SiO2 powder originated from rice husks could almost fully dissolve into pure Ti matrix when the content was not higher than 1.0 wt%, while higher content of SiO2 addition resulted in the formation of Ti5Si3 intermetallics. Si and O elements leaded to negative and positive distortion of Ti lattice, and the influencing degrees were ‑0.02 and +0.014 Å/wt% for lattice constant a, while ‑0.05 and +0.046 Å/wt% for constant c, respectively. Solid solution of Si and O would also result in the increase of hardness, which was 98.5 and 209.43 HV/wt%, respectively. When Si and O were co-exsited in Ti matrix, the negative and positive distortion cancelled each other, while the strengthening effect did not cancel but enhance each other.

SIMULTANEOUS OBSERVATIONS OF SiO AND H2O MASERS TOWARD SYMBIOTIC STARS

International Nuclear Information System (INIS)

Cho, Se-Hyung; Kim, Jaeheon

2010-01-01

We present the results of simultaneous observations of SiO v = 1, 2, J = 1-0, 29 SiO v = 0, J = 1-0, and H 2 O 6 16 -5 23 maser lines performed with the KVN Yonsei 21 m radio telescope from 2009 November to 2010 January. We searched for these masers in 47 symbiotic stars and detected maser emission from 21 stars, giving the first time detection from 19 stars. Both SiO and H 2 O masers were detected from seven stars of which six were D-type symbiotic stars and one was an S-type star, WRAY 15-1470. In the SiO maser emission, the 28 SiO v = 1 maser was detected from 10 stars, while the v = 2 maser was detected from 15 stars. In particular, the 28 SiO v = 2 maser emission without the v = 1 maser detection was detected from nine stars with a detection rate of 60%, which is much higher than that of isolated Miras/red giants. The 29 SiO v = 0 maser emission was also detected from two stars, H 2-38 and BF Cyg, together with the 28 SiO v = 2 maser. We conclude that these different observational results between isolated Miras/red giants and symbiotic stars may be related with the presence of hot companions in a symbiotic binary system.

The influence of SiO2 Addition on 2MgO-Al2O3-3.3P2O5 Glass

DEFF Research Database (Denmark)

Larsen, P.H.; Poulsen, F.W.; Berg, Rolf W.

1999-01-01

2MgO-Al2O3-3.3P2O5 glasses with increasing amounts of SiO2 are considered for sealing applications in Solid Oxide Fuel Cells (SOFC). The change in chemical durability under SOFC anode conditions and the linear thermal expansion is measured as functions of the SiO2 concentration. Raman spectroscopy...... analysis of the glasses reveals no sign of important changes in the glass structure upon SiO2 addition. Some increase in glass durability with SiO2 concentration is reported and its cause is discussed....

Diffusive charge transport in graphene on SiO 2

Science.gov (United States)

Chen, J.-H.; Jang, C.; Ishigami, M.; Xiao, S.; Cullen, W. G.; Williams, E. D.; Fuhrer, M. S.

2009-07-01

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO 2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density ( σ(n)∝n) in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates; increased dielectric screening reduces the scattering from charged impurities, but increases the scattering from short-range scatterers. We evaluate the effects of the corrugations (ripples) of graphene on SiO 2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity that is linear in temperature and independent of carrier density; at higher temperatures, polar optical phonons of the SiO 2 substrate give rise to an activated, carrier density-dependent resistivity. Together the results paint a complete picture of charge carrier transport in graphene on SiO 2 in the diffusive regime.

CoO-doped MgO-Al2O3-SiO2-colored transparent glass-ceramics with high crystallinity

Science.gov (United States)

Tang, Wufu; Zhang, Qian; Luo, Zhiwei; Yu, Jingbo; Gao, Xianglong; Li, Yunxing; Lu, Anxian

2018-02-01

To obtain CoO-doped MgO-Al2O3-SiO2 (MAS)-colored transparent glass-ceramics with high crystallinity, the glass with the composition 21MgO-21Al2O3-54SiO2-4B2O3-0.2CoO (in mol %) was prepared by conventional melt quenching technique and subsequently thermal treated at several temperatures. The crystallization behavior of the glass, the precipitated crystalline phases and crystallinity were analyzed by X-ray diffraction (XRD). The microstructure of the glass-ceramics was characterized by field emission scanning electron microscopy (FSEM). The transmittance of glass-ceramic was measured by UV spectrophotometer. The results show that a large amount of α-cordierite (indianite) with nano-size was precipitated from the glass matrix after treatment at 1020 °C for 3 h. The crystallinity of the transparent glass-ceramic reached up to 97%. Meanwhile, the transmittance of the glass-ceramic was 74% at 400 nm with a complex absorption band from 450 nm to 700 nm. In addition, this colored transparent glass-ceramic possessed lower density (2.469 g/cm3), lower thermal expansion coefficient (1.822 × 10-6 /℃), higher Vickers hardness (9.1 GPa) and higher bending strength (198 MPa) than parent glass.

The extracellular matrix deposited by asthmatic airway smooth muscle cells in a resting state reflects a healthy matrix

NARCIS (Netherlands)

Harkness, Louise; Ashton, Anthony; Burgess, Janette

2015-01-01

Introduction: The remodelled asthmatic airway features an altered extracellular matrix (ECM) & increased vasculature. Previous studies found asthmatic (A) airway smooth muscle cells (ASMCs) to deposit an ECM with enhanced bioactivity. These studies however investigated ECM deposited in the presence

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

International Nuclear Information System (INIS)

Toftmann, B.; Papantonakis, M.R.; Auyeung, R.C.Y.; Kim, W.; O'Malley, S.M.; Bubb, D.M.; Horwitz, J.S.; Schou, J.; Johansen, P.M.; Haglund, R.F.

2004-01-01

A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

2004-01-01

-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates......A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR...... were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

Density, thickness and composition measurements of TiO2 -SiO2 thin films by coupling X-ray reflectometry, ellipsometry and electron probe microanalysis-X

International Nuclear Information System (INIS)

Hodroj, A.; Roussel, H.; Crisci, A.; Robaut, F.; Gottlieb, U.; Deschanvres, J.L.

2006-01-01

Mixed TiO 2 -SiO 2 thin films were deposited by aerosol atmospheric CVD method by using di-acetoxi di-butoxi silane (DADBS) and Ti tetra-butoxide as precursors. By varying the deposition temperatures between 470 and 600 deg. C and the ratios between the Si and Ti precursors (Si/Ti) from 2 up to 16, films with different compositions and thicknesses were deposited. The coupled analysis of the results of different characterisation methods was used in order to determine the variation of the composition, the thickness and the density of the films. First EPMA measurements were performed at different acceleration voltages with a Cameca SX50 system. By analysing, with specific software, the evolution of the intensity ratio I x /I std versus the voltage, the composition and the mass thickness (product of density by the thickness) were determined. In order to measure independently the density, X-ray reflectometry experiments were performed. By analysing the value of the critical angle and the Kiessig fringes, the density and the thickness of the layers were determined. The refractive index and the thickness of the films were also measured by ellipsometry. By assuming a linear interpolation between the index value of the pure SiO 2 and TiO 2 films, the film composition was deduced from the refractive index value. XPS measurements were also performed in order to obtain an independent value of the composition. A good agreement between the ways to measure the density is obtained

Moessbauer studies of magnetic Fe2O3/SiO2 nanocomposite

International Nuclear Information System (INIS)

Lancok, A.; Zaveta, K.; Savii, C.; Barcova, K.

2006-01-01

Fe 2 O 3 /SiO 2 magnetic nanocomposites rich in Fe 2 O 3 have been obtained by annealing at 1000 grad C the xerogel samples, prepared under various conditions. The target concentrations of iron oxide in inert matrix were 20% and 30%. As mesoporous matrices both silica and polyvinyl alcohol - silica hybrid ones were used. The xerogel nanocomposite samples were obtained in situ and by impregnation under ultrasonic activation. All obtained samples were annealed under moderate oxidation conditions (air) and inert atmosphere such as vacuum or nitrogen. Moessbauer spectra were obtained using a conventional Moessbauer spectrometer with a 57 Co/Rh source and constant acceleration. Velocity calibration was done using α-iron, and the Moessbauer parameters are given relative to this standard at room temperature. The Moessbauer spectra contained the sextets of ε-Fe 2 O 3 , hematite, and superparamagnetic component. The content of various phases in the samples depends on the conditions of preparation. In one of the samples also magnetite was present. The ranges of the ε-Fe 2 O 3 area of the samples are 39-76%. The hematite phase is only residual, after transformation due to heat treatment. (authors)

Selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation.

Science.gov (United States)

Miao, Guang; Ye, Feiyan; Wu, Luoming; Ren, Xiaoling; Xiao, Jing; Li, Zhong; Wang, Haihui

2015-12-30

This study investigates selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation. The TiO2/SiO2 adsorbents were prepared and then characterized by N2 adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO2/SiO2 were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO2/0.7SiO2 adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO2 served as the photocatalytic sites for DBT oxidation, while SiO2 acted as the selective adsorption sites for the corresponding oxidized DBT using TiO2 as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO2/SiO2; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO2/SiO2 was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO2/0.7SiO2 adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions. Copyright © 2015 Elsevier B.V. All rights reserved.

Characterization and origin of low-T willemite (Zn2SiO4) mineralization: the case of the Bou Arhous deposit (High Atlas, Morocco)

Science.gov (United States)

Choulet, Flavien; Barbanson, Luc; Buatier, Martine; Richard, James; Vennemann, Torsten; Ennaciri, Aomar; Zouhair, Mohamed

2017-10-01

Willemite (Zn2SiO4) usually reported in hypogene non-sulfide deposits is described as the main ore mineral in the carbonate-hosted Bou Arhous zinc deposit. This deposit is located in the High Atlas intracontinental range that formed during the Tertiary. Based on a set of microscopic observations, it was possible to establish that willemite replaces primary sphalerite. On the basis of cathodoluminescence imaging, three successive generations of willemite are distinguished, with evidence of dissolution-reprecipitation processes. Willemite is also variably enriched in Ge (up to 1000 ppm), while Ge contents lower than 100 ppm are reported in the primary sulfide minerals. Depending on the willemite generation, this substitution was positively or negatively correlated to the Zn-Pb substitution. According to the nature of zoning (sector versus oscillatory), the incorporation of Ge was either controlled by crystallographic factors or by the nature of the mineralizing fluids. Willemite is associated with other oxidation-related mineral species, like cerussite (PbCO3) but is not in isotopic equilibrium and therefore not considered to be cogenetic. Oxygen isotope compositions support the formation of willemite at temperatures below 130 °C, from mixed meteoric and deeper, hydrothermal fluids. The formation of the High Atlas Belt during the Tertiary has contributed to the exhumation of the sulfide minerals and the development of vertical conduits for percolation of meteoric water and ascending hydrothermal fluids. In addition to a local contribution of silicate minerals of the host limestone, hydrothermal fluids probably transported Si and Ge that are incorporated in willemite.

Atomic layer deposition of W - based layers on SiO2

NARCIS (Netherlands)

van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Wolters, Robertus A.M.; Aarnink, Antonius A.I.

2003-01-01

W and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2%

Synthesis and characterization of Al2O3 and SiO2 films with fluoropolymer content using rf-plasma magnetron sputtering technique

International Nuclear Information System (INIS)

Islam, Mohammad; Inal, Osman T.

2008-01-01

Pure and molecularly mixed inorganic films for protection against atomic oxygen in lower earth orbit were prepared using radio-frequency (rf) plasma magnetron sputtering technique. Alumina (Al 2 O 3 ) and silica (SiO 2 ) films with average grain size in the range of 30-80 nm and fully dense or dense columnar structure were synthesized under different conditions of pressure and power. Simultaneous oxide sputtering and plasma polymerization (PP) of hexafluoropropylene (HFP) led to the formation of molecularly mixed films with fluoropolymer content. The degree of plasma polymerization was strongly influenced by total chamber pressure and the argon to HFP molar ratio (n Ar /n M ). An order of magnitude increase in pressure due to argon during codeposition changed the plasma-polymerization mechanism from radical-chain- to radical-radical-type processes. Subsequently, a shift from linear CH 2 group based chain polymerization to highly disordered fluoropolymer content with branching and cross-linking was observed. Fourier transform infrared spectroscopy studies revealed chemical interaction between depositing SiO 2 and PP-HFP through appearance of absorption bands characteristic of Si-F stretching and expansion of SiO 2 network. The relative amount and composition of plasma-polymerized fluoropolymer in such films can be controlled by changing argon to HFP flow ratio, total chamber pressure, and applied power. These films offer great potential for use as protective coatings in aerospace applications

The minimum amount of "matrix " needed for matrix-assisted pulsed laser deposition of biomolecules

DEFF Research Database (Denmark)

Tabetah, Marshall; Matei, Andreea; Constantinescu, Catalin

2014-01-01

The ability of matrix-assisted pulsed laser evaporation (MAPLE) technique to transfer and deposit high-quality thin organic, bioorganic, and composite films with minimum chemical modification of the target material has been utilized in numerous applications. One of the outstanding problems in MAPLE...

Luminescence properties of Ca2 Ga2 SiO7 :RE phosphors for UV white-light-emitting diodes.

Science.gov (United States)

Jiao, Mengmeng; Lv, Wenzhen; Lü, Wei; Zhao, Qi; Shao, Baiqi; You, Hongpeng

2015-03-16

A series of Eu(2+) -, Ce(3+) -, and Tb(3+) -doped Ca2 Ga2 SiO7 phosphors is synthesized by using a high-temperature solid-state reaction. The powder X-ray diffraction and structure refinement data indicate that our prepared phosphors are single phased and the phosphor crystalizes in a tetrahedral system with the ${P\\bar 42m}$ (113) space group. The Eu(2+) - and Ce(3+) -doped phosphors both have broad excitation bands, which match well with the UV light-emitting diodes chips. Under irradiation of λ=350 nm, Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) have green and blue emissions, respectively. Luminescence of Ca2 Ga2 SiO7 :Tb(3+) , Li(+) phosphor varies with the different Tb(3+) contents. The thermal stability and energy-migration mechanism of Ca2 Ga2 SiO7 :Eu(2+) are also studied. The investigation results indicate that the prepared Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) samples show potential as green and blue phosphors, respectively, for UV-excited white-light-emitting diodes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal Annealing Effect on Optical Properties of Binary TiO2-SiO2 Sol-Gel Coatings

Directory of Open Access Journals (Sweden)

Xiaodong Wang

2012-12-01

Full Text Available TiO2-SiO2 binary coatings were deposited by a sol-gel dip-coating method using tetrabutyl titanate and tetraethyl orthosilicate as precursors. The structure and chemical composition of the coatings annealed at different temperatures were analyzed by Raman spectroscopy and Fourier Transform Infrared (FTIR spectroscopy. The refractive indices of the coatings were calculated from the measured transmittance and reflectance spectra. An increase in refractive index with the high temperature thermal annealing process was observed. The Raman and FTIR results indicate that the refractive index variation is due to changes in the removal of the organic component, phase separation and the crystal structure of the binary coatings.

Study on spectroscopic properties and effects of tungsten ions in 2Bi2O3-3GeO2/SiO2 glasses.

Science.gov (United States)

Yu, Pingsheng; Su, Liangbi; Cheng, Junhua; Zhang, Xia; Xu, Jun

2017-04-01

The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass samples have been prepared by the conventional melt quenching technique. XRD patterns, absorption spectra, excitation-emission spectra and Raman measurements were utilized to characterize the synthesized glasses. When substitute SiO 2 for GeO 2 , the 0.4Bi 2 O 3 -(0.4-0.1)GeO 2 -(0.2-0.5)SiO 2 glasses exhibit strong emission centered at about 475nm (under 300nm excitation), and the decay constants are within the scope of 20-40ns. W doping into 2Bi 2 O 3 -3SiO 2 glass could increase the emission intensity of 470nm, and the W-doped 2Bi 2 O 3 -3SiO 2 glass has shown another emission at about 433nm with much shorter decay time (near 10ns). The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass system could be the possible candidate for scintillator in high energy physics applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Resistencia al desgaste de recubrimientos sol-gel de SiO2 y SiO2 - ZrO2 sobre materiales vitrocerámicos obtenidos por sinterización

Directory of Open Access Journals (Sweden)

Soares, V. O.

2013-10-01

Full Text Available The sol-gel process is widely used to obtain coatings on glass-ceramic substrates in order to improve the scratch and abrasion resistance, also providing a bright and homogeneous appearance of a glaze avoiding expensive final polishing treatments. This paper describes the preparation of silica and silica / zirconia coatings by sol-gel method on Li2O-Al2O3-SiO2 (LAS glassceramic substrates produced by sintering. The coatings were deposited by dip-coating on LAS substrates and characterized by optical microscopy and spectral ellipsometry. On the other hand, hardness and elastic modulus, coefficient of friction and abrasion and scratch resistance of the coatings were determined and compared with the substrate properties. Coatings deposited on LAS glass-ceramic confere the substrate a bright and homogeneous aspect, similar to a glaze, improving the appearance and avoiding the final polishing. However these coatings do not increase the scratch resistance of the substrate only equaling the properties of the glass-ceramic.El proceso sol-gel es un método interesante para la producción de recubrimientos vítreos sobre sustratos vitrocerámicos con el fin de mejorar su resistencia al rayado y al desgaste, y proporcionando además un aspecto homogéneo, vidriado y brillante que evite los costosos tratamientos finales de pulido. Este trabajo describe la preparación de recubrimientos de sílice y sílice/ circona por el método sol-gel sobre sustratos vitrocerámicos del sistema Li2O-Al2O3-SiO2 (LAS producidos por sinterización. Los recubrimientos se depositaron por la técnica de inmersión y se caracterizaron mediante microscopía óptica de luz reflejada y elipsometría espectral. Por otro lado, se determinó la dureza y el módulo de elasticidad, además del coeficiente de fricción, la resistencia al desgaste y al rayado de los recubrimientos. Estos resultados se compararon con las propiedades del sustrato sin recubrir. Las capas depositadas

In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

International Nuclear Information System (INIS)

Gao, Y.; Mueller, A.H.; Irene, E.A.; Auciello, O.; Krauss, A.; Schultz, J.A.

1999-01-01

(Ba 0.5 ,Sr 0.5 )TiO 3 (BST) thin films were deposited on MgO, Si, SiO 2 and Ir surfaces by ion beam sputter deposition in oxygen at 700 degree C. In situ spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5 - 4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO 2 /Si structure were examined by SE and Auger electron spectroscopy depth profiles. Subcutaneous oxidation in the BST/Ir structure was observed by in situ SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700 degree C. A study of the thermal stability of the Ir/TiN/SiO 2 /Si structure in oxygen at 700 degree C was carried out using in situ SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO 2 /Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of in situ SE and TOF-MSRI provides a powerful methodology for in situ monitoring of complex oxide film growth and postannealing processes. copyright 1999 American Vacuum Society

Cd2SiO4/Graphene nanocomposite: Ultrasonic assisted synthesis, characterization and electrochemical hydrogen storage application.

Science.gov (United States)

Masjedi-Arani, Maryam; Salavati-Niasari, Masoud

2018-05-01

For the first time, a simple and rapid sonochemical technique for preparing of pure Cd 2 SiO 4 nanostructures has been developed in presence of various surfactants of SDS, CTAB and PVP. Uniform and fine Cd 2 SiO 4 nanoparticle was synthesized using of polymeric PVP surfactant and ultrasonic irradiation. The optimized cadmium silicate nanostructures added to graphene sheets and Cd 2 SiO 4 /Graphene nanocomposite synthesized through pre-graphenization. Hydrogen storage capacity performances of Cd 2 SiO 4 nanoparticle and Cd 2 SiO 4 /Graphene nanocomposite were compared. Obtained results represent that Cd 2 SiO 4 /Graphene nanocomposites have higher hydrogen storage capacity than Cd 2 SiO 4 nanoparticles. Cd 2 SiO 4 /Graphene nanocomposites and Cd 2 SiO 4 nanoparticles show hydrogen storage capacity of 3300 and 1300 mAh/g, respectively. Copyright © 2018 Elsevier B.V. All rights reserved.

Enhanced the hydrophobic surface and the photo-activity of TiO2-SiO2 composites

Science.gov (United States)

Wahyuni, S.; Prasetya, A. T.

2017-02-01

The aim of this research is to develop nanomaterials for coating applications. This research studied the effect of various TiO2-SiO2 composites in acrylic paint to enhance the hydrophobic properties of the substrate. Titanium dioxide containing silica in the range 20-35 mol% has been synthesized using sol-gel route. The XRD’s spectra show that increasing SiO2 content in the composite, decreasing its crystalline properties but increasing the surface area. TiO2-SiO2 composite was dispersed in acrylic paint in 2% composition by weight. The largest contact angle was 70, which produced by the substrate coated with TS-35-modified acrylic paint. This study also investigated the enhanced photo-activity of TiO2-SiO2 modified with poly-aniline. The XRD spectra show that the treatment does not change the crystal structure of TiO2. The photo-activity of the composite was evaluated by degradation of Rhodamine-B with visible light. The best performance of the degradation process was handled by the composite treated with 0.1mL anilines per gram of TiO2-SiO2 composite (TSP-A). On the other side, the contact angle 70 has not shown an excellent hydrophobic activity. However, the AFM spectra showed that nanoroughness has started to form on the surface of acrylic paint modified with TiO2-SiO2 than acrylic alone.

SiO2-induced release of sVEGFRs from pulmonary macrophages.

Science.gov (United States)

Chao, Jie; Lv, Yan; Chen, Jin; Wang, Jing; Yao, Honghong

2018-01-01

The inhalation of silicon dioxide (SiO 2 ) particles causes silicosis, a stubborn pulmonary disease that is characterized by alveolar inflammation during the early stage. Soluble cytokine receptors (SCRs) play important roles in regulating inflammation by either attenuating or promoting cytokine signaling. However, the role of SCRs in silicosis remains unknown. Luminex assays revealed increased soluble vascular endothelial growth factor receptor (sVEGFR) family levels in the plasma of silicosis patients. In an enzyme-linked immunosorbent assay (ELISA), cells from the differentiated human monocytic cell line U937 released sVEGFR family proteins after exposure to SiO 2 (50μg/cm 2 ). Further Western blot experiments revealed that VEGFR expression was also elevated in U937 cells. In contrast, levels of sVEGFR family members did not change in the supernatants of human umbilical vein endothelial cells (HUVECs) after exposure to SiO 2 (50μg/cm 2 ). Interestingly, VEGFR expression in HUVECs decreased after SiO 2 treatment. In a scratch assay, HUVECs exhibited cell migration ability, indicating the acquisition of mesenchymal properties. Our findings highlight the important role of sVEGFRs in both inflammation and fibrosis induced by SiO 2 , suggesting a possible mechanism for the fibrogenic effects observed in pulmonary diseases associated with fibrosis. Copyright © 2017 Elsevier B.V. All rights reserved.

Photocatalytic application of TiO2/SiO2-based magnetic nanocomposite (Fe3O4@SiO2/TiO2 for reusing of textile wastewater

Directory of Open Access Journals (Sweden)

Laleh Enayati Ahangar

2016-01-01

Full Text Available In this research we have developed a treatment method for textile wastewater by TiO2/SiO2-based magnetic nanocomposite. Textile wastewater includes a large variety of dyes and chemicals and needs treatments. This manuscript presents a facile method for removing dyes from the textile wastewater by using TiO2/SiO2-based nanocomposite (Fe3O4@SiO2/TiO2 under UV irradiation. This magnetic nanocomposite, as photocatalytically active composite, is synthesized via solution method in mild conditions. A large range of cationic, anionic and neutral dyes including: methyl orange, methylene blue, neutral red, bromocresol green and methyl red are used for treatment investigations. Neutral red and bromocresol green have good results in reusing treatment. The high surface area of nanocomposites improve the kinetic of wastewater treatment. In this method, by using the magnetic properties of Fe3O4 nanoparticles, TiO2-based photocatalyst could be separated and reused for 3 times. The efficiency of this method is respectively 100% and 65% for low concentration (10 ppm and high concentration (50 ppm of neutral red and bromocrosol green after 3 h treatment. The efficiency of treatment using the second used nanocomposite was 90% for 10 ppm of the same dyes.

Processing and optical properties of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides

Science.gov (United States)

Xiang, Qing; Zhou, Yan; Ooi, Boon Siew; Lam, Yee Loy; Chan, Yuen Chuen; Kam, Chan Hin

2000-05-01

We report here the processing and optical characterization of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides deposited on SOS substrates by the sol-gel route combined with spin-coating and rapid thermal annealing. The recipes used for preparing the solutions by sol-gel route are in mole ratio of 93SiO2:20AlO1.5: x ErO1.5. In order to verify the residual OH content in the films, FTIR spectra were measured and the morphology of the material by the XRD analysis. Five 2-layer films annealed at a maximum temperature of 500 degrees C, 700 degrees C, 900 degrees, 1000 degrees C, 1100 degrees C respectively were fabricated on silicon. The FTIR and XRD curves show that annealing at 1050 degrees C for 15s effectively removes the OH in the materia and keeps the material amorphous. The propagation loss of the planar waveguides was measured by using the method based on scattering in measurements and the result was obtained to be 1.54dB/cm. The fluorescence spectra were measured with 514nm wavelength of Ar+ laser by directly shining the pump beam on the film instead of prism coupling. The results show that the 1 mole Nd3+ content recipe has the strongest emission efficiency among the four samples investigated.

Growth and structure of hyperthin SiO2 coatings on polymers

International Nuclear Information System (INIS)

Dennler, G.; Houdayer, A.; Segui, Y.; Wertheimer, M.R.

2001-01-01

Transparent inorganic oxide coatings on polymers are playing an increasingly important role in pharmaceutical, food, and beverage packaging, and more recently in encapsulation of organic, light-emitting display devices. Such coatings are being prepared by physical or by chemical vacuum-deposition methods. They possess barrier properties against permeation of gases or vapors when they are thicker than a certain critical thickness, d c ; for d c , the 'oxygen transmission rate' (in standard cm 3 /m 2 /day/bar), for example, is roughly the same as that of the uncoated polymer. This fact is commonly attributed in the literature to a 'nucleation' phase of the coating's growth, during which it is thought to present an island-like structure. In order to test this hypothesis, we have deposited hyperthin SiO 2 coatings on various flexible polymeric substrates using plasma-enhanced chemical vapor deposition. The film thicknesses investigated here, well below d c (typically in the range 1-10 nm), were determined by Rutherford backscattering spectroscopy, which allows us to determine the surface concentration of silicon. This was found to be a linear function of the deposition time, t, for t≥0.5 s. Then, combining reactive ion etching in oxygen plasma with scanning electron and optical microscopy, we have been able to characterize the structure of the coatings: even for d≤2 nm, no island structure has been observed. Instead, we found continuous coatings which contain large concentrations, n, of tiny pinhole defects (with typical radii in the range of tens of nanometers), where n increases with decreasing d. These assertions are confirmed by grazing angle (80 deg. ) angle-resolved x-ray photoelectron spectroscopy, which shows that even for d=2 nm, the structural features of the polymer substrate cannot be detected

Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles

KAUST Repository

Zhang, Dongen

2013-01-01

Photocatalysis provides a \\'green\\' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. © 2013 The Royal Society of Chemistry.

Luminescence and origin of lead-related centers in single crystalline films of Y2SiO5 and Lu2SiO5

International Nuclear Information System (INIS)

Babin, V.; Gorbenko, V.; Krasnikov, A.; Mihokova, E.; Nikl, M.; Zazubovich, S.; Zorenko, Yu.

2013-01-01

In the temperature range 4.2–350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics are studied for the undoped Y 2 SiO 5 and Lu 2 SiO 5 single crystalline films grown by liquid phase epitaxy method from the PbO-based flux and, owing to that, containing lead ions substituting for Y 3+ or Lu 3+ ions. Luminescence characteristics of Pb-related centers of different types are identified. On the basis of the results obtained, we suggest that the ultraviolet emission of Pb-related centers arises from the Pb 2+ ions substituting for Y 3+ or Lu 3+ ions in the Y1 and Lu1 lattice sites of the X 2 structure. Possible hypotheses on the origin of the intense complex lead-related blue emission are discussed. We propose phenomenological models describing the excited-state dynamics of the studied luminescence centers. We also determine characteristic parameters of the corresponding relaxed excited states, in particular, the energy separations between the excited states and the rates of the radiative and non-radiative transitions from these states. -- Highlights: •Emission of lead centers in Y 2 SiO 5 and Lu 2 SiO 5 single crystalline films is studied. •The ultraviolet emission arises from Pb 2+ ions located in Y1 or Lu1 lattice sites. •Possible hypotheses on the origin of the blue emission are proposed and discussed. •The relaxed excited states parameters of various Pb-related centers are determined

Investigation of SiO2 thin films dielectric constant using ellipsometry technique

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P Sangpour

2014-11-01

Full Text Available In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS as precursor. Thin films were annealed at different temperatures (400-600oC. Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ellipsometry technique. Based on our atomic force microscopic (AFM and ellipsometry results, thin layers prepared through this method showed high surface area, and high porosity ranging between 4.9 and 16.9, low density 2 g/cm, and low dielectric constant. The dielectric constant and porosity of layers increased by increasing the temperature due to the changes in surface roughness and particle size.

Semiconductor nanocrystals formed in SiO2 by ion implantation

International Nuclear Information System (INIS)

Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

1994-11-01

Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

Science.gov (United States)

Raut, A. P.; Deshpande, V. K.

2018-01-01

The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

Highly conformal SiO2/Al2O3 nanolaminate gas-diffusion barriers for large-area flexible electronics applications

International Nuclear Information System (INIS)

Choi, Jin-Hwan; Kim, Young-Min; Park, Young-Wook; Park, Tae-Hyun; Jeong, Jin-Wook; Choi, Hyun-Ju; Song, Eun-Ho; Ju, Byeong-Kwon; Lee, Jin-Woo; Kim, Cheol-Ho

2010-01-01

The present study demonstrates a flexible gas-diffusion barrier film, containing an SiO 2 /Al 2 O 3 nanolaminate on a plastic substrate. Highly uniform and conformal coatings can be made by alternating the exposure of a flexible polyethersulfone surface to vapors of SiO 2 and Al 2 O 3 , at nanoscale thickness cycles via RF-magnetron sputtering deposition. The calcium degradation test indicates that 24 cycles of a 10/10 nm inorganic bilayer, top-coated by UV-cured resin, greatly enhance the barrier performance, with a permeation rate of 3.79 x 10 -5 g m -2 day -1 based on the change in the ohmic behavior of the calcium sensor at 20 deg. C and 50% relative humidity. Also, the permeation rate for 30 cycles of an 8/8 nm inorganic bilayer coated with UV resin was beyond the limited measurable range of the Ca test at 60 deg. C and 95% relative humidity. It has been found that such laminate films can effectively suppress the void defects of a single inorganic layer, and are significantly less sensitive against moisture permeation. This nanostructure, fabricated by an RF-sputtering process at room temperature, is verified as being useful for highly water-sensitive organic electronics fabricated on plastic substrates.

Enhancement of photocatalytic degradation of furfural and acetophenone in water media using nano-TiO2-SiO2 deposited on cementitious materials.

Science.gov (United States)

Soltan, Sahar; Jafari, Hoda; Afshar, Shahrara; Zabihi, Omid

2016-10-01

In the present study, silicon dioxide (SiO 2 ) nanoparticles were loaded to titanium dioxide (TiO 2 ) nano-particles by sol-gel method to make a high porosity photocatalyst nano-hybrid. These photocatalysts were synthesized using titanium tetrachloride and tetraethyl orthosilicate as titanium and silicon sources, respectively, and characterized by X-ray powder diffraction (XRD) and scanning electron microscope methods. Subsequently, the optimizations of the component and operation conditions were investigated. Then, nano-sized TiO 2 and TiO 2 -SiO 2 were supported on concrete bricks by the dip coating process. The photocatalytic activity of nano photocatalysts under UV irradiation was examined by studying the decomposition of aqueous solutions of furfural and acetophenone (10 mg/L) as model of organic pollutants to CO 2 and H 2 O at room temperature. A decrease in the concentration of these pollutants was assayed by using UV-visible absorption, gas chromatography technique, and chemical oxygen demand. The removal of these pollutants from water using the concrete-supported photocatalysts under UV irradiation was performed with a greater efficiency, which does not require an additional separation stage to recover the catalyst. Therefore, it would be applicable to use in industrial wastewater treatment at room temperature and atmospheric pressure within the optimized pH range.

Use of MnO2 and MnO2 SiO2 for sorbing of Sr-90 from liquid rad waste

International Nuclear Information System (INIS)

Subiarto; Las, Thamzil; Aan BH, Martin; Utomo, Cahyo Hari

1998-01-01

The synthesis of MnO 2 adsorbent and MnO 2 -SiO 2 composite has been done. MnO 2 synthesis is done by the reaction of KMnO 4 , Mn(NO 3 ) 2 .4H 2 O and Na 2 S 2 O 4 ( MnO 2 -A, MnO 2 -B, and MnO 2 -T ). MnO 2 . SiO 2 is made from KMnO 4 , Na 2 SiO 3 , and H 2 O 2 . The result obtained show the best Sr-90 sorption by MnO 2 -A with Kd = 2085.63 ml/g, by MnO 2 -L with Kd = 755.09 ml/g, and by MnO 2 - SiO 2 composite with Kd = 1466.51 ml/g. From this result, we can conclude that MnO 2 -SiO 2 can be expanded for Sr-90 sorption from liquid radioactive waste. (author)

Morphology and growth behavior of O_2-free chemical bath deposited ZnS thin films

International Nuclear Information System (INIS)

Jet Meitzner, K.; Tillotson, Brock M.; Siedschlag, Amanda T.; Moore, Frederick G.; Kevan, Stephen D.; Richmond, Geraldine L.

2015-01-01

We investigate the role of reagent concentrations and ambient O_2 on the morphology and growth behavior of ZnS thin films grown with the chemical bath deposition method. We investigate the role of substrate on film morphology, and find significant differences between films deposited on SiO_2 versus Si. The films are also sensitive to dissolved O_2 in the bath, as it causes a layer of SiO_2 to form at the ZnS/Si interface during deposition. Degassing of solutions and an N_2 atmosphere are effective to minimize this oxidation, allowing deposition of ZnS films directly onto Si. Under these conditions, we examine film properties as they relate to reagent bath concentrations. As the reagent concentrations are decreased, both the film roughness and growth rate decrease linearly. We also observe deformation and shifting of X-ray diffraction peaks that increases with decreasing reagent concentrations. The shifts are characteristic of lattice compression (caused by the substitution of oxygen for sulfur), and the deformation is characteristic of distortion of the lattice near crystal grain interfaces (caused by tensile stress from interatomic forces between neighboring crystal grains). At the weakest concentrations, the low roughness suggests a mixed growth mode in which both clusters and individual ZnS nanocrystallites contribute to film growth. With increasing reagent concentrations, the growth mode shifts and becomes dominated by deposition of clusters. - Highlights: • We deposit ZnS thin films by chemical bath deposition in an O_2-free environment. • The O_2-free environment is effective to minimize oxidation of the Si substrate. • The dominant growth mechanism changes with reagent concentrations. • Film morphology and composition change with reagent concentrations. • X-ray diffraction reveals tensile stress between ZnS crystal grains.

Cytotoxicity and effect on GJIC of SiO2 nanoparticles in HL-7702 cells

International Nuclear Information System (INIS)

Pan Tao; Jin Minghua; Liu Xiaomei; Du Zhongjun; Zhou Xianqing; Huang Peili; Sun Zhiwei

2013-01-01

Objective: To study the cytotoxicity and effect on gap junction intracellular communication (GJIC) of SiO 2 nanoparticles in HL-7702 cells, and to provide experimental basis for toxicity assessment and the security applications of SiO 2 nanoparticles. Methods: Transmission electron microscope (TEM) was used to characterize two kinds of SiO 2 nanoparticles, verifying their size, dispersion and shape; dynamic light scattering (DLS) method was used to analyze the water dispersion and culture medium dispersion of the SiO 2 nanoparticles; MTT assay was carried out to examine the cytotoxicities of the two sizes SiO 2 nanoparticles on the cells; lactate dehydrogenase (LDH) release assay was performed to examine the integrity nano of the cell membrane; Scrape-loading and dye transfer assay was performed to examine the effect of SiO 2 nanoparticles on GJIC. Results: Based on the result of TEM, two kinds of SiO 2 nanoparticles were spherically shaped, uniformly sized and sporadically dispersed; the statistical analysis results showed the diameters of the two nanoparticles were (447.60±20.78) nm and (67.42±5.69) nm, respectively, thus they could be categorized as submicron scale and nano scale. The DLS method results manifested that the hydration nanoparticle sizes of the two SiO 2 nanoparticles were (684.37±18.76) nm, (128.31±7.64) nm in high purity water and (697.02±19.57) nm, (133.74±8.97) nm in RPMI-1640 solution, all the two nanoparticles were well dispersed without aggregation. MTT assay indicated that 24 h after treatment of SiO 2 nanoparticles, the cell viabilities were affected by both the size and the dose of the SiO 2 nanoparticles; the higher the dose was, the less viability the cells exhibited. Moreover, the nano scale particles inflicted more damage to the cells. LDH release assay indicated that the SiO 2 particles could also damage the cell membrane in a dose-dependent and size-dependent way. Scrape-loading and dye transfer assay indicated that the nano

The Effect of SiO2 Shell on the Suppression of Photocatalytic Activity of TiO2 and ZnO Nanoparticles

International Nuclear Information System (INIS)

Lee, Min Hee; Lee, Choon Soo; Patil, Umakant Mahadev; Kochuveedu, Saji Thomas

2012-01-01

In this study, we investigate the potential use of TiO 2 SiO 2 and ZnO SiO 2 core/shell nanoparticles (NPs) as effective UV shielding agent. In the typical synthesis, SiO 2 was coated over different types of TiO 2 (anatase and rutile) and ZnO by sol-gel method. The synthesized TiO 2 SiO 2 and ZnO SiO 2 Nps were characterized by UV-Vis, XRD, Sem and TEM. The UV-vis absorbance and transmittance spectra of core shell NPs showed an efficient blocking effect in the UV region and more than 90% transmittance in the visible region. XRD and SAED studies confirmed the formation of amorphous SiO 2 coated over the TiO 2 and ZnO NPs. The FESEM and TEM images shows that coating of SiO 2 over the surface of anatase, rutile TiO 2 and ZnO NPs resulted in the increase in particle size by ∼30 nm. In order to study the UV light shielding capability of the samples, photocatalytic degradation of methylene blue dye on TiO 2 SiO 2 and ZnO SiO 2 NPs was performed. Photocatalytic activity for both types of TiO 2 NPs was partially suppressed. In comparison, the photocatalytic activity of ZnO almost vanished after the SiO 2 coating

Irradiation-induced hardening/softening in SiO2 studied with instrumented indentation

International Nuclear Information System (INIS)

Nakano, Shinsuke; Muto, Shunsuke; Tanabe, Tetsuo

2005-01-01

To understand the plastic deformation mechanism of SiO 2 polytypes, we measured the mechanical parameters of He + -irradiated crystalline SiO 2 (α-quartz, c-SiO 2 ) and vitreous SiO 2 (silica glass, v-SiO 2 ) as functions of the irradiation dose, by using the instrumented indentation method combined with a finite-element analysis. We extracted the effects of local rotation and bending of the SiO 4 framework (the degree of local structural freedom), which play key roles in the plastic deformation, and expressed the hardness change with a simple formula. For v-SiO 2 , the changes in the density and the number of broken bonds correlated well with the change in the degree of freedom. In contrast, for c-SiO 2 the present formulation was insufficient to fully express the hardness change in the structural disordering regime. The structure change by irradiation peculiar to this material is discussed, based on the theoretical formulation

Photoluminescence and scintillation properties of Ce-doped Sr2(Gd1-xLux)8(SiO4)6O2 (x = 0.1, 0.2, 0.4, 0.5, 0.6) crystals

Science.gov (United States)

Igashira, Takuya; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-05-01

Apatite crystals with chemical compositions of 0.5% Ce-doped Sr2(Gd1-xLux)8(SiO4)6O2 (x = 0.1, 0.2, 0.4, 0.5, 0.6) were synthesized by the Floating Zone method, and then we evaluated their photoluminescence (PL) and scintillation properties. All the Ce-doped samples exhibited PL and scintillation with an intense broad emission in 400-550 nm in which the origin was attributed to the 5d-4f transition of Ce3+, and the emission peak became broader with increasing the concentration of Lu3+. Both PL and scintillation decay time profiles were best-approximated by a sum of two exponential decay functions, and the origin of slower component was attributed to the 5d-4f transition of Ce3+. In the X-ray induced afterglow measurements, the Ce-doped Sr2(Gd0.4Lu0.6)8(SiO4)6O2 sample exhibited the lowest afterglow level. Furthermore, the Ce-doped Sr2(Gd0.5Lu0.5)8(SiO4)6O2 and Sr2(Gd0.4Lu0.6)8(SiO4)6O2 samples showed a clear full energy deposited peak under 5.5 MeV 241Am α-ray irradiation, and the estimated absolute scintillation light yields were around 290 and 1300 ph/5.5 MeV-α, respectively.

High photocatalytic activity of hierarchical SiO2@C-doped TiO2 hollow spheres in UV and visible light towards degradation of rhodamine B.

Science.gov (United States)

Zhang, Ying; Chen, Juanrong; Hua, Li; Li, Songjun; Zhang, Xuanxuan; Sheng, Weichen; Cao, Shunsheng

2017-10-15

Ongoing research activities are targeted to explore high photocatalytic activity of TiO 2 -based photocatalysts for the degradation of environmental contaminants under UV and visible light irradiation. In this work, we devise a facile, cost-effective technique to in situ synthesize hierarchical SiO 2 @C-doped TiO 2 (SCT) hollow spheres for the first time. This strategy mainly contains the preparation of monodisperse cationic polystyrene spheres (CPS), sequential deposition of inner SiO 2 , the preparation of the sandwich-like CPS@SiO 2 @CPS particles, and formation of outer TiO 2 . After the one-step removal of CPS templates by calcination at 450°C, hierarchical SiO 2 @C-doped TiO 2 hollow spheres are in situ prepared. The morphology, hierarchical structure, and properties of SCT photocatalyst were characterized by TEM. SEM, STEM Mapping, BET, XRD, UV-vis spectroscopy, and XPS. Results strongly confirm the carbon doping in the outer TiO 2 lattice of SCT hollow spheres. When the as-synthesized SCT hollow spheres were employed as a photocatalyst for the degradation of Rhodamine B under visible-light and ultraviolet irradiation, the SCT photocatalyst exhibits a higher photocatalytic activity than commercial P25, effectively overcoming the limitations of poorer UV activity for many previous reported TiO 2 -based photocatalysts due to doping. Copyright © 2017 Elsevier B.V. All rights reserved.

CNTs, Al2O3 and SiO2 Reinforced Epoxy: Tribological Properties of Polymer Nanocomposites

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M.A. Ramadan,

2017-09-01

Full Text Available The present work studied the effect of filling epoxy matrix by different types and concentrations of nanoparticles on the friction and wear behaviors. Various concentrations (0.2 %, 0.4 %, 0.6 %, 0.8 % and 1 wt.% of multi walled carbon nano tubes (MWCNTs, aluminum oxide (Al2O3, and silica (SiO2 nanoparticles were used to reinforce epoxy matrix. These epoxy nanocomposites are widely used as indoor flooring tiles in schools, boutiques, hospitals, offices, conference rooms, homes, trade fair stands and homes for the aged. Experiments involved sliding of the epoxy nanocomposite specimens against rotating steel disc at dry sliding condition. Experiments were carried out using a test rig of pin-on-disc, designed and manufactured for the test. The friction force was measured using load cell which connected with a digital screen to detect the friction force. All experiments were done at room temperature and carried out at constant normal load (7 N, constant speed (0.93 m/sec and constant running time (300 seconds. The worn surfaces were investigated with back scattered scanning electron microscopy (SEM. Based on the observations in the present work, it was found that addition of the tested filling nanoparticles have greatly affected the friction and highly improves wear resistance.

Bioactivity of gel-glass powders in the CaO-SiO2 system: a comparison with ternary (CaO-P2O5-SiO2) and quaternary glasses (SiO2-CaO-P2O5-Na2O).

Science.gov (United States)

Saravanapavan, Priya; Jones, Julian R; Pryce, Russell S; Hench, Larry L

2003-07-01

Bioactive glasses react chemically with body fluids in a manner that is compatible with the repair processes of the tissues. This results in the formation of an interfacial bond between the glasses and living tissue. Bioactive glasses also stimulate bone-cell proliferation. This behavior is dependent on the chemical composition as well as the surface texture of the glasses. It has been recently reported that gel-derived monolith specimens in the binary SiO2 - CaO are bioactive over a similar molar range of SiO2 content as the previously studied ternary CaO-P2O5-SiO2 system. In this report, the preparation and bioactivity of the binary gel-glass powder with 70 mol % SiO2 is discussed and its bioactivity is compared with the melt-derived 45S5 (quaternary) Bioglass and sol-gel-derived 58S (ternary) bioactive gel-glass compositions. Dissolution kinetic parameters K(1) and K(2) were also computed based on the silicon release for all glass powders. It was shown that the simple two-component SiO2-CaO gel-glass powder is bioactive with comparable dissolution rates as the clinically used melt-derived 45S5 Bioglass powder and extensively studied sol-gel-derived 58S gel-glass powder. Copyright 2003 Wiley Periodicals, Inc.

Structural colors of the SiO2/polyethyleneimine thin films on poly(ethylene terephthalate) substrates

International Nuclear Information System (INIS)

Jia, Yanrong; Zhang, Yun; Zhou, Qiubao; Fan, Qinguo; Shao, Jianzhong

2014-01-01

The SiO 2 /polyethyleneimine (PEI) films with structural colors on poly(ethylene terephthalate) (PET) substrates were fabricated by an electrostatic self-assembly method. The morphology of the films was characterized by Scanning Electron Microscopy. The results showed that there was no distinguishable multilayered structure found of SiO 2 /PEI films. The optical behaviors of the films were investigated through the color photos captured by a digital camera and the color measurement by a multi-angle spectrophotometer. Different hue and brightness were observed at various viewing angles. The structural colors were dependent on the SiO 2 particle size and the number of assembly cycles. The mechanism of the structural colors generated from the assembled films was elucidated. The morphological structures and the optical properties proved that the SiO 2 /PEI film fabricated on PET substrate formed a homogeneous inorganic/organic SiO 2 /PEI composite layer, and the structural colors were originated from single thin film interference. - Highlights: • SiO 2 /PEI thin films were electrostatic self-assembled on PET substrates. • The surface morphology and optical behavior of the film were investigated. • The structural colors varied with various SiO 2 particle sizes and assembly cycles. • Different hue and lightness of SiO 2 /PEI film were observed at various viewing angles. • Structural color of the SiO 2 /PEI film originated from single thin film interference

Microstructure and Mechanical Properties of Multiphase Strengthened Al/Si/Al_2O_3/SiO_2/MWCNTs Nano composites Sintered by In Situ Vacuum Hot Pressing

International Nuclear Information System (INIS)

Li, J.; Jiang, X.; Zhu, D.; Zhu, M.; Shao, Z.; Johnson, S.; Luo, Z.

2015-01-01

Eutectic Al/Si binary alloy is technically one of the most important Al casting alloys due to its high corrosion resistance, evident shrinkage reduction, low thermal expansion coefficient, high fluidity, and good weldability. In this work, multi phased Al/Si matrix nano composites reinforced with Al_2O_3 and multi walled carbon nano tubes (MWCNTs) have been sintered by an in situ vacuum hot-pressing method. The alumina Al_2O_3 nanoparticles were introduced by an in situ reaction of Al with SiO_2. Microstructure and mechanical properties of the sintered Al/Si/Al_2O_3/SiO_2/MWCNTs nano composites with different alumina contents were investigated. The mechanical properties were determined by micro-Vickers hardness and compressive and shear strength tests. The results demonstrated that in situ alumina and MWCNTs had impacts on microstructure and mechanical properties of the nano composites. Based on the mechanical properties and microstructure of the nano composites, strengthening and fracture mechanisms by multiple reinforcements were analyzed

PENGUJIAN AKTIVITAS KOMPOSIT Fe2O3-SiO2 SEBAGAI FOTOKATALIS PADA FOTODEGRADASI 4-KLOROFENOL (The Activity Test of Fe2O3-SiO2 Composite As Photocatalyst on 4-Chlorophenol Photodegradation

Directory of Open Access Journals (Sweden)

Eko Sri Kunarti

2009-03-01

Full Text Available ABSTRAK  Pada penelitian ini telah dilakukan pengujian aktivitas komposit Fe2O3-SiO2 sebagai fotokatalis pada fotodegradasi 4-klorofenol. Penelitian diawali dengan preparasi dan karakterisasi fotokatalis Fe2O3-SiO2. Preparasi dilakukan dengan metode sol-gel pada temperatur kamar menggunakan tetraetil ortosilikat (TEOS dan besi (III nitrat sebagai prekursor diikuti dengan perlakuan termal pada temperature 500 oC. Karakterisasi dilakukan dengan metode spektrometri inframerah, difraksi sinar-X dan spektrometri fluoresensi sinar-X. Uji aktivitas komposit untuk fotodegradasi 4-klorofenol dilakukan dalam reaktor tertutup yang dilengkapi dengan lampu UV. Pada uji ini telah dipelajari pengaruh waktu penyinaran dan pH larutan terhadap efektivitas fotodegradasi 4-klorofenol. Hasil penelitian menunjukkan bahwa komposit Fe2O3-SiO2 dapat dipreparasi dengan metode sol-gel pada temperatur kamar diikuti perlakuan termal. Komposit Fe2O3-SiO2 dapat meningkatkan efektivitas fotodegradasi 4-klorofenol dari 11,86 % menjadi 55,38 %. Efektivitas fotodegradasi 4- klorofenol dipengaruhi waktu penyinaran dan pH larutan yang semakin lama waktu penyinaran efektifitas fotodegradasi semakin tinggi, namun waktu penyinaran yang lebih lama dari 4 jam dapat menurunkan efektivitasnya. pH larutan memberikan pengaruh yang berbeda-beda pada efektivitas fotodegradasi 4-klorofenol.   ABSTRACT The activity test of Fe2O3-SiO2 composite as photocatalyst on 4-chlorophenol photodegradation has been studied. The research was initiated by preparation of Fe2O3-SiO2 photocatalyst and followed by characterization. The preparation was conducted by sol-gel method at room temperature using tetraethylorthosilicate (TEOS and iron (III nitrate as precursors followed by thermal treatment at a temperature of 500oC. The characterizations were performed by X-ray Diffraction (XRD, Infrared and X-ray Fluorescence Spectrophotometry. The photocatalytic activity test of composites for 4 chlorophenol

Analysis of SiO2 nanoparticles binding proteins in rat blood and brain homogenate

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